Sample records for ultraviolet light emitting

  1. High extraction efficiency ultraviolet light-emitting diode

    DOEpatents

    Wierer, Jonathan; Montano, Ines; Allerman, Andrew A.

    2015-11-24

    Ultraviolet light-emitting diodes with tailored AlGaN quantum wells can achieve high extraction efficiency. For efficient bottom light extraction, parallel polarized light is preferred, because it propagates predominately perpendicular to the QW plane and into the typical and more efficient light escape cones. This is favored over perpendicular polarized light that propagates along the QW plane which requires multiple, lossy bounces before extraction. The thickness and carrier density of AlGaN QW layers have a strong influence on the valence subband structure, and the resulting optical polarization and light extraction of ultraviolet light-emitting diodes. At Al>0.3, thinner QW layers (<2.5 nm are preferred) result in light preferentially polarized parallel to the QW plane. Also, active regions consisting of six or more QWs, to reduce carrier density, and with thin barriers, to efficiently inject carriers in all the QWs, are preferred.

  2. Design Considerations for a Water Treatment System Utilizing Ultra-Violet Light Emitting Diodes

    DTIC Science & Technology

    2014-03-27

    DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...the United States. ii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING DIODES...DISTRIBUTION UNLIMITED. iii AFIT-ENV-14-M-58 DESIGN CONSIDERATIONS FOR A WATER TREATMENT SYSTEM UTILIZING ULTRA-VIOLET LIGHT EMITTING

  3. Deep ultraviolet light-emitting and laser diodes

    NASA Astrophysics Data System (ADS)

    Khan, Asif; Asif, Fatima; Muhtadi, Sakib

    2016-02-01

    Nearly all the air-water purification/polymer curing systems and bio-medical instruments require 250-300 nm wavelength ultraviolet light for which mercury lamps are primarily used. As a potential replacement for these hazardous mercury lamps, several global research teams are developing AlGaN based Deep Ultraviolet (DUV) light emitting diodes (LEDs) and DUV LED Lamps and Laser Diodes over Sapphire and AlN substrates. In this paper, we review the current research focus and the latest device results. In addition to the current results we also discuss a new quasipseudomorphic device design approach. This approach which is much easier to integrate in a commercial production setting was successfully used to demonstrate UVC devices on Sapphire substrates with performance levels equal to or better than the conventional relaxed device designs.

  4. Ultraviolet light-emitting diodes in water disinfection.

    PubMed

    Vilhunen, Sari; Särkkä, Heikki; Sillanpää, Mika

    2009-06-01

    The novel system of ultraviolet light-emitting diodes (UV LEDs) was studied in water disinfection. Conventional UV lamps, like mercury vapor lamp, consume much energy and are considered to be problem waste after use. UV LEDs are energy efficient and free of toxicants. This study showed the suitability of LEDs in disinfection and provided information of the effect of two emitted wavelengths and different test mediums to Escherichia coli destruction. Common laboratory strain of E. coli (K12) was used and the effects of two emitted wavelengths (269 and 276 nm) were investigated with two photolytic batch reactors both including ten LEDs. The effects of test medium were examined with ultrapure water, nutrient and water, and nutrient and water with humic acids. Efficiency of reactors was almost the same even though the one emitting higher wavelength had doubled optical power compared to the other. Therefore, the effect of wavelength was evident and the radiation emitted at 269 nm was more powerful. Also, the impact of background was studied and noticed to have only slight deteriorating effect. In the 5-min experiment, the bacterial reduction of three to four log colony-forming units (CFU) per cubic centimeter was achieved, in all cases. When turbidity of the test medium was greater, part of the UV radiation was spent on the absorption and reactions with extra substances on liquid. Humic acids can also coat the bacteria reducing the sensitivity of the cells to UV light. The lower wavelength was distinctly more efficient when the optical power is considered, even though the difference of wavelengths was small. The reason presumably is the greater absorption of DNA causing more efficient bacterial breakage. UV LEDs were efficient in E. coli destruction, even if LEDs were considered to have rather low optical power. The effect of wavelengths was noticeable but the test medium did not have much impact. This study found UV LEDs to be an optimal method for bacterial

  5. Semi-transparent all-oxide ultraviolet light-emitting diodes based on ZnO/NiO-core/shell nanowires

    NASA Astrophysics Data System (ADS)

    Shi, Zhi-Feng; Xu, Ting-Ting; Wu, Di; Zhang, Yuan-Tao; Zhang, Bao-Lin; Tian, Yong-Tao; Li, Xin-Jian; Du, Guo-Tong

    2016-05-01

    Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores.Semi-transparent all-oxide light-emitting diodes based on ZnO/NiO-core/shell nanowire structures were prepared on double-polished c-Al2O3 substrates. The entire heterojunction diode showed an average transparency of ~65% in the ultraviolet and visible regions. Under forward bias, the diode displayed an intense ultraviolet emission at ~382 nm, and its electroluminescence performance was remarkable in terms of a low emission onset, acceptable operating stability, and the ability to optically excite emissive semiconductor nanoparticle chromophores. Electronic supplementary information (ESI) available. See DOI: 10.1039/c5nr07236k

  6. Tunnel junction enhanced nanowire ultraviolet light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Sarwar, A. T. M. Golam; May, Brelon J.; Deitz, Julia I.

    Polarization engineered interband tunnel junctions (TJs) are integrated in nanowire ultraviolet (UV) light emitting diodes (LEDs). A ∼6 V reduction in turn-on voltage is achieved by the integration of tunnel junction at the base of polarization doped nanowire UV LEDs. Moreover, efficient hole injection into the nanowire LEDs leads to suppressed efficiency droop in TJ integrated nanowire LEDs. The combination of both reduced bias voltage and increased hole injection increases the wall plug efficiency in these devices. More than 100 μW of UV emission at ∼310 nm is measured with external quantum efficiency in the range of 4–6 m%. The realization of tunnel junctionmore » within the nanowire LEDs opens a pathway towards the monolithic integration of cascaded multi-junction nanowire LEDs on silicon.« less

  7. Inactivation of Pseudomonas aeruginosa biofilm after ultraviolet light-emitting diode treatment: a comparative study between ultraviolet C and ultraviolet B

    NASA Astrophysics Data System (ADS)

    Argyraki, Aikaterini; Markvart, Merete; Bjørndal, Lars; Bjarnsholt, Thomas; Petersen, Paul Michael

    2017-06-01

    The objective of this study was to test the inactivation efficiency of two different light-based treatments, namely ultraviolet B (UVB) and ultraviolet C (UVC) irradiation, on Pseudomonas aeruginosa biofilms at different growth stages (24, 48, and 72 h grown). In our experiments, a type of AlGaN light-emitting diodes (LEDs) was used to deliver UV irradiation on the biofilms. The effectiveness of the UVB at 296 nm and UVC at 266 nm irradiations was quantified by counting colony-forming units. The survival of less mature biofilms (24 h grown) was studied as a function of UV-radiant exposure. All treatments were performed on three different biological replicates to test reproducibility. It was shown that UVB irradiation was significantly more effective than UVC irradiation in inactivating P. aeruginosa biofilms. UVC irradiation induced insignificant inactivation on mature biofilms. The fact that the UVB at 296 nm exists in daylight and has such disinfection ability on biofilms provides perspectives for the treatment of infectious diseases.

  8. Enhanced light extraction efficiency of micro-ring array AlGaN deep ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Bekele Fayisa, Gabisa; Lee, Jong Won; Kim, Jungsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2017-09-01

    An effective approach to overcome inherently poor light extraction efficiency of AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) is presented. We demonstrated the 5 × 5 array micro-ring DUV LED having an inclined sidewall at the outer perimeter and a p-GaN-removed inner circle of the micro-ring, together with MgF2/Al omnidirectional reflectors. The micro-ring array DUV LED shows remarkably higher light output power by 70% than the reference, consistent with the calculated result, as well as comparable turn-on and operational voltages, which are attributed to the effective extraction of strong transverse-magnetic polarized anisotropic emission and the reduction of the absorption loss by the p-GaN contact layer, simultaneously.

  9. Development and future of ultraviolet light-emitting diodes: UV-LED will replace the UV lamp

    NASA Astrophysics Data System (ADS)

    Muramoto, Yoshihiko; Kimura, Masahiro; Nouda, Suguru

    2014-06-01

    Ultraviolet light-emitting diodes (UV-LEDs) have started replacing UV lamps. The power per LED of high-power LED products has reached 12 W (14 A), which is 100 times the values observed ten years ago. In addition, the cost of these high-power LEDs has been decreasing. In this study, we attempt to understand the technologies and potential of UV-LEDs.

  10. Ultraviolet electroluminescence from zinc oxide nanorods/deoxyribonucleic acid hybrid bio light-emitting diode

    NASA Astrophysics Data System (ADS)

    Gupta, Rohini Bhardwaj; Nagpal, Swati; Arora, Swati; Bhatnagar, Pramod Kumar; Mathur, Parmatma Chandra

    2011-01-01

    Ultraviolet (UV) light-emitting diode using salmon deoxyribonucleic acid (sDNA)-cetyltrimethylammonium complex as an electron blocking layer and zinc oxide (ZnO) nanorods as emissive material was fabricated. UV emission, which was blue shifted up to 335 nm with respect to the band edge emission of 390 nm, was observed. This blue shift was caused due to accumulation of electrons in the conduction band of ZnO because of a high potential barrier existing at the sDNA/ZnO interface.

  11. Defect-Enabled Electrical Current Leakage in Ultraviolet Light-Emitting Diodes

    DOE PAGES

    Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

    2015-04-13

    The AlGaN materials system offers a tunable, ultra-wide bandgap that is exceptionally useful for high-power electronics and deep ultraviolet optoelectronics. Moseley et al. (pp. 723–726) investigate a structural defect known as an open-core threading dislocation or ''nanopipe'' that is particularly detrimental to devices that employ these materials. Furthermore, an AlGaN thin film was synthesized using metal-organic chemical-vapor deposition. Electrical current leakage is detected at a discrete point using a conductive atomic-force microscope (CAFM). However, no physical feature or abnormality at this location was visible by an optical microscope. The AlGaN thin film was then etched in hot phosphoric acid, andmore » the same location that was previously analyzed was revisited with the CAFM. The point that previously exhibited electrical current leakage had been decorated with a 1.1 μm wide hexagonal pit, which identified the site of electrical current leakage as a nanopipe and allows these defects to be easily observed by optical microscopy. Moreover, with this nanopipe identification and quantification strategy, the authors were able to correlate decreasing ultraviolet light-emitting diode optical output power with increasing nanopipe density.« less

  12. Heavy Mg-doping of (Al,Ga)N films for potential applications in deep ultraviolet light-emitting structures

    NASA Astrophysics Data System (ADS)

    Liang, Y. H.; Towe, E.

    2018-03-01

    Doping of high aluminum-containing (Al,Ga)N thin films has remained a challenging problem that has hindered progress in the development of deep ultraviolet light-emitters. This paper reports on the synthesis and use of heavily doped (Al,Ga)N films in deep ultraviolet (˜274 nm) light-emitting structures; these structures were synthesized by molecular beam epitaxy under liquid-metal growth conditions that facilitate the incorporation of extremely high density of Mg dopant impurities (up to 5 × 1019 cm-3) into aluminum-rich (Al,Ga)N thin films. Prototypical light-emitting diode structures incorporating Al0.7Ga0.3N films doped with Mg impurities that ionize to give free hole carrier concentrations of up to 6 × 1017 cm-3 exhibit external quantum efficiencies of up 0.56%; this is an improvement from previous devices made from molecular beam epitaxy-grown materials. This improvement is believed to be due to the high hole carrier concentration enabled by the relatively low activation energy of 220 meV compared to the expected values of 408-507 meV for Al0.7Ga0.3N films.

  13. Exciplex formation and electroluminescent absorption in ultraviolet organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Qi; Zhang, Hao; Zhang, Xiao-Wen; Xu, Tao; Wei, Bin

    2015-02-01

    We investigated the formation of exciplex and electroluminescent absorption in ultraviolet organic light-emitting diodes (UV OLEDs) using different heterojunction structures. It is found that an energy barrier of over 0.3 eV between the emissive layer (EML) and adjacent transport layer facilitates exciplex formation. The electron blocking layer effectively confines electrons in the EML, which contributes to pure UV emission and enhances efficiency. The change in EML thickness generates tunable UV emission from 376 nm to 406 nm. In addition, the UV emission excites low-energy organic function layers and produces photoluminescent emission. In UV OLED, avoiding the exciplex formation and averting light absorption can effectively improve the purity and efficiency. A maximum external quantum efficiency of 1.2% with a UV emission peak of 376 nm is realized. Project supported by the National Natural Science Foundation of China (Grant Nos. 61136003 and 61275041) and the Guangxi Provincial Natural Science Foundation, China (Grant No. 2012GXNSFBA053168).

  14. Tunnel-injected sub-260 nm ultraviolet light emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; Bajaj, Sanyam; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Rajan, Siddharth

    2017-05-01

    We report on tunnel-injected deep ultraviolet light emitting diodes (UV LEDs) configured with a polarization engineered Al0.75Ga0.25 N/In0.2Ga0.8 N tunnel junction structure. Tunnel-injected UV LED structure enables n-type contacts for both bottom and top contact layers. However, achieving Ohmic contact to wide bandgap n-AlGaN layers is challenging and typically requires high temperature contact metal annealing. In this work, we adopted a compositionally graded top contact layer for non-alloyed metal contact and obtained a low contact resistance of ρc = 4.8 × 10-5 Ω cm2 on n-Al0.75Ga0.25 N. We also observed a significant reduction in the forward operation voltage from 30.9 V to 19.2 V at 1 kA/cm2 by increasing the Mg doping concentration from 6.2 × 1018 cm-3 to 1.5 × 1019 cm-3. Non-equilibrium hole injection into wide bandgap Al0.75Ga0.25 N with Eg>5.2 eV was confirmed by light emission at 257 nm. This work demonstrates the feasibility of tunneling hole injection into deep UV LEDs and provides a structural design towards high power deep-UV emitters.

  15. Low-threshold voltage ultraviolet light-emitting diodes based on (Al,Ga)N metal-insulator-semiconductor structures

    NASA Astrophysics Data System (ADS)

    Liang, Yu-Han; Towe, Elias

    2017-12-01

    Al-rich III-nitride-based deep-ultraviolet (UV) (275-320 nm) light-emitting diodes are plagued with a low emission efficiency and high turn-on voltages. We report Al-rich (Al,Ga)N metal-insulator-semiconductor UV light-emitting Schottky diodes with low turn-on voltages of <3 V, which are about half those of typical (Al,Ga)N p-i-n diodes. Our devices use a thin AlN film as the insulator and an n-type Al0.58Ga0.42N film as the semiconductor. To improve the efficiency, we inserted a GaN quantum-well structure between the AlN insulator and the n-type Al x Ga1- x N semiconductor. The benefits of the quantum-well structure include the potential to tune the emission wavelength and the capability to confine carriers for more efficient radiative recombination.

  16. High-power AlGaN-based near-ultraviolet light-emitting diodes grown on Si(111)

    NASA Astrophysics Data System (ADS)

    Li, Zengcheng; Liu, Legong; Huang, Yingnan; Sun, Qian; Feng, Meixin; Zhou, Yu; Zhao, Hanmin; Yang, Hui

    2017-07-01

    High-power AlGaN-based 385 nm near-ultraviolet light-emitting diodes (UVA-LEDs) grown on Si(111) substrates are reported. The threading dislocation (TD) density of AlGaN was reduced by employing an Al-composition step-graded AlN/AlGaN multilayer buffer. V-shaped pits were intentionally incorporated into the active region to screen the carriers from the nonradiative recombination centers (NRCs) around the TDs and to facilitate hole injection. The light extraction efficiency was enhanced by the surface roughening of a thin-film (TF) vertical chip structure. The as-fabricated TF-UVA-LED exhibited a light output power of 960 mW at 500 mA, corresponding to an external quantum efficiency of 59.7%.

  17. Surface hole gas enabled transparent deep ultraviolet light-emitting diode

    NASA Astrophysics Data System (ADS)

    Zhang, Jianping; Gao, Ying; Zhou, Ling; Gil, Young-Un; Kim, Kyoung-Min

    2018-07-01

    The inherent deep-level nature of acceptors in wide-band-gap semiconductors makes p-ohmic contact formation and hole supply difficult, impeding progress for short-wavelength optoelectronics and high-power high-temperature bipolar electronics. We provide a general solution by demonstrating an ultrathin rather than a bulk wide-band-gap semiconductor to be a successful hole supplier and ohmic contact layer. Free holes in this ultrathin semiconductor are assisted to activate from deep acceptors and swept to surface to form hole gases by a large electric field, which can be provided by engineered spontaneous and piezoelectric polarizations. Experimentally, a 6 nm thick AlN layer with surface hole gas had formed p-ohmic contact to metals and provided sufficient hole injection to a 280 nm light-emitting diode, demonstrating a record electrical-optical conversion efficiency exceeding 8.5% at 20 mA (55 A cm‑2). Our approach of forming p-type wide-band-gap semiconductor ohmic contact is critical to realizing high-efficiency ultraviolet optoelectronic devices.

  18. Edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide.

    PubMed

    Liang, H K; Yu, S F; Yang, H Y

    2010-02-15

    An edge-emitting ultraviolet n-ZnO:Al/i-ZnO/p-GaN heterojunction light-emitting diode with a rib waveguide is fabricated by filtered cathodic vacuum arc technique at low deposition temperature (approximately 150 degrees C). Electroluminescence with emission peak at 387 nm is observed. Good correlation between electro- and photo- luminescence spectra suggests that the i-ZnO layer of the heterojunction supports radiative excitonic recombination. Furthermore, it is found that the emission intensity can be enhanced by approximately 5 times due to the presence of the rib waveguide. Only fundamental TE and TM polarizations are supported inside the rib waveguide and the intensity of TE polarization is approximately 2.2 time larger than that of TM polarization.

  19. Al x Ga1‑ x N-based semipolar deep ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Akaike, Ryota; Ichikawa, Shuhei; Funato, Mitsuru; Kawakami, Yoichi

    2018-06-01

    Deep ultraviolet (UV) emission from Al x Ga1‑ x N-based light-emitting diodes (LEDs) fabricated on semipolar (1\\bar{1}02) (r-plane) AlN substrates is presented. The growth conditions are optimized. A high NH3 flow rate during metalorganic vapor phase epitaxy yields atomically flat Al y Ga1‑ y N (y > x) on which Al x Ga1‑ x N/Al y Ga1‑ y N multiple quantum wells with abrupt interfaces and good periodicity are fabricated. The fabricated r-Al x Ga1‑ x N-based LED emits at 270 nm, which is in the germicidal wavelength range. Additionally, the emission line width is narrow, and the peak wavelength is stable against the injection current, so the semipolar LED shows promise as a UV emitter.

  20. Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination.

    PubMed

    Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

    2016-09-23

    Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p < 0.001). Statistically significant differences (p < 0.001) were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs.

  1. Time Effectiveness of Ultraviolet C Light (UVC) Emitted by Light Emitting Diodes (LEDs) in Reducing Stethoscope Contamination

    PubMed Central

    Messina, Gabriele; Fattorini, Mattia; Nante, Nicola; Rosadini, Daniele; Serafini, Andrea; Tani, Marco; Cevenini, Gabriele

    2016-01-01

    Today it is well demonstrated that stethoscopes can be as contaminated as hands, which are a recognized source of Health-Care Associated Infections (HCAIs). Ultraviolet C (UVC) light has proven disinfection capacity and the innovative UVC technology of Light Emitting Diode (LED) shows several potential benefits. To verify whether the use of UVC LEDs is effective and reliable in stethoscope membrane disinfection after prolonged use, a pre-post intervention study was conducted. A total of 1668 five-minute cycles were performed on two UVC LEDs to simulate their use; thereafter, their disinfection capacity was tested on stethoscope membranes used on a previously auscultated volunteer. Then, a further 1249 cycles were run and finally the LEDs were tested to assess performance in reducing experimental contamination by Staphylococcus aureus, Pseudomonas aeruginosa and Escherichia coli on the stethoscope membrane. Baseline volunteer contamination identified 104 Colony Forming Units (CFUs) while treated Petri dishes had 12 and 15 CFUs (p < 0.001). Statistically significant differences (p < 0.001) were also found relating to the reduction of specific bacteria: in particular, after treatment no CFU were observed for S. aureus and E. coli. UVC LEDs demonstrated the capacity to maintain high levels of disinfection after more than 240 h of use and they were effective against common microorganisms that are causative agents of HCAIs. PMID:27669273

  2. MAHLI Calibration Target in Ultraviolet Light

    NASA Image and Video Library

    2012-02-07

    During pre-flight testing in March 2011, the Mars Hand Lens Imager MAHLI camera on NASA Mars rover Curiosity took this image of the MAHLI calibration target under illumination from MAHLI two ultraviolet LEDs light emitting diodes.

  3. 234 nm and 246 nm AlN-Delta-GaN quantum well deep ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

    2018-01-01

    Deep ultraviolet (DUV) AlN-delta-GaN quantum well (QW) light-emitting diodes (LEDs) with emission wavelengths of 234 nm and 246 nm are proposed and demonstrated in this work. Our results reveal that the use of AlN-delta-GaN QW with ˜1-3 monolayer GaN delta-layer can achieve a large transverse electric (TE)-polarized spontaneous emission rate instead of transverse magnetic-polarized emission, contrary to what is observed in conventional AlGaN QW in the 230-250 nm wavelength regime. The switching of light polarization in the proposed AlN-delta-GaN QW active region is attributed to the rearrangement of the valence subbands near the Γ-point. The light radiation patterns obtained from angle-dependent electroluminescence measurements for the Molecular Beam Epitaxy (MBE)-grown 234 nm and 246 nm AlN-delta-GaN QW LEDs show that the photons are mainly emitted towards the surface rather than the edge, consistent with the simulated patterns achieved by the finite-difference time-domain modeling. The results demonstrate that the proposed AlN-delta-GaN QWs would potentially lead to high-efficiency TE-polarized surface-emitting DUV LEDs.

  4. Aluminum nitride nanowire light emitting diodes: Breaking the fundamental bottleneck of deep ultraviolet light sources

    PubMed Central

    Zhao, S.; Connie, A. T.; Dastjerdi, M. H. T.; Kong, X. H.; Wang, Q.; Djavid, M.; Sadaf, S.; Liu, X. D.; Shih, I.; Guo, H.; Mi, Z.

    2015-01-01

    Despite broad interest in aluminum gallium nitride (AlGaN) optoelectronic devices for deep ultraviolet (DUV) applications, the performance of conventional Al(Ga)N planar devices drastically decays when approaching the AlN end, including low internal quantum efficiencies (IQEs) and high device operation voltages. Here we show that these challenges can be addressed by utilizing nitrogen (N) polar Al(Ga)N nanowires grown directly on Si substrate. By carefully tuning the synthesis conditions, a record IQE of 80% can be realized with N-polar AlN nanowires, which is nearly ten times higher compared to high quality planar AlN. The first 210 nm emitting AlN nanowire light emitting diodes (LEDs) were achieved, with a turn on voltage of about 6 V, which is significantly lower than the commonly observed 20 – 40 V. This can be ascribed to both efficient Mg doping by controlling the nanowire growth rate and N-polarity induced internal electrical field that favors hole injection. In the end, high performance N-polar AlGaN nanowire LEDs with emission wavelengths covering the UV-B/C bands were also demonstrated. PMID:25684335

  5. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes.

    PubMed

    Li, Luping; Zhang, Yonghui; Xu, Shu; Bi, Wengang; Zhang, Zi-Hui; Kuo, Hao-Chung

    2017-10-24

    The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs.

  6. On the Hole Injection for III-Nitride Based Deep Ultraviolet Light-Emitting Diodes

    PubMed Central

    Li, Luping; Zhang, Yonghui; Kuo, Hao-Chung

    2017-01-01

    The hole injection is one of the bottlenecks that strongly hinder the quantum efficiency and the optical power for deep ultraviolet light-emitting diodes (DUV LEDs) with the emission wavelength smaller than 360 nm. The hole injection efficiency for DUV LEDs is co-affected by the p-type ohmic contact, the p-type hole injection layer, the p-type electron blocking layer and the multiple quantum wells. In this report, we review a large diversity of advances that are currently adopted to increase the hole injection efficiency for DUV LEDs. Moreover, by disclosing the underlying device physics, the design strategies that we can follow have also been suggested to improve the hole injection for DUV LEDs. PMID:29073738

  7. Inorganic volumetric light source excited by ultraviolet light

    DOEpatents

    Reed, Scott; Walko, Robert J.; Ashley, Carol S.; Brinker, C. Jeffrey

    1994-01-01

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light.

  8. Inorganic volumetric light source excited by ultraviolet light

    DOEpatents

    Reed, S.; Walko, R.J.; Ashley, C.S.; Brinker, C.J.

    1994-04-26

    The invention relates to a composition for the volumetric generation of radiation. The composition comprises a porous substrate loaded with a component capable of emitting radiation upon interaction with an exciting radiation. Preferably, the composition is an aerogel substrate loaded with a component, e.g., a phosphor, capable of interacting with exciting radiation of a first energy, e.g., ultraviolet light, to produce radiation of a second energy, e.g., visible light. 4 figures.

  9. Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction

    PubMed Central

    2014-01-01

    We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO. PMID:25232299

  10. Ultraviolet/blue light-emitting diodes based on single horizontal ZnO microrod/GaN heterojunction.

    PubMed

    Du, Chia-Fong; Lee, Chen-Hui; Cheng, Chao-Tsung; Lin, Kai-Hsiang; Sheu, Jin-Kong; Hsu, Hsu-Cheng

    2014-01-01

    We report electroluminescence (EL) from single horizontal ZnO microrod (MR) and p-GaN heterojunction light-emitting diodes under forward and reverse bias. EL spectra were composed of two blue emissions centered at 431 and 490 nm under forward biases, but were dominated by a ultraviolet (UV) emission located at 380 nm from n-ZnO MR under high reverse biases. Light-output-current characteristic of the UV emission reveals that the rate of radiative recombination is faster than that of the nonradiative recombination. Highly efficient ZnO excitonic recombination at reverse bias is caused by electrons tunneling from deep-level states near the n-ZnO/p-GaN interface to the conduction band in n-ZnO.

  11. Gigabit-per-second white light-based visible light communication using near-ultraviolet laser diode and red-, green-, and blue-emitting phosphors.

    PubMed

    Lee, Changmin; Shen, Chao; Cozzan, Clayton; Farrell, Robert M; Speck, James S; Nakamura, Shuji; Ooi, Boon S; DenBaars, Steven P

    2017-07-24

    Data communication based on white light generated using a near-ultraviolet (NUV) laser diode (LD) pumping red-, green-, and blue-emitting (RGB) phosphors was demonstrated for the first time. A III-nitride laser diode (LD) on a semipolar (2021¯)  substrate emitting at 410 nm was used for the transmitter. The measured modulation bandwidth of the LD was 1 GHz, which was limited by the avalanche photodetector. The emission from the NUV LD and the RGB phosphor combination measured a color rendering index (CRI) of 79 and correlated color temperature (CCT) of 4050 K, indicating promise of this approach for creating high quality white lighting. Using this configuration, data was successfully transmitted at a rate of more than 1 Gbps. This NUV laser-based system is expected to have lower background noise from sunlight at the LD emission wavelength than a system that uses a blue LD due to the rapid fall off in intensity of the solar spectrum in the NUV spectral region.

  12. Simultaneous multi-wavelength ultraviolet excited single-phase white light emitting phosphor Ba1-x(Zr,Ti)Si3O9:xEu

    NASA Astrophysics Data System (ADS)

    Zhou, Zhenzhen; Liu, Guanghui; Ni, Jia; Liu, Wanlu; Liu, Qian

    2018-05-01

    A kind of novel compound Ba1-x(Zr,Ti)Si3O9:xEu simultaneously activated by different-valence Eu2+ and Eu3+ ions has been successfully synthesized. The existence of Ti4+-O2- charge transfer (CT) transitions in Ba1-xZrSi3O9:xEu is proved by the photoluminescence spectra and first principle calculations, and the Ti4+ ions come from the impurities in commercial ZrO2 raw materials. Under the excitation of multi-wavelength ultraviolet radiation (λEX = 392, 260, 180 nm), Ba1-xZrSi3O9:xEu (x = 0.15) can directly emit nearly white light. The coexistence of multiple luminescent centers and the energy transfer among Zr4+-O2- CT state, Ti4+-O2- CT state, Eu2+ and Eu3+ ions play important roles in the white light emission. Ba1-xZrSi3O9:xEu (x = 0.15) has good thermal stability, in particular, the intensity of emission spectrum (λEX = 392 nm) at 150 °C is ∼96% of that at room temperature. In general, the multi-wavelength ultraviolet-excited single-phase white light emitting phosphor Ba1-x(Zr,Ti)Si3O9:xEu possesses a promise for applications in white light emitting diodes (WLEDs), agriculture, medicine and other photonic fields.

  13. Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures.

    PubMed

    Ryu, Han-Youl

    2014-02-04

    Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS: 41.20.Jb; 42.72.Bj; 85.60.Jb.

  14. Large enhancement of light extraction efficiency in AlGaN-based nanorod ultraviolet light-emitting diode structures

    PubMed Central

    2014-01-01

    Light extraction efficiency (LEE) of AlGaN-based nanorod deep ultraviolet (UV) light-emitting diodes (LEDs) is numerically investigated using three-dimensional finite-difference time-domain simulations. LEE of deep UV LEDs is limited by strong light absorption in the p-GaN contact layer and total internal reflection. The nanorod structure is found to be quite effective in increasing LEE of deep UV LEDs especially for the transverse magnetic (TM) mode. In the nanorod LED, strong dependence of LEE on structural parameters such as the diameter of a nanorod and the p-GaN thickness is observed, which can be attributed to the formation of resonant modes inside the nanorod structure. Simulation results show that, when the structural parameters of the nanorod LED are optimized, LEE can be higher than 50% and 60% for the transverse electric (TE) and TM modes, respectively. The nanorod structure is expected to be a good candidate for the application to future high-efficiency deep UV LEDs. PACS 41.20.Jb; 42.72.Bj; 85.60.Jb PMID:24495598

  15. Light Converting Inorganic Phosphors for White Light-Emitting Diodes

    PubMed Central

    Chen, Lei; Lin, Chun-Che; Yeh, Chiao-Wen; Liu, Ru-Shi

    2010-01-01

    White light-emitting diodes (WLEDs) have matched the emission efficiency of florescent lights and will rapidly spread as light source for homes and offices in the next 5 to 10 years. WLEDs provide a light element having a semiconductor light emitting layer (blue or near-ultraviolet (nUV) LEDs) and photoluminescence phosphors. These solid-state LED lamps, rather than organic light emitting diode (OLED) or polymer light-emitting diode (PLED), have a number of advantages over conventional incandescent bulbs and halogen lamps, such as high efficiency to convert electrical energy into light, reliability and long operating lifetime. To meet with the further requirement of high color rendering index, warm light with low color temperature, high thermal stability and higher energy efficiency for WLEDs, new phosphors that can absorb excitation energy from blue or nUV LEDs and generate visible emissions efficiently are desired. The criteria of choosing the best phosphors, for blue (450−480 nm) and nUV (380−400 nm) LEDs, strongly depends on the absorption and emission of the phosphors. Moreover, the balance of light between the emission from blue-nUV LEDs and the emissions from phosphors (such as yellow from Y3Al5O12:Ce3+) is important to obtain white light with proper color rendering index and color temperature. Here, we will review the status of phosphors for LEDs and prospect the future development.

  16. A promising red-emitting phosphor for white-light-emitting diodes prepared by a modified solid-state reaction

    NASA Astrophysics Data System (ADS)

    Ren, Fuqiang; Chen, Donghua

    2010-02-01

    Using urea, boric acid and polyethylene glycol (PEG) as auxiliary reagents, the novel red-emitting phosphors Ca 19Zn 2 (PO 4) 14:Eu 3+ have been successfully synthesized by a modified solid-state reaction. Thermogravimetric (TG) analysis, X-ray diffraction (XRD), transmission electron microscopy (TEM) and photoluminescence (PL) spectra were used to characterize the resulting phosphors. The dependence of the photoluminescence properties of Ca 19Zn 2 (PO 4) 14:Eu 3+ phosphors upon urea, boric acid and PEG concentration and the quadric-sintered temperature were investigated. Luminescent measurements showed that the phosphors can be efficiently excited by ultraviolet (UV) to visible region, emitting a red light with a peak wavelength of 616 nm. The material has potential application as a fluorescent material for ultraviolet light-emitting diodes (UV-LEDs).

  17. Photon extraction from nitride ultraviolet light-emitting devices

    DOEpatents

    Schowalter, Leo J; Chen, Jianfeng; Grandusky, James R

    2015-02-24

    In various embodiments, a rigid lens is attached to a light-emitting semiconductor die via a layer of encapsulant having a thickness insufficient to prevent propagation of thermal expansion mismatch-induced strain between the rigid lens and the semiconductor die.

  18. Efficient photochemical generation of peroxycarboxylic nitric anhydrides with ultraviolet light emitting diodes

    NASA Astrophysics Data System (ADS)

    Rider, N. D.; Taha, Y. M.; Odame-Ankrah, C. A.; Huo, J. A.; Tokarek, T. W.; Cairns, E.; Moussa, S. G.; Liggio, J.; Osthoff, H. D.

    2015-01-01

    Photochemical sources of peroxycarboxylic nitric anhydrides (PANs) are utilized in many atmospheric measurement techniques for calibration or to deliver an internal standard. Conventionally, such sources rely on phosphor-coated low-pressure mercury (Hg) lamps to generate the UV light necessary to photo-dissociate a dialkyl ketone (usually acetone) in the presence of a calibrated amount of nitric oxide (NO) and oxygen (O2). In this manuscript, a photochemical PAN source in which the Hg lamp has been replaced by arrays of ultraviolet light-emitting diodes (UV-LEDs) is described. The output of the UV-LED source was analyzed by gas chromatography (PAN-GC) and thermal dissociation cavity ring-down spectroscopy (TD-CRDS). Using acetone, diethyl ketone (DIEK), diisopropyl ketone (DIPK), or di-n-propyl ketone (DNPK), respectively, the source produces peroxyacetic (PAN), peroxypropionic (PPN), peroxyisobutanoic (PiBN), or peroxy-n-butanoic nitric anhydride (PnBN) from NO in high yield (> 90%). Box model simulations with a subset of the Master Chemical Mechanism (MCM) were carried out to rationalize products yields and to identify side products. The use of UV-LED arrays offers many advantages over conventional Hg lamp setups, including greater light output over a narrower wavelength range, lower power consumption, and minimal generation of heat.

  19. Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes

    PubMed Central

    Lee, Keon Hwa; Moon, Yong-Tae; Song, June-O; Kwak, Joon Seop

    2015-01-01

    This study examined systematically the mechanism of light interaction in the sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the triple-layer ODR structure increased with decreasing surface roughness of the sapphire backside in the ODR. Theoretical modeling of the roughened surface suggests that the dependence of the reflectance of the triple-layer ODR structure on the surface roughness can be attributed mainly to light absorption by the Al nano-structures and the trapping of scattered light in the MgF2 layer. Furthermore, the ray tracing simulation based upon the theoretical modeling showed good agreement with the measured reflectance of the ODR structure in diffuse mode. PMID:26010378

  20. Light interaction in sapphire/MgF2/Al triple-layer omnidirectional reflectors in AlGaN-based near ultraviolet light-emitting diodes.

    PubMed

    Lee, Keon Hwa; Moon, Yong-Tae; Song, June-O; Kwak, Joon Seop

    2015-05-26

    This study examined systematically the mechanism of light interaction in the sapphire/MgF2/Al triple-layer omnidirectional reflectors (ODR) and its effects on the light output power in near ultraviolet light emitting diodes (NUV-LEDs) with the ODR. The light output power of NUV-LEDs with the triple-layer ODR structure increased with decreasing surface roughness of the sapphire backside in the ODR. Theoretical modeling of the roughened surface suggests that the dependence of the reflectance of the triple-layer ODR structure on the surface roughness can be attributed mainly to light absorption by the Al nano-structures and the trapping of scattered light in the MgF2 layer. Furthermore, the ray tracing simulation based upon the theoretical modeling showed good agreement with the measured reflectance of the ODR structure in diffuse mode.

  1. Enhanced Output Power of Near-Ultraviolet Light-Emitting Diodes by p-GaN Micro-Rods

    NASA Astrophysics Data System (ADS)

    Wang, Dong-Sheng; Zhang, Ke-Xiong; Liang, Hong-Wei; Song, Shi-Wei; Yang, De-Chao; Shen, Ren-Sheng; Liu, Yang; Xia, Xiao-Chuan; Luo, Ying-Min; Du, Guo-Tong

    2014-02-01

    Near-ultraviolet (UV) InGaN/AlGaN light-emitting diodes (LEDs) are grown by low-pressure metal-organic chemical vapor deposition. The scanning electronic microscope image shows that the p-GaN micro-rods are formed above the interface of p-AlGaN/p-GaN due to the rapid growth rate of p-GaN in the vertical direction. The p-GaN micro-rods greatly increase the escape probability of photons inside the LED structure. Electroluminescence intensities of the 372 nm UV LED lamps with p-GaN micro rods are 88% higher than those of the flat surface LED samples.

  2. Ultraviolet laser ablation as technique for defect repair of GaN-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Passow, Thorsten; Kunzer, Michael; Pfeuffer, Alexander; Binder, Michael; Wagner, Joachim

    2018-03-01

    Defect repair of GaN-based light-emitting diodes (LEDs) by ultraviolet laser micromachining is reported. Percussion and helical drilling in GaN by laser ablation were investigated using 248 nm nanosecond and 355 nm picosecond pulses. The influence of laser ablation including different laser parameters on electrical and optical properties of GaN-based LED chips was evaluated. The results for LEDs on sapphire with transparent conductive oxide p-type contact on top as well as for thin-film LEDs are reported. A reduction of leakage current by up to six orders in magnitude and homogeneous luminance distribution after proper laser defect treatment were achieved.

  3. Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

    NASA Astrophysics Data System (ADS)

    Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

    2013-03-01

    We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

  4. Efficient photochemical generation of peroxycarboxylic nitric anhydrides with ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Rider, N. D.; Taha, Y. M.; Odame-Ankrah, C. A.; Huo, J. A.; Tokarek, T. W.; Cairns, E.; Moussa, S. G.; Liggio, J.; Osthoff, H. D.

    2015-07-01

    Photochemical sources of peroxycarboxylic nitric anhydrides (PANs) are utilized in many atmospheric measurement techniques for calibration or to deliver an internal standard. Conventionally, such sources rely on phosphor-coated low-pressure mercury (Hg) lamps to generate the UV light necessary to photo-dissociate a dialkyl ketone (usually acetone) in the presence of a calibrated amount of nitric oxide (NO) and oxygen (O2). In this manuscript, a photochemical PAN source in which the Hg lamp has been replaced by arrays of ultraviolet light-emitting diodes (UV-LEDs) is described. The output of the UV-LED source was analyzed by gas chromatography (PAN-GC) and thermal dissociation cavity ring-down spectroscopy (TD-CRDS). Using acetone, diethyl ketone (DIEK), diisopropyl ketone (DIPK), or di-n-propyl ketone (DNPK), respectively, the source produces peroxyacetic (PAN), peroxypropionic (PPN), peroxyisobutanoic (PiBN), or peroxy-n-butanoic nitric anhydride (PnBN) from NO in high yield (> 90 %). Box model simulations with a subset of the Master Chemical Mechanism (MCM) were carried out to rationalize product yields and to identify side products. The present work demonstrates that UV-LED arrays are a viable alternative to current Hg lamp setups.

  5. Glass-Based Transparent Conductive Electrode: Its Application to Visible-to-Ultraviolet Light-Emitting Diodes.

    PubMed

    Lee, Tae Ho; Kim, Kyeong Heon; Lee, Byeong Ryong; Park, Ju Hyun; Schubert, E Fred; Kim, Tae Geun

    2016-12-28

    Nitride-based ultraviolet light-emitting diodes (UV LEDs) are promising replacements for conventional UV lamps. However, the external quantum efficiency of UV LEDs is much lower than for visible LEDs due to light absorption in the p-GaN contact and electrode layers, along with p-AlGaN growth and doping issues. To minimize such absorption, we should obtain direct ohmic contact to p-AlGaN using UV-transparent ohmic electrodes and not use p-GaN as a contact layer. Here, we propose a glass-based transparent conductive electrode (TCE) produced using electrical breakdown (EBD) of an AlN thin film, and we apply the thin film to four (Al)GaN-based visible and UV LEDs with thin buffer layers for current spreading and damage protection. Compared to LEDs with optimal ITO contacts, our LEDs with AlN TCEs exhibit a lower forward voltage, higher light output power, and brighter light emission for all samples. The ohmic transport mechanism for current injection and spreading from the metal electrode to p-(Al)GaN layer via AlN TCE is also investigated by analyzing the p-(Al)GaN surface before and after EBD.

  6. Tunnel-injected sub 290 nm ultra-violet light emitting diodes with 2.8% external quantum efficiency

    NASA Astrophysics Data System (ADS)

    Zhang, Yuewei; Jamal-Eddine, Zane; Akyol, Fatih; Bajaj, Sanyam; Johnson, Jared M.; Calderon, Gabriel; Allerman, Andrew A.; Moseley, Michael W.; Armstrong, Andrew M.; Hwang, Jinwoo; Rajan, Siddharth

    2018-02-01

    We report on the high efficiency tunnel-injected ultraviolet light emitting diodes (UV LEDs) emitting at 287 nm. Deep UV LED performance has been limited by the severe internal light absorption in the p-type contact layers and low electrical injection efficiency due to poor p-type conduction. In this work, a polarization engineered Al0.65Ga0.35N/In0.2Ga0.8N tunnel junction layer is adopted for non-equilibrium hole injection to replace the conventionally used direct p-type contact. A reverse-graded AlGaN contact layer is further introduced to realize a low resistance contact to the top n-AlGaN layer. This led to the demonstration of a low tunnel junction resistance of 1.9 × 10-3 Ω cm2 obtained at 1 kA/cm2. Light emission at 287 nm with an on-wafer peak external quantum efficiency of 2.8% and a wall-plug efficiency of 1.1% was achieved. The measured power density at 1 kA/cm2 was 54.4 W/cm2, confirming the efficient hole injection through interband tunneling. With the benefits of the minimized internal absorption and efficient hole injection, a tunnel-injected UV LED structure could enable future high efficiency UV emitters.

  7. Polarization of III-nitride blue and ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Shakya, J.; Knabe, K.; Kim, K. H.; Li, J.; Lin, J. Y.; Jiang, H. X.

    2005-02-01

    Polarization-resolved electroluminescence studies of III-nitride blue and ultraviolet (UV) light-emitting diodes (LEDs) were performed. The LEDs were fabricated on nitride materials grown by metalorganic chemical vapor deposition on sapphire substrates (0001). Transverse electric (TE) polarization dominates in the InGaN/GaN quantum-well (QW) blue LEDs (λ'=458nm), whereas transverse magnetic (TM) polarization is dominant in the AlInGaN QW UV LEDs (λ=333nm). For the case of edge emission in blue LEDs, a ratio (r=I⊥/I ‖) of about 1.8:1 was observed between the EL intensities with polarization E ⊥c (TE mode) and E ‖c (TM mode), which corresponds to a degree of polarization ˜0.29. The UV LEDs exhibit a ratio r of about 1:2.3, corresponding to a degree of polarization ˜0.4. This is due to the fact that the degree of polarization of the bandedge emission of the AlxInyGa1-x -yN active layer changes with Al concentration. The low emission efficiency of nitride UV LEDs is partly related to this polarization property. Possible consequences and ways to enhance UV emitter performances related to this unique polarization property are discussed.

  8. 282-nm AlGaN-based deep ultraviolet light-emitting diodes with improved performance on nano-patterned sapphire substrates

    NASA Astrophysics Data System (ADS)

    Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin

    2013-06-01

    We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.

  9. Advanced Oxidation of Tartrazine and Brilliant Blue with Pulsed Ultraviolet Light Emitting Diodes

    PubMed Central

    Scott, Robert; Mudimbi, Patrick; Miller, Michael E.; Magnuson, Matthew; Willison, Stuart; Phillips, Rebecca; Harper, Willie F.

    2018-01-01

    This study investigated the effect of ultraviolet light-emitting diodes (UVLEDs) coupled with hydrogen peroxide as an advanced oxidation process (AOP) for the degradation of two test chemicals. Brilliant Blue FCF consistently exhibited greater degradation than tartrazine, with 83% degradation after 300 minutes at the 100% duty cycle compared with only 17% degradation of tartrazine under the same conditions. These differences are attributable to the structural properties of the compounds. Duty cycle was positively correlated with the first-order rate constants (k) for both chemicals but, interestingly, negatively correlated with the normalized first-order rate constants (k/duty cycle). Synergistic effects of both hydraulic mixing and LED duty cycle were manifested as novel oscillations in the effluent contaminant concentration. Further, LED output and efficiency were dependent upon duty cycle and less efficient over time perhaps due to heating effects on semiconductor performance. PMID:28236826

  10. Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns

    PubMed Central

    Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

    2017-01-01

    In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results. PMID:28374856

  11. Indium gallium nitride-based ultraviolet, blue, and green light-emitting diodes functionalized with shallow periodic hole patterns.

    PubMed

    Jeong, Hyun; Salas-Montiel, Rafael; Lerondel, Gilles; Jeong, Mun Seok

    2017-04-04

    In this study, we investigated the improvement in the light output power of indium gallium nitride (InGaN)-based ultraviolet (UV), blue, and green light-emitting diodes (LEDs) by fabricating shallow periodic hole patterns (PHPs) on the LED surface through laser interference lithography and inductively coupled plasma etching. Noticeably, different enhancements were observed in the light output powers of the UV, blue, and green LEDs with negligible changes in the electrical properties in the light output power versus current and current versus voltage curves. In addition, confocal scanning electroluminescence microscopy is employed to verify the correlation between the enhancement in the light output power of the LEDs with PHPs and carrier localization of InGaN/GaN multiple quantum wells. Light propagation through the PHPs on the UV, blue, and green LEDs is simulated using a three-dimensional finite-difference time-domain method to confirm the experimental results. Finally, we suggest optimal conditions of PHPs for improving the light output power of InGaN LEDs based on the experimental and theoretical results.

  12. Feasibility of Ultraviolet Light Emitting Diodes as an Alternative Light Source for Photocatalysis

    NASA Technical Reports Server (NTRS)

    Levine, Langanf H.; Richards, Jeffrey T.; Soler, Robert; Maxik, Fred; Coutts, Janelle; Wheeler, Raymond M.

    2011-01-01

    The objective of this study was to determine whether ultraviolet light emitting diodes (UV-LEDs) could serve as an alternative photon source efficiently for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp in a Silica-Titania Composite (STC) packed bed annular reactor. Lighting and thermal properties were characterized to assess the uniformity and total irradiant output. A forward current of (I(sub F)) 100 mA delivered an average irradiance of 4.0 m W cm(exp -2), which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED- and BLB-reactors were tested for the oxidization of 50 ppmv ethanol in a continuous flow-through mode with 0.94 sec space time. At the same irradiance, the UV-A LED reactor resulted in a lower PCO rate constant than the UV-A BLB reactor (19.8 vs. 28.6 nM CO2 sec-I), and consequently lower ethanol removal (80% vs. 91%) and mineralization efficiency (28% vs. 44%). Ethanol mineralization increased in direct proportion to the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED- reactor could be traced to uneven irradiance over the photocatalyst, leaving a portion of the catalyst was under-irradiated. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off' feature for periodic irradiation. Nevertheless, the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB. These results demonstrated that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

  13. Performance improvement of AlGaN-based deep-ultraviolet light-emitting diodes via Al-composition graded quantum wells

    NASA Astrophysics Data System (ADS)

    Lu, Lin; Zhang, Yu; Xu, Fujun; Ding, Gege; Liu, Yuhang

    2018-06-01

    Characteristics of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) with step-like and Al-composition graded quantum wells have been investigated. The simulation results show that compared to DUV-LEDs with the conventional AlGaN multiple quantum wells (MQWs) structure, the light output power (LOP) and efficiency droop of DUV-LEDs with the Al-composition graded wells were remarkably improved. The key factor accounting for the improved performance is ascribed to the better modulation of carrier distribution in the quantum wells to increase the overlap between electron and hole wavefunctions, which contributes to more efficient recombination of electrons and holes, and thereby a significant enhancement in the LOP.

  14. Recent developments in white light emitting diodes

    NASA Astrophysics Data System (ADS)

    Lohe, P. P.; Nandanwar, D. V.; Belsare, P. D.; Moharil, S. V.

    2018-05-01

    In the recent years solid state lighting based on LEDs has revolutionized lighting technology. LEDs have many advantages over the conventional lighting based on fluorescent and incandescent lamps such as mercury free, high conversion efficiency of electrical energy into light, long lifetime reliability and ability to use with many types of devices. LEDs have emerged as a new potentially revolutionary technology that could save up to half of energy used for lighting applications. White LEDs would be the most important light source in the future, so much so that this aspect had been highlighted by the Nobel committee during the award of 2014 Nobel Prize for Physics. Recent advancement in the fabrication of GaN chip capable of emitting in blue and near UV region paved way for fabrication of white LED lamps. Mainly there are two approaches used for preparing white emitting solid state lamp. In the first approach blue light (λ=450 nm) emitted from the InGaN LED chip is partially absorbed by the YAG:Ce3+ phosphor coated on it and re-emitted as yellow fluorescence. A white light can be generated by the combination of blue + yellow emission bands. These lamps are already available. But they are suffering from major drawback that their Colour Rendering Index (CRI) is low. In the second approach, white LEDs are made by coating near ultraviolet emitting (360 to 410nm) LED with a mixture of high efficiency red, green and blue emitting phosphors, analogous to the fluorescent lamp. This method yields lamps with better color rendition. Addition of a yellow emitting phosphor improves CRI further. However conversion efficiency is compromised to some extent. Further the cost of near UV emitting chip is very high compared to blue emitting chips. Thus cost and light output wise, near UV chips are much inferior to blue chips. Recently some rare earth activated oxynitrides, silicates, fluorides have emerged as an important family of luminescent materials for white LED application

  15. Flexible deep-ultraviolet light-emitting diodes for significant improvement of quantum efficiencies by external bending

    NASA Astrophysics Data System (ADS)

    Shervin, Shahab; Oh, Seung Kyu; Park, Hyun Jung; Lee, Keon-Hwa; Asadirad, Mojtaba; Kim, Seung-Hwan; Kim, Jeomoh; Pouladi, Sara; Lee, Sung-Nam; Li, Xiaohang; Kwak, Joon Seop; Ryou, Jae-Hyun

    2018-03-01

    We report a new route to improve quantum efficiencies of AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using mechanical flexibility of recently developed bendable thin-film structures. Numerical studies show that electronic band structures of AlGaN heterostructures and resulting optical and electrical characteristics of the devices can be significantly modified by external bending through active control of piezoelectric polarization. Internal quantum efficiency is enhanced higher than three times, when the DUV LEDs are moderately bent with concave curvatures. Furthermore, an efficiency droop at high injection currents is mitigated and turn-on voltage of diodes decreases with the same bending condition. The concept of bendable DUV LEDs with a controlled external strain can provide a new path for high-output-power and high-efficiency devices.

  16. A fiber optic, ultraviolet light-emitting diode-based, two wavelength fluorometer for monitoring reactive adsorption

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Granz, Christopher D.; Whitten, James E., E-mail: James-Whitten@uml.edu; Schindler, Bryan J.

    Construction and use of an ultraviolet light-emitting diode-based fluorometer for measuring photoluminescence (PL) from powder samples with a fiber optic probe is described. Fluorescence at two wavelengths is detected by miniature photomultiplier tubes, each equipped with a different band pass filter, whose outputs are analyzed by a microprocessor. Photoluminescent metal oxides and hydroxides, and other semiconducting nanoparticles, often undergo changes in their emission spectra upon exposure to reactive gases, and the ratio of the PL intensities at two wavelengths is diagnostic of adsorption. Use of this instrument for reactive gas sensing and gas filtration applications is illustrated by measuring changesmore » in the PL ratio for zirconium hydroxide and zinc oxide particles upon exposure to air containing low concentrations of sulfur dioxide.« less

  17. The Development of Ultraviolet Light Emitting Diodes on p-SiC Substrates

    NASA Astrophysics Data System (ADS)

    Brummer, Gordon

    Ultraviolet (UV) light emitting diodes (LEDs) are promising light sources for purification, phototherapy, and resin curing applications. Currently, commercial UV LEDs are composed of AlGaN-based n-i-p junctions grown on sapphire substrates. These devices suffer from defects in the active region, inefficient p-type doping, and poor light extraction efficiency. This dissertation addresses the development of a novel UV LED device structure, grown on p-SiC substrates. In this device structure, the AlGaN-based intrinsic (i) and n-layers are grown directly on the p-type substrate, forming a p-i-n junction. The intrinsic layer (active region) is composed of an AlN buffer layer followed by three AlN/Al0.30Ga0.70N quantum wells. After the intrinsic layer, the n-layer is formed from n-type AlGaN. This device architecture addresses the deficiencies of UV LEDs on sapphire substrates while providing a vertical device geometry, reduced fabrication complexity, and improved thermal management. The device layers were grown by molecular beam epitaxy (MBE). The material properties were optimized by considering varying growth conditions and by considering the role of the layer within the device. AlN grown at 825 C and with a Ga surfactant yielded material with screw dislocation density of 1x10 7 cm-2 based on X-ray diffraction (XRD) analysis. AlGaN alloys grown in this work contained compositional inhomogeneity, as verified by high-resolution XRD, photoluminescence, and absorption measurements. Based on Stokes shift measurements, the degree of compositional inhomogeneity was correlated with the amount of excess Ga employed during growth. Compositional inhomogeneity yields carrier localizing potential fluctuations, which are advantages in light emitting device layers. Therefore, excess Ga growth conditions were used to grow AlN/Al0.30Ga0.70N quantum wells (designed using a wurtzite k.p model) with 35% internal quantum efficiency. Potential fluctuations limit the mobility of carriers

  18. Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

    NASA Astrophysics Data System (ADS)

    Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka

    2013-04-01

    We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.

  19. Comparison of ultraviolet light-emitting diodes and low-pressure mercury-arc lamps for disinfection of water.

    PubMed

    Sholtes, Kari A; Lowe, Kincaid; Walters, Glenn W; Sobsey, Mark D; Linden, Karl G; Casanova, Lisa M

    2016-09-01

    Ultraviolet (UV) light-emitting diodes (LEDs) emitting at 260 nm were evaluated to determine the inactivation kinetics of bacteria, viruses, and spores compared to low-pressure (LP) UV irradiation. Test microbes were Escherichia coli B, a non-enveloped virus (MS-2), and a bacterial spore (Bacillus atrophaeus). For LP UV, 4-log10 reduction doses were: E. coli B, 6.5 mJ/cm(2); MS-2, 59.3 mJ/cm(2); and B. atrophaeus, 30.0 mJ/cm(2). For UV LEDs, the 4-log10 reduction doses were E. coli B, 6.2 mJ/cm(2); MS-2, 58 mJ/cm(2); and B. atrophaeus, 18.7 mJ/cm(2). Microbial inactivation kinetics of the two UV technologies were not significantly different for E. coli B and MS-2, but were different for B. atrophaeus spores. UV LEDs at 260 nm are at least as effective for inactivating microbes in water as conventional LP UV sources and should undergo further development in treatment systems to disinfect drinking water.

  20. Feasibility of ultraviolet-light-emitting diodes as an alternative light source for photocatalysis.

    PubMed

    Levine, Lanfang H; Richards, Jeffrey T; Coutts, Janelle L; Soler, Robert; Maxik, Fred; Wheeler, Raymond M

    2011-09-01

    The objective of this study was to determine whether ultraviolet-light-emitting diodes (UV-LEDs) could serve as an efficient photon source for heterogeneous photocatalytic oxidation (PCO). An LED module consisting of 12 high-power UV-A (lambda max = 365 nm) LEDs was designed to be interchangeable with a UV-A fluorescent black light blue (BLB) lamp for a bench scale annular reactor packed with silica-titania composite (STC) pellets. Lighting and thermal properties of the module were characterized to assess its uniformity and total irradiance. A forward current (I(F)) of 100 mA delivered an average irradiance of 4.0 mW cm(-2) at a distance of 8 mm, which is equivalent to the maximum output of the BLB, but the irradiance of the LED module was less uniform than that of the BLB. The LED and BLB reactors were tested for the oxidization of ethanol (50 ppm(v)) in a continuous-flow-through mode with 0.94 sec residence time. At the same average irradiance, the UV-A LED reactor resulted in a lower CO2 production rate (19.8 vs. 28.6 nmol L(-1) s(-1)), lower ethanol removal (80% vs. 91%), and lower mineralization efficiency (28% vs. 44%) than the UV-A BLB reactor. Ethanol mineralization was enhanced with the increase of the irradiance at the catalyst surface. This result suggests that reduced ethanol mineralization in the LED reactor relative to the BLB reactor at the same average irradiance could be attributed to the nonuniform irradiance over the photocatalyst, that is, a portion of the catalyst was exposed to less than the average irradiance. The potential of UV-A LEDs may be fully realized by optimizing the light distribution over the catalyst and utilizing their instantaneous "on" and "off" feature for periodic irradiation. Nevertheless, our results also showed that the current UV-A LED module had the same wall plug efficiency (WPE) of 13% as that of the UV-A BLB, demonstrating that UV-A LEDs are a viable photon source both in terms of WPE and PCO efficiency.

  1. Highly ultraviolet transparent textured indium tin oxide thin films and the application in light emitting diodes

    NASA Astrophysics Data System (ADS)

    Chen, Zimin; Zhuo, Yi; Tu, Wenbin; Ma, Xuejin; Pei, Yanli; Wang, Chengxin; Wang, Gang

    2017-06-01

    Various kinds of materials have been developed as transparent conductors for applications in semiconductor optoelectronic devices. However, there is a bottleneck that transparent conductive materials lose their transparency at ultraviolet (UV) wavelengths and could not meet the demands for commercial UV device applications. In this work, textured indium tin oxide (ITO) is grown and its potential to be used at UV wavelengths is explored. It is observed that the pronounced Burstein-Moss effect could widen the optical bandgap of the textured ITO to 4.7 eV. The average transmittance in UVA (315 nm-400 nm) and UVB (280 nm-315 nm) ranges is as high as 94% and 74%, respectively. The excellent optical property of textured ITO is attributed to its unique structural property. The compatibility of textured ITO thin films to the device fabrication is demonstrated on 368-nm nitride-based light emitting diodes, and the enhancement of light output power by 14.8% is observed compared to sputtered ITO.

  2. Simultaneously Enhancing Light Emission and Suppressing Efficiency Droop in GaN Microwire-Based Ultraviolet Light-Emitting Diode by the Piezo-Phototronic Effect.

    PubMed

    Wang, Xingfu; Peng, Wenbo; Yu, Ruomeng; Zou, Haiyang; Dai, Yejing; Zi, Yunlong; Wu, Changsheng; Li, Shuti; Wang, Zhong Lin

    2017-06-14

    Achievement of p-n homojuncted GaN enables the birth of III-nitride light emitters. Owing to the wurtzite-structure of GaN, piezoelectric polarization charges present at the interface can effectively control/tune the optoelectric behaviors of local charge-carriers (i.e., the piezo-phototronic effect). Here, we demonstrate the significantly enhanced light-output efficiency and suppressed efficiency droop in GaN microwire (MW)-based p-n junction ultraviolet light-emitting diode (UV LED) by the piezo-phototronic effect. By applying a -0.12% static compressive strain perpendicular to the p-n junction interface, the relative external quantum efficiency of the LED is enhanced by over 600%. Furthermore, efficiency droop is markedly reduced from 46.6% to 7.5% and corresponding droop onset current density shifts from 10 to 26.7 A cm -2 . Enhanced electrons confinement and improved holes injection efficiency by the piezo-phototronic effect are revealed and theoretically confirmed as the physical mechanisms. This study offers an unconventional path to develop high efficiency, strong brightness and high power III-nitride light sources.

  3. High power ultraviolet light emitting diodes based on GaN /AlGaN quantum wells produced by molecular beam epitaxy

    NASA Astrophysics Data System (ADS)

    Cabalu, J. S.; Bhattacharyya, A.; Thomidis, C.; Friel, I.; Moustakas, T. D.; Collins, C. J.; Komninou, Ph.

    2006-11-01

    In this paper, we report on the growth by molecular beam epitaxy and fabrication of high power nitride-based ultraviolet light emitting diodes emitting in the spectral range between 340 and 350nm. The devices were grown on (0001) sapphire substrates via plasma-assisted molecular beam epitaxy. The growth of the light emitting diode (LED) structures was preceded by detailed materials studies of the bottom n-AlGaN contact layer, as well as the GaN /AlGaN multiple quantum well (MQW) active region. Specifically, kinetic conditions were identified for the growth of the thick n-AlGaN films to be both smooth and to have fewer defects at the surface. Transmission-electron microscopy studies on identical GaN /AlGaN MQWs showed good quality and well-defined interfaces between wells and barriers. Large area mesa devices (800×800μm2) were fabricated and were designed for backside light extraction. The LEDs were flip-chip bonded onto a Si submount for better heat sinking. For devices emitting at 340nm, the measured differential on-series resistance is 3Ω with electroluminescence spectrum full width at half maximum of 18nm. The output power under dc bias saturates at 0.5mW, while under pulsed operation it saturates at approximately 700mA to a value of 3mW, suggesting that thermal heating limits the efficiency of these devices. The output power of the investigated devices was found to be equivalent with those produced by the metal-organic chemical vapor deposition and hydride vapor-phase epitaxy methods. The devices emitting at 350nm were investigated under dc operation and the output power saturates at 4.5mW under 200mA drive current.

  4. AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates with significant improvement in internal quantum efficiency

    NASA Astrophysics Data System (ADS)

    Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin

    2014-06-01

    We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.

  5. MAHLI First Night Imaging of Martian Rock Under Ultraviolet Lighting

    NASA Image and Video Library

    2013-01-24

    This image of a Martian rock dubbed Sayunei is illuminated by ultraviolet LEDs light emitting diodes is part of the first set of nighttime images taken by the Mars Hand Lens Imagery camera at the end of the robotic arm of NASA Mars rover Curiosity.

  6. Effects of ultraviolet light emitting diodes (LEDs) on microbial and enzyme inactivation of apple juice.

    PubMed

    Akgün, Merve Pelvan; Ünlütürk, Sevcan

    2017-11-02

    In this study, the effects of Ultraviolet light-emitting diodes (UV-LEDs) on the inactivation of E. coli K12 (ATCC 25253), an indicator organism of E. coli O157:H7, and polyphneoloxidase (PPO) in cloudy apple juice (CAJ) were investigated. The clear (AJ) and cloudy apple juice were exposed to UV rays for 40min by using a UV device composed of four UV-LEDs with peak emissions at 254 and 280nm and coupled emissions as follows: 254/365, 254/405, 280/365, 280/405 and 254/280/365/405nm. UV-LEDs at 254nm achieved 1.6±0.1 log 10 CFU/mL inactivation of E. coli K12 at UV dose of 707.2mJ/cm 2 . The highest inactivation of E. coli K12 (2.0±0.1log 10 CFU/mL and 2.0±0.4log 10 CFU/mL) was achieved when the cloudy apple juice was treated with both 280nm and 280/365nm UV-LEDs. For clear apple juice the highest inactivation 4.4log 10 CFU/mL obtained for E. coli K12 was achieved using 4 lamps emitting light at 280nm for 40min exposure time. For the same treatment time, the experiments using a combination of lamps emitting light at 280 and 365nm (2lamp/2lamp) were resulted in 3.9±0.2log 10 CFU/mL reductions. UV-A and UV-C rays in combination showed a better inactivation effect on PPO than UV-C rays used separately. Residual activity of PPO in CAJ was reduced to 32.58% when treated with UV-LED in combination of UV-C (280nm) and UV-A (365nm) rays. Additionally, the total color change (ΔE) of CAJ subjected to combined UV-LED irradiation at 280/365nm was the lowest compared to other studied processing conditions. This study provides key implications for the future application of UV-LEDs to fruit juice pasteurization. Copyright © 2017 Elsevier B.V. All rights reserved.

  7. An aluminium nitride light-emitting diode with a wavelength of 210 nanometres.

    PubMed

    Taniyasu, Yoshitaka; Kasu, Makoto; Makimoto, Toshiki

    2006-05-18

    Compact high-efficiency ultraviolet solid-state light sources--such as light-emitting diodes (LEDs) and laser diodes--are of considerable technological interest as alternatives to large, toxic, low-efficiency gas lasers and mercury lamps. Microelectronic fabrication technologies and the environmental sciences both require light sources with shorter emission wavelengths: the former for improved resolution in photolithography and the latter for sensors that can detect minute hazardous particles. In addition, ultraviolet solid-state light sources are also attracting attention for potential applications in high-density optical data storage, biomedical research, water and air purification, and sterilization. Wide-bandgap materials, such as diamond and III-V nitride semiconductors (GaN, AlGaN and AlN; refs 3-10), are potential materials for ultraviolet LEDs and laser diodes, but suffer from difficulties in controlling electrical conduction. Here we report the successful control of both n-type and p-type doping in aluminium nitride (AlN), which has a very wide direct bandgap of 6 eV. This doping strategy allows us to develop an AlN PIN (p-type/intrinsic/n-type) homojunction LED with an emission wavelength of 210 nm, which is the shortest reported to date for any kind of LED. The emission is attributed to an exciton transition, and represents an important step towards achieving exciton-related light-emitting devices as well as replacing gas light sources with solid-state light sources.

  8. Current crowding and self-heating effects in AlGaN-based flip-chip deep-ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

    2018-01-01

    We thoroughly explored the physical origin of the efficiency decrease with increasing injection current and current crowding effect in 280 nm AlGaN-based flip-chip deep-ultraviolet (DUV) light-emitting diodes (LEDs). The current spreading length was experimentally determined to be much smaller in DUV LEDs than that in conventional InGaN-based visible LEDs. The severe self-heating caused by the low power conversion efficiency of DUV LEDs should be mainly responsible for the considerable decrease of efficiency when current crowding is present. The wall-plug efficiency of the DUV LEDs was markedly enhanced by using a well-designed p-electrode pattern to improve the current distribution.

  9. Ultraviolet Light Emitting Diode Use in Advanced Oxidation Processes

    DTIC Science & Technology

    2014-03-27

    or medium pressure mercury lamps , but UV light emitting diodes ( LEDs ) have the capacity to be used for water disinfection also. Traditional mercury...based upon the phosphors that are selected and used to coat the inside of the glass tube from which these lamps are produced. A UV LED is...Research has demonstrated the ability to use UV LEDs in place of mercury lamps to achieve the same 7 disinfection capacity, and limited research has

  10. Top-emitting organic light-emitting diodes.

    PubMed

    Hofmann, Simone; Thomschke, Michael; Lüssem, Björn; Leo, Karl

    2011-11-07

    We review top-emitting organic light-emitting diodes (OLEDs), which are beneficial for lighting and display applications, where non-transparent substrates are used. The optical effects of the microcavity structure as well as the loss mechanisms are discussed. Outcoupling techniques and the work on white top-emitting OLEDs are summarized. We discuss the power dissipation spectra for a monochrome and a white top-emitting OLED and give quantitative reports on the loss channels. Furthermore, the development of inverted top-emitting OLEDs is described.

  11. High efficiency single Ag nanowire/p-GaN substrate Schottky junction-based ultraviolet light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wu, Y.; Li, X.; Xu, P.

    2015-02-02

    We report a high efficiency single Ag nanowire (NW)/p-GaN substrate Schottky junction-based ultraviolet light emitting diode (UV-LED). The device demonstrates deep UV free exciton electroluminescence at 362.5 nm. The dominant emission, detectable at ultralow (<1 μA) forward current, does not exhibit any shifts when the forward current is increased. External quantum efficiency (EQE) as high as 0.9% is achieved at 25 μA current at room temperature. Experiments and simulation analysis show that devices fabricated with thinner Ag NWs have higher EQE. However, for very thin Ag NWs (diameter < 250 nm), this trend breaks down due to heat accumulation in the NWs. Our simple device architecturemore » offers a potentially cost-effective scheme to fabricate high efficiency Schottky junction-based UV-LEDs.« less

  12. SUMER: Solar Ultraviolet Measurements of Emitted Radiation

    NASA Technical Reports Server (NTRS)

    Wilhelm, K.; Axford, W. I.; Curdt, W.; Gabriel, A. H.; Grewing, M.; Huber, M. C. E.; Jordan, S. D.; Kuehne, M.; Lemaire, P.; Marsch, E.

    1992-01-01

    The experiment Solar Ultraviolet Measurements of Emitted Radiation (SUMER) is designed for the investigations of plasma flow characteristics, turbulence and wave motions, plasma densities and temperatures, structures and events associated with solar magnetic activity in the chromosphere, the transition zone and the corona. Specifically, SUMER will measure profiles and intensities of Extreme Ultraviolet (EUV) lines emitted in the solar atmosphere ranging from the upper chromosphere to the lower corona; determine line broadenings, spectral positions and Doppler shifts with high accuracy, provide stigmatic images of selected areas of the Sun in the EUV with high spatial, temporal and spectral resolution and obtain full images of the Sun and the inner corona in selectable EUV lines, corresponding to a temperature from 10,000 to more than 1,800,000 K.

  13. Detection and modeling of leakage current in AlGaN-based deep ultraviolet light-emitting diodes

    DOE PAGES

    Moseley, Michael William; Allerman, Andrew A.; Crawford, Mary H.; ...

    2015-03-01

    Current-voltage (IV) characteristics of two AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) with differing densities of open-core threading dislocations (nanopipes) are analyzed. A three-diode circuit is simulated to emulate the IV characteristics of the DUV-LEDs, but is only able to accurately model the lower leakage current, lower nanopipe density DUV-LED. It was found that current leakage through the nanopipes in these structures is rectifying, despite nanopipes being previously established as inherently n-type. Using defect-sensitive etching, the nanopipes are revealed to terminate within the p-type GaN capping layer of the DUV-LEDs. The circuit model is modified to account for another p-nmore » junction between the n-type nanopipes and the p-type GaN, and an excellent fit to the IV characteristics of the leaky DUV-LED is achieved.« less

  14. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Miller, Mary A.; Tangyunyong, Paiboon; Cole, Edward I.

    2016-01-14

    Laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes (LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increased leakage ismore » not present in devices without AVM signals. Transmission electron microscopy analysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

  15. Characterization of electrically-active defects in ultraviolet light-emitting diodes with laser-based failure analysis techniques

    DOE PAGES

    Miller, Mary A.; Tangyunyong, Paiboon; Edward I. Cole, Jr.

    2016-01-12

    In this study, laser-based failure analysis techniques demonstrate the ability to quickly and non-intrusively screen deep ultraviolet light-emitting diodes(LEDs) for electrically-active defects. In particular, two laser-based techniques, light-induced voltage alteration and thermally-induced voltage alteration, generate applied voltage maps (AVMs) that provide information on electrically-active defect behavior including turn-on bias, density, and spatial location. Here, multiple commercial LEDs were examined and found to have dark defect signals in the AVM indicating a site of reduced resistance or leakage through the diode. The existence of the dark defect signals in the AVM correlates strongly with an increased forward-bias leakage current. This increasedmore » leakage is not present in devices without AVM signals. Transmission electron microscopyanalysis of a dark defect signal site revealed a dislocation cluster through the pn junction. The cluster included an open core dislocation. Even though LEDs with few dark AVM defect signals did not correlate strongly with power loss, direct association between increased open core dislocation densities and reduced LED device performance has been presented elsewhere [M. W. Moseley et al., J. Appl. Phys. 117, 095301 (2015)].« less

  16. Continuous-wave ultraviolet generation at 320 nm by intracavity frequency doubling of red-emitting Praseodymium lasers

    NASA Astrophysics Data System (ADS)

    Richter, A.; Pavel, N.; Heumann, E.; Huber, G.; Parisi, D.; Toncelli, A.; Tonelli, M.; Diening, A.; Seelert, W.

    2006-04-01

    We describe a new approach for the generation of coherent ultraviolet radiation. Continuous-wave ultraviolet light at 320 nm has been obtained by intracavity frequency doubling of red-emitting Praseodymium lasers. Lasing at the 640-nm fundamental wavelength in Pr:LiYF4 and Pr:BaY2F8 was realized by employing an optically pumped semiconductor laser at 480 nm as pump source.Using LiB3O5 as nonlinear medium, ~19 mW of ultraviolet radiation with ~9% optical efficiency with respect to absorbed power was reached for both laser crystals; the visible-to-ultraviolet conversion efficiency was 26% and 35% for Pr:LiYF4 and Pr:BaY2F8, respectively.

  17. The electronics in fluorescent bulbs and light emitting diodes (LED), rather than ultraviolet radiation, cause increased malignant melanoma incidence in indoor office workers and tanning bed users.

    PubMed

    Milham, Samuel; Stetzer, Dave

    2018-07-01

    The epidemiology of cutaneous malignant melanoma (CMM) has a number of facets that do not fit with sunlight and ultraviolet light as the primary etiologic agents. Indoor workers have higher incidence and mortality rates of CMM than outdoor workers; CMM occurs in body locations never exposed to sunlight; CMM incidence is increasing in spite of use of UV blocking agents and small changes in solar radiation. Installation of two new fluorescent lights in the milking parlor holding area of a Minnesota dairy farm in 2015 caused an immediate drop in milk production. This lead to measurement of body amperage in humans exposed to modern non-incandescent lighting. People exposed to old and new fluorescent lights, light emitting diodes (LED) and compact fluorescent lights (CFL) had body amperage levels above those considered carcinogenic. We hypothesize that modern electric lighting is a significant health hazard, a carcinogen, and is causing increasing CMM incidence in indoor office workers and tanning bed users. These lights generate dirty electricity (high frequency voltage transients), radio frequency (RF) radiation, and increase body amperage, all of which have been shown to be carcinogenic. This could explain the failure of ultraviolet blockers to stem the malignant melanoma pandemic. Tanning beds and non-incandescent lighting could be made safe by incorporating a grounded Faraday cage which allows passage of ultraviolet and visible light frequencies and blocks other frequencies. Modern electric lighting should be fabricated to be electrically clean. Copyright © 2018 Elsevier Ltd. All rights reserved.

  18. Ultraviolet radiation emitted by lamps, TVs, tablets and computers: are there risks for the population?

    PubMed

    Duarte, Ida Alzira Gomes; Hafner, Mariana de Figueiredo Silva; Malvestiti, Andrey Augusto

    2015-01-01

    The frequent human exposure to various types of indoor lamps, as well as other light sources (television monitors, tablets and computers), raises a question: are there risks for the population? In the present study the emission of UVA and UVB radiation by lamps and screens of electronic devices were measured in order to determine the safe distance between the emitting source and the individual. We concluded that the lamps and electronic devices do not emit ultraviolet radiation; so they pose no health risk for the population.

  19. SUMER: Solar Ultraviolet Measurements of Emitted Radiation

    NASA Technical Reports Server (NTRS)

    Wilhelm, K.; Axford, W. I.; Curdt, W.; Gabriel, A. H.; Grewing, M.; Huber, M. C. E.; Jordan, M. C. E.; Lemaire, P.; Marsch, E.; Poland, A. I.

    1988-01-01

    The SUMER (solar ultraviolet measurements of emitted radiation) experiment is described. It will study flows, turbulent motions, waves, temperatures and densities of the plasma in the upper atmosphere of the Sun. Structures and events associated with solar magnetic activity will be observed on various spatial and temporal scales. This will contribute to the understanding of coronal heating processes and the solar wind expansion. The instrument will take images of the Sun in EUV (extreme ultra violet) light with high resolution in space, wavelength and time. The spatial resolution and spectral resolving power of the instrument are described. Spectral shifts can be determined with subpixel accuracy. The wavelength range extends from 500 to 1600 angstroms. The integration time can be as short as one second. Line profiles, shifts and broadenings are studied. Ratios of temperature and density sensitive EUV emission lines are established.

  20. High-brightness and high-color purity red-emitting Ca3Lu(AlO)3(BO3)4:Eu3+ phosphors with internal quantum efficiency close to unity for near-ultraviolet-based white-light-emitting diodes.

    PubMed

    Huang, Xiaoyong; Wang, Shaoying; Li, Bin; Sun, Qi; Guo, Heng

    2018-03-15

    In this work, we reported on high-brightness Eu 3+ -activated Ca 3 Lu(AlO) 3 (BO 3 ) 4 (CLAB) red-emitting phosphors. Under 397 nm excitation, the CLAB:Eu 3+ phosphors showed intense red emissions at around 621 nm with CIE coordinates of (0.657, 0.343). The optimal doping concentration of Eu 3+ ions was found to be 30 mol. %, and the CLAB:0.3Eu 3+ sample possessed high-color purity of 93% and ultra-high internal quantum efficiency as great as 98.5%. Importantly, the CLAB:0.3Eu 3+ also had good thermal stability. Finally, a white-light-emitting diode (WLED) lamp with good color-rendering index was fabricated by using a 365 nm ultraviolet chip and the phosphor blends of CLAB:0.3Eu 3+ red-emitting phosphors, (Ba,Sr) 2 SiO 4 :Eu 2+ green-emitting phosphors, and BaMgAl 10 O 7 :Eu 2+ blue-emitting phosphors.

  1. Ultraviolet radiation emitted by lamps, TVs, tablets and computers: are there risks for the population?

    PubMed Central

    Duarte, Ida Alzira Gomes; Hafner, Mariana de Figueiredo Silva; Malvestiti, Andrey Augusto

    2015-01-01

    The frequent human exposure to various types of indoor lamps, as well as other light sources (television monitors, tablets and computers), raises a question: are there risks for the population? In the present study the emission of UVA and UVB radiation by lamps and screens of electronic devices were measured in order to determine the safe distance between the emitting source and the individual. We concluded that the lamps and electronic devices do not emit ultraviolet radiation; so they pose no health risk for the population. PMID:26375236

  2. Photovoltaic powered ultraviolet and visible light-emitting diodes for sustainable point-of-use disinfection of drinking waters.

    PubMed

    Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas; Jagals, Paul; Stuetz, Richard

    2014-09-15

    For many decades, populations in rural and remote developing regions will be unable to access centralised piped potable water supplies, and indeed, decentralised options may be more sustainable. Accordingly, improved household point-of-use (POU) disinfection technologies are urgently needed. Compared to alternatives, ultraviolet (UV) light disinfection is very attractive because of its efficacy against all pathogen groups and minimal operational consumables. Though mercury arc lamp technology is very efficient, it requires frequent lamp replacement, involves a toxic heavy metal, and their quartz envelopes and sleeves are expensive, fragile and require regular cleaning. An emerging alternative is semiconductor-based units where UV light emitting diodes (UV-LEDs) are powered by photovoltaics (PV). Our review charts the development of these two technologies, their current status, and challenges to their integration and POU application. It explores the themes of UV-C-LEDs, non-UV-C LED technology (e.g. UV-A, visible light, Advanced Oxidation), PV power supplies, PV/LED integration and POU suitability. While UV-C LED technology should mature in the next 10 years, research is also needed to address other unresolved barriers to in situ application as well as emerging research opportunities especially UV-A, photocatalyst/photosensitiser use and pulsed emission options. Copyright © 2014 Elsevier B.V. All rights reserved.

  3. Lighting theory and luminous characteristics of white light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Uchida, Yuji; Taguchi, Tsunemasa

    2005-12-01

    A near-ultraviolet (UV)-based white light-emitting diode (LED) lighting system linked with a semiconductor InGaN LED and compound phosphors for general lighting applications is proposed. We have developed for the first time a novel type of high-color rendering index (Ra) white LED light source, which is composed of near-UV LED and multiphosphor materials showing orange (O), yellow (Y), green (G), and blue (B) emissions. The white LED shows the superior characteristics of luminous efficacy and high Ra to be about 40 lm/W and 93, respectively. Luminous and chromaticity characteristics, and their spectral distribution of the present white LED can be evaluated using the multipoint LED light source theory. It is revealed that the OYGB white LED can provide better irradiance properties than that of conventional white LEDs. Near-UV white LED technologies, in conjunction with phosphor blends, can offer superior color uniformity, high Ra, and excellent light quality. Consequently we are carrying out a "white LEDs for medical applications" program in the second phase of this national project from 2004 to 2009.

  4. The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

    PubMed Central

    Seo, Tae Hoon; Lee, Seula; Min, Kyung Hyun; Chandramohan, S.; Park, Ah Hyun; Lee, Gun Hee; Park, Min; Suh, Eun-Kyung; Kim, Myung Jong

    2016-01-01

    This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs. PMID:27387274

  5. The role of graphene formed on silver nanowire transparent conductive electrode in ultra-violet light emitting diodes

    NASA Astrophysics Data System (ADS)

    Seo, Tae Hoon; Lee, Seula; Min, Kyung Hyun; Chandramohan, S.; Park, Ah Hyun; Lee, Gun Hee; Park, Min; Suh, Eun-Kyung; Kim, Myung Jong

    2016-07-01

    This paper reports a highly reliable transparent conductive electrode (TCE) that integrates silver nanowires (AgNWs) and high-quality graphene as a protecting layer. Graphene with minimized defects and large graphene domains has been successfully obtained through a facile two-step growth approach. Ultraviolet light emitting diodes (UV-LEDs) were fabricated with AgNWs or hybrid electrodes where AgNWs were combined with two-step grown graphene (A-2GE) or conventional one-step grown graphene (A-1GE). The device performance and reliability of the UV-LEDs with three different electrodes were compared. The A-2GE offered high figure of merit owing to the excellent UV transmittance and reduced sheet resistance. As a consequence, the UV-LEDs made with A-2GE demonstrated reduced forward voltage, enhanced electroluminescence (EL) intensity, and alleviated efficiency droop. The effects of joule heating and UV light illumination on the electrode stability were also studied. The present findings prove superior performance of the A-2GE under high current injection and continuous operation of UV LED, compared to other electrodes. From our observation, the A-2GE would be a reliable TCE for high power UV-LEDs.

  6. Pink light emitting long-lasting phosphorescence in Sm 3+-doped CdSiO 3

    NASA Astrophysics Data System (ADS)

    Lei, Bingfu; Liu, Yingliang; Liu, Jie; Ye, Zeren; Shi, Chunshan

    2004-04-01

    Novel pink light emitting long-lasting afterglow CdSiO 3:Sm 3+ phosphors are prepared by the conventional high-temperature solid-state method and their luminescent properties are investigated. XRD and photoluminescence (PL) spectra are used to characterize the synthesized phosphors. The phosphors are well crystallized by calcinations at 1050°C for 5 h. These phosphors emit pink light and show long-lasting phosphorescence after they are excited with 254 nm ultraviolet light. The phosphorescence lasts for nearly 5 h in the light perception of the dark-adapted human eye (0.32 mcd/m 2). The phosphorescence mechanism is also investigated. All the results indicate that these phosphors have promising potential practical applications.

  7. Suppression of electron overflow in 370-nm InGaN/AlGaN ultraviolet light emitting diodes with different insertion layer thicknesses

    NASA Astrophysics Data System (ADS)

    Wang, C. K.; Wang, Y. W.; Chiou, Y. Z.; Chang, S. H.; Jheng, J. S.; Chang, S. P.; Chang, S. J.

    2017-06-01

    In this study, the properties of 370-nm InGaN/AlGaN ultraviolet light emitting diodes (UV LEDs) with different thicknesses of un-doped Al0.3Ga0.7N insertion layer (IL) between the last quantum barrier and electron blocking layer (EBL) have been numerically simulated by Advance Physical Model of Semiconductor Devices (APSYS). The results show that the LEDs using the high Al composition IL can effectively improve the efficiency droop, light output power, and internal quantum efficiency (IQE) compared to the original structure. The improvements of the optical properties are mainly attributed to the energy band discontinuity and offset created by IL, which increase the potential barrier height of conduction band to suppress the electron overflow from the active region to the p-side layer.

  8. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    PubMed Central

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-01-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency. PMID:26935402

  9. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: Preferential outcoupling of strong in-plane emission

    NASA Astrophysics Data System (ADS)

    Lee, Jong Won; Kim, Dong Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Lee, Jinsub; Kim, Yong-Il; Park, Youngsoo; Kim, Jong Kyu

    2016-03-01

    While there is an urgent need for semiconductor-based efficient deep ultraviolet (DUV) sources, the efficiency of AlGaN DUV light-emitting diodes (LEDs) remains very low because the extraction of DUV photons is significantly limited by intrinsic material properties of AlGaN. Here, we present an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes for maximizing the power conversion efficiency.

  10. Ultraviolet Source For Testing Hydrogen-Fire Detectors

    NASA Technical Reports Server (NTRS)

    Hall, Gregory A.; Larson, William E.; Youngquist, Robert C.; Moerk, John S.; Haskell, William D.; Cox, Robert B.; Polk, Jimmy D.; Stout, Stephen J.; Strobel, James P.

    1995-01-01

    Hand-held portable unit emits ultraviolet light similar to that emitted by hydrogen burning in air. Developed for use in testing optoelectronic hydrogen-fire detectors, which respond to ultraviolet light at wavelengths from 180 to 240 nanometers. Wavelength range unique in that within it, hydrogen fires emit small but detectable amounts of radiation, light from incandescent lamps and Sun almost completely absent, and air sufficiently transmissive to enable detection of hydrogen fire from distance. Consequently, this spectral region favorable for detecting hydrogen fires while minimizing false alarms.

  11. Enhanced wall-plug efficiency in AlGaN-based deep-ultraviolet light-emitting diodes with uniform current spreading p-electrode structures

    NASA Astrophysics Data System (ADS)

    Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

    2016-06-01

    The current crowding is an especially severe issue in AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) because of the low conductivity of the n-AlGaN cladding layer that has a high Al fraction. We theoretically investigated the improvement in internal quantum efficiency and total resistances in DUV-LEDs with an emission wavelength of 265 nm by a well-designed p-electrode geometry to produce uniform current spreading. As a result, the wall-plug efficiency was enhanced by a factor of 60% at an injection current of 350 mA in the designed uniform-current-spreading p-electrode LED when compared with an LED with a conventional cross-bar p-electrode pattern.

  12. Recording of individual identification information on dental prostheses using fluorescent material and ultraviolet light.

    PubMed

    Naito, Yoshihito; Meinar, Ashrin N; Iwawaki, Yuki; Kashiwabara, Toshiya; Goto, Takaharu; Ito, Teruaki; Sakuma, Tetsuro; Ichikawa, Tetsuo

    2013-01-01

    The placement of individual identification on a prosthesis is very important for forensic dentistry and traceability. This article describes the unique naming/labeling of dentures with information for individual identification using a method in which information is invisible under natural light but visible under ultraviolet light-emitting diode/black light exposure. The use of laser beam machining with this method will enable the recording of a large amount of information.

  13. Use of coupled wavelength ultraviolet light-emitting diodes for inactivation of bacteria in subsea oil-field injection water.

    PubMed

    Qiao, Yang; Chen, Daoyi; Wen, Diya

    2018-06-04

    The development of subsea injection water disinfection systems will enable the novel exploration of offshore oilfields. Ultraviolet light emitting diodes (UV-LEDs) with peak wavelengths at 255 nm, 280 nm, 350 nm, and combinations of 255 nm and 350 nm, and 280 nm and 350 nm were investigated in this study to determine their efficiency at disinfecting saprophytic bacteria, iron bacteria, and sulfate reducing bacteria. Results show that UV-LEDs with peak wavelengths at 280 nm were the most practical in this domain because of their high performance in both energy-efficiency and reactivation suppression, although 255 nm UV-LEDs achieved an optimal germicidal effect in dose-based experiments. The use of combined 280 nm and 350 nm wavelengths also induced synergistic bactericidal effects on saprophytic bacteria. Copyright © 2018. Published by Elsevier B.V.

  14. Comparative experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet flip-chip and top-emitting LEDs

    NASA Astrophysics Data System (ADS)

    Liu, Mengling; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Ding, Xinghuo

    2018-03-01

    Experimental and simulation studies of high-power AlGaN-based 353 nm ultraviolet (UV) flip-chip (FC) and top-emitting (TE) light-emitting diodes (LEDs) are performed here. To improve the optical and electrical properties of ultraviolet LEDs, we fabricate high-power FC-UV LEDs with Ta2O5/SiO2 distributed Bragg reflectors (DBRs) and a strip-shaped SiO2 current blocking layer (CBL). The reflectance of fourteen pairs of Ta2O5/SiO2 DBRs is 96.4% at 353 nm. The strip-shaped SiO2 CBL underneath the strip-shaped p-electrode can prevent the current concentrating in regions immediately adjacent to the p-electrode where the overlying opaque p-electrode metal layer absorbs the emitted UV light. Moreover, two-level metallization electrodes are used to improve current spreading. Our numerical results show that FC-UV LED has a more favorable current spreading uniformity than TE-UV LED. The light output power of 353 nm FC-UV LED was 23.22 mW at 350 mA, which is 24.7% higher than that of TE-UV LED.

  15. An AlGaN Core-Shell Tunnel Junction Nanowire Light-Emitting Diode Operating in the Ultraviolet-C Band.

    PubMed

    Sadaf, S M; Zhao, S; Wu, Y; Ra, Y-H; Liu, X; Vanka, S; Mi, Z

    2017-02-08

    To date, semiconductor light emitting diodes (LEDs) operating in the deep ultraviolet (UV) spectral range exhibit very low efficiency due to the presence of large densities of defects and extremely inefficient p-type conduction of conventional AlGaN quantum well heterostructures. We have demonstrated that such critical issues can be potentially addressed by using nearly defect-free AlGaN tunnel junction core-shell nanowire heterostructures. The core-shell nanowire arrays exhibit high photoluminescence efficiency (∼80%) in the UV-C band at room temperature. With the incorporation of an epitaxial Al tunnel junction, the p-(Al)GaN contact-free nanowire deep UV LEDs showed nearly one order of magnitude reduction in the device resistance, compared to the conventional nanowire p-i-n device. The unpackaged Al tunnel junction deep UV LEDs exhibit an output power >8 mW and a peak external quantum efficiency ∼0.4%, which are nearly one to two orders of magnitude higher than previously reported AlGaN nanowire devices. Detailed studies further suggest that the maximum achievable efficiency is limited by electron overflow and poor light extraction efficiency due to the TM polarized emission.

  16. Reverse leakage current characteristics of InGaN/GaN multiple quantum well ultraviolet/blue/green light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhou, Shengjun; Lv, Jiajiang; Wu, Yini; Zhang, Yuan; Zheng, Chenju; Liu, Sheng

    2018-05-01

    We investigated the reverse leakage current characteristics of InGaN/GaN multiple quantum well (MQW) near-ultraviolet (NUV)/blue/green light-emitting diodes (LEDs). Experimental results showed that the NUV LED has the smallest reverse leakage current whereas the green LED has the largest. The reason is that the number of defects increases with increasing nominal indium content in InGaN/GaN MQWs. The mechanism of the reverse leakage current was analyzed by temperature-dependent current–voltage measurement and capacitance–voltage measurement. The reverse leakage currents of NUV/blue/green LEDs show similar conduction mechanisms: at low temperatures, the reverse leakage current of these LEDs is attributed to variable-range hopping (VRH) conduction; at high temperatures, the reverse leakage current of these LEDs is attributed to nearest-neighbor hopping (NNH) conduction, which is enhanced by the Poole–Frenkel effect.

  17. Radiation-damage-induced phasing: a case study using UV irradiation with light-emitting diodes.

    PubMed

    de Sanctis, Daniele; Zubieta, Chloe; Felisaz, Franck; Caserotto, Hugo; Nanao, Max H

    2016-03-01

    Exposure to X-rays, high-intensity visible light or ultraviolet radiation results in alterations to protein structure such as the breakage of disulfide bonds, the loss of electron density at electron-rich centres and the movement of side chains. These specific changes can be exploited in order to obtain phase information. Here, a case study using insulin to illustrate each step of the radiation-damage-induced phasing (RIP) method is presented. Unlike a traditional X-ray-induced damage step, specific damage is introduced via ultraviolet light-emitting diodes (UV-LEDs). In contrast to UV lasers, UV-LEDs have the advantages of small size, low cost and relative ease of use.

  18. White light-emitting organic electroluminescent devices

    DOEpatents

    Shiang, Joseph John; Duggal, Anil Raj; Parthasarathy, Gautam

    2006-06-20

    A light-emitting device comprises a light-emitting member, which comprises two electrodes, at least two organic electroluminescent ("EL") materials disposed between the electrodes, a charge blocking material disposed between the electrodes, and at least one photoluminescent ("PL") material. The light-emitting member emits electromagnetic ("EM") radiation having a first spectrum in response to a voltage applied across the two electrodes. The PL material absorbs a portion of the EM radiation emitted by the light-emitting member and emits EM radiation having second spectrum different than the first spectrum. Each of the organic EL materials emits EM radiation having a wavelength range selected from the group consisting of blue and red wavelength ranges.

  19. Transmitting and reflecting diffuser. [for ultraviolet light

    NASA Technical Reports Server (NTRS)

    Keafer, L. S., Jr.; Burcher, E. E.; Kopia, L. P. (Inventor)

    1973-01-01

    A near-Lambertian diffuser is described which transmits and reflects ultraviolet light. An ultraviolet grade fused silica substrate is coated with vaporized fuse silica. The coating thickness is controlled, one thickness causing ultraviolet light to diffuse and another thickness causing ultraviolet light to reflect a near Lambertian pattern.

  20. Ultraviolet light emitting diodes and bio-aerosol sensing

    NASA Astrophysics Data System (ADS)

    Davitt, Kristina M.

    Recent interest in compact ultraviolet (UV) light emitters has produced advances in material quality and device performance from aluminum-rich alloys of the nitride semiconductor system. The epitaxial growth of device structures from this material poses remarkable challenges, and state-of-the-art in semiconductor UV light sources at wavelengths shorter than 350 nm is currently limited to LEDs. A portion of the work presented in this thesis involves the design and characterization of UV LED structures, with particular focus on sub-300 nm LEDs which have only been demonstrated within the last four years. Emphasis has been placed on the integration of early devices with modest efficiencies and output powers into a practical, fluorescence-based bio-sensing instrument. The quality of AlGaInN and AlGaN-based materials is characterized by way of the performance of 340 nm and 290 nm LEDs respectively. A competitive level of device operation is achieved, although much room remains for improvement in the efficiency of light emission from this material system. A preliminary investigation of 300 nm LEDs grown on bulk AIN shows promising electrical and optical characteristics, and illustrates the numerous advantages that this native substrate offers to the epitaxy of wide bandgap nitride semiconductors. The application of UV LEDs to the field of bio-aerosol sensing is pursued by constructing an on-the-fly fluorescence detection system. A linear array of UV LEDs is designed and implemented, and the capability of test devices to excite native fluorescence from bacterial spores is established. In order to fully capitalize on the reduction in size afforded by LEDs, effort is invested in re-engineering the remaining sensor components. Operation of a prototype system for physically sorting bio-aerosols based on fluorescence spectra acquired in real-time from single airborne particles excited by a UV-LED array is demonstrated using the bio-fluorophores NADH and tryptophan. Sensor

  1. Enhancing the light-extraction efficiency of AlGaN deep-ultraviolet light-emitting diodes using highly reflective Ni/Mg and Rh as p-type electrodes

    NASA Astrophysics Data System (ADS)

    Maeda, Noritoshi; Yun, Joosun; Jo, Masafumi; Hirayama, Hideki

    2018-04-01

    Improving the light-extraction efficiency (LEE) is a major issue for the development of deep-ultraviolet (DUV) light-emitting diodes (LEDs). For this improvement, we introduced a transparent p-AlGaN contact layer and a reflective p-type electrode. In this work, we investigated the improvements obtained by replacing conventional Ni/Au p-type electrodes with highly reflective Ni/Mg and Rh electrodes. The external quantum efficiencies (EQEs) of 279 nm DUV LEDs were increased from 4.2 to 6.6% and from 3.4 to 4.5% by introducing Ni/Mg and Rh p-type electrodes, respectively. The LEE enhancement factors for the Ni/Mg and Rh electrodes were 1.6 and 1.4, respectively. These results are explained by the fact that the measured reflectances of the Ni/Mg and Rh electrodes were approximately 80 and 55%, respectively. Moreover, it was concluded that a passivation layer is required for Ni/Mg electrodes to prevent the degradation of the LED properties by the oxidation of Mg.

  2. ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

    NASA Astrophysics Data System (ADS)

    Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

    2012-07-01

    We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.

  3. Modularized and water-cooled photo-catalyst cleaning devices for aquaponics based on ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Yang, Henglong; Lung, Louis; Wei, Yu-Chien; Huang, Yi-Bo; Chen, Zi-Yu; Chou, Yu-Yang; Lin, Anne-Chin

    2017-08-01

    The feasibility of applying ultraviolet light-emitting diodes (UV-LED's) as triggering sources of photo-catalyst based on titanium dioxide (TiO2) nano-coating specifically for water-cleaning process in an aquaponics system was designed and proposed. The aquaponics system is a modern farming system to integrate aquaculture and hydroponics into a single system to establish an environmental-friendly and lower-cost method for farming fish and vegetable all together in urban area. Water treatment in an aquaponics system is crucial to avoid mutual contamination. we proposed a modularized watercleaning device composed of all commercially available components and parts to eliminate organic contaminants by using UV-LED's for TiO2 photo-catalyst reaction. This water-cleaning module consisted of two coaxial hollowed cylindrical pipes can be submerged completely in water for water treatment and cooling UV-LED's. The temperature of the UV-LED after proper thermal management can be reduced about 16% to maintain the optimal operation condition. Our preliminary experimental result by using Methylene Blue solution to simulate organic contaminants indicated that TiO2 photo-catalyst triggered by UV-LED's can effectively decompose organic compound and decolor Methylene Blue solution.

  4. Effects of Mg-doped AlN/AlGaN superlattices on properties of p-GaN contact layer and performance of deep ultraviolet light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Al tahtamouni, T. M., E-mail: talal@yu.edu.jo; Lin, J. Y.; Jiang, H. X.

    2014-04-15

    Mg-doped AlN/AlGaN superlattice (Mg-SL) and Mg-doped AlGaN epilayers have been investigated in the 284 nm deep ultraviolet (DUV) light emitting diodes (LEDs) as electron blocking layers. It was found that the use of Mg-SL improved the material quality of the p-GaN contact layer, as evidenced in the decreased density of surface pits and improved surface morphology and crystalline quality. The performance of the DUV LEDs fabricated using Mg-SL was significantly improved, as manifested by enhanced light intensity and output power, and reduced turn-on voltage. The improved performance is attributed to the enhanced blocking of electron overflow, and enhanced hole injection.

  5. Synthesis and photoluminescence properties of a cyan-emitting phosphor Ca3(PO4)2:Eu2+ for white light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhou, Wenli; Han, Jin; Zhang, Xuejie; Qiu, Zhongxian; Xie, Qingji; Liang, Hongbin; Lian, Shixun; Wang, Jing

    2015-01-01

    In this paper, a cyan-emitting phosphor Ca3(PO4)2:Eu2+ (TCP:Eu2+) was synthesized and evaluated as a candidate for white light emitting diodes (WLEDs). This phosphor shows strong and broad absorption in 250-450 nm region, but the emission spectrum is prominent at around 480 nm. The emission intensity of the TCP:Eu2+ was found to be 60% and 82% of that of the commercial BaMgAl10O17:Eu2+ (BAM) under excitation at 340 nm and 370 nm, respectively. Upon excitation at 370 nm, the absolute internal and external quantum efficiencies of the Ca3(PO4)2:1.5%Eu2+ are 60% and 42%, respectively. Moreover, a white LED lamp was fabricated by coating TCP:Eu2+ with a blue-emitting BAM and a red-emitting CaAlSiN3:Eu2+ on a near-ultraviolet (375 nm) LED chip, driven by a 350 mA forward bias current, and it produces an intense white light with a color rendering index of 75.

  6. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency

    NASA Astrophysics Data System (ADS)

    Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

    2018-04-01

    This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

  7. Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

    PubMed

    Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

    2015-10-01

    The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

  8. Organic light emitting diode with light extracting electrode

    DOEpatents

    Bhandari, Abhinav; Buhay, Harry

    2017-04-18

    An organic light emitting diode (10) includes a substrate (20), a first electrode (12), an emissive active stack (14), and a second electrode (18). At least one of the first and second electrodes (12, 18) is a light extracting electrode (26) having a metallic layer (28). The metallic layer (28) includes light scattering features (29) on and/or in the metallic layer (28). The light extracting features (29) increase light extraction from the organic light emitting diode (10).

  9. Frequency-Downconversion Stability of PMMA Coatings in Hybrid White Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Caruso, Fulvio; Mosca, Mauro; Rinella, Salvatore; Macaluso, Roberto; Calì, Claudio; Saiano, Filippo; Feltin, Eric

    2016-01-01

    We report on the properties of a poly(methyl methacrylate)-based coating used as a host for an organic dye in hybrid white light-emitting diodes. The device is composed by a pump source, which is a standard inorganic GaN/InGaN blue light-emitting diode (LED) emitting at around 450 nm, and a spin-coated conversion layer making use of Lumogen® F Yellow 083. Under prolonged irradiation, the coating exhibits significant bleaching, thus degrading the color rendering performance of the LED. We present experimental results that confirm that the local temperature rise of the operating diode does not affect the conversion layer. It is also proven that, during the test, the photostability of the organic dye is compromised, resulting in a chromatic shift from Commission Internationale de l'Eclairage (CIE) ( x; y) coordinates (0.30;0.39) towards the color of the pump (0.15;0.04). Besides photodegradation of the dye, we address a phenomenon attributed to modification of the polymer matrix activated by the LED's blue light energy as confirmed by ultraviolet-visible and Fourier-transform infrared spectroscopic analyses. Three methods for improving the overall stability of the organic coating are presented.

  10. Protocol for Determining Ultraviolet Light Emitting Diode (UV-LED) Fluence for Microbial Inactivation Studies.

    PubMed

    Kheyrandish, Ataollah; Mohseni, Madjid; Taghipour, Fariborz

    2018-06-15

    Determining fluence is essential to derive the inactivation kinetics of microorganisms and to design ultraviolet (UV) reactors for water disinfection. UV light emitting diodes (UV-LEDs) are emerging UV sources with various advantages compared to conventional UV lamps. Unlike conventional mercury lamps, no standard method is available to determine the average fluence of the UV-LEDs, and conventional methods used to determine the fluence for UV mercury lamps are not applicable to UV-LEDs due to the relatively low power output, polychromatic wavelength, and specific radiation profile of UV-LEDs. In this study, a method was developed to determine the average fluence inside a water suspension in a UV-LED experimental setup. In this method, the average fluence was estimated by measuring the irradiance at a few points for a collimated and uniform radiation on a Petri dish surface. New correction parameters were defined and proposed, and several of the existing parameters for determining the fluence of the UV mercury lamp apparatus were revised to measure and quantify the collimation and uniformity of the radiation. To study the effect of polychromatic output and radiation profile of the UV-LEDs, two UV-LEDs with peak wavelengths of 262 and 275 nm and different radiation profiles were selected as the representatives of typical UV-LEDs applied to microbial inactivation. The proper setup configuration for microorganism inactivation studies was also determined based on the defined correction factors.

  11. Bluish-green color emitting Ba2Si3O8:Eu2+ ceramic phosphors for white light-emitting diodes.

    PubMed

    Xiao, F; Xue, Y N; Zhang, Q Y

    2009-10-15

    This paper reports on the structural and optical properties of Eu(2+) activated Ba(2)Si(3)O(8) ceramic phosphors synthesized by a sol-gel method. The ceramic phosphors have been characterized by X-ray diffraction (XRD), field-emission scanning electron microscopy (FESEM) and fluorescence measurements. The structural characterization results suggest that the as-prepared phosphors are of single phase monoclinic Ba(2)Si(3)O(8) with rod-like morphology. A broad excitation band ranging from 300 to 410 nm matches well with the ultraviolet (UV) radiation of light-emitting diodes (LEDs). Upon 380 nm UV light excitation, these phosphors emit bluish-green emission centered at 500 nm with color coordination (x=0.25, y=0.40). All the obtained results indicate that the Ba(2)Si(3)O(8):Eu(2+) ceramic phosphors are promising bluish-green candidates for the phosphor-converted white LEDs.

  12. Light emitting ceramic device

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker, Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2010-05-18

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, is herein claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  13. Scatter Measurements Made With Ultraviolet Light

    NASA Astrophysics Data System (ADS)

    Anthon, Erik W.

    1985-09-01

    The quality of optical surfaces is generally evaluated by how much light (normally visible light) is scattered by the surface. Most optical glasses and many coating materials are completely opaque to ultraviolet light (253.7 nm). Ultraviolet light tends to scatter much more than visible light. Scatter measurements made with ultraviolet light are therefore very sensitive and the scatter from second surfaces and from the interior (bulk) of the optical material is eliminated by the opacity. A novel scattermeter that operates with ultraviolet light has been developed. The construction and operation of this scattermeter will be described. Cleaning soon becomes the limiting factor when measuring the surfaces with very low level of scatter. Sensitivity to repeated cleaning has been investigated. Different surfaces are compared and uniformity of surfaces is measured by mapping a surface area with an x-y stage. Polished glass surfaces generally have much higher scatter than natural glass surfaces (fire polished, drawn or floated surfaces). Very low scatter levels have been found on thin drawn glass.

  14. Nearly Efficiency-Droop-Free AlGaN-Based Ultraviolet Light-Emitting Diodes with a Specifically Designed Superlattice p-Type Electron Blocking Layer for High Mg Doping Efficiency.

    PubMed

    Zhang, Zi-Hui; Huang Chen, Sung-Wen; Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Bi, Wengang; Kuo, Hao-Chung

    2018-04-24

    This work reports a nearly efficiency-droop-free AlGaN-based deep ultraviolet light-emitting diode (DUV LED) emitting in the peak wavelength of 270 nm. The DUV LED utilizes a specifically designed superlattice p-type electron blocking layer (p-EBL). The superlattice p-EBL enables a high hole concentration in the p-EBL which correspondingly increases the hole injection efficiency into the multiple quantum wells (MQWs). The enhanced hole concentration within the MQW region can more efficiently recombine with electrons in the way of favoring the radiative recombination, leading to a reduced electron leakage current level. As a result, the external quantum efficiency for the proposed DUV LED structure is increased by 100% and the nearly efficiency-droop-free DUV LED structure is obtained experimentally.

  15. Effects of GaN/AlGaN/Sputtered AlN nucleation layers on performance of GaN-based ultraviolet light-emitting diodes

    PubMed Central

    Hu, Hongpo; Zhou, Shengjun; Liu, Xingtong; Gao, Yilin; Gui, Chengqun; Liu, Sheng

    2017-01-01

    We report on the demonstration of GaN-based ultraviolet light-emitting diodes (UV LEDs) emitting at 375 nm grown on patterned sapphire substrate (PSS) with in-situ low temperature GaN/AlGaN nucleation layers (NLs) and ex-situ sputtered AlN NL. The threading dislocation (TD) densities in GaN-based UV LEDs with GaN/AlGaN/sputtered AlN NLs were determined by high-resolution X-ray diffraction (XRD) and cross-sectional transmission electron microscopy (TEM), which revealed that the TD density in UV LED with AlGaN NL was the highest, whereas that in UV LED with sputtered AlN NL was the lowest. The light output power (LOP) of UV LED with AlGaN NL was 18.2% higher than that of UV LED with GaN NL owing to a decrease in the absorption of 375 nm UV light in the AlGaN NL with a larger bandgap. Using a sputtered AlN NL instead of the AlGaN NL, the LOP of UV LED was further enhanced by 11.3%, which is attributed to reduced TD density in InGaN/AlInGaN active region. In the sputtered AlN thickness range of 10–25 nm, the LOP of UV LED with 15-nm-thick sputtered AlN NL was the highest, revealing that optimum thickness of the sputtered AlN NL is around 15 nm. PMID:28294166

  16. Multilayer white lighting polymer light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Gong, Xiong; Wang, Shu; Heeger, Alan J.

    2006-08-01

    Organic and polymer light-emitting diodes (OLEDs/PLEDs) that emit white light are of interest and potential importance for use in active matrix displays (with color filters) and because they might eventually be used for solid-state lighting. In such applications, large-area devices and low-cost of manufacturing will be major issues. We demonstrated that high performance multilayer white emitting PLEDs can be fabricated by using a blend of luminescent semiconducting polymers and organometallic complexes as the emission layer, and water-soluble (or ethanol-soluble) polymers/small molecules (for example, PVK-SO 3Li) as the hole injection/transport layer (HIL/HTL) and water-soluble (or ethanol-soluble) polymers/small molecules (for example, t-Bu-PBD-SO 3Na) as the electron injection/transport layer (EIL/HTL). Each layer is spin-cast sequentially from solutions. Illumination quality light is obtained with stable Commission Internationale d'Eclairage coordinates, stable color temperatures, and stable high color rendering indices, all close to those of "pure" white. The multilayer white-emitting PLEDs exhibit luminous efficiency of 21 cd/A, power efficiency of 6 lm/W at a current density of 23 mA/cm2 with luminance of 5.5 x 10 4 cd/m2 at 16 V. By using water-soluble (ethanol-soluble) polymers/small molecules as HIL/HTL and polymers/small molecules as EIL/ETL, the interfacial mixing problem is solved (the emissive polymer layer is soluble in organic solvents, but not in water/ ethanol). As a result, this device architecture and process technology can potentially be used for printing large-area multiplayer light sources and for other applications in "plastic" electronics. More important, the promise of producing large areas of high quality white light with low-cost manufacturing technology makes the white multilayer white-emitting PLEDs attractive for the development of solid state light sources.

  17. Efficient semiconductor light-emitting device and method

    DOEpatents

    Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

    1996-01-01

    A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

  18. Efficient semiconductor light-emitting device and method

    DOEpatents

    Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

    1996-02-20

    A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

  19. Ultraviolet electroluminescence from nitrogen-doped ZnO-based heterojuntion light-emitting diodes prepared by remote plasma in situ atomic layer-doping technique.

    PubMed

    Chien, Jui-Fen; Liao, Hua-Yang; Yu, Sheng-Fu; Lin, Ray-Ming; Shiojiri, Makoto; Shyue, Jing-Jong; Chen, Miin-Jang

    2013-01-23

    Remote plasma in situ atomic layer doping technique was applied to prepare an n-type nitrogen-doped ZnO (n-ZnO:N) layer upon p-type magnesium-doped GaN (p-GaN:Mg) to fabricate the n-ZnO:N/p-GaN:Mg heterojuntion light-emitting diodes. The room-temperature electroluminescence exhibits a dominant ultraviolet peak at λ ≈ 370 nm from ZnO band-edge emission and suppressed luminescence from GaN, as a result of the decrease in electron concentration in ZnO and reduced electron injection from n-ZnO:N to p-GaN:Mg because of the nitrogen incorporation. The result indicates that the in situ atomic layer doping technique is an effective approach to tailoring the electrical properties of materials in device applications.

  20. Deep ultraviolet semiconductor light sources for sensing and security

    NASA Astrophysics Data System (ADS)

    Shatalov, Max; Bilenko, Yuri; Yang, Jinwei; Gaska, Remis

    2009-09-01

    III-Nitride based deep ultraviolet (DUV) light emitting diodes (LEDs) rapidly penetrate into sensing market owing to several advantages over traditional UV sources (i.e. mercury, xenon and deuterium lamps). Small size, a wide choice of peak emission wavelengths, lower power consumption and reduced cost offer flexibility to system integrators. Short emission wavelength offer advantages for gas detection and optical sensing systems based on UV induced fluorescence. Large modulation bandwidth for these devices makes them attractive for frequency-domain spectroscopy. We will review present status of DUV LED technology and discuss recent advances in short wavelength emitters and high power LED lamps.

  1. Light-Emitting Pickles

    ERIC Educational Resources Information Center

    Vollmer, M.; Mollmann, K-P.

    2015-01-01

    We present experiments giving new insights into the classical light-emitting pickle experiment. In particular, measurements of the spectra and temperatures, as well as high-speed recordings, reveal that light emission is connected to the polarity of the electrodes and the presence of hydrogen.

  2. Applications of Light Emitting Diodes in Health Care.

    PubMed

    Dong, Jianfei; Xiong, Daxi

    2017-11-01

    Light emitting diodes (LEDs) have become the main light sources for general lighting, due to their high lumen efficiency and long life time. Moreover, their high bandwidth and the availability of diverse wavelength contents ranging from ultraviolet to infrared empower them with great controllability in tuning brightness, pulse durations and spectra. These parameters are the essential ingredients of the applications in medical imaging and therapies. Despite the fast advances in both LED technologies and their applications, few reviews have been seen to link the controllable emission properties of LEDs to these applications. The objective of this paper is to bridge this gap by reviewing the main control techniques of LEDs that enable creating enhanced lighting patterns for imaging and generating effective photon doses for photobiomodulation. This paper also provides the basic mechanisms behind the effective LED therapies in treating cutaneous and neurological diseases. The emerging field of optogenetics is also discussed with a focus on the application of LEDs. The multidisciplinary topics reviewed in this paper can help the researchers in LEDs, imaging, light therapy and optogenetics better understand the basic principles in each other's field; and hence to stimulate the application of LEDs in health care.

  3. Light collection optics for measuring flux and spectrum from light-emitting devices

    DOEpatents

    McCord, Mark A.; DiRegolo, Joseph A.; Gluszczak, Michael R.

    2016-05-24

    Systems and methods for accurately measuring the luminous flux and color (spectra) from light-emitting devices are disclosed. An integrating sphere may be utilized to directly receive a first portion of light emitted by a light-emitting device through an opening defined on the integrating sphere. A light collector may be utilized to collect a second portion of light emitted by the light-emitting device and direct the second portion of light into the integrating sphere through the opening defined on the integrating sphere. A spectrometer may be utilized to measure at least one property of the first portion and the second portion of light received by the integrating sphere.

  4. Light emitting fabric technologies for photodynamic therapy.

    PubMed

    Mordon, Serge; Cochrane, Cédric; Tylcz, Jean Baptiste; Betrouni, Nacim; Mortier, Laurent; Koncar, Vladan

    2015-03-01

    Photodynamic therapy (PDT) is considered to be a promising method for treating various types of cancer. A homogeneous and reproducible illumination during clinical PDT plays a determinant role in preventing under- or over-treatment. The development of flexible light sources would considerably improve the homogeneity of light delivery. The integration of optical fiber into flexible structures could offer an interesting alternative. This paper aims to describe different methods proposed to develop Side Emitting Optical Fibers (SEOF), and how these SEOF can be integrated in a flexible structure to improve light illumination of the skin during PDT. Four main techniques can be described: (i) light blanket integrating side-glowing optical fibers, (ii) light emitting panel composed of SEOF obtained by micro-perforations of the cladding, (iii) embroidery-based light emitting fabric, and (iv) woven-based light emitting fabric. Woven-based light emitting fabrics give the best performances: higher fluence rate, best homogeneity of light delivery, good flexibility. Copyright © 2014 Elsevier B.V. All rights reserved.

  5. Transparent conductive oxide films mixed with gallium oxide nanoparticle/single-walled carbon nanotube layer for deep ultraviolet light-emitting diodes

    PubMed Central

    2013-01-01

    We propose a transparent conductive oxide electrode scheme of gallium oxide nanoparticle mixed with a single-walled carbon nanotube (Ga2O3 NP/SWNT) layer for deep ultraviolet light-emitting diodes using spin and dipping methods. We investigated the electrical, optical and morphological properties of the Ga2O3 NP/SWNT layers by increasing the thickness of SWNTs via multiple dipping processes. Compared with the undoped Ga2O3 films (current level 9.9 × 10-9 A @ 1 V, transmittance 68% @ 280 nm), the current level flowing in the Ga2O3 NP/SWNT increased by approximately 4 × 105 times and the transmittance improved by 9% after 15 times dip-coating (current level 4 × 10-4 A at 1 V; transmittance 77.0% at 280 nm). These improvements result from both native high transparency of Ga2O3 NPs and high conductivity and effective current spreading of SWNTs. PMID:24295342

  6. A route to improved extraction efficiency of light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhu, H.; Shan, C. X.; Wang, L. K.; Yang, Y.; Zhang, J. Y.; Yao, B.; Shen, D. Z.; Fan, X. W.

    2010-01-01

    The electroluminescence from an n-MgZnO/i-ZnO/MgO/p-GaN asymmetric double heterojunction has been demonstrated. With the injection of electrons from n-MgZnO and holes from p-GaN, an intense ultraviolet emission coming from the ZnO active layer was observed. It is revealed that the emission intensity of the diode recorded from the MgZnO side is significantly larger than that from the MgO side because of the asymmetric waveguide structure formed by the lower refractive index of MgO than that of MgZnO. The asymmetric waveguide structure reported in this letter may promise a simple and effective route to light-emitting diodes with improved light-extraction efficiency.

  7. Ultraviolet light-an FDA approved technology

    USDA-ARS?s Scientific Manuscript database

    Ultraviolet Light (254 nm) is a U.S. Food and Drug Administration approved nonthermal intervention technology that can be used for decontamination of food and food contact surfaces. Ultraviolet light is a green technology that leaves no chemical residues. Results from our laboratory indicate that ex...

  8. Improving the light-emitting properties of single-layered polyfluorene light-emitting devices by simple ionic liquid blending

    NASA Astrophysics Data System (ADS)

    Horike, Shohei; Nagaki, Hiroto; Misaki, Masahiro; Koshiba, Yasuko; Morimoto, Masahiro; Fukushima, Tatsuya; Ishida, Kenji

    2018-03-01

    This paper describes an evaluation of ionic liquids (ILs) as potential electrolytes for single-layered light-emitting devices with good emission performance. As optoelectronic devices continue to grow in abundance, high-performance light-emitting devices with a single emission layer are becoming increasingly important for low-cost production. We show that a simple technique of osmosing IL into the polymer layer can result in high luminous efficiency and good response times of single-layered light-emitting polymers, even without the additional stacking of charge carrier injection and transport layers. The IL contributions to the light-emission of the polymer are discussed from the perspectives of energy diagrams and of the electric double layers on the electrodes. Our findings enable a faster, cheaper, and lower-in-waste production of light-emitting devices.

  9. Light-emitting device with organic electroluminescent material and photoluminescent materials

    DOEpatents

    McNulty, Thomas Francis; Duggal, Anil Raj; Turner, Larry Gene; Shiang, Joseph John

    2005-06-07

    A light-emitting device comprises a light-emitting member, which comprises two electrodes and an organic electroluminescent material disposed between the electrodes, and at least one organic photoluminescent ("PL") material. The light-emitting member emits light having a first spectrum in response to a voltage applied across the two electrodes. The organic PL material absorbs a portion of the light emitted by the light-emitting member and emits light having second spectrum different than the first spectrum. The light-emitting device can include an inorganic PL material that absorbs another portion of the light emitted from the light-emitting member and emits light having a third spectrum different than both the first and the second spectra.

  10. High-luminosity blue and blue-green gallium nitride light-emitting diodes.

    PubMed

    Morkoç, H; Mohammad, S N

    1995-01-06

    Compact and efficient sources of blue light for full color display applications and lighting eluded and tantalized researchers for many years. Semiconductor light sources are attractive owing to their reliability and amenability to mass manufacture. However, large band gaps are required to achieve blue color. A class of compound semiconductors formed by metal nitrides, GaN and its allied compounds AIGaN and InGaN, exhibits properties well suited for not only blue and blue-green emitters, but also for ultraviolet emitters and detectors. What thwarted engineers and scientists from fabricating useful devices from these materials in the past was the poor quality of material and lack of p-type doping. Both of these obstacles have recently been overcome to the point where highluminosity blue and blue-green light-emitting diodes are now available in the marketplace.

  11. Instense red phosphors for UV light emitting diode devices.

    PubMed

    Cao, Fa-Bin; Tian, Yan-Wen; Chen, Yong-Jie; Xiao, Lin-Jiu; Liu, Yun-Yi

    2010-03-01

    Ca(x)Sr1-x-1.5y-0.5zMoO4:yEu3+ zNa+ red phosphors were prepared by solid-state reaction using Na+ as charge supply for LEDs (light emitting diodes). The content of charge compensator, Ca2+ concentration, synthesis temperature, reaction time, and Eu3+ concentration were the keys to improving the properties of luminescence and crystal structure of red phosphors. The photoluminescence spectra shows the red phosphors are effectively excited at 616 nm by 311 nm, 395 nm, and 465 nm light. The wavelengths of 395 and 465 nm nicely match the widely applied emission wavelengths of ultraviolet or blue LED chips. Its chromaticity coordinates (CIE) are calculated to be x = 0.65, y = 0.32. Bright red light can be observed by the naked eye from the LED-based Ca0.60Sr0.25MoO4:0.08Eu3+ 0.06Na+.

  12. Ultraviolet safety assessments of insect light traps.

    PubMed

    Sliney, David H; Gilbert, David W; Lyon, Terry

    2016-01-01

    Near-ultraviolet (UV-A: 315-400 nm), "black-light," electric lamps were invented in 1935 and ultraviolet insect light traps (ILTs) were introduced for use in agriculture around that time. Today ILTs are used indoors in several industries and in food-service as well as in outdoor settings. With recent interest in photobiological lamp safety, safety standards are being developed to test for potentially hazardous ultraviolet emissions. A variety of UV "Black-light" ILTs were measured at a range of distances to assess potential exposures. Realistic time-weighted human exposures are shown to be well below current guidelines for human exposure to ultraviolet radiation. These UV-A exposures would be far less than the typical UV-A exposure in the outdoor environment. Proposals are made for realistic ultraviolet safety standards for ILT products.

  13. Light emitting device having peripheral emissive region

    DOEpatents

    Forrest, Stephen R

    2013-05-28

    Light emitting devices are provided that include one or more OLEDs disposed only on a peripheral region of the substrate. An OLED may be disposed only on a peripheral region of a substantially transparent substrate and configured to emit light into the substrate. Another surface of the substrate may be roughened or include other features to outcouple light from the substrate. The edges of the substrate may be beveled and/or reflective. The area of the OLED(s) may be relatively small compared to the substrate surface area through which light is emitted from the device. One or more OLEDs also or alternatively may be disposed on an edge of the substrate about perpendicular to the surface of the substrate through which light is emitted, such that they emit light into the substrate. A mode expanding region may be included between each such OLED and the substrate.

  14. Effect of quantum-well thickness on the optical polarization of AlGaN-based ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Zhang, Jing

    2018-02-01

    Optical polarization from AlGaN quantum well (QW) is crucial for realizing high-efficiency deep-ultraviolet (UV) light-emitting diodes (LEDs) because it determines the light emission patterns and light extraction mechanism of the devices. As the Al-content of AlGaN QW increases, the valence bands order changes and consequently the light polarization switches from transverse-electric (TE) to transverse-magnetic (TM) owing to the different sign and the value of the crystal field splitting energy between AlN (-169meV) and GaN (10meV). Several groups have reported that the ordering of the bands and the TE/TM crossover Al-content could be influenced by the strain state and the quantum confinement from the AlGaN QW system. In this work, we investigate the influence of QW thickness on the optical polarization switching point from AlGaN QW with AlN barriers by using 6-band k•p model. The result presents a decreasing trend of the critical Al-content where the topmost valence band switches from heave hole (HH) to crystal field spilt-off (CH) with increasing QW thicknesses due to the internal electric field and the strain state from the AlGaN QW. Instead, the TE- and TM-polarized spontaneous emission rates switching Al-content rises first and falls later because of joint consequence of the band mixing effect and the Quantum Confined Stark Effect. The reported optical polarization from AlGaN QW emitters in the UV spectral range is assessed in this work and the tendency of the polarization switching point shows great consistency with the theoretical results, which deepens the understanding of the physics from AlGaN QW UV LEDs.

  15. Wheat Under LED's (Light Emitting Diodes)

    NASA Technical Reports Server (NTRS)

    2004-01-01

    Astroculture is a suite of technologies used to produce and maintain a closed controlled environment for plant growth. The two most recent missions supported growth of potato, dwarf wheat, and mustard plants, and provided scientists with the first opportunity to conduct true plant research in space. Light emitting diodes have particular usefulness for plant growth lighting because they emit a much smaller amount of radiant heat than do conventional lighting sources and because they have potential of directing a higher percentage of the emitted light onto plants surfaces. Furthermore, the high output LED's have emissions in the 600-700 nm waveband, which is of highest efficiency for photosynthesis by plants.

  16. Organic light emitting devices for illumination

    DOEpatents

    Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S.

    2010-02-16

    An organic light emitting device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient that an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

  17. Recent advances in conjugated polymers for light emitting devices.

    PubMed

    Alsalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review.

  18. Recent Advances in Conjugated Polymers for Light Emitting Devices

    PubMed Central

    AlSalhi, Mohamad Saleh; Alam, Javed; Dass, Lawrence Arockiasamy; Raja, Mohan

    2011-01-01

    A recent advance in the field of light emitting polymers has been the discovery of electroluminescent conjugated polymers, that is, kind of fluorescent polymers that emit light when excited by the flow of an electric current. These new generation fluorescent materials may now challenge the domination by inorganic semiconductor materials of the commercial market in light-emitting devices such as light-emitting diodes (LED) and polymer laser devices. This review provides information on unique properties of conjugated polymers and how they have been optimized to generate these properties. The review is organized in three sections focusing on the major advances in light emitting materials, recent literature survey and understanding the desirable properties as well as modern solid state lighting and displays. Recently, developed conjugated polymers are also functioning as roll-up displays for computers and mobile phones, flexible solar panels for power portable equipment as well as organic light emitting diodes in displays, in which television screens, luminous traffic, information signs, and light-emitting wallpaper in homes are also expected to broaden the use of conjugated polymers as light emitting polymers. The purpose of this review paper is to examine conjugated polymers in light emitting diodes (LEDs) in addition to organic solid state laser. Furthermore, since conjugated polymers have been approved as light-emitting organic materials similar to inorganic semiconductors, it is clear to motivate these organic light-emitting devices (OLEDs) and organic lasers for modern lighting in terms of energy saving ability. In addition, future aspects of conjugated polymers in LEDs were also highlighted in this review. PMID:21673938

  19. Organic light emitting devices for illumination

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hack, Michael; Lu, Min-Hao Michael; Weaver, Michael S

    An organic light emitting device an a method of obtaining illumination from such a device is provided. The device has a plurality of regions, each region having an organic emissive layer adapted to emit a different spectrum of light. The regions in combination emit light suitable for illumination purposes. The area of each region may be selected such that the device is more efficient than an otherwise equivalent device having regions of equal size. The regions may have an aspect ratio of at least about four. All parts of any given region may be driven at the same current.

  20. Comparative and quantitative analysis of white light-emitting diodes and other lamps used for home illumination

    NASA Astrophysics Data System (ADS)

    Rubinger, Rero Marques; da Silva, Edna Raimunda; Pinto, Daniel Zaroni; Rubinger, Carla Patrícia Lacerda; Oliveira, Adhimar Flávio; da Costa Bortoni, Edson

    2015-01-01

    We compared the photometric and radiometric quantities in the visible, ultraviolet, and infrared spectra of white light-emitting diodes (LEDs), incandescent light bulbs and a compact fluorescent lamp used for home illumination. The color-rendering index and efficiency-related quantities were also used as auxiliary tools in this comparison. LEDs have a better performance in all aspects except for the color-rendering index, which is better with an incandescent light bulb. Compact fluorescent lamps presented results that, to our knowledge, do not justify their substitution for the incandescent light bulb. The main contribution of this work is an approach based on fundamental quantities to evaluate LEDs and other light sources.

  1. n-ZnO/p-GaN heterojunction light-emitting diodes featuring a buried polarization-induced tunneling junction

    NASA Astrophysics Data System (ADS)

    Li, Ling; Zhang, Yuantao; Yan, Long; Jiang, Junyan; Han, Xu; Deng, Gaoqiang; Chi, Chen; Song, Junfeng

    2016-12-01

    n-ZnO/p-GaN heterojunction light-emitting diodes with a p-GaN/Al0.1Ga0.9N/n+-GaN polarization-induced tunneling junction (PITJ) were fabricated by metal-organic chemical vapor deposition. An intense and sharp ultraviolet emission centered at ˜396 nm was observed under forward bias. Compared with the n-ZnO/p-GaN reference diode without PITJ, the light intensity of the proposed diode is increased by ˜1.4-folds due to the improved current spreading. More importantly, the studied diode operates continuously for eight hours with the decay of only ˜3.5% under 20 mA, suggesting a remarkable operating stability. The results demonstrate the feasibility of using PITJ as hole injection layer for high-performance ZnO-based light-emitting devices.

  2. Improved Turn-On and Operating Voltages in AlGaN-Based Deep-Ultraviolet Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Hao, Guo-Dong; Taniguchi, Manabu; Tamari, Naoki; Inoue, Shin-ichiro

    2017-10-01

    While good ohmic contact formation has been achieved on both p-GaN and n-AlGaN surfaces, the turn-on and operating voltages of AlGaN-based deep-ultraviolet light-emitting diodes (DUV-LEDs) remain very high. We find that this critical problem is mainly caused by the large difference between the annealing temperatures required for ohmic contact formation on the p-GaN and high Al-fraction n-AlGaN surfaces. We studied the effects of the high-temperature annealing treatments required for n-ohmic contact formation on the subsequent p-ohmic contact formation process in DUV-LEDs. The results show that post-annealing treatment at high temperature is necessary to form an ohmic contact on n-Al0.7Ga0.3N, but a treatment temperature of 900°C or more could cause severe degradation of the specific contact resistivity and the bulk resistivity of p-GaN. We conclude that 900°C is the optimum temperature to form an ohmic contact on n-Al0.7Ga0.3N in DUV-LEDs, where p-GaN and n-Al0.7Ga0.3N act as the p- and n-ohmic contact layers, respectively. We also found that the specific contact resistivity of p-GaN can be reduced by an additional low-temperature annealing treatment after the high-temperature annealing step; this effect can be attributed to the enhancement of the hole concentration in the p-GaN surface contact region. Finally, DUV-LEDs that emit at 280 nm were fabricated using four different annealing treatments during processing. A considerable reduction in the series resistance and thereby in the operating voltage was confirmed using the annealing process proposed above, consisting of a high-temperature anneal at 900°C followed by a low-temperature anneal at 500°C for 3 min.

  3. Metal-assisted electroless fabrication of nanoporous p-GaN for increasing the light extraction efficiency of light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang Ruijun; Liu Duo; Zuo Zhiyuan

    2012-03-15

    We report metal-assisted electroless fabrication of nanoporous p-GaN to improve the light extraction efficiency of GaN-based light emitting diodes (LEDs). Although it has long been believed that p-GaN cannot be etched at room temperature, in this study we find that Ag nanocrystals (NCs) on the p-GaN surface enable effective etching of p-GaN in a mixture of HF and K{sub 2}S{sub 2}O{sub 8} under ultraviolet (UV) irradiation. It is further shown that the roughened GaN/air interface enables strong scattering of photons emitted from the multiple quantum wells (MQWs). The light output power measurements indicate that the nanoporous LEDs obtained after 10more » min etching show a 32.7% enhancement in light-output relative to the conventional LEDs at an injection current of 20 mA without significant increase of the operating voltage. In contrast, the samples etched for 20 min show performance degradation when compared with those etched for 10 min, this is attributed to the current crowding effect and increased surface recombination rate.« less

  4. Perovskite Materials for Light-Emitting Diodes and Lasers.

    PubMed

    Veldhuis, Sjoerd A; Boix, Pablo P; Yantara, Natalia; Li, Mingjie; Sum, Tze Chien; Mathews, Nripan; Mhaisalkar, Subodh G

    2016-08-01

    Organic-inorganic hybrid perovskites have cemented their position as an exceptional class of optoelectronic materials thanks to record photovoltaic efficiencies of 22.1%, as well as promising demonstrations of light-emitting diodes, lasers, and light-emitting transistors. Perovskite materials with photoluminescence quantum yields close to 100% and perovskite light-emitting diodes with external quantum efficiencies of 8% and current efficiencies of 43 cd A(-1) have been achieved. Although perovskite light-emitting devices are yet to become industrially relevant, in merely two years these devices have achieved the brightness and efficiencies that organic light-emitting diodes accomplished in two decades. Further advances will rely decisively on the multitude of compositional, structural variants that enable the formation of lower-dimensionality layered and three-dimensional perovskites, nanostructures, charge-transport materials, and device processing with architectural innovations. Here, the rapid advancements in perovskite light-emitting devices and lasers are reviewed. The key challenges in materials development, device fabrication, operational stability are addressed, and an outlook is presented that will address market viability of perovskite light-emitting devices. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  5. Structural, electrical and optical characterization of high brightness phosphor-free white light emitting diodes

    NASA Astrophysics Data System (ADS)

    Omiya, Hiromasa

    Much interest currently exists in GaN and related materials for applications such as light-emitting devices operating in the amber to ultraviolet range. Solid-state lighting (SSL) using these materials is widely being investigated worldwide, especially due to their high-energy efficiency and its impact on environmental issues. A new approach for solid-state lighting uses phosphor-free white light emitting diodes (LEDs) that consist of blue, green, and red quantum wells (QW), all in a single device. This approach leads to improved color rendering, and directionality, compared to the conventional white LEDs that use yellow phosphor on blue or ultraviolet emitters. Improving the brightness of these phosphor-free white LEDs should enhance and accelerate the development of SSL technology. The main objective of the research reported in this dissertation is to provide a comprehensive understanding of the nature of the multiple quantum wells used in phosphor-free white LEDs. This dissertation starts with an introduction to lighting history, the fundamental concepts of nitride semiconductors, and the evolution of LED technology. Two important challenges in LED technology today are metal-semiconductor contacts and internal piezoelectric fields present in quantum well structures. Thus, the main portion of this dissertation consists of three parts dealing with metal-semiconductor interfaces, single quantum well structures, and multiple quantum well devices. Gold-nickel alloys are widely used as contacts to the p-region of LEDs. We have performed a detailed study for its evolution under standard annealing steps. The atomic arrangement of gold at its interface with GaN gives a clear explanation for the improved ohmic contact performance. We next focus on the nature of InGaN QWs. The dynamic response of the QWs was studied with electron holography and time-resolved cathodoluminescence. Establishing the correlation between energy band structure and the light emission spectra

  6. Broadband light-emitting diode

    DOEpatents

    Fritz, Ian J.; Klem, John F.; Hafich, Michael J.

    1998-01-01

    A broadband light-emitting diode. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3-2 .mu.m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-division-multiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft.

  7. Broadband light-emitting diode

    DOEpatents

    Fritz, I.J.; Klem, J.F.; Hafich, M.J.

    1998-07-14

    A broadband light-emitting diode is disclosed. The broadband light-emitting diode (LED) comprises a plurality of III-V compound semiconductor layers grown on a semiconductor substrate, with the semiconductor layers including a pair of cladding layers sandwiched about a strained-quantum-well active region having a plurality of different energy bandgaps for generating light in a wavelength range of about 1.3--2 {micro}m. In one embodiment of the present invention, the active region may comprise a first-grown quantum-well layer and a last-grown quantum-well layer that are oppositely strained; whereas in another embodiment of the invention, the active region is formed from a short-period superlattice structure (i.e. a pseudo alloy) comprising alternating thin layers of InGaAs and InGaAlAs. The use a short-period superlattice structure for the active region allows different layers within the active region to be simply and accurately grown by repetitively opening and closing one or more shutters in an MBE growth apparatus to repetitively switch between different growth states therein. The broadband LED may be formed as either a surface-emitting LED or as an edge-emitting LED for use in applications such as chemical sensing, fiber optic gyroscopes, wavelength-divisionmultiplexed (WDM) fiber-optic data links, and WDM fiber-optic sensor networks for automobiles and aircraft. 10 figs.

  8. Evaluation of light-emitting diode beacon light fixtures.

    DOT National Transportation Integrated Search

    2009-12-01

    Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

  9. Reshaping Light-Emitting Diodes To Increase External Efficiency

    NASA Technical Reports Server (NTRS)

    Rogowski, Robert; Egalon, Claudio

    1995-01-01

    Light-emitting diodes (LEDs) reshaped, according to proposal, increasing amount of light emitted by decreasing fraction of light trapped via total internal reflection. Results in greater luminous output power for same electrical input power; greater external efficiency. Furthermore, light emitted by reshaped LEDs more nearly collimated (less diffuse). Concept potentially advantageous for conventional red-emitting LEDs. More advantageous for new "blue" LEDs, because luminous outputs and efficiencies of these devices very low. Another advantage, proposed conical shapes achieved relatively easily by chemical etching of semiconductor surfaces.

  10. Polarization of edge emission from III-nitride light emitting diodes of emission wavelength from 395 to 455 nm

    NASA Astrophysics Data System (ADS)

    Jia, Chuanyu; Yu, Tongjun; Mu, Sen; Pan, Yaobo; Yang, Zhijian; Chen, Zhizhong; Qin, Zhixin; Zhang, Guoyi

    2007-05-01

    Polarization-resolved edge-emitting electroluminescence of InGaN /GaN multiple quantum well (MQW) light emitting diodes (LEDs) from 395to455nm was measured. Polarization ratio decreased from 3.2 of near-ultraviolet LEDs (395nm) to 1.9 of blue LEDs (455nm). Based on TE mode dominant emissions in InGaN /GaN MQWs, compressive strain in well region favors TE mode, indium induced quantum-dot-like behavior leads to an increased TM component. As wavelength increased, indium enhanced quantum-dot-like behavior became obvious and E ‖C electroluminescence signal increased thus lower polarization ratio. Electroluminescence spectrum shifts confirmed that quantum dotlike behaviors rather than strain might be dominant in modifying luminescence mode of InGaN /GaN MQWs from near ultraviolet to blue.

  11. Light transmission and ultraviolet protection of contact lenses under artificial illumination.

    PubMed

    Artigas, José M; Navea, Amparo; García-Domene, M Carmen; Gené, Andrés; Artigas, Cristina

    2016-04-01

    To determine the spectral transmission of contact lenses (CLs), with and without an ultraviolet (UV) filter to evaluate their capacity for protection under UV radiation from artificial illumination (incandescent, fluorescent, xenon (Xe) lamps, or white LEDs (light-emitting diode)). The transmission curves of nine soft CLs were obtained by using a PerkinElmer Lambda 35 UV-vis spectrophotometer. A CIE standard was used for the emission spectra of incandescent and fluorescent lamps, and Xe lamps and white LEDs were measured by using an International Light Technologies ILT-950 spectroradiometer. Five of the nine soft CLs analysed state that they incorporate UV filters, but the other four do not specify anything in this regard. The spectral transmission of all the CLs studied is excellent in the visible region. The CLs with UV filters filter out this radiation more or less effectively. Xe lamps emit a part in the UV region. Incandescent, fluorescent and white LEDs do not emit at all in the UV. Incorporating UV filters is important when the illumination is from a Xe lamp since this light source emits in the UV region. This, however, does not occur with incandescent and fluorescent lamps or white LEDs. The CLs that do incorporate UV filters meet all the standard requirements that the U.S. FDA (Food and Drug Administration) has for UV-blocking CLs Class II (OcularScience, CooperVision and Neolens), and AcuvueMoist and HydronActifresh400 even comply with the stricter Class I. The CLs without UV filters let UVA, UVB and even some UVC through. Copyright © 2015. Published by Elsevier Ltd.

  12. Printing method for organic light emitting device lighting

    NASA Astrophysics Data System (ADS)

    Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo-Gun; Kim, Tae-Un; Kim, Snag-Gi; Hong, Kyung-Jin; So, Soon-Yeol

    2013-03-01

    Organic Light Emitting Device (OLED) has a characteristic to change the electric energy into the light when the electric field is applied to the organic material. OLED is currently employed as a light source for the lighting tools because research has extensively progressed in the improvement of luminance, efficiency, and life time. OLED is widely used in the plate display device because of a simple manufacture process and high emitting efficiency. But most of OLED lighting projects were used the vacuum evaporator (thermal evaporator) with low molecular. Although printing method has lower efficiency and life time of OLED than vacuum evaporator method, projects of printing OLED actively are progressed because was possible to combine with flexible substrate and printing technology. Printing technology is ink-jet, screen printing and slot coating. This printing method allows for low cost and mass production techniques and large substrates. In this research, we have proposed inkjet printing for organic light-emitting devices has the dominant method of thick film deposition because of its low cost and simple processing. In this research, the fabrication of the passive matrix OLED is achieved by inkjet printing, using a polymer phosphorescent ink. We are measured optical and electrical characteristics of OLED.

  13. Carrier Conduction and Light Emission by Modification of Poly(alkylfluorene) Interface under Vacuum Ultraviolet Light Irradiation

    NASA Astrophysics Data System (ADS)

    Ohmori, Yutaka; Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke

    2013-03-01

    Organic field effect transistors (OFETs) have been extensively studied for flexible electronics. The characteristics of poly(9,9-dioctylfluorenyl-2,7-dyl) (F8) modified by thermal or light are strongly dependent on the carrier transport and optical characteristics. We investigate all solution-processed OFETs with Ag nano-ink as gate electrodes patterned by Vacuum Ultraviolet (VUV) (172 nm). Bi-layer gate insulators of amorphous fluoro-polymer CYTOP (Asahi Glass Corp.) and poly(methylmethacrylate) (PMMA) were used. Top-gate-type OFETs with ITO source/drain electrode utilizing F8 or poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) as an active layer were fabricated, and investigated the carrier conduction and emission characteristic. Without VUV irradiation, both OFETs showed the ambipolar and light-emitting characteristics. On the other hand, F8 devices with VUV exhibited only p-type conduction. The quenching centers were generated in F8 layer by VUV irradiation, which are related to the electron trap sites at the interface. OFETs with F8BT showed both p- and n-type conduction even after VUV. F8BT suffers less damage by VUV and maintain light emission. Light emitting transistors were realized utilizing F8BT patterned by VUV irradiation. This research was partially supported financially by MEXT. The authors thank Harima Chemicals Inc. for providing Ag nano-ink.

  14. White- and blue-light-emitting dysprosium(III) and terbium(III)-doped gadolinium titanate phosphors.

    PubMed

    Antić, Ž; Kuzman, S; Đorđević, V; Dramićanin, M D; Thundat, T

    2017-06-01

    Here we report the synthesis and structural, morphological, and photoluminescence analysis of white- and blue-light-emitting Dy 3 + - and Tm 3 + -doped Gd 2 Ti 2 O 7 nanophosphors. Single-phase cubic Gd 2 Ti 2 O 7 nanopowders consist of compact, dense aggregates of nanoparticles with an average size of ~25 nm for Dy 3 + -doped and ~50 nm for Tm 3 + -doped samples. The photoluminescence results indicated that ultraviolet (UV) light excitation of the Dy 3 + -doped sample resulted in direct generation of white light, while a dominant yellow emission was obtained under blue-light excitation. Intense blue light was obtained for Tm 3 + -doped Gd 2 Ti 2 O 7 under UV excitation suggesting that this material could be used as a blue phosphor. Copyright © 2016 John Wiley & Sons, Ltd.

  15. Effect of device package on optical, spectral, and thermal properties of InGaN/GaN near-ultraviolet lateral light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Lee, Soo Hyun; Guan, Xiang-Yu; Jeon, Soo-Kun; Yu, Jae Su

    2017-09-01

    We investigated the package effect on the temperature-dependent optical and spectral characteristics of InGaN/GaN near-ultraviolet (NUV) lateral light-emitting diodes (LLEDs) on the metal heatsink (MH) and package (PKG) in the injection current range of 0 - 500 mA at 298 and 358 K. For the NUV LLEDs on the MH, the device characteristics reflected directly its chip performance. For the NUV LLEDs on the PKG, the rapidly varied spectral shift as well as the reduced device efficiency was observed due to the increased number of layers with relatively low thermal conductivities. The junction temperature ( T j ) and thermal resistance of the NUV LLEDs on the PKG were also significantly increased compared to the NUV LLEDs on the MH. The three-dimensional heat transfer simulations for both the devices were carried out to obtain the temperature distributions by finite element method. The theoretically calculated T j values showed a good agreement with the experimentally measured T j values.

  16. Microwave-driven ultraviolet light sources

    DOEpatents

    Manos, Dennis M.; Diggs, Jessie; Ametepe, Joseph D.

    2002-01-29

    A microwave-driven ultraviolet (UV) light source is provided. The light source comprises an over-moded microwave cavity having at least one discharge bulb disposed within the microwave cavity. At least one magnetron probe is coupled directly to the microwave cavity.

  17. Far-ultraviolet spectral changes of titanium dioxide with gold nanoparticles by ultraviolet and visible light

    NASA Astrophysics Data System (ADS)

    Tanabe, Ichiro; Kurawaki, Yuji

    2018-05-01

    Attenuated total reflectance spectra including the far-ultraviolet (FUV, ≤ 200 nm) region of titanium dioxide (TiO2) with and without gold (Au) nanoparticles were measured. A newly developed external light-irradiation system enabled to observe spectral changes of TiO2 with Au nanoparticles upon light irradiations. Absorption in the FUV region decreased and increased by the irradiation with ultraviolet and visible light, respectively. These spectral changes may reflect photo-induced electron transfer from TiO2 to Au nanoparticles under ultraviolet light and from Au nanoparticles to TiO2 under visible light, respectively.

  18. An entangled-light-emitting diode.

    PubMed

    Salter, C L; Stevenson, R M; Farrer, I; Nicoll, C A; Ritchie, D A; Shields, A J

    2010-06-03

    An optical quantum computer, powerful enough to solve problems so far intractable using conventional digital logic, requires a large number of entangled photons. At present, entangled-light sources are optically driven with lasers, which are impractical for quantum computing owing to the bulk and complexity of the optics required for large-scale applications. Parametric down-conversion is the most widely used source of entangled light, and has been used to implement non-destructive quantum logic gates. However, these sources are Poissonian and probabilistically emit zero or multiple entangled photon pairs in most cycles, fundamentally limiting the success probability of quantum computational operations. These complications can be overcome by using an electrically driven on-demand source of entangled photon pairs, but so far such a source has not been produced. Here we report the realization of an electrically driven source of entangled photon pairs, consisting of a quantum dot embedded in a semiconductor light-emitting diode (LED) structure. We show that the device emits entangled photon pairs under d.c. and a.c. injection, the latter achieving an entanglement fidelity of up to 0.82. Entangled light with such high fidelity is sufficient for application in quantum relays, in core components of quantum computing such as teleportation, and in entanglement swapping. The a.c. operation of the entangled-light-emitting diode (ELED) indicates its potential function as an on-demand source without the need for a complicated laser driving system; consequently, the ELED is at present the best source on which to base future scalable quantum information applications.

  19. Light emitting diodes as a plant lighting source

    NASA Technical Reports Server (NTRS)

    Bula, R. J.; Tennessen, D. J.; Morrow, R. C.; Tibbitts, T. W.

    1994-01-01

    Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. A number of LED characteristics are of considerable importance in selecting a light source for plant lighting in a controlled environment facility. Of particular importance is the characteristic that light is generated by an LED at a rate far greater than the corresponding thermal radiation predicted by the bulk temperature of the device as defined by Plank's radiation law. This is in sharp contrast to other light sources, such as an incandescent or high intensity discharge lamp. A plant lighting system for controlled environments must provide plants with an adequate flux of photosynthetically active radiation, plus providing photons in the spectral regions that are involved in the photomorphogenic and phototropic responses that result in normal plant growth and development. Use of light sources that emit photons over a broad spectral range generally meet these two lighting requirements. Since the LED's emit over specific spectral regions, they must be carefully selected so that the levels of photsynthetically active and photomorphogenic and phototropic radiation meet these plant requirements.

  20. Ultraviolet safety assessments of insect light traps

    PubMed Central

    Sliney, David H.; Gilbert, David W.; Lyon, Terry

    2016-01-01

    ABSTRACT Near-ultraviolet (UV-A: 315–400 nm), “black-light,” electric lamps were invented in 1935 and ultraviolet insect light traps (ILTs) were introduced for use in agriculture around that time. Today ILTs are used indoors in several industries and in food-service as well as in outdoor settings. With recent interest in photobiological lamp safety, safety standards are being developed to test for potentially hazardous ultraviolet emissions. A variety of UV “Black-light” ILTs were measured at a range of distances to assess potential exposures. Realistic time-weighted human exposures are shown to be well below current guidelines for human exposure to ultraviolet radiation. These UV-A exposures would be far less than the typical UV-A exposure in the outdoor environment. Proposals are made for realistic ultraviolet safety standards for ILT products. PMID:27043058

  1. Far-ultraviolet spectral changes of titanium dioxide with gold nanoparticles by ultraviolet and visible light.

    PubMed

    Tanabe, Ichiro; Kurawaki, Yuji

    2018-05-15

    Attenuated total reflectance spectra including the far-ultraviolet (FUV, ≤200nm) region of titanium dioxide (TiO 2 ) with and without gold (Au) nanoparticles were measured. A newly developed external light-irradiation system enabled to observe spectral changes of TiO 2 with Au nanoparticles upon light irradiations. Absorption in the FUV region decreased and increased by the irradiation with ultraviolet and visible light, respectively. These spectral changes may reflect photo-induced electron transfer from TiO 2 to Au nanoparticles under ultraviolet light and from Au nanoparticles to TiO 2 under visible light, respectively. Copyright © 2017 Elsevier B.V. All rights reserved.

  2. White organic light-emitting diodes with ultra-thin mixed emitting layer

    NASA Astrophysics Data System (ADS)

    Jeon, T.; Forget, S.; Chenais, S.; Geffroy, B.; Tondelier, D.; Bonnassieux, Y.; Ishow, E.

    2012-02-01

    White light can be obtained from Organic Light Emitting Diodes by mixing three primary colors, (i.e. red, green and blue) or two complementary colors in the emissive layer. In order to improve the efficiency and stability of the devices, a host-guest system is generally used as an emitting layer. However, the color balance to obtain white light is difficult to control and optimize because the spectrum is very sensitive to doping concentration (especially when a small amount of material is used). We use here an ultra-thin mixed emitting layer (UML) deposited by thermal evaporation to fabricate white organic light emitting diodes (WOLEDs) without co-evaporation. The UML was inserted in the hole-transporting layer consisting of 4, 4'-bis[N-(1-naphtyl)-N-phenylamino]biphenyl (α-NPB) instead of using a conventional doping process. The UML was formed from a single evaporation boat containing a mixture of two dipolar starbust triarylamine molecules (fvin and fcho) presenting very similar structures and thermal properties and emitting in complementary spectral regions (orange and blue respectively) and mixed according to their weight ratio. The composition of the UML specifically allows for fine tuning of the emission color despite its very thin thickness down to 1 nm. Competitive energy transfer processes from fcho and the host interface toward fvin are key parameters to control the relative intensity between red and blue emission. White light with very good CIE 1931 color coordinate (0.34, 0.34) was obtained by simply adjusting the UML film composition.

  3. AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices

    NASA Astrophysics Data System (ADS)

    Zhao, Lu; Zhang, Shuo; Zhang, Yun; Yan, Jianchang; Zhang, Lian; Ai, Yujie; Guo, Yanan; Ni, Ruxue; Wang, Junxi; Li, Jinmin

    2018-01-01

    We demonstrate AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sputter-deposited AlN templates upon sapphire substrates. An AlN/AlGaN superlattices structure is inserted as a dislocation filter between the LED structure and the AlN template. The full width at half maximum values for (0002) and (10 1 bar 2) X-ray rocking curves of the n-type Al0.56Ga0.44N layer are 513 and 1205 arcsec, respectively, with the surface roughness of 0.52 nm. The electron concentration and mobility measured by Hall measurement are 9.3 × 1017cm-3 and 54 cm2/V·s at room temperature, respectively. The light output power of a 282-nm LED reaches 0.28 mW at 20 mA with an external quantum efficiency of 0.32%. And the values of leakage current and forward voltage of the LEDs are ∼3 nA at -10 V and 6.9 V at 20 mA, respectively, showing good electrical performance. It is expected that the cost of the UV-LED can be reduced by using sputter-deposited AlN template.

  4. A simple sub-nanosecond ultraviolet light pulse generator with high repetition rate and peak power.

    PubMed

    Binh, P H; Trong, V D; Renucci, P; Marie, X

    2013-08-01

    We present a simple ultraviolet sub-nanosecond pulse generator using commercial ultraviolet light-emitting diodes with peak emission wavelengths of 290 nm, 318 nm, 338 nm, and 405 nm. The generator is based on step recovery diode, short-circuited transmission line, and current-shaping circuit. The narrowest pulses achieved have 630 ps full width at half maximum at repetition rate of 80 MHz. Optical pulse power in the range of several hundreds of microwatts depends on the applied bias voltage. The bias voltage dependences of the output optical pulse width and peak power are analysed and discussed. Compared to commercial UV sub-nanosecond generators, the proposed generator can produce much higher pulse repetition rate and peak power.

  5. Formation of an indium tin oxide nanodot/Ag nanowire electrode as a current spreader for near ultraviolet AlGaN-based light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Park, Jae-Seong; Kim, Jae-Ho; Kim, Jun-Yong; Kim, Dae-Hyun; Na, Jin-Young; Kim, Sun-Kyung; Kang, Daesung; Seong, Tae-Yeon

    2017-01-01

    Indium tin oxide (ITO) nanodots (NDs) were combined with Ag nanowires (Ag NWs) as a p-type electrode in near ultraviolet AlGaN-based light-emitting diodes (LEDs) to increase light output power. The Ag NWs were 30 ± 5 nm in diameter and 25 ± 5 μm in length. The transmittance of 10 nm-thick ITO-only was 98% at 385 nm, while the values for ITO ND/Ag NW were 83%-88%. ITO ND/Ag NW films showed lower sheet resistances (32-51 Ω sq-1) than the ITO-only film (950 Ω sq-1). LEDs (chip size: 300 × 800 μm2) fabricated using the ITO NDs/Ag NW electrodes exhibited higher forward-bias voltages (3.52-3.75 V at 20 mA) than the LEDs with the 10 nm-thick ITO-only electrode (3.5 V). The LEDs with ITO ND/Ag NW electrodes yielded a 24%-62% higher light output power (at 20 mA) than those with the 10 nm-thick ITO-only electrode. Furthermore, finite-difference time-domain (FDTD) simulations were performed to investigate the extraction efficiency. Based on the emission images and FDTD simulations, the enhanced light output with the ITO ND/Ag NW electrodes is attributed to improved current spreading and better extraction efficiency.

  6. Light emitting diodes as a plant lighting source

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bula, R.J.; Tennessen, D.J.; Morrow, R.C.

    1994-12-31

    Electroluminescence in solid materials is defined as the generation of light by the passage of an electric current through a body of solid material under an applied electric field. A specific type of electroluminescence, first noted by Lossew in 1923, involves the generation of photons when electrons are passed through a p-n junction of certain solid materials (junction of a n-type semiconductor, an electron donor, and a p-type semiconductor, an electron acceptor). Development efforts to translate these observations into visible light emitting devices, however, was not undertaken until the 1950s. The term, light emitting diode (LEDs), was first used inmore » a report by Wolfe, et al., in 1955. The development of this light emitting semiconductor technology dates back less than 30 years. During this period of time, the LED has evolved from a rare and expensive light generating device to one of the most widely used electronic components. The most popular applications of the LED are as indicators or as optoelectronic switches. However, several recent advances in LED technology have made possible the utilization of LEDs for applications that require a high photon flux, such as for plant lighting in controlled environments. The new generation of LEDs based on a gallium aluminum arsenide (GaAlAS) semiconductor material fabricated as a double heterostructure on a transparent substrate has opened up many new applications for these LEDs.« less

  7. Optical design of tunnel lighting with white light-emitting diodes.

    PubMed

    Tsai, Ming-Shiou; Lee, Xuan-Hao; Lo, Yi-Chien; Sun, Ching-Cherng

    2014-10-10

    This paper presents a tunnel lighting design consisting of a cluster light-emitting diode and a free-form lens. Most of the energy emitted from the proposed luminaire is transmitted onto the surface of the road in front of drivers, and the probability that that energy is emitted directly into drivers' eyes is low. Compared with traditional fluorescent lamps, the proposed luminaire, of which the optical utilization factor, optical efficiency, and uniformity are, respectively, 44%, 92.5%, and 0.72, exhibits favorable performance in energy saving, glare reduction, and traffic safety.

  8. Mn2- x Y x (MoO4)3 Phosphor Excited by UV GaN-Based Light-Emitting Diode for White Emission

    NASA Astrophysics Data System (ADS)

    Chen, Lung-Chien; Tseng, Zong-Liang; Hsu, Ting-Chun; Yang, Shengyi; Chen, Yuan-Bin

    2017-04-01

    One option for low-cost white light-emitting diodes (LEDs) is the combination of a near-ultraviolet (UV) LED chip (382 nm) and a single phosphor. Such Mn2- x Y x (MoO4)3 single phosphors have been fabricated by a simple solid-state reaction route and their emission color tuned by controlling the Mn doping amount. The chromaticity coordinates of the white light emitted by the UV GaN LED with the MnY(MoO4)3 phosphor were x = 0.5204 and y = 0.4050 [correlated color temperature (CCT) = 7958 K].

  9. P-doping-free III-nitride high electron mobility light-emitting diodes and transistors

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Baikui; Tang, Xi; Chen, Kevin J., E-mail: eekjchen@ust.hk

    2014-07-21

    We report that a simple metal-AlGaN/GaN Schottky diode is capable of producing GaN band-edge ultraviolet emission at 3.4 eV at a small forward bias larger than ∼2 V at room temperature. Based on the surface states distribution of AlGaN, a mature impact-ionization-induced Fermi-level de-pinning model is proposed to explain the underlying mechanism of the electroluminescence (EL) process. By experimenting with different Schottky metals, Ni/Au and Pt/Au, we demonstrated that this EL phenomenon is a “universal” property of metal-AlGaN/GaN Schottky diodes. Since this light-emitting Schottky diode shares the same active structure and fabrication processes as the AlGaN/GaN high electron mobility transistors, straight-forward andmore » seamless integration of photonic and electronic functional devices has been demonstrated on doping-free III-nitride heterostructures. Using a semitransparent Schottky drain electrode, an AlGaN/GaN high electron mobility light-emitting transistor is demonstrated.« less

  10. Calibration of optimal use parameters for an ultraviolet light-emitting diode in eliminating bacterial contamination on needleless connectors.

    PubMed

    Hutchens, M P; Drennan, S L; Cambronne, E D

    2015-06-01

    Needleless connectors may develop bacterial contamination and cause central-line-associated bloodstream infections (CLABSI) despite rigorous application of best-practice. Ultraviolet (UV) light-emitting diodes (LED) are an emerging, increasingly affordable disinfection technology. We tested the hypothesis that a low-power UV LED could reliably eliminate bacteria on needleless central-line ports in a laboratory model of central-line contamination. Needleless central-line connectors were inoculated with Staphylococcus aureus. A 285 nm UV LED was used in calibrated fashion to expose contaminated connectors. Ports were directly applied to agar plates and flushed with sterile saline, allowing assessment of bacterial survival on the port surface and in simulated usage flow-through fluid. UV applied to needleless central-line connectors was highly lethal at 0·5 cm distance at all tested exposure times. At distances >1·5 cm both simulated flow-through and port surface cultures demonstrated significant bacterial growth following UV exposure. Logarithmic-phase S. aureus subcultures were highly susceptible to UV induction/maintenance dosing. Low-power UV LED doses at fixed time and distance from needleless central-line connector ports reduced cultivable S. aureus from >10(6) CFU to below detectable levels in this laboratory simulation of central-line port contamination. Low-power UV LEDs may represent a feasible alternative to current best-practice in connector decontamination. © 2015 The Society for Applied Microbiology.

  11. Demonstrating the Light-Emitting Diode.

    ERIC Educational Resources Information Center

    Johnson, David A.

    1995-01-01

    Describes a simple inexpensive circuit which can be used to quickly demonstrate the basic function and versatility of the solid state diode. Can be used to demonstrate the light-emitting diode (LED) as a light emitter, temperature sensor, light detector with both a linear and logarithmic response, and charge storage device. (JRH)

  12. Cr/ITO semi-transparent n-type electrode for high-efficiency AlGaN/InGaN-based near ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Kim, Hwankyo; Kim, Dae-Hyun; Seong, Tae-Yeon

    2017-11-01

    We investigated the electrical performance of near ultraviolet (NUV) (390 nm) light-emitting diodes (LEDs) fabricated with various semi-transparent Cr/ITO n-type contacts. It was shown that after annealing at 400 °C, Cr/ITO (10 nm/40 nm) contact was ohmic with a specific contact resistance of 9.8 × 10-4 Ωcm2. NUV AlGaN-based LEDs fabricated with different Cr/ITO (6-12 nm/40 nm) electrodes exhibited forward-bias voltages of 3.27-3.30 V at an injection current of 20 mA, which are similar to that of reference LED with Cr/Ni/Au (20 nm/25 nm/200 nm) electrode (3.29 V). The LEDs with the Cr/ITO electrodes gave series resistances of 10.69-11.98 Ω, while the series resistance is 10.84 Ohm for the reference LED. The transmittance of the Cr/ITO samples significantly improved when annealed at 400 °C. The transmittance (25.8-45.2% at 390 nm) of the annealed samples decreased with increasing Cr layer thickness. The LEDs with the Cr/ITO electrodes exhibited higher light output power than reference LED (with Cr/Ni/Au electrode). In particular, the LED with the Cr/ITO (12 nm/40 nm) electrode showed 9.3% higher light output power at 100 mA than reference LED. Based on the X-ray photoemission spectroscopy (XPS) and electrical results, the ohmic formation mechanism is described and discussed.

  13. Monolithically Integrated Metal/Semiconductor Tunnel Junction Nanowire Light-Emitting Diodes.

    PubMed

    Sadaf, S M; Ra, Y H; Szkopek, T; Mi, Z

    2016-02-10

    We have demonstrated for the first time an n(++)-GaN/Al/p(++)-GaN backward diode, wherein an epitaxial Al layer serves as the tunnel junction. The resulting p-contact free InGaN/GaN nanowire light-emitting diodes (LEDs) exhibited a low turn-on voltage (∼2.9 V), reduced resistance, and enhanced power, compared to nanowire LEDs without the use of Al tunnel junction or with the incorporation of an n(++)-GaN/p(++)-GaN tunnel junction. This unique Al tunnel junction overcomes some of the critical issues related to conventional GaN-based tunnel junction designs, including stress relaxation, wide depletion region, and light absorption, and holds tremendous promise for realizing low-resistivity, high-brightness III-nitride nanowire LEDs in the visible and deep ultraviolet spectral range. Moreover, the demonstration of monolithic integration of metal and semiconductor nanowire heterojunctions provides a seamless platform for realizing a broad range of multifunctional nanoscale electronic and photonic devices.

  14. Flexible liquid core light guide with focusing and light shaping attachments

    DOEpatents

    Kross, B.J.; Majewski, S.; Zorn, C.J.; Majewski, L.A.

    1997-11-04

    A liquid light guide system for ultraviolet light is disclosed that has a light shaping arrangement for the emitted light, a stable liquid core and sheath and reliable and effective end closures. 12 figs.

  15. [A novel yellow organic light-emitting device].

    PubMed

    Ma, Chen; Wang, Hua; Hao, Yu-Ying; Gao, Zhi-Xiang; Zhou, He-Feng; Xu, Bing-She

    2008-07-01

    The fabrication of a novel organic yellow-light-emitting device using Rhodamine B as dopant with double quantum-well (DQW) structure was introduced in the present article. The structure and thickness of this device is ITO/CuPc (6 nm) /NPB (20 nm) /Alq3 (3 nm)/Alq3 : Rhodamine B (3 nm) /Alq3 (3 nm) /Al q3 : Rhodamine B(3 nm) /Alq3 (30 nm) /Liq (5 nm)/Al (30 nm). With the detailed investigation of electroluminescence of the novel organic yellow-light-emitting device, the authors found that the doping concentration of Rhodamine B (RhB) had a very big influence on luminance and efficiency of the organic yellow-light-emitting device. When doping concentration of Rhodamine B (RhB) was 1.5 wt%, the organic yellow-light-emitting device was obtained with the maximum current efficiency of 1.526 cd x A(-1) and the maximum luminance of 1 309 cd x m(-2). It can be seen from the EL spectra of the devices that there existed energy transferring from Alq3 to RhB in the organic light-emitting layers. When the doping concentration of RhB increased, lambda(max) of EL spectra redshifted obviously. The phenomenon was attributed to the Stokes effect of quantum wells and self-polarization of RhB dye molecules.

  16. Stimulation of hair cells with ultraviolet light

    NASA Astrophysics Data System (ADS)

    Azimzadeh, Julien B.; Fabella, Brian A.; Hudspeth, A. J.

    2018-05-01

    Hair bundles are specialized organelles that transduce mechanical inputs into electrical outputs. To activate hair cells, physiologists have resorted to mechanical methods of hair-bundle stimulation. Here we describe a new method of hair-bundle stimulation, irradiation with ultraviolet light. A hair bundle illuminated by ultraviolet light rapidly moves towards its tall edge, a motion typically associated with excitatory stimulation. The motion disappears upon tip-link rupture and is associated with the opening of mechanotransduction channels. Hair bundles can be induced to move sinusoidally with oscillatory modulation of the stimulation power. We discuss the implications of ultraviolet stimulation as a novel hair-bundle stimulus.

  17. An elegant route to overcome fundamentally-limited light extraction in AlGaN deep-ultraviolet light-emitting diodes: preferential outcoupling of strong in-plane emission (Conference Presentation)

    NASA Astrophysics Data System (ADS)

    Kim, Jong Kyu; Lee, Jong Won; Kim, Dong-Yeong; Park, Jun Hyuk; Schubert, E. Fred; Kim, Jungsub; Kim, Yong-Il

    2016-09-01

    AlGaN-based deep ultraviolet (DUV) light-emitting diodes (LEDs) are being developed for their numerous applications such as purification of air and water, sterilization in food processing, UV curing, medical-, and defense-related light sources. However, external quantum efficiency (EQE) of AlGaN-based DUV LEDs is very poor (<5% for 250nm) particularly due to low hole concentration and light extraction efficiency (LEE). Conventional LEE-enhancing techniques used for GaInN-based visible LEDs turned out to be ineffective for DUV LEDs due to difference in intrinsic material property between GaInN and AlGaN (Al< 30%). Unlike GaInN visible LEDs, DUV light from a high Al-content AlGaN active region is strongly transverse-magnetic (TM) polarized, that is, the electric field vector is parallel to the (0001) c-axis and shows strong sidewall emission through m- or a-plane due to crystal-field split-off hole band being top most valence band. Therefore, a new LEE-enhancing approach addressing the unique intrinsic property of AlGaN DUV LEDs is strongly desired. In this study, an elegant approach based on a DUV LED having multiple mesa stripes whose inclined sidewalls are covered by a MgF2/Al omni-directional mirror to take advantage of the strongly anisotropic transverse-magnetic polarized emission pattern of AlGaN quantum wells is presented. The sidewall-emission-enhanced DUV LED breaks through the fundamental limitations caused by the intrinsic properties of AlGaN, thus shows a remarkable improvement in light extraction as well as operating voltage simultaneously. Furthermore, an analytic model is developed to understand and precisely estimate the extraction of DUV photons from AlGaN DUV LEDs, and hence to provide promising routes to maximize the power conversion efficiency.

  18. Novel Ultraviolet Light Absorbing Polymers For Optical Applications

    NASA Astrophysics Data System (ADS)

    Doddi, Namassivaya; Yamada, Akira; Dunks, Gary B.

    1988-07-01

    Ultraviolet light absorbing monomers have been developed that can be copolymerized with acrylates. The composition of the resultant stable copolymers can be adjusted to totally block the transmission of light below about 430 nm. Fabrication of lenses from the materials is accomplished by lathe cutting and injection molding procedures. These ultraviolet light absorbing materials are non-mutagenic and non-toxic and are currently being used in intraocular lenses.

  19. Defining the light emitting area for displays in the unipolar regime of highly efficient light emitting transistors

    PubMed Central

    Ullah, Mujeeb; Armin, Ardalan; Tandy, Kristen; Yambem, Soniya D.; Burn, Paul L.; Meredith, Paul; Namdas, Ebinazar B.

    2015-01-01

    Light-emitting field effect transistors (LEFETs) are an emerging class of multifunctional optoelectronic devices. It combines the light emitting function of an OLED with the switching function of a transistor in a single device architecture. The dual functionality of LEFETs has the potential applications in active matrix displays. However, the key problem of existing LEFETs thus far has been their low EQEs at high brightness, poor ON/OFF and poorly defined light emitting area - a thin emissive zone at the edge of the electrodes. Here we report heterostructure LEFETs based on solution processed unipolar charge transport and an emissive polymer that have an EQE of up to 1% at a brightness of 1350 cd/m2, ON/OFF ratio > 104 and a well-defined light emitting zone suitable for display pixel design. We show that a non-planar hole-injecting electrode combined with a semi-transparent electron-injecting electrode enables to achieve high EQE at high brightness and high ON/OFF ratio. Furthermore, we demonstrate that heterostructure LEFETs have a better frequency response (fcut-off = 2.6 kHz) compared to single layer LEFETs. The results presented here therefore are a major step along the pathway towards the realization of LEFETs for display applications. PMID:25743444

  20. Light emission mechanism of mixed host organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Song, Wook; Lee, Jun Yeob

    2015-03-01

    Light emission mechanism of organic light-emitting diodes with a mixed host emitting layer was studied using an exciplex type mixed host and an exciplex free mixed host. Monitoring of the current density and luminance of the two type mixed host devices revealed that the light emission process of the exciplex type mixed host was dominated by energy transfer, while the light emission of the exciplex free mixed host was controlled by charge trapping. Mixed host composition was also critical to the light emission mechanism, and the contribution of the energy transfer process was maximized at 50:50 mixed host composition. Therefore, it was possible to manage the light emission process of the mixed host devices by managing the mixed host composition.

  1. A flexible top-emitting organic light-emitting diode on steel foil

    NASA Astrophysics Data System (ADS)

    Xie, Zhiyuan; Hung, Liang-Sun; Zhu, Furong

    2003-11-01

    An efficient flexible top-emitting organic light-emitting diode (FTOLED) was developed on a thin steel foil. The FTOLED was constructed on the spin-on-glass (SOG)-coated steel substrate with an organic stack of NPB/Alq 3 sandwiched by a highly reflective Ag anode and a semitransparent Sm cathode. An ultrathin plasma-polymerized hydrocarbon film (CF X) was interposed between the Ag anode and the NPB layer to enhance hole-injection, and an additional Alq 3 layer was overlaid on the Sm cathode to increase light output. The FTOLED showed a peak efficiency of 4.4 cd/A higher than 3.7 cd/A of a convention NPB/Alq 3-based bottom-emitting OLED.

  2. The influence of the environment and clothing on human exposure to ultraviolet light.

    PubMed

    Liu, Jin; Zhang, Wei

    2015-01-01

    The aim of this study is to determine the effect of clothing and the environment on human exposure to ultraviolet light. The ultraviolet (ultraviolet A and ultraviolet B) light intensity was measured, and air quality parameters were recorded in 2014 in Beijing, China. Three types of clothing (white polyester cloth, pure cotton white T-shirt, and pure cotton black T-shirt) were individually placed on a mannequin. The ultraviolet (ultraviolet A and ultraviolet B) light intensities were measured above and beneath each article of clothing, and the percentage of ultraviolet light transmission through the clothing was calculated. (1) The ultraviolet light transmission was significantly higher through white cloth than through black cloth; the transmission was significantly higher through polyester cloth than through cotton. (2) The weather significantly influenced ultraviolet light transmission through white polyester cloth; transmission was highest on clear days and lowest on overcast days (ultraviolet A: P=0.000; ultraviolet B: P=0.008). (3) Air quality parameters (air quality index and particulate matter 2.5 and 10) were inversely related to the ultraviolet light intensity that reached the earth's surface. Ultraviolet B transmission through white polyester cloth was greater under conditions of low air pollution compared with high air pollution. Clothing color and material and different types of weather affected ultraviolet light transmission; for one particular cloth, the transmission decreased with increasing air pollution.

  3. Localized surface plasmon-enhanced ultraviolet electroluminescence from n-ZnO/i-ZnO/p-GaN heterojunction light-emitting diodes via optimizing the thickness of MgO spacer layer

    NASA Astrophysics Data System (ADS)

    Liu, W. Z.; Xu, H. Y.; Zhang, L. X.; Zhang, C.; Ma, J. G.; Wang, J. N.; Liu, Y. C.

    2012-10-01

    Localized surface plasmon (LSP)-enhanced ultraviolet light-emitting diodes were manufactured by introducing Ag nanoparticles and MgO spacer layer into n-ZnO/i-ZnO/p-GaN heterostructures. By optimizing the MgO thickness, which can suppress the undesired charge transfer and nonradiative Förster resonant energy transfer between Ag and ZnO, a 7-fold electroluminescence enhancement was achieved. Time-resolved and temperature-dependent photoluminescence measurements reveal that both spontaneous emission rate and internal quantum efficiency are increased as a result of coupling between ZnO excitons and Ag LSPs, and simple calculations, based on experimental data, also indicate that most of LSP's energy can be converted into the photon energy.

  4. Low cost batch fabrication of microdevices using ultraviolet light-emitting diode photolithography technique

    NASA Astrophysics Data System (ADS)

    Lee, Neam Heng; Swamy, Varghese; Ramakrishnan, Narayanan

    2016-01-01

    Solid-state technology has enabled the use of light-emitting diodes (LEDs) in lithography systems due to their low cost, low power requirement, and higher efficiency relative to the traditional mercury lamp. Uniform irradiance distribution is essential for photolithography to ensure the critical dimension (CD) of the feature fabricated. However, light illuminated from arrays of LEDs can have nonuniform irradiance distribution, which can be a problem when using LED arrays as a source to batch-fabricate multiple devices on a large wafer piece. In this study, the irradiance distribution of an UV LED array was analyzed, and the separation distance between light source and mask optimized to obtain maximum irradiance uniformity without the use of a complex lens. Further, employing a diffuser glass enhanced the fabrication process and the CD loss was minimized to an average of 300 nm. To assess the performance of the proposed technology, batch fabrication of surface acoustic wave devices on lithium niobate substrate was carried out, and all the devices exhibited identical insertion loss of -18 dB at a resonance frequency of 39.33 MHz. The proposed low-cost UV lithography setup can be adapted in academic laboratories for research and teaching on microdevices.

  5. The Influence of the Environment and Clothing on Human Exposure to Ultraviolet Light

    PubMed Central

    Liu, Jin; Zhang, Wei

    2015-01-01

    Objection The aim of this study is to determine the effect of clothing and the environment on human exposure to ultraviolet light. Methods The ultraviolet (ultraviolet A and ultraviolet B) light intensity was measured, and air quality parameters were recorded in 2014 in Beijing, China. Three types of clothing (white polyester cloth, pure cotton white T-shirt, and pure cotton black T-shirt) were individually placed on a mannequin. The ultraviolet (ultraviolet A and ultraviolet B) light intensities were measured above and beneath each article of clothing, and the percentage of ultraviolet light transmission through the clothing was calculated. Results (1) The ultraviolet light transmission was significantly higher through white cloth than through black cloth; the transmission was significantly higher through polyester cloth than through cotton. (2) The weather significantly influenced ultraviolet light transmission through white polyester cloth; transmission was highest on clear days and lowest on overcast days (ultraviolet A: P=0.000; ultraviolet B: P=0.008). (3) Air quality parameters (air quality index and particulate matter 2.5 and 10) were inversely related to the ultraviolet light intensity that reached the earth’s surface. Ultraviolet B transmission through white polyester cloth was greater under conditions of low air pollution compared with high air pollution. Conclusion Clothing color and material and different types of weather affected ultraviolet light transmission; for one particular cloth, the transmission decreased with increasing air pollution. PMID:25923778

  6. Light emitting elastomer compositions and method of use

    DOEpatents

    McElhanon, James R.; Zifer, Thomas; Whinnery, LeRoy L.

    2004-11-23

    There is provided a light emitting device comprising a plurality of triboluminescent particles dispersed throughout an elastomeric body and activated by deforming the body in order to transfer mechanical energy to some portion of the particles. The light emitted by these mechanically excited particles is collected and directed into a light conduit and transmitted to a detector/indicator means.

  7. Improving the performance of AlGaN-based deep-ultraviolet light-emitting diodes using electron blocking layer with a heart-shaped graded Al composition

    NASA Astrophysics Data System (ADS)

    Kwon, M. R.; Park, T. H.; Lee, T. H.; Lee, B. R.; Kim, T. G.

    2018-04-01

    We propose a design for highly efficient AlGaN-based deep-ultraviolet light-emitting diodes (DUV LEDs) using a heart-shaped graded Al composition electron-blocking layer (EBL). This novel structure reduced downward band bending at the interface between the last quantum barrier and the EBL and flattened the electrostatic field in the interlayer between the barriers of the multi-quantum barrier EBL. Consequently, electron leakage was significantly suppressed and hole injection efficiency was found to have improved. The parameter values of simulation were extracted from the experimental data of the reference DUV LEDs. Using the SimuLED, we compared the electrical and optical properties of three structures with different Al compositions in the active region and the EBL. The internal quantum efficiency of the proposed structure was shown to exceed those of the reference DUV LEDs by a factor of 1.9. Additionally, the output power at 20 mA was found to increase by a factor of 2.1.

  8. Tuning the white light spectrum of light emitting diode lamps to reduce attraction of nocturnal arthropods

    PubMed Central

    Longcore, Travis; Aldern, Hannah L.; Eggers, John F.; Flores, Steve; Franco, Lesly; Hirshfield-Yamanishi, Eric; Petrinec, Laina N.; Yan, Wilson A.; Barroso, André M.

    2015-01-01

    Artificial lighting allows humans to be active at night, but has many unintended consequences, including interference with ecological processes, disruption of circadian rhythms and increased exposure to insect vectors of diseases. Although ultraviolet and blue light are usually most attractive to arthropods, degree of attraction varies among orders. With a focus on future indoor lighting applications, we manipulated the spectrum of white lamps to investigate the influence of spectral composition on number of arthropods attracted. We compared numbers of arthropods captured at three customizable light-emitting diode (LED) lamps (3510, 2704 and 2728 K), two commercial LED lamps (2700 K), two commercial compact fluorescent lamps (CFLs; 2700 K) and a control. We configured the three custom LEDs to minimize invertebrate attraction based on published attraction curves for honeybees and moths. Lamps were placed with pan traps at an urban and two rural study sites in Los Angeles, California. For all invertebrate orders combined, our custom LED configurations were less attractive than the commercial LED lamps or CFLs of similar colour temperatures. Thus, adjusting spectral composition of white light to minimize attracting nocturnal arthropods is feasible; not all lights with the same colour temperature are equally attractive to arthropods. PMID:25780237

  9. Evaluation of light-emitting diode beacon light fixtures : final report.

    DOT National Transportation Integrated Search

    2009-12-01

    Rotating beacons containing filament light sources have long been used on highway maintenance trucks : to indicate the presence of the truck to other drivers. Because of advances in light-emitting diode (LED) : technologies, flashing lights containin...

  10. Luminescent properties of Eu{sup 2+}-doped BaGdF{sub 5} glass ceramics a potential blue phosphor for ultra-violet light-emitting diode

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Weihuan; Zhang, Yuepin, E-mail: zhangyuepin@nbu.edu.cn; Ouyang, Shaoye

    2015-01-14

    Eu{sup 2+} doped transparent oxyfluoride glass ceramics containing BaGdF{sub 5} nanocrystals were successfully fabricated by melt-quenching technique under a reductive atmosphere. The structure of the glass and glass ceramics were investigated by differential scanning calorimetry, X-ray diffraction (XRD), and transmission electron microscopy (TEM). The luminescent properties were investigated by transmission, excitation, and emission spectra. The decay time of the Gd{sup 3+} ions at 312 nm excited with 275 nm were also investigated. The results of XRD and TEM indicated the existence of BaGdF5 nanocrystals in the transparent glass ceramics. The excitation spectra of Eu{sup 2+} doped glass ceramics showed an excellent overlapmore » with the main emission region of an ultraviolet light-emitting diode (UV-LED). Compared with the as-made glass, the emission of glass ceramics is much stronger by a factor of increasing energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions, the energy transfer efficiency from Gd{sup 3+} to Eu{sup 2+} ions was discussed. In addition, the chromaticity coordinates of glass and glass ceramics specimens were also discussed, which indicated that the Eu{sup 2+} doped BaGdF{sub 5} glass ceramics may be used as a potential blue-emitting phosphor for UV-LED.« less

  11. Super-Lattice Light Emitting Diodes (SLEDS) on GaAs

    DTIC Science & Technology

    2016-03-31

    Super-Lattice Light Emitting Diodes (SLEDS) on GaAs Kassem Nabha1, Russel Ricker2, Rodney McGee1, Nick Waite1, John Prineas2, Sydney Provence2...infrared light emitting diodes (LEDs). Typically, the LED arrays are mated with CMOS read-in integrated circuit (RIIC) chips using flip-chip bonding. In...circuit (RIIC) chips using flip-chip bonding. This established technology is called Hybrid-super-lattice light emitting diodes (Hybrid- SLEDS). In

  12. Hybrid light emitting transistors (Presentation Recording)

    NASA Astrophysics Data System (ADS)

    Muhieddine, Khalid; Ullah, Mujeeb; Namdas, Ebinazar B.; Burn, Paul L.

    2015-10-01

    Organic light-emitting diodes (OLEDs) are well studied and established in current display applications. Light-emitting transistors (LETs) have been developed to further simplify the necessary circuitry for these applications, combining the switching capabilities of a transistor with the light emitting capabilities of an OLED. Such devices have been studied using mono- and bilayer geometries and a variety of polymers [1], small organic molecules [2] and single crystals [3] within the active layers. Current devices can often suffer from low carrier mobilities and most operate in p-type mode due to a lack of suitable n-type organic charge carrier materials. Hybrid light-emitting transistors (HLETs) are a logical step to improve device performance by harnessing the charge carrier capabilities of inorganic semiconductors [4]. We present state of the art, all solution processed hybrid light-emitting transistors using a non-planar contact geometry [1, 5]. We will discuss HLETs comprised of an inorganic electron transport layer prepared from a sol-gel of zinc tin oxide and several organic emissive materials. The mobility of the devices is found between 1-5 cm2/Vs and they had on/off ratios of ~105. Combined with optical brightness and efficiencies of the order of 103 cd/m2 and 10-3-10-1 %, respectively, these devices are moving towards the performance required for application in displays. [1] M. Ullah, K. Tandy, S. D. Yambem, M. Aljada, P. L. Burn, P. Meredith, E. B. Namdas., Adv. Mater. 2013, 25, 53, 6213 [2] R. Capelli, S. Toffanin, G. Generali, H. Usta, A. Facchetti, M. Muccini, Nature Materials 2010, 9, 496 [3] T. Takenobu, S. Z. Bisri, T. Takahashi, M. Yahiro, C. Adachi, Y. Iwasa, Phys. Rev. Lett. 2008, 100, 066601 [4] H. Nakanotani, M. Yahiro, C. Adachi, K. Yano, Appl. Phys. Lett. 2007, 90, 262104 [5] K. Muhieddine, M. Ullah, B. N. Pal, P. Burn E. B. Namdas, Adv. Mater. 2014, 26,37, 6410

  13. Optimal nitrogen and phosphorus codoping carbon dots towards white light-emitting device

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Feng; Wang, Yaling; Miao, Yanqin

    Through a one-step fast microwave-assisted approach, nitrogen and phosphorus co-doped carbon dots (N,P-CDs) were synthesized using ammonium citrate (AC) as a carbon source and phosphates as additive reagent. Under the condition of an optimal reaction time of 140 s, the influence of additive with different N and P content on fluorescent performance of N,P-CDs was further explored. It was concluded that high nitrogen content and moderate phosphorus content are necessary for obtaining high quantum yield (QY) N,P-CDs, among which the TAP-CDs (CDs synthesized using ammonium phosphate as additive reagent) show high quantum yield (QY) of 62% and red-green-blue (RGB) spectral compositionmore » of 51.67%. Besides, the TAP-CDs exhibit satisfying thermal stability within 180 °C. By virtue of good optical and thermal properties of TAP-CDs, a white light-emitting device (LED) was fabricated by combining ultraviolet chip with TAP-CDs as phosphor. The white LED emits bright warm-white light with the CIE chromaticity coordinate of (0.38, 0.35) and the corresponding color temperature (CCT) of 4450 K, indicating the potential of TAP-CDs phosphor in white LED.« less

  14. Long Persistent Light Emitting Diode Indicators

    ERIC Educational Resources Information Center

    Jia, Dongdong; Ma, Yiwei; Hunter, D. N.

    2007-01-01

    An undergraduate laboratory was designed for undergraduate students to make long persistent light emitting diode (LED) indicators using phosphors. Blue LEDs, which emit at 465 nm, were characterized and used as an excitation source. Long persistent phosphors, SrAl[subscript 2]O[subscript 4]:Eu[superscript 2+],Dy[superscript 3+] (green) and…

  15. Synthesis and characterization of pure and Li⁺ activated Alq₃ complexes for green and blue organic light emitting diodes and display devices.

    PubMed

    Bhagat, S A; Borghate, S V; Kalyani, N Thejo; Dhoble, S J

    2014-08-01

    Pure and Li(+)-doped Alq3 complexes were synthesized by simple precipitation method at room temperature, maintaining the stoichiometric ratio. These complexes were characterized by X-ray diffraction, ultraviolet-visible absorption and Fourier transform infrared and photoluminescence (PL) spectra. X-ray diffraction analysis reveals the crystalline nature of the synthesized complexes, while Fourier transform infrared spectroscopy confirm the molecular structure, the completion of quinoline ring formation and presence of quinoline structure in the metal complex. Ultraviolet-visible and PL spectra revealed that Li(+) activated Alq3 complexes exhibit the highest intensity in comparison to pure Alq3 phosphor. Thus, Li(+) enhances PL emission intensity when doped into Alq3 phosphor. The excitation spectra lie in the range of 383-456 nm. All the synthesized complexes other than Liq give green emission, while Liq gives blue emission with enhanced intensity. Thus, he synthesized phosphors are the best suitable candidates for green- and blue-emitting organic light emitting diode, PL liquid-crystal display and solid-state lighting applications. Copyright © 2013 John Wiley & Sons, Ltd.

  16. A comparison of commercial light-emitting diode baited suction traps for surveillance of Culicoides in northern Europe.

    PubMed

    Hope, Andrew; Gubbins, Simon; Sanders, Christopher; Denison, Eric; Barber, James; Stubbins, Francesca; Baylis, Matthew; Carpenter, Simon

    2015-04-22

    The response of Culicoides biting midges (Diptera: Ceratopogonidae) to artificial light sources has led to the use of light-suction traps in surveillance programmes. Recent integration of light emitting diodes (LED) in traps improves flexibility in trapping through reduced power requirements and also allows the wavelength of light used for trapping to be customized. This study investigates the responses of Culicoides to LED light-suction traps emitting different wavelengths of light to make recommendations for use in surveillance. The abundance and diversity of Culicoides collected using commercially available traps fitted with Light Emitting Diode (LED) platforms emitting ultraviolet (UV) (390 nm wavelength), blue (430 nm), green (570 nm), yellow (590 nm), red (660 nm) or white light (425 nm - 750 nm with peaks at 450 nm and 580 nm) were compared. A Centre for Disease Control (CDC) UV light-suction trap was also included within the experimental design which was fitted with a 4 watt UV tube (320-420 nm). Generalised linear models with negative binomial error structure and log-link function were used to compare trap abundance according to LED colour, meteorological conditions and seasonality. The experiment was conducted over 49 nights with 42,766 Culicoides caught in 329 collections. Culicoides obsoletus Meigen and Culicoides scoticus Downes and Kettle responded indiscriminately to all wavelengths of LED used with the exception of red which was significantly less attractive. In contrast, Culicoides dewulfi Goetghebuer and Culicoides pulicaris Linnaeus were found in significantly greater numbers in the green LED trap than in the UV LED trap. The LED traps collected significantly fewer Culicoides than the standard CDC UV light-suction trap. Catches of Culicoides were reduced in LED traps when compared to the standard CDC UV trap, however, their reduced power requirement and small size fulfils a requirement for trapping in logistically challenging areas or where many

  17. Light shift from ultraviolet to near infrared light: Cerenkov luminescence with gold nanocluster - near infrared (AuNc-NIR) conjugates

    NASA Astrophysics Data System (ADS)

    Yoo, Su Woong; Mun, Hyoyoung; Oh, Gyungseok; Ryu, Youngjae; Kim, Min-Gon; Chung, Euiheon

    2015-03-01

    Cerenkov luminescence (CL) is generated when a charged particle moves faster than the speed of light in dielectric media. Recently CL imaging becomes an emerging technique with the use of radioisotopes. However, due to relatively weak blue light production and massive tissue attenuation, CL has not been applied widely. Therefore, we attempted to shift the CL emission to more near infrared (NIR) spectrum for better tissue penetration by using Cerenkov Radiation Energy Transfer (CRET). Gold nanoclusters were conjugated with NIR dye molecules (AuNc-IR820 and AuNc-ICG) to be activated with ultraviolet light. We found optimal conjugate concentrations of AuNc-NIR conjugates by spectroscopy system to generate maximal photon emission. When exposed by ultraviolet light, the emission of NIR light from the conjugates were verified. In quantitative analysis, AuNc-NIR conjugates emit brighter light signal than pure AuNc. This result implies that NIR fluorescent dyes (both IR820 and ICG) can be excited by the emission from AuNc. Following the above baseline experiment, we mixed F-18 fluorodeoxyglucose (F-18 FDG) radioisotope to the AuNc- NIR conjugates, to confirm NIR emission induced from Cerenkov radiation. Long pass filter was used to block Cerenkov luminescence and to collect the emission from AuNc-NIR conjugates. Instead of one long exposure imaging with CCD, we used multiple frame scheme to eliminate gamma radiation strike in each frame prior to combination. In summary, we obtained NIR emission light from AuNc-NIR conjugated dyes that is induced from CL. We plan to perform in vivo small animal imaging with these conjugates to assess better tissue penetration.

  18. White-light-emitting supramolecular gels.

    PubMed

    Praveen, Vakayil K; Ranjith, Choorikkat; Armaroli, Nicola

    2014-01-07

    Let there be light, let it be white: Recent developments in the use of chromophore-based gels as scaffolds for the assembly of white-light-emitting soft materials have been significant. The main advantage of this approach lies in the facile accommodation of selected luminescent components within the gel. Excitation-energy-transfer processes between these components ultimately generate the desired light output. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  19. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei

    ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

  20. Single crystalline ZnO radial homojunction light-emitting diodes fabricated by metalorganic chemical vapour deposition

    DOE PAGES

    Yoo, Jinkyoung; Ahmed, Towfiq; Tang, Wei; ...

    2017-09-05

    ZnO radial p–n junction architecture has the potential for forward-leap of light-emitting diode (LED) technology in terms of higher efficacy and economical production. Here, we report on ZnO radial p–n junction-based light emitting diodes prepared by full metalorganic chemical vapour deposition (MOCVD) with hydrogen-assisted p-type doping approach. The p-type ZnO(P) thin films were prepared by MOCVD with the precursors of dimethylzinc, tert-butanol, and tertiarybutylphosphine. Controlling the precursor flow for dopant results in the systematic change of doping concentration, Hall mobility, and electrical conductivity. Moreover, the approach of hydrogen-assisted phosphorous doping in ZnO expands the understanding of doping behaviour in ZnO.more » Ultraviolet and visible electroluminescence of ZnO radial p–n junction was demonstrated through a combination of position-controlled nano/microwire and crystalline p-type ZnO(P) radial shell growth on the wires. Lastly, the reported research opens a pathway of realisation of production-compatible ZnO p–n junction LEDs.« less

  1. The Light-Emitting Diode as a Light Detector

    ERIC Educational Resources Information Center

    Baird, William H.; Hack, W. Nathan; Tran, Kiet; Vira, Zeeshan; Pickett, Matthew

    2011-01-01

    A light-emitting diode (LED) and operational amplifier can be used as an affordable method to provide a digital output indicating detection of an intense light source such as a laser beam or high-output LED. When coupled with a microcontroller, the combination can be used as a multiple photogate and timer for under $50. A similar circuit is used…

  2. Efficient and bright organic light-emitting diodes on single-layer graphene electrodes

    NASA Astrophysics Data System (ADS)

    Li, Ning; Oida, Satoshi; Tulevski, George S.; Han, Shu-Jen; Hannon, James B.; Sadana, Devendra K.; Chen, Tze-Chiang

    2013-08-01

    Organic light-emitting diodes are emerging as leading technologies for both high quality display and lighting. However, the transparent conductive electrode used in the current organic light-emitting diode technologies increases the overall cost and has limited bendability for future flexible applications. Here we use single-layer graphene as an alternative flexible transparent conductor, yielding white organic light-emitting diodes with brightness and efficiency sufficient for general lighting. The performance improvement is attributed to the device structure, which allows direct hole injection from the single-layer graphene anode into the light-emitting layers, reducing carrier trapping induced efficiency roll-off. By employing a light out-coupling structure, phosphorescent green organic light-emitting diodes exhibit external quantum efficiency >60%, while phosphorescent white organic light-emitting diodes exhibit external quantum efficiency >45% at 10,000 cd m-2 with colour rendering index of 85. The power efficiency of white organic light-emitting diodes reaches 80 lm W-1 at 3,000 cd m-2, comparable to the most efficient lighting technologies.

  3. Towards fully spray coated organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Gilissen, Koen; Stryckers, Jeroen; Manca, Jean; Deferme, Wim

    2014-10-01

    Pi-conjugated polymer light emitting devices have the potential to be the next generation of solid state lighting. In order to achieve this goal, a low cost, efficient and large area production process is essential. Polymer based light emitting devices are generally deposited using techniques based on solution processing e.g.: spin coating, ink jet printing. These techniques are not well suited for cost-effective, high throughput, large area mass production of these organic devices. Ultrasonic spray deposition however, is a deposition technique that is fast, efficient and roll to roll compatible which can be easily scaled up for the production of large area polymer light emitting devices (PLEDs). This deposition technique has already successfully been employed to produce organic photovoltaic devices (OPV)1. Recently the electron blocking layer PEDOT:PSS2 and metal top contact3 have been successfully spray coated as part of the organic photovoltaic device stack. In this study, the effects of ultrasonic spray deposition of polymer light emitting devices are investigated. For the first time - to our knowledge -, spray coating of the active layer in PLED is demonstrated. Different solvents are tested to achieve the best possible spray-able dispersion. The active layer morphology is characterized and optimized to produce uniform films with optimal thickness. Furthermore these ultrasonic spray coated films are incorporated in the polymer light emitting device stack to investigate the device characteristics and efficiency. Our results show that after careful optimization of the active layer, ultrasonic spray coating is prime candidate as deposition technique for mass production of PLEDs.

  4. Effect of ultraviolet light on mood, depressive disorders and well-being.

    PubMed

    Veleva, Bistra I; van Bezooijen, Rutger L; Chel, Victor G M; Numans, Mattijs E; Caljouw, Monique A A

    2018-06-01

    Human and animal studies have shown that exposure to ultraviolet light can incite a chain of endocrine, immunologic, and neurohumoral reactions that might affect mood. This review focuses on the evidence from clinical trials and observational studies on the effect of ultraviolet light on mood, depressive disorders, and well-being. A search was made in PubMed, Embase, Web of Science, Cochrane, Psychinfo, CINAHL, Academic Search Premier and Science Direct, and the references of key papers, for clinical trials and observational studies describing the effect of ultraviolet light applied to skin or eyes on mood, depressive disorders, and well-being. Of the seven studies eligible for this review, the effect of ultraviolet light on mood, depressive symptoms and seasonal affective disorders was positive in six of them. Of the seven studies, six demonstrated benefit of exposure to ultraviolet radiation and improvement in mood which supports a positive effect of ultraviolet light on mood. Because of the small number of the studies and their heterogeneity, more research is warranted to confirm and document this correlation. © 2018 The Authors. Photodermatology, Photoimmunology & Photomedicine Published by John Wiley & Sons Ltd.

  5. Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

    NASA Astrophysics Data System (ADS)

    Liang, Yu-Han

    Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to

  6. Stable blue phosphorescent organic light emitting devices

    DOEpatents

    Forrest, Stephen R.; Thompson, Mark; Giebink, Noel

    2014-08-26

    Novel combination of materials and device architectures for organic light emitting devices is provided. An organic light emitting device, is provided, having an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer includes a host and a phosphorescent emissive dopant having a peak emissive wavelength less than 500 nm, and a radiative phosphorescent lifetime less than 1 microsecond. Preferably, the phosphorescent emissive dopant includes a ligand having a carbazole group.

  7. Polarized micro-cavity organic light-emitting devices.

    PubMed

    Park, Byoungchoo; Kim, Mina; Park, Chan Hyuk

    2009-04-27

    We present the results of a study of light emissions from a polarized micro-cavity Organic Light-Emitting Device (OLED), which consisted of a flexible, anisotropic one-dimensional (1-D) photonic crystal (PC) film substrate. It is shown that luminous Electroluminescent (EL) emissions from the polarized micro-cavity OLED were produced at relatively low operating voltages. It was also found that the peak wavelengths of the emitted EL light corresponded to the two split eigen modes of the high-energy band edges of the anisotropic PC film, with a strong dependence on the polarization state of the emitting light. For polarization along the ordinary axis of the anisotropic PC film, the optical split micro-cavity modes occurred at the longer high-energy photonic band gap (PBG) edge, while for polarization along the extraordinary axis, the split micro-cavity modes occurred at the shorter high-energy PBG edge, with narrow bandwidths. We demonstrated that the polarization and emission mode of the micro-cavity OLED may be selected by choosing the appropriate optical axis of the anisotropic 1-D PC film.

  8. Enhanced out-coupling efficiency of organic light-emitting diodes using an nanostructure imprinted by an alumina nanohole array

    NASA Astrophysics Data System (ADS)

    Endo, Kuniaki; Adachi, Chihaya

    2014-03-01

    We demonstrate organic light-emitting diodes (OLEDs) with enhanced out-coupling efficiency containing nanostructures imprinted by an alumina nanohole array template that can be applied to large-emitting-area and flexible devices using a roll-to-roll process. The nanostructures are imprinted on a glass substrate by an ultraviolet nanoimprint process using an alumina nanohole array mold and then an OLED is fabricated on the nanostructures. The enhancement of out-coupling efficiency is proportional to the root-mean-square roughness of the nanostructures, and a maximum improvement of external electroluminescence quantum efficiency of 17% is achieved. The electroluminescence spectra of the OLEDs indicate that this improvement is caused by enhancement of the out-coupling of surface plasmon polaritons.

  9. Luminescent carbon quantum dots with high quantum yield as a single white converter for white light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Feng, X. T.; Zhang, Y.; Liu, X. G., E-mail: liuxuguang@tyut.edu.cn

    Carbon quantum dots (CQDs) with high quantum yield (51.4%) were synthesized by a one-step hydrothermal method using thiosalicylic acid and ethylenediamine as precursor. The CQDs have the average diameter of 2.3 nm and possess excitation-independent emission wavelength in the range from 320 to 440 nm excitation. Under an ultraviolet (UV) excitation, the CQDs aqueous solutions emit bright blue fluorescence directly and exhibit broad emission with a high spectral component ratio of 67.4% (blue to red intensity to total intensity). We applied the CQDs as a single white-light converter for white light emitting diodes (WLEDs) using a UV-LED chip as the excitation lightmore » source. The resulted WLED shows superior performance with corresponding color temperature of 5227 K and the color coordinates of (0.34, 0.38) belonging to the white gamut.« less

  10. Broadband mid-infrared superlattice light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Ricker, R. J.; Provence, S. R.; Norton, D. T.; Boggess, T. F.; Prineas, J. P.

    2017-05-01

    InAs/GaSb type-II superlattice light-emitting diodes were fabricated to form a device that provides emission over the entire 3-5 μm mid-infrared transmission window. Variable bandgap emission regions were coupled together using tunnel junctions to emit at peak wavelengths of 3.3 μm, 3.5 μm, 3.7 μm, 3.9 μm, 4.1 μm, 4.4 μm, 4.7 μm, and 5.0 μm. Cascading the structure recycles the electrons in each emission region to emit several wavelengths simultaneously. At high current densities, the light-emitting diode spectra broadened into a continuous, broadband spectrum that covered the entire mid-infrared band. When cooled to 77 K, radiances of over 1 W/cm2 sr were achieved, demonstrating apparent temperatures above 1000 K over the 3-5 μm band. InAs/GaSb type-II superlattices are capable of emitting from 3 μm to 30 μm, and the device design can be expanded to include longer emission wavelengths.

  11. Light Extraction From Solution-Based Processable Electrophosphorescent Organic Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Krummacher, Benjamin C.; Mathai, Mathew; So, Franky; Choulis, Stelios; Choong, And-En, Vi

    2007-06-01

    Molecular dye dispersed solution processable blue emitting organic light-emitting devices have been fabricated and the resulting devices exhibit efficiency as high as 25 cd/A. With down-conversion phosphors, white emitting devices have been demonstrated with peak efficiency of 38 cd/A and luminous efficiency of 25 lm/W. The high efficiencies have been a product of proper tuning of carrier transport, optimization of the location of the carrier recombination zone and, hence, microcavity effect, efficient down-conversion from blue to white light, and scattering/isotropic remission due to phosphor particles. An optical model has been developed to investigate all these effects. In contrast to the common misunderstanding that light out-coupling efficiency is about 22% and independent of device architecture, our device data and optical modeling results clearly demonstrated that the light out-coupling efficiency is strongly dependent on the exact location of the recombination zone. Estimating the device internal quantum efficiencies based on external quantum efficiencies without considering the device architecture could lead to erroneous conclusions.

  12. Calibration of a microchannel plate based extreme ultraviolet grazing incident spectrometer at the Advanced Light Source

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Bakeman, M. S.; Lawrence Berkeley National Laboratory, Berkeley, California 94720; Tilborg, J. van

    We present the design and calibration of a microchannel plate based extreme ultraviolet spectrometer. Calibration was performed at the Advance Light Source (ALS) at the Lawrence Berkeley National Laboratory (LBNL). This spectrometer will be used to record the single shot spectrum of radiation emitted by the tapered hybrid undulator (THUNDER) undulator installed at the LOASIS GeV-class laser-plasma-accelerator. The spectrometer uses an aberration-corrected concave grating with 1200 lines/mm covering 11-62 nm and a microchannel plate detector with a CsI coated photocathode for increased quantum efficiency in the extreme ultraviolet. A touch screen interface controls the grating angle, aperture size, and placementmore » of the detector in vacuum, allowing for high-resolution measurements over the entire spectral range.« less

  13. Light-emitting block copolymers composition, process and use

    DOEpatents

    Ferraris, John P.; Gutierrez, Jose J.

    2006-11-14

    Generally, and in one form, the present invention is a composition of light-emitting block copolymer. In another form, the present invention is a process producing a light-emitting block copolymers that intends polymerizing a first di(halo-methyl) aromatic monomer compound in the presence of an anionic initiator and a base to form a polymer and contacting a second di(halo-methyl) aromatic monomer compound with the polymer to form a homopolymer or block copolymer wherein the block copolymer is a diblock, triblock, or star polymer. In yet another form, the present invention is an electroluminescent device comprising a light-emitting block copolymer, wherein the electroluminescent device is to be used in the manufacturing of optical and electrical devices.

  14. Oxycarbonitride phosphors and light emitting devices using the same

    DOEpatents

    Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

    2013-10-08

    Disclosed herein is a novel family of oxycarbidonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbidonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

  15. Oxycarbonitride phosphors and light emitting devices using the same

    DOEpatents

    Li, Yuanqiang; Romanelli, Michael Dennis; Tian, Yongchi

    2014-07-08

    Disclosed herein is a novel family of oxycarbonitride phosphor compositions and light emitting devices incorporating the same. Within the sextant system of M--Al--Si--O--N--C--Ln and quintuplet system of M--Si--O--N--C--Ln (M=alkaline earth element, Ln=rare earth element), the phosphors are composed of either one single crystalline phase or two crystalline phases with high chemical and thermal stability. In certain embodiments, the disclosed phosphor of silicon oxycarbonitrides emits green light at wavelength between 530-550 nm. In further embodiments, the disclosed phosphor compositions emit blue-green to yellow light in a wavelength range of 450-650 nm under near-UV and blue light excitation.

  16. Organic emitters: Light-emitting fabrics

    NASA Astrophysics Data System (ADS)

    Ortí, Enrique; Bolink, Henk J.

    2015-04-01

    Light-emitting fibres that suit integration with textiles are prepared by dip-coating a steel wire with an electroluminescent material and then cleverly wrapping the structure with a carbon nanotube sheet that functions as a transparent electrode.

  17. Alternating Current Driven Organic Light Emitting Diodes Using Lithium Fluoride Insulating Layers

    PubMed Central

    Liu, Shang-Yi; Chang, Jung-Hung; -Wen Wu, I.; Wu, Chih-I

    2014-01-01

    We demonstrate an alternating current (AC)-driven organic light emitting diodes (OLED) with lithium fluoride (LiF) insulating layers fabricated using simple thermal evaporation. Thermal evaporated LiF provides high stability and excellent capacitance for insulating layers in AC devices. The device requires a relatively low turn-on voltage of 7.1 V with maximum luminance of 87 cd/m2 obtained at 10 kHz and 15 Vrms. Ultraviolet photoemission spectroscopy and inverse photoemission spectroscopy are employed simultaneously to examine the electronic band structure of the materials in AC-driven OLED and to elucidate the operating mechanism, optical properties and electrical characteristics. The time-resolved luminance is also used to verify the device performance when driven by AC voltage. PMID:25523436

  18. Combinational light emitting diode-high frequency focused ultrasound treatment for HeLa cell.

    PubMed

    Choe, Se-Woon; Park, Kitae; Park, Chulwoo; Ryu, Jaemyung; Choi, Hojong

    2017-12-01

    Light sources such as laser and light emitting diode or ultrasound devices have been widely used for cancer therapy and regenerative medicines, since they are more cost-effective and less harmful than radiation therapy, chemotherapy or magnetic treatment. Compared to laser and low intensity ultrasound techniques, light emitting diode and high frequency focused ultrasound shows enhanced therapeutic effects, especially for small tumors. We propose combinational light emitting diode-high frequency focused ultrasound treatment for human cervical cancer HeLa cells. Individual red, green, and blue light emitting diode light only, high frequency focused ultrasound only, or light emitting diode light combined with high frequency focused ultrasound treatments were applied in order to characterize the responses of HeLa cells. Cell density exposed by blue light emitting diode light combined with high frequency focused ultrasound (2.19 ± 0.58%) was much lower than that of cells exposed by red and green light emitting diode lights (81.71 ± 9.92% and 61.81 ± 4.09%), blue light emitting diode light (11.19 ± 2.51%) or high frequency focused ultrasound only (9.72 ± 1.04%). We believe that the proposed combinational blue light emitting diode-high frequency focused ultrasound treatment could have therapeutic benefits to alleviate cancer cell proliferation.

  19. Nanocluster-based white-light-emitting material employing surface tuning

    DOEpatents

    Wilcoxon, Jess P [Albuquerque, NM; Abrams, Billie L [Albuquerque, NM; Thoma, Steven G [Albuquerque, NM

    2007-06-26

    A method for making a nanocrystal-based material capable of emitting light over a sufficiently broad spectral range to appear white. Surface-modifying ligands are used to shift and broaden the emission of semiconductor nanocrystals to produce nanoparticle-based materials that emit white light.

  20. Controlled electroluminescence of n-ZnMgO/p-GaN light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Goh, E. S. M.; Yang, H. Y.; Han, Z. J.; Chen, T. P.; Ostrikov, K.

    2012-12-01

    Effective control of room-temperature electroluminescence of n-ZnMgO/p-GaN light-emitting diodes (LEDs) over both emission intensity and wavelength is demonstrated. With varied Mg concentration, the intensity of LEDs in the near-ultraviolet region is increased due to the effective radiative recombination in the ZnMgO layer. Furthermore, the emission wavelength is shifted to the green/yellow spectral region by employing an indium-tin-oxide thin film as the dopant source, where thermally activated indium diffusion creates extra deep defect levels for carrier recombination. These results clearly demonstrate the effectiveness of controlled metal incorporation in achieving high energy efficiency and spectral tunability of the n-ZnMgO/p-GaN LED devices.

  1. Rapid microwave-assisted synthesis of highly luminescent nitrogen-doped carbon dots for white light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Wang, Yaling; Zheng, Jingxia; Wang, Junli; Yang, Yongzhen; Liu, Xuguang

    2017-11-01

    Highly luminescent nitrogen-doped carbon dots (N-CDs) were synthesized rapidly by one-step microwave-assisted hydrothermal method using citric acid as carbon source and ethylenediamine as dopant. The influences of reaction temperature, reaction time and raw material ratio on the fluorescence performance of N-CDs were investigated. Then N-CDs with the highest quantum yield were selected as fluorescent materials for fabricating white light-emitting diodes (LEDs). Highly luminescent N-CDs with the quantum yield of 75.96% and blue-to-red spectral composition of 51.48% were obtained at the conditions of 180 °C, 8 min and the molar ratio of citric acid to ethylenediamine 2:1. As-prepared highly luminescent N-CDs have an average size of 6.06 nm, possess extensive oxygen- and nitrogen-containing functional groups on their surface, and exhibit strong absorption in ultraviolet region. White LEDs based on the highly luminescent N-CDs emit warm white light with color coordinates of (0.42, 0.40) and correlated color temperature of 3416 K.

  2. Aluminum-nanodisc-induced collective lattice resonances: Controlling the light extraction in organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Auer-Berger, Manuel; Tretnak, Veronika; Wenzl, Franz-Peter; Krenn, Joachim R.; List-Kratochvil, Emil J. W.

    2017-10-01

    We examine aluminum-nanodisc-induced collective lattice resonances as a means to enhance the efficiency of organic light emitting diodes. Thus, nanodisc arrays were embedded in the hole transporting layer of a solution-processed phosphorescent organic blue-light emitting diode. Through extinction spectroscopy, we confirm the emergence of array-induced collective lattice resonances within the organic light emitting diode. Through finite-difference time domain simulations, we show that the collective lattice resonances yield an enhancement of the electric field intensity within the emissive layer. The effectiveness for improving the light generation and light outcoupling is demonstrated by electro-optical characterization, realizing a gain in a current efficiency of 35%.

  3. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih

    Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

  4. Design of p-type cladding layers for tunnel-injected UV-A light emitting diodes

    DOE PAGES

    Zhang, Yuewei; Krishnamoorthy, Sriram; Akyol, Fatih; ...

    2016-11-09

    Here, we discuss the engineering of p-AlGaN cladding layers for achieving efficient tunnel-injected III-Nitride ultraviolet light emitting diodes (UV LEDs) in the UV-A spectral range. We show that the capacitance-voltage measurements can be used to estimate the compensation and doping in the p-AlGaN layers located between the multi-quantum well region and the tunnel junction layer. By increasing the p-type doping concentration to overcome the background compensation, on-wafer external quantum efficiency and wall-plug efficiency of 3.37% and 1.62%, respectively, were achieved for the tunnel-injected UV LEDs emitting at 325 nm. We also show that interband tunneling hole injection can be usedmore » to realize UV LEDs without any acceptor doping. The work discussed here provides new understanding of hole doping and transport in AlGaN-based UV LEDs and demonstrates the excellent performance of tunnel-injected LEDs for the UV-A wavelength range.« less

  5. Assessment of the performance of light-emitting diode roadway lighting technology.

    DOT National Transportation Integrated Search

    2015-10-01

    This study, championed by the Virginia Department of Transportation (VDOT) Traffic Engineering : Division, involved a thorough investigation of light-emitting diode (LED) roadway lighting technology by : testing six types of roadway luminaires (inclu...

  6. Monolithically integrated Si gate-controlled light-emitting device: science and properties

    NASA Astrophysics Data System (ADS)

    Xu, Kaikai

    2018-02-01

    The motivation of this study is to develop a p-n junction based light emitting device, in which the light emission is conventionally realized using reverse current driving, by voltage driving. By introducing an additional terminal of insulated gate for voltage driving, a novel three-terminal Si light emitting device is described where both the light intensity and spatial light pattern of the device are controlled by the gate voltage. The proposed light emitting device employs injection-enhanced Si in avalanche mode where electric field confinement occurs in the corner of a reverse-biased p+n junction. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage or the reverse-bias. Since the light emission is based on the avalanching mode, the Si light emitting device offers the potential for very large scale integration-compatible light emitters for inter- or intra-chip signal transmission and contactless functional testing of wafers.

  7. Near-infrared light emitting device using semiconductor nanocrystals

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Supran, Geoffrey J.S.; Song, Katherine W.; Hwang, Gyuweon

    A near-infrared light emitting device can include semiconductor nanocrystals that emit at wavelengths beyond 1 .mu.m. The semiconductor nanocrystals can include a core and an overcoating on a surface of the core.

  8. Organic light emitting diode with surface modification layer

    DOEpatents

    Basil, John D.; Bhandari, Abhinav; Buhay, Harry; Arbab, Mehran; Marietti, Gary J.

    2017-09-12

    An organic light emitting diode (10) includes a substrate (12) having a first surface (14) and a second surface (16), a first electrode (32), and a second electrode (38). An emissive layer (36) is located between the first electrode (32) and the second electrode (38). The organic light emitting diode (10) further includes a surface modification layer (18). The surface modification layer (18) includes a non-planar surface (30, 52).

  9. Flexible, liquid core light guide with focusing and light shaping attachments

    DOEpatents

    Wojcik, Randolph Frank; Majewski, Stanislaw; Zorn, Carl John; Kross, Brian

    1999-01-01

    A liquid light guide system for ultraviolet light is disclosed that has a light shaping arrangement for the emitted light, a stable liquid core and sheath and reliable and effective end closures. The end closures include a metal crimping arrangement that utilizes two layers of deformable materials to prevent cracking of endplugs.

  10. Light-emitting device test systems

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    McCord, Mark; Brodie, Alan; George, James

    Light-emitting devices, such as LEDs, are tested using a photometric unit. The photometric unit, which may be an integrating sphere, can measure flux, color, or other properties of the devices. The photometric unit may have a single port or both an inlet and outlet. Light loss through the port, inlet, or outlet can be reduced or calibrated for. These testing systems can provide increased reliability, improved throughput, and/or improved measurement accuracy.

  11. Chip-scale white flip-chip light-emitting diode containing indium phosphide/zinc selenide quantum dots

    NASA Astrophysics Data System (ADS)

    Fan, Bingfeng; Yan, Linchao; Lao, Yuqin; Ma, Yanfei; Chen, Zimin; Ma, Xuejin; Zhuo, Yi; Pei, Yanli; Wang, Gang

    2017-08-01

    A method for preparing a quantum dot (QD)-white light-emitting diode (WLED) is reported. Holes were etched in the SiO2 layer deposited on the sapphire substrate of the flip-chip LED by inductively coupled plasma, and these holes were then filled with QDs. An ultraviolet-curable resin was then spin-coated on top of the QD-containing SiO2 layer, and the resin was cured to act as a protecting layer. The reflective sidewall structure minimized sidelight leakage. The fabrication of the QD-WLED is simple in preparation and compatible with traditional LED processes, which was the minimum size of the WLED chip-scale integrated package. InP/ZnS core-shell QDs were used as the converter in the WLED. A blue light-emitting diode with a flip-chip structure was used as the excitation source. The QD-WLED exhibited color temperatures from 5900 to 6400 K and Commission Internationale De L'Elcairage color coordinates from (0.315, 0.325) to (0.325, 0.317), under drive currents from 100 to 400 mA. The QD-WLED exhibited stable optoelectronic properties.

  12. GALEX 1st Light Far Ultraviolet

    NASA Technical Reports Server (NTRS)

    2003-01-01

    This image was taken May 21 and 22 by NASA's Galaxy Evolution Explorer. The image was made from data gathered by the far ultraviolet channel of the spacecraft camera during the mission's 'first light' milestone. It shows about 400 celestial objects, appearing in blue, detected over a 3-minute, 20-second period in the constellation Hercules.

    The Galaxy Evolution Explorer's first light images are dedicated to the crew of the Space Shuttle Columbia. The Hercules region was directly above Columbia when it made its last contact with NASA Mission Control on February 1, over the skies of Texas.

    The Galaxy Evolution Explorer launched on April 28 on a mission to map the celestial sky in the ultraviolet and determine the history of star formation in the universe over the last 10 billion years.

  13. Flexible, liquid core light guide with focusing and light shaping attachments

    DOEpatents

    Wojcik, R.F.; Majewski, S.; Zorn, C.J.; Kross, B.

    1999-04-20

    A liquid light guide system for ultraviolet light is disclosed that has a light shaping arrangement for the emitted light, a stable liquid core and sheath and reliable and effective end closures. The end closures include a metal crimping arrangement that utilizes two layers of deformable materials to prevent cracking of endplugs. 19 figs.

  14. A tunable lighting system integrated by inorganic and transparent organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Jing-jing; Zhang, Tao; Jin, Ya-fang; Liu, Shi-shen; Yuan, Shi-dong; Cui, Zhao; Zhang, Li; Wang, Wei-hui

    2014-05-01

    A tunable surface-emitting integrated lighting system is constructed using a combination of inorganic light-emitting diodes (LEDs) and transparent organic LEDs (OLEDs). An RB two-color LED is used to supply red and blue light emission, and a green organic LED is used to supply green light emission. Currents of the LED and OLED are tuned to produce a white color, showing different Commission Internationale d'Eclairage (CIE) chromaticity coordinates and correlated color temperatures with a wide adjustable range. Such an integration can compensate for the lack of the LED's luminance uniformity and the transparent OLED's luminance intensity.

  15. Environmental barrier material for organic light emitting device and method of making

    DOEpatents

    Graff, Gordon L [West Richland, WA; Gross, Mark E [Pasco, WA; Affinito, John D [Kennewick, WA; Shi, Ming-Kun [Richland, WA; Hall, Michael [West Richland, WA; Mast, Eric [Richland, WA

    2003-02-18

    An encapsulated organic light emitting device. The device includes a first barrier stack comprising at least one first barrier layer and at least one first polymer layer. There is an organic light emitting layer stack adjacent to the first barrier stack. A second barrier stack is adjacent to the organic light emitting layer stack. The second barrier stack has at least one second barrier layer and at least one second polymer layer. A method of making the encapsulated organic light emitting device is also provided.

  16. Porous light-emitting compositions

    DOEpatents

    Burrell, Anthony K [Los Alamos, NM; McCleskey, Thomas Mark [Los Alamos, NM; Jia, Quanxi [Los Alamos, NM; Bauer, Eve [Los Alamos, NM; Mueller, Alexander H [Los Alamos, NM

    2012-04-17

    Light-emitting devices are prepared by coating a porous substrate using a polymer-assisted deposition process. Solutions of metal precursor and soluble polymers having binding properties for metal precursor were coated onto porous substrates. The coated substrates were heated at high temperatures under a suitable atmosphere. The result was a substrate with a conformal coating that did not substantially block the pores of the substrate.

  17. Polyfluorene light-emitting devices and amorphous silicon:hydrogen TFT pixel circuits for active-matrix organic light-emitting displays

    NASA Astrophysics Data System (ADS)

    He, Yi

    2000-10-01

    Organic light-emitting devices (OLEDs) made of single-layer and double-layer polymer thin films have been fabricated and studied. The hole transporting (polymer A) and emissive (polymer B) polymers were poly(9,9' -dioctyl fluorene-2,7-diyl)-co-poly(diphenyl-p-tolyl-amine-4,4 '-diyl) and poly(9,9'-dioctyl fluorene-2,7-diyl)-co-poly(benzothiadiazole 2,5-diyl), respectively. The optical bandgaps of polymer A and B were 2.72 and 2.82 eV, respectively. The photoluminescence (PL) peaks for polymer A and B were 502 and 546 nm, respectively. The electroluminescence (EL) peak for polymer B was 547 nm. No EL has been observed from polymer A single layer OLEDs. To obtain the spectral distribution of the emission properties of the light-emitting devices, a new light-output measurement technique was developed. Using this technique, the spectral distribution of the luminance, radiance, photon density emission can be obtained. Moreover, the device external quantum efficiency calculated using this technique is accurate and insensitive to the light emission spectrum shape. Organic light-emitting devices have been fabricated and studied on both glass and flexible plastic substrates. The OLEDs showed a near-linear relationship between the luminance and the applied current density over four orders of magnitude. For the OLEDs fabricated on the glass substrate, luminance ˜9,300 cd/m2, emission efficiency ˜14.5 cd/A, luminescence power efficiency ˜2.26 lm/W, and external quantum efficiency ˜3.85% have been achieved. For the OLEDs fabricated on the flexible plastic substrates, both aluminum and calcium were used as cathode materials. The achieved maximum OLED luminance, emission efficiency, luminescence power efficiency, and external quantum efficiency were ˜13,000 cd/m2, ˜66.1 cd/A, ˜17.2 lm/W, and 16.7%, respectively. To make an active-matrix organic light-emitting display (AM-OLED), a two-TFT pixel electrode circuit was designed and fabricated based on amorphous silicon TFT

  18. Spectral broadening in electroluminescence of white organic light-emitting diodes based on complementary colors

    NASA Astrophysics Data System (ADS)

    Kim, Young Min; Park, Young Wook; Choi, Jin Hwan; Ju, Byeong Kwon; Jung, Jae Hoon; Kim, Jai Kyeong

    2007-01-01

    The authors report the optical and electroluminescent (EL) properties of white organic light-emitting diodes (OLEDs) which have two emitters with similar structures: 1, 1, 4, 4-tetraphenyl-1, 3-butadiene and 2,9-dimethyl-4,7-diphenyl-1,10-phenanthroline have an emission peak of 400nm around the near ultraviolet, and tris-(8-hydroxyquinoline) aluminum doped with 4-(dicyanomethylene)-2-methyl-6-(p-dimethylaminostyryl)-4H-pyran has an emission peak of 580nm producing a yellow color. The EL spectra of the white OLED have shown a broadening through visual range from 400to780nm. This spectral broadening is related to an exciplex emission at the organic solid interface.

  19. Can the circadian system of a diurnal and a nocturnal rodent entrain to ultraviolet light?

    PubMed

    Hut, R A; Scheper, A; Daan, S

    2000-01-01

    Spectral measurements of sunlight throughout the day show close correspondence between the timing of above ground activity of the European ground squirrel and the presence of ultraviolet light in the solar spectrum. However, in a standard entrainment experiment ground squirrels show no entrainment to ultraviolet light, while Syrian hamsters do entrain under the same protocol. Presented transmittance spectra for lenses, corneas, and vitreous bodies may explain the different results of the entrainment experiment. We found ultraviolet light transmittance in the colourless hamster lens (50% cut-off at 341 nm), but not in the yellow ground squirrel lens (50% cut-off around 493 nm). Ultraviolet sensitivity in the ground squirrels based upon possible fluorescence mechanisms was not evident. Possible functions of ultraviolet lens filters in diurnal mammals are discussed, and compared with nocturnal mammals and diurnal birds. Species of the latter two groups lack ultraviolet filtering properties of their lenses and their circadian system is known to respond to ultraviolet light, a feature that does not necessarily has to depend on ultraviolet photoreceptors. Although the circadian system of several species responds to ultraviolet light, we argue that the role of ultraviolet light as a natural Zeitgeber is probably limited.

  20. Principles of phosphorescent organic light emitting devices.

    PubMed

    Minaev, Boris; Baryshnikov, Gleb; Agren, Hans

    2014-02-07

    Organic light-emitting device (OLED) technology has found numerous applications in the development of solid state lighting, flat panel displays and flexible screens. These applications are already commercialized in mobile phones and TV sets. White OLEDs are of especial importance for lighting; they now use multilayer combinations of organic and elementoorganic dyes which emit various colors in the red, green and blue parts of the visible spectrum. At the same time the stability of phosphorescent blue emitters is still a major challenge for OLED applications. In this review we highlight the basic principles and the main mechanisms behind phosphorescent light emission of various classes of photofunctional OLED materials, like organic polymers and oligomers, electron and hole transport molecules, elementoorganic complexes with heavy metal central ions, and clarify connections between the main features of electronic structure and the photo-physical properties of the phosphorescent OLED materials.

  1. Weak-microcavity organic light-emitting diodes with improved light out-coupling.

    PubMed

    Cho, Sang-Hwan; Song, Young-Woo; Lee, Joon-gu; Kim, Yoon-Chang; Lee, Jong Hyuk; Ha, Jaeheung; Oh, Jong-Suk; Lee, So Young; Lee, Sun Young; Hwang, Kyu Hwan; Zang, Dong-Sik; Lee, Yong-Hee

    2008-08-18

    We propose and demonstrate weak-microcavity organic light-emitting diode (OLED) displays with improved light-extraction and viewing-angle characteristics. A single pair of low- and high-index layers is inserted between indium tin oxide (ITO) and a glass substrate. The electroluminescent (EL) efficiencies of discrete red, green, and blue weak-microcavity OLEDs are enhanced by 56%, 107%, and 26%, respectively, with improved color purity. Moreover, full-color passive-matrix bottom-emitting OLED displays are fabricated by employing low-index layers of two thicknesses. As a display, the EL efficiency of white color was 27% higher than that of a conventional OLED display.

  2. GALEX 1st Light Far Ultraviolet

    NASA Image and Video Library

    2003-05-28

    This image was taken May 21 and 22, 2003 by NASA Galaxy Evolution Explorer. The image was made from data gathered by the far ultraviolet channel of the spacecraft camera during the mission first light milestone. It shows about 400 celestial objects

  3. Low Voltage, Low Power Organic Light Emitting Transistors for AMOLED Displays

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    McCarthy, M. A.; Liu, B.; Donoghue, E. P.

    2011-01-01

    Low voltage, low power dissipation, high aperture ratio organic light emitting transistors are demonstrated. The high level of performance is enabled by a carbon nanotube source electrode that permits integration of the drive transistor and the organic light emitting diode into an efficient single stacked device. Given the demonstrated performance, this technology could break the technical logjam holding back widespread deployment of active matrix organic light emitting displays at flat panel screen sizes.

  4. Light-Emitting Diodes: A Hidden Treasure

    ERIC Educational Resources Information Center

    Planinšic, Gorazd; Etkina, Eugenia

    2014-01-01

    LEDs, or light-emitting diodes, are cheap, easy to purchase, and thus commonly used in physics instruction as indicators of electric current or as sources of light (Fig. 1). In our opinion LEDs represent a unique piece of equipment that can be used to collect experimental evidence, and construct and test new ideas in almost every unit of a general…

  5. Organic light-emitting diodes with direct contact-printed red, green, blue, and white light-emitting layers

    NASA Astrophysics Data System (ADS)

    Chen, Sun-Zen; Peng, Shiang-Hau; Ting, Tzu-Yu; Wu, Po-Shien; Lin, Chun-Hao; Chang, Chin-Yeh; Shyue, Jing-Jong; Jou, Jwo-Huei

    2012-10-01

    We demonstrate the feasibility of using direct contact-printing in the fabrication of monochromatic and polychromatic organic light-emitting diodes (OLEDs). Bright devices with red, green, blue, and white contact-printed light-emitting layers with a respective maximum luminance of 29 000, 29 000, 4000, and 18 000 cd/m2 were obtained with sound film integrity by blending a polymeric host into a molecular host. For the red OLED as example, the maximum luminance was decreased from 29 000 to 5000 cd/m2 as only the polymeric host was used, or decreased to 7000 cd/m2 as only the molecular host was used. The markedly improved device performance achieved in the devices with blended hosts may be attributed to the employed polymeric host that contributed a good film-forming character, and the molecular host that contributed a good electroluminescence character.

  6. Light-Emitting Photon-Upconversion Nanoparticles in the Generation of Transdermal Reactive-Oxygen Species.

    PubMed

    Prieto, Martin; Rwei, Alina Y; Alejo, Teresa; Wei, Tuo; Lopez-Franco, Maria Teresa; Mendoza, Gracia; Sebastian, Victor; Kohane, Daniel S; Arruebo, Manuel

    2017-12-06

    Common photosensitizers used in photodynamic therapy do not penetrate the skin effectively. In addition, the visible blue and red lights used to excite such photosensitizers have shallow penetration depths through tissue. To overcome these limitations, we have synthesized ultraviolet- and visible-light-emitting, energy-transfer-based upconversion nanoparticles and coencapsulated them inside PLGA-PEG (methoxy poly(ethylene glycol)-b-poly(lactic-co-glycolic acid)) nanoparticles with the photosensitizer protoporphyrin IX. Nd 3+ has been introduced as a sensitizer in the upconversion nanostructure to allow its excitation at 808 nm. The subcytotoxic doses of the hybrid nanoparticles have been evaluated on different cell lines (i.e., fibroblasts, HaCaT, THP-1 monocytic cell line, U251MG (glioblastoma cell line), and mMSCs (murine mesenchymal stem cells). Upon NIR (near infrared)-light excitation, the upconversion nanoparticles emitted UV and VIS light, which consequently activated the generation of reactive-oxygen species (ROS). In addition, after irradiating at 808 nm, the resulting hybrid nanoparticles containing both upconversion nanoparticles and protoporphyrin IX generated 3.4 times more ROS than PLGA-PEG nanoparticles containing just the same dose of protoporphyrin IX. Their photodynamic effect was also assayed on different cell cultures, demonstrating their efficacy in selectively killing treated and irradiated cells. Compared to the topical application of the free photosensitizer, enhanced skin permeation and penetration were observed for the nanoparticulate formulation, using an ex vivo human-skin-permeation experiment. Whereas free protoporphyrin IX remained located at the outer layer of the skin, nanoparticle-encapsulated protoporphyrin IX was able to penetrate through the epidermal layer slightly into the dermis.

  7. [Progress of light extraction enhancement in organic light-emitting devices].

    PubMed

    Liu, Mo; Li, Tong; Wang, Yan; Zhang, Tian-Yu; Xie, Wen-Fa

    2011-04-01

    Organic light emitting devices (OLEDs) have been used in flat-panel displays and lighting with a near-30-year development. OLEDs possess many advantages, such as full solid device, fast response, flexible display, and so on. As the application of phosphorescence material, the internal quantum efficiency of OLED has almost reached 100%, but its external quantum efficiency is still not very high due to the low light extraction efficiency. In this review the authors summarizes recent advances in light extraction techniques that have been developed to enhance the light extraction efficiency of OLEDs.

  8. Transparent ultraviolet photovoltaic cells.

    PubMed

    Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

    2016-02-15

    Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

  9. Ag nanocluster-based color converters for white organic light-emitting devices

    NASA Astrophysics Data System (ADS)

    Nishikitani, Yoshinori; Takizawa, Daisuke; Uchida, Soichi; Lu, Yue; Nishimura, Suzushi; Oyaizu, Kenichi; Nishide, Hiroyuki

    2017-11-01

    The authors present Ag nanocluster-based color converters (Ag NC color converters), which convert part of the blue light from a light source to yellow light so as to create white organic light-emitting devices that could be suitable for lighting systems. Ag NCs synthesized by poly(methacrylic acid) template methods have a statistical size distribution with a mean diameter of around 4.5 nm, which is larger than the Fermi wavelength of around 2 nm. Hence, like free electrons in metals, the Ag NC electrons are thought to form a continuous energy band, leading to the formation of surface plasmons by photoexcitation. As for the fluorescence emission mechanism, the fact that the photoluminescence is excitation wavelength dependent suggests that the fluorescence originates from surface plasmons in Ag NCs of different sizes. By using Ag NC color converters and suitable blue light sources, white organic light-emitting devices can be fabricated based on the concept of light-mixing. For our blue light sources, we used polymer light-emitting electrochemical cells (PLECs), which, like organic light-emitting diodes, are area light sources. The PLECs were fabricated with a blue fluorescent π-conjugated polymer, poly[(9,9-dihexylfluoren-2,7-diyl)-co-(anthracen-9,10-diyl)] (PDHFA), and a polymeric solid electrolyte composed of poly(ethylene oxide) and KCF3SO3. In this device structure, the Ag NC color converter absorbs blue light from the PDHFA-based PLEC (PDHFA-PLEC) and then emits yellow light. When the PDHFA-PLEC is turned on by applying an external voltage, pure white light emission can be produced with Commission Internationale de l'Eclairage coordinates of (x = 0.32, y = 0.33) and a color rendering index of 93.6. This study shows that utilization of Ag NC color converters and blue PLECs is a very promising and highly effective method for realizing white organic light-emitting devices.

  10. The difficulty of ultraviolet emssion from supernovae

    NASA Technical Reports Server (NTRS)

    Colgate, S. A.

    1971-01-01

    There are certain conceptual difficulties in the theory of the generation of ultraviolet radiation which is presumed for the creation of the optical fluorescence mechanism of supernova light emission and ionization of a nebula as large as the Gum nebula. Requirements concerning the energy distribution of the ultraviolet photons are: 1) The energy of the greater part of the photons must be sufficient to cause both helium fluorescence and hydrogen ionization. 2) If the photons are emitted in an approximate black body spectrum, the fraction of energy emitted in the optical must be no more than what is already observed. Ultraviolet black body emission depends primarily on the energy source. The probability that the wide mixture of elements present in the interstellar medium and supernova ejecta results in an emission localized in a limited region with less than 0.001 emission in the visible, for either ionization or fluorescence ultraviolet, is remote. Therefore transparent emission must be excluded as unlikely, and black body or at least quasi-black-body emission is more probable.

  11. Light Emitting Diode (LED)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique called photodynamic therapy, requires the surgeon to use tiny pinhead-size Light Emitting Diodes (LEDs) (a source releasing long wavelengths of light) to activate light-sensitive, tumor-treating drugs. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can also be used for hours at a time while still remaining cool to the touch. The LED probe consists of 144 tiny pinhead-size diodes, is 9-inches long, and about one-half-inch in diameter. The small balloon aids in even distribution of the light source. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The probe was developed for photodynamic cancer therapy by the Marshall Space Flight Center under a NASA Small Business Innovative Research program grant.

  12. Salt-Doped Polymer Light-Emitting Devices

    NASA Astrophysics Data System (ADS)

    Gautier, Bathilde

    Polymer Light-Emitting Electrochemical Cells (PLECs) are solid state devices based on the in situ electrochemical doping of the luminescent polymer and the formation of a p-n junction where light is emitted upon the application of a bias current or voltage. PLECs answer the drawbacks of polymer light-emitting diodes as they do not require an ultra-thin active layer nor are they reliant on low work function cathode materials that are air unstable. However, because of the dynamic nature of the doping, they suffer from slow response times and poor stability over time. Frozen-junction PLECs offer a solution to these drawbacks, yet they are impractical due to their sub-ambient operation temperature requirement. Our work presented henceforth aims to achieve room temperature frozen-junction PLECS. In order to do that we removed the ion solvating/transporting polymer from the active layer, resulting in a luminescent polymer combined solely with a salt sandwiched between an ITO electrode and an aluminum electrode. The resulting device was not expected to operate like a PLEC due to the absence of an ion-solvating and ion-transporting medium. However, we discovered that the polymer/salt devices could be activated by applying a large voltage bias, resulting in much higher current and luminance. More important, the activated state is quasi static. Devices based on the well-known orange-emitting polymer MEH-PPV displayed a luminance storage half-life of 150 hours when activated by forward bias (ITO biased positively with respect to the aluminum) and 200 hours when activated by reverse bias. More remarkable yet, devices based on a green co-polymer displayed no notable decay in current density or luminance even after being stored for 1200 hours at room temperature! PL imaging under UV excitation demonstrates the presence of doping. These devices are described herein along with an explanation of their operating mechanisms.

  13. Point-of-use water disinfection using ultraviolet and visible light-emitting diodes.

    PubMed

    Lui, Gough Yumu; Roser, David; Corkish, Richard; Ashbolt, Nicholas J; Stuetz, Richard

    2016-05-15

    Improvements in point-of-use (POU) drinking water disinfection technologies for remote and regional communities are urgently needed. Conceptually, UV-C light-emitting diodes (LEDs) overcome many drawbacks of low-pressure mercury tube based UV devices, and UV-A or visible light LEDs also show potential. To realistically evaluate the promise of LED disinfection, our study assessed the performance of a model 1.3 L reactor, similar in size to solar disinfection bottles. In all, 12 different commercial or semi-commercial LED arrays (270-740 nm) were compared for their ability to inactivate Escherichia coli K12 ATCC W3110 and Enterococcus faecalis ATCC 19433 over 6h. Five log10 and greater reductions were consistently achieved using the 270, 365, 385 and 405 nm arrays. The output of the 310 nm array was insufficient for useful disinfection while 430 and 455 nm performance was marginal (≈ 4.2 and 2.3-log10s E. coli and E. faecalis over the 6h). No significant disinfection was observed with the 525, 590, 623, 660 and 740 nm arrays. Delays in log-phase inactivation of E. coli were observed, particularly with UV-A wavelengths. The radiation doses required for >3-log10 reduction of E. coli and E. faecalis differed by 10 fold at 270 nm but only 1.5-2.5 fold at 365-455 nm. Action spectra, consistent with the literature, were observed with both indicators. The design process revealed cost and technical constraints pertaining to LED electrical efficiency, availability and lifetime. We concluded that POU LED disinfection using existing LED technology is already technically possible. UV-C LEDs offer speed and energy demand advantages, while UV-A/violet units are safer. Both approaches still require further costing and engineering development. Our study provides data needed for such work. Copyright © 2016 Elsevier B.V. All rights reserved.

  14. Broadband visible light source based on AllnGaN light emitting diodes

    DOEpatents

    Crawford, Mary H.; Nelson, Jeffrey S.

    2003-12-16

    A visible light source device is described based on a light emitting diode and a nanocluster-based film. The light emitting diode utilizes a semiconductor quantum well structure between n-type and p-type semiconductor materials on the top surface a substrate such as sapphire. The nanocluster-based film is deposited on the bottom surface of the substrate and can be derived from a solution of MoS.sub.2, MoSe.sub.2, WS.sub.2, and WSe.sub.2 particles of size greater than approximately 2 nm in diameter and less than approximately 15 nm in diameter, having an absorption wavelength greater than approximately 300 nm and less than approximately 650 nm.

  15. Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Deng, Lingling; Zhou, Hongwei; Chen, Shufen; Shi, Hongying; Liu, Bin; Wang, Lianhui; Huang, Wei

    2015-02-01

    Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the use of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.

  16. Multicolor white light-emitting diodes for illumination applications

    NASA Astrophysics Data System (ADS)

    Chi, Solomon W. S.; Chen, Tzer-Perng; Tu, Chuan-Cheng; Chang, Chih-Sung; Tsai, Tzong-Liang; Hsieh, Mario C. C.

    2004-01-01

    Semiconductor light emitting diode (LED) has become a promising device for general-purpose illumination applications. LED has the features of excellent durability, long operation life, low power consumption, no mercury containing and potentially high efficiency. Several white LED technologies appear capable of meeting the technical requirements of illumination. In this paper we present a new multi-color white (MCW) LED as a high luminous efficacy, high color rendering index and low cost white illuminator. The device consists of two LED chips, one is AlInGaN LED for emitting shorter visible spectra, another is AlInGaP LED for emitting longer visible spectra. At least one chip in the MCW-LED has two or more transition energy levels used for emitting two or more colored lights. The multiple colored lights generated from the MCW-LED can be mixed into a full-spectral white light. Besides, there is no phosphors conversion layer used in the MCW-LED structure. Therefore, its color rendering property and illumination efficiency are excellent. The Correlated Color Temperature (CCT) of the MCW-LED may range from 2,500 K to over 10,000 K. The theoretical General Color Rendering Index (Ra) could be as high as 94, which is close to the incandescent and halogen sources, while the Ra of binary complementary white (BCW) LED is about 30 ~ 45. Moreover, compared to the expensive ternary RGB (Red AlInGaP + Green AlInGaN + Blue AlInGaN) white LED sources, the MCW-LED uses only one AlInGaN chip in combination with one cheap AlInGaP chip, to form a low cost, high luminous performance white light source. The MCW-LED is an ideal light source for general-purpose illumination applications.

  17. Flip-chip light emitting diode with resonant optical microcavity

    DOEpatents

    Gee, James M.; Bogart, Katherine H.A.; Fischer, Arthur J.

    2005-11-29

    A flip-chip light emitting diode with enhanced efficiency. The device structure employs a microcavity structure in a flip-chip configuration. The microcavity enhances the light emission in vertical modes, which are readily extracted from the device. Most of the rest of the light is emitted into waveguided lateral modes. Flip-chip configuration is advantageous for light emitting diodes (LEDs) grown on dielectric substrates (e.g., gallium nitride LEDs grown on sapphire substrates) in general due to better thermal dissipation and lower series resistance. Flip-chip configuration is advantageous for microcavity LEDs in particular because (a) one of the reflectors is a high-reflectivity metal ohmic contact that is already part of the flip-chip configuration, and (b) current conduction is only required through a single distributed Bragg reflector. Some of the waveguided lateral modes can also be extracted with angled sidewalls used for the interdigitated contacts in the flip-chip configuration.

  18. Si light-emitting device in integrated photonic CMOS ICs

    NASA Astrophysics Data System (ADS)

    Xu, Kaikai; Snyman, Lukas W.; Aharoni, Herzl

    2017-07-01

    The motivation for integrated Si optoelectronics is the creation of low-cost photonics for mass-market applications. Especially, the growing demand for sensitive biochemical sensors in the environmental control or medicine leads to the development of integrated high resolution sensors. Here CMOS-compatible Si light-emitting device structures are presented for investigating the effect of various depletion layer profiles and defect engineering on the photonic transition in the 1.4-2.8 eV. A novel Si device is proposed to realize both a two-terminal Si-diode light-emitting device and a three-terminal Si gate-controlled diode light-emitting device in the same device structure. In addition to the spectral analysis, differences between two-terminal and three-terminal devices are discussed, showing the light emission efficiency change. The proposed Si optical source may find potential applications in micro-photonic systems and micro-optoelectro-mechanical systems (MOEMS) in CMOS integrated circuitry.

  19. Organic light-emitting diode materials

    DOEpatents

    Aspuru-Guzik, Alan; Gomez-Bombarelli, Rafael; Aguilera-Iparraguirre, Jorge; Baldo, Marc; Van Voorhis, Troy; Hirzel, Timothy D.; Bahlke, Matthias; McMahon, David; Wu, Tony Chang-Chi

    2018-05-15

    Described herein are molecules for use in organic light emitting diodes. Example molecules comprise at least one moiety A and at least one moiety D. Values and preferred values of the moieties A and D are described herein. The molecules comprise at least one atom selected from Si, Se, Ge, Sn, P, or As.

  20. Three-peak standard white organic light-emitting devices for solid-state lighting

    NASA Astrophysics Data System (ADS)

    Guo, Kunping; Wei, Bin

    2014-12-01

    Standard white organic light-emitting device (OLED) lighting provides a warm and comfortable atmosphere and shows mild effect on melatonin suppression. A high-efficiency red OLED employing phosphorescent dopant has been investigated. The device generates saturated red emission with Commission Internationale de l'Eclairage (CIE) coordinates of (0.66, 0.34), characterized by a low driving voltage of 3.5 V and high external quantum efficiency of 20.1% at 130 cd m-2. In addition, we have demonstrated a two-peak cold white OLED by combining with a pure blue emitter with the electroluminescent emission of 464 nm, 6, 12-bis{[N-(3,4-dimethylpheyl)-N-(2,4,5-trimethylphenyl)]} chrysene (BmPAC). It was found that the man-made lighting device capable of yielding a relatively stable color emission within the luminance range of 1000-5000 cd m-2. And the chromaticity coordinates, varying from (0.25, 0.21) to (0.23, 0.21). Furthermore, an ultrathin layer of green-light-emitting tris (2-phenylpyridinato)iridium(Ⅲ) Ir(ppy)3 in the host material was introduced to the emissive region for compensating light. By appropriately controlling the layer thickness, the white light OLED achieved good performance of 1280 cd m-2 at 5.0 V and 5150 cd m-2 at 7.0 V, respectively. The CIE coordinates of the emitted light are quite stable at current densities from 759 cd m-2 to 5150 cd m-2, ranging from (0.34, 0.37) to (0.33, 0.33).

  1. Tunable hole injection of solution-processed polymeric carbon nitride towards efficient organic light-emitting diode

    NASA Astrophysics Data System (ADS)

    Zhang, Xiaowen; Zheng, Qinghong; Tang, Zhenyu; Li, Wanshu; Zhang, Yan; Xu, Kai; Xue, Xiaogang; Xu, Jiwen; Wang, Hua; Wei, Bin

    2018-02-01

    Polymeric carbon nitride (CNxHy) has been facilely synthesized from dicyandiamide and functions as a solution-processed hole injection layer in organic light-emitting diodes (OLEDs). The measurements using X-ray diffraction, atomic force microscopy, X-ray photoelectron spectroscopy, ultraviolet photoelectron spectroscopy, and impedance spectroscopy elucidate that CNxHy exhibits superior film morphology and extra electric properties such as tailored work function and tunable hole injection. The luminous efficiency of CNxHy-based OLED is found to improve by 76.6% in comparison to the counterpart using favorite solution-processed poly(ethylene dioxythiophene):poly(styrene sulfonate) as the hole injection layer. Our results also pave a way for broadening carbon nitride applications in organic electronics using the solution process.

  2. Ultraviolet photometry from the Orbiting Astronomical Observatory. XXVIII - Ultraviolet light curves for Alpha Lupi and BW Vulpeculae

    NASA Technical Reports Server (NTRS)

    Lesh, J. R.

    1978-01-01

    Photometric data from the Wisconsin Experiment Package on OAO-2 have been used to construct light curves at three ultraviolet wavelengths for Alpha Lup and at seven wavelengths for BW Vul. Both stars are well-known variables of the Beta Cephei (Beta Canis Majoris) type. The light curves for Alpha Lup are in good agreement with the radial-velocity period. A temperature variation of 400-500 K is derived. The BW Vul light curves confirm recent ephemerides based on a secularly varying period and show a stillstand near light maximum at some wavelengths. Both stars exhibit increasing light amplitude at the shortest ultraviolet wavelengths. There is little evidence for cycle-to-cycle variations on a time scale of the order of 1 day.

  3. Vacuum Nanohole Array Embedded Phosphorescent Organic Light Emitting Diodes

    PubMed Central

    Jeon, Sohee; Lee, Jeong-Hwan; Jeong, Jun-Ho; Song, Young Seok; Moon, Chang-Ki; Kim, Jang-Joo; Youn, Jae Ryoun

    2015-01-01

    Light extraction from organic light-emitting diodes that utilize phosphorescent materials has an internal efficiency of 100% but is limited by an external quantum efficiency (EQE) of 30%. In this study, extremely high-efficiency organic light emitting diodes (OLEDs) with an EQE of greater than 50% and low roll-off were produced by inserting a vacuum nanohole array (VNHA) into phosphorescent OLEDs (PhOLEDs). The resultant extraction enhancement was quantified in terms of EQE by comparing experimentally measured results with those produced from optical modeling analysis, which assumes the near-perfect electric characteristics of the device. A comparison of the experimental data and optical modeling results indicated that the VNHA extracts the entire waveguide loss into the air. The EQE obtained in this study is the highest value obtained to date for bottom-emitting OLEDs. PMID:25732061

  4. Light shield and cooling apparatus. [high intensity ultraviolet lamp

    NASA Technical Reports Server (NTRS)

    Meador, T. G., Jr. (Inventor)

    1974-01-01

    A light shield and cooling apparatus was developed for a high intensity ultraviolet lamp including water and high pressure air for cooling and additional apparatus for shielding the light and suppressing the high pressure air noise.

  5. Europium containing red light-emitting fibers made by electrohydrodynamic casting

    NASA Astrophysics Data System (ADS)

    Gan, Yong X.; Panahi, Niousha; Yu, Christina; Gan, Jeremy B.; Cheng, Wanli

    2018-05-01

    Red light-emitting polymeric micro- and nanofibers were made by electrohydrodynamic co-casting of two fluids. One fluid contains a 10 wt% concentration europium (III) complex dissolved in a dimethylformamide (DMF) solvent. The europium complex, an Eu3+ compound with the nominal formula of Eu(BA)3phen/PAN, consists of polyacrylonitrile (PAN), 1,10-phenanthroline (phen), and benzoic acid (BA). The other fluid consists of iron metal oxide nanoparticles dispersed in a solution containing 10 wt% polyacrylonitrile polymer in DMF solvent. The two fluids were electrohydrodynamically co-cast onto a soft tissue paper using a stainless steel coaxial nozzle. The intensity of the electric field used for the co-casting was 1.5 kV/cm. Scanning electron microscopic observation on the fibers obtained from the co-casting was made. The size of the fibers ranges from several hundreds of nanometers to several microns. Energy dispersive X-ray spectroscopic analysis of the fibers confirmed that the major elements included C, O, Fe, and Eu. The fluorescence of the two types of fibers was tested under the excitation of a UV light source. It was found that when the europium complex-containing solution was the sheath fluid and the iron-containing solution was the core, the prepared fibers showed red light-emitting behavior under ultraviolet light. Time-dependent fluorescence shows the two-stage decaying behavior. The first stage lasts about 2000 s and the intensity of fluorescence decreases linearly. The second stage reveals the slow decaying behavior and it lasts longer than 3 h. Based on the bi-exponential data fitting using a processing MATLAB code, the fluorescence-related constants were extracted. A bi-exponential formula was proposed to describe the time-dependent fluorescence behavior of the fiber made by the europium complex-containing solution as the sheath fluid. The decaying in the fluorescence shows two different stages. The first stage lasts about 2000 s and it is characterized

  6. Influences of wide-angle and multi-beam interference on the chromaticity and efficiency of top-emitting white organic light-emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Deng, Lingling; Zhou, Hongwei; Chen, Shufen, E-mail: iamsfchen@njupt.edu.cn

    Wide-angle interference (WI) and multi-beam interference (MI) in microcavity are analyzed separately to improve chromaticity and efficiency of the top-emitting white organic light-emitting diodes (TWOLEDs). A classic electromagnetic theory is used to calculate the resonance intensities of WI and MI in top-emitting organic light-emitting diodes (TOLEDs) with influence factors (e.g., electrodes and exciton locations) being considered. The role of WI on the performances of TOLEDs is revealed through using δ-doping technology and comparing blue and red EML positions in top-emitting and bottom-emitting devices. The blue light intensity significantly increases and the chromaticity of TWOLEDs is further improved with the usemore » of enhanced WI (the blue emitting layer moving towards the reflective electrode) in the case of a weak MI. In addition, the effect of the thicknesses of light output layer and carrier transport layers on WI and MI are also investigated. Apart from the microcavity effect, other factors, e.g., carrier balance and carrier recombination regions are considered to obtain TWOLEDs with high efficiency and improved chromaticity near white light equal-energy point.« less

  7. Disinfection of Spacecraft Potable Water Systems by Photocatalytic Oxidation Using UV-A Light Emitting Diodes

    NASA Technical Reports Server (NTRS)

    Birmele, Michele N.; O'Neal, Jeremy A.; Roberts, Michael S.

    2011-01-01

    Ultraviolet (UV) light has long been used in terrestrial water treatment systems for photodisinfection and the removal of organic compounds by several processes including photoadsorption, photolysis, and photocatalytic oxidation/reduction. Despite its effectiveness for water treatment, UV has not been explored for spacecraft applications because of concerns about the safety and reliability of mercury-containing UV lamps. However, recent advances in ultraviolet light emitting diodes (UV LEDs) have enabled the utilization of nanomaterials that possess the appropriate optical properties for the manufacture of LEDs capable of producing monochromatic light at germicidal wavelengths. This report describes the testing of a commercial-off-the-shelf, high power Nichia UV-A LED (250mW A365nnJ for the excitation of titanium dioxide as a point-of-use (POD) disinfection device in a potable water system. The combination of an immobilized, high surface area photocatalyst with a UV-A LED is promising for potable water system disinfection since toxic chemicals and resupply requirements are reduced. No additional consumables like chemical biocides, absorption columns, or filters are required to disinfect and/or remove potentially toxic disinfectants from the potable water prior to use. Experiments were conducted in a static test stand consisting of a polypropylene microtiter plate containing 3mm glass balls coated with titanium dioxide. Wells filled with water were exposed to ultraviolet light from an actively-cooled UV-A LED positioned above each well and inoculated with six individual challenge microorganisms recovered from the International Space Station (ISS): Burkholderia cepacia, Cupriavidus metallidurans, Methylobacterium fujisawaense, Pseudomonas aeruginosa, Sphingomonas paucimobilis and Wautersia basilensis. Exposure to the Nichia UV-A LED with photocatalytic oxidation resulted in a complete (>7-log) reduction of each challenge bacteria population in <180 minutes of contact

  8. Lead iodide perovskite light-emitting field-effect transistor

    PubMed Central

    Chin, Xin Yu; Cortecchia, Daniele; Yin, Jun; Bruno, Annalisa; Soci, Cesare

    2015-01-01

    Despite the widespread use of solution-processable hybrid organic–inorganic perovskites in photovoltaic and light-emitting applications, determination of their intrinsic charge transport parameters has been elusive due to the variability of film preparation and history-dependent device performance. Here we show that screening effects associated to ionic transport can be effectively eliminated by lowering the operating temperature of methylammonium lead iodide perovskite (CH3NH3PbI3) field-effect transistors. Field-effect carrier mobility is found to increase by almost two orders of magnitude below 200 K, consistent with phonon scattering-limited transport. Under balanced ambipolar carrier injection, gate-dependent electroluminescence is also observed from the transistor channel, with spectra revealing the tetragonal to orthorhombic phase transition. This demonstration of CH3NH3PbI3 light-emitting field-effect transistors provides intrinsic transport parameters to guide materials and solar cell optimization, and will drive the development of new electro-optic device concepts, such as gated light-emitting diodes and lasers operating at room temperature. PMID:26108967

  9. Ambipolar light-emitting organic single-crystal transistors with a grating resonator

    PubMed Central

    Maruyama, Kenichi; Sawabe, Kosuke; Sakanoue, Tomo; Li, Jinpeng; Takahashi, Wataru; Hotta, Shu; Iwasa, Yoshihiro; Takenobu, Taishi

    2015-01-01

    Electrically driven organic lasers are among the best lasing devices due to their rich variety of emission colors as well as other advantages, including printability, flexibility, and stretchability. However, electrically driven lasing in organic materials has not yet been demonstrated because of serious luminescent efficiency roll-off under high current density. Recently, we found that the organic ambipolar single-crystal transistor is an excellent candidate for lasing devices because it exhibits less efficient roll-off, high current density, and high luminescent efficiency. Although a single-mode resonator combined with light-emitting transistors (LETs) is necessary for electrically driven lasing devices, the fragility of organic crystals has strictly limited the fabrication of resonators, and LETs with optical cavities have never been fabricated until now. To achieve this goal, we improved the soft ultraviolet-nanoimprint lithography method and demonstrated electroluminescence from a single-crystal LET with a grating resonator, which is a crucial milestone for future organic lasers. PMID:25959455

  10. Ultraviolet light absorbers having two different chromophors in the same molecule

    DOEpatents

    Vogl, O.; Li, S.

    1983-10-06

    This invention relates to novel ultraviolet light absorbers having two chromophors in the same molecule, and more particularly to benzotriazole substituted dihydroxybenzophenones and acetophenones. More particularly, this invention relates to 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxybenzophenone and 3,5-(di(2H-benzotriazole-2-yl))-2,4-dihydroxyacetophenone which are particularly useful as an ultraviolet light absorbers.

  11. Organic light-emitting device with a phosphor-sensitized fluorescent emission layer

    DOEpatents

    Forrest, Stephen [Ann Arbor, MI; Kanno, Hiroshi [Osaka, JP

    2009-08-25

    The present invention relates to organic light emitting devices (OLEDs), and more specifically to OLEDS that emit light using a combination of fluorescent emitters and phosphorescent emitters. The emissive region of the devices of the present invention comprise at least one phosphor-sensitized layer which has a combined emission from a phosphorescent emitter and a fluorescent emitter. In preferred embodiments, the invention relates to white-emitting OLEDS (WOLEDs).

  12. All-solution processed transparent organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Min; Höfle, Stefan; Czolk, Jens; Mertens, Adrian; Colsmann, Alexander

    2015-11-01

    In this work, we report on indium tin oxide-free, all-solution processed transparent organic light emitting diodes (OLEDs) with inverted device architecture. Conductive polymer layers are employed as both transparent cathodes and transparent anodes, with the top anodes having enhanced conductivities from a supporting stochastic silver nanowire mesh. Both electrodes exhibit transmittances of 80-90% in the visible spectral regime. Upon the incorporation of either yellow- or blue-light emitting fluorescent polymers, the OLEDs show low onset voltages, demonstrating excellent charge carrier injection from the polymer electrodes into the emission layers. Overall luminances and current efficiencies equal the performance of opaque reference OLEDs with indium tin oxide and aluminium electrodes, proving excellent charge carrier-to-light conversion within the device.

  13. Method and apparatus for improving the performance of light emitting diodes

    DOEpatents

    Lowery, Christopher H.; McElfresh, David K.; Burchet, Steve; Adolf, Douglas B.; Martin, James

    1996-01-01

    A method for increasing the resistance of a light emitting diode and other semiconductor devices to extremes of temperature is disclosed. During the manufacture of the light emitting diode, a liquid coating is applied to the light emitting die after the die has been placed in its lead frame. After the liquid coating has been placed on the die and its lead frames, a thermosetting encapsulant material is placed over the coating. The operation that cures the thermosetting material leaves the coating liquid intact. As the die and the encapsulant expand and contract at different rates with respect to changes in temperature, and as in known light emitting diodes the encapsulating material adheres to the die and lead frames, this liquid coating reduces the stresses that these different rates of expansion and contraction normally cause by eliminating the adherence of the encapsulating material to the die and frame.

  14. Sun Emits a Mid-Level Flare on Dec. 4, 2014

    NASA Image and Video Library

    2017-12-08

    The sun emitted a solar flare on Dec. 4, 2014, seen as the flash of light in this image from NASA's Solar Dynamics Observatory. The image blends two wavelengths of extreme ultraviolet light – 131 and 171 Angstroms – which are typically colored in teal and gold, respectively. Read more: 1.usa.gov/121n7PP Image Credit: NASA/SDO

  15. Finding the average speed of a light-emitting toy car with a smartphone light sensor

    NASA Astrophysics Data System (ADS)

    Kapucu, Serkan

    2017-07-01

    This study aims to demonstrate how the average speed of a light-emitting toy car may be determined using a smartphone’s light sensor. The freely available Android smartphone application, ‘AndroSensor’, was used for the experiment. The classroom experiment combines complementary physics knowledge of optics and kinematics to find the average speed of a moving object. The speed of the toy car is found by determining the distance between the light-emitting toy car and the smartphone, and the time taken to travel these distances. To ensure that the average speed of the toy car calculated with the help of the AndroSensor was correct, the average speed was also calculated by analyzing video-recordings of the toy car. The resulting speeds found with these different methods were in good agreement with each other. Hence, it can be concluded that reliable measurements of the average speed of light-emitting objects can be determined with the help of the light sensor of an Android smartphone.

  16. Spin-polarized light-emitting diodes based on organic bipolar spin valves

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Vardeny, Zeev Valentine; Nguyen, Tho Duc; Ehrenfreund, Eitan Avraham

    Spin-polarized organic light-emitting diodes are provided. Such spin-polarized organic light-emitting diodes incorporate ferromagnetic electrodes and show considerable spin-valve magneto-electroluminescence and magneto-conductivity responses, with voltage and temperature dependencies that originate from the bipolar spin-polarized space charge limited current.

  17. UV light-emitting-diode photochemical mercury vapor generation for atomic fluorescence spectrometry.

    PubMed

    Hou, Xiaoling; Ai, Xi; Jiang, Xiaoming; Deng, Pengchi; Zheng, Chengbin; Lv, Yi

    2012-02-07

    A new, miniaturized and low power consumption photochemical vapor generation (PVG) technique utilizing an ultraviolet light-emitting diode (UV-LED) lamp is described, and further validated via the determination of trace mercury. In the presence of formic acid, the mercury cold vapor is favourably generated from Hg(2+) solutions by UV-LED irradiation, and then rapidly transported to an atomic fluorescence spectrometer for detection. Optimum conditions for PVG and interferences from concomitant elements were investigated in detail. Under optimum conditions, a limit of detection (LOD) of 0.01 μg L(-1) was obtained, and the precision was better than 3.2% (n = 11, RSD) at 1 μg L(-1) Hg(2+). No obvious interferences from any common ions were evident. The methodology was successfully applied to the determination of mercury in National Research Council Canada DORM-3 fish muscle tissue and several water samples.

  18. Luminescence properties of Eu 3+ and Sm 3+ coactivated Gd(III) tungstate phosphor for light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Wei, Qiong; Chen, Donghua

    2009-09-01

    Rare-earth ions coactivated red phosphors Gd 0.2RE 1.8(WO 4) 3 (RE=Eu 3+ and Sm 3+) were synthesized by conventional solid-state reaction using boric acid as a flux agent. The samples were characterized by X-ray diffractometer (XRD), energy-dispersive X-ray spectrometer (EDS) and luminescence spectrometer (LS). The results showed that the Eu-Sm system exhibits higher emission intensity than those of the Eu single-doped system and Sm separate-doped system under ultraviolet (UV) radiation. Samarium(III) ions are effective in broadening and strengthened absorptions around 400 nm. Furthermore, it exhibits enhanced luminescence emission. when the mole ratio of boric acid is about 0.16, the luminescence capability is optimum. Two strongest lines at ultraviolet (394 nm) and blue (465 nm) in excitation spectra of these phosphors match well with the output wavelengths of UV and blue GaN-based light-emitting diodes (LEDs) chips.

  19. Characteristics of blue organic light emitting diodes with different thick emitting layers

    NASA Astrophysics Data System (ADS)

    Li, Chong; Tsuboi, Taiju; Huang, Wei

    2014-08-01

    We fabricated blue organic light emitting diodes (called blue OLEDs) with emitting layer (EML) of diphenylanthracene derivative 9,10-di(2-naphthyl)anthracene (ADN) doped with blue-emitting DSA-ph (1-4-di-[4-(N,N-di-phenyl)amino]styryl-benzene) to investigate how the thickness of EML and hole injection layer (HIL) influences the electroluminescence characteristics. The driving voltage was observed to increase with increasing EML thickness from 15 nm to 70 nm. The maximum external quantum efficiency of 6.2% and the maximum current efficiency of 14 cd/A were obtained from the OLED with 35 nm thick EML and 75 nm thick HIL. High luminance of 120,000 cd/m2 was obtained at 7.5 V from OLED with 15 nm thick EML.

  20. Protection from visible light by commonly used textiles is not predicted by ultraviolet protection.

    PubMed

    Van den Keybus, Caroline; Laperre, Jan; Roelandts, Rik

    2006-01-01

    Interest is increasing in the prevention of acute and chronic actinic damage provided by clothing. This interest has focused mainly on protection against ultraviolet irradiation, but it has now also turned to protection against visible light. This change is mainly due to the action spectrum in the visible light range of some photodermatoses and the increasing interest in photodynamic therapy. The ultraviolet protection provided by commercially available textiles can be graded by determining an ultraviolet protection factor. Several methods have already been used to determine the ultraviolet protection factor. The fact that protection from visible light by textiles cannot be predicted by their ultraviolet protection makes the situation more complicated. This study attempts to determine whether or not the ultraviolet protection factor value of a particular textile is a good parameter for gauging its protection in the visible light range and concludes that a protection factor of textile materials against visible light needs to be developed. This development should go beyond the protection factor definition used in this article, which has some limitations, and should take into account the exact action spectrum for which the protection is needed.

  1. Light Emitting Diodes (LEDs)

    NASA Technical Reports Server (NTRS)

    1997-01-01

    A special lighting technology was developed for space-based commercial plant growth research on NASA's Space Shuttle. Surgeons have used this technology to treat brain cancer on Earth, in two successful operations. The treatment technique, called Photodynamic Therapy, requires the surgeon to use tiny, pinhead-size Light Emitting Diodes (LEDs) (a source that releases long wavelengths of light ) to activate light-sensitive, tumor-treating drugs. 'A young woman operated on in May 1999 has fully recovered with no complications and no evidence of the tumor coming back,' said Dr. Harry Whelan, a pediatric neurologist at the Medical Hospital of Wisconsin in Milwaukee. Laser light has been used for this type of surgery in the past, but the LED light illuminates through all nearby tissues, reaching parts of a tumor that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. It can be used for hours at a time while still remaining cool to the touch. The LED light source is compact, about the size of a briefcase, and can be purchased for a fraction of the cost of a laser. The LEDs, developed and managed by NASA's Marshall Space Flight Center, have been used on seven Space Shuttle flights inside the Microgravity Astroculture Facility. This technology has also been successfully used to further commercial research in crop growth.

  2. Progress in wet-coated organic light-emitting devices for lighting

    NASA Astrophysics Data System (ADS)

    Liu, Jie; Ye, Qing; Lewis, Larry N.; Duggal, Anil R.

    2007-09-01

    Here we present recent progress in developing efficient wet-coated organic light-emitting devices (OLEDs) for lighting applications. In particular, we describe a novel approach for building efficient wet-coated dye-doped blue phosphorescent devices. Further, a novel approach for achieving arbitrary emission patterning for OLEDs is discussed. This approach utilizes a photo-induced chemical doping strategy for selectively activating charge injection materials, thus enabling devices with arbitrary emission patterning. This approach may provide a simple, low cost path towards specialty lighting and signage applications for OLED technology.

  3. High efficiency III-nitride light-emitting diodes

    DOEpatents

    Crawford, Mary; Koleske, Daniel; Cho, Jaehee; Zhu, Di; Noemaun, Ahmed; Schubert, Martin F; Schubert, E. Fred

    2013-05-28

    Tailored doping of barrier layers enables balancing of the radiative recombination among the multiple-quantum-wells in III-Nitride light-emitting diodes. This tailored doping enables more symmetric carrier transport and uniform carrier distribution which help to reduce electron leakage and thus reduce the efficiency droop in high-power III-Nitride LEDs. Mitigation of the efficiency droop in III-Nitride LEDs may enable the pervasive market penetration of solid-state-lighting technologies in high-power lighting and illumination.

  4. Top-emitting white organic light-emitting devices with down-conversion phosphors: theory and experiment.

    PubMed

    Ji, Wenyu; Zhang, Letian; Gao, Ruixue; Zhang, Liming; Xie, Wenfa; Zhang, Hanzhuang; Li, Bin

    2008-09-29

    White top-emitting organic light-emitting devices (TEOLEDs) with down-conversion phosphors are investigated from theory and experiment. The theoretical simulation was described by combining the microcavity model with the down-conversion model. A White TEOLED by the combination of a blue TEOLED with organic down-conversion phosphor 3-(4-(diphenylamino)phenyl)-1-pheny1prop-2-en-1-one was fabricated to validate the simulated results. It is shown that this approach permits the generation of white light in TEOLEDs. The efficiency of the white TEOLED is twice over the corresponding blue TEOLED. The feasible methods to improve the performance of such white TEOLEDs are discussed.

  5. ULTRAVIOLET LIGHT DISINFECTION OF COMBINED SEWER OVERFLOW (NEW ORLEANS)

    EPA Science Inventory

    The objective of this state-of-the-art review is to examine the performance and effectiveness of ultraviolet (UV) light disinfection for combined sewer overflow (CSO) applications. Topics presented include the use of UV light as a disinfecting agent, its practical applications, d...

  6. Light-extraction enhancement of GaN-based 395  nm flip-chip light-emitting diodes by an Al-doped ITO transparent conductive electrode.

    PubMed

    Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing

    2018-06-01

    The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1  Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.

  7. Light emitting ceramic device and method for fabricating the same

    DOEpatents

    Valentine, Paul; Edwards, Doreen D.; Walker Jr., William John; Slack, Lyle H.; Brown, Wayne Douglas; Osborne, Cathy; Norton, Michael; Begley, Richard

    2004-11-30

    A light-emitting ceramic based panel, hereafter termed "electroceramescent" panel, and alternative methods of fabrication for the same are claimed. The electroceramescent panel is formed on a substrate providing mechanical support as well as serving as the base electrode for the device. One or more semiconductive ceramic layers directly overlay the substrate, and electrical conductivity and ionic diffusion are controlled. Light emitting regions overlay the semiconductive ceramic layers, and said regions consist sequentially of a layer of a ceramic insulation layer and an electroluminescent layer, comprised of doped phosphors or the equivalent. One or more conductive top electrode layers having optically transmissive areas overlay the light emitting regions, and a multi-layered top barrier cover comprising one or more optically transmissive non-combustible insulation layers overlay said top electrode regions.

  8. Variation of the external quantum efficiency with temperature and current density in red, blue, and deep ultraviolet light-emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Park, Jun Hyuk; Lee, Jong Won; Kim, Dong Yeong

    The temperature-dependent external quantum efficiencies (EQEs) were investigated for a 620 nm AlGaInP red light-emitting diodes (LEDs), a 450 nm GaInN blue LED, and a 285 nm AlGaN deep-ultraviolet (DUV) LED. We observed distinct differences in the variation of the EQE with temperature and current density for the three types of LEDs. Whereas the EQE of the AlGaInP red LED increases as temperature decreases below room temperature, the EQEs of GaInN blue and AlGaN DUV LEDs decrease for the same change in temperature in a low-current density regime. The free carrier concentration, as determined from the dopant ionization energy, shows a strong material-system-specificmore » dependence, leading to different degrees of asymmetry in carrier concentration for the three types of LEDs. We attribute the EQE variation of the red, blue, and DUV LEDs to the different degrees of asymmetry in carrier concentration, which can be exacerbated at cryogenic temperatures. As for the EQE variation with temperature in a high-current density regime, the efficiency droop for the AlGaInP red and GaInN blue LEDs becomes more apparent as temperature decreases, due to the deterioration of the asymmetry in carrier concentration. However, the EQE of the AlGaN DUV LED initially decreases, then reaches an EQE minimum point, and then increases again due to the field-ionization of acceptors by the Poole-Frenkel effect. The results elucidate that carrier transport phenomena allow for the understanding of the droop phenomenon across different material systems, temperatures, and current densities.« less

  9. HUBBLE IDENTIFIES SOURCE OF ULTRAVIOLET LIGHT IN AN OLD GALAXY

    NASA Technical Reports Server (NTRS)

    2002-01-01

    Hubble Space Telescope's exquisite resolution has allowed astronomers to resolve, for the first time, hot blue stars deep inside an elliptical galaxy. The swarm of nearly 8,000 blue stars resembles a blizzard of snowflakes near the core (lower right) of the neighboring galaxy M32, located 2.5 million light-years away in the constellation Andromeda. Hubble confirms that the ultraviolet light comes from a population of extremely hot helium-burning stars at a late stage in their lives. Unlike the Sun, which burns hydrogen into helium, these old stars exhausted their central hydrogen long ago, and now burn helium into heavier elements. The observations, taken in October 1998, were made with the camera mode of the Space Telescope Imaging Spectrograph (STIS) in ultraviolet light. The STIS field of view is only a small portion of the entire galaxy, which is 20 times wider on the sky. For reference, the full moon is 70 times wider than the STIS field-of-view. The bright center of the galaxy was placed on the right side of the image, allowing fainter stars to be seen on the left side of the image. These results are to be published in the March 1, 2000 issue of The Astrophysical Journal. Thirty years ago, the first ultraviolet observations of elliptical galaxies showed that they were surprisingly bright when viewed in ultraviolet light. Before those pioneering UV observations, old groups of stars were assumed to be relatively cool and thus extremely faint in the ultraviolet. Over the years since the initial discovery of this unexpected ultraviolet light, indirect evidence has accumulated that it originates in a population of old, but hot, helium-burning stars. Now Hubble provides the first direct visual evidence. Nearby elliptical galaxies are thought to be relatively simple galaxies comprised of old stars. Because they are among the brightest objects in the Universe, this simplicity makes them useful for tracing the evolution of stars and galaxies. Credits: NASA and Thomas

  10. Naturally formed graded junction for organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Shao, Yan; Yang, Yang

    2003-09-01

    In this letter, we report naturally-formed graded junctions (NFGJ) for organic light-emitting diodes (OLEDs). These junctions are fabricated using single thermal evaporation boat loaded with uniformly mixed charge transport and light-emitting materials. Upon heating, materials sublimate sequentially according to their vaporizing temperatures forming the graded junction. Two kinds of graded structures, sharp and shallow graded junctions, can be formed based on the thermal properties of the selected materials. The NFGJ OLEDs have shown excellent performance in both brightness and lifetime compared with heterojunction devices.

  11. Light up-conversion from near-infrared to blue using a photoresponsive organic light-emitting device

    NASA Astrophysics Data System (ADS)

    Chikamatsu, Masayuki; Ichino, Yoshiro; Takada, Noriyuki; Yoshida, Manabu; Kamata, Toshihide; Yase, Kiyoshi

    2002-07-01

    A photoresponsive organic light-emitting device combining blue-emitting organic electroluminescent (EL) diode with titanyl phthalocyanine as a near-infrared (IR) sensitive layer was fabricated. By irradiating near-IR light to the device, blue emission occurred in the lower drive voltage (between 5 and 12 V). The result indicates that the device acts as a light switch and/or an up-converter from near-IR light (1.6 eV) to blue (2.6 eV). The EL response times of rise and decay using a near-IR light trigger were 260 and 330 mus, respectively. At a higher voltage (above 12 V), enhancement of blue emission was observed with near-IR light irradiation. The ON/OFF ratio reached a maximum of 103.

  12. Compact light-emitting diode lighting ring for video-assisted thoracic surgery.

    PubMed

    Lu, Ming-Kuan; Chang, Feng-Chen; Wang, Wen-Zhe; Hsieh, Chih-Cheng; Kao, Fu-Jen

    2014-01-01

    In this work, a foldable ring-shaped light-emitting diode (LED) lighting assembly, designed to attach to a rubber wound retractor, is realized and tested through porcine animal experiments. Enabled by the small size and the high efficiency of LED chips, the lighting assembly is compact, flexible, and disposable while providing direct and high brightness lighting for more uniform background illumination in video-assisted thoracic surgery (VATS). When compared with a conventional fiber bundle coupled light source that is usually used in laparoscopy and endoscopy, the much broader solid angle of illumination enabled by the LED assembly allows greatly improved background lighting and imaging quality in VATS.

  13. Reinventing a p-type doping process for stable ZnO light emitting devices

    NASA Astrophysics Data System (ADS)

    Xie, Xiuhua; Li, Binghui; Zhang, Zhenzhong; Shen, Dezhen

    2018-06-01

    A tough challenge for zinc oxide (ZnO) as the ultraviolet optoelectronics materials is realizing the stable and reliable p-type conductivity. Self-compensation, coming from native donor-type point defects, is a big obstacle. In this work, we introduce a dynamic N doping process with molecular beam epitaxy, which is accomplished by a Zn, N-shutter periodic switch (a certain time shift between them for independent optimization of surface conditions). During the epitaxy, N adatoms are incorporated under the condition of (2  ×  2)  +  Zn vacancies reconstruction on a Zn-polar surface, at which oxygen vacancies (V O), the dominating compensating donors, are suppressed. With the p-ZnO with sufficient holes surviving, N concentration ~1  ×  1019 cm‑3, is employed in a p-i-n light emitting devices. Significant ultraviolet emission of electroluminescence spectra without broad green band (related to V O) at room-temperature are demonstrated. The devices work incessantly without intentional cooling for over 300 h at a luminous intensity reduction of one order of magnitude under the driving of a 10 mA continuous current, which are the demonstration for p-ZnO stability and reliability.

  14. Light extraction from organic light-emitting diodes for lighting applications by sand-blasting substrates.

    PubMed

    Chen, Shuming; Kwok, Hoi Sing

    2010-01-04

    Light extraction from organic light-emitting diodes (OLEDs) by scattering the light is one of the effective methods for large-area lighting applications. In this paper, we present a very simple and cost-effective method to rough the substrates and hence to scatter the light. By simply sand-blasting the edges and back-side surface of the glass substrates, a 20% improvement of forward efficiency has been demonstrated. Moreover, due to scattering effect, a constant color over all viewing angles and uniform light pattern with Lambertian distribution has been obtained. This simple and cost-effective method may be suitable for mass production of large-area OLEDs for lighting applications.

  15. Hybrid daylight/light-emitting diode illumination system for indoor lighting.

    PubMed

    Ge, Aiming; Qiu, Peng; Cai, Jinlin; Wang, Wei; Wang, Junwei

    2014-03-20

    A hybrid illumination method using both daylight and light-emitting diodes (LEDs) for indoor lighting is presented in this study. The daylight can be introduced into the indoor space by a panel-integration system. The daylight part and LEDs are combined within a specific luminaire that can provide uniform illumination. The LEDs can be turned on and dimmed through closed-loop control when the daylight illuminance is inadequate. We simulated the illumination and calculated the indoor lighting efficiency of our hybrid daylight and LED lighting system, and compared this with that of LED and fluorescent lighting systems. Simulation results show that the efficiency of the hybrid daylight/LED illumination method is better than that of LED and traditional lighting systems, under the same lighting conditions and lighting time; the method has hybrid lighting average energy savings of T5 66.28%, and that of the LEDs is 41.62%.

  16. GALEX 1st Light Near and Far Ultraviolet -100

    NASA Image and Video Library

    2003-05-28

    NASA's Galaxy Evolution Explorer took this image on May 21 and 22, 2003. The image was made from data gathered by the two channels of the spacecraft camera during the mission's "first light" milestone. It shows about 100 celestial objects in the constellation Hercules. The reddish objects represent those detected by the camera's near ultraviolet channel over a 5-minute period, while bluish objects were detected over a 3-minute period by the camera's far ultraviolet channel. The Galaxy Evolution Explorer's first light images are dedicated to the crew of the Space Shuttle Columbia. The Hercules region was directly above Columbia when it made its last contact with NASA Mission Control on February 1, over the skies of Texas. The Galaxy Evolution Explorer launched on April 28 on a mission to map the celestial sky in the ultraviolet and determine the history of star formation in the universe over the last 10 billion years. http://photojournal.jpl.nasa.gov/catalog/PIA04281

  17. GaN light-emitting device based on ionic liquid electrolyte

    NASA Astrophysics Data System (ADS)

    Hirai, Tomoaki; Sakanoue, Tomo; Takenobu, Taishi

    2018-06-01

    Ionic liquids (ILs) are attractive materials for fabricating unique hybrid devices based on electronics and electrochemistry; thus, IL-gated transistors and organic light-emitting devices of light-emitting electrochemical cells (LECs) are investigated for future low-voltage and high-performance devices. In LECs, voltage application induces the formation of electrochemically doped p–n homojunctions owing to ion rearrangements in composites of semiconductors and electrolytes, and achieves electron–hole recombination for light emission at the homojunctions. In this work, we applied this concept of IL-induced electrochemical doping to the fabrication of GaN-based light-emitting devices. We found that voltage application to the layered IL/GaN structure accumulated electrons on the GaN surface owing to ion rearrangements and improved the conductivity of GaN. The ion rearrangement also enabled holes to be injected by the strong electric field of electric double layers on hole injection contacts. This simultaneous injection of holes and electrons into GaN mediated by ions achieves light emission at a low voltage of around 3.4 V. The light emission from the simple IL/GaN structure indicates the usefulness of an electrochemical technique in generating light emission with great ease of fabrication.

  18. Investigation of organic light emitting diodes for interferometric purposes

    NASA Astrophysics Data System (ADS)

    Pakula, Anna; Zimak, Marzena; Sałbut, Leszek

    2011-05-01

    Recently the new type of light source has been introduced to the market. Organic light emitting diode (OLED) is not only interesting because of the low applying voltage, wide light emitting areas and emission efficiency. It gives the possibility to create a light source of a various shape, various color and in the near future very likely even the one that will change shape and spectrum in time in controlled way. Those opportunities have not been in our reach until now. In the paper authors try to give an answer to the question if the new light source -OLED - is suitable for interferometric purposes. Tests cover the short and long term spectrum stability, spectrum changes due to the emission area selection. In the paper the results of two OLEDs (red and white) are shown together with the result of an attempt to use them in an interferometric setup.

  19. Method of making organic light emitting devices

    DOEpatents

    Shiang, Joseph John [Niskayuna, NY; Janora, Kevin Henry [Schenectady, NY; Parthasarathy, Gautam [Saratoga Springs, NY; Cella, James Anthony [Clifton Park, NY; Chichak, Kelly Scott [Clifton Park, NY

    2011-03-22

    The present invention provides a method for the preparation of organic light-emitting devices comprising a bilayer structure made by forming a first film layer comprising an electroactive material and an INP precursor material, and exposing the first film layer to a radiation source under an inert atmosphere to generate an interpenetrating network polymer composition comprising the electroactive material. At least one additional layer is disposed on the reacted first film layer to complete the bilayer structure. The bilayer structure is comprised within an organic light-emitting device comprising standard features such as electrodes and optionally one or more additional layers serving as a bipolar emission layer, a hole injection layer, an electron injection layer, an electron transport layer, a hole transport layer, exciton-hole transporting layer, exciton-electron transporting layer, a hole transporting emission layer, or an electron transporting emission layer.

  20. Light Emitting Diode Flashlights as Effective and Inexpensive Light Sources for Fluorescence Microscopy

    PubMed Central

    Robertson, J. Brian; Zhang, Yunfei; Johnson, Carl Hirschie

    2009-01-01

    Summary Light-emitting diodes (LEDs) are becoming more commonly used as light sources for fluorescence microscopy. We describe the adaptation of a commercially available LED flashlight for use as a source for fluorescence excitation. This light source is long-lived, inexpensive, and is effective for excitation in the range of 440–600 nm. PMID:19772530

  1. Soft lithography microlens fabrication and array for enhanced light extraction from organic light emitting diodes (OLEDs)

    DOEpatents

    Leung, Wai Y.; Park, Joong-Mok; Gan, Zhengqing; Constant, Kristen P.; Shinar, Joseph; Shinar, Ruth; ho, Kai-Ming

    2014-06-03

    Provided are microlens arrays for use on the substrate of OLEDs to extract more light that is trapped in waveguided modes inside the devices and methods of manufacturing same. Light extraction with microlens arrays is not limited to the light emitting area, but is also efficient in extracting light from the whole microlens patterned area where waveguiding occurs. Large microlens array, compared to the size of the light emitting area, extract more light and result in over 100% enhancement. Such a microlens array is not limited to (O)LEDs of specific emission, configuration, pixel size, or pixel shape. It is suitable for all colors, including white, for microcavity OLEDs, and OLEDs fabricated directly on the (modified) microlens array.

  2. Light-Emitting Diodes: Learning New Physics

    ERIC Educational Resources Information Center

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the third paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide the readers with the description of experiments and pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper, published…

  3. Light-Emitting Diodes: Solving Complex Problems

    ERIC Educational Resources Information Center

    Planinšic, Gorazd; Etkina, Eugenia

    2015-01-01

    This is the fourth paper in our Light-Emitting Diodes series. The series aims to create a systematic library of LED-based materials and to provide readers with the description of experiments and the pedagogical treatment that would help their students construct, test, and apply physics concepts and mathematical relations. The first paper provided…

  4. Light-emitting diode technology status and directions: Opportunities for horticultural lighting

    DOE PAGES

    Tsao, Jeffrey Y.; Pattison, P. Morgan; Krames, Michael R.

    2016-01-01

    Here, light-emitting diode (LED) technology has advanced rapidly over the last decade, primarily driven by display and general illumination applications ("solid-state lighting (SSL) for humans"). These advancements have made LED lighting technically and economically advantageous not only for these applications, but also, as an indirect benefit, for adjacent applications such as horticultural lighting ("SSL for plants"). Moreover, LED technology has much room for continued improvement. In the near-term, these improvements will continue to be driven by SSL for humans (with indirect benefit to SSL for plants), the most important of which can be anticipated.

  5. Finding the Acceleration and Speed of a Light-Emitting Object on an Inclined Plane with a Smartphone Light Sensor

    ERIC Educational Resources Information Center

    Kapucu, Serkan

    2017-01-01

    This study investigates how the acceleration and speed of a light-emitting object on an inclined plane may be determined using a smartphone's light sensor. A light-emitting object was released from the top of an inclined plane and its illuminance values were detected by a smartphone's light sensor during its subsequent motion down the plane. Using…

  6. High Intensity Organic Light-emitting Diodes

    NASA Astrophysics Data System (ADS)

    Qi, Xiangfei

    This thesis is dedicated to the fabrication, modeling, and characterization to achieve high efficiency organic light-emitting diodes (OLEDs) for illumination applications. Compared to conventional lighting sources, OLEDs enabled the direct conversion of electrical energy into light emission and have intrigued the world's lighting designers with the long-lasting, highly efficient illumination. We begin with a brief overview of organic technology, from basic organic semiconductor physics, to its application in optoelectronics, i.e. light-emitting diodes, photovoltaics, photodetectors and thin-film transistors. Due to the importance of phosphorescent materials, we will focus on the photophysics of metal complexes that is central to high efficiency OLED technology, followed by a transient study to examine the radiative decay dynamics in a series of phosphorescent platinum binuclear complexes. The major theme of this thesis is the design and optimization of a novel architecture where individual red, green and blue phosphorescent OLEDs are vertically stacked and electrically interconnected by the compound charge generation layers. We modeled carrier generation from the metal-oxide/doped organic interface based on a thermally assisted tunneling mechanism. The model provides insights to the optimization of a stacked OLED from both electrical and optical point of view. To realize the high intensity white lighting source, the efficient removal of heat is of a particular concern, especially in large-area devices. A fundamental transfer matrix analysis is introduced to predict the thermal properties in the devices. The analysis employs Laplace transforms to determine the response of the system to the combined effects of conduction, convection, and radiation. This perspective of constructing transmission matrices greatly facilitates the calculation of transient coupled heat transfer in a general multi-layer composite. It converts differential equations to algebraic forms, and

  7. Interband Tunneling for Hole Injection in III-Nitride Ultraviolet Emitters

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Zhang, Yuewei; Krishnamoorthy, Sriram; Johnson, Jared M.

    Low p-type conductivity and high contact resistance remain a critical problem in wide band gap AlGaN-based ultraviolet light emitters due to the high acceptor ionization energy. In this work, interband tunneling is demonstrated for non-equilibrium injection of holes through the use of ultra-thin polarization-engineered layers that enhance tunneling probability by several orders of magnitude over a PN homojunction. Al 0.3Ga 0.7N interband tunnel junctions with a lowresistance of 5.6 × 10 -4 Ω cm 2 were obtained and integrated on ultraviolet light emitting diodes.Tunnel injection of holes was used to realize GaN-free ultraviolet light emitters with bottom and top n-typemore » Al 0.3Ga 0.7N contacts. At an emission wavelength of 327 nm, stable output power of 6 W/cm 2 at a current density of 120 A/cm 2 with a forward voltage of 5.9 V was achieved. Our demonstration of efficient interband tunneling could enable device designs for higher efficiency ultraviolet emitters.« less

  8. LIGHT-EMITTING DIODE TECHNOLOGY IMPROVES INSECT TRAPPING

    PubMed Central

    GILLEN, JONATHON I.; MUNSTERMANN, LEONARD E.

    2008-01-01

    In a climate of increased funding for vaccines, chemotherapy, and prevention of vector-borne diseases, fewer resources have been directed toward improving disease and vector surveillance. Recently developed light-emitting diode (LED) technology was applied to standard insect-vector traps to produce a more effective lighting system. This approach improved phlebotomine sand fly capture rates by 50%, and simultaneously reduced the energy consumption by 50–60%. The LEDs were incorporated into 2 lighting designs, 1) a LED combination bulb for current light traps and 2) a chip-based LED design for a modified Centers for Disease Control and Prevention light trap. Detailed descriptions of the 2 designs are presented. PMID:18666546

  9. Blue-light emitting electrochemical cells comprising pyrene-imidazole derivatives

    NASA Astrophysics Data System (ADS)

    Lee, Hyeonji; Sunesh, Chozhidakath Damodharan; Subeesh, Madayanad Suresh; Choe, Youngson

    2018-04-01

    Light-emitting electrochemical cells (LECs), the next-generation lighting sources are the potential replacements for organic light-emitting diodes (OLEDs). In recent years, organic small molecules (SMs) have established the applicability in solid-state lighting, and considered as prospective active materials for LECs with higher device performance. Here, we describe the synthesis of pyrene-imidazole based SMs, PYR1, and PYR2 that differ by one pyrene unit and their characterization by various spectroscopic methods. To investigate the thermal, photophysical, and electrochemical properties of the two synthesized compounds, we performed thermogravimetric, UV-visible, photoluminescence (PL), and voltammetric measurements. The photoluminescence (PL) emission spectra of PYR1 and PYR2 measured in the acetonitrile solution, where PYR1 and PYR2 emit in the blue spectral region with peaks aligned at 383 nm and 389 nm, respectively. The fabricated LEC devices exhibited broader electroluminescence (EL) spectra with a significant red shift of the emission maxima to 446 nm and 487 nm, with CIE coordinates of (0.17, 0.18) and (0.18, 0.25) for PYR1 and PYR2, respectively. The LECs based on PYR1 and PYR2 produced maximum brightness values of 180 and 72 cd m-2 and current densities of 55 and 27 mA cm-2, respectively.

  10. Saturn's Rings in Ultraviolet Light

    NASA Image and Video Library

    2017-12-08

    Saturn's Rings in Ultraviolet Light Credit: NASA and E. Karkoschka (University of Arizona) The Hubble Space Telescope is a project of international cooperation between NASA and the European Space Agency. NASA's Goddard Space Flight Center manages the telescope. The Space Telescope Science Institute conducts Hubble science operations. Goddard is responsible for HST project management, including mission and science operations, servicing missions, and all associated development activities. To learn more about the Hubble Space Telescope go here: www.nasa.gov/mission_pages/hubble/main/index.html

  11. Method to generate high efficient devices which emit high quality light for illumination

    DOEpatents

    Krummacher, Benjamin C.; Mathai, Mathew; Choong, Vi-En; Choulis, Stelios A.

    2009-06-30

    An electroluminescent apparatus includes an OLED device emitting light in the blue and green spectrums, and at least one down conversion layer. The down conversion layer absorbs at least part of the green spectrum light and emits light in at least one of the orange spectra and red spectra.

  12. An intraocular micro light-emitting diode device for endo-illumination during pars plana vitrectomy.

    PubMed

    Koelbl, Philipp S; Lingenfelder, Christian; Spraul, Christoph W; Kampmeier, Juergen; Koch, Frank Hj; Kim, Yong Keun; Hessling, Martin

    2018-03-01

    Development of a new, fiber-free, single-use endo-illuminator for pars plana vitrectomy as a replacement for fiber-based systems with external light sources. The hand-guided intraocularly placed white micro light-emitting diode is evaluated for its illumination properties and potential photochemical and thermal hazards. A micro light-emitting diode was used to develop a single-use intraocular illumination system. The light-source-on-tip device was implemented in a prototype with 23G trocar compatible outer diameter of 0.6 mm. The experimental testing was performed on porcine eyes. All calculations of possible photochemical and thermal hazards during the application of the intraocular micro light-emitting diode were calculated according to DIN EN ISO 15007-2: 2014. The endo-illuminator generated a homogeneous and bright illumination of the intraocular space. The color impression was physiologic and natural. Contrary to initial apprehension, the possible risk caused by inserting a light-emitting diode into the intraocular vitreous was much smaller when compared to conventional fiber-based illumination systems. The photochemical and thermal hazards allowed a continuous exposure time to the retina of at least 4.7 h. This first intraocular light source showed that a light-emitting diode can be introduced into the eye. The system can be built as single-use illumination system. This light-source-on-tip light-emitting diode-endo-illumination combines a chandelier wide-angle illumination with an adjustable endo-illuminator.

  13. CHALLENGES OF COMBINED SEWER OVERFLOW DISINFECTION BY ULTRAVIOLET LIGHT IRRADIATION

    EPA Science Inventory

    This article examines the performance and effectiveness of ultraviolet (UV) light irradiation for disinfection of combined sewer overflow (CSO). Due to the negative impact of conventional water disinfectants on aquatic life, new agents (e.g., UV light) are being investigated for ...

  14. Improvement of electrical and optical properties of p-GaN Ohmic metals under ultraviolet light irradiation annealing processes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Chae, S.W.; Yoon, S.K.; Kwak, J.S.

    2006-05-15

    We report the improvement of electrical and optical properties of p-GaN Ohmic metals, ZnNi(10 nm)/Au(10 nm), by ultraviolet (UV) light irradiation. After UV light irradiation, the specific contact resistance of p-GaN decreased slightly from 2.99x10{sup -4} to 2.54x10{sup -4} {omega} cm{sup 2}, while the transmittance of the contact layer increased form 75% to 85% at a wavelength of 460 nm. In addition, the forward voltage of InGaN/GaN light-emitting diode chip at 20 mA decreased from 3.55 to 3.45 V, and the output power increased form 18 to 25 mW by UV light irradiation. The low resistance and high transmittance ofmore » the p-GaN Ohmic metals are attributed to the reduced Shottky barrier by the formation of gallium oxide and the increased oxidation of p-Ohmic metals, respectively, due to ozone generated form oxygen during UV light irradiation.« less

  15. Recent advances in light outcoupling from white organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Gather, Malte C.; Reineke, Sebastian

    2015-01-01

    Organic light-emitting diodes (OLEDs) have been successfully introduced to the smartphone display market and have geared up to become contenders for applications in general illumination where they promise to combine efficient generation of white light with excellent color quality, glare-free illumination, and highly attractive designs. Device efficiency is the key requirement for such white OLEDs, not only from a sustainability perspective, but also because at the high brightness required for general illumination, losses lead to heating and may, thus, cause rapid device degradation. The efficiency of white OLEDs increased tremendously over the past two decades, and internal charge-to-photon conversion can now be achieved at ˜100% yield. However, the extraction of photons remains rather inefficient (typically <30%). Here, we provide an introduction to the underlying physics of outcoupling in white OLEDs and review recent progress toward making light extraction more efficient. We describe how structures that scatter, refract, or diffract light can be attached to the outside of white OLEDs (external outcoupling) or can be integrated close to the active layers of the device (internal outcoupling). Moreover, the prospects of using top-emitting metal-metal microcavity designs for white OLEDs and of tuning the average orientation of the emissive molecules within the OLED are discussed.

  16. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    DOEpatents

    Li, Ting [Ventura, CA

    2011-04-26

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE process is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.

  17. Non-Toxic Gold Nanoclusters for Solution-Processed White Light-Emitting Diodes.

    PubMed

    Chao, Yu-Chiang; Cheng, Kai-Ping; Lin, Ching-Yi; Chang, Yu-Li; Ko, Yi-Yun; Hou, Tzu-Yin; Huang, Cheng-Yi; Chang, Walter H; Lin, Cheng-An J

    2018-06-11

    Solution-processed optoelectronic devices are attractive because of the potential low-cost fabrication and the compatibility with flexible substrate. However, the utilization of toxic elements such as lead and cadmium in current optoelectronic devices on the basis of colloidal quantum dots raises environmental concerns. Here we demonstrate that white-light-emitting diodes can be achieved by utilizing non-toxic and environment-friendly gold nanoclusters. Yellow-light-emitting gold nanoclusters were synthesized and capped with trioctylphosphine. These gold nanoclusters were then blended with the blue-light-emitting organic host materials to form the emissive layer. A current efficiency of 0.13 cd/A was achieved. The Commission Internationale de l'Eclairage chromaticity coordinates of (0.27, 0.33) were obtained from our experimental analysis, which is quite close to the ideal pure white emission coordinates (0.33, 0.33). Potential applications include innovative lighting devices and monitor backlight.

  18. Laterally injected light-emitting diode and laser diode

    DOEpatents

    Miller, Mary A.; Crawford, Mary H.; Allerman, Andrew A.

    2015-06-16

    A p-type superlattice is used to laterally inject holes into an III-nitride multiple quantum well active layer, enabling efficient light extraction from the active area. Laterally-injected light-emitting diodes and laser diodes can enable brighter, more efficient devices that impact a wide range of wavelengths and applications. For UV wavelengths, applications include fluorescence-based biological sensing, epoxy curing, and water purification. For visible devices, applications include solid state lighting and projection systems.

  19. Stolephorus sp Behavior in Different LED (Light Emitting Diode) Color and Light Intensities

    NASA Astrophysics Data System (ADS)

    Fitri Aristi, D. P.; Ramadanita, I. A.; Hapsari, T. D.; Susanto, A.

    2018-02-01

    This research aims to observe anchovy (Stolephorus sp) behavior under different LED light intensities that affect eye physiology (cell cone structure). The materials used were Stolephorus sp taken from the waters off Jepara and 13 and 10 watt light emitting diode (LED). The research method was an experiment conducted from March through August 2015 in the waters off Jepara. Data analysis of visual histology and fish respond was carried out at the fishing gear material laboratory, anatomy and cultivate. Cone cell structure (mosaic cone) of Stolephorus sp forms a connected regular square pattern with every single cone surrounded by four double cones, which indicate that anchovies are sensitive to light. The 13 watt LED (628 lux) has faster response than the 10 watt LED (531 lux) as it has wider and higher emitting intensity, which also attracts fish to gather quicker.

  20. Pure white-light emitting ultrasmall organic-inorganic hybrid perovskite nanoclusters.

    PubMed

    Teunis, Meghan B; Lawrence, Katie N; Dutta, Poulami; Siegel, Amanda P; Sardar, Rajesh

    2016-10-14

    Organic-inorganic hybrid perovskites, direct band-gap semiconductors, have shown tremendous promise for optoelectronic device fabrication. We report the first colloidal synthetic approach to prepare ultrasmall (∼1.5 nm diameter), white-light emitting, organic-inorganic hybrid perovskite nanoclusters. The nearly pure white-light emitting ultrasmall nanoclusters were obtained by selectively manipulating the surface chemistry (passivating ligands and surface trap-states) and controlled substitution of halide ions. The nanoclusters displayed a combination of band-edge and broadband photoluminescence properties, covering a major part of the visible region of the solar spectrum with unprecedentedly large quantum yields of ∼12% and photoluminescence lifetime of ∼20 ns. The intrinsic white-light emission of perovskite nanoclusters makes them ideal and low cost hybrid nanomaterials for solid-state lighting applications.

  1. Organic light emitting board for dynamic interactive display

    PubMed Central

    Kim, Eui Hyuk; Cho, Sung Hwan; Lee, Ju Han; Jeong, Beomjin; Kim, Richard Hahnkee; Yu, Seunggun; Lee, Tae-Woo; Shim, Wooyoung; Park, Cheolmin

    2017-01-01

    Interactive displays involve the interfacing of a stimuli-responsive sensor with a visual human-readable response. Here, we describe a polymeric electroluminescence-based stimuli-responsive display method that simultaneously detects external stimuli and visualizes the stimulant object. This organic light-emitting board is capable of both sensing and direct visualization of a variety of conductive information. Simultaneous sensing and visualization of the conductive substance is achieved when the conductive object is coupled with the light emissive material layer on application of alternating current. A variety of conductive materials can be detected regardless of their work functions, and thus information written by a conductive pen is clearly visualized, as is a human fingerprint with natural conductivity. Furthermore, we demonstrate that integration of the organic light-emitting board with a fluidic channel readily allows for dynamic monitoring of metallic liquid flow through the channel, which may be suitable for biological detection and imaging applications. PMID:28406151

  2. Organic light-emitting devices using spin-dependent processes

    DOEpatents

    Vardeny, Z. Valy; Wohlgenannt, Markus

    2010-03-23

    The maximum luminous efficiency of organic light-emitting materials is increased through spin-dependent processing. The technique is applicable to all electro-luminescent processes in which light is produced by singlet exciton decay, and all devices which use such effects, including LEDs, super-radiant devices, amplified stimulated emission devices, lasers, other optical microcavity devices, electrically pumped optical amplifiers, and phosphorescence (Ph) based light emitting devices. In preferred embodiments, the emissive material is doped with an impurity, or otherwise modified, to increase the spin-lattice relaxation rate (i.e., decrease the spin-lattice time), and hence raise the efficiency of the device. The material may be a polymer, oligomer, small molecule, single crystal, molecular crystal, or fullerene. The impurity is preferably a magnetic or paramagnetic substance. The invention is applicable to IR, UV, and other electromagnetic radiation generation and is thus not limited to the visible region of the spectrum. The methods of the invention may also be combined with other techniques used to improve device performance.

  3. Organic light emitting board for dynamic interactive display

    NASA Astrophysics Data System (ADS)

    Kim, Eui Hyuk; Cho, Sung Hwan; Lee, Ju Han; Jeong, Beomjin; Kim, Richard Hahnkee; Yu, Seunggun; Lee, Tae-Woo; Shim, Wooyoung; Park, Cheolmin

    2017-04-01

    Interactive displays involve the interfacing of a stimuli-responsive sensor with a visual human-readable response. Here, we describe a polymeric electroluminescence-based stimuli-responsive display method that simultaneously detects external stimuli and visualizes the stimulant object. This organic light-emitting board is capable of both sensing and direct visualization of a variety of conductive information. Simultaneous sensing and visualization of the conductive substance is achieved when the conductive object is coupled with the light emissive material layer on application of alternating current. A variety of conductive materials can be detected regardless of their work functions, and thus information written by a conductive pen is clearly visualized, as is a human fingerprint with natural conductivity. Furthermore, we demonstrate that integration of the organic light-emitting board with a fluidic channel readily allows for dynamic monitoring of metallic liquid flow through the channel, which may be suitable for biological detection and imaging applications.

  4. Fabrication of silver nanowires and metal oxide composite transparent electrodes and their application in UV light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Yan, Xingzhen; Ma, Jiangang; Xu, Haiyang; Wang, Chunliang; Liu, Yichun

    2016-08-01

    In this paper, we prepared the silver nanowires (AgNWs)/aluminum-doped zinc oxide (AZO) composite transparent conducting electrodes for n-ZnO/p-GaN heterojunction light emitting-diodes (LEDs) by drop casting AgNW networks and subsequent atomic layer deposition (ALD) of AZO at 150 °C. The contact resistances between AgNWs were dramatically reduced by pre-annealing in the vacuum chamber before the ALD of AZO. In this case, AZO works not only as the conformal passivation layer that protects AgNWs from oxidation, but also as the binding material that improves AgNWs adhesion to substrates. Due to the localized surface plasmons (LSPs) of the AgNWs resonant coupling with the ultraviolet (UV) light emission from the LEDs, a higher UV light extracting efficiency is achieved from LEDs with the AgNWs/AZO composite electrodes in comparison with the conventional AZO electrodes. Additionally, the antireflective nature of random AgNW networks in the composite electrodes caused a broad output light angular distribution, which could be of benefit to certain optoelectronic devices like LEDs and solar cells.

  5. Monolithic Inorganic ZnO/GaN Semiconductors Heterojunction White Light-Emitting Diodes.

    PubMed

    Jeong, Seonghoon; Oh, Seung Kyu; Ryou, Jae-Hyun; Ahn, Kwang-Soon; Song, Keun Man; Kim, Hyunsoo

    2018-01-31

    Monolithic light-emitting diodes (LEDs) that can generate white color at the one-chip level without the wavelength conversion through packaged phosphors or chip integration for photon recycling are of particular importance to produce compact, cost-competitive, and smart lighting sources. In this study, monolithic white LEDs were developed based on ZnO/GaN semiconductor heterojunctions. The electroluminescence (EL) wavelength of the ZnO/GaN heterojunction could be tuned by a post-thermal annealing process, causing the generation of an interfacial Ga 2 O 3 layer. Ultraviolet, violet-bluish, and greenish-yellow broad bands were observed from n-ZnO/p-GaN without an interfacial layer, whereas a strong greenish-yellow band emission was the only one observed from that with an interfacial layer. By controlled integration of ZnO/GaN heterojunctions with different postannealing conditions, monolithic white LED was demonstrated with color coordinates in the range (0.3534, 0.3710)-(0.4197, 0.4080) and color temperatures of 4778-3349 K in the Commission Internationale de l'Eclairage 1931 chromaticity diagram. Furthermore, the monolithic white LED produced approximately 2.1 times higher optical output power than a conventional ZnO/GaN heterojunction due to the carrier confinement effect at the Ga 2 O 3 /n-ZnO interface.

  6. Superluminescent light emitting diodes: the best out of two worlds

    NASA Astrophysics Data System (ADS)

    Rossetti, M.; Napierala, J.; Matuschek, N.; Achatz, U.; Duelk, M.; Vélez, C.; Castiglia, A.; Grandjean, N.; Dorsaz, J.; Feltin, E.

    2012-03-01

    Since pico-projectors were starting to become the next electronic "must-have" gadget, the experts were discussing which light-source technology seems to be the best for the existing three major projection approaches for the optical scanning module such as digital light processing, liquid crystal on silica and laser beam steering. Both so-far used light source technologies have distinct advantages and disadvantages. Though laser-based pico-projectors are focus-free and deliver a wider color gamut, their major disadvantages are speckle noise, cost and safety issues. In contrast, projectors based on cheaper Light Emitting Diodes (LEDs) as light source are criticized for a lack of brightness and for having limited focus. Superluminescent Light Emitting Diodes (SLEDs) are temporally incoherent and spatially coherent light sources merging in one technology the advantages of both Laser Diodes (LDs) and LEDs. With almost no visible speckle noise, focus-free operation and potentially the same color gamut than LDs, SLEDs could potentially answer the question which light source to use in future projector applications. In this quest for the best light source, we realized visible SLEDs emitting both in the red and blue spectral region. While the technology required for the realization of red emitters is already well established, III-nitride compounds required for blue emission have experienced a major development only in relatively recent times and the technology is still under development. The present paper is a review of the status of development reached for the blue superluminescent diodes based on the GaN material system.

  7. Improvements to III-nitride light-emitting diodes through characterization and material growth

    NASA Astrophysics Data System (ADS)

    Getty, Amorette Rose Klug

    A variety of experiments were conducted to improve or aid the improvement of the efficiency of III-nitride light-emitting diodes (LEDs), which are a critical area of research for multiple applications, including high-efficiency solid state lighting. To enhance the light extraction in ultraviolet LEDs grown on SiC substrates, a distributed Bragg reflector (DBR) optimized for operation in the range from 250 to 280 nm has been developed using MBE growth techniques. The best devices had a peak reflectivity of 80% with 19.5 periods, which is acceptable for the intended application. DBR surfaces were sufficiently smooth for subsequent epitaxy of the LED device. During the course of this work, pros and cons of AlGaN growth techniques, including analog versus digital alloying, were examined. This work highlighted a need for more accurate values of the refractive index of high-Al-content AlxGa1-xNin the UV wavelength range. We present refractive index results for a wide variety of materials pertinent to the fabrication of optical III-nitride devices. Characterization was done using Variable-Angle Spectroscopic Ellipsometry. The three binary nitrides, and all three ternaries, have been characterized to a greater or lesser extent depending on material compositions available. Semi-transparent p-contact materials and other thin metals for reflecting contacts have been examined to allow optimization of deposition conditions and to allow highly accurate modeling of the behavior of light within these devices. Standard substrate materials have also been characterized for completeness and as an indicator of the accuracy of our modeling technique. We have demonstrated a new technique for estimating the internal quantum efficiency (IQE) of nitride light-emitting diodes. This method is advantageous over the standard low-temperature photoluminescence-based method of estimating IQE, as the new method is conducted under the same conditions as normal device operation. We have developed

  8. Enhanced light extraction from a GaN-based green light-emitting diode with hemicylindrical linear grating structure.

    PubMed

    Jin, Yuanhao; Yang, Fenglei; Li, Qunqing; Zhu, Zhendong; Zhu, Jun; Fan, Shoushan

    2012-07-02

    Significant enhancement in the light output from GaN-based green light-emitting diodes (LEDs) was achieved with a hemicylindrical grating structure on the top layer of the diodes. The grating structure was first optimized by the finite-difference time-domain (FDTD) method, which showed that the profile of the grating structure was critical for light extraction efficiency. It was found that the transmission efficiency of the 530 nm light emitted from the inside of the GaN LED increased for incidence angles between 23.58° and 60°. Such a structure was fabricated by electron-beam lithography and an etching method. The light output power from the LED was increased approximately 4.7 times compared with that from a conventional LED. The structure optimization is the key to the great increase in transmission efficiency. Furthermore, the light emitted from the edge of the LED units could be collected and extracted by the grating structures in adjacent LED units, thus enhancing the performance of the whole LED chip.

  9. Light emitting diode with high aspect ratio submicron roughness for light extraction and methods of forming

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Ting

    The surface morphology of an LED light emitting surface is changed by applying a reactive ion etch (RIE) process to the light emitting surface. High aspect ratio, submicron roughness is formed on the light emitting surface by transferring a thin film metal hard-mask having submicron patterns to the surface prior to applying a reactive ion etch process. The submicron patterns in the metal hard-mask can be formed using a low cost, commercially available nano-patterned template which is transferred to the surface with the mask. After subsequently binding the mask to the surface, the template is removed and the RIE processmore » is applied for time duration sufficient to change the morphology of the surface. The modified surface contains non-symmetric, submicron structures having high aspect ratio which increase the efficiency of the device.« less

  10. General method to evaluate substrate surface modification techniques for light extraction enhancement of organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Krummacher, B. C.; Mathai, M. K.; Choong, V.; Choulis, S. A.; So, F.; Winnacker, A.

    2006-09-01

    The external light output of organic light emitting diodes (OLEDs) can be increased by modifying the light emitting surface. The apparent light extraction enhancement is given by the ratio between the efficiency of the unmodified device and the efficiency of the modified device. This apparent light extraction enhancement is dependent on the OLED architecture itself and is not the correct value to judge the effectiveness of a technique to enhance light outcoupling due to substrate surface modification. We propose a general method to evaluate substrate surface modification techniques for light extraction enhancement of OLEDs independent from the device architecture. This method is experimentally demonstrated using green electrophosphorescent OLEDs with different device architectures. The substrate surface of these OLEDs was modified by applying a prismatic film to increase light outcoupling from the device stack. It was demonstrated that the conventionally measured apparent light extraction enhancement by means of the prismatic film does not reflect the actual performance of the light outcoupling technique. Rather, by comparing the light extracted out of the prismatic film to that generated in the OLED layers and coupled into the substrate (before the substrate/air interface), a more accurate evaluation of light outcoupling enhancement can be achieved. Furthermore we show that substrate surface modification can change the output spectrum of a broad band emitting OLED.

  11. Thermally evaporated hybrid perovskite for hetero-structured green light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Mariano, Fabrizio; Listorti, Andrea; Rizzo, Aurora; Colella, Silvia; Gigli, Giuseppe; Mazzeo, Marco

    2017-10-01

    Thermal evaporation of green-light emitting perovskite (MaPbBr3) films is reported. Morphological studies show that a soft thermal treatment is needed to induce an outstanding crystal growth and film organization. Hetero-structured light-emitting diodes, embedding as-deposited and annealed MAPbBr3 films as active layers, are fabricated and their performances are compared, highlighting that the perovskite evolution is strongly dependent on the growing substrate, too.

  12. Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

    PubMed Central

    Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

    2017-01-01

    Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was <1%. We posited that this low efficiency was a result of high leakage current caused by poor perovskite morphology, high non-radiative recombination at interfaces and perovskite grain boundaries, and also charge injection imbalance. Here, we incorporated a small amount of methylammonium organic cation into the CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m−2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date. PMID:28589960

  13. Ultra-bright and highly efficient inorganic based perovskite light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Liuqi; Yang, Xiaolei; Jiang, Qi; Wang, Pengyang; Yin, Zhigang; Zhang, Xingwang; Tan, Hairen; Yang, Yang (Michael); Wei, Mingyang; Sutherland, Brandon R.; Sargent, Edward H.; You, Jingbi

    2017-06-01

    Inorganic perovskites such as CsPbX3 (X=Cl, Br, I) have attracted attention due to their excellent thermal stability and high photoluminescence quantum efficiency. However, the electroluminescence quantum efficiency of their light-emitting diodes was <1%. We posited that this low efficiency was a result of high leakage current caused by poor perovskite morphology, high non-radiative recombination at interfaces and perovskite grain boundaries, and also charge injection imbalance. Here, we incorporated a small amount of methylammonium organic cation into the CsPbBr3 lattice and by depositing a hydrophilic and insulating polyvinyl pyrrolidine polymer atop the ZnO electron-injection layer to overcome these issues. As a result, we obtained light-emitting diodes exhibiting a high brightness of 91,000 cd m-2 and a high external quantum efficiency of 10.4% using a mixed-cation perovskite Cs0.87MA0.13PbBr3 as the emitting layer. To the best of our knowledge, this is the brightest and most-efficient green perovskite light-emitting diodes reported to date.

  14. Ultraviolet light-absorbing and emitting diodes consisting of a p-type transparent-semiconducting NiO film deposited on an n-type GaN homoepitaxial layer

    NASA Astrophysics Data System (ADS)

    Nakai, Hiroshi; Sugiyama, Mutsumi; Chichibu, Shigefusa F.

    2017-05-01

    Gallium nitride (GaN) and related (Al,Ga,In)N alloys provide practical benefits in the production of light-emitting diodes (LEDs) and laser diodes operating in ultraviolet (UV) to green wavelength regions. However, obtaining low resistivity p-type AlN or AlGaN of large bandgap energies (Eg) is a critical issue in fabricating UV and deep UV-LEDs. NiO is a promising candidate for useful p-type transparent-semiconducting films because its Eg is 4.0 eV and it can be doped into p-type conductivity of sufficiently low resistivity. By using these technologies, heterogeneous junction diodes consisting of a p-type transparent-semiconducting polycrystalline NiO film on an n-type single crystalline GaN epilayer on a low threading-dislocation density, free-standing GaN substrate were fabricated. The NiO film was deposited by using the conventional RF-sputtering method, and the GaN homoepitaxial layer was grown by metalorganic vapor phase epitaxy. They exhibited a significant photovoltaic effect under UV light and also exhibited an electroluminescence peak at 3.26 eV under forward-biased conditions. From the conduction and valence band (EV) discontinuities, the NiO/GaN heterointerface is assigned to form a staggered-type (TYPE-II) band alignment with the EV of NiO higher by 2.0 eV than that of GaN. A rectifying property that is consistent with the proposed band diagram was observed in the current-voltage characteristics. These results indicate that polycrystalline NiO functions as a hole-extracting and injecting layer of UV optoelectronic devices.

  15. Using Organic Light-Emitting Electrochemical Thin-Film Devices to Teach Materials Science

    ERIC Educational Resources Information Center

    Sevian, Hannah; Muller, Sean; Rudmann, Hartmut; Rubner, Michael F.

    2004-01-01

    Materials science can be taught by applying organic light-emitting electrochemical thin-film devices and in this method students were allowed to make a light-emitting device by spin coating a thin film containing ruthenium (II) complex ions onto a glass slide. Through this laboratory method students are provided with the opportunity to learn about…

  16. Fabrication Methods and Luminescent Properties of ZnO Materials for Light-Emitting Diodes

    PubMed Central

    Lee, Ching-Ting

    2010-01-01

    Zinc oxide (ZnO) is a potential candidate material for optoelectronic applications, especially for blue to ultraviolet light emitting devices, due to its fundamental advantages, such as direct wide band gap of 3.37 eV, large exciton binding energy of 60 meV, and high optical gain of 320 cm−1 at room temperature. Its luminescent properties have been intensively investigated for samples, in the form of bulk, thin film, or nanostructure, prepared by various methods and doped with different impurities. In this paper, we first review briefly the recent progress in this field. Then a comprehensive summary of the research carried out in our laboratory on ZnO preparation and its luminescent properties, will be presented, in which the involved samples include ZnO films and nanorods prepared with different methods and doped with n-type or p-type impurities. The results of ZnO based LEDs will also be discussed.

  17. Reactivation of latent herpes simplex virus infection by ultraviolet light: a human model.

    PubMed

    Perna, J J; Mannix, M L; Rooney, J F; Notkins, A L; Straus, S E

    1987-09-01

    Infection with herpes simplex virus often results in a latent infection of local sensory ganglia and a disease characterized by periodic viral reactivation and mucocutaneous lesions. The factors that trigger reactivation in humans are still poorly defined. In our study, five patients with documented histories of recurrent herpes simplex virus infection on the buttocks or sacrum were exposed to three times their minimal erythema dose of ultraviolet light. Site-specific cutaneous herpes simplex virus infection occurred at 4.4 +/- 0.4 days after exposure to ultraviolet light in 8 of 13 attempts at reactivation. We conclude that ultraviolet light can reactivate herpes simplex virus under experimentally defined conditions. This model in humans should prove useful in evaluating the pathophysiology and prevention of viral reactivation.

  18. Vibrio azureus emits blue-shifted light via an accessory blue fluorescent protein.

    PubMed

    Yoshizawa, Susumu; Karatani, Hajime; Wada, Minoru; Kogure, Kazuhiro

    2012-04-01

    Luminous marine bacteria usually emit bluish-green light with a peak emission wavelength (λ(max) ) at about 490 nm. Some species belonging to the genus Photobacterium are exceptions, producing an accessory blue fluorescent protein (lumazine protein: LumP) that causes a blue shift, from λ(max)  ≈ 490 to λ(max)  ≈ 476 nm. However, the incidence of blue-shifted light emission or the presence of accessory fluorescent proteins in bacteria of the genus Vibrio has never been reported. From our spectral analysis of light emitted by 16 luminous strains of the genus Vibrio, it was revealed that most strains of Vibrio azureus emit a blue-shifted light with a peak at approximately 472 nm, whereas other Vibrio strains emit light with a peak at around 482 nm. Therefore, we investigated the mechanism underlying this blue shift in V. azureus NBRC 104587(T) . Here, we describe the blue-shifted light emission spectra and the isolation of a blue fluorescent protein. Intracellular protein analyses showed that this strain had a blue fluorescent protein (that we termed VA-BFP), the fluorescent spectrum of which was almost identical to that of the in vivo light emission spectrum of the strain. This result strongly suggested that VA-BFP was responsible for the blue-shifted light emission of V. azureus. © 2012 Federation of European Microbiological Societies. Published by Blackwell Publishing Ltd. All rights reserved.

  19. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Films Using Various p-Type Dopants and Their Application to GaN-Based Light-Emitting Diodes.

    PubMed

    Lee, Byeong Ryong; Kim, Tae Geun

    2017-01-01

    This article reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWCNT) films using various p-type dopants and their application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWCNT films on the light-emitting diodes (LEDs), we increased the work function (Φ) of the films using chemical doping with AuCl₃, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) (PEDOT:PSS) and MoO₃; thereby reduced the Schottky barrier height between the RGO/SWCNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWCNT film doped with MoO₃ exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

  20. Reduced Graphene Oxide/Single-Walled Carbon Nanotube Hybrid Film Using Various p-Type Dopants and Its Application to GaN-Based Light-Emitting Diodes.

    PubMed

    Lee, Byeong Ryong; Kim, Tae Geun

    2016-06-01

    This paper reports the electrical and optical properties of the reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films using various p-type dopants and its application to GaN-based light-emitting diodes. To enhance the current injection and spreading of the RGO/SWNT films on the light-emitting diodes (LEDs), we increased the work function (φ) of the films using chemical doping with AuCl3, poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and MoO3; thereby reduced the Schottky barrier height between the RGO/SWNT films and p-GaN. By comparison, LEDs fabricated with work-function-tuned RGO/SWNT film doped with MoO3 exhibited the decrease of the forward voltage from 5.3 V to 5.02 V at 20 mA and the increase of the output power up to 1.26 times. We also analyzed the current injection mechanism using ultraviolet photoelectron spectroscopy and X-ray photoelectron spectroscopy.

  1. Colored lenses suppress blue light-emitting diode light-induced damage in photoreceptor-derived cells.

    PubMed

    Hiromoto, Kaho; Kuse, Yoshiki; Tsuruma, Kazuhiro; Tadokoro, Nobuyuki; Kaneko, Nobuyuki; Shimazawa, Masamitsu; Hara, Hideaki

    2016-03-01

    Blue light-emitting diodes (LEDs) in liquid crystal displays emit high levels of blue light, exposure to which is harmful to the retina. Here, we investigated the protective effects of colored lenses in blue LED light-induced damage to 661W photoreceptor-derived cells. We used eight kinds of colored lenses and one lens that reflects blue light. Moreover, we evaluated the relationship between the protective effects of the lens and the transmittance of lens at 464 nm. Lenses of six colors, except for the SY, PN, and reflective coating lenses, strongly decreased the reduction in cell damage induced by blue LED light exposure. The deep yellow lens showed the most protective effect from all the lenses, but the reflective coating lens and pink lens did not show any effects on photoreceptor-derived cell damage. Moreover, these results were correlated with the lens transmittance of blue LED light (464 nm). These results suggest that lenses of various colors, especially deep yellow lenses, may protect retinal photoreceptor cells from blue LED light in proportion to the transmittance for the wavelength of blue LED and the suppression of reactive oxygen species production and cell damage.

  2. Hazard of ultraviolet radiation emitted in gas tungsten arc welding of aluminum alloys.

    PubMed

    Nakashima, Hitoshi; Utsunomiya, Akihiro; Fujii, Nobuyuki; Okuno, Tsutomu

    2016-01-01

    Ultraviolet radiation (UVR) emitted during arc welding frequently causes keratoconjunctivitis and erythema. The extent of the hazard of UVR varies depending on the welding method and conditions. Therefore, it is important to identify the levels of UVR that are present under various conditions. In this study, we experimentally evaluated the hazard of UVR emitted in gas tungsten arc welding (GTAW) of aluminum alloys. The degree of hazard of UVR is measured by the effective irradiance defined in the American Conference of Governmental Industrial Hygienists guidelines. The effective irradiances measured in this study are in the range 0.10-0.91 mW/cm(2) at a distance of 500 mm from the welding arc. The maximum allowable exposure times corresponding to these levels are only 3.3-33 s/day. This demonstrates that unprotected exposure to UVR emitted by GTAW of aluminum alloys is quite hazardous in practice. In addition, we found the following properties of the hazard of UVR. (1) It is more hazardous at higher welding currents than at lower welding currents. (2) It is more hazardous when magnesium is included in the welding materials than when it is not. (3) The hazard depends on the direction of emission from the arc.

  3. Hazard of ultraviolet radiation emitted in gas tungsten arc welding of aluminum alloys

    PubMed Central

    NAKASHIMA, Hitoshi; UTSUNOMIYA, Akihiro; FUJII, Nobuyuki; OKUNO, Tsutomu

    2015-01-01

    Ultraviolet radiation (UVR) emitted during arc welding frequently causes keratoconjunctivitis and erythema. The extent of the hazard of UVR varies depending on the welding method and conditions. Therefore, it is important to identify the levels of UVR that are present under various conditions. In this study, we experimentally evaluated the hazard of UVR emitted in gas tungsten arc welding (GTAW) of aluminum alloys. The degree of hazard of UVR is measured by the effective irradiance defined in the American Conference of Governmental Industrial Hygienists guidelines. The effective irradiances measured in this study are in the range 0.10–0.91 mW/cm2 at a distance of 500 mm from the welding arc. The maximum allowable exposure times corresponding to these levels are only 3.3–33 s/day. This demonstrates that unprotected exposure to UVR emitted by GTAW of aluminum alloys is quite hazardous in practice. In addition, we found the following properties of the hazard of UVR. (1) It is more hazardous at higher welding currents than at lower welding currents. (2) It is more hazardous when magnesium is included in the welding materials than when it is not. (3) The hazard depends on the direction of emission from the arc. PMID:26632121

  4. Characteristics of ultraviolet light and radicals formed by pulsed discharge in water

    NASA Astrophysics Data System (ADS)

    Sun, Bing; Kunitomo, Shinta; Igarashi, Chiaki

    2006-09-01

    In this investigation, the ultraviolet light characteristics and OH radical properties produced by a pulsed discharge in water were studied. For the plate-rod reactor, it was found that the ultraviolet light energy has a 3.2% total energy injected into the reactor. The ultraviolet light changed with the peak voltage and electrode distance. UV characteristics in tap water and the distilled water are given. The intensity of the OH radicals was the highest for the 40 mm electrode distance reactor. In addition, the properties of hydrogen peroxide and ozone were also studied under arc discharge conditions. It was found that the OH radicals were in the ground state and the excited state when a pulsed arc discharge was used. The ozone was produced by the arc discharge even if the oxygen gas is not bubbled into the reactor. The ozone concentration produces a maximum value with treatment time.

  5. On the AlxGa1-xN/AlyGa1-yN/AlxGa1-xN (x>y) p-electron blocking layer to improve the hole injection for AlGaN based deep ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Chu, Chunshuang; Tian, Kangkai; Fang, Mengqian; Zhang, Yonghui; Li, Luping; Bi, Wengang; Zhang, Zi-Hui

    2018-01-01

    This work proposes the [0001] oriented AlGaN-based deep ultraviolet (DUV) light-emitting diode (LED) possessing a specifically designed p-electron blocking layer (p-EBL) to achieve the high internal quantum efficiency. Both electrons and holes can be efficiently injected into the active region by adopting the Al0.60Ga0.40N/Al0.50Ga0.50N/Al0.60Ga0.40N structured p-EBL, in which a p-Al0.50Ga0.50N layer is embedded into the p-EBL. Moreover, the impact of different thicknesses for the p-Al0.50Ga0.50N insertion layer on the hole and electron injections has also been investigated. Compared with the DUV LED with the bulk p-Al0.60Ga0.40N as the EBL, the proposed LED architectures improve the light output power if the thickness of the p-Al0.50Ga0.50N insertion layer is properly designed.

  6. Transfer Printing Method to Obtain Polarized Light Emission in Organic Light-Emitting Device

    NASA Astrophysics Data System (ADS)

    Noh, Hee Yeon; Park, Chang-sub; Park, Ji-Sub; Kang, Shin-Won; Kim, Hak-Rin

    2012-06-01

    We demonstrate a transfer printing method to obtain polarized light emission in organic light-emitting devices (OLEDs). On a rubbed self-assembled monolayer (SAM), a spin-coated liquid crystalline light-emissive polymer is aligned along the rubbing direction because of the anisotropic interfacial intermolecular interaction. Owing to the low surface energy of the SAM surface, the light-emissive layer was easily transferred to a patterned poly(dimethylsiloxane) (PDMS) stamp surface without degrading the ordering. Finally, a polarized light-emissive OLED device was prepared by transferring the patterned light-emissive layer to the charge transport layer of the OLED structure.

  7. Solution-Grown ZnO Films toward Transparent and Smart Dual-Color Light-Emitting Diode.

    PubMed

    Huang, Xiaohu; Zhang, Li; Wang, Shijie; Chi, Dongzhi; Chua, Soo Jin

    2016-06-22

    An individual light-emitting diode (LED) capable of emitting different colors of light under different bias conditions not only allows for compact device integration but also extends the functionality of the LED beyond traditional illumination and display. Herein, we report a color-switchable LED based on solution-grown n-type ZnO on p-GaN/n-GaN heterojunction. The LED emits red light with a peak centered at ∼692 nm and a full width at half-maximum of ∼90 nm under forward bias, while it emits green light under reverse bias. These two lighting colors can be switched repeatedly by reversing the bias polarity. The bias-polarity-switched dual-color LED enables independent control over the lighting color and brightness of each emission with two-terminal operation. The results offer a promising strategy toward transparent, miniaturized, and smart LEDs, which hold great potential in optoelectronics and optical communication.

  8. Polymer Light-Emitting Diode (PLED) Process Development

    DTIC Science & Technology

    2003-12-01

    conclusions and recommendations for Phase II of the Flexible Display Program. 15. SUBJECT TERMS LIGHT EMITTING DIODES LIQUID CRYSTAL DISPLAY SYSTEMS...space for Phase I and II confined by backplane complexity and substrate form...12 Figure 6. Semi automated I-V curve measurement setup consisting of Keithley power supply, computer and

  9. Experimental effective intensity of steady and flashing light emitting diodes for aircraft anti-collision lighting.

    DOT National Transportation Integrated Search

    2013-08-01

    Research was conducted to determine the effective intensity of flashing lights that incorporate light-emitting diodes (LEDs). LEDs require less power and have the ability to flash without the addition of moving parts. Compared with incandescent bulbs...

  10. Photolithographic patterning of vacuum-deposited organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Tian, P. F.; Burrows, P. E.; Forrest, S. R.

    1997-12-01

    We demonstrate a photolithographic technique to fabricate vacuum-deposited organic light emitting devices. Photoresist liftoff combined with vertical deposition of the emissive organic materials and the metal cathode, followed by oblique deposition of a metal cap, avoids the use of high processing temperatures and the exposure of the organic materials to chemical degradation. The unpackaged devices show no sign of deterioration in room ambient when compared with conventional devices fabricated using low-resolution, shadow mask patterning. Furthermore, the devices are resistant to rapid degradation when operated in air for extended periods. This work illustrates a potential foundation for the volume production of very high-resolution, full color, flat panel displays based on small molecular weight organic light emitting devices.

  11. Electrically and Optically Readable Light Emitting Memories

    PubMed Central

    Chang, Che-Wei; Tan, Wei-Chun; Lu, Meng-Lin; Pan, Tai-Chun; Yang, Ying-Jay; Chen, Yang-Fang

    2014-01-01

    Electrochemical metallization memories based on redox-induced resistance switching have been considered as the next-generation electronic storage devices. However, the electronic signals suffer from the interconnect delay and the limited reading speed, which are the major obstacles for memory performance. To solve this problem, here we demonstrate the first attempt of light-emitting memory (LEM) that uses SiO2 as the resistive switching material in tandem with graphene-insulator-semiconductor (GIS) light-emitting diode (LED). By utilizing the excellent properties of graphene, such as high conductivity, high robustness and high transparency, our proposed LEM enables data communication via electronic and optical signals simultaneously. Both the bistable light-emission state and the resistance switching properties can be attributed to the conducting filament mechanism. Moreover, on the analysis of current-voltage characteristics, we further confirm that the electroluminescence signal originates from the carrier tunneling, which is quite different from the standard p-n junction model. We stress here that the newly developed LEM device possesses a simple structure with mature fabrication processes, which integrates advantages of all composed materials and can be extended to many other material systems. It should be able to attract academic interest as well as stimulate industrial application. PMID:24894723

  12. Reactivation of latent herpes simplex virus infection by ultraviolet light: a human model

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Perna, J.J.; Mannix, M.L.; Rooney, J.F.

    1987-09-01

    Infection with herpes simplex virus often results in a latent infection of local sensory ganglia and a disease characterized by periodic viral reactivation and mucocutaneous lesions. The factors that trigger reactivation in humans are still poorly defined. In our study, five patients with documented histories of recurrent herpes simplex virus infection on the buttocks or sacrum were exposed to three times their minimal erythema dose of ultraviolet light. Site-specific cutaneous herpes simplex virus infection occurred at 4.4 +/- 0.4 days after exposure to ultraviolet light in 8 of 13 attempts at reactivation. We conclude that ultraviolet light can reactivate herpesmore » simplex virus under experimentally defined conditions. This model in humans should prove useful in evaluating the pathophysiology and prevention of viral reactivation.« less

  13. SPEAKING IN LIGHT - Jupiter radio signals as deflections of light-emitting electron beams in a vacuum chamber

    NASA Astrophysics Data System (ADS)

    Petrovic, K.

    2015-10-01

    Light emitting electron beam generated in a vacuum chamber is used as a medium for visualizing Jupiter's electromagnetic radiation. Dual dipole array antenna is receiving HF radio signals that are next amplified to radiate a strong electromagnetic field capable of influencing the propagation of electron beam in plasma. Installation aims to provide a platform for observing the characteristics of light emitting beam in 3D, as opposed to the experiments with cathode ray tubes in 2-dimensional television screens. Gas giant 'speaking' to us by radio waves bends the light in the tube, allowing us to see and hear the messages of Jupiter - God of light and sky.

  14. Determining Planck's Constant Using a Light-emitting Diode.

    ERIC Educational Resources Information Center

    Sievers, Dennis; Wilson, Alan

    1989-01-01

    Describes a method for making a simple, inexpensive apparatus which can be used to determine Planck's constant. Provides illustrations of a circuit diagram using one or more light-emitting diodes and a BASIC computer program for simplifying calculations. (RT)

  15. Dominant transverse-electric polarized emission from 298 nm MBE-grown AlN-delta-GaN quantum well ultraviolet light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Liu, Cheng; Ooi, Yu Kee; Islam, S. M.; Xing, Huili Grace; Jena, Debdeep; Zhang, Jing

    2017-02-01

    III-nitride based ultraviolet (UV) light emitting diodes (LEDs) are of considerable interest in replacing gas lasers and mercury lamps for numerous applications. Specifically, AlGaN quantum well (QW) based LEDs have been developed extensively but the external quantum efficiencies of which remain less than 10% for wavelengths <300 nm due to high dislocation density, difficult p-type doping and most importantly, the physics and band structure from the three degeneration valence subbands. One solution to address this issue at deep UV wavelengths is by the use of the AlGaN-delta-GaN QW where the insertion of the delta-GaN layer can ensure the dominant conduction band (C) - heavyhole (HH) transition, leading to large transverse-electric (TE) optical output. Here, we proposed and investigated the physics and polarization-dependent optical characterizations of AlN-delta- GaN QW UV LED at 300 nm. The LED structure is grown by Molecular Beam Epitaxy (MBE) where the delta-GaN layer is 3-4 monolayer (QW-like) sandwiched by 2.5-nm AlN sub-QW layers. The physics analysis shows that the use of AlN-delta-GaN QW ensures a larger separation between the top HH subband and lower-energy bands, and strongly localizes the electron and HH wave functions toward the QW center and hence resulting in 30-time enhancement in TEpolarized spontaneous emission rate, compared to that of a conventional Al0.35Ga0.65N QW. The polarization-dependent electroluminescence measurements confirm our theoretical analysis; a dominant TE-polarized emission was obtained at 298 nm with a minimum transverse-magnetic (TM) polarized emission, indicating the feasibility of high-efficiency TEpolarized UV emitters based on our proposed QW structure.

  16. New yellow Ba 0.93Eu 0.07Al 2O 4 phosphor for warm-white light-emitting diodes through single-emitting-center conversion

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Li, Xufan; Budai, John D.; Liu, Feng

    2013-01-01

    Phosphor-converted white light-emitting diodes for indoor illumination need to be warm-white (i.e., correlated color temperature <4000 K) with good color rendition (i.e., color rendering index >80). However, no single-phosphor, single-emitting-center-converted white light-emitting diodes can simultaneously satisfy the color temperature and rendition requirements due to the lack of sufficient red spectral component in the phosphors’ emission spectrum. Here, we report a new yellow Ba 0.93Eu 0.07Al 2O 4 phosphor that has a new orthorhombic lattice structure and exhibits a broad yellow photoluminescence band with sufficient red spectral component. Warm-white emissions with correlated color temperature <4000 K and color rendering index >80more » were readily achieved when combining the Ba 0.93Eu 0.07Al 2O 4 phosphor with a blue light-emitting diode (440–470 nm). This study demonstrates that warm-white light-emitting diodes with high color rendition (i.e., color rendering index >80) can be achieved based on single-phosphor, single-emitting-center conversion.« less

  17. Resonant-cavity light-emitting diodes for optical interconnects

    NASA Astrophysics Data System (ADS)

    Jin, Xu

    This dissertation addresses the issues related to external quantum efficiencies and light coupling efficiency of novel 1.3 mum Resonant-cavity light-emitting diodes (RCLEDs) on GaAs substrates. External quantum efficiency (QE) is defined as the number of extracted photons per injected electrons, i.e., the product of injection efficiency, internal QE, and light extraction efficiency. This study focuses on the latter two terms. Internal QE mainly depends on the properties of the active region quantum wells (QWs) used in the RCLEDs, such as composition, thickness, and strain compensation. GaAsSb/GaAs QW edge-emitting (EE) lasers are characterized experimentally to extract key parameters, such as internal QE and internal loss. With optimized QWs and a novel self-aligned EE lasers process, room temperature continuous wave (CW) operation of GaAsSb EE lasers has been demonstrated for the first time. The highest operational temperature for the EE lasers is 48°C at a wavelength as long as 1260 nm. This result is the best ever reported by a university group. In conventional LEDs, very little light generated by the active region, succeeds in escaping from the semiconductor material due to the small critical angle of total internal reflection. With the use of a resonant cavity, the light extraction efficiency of RCLEDs is significantly improved. Front and back reflectivities, detuning (offset) between resonant-cavity peak and electroluminescence, and electroluminescence linewidth have been identified as key factors influencing light extraction efficiency. Numerical simulations indicate that the fraction of luminescence transmitted through the top mirror of an optimized RCLED is around 9%, which is more than double that of conventional LEDs. This number will be larger when multiple reflections and photon recycling are considered; which are not included in the current model since they are structure dependent. The best GaAsSb/GaAs QW RCLEDs demonstrated in this work have shown

  18. Light-emitting nanolattices with enhanced brightness

    NASA Astrophysics Data System (ADS)

    Ng, Ryan C.; Mandal, Rajib; Anthony, Rebecca J.; Greer, Julia R.

    2017-02-01

    Three-dimensional (3D) photonic crystals have potential in solid state lighting applications due to their advantages over conventional planar thin film devices. Periodicity in a photonic crystal structure enables engineering of the density of states to improve spontaneous light emission according to Fermi's golden rule. Unlike planar thin films, which suffer significantly from total internal reflection, a 3D architectured structure is distributed in space with many non-flat interfaces, which facilitates a substantial enhancement in light extraction. We demonstrate the fabrication of 3D nano-architectures with octahedron geometry that utilize luminescing silicon nanocrystals as active media with an aluminum cathode and indium tin oxide anode towards the realization of a 3D light emitting device. The developed fabrication procedure allows charge to pass through the nanolattice between two contacts for electroluminescence. These initial fabrication efforts suggest that 3D nano-architected devices are realizable and can reach greater efficiencies than planar devices.

  19. The interaction of ultraviolet light with Arctic sea ice during SHEBA

    NASA Astrophysics Data System (ADS)

    Perovich, Donald K.

    The reflection, absorption and transmission of ultraviolet light by a sea-ice cover strongly impacts primary productivity, higher trophic components of the food web, and humans. Measurements of the incident irradiance at 305, 320, 340 and 380 nm and of the photosynthetically active radiation were made from April through September 1998 as part of the SHEBA (Surface Heat Budget of the Arctic Ocean program) field experiment in the Arctic Ocean. In addition, observations of snow depth and ice thickness were made at more than 100 sites encompassing a comprehensive range of conditions. The thickness observations were combined with a radiative transfer model to compute a time series of the ultraviolet light transmitted by the ice cover from April through September. Peak values of incident ultraviolet irradiance occurred in mid-June. Peak transmittance was later in the summer at the end of the melt season when the snow cover had completely melted, the ice had thinned and pond coverage was extensive. The fraction of the incident ultraviolet irradiance transmitted through the ice increased by several orders of magnitude as the melt season progressed. Ultraviolet transmittance was approximately a factor of ten greater for melt ponds than bare ice. Climate change has the potential to alter the amplitude and timing of the annual albedo cycle of sea ice. If the onset of melt occurs at increasingly earlier dates, ultraviolet transmittance will be significantly enhanced, with potentially deleterious biological impacts.

  20. Organic Light-Emitting Transistors: Materials, Device Configurations, and Operations.

    PubMed

    Zhang, Congcong; Chen, Penglei; Hu, Wenping

    2016-03-09

    Organic light-emitting transistors (OLETs) represent an emerging class of organic optoelectronic devices, wherein the electrical switching capability of organic field-effect transistors (OFETs) and the light-generation capability of organic light-emitting diodes (OLEDs) are inherently incorporated in a single device. In contrast to conventional OFETs and OLEDs, the planar device geometry and the versatile multifunctional nature of OLETs not only endow them with numerous technological opportunities in the frontier fields of highly integrated organic electronics, but also render them ideal scientific scaffolds to address the fundamental physical events of organic semiconductors and devices. This review article summarizes the recent advancements on OLETs in light of materials, device configurations, operation conditions, etc. Diverse state-of-the-art protocols, including bulk heterojunction, layered heterojunction and laterally arranged heterojunction structures, as well as asymmetric source-drain electrodes, and innovative dielectric layers, which have been developed for the construction of qualified OLETs and for shedding new and deep light on the working principles of OLETs, are highlighted by addressing representative paradigms. This review intends to provide readers with a deeper understanding of the design of future OLETs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  1. Light-extraction enhancement for light-emitting diodes: a firefly-inspired structure refined by the genetic algorithm

    NASA Astrophysics Data System (ADS)

    Bay, Annick; Mayer, Alexandre

    2014-09-01

    The efficiency of light-emitting diodes (LED) has increased significantly over the past few years, but the overall efficiency is still limited by total internal reflections due to the high dielectric-constant contrast between the incident and emergent media. The bioluminescent organ of fireflies gave incentive for light-extraction enhance-ment studies. A specific factory-roof shaped structure was shown, by means of light-propagation simulations and measurements, to enhance light extraction significantly. In order to achieve a similar effect for light-emitting diodes, the structure needs to be adapted to the specific set-up of LEDs. In this context simulations were carried out to determine the best geometrical parameters. In the present work, the search for a geometry that maximizes the extraction of light has been conducted by using a genetic algorithm. The idealized structure considered previously was generalized to a broader variety of shapes. The genetic algorithm makes it possible to search simultaneously over a wider range of parameters. It is also significantly less time-consuming than the previous approach that was based on a systematic scan on parameters. The results of the genetic algorithm show that (1) the calculations can be performed in a smaller amount of time and (2) the light extraction can be enhanced even more significantly by using optimal parameters determined by the genetic algorithm for the generalized structure. The combination of the genetic algorithm with the Rigorous Coupled Waves Analysis method constitutes a strong simulation tool, which provides us with adapted designs for enhancing light extraction from light-emitting diodes.

  2. AlN/ITO-Based Hybrid Electrodes with Conducting Filaments: Their Application to Ultraviolet Light-Emitting Diodes.

    PubMed

    Kim, Kyeong Heon; Lee, Tae Ho; Kim, Tae Geun

    2017-07-19

    A hybrid-type transparent conductive electrode (H-TCE) structure comprising an AlN rod array with conducting filaments (CFs) and indium tin oxide (ITO) films is proposed to improve both current injection and distribution as well as optical transmittance in the UV region. These CFs, generated in UV-transparent AlN rod areas using an electric field, can be used as conducting paths for carrier injection from a metal to a semiconductor such as p-(Al)GaN, which allows perfect Ohmic behavior with high transmittance (>95% at 365 nm) to be obtained. In addition, conduction across AlN rods and Ohmic conduction mechanisms are investigated by analyzing AlN rods and AlN rod/p-AlGaN film interfaces. We apply these H-TCEs to three near-UV light-emitting diodes (LEDs) (385 nm LEDs with p-GaN and p-AlGaN terminated surfaces and 365 nm LED with p-AlGaN terminated surface). We confirm that the light power outputs increase by 66%, 79%, and 103%, whereas the forward voltages reduce by 5.6%, 10.2%, and 8.6% for 385 nm p-GaN terminated, 385 nm p-AlGaN terminated, and 365 nm p-AlGaN terminated LEDs with H-TCEs, respectively, compared to LEDs with reference ITOs.

  3. Ultraviolet Extensions

    NASA Technical Reports Server (NTRS)

    2008-01-01

    [figure removed for brevity, see original site] Side-by-Side Comparison Click on image for larger view

    This ultraviolet image from NASA's Galaxy Evolution Explorer shows the Southern Pinwheel galaxy, also know as Messier 83 or M83. It is located 15 million light-years away in the southern constellation Hydra.

    Ultraviolet light traces young populations of stars; in this image, young stars can be seen way beyond the main spiral disk of M83 up to 140,000 light-years from its center. Could life exist around one of these far-flung stars? Scientists say it's unlikely because the outlying regions of a galaxy are lacking in the metals required for planets to form.

    The image was taken at scheduled intervals between March 15 and May 20, 2007. It is one of the longest-exposure, or deepest, images ever taken of a nearby galaxy in ultraviolet light. Near-ultraviolet light (or longer-wavelength ultraviolet light) is colored yellow, and far-ultraviolet light is blue.

    What Lies Beyond the Edge of a Galaxy The side-by-side comparison shows the Southern Pinwheel galaxy, or M83, as seen in ultraviolet light (right) and at both ultraviolet and radio wavelengths (left). While the radio data highlight the galaxy's long, octopus-like arms stretching far beyond its main spiral disk (red), the ultraviolet data reveal clusters of baby stars (blue) within the extended arms.

    The ultraviolet image was taken by NASA's Galaxy Evolution Explorer between March 15 and May 20, 2007, at scheduled intervals. Back in 2005, the telescope first photographed M83 over a shorter period of time. That picture was the first to reveal far-flung baby stars forming up to 63,000 light-years from the edge of the main spiral disk. This came as a surprise to astronomers because a galaxy's outer territory typically lacks high densities of star-forming materials.

    The newest picture of M83 from the Galaxy Evolution Explorer is shown at the right, and was taken over a longer period of

  4. Organic light emitting device structure for obtaining chromaticity stability

    DOEpatents

    Tung, Yeh-Jiun [Princeton, NJ; Ngo, Tan [Levittown, PA

    2007-05-01

    The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

  5. Organic light emitting device structures for obtaining chromaticity stability

    DOEpatents

    Tung, Yeh-Jiun; Lu, Michael; Kwong, Raymond C.

    2005-04-26

    The present invention relates to organic light emitting devices (OLEDs). The devices of the present invention are efficient white or multicolored phosphorescent OLEDs which have a high color stability over a wide range of luminances. The devices of the present invention comprise an emissive region having at least two emissive layers, with each emissive layer comprising a different host and emissive dopant, wherein at least one of the emissive dopants emits by phosphorescence.

  6. The efficiency of light-emitting diode suction traps for the collection of South African livestock-associated Culicoides species.

    PubMed

    Venter, G J; Boikanyo, S N B; De Beer, C J

    2018-06-28

    Culicoides biting midges (Diptera: Ceratopogonidae) are vectors of a range of orbiviruses that cause important veterinary diseases such as bluetongue and African horse sickness. The effective monitoring of Culicoides species diversity and abundance, both at livestock and near potential wildlife hosts, is essential for risk management. The Onderstepoort 220-V ultraviolet (UV) light trap is extensively used for this purpose. Reducing its power requirements by fitting low-energy light-emitting diodes (LEDs) can lead to greater flexibility in monitoring. A comparison of the efficiency of the 220-V Onderstepoort trap (8-W fluorescent UV light) with the efficiency of the 220-V or 12-V Onderstepoort traps fitted with red, white, blue or green LEDs or a 12-V fluorescent Onderstepoort trap demonstrated the 220-V Onderstepoort trap to be the most efficient. All the results showed nulliparous Culicoides imicola Kieffer females to be the dominant grouping. Despite the lower numbers collected, 12-V traps can be used in field situations to determine the most abundant species. © 2018 The Royal Entomological Society.

  7. Coupling Light Emitting Diodes with Photocatalyst-Coated Optical Fibers Improves Quantum Yield of Pollutant Oxidation.

    PubMed

    Ling, Li; Tugaoen, Heather; Brame, Jonathon; Sinha, Shahnawaz; Li, Chuanhao; Schoepf, Jared; Hristovski, Kiril; Kim, Jae-Hong; Shang, Chii; Westerhoff, Paul

    2017-11-21

    A photocatalyst-coated optical fiber was coupled with a 318 nm ultraviolet-A light emitting diode, which activated the photocatalysts by interfacial photon-electron excitation while minimizing photonic energy losses due to conventional photocatalytic barriers. The light delivery mechanism was explored via modeling of evanescent wave energy produced upon total internal reflection and photon refraction into the TiO 2 surface coating. This work explores aqueous phase LED-irradiated optical fibers for treating organic pollutants and for the first time proposes a dual-mechanistic approach to light delivery and photocatalytic performance. Degradation of a probe organic pollutant was evaluated as a function of optical fiber coating thickness, fiber length, and photocatalyst attachment method and compared against the performance of an equivalent catalyst mass in a completely mixed slurry reactor. Measured and simulated photon fluence through the optical fibers decreased as a function of fiber length, coating thickness, or TiO 2 mass externally coated on the fiber. Thinner TiO 2 coatings achieved faster pollutant removal rates from solution, and dip coating performed better than sol-gel attachment methods. TiO 2 attached to optical fibers achieved a 5-fold higher quantum yield compared against an equivalent mass of TiO 2 suspended in a slurry solution.

  8. Organic light-emitting diodes from homoleptic square planar complexes

    DOEpatents

    Omary, Mohammad A

    2013-11-12

    Homoleptic square planar complexes [M(N.LAMBDA.N).sub.2], wherein two identical N.LAMBDA.N bidentate anionic ligands are coordinated to the M(II) metal center, including bidentate square planar complexes of triazolates, possess optical and electrical properties that make them useful for a wide variety of optical and electrical devices and applications. In particular, the complexes are useful for obtaining white or monochromatic organic light-emitting diodes ("OLEDs"). Improved white organic light emitting diode ("WOLED") designs have improved efficacy and/or color stability at high brightness in single- or two-emitter white or monochrome OLEDs that utilize homoleptic square planar complexes, including bis[3,5-bis(2-pyridyl)-1,2,4-triazolato]platinum(II) ("Pt(ptp).sub.2").

  9. Recipient luminophoric mediums having narrow spectrum luminescent materials and related semiconductor light emitting devices and methods

    DOEpatents

    LeToquin, Ronan P; Tong, Tao; Glass, Robert C

    2014-12-30

    Light emitting devices include a light emitting diode ("LED") and a recipient luminophoric medium that is configured to down-convert at least some of the light emitted by the LED. In some embodiments, the recipient luminophoric medium includes a first broad-spectrum luminescent material and a narrow-spectrum luminescent material. The broad-spectrum luminescent material may down-convert radiation emitted by the LED to radiation having a peak wavelength in the red color range. The narrow-spectrum luminescent material may also down-convert radiation emitted by the LED into the cyan, green or red color range.

  10. STUDIES ON BIOLUMINESCENCE : XVII. FLUORESCENCE AND INHIBITION OF LUMINESCENCE IN CTENOPHORES BY ULTRA-VIOLET LIGHT.

    PubMed

    Harvey, E N

    1925-01-20

    1. Small dumps of the luminous cells of Mnemiopsis cannot readily be stimulated mechanically but will luminesce on treatment with saponin solution. Larger groups of luminous cells (such as are connected with two paddle plates) luminesce on mechanical stimulation. This suggests that mechanical stimulation to luminesce occurs chiefly through a nerve mechanism which has been broken up in the small dumps of luminous tissue. 2. The smallest bits of luminous tissue, even cells freed from the animal by agitation, that will pass through filter paper, lose their power to luminesce in daylight and regain it (at least partially) in the dark. 3. Luminescence of the whole animal and of individual cells is suppressed by near ultra-violet light (without visible light). 4. Inhibition in ultra-violet light is not due to stimulation (by the ultra-violet light) of the animal to luminesce, thereby using up the store of photogenic material. 5. Animals stimulated mechanically several times and placed in ultra-violet light show a luminescence along the meridians in the same positions as the luminescence that appears on stimulation. This luminescence in the ultra-violet or "tonic luminescence," is not obtained with light adapted ctenophores and is interpreted to be a fluorescence of the product of oxidation of the photogenic material. 6. Marked fluorescence of the luminous organ of the glowworm (Photuris) and of the luminous slime of Chatopterus may be observed in ultra-violet but no marked fluorescence of the luminous substances of Cypridina is apparent. 7. Evidence is accumulating to show a close relation between fluorescent and chemiluminescent substances in animals, similar to that described for unsaturated silicon compounds and the Grignard reagents.

  11. Light-Emitting Diode (LED) Traps Improve the Light-Trapping of Anopheline Mosquitoes.

    PubMed

    Costa-Neta, B M; da Silva, A A; Brito, J M; Moraes, J L P; Rebêlo, J M M; Silva, F S

    2017-11-07

    Numerous advantages over the standard incandescent lamp favor the use of light-emitting diodes (LEDs) as an alternative and inexpensive light source for sampling medically important insects in surveillance studies. Previously published studies examined the response of mosquitoes to different wavelengths, but data on anopheline mosquito LED attraction are limited. Center for Disease Control and Prevention-type light traps were modified by replacing the standard incandescent lamp with 5-mm LEDs, one emitting at 520 nm (green) and the other at 470 nm (blue). To test the influence of moon luminosity on LED catches, the experiments were conducted during the four lunar phases during each month of the study period. A total of 1,845 specimens representing eight anopheline species were collected. Anopheles (Nyssorhynchus) evansae (35.2%) was the most frequently collected, followed by An. (Nys.) triannulatus (21.9%), An. (Nys.) goeldii (12.9%), and An. (Nys.) argyritarsis (11.5%). The green LED was the most attractive light source, accounting for 43.3% of the individuals collected, followed by the blue (31.8%) and control (24.9%) lights. The LED traps were significantly more attractive than the control, independent of the lunar phase. Light trapping of anopheline mosquitoes was more efficient when the standard incandescent lamp was replaced with LEDs, regardless of the moon phase. The efficiency of LEDs improves light trapping results, and it is suggested that the use of LEDs as an attractant for anopheline mosquitoes should be taken into consideration when sampling anopheline mosquitoes. © The Authors 2017. Published by Oxford University Press on behalf of Entomological Society of America. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

  12. Ultraviolet-C light effect on physicochemical, bioactive, microbiological, and sensorial characteristics of carrot (Daucus carota) beverages.

    PubMed

    Hernández-Carranza, Paola; Ruiz-López, Irving Israel; Pacheco-Aguirre, Francisco Manuel; Guerrero-Beltrán, José Ángel; Ávila-Sosa, Raúl; Ochoa-Velasco, Carlos Enrique

    2016-09-01

    The aim of this research was to evaluate the effect of ultraviolet-C light on physicochemical, bioactive, microbial, and sensory characteristics of carrot beverages. Beverages were formulated with different concentrations of carrot juice (60, 80, and 100% [v/v]) and treated with ultraviolet-C light at different flow rates (0, 0.5, 3.9, and 7.9 mL s(-1)) and times (5, 10, 15, 20, and 30 min), equivalent to ultraviolet-C dosages of 13.2, 26.4, 39.6, 52.8, and 79.2 J cm(-2) Total soluble solids, pH, and titratable acidity were not affected by the ultraviolet-C light treatment. Ultraviolet-C light significantly affected (p < 0.05) color parameters of pure juice; however, at low concentration of juice, total color change was slightly affected (ΔE = 2.0 ± 0.7). Phenolic compounds (4.1 ± 0.1, 5.2 ± 0.2, and 8.6 ± 0.3 mg of GAE 100 mL(-1) of beverage with 60, 80, and 100% of juice, respectively) and antioxidant capacity (6.1 ± 0.4, 8.5 ± 0.4, and 9.4 ± 0.3 mg of Trolox 100 mL(-1) of beverage with 60, 80, and 100% of juice, respectively) of carrot beverages were not affected by ultraviolet-C light treatment. Microbial kinetics showed that mesophiles were mostly reduced at high flow rates in carrot beverages with 60% of juice. Maximum logarithmic reductions for mesophiles and total coliforms were 3.2 ± 0.1 and 2.6 ± 0.1, respectively, after 30 min of ultraviolet-C light processing. Beverages were well accepted (6-7) by judges who did not perceive the difference between untreated and Ultraviolet-C light treated beverages. © The Author(s) 2016.

  13. Impact of Ultraviolet Light on Vitiligo.

    PubMed

    Singh, Rasnik K

    2017-01-01

    Vitiligo is a disorder of the melanocytes that results in a dynamic spectrum of skin depigmentation. Its etiology is complex and multifactorial, with data supporting several different hypotheses. Given its prominent phenotype, vitiligo has a significant negative impact on quality of life. Coupled with the chronic and incurable nature of the disease, this presents a formidable treatment challenge. Several treatment modalities have been instituted over the years, with varying efficacy. This chapter focuses on the use of ultraviolet light in vitiligo as an established therapeutic option.

  14. A dual-emitting core-shell carbon dot-silica-phosphor composite for white light emission

    NASA Astrophysics Data System (ADS)

    Chen, Yonghao; Lei, Bingfu; Zheng, Mingtao; Zhang, Haoran; Zhuang, Jianle; Liu, Yingliang

    2015-11-01

    A unique dual-emitting core-shell carbon dot-silica-phosphor (CDSP) was constructed from carbon dots (CDs), tetraethoxysilane (TEOS) and Sr2Si5N8:Eu2+ phosphor through a one-pot sol-gel method. Blue emitting CDs uniformly disperse in the silica layer covering the orange emitting phosphor via a polymerization process, which makes CDSP achieve even white light emission. Tunable photoluminescence of CDSP is observed and the preferable white light emission is achieved through changing the excitation wavelength or controlling the mass ratio of the phosphor. When CDSP powders with a phosphor rate of 3.9% and 5.1% are excited at a wavelength of 400 nm, preferable white light emission is observed, with Commission Internationale de l'Eclairage (CIE) coordinates of (0.32, 0.32) and (0.34, 0.32), respectively. Furthermore, CDSP can mix well with epoxy resin to emit strong and even white light, and based on this, a CDSP-based white LED with a high colour rendering index (CRI) of 94 was fabricated.A unique dual-emitting core-shell carbon dot-silica-phosphor (CDSP) was constructed from carbon dots (CDs), tetraethoxysilane (TEOS) and Sr2Si5N8:Eu2+ phosphor through a one-pot sol-gel method. Blue emitting CDs uniformly disperse in the silica layer covering the orange emitting phosphor via a polymerization process, which makes CDSP achieve even white light emission. Tunable photoluminescence of CDSP is observed and the preferable white light emission is achieved through changing the excitation wavelength or controlling the mass ratio of the phosphor. When CDSP powders with a phosphor rate of 3.9% and 5.1% are excited at a wavelength of 400 nm, preferable white light emission is observed, with Commission Internationale de l'Eclairage (CIE) coordinates of (0.32, 0.32) and (0.34, 0.32), respectively. Furthermore, CDSP can mix well with epoxy resin to emit strong and even white light, and based on this, a CDSP-based white LED with a high colour rendering index (CRI) of 94 was fabricated

  15. Efficient and Stable CsPb(Br/I)3@Anthracene Composites for White Light-Emitting Devices.

    PubMed

    Shen, Xinyu; Sun, Chun; Bai, Xue; Zhang, Xiaoyu; Wang, Yu; Wang, Yiding; Song, Hongwei; Yu, William W

    2018-05-16

    Inorganic perovskite quantum dots bear many unique properties that make them potential candidates for optoelectronic applications, including color display and lighting. However, the white emission with inorganic perovskite quantum dots has rarely been realized due to the anion-exchange reaction. Here, we proposed a one-pot preparation to fabricate inorganic perovskite quantum dot-based white light-emitting composites by introducing anthracene as a blue emission component. The as-prepared white light-emitting composite exhibited a photoluminescence quantum yield of 41.9%. By combining CsPb(Br/I) 3 @anthracene composites with UV light-emitting device (LED) chips, white light-emitting devices with a color rendering index of 90 were realized with tunable color temperature from warm white to cool white. These results can promote the application of inorganic perovskite quantum dots in the field of white LEDs.

  16. Optimization of light quality from color mixing light-emitting diode systems for general lighting

    NASA Astrophysics Data System (ADS)

    Thorseth, Anders

    2012-03-01

    Given the problem of metamerisms inherent in color mixing in light-emitting diode (LED) systems with more than three distinct colors, a method for optimizing the spectral output of multicolor LED system with regards to standardized light quality parameters has been developed. The composite spectral power distribution from the LEDs are simulated using spectral radiometric measurements of single commercially available LEDs for varying input power, to account for the efficiency droop and other non-linear effects in electrical power vs. light output. The method uses electrical input powers as input parameters in a randomized steepest decent optimization. The resulting spectral power distributions are evaluated with regard to the light quality using the standard characteristics: CIE color rendering index, correlated color temperature and chromaticity distance. The results indicate Pareto optimal boundaries for each system, mapping the capabilities of the simulated lighting systems with regard to the light quality characteristics.

  17. Nanoparticle embedded p-type electrodes for GaN-based flip-chip light emitting diodes.

    PubMed

    Kwak, Joon Seop; Song, J O; Seong, T Y; Kim, B I; Cho, J; Sone, C; Park, Y

    2006-11-01

    We have investigated high-quality ohmic contacts for flip-chip light emitting diodes using Zn-Ni nanoparticles/Ag schemes. The Zn-Ni nanoparticles/Ag contacts produce specific contact resistances of 10(-5)-10(-6) omegacm2 when annealed at temperatures of 330-530 degrees C for 1 min in air ambient, which are much better than those obtained from the Ag contacts. It is shown that blue InGaN/GaN multi-quantum well light emitting diodes fabricated with the annealed Zn-Ni nanoparticles/Ag contacts give much lower forward-bias voltages at 20 mA compared with those of the multi-quantum well light emitting diodes made with the as-deposited Ag contacts. It is further presented that the multi-quantum well light emitting diodes made with the Zn-Ni nanoparticles/Ag contacts show similar output power compared to those fabricated with the Ag contact layers.

  18. Flexible bottom-emitting white organic light-emitting diodes with semitransparent Ni/Ag/Ni anode.

    PubMed

    Koo, Ja-Ryong; Lee, Seok Jae; Lee, Ho Won; Lee, Dong Hyung; Yang, Hyung Jin; Kim, Woo Young; Kim, Young Kwan

    2013-05-06

    We fabricated a flexible bottom-emitting white organic light-emitting diode (BEWOLED) with a structure of PET/Ni/Ag/Ni (3/6/3 nm)/ NPB (50 nm)/mCP (10 nm)/7% FIrpic:mCP (10 nm)/3% Ir(pq)(2) acac:TPBi (5 nm)/7% FIrpic:TPBi (5 nm)/TPBi (10 nm)/Liq (2 nm)/ Al (100 nm). To improve the performance of the BEWOLED, a multilayered metal stack anode of Ni/Ag/Ni treated with oxygen plasma for 60 sec was introduced into the OLED devices. The Ni/Ag/Ni anode effectively enhanced the probability of hole-electron recombination due to an efficient hole injection into and charge balance in an emitting layer. By comparing with a reference WOLED using ITO on glass, it is verified that the flexible BEWOLED showed a similar or better electroluminescence (EL) performance.

  19. Photoluminescence Analysis of White-Light-Emitting Si Nanoparticles Using Effective Mass Approximation Method

    NASA Astrophysics Data System (ADS)

    Lee, Soojin; Cho, Woon Jo; Kim, Yang Do; Kim, Eun Kyu; Park, Jae Gwan

    2005-07-01

    White-light-emitting Si nanoparticles were prepared from the sodium silicide (NaSi) precursor. The photoluminescence of colloidal Si nanoparticles has been fitted by effective mass approximation (EMA). We analyzed the correlation between experimental photoluminescence and simulated fitting curves. Both the mean diameter and the size dispersion of the white-light-emitting Si nanoparticles were estimated.

  20. Bright infrared quantum-dot light-emitting diodes through inter-dot spacing control.

    PubMed

    Sun, Liangfeng; Choi, Joshua J; Stachnik, David; Bartnik, Adam C; Hyun, Byung-Ryool; Malliaras, George G; Hanrath, Tobias; Wise, Frank W

    2012-05-06

    Infrared light-emitting diodes are currently fabricated from direct-gap semiconductors using epitaxy, which makes them expensive and difficult to integrate with other materials. Light-emitting diodes based on colloidal semiconductor quantum dots, on the other hand, can be solution-processed at low cost, and can be directly integrated with silicon. However, so far, exciton dissociation and recombination have not been well controlled in these devices, and this has limited their performance. Here, by tuning the distance between adjacent PbS quantum dots, we fabricate thin-film quantum-dot light-emitting diodes that operate at infrared wavelengths with radiances (6.4 W sr(-1) m(-2)) eight times higher and external quantum efficiencies (2.0%) two times higher than the highest values previously reported. The distance between adjacent dots is tuned over a range of 1.3 nm by varying the lengths of the linker molecules from three to eight CH(2) groups, which allows us to achieve the optimum balance between charge injection and radiative exciton recombination. The electroluminescent powers of the best devices are comparable to those produced by commercial InGaAsP light-emitting diodes. By varying the size of the quantum dots, we can tune the emission wavelengths between 800 and 1,850 nm.

  1. Blue laser diode (LD) and light emitting diode (LED) applications

    NASA Astrophysics Data System (ADS)

    Bergh, Arpad A.

    2004-09-01

    The family of blue LEDs, edge emitting and surface emitting lasers, enable a number of applications. Blue lasers are used in digital applications such as optical storage in high density DVDs. The resolution of the spot size and hence the storage density is diffraction limited and is inversely proportional to the square of the wavelength of the laser. Other applications include printing, optical scanners, and high-resolution photo-lithography.As light emitters, blue LEDs are used for signaling and in direct view large area emissive displays. They are also making inroads into signage and LCD back-lighting, mobile platforms, and decorative accent lighting in curtains, furniture, etc.Blue LEDs produce white light either with phosphor wavelength converters or in combination with red and green LEDs. The full potential of LED light sources will require three devices to enable complete control over color and intensity.Sensing and medical/bio applications have a major impact on home security, on monitoring the environment, and on health care. New emerging diagnostic and therapeutic applications will improve the quality and reduce the cost of health care.

  2. High efficiency and brightness fluorescent organic light emitting diode by triplet-triplet fusion

    DOEpatents

    Forrest, Stephen; Zhang, Yifan

    2015-02-10

    A first device is provided. The first device further comprises an organic light emitting device. The organic light emitting device further comprises an anode, a cathode, and an emissive layer disposed between the anode and the cathode. The emissive layer may include an organic host compound and at least one organic emitting compound capable of fluorescent emission at room temperature. Various configurations are described for providing a range of current densities in which T-T fusion dominates over S-T annihilation, leading to very high efficiency fluorescent OLEDs.

  3. Metal-halide perovskites for photovoltaic and light-emitting devices.

    PubMed

    Stranks, Samuel D; Snaith, Henry J

    2015-05-01

    Metal-halide perovskites are crystalline materials originally developed out of scientific curiosity. Unexpectedly, solar cells incorporating these perovskites are rapidly emerging as serious contenders to rival the leading photovoltaic technologies. Power conversion efficiencies have jumped from 3% to over 20% in just four years of academic research. Here, we review the rapid progress in perovskite solar cells, as well as their promising use in light-emitting devices. In particular, we describe the broad tunability and fabrication methods of these materials, the current understanding of the operation of state-of-the-art solar cells and we highlight the properties that have delivered light-emitting diodes and lasers. We discuss key thermal and operational stability challenges facing perovskites, and give an outlook of future research avenues that might bring perovskite technology to commercialization.

  4. Bipolar Electrode Array Embedded in a Polymer Light-Emitting Electrochemical Cell.

    PubMed

    Gao, Jun; Chen, Shulun; AlTal, Faleh; Hu, Shiyu; Bouffier, Laurent; Wantz, Guillaume

    2017-09-20

    A linear array of aluminum discs is deposited between the driving electrodes of an extremely large planar polymer light-emitting electrochemical cell (PLEC). The planar PLEC is then operated at a constant bias voltage of 100 V. This promotes in situ electrochemical doping of the luminescent polymer from both the driving electrodes and the aluminum discs. These aluminum discs function as discrete bipolar electrodes (BPEs) that can drive redox reactions at their extremities. Time-lapse fluorescence imaging reveals that p- and n-doping that originated from neighboring BPEs can interact to form multiple light-emitting p-n junctions in series. This provides direct evidence of the working principle of bulk homojunction PLECs. The propagation of p-doping is faster from the BPEs than from the positive driving electrode due to electric field enhancement at the extremities of BPEs. The effect of field enhancement and the fact that the doping fronts only need to travel the distance between the neighboring BPEs to form a light-emitting junction greatly reduce the response time for electroluminescence in the region containing the BPE array. The near simultaneous formation of multiple light-emitting p-n junctions in series causes a measurable increase in cell current. This indicates that the region containing a BPE is much more conductive than the rest of the planar cell despite the latter's greater width. The p- and n-doping originating from the BPEs is initially highly confined. Significant expansion and divergence of doping occurred when the region containing the BPE array became more conductive. The shape and direction of expanded doping strongly suggest that the multiple light-emitting p-n junctions, formed between and connected by the array of metal BPEs, have functioned as a single rod-shaped BPE. This represents a new type of BPE that is formed in situ and as a combination of metal, doped polymers, and forward-biased p-n junctions connected in series.

  5. High-performance light-emitting diodes based on carbene-metal-amides

    NASA Astrophysics Data System (ADS)

    Di, Dawei; Romanov, Alexander S.; Yang, Le; Richter, Johannes M.; Rivett, Jasmine P. H.; Jones, Saul; Thomas, Tudor H.; Abdi Jalebi, Mojtaba; Friend, Richard H.; Linnolahti, Mikko; Bochmann, Manfred; Credgington, Dan

    2017-04-01

    Organic light-emitting diodes (OLEDs) promise highly efficient lighting and display technologies. We introduce a new class of linear donor-bridge-acceptor light-emitting molecules, which enable solution-processed OLEDs with near-100% internal quantum efficiency at high brightness. Key to this performance is their rapid and efficient utilization of triplet states. Using time-resolved spectroscopy, we establish that luminescence via triplets occurs within 350 nanoseconds at ambient temperature, after reverse intersystem crossing to singlets. We find that molecular geometries exist at which the singlet-triplet energy gap (exchange energy) is close to zero, so that rapid interconversion is possible. Calculations indicate that exchange energy is tuned by relative rotation of the donor and acceptor moieties about the bridge. Unlike other systems with low exchange energy, substantial oscillator strength is sustained at the singlet-triplet degeneracy point.

  6. Fabrication of white light-emitting diodes based on UV light-emitting diodes with conjugated polymers-(CdSe/ZnS) quantum dots as hybrid phosphors.

    PubMed

    Jung, Hyunchul; Chung, Wonkeun; Lee, Chang Hun; Kim, Sung Hyun

    2012-07-01

    White light-emitting diodes (LEDs) were fabricated using GaN-based 380-nm UV LEDs precoated with the composite of blue-emitting polymer (poly[(9,9-dihexylfluorenyl-2,7-diyl)-alt-co-(2-methoxy-5-{2-ethylhexyloxy)-1 ,4-phenylene)]), yellow green-emitting polymer (poly[(9,9-dioctylfluorenyl-2,7-diyl)-co-(1,4-benzo-{2,1',3}-thiadiazole)]), and 605-nm red-emitting quantum dots (QDs). CdSe cores were obtained by solvothermal route using CdO, Se precursors and ZnS shells were synthesized by using diethylzinc, and hexamethyldisilathiane precursors. The optical properties of CdSe/ZnS QDs were characterized by UV-visible and photoluminescence (PL) spectra. The structural data and composition of the QDs were transmission electron microscopy (TEM), and EDX technique. The quantum yield and size of the QDs were 58.7% and about 6.7 nm, respectively. Three-band white light was generated by hybridizing blue (430 nm), green (535 nm), and red (605 nm) emission. The color-rendering index (CRI) of the device was extremely improved by introducing the QDs. The CIE-1931 chromaticity coordinate, color temperature, and CRI of a white LED at 20 mA were (0.379, 0.368), 3969 K, and 90, respectively.

  7. High-Fluence Light-Emitting Diode-Generated Red Light Modulates the Transforming Growth Factor-Beta Pathway in Human Skin Fibroblasts.

    PubMed

    Mamalis, Andrew; Jagdeo, Jared

    2018-05-24

    Skin fibrosis is a significant medical problem with limited available treatment modalities. The key cellular characteristics include increased fibroblast proliferation, collagen production, and transforming growth factor-beta (TGF-B)/SMAD pathway signaling. The authors have previously shown that high-fluence light-emitting diode red light (HF-LED-RL) decreases cellular proliferation and collagen production. Herein, the authors investigate the ability of HF-LED-RL to modulate the TGF-B/SMAD pathway. Normal human dermal fibroblasts were cultured and irradiated with a commercially available hand-held LED array. After irradiation, cell lysates were collected and levels of pSMAD2, TGF-Beta 1, and TGF-Beta I receptor were measured using Western blot. High-fluence light-emitting diode red light decreased TGF-Beta 1 ligand (TGF-B1) levels after irradiation. 320 J/cm HF-LED-RL resulted in 59% TGF-B1 and 640 J/cm HF-LED-RL resulted in 54% TGF-B1, relative to controls. 640 J/cm HF-LED-RL resulted in 62% pSMAD2 0 hours after irradiation, 65% pSMAD2 2 hours after irradiation, and 95% 4 hours after irradiation, compared with matched controls. High-fluence light-emitting diode red light resulted in no significant difference in transforming growth factor-beta receptor I levels compared with matched controls. Skin fibrosis is a significant medical problem with limited available treatment modalities. Light-emitting diode-generated red light is a safe, economic, and noninvasive modality that has a body of in vitro evidence supporting the reduction of key cellular characteristics associated with skin fibrosis.

  8. UV emissions from low energy artificial light sources.

    PubMed

    Fenton, Leona; Moseley, Harry

    2014-01-01

    Energy efficient light sources have been introduced across Europe and many other countries world wide. The most common of these is the Compact Fluorescent Lamp (CFL), which has been shown to emit ultraviolet (UV) radiation. Light Emitting Diodes (LEDs) are an alternative technology that has minimal UV emissions. This brief review summarises the different energy efficient light sources available on the market and compares the UV levels and the subsequent effects on the skin of normal individuals and those who suffer from photodermatoses. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.

  9. Doehlert experimental design applied to optimization of light emitting textile structures

    NASA Astrophysics Data System (ADS)

    Oguz, Yesim; Cochrane, Cedric; Koncar, Vladan; Mordon, Serge R.

    2016-07-01

    A light emitting fabric (LEF) has been developed for photodynamic therapy (PDT) for the treatment of dermatologic diseases such as Actinic Keratosis (AK). A successful PDT requires homogenous and reproducible light with controlled power and wavelength on the treated skin area. Due to the shape of the human body, traditional PDT with external light sources is unable to deliver homogenous light everywhere on the skin (head vertex, hand, etc.). For better light delivery homogeneity, plastic optical fibers (POFs) have been woven in textile in order to emit laterally the injected light. The previous studies confirmed that the light power could be locally controlled by modifying the radius of POF macro-bendings within the textile structure. The objective of this study is to optimize the distribution of macro-bendings over the LEF surface in order to increase the light intensity (mW/cm2), and to guarantee the best possible light deliver homogeneity over the LEF which are often contradictory. Fifteen experiments have been carried out with Doehlert experimental design involving Response Surface Methodology (RSM). The proposed models are fitted to the experimental data to enable the optimal set up of the warp yarns tensions.

  10. Electrical and optical properties of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) and AuCl3-doped reduced graphene oxide/single-walled carbon nanotube films for ultraviolet light-emitting diodes.

    PubMed

    Lee, Byeong Ryong; Lee, Jae Hoon; Kim, Kyeong Heon; Kim, Hee-Dong; Kim, Tae Geun

    2014-12-01

    We report the effects of poly(3,4-ethylenedioxythiophene) oxidized with poly(4-styrenesulfonate) ( PSS) and gold chloride (AuCl) co-doping on the electrical and optical properties of reduced graphene oxide (RGO)/single-walled carbon nanotube (SWNT) films fabricated by dipcoating methods. The RGO/SWNT films were doped with both AuCl3 dissolved in nitromethane and PSS hole injection layers by spin coating to improve their electrical properties by increasing the work function of the RGO/SWNT films, thereby reducing the Schottky barrier height between the RGO/SWNT and p-GaN films. As a result, we obtained a reduced sheet resistance of 851.9 Ω/Ω and a contact resistance of 1.97 x 10(-1) Ω x cm2, together with a high transmittance of 84.1% at 380 nm. The contact resistance of these films should be further reduced to fully utilize the feature of the electrode scheme proposed in this work, but the current result suggests its potential use as a transparent conductive electrode for ultraviolet light-emitting diodes.

  11. A white organic light emitting diode based on anthracene-triphenylamine derivatives

    NASA Astrophysics Data System (ADS)

    Jiang, Quan; Qu, Jianjun; Yu, Junsheng; Tao, Silu; Gan, Yuanyuan; Jiang, Yadong

    2010-10-01

    White organic lighting-diode (WOLED) can be used as flat light sources, backlights for liquid crystal displays and full color displays. Recently, a research mainstream of white OLED is to develop the novel materials and optimize the structure of devices. In this work a WOLED with a structure of ITO/NPB/PAA/Alq3: x% rubrene/Alq3/Mg: Ag, was fabricated. The device has two light-emitting layers. NPB is used as a hole transport layer, PAA as a blue emitting layer, Alq3: rubrene host-guest system as a yellow emitting layer, and Alq3 close to the cathode as an electron transport layer. In the experiment, the doping concentration of rubrene was optimized. WOLED 1 with 4% rubrene achieved a maximum luminous efficiency of 1.80 lm/W, a maximum luminance of 3926 cd/m2 and CIE coordinates of (0.374, 0.341) .WOLED 2 with 2% rubrene achieved a maximum luminous efficiency of 0.65 lm/W, a maximum luminance of 7495cd/m2 and CIE coordinates of (0.365,0.365).

  12. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties.

    PubMed

    Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj; Deferme, Wim

    2018-02-13

    To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10-20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables.

  13. Finding the Average Speed of a Light-Emitting Toy Car with a Smartphone Light Sensor

    ERIC Educational Resources Information Center

    Kapucu, Serkan

    2017-01-01

    This study aims to demonstrate how the average speed of a light-emitting toy car may be determined using a smartphone's light sensor. The freely available Android smartphone application, "AndroSensor," was used for the experiment. The classroom experiment combines complementary physics knowledge of optics and kinematics to find the…

  14. Effect of some ultraviolet light absorbers on photo-stabilization of azadirachtin-A.

    PubMed

    Deota, P T; Upadhyay, P R; Patel, K B; Mehta, K J; Varshney, A K; Mehta, M H

    2002-10-01

    The effect of photo-stabilization of Azadirachtin-A (Aza-A) was examined when exposed to sunlight and ultraviolet light in the presence of four structurally different ultraviolet stabilizers namely 4-aminobenzoic acid, 2,4-dihydroxybenzophenone, 4,4'-dihydroxybenzophenone and phenyl salicylate. The percentages of Aza-A recovered at different time intervals from slides exposed to different light conditions with and without UV stabilizers as well as kinetic studies indicated that the addition of phenyl salicylate in methanolic solution of Aza-A (in 1:1 mole ratio) provides the best photo-stabilization of Aza-A molecule among the four UV stabilizers studied.

  15. Phototoxic action of light emitting diode in the in vitro viability of Trichophyton rubrum.

    PubMed

    Amorim, José Cláudio Faria; Soares, Betania Maria; Alves, Orley Araújo; Ferreira, Marcus Vinícius Lucas; Sousa, Gerdal Roberto; Silveira, Lívio de Barros; Piancastelli, André Costa Cruz; Pinotti, Marcos

    2012-01-01

    Trichophyton rubrum is the most common agent of superficial mycosis of the skin and nails causing long lasting infections and high recurrence rates. Current treatment drawbacks involve topical medications not being able to reach the nail bed at therapeutic concentrations, systemic antifungal drugs failing to eradicate the fungus before the nails are renewed, severe side effects and selection of resistant fungal isolates. Photodynamic therapy (PDT) has been a promising alternative to conventional treatments. This study evaluated the in vitro effectiveness of toluidine blue O (TBO) irradiated by Light emitting diode (LED) in the reduction of T. rubrum viability. The fungal inoculums' was prepared and exposed to different TBO concentrations and energy densities of Light emitting diode for evaluate the T. rubrum sensibility to PDT and production effect fungicidal after photodynamic treatment. In addition, the profiles of the area and volume of the irradiated fungal suspensions were also investigated. A small reduction, in vitro, of fungal cells was observed after exposition to 100 µM toluidine blue O irradiated by 18 J/cm² Light emitting diode. Fungicidal effect occurred after 25 µM toluidine blue O irradiation by Light emitting diode with energy density of 72 J/cm². The analysis showed that the area and volume irradiated by the Light emitting diode were 52.2 mm² and 413.70 mm³, respectively. The results allowed to conclude that Photodynamic therapy using Light emitting diode under these experimental conditions is a possible alternative approach to inhibit in vitro T. rubrum and may be a promising new treatment for dermatophytosis caused by this fungus.

  16. Effect of 670-nm Light-Emitting Diode Light On Neuronal Cultures

    NASA Technical Reports Server (NTRS)

    Wong-Riley, Margaret T. T.; Whelan, Harry T.

    2002-01-01

    Light close to and within the near infrared range has documented benefits for promoting wound healing in human and animal studies. Our preliminary results using light-emitting diodes (LEDs) in this range have also demonstrated two-to five-fold increases in growth-phase-specific DNA synthesis in normal fibroblasts, muscle cells, osteoblasts, and mucosal epithelial cells in tissue cultures. However, the mechanisms of action of such light on cells are poorly understood. We hypothesized that the therapeutic effects of such light result from the stimulation of cellular events associated with increases in cytochrome oxidase activity. As a first step in testing our hypothesis, we subjected primary neuronal cultures to impulse blockade by tetrodotoxin (TTX), a voltage-dependent sodium channel blocker, and applied LED light at 670 nm to determine if it could partially or fully reverse the reduction of cytochrome oxidase activity by TTX. The wavelength and parameters were previously tested to be beneficial for wound healing.

  17. Synthesis and characterization of organic/inorganic heterostructure films for hybrid light emitting diode

    NASA Astrophysics Data System (ADS)

    Toyama, Toshihiko; Ichihara, Tokuyuki; Yamaguchi, Daisuke; Okamoto, Hiroaki

    2007-10-01

    Thin-film light emitting devices based on organic materials have been gathering attentions for applying a flat-panel display and a solid-state lighting. Alternatively, inorganic technologies such as Si-based thin-film technology have been growing almost independently. It is then expected that combining the Si-based thin-film technology with the organic light emitting diode (OLED) technology will develop innovative devices. Here, we report syntheses of the hybrid light emitting diode (LED) with a heterostructure consisting of p-type SiC x and tris-(8-hydroxyquinoline) aluminum films and characterization for the hybrid LEDs. We present the energy diagram of the heterostructure, and describe that the use of high dark conductivities of the p-type SiC x as well as inserting wide-gap intrinsic a-SiC x at the p-type SiC x/Alq interface are effective for improving device performance.

  18. Phosphorescent organic light emitting diodes with high efficiency and brightness

    DOEpatents

    Forrest, Stephen R; Zhang, Yifan

    2015-11-12

    An organic light emitting device including a) an anode; b) a cathode; and c) an emissive layer disposed between the anode and the cathode, the emissive layer comprising an organic host compound and a phosphorescent compound exhibiting a Stokes Shift overlap greater than 0.3 eV. The organic light emitting device may further include a hole transport layer disposed between the emissive layer and the anode; and an electron transport layer disposed between the emissive layer and the cathode. In some embodiments, the phosphorescent compound exhibits a phosphorescent lifetime of less than 10 .mu.s. In some embodiments, the concentration of the phosphorescent compound ranges from 0.5 wt. % to 10 wt. %.

  19. Benzoporphyrin derivative and light-emitting diode for use in photodynamic therapy: Applications of space light-emitting diode technology

    NASA Astrophysics Data System (ADS)

    Whelan, Harry T.; Houle, John M.; Bajic, Dawn M.; Schmidt, Meic H.; Reichert, Kenneth W.; Meyer, Glenn A.

    1998-01-01

    Photodynamic therapy (PDT) is a cancer treatment modality that recently has been applied as adjuvant therapy for brain tumors. PDT consists of intravenously injecting a photosensitizer, which preferentially accumulates in tumor cells, into a patient and then activating the photosensitizer with a light source. This results in free radical generation followed by cell death. The development of more effective light sources for PDT of brain tumors has been facilitated by applications of space light-emitting diode array technology; thus permitting deeper tumor penetration of light and use of better photosensitizers. Currently, the most commonly used photosensitizer for brain tumor PDT is Photofrin®. Photofrin® is a heterogeneous mixture of compounds derived from hematoporphyrin. Photofrin® is activated with a 630 nm laser light and does destroy tumor cells in animal models and humans. However, treatment failure does occur using this method. Most investigators attribute this failure to the limited penetration of brain tissue by a 630 nm laser light and to the fact that Photofrin® has only a minor absorption peak at 630 nm, meaning that only a small fraction of the chemical is activated. Benzoporphyrin Derivative Monoacid Ring A (BPD) is a new, second generation photosensitizer that can potentially improve PDT for brain tumors. BPD has a major absorption peak at 690 nm, which gives it two distinct advantages over Photofrin®. First, longer wavelengths of light penetrate brain tissue more easily so that larger tumors could be treated, and second, the major absorption peak means that a larger fraction of the drug is activated upon exposure to light. In the first part of this project we have studied the tumoricidal effects of BPD in vitro using 2A9 canine glioma and U373 human glioblastoma cell cultures. Using light emitting diodes (LED) with a peak emission of 688 nm as a light source, cell kill of up to 86 percent was measured in these cell lines by tumor DNA synthesis

  20. The Inherent Visible Light Signature of an Intense Underwater Ultraviolet Light Source Due to Combined Raman and Fluorescence Effects

    DTIC Science & Technology

    2000-01-01

    Humans cannot see ultraviolet light. The blue-sensitive cones in the retina would respond weakly to ultraviolet wavelengths if exposed to them, but...545, 1992. 3. C. S. Yentsch, and D. A. Phinney, " Autofluorescence and Raman scattering in the marine underwater environment," Ocean Optics X, SPIE

  1. Short-Wavelength Light-Emitting Devices With Enhanced Hole Injection Currents

    DTIC Science & Technology

    2005-05-01

    hot-hole injector with appreciably enhancement of the injection current is proposed and developed to be integrated with commonly used vertical...structures of the emitting devices. Second, we develop the alternative design of UV-light sources on the base of lateral p+ - i - n+ superlattice structures...enhancement of the injection current is proposed and developed to be integrated with commonly used vertical structures of the emitting devices. Second

  2. Printable candlelight-style organic light-emitting diode

    NASA Astrophysics Data System (ADS)

    Jou, J. H.; Singh, M.; Song, W. C.; Liu, S. H.

    2017-06-01

    Candles or oil lamps are currently the most friendly lighting source to human eyes, physiology, ecosystems, artifacts, environment, and night skies due to their blue light-less emission. Candle light also exhibits high light-quality that provides visual comfort. However, they are relatively low in power efficacy (0.3 lm/W), making them energy-wasting, besides having problems like scorching hot, burning, catching fire, flickering, carbon blacking, oxygen consuming, and release of green house gas etc. In contrast, candlelight organic light-emitting diode (OLED) can be made blue-hazard free and energy-efficient. The remaining challenges are to maximize its light-quality and enable printing feasibility, the latter of which would pave a way to cost-effective manufacturing. We hence demonstrate herein the design and fabrication of a candlelight OLED via wet-process. From retina protection perspective, its emission is 13, 12 and 8 times better than those of the blue-enriched white CFL, LED and OLED. If used at night, it is 9, 6 and 4 times better from melatonin generation perspective.

  3. Preventing Ultraviolet Light-Induced Damage: The Benefits of Antioxidants

    ERIC Educational Resources Information Center

    Yip, Cheng-Wai

    2007-01-01

    Extracts of fruit peels contain antioxidants that protect the bacterium "Escherichia coli" against damage induced by ultraviolet light. Antioxidants neutralise free radicals, thus preventing oxidative damage to cells and deoxyribonucleic acid. A high survival rate of UV-exposed cells was observed when grapefruit or grape peel extract was…

  4. Using light emitting diodes in traffic signals : final report.

    DOT National Transportation Integrated Search

    1998-07-01

    In 1993, the Oregon Department of Transportation (ODOT) began testing red light emitting diodes (LED's) as a replacement to the incandescent lamps in vehicular and pedestrian signals. Field performance was found to be reliable and subsequently ODOT b...

  5. White organic light-emitting devices with high color purity and stability

    NASA Astrophysics Data System (ADS)

    Bai, Yajie; Liu, Su; Li, Hairong; Liu, Chunjuan; Wang, Jinshun; Chang, Jinxian

    2014-04-01

    A white organic light-emitting device (WOLED) with dual-emitting layers was presented, in which the blue fluorescent dye 2,5,8,11-terta-tertbutylperylene (TBPe) was doped in 2-methyl-9, 10-di(2-naphthyl)-anthracene (MADN) as a blue-emitting layer, while 5,6,11,12-tetraphenylnaphthacene (rubrene, Rb) was doped in the above-mentioned materials as a yellow-emitting layer. The fabricated monochromatic devices using the blue- and yellow-emitting layer have demonstrated that the direct charge trapping mechanism is the dominant emission mechanism in the yellow OLED. Studies on the WOLEDs with dual-emitting layers have shown that the performances of these devices are strongly susceptible to the thickness of the emitting layer and the stack order of two emitting layers. Structure of ITO(160 nm)/NPB(30 nm)/MADN: 5 wt%TBPe: 3 wt%Rb(10 nm)/MADN: 5 wt%TBPe(20 nm)/BCP (10 nm)/Alq3(20 nm)/Al(100 nm) was determined to be the most favorable WOLED. The maximum luminance of 16 000 cd cm-2 at the applied voltage of 13.4 V and Commission International de 1‧Eclairage (CIE) coordinates of (0.3263, 0.3437) which is closer to the standard white light (CIE (0.33, 0.33)) than the most recent reported WOLEDs were obtained. Moreover, there is just slight variation of CIE coordinates (ΔCIEx, y = 0.0171, 0.0167; corresponding Δu‧v‧ = 0.0119) when the current density increases from 10 to 100 mA cm-2. It reveals that the emissive dopant Rb acts as charge traps to improve electron-hole balance, provides sites for electron-hole recombination and thus makes carriers distribute more evenly in the dual-emitting layers which broaden the recombination zone and improve the stability of the CIE coordinates.

  6. The use of ionic salt dyes as amorphous, thermally stable emitting layers in organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Chondroudis, Konstantinos; Mitzi, David B.

    2000-01-01

    The conversion of two neutral dye molecules (D) to ionic salts (H2N-D-NH2ṡ2HX) and their utilization as emitting layers in organic light-emitting diodes (OLEDs) is described. The dye salts, AEQTṡ2HCl and APTṡ2HCl, can be deposited as amorphous films using conventional evaporation techniques. X-ray diffraction and scanning electron microscopy analysis, coupled with thermal annealing studies, demonstrate the resistance of the films to crystallization. This stability is attributed to strong ionic forces between the relatively rigid molecules. OLEDs incorporating such salts for emitting layers exhibit better thermal stability compared with devices made from the corresponding neutral dyes (H2N-D-NH2). These results suggest that ionic salts may more generally enable the formation of thermally stable, amorphous emitting, and charge transporting layers.

  7. Effects of exposure to ultraviolet light on the development of Rana pipiens, the northern leopard frog

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Williams, J.J.; Wofford, H.W.

    1996-10-01

    The increase in ultraviolet light intensity levels due to ozone depletion recently has been linked to the decline in amphibian population. In this experiment, eggs and larvae of Rana pipiens were subjected to differing amounts of ultraviolet radiation to determine the effects of ultraviolet light on the development of amphibian tadpoles. The total length, length of body without tail, and maximum width of each specimen was recorded for a month of the tadpoles` development, including several measurements after the ultraviolet exposures were concluded. It was found that ultraviolet exposure significantly reduced the size of the organisms in comparison with themore » control group in all three measured areas. Ultraviolet radiation altered the health and appearance of the exposed organisms and was lethal at large amounts. This experiment showed that ultraviolet radiation could cause many problems in developing amphibians. By slowing their development and physically weakening predation, thus contributing to a decline in overall population levels.« less

  8. Ultraviolet light curves of beta Lyrae: Comparison of OAO A-2, IUE, and Voyager Observations

    NASA Technical Reports Server (NTRS)

    Kondo, Yoji; Mccluskey, George E.; Silvis, Jeffery M. S.; Polidan, Ronald S.; Mccluskey, Carolina P. S.; Eaton, Joel A.

    1994-01-01

    The six-band ultraviolet light curves of beta Lyrae obtained with the Orbiting Astronomical Observatory (OAO) A-2 in 1970 exhibited a very unusual behavior. The secondary minimum deepened at shorter wavelength, indicating that one was not observing light variations caused primarily by the eclipses of two stars having a roughly Planckian energy distribution. It was then suggested that the light variations were caused by a viewing angle effect of an optically thick, ellipsoidal circumbinary gas cloud. Since 1978 beta Lyrae has been observed with the International Ultraviolet Explorer (IUE) satellite. We have constructed ultraviolet light curves from the IUE archival data for comparison with the OAO A-2 results. We find that they are in substantial agreement with each other. The Voyager ultraviolet spectrometer was also used to observe this binary during a period covered by IUE observations. The Voyager results agree with those of the two other satellite observatories at wavelengths longer than about 1350 A. However, in the wavelength region shorter than the Lyman-alpha line at 1216 A, the light curves at 1085 and 965 A show virtually no light variation except an apparent flaring near phase 0.7, which is also in evidence at longer wavelengths. We suggest that the optically thick circumbinary gas cloud, which envelops the two stars completely, assumes a roughly spherical shape when observed at these shorter wavelengths.

  9. Stacked Device of Polymer Light-Emitting Diode Driven by Metal-Base Organic Transistor

    NASA Astrophysics Data System (ADS)

    Yoneda, Kazuhiro; Nakayama, Ken-ichi; Yokoyama, Masaaki

    2008-02-01

    We fabricated a new light-emitting device that combined a polymer light-emitting diode (PLED) and a vertical-type metal-base organic transistor (MBOT) through a floating electrode. By employing a layered floating electrode of Mg:Ag/Au, the MBOT on the PLED was operated successfully and a current amplification factor of approximately 20 was observed. The PLED luminescence exceeding 100 cd/m2 can be modulated using the MBOT with a low base voltage (2.8 V) and VCC (8 V). The emission contrast (on/off ratio) was improved with insertion of an insulating layer under the base, and the cut-off frequency was estimated to be 8 kHz. This device is expected to be a promising driving system of organic light-emitting diode (OLED), realizing low voltage and high numerical aperture.

  10. Light emitting diodes (LED): applications in forest and native plant nurseries

    Treesearch

    Thomas D. Landis; Jeremiah R. Pinto; R. Kasten Dumroese

    2013-01-01

    It was quotes like this that made us want to learn more about light emitting diodes (LED). Other than knowing that LEDs were the latest innovation in artificial lighting, we knew that we had a lot to learn. So we started by reviewing some of the basics. The following review is a brief synopsis of how light affects plants and some discussion about LED lighting. If you...

  11. NEW Fe IX LINE IDENTIFICATIONS USING SOLAR AND HELIOSPHERIC OBSERVATORY/SOLAR ULTRAVIOLET MEASUREMENT OF EMITTED RADIATION AND HINODE/EIS JOINT OBSERVATIONS OF THE QUIET SUN

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Landi, E.; Young, P. R.

    2009-12-20

    In this work, we study joint observations of Hinode/EUV Imaging Spectrometer (EIS) and Solar and Heliospheric Observatory/Solar Ultraviolet Measurement of Emitted Radiation of Fe IX lines emitted by the same level of the high energy configuration 3s {sup 2}3p {sup 5}4p. The intensity ratios of these lines are dependent on atomic physics parameters only and not on the physical parameters of the emitting plasma, so that they are excellent tools to verify the relative intensity calibration of high-resolution spectrometers that work in the 170-200 A and 700-850 A wavelength ranges. We carry out extensive atomic physics calculations to improve themore » accuracy of the predicted intensity ratio, and compare the results with simultaneous EIS-SUMER observations of an off-disk quiet Sun region. We were able to identify two ultraviolet lines in the SUMER spectrum that are emitted by the same level that emits one bright line in the EIS wavelength range. Comparison between predicted and measured intensity ratios, wavelengths and energy separation of Fe IX levels confirms the identifications we make. Blending and calibration uncertainties are discussed. The results of this work are important for cross-calibrating EIS and SUMER, as well as future instrumentation.« less

  12. Suspended light-emitting diode featuring a bottom dielectric distributed Bragg reflector

    NASA Astrophysics Data System (ADS)

    Cai, Wei; Wang, Wei; Zhu, Bingcheng; Gao, Xumin; Zhu, Guixia; Yuan, Jialei; Wang, Yongjin

    2018-01-01

    Here, we propose, fabricate and characterize the light manipulation of a suspended-membrane InGaN/GaN multiple-quantum-well light-emitting diode (MQW-LED) with a dielectric distributed Bragg reflector (DBR) positioned at the bottom, implemented on a GaN-on-silicon platform. Silicon removal is conducted to obtain the suspended MQW-LED architecture, and back wafer thinning of the epitaxial film is performed to improve the device performance. A 6-pair SiO2/Ta2O5 DBR is deposited on the backside to manipulate the emitted light. The experimental results demonstrate that the bottom dielectric DBR exhibits high reflectivity and distinctly changes the light emission, which are consistent with the performed simulation results. This work represents a significant step towards the realization of inexpensive, electrically driven and simply fabricated GaN VCSELs for potential use in number of applications.

  13. Extraction of surface plasmons in organic light-emitting diodes via high-index coupling.

    PubMed

    Scholz, Bert J; Frischeisen, Jörg; Jaeger, Arndt; Setz, Daniel S; Reusch, Thilo C G; Brütting, Wolfgang

    2012-03-12

    The efficiency of organic light-emitting diodes (OLEDs) is still limited by poor light outcoupling. In particular, the excitation of surface plasmon polaritons (SPPs) at metal-organic interfaces represents a major loss channel. By combining optical simulations and experiments on simplified luminescent thin-film structures we elaborate the conditions for the extraction of SPPs via coupling to high-index media. As a proof-of-concept, we demonstrate the possibility to extract light from wave-guided modes and surface plasmons in a top-emitting white OLED by a high-index prism.

  14. Safety of light emitting diodes in toys.

    PubMed

    Higlett, M P; O'Hagan, J B; Khazova, M

    2012-03-01

    Light emitting diodes (LEDs) are increasingly being used in toys. An assessment methodology is described for determining the accessible emission limits for the optical radiation from the toys, which takes account of expected use and reasonably foreseeable misuse of toys. Where data are available, it may be possible to assess the toy from the data sheet alone. If this information is not available, a simple measurement protocol is proposed.

  15. Electrical and Optical Enhancement in Internally Nanopatterned Organic Light-Emitting Diodes

    NASA Astrophysics Data System (ADS)

    Fina, Michael Dane

    Organic light-emitting diodes (OLEDs) have made tremendous technological progress in the past two decades and have emerged as a top competitor for next generation light-emitting displays and lighting. State-of-the-art OLEDs have been reported in literature to approach, and even surpass, white fluorescent tube efficiency. However, despite rapid technological progress, efficiency metrics must be improved to compete with traditional inorganic light-emitting diode (LED) technology. Organic materials possess specialized traits that permit manipulations to the light-emitting cavity. Overall, as demonstrated within, these modifications can be used to improve electrical and optical device efficiencies. This work is focused at analyzing the effects that nanopatterned geometric modifications to the organic active layers play on device efficiency. In general, OLED efficiency is complicated by the complex, coupled processes which contribute to spontaneous dipole emission. A composite of three sub-systems (electrical, exciton and optical) ultimately dictate the OLED device efficiency. OLED electrical operation is believed to take place via a low-mobility-modified Schottky injection process. In the injection-limited regime, geometric effects are expected to modify the local electric field leading to device current enhancement. It is shown that the patterning effect can be used to enhance charge carrier parity, thereby enhancing overall recombination. Current density and luminance characteristics are shown to be improved by OLED nanopatterning from both the model developed within and experimental techniques. Next, the optical enhancement effects produced by the nanopatterned array are considered. Finite-difference time-domain (FDTD) simulations are used to determine positional, spectral optical enhancement for the nanopatterned device. The results show beneficial effects to the device performance. The optical enhancements are related to the reduction in internal radiative

  16. Light intensity and quality from sole-source light-emitting diodes impact growth, morphology, and nutrient content of Brassica microgreens

    USDA-ARS?s Scientific Manuscript database

    Multi-layer vertical production systems using sole-source (SS) lighting can be used for microgreen production; however, traditional SS lighting can consume large amounts of electrical energy. Light-emitting diodes (LEDs) offer many advantages over conventional light sources including: high photoelec...

  17. Investigation of mixed-host organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Yeh Yee, Kee

    One of the limiting factors to the OLED stability or lifetime is the charge buildup at the bilayer heterojunction (HJ) between the hole transport layer (HTL) and electron transport layer (ETL). In recent years, this abrupt interface has been moderated by mixing HTL and ETL to form a single mixed-host, light emitting layer. For uniformly mixed-host (UM) OLED, the device lifetime and also the efficiency were improved due to the spatial broadening of the recombination zone. Similar device architectures, such as the step-wise graded mixed-host (SGM-OLED) and the continuously graded mixed-host (CGM-OLED) have also been implemented by a number of researchers. In this work, a premix of hole transport material (HTM) and electron transport material (ETM), namely TPD and Alq, is prepared for one-step thermal evaporation of the mixed-host light emitting layer (EML). Depending on the evaporation rate, the CGM-OLEDs with different concentration profiles of HTM and ETM in the EML are obtained, which are inversely proportional to each other.

  18. Arbitrary helicity control of circularly polarized light from lateral-type spin-polarized light-emitting diodes at room temperature

    NASA Astrophysics Data System (ADS)

    Nishizawa, Nozomi; Aoyama, Masaki; Roca, Ronel C.; Nishibayashi, Kazuhiro; Munekata, Hiro

    2018-05-01

    We demonstrate arbitrary helicity control of circularly polarized light (CPL) emitted at room temperature from the cleaved side facet of a lateral-type spin-polarized light-emitting diode (spin-LED) with two ferromagnetic electrodes in an antiparallel magnetization configuration. Driving alternate currents through the two electrodes results in polarization switching of CPL with frequencies up to 100 kHz. Furthermore, tuning the current density ratio in the two electrodes enables manipulation of the degree of circular polarization. These results demonstrate arbitrary electrical control of polarization with high speed, which is required for the practical use of lateral-type spin-LEDs as monolithic CPL light sources.

  19. Development of 1300 nm GaAs-Based Microcavity Light-Emitting Diodes

    DTIC Science & Technology

    2001-06-01

    vertical - cavity surface emitting lasers ( VCSEL ) and micro- cavity light- emitting diodes (MC-LED) for short-to-medium... epitaxial growth run [1 ]. Self-organized In(Ga)As quantum dot (QD) heterostructures grown by molecular beam epitaxy ( MBE ) are promising candidates as...successfully grown by molecular beam epitaxy on GaAs substrates without the need to rely on any in-situ calibration technique. Fabricated

  20. Polarized electroluminescence from edge-emission organic light emitting devices

    NASA Astrophysics Data System (ADS)

    Ran, G. Z.; Jiang, D. F.

    2011-01-01

    We report the experimental observation and measurement of the polarized electroluminescence from an edge-emission Si based- organic light emitting device (OLED) with a Sm/Au or Sm/Ag cathode. Light collected from the OLED edge comes from the scattering of the surface plasmon polaritons (SPPs) at the device boundary. This experiment shows that such Si-OLED can be an electrically excited SPP source on a silicon chip for optical interconnect based on SPPs.

  1. Poly (p-phenyleneneacetylene) light-emitting diodes

    DOEpatents

    Shinar, Joseph; Swanson, Leland S.; Lu, Feng; Ding, Yiwei; Barton, Thomas J.; Vardeny, Zeev V.

    1994-10-04

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes.

  2. Poly (p-phenyleneacetylene) light-emitting diodes

    DOEpatents

    Shinar, J.; Swanson, L.S.; Lu, F.; Ding, Y.; Barton, T.J.; Vardeny, Z.V.

    1994-10-04

    Acetylene containing poly(p-phenyleneacetylene) (PPA) - based light-emitting diodes (LEDs) are provided. The LEDs are fabricated by coating a hole-injecting electrode, preferably an indium tin oxide (ITO) coated glass substrate, with a PPA polymer, such as a 2,5-dibutoxy or a 2,5-dihexoxy derivative of PPA, dissolved in an organic solvent. This is then followed by evaporating a layer of material capable of injecting electrons, such as Al or Al/Ca, onto the polymer to form a base electrode. This composition is then annealed to form efficient EL diodes. 8 figs.

  3. Low driving voltage blue, green, yellow, red and white organic light-emitting diodes with a simply double light-emitting structure.

    PubMed

    Zhang, Zhensong; Yue, Shouzhen; Wu, Yukun; Yan, Pingrui; Wu, Qingyang; Qu, Dalong; Liu, Shiyong; Zhao, Yi

    2014-01-27

    Low driving voltage blue, green, yellow, red and white phosphorescent organic light-emitting diodes (OLEDs) with a common simply double emitting layer (D-EML) structure are investigated. Our OLEDs without any out-coupling schemes as well as n-doping strategies show low driving voltage, e.g. < 2.4 V for onset and < 3 V for 1000 cd/m2, and high efficiency of 32.5 lm/W (13.3%), 58.8 lm/W (14.3%), 55.1 lm/W (14.6%), 24.9 lm/W (13.7%) and 45.1 lm/W (13.5%) for blue, green, yellow, red and white OLED, respectively. This work demonstrates that the low driving voltages and high efficiencies can be simultaneously realized with a common simply D-EML structure.

  4. Caenorhabditis elegans as a model to study the impact of exposure to light emitting diode (LED) domestic lighting.

    PubMed

    Abdel-Rahman, Fawzia; Okeremgbo, Bethel; Alhamadah, Fatimah; Jamadar, Sakha; Anthony, Kevin; Saleh, Mahmoud A

    2017-04-16

    This study aimed to investigate the biological impact of exposure on domestic light emitting diodes (LED) lighting using the free-living nematode Caenorhabditis elegans as a model. Nematodes were separately exposed to white LED light covering the range of 380-750 nm, blue light at 450 nm and black light at 380-420 nm for one life cycle (egg to adult) with dark exposure as the control. Each light range induced stress to the nematode C. elegans such as reducing the number of the hatched eggs and/or delayed the maturation of the hatched eggs to the adult stage. In addition, it lowered or prevented the ability of adults to lay eggs and impaired the locomotion in the exposed worms. The observed type of biological stress was also associated with the production of reactive oxygen species (ROS) as compared to nematodes grown in the dark. It is concluded that the blue light component of white LED light may cause health problems, and further investigation is required to test commercial brands of white LEDs that emit different amounts of blue light.

  5. Solution processed, white emitting tandem organic light-emitting diodes with inverted device architecture.

    PubMed

    Höfle, Stefan; Schienle, Alexander; Bernhard, Christoph; Bruns, Michael; Lemmer, Uli; Colsmann, Alexander

    2014-08-13

    Fully solution processed monochromatic and white-light emitting tandem or multi-photon polymer OLEDs with an inverted device architecture have been realized by employing WO3 /PEDOT:PSS/ZnO/PEI charge carrier generation layers. The luminance of the sub-OLEDs adds up in the stacked device indicating multi-photon emission. The white OLEDs exhibit a CRI of 75. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  6. Photomorphogenic responses to ultraviolet-B light.

    PubMed

    Jenkins, Gareth I

    2017-11-01

    Exposure to ultraviolet B (UV-B) light regulates numerous aspects of plant metabolism, morphology and physiology through the differential expression of hundreds of genes. Photomorphogenic responses to UV-B are mediated by the photoreceptor UV RESISTANCE LOCUS8 (UVR8). Considerable progress has been made in understanding UVR8 action: the structural basis of photoreceptor function, how interaction with CONSTITUTIVELY PHOTOMORPHOGENIC 1 initiates signaling and how REPRESSOR OF UV-B PHOTOMORPHOGENESIS proteins negatively regulate UVR8 action. In addition, recent research shows that UVR8 mediates several responses through interaction with other signaling pathways, in particular auxin signaling. Nevertheless, many aspects of UVR8 action remain poorly understood. Most research to date has been undertaken with Arabidopsis, and it is important to explore the functions and regulation of UVR8 in diverse plant species. Furthermore, it is essential to understand how UVR8, and UV-B signaling in general, regulates processes under natural growth conditions. Ultraviolet B regulates the expression of many genes through UVR8-independent pathways, but the activity and importance of these pathways in plants growing in sunlight are poorly understood. © 2017 John Wiley & Sons Ltd.

  7. STUDIES ON THE AMOUNT OF LIGHT EMITTED BY MIXTURES OF CYPRIDINA LUCIFERIN AND LUCIFERASE

    PubMed Central

    Stevens, Kenneth P.

    1927-01-01

    1. A photometric method was devised for measuring the intensities of light emitted per cc. of hiciferin solution and calculating the amount of light emitted per gm. of dried Cypridina powder. A total of 128 runs was made and the data are incorporated in this report. 2. The maximum amount of light emitted from 1 gm. of powder under the experimental conditions was 0.655 lumens. Different samples of powder vary greatly in amount of light production. 3. When the concentration of substrate is doubled, nearly twice as much light is emitted, or an average ratio 2C/C of 1.86. Calculations of total light emissions per gm. of powder at different concentrations indicate that slightly more light is produced from the smaller concentrations. The maximum amount of light was produced by the solutions made with neutral sea water and averaged 0.445 lumens. The least light was obtained from solutions in distilled water saturated with hydrogen. The technique allows too rapid spontaneous oxidation prior to the saturation with hydrogen. The maximum amount of light from such experiments was only 0.077 lumens. Acid sea water solutions subsequently neutralized gave an average maximum of 0.386 lumens per gm. of powder per second. 4. When the concentration of enzyme is doubled, approximately the same amount of light is produced by both concentrations, although the stronger concentrations are slightly less effective than weaker ones. This undoubtedly is due to the colloidal nature of the enzyme and is a function of surface rather than of mass. In dilute solutions greater dispersion probably allows for greater adsorption to the surface of the enzyme. The average maximum amount of light produced in the series of enzyme experiments is of the magnitude 0.56 lumens per gm. of powder. PMID:19872366

  8. Mapping the solar wind HI outflow velocity in the inner heliosphere by coronagraphic ultraviolet and visible-light observations

    NASA Astrophysics Data System (ADS)

    Dolei, S.; Susino, R.; Sasso, C.; Bemporad, A.; Andretta, V.; Spadaro, D.; Ventura, R.; Antonucci, E.; Abbo, L.; Da Deppo, V.; Fineschi, S.; Focardi, M.; Frassetto, F.; Giordano, S.; Landini, F.; Naletto, G.; Nicolini, G.; Nicolosi, P.; Pancrazzi, M.; Romoli, M.; Telloni, D.

    2018-05-01

    We investigated the capability of mapping the solar wind outflow velocity of neutral hydrogen atoms by using synergistic visible-light and ultraviolet observations. We used polarised brightness images acquired by the LASCO/SOHO and Mk3/MLSO coronagraphs, and synoptic Lyα line observations of the UVCS/SOHO spectrometer to obtain daily maps of solar wind H I outflow velocity between 1.5 and 4.0 R⊙ on the SOHO plane of the sky during a complete solar rotation (from 1997 June 1 to 1997 June 28). The 28-days data sequence allows us to construct coronal off-limb Carrington maps of the resulting velocities at different heliocentric distances to investigate the space and time evolution of the outflowing solar plasma. In addition, we performed a parameter space exploration in order to study the dependence of the derived outflow velocities on the physical quantities characterising the Lyα emitting process in the corona. Our results are important in anticipation of the future science with the Metis instrument, selected to be part of the Solar Orbiter scientific payload. It was conceived to carry out near-sun coronagraphy, performing for the first time simultaneous imaging in polarised visible-light and ultraviolet H I Lyα line, so providing an unprecedented view of the solar wind acceleration region in the inner corona. The movie (see Sect. 4.2) is available at https://www.aanda.org

  9. Light-induced pyroelectric effect as an effective approach for ultrafast ultraviolet nanosensing

    NASA Astrophysics Data System (ADS)

    Wang, Zhaona; Yu, Ruomeng; Pan, Caofeng; Li, Zhaoling; Yang, Jin; Yi, Fang; Wang, Zhong Lin

    2015-09-01

    Zinc oxide is potentially a useful material for ultraviolet detectors; however, a relatively long response time hinders practical implementation. Here by designing and fabricating a self-powered ZnO/perovskite-heterostructured ultraviolet photodetector, the pyroelectric effect, induced in wurtzite ZnO nanowires on ultraviolet illumination, has been utilized as an effective approach for high-performance photon sensing. The response time is improved from 5.4 s to 53 μs at the rising edge, and 8.9 s to 63 μs at the falling edge, with an enhancement of five orders in magnitudes. The specific detectivity and the responsivity are both enhanced by 322%. This work provides a novel design to achieve ultrafast ultraviolet sensing at room temperature via light-self-induced pyroelectric effect. The newly designed ultrafast self-powered ultraviolet nanosensors may find promising applications in ultrafast optics, nonlinear optics, optothermal detections, computational memories and biocompatible optoelectronic probes.

  10. Luminescent properties of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} and its potential application in white light emitting diodes

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Wang, Zhijun, E-mail: wangzhijunmail@yahoo.com.cn; Li, Panlai; Li, Ting

    2013-06-01

    Graphical abstract: Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} phosphor can be effectively excited by an ultraviolet and near-ultraviolet light, and produce a bright blue emission centered at 436 nm. The CIE chromaticity coordinations (x, y) of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+}(NSCE)/Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}(LSSE) vary with the molar ratio of the two constituents. When NSCE/LSSE is 1:3, the CIE chromaticity coordination is (0.332, 0.346), which is close to that of the natural sunlight (0.33, 0.33). The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a promising blue phosphor for UV chip-based multi-phosphor converted white light emitting diodes. Highlights: ► Na{sub 2}CaSiO{sub 4}:Eu{supmore » 2+} shows the blue emission with a peak at 436 nm and broad excitation band in the UV/n-UV range. ► White light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor with the Li{sub 2}SrSiO{sub 4}:Eu{sup 2+} yellow phosphor. ► Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} would be a promising blue phosphor candidate for UV chip-based multi-phosphor converted white LEDs. - Abstract: A novel blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is synthesized by a high temperature solid-state reaction, and its luminescent properties are systematically studied. Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} can be effectively excited by the 354 nm radiation, and create blue emission (436 nm). The emission intensity of Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} is influenced by the Eu{sup 2+} doping content, and the optimal doping content is 1.5%, and the concentration quenching mechanism of Eu{sup 2+} in Na{sub 2}CaSiO{sub 4} can be attributed to the multipolar interaction. The white light with CIE coordinates (0.332, 0.346) is generated by mixing the blue phosphor Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} with the yellow phosphor Li{sub 2}SrSiO{sub 4}:Eu{sup 2+}. The results indicate that Na{sub 2}CaSiO{sub 4}:Eu{sup 2+} may be a potential blue emitting phosphor for UV chip-based multi

  11. Quantum properties of light emitted by dipole nano-laser

    NASA Astrophysics Data System (ADS)

    Ghannam, Talal

    Recent technological advances allow entire optical systems to be lithographically implanted on small silicon chips. These systems include tiny semiconductor lasers that function as light sources for digital optical signals. Future advances will rely on even smaller components. At the theoretical limit of this process, the smallest lasers will have an active medium consisting of a single atom (natural or artificial). Several suggestions for how this can be accomplished have already been published, such as nano-lasers based on photonic crystals and nano wires. In particular, the "dipole nanolaser" consists of a single quantum dot functioning as the active medium. It is optically coupled to a metal nanoparticles that form a resonant cavity. Laser light is generated from the near-field optical signal. The proposed work is a theoretical exploration of the nature of the resulting laser light. The dynamics of the system will be studied and relevant time scales described. These will form the basis for a set of operator equations describing the quantum properties of the emitted light. The dynamics will be studied in both density matrix and quantum Langevin formulations, with attention directed to noise sources. The equations will be linearized and solved using standard techniques. The result of the study will be a set of predicted noise spectra describing the statistics of the emitted light. The goal will be to identify the major noise contributions and suggest methods for suppressing them. This will be done by studying the probability of getting squeezed light from the nanoparticle for the certain scheme of parameters.

  12. Polarized organic light-emitting device on a flexible giant birefringent optical reflecting polarizer substrate.

    PubMed

    Park, Byoungchoo; Park, Chan Hyuk; Kim, Mina; Han, Mi-Young

    2009-06-08

    We present the results of a study of highly linear polarized light emissions from an Organic Light-Emitting Device (OLED) that consisted of a flexible Giant Birefringent Optical (GBO) multilayer polymer reflecting polarizer substrate. Luminous Electroluminescent (EL) emissions over 4,500 cd/m(2) were produced from the polarized OLED with high peak efficiencies in excess of 6 cd/A and 2 lm/W at relatively low operating voltages. The direction of polarization for the emitted EL light corresponded to the passing (ordinary) axis of the GBO-reflecting polarizer. Furthermore, the estimated polarization ratio between the brightness of two linearly polarized EL emissions parallel and perpendicular to the passing axis could be as high as 25 when measured over the whole emitted luminance range.

  13. Surface plasmon coupling for suppressing p-GaN absorption and TM-polarized emission in a deep-UV light-emitting diode.

    PubMed

    Kuo, Yang; Su, Chia-Ying; Hsieh, Chieh; Chang, Wen-Yen; Huang, Chu-An; Kiang, Yean-Woei; Yang, C C

    2015-09-15

    The radiated power enhancement (suppression) of an in- (out-of-) plane-oriented radiating dipole at a desired emission wavelength in the deep-ultraviolet (UV) range when it is coupled with a surface plasmon (SP) resonance mode induced on a nearby Al nanoparticle (NP) is demonstrated. Also, it is found that the enhanced radiated power propagates mainly in the direction from the Al NP toward the dipole. Such SP coupling behaviors can be used for suppressing the transverse-magnetic (TM)-polarized emission, enhancing the transverse-electric-polarized emission, and reducing the UV absorption of the p-GaN layer in an AlGaN-based deep-UV light-emitting diode by embedding a sphere-like Al NP in its p-AlGaN layer.

  14. Genotoxicity and carcinogenicity of the light emitted by artificial illumination systems.

    PubMed

    De Flora, Silvio

    2013-03-01

    The light delivered by artificial illumination systems, and in particular by halogen quartz bulbs, contains UVA, UVB, and UVC radiation, is genotoxic to both bacterial and human cells and is potently carcinogenic to hairless mice. Since IARC has classified UV radiation in Group 1, any source of UV light poses a carcinogenic hazard to humans. Suitable regulations would be needed in order to control the safety of the light emitted by artificial light sources.

  15. Hazard of ultraviolet radiation emitted in gas metal arc welding of mild steel.

    PubMed

    Nakashima, Hitoshi; Utsunomiya, Akihiro; Takahashi, Jyunya; Fujii, Nobuyuki; Okuno, Tsutomu

    2016-09-30

    Ultraviolet radiation (UVR) emitted during arc welding frequently causes keratoconjunctivitis and erythema in the workplace. The degree of hazard from UVR exposure depends on the welding method and conditions. Therefore, it is important to identify the UVR levels present under various conditions. We experimentally evaluated the UVR levels emitted in gas metal arc welding (GMAW) of mild steel. We used both a pulsed welding current and a non-pulsed welding current. The shielding gases were 80% Ar + 20% CO 2 and 100% CO 2 . The effective irradiance defined in the American Conference of Governmental Industrial Hygienists guidelines was used to quantify the UVR hazard. The effective irradiance measured in this study was in the range of 0.51-12.9 mW/cm 2 at a distance of 500 mm from the arc. The maximum allowable exposure times at these levels are only 0.23-5.9 s/day. The following conclusions were made regarding the degree of hazard from UVR exposure during the GMAW of mild steel: (1) It is more hazardous at higher welding currents than at lower welding currents. (2) At higher welding currents, it is more hazardous when 80% Ar + 20% CO 2 is used as a shielding gas than when 100% CO 2 is used. (3) It is more hazardous for pulsed welding currents than for non-pulsed welding currents. (4) It appears to be very hazardous when metal transfer is the spray type. This study demonstrates that unprotected exposure to UVR emitted by the GMAW of mild steel is quite hazardous.

  16. Hazard of ultraviolet radiation emitted in gas metal arc welding of mild steel

    PubMed Central

    Nakashima, Hitoshi; Utsunomiya, Akihiro; Takahashi, Jyunya; Fujii, Nobuyuki; Okuno, Tsutomu

    2016-01-01

    Objectives: Ultraviolet radiation (UVR) emitted during arc welding frequently causes keratoconjunctivitis and erythema in the workplace. The degree of hazard from UVR exposure depends on the welding method and conditions. Therefore, it is important to identify the UVR levels present under various conditions. Methods: We experimentally evaluated the UVR levels emitted in gas metal arc welding (GMAW) of mild steel. We used both a pulsed welding current and a non-pulsed welding current. The shielding gases were 80% Ar + 20% CO2 and 100% CO2. The effective irradiance defined in the American Conference of Governmental Industrial Hygienists guidelines was used to quantify the UVR hazard. Results: The effective irradiance measured in this study was in the range of 0.51-12.9 mW/cm2 at a distance of 500 mm from the arc. The maximum allowable exposure times at these levels are only 0.23-5.9 s/day. Conclusions: The following conclusions were made regarding the degree of hazard from UVR exposure during the GMAW of mild steel: (1) It is more hazardous at higher welding currents than at lower welding currents. (2) At higher welding currents, it is more hazardous when 80% Ar + 20% CO2 is used as a shielding gas than when 100% CO2 is used. (3) It is more hazardous for pulsed welding currents than for non-pulsed welding currents. (4) It appears to be very hazardous when metal transfer is the spray type. This study demonstrates that unprotected exposure to UVR emitted by the GMAW of mild steel is quite hazardous. PMID:27488036

  17. Light-modulating pressure sensor with integrated flexible organic light-emitting diode.

    PubMed

    Cheneler, D; Vervaeke, M; Thienpont, H

    2014-05-01

    Organic light-emitting diodes (OLEDs) are used almost exclusively for display purposes. Even when implemented as a sensing component, it is rarely in a manner that exploits the possible compliance of the OLED. Here it is shown that OLEDs can be integrated into compliant mechanical micro-devices making a new range of applications possible. A light-modulating pressure sensor is considered, whereby the OLED is integrated with a silicon membrane. It is shown that such devices have potential and advantages over current measurement techniques. An analytical model has been developed that calculates the response of the device. Ray tracing numerical simulations verify the theory and show that the design can be optimized to maximize the resolution of the sensor.

  18. Ultrastrong light-matter coupling in electrically doped microcavity organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Mazzeo, M.; Genco, A.; Gambino, S.; Ballarini, D.; Mangione, F.; Di Stefano, O.; Patanè, S.; Savasta, S.; Sanvitto, D.; Gigli, G.

    2014-06-01

    The coupling of the electromagnetic field with an electronic transition gives rise, for strong enough light-matter interactions, to hybrid states called exciton-polaritons. When the energy exchanged between light and matter becomes a significant fraction of the material transition energy an extreme optical regime called ultrastrong coupling (USC) is achieved. We report a microcavity embedded p-i-n monolithic organic light emitting diode working in USC, employing a thin film of squaraine dye as active layer. A normalized coupling ratio of 30% has been achieved at room temperature. These USC devices exhibit a dispersion-less angle-resolved electroluminescence that can be exploited for the realization of innovative optoelectronic devices. Our results may open the way towards electrically pumped polariton lasers.

  19. Optimization of freeform lightpipes for light-emitting-diode projectors.

    PubMed

    Fournier, Florian; Rolland, Jannick

    2008-03-01

    Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

  20. Optimization of freeform lightpipes for light-emitting-diode projectors

    NASA Astrophysics Data System (ADS)

    Fournier, Florian; Rolland, Jannick

    2008-03-01

    Standard nonimaging components used to collect and integrate light in light-emitting-diode-based projector light engines such as tapered rods and compound parabolic concentrators are compared to optimized freeform shapes in terms of transmission efficiency and spatial uniformity. We show that the simultaneous optimization of the output surface and the profile shape yields transmission efficiency within the étendue limit up to 90% and spatial uniformity higher than 95%, even for compact sizes. The optimization process involves a manual study of the trends for different shapes and the use of an optimization algorithm to further improve the performance of the freeform lightpipe.

  1. Overcoming the electroluminescence efficiency limitations of perovskite light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Cho, Himchan; Jeong, Su-Hun; Park, Min-Ho; Kim, Young-Hoon; Wolf, Christoph; Lee, Chang-Lyoul; Heo, Jin Hyuck; Sadhanala, Aditya; Myoung, NoSoung; Yoo, Seunghyup; Im, Sang Hyuk; Friend, Richard H.; Lee, Tae-Woo

    2015-12-01

    Organic-inorganic hybrid perovskites are emerging low-cost emitters with very high color purity, but their low luminescent efficiency is a critical drawback. We boosted the current efficiency (CE) of perovskite light-emitting diodes with a simple bilayer structure to 42.9 candela per ampere, similar to the CE of phosphorescent organic light-emitting diodes, with two modifications: We prevented the formation of metallic lead (Pb) atoms that cause strong exciton quenching through a small increase in methylammonium bromide (MABr) molar proportion, and we spatially confined the exciton in uniform MAPbBr3 nanograins (average diameter = 99.7 nanometers) formed by a nanocrystal pinning process and concomitant reduction of exciton diffusion length to 67 nanometers. These changes caused substantial increases in steady-state photoluminescence intensity and efficiency of MAPbBr3 nanograin layers.

  2. GaN-based photon-recycling green light-emitting diodes with vertical-conduction structure.

    PubMed

    Sheu, Jinn-Kong; Chen, Fu-Bang; Yen, Wei-Yu; Wang, Yen-Chin; Liu, Chun-Nan; Yeh, Yu-Hsiang; Lee, Ming-Lun

    2015-04-06

    A p-i-n structure with near-UV(n-UV) emitting InGaN/GaN multiple quantum well(MQW) structure stacked on a green unipolar InGaN/GaN MQW was epitaxially grown at the same sapphire substrate. Photon recycling green light-emitting diodes(LEDs) with vertical-conduction feature on silicon substrates were then fabricated by wafer bonding and laser lift-off techniques. The green InGaN/GaN QWs were pumped with n-UV light to reemit low-energy photons when the LEDs were electrically driven with a forward current. Efficiency droop is potentially insignificant compared with the direct green LEDs due to the increase of effective volume of active layer in the optically pumped green LEDs, i.e., light emitting no longer limited in the QWs nearest to the p-type region to cause severe Auger recombination and carrier overflow losses.

  3. The Switch from Low-Pressure Sodium to Light Emitting Diodes Does Not Affect Bat Activity at Street Lights

    PubMed Central

    Rowse, Elizabeth G.; Harris, Stephen; Jones, Gareth

    2016-01-01

    We used a before-after-control-impact paired design to examine the effects of a switch from low-pressure sodium (LPS) to light emitting diode (LED) street lights on bat activity at twelve sites across southern England. LED lights produce broad spectrum ‘white’ light compared to LPS street lights that emit narrow spectrum, orange light. These spectral differences could influence the abundance of insects at street lights and thereby the activity of the bats that prey on them. Most of the bats flying around the LPS lights were aerial-hawking species, and the species composition of bats remained the same after the switch-over to LED. We found that the switch-over from LPS to LED street lights did not affect the activity (number of bat passes), or the proportion of passes containing feeding buzzes, of those bat species typically found in close proximity to street lights in suburban environments in Britain. This is encouraging from a conservation perspective as many existing street lights are being, or have been, switched to LED before the ecological consequences have been assessed. However, lighting of all spectra studied to date generally has a negative impact on several slow-flying bat species, and LED lights are rarely frequented by these ‘light-intolerant’ bat species. PMID:27008274

  4. Printing Smart Designs of Light Emitting Devices with Maintained Textile Properties †

    PubMed Central

    Verboven, Inge; Stryckers, Jeroen; Mecnika, Viktorija; Vandevenne, Glen; Jose, Manoj

    2018-01-01

    To maintain typical textile properties, smart designs of light emitting devices are printed directly onto textile substrates. A first approach shows improved designs for alternating current powder electroluminescence (ACPEL) devices. A configuration with the following build-up, starting from the textile substrate, was applied using the screen printing technique: silver (10 µm)/barium titanate (10 µm)/zinc-oxide (10 µm) and poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (10 µm). Textile properties such as flexibility, drapability and air permeability are preserved by implementing a pixel-like design of the printed layers. Another route is the application of organic light emitting devices (OLEDs) fabricated out of following layers, also starting from the textile substrate: polyurethane or acrylate (10–20 µm) as smoothing layer/silver (200 nm)/poly(3,4-ethylenedioxythiophene)poly(styrenesulfonate) (35 nm)/super yellow (80 nm)/calcium/aluminum (12/17 nm). Their very thin nm-range layer thickness, preserving the flexibility and drapability of the substrate, and their low working voltage, makes these devices the possible future in light-emitting wearables. PMID:29438276

  5. 77 FR 75446 - Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant...

    Federal Register 2010, 2011, 2012, 2013, 2014

    2012-12-20

    ... INTERNATIONAL TRADE COMMISSION [Investigation No. 337-TA-784] Certain Light-Emitting Diodes and Products Containing the Same; Commission Determination To Grant the Joint Motion To Terminate the... sale within the United States after importation of certain light-emitting diodes and products...

  6. Green-light-emitting electroluminescent device based on a new cadmium complex

    NASA Astrophysics Data System (ADS)

    Kumar, Rahul; Srivastava, Ritu; Kumar, Akshay; Kamalasanan, M. N.; Singh, K.

    2010-06-01

    A new cadmium complex is synthesized to investigate its stability and applicability for a luminescent device. The as-prepared Cd(Bpy)q sample is characterized by Fourier-transformed infra-red spectroscopy (FTIR), thermal gravimetric analyzer (TGA) and photoluminescence (PL). The prepared sample shows excellent thermal stability up to 380 °C. A maximum is observed at 240 nm in absorption spectra which is attributed to the π-π* transition. An organic-light-emitting diode (OLED) has been fabricated using this material. The fundamental structures of the device exhibit ITO/α-NPD/Cd(Bpy)q/BCP/Alq3/LiF/Al. The electroluminescence (EL) device emits bright green light with maximum luminescence 1683 cd/m2 at 20 V.

  7. Light-emitting diode street lights reduce last-ditch evasive manoeuvres by moths to bat echolocation calls

    PubMed Central

    Wakefield, Andrew; Stone, Emma L.; Jones, Gareth; Harris, Stephen

    2015-01-01

    The light-emitting diode (LED) street light market is expanding globally, and it is important to understand how LED lights affect wildlife populations. We compared evasive flight responses of moths to bat echolocation calls experimentally under LED-lit and -unlit conditions. Significantly, fewer moths performed ‘powerdive’ flight manoeuvres in response to bat calls (feeding buzz sequences from Nyctalus spp.) under an LED street light than in the dark. LED street lights reduce the anti-predator behaviour of moths, shifting the balance in favour of their predators, aerial hawking bats. PMID:26361558

  8. Manipulating Refractive Index in Organic Light-Emitting Diodes.

    PubMed

    Salehi, Amin; Chen, Ying; Fu, Xiangyu; Peng, Cheng; So, Franky

    2018-03-21

    In a conventional organic light-emitting diode (OLED), only a fraction of light can escape to the glass substrate and air. Most radiation is lost to two major channels: waveguide modes and surface plasmon polaritons. It is known that reducing the refractive indices of the constituent layers in an OLED can enhance light extraction. Among all of the layers, the refractive index of the electron transport layer (ETL) has the largest impact on light extraction because it is the layer adjacent to the metallic cathode. Oblique angle deposition (OAD) provides a way to manipulate the refractive index of a thin film by creating an ordered columnar void structure. In this work, using OAD, the refractive index of tris(8-hydroxyquinoline)aluminum (Alq3) can be tuned from 1.75 to 1.45. With this low-index ETL deposited by OAD, the resulting phosphorescent OLED shows nearly 30% increase in light extraction efficiency.

  9. Demonstration Assessment of Light-Emitting Diode (LED) Post-Top Lighting at Central Park in New York City

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Myer, Michael; Goettel, Russell T.; Kinzey, Bruce R.

    2012-09-30

    A review of five post-top light-emitting diode (LED) pedestrian luminaires installed in New York City's Central Park for possible replacement to the existing metal halide post-top luminaire. This report reviews the energy savings potential and lighting delivered by the LED post-top luminaires.

  10. Electronic Two-Transition-Induced Enhancement of Emission Efficiency in Polymer Light-Emitting Diodes

    PubMed Central

    Chen, Ren-Ai; Wang, Cong; Li, Sheng; George, Thomas F.

    2013-01-01

    With the development of experimental techniques, effective injection and transportation of electrons is proven as a way to obtain polymer light-emitting diodes (PLEDs) with high quantum efficiency. This paper reveals a valid mechanism for the enhancement of quantum efficiency in PLEDs. When an external electric field is applied, the interaction between a negative polaron and triplet exciton leads to an electronic two-transition process, which induces the exciton to emit light and thus improve the emission efficiency of PLEDs. PMID:28809346

  11. A single blue nanorod light emitting diode.

    PubMed

    Hou, Y; Bai, J; Smith, R; Wang, T

    2016-05-20

    We report a light emitting diode (LED) consisting of a single InGaN/GaN nanorod fabricated by a cost-effective top-down approach from a standard LED wafer. The device demonstrates high performance with a reduced quantum confined Stark effect compared with a standard planar counterpart fabricated from the same wafer, confirmed by optical and electrical characterization. Current density as high as 5414 A cm(-2) is achieved without significant damage to the device due to the high internal quantum efficiency. The efficiency droop is mainly ascribed to Auger recombination, which was studied by an ABC model. Our work provides a potential method for fabricating compact light sources for advanced photonic integrated circuits without involving expensive or time-consuming fabrication facilities.

  12. Contrast-enhancement in organic light-emitting diodes.

    PubMed

    Wu, Zhaoxin; Wang, Liduo; Qiu, Yong

    2005-03-07

    A high-contrast organic light-emitting diode (OLED) structure is presented. Because of poor contrast of conventional OLED resulting from high reflective metal cathode, the hybrid cathode structure was developed for low reflectivity. It consists the semitransparent cathode layers, passivation layers and a thick light-absorbing film. By optical reflectivity measurement and OLED electrical characterization tests for both OLED with the hybrid cathode and conventional OLED, it was found that the spectrum reflectance of OLED with hybrid cathode is among 8%-12%, about eight times lower than the conventional one when the two types of devices have similar turn-on voltages and current-voltage characteristics. The hybrid cathode for the high-contrast OLED is easily fabricated and its optical reflectance is slightly dependent on wavelength.

  13. Flexible top-emitting OLEDs for lighting: bending limits

    NASA Astrophysics Data System (ADS)

    Schwamb, Philipp; Reusch, Thilo C.; Brabec, Christoph J.

    2013-09-01

    Flexible OLED light sources have great appeal due to new design options, being unbreakable and their low weight. Top-emitting OLED device architectures offer the broadest choice of substrate materials including metals which are robust, impermeable to humidity, and good thermal conductors making them promising candidates for flexible OLED device substrates. In this study, we investigate the bending limits of flexible top-emitting OLED lighting devices with transparent metal electrode and thin film encapsulation on a variety of both metal and plastic foils. The samples were subjected to concave and convex bending and inspected by different testing methods for the onset of breakdown for example visible defects and encapsulation failures. The critical failure modes were identified as rupture of the transparent thin metal top electrode and encapsulation for convex bending and buckling of the transparent metal top electrode for concave bending. We investigated influences from substrate material and thickness and top coating thickness. The substrate thickness is found to dominate bending limits as expected by neutral layer modeling. Coating shows strong improvements for all substrates. Bending radii <15mm are achieved for both convex and concave testing without damage to devices including their encapsulation.

  14. Warm-White-Light-Emitting Diode Based on a Dye-Loaded Metal-Organic Framework for Fast White-Light Communication.

    PubMed

    Wang, Zhiye; Wang, Zi; Lin, Bangjiang; Hu, XueFu; Wei, YunFeng; Zhang, Cankun; An, Bing; Wang, Cheng; Lin, Wenbin

    2017-10-11

    A dye@metal-organic framework (MOF) hybrid was used as a fluorophore in a white-light-emitting diode (WLED) for fast visible-light communication (VLC). The white light was generated from a combination of blue emission of the 9,10-dibenzoate anthracene (DBA) linkers and yellow emission of the encapsulated Rhodamine B molecules. The MOF structure not only prevents dye molecules from aggregation-induced quenching but also efficiently transfers energy to the dye for dual emission. This light-emitting material shows emission lifetimes of 1.8 and 5.3 ns for the blue and yellow components, respectively, which are significantly shorter than the 200 ns lifetime of Y 3 Al 5 O 12 :Ce 3+ in commercial WLEDs. The MOF-WLED device exhibited a modulating frequency of 3.6 MHz for VLC, six times that of commercial WLEDs.

  15. Tandem Organic Light-Emitting Diodes.

    PubMed

    Fung, Man-Keung; Li, Yan-Qing; Liao, Liang-Sheng

    2016-12-01

    A tandem organic light-emitting diode (OLED) is an organic optoelectronic device that has two or more electroluminescence (EL) units connected electrically in series with unique intermediate connectors within the device. Researchers have studied this new OLED architecture with growing interest and have found that the current efficiency of a tandem OLED containing N EL units (N > 1) should be N times that of a conventional OLED containing only a single EL unit. Therefore, this new architecture is potentially useful for constructing high-efficiency, high-luminance, and long-lifetime OLED displays and organic solid-state lighting sources. In a tandem OLED, the intermediate connector plays a crucial role in determining the effectiveness of the stacked EL units. The interfaces in the connector control the inner charge generation and charge injection into the adjacent EL units. Meanwhile, the transparency and the thickness of the connector affect the light output of the device. Therefore, the intermediate connector should be made to meet both the electrical and optical requirements for achieving optimal performance. Here, recent advances in the research of the tandem OLEDs is discussed, with the main focus on material selection and interface studies in the intermediate connectors, as well as the optical design of the tandem OLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  16. Enhancement of efficiencies for tandem green phosphorescent organic light-emitting devices with a p-type charge generation layer

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Yoo, Byung Soo; Jeon, Young Pyo; Lee, Dae Uk

    2014-10-15

    The operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the organic light-emitting device with a molybdenum trioxide layer. The maximum brightness of the tandem green phosphorescent organic light-emitting device at 21.9 V was 26,540 cd/m{sup 2}. The dominant peak of the electroluminescence spectra for the devices was related to the fac-tris(2-phenylpyridine) iridium emission. - Highlights: • Tandem OLEDs with CGL were fabricated to enhance their efficiency. • The operating voltage of the tandem OLED with a HAT-CN layer was improved by 3%. • The efficiency and brightnessmore » of the tandem OLED were 13.9 cd/A and 26,540 cd/m{sup 2}. • Efficiency of the OLED with a HAT-CN layer was lower than that with a MoO{sub 3} layer. - Abstract: Tandem green phosphorescent organic light-emitting devices with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile or a molybdenum trioxide charge generation layer were fabricated to enhance their efficiency. Current density–voltage curves showed that the operating voltage of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was improved by 3% over that of the corresponding organic light-emitting device with a molybdenum trioxide layer. The efficiency and the brightness of the tandem green phosphorescent organic light-emitting device were 13.9 cd/A and 26,540 cd/m{sup 2}, respectively. The current efficiency of the tandem green phosphorescent organic light-emitting device with a 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer was lower by 1.1 times compared to that of the corresponding organic light-emitting device with molybdenum trioxide layer due to the decreased charge generation and transport in the 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile layer resulting from triplet–triplet exciton annihilation.« less

  17. Improved heat dissipation in gallium nitride light-emitting diodes with embedded graphene oxide pattern.

    PubMed

    Han, Nam; Cuong, Tran Viet; Han, Min; Ryu, Beo Deul; Chandramohan, S; Park, Jong Bae; Kang, Ji Hye; Park, Young-Jae; Ko, Kang Bok; Kim, Hee Yun; Kim, Hyun Kyu; Ryu, Jae Hyoung; Katharria, Y S; Choi, Chel-Jong; Hong, Chang-Hee

    2013-01-01

    The future of solid-state lighting relies on how the performance parameters will be improved further for developing high-brightness light-emitting diodes. Eventually, heat removal is becoming a crucial issue because the requirement of high brightness necessitates high-operating current densities that would trigger more joule heating. Here we demonstrate that the embedded graphene oxide in a gallium nitride light-emitting diode alleviates the self-heating issues by virtue of its heat-spreading ability and reducing the thermal boundary resistance. The fabrication process involves the generation of scalable graphene oxide microscale patterns on a sapphire substrate, followed by its thermal reduction and epitaxial lateral overgrowth of gallium nitride in a metal-organic chemical vapour deposition system under one-step process. The device with embedded graphene oxide outperforms its conventional counterpart by emitting bright light with relatively low-junction temperature and thermal resistance. This facile strategy may enable integration of large-scale graphene into practical devices for effective heat removal.

  18. Resonant cavity light-emitting diodes based on dielectric passive cavity structures

    NASA Astrophysics Data System (ADS)

    Ledentsov, N.; Shchukin, V. A.; Kropp, J.-R.; Zschiedrich, L.; Schmidt, F.; Ledentsov, N. N.

    2017-02-01

    A novel design for high brightness planar technology light-emitting diodes (LEDs) and LED on-wafer arrays on absorbing substrates is proposed. The design integrates features of passive dielectric cavity deposited on top of an oxide- semiconductor distributed Bragg reflector (DBR), the p-n junction with a light emitting region is introduced into the top semiconductor λ/4 DBR period. A multilayer dielectric structure containing a cavity layer and dielectric DBRs is further processed by etching into a micrometer-scale pattern. An oxide-confined aperture is further amended for current and light confinement. We study the impact of the placement of the active region into the maximum or minimum of the optical field intensity and study an impact of the active region positioning on light extraction efficiency. We also study an etching profile composed of symmetric rings in the etched passive cavity over the light emitting area. The bottom semiconductor is an AlGaAs-AlAs multilayer DBR selectively oxidized with the conversion of the AlAs layers into AlOx to increase the stopband width preventing the light from entering the semiconductor substrate. The approach allows to achieve very high light extraction efficiency in a narrow vertical angle keeping the reasonable thermal and current conductivity properties. As an example, a micro-LED structure has been modeled with AlGaAs-AlAs or AlGaAs-AlOx DBRs and an active region based on InGaAlP quantum well(s) emitting in the orange spectral range at 610 nm. A passive dielectric SiO2 cavity is confined by dielectric Ta2O5/SiO2 and AlGaAs-AlOx DBRs. Cylindrically-symmetric structures with multiple ring patterns are modeled. It is demonstrated that the extraction coefficient of light to the air can be increased from 1.3% up to above 90% in a narrow vertical angle (full width at half maximum (FWHM) below 20°). For very small oxide-confined apertures 100nm the narrowing of the FWHM for light extraction can be reduced down to 5

  19. The Use of Light-Emitting Diodes (LEDs) as Green and Red/Far-Red Light Sources in Plant Physiology.

    ERIC Educational Resources Information Center

    Jackson, David L.; And Others

    1985-01-01

    The use of green, red, and far-red light-emitting diodes (LEDs) as light sources for plant physiological studies is outlined and evaluated. Indicates that LED lamps have the advantage over conventional light sources in that they are lightweight, low-cost, portable, easily constructed, and do not require color filters. (Author/DH)

  20. Low-picomolar limits of detection using high-power light-emitting diodes for fluorescence.

    PubMed

    de Jong, Ebbing P; Lucy, Charles A

    2006-05-01

    Fluorescence detectors are ever more frequently being used with light-emitting diodes (LEDs) as the light source. Technological advances in the solid-state lighting industry have produced LEDs which are also suitable tools in analytical measurements. LEDs are now available which deliver 700 mW of radiometric power. While this greater light power can increase the fluorescence signal, it is not trivial to make proper use of this light. This new generation of LEDs has a large emitting area and a highly divergent beam. This presents a classic problem in optics where one must choose between either a small focused light spot, or high light collection efficiency. We have selected for light collection efficiency, which yields a light spot somewhat larger than the emitting area of the LED. This light is focused onto a flow cell. Increasing the detector cell internal diameter (i.d.) produces gains in (sensitivity)3. However, since the detector cell i.d. is smaller than the LED spot size, scattering of excitation light towards the detector remains a significant source of background signal. This can be minimized through the use of spectral filters and spatial filters in the form of pinholes. The detector produced a limit of detection (LOD) of 3 pM, which is roughly three orders of magnitude lower than other reports of LED-based fluorescence detectors. Furthermore, this LOD comes within a factor of six of much more expensive laser-based fluorescence systems. This detector has been used to monitor a separation from a gel filtration column of fluorescently labeled BSA from residual labeling reagent. The LOD of fluorescently labeled BSA is 25 pM.

  1. Efficient Light Extraction from Organic Light-Emitting Diodes Using Plasmonic Scattering Layers

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rothberg, Lewis

    2012-11-30

    Our project addressed the DOE MYPP 2020 goal to improve light extraction from organic light-emitting diodes (OLEDs) to 75% (Core task 6.3). As noted in the 2010 MYPP, “the greatest opportunity for improvement is in the extraction of light from [OLED] panels”. There are many approaches to avoiding waveguiding limitations intrinsic to the planar OLED structure including use of textured substrates, microcavity designs and incorporating scattering layers into the device structure. We have chosen to pursue scattering layers since it addresses the largest source of loss which is waveguiding in the OLED itself. Scattering layers also have the potential tomore » be relatively robust to color, polarization and angular distributions. We note that this can be combined with textured or microlens decorated substrates to achieve additional enhancement.« less

  2. Dr. Harry Whelan With the Light Emitting Diode Probe

    NASA Technical Reports Server (NTRS)

    1999-01-01

    The red light from the Light Emitting Diode (LED) probe shines through the fingers of Dr. Harry Whelan, a pediatric neurologist at the Children's Hospital of Wisconsin in Milwaukee. Dr. Whelan uses the long waves of light from the LED surgical probe to activate special drugs that kill brain tumors. Laser light previously has been used for this type of surgery, but the LED light illuminates through all nearby tissues, reaching parts of tumors that shorter wavelengths of laser light carnot. The new probe is safer because the longer wavelengths of light are cooler than the shorter wavelengths of laser light, making the LED less likely to injure normal brain tissue near the tumor. Also, it can be used for hours at a time while still remaining cool to the touch. The probe was developed for photodynamic cancer therapy under a NASA Small Business Innovative Research Program grant. The program is part of NASA's Technology Transfer Department at the Marshall Space Flight Center.

  3. Can pulsed xenon ultraviolet light systems disinfect aerobic bacteria in the absence of manual disinfection?

    PubMed

    Jinadatha, Chetan; Villamaria, Frank C; Ganachari-Mallappa, Nagaraja; Brown, Donna S; Liao, I-Chia; Stock, Eileen M; Copeland, Laurel A; Zeber, John E

    2015-04-01

    Whereas pulsed xenon-based ultraviolet light no-touch disinfection systems are being increasingly used for room disinfection after patient discharge with manual cleaning, their effectiveness in the absence of manual disinfection has not been previously evaluated. Our study indicates that pulsed xenon-based ultraviolet light systems effectively reduce aerobic bacteria in the absence of manual disinfection. These data are important for hospitals planning to adopt this technology as adjunct to routine manual disinfection. Published by Elsevier Inc.

  4. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    NASA Astrophysics Data System (ADS)

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-02-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency.

  5. Organic light emitting device architecture for reducing the number of organic materials

    DOEpatents

    D'Andrade, Brian [Westampton, NJ; Esler, James [Levittown, PA

    2011-10-18

    An organic light emitting device is provided. The device includes an anode and a cathode. A first emissive layer is disposed between the anode and the cathode. The first emissive layer includes a first non-emitting organic material, which is an organometallic material present in the first emissive layer in a concentration of at least 50 wt %. The first emissive layer also includes a first emitting organic material. A second emissive layer is disposed between the first emissive layer and the cathode, preferably, in direct contact with the first emissive layer. The second emissive material includes a second non-emitting organic material and a second emitting organic material. The first and second non-emitting materials, and the first and second emitting materials, are all different materials. A first non-emissive layer is disposed between the first emissive layer and the anode, and in direct contact with the first emissive layer. The first non- emissive layer comprises the first non-emissive organic material.

  6. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOEpatents

    Sze, Robert C.; Quigley, Gerard P.

    1996-01-01

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source. A contamination-free VUV light source having a 225 cm.sup.2 emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm.sup.2 at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing.

  7. Large area, surface discharge pumped, vacuum ultraviolet light source

    DOEpatents

    Sze, R.C.; Quigley, G.P.

    1996-12-17

    Large area, surface discharge pumped, vacuum ultraviolet (VUV) light source is disclosed. A contamination-free VUV light source having a 225 cm{sup 2} emission area in the 240-340 nm region of the electromagnetic spectrum with an average output power in this band of about 2 J/cm{sup 2} at a wall-plug efficiency of approximately 5% is described. Only ceramics and metal parts are employed in this surface discharge source. Because of the contamination-free, high photon energy and flux, and short pulse characteristics of the source, it is suitable for semiconductor and flat panel display material processing. 3 figs.

  8. Fragmentation of mercury compounds under ultraviolet light irradiation

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Kokkonen, E.; Hautala, L.; Jänkälä, K.

    2015-08-21

    Ultraviolet light induced photofragmentation of mercury compounds is studied experimentally with electron energy resolved photoelectron-photoion coincidence techniques and theoretically with computational quantum chemical methods. A high resolution photoelectron spectrum using synchrotron radiation is presented. Fragmentation of the molecule is studied subsequent to ionization to the atomic-mercury-like d orbitals. State dependent fragmentation behaviour is presented and specific reactions for dissociation pathways are given. The fragmentation is found to differ distinctly in similar orbitals of different mercury compounds.

  9. Manufacturing polymer light emitting diode with high luminance efficiency by solution process

    NASA Astrophysics Data System (ADS)

    Kim, Miyoung; Jo, SongJin; Yang, Ho Chang; Yoon, Dang Mo; Kwon, Jae-Taek; Lee, Seung-Hyun; Choi, Ju Hwan; Lee, Bum-Joo; Shin, Jin-Koog

    2012-06-01

    While investigating polymer light emitting diodes (polymer-LEDs) fabricated by solution process, surface roughness influences electro-optical (E-O) characteristics. We expect that E-O characteristics such as luminance and power efficiency related to surface roughness and layer thickness of emitting layer with poly-9-Vinylcarbazole. In this study, we fabricated polymer organic light emitting diodes by solution process which guarantees easy, eco-friendly and low cost manufacturing for flexible display applications. In order to obtain high luminescence efficiency, E-O characteristics of these devices by varying parameters for printing process have been investigated. Therefore, we optimized process condition for polymer-LEDs by adjusting annealing temperatures of emission, thickness of emission layer showing efficiency (10.8 cd/A) at 10 mA/cm2. We also checked wavelength dependent electroluminescence spectrum in order to find the correlation between the variation of efficiency and the thickness of the layer.

  10. Simple single-emitting layer hybrid white organic light emitting with high color stability

    NASA Astrophysics Data System (ADS)

    Nguyen, C.; Lu, Z. H.

    2017-10-01

    Simultaneously achieving a high efficiency and color quality at luminance levels required for solid-state lighting has been difficult for white organic light emitting diodes (OLEDs). Single-emitting layer (SEL) white OLEDs, in particular, exhibit a significant tradeoff between efficiency and color stability. Furthermore, despite the simplicity of SEL white OLEDs being its main advantage, the reported device structures are often complicated by the use of multiple blocking layers. In this paper, we report a highly simplified three-layered white OLED that achieves a low turn-on voltage of 2.7 V, an external quantum efficiency of 18.9% and power efficiency of 30 lm/W at 1000 cd/cm2. This simple white OLED also shows good color quality with a color rendering index of 75, CIE coordinates (0.42, 0.46), and little color shifting at high luminance. The device consists of a SEL sandwiched between a hole transport layer and an electron transport layer. The SEL comprises a thermally activated delayer fluorescent molecule having dual functions as a blue emitter and as a host for other lower energy emitters. The improved color stability and efficiency in such a simple device structure is explained as due to the elimination of significant energy barriers at various organic-organic interfaces in the traditional devices having multiple blocking layers.

  11. Quantum-well-base heterojunction bipolar light-emitting transistor

    NASA Astrophysics Data System (ADS)

    Feng, M.; Holonyak, N.; Chan, R.

    2004-03-01

    This letter reports the enhanced radiative recombination realized by incorporating InGaAs quantum wells in the base layer of light-emitting InGaP/GaAs heterojunction bipolar transistors (LETs) operating in the common-emitter configuration. Two 50 Å In1-xGaxAs (x=85%) quantum wells (QWs) acting, in effect, as electron capture centers ("traps") are imbedded in the 300 Å GaAs base layer, thus improving (as a "collector" and recombination center) the light emission intensity compared to a similar LET structure without QWs in the base. Gigahertz operation of the QW LET with simultaneously amplified electrical output and an optical output with signal modulation is demonstrated.

  12. Formation of the thioester, N,S-diacetylcysteine, from acetaldehyde and N,N'-diacetylcystine in aqueous solution with ultraviolet light

    NASA Technical Reports Server (NTRS)

    Weber, A. L.

    1981-01-01

    The thioester, N,S-diacetylcysteine, is formed during the illumination of phosphate buffered (pH 7.0) aqueous solutions of acetaldehyde and N,N'-diacetylcystine with ultraviolet light. The yield of N,S-diacetylcysteine relative to N-acetylcysteine and unidentified products progressively increases as ultraviolet light below 239 nm, 253 nm and 281 nm is cut off with optical filters. When ultraviolet light below 320 nm is removed with an optical filter, there is no detectable reaction. Illumination of 0.025 M N,N'-diacetylcystine with 0.5 M and 1.0 M acetaldehyde with filtered ultraviolet light gives, respectively, 20% and 80% yields of N,S-diacetylcysteine. In the reaction with 1.0 M acetaldehyde, N-acetylcysteine forms early in the reaction and later decreases with its conversion to N,S-diacetylcysteine. The prebiotic significance of these reactions is discussed.

  13. Aggregation in organic light emitting diodes

    NASA Astrophysics Data System (ADS)

    Meyer, Abigail

    Organic light emitting diode (OLED) technology has great potential for becoming a solid state lighting source. However, there are inefficiencies in OLED devices that need to be understood. Since these inefficiencies occur on a nanometer scale there is a need for structural data on this length scale in three dimensions which has been unattainable until now. Local Electron Atom Probe (LEAP), a specific implementation of Atom Probe Tomography (APT), is used in this work to acquire morphology data in three dimensions on a nanometer scale with much better chemical resolution than is previously seen. Before analyzing LEAP data, simulations were used to investigate how detector efficiency, sample size and cluster size affect data analysis which is done using radial distribution functions (RDFs). Data is reconstructed using the LEAP software which provides mass and position data. Two samples were then analyzed, 3% DCM2 in C60 and 2% DCM2 in Alq3. Analysis of both samples indicated little to no clustering was present in this system.

  14. Recycled Thermal Energy from High Power Light Emitting Diode Light Source.

    PubMed

    Ji, Jae-Hoon; Jo, GaeHun; Ha, Jae-Geun; Koo, Sang-Mo; Kamiko, Masao; Hong, JunHee; Koh, Jung-Hyuk

    2018-09-01

    In this research, the recycled electrical energy from wasted thermal energy in high power Light Emitting Diode (LED) system will be investigated. The luminous efficiency of lights has been improved in recent years by employing the high power LED system, therefore energy efficiency was improved compared with that of typical lighting sources. To increase energy efficiency of high power LED system further, wasted thermal energy should be re-considered. Therefore, wasted thermal energy was collected and re-used them as electrical energy. The increased electrical efficiency of high power LED devices was accomplished by considering the recycled heat energy, which is wasted thermal energy from the LED. In this work, increased electrical efficiency will be considered and investigated by employing the high power LED system, which has high thermal loss during the operating time. For this research, well designed thermoelement with heat radiation system was employed to enhance the collecting thermal energy from the LED system, and then convert it as recycled electrical energy.

  15. Hole trap formation in polymer light-emitting diodes under current stress

    NASA Astrophysics Data System (ADS)

    Niu, Quan; Rohloff, Roland; Wetzelaer, Gert-Jan A. H.; Blom, Paul W. M.; Crǎciun, N. Irina

    2018-06-01

    Polymer light-emitting diodes (PLEDs) are attractive for use in large-area displays and lighting panels, but their limited stability under current stress impedes commercialization. In spite of large efforts over the last two decades a fundamental understanding of the degradation mechanisms has not been accomplished. Here we demonstrate that the voltage drift of a PLED driven at constant current is caused by the formation of hole traps, which leads to additional non-radiative recombination between free electrons and trapped holes. The observed trap formation rate is consistent with exciton-free hole interactions as the main mechanism behind PLED degradation, enabling us to unify the degradation behaviour of various poly(p-phenylene) derivatives. The knowledge that hole trap formation is the cause of PLED degradation means that we can suppress the negative effect of hole traps on voltage and efficiency by blending the light-emitting polymer with a large-bandgap semiconductor. Owing to trap-dilution these blended PLEDs show unprecedented stability.

  16. Measurement of the water content in oil and oil products using IR light-emitting diode-photodiode optrons

    NASA Astrophysics Data System (ADS)

    Bogdanovich, M. V.; Kabanau, D. M.; Lebiadok, Y. V.; Shpak, P. V.; Ryabtsev, A. G.; Ryabtsev, G. I.; Shchemelev, M. A.; Andreev, I. A.; Kunitsyna, E. V.; Ivanov, E. V.; Yakovlev, Yu. P.

    2017-02-01

    The feasibility of using light-emitting devices, the radiation spectrum of which has maxima at wavelengths of 1.7, 1.9, and 2.2 μm for determining the water concentration in oil and oil products (gasoline, kerosene, diesel fuel) has been demonstrated. It has been found that the measurement error can be lowered if (i) the temperature of the light-emitting diode is maintained accurate to 0.5-1.0°C, (ii) by using a cell through which a permanently stirred analyte is pumped, and (iii) by selecting the repetition rate of radiation pulses from the light-emitting diodes according to the averaging time. A meter of water content in oil and oil products has been developed that is built around IR light-emitting device-photodiode optrons. This device provides water content on-line monitoring accurate to 1.5%.

  17. Nanobeam Photonic Crystal Cavity Light-Emitting Diodes

    DTIC Science & Technology

    2011-01-01

    Nanobeam photonic crystal cavity light-emitting diodes Gary Shambat,1,a) Bryan Ellis,1 Jan Petykiewicz,1 Marie A. Mayer,2 Tomas Sarmiento ,1 James...J. H. Ryou, P. B. Deotare, R. Dupuis, and M. Loncar, Appl. Phys. Lett. 97, 051104 (2010). 5Y. Gong, B. Ellis, G. Shambat, T. Sarmiento , J. S. Harris...F. Karouta, S. He, and R. W. van der Heijden, Appl. Phys. Lett. 97, 151105 (2010). 9B. Ellis, M. A. Mayer, G. Shambat, T. Sarmiento , J. Harris, E. E

  18. Ordered polymer nanofibers enhance output brightness in bilayer light-emitting field-effect transistors.

    PubMed

    Hsu, Ben B Y; Seifter, Jason; Takacs, Christopher J; Zhong, Chengmei; Tseng, Hsin-Rong; Samuel, Ifor D W; Namdas, Ebinazar B; Bazan, Guillermo C; Huang, Fei; Cao, Yong; Heeger, Alan J

    2013-03-26

    Polymer light emitting field effect transistors are a class of light emitting devices that reveal interesting device physics. Device performance can be directly correlated to the most fundamental polymer science. Control over surface properties of the transistor dielectric can dramatically change the polymer morphology, introducing ordered phase. Electronic properties such as carrier mobility and injection efficiency on the interface can be promoted by ordered nanofibers in the polymer. Moreover, by controlling space charge in the polymer interface, the recombination zone can be spatially extended and thereby enhance the optical output.

  19. Improvement in lifetime of green organic light-emitting device

    NASA Astrophysics Data System (ADS)

    Ki, Hyun Chul; Kim, Seon Hoon; Kim, Doo Gun; Kim, Hyun Jin; Ko, Hang Ju; Han, Myung-Soo; Kim, Hwe Jong; Hong, Kyung Jin

    2010-02-01

    We have proposed a novel encapsulation method with simple process in comparison with conventional encapsulation technique. Here, the encapsulation film of silicon dioxide is steady for external environment because this can be designed to cover the emitting organic material from air. Silicon dioxide of 220 nm was deposited by plasma enhanced chemical vapor deposition and etched by reactive ion etching system. Then, Alq3 was used as a material to emitting layer in the green (organic light emitting device) OLED and TPD in the hole transportation layer was used for the harmonious transportation of hole. Luminance was measured with 40 hour intervals at the air-exposed condition. After 400, 1,000, 1,600, and 2,000 hours, luminance of green OLED were 7,366, 7,200, 6,210, and 5,100 cd/m2, respectively. Luminance of green OLED doesn't decrease until 2,000 hours. As a results, proposed encapsulation technique can increase the life time of green OLED.

  20. Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Rogers, John A.; Nuzzo, Ralph; Kim, Hoon-sik

    Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

  1. Printed assemblies of ultrathin, microscale inorganic light emitting diodes for deformable and semitransparent displays

    DOEpatents

    Rogers, John A; Nuzzo, Ralph; Kim, Hoon-sik; Brueckner, Eric; Park, Sang Il; Kim, Rak Hwan

    2014-10-21

    Described herein are printable structures and methods for making, assembling and arranging electronic devices. A number of the methods described herein are useful for assembling electronic devices where one or more device components are embedded in a polymer which is patterned during the embedding process with trenches for electrical interconnects between device components. Some methods described herein are useful for assembling electronic devices by printing methods, such as by dry transfer contact printing methods. Also described herein are GaN light emitting diodes and methods for making and arranging GaN light emitting diodes, for example for display or lighting systems.

  2. Highly efficient phosphorescence from organic light-emitting devices with an exciton-block layer

    NASA Astrophysics Data System (ADS)

    Ikai, Masamichi; Tokito, Shizuo; Sakamoto, Youichi; Suzuki, Toshiyasu; Taga, Yasunori

    2001-07-01

    One of the keys to highly efficient phosphorescent emission in organic light-emitting devices is to confine triplet excitons generated within the emitting layer. We employ "starburst" perfluorinated phenylenes (C60F42) as a both hole- and exciton-block layer, and a hole-transport material 4,4',4″-tri(N-carbazolyl) triphenylamine as a host for the phosphorescent dopant dye in the emitting layer. A maximum external quantum efficiency reaches to 19.2%, and keeps over 15% even at high current densities of 10-20 mA/cm2, providing several times the brightness of fluorescent tubes for lighting. The onset voltage of the electroluminescence is as low as 2.4 V and the peak power efficiency is 70-72 lm/W, promising for low-power display devices.

  3. Fish scale terrace GaInN/GaN light-emitting diodes with enhanced light extraction

    NASA Astrophysics Data System (ADS)

    Stark, Christoph J. M.; Detchprohm, Theeradetch; Zhao, Liang; Paskova, Tanya; Preble, Edward A.; Wetzel, Christian

    2012-12-01

    Non-planar GaInN/GaN light-emitting diodes were epitaxially grown to exhibit steps for enhanced light emission. By means of a large off-cut of the epitaxial growth plane from the c-plane (0.06° to 2.24°), surface morphologies of steps and inclined terraces that resemble fish scale patterns could controllably be achieved. These patterns penetrate the active region without deteriorating the electrical device performance. We find conditions leading to a large increase in light-output power over the virtually on-axis device and over planar sapphire references. The process is found suitable to enhance light extraction even without post-growth processing.

  4. Phosphor-free, white-light LED under alternating-current operation.

    PubMed

    Yao, Yu-Feng; Chen, Hao-Tsung; Su, Chia-Ying; Hsieh, Chieh; Lin, Chun-Han; Kiang, Yean-Woei; Yang, C C

    2014-11-15

    A light-emitting diode structure, consisting of a p-GaN layer, a CdZnO/ZnO quantum-well (QW) structure, a high-temperature-grown ZnO layer, and a GaZnO layer, is fabricated. Under forward bias, the device effectively emits green-yellow light, from the QW structure, at the rim of device mesa. Under reverse bias, electrons in the valence band of the p-GaN layer move into the conduction band of the GaZnO layer, through a QW-state-assisted tunneling process, to recombine with the injected holes in the GaZnO layer, for emitting yellow-red and shallow ultraviolet light over the entire mesa area. Also, carrier recombination in the p-GaN layer produces blue light. By properly designing the thickness of the high-temperature grown ZnO layer, the emission intensity under forward bias can be controlled such that, under alternating-current operation at 60 Hz, the spatial and spectral mixtures of the emitted lights of complementary colors, under forward and reverse biases, result in white light generation based on persistence of vision.

  5. Lithium hydride doped intermediate connector for high-efficiency and long-term stable tandem organic light-emitting diodes.

    PubMed

    Ding, Lei; Tang, Xun; Xu, Mei-Feng; Shi, Xiao-Bo; Wang, Zhao-Kui; Liao, Liang-Sheng

    2014-10-22

    Lithium hydride (LiH) is employed as a novel n-dopant in the intermediate connector for tandem organic light-emitting diodes (OLEDs) because of its easy coevaporation with other electron transporting materials. The tandem OLEDs with two and three electroluminescent (EL) units connected by a combination of LiH doped 8-hydroxyquinoline aluminum (Alq3) and 1,4,5,8,9,11-hexaazatriphenylene-hexacarbonitrile (HAT-CN) demonstrate approximately 2-fold and 3-fold enhancement in current efficiency, respectively. In addition, no extra voltage drop across the intermediate connector is observed. Particularly, the lifetime (T75%) in the tandem OLED with two and three EL units is substantially improved by 3.8 times and 7.4 times, respectively. The doping effect of LiH into Alq3, the charge injection, and transport characteristics of LiH-doped Alq3 are further investigated by ultraviolet photoelectron spectroscopy (UPS) and X-ray photoemission spectroscopy (XPS).

  6. Optical Analysis of Power Distribution in Top-Emitting Organic Light Emitting Diodes Integrated with Nanolens Array Using Finite Difference Time Domain.

    PubMed

    Han, Kyung-Hoon; Park, Young-Sam; Cho, Doo-Hee; Han, Yoonjay; Lee, Jonghee; Yu, Byounggon; Cho, Nam Sung; Lee, Jeong-Ik; Kim, Jang-Joo

    2018-06-06

    Recently, we have addressed that a formation mechanism of a nanolens array (NLA) fabricated by using a maskless vacuum deposition is explained as the increase in surface tension of organic molecules induced by their crystallization. Here, as another research using finite difference time domain simulations, not electric field intensities but transmitted energies of electromagnetic waves inside and outside top-emitting blue organic light-emitting diodes (TOLEDs), without and with NLAs, are obtained, to easily grasp the effect of NLA formation on the light extraction of TOLEDs. Interestingly, the calculations show that NLA acts as an efficient light extraction structure. With NLA, larger transmitted energies in the direction from emitting layer to air are observed, indicating that NLAs send more light to air otherwise trapped in the devices by reducing the losses by waveguide and absorption. This is more significant for higher refractive index of NLA. Simulation and measurement results are consistent. A successful increase in both light extraction efficiency and color stability of blue TOLEDs, rarely reported before, is accomplished by introducing the highly process-compatible NLA technology using the one-step dry process. Blue TOLEDs integrated with a N, N'-di(1-naphthyl)- N, N'-diphenyl-(1,1'-biphenyl)-4,4'-diamine NLA with a refractive index of 1.8 show a 1.55-times-higher light extraction efficiency, compared to those without it. In addition, viewing angle characteristics are enhanced and image blurring is reduced, indicating that the manufacturer-adaptable technology satisfies the requirements of highly efficient and color-stable top-emission displays.

  7. Low Level Light Therapy with Light-Emitting Diodes for the Aging Face.

    PubMed

    Calderhead, R Glen; Vasily, David B

    2016-07-01

    Low level light therapy (LLLT) with light-emitting diodes (LEDs) is emerging from the mists of black magic as a solid medico-scientific modality, with a substantial buildup of corroborative bodies of evidence for its efficacy and elucidation of the modes of action. Reports are appearing from many different specialties; however, of particular interest to plastic surgeons treating the aging face is the proven action of LED-LLLT on skin cells in both the epidermis and dermis and enhanced blood flow. Thus, LED-LLLT is a safe and effective stand-alone therapy for patients who are prepared to wait until the final effect is perceived. Copyright © 2016 Elsevier Inc. All rights reserved.

  8. COMPARATIVE TOXICITY OF FLUORANTHENE TO FRESHWATER AND SALTWATER SPECIES UNDER FLUORESCENT AND ULTRAVIOLET LIGHT

    EPA Science Inventory

    The acute and chronic toxicity of fluoranthene was determined for a diverse group of freshwater and saltwater species under both standard laboratory fluorescent light and ultraviolet (UV) light test conditions. Acute tests with 21 species demonstrated that fluoranthene was not le...

  9. Operation of AC Adapters Visualized Using Light-Emitting Diodes

    ERIC Educational Resources Information Center

    Regester, Jeffrey

    2016-01-01

    A bridge rectifier is a diamond-shaped configuration of diodes that serves to convert alternating current(AC) into direct current (DC). In our world of AC outlets and DC electronics, they are ubiquitous. Of course, most bridge rectifiers are built with regular diodes, not the light-emitting variety, because LEDs have a number of disadvantages. For…

  10. Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes.

    PubMed

    Ling, Yichuan; Tian, Yu; Wang, Xi; Wang, Jamie C; Knox, Javon M; Perez-Orive, Fernando; Du, Yijun; Tan, Lei; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

    2016-10-01

    Highly bright light-emitting diodes based on solution-processed all-inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m -2 and 4%: a new benchmark of device performance for all-inorganic PeLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

  11. Light emitting diode with porous SiC substrate and method for fabricating

    DOEpatents

    Li, Ting; Ibbetson, James; Keller, Bernd

    2005-12-06

    A method and apparatus for forming a porous layer on the surface of a semiconductor material wherein an electrolyte is provided and is placed in contact with one or more surfaces of a layer of semiconductor material. The electrolyte is heated and a bias is introduced across said electrolyte and the semiconductor material causing a current to flow between the electrolyte and the semiconductor material. The current forms a porous layer on the one or more surfaces of the semiconductor material in contact with the electrolyte. The semiconductor material with its porous layer can serve as a substrate for a light emitter. A semiconductor emission region can be formed on the substrate. The emission region is capable of emitting light omnidirectionally in response to a bias, with the porous layer enhancing extraction of the emitting region light passing through the substrate.

  12. In situ characterization of the oxidative degradation of a polymeric light emitting device

    NASA Astrophysics Data System (ADS)

    Cumpston, B. H.; Parker, I. D.; Jensen, K. F.

    1997-04-01

    Light-emitting devices with polymeric emissive layers have great promise for the production of large-area, lightweight, flexible color displays, but short lifetimes currently limit applications. We address mechanisms of bulk polymer degradation in these devices and show through in situ Fourier transform infrared characterization of working light-emitting devices with active layers of poly[2-methoxy,5-(2'-ethyl-hexoxy)-1,4-phenylene vinylene] that oxygen is responsible for the degradation of the polymer film. A mechanism is given based on the formation of singlet oxygen from oxygen impurities in the film via energy transfer from a nonradiative exciton. Fourier transform infrared and x-ray photoelectron spectroscopy results are consistent with the mechanism, involving singlet oxygen attack followed by free radical processes. We further show that oxygen readily diffuses into the active polymer layer, changing the electrical characteristics of the film even at low concentrations. Thus, polyphenylene-vinylene-based light-emitting devices will self-destruct during operation if fabricated without special attention to eliminating oxygen contamination during fabrication and device operation.

  13. Electroformed silicon nitride based light emitting memory device

    NASA Astrophysics Data System (ADS)

    Anutgan, Tamila; Anutgan, Mustafa; Atilgan, Ismail; Katircioglu, Bayram

    2017-07-01

    The resistive memory switching effect of an electroformed nanocrystal silicon nitride thin film light emitting diode (LED) is demonstrated. For this purpose, current-voltage (I-V) characteristics of the diode were systematically scanned, paying particular attention to the sequence of the measurements. It was found that when the voltage polarity was changed from reverse to forward, the previously measured reverse I-V behavior was remembered until some critical forward bias voltage. Beyond this critical voltage, the I-V curve returns to its original state instantaneously, and light emission switches from the OFF state to the ON state. The kinetics of this switching mechanism was studied for different forward bias stresses by measuring the corresponding time at which the switching occurs. Finally, the switching of resistance and light emission states was discussed via energy band structure of the electroformed LED.

  14. Light-extraction efficiency and forward voltage in GaN-based light-emitting diodes with different patterns of V-shaped pits

    NASA Astrophysics Data System (ADS)

    Wang, Min-Shuai; Huang, Xiao-Jing

    2013-08-01

    We present a new method of making a textured V-pit surface for improving the light extraction efficiency in GaN-based light-emitting diodes and compare it with the usual low-temperature method for p-GaN V-pits. Three types of GaN-based light-emitting diodes (LEDs) with surface V-pits in different densities and regions were grown by metal—organic chemical vapor deposition. We achieved the highest output power and lowest forward voltage values with the p-InGaN V-pit LED. The V-pits enhanced the light output power values by 1.45 times the values of the conventional LED owing to an enhancement of the light scattering probability and an effective reduction of Mg-acceptor activation energy. Moreover, this new technique effectively solved the higher forward voltage problem of the usual V-pit LED.

  15. Multiple night-time light-emitting diode lighting strategies impact grassland invertebrate assemblages.

    PubMed

    Davies, Thomas W; Bennie, Jonathan; Cruse, Dave; Blumgart, Dan; Inger, Richard; Gaston, Kevin J

    2017-07-01

    White light-emitting diodes (LEDs) are rapidly replacing conventional outdoor lighting technologies around the world. Despite rising concerns over their impact on the environment and human health, the flexibility of LEDs has been advocated as a means of mitigating the ecological impacts of globally widespread outdoor night-time lighting through spectral manipulation, dimming and switching lights off during periods of low demand. We conducted a three-year field experiment in which each of these lighting strategies was simulated in a previously artificial light naïve grassland ecosystem. White LEDs both increased the total abundance and changed the assemblage composition of adult spiders and beetles. Dimming LEDs by 50% or manipulating their spectra to reduce ecologically damaging wavelengths partially reduced the number of commoner species affected from seven to four. A combination of dimming by 50% and switching lights off between midnight and 04:00 am showed the most promise for reducing the ecological costs of LEDs, but the abundances of two otherwise common species were still affected. The environmental consequences of using alternative lighting technologies are increasingly well established. These results suggest that while management strategies using LEDs can be an effective means of reducing the number of taxa affected, averting the ecological impacts of night-time lighting may ultimately require avoiding its use altogether. © 2017 John Wiley & Sons Ltd.

  16. Interpretation of OAO-2 ultraviolet light curves of beta Doradus

    NASA Technical Reports Server (NTRS)

    Hutchinson, J. L.; Lillie, C. F.; Hill, S. J.

    1975-01-01

    Middle-ultraviolet light curves of beta Doradus, obtained by OAO-2, are presented along with other evidence indicating that the small additional bumps observed on the rising branches of these curves have their origin in shock-wave phenomena in the upper atmosphere of this classical Cepheid. A simple piston-driven spherical hydrodynamic model of the atmosphere is developed to explain the bumps, and the calculations are compared with observations. The model is found to be consistent with the shapes of the light curves as well as with measurements of the H-alpha radial velocities.

  17. Bactericidal effects of a high-power, red light-emitting diode on two periodontopathic bacteria in antimicrobial photodynamic therapy in vitro.

    PubMed

    Umeda, Makoto; Tsuno, Akiko; Okagami, Yoshihide; Tsuchiya, Fumito; Izumi, Yuichi; Ishikawa, Isao

    2011-11-01

    Light-emitting diodes have been investigated as new light activators for photodynamic therapy. We investigated the bactericidal effects of high-power, red light-emitting diodes on two periodontopathic bacteria in vitro.   A light-emitting diode (intensity: 1100 mW/cm(2) , peak wavelength: 650 nm) was used to irradiate a bacterial solution for either 10 or 20 s. Bacterial solutions (Porphyromonas gingivalis or Aggregatibacter actinomycetemcomitans) at a concentration of 2.5 × 10(6) c.f.u./mL were mixed with an equal volume of either methylene blue or toluidine blue O (0-20 μg/mL) and added to titer plate wells. The plate wells were irradiated with red light-emitting diode light from a distance of 22 or 40 mm. The contents were diluted, and 50 μL was smeared onto blood agar plates. After 1 week of culturing, bacterial c.f.u. were counted.   The light-emitting diode energy density was estimated to be approximately 4 and 8 J/cm(2) after 10 and 20 s of irradiation, respectively. Red light-emitting diode irradiation for 10 s from a distance of 22 mm, combined with methylene blue at concentrations >10 μg/mL, completely killed Porphyromonas gingivalis and Aggregatibacter actinomycetemcomitans.   High-power, red light-emitting diode irradiation with a low concentration of dye showed effective bactericidal effects against two periodontopathic bacteria. © 2011 Blackwell Publishing Asia Pty Ltd.

  18. Stacking multiple connecting functional materials in tandem organic light-emitting diodes

    PubMed Central

    Zhang, Tao; Wang, Deng-Ke; Jiang, Nan; Lu, Zheng-Hong

    2017-01-01

    Tandem device is an important architecture in fabricating high performance organic light-emitting diodes and organic photovoltaic cells. The key element in making a high performance tandem device is the connecting materials stack, which plays an important role in electric field distribution, charge generation and charge injection. For a tandem organic light-emitting diode (OLED) with a simple Liq/Al/MoO3 stack, we discovered that there is a significant current lateral spreading causing light emission over an extremely large area outside the OLED pixel when the Al thickness exceeds 2 nm. This spread light emission, caused by an inductive electric field over one of the device unit, limits one’s ability to fabricate high performance tandem devices. To resolve this issue, a new connecting materials stack with a C60 fullerene buffer layer is reported. This new structure permits optimization of the Al metal layer in the connecting stack and thus enables us to fabricate an efficient tandem OLED having a high 155.6 cd/A current efficiency and a low roll-off (or droop) in current efficiency. PMID:28225028

  19. Method for generating extreme ultraviolet with mather-type plasma accelerators for use in Extreme Ultraviolet Lithography

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Hassanein, Ahmed; Konkashbaev, Isak

    A device and method for generating extremely short-wave ultraviolet electromagnetic wave uses two intersecting plasma beams generated by two plasma accelerators. The intersection of the two plasma beams emits electromagnetic radiation and in particular radiation in the extreme ultraviolet wavelength. In the preferred orientation two axially aligned counter streaming plasmas collide to produce an intense source of electromagnetic radiation at the 13.5 nm wavelength. The Mather type plasma accelerators can utilize tin, or lithium covered electrodes. Tin, lithium or xenon can be used as the photon emitting gas source.

  20. Electroluminescence property of organic light emitting diode (OLED)

    DOE Office of Scientific and Technical Information (OSTI.GOV)

    Özdemir, Orhan; Kavak, Pelin; Saatci, A. Evrim

    2013-12-16

    Transport properties of electrons and holes were investigated not only in a anthracene-containing poly(p-phenylene-ethynylene)- alt - poly(p-phenylene-vinylene) (PPE-PPV) polymer (AnE-PVstat) light emitting diodes (OLED) but also in an ITO/Ag/polymer/Ag electron and ITO/PEDOT:PSS/polymer/Au hole only devices. Mobility of injected carriers followed the Poole-Frenkel type conduction mechanism and distinguished in the frequency range due to the difference of transit times in admittance measurement. Beginning of light output took place at the turn-on voltage (or flat band voltage), 1.8 V, which was the difference of energy band gap of polymer and two barrier offsets between metals and polymer.