Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Bekele Fayisa, Gabisa; Lee, Jong Won; Kim, Jungsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2017-09-01

An effective approach to overcome inherently poor light extraction efficiency of AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is presented. We demonstrated the 5 × 5 array micro-ring DUV LED having an inclined sidewall at the outer perimeter and a p-GaN-removed inner circle of the micro-ring, together with MgF2/Al omnidirectional reflectors. The micro-ring array DUV LED shows remarkably higher light output power by 70% than the reference, consistent with the calculated result, as well as comparable turn-on and operational voltages, which are attributed to the effective extraction of strong transverse-magnetic polarized anisotropic emission and the reduction of the absorption loss by the p-GaN contact layer, simultaneously.

Inorganic volumetric light source excited by ultraviolet light

DOEpatents

Reed, Scott; Walko, Robert J.; Ashley, Carol S.; Brinker, C. Jeffrey

1994-01-01

The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light.

Inorganic volumetric light source excited by ultraviolet light

DOEpatents

Reed, S.; Walko, R.J.; Ashley, C.S.; Brinker, C.J.

1994-04-26

The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light. 4 figures.

Simultaneous multi-wavelength ultraviolet excited single-phase white light emitting phosphor Ba1-x(Zr,Ti)Si3O9:xEu

NASA Astrophysics Data System (ADS)

Zhou, Zhenzhen; Liu, Guanghui; Ni, Jia; Liu, Wanlu; Liu, Qian

2018-05-01

A kind of novel compound Ba1-x(Zr,Ti)Si3O9:xEu simultaneously activated by different-valence Eu2+ and Eu3+ ions has been successfully synthesized. The existence of Ti4+-O2- charge transfer (CT) transitions in Ba1-xZrSi3O9:xEu is proved by the photoluminescence spectra and first principle calculations, and the Ti4+ ions come from the impurities in commercial ZrO2 raw materials. Under the excitation of multi-wavelength ultraviolet radiation (λEX = 392, 260, 180 nm), Ba1-xZrSi3O9:xEu (x = 0.15) can directly emit nearly white light. The coexistence of multiple luminescent centers and the energy transfer among Zr4+-O2- CT state, Ti4+-O2- CT state, Eu2+ and Eu3+ ions play important roles in the white light emission. Ba1-xZrSi3O9:xEu (x = 0.15) has good thermal stability, in particular, the intensity of emission spectrum (λEX = 392 nm) at 150 °C is ∼96% of that at room temperature. In general, the multi-wavelength ultraviolet-excited single-phase white light emitting phosphor Ba1-x(Zr,Ti)Si3O9:xEu possesses a promise for applications in white light emitting diodes (WLEDs), agriculture, medicine and other photonic fields.

Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes

PubMed Central

Lee, Keon Hwa; Moon, Yong-Tae; Song, June-O; Kwak, Joon Seop

2015-01-01

This study examined systematically the mechanism of light interaction in the sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the triple-layer ODR structure increased with decreasing surface roughness of the sapphire backside in the ODR. Theoretical modeling of the roughened surface suggests that the dependence of the reflectance of the triple-layer ODR structure on the surface roughness can be attributed mainly to light absorption by the Al nano-structures and the trapping of scattered light in the MgF2 layer. Furthermore, the ray tracing simulation based upon the theoretical modeling showed good agreement with the measured reflectance of the ODR structure in diffuse mode. PMID:26010378

Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes.

PubMed

Lee, Keon Hwa; Moon, Yong-Tae; Song, June-O; Kwak, Joon Seop

2015-05-26

This study examined systematically the mechanism of light interaction in the sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the triple-layer ODR structure increased with decreasing surface roughness of the sapphire backside in the ODR. Theoretical modeling of the roughened surface suggests that the dependence of the reflectance of the triple-layer ODR structure on the surface roughness can be attributed mainly to light absorption by the Al nano-structures and the trapping of scattered light in the MgF2 layer. Furthermore, the ray tracing simulation based upon the theoretical modeling showed good agreement with the measured reflectance of the ODR structure in diffuse mode.

Radiation-damage-induced phasing: a case study using UV irradiation with light-emitting diodes.

PubMed

de Sanctis, Daniele; Zubieta, Chloe; Felisaz, Franck; Caserotto, Hugo; Nanao, Max H

2016-03-01

Exposure to X-rays, high-intensity visible light or ultraviolet radiation results in alterations to protein structure such as the breakage of disulfide bonds, the loss of electron density at electron-rich centres and the movement of side chains. These specific changes can be exploited in order to obtain phase information. Here, a case study using insulin to illustrate each step of the radiation-damage-induced phasing (RIP) method is presented. Unlike a traditional X-ray-induced damage step, specific damage is introduced via ultraviolet light-emitting diodes (UV-LEDs). In contrast to UV lasers, UV-LEDs have the advantages of small size, low cost and relative ease of use.

Comparative Photoluminescence Properties and Judd-Ofelt Analysis of Eu3+ Ion-Activated Metal Molybdate Phosphors A2MoO6:Eu3+ (A = La, Y, Gd and Bi)

NASA Astrophysics Data System (ADS)

Han, Bing; Liu, Bingkun; Zhang, Jie; Li, Pengju; Shi, Hengzhen

2017-07-01

A class of red-emitting Eu3+ ion-activated metal molybdate A2MoO6:Eu3+ (A = La, Y, Gd and Bi) phosphors were synthesized by a conventional high-temperature solid-state reaction method. The x-ray diffraction patterns, scanning electron microscope images, Fourier transform infrared spectra, ultraviolet-visible diffuse reflection spectra as well as photoluminescence properties were measured to characterize the as-prepared samples. The photoluminescence properties including excitation/emission spectra, decay curves, Commission Internationale de L'Eclairage chromaticity coordinates and quantum efficiency were comparatively investigated in detail. The Judd-Ofelt theory was also applied to understand the radiative properties of f-f transitions of Eu3+ ions in this system for the first time. The as-prepared phosphors can be effectively excited with near-ultraviolet and/or blue light, and exhibit red emission belonging to the prevailing 5D0 → 7F2 transitions of Eu3+ with short decay time (millisecond level). The results demonstrated that A2MoO6:Eu3+ (A = La, Y, Gd and Bi) phosphors could have potential application as red-emitting phosphors in white light-emitting diodes based on near-ultraviolet and/or blue light-emitting diode chips.

Ultraviolet radiation emitted by lamps, TVs, tablets and computers: are there risks for the population?

PubMed

Duarte, Ida Alzira Gomes; Hafner, Mariana de Figueiredo Silva; Malvestiti, Andrey Augusto

2015-01-01

The frequent human exposure to various types of indoor lamps, as well as other light sources (television monitors, tablets and computers), raises a question: are there risks for the population? In the present study the emission of UVA and UVB radiation by lamps and screens of electronic devices were measured in order to determine the safe distance between the emitting source and the individual. We concluded that the lamps and electronic devices do not emit ultraviolet radiation; so they pose no health risk for the population.

Ultraviolet radiation emitted by lamps, TVs, tablets and computers: are there risks for the population?

PubMed Central

Duarte, Ida Alzira Gomes; Hafner, Mariana de Figueiredo Silva; Malvestiti, Andrey Augusto

2015-01-01

The frequent human exposure to various types of indoor lamps, as well as other light sources (television monitors, tablets and computers), raises a question: are there risks for the population? In the present study the emission of UVA and UVB radiation by lamps and screens of electronic devices were measured in order to determine the safe distance between the emitting source and the individual. We concluded that the lamps and electronic devices do not emit ultraviolet radiation; so they pose no health risk for the population. PMID:26375236

Method for detecting radiation dose utilizing thermoluminescent material

DOEpatents

Miller, Steven D.; McDonald, Joseph C.; Eichner, Fred N.; Tomeraasen, Paul L.

1991-01-01

The amount of ionizing radiation to which a thermoluminescent material has been exposed is determined by first cooling the thermoluminescent material to a cryogenic temperature. The thermoluminescent material is then optically stimulated by exposure to ultraviolet light. Visible light emitted by the thermoluminescent material as it is allowed to warm up to room temperature is detected and counted. The thermoluminescent material may be annealed by exposure to ultraviolet light.

Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han; Towe, Elias

2017-12-01

Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

High-brightness and high-color purity red-emitting Ca3Lu(AlO)3(BO3)4:Eu3+ phosphors with internal quantum efficiency close to unity for near-ultraviolet-based white-light-emitting diodes.

PubMed

Huang, Xiaoyong; Wang, Shaoying; Li, Bin; Sun, Qi; Guo, Heng

2018-03-15

In this work, we reported on high-brightness Eu 3+ -activated Ca 3 Lu(AlO) 3 (BO 3 ) 4 (CLAB) red-emitting phosphors. Under 397 nm excitation, the CLAB:Eu 3+ phosphors showed intense red emissions at around 621 nm with CIE coordinates of (0.657, 0.343). The optimal doping concentration of Eu 3+ ions was found to be 30 mol. %, and the CLAB:0.3Eu 3+ sample possessed high-color purity of 93% and ultra-high internal quantum efficiency as great as 98.5%. Importantly, the CLAB:0.3Eu 3+ also had good thermal stability. Finally, a white-light-emitting diode (WLED) lamp with good color-rendering index was fabricated by using a 365 nm ultraviolet chip and the phosphor blends of CLAB:0.3Eu 3+ red-emitting phosphors, (Ba,Sr) 2 SiO 4 :Eu 2+ green-emitting phosphors, and BaMgAl 10 O 7 :Eu 2+ blue-emitting phosphors.

Recording of individual identification information on dental prostheses using fluorescent material and ultraviolet light.

PubMed

Naito, Yoshihito; Meinar, Ashrin N; Iwawaki, Yuki; Kashiwabara, Toshiya; Goto, Takaharu; Ito, Teruaki; Sakuma, Tetsuro; Ichikawa, Tetsuo

2013-01-01

The placement of individual identification on a prosthesis is very important for forensic dentistry and traceability. This article describes the unique naming/labeling of dentures with information for individual identification using a method in which information is invisible under natural light but visible under ultraviolet light-emitting diode/black light exposure. The use of laser beam machining with this method will enable the recording of a large amount of information.

High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

NASA Astrophysics Data System (ADS)

Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

2017-07-01

High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin

2013-06-01

We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.

Continuous-wave ultraviolet generation at 320 nm by intracavity frequency doubling of red-emitting Praseodymium lasers

NASA Astrophysics Data System (ADS)

Richter, A.; Pavel, N.; Heumann, E.; Huber, G.; Parisi, D.; Toncelli, A.; Tonelli, M.; Diening, A.; Seelert, W.

2006-04-01

We describe a new approach for the generation of coherent ultraviolet radiation. Continuous-wave ultraviolet light at 320 nm has been obtained by intracavity frequency doubling of red-emitting Praseodymium lasers. Lasing at the 640-nm fundamental wavelength in Pr:LiYF4 and Pr:BaY2F8 was realized by employing an optically pumped semiconductor laser at 480 nm as pump source.Using LiB3O5 as nonlinear medium, ~19 mW of ultraviolet radiation with ~9% optical efficiency with respect to absorbed power was reached for both laser crystals; the visible-to-ultraviolet conversion efficiency was 26% and 35% for Pr:LiYF4 and Pr:BaY2F8, respectively.

Bridgman growth and luminescence properties of dysprosium doped lead potassium niobate crystal

NASA Astrophysics Data System (ADS)

Liu, Wenbin; Tian, Tian; Yang, Bobo; Xu, Jiayue; Liu, Hongde

2017-06-01

Dy-doped lead potassium niobate (Pb2KNb5O15, PKN) single crystal was grown by the modified vertical Bridgman method through spontaneous nucleation. The crystal was brownish, transparent and inclusion free. Five excitation peaks of Dy3+ ions were clearly seen from near ultraviolet region to blue range. It was unique that the excitation peaks in blue range were more intense, especially the one centered at 455 nm. The emission bands consisted of blue, yellow and red emissions, which were at about 487 nm, 573 nm and 662 nm respectively. The CIE chromaticity diagram of PKN:Dy indicated that white light and yellow light could be emitted when the crystal was excited under near ultraviolet light and blue light, respectively. Thus PKN:Dy crystal is a candidate material whose emitting light could be tunable through changing the excited light wavelength.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

PubMed

Du, Chia-Fong; Lee, Chen-Hui; Cheng, Chao-Tsung; Lin, Kai-Hsiang; Sheu, Jin-Kong; Hsu, Hsu-Cheng

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

NASA Astrophysics Data System (ADS)

Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

2018-06-01

Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

Sun and Sjogren's Syndrome

MedlinePlus

... California, for authoring this Patient Education Sheet. Ultraviolet (UV) radiation emitted from the sun and other light ... autoantibody SSA/or Ro. To avoid reactions to UV light, try the following tips: Protect your skin ...

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Sun Emits a Mid-Level Flare on Dec. 4, 2014

NASA Image and Video Library

2017-12-08

The sun emitted a solar flare on Dec. 4, 2014, seen as the flash of light in this image from NASA's Solar Dynamics Observatory. The image blends two wavelengths of extreme ultraviolet light – 131 and 171 Angstroms – which are typically colored in teal and gold, respectively. Read more: 1.usa.gov/121n7PP Image Credit: NASA/SDO

234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2018-01-01

Deep ultraviolet (DUV) AlN-delta-GaN quantum well (QW) light-emitting diodes (LEDs) with emission wavelengths of 234 nm and 246 nm are proposed and demonstrated in this work. Our results reveal that the use of AlN-delta-GaN QW with ˜1-3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarized emission, contrary to what is observed in conventional AlGaN QW in the 230-250 nm wavelength regime. The switching of light polarization in the proposed AlN-delta-GaN QW active region is attributed to the rearrangement of the valence subbands near the Γ-point. The light radiation patterns obtained from angle-dependent electroluminescence measurements for the Molecular Beam Epitaxy (MBE)-grown 234 nm and 246 nm AlN-delta-GaN QW LEDs show that the photons are mainly emitted towards the surface rather than the edge, consistent with the simulated patterns achieved by the finite-difference time-domain modeling. The results demonstrate that the proposed AlN-delta-GaN QWs would potentially lead to high-efficiency TE-polarized surface-emitting DUV LEDs.

The electronics in fluorescent bulbs and light emitting diodes (LED), rather than ultraviolet radiation, cause increased malignant melanoma incidence in indoor office workers and tanning bed users.

PubMed

Milham, Samuel; Stetzer, Dave

2018-07-01

The epidemiology of cutaneous malignant melanoma (CMM) has a number of facets that do not fit with sunlight and ultraviolet light as the primary etiologic agents. Indoor workers have higher incidence and mortality rates of CMM than outdoor workers; CMM occurs in body locations never exposed to sunlight; CMM incidence is increasing in spite of use of UV blocking agents and small changes in solar radiation. Installation of two new fluorescent lights in the milking parlor holding area of a Minnesota dairy farm in 2015 caused an immediate drop in milk production. This lead to measurement of body amperage in humans exposed to modern non-incandescent lighting. People exposed to old and new fluorescent lights, light emitting diodes (LED) and compact fluorescent lights (CFL) had body amperage levels above those considered carcinogenic. We hypothesize that modern electric lighting is a significant health hazard, a carcinogen, and is causing increasing CMM incidence in indoor office workers and tanning bed users. These lights generate dirty electricity (high frequency voltage transients), radio frequency (RF) radiation, and increase body amperage, all of which have been shown to be carcinogenic. This could explain the failure of ultraviolet blockers to stem the malignant melanoma pandemic. Tanning beds and non-incandescent lighting could be made safe by incorporating a grounded Faraday cage which allows passage of ultraviolet and visible light frequencies and blocks other frequencies. Modern electric lighting should be fabricated to be electrically clean. Copyright © 2018 Elsevier Ltd. All rights reserved.

Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm

NASA Astrophysics Data System (ADS)

Jia, Chuanyu; Yu, Tongjun; Mu, Sen; Pan, Yaobo; Yang, Zhijian; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi

2007-05-01

Polarization-resolved edge-emitting electroluminescence of InGaN /GaN multiple quantum well (MQW) light emitting diodes (LEDs) from 395to455nm was measured. Polarization ratio decreased from 3.2 of near-ultraviolet LEDs (395nm) to 1.9 of blue LEDs (455nm). Based on TE mode dominant emissions in InGaN /GaN MQWs, compressive strain in well region favors TE mode, indium induced quantum-dot-like behavior leads to an increased TM component. As wavelength increased, indium enhanced quantum-dot-like behavior became obvious and E ‖C electroluminescence signal increased thus lower polarization ratio. Electroluminescence spectrum shifts confirmed that quantum dotlike behaviors rather than strain might be dominant in modifying luminescence mode of InGaN /GaN MQWs from near ultraviolet to blue.

Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

2018-06-01

Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

PubMed Central

2014-01-01

We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO. PMID:25232299

Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Al tahtamouni, T. M., E-mail: talal@yu.edu.jo; Lin, J. Y.; Jiang, H. X.

2014-04-15

Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

Flexible, liquid core light guide with focusing and light shaping attachments

DOEpatents

Wojcik, Randolph Frank; Majewski, Stanislaw; Zorn, Carl John; Kross, Brian

1999-01-01

A liquid light guide system for ultraviolet light is disclosed that has a light shaping arrangement for the emitted light, a stable liquid core and sheath and reliable and effective end closures. The end closures include a metal crimping arrangement that utilizes two layers of deformable materials to prevent cracking of endplugs.

AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

NASA Astrophysics Data System (ADS)

Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin

2014-06-01

We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.

Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

PubMed

Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

2017-07-24

Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

NASA Astrophysics Data System (ADS)

Wang, Dong-Sheng; Zhang, Ke-Xiong; Liang, Hong-Wei; Song, Shi-Wei; Yang, De-Chao; Shen, Ren-Sheng; Liu, Yang; Xia, Xiao-Chuan; Luo, Ying-Min; Du, Guo-Tong

2014-02-01

Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.

Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim

2018-03-01

Defect repair of GaN-based light-emitting diodes (LEDs) by ultraviolet laser micromachining is reported. Percussion and helical drilling in GaN by laser ablation were investigated using 248 nm nanosecond and 355 nm picosecond pulses. The influence of laser ablation including different laser parameters on electrical and optical properties of GaN-based LED chips was evaluated. The results for LEDs on sapphire with transparent conductive oxide p-type contact on top as well as for thin-film LEDs are reported. A reduction of leakage current by up to six orders in magnitude and homogeneous luminance distribution after proper laser defect treatment were achieved.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

PubMed

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-24

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

NASA Astrophysics Data System (ADS)

Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

2018-04-01

This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

Flexible, liquid core light guide with focusing and light shaping attachments

DOEpatents

Wojcik, R.F.; Majewski, S.; Zorn, C.J.; Kross, B.

1999-04-20

A liquid light guide system for ultraviolet light is disclosed that has a light shaping arrangement for the emitted light, a stable liquid core and sheath and reliable and effective end closures. The end closures include a metal crimping arrangement that utilizes two layers of deformable materials to prevent cracking of endplugs. 19 figs.

Methods and apparatus for transparent display using up-converting nanoparticles

DOEpatents

Hsu, Chia Wei; Qiu, Wenjun; Zhen, Bo; Shapira, Ofer; Soljacic, Marin

2016-10-04

Disclosed herein are transparent color displays with nanoparticles made with nonlinear materials and/or designed to exhibit optical resonances. These nanoparticles are embedded in or hosted on a transparent substrate, such as a flexible piece of clear plastic or acrylic. Illuminating the nanoparticles with invisible light (e.g., infrared or ultraviolet light) causes them to emit visible light. For example, a rare-earth doped nanoparticle may emit visible light when illuminated simultaneoulsy with a first infrared beam at a first wavelength .lamda..sub.1 and a second infrared beam at a second wavelength .lamda..sub.2. And a frequency-doubling nanoparticle may emit visible light when illuminated with a single infrared beam at the nanoparticle's resonant frequency. Selectively addressing these nanoparticles with appropiately selected pump beams yields visible light emitted from the nanoparticles hosted by the transparent substrate in a desired pattern.

Pink light emitting long-lasting phosphorescence in Sm 3+-doped CdSiO 3

NASA Astrophysics Data System (ADS)

Lei, Bingfu; Liu, Yingliang; Liu, Jie; Ye, Zeren; Shi, Chunshan

2004-04-01

Novel pink light emitting long-lasting afterglow CdSiO 3:Sm 3+ phosphors are prepared by the conventional high-temperature solid-state method and their luminescent properties are investigated. XRD and photoluminescence (PL) spectra are used to characterize the synthesized phosphors. The phosphors are well crystallized by calcinations at 1050°C for 5 h. These phosphors emit pink light and show long-lasting phosphorescence after they are excited with 254 nm ultraviolet light. The phosphorescence lasts for nearly 5 h in the light perception of the dark-adapted human eye (0.32 mcd/m 2). The phosphorescence mechanism is also investigated. All the results indicate that these phosphors have promising potential practical applications.

Mn2- x Y x (MoO4)3 Phosphor Excited by UV GaN-Based Light-Emitting Diode for White Emission

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Tseng, Zong-Liang; Hsu, Ting-Chun; Yang, Shengyi; Chen, Yuan-Bin

2017-04-01

One option for low-cost white light-emitting diodes (LEDs) is the combination of a near-ultraviolet (UV) LED chip (382 nm) and a single phosphor. Such Mn2- x Y x (MoO4)3 single phosphors have been fabricated by a simple solid-state reaction route and their emission color tuned by controlling the Mn doping amount. The chromaticity coordinates of the white light emitted by the UV GaN LED with the MnY(MoO4)3 phosphor were x = 0.5204 and y = 0.4050 [correlated color temperature (CCT) = 7958 K].

Evaluating UV-C LED disinfection performance and investigating potential dual-wavelength synergy

EPA Science Inventory

This study evaluated ultraviolet (UV) light emitting diodes (LEDs) emitting at 260 nm, 280 nm, and the combination of 260|280 nm together for their efficacy at inactivating Escherichia. coli, MS2 coliphage, human adenovirus type 2 (HAdV2), and Bacillus pumilus spores; research in...

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

PubMed Central

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-01-01

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results. PMID:28374856

Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.

PubMed

Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

2017-04-04

In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

PubMed

Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

2017-10-24

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

PubMed Central

Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

2017-01-01

The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2018-01-01

We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

Photochemical method for generating superoxide radicals (O.sub.2.sup.-) in aqueous solutions

DOEpatents

Holroyd, Richard A.; Bielski, Benon H. J.

1980-01-01

A photochemical method and apparatus for generating superoxide radicals (ub.2.sup.-) in an aqueous solution by means of a vacuum-ultraviolet lamp of simple design. The lamp is a microwave powered rare gas device that emits far-ultraviolet light. The lamp includes an inner loop of high purity quartz tubing through which flows an oxygen-saturated sodium formate solution. The inner loop is designed so that the solution is subjected to an intense flux of far-ultraviolet light. This causes the solution to photodecompose and form the product radical (O.sub.2.sup.-).

Transparent ultraviolet photovoltaic cells.

PubMed

Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

2016-02-15

Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

Synthesis and characterization of pure and Li⁺ activated Alq₃ complexes for green and blue organic light emitting diodes and display devices.

PubMed

Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

2014-08-01

Pure and Li(+)-doped Alq3 complexes were synthesized by simple precipitation method at room temperature, maintaining the stoichiometric ratio. These complexes were characterized by X-ray diffraction, ultraviolet-visible absorption and Fourier transform infrared and photoluminescence (PL) spectra. X-ray diffraction analysis reveals the crystalline nature of the synthesized complexes, while Fourier transform infrared spectroscopy confirm the molecular structure, the completion of quinoline ring formation and presence of quinoline structure in the metal complex. Ultraviolet-visible and PL spectra revealed that Li(+) activated Alq3 complexes exhibit the highest intensity in comparison to pure Alq3 phosphor. Thus, Li(+) enhances PL emission intensity when doped into Alq3 phosphor. The excitation spectra lie in the range of 383-456 nm. All the synthesized complexes other than Liq give green emission, while Liq gives blue emission with enhanced intensity. Thus, he synthesized phosphors are the best suitable candidates for green- and blue-emitting organic light emitting diode, PL liquid-crystal display and solid-state lighting applications. Copyright © 2013 John Wiley & Sons, Ltd.

Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

NASA Astrophysics Data System (ADS)

Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

2017-06-01

In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

UV emissions from low energy artificial light sources.

PubMed

Fenton, Leona; Moseley, Harry

2014-01-01

Energy efficient light sources have been introduced across Europe and many other countries world wide. The most common of these is the Compact Fluorescent Lamp (CFL), which has been shown to emit ultraviolet (UV) radiation. Light Emitting Diodes (LEDs) are an alternative technology that has minimal UV emissions. This brief review summarises the different energy efficient light sources available on the market and compares the UV levels and the subsequent effects on the skin of normal individuals and those who suffer from photodermatoses. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

Ultraviolet Light Emitting Diode Use in Advanced Oxidation Processes

DTIC Science & Technology

2014-03-27

or medium pressure mercury lamps , but UV light emitting diodes ( LEDs ) have the capacity to be used for water disinfection also. Traditional mercury...based upon the phosphors that are selected and used to coat the inside of the glass tube from which these lamps are produced. A UV LED is...Research has demonstrated the ability to use UV LEDs in place of mercury lamps to achieve the same 7 disinfection capacity, and limited research has

Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect.

PubMed

Wang, Xingfu; Peng, Wenbo; Yu, Ruomeng; Zou, Haiyang; Dai, Yejing; Zi, Yunlong; Wu, Changsheng; Li, Shuti; Wang, Zhong Lin

2017-06-14

Achievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm -2 . Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.

Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

NASA Astrophysics Data System (ADS)

Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka

2013-04-01

We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.

Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2016-06-01

The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.

A fiber optic, ultraviolet light-emitting diode-based, two wavelength fluorometer for monitoring reactive adsorption

DOE Office of Scientific and Technical Information (OSTI.GOV)

Granz, Christopher D.; Whitten, James E., E-mail: James-Whitten@uml.edu; Schindler, Bryan J.

Construction and use of an ultraviolet light-emitting diode-based fluorometer for measuring photoluminescence (PL) from powder samples with a fiber optic probe is described. Fluorescence at two wavelengths is detected by miniature photomultiplier tubes, each equipped with a different band pass filter, whose outputs are analyzed by a microprocessor. Photoluminescent metal oxides and hydroxides, and other semiconducting nanoparticles, often undergo changes in their emission spectra upon exposure to reactive gases, and the ratio of the PL intensities at two wavelengths is diagnostic of adsorption. Use of this instrument for reactive gas sensing and gas filtration applications is illustrated by measuring changesmore » in the PL ratio for zirconium hydroxide and zinc oxide particles upon exposure to air containing low concentrations of sulfur dioxide.« less

Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

2015-10-01

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

2006-11-01

In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

Comparative and quantitative analysis of white light-emitting diodes and other lamps used for home illumination

NASA Astrophysics Data System (ADS)

Rubinger, Rero Marques; da Silva, Edna Raimunda; Pinto, Daniel Zaroni; Rubinger, Carla Patrícia Lacerda; Oliveira, Adhimar Flávio; da Costa Bortoni, Edson

2015-01-01

We compared the photometric and radiometric quantities in the visible, ultraviolet, and infrared spectra of white light-emitting diodes (LEDs), incandescent light bulbs and a compact fluorescent lamp used for home illumination. The color-rendering index and efficiency-related quantities were also used as auxiliary tools in this comparison. LEDs have a better performance in all aspects except for the color-rendering index, which is better with an incandescent light bulb. Compact fluorescent lamps presented results that, to our knowledge, do not justify their substitution for the incandescent light bulb. The main contribution of this work is an approach based on fundamental quantities to evaluate LEDs and other light sources.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.

PubMed

Ryu, Han-Youl

2014-02-04

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS: 41.20.Jb; 42.72.Bj; 85.60.Jb.

Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

PubMed Central

2014-01-01

Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS 41.20.Jb; 42.72.Bj; 85.60.Jb PMID:24495598

The difficulty of ultraviolet emssion from supernovae

NASA Technical Reports Server (NTRS)

Colgate, S. A.

1971-01-01

There are certain conceptual difficulties in the theory of the generation of ultraviolet radiation which is presumed for the creation of the optical fluorescence mechanism of supernova light emission and ionization of a nebula as large as the Gum nebula. Requirements concerning the energy distribution of the ultraviolet photons are: 1) The energy of the greater part of the photons must be sufficient to cause both helium fluorescence and hydrogen ionization. 2) If the photons are emitted in an approximate black body spectrum, the fraction of energy emitted in the optical must be no more than what is already observed. Ultraviolet black body emission depends primarily on the energy source. The probability that the wide mixture of elements present in the interstellar medium and supernova ejecta results in an emission localized in a limited region with less than 0.001 emission in the visible, for either ionization or fluorescence ultraviolet, is remote. Therefore transparent emission must be excluded as unlikely, and black body or at least quasi-black-body emission is more probable.

Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

2018-02-01

We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

Development of a new water sterilization device with a 365 nm UV-LED.

PubMed

Mori, Mirei; Hamamoto, Akiko; Takahashi, Akira; Nakano, Masayuki; Wakikawa, Noriko; Tachibana, Satoko; Ikehara, Toshitaka; Nakaya, Yutaka; Akutagawa, Masatake; Kinouchi, Yohsuke

2007-12-01

Ultraviolet (UV) irradiation is an effective disinfection method. In sterilization equipment, a low-pressure mercury lamp emitting an effective germicidal UVC (254 nm) is used as the light source. However, the lamp, which contains mercury, must be disposed of at the end of its lifetime or following damage due to physical shock or vibration. We investigated the suitability of an ultraviolet light-emitting diode at an output wavelength of 365 nm (UVA-LED) as a sterilization device, comparing with the other wavelength irradiation such as 254 nm (a low-pressure mercury lam) and 405 nm (LED). We used a commercially available UVA-LED that emitted light at the shortest wavelength and at the highest output energy. The new sterilization system using the UVA-LED was able to inactivate bacteria, such as Escherichia coli DH5 alpha, Enteropathogenic E. coli, Vibrio parahaemolyticus, Staphylococcus aureus, and Salmonella enterica serovar Enteritidis. The inactivations of the bacteria were dependent on the accumulation of UVA irradiation. Taking advantage of the safety and compact size of LED devices, we expect that the UVA-LED sterilization device can be developed as a new type of water sterilization device.

Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

PubMed Central

Zhao, S.; Connie, A. T.; Dastjerdi, M. H. T.; Kong, X. H.; Wang, Q.; Djavid, M.; Sadaf, S.; Liu, X. D.; Shih, I.; Guo, H.; Mi, Z.

2015-01-01

Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated. PMID:25684335

Wood's lamp illumination (image)

MedlinePlus

A Wood's lamp emits ultraviolet light and can be a diagnostic aid in determining if someone has a fungal ... is an infection on the area where the Wood's lamp is illuminating, the area will fluoresce. Normally ...

Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer

NASA Astrophysics Data System (ADS)

Liu, W. Z.; Xu, H. Y.; Zhang, L. X.; Zhang, C.; Ma, J. G.; Wang, J. N.; Liu, Y. C.

2012-10-01

Localized surface plasmon (LSP)-enhanced ultraviolet light-emitting diodes were manufactured by introducing Ag nanoparticles and MgO spacer layer into n-ZnO/i-ZnO/p-GaN heterostructures. By optimizing the MgO thickness, which can suppress the undesired charge transfer and nonradiative Förster resonant energy transfer between Ag and ZnO, a 7-fold electroluminescence enhancement was achieved. Time-resolved and temperature-dependent photoluminescence measurements reveal that both spontaneous emission rate and internal quantum efficiency are increased as a result of coupling between ZnO excitons and Ag LSPs, and simple calculations, based on experimental data, also indicate that most of LSP's energy can be converted into the photon energy.

Tunnel junction enhanced nanowire ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

NASA Astrophysics Data System (ADS)

Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

2018-03-01

We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

Phosphor-free, white-light LED under alternating-current operation.

PubMed

Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

2014-11-15

A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

Lamp method and apparatus using multiple reflections

DOEpatents

MacLennan, Donald A.; Turner, Brian; Kipling, Kent

1999-01-01

A method wherein the light in a sulfur or selenium lamp is reflected through the fill a multiplicity of times to convert ultraviolet radiation to visible. A light emitting device comprised of an electrodeless envelope which bears a light reflecting covering around a first portion which does not crack due to differential thermal expansion and which has a second portion which comprises a light transmissive aperture.

Light Converting Inorganic Phosphors for White Light-Emitting Diodes

PubMed Central

Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

2010-01-01

White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Qi; Zhang, Hao; Zhang, Xiao-Wen; Xu, Tao; Wei, Bin

2015-02-01

We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. Project supported by the National Natural Science Foundation of China (Grant Nos. 61136003 and 61275041) and the Guangxi Provincial Natural Science Foundation, China (Grant No. 2012GXNSFBA053168).

Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

NASA Astrophysics Data System (ADS)

Chen, Zimin; Zhuo, Yi; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Chengxin; Wang, Gang

2017-06-01

Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO.

Bluish-green color emitting Ba2Si3O8:Eu2+ ceramic phosphors for white light-emitting diodes.

PubMed

Xiao, F; Xue, Y N; Zhang, Q Y

2009-10-15

This paper reports on the structural and optical properties of Eu(2+) activated Ba(2)Si(3)O(8) ceramic phosphors synthesized by a sol-gel method. The ceramic phosphors have been characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and fluorescence measurements. The structural characterization results suggest that the as-prepared phosphors are of single phase monoclinic Ba(2)Si(3)O(8) with rod-like morphology. A broad excitation band ranging from 300 to 410 nm matches well with the ultraviolet (UV) radiation of light-emitting diodes (LEDs). Upon 380 nm UV light excitation, these phosphors emit bluish-green emission centered at 500 nm with color coordination (x=0.25, y=0.40). All the obtained results indicate that the Ba(2)Si(3)O(8):Eu(2+) ceramic phosphors are promising bluish-green candidates for the phosphor-converted white LEDs.

The synthesis and the luminescence properties of Sr2Ga3La1-xDyxGe3O14

NASA Astrophysics Data System (ADS)

Wang, Qiang; Mu, Zhongfei; Yang, Lurong; Zhang, Shaoan; Zhu, Daoyun; Yang, Yibin; Luo, Dongxiang; Wu, Fugen

2018-02-01

A series of Sr2Ga3La1-xDyxGe3O14 (x = 0, 0.015, 0.03, 0.045, 0.06, 0.075, 0.09) phosphors were synthesized by high temperature solid state reactions. X-ray diffraction analysis proves that single-phase Sr2Ga3La1-xDyxGe3O14 (0 ≤ x ≤ 0.09) has been obtained. The particle size of these powders is in the range from 1 to 3 μm. The host Sr2Ga3LaGe3O14 emits blue white light under the excitation of 260 nm ultraviolet light. Dy3+ doped samples can be effectively excited with near ultraviolet light and exhibit two emission bands in the blue (4F9/2 → 6H15/2) and yellow regions (4F9/2 → 6H13/2), which can form white light. Present research indicates that Dy3+ doped Sr2Ga3LaGe3O14 have the potential to be a single-phase full-color emitting phosphor.

Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

NASA Astrophysics Data System (ADS)

Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

2018-04-01

Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

PubMed Central

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-01-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

NASA Astrophysics Data System (ADS)

Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

2016-03-01

While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

Lamp method and apparatus using multiple reflections

DOEpatents

MacLennan, D.A.; Turner, B.; Kipling, K.

1999-05-11

A method wherein the light in a sulfur or selenium lamp is reflected through the fill a multiplicity of times to convert ultraviolet radiation to visible is disclosed. A light emitting device comprised of an electrodeless envelope which bears a light reflecting covering around a first portion which does not crack due to differential thermal expansion and which has a second portion which comprises a light transmissive aperture. 20 figs.

Comparison of ultraviolet light-emitting diodes and low-pressure mercury-arc lamps for disinfection of water.

PubMed

Sholtes, Kari A; Lowe, Kincaid; Walters, Glenn W; Sobsey, Mark D; Linden, Karl G; Casanova, Lisa M

2016-09-01

Ultraviolet (UV) light-emitting diodes (LEDs) emitting at 260 nm were evaluated to determine the inactivation kinetics of bacteria, viruses, and spores compared to low-pressure (LP) UV irradiation. Test microbes were Escherichia coli B, a non-enveloped virus (MS-2), and a bacterial spore (Bacillus atrophaeus). For LP UV, 4-log10 reduction doses were: E. coli B, 6.5 mJ/cm(2); MS-2, 59.3 mJ/cm(2); and B. atrophaeus, 30.0 mJ/cm(2). For UV LEDs, the 4-log10 reduction doses were E. coli B, 6.2 mJ/cm(2); MS-2, 58 mJ/cm(2); and B. atrophaeus, 18.7 mJ/cm(2). Microbial inactivation kinetics of the two UV technologies were not significantly different for E. coli B and MS-2, but were different for B. atrophaeus spores. UV LEDs at 260 nm are at least as effective for inactivating microbes in water as conventional LP UV sources and should undergo further development in treatment systems to disinfect drinking water.

Advanced Oxidation of Tartrazine and Brilliant Blue with Pulsed Ultraviolet Light Emitting Diodes

PubMed Central

Scott, Robert; Mudimbi, Patrick; Miller, Michael E.; Magnuson, Matthew; Willison, Stuart; Phillips, Rebecca; Harper, Willie F.

2018-01-01

This study investigated the effect of ultraviolet light-emitting diodes (UVLEDs) coupled with hydrogen peroxide as an advanced oxidation process (AOP) for the degradation of two test chemicals. Brilliant Blue FCF consistently exhibited greater degradation than tartrazine, with 83% degradation after 300 minutes at the 100% duty cycle compared with only 17% degradation of tartrazine under the same conditions. These differences are attributable to the structural properties of the compounds. Duty cycle was positively correlated with the first-order rate constants (k) for both chemicals but, interestingly, negatively correlated with the normalized first-order rate constants (k/duty cycle). Synergistic effects of both hydraulic mixing and LED duty cycle were manifested as novel oscillations in the effluent contaminant concentration. Further, LED output and efficiency were dependent upon duty cycle and less efficient over time perhaps due to heating effects on semiconductor performance. PMID:28236826

Extreme Ultraviolet Fractional Orbital Angular Momentum Beams from High Harmonic Generation

PubMed Central

Turpin, Alex; Rego, Laura; Picón, Antonio; San Román, Julio; Hernández-García, Carlos

2017-01-01

We investigate theoretically the generation of extreme-ultraviolet (EUV) beams carrying fractional orbital angular momentum. To this end, we drive high-order harmonic generation with infrared conical refraction (CR) beams. We show that the high-order harmonic beams emitted in the EUV/soft x-ray regime preserve the characteristic signatures of the driving beam, namely ringlike transverse intensity profile and CR-like polarization distribution. As a result, through orbital and spin angular momentum conservation, harmonic beams are emitted with fractional orbital angular momentum, and they can be synthesized into structured attosecond helical beams –or “structured attosecond light springs”– with rotating linear polarization along the azimuth. Our proposal overcomes the state of the art limitations for the generation of light beams far from the visible domain carrying non-integer orbital angular momentum and could be applied in fields such as diffraction imaging, EUV lithography, particle trapping, and super-resolution imaging. PMID:28281655

Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

PubMed

Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

2013-01-23

Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

2018-05-01

We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

Use of coupled wavelength ultraviolet light-emitting diodes for inactivation of bacteria in subsea oil-field injection water.

PubMed

Qiao, Yang; Chen, Daoyi; Wen, Diya

2018-06-04

The development of subsea injection water disinfection systems will enable the novel exploration of offshore oilfields. Ultraviolet light emitting diodes (UV-LEDs) with peak wavelengths at 255 nm, 280 nm, 350 nm, and combinations of 255 nm and 350 nm, and 280 nm and 350 nm were investigated in this study to determine their efficiency at disinfecting saprophytic bacteria, iron bacteria, and sulfate reducing bacteria. Results show that UV-LEDs with peak wavelengths at 280 nm were the most practical in this domain because of their high performance in both energy-efficiency and reactivation suppression, although 255 nm UV-LEDs achieved an optimal germicidal effect in dose-based experiments. The use of combined 280 nm and 350 nm wavelengths also induced synergistic bactericidal effects on saprophytic bacteria. Copyright © 2018. Published by Elsevier B.V.

High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Y.; Li, X.; Xu, P.

2015-02-02

We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-03-01

Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

Method for detecting radiation dose utilizing thermoluminescent material

DOEpatents

Miller, Steven D.; McDonald, Joseph C.; Eichner, Fred N.; Durham, James S.

1992-01-01

The amount of ionizing radiation to which a thermoluminescent material has been exposed is determined by first cooling the thermoluminescent material and then optically stimulating the thermoluminescent material by exposure to light. Visible light emitted by the thermoluminescent material as it is allowed to warm up to room temperature is detected and counted. The thermoluminescent material may be annealed by exposure to ultraviolet light.

Method for detecting radiation dose utilizing thermoluminescent material

DOEpatents

Miller, S.D.; McDonald, J.C.; Eichner, F.N.; Durham, J.S.

1992-08-04

The amount of ionizing radiation to which a thermoluminescent material has been exposed is determined by first cooling the thermoluminescent material and then optically stimulating the thermoluminescent material by exposure to light. Visible light emitted by the thermoluminescent material as it is allowed to warm up to room temperature is detected and counted. The thermoluminescent material may be annealed by exposure to ultraviolet light. 5 figs.

Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.

PubMed

Lee, Tae Ho; Kim, Kyeong Heon; Lee, Byeong Ryong; Park, Ju Hyun; Schubert, E Fred; Kim, Tae Geun

2016-12-28

Nitride-based ultraviolet light-emitting diodes (UV LEDs) are promising replacements for conventional UV lamps. However, the external quantum efficiency of UV LEDs is much lower than for visible LEDs due to light absorption in the p-GaN contact and electrode layers, along with p-AlGaN growth and doping issues. To minimize such absorption, we should obtain direct ohmic contact to p-AlGaN using UV-transparent ohmic electrodes and not use p-GaN as a contact layer. Here, we propose a glass-based transparent conductive electrode (TCE) produced using electrical breakdown (EBD) of an AlN thin film, and we apply the thin film to four (Al)GaN-based visible and UV LEDs with thin buffer layers for current spreading and damage protection. Compared to LEDs with optimal ITO contacts, our LEDs with AlN TCEs exhibit a lower forward voltage, higher light output power, and brighter light emission for all samples. The ohmic transport mechanism for current injection and spreading from the metal electrode to p-(Al)GaN layer via AlN TCE is also investigated by analyzing the p-(Al)GaN surface before and after EBD.

Synthesis and photoluminescence properties of a cyan-emitting phosphor Ca3(PO4)2:Eu2+ for white light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhou, Wenli; Han, Jin; Zhang, Xuejie; Qiu, Zhongxian; Xie, Qingji; Liang, Hongbin; Lian, Shixun; Wang, Jing

2015-01-01

In this paper, a cyan-emitting phosphor Ca3(PO4)2:Eu2+ (TCP:Eu2+) was synthesized and evaluated as a candidate for white light emitting diodes (WLEDs). This phosphor shows strong and broad absorption in 250-450 nm region, but the emission spectrum is prominent at around 480 nm. The emission intensity of the TCP:Eu2+ was found to be 60% and 82% of that of the commercial BaMgAl10O17:Eu2+ (BAM) under excitation at 340 nm and 370 nm, respectively. Upon excitation at 370 nm, the absolute internal and external quantum efficiencies of the Ca3(PO4)2:1.5%Eu2+ are 60% and 42%, respectively. Moreover, a white LED lamp was fabricated by coating TCP:Eu2+ with a blue-emitting BAM and a red-emitting CaAlSiN3:Eu2+ on a near-ultraviolet (375 nm) LED chip, driven by a 350 mA forward bias current, and it produces an intense white light with a color rendering index of 75.

Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

NASA Astrophysics Data System (ADS)

Li, Ling; Zhang, Yuantao; Yan, Long; Jiang, Junyan; Han, Xu; Deng, Gaoqiang; Chi, Chen; Song, Junfeng

2016-12-01

n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ˜396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ˜1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ˜3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

A simple sub-nanosecond ultraviolet light pulse generator with high repetition rate and peak power.

PubMed

Binh, P H; Trong, V D; Renucci, P; Marie, X

2013-08-01

We present a simple ultraviolet sub-nanosecond pulse generator using commercial ultraviolet light-emitting diodes with peak emission wavelengths of 290 nm, 318 nm, 338 nm, and 405 nm. The generator is based on step recovery diode, short-circuited transmission line, and current-shaping circuit. The narrowest pulses achieved have 630 ps full width at half maximum at repetition rate of 80 MHz. Optical pulse power in the range of several hundreds of microwatts depends on the applied bias voltage. The bias voltage dependences of the output optical pulse width and peak power are analysed and discussed. Compared to commercial UV sub-nanosecond generators, the proposed generator can produce much higher pulse repetition rate and peak power.

Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination.

PubMed

Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

2016-09-23

Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p < 0.001). Statistically significant differences (p < 0.001) were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs.

Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination

PubMed Central

Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

2016-01-01

Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p < 0.001). Statistically significant differences (p < 0.001) were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs. PMID:27669273

Space Radiation Detector with Spherical Geometry

NASA Technical Reports Server (NTRS)

Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

2011-01-01

A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

Space Radiation Detector with Spherical Geometry

NASA Technical Reports Server (NTRS)

Wrbanek, John D. (Inventor); Fralick, Gustave C. (Inventor); Wrbanek, Susan Y. (Inventor)

2012-01-01

A particle detector is provided, the particle detector including a spherical Cherenkov detector, and at least one pair of detector stacks. In an embodiment of the invention, the Cherenkov detector includes a sphere of ultraviolet transparent material, coated by an ultraviolet reflecting material that has at least one open port. The Cherenkov detector further includes at least one photodetector configured to detect ultraviolet light emitted from a particle within the sphere. In an embodiment of the invention, each detector stack includes one or more detectors configured to detect a particle traversing the sphere.

Anticounterfeiting Quick Response Code with Emission Color of Invisible Metal-Organic Frameworks as Encoding Information.

PubMed

Wang, Yong-Mei; Tian, Xue-Tao; Zhang, Hui; Yang, Zhong-Rui; Yin, Xue-Bo

2018-06-21

Counterfeiting is a global epidemic that is compelling the development of new anticounterfeiting strategy. Herein, we report a novel multiple anticounterfeiting encoding strategy of invisible fluorescent quick response (QR) codes with emission color as information storage unit. The strategy requires red, green, and blue (RGB) light-emitting materials for different emission colors as encrypting information, single excitation for all of the emission for practicability, and ultraviolet (UV) excitation for invisibility under daylight. Therefore, RGB light-emitting nanoscale metal-organic frameworks (NMOFs) are designed as inks to construct the colorful light-emitting boxes for information encrypting, while three black vertex boxes were used for positioning. Full-color emissions are obtained by mixing the trichromatic NMOFs inks through inkjet printer. The encrypting information capacity is easily adjusted by the number of light-emitting boxes with the infinite emission colors. The information is decoded with specific excitation light at 275 nm, making the QR codes invisible under daylight. The composition of inks, invisibility, inkjet printing, and the abundant encrypting information all contribute to multiple anticounterfeiting. The proposed QR codes pattern holds great potential for advanced anticounterfeiting.

Light transmission and ultraviolet protection of contact lenses under artificial illumination.

PubMed

Artigas, José M; Navea, Amparo; García-Domene, M Carmen; Gené, Andrés; Artigas, Cristina

2016-04-01

To determine the spectral transmission of contact lenses (CLs), with and without an ultraviolet (UV) filter to evaluate their capacity for protection under UV radiation from artificial illumination (incandescent, fluorescent, xenon (Xe) lamps, or white LEDs (light-emitting diode)). The transmission curves of nine soft CLs were obtained by using a PerkinElmer Lambda 35 UV-vis spectrophotometer. A CIE standard was used for the emission spectra of incandescent and fluorescent lamps, and Xe lamps and white LEDs were measured by using an International Light Technologies ILT-950 spectroradiometer. Five of the nine soft CLs analysed state that they incorporate UV filters, but the other four do not specify anything in this regard. The spectral transmission of all the CLs studied is excellent in the visible region. The CLs with UV filters filter out this radiation more or less effectively. Xe lamps emit a part in the UV region. Incandescent, fluorescent and white LEDs do not emit at all in the UV. Incorporating UV filters is important when the illumination is from a Xe lamp since this light source emits in the UV region. This, however, does not occur with incandescent and fluorescent lamps or white LEDs. The CLs that do incorporate UV filters meet all the standard requirements that the U.S. FDA (Food and Drug Administration) has for UV-blocking CLs Class II (OcularScience, CooperVision and Neolens), and AcuvueMoist and HydronActifresh400 even comply with the stricter Class I. The CLs without UV filters let UVA, UVB and even some UVC through. Copyright © 2015. Published by Elsevier Ltd.

Excimer Lasers In Medicine

NASA Astrophysics Data System (ADS)

Tittel, Frank K.; Saidi, Iyad S.; Pettit, George H.; Wisoff, P. J.; Sauerbrey, Roland A.

1989-06-01

Excimer lasers emit light energy, short optical pulses at ultraviolet wavelengths, that results in a unique laser tissue interaction. This has led to an increasing number of studies into medical applications of these lasers in fields such as ophthalmology, urology, cardiology and neurology.

Deep ultraviolet semiconductor light sources for sensing and security

NASA Astrophysics Data System (ADS)

Shatalov, Max; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis

2009-09-01

III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.

UV lasers for drilling and marking applications.

PubMed

Hannon, T

1999-10-01

Lasers emitting ultraviolet (UV) light have unique capabilities for precision micromachining and marking plastic medical devices. This review of the benefits offered by laser technology includes a look at recently developed UV diode-pumped solid-state lasers and their key features.

The role of commercial tanning beds and ultraviolet A light in the treatment of psoriasis.

PubMed

Su, Johanna; Pearce, Daniel J; Feldman, Steven R

2005-01-01

Phototherapy is an effective, safe psoriasis treatment administered via office-based units or home devices. There is controversy over the use of commercial tanning beds; ultraviolet B (UVB) has documented efficacy although commercial beds emit largely UVA. To determine the efficacy of UVA and the role of commercial tanning beds in treating psoriasis. A literature search of UVA and commercial tanning was performed. UVA can be effective for psoriasis, but achieving the high doses required may not be practical. Tanning beds do emit UVB although amounts are variable. Because of variability in UVA and UVB output in different tanning bulbs, it is difficult to predict response rates using commercial tanning beds. UVA can be used to treat psoriasis but may not be practical. Commercial tanning beds, emitting both UVA and UVB, have a role in treating psoriasis as an alternative to office-based therapy.

Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2015-04-13

The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors.

PubMed

Antić, Ž; Kuzman, S; Đorđević, V; Dramićanin, M D; Thundat, T

2017-06-01

Here we report the synthesis and structural, morphological, and photoluminescence analysis of white- and blue-light-emitting Dy 3 + - and Tm 3 + -doped Gd 2 Ti 2 O 7 nanophosphors. Single-phase cubic Gd 2 Ti 2 O 7 nanopowders consist of compact, dense aggregates of nanoparticles with an average size of ~25 nm for Dy 3 + -doped and ~50 nm for Tm 3 + -doped samples. The photoluminescence results indicated that ultraviolet (UV) light excitation of the Dy 3 + -doped sample resulted in direct generation of white light, while a dominant yellow emission was obtained under blue-light excitation. Intense blue light was obtained for Tm 3 + -doped Gd 2 Ti 2 O 7 under UV excitation suggesting that this material could be used as a blue phosphor. Copyright © 2016 John Wiley & Sons, Ltd.

Modeling Ultraviolet (UV) Light Emitting Diode (LED) Energy Propagation in Reactor Vessels

DTIC Science & Technology

2014-03-27

21 Table 4: UV Mercury Lamps , UV LED Bulbs, and Visible LED Bulb Advantages and Disadvantages...over low pressure mercury lamps include smaller size, minimal start up time, and no hazardous material. Projections show UV LEDs will follow similar

All-in-one light-tunable borated phosphors with chemical and luminescence dynamical control resolution.

PubMed

Lin, Chun Che; Liu, Yun-Ping; Xiao, Zhi Ren; Wang, Yin-Kuo; Cheng, Bing-Ming; Liu, Ru-Shi

2014-06-25

Single-composition white-emitting phosphors with superior intrinsic properties upon excitation by ultraviolet light-emitting diodes are important constituents of next-generation light sources. Borate-based phosphors, such as NaSrBO3:Ce(3+) and NaCaBO3:Ce(3+), have stronger absorptions in the near-ultraviolet region as well as better chemical/physical stability than oxides. Energy transfer effects from sensitizer to activator caused by rare-earth ions are mainly found in the obtained photoluminescence spectra and lifetime. The interactive mechanisms of multiple dopants are ambiguous in most cases. We adjust the doping concentration in NaSrBO3:RE (RE = Ce(3+), Tb(3+), Mn(2+)) to study the energy transfer effects of Ce(3+) to Tb(3+) and Mn(2+) by comparing the experimental data and theoretical calculation. The vacuum-ultraviolet experimental determination of the electronic energy levels for Ce(3+) and Tb(3+) in the borate host regarding the 4f-5d and 4f-4f configurations are described. Evaluation of the Ce(3+)/Mn(2+) intensity ratios as a function of Mn(2+) concentration is based on the analysis of the luminescence dynamical process and fluorescence lifetime measurements. The results closely agree with those directly obtained from the emission spectra. Density functional calculations are performed using the generalized gradient approximation plus an on-site Coulombic interaction correction scheme to investigate the forbidden mechanism of interatomic energy transfer between the NaSrBO3:Ce(3+) and NaSrBO3:Eu(2+) systems. Results indicate that the NaSrBO3:Ce(3+), Tb(3+), and Mn(2+) phosphors can be used as a novel white-emitting component of UV radiation-excited devices.

Recent developments in white light emitting diodes

NASA Astrophysics Data System (ADS)

Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

2018-05-01

In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application because they can emit visible light strongly under blue light irradiation. These are chemically, thermally and mechanically stable materials with high efficiency to down convert blue radiation into green and red. Efficient white light can be generated by coating these phosphors on blue LED.CRI of white emitting LED lamp can be improved significantly if green and red emitting phosphors are coated on efficient blue emitting LED chips. In this approach CRI will be maintained if appropriate combination of red, green along with blue emission is used. This article reviews some recent developments in phosphors for white light emitting diodes.

Luminescent carbon quantum dots with high quantum yield as a single white converter for white light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, X. T.; Zhang, Y.; Liu, X. G., E-mail: liuxuguang@tyut.edu.cn

Carbon quantum dots (CQDs) with high quantum yield (51.4%) were synthesized by a one-step hydrothermal method using thiosalicylic acid and ethylenediamine as precursor. The CQDs have the average diameter of 2.3 nm and possess excitation-independent emission wavelength in the range from 320 to 440 nm excitation. Under an ultraviolet (UV) excitation, the CQDs aqueous solutions emit bright blue fluorescence directly and exhibit broad emission with a high spectral component ratio of 67.4% (blue to red intensity to total intensity). We applied the CQDs as a single white-light converter for white light emitting diodes (WLEDs) using a UV-LED chip as the excitation lightmore » source. The resulted WLED shows superior performance with corresponding color temperature of 5227 K and the color coordinates of (0.34, 0.38) belonging to the white gamut.« less

UV Tanning Equipment | Radiation Protection | US EPA

EPA Pesticide Factsheets

2017-08-07

Sun lamps and tanning equipment emit ultraviolet (UV) rays. People who are exposed to UV rays over a long period of time are more likely to develop skin cancer. People with light skin are in more danger because their skin is more sensitive to UV rays.

Surface hole gas enabled transparent deep ultraviolet light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

2018-07-01

The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

Luminescence properties of Eu 3+ and Sm 3+ coactivated Gd(III) tungstate phosphor for light-emitting diodes

NASA Astrophysics Data System (ADS)

Wei, Qiong; Chen, Donghua

2009-09-01

Rare-earth ions coactivated red phosphors Gd 0.2RE 1.8(WO 4) 3 (RE=Eu 3+ and Sm 3+) were synthesized by conventional solid-state reaction using boric acid as a flux agent. The samples were characterized by X-ray diffractometer (XRD), energy-dispersive X-ray spectrometer (EDS) and luminescence spectrometer (LS). The results showed that the Eu-Sm system exhibits higher emission intensity than those of the Eu single-doped system and Sm separate-doped system under ultraviolet (UV) radiation. Samarium(III) ions are effective in broadening and strengthened absorptions around 400 nm. Furthermore, it exhibits enhanced luminescence emission. when the mole ratio of boric acid is about 0.16, the luminescence capability is optimum. Two strongest lines at ultraviolet (394 nm) and blue (465 nm) in excitation spectra of these phosphors match well with the output wavelengths of UV and blue GaN-based light-emitting diodes (LEDs) chips.

High-luminosity blue and blue-green gallium nitride light-emitting diodes.

PubMed

Morkoç, H; Mohammad, S N

1995-01-06

Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

The application of UV LEDs for differential optical absorption spectroscopy

NASA Astrophysics Data System (ADS)

Geiko, Pavel P.; Smirnov, Sergey S.; Samokhvalov, Ignatii V.

2018-04-01

Modern UV LEDs represent a potentially very advantageous alternative to thermal light sources, in particular xenon arc lamps, which are the most common light sources in trace gas-analyzers. So, the light-emitting diodes are very attractive for use of as light sources for Long Path Differential Optical Absorption Spectroscopy (DOAS) measurements of trace gases in the open atmosphere. Recent developments in fibre-coupling telescope technology and the availability of ultraviolet light emitting diodes have now allowed us to construct a portable, long path DOAS instrument for use at remote locations and specifically for measuring degassing from active volcanic systems. First of all, we are talking about the measurement of sulphur dioxide, carbon disulphide and, oxides of chlorine and bromine. The parallel measurements of sulfur dioxide using a certified gas analyzer, were conducted and showed good correlation.

Enhanced out-coupling efficiency of organic light-emitting diodes using an nanostructure imprinted by an alumina nanohole array

NASA Astrophysics Data System (ADS)

Endo, Kuniaki; Adachi, Chihaya

2014-03-01

We demonstrate organic light-emitting diodes (OLEDs) with enhanced out-coupling efficiency containing nanostructures imprinted by an alumina nanohole array template that can be applied to large-emitting-area and flexible devices using a roll-to-roll process. The nanostructures are imprinted on a glass substrate by an ultraviolet nanoimprint process using an alumina nanohole array mold and then an OLED is fabricated on the nanostructures. The enhancement of out-coupling efficiency is proportional to the root-mean-square roughness of the nanostructures, and a maximum improvement of external electroluminescence quantum efficiency of 17% is achieved. The electroluminescence spectra of the OLEDs indicate that this improvement is caused by enhancement of the out-coupling of surface plasmon polaritons.

A route to improved extraction efficiency of light-emitting diodes

NASA Astrophysics Data System (ADS)

Zhu, H.; Shan, C. X.; Wang, L. K.; Yang, Y.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.

2010-01-01

The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.

Carrier Conduction and Light Emission by Modification of Poly(alkylfluorene) Interface under Vacuum Ultraviolet Light Irradiation

NASA Astrophysics Data System (ADS)

Ohmori, Yutaka; Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke

2013-03-01

Organic field effect transistors (OFETs) have been extensively studied for flexible electronics. The characteristics of poly(9,9-dioctylfluorenyl-2,7-dyl) (F8) modified by thermal or light are strongly dependent on the carrier transport and optical characteristics. We investigate all solution-processed OFETs with Ag nano-ink as gate electrodes patterned by Vacuum Ultraviolet (VUV) (172 nm). Bi-layer gate insulators of amorphous fluoro-polymer CYTOP (Asahi Glass Corp.) and poly(methylmethacrylate) (PMMA) were used. Top-gate-type OFETs with ITO source/drain electrode utilizing F8 or poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) as an active layer were fabricated, and investigated the carrier conduction and emission characteristic. Without VUV irradiation, both OFETs showed the ambipolar and light-emitting characteristics. On the other hand, F8 devices with VUV exhibited only p-type conduction. The quenching centers were generated in F8 layer by VUV irradiation, which are related to the electron trap sites at the interface. OFETs with F8BT showed both p- and n-type conduction even after VUV. F8BT suffers less damage by VUV and maintain light emission. Light emitting transistors were realized utilizing F8BT patterned by VUV irradiation. This research was partially supported financially by MEXT. The authors thank Harima Chemicals Inc. for providing Ag nano-ink.

Calibration of a microchannel plate based extreme ultraviolet grazing incident spectrometer at the Advanced Light Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakeman, M. S.; Lawrence Berkeley National Laboratory, Berkeley, California 94720; Tilborg, J. van

We present the design and calibration of a microchannel plate based extreme ultraviolet spectrometer. Calibration was performed at the Advance Light Source (ALS) at the Lawrence Berkeley National Laboratory (LBNL). This spectrometer will be used to record the single shot spectrum of radiation emitted by the tapered hybrid undulator (THUNDER) undulator installed at the LOASIS GeV-class laser-plasma-accelerator. The spectrometer uses an aberration-corrected concave grating with 1200 lines/mm covering 11-62 nm and a microchannel plate detector with a CsI coated photocathode for increased quantum efficiency in the extreme ultraviolet. A touch screen interface controls the grating angle, aperture size, and placementmore » of the detector in vacuum, allowing for high-resolution measurements over the entire spectral range.« less

IRIS Ultraviolet Spectral Properties of a Sample of X-Class Solar Flares

NASA Astrophysics Data System (ADS)

Butler, Elizabeth; Kowalski, Adam; Cauzzi, Gianna; Allred, Joel C.; Daw, Adrian N.

2018-06-01

The white-light (near-ultraviolet (NUV) and optical) continuum emission comprises the majority of the radiated energy in solar flares. However, there are nearly as many explanations for the origin of the white-light continuum radiation as there are white-light flares that have been studied in detail with spectra. Furthermore, there are rarely robust constraints on the time-resolved dynamics in the white-light emitting flare layers. We are conducting a statistical study of the properties of Fe II lines, Mg II lines, and NUV continuum intensity in bright flare kernels observed by the Interface Region Imaging Spectrograph (IRIS), in order to provide comprehensive constraints for radiative-hydrodynamic flare models. Here we present a new technique for identifying bright flare kernels and preliminary relationships among IRIS spectral properties for a sample of X-class solar flares.

Efficient photochemical generation of peroxycarboxylic nitric anhydrides with ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Rider, N. D.; Taha, Y. M.; Odame-Ankrah, C. A.; Huo, J. A.; Tokarek, T. W.; Cairns, E.; Moussa, S. G.; Liggio, J.; Osthoff, H. D.

2015-01-01

Photochemical sources of peroxycarboxylic nitric anhydrides (PANs) are utilized in many atmospheric measurement techniques for calibration or to deliver an internal standard. Conventionally, such sources rely on phosphor-coated low-pressure mercury (Hg) lamps to generate the UV light necessary to photo-dissociate a dialkyl ketone (usually acetone) in the presence of a calibrated amount of nitric oxide (NO) and oxygen (O2). In this manuscript, a photochemical PAN source in which the Hg lamp has been replaced by arrays of ultraviolet light-emitting diodes (UV-LEDs) is described. The output of the UV-LED source was analyzed by gas chromatography (PAN-GC) and thermal dissociation cavity ring-down spectroscopy (TD-CRDS). Using acetone, diethyl ketone (DIEK), diisopropyl ketone (DIPK), or di-n-propyl ketone (DNPK), respectively, the source produces peroxyacetic (PAN), peroxypropionic (PPN), peroxyisobutanoic (PiBN), or peroxy-n-butanoic nitric anhydride (PnBN) from NO in high yield (> 90%). Box model simulations with a subset of the Master Chemical Mechanism (MCM) were carried out to rationalize products yields and to identify side products. The use of UV-LED arrays offers many advantages over conventional Hg lamp setups, including greater light output over a narrower wavelength range, lower power consumption, and minimal generation of heat.

Photovoltaic powered ultraviolet and visible light-emitting diodes for sustainable point-of-use disinfection of drinking waters.

PubMed

Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas; Jagals, Paul; Stuetz, Richard

2014-09-15

For many decades, populations in rural and remote developing regions will be unable to access centralised piped potable water supplies, and indeed, decentralised options may be more sustainable. Accordingly, improved household point-of-use (POU) disinfection technologies are urgently needed. Compared to alternatives, ultraviolet (UV) light disinfection is very attractive because of its efficacy against all pathogen groups and minimal operational consumables. Though mercury arc lamp technology is very efficient, it requires frequent lamp replacement, involves a toxic heavy metal, and their quartz envelopes and sleeves are expensive, fragile and require regular cleaning. An emerging alternative is semiconductor-based units where UV light emitting diodes (UV-LEDs) are powered by photovoltaics (PV). Our review charts the development of these two technologies, their current status, and challenges to their integration and POU application. It explores the themes of UV-C-LEDs, non-UV-C LED technology (e.g. UV-A, visible light, Advanced Oxidation), PV power supplies, PV/LED integration and POU suitability. While UV-C LED technology should mature in the next 10 years, research is also needed to address other unresolved barriers to in situ application as well as emerging research opportunities especially UV-A, photocatalyst/photosensitiser use and pulsed emission options. Copyright © 2014 Elsevier B.V. All rights reserved.

Efficient photochemical generation of peroxycarboxylic nitric anhydrides with ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Rider, N. D.; Taha, Y. M.; Odame-Ankrah, C. A.; Huo, J. A.; Tokarek, T. W.; Cairns, E.; Moussa, S. G.; Liggio, J.; Osthoff, H. D.

2015-07-01

Photochemical sources of peroxycarboxylic nitric anhydrides (PANs) are utilized in many atmospheric measurement techniques for calibration or to deliver an internal standard. Conventionally, such sources rely on phosphor-coated low-pressure mercury (Hg) lamps to generate the UV light necessary to photo-dissociate a dialkyl ketone (usually acetone) in the presence of a calibrated amount of nitric oxide (NO) and oxygen (O2). In this manuscript, a photochemical PAN source in which the Hg lamp has been replaced by arrays of ultraviolet light-emitting diodes (UV-LEDs) is described. The output of the UV-LED source was analyzed by gas chromatography (PAN-GC) and thermal dissociation cavity ring-down spectroscopy (TD-CRDS). Using acetone, diethyl ketone (DIEK), diisopropyl ketone (DIPK), or di-n-propyl ketone (DNPK), respectively, the source produces peroxyacetic (PAN), peroxypropionic (PPN), peroxyisobutanoic (PiBN), or peroxy-n-butanoic nitric anhydride (PnBN) from NO in high yield (> 90 %). Box model simulations with a subset of the Master Chemical Mechanism (MCM) were carried out to rationalize product yields and to identify side products. The present work demonstrates that UV-LED arrays are a viable alternative to current Hg lamp setups.

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

2016-01-14

Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage ismore » not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

PubMed Central

Seo, Tae Hoon; Lee, Seula; Min, Kyung Hyun; Chandramohan, S.; Park, Ah Hyun; Lee, Gun Hee; Park, Min; Suh, Eun-Kyung; Kim, Myung Jong

2016-01-01

This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs. PMID:27387274

Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

DOE PAGES

Miller, Mary A.; Tangyunyong, Paiboon; Edward I. Cole, Jr.

2016-01-12

In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increasedmore » leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

PubMed

Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

2017-02-08

To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

NASA Astrophysics Data System (ADS)

Seo, Tae Hoon; Lee, Seula; Min, Kyung Hyun; Chandramohan, S.; Park, Ah Hyun; Lee, Gun Hee; Park, Min; Suh, Eun-Kyung; Kim, Myung Jong

2016-07-01

This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs.

On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

2018-01-01

This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Caruso, Fulvio; Mosca, Mauro; Rinella, Salvatore; Macaluso, Roberto; Calì, Claudio; Saiano, Filippo; Feltin, Eric

2016-01-01

We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the organic dye is compromised, resulting in a chromatic shift from Commission Internationale de l'Eclairage (CIE) ( x; y) coordinates (0.30;0.39) towards the color of the pump (0.15;0.04). Besides photodegradation of the dye, we address a phenomenon attributed to modification of the polymer matrix activated by the LED's blue light energy as confirmed by ultraviolet-visible and Fourier-transform infrared spectroscopic analyses. Three methods for improving the overall stability of the organic coating are presented.

Quantitative surface temperature measurement using two-color thermographic phosphors and video equipment

NASA Technical Reports Server (NTRS)

Buck, Gregory M. (Inventor)

1989-01-01

A thermal imaging system provides quantitative temperature information and is particularly useful in hypersonic wind tunnel applications. An object to be measured is prepared by coating with a two-color, ultraviolet-activated, thermographic phosphor. The colors emitted by the phosphor are detected by a conventional color video camera. A phosphor emitting blue and green light with a ratio that varies depending on temperature is used so that the intensity of light in the blue and green wavelengths detected by the blue and green tubes in the video camera can be compared. Signals representing the intensity of blue and green light at points on the surface of a model in a hypersonic wind tunnel are used to calculate a ratio of blue to green light intensity which provides quantitative temperature information for the surface of the model.

Preparation and Characterization of UV Emitting Fluoride Phosphors for Phototherapy Lamps

NASA Astrophysics Data System (ADS)

Belsare, P. D.; Moharil, S. V.; Joshi, C. P.; Omanwar, S. K.

2011-10-01

The use of ultraviolet radiation for the treatment of various skin diseases is well known for long time. Phototherapy employs ultraviolet-blue radiation to cure skin diseases. The basis of phototherapy is believed to be the direct interaction of light of certain frequencies with tissue to cause a change in immune response. Currently dermatologists use UV lamps having specific emissions in UV region for treating various skin diseases. The treatment of skin diseases using artificial sources of UV radiation is now well established and more than 50 types of skin diseases are treated by phototherapy. This is an effective treatment for many skin disorders, such as psoriasis, vitiligo, ofujis disease, morphea , scleroderma, cutaneous T-cell lymphoma, lupus erythematosus, hyperbilirubinemia commonly known as infant jaundice, acne vulgaris, This paper reports photoluminescence properties of UV emitting fluoride phosphors prepared by wet chemical method. Emission characteristics of these phosphors are found similar to those of commercial UV lamp phosphors with comparable intensities. The usefulness of UV emitting fluoride phosphor is discussed in the paper.

Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

PubMed Central

Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

2017-01-01

We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

NASA Astrophysics Data System (ADS)

Park, Jae-Seong; Kim, Jae-Ho; Kim, Jun-Yong; Kim, Dae-Hyun; Na, Jin-Young; Kim, Sun-Kyung; Kang, Daesung; Seong, Tae-Yeon

2017-01-01

Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

Ultraviolet light-emitting diodes in water disinfection.

PubMed

Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

2009-06-01

The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial disinfection. The emitted wavelength was found to be an essential factor when using LEDs; thus, care should be taken in selecting the proper LED for maximum disinfection.

Spectral broadening in electroluminescence of white organic light-emitting diodes based on complementary colors

NASA Astrophysics Data System (ADS)

Kim, Young Min; Park, Young Wook; Choi, Jin Hwan; Ju, Byeong Kwon; Jung, Jae Hoon; Kim, Jai Kyeong

2007-01-01

The authors report the optical and electroluminescent (EL) properties of white organic light-emitting diodes (OLEDs) which have two emitters with similar structures: 1, 1, 4, 4-tetraphenyl-1, 3-butadiene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline have an emission peak of 400nm around the near ultraviolet, and tris-(8-hydroxyquinoline) aluminum doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran has an emission peak of 580nm producing a yellow color. The EL spectra of the white OLED have shown a broadening through visual range from 400to780nm. This spectral broadening is related to an exciplex emission at the organic solid interface.

Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Ruijun; Liu Duo; Zuo Zhiyuan

2012-03-15

We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K{sub 2}S{sub 2}O{sub 8} under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10more » min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.« less

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

PubMed

Lee, Byeong Ryong; Kim, Tae Geun

2017-01-01

This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

CORONA-INDUCED OZONATION COUPLED WITH PHOTOOXIDATION: AN ENVIRONMENTALLY FRIENDLY AND COST-EFFECTIVE METHOD

EPA Science Inventory

We have developed a process that uses surface corona for the production of ozone by passing air or oxygen through a high voltage electrical discharge and the emitted ultraviolet light is being used to activate a photocatalyst. A thin film of nanostructured TiO2 with primary part...

Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

NASA Astrophysics Data System (ADS)

Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

2018-04-01

We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

Effect of device package on optical, spectral, and thermal properties of InGaN/GaN near-ultraviolet lateral light-emitting diodes

NASA Astrophysics Data System (ADS)

Lee, Soo Hyun; Guan, Xiang-Yu; Jeon, Soo-Kun; Yu, Jae Su

2017-09-01

We investigated the package effect on the temperature-dependent optical and spectral characteristics of InGaN/GaN near-ultraviolet (NUV) lateral light-emitting diodes (LLEDs) on the metal heatsink (MH) and package (PKG) in the injection current range of 0 - 500 mA at 298 and 358 K. For the NUV LLEDs on the MH, the device characteristics reflected directly its chip performance. For the NUV LLEDs on the PKG, the rapidly varied spectral shift as well as the reduced device efficiency was observed due to the increased number of layers with relatively low thermal conductivities. The junction temperature ( T j ) and thermal resistance of the NUV LLEDs on the PKG were also significantly increased compared to the NUV LLEDs on the MH. The three-dimensional heat transfer simulations for both the devices were carried out to obtain the temperature distributions by finite element method. The theoretically calculated T j values showed a good agreement with the experimentally measured T j values.

Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

PubMed Central

2013-01-01

We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs. PMID:24295342

Ultraviolet electroluminescence from hybrid inorganic/organic ZnO/GaN/poly(3-hexylthiophene) dual heterojunctions.

PubMed

Chen, Yungting; Shih, Hanyu; Wang, Chunhsiung; Hsieh, Chunyi; Chen, Chihwei; Chen, Yangfang; Lin, Taiyuan

2011-05-09

Based on hybrid inorganic/organic n-ZnO nanorods/p-GaN thin film/poly(3-hexylthiophene)(P3HT) dual heterojunctions, the light emitting diode (LED) emits ultraviolet (UV) radiation (370 nm - 400 nm) and the whole visible light (400 nm -700 nm) at the low injection current density. Meanwhile, under the high injection current density, the UV radiation overwhelmingly dominates the room-temperature electroluminescence spectra, exponentially increases with the injection current density and possesses a narrow full width at half maximum less than 16 nm. Comparing electroluminescence with photoluminescence spectra, an enormously enhanced transition probability of the UV luminescence in the electroluminescence spectra was found. The P3HT layer plays an essential role in helping the UV emission from p-GaN material because of its hole-conductive characteristic as well as the band alignment with respect to p-GaN. With our new finding, the result shown here may pave a new route for the development of high brightness LEDs derived from hybrid inorganic/organic heterojuctions.

Photoluminescence properties and structure of double perovskite Ba2ZnWO6:Eu3+, Li+ as a novel red emitting phosphor

NASA Astrophysics Data System (ADS)

Chen, Peng; Yang, Dingming; Hu, Wenyuan; Zhang, Jing; Wu, Yadong

2017-12-01

Novel red-emitting Ba2Zn1-x-yWO6:xEu3+, yLi+ phosphors were prepared using a high-temperature solid-state method, and the crystal structure, the photoluminescence properties and the doping concentrations of Eu3+ and Li+ were investigated. The results show that these phosphors can be excited by near-ultraviolet light (250-400 nm) and co-doped Li+ can significantly enhance their PL performance. An intense red emission peak at 598 nm (5D0-7F1 transitions) was observed with an excitation wavelength of 316 nm. The CIE chromaticity coordinates of the phosphors are located in the red region, indicating that the BZW:Eu3+, Li+ phosphor holds promise as a red phosphor for near-ultraviolet excited WLEDs.

SUMER: Solar Ultraviolet Measurements of Emitted Radiation

NASA Technical Reports Server (NTRS)

Wilhelm, K.; Axford, W. I.; Curdt, W.; Gabriel, A. H.; Grewing, M.; Huber, M. C. E.; Jordan, M. C. E.; Lemaire, P.; Marsch, E.; Poland, A. I.

1988-01-01

The SUMER (solar ultraviolet measurements of emitted radiation) experiment is described. It will study flows, turbulent motions, waves, temperatures and densities of the plasma in the upper atmosphere of the Sun. Structures and events associated with solar magnetic activity will be observed on various spatial and temporal scales. This will contribute to the understanding of coronal heating processes and the solar wind expansion. The instrument will take images of the Sun in EUV (extreme ultra violet) light with high resolution in space, wavelength and time. The spatial resolution and spectral resolving power of the instrument are described. Spectral shifts can be determined with subpixel accuracy. The wavelength range extends from 500 to 1600 angstroms. The integration time can be as short as one second. Line profiles, shifts and broadenings are studied. Ratios of temperature and density sensitive EUV emission lines are established.

Instense red phosphors for UV light emitting diode devices.

PubMed

Cao, Fa-Bin; Tian, Yan-Wen; Chen, Yong-Jie; Xiao, Lin-Jiu; Liu, Yun-Yi

2010-03-01

Ca(x)Sr1-x-1.5y-0.5zMoO4:yEu3+ zNa+ red phosphors were prepared by solid-state reaction using Na+ as charge supply for LEDs (light emitting diodes). The content of charge compensator, Ca2+ concentration, synthesis temperature, reaction time, and Eu3+ concentration were the keys to improving the properties of luminescence and crystal structure of red phosphors. The photoluminescence spectra shows the red phosphors are effectively excited at 616 nm by 311 nm, 395 nm, and 465 nm light. The wavelengths of 395 and 465 nm nicely match the widely applied emission wavelengths of ultraviolet or blue LED chips. Its chromaticity coordinates (CIE) are calculated to be x = 0.65, y = 0.32. Bright red light can be observed by the naked eye from the LED-based Ca0.60Sr0.25MoO4:0.08Eu3+ 0.06Na+.

Effect of core quantum-dot size on power-conversion-efficiency for silicon solar-cells implementing energy-down-shift using CdSe/ZnS core/shell quantum dots.

PubMed

Baek, Seung-Wook; Shim, Jae-Hyoung; Seung, Hyun-Min; Lee, Gon-Sub; Hong, Jin-Pyo; Lee, Kwang-Sup; Park, Jea-Gun

2014-11-07

Silicon solar cells mainly absorb visible light, although the sun emits ultraviolet (UV), visible, and infrared light. Because the surface reflectance of a textured surface with SiNX film on a silicon solar cell in the UV wavelength region (250-450 nm) is higher than ∼27%, silicon solar-cells cannot effectively convert UV light into photo-voltaic power. We implemented the concept of energy-down-shift using CdSe/ZnS core/shell quantum-dots (QDs) on p-type silicon solar-cells to absorb more UV light. CdSe/ZnS core/shell QDs demonstrated clear evidence of energy-down-shift, which absorbed UV light and emitted green-light photoluminescence signals at a wavelength of 542 nm. The implementation of 0.2 wt% (8.8 nm QDs layer) green-light emitting CdSe/ZnS core/shell QDs reduced the surface reflectance of the textured surface with SiNX film on a silicon solar-cell from 27% to 15% and enhanced the external quantum efficiency (EQE) of silicon solar-cells to around 30% in the UV wavelength region, thereby enhancing the power conversion efficiency (PCE) for p-type silicon solar-cells by 5.5%.

Structural, electrical and optical characterization of high brightness phosphor-free white light emitting diodes

NASA Astrophysics Data System (ADS)

Omiya, Hiromasa

Much interest currently exists in GaN and related materials for applications such as light-emitting devices operating in the amber to ultraviolet range. Solid-state lighting (SSL) using these materials is widely being investigated worldwide, especially due to their high-energy efficiency and its impact on environmental issues. A new approach for solid-state lighting uses phosphor-free white light emitting diodes (LEDs) that consist of blue, green, and red quantum wells (QW), all in a single device. This approach leads to improved color rendering, and directionality, compared to the conventional white LEDs that use yellow phosphor on blue or ultraviolet emitters. Improving the brightness of these phosphor-free white LEDs should enhance and accelerate the development of SSL technology. The main objective of the research reported in this dissertation is to provide a comprehensive understanding of the nature of the multiple quantum wells used in phosphor-free white LEDs. This dissertation starts with an introduction to lighting history, the fundamental concepts of nitride semiconductors, and the evolution of LED technology. Two important challenges in LED technology today are metal-semiconductor contacts and internal piezoelectric fields present in quantum well structures. Thus, the main portion of this dissertation consists of three parts dealing with metal-semiconductor interfaces, single quantum well structures, and multiple quantum well devices. Gold-nickel alloys are widely used as contacts to the p-region of LEDs. We have performed a detailed study for its evolution under standard annealing steps. The atomic arrangement of gold at its interface with GaN gives a clear explanation for the improved ohmic contact performance. We next focus on the nature of InGaN QWs. The dynamic response of the QWs was studied with electron holography and time-resolved cathodoluminescence. Establishing the correlation between energy band structure and the light emission spectra elucidated the nature of light emission. Finally, we studied a more complex device, consisting of two red, one green, and two blue emitting quantum wells. A correlation between structural, electrical and optical measurements allows us to understand the dynamic performance of this device. The collective results of this dissertation lead to an improved understanding of the performance of high-brightness, phosphor-free, white LEDs.

Tunnel-injected sub-260 nm ultraviolet light emitting diodes

NASA Astrophysics Data System (ADS)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

2017-05-01

We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.

AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices

NASA Astrophysics Data System (ADS)

Zhao, Lu; Zhang, Shuo; Zhang, Yun; Yan, Jianchang; Zhang, Lian; Ai, Yujie; Guo, Yanan; Ni, Ruxue; Wang, Junxi; Li, Jinmin

2018-01-01

We demonstrate AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sputter-deposited AlN templates upon sapphire substrates. An AlN/AlGaN superlattices structure is inserted as a dislocation filter between the LED structure and the AlN template. The full width at half maximum values for (0002) and (10 1 bar 2) X-ray rocking curves of the n-type Al0.56Ga0.44N layer are 513 and 1205 arcsec, respectively, with the surface roughness of 0.52 nm. The electron concentration and mobility measured by Hall measurement are 9.3 × 1017cm-3 and 54 cm2/V·s at room temperature, respectively. The light output power of a 282-nm LED reaches 0.28 mW at 20 mA with an external quantum efficiency of 0.32%. And the values of leakage current and forward voltage of the LEDs are ∼3 nA at -10 V and 6.9 V at 20 mA, respectively, showing good electrical performance. It is expected that the cost of the UV-LED can be reduced by using sputter-deposited AlN template.

Tunable hole injection of solution-processed polymeric carbon nitride towards efficient organic light-emitting diode

NASA Astrophysics Data System (ADS)

Zhang, Xiaowen; Zheng, Qinghong; Tang, Zhenyu; Li, Wanshu; Zhang, Yan; Xu, Kai; Xue, Xiaogang; Xu, Jiwen; Wang, Hua; Wei, Bin

2018-02-01

Polymeric carbon nitride (CNxHy) has been facilely synthesized from dicyandiamide and functions as a solution-processed hole injection layer in organic light-emitting diodes (OLEDs). The measurements using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and impedance spectroscopy elucidate that CNxHy exhibits superior film morphology and extra electric properties such as tailored work function and tunable hole injection. The luminous efficiency of CNxHy-based OLED is found to improve by 76.6% in comparison to the counterpart using favorite solution-processed poly(ethylene dioxythiophene):poly(styrene sulfonate) as the hole injection layer. Our results also pave a way for broadening carbon nitride applications in organic electronics using the solution process.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shamirzaev, V. T., E-mail: tim@isp.nsc.ru; Gaisler, V. A.; Shamirzaev, T. S.

The spectrum of ultraviolet (UV) InGaN/GaN light-emitting diodes and its dependence on the current flowing through the structure are studied. The intensity of the UV contribution to the integrated diode luminescence increases steadily with increasing density of current flowing through the structure, despite a drop in the emission quantum efficiency. The electroluminescence excitation conditions that allow the fraction of UV emission to be increased to 97% are established. It is shown that the nonuniform generation of extended defects, which penetrate the active region of the light-emitting diodes as the structures degrade upon local current overheating, reduces the integrated emission intensitymore » but does not affect the relative intensity of diode emission in the UV (370 nm) and visible (550 nm) spectral ranges.« less

Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

NASA Astrophysics Data System (ADS)

Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

2012-12-01

Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

Luminescent properties of Eu{sup 2+}-doped BaGdF{sub 5} glass ceramics a potential blue phosphor for ultra-violet light-emitting diode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Weihuan; Zhang, Yuepin, E-mail: zhangyuepin@nbu.edu.cn; Ouyang, Shaoye

2015-01-14

Eu{sup 2+} doped transparent oxyfluoride glass ceramics containing BaGdF{sub 5} nanocrystals were successfully fabricated by melt-quenching technique under a reductive atmosphere. The structure of the glass and glass ceramics were investigated by differential scanning calorimetry, X-ray diffraction (XRD), and transmission electron microscopy (TEM). The luminescent properties were investigated by transmission, excitation, and emission spectra. The decay time of the Gd{sup 3+} ions at 312 nm excited with 275 nm were also investigated. The results of XRD and TEM indicated the existence of BaGdF5 nanocrystals in the transparent glass ceramics. The excitation spectra of Eu{sup 2+} doped glass ceramics showed an excellent overlapmore » with the main emission region of an ultraviolet light-emitting diode (UV-LED). Compared with the as-made glass, the emission of glass ceramics is much stronger by a factor of increasing energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions, the energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions was discussed. In addition, the chromaticity coordinates of glass and glass ceramics specimens were also discussed, which indicated that the Eu{sup 2+} doped BaGdF{sub 5} glass ceramics may be used as a potential blue-emitting phosphor for UV-LED.« less

Lighting theory and luminous characteristics of white light-emitting diodes

NASA Astrophysics Data System (ADS)

Uchida, Yuji; Taguchi, Tsunemasa

2005-12-01

A near-ultraviolet (UV)-based white light-emitting diode (LED) lighting system linked with a semiconductor InGaN LED and compound phosphors for general lighting applications is proposed. We have developed for the first time a novel type of high-color rendering index (Ra) white LED light source, which is composed of near-UV LED and multiphosphor materials showing orange (O), yellow (Y), green (G), and blue (B) emissions. The white LED shows the superior characteristics of luminous efficacy and high Ra to be about 40 lm/W and 93, respectively. Luminous and chromaticity characteristics, and their spectral distribution of the present white LED can be evaluated using the multipoint LED light source theory. It is revealed that the OYGB white LED can provide better irradiance properties than that of conventional white LEDs. Near-UV white LED technologies, in conjunction with phosphor blends, can offer superior color uniformity, high Ra, and excellent light quality. Consequently we are carrying out a "white LEDs for medical applications" program in the second phase of this national project from 2004 to 2009.

Seeing High Velocity Clouds and Turbulent Mixing Layers in the Ultraviolet: Predictions from Hydrodynamic Simulations

NASA Astrophysics Data System (ADS)

Shelton, Robin L.

2018-06-01

High velocity clouds (HVCs) and turbulent mixing layers (TMLs) emit light across a wide range of wavelengths. In order to aid in the detection of their ultraviolet emission, we predict the UV emission line intensities emitted by C II, C III, C IV, N II, N III, N IV, N V, O III, O IV, O V, O VI, Si II, Si III, and Si IV in a variety of simulated HVCs and TMLs. These predictions are based on detailed hydrodynamic simulations made with the FLASH code and employing non-equilibrium ionization calculations for carbon, nitrogen, oxygen, and silicon. The results are compared with FUSE and SPEAR/FIMS observations and with predictions from other models of hot/cool interfaces. We also present methods for scaling the results so that they can be applied to more or less dense environments.

Optically pumped cerium-doped LiSrAlF{sub 6} and LiCaAlF{sub 6}

DOEpatents

Marshall, C.D.; Payne, S.A.; Krupke, W.F.

1996-05-14

Ce{sup 3+}-doped LiSrAlF{sub 6} crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF{sub 6} with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF{sub 6} type of chemical formula, e.g. Ce-doped LiCaAlF{sub 6} and LiSrGaF{sub 6}, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF{sub 6} laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator. 10 figs.

Optically pumped cerium-doped LiSrAlF.sub.6 and LiCaAlF.sub.6

DOEpatents

Marshall, Christopher D.; Payne, Stephen A.; Krupke, William F.

1996-01-01

Ce.sup.3+ -doped LiSrAlF.sub.6 crystals are pumped by ultraviolet light which is polarized along the c axis of the crystals to effectively energize the laser system. In one embodiment, the polarized fourth harmonic light output from a conventional Nd:YAG laser operating at 266 nm is arranged to pump Ce:LiSrAlF.sub.6 with the pump light polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 crystal may be placed in a laser cavity for generating tunable coherent ultraviolet radiation in the range of 280-320 nm. Additionally, Ce-doped crystals possessing the LiSrAlF.sub.6 type of chemical formula, e.g. Ce-doped LiCaAlF.sub.6 and LiSrGaF.sub.6, can be used. Alternative pump sources include an ultraviolet-capable krypton or argon laser, or ultraviolet emitting flashlamps. The polarization of the pump light will impact operation. The laser system will operate efficiently when light in the 280-320 nm gain region is injected or recirculated in the system such that the beam is also polarized along the c axis of the crystal. The Ce:LiSrAlF.sub.6 laser system can be configured to generate ultrashort pulses, and it may be used to pump other devices, such as an optical parametric oscillator.

Saturn Apollo Program

NASA Image and Video Library

1972-04-16

The sixth marned lunar landing mission, the Apollo 16 (SA-511), carrying three astronauts: Mission commander John W. Young, Command Module pilot Thomas K. Mattingly II, and Lunar Module pilot Charles M. Duke, lifted off on April 16, 1972. The Apollo 16 continued the broad-scale geological, geochemical, and geophysical mapping of the Moon's crust, begun by the Apollo 15, from lunar orbit. This mission marked the first use of the Moon as an astronomical observatory by using the ultraviolet camera/spectrograph. It photographed ultraviolet light emitted by Earth and other celestial objects. The Lunar Roving Vehicle was also used. The mission ended on April 27, 1972.

Disinfection of Spacecraft Potable Water Systems by Photocatalytic Oxidation Using UV-A Light Emitting Diodes

NASA Technical Reports Server (NTRS)

Birmele, Michele N.; O'Neal, Jeremy A.; Roberts, Michael S.

2011-01-01

Ultraviolet (UV) light has long been used in terrestrial water treatment systems for photodisinfection and the removal of organic compounds by several processes including photoadsorption, photolysis, and photocatalytic oxidation/reduction. Despite its effectiveness for water treatment, UV has not been explored for spacecraft applications because of concerns about the safety and reliability of mercury-containing UV lamps. However, recent advances in ultraviolet light emitting diodes (UV LEDs) have enabled the utilization of nanomaterials that possess the appropriate optical properties for the manufacture of LEDs capable of producing monochromatic light at germicidal wavelengths. This report describes the testing of a commercial-off-the-shelf, high power Nichia UV-A LED (250mW A365nnJ for the excitation of titanium dioxide as a point-of-use (POD) disinfection device in a potable water system. The combination of an immobilized, high surface area photocatalyst with a UV-A LED is promising for potable water system disinfection since toxic chemicals and resupply requirements are reduced. No additional consumables like chemical biocides, absorption columns, or filters are required to disinfect and/or remove potentially toxic disinfectants from the potable water prior to use. Experiments were conducted in a static test stand consisting of a polypropylene microtiter plate containing 3mm glass balls coated with titanium dioxide. Wells filled with water were exposed to ultraviolet light from an actively-cooled UV-A LED positioned above each well and inoculated with six individual challenge microorganisms recovered from the International Space Station (ISS): Burkholderia cepacia, Cupriavidus metallidurans, Methylobacterium fujisawaense, Pseudomonas aeruginosa, Sphingomonas paucimobilis and Wautersia basilensis. Exposure to the Nichia UV-A LED with photocatalytic oxidation resulted in a complete (>7-log) reduction of each challenge bacteria population in <180 minutes of contact time. With continued advances in the design and manufacture of UV-A LEDs and semi-conducting photocatalysts, LED activated photochemical process technology promises to extend its application to spacecraft environmental systems.

Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chae, S.W.; Yoon, S.K.; Kwak, J.S.

2006-05-15

We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi(10 nm)/Au(10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99x10{sup -4} to 2.54x10{sup -4} {omega} cm{sup 2}, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaN/GaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance ofmore » the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p-Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.« less

Light absorption of organic aerosol from pyrolysis of corn stalk

NASA Astrophysics Data System (ADS)

Li, Xinghua; Chen, Yanju; Bond, Tami C.

2016-11-01

Organic aerosol (OA) can absorb solar radiation in the low-visible and ultra-violet wavelengths thereby modifying radiative forcing. Agricultural waste burning emits a large quantity of organic carbon in many developing countries. In this work, we improved the extraction and analysis method developed by Chen and Bond, and extended the spectral range of OC absorption. We examined light absorbing properties of primary OA from pyrolysis of corn stalk, which is a major type of agricultural wastes. Light absorption of bulk liquid extracts of OA was measured using a UV-vis recording spectrophotometer. OA can be extracted by methanol at 95%, close to full extent, and shows polar character. Light absorption of organic aerosol has strong spectral dependence (Absorption Ångström exponent = 7.7) and is not negligible at ultra-violet and low-visible regions. Higher pyrolysis temperature produced OA with higher absorption. Imaginary refractive index of organic aerosol (kOA) is 0.041 at 400 nm wavelength and 0.005 at 550 nm wavelength, respectively.

Rapid microwave-assisted synthesis of highly luminescent nitrogen-doped carbon dots for white light-emitting diodes

NASA Astrophysics Data System (ADS)

Wang, Yaling; Zheng, Jingxia; Wang, Junli; Yang, Yongzhen; Liu, Xuguang

2017-11-01

Highly luminescent nitrogen-doped carbon dots (N-CDs) were synthesized rapidly by one-step microwave-assisted hydrothermal method using citric acid as carbon source and ethylenediamine as dopant. The influences of reaction temperature, reaction time and raw material ratio on the fluorescence performance of N-CDs were investigated. Then N-CDs with the highest quantum yield were selected as fluorescent materials for fabricating white light-emitting diodes (LEDs). Highly luminescent N-CDs with the quantum yield of 75.96% and blue-to-red spectral composition of 51.48% were obtained at the conditions of 180 °C, 8 min and the molar ratio of citric acid to ethylenediamine 2:1. As-prepared highly luminescent N-CDs have an average size of 6.06 nm, possess extensive oxygen- and nitrogen-containing functional groups on their surface, and exhibit strong absorption in ultraviolet region. White LEDs based on the highly luminescent N-CDs emit warm white light with color coordinates of (0.42, 0.40) and correlated color temperature of 3416 K.

Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

2014-07-21

We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward andmore » seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.« less

Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

PubMed

Lee, Byeong Ryong; Kim, Tae Geun

2016-06-01

This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

DOE PAGES

Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; ...

2017-09-05

ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

Simulation of photons from plasmas for the applications to display devices

NASA Astrophysics Data System (ADS)

Lee, Hae June; Yoon, Hyun Jin; Lee, Jae Koo

2007-07-01

Numerical modeling of the photon transport of the ultraviolet (UV) and the visible lights are presented for plasma based display devices. The transport of UV lights which undergo resonance trapping by ground state atoms is solved by using the Holstein equation. After the UV lights are transformed to visible lights at the phosphor surfaces, the visible lights experience complicated traces inside the cell and finally are emitted toward the viewing window after having some power loss within the cell. A three-dimensional ray trace of the visible lights is calculated with a radiosity model. These simulations for the photons strengthen plasma discharge modeling for the application to display devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Djavid, Mehrdad; Mi, Zetian, E-mail: zetian.mi@mcgill.ca

The performance of conventional AlGaN deep ultraviolet light emitting diodes has been limited by the extremely low light extraction efficiency (<10%), due to the unique transverse magnetic (TM) polarized light emission. Here, we show that, by exploiting the lateral side emission, the extraction efficiency of TM polarized light can be significantly enhanced in AlGaN nanowire structures. Using the three-dimensional finite-difference time domain simulation, we demonstrate that the nanowire structures can be designed to inhibit the emission of guided modes and redirect trapped light into radiated modes. A light extraction efficiency of more than 70% can, in principle, be achieved bymore » carefully optimizing the nanowire size, nanowire spacing, and p-GaN thickness.« less

[LED lights in dermatology].

PubMed

Noé, C; Pelletier-Aouizerate, M; Cartier, H

2017-04-01

The use in dermatology of light-emitting diodes (LEDs) continues to be surrounded by controversy. This is due mainly to poor knowledge of the physicochemical phases of a wide range of devices that are difficult to compare to one another, and also to divergences between irrefutable published evidence either at the level of in vitro studies or at the cellular level, and discordant clinical results in a variety of different indications: rejuvenation, acne, wound healing, leg ulcers, and cutaneous inflammatory or autoimmune processes. Therapeutic LEDs can emit wavelengths ranging from the ultraviolet, through visible light, to the near infrared (247-1300 nm), but only certain bands have so far demonstrated any real value. We feel certain that if this article remains factual, then readers will have a different, or at least more nuanced, opinion concerning the use of such LED devices in dermatology. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

Environmental radiation detection via thermoluminescence

DOEpatents

Miller, Steven D.

1993-01-01

The method and apparatus of the present invention relate to cryogenically cooling a thermoluminescent material, exposing it to a low level of radiation (less than about 1 R) while it is at the cooled temperature, warming the thermoluminescent material to "room temperature", and counting the photons emitted during heating. Sufficient sensitivity is achieved without exposing the thermoluminescent material to ultraviolet light thereby simplifying the measurements.

Environmental radiation detection via thermoluminescence

DOEpatents

Miller, S.D.

1993-03-23

The method and apparatus of the present invention relate to cryogenically cooling a thermoluminescent material, exposing it to a low level of radiation (less than about 1 R) while it is at the cooled temperature, warming the thermoluminescent material to room temperature'' and counting the photons emitted during heating. Sufficient sensitivity is achieved without exposing the thermoluminescent material to ultraviolet light thereby simplifying the measurements.

Polarization of III-nitride blue and ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Shakya, J.; Knabe, K.; Kim, K. H.; Li, J.; Lin, J. Y.; Jiang, H. X.

2005-02-01

Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaN/GaN quantum-well (QW) blue LEDs (λ'=458nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333nm). For the case of edge emission in blue LEDs, a ratio (r=I⊥/I ‖) of about 1.8:1 was observed between the EL intensities with polarization E ⊥c (TE mode) and E ‖c (TM mode), which corresponds to a degree of polarization ˜0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ˜0.4. This is due to the fact that the degree of polarization of the bandedge emission of the AlxInyGa1-x -yN active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.

NASA Ames UV-LED Poster Overview

NASA Technical Reports Server (NTRS)

Jaroux, Belgacem Amar

2015-01-01

UV-LED is a small satellite technology demonstration payload being flown on the Saudisat-4 spacecraft that is demonstrating non-contacting charge control of an isolated or floating mass using new solid-state ultra-violet light emitting diodes (UV-LEDs). Integrated to the rest of the spacecraft and launched on a Dnepr in June 19, 2014, the project is a collaboration between the NASA Ames Research Center (ARC), Stanford University, and King Abdulaziz City for Science and Technology (KACST). Beginning with its commissioning in December, 2015, the data collected by UV-LED have validated a novel method of charge control that will improve the performance of drag-free spacecraft allowing for concurrent science collection during charge management operations as well as reduce the mass, power and volume required while increasing lifetime and reliability of a charge management subsystem. UV-LED continues to operate, exploring new concepts in non-contacting charge control and collecting data crucial to understanding the lifetime of ultra-violet light emitting diodes in space. These improvements are crucial to the success of ground breaking missions such as LISA and BBO, and demonstrates the ability of low cost small satellite missions to provide technological advances that far exceed mission costs.

Modularized and water-cooled photo-catalyst cleaning devices for aquaponics based on ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Yang, Henglong; Lung, Louis; Wei, Yu-Chien; Huang, Yi-Bo; Chen, Zi-Yu; Chou, Yu-Yang; Lin, Anne-Chin

2017-08-01

The feasibility of applying ultraviolet light-emitting diodes (UV-LED's) as triggering sources of photo-catalyst based on titanium dioxide (TiO2) nano-coating specifically for water-cleaning process in an aquaponics system was designed and proposed. The aquaponics system is a modern farming system to integrate aquaculture and hydroponics into a single system to establish an environmental-friendly and lower-cost method for farming fish and vegetable all together in urban area. Water treatment in an aquaponics system is crucial to avoid mutual contamination. we proposed a modularized watercleaning device composed of all commercially available components and parts to eliminate organic contaminants by using UV-LED's for TiO2 photo-catalyst reaction. This water-cleaning module consisted of two coaxial hollowed cylindrical pipes can be submerged completely in water for water treatment and cooling UV-LED's. The temperature of the UV-LED after proper thermal management can be reduced about 16% to maintain the optimal operation condition. Our preliminary experimental result by using Methylene Blue solution to simulate organic contaminants indicated that TiO2 photo-catalyst triggered by UV-LED's can effectively decompose organic compound and decolor Methylene Blue solution.

Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

PubMed

Lee, Byeong Ryong; Lee, Jae Hoon; Kim, Kyeong Heon; Kim, Hee-Dong; Kim, Tae Geun

2014-12-01

We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.9 Ω/Ω and a contact resistance of 1.97 x 10(-1) Ω x cm2, together with a high transmittance of 84.1% at 380 nm. The contact resistance of these films should be further reduced to fully utilize the feature of the electrode scheme proposed in this work, but the current result suggests its potential use as a transparent conductive electrode for ultraviolet light-emitting diodes.

Research of green emitting rare-earth doped materials as potential quantum-cutter

NASA Astrophysics Data System (ADS)

Moine, Bernard; Beauzamy, Lena; Gredin, Patrick; Wallez, Gilles; Labeguerie, Jessica

2008-03-01

Because the energy of vacuum ultraviolet (VUV) photons emitted by xenon plasma discharge is more than twice that of visible photons, quantum cutting appears to be a promising process in rare-earth doped materials in order to obtain efficient phosphors for mercury free lighting devices as well as for plasma display panels. With an aim of application, it is important to take into account the emitting color of the developed new phosphors. Most of the time, this leads to use systems with at least two kinds of rare earth ions: one of them playing the role of energy sensitizer, and the other one being in charge of emitting the light of the suitable color. We focus our attention on green rare-earth doped materials. In order to get very efficient phosphors, it is not only necessary to get the highest possible quantum yield, but also to have a material characterized by a strong absorption in the VUV range. Borate and fluoride matrices doped with Dy 3+/Tb 3+ couples of ions are selected according to the position of the 5d band of dysprosium as green emitters.

Alternating Current Driven Organic Light Emitting Diodes Using Lithium Fluoride Insulating Layers

PubMed Central

Liu, Shang-Yi; Chang, Jung-Hung; -Wen Wu, I.; Wu, Chih-I

2014-01-01

We demonstrate an alternating current (AC)-driven organic light emitting diodes (OLED) with lithium fluoride (LiF) insulating layers fabricated using simple thermal evaporation. Thermal evaporated LiF provides high stability and excellent capacitance for insulating layers in AC devices. The device requires a relatively low turn-on voltage of 7.1 V with maximum luminance of 87 cd/m2 obtained at 10 kHz and 15 Vrms. Ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy are employed simultaneously to examine the electronic band structure of the materials in AC-driven OLED and to elucidate the operating mechanism, optical properties and electrical characteristics. The time-resolved luminance is also used to verify the device performance when driven by AC voltage. PMID:25523436

Surface plasmon coupling for suppressing p-GaN absorption and TM-polarized emission in a deep-UV light-emitting diode.

PubMed

Kuo, Yang; Su, Chia-Ying; Hsieh, Chieh; Chang, Wen-Yen; Huang, Chu-An; Kiang, Yean-Woei; Yang, C C

2015-09-15

The radiated power enhancement (suppression) of an in- (out-of-) plane-oriented radiating dipole at a desired emission wavelength in the deep-ultraviolet (UV) range when it is coupled with a surface plasmon (SP) resonance mode induced on a nearby Al nanoparticle (NP) is demonstrated. Also, it is found that the enhanced radiated power propagates mainly in the direction from the Al NP toward the dipole. Such SP coupling behaviors can be used for suppressing the transverse-magnetic (TM)-polarized emission, enhancing the transverse-electric-polarized emission, and reducing the UV absorption of the p-GaN layer in an AlGaN-based deep-UV light-emitting diode by embedding a sphere-like Al NP in its p-AlGaN layer.

LDEF active optical system components experiment

NASA Technical Reports Server (NTRS)

Blue, M. D.

1992-01-01

A preliminary report on the Active Optical System Components Experiment is presented. This experiment contained 136 components in a six inch deep tray including lasers, infrared detectors and arrays, ultraviolet light detectors, light-emitting diodes, a light modulator, flash lamps, optical filters, glasses, and samples of surface finishes. Thermal, mechanical, and structural considerations leading to the design of the tray hardware are discussed. In general, changes in the retested component characteristics appear as much related to the passage of time as to the effects of the space environment, but organic materials, multilayer optical interference filters, and extreme-infrared reflectivity of black paints show unexpected changes.

Engineered core/shell quantum dots as phosphors for solid-state lighting

DOE Office of Scientific and Technical Information (OSTI.GOV)

Klimov, Victor Ivanovich; Pietryga, Jeffrey Michael; McDaniel, Hunter

2015-01-14

Light-emitting diodes (LEDs) for solid state light ing (SSL) typically combine a blue or near- ultraviolet drive LED with one or more dow nconverting phosphors to produce “white” light. Further advances in both efficiency and wh ite-light quality will re quire new phosphors with narrow-band, highly efficient emission, particul arly in the red. A team led by principal investigator Dr. Victor Klim ov of Los Alamos National Labo ratory proposes to develop engineered semiconductor nanocrystal quantum dots (QDs) that combine optimal luminescent properties with long-term stability under ty pical downconverting conditions to enable new performance levels in SSL. The whitemore » LED phosphor industry is estimated to have sales of roughly $400 million in 2018 and would significantly benefit from the development of bright and narrow red-emitting QD phosphors because they woul d enable warmer whites without wasting energy by emission of light beyond the response of the human eye. In order to capitalize on the market opportunity, the LANL team is partnering with a local company called UbiQD that will facilitate US manufacturing.« less

Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

PubMed

Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

2018-06-01

The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

Peeking in on the Neighbors

NASA Technical Reports Server (NTRS)

2008-01-01

You can see new things through different colored glasses. The Swift observatory, primarily a gamma-ray burst hunter, has many different ways to view the Universe, including an ultraviolet telescope, called UVOT, designed to study the afterglows of GRBs. But GRBs occur every few days, so there's often times between bursts that the Swift telescopes can be doing other useful things. The image above is an image in ultraviolet light of M33, a small companion galaxy of the Andromeda galaxy, M31. The UVOT mosaic shown above is composed of 13 individual snapshot observations (lasting about 20 minutes each) in three different filters, and covers the entire disk of the galaxy. The resulting image is one of the best ultraviolet observations of any galaxy obtained to date. The ultraviolet radiation is mostly emitted by young massive stars, so this image helps astronomers understand where young massive stars form, and where they go to die.

Investigation of a BeO-based optically stimulated luminescence dosemeter.

PubMed

Sommer, M; Henniger, J

2006-01-01

The optical sensitivity of BeO-based luminophors has been well-known for many years. The optical stimulation of BeO with blue light is most effective. Then the dosemeters emit luminescent light in the ultraviolet-range around 325 nm. Matched on these facts a simple optically stimulated luminescence (OSL) treatment has been developed. Intense blue light-emitting diodes are used for cw-stimulation. A Hamamatsu solar blind photomultiplier detects the OSL-light. Good separation of both spectral ranges by optical filters is very important. The dosemeter has a linear dose response between approximately 20 muGy and >10 Gy. It was suggested, that a modification of stimulation conditions would allow measurements down to 1 muGy. Fading, photon energy dependence and reproducibility of OSL-signal correspond well with requirements to clinical and personal dosemeters. In addition, basic questions of the OSL-process in BeO have been investigated. A relevant point of interest was the dependency of the OSL-signal on stimulation power.

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Reversible photoinduced spectral change in Eu2O3 at room temperature

NASA Astrophysics Data System (ADS)

Mochizuki, Shosuke; Nakanishi, Tauto; Suzuki, Yuya; Ishi, Kimihiro

2001-12-01

When Eu2O3 powder compact and film are irradiated with ultraviolet (UV) laser light in a vacuum, their photoluminescence (PL) spectra change from a red sharp-line structure to a white broad band, which can be clearly seen with the naked eye. After removing the UV laser light, the white PL continues for more than several months at room temperature under room light, in spite of any changes of atmosphere. By irradiating with the same UV laser light at room temperature under O2 gas atmosphere, the original red PL state reappears. Such a reversible phenomenon may well yield materials for white-light-emitting devices and erasable optical storage.

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

DOE PAGES

Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

2016-11-09

Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

300-mW narrow-linewidth deep-ultraviolet light generation at 193 nm by frequency mixing between Yb-hybrid and Er-fiber lasers.

PubMed

Xuan, Hongwen; Zhao, Zhigang; Igarashi, Hironori; Ito, Shinji; Kakizaki, Kouji; Kobayashi, Yohei

2015-04-20

A narrow-linewidth, high average power deep-ultraviolet (DUV) coherent laser emitting at 193 nm is demonstrated by frequency mixing a Yb-hybrid laser with an Er-fiber laser. The Yb-hybrid laser consists of Yb-fiber lasers and an Yb:YAG amplifier. The average output power of the 193 nm laser is 310 mW at 6 kHz, which corresponds to a pulse energy of 51 μJ. To the best of our knowledge, this is the highest average power and pulse energy ever reported for a narrow-linewidth 193 nm light generated by a combination of solid-state and fiber lasers with frequency mixing. We believe this laser will be beneficial for the application of interference lithography by seeding an injection-locking ArF eximer laser.

Biomimetic Moth-eye Nanofabrication: Enhanced Antireflection with Superior Self-cleaning Characteristic.

PubMed

Sun, Jingyao; Wang, Xiaobing; Wu, Jinghua; Jiang, Chong; Shen, Jingjing; Cooper, Merideth A; Zheng, Xiuting; Liu, Ying; Yang, Zhaogang; Wu, Daming

2018-04-03

Sub-wavelength antireflection moth-eye structures were fabricated with Nickel mold using Roll-to-Plate (R2P) ultraviolet nanoimprint lithography (UV-NIL) on transparent polycarbonate (PC) substrates. Samples with well replicated patterns established an average reflection of 1.21% in the visible light range, 380 to 760 nm, at normal incidence. An excellent antireflection property of a wide range of incidence angles was shown with the average reflection below 4% at 50°. Compared with the unpatterned ultraviolet-curable resin coating, the resulting sub-wavelength moth-eye structure also exhibited increased hydrophobicity in addition to antireflection. This R2P method is especially suitable for large-area product preparation and the biomimetic moth-eye structure with multiple performances can be applied to optical devices such as display screens, solar cells, or light emitting diodes.

Effects of ultraviolet light emitting diodes (LEDs) on microbial and enzyme inactivation of apple juice.

PubMed

Akgün, Merve Pelvan; Ünlütürk, Sevcan

2017-11-02

In this study, the effects of Ultraviolet light-emitting diodes (UV-LEDs) on the inactivation of E. coli K12 (ATCC 25253), an indicator organism of E. coli O157:H7, and polyphneoloxidase (PPO) in cloudy apple juice (CAJ) were investigated. The clear (AJ) and cloudy apple juice were exposed to UV rays for 40min by using a UV device composed of four UV-LEDs with peak emissions at 254 and 280nm and coupled emissions as follows: 254/365, 254/405, 280/365, 280/405 and 254/280/365/405nm. UV-LEDs at 254nm achieved 1.6±0.1 log 10 CFU/mL inactivation of E. coli K12 at UV dose of 707.2mJ/cm 2 . The highest inactivation of E. coli K12 (2.0±0.1log 10 CFU/mL and 2.0±0.4log 10 CFU/mL) was achieved when the cloudy apple juice was treated with both 280nm and 280/365nm UV-LEDs. For clear apple juice the highest inactivation 4.4log 10 CFU/mL obtained for E. coli K12 was achieved using 4 lamps emitting light at 280nm for 40min exposure time. For the same treatment time, the experiments using a combination of lamps emitting light at 280 and 365nm (2lamp/2lamp) were resulted in 3.9±0.2log 10 CFU/mL reductions. UV-A and UV-C rays in combination showed a better inactivation effect on PPO than UV-C rays used separately. Residual activity of PPO in CAJ was reduced to 32.58% when treated with UV-LED in combination of UV-C (280nm) and UV-A (365nm) rays. Additionally, the total color change (ΔE) of CAJ subjected to combined UV-LED irradiation at 280/365nm was the lowest compared to other studied processing conditions. This study provides key implications for the future application of UV-LEDs to fruit juice pasteurization. Copyright © 2017 Elsevier B.V. All rights reserved.

Impact assessment of energy-efficient lighting in patients with lupus erythematosus: a pilot study.

PubMed

Fenton, L; Dawe, R; Ibbotson, S; Ferguson, J; Silburn, S; Moseley, H

2014-03-01

Patients with lupus erythematosus (LE) are often abnormally photosensitive. Ultraviolet (UV) exposure can not only induce cutaneous lesions but may also contribute to systemic flares and disease progression. Various forms of energy-efficient lighting have been shown to emit UV radiation. To determine the effects of these emissions on individuals with LE. This assessment investigated cutaneous responses to repeated exposures from three types of lighting: compact fluorescent lamp (CFL), light-emitting diode (LED) and energy-efficient halogen (EEH). The subjects were 15 patients with LE and a control group of five healthy volunteers. No cutaneous LE lesions were induced by any of the light sources. Delayed skin erythema was induced at the site of CFL irradiation in six of the 15 patients with LE and two of the five healthy subjects. Erythema was increased in severity and more persistent in patients with LE. One patient with LE produced a positive delayed erythema to the EEH. A single patient with LE produced immediate abnormal erythemal responses to the CFL, LED and EEH. Further investigation revealed that this patient also had solar urticaria. All other subjects had negative responses to LED exposure. Compact fluorescent lamps emit UV that can induce skin erythema in both individuals with LE and healthy individuals when situated in close proximity. However, this occurs to a greater extent and is more persistent in patients with LE. EEHs emit UVA that can induce erythema in patients with LE. LEDs provide a safer alternative light source without risk of UV exposure. © 2013 British Association of Dermatologists.

Saturn Apollo Program

NASA Image and Video Library

1972-04-16

The sixth manned lunar landing mission, the Apollo 16 (SA-511), carrying three astronauts: Mission Commander John W. Young, Command Module pilot Thomas K. Mattingly II, and Lunar Module pilot Charles M. Duke, lifted off on April 16, 1972. The Apollo 16 mission continued the broad-scale geological, geochemical, and geophysical mapping of the Moon’s crust, begun by the Apollo 15, from lunar orbit. This mission marked the first use of the Moon as an astronomical observatory by using the ultraviolet camera/spectrograph which photographed ultraviolet light emitted by Earth and other celestial objects. The Lunar Roving Vehicle, developed by the Marshall Space Flight Center, was also used. The mission ended on April 27, 1972.

Dynamics of Chemical Degradation in Water Using Photocatalytic Reactions in an Ultraviolet Light Emitting Diode Reactor

DTIC Science & Technology

2017-09-14

one such study, AOPs were investigated for the removal of organophosphorus pesticides in wastewater by selecting and optimizing oxidation processes...micropollutants (primarily pharmaceuticals, personal care products, and pesticides ) in four 64 different river water sources (Colorado River, Passaic...the National Institutes of Health PubChem data repository (National Institutes of Health 2016). Additional chemical properties were also selected for

The Use of Ultra-Violet (UV) Light Emitting Diodes (LEDS) in an Advanced Oxidation Process (AOP) with Brilliant Blue FCF as an Indicator

DTIC Science & Technology

2015-03-26

by low, direct current voltage, which are consistent with portable power sources such as batteries or photovoltaic cells (Crystal IS 2013...of Methylene Blue Adsorption on Power Output .................23 vii UV LED Quartz Lens Adsorption Experiment...29 Effect of Methylene Blue Adsorption on Power Output ............................................29 Figure 5 - Percent reduction of

Single shot polarization characterization of XUV FEL pulses from crossed polarized undulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ferrari, E.; Allaria, E.; Buck, J.

Polarization control is a key feature of light generated by short-wavelength free-electron lasers. In this work, we report the first experimental characterization of the polarization properties of an extreme ultraviolet high gain free-electron laser operated with crossed polarized undulators. We research the average degree of polarization and the shot-to-shot stability and we analyze aspects such as existing possibilities for controlling and switching the polarization state of the emitted light. The results are in agreement with predictions based on Gaussian beams propagation.

Single shot polarization characterization of XUV FEL pulses from crossed polarized undulators

DOE PAGES

Ferrari, E.; Allaria, E.; Buck, J.; ...

2015-08-28

Polarization control is a key feature of light generated by short-wavelength free-electron lasers. In this work, we report the first experimental characterization of the polarization properties of an extreme ultraviolet high gain free-electron laser operated with crossed polarized undulators. We research the average degree of polarization and the shot-to-shot stability and we analyze aspects such as existing possibilities for controlling and switching the polarization state of the emitted light. The results are in agreement with predictions based on Gaussian beams propagation.

Fabrication of silver nanowires and metal oxide composite transparent electrodes and their application in UV light-emitting diodes

NASA Astrophysics Data System (ADS)

Yan, Xingzhen; Ma, Jiangang; Xu, Haiyang; Wang, Chunliang; Liu, Yichun

2016-08-01

In this paper, we prepared the silver nanowires (AgNWs)/aluminum-doped zinc oxide (AZO) composite transparent conducting electrodes for n-ZnO/p-GaN heterojunction light emitting-diodes (LEDs) by drop casting AgNW networks and subsequent atomic layer deposition (ALD) of AZO at 150 °C. The contact resistances between AgNWs were dramatically reduced by pre-annealing in the vacuum chamber before the ALD of AZO. In this case, AZO works not only as the conformal passivation layer that protects AgNWs from oxidation, but also as the binding material that improves AgNWs adhesion to substrates. Due to the localized surface plasmons (LSPs) of the AgNWs resonant coupling with the ultraviolet (UV) light emission from the LEDs, a higher UV light extracting efficiency is achieved from LEDs with the AgNWs/AZO composite electrodes in comparison with the conventional AZO electrodes. Additionally, the antireflective nature of random AgNW networks in the composite electrodes caused a broad output light angular distribution, which could be of benefit to certain optoelectronic devices like LEDs and solar cells.

The possible ocular hazards of LED dental illumination applications.

PubMed

Stamatacos, Catherine; Harrison, Janet L

2014-04-01

The use of high-intensity illumination via Light-Emitting Diode (LED) headlamps is gaining in popularity with dentists and student dentists. Practitioners are using LED headlamps together with magnifying loupes, overhead LED illumination and fiber-optic dental handpieces for long periods of time. Although most manufacturers of these LED illuminators advertise that their devices emit "white" light, these still consist of two spectral bands - the blue spectral band, with its peak at 445 nm, and the green with its peak at 555 nm. While manufacturers suggest that their devices emit "white" light, spectral components of LED lights from different companies are significantly different. Dental headlamp manufacturers strive to create a white LED, and they advertise that this type of light emitted from their product offers bright white-light illumination. However, the manufacturing of a white LED light is done through selection of a white LED-type based on the peak blue strength in combination with the green peak strength and thus creating a beam-forming optic, which determines the beam quality. Some LED illuminators have a strong blue-light component versus the green-light component. Blue-light is highly energized and is close in the color spectrum to ultraviolet-light. The hazards of retinal damage with the use of high-intensity blue-lights has been well-documented. There is limited research regarding the possible ocular hazards of usage of high-intensity illuminating LED devices. Furthermore, the authors have found little research, standards, or guidelines examining the possible safety issues regarding the unique dental practice setting consisting of the combined use of LED illumination systems. Another unexamined component is the effect of high-intensity light reflective glare and magnification back to the practitioner's eyes due to the use of water during dental procedures. Based on the result of Dr. Janet Harrison's observations of beginning dental students in a laboratory setting, the aim of this review is to raise awareness of the potential risk for eye damage when singular or combinations of LED illumination are used.

The possible ocular hazards of LED dental illumination applications.

PubMed

Stamatacos, Catherine; Harrison, Janet L

2013-01-01

The use of high-intensity illumination via Light-Emitting Diode (LED) headlamps is gaining in popularity with dentists and student dentists. Practitioners are using LED headlamps together with magnifying loupes, overhead LED illumination and fiber-optic dental handpieces for long periods of time. Although most manufacturers of these LED illuminators advertise that their devices emit "white" light, these still consist of two spectral bands--the blue spectral band, with its peak at 445 nm, and the green with its peak at 555 nm. While manufacturers suggest that their devices emit "white" light, spectral components of LED lights from different companies are significantly different. Dental headlamp manufacturers strive to create a white LED, and they advertise that this type of light emitted from their product offers bright white-light illumination. However, the manufacturing of a white LED light is done through selection of a white LED-type based on the peak blue strength in combination with the green peak strength and thus creating a beam-forming optic, which determines the beam quality. Some LED illuminators have a strong blue-light component versus the green-light component. Blue-light is highly energized and is close in the color spectrum to ultraviolet-light. The hazards of retinal damage with the use of high-intensity blue-lights has been well-documented. There is limited research regarding the possible ocular hazards of usage of high-intensity illuminating LED devices. Furthermore, the authors have found little research, standards, or guidelines examining the possible safety issues regarding the unique dental practice setting consisting of the combined use of LED illumination systems. Another unexamined component is the effect of high-intensity light reflective glare and magnification back to the practitioner's eyes due to the use of water during dental procedures. Based on the result of Dr. Janet Harrison's observations of beginning dental students in a laboratory setting, the aim of this review is to raise awareness of the potential risk for eye damage when singular or combinations of LED illumination are used.

A comparison of commercial light-emitting diode baited suction traps for surveillance of Culicoides in northern Europe.

PubMed

Hope, Andrew; Gubbins, Simon; Sanders, Christopher; Denison, Eric; Barber, James; Stubbins, Francesca; Baylis, Matthew; Carpenter, Simon

2015-04-22

The response of Culicoides biting midges (Diptera: Ceratopogonidae) to artificial light sources has led to the use of light-suction traps in surveillance programmes. Recent integration of light emitting diodes (LED) in traps improves flexibility in trapping through reduced power requirements and also allows the wavelength of light used for trapping to be customized. This study investigates the responses of Culicoides to LED light-suction traps emitting different wavelengths of light to make recommendations for use in surveillance. The abundance and diversity of Culicoides collected using commercially available traps fitted with Light Emitting Diode (LED) platforms emitting ultraviolet (UV) (390 nm wavelength), blue (430 nm), green (570 nm), yellow (590 nm), red (660 nm) or white light (425 nm - 750 nm with peaks at 450 nm and 580 nm) were compared. A Centre for Disease Control (CDC) UV light-suction trap was also included within the experimental design which was fitted with a 4 watt UV tube (320-420 nm). Generalised linear models with negative binomial error structure and log-link function were used to compare trap abundance according to LED colour, meteorological conditions and seasonality. The experiment was conducted over 49 nights with 42,766 Culicoides caught in 329 collections. Culicoides obsoletus Meigen and Culicoides scoticus Downes and Kettle responded indiscriminately to all wavelengths of LED used with the exception of red which was significantly less attractive. In contrast, Culicoides dewulfi Goetghebuer and Culicoides pulicaris Linnaeus were found in significantly greater numbers in the green LED trap than in the UV LED trap. The LED traps collected significantly fewer Culicoides than the standard CDC UV light-suction trap. Catches of Culicoides were reduced in LED traps when compared to the standard CDC UV trap, however, their reduced power requirement and small size fulfils a requirement for trapping in logistically challenging areas or where many traps are deployed at a single site. Future work should combine light wavelengths to improve trapping sensitivity and potentially enable direct comparisons with collections from hosts, although this may ultimately require different forms of baits to be developed.

Effect of AlInGaN barrier layers with various TMGa flows on optoelectronic characteristics of near UV light-emitting diodes grown by atmospheric pressure metalorganic vapor phase epitaxy

NASA Astrophysics Data System (ADS)

Fu, Yi-Keng; Lu, Yu-Hsuan; Jiang, Ren-Hao; Chen, Bo-Chun; Fang, Yen-Hsiang; Xuan, Rong; Su, Yan-Kuin; Lin, Chia-Feng; Chen, Jebb-Fang

2011-08-01

Near ultraviolet light-emitting diodes (LEDs) with quaternary AlInGaN quantum barriers (QBs) are grown by atmospheric pressure metalorganic vapor phase epitaxy. The indium mole fraction of AlInGaN QB could be enhanced as we increased the TMG flow rate. Both the wavelength shift in EL spectra and forward voltage at 20 mA current injection were reduced by using AlInGaN QB. Under 100 mA current injection, the LED output power with Al 0.089In 0.035Ga 0.876N QB can be enhanced by 15.9%, compared to LED with GaN QB. It should be attributed to a reduction of lattice mismatch induced polarization mismatch in the active layer.

High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography

PubMed Central

2016-01-01

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p-type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination. PMID:28066690

High-Power 365 nm UV LED Mercury Arc Lamp Replacement for Photochemistry and Chemical Photolithography.

PubMed

Hölz, K; Lietard, J; Somoza, M M

2017-01-03

Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p -type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination.

Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

NASA Astrophysics Data System (ADS)

Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

2017-08-01

A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Feng; Wang, Yaling; Miao, Yanqin

Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral compositionmore » of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.« less

Up-converted ultraviolet luminescence of Er3+:BaGd2ZnO5 phosphors for healthy illumination

NASA Astrophysics Data System (ADS)

Zhang, Ya; Cui, Qingzhi; Wang, Zhanyong; Liu, Gan; Tian, Tian; Xu, Jiayue

2016-09-01

Moderate level of exposure to the solar irradiation containing UV component is essential for health care. To incorporate the UV-emitting phosphors into the commercial YAG-based white light-emitting diode introduces the possibilities of healthy illumination to individuals' daily lives. 1 mol.% Er3+-doped BaGd2ZnO5 (BGZ) particles were synthesized via sol-gel method and efficient up-converted luminescence peaked at 380 nm was detected under 480 nm excitation. The mixed phosphors with varied mass ratio of Er3+:BGZ and Ce3+:YAG particles were encapsulated to form LEDs. The study of the LEDs indicated that the introduction of BGZ component favored the enhancement of color-rendering index and the neutralization of the white light emitting. The WLED with the BGZ/YAG ratio of 8:2 was recommendable for its excellent overall white light luminous performances and UV intensity of 84.55 mW/cm2. The UV illumination dose of the WLEDs with mixed YAG and BGZ was controllable by adjusting the ratio, the illumination distance and the illumination time. Er3+:BGZ phosphors are promising UVemitting phosphors for healthy indoor illumination.

Pulsed Ultraviolet Light Emitting Diodes for Advanced Oxidation of Tartrazine

DTIC Science & Technology

2015-03-26

a significantly lower amount of energy while lasting considerably longer than the conventional lamp . Recently, an experiment on AOP with a UV LED ...severe damage to these organs, resulting in death (OSHA, 2012). LEDs are promising alternatives for UV energy sources. Contrarily to mercury lamps ...Table 1 UV Lamp Properties Additionally, because LEDs interrupt the DNA of microorganisms without the introduction of added chemicals, there are

Ultraviolet Light Emitting Diode Optical Power Characterization

DTIC Science & Technology

2014-03-01

radicals and use the radicals to break down hazardous chemicals. The second project that will be referenced is the drinking water disinfection ...measurements to understand the voltage needed to maximize the UV LEDs performance for the disinfection of drinking water and the production of...way to produce safe drinking water is not only a priority of almost every residential community in the United States, but the Department of Defense

Reinventing a p-type doping process for stable ZnO light emitting devices

NASA Astrophysics Data System (ADS)

Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

2018-06-01

A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

2012-07-01

We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.

Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Kim, Hwankyo; Kim, Dae-Hyun; Seong, Tae-Yeon

2017-11-01

We investigated the electrical performance of near ultraviolet (NUV) (390 nm) light-emitting diodes (LEDs) fabricated with various semi-transparent Cr/ITO n-type contacts. It was shown that after annealing at 400 °C, Cr/ITO (10 nm/40 nm) contact was ohmic with a specific contact resistance of 9.8 × 10-4 Ωcm2. NUV AlGaN-based LEDs fabricated with different Cr/ITO (6-12 nm/40 nm) electrodes exhibited forward-bias voltages of 3.27-3.30 V at an injection current of 20 mA, which are similar to that of reference LED with Cr/Ni/Au (20 nm/25 nm/200 nm) electrode (3.29 V). The LEDs with the Cr/ITO electrodes gave series resistances of 10.69-11.98 Ω, while the series resistance is 10.84 Ohm for the reference LED. The transmittance of the Cr/ITO samples significantly improved when annealed at 400 °C. The transmittance (25.8-45.2% at 390 nm) of the annealed samples decreased with increasing Cr layer thickness. The LEDs with the Cr/ITO electrodes exhibited higher light output power than reference LED (with Cr/Ni/Au electrode). In particular, the LED with the Cr/ITO (12 nm/40 nm) electrode showed 9.3% higher light output power at 100 mA than reference LED. Based on the X-ray photoemission spectroscopy (XPS) and electrical results, the ohmic formation mechanism is described and discussed.

Luminescence in Ba2 Sr2 Al2 O7 :RE (RE = Tb(3) (+) ,Eu(3) (+) and Dy(3) (+) ) novel aluminate phosphors.

PubMed

Pardhi, S A; Panse, V R; Dhoble, S J

2016-09-01

The luminescence of novel rare earth (Tb(3) (+) , Eu(3) (+) and Dy(3) (+) )-activated Ba2 Sr2 Al2 O7 phosphors for solid-state lighting is presented. The aluminate phosphors were synthesized using a one-step combustion method. X-Ray diffraction, scanning electron microscopy and photoluminescence characterizations were performed to understand the mechanism of excitation and the corresponding emission in the as-prepared phosphor, as characterized the phase purity and microstructure. Improvements in the luminescence properties of the phosphors with rare earth concentration were observed. The phosphor hue could be tuned from blue, green and red by proper selection of rare earth ions in typical concentrations. Effective absorption in the near-ultraviolet region was observed, which makes the phosphor a potential candidate for ultraviolet light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

Method and apparatus for measuring purity of noble gases

DOEpatents

Austin, Robert

2008-04-01

A device for detecting impurities in a noble gas includes a detection chamber and a source of pulsed ultraviolet light. The pulse of the ultraviolet light is transferred into the detection chamber and onto a photocathode, thereby emitting a cloud of free electrons into the noble gas within the detection chamber. The cloud of electrons is attracted to the opposite end of the detection chamber by a high positive voltage potential at that end and focused onto a sensing anode. If there are impurities in the noble gas, some or all of the electrons within the cloud will bond with the impurity molecules and not reach the sensing anode. Therefore, measuring a lower signal at the sensing anode indicates a higher level of impurities while sensing a higher signal indicates fewer impurities. Impurities in the range of one part per billion can be measured by this device.

A trifurcated fiber-optic-probe-based optical system designed for AGEs measurement

NASA Astrophysics Data System (ADS)

Wang, Yikun; Zhang, Long; Zhu, Ling; Liu, Yong; Zhang, Gong; Wang, An

2012-03-01

Advanced Glycation End-products (AGEs) are biochemical end-products of non-enzymatic glycation and are formed irreversibly in human serum and skin tissue. AGEs are thought to play an important role in the pathogenesis of diabetes and corresponding complications. All conventional methods for measuring AGEs must take sampling and measure in vitro. These methods are invasive and have the problem of relatively time-consuming. AGEs have fluorescent characteristics. Skin AGEs can be assessed noninvasively by collecting the fluorescence emitted from skin tissue when excited with proper light. However, skin tissue has absorption and scattering effects on fluorescence of AGEs, it is not reliable to evaluate the accumulation of AGEs according the emitted fluorescence but not considering optical properties of skin tissue. In this study, a portable system for detecting AGEs fluorescence and skin reflectance spectrum simultaneously has been developed. The system mainly consists of an ultraviolet light source, a broadband light source, a trifurcated fiber-optic probe, and a compact charge coupled device (CCD) spectrometer. The fiber-optic probe consists of 36 optical fibers which are connected to the ultraviolet light source, 6 optical fibers connected to the broadband light source, and a core fiber connected to the CCD spectrometer. Demonstrative test measurements with the system on skin tissue of 40 healthy subjects have been performed. Using parameters that are calculated from skin reflectance spectrum, the distortion effects caused by skin absorption and scattering can be eliminated, and the integral intensity of corrected fluorescence has a strong correlation with the accumulation of AGEs. The system looks very promising for both laboratory and clinical applications to monitor AGEs related diseases, especially for chronic diabetes and complications.

Effect of quantum-well thickness on the optical polarization of AlGaN-based ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Zhang, Jing

2018-02-01

Optical polarization from AlGaN quantum well (QW) is crucial for realizing high-efficiency deep-ultraviolet (UV) light-emitting diodes (LEDs) because it determines the light emission patterns and light extraction mechanism of the devices. As the Al-content of AlGaN QW increases, the valence bands order changes and consequently the light polarization switches from transverse-electric (TE) to transverse-magnetic (TM) owing to the different sign and the value of the crystal field splitting energy between AlN (-169meV) and GaN (10meV). Several groups have reported that the ordering of the bands and the TE/TM crossover Al-content could be influenced by the strain state and the quantum confinement from the AlGaN QW system. In this work, we investigate the influence of QW thickness on the optical polarization switching point from AlGaN QW with AlN barriers by using 6-band k•p model. The result presents a decreasing trend of the critical Al-content where the topmost valence band switches from heave hole (HH) to crystal field spilt-off (CH) with increasing QW thicknesses due to the internal electric field and the strain state from the AlGaN QW. Instead, the TE- and TM-polarized spontaneous emission rates switching Al-content rises first and falls later because of joint consequence of the band mixing effect and the Quantum Confined Stark Effect. The reported optical polarization from AlGaN QW emitters in the UV spectral range is assessed in this work and the tendency of the polarization switching point shows great consistency with the theoretical results, which deepens the understanding of the physics from AlGaN QW UV LEDs.

Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

PubMed

Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

2016-02-10

We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.

A potential single-phased emission-tunable silicate phosphor Ca3Si2O7:Ce3+,Eu2+ excited by ultraviolet light for white light emitting diodes

NASA Astrophysics Data System (ADS)

Lv, Wenzhen; Guo, Ning; Jia, Yongchao; Zhao, Qi; You, Hongpeng

2013-03-01

Single-phased Ca3Si2O7:Ce3+,Eu2+ phosphor has been successfully prepared by the high temperature solid-state method. The phosphor shows efficient excitation bands from 200 to 400 nm and adjustable emission bands through the energy transfer from the Ce3+ to Eu2+ ions. The color hues can change from blue towards white ultimately to orange by adjusting the percentage content of doping ions. The investigation reveals that an electric dipole-dipole reaction mechanism should be responsible for the energy transfer from the Ce3+ to Eu2+ ions. The critical distance was obtained from the spectral overlap in terms of Dexter's theory. The developed phosphor Ca3Si2O7:Ce3+,Eu2+ exhibits two bands at 440 and 625 nm, respectively, which reveling that it has a great potentiality to be an UV-convertible phosphor for white-light emitting diodes with low color temperature.

Applications of Light Emitting Diodes in Health Care.

PubMed

Dong, Jianfei; Xiong, Daxi

2017-11-01

Light emitting diodes (LEDs) have become the main light sources for general lighting, due to their high lumen efficiency and long life time. Moreover, their high bandwidth and the availability of diverse wavelength contents ranging from ultraviolet to infrared empower them with great controllability in tuning brightness, pulse durations and spectra. These parameters are the essential ingredients of the applications in medical imaging and therapies. Despite the fast advances in both LED technologies and their applications, few reviews have been seen to link the controllable emission properties of LEDs to these applications. The objective of this paper is to bridge this gap by reviewing the main control techniques of LEDs that enable creating enhanced lighting patterns for imaging and generating effective photon doses for photobiomodulation. This paper also provides the basic mechanisms behind the effective LED therapies in treating cutaneous and neurological diseases. The emerging field of optogenetics is also discussed with a focus on the application of LEDs. The multidisciplinary topics reviewed in this paper can help the researchers in LEDs, imaging, light therapy and optogenetics better understand the basic principles in each other's field; and hence to stimulate the application of LEDs in health care.

Light shift from ultraviolet to near infrared light: Cerenkov luminescence with gold nanocluster - near infrared (AuNc-NIR) conjugates

NASA Astrophysics Data System (ADS)

Yoo, Su Woong; Mun, Hyoyoung; Oh, Gyungseok; Ryu, Youngjae; Kim, Min-Gon; Chung, Euiheon

2015-03-01

Cerenkov luminescence (CL) is generated when a charged particle moves faster than the speed of light in dielectric media. Recently CL imaging becomes an emerging technique with the use of radioisotopes. However, due to relatively weak blue light production and massive tissue attenuation, CL has not been applied widely. Therefore, we attempted to shift the CL emission to more near infrared (NIR) spectrum for better tissue penetration by using Cerenkov Radiation Energy Transfer (CRET). Gold nanoclusters were conjugated with NIR dye molecules (AuNc-IR820 and AuNc-ICG) to be activated with ultraviolet light. We found optimal conjugate concentrations of AuNc-NIR conjugates by spectroscopy system to generate maximal photon emission. When exposed by ultraviolet light, the emission of NIR light from the conjugates were verified. In quantitative analysis, AuNc-NIR conjugates emit brighter light signal than pure AuNc. This result implies that NIR fluorescent dyes (both IR820 and ICG) can be excited by the emission from AuNc. Following the above baseline experiment, we mixed F-18 fluorodeoxyglucose (F-18 FDG) radioisotope to the AuNc- NIR conjugates, to confirm NIR emission induced from Cerenkov radiation. Long pass filter was used to block Cerenkov luminescence and to collect the emission from AuNc-NIR conjugates. Instead of one long exposure imaging with CCD, we used multiple frame scheme to eliminate gamma radiation strike in each frame prior to combination. In summary, we obtained NIR emission light from AuNc-NIR conjugated dyes that is induced from CL. We plan to perform in vivo small animal imaging with these conjugates to assess better tissue penetration.

The efficiency of light-emitting diode suction traps for the collection of South African livestock-associated Culicoides species.

PubMed

Venter, G J; Boikanyo, S N B; De Beer, C J

2018-06-28

Culicoides biting midges (Diptera: Ceratopogonidae) are vectors of a range of orbiviruses that cause important veterinary diseases such as bluetongue and African horse sickness. The effective monitoring of Culicoides species diversity and abundance, both at livestock and near potential wildlife hosts, is essential for risk management. The Onderstepoort 220-V ultraviolet (UV) light trap is extensively used for this purpose. Reducing its power requirements by fitting low-energy light-emitting diodes (LEDs) can lead to greater flexibility in monitoring. A comparison of the efficiency of the 220-V Onderstepoort trap (8-W fluorescent UV light) with the efficiency of the 220-V or 12-V Onderstepoort traps fitted with red, white, blue or green LEDs or a 12-V fluorescent Onderstepoort trap demonstrated the 220-V Onderstepoort trap to be the most efficient. All the results showed nulliparous Culicoides imicola Kieffer females to be the dominant grouping. Despite the lower numbers collected, 12-V traps can be used in field situations to determine the most abundant species. © 2018 The Royal Entomological Society.

Lethal effects of short-wavelength visible light on insects.

PubMed

Hori, Masatoshi; Shibuya, Kazuki; Sato, Mitsunari; Saito, Yoshino

2014-12-09

We investigated the lethal effects of visible light on insects by using light-emitting diodes (LEDs). The toxic effects of ultraviolet (UV) light, particularly shortwave (i.e., UVB and UVC) light, on organisms are well known. However, the effects of irradiation with visible light remain unclear, although shorter wavelengths are known to be more lethal. Irradiation with visible light is not thought to cause mortality in complex animals including insects. Here, however, we found that irradiation with short-wavelength visible (blue) light killed eggs, larvae, pupae, and adults of Drosophila melanogaster. Blue light was also lethal to mosquitoes and flour beetles, but the effective wavelength at which mortality occurred differed among the insect species. Our findings suggest that highly toxic wavelengths of visible light are species-specific in insects, and that shorter wavelengths are not always more toxic. For some animals, such as insects, blue light is more harmful than UV light.

Lethal effects of short-wavelength visible light on insects

NASA Astrophysics Data System (ADS)

Hori, Masatoshi; Shibuya, Kazuki; Sato, Mitsunari; Saito, Yoshino

2014-12-01

We investigated the lethal effects of visible light on insects by using light-emitting diodes (LEDs). The toxic effects of ultraviolet (UV) light, particularly shortwave (i.e., UVB and UVC) light, on organisms are well known. However, the effects of irradiation with visible light remain unclear, although shorter wavelengths are known to be more lethal. Irradiation with visible light is not thought to cause mortality in complex animals including insects. Here, however, we found that irradiation with short-wavelength visible (blue) light killed eggs, larvae, pupae, and adults of Drosophila melanogaster. Blue light was also lethal to mosquitoes and flour beetles, but the effective wavelength at which mortality occurred differed among the insect species. Our findings suggest that highly toxic wavelengths of visible light are species-specific in insects, and that shorter wavelengths are not always more toxic. For some animals, such as insects, blue light is more harmful than UV light.

Improved ultraviolet emission performance from polarization-engineered n-ZnO/p-GaN heterojunction diode

NASA Astrophysics Data System (ADS)

Jiang, Junyan; Zhang, Yuantao; Chi, Chen; Shi, Zhifeng; Yan, Long; Li, Pengchong; Zhang, Baolin; Du, Guotong

2016-02-01

O-polar ZnO films were grown on N-polar p-GaN/sapphire substrates by photo-assisted metal-organic chemical vapor deposition, and further heterojunction light-emitting diodes based O-polar n-ZnO/N-polar p-GaN were proposed and fabricated. It is experimentally demonstrated that the interface polarization of O-polar n-ZnO/N-polar p-GaN heterojunction can shift the location of the depletion region from the interface deep into the ZnO side. When a forward bias is applied to the proposed diode, a strong and high-purity ultraviolet emission located at 385 nm can be observed. Compared with conventional Zn-polar n-ZnO/Ga-polar p-GaN heterostructure diode, the ultraviolet emission intensity of the proposed heterojunction diode is greatly enhanced due to the presence of polarization-induced inversion layer at the ZnO side of the heterojunction interface. This work provides an innovative path for the design and development of ZnO-based ultraviolet diode.

Multi-angle ZnO microstructures grown on Ag nanorods array for plasmon-enhanced near-UV-blue light emitter

NASA Astrophysics Data System (ADS)

Pal, Anil Kumar; Bharathi Mohan, D.

2017-10-01

Metal enhanced ultraviolet light emission has been explored in ZnO/Ag hybrid structures prepared by hydrothermal growth of multi-angled ZnO nanorods on slanted Ag nanorods array fabricated by the thermal evaporation technique. Slanted Ag nanorods are realized to be the stacking of non-spherical Ag nanoparticles, resulting in asymmetric surface plasmon resonance spectra. The surface roughness of Ag nanorod array films significantly influences the growth mechanism of ZnO nanorods, leading to the formation of multi-angled ZnO microflowers. ZnO/Ag hybrid structures facilitate the interfacial charge transfer from Ag to ZnO with the realization of negative shift in binding energy of Ag 3d orbitals by ˜0.8 eV. These high quality ZnO nanorods in ZnO/Ag hybrid nanostructures exhibit strong ultraviolet emission in the 383-396 nm region without broad deep level emission, which can be explained by a suitable band diagram. The metal enhanced photoluminescence is witnessed mainly due to interfacial charge transfer with its dependence on surface roughness of bottom layer Ag nanorods, number density of ZnO nanorods and diversity in the interfacial area between Ag and ZnO nanorods. The existence of strong ultraviolet light with minor blue light emission and appearance of CIE shade in strong violet-blue region by ZnO/Ag hybrid structures depict exciting possibilities towards near UV-blue light emitting devices.

Multi-angle ZnO microstructures grown on Ag nanorods array for plasmon-enhanced near-UV-blue light emitter.

PubMed

Pal, Anil Kumar; Mohan, D Bharathi

2017-10-13

Metal enhanced ultraviolet light emission has been explored in ZnO/Ag hybrid structures prepared by hydrothermal growth of multi-angled ZnO nanorods on slanted Ag nanorods array fabricated by the thermal evaporation technique. Slanted Ag nanorods are realized to be the stacking of non-spherical Ag nanoparticles, resulting in asymmetric surface plasmon resonance spectra. The surface roughness of Ag nanorod array films significantly influences the growth mechanism of ZnO nanorods, leading to the formation of multi-angled ZnO microflowers. ZnO/Ag hybrid structures facilitate the interfacial charge transfer from Ag to ZnO with the realization of negative shift in binding energy of Ag 3d orbitals by ∼0.8 eV. These high quality ZnO nanorods in ZnO/Ag hybrid nanostructures exhibit strong ultraviolet emission in the 383-396 nm region without broad deep level emission, which can be explained by a suitable band diagram. The metal enhanced photoluminescence is witnessed mainly due to interfacial charge transfer with its dependence on surface roughness of bottom layer Ag nanorods, number density of ZnO nanorods and diversity in the interfacial area between Ag and ZnO nanorods. The existence of strong ultraviolet light with minor blue light emission and appearance of CIE shade in strong violet-blue region by ZnO/Ag hybrid structures depict exciting possibilities towards near UV-blue light emitting devices.

Phototaxis of Propsilocerus akamusi (Diptera: Chironomidae) From a Shallow Eutrophic Lake in Response to Led Lamps.

PubMed

Hirabayashi, Kimio; Nagai, Yoshinari; Mushya, Tetsuya; Higashino, Makoto; Taniguchi, Yoshio

2017-06-01

A study on the attraction of adult Propsilocerus akamusi midges to different-colored light traps was carried out from October 21 to November 15, 2013. The 6 colored lights used in light-emitting diode (LED) lamps were white, green, red, blue, amber, and ultraviolet (UV). The UV lamp attracted the most P. akamusi, followed by green, white, blue, amber, and red. A white pulsed LED light attracted only half the number of midges as did a continuous-emission white LED light. The result indicated that manipulation of light color, considering that the red LED light and/or pulsed LED light are not as attractive as the other colors, may be appropriate for the development of an overall integrated strategy to control nuisance P. akamusi in the Lake Suwa area.

UV light-emitting-diode photochemical mercury vapor generation for atomic fluorescence spectrometry.

PubMed

Hou, Xiaoling; Ai, Xi; Jiang, Xiaoming; Deng, Pengchi; Zheng, Chengbin; Lv, Yi

2012-02-07

A new, miniaturized and low power consumption photochemical vapor generation (PVG) technique utilizing an ultraviolet light-emitting diode (UV-LED) lamp is described, and further validated via the determination of trace mercury. In the presence of formic acid, the mercury cold vapor is favourably generated from Hg(2+) solutions by UV-LED irradiation, and then rapidly transported to an atomic fluorescence spectrometer for detection. Optimum conditions for PVG and interferences from concomitant elements were investigated in detail. Under optimum conditions, a limit of detection (LOD) of 0.01 μg L(-1) was obtained, and the precision was better than 3.2% (n = 11, RSD) at 1 μg L(-1) Hg(2+). No obvious interferences from any common ions were evident. The methodology was successfully applied to the determination of mercury in National Research Council Canada DORM-3 fish muscle tissue and several water samples.

Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

PubMed Central

Lee, Ching-Ting

2010-01-01

Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

Red, green, and blue luminescence by carbon dots: full-color emission tuning and multicolor cellular imaging.

PubMed

Jiang, Kai; Sun, Shan; Zhang, Ling; Lu, Yue; Wu, Aiguo; Cai, Congzhong; Lin, Hengwei

2015-04-27

A facile approach for preparation of photoluminescent (PL) carbon dots (CDs) is reported. The three resulting CDs emit bright and stable red, green and blue (RGB) colors of luminescence, under a single ultraviolet-light excitation. Alterations of PL emission of these CDs are tentatively proposed to result from the difference in their particle size and nitrogen content. Interestingly, up-conversion (UC)PL of these CDs is also observed. Moreover, flexible full-color emissive PVA films can be achieved through mixing two or three CDs in the appropriate ratios. These CDs also show low cytotoxicity and excellent cellular imaging capability. The facile preparation and unique optical features make these CDs potentially useful in numerous applications such as light-emitting diodes, full-color displays, and multiplexed (UC)PL bioimaging. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Tuning the white light spectrum of light emitting diode lamps to reduce attraction of nocturnal arthropods

PubMed Central

Longcore, Travis; Aldern, Hannah L.; Eggers, John F.; Flores, Steve; Franco, Lesly; Hirshfield-Yamanishi, Eric; Petrinec, Laina N.; Yan, Wilson A.; Barroso, André M.

2015-01-01

Artificial lighting allows humans to be active at night, but has many unintended consequences, including interference with ecological processes, disruption of circadian rhythms and increased exposure to insect vectors of diseases. Although ultraviolet and blue light are usually most attractive to arthropods, degree of attraction varies among orders. With a focus on future indoor lighting applications, we manipulated the spectrum of white lamps to investigate the influence of spectral composition on number of arthropods attracted. We compared numbers of arthropods captured at three customizable light-emitting diode (LED) lamps (3510, 2704 and 2728 K), two commercial LED lamps (2700 K), two commercial compact fluorescent lamps (CFLs; 2700 K) and a control. We configured the three custom LEDs to minimize invertebrate attraction based on published attraction curves for honeybees and moths. Lamps were placed with pan traps at an urban and two rural study sites in Los Angeles, California. For all invertebrate orders combined, our custom LED configurations were less attractive than the commercial LED lamps or CFLs of similar colour temperatures. Thus, adjusting spectral composition of white light to minimize attracting nocturnal arthropods is feasible; not all lights with the same colour temperature are equally attractive to arthropods. PMID:25780237

The Spectrum of Single Bubble Sonoluminescence.

NASA Astrophysics Data System (ADS)

Hiller, Robert Anthony

1995-01-01

An acoustically levitated bubble in a liquid may be driven to produce short flashes of light synchronous with the sound field in a process called sonoluminescence. The spectrum of the emitted light is measured with a grating monochromator and calibrated for absolute spectral radiance. The spectrum has been measured for various gases dissolved in pure water and heavy water, and alcohols and other hydrocarbon liquids. At a bandpass of 10nm EWHM the spectra are broad -band, showing no sign of lines or absorptions, with a peak in the ultraviolet. The experimental apparatus, including a system for producing sonoluminescence in a sealed container, is described.

Experimental evaluation of LED-based solar blind NLOS communication links.

PubMed

Chen, Gang; Abou-Galala, Feras; Xu, Zhengyuan; Sadler, Brian M

2008-09-15

Experimental results are reported demonstrating non-line of sight short-range ultraviolet communication link losses, and performance of photon counting detectors, operating in the solar blind spectrum regime. We employ light emitting diodes with divergent beams, a solar blind filter, and a wide field-of-view detector. Signal and noise statistics are characterized, and receiver performance is demonstrated. The effects of transmitter and receiver elevation angles, separation distance, and path loss are included.

Improving the light output power of DUV-LED by introducing an intrinsic last quantum barrier interlayer on the high-quality AlN template

NASA Astrophysics Data System (ADS)

Tsai, Chia-Lung; Liu, Hsueh-Hsing; Chen, Jun-Wei; Lu, Chien-Pin; Ikenaga, Kazutada; Tabuchi, Toshiya; Matsumoto, Koh; Fu, Yi-Keng

2017-12-01

We demonstrate that the light output power of deep ultraviolet light-emitting diodes (DUV-LEDs) can be improved by introducing an intrinsic last quantum barrier interlayer to a high quality AlN template. The light output power of the DUV-LEDs can be doubled by substituting the last quantum barrier with an intrinsic last quantum barrier (u-LQB)/Mg-doped LQB for only pure u-LQB in the same thickness with a 35 A/cm2 injection current. It is believed that the improved performance of the DUV LED could be attributed to the decreased diffusion of Mg tunneling into MQW and the reduction of sub-band parasitic emissions.

An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

NASA Astrophysics Data System (ADS)

Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

2016-09-01

AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

The synthesis and luminescence properties of a novel red-emitting phosphor: Eu3+-doped Ca9La(PO4)7

NASA Astrophysics Data System (ADS)

Liang, Zehui; Mu, Zhongfei; Wang, Qiang; Zhu, Daoyun; Wu, Fugen

2017-10-01

A series of novel red-emitting phosphors Ca9La1- x (PO4)7: xEu3+ were synthesized by high-temperature solid state reactions. The photoluminescence excitation and photoluminescence spectra of these phosphors were investigated in detail. O2--Eu3+ charge transfer band peaking at about 261 nm is dominant in the PLE spectra of Eu3+-doped Ca9La(PO4)7, indicating that the phosphors are suitable for tricolor fluorescent lamps. The phosphors also show a good absorption in near ultraviolet (around 395 nm) and blue (around 465 nm) spectral region, which indicates that it can be pumped with NUV and blue chips for white light-emitting diodes. The transition of 5D0 → 7F2 of Eu3+ in this lattice can emit bright red light. Ca9La(PO4)7 could accommodate a large amount of Eu3+ with an optimal concentration of 60 mol%. The dipole-dipole interaction between Eu3+ is the dominant mechanism for concentration quenching of Eu3+. The calculated color coordinates lie in red region ( x = 0.64, y = 0.36), which is close to Y2O3: 0.05Eu3+ ( x = 0.65, y = 0.34). The integral emission intensity of Ca9La0.4(PO4)7: 0.6Eu3+ is 1.9 times stronger than that of widely used commercial red phosphor Y2O3: 0.05Eu3+. All these results indicate that Eu3+-doped Ca9La(PO4)7 is a promising red-emitting phosphor which can be used in tricolor fluorescent lamps and white light-emitting diodes.

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

The Imprint of the Extragalactic Background Light in the Gamma-Ray Spectra of Blazars

NASA Technical Reports Server (NTRS)

Ackermann, M.; Ajello, M.; Allafort, A.; Schady, P.; Baldini, L.; Ballet, J.; Barbiellini, G.; Bastieri, D.; Bellazzini, R; Blandford, R. D.;

The photocytotoxicity of different lights on mammalian cells in interior lighting system.

PubMed

Song, Jiayin; Gao, Tingting; Ye, Maole; Bi, Hongtao; Liu, Gang

2012-12-05

In the present paper, two light sources commonly used in interior lighting system: incandescent light and light emitting diode (LED) were chosen to evaluate their influences on three kinds of mammalian cells, together with UVA and UVB, and the mechanism of the photocytotoxicity was investigated in terms of intracellular ROS production, lipid peroxidation, SOD activity and GSH level assays. The results showed that LED and incandescent light both had some photocytotoxicities. In the interior lighting condition (100lx-250lx), the cytotoxicities of LED and incandescent lamp on RF/6A cells (rhesus retinal pigment epithelium cell line) were stronger than that on two fibroblast cell lines, while the cytotoxicity of UVA and UVB on HS68 cells (fibroblast cell line) was highest in the tests. The mechanism analysis revealed that the photocytotoxicities of LED and incandescent lamp were both caused by cell lipid peroxidation. LED and incandescent light could promote the production of ROS, raise lipid peroxidation level and lower the activity of the antioxidant key enzymes in mammalian cells, and finally cause a number of cells death. However, the negative function of LED was significantly smaller than incandescent light and ultraviolet in daily interior lighting condition. And the significantly lower photocytotoxicity of LED might be due to the less existence of ultraviolet. Therefore, LED is an efficient and relative safe light source in interior lighting system, which should be widely used instead of traditional light source. Copyright © 2012 Elsevier B.V. All rights reserved.

VLED for Si wafer-level packaging

NASA Astrophysics Data System (ADS)

Chu, Chen-Fu; Chen, Chiming; Yen, Jui-Kang; Chen, Yung-Wei; Tsou, Chingfu; Chang, Chunming; Doan, Trung; Tran, Chuong Anh

2012-03-01

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

Surface exciton emission of MgO crystals

NASA Astrophysics Data System (ADS)

Kuang, Wen-Jian; Li, Qing; Chen, Yu-Xiang; Hu, Kai; Wang, Ning-Hui; Xing, Fang-Li; Yan, Qun; Sun, Shuai-Shuai; Huang, Yan; Tao, Ye; Tolner, Harm

2013-09-01

MgO crystals have been exposed to vacuum ultraviolet (VUV) radiation from a synchrotron, with energies up to 9 eV, and the emitted light, at wavelengths above 200 nm, was observed. It is concluded that bulk excitons, play an important role in the diffusion of energy inside MgO crystals, resulting in 5.85 eV (212 nm) emission from the MgO terraces of large (0.2-2 µm) MgO : F crystals. In the case of aliovalent impurity doping, then the bulk exciton energy is also transferred to the Vk centres and 5.3 eV (235 nm) light is emitted. Both fluorine and silicon doping appear to promote UV surface emission, acting similarly to an ns2 ion inside MgO, while strong scandium doping is killing the surface emission completely. The 212 nm surface UV emission and the 235 nm bulk UV emission can be excited only at the bandgap edge. Broadband visible light, centred around 400 nm, is also emitted. Contrary to the UV emission, this is not generated when excited at the bandgap edge; instead, we find that it is only excited at sub-bandgap energies, with a maximum at the 5C surface excitation energy of 5.71 eV (217 nm) for the MgO terraces.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Peican; Zhou, Liya, E-mail: zhouliyatf@163.com; Mo, Fuwang

Graphical abstract: - Highlights: • Novel Eu{sup 2+} doped Sr{sub 6}Ca{sub 4}(PO{sub 4}){sub 6}F{sub 2} phosphors was synthesized for the first time. • The Sr{sub 6}Ca{sub 4}(PO{sub 4}){sub 6}F{sub 2}:Eu{sup 2+} phosphors produced blue light when irradiated at 368 nm. • The emission band of the sample could be decomposed into two Gaussian profiles. - Abstract: For the first time, a series of novel blue light-emitting phosphors Sr{sub 6}Ca{sub 4}(PO{sub 4}){sub 6}F{sub 2}:Eu{sup 2+} were synthesized by a traditional solid-state reaction. The phosphors exhibited a broad and intense excitation band that could be pumped by near ultraviolet to exhibit amore » broad photoluminescence band ranging from 400 nm to 530 nm peaking at 452 nm. Quenching concentration was 0.05 mol. Furthermore, the mechanism of concentration quenching involving SCPF:Eu{sup 2+} was demonstrated to be a dipole–dipole interaction with critical distance of 27.95 Å. Decay time curves were also measured to validate energy transfer, and quantum efficiency is investigated. The chromaticity diagram of Commission Internationale de l’Eclairage indicated that SCPF:Eu{sup 2+} may be used as a blue-emitting component for white light-emitting diode applications.« less

Saturn Apollo Program

NASA Image and Video Library

1972-04-27

The Apollo 16 Command Module splashed down in the Pacific Ocean on April 27, 1972 after an 11-day moon exploration mission. The sixth manned lunar landing mission, the Apollo 16 (SA-511), carrying three astronauts: Mission Commander John W. Young, Command Module pilot Thomas K. Mattingly II, and Lunar Module pilot Charles M. Duke, lifted off on April 16, 1972. The Apollo 16 continued the broad-scale geological, geochemical, and geophysical mapping of the Moon’s crust, begun by the Apollo 15, from lunar orbit. This mission marked the first use of the Moon as an astronomical observatory by using the ultraviolet camera/spectrograph which photographed ultraviolet light emitted by Earth and other celestial objects. The Lunar Roving Vehicle, developed by the Marshall Space Flight Center, was also used.

Saturn Apollo Program

NASA Image and Video Library

1972-04-18

This view of the back side of the Moon was captured by the Apollo 16 mission crew. The sixth manned lunar landing mission, the Apollo 16 (SA-511), carrying three astronauts: Mission Commander John W. Young, Command Module pilot Thomas K. Mattingly II, and Lunar Module pilot Charles M. Duke, lifted off on April 16, 1972. The Apollo 16 continued the broad-scale geological, geochemical, and geophysical mapping of the Moon’s crust, begun by the Apollo 15, from lunar orbit. This mission marked the first use of the Moon as an astronomical observatory by using the ultraviolet camera/spectrograph which photographed ultraviolet light emitted by Earth and other celestial objects. The Lunar Roving Vehicle, developed by the Marshall Space Flight Center, was also used. The mission ended on April 27, 1972.

Chip design for thin-film deep ultraviolet LEDs fabricated by laser lift-off of the sapphire substrate

NASA Astrophysics Data System (ADS)

Cho, H. K.; Krüger, O.; Külberg, A.; Rass, J.; Zeimer, U.; Kolbe, T.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.

2017-12-01

We report on a chip design which allows the laser lift-off (LLO) of the sapphire substrate sustaining the epitaxial film of flip-chip mounted deep ultraviolet light emitting diodes. A nanosecond pulsed excimer laser with a wavelength of 248 nm was used for the LLO. A mechanically stable chip design was found to be the key to prevent crack formation in the epitaxial layers and material chipping during the LLO process. Stabilization was achieved by introducing a Ti/Au leveling layer that mechanically supports the fragile epitaxial film. The electrical and optical characterization of devices before and after the LLO process shows that the device performance did not degrade by the LLO.

Atomic Layer Deposition Enabled Interconnect Technology for Vertical Nanowire Arrays

DTIC Science & Technology

2009-06-01

Diodes”, Nano Lett., Vol. 5, No. 11, 2005. [5] Hwa-Mok Kim, Tae Won Kang and Kwan Soo Chung,“Nanoscale Ultraviolet-Light- Emitting Diodes Using Wide...Bandgap Gallium Nitride Nanorods”, Adv. Materi. 2003, 15, No. 7-8. [6] Candace K. Chan, Hailin Peng, Gao Liu, Kevin McIlwrath, Xiao Feng Zhang...Coatings”Adv. Mater. (Weinheim, Ger.) 19, 1801 2007. [13] Candace K. Chan, Hailin Peng, Gao Liu, Kevin McIlwrath, Xiao Feng Zhang, Robert A. Huggins

A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} for near UV white light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Zhigang; Zhao, Zhengyan; Shi, Yurong

2013-10-15

Graphical abstract: - Highlights: • Novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was prepared by solid-state reaction. • Excitation spectra suggested an obvious absorption in near-ultraviolet region. • Under 392 nm excitation, the phosphors exhibited a red emission at 614 nm. • Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white LEDs. - Abstract: A novel red phosphor Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} was synthesized using a solid-state reaction method, and its luminescence characteristics and charge compensators effect (Li{sup +}, Na{sup +}, K{sup +}) were investigated. The excitation spectra showed a obviousmore » absorption in near-ultraviolet region. Under 392 nm excitation, the phosphors exhibited an intense red emission at 614 nm. The Commission Internationale de l’Eclairage (CIE) chromaticity coordinates and quantum efficiency (QE) were (0.65, 0.35) and 62.3%, respectively. The good color saturation, high quantum efficiency and small thermal-quenching properties indicate that Ca{sub 12}Al{sub 14}O{sub 32}Cl{sub 2}:Eu{sup 3+} could be potentially applied in near UV white light-emitting diodes.« less

Calibration of optimal use parameters for an ultraviolet light-emitting diode in eliminating bacterial contamination on needleless connectors.

PubMed

Hutchens, M P; Drennan, S L; Cambronne, E D

2015-06-01

Needleless connectors may develop bacterial contamination and cause central-line-associated bloodstream infections (CLABSI) despite rigorous application of best-practice. Ultraviolet (UV) light-emitting diodes (LED) are an emerging, increasingly affordable disinfection technology. We tested the hypothesis that a low-power UV LED could reliably eliminate bacteria on needleless central-line ports in a laboratory model of central-line contamination. Needleless central-line connectors were inoculated with Staphylococcus aureus. A 285 nm UV LED was used in calibrated fashion to expose contaminated connectors. Ports were directly applied to agar plates and flushed with sterile saline, allowing assessment of bacterial survival on the port surface and in simulated usage flow-through fluid. UV applied to needleless central-line connectors was highly lethal at 0·5 cm distance at all tested exposure times. At distances >1·5 cm both simulated flow-through and port surface cultures demonstrated significant bacterial growth following UV exposure. Logarithmic-phase S. aureus subcultures were highly susceptible to UV induction/maintenance dosing. Low-power UV LED doses at fixed time and distance from needleless central-line connector ports reduced cultivable S. aureus from >10(6) CFU to below detectable levels in this laboratory simulation of central-line port contamination. Low-power UV LEDs may represent a feasible alternative to current best-practice in connector decontamination. © 2015 The Society for Applied Microbiology.

Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hassanein, Ahmed; Konkashbaev, Isak

A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

Feasibility of Ultraviolet Light Emitting Diodes as an Alternative Light Source for Photocatalysis

NASA Technical Reports Server (NTRS)

Levine, Langanf H.; Richards, Jeffrey T.; Soler, Robert; Maxik, Fred; Coutts, Janelle; Wheeler, Raymond M.

2011-01-01

The objective of this study was to determine whether ultraviolet light emitting diodes (UV-LEDs) could serve as an alternative photon source efficiently for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp in a Silica-Titania Composite (STC) packed bed annular reactor. Lighting and thermal properties were characterized to assess the uniformity and total irradiant output. A forward current of (I(sub F)) 100 mA delivered an average irradiance of 4.0 m W cm(exp -2), which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED- and BLB-reactors were tested for the oxidization of 50 ppmv ethanol in a continuous flow-through mode with 0.94 sec space time. At the same irradiance, the UV-A LED reactor resulted in a lower PCO rate constant than the UV-A BLB reactor (19.8 vs. 28.6 nM CO2 sec-I), and consequently lower ethanol removal (80% vs. 91%) and mineralization efficiency (28% vs. 44%). Ethanol mineralization increased in direct proportion to the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED- reactor could be traced to uneven irradiance over the photocatalyst, leaving a portion of the catalyst was under-irradiated. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off' feature for periodic irradiation. Nevertheless, the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB. These results demonstrated that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

Characterization of Luminescent Materials with 151Eu Mössbauer Spectroscopy

PubMed Central

Johnson, Charles E.; Schweizer, Stefan

2018-01-01

The application of Mössbauer spectroscopy to luminescent materials is described. Many solids doped with europium are luminescent, i.e., when irradiated with light they emit light of a longer wavelength. These materials therefore have practical applications in tuning the light output of devices like light emitting diodes. The optical properties are very different for the two possible valence states Eu2+ and Eu3+, the former producing ultraviolet/visible light that shifts from violet to red depending on the host and the latter red light, so it is important to have a knowledge of their behavior in a sample environment. Photoluminescence spectra cannot give a quantitative analysis of Eu2+ and Eu3+ ions. Mössbauer spectroscopy, however, is more powerful and gives a separate spectrum for each oxidation state enabling the relative amount present to be estimated. The oxidation state can be identified from its isomer shift which is between −12 and −15 mm/s for Eu2+ compared to around 0 mm/s for Eu3+. Furthermore, within each oxidation state, there are changes depending on the ligands attached to the europium: the shift is more positive for increased covalency of the bonding ligand X, or Eu concentration, and decreases for increasing Eu–X bond length. PMID:29772832

Droop-free Al_xGa_1-xN/Al_yGa_1-yN quantum-disks-in-nanowires ultraviolet LED emitting at 337 nm on metal/silicon substrates.

PubMed

Janjua, Bilal; Sun, Haiding; Zhao, Chao; Anjum, Dalaver H; Priante, Davide; Alhamoud, Abdullah A; Wu, Feng; Li, Xiaohang; Albadri, Abdulrahman M; Alyamani, Ahmed Y; El-Desouki, Munir M; Ng, Tien Khee; Ooi, Boon S

2017-01-23

Currently the AlGaN-based ultraviolet (UV) solid-state lighting research suffers from numerous challenges. In particular, low internal quantum efficiency, low extraction efficiency, inefficient doping, large polarization fields, and high dislocation density epitaxy constitute bottlenecks in realizing high power devices. Despite the clear advantage of quantum-confinement nanostructure, it has not been widely utilized in AlGaN-based nanowires. Here we utilize the self-assembled nanowires (NWs) with embedding quantum-disks (Qdisks) to mitigate these issues, and achieve UV emission of 337 nm at 32 A/cm² (80 mA in 0.5 × 0.5 mm² device), a turn-on voltage of ~5.5 V and droop-free behavior up to 120 A/cm² of injection current. The device was grown on a titanium-coated n-type silicon substrate, to improve current injection and heat dissipation. A narrow linewidth of 11.7 nm in the electroluminescence spectrum and a strong wavefunctions overlap factor of 42% confirm strong quantum confinement within uniformly formed AlGaN/AlGaN Qdisks, verified using transmission electron microscopy (TEM). The nitride-based UV nanowires light-emitting diodes (NWs-LEDs) grown on low cost and scalable metal/silicon template substrate, offers a scalable, environment friendly and low cost solution for numerous applications, such as solid-state lighting, spectroscopy, medical science and security.

Instrumentation and Measurements for Electron Emission from Charged Insulators

NASA Technical Reports Server (NTRS)

Sim, Alec M.

2005-01-01

The electron was first discovered in 1898 by Sir John Joseph Thomson and has since been the subject of detailed study by nearly every scientific discipline. At nearly the same time Heinrich Rudolf Hertz conducted a series of experiments using cathode tubes, high potentials and ultraviolet light. When applying a large potential to a cathode he found that an arching event across the metal plates would occur. In addition, when shining an ultraviolet light on the metal he found that less potential was required to induce the spark. This result, taken together with other electrical phenomena brought about by the shining of light upon metal and was eventually termed the photoelectric effect. The work of Thomson and Hertz represent the beginning of electron emission studies and a body of ideas that pervade nearly all aspects of physics. In particular these ideas tell us a great deal about the nature of physical interactions within solids. In this thesis we will focus on the emission of electrons induced by an incident electron source over a range of energies, in which one can observe changes in emitted electron flux and energy distribution. In particular, when energetic particles impinge on a solid they can impart their energy, exciting electrons within the material. If this energy is sufficient to overcome surface energy barriers such as the work function, electron affinity or surface charge potential, electrons can escape from the material. The extent of electron emission from the material can be quantified as the ratio of incident particle flux to emitted particle flux, and is termed the electron yield.

Electron beam pumped semiconductor laser

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Electron-beam-pumped semiconductor ultra-violet optical sources (ESUVOSs) are disclosed that use ballistic electron pumped wide bandgap semiconductor materials. The sources may produce incoherent radiation and take the form of electron-beam-pumped light emitting triodes (ELETs). The sources may produce coherent radiation and take the form of electron-beam-pumped laser triodes (ELTs). The ELTs may take the form of electron-beam-pumped vertical cavity surface emitting lasers (EVCSEL) or edge emitting electron-beam-pumped lasers (EEELs). The semiconductor medium may take the form of an aluminum gallium nitride alloy that has a mole fraction of aluminum selected to give a desired emission wavelength, diamond, or diamond-like carbon (DLC). The sources may be produced from discrete components that are assembled after their individual formation or they may be produced using batch MEMS-type or semiconductor-type processing techniques to build them up in a whole or partial monolithic manner, or combination thereof.

Infrared Echoes of a Black Hole Eating a Star Illustration

NASA Image and Video Library

2016-09-15

This illustration shows a glowing stream of material from a star as it is being devoured by a supermassive black hole in a tidal disruption flare. When a star passes within a certain distance of a black hole -- close enough to be gravitationally disrupted -- the stellar material gets stretched and compressed as it falls into the black hole. In the process of being accreted, the gas heats up and creates a lot of optical and ultraviolet light, which destroys nearby dust but merely heats dust further out. The farther dust that is heated emits a large amount of infrared light. In recent years, a few dozen such flares have been discovered, but they are not well understood. Astronomers gained new insights into tidal disruption flares thanks to data from NASA's Wide-field Infrared Survey Explorer (WISE). Studies using WISE data characterized tidal disruption flares by studying how surrounding dust absorbs and re-emits their light, like echoes. This approach allowed scientists to measure the energy of flares from stellar tidal disruption events more precisely than ever before. http://photojournal.jpl.nasa.gov/catalog/PIA20027

Bactericidal effect of the photocatalystic reaction of titanium dioxide using visible wavelengths on Streptococcus mutans biofilm.

PubMed

Kim, Chan-Hee; Lee, Eun-Song; Kang, Si-Mook; de Josselin de Jong, Elbert; Kim, Baek-Il

2017-06-01

The aim of this study was to determine the effect of titanium dioxide (TiO 2 ) photocatalysis induced by the application of clinically acceptable visible light at 405nm on the growth of Streptococcus mutans biofilms. S. mutans biofilms were grown on a hydroxyapatite (HA) disk and deposited in a rutile-type TiO 2 solution at a concentration of 0.1mg/mL. TiO 2 photocatalysis was measured for exposure to visible light (405nm) and ultraviolet (UV) light (254nm) produced by light-emitting diodes for 10, 20, 30, and 40min. After two treatments, the number of colonies formed in the final S. mutans biofilm on the HA disk were measured to confirm their viability, and the morphological changes of S. mutans were evaluated using scanning electronic microscopy. The bactericidal effects of 254- and 405-nm light resulted in > 5-log and 4-log reductions, respectively (p<0.05), after 20min of treatment and a>7-log reduction after 40min of treatment in both treatment groups relative to the control group. It was confirmed that the antibacterial effect could be shown by causing the photocatalytic reaction of TiO 2 in S. mutans biofilm even at the wavelength of visible light (405nm) as at the wavelength of ultraviolet light (254nm). Copyright © 2017 Elsevier B.V. All rights reserved.

UV-Enhanced IR Raman System for Identifying Biohazards

NASA Technical Reports Server (NTRS)

Stirbl, Robert; Moynihan, Philip; Lane, Arthur

2003-01-01

An instrumentation system that would include an ultraviolet (UV) laser or light-emitting diode, an infrared (IR) laser, and the equivalent of an IR Raman spectrometer has been proposed to enable noncontact identification of hazardous biological agents and chemicals. In prior research, IR Raman scattering had shown promise as a means of such identification, except that the Raman-scattered light was often found to be too weak to be detected or to enable unambiguous identification in practical applications. The proposed system would utilize UV illumination as part of a two-level optical-pumping scheme to intensify the Raman signal sufficiently to enable positive identification.

White light emission and optical gains from a Si nanocrystal thin film

NASA Astrophysics Data System (ADS)

Wang, Dong-Chen; Hao, Hong-Chen; Chen, Jia-Rong; Zhang, Chi; Zhou, Jing; Sun, Jian; Lu, Ming

2015-11-01

We report a Si nanocrystal thin film consisting of free-standing Si nanocrystals, which can emit white light and show positive optical gains for its red, green and blue (RGB) components under ultraviolet excitation. Si nanocrystals with ϕ = 2.31 ± 0.35 nm were prepared by chemical etching of Si powder, followed by filtering. After being mixed with SiO2 sol-gel and thermally annealed, a broadband photoluminescence (PL) from the thin film was observed. The RGB ratio of the PL can be tuned by changing the annealing temperature or atmosphere, which is 1.00/3.26/4.59 for the pure white light emission. The origins of the PL components could be due to differences in oxygen-passivation degree for Si nanocrystals. The results may find applications in white-light Si lasing and Si lighting.

Low cost batch fabrication of microdevices using ultraviolet light-emitting diode photolithography technique

NASA Astrophysics Data System (ADS)

Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan

2016-01-01

Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.

Near-Infrared Scintillation of Liquid Argon

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tilly, Elizabeth; Escobar, Carlos

2017-01-01

Liquid argon is well known to scintillate in the vacuum ultraviolet (VUV) range which is inherently difficult to detect. There has been recent evidence to suggest that it also emits near infrared (NIR) light. If this is the case, many large-scale time projection chambers and other similar detectors will be able to maximize light collection while minimizing cost. The goal of this project is to confirm and quantify this NIR emission. In order to accomplish this, an α-source was placed in a volume of highly purified liquid argon and observed using an infrared PMT with a filter excluding light withmore » wavelength <715 nm. Performing a simple counting experiment, there were indications of NIR scintillation. Further analysis is in progress.« less

Intrinsic white-light emission from layered hybrid perovskites.

PubMed

Dohner, Emma R; Jaffe, Adam; Bradshaw, Liam R; Karunadasa, Hemamala I

2014-09-24

We report on the second family of layered perovskite white-light emitters with improved photoluminescence quantum efficiencies (PLQEs). Upon near-ultraviolet excitation, two new Pb-Cl and Pb-Br perovskites emit broadband "cold" and "warm" white light, respectively, with high color rendition. Emission from large, single crystals indicates an origin from the bulk material and not surface defect sites. The Pb-Br perovskite has a PLQE of 9%, which is undiminished after 3 months of continuous irradiation. Our mechanistic studies indicate that the emission has contributions from strong electron-phonon coupling in a deformable lattice and from a distribution of intrinsic trap states. These hybrids provide a tunable platform for combining the facile processability of organic materials with the structural definition of crystalline, inorganic solids.

Ballet of Loops

NASA Image and Video Library

2018-06-11

Giant, bright coronal loops trace out the magnetic field lines above an active region from June 4-6, 2018. The wavelength of extreme ultraviolet light shown here is emitted by ionized iron travelling along the field lines, super-heated to approximately 1 million degrees K. Coronal loops were not seen in this level of detail until the Solar Dynamics Observatory was launched in 2010 and came online, giving solar scientists new data with which to study the Sun and its processes. https://photojournal.jpl.nasa.gov/catalog/PIA22508

Luminescent properties of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} and its potential application in white light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhijun, E-mail: wangzhijunmail@yahoo.com.cn; Li, Panlai; Li, Ting

2013-06-01

Graphical abstract: Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} phosphor can be effectively excited by an ultraviolet and near-ultraviolet light, and produce a bright blue emission centered at 436 nm. The CIE chromaticity coordinations (x, y) of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+}(NSCE)/Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}(LSSE) vary with the molar ratio of the two constituents. When NSCE/LSSE is 1:3, the CIE chromaticity coordination is (0.332, 0.346), which is close to that of the natural sunlight (0.33, 0.33). The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a promising blue phosphor for UV chip-based multi-phosphor converted white light emitting diodes. Highlights: ► Na{sub 2}CaSiO{sub 4}:Eu{supmore » 2+} shows the blue emission with a peak at 436 nm and broad excitation band in the UV/n-UV range. ► White light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor with the Li{sub 2}SrSiO{sub 4}:Eu{sup 2+} yellow phosphor. ► Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} would be a promising blue phosphor candidate for UV chip-based multi-phosphor converted white LEDs. - Abstract: A novel blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is synthesized by a high temperature solid-state reaction, and its luminescent properties are systematically studied. Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} can be effectively excited by the 354 nm radiation, and create blue emission (436 nm). The emission intensity of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is influenced by the Eu{sup 2+} doping content, and the optimal doping content is 1.5%, and the concentration quenching mechanism of Eu{sup 2+} in Na{sub 2}CaSiO{sub 4} can be attributed to the multipolar interaction. The white light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} with the yellow phosphor Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}. The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a potential blue emitting phosphor for UV chip-based multi-phosphor converted white light emitting diodes.« less

SUMER: Solar Ultraviolet Measurements of Emitted Radiation

NASA Technical Reports Server (NTRS)

Wilhelm, K.; Axford, W. I.; Curdt, W.; Gabriel, A. H.; Grewing, M.; Huber, M. C. E.; Jordan, S. D.; Kuehne, M.; Lemaire, P.; Marsch, E.

1992-01-01

The experiment Solar Ultraviolet Measurements of Emitted Radiation (SUMER) is designed for the investigations of plasma flow characteristics, turbulence and wave motions, plasma densities and temperatures, structures and events associated with solar magnetic activity in the chromosphere, the transition zone and the corona. Specifically, SUMER will measure profiles and intensities of Extreme Ultraviolet (EUV) lines emitted in the solar atmosphere ranging from the upper chromosphere to the lower corona; determine line broadenings, spectral positions and Doppler shifts with high accuracy, provide stigmatic images of selected areas of the Sun in the EUV with high spatial, temporal and spectral resolution and obtain full images of the Sun and the inner corona in selectable EUV lines, corresponding to a temperature from 10,000 to more than 1,800,000 K.

Full-scale characterization of UVLED Al(x)Ga(1-x)N nanowires via advanced electron microscopy.

PubMed

Phillips, Patrick J; Carnevale, Santino D; Kumar, Rajan; Myers, Roberto C; Klie, Robert F

2013-06-25

III-Nitride semiconductor heterostructures continue to attract a great deal of attention due to the wide range of wavelengths at which they can emit light, and the subsequent desire to employ them in optoelectronic applications. Recently, a new type of pn-junction which relies on polarization-induced doping has shown promise for use as an ultraviolet light emitting diode (UVLED); nanowire growth of this device has been successfully demonstrated. However, as these devices are still in their infancy, in order to more fully understand their physical and electronic properties, they require a multitude of characterization techniques. Specifically, the present contribution will discuss the application of advanced scanning transmission electron microscopy (STEM) to AlxGa1-xN UVLED nanowires. In addition to structural data, chemical and electronic properties will also be probed through various spectroscopy techniques, with the focus remaining on practically applying the knowledge gained via STEM to the growth procedures in order to optimize device peformance.

Ambipolar light-emitting organic single-crystal transistors with a grating resonator

PubMed Central

Maruyama, Kenichi; Sawabe, Kosuke; Sakanoue, Tomo; Li, Jinpeng; Takahashi, Wataru; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi

2015-01-01

Electrically driven organic lasers are among the best lasing devices due to their rich variety of emission colors as well as other advantages, including printability, flexibility, and stretchability. However, electrically driven lasing in organic materials has not yet been demonstrated because of serious luminescent efficiency roll-off under high current density. Recently, we found that the organic ambipolar single-crystal transistor is an excellent candidate for lasing devices because it exhibits less efficient roll-off, high current density, and high luminescent efficiency. Although a single-mode resonator combined with light-emitting transistors (LETs) is necessary for electrically driven lasing devices, the fragility of organic crystals has strictly limited the fabrication of resonators, and LETs with optical cavities have never been fabricated until now. To achieve this goal, we improved the soft ultraviolet-nanoimprint lithography method and demonstrated electroluminescence from a single-crystal LET with a grating resonator, which is a crucial milestone for future organic lasers. PMID:25959455

Lithium hydride doped intermediate connector for high-efficiency and long-term stable tandem organic light-emitting diodes.

PubMed

Ding, Lei; Tang, Xun; Xu, Mei-Feng; Shi, Xiao-Bo; Wang, Zhao-Kui; Liao, Liang-Sheng

2014-10-22

Lithium hydride (LiH) is employed as a novel n-dopant in the intermediate connector for tandem organic light-emitting diodes (OLEDs) because of its easy coevaporation with other electron transporting materials. The tandem OLEDs with two and three electroluminescent (EL) units connected by a combination of LiH doped 8-hydroxyquinoline aluminum (Alq3) and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) demonstrate approximately 2-fold and 3-fold enhancement in current efficiency, respectively. In addition, no extra voltage drop across the intermediate connector is observed. Particularly, the lifetime (T75%) in the tandem OLED with two and three EL units is substantially improved by 3.8 times and 7.4 times, respectively. The doping effect of LiH into Alq3, the charge injection, and transport characteristics of LiH-doped Alq3 are further investigated by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

InGaN/GaN blue light emitting diodes using Al-doped ZnO grown by atomic layer deposition as a current spreading layer

NASA Astrophysics Data System (ADS)

Kong, Bo Hyun; Cho, Hyung Koun; Kim, Mi Yang; Choi, Rak Jun; Kim, Bae Kyun

2011-07-01

For the fabrication of InGaN/GaN multiple quantum well-based blue light emitting diodes (LEDs) showing large area emission, transparent Al-doped ZnO (AZO) films grown by atomic layer deposition at relatively low temperatures were introduced as current spreading layers. These AZO films with an Al content of 3 at% showed a low electrical resistivity of <10 -3-10 -4 Ω cm, a high carrier concentration of >10 20 cm -3, and an excellent optical transmittance of ˜85%, in spite of the low growth temperature. The deposition of the AZO film induced an intense blue emission from the whole surface of the p-GaN and weak ultraviolet emission from the n-AZO and p-GaN junction. At an injection current of 50 mA, the output powers of the blue LEDs were 1760 and 1440 mcd for the samples with AZO thicknesses of 100 and 300 nm, respectively.

Light-Emitting Photon-Upconversion Nanoparticles in the Generation of Transdermal Reactive-Oxygen Species.

PubMed

Prieto, Martin; Rwei, Alina Y; Alejo, Teresa; Wei, Tuo; Lopez-Franco, Maria Teresa; Mendoza, Gracia; Sebastian, Victor; Kohane, Daniel S; Arruebo, Manuel

2017-12-06

Common photosensitizers used in photodynamic therapy do not penetrate the skin effectively. In addition, the visible blue and red lights used to excite such photosensitizers have shallow penetration depths through tissue. To overcome these limitations, we have synthesized ultraviolet- and visible-light-emitting, energy-transfer-based upconversion nanoparticles and coencapsulated them inside PLGA-PEG (methoxy poly(ethylene glycol)-b-poly(lactic-co-glycolic acid)) nanoparticles with the photosensitizer protoporphyrin IX. Nd 3+ has been introduced as a sensitizer in the upconversion nanostructure to allow its excitation at 808 nm. The subcytotoxic doses of the hybrid nanoparticles have been evaluated on different cell lines (i.e., fibroblasts, HaCaT, THP-1 monocytic cell line, U251MG (glioblastoma cell line), and mMSCs (murine mesenchymal stem cells). Upon NIR (near infrared)-light excitation, the upconversion nanoparticles emitted UV and VIS light, which consequently activated the generation of reactive-oxygen species (ROS). In addition, after irradiating at 808 nm, the resulting hybrid nanoparticles containing both upconversion nanoparticles and protoporphyrin IX generated 3.4 times more ROS than PLGA-PEG nanoparticles containing just the same dose of protoporphyrin IX. Their photodynamic effect was also assayed on different cell cultures, demonstrating their efficacy in selectively killing treated and irradiated cells. Compared to the topical application of the free photosensitizer, enhanced skin permeation and penetration were observed for the nanoparticulate formulation, using an ex vivo human-skin-permeation experiment. Whereas free protoporphyrin IX remained located at the outer layer of the skin, nanoparticle-encapsulated protoporphyrin IX was able to penetrate through the epidermal layer slightly into the dermis.

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Lane, Arthur L. (Inventor); Bhartia, Rohit (Inventor); Reid, Ray D. (Inventor)

2017-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

Spectroscopic Chemical Analysis Methods and Apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Lane, Arthur L. (Inventor); Reid, Ray D. (Inventor); Bhartia, Rohit (Inventor)

2018-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

Riemann sum method for non-line-of-sight ultraviolet communication in noncoplanar geometry

NASA Astrophysics Data System (ADS)

Song, Peng; Zhou, Xianli; Song, Fei; Zhao, Taifei; Li, Yunhong

2017-12-01

The non-line-of-sight ultraviolet (UV) communication relies on the scattering common volume, however, it is difficult to carry out the triple integral operation of the scattering common volume. Based on UV single-scattering propagation theory and the spherical coordinate, we propose to use the Riemann sum method (RSM) to analyze the link path loss (PL) of UV communication system in noncoplanar geometries, and carried out related simulations. In addition, an outdoor testbed using UV light-emitting diode was set up to provide support for the validity of the RSM. When the elevation angles of the transmitter or the receiver are small, using RSM, the channel PL and temporal response of UV communication systems can be effectively and efficiently calculated. It is useful in UV embedded system design.

Defining the unknowns of sonoluminescence

NASA Astrophysics Data System (ADS)

Barber, Bradley P.; Hiller, Robert A.; Löfstedt, Ritva; Putterman, Seth J.; Weninger, Keith R.

1997-03-01

As the intensity of a standing sound wave is increased the pulsations of a bubble of gas trapped at a velocity node attain sufficient amplitude so as to emit picosecond flashes of light with a broadband spectrum that increases into the ultraviolet. The acoustic resonator can be tuned so that the flashes of light occur with a clocklike regularity: one flash for each cycle of sound with a jitter in the time between flashes that is also measured in picoseconds. This phenomenon (sonoluminescence or “SL”) is remarkable because it is the only means of generating picosecond flashes of light that does not use a laser and the input acoustic energy density must be concentrated by twelve orders of magnitude in order to produce light. Light scattering measurements indicate that the bubble wall is collapsing at more than 4 times the ambient speed of sound in the gas just prior to the light emitting moment when the gas has been compressed to a density determined by its van der Waals hard core. Experiments indicate that the collapse is remarkably spherical, water is the best fluid for SL, some noble gas is essential for stable SL, and that the light intensity increases as the ambient temperature is lowered. In the extremely stable experimental configuration consisting of an air bubble in water, measurements indicate that the bubble chooses an ambient radius that is not explained by mass diffusion. Experiments have not yet been able to map out the complete spectrum because above 6 eV it is obscured by the cutoff imposed by water, and furthermore experiments have only determined an upper bound on the flash widths. In addition to the above puzzles, the theory for the light emitting mechanism is still open. The scenario of a supersonic bubble collapse launching an imploding shock wave which ionizes the bubble contents so as to cause it to emit Bremsstrahlung radiation is the best candidate theory but it has not been shown how to extract from it the richness of this phenomenon. Most exciting is the issue of whether SL is a classical effect or whether Planck's constant should be invoked to explain how energy which enters a medium at the macroscopic scale holds together and focuses so as to be emitted at the microscopic scale.

Ultraviolet Electroluminescence from ZnS@ZnO Core-Shell Nanowires/p-GaN Introduced by Exciton Localization.

PubMed

Fang, Xuan; Wei, Zhipeng; Yang, Yahui; Chen, Rui; Li, Yongfeng; Tang, Jilong; Fang, Dan; Jia, Huimin; Wang, Dengkui; Fan, Jie; Ma, Xiaohui; Yao, Bin; Wang, Xiaohua

2016-01-27

We investigate the electroluminescence (EL) from light emitting diodes (LEDs) of ZnO nanowires/p-GaN structure and ZnS@ZnO core-shell nanowires/p-GaN structure. With the increase of forward bias, the emission peak of ZnO nanowires/p-GaN structure heterojunction shows a blue-shift, while the ZnS@ZnO core-shell nanowires/p-GaN structure demonstrates a changing EL emission; the ultraviolet (UV) emission at 378 nm can be observed. This discrepancy is related to the localized states introduced by ZnS particles, which results in a different carrier recombination process near the interfaces of the heterojunction. The localized states capture the carriers in ZnO nanowires and convert them to localized excitons under high forward bias. A strong UV emission due to localized excitons can be observed. Our results indicated that utilizing localized excitons should be a new route toward ZnO-based ultraviolet LEDs with high efficiency.

Steering attosecond electron wave packets with light.

PubMed

Kienberger, R; Hentschel, M; Uiberacker, M; Spielmann, Ch; Kitzler, M; Scrinzi, A; Wieland, M; Westerwalbesloh, Th; Kleineberg, U; Heinzmann, U; Drescher, M; Krausz, F

2002-08-16

Photoelectrons excited by extreme ultraviolet or x-ray photons in the presence of a strong laser field generally suffer a spread of their energies due to the absorption and emission of laser photons. We demonstrate that if the emitted electron wave packet is temporally confined to a small fraction of the oscillation period of the interacting light wave, its energy spectrum can be up- or downshifted by many times the laser photon energy without substantial broadening. The light wave can accelerate or decelerate the electron's drift velocity, i.e., steer the electron wave packet like a classical particle. This capability strictly relies on a sub-femtosecond duration of the ionizing x-ray pulse and on its timing to the phase of the light wave with a similar accuracy, offering a simple and potentially single-shot diagnostic tool for attosecond pump-probe spectroscopy.

Protocol for Determining Ultraviolet Light Emitting Diode (UV-LED) Fluence for Microbial Inactivation Studies.

PubMed

Kheyrandish, Ataollah; Mohseni, Madjid; Taghipour, Fariborz

2018-06-15

Determining fluence is essential to derive the inactivation kinetics of microorganisms and to design ultraviolet (UV) reactors for water disinfection. UV light emitting diodes (UV-LEDs) are emerging UV sources with various advantages compared to conventional UV lamps. Unlike conventional mercury lamps, no standard method is available to determine the average fluence of the UV-LEDs, and conventional methods used to determine the fluence for UV mercury lamps are not applicable to UV-LEDs due to the relatively low power output, polychromatic wavelength, and specific radiation profile of UV-LEDs. In this study, a method was developed to determine the average fluence inside a water suspension in a UV-LED experimental setup. In this method, the average fluence was estimated by measuring the irradiance at a few points for a collimated and uniform radiation on a Petri dish surface. New correction parameters were defined and proposed, and several of the existing parameters for determining the fluence of the UV mercury lamp apparatus were revised to measure and quantify the collimation and uniformity of the radiation. To study the effect of polychromatic output and radiation profile of the UV-LEDs, two UV-LEDs with peak wavelengths of 262 and 275 nm and different radiation profiles were selected as the representatives of typical UV-LEDs applied to microbial inactivation. The proper setup configuration for microorganism inactivation studies was also determined based on the defined correction factors.

Room temperature high circular dichroism ultraviolet lasing from planar spiral metal-GaN nanowire cavity (Conference Presentation)

NASA Astrophysics Data System (ADS)

Shih, Min-Hsiung

2016-09-01

Circularly polarized light and chiroptical effect have received considerable attention in advanced photonic and electronic technologies including optical spintronics, quantum-based optical information processing and communication, and high-efficiency liquid crystal display backlights. Moreover, the development of circularly polarized photon sources has played a major role in circular dichroism (CD) spectroscopy, which is important for analyses of optically active molecules, chiral synthesis in biology and chemistry, and ultrafast magnetization control. However, the conventional collocation of light-emitting devices and additional circular-polarization converters that produce circularly polarized beams makes the setup bulky and hardly compatible with nanophotonic devices in ultrasmall scales. In fact, the direct generation of circularly polarized photons may simplify the system integration, compact the setup, lower the cost of external components, and perhaps enhance the power efficiency. In this work, with the spiral-type metal-gallium nitride (GaN) nanowire cavity, we demonstrated an ultrasmall semiconductor laser capable of emitting circularly-polarized photons. The left- and right-hand spiral metal nanowire cavities with varied periods were designed at ultraviolet wavelengths to achieve the high quality factor circular dichroism metastructures. The dissymmetry factors characterizing the degrees of circular polarizations of the left- and right-hand chiral lasers were 1.4 and -1.6 (2 if perfectly circular polarized), respectively. The results show that the chiral cavities with only 5 spiral periods can achieve lasing signals with decently high degrees of circular polarizations.

New transparent flexible nanopaper as ultraviolet filter based on red emissive Eu(III) nanofibrillated cellulose

NASA Astrophysics Data System (ADS)

Zhang, Zhao; Chang, Hui; Xue, Bailiang; Han, Qing; Lü, Xingqiang; Zhang, Sufeng; Li, Xinping; Zhu, Xunjin; Wong, Wai-kwok; Li, Kecheng

2017-11-01

A new kind of highly red emissive and transparent nanopapers as ultraviolet filter are produced from lanthanide complex Eu(TTA)3(H2O)2 grafted nanofibrillated cellulose (NFC) by a filtration process using a Buchner funnel. The nanopapers Eu-NFC 1-4 with different thickness (0.023 mm, 1; 0.04 mm, 2; 0.081 mm, 3 and 0.1 mm, 4) possess a fibres with dimensions of approximately 50 nm in diameter and several micrometres in length. Those nanopapers exhibit excellent ultraviolet A (UVA; 320-400 nm) filter property and high optical transmittance (>73% at wavelength of 600 nm). The presence of Eu(TTA)3(H2O)2 in Eu-NFC nanopapers can block 97% UVA (at 348 nm) light and convert it into pure red emission (CIE: x = 0.663, y = 0.333) through the efficient triplet-triplet energy transfer process. The efficient red emission can significantly improve the photo-stability of β-diketones type UVA filter. It can sustain for 10 h without decomposition under UV irradiation at 365 nm, which makes it possible to be applied in UVA filters. Moreover, its low coefficient of thermal expansion (CTE: 6.39 ppm K-1 of nanocellulose), is superior to petroleum-based materials for red organic light-emitting devices.

[The research of UV-responsive sensitivity enhancement of fluorescent coating films by MgF2 layer].

PubMed

Lu, Zhong-Rong; Ni, Zheng-Ji; Tao, Chun-Xian; Hong, Rui-Jin; Zhang, Da-Wei; Huang, Yuan-Shen

2014-03-01

A low cost and less complicated expansion approach of wavelength responses with a Lumogen phosphor coating was adopted, as they increased the quantum efficiency of CCD and CMOS detectors in ultra-violet by absorbing UV light and then re emitting visible light. In this paper, the sensitivity enhancement of fluorescence coatings was studied by adding an anti-reflection film or barrier film to reduce the loss of the scattering and reflection on the incident interface. The Lumogen and MgF2/Lumogen film were deposited on quartz glasses by physical vacuum deposition. The surface morphology, transmittance spectrum, reflectance spectrum and fluorescence emission spectrum were obtained by atomic force microscope (AFM), spectrophotometer and fluorescence spectrometer, respectively. The results indicated that MgF2 film had obvious positive effect on reducing scattering and reflection loss in 500-700 nm, and enhancing the absorption of Lumogen coating in ultraviolet spectrum. Meanwhile, the fluorescent emission intensity had a substantial increase by smoothing the film surface and thus reducing the light scattering. At the same time, the MgF2 layer could protect Lumogen coating from damaging and contamination, which give a prolong lifetime of the UV-responsive CCD sensors with fluorescent coatings.

Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

NASA Astrophysics Data System (ADS)

Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

2017-05-01

Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

Dynamic photolytical actinometry of the vacuum-ultraviolet radiation produced by multichannel surface discharges of submicrosecond duration.

PubMed

Tcheremiskine, V I; Uteza, O P; Sentis, M L; Mikheev, L D

2007-06-01

Absolute measurements of the vacuum-ultraviolet (VUV) radiation power produced by a planar broadband optical source of submicrosecond light pulse duration are carried out in the transient regime of formation of a photodissociation (bleaching) wave in a photodecomposing absorptive medium. The source is based on a multichannel surface discharge initiated in ArN(2) gas mixtures on the area of approximately 0.1 m(2). The energetic characteristics of the produced VUV radiation are determined on the basis of spatially and temporally resolved observations of the pulsed photolysis of XeF(2) vapors. It is shown that the photon flux intensity produced by the source within the spectral range of 120-200 nm reaches 1.1 x 10(23) photonscm(2) s corresponding to the effective brightness temperature of discharge plasma of 20 kK and to the intrinsic efficiency of the discharge VUV emission of 3.2%. Numerical simulations of the photolysis process show a rather weak sensitivity of the results to the fraction of discharge radiation emitted into the line spectrum, as well as to the angular distribution of emitted radiation. The spectral band of measurements can be selected according to the choice of parent photodecomposing particles.

Why Do Simple Molecules with "Isolated" Phenyl Rings Emit Visible Light?

PubMed

Zhang, Haoke; Zheng, Xiaoyan; Xie, Ni; He, Zikai; Liu, Junkai; Leung, Nelson L C; Niu, Yingli; Huang, Xuhui; Wong, Kam Sing; Kwok, Ryan T K; Sung, Herman H Y; Williams, Ian D; Qin, Anjun; Lam, Jacky W Y; Tang, Ben Zhong

2017-11-15

π-Bonds connected with aromatic rings were generally believed as the standard structures for constructing highly efficient fluorophores. Materials without these typical structures, however, exhibited only low fluorescence quantum yields and emitted in the ultraviolet spectral region. In this work, three molecules, namely bis(2,4,5-trimethylphenyl)methane, 1,1,2,2-tetrakis(2,4,5-trimethylphenyl)ethane, and 1,1,2,2-tetraphenylethane, with nonconjugated structures and isolated phenyl rings were synthesized and their photophysical properties were systematically investigated. Interestingly, the emission spectra of these three molecules could be well extended to 600 nm with high solid-state quantum yields of up to 70%. Experimental and theoretical analyses proved that intramolecular through-space conjugation between the "isolated" phenyl rings played an important role for this abnormal phenomenon.

Mapping the solar wind HI outflow velocity in the inner heliosphere by coronagraphic ultraviolet and visible-light observations

NASA Astrophysics Data System (ADS)

Dolei, S.; Susino, R.; Sasso, C.; Bemporad, A.; Andretta, V.; Spadaro, D.; Ventura, R.; Antonucci, E.; Abbo, L.; Da Deppo, V.; Fineschi, S.; Focardi, M.; Frassetto, F.; Giordano, S.; Landini, F.; Naletto, G.; Nicolini, G.; Nicolosi, P.; Pancrazzi, M.; Romoli, M.; Telloni, D.

2018-05-01

We investigated the capability of mapping the solar wind outflow velocity of neutral hydrogen atoms by using synergistic visible-light and ultraviolet observations. We used polarised brightness images acquired by the LASCO/SOHO and Mk3/MLSO coronagraphs, and synoptic Lyα line observations of the UVCS/SOHO spectrometer to obtain daily maps of solar wind H I outflow velocity between 1.5 and 4.0 R⊙ on the SOHO plane of the sky during a complete solar rotation (from 1997 June 1 to 1997 June 28). The 28-days data sequence allows us to construct coronal off-limb Carrington maps of the resulting velocities at different heliocentric distances to investigate the space and time evolution of the outflowing solar plasma. In addition, we performed a parameter space exploration in order to study the dependence of the derived outflow velocities on the physical quantities characterising the Lyα emitting process in the corona. Our results are important in anticipation of the future science with the Metis instrument, selected to be part of the Solar Orbiter scientific payload. It was conceived to carry out near-sun coronagraphy, performing for the first time simultaneous imaging in polarised visible-light and ultraviolet H I Lyα line, so providing an unprecedented view of the solar wind acceleration region in the inner corona. The movie (see Sect. 4.2) is available at https://www.aanda.org

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhaofeng; State Key Laboratory of Solid Lubrication, Lanzhou Institute of Chemical Physics, Chinese Academy of Sciences, Lanzhou 730000; Li, Yezhou, E-mail: leelienzoey@gmail.com

Highlights: • A novel blue-emitting phosphor Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was reported. • Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} exhibited excellent thermal and irradiation stability. • Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} was found to possess high color purity. - Abstract: In this work, we synthesized Tm{sup 3+} doped Li{sub 4}SrCa(SiO{sub 4}){sub 2} phosphors and investigated their photoluminescence properties under the excitation of ultraviolet and vacuum ultraviolet lights. The crystal structure analysis and variation of cell parameters confirm that Tm{sup 3+} ions have been successfully doped in the structure of Li{sub 4}SrCa(SiO{sub 4}){sub 2} host by occupying the sites of Ca{supmore » 2+} with the coordination number of 6. The luminescence results suggest that Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} is a good blue-emitting phosphor when excited by ultraviolet and vacuum ultraviolet irradiations. In addition, it is observed that there is nearly no degradation for Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} after undergoing thermal and irradiation treatments. Possible mechanisms for the luminescence processes are proposed on the basis of the discussion of excitation and emission spectra. In particular, the emission color of Li{sub 4}SrCa(SiO{sub 4}){sub 2}:Tm{sup 3+} by excitation of 147 and 172 nm irradiations is very close to the standard blue color, suggesting that it could be potentially applied in plasma display panels and mercury-free fluorescence lamps.« less

Coupling Light Emitting Diodes with Photocatalyst-Coated Optical Fibers Improves Quantum Yield of Pollutant Oxidation.

PubMed

Ling, Li; Tugaoen, Heather; Brame, Jonathon; Sinha, Shahnawaz; Li, Chuanhao; Schoepf, Jared; Hristovski, Kiril; Kim, Jae-Hong; Shang, Chii; Westerhoff, Paul

2017-11-21

A photocatalyst-coated optical fiber was coupled with a 318 nm ultraviolet-A light emitting diode, which activated the photocatalysts by interfacial photon-electron excitation while minimizing photonic energy losses due to conventional photocatalytic barriers. The light delivery mechanism was explored via modeling of evanescent wave energy produced upon total internal reflection and photon refraction into the TiO 2 surface coating. This work explores aqueous phase LED-irradiated optical fibers for treating organic pollutants and for the first time proposes a dual-mechanistic approach to light delivery and photocatalytic performance. Degradation of a probe organic pollutant was evaluated as a function of optical fiber coating thickness, fiber length, and photocatalyst attachment method and compared against the performance of an equivalent catalyst mass in a completely mixed slurry reactor. Measured and simulated photon fluence through the optical fibers decreased as a function of fiber length, coating thickness, or TiO 2 mass externally coated on the fiber. Thinner TiO 2 coatings achieved faster pollutant removal rates from solution, and dip coating performed better than sol-gel attachment methods. TiO 2 attached to optical fibers achieved a 5-fold higher quantum yield compared against an equivalent mass of TiO 2 suspended in a slurry solution.

Characterization and Luminescence Properties of Color-Tunable Dy3+-Doped BaY2ZnO5 Nanophosphors

NASA Astrophysics Data System (ADS)

Sonika; Khatkar, S. P.; Khatkar, Avni; Kumar, Rajesh; Taxak, V. B.

2015-01-01

Dy3+-doped BaY2ZnO5 nanophosphors were successfully synthesized by use of a solution combustion process. The effects of sintering temperature and dysprosium concentration on the structural and luminescence characteristics of the phosphors were investigated. X-ray diffraction (XRD) analysis confirmed the formation of pure orthorhombic BaY2ZnO5 with the space group Pbnm at 1100°C. Morphological investigation revealed spherical nanoparticles with smooth surfaces. The luminescence features of the nanophosphor were studied by use of photoluminescence excitation (PLE) and photoluminescence emission (PL), with luminescence decay curves and color ( x, y) coordinates. On excitation at 355 nm, BaY2ZnO5 nanophosphor doped with trivalent dysprosium ion emits white light as a mixture of blue (4F9/2 → 6H15/2) and yellow (4F9/2 → 6H13/2) emission. Concentration quenching is explained on the basis of cross-relaxation between intermediate Dy3+ states. Thus, BaY2ZnO5:Dy3+ nanophosphor may be suitable for producing efficient white light for ultraviolet-light-emitting diodes (UV-LEDs), fluorescent lamps, and a variety of optical display panels.

n/a

NASA Image and Video Library

1962-04-27

The Apollo 16 Command Module splashed down in the Pacific Ocean on April 27, 1972 after an 11-day moon exploration mission. The 3-man crew is shown here aboard the rescue ship, USS Horton. From left to right are: Mission Commander John W. Young, Lunar Module pilot Charles M. Duke, and Command Module pilot Thomas K. Mattingly II. The sixth manned lunar landing mission, the Apollo 16 (SA-511) lifted off on April 16, 1972. The Apollo 16 mission continued the broad-scale geological, geochemical, and geophysical mapping of the Moon’s crust, begun by the Apollo 15, from lunar orbit. This mission marked the first use of the Moon as an astronomical observatory by using the ultraviolet camera/spectrograph which photographed ultraviolet light emitted by Earth and other celestial objects. The Lunar Roving Vehicle, developed by the Marshall Space Flight Center, was also used.

Performance optimization of AlGaN-based LEDs by use of ultraviolet-transparent indium tin oxide: Effect of in situ contact treatment

NASA Astrophysics Data System (ADS)

Tu, Wenbin; Chen, Zimin; Zhuo, Yi; Li, Zeqi; Ma, Xuejin; Wang, Gang

2018-05-01

Ultraviolet (UV)-transparent indium tin oxide (ITO) grown by metal–organic chemical vapor deposition (MOCVD) is used as the current-spreading layer for 368 nm AlGaN-based light-emitting diodes (LEDs). By performing in situ contact treatment on the LED/ITO interface, the morphology, resistivity, and contact resistance of electrodes become controllable. Resistivity of 2.64 × 10‑4 Ω cm and transmittance at 368 nm of 95.9% are realized for an ITO thin film grown with Sn-purge in situ treatment. Therefore, the high-power operating voltage decreases from 3.94 V (without treatment) to 3.83 V (with treatment). The improved performance is attributed to the lowering of the tunneling barrier at the LED/ITO interface.

Evaluating the impact of LED bulb development on the economic viability of ultraviolet technology for disinfection.

PubMed

Ibrahim, Mohamed A S; MacAdam, Jitka; Autin, Olivier; Jefferson, Bruce

2014-01-01

Ultraviolet (UV) technologies have been very successful in disinfection applications due to their ability to inactivate microorganisms without producing harmful disinfection by-products. However, there have been a number of concerns associated with the use of conventional UV systems such as hazardous mercury content, high capital investment and reduced electrical efficiency. These concerns have set limitations for the use of UV processes. The study evaluates the development of light emitting diode (LED) technology as an alternative UV source over the last 5 years, analyses the projections provided by the researchers and UV LED manufacturers and presents the information in a cost model with the aim to predict the timeline at which UV LED will compete with traditional UV low pressure high output technology in the commercial market at full-scale residential and industrial disinfection applications.

Effects of solar flares on the ionosphere of Mars.

PubMed

Mendillo, Michael; Withers, Paul; Hinson, David; Rishbeth, Henry; Reinisch, Bodo

2006-02-24

All planetary atmospheres respond to the enhanced x-rays and ultraviolet (UV) light emitted from the Sun during a flare. Yet only on Earth are observations so continuous that the consequences of these essentially unpredictable events can be measured reliably. Here, we report observations of solar flares, causing up to 200% enhancements to the ionosphere of Mars, as recorded by the Mars Global Surveyor in April 2001. Modeling the altitude dependence of these effects requires that relative enhancements in the soft x-ray fluxes far exceed those in the UV.

The Influence of the Environment and Clothing on Human Exposure to Ultraviolet Light

PubMed Central

Liu, Jin; Zhang, Wei

2015-01-01

Objection The aim of this study is to determine the effect of clothing and the environment on human exposure to ultraviolet light. Methods The ultraviolet (ultraviolet A and ultraviolet B) light intensity was measured, and air quality parameters were recorded in 2014 in Beijing, China. Three types of clothing (white polyester cloth, pure cotton white T-shirt, and pure cotton black T-shirt) were individually placed on a mannequin. The ultraviolet (ultraviolet A and ultraviolet B) light intensities were measured above and beneath each article of clothing, and the percentage of ultraviolet light transmission through the clothing was calculated. Results (1) The ultraviolet light transmission was significantly higher through white cloth than through black cloth; the transmission was significantly higher through polyester cloth than through cotton. (2) The weather significantly influenced ultraviolet light transmission through white polyester cloth; transmission was highest on clear days and lowest on overcast days (ultraviolet A: P=0.000; ultraviolet B: P=0.008). (3) Air quality parameters (air quality index and particulate matter 2.5 and 10) were inversely related to the ultraviolet light intensity that reached the earth’s surface. Ultraviolet B transmission through white polyester cloth was greater under conditions of low air pollution compared with high air pollution. Conclusion Clothing color and material and different types of weather affected ultraviolet light transmission; for one particular cloth, the transmission decreased with increasing air pollution. PMID:25923778

The influence of the environment and clothing on human exposure to ultraviolet light.

PubMed

Liu, Jin; Zhang, Wei

2015-01-01

The aim of this study is to determine the effect of clothing and the environment on human exposure to ultraviolet light. The ultraviolet (ultraviolet A and ultraviolet B) light intensity was measured, and air quality parameters were recorded in 2014 in Beijing, China. Three types of clothing (white polyester cloth, pure cotton white T-shirt, and pure cotton black T-shirt) were individually placed on a mannequin. The ultraviolet (ultraviolet A and ultraviolet B) light intensities were measured above and beneath each article of clothing, and the percentage of ultraviolet light transmission through the clothing was calculated. (1) The ultraviolet light transmission was significantly higher through white cloth than through black cloth; the transmission was significantly higher through polyester cloth than through cotton. (2) The weather significantly influenced ultraviolet light transmission through white polyester cloth; transmission was highest on clear days and lowest on overcast days (ultraviolet A: P=0.000; ultraviolet B: P=0.008). (3) Air quality parameters (air quality index and particulate matter 2.5 and 10) were inversely related to the ultraviolet light intensity that reached the earth's surface. Ultraviolet B transmission through white polyester cloth was greater under conditions of low air pollution compared with high air pollution. Clothing color and material and different types of weather affected ultraviolet light transmission; for one particular cloth, the transmission decreased with increasing air pollution.

Feasibility of ultraviolet-light-emitting diodes as an alternative light source for photocatalysis.

PubMed

Levine, Lanfang H; Richards, Jeffrey T; Coutts, Janelle L; Soler, Robert; Maxik, Fred; Wheeler, Raymond M

2011-09-01

The objective of this study was to determine whether ultraviolet-light-emitting diodes (UV-LEDs) could serve as an efficient photon source for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A (lambda max = 365 nm) LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp for a bench scale annular reactor packed with silica-titania composite (STC) pellets. Lighting and thermal properties of the module were characterized to assess its uniformity and total irradiance. A forward current (I(F)) of 100 mA delivered an average irradiance of 4.0 mW cm(-2) at a distance of 8 mm, which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED and BLB reactors were tested for the oxidization of ethanol (50 ppm(v)) in a continuous-flow-through mode with 0.94 sec residence time. At the same average irradiance, the UV-A LED reactor resulted in a lower CO2 production rate (19.8 vs. 28.6 nmol L(-1) s(-1)), lower ethanol removal (80% vs. 91%), and lower mineralization efficiency (28% vs. 44%) than the UV-A BLB reactor. Ethanol mineralization was enhanced with the increase of the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED reactor relative to the BLB reactor at the same average irradiance could be attributed to the nonuniform irradiance over the photocatalyst, that is, a portion of the catalyst was exposed to less than the average irradiance. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off" feature for periodic irradiation. Nevertheless, our results also showed that the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB, demonstrating that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

Generation of White Light from Dysprosium-Doped Strontium Aluminate Phosphor by a Solid-State Reaction Method

NASA Astrophysics Data System (ADS)

Sahu, Ishwar Prasad; Bisen, D. P.; Brahme, N.; Tamrakar, Raunak Kumar

2016-04-01

A single-host lattice, white light-emitting SrAl2O4:Dy3+ phosphor was synthesized by a solid-state reaction method. The crystal structure of prepared SrAl2O4:Dy3+ phosphor was in a monoclinic phase with space group P21. The chemical composition of the sintered SrAl2O4:Dy3+ phosphor was confirmed by the energy dispersive x-ray spectroscopy technique. Under ultra-violet excitation, the characteristic emissions of Dy3+ are peaking at 475 nm, 573 nm and 660 nm, originating from the transitions of 4F9/2 → 6H15/2, 4F9/2 →&!nbsp; 6H13/2 and 4F9/2 → 6H11/2 in the 4f9 configuration of Dy3+ ions. Commission International de I'Eclairage color coordinates of SrAl2O4:Dy3+ are suitable for white light-emitting phosphor. In order to investigate the suitability of the samples as white color light sources for industrial uses, correlated color temperature (CCT) and color rendering index (CRI) values were calculated. Values of CCT and CRI were found well within the defined acceptable range. Mechanoluminescence (ML) intensity of SrAl2O4:Dy3+ phosphor increased linearly with increasing impact velocity of the moving piston. Thus, the present investigation indicates piezo-electricity was responsible for producing ML in sintered SrAl2O4:Dy3+ phosphor. Decay rates of the exponential decaying period of the ML curves do not change significantly with impact velocity. The photoluminescence and ML results suggest that the synthesized SrAl2O4:Dy3+ phosphor was useful for the white light-emitting diodes and stress sensor respectively.

Synthesis and luminescence characterization of a new yellowish-orange phosphor: Ba2 B10 O17 :Sm3.

PubMed

Li, Jiangong; Yan, Huifang; Yan, Fengmei

2017-02-01

A new yellowish-orange emitting phosphor, Ba 2 B 10 O 17 :Sm 3 + for use as a white light-emitting diode (W-LED) was synthesized by a solid-state reaction method. The X-ray diffraction results indicated that a pure Ba 2 B 10 O 17 material was obtained. As a potential yellowish-orange luminescent material for W-LEDs, the Ba 2 B 10 O 17 :Sm 3 + phosphor could be excited effectively by near-ultraviolet (n-UV) light and exhibited yellowish-orange emission centered at 560 nm corresponding to the 4 G 5/2  →  6 H 5/2 transition of Sm 3 + ions. The optimum concentration of Sm 3 + ions in Ba 2 B 10 O 17 , critical transfer distance (Ra) and concentration quenching mechanism of the presented phosphor were investigated. Moreover, CIE chromaticity coordinates and color purity performance of the Ba 2 B 10 O 17 :Sm 3 + phosphor were also discussed. The present work suggests that the Ba 2 B 10 O 17 :Sm 3 + phosphor has potential as a type of yellowish-orange emitting phosphor. Copyright © 2016 John Wiley & Sons, Ltd. Copyright © 2016 John Wiley & Sons, Ltd.

The Photoluminescent Properties of New Cationic Iridium(III) Complexes Using Different Anions and Their Applications in White Light-Emitting Diodes.

PubMed

Yang, Hui; Meng, Guoyun; Zhou, Yayun; Tang, Huaijun; Zhao, Jishou; Wang, Zhengliang

2015-09-14

Three cationic iridium(III) complexes [Ir(ppy)₂(phen)][PF₆] (C1), [Ir(ppy)₂(phen)]₂SiF₆ (C2) and [Ir(ppy)₂(phen)]₂TiF₆ (C3) (ppy: 2-phenylpyridine, phen: 1, 10-phenanthroline) using different anions were synthesized and characterized by ¹H Nuclear magnetic resonance (¹HNMR), mass spectra (MS), Fourier transform infrared (FTIR) spectra and element analysis (EA). After the ultraviolet visible (UV-vis) absorption spectra, photoluminescent (PL) properties and thermal properties of the complexes were investigated, complex C1 and C3 with good optical properties and high thermal stability were used in white light-emitting diodes (WLEDs) as luminescence conversion materials by incorporation with 460 nm-emitting blue GaN chips. The integrative performances of the WLEDs fabricated with complex C1 and C3 are better than those fabricated with the widely used yellow phosphor Y₃Al₅O 12 :Ce 3+ (YAG). The color rendering indexes of the WLEDs with C1 and C3 are 82.0 and 82.6, the color temperatures of them are 5912 K and 3717 K, and the maximum power efficiencies of them are 10.61 Lm·W -1 and 11.41 Lm·W -1 , respectively.

Reflectance of polytetrafluoroethylene for xenon scintillation light

NASA Astrophysics Data System (ADS)

Silva, C.; Pinto da Cunha, J.; Pereira, A.; Chepel, V.; Lopes, M. I.; Solovov, V.; Neves, F.

2010-03-01

Gaseous and liquid xenon particle detectors are being used in a number of applications including dark matter search and neutrino-less double beta decay experiments. Polytetrafluoroethylene (PTFE) is often used in these detectors both as electrical insulator and as a light reflector to improve the efficiency of detection of scintillation photons. However, xenon emits in the vacuum ultraviolet (VUV) wavelength region (λ ≃175 nm) where the reflecting properties of PTFE are not sufficiently known. In this work, we report on measurements of PTFE reflectance, including its angular distribution, for the xenon scintillation light. Various samples of PTFE, manufactured by different processes (extruded, expanded, skived, and pressed) have been studied. The data were interpreted with a physical model comprising both specular and diffuse reflections. The reflectance obtained for these samples ranges from about 47% to 66% for VUV light. Other fluoropolymers, namely, ethylene tetrafluoroethylene (ETFE), fluorinated ethylene propylene (FEP), and perfluoro-alkoxyalkane (PFA) were also measured.

Beyond Extreme Ultra Violet (BEUV) Radiation from Spherically symmetrical High-Z plasmas

NASA Astrophysics Data System (ADS)

Yoshida, Kensuke; Fujioka, Shinsuke; Higashiguchi, Takeshi; Ugomori, Teruyuki; Tanaka, Nozomi; Kawasaki, Masato; Suzuki, Yuhei; Suzuki, Chihiro; Tomita, Kentaro; Hirose, Ryouichi; Eshima, Takeo; Ohashi, Hayato; Nishikino, Masaharu; Scally, Enda; Nshimura, Hiroaki; Azechi, Hiroshi; O'Sullivan, Gerard

2016-03-01

Photo-lithography is a key technology for volume manufacture of high performance and compact semiconductor devices. Smaller and more complex structures can be fabricated by using shorter wavelength light in the photolithography. One of the most critical issues in development of the next generation photo-lithography is to increase energy conversion efficiency (CE) from laser to shorter wavelength light. Experimental database of beyond extreme ultraviolet (BEUV) radiation was obtained by using spherically symmetrical high-Z plasmas generated with spherically allocated laser beams. Absolute energy and spectra of BEUV light emitted from Tb, Gd, and Mo plasmas were measured with a absolutely calibrated BEUV calorimeter and a transmission grating spectrometer. 1.0 x 1012 W/cm2 is the optimal laser intensity to produced efficient BEUV light source plasmas with Tb and Gd targets. Maximum CE is achieved at 0.8% that is two times higher than the published CEs obtained with planar targets.

Improved Turn-On and Operating Voltages in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

2017-10-01

While good ohmic contact formation has been achieved on both p-GaN and n-AlGaN surfaces, the turn-on and operating voltages of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) remain very high. We find that this critical problem is mainly caused by the large difference between the annealing temperatures required for ohmic contact formation on the p-GaN and high Al-fraction n-AlGaN surfaces. We studied the effects of the high-temperature annealing treatments required for n-ohmic contact formation on the subsequent p-ohmic contact formation process in DUV-LEDs. The results show that post-annealing treatment at high temperature is necessary to form an ohmic contact on n-Al0.7Ga0.3N, but a treatment temperature of 900°C or more could cause severe degradation of the specific contact resistivity and the bulk resistivity of p-GaN. We conclude that 900°C is the optimum temperature to form an ohmic contact on n-Al0.7Ga0.3N in DUV-LEDs, where p-GaN and n-Al0.7Ga0.3N act as the p- and n-ohmic contact layers, respectively. We also found that the specific contact resistivity of p-GaN can be reduced by an additional low-temperature annealing treatment after the high-temperature annealing step; this effect can be attributed to the enhancement of the hole concentration in the p-GaN surface contact region. Finally, DUV-LEDs that emit at 280 nm were fabricated using four different annealing treatments during processing. A considerable reduction in the series resistance and thereby in the operating voltage was confirmed using the annealing process proposed above, consisting of a high-temperature anneal at 900°C followed by a low-temperature anneal at 500°C for 3 min.

Light-emitting device with organic electroluminescent material and photoluminescent materials

DOEpatents

McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

2005-06-07

A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

Transmitting and reflecting diffuser. [for ultraviolet light

NASA Technical Reports Server (NTRS)

Keafer, L. S., Jr.; Burcher, E. E.; Kopia, L. P. (Inventor)

1973-01-01

A near-Lambertian diffuser is described which transmits and reflects ultraviolet light. An ultraviolet grade fused silica substrate is coated with vaporized fuse silica. The coating thickness is controlled, one thickness causing ultraviolet light to diffuse and another thickness causing ultraviolet light to reflect a near Lambertian pattern.

A Real Shooting Star

NASA Technical Reports Server (NTRS)

2007-01-01

[figure removed for brevity, see original site] Click on the image for movie of A Real Shooting Star

This artist's animation illustrates a star flying through our galaxy at supersonic speeds, leaving a 13-light-year-long trail of glowing material in its wake. The star, named Mira (pronounced my-rah) after the latin word for 'wonderful,' sheds material that will be recycled into new stars, planets and possibly even life. NASA's Galaxy Evolution Explorer discovered the long trail of material behind Mira during its survey of the entire sky in ultraviolet light.

The animation begins by showing a close-up of Mira -- a red-giant star near the end of its life. Red giants are red in color and extremely bloated; for example, if a red giant were to replace our sun, it would engulf everything out to the orbit of Mars. They constantly blow off gas and dust in the form of stellar winds, supplying the galaxy with molecules, such as oxygen and carbon, that will make their way into new solar systems. Our sun will mature into a red giant in about 5 billion years.

As the animation pulls out, we can see the enormous trail of material deposited behind Mira as it hurls along between the stars. Like a boat traveling through water, a bow shock, or build up of gas, forms ahead of the star in the direction of its motion. Gas in the bow shock is heated and then mixes with the cool hydrogen gas in the wind that is blowing off Mira. This heated hydrogen gas then flows around behind the star, forming a turbulent wake.

Why does the trailing hydrogen gas glow in ultraviolet light? When it is heated, it transitions into a higher-energy state, which then loses energy by emitting ultraviolet light - a process known as fluorescence.

Finally, the artist's rendering gives way to the actual ultraviolet image taken by the Galaxy Evolution Explorer

Mira is located 350 light-years from Earth in the constellation Cetus, otherwise known as the whale. Coincidentally, Mira and its 'whale of a tail' can be found in the tail of the whale constellation.

The use of laser in hysteroscopic surgery.

PubMed

Nappi, Luigi; Sorrentino, Felice; Angioni, Stefano; Pontis, Alessandro; Greco, Pantaleo

2016-12-01

The term laser, an acronym for light amplification by stimulated emission of radiation, covers a wide range of devices. Lasers are commonly described by the emitted wavelength that covers the entire light spectrum from infrared to ultraviolet and the active lasing medium. Currently, over forty different types of lasers have found application in medicine. Moreover, advances made by gynecologists in the field of operative hysteroscopy have developed a very great interest in the use of surgical lasers. Technical improvements in hysteroscopes and lasers have led several gynecologists to evaluate their use in the surgical treatment of intrauterine pathologies. This narrative review concerns the most common used lasers in hysteroscopic surgery with particular attention to the latest promising results of the laser technology.

Progress 42 re-entry

NASA Image and Video Library

2011-10-29

ISS029-E-034092 (29 Oct. 2011) --- This unusual photograph, captured by one of the Expedition 29 crew members aboard the International Space Station, highlights the reentry plasma trail (center) of Progress 42P (M-10M) supply vehicle. Progress 42P docked at the space station on April 29, 2011, and was undocked and de-orbited approximately 183 days later on Oct. 29, 2011. The ISS was located over the southern Pacific Ocean when this image was taken. Light from the rising sun illuminates the curvature of the Earth limb (horizon line) at top, but does not completely overwhelm the airglow visible at image top left. Airglow is caused by light emitted at specific wavelengths by atoms and molecules excited by ultraviolet radiation in the upper atmosphere.

Steady-state photoluminescent excitation characterization of semiconductor carrier recombination.

PubMed

Bhosale, J S; Moore, J E; Wang, X; Bermel, P; Lundstrom, M S

2016-01-01

Photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efficient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Under the right conditions, this technique can also provide a contactless way to measure the external quantum efficiency of a solar cell.

Steady-state photoluminescent excitation characterization of semiconductor carrier recombination

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhosale, J. S.; Department of Electrical and Computer Engineering, Purdue University, West Lafayette, Indiana 47907; Moore, J. E.

2016-01-15

Photoluminescence excitation spectroscopy is a contactless characterization technique that can provide valuable information about the surface and bulk recombination parameters of a semiconductor device, distinct from other sorts of photoluminescent measurements. For this technique, a temperature-tuned light emitting diode (LED) has several advantages over other light sources. The large radiation density offered by LEDs from near-infrared to ultraviolet region at a low cost enables efficient and fast photoluminescence measurements. A simple and inexpensive LED-based setup facilitates measurement of surface recombination velocity and bulk Shockley-Read-Hall lifetime, which are key parameters to assess device performance. Under the right conditions, this technique canmore » also provide a contactless way to measure the external quantum efficiency of a solar cell.« less

The underlying micro-mechanism of performance enhancement of non-polar n-ZnO/p-AlGaN ultraviolet light emitting diode with i-ZnO inserted layer

NASA Astrophysics Data System (ADS)

Jiang, Fan; Chen, Jingwen; Bi, Han; Li, Luying; Jing, Wenkui; Zhang, Jun; Dai, Jiangnan; Che, Renchao; Chen, Changqing; Gao, Yihua

2018-01-01

Non-polar a-plane n-ZnO/p-AlGaN and n-ZnO/i-ZnO/p-AlGaN heterojunction film light-emitting diodes (LEDs) are fabricated with good crystalline quality. The optical measurements show obvious performance enhancement with i-ZnO layer insertion. Off-axis electron holography reveals a potential drop of ˜1.5 V across the heterojunctions with typical p-n junction characteristics. It is found that the electrostatic potentials are inclined and the corresponding electrostatic fields are opposite to each other in n-ZnO and p-AlGaN regions. The electrostatic fields are mainly attributed to strain induced piezoelectric polarizations. After an insertion of an i-ZnO layer into the p-n heterojunction, comparatively flat electrostatic potential generates in the intrinsic ZnO region and contributes to faster movements of the injected electrons and holes, making the i-ZnO layer more conductive to the radiative recombination with enhanced exciton recombination possibilities and at last the LED performance enhancement.

Preparation and photoluminescence properties of red-emitting phosphor ZnAl2O4:Eu3+ with an intense 5D0 → 7F2 transition

NASA Astrophysics Data System (ADS)

He, Can; Ji, Haipeng; Huang, Zhaohui; Zhang, Xiaoguang; Liu, Haitao; Liu, Silin; Liu, Yangai; Fang, Minghao; Wu, Xiaowen; Min, Xin

2018-02-01

A series of ZnAl2-x O4:xEu3+ phosphors was synthesized by a modified co-precipitation method. The phase structure and photoluminescence properties were examined and extensively discussed. Composition-optimized ZnAl1.97O4:0.03Eu3+ exhibited sharp, intense red characteristic emissions with the Commission Internationale de l’Eclairage coordinates of (0.62, 0.33) peaking at 620 nm under an excitation at 394 nm, corresponding to the 5D0 → 7F2 transition of Eu3+. The quenching concentration of Eu3+ in ZnAl2-x O4:xEu3+ phosphors was approximately 0.03. In addition, the concentration quenching mechanism, fluorescence decay curves, and thermally stable luminescence properties of ZnAl2-x O4:xEu3+ phosphors were investigated. The results indicated that ZnAl2-x O4:xEu3+ phosphors demonstrate potential applications in near-ultraviolet light-emitting diode pumped white light lamps.

Energy transfer in M₅(PO₄)₃  F:Eu²⁺,Ce³⁺ (M = Ca and Ba) phosphors.

PubMed

Shinde, K N; Dhoble, S J

2014-08-01

M5(PO4)3F:Eu(2+) (M = Ca and Ba) co-doped with Ce(3+) phosphors were successfully prepared by the combustion synthesis method. The introduction of co-dopant (Ce(3+)) into the host enhanced the luminescent intensity of the M5(PO4)3F:Eu(2+) (M = Ca and Ba) efficiently. Previously, we have reported the synthesis and photoluminescence properties of same phosphors. The aim of this article is to report energy transfer mechanism between Ce(3+) ➔Eu(2+) ions in M5(PO4)3F:Eu(2+) (M = Ca and Ba) phosphors, where Ce(3+) ions act as sensitizers and Eu(2+) ions act as activators. The M5(PO4)3F:Eu(2+) (M = Ca and Ba) co-doped with Ce(3+) phosphor exhibits great potential for use in white ultraviolet (UV) light-emitting diode applications to serve as a single-phased phosphor that can be pumped with near-UV or UV light-emitting diodes. Copyright © 2013 John Wiley & Sons, Ltd.

Charge Carrier Transport Through the Interface Between Hybrid Electrodes and Organic Materials in Flexible Organic Light Emitting Diodes.

PubMed

Zhou, Huanyu; Cheong, Hahn-Gil; Park, Jin-Woo

2016-05-01

We investigated the electronic properties of composite-type hybrid transparent conductive electrodes (h-TCEs) based on Ag nanowire networks (AgNWs) and indium tin oxide (ITO). These h-TCEs were developed to replace ITO, and their mechanical flexibility is superior to that of ITO. However, the characteristics of charge carriers and the mechanism of charge-carrier transport through the interface between the h-TCE and an organic material are not well understood when the h-TCE is used as the anode in a flexible organic light-emitting diode (f-OLED). AgNWs were spin coated onto polymer substrates, and ITO was sputtered atop the AgNWs. The electronic energy structures of h-TCEs were investigated by ultraviolet photoelectron spectroscopy. f-OLEDs were fabricated on both h-TCEs and ITO for comparison. The chemical bond formation at the interface between the h-TCE and the organic layer in f-OLEDs was investigated by X-ray photoelectron spectroscopy. The performances of f-OLEDs were compared based on the analysis results.

NEW Fe IX LINE IDENTIFICATIONS USING SOLAR AND HELIOSPHERIC OBSERVATORY/SOLAR ULTRAVIOLET MEASUREMENT OF EMITTED RADIATION AND HINODE/EIS JOINT OBSERVATIONS OF THE QUIET SUN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Landi, E.; Young, P. R.

2009-12-20

In this work, we study joint observations of Hinode/EUV Imaging Spectrometer (EIS) and Solar and Heliospheric Observatory/Solar Ultraviolet Measurement of Emitted Radiation of Fe IX lines emitted by the same level of the high energy configuration 3s {sup 2}3p {sup 5}4p. The intensity ratios of these lines are dependent on atomic physics parameters only and not on the physical parameters of the emitting plasma, so that they are excellent tools to verify the relative intensity calibration of high-resolution spectrometers that work in the 170-200 A and 700-850 A wavelength ranges. We carry out extensive atomic physics calculations to improve themore » accuracy of the predicted intensity ratio, and compare the results with simultaneous EIS-SUMER observations of an off-disk quiet Sun region. We were able to identify two ultraviolet lines in the SUMER spectrum that are emitted by the same level that emits one bright line in the EIS wavelength range. Comparison between predicted and measured intensity ratios, wavelengths and energy separation of Fe IX levels confirms the identifications we make. Blending and calibration uncertainties are discussed. The results of this work are important for cross-calibrating EIS and SUMER, as well as future instrumentation.« less

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

DOE PAGES

Li, S.; Alverson, S.; Bohler, D.; ...

2017-08-17

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency.more » Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.« less

Development of a passive doas system to retrieve atmospheric pollution columns in the 200 to 355 nm region.

PubMed

Mejía, Rubén Galicia; Vázquez, Josémanueldelarosa; Isakina, Suren Stolik; García, Edgard Moreno; Iglesias, Gustavo Sosa

2013-01-08

In recent years several techniques have been developed to measure and monitor the pollution of the air. Among these techniques, remote sensing using optical methods stands out due to several advantages for air quality control applications. A Passive Differential Optical Absorption Spectroscopy system that uses the ultraviolet region from 200 to 355 nm of the solar radiation is presented. The developed system is portable; therefore it is practical for real time and in situ measurements. The enhanced wavelength range of the system is intended to detect the ultraviolet light penetration in the Mexican Valley considering the solar zenith angle and the altitude. The system was applied to retrieve atmospheric SO2 columns emitted either by anthropogenic (power plant) or natural sources (volcano), reaching a detection limit of about 1 ppm. The measurement of the penetrating solar radiation on the earth surface at the UVC range is presented and the possibility to measure pollution traces of some contaminants as O3, NO2 and aromatic compounds in real time and in situ in the ultraviolet region is discussed.

Development of a passive doas system to retrieve atmospheric pollution columns in the 200 to 355 nm region

PubMed Central

2013-01-01

In recent years several techniques have been developed to measure and monitor the pollution of the air. Among these techniques, remote sensing using optical methods stands out due to several advantages for air quality control applications. A Passive Differential Optical Absorption Spectroscopy system that uses the ultraviolet region from 200 to 355 nm of the solar radiation is presented. The developed system is portable; therefore it is practical for real time and in situ measurements. The enhanced wavelength range of the system is intended to detect the ultraviolet light penetration in the Mexican Valley considering the solar zenith angle and the altitude. The system was applied to retrieve atmospheric SO2 columns emitted either by anthropogenic (power plant) or natural sources (volcano), reaching a detection limit of about 1 ppm. The measurement of the penetrating solar radiation on the earth surface at the UVC range is presented and the possibility to measure pollution traces of some contaminants as O3, NO2 and aromatic compounds in real time and in situ in the ultraviolet region is discussed. PMID:23369629

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, S.; Alverson, S.; Bohler, D.

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency.more » Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μm. In conclusion, our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.« less

Ultraviolet laser transverse profile shaping for improving x-ray free electron laser performance

NASA Astrophysics Data System (ADS)

Li, S.; Alverson, S.; Bohler, D.; Egger, A.; Fry, A.; Gilevich, S.; Huang, Z.; Miahnahri, A.; Ratner, D.; Robinson, J.; Zhou, F.

2017-08-01

The photocathode rf gun is one of the most critical components in x-ray free electron lasers. The drive laser strikes the photocathode surface, which emits electrons with properties that depend on the shape of the drive laser. Most free electron lasers use photocathodes with work function in the ultraviolet, a wavelength where direct laser manipulation becomes challenging. In this paper, we present a novel application of a digital micromirror device (DMD) for the 253 nm drive laser at the Linear Coherent Light Source. Laser profile shaping is accomplished through an iterative algorithm that takes into account shaping error and efficiency. Next, we use laser shaping to control the X-ray laser output via an online optimizer, which shows improvement in FEL pulse energy. Lastly, as a preparation for electron beam shaping, we use the DMD to measure the photocathode quantum efficiency across cathode surface with an averaged laser rms spot size of 59 μ m . Our experiments demonstrate promising outlook of using DMD to shape ultraviolet lasers for photocathode rf guns with various applications.

Estimation of soft X-ray and EUV transition radiation power emitted from the MIRRORCLE-type tabletop synchrotron.

PubMed

Toyosugi, N; Yamada, H; Minkov, D; Morita, M; Yamaguchi, T; Imai, S

2007-03-01

The tabletop synchrotron light sources MIRRORCLE-6X and MIRRORCLE-20SX, operating at electron energies E(el) = 6 MeV and E(el) = 20 MeV, respectively, can emit powerful transition radiation (TR) in the extreme ultraviolet (EUV) and the soft X-ray regions. To clarify the applicability of these soft X-ray and EUV sources, the total TR power has been determined. A TR experiment was performed using a 385 nm-thick Al foil target in MIRRORCLE-6X. The angular distribution of the emitted power was measured using a detector assembly based on an NE102 scintillator, an optical bundle and a photomultiplier. The maximal measured total TR power for MIRRORCLE-6X is P(max) approximately equal 2.95 mW at full power operation. Introduction of an analytical expression for the lifetime of the electron beam allows calculation of the emitted TR power by a tabletop synchrotron light source. Using the above measurement result, and the theoretically determined ratio between the TR power for MIRRORCLE-6X and MIRRORCLE-20SX, the total TR power for MIRRORCLE-20SX can be obtained. The one-foil TR target thickness is optimized for the 20 MeV electron energy. P(max) approximately equal 810 mW for MIRRORCLE-20SX is obtained with a single foil of 240 nm-thick Be target. The emitted bremsstrahlung is negligible with respect to the emitted TR for optimized TR targets. From a theoretically known TR spectrum it is concluded that MIRRORCLE-20SX can emit 150 mW of photons with E > 500 eV, which makes it applicable as a source for performing X-ray lithography. The average wavelength, \\overline\\lambda = 13.6 nm, of the TR emission of MIRRORCLE-20SX, with a 200 nm Al target, could provide of the order of 1 W EUV.

Spectroscopic chemical analysis methods and apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor)

2009-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. Chemical analysis instruments employed in some embodiments include capillary and gel plane electrophoresis, capillary electrochromatography, high performance liquid chromatography, flow cytometry, flow cells for liquids and aerosols, and surface detection instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted simultaneously with native fluorescence spectroscopy to provide high levels of sensitivity and specificity in the same instrument.

Integration of a Fire Detector into a Spacecraft

NASA Technical Reports Server (NTRS)

Linford, R. M. F.

1972-01-01

A detector sensitive to only the ultraviolet radiation emitted by flames has been selected as the basic element of the NASA Skylab fire detection system. It is sensitive to approximately 10(exp -12)W of radiation and will detect small flames at distances in excess of 3m. The performance of the detector was verified by experiments in an aircraft flying zero-gravity parabolas to simulate the characteristics of a fire which the detector must sense. Extensive investigation and exacting design was necessary to exclude all possible sources of false alarms. Optical measurements were made on all the spacecraft windows to determine the amount of solar radiation transmitted. The lighting systems and the onboard experiments also were appraised for ultraviolet emissions. Proton-accelerator tests were performed to determine the interaction of the Earth's trapped radiation belts with the detectors and the design of the instrument was modified to negate these effects.

Visualization of deep ultraviolet photons based on Förster resonance energy transfer and cascade photon reabsorption in diphenylalanine-carbon nitrides composite film

NASA Astrophysics Data System (ADS)

Gan, Zhixing; Zhou, Weiping; Chen, Zhihui; Wang, Huan; Di, Yunsong; Huang, Shisong

2016-11-01

A diphenylalanine (L-Phe-L-Phe, FF)-carbon nitride composite film is designed and fabricated to visualize the deep ultraviolet (DUV, 245-290 nm) photons. The FF film, composed of diphenylalanine molecules, doped with carbon nitrides shows blue emission under excitation of DUV light, which makes the DUV beam observable. Both Förster resonance energy transfer and cascade photon reabsorption contribute to the conversion of photon energy. First, the FF is excited by the DUV photons. On one hand, the energy transfers to the embedded carbon nitrides through nonradiative dipole-dipole couplings. On the other hand, the 284 nm photons emitted from the FF would further excite the carbon nitrides, which will finally convert to blue fluorescence. Herein, the experimental demonstration of a simple device for the visualization of high DUV fluxes is reported.

Pure ultraviolet emission from ZnO quantum dots-based/GaN heterojunction diodes by MgO interlayer

NASA Astrophysics Data System (ADS)

Chen, Cheng; Liang, Renli; Chen, Jingwen; Zhang, Jun; Wang, Shuai; Zhao, Chong; Zhang, Wei; Dai, Jiangnan; Chen, Changqing

2017-07-01

We demonstrate the fabrication and characterization of ZnO/GaN-based heterojunction light-emitting diodes (LEDs) by using air-stable and solution-processable ZnO quantum dots (QDs) with a thin MgO interlayer acting as an electron blocking layer (EBL). The ZnO QDs/MgO/ p-GaN heterojunction can only display electroluminescence (EL) characteristic in reverse bias regime. Under sufficient reverse bias, a fairly pure ultraviolet EL emission located at 370 nm deriving from near band edge of ZnO with a full width at half maximum (FWHM) of 8.3 nm had been obtained, while the deep-level emission had been almost totally suppressed. The EL origination and corresponding carrier transport mechanisms were investigated qualitatively in terms of photoluminescence (PL) results and energy band diagram.[Figure not available: see fulltext.

Spectroscopic chemical analysis methods and apparatus

NASA Technical Reports Server (NTRS)

Reid, Ray D. (Inventor); Hug, William F. (Inventor)

2010-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. Chemical analysis instruments employed in some embodiments include capillary and gel plane electrophoresis, capillary electrochromatography, high performance liquid chromatography, flow cytometry, flow cells for liquids and aerosols, and surface detection instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted simultaneously with native fluorescence spectroscopy to provide high levels of sensitivity and specificity in the same instrument.

A Bubble Bursts

NASA Technical Reports Server (NTRS)

2005-01-01

RCW 79 is seen in the southern Milky Way, 17,200 light-years from Earth in the constellation Centaurus. The bubble is 70-light years in diameter, and probably took about one million years to form from the radiation and winds of hot young stars.

The balloon of gas and dust is an example of stimulated star formation. Such stars are born when the hot bubble expands into the interstellar gas and dust around it. RCW 79 has spawned at least two groups of new stars along the edge of the large bubble. Some are visible inside the small bubble in the lower left corner. Another group of baby stars appears near the opening at the top.

NASA's Spitzer Space Telescope easily detects infrared light from the dust particles in RCW 79. The young stars within RCW 79 radiate ultraviolet light that excites molecules of dust within the bubble. This causes the dust grains to emit infrared light that is detected by Spitzer and seen here as the extended red features.

Enhancing the Photovoltaic Performance of Perovskite Solar Cells with a Down-Conversion Eu-Complex.

PubMed

Jiang, Ling; Chen, Wangchao; Zheng, Jiawei; Zhu, Liangzheng; Mo, Li'e; Li, Zhaoqian; Hu, Linhua; Hayat, Tasawar; Alsaedi, Ahmed; Zhang, Changneng; Dai, Songyuan

2017-08-16

Organometal halide perovskite solar cells (PSCs) have shown high photovoltaic performance but poor utilization of ultraviolet (UV) irradiation. Lanthanide complexes have a wide absorption range in the UV region and they can down-convert the absorbed UV light into visible light, which provides a possibility for PSCs to utilize UV light for higher photocurrent, efficiency, and stability. In this study, we use a transparent luminescent down-converting layer (LDL) of Eu-4,7-diphenyl-1,10-phenanthroline (Eu-complex) to improve the light utilization efficiency of PSCs. Compared with the uncoated PSC, the PSC coated with Eu-complex LDL on the reverse of the fluorine-doped tin oxide glass displayed an enhancement of 11.8% in short-circuit current density (J sc ) and 15.3% in efficiency due to the Eu-complex LDL re-emitting UV light (300-380 nm) in the visible range. It is indicated that the Eu-complex LDL plays the role of enhancing the power conversion efficiency as well as reducing UV degradation for PSCs.

Orbiting observatory SOHO finds source of high-speed "wind" blowing from the Sun

NASA Astrophysics Data System (ADS)

1999-02-01

"The search for the source of the solar wind has been like the hunt for the source of the Nile," said Dr. Don Hassler of the Southwest Research Institute, Boulder, Colorado, lead author of the paper in Science. "For 30 years, scientists have observed high-speed solar wind coming from regions in the solar atmosphere with open magnetic field lines, called coronal holes. However, only recently, with the observations from SOHO, have we been able to measure the detailed structure of this source region". The solar wind comes in two varieties : high-speed and low-speed. The low-speed solar wind moves at "only" 1.5 million kilometres per hour, while the high-speed wind is even faster, moving at speeds as high as 3 million kilometres per hour. As it flows past Earth, the solar wind changes the shape and structure of the Earth's magnetic field. In the past, the solar wind didn't affect us directly, but as we become increasingly dependent on advanced technology, we become more susceptible to its effects. Researchers are learning that variations in the solar wind flow can cause dramatic changes in the shape of the Earth's magnetic field, which can damage satellites and disrupt communications and electrical power systems. The nature and origin of the solar wind is one of the main mysteries ESA's solar observatory SOHO was designed to solve. It has long been thought that the solar wind flows from coronal holes; what is new is the discovery that these outflows are concentrated in specific patches at the edges of the honeycomb-shaped magnetic fields. Just below the surface of the Sun there are large convection cells, and each cell has a magnetic field associated with it. "If one thinks of these cells as paving stones in a patio, then the solar wind is breaking through like grass around the edges, concentrated in the corners where the paving stones meet", said Dr. Helen Mason, University of Cambridge, England, and co-author of the paper to appear in Science. "However, at speeds ranging from 30,000 km/h at the surface to over 3 million km/h, the solar wind "grows" much faster than grass". "Looking at the spot where the solar wind actually appears is extremely important", says co-author Dr. Philippe Lemaire of the Institut d'Astrophysique Spatiale in Orsay, France. The Solar Ultraviolet Measurements of Emitted Radiation (SUMER) spectrometer on SOHO detected the solar wind by observing the ultraviolet spectrum over a large area of the solar north polar region. The SUMER instrument was built under the leadership of Dr. Klaus Wilhelm at the Max-Planck-Institut für Aeronomie in Lindau, Germany, with key contributions from the Institut d'Astrophysique Spatiale in Orsay, France, the NASA Goddard Space Flight Center in Greenbelt, Maryland, and the University of California at Berkeley, with financial support from German, French, US and Swiss national agencies. "Identification of the detailed structure of the source region of the fast solar wind is an important step in solving the solar wind acceleration problem. We can now focus our attention on the plasma conditions and the dynamic processes seen in the corners of the magnetic field structures", says Dr. Wilhelm, also co-author of the Science paper. A spectrum results from the separation of light into its component colours, which correspond to different wavelengths. Blue light has a shorter wavelength and is more energetic than red. A spectrum is similar to what is seen when a prism separates white light into a rainbow of distinct colours. By analysing light this way, astronomers learn a great deal about the object emitting the light, such as its temperature, chemical composition, and motion. The ultraviolet light observed by SUMER is actually invisible to the human eye and cannot penetrate the Earth's atmosphere. The hot gas in the solar wind source region emits light at certain ultraviolet wavelengths. When the hot gas flows towards Earth, as it does in the solar wind, the wavelengths of the ultraviolet light emitted become shorter, a phenomenon called Doppler shift. This is similar to the way an ambulance siren appears to change tone as it speeds by. When the ambulance moves towards us, its sound is compressed to a shorter wavelength, resulting in a higher tone. As it moves away, its sound is stretched to a longer wavelength, resulting in a lower tone. Motion towards us, away from the solar surface, was detected as blueshifts and identified as the beginning of the solar wind. SOHO operates at a special vantage point 1.5 million kilometres out in space, on the sunward side of the Earth. The project is an international collaboration between ESA and NASA. SOHO was launched on an Atlas rocket from Cape Canaveral Air Station, Florida, in December 1995 and is operated from the Goddard Space Flight Center in Greenbelt, Maryland.

Near ultraviolet InGaN/AlGaN-based light-emitting diodes with highly reflective tin-doped indium oxide/Al-based reflectors.

PubMed

Choi, Chang-Hoon; Han, Jaecheon; Park, Jae-Seong; Seong, Tae-Yeon

2013-11-04

The enhanced light output power of a InGaN/AlGaN-based light-emitting diodes (LEDs) using three different types of highly reflective Sn-doped indium oxide (ITO)/Al-based p-type reflectors, namely, ITO/Al, Cu-doped indium oxide (CIO)/s-ITO(sputtered)/Al, and Ag nano-dots(n-Ag)/CIO/s-ITO/Al, is presented. The ITO/Al-based reflectors exhibit lower reflectance (76 - 84% at 365 nm) than Al only reflector (91.1%). However, unlike Al only n-type contact, the ITO/Al-based contacts to p-GaN show good ohmic characteristics. Near-UV (365 nm) InGaN/AlGaN-based LEDs with ITO/Al, CIO/s-ITO/Al, and n-Ag/CIO/s-ITO/Al reflectors exhibit forward-bias voltages of 3.55, 3.48, and 3.34 V at 20 mA, respectively. The LEDs with the ITO/Al and CIO/s-ITO/Al reflectors exhibit 9.5% and 13.5% higher light output power (at 20 mA), respectively, than the LEDs with the n-Ag/CIO/s-ITO/Al reflector. The improved performance of near UV LEDs is attributed to the high reflectance and low contact resistivity of the ITO/Al-based reflectors, which are better than those of conventional Al-based reflectors.

Synthesis on structure and properties of zinc nanocrystal in high ordered 3D nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sathyaseelan, B., E-mail: bsseelan03@gmail.com; Manigandan, A.; Anbarasu, V.

2015-06-24

The wet impregnation method was employed to prepare ZnO encapsulated in mesoporous silica (ZnO/KIT-6). The prepared ZnO/KIT-6 samples have been studied by X-ray diffraction, transmission electron microscope, and nitrogen adsorption–desorption isotherm. The low angle powder XRD patterns of Calcined ZnO/KIT-6 materials showed a phase that can be indexed to cubic Ia3d. Tem images revealed well ordered cubic 3D nanoporous chennels. The ZnO encapsulated in KIT-6 can be used as light-emitting diodes and ultraviolet nanolasers.

Can the circadian system of a diurnal and a nocturnal rodent entrain to ultraviolet light?

PubMed

Hut, R A; Scheper, A; Daan, S

2000-01-01

Spectral measurements of sunlight throughout the day show close correspondence between the timing of above ground activity of the European ground squirrel and the presence of ultraviolet light in the solar spectrum. However, in a standard entrainment experiment ground squirrels show no entrainment to ultraviolet light, while Syrian hamsters do entrain under the same protocol. Presented transmittance spectra for lenses, corneas, and vitreous bodies may explain the different results of the entrainment experiment. We found ultraviolet light transmittance in the colourless hamster lens (50% cut-off at 341 nm), but not in the yellow ground squirrel lens (50% cut-off around 493 nm). Ultraviolet sensitivity in the ground squirrels based upon possible fluorescence mechanisms was not evident. Possible functions of ultraviolet lens filters in diurnal mammals are discussed, and compared with nocturnal mammals and diurnal birds. Species of the latter two groups lack ultraviolet filtering properties of their lenses and their circadian system is known to respond to ultraviolet light, a feature that does not necessarily has to depend on ultraviolet photoreceptors. Although the circadian system of several species responds to ultraviolet light, we argue that the role of ultraviolet light as a natural Zeitgeber is probably limited.

Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

PubMed

Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

2018-01-31

Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

A clinical review of phototherapy for psoriasis.

PubMed

Zhang, Ping; Wu, Mei X

2018-01-01

Psoriasis is an autoimmune inflammatory skin disease. In the past several decades, phototherapy has been widely used to treat stable psoriatic lesions, including trunk, scalp, arms and legs, and partial nail psoriasis. A variety of light/lasers with different mechanisms of action have been developed for psoriasis including ultraviolet B (UVB), psoralen ultraviolet A (PUVA), pulsed dye laser (PDL), photodynamic therapy (PDT), intense pulsed light (IPL), light-emitting diodes (LED), and so on. Because light/laser each has specific therapeutic and adverse effects, it is important to adequately choose the sources and parameters in management of psoriasis with different pathogenic sites, severities, and duration of the disorder. This review aims at providing most updated clinic information to physicians about how to select light/laser sources and individual therapeutic regimens. To date, UV light is primarily for stable plaque psoriasis and PDL for topical psoriatic lesions with small area, both of which are safe and effective. On the other hand, PUVA has better curative effects than UVB for managing refractory psoriasis plaques, if its side effects can be better controlled. PDL provides optimal outcomes on nail psoriasis compared with other lasers. Although the trails of low-level light/laser therapy (LLLT) are still small, the near infrared (NIR) and visible red light with low energy show promise for treating psoriasis due to its strong penetration and encouraging photobiomodulation. IPL is rarely reported for psoriasis treatment, but PDT-IPL has been found to offer a moderate effect on nail psoriasis. In brief, various phototherapies have been used either in different combinations or as monotherapy. The modality has become a mainstay in the treatment of mild-to-moderate psoriasis without systemic adverse events in today's clinical practice.

Understanding the Early Evolution of M dwarf Extreme Ultraviolet Radiation

NASA Astrophysics Data System (ADS)

Peacock, Sarah; Barman, Travis; Shkolnik, Evgenya

2015-11-01

The chemistry and evolution of planetary atmospheres depends on the evolution of high-energy radiation emitted by its host star. High levels of extreme ultraviolet (EUV) radiation can drastically alter the atmospheres of terrestrial planets through ionizing, heating, expanding, chemically modifying and eroding them during the first few billion years of a planetary lifetime. While there is evidence that stars emit their highest levels of far and near ultraviolet (FUV; NUV) radiation in the earliest stages of their evolution, we are currently unable to directly measure the EUV radiation. Most previous stellar atmosphere models under-predict FUV and EUV emission from M dwarfs; here we present new models for M stars that include prescriptions for the hot, lowest density atmospheric layers (chromosphere, transition region and corona), from which this radiation is emitted. By comparing our model spectra to GALEX near and far ultraviolet fluxes, we are able to predict the evolution of EUV radiation for M dwarfs from 10 Myr to a few Gyr. This research is the next major step in the HAZMAT (HAbitable Zones and M dwarf Activity across Time) project to analyze how the habitable zone evolves with the evolving properties of stellar and planetary atmospheres.

Hg-201 (+) CO-Magnetometer for HG-199(+) Trapped Ion Space Atomic Clocks

NASA Technical Reports Server (NTRS)

Burt, Eric A. (Inventor); Taghavi, Shervin (Inventor); Tjoelker, Robert L. (Inventor)

2011-01-01

Local magnetic field strength in a trapped ion atomic clock is measured in real time, with high accuracy and without degrading clock performance, and the measurement is used to compensate for ambient magnetic field perturbations. First and second isotopes of an element are co-located within the linear ion trap. The first isotope has a resonant microwave transition between two hyperfine energy states, and the second isotope has a resonant Zeeman transition. Optical sources emit ultraviolet light that optically pump both isotopes. A microwave radiation source simultaneously emits microwave fields resonant with the first isotope's clock transition and the second isotope's Zeeman transition, and an optical detector measures the fluorescence from optically pumping both isotopes. The second isotope's Zeeman transition provides the measure of magnetic field strength, and the measurement is used to compensate the first isotope's clock transition or to adjust the applied C-field to reduce the effects of ambient magnetic field perturbations.

Phagocytic and chemiluminescent responses of mouse peritoneal macrophages to living and killed Salmonella typhimurium and other bacteria

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tomita, T.; Blumenstock, E.; Kanegasaki, S.

1981-06-01

In the presence of luminol, resident as well as thioglycolate-induced and immunized macrophages emitted chemiluminescence more efficiently when the cells were exposed to living Salmonella typhimurium than when they were exposed to the same bacterium killed by ultraviolet light or heat. This phenomenon was observed whether or not the bacterium was opsonized. The different response to living and killed bacteria was also found with Escherichia coli, Pseudomonas aeruginosa, Proteus morganii, and Enterobacter aerogenes, but not with Shigella sonnei, Klebsiella pneumoniae, and Propionibacterium acnes. The results suggest that macrophages respond better to living, motile bacteria than to nonmotile or killed bacteria.more » The experimental results obtained with motility mutants of S. typhimurium, E. coli, and P. aeruginosa confirm that macrophages exposed to the motile bacteria emit chemiluminescence more efficiently and ingest the motile bacteria at a much faster rate than the nonmotile bacteria.« less

A portable system for noninvasive assessment of advanced glycation end-products using skin fluorescence and reflectance spectrum

NASA Astrophysics Data System (ADS)

Wang, Y. K.; Zhu, L.; Zhang, L.; Zhang, G.; Liu, Y.; Wang, A.

2012-07-01

An optical system has been developed for noninvasive assessment of skin advanced glycation end-products (AGEs). The system comprises mainly a high-power ultraviolet light emitting diode (LED) as an excitation source, an LED array for the reflectance measurement, a trifurcated fiber-optic probe for light transmitting and receiving, and a compact spectrometer for light detecting. Both skin fluorescence of a subject and the reflectance spectrum of the same site can be obtained in a single measurement with the system. Demonstrative measurements with the system have been conducted. Results indicate that the measured reflectance spectrum can be used to compensate for the distortion of AGEs fluorescence, which is caused by skin absorption and scattering. The system is noninvasive, portable, easy to operate, and has potential applications for clinical diagnosis of AGE-related diseases, especially diabetes mellitus.

Ba2ZnWO6:Sm3+ as promising orange-red emitting phosphors: Photoluminescence properties and energy transfer process

NASA Astrophysics Data System (ADS)

Chen, Peng; Hu, Wenyuan; Yang, Dingming; Zhu, Jiayi; Zhang, Jing; Wu, Yadong

2018-02-01

Novel orange-red emitting phosphors, Ba2Zn1-xWO6:xSm3+ (x = 0.03, 0.04, 0.05, 0.06 and 0.07) (BZW:Sm3+), were prepared using a high-temperature solid-state reaction method. Their crystal structure and photoluminescence properties were characterized and the mechanism of energy transfers between Ba2ZnWO6 and Sm3+ elucidated in detail. It was found that the phosphors had a cubic structure with space group Fm 3 bar m . They can be excited by near-ultraviolet light, and the characteristic emissions of Sm3+ ions are observed at 564 nm, 598 nm and 645 nm, corresponding to 4G5/2 → 6H5/2, 4G5/2 → 6H7/2 and 4G5/2 → 6H9/2 transitions, respectively. The 4G5/2 → 6H9/2 transitions shows the greatest intensity, which indicates that Sm3+ ions occupy the noncentrosymmetric sites. The optimal doping concentration of Sm3+ ions in Ba2ZnWO6 is about 5 mol% and the phenomenon of concentration quenching occurs when the content of Sm3+ ions exceeds 5 mol%. All results show that the Ba2ZnWO6:Sm3+ phosphor holds great promise for use in high-quality white light-emitting diodes.

Characterising and testing deep UV LEDs for use in space applications

NASA Astrophysics Data System (ADS)

Hollington, D.; Baird, J. T.; Sumner, T. J.; Wass, P. J.

2015-12-01

Deep ultraviolet (DUV) light sources are used to neutralise isolated test masses in highly sensitive space-based gravitational experiments. An example is the LISA Pathfinder charge management system, which uses low-pressure mercury lamps. A future gravitational-wave observatory such as eLISA will use UV light-emitting diodes (UV LEDs), which offer numerous advantages over traditional discharge lamps. Such devices have limited space heritage but are now available from a number of commercial suppliers. Here we report on a test campaign that was carried out to quantify the general properties of three types of commercially available UV LEDs and demonstrate their suitability for use in space. Testing included general electrical and UV output power measurements, spectral stability, pulsed performance and temperature dependence, as well as thermal vacuum, radiation and vibration survivability.

Improvement of electroluminescence performance by integration of ZnO nanowires and single-crystalline films on ZnO/GaN heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Zhifeng; Zhang, Yuantao, E-mail: zhangyt@jlu.edu.cn; Cui, Xijun

2014-03-31

Heterojunction light-emitting diodes based on n-ZnO nanowires/ZnO single-crystalline films/p-GaN structure have been demonstrated for an improved electroluminescence performance. A highly efficient ultraviolet emission was observed under forward bias. Compared with conventional n-ZnO/p-GaN structure, high internal quantum efficiency and light extraction efficiency were simultaneously considered in the proposed diode. In addition, the diode can work continuously for ∼10 h with only a slight degradation in harsh environments, indicating its good reliability and application prospect in the future. This route opens possibilities for the development of advanced nanoscale devices in which the advantages of ZnO single-crystalline films and nanostructures can be integrated together.

Remote high-temperature insulatorless heat-flux gauge

DOEpatents

Noel, B.W.

1993-12-28

A remote optical heat-flux gauge for use in extremely high temperature environments is described. This application is possible because of the use of thermographic phosphors as the sensing media, and the omission of the need for an intervening layer of insulator between phosphor layers. The gauge has no electrical leads, but is interrogated with ultraviolet or laser light. The luminescence emitted by the two phosphor layers, which is indicative of the temperature of the layers, is collected and analyzed in order to determine the heat flux incident on the surface being investigated. The two layers of thermographic phosphor must be of different materials to assure that the spectral lines collected will be distinguishable. Spatial heat-flux measurements can be made by scanning the light across the surface of the gauge. 3 figures.

Remote high-temperature insulatorless heat-flux gauge

DOEpatents

Noel, Bruce W.

1993-01-01

A remote optical heat-flux gauge for use in extremely high temperature environments is described. This application is possible because of the use of thermographic phosphors as the sensing media, and the omission of the need for an intervening layer of insulator between phosphor layers. The gauge has no electrical leads, but is interrogated with ultraviolet or laser light. The luminescence emitted by the two phosphor layers, which is indicative of the temperature of the layers, is collected and analyzed in order to determine the heat flux incident on the surface being investigated. The two layers of thermographic phosphor must be of different materials to assure that the spectral lines collected will be distinguishable. Spatial heat-flux measurements can be made by scanning the light across the surface of the gauge.

Combustion synthesis and luminescence properties of yellow-emitting phosphors Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Zhiguo, E-mail: xiazg426@yahoo.com.cn; Liao, Libing, E-mail: lbliao@cugb.edu.cn; Zhang, Zepeng

2012-02-15

Graphical abstract: A yellow-emitting phosphor Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} was firstly synthesized by the solution-combustion method. The photoluminescence excitation and emission spectra, temperature dependence of luminescence intensity, and luminescence lifetime of the phosphor were investigated. Highlights: Black-Right-Pointing-Pointer Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor was synthesized by a solution-combustion method. Black-Right-Pointing-Pointer Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} showed an intense yellow emission band centered at 569 nm with the CIE coordinate of (0.453, 0.526). Black-Right-Pointing-Pointer The temperature dependent luminescence property and mechanism of Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} were studied. -- Abstract: Yellow-emitting phosphor Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} was synthesized by a solution-combustion method. Themore » phase structure and microstructure were determined by the X-ray diffraction (XRD) and scanning electron microscope (SEM) analysis, respectively. The as-prepared Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor absorbed near ultraviolet and blue light of 320-500 nm, and showed an intense yellow emission band centered at 569 nm with the CIE coordinate of (0.453, 0.526). The lifetime of Eu{sup 2+} ions in Ca{sub 2}BO{sub 3}Cl:Eu{sup 2+} phosphor was measured, furthermore the temperature dependent luminescence property and mechanism were studied, which also testified that the present phosphor had a promising potential for white light-emitting diodes.« less

71-Mbit/s ultraviolet-B LED communication link based on 8-QAM-OFDM modulation.

PubMed

Sun, Xiaobin; Zhang, Zhenyu; Chaaban, Anas; Ng, Tien Khee; Shen, Chao; Chen, Rui; Yan, Jianchang; Sun, Haiding; Li, Xiaohang; Wang, Junxi; Li, Jinmin; Alouini, Mohamed-Slim; Ooi, Boon S

2017-09-18

A demonstration of ultraviolet-B (UVB) communication link is implemented utilizing quadrature amplitude modulation (QAM) orthogonal frequency-division multiplexing (OFDM). The demonstration is based on a 294-nm UVB-light-emitting-diode (UVB-LED) with a full-width at half-maximum (FWHM) of 9 nm and light output power of 190 μW, at 7 V, with a special silica gel lens on top of it. A -3-dB bandwidth of 29 MHz was measured and a high-speed near-solar-blind communication link with a data rate of 71 Mbit/s was achieved using 8-QAM-OFDM at perfect alignment. 23.6 Mbit/s using 2-QAM-OFDM when the angle subtended by the pointing directions of the UVB-LED and photodetector (PD) is 12 degrees, thus establishing a diffuse-line-of-sight (LOS) link. The measured bit-error rate (BER) of 2.8 ×10 -4 and 2.4 ×10 -4 , respectively, are well below the forward error correction (FEC) criterion of 3.8 ×10 -3 . The demonstrated high data-rate OFDM-based UVB communication link paves the way for realizing high-speed non-line-of-sight free-space optical communications.

Field Studies of Broadband Aerosol Optical Extinction in the Ultraviolet Spectral Region

NASA Astrophysics Data System (ADS)

Washenfelder, R. A.; Attwood, A.; Brock, C. A.; Brown, S. S.

2013-12-01

Aerosols influence the Earth's radiative budget by scattering and absorbing incoming solar radiation. The optical properties of aerosols vary as a function of wavelength, but few measurements have reported the wavelength dependence of aerosol extinction cross sections and complex refractive indices. In the case of brown carbon, its wavelength-dependent absorption in the ultraviolet spectral region has been suggested as an important component of aerosol radiative forcing. We describe a new field instrument to measure aerosol optical extinction as a function of wavelength, using cavity enhanced spectroscopy with a broadband light source. The instrument consists of two broadband channels which span the 360-390 and 385-420 nm spectral regions using two light emitting diodes (LED) and a grating spectrometer with charge-coupled device (CCD) detector. We deployed this instrument during the Fire Lab at Missoula Experiment during Fall 2012 to measure biomass burning aerosol, and again during the Southern Oxidant and Aerosol Study in summer 2013 to measure organic aerosol in the Southeastern U.S. In both field experiments, we determined aerosol optical extinction as a function of wavelength and can interpret this together with size distribution and composition measurements to characterize the aerosol optical properties and radiative forcing.

Influence of environmental factors on removal of oxides of nitrogen by a photocatalytic coating.

PubMed

Cros, Clement J; Terpeluk, Alexandra L; Crain, Neil E; Juenger, Maria C G; Corsi, Richard L

2015-08-01

Nitrogen oxides (NOx) emitted from combustion processes have elevated concentrations in large urban areas. They cause a range of adverse health effects, acid rain, and are precursors to formation of other atmospheric pollutants, such as ozone, peroxyacetyl nitrate, and inorganic aerosols. Photocatalytic materials containing a semi-conductor that can be activated by sunlight, such as titanium dioxide, have been studied for their ability to remove NOx. The study presented herein aims to elucidate the environmental parameters that most influence the NOx removal efficiency of photocatalytic coatings in hot and humid climate conditions. Concrete samples coated with a commercially available photocatalytic coating (a stucco) and an uncoated sample have been tested in a reactor simulating reasonable summertime outdoor sunlight, relative humidity and temperature conditions in southeast Texas. Two-level full factorial experiments were completed on each sample for five parameters. It was found that contact time, relative humidity and temperature significantly influenced both NO and NO₂removal. Elevated concentrations of organic pollutants reduced NO removal by the coating. Ultra-violet light intensity did not significantly influence removal of NO or NO₂, however, ultra-violet light intensity was involved in a two-factor interaction that significantly influenced removal of both NO and NO₂.

The Development of Ultraviolet Light Emitting Diodes on p-SiC Substrates

NASA Astrophysics Data System (ADS)

Brummer, Gordon

Ultraviolet (UV) light emitting diodes (LEDs) are promising light sources for purification, phototherapy, and resin curing applications. Currently, commercial UV LEDs are composed of AlGaN-based n-i-p junctions grown on sapphire substrates. These devices suffer from defects in the active region, inefficient p-type doping, and poor light extraction efficiency. This dissertation addresses the development of a novel UV LED device structure, grown on p-SiC substrates. In this device structure, the AlGaN-based intrinsic (i) and n-layers are grown directly on the p-type substrate, forming a p-i-n junction. The intrinsic layer (active region) is composed of an AlN buffer layer followed by three AlN/Al0.30Ga0.70N quantum wells. After the intrinsic layer, the n-layer is formed from n-type AlGaN. This device architecture addresses the deficiencies of UV LEDs on sapphire substrates while providing a vertical device geometry, reduced fabrication complexity, and improved thermal management. The device layers were grown by molecular beam epitaxy (MBE). The material properties were optimized by considering varying growth conditions and by considering the role of the layer within the device. AlN grown at 825 C and with a Ga surfactant yielded material with screw dislocation density of 1x10 7 cm-2 based on X-ray diffraction (XRD) analysis. AlGaN alloys grown in this work contained compositional inhomogeneity, as verified by high-resolution XRD, photoluminescence, and absorption measurements. Based on Stokes shift measurements, the degree of compositional inhomogeneity was correlated with the amount of excess Ga employed during growth. Compositional inhomogeneity yields carrier localizing potential fluctuations, which are advantages in light emitting device layers. Therefore, excess Ga growth conditions were used to grow AlN/Al0.30Ga0.70N quantum wells (designed using a wurtzite k.p model) with 35% internal quantum efficiency. Potential fluctuations limit the mobility of carriers and introduce sub-bandgap absorption, making them undesirable in the n-AlGaN layers. n-Al0.60Ga 0.40N grown under stoichiometric Ga flux and an In surfactant reduced the Stokes shift (compared to n-AlGaN grown without In) by 150 meV. However, even under these growth modes, some compositional inhomogeneity persisted which is speculatively attributed to the vicinal substrate. Device epitaxial layer stacks utilizing the optimum growth conditions were fabricated into prototype vertical UV LEDs which emit from 295-320 nm. In order to increase light extraction efficiency, UV distributed Bragg reflectors (DBRs) based on compositionally graded AlGaN alloys were designed using the transfer matrix method (TMM) and grown by MBE. DBRs were formed from repeated compositionally graded AlGaN alloys. This structure utilized the polarization doping and index of refraction variation of graded composition AlGaN. DBRs with square wave, sinusoidal, triangular, and sawtooth compositional profiles were realized, with reflectivity peaks over 50%, centered at 280 nm.

High efficiency light source using solid-state emitter and down-conversion material

DOEpatents

Narendran, Nadarajah; Gu, Yimin; Freyssinier, Jean Paul

2010-10-26

A light emitting apparatus includes a source of light for emitting light; a down conversion material receiving the emitted light, and converting the emitted light into transmitted light and backward transmitted light; and an optic device configured to receive the backward transmitted light and transfer the backward transmitted light outside of the optic device. The source of light is a semiconductor light emitting diode, a laser diode (LD), or a resonant cavity light emitting diode (RCLED). The down conversion material includes one of phosphor or other material for absorbing light in one spectral region and emitting light in another spectral region. The optic device, or lens, includes light transmissive material.

Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

NASA Astrophysics Data System (ADS)

Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

2017-02-01

III-nitride based ultraviolet (UV) light emitting diodes (LEDs) are of considerable interest in replacing gas lasers and mercury lamps for numerous applications. Specifically, AlGaN quantum well (QW) based LEDs have been developed extensively but the external quantum efficiencies of which remain less than 10% for wavelengths <300 nm due to high dislocation density, difficult p-type doping and most importantly, the physics and band structure from the three degeneration valence subbands. One solution to address this issue at deep UV wavelengths is by the use of the AlGaN-delta-GaN QW where the insertion of the delta-GaN layer can ensure the dominant conduction band (C) - heavyhole (HH) transition, leading to large transverse-electric (TE) optical output. Here, we proposed and investigated the physics and polarization-dependent optical characterizations of AlN-delta- GaN QW UV LED at 300 nm. The LED structure is grown by Molecular Beam Epitaxy (MBE) where the delta-GaN layer is 3-4 monolayer (QW-like) sandwiched by 2.5-nm AlN sub-QW layers. The physics analysis shows that the use of AlN-delta-GaN QW ensures a larger separation between the top HH subband and lower-energy bands, and strongly localizes the electron and HH wave functions toward the QW center and hence resulting in 30-time enhancement in TEpolarized spontaneous emission rate, compared to that of a conventional Al0.35Ga0.65N QW. The polarization-dependent electroluminescence measurements confirm our theoretical analysis; a dominant TE-polarized emission was obtained at 298 nm with a minimum transverse-magnetic (TM) polarized emission, indicating the feasibility of high-efficiency TEpolarized UV emitters based on our proposed QW structure.

Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, Jun Hyuk; Lee, Jong Won; Kim, Dong Yeong

The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaInP red light-emitting diodes (LEDs), a 450 nm GaInN blue LED, and a 285 nm AlGaN deep-ultraviolet (DUV) LED. We observed distinct differences in the variation of the EQE with temperature and current density for the three types of LEDs. Whereas the EQE of the AlGaInP red LED increases as temperature decreases below room temperature, the EQEs of GaInN blue and AlGaN DUV LEDs decrease for the same change in temperature in a low-current density regime. The free carrier concentration, as determined from the dopant ionization energy, shows a strong material-system-specificmore » dependence, leading to different degrees of asymmetry in carrier concentration for the three types of LEDs. We attribute the EQE variation of the red, blue, and DUV LEDs to the different degrees of asymmetry in carrier concentration, which can be exacerbated at cryogenic temperatures. As for the EQE variation with temperature in a high-current density regime, the efficiency droop for the AlGaInP red and GaInN blue LEDs becomes more apparent as temperature decreases, due to the deterioration of the asymmetry in carrier concentration. However, the EQE of the AlGaN DUV LED initially decreases, then reaches an EQE minimum point, and then increases again due to the field-ionization of acceptors by the Poole-Frenkel effect. The results elucidate that carrier transport phenomena allow for the understanding of the droop phenomenon across different material systems, temperatures, and current densities.« less

History of Hubble Space Telescope (HST)

NASA Image and Video Library

1995-01-01

These eerie, dark, pillar-like structures are actually columns of cool interstellar hydrogen gas and dust that are also incubators for new stars. The pillars protrude from the interior wall of a dark molecular cloud like stalagmites from the floor of a cavern. They are part of the Eagle Nebula (also called M16), a nearby star-forming region 7,000 light-years away, in the constellation Serpens. The ultraviolet light from hot, massive, newborn stars is responsible for illuminating the convoluted surfaces of the columns and the ghostly streamers of gas boiling away from their surfaces, producing the dramatic visual effects that highlight the three-dimensional nature of the clouds. This image was taken on April 1, 1995 with the Hubble Space Telescope Wide Field Planetary Camera 2. The color image is constructed from three separate images taken in the light of emission from different types of atoms. Red shows emissions from singly-ionized sulfur atoms, green shows emissions from hydrogen, and blue shows light emitted by doubly-ionized oxygen atoms.

Microorganisms in the Stratosphere (MIST): In-flight Sterilization with UVC Leds

NASA Technical Reports Server (NTRS)

Wong, Gregory Michael; Smith, David J.

2014-01-01

The stratosphere (10 km to 50 km above sea level) is a unique place on Earth for astrobiological studies of microbes in extreme environments due to the combination of harsh conditions (high ultraviolet radiation, low pressure, desiccation, and low temperatures). Microorganisms in the Stratosphere (MIST) will attempt to characterize the diversity of microbes at these altitudes using a balloon collection device on a meteorological weather balloon. A major challenge of such an aerobiology study is the potential for ground contamination that makes it difficult to distinguish between collected microbes and contaminants. One solution is to use germicidal ultraviolet light emitting diodes (UV LEDs) to sterilize the collection strip. To use this solution, an optimal spatial arrangement of the lights had to be determined to ensure the greatest chance of complete sterilization within the 30 to 60 minute time of balloon ascent. A novel, 3D-printed test stand was developed to experimentally determine viable Bacillus pumilus SAFR-032 spore reduction after exposure to ultraviolet radiation at various times, angles, and distances. Taken together, the experimental simulations suggested that the UV LEDs on the MIST flight hardware should be active for at least 15 minutes and mounted within 4 cm of the illuminated surface at any angle to achieve optimal sterilization. These findings will aid in the production of the balloon collection device to ensure pristine stratospheric microbial samples are collected. Flight hardware capable of in-flight self-sterilization will enable future life detection missions to minimize both forward contamination and false positives.

Preparation of electrospun pyrochlore-structure KGdTa2O7:Eu3+ phosphor: the optical and structural properties for white light emitting diode applications.

PubMed

Yim, Chul Jin; Unithrattil, Sanjith; Chung, Woon Jin; Im, Won Bin

2013-12-01

Red emitting nanofibers, KGdTa2O7:Eu3+ were synthesized by electrospinning technique followed by heat treatment. As-prepared uniform fiber precursor with diameter ranging from about 700 nm to about 900 nm were calcined after removing organic species by calcination. The fiber surface become rough and diameter decreased to about 250-340 nm range due to decomposition of organic species and formation of inorganic phase. Morphology, structural and photoluminescent properties of fibers were analyzed using thermogravimetric and differential thermal analysis (TG-DTA), X-ray diffraction (XRD), scanning electron microscopy (SEM), transmission electron microscopy (TEM), high-resolution transmission electron microscopy (HRTEM), and photoluminescence (PL). TG-DTA analysis indicates that KGdTa2O7:Eu3+ began to crystalize at 520 degrees C. Fibers annealed at 900 degrees C formed well crystallized uniform fibers. Under ultraviolet excitation KGdTa2O7:Eu3+ exhibits red emission due to transitions in 4f states of Eu3+. The excitation band is dominated by the Eu(3+)--O2-charge transfer band peaked at 289 nm. The emission peak is in the region that is ideal for red light emission.

Color tunable emission in Ce3+ and Tb3+ co-doped Ba2Ln(BO3)2Cl (Ln=Gd and Y) phosphors for white light-emitting diodes.

PubMed

Zhang, Niumiao; Guo, Chongfeng; Jing, Heng; Jeong, Jung Hyun

2013-12-01

Ce(3+) and Tb(3+) co-doped Ba2Ln(BO3)2Cl (Ln=Y and Gd) green emitting phosphors were prepared by solid state reaction in reductive atmosphere. The emission and excitation spectra as well as luminescence decays were investigated, showing the occurrence of efficient energy transfer from Ce(3+) to Tb(3+) in this system. The phosphors exhibit both a blue emission from Ce(3+) and a green emission from Tb(3+) under near ultraviolet light excitation with 325-375 nm wavelength. Emission colors of phosphors could be tuned from deep blue through cyan to green by adjusting the Tb(3+) concentrations. The energy transfer efficiency and emission intensity of Ba2Y(BO3)2Cl:Ce(3+), Tb(3+) precede those of Ba2Gd(BO3)2Cl:Ce(3+), Tb(3+), and the sample Ba2Y(BO3)2Cl:0.03Ce(3+), 0.10Tb(3+) is the best candidate for n-UV LEDs. Copyright © 2013 Elsevier B.V. All rights reserved.

Photoprotection and photoreception of intraocular lenses under xenon and white LED illumination.

PubMed

Artigas, J M; Navea, A; García-Domene, M C; Artigas, C; Lanzagorta, A

2016-05-01

To analyze the photoprotection and phototransmission that various intraocular lenses (IOLs) provide under the illumination of a xenon (Xe) lamp and white LEDs (light emitting diode). The spectral transmission curves of six representative IOLs were measured using a Perkin-Elmer Lambda 35 UV/VIS spectrometer. Various filtering simulations were performed using a Xe lamp and white LEDs. The spectral emissions of these lamps were measured with an ILT-950 spectroradiometer. The IOLs analyzed primarily show transmission of nearly 100% in the visible spectrum. In the ultraviolet (UV) region, the filters incorporated in the various IOLs did not filter equally, and some of them let an appreciable amount of UV through. The Xe lamp presented a strong emission of ultraviolet A (UVA), and its emission under 300nm was not negligible. The white LED did not present an appreciable emission under 380nm. The cut-off wavelength of most filters is between 380 and 400nm (Physiol Hydriol60C(®), IOLTECH E4T(®), Alcon SA60AT(®), Alcon IQ SN60WF(®)), so that their UV protection is very effective. Nonetheless, the IOL OPHTEC Oculaid(®) contains a filter that, when a Xe lamp is used, lets through up to 20% for 350nm and up to 15% for 300nm, which at this point is ultraviolet B (UVB). The OPHTEC(®) Artisan IOL has a transmission peak below 300nm, which must be taken into account under Xe illumination. White LEDs do not emit energy below 380nm, so no special protection is required in the UV region. Copyright © 2016 Elsevier Masson SAS. All rights reserved.

Far-ultraviolet spectral changes of titanium dioxide with gold nanoparticles by ultraviolet and visible light

NASA Astrophysics Data System (ADS)

Tanabe, Ichiro; Kurawaki, Yuji

2018-05-01

Attenuated total reflectance spectra including the far-ultraviolet (FUV, ≤ 200 nm) region of titanium dioxide (TiO2) with and without gold (Au) nanoparticles were measured. A newly developed external light-irradiation system enabled to observe spectral changes of TiO2 with Au nanoparticles upon light irradiations. Absorption in the FUV region decreased and increased by the irradiation with ultraviolet and visible light, respectively. These spectral changes may reflect photo-induced electron transfer from TiO2 to Au nanoparticles under ultraviolet light and from Au nanoparticles to TiO2 under visible light, respectively.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Yoejin; Park, Sangmoon, E-mail: spark@silla.ac.kr

Graphical abstract: - Highlights: • New near-ultraviolet (NUV)-excitable materials composed of Ba{sub 9}Eu{sub m}Mn{sub n}Y{sub 2}Si{sub 6}O{sub 24} (m = 0.01–0.5, n = 0–0.7) were prepared. • High energy-transfer from Eu{sup 2+} to Mn{sup 2+} and their energy-transfer mechanism were discussed. • The co-doping of Eu{sup 2+} and Mn{sup 2+} in the orthosilicate structure resulted in the emission of white light under NUV LED light. - Abstract: New single-phase and near-ultraviolet (NUV)-excitable materials composed of Ba{sub 9}Eu{sub m}Mn{sub n}Y{sub 2}Si{sub 6}O{sub 24} (m = 0.01–0.5, n = 0–0.7) were prepared via a solid-state reaction in reducing atmosphere. X-ray diffraction patternsmore » of the obtained phosphors were examined to index the peak positions. After doping the host structure with Eu{sup 2+} and Mn{sup 2+} emitters, the intense green, white, and orange emission lights that were observed in the photoluminescence spectra under NUV excitation were monitored. The dependence of the luminescent intensity of the Mn{sup 2+} co-doped (n = 0.1–0.7) host lattices on the fixed Eu{sup 2+} content (m = 0.1, 0.3, 0.5) is also investigated. Co-doping Mn{sup 2+} into the Eu{sup 2+}-doped host structure enabled a high energy-transfer from Eu{sup 2+} to Mn{sup 2+} and their energy-transfer mechanism were discussed. Using these phosphors, the desired CIE values including emissions throughout the green to orange regions of the spectra were achieved. Efficient white-light light-emitting diodes (LEDs) were fabricated using Eu{sup 2+} and Mn{sup 2+} co-doped phosphors based on NUV-excitable LED lights.« less

Investigation and Characterization of Defects in Epitaxial Films for Ultraviolet Light Emitting Devices Using FUV Time-Resolved Photoluminescence, Time-Resolved Cathodoluminescence, and Spatio-Time-Resolved Cathodoluminescence Excited Using Femtosecond Laser Pulses

DTIC Science & Technology

2013-05-22

mole fraction AlxGa1-xN alloys, and GaN were studied in this project. For this purpose, we quantified the radiative lifetimes (R) and nonradiative ...61556;R) and nonradiative lifetimes (NR) for the near-band-edge (NBE) emission by measuring the luminescence lifetimes () and...that is a fraction of radiative rate over the sum of radiative and nonradiative rates; i. e. int=(1+R/NR)-1. To improve int of practical devices

The optical properties of platinum and gold in the vacuum ultraviolet

NASA Technical Reports Server (NTRS)

Linton, R. C.

1972-01-01

The optical constants of platinum and gold thin films have been determined in the spectral region of 40 to 200 nm by reflection measurements. The highly polarized continuum of synchrotron radiation emitted by the 240-MeV electron storage ring at the Physical Sciences Laboratory of the University of Wisconsin was used as a light source for the spectrum below 120 nm, while a windowless discharge lamp coupled to a normal incidence monochromator provided a source for the longer wavelengths. Optical constants were determined by a computer program based on iterative solutions to the Fresnel equations for reflection as a function of the angle of incidence.

Alternate deposition and hydrogen doping technique for ZnO thin films

NASA Astrophysics Data System (ADS)

Myong, Seung Yeop; Lim, Koeng Su

2006-08-01

We propose an alternate deposition and hydrogen doping (ADHD) technique for polycrystalline hydrogen-doped ZnO thin films, which is a sublayer-by-sublayer deposition based on metalorganic chemical vapor deposition and mercury-sensitized photodecomposition of hydrogen doping gas. Compared to conventional post-deposition hydrogen doping, the ADHD process provides superior electrical conductivity, stability, and surface roughness. Photoluminescence spectra measured at 10 K reveal that the ADHD technique improves ultraviolet and violet emissions by suppressing the green and yellow emissions. Therefore, the ADHD technique is shown to be very promising aid to the manufacture of improved transparent conducting electrodes and light emitting materials.

Scalable fabrication of nanowire photonic and electronic circuits using spin-on glass.

PubMed

Zimmler, Mariano A; Stichtenoth, Daniel; Ronning, Carsten; Yi, Wei; Narayanamurti, Venkatesh; Voss, Tobias; Capasso, Federico

2008-06-01

We present a method which can be used for the mass-fabrication of nanowire photonic and electronic devices based on spin-on glass technology and on the photolithographic definition of independent electrical contacts to the top and the bottom of a nanowire. This method allows for the fabrication of nanowire devices in a reliable, fast, and low cost way, and it can be applied to nanowires with arbitrary cross section and doping type (p and n). We demonstrate this technique by fabricating single-nanowire p-Si(substrate)-n-ZnO(nanowire) heterojunction diodes, which show good rectification properties and, furthermore, which function as ultraviolet light-emitting diodes.

Mechanisms involved in HBr and Ar cure plasma treatments applied to 193 nm photoresists

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pargon, E.; Menguelti, K.; Martin, M.

2009-05-01

In this article, we have performed detailed investigations of the 193 nm photoresist transformations after exposure to the so-called HBr and Ar plasma cure treatments using various characterization techniques (x-ray photoelectron spectroscopy, Fourier transformed infrared, Raman analyses, and ellipsometry). By using windows with different cutoff wavelengths patched on the photoresist film, the role of the plasma vacuum ultraviolet (VUV) light on the resist modifications is clearly outlined and distinguished from the role of radicals and ions from the plasma. The analyses reveal that both plasma cure treatments induce severe surface and bulk chemical modifications of the resist films. The synergisticmore » effects of low energetic ion bombardment and VUV plasma light lead to surface graphitization or cross-linking (on the order of 10 nm), while the plasma VUV light (110-210 nm) is clearly identified as being responsible for ester and lactone group removal from the resist bulk. As the resist modification depth depends strongly on the wavelength penetration into the material, it is found that HBr plasma cure that emits near 160-170 nm can chemically modify the photoresist through its entire thickness (240 nm), while the impact of Ar plasmas emitting near 100 nm is more limited. In the case of HBr cure treatment, Raman and ellipsometry analyses reveal the formation of sp{sup 2} carbon atoms in the resist bulk, certainly thanks to hydrogen diffusion through the resist film assisted by the VUV plasma light.« less

Photoluminescent carbon quantum dots as a directly film-forming phosphor towards white LEDs.

PubMed

Zhang, Feng; Feng, Xiaoting; Zhang, Yi; Yan, Lingpeng; Yang, Yongzhen; Liu, Xuguang

2016-04-28

Photoluminescent organosilane-functionalized carbon quantum dots (CQDs), 3.0-3.5 nm in diameter, were synthesized via a facile hydrothermal method using citric acid monohydrate as a precursor and N-(3-(trimethoxysilyl) propyl) ethylenediamine as a coordinating and passivation agent. The optical properties of the as-obtained CQDs were investigated in detail. The CQD aqueous solution emits bright blue-white light under ultraviolet (UV) illumination with a quantum yield of 57.3% and high red-green-blue (RGB) spectral composition of 60.1%, and in particular the CQDs exhibit excitation-independent photoluminescence. The CQDs have a narrow size distribution around 3.1 nm and good film-forming ability through simple heat-treatment. By virtue of these excellent optical characteristics and good film-forming ability, a white light-emitting device (LED) was fabricated by combining a UV-LED chip with a single CQD phosphor film, which exhibited cool white light with a CIE coordinate of (0.31, 0.36), a color rendering index of 84 and a correlated color temperature of 6282 K. In addition, the white LED exhibits good optical stability under various working currents and for different working time intervals. Moreover, the interaction between the carbogenic core and surface groups was discussed using the DMol(3) program based on density functional theory. This research suggests the great potential of CQDs for solid-state lighting systems and reveals the effect of the surface state on the photoluminescent mechanism of CQDs.

Ultraviolet Extensions

NASA Technical Reports Server (NTRS)

2008-01-01

[figure removed for brevity, see original site] Side-by-Side Comparison Click on image for larger view

This ultraviolet image from NASA's Galaxy Evolution Explorer shows the Southern Pinwheel galaxy, also know as Messier 83 or M83. It is located 15 million light-years away in the southern constellation Hydra.

Ultraviolet light traces young populations of stars; in this image, young stars can be seen way beyond the main spiral disk of M83 up to 140,000 light-years from its center. Could life exist around one of these far-flung stars? Scientists say it's unlikely because the outlying regions of a galaxy are lacking in the metals required for planets to form.

The image was taken at scheduled intervals between March 15 and May 20, 2007. It is one of the longest-exposure, or deepest, images ever taken of a nearby galaxy in ultraviolet light. Near-ultraviolet light (or longer-wavelength ultraviolet light) is colored yellow, and far-ultraviolet light is blue.

What Lies Beyond the Edge of a Galaxy The side-by-side comparison shows the Southern Pinwheel galaxy, or M83, as seen in ultraviolet light (right) and at both ultraviolet and radio wavelengths (left). While the radio data highlight the galaxy's long, octopus-like arms stretching far beyond its main spiral disk (red), the ultraviolet data reveal clusters of baby stars (blue) within the extended arms.

The ultraviolet image was taken by NASA's Galaxy Evolution Explorer between March 15 and May 20, 2007, at scheduled intervals. Back in 2005, the telescope first photographed M83 over a shorter period of time. That picture was the first to reveal far-flung baby stars forming up to 63,000 light-years from the edge of the main spiral disk. This came as a surprise to astronomers because a galaxy's outer territory typically lacks high densities of star-forming materials.

The newest picture of M83 from the Galaxy Evolution Explorer is shown at the right, and was taken over a longer period of time. In fact, it is one of the 'deepest,' or longest-exposure, images of a nearby galaxy in ultraviolet light. This deeper view shows more clusters of stars, as well as stars in the very remote reaches of the galaxy, up to 140,000 light-years away from its core.

The view at the left is a combination of the ultraviolet picture at the right and data taken by the telescopes of the National Science Foundation's Very Large Array in New Mexico. The radio data, colored here in red, reveal extended galactic arms of gaseous hydrogen atoms, which are raw ingredients for stars. Astronomers are excited that the remote clusters of baby stars match up with the extended arms, because this helps them better understand how stars can be created out in the boondocks of a galaxy.

M83 is located 15 million light-years away in the southern constellation Hydra.

In the Galaxy Evolution Explorer image on the right, near-ultraviolet light (or longer-wavelength ultraviolet light) is colored yellow and far-ultraviolet light is blue. In the combined image at the left, far-ultraviolet light is blue, near-ultraviolet light is green, and the radio emission at a wavelength of 21 centimeters is red.

Non-contact pumping of light emitters via non-radiative energy transfer

DOEpatents

Klimov, Victor I.; Achermann, Marc

2010-01-05

A light emitting device is disclosed including a primary light source having a defined emission photon energy output, and, a light emitting material situated near to said primary light source, said light emitting material having an absorption onset equal to or less in photon energy than the emission photon energy output of the primary light source whereby non-radiative energy transfer from said primary light source to said light emitting material can occur yielding light emission from said light emitting material.

Upconversion Nanoparticles for Photodynamic Therapy and Other Cancer Therapeutics

PubMed Central

Wang, Chao; Cheng, Liang; Liu, Zhuang

2013-01-01

Photodynamic therapy (PDT) is a non-invasive treatment modality for a variety of diseases including cancer. PDT based on upconversion nanoparticles (UCNPs) has received much attention in recent years. Under near-infrared (NIR) light excitation, UCNPs are able to emit high-energy visible light, which can activate surrounding photosensitizer (PS) molecules to produce singlet oxygen and kill cancer cells. Owing to the high tissue penetration ability of NIR light, NIR-excited UCNPs can be used to activate PS molecules in much deeper tissues compared to traditional PDT induced by visible or ultraviolet (UV) light. In addition to the application of UCNPs as an energy donor in PDT, via similar mechanisms, they could also be used for the NIR light-triggered drug release or activation of 'caged' imaging or therapeutic molecules. In this review, we will summarize the latest progresses regarding the applications of UCNPs for photodynamic therapy, NIR triggered drug and gene delivery, as well as several other UCNP-based cancer therapeutic approaches. The future prospects and challenges in this emerging field will be also discussed. PMID:23650479

Far-ultraviolet spectral changes of titanium dioxide with gold nanoparticles by ultraviolet and visible light.

PubMed

Tanabe, Ichiro; Kurawaki, Yuji

2018-05-15

Attenuated total reflectance spectra including the far-ultraviolet (FUV, ≤200nm) region of titanium dioxide (TiO 2 ) with and without gold (Au) nanoparticles were measured. A newly developed external light-irradiation system enabled to observe spectral changes of TiO 2 with Au nanoparticles upon light irradiations. Absorption in the FUV region decreased and increased by the irradiation with ultraviolet and visible light, respectively. These spectral changes may reflect photo-induced electron transfer from TiO 2 to Au nanoparticles under ultraviolet light and from Au nanoparticles to TiO 2 under visible light, respectively. Copyright © 2017 Elsevier B.V. All rights reserved.

Novel yellow-emitting Sr8MgLn(PO4)7:Eu2+ (Ln=Y, La) phosphors for applications in white LEDs with excellent color rendering index.

PubMed

Huang, Chien-Hao; Chen, Teng-Ming

2011-06-20

Eu(2+)-activated Sr(8)MgY(PO(4))(7) and Sr(8)MgLa(PO(4))(7) yellow-emitting phosphors were successfully synthesized by solid-state reactions for applications in excellent color rendering index white light-emitting diodes (LEDs). The excitation and reflectance spectra of these phosphors show broad band excitation and absorption in the 250-450 nm near-ultraviolet region, which is ascribed to the 4f(7) → 4f(6)5d(1) transitions of Eu(2+). Therefore, these phosphors meet the application requirements for near-UV LED chips. Upon excitation at 400 nm, the Sr(8)MgY(PO(4))(7):Eu(2+) and Sr(8)MgLa(PO(4))(7):Eu(2+) phosphors exhibit strong yellow emissions centered at 518, 610, and 611 nm with better thermal stability than (Ba,Sr)(2)SiO(4) (570 nm) commodity phosphors. The composition-optimized concentrations of Eu(2+) in Sr(8)MgLa(PO(4))(7):Eu(2+) and Sr(8)MgY(PO(4))(7):Eu(2+) phosphors were determined to be 0.01 and 0.03 mol, respectively. A warm white-light near-UV LED was fabricated using a near-UV 400 nm chip pumped by a phosphor blend of blue-emitting BaMgAl(10)O(17):Eu(2+) and yellow-emitting Sr(8)MgY(PO(4))(7):0.01Eu(2+) or Sr(8)MgLa(PO(4))(7):0.03Eu(2+), driven by a 350 mA current. The Sr(8)MgY(PO(4))(7):0.01Eu(2+) and Sr(8)MgLa(PO(4))(7):0.03Eu(2+) containing LEDs produced a white light with Commission International de I'Eclairage (CIE) chromaticity coordinates of (0.348, 0.357) and (0.365, 0.328), warm correlated color temperatures of 4705 and 4100 K, and excellent color rendering indices of 95.375 and 91.75, respectively. © 2011 American Chemical Society

System for use with solid state dosimeter

DOEpatents

Miller, Steven D.; McDonald, Joseph C.; Eichner, Fred N.; Tomeraasen, Paul L.

1990-01-01

The present invention constitutes a system for determining the amounts of ionizing radiation to which dosimeters using thermoluminescent materials have been exposed. In accordance with this system, the thermoluminescent materials which comprise the dosimeters are first cooled by contact with a cryogenic substance such as liquified nitrogen. The thermoluminescent materials are then optically stimulated by exposure to ultraviolet light. Thereafter, the amounts of visible light emitted by the thermoluminescent materials are detected and counted as the materials are allowed to warm up to room temperature. The amounts of luminescence exhibited by the materials are related to radiation exposure and provide a sensitive measure of radiation dosage. It has been discovered that the above procedure is most effective when heavily doped thermoluminescent materials are used and that the procedure allows many useful plastic materials to now be employed in dosimeter constructions.

System for use with solid state dosimeter

DOEpatents

Miller, S.D.; McDonald, J.C.; Eichner, F.N.; Tomeraasen, P.L.

1990-09-04

The present invention constitutes a system for determining the amounts of ionizing radiation to which dosimeters using thermoluminescent materials have been exposed. In accordance with this system, the thermoluminescent materials which comprise the dosimeters are first cooled by contact with a cryogenic substance such as liquefied nitrogen. The thermoluminescent materials are then optically stimulated by exposure to ultraviolet light. Thereafter, the amounts of visible light emitted by the thermoluminescent materials are detected and counted as the materials are allowed to warm up to room temperature. The amounts of luminescence exhibited by the materials are related to radiation exposure and provide a sensitive measure of radiation dosage. It has been discovered that the above procedure is most effective when heavily doped thermoluminescent materials are used and that the procedure allows many useful plastic materials to now be employed in dosimeter constructions. 3 figs.

Microfabricated ion frequency standard

DOEpatents

Schwindt, Peter; Biedermann, Grant; Blain, Matthew G.; Stick, Daniel L.; Serkland, Darwin K.; Olsson, III, Roy H.

2010-12-28

A microfabricated ion frequency standard (i.e. an ion clock) is disclosed with a permanently-sealed vacuum package containing a source of ytterbium (Yb) ions and an octupole ion trap. The source of Yb ions is a micro-hotplate which generates Yb atoms which are then ionized by a ultraviolet light-emitting diode or a field-emission electron source. The octupole ion trap, which confines the Yb ions, is formed from suspended electrodes on a number of stacked-up substrates. A microwave source excites a ground-state transition frequency of the Yb ions, with a frequency-doubled vertical-external-cavity laser (VECSEL) then exciting the Yb ions up to an excited state to produce fluorescent light which is used to tune the microwave source to the ground-state transition frequency, with the microwave source providing a precise frequency output for the ion clock.

All-nitride AlxGa1−xN:Mn/GaN distributed Bragg reflectors for the near-infrared

PubMed Central

Capuzzo, Giulia; Kysylychyn, Dmytro; Adhikari, Rajdeep; Li, Tian; Faina, Bogdan; Tarazaga Martín-Luengo, Aitana; Bonanni, Alberta

2017-01-01

Since the technological breakthrough prompted by the inception of light emitting diodes based on III-nitrides, these material systems have emerged as strategic semiconductors not only for the lighting of the future, but also for the new generation of high-power electronic and spintronic devices. While III-nitride optoelectronics in the visible and ultraviolet spectral range is widely established, all-nitride efficient devices in the near-infrared (NIR) are still wanted. Here, through a comprehensive protocol of design, modeling, epitaxial growth and in-depth characterization, we develop AlxGa1−xN:Mn/GaN NIR distributed Bragg reflectors and we show their efficiency in combination with GaN:(Mn,Mg) layers containing Mn-Mgk complexes optically active in the near-infrared range of wavelengths. PMID:28198432

Ultraviolet spectroscopy of symbiotic nova V1016 Cyg with IUE and HST

NASA Astrophysics Data System (ADS)

Sanad, M. R.

2017-04-01

We present International Ultraviolet Explorer (IUE) & Hubble Space Telescope Space Telescope Imaging Spectrograph (HST STIS) observations of the symbiotic nova V1016 Cyg through the period 1978 - 2000. Four spectra at different times revealing the changes in line fluxes are presented. The outflow velocity of the emitting region was calculated to be 900-2000 km s-1 (FWHM). The reddening of V1016 Cyg was determined from 2200 Å absorption feature to be E (B-V) = 0.36 ± 0.02. We calculated the fluxes of CIV 1550 Å & CIII] 1909 Å emission lines produced in a stellar wind from the hot white dwarf. We determined the average wind mass loss rate to be ˜2.3 × 10-6 M⊙, the average temperature of the emitting region to be ˜1.3 × 105 K, and an average ultraviolet luminosity to be ˜2 × 1035 erg s-1. The results show that there are modulations of line fluxes with time. We attributed these spectral modulations to the changes of density and temperature in the emitting region as a result of the variable stellar wind.

Improved performance of near UV light-emitting diodes with a composition-graded p-AlGaN irregular sawtooth electron-blocking layer

NASA Astrophysics Data System (ADS)

Qin, Ping; Song, Wei-Dong; Hu, Wen-Xiao; Zhang, Yuan-Wen; Zhang, Chong-Zhen; Wang, Ru-Peng; Zhao, Liang-Liang; Xia, Chao; Yuan, Song-Yang; Yin, Yi-an; Li, Shu-Ti; Su, Shi-Chen

2016-08-01

We investigate the performances of the near-ultraviolet (about 350 nm-360 nm) light-emitting diodes (LEDs) each with specifically designed irregular sawtooth electron blocking layer (EBL) by using the APSYS simulation program. The internal quantum efficiencies (IQEs), light output powers, carrier concentrations in the quantum wells, energy-band diagrams, and electrostatic fields are analyzed carefully. The results indicate that the LEDs with composition-graded p-Al x Ga1-x N irregular sawtooth EBLs have better performances than their counterparts with stationary component p-AlGaN EBLs. The improvements can be attributed to the improved polarization field in EBL and active region as well as the alleviation of band bending in the EBL/p-AlGaN interface, which results in less electron leakage and better hole injection efficiency, thus reducing efficiency droop and enhancing the radiative recombination rate. Project supported by the National Natural Science Foundation of China (Grant Nos. 11474105 and 51172079), the Science and Technology Program of Guangdong Province, China (Grant Nos. 2015B090903078 and 2015B010105011), the Program for Changjiang Scholars and Innovative Research Team in University, China (Grant No. IRT13064), the Science and Technology Project of Guangzhou City, China (Grant No. 201607010246), and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015A010105025).

AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Lee, Tae Ho; Kim, Tae Geun

2017-07-19

A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces. We apply these H-TCEs to three near-UV light-emitting diodes (LEDs) (385 nm LEDs with p-GaN and p-AlGaN terminated surfaces and 365 nm LED with p-AlGaN terminated surface). We confirm that the light power outputs increase by 66%, 79%, and 103%, whereas the forward voltages reduce by 5.6%, 10.2%, and 8.6% for 385 nm p-GaN terminated, 385 nm p-AlGaN terminated, and 365 nm p-AlGaN terminated LEDs with H-TCEs, respectively, compared to LEDs with reference ITOs.

Electrical Current Leakage and Open-Core Threading Dislocations in AlGaN-Based Deep Ultraviolet Light-Emitting Diodes.

DOE PAGES

Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

2014-08-04

Electrical current transport through leakage paths in AlGaN-based deep ultraviolet (DUV) lightemitting diodes (LEDs) and their effect on LED performance are investigated. Open-core threading dislocations, or nanopipes, are found to conduct current through nominally insulating Al0.7Ga0.3N layers and limit the performance of DUV-LEDs. A defect-sensitive phosphoric acid etch reveals these opencore threading dislocations in the form of large, micron-scale hexagonal etch pits visible with optical microscopy, while closed-core screw-, edge-, and mixed-type threading dislocations are represented by smaller and more numerous nanometer-scale pits visible by atomic-force microscopy. The electrical and optical performances of DUV-LEDs fabricated on similar Si-doped Al0.7Ga0.3N templatesmore » are found to have a strong correlation to the density of these nanopipes, despite their small fraction (<0.1% in this study) of the total density of threading dislocations.« less

Resonantly enhanced method for generation of tunable, coherent vacuum ultraviolet radiation

DOEpatents

Glownia, James H.; Sander, Robert K.

1985-01-01

Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but to higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

Apollo 16 Astronaut Salutes the U.S. Flag on Lunar Surface

NASA Technical Reports Server (NTRS)

1972-01-01

An Apollo 16 astronaut salutes the U.S. flag on the lunar surface. The Lunar Module (LM) and Lunar Roving Vehicle (LRV) can be seen behind him. Apollo 16 launched from the Kennedy Space Center on April 16, 1972 for a 3-day stay on Earth's Moon. It's 3-man crew consisted of Thomas K. Mattingly II, Command Module pilot; John W. Young, Mission Commander; and Charles M. Duke Jr., Lunar Module pilot. The first study of the highlands area, the landing site for Apollo 16 was the Descartes Highlands. The fifth lunar landing mission out of six, Apollo 16 was famous for deploying and using an ultraviolet telescope as the first lunar observatory. The telescope photographed ultraviolet light emitted by Earth and other celestial objects. The LRV, developed by the Marshall Space Flight Center, was also used for collecting rocks and data on the mysterious lunar highlands. The mission ended April 27, 1972 as the crew splashed down into the Pacific Ocean.

Resonantly enhanced method for generation of tunable, coherent vacuum-ultraviolet radiation

DOEpatents

Glownia, J.H.; Sander, R.K.

1982-06-29

Carbon Monoxide vapor is used to generate coherent, tunable vacuum ultraviolet radiation by third-harmonic generation using a single tunable dye laser. The presence of a nearby electronic level resonantly enhances the nonlinear susceptibility of this molecule allowing efficient generation of the vuv light at modest pump laser intensities, thereby reducing the importance of a six-photon multiple-photon ionization process which is also resonantly enhanced by the same electronic level but no higher order. By choosing the pump radiation wavelength to be of shorter wavelength than individual vibronic levels used to extend tunability stepwise from 154.4 to 124.6 nm, and the intensity to be low enough, multiple-photon ionization can be eliminated. Excitation spectra of the third-harmonic emission output exhibit shifts to shorter wavelength and broadening with increasing CO pressure due to phase matching effects. Increasing the carbon monoxide pressure, therefore, allows the substantial filling in of gaps arising from the stepwise tuning thereby providing almost continuous tunability over the quoted range of wavelength emitted.

Spectroscopic chemical analysis methods and apparatus

NASA Technical Reports Server (NTRS)

Hug, William F. (Inventor); Reid, Ray D. (Inventor); Bhartia, Rohit (Inventor)

2013-01-01

Spectroscopic chemical analysis methods and apparatus are disclosed which employ deep ultraviolet (e.g. in the 200 nm to 300 nm spectral range) electron beam pumped wide bandgap semiconductor lasers, incoherent wide bandgap semiconductor light emitting devices, and hollow cathode metal ion lasers to perform non-contact, non-invasive detection of unknown chemical analytes. These deep ultraviolet sources enable dramatic size, weight and power consumption reductions of chemical analysis instruments. Chemical analysis instruments employed in some embodiments include capillary and gel plane electrophoresis, capillary electrochromatography, high performance liquid chromatography, flow cytometry, flow cells for liquids and aerosols, and surface detection instruments. In some embodiments, Raman spectroscopic detection methods and apparatus use ultra-narrow-band angle tuning filters, acousto-optic tuning filters, and temperature tuned filters to enable ultra-miniature analyzers for chemical identification. In some embodiments Raman analysis is conducted along with photoluminescence spectroscopy (i.e. fluorescence and/or phosphorescence spectroscopy) to provide high levels of sensitivity and specificity in the same instrument.

Photoluminescence properties and energy transfer in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8) phosphors for potential application in ultraviolet white light-emitting diodes.

PubMed

Yu, Hong; Zi, Wenwen; Lan, Shi; Gan, Shucai; Zou, Haifeng; Xu, Xuechun; Hong, Guangyan

2013-01-01

Sr(3) MgSi(2) O(8) :Ce(3+) , Dy(3+) phosphors were prepared by a solid-state reaction technique and the photoluminescence properties were investigated. The emission spectra show not only a band due to Ce(3+) ions (403 nm) but also as a band due to Dy(3+) ions (480, 575 nm) (UV light excitation). The photoluminescence properties reveal that effective energy transfer occurs in Ce(3+) /Dy(3+) co-doped Sr(3) MgSi(2) O(8)phosphors, and the co-doping of Ce(3+) could enhance the emission intensity of Dy(3+) to a certain extent by transferring its energy to Dy(3+) . The Ce(3+) /Dy(3+) energy transfer was investigated by emission/excitation spectra, and photoluminescence decay behaviors. In Sr2.94 MgSi2 O8 :0.01Ce(3+) , 0.05Dy(3+) phosphors, the fluorescence lifetime of Dy(3+) (from 3.35 to 27.59 ns) is increased whereas that of Ce(3+) is greatly decreased (from 43.59 to 13.55 ns), and this provides indirect evidence of the Ce(3+) to Dy(3+) energy transfer. The varied emitted color of Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) phosphors from blue to white were achieved by altering the concentration ratio of Ce(3+) and Dy(3+) . These results indicate Sr(3) MgSi(2) O(8):Ce(3+) , Dy(3+) may be as a candidate phosphor for white light-emitting diodes. Copyright © 2012 John Wiley & Sons, Ltd.

Near-infrared resonance-mediated chirp control of a coherently generated broadband deep-ultraviolet spectrum

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rybak, Leonid; Chuntonov, Lev; Gandman, Andrey

2011-09-15

We investigate the use of shaped near-infrared (NIR) femtosecond pulses to control the generation of coherent broadband deep-ultraviolet (DUV) radiation in an atomic resonance-mediated (2+1) three-photon excitation to a broad far-from-resonance continuum. Previously, we have shown control over the total emitted DUV yield. Here, we experimentally demonstrate phase control over the spectral characteristics (central frequency and bandwidth) of the emitted broadband DUV radiation. It is achieved by tuning the linear chirp applied to the exciting NIR femtosecond pulse. The study is conducted with Na vapor.

Method for determining surface coverage by materials exhibiting different fluorescent properties

NASA Technical Reports Server (NTRS)

Chappelle, Emmett W. (Inventor); Daughtry, Craig S. T. (Inventor); Mcmurtrey, James E., III (Inventor)

1995-01-01

An improved method for detecting, measuring, and distinguishing crop residue, live vegetation, and mineral soil is presented. By measuring fluorescence in multiple bands, live and dead vegetation are distinguished. The surface of the ground is illuminated with ultraviolet radiation, inducing fluorescence in certain molecules. The emitted fluorescent emission induced by the ultraviolet radiation is measured by means of a fluorescence detector, consisting of a photodetector or video camera and filters. The spectral content of the emitted fluorescent emission is characterized at each point sampled, and the proportion of the sampled area covered by residue or vegetation is calculated.

Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

PubMed

Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

2017-12-01

Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

Direct observation of the core/double-shell architecture of intense dual-mode luminescent tetragonal bipyramidal nanophosphors

NASA Astrophysics Data System (ADS)

Kim, Su Yeon; Jeong, Jong Seok; Mkhoyan, K. Andre; Jang, Ho Seong

2016-05-01

Highly efficient downconversion (DC) green-emitting LiYF4:Ce,Tb nanophosphors have been synthesized for bright dual-mode upconversion (UC) and DC green-emitting core/double-shell (C/D-S) nanophosphors--Li(Gd,Y)F4:Yb(18%),Er(2%)/LiYF4:Ce(15%),Tb(15%)/LiYF4--and the C/D-S structure has been proved by extensive scanning transmission electron microscopy (STEM) analysis. Colloidal LiYF4:Ce,Tb nanophosphors with a tetragonal bipyramidal shape are synthesized for the first time and they show intense DC green light via energy transfer from Ce3+ to Tb3+ under illumination with ultraviolet (UV) light. The LiYF4:Ce,Tb nanophosphors show 65 times higher photoluminescence intensity than LiYF4:Tb nanophosphors under illumination with UV light and the LiYF4:Ce,Tb is adapted into a luminescent shell of the tetragonal bipyramidal C/D-S nanophosphors. The formation of the DC shell on the core significantly enhances UC luminescence from the UC core under irradiation of near infrared light and concurrently generates DC luminescence from the core/shell nanophosphors under UV light. Coating with an inert inorganic shell further enhances the UC-DC dual-mode luminescence by suppressing the surface quenching effect. The C/D-S nanophosphors show 3.8% UC quantum efficiency (QE) at 239 W cm-2 and 73.0 +/- 0.1% DC QE. The designed C/D-S architecture in tetragonal bipyramidal nanophosphors is rigorously verified by an energy dispersive X-ray spectroscopy (EDX) analysis, with the assistance of line profile simulation, using an aberration-corrected scanning transmission electron microscope equipped with a high-efficiency EDX. The feasibility of these C/D-S nanophosphors for transparent display devices is also considered.Highly efficient downconversion (DC) green-emitting LiYF4:Ce,Tb nanophosphors have been synthesized for bright dual-mode upconversion (UC) and DC green-emitting core/double-shell (C/D-S) nanophosphors--Li(Gd,Y)F4:Yb(18%),Er(2%)/LiYF4:Ce(15%),Tb(15%)/LiYF4--and the C/D-S structure has been proved by extensive scanning transmission electron microscopy (STEM) analysis. Colloidal LiYF4:Ce,Tb nanophosphors with a tetragonal bipyramidal shape are synthesized for the first time and they show intense DC green light via energy transfer from Ce3+ to Tb3+ under illumination with ultraviolet (UV) light. The LiYF4:Ce,Tb nanophosphors show 65 times higher photoluminescence intensity than LiYF4:Tb nanophosphors under illumination with UV light and the LiYF4:Ce,Tb is adapted into a luminescent shell of the tetragonal bipyramidal C/D-S nanophosphors. The formation of the DC shell on the core significantly enhances UC luminescence from the UC core under irradiation of near infrared light and concurrently generates DC luminescence from the core/shell nanophosphors under UV light. Coating with an inert inorganic shell further enhances the UC-DC dual-mode luminescence by suppressing the surface quenching effect. The C/D-S nanophosphors show 3.8% UC quantum efficiency (QE) at 239 W cm-2 and 73.0 +/- 0.1% DC QE. The designed C/D-S architecture in tetragonal bipyramidal nanophosphors is rigorously verified by an energy dispersive X-ray spectroscopy (EDX) analysis, with the assistance of line profile simulation, using an aberration-corrected scanning transmission electron microscope equipped with a high-efficiency EDX. The feasibility of these C/D-S nanophosphors for transparent display devices is also considered. Electronic supplementary information (ESI) available: XRD patterns, PL and PLE spectra, SEM and HR-TEM images, PL decay times, photographs showing the transparent nanophosphor solutions and their dual-mode luminescence, and additional EDX data. See DOI: 10.1039/c5nr05722a

HUBBLE'S ULTRAVIOLET VIEWS OF NEARBY GALAXIES YIELD CLUES TO EARLY UNIVERSE

NASA Technical Reports Server (NTRS)

2002-01-01

Astronomers are using these three NASA Hubble Space Telescope images to help tackle the question of why distant galaxies have such odd shapes, appearing markedly different from the typical elliptical and spiral galaxies seen in the nearby universe. Do faraway galaxies look weird because they are truly weird? Or, are they actually normal galaxies that look like oddballs, because astronomers are getting an incomplete picture of them, seeing only the brightest pieces? Light from these galaxies travels great distances (billions of light-years) to reach Earth. During its journey, the light is 'stretched' due to the expansion of space. As a result, the light is no longer visible, but has been shifted to the infrared where present instruments are less sensitive. About the only light astronomers can see comes from regions where hot, young stars reside. These stars emit mostly ultraviolet light. But this light is stretched, appearing as visible light by the time it reaches Earth. Studying these distant galaxies is like trying to put together a puzzle with some of the pieces missing. What, then, do distant galaxies really look like? Astronomers studied 37 nearby galaxies to find out. By viewing these galaxies in ultraviolet light, astronomers can compare their shapes with those of their distant relatives. These three Hubble telescope pictures, taken with the Wide Field and Planetary Camera 2, represent a sampling from that survey. Astronomers observed the galaxies in ultraviolet and visible light to study all the stars that make up these 'cities of stars.' The results of their survey support the idea that astronomers are detecting the 'tip of the iceberg' of very distant galaxies. Based on these Hubble ultraviolet images, not all the faraway galaxies necessarily possess intrinsically odd shapes. The results are being presented today at the 197th meeting of the American Astronomical Society in San Diego, CA. The central region of the 'star-burst' spiral galaxy at far left, NGC 3310, shows young and old stars evenly distributed. If this were the case with most galaxies, astronomers would be able to recognize faraway galaxies fairly easily. In most galaxies, however, the stars are segregated by age, making classifying the distant ones more difficult. NGC 3310 is 46 million light-years from Earth in the constellation Ursa Major. The image was taken Sept. 12-13, 2000. The middle image is an example of a tiny, youthful spiral galaxy. ESO 418-008 is representative of the myriad of dwarf galaxies astronomers have seen in deep surveys. These galaxies are much smaller than typical ones like our Milky Way. In this galaxy, the population of stars is more strongly segregated by age. The older stars [red] reside in the center; the younger [blue], in the developing spiral arms. These small, young galaxies may be the building blocks of galaxy formation. ESO 418-008 is 56 million light-years from Earth in the southern constellation Fornax. The image was taken Oct. 10, 2000. The picture at right shows a cosmic collision between two galaxies, UGC 06471 and UGC 06472. These collisions occurred frequently in the early universe, producing galaxies of unusual shapes. The Hubble telescope has spied many such galaxies in the deep field surveys. The ultraviolet images of this galaxy merger suggest the presence of large amounts of dust, which were produced by massive stars that formed before or during this dramatic collision. This dust reddens the starlight in many places, just like a dusty atmosphere reddens the sunset. Studying the effects of this nearby collision could help astronomers explain the peculiar shapes seen in some of the distant galaxies. UGC 06471 and UGC 06472 are 145 million light-years from Earth in the constellation Ursa Major. The image was taken July 11, 2000. Photo credits: NASA, Rogier Windhorst (Arizona State University, Tempe, AZ), and the Hubble mid-UV team

White light-emitting organic electroluminescent devices

DOEpatents

Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

2006-06-20

A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

Light collection optics for measuring flux and spectrum from light-emitting devices

DOEpatents

McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

2016-05-24

Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

Characterization and luminescence properties of Sr3Gd): Sm3+ orange-red phosphor

NASA Astrophysics Data System (ADS)

Yang, Zaifa; Xu, Denghui; Sun, Jiayue; Sun, Yumei; Du, Haiyan

2015-10-01

Reddish-orange emitting phosphors, Sr3Gd): Sm3+, were successfully synthesized by a conventional solid-state reaction. The crystal structure of the phosphors was characterized by x-ray diffraction. The excitation spectra and emission spectra were utilized to characterize the luminescence properties of the as-prepared phosphors. The results show that the phosphor consisted of some sharp emission peaks of Sm3+ ions centered at 564, 600, 647, and 707 nm, respectively. The critical distance of Sr3Gd0.93): 0.07Sm3+ was calculated to be 19.18 Å and the lifetime value of the sample was 1.63 ms. The band gap of Sr3Gd) was estimated to be about 2.74 eV from the diffuse reflection spectrum. The optimum doping concentration is 7 mol. % and the quenching occurs via dipole-dipole interaction according to Dexter's theory. The Commission Internationale de L'Eclairage value of Sr3Gd): Sm3+ phosphors presented that it has high color purity. These results indicated that the Sr3Gd): Sm3+ may be a promising reddish-orange emitting phosphor for cost-effective near ultraviolet white light-emitting diodes.

Recent advances in conjugated polymers for light emitting devices.

PubMed

Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

Recent Advances in Conjugated Polymers for Light Emitting Devices

PubMed Central

AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

2011-01-01

A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

Aperture lamp

DOEpatents

MacLennan, Donald A.; Turner, Brian P.

2003-01-01

A discharge lamp includes means for containing a light emitting fill, the fill being capable of absorbing light at one wavelength and re-emitting the light at a different wavelength, the light emitted from the fill having a first spectral power distribution in the absence of reflection of light back into the fill; means for exciting the fill to cause the fill to emit light; and means for reflecting some of the light emitted by the fill back into the fill while allowing some light to exit, the exiting light having a second spectral power distribution with proportionately more light in the visible region as compared to the first spectral power distribution, wherein the light re-emitted by the fill is shifted in wavelength with respect to the absorbed light and the magnitude of the shift is in relation to an effective optical path length. Another discharge lamp includes an envelope; a fill which emits light when excited disposed in the envelope; a source of excitation power coupled to the fill to excite the fill and cause the fill to emit light; and a reflective ceramic structure disposed around the envelope and defining an light emitting opening, wherein the structure comprises a sintered body built up directly on the envelope and made from a combination of alumina and silica.

Ultraviolet Radiation in Wound Care: Sterilization and Stimulation

PubMed Central

Gupta, Asheesh; Avci, Pinar; Dai, Tianhong; Huang, Ying-Ying; Hamblin, Michael R.

2013-01-01

Significance Wound care is an important area of medicine considering the increasing age of the population who may have diverse comorbidities. Light-based technology comprises a varied set of modalities of increasing relevance to wound care. While low-level laser (or light) therapy and photodynamic therapy both have wide applications in wound care, this review will concentrate on the use of ultraviolet (UV) radiation. Recent Advances UVC (200–280 nm) is highly antimicrobial and can be directly applied to acute wound infections to kill pathogens without unacceptable damage to host tissue. UVC is already widely applied for sterilization of inanimate objects. UVB (280–315 nm) has been directly applied to the wounded tissue to stimulate wound healing, and has been widely used as extracorporeal UV radiation of blood to stimulate the immune system. UVA (315–400 nm) has distinct effects on cell signaling, but has not yet been widely applied to wound care. Critical Issues Penetration of UV light into tissue is limited and optical technology may be employed to extend this limit. UVC and UVB can damage DNA in host cells and this risk must be balanced against beneficial effects. Chronic exposure to UV can be carcinogenic and this must be considered in planning treatments. Future Directions New high-technology UV sources, such as light-emitting diodes, lasers, and microwave-generated UV plasma are becoming available for biomedical applications. Further study of cellular signaling that occurs after UV exposure of tissue will allow the benefits in wound healing to be better defined. PMID:24527357

Observatories Combine to Crack Open the Crab Nebula

NASA Image and Video Library

2017-12-08

Astronomers have produced a highly detailed image of the Crab Nebula, by combining data from telescopes spanning nearly the entire breadth of the electromagnetic spectrum, from radio waves seen by the Karl G. Jansky Very Large Array (VLA) to the powerful X-ray glow as seen by the orbiting Chandra X-ray Observatory. And, in between that range of wavelengths, the Hubble Space Telescope's crisp visible-light view, and the infrared perspective of the Spitzer Space Telescope. This video starts with a composite image of the Crab Nebula, a supernova remnant that was assembled by combining data from five telescopes spanning nearly the entire breadth of the electromagnetic spectrum: the Very Large Array, the Spitzer Space Telescope, the Hubble Space Telescope, the XMM-Newton Observatory, and the Chandra X-ray Observatory. The video dissolves to the red-colored radio-light view that shows how a neutron star’s fierce “wind” of charged particles from the central neutron star energized the nebula, causing it to emit the radio waves. The yellow-colored infrared image includes the glow of dust particles absorbing ultraviolet and visible light. The green-colored Hubble visible-light image offers a very sharp view of hot filamentary structures that permeate this nebula. The blue-colored ultraviolet image and the purple-colored X-ray image shows the effect of an energetic cloud of electrons driven by a rapidly rotating neutron star at the center of the nebula. Read more: go.nasa.gov/2r0s8VC Credits: NASA, ESA, J. DePasquale (STScI)

Evidence for Type Ia Supernova Diversity from Ultraviolet Observations with the Hubble Space Telescope

NASA Technical Reports Server (NTRS)

Wang, Xiaofeng; Wang, Lifan; Filippenko, Alexei; Baron, Eddie; Kromer, Markus; Jack, Dennis; Zhang, Tianmeng; Aldering, Greg; Antilogus, Pierre; Arnett, W. David;

Using RGB displays to portray color realistic imagery to animal eyes

PubMed Central

Johnsen, Sönke

2017-01-01

Abstract RGB displays effectively simulate millions of colors in the eyes of humans by modulating the relative amount of light emitted by 3 differently colored juxtaposed lights (red, green, and blue). The relationship between the ratio of red, green, and blue light and the perceptual experience of that light has been well defined by psychophysical experiments in humans, but is unknown in animals. The perceptual experience of an animal looking at an RGB display of imagery designed for humans is likely to poorly represent an animal’s experience of the same stimulus in the real world. This is due, in part, to the fact that many animals have different numbers of photoreceptor classes than humans do and that their photoreceptor classes have peak sensitivities centered over different parts of the ultraviolet and visible spectrum. However, it is sometimes possible to generate videos that accurately mimic natural stimuli in the eyes of another animal, even if that animal’s sensitivity extends into the ultraviolet portion of the spectrum. How independently each RGB phosphor stimulates each of an animal’s photoreceptor classes determines the range of colors that can be simulated for that animal. What is required to determine optimal color rendering for another animal is a device capable of measuring absolute or relative quanta of light across the portion of the spectrum visible to the animal (i.e., a spectrometer), and data on the spectral sensitivities of the animal’s photoreceptor classes. In this article, we outline how to use such equipment and information to generate video stimuli that mimic, as closely as possible, an animal’s color perceptual experience of real-world objects. Key words: color vision, computer animation, perception, video playback, virtual reality. PMID:29491960

A novel single-phase white phosphor NaBaBO{sub 3}:Dy{sup 3+},K{sup +} for near-UV white light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, Jianghui; Cheng, Qijin; Wu, Jieyang

Highlights: • A white phosphor NaBaBO{sub 3}:Dy{sup 3+},K{sup +} with CIE coordinate (0.301, 0.308) was synthesized. • The optimum doping concentration of Dy{sup 3+} ions was found. • The effect and mechanism of K{sup +} ion as a charge compensator were discussed. • Temperature-dependent PL property of NaBaBO{sub 3}:Dy{sup 3+},K{sup +} was studied. • PL decay and quantum efficiency behaviors of the samples were investigated. - Abstract: A novel Dy{sup 3+}-doped NaBaBO{sub 3} white-emitting phosphor has been prepared by high temperature solid-state reaction method. The phase structure and luminescence properties of NaBaBO{sub 3}:Dy{sup 3+},K{sup +} samples were investigated. Photoluminescence resultsmore » show that the as-prepared samples could be effectively excited by near-ultraviolet (NUV) light and generate white light emission due to the {sup 4}F{sub 9/2} → {sup 6}H{sub 15/2} (blue) transition and {sup 4}F{sub 9/2} → {sup 6}H{sub 13/2} (yellow) transition of Dy{sup 3+} ions, respectively. The optimum doping concentration of Dy{sup 3+} ions in the NaBaBO{sub 3} host was determined to be 5.0 mol% and the CIE chromaticity of the sample was determined to be (0.301, 0.308). Moreover, the mechanism of K{sup +} ion as a charge compensator on the improvement of photoluminescence property and the effect of temperature on the photoluminescence property of NaBaBO{sub 3}:Dy{sup 3+},K{sup +} were investigated. Furthermore, photoluminescence decay and quantum efficiency behaviors of NaBaBO{sub 3}:Dy{sup 3+},K{sup +} were also studied. The present work demonstrates that the NaBaBO{sub 3}:Dy{sup 3+},K{sup +} phosphor is a potential candidate for NUV white light emitting diodes.« less

Effect of ultraviolet light on mood, depressive disorders and well-being.

PubMed

Veleva, Bistra I; van Bezooijen, Rutger L; Chel, Victor G M; Numans, Mattijs E; Caljouw, Monique A A

2018-06-01

Human and animal studies have shown that exposure to ultraviolet light can incite a chain of endocrine, immunologic, and neurohumoral reactions that might affect mood. This review focuses on the evidence from clinical trials and observational studies on the effect of ultraviolet light on mood, depressive disorders, and well-being. A search was made in PubMed, Embase, Web of Science, Cochrane, Psychinfo, CINAHL, Academic Search Premier and Science Direct, and the references of key papers, for clinical trials and observational studies describing the effect of ultraviolet light applied to skin or eyes on mood, depressive disorders, and well-being. Of the seven studies eligible for this review, the effect of ultraviolet light on mood, depressive symptoms and seasonal affective disorders was positive in six of them. Of the seven studies, six demonstrated benefit of exposure to ultraviolet radiation and improvement in mood which supports a positive effect of ultraviolet light on mood. Because of the small number of the studies and their heterogeneity, more research is warranted to confirm and document this correlation. © 2018 The Authors. Photodermatology, Photoimmunology & Photomedicine Published by John Wiley & Sons Ltd.

Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

NASA Astrophysics Data System (ADS)

Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

2013-08-01

Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

Emission spectra of electron irradiated metal foils

DOE Office of Scientific and Technical Information (OSTI.GOV)

Emerson, L. C.; Arakawa, E. T.; Ritchie, R. H.

1963-08-09

Thesis submitted to Univ. of Tennessee by L. C. Emerson. An experimental investigation of the visible and ultraviolet light emitted when a charged particle moves across a boundary between two media with different dielectric properties was carried out. The spectral distributions of the light from evaporated foils of copper, germanium, silver, tin, and antimony bombarded by a 1.5-microamp beam of electrons were measured as a function of electron energy between 25 and 100 kev. The analysis was carried out with a Seya-Namioka vacuum ultraviolet spectrometer, Glan-Foucault prism polarizer, and a quartz- window photomultiplier. Calibration of the optical system with amore » NBS tungsten filament lamp enabled the intensity measurements to be carried out on an absolute basis. The experimental results for light polarized parallel to the plane containing the photon and the electron were compared with the calculated intensity of transftion radiation, and in general the agreement was found to be excellent. The component of the photon intensity polarized perpendicular to this plane was compared with the calculated intensity of the optical portion of the bremsstrahlung spectrum. The predicted dependence on electron energy, photon wavelength, and foil thickness was observed although the measured yield was higher than that predicted by theory. The possibility of contributions from Cherenkov radiation and plasma radiation is also considered, but it is shown that it would be unlikely for these radiations to be observed under the experimental conditions of this study.« less

Micronucleated erythrocytes in newborns rats exposed to three different types of ultraviolet-A (UVA) lamps from commonly uses devices.

PubMed

Zúñiga-González, Guillermo M; Gómez-Meda, Belinda C; Zamora-Perez, Ana L; Martínez-González, María A; Bautista-Bejarano, Miguel A; Patiño-Valenzuela, Sebastián; Armendáriz-Borunda, Juan; Lazalde-Ramos, Blanca P; Sánchez-Parada, María G; Gallegos-Arreola, Martha P

2016-12-01

Exposure to ultraviolet-A (UVA) light can accidentally cause adverse effects in the skin and eyes. UVA induces DNA damage directly by creating pyrimidine dimers or by the formation of reactive oxygen species that can indirectly affect DNA integrity. UVA radiation is emitted by lamps from everyday devices. In adult rats, micronucleated erythrocytes (MNE) are removed from the circulation by the spleen. However, in newborn rats, MNE have been observed in peripheral blood erythrocytes. The objective of this study was to use micronucleus tests to evaluate the DNA damage caused in newborn rats exposed to UVA light from three different types of UVA lamps obtained from commonly used devices: counterfeit detectors, insecticide devices, and equipment used to harden resins for artificial nails. Rat neonates were exposed to UVA lamps for 20min daily for 6days. The neonates were sampled every third day, and the numbers of MNE and micronucleated polychromatic erythrocytes (MNPCE) in the peripheral blood were determined. The rat neonates exposed to the three types of UVA lamps showed increased numbers of MNE and MNPCE from 48h to 144h (P<0.05 and P<0.001 respectively). However, no relationship was observed between the number of MNE and the wattage of the lamps. In conclusion, under these conditions, UVA light exposure induced an increase in MNE without causing any apparent damage to the skin. Copyright © 2016 Elsevier B.V. All rights reserved.

Ultraviolet light-an FDA approved technology

USDA-ARS?s Scientific Manuscript database

Ultraviolet Light (254 nm) is a U.S. Food and Drug Administration approved nonthermal intervention technology that can be used for decontamination of food and food contact surfaces. Ultraviolet light is a green technology that leaves no chemical residues. Results from our laboratory indicate that ex...

Silicon nanoparticle-ZnS nanophosphors for ultraviolet-based white light emitting diode

NASA Astrophysics Data System (ADS)

Stupca, Matthew; Nayfeh, Osama M.; Hoang, Tuan; Nayfeh, Munir H.; Alhreish, Bahjat; Boparai, Jack; AlDwayyan, Abdullah; AlSalhi, Mohamad

2012-10-01

Present red phosphor converters provide spectra dominated by sharp lines and suffer from availability and stability issues which are not ideal for color mixing in display or solid state lighting applications. We examine the use of mono dispersed 3 nm silicon nanoparticles, with inhomogeneously broadened red luminescence as an effective substitute for red phosphors. We tested a 3-phase hybrid nanophosphor consisting of ZnS:Ag, ZnS:Cu,Au,Al, and nanoparticles. Correlated color temperature is examined under UV and LED pumping in the range 254, 365-400 nm. The temperature is found reasonably flat for the longer wavelengths and drops for the shorter wavelengths while the color rendering index increases. The photo stability of the phosphors relative to the silicon nanoparticles is recorded. The variation in the temperature is analyzed in terms of the strength of inter-band-gap transition and continuum band to band transitions.

Combinatorial search for green and blue phosphors of high thermal stabilities under UV excitation based on the K(Sr1-x-y)PO4:Tb3+ xEu2+y system.

PubMed

Chan, Ting-Shan; Liu, Yao-Min; Liu, Ru-Shi

2008-01-01

The present investigation aims at the synthesis of KSr 1-x-y PO 4:Tb(3+) x Eu(2+) y phosphors using the combinatorial chemistry method. We have developed square-type arrays consisting of 121 compositions to investigate the optimum composition and luminescence properties of KSrPO 4 host matrix under 365 nm ultraviolet (UV) light. The optimized compositions of phosphors were found to be KSr 0.93PO 4:Tb(3+) 0.07 (green) and KSr 0.995PO 4:Eu(2+) 0.005 (blue). These phosphors showed good thermal luminescence stability better than commercially available YAG:Ce at temperature above 200 degrees C. The result indicates that the KSr 1-x-y PO 4:Tb(3+) x Eu (2+)y can be potentially useful as a UV radiation-converting phosphor for light-emitting diodes.

Toward blue emission in ZnO based LED

NASA Astrophysics Data System (ADS)

Viana, Bruno; Pauporté, Thierry; Lupan, Oleg; Le Bahers, Tangui; Ciofini, Ilaria

2012-03-01

The bandgap engineering of ZnO nanowires by doping is of great importance for tunable light emitting diode (LED) applications. We present a combined experimental and computational study of ZnO doping with Cd or Cu atoms in the nanomaterial. Zn1-xTMxO (TM=Cu, Cd) nanowires have been epitaxially grown on magnesium-doped p-GaN by electrochemical deposition. The Zn1-xTMxO/p-GaN heterojunction was integrated in a LED structure. Nanowires act as the light emitters and waveguides. At room temperature, TM-doped ZnO based LEDs exhibit low-threshold emission voltage and electroluminescence emission shifted from ultraviolet to violet-blue spectral region compared to pure ZnO LEDs. The emission wavelength can be tuned by changing the transition metal (TM) content in the ZnO nanomaterial and the shift is discussed, including insights from DFT computational investigations.

Planar field emitters and high efficiency photocathodes based on ultrananocrystalline diamond

DOEpatents

Sumant, Anirudha V.; Baryshev, Sergey V.; Antipov, Sergey P.

2016-08-16

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

Planar Field Emitters and High Efficiency Photocathodes Based on Ultrananocrystalline Diamond

NASA Technical Reports Server (NTRS)

Sumant, Anirudha V. (Inventor); Baryshev, Sergey V. (Inventor); Antipov, Sergey P. (Inventor)

2016-01-01

A method of forming a field emitter comprises disposing a first layer on a substrate. The first layer is seeded with nanodiamond particles. The substrate with the first layer disposed thereon is maintained at a first temperature and a first pressure in a mixture of gases which includes nitrogen. The first layer is exposed to a microwave plasma to form a nitrogen doped ultrananocrystalline diamond film on the first layer, which has a percentage of nitrogen in the range of about 0.05 atom % to about 0.5 atom %. The field emitter has about 10.sup.12 to about 10.sup.14 emitting sites per cm.sup.2. A photocathode can also be formed similarly by forming a nitrogen doped ultrananocrystalline diamond film on a substrate similar to the field emitter, and then hydrogen terminating the film. The photocathode is responsive to near ultraviolet light as well as to visible light.

LED-based UV source for monitoring spectroradiometer properties

NASA Astrophysics Data System (ADS)

Sildoja, Meelis-Mait; Nevas, Saulius; Kouremeti, Natalia; Gröbner, Julian; Pape, Sven; Pendsa, Stefan; Sperfeld, Peter; Kemus, Fabian

2018-06-01

A compact and stable UV monitoring source based on state-of-the-art commercially available ultraviolet light emitting diodes (UV-LEDs) has been developed. It is designed to trace the radiometric stability—both responsivity and wavelength scale—of array spectroradiometers measuring direct solar irradiance in the wavelength range between 300 nm and 400 nm. The spectral irradiance stability of the UV-LED-based light source observed in the laboratory after seasoning (burning-in) the individual LEDs was better than 0.3% over a 12 h period of continuous operation. The integral irradiance measurements of the source over a period of several months, where the UV-LED source was not operated continuously between the measurements, showed stability within 0.3%. In-field measurements of the source with an array spectroradiometer indicated the stability of the source to be within the standard uncertainty of the spectroradiometer calibration, which was within 1% to 2%.

Plastic lab-on-a-chip for fluorescence excitation with integrated organic semiconductor lasers.

PubMed

Vannahme, Christoph; Klinkhammer, Sönke; Lemmer, Uli; Mappes, Timo

2011-04-25

Laser light excitation of fluorescent markers offers highly sensitive and specific analysis for bio-medical or chemical analysis. To profit from these advantages for applications in the field or at the point-of-care, a plastic lab-on-a-chip with integrated organic semiconductor lasers is presented here. First order distributed feedback lasers based on the organic semiconductor tris(8-hydroxyquinoline) aluminum (Alq3) doped with the laser dye 4-dicyanomethylene-2-methyl-6-(p-dimethylaminostyril)-4H-pyrane (DCM), deep ultraviolet induced waveguides, and a nanostructured microfluidic channel are integrated into a poly(methyl methacrylate) (PMMA) substrate. A simple and parallel fabrication process is used comprising thermal imprint, DUV exposure, evaporation of the laser material, and sealing by thermal bonding. The excitation of two fluorescent marker model systems including labeled antibodies with light emitted by integrated lasers is demonstrated.

Performance evaluation of modulation and multiple access schemes in ultraviolet optical wireless connections for two atmosphere thickness cases.

PubMed

Raptis, Nikos; Pikasis, Evangelos; Syvridis, Dimitris

2016-08-01

The exploitation of optical wireless communication channels in a non-line-of-sight regime is studied for point-to-point and networking configurations considering the use of light-emitting diodes. Two environments with different scattering center densities are considered, assuming operation at 265 nm. The bit error rate performance of both pulsed and multicarrier modulation schemes is examined, using numerical approaches. In the networking scenario, a central node only receives data, one node transmits useful data, and the rest of them act as interferers. The performance of the desirable node's transmissions is evaluated. The access to the medium is controlled by a code division multiple access scheme.

Efficacy of Inactivation of Human Enteroviruses by Multiple ...

EPA Pesticide Factsheets

Background: Ultraviolet (UV) light has been successfully used for treating a broad suite of pathogens without the concomitant formation of carcinogenic disinfection by-products (DBPs). However, conventional mercury UV lamps have some practical limitations in water treatment applications, such as the inefficiency of energy consumption and more importantly potential mercury contamination upon disposal of the lamps. The recent invention of a novel light-emitting-diodes (LED) device generating germicidal UV wavelengths could eliminate the aforementioned limitations. In this study, we investigated the efficacy of multiple-wavelength UV LEDs for inactivating USEPA contaminant candidate list (CCL) RNA enteroviruses.Methods: Of 12 enterovirus species, serotype representatives of the four human enteric species (enterovirus A-D) such as coxsackievirus A10 (CVA10), echovirus 30 (Echo30), poliovirus 1 (PV1), and enterovirus 70 (EV70) respectively were selected as testing RNA viruses. Bench-scale performance evaluation was conducted using a collimated beam (CB) apparatus with LEDs emitting at 260 nm, 280 nm, and the combination of 260|280 nm together, as well as a monochromatic low-pressure (LP) UV lamp at 254 nm for comparison. The CB tests were performed with mixed stocks of four viruses. Infectious virus concentrations were determined using an integrated cell culture reverse transcriptase quantitative PCR (ICC-RTqPCR).Results: The 260 nm LED was most effective at inactiva

Efficacy of Inactivation of Human Enteroviruses by Multiple ...

EPA Pesticide Factsheets

Ultraviolet (UV) light has been successfully used for treating a broad suite of pathogens without the concomitant formation of carcinogenic disinfection by-products (DBPs). However, conventional mercury UV lamps have some practical limitations in water treatment applications, such as the inefficiency of energy consumption and more importantly potential mercury contamination upon disposal of the lamps. The recent invention of a novel light-emitting-diodes (LED) device generating germicidal UV wavelengths could eliminate the aforementioned limitations. In this study, we investigated the efficacy of multiple-wavelength UV LEDs for inactivating USEPA contaminant candidate list (CCL) RNA enteroviruses. Of 12 enterovirus species, serotype representatives of the four human enteric species (enterovirus A-D) such as coxsackievirus A10 (CVA10), echovirus 30 (Echo30), poliovirus 1 (PV1), and enterovirus 70 (EV70) respectively were selected as testing RNA viruses. Bench-scale performance evaluation was conducted using a collimated beam (CB) apparatus with LEDs emitting at 260 nm, 280 nm, and the combination of 260|280 nm together, as well as a monochromatic low-pressure (LP) UV lamp at 254 nm for comparison. The CB tests were performed with mixed stocks of four viruses. Infectious virus concentrations were determined using an integrated cell culture reverse transcriptase quantitative PCR (ICC-RTqPCR). The 260 nm LED was most effective at inactivating all enteroviruses teste

Synthesis and photoluminescence of EuII in barium zinc orthosilicate: a novel green color emitting phosphor for white-LEDs.

PubMed

Kasturi, S; Sivakumar, V; Varadaraju, U V

2017-05-01

A series of Eu 2+ -activated barium orthosilicates (BaZnSiO 4 ) were synthesized using a high-temperature solid-state reaction. A photoluminescence excitation study of Eu 2 + shows a broad absorption band in the range of 270-450 nm, with multiple absorption peak maxima (310, 350 and 400 nm) due to 4f-5d electronic transition. The emission spectra of all the compositions show green color emission (in the spectral region 450-550 nm with a peak maximum at 502 nm and a shoulder at ~ 490 nm) with appropriate Comission Internationale de l'Eclairage (CIE) color coordinates. The two emission peaks are due to the presence of Eu 2 + in two different Ba sites in the BaZnSiO 4 host lattice. The energy transfers between the Eu 2 + ions in BaZnSiO 4 host are elucidated from the critical concentration quenching data based on the electronic multipolar interaction. All Eu 2 + -activated BaZnSiO 4 phosphor materials can be efficiently excited in the ultraviolet (UV) to near UV-region (270-420 nm), making them attractive candidate as a green phosphor for solid state lighting-white light-emitting diodes. Copyright © 2016 John Wiley & Sons, Ltd.

Red Emission of SrAl2O4:Mn4+ Phosphor for Warm White Light-Emitting Diodes

NASA Astrophysics Data System (ADS)

Chi, N. T. K.; Tuan, N. T.; Lien, N. T. K.; Nguyen, D. H.

2018-05-01

In this work, SrAl2O4:Mn4+ phosphor is prepared by co-precipitation. The phase structure, morphology, composition and luminescent performance of the phosphor are investigated in detail with x-ray diffraction, field emission scanning electron microscopy, steady-state photoluminescence (PL) spectra, and temperature-dependent PL measurements. The phosphor shows a strong red emission peak at ˜ 690 nm, which is due to the transition between electronic levels and the electric dipole transition 2Eg to 4A2g of Mn4+ ions located at the sites with D3d local symmetry. The sample doped with 0.04 mol.% Mn4+ exhibits intense red emission with high thermal stability and appropriate International Commission on Illumination (CIE) coordinates (x = 0.6959, y = 0.2737). It is also found that the phosphor absorption in an extended band from 250 nm to 500 nm has three peaks at 320 nm, 405 nm, and 470 nm, which match well with the emission band of ultraviolet (UV) lighting emission diode (LED) or blue LED chips. These results demonstrate that SrAl2O4:Mn4+ phosphor can play the role of activator in narrow red-emitting phosphor, which is potentially useful in UV (˜ 320 nm) or blue (˜ 460 nm) LED.

Photocatalytic characteristic and photodegradation kinetics of toluene using N-doped TiO2 modified by radio frequency plasma.

PubMed

Shie, Je-Lueng; Lee, Chiu-Hsuan; Chiou, Chyow-San; Chen, Yi-Hung; Chang, Ching-Yuan

2014-01-01

This study investigates the feasibility of applications of the plasma surface modification of photocatalysts and the removal of toluene from indoor environments. N-doped TiO2 is prepared by precipitation methods and calcined using a muffle furnace (MF) and modified by radio frequency plasma (RF) at different temperatures with light sources from a visible light lamp (VLL), a white light-emitting diode (WLED) and an ultraviolet light-emitting diode (UVLED). The operation parameters and influential factors are addressed and prepared for characteristic analysis and photo-decomposition examination. Furthermore, related kinetic models are established and used to simulate the experimental data. The characteristic analysis results show that the RF plasma-calcination method enhanced the Brunauer Emmett Teller surface area of the modified photocatalysts effectively. For the elemental analysis, the mass percentages of N for the RF-modified photocatalyst are larger than those of MF by six times. The aerodynamic diameters of the RF-modifiedphotocatalyst are all smaller than those of MF. Photocatalytic decompositions of toluene are elucidated according to the Langmuir-Hinshelwood model. Decomposition efficiencies (eta) of toluene for RF-calcined methods are all higher than those of commercial TiO2 (P25). Reaction kinetics ofphoto-decomposition reactions using RF-calcined methods with WLED are proposed. A comparison of the simulation results with experimental data is also made and indicates good agreement. All the results provide useful information and design specifications. Thus, this study shows the feasibility and potential use of plasma modification via LED in photocatalysis.

Low temperature preparation of Ag-doped ZnO nanowire arrays for sensor and light-emitting diode applications

NASA Astrophysics Data System (ADS)

Lupan, O.; Viana, B.; Cretu, V.; Postica, V.; Adelung, R.; Pauporté, T.

2016-02-01

Transition metal doped-oxide semiconductor nanostructures are important to achieve enhanced and new properties for advanced applications. We describe the low temperature preparation of ZnO:Ag nanowire/nanorod (NW/NR) arrays by electrodeposition at 90 °C. The NWs have been characterized by SEM, EDX, transmittance and photoluminescence (PL) measurements. The integration of Ag in the crystal is shown. Single nanowire/nanorod of ZnO:Ag was integrated in a nanosensor structure leading to new and enhanced properties. The ultraviolet (UV) response of the nanosensor was investigated at room temperature. Experimental results indicate that ZnO:Ag (0.75 μM) nanosensor possesses faster response/recovery time and better response to UV light than those reported in literature. The sensor structure has been also shown to give a fast response for the hydrogen detection with improved performances compared to pristine ZnO NWs. ZnO:Ag nanowire/nanorod arrays electrochemically grown on p-type GaN single crystal layer is also shown to act as light emitter in LED structures. The emission wavelength is red-shifted compared to pristine ZnO NW array. At low Ag concentration a single UV-blue emission is found whereas at higher concentration of dopant the emission is broadened and extends up to the red wavelength range. Our study indicates that high quality ZnO:Ag NW/NR prepared at low temperature by electrodeposition can serve as building nanomaterials for new sensors and light emitting diodes (LEDs) structures with low-power consumption.

Ultraviolet safety assessments of insect light traps.

PubMed

Sliney, David H; Gilbert, David W; Lyon, Terry

2016-01-01

Near-ultraviolet (UV-A: 315-400 nm), "black-light," electric lamps were invented in 1935 and ultraviolet insect light traps (ILTs) were introduced for use in agriculture around that time. Today ILTs are used indoors in several industries and in food-service as well as in outdoor settings. With recent interest in photobiological lamp safety, safety standards are being developed to test for potentially hazardous ultraviolet emissions. A variety of UV "Black-light" ILTs were measured at a range of distances to assess potential exposures. Realistic time-weighted human exposures are shown to be well below current guidelines for human exposure to ultraviolet radiation. These UV-A exposures would be far less than the typical UV-A exposure in the outdoor environment. Proposals are made for realistic ultraviolet safety standards for ILT products.

Scatter Measurements Made With Ultraviolet Light

NASA Astrophysics Data System (ADS)

Anthon, Erik W.

1985-09-01

The quality of optical surfaces is generally evaluated by how much light (normally visible light) is scattered by the surface. Most optical glasses and many coating materials are completely opaque to ultraviolet light (253.7 nm). Ultraviolet light tends to scatter much more than visible light. Scatter measurements made with ultraviolet light are therefore very sensitive and the scatter from second surfaces and from the interior (bulk) of the optical material is eliminated by the opacity. A novel scattermeter that operates with ultraviolet light has been developed. The construction and operation of this scattermeter will be described. Cleaning soon becomes the limiting factor when measuring the surfaces with very low level of scatter. Sensitivity to repeated cleaning has been investigated. Different surfaces are compared and uniformity of surfaces is measured by mapping a surface area with an x-y stage. Polished glass surfaces generally have much higher scatter than natural glass surfaces (fire polished, drawn or floated surfaces). Very low scatter levels have been found on thin drawn glass.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Protection from visible light by commonly used textiles is not predicted by ultraviolet protection.

PubMed

Van den Keybus, Caroline; Laperre, Jan; Roelandts, Rik

2006-01-01

Interest is increasing in the prevention of acute and chronic actinic damage provided by clothing. This interest has focused mainly on protection against ultraviolet irradiation, but it has now also turned to protection against visible light. This change is mainly due to the action spectrum in the visible light range of some photodermatoses and the increasing interest in photodynamic therapy. The ultraviolet protection provided by commercially available textiles can be graded by determining an ultraviolet protection factor. Several methods have already been used to determine the ultraviolet protection factor. The fact that protection from visible light by textiles cannot be predicted by their ultraviolet protection makes the situation more complicated. This study attempts to determine whether or not the ultraviolet protection factor value of a particular textile is a good parameter for gauging its protection in the visible light range and concludes that a protection factor of textile materials against visible light needs to be developed. This development should go beyond the protection factor definition used in this article, which has some limitations, and should take into account the exact action spectrum for which the protection is needed.

Enhancement of white-light-emission from single-phase Sr5(PO4)3F:Eu(2+),Mn(2+) phosphors for near-UV white LEDs.

PubMed

Feng, Yaomiao; Huang, Jinping; Liu, Lili; Liu, Jie; Yu, Xibin

2015-09-07

A series of single-phase broadband white-light-emitting Sr5(PO4)3F:Eu(2+),Mn(2+) phosphors were prepared by a solid state reaction. The luminescence property, and the crystal and electronic structures of the fluorophosphates were studied by photoluminescence analysis, XRD Rietveld refinement and density functional theory calculation (DFT), respectively. Under near ultraviolet excitation in the 250 to 430 nm wavelength range, the phosphors exhibit two emission bands centered at 440 and 556 nm, caused by the Eu(2+) and Mn(2+) ions. By altering the relative ratios of Eu(2+) and Mn(2+) in the compounds, the emission color could be modulated from blue to white. The efficient energy transfer from the Eu(2+) to Mn(2+) ions could be ascribed to the well crystallized host lattice and the facile substitution of Eu(2+) and Mn(2+) for Sr(2+) sites due to similar ionic radii. A series of fluxes were investigated to improve the photoluminescence intensity. When KCl was used as flux in the synthesis, the photoluminescence intensity of Sr5(PO4)3F:Eu(2+),Mn(2+) was enhanced by 85% compared with no fluxes added. These results demonstrate that the single-phase Sr5(PO4)3F:Eu(2+),Mn(2+) with enhanced luminescence efficiency could be promising as a near UV-convertible direct white-light-emitting phosphor for WLED applications.

Electron-transporting layer doped with cesium azide for high-performance phosphorescent and tandem white organic light-emitting devices

NASA Astrophysics Data System (ADS)

Yu, Yaoyao; Chen, Xingming; Jin, Yu; Wu, Zhijun; Yu, Ye; Lin, Wenyan; Yang, Huishan

2017-07-01

Cesium azide was employed as an effective n-dopant in the electron-transporting layer (ETL) of organic light-emitting devices (OLEDs) owing to its low deposition temperature and high ambient stability. By doping cesium azide onto 4,7-diphenyl-1,10-phenanthroline, a green phosphorescent OLED having best efficiencies of 66.25 cd A-1, 81.22 lm W-1 and 18.82% was realized. Moreover, the efficiency roll-off from 1000 cd m-2 to 10 000 cd m-2 is only 12.9%, which is comparable with or even lower than that of devices utilizing the co-host system. Physical mechanisms for the improvement of device performance were studied in depth by analyzing the current density-voltage (J-V) characteristics of the electron-only devices. In particular, by comparing the J-V characteristics of the electron-only devices instead of applying the complicated ultraviolet photoelectron spectrometer measurements, we deduced the decrease in barrier height for electron injection at the ETL/cathode contact. Finally, an efficient tandem white OLED utilizing the n-doped layer in the charge generation unit (CGU) was constructed. As far as we know, this is the first report on the application of this CGU for fabricating tandem white OLEDs. The emissions of the tandem device are all in the warm white region from 1213 cd m-2 to 10870 cd m-2, as is beneficial to the lighting application.

Reshaping Light-Emitting Diodes To Increase External Efficiency

NASA Technical Reports Server (NTRS)

Rogowski, Robert; Egalon, Claudio

1995-01-01

Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

Improvements to III-nitride light-emitting diodes through characterization and material growth

NASA Astrophysics Data System (ADS)

Getty, Amorette Rose Klug

A variety of experiments were conducted to improve or aid the improvement of the efficiency of III-nitride light-emitting diodes (LEDs), which are a critical area of research for multiple applications, including high-efficiency solid state lighting. To enhance the light extraction in ultraviolet LEDs grown on SiC substrates, a distributed Bragg reflector (DBR) optimized for operation in the range from 250 to 280 nm has been developed using MBE growth techniques. The best devices had a peak reflectivity of 80% with 19.5 periods, which is acceptable for the intended application. DBR surfaces were sufficiently smooth for subsequent epitaxy of the LED device. During the course of this work, pros and cons of AlGaN growth techniques, including analog versus digital alloying, were examined. This work highlighted a need for more accurate values of the refractive index of high-Al-content AlxGa1-xNin the UV wavelength range. We present refractive index results for a wide variety of materials pertinent to the fabrication of optical III-nitride devices. Characterization was done using Variable-Angle Spectroscopic Ellipsometry. The three binary nitrides, and all three ternaries, have been characterized to a greater or lesser extent depending on material compositions available. Semi-transparent p-contact materials and other thin metals for reflecting contacts have been examined to allow optimization of deposition conditions and to allow highly accurate modeling of the behavior of light within these devices. Standard substrate materials have also been characterized for completeness and as an indicator of the accuracy of our modeling technique. We have demonstrated a new technique for estimating the internal quantum efficiency (IQE) of nitride light-emitting diodes. This method is advantageous over the standard low-temperature photoluminescence-based method of estimating IQE, as the new method is conducted under the same conditions as normal device operation. We have developed processing techniques and have characterized patternable absorbing materials which eliminate scattered light within the device, allowing an accurate simulation of the device extraction efficiency. This efficiency, with measurements of the input current and optical output power, allow a straightforward calculation of the IQE. Two sets of devices were measured, one of material grown in-house, with a rough p-GaN surface, and one of commercial LED material, with smooth interfaces and very high internal quantum efficiency.

Lamp method and apparatus using multiple reflections

DOEpatents

MacLennan, Donald A.; Turner, Brian P.

2001-01-01

An electrodeless microwave discharge lamp includes an envelope with a discharge forming fill disposed therein which emits light, the fill being capable of absorbing light at one wavelength and re-emitting the absorbed light at a different wavelength, the light emitted from the fill having a first spectral power distribution in the absence of reflection of light back into the fill, a source of microwave energy coupled to the fill to excite the fill and cause the fill to emit light, and a reflector disposed within the microwave cavity and configured to reflect at least some of the light emitted by the fill back into the fill while allowing some light to exit, the exiting light having a second spectral power distribution with proportionately more light in the visible region as compared to the first spectral power distribution, wherein the light re-emitted by the fill is shifted in wavelength with respect to the absorbed light and the magnitude of the shift is in relation to an effective optical path length.

Hybrid chip-on-board LED module with patterned encapsulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soer, Wouter Anthon; Helbing, Rene; Huang, Guan

Different wavelength conversion materials, or different concentrations of a wavelength conversion material are used to encapsulate the light emitting elements of different colors of a hybrid light emitting module. In an embodiment of this invention, second light emitting elements (170) of a particular color are encapsulated with a transparent second encapsulant (120;420;520), while first light emitting elements (160) of a different color are encapsulated with a wavelength conversion first encapsulant (110;410;510). In another embodiment of this invention, a particular second set of second and third light emitting elements (170,580) of different colors is encapsulated with a different encapsulant than anothermore » first set of first light emitting elements (160).« less

Perovskite Materials for Light-Emitting Diodes and Lasers.

PubMed

Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

2016-08-01

Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Novel Ultraviolet Light Absorbing Polymers For Optical Applications

NASA Astrophysics Data System (ADS)

Doddi, Namassivaya; Yamada, Akira; Dunks, Gary B.

1988-07-01

Ultraviolet light absorbing monomers have been developed that can be copolymerized with acrylates. The composition of the resultant stable copolymers can be adjusted to totally block the transmission of light below about 430 nm. Fabrication of lenses from the materials is accomplished by lathe cutting and injection molding procedures. These ultraviolet light absorbing materials are non-mutagenic and non-toxic and are currently being used in intraocular lenses.

Hello to Arms

NASA Technical Reports Server (NTRS)

2005-01-01

This image highlights the hidden spiral arms (blue) that were discovered around the nearby galaxy NGC 4625 by the ultraviolet eyes of NASA's Galaxy Evolution Explorer.

The image is composed of ultraviolet and visible-light data, from the Galaxy Evolution Explorer and the California Institute of Technology's Digitized Sky Survey, respectively. Near-ultraviolet light is colored green; far-ultraviolet light is colored blue; and optical light is colored red.

As the image demonstrates, the lengthy spiral arms are nearly invisible when viewed in optical light while bright in ultraviolet. This is because they are bustling with hot, newborn stars that radiate primarily ultraviolet light.

The youthful arms are also very long, stretching out to a distance four times the size of the galaxy's core. They are part of the largest ultraviolet galactic disk discovered so far.

Located 31 million light-years away in the constellation Canes Venatici, NGC 4625 is the closest galaxy ever seen with such a young halo of arms. It is slightly smaller than our Milky Way, both in size and mass. However, the fact that this galaxy's disk is forming stars very actively suggests that it might evolve into a more massive and mature galaxy resembling our own.

The armless companion galaxy seen below NGC 4625 is called NGC 4618. Astronomers do not know why it lacks arms but speculate that it may have triggered the development of arms in NGC 4625.

The Inherent Visible Light Signature of an Intense Underwater Ultraviolet Light Source Due to Combined Raman and Fluorescence Effects

DTIC Science & Technology

2000-01-01

Humans cannot see ultraviolet light. The blue-sensitive cones in the retina would respond weakly to ultraviolet wavelengths if exposed to them, but...545, 1992. 3. C. S. Yentsch, and D. A. Phinney, " Autofluorescence and Raman scattering in the marine underwater environment," Ocean Optics X, SPIE

Apollo 16 Crew Portrait

NASA Technical Reports Server (NTRS)

1972-01-01

This is the Apollo 16 lunar landing mission crew portrait. Pictured from left to right are: Thomas K. Mattingly II, Command Module pilot; John W. Young, Mission Commander; and Charles M. Duke Jr., Lunar Module pilot. Launched from the Kennedy Space Center on April 16, 1972, Apollo 16 spent three days on Earth's Moon. The first study of the highlands area, the landing site for Apollo 16 was the Descartes Highlands. The fifth lunar landing mission out of six, Apollo 16 was famous for deploying and using an ultraviolet telescope as the first lunar observatory. The telescope photographed ultraviolet light emitted by Earth and other celestial objects. The Lunar Roving Vehicle, developed by the Marshall Space Flight Center, was also used for collecting rocks and data on the mysterious lunar highlands. In this photo, astronaut John W. Young photographs Charles M. Duke, Jr. collecting rock samples at the Descartes landing site. Duke stands by Plum Crater while the Lunar Roving Vehicle waits parked in the background. High above, Thomas K. Mattingly orbits in the Command Module. The mission ended April 27, 1972 as the crew splashed down into the Pacific Ocean.

Anatomy of a Shooting Star

NASA Technical Reports Server (NTRS)

2007-01-01

[figure removed for brevity, see original site] Annotated Version

A close-up view of a star racing through space faster than a speeding bullet can be seen in this image from NASA's Galaxy Evolution Explorer. The star, called Mira (pronounced My-rah), is traveling at 130 kilometers per second, or 291,000 miles per hour. As it hurls along, it sheds material that will be recycled into new stars, planets and possibly even life.

In this image, Mira is moving from left to right. It is visible as the pinkish dot in the bulb shape at right. The yellow dot below is a foreground star. Mira is traveling so fast that it's creating a bow shock, or build-up of gas, in front of it, as can be seen here at right.

Like a boat traveling through water, a bow shock forms ahead of the star in the direction of its motion. Gas in the bow shock is heated and then mixes with the cool hydrogen gas in the wind that is blowing off Mira. This heated hydrogen gas then flows around behind the star, forming a wake.

Why is the wake of material glowing? When the hydrogen gas is heated, it transitions into a higher-energy state, which then loses energy by emitting ultraviolet light - a process called fluorescence. The Galaxy Evolution Explorer has special instruments that can detect this ultraviolet light.

A similar fluorescence process is responsible for the Northern Lights -- a glowing, green aurora that can be seen from northern latitudes. However, in that case nitrogen and oxygen gas are fluorescing with visible light.

Streams and a loop of material can also be seen coming off Mira. Astronomers are still investigating what these streams are, but they suspect that they are denser parts of Mira's wind perhaps flowing out of the star's poles.

This image consists of data captured by both the far- and near-ultraviolet detectors on the Galaxy Evolution Explorer between November 18 and December 15, 2006. It has a total exposure time of about 3 hours.

Environmental barrier material for organic light emitting device and method of making

DOEpatents

Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

2003-02-18

An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

Formation of the thioester, N,S-diacetylcysteine, from acetaldehyde and N,N'-diacetylcystine in aqueous solution with ultraviolet light

NASA Technical Reports Server (NTRS)

Weber, A. L.

1981-01-01

The thioester, N,S-diacetylcysteine, is formed during the illumination of phosphate buffered (pH 7.0) aqueous solutions of acetaldehyde and N,N'-diacetylcystine with ultraviolet light. The yield of N,S-diacetylcysteine relative to N-acetylcysteine and unidentified products progressively increases as ultraviolet light below 239 nm, 253 nm and 281 nm is cut off with optical filters. When ultraviolet light below 320 nm is removed with an optical filter, there is no detectable reaction. Illumination of 0.025 M N,N'-diacetylcystine with 0.5 M and 1.0 M acetaldehyde with filtered ultraviolet light gives, respectively, 20% and 80% yields of N,S-diacetylcysteine. In the reaction with 1.0 M acetaldehyde, N-acetylcysteine forms early in the reaction and later decreases with its conversion to N,S-diacetylcysteine. The prebiotic significance of these reactions is discussed.

Graphene Oxide Transparent Hybrid Film and Its Ultraviolet Shielding Property.

PubMed

Xie, Siyuan; Zhao, Jianfeng; Zhang, Bowu; Wang, Ziqiang; Ma, Hongjuan; Yu, Chuhong; Yu, Ming; Li, Linfan; Li, Jingye

2015-08-19

Herein, we first reported a facile strategy to prepare functional Poly(vinyl alcohol) (PVA) hybrid film with well ultraviolet (UV) shielding property and visible light transmittance using graphene oxide nanosheets as UV-absorber. The absorbance of ultraviolet light at 300 nm can be up to 97.5%, while the transmittance of visible light at 500 nm keeps 40% plus. This hybrid film can protect protein from UVA light induced photosensitive damage, remarkably.

Near unity ultraviolet absorption in graphene without patterning

NASA Astrophysics Data System (ADS)

Zhu, Jinfeng; Yan, Shuang; Feng, Naixing; Ye, Longfang; Ou, Jun-Yu; Liu, Qing Huo

2018-04-01

Enhancing the light-matter interaction of graphene is an important issue for related photonic devices and applications. In view of its potential ultraviolet applications, we aim to achieve extremely high ultraviolet absorption in graphene without any nanostructure or microstructure patterning. By manipulating the polarization and angle of incident light, the ultraviolet power can be sufficiently coupled to the optical dissipation of graphene based on single-channel coherent perfect absorption in an optimized multilayered thin film structure. The ultraviolet absorbance ratios of single and four atomic graphene layers are enhanced up to 71.4% and 92.2%, respectively. Our research provides a simple and efficient scheme to trap ultraviolet light for developing promising photonic and optoelectronic devices based on graphene and potentially other 2D materials.

Ultraviolet photometry from the Orbiting Astronomical Observatory. XXVIII - Ultraviolet light curves for Alpha Lupi and BW Vulpeculae

NASA Technical Reports Server (NTRS)

Lesh, J. R.

1978-01-01

Photometric data from the Wisconsin Experiment Package on OAO-2 have been used to construct light curves at three ultraviolet wavelengths for Alpha Lup and at seven wavelengths for BW Vul. Both stars are well-known variables of the Beta Cephei (Beta Canis Majoris) type. The light curves for Alpha Lup are in good agreement with the radial-velocity period. A temperature variation of 400-500 K is derived. The BW Vul light curves confirm recent ephemerides based on a secularly varying period and show a stillstand near light maximum at some wavelengths. Both stars exhibit increasing light amplitude at the shortest ultraviolet wavelengths. There is little evidence for cycle-to-cycle variations on a time scale of the order of 1 day.

Light emitting fabric technologies for photodynamic therapy.

PubMed

Mordon, Serge; Cochrane, Cédric; Tylcz, Jean Baptiste; Betrouni, Nacim; Mortier, Laurent; Koncar, Vladan

2015-03-01

Photodynamic therapy (PDT) is considered to be a promising method for treating various types of cancer. A homogeneous and reproducible illumination during clinical PDT plays a determinant role in preventing under- or over-treatment. The development of flexible light sources would considerably improve the homogeneity of light delivery. The integration of optical fiber into flexible structures could offer an interesting alternative. This paper aims to describe different methods proposed to develop Side Emitting Optical Fibers (SEOF), and how these SEOF can be integrated in a flexible structure to improve light illumination of the skin during PDT. Four main techniques can be described: (i) light blanket integrating side-glowing optical fibers, (ii) light emitting panel composed of SEOF obtained by micro-perforations of the cladding, (iii) embroidery-based light emitting fabric, and (iv) woven-based light emitting fabric. Woven-based light emitting fabrics give the best performances: higher fluence rate, best homogeneity of light delivery, good flexibility. Copyright © 2014 Elsevier B.V. All rights reserved.

Top-emitting organic light-emitting diodes.

PubMed

Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

2011-11-07

We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

Ultraviolet-C light effect on physicochemical, bioactive, microbiological, and sensorial characteristics of carrot (Daucus carota) beverages.

PubMed

Hernández-Carranza, Paola; Ruiz-López, Irving Israel; Pacheco-Aguirre, Francisco Manuel; Guerrero-Beltrán, José Ángel; Ávila-Sosa, Raúl; Ochoa-Velasco, Carlos Enrique

2016-09-01

The aim of this research was to evaluate the effect of ultraviolet-C light on physicochemical, bioactive, microbial, and sensory characteristics of carrot beverages. Beverages were formulated with different concentrations of carrot juice (60, 80, and 100% [v/v]) and treated with ultraviolet-C light at different flow rates (0, 0.5, 3.9, and 7.9 mL s(-1)) and times (5, 10, 15, 20, and 30 min), equivalent to ultraviolet-C dosages of 13.2, 26.4, 39.6, 52.8, and 79.2 J cm(-2) Total soluble solids, pH, and titratable acidity were not affected by the ultraviolet-C light treatment. Ultraviolet-C light significantly affected (p < 0.05) color parameters of pure juice; however, at low concentration of juice, total color change was slightly affected (ΔE = 2.0 ± 0.7). Phenolic compounds (4.1 ± 0.1, 5.2 ± 0.2, and 8.6 ± 0.3 mg of GAE 100 mL(-1) of beverage with 60, 80, and 100% of juice, respectively) and antioxidant capacity (6.1 ± 0.4, 8.5 ± 0.4, and 9.4 ± 0.3 mg of Trolox 100 mL(-1) of beverage with 60, 80, and 100% of juice, respectively) of carrot beverages were not affected by ultraviolet-C light treatment. Microbial kinetics showed that mesophiles were mostly reduced at high flow rates in carrot beverages with 60% of juice. Maximum logarithmic reductions for mesophiles and total coliforms were 3.2 ± 0.1 and 2.6 ± 0.1, respectively, after 30 min of ultraviolet-C light processing. Beverages were well accepted (6-7) by judges who did not perceive the difference between untreated and Ultraviolet-C light treated beverages. © The Author(s) 2016.

Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

NASA Astrophysics Data System (ADS)

Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

2018-03-01

This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

Which way is up? Asymmetric spectral input along the dorsal-ventral axis influences postural responses in an amphibious annelid.

PubMed

Jellies, John

2014-11-01

Medicinal leeches are predatory annelids that exhibit countershading and reside in aquatic environments where light levels might be variable. They also leave the water and must contend with terrestrial environments. Yet, leeches generally maintain a dorsal upward position despite lacking statocysts. Leeches respond visually to both green and near-ultraviolet (UV) light. I used LEDs to test the hypothesis that ventral, but not dorsal UV would evoke compensatory movements to orient the body. Untethered leeches were tested using LEDs emitting at red (632 nm), green (513 nm), blue (455 nm) and UV (372 nm). UV light evoked responses in 100 % of trials and the leeches often rotated the ventral surface away from it. Visible light evoked no or modest responses (12-15 % of trials) and no body rotation. Electrophysiological recordings showed that ventral sensilla responded best to UV, dorsal sensilla to green. Additionally, a higher order interneuron that is engaged in a variety of parallel networks responded vigorously to UV presented ventrally, and both the visible and UV responses exhibited pronounced light adaptation. These results strongly support the suggestion that a dorsal light reflex in the leech uses spectral comparisons across the dorsal-ventral axis rather than, or in addition to, luminance.

Visible light neutralizes the effect produced by ultraviolet radiation in proteins.

PubMed

Espinoza, J Horacio; Mercado-Uribe, Hilda

2017-02-01

The damage produced by UV-C radiation (100-280nm) in organisms and cells is a well known fact. The main reactions of proteins to UV-C radiation consist in the alteration of their secondary structures, exposure of hydrophobic residues, unfolding and aggregation. Furthermore, it has been found that electromagnetic radiation of lower energy (visible light, where wavelengths are between 400 and 750nm) also induces different disturbances in biomolecules. For instance, it has been observed that blue visible light from emitting diodes (LEDs) produces severe damage in murine cone photoreceptor-derived cells, and it can be even more harmful for some organisms than UV radiation. Recently, it has been found that the exposure of proteins to green and red light produces conformational changes, considerably increasing their cohesion enthalpies. This is presumably due to the strengthening of the hydrogen bonds and the formation of new ones. Therefore, it seems that visible light acts contrary to what it is observed for UV-C: instead of unfolding the proteins it folds them further, halting the damage produced by UV-C. This can be understood if we consider the modification of the folding energy-landscape; visible light induces the descent of the proteins into deeper states impeding the unfolding produced by UV-C. Copyright © 2016 Elsevier B.V. All rights reserved.

The Proof of the ``Vortex Theory of Matter''

NASA Astrophysics Data System (ADS)

Moon, Russell

2009-11-01

According to the Vortex Theory, protons and electrons are three-dimensional holes connected by fourth-dimensional vortices. It was further theorized that when photons are absorbed then readmitted by atoms, the photon is absorbed into the proton, moves through the fourth-dimensional vortex, then reemerges back into three-dimensional space through the electron. To prove this hypothesis, an experiment was conducted using a hollow aluminum sphere containing a powerful permanent magnet suspended directly above a zinc plate. Ultraviolet light was then shined upon the zinc. The zinc emits electrons via the photoelectric effect that are attracted to the surface of the aluminum sphere. The sphere was removed from above the zinc plate and repositioned above a sensitive infrared digital camera in another room. The ball and camera were placed within a darkened box inside a Faraday cage. Light was shined upon the zinc plate and the picture taken by the camera was observed. When the light was turned on above the zinc plate in one room, the camera recorded increased light coming from the surface of the sphere within the other room; when the light was turned off, the intensity of the infrared light coming from the surface of the sphere was suddenly diminished. Five other tests were then performed to eliminate other possible explanations such as quantum-entangled electrons.

The Proof of the ``Vortex Theory of Matter''

NASA Astrophysics Data System (ADS)

Gridnev, Konstantin; Moon, Russell; Vasiliev, Victor

2009-11-01

According to the Vortex Theory, protons and electrons are three-dimensional holes connected by fourth-dimensional vortices. It was further theorized that when photons are absorbed then readmitted by atoms, the photon is absorbed into the proton, moves through the fourth-dimensional vortex, then reemerges back into three-dimensional space through the electron^2. To prove this hypothesis, an experiment was conducted using a hollow aluminum sphere containing a powerful permanent magnet suspended directly above a zinc plate. Ultraviolet light was then shined upon the zinc. The zinc emits electrons via the photoelectric effect that are attracted to the surface of the aluminum sphere. The sphere was removed from above the zinc plate and repositioned above a sensitive infrared digital camera in another room. The ball and camera were placed within a darkened box inside a Faraday cage. Light was shined upon the zinc plate and the picture taken by the camera was observed. When the light was turned on above the zinc plate in one room, the camera recorded increased light coming from the surface of the sphere within the other room; when the light was turned off, the intensity of the infrared light coming from the surface of the sphere was suddenly diminished. Five other tests were then performed to eliminate other possible explanations such as quantum-entangled electrons.

The Proof of the ``Vortex Theory of Matter''

NASA Astrophysics Data System (ADS)

Gridnev, Konstantin; Moon, Russell; Vasiliev, Victor

2009-10-01

According to the Vortex Theory, protons and electrons are three-dimensional holes connected by fourth-dimensional vortices. It was further theorized that when photons are absorbed then readmitted by atoms, the photon is absorbed into the proton, moves through the fourth-dimensional vortex, then reemerges back into three-dimensional space through the electron^2. To prove this hypothesis, an experiment was conducted using a hollow aluminum sphere containing a powerful permanent magnet suspended directly above a zinc plate. Ultraviolet light was then shined upon the zinc. The zinc emits electrons via the photoelectric effect that are attracted to the surface of the aluminum sphere. The sphere was removed from above the zinc plate and repositioned above a sensitive infrared digital camera in another room. The ball and camera were placed within a darkened box inside a Faraday cage. Light was shined upon the zinc plate and the picture taken by the camera was observed. When the light was turned on above the zinc plate in one room, the camera recorded increased light coming from the surface of the sphere within the other room; when the light was turned off, the intensity of the infrared light coming from the surface of the sphere was suddenly diminished. Five other tests were then performed to eliminate other possible explanations such as quantum-entangled electrons.

The Proof of the ``Vortex Theory of Matter''

NASA Astrophysics Data System (ADS)

Moon, Russell; Gridnev, Konstantin; Vasiliev, Victor

2010-02-01

According to the Vortex Theory, protons and electrons are three-dimensional holes connected by fourth-dimensional vortices. It was further theorized that when photons are absorbed then readmitted by atoms, the photon is absorbed into the proton, moves through the fourth-dimensional vortex, then reemerges back into three-dimensional space through the electron. To prove this hypothesis, an experiment was conducted using a hollow aluminum sphere containing a powerful permanent magnet suspended directly above a zinc plate. Ultraviolet light was then shined upon the zinc. The zinc emits electrons via the photoelectric effect that are attracted to the surface of the aluminum sphere. The sphere was removed from above the zinc plate and repositioned above a sensitive infrared digital camera in another room. The ball and camera were placed within a darkened box inside a Faraday cage. Light was shined upon the zinc plate and the picture taken by the camera was observed. When the light was turned on above the zinc plate in one room, the camera recorded increased light coming from the surface of the sphere within the other room; when the light was turned off, the intensity of the infrared light coming from the surface of the sphere was suddenly diminished. Five other tests were then performed to eliminate other possible explanations such as quantum-entangled electrons. )

Alternatives to Outdoor Daylight Illumination for Photodynamic Therapy--Use of Greenhouses and Artificial Light Sources.

PubMed

Lerche, Catharina M; Heerfordt, Ida M; Heydenreich, Jakob; Wulf, Hans Christian

2016-02-29

Daylight-mediated photodynamic therapy (daylight PDT) is a simple and pain free treatment of actinic keratoses. Weather conditions may not always allow daylight PDT outdoors. We compared the spectrum of five different lamp candidates for indoor "daylight PDT" and investigated their ability to photobleach protoporphyrin IX (PpIX). Furthermore, we measured the amount of PpIX activating daylight available in a glass greenhouse, which can be an alternative when it is uncomfortable for patients to be outdoors. The lamps investigated were: halogen lamps (overhead and slide projector), white light-emitting diode (LED) lamp, red LED panel and lamps used for conventional PDT. Four of the five light sources were able to photobleach PpIX completely. For halogen light and the red LED lamp, 5000 lux could photobleach PpIX whereas 12,000 lux were needed for the white LED lamp. Furthermore, the greenhouse was suitable for daylight PDT since the effect of solar light is lowered only by 25%. In conclusion, we found four of the five light sources and the greenhouse usable for indoor daylight PDT. The greenhouse is beneficial when the weather outside is rainy or windy. Only insignificant ultraviolet B radiation (UVB) radiation passes through the greenhouse glass, so sun protection is not needed.

Alternatives to Outdoor Daylight Illumination for Photodynamic Therapy—Use of Greenhouses and Artificial Light Sources

PubMed Central

Lerche, Catharina M.; Heerfordt, Ida M.; Heydenreich, Jakob; Wulf, Hans Christian

2016-01-01

Daylight-mediated photodynamic therapy (daylight PDT) is a simple and pain free treatment of actinic keratoses. Weather conditions may not always allow daylight PDT outdoors. We compared the spectrum of five different lamp candidates for indoor “daylight PDT” and investigated their ability to photobleach protoporphyrin IX (PpIX). Furthermore, we measured the amount of PpIX activating daylight available in a glass greenhouse, which can be an alternative when it is uncomfortable for patients to be outdoors. The lamps investigated were: halogen lamps (overhead and slide projector), white light-emitting diode (LED) lamp, red LED panel and lamps used for conventional PDT. Four of the five light sources were able to photobleach PpIX completely. For halogen light and the red LED lamp, 5000 lux could photobleach PpIX whereas 12,000 lux were needed for the white LED lamp. Furthermore, the greenhouse was suitable for daylight PDT since the effect of solar light is lowered only by 25%. In conclusion, we found four of the five light sources and the greenhouse usable for indoor daylight PDT. The greenhouse is beneficial when the weather outside is rainy or windy. Only insignificant ultraviolet B radiation (UVB) radiation passes through the greenhouse glass, so sun protection is not needed. PMID:26938525

Characterization of dehydration-induced luminescence of kaolinite

NASA Technical Reports Server (NTRS)

Lahav, N.; Coyne, L.; Lawless, J. G.

1985-01-01

The dehydration-induced luminescence of a colloidal kaolinite is investigated experimentally, with particular attention given to the effect of various treatments on the luminescence characteristics. It is found that the total photon count of the emitted light is linearly related to the film thickness up to a thickness of 30 microns; mechanical stress in the form of grinding increases the photon output and produces extensive changes in the emission kinetics. A direct check of the emission wavelength dependence (by using color filters) indicates that roughly 75 percent of the emission occurs in the wavelength range below 410 nm. It is also found that incorporation of fluorescent molecules into the kaolinite paste increases the photon output and may indicate the transfer of ultraviolet photons to the fluorescent probe.

Inside supernova 1987A

NASA Technical Reports Server (NTRS)

Mccray, Richard; Shull, J. Michael; Sutherland, Peter

1987-01-01

The future evolution of the electromagnetic spectrum of the supernova 1987A is considered. It is shown that conventional models for supernova explosions predict that within several months a spectacular display of X-rays and UV emission lines will be seen from SN 1987A as the envelope expands to reveal the inner debris of the explosion. Two likely scenarios are considered: first, that the debris produces strong gamma rays from radioactive Co-56, and second, that an X-ray-emitting pulsar exists at the center. It is also predicted that a bright infrared echo will soon appear as a result of reprocessing of the optical/ultraviolet light by circumstellar grains; the luminosity of this echo can provide a sensitive test of the mass-loss history of the supernova progenitor.

Stability enhancement and electronic tunability of two-dimensional SbIV compounds via surface functionalization

NASA Astrophysics Data System (ADS)

Zhou, Wenhan; Guo, Shiying; Liu, Xuhai; Cai, Bo; Song, Xiufeng; Zhu, Zhen; Zhang, Shengli

2018-01-01

We propose a family of hydrogenated- and halogenated-SbIV (SbIVX-2) materials that simultaneously have two-dimensional (2D) structures, high stability and appealing electronic properties. Based on first-principles total-energy and vibrational-spectra calculations, SbIVX-2 monolayers are found both thermally and dynamically stable. Varying IV and X elements can rationally tune the electronic properties of SbIVX-2 monolayers, effectively modulating the band gap from 0 to 3.42 eV. Regarding such superior stability and broad band-gap range, SbIVX-2 monolayers are expected to be synthesized in experiments and taken as promising candidates for low-dimensional electronic and optoelectronic devices, such as blue-to-ultraviolet light-emitting diodes (LED) and photodetectors.

Doping Asymmetry Problem in ZnO: Current Status and Outlook. A Review of Experimental and Theoretical Efforts Focused on Achieving P-Type ZnO Suitable for Light-Emitting Optoelectronic Devices for the Blue/Ultraviolet Spectral Range

DTIC Science & Technology

2009-04-24

it seems at a first glance, because the isovalent co- doping of ZnO will result also in an increase of the band gap which usually gives rise to an...J.G. Lu, H.P. He, L.X. Chen, X.Q. Gu, J.Y. Huang, L.P. Zhu, and B.H. Zhao, “Na doping concentration tuned conductivity of ZnO films via pulsed laser...recently as a promising material for a variety of applications. To a large extent, the renewed interest in ZnO is fuelled by its wide direct band gap (3.3

Beyond the Borders of a Galaxy

NASA Technical Reports Server (NTRS)

2008-01-01

[figure removed for brevity, see original site] Side-by-Side Comparison Click on image for larger view

The outlying regions around the Southern Pinwheel galaxy, or M83, are highlighted in this composite image from NASA's Galaxy Evolution Explorer and the National Science Foundation's Very Large Array in New Mexico. The blue and pink pinwheel in the center is the galaxy's main stellar disk, while the flapping, ribbon-like structures are its extended arms.

The Galaxy Evolution Explorer is an ultraviolet survey telescope. Its observations, shown here in blue and green, highlight the galaxy's farthest-flung clusters of young stars up to 140,000 light-years from its center. The Very Large Array observations show the radio emission in red. They highlight gaseous hydrogen atoms, or raw ingredients for stars, which make up the lengthy, extended arms.

Astronomers are excited that the clusters of baby stars match up with the extended arms, because this helps them better understand how stars can be created out in the 'backwoods' of a galaxy.

In this image, far-ultraviolet light is blue, near-ultraviolet light is green and radio emission at a wavelength of 21 centimeters is red.

What Lies Beyond the Edge of a Galaxy The side-by-side comparison shows the Southern Pinwheel galaxy, or M83, as seen in ultraviolet light (right) and at both ultraviolet and radio wavelengths (left). While the radio data highlight the galaxy's long, octopus-like arms stretching far beyond its main spiral disk (red), the ultraviolet data reveal clusters of baby stars (blue) within the extended arms.

The ultraviolet image was taken by NASA's Galaxy Evolution Explorer between March 15 and May 20, 2007, at scheduled intervals. Back in 2005, the telescope first photographed M83 over a shorter period of time. That picture was the first to reveal far-flung baby stars forming up to 63,000 light-years from the edge of the main spiral disk. This came as a surprise to astronomers because a galaxy's outer territory typically lacks high densities of star-forming materials.

The newest picture of M83 from the Galaxy Evolution Explorer is shown at the right, and was taken over a longer period of time. In fact, it is one of the 'deepest,' or longest-exposure, images of a nearby galaxy in ultraviolet light. This deeper view shows more clusters of stars, as well as stars in the very remote reaches of the galaxy, up to 140,000 light-years away from its core.

The view at the left is a combination of the ultraviolet picture at the right and data taken by the telescopes of the National Science Foundation's Very Large Array in New Mexico. The radio data, colored here in red, reveal extended galactic arms of gaseous hydrogen atoms, which are raw ingredients for stars. Astronomers are excited that the remote clusters of baby stars match up with the extended arms, because this helps them better understand how stars can be created out in the boondocks of a galaxy.

M83 is located 15 million light-years away in the southern constellation Hydra.

In the Galaxy Evolution Explorer image on the right, near-ultraviolet light (or longer-wavelength ultraviolet light) is colored yellow and far-ultraviolet light is blue. In the combined image at the left, far-ultraviolet light is blue, near-ultraviolet light is green, and the radio emission at a wavelength of 21 centimeters is red.

Ultraviolet Spectral Behavior of TVCol During and After Flaring Activity

NASA Astrophysics Data System (ADS)

Sanad, M. R.; Abdel-Sabour, M. A.

2018-01-01

We studied the intermediate polar TVCol during and after its flare in November 1982 observed in the ultraviolet range with the International Ultraviolet Explorer. Two spectra revealing the variations of emission lines at different times are presented. We have estimated a new value of the reddening from the 2200 Å absorption feature, E ( B - V ) = 0.12 ± 0.02, and calculated the line fluxes of C IV and He II emission lines produced in the outer accretion disk. The average ultraviolet luminosity of emitting region during and after the flare is approximately 4 × 1032 erg s-1 and 9 × 1030 erg s-1, the corresponding average mass accretion rate is nearly 3 × 1015 erg s-1 (4.76 × 10-11 M ⊙ yr-1) and 5 × 1013 erg s-1 (7.93 × 10-13 M ⊙ yr-1), and the average temperature of the emitting region during and after flare is estimated to be of about 3.5 × 103 K and 2 × 103 K. We attribute this flare to a sudden increase in the mass accretion rate leading to the outburst activity.

Solar or UVA-Visible Photocatalytic Ozonation of Water Contaminants.

PubMed

Beltrán, Fernando J; Rey, Ana

2017-07-14

An incipient advanced oxidation process, solar photocatalytic ozonation (SPO), is reviewed in this paper with the aim of clarifying the importance of this process as a more sustainable water technology to remove priority or emerging contaminants from water. The synergism between ozonation and photocatalytic oxidation is well known to increase the oxidation rate of water contaminants, but this has mainly been studied in photocatalytic ozonation systems with lamps of different radiation wavelength, especially of ultraviolet nature (UVC, UVB, UVA). Nowadays, process sustainability is critical in environmental technologies including water treatment and reuse; the application of SPO systems falls into this category, and contributes to saving energy and water. In this review, we summarized works published on photocatalytic ozonation where the radiation source is the Sun or simulated solar light, specifically, lamps emitting radiation to cover the UVA and visible light spectra. The main aspects of the review include photoreactors used and radiation sources applied, synthesis and characterization of catalysts applied, influence of main process variables (ozone, catalyst, and pollutant concentrations, light intensity), type of water, biodegradability and ecotoxicity, mechanism and kinetics, and finally catalyst activity and stability.

Layered Crystal Structure, Color-Tunable Photoluminescence, and Excellent Thermal Stability of MgIn2P4O14 Phosphate-Based Phosphors.

PubMed

Zhang, Jing; Cai, Ge-Mei; Yang, Lv-Wei; Ma, Zhi-Yuan; Jin, Zhan-Peng

2017-11-06

Single-component white phosphors stand a good chance to serve in the next-generation high-power white light-emitting diodes. Because of low thermal stability and containing lanthanide ions with reduced valence state, most of reported phosphors usually suffer unstable color of lighting for practical packaging and comparably complex synthetic processes. In this work, we present a type of novel color-tunable blue-white-yellow-emitting MgIn 2 P 4 O 14 :Tm 3+ /Dy 3+ phosphor with high thermal stability, which can be easily fabricated in air. Under UV excitation, the MgIn 2 P 4 O 14 :Tm 0.02 Dy 0.03 white phosphor exhibits negligible thermal-quenching behavior, with a 99.5% intensity retention at 150 °C, relative to its initial value at room temperature. The phosphor host MgIn 2 P 4 O 14 was synthesized and reported for the first time. MgIn 2 P 4 O 14 crystallizes in the space group of C2/c (No. 15) with a novel layered structure built of alternate anionic and cationic layers. Its disordering structure, with Mg and In atoms co-occupying the same site, is believed to facilitate the energy transfer between rare-earth ions and benefit by sustaining the luminescence with increasing temperature. The measured absolute quantum yields of MgIn 2 P 4 O 14 :Dy 0.04 , MgIn 2 P 4 O 14 :Tm 0.01 Dy 0.04 , and MgIn 2 P 4 O 14 :Tm 0.02 Dy 0.03 phosphors under the excitation of 351 nm ultraviolet radiation are 70.50%, 53.24%, and 52.31%, respectively. Present work indicates that the novel layered MgIn 2 P 4 O 14 is a promising candidate as a single-component white phosphor host with an excellent thermal stability for near-UV-excited white-light-emitting diodes (wLEDs).

Room temperature electroluminescence from n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction device grown by PLD

NASA Astrophysics Data System (ADS)

Zhang, Lichun; Li, Qingshan; Wang, Feifei; Qu, Chong; Zhao, Fengzhou

2014-05-01

The n-ZnO:Ga/ p-GaN:Mg and n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction light emitting diodes (LEDs) were fabricated by the pulsed laser deposition (PLD) technique. The blue electroluminescence (EL) of the n-ZnO:Ga/ p-GaN:Mg heterojunction LEDs is emitted mainly from the p-GaN layer instead of the n-ZnO:Ga layer, for the reason that the electron injection from n-ZnO:Ga prevailed over the hole injection from p-GaN:Mg due to the higher carrier concentration and carrier mobility in n-ZnO:Ga. On the other hand, the n-ZnO:Ga/ i-ZnO/ p-GaN:Mg heterojunction LEDs exhibited dominant ultraviolet-blue emission. The reason for this difference is attributed to the inserted undoped i-ZnO layer between n-ZnO:Ga and p-GaN:Mg, in which the holes from p-GaN:Mg and the electrons from n-ZnO:Ga are recombined.

Light emitting device having peripheral emissive region

DOEpatents

Forrest, Stephen R

2013-05-28

Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

Mercury Flow Through the Mercury-Containing Lamp Sector of the Economy of the United States

USGS Publications Warehouse

Goonan, Thomas G.

2006-01-01

Introduction: This Scientific Investigations Report examines the flow of mercury through the mercury-containing lamp sector of the U.S. economy in 2001 from lamp manufacture through disposal or recycling. Mercury-containing lamps illuminate commercial and industrial buildings, outdoor areas, and residences. Mercury is an essential component in fluorescent lamps and high-intensity discharge lamps (high-pressure sodium, mercury-vapor, and metal halide). A typical fluorescent lamp is composed of a phosphor-coated glass tube with electrodes located at either end. Only a very small amount of the mercury is in vapor form. The remainder of the mercury is in the form of either liquid mercury metal or solid mercury oxide (mercury oxidizes over the life of the lamp). When voltage is applied, the electrodes energize the mercury vapor and cause it to emit ultraviolet energy. The phosphor coating absorbs the ultraviolet energy, which causes the phosphor to fluoresce and emit visible light. Mercury-containing lamps provide more lumens per watt than incandescent lamps and, as a result, require from three to four times less energy to operate. Mercury is persistent and toxic within the environment. Mercury-containing lamps are of environmental concern because they are widely distributed throughout the environment and are easily broken in handling. The magnitude of lamp sector mercury emissions, estimated to be 2.9 metric tons per year (t/yr), is small compared with the estimated mercury losses of the U.S. coal-burning and chlor-alkali industries, which are about 70 t/yr and about 90 t/yr, respectively.

Ultraviolet light absorbers having two different chromophors in the same molecule

DOEpatents

Vogl, O.; Li, S.

1983-10-06

This invention relates to novel ultraviolet light absorbers having two chromophors in the same molecule, and more particularly to benzotriazole substituted dihydroxybenzophenones and acetophenones. More particularly, this invention relates to 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxybenzophenone and 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxyacetophenone which are particularly useful as an ultraviolet light absorbers.

Fiber optic biofluorometer for physiological research on muscle slices

NASA Astrophysics Data System (ADS)

Belz, Mathias; Dendorfer, Andreas; Werner, Jan; Lambertz, Daniel; Klein, Karl-Friedrich

2016-03-01

A focus of research in cell physiology is the detection of Ca2+, NADH, FAD, ATPase activity or membrane potential, only to name a few, in muscle tissues. In this work, we report on a biofluorometer using ultraviolet light emitting diodes (UV-LEDs), optical fibers and two photomultipliers (PMTs) using synchronized fluorescence detection with integrated background correction to detect free calcium, Ca2+, in cardiac muscle tissue placed in a horizontal tissue bath and a microscope setup. Fiber optic probes with imaging optics have been designed to transport excitation light from the biofluorometer's light output to a horizontal tissue bath and to collect emission light from a tissue sample of interest to two PMTs allowing either single excitation / single emission or ratiometric, dual excitation / single emission or single excitation / dual emission fluorescence detection of indicator dyes or natural fluorophores. The efficient transport of light from the excitation LEDs to the tissue sample, bleaching effects of the excitation light in both, polymer and fused silica-based fibers will be discussed. Furthermore, a new approach to maximize light collection of the emission light using high NA fibers and high NA coupling optics will be shown. Finally, first results on Ca2+ measurements in cardiac muscle slices in a traditional microscope setup and a horizontal tissue bath using fiber optic probes will be introduced and discussed.

Effects of exposure to ultraviolet light on the development of Rana pipiens, the northern leopard frog

DOE Office of Scientific and Technical Information (OSTI.GOV)

Williams, J.J.; Wofford, H.W.

1996-10-01

The increase in ultraviolet light intensity levels due to ozone depletion recently has been linked to the decline in amphibian population. In this experiment, eggs and larvae of Rana pipiens were subjected to differing amounts of ultraviolet radiation to determine the effects of ultraviolet light on the development of amphibian tadpoles. The total length, length of body without tail, and maximum width of each specimen was recorded for a month of the tadpoles` development, including several measurements after the ultraviolet exposures were concluded. It was found that ultraviolet exposure significantly reduced the size of the organisms in comparison with themore » control group in all three measured areas. Ultraviolet radiation altered the health and appearance of the exposed organisms and was lethal at large amounts. This experiment showed that ultraviolet radiation could cause many problems in developing amphibians. By slowing their development and physically weakening predation, thus contributing to a decline in overall population levels.« less

A compact multi-channel fluorescence sensor with ambient light suppression

NASA Astrophysics Data System (ADS)

Egly, Dominik; Geörg, Daniel; Rädle, Matthias; Beuermann, Thomas

2012-03-01

A multi-channel fluorescence sensor has been developed for process monitoring and fluorescence diagnostics. It comprises a fiber-optic set-up with an immersion probe and an intensity-modulated high power ultraviolet light-emitting diode as a light source for fluorescence excitation. By applying an electronic lock-in procedure, fluorescence signals are selectively detectable at ambient light levels of 1000 000 times higher intensity. The sensor was designed to be compact, low cost and easily adaptable to a wide field of application. The set-up was used to simultaneously monitor three important metabolic fluorophores: NAD(P)H, flavins and porphyrins during the cultivation of a baker's yeast. Moreover, the accumulation and degradation kinetics of protoporphyrin IX induced by 5-aminolevulinic acid on the skin could be recorded by the sensor. The detection limit for protoporphyrin IX was determined to be 4 × 10-11 mol L-1. The linear signal amplification of the sensor and time courses of fluorescence signals monitored during yeast fermentations were validated using a commercial CCD spectrometer. The robust and flexible set-up of the fiber-optic measurement system promises easy implementation of this non-invasive analytical tool to fluorescence monitoring and diagnostics in R&D and production.

Biosynthetic porphyrins and the origin of photosynthesis

NASA Technical Reports Server (NTRS)

Mauzerall, D.; Ley, A.; Mercer-Smith, J. A.

1986-01-01

Since the prebiotic atmosphere was anaerobic, if not reducing, a useful function of primordial photosynthesis would have been to photooxidize reduced substrates such as Fe(+2), S(-2) or reduced organic molecules and to emit hydrogen. Experiments have shown that the early biogenic pigments uroporphyrin and coproporphyrin do photooxidize organic compounds and emit hydrogen in the presence of a platinum catalyst. These experiments were carried out in dilute aqueous solution near neutral pH under anaerobic atmosphere, and quantum yields near 10-2 were obtained. Thus relevant prebiotic conditions were maintained. Rather then to further optimize conditions, attempts were made to replace the platinum catalyst by a more prebiotically suitable catalyst. Trials with an Fe4S4(SR)4 cluster, in analogy to the present hydrogenase and nitrogenase, were not successful. However, experiments using cobalt complexes to catalyze the formation of hydrogen are promising. In analogy with biological photosynthetic systems which group pigments, electron transfer molecules and enzymes in clusters for efficiency, it was found that binding the biogenic porphyrins to the polyvinyl alcohol used to support the platinum catalyst did increase the quantum yield of the reaction. It was also found that ultraviolet light can serve to photo-oxidize porphyrinogens to porphyrins under anaerobic conditions. Thus the formation of the colorless porphyriogens by the extraordinarily simple biosynthetic pathway would not be a problem because of the prevalence of UV light in the prebiotic, anoxic atmosphere.

Preparation of SiO2 Passivation Thin Film for Improved the Organic Light-Emitting Device Life Time

NASA Astrophysics Data System (ADS)

Hong, Jeong Soo; Kim, Sang Mo; Kim, Kyung-Hwan

2011-08-01

To improve the organic light-emitting diode (OLED) lifetime, we prepared a SiO2 thin film for OLED passivation using a facing target sputtering (FTS) system as a function of oxygen gas flow rate and working pressure. The properties of the SiO2 thin film were examined by Fourier transform infrared (FT-IR), photoluminescence (PL) intensity measurement, field emission scanning electron microscopy (FE-SEM), and ultraviolet-visible (UV-vis) spectrometry that As a result, we found that a SiO2 thin film is formed at a 2 sccm oxygen gas flow rate and results the minimum damage to the organic layer is observed at a 1 mTorr working pressure. Also, from the water vapor transmission rate (WVTR), we observed that all of the as-deposited SiO2 thin films showed the ability of blocking moisture. After the properties were evaluated, an optimized SiO2 thin film was applied to OLED passivation. As a result, the property of the OLED fabricated by SiO2 passivation is similar to the OLED fabricated by glass passivation. However, the performance of OLED was degraded by enhancing of SiO2 passivation. This is the organic layer of the device is exposed to plasma for a prolonged period. Therefore, a method of minimizing damage to the organic layer and optimum conditions for what are important.

1.319 μm excited intense 800 nm frequency upconversion emission in Tm{sup 3+}-doped fluorogermanate glass

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gouveia-Neto, A. S.; Vermelho, M. V. D.; Gouveia, E. A.

2015-11-23

Generation of near-infrared light within the first biological optical window via frequency upconversion in Tm{sup 3+}-doped PbGeO{sub 3}-PbF{sub 2}-CdF{sub 2} glass excited within the second biological window at 1.319 μm is reported. The upconversion emission at 800 nm is the sole light signal observed in the entire ultraviolet-visible-near-infrared spectral region making it possible obtaining high contrast imaging. The dependence of the 800 nm signal upon the sample temperature was investigated and results showed an increase by a factor of ×2.5 in the 30–280 °C range. Generation of detectable 690 nm for temperatures above 100 °C in addition to the intense 800 nm main signal was also observed.more » The proposed excitation mechanism for the 800 nm thulium emitting level is assigned to a multiphonon-assisted excitation from the ground-state {sup 3}H{sub 6} to the {sup 3}H{sub 5} excited-state level, a rapid relaxation to the {sup 3}F{sub 4} level and followed by an excited-state absorption of the pump photons mediated by multiphonons connecting the {sup 3}F{sub 4} level to the {sup 3}H{sub 4} emitting level.« less

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field.

PubMed

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-19

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

Effective suppression of efficiency droop in GaN-based light-emitting diodes: role of significant reduction of carrier density and built-in field

NASA Astrophysics Data System (ADS)

Yoo, Yang-Seok; Na, Jong-Ho; Son, Sung Jin; Cho, Yong-Hoon

2016-10-01

A critical issue in GaN-based high power light-emitting diodes (LEDs) is how to suppress the efficiency droop problem occurred at high current injection while improving overall quantum efficiency, especially in conventional c-plane InGaN/GaN quantum well (QW), without using complicated bandgap engineering or unconventional materials and structures. Although increasing thickness of each QW may decrease carrier density in QWs, formation of additional strain and defects as well as increased built-in field effect due to enlarged QW thickness are unavoidable. Here, we propose a facile and effective method for not only reducing efficiency droop but also improving quantum efficiency by utilizing c-plane InGaN/GaN QWs having thinner barriers and increased QW number while keeping the same single well thickness and total active layer thickness. As the barrier thickness decreases and the QW number increases, both internal electric field and carrier density within QWs are simultaneously reduced without degradation of material quality. Furthermore, we found overall improved efficiency and reduced efficiency droop, which was attributed to the decrease of the built-in field and to less influence by non-radiative recombination processes at high carrier density. This simple and effective approach can be extended further for high power ultraviolet, green, and red LEDs.

Quantum-Dot Light-Emitting Diodes with Nitrogen-Doped Carbon Nanodot Hole Transport and Electronic Energy Transfer Layer.

PubMed

Park, Young Ran; Jeong, Hu Young; Seo, Young Soo; Choi, Won Kook; Hong, Young Joon

2017-04-12

Electroluminescence efficiency is crucial for the application of quantum-dot light-emitting diodes (QD-LEDs) in practical devices. We demonstrate that nitrogen-doped carbon nanodot (N-CD) interlayer improves electrical and luminescent properties of QD-LEDs. The N-CDs were prepared by solution-based bottom up synthesis and were inserted as a hole transport layer (HTL) between other multilayer HTL heterojunction and the red-QD layer. The QD-LEDs with N-CD interlayer represented superior electrical rectification and electroluminescent efficiency than those without the N-CD interlayer. The insertion of N-CD layer was found to provoke the Förster resonance energy transfer (FRET) from N-CD to QD layer, as confirmed by time-integrated and -resolved photoluminescence spectroscopy. Moreover, hole-only devices (HODs) with N-CD interlayer presented high hole transport capability, and ultraviolet photoelectron spectroscopy also revealed that the N-CD interlayer reduced the highest hole barrier height. Thus, more balanced carrier injection with sufficient hole carrier transport feasibly lead to the superior electrical and electroluminescent properties of the QD-LEDs with N-CD interlayer. We further studied effect of N-CD interlayer thickness on electrical and luminescent performances for high-brightness QD-LEDs. The ability of the N-CD interlayer to improve both the electrical and luminescent characteristics of the QD-LEDs would be readily exploited as an emerging photoactive material for high-efficiency optoelectronic devices.

Vacuum-ultraviolet lasers and spectroscopy

NASA Astrophysics Data System (ADS)

Hollenstein, U.

2012-01-01

Single-photon ionisation of most atoms and molecules requires short-wavelength radiation, typically in the vacuum-ultraviolet (VUV, λ < 200 nm) or extreme ultraviolet (XUV, λ < 105 nm) region of the electromagnetic spectrum. The first VUV and XUV radiation sources used to study molecular photoabsorption and photoionisation spectra were light sources emitting a broad continuous spectrum, such as high pressure lamps or synchrotrons. Monochromatic VUV and XUV radiation was obtained using diffraction gratings in evacuated monochromators, which resulted in a resolving power ν/Δv of at best 106 (i. e. 0.1 cm-1 at 100 000 cm-1), but more typically in the range 104-105 . The invention of the laser and the development of nonlinear optical frequency-upconversion techniques enabled the development of table-top narrow-bandwidth, coherent VUV and XUV laser sources with which VUV photoabsorption, photoionisation and photoelectron spectra of molecules can be recorded at much higher resolution, the best sources having bandwidths better than 50 MHz. Such laser sources are ideally suited to study the structure and dynamics of electronically excited states of atoms and molecules and molecular photoionisation using photoabsorption, photoionisation and photoelectron spectroscopy. This chapter presents the general principles that are exploited to generate tunable narrow-band laser radiation below 200 nm and describes spectroscopic methods such as photoabsorption spectroscopy, photoionisation spectroscopy and threshold photoelectron spectroscopy that relay on the broad tunability and narrow-bandwidth of VUV radiation sources.

Nanotherapy of cancer by photoelectrons emitted from the surface of nanoparticles exposed to nonionizing ultraviolet radiation.

PubMed

Letfullin, Renat R; George, Thomas F

2017-05-01

We introduce a new method for selectively destroying cancer cell organelles by electrons emitted from the surface of intracellularly localized nanoparticles exposed to the nonionizing ultraviolet (UV) radiation. We propose to target cancerous intracellular organelles by nanoparticles and expose them to UV radiation with energy density safe for healthy tissue. We simulate the number of photoelectrons produced by the nanoparticles made of various metals and radii, calculate their kinetic energy and compare it to the threshold energy for producing biological damage. Exposure of metal nanoparticles to UV radiation generates photoelectrons with kinetic energies up to 11 eV, which is high enough to produce single- to double-strand breaks in the DNA and damage the cancerous cell organelles.

Phosphor suspended in silicone, molded/formed and used in a remote phosphor configuration

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kolodin, Boris; Deshpande, Anirudha R

A light emitting package comprising a support hosting at least one light emitting diode. A light transmissive dome comprised of a silicone including a phosphor material positioned to receive light emitted by the diode. A glass cap overlies said dome.

Super sensitive UV detector using polymer functionalized nanobelts

DOEpatents

Wang, Zhong L; Lao, Changshi; Zhou, Jun

2012-10-23

An ultraviolet light sensor includes an elongated metal oxide nanostructure, a layer of an ultraviolet light-absorbing polymer, a current source and a current detector. The elongated metal oxide nanostructure has a first end and an opposite second end. The layer of an ultraviolet light-absorbing polymer is disposed about at least a portion of the metal oxide nanostructure. The current source is configured to provide electrons to the first end of the metal oxide nanostructure. The current detector is configured to detect an amount of current flowing through the metal oxide nanostructure. The amount of current flowing through the metal oxide nanostructure corresponds to an amount of ultraviolet light impinging on the metal oxide nanostructure.

Near-infrared light-activated red-emitting upconverting nanoplatform for T1-weighted magnetic resonance imaging and photodynamic therapy.

PubMed

Tang, Xiang-Long; Wu, Jun; Lin, Ben-Lan; Cui, Sheng; Liu, Hong-Mei; Yu, Ru-Tong; Shen, Xiao-Dong; Wang, Ting-Wei; Xia, Wei

2018-05-12

Photodynamic therapy (PDT) has increasingly become an efficient and attractive cancer treatment modality based on reactive oxygen species (ROS) that can induce tumor death after irradiation with ultraviolet or visible light. Herein, to overcome the limited tissue penetration in traditional PDT, a novel near-infrared (NIR) light-activated NaScF 4 : 40% Yb, 2% Er@CaF 2 upconversion nanoparticle (rUCNP) is successfully designed and synthesized. Chlorin e6, a photosensitizer and a chelating agent for Mn 2+ , is loaded into human serum albumin (HSA) that further conjugates onto rUCNPs. To increase the ability to target glioma tumor, an acyclic Arg-Gly-Asp peptide (cRGDyK) is linked to rUCNPs@HSA(Ce6-Mn). This nanoplatform enables efficient adsorption and conversion of NIR light (980 nm) into bright red emission (660 nm), which can trigger the photosensitizer Ce6-Mn complex for PDT and T 1 -weighted magnetic resonance imaging (T 1 -weighted MRI) for glioma diagnosis. Our in vitro and in vivo experiments demonstrate that NIR light-activated and glioma tumor-targeted PDT can generate large amounts of intracellular ROS that induce U87 cell apoptosis and suppress glioma tumor growth owing to the deep tissue penetration of irradiated light and excellent tumor-targeting ability. Thus, this nanoplatform holds potential for applications in T 1 -weighted MRI diagnosis and PDT of glioma for antitumor therapy. A near-infrared (NIR) light-activated nanoplatform for photodynamic therapy (PDT) was designed and synthesized. The Red-to-Green (R/G) ratio of NaScF 4 : 40% Yb, 2% Er almost reached 9, a value that was much higher than that of a traditional Yb/Er-codoped upconversion nanoparticle (rUCNP). By depositing a CaF 2 shell, the red-emission intensities of the rUCNPs were seven times strong as that of NaScF 4 : 40% Yb, 2% Er. The enhanced red-emitting rUCNPs could be applied in many fields such as bioimaging, controlled release, and real-time diagnosis. The nanoplatform had a strong active glioma-targeting ability, and all results achieved on subcutaneous glioma demonstrated that our NIR light-activated red-emitting upconverting nanoplatform was efficient for PDT. By loading Ce6-Mn complex into rUCNPs@HSA-RGD, the nanoplatform could be used as a T 1 -weighted magnetic resonance imaging agent for tumor diagnosis. Copyright © 2018 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

DOEpatents

LeToquin, Ronan P; Tong, Tao; Glass, Robert C

2014-12-30

Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen; Shi, Hongying; Liu, Bin; Wang, Lianhui; Huang, Wei

2015-02-01

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn

Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the usemore » of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.« less

A Stellar Ripple

NASA Technical Reports Server (NTRS)

2006-01-01

This false-color composite image shows the Cartwheel galaxy as seen by the Galaxy Evolution Explorer's far ultraviolet detector (blue); the Hubble Space Telescope's wide field and planetary camera 2 in B-band visible light (green); the Spitzer Space Telescope's infrared array camera at 8 microns (red); and the Chandra X-ray Observatory's advanced CCD imaging spectrometer-S array instrument (purple).

Approximately 100 million years ago, a smaller galaxy plunged through the heart of Cartwheel galaxy, creating ripples of brief star formation. In this image, the first ripple appears as an ultraviolet-bright blue outer ring. The blue outer ring is so powerful in the Galaxy Evolution Explorer observations that it indicates the Cartwheel is one of the most powerful UV-emitting galaxies in the nearby universe. The blue color reveals to astronomers that associations of stars 5 to 20 times as massive as our sun are forming in this region. The clumps of pink along the outer blue ring are regions where both X-rays and ultraviolet radiation are superimposed in the image. These X-ray point sources are very likely collections of binary star systems containing a blackhole (called massive X-ray binary systems). The X-ray sources seem to cluster around optical/ultraviolet-bright supermassive star clusters.

The yellow-orange inner ring and nucleus at the center of the galaxy result from the combination of visible and infrared light, which is stronger towards the center. This region of the galaxy represents the second ripple, or ring wave, created in the collision, but has much less star formation activity than the first (outer) ring wave. The wisps of red spread throughout the interior of the galaxy are organic molecules that have been illuminated by nearby low-level star formation. Meanwhile, the tints of green are less massive, older visible-light stars.

Although astronomers have not identified exactly which galaxy collided with the Cartwheel, two of three candidate galaxies can be seen in this image to the bottom left of the ring, one as a neon blob and the other as a green spiral.

Previously, scientists believed the ring marked the outermost edge of the galaxy, but the latest GALEX observations detect a faint disk, not visible in this image, that extends to twice the diameter of the ring.

Constraining the size of the dusty torus in Active Galactic Nuclei: An Optical/Infrared Reverberation Lag Study

NASA Astrophysics Data System (ADS)

Vazquez, Billy

The dusty torus is the key component in the Active Galactic Nuclei (AGN) Unification Scheme that explains the spectroscopic differences between Seyfert galaxies of types 1 and 2. The torus dust is heated by the nuclear source and emits the absorbed energy in the infrared (IR); but because of light travel times, the torus IR emission responds to variations of the nuclear ultraviolet/optical continuum with a delay that corresponds to the size of the emitting region. The results from a mid-infrared (MIR) monitoring campaign using the Spitzer Space Telescope and optical ground-based telescopes (B and V band imaging), which spanned over 2 years and covered a sample of 12 Seyfert galaxies, are presented. The aim was to constrain the distances from the nucleus to the regions in the torus emitting at wavelengths of 3.6 microm and 4.5 microm. MIR light curves showing the variability characteristics of these AGN are presented and the effects of photometric uncertainties on the time-series analysis of the light curves are discussed. Significant variability was observed in the IR light curves of 10 of 12 objects, with relative amplitudes ranging from ˜10% to ˜100% from their mean flux. The "reverberation lags" between the 3.6 microm and 4.5 microm IR bands were determined for the entire sample and between the optical and MIR bands for NGC6418. In NGC6418, the 3.6 microm and 4.5 microm fluxes lagged behind those of the optical continuum by 47.5+2.0-1.9) days and 62.5+2.5-2.9 days, respectively. This is consistent with the inferred lower limit to the sublimation radius for pure graphite grains at T=1800 K but smaller by a factor of 2 than the lower limit for dust grains with a "standard" interstellar medium (ISM) composition. There is evidence that the lags increased following approximately by a factor of 2 increase in luminosity, consistent with an increase in the sublimation radius.

Upconverting and NIR emitting rare earth based nanostructures for NIR-bioimaging

NASA Astrophysics Data System (ADS)

Hemmer, Eva; Venkatachalam, Nallusamy; Hyodo, Hiroshi; Hattori, Akito; Ebina, Yoshie; Kishimoto, Hidehiro; Soga, Kohei

2013-11-01

In recent years, significant progress was achieved in the field of nanomedicine and bioimaging, but the development of new biomarkers for reliable detection of diseases at an early stage, molecular imaging, targeting and therapy remains crucial. The disadvantages of commonly used organic dyes include photobleaching, autofluorescence, phototoxicity and scattering when UV (ultraviolet) or visible light is used for excitation. The limited penetration depth of the excitation light and the visible emission into and from the biological tissue is a further drawback with regard to in vivo bioimaging. Lanthanide containing inorganic nanostructures emitting in the near-infrared (NIR) range under NIR excitation may overcome those problems. Due to the outstanding optical and magnetic properties of lanthanide ions (Ln3+), nanoscopic host materials doped with Ln3+, e.g. Y2O3:Er3+,Yb3+, are promising candidates for NIR-NIR bioimaging. Ln3+-doped gadolinium-based inorganic nanostructures, such as Gd2O3:Er3+,Yb3+, have a high potential as opto-magnetic markers allowing the combination of time-resolved optical imaging and magnetic resonance imaging (MRI) of high spatial resolution. Recent progress in our research on over-1000 nm NIR fluorescent nanoprobes for in vivo NIR-NIR bioimaging will be discussed in this review.In recent years, significant progress was achieved in the field of nanomedicine and bioimaging, but the development of new biomarkers for reliable detection of diseases at an early stage, molecular imaging, targeting and therapy remains crucial. The disadvantages of commonly used organic dyes include photobleaching, autofluorescence, phototoxicity and scattering when UV (ultraviolet) or visible light is used for excitation. The limited penetration depth of the excitation light and the visible emission into and from the biological tissue is a further drawback with regard to in vivo bioimaging. Lanthanide containing inorganic nanostructures emitting in the near-infrared (NIR) range under NIR excitation may overcome those problems. Due to the outstanding optical and magnetic properties of lanthanide ions (Ln3+), nanoscopic host materials doped with Ln3+, e.g. Y2O3:Er3+,Yb3+, are promising candidates for NIR-NIR bioimaging. Ln3+-doped gadolinium-based inorganic nanostructures, such as Gd2O3:Er3+,Yb3+, have a high potential as opto-magnetic markers allowing the combination of time-resolved optical imaging and magnetic resonance imaging (MRI) of high spatial resolution. Recent progress in our research on over-1000 nm NIR fluorescent nanoprobes for in vivo NIR-NIR bioimaging will be discussed in this review. Electronic supplementary information (ESI) available: Table 1: sample overview. Movie 1: time-resolved in vivo biodistribution of Gd2O3:Er3+,Yb3+ nanorods in a mouse 5 min post-injection. Fig. 1: preliminary long-term cytotoxicity study of Y2O3:Er3+ injected into mice. See DOI: 10.1039/c3nr02286b