ZnO Quantum Dot Decorated Zn2SnO4 Nanowire Heterojunction Photodetectors with Drastic Performance Enhancement and Flexible Ultraviolet Image Sensors.

PubMed

Li, Ludong; Gu, Leilei; Lou, Zheng; Fan, Zhiyong; Shen, Guozhen

2017-04-25

Here we report the fabrication of high-performance ultraviolet photodetectors based on a heterojunction device structure in which ZnO quantum dots were used to decorate Zn 2 SnO 4 nanowires. Systematic investigations have shown their ultrahigh light-to-dark current ratio (up to 6.8 × 10 4 ), specific detectivity (up to 9.0 × 10 17 Jones), photoconductive gain (up to 1.1 × 10 7 ), fast response, and excellent stability. Compared with a pristine Zn 2 SnO 4 nanowire, a quantum dot decorated nanowire demonstrated about 10 times higher photocurrent and responsivity. Device physics modeling showed that their high performance originates from the rational energy band engineering, which allows efficient separation of electron-hole pairs at the interfaces between ZnO quantum dots and a Zn 2 SnO 4 nanowire. As a result of band engineering, holes migrate to ZnO quantum dots, which increases electron concentration and lifetime in the nanowire conduction channel, leading to significantly improved photoresponse. The enhancement mechanism found in this work can also be used to guide the design of high-performance photodetectors based on other nanomaterials. Furthermore, flexible ultraviolet photodetectors were fabricated and integrated into a 10 × 10 device array, which constitutes a high-performance flexible ultraviolet image sensor. These intriguing results suggest that the band alignment engineering on nanowires can be rationally achieved using compound semiconductor quantum dots. This can lead to largely improved device performance. Particularly for ZnO quantum dot decorated Zn 2 SnO 4 nanowires, these decorated nanowires may find broad applications in future flexible and wearable electronics.

GaN ultraviolet p-i-n photodetectors with enhanced deep ultraviolet quantum efficiency

NASA Astrophysics Data System (ADS)

Wang, Guosheng; Xie, Feng; Wang, Jun; Guo, Jin

2017-10-01

GaN ultraviolet (UV) p-i-n photodetectors (PDs) with a thin p-AlGaN/GaN contact layer are designed and fabricated. The PD exhibits a low dark current density of˜7 nA/cm2 under -5 V, and a zero-bias peak responsivity of ˜0.16 A/W at 360 nm, which corresponds to a maximum quantum efficiency of 55%. It is found that, in the wavelength range between 250 and 365 nm, the PD with thin p-AlGaN/GaN contact layer exhibits enhanced quantum efficiency especially in a deep-UV wavelength range, than that of the control PD with conventional thin p-GaN contact layer. The improved quantum efficiency of the PD with thin p-AlGaN/GaN contact layer in the deep-UV wavelength range is mainly attributed to minority carrier reflecting properties of thin p-AlGaN/GaN heterojunction which could reduce the surface recombination loss of photon-generated carriers and improve light current collection efficiency.

Narrowband ultraviolet photodetector based on MgZnO and NPB heterojunction.

PubMed

Hu, Zuofu; Li, Zhenjun; Zhu, Lu; Liu, Fengjuan; Lv, Yanwu; Zhang, Xiqing; Wang, Yongsheng

2012-08-01

An ultraviolet photodetector was fabricated based on Mg0.07Zn0.93O heterojunction. N, N'-bis (naphthalen-1-y1)-N, N'-bis(pheny) benzidine was selected as the hole transporting layer. I-V characteristic curves of the device were measured in the dark and under the illumination of 340 nm UV light with density of 1.33 mW/cm2. The device showed a low dark current of about 3×10(-10) A and a high photo-dark current ratio of 1×10(5) at -2 V bias. A narrowband photoresponse was observed from 300 to 400 nm and centered at 340 nm with a full width at half-maximum of only 30 nm. The maximum peak response is at 340 nm, which is 0.192 A/W at the bias of -1 V.

Heterostructured ZnS/InP nanowires for rigid/flexible ultraviolet photodetectors with enhanced performance.

PubMed

Zhang, Kai; Ding, Jia; Lou, Zheng; Chai, Ruiqing; Zhong, Mianzeng; Shen, Guozhen

2017-10-19

Heterostructured ZnS/InP nanowires, composed of single-crystalline ZnS nanowires coated with a layer of InP shell, were synthesized via a one-step chemical vapor deposition process. As-grown heterostructured ZnS/InP nanowires exhibited an ultrahigh I on /I off ratio of 4.91 × 10 3 , a high photoconductive gain of 1.10 × 10 3 , a high detectivity of 1.65 × 10 13 Jones and high response speed even in the case of very weak ultraviolet light illumination (1.87 μW cm -2 ). The values are much higher than those of previously reported bare ZnS nanowires owing to the formation of core/shell heterostructures. Flexible ultraviolet photodetectors were also fabricated with the heterostructured ZnS/InP nanowires, which showed excellent mechanical flexibility, electrical stability and folding endurance besides excellent photoresponse properties. The results elucidated that the heterostructured ZnS/InP nanowires could find good applications in next generation flexible optoelectronic devices.

Enhanced Photocurrent in BiFeO3 Materials by Coupling Temperature and Thermo-Phototronic Effects for Self-Powered Ultraviolet Photodetector System.

PubMed

Qi, Jia; Ma, Nan; Ma, Xiaochen; Adelung, Rainer; Yang, Ya

2018-04-25

Ferroelectric materials can be utilized for fabricating photodetectors because of the photovoltaic effect. Enhancing the photovoltaic performance of ferroelectric materials is still a challenge. Here, a self-powered ultraviolet (UV) photodetector is designed based on the ferroelectric BiFeO 3 (BFO) material, exhibiting a high current/voltage response to 365 nm light in heating/cooling states. The photovoltaic performance of the BFO-based device can be well modulated by applying different temperature variations, where the output current and voltage can be enhanced by 60 and 75% in heating and cooling states, respectively. The enhancement mechanism of the photocurrent is associated with both temperature effect and thermo-phototronic effect in the photovoltaic process. Moreover, a 4 × 4 matrix photodetector array has been designed for detecting the 365 nm light distribution in the cooling state by utilizing photovoltage signals. This study clarifies the role of the temperature effect and the thermo-phototronic effect in the photovoltaic process of the BFO material and provides a feasible route for pushing forward practical applications of self-powered UV photodetectors.

High performance organic ultraviolet photodetectors based on m-MTDATA

NASA Astrophysics Data System (ADS)

Zhao, Zhongli; Bai, Xiaofeng; Shang, Yubin; Yang, Jikai; Li, Baozeng; Song, De

2018-02-01

We demonstrate highly efficient organic ultraviolet photodetectors using 4,4',4'' -tris[3-methyl-pheny(phenyl) amino] triphenylamine (m-MTDATA) and aluminum Tris(8-Hydroxyquinolinate) Synonym Alq3). The optimized photodetector delivers a photocurrent of 1.40 mA/cm2 at10 V, corresponding to a response of 127 mA/W under an illumination of 375 nm UV light irradiation with an intensity of 10.5 mW/cm2 and a detectivity of 2.15×1011 cm Hz1/2 /W. The high response is attributed to the larger band offset at m-MTDATA/ Alq3 heterojunction, the suppression of radiative decay of m-MTDATA and efficient electron transfer from m-MTDATA to Alq3. The working mechanism of harvesting high performance is also discussed in detail.

Tailored Electrospinning of WO₃ Nanobelts as Efficient Ultraviolet Photodetectors with Photo-Dark Current Ratios up to 1000.

PubMed

He, Zhiyang; Liu, Qiao; Hou, Huilin; Gao, Fengmei; Tang, Bin; Yang, Weiyou

2015-05-27

In this work, polycrystalline WO3 nanobelts were fabricated via an electrospinning process combined with subsequent air calcination. The resultant products were characterized by X-ray diffraction, field-emission scanning electron microscopy, and high-resolution transmission electron microscopy in regard to the structures. It has been found that the applied voltage during the electrospinning process played the determined role in the formation of the WO3 nanobelts, allowing the controlled growth of the nanobelts. The ultraviolet (UV) photodetector assembled by an individual WO3 nanobelt exhibits a high sensitivity and a precise selectivity to the different wavelength lights, with a very low dark current and typical photo-dark current ratio up to 1000, which was the highest for any WO3 photodectectors ever reported. This work could not only push forward the facile preparation of WO3 nanobelts but also represent, for the first time, the possibility that the polycrystalline WO3 nanobelts could be a promising building block for the highly efficient UV photodetectors.

High-Performance Visible-Blind Ultraviolet Photodetector Based on IGZO TFT Coupled with p-n Heterojunction.

PubMed

Yu, Jingjing; Javaid, Kashif; Liang, Lingyan; Wu, Weihua; Liang, Yu; Song, Anran; Zhang, Hongliang; Shi, Wen; Chang, Ting-Chang; Cao, Hongtao

2018-03-07

A visible-blind ultraviolet (UV) photodetector was designed based on a three-terminal electronic device of thin-film transistor (TFT) coupled with two-terminal p-n junction optoelectronic device, in hope of combining the beauties of both of the devices together. Upon the uncovered back-channel surface of amorphous indium-gallium-zinc-oxide (IGZO) TFT, we fabricated PEDOT:PSS/SnO x /IGZO heterojunction structure, through which the formation of a p-n junction and directional carrier transfer of photogenerated carriers were experimentally validated. As expected, the photoresponse characteristics of the newly designed photodetector, with a photoresponsivity of 984 A/W at a wavelength of 320 nm, a UV-visible rejection ratio up to 3.5 × 10 7 , and a specific detectivity up to 3.3 × 10 14 Jones, are not only competitive compared to the previous reports but also better than those of the pristine IGZO phototransistor. The hybrid photodetector could be operated in the off-current region with low supply voltages (<0.1 V) and ultralow power dissipation (<10 nW under illumination and ∼0.2 pW in the dark). Moreover, by applying a short positive gate pulse onto the gate, the annoying persistent photoconductivity presented in the wide band gap oxide-based devices could be suppressed conveniently, in hope of improving the response rate. With the terrific photoresponsivity along with the advantages of photodetecting pixel integration, the proposed phototransistor could be potentially used in high-performance visible-blind UV photodetector pixel arrays.

Effects of thermal treatment on the Mg{sub x}Zn{sub 1−x}O films and fabrication of visible-blind and solar-blind ultraviolet photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tian, Chunguang; Jiang, Dayong, E-mail: dayongjiangcust@126.com; Tan, Zhendong

Highlights: • Single-phase wurtzite/cubic Mg{sub x}Zn{sub 1−x}O films were grown by RF magnetron sputtering technique. • We focus on the red-shift caused by annealing the Mg{sub x}Zn{sub 1−x}O films. • MSM-structured visible-blind and solar-blind UV photodetectors were fabricated. - Abstract: A series of single-phase Mg{sub x}Zn{sub 1−x}O films with different Mg contents were prepared on quartz substrates by RF magnetron sputtering technique using different MgZnO targets, and annealed under the atmospheric environment. The absorption edges of Mg{sub x}Zn{sub 1−x}O films can cover the whole near ultraviolet and even the whole solar-blind spectra range, and the solar-blind wurtzite/cubic Mg{sub x}Zn{sub 1−x}Omore » films have been realized successfully by the same method. In addition, the absorption edges of annealed films shift to a long wavelength, which is caused by the diffusion of Zn atoms gathering at the surface during the thermal treatment process. Finally, the truly solar-blind metal-semiconductor-metal structured photodetectors based on wurtzite Mg{sub 0.445}Zn{sub 0.555}O and cubic Mg{sub 0.728}Zn{sub 0.272}O films were fabricated. The corresponding peak responsivities are 17 mA/W at 275 nm and 0.53 mA/W at 250 nm under a 120 V bias, respectively.« less

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Chang-Yong; Stein, Aaron

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Extreme Carrier Depletion and Superlinear Photoconductivity in Ultrathin Parallel-Aligned ZnO Nanowire Array Photodetectors Fabricated by Infiltration Synthesis

DOE PAGES

Nam, Chang-Yong; Stein, Aaron

2017-11-15

Ultrathin semiconductor nanowires enable high-performance chemical sensors and photodetectors, but their synthesis and device integration by standard complementary metal-oxide-semiconductor (CMOS)-compatible processes remain persistent challenges. This work demonstrates fully CMOS-compatible synthesis and integration of parallel-aligned polycrystalline ZnO nanowire arrays into ultraviolet photodetectors via infiltration synthesis, material hybridization technique derived from atomic layer deposition. The nanowire photodetector features unique, high device performances originating from extreme charge carrier depletion, achieving photoconductive on–off ratios of >6 decades, blindness to visible light, and ultralow dark currents as low as 1 fA, the lowest reported for nanostructure-based photoconductive photodetectors. Surprisingly, the low dark current is invariantmore » with increasing number of nanowires and the photodetector shows unusual superlinear photoconductivity, observed for the first time in nanowires, leading to increasing detector responsivity and other parameters for higher incident light powers. Temperature-dependent carrier concentration and mobility reveal the photoelectrochemical-thermionic emission process at grain boundaries, responsible for the observed unique photodetector performances and superlinear photoconductivity. Here, the results elucidate fundamental processes responsible for photogain in polycrystalline nanostructures, providing useful guidelines for developing nanostructure-based detectors and sensors. Lastly, the developed fully CMOS-compatible nanowire synthesis and device fabrication methods also have potentials for scalable integration of nanowire sensor devices and circuitries.« less

Improved Photoresponse Performance of Self-Powered ZnO/Spiro-MeOTAD Heterojunction Ultraviolet Photodetector by Piezo-Phototronic Effect.

PubMed

Shen, Yanwei; Yan, Xiaoqin; Si, Haonan; Lin, Pei; Liu, Yichong; Sun, Yihui; Zhang, Yue

2016-03-09

Strain-induced piezoelectric potential (piezopotential) within wurtzite-structured ZnO can engineer the energy-band structure at a contact or a junction and, thus, enhance the performance of corresponding optoelectronic devices by effectively tuning the charge carriers' separation and transport. Here, we report the fabrication of a flexible self-powered ZnO/Spiro-MeOTAD hybrid heterojunction ultraviolet photodetector (UV PD). The obtained device has a fast and stable response to the UV light illumination at zero bias. Together with responsivity and detectivity, the photocurrent can be increased about 1-fold upon applying a 0.753% tensile strain. The enhanced performance can be attributed to more efficient separation and transport of photogenerated electron-hole pairs, which is favored by the positive piezopotential modulated energy-band structure at the ZnO-Spiro-MeOTAD interface. This study demonstrates a promising approach to optimize the performance of a photodetector made of piezoelectric semiconductor materials through straining.

Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.

The electrical characteristics of gallium nitride (GaN) ultraviolet (UV) photodetectors with graphene and semitransparent Ni/Au electrodes subjected to 2 MeV proton irradiation are reported and compared. Graphene is shown to have a very high transmittance (87%) in the UV regime (365 nm) compared to semitransparent Ni/Au (3 nm / 10 nm) films (32%). Correspondingly, microfabricated graphene/GaN photodetectors showed a much higher pre-irradiation responsivity of 3388 A/W while that of semitransparent Ni/Au/GaN photodetectors was 351 A/W. For both types of electrodes, intermittent current-voltage measurements made during 2 MeV proton irradiation showed minimal variation up to a fluence of approximately 3.8 ×more » 10 13 cm -2. Additionally, Raman spectroscopy of 200 keV proton beam, 3.8 × 10 13 cm -2 irradiated graphene showed minimal disorder with only a 6% increase in ID/IG compared to pre-irradiated graphene. These results support the use of graphene-enhanced GaN UV photodetectors in radiation-rich environments such as deep space.« less

Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

NASA Astrophysics Data System (ADS)

Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; Dowling, Karen M.; Wang, Yongqiang; Senesky, Debbie G.

2017-12-01

The electrical characteristics of gallium nitride (GaN) ultraviolet (UV) photodetectors with graphene and semitransparent Ni/Au electrodes subjected to 2 MeV proton irradiation are reported and compared. Graphene is shown to have a very high transmittance (87%) in the UV regime (365 nm) compared to semitransparent Ni/Au (3 nm/10 nm) films (32%). Correspondingly, microfabricated graphene/GaN photodetectors showed a much higher pre-irradiation responsivity of 3388 A/W, while that of semitransparent Ni/Au/GaN photodetectors was 351 A/W. For both types of electrodes, intermittent current-voltage measurements performed during 2 MeV proton irradiation showed minimal variation up to a fluence of approximately 3.8 × 1013 cm-2. Additionally, Raman spectroscopy of 200 keV proton beam, 3.8 × 1013 cm-2 irradiated graphene showed minimal disorder with only a 6% increase in ID/IG compared to pre-irradiated graphene. These results support the use of graphene-enhanced GaN UV photodetectors in radiation-rich environments such as deep space.

Graphene-enhanced gallium nitride ultraviolet photodetectors under 2 MeV proton irradiation

DOE PAGES

Miller, Ruth A.; So, Hongyun; Chiamori, Heather C.; ...

2017-12-11

The electrical characteristics of gallium nitride (GaN) ultraviolet (UV) photodetectors with graphene and semitransparent Ni/Au electrodes subjected to 2 MeV proton irradiation are reported and compared. Graphene is shown to have a very high transmittance (87%) in the UV regime (365 nm) compared to semitransparent Ni/Au (3 nm / 10 nm) films (32%). Correspondingly, microfabricated graphene/GaN photodetectors showed a much higher pre-irradiation responsivity of 3388 A/W while that of semitransparent Ni/Au/GaN photodetectors was 351 A/W. For both types of electrodes, intermittent current-voltage measurements made during 2 MeV proton irradiation showed minimal variation up to a fluence of approximately 3.8 ×more » 10 13 cm -2. Additionally, Raman spectroscopy of 200 keV proton beam, 3.8 × 10 13 cm -2 irradiated graphene showed minimal disorder with only a 6% increase in ID/IG compared to pre-irradiated graphene. These results support the use of graphene-enhanced GaN UV photodetectors in radiation-rich environments such as deep space.« less

Photocurrent enhancement mechanisms in bilayer nanofilm-based ultraviolet photodetectors made from ZnO and ZnS spherical nanoshells

PubMed Central

2014-01-01

Hollow-sphere bilayer nanofilm-based ultraviolet light photodetectors made from ZnO and ZnS spherical nanoshells show enhanced photocurrent, which are comparable to or even better than those of other semiconductor nanostructures with different shapes. In this work, the photocurrent enhancement mechanisms of these bilayer nanofilm-based ultraviolet light photodetectors are explained, which could be attributed to the strong light absorption based on the whispering gallery mode resonances, the separation of the photogenerated carriers through the internal electric field within the bilayer nanofilms, the hopping-like electrical transport, and the effective charge injection from Cr/Au contacts to the nanofilms. PMID:25136287

Fabrications and application of single crystalline GaN for high-performance deep UV photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velazquez, R.; Rivera, M.; Feng, P., E-mail: p.feng@upr.edu

2016-08-15

High-quality single crystalline Gallium Nitride (GaN) semiconductor has been synthesized using molecule beam epitaxy (MBE) technique for development of high-performance deep ultraviolet (UV) photodetectors. Thickness of the films was estimated by using surface profile meter and scanning electron microscope. Electronic states and elemental composition of the films were obtained using Raman scattering spectroscopy. The orientation, crystal structure and phase purity of the films were examined using a Siemens x-ray diffractometer radiation. The surface microstructure was studied using high resolution scanning electron microscopy (SEM). Two types of metal pairs: Al-Al, Al-Cu or Cu-Cu were used for interdigital electrodes on GaN filmmore » in order to examine the Schottky properties of the GaN based photodetector. The characterizations of the fabricated prototype include the stability, responsivity, response and recovery times. Typical time dependent photoresponsivity by switching different UV light source on and off five times for each 240 seconds at a bias of 2V, respectively, have been obtained. The detector appears to be highly sensitive to various UV wavelengths of light with very stable baseline and repeatability. The obtained photoresponsivity was up to 354 mA/W at the bias 2V. Higher photoresponsivity could be obtained if higher bias was applied but it would unavoidably result in a higher dark current. Thermal effect on the fabricated GaN based prototype was discussed.« less

Engineering Graphene Quantum Dots for Enhanced Ultraviolet and Visible Light p-Si Nanowire-Based Photodetector.

PubMed

Mihalache, Iuliana; Radoi, Antonio; Pascu, Razvan; Romanitan, Cosmin; Vasile, Eugenia; Kusko, Mihaela

2017-08-30

In this work, a significant improvement of the classical silicon nanowire (SiNW)-based photodetector was achieved through the realization of core-shell structures using newly designed GQD PEI s via simple solution processing. The poly(ethyleneimine) (PEI)-assisted synthesis successfully tuned both optical and electrical properties of graphene quantum dots (GQDs) to fulfill the requirements for strong yellow photoluminescence emission along with large band gap formation and the introduction of electronic states inside the band gap. The fabrication of a GQD PEI -based device was followed by systematic structural and photoelectronic investigation. Thus, the GQD PEI /SiNW photodetector exhibited a large photocurrent to dark current ratio (I ph /I dark up to ∼0.9 × 10 2 under 4 V bias) and a remarkable improvement of the external quantum efficiency values that far exceed 100%. In this frame, GQD PEI s demonstrate the ability to arbitrate both charge-carrier photogeneration and transport inside a heterojunction, leading to simultaneous attendance of various mechanisms: (i) efficient suppression of the dark current governed by the type I alignment in energy levels, (ii) charge photomultiplication determined by the presence of the PEI-induced electron trap levels, and (iii) broadband ultraviolet-to-visible downconversion effects.

An efficient fast response and high-gain solar-blind flexible ultraviolet photodetector employing hybrid geometry

NASA Astrophysics Data System (ADS)

Hussain, Amreen A.; Pal, Arup R.; Patil, Dinkar S.

2014-05-01

We report high performance flexible hybrid ultraviolet photodetector with solar-blind sensitivity using nanocomposite film of plasma polymerized aniline-titanium dioxide. A facile solvent-free plasma technique is used to synthesize superior quality hybrid material with high yield. The hybrid photodetector exhibited high photoconductive gain of the order of ˜105 and fast speed with response and recovery time of 22.87 ms and 34.23 ms. This is an excellent result towards getting a balance in the response speed and photoconductive gain trade-off of the photodetectors reported so far. In addition, the device has the advantages of enhanced photosensitivity ((Ilight - Idark)/Idark) of the order of ˜102 and high responsivity of ˜104 AW-1. All the merits substantiates that, to prepare hybrid material, plasma based method holds potential to be an easy way for realizing large scale nanostructured photodetectors for practical applications.

Development of an Amorphous Selenium-Based Photodetector Driven by a Diamond Cold Cathode

PubMed Central

Masuzawa, Tomoaki; Saito, Ichitaro; Yamada, Takatoshi; Onishi, Masanori; Yamaguchi, Hisato; Suzuki, Yu; Oonuki, Kousuke; Kato, Nanako; Ogawa, Shuichi; Takakuwa, Yuji; Koh, Angel T. T.; Chua, Daniel H. C.; Mori, Yusuke; Shimosawa, Tatsuo; Okano, Ken

2013-01-01

Amorphous-selenium (a-Se) based photodetectors are promising candidates for imaging devices, due to their high spatial resolution and response speed, as well as extremely high sensitivity enhanced by an internal carrier multiplication. In addition, a-Se is reported to show sensitivity against wide variety of wavelengths, including visible, UV and X-ray, where a-Se based flat-panel X-ray detector was proposed. In order to develop an ultra high-sensitivity photodetector with a wide detectable wavelength range, a photodetector was fabricated using a-Se photoconductor and a nitrogen-doped diamond cold cathode. In the study, a prototype photodetector has been developed, and its response to visible and ultraviolet light are characterized. PMID:24152932

ZnO nanowire Schottky barrier ultraviolet photodetector with high sensitivity and fast recovery speed

NASA Astrophysics Data System (ADS)

Cheng, Gang; Wu, Xinghui; Liu, Bing; Li, Bing; Zhang, Xingtang; Du, Zuliang

2011-11-01

ZnO nanowire (NW) ultraviolet (UV) photodetectors have high sensitivity, while the long recovery time is an important limitation for its applications. In this paper, we demonstrate the promising applications of ZnO NW Schottky barrier as high performance UV photodetector with high sensitivity and fast recovery speed. The on/off ratio, sensitivity, and photocurrent gain are 4 × 105, 2.6 × 103 A/W, and 8.5 × 103, respectively. The recovery time is 0.28 s when photocurrent decreases by 3 orders of magnitude, and the corresponding time constant is as short as 46 ms. The physical mechanisms of the fast recovery properties have also been discussed.

Self-Powered, Flexible, and Solution-Processable Perovskite Photodetector Based on Low-Cost Carbon Cloth.

PubMed

Sun, Haoxuan; Lei, Tianyu; Tian, Wei; Cao, Fengren; Xiong, Jie; Li, Liang

2017-07-01

Flexible perovskite photodetectors are usually constructed on indium-tin-oxide-coated polymer substrates, which are expensive, fragile, and not resistant to high temperature. Herein, for the first time, a high-performance flexible perovskite photodetector is fabricated based on low-cost carbon cloth via a facile solution processable strategy. In this device, perovskite microcrystal and Spiro-OMeTAD (hole transporting material) blended film act as active materials for light detection, and carbon cloth serves as both a flexible substrate and a conductive electrode. The as-fabricated photodetector shows a broad spectrum response from ultraviolet to near-infrared light, high responsivity, fast response speed, long-term stability, and self-powered capability. Flexible devices show negligible degradation after several tens of bending cycles and at the extremely bending angle of 180°. This work promises a new technique to construct flexible, high-performance photodetectors with low cost and self-powered capability. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Carbon nanotube woven textile photodetector

NASA Astrophysics Data System (ADS)

Zubair, Ahmed; Wang, Xuan; Mirri, Francesca; Tsentalovich, Dmitri E.; Fujimura, Naoki; Suzuki, Daichi; Soundarapandian, Karuppasamy P.; Kawano, Yukio; Pasquali, Matteo; Kono, Junichiro

2018-01-01

The increasing interest in mobile and wearable technology demands the enhancement of functionality of clothing through incorporation of sophisticated architectures of multifunctional materials. Flexible electronic and photonic devices based on organic materials have made impressive progress over the past decade, but higher performance, simpler fabrication, and most importantly, compatibility with woven technology are desired. Here we report on the development of a weaved, substrateless, and polarization-sensitive photodetector based on doping-engineered fibers of highly aligned carbon nanotubes. This room-temperature-operating, self-powered detector responds to radiation in an ultrabroad spectral range, from the ultraviolet to the terahertz, through the photothermoelectric effect, with a low noise-equivalent power (a few nW/Hz 1 /2) throughout the range and with a Z T -factor value that is twice as large as that of previously reported carbon nanotube-based photothermoelectric photodetectors. Particularly, we fabricated a ˜1 -m-long device consisting of tens of p+-p- junctions and weaved it into a shirt. This device demonstrated a collective photoresponse of the series-connected junctions under global illumination. The performance of the device did not show any sign of deterioration through 200 bending tests with a bending radius smaller than 100 μ m as well as standard washing and ironing cycles. This unconventional photodetector will find applications in wearable technology that require detection of electromagnetic radiation.

Rapidly synthesized ZnO nanowires by ultraviolet decomposition process in ambient air for flexible photodetector.

PubMed

Wu, Jyh Ming; Chen, Yi-Ru; Lin, Yu-Hung

2011-03-01

We are the first group to use a simple direct ultraviolet light (UV, λ=365 nm, I=76 mW cm(-2)) in a decomposition process to fabricate ZnO nanowires on a flexible substrate using a zinc acetylacetonate hydrate precursor in ambient air. ZnO nanocrystal (or nanowire) production only requires three to ten minutes. A field emission scanning electron microscopy (FESEM) image reveals a high aspect ratio of the ZnO nanowires, which are grown on a substrate with a diameter of ∼50-100 nm, and a length of up to several hundred microns. High resolution transmission electron microscopy (HRTEM) images reveal that the nanowires consist of many single crystalline ZnO nanoparticles that grow along the c axis, which suggests an oriented attachment process. A potential application for flexible UV photodetectors was investigated using a UV lamp (λ=365 nm, I=2.34 mW cm(-2)). A significant ratio of photocurrent to dark current--around 11,300%--was achieved.

High performance ultraviolet photodetectors based on ZnO nanoflakes/PVK heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cai, Yuhua; Xiang, Jinzhong, E-mail: jzhxiang@ynu.edu.cn; Tang, Libin, E-mail: scitang@163.com

2016-08-15

A high performance ultraviolet (UV) photodetector is receiving increasing attention due to its significant applications in fire warning, environmental monitoring, scientific research, astronomical observation, etc. The enhancement in performance of the UV photodetector has been impeded by lacking of a high-efficiency heterojunction in which UV photons can efficiently convert into charges. In this work, the high performance UV photodetectors have been realized by utilizing organic/inorganic heterojunctions based on a ZnO nanoflakes/poly (N-vinylcarbazole) hybrid. A transparent conducting polymer poly(3,4-ethylene-dioxythiophene):poly(styrenesulfonate)-coated quartz substrate is employed as the anode in replacement of the commonly ITO-coated glass in order to harvest shorter UV light. Themore » devices show a lower dark current density, with a high responsivity (R) of 7.27 × 10{sup 3 }A/W and a specific detectivity (D*) of 6.20 × 10{sup 13} cm Hz{sup 1/2}/W{sup −1} at 2 V bias voltage in ambient environment (1.30 mW/cm{sup 2} at λ = 365 nm), resulting in the enhancements in R and D* by 49% and one order of magnitude, respectively. The study sheds light on developing high-performance, large scale-array, flexible UV detectors using the solution processable method.« less

ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity

NASA Astrophysics Data System (ADS)

Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

2016-12-01

A ZnO quantum dot photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W-1 and detectivity of more than 1.02 × 1013 Jones (Jones = cm Hz1/2 W-1) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W-1 to 1915 A W-1 and the detectivity is improved from 5.8 × 1012 to 1.0 × 1013 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors.

PubMed

Gao, Yi; Lei, Shuijin; Kang, Tingting; Fei, Linfeng; Mak, Chee-Leung; Yuan, Jian; Zhang, Mingguang; Li, Shaojuan; Bao, Qiaoliang; Zeng, Zhongming; Wang, Zhao; Gu, Haoshuang; Zhang, Kai

2018-06-15

Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS 3 , FePS 3 , etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS 3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW -1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS 3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.

Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Gao, Yi; Lei, Shuijin; Kang, Tingting; Fei, Linfeng; Mak, Chee-Leung; Yuan, Jian; Zhang, Mingguang; Li, Shaojuan; Bao, Qiaoliang; Zeng, Zhongming; Wang, Zhao; Gu, Haoshuang; Zhang, Kai

2018-06-01

Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS3, FePS3, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW‑1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.

Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

NASA Astrophysics Data System (ADS)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

2017-09-01

SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.

Cd1-xZnxTe photodetectors with transparent conductive ZnO contacts

NASA Astrophysics Data System (ADS)

Tang, Ke; Huang, Jian; Lu, Yuanxi; Hu, Yan; Shen, Yibin; Zhang, Jijun; Gu, Qingmiao; Wang, Linjun; Lu, Yicheng

2018-03-01

High quality Cd1-xZnxTe (CZT) films were prepared using the close-spaced sublimation (CSS) technique. CZT film UV (ultraviolet) photodetectors were fabricated with B and Ga co-doped ZnO (BGZO) transparent conductive interdigitated contacts. The contact properties of BGZO/CZT were investigated by the transmission line model (TLM). The results indicate that a good ohmic contact is formed between BGZO and CZT with a very low contact resistivity of about 0.26 Ω·cm2. Compared with CZT photodetectors with Au contacts, the detectors with BGZO contacts show a higher value of UV photo response.

Metal-Insulator-Semiconductor Photodetectors

PubMed Central

Lin, Chu-Hsuan; Liu, Chee Wee

2010-01-01

The major radiation of the Sun can be roughly divided into three regions: ultraviolet, visible, and infrared light. Detection in these three regions is important to human beings. The metal-insulator-semiconductor photodetector, with a simpler process than the pn-junction photodetector and a lower dark current than the MSM photodetector, has been developed for light detection in these three regions. Ideal UV photodetectors with high UV-to-visible rejection ratio could be demonstrated with III–V metal-insulator-semiconductor UV photodetectors. The visible-light detection and near-infrared optical communications have been implemented with Si and Ge metal-insulator-semiconductor photodetectors. For mid- and long-wavelength infrared detection, metal-insulator-semiconductor SiGe/Si quantum dot infrared photodetectors have been developed, and the detection spectrum covers atmospheric transmission windows. PMID:22163382

ZnO quantum dot-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity.

PubMed

Lu, Yanghua; Wu, Zhiqian; Xu, Wenli; Lin, Shisheng

2016-12-02

A ZnO quantum dot  photo-doped graphene/h-BN/GaN-heterostructure ultraviolet photodetector with extremely high responsivity of more than 1915 A W -1 and detectivity of more than 1.02 × 10 13 Jones (Jones = cm Hz 1/2 W -1 ) has been demonstrated. The interfaced h-BN layer increases the barrier height at the graphene/GaN heterojunction, which decreases the dark current and improves the on/off current ratio of the device. The photo-doping effect increases the barrier height and carrier concentration at the graphene/h-BN/GaN heterojunction, thus the responsivity is improved from 1473 A W -1 to 1915 A W -1 and the detectivity is improved from 5.8 × 10 12 to 1.0 × 10 13 Jones. Moreover, all of the responsivity and detectivity values are the highest values among all the graphene-based ultraviolet photodetectors.

High-Performance and Self-Powered Deep UV Photodetectors Based on High Quality 2D Boron Nitride Nanosheets

PubMed Central

Rivera, Manuel; Rahaman, Mostafizur; Zhou, Andrew F.; Mohammed Alzuraiqi, Waleed; Feng, Peter

2017-01-01

High-quality two-dimensional (2D) crystalline boron nitride nanosheets (BNNSs) were grown on silicon wafers by using pulsed plasma beam deposition techniques. Self-powered deep ultraviolet (DUV) photodetectors (PDs) based on BNNSs with Schottky contact structures are designed and fabricated. By connecting the fabricated DUV photodetector to an ammeter, the response strength, response time and recovery time to different DUV wavelengths at different intensities have been characterized using the output short circuit photocurrent without a power supply. Furthermore, effects of temperature and plasma treatment on the induced photocurrent response of detectors have also been investigated. The experimental data clearly indicate that plasma treatment would significantly improve both induced photocurrent and response time. The BNNS-based DUV photodetector is demonstrated to possess excellent performance at a temperature up to 400 °C, including high sensitivity, high signal-to-noise ratio, high spectral selectivity, high speed, and high stability, which is better than almost all reported semiconducting nanomaterial-based self-powered photodetectors. PMID:29257098

A simple and transparent well-aligned ZnO nanowire array ultraviolet photodetector with high responsivity

NASA Astrophysics Data System (ADS)

Yin, Lei; Ding, Hesheng; Yuan, Zhaolin; Huang, Wendeng; Shuai, Chunjiang; Xiong, Zhaoxin; Deng, Jianping; Lv, Tengbo

2018-06-01

Well-aligned zinc oxide (ZnO) nanowire arrays were grown on an interdigital patterned fluorine tin oxide (FTO)-coated glass substrate by a facile chemical bath deposition at low temperature. Morphology, crystalline structure, and optical properties of the ZnO nanowire arrays were analyzed in detail. The results revealed that the ZnO nanowires had wurtzite structure, typically ∼40-60 nm in diameter, and ∼700-800 nm in length, a great number of highly uniform and dense nanowires grew vertically on the substrate to form the well-aligned ZnO nanowire arrays, which had very high optical transmission (>86%) in the visible light region. In addition, the performance of ZnO nanowire arrays ultraviolet (UV) photodetector was systematically examined. The photosensitivity (S), responsivity (R), response and decay time of the photodetector were 703 at +0.2 V, 113 A/W at +5 V, 23 s and 73 s respectively. Also, the photoresponse mechanism of the UV photodetector was illuminated in terms of the oxygen adsorption-photodesorption process.

Hexagonal-like Nb2O5 Nanoplates-Based Photodetectors and Photocatalyst with High Performances

NASA Astrophysics Data System (ADS)

Liu, Hui; Gao, Nan; Liao, Meiyong; Fang, Xiaosheng

2015-01-01

Ultraviolet (UV) photodetectors are important tools in the fields of optical imaging, environmental monitoring, and air and water sterilization, as well as flame sensing and early rocket plume detection. Herein, hexagonal-like Nb2O5 nanoplates are synthesized using a facile solvothermal method. UV photodetectors based on single Nb2O5 nanoplates are constructed and the optoelectronic properties have been probed. The photodetectors show remarkable sensitivity with a high external quantum efficiency (EQE) of 9617%, and adequate wavelength selectivity with respect to UV-A light. In addition, the photodetectors exhibit robust stability and strong dependence of photocurrent on light intensity. Also, a low-cost drop-casting method is used to fabricate photodetectors based on Nb2O5 nanoplate film, which exhibit singular thermal stability. Moreover, the hexagonal-like Nb2O5 nanoplates show significantly better photocatalytic performances in decomposing Methylene-blue and Rhdamine B dyes than commercial Nb2O5.

Optoelectronic Characterization of Infrared Photodetector Fabricated on Ge-on-Si Substrate.

PubMed

Khurelbaatar, Zagarzusem; Kil, Yeon-Ho; Kim, Taek Sung; Shim, Kyu-Hwan; Hong, Hyobong; Choi, Chel-Jong

2015-10-01

We report on the optoelectronic characterization of Ge p-i-n infrared photodetector fabricated on Ge-on-Si substrate using rapid thermal chemical vapor deposition (RTCVD). The phosphorous doping concentration and the root mean square (RMS) surface roughness of epitaxial layer was estimated to be 2 x 10(18) cm(-3) and 1.2 nm, respectively. The photodetector were characterized with respect to their dark, photocurrent and responsivities in the wavelength range of 1530-1630 nm. At 1550 nm wavelength, responsivity of 0.32 A/W was measured for a reverse bias of 1 V, corresponding to 25% external quantum efficiency, without an optimal antireflection coating. Responsivity drastically reduced from 1560 nm wavelength which could be attributed to decreased absorption of Ge at room temperature.

Effects of radiation and temperature on gallium nitride (GaN) metal-semiconductor-metal ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Chiamori, Heather C.; Angadi, Chetan; Suria, Ateeq; Shankar, Ashwin; Hou, Minmin; Bhattacharya, Sharmila; Senesky, Debbie G.

2014-06-01

The development of radiation-hardened, temperature-tolerant materials, sensors and electronics will enable lightweight space sub-systems (reduced packaging requirements) with increased operation lifetimes in extreme harsh environments such as those encountered during space exploration. Gallium nitride (GaN) is a ceramic, semiconductor material stable within high-radiation, high-temperature and chemically corrosive environments due to its wide bandgap (3.4 eV). These material properties can be leveraged for ultraviolet (UV) wavelength photodetection. In this paper, current results of GaN metal-semiconductor-metal (MSM) UV photodetectors behavior after irradiation up to 50 krad and temperatures of 15°C to 150°C is presented. These initial results indicate that GaN-based sensors can provide robust operation within extreme harsh environments. Future directions for GaN-based photodetector technology for down-hole, automotive and space exploration applications are also discussed.

Effect of p-GaN layer doping on the photoresponse of GaN-based p-i-n ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Wanjun; Wang, Guosheng; Wu, Haoran; Wang, Tanglin; Song, Man

2015-08-01

We report on two-dimensional (2D) numerical simulations of photoresponse characteristics for GaN based p-i-n ultraviolet (UV) photodetectors. Effects of doping density of p-GaN layer on the photoresponse have been investigated. In order to accurately simulate the device performance, the theoretical calculation includes doping-dependent mobility degradation by Arora model and high field saturation model. Theoretical modeling shows that the doping density of p- GaN layer can significantly affect the photoresponse of GaN based p-i-n UV photodetectors, especially at schottky contact. We have to make a suitable choice of the doping in the device design according to the simulation results.

Optoelectronic characteristics of UV photodetector based on GaN/ZnO nanorods p- i- n heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Lichun; Zhao, Fengzhou; Wang, Caifeng; Wang, Feifei; Huang, Ruizhi; Li, Qingshan

2015-07-01

We demonstrate an efficient ultraviolet (UV) photodetector operating at room temperature based on n-ZnO nanorods/ i-ZnO/ p-GaN heterojunctions. We employ x-ray diffraction and field-emission scanning electron microscopy to confirm the high quality of the ZnO nanorods using an undoped ZnO film as the interlayer. Then, we investigate the photoelectric properties of the fabricated photodetector with UV light illumination under a different reverse bias. Based on the current-voltage curve, the photocurrent to dark current ratio is approximately 73.3 at -4 V. At zerobias voltage, the peak responsivity was 138.9 mA/W at 362 nm under front-illumination conditions. Time-varying measurements indicate the reproducibility and stability of the heterojunction photodetector. [Figure not available: see fulltext.

Self-driven visible-blind photodetector based on ferroelectric perovskite oxides

NASA Astrophysics Data System (ADS)

Li, Jian-kun; Ge, Chen; Jin, Kui-juan; Du, Jian-yu; Yang, Jing-ting; Lu, Hui-bin; Yang, Guo-zhen

2017-04-01

Ultraviolet photodetectors have attracted considerable interest for a variety of applications in health, industry, and science areas. Self-driven visible-blind photodetectors represent an appealing type of sensor, due to the reduced size and high flexibility. In this work, we employed BaTiO3 (BTO) single crystals with a bandgap of 3.2 eV for the realization of a self-driven ultraviolet detector, by utilizing the ferroelectric properties of BTO. We found that the sign of the photocurrent can be reversed by flipping the ferroelectric polarization, which makes the photodetector suitable for electrical manipulation. The photoelectric performance of this photodetector was systematically investigated in terms of rectification character, stability of short-circuit photocurrent, spectral response, and transient photoelectric response. Particularly, the self-driven photodetectors based on BTO showed an ultrafast response time about 200 ps. It is expected that the present work can provide a route for the design of photodetectors based on ferroelectric oxides.

A Comprehensive Review of Semiconductor Ultraviolet Photodetectors: From Thin Film to One-Dimensional Nanostructures

PubMed Central

Sang, Liwen; Liao, Meiyong; Sumiya, Masatomo

2013-01-01

Ultraviolet (UV) photodetectors have drawn extensive attention owing to their applications in industrial, environmental and even biological fields. Compared to UV-enhanced Si photodetectors, a new generation of wide bandgap semiconductors, such as (Al, In) GaN, diamond, and SiC, have the advantages of high responsivity, high thermal stability, robust radiation hardness and high response speed. On the other hand, one-dimensional (1D) nanostructure semiconductors with a wide bandgap, such as β-Ga2O3, GaN, ZnO, or other metal-oxide nanostructures, also show their potential for high-efficiency UV photodetection. In some cases such as flame detection, high-temperature thermally stable detectors with high performance are required. This article provides a comprehensive review on the state-of-the-art research activities in the UV photodetection field, including not only semiconductor thin films, but also 1D nanostructured materials, which are attracting more and more attention in the detection field. A special focus is given on the thermal stability of the developed devices, which is one of the key characteristics for the real applications. PMID:23945739

Flexible Photodetectors Based on 1D Inorganic Nanostructures

PubMed Central

Lou, Zheng

2015-01-01

Flexible photodetectors with excellent flexibility, high mechanical stability and good detectivity, have attracted great research interest in recent years. 1D inorganic nanostructures provide a number of opportunities and capabilities for use in flexible photodetectors as they have unique geometry, good transparency, outstanding mechanical flexibility, and excellent electronic/optoelectronic properties. This article offers a comprehensive review of several types of flexible photodetectors based on 1D nanostructures from the past ten years, including flexible ultraviolet, visible, and infrared photodetectors. High‐performance organic‐inorganic hybrid photodetectors, as well as devices with 1D nanowire (NW) arrays, are also reviewed. Finally, new concepts of flexible photodetectors including piezophototronic, stretchable and self‐powered photodetectors are examined to showcase the future research in this exciting field. PMID:27774404

Ultraviolet photodetector using pn junction formed by transferrable hollow n-TiO2 nano-spheres monolayer.

PubMed

Yang, Taeyoung; Park, Seong-Jin; Kim, Taek Gon; Shin, Dong Su; Suh, Kyung-do; Park, Jinsub

2017-12-11

We report an ultraviolet (UV) photodetector with a universally transferable monolayer film with ordered hollow TiO 2 spheres on p-GaN. After forming a TiO 2 monolayer film by unidirectional rubbing of hollow TiO 2 spheres on a polydimethylsiloxane (PDMS) supporting plate, we used a 5% polyvinyl alcohol (PVA) aqueous solution to transfer the film onto the target substrate. The PVA/TiO 2 monolayer film was detached from the PDMS film and transferred to the p-GaN/Al 2 O 3 substrate. To investigate the effects of crystallized phases of the TiO 2 hollow spheres, anatase and rutile TiO 2 sphere monolayers prepared by combining template synthesis and thermal treatment. The responsiveness of the UV photodetectors using anatase and rutile hollow n-TiO 2 monolayer/p-GaN was 0.203 A/W at 312 nm and 0.093 A/W at 327 nm, respectively.

Humidity sensor and ultraviolet photodetector based on carrier trapping effect and negative photoconductivity in graphene quantum dots

NASA Astrophysics Data System (ADS)

Zhuang, ShenDong; Chen, Yan; Zhang, WeiChao; Chen, Zhuo; Wang, ZhenLin

2018-01-01

We report on the experimental realization of a graphene quantum dots (GQD)-based humidity sensor and ultraviolet (UV) photodetector. We demonstrate that the conductance of the GQD increases linearly with increasing relative humidity (RH) of the surrounding environment due to the carrier trapping effect, which forms the basis of a humidity sensor. When the sensor is operated in the dark state, the sensitivity can reach as high as 0.48 nS RH -1. The GQD are also found to exhibit light intensity dependent negative photoconductivity under the UV irradiation, which can be exploited for UV detection. As a result of these carrier trapping and de-trapping processes, the performance of the photodetector can be significantly improved with the increasing RH, and the photoresponsivity can reach a high value of -418.1 μA W-1 in the high humid state of RH=90%.

High-performance ultraviolet detection and visible-blind photodetector based on Cu{sub 2}O/ZnO nanorods with poly-(N-vinylcarbazole) intermediate layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perng, Dung-Ching, E-mail: dcperng@ee.ncku.edu.tw; Center for Micro/Nano Science and Technology, National Cheng Kung University, One University Road, Tainan 701, Taiwan; Lin, Hsueh-Pin

This study reports a high-performance hybrid ultraviolet (UV) photodetector with visible-blind sensitivity fabricated by inserting a poly-(N-vinylcarbazole) (PVK) intermediate layer between low-cost processed Cu{sub 2}O film and ZnO nanorods (NRs). The PVK layer acts as an electron-blocking/hole-transporting layer between the n-ZnO and p-Cu{sub 2}O films. The Cu{sub 2}O/PVK/ZnO NR photodetector exhibited a responsivity of 13.28 A/W at 360 nm, a high detectivity of 1.03 × 10{sup 13} Jones at a low bias of −0.1 V under a low UV light intensity of 24.9 μW/cm{sup 2}. The photo-to-dark current ratios of the photodetector with and without the PVK intermediate layer at a bias of −0.5 V are 1.34 × 10{supmore » 2} and 3.99, respectively. The UV-to-visible rejection ratios (R{sub 360 nm}/R{sub 450 nm}) are 350 and 1.735, respectively. Several features are demonstrated: (a) UV photo-generated holes at the ZnO NRs can effectively be transported through the PVK layer to the p-Cu{sub 2}O layer; (b) the insertion of a PVK buffer layer significantly minimizes the reverse-bias leakage current, which leads to a larger amplification of the photocurrent; and (c) the PVK buffer layer greatly improves the UV-to-visible responsivity ratio, allowing the device to achieve high UV detection sensitivity at a low bias voltage using a very low light intensity.« less

Simulation based comparative analysis of photoresponse in front- and back-illuminated GaN P-I-N ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Wang, Jun; Guo, Jin; Xie, Feng; Wang, Guosheng; Wu, Haoran; Song, Man; Yi, Yuanyuan

2016-10-01

This paper presents the comparative analysis of influence of doping level and doping profile of the active region on zero bias photoresponse characteristics of GaN-based p-i-n ultraviolet (UV) photodetectors operating at front- and back-illuminated. A two dimensional physically-based computer simulation of GaN-based p-i-n UV photodetectors is presented. We implemented GaN material properties and physical models taken from the literature. It is shown that absorption layer doping profile has notable impacts on the photoresponse of the device. Especially, the effect of doping concentration and distribution of the absorption layer on photoresponse is discussed in detail. In the case of front illumination, comparative to uniform n-type doping, the device with n-type Gaussian doping profiles at absorption layer has higher responsivity. Comparative to front illumination, back illuminated detector with p-type doping profiles at absorption layer has higher maximum photoresponse, while the Gaussian doping profiles have a weaker ability to enhance the device responsivity. It is demonstrated that electric field distribution, mobility degradation, and recombinations are jointly responsible for the variance of photoresponse. Our work enriches the understanding and utilization of GaN based p-i-n UV photodetectors.

Design and fabrication of prototype 6×6 cm 2 microchannel plate photodetector with bialkali photocathode for fast timing applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Junqi; Byrum, Karen; Demarteau, Marcel

Planar microchannel plate-based photodetector with bialkali photocathode is capable of fast and accurate time and position resolutions. A new 6 cm x 6 cm photodetector production facility was designed and built at Argonne National Laboratory. Small form-factor MCP-based photodetectors completely constructed of glass were designed and prototypes were successfully fabricated. Knudsen effusion cells were incorporated in the photocathode growth chamber to achieve uniform and high quantum efficiency hotocathodes. The thin film uniformity distribution was simulated and measured for an antimony film deposition, showing uniformity of better than 10%. Several prototype devices with bialkali photocathodes have been fabricated with the describedmore » system and their characteristics were evaluated in the large signal (multi-PE) limit. A typical prototype device exhibits time-of-flight resolution of ~ 27 psec and differential time resolution of ~ 9 psec, corresponding to spatial resolution of ~ 0.65 mm.« less

Flexible and High-Performance All-2D Photodetector for Wearable Devices.

PubMed

Yao, Jiandong; Yang, Guowei

2018-05-01

Emerging novel applications at the forefront of innovation horizon raise new requirements including good flexibility and unprecedented properties for the photoelectronic industry. On account of diversity in transport and photoelectric properties, 2D layered materials have proven as competent building blocks toward next-generation photodetectors. Herein, an all-2D Bi 2 Te 3 -SnS-Bi 2 Te 3 photodetector is fabricated with pulsed-laser deposition. It is sensitive to broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm). In addition, it exhibits great durability to bend, with intact photoresponse after 100 bend cycles. Upon 370 nm illumination, it achieves a high responsivity of 115 A W -1 , a large external quantum efficiency of 3.9 × 10 4 %, and a superior detectivity of 4.1 × 10 11 Jones. They are among the best figures-of-merit of state-of-the-art 2D photodetectors. The synergistic effect of SnS's strong light-matter interaction, efficient carrier separation of Bi 2 Te 3 -SnS interface, expedite carrier injection across Bi 2 Te 3 -SnS interface, and excellent carrier collection of Bi 2 Te 3 topological insulator electrodes accounts for the superior photodetection properties. In summary, this work depicts a facile all-in-one fabrication strategy toward a Bi 2 Te 3 -SnS-Bi 2 Te 3 photodetector. More importantly, it reveals a novel all-2D concept for construction of flexible, broadband, and high-performance photoelectronic devices by integrating 2D layered metallic electrodes and 2D layered semiconducting channels. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Design and fabrication of GaAs OMIST photodetector

NASA Astrophysics Data System (ADS)

Kang, Xuejun; Lin, ShiMing; Liao, Qiwei; Gao, Junhua; Liu, Shi'an; Cheng, Peng; Wang, Hongjie; Zhang, Chunhui; Wang, Qiming

1998-08-01

We designed and fabricated GaAs OMIST (Optical-controlled Metal-Insulator-Semiconductor Thyristor) device. Using oxidation of AlAs layer that is grown by MBE forms the Ultra- Thin semi-Insulating layer (UTI) of the GAAS OMIST. The accurate control and formation of high quality semi-insulating layer (AlxOy) are the key processes for fabricating GaAs OMIST. The device exhibits a current-controlled negative resistance region in its I-V characteristics. When illuminated, the major effect of optical excitation is the reduction of the switching voltage. If the GaAs OMIST device is biased at a voltage below its dark switching voltage Vs, sufficient incident light can switch OMIST from high impedance low current 'off' state to low impedance high current 'on' state. The absorbing material of OMIST is GaAS, so if the wavelength of incident light within 600 to approximately 850 nm can be detected effectively. It is suitable to be used as photodetector for digital optical data process. The other attractive features of GaAs OMIST device include suitable conducted current, switching voltage and power levels for OEIC, high switch speed and high sensitivity to light or current injection.

GaN membrane MSM ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Muller, A.; Konstantinidis, G.; Kostopoulos, A.; Dragoman, M.; Neculoiu, D.; Androulidaki, M.; Kayambaki, M.; Vasilache, D.; Buiculescu, C.; Petrini, I.

2006-12-01

GaN exhibits unique physical properties, which make this material very attractive for wide range of applications and among them ultraviolet detection. For the first time a MSM type UV photodetector structure was manufactured on a 2.2 μm. thick GaN membrane obtained using micromachining techniques. The low unintentionally doped GaN layer structure was grown by MOCVD on high resistivity (ρ>10kΩcm) <111> oriented silicon wafers, 500μm thick. The epitaxially grown layers include a thin AlN layer in order to reduce the stress in the GaN layer and avoid cracking. Conventional contact lithography, e-gun Ni/Au (10nm /200nm) evaporation and lift-off techniques were used to define the interdigitated Schottky metalization on the top of the wafer. Ten digits with a width of 1μm and a length of 100μm were defined for each electrode. The distance between the digits was also 1μm. After the backside lapping of the wafer to a thickness of approximately 150μm, a 400nm thick Al layer was patterned and deposited on the backside, to be used as mask for the selective reactive ion etching of silicon. The backside mask, for the membrane formation, was patterned using double side alignment techniques and silicon was etched down to the 2.2μm thin GaN layer using SF 6 plasma. A very low dark current (30ρA at 3V) was obtained. Optical responsivity measurements were performed at 1.5V. A maximum responsivity of 18mA/W was obtained at a wavelength of 370nm. This value is very good and can be further improved using transparent contacts for the interdigitated structure.

Graphene photodetectors with a bandwidth  >76 GHz fabricated in a 6″ wafer process line

NASA Astrophysics Data System (ADS)

Schall, Daniel; Porschatis, Caroline; Otto, Martin; Neumaier, Daniel

2017-03-01

In recent years, the data traffic has grown exponentially and the forecasts indicate a huge market that could be addressed by communication infrastructure and service providers. However, the processing capacity, space, and energy consumption of the available technology is a serious bottleneck for the exploitation of these markets. Chip-integrated optical communication systems hold the promise of significantly improving these issues related to the current technology. At the moment, the answer to the question which material is best suited for ultrafast chip integrated communication systems is still open. In this manuscript we report on ultrafast graphene photodetectors with a bandwidth of more than 76 GHz well suitable for communication links faster than 100 GBit s-1 per channel. We extract an upper value of 7.2 ps for the timescale in which the bolometric photoresponse in graphene is generated. The photodetectors were fabricated on 6″ silicon-on-insulator wafers in a semiconductor pilot line, demonstrating the scalable fabrication of high-performance graphene based devices.

Photodetector with enhanced light absorption

DOEpatents

Kane, James

1985-01-01

A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Design and Fabrication of High-Performance LWIR Photodetectors Based on Type-II Superlattices

DTIC Science & Technology

2017-08-11

SPONSOR/MONITOR’S REPORT Kirtland AFB, NM 87117-5776 NUMBER(S) AFRL -RV-PS-TR-2017-0090 12. DISTRIBUTION / AVAILABILITY STATEMENT Approved for public...unlimited. 13 DISTRIBUTION LIST DTIC/OCP 8725 John J. Kingman Rd, Suite 0944 Ft Belvoir, VA 22060-6218 1 cy AFRL /RVIL Kirtland AFB, NM 87117-5776 2... AFRL -RV-PS- AFRL -RV-PS- TR-2017-0090 TR-2017-0090 DESIGN AND FABRICATION OF HIGH- PERFORMANCE LWIR PHOTODETECTORS BASED ON TYPE-II SUPERLATTICES

Fast Growth of GaN Epilayers via Laser-Assisted Metal-Organic Chemical Vapor Deposition for Ultraviolet Photodetector Applications.

PubMed

Rabiee Golgir, Hossein; Li, Da Wei; Keramatnejad, Kamran; Zou, Qi Ming; Xiao, Jun; Wang, Fei; Jiang, Lan; Silvain, Jean-François; Lu, Yong Feng

2017-06-28

In this study, we successfully developed a carbon dioxide (CO 2 )-laser-assisted metal-organic chemical vapor deposition (LMOCVD) approach to fast synthesis of high-quality gallium nitride (GaN) epilayers on Al 2 O 3 [sapphire(0001)] substrates. By employing a two-step growth procedure, high crystallinity and smooth GaN epilayers with a fast growth rate of 25.8 μm/h were obtained. The high crystallinity was confirmed by a combination of techniques, including X-ray diffraction, Raman spectroscopy, transmission electron microscopy, and atomic force microscopy. By optimizing growth parameters, the ∼4.3-μm-thick GaN films grown at 990 °C for 10 min showed a smooth surface with a root-mean-square surface roughness of ∼1.9 nm and excellent thickness uniformity with sharp GaN/substrate interfaces. The full-width at half-maximum values of the GaN(0002) X-ray rocking curve of 313 arcsec and the GaN(101̅2) X-ray rocking curve of 390 arcsec further confirmed the high crystallinity of the GaN epilayers. We also fabricated ultraviolet (UV) photodetectors based on the as-grown GaN layers, which exhibited a high responsivity of 0.108 A W -1 at 367 nm and a fast response time of ∼125 ns, demonstrating its high optical quality with potential in optoelectronic applications. Our strategy thus provides a simple and cost-effective means toward fast and high-quality GaN heteroepitaxy growth suitable for fabricating high-performance GaN-based UV detectors.

Al nanogrid electrode for ultraviolet detectors.

PubMed

Ding, G; Deng, J; Zhou, L; Gan, Q; Hwang, J C M; Dierolf, V; Bartoli, F J; Mazuir, C; Schoenfeld, W V

2011-09-15

Optical properties of Al nanogrids of different pitches and gaps were investigated both theoretically and experimentally. Three-dimensional finite-difference time-domain simulation predicted that surface plasmons at the air/Al interface would enhance ultraviolet transmission through the subwavelength gaps of the nanogrid, making it an effective electrode on GaN-based photodetectors to compensate for the lack of transparent electrode and high p-type doping. The predicted transmission enhancement was verified by confocal scanning optical microscopy performed at 365 nm. The quality of the nanogrids fabricated by electron-beam lithography was verified by near-field scanning optical microscopy and scanning electron microscopy. Based on the results, the pitch and gap of the nanogrids can be optimized for the best trade-off between electrical conductivity and optical transmission at different wavelengths. Based on different cutoff wavelengths, the nanogrids can also double as a filter to render photodetectors solar-blind.

Single-pixel camera with one graphene photodetector.

PubMed

Li, Gongxin; Wang, Wenxue; Wang, Yuechao; Yang, Wenguang; Liu, Lianqing

2016-01-11

Consumer cameras in the megapixel range are ubiquitous, but the improvement of them is hindered by the poor performance and high cost of traditional photodetectors. Graphene, a two-dimensional micro-/nano-material, recently has exhibited exceptional properties as a sensing element in a photodetector over traditional materials. However, it is difficult to fabricate a large-scale array of graphene photodetectors to replace the traditional photodetector array. To take full advantage of the unique characteristics of the graphene photodetector, in this study we integrated a graphene photodetector in a single-pixel camera based on compressive sensing. To begin with, we introduced a method called laser scribing for fabrication the graphene. It produces the graphene components in arbitrary patterns more quickly without photoresist contamination as do traditional methods. Next, we proposed a system for calibrating the optoelectrical properties of micro/nano photodetectors based on a digital micromirror device (DMD), which changes the light intensity by controlling the number of individual micromirrors positioned at + 12°. The calibration sensitivity is driven by the sum of all micromirrors of the DMD and can be as high as 10(-5)A/W. Finally, the single-pixel camera integrated with one graphene photodetector was used to recover a static image to demonstrate the feasibility of the single-pixel imaging system with the graphene photodetector. A high-resolution image can be recovered with the camera at a sampling rate much less than Nyquist rate. The study was the first demonstration for ever record of a macroscopic camera with a graphene photodetector. The camera has the potential for high-speed and high-resolution imaging at much less cost than traditional megapixel cameras.

Deep UV Narrow-Band Photodetector Based on Ion Beam Synthesized Indium Oxide Quantum Dots in Al2O3 Matrix.

PubMed

Rajamani, Saravanan; Arora, Kanika; Konakov, Anton; Belov, Alexey; Korolev, Dmitry; Nikolskaya, Alyona; Mikhaylov, Alexey N; Surodin, Sergey; Kryukov, Ruslan; Nikolichev, Dmitri; Sushkov, Artem; Pavlov, Dmitry; Tetelbaum, David; Kumar, Mukesh; Kumar, Mahesh

2018-04-20

Semiconductor quantum dots (QDs) have attracted tremendous attention owing to their novel electrical and optical properties due to the size dependent quantum confinement effects. This provides an advantage of tunable wavelength detection, which is essential to realize spectrally selective photodetectors. We report the fabrication and characterization of high performance narrow band ultraviolet photodetector (UV-B) based on In2O3 nanocrystals embedded in Al2O3 matrices. The In2O3 nanocrystals are synthesized in Al2O3 matrix by sequential implantation of In+ and N2+ ions and post-implantation annealing. The photodetector exhibits excellent optoelectronic performances with high spectral responsivity and external quantum efficiency. The spectral response showed a band-selective nature with a full width half maximum of ∼ 60 nm, and the responsivity reaches up to 70 A/W under 290 nm at 5 V bias. The corresponding rejection ratio to visible region was as high as 8400. The high performance of this photodetector makes it highly suitable for practical applications such as narrow-band spectrum-selective photodetectors. The device design based on ion-synthesized nanocrystals would provide a new approach for realizing a visible-blind photodetector. © 2018 IOP Publishing Ltd.

Light-induced pyroelectric effect as an effective approach for ultrafast ultraviolet nanosensing

NASA Astrophysics Data System (ADS)

Wang, Zhaona; Yu, Ruomeng; Pan, Caofeng; Li, Zhaoling; Yang, Jin; Yi, Fang; Wang, Zhong Lin

2015-09-01

Zinc oxide is potentially a useful material for ultraviolet detectors; however, a relatively long response time hinders practical implementation. Here by designing and fabricating a self-powered ZnO/perovskite-heterostructured ultraviolet photodetector, the pyroelectric effect, induced in wurtzite ZnO nanowires on ultraviolet illumination, has been utilized as an effective approach for high-performance photon sensing. The response time is improved from 5.4 s to 53 μs at the rising edge, and 8.9 s to 63 μs at the falling edge, with an enhancement of five orders in magnitudes. The specific detectivity and the responsivity are both enhanced by 322%. This work provides a novel design to achieve ultrafast ultraviolet sensing at room temperature via light-self-induced pyroelectric effect. The newly designed ultrafast self-powered ultraviolet nanosensors may find promising applications in ultrafast optics, nonlinear optics, optothermal detections, computational memories and biocompatible optoelectronic probes.

Printed photodetectors

NASA Astrophysics Data System (ADS)

Pace, Giuseppina; Grimoldi, Andrea; Sampietro, Marco; Natali, Dario; Caironi, Mario

2015-10-01

Photodetectors convert light pulses into electrical signals and are fundamental building blocks for any opto-electronic system adopting light as a probe or information carrier. They have widespread technological applications, from telecommunications to sensors in industrial, medical and civil environments. Further opportunities are plastic short-range communications systems, interactive large-area surfaces and light-weight, flexible, digital imagers. These applications would greatly benefit from the cost-effective fabrication processes enabled by printing technology. While organic semiconductors are the most investigated materials for printed photodetectors, and are the main focus of the present review, there are notable examples of other inorganic or hybrid printable semiconductors for opto-electronic systems, such as quantum-dots and nanowires. Here we propose an overview on printed photodetectors, including three-terminal phototransistors. We first give a brief account of the working mechanism of these light sensitive devices, and then we review the recent progress achieved with scalable printing techniques such as screen-printing, inkjet and other non-contact technologies in the development of all-printed or hybrid systems.

The new oxide paradigm for solid state ultraviolet photodetectors

NASA Astrophysics Data System (ADS)

Rogers, D. J.; Bove, P.; Arrateig, X.; Sandana, V. E.; Teherani, F. H.; Razeghi, M.; McClintock, R.; Frisch, E.; Harel, S.

2018-03-01

The bandgap of wurzite ZnO layers grown on 2 inch diameter c-Al2O3 substrates by pulsed laser deposition was engineered from 3.7 to 4.8 eV by alloying with Mg. Above this Mg content the layers transformed from single phase hcp to mixed hcp/fcc phase before becoming single phase fcc above a bandgap of about 5.5 eV. Metal-Semiconductor-Metal (MSM) photodetectors based on gold Inter-Digitated-Transducer structures were fabricated from the single phase hcp layers by single step negative photolithography and then packaged in TO5 cans. The devices gave over 6 orders of magnitude of separation between dark and light signal with solar rejection ratios (I270 : I350) of over 3 × 105 and dark signals of 300 pA (at a bias of -5V). Spectral responsivities were engineered to fit the "Deutscher Verein des Gas- und Wasserfaches" industry standard form and gave over two decade higher responsivities (14 A/W, peaked at 270 nm) than commercial SiC based devices. Homogeneous Ga2O3 layers were also grown on 2 inch diameter c-Al2O3 substrates by PLD. Optical transmission spectra were coherent with a bandgap that increased from 4.9 to 5.4 eV when film thickness was decreased from 825 to 145 nm. X-ray diffraction revealed that the films were of the β-Ga2O3 (monoclinic) polytype with strong (-201) orientation. β-Ga2O3 MSM photodetectors gave over 4 orders of magnitude of separation between dark and light signal (at -5V bias) with dark currents of 250 pA and spectral responsivities of up to 40 A/W (at -0.75V bias). It was found that the spectral responsivity peak position could be decreased from 250 to 230 nm by reducing film thickness from 825 to 145 nm. This shift in peak responsivity wavelength with film thickness (a) was coherent with the apparent bandgap shift that was observed in transmission spectroscopy for the same layers and (b) conveniently provides a coverage of the spectral region in which MgZnO layers show fcc/hcp phase mixing.

Neutron detector and fabrication method thereof

DOEpatents

Bhandari, Harish B.; Nagarkar, Vivek V.; Ovechkina, Olena E.

2016-08-16

A neutron detector and a method for fabricating a neutron detector. The neutron detector includes a photodetector, and a solid-state scintillator operatively coupled to the photodetector. In one aspect, the method for fabricating a neutron detector includes providing a photodetector, and depositing a solid-state scintillator on the photodetector to form a detector structure.

Effect of hydrogen peroxide pretreatment on ZnO-based metal–semiconductor–metal ultraviolet photodetectors deposited using plasma-enhanced atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yu-Chang; Lee, Hsin-Ying, E-mail: hylee@ee.ncku.edu.tw; Lee, Tsung-Hsin

2016-01-15

In this study, zinc oxide (ZnO) films were deposited on sapphire substrates using a plasma-enhanced atomic layer deposition system. Prior to deposition, the substrates were treated with hydrogen peroxide (H{sub 2}O{sub 2}) in order to increase nucleation on the initial sapphire surface and, thus, enhance the quality of deposited ZnO films. Furthermore, x-ray diffraction spectroscopy measurements indicated that the crystallinity of ZnO films was considerably enhanced by H{sub 2}O{sub 2} pretreatment, with the strongest (002) diffraction peak occurring for the film pretreated with H{sub 2}O{sub 2} for 60 min. X-ray photoelectron spectroscopy also was used, and the results indicated that amore » high number of Zn–O bonds was generated in ZnO films pretreated appropriately with H{sub 2}O{sub 2}. The ZnO film deposited on a sapphire substrate with H{sub 2}O{sub 2} pretreatment for 60 min was applied to metal–semiconductor–metal ultraviolet photodetectors (MSM-UPDs) as an active layer. The fabricated ZnO MSM-UPDs showed improvements in dark current and ultraviolet–visible rejection ratios (0.27 μA and 1.06 × 10{sup 3}, respectively) compared to traditional devices.« less

Comparison of carrier transport mechanism under UV/Vis illumination in an AZO photodetector and an AZO/p-Si heterojunction photodiode produced by spray pyrolysis

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shasti, M.; Mortezaali, A., E-mail: mortezaali@alzahra.ac.ir; Dariani, R. S.

2015-01-14

In this study, Aluminum doped Zinc Oxide (AZO) layer is deposited on p-type silicon (p-Si) by spray pyrolysis method to fabricate ultraviolet-visible (UV/Vis) photodetector as Al doping process can have positive effect on the photodetector performance. Morphology, crystalline structure, and Al concentration of AZO layer are investigated by SEM, XRD, and EDX. The goal of this study is to analyze the mechanism of carrier transport by means of current-voltage characteristics under UV/Vis illumination in two cases: (a) electrodes connected to the surface of AZO layer and (b) electrodes connected to cross section of heterojunction (AZO/p-Si). Measurements indicate that the AZO/p-Simore » photodiode exhibits a higher photocurrent and lower photoresponse time under visible illumination with respect to AZO photodetector; while under UV illumination, the above result is inversed. Besides, the internal junction field of AZO/p-Si heterojunction plays an important role on this mechanism.« less

UV-photodetector based on NiO/diamond film

NASA Astrophysics Data System (ADS)

Chang, Xiaohui; Wang, Yan-Feng; Zhang, Xiaofan; Liu, Zhangcheng; Fu, Jiao; Fan, Shuwei; Bu, Renan; Zhang, Jingwen; Wang, Wei; Wang, Hong-Xing; Wang, Jingjing

2018-01-01

In this study, a NiO/diamond UV-photodetector has been fabricated and investigated. A single crystal diamond (SCD) layer was grown on a high-pressure-high-temperature Ib-type diamond substrate by using a microwave plasma chemical vapor deposition system. NiO films were deposited directly by the reactive magnetron sputtering technique in a mixture gas of oxygen and argon onto the SCD layer. Gold films were patterned on NiO films as electrodes to form the metal-semiconductor-metal UV-photodetector which shows good repeatability and a 2 orders of magnitude UV/visible rejection ratio. Also, the NiO/diamond photodetector has a higher responsivity and a wider response range in contrast to a diamond photodetector.

Method for making a photodetector with enhanced light absorption

DOEpatents

Kane, James

1987-05-05

A photodetector including a light transmissive electrically conducting layer having a textured surface with a semiconductor body thereon. This layer traps incident light thereby enhancing the absorption of light by the semiconductor body. A photodetector comprising a textured light transmissive electrically conducting layer of SnO.sub.2 and a body of hydrogenated amorphous silicon has a conversion efficiency about fifty percent greater than that of comparative cells. The invention also includes a method of fabricating the photodetector of the invention.

Spectral response modification of TiO₂ MSM photodetector with an LSPR filter.

PubMed

Calışkan, Deniz; Bütün, Bayram; Ozcan, Sadan; Ozbay, Ekmel

2014-06-16

We fabricated UVB filtered TiO₂ MSM photodetectors by the localized surface plasmon resonance effect. A plasmonic filter structure was designed using FDTD simulations. Final filter structure was fabricated with Al nano-cylinders with a 70 nm radius 180 nm period on 360 nm SiO₂film. The spectral response of the TiO₂ MSM photodetector was modified and the UVB response was reduced by approx. 60% with an LSPR structure, resulting in a peak responsivity shift of more than 40 nm. To our knowledge, this is the first published result for the spectral response modification of TiO₂ photodetectors with LSPR technique.

Techniques for the design and simulation of interdigitated MSM photodetectors

NASA Astrophysics Data System (ADS)

Cahill, Laurence W.

1997-04-01

The metal-semiconductor (MSM) photodetector attracts a great deal of interest as a result of its high bandwidth and low fabrication costs. In this paper a broad-band circuit model for the interdigitated MSM photodetector is presented. The circuit model can be used for both design and simulation purposes. The circuit model can also take into account nonlinear effects so that the practical behavior of the photodetector can be more faithfully represented.

Enhanced Photoresponse in Metasurface-Integrated Organic Photodetectors.

PubMed

Xu, Xin; Kwon, Hoyeong; Gawlik, Brian; Mohammadi Estakhri, Nasim; Alù, Andrea; Sreenivasan, S V; Dodabalapur, Ananth

2018-06-13

In this work, we experimentally demonstrate metasurface-enhanced photoresponse in organic photodetectors. We have designed and integrated a metasurface with broadband functionality into an organic photodetector, with the goal of significantly increasing the absorption of light and generated photocurrent from 560 up to 690 nm. We discuss how the metasurface can be integrated with the fabrication of an organic photodiode. Our results show large gains in responsivity from 1.5× to 2× between 560 and 690 nm.

Solution-processed photodetectors from colloidal silicon nano/micro particle composite.

PubMed

Tu, Chang-Ching; Tang, Liang; Huang, Jiangdong; Voutsas, Apostolos; Lin, Lih Y

2010-10-11

We demonstrate solution-processed photodetectors composed of heavy-metal-free Si nano/micro particle composite. The colloidal Si particles are synthesized by electrochemical etching of Si wafers, followed by ultra-sonication to pulverize the porous surface. With alkyl ligand surface passivation through hydrosilylation reaction, the particles can form a stable colloidal suspension which exhibits bright photoluminescence under ultraviolet excitation and a broadband extinction spectrum due to enhanced scattering from the micro-size particles. The efficiency of the thin film photodetectors has been substantially improved by preventing oxidation of the particles during the etching process.

A Study on Ultraviolet Protection of 100% Cotton Knitted Fabric: Effect of Fabric Parameters

PubMed Central

Kan, C. W.

2014-01-01

The effect of fabric parameters such as weight, thickness, and stitch density on the ultraviolet (UV) protection of knitted fabrics was studied. Different knitting structures such as plain, pineapple, lacoste, and other combinations of different knitting stitches of knit, tuck, and miss as well as half milano, full milano, half cardigan, full cardigan, 1 × 1 rib, and interlock were prepared. Experimental results revealed that weight was the most important factor that affected UV protection while thickness and stitch density were not the leading factor in determining UV protection. PMID:24955409

Waveguide based compact silicon Schottky photodetector with enhanced responsivity in the telecom spectral band.

PubMed

Goykhman, Ilya; Desiatov, Boris; Khurgin, Jacob; Shappir, Joseph; Levy, Uriel

2012-12-17

We experimentally demonstrate an on-chip compact and simple to fabricate silicon Schottky photodetector for telecom wavelengths operating on the basis of internal photoemission process. The device is realized using CMOS compatible approach of local-oxidation of silicon, which enables the realization of the photodetector and low-loss bus photonic waveguide at the same fabrication step. The photodetector demonstrates enhanced internal responsivity of 12.5mA/W for operation wavelength of 1.55µm corresponding to an internal quantum efficiency of 1%, about two orders of magnitude higher than our previously demonstrated results [22]. We attribute this improved detection efficiency to the presence of surface roughness at the boundary between the materials forming the Schottky contact. The combination of enhanced quantum efficiency together with a simple fabrication process provides a promising platform for the realization of all silicon photodetectors and their integration with other nanophotonic and nanoplasmonic structures towards the construction of monolithic silicon opto-electronic circuitry on-chip.

Dark current suppression of MgZnO metal-semiconductor-metal solar-blind ultraviolet photodetector by asymmetric electrode structures.

PubMed

Wang, Ping; Zheng, Qinghong; Tang, Qing; Yang, Yintang; Guo, Lixin; Huang, Feng; Song, Zhenjie; Zhang, Zhiyong

2014-01-15

The application of asymmetric Schottky barrier and electrode area in an MgZnO metal-semiconductor-metal (MSM) solar-blind ultraviolet photodetector has been investigated by a physical-based numerical model in which the electron mobility is obtained by an ensemble Monte Carlo simulation combined with first principle calculations using the density functional theory. Compared with the experimental data of symmetric and asymmetric MSM structures based on ZnO substrate, the validity of this model is verified. The asymmetric Schottky barrier and electrode area devices exhibit reductions of 20 times and 1.3 times on dark current, respectively, without apparent photocurrent scarification. The plots of photo-to-dark current ratio (PDR) indicate that the asymmetric MgZnO MSM structure has better dark current characteristic than that of the symmetric one.

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

PubMed Central

Li, Jyun-Yi; Chang, Sheng-Po; Hsu, Ming-Hung; Chang, Shoou-Jinn

2017-01-01

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on–off current ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of −5 V under 290 nm illumination. PMID:28772487

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering.

PubMed

Li, Jyun-Yi; Chang, Sheng-Po; Hsu, Ming-Hung; Chang, Shoou-Jinn

2017-02-04

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on-off current ratio of 10⁵, subthreshold swing of 0.8 V/decade, and mobility of 5 cm²/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 10⁵ at a gate bias of -5 V under 290 nm illumination.

The Extreme Ultraviolet Explorer - Optics fabrication and performance

NASA Technical Reports Server (NTRS)

Green, J.; Finley, D.; Bowyer, S.; Malina, R. F.

1986-01-01

The fabrication methods, testing and evaluation techniques, and performance results are presented for the mirrors for the Extreme Ultraviolet Explorer (EUVE). The finest mirror produced to date has a measured half energy width of 8 arcsec at optical wavelengths. With a polished nickel surface, the telescope throughput was 35 percent at 44 A and 60 percent at 256 A. The surface roughness is 20 A rms.

Structure and properties of nanostructured ZnO arrays and ZnO/Ag nanocomposites fabricated by pulsed electrodeposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kopach, V. R.; Klepikova, K. S.; Klochko, N. P., E-mail: klochko-np@mail.ru

We investigate the structure, surface morphology, and optical properties of nanostructured ZnO arrays fabricated by pulsed electrodeposition, Ag nanoparticles precipitated from colloidal solutions, and a ZnO/Ag nanocomposite based on them. The electronic and electrical parameters of the ZnO arrays and ZnO/Ag nanocomposites are analyzed by studying the I–V and C–V characteristics. Optimal modes for fabricating the ZnO/Ag heterostructures with the high stability and sensitivity to ultraviolet radiation as promising materials for use in photodetectors, gas sensors, and photocatalysts are determined.

Employment of a metal microgrid as a front electrode in a sandwich-structured photodetector.

PubMed

Zhang, Junying; Cai, Chao; Pan, Feng; Hao, Weichang; Zhang, Weiwei; Wang, Tianmin

2009-07-01

A highly UV-transparent metal microgrid was prepared and employed as the front electrode in a sandwich-structured ultraviolet (UV) photodetector using TiO(2) thin film as the semiconductor layer. The photo-generated charger carriers travel a shorter distance before reaching the electrodes in comparison with a photodetector using large-spaced interdigitated metal electrodes (where distance between fingers is several to tens of micrometers) on the surface of the semiconductor film. This photodetector responds to UV light irradiation, and the photocurrent intensity increases linearly with the irradiation intensity below 0.2 mW/cm(2).

Trap-assisted large gain in Cu{sub 2}O/C{sub 60} hybrid ultraviolet/visible photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Lan; Xi, Qiaoyue; Gao, Ge

2016-04-18

Photomultiplication-type ultraviolet (UV)/visible photodetectors (PDs) are demonstrated in an electrodeposited Cu{sub 2}O/C{sub 60} hybrid structure. These simple organic/inorganic hybrid PDs exhibit external quantum efficiencies (EQEs) of 1.1 × 10{sup 4}% under illumination of 365 nm UV light at −3 V, indicating a large gain of photocurrent for these devices. Such an EQE is one of the highest values among the reported organic/inorganic hybrid PDs at the same voltage. Cu{sub 2}O and C{sub 60} are found to play different roles in realizing the photomultiplication. Copper vacancies are proposed as the defects in the electrodeposited Cu{sub 2}O layers, which can trap photogenerated holes. Such trapped holesmore » will trigger the injection of multiple electrons and hence result in the photocurrent gain of the devices while C{sub 60} primarily acts as a light absorption media to provide free holes.« less

Ultrathin (<1 μm) Substrate-Free Flexible Photodetector on Quantum Dot-Nanocellulose Paper

PubMed Central

Wu, Jingda; Lin, Lih Y.

2017-01-01

Conventional approaches to flexible optoelectronic devices typically require depositing the active materials on external substrates. This is mostly due to the weak bonding between individual molecules or nanocrystals in the active materials, which prevents sustaining a freestanding thin film. Herein we demonstrate an ultrathin freestanding ZnO quantum dot (QD) active layer with nanocellulose structuring, and its corresponding device fabrication method to achieve substrate-free flexible optoelectronic devices. The ultrathin ZnO QD-nanocellulose composite is obtained by hydrogel transfer printing and solvent-exchange processes to overcome the water capillary force which is detrimental to achieving freestanding thin films. We achieved an active nanocellulose paper with ~550 nm thickness, and >91% transparency in the visible wavelength range. The film retains the photoconductive and photoluminescent properties of ZnO QDs and is applied towards substrate-free Schottky photodetector applications. The device has an overall thickness of ~670 nm, which is the thinnest freestanding optoelectronic device to date, to the best of our knowledge, and functions as a self-powered visible-blind ultraviolet photodetector. This platform can be readily applied to other nano materials as well as other optoelectronic device applications. PMID:28266651

Photodetectors Based on Organic–Inorganic Hybrid Lead Halide Perovskites

PubMed Central

Zhou, Jiachen

2017-01-01

Abstract Recent years have witnessed skyrocketing research achievements in organic–inorganic hybrid lead halide perovskites (OIHPs) in the photovoltaic field. In addition to photovoltaics, more and more studies have focused on OIHPs‐based photodetectors in the past two years, due to the remarkable optoelectronic properties of OIHPs. This article summarizes the latest progress in this research field. To begin with, the factors influencing the performance of photodetectors are discussed, including both internal and external factors. In particular, the channel width and the incident power intensities should be taken into account to precisely and objectively evaluate and compare the output performance of different photodetectors. Next, photodetectors fabricated on single‐component perovskites in terms of different micromorphologies are discussed, namely, 3D thin‐film and single crystalline, 2D nanoplates, 1D nanowires, and 0D nanocrystals, respectively. Then, bilayer structured perovskite‐based photodetectors incorporating inorganic and organic semiconductors are discussed to improve the optoelectronic performance of their pristine counterparts. Additionally, flexible OIHPs‐based photodetectors are highlighted. Finally, a brief conclusion and outlook is given on the progress and challenges in the field of perovskites‐based photodetectors. PMID:29375959

TlBr[sub x]I[sub (1[minus]x)] photodetectors for scintillation spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shah, K.S.; Lund, J.C.; Olschner, F.

1994-12-01

This paper reports on the evaluation of photodetectors fabricated from a ternary semiconductor, TlBr[sub x]I[sub 1[minus]x] for application in scintillation spectroscopy. These photodetectors are characterized in terms of their resistivity, charge transport parameters, quantum efficiency as a function of wavelength, and finally their performance as scintillation spectrometers. The details about TlBr[sub x]I[sub 1[minus]x] purification, crystal growth and device fabrication are also addressed.

Fabrication of a novel gigabit/second free-space optical interconnect - photodetector characterization and testing and system development

NASA Technical Reports Server (NTRS)

Savich, Gregory R.

2004-01-01

The time when computing power is limited by the copper wire inherent in the computer system and not the speed of the microprocessor is rapidly approaching. With constant advances in computer technology, many researchers believe that in only a few years, optical interconnects will begin to replace copper wires in your Central Processing Unit (CPU). On a more macroscopic scale, the telecommunications industry has already made the switch to optical data transmission as, to date, fiber optic technology is the only reasonable method of reliable, long range data transmission. Within the span of a decade, we will see optical technologies move from the macroscopic world of the telecommunications industry to the microscopic world of the computer chip. Already, the communications industry is marketing commercially available optical links to connect two personal computers, thereby eliminating the need for standard and comparatively slow wired and wireless Ethernet transfers and greatly increasing the distance the computers can be separated. As processing demands continue to increase, the realm of optical communications will continue to move closer to the microprocessor and quite possibly onto the microprocessor itself. A day may come when copper connections are used only to supply power, not transfer data. This summer s work marks some of the beginning stages of a 5 to 10 year, long-term research project to create and study a free-space, 1 Gigabit/sec optical interconnect. The research will result in a novel fabricated, chip-to-chip interconnect consisting of a Vertical Cavity Surface Emitting Laser (VCSEL) Diode linked through free space to a Metal- Semiconductor-Metal (MSM) Photodetector with the possible integration of microlenses for signal focusing and Micro-Electromechanical Systems (MEMS) devices for optical signal steering. The advantages, disadvantages, and practicality of incorporating flip-chip mounting technologies will also be addressed. My work began with the

Mechanism of Excellent Photoelectric Characteristics in Mixed-Phase ZnMgO Ultraviolet Photodetectors with Single Cutoff Wavelength.

PubMed

Fan, Ming-Ming; Liu, Ke-Wei; Chen, Xing; Wang, Xiao; Zhang, Zhen-Zhong; Li, Bing-Hui; Shen, De-Zhen

2015-09-23

Mixed-phase ZnMgO (m-ZMO) thin films with a single absorption edge tuning from ∼3.9 to ∼4.8 eV were realized on a-face sapphire (a-Al2O3) by plasma-assisted molecular beam epitaxy. The small lattice mismatch of both ZnO and MgO with a-Al2O3 should be responsible for the single and controllable absorption edge. Metal-semiconductor-metal (MSM) photodetectors were fabricated based on these m-ZMO films, and the devices have the single cutoff wavelength, which can be tuned from 335 to 275 nm. These devices possess low dark current (78 pA for m-Z0.67M0.33O, 11 pA for m-Z0.59M0.41O, and 4 pA for m-Z0.39M0.61O at 40 V) and high responsivity (434 A/W for m-Z0.67M0.33O, 89.8 A/W for m-Z0.59M0.41O, and 3.7 A/W for m-Z0.39M0.61O at 40 V). Further response study reveals that the 90-10% decay time of m-Z0.67M0.33O, m-Z0.59M0.41O, and m-Z0.39M0.61O is around 37, 30, and 0.7 ms, respectively. Large amounts of heterojunction interfaces between wurtzite ZMO and cubic rock-salt ZMO could be responsible for the low dark current and high responsivity of our mixed-phase devices. The excellent comprehensive performance of m-ZMO UV photodetectors on a-Al2O3 suggests that m-ZMO UV photodetectors should have great applied potential.

2D/0D graphene hybrids for visible-blind flexible UV photodetectors.

PubMed

Tetsuka, Hiroyuki

2017-07-17

Nitrogen-functionalized graphene quantum dots (NGQDs) are attractive building blocks for optoelectronic devices because of their exceptional tunable optical absorption and fluorescence properties. Here, we developed a high-performance flexible NGQD/graphene field-effect transistor (NGQD@GFET) hybrid ultraviolet (UV) photodetector, using dimethylamine-functionalized GQDs (NMe 2 -GQDs) with a large bandgap of ca. 3.3 eV. The NMe 2 -GQD@GFET photodetector exhibits high photoresponsivity and detectivity of ca. 1.5 × 10 4  A W -1 and ca. 5.5 × 10 11 Jones, respectively, in the deep-UV region as short as 255 nm without application of a backgate voltage. The feasibility of these flexible UV photodetectors for practical application in flame alarms is also demonstrated.

Multilayer Black Phosphorus Near-Infrared Photodetectors.

PubMed

Hou, Chaojian; Yang, Lijun; Li, Bo; Zhang, Qihan; Li, Yuefeng; Yue, Qiuyang; Wang, Yang; Yang, Zhan; Dong, Lixin

2018-05-23

Black phosphorus (BP), owing to its distinguished properties, has become one of the most competitive candidates for photodetectors. However, there has been little attention paid on photo-response performance of multilayer BP nanoflakes with large layer thickness. In fact, multilayer BP nanoflakes with large layer thickness have greater potential from the fabrication viewpoint as well as due to the physical properties than single or few layer ones. In this report, the thickness-dependence of the intrinsic property of BP photodetectors in the dark was initially investigated. Then the photo-response performance (including responsivity, photo-gain, photo-switching time, noise equivalent power, and specific detectivity) of BP photodetectors with relative thicker thickness was explored under a near-infrared laser beam ( λ IR = 830 nm). Our experimental results reveal the impact of BP's thickness on the current intensity of the channel and show degenerated p-type BP is beneficial for larger current intensity. More importantly, the photo-response of our thicker BP photodetectors exhibited a larger responsivity up to 2.42 A/W than the few-layer ones and a fast response photo-switching speed (response time is ~2.5 ms) comparable to thinner BP nanoflakes was obtained, indicating BP nanoflakes with larger layer thickness are also promising for application for ultra-fast and ultra-high near-infrared photodetectors.

Electrochemical fabrication and optoelectronic properties of hybrid heterostructure of CuPc/porous GaN

NASA Astrophysics Data System (ADS)

Peng, Fei; Qin, Shuang-Jiao; Hu, Li-Feng; Wang, Juan-Ye; Yang, Jia-Mei; Chen, Xue-Qing; Pan, Ge-Bo

2016-05-01

A new hybrid heterostructure of p-type copper phthalocyanine (CuPc) and n-type porous GaN (PGaN) has been fabricated by electrophoretic deposition. The influence of CuPc concentration, electric field intensity, and deposition time on the growth of CuPc film has been explored. The as-prepared CuPc films are made of numerous nanorods. The X-ray diffraction (XRD) spectra revealed that the CuPc films are the β phase and amorphous type on pristine and porous GaN, respectively. Moreover, the prototype devices were fabricated on the basis of the CuPc/PGaN heterostructures. The devices exhibited excellent photodetector performance under ultraviolet (UV) light illumination.

All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity

PubMed Central

Liu, Xi; Gu, Leilei; Zhang, Qianpeng; Wu, Jiyuan; Long, Yunze; Fan, Zhiyong

2014-01-01

High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high photoconductive gain, responsivity and detectivity up to 3.3 × 1017 Jones. Further analysis shows that their high performance originates from the unique band-edge modulation along the nanowire axial direction, where the existence of Schottky barriers in series leads to highly suppressed dark current of the device and also gives rise to fast photoelectric response to low-intensity optical signal owing to barrier height modulation. The discovered rationale in this work can be utilized as guideline to design high-performance photodetectors with other nanomaterial systems. The developed fabrication scheme opens up possibility for future flexible and high-performance integrated optoelectronic sensor circuitry. PMID:24898081

All-printable band-edge modulated ZnO nanowire photodetectors with ultra-high detectivity.

PubMed

Liu, Xi; Gu, Leilei; Zhang, Qianpeng; Wu, Jiyuan; Long, Yunze; Fan, Zhiyong

2014-06-05

High-performance photodetectors are critical for high-speed optical communication and environmental sensing, and flexible photodetectors can be used for a wide range of portable or wearable applications. Here we demonstrate the all-printable fabrication of polycrystalline nanowire-based high-performance photodetectors on flexible substrates. Systematic investigations have shown their ultra-high photoconductive gain, responsivity and detectivity up to 3.3 × 10(17) Jones. Further analysis shows that their high performance originates from the unique band-edge modulation along the nanowire axial direction, where the existence of Schottky barriers in series leads to highly suppressed dark current of the device and also gives rise to fast photoelectric response to low-intensity optical signal owing to barrier height modulation. The discovered rationale in this work can be utilized as guideline to design high-performance photodetectors with other nanomaterial systems. The developed fabrication scheme opens up possibility for future flexible and high-performance integrated optoelectronic sensor circuitry.

Universal Strategy To Reduce Noise Current for Sensitive Organic Photodetectors.

PubMed

Xiong, Sixing; Li, Lingliang; Qin, Fei; Mao, Lin; Luo, Bangwu; Jiang, Youyu; Li, Zaifang; Huang, Jinsong; Zhou, Yinhua

2017-03-15

Low noise current is critical for achieving high-detectivity organic photodetectors. Inserting charge-blocking layers is an effective approach to suppress the reverse-biased dark current. However, in solution-processed organic photodetectors, the charge-transport material needs to be dissolved in solvents that do not dissolve the underneath light-absorbing layer, which is not always possible for all kinds of light-absorbing materials developed. Here, we introduce a universal strategy of transfer-printing a conjugated polymer, poly(3-hexylthiophene) (P3HT), as the electron-blocking layer to realize highly sensitive photodetectors. The transfer-printed P3HT layers substantially and universally reduced the reverse-biased dark current by about 3 orders of magnitude for various photodetectors with different active layers. These photodetectors can detect the light signal as weak as several picowatts per square centimeter, and the device detectivity is over 10 12 Jones. The results suggest that the strategy of transfer-printing P3HT films as the electron-blocking layer is universal and effective for the fabrication of sensitive organic photodetectors.

Reduction of ultraviolet transmission through cotton T-shirt fabrics with low ultraviolet protection by various laundering methods and dyeing: clinical implications.

PubMed

Wang, S Q; Kopf, A W; Marx, J; Bogdan, A; Polsky, D; Bart, R S

2001-05-01

The public has long been instructed to wear protective clothing against ultraviolet (UV) damage. Our purpose was to determine the UV protection factor (UPF) of two cotton fabrics used in the manufacture of summer T-shirts and to explore methods that could improve the UPF of these fabrics. Each of the two types of white cotton fabrics (cotton T-shirt and mercerized cotton print cloth) used in this study was divided into 4 treatment groups: (1) water-only (machine washed with water), (2) detergent-only (washed with detergent), (3) detergent-UV absorber (washed with detergent and a UV absorber), and (4) dyes (dyed fabrics). Ultraviolet transmission through the fabrics was measured with a spectrophotometer before and after laundry and dyeing treatments. Based on UV transmission through these fabrics, the UPF values were calculated. Before any treatments, the mean UPFs were 4.94 for the T-shirt fabric and 3.13 for the print cloth. There was greater UVA (320-400 nm) than UVB (280-320 nm) transmission through these fabrics. After 5 washings with water alone and with detergent alone, UPF increased by 51% and 17%, respectively, for the cotton T-shirt fabric. Washing the T-shirt fabrics with detergent plus the UV-absorbing agent increased the UPF by 407% after 5 treatments. Dyeing the fabric blue or yellow increased the UPF by 544% and 212%, respectively. Similar changes in UPFs were observed for the print cloth fabric. The two cotton fabrics used in this study offered limited protection against UV radiation as determined by spectrophotometric analysis. Laundering with detergent and water improves UPF slightly by causing fabric shrinkage. Dyeing fabrics or adding a UV-absorbing agent during laundering substantially reduces UV transmission and increases UPF. More UVA is transmitted through the fabrics than UVB.

Silicon-graphene conductive photodetector with ultra-high responsivity

PubMed Central

Liu, Jingjing; Yin, Yanlong; Yu, Longhai; Shi, Yaocheng; Liang, Di; Dai, Daoxin

2017-01-01

Graphene is attractive for realizing optoelectronic devices, including photodetectors because of the unique advantages. It can easily co-work with other semiconductors to form a Schottky junction, in which the photo-carrier generated by light absorption in the semiconductor might be transported to the graphene layer efficiently by the build-in field. It changes the graphene conduction greatly and provides the possibility of realizing a graphene-based conductive-mode photodetector. Here we design and demonstrate a silicon-graphene conductive photodetector with improved responsivity and response speed. An electrical-circuit model is established and the graphene-sheet pattern is designed optimally for maximizing the responsivity. The fabricated silicon-graphene conductive photodetector shows a responsivity of up to ~105 A/W at room temperature (27 °C) and the response time is as short as ~30 μs. The temperature dependence of the silicon-graphene conductive photodetector is studied for the first time. It is shown that the silicon-graphene conductive photodetector has ultra-high responsivity when operating at low temperature, which provides the possibility to detect extremely weak optical power. For example, the device can detect an input optical power as low as 6.2 pW with the responsivity as high as 2.4 × 107 A/W when operating at −25 °C in our experiment. PMID:28106084

Enhancement of UV photodetector properties of ZnO nanorods/PEDOT:PSS Schottky junction by NGQD sensitization along with conductivity improvement of PEDOT:PSS by DMSO additive

NASA Astrophysics Data System (ADS)

Dhar, Saurab; Majumder, Tanmoy; Chakraborty, Pinak; Mondal, Suvra Prakash

2018-04-01

Schottky junction ultraviolet (UV) photodetector was fabricated by spin coating a hole conducting polymer, poly 3,4-ethylenedioxythiophene: polystyrene sulfonate (PEDOT:PSS) on hydrothermally grown zinc oxide (ZnO) nanorod arrays. The UV detector performance was significantly improved two step process. Firstly, ZnO nanorods were modified by sensitizing N doped grapheme quantum dots (NGQDs) for better photoresponce behavior. Afterwards, the junction properties as well as photoresponse was enhanced by modifying electrical conductivity of PEDOT:PSS layer with organic solvent (DMSO). Our NGQD decorated ZnO NRs/DMSO-PEDOT:PSS Schottky junction device demonstrated superior external quantum efficiency (EQE ˜ 90063 %) and responsivity (Rλ˜247 A/W) at 340 nm wavelength and -1V external bias. The response and recovery times of the final photodetector device was very fast compared to GQD as well as NGQD modified and pristine ZnO nanorod based detectors.

Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact

DOE Office of Scientific and Technical Information (OSTI.GOV)

Babichev, A. V., E-mail: A.Babichev@mail.ioffe.ru; Zhang, H.; Guan, N.

2016-08-15

We report the fabrication and optical and electrical characterization of photodetectors for the UV spectral range based on single p–n junction nanowires with a transparent contact of a new type. The contact is based on CVD-grown (chemical-vapor deposition) graphene. The active region of the nitride nanowires contains a set of 30 radial In{sub 0.18}Ga{sub 0.82}N/GaN quantum wells. The structure is grown by metal-organic vaporphase epitaxy. The photodetectors are fabricated using electron-beam lithography. The current–voltage characteristics exhibit a rectifying behavior. The spectral sensitivity of the photodetector is recorded starting from 3 eV and extending far in the UV range. The maximalmore » photoresponse is observed at a wavelength of 367 nm (sensitivity 1.9 mA/W). The response switching time of the photodetector is less than 0.1 s.« less

High- and Reproducible-Performance Graphene/II-VI Semiconductor Film Hybrid Photodetectors

PubMed Central

Huang, Fan; Jia, Feixiang; Cai, Caoyuan; Xu, Zhihao; Wu, Congjun; Ma, Yang; Fei, Guangtao; Wang, Min

2016-01-01

High- and reproducible-performance photodetectors are critical to the development of many technologies, which mainly include one-dimensional (1D) nanostructure based and film based photodetectors. The former suffer from a huge performance variation because the performance is quite sensitive to the synthesis microenvironment of 1D nanostructure. Herein, we show that the graphene/semiconductor film hybrid photodetectors not only possess a high performance but also have a reproducible performance. As a demo, the as-produced graphene/ZnS film hybrid photodetector shows a high responsivity of 1.7 × 107 A/W and a fast response speed of 50 ms, and shows a highly reproducible performance, in terms of narrow distribution of photocurrent (38–65 μA) and response speed (40–60 ms) for 20 devices. Graphene/ZnSe film and graphene/CdSe film hybrid photodetectors fabricated by this method also show a high and reproducible performance. The general method is compatible with the conventional planar process, and would be easily standardized and thus pay a way for the photodetector applications. PMID:27349692

Strain-compensated infrared photodetector and photodetector array

DOEpatents

Kim, Jin K; Hawkins, Samuel D; Klem, John F; Cich, Michael J

2013-05-28

A photodetector is disclosed for the detection of infrared light with a long cutoff wavelength in the range of about 4.5-10 microns. The photodetector, which can be formed on a semiconductor substrate as an nBn device, has a light absorbing region which includes InAsSb light-absorbing layers and tensile-strained layers interspersed between the InAsSb light-absorbing layers. The tensile-strained layers can be formed from GaAs, InAs, InGaAs or a combination of these III-V compound semiconductor materials. A barrier layer in the photodetector can be formed from AlAsSb or AlGaAsSb; and a contact layer in the photodetector can be formed from InAs, GaSb or InAsSb. The photodetector is useful as an individual device, or to form a focal plane array.

Self-assembled KCu7S4 nanowire monolayers for self-powered near-infrared photodetectors.

PubMed

Wang, You-Yi; Wu, Ya-Dong; Peng, Wei; Song, Yong-Hong; Wang, Bao; Wu, Chun-Yan; Lu, Yang

2018-06-13

Near infrared light (NIR) photodetectors based on one-dimensional semiconductor nanowires have generated considerable interest due to their practical application in versatile fields. We present a facile yet efficient approach to rationally integrating KCu7S4 semiconductor nanowires by the Langmuir-Blodgett (LB) technique. A self-powered near infrared (NIR) light photodetector is fabricated by transferring a close-packed KCu7S4 nanowire monolayer to the surface of a silicon wafer. The as-fabricated Si/KCu7S4 heterojunction with a close-packed and well-aligned nanowire array exhibits splendid photovoltaic performance when illuminated by NIR light, allowing the detection of NIR light without an exterior power supply. The photodetector exhibits a high sensitivity to NIR light (980 nm, 295.3 μW cm-2) with responsivity (R) 15 mA W-1 and detectivity (D*) 2.15 × 1012 cm Hz1/2 W-1. Significantly, the device shows the capability to work under high pulsed light irradiation up to 50 kHz with a high-speed response (response time τr 7.4 μs and recovery time τf 8.6 μs). This facilitates the fabrication of low-cost and high-speed photodetectors and integrated optoelectronic sensor circuitry.

Chalcogenide glass waveguide-integrated black phosphorus mid-infrared photodetectors

NASA Astrophysics Data System (ADS)

Deckoff-Jones, Skylar; Lin, Hongtao; Kita, Derek; Zheng, Hanyu; Li, Duanhui; Zhang, Wei; Hu, Juejun

2018-04-01

Black phosphorus (BP) is a promising 2D material that has unique in-plane anisotropy and a 0.3 eV direct bandgap, making it an attractive material for mid-IR photodetectors. So far, waveguide integrated BP photodetectors have been limited to the near-IR on top of Si waveguides that are unable to account for BP’s crystalline orientation. In this work, we employ mid-IR transparent chalcogenide glass (ChG) both as a broadband mid-IR transparent waveguiding material to enable waveguide-integration of BP detectors, and as a passivation layer to prevent BP degradation during device processing as well as in ambient atmosphere post-fabrication. Our ChG-on-BP approach not only leads to the first demonstration of mid-IR waveguide-integrated BP detectors, but also allows us to fabricate devices along different crystalline axes of BP to investigate, for the first time, the impact of in-plane anisotropy on photoresponse of waveguide-integrated devices. The best device exhibits responsivity up to 40 mA W-1 and noise equivalent power as low as 30 pW Hz-1/2 at 2185 nm wavelength. We also found that photodetector responsivities changed by an order of magnitude with different BP orientations. This work validates BP as an effective photodetector material in the mid-IR, and demonstrates the power of the glass-on-2D-material platform for prototyping of 2D material photonic devices.

High-performance zero-bias ultraviolet photodetector based on p-GaN/n-ZnO heterojunction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Su, Longxing; Zhang, Quanlin; Chen, Mingming

2014-08-18

Lattice-match p-GaN and n-ZnO bilayers were heteroepitaxially grown on the c-sapphire substrate by metal organic chemical vapor deposition and molecular beam epitaxy technique, respectively. X-ray diffraction and photoluminescence investigations revealed the high crystal quality of the bilayer films. Subsequently, a p-GaN/n-ZnO heterojunction photodetector was fabricated. The p-n junction exhibited a clear rectifying I-V characteristic with a turn-on voltage of 3.7 V. At zero-bias voltage, the peak responsivity was 0.68 mA/W at 358 nm, which is one of the best performances reported for p-GaN/n-ZnO heterojunction detectors due to the excellent crystal quality of the bilayer films. These show that the high-performance p-GaN/n-ZnO heterojunction diodemore » is potential for applications of portable UV detectors without driving power.« less

Organic photodetectors and their applications for hemispherical imaging focal plane arrays

NASA Astrophysics Data System (ADS)

Xu, Xin

Softness of organic semiconducting materials holds promise for fabricating optoelectronic devices and circuits on nonplanar surfaces. The low growth temperature of organic small molecules also allows for the deposition onto a plastic substrate, which has the potential for significantly lowering the fabrication cost. However, the softness of organic small molecules can become problematic. Most of the well-established patterning techniques in the semiconductor industry are not suitable for patterning organic-based devices. High temperatures, high pressures, exposure to wet chemicals or high-energy particles that may exist in the conventional patterning approaches can damage the organic active layers. Although methods for large area patterning of organic electronics onto planar substrates have been demonstrated, in this thesis we extend the patterning capability to curved surfaces by using a novel three dimensional (3D) cold welding method. We use 3D cold welding to fabricate a hemispherical focal plane array (FPA) for compact imaging systems that mimic the architecture and function of the human eye. A 10 kilopixel organic photodetector FPA is thus demonstrated on a 1 cm radius hemisphere. By patterning brittle yet transparent indium tin oxide anodes instead of semitransparent metal anodes on the hemispheres, the detectivity of the FPA is improved. We introduce a sensitive hybrid photodetector employing a carbon nanotube/small molecular organic junction with a broad spectral response extending into the near infrared. Since the photodetector array shows an increased noise level with the array size, integrated arrays of organic photodetectors and thin film transistors as switches are demonstrated.

CdS-Nanowires Flexible Photo-detector with Ag-Nanowires Electrode Based on Non-transfer Process

PubMed Central

Pei, Yanli; Pei, Ruihan; Liang, Xiaoci; Wang, Yuhao; Liu, Ling; Chen, Haibiao; Liang, Jun

2016-01-01

In this study, UV-visible flexible resistivity-type photo-detectors were demonstrated with CdS-nanowires (NWs) percolation network channel and Ag-NWs percolation network electrode. The devices were fabricated on Mixed Cellulose Esters (MCE) membrane using a lithographic filtration method combined with a facile non-transfer process. The photo-detectors demonstrated strong adhesion, fast response time, fast decay time, and high photo sensitivity. The high performance could be attributed to the high quality single crystalline CdS-NWs, encapsulation of NWs in MCE matrix and excellent interconnection of the NWs. Furthermore, the sensing performance was maintained even the device was bent at an angle of 90°. This research may pave the way for the facile fabrication of flexible photo-detectors with high performances. PMID:26899726

High-speed 1.3 -1.55 um InGaAs/InP PIN photodetector for microwave photonics

NASA Astrophysics Data System (ADS)

Kozyreva, O. A.; Solov'ev, Y. V.; Polukhin, I. S.; Mikhailov, A. K.; Mikhailovskiy, G. A.; Odnoblyudov, M. A.; Gareev, E. Z.; Kolodeznyi, E. S.; Novikov, I. I.; Karachinsky, L. Ya; Egorov, A. Yu; Bougrov, V. E.

2017-11-01

We have fabricated the 1.3-1.55 um PIN photodetector based on InGaAs/InP heterostructure. Measurement results of optical and electrical characteristics of PIN photodetector chip were the following: photoconductivity at 1550 nm was 0.65 A/W and internal capacitance was 0.025 pF. Microwave model of photodetector was developed and verified by measurements of scattering matrix. The implementation of broadband (up to 20 GHz) hybrid integrated matching and biasing circuit for high-speed photodetector is presented.

Determination of organic compounds in water using ultraviolet LED

NASA Astrophysics Data System (ADS)

Kim, Chihoon; Ji, Taeksoo; Eom, Joo Beom

2018-04-01

This paper describes a method of detecting organic compounds in water using an ultraviolet LED (280 nm) spectroscopy system and a photodetector. The LED spectroscopy system showed a high correlation between the concentration of the prepared potassium hydrogen phthalate and that calculated by multiple linear regression, indicating an adjusted coefficient of determination ranging from 0.953-0.993. In addition, a comparison between the performance of the spectroscopy system and the total organic carbon analyzer indicated that the difference in concentration was small. Based on the close correlation between the spectroscopy and photodetector absorbance values, organic measurement with a photodetector could be configured for monitoring.

High-Switching-Ratio Photodetectors Based on Perovskite CH₃NH₃PbI₃ Nanowires.

PubMed

Zhang, Xin; Liu, Caichi; Ren, Gang; Li, Shiyun; Bi, Chenghao; Hao, Qiuyan; Liu, Hui

2018-05-10

Hybrid organic-inorganic perovskite materials have attracted extensive attention due to their impressive performance in photovoltaic devices. One-dimensional perovskite CH₃NH₃PbI₃ nanomaterials, possessing unique structural features such as large surface-to-volume ratio, anisotropic geometry and quantum confinement, may have excellent optoelectronic properties, which could be utilized to fabricate high-performance photodetectors. However, in comparison to CH₃NH₃PbI₃ thin films, reports on the fabrication of CH₃NH₃PbI₃ nanowires for optoelectrical application are rather limited. Herein, a two-step spin-coating process has been utilized to fabricate pure-phase and single-crystalline CH₃NH₃PbI₃ nanowires on a substrate without mesoporous TiO₂ or Al₂O₃. The size and density of CH₃NH₃PbI₃ nanowires can be easily controlled by changing the PbI₂ precursor concentration. The as-prepared CH₃NH₃PbI₃ nanowires are utilized to fabricate photodetectors, which exhibit a fairly high switching ratio of ~600, a responsivity of 55 mA/W, and a normalized detectivity of 0.5 × 10 11 jones under 532 nm light illumination (40 mW/cm²) at a very low bias voltage of 0.1 V. The as-prepared perovskite CH₃NH₃PbI₃ nanowires with excellent optoelectronic properties are regarded to be a potential candidate for high-performance photodetector application.

Energy transfer ultraviolet photodetector with 8-hydroxyquinoline derivative-metal complexes as acceptors

NASA Astrophysics Data System (ADS)

Wu, Shuang-Hong; Li, Wen-Lian; Chen, Zhi; Li, Shi-Bin; Wang, Xiao-Hui; Wei, Xiong-Bang

2015-02-01

We choose 8-hydroxyquinoline derivative-metal complexes (Beq, Mgq, and Znq) as the acceptors (A) and 4,4',4”-tri-(2-methylphenyl phenylamino) triphenylaine (m-MTDATA) as the donor (D) respectively to study the existing energy transfer process in the organic ultraviolet (UV) photodetector (PD), which has an important influence on the sensitivity of PDs. The energy transfer process from D to A without exciplex formation is discussed, differing from the working mechanism of previous PDs with Gaq [Zisheng Su, Wenlian Li, Bei Chu, Tianle Li, Jianzhuo Zhu, Guang Zhang, Fei Yan, Xiao Li, Yiren Chen and Chun-Sing Lee 2008 Appl. Phys. Lett. 93 103309)] and REq [J. B. Wang, W. L. Li, B. Chu, L. L. Chen, G. Zhang, Z. S. Su, Y. R. Chen, D. F. Yang, J. Z. Zhu, S. H. Wu, F. Yan, H. H. Liu, C. S. Lee 2010 Org. Electron. 11 1301] used as an A material. Under 365-nm UV irradiation with an intensity of 1.2 mW/cm2, the m-MTDATA:Beq blend device with a weight ratio of 1:1 shows a response of 192 mA/W with a detectivity of 6.5× 1011 Jones, which exceeds those of PDs based on Mgq (146 mA/W) and Znq (182 mA/W) due to better energy level alignment between m-MTDATA/Beq and lower radiative decay. More photophysics processes of the PDs involved are discussed in detail. Project supported by the National Natural Science Foundation of China (Grant Nos. 61371046, 61405026, 61474016, and 61421002) and China Postdoctoral Science Foundation (Grant No. 2014M552330).

High-performance Schottky heterojunction photodetector with directly grown graphene nanowalls as electrodes.

PubMed

Shen, Jun; Liu, Xiangzhi; Song, Xuefen; Li, Xinming; Wang, Jun; Zhou, Quan; Luo, Shi; Feng, Wenlin; Wei, Xingzhan; Lu, Shirong; Feng, Shuanglong; Du, Chunlei; Wang, Yuefeng; Shi, Haofei; Wei, Dapeng

2017-05-11

Schottky heterojunctions based on graphene-silicon structures are promising for high-performance photodetectors. However, existing fabrication processes adopt transferred graphene as electrodes, limiting process compatibility and generating pollution because of the metal catalyst. In this report, photodetectors are fabricated using directly grown graphene nanowalls (GNWs) as electrodes. Due to the metal-free growth process, GNWs-Si heterojunctions with an ultralow measured current noise of 3.1 fA Hz -1/2 are obtained, and the as-prepared photodetectors demonstrate specific detectivities of 5.88 × 10 13 cm Hz 1/2 W -1 and 2.27 × 10 14 cm Hz 1/2 W -1 based on the measured and calculated noise current, respectively, under ambient conditions. These are among the highest reported values for planar silicon Schottky photodetectors. In addition, an on/off ratio of 2 × 10 7 , time response of 40 μs, cut-off frequency of 8.5 kHz and responsivity of 0.52 A W -1 are simultaneously realized. The ultralow current noise is attributed to the excellent junction quality with a barrier height of 0.69 eV and an ideal factor of 1.18. Furthermore, obvious infrared photoresponse is observed in blackbody tests, and potential applications based on the photo-thermionic effect are discussed.

Growth and characterization of β-Ga2O3 thin films by molecular beam epitaxy for deep-UV photodetectors

NASA Astrophysics Data System (ADS)

Ghose, Susmita; Rahman, Shafiqur; Hong, Liang; Rojas-Ramirez, Juan Salvador; Jin, Hanbyul; Park, Kibog; Klie, Robert; Droopad, Ravi

2017-09-01

The growth of high quality epitaxial beta-gallium oxide (β-Ga2O3) using a compound source by molecular beam epitaxy has been demonstrated on c-plane sapphire (Al2O3) substrates. The compound source provides oxidized gallium molecules in addition to oxygen when heated from an iridium crucible in a high temperature effusion cell enabling a lower heat of formation for the growth of Ga2O3, resulting in a more efficient growth process. This source also enabled the growth of crystalline β-Ga2O3 without the need for additional oxygen. The influence of the substrate temperatures on the crystal structure and quality, chemical bonding, surface morphology, and optical properties has been systematically evaluated by x-ray diffraction, scanning transmission electron microscopy, x-ray photoelectron spectroscopy, atomic force microscopy, spectroscopic ellipsometry, and UV-vis spectroscopy. Under optimized growth conditions, all films exhibited pure (" separators="|2 ¯01 ) oriented β-Ga2O3 thin films with six-fold rotational symmetry when grown on a sapphire substrate. The thin films demonstrated significant absorption in the deep-ultraviolet (UV) region with an optical bandgap around 5.0 eV and a refractive index of 1.9. A deep-UV photodetector fabricated on the high quality β-Ga2O3 thin film exhibits high resistance and small dark current (4.25 nA) with expected photoresponse for 254 nm UV light irradiation suggesting that the material grown using the compound source is a potential candidate for deep-ultraviolet photodetectors.

Flexible low-cost infrared photodetector based on SnS thin film grown by chemical bath deposition

NASA Astrophysics Data System (ADS)

Mahdi, Mohamed S.; Ibrahim, K.; Ahmed, Naser M.; Kadhim, A.; Azzez, Shrook A.; Mustafa, Falah I.; Bououdina, M.

2017-10-01

A novel, flexible, and low-cost infrared (IR) SnS photodetector was fabricated onto a polyethylene terephthalate (PET) substrate by a simple approach based on chemical bath deposition. X-ray diffraction analysis confirmed an orthorhombic structure, scanning electron microscopy observations revealed flower-like morphology, and UV-vis spectroscopy indicated a direct energy gap of 1.42 eV. The photodetector exhibited maximum responsivity at 850 nm under the illumination of a Hg (Xe) lamp. The photoresponse properties of the photodetector were determined under illumination of 850 nm at various bias voltages (3, 5 and 7 V). The photodetector manifested good sensitivity, excellent reproducibility and fast response time. Both rise/decay times measured at bias voltage of 3 V were determined: τ rise  =  0.38 s and τ decay  =  0.67 s. Additionally, the photoresponse versus different power density of illumination was also measured. The as-obtained results, highlighted that the newly fabricated SnS photodetector can be considered as a promising photoelectronic device that can be effectively used in the IR region due to its excellent photoresponce characteristics, low cost, flexibility, and non-toxicity.

Compositional inhomogeneities in AlGaN thin films grown by molecular beam epitaxy: Effect on MSM UV photodetectors

NASA Astrophysics Data System (ADS)

Pramanik, Pallabi; Sen, Sayantani; Singha, Chirantan; Roy, Abhra Shankar; Das, Alakananda; Sen, Susanta; Bhattacharyya, A.

2016-10-01

Ultraviolet (UV) MSM photodetectors (PD) based on AlGaN alloys find many applications, including flame sensing. In this work we investigate the dependence of AlGaN based photodetectors grown by MBE on the kinetics of growth. MSM photodetectors were fabricated in the interdigitated configuration with Ni/Au contacts having 400 μm finger length and 10 μm finger spacing. Bulk Al0.4Ga0.6N films were grown on to sapphire substrates using an AlN buffer layer. A series of PDs were developed using the Al0.4Ga0.6N films grown under different group III/V flux ratios ranging from stoichiometric conditions to much higher than unity. Upon testing, it was observed that the otherwise identical photodetectors show significant decrease in dark current as AlGaN deposition conditions change from stoichiometric to excess group III, due to reduction of unintentional incorporation of oxygen-related point defects. In addition, the intensity and spectral dependence of the photocurrent also change, showing an extended low energy tail for the former and a sharp and prominent excitonic peak for the latter. The optical transmission measurements indicate a variation in Urbach energy with deposition conditions of the AlGaN films, although they have the same absorption edge. While all samples show a single red-shifted photoluminescence peak at room temperature, upon cooling, multiple higher energy peaks appear in the photoluminescence (PL) spectra, indicating that the alloys contain complex compositional inhomogeneities. Two types of alloy fluctuations, determined by the growth conditions, have been identified that modulate the optoelectronic properties of AlGaN by changing the spatial localization of excitons, thereby altering their stability. We identified that growth under stoichiometric conditions leads to compositional inhomogeneities that play a detrimental role in the operation of MSM photodetectors, which reduces the sharpness of the sensitivity edge, while growth under excess metal

Polarization Enhanced Charge Transfer: Dual-Band GaN-Based Plasmonic Photodetector.

PubMed

Jia, Ran; Zhao, Dongfang; Gao, Naikun; Liu, Duo

2017-01-13

Here, we report a dual-band plasmonic photodetector based on Ga-polar gallium nitride (GaN) for highly sensitive detection of UV and green light. We discover that decoration of Au nanoparticles (NPs) drastically increases the photoelectric responsivities by more than 50 times in comparition to the blank GaN photodetector. The observed behaviors are attributed to polarization enhanced charge transfer of optically excited hot electrons from Au NPs to GaN driven by the strong spontaneous polarization field of Ga-polar GaN. Moreover, defect ionization promoted by localized surface plasmon resonances (LSPRs) is also discussed. This novel type of photodetector may shed light on the design and fabrication of photoelectric devices based on polar semiconductors and microstructural defects.

Plasma enhanced ultrastable self-powered visible-blind deep ultraviolet photodetector based on atomically thin boron nitride sheets

NASA Astrophysics Data System (ADS)

Feng, Peter Xianping; Rivera, Manuel; Velazquez, Rafael; Aldalbahi, Ali

We extend our work on the use of digitally controlled plasma deposition technique to synthesize high quality boron nitride nanosheets (BNNSs). The nanoscale morphologies and layered growth characteristics of the BNNSs were characterized using scanning electron microscope, transmission electron microscopy, and atomic force microscopy. The experimental data indicated each sample consists of multiple atomically thin, highly transparent BNNSs that overlap one another with certain orientations. Purity and structural properties were characterized by Raman scattering, XRD, FTIR and XPS. Based on these characterizations, 2D BNNSs based self-powered, visible blind deep UV detectors were designed, fabricated, and tested. The bias, temperature, and humidity effects on the photocurrent strength were investigated. A significant increase of signal-to-noise ratio after plasma treatment was observed. The fabricated photodetectors presented exceptional properties: a very stable baseline and a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, a high signal-to-noise ratio, and excellent repeatability even when the operating temperature was up to 400 0C. The shift in cutoff wavelength was also observed. This work is supported by the Army Research Office/DoD Grant (62826-RT-REP) and the ISPP#0058 at King Saud University.

High-performance Ge p-i-n photodetector on Si substrate

NASA Astrophysics Data System (ADS)

Chen, Li-qun; Huang, Xiang-ying; Li, Min; Huang, Yan-hua; Wang, Yue-yun; Yan, Guang-ming; Li, Cheng

2015-05-01

High-performance and tensile-strained germanium (Ge) p-i-n photodetector is demonstrated on Si substrate. The epitaxial Ge layers were prepared in an ultrahigh vacuum chemical vapor deposition (UHV-CVD) system using low temperature Ge buffer technique. The devices were fabricated by in situ doping and using Si as passivation layer between Ge and metal, which can improve the ohmic contact and realize the high doping. The results show that the dark current of the photodetector with diameter of 24 μm is about 2.5×10-7 μA at the bias voltage of -1 V, and the optical responsivity is 0.1 A/W at wavelength of 1.55 μm. The 3 dB bandwidth (BW) of 4 GHz is obtained for the photodetector with diameter of 24 μm at reverse bias voltage of 1 V. The long diffusion time of minority carrier in n-type Ge and the large contact resistance in metal/Ge contacts both affect the performance of Ge photodetectors.

Significant Enhancement of MgZnO Metal-Semiconductor-Metal Photodetectors via Coupling with Pt Nanoparticle Surface Plasmons

NASA Astrophysics Data System (ADS)

Guo, Zexuan; Jiang, Dayong; Hu, Nan; Yang, Xiaojiang; Zhang, Wei; Duan, Yuhan; Gao, Shang; Liang, Qingcheng; Zheng, Tao; Lv, Jingwen

2018-06-01

We proposed and demonstrated MgZnO metal-semiconductor-metal (MSM) ultraviolet photodetectors (UV) assisted with surface plasmons (SPs) prepared by the radio frequency magnetron sputtering deposition method. After the decoration of their surface with Pt nanoparticles (NPs), the responsivity of all the electrode spacing (3, 5, and 8 μm) photodetectors were enhanced dramatically; to our surprise, comparing with them the responsivity of larger spacing sample, more SPs were gathered which are smaller than others in turn. A physical mechanism focused on SPs and depletion width is given to explain the above results.

Augmented Quantum Yield of a 2D Monolayer Photodetector by Surface Plasmon Coupling.

PubMed

Bang, Seungho; Duong, Ngoc Thanh; Lee, Jubok; Cho, Yoo Hyun; Oh, Hye Min; Kim, Hyun; Yun, Seok Joon; Park, Chulho; Kwon, Min-Ki; Kim, Ja-Yeon; Kim, Jeongyong; Jeong, Mun Seok

2018-04-11

Monolayer (1L) transition metal dichalcogenides (TMDCs) are promising materials for nanoscale optoelectronic devices because of their direct band gap and wide absorption range (ultraviolet to infrared). However, 1L-TMDCs cannot be easily utilized for practical optoelectronic device applications (e.g., photodetectors, solar cells, and light-emitting diodes) because of their extremely low optical quantum yields (QYs). In this investigation, a high-gain 1L-MoS 2 photodetector was successfully realized, based on the surface plasmon (SP) of the Ag nanowire (NW) network. Through systematic optical characterization of the hybrid structure consisting of a 1L-MoS 2 and the Ag NW network, it was determined that a strong SP and strain relaxation effect influenced a greatly enhanced optical QY. The photoluminescence (PL) emission was drastically increased by a factor of 560, and the main peak was shifted to the neutral exciton of 1L-MoS 2 . Consequently, the overall photocurrent of the hybrid 1L-MoS 2 photodetector was observed to be 250 times better than that of the pristine 1L-MoS 2 photodetector. In addition, the photoresponsivity and photodetectivity of the hybrid photodetector were effectively improved by a factor of ∼1000. This study provides a new approach for realizing highly efficient optoelectronic devices based on TMDCs.

Transparent, broadband, flexible, and bifacial-operable photodetectors containing a large-area graphene-gold oxide heterojunction.

PubMed

Liu, Yu-Lun; Yu, Chen-Chieh; Lin, Keng-Te; Yang, Tai-Chi; Wang, En-Yun; Chen, Hsuen-Li; Chen, Li-Chyong; Chen, Kuei-Hsien

2015-05-26

In this study, we combine graphene with gold oxide (AuOx), a transparent and high-work-function electrode material, to achieve a high-efficient, low-bias, large-area, flexible, transparent, broadband, and bifacial-operable photodetector. The photodetector operates through hot electrons being generated in the graphene and charge separation occurring at the AuOx-graphene heterojunction. The large-area graphene covering the AuOx electrode efficiently prevented reduction of its surface; it also acted as a square-centimeter-scale active area for light harvesting and photodetection. Our graphene/AuOx photodetector displays high responsivity under low-intensity light illumination, demonstrating picowatt sensitivity in the ultraviolet regime and nanowatt sensitivity in the infrared regime for optical telecommunication. In addition, this photodetector not only exhibited broadband (from UV to IR) high responsivity-3300 A W(-1) at 310 nm (UV), 58 A W(-1) at 500 nm (visible), and 9 A W(-1) at 1550 nm (IR)-but also required only a low applied bias (0.1 V). The hot-carrier-assisted photoresponse was excellent, especially in the short-wavelength regime. In addition, the graphene/AuOx photodetector exhibited great flexibility and stability. Moreover, such vertical heterojunction-based graphene/AuOx photodetectors should be compatible with other transparent optoelectronic devices, suggesting applications in flexible and wearable optoelectronic technologies.

GaN/AlGaN Strain-Balanced Heterostructures for Near-IR Quantum Well Photodetectors

DTIC Science & Technology

2003-12-03

of Leeds as follows: The contractor will design, fabricate, and analyze Quantum Well Infrared Photodetectors (QWIP) that detect in the 2-6 micron...SUBJECT TERMS EOARD, Sensor Technology, infrared technology, Gallium Nitride, Quantum Well Devices 16. SECURITY CLASSIFICATION OF: 19a. NAME OF...resulting from these collaborations are the first quantum well infrared photodetectors based in the GaN material system to be reported. 1 1. In accordance

MOVPE of GaSb/InGaAsSb Multilayers and Fabrication of Dual Band Photodetectors

NASA Technical Reports Server (NTRS)

Xiao, Ye-Gao; Bhat, Ishwara; Refaat, Tamer F.; Abedin, M. Nurul; Shao, Qing-Hui

2005-01-01

Metalorganic vapor phase epitaxy (MOVPE) of GaSb/InGaAsSb multilayer thin films and fabrication of bias-selectable dual band photodetectors are reported. For the dual band photodetectors the short wavelength detector, or the upper p- GaSb/n-GaSb junction photodiode, is placed optically ahead of the long wavelength one, or the lower photodiode. The latter is based on latticed-matched In0.13Ga0.87As0.11Sb0.89 with bandgap near 0.6 eV. Specifically, high quality multilayer thin films are grown sequentially from top to bottom as p+-GaSb/p-GaSb/n-GaSb/n-InGaAsSb/p-InGaAsSb/p-GaSb on undoped p-type GaSb substrate, and as n-GaSb/p-GaSb/p-InGaAsSb/n-InGaAsSb/n-GaSb on Te-doped n-type GaSb substrate respectively. The multilayer thin films are characterized by optical microscope, atomic force microscope (AFM), electron microprobe analyses etc. The photodiode mesa steps are patterned by photolithography with wet chemical etching and the front metallization is carried out by e-beam evaporation with Pd/Ge/Au/Ti/Au to give ohmic contact on both n- and p-type Sb based layer surfaces. Dark I-V measurements show typical diode behavior for both the upper and lower photodiodes. The photoresponsivity measurements indicate that both the upper and lower photodiodes can sense the infrared illumination corresponding to their cutoff wavelengths respectively, comparable with the simulation results. More work is underway to bring the long wavelength band to the medium infrared wavelength region near 4 micrometers.

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus.

PubMed

Long, Mingsheng; Gao, Anyuan; Wang, Peng; Xia, Hui; Ott, Claudia; Pan, Chen; Fu, Yajun; Liu, Erfu; Chen, Xiaoshuang; Lu, Wei; Nilges, Tom; Xu, Jianbin; Wang, Xiaomu; Hu, Weida; Miao, Feng

2017-06-01

The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular "fingerprint" imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus-based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature-specific detectivity higher than 4.9 × 10 9 Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/ f noise in photonic devices.

Solution-processed nanoparticle super-float-gated organic field-effect transistor as un-cooled ultraviolet and infrared photon counter.

PubMed

Yuan, Yongbo; Dong, Qingfeng; Yang, Bin; Guo, Fawen; Zhang, Qi; Han, Ming; Huang, Jinsong

2013-01-01

High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6 photons/μm(2)s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.

Rectified photocurrent in a planar ITO/graphene/ITO photodetector on SiC by local irradiation of ultraviolet light

NASA Astrophysics Data System (ADS)

Yang, Junwei; Guo, Liwei; Huang, Jiao; Mao, Qi; Guo, Yunlong; Jia, Yuping; Peng, Tonghua; Chen, Xiaolong

2017-10-01

A rectified photocurrent behaviour is demonstrated in a simple planar structure of ITO-graphene-ITO formed on a SiC substrate when an ultraviolet (UV) light is locally incident on one of the edges between the graphene and ITO electrode. The photocurrent has similar characteristics as those of a vertical structure graphene/semiconductor junction photodiode, but is clearly different from those found in a planar structure metal-graphene-metal device. Furthermore, the device behaves multi-functionally as a photodiode with sensitive UV photodetection capability (responsivity of 11.7 mA W-1 at 0.3 V) and a self-powered UV photodetector (responsivity of 4.4 mA W-1 at zero bias). Both features are operative in a wide dynamic range and with a fast speed of response in about gigahertz. The linear I-V behaviour with laser power at forward bias and cutoff at reverse bias leads to a conceptual photodiode, which is compatible with modern semiconductor planar device architecture. This paves a potential way to realize ultrafast graphene planar photodiodes for monolithic integration of graphene-based devices on the same SiC substrate.

Highly sensitive and area-efficient CMOS image sensor using a PMOSFET-type photodetector with a built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Kim, Kyoung-Do; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2007-02-01

In this paper, a new CMOS image sensor is presented, which uses a PMOSFET-type photodetector with a transfer gate that has a high and variable sensitivity. The proposed CMOS image sensor has been fabricated using a 0.35 μm 2-poly 4- metal standard CMOS technology and is composed of a 256 × 256 array of 7.05 × 7.10 μm pixels. The unit pixel has a configuration of a pseudo 3-transistor active pixel sensor (APS) with the PMOSFET-type photodetector with a transfer gate, which has a function of conventional 4-transistor APS. The generated photocurrent is controlled by the transfer gate of the PMOSFET-type photodetector. The maximum responsivity of the photodetector is larger than 1.0 × 10 3 A/W without any optical lens. Fabricated 256 × 256 CMOS image sensor exhibits a good response to low-level illumination as low as 5 lux.

Selectively Enhanced UV-A Photoresponsivity of a GaN MSM UV Photodetector with a Step-Graded AlxGa1-xN Buffer Layer.

PubMed

Lee, Chang-Ju; Won, Chul-Ho; Lee, Jung-Hee; Hahm, Sung-Ho; Park, Hongsik

2017-07-21

The UV-to-visible rejection ratio is one of the important figure of merits of GaN-based UV photodetectors. For cost-effectiveness and large-scale fabrication of GaN devices, we tried to grow a GaN epitaxial layer on silicon substrate with complicated buffer layers for a stress-release. It is known that the structure of the buffer layers affects the performance of devices fabricated on the GaN epitaxial layers. In this study, we show that the design of a buffer layer structure can make effect on the UV-to-visible rejection ratio of GaN UV photodetectors. The GaN photodetector fabricated on GaN-on-silicon substrate with a step-graded Al x Ga -x N buffer layer has a highly-selective photoresponse at 365-nm wavelength. The UV-to-visible rejection ratio of the GaN UV photodetector with the step-graded Al x Ga 1-x N buffer layer was an order-of-magnitude higher than that of a photodetector with a conventional GaN/AlN multi buffer layer. The maximum photoresponsivity was as high as 5 × 10 - ² A/W. This result implies that the design of buffer layer is important for photoresponse characteristics of GaN UV photodetectors as well as the crystal quality of the GaN epitaxial layers.

Single Pixel Black Phosphorus Photodetector for Near-Infrared Imaging.

PubMed

Miao, Jinshui; Song, Bo; Xu, Zhihao; Cai, Le; Zhang, Suoming; Dong, Lixin; Wang, Chuan

2018-01-01

Infrared imaging systems have wide range of military or civil applications and 2D nanomaterials have recently emerged as potential sensing materials that may outperform conventional ones such as HgCdTe, InGaAs, and InSb. As an example, 2D black phosphorus (BP) thin film has a thickness-dependent direct bandgap with low shot noise and noncryogenic operation for visible to mid-infrared photodetection. In this paper, the use of a single-pixel photodetector made with few-layer BP thin film for near-infrared imaging applications is demonstrated. The imaging is achieved by combining the photodetector with a digital micromirror device to encode and subsequently reconstruct the image based on compressive sensing algorithm. Stationary images of a near-infrared laser spot (λ = 830 nm) with up to 64 × 64 pixels are captured using this single-pixel BP camera with 2000 times of measurements, which is only half of the total number of pixels. The imaging platform demonstrated in this work circumvents the grand challenges of scalable BP material growth for photodetector array fabrication and shows the efficacy of utilizing the outstanding performance of BP photodetector for future high-speed infrared camera applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible, transparent and ultra-broadband photodetector based on large-area WSe2 film for wearable devices

NASA Astrophysics Data System (ADS)

Zheng, Zhaoqiang; Zhang, Tanmei; Yao, Jiandomg; Zhang, Yi; Xu, Jiarui; Yang, Guowei

2016-06-01

Although two-dimensional (2D) materials have attracted considerable research interest for use in the development of innovative wearable optoelectronic systems, the integrated optoelectronic performance of 2D materials photodetectors, including flexibility, transparency, broadband response and stability in air, remains quite low to date. Here, we demonstrate a flexible, transparent, high-stability and ultra-broadband photodetector made using large-area and highly-crystalline WSe2 films that were prepared by pulsed-laser deposition (PLD). Benefiting from the 2D physics of WSe2 films, this device exhibits excellent average transparency of 72% in the visible range and superior photoresponse characteristics, including an ultra-broadband detection spectral range from 370 to 1064 nm, reversible photoresponsivity approaching 0.92 A W-1, external quantum efficiency of up to 180% and a relatively fast response time of 0.9 s. The fabricated photodetector also demonstrates outstanding mechanical flexibility and durability in air. Also, because of the wide compatibility of the PLD-grown WSe2 film, we can fabricate various photodetectors on multiple flexible or rigid substrates, and all these devices will exhibit distinctive switching behavior and superior responsivity. These indicate a possible new strategy for the design and integration of flexible, transparent and broadband photodetectors based on large-area WSe2 films, with great potential for practical applications in the wearable optoelectronic devices.

Design and fabrication of resonator-quantum well infrared photodetector for SF6 gas sensor application

NASA Astrophysics Data System (ADS)

Sun, Jason; Choi, Kwong-Kit; DeCuir, Eric; Olver, Kimberley; Fu, Richard

2017-07-01

The infrared absorption of SF6 gas is narrowband and peaks at 10.6 μm. This narrowband absorption posts a stringent requirement on the corresponding sensors as they need to collect enough signal from this limited spectral bandwidth to maintain a high sensitivity. Resonator-quantum well infrared photodetectors (R-QWIPs) are the next generation of QWIP detectors that use resonances to increase the quantum efficiency for more efficient signal collection. Since the resonant approach is applicable to narrowband as well as broadband, it is particularly suitable for this application. We designed and fabricated R-QWIPs for SF6 gas detection. To achieve the expected performance, the detector geometry must be produced according to precise specifications. In particular, the height of the diffractive elements and the thickness of the active resonator must be uniform, and accurately realized to within 0.05 μm. Additionally, the substrates of the detectors must be completely removed to prevent the escape of unabsorbed light in the detectors. To achieve these specifications, two optimized inductively coupled plasma etching processes were developed. Due to submicron detector feature sizes and overlay tolerance, we used an advanced semiconductor material lithography stepper instead of a contact mask aligner to pattern wafers. Using these etching techniques and tool, we have fabricated focal plane arrays with 30-μm pixel pitch and 320×256 format. The initial test revealed promising results.

UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors

PubMed Central

Zhou, Peng; Wang, Na; Ma, Yang

2018-01-01

The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs) limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D) wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO) for ultraviolet (UV) photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm−2, on/off current ratio of 3.01 × 104, and responsivity of 1.83 A·W−1 when a UV irradiation of 3.26 mW·cm−2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite. PMID:29303994

UV-Assisted Photochemical Synthesis of Reduced Graphene Oxide/ZnO Nanowires Composite for Photoresponse Enhancement in UV Photodetectors.

PubMed

Chen, Changsong; Zhou, Peng; Wang, Na; Ma, Yang; San, Haisheng

2018-01-05

The weak photon absorption and high recombination rate of electron-hole pairs in disordered zinc oxide nanowires (ZNWs) limit its application in UV photodetection. This limitation can be overcome by introducing graphene sheets to the ZNWs. Herein we report a high-performance photodetector based on one-dimensional (1D) wide band-gap semiconductor disordered ZNWs composited with reduced graphene oxide (RGO) for ultraviolet (UV) photoresponse enhancement. The RGO/ZNWs composites have been successfully synthetized through UV-assisted photochemical reduction of GO in ZNWs suspension. The material characterizations in morphology, Raman scattering, and Ultraviolet-visible light absorption verified the formation of graphene sheets attached in ZNWs network and the enhancement of UV absorption due to the introduction of graphene. In comparison with photodetectors based on pure ZNWs, the photodetectors based on RGO/ZNWs composite exhibit enhanced photoresponse with photocurrent density of 5.87 mA·cm -2 , on/off current ratio of 3.01 × 10⁴, and responsivity of 1.83 A·W -1 when a UV irradiation of 3.26 mW·cm -2 and 1.0 V bias were used. Theory analysis is also presented to get insight into the inherent mechanisms of separation and transportation of photo-excited carriers in RGO/ZNWs composite.

Analysis of fabric materials cut using ultraviolet laser ablation

NASA Astrophysics Data System (ADS)

Tsai, Hsin-Yi; Yang, Chih-Chung; Hsiao, Wen-Tse; Huang, Kuo-Cheng; Andrew Yeh, J.

2016-04-01

Laser ablation technology has widely been applied in the clothing industry in recent years. However, the laser mechanism would affect the quality of fabric contours and its components. Hence, this study examined carbonization and oxidation conditions and contour variation in nonwoven, cotton, and composite leather fabrics cut by using an ultraviolet laser at a wavelength of 355 nm. Processing parameters such as laser power, pulse frequency, scanning speed, and number of pulses per spot were adjusted to investigate component variation of the materials and to determine suitable cutting parameters for the fabrics. The experimental results showed that the weights of the component changed substantially by pulse frequency but slightly by laser power, so pulse frequency of 100 kHz and laser power of 14 W were the approximate parameters for three fabrics for the smaller carbonization and a sufficient energy for rapidly cutting, which the pulse duration of laser system was fixed at 300 μs and laser irradiance was 0.98 J/mm2 simultaneously. In addition, the etiolate phenomenon of nonwoven was reduced, and the component weight of cotton and composite leather was closed to the value of knife-cut fabric as the scanning speed increased. The approximate scanning speed for nonwoven and composite leather was 200 mm/s, and one for cotton was 150 mm/s, respectively. The sharper and firmer edge is obtained by laser ablation mechanism in comparison with traditional knife cutting. Experimental results can serve as the reference for laser cutting in the clothing industry, for rapidly providing smoother patterns with lower carbonization and oxidation edge in the fashion industry.

P3HT-graphene bilayer electrode for Schottky junction photodetectors

NASA Astrophysics Data System (ADS)

Aydın, H.; Kalkan, S. B.; Varlikli, C.; Çelebi, C.

2018-04-01

We have investigated the effect of a poly (3-hexylthiophene-2.5-diyl)(P3HT)-graphene bilayer electrode on the photoresponsivity characteristics of Si-based Schottky photodetectors. P3HT, which is known to be an electron donor and absorb light in the visible spectrum, was placed on CVD grown graphene by dip-coating method. The results of the UV-vis and Raman spectroscopy measurements have been evaluated to confirm the optical and electronic modification of graphene by the P3HT thin film. Current-voltage measurements of graphene/Si and P3HT-graphene/Si revealed rectification behavior confirming a Schottky junction formation at the graphene/Si interface. Time-resolved photocurrent spectroscopy measurements showed the devices had excellent durability and a fast response speed. We found that the maximum spectral photoresponsivity of the P3HT-graphene/Si photodetector increased more than three orders of magnitude compared to that of the bare graphene/Si photodetector. The observed increment in the photoresponsivity of the P3HT-graphene/Si samples was attributed to the charge transfer doping from P3HT to graphene within the spectral range between near-ultraviolet and near-infrared. Furthermore, the P3HT-graphene electrode was found to improve the specific detectivity and noise equivalent power of graphene/Si photodetectors. The obtained results showed that the P3HT-graphene bilayer electrodes significantly improved the photoresponsivity characteristics of our samples and thus can be used as a functional component in Si-based optoelectronic device applications.

Room temperature high-detectivity mid-infrared photodetectors based on black arsenic phosphorus

PubMed Central

Long, Mingsheng; Gao, Anyuan; Wang, Peng; Xia, Hui; Ott, Claudia; Pan, Chen; Fu, Yajun; Liu, Erfu; Chen, Xiaoshuang; Lu, Wei; Nilges, Tom; Xu, Jianbin; Wang, Xiaomu; Hu, Weida; Miao, Feng

2017-01-01

The mid-infrared (MIR) spectral range, pertaining to important applications, such as molecular “fingerprint” imaging, remote sensing, free space telecommunication, and optical radar, is of particular scientific interest and technological importance. However, state-of-the-art materials for MIR detection are limited by intrinsic noise and inconvenient fabrication processes, resulting in high-cost photodetectors requiring cryogenic operation. We report black arsenic phosphorus–based long-wavelength IR photodetectors, with room temperature operation up to 8.2 μm, entering the second MIR atmospheric transmission window. Combined with a van der Waals heterojunction, room temperature–specific detectivity higher than 4.9 × 109 Jones was obtained in the 3- to 5-μm range. The photodetector works in a zero-bias photovoltaic mode, enabling fast photoresponse and low dark noise. Our van der Waals heterojunction photodetectors not only exemplify black arsenic phosphorus as a promising candidate for MIR optoelectronic applications but also pave the way for a general strategy to suppress 1/f noise in photonic devices. PMID:28695200

Traveling-wave photodetector

DOEpatents

Hietala, V.M.; Vawter, G.A.

1993-12-14

The traveling-wave photodetector of the present invention combines an absorptive optical waveguide and an electrical transmission line, in which optical absorption in the waveguide results in a photocurrent at the electrodes of the electrical transmission line. The optical waveguide and electrical transmission line of the electrically distributed traveling-wave photodetector are designed to achieve matched velocities between the light in the optical waveguide and electrical signal generated on the transmission line. This velocity synchronization provides the traveling-wave photodetector with a large electrical bandwidth and a high quantum efficiency, because of the effective extended volume for optical absorption. The traveling-wave photodetector also provides large power dissipation, because of its large physical size. 4 figures.

Traveling-wave photodetector

DOEpatents

Hietala, Vincent M.; Vawter, Gregory A.

1993-01-01

The traveling-wave photodetector of the present invention combines an absorptive optical waveguide and an electrical transmission line, in which optical absorption in the waveguide results in a photocurrent at the electrodes of the electrical transmission line. The optical waveguide and electrical transmission line of the electrically distributed traveling-wave photodetector are designed to achieve matched velocities between the light in the optical waveguide and electrical signal generated on the transmission line. This velocity synchronization provides the traveling-wave photodetector with a large electrical bandwidth and a high quantum efficiency, because of the effective extended volume for optical absorption. The traveling-wave photodetector also provides large power dissipation, because of its large physical size.

Investigation of Optical Properties of Zinc Oxide Photodetector

NASA Astrophysics Data System (ADS)

Chism, Tyler

UV photodetection devices have many important applications for uses in biological detection, gas sensing, weaponry detection, fire detection, chemical analysis, and many others. Today's photodetectors often utilize semiconductors such as GaAs to achieve high responsivity and sensitivity. Zinc oxide, unlike many other semiconductors, is cheap, abundant, non-toxic, and easy to grow different morphologies at the micro and nano scale. With the proliferation of these devices also comes the impending need to further study optics and photonics in relation to phononics and plasmonics, and the general principles underlying the interaction of photons with solid state matter and, specifically, semiconductors. For this research a metal-semiconductor-metal UV photodetector has been fabricated by using a quartz substrate on top of which was deposited micropatterned gold in an interdigitated electrode design. On this, sparsely coated zinc oxide nano trees were hydrothermally grown. The UV photodetection device showed promise for detection applications, especially because zinc oxide is also very thermally stable, a quality which is highly sought after in today's UV photodetectors. Furthermore, the newly synthesized photodetector was used to investigate optical properties and how they respond to different stimuli. It was discovered that the photons transmitted through the sparsely coated zinc oxide nano trees decreased as the voltage across the device increased. This research is aimed at better understanding photons interaction with matter and also to open the door for new devices with tunable optical properties such as transmission.

Design of a Voltage Tunable Broadband Quantum Well Infrared Photodetector

DTIC Science & Technology

2002-06-01

1 B. PROGRESS OF QWIPS ...converting some of the incident photons to an electric signal. A Quantum Well Infrared Photodetector ( QWIP ) consists of a stack of quantum wells...arsenide (GaAs ) and aluminum gallium arsenide ( AsGaAl xx −1 ) with different aluminum compositions allowed the fabrication of novel QWIP detectors

Visible to short wavelength infrared In2Se3-nanoflake photodetector gated by a ferroelectric polymer

NASA Astrophysics Data System (ADS)

Wu, Guangjian; Wang, Xudong; Wang, Peng; Huang, Hai; Chen, Yan; Sun, Shuo; Shen, Hong; Lin, Tie; Wang, Jianlu; Zhang, Shangtao; Bian, Lifeng; Sun, Jinglan; Meng, Xiangjian; Chu, Junhao

2016-09-01

Photodetectors based on two-dimensional (2D) transition-metal dichalcogenides have been studied extensively in recent years. However, the detective spectral ranges, dark current and response time are still unsatisfactory, even under high gate and source-drain bias. In this work, the photodetectors of In2Se3 have been fabricated on a ferroelectric field effect transistor structure. Based on this structure, high performance photodetectors have been achieved with a broad photoresponse spectrum (visible to 1550 nm) and quick response (200 μs). Most importantly, with the intrinsic huge electric field derived from the polarization of ferroelectric polymer (P(VDF-TrFE)) gating, a low dark current of the photodetector can be achieved without additional gate bias. These studies present a crucial step for further practical applications for 2D semiconductors.

Interfacial Electronic Structures of Photodetectors Based on C8BTBT/Perovskite.

PubMed

Li, Lin; Tong, Sichao; Zhao, Yuan; Wang, Can; Wang, Shitan; Lyu, Lu; Huang, Yingbao; Huang, Han; Yang, Junliang; Niu, Dongmei; Liu, Xiaoliang; Gao, Yongli

2018-06-07

Comprehensive measurements of ultraviolet photoemission spectroscopy, X-ray photoemission spectroscopy, X-ray diffraction, and atomic force microscopy are adopted to investigate the corelevance of energy level alignment, molecular orientation, and film growth of Au/C8BTBT/perovskite interfaces. A small energy offset of valence band maximum of 0.06 eV between perovskite and C8BTBT makes hole transportation feasible. About 0.65 eV upward shift of energy levels is observed with the deposition of the Au film on C8BTBT, which enhances hole transportation to the Au electrode. The observations from the interface analysis are supported by a prototype photodetector of Au (80 nm)/C8BTBT (20 nm)/perovskite (100 nm) that exhibits excellent performances whose responsivity can reach up to 2.65 A W -1 , 4 times higher than the best CH 3 NH 3 PbI 3 photodetectors.

NIR spectrometer using a Schottky photodetector enhanced by grating-based SPR.

PubMed

Chen, Wenjing; Kan, Tetsuo; Ajiki, Yoshiharu; Matsumoto, Kiyoshi; Shimoyama, Isao

2016-10-31

We present a near-infrared (NIR) spectrum measurement method using a Schottky photodetector enhanced by surface plasmon resonance (SPR). An Au grating was fabricated on an n-type silicon wafer to form a Schottky barrier and act as an SPR coupler. The resulting photodetector provides wavelength-selective photodetection depending on the SPR coupling angle. A matrix was pre-calculated to describe this characteristic. The spectrum was obtained from this matrix and the measured photocurrents at various SPR coupling angles. Light with single and multiple wavelengths was tested. Comparative measurements showed that our method is able to detect spectra with a wavelength resolution comparable to that of a commercial spectrometer.

Photodetectors using III-V nitrides

DOEpatents

Moustakas, Theodore D.

1998-01-01

A bandpass photodetector using a III-V nitride and having predetermined electrical properties. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal.

High-Speed Scalable Silicon-MoS2 P-N Heterojunction Photodetectors

PubMed Central

Dhyani, Veerendra; Das, Samaresh

2017-01-01

Two-dimensional molybdenum disulfide (MoS2) is a promising material for ultrasensitive photodetector owing to its favourable band gap and high absorption coefficient. However, their commercial applications are limited by the lack of high quality p-n junction and large wafer scale fabrication process. A high speed Si/MoS2 p-n heterojunction photodetector with simple and CMOS compatible approach has been reported here. The large area MoS2 thin film on silicon platform has been synthesized by sulfurization of RF-sputtered MoO3 films. The fabricated molecular layers of MoS2 on silicon offers high responsivity up to 8.75 A/W (at 580 nm and 3 V bias) with ultra-fast response of 10 μsec (rise time). Transient measurements of Si/MoS2 heterojunction under the modulated light reveal that the devices can function up to 50 kHz. The Si/MoS2 heterojunction is found to be sensitive to broadband wavelengths ranging from visible to near-infrared light with maximum detectivity up to ≈1.4 × 1012 Jones (2 V bias). Reproducible low dark current and high responsivity from over 20 devices in the same wafer has been measured. Additionally, the MoS2/Si photodetectors exhibit excellent stability in ambient atmosphere. PMID:28281652

Functionalised hexagonal-domain graphene for position-sensitive photodetectors

NASA Astrophysics Data System (ADS)

De Sanctis, Adolfo; Barnes, Matthew D.; Amit, Iddo; Craciun, Monica F.; Russo, Saverio

2017-03-01

Graphene’s unique photoresponse has been largely used in a multitude of optoelectronics applications ranging from broadband photodetectors to wave-guide modulators. In this work we extend the range of applications to position-sensitive photodetectors (PSDs) using FeCl3-intercalated hexagonal domains of graphene grown by atmospheric pressure chemical vapour deposition (APCVD). The FeCl3-based chemical functionalisation of APCVD graphene crystals is affected by the presence of wrinkles and results in a non-uniform doping of the graphene layers. This doping profile creates multiple p-p+ photoactive junctions which show a linear and bipolar photoresponse with respect to the position of a focused light spot, which is ideal for the realization of a PSD. Our study paves the way towards the fabrication of flexible and transparent PSDs that could be embedded in smart textile and wearable electronics.

Towards substrate engineering of graphene-silicon Schottky diode photodetectors.

PubMed

Selvi, Hakan; Unsuree, Nawapong; Whittaker, Eric; Halsall, Matthew P; Hill, Ernie W; Thomas, Andrew; Parkinson, Patrick; Echtermeyer, Tim J

2018-02-15

Graphene-silicon Schottky diode photodetectors possess beneficial properties such as high responsivities and detectivities, broad spectral wavelength operation and high operating speeds. Various routes and architectures have been employed in the past to fabricate devices. Devices are commonly based on the removal of the silicon-oxide layer on the surface of silicon by wet-etching before deposition of graphene on top of silicon to form the graphene-silicon Schottky junction. In this work, we systematically investigate the influence of the interfacial oxide layer, the fabrication technique employed and the silicon substrate on the light detection capabilities of graphene-silicon Schottky diode photodetectors. The properties of devices are investigated over a broad wavelength range from near-UV to short-/mid-infrared radiation, radiation intensities covering over five orders of magnitude as well as the suitability of devices for high speed operation. Results show that the interfacial layer, depending on the required application, is in fact beneficial to enhance the photodetection properties of such devices. Further, we demonstrate the influence of the silicon substrate on the spectral response and operating speed. Fabricated devices operate over a broad spectral wavelength range from the near-UV to the short-/mid-infrared (thermal) wavelength regime, exhibit high photovoltage responses approaching 10 6 V W -1 and short rise- and fall-times of tens of nanoseconds.

Photodetectors using III-V nitrides

DOEpatents

Moustakas, T.D.

1998-12-08

A bandpass photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The bandpass photodetector detects electromagnetic radiation between a lower transition wavelength and an upper transition wavelength. That detector comprises two low pass photodetectors. The response of the two low pass photodetectors is subtracted to yield a response signal. 24 figs.

Passivation of surface states in the ZnO nanowire with thermally evaporated copper phthalocyanine for hybrid photodetectors.

PubMed

Chen, Qi; Ding, Huaiyi; Wu, Yukun; Sui, Mengqiao; Lu, Wei; Wang, Bing; Su, Wenming; Cui, Zheng; Chen, Liwei

2013-05-21

The adsorption of O2/H2O molecules on the ZnO nanowire (NW) surface results in the long lifetime of photo-generated carriers and thus benefits ZnO NW-based ultraviolet photodetectors by suppressing the dark current and improving the photocurrent gain, but the slow adsorption process also leads to slow detector response time. Here we show that a thermally evaporated copper phthalocyanine film is effective in passivating surface trap states of ZnO NWs. As a result, the organic/inorganic hybrid photodetector devices exhibit simultaneously improved photosensitivity and response time. This work suggests that it could be an effective way in interfacial passivation using organic/inorganic hybrid structures.

Development of Ultraviolet (UV) Radiation Protective Fabric Using Combined Electrospinning and Electrospraying Technique

NASA Astrophysics Data System (ADS)

Sinha, Mukesh Kumar; Das, B. R.; Kumar, Kamal; Kishore, Brij; Prasad, N. Eswara

2017-06-01

The article reports a novel technique for functionization of nanoweb to develop ultraviolet (UV) radiation protective fabric. UV radiation protection effect is produced by combination of electrospinning and electrospraying technique. A nanofibrous web of polyvinylidene difluoride (PVDF) coated on polypropylene nonwoven fabric is produced by latest nanospider technology. Subsequently, web is functionalized by titanium dioxide (TiO2). The developed web is characterized for evaluation of surface morphology and other functional properties; mechanical, chemical, crystalline and thermal. An optimal (judicious) nanofibre spinning condition is achieved and established. The produced web is uniformly coated by defect free functional nanofibres in a continuous form of useable textile structural membrane for ultraviolet (UV) protective clothing. This research initiative succeeds in preparation and optimization of various nanowebs for UV protection. Field Emission Scanning Electron Microscope (FESEM) result reveals that PVDF webs photo-degradative behavior is non-accelerated, as compared to normal polymeric grade fibres. Functionalization with TiO2 has enhanced the photo-stability of webs. The ultraviolet protection factor of functionalized and non-functionalized nanowebs empirically evaluated to be 65 and 24 respectively. The developed coated layer could be exploited for developing various defence, para-military and civilian UV protective light weight clothing (tent, covers and shelter segments, combat suit, snow bound camouflaging nets). This research therefore, is conducted in an attempt to develop a scientific understanding of PVDF fibre coated webs for photo-degradation and applications for defence protective textiles. This technological research in laboratory scale could be translated into bulk productionization.

Highly sensitive MOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane.

PubMed

Chen, Yungting; Cheng, Tzuhuan; Cheng, Chungliang; Wang, Chunhsiung; Chen, Chihwei; Wei, Chihming; Chen, Yangfang

2010-01-04

A new approach for developing highly sensitive MOS photodetector based on the assistance of anodic aluminum oxide (AAO) membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the MOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Unlike general MOS photodetectors which only work under a reverse bias, our MOS photodetectors can work even under a forward bias, and the responsivity at the optical communication wavelength of 850nm can reach up to 0.24 A/W with an external quantum efficiency (EQE) of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

2018-04-01

We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

Semiconductor superlattice photodetectors

NASA Technical Reports Server (NTRS)

Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

1985-01-01

Two novel types of superlattice photodetectors were studied. The first was a superlattice photomultiplier and the second a photodetector based on the real space transfer mechanism. A summary of the results is presented.

Photodetectors for scintillator proportionality measurement

NASA Astrophysics Data System (ADS)

Moses, William W.; Choong, Woon-Seng; Hull, Giulia; Payne, Steve; Cherepy, Nerine; Valentine, John D.

2009-10-01

We evaluate photodetectors for use in a Compton Coincidence apparatus designed for measuring scintillator proportionality. There are many requirements placed on the photodetector in these systems, including active area, linearity, and the ability to accurately measure low light levels (which implies high quantum efficiency and high signal-to-noise ratio). Through a combination of measurement and Monte Carlo simulation, we evaluate a number of potential photodetectors, especially photomultiplier tubes and hybrid photodetectors. Of these, we find that the most promising devices available are photomultiplier tubes with high (˜50%) quantum efficiency, although hybrid photodetectors with high quantum efficiency would be preferable.

Polymer:Fullerene Bimolecular Crystals for Near-Infrared Spectroscopic Photodetectors.

PubMed

Tang, Zheng; Ma, Zaifei; Sánchez-Díaz, Antonio; Ullbrich, Sascha; Liu, Yuan; Siegmund, Bernhard; Mischok, Andreas; Leo, Karl; Campoy-Quiles, Mariano; Li, Weiwei; Vandewal, Koen

2017-09-01

Spectroscopic photodetection is a powerful tool in disciplines such as medical diagnosis, industrial process monitoring, or agriculture. However, its application in novel fields, including wearable and biointegrated electronics, is hampered by the use of bulky dispersive optics. Here, solution-processed organic donor-acceptor blends are employed in a resonant optical cavity device architecture for wavelength-tunable photodetection. While conventional photodetectors respond to above-gap excitation, the cavity device exploits weak subgap absorption of intermolecular charge-transfer states of the intercalating poly[2,5-bis(3-tetradecylthiophen-2-yl)thieno[3,2-b]thiophene] (PBTTT):[6,6]-phenyl-C61-butyric acid methyl ester (PCBM) bimolecular crystal. This enables a highly wavelength selective, near-infrared photoresponse with a spectral resolution down to 14 nm, as well as dark currents and detectivities comparable with commercial inorganic photodetectors. Based on this concept, a miniaturized spectrophotometer, comprising an array of narrowband cavity photodetectors, is fabricated by using a blade-coated PBTTT:PCBM thin film with a thickness gradient. As an application example, a measurement of the transmittance spectrum of water by this device is demonstrated. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Equalizing Si photodetectors fabricated in standard CMOS processes

NASA Astrophysics Data System (ADS)

Guerrero, E.; Aguirre, J.; Sánchez-Azqueta, C.; Royo, G.; Gimeno, C.; Celma, S.

2017-05-01

This work presents a new continuous-time equalization approach to overcome the limited bandwidth of integrated CMOS photodetectors. It is based on a split-path topology that features completely decoupled controls for boosting and gain; this capability allows a better tuning of the equalizer in comparison with other architectures based on the degenerated differential pair, which is particularly helpful to achieve a proper calibration of the system. The equalizer is intended to enhance the bandwidth of CMOS standard n-well/p-bulk differential photodiodes (DPDs), which falls below 10MHz representing a bottleneck in fully integrated optoelectronic interfaces to fulfill the low-cost requirements of modern smart sensors. The proposed equalizer has been simulated in a 65nm CMOS process and biased with a single supply voltage of 1V, where the bandwidth of the DPD has been increased up to 3 GHz.

Design, fabrication, and measurement of two silicon-based ultraviolet and blue-extended photodiodes

NASA Astrophysics Data System (ADS)

Chen, Changping; Wang, Han; Jiang, Zhenyu; Jin, Xiangliang; Luo, Jun

2014-12-01

Two silicon-based ultraviolet (UV) and blue-extended photodiodes are presented, which were fabricated for light detection in the ultraviolet/blue spectral range. Stripe-shaped and octagon-ring-shaped structures were designed to verify parameters of the UV-responsivity, UV-selectivity, breakdown voltage, and response time. The ultra-shallow lateral pn junction had been successfully realized in a standard 0.5-μm complementary metal oxide semiconductor (CMOS) process to enlarge the pn junction area, enhance the absorption of UV light, and improve the responsivity and quantum efficiency. The test results illustrated that the stripe-shaped structure has the lower breakdown voltage, higher UV-responsicity, and higher UV-selectivity. But the octagon-ring-shaped structure has the lower dark current. The response time of both structures was almost the same.

Improvement for the performance of solar-blind photodetector based on β-Ga2O3 thin films by doping Zn

NASA Astrophysics Data System (ADS)

Zhao, Xiaolong; Wu, Zhenping; Zhi, Yusong; An, Yuehua; Cui, Wei; Li, Linghong; Tang, Weihua

2017-03-01

Highly oriented (\\bar{2} 0 1 ) Ga2-x Zn x O3 thin films with different doping concentrations were grown on (0 0 0 1) sapphire substrates by laser molecular beam epitaxy technology. The expansion of lattice and the shrinkage of band gap with increasing doping level confirms the chemical substitution of Zn2+ ions into the Ga2O3 crystal lattice. The emission intensity of blue-violet emission bands enhanced with the increase of (ZnGa)‧ under 254 nm ultraviolet excitation, and the maximum was obtained at x  =  0.8. A metal-semiconductor-metal structured solar-blind photodetector based on Ga2-x Zn x O3 (x  =  0, 0.8) was made, the increasing responsivity and diminishing relaxation time constants for β-Ga2-x Zn x O3 (x  =  0.8) photodetector were observed with 254 nm ultraviolet illumination.

Self-Powered Solar-Blind Photodetector with Fast Response Based on Au/β-Ga2O3 Nanowires Array Film Schottky Junction.

PubMed

Chen, Xing; Liu, Kewei; Zhang, Zhenzhong; Wang, Chunrui; Li, Binghui; Zhao, Haifeng; Zhao, Dongxu; Shen, Dezhen

2016-02-17

Because of the direct band gap of 4.9 eV, β-Ga2O3 has been considered as an ideal material for solar-blind photodetection without any bandgap tuning. Practical applications of the photodetectors require fast response speed, high signal-to-noise ratio, low energy consumption and low fabrication cost. Unfortunately, most reported β-Ga2O3-based photodetectors usually possess a relatively long response time. In addition, the β-Ga2O3 photodetectors based on bulk, the individual 1D nanostructure, and the film often suffer from the high cost, the low repeatability, and the relatively large dark current, respectively. In this paper, a Au/β-Ga2O3 nanowires array film vertical Schottky photodiode is successfully fabricated by a simple thermal partial oxidation process. The device exhibits a very low dark current of 10 pA at -30 V with a sharp cutoff at 270 nm. More interestingly, the 90-10% decay time of our device is only around 64 μs, which is much quicker than any other previously reported β-Ga2O3-based photodetectors. Besides, the self-powering, the excellent stability and the good reproducibility of Au/β-Ga2O3 nanowires array film photodetector are helpful to its commercialization and practical applications.

Ambipolar Graphene-Quantum Dot Hybrid Vertical Photodetector with a Graphene Electrode.

PubMed

Che, Yongli; Zhang, Yating; Cao, Xiaolong; Zhang, Haiting; Song, Xiaoxian; Cao, Mingxuan; Yu, Yu; Dai, Haitao; Yang, Junbo; Zhang, Guizhong; Yao, Jianquan

2017-09-20

A strategy to fabricate an ambipolar near-infrared vertical photodetector (VPD) by sandwiching a photoactive material as a channel film between the bottom graphene and top metal electrodes was developed. The channel length in the vertical architecture was determined by the channel layer thickness, which can provide an ultrashort channel length without the need for a high-precision manufacturing process. The performance of VPDs with two types of semiconductor layers, a graphene-PbS quantum dot hybrid (GQDH) and PbS quantum dots (QDs), was measured. The GQDH VPD showed better photoelectric properties than the QD VPD because of the high mobility of graphene doped in the channel. The GQDH VPD exhibited excellent photoresponse properties with a responsivity of 1.6 × 10 4 A/W in the p-type regime and a fast response speed with a rise time of 8 ms. The simple manufacture and the promising photoresponse of the GQDH VPDs reveal that an easy and effective way to fabricate high-performance ambipolar photodetectors was developed.

Self-Powered, High-Speed and Visible-Near Infrared Response of MoO(3-x)/n-Si Heterojunction Photodetector with Enhanced Performance by Interfacial Engineering.

PubMed

Zhao, Chuanxi; Liang, Zhimin; Su, Mingze; Liu, Pengyi; Mai, Wenjie; Xie, Weiguang

2015-11-25

Photodetectors with a wide spectrum response are important components for sensing, imaging, and other optoelectronic applications. A molybdenum oxide (MoO(3-x))/Si heterojunction has been applied as solar cells with great success, but its potential in photodetectors has not been explored yet. Herein, a self-powered, high-speed heterojunction photodetector fabricated by coating an n-type Si hierarchical structure with an ultrathin hole-selective layer of molybdenum oxide (MoO(3-x)) is first investigated. Excellent and stable photoresponse performance is obtained by using a methyl group passivated interface. The heterojunction photodetector demonstrated high sensitivity to a wide spectrum from 300 to 1100 nm. The self-powered photodetector shows a high detectivity of (∼6.29 × 10(12) cmHz(1/2) W(-1)) and fast response time (1.0 μs). The excellent photodetecting performance is attributed to the enhanced interfacial barrier height and three-dimensional geometry of Si nanostructures, which is beneficial for efficient photocarrier collection and transportation. Finally, our devices show excellent long-term stability in air for 6 months with negligible performance degradation. The thermal evaporation method for large-scale fabrication of MoO(3-x)/n-Si photodetectors makes it suitable for self-powered, multispectral, and high-speed response photodetecting applications.

Design, fabrication and performance of two grazing incidence telescopes for celestial extreme ultraviolet astronomy

NASA Technical Reports Server (NTRS)

Lampton, M.; Cash, W.; Malina, R. F.; Bowyer, S.

1977-01-01

The design and performance of grazing incidence telescopes for celestial extreme ultraviolet (EUV) astronomy are described. The telescopes basically consist of a star tracker, collimator, grazing incidence mirror, vacuum box lid, vacuum housing, filters, a ranicon detector, an electronics box, and an aspect camera. For the survey mirror a Wolter-Schwarzschild type II configuration was selected. Diamond-turning was used for mirror fabrication, a technique which machines surfaces to the order of 10 microns over the required dimensions. The design of the EUV spectrometer is discussed with particular reference to the optics for a primarily spectroscopic application and the fabrication of the f/10 optics.

A fully-integrated 12.5-Gb/s 850-nm CMOS optical receiver based on a spatially-modulated avalanche photodetector.

PubMed

Lee, Myung-Jae; Youn, Jin-Sung; Park, Kang-Yeob; Choi, Woo-Young

2014-02-10

We present a fully integrated 12.5-Gb/s optical receiver fabricated with standard 0.13-µm complementary metal-oxide-semiconductor (CMOS) technology for 850-nm optical interconnect applications. Our integrated optical receiver includes a newly proposed CMOS-compatible spatially-modulated avalanche photodetector, which provides larger photodetection bandwidth than previously reported CMOS-compatible photodetectors. The receiver also has high-speed CMOS circuits including transimpedance amplifier, DC-balanced buffer, equalizer, and limiting amplifier. With the fabricated optical receiver, detection of 12.5-Gb/s optical data is successfully achieved at 5.8 pJ/bit. Our receiver achieves the highest data rate ever reported for 850-nm integrated CMOS optical receivers.

Hybrid Organic-Inorganic Perovskite Photodetectors.

PubMed

Tian, Wei; Zhou, Huanping; Li, Liang

2017-11-01

Hybrid organic-inorganic perovskite materials garner enormous attention for a wide range of optoelectronic devices. Due to their attractive optical and electrical properties including high optical absorption coefficient, high carrier mobility, and long carrier diffusion length, perovskites have opened up a great opportunity for high performance photodetectors. This review aims to give a comprehensive summary of the significant results on perovskite-based photodetectors, focusing on the relationship among the perovskite structures, device configurations, and photodetecting performances. An introduction of recent progress in various perovskite structure-based photodetectors is provided. The emphasis is placed on the correlation between the perovskite structure and the device performance. Next, recent developments of bandgap-tunable perovskite and hybrid photodetectors built from perovskite heterostructures are highlighted. Then, effective approaches to enhance the stability of perovskite photodetector are presented, followed by the introduction of flexible and self-powered perovskite photodetectors. Finally, a summary of the previous results is given, and the major challenges that need to be addressed in the future are outlined. A comprehensive summary of the research status on perovskite photodetectors is hoped to push forward the development of this field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Light trapping and surface plasmon enhanced high-performance NIR photodetector

PubMed Central

Luo, Lin-Bao; Zeng, Long-Hui; Xie, Chao; Yu, Yong-Qiang; Liang, Feng-Xia; Wu, Chun-Yan; Wang, Li; Hu, Ji-Gang

2014-01-01

Heterojunctions near infrared (NIR) photodetectors have attracted increasing research interests for their wide-ranging applications in many areas such as military surveillance, target detection, and light vision. A high-performance NIR light photodetector was fabricated by coating the methyl-group terminated Si nanowire array with plasmonic gold nanoparticles (AuNPs) decorated graphene film. Theoretical simulation based on finite element method (FEM) reveals that the AuNPs@graphene/CH3-SiNWs array device is capable of trapping the incident NIR light into the SiNWs array through SPP excitation and coupling in the AuNPs decorated graphene layer. What is more, the coupling and trapping of freely propagating plane waves from free space into the nanostructures, and surface passivation contribute to the high on-off ratio as well. PMID:24468857

Inhibition of Zero Drift in Perovskite-Based Photodetector Devices via [6,6]-Phenyl-C61-butyric Acid Methyl Ester Doping.

PubMed

Liu, Yintao; Jia, Renxu; Wang, Yucheng; Hu, Ziyang; Zhang, Yuming; Pang, Tiqiang; Zhu, Yuejin; Luan, Suzhen

2017-05-10

Zero drift can severely deteriorate the stability of the light-dark current ratio, detectivity, and responsivity of photodetectors. In this paper, the effects of a [6,6]-phenyl-C61-butyric acid methyl ester (PCBM)-doped perovskite-based photodetector device on the inhibition of zero drift under dark state are discussed. Two kinds of photodetectors (Au/CH 3 NH 3 PbI x Cl 3-x /Au and Au/CH 3 NH 3 PbI x Cl 3-x :PCBM/Au) were prepared, and the materials and photodetector devices were measured by scanning electron microscopy, X-ray diffraction, photoluminescence, ultraviolet absorption spectra, and current-voltage and current-time measurements. It was found that similar merit parameters, including light-dark current ratio (∼10 2 ), detectivity (∼10 11 Jones), and responsivity were obtained for these two kinds of photodetectors. However, the drift of Au/CH 3 NH 3 PbI x Cl 3-x :PCBM/Au devices is negligible, while a drift of ∼0.2 V exists in Au/CH 3 NH 3 PbI x Cl 3-x /Au devices. A new model is proposed based on the hindering theory of ion (vacancy) migration, and it is believed that the dopant PCBM can hinder the ion (vacancy) migration of perovskite materials to suppress the phenomenon of zero drift in perovskite-based photodetectors.

Perovskite photodetectors with both visible-infrared dual-mode response and super-narrowband characteristics towards photo-communication encryption application.

PubMed

Wu, Ye; Li, Xiaoming; Wei, Yi; Gu, Yu; Zeng, Haibo

2017-12-21

Photo-communication has attracted great attention because of the rapid development of wireless information transmission technology. However, it is still a great challenge in cryptography communications, where it is greatly weakened by the openness of the light channels. Here, visible-infrared dual-mode narrowband perovskite photodetectors were fabricated and a new photo-communication encryption technique was proposed. For the first time, highly narrowband and two-photon absorption (TPA) resultant photoresponses within a single photodetector are demonstrated. The full width at half maximum (FWHM) of the photoresponse is as narrow as 13.6 nm in the visible range, which is superior to state-of-the-art narrowband photodetectors. Furthermore, these two merits of narrowband and TPA characteristics are utilized to encrypt the photo-communication based on the above photodetectors. When sending information and noise signals with 532 and 442 nm laser light simultaneously, the perovskite photodetectors only receive the main information, while the commercial Si photodetector responds to both lights, losing the main information completely. The final data are determined by the secret key through the TPA process as preset. Such narrowband and TPA detection abilities endow the perovskite photodetectors with great potential in future security communication and also provide new opportunities and platforms for encryption techniques.

Upconversion single-microbelt photodetector via two-photon absorption simultaneous

NASA Astrophysics Data System (ADS)

Lou, Guanlin; Wu, Yanyan; Zhu, Hai; Li, Jinyu; Chen, Anqi; Chen, Zhiyang; Liang, Yunfeng; Ren, Yuhao; Gui, Xuchun; Zhong, Dingyong; Qiu, Zhiren; Tang, Zikang; Su, Shi C.

2018-05-01

Single microbelt (MB) photodetectors with metal–semiconductor-metal structure have been demonstrated and characterized comprehensively. For single-photon absorption, the maximum responsivity of ZnO-MB photodetector can reach as high as 1.4  ×  105 A W‑1 at 20 V bias. The results about photoresponse of MB-detector reveals that two relaxation mechanisms contribute to the carrier decay time. Moreover, the two-photon absorption upconversion photoresponsivity in the single-MB detector has also been realized, which is the first report about the two-photon absorption detector to the best of our knowledge. The excellent two-photon absorption photoresponsivity characteristic of the MB device can be available not only for detector but also for solar cell and biomedical imaging. The above results present a significant step towards future fabrication of single micro/nano-structure based multiphoton excitation optoelectronic devices.

Silicon nanowire photodetectors made by metal-assisted chemical etching

NASA Astrophysics Data System (ADS)

Xu, Ying; Ni, Chuan; Sarangan, Andrew

2016-09-01

Silicon nanowires have unique optical effects, and have potential applications in photodetectors. They can exhibit simple optical effects such as anti-reflection, but can also produce quantum confined effects. In this work, we have fabricated silicon photodetectors, and then post-processed them by etching nanowires on the incident surface. These nanowires were produced by a wet-chemical etching process known as the metal-assisted-chemical etching, abbreviated as MACE. N-type silicon substrates were doped by thermal diffusion from a solid ceramic source, followed by etching, patterning and contact metallization. The detectors were first tested for functionality and optical performance. The nanowires were then made by depositing an ultra-thin film of gold below its percolation thickness to produce an interconnected porous film. This was then used as a template to etch high aspect ratio nanowires into the face of the detectors with a HF:H2O2 mixture.

Solar-Blind Photodetectors for Harsh Electronics

PubMed Central

Tsai, Dung-Sheng; Lien, Wei-Cheng; Lien, Der-Hsien; Chen, Kuan-Ming; Tsai, Meng-Lin; Senesky, Debbie G.; Yu, Yueh-Chung; Pisano, Albert P.; He, Jr-Hau

2013-01-01

We demonstrate solar-blind photodetectors (PDs) by employing AlN thin films on Si(100) substrates with excellent temperature tolerance and radiation hardness. Even at a bias higher than 200 V the AlN PDs on Si show a dark current as low as ~ 1 nA. The working temperature is up to 300°C and the radiation tolerance is up to 1013 cm−2 of 2-MeV proton fluences for AlN metal-semiconductor-metal (MSM) PDs. Moreover, the AlN PDs show a photoresponse time as fast as ~ 110 ms (the rise time) and ~ 80 ms (the fall time) at 5 V bias. The results demonstrate that AlN MSM PDs hold high potential in next-generation deep ultraviolet PDs for use in harsh environments. PMID:24022208

A Review on Organic-Inorganic Halide Perovskite Photodetectors: Device Engineering and Fundamental Physics.

PubMed

Ahmadi, Mahshid; Wu, Ting; Hu, Bin

2017-11-01

The last eight years (2009-2017) have seen an explosive growth of interest in organic-inorganic halide perovskites in the research communities of photovoltaics and light-emitting diodes. In addition, recent advancements have demonstrated that this type of perovskite has a great potential in the technology of light-signal detection with a comparable performance to commercially available crystalline Si and III-V photodetectors. The contemporary growth of state-of-the-art multifunctional perovskites in the field of light-signal detection has benefited from its outstanding intrinsic optoelectronic properties, including photoinduced polarization, high drift mobilities, and effective charge collection, which are excellent for this application. Photoactive perovskite semiconductors combine effective light absorption, allowing detection of a wide range of electromagnetic waves from ultraviolet and visible, to the near-infrared region, with low-cost solution processability and good photon yield. This class of semiconductor might empower breakthrough photodetector technology in the field of imaging, optical communications, and biomedical sensing. Therefore, here, the focus is specifically on the critical understanding of materials synthesis, design, and engineering for the next-stage development of perovskite photodetectors and highlighting the current challenges in the field, which need to be further studied in the future. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Three-dimensional nano-heterojunction networks: a highly performing structure for fast visible-blind UV photodetectors.

PubMed

Nasiri, Noushin; Bo, Renheng; Fu, Lan; Tricoli, Antonio

2017-02-02

Visible-blind ultraviolet photodetectors are a promising emerging technology for the development of wide bandgap optoelectronic devices with greatly reduced power consumption and size requirements. A standing challenge is to improve the slow response time of these nanostructured devices. Here, we present a three-dimensional nanoscale heterojunction architecture for fast-responsive visible-blind UV photodetectors. The device layout consists of p-type NiO clusters densely packed on the surface of an ultraporous network of electron-depleted n-type ZnO nanoparticles. This 3D structure can detect very low UV light densities while operating with a near-zero power consumption of ca. 4 × 10 -11 watts and a low bias of 0.2 mV. Most notably, heterojunction formation decreases the device rise and decay times by 26 and 20 times, respectively. These drastic enhancements in photoresponse dynamics are attributed to the stronger surface band bending and improved electron-hole separation of the nanoscale NiO/ZnO interface. These findings demonstrate a superior structural design and a simple, low-cost CMOS-compatible process for the engineering of high-performance wearable photodetectors.

Lateral conduction infrared photodetector

DOEpatents

Kim, Jin K [Albuquerque, NM; Carroll, Malcolm S [Albuquerque, NM

2011-09-20

A photodetector for detecting infrared light in a wavelength range of 3-25 .mu.m is disclosed. The photodetector has a mesa structure formed from semiconductor layers which include a type-II superlattice formed of alternating layers of InAs and In.sub.xGa.sub.1-xSb with 0.ltoreq.x.ltoreq.0.5. Impurity doped regions are formed on sidewalls of the mesa structure to provide for a lateral conduction of photo-generated carriers which can provide an increased carrier mobility and a reduced surface recombination. An optional bias electrode can be used in the photodetector to control and vary a cut-off wavelength or a depletion width therein. The photodetector can be formed as a single-color or multi-color device, and can also be used to form a focal plane array which is compatible with conventional read-out integrated circuits.

A Molecular- and Nano-Electronics Test (MONET) platform fabricated using extreme ultraviolet lithography.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dentinger, Paul M.; Cardinale, Gregory F.; Hunter, Luke L.

2003-12-01

We describe the fabrication and characterization of an electrode array test structure, designed for electrical probing of molecules and nanocrystals. We use Extreme Ultraviolet Lithography (EUVL) to define the electrical test platform features. As fabricated, the platform includes nominal electrode gaps of 0 nm, 40 nm, 60 nm, and 80 nm. Additional variation in electrode gap is achieved by controlling the exposure conditions, such as dose and focus. To enable EUVL based nanofabrication, we develop a novel bi-level photoresist process. The bi-level photoresist consists of a combination of a commercially available polydimethylglutarimide (PMGI) bottom layer and an experimental EUVL photoresistmore » top (imaging) layer. We measure the sensitivity of PMGI to EUV exposure dose as a function of photoresist pre-bake temperature, and using this data, optimize a metal lift-off process. Reliable fabrication of 700 Angstrom thick Au structures with sub-1000 Angstrom critical dimensions is achieved, even without the use of a Au adhesion layer, such as Ti. Several test platforms are used to characterize electrical properties of organic molecules deposited as self assembled monolayers.« less

Development of plenoptic infrared camera using low dimensional material based photodetectors

NASA Astrophysics Data System (ADS)

Chen, Liangliang

Infrared (IR) sensor has extended imaging from submicron visible spectrum to tens of microns wavelength, which has been widely used for military and civilian application. The conventional bulk semiconductor materials based IR cameras suffer from low frame rate, low resolution, temperature dependent and highly cost, while the unusual Carbon Nanotube (CNT), low dimensional material based nanotechnology has been made much progress in research and industry. The unique properties of CNT lead to investigate CNT based IR photodetectors and imaging system, resolving the sensitivity, speed and cooling difficulties in state of the art IR imagings. The reliability and stability is critical to the transition from nano science to nano engineering especially for infrared sensing. It is not only for the fundamental understanding of CNT photoresponse induced processes, but also for the development of a novel infrared sensitive material with unique optical and electrical features. In the proposed research, the sandwich-structured sensor was fabricated within two polymer layers. The substrate polyimide provided sensor with isolation to background noise, and top parylene packing blocked humid environmental factors. At the same time, the fabrication process was optimized by real time electrical detection dielectrophoresis and multiple annealing to improve fabrication yield and sensor performance. The nanoscale infrared photodetector was characterized by digital microscopy and precise linear stage in order for fully understanding it. Besides, the low noise, high gain readout system was designed together with CNT photodetector to make the nano sensor IR camera available. To explore more of infrared light, we employ compressive sensing algorithm into light field sampling, 3-D camera and compressive video sensing. The redundant of whole light field, including angular images for light field, binocular images for 3-D camera and temporal information of video streams, are extracted and

Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications.

PubMed

Hossain, Mozakkar; Kumar, Gundam Sandeep; Barimar Prabhava, S N; Sheerin, Emmet D; McCloskey, David; Acharya, Somobrata; Rao, K D M; Boland, John J

2018-05-22

Optically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.

Highly sensitive visible to infrared MoTe2 photodetectors enhanced by the photogating effect

NASA Astrophysics Data System (ADS)

Huang, Hai; Wang, Jianlu; Hu, Weida; Liao, Lei; Wang, Peng; Wang, Xudong; Gong, Fan; Chen, Yan; Wu, Guangjian; Luo, Wenjin; Shen, Hong; Lin, Tie; Sun, Jinglan; Meng, Xiangjian; Chen, Xiaoshuang; Chu, Junhao

2016-11-01

Two-dimensional materials are promising candidates for electronic and optoelectronic applications. MoTe2 has an appropriate bandgap for both visible and infrared light photodetection. Here we fabricate a high-performance photodetector based on few-layer MoTe2. Raman spectral properties have been studied for different thicknesses of MoTe2. The photodetector based on few-layer MoTe2 exhibits broad spectral range photodetection (0.6-1.55 μm) and a stable and fast photoresponse. The detectivity is calculated to be 3.1 × 109 cm Hz1/2 W-1 for 637 nm light and 1.3 × 109 cm Hz1/2 W-1 for 1060 nm light at a backgate voltage of 10 V. The mechanisms of photocurrent generation have been analyzed in detail, and it is considered that a photogating effect plays an important role in photodetection. The appreciable performance and detection over a broad spectral range make it a promising material for high-performance photodetectors.

Highly sensitive PMOS photodetector with wide band responsivity assisted by nanoporous anodic aluminum oxide membrane

NASA Astrophysics Data System (ADS)

Chen, Yung Ting; Chen, Yang Fang

2010-03-01

A new approach for developing highly sensitive PMOS photodetector based on the assistance of AAO membrane is proposed, fabricated, and characterized. It enables the photodetector with the tunability of not only the intensity but also the range of the response. Under a forward bias, the response of the PMOS photodetector with AAO membrane covers the visible as well as infrared spectrum; however, under a reverse bias, the near-infrared light around Si band edge dominates the photoresponse. Notably, the response at the optical communication wavelength of 850 nm can reach up to 0.24 A/W with an external quantum efficiency of 35%. Moreover, the response shows a large enhancement factor of 10 times at 1050 nm under a reverse bias of 0.5 V comparing with the device without AAO membrane. The underlying mechanism for the novel properties of the newly designed device has been proposed.

Design and fabrication of engineering model fiber-optics detector

NASA Technical Reports Server (NTRS)

Mcsweeney, A.

1972-01-01

The design and fabrication of an annular ring detector consisting of optical fibers terminated with photodetectors is described. The maximum width of each concentric ring has to be small enough to permit the resolution of a Ronchi ruling transform with a dot spacing of 150 microns. A minimum of 100 concentric rings covering a circular area of 2.54 cm diameter also is necessary. A fiber-optic array consisting of approximately 89,000 fibers of 76 microns diameter was fabricated to meet the above requirements. The fibers within a circular area of 2.5 cm diameter were sorted into 168 adjacent rings concentric with the center fiber. The response characteristics of several photodetectors were measured, and the data used to compare their linearity of response and dynamic range. Also, coupling loss measurements were made for three different methods of terminating the optical fibers with a photodetector.

Photodetectors for Nuclear Medical Imaging

PubMed Central

Moses, William W.

2009-01-01

There have been a number of recent advances in photodetector technology, notably in photomultiplier tubes with high quantum efficiency (up to ~50%), hybrid photodetectors, and silicon-based Geiger-mode photodetectors. This paper looks at the potential benefits that these technologies can bring to nuclear medicine, notably SPECT and PET. We find that while the potential benefits to SPECT are relatively small, they can bring performance improvements in many areas for PET. PMID:20161403

Wide-Band, High-Quantum-Efficiency Photodetector

NASA Technical Reports Server (NTRS)

Jackson, Deborah; Wilson, Daniel; Stern, Jeffrey

2007-01-01

A design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of optiA design has been proposed for a photodetector that would exhibit a high quantum efficiency (as much as 90 percent) over a wide wavelength band, which would typically be centered at a wavelength of 1.55 m. This and similar photodetectors would afford a capability for detecting single photons - a capability that is needed for research in quantum optics as well as for the practical development of secure optical communication systems for distribution of quantum cryptographic keys. The proposed photodetector would be of the hot-electron, phonon-cooled, thin-film superconductor type. The superconducting film in this device would be a meandering strip of niobium nitride. In the proposed photodetector, the quantum efficiency would be increased through incorporation of opti-

Solution-processed nanocrystalline PbS on paper substrate with pencil traced electrodes as visible photodetector

NASA Astrophysics Data System (ADS)

Vankhade, Dhaval; Chaudhuri, Tapas K.

2018-04-01

Paper-based PbS photodetector sensitive in the visible spectrum is reported. Nanocrystalline PbS-on-paper devices are fabricated by a spin coating method on white paper (300 GSM) from a methanolic precursor solution. Photodetector cells of gap 0.2 cm and length 0.5 cm are prepared by drawing contacts by monolithic cretacolor 8B pencil. X-ray diffractometer confirmed the deposition of nanocrystalline PbS films with 14 nm crystallites. The SEM illustrated the uniform coating of nanocrystalline PbS thin films on cellulose fibres of papers having an average thickness of fibres are 10 µm. The linear J-V characteristics in dark and under illumination of light using graphite trace on nanocrystalline PbS-on-paper shows good ohmic contact. The resistivity of pencil trace is 30 Ω.cm. Spectral response measurements of photodetector reveal the excellent sensitivity from 400 to 700 nm with a peak at 550 nm. The best responsivity anddetectivity are 0.7 A/W and 1.4 × 1012 Jones respectively. These paper-based low-cost photodetectors devices have fast photoresponse and recovery without baseline deviation.

Synergistic Effect of Hybrid Multilayer In2Se3 and Nanodiamonds for Highly Sensitive Photodetectors.

PubMed

Zheng, Zhaoqiang; Yao, Jiandong; Xiao, Jun; Yang, Guowei

2016-08-10

Layered materials have rapidly established themselves as intriguing building blocks for next-generation photodetection platforms in view of their exotic electronic and optical attributes. However, both relatively low mobility and heavier electron effective mass limit layered materials for high-performance applications. Herein, we employed nanodiamonds (NDs) to promote the performance of multilayer In2Se3 photodetectors for the first time. This hybrid NDs-In2Se3 photodetector showed a tremendous promotion of photodetection performance in comparison to pristine In2Se3 ones. This hybrid devices exhibited remarkable detectivity (5.12 × 10(12) jones), fast response speed (less than 16.6 ms), and decent current on/off ratio (∼2285) simultaneously. These parameters are superior to most reported layered materials based photodetectors and even comparable to the state-of-the-art commercial photodetectors. Meanwhile, we attributed this excellent performance to the synergistic effect between NDs and the In2Se3. They can greatly enhance the broad spectrum absorption and promote the injection of photoexcited carrier in NDs to In2Se3. These results actually open up a new scenario for designing and fabricating innovative optoelectronic systems.

Study of metal/ZnO based thin film ultraviolet photodetectors: The effect of induced charges on the dynamics of photoconductivity relaxation

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-02-01

Ultraviolet photoconductivity relaxation in ZnO thin films deposited by rf magnetron sputtering are investigated. Effect of oxygen partial pressure in the reactive gas mixture and film thickness on the photoconductivity transients is studied. A different photodetector configuration comprising ZnO thin film with an ultrathin overlayer of metals like Cu, Al, Sn, Au, Cr, and Te was designed and tested. Photoresponse signal were found to be stronger (four to seven times) in these configurations than the pure ZnO thin films. Sn(30 nm)/ZnO sample exhibits highest responsivity of ˜8.57 kV/W whereas Te(20 nm)/ZnO structure presents highest sensitivity of ˜31.3×103 compared to unloaded ZnO thin film. Enhancement in the photoresponse of ZnO thin films is attributed to the change in surface conductivity due to induced charge carriers at the interface because of the difference in work function and oxygen affinity values of metal overlayer with the underlying semiconducting layer. Charge carrier transfer from the metal layer to ZnO creates a surplus of electrons at the interface; a fraction of which are captured by the defect centers (traps) at the surface whereas the remaining one represents free carriers in the conduction band and are responsible for the enhanced photoconductivity.

Photochemical cutting of fabrics

DOEpatents

Piltch, Martin S.

1994-01-01

Apparatus for the cutting of garment patterns from one or more layers of fabric. A laser capable of producing laser light at an ultraviolet wavelength is utilized to shine light through a pattern, such as a holographic phase filter, and through a lens onto the one or more layers of fabric. The ultraviolet laser light causes rapid photochemical decomposition of the one or more layers of fabric, but only along the pattern. The balance of the fabric of the one or more layers of fabric is undamaged.

High Operating Temperature and Low Power Consumption Boron Nitride Nanosheets Based Broadband UV Photodetector

PubMed Central

Rivera, Manuel; Velázquez, Rafael; Aldalbahi, Ali; Zhou, Andrew F.; Feng, Peter

2017-01-01

We extend our work on the use of digitally controlled pulsed laser plasma deposition (PLPD) technique to synthesize high quality, 2-dimensional single crystalline boron nitride nanosheets (BNNSs) at a low substrate temperature for applications in high-performance deep UV photodetectors. The obtained sample consists of a large amount of BNNSs partially overlapping one another with random orientations. Each sheet is composed of a few (from 2 to 10) stacked atomic layers exhibiting high transparency due to its highly ordered hBN crystallinity. Deep UV detectors based on the obtained BNNSs were designed, fabricated, and tested. The bias and temperature effects on the photocurrent strength and the signal-to-noise ratio have been carefully characterized and discussed. A significant shift in the cut off wavelength of the BNNSs based photodetectors was observed suggesting a band gap reduction as a result of the BNNSs’ collective structure. The newly designed photodetector presented exceptional properties: a high sensitivity to weak intensities of radiation in both UVC and UVB range while remaining visible-blind, and a high signal-to-noise ratio operation even at temperatures as high as 400 °C. In addition, the BNNSs based photodetector exhibited potential for self-powered operation. PMID:28256507

An Enhanced UV-Vis-NIR an d Flexible Photodetector Based on Electrospun ZnO Nanowire Array/PbS Quantum Dots Film Heterostructure.

PubMed

Zheng, Zhi; Gan, Lin; Zhang, Jianbing; Zhuge, Fuwei; Zhai, Tianyou

2017-03-01

ZnO nanostructure-based photodetectors have a wide applications in many aspects, however, the response range of which are mainly restricted in the UV region dictated by its bandgap. Herein, UV-vis-NIR sensitive ZnO photodetectors consisting of ZnO nanowires (NW) array/PbS quantum dots (QDs) heterostructures are fabricated through modified electrospining method and an exchanging process. Besides wider response region compared to pure ZnO NWs based photodetectors, the heterostructures based photodetectors have faster response and recovery speed in UV range. Moreover, such photodetectors demonstrate good flexibility as well, which maintain almost constant performances under extreme (up to 180°) and repeat (up to 200 cycles) bending conditions in UV-vis-NIR range. Finally, this strategy is further verified on other kinds of 1D nanowires and 0D QDs, and similar enhancement on the performance of corresponding photodetecetors can be acquired, evidencing the universality of this strategy.

A Surface Plasmon Enhanced Infrared Photodetector Based on InAs Quantum Dots

DTIC Science & Technology

2010-01-01

mance of QD infrared detector to a level that is compatible to the widely used, conventional MCT infrared detector . Acknowledgment. S.Y.L. gratefully...amenable to large scale fabrication and, more importantly, does not degrade the noise current characteristics of the photodetector. We believe that this...demonstration would bring the performance of QD-based infrared detectors to a level suitable for emerging surveillance and medical diagnostic

A MoTe2 based light emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Heuck, M.; Grosso, G.; Furchi, M.; Cao, Y.; Zheng, J.; Navarro-Moratalla, E.; Zhou, L.; Taniguchi, T.; Watanabe, K.; Kong, J.; Englund, D.; Jarillo-Herrero, P.

A key challenge in photonics today is to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, partly because many components such as waveguides, interferometers and modulators, could be integrated on silicon-based processors. However, light sources and photodetectors present continued challenges. Common approaches for light source include off-chip or wafer-bonded lasers based on III-V materials, but studies show advantages for directly modulated light sources. The most advanced photodetectors in silicon photonics are based on germanium growth which increases system cost. The emerging two dimensional transition metal dichalcogenides (TMDs) offer a path for optical interconnects components that can be integrated with the CMOS processing by back-end-of-the-line processing steps. Here we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with infrared band gap. The state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

High Detectivity Graphene-Silicon Heterojunction Photodetector.

PubMed

Li, Xinming; Zhu, Miao; Du, Mingde; Lv, Zheng; Zhang, Li; Li, Yuanchang; Yang, Yao; Yang, Tingting; Li, Xiao; Wang, Kunlin; Zhu, Hongwei; Fang, Ying

2016-02-03

A graphene/n-type silicon (n-Si) heterojunction has been demonstrated to exhibit strong rectifying behavior and high photoresponsivity, which can be utilized for the development of high-performance photodetectors. However, graphene/n-Si heterojunction photodetectors reported previously suffer from relatively low specific detectivity due to large dark current. Here, by introducing a thin interfacial oxide layer, the dark current of graphene/n-Si heterojunction has been reduced by two orders of magnitude at zero bias. At room temperature, the graphene/n-Si photodetector with interfacial oxide exhibits a specific detectivity up to 5.77 × 10(13) cm Hz(1/2) W(-1) at the peak wavelength of 890 nm in vacuum, which is highest reported detectivity at room temperature for planar graphene/Si heterojunction photodetectors. In addition, the improved graphene/n-Si heterojunction photodetectors possess high responsivity of 0.73 A W(-1) and high photo-to-dark current ratio of ≈10(7) . The current noise spectral density of the graphene/n-Si photodetector has been characterized under ambient and vacuum conditions, which shows that the dark current can be further suppressed in vacuum. These results demonstrate that graphene/Si heterojunction with interfacial oxide is promising for the development of high detectivity photodetectors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance

NASA Astrophysics Data System (ADS)

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-01

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV–vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na2SO4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm‑2, while an enhanced responsivity (1.8 μA W‑1) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.

Two-dimensional bismuth nanosheets as prospective photo-detector with tunable optoelectronic performance.

PubMed

Huang, Hao; Ren, Xiaohui; Li, Zhongjun; Wang, Huide; Huang, Zongyu; Qiao, Hui; Tang, Pinghua; Zhao, Jinlai; Liang, Weiyuan; Ge, Yanqi; Liu, Jie; Li, Jianqing; Qi, Xiang; Zhang, Han

2018-06-08

Two dimensional Bi nanosheets have been employed to fabricate electrodes for broadband photo-detection. A series of characterization techniques including scanning electron microscopy and high-resolution transmission electron microscopy have verified that Bi nanosheets with intact lamellar structure have been obtained after facile liquid phase exfoliation. In the meanwhile, UV-vis and Raman spectra are also carried out and the inherent optical and physical properties of Bi nanosheets are confirmed. Inherited from the topological characteristics of Bi bulk counterpart, the resultant Bi nanosheet-based photo-detector exhibits preferable photo-response activity as well as environmental robustness. We then evaluate the photo-electrochemical (PEC) performance of the photodetector in 1 M NaOH and 0.5 M Na 2 SO 4 electrolytes, and demonstrated that the as-prepared Bi nanosheets may possess a great potential as PEC-type photo-detector. Additional PEC measurements show that the current density of Bi nanosheets can reach up to 830 nA cm -2 , while an enhanced responsivity (1.8 μA W -1 ) had been achieved. We anticipate that this contribution can provide feasibility towards the construction of high-performance elemental Bi nanosheets-based optoelectronic devices in the future.

Heterojunction photodetector based on graphene oxide sandwiched between ITO and p-Si

NASA Astrophysics Data System (ADS)

Ahmad, H.; Tajdidzadeh, M.; Thandavan, T. M. K.

2018-02-01

The drop casting method is utilized on indium tin oxide (ITO)-coated glass in order to prepare a sandwiched ITO/graphene oxide (ITO/GO) with silicon dioxide/p-type silicon (SiO2/p-Si) heterojunction photodetector. The partially sandwiched GO layer with SiO2/p-Si substrate exhibits dual characteristics as it showed good sensitivity towards the illumination of infrared (IR) laser at wavelength of 974 nm. Excellent photoconduction is also observed for current-voltage (I-V) characteristics at various laser powers. An external quantum efficiency greater than 1 for a direct current bias voltage of 0 and 3 V reveals significant photoresponsivity of the photodetector at various laser frequency modulation at 1, 5 and 9 Hz. The rise times are found to be 75, 72 and 70 μs for 1, 5 and 9 Hz while high fall times 455, 448 and 426 are measured for the respective frequency modulation. The fabricated ITO/GO-SiO2/p-Si sandwiched heterojunction photodetector can be considered as a good candidate for applications in the IR regions that do not require a high-speed response.

Visible scintillation photodetector device incorporating chalcopyrite semiconductor crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stowe, Ashley C.; Burger, Arnold

2017-04-04

A photodetector device, including: a scintillator material operable for receiving incident radiation and emitting photons in response; a photodetector material coupled to the scintillator material operable for receiving the photons emitted by the scintillator material and generating a current in response, wherein the photodetector material includes a chalcopyrite semiconductor crystal; and a circuit coupled to the photodetector material operable for characterizing the incident radiation based on the current generated by the photodetector material. Optionally, the scintillator material includes a gamma scintillator material and the incident radiation received includes gamma rays. Optionally, the photodetector material is further operable for receiving thermalmore » neutrons and generating a current in response. The circuit is further operable for characterizing the thermal neutrons based on the current generated by the photodetector material.« less

Photodetectors using III-V nitrides

DOEpatents

Moustakas, Theodore D.; Misra, Mira

1997-01-01

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.

Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet photodetector based on lateral epitaxial overgrowth of AlN on Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cicek, E.; McClintock, R.; Cho, C. Y.

2013-10-28

We report on Al{sub x}Ga{sub 1−x}N-based solar-blind ultraviolet (UV) photodetector (PD) grown on Si(111) substrate. First, Si(111) substrate is patterned, and then metalorganic chemical vapor deposition is implemented for a fully-coalesced ∼8.5 μm AlN template layer via a pulsed atomic layer epitaxial growth technique. A back-illuminated p-i-n PD structure is subsequently grown on the high quality AlN template layer. After processing and implementation of Si(111) substrate removal, the optical and electrical characteristic of PDs are studied. Solar-blind operation is observed throughout the array; at the peak detection wavelength of 290 nm, 625 μm{sup 2} area PD showed unbiased peak externalmore » quantum efficiency and responsivity of ∼7% and 18.3 mA/W, respectively, with a UV and visible rejection ratio of more than three orders of magnitude. Electrical measurements yielded a low-dark current density below 1.6 × 10{sup −8} A/cm{sup 2} at 10 V reverse bias.« less

Photodetectors using III-V nitrides

DOEpatents

Moustakas, T.D.; Misra, M.

1997-10-14

A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.

Sonochemical Synthesis of a Zinc Oxide Core-Shell Nanorod Radial p-n Homojunction Ultraviolet Photodetector.

PubMed

Vabbina, Phani Kiran; Sinha, Raju; Ahmadivand, Arash; Karabiyik, Mustafa; Gerislioglu, Burak; Awadallah, Osama; Pala, Nezih

2017-06-14

We report for the first time on the growth of a homogeneous radial p-n junction in the ZnO core-shell configuration with a p-doped ZnO nanoshell structure grown around a high-quality unintentionally n-doped ZnO nanorod using sonochemistry. The simultaneous decomposition of phosphorous (P), zinc (Zn), and oxygen (O) from their respective precursors during sonication allows for the successful incorporation of P atoms into the ZnO lattice. The as-formed p-n junction shows a rectifying current-voltage characteristic that is consistent with a p-n junction with a threshold voltage of 1.3 V and an ideality factor of 33. The concentration of doping was estimated to be N A = 6.7 × 10 17 cm -3 on the p side from the capacitance-voltage measurements. The fabricated radial p-n junction demonstrated a record optical responsivity of 9.64 A/W and a noise equivalent power of 0.573 pW/√Hz under ultraviolet illumination, which is the highest for ZnO p-n junction devices.

Broadband Ge/SiGe quantum dot photodetector on pseudosubstrate

PubMed Central

2013-01-01

We report the fabrication and characterization of a ten-period Ge quantum dot photodetector grown on SiGe pseudosubstrate. The detector exhibits tunable photoresponse in both 3- to 5- μm and 8- to 12- μm spectral regions with responsivity values up to about 1 mA/W at a bias of −3 V and operates under normal incidence radiation with background limited performance at 100 K. The relative response in the mid- and long-wave atmospheric windows could be controlled through the applied voltage. PMID:23651470

Photo-electrochemically synthesized light emtting nanoporous silicon based UV photodetector: influence of current density

NASA Astrophysics Data System (ADS)

Thahe, Asad A.; Bidin, Noriah; Hassan, Z.; Bakhtiar, Hazri; Qaeed, M. A.; Bououdina, Mohamed; Ahmed, Naser M.; Talib, Zainal A.; Al-Azawi, Mohammed A.; Alqaraghuli, Hasan; Uday, M. B.; Hamad Ahmed, Omar

2017-11-01

Nanoporous silicon (n-PSi) with diverse morphologies was prepared on silicon (Si) substrate via photo-electrochemical etching technique. The role of changing current density (15, 30 and 45 mA cm-2) on the structure, morphology and optical properties was determined. As-prepared samples were systematically characterized using XRD, FESEM, AFM and photoluminescence measurements. Furthermore, the achieved n-PSi sample was used to make metal-semiconductor-metal (MSM) UV photodetector. The performance of these photodetectors was evaluated upon exposing to visible light of wavelength 530 nm (power density 1.55 mW cm-2), which exhibited very high sensitivity of 150.26 with a low dark current. The achieved internal photoconductive gain was 2.50, the photoresponse peak was 1.23 A W-1 and the response time was 0.49 s and the recovery time was 0.47 s. Excellent attributes of the fabricated photodetectors suggest that the present approach may provide a cost effective and simple way to obtain n-PSi suitable for sundry applications.

Phase-Engineered Type-II Multimetal-Selenide Heterostructures toward Low-Power Consumption, Flexible, Transparent, and Wide-Spectrum Photoresponse Photodetectors.

PubMed

Chen, Yu-Ze; Wang, Sheng-Wen; Su, Teng-Yu; Lee, Shao-Hsin; Chen, Chia-Wei; Yang, Chen-Hua; Wang, Kuangye; Kuo, Hao-Chung; Chueh, Yu-Lun

2018-05-01

Phase-engineered type-II metal-selenide heterostructures are demonstrated by directly selenizing indium-tin oxide to form multimetal selenides in a single step. The utilization of a plasma system to assist the selenization facilitates a low-temperature process, which results in large-area films with high uniformity. Compared to single-metal-selenide-based photodetectors, the multimetal-selenide photodetectors exhibit obviously improved performance, which can be attributed to the Schottky contact at the interface for tuning the carrier transport, as well as the type-II heterostructure that is beneficial for the separation of the electron-hole pairs. The multimetal-selenide photodetectors exhibit a response to light over a broad spectrum from UV to visible light with a high responsivity of 0.8 A W -1 and an on/off current ratio of up to 10 2 . Interestingly, all-transparent photodetectors are successfully produced in this work. Moreover, the possibility of fabricating devices on flexible substrates is also demonstrated with sustainable performance, high strain tolerance, and high durability during bending tests. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultra-wide bandgap beta-Ga2O3 for deep-UV solar blind photodetectors(Conference Presentation)

NASA Astrophysics Data System (ADS)

Rafique, Subrina; Han, Lu; Zhao, Hongping

2017-03-01

Deep-ultraviolet (DUV) photodetectors based on wide bandgap (WB) semiconductor materials have attracted strong interest because of their broad applications in military surveillance, fire detection and ozone hole monitoring. Monoclinic β-Ga2O3 with ultra-wide bandgap of 4.9 eV is a promising candidate for such application because of its high optical transparency in UV and visible wavelength region, and excellent thermal and chemical stability at elevated temperatures. Synthesis of high qualityβ-Ga2O3 thin films is still at its early stage and knowledge on the origins of defects in this material is lacking. The conventional epitaxy methods used to grow β-Ga2O3 thin films such as molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) still face great challenges such as limited growth rate and relatively high defects levels. In this work, we present the growth of β-Ga2O3 thin films on c-plane (0001) sapphire substrate by our recently developed low pressure chemical vapor deposition (LPCVD) method. The β-Ga2O3 thin films synthesized using high purity metallic gallium and oxygen as the source precursors and argon as carrier gas show controllable N-type doping and high carrier mobility. Metal-semiconductor-metal (MSM) photodetectors (PDs) were fabricated on the as-grown β-Ga2O3 thin films. Au/Ti thin films deposited by e-beam evaporation served as the contact metals. Optimization of the thin film growth conditions and the effects of thermal annealing on the performance of the PDs were investigated. The responsivity of devices under 250 nm UV light irradiation as well as dark light will be characterized and compared.

Lateral amorphous selenium metal-insulator-semiconductor-insulator-metal photodetectors using ultrathin dielectric blocking layers for dark current suppression

NASA Astrophysics Data System (ADS)

Chang, Cheng-Yi; Pan, Fu-Ming; Lin, Jian-Siang; Yu, Tung-Yuan; Li, Yi-Ming; Chen, Chieh-Yang

2016-12-01

We fabricated amorphous selenium (a-Se) photodetectors with a lateral metal-insulator-semiconductor-insulator-metal (MISIM) device structure. Thermal aluminum oxide, plasma-enhanced chemical vapor deposited silicon nitride, and thermal atomic layer deposited (ALD) aluminum oxide and hafnium oxide (ALD-HfO2) were used as the electron and hole blocking layers of the MISIM photodetectors for dark current suppression. A reduction in the dark current by three orders of magnitude can be achieved at electric fields between 10 and 30 V/μm. The effective dark current suppression is primarily ascribed to electric field lowering in the dielectric layers as a result of charge trapping in deep levels. Photogenerated carriers in the a-Se layer can be transported across the blocking layers to the Al electrodes via Fowler-Nordheim tunneling because a high electric field develops in the ultrathin dielectric layers under illumination. Since the a-Se MISIM photodetectors have a very low dark current without significant degradation in the photoresponse, the signal contrast is greatly improved. The MISIM photodetector with the ALD-HfO2 blocking layer has an optimal signal contrast more than 500 times the contrast of the photodetector without a blocking layer at 15 V/μm.

A fast and zero-biased photodetector based on GaTe-InSe vertical 2D p-n heterojunction

NASA Astrophysics Data System (ADS)

Feng, W.; Jin, Z.; Yuan, J.; Zhang, J.; Jia, S.; Dong, L.; Yoon, J.; Zhou, L.; Vajtai, R.; Tour, J. M.; Ajayan, P. M.; Hu, P.; Lou, J.

2018-04-01

p-n junctions serve as the building blocks for fundamental semiconductor devices, such as solar cells, light-emitting diodes (LEDs) and photodetectors. With recent studies unveiling the excellent optoelectronic properties of two-dimensional (2D) semiconductors, they are considered to be superb candidates for high performance p-n junctions. Here, we fabricate a vertical GaTe-InSe van der Waals (vdWs) p-n heterojunction by a PDMS-assisted transfer technique without etching. The fabricated p-n heterojunction shows gate-tunable current-rectifying behavior with a rectification factor reaching 1000. In addition, it features fast photodetection under zero bias as well as a high power conversion efficiency (PCE). Under 405 nm laser excitation, the zero-biased photodetector shows a high responsivity of 13.8 mA W-1 as well as a high external quantum efficiency (EQE) of 4.2%. Long-term stability is also observed and a response time of 20 µs is achieved due to stable and fast carrier transit through the built-in electric field in the depletion region. Fast and efficient charge separation in the vertical 2D p-n junction paves the way for developing 2D photodetectors with zero dark current, high speed and low power consumption.

Photodetector based on carbon nanotubes

NASA Astrophysics Data System (ADS)

Pavlov, A.; Kitsyuk, E.; Ryazanov, R.; Timoshenkov, V.; Adamov, Y.

2015-09-01

Photodetector based on carbon nanotubes (CNT) was investigated. Sensors were done on quartz and silicon susbtrate. Samples of photodetectors sensors were produced by planar technology. This technology included deposition of first metal layer (Al), lithography for pads formation, etching, and formation of local catalyst area by inverse lithography. Vertically-aligned multi-wall carbon nanotubes were directly synthesized on substrate by PECVD method. I-V analysis and spectrum sensitivity of photodetector were investigated for 0.4 μm - 1.2 μm wavelength. Resistivity of CNT layers over temperature was detected in the range of -20°C to 100°C.

Design and fabrication of a reflection far ultraviolet polarizer and retarder

NASA Technical Reports Server (NTRS)

Kim, Jongmin; Zukic, Muamer; Wilson, Michele M.; Torr, Douglas G.

1993-01-01

New methods have been developed for the design of a far ultraviolet multilayer reflection polarizer and retarder. A MgF2/Al/MgF2 three-layer structure deposited on a thick opaque Al film (substrate) is used for the design of polarizers and retarders. The induced transmission and absorption method is used for the design of a polarizer and layer-by-layer electric field calculation method is used for the design of a quarterwave retarder. In order to fabricate these designs in a conventional high vacuum chamber, we have to minimize the oxidation of the Al layers and somehow characterize the oxidized layer. X-ray photoelectron spectroscopy is used to investigate the amount and profile of oxidation. Depth profiling results and a seven layer oxidation model are presented.

Electro-optical study of nanoscale Al-Si-truncated conical photodetector with subwavelength aperture

NASA Astrophysics Data System (ADS)

Karelits, Matityahu; Mandelbaum, Yaakov; Chelly, Avraham; Karsenty, Avi

2017-10-01

A type of silicon photodiode has been designed and simulated to probe the optical near field and detect evanescent waves. These waves convey subwavelength resolution. This photodiode consists of a truncated conical shaped, silicon Schottky diode having a subwavelength aperture of 150 nm. Electrical and electro-optical simulations have been conducted. These results are promising toward the fabrication of a new generation of photodetector devices.

Annealing Time Effect on Nanostructured n-ZnO/p-Si Heterojunction Photodetector Performance

NASA Astrophysics Data System (ADS)

Habubi, Nadir. F.; Ismail, Raid. A.; Hamoudi, Walid K.; Abid, Hassam. R.

2015-02-01

In this work, n-ZnO/p-Si heterojunction photodetectors were prepared by drop casting of ZnO nanoparticles (NPs) on single crystal p-type silicon substrates, followed by (15-60) min; step-annealing at 600∘C. Structural, electrical, and optical properties of the ZnO NPs films deposited on quartz substrates were studied as a function of annealing time. X-ray diffraction studies showed a polycrystalline, hexagonal wurtizte nanostructured ZnO with preferential orientation along the (100) plane. Atomic force microscopy measurements showed an average ZnO grain size within the range of 75.9 nm-99.9 nm with a corresponding root mean square (RMS) surface roughness between 0.51 nm-2.16 nm. Dark and under illumination current-voltage (I-V) characteristics of the n-ZnO/p-Si heterojunction photodetectors showed an improving rectification ratio and a decreasing saturation current at longer annealing time with an ideality factor of 3 obtained at 60 min annealing time. Capacitance-voltage (C-V) characteristics of heterojunctions were investigated in order to estimate the built-in-voltage and junction type. The photodetectors, fabricated at optimum annealing time, exhibited good linearity characteristics. Maximum sensitivity was obtained when ZnO/Si heterojunctions were annealed at 60 min. Two peaks of response, located at 650 nm and 850 nm, were observed with sensitivities of 0.12-0.19 A/W and 0.18-0.39 A/W, respectively. Detectivity of the photodetectors as function of annealing time was estimated.

Towards an all-in fiber photodetector by directly bonding few-layer molybdenum disulfide to a fiber facet.

PubMed

Chen, Jin-Hui; Liang, Zhao-Huan; Yuan, Lie-Rong; Li, Cheng; Chen, Min-Rui; Xia, Yi-Dong; Zhang, Xue-Jin; Xu, Fei; Lu, Yan-Qing

2017-03-09

Although photodetectors based on two dimensional (2D) materials have been intensively studied, there are few reports of optical fiber compatible devices. Herein we successfully fabricated an all-in fiber photodetector (FPD) based on an end-face bonded with few-layer molybdenum disulfide (MoS 2 ). Our FPD has a considerably high photo-responsivity of ∼0.6 A W -1 at a bias voltage of 4 V and 0.01 A W -1 under the bias-free conditions. We believe that the proposed platform may provide a new strategy for the integration of 2D materials in fibers and realization of optoelectronic and sensing applications.

An evaluation of UV protection imparted by cotton fabrics dyed with natural colorants

PubMed Central

Sarkar, Ajoy K

2004-01-01

Background The ultraviolet properties of textiles dyed with synthetic dyes have been widely reported in literature. However, no study has investigated the ultraviolet properties of natural fabrics dyed with natural colorants. This study reports the Ultraviolet Protection Factor (UPF) of cotton fabrics dyed with colorants of plant and insect origins. Methods Three cotton fabrics were dyed with three natural colorants. Fabrics were characterized with respect to fabric construction, weight, thickness and thread count. Influence of fabric characteristics on Ultraviolet Protection Factor was studied. Role of colorant concentration on the ultraviolet protection factor was examined via color strength analysis. Results A positive correlation was observed between the weight of the fabric and their UPF values. Similarly, thicker fabrics offered more protection from ultraviolet rays. Thread count appears to negatively correlate with UPF. Dyeing with natural colorants dramatically increased the protective abilities of all three fabric constructions. Additionally, within the same fabric type UPF values increased with higher depths of shade. Conclusion Dyeing cotton fabrics with natural colorants increases the ultraviolet protective abilities of the fabrics and can be considered as an effective protection against ultraviolet rays. The UPF is further enhanced with colorant of dark hues and with high concentration of the colorant in the fabric. PMID:15509304

An evaluation of UV protection imparted by cotton fabrics dyed with natural colorants.

PubMed

Sarkar, Ajoy K

2004-10-27

The ultraviolet properties of textiles dyed with synthetic dyes have been widely reported in literature. However, no study has investigated the ultraviolet properties of natural fabrics dyed with natural colorants. This study reports the Ultraviolet Protection Factor (UPF) of cotton fabrics dyed with colorants of plant and insect origins. Three cotton fabrics were dyed with three natural colorants. Fabrics were characterized with respect to fabric construction, weight, thickness and thread count. Influence of fabric characteristics on Ultraviolet Protection Factor was studied. Role of colorant concentration on the ultraviolet protection factor was examined via color strength analysis. A positive correlation was observed between the weight of the fabric and their UPF values. Similarly, thicker fabrics offered more protection from ultraviolet rays. Thread count appears to negatively correlate with UPF. Dyeing with natural colorants dramatically increased the protective abilities of all three fabric constructions. Additionally, within the same fabric type UPF values increased with higher depths of shade. Dyeing cotton fabrics with natural colorants increases the ultraviolet protective abilities of the fabrics and can be considered as an effective protection against ultraviolet rays. The UPF is further enhanced with colorant of dark hues and with high concentration of the colorant in the fabric.

Dot-in-Well Quantum-Dot Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Bandara, Sumith; Ting, David; Hill, cory; Liu, John; Mumolo, Jason; Chang, Yia Chung

2008-01-01

Dot-in-well (DWELL) quantum-dot infrared photodetectors (QDIPs) [DWELL-QDIPs] are subjects of research as potentially superior alternatives to prior QDIPs. Heretofore, there has not existed a reliable method for fabricating quantum dots (QDs) having precise, repeatable dimensions. This lack has constituted an obstacle to the development of uniform, high-performance, wavelength-tailorable QDIPs and of focal-plane arrays (FPAs) of such QDIPs. However, techniques for fabricating quantum-well infrared photodetectors (QWIPs) having multiple-quantum- well (MQW) structures are now well established. In the present research on DWELL-QDIPs, the arts of fabrication of QDs and QWIPs are combined with a view toward overcoming the deficiencies of prior QDIPs. The longer-term goal is to develop focal-plane arrays of radiationhard, highly uniform arrays of QDIPs that would exhibit high performance at wavelengths from 8 to 15 m when operated at temperatures between 150 and 200 K. Increasing quantum efficiency is the key to the development of competitive QDIP-based FPAs. Quantum efficiency can be increased by increasing the density of QDs and by enhancing infrared absorption in QD-containing material. QDIPs demonstrated thus far have consisted, variously, of InAs islands on GaAs or InAs islands in InGaAs/GaAs wells. These QDIPs have exhibited low quantum efficiencies because the numbers of QD layers (and, hence, the areal densities of QDs) have been small typically five layers in each QDIP. The number of QD layers in such a device must be thus limited to prevent the aggregation of strain in the InAs/InGaAs/GaAs non-lattice- matched material system. The approach being followed in the DWELL-QDIP research is to embed In- GaAs QDs in GaAs/AlGaAs multi-quantum- well (MQW) structures (see figure). This material system can accommodate a large number of QD layers without excessive lattice-mismatch strain and the associated degradation of photodetection properties. Hence, this material

Ultraviolet photodetector based on Mg{sub x}Zn{sub 1-x}O films using plasma-enhanced atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Yu-Chang; Lee, Hsin-Ying, E-mail: hylee@ee.ncku.edu.tw; Lee, Ching-Ting

2016-01-15

A plasma-enhanced atomic layer deposition (PE-ALD) system was used to deposit magnesium zinc oxide (Mg{sub x}Zn{sub 1−x}O) films with various Mg content (x). The Mg{sub x}Zn{sub 1-x}O films were applied to metal–semiconductor–metal ultraviolet (UV) photodetectors (MSM-UPDs) as an active layer. The Mg content in the Mg{sub x}Zn{sub 1-x}O films was modulated by adjusting the ZnO–MgO cycle ratios to 15:1, 12:1, and 9:1. Correspondingly, the Mg content in the Mg{sub x}Zn{sub 1-x}O films characterized using an energy dispersive spectrometer was 0.10, 0.13, and 0.16, respectively. The optical bandgap of the Mg{sub x}Zn{sub 1-x}O films increased from 3.56 to 3.66 eV withmore » an increase in Mg content from 0.10 to 0.16. The peak position of photoresponsivity for the Mg{sub x}Zn{sub 1-x}O MSM-UPDs was also shifted from 350 to 340 nm. The UV-visible rejection ratios of the Mg{sub x}Zn{sub 1-x}O MSM-UPDs were higher than 3 orders of magnitude. In addition, excellent detectivity and noise equivalent power for the Mg{sub x}Zn{sub 1-x}O MSM-UPDs were observed at a bias voltage of 5 V. The high performance of the Mg{sub x}Zn{sub 1-x}O MSM-UPDs was achieved by PE-ALD at a low temperature.« less

Topological Crystalline Insulator SnTe/Si Vertical Heterostructure Photodetectors for High-Performance Near-Infrared Detection.

PubMed

Zhang, Hongbin; Man, Baoyuan; Zhang, Qi

2017-04-26

Due to the gapless surface state and narrow bulk band gap, the light absorption of topological crystalline insulators covers a broad spectrum ranging from terahertz to infrared, revealing promising applications in new generation optoelectronic devices. To date, the photodetectors based on topological insulators generally suffer from a large dark current and a weaker photocurrent especially under the near-infrared lights, which severely limits the practical application of devices. Owing to the lower excitation energy of infrared lights, the photodetection application of topological crystalline insulators in the near-infrared region relies critically on understanding the preparation and properties of their heterostructures. Herein, we fabricate the high-quality topological crystalline insulator SnTe film/Si vertical heterostructure by a simple physical vapor deposition process. The resultant heterostructure exhibits an excellent diode characteristic, enabling the construction of high-performance near-infrared photodetectors. The built-in electric field at SnTe/Si interface enhances the absorption efficiency of near-infrared lights and greatly facilitates the separation of photogenerated carriers, making the device capable of operating as a self-driven photodetector. The as-grown SnTe film acts as the hole transport layer in heterostructure photodetectors, promoting the transport of holes to electrode and reducing electron-hole recombination effectively. These merits enable the SnTe/Si heterostructure photodetector to have a high responsivity of 2.36 AW -1 , a high detectivity of 1.54 × 10 14 Jones, and a large bandwidth of 10 4 Hz in the near-infrared wavelength, which makes the detector have a promising market in novel device applications.

Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids.

PubMed

Singh, Amol; Li, Xiangyang; Protasenko, Vladimir; Galantai, Gabor; Kuno, Masaru; Xing, Huili Grace; Jena, Debdeep

2007-10-01

Polarization-sensitive photodetectors are demonstrated using solution-synthesized CdSe nanowire (NW) solids. Photocurrent action spectra taken with a tunable white light source match the solution linear absorption spectra of the NWs, showing that the NW network is responsible for the device photoconductivity. Temperature-dependent transport measurements reveal that carriers responsible for the dark current through the nanowire solids are thermally excited across CdSe band gap. The NWs are aligned using dielectrophoresis between prepatterned electrodes using conventional optical photolithography. The photocurrent through the NW solid is found to be polarization-sensitive, consistent with complementary absorption (emission) measurements of both single wires and their ensembles. The range of solution-processed semiconducting NW materials, their facile synthesis, ease of device fabrication, and compatibility with a variety of substrates make them attractive for potential nanoscale polarization-sensitive photodetectors.

Split Bull's eye shaped aluminum antenna for plasmon-enhanced nanometer scale germanium photodetector.

PubMed

Ren, Fang-Fang; Ang, Kah-Wee; Ye, Jiandong; Yu, Mingbin; Lo, Guo-Qiang; Kwong, Dim-Lee

2011-03-09

Bull's eye antennas are capable of efficiently collecting and concentrating optical signals into an ultrasmall area, offering an excellent solution to break the bottleneck between speed and photoresponse in subwavelength photodetectors. Here, we exploit the idea of split bull's eye antenna for a nanometer germanium photodetector operating at a standard communication wavelength of 1310 nm. The nontraditional plasmonic metal aluminum has been implemented in the resonant antenna structure fabricated by standard complementary metal-oxide-semiconductor (CMOS) processing. A significant enhancement in photoresponse could be achieved over the conventional bull's eye scheme due to an increased optical near-field in the active region. Moreover, with this novel antenna design the effective grating area could be significantly reduced without sacrificing device performance. This work paves the way for the future development of low-cost, high-density, and high-speed CMOS-compatible germanium-based optoelectronic devices.

Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control.

PubMed

Lee, Sang-Won; Cha, Seung-Hwan; Choi, Kyung-Jae; Kang, Byoung-Ho; Lee, Jae-Sung; Kim, Sae-Wan; Kim, Ju-Seong; Jeong, Hyun-Min; Gopalan, Sai-Anand; Kwon, Dae-Hyuk; Kang, Shin-Won

2016-01-07

We propose a solution-processable ultraviolet (UV) photodetector with a pn-heterojunction hybrid photoactive layer (HPL) that is composed of poly-n-vinylcarbazole (PVK) as a p-type polymer and ZnO nanoparticles (NPs) as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL) spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 10³ higher than that of the dark current.

Low Dark-Current, High Current-Gain of PVK/ZnO Nanoparticles Composite-Based UV Photodetector by PN-Heterojunction Control

PubMed Central

Lee, Sang-Won; Cha, Seung-Hwan; Choi, Kyung-Jae; Kang, Byoung-Ho; Lee, Jae-Sung; Kim, Sae-Wan; Kim, Ju-Seong; Jeong, Hyun-Min; Gopalan, Sai-Anand; Kwon, Dae-Hyuk; Kang, Shin-Won

2016-01-01

We propose a solution-processable ultraviolet (UV) photodetector with a pn-heterojunction hybrid photoactive layer (HPL) that is composed of poly-n-vinylcarbazole (PVK) as a p-type polymer and ZnO nanoparticles (NPs) as an n-type metal oxide. To observe the effective photo-inducing ability of the UV photodetector, we analyzed the optical and electrical properties of HPL which is controlled by the doping concentration of n-type ZnO NPs in PVK matrix. Additionally, we confirmed that the optical properties of HPL dominantly depend on the ZnO NPs from the UV-vis absorption and the photoluminescence (PL) spectral measurements. This HPL can induce efficient charge transfer in the localized narrow pn-heterojunction domain and increases the photocurrent gain. It is essential that proper doping concentration of n-type ZnO NPs in polymer matrix is obtained to improve the performance of the UV photodetector. When the ZnO NPs are doped with the optimized concentration of 3.4 wt.%, the electrical properties of the photocurrent are significantly increased. The ratio of the photocurrent was approximately 103 higher than that of the dark current. PMID:26751453

Nanophotonic Hot Electron Solar-Blind Ultraviolet Detectors with a Metal-Oxide-Semiconductor Structure

NASA Astrophysics Data System (ADS)

Wang, Zhiyuan

Solar-blind ultraviolet detection refers to photon detection specifically in the wavelength range of 200 nm to 320 nm. Without background noises from solar radiation, it has broad applications from homeland security to environmental monitoring. In this thesis, we design and fabricate a nanophotonic metal-oxide-semiconductor device for solar-blind UV detection. Instead of using semiconductors as the active absorber, we use metal Sn nano- grating structures to absorb UV photons and generate hot electrons for internal photoemission across the Sn/SiO 2 interfacial barrier, thereby generating photocurrent between metal and semiconductor region upon UV excitation. The large metal/oxide interfacial energy barrier enables solar-blind UV detection by blocking the less energetic electrons excited by visible photons. With optimized design, 85% UV absorption and hot electron excitation can be achieved within the mean free path of 20 nm from the metal/oxide interface. This feature greatly enhances hot electron transport across the interfacial barrier to generate photocurrent. Various fabrication techniques have been developed for preparing nano gratings. For nominally 20 nm-thick deposited Sn, the self- formed pseudo-periodic nanostructure help achieve 75% UV absorption from lambda=200 nm to 300 nm. With another layer of nominally 20 nm-thick Sn, similar UV absorption is maintained while conductivity is improved, which is beneficial for overall device efficiency. The Sn/SiO2/Si MOS devices show good solar-blind character while achieving 13% internal quantum efficiency for 260 nm UV with only 20 nm-thick Sn and some devices demonstrate much higher (even >100%) internal quantum efficiency. While a more accurate estimation of device effective area is needed for proving our calculation, these results indeed show a great potential for this type of hot-electron-based photodetectors and for Sn nanostructure as an effective UV absorber. The simple geometry of the self- assembled Sn

Near-infrared photodetector with reduced dark current

DOEpatents

Klem, John F; Kim, Jin K

2012-10-30

A photodetector is disclosed for the detection of near-infrared light with a wavelength in the range of about 0.9-1.7 microns. The photodetector, which can be formed as either an nBp device or a pBn device on an InP substrate, includes an InGaAs light-absorbing layer, an InAlGaAs graded layer, an InAlAs or InP barrier layer, and an InGaAs contact layer. The photodetector can detect near-infrared light with or without the use of an applied reverse-bias voltage and is useful as an individual photodetector, or to form a focal plane array.

Small Business Innovations (Photodetector)

NASA Technical Reports Server (NTRS)

1991-01-01

Epitaxx, Inc. of Princeton, NJ, developed the Epitaxx Near Infrared Room Temperature Indium-Gallium-Arsenide (InGaAs) Photodetector based on their Goddard Space Flight Center Small Business Innovation Research (SBIR) contract work to develop a linear detector array for satellite imaging applications using InGaAs alloys that didn't need to be cooled to (difficult and expensive) cryogenic temperatures. The photodetectors can be used for remote sensing, fiber optic and laser position-sensing applications.

Towards metal chalcogenide nanowire-based colour-sensitive photodetectors

NASA Astrophysics Data System (ADS)

Butanovs, Edgars; Butikova, Jelena; Zolotarjovs, Aleksejs; Polyakov, Boris

2018-01-01

In recent years, nanowires have been shown to exhibit high photosensitivities, and, therefore are of interest in a variety of optoelectronic applications, for example, colour-sensitive photodetectors. In this study, we fabricated two-terminal PbS, In2S3, CdS and ZnSe single-nanowire photoresistor devices and tested applicability of these materials under the same conditions for colour-sensitive (405 nm, 532 nm and 660 nm) light detection. Nanowires were grown via atmospheric pressure chemical vapour transport method, their structure and morphology were characterized by scanning and transmission electron microscopy (SEM and TEM), X-ray diffraction (XRD), and optical properties were investigated with photoluminescence (PL) measurements. Single-nanowire photoresistors were fabricated via in situ nanomanipulations inside SEM, using focused ion beam (FIB) cutting and electron-beam-assisted platinum welding; their current-voltage characteristics and photoresponse values were measured. Applicability of the tested nanowire materials for colour-sensitive light detection is discussed.

In vitro assessment of ultraviolet protection of coloured cotton knitted fabrics with different structures under stretched and wet conditions.

PubMed

Wong, W Y; Lam, J K C; Kan, C W; Postle, R

2015-04-01

Clothing provides intrinsic ultraviolet (UV) protection that can be improved by colouration. However, the daily wearing condition can undermine the UV protection of coloured clothing wherein garments are stretched by body movement and/or wetted by perspiration of wearers. Knitwear is an indispensable clothing in summer, but its UV protection against wearing conditions lacks extensive study especially in a fabric structural approach. This article aimed at narrowing the research gap by focusing on the UV protection against stretch and wetness provided by various knitted fabric constructions incorporating the knit, tuck and miss stitches. The results show that the black knitted fabrics exhibit a significant reduction in the UV protection factor by 53% on average at a 10% stretch level. Knitted fabrics with miss stitches retained good UV protection even when the fabrics were stretched by 20% of its original dimensions. © The Author 2014. Published by Oxford University Press. All rights reserved. For Permissions, please email: journals.permissions@oup.com.

Highly sensitive wide bandwidth photodetector based on internal photoemission in CVD grown p-type MoS2/graphene Schottky junction.

PubMed

Vabbina, PhaniKiran; Choudhary, Nitin; Chowdhury, Al-Amin; Sinha, Raju; Karabiyik, Mustafa; Das, Santanu; Choi, Wonbong; Pala, Nezih

2015-07-22

Two dimensional (2D) Molybdenum disulfide (MoS2) has evolved as a promising material for next generation optoelectronic devices owing to its unique electrical and optical properties, such as band gap modulation, high optical absorption, and increased luminescence quantum yield. The 2D MoS2 photodetectors reported in the literature have presented low responsivity compared to silicon based photodetectors. In this study, we assembled atomically thin p-type MoS2 with graphene to form a MoS2/graphene Schottky photodetector where photo generated holes travel from graphene to MoS2 over the Schottky barrier under illumination. We found that the p-type MoS2 forms a Schottky junction with graphene with a barrier height of 139 meV, which results in high photocurrent and wide spectral range of detection with wavelength selectivity. The fabricated photodetector showed excellent photosensitivity with a maximum photo responsivity of 1.26 AW(-1) and a noise equivalent power of 7.8 × 10(-12) W/√Hz at 1440 nm.

Optimization Photodetectors from Zinc Sulfide Deposited on Porous Silicon with Different Doping Metals

NASA Astrophysics Data System (ADS)

Nayef, Uday Muhsin; Khalaf, Haider Amer

In this work, the structural properties of the zinc sulfide (ZnS) films have been investigated using X-ray diffraction (XRD) analysis which show an enhancement in the crystallite degree after doping with copper (Cu). Good matching between the ZnS and porous silicon (PS) structure was noted from the atomic force microscope (AFM) results. The reflectivity gave a clear observation of anti-reflected coating improvement for PS layer and more enhancements after the ZnS deposition. The optical properties show a blue shift in the bandgap for the ZnS deposited with higher substrate temperature and a red shift after doped with different elements. For ZnS/PS heterojunction, the electrical resistivity has been increased after PS layer formed and changed with the variation of the pore size and it was much higher after ZnS deposited on the PS. However, use of ZnS:Cu/PS photodetector showed much higher output current at the ultraviolet (UV) region compared to ZnS/PS. The ZnS:Cu/PS photodetector showed higher output current value than that of the ZnS/PS leading to improvement in the quantum efficiency of 42%.

Influence of Passivation Layers for Metal Grating-Based Quantum Well Infrared Photodetectors

NASA Astrophysics Data System (ADS)

Liu, Dong; Fu, Yong-Qi; Yang, Le-Chen; Zhang, Bao-Shun; Li, Hai-Jun; Fu, Kai; Xiong, Min

2012-06-01

To improve absorption of quantum well infrared photodetectors (QWIPs), a coupling layer with metallic grating is designed and fabricated above the quantum well. The metal grating is composed of 100 nm Au film on top, and a 20-nm Ti thin layer between the Au film and the sapphire substrate is coated as an adhesion/buffer layer. To protect the photodetector from oxidation and to decrease leakage, a SiO2 film is deposited by means of plasma-enhanced chemical vapor deposition. A value of about 800 nm is an optimized thickness for the SiO2 applied in the metallic grating-based mid-infrared QWIP. In addition, a QWIP passivation layer is studied experimentally. The results demonstrate that the contribution from the layer is positive for metal grating coupling with the quantum well. The closer the permittivity of the two dielectric layers (SiO2 and the passivation layers), and the closer the two transmission peaks, the greater the QWIP enhancement will be.

Effect of Stretching on Ultraviolet Protection of Cotton and Cotton/Coolmax Blended Weft Knitted Fabric in a Wet State

PubMed Central

Kan, Chi-wai; Yam, Lim-yung; Ng, Sun-pui

2014-01-01

In this paper, the ultraviolet protection factor (UPF) of plain knitted fabrics made from 20Ne cotton yarns, Coolmax yarn and their combinations in wet, relaxed and stretched states were studied. According to the fiber composition, fabric samples are divided into three groups including Group I (single cotton yarn), Group II (cotton/cotton combination) and Group III (Coolmax/cotton combination) for discussion. In order to study the effect of wet condition on the UPF of different plain knitted fabrics, five wetting solutions, namely: (i) chlorinated pool water; (ii) sea water, (iii) acidic perspiration; (iv) alkaline perspiration and (v) deionized water (DI water) were prepared and the fabrics were wetted with different percentages of 50%, 75% and 100%. The UPF of the plain knitted fabrics in wet, relaxed and stretched states was measured and the results were discussed. In addition, yarn and fabric properties such as yarn tenacity, yarn strength, fiber combination and water vapor transmission, which affect the corresponding UPF values, were used for generating a prediction model in order to determine UPF. Verification of the prediction model was also conducted. PMID:28788440

Ultrasensitive near-infrared photodetectors based on graphene-MoTe2-graphene vertical van der Waals heterostructure

NASA Astrophysics Data System (ADS)

Zhang, Kun; Ye, Yu; Dai, Lun; School of Physics, Peking University Team

Two-dimensional (2D) materials have rapidly established themselves as exceptional building blocks for optoelectronic applications, due to their unique properties and atomically thin nature. Nevertheless, near-infrared (NIR) photodetectors based on layered 2D semiconductors are rarely realized. In this work, we fabricate graphene-MoTe2-graphene vertical vdWs heterostructure by a facile and reliable site controllable transfer method, and apply it for photodetection from visible to the NIR wavelength range. Compared to the 2D semiconductor based photodetectors reported thus far, the graphene-MoTe2-graphene photodetector has superior performance, including high photoresponsivity (110 mA W-1 at 1064 nm and 205 mA W-1 at 473 nm), high external quantum efficiency (EQE, 12.9% at 1064 nm and 53.8% at 473 nm), rapid response and recovery processes (rise time of 24 μs, fall time of 46 μs under 1064 nm illumination), and free from an external source-drain power supply. The all-2D-materials heterostructure has promising applications in future novel high responsivity, high speed and flexible NIR devices.

Photocurrent enhancement of graphene photodetectors by photon tunneling of light into surface plasmons

NASA Astrophysics Data System (ADS)

Maleki, Alireza; Cumming, Benjamin P.; Gu, Min; Downes, James E.; Coutts, David W.; Dawes, Judith M.

2017-10-01

We demonstrate that surface plasmon resonances excited by photon tunneling through an adjacent dielectric medium enhance the photocurrent detected by a graphene photodetector. The device is created by overlaying a graphene sheet over an etched gap in a gold film deposited on glass. The detected photocurrents are compared for five different excitation wavelengths, ranging from {λ }0=570 {{nm}} to {λ }0=730 {{nm}}. Although the device is not optimized, the photocurrent excited with incident p-polarized light (which excites resonant surface plasmons) is significantly amplified in comparison with that for s-polarized light (without surface plasmon resonances). We observe that the photocurrent is greater for shorter wavelengths (for both s- and p-polarizations) with increased photothermal current. Position-dependent Raman spectroscopic analysis of the optically-excited graphene photodetector indicates the presence of charge carriers in the graphene near the metallic edge. In addition, we show that the polarity of the photocurrent reverses across the gap as the incident light spot moves across the gap. Graphene-based photodetectors offer a simple architecture which can be fabricated on dielectric waveguides to exploit the plasmonic photocurrent enhancement of the evanescent field. Applications for these devices include photodetection, optical sensing and direct plasmonic detection.

Room-temperature InP/InAsP Quantum Discs-in-Nanowire Infrared Photodetectors.

PubMed

Karimi, Mohammad; Jain, Vishal; Heurlin, Magnus; Nowzari, Ali; Hussain, Laiq; Lindgren, David; Stehr, Jan Eric; Buyanova, Irina A; Gustafsson, Anders; Samuelson, Lars; Borgström, Magnus T; Pettersson, Håkan

2017-06-14

The possibility to engineer nanowire heterostructures with large bandgap variations is particularly interesting for technologically important broadband photodetector applications. Here we report on a combined study of design, fabrication, and optoelectronic properties of infrared photodetectors comprising four million n + -i-n + InP nanowires periodically ordered in arrays. The nanowires were grown by metal-organic vapor phase epitaxy on InP substrates, with either a single or 20 InAsP quantum discs embedded in the i-segment. By Zn compensation of the residual n-dopants in the i-segment, the room-temperature dark current is strongly suppressed to a level of pA/NW at 1 V bias. The low dark current is manifested in the spectrally resolved photocurrent measurements, which reveal strong photocurrent contributions from the InAsP quantum discs at room temperature with a threshold wavelength of about 2.0 μm and a bias-tunable responsivity reaching 7 A/W@1.38 μm at 2 V bias. Two different processing schemes were implemented to study the effects of radial self-gating in the nanowires induced by the nanowire/SiO x /ITO wrap-gate geometry. Summarized, our results show that properly designed axial InP/InAsP nanowire heterostructures are promising candidates for broadband photodetectors.

All-inkjet-printed flexible ZnO micro photodetector for a wearable UV monitoring device.

PubMed

Tran, Van-Thai; Wei, Yuefan; Yang, Hongyi; Zhan, Zhaoyao; Du, Hejun

2017-03-03

Fabrication of small-sized patterns of inorganic semiconductor onto flexible substrates is a major concern when manufacturing wearable devices for measuring either biometric or environmental parameters. In this study, micro-sized flexible ZnO UV photodetectors have been thoroughly prepared by a facile inkjet printing technology and followed with heat treatments. A simple ink recipe of zinc acetate precursor solution was investigated. It is found that the substrate temperature during zinc precursor ink depositing has significant effects on ZnO pattern shape, film morphology, and crystallization. The device fabricated from the additive manufacturing approach has good bendability, Ohmic contact, short response time as low as 0.3 s, and high on/off ratio of 3525. We observed the sensor's dependence of response/decay time by the illuminating UV light intensity. The whole process is based on additive manufacturing which has many benefits such as rapid prototyping, saving material, being environmentally friendly, and being capable of creating high-resolution patterns. In addition, this method can be applied to flexible substrates, which makes the device more applicable for applications requiring flexibility such as wearable devices. The proposed all-inkjet-printing approach for a micro-sized ZnO UV photodetector would significantly simplify the fabrication process of micro-sized inorganic semiconductor-based devices. A potential application is real-time monitoring of UV light exposure to warn users about unsafe direct sunlight to implement suitable avoidance solutions.

All-inkjet-printed flexible ZnO micro photodetector for a wearable UV monitoring device

NASA Astrophysics Data System (ADS)

Tran, Van-Thai; Wei, Yuefan; Yang, Hongyi; Zhan, Zhaoyao; Du, Hejun

2017-03-01

Fabrication of small-sized patterns of inorganic semiconductor onto flexible substrates is a major concern when manufacturing wearable devices for measuring either biometric or environmental parameters. In this study, micro-sized flexible ZnO UV photodetectors have been thoroughly prepared by a facile inkjet printing technology and followed with heat treatments. A simple ink recipe of zinc acetate precursor solution was investigated. It is found that the substrate temperature during zinc precursor ink depositing has significant effects on ZnO pattern shape, film morphology, and crystallization. The device fabricated from the additive manufacturing approach has good bendability, Ohmic contact, short response time as low as 0.3 s, and high on/off ratio of 3525. We observed the sensor’s dependence of response/decay time by the illuminating UV light intensity. The whole process is based on additive manufacturing which has many benefits such as rapid prototyping, saving material, being environmentally friendly, and being capable of creating high-resolution patterns. In addition, this method can be applied to flexible substrates, which makes the device more applicable for applications requiring flexibility such as wearable devices. The proposed all-inkjet-printing approach for a micro-sized ZnO UV photodetector would significantly simplify the fabrication process of micro-sized inorganic semiconductor-based devices. A potential application is real-time monitoring of UV light exposure to warn users about unsafe direct sunlight to implement suitable avoidance solutions.

Emerging terahertz photodetectors based on two-dimensional materials

NASA Astrophysics Data System (ADS)

Yang, Jie; Qin, Hua; Zhang, Kai

2018-01-01

Inspired by the innovations in photonics and nanotechnology, the remarkable properties of two-dimensional (2D) materials have renewed interest for the development of terahertz (THz) photodetectors. The versatility of these materials enables ultrafast and ultrasensitive photodetection of THz radiation at room temperature. The atomically thin characteristic together with van der Waals interactions among the layers make it easy to scaling down and integrate with other 2D materials based devices, as well as silicon chips. Efforts have increased fast in the past decade in developing proof-of-concept and the further prospective THz photodetectors based on 2D materials. Here, the recent progress on the exploring of THz photodetectors based on 2D materials is reviewed. We summarized the THz photodetectors under different physical mechanism and introduced the state-of-the-art THz photodetectors based on various promising 2D materials, such as graphene, transition metal dichalcogenides (TMDCs), black phosphorus (BP) and topological insulators (TIs). A brief discussion on the remaining challenges and a perspective of the 2D materials based THz photodetectors are also given.

Binary CMOS image sensor with a gate/body-tied MOSFET-type photodetector for high-speed operation

NASA Astrophysics Data System (ADS)

Choi, Byoung-Soo; Jo, Sung-Hyun; Bae, Myunghan; Kim, Sang-Hwan; Shin, Jang-Kyoo

2016-05-01

In this paper, a binary complementary metal oxide semiconductor (CMOS) image sensor with a gate/body-tied (GBT) metal oxide semiconductor field effect transistor (MOSFET)-type photodetector is presented. The sensitivity of the GBT MOSFET-type photodetector, which was fabricated using the standard CMOS 0.35-μm process, is higher than the sensitivity of the p-n junction photodiode, because the output signal of the photodetector is amplified by the MOSFET. A binary image sensor becomes more efficient when using this photodetector. Lower power consumptions and higher speeds of operation are possible, compared to the conventional image sensors using multi-bit analog to digital converters (ADCs). The frame rate of the proposed image sensor is over 2000 frames per second, which is higher than those of the conventional CMOS image sensors. The output signal of an active pixel sensor is applied to a comparator and compared with a reference level. The 1-bit output data of the binary process is determined by this level. To obtain a video signal, the 1-bit output data is stored in the memory and is read out by horizontal scanning. The proposed chip is composed of a GBT pixel array (144 × 100), binary-process circuit, vertical scanner, horizontal scanner, and readout circuit. The operation mode can be selected from between binary mode and multi-bit mode.

A CWDM photoreceiver module for 10 Gb/s x 4ch interconnection based on a vertical-illumination-type Ge-on-Si photodetectors and a silica-based AWG

NASA Astrophysics Data System (ADS)

Jang, Ki-Seok; Joo, Jiho; Kim, Taeyong; Kim, Sanghoon; Oh, Jin Hyuk; Kim, In Gyoo; Kim, Sun Ae; Kim, Gyungock

2015-03-01

We report a 40 Gb/s photoreceiver based on vertical-illumination type Ge-on-Si photodetectors and a silica-based AWG demultiplexer by employing 4-channel CWDM. The 60um-diameter Ge-on-Si photodetector arrays, grown on a bulk silicon wafer by RPCVD and fabricated with CMOS-compatible process, have ~0.9 A/W responsivity with 13 GHz bandwidth at λ ~ 1330nm. Ge-on-Si photodetector arrays are hybrid-integrated with TIA/LAs and directly-coupled to the AWG. The low-cost FPCB-package based photoreceiver module shows 10.3 Gb/s × 4-channel interconnection with -11 ~ -12.2 dBm sensitivity at a BER = 10-12.

The Effect of Stretching on Ultraviolet Protection of Cotton and Cotton/Coolmax-Blended Weft Knitted Fabric in a Dry State

PubMed Central

Kan, Chi-wai; Yam, Lim-yung; Ng, Sun-pui

2013-01-01

In this paper, the ultraviolet protection factor (UPF) of weft knitted fabrics made from 20Ne cotton yarn, Coolmax yarn and their blends in dry, relaxed and stretched states were studied. According to the fibre composition, samples were divided into three groups: Group I (single cotton yarn); Group II (cotton/cotton combination); and Group III (Coolmax/cotton combination) for discussion. In addition, yarn and fabric properties such as yarn tenacity, yarn strength, fibre combination and water vapour transmission that affect the corresponding UPF values are used for formulating a prediction model in order to determine UPF. Generally speaking, when samples are measured under stretched conditions in a dry state, they exhibit a remarkable reduction in ultraviolet protective power, as pores are opened up and UV radiation can easily penetrate through these pores. In addition, greater stretch percentage came along with greater reduction in UPF. This can be explained by the fact that the amount and the size of pores increase when samples are subjected to greater tension. PMID:28788371

High-speed photodetectors in optical communication system

NASA Astrophysics Data System (ADS)

Zhao, Zeping; Liu, Jianguo; Liu, Yu; Zhu, Ninghua

2017-12-01

This paper presents a review and discussion for high-speed photodetectors and their applications on optical communications and microwave photonics. A detailed and comprehensive demonstration of high-speed photodetectors from development history, research hotspots to packaging technologies is provided to the best of our knowledge. A few typical applications based on photodetectors are also illustrated, such as free-space optical communications, radio over fiber and millimeter terahertz signal generation systems. Project supported by the Preeminence Youth Fund of China (No. 61625504).

New advances in protection against solar ultraviolet radiation in textiles for summer clothing.

PubMed

Aguilera, José; de Gálvez, María Victoria; Sánchez-Roldán, Cristina; Herrera-Ceballos, Enrique

2014-01-01

Clothing is considered one of the most important tools for photoprotection against harmful solar ultraviolet radiation (UVR). The standard for sun-protective clothing is based on erythema despite other biological effects of UVR on the skin. We analyzed the potential protection against UVR in fabrics destined for summer clothing based on several action spectra. We examined 50 garments classified by type of fabric composition, structure of the fiber yarn and color. The ultraviolet protection factor was calculated based on fabric ultraviolet transmittance corrected for erythema according to the EU standard E-13758 as well as the UVA transmittance of fabrics. UVR protection was also analyzed in base of different action spectra as for previtamin D3, nonmelanoma skin cancer, photoimmunosuppression and photoaging. Most knitted fabrics used for sports T-shirts offered excellent ratings for ultraviolet protection while normal shirts showed very low ratings, particularly against photoaging. The cover is the most influential variable in fabric photoprotection, having an exponential relationship with the UPF. The relation between cover and UVA protection was linearly negative. Information about ultraviolet protection in textiles used for summer clothing should be included in labeling as some types of fabrics, especially those used for shirts, offer very low UVR protection. © 2014 The American Society of Photobiology.

Mask fabrication and its applications to extreme ultra-violet diffractive optics

NASA Astrophysics Data System (ADS)

Cheng, Yang-Chun

Short-wavelength radiation around 13nm of wavelength (Extreme Ultra-Violet, EUV) is being considered for patterning microcircuits, and other electronic chips with dimensions in the nanometer range. Interferometric Lithography (IL) uses two beams of radiation to form high-resolution interference fringes, as small as half the wavelength of the radiation used. As a preliminary step toward manufacturing technology, IL can be used to study the imaging properties of materials in a wide spectral range and at nanoscale dimensions. A simple implementation of IL uses two transmission diffraction gratings to form the interference pattern. More complex interference patterns can be created by using different types of transmission gratings. In this thesis, I describe the development of a EUV lithography system that uses diffractive optical elements (DOEs), from simple gratings to holographic structures. The exposure system is setup on a EUV undulator beamline at the Synchrotron Radiation Center, in the Center for NanoTechnology clean room. The setup of the EUV exposure system is relatively simple, while the design and fabrication of the DOE "mask" is complex, and relies on advanced nanofabrication techniques. The EUV interferometric lithography provides reliable EUV exposures of line/space patterns and is ideal for the development of EUV resist technology. In this thesis I explore the fabrication of these DOE for the EUV range, and discuss the processes I have developed for the fabrication of ultra-thin membranes. In addition, I discuss EUV holographic lithography and generalized Talbot imaging techniques to extend the capability of our EUV-IL system to pattern arbitrary shapes, using more coherent sources than the undulator. In a series of experiments, we have demonstrated the use of a soft X-ray (EUV) laser as effective source for EUV lithography. EUV-IL, as implemented at CNTech, is being used by several companies and research organizations to characterize photoresist

High time-resolution photodetectors for PET applications

DOE PAGES

Ronzhin, Anatoly

2016-02-01

This paper describes recent developments aiming at the improvement of the time resolution of photodetectors used in positron emission tomography (PET). Promising photodetector candidates for future PET-time-of-flight (TOF) applications are also discussed.

Graphene/black phosphorus heterostructured photodetector

NASA Astrophysics Data System (ADS)

Xu, Jiao; Song, Young Jae; Park, Jin-Hong; Lee, Sungjoo

2018-06-01

Graphene photodetectors exhibit a low photoresponsivity due to their weak light absorbance. In this study, we fabricated a graphene/black phosphorus (BP) heterostructure, in which the multilayer BP flake with a ∼0.3 eV direct band gap functions as an enhanced light-absorption material. Further, the photoexcited electrons are trapped in the trap states of the BP, which creates a photogating effect and causes holes to flow into the graphene layer driven by the built-in potential between BP and graphene. The photocarrier lifetime is therefore prolonged by trapping, and as a result of the high carrier mobility of graphene, the holes that transfer into the graphene channel can travel through the circuit before they recombine with trapped electrons. These combined effects result in a high photoresponsivity: 55.75 A/W at λ = 655 nm, 1.82 A/W at λ = 785 nm, and 0.66 A/W at λ = 980 nm.

Design and fabrication of far ultraviolet filters based on π-multilayer technology in high-k materials

PubMed Central

Wang, Xiao-Dong; Chen, Bo; Wang, Hai-Feng; He, Fei; Zheng, Xin; He, Ling-Ping; Chen, Bin; Liu, Shi-Jie; Cui, Zhong-Xu; Yang, Xiao-Hu; Li, Yun-Peng

2015-01-01

Application of π-multilayer technology is extended to high extinction coefficient materials, which is introduced into metal-dielectric filter design. Metal materials often have high extinction coefficients in far ultraviolet (FUV) region, so optical thickness of metal materials should be smaller than that of the dielectric material. A broadband FUV filter of 9-layer non-periodic Al/MgF2 multilayer was successfully designed and fabricated and it shows high reflectance in 140–180 nm, suppressed reflectance in 120–137 nm and 181–220 nm. PMID:25687255

Digital Alloy Absorber for Photodetectors

NASA Technical Reports Server (NTRS)

Hill, Cory J. (Inventor); Ting, David Z. (Inventor); Gunapala, Sarath D. (Inventor)

2016-01-01

In order to increase the spectral response range and improve the mobility of the photo-generated carriers (e.g. in an nBn photodetector), a digital alloy absorber may be employed by embedding one (or fraction thereof) to several monolayers of a semiconductor material (insert layers) periodically into a different host semiconductor material of the absorber layer. The semiconductor material of the insert layer and the host semiconductor materials may have lattice constants that are substantially mismatched. For example, this may performed by periodically embedding monolayers of InSb into an InAsSb host as the absorption region to extend the cutoff wavelength of InAsSb photodetectors, such as InAsSb based nBn devices. The described technique allows for simultaneous control of alloy composition and net strain, which are both key parameters for the photodetector operation.

Universal liquid-phase laser fabrication of various nano-metals encapsulated by ultrathin carbon shells for deep-UV plasmonics.

PubMed

Yu, Miao; Yang, Chao; Li, Xiao-Ming; Lei, Tian-Yu; Sun, Hao-Xuan; Dai, Li-Ping; Gu, Yu; Ning, Xue; Zhou, Ting; Wang, Chao; Zeng, Hai-Bo; Xiong, Jie

2017-06-29

The exploration of localized surface plasmon resonance (LSPR) beyond the usual visible waveband, for example within the ultraviolet (UV) or deep-ultraviolet (D-UV) regions, is of great significance due to its unique applications in secret communications and optics. However, it is still challenging to universally synthesize the corresponding metal nanostructures due to their high activity. Herein, we report a universal, eco-friendly, facile and rapid synthesis of various nano-metals encapsulated by ultrathin carbon shells, significantly with a remarkable deep-UV LSPR characteristic, via a liquid-phase laser fabrication method. Firstly, a new generation of the laser ablation in liquid (LAL) method has been developed with an emphasis on the elaborate selection of solvents to generate ultrathin carbon shells, and hence to stabilize the formed metal nanocrystals. As a result, a series of metal@carbon nanoparticles (NPs), including Cr@C, Ti@C, Fe@C, V@C, Al@C, Sn@C, Mn@C and Pd@C, can be fabricated by this modified LAL method. Interestingly, these NPs exhibit LSPR peaks in the range of 200-330 nm, which are very rare for localized surface plasmon resonance. Consequently, the UV plasmonic effects of these metal@carbon NPs were demonstrated both by the observed enhancement in UV photoluminescence (PL) from the carbon nanoshells and by the improvement of the photo-responsivity of UV GaN photodetectors. This work could provide a universal method for carbon shelled metal NPs and expand plasmonics into the D-UV waveband.

Vertical Ge photodetector base on InP taper waveguide

NASA Astrophysics Data System (ADS)

Amiri, Iraj Sadegh; Ariannejad, M. M.; Azzuhri, S. R. B.; Anwar, T.; Kouhdaragh, V.; Yupapin, P.

2018-06-01

In this work, simulation is conducted to investigate Ge photodetectors monolithically integrated on Si chip. The performance of vertical Germanium photodetector with FDTD Solutions (optical simulation) and electrical simulation has been studied. Selective heteroepitaxy of Ge is functioned in the monolithic integration of Ge photodetectors. The potential of CMOS-compatible monolithic integration of Ge as photodetector is investigated and the performance optimization is presented. Additionally, the investigation is extended to electrical part, particularly in the conversion efficiency as well as operation under low supplied voltage condition.

Zero-Power-Consumption Solar-Blind Photodetector Based on β-Ga2O3/NSTO Heterojunction.

PubMed

Guo, Daoyou; Liu, Han; Li, Peigang; Wu, Zhenping; Wang, Shunli; Cui, Can; Li, Chaorong; Tang, Weihua

2017-01-18

A solar-blind photodetector based on β-Ga 2 O 3 /NSTO (NSTO = Nb:SrTiO 3 ) heterojunctions were fabricated for the first time, and its photoelectric properties were investigated. The device presents a typical positive rectification in the dark, while under 254 nm UV light illumination, it shows a negative rectification, which might be caused by the generation of photoinduced electron-hole pairs in the β-Ga 2 O 3 film layer. With zero bias, that is, zero power consumption, the photodetector shows a fast photoresponse time (decay time τ d = 0.07 s) and the ratio I photo /I dark ≈ 20 under 254 nm light illumination with a light intensity of 45 μW/cm 2 . Such behaviors are attributed to the separation of photogenerated electron-hole pairs driven by the built-in electric field in the depletion region of β-Ga 2 O 3 and the NSTO interface, and the subsequent transport toward corresponding electrodes. The photocurrent increases linearly with increasing the light intensity and applied bias, while the response time decreases with the increase of the light intensity. Under -10 V bias and 45 μW/cm 2 of 254 nm light illumination, the photodetector exhibits a responsivity R λ of 43.31 A/W and an external quantum efficiency of 2.1 × 10 4 %. The photo-to-electric conversion mechanism in the β-Ga 2 O 3 /NSTO heterojunction photodetector is explained in detail by energy band diagrams. The results strongly suggest that a photodetector based on β-Ga 2 O 3 thin-film heterojunction structure can be practically used to detect weak solar-blind signals because of its high photoconductive gain.

SiC-based Photo-detectors for UV, VUV, EUV and Soft X-ray Detection

NASA Technical Reports Server (NTRS)

Yan, Feng

2006-01-01

A viewgraph presentation describing an ideal Silicon Carbide detector for ultraviolet, vacuum ultraviolet, extreme ultraviolet and soft x-ray detection is shown. The topics include: 1) An ideal photo-detector; 2) Dark current density of SiC photodiodes at room temperature; 3) Dark current in SiC detectors; 4) Resistive and capacitive feedback trans-impedance amplifier; 5) Avalanche gain; 6) Excess noise; 7) SNR in single photon counting mode; 8) Structure of SiC single photon counting APD and testing structure; 9) Single photon counting waveform and testing circuit; 10) Amplitude of SiC single photon counter; 11) Dark count of SiC APD photon counters; 12) Temperature-dependence of dark count rate; 13) Reduce the dark count rate by reducing the breakdown electric field; 14) Spectrum range for SiC detectors; 15) QE curves of Pt/4H-SiC photodiodes; 16) QE curve of SiC; 17) QE curves of SiC photodiode vs. penetration depth; 18) Visible rejection of SiC photodiodes; 19) Advantages of SiC photodiodes; 20) Competitors of SiC detectors; 21) Extraterrestrial solar spectra; 22) Visible-blind EUV detection; 23) Terrestrial solar spectra; and 24) Less than 1KeV soft x-ray detection.

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, J.; Piotrowski, A.

2006-03-01

The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, Jozef; Piotrowski, Adam

2005-09-01

The history and present status of the middle and long wavelength Hg1xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapor phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapor phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. Actually, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Quantum well infrared photodetector simultaneously working in the two atmospheric windows

NASA Astrophysics Data System (ADS)

Huo, Y. H.; Ma, W. Q.; Zhang, Y. H.; Chong, M.; Yang, T.; Chen, L. H.; Shi, Y. L.

2009-07-01

We have demonstrated a dual-band quantum well infrared photodetector (QWIP) exhibiting simultaneous photoresponse both in the mid and the long wavelength atmospheric windows of 3-5 μm and of 8-12 μm, but the device only has two ohmic contacts. The structure of the device was achieved by sequentially growing a mid wavelength part (MWQWIP) followed by a long wavelength part (LWQWIP) separated by an n+ layer. Comparing with the conventional dual-band QWIP device utilizing three ohmic contacts, our QWIP is promising to greatly facilitate the two-color focal plane array (FPA) fabrication by reducing the number of the indium bump per pixel from three to one just like a monochromatic FPA fabrication; another advantage may be that this QWIP FAP boasts two-color detection capability while only using a monochromatic readout integrated circuit.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits.

PubMed

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe 2 , a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

A MoTe2-based light-emitting diode and photodetector for silicon photonic integrated circuits

NASA Astrophysics Data System (ADS)

Bie, Ya-Qing; Grosso, Gabriele; Heuck, Mikkel; Furchi, Marco M.; Cao, Yuan; Zheng, Jiabao; Bunandar, Darius; Navarro-Moratalla, Efren; Zhou, Lin; Efetov, Dmitri K.; Taniguchi, Takashi; Watanabe, Kenji; Kong, Jing; Englund, Dirk; Jarillo-Herrero, Pablo

2017-12-01

One of the current challenges in photonics is developing high-speed, power-efficient, chip-integrated optical communications devices to address the interconnects bottleneck in high-speed computing systems. Silicon photonics has emerged as a leading architecture, in part because of the promise that many components, such as waveguides, couplers, interferometers and modulators, could be directly integrated on silicon-based processors. However, light sources and photodetectors present ongoing challenges. Common approaches for light sources include one or few off-chip or wafer-bonded lasers based on III-V materials, but recent system architecture studies show advantages for the use of many directly modulated light sources positioned at the transmitter location. The most advanced photodetectors in the silicon photonic process are based on germanium, but this requires additional germanium growth, which increases the system cost. The emerging two-dimensional transition-metal dichalcogenides (TMDs) offer a path for optical interconnect components that can be integrated with silicon photonics and complementary metal-oxide-semiconductors (CMOS) processing by back-end-of-the-line steps. Here, we demonstrate a silicon waveguide-integrated light source and photodetector based on a p-n junction of bilayer MoTe2, a TMD semiconductor with an infrared bandgap. This state-of-the-art fabrication technology provides new opportunities for integrated optoelectronic systems.

Persistent photoconductivity due to trapping of induced charges in Sn/ZnO thin film based UV photodetector

NASA Astrophysics Data System (ADS)

Yadav, Harish Kumar; Sreenivas, K.; Gupta, Vinay

2010-05-01

Photoconductivity relaxation in rf magnetron sputtered ZnO thin films integrated with ultrathin tin metal overlayer is investigated. Charge carriers induced at the ZnO-metal interface by the tin metal overlayer compensates the surface lying trap centers and leads to the enhanced photoresponse. On termination of ultraviolet radiation, recombination of the photoexcited electrons with the valence band holes leaves the excess carriers deeply trapped at the recombination center and holds the dark conductivity level at a higher value. Equilibrium between the recombination centers and valence band, due to trapped charges, eventually stimulates the persistent photoconductivity in the Sn/ZnO photodetectors.

Tunable absorption resonances in the ultraviolet for InP nanowire arrays.

PubMed

Aghaeipour, Mahtab; Anttu, Nicklas; Nylund, Gustav; Samuelson, Lars; Lehmann, Sebastian; Pistol, Mats-Erik

2014-11-17

The ability to tune the photon absorptance spectrum is an attracting way of tailoring the response of devices like photodetectors and solar cells. Here, we measure the reflectance spectra of InP substrates patterned with arrays of vertically standing InP nanowires. Using the reflectance spectra, we calculate and analyze the corresponding absorptance spectra of the nanowires. We show that we can tune absorption resonances for the nanowire arrays into the ultraviolet by decreasing the diameter of the nanowires. When we compare our measurements with electromagnetic modeling, we generally find good agreement. Interestingly, the remaining differences between modeled and measured spectra are attributed to a crystal-phase dependence in the refractive index of InP. Specifically, we find indication of significant differences in the refractive index between the modeled zinc-blende InP nanowires and the measured wurtzite InP nanowires in the ultraviolet. We believe that such crystal-phase dependent differences in the refractive index affect the possibility to excite optical resonances in the large wavelength range of 345 < λ < 390 nm. To support this claim, we investigated how resonances in nanostructures can be shifted in wavelength by geometrical tuning. We find that dispersion in the refractive index can dominate over geometrical tuning and stop the possibility for such shifting. Our results open the door for using crystal-phase engineering to optimize the absorption in InP nanowire-based solar cells and photodetectors.

Self-consistent performance modeling for dual band MIS UV photodetectors based on Si/SiO2 multilayer structure.

PubMed

Rostami, A; Leilaeioun, M; Golmmohamadi, S; Rasooli Saghai, H

2012-06-01

In this paper, we present a self-consistent theoretical model for a metal-insulator semiconductor (MIS) dual band ultraviolet (UV) photodetector with a modified structure implying an arbitrarily defined insulating potential barrier as its active region. Utilizing our proposed model, the dark and photocurrent density-voltage (J-V) characteristics of MIS UV photodetectors with multi-quantum wells of silicon (MQWs) are calculated. We demonstrate that dark current is reduced in the suggested structure, because the electron-tunneling probability becomes unity at energies coincident with the peak detection wavelength. This is due to the resonant tunneling and decreases at energies that are significantly smaller than this optimum value. In consequence, the number of carriers contributing to the dark current, which have a broad energy distribution at high temperatures, will decrease. It is also shown that the designed structure could detect two individual UV wavelengths, simultaneously. The width of each Si quantum well has been considered at around 1.2 nm, in order to observe these two absorption peaks in the middle and near UV regions of photon spectrum (about 365 nm, 175 nm).

Mid- and Long-IR Broadband Quantum Well Photodetector

NASA Technical Reports Server (NTRS)

Soibel, Alexander; Ting, David Z.; Khoshakhlagh, Arezou; Gunapala, Sarath D.

2012-01-01

A single-stack broadband quantum well infrared photodetector (QWIP) has been developed that consists of stacked layers of GaAs/AlGaAs quantum wells with absorption peaks centered at various wavelengths spanning across the 9- to-11- m spectral regions. The correct design of broadband QWIPs was a critical step in this task because the earlier implementation of broadband QWIPs suffered from a tuning of spectral response curve with an applied bias. Here, a new QWIP design has been developed to overcome the spectral tuning with voltage that results from non-uniformity and bias variation of the electrical field across the detector stacks with different absorption wavelengths. In this design, a special effort has been made to avoid non-uniformity and bias tuning by changing the doping levels in detector stacks to compensate for variation of dark current generation rate across the stacks with different absorption wavelengths. Single-pixel photodetectors were grown, fabricated, and tested using this new design. The measured dark current is comparable with the dark measured current for single-color QWIP detectors with similar cutoff wavelength, thus indicating high material quality as well as absence of performance degradation resulting from broadband design. The measured spectra clearly demonstrate that the developed detectors cover the desired special range of 8 to 12 m. Moreover, the shape of the spectral curves does not change with applied biases, thus overcoming the problem plaguing previous designs of broadband QWIPs.

High-performance polymer photovoltaic cells and photodetectors

NASA Astrophysics Data System (ADS)

Yu, Gang; Srdanov, Gordana; Wang, Hailiang; Cao, Yong; Heeger, Alan J.

2001-02-01

Polymer photovoltaic cells and photodetectors have passed their infancy and become mature technologies. The energy conversion efficiency of polymer photovoltaic cells have been improved to over 4.1% (500 nm, 10 mW/cm2). Such high efficiency polymer photovoltaic cells are promising for many applications including e-papers, e-books and smart- windows. The development of polymer photodetectors is even faster. The performance parameters have been improved to the level meeting all specifications for practical applications. The polymer photodetectors are of high photosensitivity (approximately 0.2 - 0.3 A/Watt in visible and UV), low dark current (0.1 - 1 nA/cm2), large dynamic range (> 8 orders of magnitude), linear intensity dependence, low noise level and fast response time (to nanosecond time domain). These devices show long shelf and operation lives. The advantages of low manufacturing cost, large detection area, and easy hybridization and integration with other electronic or optical components make the polymer photodetectors promising for a variety of applications including chemical/biomedical analysis, full-color digital image sensing and high energy radiation detection.

Metal-Halide Perovskites for Gate Dielectrics in Field-Effect Transistors and Photodetectors Enabled by PMMA Lift-Off Process.

PubMed

Daus, Alwin; Roldán-Carmona, Cristina; Domanski, Konrad; Knobelspies, Stefan; Cantarella, Giuseppe; Vogt, Christian; Grätzel, Michael; Nazeeruddin, Mohammad Khaja; Tröster, Gerhard

2018-06-01

Metal-halide perovskites have emerged as promising materials for optoelectronics applications, such as photovoltaics, light-emitting diodes, and photodetectors due to their excellent photoconversion efficiencies. However, their instability in aqueous solutions and most organic solvents has complicated their micropatterning procedures, which are needed for dense device integration, for example, in displays or cameras. In this work, a lift-off process based on poly(methyl methacrylate) and deep ultraviolet lithography on flexible plastic foils is presented. This technique comprises simultaneous patterning of the metal-halide perovskite with a top electrode, which results in microscale vertical device architectures with high spatial resolution and alignment properties. Hence, thin-film transistors (TFTs) with methyl-ammonium lead iodide (MAPbI 3 ) gate dielectrics are demonstrated for the first time. The giant dielectric constant of MAPbI 3 (>1000) leads to excellent low-voltage TFT switching capabilities with subthreshold swings ≈80 mV decade -1 over ≈5 orders of drain current magnitude. Furthermore, vertically stacked low-power Au-MAPbI 3 -Au photodetectors with close-to-ideal linear response (R 2 = 0.9997) are created. The mechanical stability down to a tensile radius of 6 mm is demonstrated for the TFTs and photodetectors, simultaneously realized on the same flexible plastic substrate. These results open the way for flexible low-power integrated (opto-)electronic systems based on metal-halide perovskites. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Selective p-i-n photodetector with resonant tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mil'shtein, S.; Wilson, S.; Pillai, A.

2014-05-15

There are different fundamental approaches to designing selective photodetectors, where the selectivity of optical spectra is produced by a filtering aperture. However, manufacturing of multilayered filters is cumbersome for epitaxial technology. In the current study, we offer a novel approach in design of selective photodetectors. A p-i-n photodetector with superlattices in top n-layer becomes transparent for photons where hν<>E{sub ng}+E{sub n1}, the light will be absorbed, simultaneously producing high energy (hot) electrons. The designed thickness of the structure does prevent thermal relaxation of high energy electrons by thus enhancing the selectivity of the photodetector. However the most important selectivity elementmore » is the resonant tunneling which does happen only for electrons occupying E{sub n1} energy levels as they transfer to levels E{sub i1}aligned under reverse biasing.« less

High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

DOE PAGES

Xia, Zhenyang; Zang, Kai; Liu, Dong; ...

2017-08-21

Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less

High-sensitivity silicon ultraviolet p+-i-n avalanche photodiode using ultra-shallow boron gradient doping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xia, Zhenyang; Zang, Kai; Liu, Dong

Photo detection of ultraviolet (UV) light remains a challenge since the penetration depth of UV light is limited to the nanometer scale. Therefore, the doping profile and electric field in the top nanometer range of the photo detection devices become critical. Traditional UV photodetectors usually use a constant doping profile near the semiconductor surface, resulting in a negligible electric field, which limits the photo-generated carrier collection efficiency of the photodetector. Here, we demonstrate, via the use of an optimized gradient boron doping technique, that the carrier collection efficiency and photo responsivity under the UV wavelength region have been enhanced. Moreover,more » the ultrathin p+-i-n junction shows an avalanche gain of 2800 and an ultra-low junction capacitance (sub pico-farad), indicating potential applications in the low timing jitter single photon detection area.« less

Preparation of low cost n-ZnO/MgO/p-Si heterojunction photodetector by laser ablation in liquid and spray pyrolysis

NASA Astrophysics Data System (ADS)

Ismail, Raid A.; Khashan, Khawla S.; Jawad, Muslim F.; Mousa, Ali M.; Mahdi, Farah

2018-05-01

In this study, low cost ZnO/Si and ZnO/MgO/Si heterojunction (HJ) photodetectors were fabricated using laser ablation and spray Pyrolysis techniques. MgO nanofibers were synthesized by laser ablation of Mg target in distilled water. Also; the ZnO films were prepared by spray pyrolysis technique. The optical and structural properties of nanostructured MgO were investigated using XRD, SEM and FT-IR. The XRD results showed that the MgO was polycrystalline with cubic structure. SEM investigation confirmed the formation of MgO nanofibers and sub-microparticles. The optical energy gaps of MgO and ZnO were calculated and found to be 5.7 eV and 3.3 eV, respectively. For the electrical properties; responsivity, quantum efficiency, specific detectivity, and speed of response of the photodetector were measured and found to enhance after the insertion of nanostructured MgO film. The Photoresponse results at 3 V reverse bias showed that the maximum responsivity of ZnO/Si and ZnO/MgO/Si photodetectors were 185 and 331 mAW‑1 at 500 nm, respectively. The specific detectivity of ZnO/MgO/Si Photodetector was higher than that of ZnO/Si.

Silicon-on-insulator sensors using integrated resonance-enhanced defect-mediated photodetectors.

PubMed

Fard, Sahba Talebi; Murray, Kyle; Caverley, Michael; Donzella, Valentina; Flueckiger, Jonas; Grist, Samantha M; Huante-Ceron, Edgar; Schmidt, Shon A; Kwok, Ezra; Jaeger, Nicolas A F; Knights, Andrew P; Chrostowski, Lukas

2014-11-17

A resonance-enhanced, defect-mediated, ring resonator photodetector has been implemented as a single unit biosensor on a silicon-on-insulator platform, providing a cost effective means of integrating ring resonator sensors with photodetectors for lab-on-chip applications. This method overcomes the challenge of integrating hybrid photodetectors on the chip. The demonstrated responsivity of the photodetector-sensor was 90 mA/W. Devices were characterized using refractive index modified solutions and showed sensitivities of 30 nm/RIU.

Low Voltage Low Light Imager and Photodetector

NASA Technical Reports Server (NTRS)

Nikzad, Shouleh (Inventor); Martin, Chris (Inventor); Hoenk, Michael E. (Inventor)

2013-01-01

Highly efficient, low energy, low light level imagers and photodetectors are provided. In particular, a novel class of Della-Doped Electron Bombarded Array (DDEBA) photodetectors that will reduce the size, mass, power, complexity, and cost of conventional imaging systems while improving performance by using a thinned imager that is capable of detecting low-energy electrons, has high gain, and is of low noise.

Optical Field Confinement Enhanced Single ZnO Microrod UV Photodetector

NASA Astrophysics Data System (ADS)

Wei, Ming; Xu, Chun-Xiang; Qin, Fei-Fei; Gowri Manohari, Arumugam; Lu, Jun-Feng; Zhu, Qiu-Xiang

2017-07-01

ZnO microrods are synthesized using the vapor phase transport method, and the magnetron sputtering is used to decorate the Al nanoparticles (NPs) on a single ZnO microrod. The micro-PL and I-V responses are measured before and after the decoration of Al NPs. The FDTD stimulation is also carried out to demonstrate the optical field distribution around the decoration of Al NPs on the surface of a ZnO microrod. Due to an implementation of Al NPs, the ZnO microrod exhibits an improved photoresponse behavior. In addition, Al NPs induced localized surface plasmons (LSPs) as well as improved optical field confinement can be ascribed to an enhancement of ultraviolet (UV) response. This research provides a method for improving the responsivity of photodetectors. Supported by the National Natural Science Foundation of China under Grant Nos 61475035 and 61275054, the Science and Technology Support Program of Jiangsu Province under Grant No BE2016177, and the Collaborative Innovation Center of Suzhou Nano Science and Technology.

Fabrication of three-dimensional millimeter-height structures using direct ultraviolet lithography on liquid-state photoresist for simple and fast manufacturing

NASA Astrophysics Data System (ADS)

Kim, Jungkwun; Yoon, Yong-Kyu

2015-07-01

A rapid three-dimensional (3-D) ultraviolet (UV) lithography process for the fabrication of millimeter-tall high aspect ratio complex structures is presented. The liquid-state negative-tone photosensitive polyurethane, LF55GN, has been directly photopatterned using multidirectionally projected UV light for 3-D micropattern formation. The proposed lithographic scheme enabled us to overcome the maximum height obtained with a photopatternable epoxy, SU8, which has been conventionally most commonly used for the fabrication of tall and high aspect ratio microstructures. Also, the fabrication process time has been significantly reduced by eliminating photoresist-baking steps. Computer-controlled multidirectional UV lithography has been employed to fabricate 3-D structures, where the UV-exposure substrate is dynamically tilt-rotating during UV exposure to create various 3-D ray traces in the polyurethane layer. LF55GN has been characterized to provide feasible fabrication conditions for the multidirectional UV lithography. Very tall structures including a 6-mm tall triangular slab and a 5-mm tall hexablaze have been successfully fabricated. A 4.5-mm tall air-lifted polymer-core bowtie monopole antenna, which is the tallest monopole structure fabricated by photolithography and subsequent metallization, has been successfully demonstrated. The antenna shows a resonant radiation frequency of 12.34 GHz, a return loss of 36 dB, and a 10 dB bandwidth of 7%.

Synthesis and Characterization of High c-axis ZnO Thin Film by Plasma Enhanced Chemical Vapor Deposition System and its UV Photodetector Application

PubMed Central

Chao, Chung-Hua; Wei, Da-Hua

2015-01-01

In this study, zinc oxide (ZnO) thin films with high c-axis (0002) preferential orientation have been successfully and effectively synthesized onto silicon (Si) substrates via different synthesized temperatures by using plasma enhanced chemical vapor deposition (PECVD) system. The effects of different synthesized temperatures on the crystal structure, surface morphologies and optical properties have been investigated. The X-ray diffraction (XRD) patterns indicated that the intensity of (0002) diffraction peak became stronger with increasing synthesized temperature until 400 oC. The diffraction intensity of (0002) peak gradually became weaker accompanying with appearance of (10-10) diffraction peak as the synthesized temperature up to excess of 400 oC. The RT photoluminescence (PL) spectra exhibited a strong near-band-edge (NBE) emission observed at around 375 nm and a negligible deep-level (DL) emission located at around 575 nm under high c-axis ZnO thin films. Field emission scanning electron microscopy (FE-SEM) images revealed the homogeneous surface and with small grain size distribution. The ZnO thin films have also been synthesized onto glass substrates under the same parameters for measuring the transmittance. For the purpose of ultraviolet (UV) photodetector application, the interdigitated platinum (Pt) thin film (thickness ~100 nm) fabricated via conventional optical lithography process and radio frequency (RF) magnetron sputtering. In order to reach Ohmic contact, the device was annealed in argon circumstances at 450 oC by rapid thermal annealing (RTA) system for 10 min. After the systematic measurements, the current-voltage (I-V) curve of photo and dark current and time-dependent photocurrent response results exhibited a good responsivity and reliability, indicating that the high c-axis ZnO thin film is a suitable sensing layer for UV photodetector application. PMID:26484561

Pseudo 2-transistor active pixel sensor using an n-well/gate-tied p-channel metal oxide semiconductor field eeffect transistor-type photodetector with built-in transfer gate

NASA Astrophysics Data System (ADS)

Seo, Sang-Ho; Seo, Min-Woong; Kong, Jae-Sung; Shin, Jang-Kyoo; Choi, Pyung

2008-11-01

In this paper, a pseudo 2-transistor active pixel sensor (APS) has been designed and fabricated by using an n-well/gate-tied p-channel metal oxide semiconductor field effect transistor (PMOSFET)-type photodetector with built-in transfer gate. The proposed sensor has been fabricated using a 0.35 μm 2-poly 4-metal standard complementary metal oxide semiconductor (CMOS) logic process. The pseudo 2-transistor APS consists of two NMOSFETs and one photodetector which can amplify the generated photocurrent. The area of the pseudo 2-transistor APS is 7.1 × 6.2 μm2. The sensitivity of the proposed pixel is 49 lux/(V·s). By using this pixel, a smaller pixel area and a higher level of sensitivity can be realized when compared with a conventional 3-transistor APS which uses a pn junction photodiode.

Photodetectors on Coronagraph Mask for Pointing Control

NASA Technical Reports Server (NTRS)

Balasubramanian, Kunjithapatham

2007-01-01

It has been proposed to install a symmetrical array of photodetectors about the center of the mask of a coronagraph of the type used to search for planets orbiting remote stars. The purpose of this installation is to utilize the light from a star under observation as a guide in pointing the telescope. Simple arithmetic processing of the outputs of the photodetectors would provide indications of the lateral position of the center of the mask relative to the center of the image of the star. These indications could serve as pointing-control feedback signals for adjusting the telescope aim to center the image of the star on the mask. The widths of central mask areas available for placement of photodetectors differ among coronagraph designs, typically ranging upward from about 100 m. Arrays of photodetectors can readily be placed within areas in this size range. The number of detectors in an array could be as small as 4 or as large as 64. The upper limit on the number of detectors would be determined according to the extent of the occulting pattern and the number of functionalities, in addition to pointing control, to be served by the array.

Hybrid photodetector based on CsPbBr3 perovskite nanocrystals and PC71BM fullerene derivative

NASA Astrophysics Data System (ADS)

Li, Tengteng; Liu, Meihong; Li, Qingyan; Chen, Run; Liu, Xin

2018-05-01

Here, a hybrid perovskite-organic photodetector was fabricated by integrating CsPbBr3 nanocrystals (NCs) with [6,6]-phenyl C71 butyric acid methyl ester (PC71BM), exhibiting remarkable optoelectronic properties in terms of photoresponsivity (1.72 A/W), detectivity (1.76 × 107 Jones), external quantum efficiency (EQE) (530%) under the illumination of 405 nm laser, and photoresponse time is shorter than 0.1 ms due to the assistance of heterojunction on the separation of photoexcitons.

Photoresist: Fabrication, Characterization and Its Sensitivity on the Exposures of X-Ray and Ultraviolet

NASA Astrophysics Data System (ADS)

Sutikno; Susilo; Raharja, H. D.

2018-05-01

The epoxy resin-based photoresist is fabricated by mixing of resin (polymer), sodium acetate trihydrate and ethanol in mass variation using heated magnetic stirrer at 100 rpm speed and temperature of 75 °C. Sodium acetate trihydrate and ethanol each play role as photoactive compound (PAC) and solvent, respectively. Photoresist thin films were grown through spin coating method in voltage 5 V during the 60 s and heating temperature of 150 °C for 15 min. To determine photoresist sensitivity, ultraviolet and X-ray were exposed on the photoresist surfaces. The fabricated photoresist properties are densities of 1 g·mL‑1 to 1.23 g·mL‑1, dynamic viscosities of 7 Cp to 22 Cp and kinematic viscosities of 7 Cst to 18 Cst. The absorbances of thin films are in the wavelength range of 350 nm to 1050 nm at the maximum absorbances of 0.2 to 0.5 in the wavelength g-line, h-line, and i-line. The generated maximum current achieved (1.84 × 10‑8) A. The microstructures of epoxy-based photoresist seem homogeneous. The sensitivities of UV exposures show a photochemistry reaction on photoresist occurred, however for X-ray exposure no reaction found.

Semiconductor superlattice photodetectors

NASA Technical Reports Server (NTRS)

Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

1986-01-01

Superlattice photodetectors were investigated. A few major physical processes in the quantum-well heterostructures related to the photon detection and electron conduction mechanisms, the field effect on the wave functions and the energy levels of the electrons, and the optical absorption with and without the photon assistance were studied.

Photogating in Low Dimensional Photodetectors

PubMed Central

Fang, Hehai

2017-01-01

Abstract Low dimensional materials including quantum dots, nanowires, 2D materials, and so forth have attracted increasing research interests for electronic and optoelectronic devices in recent years. Photogating, which is usually observed in photodetectors based on low dimensional materials and their hybrid structures, is demonstrated to play an important role. Photogating is considered as a way of conductance modulation through photoinduced gate voltage instead of simply and totally attributing it to trap states. This review first focuses on the gain of photogating and reveals the distinction from conventional photoconductive effect. The trap‐ and hybrid‐induced photogating including their origins, formations, and characteristics are subsequently discussed. Then, the recent progress on trap‐ and hybrid‐induced photogating in low dimensional photodetectors is elaborated. Though a high gain bandwidth product as high as 109 Hz is reported in several cases, a trade‐off between gain and bandwidth has to be made for this type of photogating. The general photogating is put forward according to another three reported studies very recently. General photogating may enable simultaneous high gain and high bandwidth, paving the way to explore novel high‐performance photodetectors. PMID:29270342

MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection

DTIC Science & Technology

2012-09-01

MSM) photodectors fabricated using black silicon-germanium on silicon substrate (Si1–xGex//Si) for I-V, optical response, external quantum ...material for Si for many applications in low-power and high-speed semiconductor device technologies (4, 5). It is a promising material for quantum well ...MSM-Metal Semiconductor Metal Photo-detector Using Black Silicon Germanium (SiGe) for Extended Wavelength Near Infrared Detection by Fred

Ge-Photodetectors for Si-Based Optoelectronic Integration

PubMed Central

Wang, Jian; Lee, Sungjoo

2011-01-01

High speed photodetectors are a key building block, which allow a large wavelength range of detection from 850 nm to telecommunication standards at optical fiber band passes of 1.3–1.55 μm. Such devices are key components in several applications such as local area networks, board to board, chip to chip and intrachip interconnects. Recent technological achievements in growth of high quality SiGe/Ge films on Si wafers have opened up the possibility of low cost Ge-based photodetectors for near infrared communication bands and high resolution spectral imaging with high quantum efficiencies. In this review article, the recent progress in the development and integration of Ge-photodetectors on Si-based photonics will be comprehensively reviewed, along with remaining technological issues to be overcome and future research trends. PMID:22346598

Low dark current and high speed ZnO metal–semiconductor–metal photodetector on SiO{sub 2}/Si substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Çalışkan, Deniz, E-mail: dcaliskan@fen.bilkent.edu.tr; Department of Nanotechnology and Nanomedicine, Hacettepe University, 06800 Beytepe, Ankara; Bütün, Bayram

2014-10-20

ZnO thin films are deposited by radio-frequency magnetron sputtering on thermally grown SiO{sub 2} on Si substrates. Pt/Au contacts are fabricated by standard photolithography and lift-off in order to form a metal-semiconductor-metal (MSM) photodetector. The dark current of the photodetector is measured as 1 pA at 100 V bias, corresponding to 100 pA/cm{sup 2} current density. Spectral photoresponse measurement showed the usual spectral behavior and 0.35 A/W responsivity at a 100 V bias. The rise and fall times for the photocurrent are measured as 22 ps and 8 ns, respectively, which are the lowest values to date. Scanning electron microscope image shows high aspect ratio andmore » dense grains indicating high surface area. Low dark current density and high speed response are attributed to high number of recombination centers due to film morphology, deducing from photoluminescence measurements. These results show that as deposited ZnO thin film MSM photodetectors can be used for the applications needed for low light level detection and fast operation.« less

Reflectively Coupled Waveguide Photodetector for High Speed Optical Interconnection

PubMed Central

Hsu*, Shih-Hsiang

2010-01-01

To fully utilize GaAs high drift mobility, techniques to monolithically integrate In0.53Ga0.47As p-i-n photodetectors with GaAs based optical waveguides using total internal reflection coupling are reviewed. Metal coplanar waveguides, deposited on top of the polyimide layer for the photodetector’s planarization and passivation, were then uniquely connected as a bridge between the photonics and electronics to illustrate the high-speed monitoring function. The photodetectors were efficiently implemented and imposed on the echelle grating circle for wavelength division multiplexing monitoring. In optical filtering performance, the monolithically integrated photodetector channel spacing was 2 nm over the 1,520–1,550 nm wavelength range and the pass band was 1 nm at the −1 dB level. For high-speed applications the full-width half-maximum of the temporal response and 3-dB bandwidth for the reflectively coupled waveguide photodetectors were demonstrated to be 30 ps and 11 GHz, respectively. The bit error rate performance of this integrated photodetector at 10 Gbit/s with 27-1 long pseudo-random bit sequence non-return to zero input data also showed error-free operation. PMID:22163502

Fabrication of a Graphene/ZnO based p-n junction device and its ultraviolet photoresponse properties

NASA Astrophysics Data System (ADS)

Kwon, Young-Tae; Kang, Sung-Oong; Cheon, Ji-Ae; Song, Yoseb; Lee, Jong-Jin; Choa, Yong-Ho

2017-09-01

Graphene with a zero-bandgap energy is easily doped using a chemical dopant, and a shift upwards or downwards in the Fermi level is generated. Moreover, the integration of inorganic material into the doped graphene changes the physical and chemical properties of the material. For this purpose, we successfully fabricated a p-n junction device by depositing an n-typed ZnO layer on p-doped graphene and studied the ultraviolet (UV) photoresponse properties under a photocurrent (UV light on) and a dark current (UV light off). Two devices, lateral and vertical, were developed by alternating the thickness of the ZnO layer, and the photoresponse mechanisms were described on the basis of the contact potential difference.

Monolithic integration of SOI waveguide photodetectors and transimpedance amplifiers

NASA Astrophysics Data System (ADS)

Li, Shuxia; Tarr, N. Garry; Ye, Winnie N.

2018-02-01

In the absence of commercial foundry technologies offering silicon-on-insulator (SOI) photonics combined with Complementary Metal Oxide Semiconductor (CMOS) transistors, monolithic integration of conventional electronics with SOI photonics is difficult. Here we explore the implementation of lateral bipolar junction transistors (LBJTs) and Junction Field Effect Transistors (JFETs) in a commercial SOI photonics technology lacking MOS devices but offering a variety of n- and p-type ion implants intended to provide waveguide modulators and photodetectors. The fabrication makes use of the commercial Institute of Microelectronics (IME) SOI photonics technology. Based on knowledge of device doping and geometry, simple compact LBJT and JFET device models are developed. These models are then used to design basic transimpedance amplifiers integrated with optical waveguides. The devices' experimental current-voltage characteristics results are reported.

Gamma-ray detector employing scintillators coupled to semiconductor drift photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwanczyk, Jan S.; Patt, Bradley E.

Radiation detectors according to one embodiment of the invention are implemented using scintillators combined with a semiconductor drift photodetectors wherein the components are specifically constructed in terms of their geometry, dimensions, and arrangement so that the scintillator decay time and drift time in the photodetector pairs are matched in order to achieve a greater signal-to-noise ratio. The detectors may include electronics for amplification of electrical signals produced by the silicon drift photodetector, the amplification having a shaping time optimized with respect to the decay time of the scintillator and time spread of the signal in the silicon drift photodetector tomore » substantially maximize the ratio of the signal to the electronic noise.« less

Fast, Large-Area, Wide-Bandgap UV Photodetector for Cherenkov Light Detection

NASA Technical Reports Server (NTRS)

Wrbanek, John D.; Wrbanek, Susan Y.

2013-01-01

Due to limited resources available for power and space for payloads, miniaturizing and integrating instrumentation is a high priority for addressing the challenges of manned and unmanned deep space missions to high Earth orbit (HEO), near Earth objects (NEOs), Lunar and Martian orbits and surfaces, and outer planetary systems, as well as improvements to high-altitude aircraft safety. New, robust, and compact detectors allow future instrumentation packages more options in satisfying specific mission goals. A solid-state ultraviolet (UV) detector was developed with a theoretical fast response time and large detection area intended for application to Cherenkov detectors. The detector is based on the wide-bandgap semiconductor zinc oxide (ZnO), which in a bridge circuit can detect small, fast pulses of UV light like those required for Cherenkov detectors. The goal is to replace the role of photomultiplier tubes in Cherenkov detectors with these solid-state devices, saving on size, weight, and required power. For improving detection geometry, a spherical detector to measure high atomic number and energy (HZE) ions from any direction has been patented as part of a larger space radiation detector system. The detector will require the development of solid-state UV photodetectors fast enough (2 ns response time or better) to detect the shockwave of Cherenkov light emitted as the ions pass through a quartz, sapphire, or acrylic ball. The detector must be small enough to fit in the detector system structure, but have an active area large enough to capture enough Cherenkov light from the sphere. The detector is fabricated on bulk single-crystal undoped ZnO. Inter - digitated finger electrodes and contact pads are patterned via photolithography, and formed by sputtered metal of silver, platinum, or other high-conductivity metal.

A Novel, Free-Space Optical Interconnect Employing Vertical-Cavity Surface Emitting Laser Diodes and InGaAs Metal-Semiconductor-Metal Photodetectors for Gbit/s RF/Microwave Systems

NASA Technical Reports Server (NTRS)

Savich, Gregory R.; Simons, Rainee N.

2006-01-01

Emerging technologies and continuing progress in vertical-cavity surface emitting laser (VCSEL) diode and metal-semiconductor-metal (MSM) photodetector research are making way for novel, high-speed forms of optical data transfer in communication systems. VCSEL diodes operating at 1550 nm have only recently become commercially available, while MSM photodetectors are pushing the limits of contact lithography with interdigitated electrode widths reaching sub micron levels. We propose a novel, free-space optical interconnect operating at about 1Gbit/s utilizing VCSEL diodes and MSM photodetectors. We report on development, progress, and current work, which are as follows: first, analysis of the divergent behavior of VCSEL diodes for coupling to MSM photodetectors with a 50 by 50 m active area and second, the normalized frequency response of the VCSEL diode as a function of the modulating frequency. Third, the calculated response of MSM photodetectors with varying electrode width and spacing on the order of 1 to 3 m as well as the fabrication and characterization of these devices. The work presented here will lead to the formation and characterization of a fully integrated 1Gbit/s free-space optical interconnect at 1550 nm and demonstrates both chip level and board level functionality for RF/microwave digital systems.

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors.

PubMed

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I; Monroy, Eva

2018-06-22

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current-voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Effect of the nanowire diameter on the linearity of the response of GaN-based heterostructured nanowire photodetectors

NASA Astrophysics Data System (ADS)

Spies, Maria; Polaczyński, Jakub; Ajay, Akhil; Kalita, Dipankar; Luong, Minh Anh; Lähnemann, Jonas; Gayral, Bruno; den Hertog, Martien I.; Monroy, Eva

2018-06-01

Nanowire photodetectors are investigated because of their compatibility with flexible electronics, or for the implementation of on-chip optical interconnects. Such devices are characterized by ultrahigh photocurrent gain, but their photoresponse scales sublinearly with the optical power. Here, we present a study of single-nanowire photodetectors displaying a linear response to ultraviolet illumination. Their structure consists of a GaN nanowire incorporating an AlN/GaN/AlN heterostructure, which generates an internal electric field. The activity of the heterostructure is confirmed by the rectifying behavior of the current–voltage characteristics in the dark, as well as by the asymmetry of the photoresponse in magnitude and linearity. Under reverse bias (negative bias on the GaN cap segment), the detectors behave linearly with the impinging optical power when the nanowire diameter is below a certain threshold (≈80 nm), which corresponds to the total depletion of the nanowire stem due to the Fermi level pinning at the sidewalls. In the case of nanowires that are only partially depleted, their nonlinearity is explained by a nonlinear variation of the diameter of their central conducting channel under illumination.

Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction

NASA Astrophysics Data System (ADS)

Zhang, Teng-Fei; Li, Zhi-Peng; Wang, Jiu-Zhen; Kong, Wei-Yu; Wu, Guo-An; Zheng, Yu-Zhen; Zhao, Yuan-Wei; Yao, En-Xu; Zhuang, Nai-Xi; Luo, Lin-Bao

2016-12-01

In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm. In addition, the SLG-CNTF device had a fast response speed (τr = 68 μs, τf = 78 μs) and good reproducibility in a wide range of switching frequencies (50-5400 Hz). The on-off ratio, responsivity, and detectivity of the device were estimated to be 1 × 102, 209 mAW-1 and 4.87 × 1010 cm Hz1/2 W-1, respectively. What is more, other device parameters including linear performance θ and linear dynamic range (LDR) were calculated to be 0.99 and 58.8 dB, respectively, which were relatively better than other carbon nanotube based devices. The totality of the above study signifies that the present SLG-CNTF Schottky junction broadband nano-photodetector may have promising application in future nano-optoelectronic devices and systems.

Broadband photodetector based on carbon nanotube thin film/single layer graphene Schottky junction

PubMed Central

Zhang, Teng-Fei; Li, Zhi-Peng; Wang, Jiu-Zhen; Kong, Wei-Yu; Wu, Guo-An; Zheng, Yu-Zhen; Zhao, Yuan-Wei; Yao, En-Xu; Zhuang, Nai-Xi; Luo, Lin-Bao

2016-01-01

In this study, we present a broadband nano-photodetector based on single-layer graphene (SLG)-carbon nanotube thin film (CNTF) Schottky junction. It was found that the as-fabricated device exhibited obvious sensitivity to a wide range of illumination, with peak sensitivity at 600 and 920 nm. In addition, the SLG-CNTF device had a fast response speed (τr = 68 μs, τf = 78 μs) and good reproducibility in a wide range of switching frequencies (50–5400 Hz). The on-off ratio, responsivity, and detectivity of the device were estimated to be 1 × 102, 209 mAW−1 and 4.87 × 1010 cm Hz1/2 W−1, respectively. What is more, other device parameters including linear performance θ and linear dynamic range (LDR) were calculated to be 0.99 and 58.8 dB, respectively, which were relatively better than other carbon nanotube based devices. The totality of the above study signifies that the present SLG-CNTF Schottky junction broadband nano-photodetector may have promising application in future nano-optoelectronic devices and systems. PMID:27929053

Design and fabrication of vertically-integrated CMOS image sensors.

PubMed

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors.

Circular electrode geometry metal-semiconductor-metal photodetectors

NASA Technical Reports Server (NTRS)

Mcaddo, James A. (Inventor); Towe, Elias (Inventor); Bishop, William L. (Inventor); Wang, Liang-Guo (Inventor)

1994-01-01

The invention comprises a high speed, metal-semiconductor-metal photodetector which comprises a pair of generally circular, electrically conductive electrodes formed on an optically active semiconductor layer. Various embodiments of the invention include a spiral, intercoiled electrode geometry and an electrode geometry comprised of substantially circular, concentric electrodes which are interposed. These electrode geometries result in photodetectors with lower capacitances, dark currents and lower inductance which reduces the ringing seen in the optical pulse response.

Highly Transparent, Visible-Light Photodetector Based on Oxide Semiconductors and Quantum Dots.

PubMed

Shin, Seung Won; Lee, Kwang-Ho; Park, Jin-Seong; Kang, Seong Jun

2015-09-09

Highly transparent phototransistors that can detect visible light have been fabricated by combining indium-gallium-zinc oxide (IGZO) and quantum dots (QDs). A wide-band-gap IGZO film was used as a transparent semiconducting channel, while small-band-gap QDs were adopted to absorb and convert visible light to an electrical signal. Typical IGZO thin-film transistors (TFTs) did not show a photocurrent with illumination of visible light. However, IGZO TFTs decorated with QDs showed enhanced photocurrent upon exposure to visible light. The device showed a responsivity of 1.35×10(4) A/W and an external quantum efficiency of 2.59×10(4) under illumination by a 635 nm laser. The origin of the increased photocurrent in the visible light was the small band gap of the QDs combined with the transparent IGZO films. Therefore, transparent phototransistors based on IGZO and QDs were fabricated and characterized in detail. The result is relevant for the development of highly transparent photodetectors that can detect visible light.

Towards on-chip integration of brain imaging photodetectors using standard CMOS process.

PubMed

Kamrani, Ehsan; Lesage, Frederic; Sawan, Mohamad

2013-01-01

The main effects of on-chip integration on the performance and efficiency of silicon avalanche photodiode (SiAPD) and photodetector front-end is addressed in this paper based on the simulation and fabrication experiments. Two different silicon APDs are fabricated separately and also integrated with a transimpedance amplifier (TIA) front-end using standard CMOS technology. SiAPDs are designed in p+/n-well structure with guard rings realized in different shapes. The TIA front-end has been designed using distributed-gain concept combined with resistive-feedback and common-gate topology to reach low-noise and high gain-bandwidth product (GBW) characteristics. The integrated SiAPDs show higher signal-to-noise ratio (SNR), sensitivity and detection efficiency comparing to the separate SiAPDs. The integration does not show a significant effect on the gain and preserves the low power consumption. Using APDs with p-well guard-ring is preferred due to the higher observed efficiency after integration.

Resonant photodetector for cavity- and phase-locking of squeezed state generation.

PubMed

Chen, Chaoyong; Li, Zhixiu; Jin, Xiaoli; Zheng, Yaohui

2016-10-01

Based on the requirement of squeezed state generation, we build the phase relationship between two electronic local oscillators for the cavity- and phase-locking branches, and a 2-way 90° power splitter is adopted to satisfy the phase relationship simultaneously, which greatly simplifies the experimental setup and adjusting process. A LC parallel resonant circuit, which is composed by the inherent capacitance of a photodiode and an extra inductor, is adopted in the resonant photodetector to improve the gain factor at the expected frequency. The gain of the resonant photodetector is about 30 dB higher than that of the broadband photodetector at the resonant frequency. The peak-to-peak value of the error signal for cavity-locking (phase-locking) with the resonant photodetector is 240 (260) times of that with the broadband photodetector, which can improve the locking performance on the premise of not affecting the squeezing degree.

The operation principle of the well in quantum dot stack infrared photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Jheng-Han; Wu, Zong-Ming; Liao, Yu-Min

2013-12-28

The well in the quantum dot stack infrared photodetector (WD-QDIP) is proposed which can be operated at high temperature ∼230 K. The operation principle of this device is investigated, including the carrier transport and the enhancement in the photocurrent. The WD-QDIPs with different well numbers are fabricated to study the mechanisms. It is realized that the carrier transport from the emitter to the collector in traditional quantum dot infrared photodetectors consists of two channels deduced from current-voltage characteristics and dark current activation energy at different temperatures. At temperatures below 77 K, the current transports through the InAs quantum dot channel, whereas atmore » temperatures higher than 77 K, the current is dominated by the GaAs leakage channel. In addition, the non-equilibrium situation at low temperatures is also observed owing to the presence of photovoltaic phenomenon. The carrier distribution inside the QDs is simulated to investigate the reasons for the increase of photocurrent. Based on the simulation and the photocurrent response, the hot carrier (electron) scattering effect by the insertion of a quantum well layer is inferred as the most probable reason that lead to the enhancement of the response and regarded as the key factor to achieve high- temperature operation.« less

Synthesis of Zn1-xCdxO Nanoparticles by Co-Precipitation: Structural, Optical and Photodetection Analysis

NASA Astrophysics Data System (ADS)

Jacob, Anju Anna; Balakrishnan, L.; Meher, S. R.; Shambavi, K.; Alex, Z. C.

Zinc oxide (ZnO) is a wide bandgap semiconductor with excellent photoresponse in ultra-violet (UV) regime. Tuning the bandgap of ZnO by alloying with cadmium can shift its absorption cutoff wavelength from UV to visible (Vis) region. Our work aims at synthesis of Zn1-xCdxO nanoparticles by co-precipitation method for the fabrication of photodetector. The properties of nanoparticles were analyzed using X-ray diffractometer, UV-Vis spectrometer, scanning electron microscope and energy dispersive spectrometer. The incorporation of cadmium without altering the wurtzite structure resulted in the red shift in the absorption edge of ZnO. Further, the photoresponse characteristics of Zn1-xCdxO nanopowders were investigated by fabricating photodetectors. It has been found that with Cd alloying the photosensitivity was increased in the UVA-violet as well in the blue region.

A self-powered nano-photodetector based on PFH/ZnO nanorods organic/inorganic heterojunction

NASA Astrophysics Data System (ADS)

Li, Xiaoyun; Liu, Wei; Li, Peigang; Song, Jia; An, Yuehua; Shen, Jingqin; Wang, Shunli; Guo, Daoyou

2018-03-01

PFH/ZnO nanorods heterojunctions were fabricated by spin-coating p-type Poly (9,9-dihexylfluorene) (PFH) on n-type vertically aligned ZnO nanorod arrays grown by a facile hydrothermal method on indium tin oxide (ITO) transparent conductive glass. A typical p-n junction behavior was observed in the fabricated heterojunction. The current of heterojunction increases and decreases dramatically by switching the illumination on and off at zero bias, showing potential self-powered photodetector applications. The heterojunction were capable of generating negative current when illuminated under an appropriate wavelength. The photoresponse properties of the heterojunction can be tuned by the applied bias. In vacuum, the rectifying behavior disappeared, and show only simple semiconductor behavior. Band structure of the heterojunction was schematic drawn and explain the mechanism of the properties of PFH/ZnO nanorods heterojunctions.

Infrared photodetectors based on graphene van der Waals heterostructures

NASA Astrophysics Data System (ADS)

Ryzhii, V.; Ryzhii, M.; Svintsov, D.; Leiman, V.; Mitin, V.; Shur, M. S.; Otsuji, T.

2017-08-01

We propose and evaluate the graphene layer (GL) infrared photodetectors (GLIPs) based on the van der Waals (vdW) heterostructures with the radiation absorbing GLs. The operation of the GLIPs is associated with the electron photoexcitation from the GL valence band to the continuum states above the inter-GL barriers (either via tunneling or direct transitions to the continuum states). Using the developed device model, we calculate the photodetector characteristics as functions of the GL-vdW heterostructure parameters. We show that due to a relatively large efficiency of the electron photoexcitation and low capture efficiency of the electrons propagating over the barriers in the inter-GL layers, GLIPs should exhibit the elevated photoelectric gain and detector responsivity as well as relatively high detectivity. The possibility of high-speed operation, high conductivity, transparency of the GLIP contact layers, and the sensitivity to normally incident IR radiation provides additional potential advantages in comparison with other IR photodetectors. In particular, the proposed GLIPs can compete with unitravelling-carrier photodetectors.

A novel high-performance self-powered ultraviolet photodetector: Concept, analytical modeling and analysis

NASA Astrophysics Data System (ADS)

Ferhati, H.; Djeffal, F.

2017-12-01

In this paper, a new MSM-UV-photodetector (PD) based on dual wide band-gap material (DM) engineering aspect is proposed to achieve high-performance self-powered device. Comprehensive analytical models for the proposed sensor photocurrent and the device properties are developed incorporating the impact of DM aspect on the device photoelectrical behavior. The obtained results are validated with the numerical data using commercial TCAD software. Our investigation demonstrates that the adopted design amendment modulates the electric field in the device, which provides the possibility to drive appropriate photo-generated carriers without an external applied voltage. This phenomenon suggests achieving the dual role of effective carriers' separation and an efficient reduce of the dark current. Moreover, a new hybrid approach based on analytical modeling and Particle Swarm Optimization (PSO) is proposed to achieve improved photoelectric behavior at zero bias that can ensure favorable self-powered MSM-based UV-PD. It is found that the proposed design methodology has succeeded in identifying the optimized design that offers a self-powered device with high-responsivity (98 mA/W) and superior ION/IOFF ratio (480 dB). These results make the optimized MSM-UV-DM-PD suitable for providing low cost self-powered devices for high-performance optical communication and monitoring applications.

ZnO-based ultra-violet light emitting diodes and nanostructures fabricated by atomic layer deposition

NASA Astrophysics Data System (ADS)

Chen, Miin-Jang; Yang, Jer-Ren; Shiojiri, Makoto

2012-07-01

We have investigated ZnO-based light-emitting diodes (LEDs) fabricated by atomic layer deposition (ALD), demonstrating that ALD is one of the noteworthy techniques to prepare high-quality ZnO required for ultraviolet (UV) photonic devices. Here, we review our recent investigations on different ZnO-based heterojunction LEDs such as n-ZnO/p-GaN LEDS, n-ZnO:Al/ZnO nanodots-SiO2 composite/p-GaN LEDS, n-ZnO/ZnO nanodots-SiO2 composite/p-AlGaN LEDs, n-ZnO:Al/i-ZnO/p-SiC(4H) LEDs, and also on ZnO-based nanostructures including ZnO quantum dots embedded in SiO2 nanoparticle layer, ZnO nanopillars on sapphire substrates, Al-doped ZnO films on sapphire substrate and highly (0 0 0 1)-oriented ZnO films on amorphous glass substrate. The latest investigation also demonstrated p-type ZnO:P films prepared on amorphous silica substrates, which allow us to fabricate ZnO-based homojunction LEDs. These devices and structures were studied by x-ray diffraction and various analytical electron microscopy observations as well as electric and electro-optical measurements.

Photodetectors based on carbon nanotubes deposited by using a spray technique on semi-insulating gallium arsenide

PubMed Central

Nitti, Maria Angela; Valentini, Marco; Valentini, Antonio; Ligonzo, Teresa; De Pascali, Giuseppe; Ambrico, Marianna

2014-01-01

Summary In this paper, a spray technique is used to perform low temperature deposition of multi-wall carbon nanotubes on semi-insulating gallium arsenide in order to obtain photodectors. A dispersion of nanotube powder in non-polar 1,2-dichloroethane is used as starting material. The morphological properties of the deposited films has been analysed by means of electron microscopy, in scanning and transmission mode. Detectors with different layouts have been prepared and current–voltage characteristics have been recorded in the dark and under irradiation with light in the range from ultraviolet to near infrared. The device spectral efficiency obtained from the electrical characterization is finally reported and an improvement of the photodetector behavior due to the nanotubes is presented and discussed. PMID:25383309

Fabrication of high responsivity deep UV photo-detector based on Na doped ZnO nanocolumns

NASA Astrophysics Data System (ADS)

Agrawal, Jitesh; Dixit, Tejendra; Palani, I. A.; Ramachandra Rao, M. S.; Singh, Vipul

2018-05-01

We report a variety of the hydrothermally synthesized ZnO nanostructures with a significant suppression in defect-related emission and huge enhancement in the photo-current to the dark current ratio (approximately six orders of magnitude) upon UV light illumination. Interestingly, the photo-detector shows lower dark current of 1.6 nA with high responsivity of 507 A W‑1 at 254 nm. Here, a systematic analysis of the growth process as well as the physical, chemical and electrical properties of as-grown ZnO nanostructures has been performed. We have utilized the duo effect of both the inorganic (KMnO4) and organic (Na3C6H5O7) additives, which has facilitated the precise tuning of the morphology and intrinsic defects in nanostructures that have made an impact on the photo-responsivity, photoluminescence (PL) and adhesivity of the film on to the underlying substrate. PL analysis of as-grown ZnO nanostructures has suggested 11 times improvement in the near band emission (NBE) to defect level emission (DLE) ratio. Interestingly, thermal annealing of the samples has shown a dramatic change in the morphology with significant improvement in the crystallinity. Notably, the band gap was observed to be modulated from 3.3 eV to 3.1 eV after annealing. In addition to UV photo-detector based applications, the work presented here has provided a subtle solution towards the rectification of various problems pertaining to hydrothermal processes like poor adhesivity, feeble UV emission and problem in precise tuning of the morphology along with the bandgap in one go. Therefore, these investigations assume critical significance towards the development of next-generation optoelectronic devices.

Infrared photodetectors based on reduced graphene oxide nanoparticles and graphene oxide

NASA Astrophysics Data System (ADS)

Ahmad, H.; Tajdidzadeh, M.; Thambiratnam, K.; Yasin, M.

2018-06-01

Two photodiode (PD) designs incorporating graphene oxide (GO) and reduced graphene oxide (rGO) are proposed and fabricated. Both PDs have 50 mm thick silver electrodes deposited on the active area, and another electrode consisting of either GO or rGO nanoparticles (NPs). The GO and rGO NPs are deposited onto the p-type silicon substrate by the drop casting method. Both fabricated PDs show good sensitivity and quick responses under 974 nm laser illumination at 150 mW. The photoresponsivity values and external quantum efficiency of both photodetectors are measured to be approximately 800 µAw‑1 and 0.12% for the GO based PD and 1.6 m Aw‑1 and 0.20% for the rGO based PD. Both PDs also have response and recovery times of 114 µs and 276 µs as well as 11 µs and 678 µs for the GO and rGO based PDs respectively. The proposed PDs would have significant applications in many optoelectronic devices as well as nanoelectronics.

Low-noise, transformer-coupled resonant photodetector for squeezed state generation.

PubMed

Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

2017-10-01

In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8×10 5 V/A, and the input current noise of less than 4.7 pA/Hz. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

Semiconductor superlattice photodetectors

NASA Technical Reports Server (NTRS)

Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

1986-01-01

During the past half-year, the research effort centered on further investigating both the new superlattice photomultiplier with tunneling-assisted impact ionization and the photodetector based on the real space transfer mechanism. A brief outline of the current status of these projects is presented. Detailed analyses are included in Appendices A and B. New results of the tunneling-assisted impact ionization are presented.

Mid-infrared photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guyot-Sionnest, Philippe; Keuleyan, Sean E.; Lhuillier, Emmanuel

2016-04-19

Nanoparticles, methods of manufacture, devices comprising the nanoparticles, methods of their manufacture, and methods of their use are provided herein. The nanoparticles and devices having photoabsorptions in the range of 1.7 .mu.m to 12 .mu.m and can be used as photoconductors, photodiodes, phototransistors, charge-coupled devices (CCD), luminescent probes, lasers, thermal imagers, night-vision systems, and/or photodetectors.

TiO2 Nanowires/Poly(Methyl Methacrylate) Based Hybrid Photodetector: Improved Light Detection.

PubMed

Saha, S; Mondal, A; Choudhur, B; Goswami, T; Sarkar, M B; Chattopadhyay, K K

2016-03-01

Hybrid photodetector with a maximum external quantum efficiency of ~3.08% in the UV region at 370 nm, was fabricated by spin-coated poly(methyl methacrylate) (PMMA) polymer onto glancing angle deposited (GLAD) vertically aligned TiO2 nanowire (NW) arrays. The TiO2 NWs/PMMA detector shows excellent rectification and constant 1.3 times photo-responsivity in the reverse bias condition from -1 V to -10 V. The photodiode possesses a low ideality factor of 5.1 as compared to bared TiO2 NWs device of 7.1. The hybrid device produces sharp turn-on of -0.8 s and turn-off transient of -0.9 s respectively.

Low-Voltage High-Performance UV Photodetectors: An Interplay between Grain Boundaries and Debye Length.

PubMed

Bo, Renheng; Nasiri, Noushin; Chen, Hongjun; Caputo, Domenico; Fu, Lan; Tricoli, Antonio

2017-01-25

Accurate detection of UV light by wearable low-power devices has many important applications including environmental monitoring, space to space communication, and defense. Here, we report the structural engineering of ultraporous ZnO nanoparticle networks for fabrication of very low-voltage high-performance UV photodetectors. A record high photo- to dark-current ratio of 3.3 × 10 5 and detectivity of 3.2 × 10 12 Jones at an ultralow operation bias of 2 mV and low UV-light intensity of 86 μW·cm -2 are achieved by controlling the interplay between grain boundaries and surface depletion depth of ZnO nanoscale semiconductors. An optimal window of structural properties is determined by varying the particle size of ultraporous nanoparticle networks from 10 to 42 nm. We find that small electron-depleted nanoparticles (≤40 nm) are necessary to minimize the dark-current; however, the rise in photocurrent is tampered with decreasing particle size due to the increasing density of grain boundaries. These findings reveal that nanoparticles with a size close to twice their Debye length are required for high photo- to dark-current ratio and detectivity, while further decreasing their size decreases the photodetector performance.

Photodetector having high speed and sensitivity

DOEpatents

Morse, Jeffrey D.; Mariella, Jr., Raymond P.

1991-01-01

The present invention provides a photodetector having an advantageous combination of sensitivity and speed; it has a high sensitivity while retaining high speed. In a preferred embodiment, visible light is detected, but in some embodiments, x-rays can be detected, and in other embodiments infrared can be detected. The present invention comprises a photodetector having an active layer, and a recombination layer. The active layer has a surface exposed to light to be detected, and comprises a semiconductor, having a bandgap graded so that carriers formed due to interaction of the active layer with the incident radiation tend to be swept away from the exposed surface. The graded semiconductor material in the active layer preferably comprises Al.sub.1-x Ga.sub.x As. An additional sub-layer of graded In.sub.1-y Ga.sub.y As may be included between the Al.sub.1-x Ga.sub.x As layer and the recombination layer. The recombination layer comprises a semiconductor material having a short recombination time such as a defective GaAs layer grown in a low temperature process. The recombination layer is positioned adjacent to the active layer so that carriers from the active layer tend to be swept into the recombination layer. In an embodiment, the photodetector may comprise one or more additional layers stacked below the active and recombination layers. These additional layers may include another active layer and another recombination layer to absorb radiation not absorbed while passing through the first layers. A photodetector having a stacked configuration may have enhanced sensitivity and responsiveness at selected wavelengths such as infrared.

SNR characteristics of 850-nm OEIC receiver with a silicon avalanche photodetector.

PubMed

Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

2014-01-13

We investigate signal-to-noise ratio (SNR) characteristics of an 850-nm optoelectronic integrated circuit (OEIC) receiver fabricated with standard 0.25-µm SiGe bipolar complementary metal-oxide-semiconductor (BiCMOS) technology. The OEIC receiver is composed of a Si avalanche photodetector (APD) and BiCMOS analog circuits including a transimpedance amplifier with DC-balanced buffer, a tunable equalizer, a limiting amplifier, and an output buffer with 50-Ω loads. We measure APD SNR characteristics dependence on the reverse bias voltage as well as BiCMOS circuit noise characteristics. From these, we determine the SNR characteristics of the entire OEIC receiver, and finally, the results are verified with bit-error rate measurement.

High performance organic-inorganic perovskite-optocoupler based on low-voltage and fast response perovskite compound photodetector.

PubMed

Li, Dong; Dong, Guifang; Li, Wenzhe; Wang, Liduo

2015-01-20

Organic-inorganic hybrid photodetectors attract considerable attention because they can combine the advantages of both organic and inorganic systems. Here, a perovskite compound with a broad absorption spectrum and high power conversion efficiency is used as a photosensitive layer in an organic/inorganic hybrid heterojunction photodetector with a high and fast response. The high sensitivity exceeding 10(4) is obtained at bias of 0-4 V. Using a tandem organic light-emitting diode (OLED) as the light source, we fabricated an optocoupler device. The optocoupler achieved a maximum photoresponsivity of 1.0 A W(-1) at 341.3 μWcm(-2) at an input voltage of 6 V. The device also exhibits rapid response times of τ(rise) ~ 20 μs and τ(fall) ~ 17 μs; as well as a high current transfer ratio (CTR) of 28.2%. After applying an amplification circuit, the CTR of the optocoupler increases to 263.3%, which is comparable with that of commercial inorganic optocouplers. The developed hybrid optocoupler thus shows great promise for use in photonics.

Fabricating PFPE Membranes for Capillary Electrophoresis

NASA Technical Reports Server (NTRS)

Lee, Michael C.; Willis, Peter A.; Greer, Frank; Rolland, Jason

2009-01-01

A process has been developed for fabricating perfluoropolyether (PFPE) membranes that contain microscopic holes of precise sizes at precise locations. The membranes are to be incorporated into laboratory-on-a-chip microfluidic devices to be used in performing capillary electrophoresis. The present process is a modified version of part of the process, described in the immediately preceding article, that includes a step in which a liquid PFPE layer is cured into solid (membrane) form by use of ultraviolet light. In the present process, one exploits the fact that by masking some locations to prevent exposure to ultraviolet light, one can prevent curing of the PFPE in those locations. The uncured PFPE can be washed away from those locations in the subsequent release and cleaning steps. Thus, holes are formed in the membrane in those locations. The most straightforward way to implement the modification is to use, during the ultraviolet-curing step, an ultraviolet photomask similar to the photomasks used in fabricating microelectronic devices. In lieu of such a photomask, one could use a mask made of any patternable ultraviolet-absorbing material (for example, an ink or a photoresist).

Graphene-on-silicon nitride waveguide photodetector with interdigital contacts

NASA Astrophysics Data System (ADS)

Gao, Yun; Tao, Li; Tsang, Hon Ki; Shu, Chester

2018-05-01

Graphene photodetectors have attracted research attention because of their potential high speed and broad spectral bandwidth. However, their low responsivity and quantum efficiency compared with germanium or III-V material based photodetectors limit their practical use. Here, we demonstrate a chemical vapor deposited graphene photodetector integrated on a silicon nitride waveguide. Interdigital metal contacts are used to reduce the channel spacing down to ˜200 nm. At zero bias, a metal-graphene junction is used for photodetection, which is beneficial for an electro-optic bandwidth of ˜33 GHz in the 1550 nm wavelength band. At a bias of 1 V, a photoconductive responsivity of ˜2.36 A/W at 1550 nm was observed. The high speed and high responsivity make the device promising for photodetection in the telecommunication C-band. A diffusion model is applied to study the carrier transition process in the graphene channel. By adopting this model, the high performance of the device is explained. The main limitation in the responsivity of graphene photodetectors is also analyzed.

Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

DOE PAGES

Zhang, Yingjie; Hellebusch, Daniel J.; Bronstein, Noah D.; ...

2016-06-21

The sensitivity of semiconductor photodetectors is limited by photocarrier recombination during the carrier transport process. We developed a new photoactive material that reduces recombination by physically separating hole and electron charge carriers. This material has a specific detectivity (the ability to detect small signals) of 5 × 10 17 Jones, the highest reported in visible and infrared detectors at room temperature, and 4-5 orders of magnitude higher than that of commercial single-crystal silicon detectors. The material was fabricated by sintering chloride-capped CdTe nanocrystals into polycrystalline films, where Cl selectively segregates into grain boundaries acting as n-type dopants. Photogenerated electrons concentratemore » in and percolate along the grain boundaries - a network of energy valleys, while holes are confined in the grain interiors. This electrostatic field-assisted carrier separation and percolation mechanism enables an unprecedented photoconductive gain of 10 10 e - per photon, and allows for effective control of the device response speed by active carrier quenching.« less

Ultrasensitive photodetectors exploiting electrostatic trapping and percolation transport

PubMed Central

Zhang, Yingjie; Hellebusch, Daniel J.; Bronstein, Noah D.; Ko, Changhyun; Ogletree, D. Frank; Salmeron, Miquel; Alivisatos, A. Paul

2016-01-01

The sensitivity of semiconductor photodetectors is limited by photocarrier recombination during the carrier transport process. We developed a new photoactive material that reduces recombination by physically separating hole and electron charge carriers. This material has a specific detectivity (the ability to detect small signals) of 5 × 1017 Jones, the highest reported in visible and infrared detectors at room temperature, and 4–5 orders of magnitude higher than that of commercial single-crystal silicon detectors. The material was fabricated by sintering chloride-capped CdTe nanocrystals into polycrystalline films, where Cl selectively segregates into grain boundaries acting as n-type dopants. Photogenerated electrons concentrate in and percolate along the grain boundaries—a network of energy valleys, while holes are confined in the grain interiors. This electrostatic field-assisted carrier separation and percolation mechanism enables an unprecedented photoconductive gain of 1010 e− per photon, and allows for effective control of the device response speed by active carrier quenching. PMID:27323904

Ultrafast and sensitive photodetector based on a PtSe2/silicon nanowire array heterojunction with a multiband spectral response from 200 to 1550 nm

NASA Astrophysics Data System (ADS)

Zeng, Longhui; Lin, Shenghuang; Lou, Zhenhua; Yuan, Huiyu; Long, Hui; Li, Yanyong; Lu, Wei; Lau, Shu Ping; Wu, Di; Tsang, Yuen Hong

2018-04-01

The newly discovered Group-10 transition metal dichalcogenides (TMDs) like PtSe2 have promising applications in high-performance microelectronic and optoelectronic devices due to their high carrier mobilities, widely tunable bandages and ultrastabilities. However, the optoelectronic performance of broadband PtSe2 photodetectors integrated with silicon remains undiscovered. Here, we report the successful preparation of large-scale, uniform and vertically grown PtSe2 films by simple selenization method for the design of a PtSe2/Si nanowire array heterostructure, which exhibited a very good photoresponsivity of 12.65 A/W, a high specific detectivity of 2.5 × 1013 Jones at -5 V and fast rise/fall times of 10.1/19.5 μs at 10 kHz without degradation while being capable of responding to high frequencies of up to 120 kHz. Our work has demonstrated the compatibility of PtSe2 with the existing silicon technology and ultrabroad band detection ranging from deep ultraviolet to optical telecommunication wavelengths, which can largely cover the limitations of silicon detectors. Further investigation of the device revealed pronounced photovoltaic behavior at 0 V, making it capable of operating as a self-powered photodetector. Overall, this representative PtSe2/Si nanowire array-based photodetector offers great potential for applications in next-generation optoelectronic and electronic devices.

Optical design of nanowire absorbers for wavelength selective photodetectors

PubMed Central

Mokkapati, S.; Saxena, D.; Tan, H. H.; Jagadish, C.

2015-01-01

We propose the optical design for the absorptive element of photodetectors to achieve wavelength selective photo response based on resonant guided modes supported in semiconductor nanowires. We show that the waveguiding properties of nanowires result in very high absorption efficiency that can be exploited to reduce the volume of active semiconductor compared to planar photodetectors, without compromising the photocurrent. We present a design based on a group of nanowires with varying diameter for multi-color photodetectors with small footprint. We discuss the effect of a dielectric shell around the nanowires on the absorption efficiency and present a simple approach to optimize the nanowire diameter-dielectric shell thickness for maximizing the absorption efficiency. PMID:26469227

High-performing visible-blind photodetectors based on SnO2/CuO nanoheterojunctions

PubMed Central

Xie, Ting; Hasan, Md Rezaul; Qiu, Botong; Arinze, Ebuka S.; Nguyen, Nhan V.; Motayed, Abhishek; Thon, Susanna M.; Debnath, Ratan

2017-01-01

We report on the significant performance enhancement of SnO2 thin film ultraviolet (UV) photodetectors (PDs) through incorporation of CuO/SnO2 p-n nanoscale heterojunctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in ambient to form CuO. We attribute the performance improvements to enhanced UV absorption, demonstrated both experimentally and using optical simulations, and electron transfer facilitated by the nanoheterojunctions. The peak responsivity of the PDs at a bias of 0.2 V improved from 1.9 A/W in a SnO2-only device to 10.3 A/W after CuO deposition. The wavelength-dependent photocurrent-to-dark current ratio was estimated to be ~ 592 for the CuO/SnO2 PD at 290 nm. The morphology, distribution of nanoparticles, and optical properties of the CuO/SnO2 heterostructured thin films are also investigated. PMID:28729741

Low-noise, transformer-coupled resonant photodetector for squeezed state generation

NASA Astrophysics Data System (ADS)

Chen, Chaoyong; Shi, Shaoping; Zheng, Yaohui

2017-10-01

In an actual setup of squeezed state generation, the stability of a squeezing factor is mainly limited by the performance of the servo-control system, which is mainly influenced by the shot noise and gain of a photodetector. We present a unique transformer-coupled LC resonant amplifier as a photodetector circuit to reduce the electronic noise and increase the gain of the photodetector. As a result, we obtain a low-noise, high gain photodetector with the gain of more than 1.8 ×1 05 V/A, and the input current noise of less than 4.7 pA/√{Hz }. By adjusting the parameters of the transformer, the quality factor Q of the resonant circuit is close to 100 in the frequency range of more than 100 MHz, which meets the requirement for weak power detection in the application of squeezed state generation.

Design and Fabrication of Vertically-Integrated CMOS Image Sensors

PubMed Central

Skorka, Orit; Joseph, Dileepan

2011-01-01

Technologies to fabricate integrated circuits (IC) with 3D structures are an emerging trend in IC design. They are based on vertical stacking of active components to form heterogeneous microsystems. Electronic image sensors will benefit from these technologies because they allow increased pixel-level data processing and device optimization. This paper covers general principles in the design of vertically-integrated (VI) CMOS image sensors that are fabricated by flip-chip bonding. These sensors are composed of a CMOS die and a photodetector die. As a specific example, the paper presents a VI-CMOS image sensor that was designed at the University of Alberta, and fabricated with the help of CMC Microsystems and Micralyne Inc. To realize prototypes, CMOS dies with logarithmic active pixels were prepared in a commercial process, and photodetector dies with metal-semiconductor-metal devices were prepared in a custom process using hydrogenated amorphous silicon. The paper also describes a digital camera that was developed to test the prototype. In this camera, scenes captured by the image sensor are read using an FPGA board, and sent in real time to a PC over USB for data processing and display. Experimental results show that the VI-CMOS prototype has a higher dynamic range and a lower dark limit than conventional electronic image sensors. PMID:22163860

Visible-Blind UV Photodetector Based on Single-Walled Carbon Nanotube Thin Film/ZnO Vertical Heterostructures.

PubMed

Li, Guanghui; Suja, Mohammad; Chen, Mingguang; Bekyarova, Elena; Haddon, Robert C; Liu, Jianlin; Itkis, Mikhail E

2017-10-25

Ultraviolet (UV) photodetectors based on heterojunctions of conventional (Ge, Si, and GaAs) and wide bandgap semiconductors have been recently demonstrated, but achieving high UV sensitivity and visible-blind photodetection still remains a challenge. Here, we utilized a semitransparent film of p-type semiconducting single-walled carbon nanotubes (SC-SWNTs) with an energy gap of 0.68 ± 0.07 eV in combination with a molecular beam epitaxy grown n-ZnO layer to build a vertical p-SC-SWNT/n-ZnO heterojunction-based UV photodetector. The resulting device shows a current rectification ratio of 10 3 , a current photoresponsivity up to 400 A/W in the UV spectral range from 370 to 230 nm, and a low dark current. The detector is practically visible-blind with the UV-to-visible photoresponsivity ratio of 10 5 due to extremely short photocarrier lifetimes in the one-dimensional SWNTs because of strong electron-phonon interactions leading to exciton formation. In this vertical configuration, UV radiation penetrates the top semitransparent SC-SWNT layer with low losses (10-20%) and excites photocarriers within the n-ZnO layer in close proximity to the p-SC-SWNT/n-ZnO interface, where electron-hole pairs are efficiently separated by a high built-in electric field associated with the heterojunction.

Polarization-sensitive and broadband germanium sulfide photodetectors with excellent high-temperature performance.

PubMed

Tan, Dezhi; Zhang, Wenjin; Wang, Xiaofan; Koirala, Sandhaya; Miyauchi, Yuhei; Matsuda, Kazunari

2017-08-31

Layered materials, such as graphene, transition metal dichalcogenides and black phosphorene, have been established rapidly as intriguing building blocks for optoelectronic devices. Here, we introduce highly polarization sensitive, broadband, and high-temperature-operation photodetectors based on multilayer germanium sulfide (GeS). The GeS photodetector shows a high photoresponsivity of about 6.8 × 10 3 A W -1 , an extremely high specific detectivity of 5.6 × 10 14 Jones, and broad spectral response in the wavelength range of 300-800 nm. More importantly, the GeS photodetector has high polarization sensitivity to incident linearly polarized light, which provides another degree of freedom for photodetectors. Tremendously enhanced photoresponsivity is observed with a temperature increase, and high responsivity is achievable at least up to 423 K. The establishment of larger photoinduced reduction of the Schottky barrier height will be significant for the investigation of the photoresponse mechanism of 2D layered material-based photodetectors. These attributes of high photocurrent generation in a wide temperature range, broad spectral response, and polarization sensitivity coupled with environmental stability indicate that the proposed GeS photodetector is very suitable for optoelectronic applications.

Novel Ultraviolet Light Absorbing Polymers For Optical Applications

NASA Astrophysics Data System (ADS)

Doddi, Namassivaya; Yamada, Akira; Dunks, Gary B.

1988-07-01

Ultraviolet light absorbing monomers have been developed that can be copolymerized with acrylates. The composition of the resultant stable copolymers can be adjusted to totally block the transmission of light below about 430 nm. Fabrication of lenses from the materials is accomplished by lathe cutting and injection molding procedures. These ultraviolet light absorbing materials are non-mutagenic and non-toxic and are currently being used in intraocular lenses.

Conditions for a carrier multiplication in amorphous-selenium based photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masuzawa, Tomoaki; Kuniyoshi, Shingo; Onishi, Masanori

2013-02-18

Amorphous selenium is a promising candidate for high sensitivity photodetector due to its unique carrier multiplication phenomenon. More than 10 carriers can be generated per incident photon, which leads to high photo-conversion efficiency of 1000% that allows real-time imaging in dark ambient. However, application of this effect has been limited to specific devices due to the lack in material characterization. In this article, mechanism of carrier multiplication has been clarified using time-of-flight secondary ion mass spectroscopy and Raman spectroscopy. A prototype photodetector achieved photo conversion efficiency of 4000%, which explains the signal enhancement mechanism in a-Se based photodetector.

Ultraviolet Polariton Laser

DTIC Science & Technology

2015-09-17

Ultraviolet Polariton Laser Significant progress was achieved in the epitaxy of deep UV AlN/ AlGaN Bragg mirrors and microcavity structures paving...the way to the successful fabrication of vertical cavity emitting laser structures and polariton lasers. For the first time DBRs providing sufficient...high reflectivity for polariton emission were demonstrated. Thanks to a developed strain balanced Al0.85Ga0.15N template, the critical thickness

Bias Selective Operation of Sb-Based Two-Color Photodetectors

NASA Technical Reports Server (NTRS)

Abedin, M. N.; Refaat, Tamer F.; Bhat, Ishwara B.; Xiao, Yegao; Johnson, David G.

2006-01-01

Multicolor detectors have a strong potential to replace conventional single-color detectors in application dealing with the simultaneous detection of more than one wavelength. This will lead to the reduction of heavy and complex optical components now required for spectral discrimination for multi-wavelengths applications. This multicolor technology is simpler, lighter, compact and cheaper with respect to the single-color ones. In this paper, Sb-based two-color detectors fabrication and characterization are presented. The color separation is achieved by fabricating dual band pn junction on a GaSb substrate. The first band consists of an InGaAsSb pn junction for long wavelength detection, while the second band consists of a GaSb pn junction for shorter wavelength detection. Three metal contacts were deposited to access the individual junctions. Surface morphology of multi-layer thin films and also device characteristics of quasi-dual band photodetector were characterized using standard optical microscope and electro-optic techniques respectively. Dark current measurements illustrated the diode behavior of both lattice-matched detector bands. Spectral response measurements indicated either independent operation of both detectors simultaneously, or selective operation of one detector, by the polarity of the bias voltage, while serially accessing both devices.

Photodetectors: Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment (Adv. Mater. 31/2016).

PubMed

Jo, Seo-Hyeon; Park, Hyung-Youl; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Choi, Seunghyuk; Kim, Minwoo; Park, Yongkook; Lee, Jaehyeong; Song, Young Jae; Lee, Sungjoo; Park, Jin-Hong

2016-08-01

The effects of triphenylphosphine (PPh3 ) and (3-amino-propyl)triethoxysilane (APTES) on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by J.-H. Park and co-workers on page 6711 in comparison with a conventional MoS2 device. A very high performance ReSe2 photodetector is demonstrated, which has a broad photodetection range, high photoresponsivity (1.18 × 10(6) A W(-1) ), and fast photoswitching speed (rising/decaying time: 58/263 ms). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Ultra-efficient all-printed organic photodetectors

NASA Astrophysics Data System (ADS)

Kielar, Marcin; Dhez, Olivier; Hirsch, Lionel

2016-09-01

Organic photodetectors are able to transform plastic into intelligent surfaces making our daily life easier, smarter and more productive. The key element for a sensor is to reduce the dark current density in order to boost the limit of detection. The energetic requirements in order to select materials for ultra-high performance organic photodetectors are presented with the following experimental results: a detectivity of 3.36 × 1013 Jones has been achieved with an extremely low dark current density of 0.32 nA cm-2 and a responsivity as high as 0.34 A W-1. Flexible devices are all made at lowtemperature and with solution-processed materials. Their stability under operation is also presented.

Piezo-phototronic effect enhanced UV photodetector based on CuI/ZnO double-shell grown on flexible copper microwire.

PubMed

Liu, Jingyu; Zhang, Yang; Liu, Caihong; Peng, Mingzeng; Yu, Aifang; Kou, Jinzong; Liu, Wei; Zhai, Junyi; Liu, Juan

2016-12-01

In this work, we present a facile, low-cost, and effective approach to fabricate the UV photodetector with a CuI/ZnO double-shell nanostructure which was grown on common copper microwire. The enhanced performances of Cu/CuI/ZnO core/double-shell microwire photodetector resulted from the formation of heterojunction. Benefiting from the piezo-phototronic effect, the presentation of piezocharges can lower the barrier height and facilitate the charge transport across heterojunction. The photosensing abilities of the Cu/CuI/ZnO core/double-shell microwire detector are investigated under different UV light densities and strain conditions. We demonstrate the I-V characteristic of the as-prepared core/double-shell device; it is quite sensitive to applied strain, which indicates that the piezo-phototronic effect plays an essential role in facilitating charge carrier transport across the CuI/ZnO heterojunction, then the performance of the device is further boosted under external strain.

CMOS Image Sensor Using SOI-MOS/Photodiode Composite Photodetector Device

NASA Astrophysics Data System (ADS)

Uryu, Yuko; Asano, Tanemasa

2002-04-01

A new photodetector device composed of a lateral junction photodiode and a metal-oxide-semiconductor field-effect-transistor (MOSFET), in which the output of the diode is fed through the body of the MOSFET, has been investigated. It is shown that the silicon-on-insulator (SOI)-MOSFET amplifies the junction photodiode current due to the lateral bipolar action. It is also shown that the presence of the electrically floating gate enhances the current amplification factor of the SOI-MOSFET. The output current of this composite device linearly responds by four orders of illumination intensity. As an application of the composite device, a complementary-metal-oxide-semiconductor (CMOS) line sensor incorporating the composite device is fabricated and its operation is demonstrated. The output signal of the line sensor using the composite device was two times larger than that using the lateral photodiode.

Novel Structure for High Performance UV Photodetector Based on BiOCl/ZnO Hybrid Film.

PubMed

Teng, Feng; Ouyang, Weixin; Li, Yanmei; Zheng, Lingxia; Fang, Xiaosheng

2017-06-01

A novel type of high performance ultraviolet (UV) photodetector (PD) based on a ZnO film has been prepared by incorporating a BiOCl nanostructure into the film. The responsivity of the BiOCl/ZnO hybrid film PD in UV region can reach 182.87 mA W -1 , which is about 2.72 and 6.87 times for that of TiO 2 /ZnO hybrid film PD and pure ZnO film PD. The rise/decay time of BiOCl/ZnO hybrid film PD is 25.83/11.25 s, which is much shorter than that of TiO 2 /ZnO hybrid film PD (51.94/26.05 s) and pure ZnO film PD (69.34/>120 s). The BiOCl nanostructure can inject photogenerated electrons into the ZnO film under UV light illumination, leading to the increase of photocurrent, and forms barriers to block the straight transmission of electrons between electrodes, resulting in the decrease of decay time. The results of control experiment show that the transfer path of photogenerated electrons formed by p-n junction will be cut off after depositing gold nanoparticles on the film surface, which means this hybrid film is a unique and novel structure to improve the optoelectronic performance of photodetectors. This novel BiOCl/ZnO hybrid structure paves new route for the development of film PDs based on ZnO film. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High performance small molecule photodetector with broad spectral response range from 200 to 900 nm

NASA Astrophysics Data System (ADS)

Wu, Shuang-hong; Li, Wen-lian; Chu, Bei; Su, Zi-sheng; Zhang, Feng; Lee, C. S.

2011-07-01

We demonstrate a photodetector (PD) with broad spectral response by taking the advantages of more flexible device design in using small molecule materials. The optimized device shows an external quantum efficiency of over 20% from 200 to 900 nm. The high performance is achieved by jointing two donor (D)/acceptor (A) hetero-junctions [m-MTDATA(D)/TiOPc(A) and TiOPc(D)/F16CuPc: PTCDI-C8(A)] such that photoresponses over the deep-ultraviolet (UV) and visible-near infrared regions can be independently optimized. By choosing D- and A-materials with matched energy level alignment, high carrier mobility, and balanced carrier transporting properties, the present PD shows a fast response of 56 ns. The high speed and deep-UV sensitivity might lead to potential military applications such as missile tracking in addition to optical communications, chemical/biological sensing etc.

Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays.

PubMed

Marín, A García; Núñez, C García; Rodríguez, P; Shen, G; Kim, S M; Kung, P; Piqueras, J; Pau, J L

2015-03-20

Although nanowires (NWs) may improve the performance of many optoelectronic devices such as light emitters and photodetectors, the mass commercialization of these devices is limited by the difficult task of finding reliable and reproducible methods to integrate the NWs on foreign substrates. This work shows the fabrication of zinc oxide NWs photodetectors on conventional glass using transparent conductive electrodes to effectively integrate the NWs at specific locations by dielectrophoresis (DEP). The paper describes the careful preparation of NW dispersions by sedimentation and the dielectrophoretic alignment of NWs in a home-made system. This system includes an impedance technique for the assessment of the alignment quality in real time. Following this procedure, ultraviolet photodetectors based on the electrical contacts formed by the DEP process on the transparent electrodes are fabricated. This cost-effective mean of contacting NWs enables front-and back-illumination operation modes, the latter eliminating shadowing effects caused by the deposition of metals. The electro-optical characterization of the devices shows uniform responsivities in the order of 106 A W(-1) below 390 nm under both modes, as well as, time responses of a few seconds.

Continuous-flow system and monitoring tools for the dielectrophoretic integration of nanowires in light sensor arrays

NASA Astrophysics Data System (ADS)

García Marín, A.; García Núñez, C.; Rodríguez, P.; Shen, G.; Kim, S. M.; Kung, P.; Piqueras, J.; Pau, J. L.

2015-03-01

Although nanowires (NWs) may improve the performance of many optoelectronic devices such as light emitters and photodetectors, the mass commercialization of these devices is limited by the difficult task of finding reliable and reproducible methods to integrate the NWs on foreign substrates. This work shows the fabrication of zinc oxide NWs photodetectors on conventional glass using transparent conductive electrodes to effectively integrate the NWs at specific locations by dielectrophoresis (DEP). The paper describes the careful preparation of NW dispersions by sedimentation and the dielectrophoretic alignment of NWs in a home-made system. This system includes an impedance technique for the assessment of the alignment quality in real time. Following this procedure, ultraviolet photodetectors based on the electrical contacts formed by the DEP process on the transparent electrodes are fabricated. This cost-effective mean of contacting NWs enables front-and back-illumination operation modes, the latter eliminating shadowing effects caused by the deposition of metals. The electro-optical characterization of the devices shows uniform responsivities in the order of 106 A W-1 below 390 nm under both modes, as well as, time responses of a few seconds.

Air-Inflated Fabric Structures

DTIC Science & Technology

2006-11-05

environmental exposure to ultraviolet rays, moisture, fire, chemicals, etc. Coating such as urethane, PVC (polyvinyl chloride), neoprene, EPDM (ethylene...tests on rubber -coated, plain-woven fabrics and established that the initial shear response was dominated by the coating and with increased shearing...Farboodmanesh, S., Chen, J., Mead, J. L., White, K., "Effect of Construction on Mechanical Behavior of Fabric Reinforced Rubber ," Rubber Division

The mirrors for the Extreme Ultraviolet Explorer

NASA Technical Reports Server (NTRS)

Finley, David S.; Green, James C.; Bowyer, Stuart; Malina, Roger F.

1986-01-01

Flight mirrors for the Extreme Ultraviolet Explorer satellite are currently under fabrication. The grazing incidence metal mirrors are Wolter-Schwarzschild Type I and II and are figured by diamond turning. Imaging performance is excellent, with the figure after polishing for the best mirror being such that the full width-half maximum is 1.0 arc seconds and the half energy width is 8 arc seconds measured at visible wavelengths. Surface finish, as determined from scattering measurements in the extreme ultraviolet, is about 20 A rms.

Contact-eutectic-lens fabrication technique

NASA Technical Reports Server (NTRS)

Allen, F. G.; Yue, A. S.; Yu, J. G.

1975-01-01

Method enables use of crystal or semiconductor materials with selective spectral-response characteristics (ultraviolet, visible, or infrared wavelengths) in fabrication of contact lenses, reading glasses, and photographic processing equipment.

Cryogenic photodetectors

NASA Astrophysics Data System (ADS)

Chardin, G.

2000-03-01

Some of the most significant developments in cryogenic photodetectors are presented. In particular, the main characteristics of microbolometers involving Transition Edge- and NTD-sensors and offering resolutions of a few eV in the keV range, superconducting tunnel junction detectors with resolutions of the order of 10 eV or offering position sensitivity, and infrared bolometers with recent developments towards matrix detectors are discussed. Some of the recent achievements using large mass bolometers for gamma and neutron discriminating detectors, and future prospects of single photon detection in the far infrared using Single Electron Transistor devices are also presented.

Patterning two-dimensional chalcogenide crystals of Bi2Se3 and In2Se3 and efficient photodetectors

PubMed Central

Zheng, Wenshan; Xie, Tian; Zhou, Yu; Chen, Y.L.; Jiang, Wei; Zhao, Shuli; Wu, Jinxiong; Jing, Yumei; Wu, Yue; Chen, Guanchu; Guo, Yunfan; Yin, Jianbo; Huang, Shaoyun; Xu, H.Q.; Liu, Zhongfan; Peng, Hailin

2015-01-01

Patterning of high-quality two-dimensional chalcogenide crystals with unique planar structures and various fascinating electronic properties offers great potential for batch fabrication and integration of electronic and optoelectronic devices. However, it remains a challenge that requires accurate control of the crystallization, thickness, position, orientation and layout. Here we develop a method that combines microintaglio printing with van der Waals epitaxy to efficiently pattern various single-crystal two-dimensional chalcogenides onto transparent insulating mica substrates. Using this approach, we have patterned large-area arrays of two-dimensional single-crystal Bi2Se3 topological insulator with a record high Hall mobility of ∼1,750 cm2 V−1 s−1 at room temperature. Furthermore, our patterned two-dimensional In2Se3 crystal arrays have been integrated and packaged to flexible photodetectors, yielding an ultrahigh external photoresponsivity of ∼1,650 A W−1 at 633 nm. The facile patterning, integration and packaging of high-quality two-dimensional chalcogenide crystals hold promise for innovations of next-generation photodetector arrays, wearable electronics and integrated optoelectronic circuits. PMID:25898022

Nonthermal combined ultraviolet and vacuum-ultraviolet curing process for organosilicate dielectrics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zheng, H.; Guo, X.; Pei, D.

2016-06-13

Porous SiCOH films are of great interest in semiconductor fabrication due to their low-dielectric constant properties. Post-deposition treatments using ultraviolet (UV) light on organosilicate thin films are required to decompose labile pore generators (porogens) and to ensure optimum network formation to improve the electrical and mechanical properties of low-k dielectrics. The goal of this work is to choose the best vacuum-ultraviolet photon energy in conjunction with vacuum ultraviolet (VUV) photons without the need for heating the dielectric to identify those wavelengths that will have the most beneficial effect on improving the dielectric properties and minimizing damage. VUV irradiation between 8.3more » and 8.9 eV was found to increase the hardness and elastic modulus of low-k dielectrics at room temperature. Combined with UV exposures of 6.2 eV, it was found that this “UV/VUV curing” process is improved compared with current UV curing. We show that UV/VUV curing can overcome drawbacks of UV curing and improve the properties of dielectrics more efficiently without the need for high-temperature heating of the dielectric.« less

Thin film filter lifetesting results in the extreme ultraviolet

NASA Technical Reports Server (NTRS)

Vedder, P. W.; Vallerga, J. V.; Gibson, J. L.; Stock, J.; Siegmund, O. H. W.

1993-01-01

We present the results of the thin film filter lifetesting program conducted as part of the NASA Extreme Ultraviolet Explorer (EUVE) satellite mission. This lifetesting program is designed to monitor changes in the transmission and mechanical properties of the EUVE filters over the lifetime of the mission (fabrication, assembly, launch and operation). Witness test filters were fabricated from thin film foils identical to those used in the flight filters. The witness filters have been examined and calibrated periodically over the past seven years. The filters have been examined for evidence of pinholing, mechanical degradation, and oxidation. Absolute transmissions of the flight and witness filters have been measured in the extreme ultraviolet (EUV) over six orders of magnitude at numerous wavelengths using the Berkeley EUV Calibration Facility.

Investigation of high-speed Si photodetectors in standard CMOS technology

NASA Astrophysics Data System (ADS)

Wang, Huaqiang; Guo, Xia

2018-05-01

In this paper, the frequency response characteristics of the photodetector(PD) were studied considering intrinsic and extrinsic effects. Then we designed the interdigitated p-i-n PD on Silicon-on-Insulator (SOI) and epitaxial (EPI) substrates with photosensitive area of 30-μm diameter, fabricated by CMOS process. The 2-μm finger-spacing devices exhibited a 205 MHz bandwidth at a reverse bias of 3 V processed on 2-μm SOI substrates. EPI devices with 1 μm finger spacing exhibited a 131 MHz bandwidth under -3 V. Responsivity of 0.051 A/W and 0.21 A/W were measured at 850 nm on SOI and EPI substrates, respectively. Compared with the bulk silicon PD, the bandwidth is greatly improved. The PD gains the high cost performance ratio, which can be widely used in short distance communication such as visible light communication and free space optical communication.

Fabrication of Highly Ordered Anodic Aluminium Oxide Templates on Silicon Substrates

DTIC Science & Technology

2007-01-01

highly ordered anodic aluminium oxide ( AAO ) templates of unprecedented pore uniformity directly on Si, enabled by new advances on two fronts – direct...field emitter, sensors, oscillators and photodetectors. 15. SUBJECT TERMS Anodic aluminum oxide , template-assisted nanofabrication, carbon nanotube...Fabrication of the aligned and patterned carbon nanotube field emitters using the anodic aluminum oxide nano-template on a Si wafer’, Synth. Met

The lartge-area picosecond photo-detector (LAPPD) project

NASA Astrophysics Data System (ADS)

Varner, Gary

2012-03-01

The technological revolution that replaced the bulky Cathode Ray Tube with a wide variety of thin, reduced-cost display technologies, has yet to be realized for photosensors. Such a low-cost, robust and flexible photon detector, capable of efficient single photon measurement with good spatial and temporal resolution, would have numerous scientific, medical and industrial applications. To address the significant technological challenges of realizing such a disruptive technology, the Large Area Picosecond Photo-Detector (LAPPD) collaboration was formed, and has been strongly supported by the Department of Energy. This group leverages the inter-disciplinary capabilities and facilities at Argonne National Laboratory, the Berkeley Space Sciences Laboratory (SSL), electronics expertise at the Universities of Chicago and Hawaii, and close work with industrial partners to extend the known technologies. Advances in theory-inspired design and in-situ photocathode characterization during growth, Atomic Layer Deposition (ALD) for revolutionizing micro-channel plate fabrication, and compact, wave-form sampling CMOS ASIC readout of micro striplines are key tools toward realizing a viable LAPPD device. Progress toward a first 8" x 8" demonstrator module will be presented.

Characterization and Analysis of a Multicolor Quantum Well Infrared Photodetector

DTIC Science & Technology

2006-06-01

and characterization of performance of a newly designed, multicolor quantum well infrared photodetector ( QWIP ). Specifically, it focuses on a detector...quantum well infrared detectors makes them suitable for use in the field. 15. NUMBER OF PAGES 67 14. SUBJECT TERMS Quantum Well, QWIP , Three...characterization of performance of a newly designed, multicolor quantum well infrared photodetector ( QWIP ). Specifically, it focuses on a detector

Ultrahigh sensitivity and gain white light photodetector based on GaTe/Sn : CdS nanoflake/nanowire heterostructures

NASA Astrophysics Data System (ADS)

Zhou, Weichang; Zhou, Yong; Peng, Yuehua; Zhang, Yong; Yin, Yanling; Tang, Dongsheng

2014-11-01

Optoelectronic diode based on PN heterostructure is one of the most fundamental device building blocks with extensive applications. Here we reported the fabrication and optoelectronic properties of GaTe/Sn : CdS nanoflake/nanowire PN heterojunction photodetectors. With high quality contacts between metal electrodes and Sn : CdS or GaTe, the electrical measurement of GaTe/Sn : CdS hybrid heterojunction under dark condition demonstrates an excellent diode characteristic with well-defined current rectification behavior. The photocurrent increases drastically under LED white light as well as red, green, UV illumination. The on-off ratio of current is about 100 for forward bias and 3000 for reverse bias, which clearly indicates the ultrahigh sensitivity of the heterostructure photodetector to white light. The responsivity and optical gain are determined to be 607 A W-1 and (1.06-2.16) × 105%, which is higher than previous reports of single GaTe or CdS nanostructures. Combination the Ids-Vds curves under different illumination power with energy band diagrams, we assign that both the light modulation effect under forward and reverse bias and the surface molecular oxygen adsorption/desorption mechanism are dominant to the electrical transport behavior of GaTe/Sn : CdS heterojunction. This heterostructure photodetector also shows good stability and fast response speed. Both the high photosensibility and fast response time described in the present study suggest strongly that the GaTe/Sn : CdS hybrid heterostructure is a promising candidate for photodetection, optical sensing and switching devices.

Large bandgap reduced graphene oxide (rGO) based n-p + heterojunction photodetector with improved NIR performance

NASA Astrophysics Data System (ADS)

Singh, Manjri; Kumar, Gaurav; Prakash, Nisha; Khanna, Suraj P.; Pal, Prabir; Singh, Surinder P.

2018-04-01

Integration of two-dimensional reduced graphene oxide (rGO) with conventional Si semiconductor offers novel strategies for realizing broadband photodiode with enhanced device performance. In this quest, we have synthesized large bandgap rGO and fabricated metal-free broadband (300–1100 nm) back-to-back connected np-pn hybrid photodetector utilizing drop casted n-rGO/p +-Si heterojunctions with high performance in NIR region (830 nm). With controlled illumination, the device exhibited a peak responsivity of 16.7 A W‑1 and peak detectivity of 2.56 × 1012 Jones under 830 nm illumination (11 μW cm‑2) at 1 V applied bias with fast response (∼460 μs) and recovery time (∼446 μs). The fabricated device demonstrated excellent repeatability, durability and photoswitching behavior with high external quantum efficiency (∼2.5 × 103%), along with ultrasensitive behavior at low light conditions.

Detectivity enhancement in quantum well infrared photodetectors utilizing a photonic crystal slab resonator.

PubMed

Kalchmair, S; Gansch, R; Ahn, S I; Andrews, A M; Detz, H; Zederbauer, T; Mujagić, E; Reininger, P; Lasser, G; Schrenk, W; Strasser, G

2012-02-27

We characterize the performance of a quantum well infrared photodetector (QWIP), which is fabricated as a photonic crystal slab (PCS) resonator. The strongest resonance of the PCS is designed to coincide with the absorption peak frequency at 7.6 µm of the QWIP. To accurately characterize the detector performance, it is illuminated by using single mode mid-infrared lasers. The strong resonant absorption enhancement yields a detectivity increase of up to 20 times. This enhancement is a combined effect of increased responsivity and noise current reduction. With increasing temperature, we observe a red shift of the PCS-QWIP resonance peak of -0.055 cm(-1)/K. We attribute this effect to a refractive index change and present a model based on the revised plane wave method.

Semiconductor superlattice photodetectors

NASA Technical Reports Server (NTRS)

Chuang, S. L.; Hess, K.; Coleman, J. J.; Leburton, J. P.

1984-01-01

A superlattice photomultiplier and a photodetector based on the real space transfer mechanism were studied. The wavelength for the first device is of the order of a micron or flexible corresponding to the bandgap absorption in a semiconductor. The wavelength for the second device is in the micron range (about 2 to 12 microns) corresponding to the energy of the conduction band edge discontinuity between an Al/(sub x)Ga(sub 1-x)As and GaAs interface. Both devices are described.

Focal-Plane Arrays of Quantum-Dot Infrared Photodetectors

NASA Technical Reports Server (NTRS)

Gunapala, Sarath; Wilson, Daniel; Hill, Cory; Liu, John; Bandara, Sumith; Ting, David

2007-01-01

Focal-plane arrays of semiconductor quantum-dot infrared photodetectors (QDIPs) are being developed as superior alternatives to prior infrared imagers, including imagers based on HgCdTe devices and, especially, those based on quantum-well infrared photodetectors (QWIPs). HgCdTe devices and arrays thereof are difficult to fabricate and operate, and they exhibit large nonunformities and high 1/f (where f signifies frequency) noise. QWIPs are easier to fabricate and operate, can be made nearly uniform, and exhibit lower 1/f noise, but they exhibit larger dark currents, and their quantization only along the growth direction prevents them from absorbing photons at normal incidence, thereby limiting their quantum efficiencies. Like QWIPs, QDIPs offer the advantages of greater ease of operation, greater uniformity, and lower 1/f noise, but without the disadvantages: QDIPs exhibit lower dark currents, and quantum efficiencies of QDIPs are greater because the three-dimensional quantization of QDIPs is favorable to the absorption of photons at normal or oblique incidence. Moreover, QDIPs can be operated at higher temperatures (around 200 K) than are required for operation of QWIPs. The main problem in the development of QDIP imagers is to fabricate quantum dots with the requisite uniformity of size and spacing. A promising approach to be tested soon involves the use of electron-beam lithography to define the locations and sizes of quantum dots. A photoresist-covered GaAs substrate would be exposed to the beam generated by an advanced, high-precision electron beam apparatus. The exposure pattern would consist of spots typically having a diameter of 4 nm and typically spaced 20 nm apart. The exposed photoresist would be developed by either a high-contrast or a low-contrast method. In the high-contrast method, the spots would be etched in such a way as to form steep-wall holes all the way down to the substrate. The holes would be wider than the electron beam spots perhaps as

High-performing visible-blind photodetectors based on SnO{sub 2}/CuO nanoheterojunctions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xie, Ting, E-mail: ting.xie@nist.gov; Department of Electrical and Computer Engineering, University of Maryland, College Park, Maryland 20742; Hasan, Md Rezaul

2015-12-14

We report on the significant performance enhancement of SnO{sub 2} thin film ultraviolet (UV) photodetectors (PDs) through incorporation of CuO/SnO{sub 2} p-n nanoscale heterojunctions. The nanoheterojunctions are self-assembled by sputtering Cu clusters that oxidize in ambient to form CuO. We attribute the performance improvements to enhanced UV absorption, demonstrated both experimentally and using optical simulations, and electron transfer facilitated by the nanoheterojunctions. The peak responsivity of the PDs at a bias of 0.2 V improved from 1.9 A/W in a SnO{sub 2}-only device to 10.3 A/W after CuO deposition. The wavelength-dependent photocurrent-to-dark current ratio was estimated to be ∼592 for the CuO/SnO{sub 2}more » PD at 290 nm. The morphology, distribution of nanoparticles, and optical properties of the CuO/SnO{sub 2} heterostructured thin films are also investigated.« less

Fabrication technology

NASA Astrophysics Data System (ADS)

1988-05-01

Many laboratory programs continue to need optical components of ever-increasing size and accuracy. Unfortunately, optical surfaces produced by the conventional sequence of grinding, lapping, and polishing can become prohibitively expensive. Research in the Fabrication Technology area focuses on methods of fabricating components with heretofore unrealized levels of precision. In FY87, researchers worked to determine the fundamental mechanical limits of material removal, experimented with unique material removal and deposition processes, developed servo systems for controlling the geometric position of ultraprecise machine tools, and advanced the ability to precisely measure contoured workpieces. Continued work in these areas will lead to more cost-effective processes to fabricate even higher quality optical components for advanced lasers and for visible, ultraviolet, and X-ray diagnostic systems.

Nanoscale resonant-cavity-enhanced germanium photodetectors with lithographically defined spectral response for improved performance at telecommunications wavelengths.

PubMed

Balram, Krishna C; Audet, Ross M; Miller, David A B

2013-04-22

We demonstrate the use of a subwavelength planar metal-dielectric resonant cavity to enhance the absorption of germanium photodetectors at wavelengths beyond the material's direct absorption edge, enabling high responsivity across the entire telecommunications C and L bands. The resonant wavelength of the detectors can be tuned linearly by varying the width of the Ge fin, allowing multiple detectors, each resonant at a different wavelength, to be fabricated in a single-step process. This approach is promising for the development of CMOS-compatible devices suitable for integrated, high-speed, and energy-efficient photodetection at telecommunications wavelengths.

High-Performance Organic Photodetectors from a High-Bandgap Indacenodithiophene-Based π-Conjugated Donor-Acceptor Polymer.

PubMed

Benavides, Cindy Montenegro; Murto, Petri; Chochos, Christos L; Gregoriou, Vasilis G; Avgeropoulos, Apostolos; Xu, Xiaofeng; Bini, Kim; Sharma, Anirudh; Andersson, Mats R; Schmidt, Oliver; Brabec, Christoph J; Wang, Ergang; Tedde, Sandro F

2018-04-18

A conjugated donor-acceptor polymer, poly[4,4,9,9-tetrakis(4-hexylphenyl)-4,9-dihydro- s-indaceno[1,2- b:5,6- b']dithiophene-2,7-diyl- alt-5-(2-ethylhexyl)-4 H-thieno[3,4- c]pyrrole-4,6(5 H)-dione-1,3-diyl] (PIDT-TPD), is blended with the fullerene derivative [6,6]phenyl-C61-butyric acid methyl ester (PC 61 BM) for the fabrication of thin and solution-processed organic photodetectors (OPDs). Systematic screening of the concentration ratio of the blend and the molecular weight of the polymer is performed to optimize the active layer morphology and the OPD performance. The device comprising a medium molecular weight polymer (27.0 kg/mol) in a PIDT-TPD:PC 61 BM 1:1 ratio exhibits an external quantum efficiency of 52% at 610 nm, a dark current density of 1 nA/cm 2 , a detectivity of 1.44 × 10 13 Jones, and a maximum 3 dB cutoff frequency of 100 kHz at -5 V bias. These results are remarkable among the state-of-the-art red photodetectors based on conjugated polymers. As such, this work presents a functional organic active material for high-speed OPDs with a linear photoresponse at different light intensities.

ZnO nanorod arrays and direct wire bonding on GaN surfaces for rapid fabrication of antireflective, high-temperature ultraviolet sensors

NASA Astrophysics Data System (ADS)

So, Hongyun; Senesky, Debbie G.

2016-11-01

Rapid, cost-effective, and simple fabrication/packaging of microscale gallium nitride (GaN) ultraviolet (UV) sensors are demonstrated using zinc oxide nanorod arrays (ZnO NRAs) as an antireflective layer and direct bonding of aluminum wires to the GaN surface. The presence of the ZnO NRAs on the GaN surface significantly reduced the reflectance to less than 1% in the UV and 4% in the visible light region. As a result, the devices fabricated with ZnO NRAs and mechanically stable aluminum bonding wires (pull strength of 3-5 gf) showed higher sensitivity (136.3% at room temperature and 148.2% increase at 250 °C) when compared with devices with bare (uncoated) GaN surfaces. In addition, the devices demonstrated reliable operation at high temperatures up to 300 °C, supporting the feasibility of simple and cost-effective UV sensors operating with higher sensitivity in high-temperature conditions, such as in combustion, downhole, and space exploration applications.

Progress in Infrared Photodetectors Since 2000

PubMed Central

Downs, Chandler; Vandervelde, Thomas E.

2013-01-01

The first decade of the 21st-century has seen a rapid development in infrared photodetector technology. At the end of the last millennium there were two dominant IR systems, InSb- and HgCdTe-based detectors, which were well developed and available in commercial systems. While these two systems saw improvements over the last twelve years, their change has not nearly been as marked as that of the quantum-based detectors (i.e., QWIPs, QDIPs, DWELL-IPs, and SLS-based photodetectors). In this paper, we review the progress made in all of these systems over the last decade plus, compare the relative merits of the systems as they stand now, and discuss where some of the leading research groups in these fields are going to take these technologies in the years to come. PMID:23591965

Single-layer graphene/titanium oxide cubic nanorods array/FTO heterojunction for sensitive ultraviolet light detection

NASA Astrophysics Data System (ADS)

Liang, Feng-Xia; Wang, Jiu-Zhen; Wang, Yi; Lin, Yi; Liang, Lin; Gao, Yang; Luo, Lin-Bao

2017-12-01

In this study, we report on the fabrication of a sensitive ultraviolet photodetector (UVPD) by simply transferring single-layer graphene (SLG) on rutile titanium oxide cubic nanorod (TiO2NRs) array. The cubic TiO2NRs array with strong light trapping effect was grown on fluorine-doped tin oxide (FTO) glass through a hydrothermal approach. The as-assembled UVPD was very sensitive to UV light illumination, but virtually blind to white light illumination. The responsivity and specific detectivity were estimated to be 52.1 A/W and 4.3 × 1012 Jones, respectively. What is more, in order to optimize device performance of UVPD, a wet-chemistry treatment was then employed to reduce the high concentration of defects in TiO2NRs during hydrothermal growth. It was found that the UVPD after treatment showed obvious decrease in sensitivity, but the response speed (rise time: 80 ms, fall time: 160 ms) and specific detectivity were substantially increased. It is also found that the speicific detectivity was imporoved by six-fold to 3.2 × 1013 Jones, which was the best result in comparison with previously reported TiO2 nanostructures or thin film based UVPDs. This totality of this study shows that the present SLG/TiO2NR/FTO UVPD may find potential application in future optoelectronic devices and systems.

Low temperature growth of heavy boron-doped hydrogenated Ge epilayers and its application in Ge/Si photodetectors

NASA Astrophysics Data System (ADS)

Kuo, Wei-Cheng; Lee, Ming Jay; Wu, Mount-Learn; Lee, Chien-Chieh; Tsao, I.-Yu; Chang, Jenq-Yang

2017-04-01

In this study, heavily boron-doped hydrogenated Ge epilayers are grown on Si substrates at a low growth temperature (220 °C). The quality of the boron-doped epilayers is dependent on the hydrogen flow rate. The optical emission spectroscopic, X-ray diffraction and Hall measurement results demonstrate that better quality boron-doped Ge epilayers can be obtained at low hydrogen flow rates (0 sccm). This reduction in quality is due to an excess of hydrogen in the source gas, which breaks one of the Ge-Ge bonds on the Ge surface, leading to the formation of unnecessary dangling bonds. The structure of the boron doped Ge epilayers is analyzed by transmission electron microscopy and atomic force microscopy. In addition, the performance, based on the I-V characteristics, of Ge/Si photodetectors fabricated with boron doped Ge epilayers produced under different hydrogen flow rates was examined. The photodetectors with boron doped Ge epilayers produced with a low hydrogen flow rate (0 sccm) exhibited a higher responsivity of 0.144 A/W and a lower dark current of 5.33 × 10-7 A at a reverse bias of 1 V.

15-micro-m 128 x 128 GaAs/Al(x)Ga(1-x) As Quantum Well Infrared Photodetector Focal Plane Array Camera

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Park, Jin S.; Sarusi, Gabby; Lin, True-Lon; Liu, John K.; Maker, Paul D.; Muller, Richard E.; Shott, Craig A.; Hoelter, Ted

1997-01-01

In this paper, we discuss the development of very sensitive, very long wavelength infrared GaAs/Al(x)Ga(1-x)As quantum well infrared photodetectors (QWIP's) based on bound-to-quasi-bound intersubband transition, fabrication of random reflectors for efficient light coupling, and the demonstration of a 15 micro-m cutoff 128 x 128 focal plane array imaging camera. Excellent imagery, with a noise equivalent differential temperature (N E(delta T)) of 30 mK has been achieved.

Photovoltaic-Pyroelectric Coupled Effect Induced Electricity for Self-Powered Photodetector System.

PubMed

Ma, Nan; Zhang, Kewei; Yang, Ya

2017-12-01

Ferroelectric materials have demonstrated novel photovoltaic effect to scavenge solar energy. However, most of the ferroelectric materials with wide bandgaps (2.7-4 eV) suffer from low power conversion efficiency of less than 0.5% due to absorbing only 8-20% of solar spectrum. Instead of harvesting solar energy, these ferroelectric materials can be well suited for photodetector applications, especially for sensing near-UV irradiations. Here, a ferroelectric BaTiO 3 film-based photodetector is demonstrated that can be operated without using any external power source and a fast sensing of 405 nm light illumination is enabled. As compared with photovoltaic effect, both the responsivity and the specific detectivity of the photodetector can be dramatically enhanced by larger than 260% due to the light-induced photovoltaic-pyroelectric coupled effect. A self-powered photodetector array system can be utilized to achieve spatially resolved light intensity detection by recording the output voltage signals as a mapping figure. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Stabilized Alkali-Metal Ultraviolet-Band-Pass Filters

NASA Technical Reports Server (NTRS)

Mardesich, Nick; Fraschetti, George A.; Mccann, Timothy; Mayall, Sherwood D.; Dunn, Donald E.; Trauger, John T.

1995-01-01

Layers of bismuth 5 to 10 angstrom thick incorporated into alkali-metal ultraviolet-band-pass optical filters by use of advanced fabrication techniques. In new filters layer of bismuth helps to reduce surface migration of sodium. Sodium layer made more stable and decreased tendency to form pinholes by migration.

Polymer waveguide grating sensor integrated with a thin-film photodetector

PubMed Central

Song, Fuchuan; Xiao, Jing; Xie, Antonio Jou; Seo, Sang-Woo

2014-01-01

This paper presents a planar waveguide grating sensor integrated with a photodetector (PD) for on-chip optical sensing systems which are suitable for diagnostics in the field and in-situ measurements. III–V semiconductor-based thin-film PD is integrated with a polymer based waveguide grating device on a silicon platform. The fabricated optical sensor successfully discriminates optical spectral characteristics of the polymer waveguide grating from the on-chip PD. In addition, its potential use as a refractive index sensor is demonstrated. Based on a planar waveguide structure, the demonstrated sensor chip may incorporate multiple grating waveguide sensing regions with their own optical detection PDs. In addition, the demonstrated processing is based on a post-integration process which is compatible with silicon complementary metal-oxide semiconductor (CMOS) electronics. Potentially, this leads a compact, chip-scale optical sensing system which can monitor multiple physical parameters simultaneously without need for external signal processing. PMID:24466407

Multifunctional optical correlator for picosecond ultraviolet laser pulse measurement

DOE PAGES

Rakhman, Abdurahim; Wang, Yang; Garcia, Frances; ...

2014-01-01

A compact optical correlator system that measures both the autocorrelation between two infrared (IR) lights and the cross-correlation between an IR and an ultraviolet (UV) light using a single nonlinear optical crystal has been designed and experimentally demonstrated. The rapid scanning of optical delay line, switching between auto and cross-correlations, crystal angle tuning, and data acquisition and processing are all computer controlled. Pulse widths of an IR light from a mode-locked laser are measured by the correlator and the results are compared with a direct measurement using a high-speed photodetector system. The correlator has been used to study the parametermore » dependence of the pulse width of a macropulse UV laser designed for laser-assisted hydrogen ion (H-) beam stripping for the Spallation Neutron Source at Oak Ridge National Laboratory.« less

Long-wavelength photonic integrated circuits and avalanche photodetectors

NASA Astrophysics Data System (ADS)

Tsou, Yi-Jen D.; Zaytsev, Sergey; Pauchard, Alexandre; Hummel, Steve; Lo, Yu-Hwa

2001-10-01

Fast-growing internet traffic volume require high data communication bandwidth over longer distances. Access network bottlenecks put pressure on short-range (SR) telecommunication systems. To effectively address these datacom and telecom market needs, low-cost, high-speed laser modules at 1310 to 1550 nm wavelengths and avalanche photodetectors are required. The great success of GaAs 850nm VCSEls for Gb/s Ethernet has motivated efforts to extend VCSEL technology to longer wavelengths in the 1310 and 1550 nm regimes. However, the technological challenges associated with materials for long wavelength VCSELs are tremendous. Even with recent advances in this area, it is believed that significant additional development is necessary before long wavelength VCSELs that meet commercial specifications will be widely available. In addition, the more stringent OC192 and OC768 specifications for single-mode fiber (SMF) datacom may require more than just a long wavelength laser diode, VCSEL or not, to address numerous cost and performance issues. We believe that photonic integrated circuits (PICs), which compactly integrate surface-emitting lasers with additional active and passive optical components with extended functionality, will provide the best solutions to today's problems. Photonic integrated circuits have been investigated for more than a decade. However, they have produced limited commercial impact to date primarily because the highly complicated fabrication processes produce significant yield and device performance issues. In this presentation, we will discuss a new technology platform of InP-based PICs compatible with surface-emitting laser technology, as well as a high data rate externally modulated laser module. Avalanche photodetectors (APDs) are the key component in the receiver to achieve high data rate over long transmission distance because of their high sensitivity and large gain- bandwidth product. We have used wafer fusion technology to achieve In

A novel biasing dependent circuit model of resonant cavity enhanced avalanche photodetectors (RCE-APDs)

NASA Astrophysics Data System (ADS)

Abdelhamid, Mostafa R.; El-Batawy, Yasser M.; Deen, M. Jamal

2018-02-01

In Resonant Cavity Enhanced Photodetectors (RCE-PDs), the trade-off between the bandwidth and the quantum efficiency in the conventional photodetectors is overcome. In RCE-PDs, large bandwidth can be achieved using a thin absorption layer while the use of a resonant cavity allows for multiple passes of light in the absorption which boosts the quantum efficiency. In this paper, a complete bias-dependent model for the Resonant Cavity Enhanced-Separated Absorption Graded Charge Multiplication-Avalanche Photodetector (RCE-SAGCM-APD) is presented. The proposed model takes into account the case of drift velocities other than the saturation velocity, thus modeling this effect on the photodetector different design parameters such as Gain, Bandwidth and Gain-Bandwidth product.

Photo-detectors for time of flight positron emission tomography (ToF-PET).

PubMed

Spanoudaki, Virginia Ch; Levin, Craig S

2010-01-01

We present the most recent advances in photo-detector design employed in time of flight positron emission tomography (ToF-PET). PET is a molecular imaging modality that collects pairs of coincident (temporally correlated) annihilation photons emitted from the patient body. The annihilation photon detector typically comprises a scintillation crystal coupled to a fast photo-detector. ToF information provides better localization of the annihilation event along the line formed by each detector pair, resulting in an overall improvement in signal to noise ratio (SNR) of the reconstructed image. Apart from the demand for high luminosity and fast decay time of the scintillation crystal, proper design and selection of the photo-detector and methods for arrival time pick-off are a prerequisite for achieving excellent time resolution required for ToF-PET. We review the two types of photo-detectors used in ToF-PET: photomultiplier tubes (PMTs) and silicon photo-multipliers (SiPMs) with a special focus on SiPMs.

Photo-Detectors for Time of Flight Positron Emission Tomography (ToF-PET)

PubMed Central

Spanoudaki, Virginia Ch.; Levin⋆, Craig S.

2010-01-01

We present the most recent advances in photo-detector design employed in time of flight positron emission tomography (ToF-PET). PET is a molecular imaging modality that collects pairs of coincident (temporally correlated) annihilation photons emitted from the patient body. The annihilation photon detector typically comprises a scintillation crystal coupled to a fast photo-detector. ToF information provides better localization of the annihilation event along the line formed by each detector pair, resulting in an overall improvement in signal to noise ratio (SNR) of the reconstructed image. Apart from the demand for high luminosity and fast decay time of the scintillation crystal, proper design and selection of the photo-detector and methods for arrival time pick-off are a prerequisite for achieving excellent time resolution required for ToF-PET. We review the two types of photo-detectors used in ToF-PET: photomultiplier tubes (PMTs) and silicon photo-multipliers (SiPMs) with a special focus on SiPMs. PMID:22163482

Submonolayer Quantum Dot Infrared Photodetector

NASA Technical Reports Server (NTRS)

Ting, David Z.; Bandara, Sumith V.; Gunapala, Sarath D.; Chang, Yia-Chang

2010-01-01

A method has been developed for inserting submonolayer (SML) quantum dots (QDs) or SML QD stacks, instead of conventional Stranski-Krastanov (S-K) QDs, into the active region of intersubband photodetectors. A typical configuration would be InAs SML QDs embedded in thin layers of GaAs, surrounded by AlGaAs barriers. Here, the GaAs and the AlGaAs have nearly the same lattice constant, while InAs has a larger lattice constant. In QD infrared photodetector, the important quantization directions are in the plane perpendicular to the normal incidence radiation. In-plane quantization is what enables the absorption of normal incidence radiation. The height of the S-K QD controls the positions of the quantized energy levels, but is not critically important to the desired normal incidence absorption properties. The SML QD or SML QD stack configurations give more control of the structure grown, retains normal incidence absorption properties, and decreases the strain build-up to allow thicker active layers for higher quantum efficiency.

Avalanche multiplication in AlGaN-based heterostructures for the ultraviolet spectral range

NASA Astrophysics Data System (ADS)

Hahn, L.; Fuchs, F.; Kirste, L.; Driad, R.; Rutz, F.; Passow, T.; Köhler, K.; Rehm, R.; Ambacher, O.

2018-04-01

AlxGa1-xN based avalanche photodiodes grown on sapphire substrate with Al-contents of x = 0.65 and x = 0.60 have been examined under back- and frontside illumination with respect to their avalanche gain properties. The photodetectors suitable for the solar-blind ultraviolet spectral regime show avalanche gain for voltages in excess of 30 V reverse bias in the linear gain mode. Devices with a mesa diameter of 100 μm exhibit stable avalanche gain below the break through threshold voltage, exceeding a multiplication gain of 5500 at 84 V reverse bias. A dark current below 1 pA can be found for reverse voltages up to 60 V.

Enhanced ultraviolet photoconductivity in porous GaN prepared by metal-assisted electroless etching

NASA Astrophysics Data System (ADS)

Guo, X. Y.; Williamson, T. L.; Bohn, P. W.

2006-10-01

The ultraviolet photoconductivity of porous GaN (PGaN) produced by Pt-assisted electroless etching has been investigated. The photoresponse of PGaN prepared from highly doped GaN ( n>1018 cm) shows enhanced ( 15×) magnitude and faster decay of persistent photoconductivity relative to bulk crystalline (CGaN), suggesting advantages for PGaN in photodetector applications. A space charge model for changes in photoconductivity is used to explain these observations. Heightened defect density in the etched material plays an important role in the enhanced photoconductivity in PGaN. Flux-dependent optical quenching (OQ) behavior, linked to the presence of metastable states, is also observed in PGaN as in CGaN.

Quantum state engineering with ultra-short-period (AlN)m/(GaN)n superlattices for narrowband deep-ultraviolet detection.

PubMed

Gao, Na; Lin, Wei; Chen, Xue; Huang, Kai; Li, Shuping; Li, Jinchai; Chen, Hangyang; Yang, Xu; Ji, Li; Yu, Edward T; Kang, Junyong

2014-12-21

Ultra-short-period (AlN)m/(GaN)n superlattices with tunable well and barrier atomic layer numbers were grown by metal-organic vapour phase epitaxy, and employed to demonstrate narrowband deep ultraviolet photodetection. High-resolution transmission electron microscopy and X-ray reciprocal space mapping confirm that superlattices containing well-defined, coherently strained GaN and AlN layers as thin as two atomic layers (∼ 0.5 nm) were grown. Theoretical and experimental results demonstrate that an optical absorption band as narrow as 9 nm (210 meV) at deep-ultraviolet wavelengths can be produced, and is attributable to interband transitions between quantum states along the [0001] direction in ultrathin GaN atomic layers isolated by AlN barriers. The absorption wavelength can be precisely engineered by adjusting the thickness of the GaN atomic layers because of the quantum confinement effect. These results represent a major advance towards the realization of wavelength selectable and narrowband photodetectors in the deep-ultraviolet region without any additional optical filters.

Single-crystalline germanium nanomembrane photodetectors on foreign nanocavities

DOE PAGES

Xia, Zhenyang; Song, Haomin; Kim, Munho; ...

2017-07-07

Miniaturization of optoelectronic devices offers tremendous performance gain. As the volume of photoactive material decreases, optoelectronic performance improves, including the operation speed, the signal-to-noise ratio, and the internal quantum efficiency. Over the past decades, researchers have managed to reduce the volume of photoactive materials in solar cells and photodetectors by orders of magnitude. However, two issues arise when one continues to thin down the photoactive layers to the nanometer scale (for example, <50 nm). First, light-matter interaction becomes weak, resulting in incomplete photon absorption and low quantum efficiency. Second, it is difficult to obtain ultrathin materials with single-crystalline quality. Wemore » introduce a method to overcome these two challenges simultaneously. It uses conventional bulk semiconductor wafers, such as Si, Ge, and GaAs, to realize single-crystalline films on foreign substrates that are designed for enhanced light-matter interaction. We use a high-yield and high-throughput method to demonstrate nanometer-thin photodetectors with significantly enhanced light absorption based on nanocavity interference mechanism. As a result, these single-crystalline nanomembrane photodetectors also exhibit unique optoelectronic properties, such as the strong field effect and spectral selectivity.« less

Zero-bias 40Gbit/s germanium waveguide photodetector on silicon.

PubMed

Vivien, Laurent; Polzer, Andreas; Marris-Morini, Delphine; Osmond, Johann; Hartmann, Jean Michel; Crozat, Paul; Cassan, Eric; Kopp, Christophe; Zimmermann, Horst; Fédéli, Jean Marc

2012-01-16

We report on lateral pin germanium photodetectors selectively grown at the end of silicon waveguides. A very high optical bandwidth, estimated up to 120GHz, was evidenced in 10 µm long Ge photodetectors using three kinds of experimental set-ups. In addition, a responsivity of 0.8 A/W at 1550 nm was measured. An open eye diagrams at 40Gb/s were demonstrated under zero-bias at a wavelength of 1.55 µm.

History of HgTe-based photodetectors in Poland

NASA Astrophysics Data System (ADS)

Rogalski, A.

2010-09-01

In Poland, the HgCdTe studies began in 1960 at the Institute of Physics, Warsaw University. The material processing laboratory was created by Giriat and later by Dziuba, Gałązka, and others. Bridgman technique with sealed thick wall quartz ampoules was used to grow material suitable for research and experimental devices. Among the first papers published in 1961 and 1963 there were the Polish works devoted to preparation, doping, and electrical properties of HgCdTe. Infrared detector's research and development efforts in Poland were concentrated mostly on uncooled market niche. At the beginning, a modified isothermal vapour phase epitaxy has been used for research and commercial fabrication of photoconductive, photoelectromagnetic and other HgCdTe devices. Bulk growth and liquid phase epitaxy were also used. Recently, the fabrication of infrared devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition. At present stage of development, the photoconductive and photoelectromagnetic (PEM) detectors are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, photodiodes offer high performance and very fast response. However, conventional photovoltaic uncooled detectors suffer from low quantum efficiency and very low junction resistance. The problems have been solved with advanced band gap engineered architecture, multiple cell heterojunction devices connected in series, and monolithic integration of the detectors with microoptics. In final part of the paper, the Polish achievements in technology and performance of HgMnTe and HgZnTe photodetectors are presented.

Periodically structured Si pillars for high-performing heterojunction photodetectors

NASA Astrophysics Data System (ADS)

Melvin David Kumar, M.; Yun, Ju-Hyung; Kim, Joondong

2015-03-01

A periodical array of silicon (Si) micro pillar structures was fabricated on Si substrates using PR etching process. Indium tin oxide (ITO) layer of 80 nm thickness was deposited over patterned Si substrates so as to make ITO/n-Si heterojunction devices. The influences of width and period of pillars on the optical and electrical properties of prepared devices were investigated. The surface morphology of the Si substrates revealed the uniform array of pillar structures. The 5/10 (width/period) Si pillar pattern reduced the optical reflectance to 6.5% from 17% which is of 5/7 pillar pattern. The current rectifying ratio was found higher for the device in which the pillars are situated in optimum periods. At both visible (600 nm) and near infrared (900 nm) range of wavelengths, the 5/7 and 5/10 pillar patterned device exhibited the better photoresponses which are suitable for making advanced photodetectors. This highly transmittance and photoresponsive pillar patterned Si substrates with an ITO layer would be a promising device for various photoelectric applications.

Pilot Production of Large Area Microchannel Plates and Picosecond Photodetectors

NASA Astrophysics Data System (ADS)

Minot, M.; Adams, B.; Abiles, M.; Bond, J.; Craven, C.; Cremer, T.; Foley, M.; Lyashenko, A.; Popecki, M.; Stochaj, M.; Worstell, W.; Elam, J.; Mane, A.; Siegmund, O.; Ertley, C.

2016-09-01

Pilot production performance is reported for large area atomic layer deposition (ALD) coated microchannel plates (ALD-GCA-MCPs) and for Large Area Picosecond Photodetectors (LAPPD™) which incorporate them. "Hollowcore" glass capillary array (GCA) substrates are coated with ALD resistive and emissive layers to form the ALDGCA- MCPs, an approach that facilitates independent selection of glass substrates that are mechanically stronger and that have lower levels of radioactive alkali elements compared to conventional MCP lead glass, reducing background noise[1,2,3,4]. ALD-GCA-MCPs have competitive gain ( 104 each or 107 for a chevron pair ), enhanced lifetime and gain stability (7 C cm-2 of charge extraction), reduced background levels (0.028 events cm-2 sec-1) and low gamma-ray detection efficiency. They can be fabricated in large area (20cm X 20 cm) planar and curved formats suitable for use in high radiation environment applications, including astronomy, space instrumentation, and remote night time sensing. The LAPPD™ photodetector incorporates these ALD-GCA-MCPs in an all-glass hermetic package with top and bottom plates and sidewalls made of borosilicate float glass. Signals are generated by a bi-alkali Na2KSb photocathode, amplified with a stacked chevron pair of ALD-GCA-MCPs. Signals are collected on RF strip-line anodes integrated into to the bottom plates which exit the detector via pin-free hermetic seals under the side walls [5]. Tests show that LAPPDTMs have electron gains greater than 107, submillimeter spatial resolution for large (multiphoton) pulses and several mm for single photons, time resolution less than 50 picoseconds for single photons, predicted resolution less than 5 picoseconds for large pulses, high stability versus charge extraction[6], and good uniformity for applications including astrophysics, neutron detection, high energy physics Cherenkov light detection, and quantum-optical photon-correlation experiments.

Enhanced light absorption of solar cells and photodetectors by diffraction

DOEpatents

Zaidi, Saleem H.; Gee, James M.

2005-02-22

Enhanced light absorption of solar cells and photodetectors by diffraction is described. Triangular, rectangular, and blazed subwavelength periodic structures are shown to improve performance of solar cells. Surface reflection can be tailored for either broadband, or narrow-band spectral absorption. Enhanced absorption is achieved by efficient optical coupling into obliquely propagating transmitted diffraction orders. Subwavelength one-dimensional structures are designed for polarization-dependent, wavelength-selective absorption in solar cells and photodetectors, while two-dimensional structures are designed for polarization-independent, wavelength-selective absorption therein. Suitable one and two-dimensional subwavelength periodic structures can also be designed for broadband spectral absorption in solar cells and photodetectors. If reactive ion etching (RIE) processes are used to form the grating, RIE-induced surface damage in subwavelength structures can be repaired by forming junctions using ion implantation methods. RIE-induced surface damage can also be removed by post RIE wet-chemical etching treatments.

Piezo-phototronic Effect Enhanced UV/Visible Photodetector Based on Fully Wide Band Gap Type-II ZnO/ZnS Core/Shell Nanowire Array.

PubMed

Rai, Satish C; Wang, Kai; Ding, Yong; Marmon, Jason K; Bhatt, Manish; Zhang, Yong; Zhou, Weilie; Wang, Zhong Lin

2015-06-23

A high-performance broad band UV/visible photodetector has been successfully fabricated on a fully wide bandgap ZnO/ZnS type-II heterojunction core/shell nanowire array. The device can detect photons with energies significantly smaller (2.2 eV) than the band gap of ZnO (3.2 eV) and ZnS (3.7 eV), which is mainly attributed to spatially indirect type-II transition facilitated by the abrupt interface between the ZnO core and ZnS shell. The performance of the device was further enhanced through the piezo-phototronic effect induced lowering of the barrier height to allow charge carrier transport across the ZnO/ZnS interface, resulting in three orders of relative responsivity change measured at three different excitation wavelengths (385, 465, and 520 nm). This work demonstrates a prototype UV/visible photodetector based on the truly wide band gap semiconducting 3D core/shell nanowire array with enhanced performance through the piezo-phototronic effect.

Engineering support for an ultraviolet imager for the ISTP mission

NASA Technical Reports Server (NTRS)

Torr, Douglas G.

1991-01-01

Design and development activities were carried out for the Ultraviolet Imager (UVI) to be flown on the Polar Spacecraft of the INternational Solar Terrestrial Physics (ISTP) Mission. The following tasks were performed: (1) design and fabrication of prototype/engineering model of the UVI imager; (2) preliminary design review; (3) vacuum ultraviolet filter design; (4) auroral energy deposition code; (5) model of LBH vehicle glow; (6) laboratory measurement program of collision cross-sections; and (7) support of ISTP meetings.

A Comprehensive Review of One-Dimensional Metal-Oxide Nanostructure Photodetectors

PubMed Central

Zhai, Tianyou; Fang, Xiaosheng; Liao, Meiyong; Xu, Xijin; Zeng, Haibo; Yoshio, Bando; Golberg, Dmitri

2009-01-01

One-dimensional (1D) metal-oxide nanostructures are ideal systems for exploring a large number of novel phenomena at the nanoscale and investigating size and dimensionality dependence of nanostructure properties for potential applications. The construction and integration of photodetectors or optical switches based on such nanostructures with tailored geometries have rapidly advanced in recent years. Active 1D nanostructure photodetector elements can be configured either as resistors whose conductions are altered by a charge-transfer process or as field-effect transistors (FET) whose properties can be controlled by applying appropriate potentials onto the gates. Functionalizing the structure surfaces offers another avenue for expanding the sensor capabilities. This article provides a comprehensive review on the state-of-the-art research activities in the photodetector field. It mainly focuses on the metal oxide 1D nanostructures such as ZnO, SnO2, Cu2O, Ga2O3, Fe2O3, In2O3, CdO, CeO2, and their photoresponses. The review begins with a survey of quasi 1D metal-oxide semiconductor nanostructures and the photodetector principle, then shows the recent progresses on several kinds of important metal-oxide nanostructures and their photoresponses and briefly presents some additional prospective metal-oxide 1D nanomaterials. Finally, the review is concluded with some perspectives and outlook on the future developments in this area. PMID:22454597

Fabrics Protect Sensitive Skin from UV Rays

NASA Technical Reports Server (NTRS)

2009-01-01

Late Johnson Space Center engineer Dr. Robert Dotts headed a team to develop cool suits for children suffering from life-threatening sun sensitivities. Dotts hoped to develop ultraviolet-blocking technology in a fabric that -- unlike in a bulky space suit -- could remain comfortable, light, and breathable in the sun and heat. The team worked with SPF 4 US LLC (SPF) of Madison, Wisconsin to design ultraviolet-blocking cool suits, which protect sun-sensitive patients and enable them to experience life outdoors safely. Using knowledge gained during the NASA collaboration, SPF created an entire line of ultraviolet-blocking apparel.

Sub-wavelength antenna enhanced bilayer graphene tunable photodetector

DOEpatents

Beechem, III, Thomas Edwin; Howell, Stephen W.; Peters, David W.; Davids, Paul; Ohta, Taisuke

2016-03-22

The integration of bilayer graphene with an absorption enhancing sub-wavelength antenna provides an infrared photodetector capable of real-time spectral tuning without filters at nanosecond timescales.

Ultraviolet GaN photodetectors on Si via oxide buffer heterostructures with integrated short period oxide-based distributed Bragg reflectors and leakage suppressing metal-oxide-semiconductor contacts

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szyszka, A., E-mail: szyszka@ihp-microelectronics.com, E-mail: adam.szyszka@pwr.wroc.pl; Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Janiszewskiego 11/17, 50-372 Wroclaw; Lupina, L.

2014-08-28

Based on a novel double step oxide buffer heterostructure approach for GaN integration on Si, we present an optimized Metal-Semiconductor-Metal (MSM)-based Ultraviolet (UV) GaN photodetector system with integrated short-period (oxide/Si) Distributed Bragg Reflector (DBR) and leakage suppressing Metal-Oxide-Semiconductor (MOS) electrode contacts. In terms of structural properties, it is demonstrated by in-situ reflection high energy electron diffraction and transmission electron microscopy-energy dispersive x-ray studies that the DBR heterostructure layers grow with high thickness homogeneity and sharp interface structures sufficient for UV applications; only minor Si diffusion into the Y{sub 2}O{sub 3} films is detected under the applied thermal growth budget. Asmore » revealed by comparative high resolution x-ray diffraction studies on GaN/oxide buffer/Si systems with and without DBR systems, the final GaN layer structure quality is not significantly influenced by the growth of the integrated DBR heterostructure. In terms of optoelectronic properties, it is demonstrated that—with respect to the basic GaN/oxide/Si system without DBR—the insertion of (a) the DBR heterostructures and (b) dark current suppressing MOS contacts enhances the photoresponsivity below the GaN band-gap related UV cut-off energy by almost up to two orders of magnitude. Given the in-situ oxide passivation capability of grown GaN surfaces and the one order of magnitude lower number of superlattice layers in case of higher refractive index contrast (oxide/Si) systems with respect to classical III-N DBR superlattices, virtual GaN substrates on Si via functional oxide buffer systems are thus a promising robust approach for future GaN-based UV detector technologies.« less

A flexible and miniaturized hair dye based photodetector via chemiluminescence pathway.

PubMed

Lin, Ching-Chang; Sun, Da-Shiuan; Lin, Ya-Lin; Tsai, Tsung-Tso; Cheng, Chieh; Sun, Wen-Hsien; Ko, Fu-Hsiang

2017-04-15

A flexible and miniaturized metal semiconductor metal (MSM) biomolecular photodetector was developed as the core photocurrent system through chemiluminescence for hydrogen peroxide sensing. The flexible photocurrent sensing system was manufactured on a 30-µm-thick crystalline silicon chip by chemical etching process, which produced a flexible silicon chip. A surface texturization design on the flexible device enhanced the light-trapping effect and minimized reflectivity losses from the incident light. The model protein streptavidin bound to horseradish peroxidase (HRP) was successfully immobilized onto the sensor surface through high-affinity conjugation with biotin. The luminescence reaction occurred with luminol, hydrogen peroxide and HRP enzyme, and the emission of light from the catalytic reaction was detected by underlying flexible photodetector. The chemiluminescence in the miniaturized photocurrent sensing system was successfully used to determine the hydrogen peroxide concentration in real-time analyses. The hydrogen peroxide detection limit of the flexible MSM photodetector was 2.47mM. The performance of the flexible MSM photodetector maintained high stability under bending at various bending radii. Moreover, for concave bending, a significant improvement in detection signal intensity (14.5% enhancement compared with a flat configuration) was observed because of the increased photocurrent, which was attributed to enhancement of light trapping. Additionally, this detector was used to detect hydrogen peroxide concentrations in commercial hair dye products, which is a significant issue in the healthcare field. The development of this novel, flexible and miniaturized MSM biomolecular photodetector with excellent mechanical flexibility and high sensitivity demonstrates the applicability of this approach to future wearable sensor development efforts. Copyright © 2016 Elsevier B.V. All rights reserved.

Low Noise Interband Cascade Photodetectors

DTIC Science & Technology

2012-02-28

the interband tunneling channel. These ICIP wafers were processed into deep-etched photodetectors with mesas ranging from 110 to 400 m in...86, 233106 (2005). 10. J. B. Rodriguez , E. Plis, G. Bishop, Y. D. Sharma, H. Kim, L. R. Dawson, and S. Krishna, “nBn structure based on InAs/GaSb type-II strained layer superlattices”, Appl. Phys. Lett. 91, 043514 (2007).

Note: Broadband low-noise photodetector for Pound-Drever-Hall laser stabilization

NASA Astrophysics Data System (ADS)

Potnis, Shreyas; Vutha, Amar C.

2016-07-01

The Pound-Drever-Hall laser stabilization technique requires a fast, low-noise photodetector. We present a simple photodetector design that uses a transformer as an intermediary between a photodiode and cascaded low-noise radio-frequency amplifiers. Our implementation using a silicon photodiode yields a detector with 50 MHz bandwidth, gain >105 V/A, and input current noise <4 pA/ √{ Hz } , allowing us to obtain shot-noise-limited performance with low optical power.

An integrated 12.5-Gb/s optoelectronic receiver with a silicon avalanche photodetector in standard SiGe BiCMOS technology.

PubMed

Youn, Jin-Sung; Lee, Myung-Jae; Park, Kang-Yeob; Rücker, Holger; Choi, Woo-Young

2012-12-17

An optoelectronic integrated circuit (OEIC) receiver is realized with standard 0.25-μm SiGe BiCMOS technology for 850-nm optical interconnect applications. The OEIC receiver consists of a Si avalanche photodetector, a transimpedance amplifier with a DC-balanced buffer, a tunable equalizer, and a limiting amplifier. The fabricated OEIC receiver successfully detects 12.5-Gb/s 2(31)-1 pseudorandom bit sequence optical data with the bit-error rate less than 10(-12) at incident optical power of -7 dBm. The OEIC core has 1000 μm x 280 μm chip area, and consumes 59 mW from 2.5-V supply. To the best of our knowledge, this OEIC receiver achieves the highest data rate with the smallest sensitivity as well as the best power efficiency among integrated OEIC receivers fabricated with standard Si technology.

Smart photodetector arrays for error control in page-oriented optical memory

NASA Astrophysics Data System (ADS)

Schaffer, Maureen Elizabeth

1998-12-01

Page-oriented optical memories (POMs) have been proposed to meet high speed, high capacity storage requirements for input/output intensive computer applications. This technology offers the capability for storage and retrieval of optical data in two-dimensional pages resulting in high throughput data rates. Since currently measured raw bit error rates for these systems fall several orders of magnitude short of industry requirements for binary data storage, powerful error control codes must be adopted. These codes must be designed to take advantage of the two-dimensional memory output. In addition, POMs require an optoelectronic interface to transfer the optical data pages to one or more electronic host systems. Conventional charge coupled device (CCD) arrays can receive optical data in parallel, but the relatively slow serial electronic output of these devices creates a system bottleneck thereby eliminating the POM advantage of high transfer rates. Also, CCD arrays are "unintelligent" interfaces in that they offer little data processing capabilities. The optical data page can be received by two-dimensional arrays of "smart" photo-detector elements that replace conventional CCD arrays. These smart photodetector arrays (SPAs) can perform fast parallel data decoding and error control, thereby providing an efficient optoelectronic interface between the memory and the electronic computer. This approach optimizes the computer memory system by combining the massive parallelism and high speed of optics with the diverse functionality, low cost, and local interconnection efficiency of electronics. In this dissertation we examine the design of smart photodetector arrays for use as the optoelectronic interface for page-oriented optical memory. We review options and technologies for SPA fabrication, develop SPA requirements, and determine SPA scalability constraints with respect to pixel complexity, electrical power dissipation, and optical power limits. Next, we examine data

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer.

PubMed

Liu, Jinzhang; Motta, Nunzio; Lee, Soonil

2012-01-01

ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse.

A Flexible Integrated System Containing a Microsupercapacitor, a Photodetector, and a Wireless Charging Coil.

PubMed

Yue, Yang; Yang, Zhichun; Liu, Nishuang; Liu, Weijie; Zhang, Hui; Ma, Yanan; Yang, Congxing; Su, Jun; Li, Luying; Long, Fei; Zou, Zhengguang; Gao, Yihua

2016-12-27

Nowadays, the integrated systems on a plane substrate containing energy harvesting, energy storing, and working units are strongly desired with the fast development of wearable and portable devices. Here, a simple, low cost, and scalable strategy involving ink printing and electrochemical deposition is proposed to fabricate a flexible integrated system on a plane substrate containing an all-solid-state asymmetric microsupercapacitor (MSC), a photoconduct-type photodetector of perovskite nanowires (NWs), and a wireless charging coil. In the asymmetric MSCs, MnO 2 -PPy and V 2 O 5 -PANI composites are used as positive and negative electrodes, respectively. Typical values of energy density in the range of 15-20 mWh cm -3 at power densities of 0.3-2.5 W cm -3 with an operation potential window of 1.6 V are achieved. In the system, the wireless charging coil receives energy from a wireless power transmitter, which then can be stored in the MSC to drive the photoconductive detector of perovskite NWs in sequence. The designed integrated system exhibits a stable photocurrent response comparable with the detector driven by an external power source. This research provides an important routine to fabricate integrated systems.

A novel active disturbance rejection based tracking design for laser system with quadrant photodetector

NASA Astrophysics Data System (ADS)

Manojlović, Stojadin M.; Barbarić, Žarko P.; Mitrović, Srđan T.

2015-06-01

A new tracking design for laser systems with different arrangements of a quadrant photodetector, based on the principle of active disturbance rejection control is suggested. The detailed models of quadrant photodetector with standard add-subtract, difference-over-sum and diagonal-difference-over-sum algorithms for displacement signals are included in the control loop. Target moving, non-linearity of a photodetector, parameter perturbations and exterior disturbances are treated as a total disturbance. Active disturbance rejection controllers with linear extended state observers for total disturbance estimation and rejection are designed. Proposed methods are analysed in frequency domain to quantify their stability characteristics and disturbance rejection performances. It is shown through simulations, that tracking errors are effectively compensated, providing the laser spot positioning in the area near the centre of quadrant photodetector where the mentioned algorithms have the highest sensitivity, which provides tracking of the manoeuvring targets with high accuracy.

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers.

PubMed

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A Giles; Linfield, Edmund H; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-05

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data

Room-temperature nine-µm-wavelength photodetectors and GHz-frequency heterodyne receivers

NASA Astrophysics Data System (ADS)

Palaferri, Daniele; Todorov, Yanko; Bigioli, Azzurra; Mottaghizadeh, Alireza; Gacemi, Djamal; Calabrese, Allegra; Vasanelli, Angela; Li, Lianhe; Davies, A. Giles; Linfield, Edmund H.; Kapsalidis, Filippos; Beck, Mattias; Faist, Jérôme; Sirtori, Carlo

2018-04-01

Room-temperature operation is essential for any optoelectronics technology that aims to provide low-cost, compact systems for widespread applications. A recent technological advance in this direction is bolometric detection for thermal imaging, which has achieved relatively high sensitivity and video rates (about 60 hertz) at room temperature. However, owing to thermally induced dark current, room-temperature operation is still a great challenge for semiconductor photodetectors targeting the wavelength band between 8 and 12 micrometres, and all relevant applications, such as imaging, environmental remote sensing and laser-based free-space communication, have been realized at low temperatures. For these devices, high sensitivity and high speed have never been compatible with high-temperature operation. Here we show that a long-wavelength (nine micrometres) infrared quantum-well photodetector fabricated from a metamaterial made of sub-wavelength metallic resonators exhibits strongly enhanced performance with respect to the state of the art up to room temperature. This occurs because the photonic collection area of each resonator is much larger than its electrical area, thus substantially reducing the dark current of the device. Furthermore, we show that our photonic architecture overcomes intrinsic limitations of the material, such as the drop of the electronic drift velocity with temperature, which constrains conventional geometries at cryogenic operation. Finally, the reduced physical area of the device and its increased responsivity allow us to take advantage of the intrinsic high-frequency response of the quantum detector at room temperature. By mixing the frequencies of two quantum-cascade lasers on the detector, which acts as a heterodyne receiver, we have measured a high-frequency signal, above four gigahertz (GHz). Therefore, these wide-band uncooled detectors could benefit technologies such as high-speed (gigabits per second) multichannel coherent data

High performance bias-selectable three-color Short-wave/Mid-wave/Long-wave Infrared Photodetectors based on Type-II InAs/GaSb/AlSb superlattices

PubMed Central

Hoang, Anh Minh; Dehzangi, Arash; Adhikary, Sourav; Razeghi, Manijeh

2016-01-01

We propose a new approach in device architecture to realize bias-selectable three-color shortwave-midwave-longwave infrared photodetectors based on InAs/GaSb/AlSb type-II superlattices. The effect of conduction band off-set and different doping levels between two absorption layers are employed to control the turn-on voltage for individual channels. The optimization of these parameters leads to a successful separation of operation regimes; we demonstrate experimentally three-color photodiodes without using additional terminal contacts. As the applied bias voltage varies, the photodiodes exhibit sequentially the behavior of three different colors, corresponding to the bandgap of three absorbers. Well defined cut-offs and high quantum efficiency in each channel are achieved. Such all-in-one devices also provide the versatility of working as single or dual-band photodetectors at high operating temperature. With this design, by retaining the simplicity in device fabrication, this demonstration opens the prospect for three-color infrared imaging. PMID:27051979

The controlled growth of graphene nanowalls on Si for Schottky photodetector

NASA Astrophysics Data System (ADS)

Zhou, Quan; Liu, Xiangzhi; Zhang, Enliang; Luo, Shi; Shen, Jun; Wang, Yuefeng; Wei, Dapeng

2017-12-01

Schottky diode with directly-grown graphene on silicon substrate has advantage of clean junction interface, promising for photodetectors with high-speed and low noise. In this report, we carefully studied the influence of growth parameters on the junction quality and photoresponse of graphene nanowalls (GNWs)-based Schottky photodetectors. We found that shorter growth time is critical for lower dark current, but at the same time higher photocurrent. The influence of growth parameters was attributed to the defect density of various growth time, which results in different degrees of surface absorption for H2O/O2 molecules and P-type doping level. Raman characterization and vacuum annealing treatment were carried out to confirm the regulation mechanism. Meanwhile, the release of thermal stress also makes the ideality factor η of thinner sample better than the thicker. Our results are important for the response improvement of photodetectors with graphene-Si schottky junction.

Fiscal Year 2011 Director’s Strategic Initiative Final Report Heterogeneous Device Architectures Incorporating Nitride Semiconductors for Enhanced Functionality of Optoelectronic Devices

DTIC Science & Technology

2014-03-01

electromagnetic radiation across the spectrum from the ultraviolet ( UV ) to terahertz, heterogeneous integration of these materials with others having different...weak absorption that limit the QE of homogenous SiC-based photodetectors in the deep UV and near UV regions, respectively. Furthermore, we have...Polarization-Enhanced III-Nitride-SiC Avalanche Photodiodes Semiconductor-based ultraviolet ( UV ) avalanche photodetectors (APDs) have significant promise

Simulation of high SNR photodetector with L-C coupling and transimpedance amplifier circuit and its verification

NASA Astrophysics Data System (ADS)

Wang, Shaofeng; Xiang, Xiao; Zhou, Conghua; Zhai, Yiwei; Quan, Runai; Wang, Mengmeng; Hou, Feiyan; Zhang, Shougang; Dong, Ruifang; Liu, Tao

2017-01-01

In this paper, a model for simulating the optical response and noise performances of photodetectors with L-C coupling and transimpedance amplification circuit is presented. To verify the simulation, two kinds of photodetectors, which are based on the same printed-circuit-board (PCB) designing and PIN photodiode but different operational amplifiers, are developed and experimentally investigated. Through the comparisons between the numerical simulation results and the experimentally obtained data, excellent agreements are achieved, which show that the model provides a highly efficient guide for the development of a high signal to noise ratio photodetector. Furthermore, the parasite capacitances on the developed PCB, which are always hardly measured but play a non-negligible influence on the photodetectors' performances, are estimated.

Simulation of high SNR photodetector with L-C coupling and transimpedance amplifier circuit and its verification.

PubMed

Wang, Shaofeng; Xiang, Xiao; Zhou, Conghua; Zhai, Yiwei; Quan, Runai; Wang, Mengmeng; Hou, Feiyan; Zhang, Shougang; Dong, Ruifang; Liu, Tao

2017-01-01

In this paper, a model for simulating the optical response and noise performances of photodetectors with L-C coupling and transimpedance amplification circuit is presented. To verify the simulation, two kinds of photodetectors, which are based on the same printed-circuit-board (PCB) designing and PIN photodiode but different operational amplifiers, are developed and experimentally investigated. Through the comparisons between the numerical simulation results and the experimentally obtained data, excellent agreements are achieved, which show that the model provides a highly efficient guide for the development of a high signal to noise ratio photodetector. Furthermore, the parasite capacitances on the developed PCB, which are always hardly measured but play a non-negligible influence on the photodetectors' performances, are estimated.

Photodetector with absorbing region having resonant periodic absorption between reflectors

DOEpatents

Bryan, R.P.; Olbright, G.R.; Brennan, T.M.; Tsao, J.Y.

1995-02-14

A photodetector is disclosed that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer. 11 figs.

Photodetector with absorbing region having resonant periodic absorption between reflectors

DOEpatents

Bryan, Robert P.; Olbright, Gregory R.; Brennan, Thomas M.; Tsao, Jeffrey Y.

1995-02-14

A photodetector that is responsive to a wavelength or wavelengths of interest which have heretofore been unrealized. The photodetector includes a resonant cavity structure bounded by first and second reflectors, the resonant cavity structure being resonant at the wavelength or wavelengths of interest for containing a plurality of standing waves therein. The photodetector further includes a radiation absorbing region disposed within the resonant cavity structure, the radiation absorbing region including a plurality of radiation absorbing layers spaced apart from one another by a distance substantially equal to a distance between antinodes of adjacent ones of the standing waves. Each of radiation absorbing layers is spatially positioned at a location of one of the antinodes of one of the standing waves such that radiation absorption is enhanced. The radiation absorbing layers may be either bulk layers or quantum wells includes a plurality of layers, each of which is comprised of a strained layer of InGaAs. Individual ones of the InGaAs layers are spaced apart from one another by a GaAs barrier layer.

Interface Engineering of High-Performance Perovskite Photodetectors Based on PVP/SnO2 Electron Transport Layer.

PubMed

Wang, Ye; Zhang, Xingwang; Jiang, Qi; Liu, Heng; Wang, Denggui; Meng, Junhua; You, Jingbi; Yin, Zhigang

2018-02-21

Hybrid organic-inorganic perovskites have attracted intensive interest as active materials for high-performance photodetectors. However, studies on the electron transport layer (ETL) and its influence on the response time of photodetectors remain limited. Herein, we compare the performances of perovskite photodetectors with TiO 2 and SnO 2 ETLs, especially on the response time. Both photodetectors exhibit a high on/off current ratio of 10 5 , a large detectivity around 10 12 Jones, and a linear dynamic range over 80 dB. The SnO 2 -based perovskite photodiodes show ultrahigh response rates of 3 and 6 μs for the rise and decay times, respectively. However, photodetectors with TiO 2 ETLs have low responsivity and long response time at low driving voltage, which is attributed to the electron extraction barrier at the TiO 2 /perovskite interface and the charge traps in the TiO 2 layer. Furthermore, the dark current of SnO 2 -based perovskite photodiodes is effectively suppressed by inserting a poly(vinylpyrrolidone) interlayer, and then the on/off current ratio increases to 1.2 × 10 6 , corresponding to an improvement of 1 order of magnitude. Such low-cost, solution-processable perovskite photodetectors with high performance show promising potential for future optoelectronic applications.

Photodetectors with passive thermal radiation control

DOEpatents

Lin, Shawn-Yu; Fleming, James G.; Dodson, Brian W.

2001-10-02

A new class of photodetectors which include means for passive shielding against undesired thermal radiation is disclosed. Such devices can substitute in applications currently requiring cooled optical sensors, such as IR detection and imaging. This description is included for purposes of searching, and is not intended to limit or otherwise influence the interpretation of the present invention.

Self-Assembly High-Performance UV-vis-NIR Broadband β-In2Se3/Si Photodetector Array for Weak Signal Detection.

PubMed

Zheng, Zhaoqiang; Yao, Jiandong; Wang, Bing; Yang, Yibin; Yang, Guowei; Li, Jingbo

2017-12-20

The emergence of a rich variety of layered materials has attracted considerable attention in recent years because of their exciting properties. However, the applications of layered materials in optoelectronic devices are hampered by the low light absorption of monolayers/few layers, the lack of p-n junction, and the challenges for large-scale production. Here, we report a scalable production of β-In 2 Se 3 /Si heterojunction arrays using pulsed-laser deposition. Photodetectors based on the as-produced heterojunction array are sensitive to a broadband wavelength from ultraviolet (370 nm) to near-infrared (808 nm), showing a high responsivity (5.9 A/W), a decent current on/off ratio (∼600), and a superior detectivity (4.9 × 10 12 jones), simultaneously. These figures-of-merits are among the best values of the reported heterojunction-based photodetectors. In addition, these devices can further enable the detection of weak signals, as successfully demonstrated with weak light sources including a flashlight, lighter, and fluorescent light. Device physics modeling shows that their high performance is attributed to the strong light absorption of the relatively thick β-In 2 Se 3 film (20.3 nm) and the rational energy band structures of β-In 2 Se 3 and Si, which allows efficient separation of photoexcited electron-hole pairs. These results offer a new insight into the rational design of optoelectronic devices from the synergetic effect of layered materials as well as mature semiconductor technology.

An ultra-broadband perovskite-PbS quantum dot sensitized carbon nanotube photodetector.

PubMed

Ka, Ibrahima; Gerlein, Luis F; Asuo, Ivy M; Nechache, Riad; Cloutier, Sylvain G

2018-05-17

Organic-inorganic perovskites have been hailed as promising candidates for optoelectronic and photovoltaic devices, but their operation remains limited to the visible spectrum. Here, we combine single-wall carbon nanotubes, PbS quantum dots and a perovskite to synthesize hybrid devices suitable for operation in both the visible and near-infrared. The photodetectors thus fabricated show responsivities as high as 0.5 A W-1 and 0.35 A W-1 at 500 nm and at 1300 nm, respectively, with an applied bias of 1 V. Moreover, the incorporation of nanotubes within the perovskite matrix facilitates the carrier extraction, resulting in response time under 250 μs, a gain-bandwidth product of 0.1 MHz and detectivities of 1.4 × 1011 Jones and 0.9 × 1011 Jones at 500 nm and at 1300 nm, respectively. This unique approach opens new pathways for the development of low-cost, high-speed and broadband perovskite-based optoelectronic devices for large-scale manufacturing.

Simulation of optimum parameters for GaN MSM UV photodetector

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alhelfi, Mohanad A., E-mail: mhad12344@gmail.com; Ahmed, Naser M., E-mail: nas-tiji@yahoo.com; Hashim, M. R., E-mail: roslan@usm.my

2016-07-06

In this study the optimum parameters of GaN M-S-M photodetector are discussed. The evaluation of the photodetector depends on many parameters, the most of the important parameters the quality of the GaN film and others depend on the geometry of the interdigited electrode. In this simulation work using MATLAB software with consideration of the reflection and absorption on the metal contacts, a detailed study involving various electrode spacings (S) and widths (W) reveals conclusive results in device design. The optimum interelectrode design for interdigitated MSM-PD has been specified and evaluated by effect on quantum efficiency and responsivity.

Visible Light Communication System Using an Organic Bulk Heterojunction Photodetector

PubMed Central

Arredondo, Belén; Romero, Beatriz; Pena, José Manuel Sánchez; Fernández-Pacheco, Agustín; Alonso, Eduardo; Vergaz, Ricardo; de Dios, Cristina

2013-01-01

A visible light communication (VLC) system using an organic bulk heterojunction photodetector (OPD) is presented. The system has been successfully proven indoors with an audio signal. The emitter consists of three commercial high-power white LEDs connected in parallel. The receiver is based on an organic photodetector having as active layer a blend of poly(3-hexylthiophene) (P3HT) and phenyl C61-butyric acid methyl ester (PCBM). The OPD is opto-electrically characterized, showing a responsivity of 0.18 A/W and a modulation response of 790 kHz at −6 V. PMID:24036584

Atomic Layer Deposition of Chemical Passivation Layers and High Performance Anti-Reflection Coatings on Back-Illuminated Detectors

NASA Technical Reports Server (NTRS)

Hoenk, Michael E. (Inventor); Greer, Frank (Inventor); Nikzad, Shouleh (Inventor)

2014-01-01

A back-illuminated silicon photodetector has a layer of Al2O3 deposited on a silicon oxide surface that receives electromagnetic radiation to be detected. The Al2O3 layer has an antireflection coating deposited thereon. The Al2O3 layer provides a chemically resistant separation layer between the silicon oxide surface and the antireflection coating. The Al2O3 layer is thin enough that it is optically innocuous. Under deep ultraviolet radiation, the silicon oxide layer and the antireflection coating do not interact chemically. In one embodiment, the silicon photodetector has a delta-doped layer near (within a few nanometers of) the silicon oxide surface. The Al2O3 layer is expected to provide similar protection for doped layers fabricated using other methods, such as MBE, ion implantation and CVD deposition.

Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

NASA Astrophysics Data System (ADS)

Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

2018-05-01

Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

A bootstrapped, low-noise, and high-gain photodetector for shot noise measurement

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Haijun; Yang, Wenhai; Li, Zhixiu

2014-01-15

We presented a low-noise, high-gain photodetector based on the bootstrap structure and the L-C (inductance and capacitance) combination. Electronic characteristics of the photodetector, including electronic noise, gain and frequency response, and dynamic range, were verified through a single-frequency Nd:YVO{sub 4} laser at 1064 nm with coherent output. The measured shot noise of 50 μW laser was 13 dB above the electronic noise at the analysis frequency of 2 MHz, and 10 dB at 3 MHz. And a maximum clearance of 28 dB at 2 MHz was achieved when 1.52 mW laser was illuminated. In addition, the photodetector showed excellent linearitiesmore » for both DC and AC amplifications in the laser power range between 12.5 μW and 1.52 mW.« less

Development of a direct patterning method for functional oxide thin films using ultraviolet irradiation and hybrid-cluster gels and its application to thin-film transistor fabrication

NASA Astrophysics Data System (ADS)

Yoshimoto, Yuuki; Li, Jinwang; Shimoda, Tatsuya

2018-04-01

A gel state exists in the solution-solid conversion process. We found that solidification can be promoted by irradiating the gel with ultraviolet (UV) light. In this study, a patterning method without using a vacuum system or employing photoresist materials has been proposed wherein solidification was applied to a gel by UV irradiation. Indium oxide gel, indium gallium oxide gel, lanthanum zirconium oxide gel, and lanthanum ruthenium oxide gels were successfully patterned by using our technique. Moreover, an oxide thin-film transistor was fabricated by our novel patterning method and was successfully operated.

Characteristic of an Organic Photodetector Fabricated With P3HT:ICBA Blending Materials for Indirect X-Ray Detection

NASA Astrophysics Data System (ADS)

Seon, Hyeji; Kim, Beomsu; Kang, Jungwon

2017-07-01

In this study, an organic conjugated polymer-based photodetector was investigated as a candidate for the indirecttype radiation detector. In order to improve the photon to charge conversion efficiency, we selected the fullerene derivative indeneC60-bisadduct (ICBA) as an n-type semiconductor. The optimal process condition was investigated while varying the P3HT:ICBA blending ratio and spin-rate. The detector at the condition of P3HT:ICBA = 3:2 blending ratio and 900 rpm spin-rate showed the highest sensitivity of 1.35 mC/Gy · cm2 and the highest PCE of 2.93%. Compared to the common P3HT:PCBM detector, the best P3HT:ICBA detector showed 27.36% enhancement of sensitivity and 27.68% enhancement of the PCE.

Photodetector timing research at Fermilab

DOE PAGES

Ramberg, E.; Ronzhin, A.; Albrow, M.; ...

2011-01-01

We describe here the outlines of research undertaken by Fermilab into timing characteristics of photodetectors. We describe our experimental method and give benchtop results on the timing resolution of micro-channel plate photomultipliers (MCP-PMT) and silicon photomultipliers (SiPM). In addition, we describe results of various configurations of these detectors, along with quartz radiators, in particle test beams at Fermilab. Results for timing of scintillator light using the DRS4 high speed digitizer are also presented.

Ultraviolet photodetection of flexible ZnO nanowire sheets in polydimethylsiloxane polymer

PubMed Central

Motta, Nunzio; Lee, Soonil

2012-01-01

Summary ZnO nanowires are normally exposed to an oxygen atmosphere to achieve high performance in UV photodetection. In this work we present results on a UV photodetector fabricated using a flexible ZnO nanowire sheet embedded in polydimethylsiloxane (PDMS), a gas-permeable polymer, showing reproducible UV photoresponse and enhanced photoconduction. PDMS coating results in a reduced response speed compared to that of a ZnO nanowire film in air. The rising speed is slightly reduced, while the decay time is prolonged by about a factor of four. We conclude that oxygen molecules diffusing in PDMS are responsible for the UV photoresponse. PMID:23016139

Pilot production and advanced development of large-area picosecond photodetectors

NASA Astrophysics Data System (ADS)

Minot, Michael J.; Adams, Bernhard W.; Aviles, Melvin; Bond, Justin L.; Craven, Christopher A.; Cremer, Till; Foley, Michael R.; Lyashenko, Alexey; Popecki, Mark A.; Stochaj, Michael E.; Worstell, William A.; Mane, Anil U.; Elam, Jeffrey W.; Siegmund, Oswald H. W.; Ertley, Camden; Frisch, Henry; Elagin, Andrey

2016-09-01

We report pilot production and advanced development performance results achieved for Large Area Picosecond Photodetectors (LAPPD). The LAPPD is a microchannel plate (MCP) based photodetector, capable of imaging with single-photon sensitivity at high spatial and temporal resolutions in a hermetic package with an active area of 400 square centimeters. In December 2015, Incom Inc. completed installation of equipment and facilities for demonstration of early stage pilot production of LAPPD. Initial fabrication trials commenced in January 2016. The "baseline" LAPPD employs an all-glass hermetic package with top and bottom plates and sidewalls made of borosilicate float glass. Signals are generated by a bi-alkali Na2KSb photocathode and amplified with a stacked chevron pair of "next generation" MCPs produced by applying resistive and emissive atomic layer deposition coatings to borosilicate glass capillary array (GCA) substrates. Signals are collected on RF strip-line anodes applied to the bottom plates which exit the detector via pinfree hermetic seals under the side walls. Prior tests show that LAPPDs have electron gains greater than 107, submillimeter space resolution for large pulses and several mm for single photons, time resolutions of 50 picoseconds for single photons, predicted resolution of less than 5 picoseconds for large pulses, high stability versus charge extraction, and good uniformity. LAPPD performance results for product produced during the first half of 2016 will be reviewed. Recent advances in the development of LAPPD will also be reviewed, as the baseline design is adapted to meet the requirements for a wide range of emerging application. These include a novel ceramic package design, ALD coated MCPs optimized to have a low temperature coefficient of resistance (TCR) and further advances to adapt the LAPPD for cryogenic applications using Liquid Argon (LAr). These developments will meet the needs for DOE-supported RD for the Deep Underground Neutrino

Synthesis of ALD zinc oxide and thin film materials optimization for UV photodetector applications

NASA Astrophysics Data System (ADS)

Tapily, Kandabara Nouhoum

for the electrical and optical properties of the ALD ZnO films were analyzed and identified. ALD ZnO based electronic devices were fabricated, optimized and their electrical characteristics measured. The photocurrent characteristics of ALD ZnO were also optimized, and high efficiency UV-photodetectors were achieved.

Spectrally resolved, broadband frequency response characterization of photodetectors using continuous-wave supercontinuum sources

NASA Astrophysics Data System (ADS)

Choudhury, Vishal; Prakash, Roopa; Nagarjun, K. P.; Supradeepa, V. R.

2018-02-01

A simple and powerful method using continuous wave supercontinuum lasers is demonstrated to perform spectrally resolved, broadband frequency response characterization of photodetectors in the NIR Band. In contrast to existing techniques, this method allows for a simple system to achieve the goal, requiring just a standard continuous wave(CW) high-power fiber laser source and an RF spectrum analyzer. From our recent work, we summarize methods to easily convert any high-power fiber laser into a CW supercontinuum. These sources in the time domain exhibit interesting properties all the way down to the femtosecond time scale. This enables measurement of broadband frequency response of photodetectors while the wide optical spectrum of the supercontinuum can be spectrally filtered to obtain this information in a spectrally resolved fashion. The method involves looking at the RF spectrum of the output of a photodetector under test when incident with the supercontinuum. By using prior knowledge of the RF spectrum of the source, the frequency response can be calculated. We utilize two techniques for calibration of the source spectrum, one using a prior measurement and the other relying on a fitted model. Here, we characterize multiple photodetectors from 150MHz bandwidth to >20GHz bandwidth at multiple bands in the NIR region. We utilize a supercontinuum source spanning over 700nm bandwidth from 1300nm to 2000nm. For spectrally resolved measurement, we utilize multiple wavelength bands such as around 1400nm and 1600nm. Interesting behavior was observed in the frequency response of the photodetectors when comparing broadband spectral excitation versus narrower band excitation.

Modeling of the photodetector based on the multilayer graphene nanoribbons

NASA Astrophysics Data System (ADS)

Liu, Haiyue; Niu, Yanxiong; Yin, Yiheng; Liu, Shuai

2016-07-01

Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for the photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on InxGaxAs in room temperature.

Statistical photocalibration of photodetectors for radiometry without calibrated light sources

NASA Astrophysics Data System (ADS)

Yielding, Nicholas J.; Cain, Stephen C.; Seal, Michael D.

2018-01-01

Calibration of CCD arrays for identifying bad pixels and achieving nonuniformity correction is commonly accomplished using dark frames. This kind of calibration technique does not achieve radiometric calibration of the array since only the relative response of the detectors is computed. For this, a second calibration is sometimes utilized by looking at sources with known radiances. This process can be used to calibrate photodetectors as long as a calibration source is available and is well-characterized. A previous attempt at creating a procedure for calibrating a photodetector using the underlying Poisson nature of the photodetection required calculations of the skewness of the photodetector measurements. Reliance on the third moment of measurement meant that thousands of samples would be required in some cases to compute that moment. A photocalibration procedure is defined that requires only first and second moments of the measurements. The technique is applied to image data containing a known light source so that the accuracy of the technique can be surmised. It is shown that the algorithm can achieve accuracy of nearly 2.7% of the predicted number of photons using only 100 frames of image data.

Method of fabricating a high aspect ratio microstructure

DOEpatents

Warren, John B.

2003-05-06

The present invention is for a method of fabricating a high aspect ratio, freestanding microstructure. The fabrication method modifies the exposure process for SU-8, an negative-acting, ultraviolet-sensitive photoresist used for microfabrication whereby a UV-absorbent glass substrate, chosen for complete absorption of UV radiation at 380 nanometers or less, is coated with a negative photoresist, exposed and developed according to standard practice. This UV absorbent glass enables the fabrication of cylindrical cavities in a negative photoresist microstructures that have aspect ratios of 8:1.

A [111]-Cut Si Hemisphere Two-Photon Response Photodetector

NASA Astrophysics Data System (ADS)

Liu, Xiu-Huan; Chen, Zhan-Guo; Jia, Gang; Wang, Hai-Yan; Gao, Yan-Jun; Li, Yi

2011-11-01

Properties of two-photon response in a [111]-cut nearly-intrinsic Si hemisphere photodetector are studied. The measured photocurrent of the photodetector responding to the 1.32μm continuous wave laser shows a quadratic dependence on the coupled optical power and is saturated with the bias voltage. Also, the photocurrent is independent of polarization. Such properties are in good agreement with the theory of two-photon absorption. The isotropic photocurrent generated from the [111]-cut Si hemisphere is compared to the anisotropic one induced in the [110]-cut Si sample and the ratio of χxxxx/χxxyy for silicon performing at 1.32 μm is calculated to be 2.4 via the fitted function of the anisotropic photocurrent from the [110]-cut sample.

Electronic band structures and optical properties of type-II superlattice photodetectors with interfacial effect.

PubMed

Qiao, Peng-Fei; Mou, Shin; Chuang, Shun Lien

2012-01-30

The electronic band structures and optical properties of type-II superlattice (T2SL) photodetectors in the mid-infrared (IR) range are investigated. We formulate a rigorous band structure model using the 8-band k · p method to include the conduction and valence band mixing. After solving the 8 × 8 Hamiltonian and deriving explicitly the new momentum matrix elements in terms of envelope functions, optical transition rates are obtained through the Fermi's golden rule under various doping and injection conditions. Optical measurements on T2SL photodetectors are compared with our model and show good agreement. Our modeling results of quantum structures connect directly to the device-level design and simulation. The predicted doping effect is readily applicable to the optimization of photodetectors. We further include interfacial (IF) layers to study the significance of their effect. Optical properties of T2SLs are expected to have a large tunable range by controlling the thickness and material composition of the IF layers. Our model provides an efficient tool for the designs of novel photodetectors.

640 x 512 Pixels Long-Wavelength Infrared (LWIR) Quantum-Dot Infrared Photodetector (QDIP) Imaging Focal Plane Array

NASA Technical Reports Server (NTRS)

Gunapala, Sarath D.; Bandara, Sumith V.; Hill, Cory J.; Ting, David Z.; Liu, John K.; Rafol, Sir B.; Blazejewski, Edward R.; Mumolo, Jason M.; Keo, Sam A.; Krishna, Sanjay;

Patch antenna terahertz photodetectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palaferri, D.; Todorov, Y., E-mail: yanko.todorov@univ-paris-diderot.fr; Chen, Y. N.

2015-04-20

We report on the implementation of 5 THz quantum well photodetector exploiting a patch antenna cavity array. The benefit of our plasmonic architecture on the detector performance is assessed by comparing it with detectors made using the same quantum well absorbing region, but processed into a standard 45° polished facet mesa. Our results demonstrate a clear improvement in responsivity, polarization insensitivity, and background limited performance. Peak detectivities in excess of 5 × 10{sup 12} cmHz{sup 1/2}/W have been obtained, a value comparable with that of the best cryogenic cooled bolometers.

Improved performance of high indium InGaAs photodetectors with InAlAs barrier

NASA Astrophysics Data System (ADS)

Du, Ben; Gu, Yi; Chen, Xing-You; Ma, Ying-Jie; Shi, Yan-Hui; Zhang, Jian; Zhang, Yong-Gang

2018-06-01

We report on the demonstration of an InP-based In0.83Ga0.17As photodetector with an In0.83Al0.17As barrier, which is lattice-matched to the absorption layer. According to the comprehensive comparison with the photodetector without the barrier, the dark current is markedly reduced by inserting the InAlAs barrier. Although the photoresponse slightly decreases for the device with the InAlAs barrier, the detectivity remains higher than that of the reference device at room temperature and significantly increases at lower temperatures. These results indicate that InAlAs is a promising barrier layer in high-indium InGaAs photodetectors.

A transparent ultraviolet triggered amorphous selenium p-n junction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saito, Ichitaro; Soga, Kenichi; Overend, Mauro

2011-04-11

This paper will introduce a semitransparent amorphous selenium (a-Se) film exhibiting photovoltaic effects under ultraviolet light created through a simple and inexpensive method. We found that chlorine can be doped into a-Se through electrolysis of saturated salt water, and converts the weak p-type material into an n-type material. Furthermore, we found that a p-n diode fabricated through this process has shown an open circuit voltage of 0.35 V toward ultraviolet illumination. Our results suggest the possibility of doping control depending on the electric current during electrolysis and the possibility of developing a simple doping method for amorphous photoconductors.

Contamination control program plan for the ultraviolet spectrometer experiment, revision E

NASA Technical Reports Server (NTRS)

Gilmore, D. B.

1972-01-01

The contamination control program plan delineates the cleanliness requirements to be attained and maintained, and the methods to be utilized, in the fabrication, handling, test, calibration, shipment, pre-installation checkout and installation for the ultraviolet spectrometer experiment prototype, qualification and flight equipment.

Transparent ultraviolet photovoltaic cells.

PubMed

Yang, Xun; Shan, Chong-Xin; Lu, Ying-Jie; Xie, Xiu-Hua; Li, Bing-Hui; Wang, Shuang-Peng; Jiang, Ming-Ming; Shen, De-Zhen

2016-02-15

Photovoltaic cells have been fabricated from p-GaN/MgO/n-ZnO structures. The photovoltaic cells are transparent to visible light and can transform ultraviolet irradiation into electrical signals. The efficiency of the photovoltaic cells is 0.025% under simulated AM 1.5 illumination conditions, while it can reach 0.46% under UV illumination. By connecting several such photovoltaic cells in a series, light-emitting devices can be lighting. The photovoltaic cells reported in this Letter may promise the applications in glass of buildings to prevent UV irradiation and produce power for household appliances in the future.

A facile fabrication of multifunctional knit polyester fabric based on chitosan and polyaniline polymer nanocomposite

NASA Astrophysics Data System (ADS)

Tang, Xiaoning; Tian, Mingwei; Qu, Lijun; Zhu, Shifeng; Guo, Xiaoqing; Han, Guangting; Sun, Kaikai; Hu, Xili; Wang, Yujiao; Xu, Xiaoqi

2014-10-01

Knit polyester fabric was successively modified and decorated with chitosan layer and polyaniline polymer nanocomposite layer in this paper. The fabric was firstly treated with chitosan to form a stable layer through the pad-dry-cure process, and then the polyaniline polymer nanocomposite layer was established on the outer layer by in situ chemical polymerization method using ammonium persulfate as oxidant and chlorhydric acid as dopant. The surface morphology of coated fabric was characterized by scanning electron microscopy (SEM), and the co-existence of chitosan layer and granular polyaniline polymer nanocomposite was confirmed and well dispersed on the fabric surface. The resultant fabric was endowed with remarkable electrical conductivity properties and efficient water-repellent capability, which also have been found stable after water laundering. In addition, the photocatalytic decomposition activity for reactive red dye was observed when the multifunctional knit polyester fabric was exposed to the illumination of ultraviolet lamp. These results indicated that chitosan and polyaniline polymer nanocomposite could form ideal multifunctional coatings on the surface of knit polyester fabric.

Vis-Near-Infrared Photodetectors Based on Methyl Ammonium Lead Iodide Thin Films by Pulsed Laser Deposition

NASA Astrophysics Data System (ADS)

Patel, Nagabhushan; Dias, Sandra; Krupanidhi, S. B.

2018-04-01

Organic-inorganic hybrid perovskite materials are considered as promising candidates for emerging thin-film photodetectors. In this work, we discuss the application of the CH3NH3PbI3 thin films by pulsed laser deposition for photodetection applications. With this method, we obtained good perovskite film coverage on fluorine-doped tin oxide-coated substrates and observed wel- developed grains. The films showed no sign of degradation over several months of testing. We investigated the surface morphology and surface roughness of the films by field emission scanning electron microscopy and atomic force microscopy. The optical response of the films was studied using ultraviolet-visible and photoluminescence spectroscopy. We carried out a study on the solar and infrared photodetection of CH3NH3PbI3 thin films. The values of the responsivity, sensitivity, external quantum efficiency and specific detectivity under 1 sun illumination and 0.7 V bias were 105.4 A/W, 1.9, 2.38 × 104% and 1.5 × 1012 Jones, respectively.

CdHgTe heterostructures for new-generation IR photodetectors operating at elevated temperatures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Varavin, V. S.; Vasilyev, V. V.; Guzev, A. A.

2016-12-15

The parameters of multilayer Cd{sub x}Hg{sub 1–x}Te heterostructures for photodetectors operating at wavelengths of up to 5 μm, grown by molecular-beam epitaxy (MBE) on silicon substrates, are studied. The passivating properties of thin CdTe layers on the surface of these structures are analyzed by measuring the C–V characteristics. The temperature dependences of the minority carrier lifetime in the photoabsorption layer after growth and thermal annealing are investigated. Samples of p{sup +}–n-type photodiodes are fabricated by the implantation of arsenic ions into n-type layers, doped with In to a concentration of (1–5) × 10{sup 15} cm{sup –3}. The temperature dependences ofmore » the reverse currents are measured at several bias voltages; these currents turn out to be almost two orders of magnitude lower than those for n{sup +}–p-type diodes.« less

Molecular Beam Epitaxy Growth of AlGaAs/GaAs Vertical Cavity Surface Emitting Lasers and the Performance of PIN Photodetector/Vertical Cavity Surface Emitting Laser Integrated Structures

NASA Astrophysics Data System (ADS)

Wang, Y. H.; Hasnain, G.; Tai, K.; Wynn, J. D.; Weir, B. E.; Choquette, K. D.; Cho, A. Y.

1991-12-01

An all-epitaxial planar top emitting AlGaAs/GaAs multi-quantum well laser is fabricated and characterized. The constructed vertical cavity surface emitting laser (VCSEL) consists of GaAs/Al0.2Ga0.8As (100/80 Å) quantum wells sandwiched between two doped distributed Bragg reflectors characterized by a two-step composition profile. Two Ga and two Al cells are used to facilitate the growth of mirror profile. The gain-guided VCSEL is found to generate continuous wave at a characteristic temperature of 210°K up to 90°C, and can be amplitude modulated at frequencies above 5 GHz. Thresholds as low as 2 mA, and a CW power more than 1.5 mW, are obtained at room temperature. Monolithic integration of a PIN photodetector on top of the VCSEL is demonstrated and discussed. The integrated photodetector shows an effective linear responsivity to the laser emission of 0.25 A/W.

Engineering the temporal response of photoconductive photodetectors via selective introduction of surface trap states.

PubMed

Konstantatos, Gerasimos; Levina, Larissa; Fischer, Armin; Sargent, Edward H

2008-05-01

Photoconductive photodetectors fabricated using simple solution-processing have recently been shown to exhibit high gains (>1000) and outstanding sensitivities ( D* > 10(13) Jones). One ostensible disadvantage of exploiting photoconductive gain is that the temporal response is limited by the release of carriers from trap states. Here we show that it is possible to introduce specific chemical species onto the surfaces of colloidal quantum dots to produce only a single, desired trap state having a carefully selected lifetime. In this way we demonstrate a device that exhibits an attractive photoconductive gain (>10) combined with a response time ( approximately 25 ms) useful in imaging. We achieve this by preserving a single surface species, lead sulfite, while eliminating lead sulfate and lead carboxylate. In doing so we preserve the outstanding sensitivity of these devices, achieving a specific detectivity of 10(12) Jones in the visible, while generating a temporal response suited to imaging applications.

Photo-Detectors Integrated with Resonant Tunneling Diodes

PubMed Central

Romeira, Bruno; Pessoa, Luis M.; Salgado, Henrique M.; Ironside, Charles N.; Figueiredo, José M. L.

2013-01-01

We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR) region. The resonant tunneling diode photo-detector (RTD-PD) can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD's NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz) modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems. PMID:23881142

Photo-detectors integrated with resonant tunneling diodes.

PubMed

Romeira, Bruno; Pessoa, Luis M; Salgado, Henrique M; Ironside, Charles N; Figueiredo, José M L

2013-07-22

We report on photo-detectors consisting of an optical waveguide that incorporates a resonant tunneling diode (RTD). Operating at wavelengths around 1.55 μm in the optical communications C band we achieve maximum sensitivities of around 0.29 A/W which is dependent on the bias voltage. This is due to the nature of RTD nonlinear current-voltage characteristic that has a negative differential resistance (NDR) region. The resonant tunneling diode photo-detector (RTD-PD) can be operated in either non-oscillating or oscillating regimes depending on the bias voltage quiescent point. The oscillating regime is apparent when the RTD-PD is biased in the NDR region giving rise to electrical gain and microwave self-sustained oscillations Taking advantage of the RTD's NDR distinctive characteristics, we demonstrate efficient detection of gigahertz (GHz) modulated optical carriers and optical control of a RTD GHz oscillator. RTD-PD based devices can have applications in generation and optical control of GHz low-phase noise oscillators, clock recovery systems, and fiber optic enabled radio frequency communication systems.

Corrugated Quantum Well Infrared Photodetector Focal Plane Array Test Results

NASA Technical Reports Server (NTRS)

Goldberg, A.; Choi, K. K.; Das, N. C.; La, A.; Jhabvala, M.

1999-01-01

The corrugated quantum-well infrared photodetector (C-QWIP) uses total internal reflection to couple normal incident light into the optically active quantum wells. The coupling efficiency has been shown to be relatively independent of the pixel size and wavelength thus making the C-QWIP a candidate for detectors over the entire infrared spectrum. The broadband coupling efficiency of the C-QWIP makes it an ideal candidate for multiwavelength detectors. We fabricated and tested C-QWIP focal plane arrays (FPAs) with cutoff wavelengths of 11.2 and 16.2 micrometers. Each FPA has 256 x 256 pixels that are bump-bonded to a direct injection readout circuit. Both FPAs provided infrared imagery with good aesthetic attributes. For the 11.2-micrometers FPA, background-limited performance (BLIP) was observed at 60 K with f/3 optics. For the 16.2-micrometers FPA, BLIP was observed at 38 K. Besides the reduction of dark current in C-QWIP structures, the measured internal quantum efficiency (eta) remains to be high. The values for responsivity and quantum efficiency obtained from the FPA results agree well with those measured for single devices.

Antimony-Based Type-II Superlattice Photodetectors

DTIC Science & Technology

2010-09-06

photodetectors, antimony-based mid- infrared detectors Shun L. Chuang, Russell D. Dupuis University of Illinois - Urbana Grants and Contracts Office...Q. Yang, Interband Cascade Detectors , US Patent #7,282,777, October 16, 2007. Graduate Students PERCENT_SUPPORTEDNAME Shin Mou 0.25 Adam Petschke...DD882) Inventions (DD882) Interband Cascade Detectors Patent Filed in US? (5d-1) Y NPatent Filed in Foreign Countries? (5d-2) Was the assignment

An organic thin film photodiode as a portable photodetector for the detection of alkylphenol polyethoxylates by a flow fluorescence-immunoassay on magnetic microbeads in a microchannel.

PubMed

Ishimatsu, Ryoichi; Naruse, Azusa; Liu, Rong; Nakano, Koji; Yahiro, Masayuki; Adachi, Chihaya; Imato, Toshihiko

2013-12-15

An organic thin film photodiode (OPD) was successfully employed as a portable photodetector in a competitive enzyme-linked immunosorbent assay (ELISA) of a class of nonionic surfactants, namely alkylphenol polyethoxylates (APnEOs) which are an environmental pollutant. Microbeads that were chemically immobilized with an anti-APnEOs antibody were used in the assay. The OPD consisted of a layer of copper phthalocyanine (CuPc), C60 and a second layer of bathocuproine (BCP) with a bulk heterojunction composed of CuPc and C60 prepared by a vapor deposition method on an indium-tin oxide coated glass substrate. The OPD showed an incident photon-current efficiency (IPCE) of approximately 19% for light at a wavelength of 585 nm. This relatively high IPCE at 585 nm makes it suitable for detecting the fluorescence of resorufin (λem=585 nm), the product of the competitive ELISA, produced through the enzymatic reaction of Amplex Red with horseradish peroxidase (HRP) and H2O2. A fluorometric detector was assembled on a microchip by combining the fabricated OPD and a commercial LED as a photodetector and a light source, respectively. The photocurrent of the OPD due to the fluorescence of resorufin was proportional to the concentration of resorufin in the concentration range from 0 to 8 μM. When the fabricated OPD was used as a portable photodetector, the competitive ELISA of APnEOs using HRP labeled APnEOs (HRP-APnEOs) was performed on magnetic microbeads on which surface an anti-APnEOs antibody had been immobilized. A typical sigmoidal calibration curve was obtained and the data were in good agreement with a numerical simulation, where the photocurrent of the OPD was plotted against the concentration of APnEOs, determined via the competitive ELISA. The detection limit of the immunoassay for APnEOs was approximately 2 and 4 ppb in batch and flow system, respectively. © 2013 Elsevier B.V. All rights reserved.

Interface definition for the Far Ultraviolet Spectrometer Experiment S169

NASA Technical Reports Server (NTRS)

Fastie, W. G.

1971-01-01

A final contract for development, fabrication, test and flight of the ultraviolet spectrometer experiment on an Apollo space mission is reported. Two interface control documents were completed and signed off and three more were essentially completed. Supporting preliminary concepts formulation, design study and component investigation, specification and subcontract negotiation were accomplished.

Modeling of the photodetector based on the multilayer graphene nanoribbons

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Haiyue; Key Laboratory of Micro-nano Measurement-Manipulation and Physics Ministry of Education, Beijing University of Aeronautics and Astronautics, Beijing 100191; Niu, Yanxiong, E-mail: niuyx@buaa.edu.cn

2016-07-15

Graphene nanoribbon (GNR), which has unique properties and advantages, is a crucial component of nanoelectornic devices, especially in the development of photoelectric detectors. In this work, an infrared photodetector based on the structure of stacked multiple-GNRs, which is separated by a little thick barrier layers (made of tungsten disulfide or related materials) to prevent tunneling current, is proposed and modeled. Operation of photoelectric detector is related to the electron cascaded radiative transition in the adjacent GNRs strengthened by the electrons heated due to the incident light. With a developed model, the working principle is analyzed and the relationships for themore » photocurrent and dark current as functions of the intensity of the incident radiation are derived. The spectral dependence of the responsivity and detectivity for graphene nanoribbons photodetector (GNRs-PT) with different Fermi energy, band gaps and numbers of GNRs layers are analyzed as well. The results demonstrate that the spectral characteristics depend on the GNRs band gap, which shows a potential on GNRs-PT application in the multi-wavelength systems. In addition, GNRs-PT has a better spectrum property and higher responsivity compared to photodetectors based on In{sub x}Ga{sub x}As in room temperature.« less

Bias Selectable Dual Band AlGaN Ultra-violet Detectors

NASA Technical Reports Server (NTRS)

Yan, Feng; Miko, Laddawan; Franz, David; Guan, Bing; Stahle, Carl M.

2007-01-01

Bias selectable dual band AlGaN ultra-violet (UV) detectors, which can separate UV-A and UV-B using one detector in the same pixel by bias switching, have been designed, fabricated and characterized. A two-terminal n-p-n photo-transistor-like structure was used. When a forward bias is applied between the top electrode and the bottom electrode, the detectors can successfully detect W-A and reject UV-B. Under reverse bias, they can detect UV-B and reject UV-A. The proof of concept design shows that it is feasible to fabricate high performance dual-band UV detectors based on the current AlGaN material growth and fabrication technologies.

Inverse opal with an ultraviolet photonic gap

NASA Astrophysics Data System (ADS)

Ni, Peigen; Cheng, Bingying; Zhang, Daozhong

2002-03-01

Photonic crystals composed of TiO2 and air voids fabricated by the template method exhibit an ultraviolet photonic stop band (˜380 nm) in the Γ-L direction. Scanning electron microscopy images show that the inverse opal possesses face-centered-cubic symmetry with a lattice constant of 240 nm. The transmission spectra show that the change in transmittance is one order of magnitude in the gap, which is in accord with the reflection spectrum.

Dimensional-Hybrid Structures of 2D Materials with ZnO Nanostructures via pH-Mediated Hydrothermal Growth for Flexible UV Photodetectors.

PubMed

Lee, Young Bum; Kim, Seong Ku; Lim, Yi Rang; Jeon, In Su; Song, Wooseok; Myung, Sung; Lee, Sun Sook; Lim, Jongsun; An, Ki-Seok

2017-05-03

Complementary combination of heterostructures is a crucial factor for the development of 2D materials-based optoelectronic devices. Herein, an appropriate solution for fabricating complementary dimensional-hybrid nanostructures comprising structurally tailored ZnO nanostructures and 2D materials such as graphene and MoS 2 is suggested. Structural features of ZnO nanostructures hydrothermally grown on graphene and MoS 2 are deliberately manipulated by adjusting the pH value of the growing solution, which will result in the formation of ZnO nanowires, nanostars, and nanoflowers. The detailed growth mechanism is further explored for the structurally tailored ZnO nanostructures on the 2D materials. Furthermore, a UV photodetector based on the dimensional-hybrid nanostructures is fabricated, which demonstrates their excellent photocurrent and mechanical durability. This can be understood by the existence of oxygen vacancies and oxygen-vacancies-induced band narrowing in the ZnO nanostructures, which is a decisive factor for determining their photoelectrical properties in the hybrid system.

Laser-photodetector timing station instruction and maintenance manual

NASA Technical Reports Server (NTRS)

Strader, E. A.

1986-01-01

A laser photodetector station is used for detecting the arrival of a projectile at a specific point along a ballistic range. The system can be employed on either an open or evacuated range, with small projectiles, and at hypervelocities. The setup procedures, maintenance, and system components are described.

Ultraporous Electron-Depleted ZnO Nanoparticle Networks for Highly Sensitive Portable Visible-Blind UV Photodetectors.

PubMed

Nasiri, Noushin; Bo, Renheng; Wang, Fan; Fu, Lan; Tricoli, Antonio

2015-08-05

A hierarchical nano- and microstructured morphology for visible-blind UV photo-detectors is developed, which provides record-high milliampere photocurrents, nanoampere dark currents, and excellent selectivity to ultralow UV light intensities. This is a significant step toward the integration of high-performance UV photodetectors in wearable devices. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Laterally biased structures for room temperature operation of quantum-well infrared photodetectors

NASA Astrophysics Data System (ADS)

Guzmán, Álvaro; Gargallo-Caballero, Raquel; Lü, Xiang; Grahn, Holger T.

2017-11-01

Laterally biased quantum-well infrared photodetectors (LBQWIPs) are expected to exhibit a photoresponse at room temperature. In these devices, the photocurrent is collected by means of two lateral Ohmic contacts on each side of an undoped quantum well (QW), which is coupled by tunneling to another n-doped QW. Photoexcited electrons from the n-doped QW tunnel through to the undoped QW and are swept out via a lateral bias voltage. Up to now, the practical development of these structures has not been yet achieved due to the difficulty of contacting single QWs separated by a few nanometers. In this paper, we report on a viable technology to fabricate LBQWIPs. We present two procedures to contact individual QWs, which are sufficiently close to be coupled by tunneling. The final devices exhibit very low dark-current values and clear infrared absorption peaks at 300 K, in good agreement with the results of numerical simulations. This work demonstrates the practical functionality of the laterally biased structure and paves the way for future developments of room temperature QWIPs.

Color selective photodetector and methods of making

DOEpatents

Walker, Brian J.; Dorn, August; Bulovic, Vladimir; Bawendi, Moungi G.

2013-03-19

A photoelectric device, such as a photodetector, can include a semiconductor nanowire electrostatically associated with a J-aggregate. The J-aggregate can facilitate absorption of a desired wavelength of light, and the semiconductor nanowire can facilitate charge transport. The color of light detected by the device can be chosen by selecting a J-aggregate with a corresponding peak absorption wavelength.

Design and development of SiGe based near-infrared photodetectors

NASA Astrophysics Data System (ADS)

Zeller, John W.; Puri, Yash R.; Sood, Ashok K.; McMahon, Shane; Efsthadiatis, Harry; Haldar, Pradeep; Dhar, Nibir K.

2014-10-01

Near-infrared (NIR) sensors operating at room temperatures are critical for a variety of commercial and military applications including detecting mortar fire and muzzle flashes. SiGe technology offers a low-cost alternative to conventional IR sensor technologies such as InGaAs, InSb, and HgCdTe for developing NIR micro-sensors that will not require any cooling and can operate with high bandwidths and comparatively low dark currents. Since Ge has a larger thermal expansion coefficient than Si, tensile strain may be incorporated into detector devices during the growth process, enabling an extended operating wavelength range above 1600 nm. SiGe based pin photodetectors have advantages of high stability, low noise, and high responsivity compared to metal-semiconductor-metal (MSM) devices. We have developed a process flow and are fabricating SiGe detector devices on 12" (300 mm) silicon wafers in order to take advantage of high throughput, large-area leading-edge silicon based CMOS technology that provides small feature sizes with associated device cost/density scaling advantages. The fabrication of the detector devices is facilitated by a two-step growth process incorporating initial low temperature growth of Ge/SiGe to form a thin strain-relaxed layer, followed by high temperature growth to deposit a thicker absorbing film, and subsequent high temperature anneal. This growth process is designed to effectively reduce dark current and enhance detector performance by reducing the number of defects and threading dislocations which form recombination centers during the growth process. Various characterization techniques have been employed to determine the properties of the epitaxially deposited Ge/SiGe layers, and the corresponding results are discussed.

Extreme ultraviolet and X-ray spectroheliograph for OSO-H

NASA Technical Reports Server (NTRS)

Sterk, A. A.; Kieser, F.; Peck, S.; Knox, E.

1972-01-01

A complex scientific instrument was designed, fabricated, tested, and calibrated for launch onboard OSO-H. This instrument consisted of four spectroheliographs and an X-ray polarimeter. The instrument is designed to study solar radiation at selected wavelengths in the X-ray and the extreme ultraviolet ranges, make observations at the H-alpha wavelength, and measure the degree of polarization of X-ray emissions.

Highly reproducible and reliable metal/graphene contact by ultraviolet-ozone treatment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Wei; Physical Measurement Laboratory, National Institute of Standards and Technology, Gaithersburg, MD 20899; Hacker, Christina A.

2014-03-21

Resist residue from the device fabrication process is a significant source of contamination at the metal/graphene contact interface. Ultraviolet Ozone (UVO) treatment is proven here, by X-ray photoelectron spectroscopy and Raman measurement, to be an effective way of cleaning the metal/graphene interface. Electrical measurements of devices that were fabricated by using UVO treatment of the metal/graphene contact region show that stable and reproducible low resistance metal/graphene contacts are obtained and the electrical properties of the graphene channel remain unaffected.

Barrier Engineered Quantum Dot Infrared Photodetectors

DTIC Science & Technology

2015-06-01

dual-color detectors using InAs/GaSb strained layer superlattices ." In Lester Eastman Conference on High Performance Devices (LEC), 2012, pp. 1-4. IEEE...Gautam, S. S. Krishna, E. P. Smith, S. Johnson, and S. Krishna. "Dual-band pBp detectors based on InAs/GaSb strained layer superlattices ." Infrared ...AFRL-RV-PS- AFRL-RV-PS- TR-2015-0111 TR-2015-0111 BARRIER ENGINEERED QUANTUM DOT INFRARED PHOTODETECTORS Sanjay Krishna Center for High Technology

Bottom-Up Tri-gate Transistors and Submicrosecond Photodetectors from Guided CdS Nanowalls.

PubMed

Xu, Jinyou; Oksenberg, Eitan; Popovitz-Biro, Ronit; Rechav, Katya; Joselevich, Ernesto

2017-11-08

Tri-gate transistors offer better performance than planar transistors by exerting additional gate control over a channel from two lateral sides of semiconductor nanowalls (or "fins"). Here we report the bottom-up assembly of aligned CdS nanowalls by a simultaneous combination of horizontal catalytic vapor-liquid-solid growth and vertical facet-selective noncatalytic vapor-solid growth and their parallel integration into tri-gate transistors and photodetectors at wafer scale (cm 2 ) without postgrowth transfer or alignment steps. These tri-gate transistors act as enhancement-mode transistors with an on/off current ratio on the order of 10 8 , 4 orders of magnitude higher than the best results ever reported for planar enhancement-mode CdS transistors. The response time of the photodetector is reduced to the submicrosecond level, 1 order of magnitude shorter than the best results ever reported for photodetectors made of bottom-up semiconductor nanostructures. Guided semiconductor nanowalls open new opportunities for high-performance 3D nanodevices assembled from the bottom up.

Polarization-independent high-speed photodetector based on a two-dimensional focusing grating

NASA Astrophysics Data System (ADS)

Duan, Xiaofeng; Chen, Hailang; Huang, Yongqing; Liu, Kai; Cai, Shiwei; Ren, Xiaomin

2018-01-01

We demonstrate a reflection-enhanced high-speed photodetector, which integrated a mushroom-mesa p-i-n structure on a two-dimensional (2D) nonperiodic focusing grating. Mushroom-mesa p-i-n photodetectors exhibit a high frequency response owing to their low resistance capacity (RC) time constant. 2D nonperiodic focusing gratings not only can increase the external quantum efficiency of the device owing to their reflecting and focusing abilities, but also are not sensitive to the polarization of the incident light. The external quantum efficiency of this device is 44.71% and the measured 3 dB bandwidth is up to 32 GHz.

Silicon/organic hybrid heterojunction infrared photodetector operating in the telecom regime.

PubMed

Bednorz, Mateusz; Matt, Gebhard J; Głowacki, Eric D; Fromherz, Thomas; Brabec, Christoph J; Scharber, Markus C; Sitter, Helmut; Sariciftci, N Serdar

2013-05-01

The authors report on the fabrication of a silicon/organic heterojunction based IR photodetector. It is demonstrated that an Al/ p -Si/perylene-derivative/Al heterostructure exhibits a photovoltaic effect up to 2.7 μm (0.46 eV), a value significantly lower than the bandgap of either material. Although the devices are not optimized, at room temperature a rise time of 300 ns, a responsivity of ≈0.2 mA/W with a specific detectivity of D ∗  ≈ 7 × 10 7 Jones at 1.55 μm is found. The achieved responsivity is two orders of magnitude higher compared to our previous efforts [1,2]. It will be outlined that the photocurrent originates from an absorption mechanism involving excitation of an electron from the Si valence band into the extended LUMO state in the perylene-derivative, with possible participation of intermediate localized surface state in the organic material. The non-invasive deposition of the organic interlayer onto the Si results in compatibility with the CMOS process, making the presented approach a potential alternative to all inorganic device concepts.

Towards a Graphene-Based Low Intensity Photon Counting Photodetector

PubMed Central

Williams, Jamie O. D.; Alexander-Webber, Jack A.; Lapington, Jon S.; Roy, Mervyn; Hutchinson, Ian B.; Sagade, Abhay A.; Martin, Marie-Blandine; Braeuninger-Weimer, Philipp; Cabrero-Vilatela, Andrea; Wang, Ruizhi; De Luca, Andrea; Udrea, Florin; Hofmann, Stephan

2016-01-01

Graphene is a highly promising material in the development of new photodetector technologies, in particular due its tunable optoelectronic properties, high mobilities and fast relaxation times coupled to its atomic thinness and other unique electrical, thermal and mechanical properties. Optoelectronic applications and graphene-based photodetector technology are still in their infancy, but with a range of device integration and manufacturing approaches emerging this field is progressing quickly. In this review we explore the potential of graphene in the context of existing single photon counting technologies by comparing their performance to simulations of graphene-based single photon counting and low photon intensity photodetection technologies operating in the visible, terahertz and X-ray energy regimes. We highlight the theoretical predictions and current graphene manufacturing processes for these detectors. We show initial experimental implementations and discuss the key challenges and next steps in the development of these technologies. PMID:27563903

Sensitivity of resonant tunneling diode photodetectors.

PubMed

Pfenning, Andreas; Hartmann, Fabian; Langer, Fabian; Kamp, Martin; Höfling, Sven; Worschech, Lukas

2016-09-02

We have studied the sensitivity of AlGaAs/GaAs double barrier resonant tunneling diode photodetectors with an integrated GaInNAs absorption layer for light sensing at the telecommunication wavelength of λ = 1.3 μm for illumination powers from pico- to microwatts. The sensitivity decreases nonlinearly with power. An illumination power increase of seven orders of magnitude leads to a reduction of the photocurrent sensitivity from S I  = 5.82 × 10(3) A W(-1) to 3.2 A W(-1). We attribute the nonlinear sensitivity-power dependence to an altered local electrostatic potential due to hole-accumulation that on the one hand tunes the tunneling current, but on the other hand affects the lifetime of photogenerated holes. In particular, the lifetime decreases exponentially with increasing hole population. The lifetime reduction results from an enhanced electrical field, a rise of the quasi-Fermi level, and an increased energy splitting within the triangular potential well. The non-constant sensitivity is a direct result of the non-constant lifetime. Based on these findings, we provide an expression that allows us to calculate the sensitivity as a function of illumination power and bias voltage, show a way to model the time-resolved photocurrent, and determine the critical power up to which the resonant tunneling diode photodetector sensitivity can be assumed constant.

Photovoltaic cells and photodetectors made with semiconductor polymers: recent progress

NASA Astrophysics Data System (ADS)

Yu, Gang; Srdanov, Gordana; Wang, Hailiang; Cao, Yong; Heeger, Alan J.

2000-05-01

In this presentation, we discuss recent progress on polymer photovoltaic cells and polymer photodetectors. By improving the fill-factor of polymer photovoltaic cells, the energy conversion efficiency was improved significantly to over 4 percent. Such high efficiency polymer photovoltaic cells are promising for many applications including e-papers, e-books and smart-windows. Polymer photodetectors with similar device configuration show high photosensitivity, low dark current, large dynamic range, linear intensity dependence, low noise level and fast response time. These parameters are comparable to or even better than their inorganic counterparts. The advantages of low manufacturing cost, large detection area, and easy hybridization and integration with other electronic or optical components make them promising for a variety of applications including chemical/biomedical analysis, full-color digital image sensing and high energy radiation detection.

Applications of Nanostructured Graphene in Optoelectronics as Transparent Conductors and Photodetectors

NASA Astrophysics Data System (ADS)

Xu, Guowei

Graphene, a single layer of carbon atoms arranged in a hexagonal lattice, has unique properties of high carrier mobility, high optical transmittance, chemical inertness and flexibility, making it attractive for electronic and optoelectronic applications, such as graphene transistors, ultrahigh capacitors, transparent conductors (TCs), photodetectors. This work explores novel schemes of nanostructured graphene for optoelectronic applications including advanced TCs and photodetectors. In nanophotonic graphene nanohole arrays patterned using nanoimprinting lithography (NIL), highly efficient chemical doping was achieved on the hole edges. This provides a unique scheme for improving both optical transmittance and electrical conductivity of graphene-based TCs. In plasmonic graphene, Ag nanoparticles were decorated on graphene using thermally assisted self-assembly and NIL. Much enhanced conductivity by a factor of 2-4 was achieved through electron doping in graphene from Ag nanoparticles. More importantly, surface plasmonic effect has been incorporated into plasmonic graphene as advanced TCs with light trapping, which is critical to ultrathin-film optoelectronics such as photovoltaics and photodetectors. Based on plasmonic graphene electric double-layer (EDL) transistor, a novel scheme of photodetection has been demonstrated using plasmonic enhanced local field gating. The resulting tuning of interfacial capacitance as well as the quantum capacitance of graphene manifested as extraordinary photoconductivity and hence photoresponse.

Bandgap-Engineered Zinc-Tin-Oxide Thin Films for Ultraviolet Sensors.

PubMed

Cheng, Tien-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn

2018-07-01

Zinc-tin-oxide thin-film transistors were prepared by radio frequency magnetron co-sputtering, while an identical zinc-tin-oxide thin film was deposited simultaneously on a clear glass substrate to facilitate measurements of the optical properties. When we adjusted the deposition power of ZnO and SnO2, the bandgap of the amorphous thin film was dominated by the deposition power of SnO2. Since the thin-film transistor has obvious absorption in the ultraviolet region owing to the wide bandgap, the drain current increases with the generation of electron-hole pairs. As part of these investigations, a zinc-tin-oxide thin-film transistor has been fabricated that appears to be very promising for ultraviolet applications.

Progress on type-II InAs/GaSb superlattice (T2SL) infrared photodetector : from MWIR to VLWIR spectral domains

NASA Astrophysics Data System (ADS)

Christol, P.; Rodriguez, J.-B.

2017-11-01

Infrared photodetectors based on type-II InAs/GaSb superlattice (T2SL) material has been given a lot of attention this past decade, in particular by U.S. laboratories. Among the advantages of this material system, one can cite the possibility to span a large Infrared (IR) range (3μm to 30 μm) by tailoring the band-gap independently from the lattice constant, allowing addressing many applications by the same fabrication process and the realization of multi-color IR sensors for high performance imaging systems. Recently, the maturity of the growth of the quantum structure by molecular beam epitaxy (MBE) and progress on the processing resulted in the demonstration of high-performance mega-pixel focal plane arrays (FPA) in both the mid-wavelength (MWIR) and the long-wavelength (LWIR) infrared spectral bands [1]. Consequently, InAs/GaSb T2SL photodetector can be now considered as a new infrared technology which can be complementary to InSb, MCT or QWIPs technologies. After some reminders on InAs/GaSb T2SL quantum structure properties, we present in this communication the results obtained by the IES laboratory, from Montpellier University, France, for photodiodes operating in the MWIR spectral domains. We then complete the paper by the main results reached by others laboratories for T2SL detectors operating from MWIR to VLWIR spectral ranges.

Broad Detection Range Rhenium Diselenide Photodetector Enhanced by (3-Aminopropyl)Triethoxysilane and Triphenylphosphine Treatment.

PubMed

Jo, Seo-Hyeon; Park, Hyung-Youl; Kang, Dong-Ho; Shim, Jaewoo; Jeon, Jaeho; Choi, Seunghyuk; Kim, Minwoo; Park, Yongkook; Lee, Jaehyeong; Song, Young Jae; Lee, Sungjoo; Park, Jin-Hong

2016-08-01

The effects of triphenylphosphine and (3-aminopropyl)triethoxysilane on a rhenium diselenide (ReSe2 ) photodetector are systematically studied by comparing with conventional MoS2 devices. This study demonstrates a very high performance ReSe2 photodetector with high photoresponsivity (1.18 × 10(6) A W(-1) ), fast photoswitching speed (rising/decaying time: 58/263 ms), and broad photodetection range (possible above 1064 nm). © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Metamorphic InAsSb-based Barrier Photodetectors for the Long Wave Infrared Region

DTIC Science & Technology

2013-08-02

The character of the I–V for structures with AlInSb layer grown undoped reflects the complex nature of the potential profile in the valence band ...Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1?xInxSb buffer layers and GaSb substrates by...ABSTRACT InAs0.6Sb0.4/Al0.75In0.25Sb-based barrier photodetectors were grown metamorphically on compositionally graded Ga1?xInxSb buffer layers and GaSb

Composite metal foil and ceramic fabric materials

DOEpatents

Webb, B.J.; Antoniak, Z.I.; Prater, J.T.; DeSteese, J.G.

1992-03-24

The invention comprises new materials useful in a wide variety of terrestrial and space applications. In one aspect, the invention comprises a flexible cloth-like material comprising a layer of flexible woven ceramic fabric bonded with a layer of metallic foil. In another aspect, the invention includes a flexible fluid impermeable barrier comprising a flexible woven ceramic fabric layer having metal wire woven therein. A metallic foil layer is incontinuously welded to the woven metal wire. In yet another aspect, the invention includes a material comprising a layer of flexible woven ceramic fabric bonded with a layer of an organic polymer. In still another aspect, the invention includes a rigid fabric structure comprising a flexible woven ceramic fabric and a resinous support material which has been hardened as the direct result of exposure to ultraviolet light. Inventive methods for producing such material are also disclosed. 11 figs.

Suppression of Lateral Diffusion and Surface Leakage Currents in nBn Photodetectors Using an Inverted Design

NASA Astrophysics Data System (ADS)

Du, X.; Savich, G. R.; Marozas, B. T.; Wicks, G. W.

2018-02-01

Surface leakage and lateral diffusion currents in InAs-based nBn photodetectors have been investigated. Devices fabricated using a shallow etch processing scheme that etches through the top contact and stops at the barrier exhibited large lateral diffusion current but undetectably low surface leakage. Such large lateral diffusion current significantly increased the dark current, especially in small devices, and causes pixel-to-pixel crosstalk in detector arrays. To eliminate the lateral diffusion current, two different approaches were examined. The conventional solution utilized a deep etch process, which etches through the top contact, barrier, and absorber. This deep etch processing scheme eliminated lateral diffusion, but introduced high surface current along the device mesa sidewalls, increasing the dark current. High device failure rate was also observed in deep-etched nBn structures. An alternative approach to limit lateral diffusion used an inverted nBn structure that has its absorber grown above the barrier. Like the shallow etch process on conventional nBn structures, the inverted nBn devices were fabricated with a processing scheme that only etches the top layer (the absorber, in this case) but avoids etching through the barrier. The results show that inverted nBn devices have the advantage of eliminating the lateral diffusion current without introducing elevated surface current.

Capacitively coupled pickup in MCP-based photodetectors using a conductive metallic anode

NASA Astrophysics Data System (ADS)

Angelico, E.; Seiss, T.; Adams, B.; Elagin, A.; Frisch, H.; Spieglan, E.

2017-02-01

We have designed and tested a robust 20×20 cm2 thin metal film internal anode capacitively coupled to an external array of signal pads or micro-strips for use in fast microchannel plate photodetectors. The internal anode, in this case a 10 nm-thick NiCr film deposited on a 96% pure Al2O3 3 mm-thick ceramic plate and connected to HV ground, provides the return path for the electron cascade charge. The multi-channel pickup array consists of a printed-circuit card or glass plate with metal signal pickups on one side and the signal ground plane on the other. The pickup can be put in close proximity to the bottom outer surface of the sealed photodetector, with no electrical connections through the photodetector hermetic vacuum package other than a single ground connection to the internal anode. Two pickup patterns were tested using a small commercial MCP-PMT as the signal source: 1) parallel 50 Ω 25-cm-long micro-strips with an analog bandwidth of 1.5 GHz, and 2) a 20×20 cm2 array of 2-dimensional square 'pads' with sides of 1.27 cm or 2.54 cm. The rise-time of the fast input pulse is maintained for both pickup patterns. For the pad pattern, we observe 80% of the directly coupled amplitude. For the strip pattern we measure 34% of the directly coupled amplitude on the central strip of a broadened signal. The physical decoupling of the photodetector from the pickup pattern allows easy customization for different applications while maintaining high analog bandwidth.

Highly sensitive MoS2 photodetectors with graphene contacts.

PubMed

Han, Peize; St Marie, Luke; Wang, Qing X; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-18

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS 2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 10 14 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS 2 . We study MoS 2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Highly sensitive MoS2 photodetectors with graphene contacts

NASA Astrophysics Data System (ADS)

Han, Peize; St. Marie, Luke; Wang, Qing X.; Quirk, Nicholas; El Fatimy, Abdel; Ishigami, Masahiro; Barbara, Paola

2018-05-01

Two-dimensional materials such as graphene and transition metal dichalcogenides (TMDs) are ideal candidates to create ultra-thin electronics suitable for flexible substrates. Although optoelectronic devices based on TMDs have demonstrated remarkable performance, scalability is still a significant issue. Most devices are created using techniques that are not suitable for mass production, such as mechanical exfoliation of monolayer flakes and patterning by electron-beam lithography. Here we show that large-area MoS2 grown by chemical vapor deposition and patterned by photolithography yields highly sensitive photodetectors, with record shot-noise-limited detectivities of 8.7 × 1014 Jones in ambient condition and even higher when sealed with a protective layer. These detectivity values are higher than the highest values reported for photodetectors based on exfoliated MoS2. We study MoS2 devices with gold electrodes and graphene electrodes. The devices with graphene electrodes have a tunable band alignment and are especially attractive for scalable ultra-thin flexible optoelectronics.

Quadrant photodetector sensitivity.

PubMed

Manojlović, Lazo M

2011-07-10

A quantitative theoretical analysis of the quadrant photodetector (QPD) sensitivity in position measurement is presented. The Gaussian light spot irradiance distribution on the QPD surface was assumed to meet most of the real-life applications of this sensor. As the result of the mathematical treatment of the problem, we obtained, in a closed form, the sensitivity function versus the ratio of the light spot 1/e radius and the QPD radius. The obtained result is valid for the full range of the ratios. To check the influence of the finite light spot radius on the interaxis cross talk and linearity, we also performed a mathematical analysis to quantitatively measure these types of errors. An optimal range of the ratio of light spot radius and QPD radius has been found to simultaneously achieve low interaxis cross talk and high linearity of the sensor. © 2011 Optical Society of America

Latest generation of ASICs for photodetector readout

NASA Astrophysics Data System (ADS)

Seguin-Moreau, N.

2013-08-01

The OMEGA microelectronics group has designed a new generation of multichannel integrated circuits, the "ROC" family, in AustrianMicroSystem (AMS) SiGe 0.35 μm technology to read out signals from various families of photodetectors. The chip named MAROC (standing for Multi Anode ReadOut Chip) has been designed to read out MultiAnode Photomultipliers (MAPMT), Photomultiplier ARray In SiGe ReadOut Chip (PARISROC) to read out Photomultipliers (PMTs) and SiPM Integrated ReadOut Chip (SPIROC) to readout Silicon PhotoMultiplier (SiPM) detectors and which was the first ASIC to do so. The three of them fulfill the stringent requirements of the future photodetectors, in particular in terms of low noise, radiation hardness, large dynamic range, high density and high speed while keeping low power thanks to the SiGe technology. These multi-channel ASICs are real System on Chip (SoC) as they provide charge, time and photon-counting information which are digitized internally. Their complexity and versatility enable innovative frontier detectors and also cover spin off of these detectors in adjacent fields such as medical or material imaging as well as smart detectors. In this presentation, the three ASIC architectures and test results will be described to give a general panorama of the "ROC" chips.

In0.15Ga0.85N visible-light metal-semiconductor-metal photodetector with GaN interlayers deposited by pulsed NH3

NASA Astrophysics Data System (ADS)

Wang, Hongxia; Zhang, Xiaohan; Wang, Hailong; Lv, Zesheng; Li, Yongxian; Li, Bin; Yan, Huan; Qiu, Xinjia; Jiang, Hao

2018-05-01

InGaN visible-light metal-semiconductor-metal photodetectors with GaN interlayers deposited by pulsed NH3 were fabricated and characterized. By periodically inserting the GaN thin interlayers, the surface morphology of InGaN active layer is improved and the phase separation is suppressed. At 5 V bias, the dark current reduced from 7.0 × 10-11 A to 7.0 × 10-13 A by inserting the interlayers. A peak responsivity of 85.0 mA/W was measured at 420 nm and 5 V bias, corresponding to an external quantum efficiency of 25.1%. The insertion of GaN interlayers also lead to a sharper spectral response cutoff.

High-responsivity graphene/InAs nanowire heterojunction near-infrared photodetectors with distinct photocurrent on/off ratios.

PubMed

Miao, Jinshui; Hu, Weida; Guo, Nan; Lu, Zhenyu; Liu, Xingqiang; Liao, Lei; Chen, Pingping; Jiang, Tao; Wu, Shiwei; Ho, Johnny C; Wang, Lin; Chen, Xiaoshuang; Lu, Wei

2015-02-25

Graphene is a promising candidate material for high-speed and ultra-broadband photodetectors. However, graphene-based photodetectors suffer from low photoreponsivity and I(light)/I(dark) ratios due to their negligible-gap nature and small optical absorption. Here, a new type of graphene/InAs nanowire (NW) vertically stacked heterojunction infrared photodetector is reported, with a large photoresponsivity of 0.5 AW(-1) and I(light)/I(dark) ratio of 5 × 10(2), while the photoresponsivity and I(light)/I(dark) ratio of graphene infrared photodetectors are 0.1 mAW(-1) and 1, respectively. The Fermi level (E(F)) of graphene can be widely tuned by the gate voltage owing to its 2D nature. As a result, the back-gated bias can modulate the Schottky barrier (SB) height at the interface between graphene and InAs NWs. Simulations further demonstrate the rectification behavior of graphene/InAs NW heterojunctions and the tunable SB controls charge transport across the vertically stacked heterostructure. The results address key challenges for graphene-based infrared detectors, and are promising for the development of graphene electronic and optoelectronic applications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Downsampling Photodetector Array with Windowing

NASA Technical Reports Server (NTRS)

Patawaran, Ferze D.; Farr, William H.; Nguyen, Danh H.; Quirk, Kevin J.; Sahasrabudhe, Adit

2012-01-01

In a photon counting detector array, each pixel in the array produces an electrical pulse when an incident photon on that pixel is detected. Detection and demodulation of an optical communication signal that modulated the intensity of the optical signal requires counting the number of photon arrivals over a given interval. As the size of photon counting photodetector arrays increases, parallel processing of all the pixels exceeds the resources available in current application-specific integrated circuit (ASIC) and gate array (GA) technology; the desire for a high fill factor in avalanche photodiode (APD) detector arrays also precludes this. Through the use of downsampling and windowing portions of the detector array, the processing is distributed between the ASIC and GA. This allows demodulation of the optical communication signal incident on a large photon counting detector array, as well as providing architecture amenable to algorithmic changes. The detector array readout ASIC functions as a parallel-to-serial converter, serializing the photodetector array output for subsequent processing. Additional downsampling functionality for each pixel is added to this ASIC. Due to the large number of pixels in the array, the readout time of the entire photodetector is greater than the time between photon arrivals; therefore, a downsampling pre-processing step is done in order to increase the time allowed for the readout to occur. Each pixel drives a small counter that is incremented at every detected photon arrival or, equivalently, the charge in a storage capacitor is incremented. At the end of a user-configurable counting period (calculated independently from the ASIC), the counters are sampled and cleared. This downsampled photon count information is then sent one counter word at a time to the GA. For a large array, processing even the downsampled pixel counts exceeds the capabilities of the GA. Windowing of the array, whereby several subsets of pixels are designated

The polarization-optical measuring method of linearity of radiant-power characteristic of the laser emission photodetectors

NASA Astrophysics Data System (ADS)

Baranov, M. S.; Khramov, V. N.; Chebanenko, R. A.

2016-04-01

The method of measurement of the power (lux-ampere) characteristic of photodetectors for work with the continuous laser sources of light which radiation has the linear polarization is developed and realized. The way offered in this work is approved on the basis of the FD-24K widespread photo diode. The received results quite correspond to passport data of this kind of photodetectors. Methods of statistical processing of results are applied.

System and method for optical monitoring of a combustion flame

DOEpatents

Brown, Dale M; Sandvik, Peter M; Fedison, Jeffrey B; Matocha, Kevin S; Johnson, Thomas E

2006-09-26

An optical spectrometer for combustion flame temperature determination includes at least two photodetectors positioned for receiving light from a combustion flame, each of the at least two photodetectors having a different, overlapping bandwidth for detecting a respective output signal in an ultraviolet emission band; and a computer for subtracting a respective output signal of a first one of the at least two photodetectors from a respective output signal of a second one of the at least two photodetectors to obtain a segment signal, and using the segment signal to determine the combustion flame temperature.

Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Starkenburg, Daken J.; Johns, Paul M.; Baciak, James E.

Here, developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced frommore » an X-ray generator, SubPc:C 60, AlPcCl:C 70, and P3HT:PC 61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.28 µGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy -1 cm -2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.« less

Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

NASA Astrophysics Data System (ADS)

Starkenburg, Daken J.; Johns, Paul M.; Baciak, James E.; Nino, Juan C.; Xue, Jiangeng

2017-12-01

Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from an X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.18 μGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.

Thin film organic photodetectors for indirect X-ray detection demonstrating low dose rate sensitivity at low voltage operation

DOE PAGES

Starkenburg, Daken J.; Johns, Paul M.; Baciak, James E.; ...

2017-12-14

Developments in the field of organic semiconductors have generated organic photodetectors with high quantum efficiency, wide spectral sensitivity, low power consumption, and unique form factors that are flexible and conformable to their substrate shape. In this work, organic photodetectors coupled with inorganic CsI(Tl) scintillators are used to showcase the low dose rate sensitivity that is enabled when high performance organic photodetectors and scintillator crystals are integrated. The detection capability of these organic-inorganic coupled systems to high energy radiation highlights their potential as an alternative to traditional photomultiplier tubes for nuclear spectroscopy applications. When exposed to Bremsstrahlung radiation produced from anmore » X-ray generator, SubPc:C60, AlPcCl:C70, and P3HT:PC61BM thin film photodetectors with active layer thicknesses less than 100 nm show detection of incident radiation at low and no applied bias. Remarkably low dose rates, down to at least 0.28 µGy/s, were detectable with a characteristic linear relationship between exposure rate and photodetector current output. These devices also demonstrate sensitivities as high as 5.37 mC Gy-1 cm-2 when coupled to CsI(Tl). Additionally, as the tube voltage across the X-ray generator was varied, these organic-inorganic systems showed their ability to detect a range of continuous radiation spectra spanning several hundred keV.« less

Strong enhancement of photoresponsivity with shrinking the electrodes spacing in few layer GaSe photodetectors

PubMed Central

Cao, Yufei; Cai, Kaiming; Hu, Pingan; Zhao, Lixia; Yan, Tengfei; Luo, Wengang; Zhang, Xinhui; Wu, Xiaoguang; Wang, Kaiyou; Zheng, Houzhi

2015-01-01

A critical challenge for the integration of optoelectronics is that photodetectors have relatively poor sensitivities at the nanometer scale. Generally, a large electrodes spacing in photodetectors is required to absorb sufficient light to maintain high photoresponsivity and reduce the dark current. However, this will limit the optoelectronic integration density. Through spatially resolved photocurrent investigation, we find that the photocurrent in metal-semiconductor-metal (MSM) photodetectors based on layered GaSe is mainly generated from the region close to the metal-GaSe interface with higher electrical potential. The photoresponsivity monotonically increases with shrinking the spacing distance before the direct tunneling happens, which was significantly enhanced up to 5,000 AW−1 for the bottom Ti/Au contacted device. It is more than 1,700-fold improvement over the previously reported results. The response time of the Ti/Au contacted devices is about 10–20 ms and reduced down to 270 μs for the devices with single layer graphene as metallic electrodes. A theoretical model has been developed to well explain the photoresponsivity for these two types of device configurations. Our findings realize reducing the size and improving the performance of 2D semiconductor based MSM photodetectors simultaneously, which could pave the way for future high density integration of optoelectronics with high performances. PMID:25632886

High-speed receiver based on waveguide germanium photodetector wire-bonded to 90nm SOI CMOS amplifier.

PubMed

Pan, Huapu; Assefa, Solomon; Green, William M J; Kuchta, Daniel M; Schow, Clint L; Rylyakov, Alexander V; Lee, Benjamin G; Baks, Christian W; Shank, Steven M; Vlasov, Yurii A

2012-07-30

The performance of a receiver based on a CMOS amplifier circuit designed with 90nm ground rules wire-bonded to a waveguide germanium photodetector is characterized at data rates up to 40Gbps. Both chips were fabricated through the IBM Silicon CMOS Integrated Nanophotonics process on specialty photonics-enabled SOI wafers. At the data rate of 28Gbps which is relevant to the new generation of optical interconnects, a sensitivity of -7.3dBm average optical power is demonstrated with 3.4pJ/bit power-efficiency and 0.6UI horizontal eye opening at a bit-error-rate of 10(-12). The receiver operates error-free (bit-error-rate < 10(-12)) up to 40Gbps with optimized power supply settings demonstrating an energy efficiency of 1.4pJ/bit and 4pJ/bit at data rates of 32Gbps and 40Gbps, respectively, with an average optical power of -0.8dBm.

Surface/Interface Carrier-Transport Modulation for Constructing Photon-Alternative Ultraviolet Detectors Based on Self-Bending-Assembled ZnO Nanowires.

PubMed

Guo, Zhen; Zhou, Lianqun; Tang, Yuguo; Li, Lin; Zhang, Zhiqi; Yang, Hongbo; Ma, Hanbin; Nathan, Arokia; Zhao, Dongxu

2017-09-13

Surface/interface charge-carrier generation, diffusion, and recombination/transport modulation are especially important in the construction of photodetectors with high efficiency in the field of nanoscience. In the paper, a kind of ultraviolet (UV) detector is designed based on ZnO nanostructures considering photon-trapping, surface plasmonic resonance (SPR), piezophototronic effects, interface carrier-trapping/transport control, and collection. Through carefully optimized surface/interface carrier-transport modulation, a designed device with detectivity as high as 1.69 × 10 16 /1.71 × 10 16 cm·Hz 1/2 /W irradiating with 380 nm photons under ultralow bias of 0.2 V is realized by alternating nanoparticle/nanowire active layers, respectively, and the designed UV photodetectors show fast and slow recovery processes of 0.27 and 4.52 ms, respectively, which well-satisfy practical needs. Further, it is observed that UV photodetection could be performed within an alternative response by varying correlated key parameters, through efficient surface/interface carrier-transport modulation, spectrally resolved photoresponse of the detector revealing controlled detection in the UV region based on the ZnO nanomaterial, photodetection allowed or limited by varying the active layers, irradiation distance from one of the electrodes, standing states, or electric field. The detailed carrier generation, diffusion, and recombination/transport processes are well illustrated to explain charge-carrier dynamics contributing to the photoresponse behavior.

Steady-State Vacuum Ultraviolet Exposure Facility With Automated Lamp Calibration and Sample Positioning Fabricated

NASA Technical Reports Server (NTRS)

Sechkar, Edward A.; Steuber, Thomas J.; Banks, Bruce A.; Dever, Joyce A.

2000-01-01

The Next Generation Space Telescope (NGST) will be placed in an orbit that will subject it to constant solar radiation during its planned 10-year mission. A sunshield will be necessary to passively cool the telescope, protecting it from the Sun s energy and assuring proper operating temperatures for the telescope s instruments. This sunshield will be composed of metalized polymer multilayer insulation with an outer polymer membrane (12 to 25 mm in thickness) that will be metalized on the back to assure maximum reflectance of sunlight. The sunshield must maintain mechanical integrity and optical properties for the full 10 years. This durability requirement is most challenging for the outermost, constantly solar-facing polymer membrane of the sunshield. One of the potential threats to the membrane material s durability is from vacuum ultraviolet (VUV) radiation in wavelengths below 200 nm. Such radiation can be absorbed in the bulk of these thin polymer membrane materials and degrade the polymer s optical and mechanical properties. So that a suitable membrane material can be selected that demonstrates durability to solar VUV radiation, ground-based testing of candidate materials must be conducted to simulate the total 10- year VUV exposure expected during the Next Generation Space Telescope mission. The Steady State Vacuum Ultraviolet exposure facility was designed and fabricated at the NASA Glenn Research Center at Lewis Field to provide unattended 24-hr exposure of candidate materials to VUV radiation of 3 to 5 times the Sun s intensity in the wavelength range of 115 to 200 nm. The facility s chamber, which maintains a pressure of approximately 5 10(exp -6) torr, is divided into three individual exposure cells, each with a separate VUV source and sample-positioning mechanism. The three test cells are separated by a water-cooled copper shield plate assembly to minimize thermal effects from adjacent test cells. Part of the interior sample positioning mechanism of one

High-Performance Near-Infrared Photodetectors Based on p-type SnX (X=S, Se) Nanowires Grown via Chemical Vapor Deposition.

PubMed

Zheng, Dingshan; Fang, Hehai; Long, Mingsheng; Wu, Feng; Wang, Peng; Gong, Fan; Wu, Xing; Ho, Johnny C; Liao, Lei; Hu, Weida

2018-06-21

Because of the distinct electronic properties and strong interaction with light, quasi-one-dimensional nanowires (NWs) with semiconducting property have been demonstrated with tremendous potential for various technological applications, especially electronics and optoelectronics. However, until now, most of the state-of-the-art NW photodetectors are predominantly based on the N-type NW channel. Here, we successfully synthesized P-type SnSe and SnS NWs via chemical vapor deposition method and fabricated high-performance single SnSe and SnS NW photodetectors. Importantly, these two NW devices exhibit the impressive photodetection performance with the high photoconductive gain of 1.5 × 10 4 (2.8 × 10 4 ), good responsivity of 1.0× 10 4 A W -1 (1.6× 10 4 A W -1 ) as well as excellent detectivity of 3.3 × 10 12 Jones (2.4 × 10 12 Jones) under near-infrared illumination at a bias of 3 V for the SnSe NW (SnS NW) channel. The rise and fall times can be as efficient as 460 and 520 μs (1.2 and 15.1 ms), respectively, for the SnSe NW (SnS NW) device. Moreover, the spatially resolved photocurrent mapping of the devices further reveals the bias-dependent photocurrent generation. All these results evidently demonstrate that the P-type SnSe and SnS NWs have great potential to be applied in next-generation high-performance optoelectronic devices.

Ultraviolet Extensions

NASA Technical Reports Server (NTRS)

2008-01-01

[figure removed for brevity, see original site] Side-by-Side Comparison Click on image for larger view

This ultraviolet image from NASA's Galaxy Evolution Explorer shows the Southern Pinwheel galaxy, also know as Messier 83 or M83. It is located 15 million light-years away in the southern constellation Hydra.

Ultraviolet light traces young populations of stars; in this image, young stars can be seen way beyond the main spiral disk of M83 up to 140,000 light-years from its center. Could life exist around one of these far-flung stars? Scientists say it's unlikely because the outlying regions of a galaxy are lacking in the metals required for planets to form.

The image was taken at scheduled intervals between March 15 and May 20, 2007. It is one of the longest-exposure, or deepest, images ever taken of a nearby galaxy in ultraviolet light. Near-ultraviolet light (or longer-wavelength ultraviolet light) is colored yellow, and far-ultraviolet light is blue.

What Lies Beyond the Edge of a Galaxy The side-by-side comparison shows the Southern Pinwheel galaxy, or M83, as seen in ultraviolet light (right) and at both ultraviolet and radio wavelengths (left). While the radio data highlight the galaxy's long, octopus-like arms stretching far beyond its main spiral disk (red), the ultraviolet data reveal clusters of baby stars (blue) within the extended arms.

The ultraviolet image was taken by NASA's Galaxy Evolution Explorer between March 15 and May 20, 2007, at scheduled intervals. Back in 2005, the telescope first photographed M83 over a shorter period of time. That picture was the first to reveal far-flung baby stars forming up to 63,000 light-years from the edge of the main spiral disk. This came as a surprise to astronomers because a galaxy's outer territory typically lacks high densities of star-forming materials.

The newest picture of M83 from the Galaxy Evolution Explorer is shown at the right, and was taken over a longer period of

High-quality infrared imaging with graphene photodetectors at room temperature.

PubMed

Guo, Nan; Hu, Weida; Jiang, Tao; Gong, Fan; Luo, Wenjin; Qiu, Weicheng; Wang, Peng; Liu, Lu; Wu, Shiwei; Liao, Lei; Chen, Xiaoshuang; Lu, Wei

2016-09-21

Graphene, a two-dimensional material, is expected to enable broad-spectrum and high-speed photodetection because of its gapless band structure, ultrafast carrier dynamics and high mobility. We demonstrate a multispectral active infrared imaging by using a graphene photodetector based on hybrid response mechanisms at room temperature. The high-quality images with optical resolutions of 418 nm, 657 nm and 877 nm and close-to-theoretical-limit Michelson contrasts of 0.997, 0.994, and 0.996 have been acquired for 565 nm, 1550 nm, and 1815 nm light imaging measurements by using an unbiased graphene photodetector, respectively. Importantly, by carefully analyzing the results of Raman mapping and numerical simulations for the response process, the formation of hybrid photocurrents in graphene detectors is attributed to the synergistic action of photovoltaic and photo-thermoelectric effects. The initial application to infrared imaging will help promote the development of high performance graphene-based infrared multispectral detectors.

Growth control and design principles of self-assembled quantum dot multiple layer structures for photodetector applications

NASA Astrophysics Data System (ADS)

Asano, Tetsuya

significantly reduced by factor of ˜ 20. Thus, employing MEE growth for GaAs spacer layers in n--i(20-period MQD)-- n QDIP structures, electrons could be provided to all the SAQDs owing to the significantly reduced deep trap density. Finally, for enhancement of the incident photon absorption, we designed and fabricated asymmetric Fabry-Perot resonant cavity-enhanced QDIPs. For effective enhancement, SAQDs with a narrow photoresponse in the 3 -- 5 mum infrared regime were realized utilizing [(AlAs)1(GaAs)4]4 short-period superlattices as the confining barrier layers. Incorporating such SAQDs in RC-QDIPs, we successfully demonstrated ˜ 10 times enhancement of the QDIP detectivity. As stated above, this makes RC-QDIPs containing QDIPs with the currently demonstrated detectivities of ˜ 1010 cmHz 1/2/W at ˜ 77 K competitive with other IR photodetector technologies.

Development of an amorphous selenium based photoconductor and its application in a high-sensitivity photodetector (Conference Presentation)

NASA Astrophysics Data System (ADS)

Masuzawa, Tomoaki; Ebisudani, Taishi; Ochiai, Jun; Saito, Ichitaro; Yamada, Takatoshi; Chua, Daniel H. C.; Mimura, Hidenori; Okano, Ken

2016-09-01

Although present imaging devices are mostly silicon-based devices such as CMOS and CCD, these devices are reaching their sensitivity limit due to the band gap of silicon. Amorphous selenium (a-Se) is a promising candidate for high- sensitivity photo imaging devices, because of its low thermal noise, high spatial resolution, as well as adaptability to wide-area deposition. In addition, internal signal amplification is reported on a-Se based photodetectors, which enables a photodetector having effective quantum efficiency over 100 % against visible light. Since a-Se has sensitivity to UV and soft X-rays, the reported internal signal amplification should be applicable to UV and X-ray detection. However, application of the internal signal amplification required high voltage, which caused unexpected breakdown at the contact or thin-film transistor-based signal read-out. For this reason, vacuum devices having electron-beam read-out is proposed. The advantages of vacuum-type devices are vacuum insulation and its extremely low dark current. In this study, we present recent progresses in developing a-Se based photoconductive films and photodetector using nitrogen-doped diamond electron beam source as signal read-out. A novel electrochemical method is used to dope impurities into a-Se, turning the material from weak p-type to n-type. A p-n junction is formed within a-Se photoconductive film, which has increased the sensitivity of a-Se based photodetector. Our result suggests a possibility of high sensitivity photodetector that can potentially break the limit of silicon-based devices.

MCP-based photodetectors for cryogenic applications

DOE PAGES

Dharmapalan, R.; Mane, A.; Byrum, K.; ...

2016-02-08

The Argonne MCP-based photo detector is an offshoot of the Large Area Pico-second Photo Detector (LAPPD) project, wherein 6 cm × 6 cm sized detectors are made at Argonne National Laboratory. We have successfully built and tested our first detectors for pico-second timing and few mm spatial resolution. We discuss our efforts to customize these detectors to operate in a cryogenic environment. Initial plans aim to operate in liquid argon. As a result, we are also exploring ways to mitigate wave length shifting requirements and also developing bare-MCP photodetectors to operate in a gaseous cryogenic environment.

Uncooled EuSbTe3 photodetector highly sensitive from ultraviolet to terahertz frequencies

NASA Astrophysics Data System (ADS)

Niu, Ying Y.; Wu, Dong; Su, Yu Q.; Zhu, Hai; Wang, Biao; Wang, Ying X.; Zhao, Zi R.; Zheng, Ping; Niu, Jia S.; Zhou, Hui B.; Wei, Jian; Wang, Nan L.

2018-01-01

Light probe from Uv to THz is critical in photoelectronics and has great applications ranging from imaging, communication to medicine (Woodward et al 2002 Phys. Med. Biol. 47 3853-63 Pospischil et al 2013 Nat. Photon. 7 892-6 Martyniuk and Rogalski 2003 Prog. Quantum Electron. 27 59-210). However, the room temperature ultrabroadband photodetection across visible down to far-infrared is still challenging. The challenging arises mainly from the lack of suitable photoactive materials. Because that conventional semiconductors, such as silicon, have their photosensitive properties cut off by the bandgap and are transparent to spectrum at long-wavelength infrared side (Ciupa and Rogalski 1997 Opto-Electron. Rev. 5 257-66 Tonouchi 2007 Nat. Photon. 1 97-105 Sizov and Rogalski 2010 Prog. Quantum Electron. 34 278-347 Kinch 2000 J. Electron. Mater. 29 809-17). Comparatively, the dielectrics with very narrow band-gap but maintain the semiconductor-like electrical conduction would have priorities for ultrabroadband photodetection. Here we report on EuSbTe3 is highly sensitive from ultraviolet directly to terahertz (THz) at room temperature. High photoresponsivities 1-8 A W-1 reached in our prototype EuSbTe3 detectors with low noise equivalent power (NEP) recorded, for instances ~150 pW · Hz-1/2 (at λ  =  532 nm) and ~0.6 nW · Hz-1/2 (at λ  =  118.8 µm) respectively. Our results demonstrate a promising system with direct photosensitivity extending well into THz regime at room temperature, shed new light on exploring more sophisticated multi-band photoelectronics.