Surface structuring of boron doped CVD diamond by micro electrical discharge machining

NASA Astrophysics Data System (ADS)

Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

2018-05-01

Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

Diamond nanoparticles as a support for Pt and PtRu catalysts for direct methanol fuel cells.

PubMed

La-Torre-Riveros, Lyda; Guzman-Blas, Rolando; Méndez-Torres, Adrián E; Prelas, Mark; Tryk, Donald A; Cabrera, Carlos R

2012-02-01

Diamond in nanoparticle form is a promising material that can be used as a robust and chemically stable catalyst support in fuel cells. It has been studied and characterized physically and electrochemically, in its thin film and powder forms, as reported in the literature. In the present work, the electrochemical properties of undoped and boron-doped diamond nanoparticle electrodes, fabricated using the ink-paste method, were investigated. Methanol oxidation experiments were carried out in both half-cell and full fuel cell modes. Platinum and ruthenium nanoparticles were chemically deposited on undoped and boron doped diamond nanoparticles through the use of NaBH(4) as reducing agent and sodium dodecyl benzene sulfonate (SDBS) as a surfactant. Before and after the reduction process, samples were characterized by electron microscopy and spectroscopic techniques. The ink-paste method was also used to prepare the membrane electrode assembly with Pt and Pt-Ru modified undoped and boron-doped diamond nanoparticle catalytic systems, to perform the electrochemical experiments in a direct methanol fuel cell system. The results obtained demonstrate that diamond supported catalyst nanomaterials are promising for methanol fuel cells.

The use of CVD diamond burs for ultraconservative cavity preparations: a report of two cases.

PubMed

Carvalho, Carlos Augusto R; Fagundes, Ticiane C; Barata, Terezinha J E; Trava-Airoldi, Vladimir Jesus; Navarro, Maria Fidela L

2007-01-01

During the past decades, scientific developments in cutting instruments have changed the conventional techniques used to remove caries lesions. Ultrasound emerged as an alternative for caries removal since the 1950s. However, the conventional technology for diamond powder aggregation with nickel metallic binders could not withstand ultrasonic power. Around 5 years ago, an alternative approach using chemical vapor deposition (CVD) resulted in synthetic diamond technology. CVD diamond burs are obtained with high adherence of the diamond as a unique stone on the metallic surface with excellent abrading performance. This technology allows for diamond deposition with coalescent granulation in different formats of substrates. When connected to an ultrasonic handpiece, CVD diamond burs become an option for cavity preparation, maximizing preservation of tooth structure. Potential advantages such as reduced noise, minimal damage to the gingival tissue, extended bur durability, improved proximal cavity access, reduced risk of hitting the adjacent tooth resulting from the high inclination angles, and minimal patient's risk of metal contamination. These innovative instruments also potentially eliminate some problems regarding decreased cutting efficiency of conventional diamond burs. This clinical report presents the benefits of using CVD diamond burs coupled with an ultrasonic handpiece in the treatment of incipient caries. CVD diamond burs coupled with an ultrasonic device offer a promising alternative for removal of carious lesions when ultraconservative cavity preparations are required. Additionally, this system provides a less-painful technique for caries removal, with minimal noise.

Nanocrystalline diamond micro-anvil grown on single crystal diamond as a generator of ultra-high pressures

DOE PAGES

Samudrala, Gopi K.; Moore, Samuel L.; Velisavljevic, Nenad; ...

2016-09-29

By combining mask-less lithography and chemical vapor deposition (CVD) techniques, a novel two-stage diamond anvil has been fabricated. A nanocrystalline diamond (NCD) micro-anvil 30 μm in diameter was grown at the center of a [100]-oriented, diamond anvil by utilizing microwave plasma CVD method. The NCD micro-anvil has a diamond grain size of 115 nm and micro-focused Raman and X-ray Photoelectron spectroscopy analysis indicate sp3-bonded diamond content of 72%. Lastly, these CVD grown NCD micro-anvils were tested in an opposed anvil configuration and the transition metals osmium and tungsten were compressed to high pressures of 264 GPa in a diamond anvilmore » cell.« less

Comparison of the quality of single-crystal diamonds grown on two types of seed substrates by MPCVD

NASA Astrophysics Data System (ADS)

Zhao, Yun; Guo, Yanzhao; Lin, Liangzhen; Zheng, Yuting; Hei, Lifu; Liu, Jinlong; Wei, Junjun; Chen, Liangxian; Li, Chengming

2018-06-01

Microwave plasma chemical vapor deposition (MPCVD) was used to grow single-crystal diamonds on two types of single-crystal diamond seed substrates prepared by high-pressure, high-temperature (HPHT) and chemical vapor deposition (CVD) methods. The quality of diamonds grown on the different seed substrates was compared. Fluorescence characteristics showed that the sectors of the HPHT seed substrates were obviously partitioned. Raman and absorption spectra showed that the CVD seed substrate produced higher-quality crystals with fewer nitrogen impurities. X-ray topography showed that the HPHT seed substrate had obvious growth sector boundaries, inclusions, dislocations, and stacking faults. The polarization characteristics of HPHT seed substrate were obvious, and the stress distribution was not uniform. When etching HPHT and CVD seed substrates using the same parameters, the etching morphology and extent of different growth sectors of the two substrates differed. Although extended defects were inevitably formed at the interface and propagated in the CVD layer, the dislocation density of a 1 mm-thick CVD layer grown on a CVD seed substrate was only half that of a 1 mm-thick CVD layer grown on an HPHT seed substrate. Therefore, the use of CVD seed substrate enabled the growth of a relatively higher-quality CVD single-crystal diamond.

Electrical applications of CVD diamond films

NASA Astrophysics Data System (ADS)

Fujimori, Naoji

Electronics applications of CVD diamond films are reported. The properties of epitaxial diamond films are affected by the orientation of the substrate and the deposition conditions. Boron-doped epitaxial films are found to have the same characteristics as natural IIb diamonds. An LED and an FET were successfully fabricated using boron-doped epitaxial films and Schottky junctions. However, these devices did not exhibit satisfactory properties. Other applications of CVD diamond films include speaker diaphragms (as both a thin-film coating and a free-standing film), and as an ideal packaging material (due to its high thermal conductivity and low dielectric constant).

LASER APPLICATIONS AND OTHER TOPICS IN QUANTUM ELECTRONICS: Measurement of optical absorption in polycrystalline CVD diamond plates by the phase photothermal method at a wavelength of 10.6 μm

NASA Astrophysics Data System (ADS)

Luk'yanov, A. Yu; Ral'chenko, Viktor G.; Khomich, A. V.; Serdtsev, E. V.; Volkov, P. V.; Savel'ev, A. V.; Konov, Vitalii I.

2008-12-01

A highly-efficient phase photothermal method is developed for quantitative measurements of the small optical absorption coefficient in thin plates made of highly transparent materials in which bulk losses significantly exceed surface losses. The bulk absorption coefficient at 10.6 μm is estimated in polycrystalline diamond plates grown from the vapour phase (a CVD diamond). The results are compared with those for natural and synthetic diamond single crystals and with the concentrations of nitrogen and hydrogen impurities. The absorption coefficient of the best samples of the CVD diamond did not exceed 0.06 cm-1, which, taking into account the high thermal conductivity of the CVD diamond (1800-2200 W mK-1 at room temperature), makes this material attractive for fabricating output windows of high-power CO2 lasers, especially for manufacturing large-size optics.

CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1998-01-01

When the main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) mm(exp 3)/N-m, respectively, carbon- and nitrogen-ion-implanted, fine-grain CVD diamond and DLC ion beam deposited on fine-grain CVD diamond met the requirements regardless of environment (vacuum, nitrogen, and air).

CVD diamond pixel detectors for LHC experiments

NASA Astrophysics Data System (ADS)

Wedenig, R.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; Blanquart, L.; Breugnion, P.; Charles, E.; Ciocio, A.; Clemens, J. C.; Dao, K.; Einsweiler, K.; Fasching, D.; Fischer, P.; Joshi, A.; Keil, M.; Klasen, V.; Kleinfelder, S.; Laugier, D.; Meuser, S.; Milgrome, O.; Mouthuy, T.; Richardson, J.; Sinervo, P.; Treis, J.; Wermes, N.; RD42 Collaboration

1999-08-01

This paper reviews the development of CVD diamond pixel detectors. The preparation of the diamond pixel sensors for bump-bonding to the pixel readout electronics for the LHC and the results from beam tests carried out at CERN are described.

Ultratough single crystal boron-doped diamond

DOEpatents

Hemley, Russell J [Carnegie Inst. for Science, Washington, DC ; Mao, Ho-Kwang [Carnegie Inst. for Science, Washington, DC ; Yan, Chih-Shiue [Carnegie Inst. for Science, Washington, DC ; Liang, Qi [Carnegie Inst. for Science, Washington, DC

2015-05-05

The invention relates to a single crystal boron doped CVD diamond that has a toughness of at least about 22 MPa m.sup.1/2. The invention further relates to a method of manufacturing single crystal boron doped CVD diamond. The growth rate of the diamond can be from about 20-100 .mu.m/h.

CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Miyake, Shojiro; Wu, Richard L. C.

1998-01-01

The main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) cubic MM /(N*m), respectively. Carbon- and nitrogen-ion-implanted, fine-grain, chemical-vapor-deposited (CVD) diamond and diamondlike carbon (DLC) ion beam deposited on fine-grain CVD diamond met the criteria regardless of environment (vacuum, nitrogen, and air).

Tribological Characteristics and Applications of Superhard Coatings: CVD Diamond, DLC, and c-BN

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Wu, Richard L. C.

1999-01-01

Results of fundamental research on the tribological properties of chemical-vapor-deposited (CVD) diamond, diamondlike carbon, and cubic boron nitride films in sliding contact with CVD diamond in ultrahigh vacuum, dry nitrogen, humid air, and water are discussed. Furthermore, the actual and potential applications of the three different superhard coatings in the field of tribology technology, particularly for wear parts and tools, are reviewed.

Selected Topics in CVD Diamond Research

NASA Astrophysics Data System (ADS)

Koizumi, Satoshi; Nebel, Christoph E.; Nesladek, Milos

2006-10-01

Since the discovery of Chemical Vapor Deposition (CVD) diamond growth in 1976, the steady scientific progress often resulted in surprising new discoveries and breakthroughs. This brought us to the idea to publish the special issue Selected Topics in CVD Diamond Research in physica status solidi (a), reflecting such advancements and interesting results at the leading edge of diamond research.The present issue summarizes this progress in the CVD diamond field by selecting contributions from several areas such as superconductivity, super-excitonic radiation, quantum computing, bio-functionalization, surface electronic properties, the nature of phosphorus doping, transport properties in high energy detectors, CVD growth and properties of nanocrystalline diamond. In all these directions CVD diamond appears to be very competitive in comparison with other semiconducting materials.As Editors of this special issue, we must admit that the selection is biased by our opinion. Nonetheless, we are sure that each contribution introduces new ideas and results which will improve the understanding of the current level of physics and chemistry of this attractive wide-bandgap semiconductor and which will help to bring it closer to applications.All submissions were invited based on the contributions of the authors to their specific research field. The Feature Articles have the format of topical reviews to give the reader a comprehensive summary. Partially, however, they are written in research paper style to report new results of ongoing research.We hope that this issue will attract the attention of a broad community of scientists and engineers, and that it will facilitate the utilization of diamond in electronic applications and technologies of the future.

Development of CVD Diamond for Industrial Applications Final Report CRADA No. TC-2047-02

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caplan, M.; Olstad, R.; Jory, H.

2017-09-08

This project was a collaborative effort to develop and demonstrate a new millimeter microwave assisted chemical vapor deposition(CVD) process for manufacturing large diamond disks with greatly reduced processing times and costs from those now available. In the CVD process, carbon based gases (methane) and hydrogen are dissociated into plasma using microwave discharge and then deposited layer by layer as polycrystalline diamond onto a substrate. The available low frequency (2.45GHz) microwave sources used elsewhere (De Beers) result in low density plasmas and low deposition rates: 4 inch diamond disks take 6-8 weeks to process. The new system developed in this projectmore » uses a high frequency 30GHz Gyrotron as the microwave source and a quasi-optical CVD chamber resulting in a much higher density plasma which greatly reduced the diamond processing times (1-2 weeks)« less

Study of the triton-burnup process in different JET scenarios using neutron monitor based on CVD diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nemtsev, G., E-mail: g.nemtsev@iterrf.ru; Amosov, V.; Meshchaninov, S.

We present the results of analysis of triton burn-up process using the data from diamond detector. Neutron monitor based on CVD diamond was installed in JET torus hall close to the plasma center. We measure the part of 14 MeV neutrons in scenarios where plasma current varies in a range of 1-3 MA. In this experiment diamond neutron monitor was also able to detect strong gamma bursts produced by runaway electrons arising during the disruptions. We can conclude that CVD diamond detector will contribute to the study of fast particles confinement and help predict the disruption events in future tokamaks.

A comparative study of the thermoluminescent response to beta irradiation of CVD diamond and LiF dosimeters

NASA Astrophysics Data System (ADS)

Bogani, F.; Borchi, E.; Bruzzi, M.; Leroy, C.; Sciortino, S.

1997-02-01

The thermoluminescent (TL) response of Chemical Vapour Deposited (CVD) diamond films to beta irradiation has been investigated. A numerical curve-fitting procedure, calibrated by means of a set of LiF TLD100 experimental spectra, has been developed to deconvolute the complex structured TL glow curves. The values of the activation energy and of the frequency factor related to each of the TL peaks involved have been determined. The TL response of the CVD diamond films to beta irradiation has been compared with the TL response of a set of LiF TLD100 and TLD700 dosimeters. The results have been discussed and compared in view of an assessment of the efficiency of CVD diamond films in future applications as in vivo dosimeters.

Diamond detectors for high energy physics experiments

NASA Astrophysics Data System (ADS)

Bäni, L.; Alexopoulos, A.; Artuso, M.; Bachmair, F.; Bartosik, M.; Beacham, J.; Beck, H.; Bellini, V.; Belyaev, V.; Bentele, B.; Berdermann, E.; Bergonzo, P.; Bes, A.; Brom, J.-M.; Bruzzi, M.; Cerv, M.; Chiodini, G.; Chren, D.; Cindro, V.; Claus, G.; Collot, J.; Cumalat, J.; Dabrowski, A.; D'Alessandro, R.; Dauvergne, D.; de Boer, W.; Dorfer, C.; Dünser, M.; Eremin, V.; Eusebi, R.; Forcolin, G.; Forneris, J.; Frais-Kölbl, H.; Gallin-Martel, L.; Gallin-Martel, M. L.; Gan, K. K.; Gastal, M.; Giroletti, C.; Goffe, M.; Goldstein, J.; Golubev, A.; Gorišek, A.; Grigoriev, E.; Grosse-Knetter, J.; Grummer, A.; Gui, B.; Guthoff, M.; Haughton, I.; Hiti, B.; Hits, D.; Hoeferkamp, M.; Hofmann, T.; Hosslet, J.; Hostachy, J.-Y.; Hügging, F.; Hutton, C.; Jansen, H.; Janssen, J.; Kagan, H.; Kanxheri, K.; Kasieczka, G.; Kass, R.; Kassel, F.; Kis, M.; Konovalov, V.; Kramberger, G.; Kuleshov, S.; Lacoste, A.; Lagomarsino, S.; Lo Giudice, A.; Lukosi, E.; Maazouzi, C.; Mandic, I.; Mathieu, C.; Menichelli, M.; Mikuž, M.; Morozzi, A.; Moss, J.; Mountain, R.; Murphy, S.; Muškinja, M.; Oh, A.; Oliviero, P.; Passeri, D.; Pernegger, H.; Perrino, R.; Picollo, F.; Pomorski, M.; Potenza, R.; Quadt, A.; Re, A.; Reichmann, M.; Riley, G.; Roe, S.; Sanz, D.; Scaringella, M.; Schaefer, D.; Schmidt, C. J.; Schnetzer, S.; Sciortino, S.; Scorzoni, A.; Seidel, S.; Servoli, L.; Smith, S.; Sopko, B.; Sopko, V.; Spagnolo, S.; Spanier, S.; Stenson, K.; Stone, R.; Sutera, C.; Tannenwald, B.; Taylor, A.; Traeger, M.; Tromson, D.; Trischuk, W.; Tuve, C.; Uplegger, L.; Velthuis, J.; Venturi, N.; Vittone, E.; Wagner, S.; Wallny, R.; Wang, J. C.; Weingarten, J.; Weiss, C.; Wengler, T.; Wermes, N.; Yamouni, M.; Zavrtanik, M.

2018-01-01

Beam test results of the radiation tolerance study of chemical vapour deposition (CVD) diamond against different particle species and energies is presented. We also present beam test results on the independence of signal size on incident particle rate in charged particle detectors based on un-irradiated and irradiated poly-crystalline CVD diamond over a range of particle fluxes from 2 kHz/cm2 to 10 MHz/cm2. The pulse height of the sensors was measured with readout electronics with a peaking time of 6 ns. In addition functionality of poly-crystalline CVD diamond 3D devices was demonstrated in beam tests and 3D diamond detectors are shown to be a promising technology for applications in future high luminosity experiments.

Correlation of CVD Diamond Electron Emission with Film Properties

NASA Astrophysics Data System (ADS)

Bozeman, S. P.; Baumann, P. K.; Ward, B. L.; Nemanich, R. J.; Dreifus, D. L.

1996-03-01

Electron field emission from metals is affected by surface morphology and the properties of any dielectric coating. Recent results have demonstrated low field electron emission from p-type diamond, and photoemission measurements have identified surface treatments that result in a negative electron affinity (NEA). In this study, the field emission from diamond is correlated with surface treatment, surface roughness, and film properties (doping and defects). Electron emission measurements are reported on diamond films synthesized by plasma CVD. Ultraviolet photoemission spectroscopy indicates that the CVD films exhibit a NEA after exposure to hydrogen plasma. Field emission current-voltage measurements indicate "threshold voltages" ranging from approximately 20 to 100 V/micron.

Proton irradiation of CVD diamond detectors for high-luminosity experiments at the LHC

NASA Astrophysics Data System (ADS)

Meier, D.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Foulon, F.; Friedl, M.; Jany, C.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Manfredi, P. F.; Marshall, R. D.; Mishina, M.; Le Normand, F.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-04-01

CVD diamond shows promising properties for use as a position-sensitive detector for experiments in the highest radiation areas at the Large Hadron Collider. In order to study the radiation hardness of diamond we exposed CVD diamond detector samples to 24 Gev/ c and 500 Mev protons up to a fluence of 5×10 15 p/cm 2. We measured the charge collection distance, the average distance electron-hole pairs move apart in an external electric field, and leakage currents before, during, and after irradiation. The charge collection distance remains unchanged up to 1×10 15 p/cm 2 and decreases by ≈40% at 5×10 15 p/cm 2. Leakage currents of diamond samples were below 1 pA before and after irradiation. The particle-induced currents during irradiation correlate well with the proton flux. In contrast to diamond, a silicon diode, which was irradiated for comparison, shows the known large increase in leakage current. We conclude that CVD diamond detectors are radiation hard to 24 GeV/ c and 500 MeV protons up to at least 1×10 15p/cm 2 without signal loss.

Ultratough CVD single crystal diamond and three dimensional growth thereof

DOEpatents

Hemley, Russell J [Washington, DC; Mao, Ho-kwang [Washington, DC; Yan, Chih-shiue [Washington, DC

2009-09-29

The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

Status of the R&D activity on diamond particle detectors

NASA Astrophysics Data System (ADS)

Adam, W.; Bellini, B.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Doroshenko, J.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K. K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Karl, C.; Kass, R.; Keil, M.; Knöpfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Perera, L.; Pernicka, M.; Polesello, P.; Potenza, R.; Riester, J. L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.; RD42 Collaboration

2003-09-01

Chemical Vapor Deposited (CVD) polycrystalline diamond has been proposed as a radiation-hard alternative to silicon in the extreme radiation levels occurring close to the interaction region of the Large Hadron Collider. Due to an intense research effort, reliable high-quality polycrystalline CVD diamond detectors, with up to 270 μm charge collection distance and good spatial uniformity, are now available. The most recent progress on the diamond quality, on the development of diamond trackers and on radiation hardness studies are presented and discussed.

High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

DOE PAGES

Vohra, Yogesh K.; Samudrala, Gopi K.; Moore, Samuel L.; ...

2015-06-10

Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two stage diamond anvil with 300 μm culet and with a CVD diamond second stage ofmore » 50 μm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86 GPa. Furthermore, the micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86 GPa.« less

Boron-doped nanocrystalline diamond microelectrode arrays monitor cardiac action potentials.

PubMed

Maybeck, Vanessa; Edgington, Robert; Bongrain, Alexandre; Welch, Joseph O; Scorsone, Emanuel; Bergonzo, Philippe; Jackman, Richard B; Offenhäusser, Andreas

2014-02-01

The expansion of diamond-based electronics in the area of biological interfacing has not been as thoroughly explored as applications in electrochemical sensing. However, the biocompatibility of diamond, large safe electrochemical window, stability, and tunable electronic properties provide opportunities to develop new devices for interfacing with electrogenic cells. Here, the fabrication of microelectrode arrays (MEAs) with boron-doped nanocrystalline diamond (BNCD) electrodes and their interfacing with cardiomyocyte-like HL-1 cells to detect cardiac action potentials are presented. A nonreductive means of structuring doped and undoped diamond on the same substrate is shown. The resulting BNCD electrodes show high stability under mechanical stress generated by the cells. It is shown that by fabricating the entire surface of the MEA with NCD, in patterns of conductive doped, and isolating undoped regions, signal detection may be improved up to four-fold over BNCD electrodes passivated with traditional isolators. Copyright © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deposition of boron doped DLC films on TiNb and characterization of their mechanical properties and blood compatibility

PubMed Central

Liza, Shahira; Hieda, Junko; Akasaka, Hiroki; Ohtake, Naoto; Tsutsumi, Yusuke; Nagai, Akiko; Hanawa, Takao

2017-01-01

Abstract Diamond-like carbon (DLC) material is used in blood contacting devices as the surface coating material because of the antithrombogenicity behavior which helps to inhibit platelet adhesion and activation. In this study, DLC films were doped with boron during pulsed plasma chemical vapor deposition (CVD) to improve the blood compatibility. The ratio of boron to carbon (B/C) was varied from 0 to 0.4 in the film by adjusting the flow rate of trimethylboron and acetylene. Tribological tests indicated that boron doping with a low B/C ratio of 0.03 is beneficial for reducing friction (μ = 0.1), lowering hardness and slightly increasing wear rate compared to undoped DLC films. The B/C ratio in the film of 0.03 and 0.4 exhibited highly hydrophilic surface owing to their high wettability and high surface energy. An in vitro platelet adhesion experiment was conducted to compare the blood compatibility of TiNb substrates before and after coating with undoped and boron doped DLC. Films with highly hydrophilic surface enhanced the blood compatibility of TiNb, and the best results were obtained for DLC with the B/C ratio of 0.03. Boron doped DLC films are promising surface coatings for blood contacting devices. PMID:28179961

Probing Growth-Induced Anisotropic Thermal Transport in High-Quality CVD Diamond Membranes by Multifrequency and Multiple-Spot-Size Time-Domain Thermoreflectance.

PubMed

Cheng, Zhe; Bougher, Thomas; Bai, Tingyu; Wang, Steven Y; Li, Chao; Yates, Luke; Foley, Brian M; Goorsky, Mark; Cola, Baratunde A; Faili, Firooz; Graham, Samuel

2018-02-07

The maximum output power of GaN-based high-electron mobility transistors is limited by high channel temperature induced by localized self-heating, which degrades device performance and reliability. Chemical vapor deposition (CVD) diamond is an attractive candidate to aid in the extraction of this heat and in minimizing the peak operating temperatures of high-power electronics. Owing to its inhomogeneous structure, the thermal conductivity of CVD diamond varies along the growth direction and can differ between the in-plane and out-of-plane directions, resulting in a complex three-dimensional (3D) distribution. Depending on the thickness of the diamond and size of the electronic device, this 3D distribution may impact the effectiveness of CVD diamond in device thermal management. In this work, time-domain thermoreflectance is used to measure the anisotropic thermal conductivity of an 11.8 μm-thick high-quality CVD diamond membrane from its nucleation side. Starting with a spot-size diameter larger than the thickness of the membrane, measurements are made at various modulation frequencies from 1.2 to 11.6 MHz to tune the heat penetration depth and sample the variation in thermal conductivity. We then analyze the data by creating a model with the membrane divided into ten sublayers and assume isotropic thermal conductivity in each sublayer. From this, we observe a two-dimensional gradient of the depth-dependent thermal conductivity for this membrane. The local thermal conductivity goes beyond 1000 W/(m K) when the distance from the nucleation interface only reaches 3 μm. Additionally, by measuring the same region with a smaller spot size at multiple frequencies, the in-plane and cross-plane thermal conductivities are extracted. Through this use of multiple spot sizes and modulation frequencies, the 3D anisotropic thermal conductivity of CVD diamond membrane is experimentally obtained by fitting the experimental data to a thermal model. This work provides an improved understanding of thermal conductivity inhomogeneity in high-quality CVD polycrystalline diamond that is important for applications in the thermal management of high-power electronics.

CVD diamond substrate for microelectronics. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burden, J.; Gat, R.

1996-11-01

Chemical Vapor Deposition (CVD) of diamond films has evolved dramatically in recent years, and commercial opportunities for diamond substrates in thermal management applications are promising. The objective of this technology transfer initiative (TTI) is for Applied Science and Technology, Inc. (ASTEX) and AlliedSignal Federal Manufacturing and Technologies (FM&T) to jointly develop and document the manufacturing processes and procedures required for the fabrication of multichip module circuits using CVD diamond substrates, with the major emphasis of the project concentrating on lapping/polishing prior to metallization. ASTEX would provide diamond films for the study, and FM&T would use its experience in lapping, polishing,more » and substrate metallization to perform secondary processing on the parts. The primary goal of the project was to establish manufacturing processes that lower the manufacturing cost sufficiently to enable broad commercialization of the technology.« less

A beam radiation monitor based on CVD diamonds for SuperB

NASA Astrophysics Data System (ADS)

Cardarelli, R.; Di Ciaccio, A.

2013-08-01

Chemical Vapor Deposition (CVD) diamond particle detectors are in use in the CERN experiments at LHC and at particle accelerator laboratories in Europe, USA and Japan mainly as beam monitors. Nowadays it is considered a proven technology with a very fast signal read-out and a very high radiation tolerance suitable for measurements in high radiation environment zones i.e. near the accelerators beam pipes. The specific properties of CVD diamonds make them a prime candidate for measuring single particles as well as high-intensity particle cascades, for timing measurements on the sub-nanosecond scale and for beam protection systems in hostile environments. A single-crystalline CVD (scCVD) diamond sensor, read out with a new generation of fast and high transition frequency SiGe bipolar transistor amplifiers, has been tested for an application as radiation monitor to safeguard the silicon vertex tracker in the SuperB detector from excessive radiation damage, cumulative dose and instantaneous dose rates. Test results with 5.5 MeV alpha particles from a 241Am radioactive source and from electrons from a 90Sr radioactive source are presented in this paper.

Bragg superlattice for obtaining individual photoluminescence of diamond color centers in dense 3D ensembles

NASA Astrophysics Data System (ADS)

Kukushkin, V. A.

2017-10-01

A way to significantly increase the spatial resolution of the color center photoluminescence collection in chemically vapor-deposited (CVD) diamond at a fixed exciting beam focal volume is suggested. It is based on the creation of a narrow waveguide for the color center photoluminescence with a small number of allowed vertical indices of guided modes. The waveguide is formed between the top surface of a CVD diamond film and an underlaid mirror—a Bragg superlattice made of interchanging high- and low boron-doped layers of CVD diamond. The guided color center photoluminescence is extracted through the top surface of a CVD diamond film with the frustrated total internal reflection method. According to the results of simulation made for a case when color centers are nitrogen-vacancy (NV) centers, the suggested way allows to increase the maximal value of the NV center concentration still compatible with selective collection of their photoluminescence by several times at a fixed exciting beam focal volume. This increase is provided without the deterioration of the NV center photoluminescence collection efficiency.

Observation of twinning in diamond CVD films

NASA Astrophysics Data System (ADS)

Marciniak, W.; Fabisiak, K.; Orzeszko, S.; Rozploch, F.

1992-10-01

Diamond particles prepared by dc-glow-discharge enhanced HF-CVD hybrid method, from a mixture of acetone vapor and hydrogen gas have been examined by TEM, RHEED and dark field method of observation. Results suggest the presence of twinned diamond particles, which can be reconstructed by a sequence of twinning operations. Contrary to the 'stick model' of the lattice, very common five-fold symmetry of diamond microcrystals may be obtained by applying a number of edge dislocations rather than the continuous deformation of many tetrahedral C-C bonds.

Industrial diamond

USGS Publications Warehouse

Olson, D.W.

2013-01-01

Estimated 2012 world production of natural and synthetic industrial diamond was about 4.45 billion carats. During 2012, natural industrial diamonds were produced in at least 20 countries, and synthetic industrial diamond was produced in at least 12 countries. About 99 percent of the combined natural and synthetic global output was produced in Belarus, China, Ireland, Japan, Russia, South Africa and the United States. During 2012, China was the world’s leading producer of synthetic industrial diamond followed by the United States and Russia. In 2012, the two U.S. synthetic producers, one in Pennsylvania and the other in Ohio, had an estimated output of 103 million carats, valued at about $70.6 million. This was an estimated 43.7 million carats of synthetic diamond bort, grit, and dust and powder with a value of $14.5 million combined with an estimated 59.7 million carats of synthetic diamond stone with a value of $56.1 million. Also in 2012, nine U.S. firms manufactured polycrystalline diamond (PCD) from synthetic diamond grit and powder. The United States government does not collect or maintain data for either domestic PCD producers or domestic chemical vapor deposition (CVD) diamond producers for quantity or value of annual production. Current trade and consumption quantity data are not available for PCD or for CVD diamond. For these reasons, PCD and CVD diamond are not included in the industrial diamond quantitative data reported here.

Measurements and Diagnostics of Diamond Films and Coatings

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Wu, Richard L. C.

1999-01-01

The commercial potential of chemical-vapor-deposited (CVD) diamond films has been established and a number of applications have been identified through university, industry, and government research studies. This paper discusses the methodologies used for property measurement and diagnostic of CVD diamond films and coatings. Measurement and diagnostic techniques studied include scanning electron microscopy, transmission electron microscopy, atomic force microscopy, stylus profilometry, x-ray diffraction, electron diffraction, Raman spectroscopy, Rutherford backscattering, elastic recoil spectroscopy, and friction examination. Each measurement and diagnostic technique provides unique information. A combination of techniques can provide the technical information required to understand the quality and properties of CVD diamond films, which are important to their application in specific component systems and environments. In this study the combination of measurement and diagnostic techniques was successfully applied to correlate deposition parameters and resultant diamond film composition, crystallinity, grain size, surface roughness, and coefficient of friction.

Nitrogen and silicon defect incorporation during homoepitaxial CVD diamond growth on (111) surfaces

DOE PAGES

Moore, Samuel L.; Vohra, Yogesh K.

2015-01-01

Chemical Vapor Deposited (CVD) diamond growth on (111)-diamond surfaces has received increased attention lately because of the use of N-V related centers in quantum computing as well as application of these defect centers in sensing nano-Tesla strength magnetic fields. We have carried out a detailed study of homoepitaxial diamond deposition on (111)-single crystal diamond (SCD) surfaces using a 1.2 kW microwave plasma CVD (MPCVD) system employing methane/hydrogen/nitrogen/oxygen gas phase chemistry. We have utilized Type Ib (111)-oriented single crystal diamonds as seed crystals in our study. The homoepitaxially grown diamond films were analyzed by Raman spectroscopy, Photoluminescence Spectroscopy (PL), X-ray Photoelectronmore » Spectroscopy (XPS), Scanning Electron Microscopy (SEM) and Atomic Force Microscopy (AFM). The nitrogen concentration in the plasma was carefully varied between 0 and 1500 ppm while a ppm level of silicon impurity is present in the plasma from the quartz bell jar. The concentration of N-V defect centers with PL zero phonon lines (ZPL) at 575nm and 637nm and the Si-defect center with a ZPL at 737nm were experimentally detected from a variation in CVD growth conditions and were quantitatively studied. As a result, altering nitrogen and oxygen concentration in the plasma was observed to directly affect N-V and Si-defect incorporation into the (111)-oriented diamond lattice and these findings are presented.« less

Structural analysis of ion-implanted chemical-vapor-deposited diamond by transmission electron microscope

NASA Astrophysics Data System (ADS)

Jiang, N.; Deguchi, M.; Wang, C. L.; Won, J. H.; Jeon, H. M.; Mori, Y.; Hatta, A.; Kitabatake, M.; Ito, T.; Hirao, T.; Sasaki, T.; Hiraki, A.

1997-04-01

A transmission electron microscope (TEM) study of ion-implanted chemical-vapor-deposited (CVD) diamond is presented. CVD diamond used for transmission electron microscope observation was directly deposited onto Mo TEM grids. As-deposited specimens were irradiated by C (100 keV) ions at room temperature with a wide range of implantation doses (10 12-10 17/cm 2). Transmission electron diffraction (TED) patterns indicate that there exists a critical dose ( Dc) for the onset of amorphization of CVD diamond as a result of ion induced damage and the value of critical dose is confirmed to be about 3 × 10 15/cm 2. The ion-induced transformation process is clearly revealed by high resolution electron microscope (HREM) images. For a higher dose implantation (7 × 10 15/cm 2) a large amount of diamond phase is transformed into amorphous carbon and many tiny misoriented diamond blocks are found to be left in the amorphous solid. The average size of these misoriented diamond blocks is only about 1-2 nm. Further bombardment (10 17/cm 2) almost kills all of the diamond phase within the irradiated volume and moreover leads to local formation of micropolycrystalline graphite.

Recent Results with CVD Diamond Trackers

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; White, C.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-08-01

We present recent results on the use of Chemical Vapor Deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1 x 1 cm 2 diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 μs shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2 x 4 cm 2 diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch.

Performance of irradiated CVD diamond micro-strip sensors

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.; Plano, R.; Somalwar, S. V.; Thomson, G. B.

2002-01-01

CVD diamond detectors are of interest for charged particle detection and tracking due to their high radiation tolerance. In this article, we present, for the first time, beam test results from recently manufactured CVD diamond strip detectors and their behavior under low doses of electrons from a β-source and the performance before and after intense (>10 15/cm 2) proton- and pion-irradiations. We find that low dose irradiation increase the signal-to-noise ratio (pumping of the signal) and slightly deteriorate the spatial resolution. Intense irradiation with protons 2.2×10 15 p/ cm2 lowers the signal-to-noise ratio slightly. Intense irradiation with pions 2.9×10 15 π/ cm2 lowers the signal-to-noise ratio more. The spatial resolution of the diamond sensors improves after irradiations.

Electrical current at micro-/macro-scale of undoped and nitrogen-doped MWPECVD diamond films

NASA Astrophysics Data System (ADS)

Cicala, G.; Velardi, L.; Senesi, G. S.; Picca, R. A.; Cioffi, N.

2017-12-01

Chemical, structural, morphological and micro-/macro-electrical properties of undoped and nitrogen-(N-)doped diamond films are determined by X-ray photoelectron spectroscopy, Raman and photoluminescence spectroscopies, field emission scanning electron microscopy, atomic force microscopy, scanning capacitance microscopy (SCM) and two points technique for I-V characteristics, respectively. The characterization results are very useful to examine and understand the relationship among these properties. The effect of the nitrogen incorporation in diamond films is investigated through the evolution of the chemical, structural, morphological and topographical features and of the electrical behavior. The distribution of the electrical current is first assessed at millimeter scale on the surface of diamond films and then at micrometer scale on small regions in order to establish the sites where the carriers preferentially move. Specifically, the SCM images indicate a non-uniform distribution of carriers on the morphological structures mainly located along the grain boundaries. A good agreement is found by comparing the electrical currents at the micro- and macro-scale. This work aims to highlight phenomena such as photo- and thermionic emission from N-doped diamond useful for microelectronic engineering.

Toward deep blue nano hope diamonds: heavily boron-doped diamond nanoparticles.

PubMed

Heyer, Steffen; Janssen, Wiebke; Turner, Stuart; Lu, Ying-Gang; Yeap, Weng Siang; Verbeeck, Jo; Haenen, Ken; Krueger, Anke

2014-06-24

The production of boron-doped diamond nanoparticles enables the application of this material for a broad range of fields, such as electrochemistry, thermal management, and fundamental superconductivity research. Here we present the production of highly boron-doped diamond nanoparticles using boron-doped CVD diamond films as a starting material. In a multistep milling process followed by purification and surface oxidation we obtained diamond nanoparticles of 10-60 nm with a boron content of approximately 2.3 × 10(21) cm(-3). Aberration-corrected HRTEM reveals the presence of defects within individual diamond grains, as well as a very thin nondiamond carbon layer at the particle surface. The boron K-edge electron energy-loss near-edge fine structure demonstrates that the B atoms are tetrahedrally embedded into the diamond lattice. The boron-doped diamond nanoparticles have been used to nucleate growth of a boron-doped diamond film by CVD that does not contain an insulating seeding layer.

Profiling of Current Transients in Capacitor Type Diamond Sensors.

PubMed

Gaubas, Eugenijus; Ceponis, Tomas; Meskauskaite, Dovile; Kazuchits, Nikolai

2015-06-08

The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo's theorem, under injection of localized surface domains and of bulk charge carriers. The bipolar drift-diffusion regimes have been analyzed for the photo-induced bulk domain (packet) of excess carriers. The surface charge formation and polarization effects dependent on detector biasing voltage have been revealed. The screening effects ascribed to surface charge and to dynamics of extraction of the injected bulk excess carrier domain have been separated and explained. The parameters of drift mobility of the electrons μ(e) = 4000 cm2/Vs and holes μ(h) = 3800 cm2/Vs have been evaluated for CVD diamond using the perpendicular profiling of currents. The coefficient of carrier ambipolar diffusion D(a) = 97 cm2/s and the carrier recombination lifetime τ(R,CVD) ≌ 110 ns in CVD diamond were extracted by combining analysis of the transients of the sensor current and the microwave probed photoconductivity. The carrier trapping with inherent lifetime τR,HPHT ≌ 2 ns prevails in HPHT diamond.

Radiation tolerance of CVD diamond detectors for pions and protons

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; mac Lynne, L.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Perera, L.; Pirollo, S.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Wetstein, M.; White, C.; Zeuner, W.; Zoeller, M.

2002-01-01

The paper gives new results on the radiation tolerance of CVD diamond for irradiation with 300 MeV/ c pions and 24 GeV/ c protons. The measured charge signal spectrum is compared at several irradiation levels with the spectrum calculated by a model. Irradiation by particles causes damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model show that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

Liquid impact and fracture of free-standing CVD diamond

NASA Astrophysics Data System (ADS)

Kennedy, Claire F.; Telling, Robert H.; Field, John E.

1999-07-01

The Cavendish Laboratory has developed extensive facilities for studies of liquid and solid particle erosion. This paper describes the high-speed liquid impact erosion of thin CVD diamond discs and the variation with grain sizes of the absolute damage threshold velocity (ADTV), viz., the threshold below which the specimen shows no damage. All specimens fail by rear surface cracking and there is shown to be a shallow dependence of rear surface ADTV on grain size. Fracture propagation in CVD diamond has also been monitored using a specially-designed double-torsion apparatus and data for K1C are presented. Tentatively, the results suggest that finer-grained CVD diamond exhibits a higher fracture toughness, although the differences are slight even over a fourfold variation in the mean grain size. No preference for intergranular fracture was observed and one may conclude from this that the grain boundaries themselves do not seriously weaken the material. The large pre-existing flaws, both within and between grains, whose size varies the grain size are believed to be the dominant source of weakness.

Proceedings of the International Symposium on Diamond Materials Held in Washington, DC on 5-10 May 1991. Volume 91-8

DTIC Science & Technology

1991-05-01

J. S. Ma, H. Kawarada, T. Yonehara, & A. Hiraki DIAMOND ON SILICON: A HOT FILAMENT CVD STUDY OF 266 NUCLEATION P. Ascarelli, S. Fontana, E. Molinari...BORON-DOPED CVD DIAMONDS H. Ka warada, Y. Yokota, H. Matsuyama T. Sogi, & A. Hiraki SPATIALLY AND SPECTALLY RESOLVED 427 CATHODOLUMINESCENCE...Sheng Ma, *Hiroshi Kawarada, "Takao Yonehara, and Akio Hiraki Department of Electrical Engineering, Osaka University, Suita-shi, Osaka 565, Japan

Profiling of Current Transients in Capacitor Type Diamond Sensors

PubMed Central

Gaubas, Eugenijus; Ceponis, Tomas; Meskauskaite, Dovile; Kazuchits, Nikolai

2015-01-01

The operational characteristics of capacitor-type detectors based on HPHT and CVD diamond have been investigated using perpendicular and parallel injection of carrier domain regimes. Simulations of the drift-diffusion current transients have been implemented by using dynamic models based on Shockley-Ramo’s theorem, under injection of localized surface domains and of bulk charge carriers. The bipolar drift-diffusion regimes have been analyzed for the photo-induced bulk domain (packet) of excess carriers. The surface charge formation and polarization effects dependent on detector biasing voltage have been revealed. The screening effects ascribed to surface charge and to dynamics of extraction of the injected bulk excess carrier domain have been separated and explained. The parameters of drift mobility of the electrons μe = 4000 cm2/Vs and holes μh = 3800 cm2/Vs have been evaluated for CVD diamond using the perpendicular profiling of currents. The coefficient of carrier ambipolar diffusion Da = 97 cm2/s and the carrier recombination lifetime τR,CVD ≌ 110 ns in CVD diamond were extracted by combining analysis of the transients of the sensor current and the microwave probed photoconductivity. The carrier trapping with inherent lifetime τR,HPHT ≌ 2 ns prevails in HPHT diamond. PMID:26061200

An evaluation of some pertinent parameters that influence the dosimetric performance of synthetic diamond detectors

NASA Astrophysics Data System (ADS)

Ade, N.; Nam, T. L.; Mhlanga, S. H.

2013-05-01

Although the near-tissue equivalence of diamond allows the direct measurement of dose for clinical applications without the need for energy-corrections, it is often cited that diamond detectors require pre-irradiation, a procedure necessary to stabilize the response or sensitivity of a diamond detector before dose measurements. In addition it has been pointed out that the relative dose measured with a diamond detector requires dose rate dependence correction and that the angular dependence of a detector could be due to its mechanical design or to the intrinsic angular sensitivity of the detection process. While the cause of instability of response has not been meticulously investigated, the issue of dose rate dependence correction is uncertain as some studies ignored it but reported good results. The aims of this study were therefore to investigate, in particular (1) the major cause of the unstable response of diamond detectors requiring pre-irradiation; (2) the influence of dose rate dependence correction in relative dose measurements; and (3) the angular dependence of the diamond detectors. The study was conducted with low-energy X-rays and electron therapy beams on HPHT and CVD synthesized diamonds. Ionization chambers were used for comparative measurements. Through systematic investigations, the major cause of the unstable response of diamond detectors requiring the recommended pre-irradiation step was isolated and attributed to the presence and effects of ambient light. The variation in detector's response between measurements in light and dark conditions could be as high as 63% for a CVD diamond. Dose rate dependence parameters (Δ values) of 0.950 and 1.035 were found for the HPHT and CVD diamond detectors, respectively. Without corrections based on dose rate dependence, the relative differences between depth-doses measured with the diamond detectors and a Markus chamber for exposures to 7 and 14 MeV electron beams were within 2.5%. A dose rate dependence correction using the Δ values obtained seemed to worsen the performance of the HPHT sample (up to about 3.3%) but it had a marginal effect on the performance of the CVD sample. In addition, the angular response of the CVD diamond detector was shown to be comparable with that of a cylindrical chamber. This study concludes that once the responses of the diamond detectors have been stabilised and they are properly shielded from ambient light, pre-irradiation prior to each measurement is not required. Also, the relative dose measured with the diamond detectors do not require dose rate dependence corrections as the required correction is only marginal and could have no dosimetric significance.

A novel Mo-W interlayer approach for CVD diamond deposition on steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kundrát, Vojtěch; Sullivan, John; Ye, Haitao, E-mail: h.ye@aston.ac.uk

Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference inmore » the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.« less

A novel Mo-W interlayer approach for CVD diamond deposition on steel

NASA Astrophysics Data System (ADS)

Kundrát, Vojtěch; Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin; Sullivan, John; Ye, Haitao

2015-04-01

Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) - tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1996-01-01

We present a summary of the research, citations of publications resulting from the research and abstracts of such publications. We have made no inventions in the performance of the work in this project. The main goals of the project were to set up a Chemical Vapor Deposition (CVD) diamond growth system attached to an UltraHigh Vacuum (UHV) atomic resolution Scanning Tunneling Microscopy (STM) system and carry out experiments aimed at studying the properties and growth of diamond films using atomic resolution UHV STM. We successfully achieved these goals. We observed, for the first time, the atomic structure of the surface of CVD grown epitaxial diamond (100) films using UHV STM. We studied the effects of atomic hydrogen on the CVD diamond growth process. We studied the electronic properties of the diamond (100) (2x1) surface, and the effect of alkali metal adsorbates such as Cs on the work function of this surface using UHV STM spectroscopy techniques. We also studied, using STM, new electronic materials such as carbon nanotubes and gold nanostructures. This work resulted in four publications in refereed scientific journals and five publications in refereed conference proceedings.

Radiation damage in the diamond based beam condition monitors of the CMS experiment at the Large Hadron Collider (LHC) at CERN

NASA Astrophysics Data System (ADS)

Guthoff, Moritz; Afanaciev, Konstantin; Dabrowski, Anne; de Boer, Wim; Lange, Wolfgang; Lohmann, Wolfgang; Stickland, David

2013-12-01

The Beam Condition Monitor (BCM) of the CMS detector at the LHC is a protection device similar to the LHC Beam Loss Monitor system. While the electronics used is the same, poly-crystalline Chemical Vapor Deposition (pCVD) diamonds are used instead of ionization chambers as the BCM sensor material. The main purpose of the system is the protection of the silicon Pixel and Strip tracking detectors by inducing a beam dump, if the beam losses are too high in the CMS detector. By comparing the detector current with the instantaneous luminosity, the BCM detector efficiency can be monitored. The number of radiation-induced defects in the diamond, reduces the charge collection distance, and hence lowers the signal. The number of these induced defects can be simulated using the FLUKA Monte Carlo simulation. The cross-section for creating defects increases with decreasing energies of the impinging particles. This explains, why diamond sensors mounted close to heavy calorimeters experience more radiation damage, because of the high number of low energy neutrons in these regions. The signal decrease was stronger than expected from the number of simulated defects. Here polarization from trapped charge carriers in the defects is a likely candidate for explaining the difference, as suggested by Transient Current Technique (TCT) measurements. A single-crystalline (sCVD) diamond sensor shows a faster relative signal decrease than a pCVD sensor mounted at the same location. This is expected, since the relative increase in the number of defects is larger in sCVD than in pCVD sensors.

Plasma boriding of a cobalt-chromium alloy as an interlayer for nanostructured diamond growth

NASA Astrophysics Data System (ADS)

Johnston, Jamin M.; Jubinsky, Matthew; Catledge, Shane A.

2015-02-01

Chemical vapor deposited (CVD) diamond coatings can potentially improve the wear resistance of cobalt-chromium medical implant surfaces, but the high cobalt content in these alloys acts as a catalyst to form graphitic carbon. Boriding by high temperature liquid baths and powder packing has been shown to improve CVD diamond compatibility with cobalt alloys. We use the microwave plasma-enhanced (PE) CVD process to deposit interlayers composed primarily of the borides of cobalt and chromium. The use of diborane (B2H6) in the plasma feedgas allows for the formation of a robust boride interlayer for suppressing graphitic carbon during subsequent CVD of nano-structured diamond (NSD). This metal-boride interlayer is shown to be an effective diffusion barrier against elemental cobalt for improving nucleation and adhesion of NSD coatings on a CoCrMo alloy. Migration of elemental cobalt to the surface of the interlayer is significantly reduced and undetectable on the surface of the subsequently-grown NSD coating. The effects of PECVD boriding are compared for a range of substrate temperatures and deposition times and are evaluated using glancing-angle X-ray diffraction (XRD), cross-sectional scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDS), and micro-Raman spectroscopy. Boriding of CoCrMo results in adhered nanostructured diamond coatings with low surface roughness.

Raman studied of undoped amorphous carbon thin film deposited by bias assisted-CVD

NASA Astrophysics Data System (ADS)

Ishak, A.; Fadzilah, A. N.; Dayana, K.; Saurdi, I.; Malek, M. F.; Nurbaya, Z.; Shafura, A. K.; Rusop, M.

2018-05-01

The undoped amorphous carbon thin film carbon was deposited at 200°C-350°C by bias assisted-CVD using palm oil as a precursor material. The effect of different substrate deposition temperatures on structural and electrical properties of undoped doped amorphous carbon film was discussed. The structural of undoped amorphous carbon films were correlated with Raman analysis through the evolution of D and G bands, Fourier spectra, and conductivity measurement. The spectral evolution observed showed the increase of upward shift of D and G peaks as substrate deposition temperatures increased. The spectral evolution observed at different substrate deposition temperatures show progressive formation of crystallites. It was predicted that small number of hydrogen is terminated with carbon at surface of thin film as shown by FTIR spectra since palm oil has high number of hydrogen (C67H127O8). These structural changes were further correlated with conductivity and the results obtained are discussed and compared. The conductivity is found in the range of 10-8 Scm-1. The increase of conductivity is correlated by the change of structural properties as correlated with characteristic parameters of Raman spectra including the position of G peak, full width at half maximum of G peak, and ID/IG and FTIR result.

Nano- and microcrystalline diamond deposition on pretreated WC-Co substrates: structural properties and adhesion

NASA Astrophysics Data System (ADS)

Fraga, M. A.; Contin, A.; Rodríguez, L. A. A.; Vieira, J.; Campos, R. A.; Corat, E. J.; Trava Airoldi, V. J.

2016-02-01

Many developments have been made to improve the quality and adherence of CVD diamond films onto WC-Co hard metal tools by the removing the cobalt from the substrate surface through substrate pretreatments. Here we compare the efficiency of three chemical pretreatments of WC-Co substrates for this purpose. First, the work was focused on a detailed study of the composition and structure of as-polished and pretreated substrate surfaces to characterize the effects of the substrate preparation. Considering this objective, a set of WC-9% Co substrates, before and after pretreatment, was analyzed by FEG-SEM, EDS and x-ray diffraction (XRD). The second stage of the work was devoted to the evaluation of the influence of seeding process, using 4 nm diamond nanoparticles, on the morphology and roughness of the pretreated substrates. The last and most important stage was to deposit diamond coatings with different crystallite sizes (nano and micro) by hot-filament CVD to understand fully the mechanism of growth and adhesion of CVD diamond films on pretreated WC-Co substrates. The transition from nano to microcrystalline diamond was achieved by controlling the CH4/H2 gas ratio. The nano and microcrystalline samples were grown under same time at different substrate temperatures 600 °C and 800 °C, respectively. The different substrate temperatures allowed the analysis of the cobalt diffusion from the bulk to the substrate surface during CVD film growth. Furthermore, it was possible to evaluate how the coating adhesion is affected by the diffusion. The diamond coatings were characterized by Raman spectroscopy, XRD, EDS, FEG-SEM, atomic force microscope and 1500 N Rockwell indentation to evaluate the adhesion.

Scanning tunneling microscopy studies of diamond films and optoelectronic materials

NASA Technical Reports Server (NTRS)

Perez, Jose M.

1993-01-01

In this report, we report on progress achieved from 12/1/92 to 10/1/93 under the grant entitled 'Scanning Tunneling Microscopy Studies of Diamond Films and Optoelectronic Materials'. We have set-up a chemical vapor deposition (CVD) diamond film growth system and a Raman spectroscopy system to study the nucleation and growth of diamond films with atomic resolution using scanning tunneling microscopy (STM). A unique feature of the diamond film growth system is that diamond films can be transferred directly to the ultrahigh vacuum (UHV) chamber of a scanning tunneling microscope without contaminating the films by exposure to air. The University of North Texas (UNT) provided $20,000 this year as matching funds for the NASA grant to purchase the diamond growth system. In addition, UNT provided a Coherent Innova 90S Argon ion laser, a Spex 1404 double spectrometer, and a Newport optical table costing $90,000 to set-up the Raman spectroscopy system. The CVD diamond growth system and Raman spectroscopy system will be used to grow and characterize diamond films with atomic resolution using STM as described in our proposal. One full-time graduate student and one full-time undergraduate student are supported under this grant. In addition, several graduate and undergraduate students were supported during the summer to assist in setting-up the diamond growth and Raman spectroscopy systems. We have obtained research results concerning STM of the structural and electronic properties of CVD grown diamond films, and STM and scanning tunneling spectroscopy of carbon nanotubes. In collaboration with the transmission electron microscopy (TEM) group at UNT, we have also obtained results concerning the optoelectronic material siloxene. These results were published in refereed scientific journals, submitted for publication, and presented as invited and contributed talks at scientific conferences.

Charge multiplication effect in thin diamond films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Skukan, N., E-mail: nskukan@irb.hr; Grilj, V.; Sudić, I.

2016-07-25

Herein, we report on the enhanced sensitivity for the detection of charged particles in single crystal chemical vapour deposition (scCVD) diamond radiation detectors. The experimental results demonstrate charge multiplication in thin planar diamond membrane detectors, upon impact of 18 MeV O ions, under high electric field conditions. Avalanche multiplication is widely exploited in devices such as avalanche photo diodes, but has never before been reproducibly observed in intrinsic CVD diamond. Because enhanced sensitivity for charged particle detection is obtained for short charge drift lengths without dark counts, this effect could be further exploited in the development of sensors based on avalanchemore » multiplication and radiation detectors with extreme radiation hardness.« less

X-ray diffraction characterization of epitaxial CVD diamond films with natural and isotopically modified compositions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru; Voloshin, A. E.; Ralchenko, V. G.

2016-11-15

Comparative investigations of homoepitaxial diamond films with natural and modified isotopic compositions, grown by chemical vapor deposition (CVD) on type-Ib diamond substrates, are carried out using double-crystal X-ray diffractometry and topography. The lattice mismatch between the substrate and film is precisely measured. A decrease in the lattice constant on the order of (Δa/a){sub relax} ∼ (1.1–1.2) × 10{sup –4} is recorded in isotopically modified {sup 13}C (99.96%) films. The critical thicknesses of pseudomorphic diamond films is calculated. A significant increase in the dislocation density due to the elastic stress relaxation is revealed by X-ray topography.

Extended and Point Defects in Diamond Studied with the Aid of Various Forms of Microscopy.

PubMed

Steeds; Charles; Gilmore; Butler

2000-07-01

It is shown that star disclinations can be a significant source of stress in chemical vapor deposited (CVD) diamond. This purely geometrical origin contrasts with other sources of stress that have been proposed previously. The effectiveness is demonstrated of the use of electron irradiation using a transmission electron microscope (TEM) to displace atoms from their equilibrium sites to investigate intrinsic defects and impurities in CVD diamond. After irradiation, the samples are studied by low temperature photoluminescence microscopy using UV or blue laser illumination. Results are given that are interpreted as arising from isolated <100> split self-interstitials and positively charged single vacancies. Negatively charged single vacancies can also be revealed by this technique. Nitrogen and boron impurities may also be studied similarly. In addition, a newly developed liquid gallium source scanned ion beam mass spectrometry (SIMS) instrument has been used to map out the B distribution in B doped CVD diamond specimens. The results are supported by micro-Raman spectroscopy.

Time dependent 14 MeV neutrons measurement using a polycrystalline chemical vapor deposited diamond detector at the JET tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Angelone, M.; Pillon, M.; Bertalot, L.

A polycrystalline chemical vapor deposited (CVD) diamond detector was installed on a JET tokamak in order to monitor the time dependent 14 MeV neutron emission produced by D-T plasma pulses during the Trace Tritium Experiment (TTE) performed in October 2003. This was the first tentative ever attempted to use a CVD diamond detector as neutron monitor in a tokamak environment. Despite its small active volume, the detector was able to detect the 14 MeV neutron emission (>1.0x10{sup 15} n/shot) with good reliability and stability during the experimental campaign that lasted five weeks. The comparison with standard silicon detectors presently usedmore » at JET as 14 MeV neutron monitors is reported, showing excellent correlation between the measurements. The results prove that CVD diamond detectors can be reliably used in a tokamak environment and therefore confirm the potential of this technology for next step machines like ITER.« less

Tribological properties of CVD diamond coated ceramic surfaces

NASA Astrophysics Data System (ADS)

Abreu, Cristiano Simoes de

Recent developments in chemical vapour deposited (CVD) diamond coatings have attracted considerable interest and a host of new applications, each more challenging than the others. This increased attention results from the fact that CVD diamond lms retain to a large extent the outstanding physical and chemical properties of natural single crystal diamond such as extreme hardness, chemical inertness and high corrosion resistance, optical transparency and high thermal conductivity. Diamond features also surprisingly low friction and high wear resistance in unlubricated sliding contacts. Moreover, as opposed to natural diamond where the friction and wear behaviour is highly dependent on crystal orientation, polycrystalline CVD diamond lms supersede the monocrystalline variety due to isotropic tribological properties and possibility of coating complex shapes. Several materials have been tested and more or less successfully used as substrates for CVD diamond coatings. Nonetheless, satisfactory adherence of diamond coatings lms is often only attainable by the use of interlayers, in order to compensate for the large interfacial thermal expansion mismatch between the coating and substrate, which represent an additional processing step and added costs. A promising route will consist in using substrate materials with a low thermal expansion mismatch relative to that of diamond and, therefore, enhanced 1m adhesion. Among these, the ceramic silicon nitride (Si3N4) arises as a serious candidate. As a general rule, available literature regarding the tribological performance of CVD diamond coated Si3N4 lms is scarce, and the few available tribological data only deals with low applied loads. That being said, the correct tribological assessment of CVD diamond coated Si3N4 lms under more realistic sliding conditions, reproducing the stresses found in applications fields such as the fluid handling and metalworking industry, as well as in emerging biotribological areas, is on the agenda. In the present work, homologous tribological tests involving two distinct crystalline scale diamond coatings, namely microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) coatings, were performed under unlubricated and water lubricated sliding conditions. The friction and wear behaviour of each diamond system was assessed using a reciprocating motion type geometry under moderated to high applied normal loads, reaching maximum values as high as 160 N in the case of lubricated MCD lms. Influence of grain size effects and surface pre-treatments of the substrate on the tribological performance of MCD and NCD coatings, respectively, has also been undertaken. Several complementary characterisation techniques, including scanning electron microscopy, atomic force microscopy and micro-Raman studies, were used in order to assess the diamond quality, stress state, topography evolution of worn surfaces, wear resistance and prevailing wear mechanisms. The distinct friction regimes occurring for diamond-on-diamond dry sliding tests and condition for the delamination of the coating were also studied by the means of acoustic emission measurements. The friction performance of the MCD coatings under dry sliding were characterised by very low steady-state friction coeficient values in the range 0:03 - 0:04, regardless of the applied load. Such exceptional atrituous behaviour under unlubricated conditions was accompanied by a high resistance to wear damage, with wear rates characteristic of mild to very mild wear regimes (10. -8-10. -7mm3N-1m-1). The MCD water lubricated systems revealed even lower friction resistance (0.01 - 0.03), as well as a two-fold increase on the threshold load (150 N) prior to lm delamination under tribological stress. The inherent lower surface roughness of the NCD lms was responsible for a marginally lower steady-state friction response (0.02 - 0.03) in relation to the MCD coatings, and showed to be independent of the nishing condition and substrate surface pre-treatments. Moreover, the moderate initial friction response occurring during the running-in period of accommodation between opposing MCD surfaces was greatly suppressed by the much lower starting surface roughness found in the NCD coatings. Similarly to what was observed in water lubricated MCD coatings, homologous pairs of NCD lms sliding in distilled water displayed an improved tribological performance characterised by a high resistance to wear damage (10. -8 mm. 3N-1m-1) and higher threshold loads under tribologicalaction, making them promising candidates for highly demanding tribological applications, namely in biotribology where their clinical use e.g. in total arthroplasty is a possibility.

Diamond Nucleation Using Polyethene

NASA Technical Reports Server (NTRS)

Morell, Gerardo (Inventor); Makarov, Vladimir (Inventor); Varshney, Deepak (Inventor); Weiner, Brad (Inventor)

2013-01-01

The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

Diamond nucleation using polyethene

DOEpatents

Morell, Gerardo; Makarov, Vladimir; Varshney, Deepak; Weiner, Brad

2013-07-23

The invention presents a simple, non-destructive and non-abrasive method of diamond nucleation using polyethene. It particularly describes the nucleation of diamond on an electrically viable substrate surface using polyethene via chemical vapor deposition (CVD) technique in a gaseous environment.

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

NASA Astrophysics Data System (ADS)

Hei, Li-fu; Zhao, Yun; Wei, Jun-jun; Liu, Jin-long; Li, Cheng-ming; Lü, Fan-xiu

2017-12-01

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV- centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N2 incorporation and the high mobility of vacancies under growth temperatures of 950-1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

Polycrystalline CVD diamond device level modeling for particle detection applications

NASA Astrophysics Data System (ADS)

Morozzi, A.; Passeri, D.; Kanxheri, K.; Servoli, L.; Lagomarsino, S.; Sciortino, S.

2016-12-01

Diamond is a promising material whose excellent physical properties foster its use for radiation detection applications, in particular in those hostile operating environments where the silicon-based detectors behavior is limited due to the high radiation fluence. Within this framework, the application of Technology Computer Aided Design (TCAD) simulation tools is highly envisaged for the study, the optimization and the predictive analysis of sensing devices. Since the novelty of using diamond in electronics, this material is not included in the library of commercial, state-of-the-art TCAD software tools. In this work, we propose the development, the application and the validation of numerical models to simulate the electrical behavior of polycrystalline (pc)CVD diamond conceived for diamond sensors for particle detection. The model focuses on the characterization of a physically-based pcCVD diamond bandgap taking into account deep-level defects acting as recombination centers and/or trap states. While a definite picture of the polycrystalline diamond band-gap is still debated, the effect of the main parameters (e.g. trap densities, capture cross-sections, etc.) can be deeply investigated thanks to the simulated approach. The charge collection efficiency due to β -particle irradiation of diamond materials provided by different vendors and with different electrode configurations has been selected as figure of merit for the model validation. The good agreement between measurements and simulation findings, keeping the traps density as the only one fitting parameter, assesses the suitability of the TCAD modeling approach as a predictive tool for the design and the optimization of diamond-based radiation detectors.

Pulse height distribution and radiation tolerance of CVD diamond detectors

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; Bertuccio, G.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dangelo, P.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredotti, C.; Meier, D.; Mishina, M.; Moroni, L.; Oh, A.; Pan, L. S.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Procario, M.; Riester, J. L.; Roe, S.; Rousseau, L.; Rudge, A.; Russ, J.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Tromson, D.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Zoeller, M.; Fenyvesi, A.; Molnar, J.; Sohler, D.; RD42 Collaboration

2000-06-01

The paper reviews measurements of the radiation tolerance of CVD diamond for irradiation with 24 GeV/ c protons, 300 MeV/ c pions and 1 MeV neutrons. For proton and neutron irradiation, the measured charge signal spectrum is compared with the spectrum calculated by a model. Irradiation by particles causes radiation damage leading to a decrease of the charge signal. However, both the measurements and the outcome from the model shows that for tracker applications this drawback is at least partly counterbalanced by a narrowing of the distribution curve of the charge signal. In addition, we observed after proton irradiation at the charge signal spectrum a decrease of the number of small signals. As a result, the efficiency of a CVD diamond tracker is less affected by irradiation than the mean charge signal.

CVD-diamond-based position sensitive photoconductive detector for high-flux x-rays and gamma rays.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shu, D.

1999-04-19

A position-sensitive photoconductive detector (PSPCD) using insulating-type CVD diamond as its substrate material has been developed at the Advanced Photon Source (APS). Several different configurations, including a quadrant pattern for a x-ray-transmitting beam position monitor (TBPM) and 1-D and 2-D arrays for PSPCD beam profilers, have been developed. Tests on different PSPCD devices with high-heat-flux undulator white x-ray beam, as well as with gamma-ray beams from {sup 60}Co sources have been done at the APS and National Institute of Standards and Technology (NIST). It was proven that the insulating-type CVD diamond can be used to make a hard x-ray andmore » gamma-ray position-sensitive detector that acts as a solid-state ion chamber. These detectors are based on the photoconductivity principle. A total of eleven of these TBPMs have been installed on the APS front ends for commissioning use. The linear array PSPCD beam profiler has been routinely used for direct measurements of the undulator white beam profile. More tests with hard x-rays and gamma rays are planned for the CVD-diamond 2-D imaging PSPCD. Potential applications include a high-dose-rate beam profiler for fourth-generation synchrotrons radiation facilities, such as free-electron lasers.« less

Grating-assisted coupling to nanophotonic circuits in microcrystalline diamond thin films.

PubMed

Rath, Patrik; Khasminskaya, Svetlana; Nebel, Christoph; Wild, Christoph; Pernice, Wolfram Hp

2013-01-01

Synthetic diamond films can be prepared on a waferscale by using chemical vapour deposition (CVD) on suitable substrates such as silicon or silicon dioxide. While such films find a wealth of applications in thermal management, in X-ray and terahertz window design, and in gyrotron tubes and microwave transmission lines, their use for nanoscale optical components remains largely unexplored. Here we demonstrate that CVD diamond provides a high-quality template for realizing nanophotonic integrated optical circuits. Using efficient grating coupling devices prepared from partially etched diamond thin films, we investigate millimetre-sized optical circuits and achieve single-mode waveguiding at telecoms wavelengths. Our results pave the way towards broadband optical applications for sensing in harsh environments and visible photonic devices.

Optimization of chemical vapor deposition diamond films growth on steel: correlation between mechanical properties, structure, and composition.

PubMed

Laikhtman, A; Rapoport, L; Perfilyev, V; Moshkovich, A; Akhvlediani, R; Hoffman, A

2011-09-01

In the present work we perform optimization of mechanical and crystalline properties of CVD microcrystalline diamond films grown on steel substrates. A chromium-nitride (Cr-N) interlayer had been previously proposed to serve as a buffer for carbon and iron inter-diffusion and as a matching layer for the widely differing expansion coefficients of diamond and steel. However, adhesion and wear as well as crystalline perfection of diamond films are strongly affected by conditions of both Cr-N interlayer preparation and CVD diamond deposition. In this work we assess the effects of two parameters. The first one is the temperature of the Cr-N interlayer preparation: temperatures in the range of 500 degrees C-800 degrees C were used. The second one is diamond film thickness in the 0.5 microm-2 microm range monitored through variation of the deposition time from approximately 30 min to 2 hours. The mechanical properties of so deposited diamond films were investigated. For this purpose, scratch tests were performed at different indentation loads. The friction coefficient and wear loss were assessed. The mechanical and tribological properties were related to structure, composition, and crystalline perfection of diamond films which were extensively analyzed using different microscopic and spectroscopic techniques. It was found that relatively thick diamond film deposited on the Cr-N interlayer prepared at the temperature similar to that of the CVD process has the best mechanical and adhesion strength. This film was stable without visible cracks around the wear track during all scratch tests with different indentation loads. In other cases, cracking and delamination of the films took place at low to moderate indentation loads.

Parameterisation of radiation effects on CVD diamond for proton irradiation

NASA Astrophysics Data System (ADS)

Hartjes, F.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; White, C.; Zeuner, W.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-08-01

The paper reviews measurements of the radiation hardness of CVD diamond for 24 GeV/c proton irradiation at fluences up to 5 ∗10 15 protons/cm 2. The results not only show radiation damage but also an annealing effect that is dominant at levels around 10 15 protons/cm 2. A model describing both effects is introduced, enabling a prediction of the distribution curve of the charge signal for other levels.

Colour-causing defects and their related optoelectronic transitions in single crystal CVD diamond.

PubMed

Khan, R U A; Cann, B L; Martineau, P M; Samartseva, J; Freeth, J J P; Sibley, S J; Hartland, C B; Newton, M E; Dhillon, H K; Twitchen, D J

2013-07-10

Defects causing colour in nitrogen-doped chemical vapour-deposited (CVD) diamond can adversely affect the exceptional optical, electronic and spintronic properties of the material. Several techniques were used to study these defects, namely optical absorption spectroscopy, thermoluminescence (TL) and electron paramagnetic resonance (EPR). From our studies, the defects causing colour in nitrogen-doped CVD diamond are clearly not the same as those causing similar colour in natural diamonds. The brown colour arises due to a featureless absorption profile that decreases in intensity with increasing wavelength, and a broad feature at 360 nm (3.49 eV) that scales in intensity with it. Another prominent absorption band, centred at 520 nm (2.39 eV), is ascribed to the neutral nitrogen-vacancy-hydrogen defect. The defects responsible for the brown colour possess acceptor states that are 1.5 eV from the valence band (VB) edge. The brown colour is removed by heat treatment at 1600 ° C, whereupon new defects possessing shallow (<1 eV) trap states are generated.

Reproducibility of CVD diamond detectors for radiotherapy dosimetry

NASA Astrophysics Data System (ADS)

Betzel, G. T.; Lansley, S. P.; McKay, D.; Meyer, J.

2012-11-01

Three in-house X-ray detectors based on diamond chemical vapor deposition (CVD) from the same manufactured batch of single crystal films were investigated for their reproducibility. Leakage current, priming dose, response dynamics, dose linearity, dependence on dose rate and angular dependence were used to evaluate differences between detectors. Slight differences were seen in leakage currents before (<1.5 pA) and after (<12 pA) irradiation. A priming dose of ˜7 Gy and rise and fall times of 2 s were found for all three detectors. Sensitivities differed by up to 10%. Dependence on dose rate were similar (∆=0.92-0.94). Angular dependence was minimal (97-102% avg.). Differences in detector performance appeared to be primarily due to film thickness, which can significantly change sensitivities (nC Gy-1) and applied fields (V μm-1) for detectors with small sensitive volumes. Results suggest that preselection of CVD diamond films according to thickness in addition to material quality would be required to avoid individual calibration, which is performed for commercially available natural diamond detectors.

Influence of CVD diamond tips and Er:YAG laser irradiation on bonding of different adhesive systems to dentin.

PubMed

da Silva, Melissa Aline; Di Nicolo, Rebeca; Barcellos, Daphne Camara; Batista, Graziela Ribeiro; Pucci, Cesar Rogerio; Rocha Gomes Torres, Carlos; Borges, Alessandra Bühler

2013-01-01

The aim of this study was to compare the microtensile bond strength of three adhesive systems, using different methods of dentin preparation. A hundred and eight bovine teeth were used. The dentin from buccal face was exposed and prepared with three different methods, divided in 3 groups: Group 1 (DT)- diamond tip on a high-speed handpiece; Group 2 (CVD)-CVD tip on a ultrasonic handpiece; Group 3 (LA)-Er: YAG laser. The teeth were divided into 3 subgroups, according adhesive systems used: Subgroup 1-Adper Single Bond Plus/3M ESPE (SB) total-etch adhesive; Subgroup 2-Adper Scotchbond SE/3M ESPE (AS) selfetching adhesive; Subgroup 3-Clearfil SE Bond/Kuraray (CS) selfetching adhesive. Blocks of composite (Filtek Z250-3M ESPE) 4 mm high were built up and specimens were stored in deionized water for 24 hours at 37°C. Serial mesiodistal and buccolingual cuts were made and stick-like specimens were obtained, with transversal section of 1.0 mm(2). The samples were submitted to microtensile test at 1 mm/min and load of 10 kg in a universal testing machine. Data (MPa) were subjected to ANOVA and Tukey's tests (p < 0.05). Surface treatment with Diamond or CVD tips associated with Clearfil SE Bond adhesive produced significantly lower bond strength values compared to other groups. Surface treatment with Er: YAG laser associated with Single Bond Plus or Clearfil SE Bond adhesives and surface treatment with CVD tip associated with Adper Scotchbond SE adhesive produced significantly lower bond strength values compared to surface treatment with diamond or CVD tips associated with Single Bond Plus or Adper Scotchbond SE adhesives. Interactions between laser and the CVD tip technologies and the different adhesive systems can produce a satisfactory bonding strength result, so that these associations may be beneficial and enhance the clinical outcomes.

Analysis of synthetic diamond single crystals by X-ray topography and double-crystal diffractometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prokhorov, I. A., E-mail: igor.prokhorov@mail.ru; Ralchenko, V. G.; Bolshakov, A. P.

2013-12-15

Structural features of diamond single crystals synthesized under high pressure and homoepitaxial films grown by chemical vapor deposition (CVD) have been analyzed by double-crystal X-ray diffractometry and topography. The conditions of a diffraction analysis of diamond crystals using Ge monochromators have been optimized. The main structural defects (dislocations, stacking faults, growth striations, second-phase inclusions, etc.) formed during crystal growth have been revealed. The nitrogen concentration in high-pressure/high-temperature (HPHT) diamond substrates is estimated based on X-ray diffraction data. The formation of dislocation bundles at the film-substrate interface in the epitaxial structures has been revealed by plane-wave topography; these dislocations are likelymore » due to the relaxation of elastic macroscopic stresses caused by the lattice mismatch between the substrate and film. The critical thicknesses of plastic relaxation onset in CVD diamond films are calculated. The experimental techniques for studying the real diamond structure in optimizing crystal-growth technology are proven to be highly efficient.« less

An analysis of the specificity of defects embedded into (1 0 0) and (1 1 1) faceted CVD diamond microcrystals grown on Si and Mo substrates by using E/H field discharge

NASA Astrophysics Data System (ADS)

Nasieka, Iurii; Strelchuk, Victor; Naseka, Victor; Stubrov, Yuriy; Dudnik, Stanislav; Gritsina, Vasiliy; Opalev, Oleg; Koshevoy, Konstantin; Strel'nitskij, Vladimir; Tkach, Vasyl; Boyko, Mykola; Antypov, Ievgen

2018-06-01

The PE CVD method with magnetic field discharge stabilization was applied for the growth of arrays of freestanding diamond grains (island films) as well as continuous films on Mo and Si substrates with (1 1 1) and (1 0 0) faceted microcrystals, respectively. Raman, SEM, XRD and PL methods were used for search of the specific features of defects embedded into (1 0 0) and (1 1 1) faceted grains. The main characteristic differences in the defect states of the diamond island films grown on Si and Mo substrates with (1 0 0) and (1 1 1) faceted diamond microcrystals were discussed on the base of the experimental data.

Zero bias thermally stimulated currents in synthetic diamond

NASA Astrophysics Data System (ADS)

Mori, R.; Miglio, S.; Bruzzi, M.; Bogani, F.; De Sio, A.; Pace, E.

2009-06-01

Zero bias thermally stimulated currents (ZBTSCs) have been observed in single crystal high pressure high temperature (HPHT) and polycrystalline chemical vapor deposited (pCVD) diamond films. The ZBTSC technique is characterized by an increased sensitivity with respect to a standard TSC analysis. Due to the absence of the thermally activated background current, new TSC peaks have been observed in both HPHT and pCVD diamond films, related to shallow activation energies usually obscured by the emission of the dominant impurities. The ZBTSC peaks are explained in terms of defect discharge in the nonequilibrium potential distribution created by a nonuniform traps filling at the metal-diamond junctions. The electric field due to the charged defects has been estimated in a quasizero bias TSC experiment by applying an external bias.

Orientation effect in d(d,n)3He reaction initiated by 20 keV deuterons at channeling in textured CVD-Diamond target

NASA Astrophysics Data System (ADS)

Bagulya, A. V.; Dalkarov, O. D.; Negodaev, M. A.; Pivovarov, Yu. L.; Rusetskii, A. S.; Tukhfatullin, T. A.

2017-07-01

Orientation effect of increasing the enhancement factor of DD-reaction in CVD-Diamond was investigated by simulation. It is obtained that the flux peaking effect up to 2.2 times increases the relative enhancement factor for a parallel beam and up to 1.2 times for the deuteron beam with angular divergence equals 3 critical channeling angles. Qualitative agreement with the experiment was obtained.

Effects of Surface Treatments on Secondary Electron Emission from CVD Diamond Films

NASA Technical Reports Server (NTRS)

Mearini, G. T.; Krainsky, I. L.; Dayton, J. A., Jr.; Zorman, Christian; Wang, Yaxin; Lamouri, A.

1995-01-01

Secondary electron emission (SEE) properties of polycrystalline diamond films grown by chemical vapor deposition (CVD) were measured. The total secondary yield (sigma) from as-grown samples was observed to be as high as 20 at room temperature and 48 while heating at 700 K in vacuum. Electron-beam-activated, alkali-terminated diamond films have shown stable values of sigma as high as 60 when coated with CsI and similarly high values when coated with other alkali halides. Diamond coated with BaF2 had a stable sigma of 6, but no enhancement of the SEE properties was observed with coatings of Ti or Au. Hydrogen was identified to give rise to this effect in as-grown films. However, electron beam exposure led to a reduction in sigma values as low as 2. Exposure to a molecular hydrogen environment restored sigma to its original value after degradation, and enabled stable secondary emission during electron beam exposure. Atomic hydrogen and hydrogen plasma treatments were performed on diamond/Mo samples in an attempt to increase the near-surface hydrogen concentration which might lead to increased stability in the secondary emission. Raman scattering analysis, scanning electron microscopy, and Auger electron spectroscopy (AES) confirmed that hydrogen plasma and atomic hydrogen treatments improved the quality of the CVD diamond significantly. Elastic recoil detection (ERD) showed that heating as-grown diamond targets to 7OO K, which was correlated with an increase in sigma, removed contaminants from the surface but did not drive hydrogen from the diamond bulk. ERD showed that the hydrogen plasma treatment produced an increase in the hydrogen concentration in the near-surface region which did not decrease while heating in vacuum at 700 K, but no improvement in the SEE properties was observed.

Innovative Techniques for the Production of Low Cost 2D Laser Diode Arrays. Supplies or Services and Prices/Costs

DTIC Science & Technology

1991-12-31

continue on facet coatings, PL correlation to device performance, and CVD diamond. All global issues mentioned in Section 2.0 will be addresses and...The CVD diamond submounts will be hermetically sealed, electrically isolated and liquid cooled. (Deliverables: 5 5-bar arrays.) The following global ... issues not mentioned above will be investigated continuously throughout all four phases of this program: (1) design and development of a mask set to

Investigation of laser ablation of CVD diamond film

NASA Astrophysics Data System (ADS)

Chao, Choung-Lii; Chou, W. C.; Ma, Kung-Jen; Chen, Ta-Tung; Liu, Y. M.; Kuo, Y. S.; Chen, Ying-Tung

2005-04-01

Diamond, having many advanced physical and mechanical properties, is one of the most important materials used in the mechanical, telecommunication and optoelectronic industry. However, high hardness value and extreme brittleness have made diamond extremely difficult to be machined by conventional mechanical grinding and polishing. In the present study, the microwave CVD method was employed to produce epitaxial diamond films on silicon single crystal. Laser ablation experiments were then conducted on the obtained diamond films. The underlying material removal mechanisms, microstructure of the machined surface and related machining conditions were also investigated. It was found that during the laser ablation, peaks of the diamond grains were removed mainly by the photo-thermal effects introduced by excimer laser. The diamond structures of the protruded diamond grains were transformed by the laser photonic energy into graphite, amorphous diamond and amorphous carbon which were removed by the subsequent laser shots. As the protruding peaks gradually removed from the surface the removal rate decreased. Surface roughness (Ra) was improved from above 1μm to around 0.1μm in few minutes time in this study. However, a scanning technique would be required if a large area was to be polished by laser and, as a consequence, it could be very time consuming.

Friction and fretting wear characteristics of different diamond-like carbon coatings against alumina in water-lubricated fretting conditions.

PubMed

Watabe, Tsukasa; Amanov, Auezhan; Tsuboi, Ryo; Sasaki, Shinya

2013-12-01

Diamond-like carbon (DLC) coatings typically show low friction and high wear resistance. In this study, the friction and fretting wear characteristics of PVD, CVD and CVD-Si DLC coatings were investigated against an alumina (Al2O3) ball under water-lubricated fretting conditions. The objective of this study is to investigate and compare the friction and fretting wear characteristics of those DLC coatings at various fretting frequencies. The test results showed that the PVD DLC coating led to a lower friction coefficient and a higher resistance to fretting wear compared to those of the CVD and CVD-Si DLC coatings. However, the CVD DLC coating showed that the fretting wear resistance decreases with increasing frequency, while no significant difference in fretting wear resistances of the PVD and CVD-Si DLC coatings was observed. Quantitative surface analyses of the specimens were performed using an energy dispersive spectroscopy (EDS), a laser scanning microscope (LSM), a scanning electron microscope (SEM), an atomic force microscope (AFM) and the Raman spectroscopy.

Enhanced growth and osteogenic differentiation of human osteoblast-like cells on boron-doped nanocrystalline diamond thin films.

PubMed

Grausova, Lubica; Kromka, Alexander; Burdikova, Zuzana; Eckhardt, Adam; Rezek, Bohuslav; Vacik, Jiri; Haenen, Ken; Lisa, Vera; Bacakova, Lucie

2011-01-01

Intrinsic nanocrystalline diamond (NCD) films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like), the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH(4):H(2) gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films) to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively). The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000 ± 14,000 and 152,000 ± 10,000 cells/cm(2), respectively, compared to 113,000 ± 10,000 cells/cm(2) on undoped NCD films). As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells.

Enhanced Growth and Osteogenic Differentiation of Human Osteoblast-Like Cells on Boron-Doped Nanocrystalline Diamond Thin Films

PubMed Central

Grausova, Lubica; Kromka, Alexander; Burdikova, Zuzana; Eckhardt, Adam; Rezek, Bohuslav; Vacik, Jiri; Haenen, Ken; Lisa, Vera; Bacakova, Lucie

2011-01-01

Intrinsic nanocrystalline diamond (NCD) films have been proven to be promising substrates for the adhesion, growth and osteogenic differentiation of bone-derived cells. To understand the role of various degrees of doping (semiconducting to metallic-like), the NCD films were deposited on silicon substrates by a microwave plasma-enhanced CVD process and their boron doping was achieved by adding trimethylboron to the CH4:H2 gas mixture, the B∶C ratio was 133, 1000 and 6700 ppm. The room temperature electrical resistivity of the films decreased from >10 MΩ (undoped films) to 55 kΩ, 0.6 kΩ, and 0.3 kΩ (doped films with 133, 1000 and 6700 ppm of B, respectively). The increase in the number of human osteoblast-like MG 63 cells in 7-day-old cultures on NCD films was most apparent on the NCD films doped with 133 and 1000 ppm of B (153,000±14,000 and 152,000±10,000 cells/cm2, respectively, compared to 113,000±10,000 cells/cm2 on undoped NCD films). As measured by ELISA per mg of total protein, the cells on NCD with 133 and 1000 ppm of B also contained the highest concentrations of collagen I and alkaline phosphatase, respectively. On the NCD films with 6700 ppm of B, the cells contained the highest concentration of focal adhesion protein vinculin, and the highest amount of collagen I was adsorbed. The concentration of osteocalcin also increased with increasing level of B doping. The cell viability on all tested NCD films was almost 100%. Measurements of the concentration of ICAM-1, i.e. an immunoglobuline adhesion molecule binding inflammatory cells, suggested that the cells on the NCD films did not undergo significant immune activation. Thus, the potential of NCD films for bone tissue regeneration can be further enhanced and tailored by B doping and that B doping up to metallic-like levels is not detrimental for cells. PMID:21695172

FIB and CVD Fabrication of Carbon Nanostructures on Diamond and Quartz Substrates

DTIC Science & Technology

2011-03-29

reveal non-linear conductivity, current injection trough insulating diamond, bistability of current flow, and coulomb blockade at room temperature...insulating diamond, bistability of current flow, and coulomb blockade at room temperature. Also we developed methods of fabrication of large uniform...T. Midletton, A. De Stefano, "Characterization of Pink Diamonds of Different Origin: Natural from Argyle, Irradiated, HPHT treated, Treated with

Structure and wettability property of the growth and nucleation surfaces of thermally treated freestanding CVD diamond films

NASA Astrophysics Data System (ADS)

Pei, Xiaoqiang; Cheng, Shaoheng; Ma, Yibo; Wu, Danfeng; Liu, Junsong; Wang, Qiliang; Yang, Yizhou; Li, Hongdong

2015-08-01

This paper reports the surface features and wettability properties of the (1 0 0)-textured freestanding chemical vapor deposited (CVD) diamond films after thermal exposure in air at high temperature. Thermal oxidation at proper conditions eliminates selectively nanodiamonds and non-diamond carbons in the films. The growth side of the films contains (1 0 0)-oriented micrometer-sized columns, while its nucleation side is formed of nano-sized tips. The examined wettability properties of the as-treated diamond films reveal a hydrophilicity and superhydrophilicity on the growth surface and nucleation surface, respectively, which is determined by oxygen termination and geometry structure of the surface. When the surface termination is hydrogenated, the wettability of nucleation side converted from superhydrophilicity to high hydrophobicity, while the hydrophilicity of the growth side does not change significantly. The findings open a possibility for realizing freestanding diamond films having not only novel surface structures but also multifunction applications, especially proposed on the selected growth side or nucleation side in one product.

Thin CVD-diamond RF Pill-Box vacuum windows for LHCD systems

NASA Astrophysics Data System (ADS)

Ravera, G. L.; Ceccuzzi, S.; Cardinali, A.; Cesario, R.; Mirizzi, F.; Schettini, G.; Tuccillo, A. A.

2014-02-01

The preliminary assessment of a Lower Hybrid Current Drive (LHCD) system for the DEMOnstration power plant (DEMO) is mainly focused on the R&D needs of the less conventional RF components of the Main Transmission Line (MTL) and of the launcher. 500 kW, CW klystrons will be used to deliver the RF power to independent Passive Active Multijunction (PAM) launcher modules at 5 GHz. This paper describes the criteria followed to investigate the optimum solution for the RF window used as vacuum barrier between the MTL and the launcher, an open issue in the LHCD system for ITER too. The best candidate, capable of withstanding a power level of, or above, 0.5 MW in CW operation and to satisfy the electrical and thermonuclear requirements, is a Pill-Box assembly, based on a thin single disk of CVD-diamond as dielectric, water cooled at the edge. A thickness of 3 mm, much shorter than half a wavelength of the TE°11 mode in the dielectric as in the conventional window (unfeasible and too expensive with CVD-diamond at these frequencies), is sufficient to limit the exerted stress at the edge under the fracture stress for a maximum pressure applied of 0.9 MPa. In this paper the simulation results of conventional and thin CVD-diamond vacuum windows are presented comparing S-parameters, losses and electric fields in both matching condition and with VSWR = 2, using WR284 and WR229 as input/output rectangular waveguide.

A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

DTIC Science & Technology

2012-11-01

microwave plasma-enhanced CVD (MPE-CVD) with presputtered metal catalyst, and floating catalyst thermal CVD (FCT-CVD) with xylene and ferrocene liquid...processes with nickel and iron catalysts, respectively. For the FCT-CVD approach, ferrocene is used as an iron source to promoteCNT growth. Based on...furnace is ramped up to the growth temperature of 750∘C. Ferrocene was dissolved into a xylene solvent in a 0.008 : 1molar volume ratio.The xylene

Multiple delta doping of single crystal cubic boron nitride films heteroepitaxially grown on (001)diamonds

NASA Astrophysics Data System (ADS)

Yin, H.; Ziemann, P.

2014-06-01

Phase pure cubic boron nitride (c-BN) films have been epitaxially grown on (001) diamond substrates at 900 °C. The n-type doping of c-BN epitaxial films relies on the sequential growth of nominally undoped (p-) and Si doped (n-) layers with well-controlled thickness (down to several nanometer range) in the concept of multiple delta doping. The existence of nominally undoped c-BN overgrowth separates the Si doped layers, preventing Si dopant segregation that was observed for continuously doped epitaxial c-BN films. This strategy allows doping of c-BN films can be scaled up to multiple numbers of doped layers through atomic level control of the interface in the future electronic devices. Enhanced electronic transport properties with higher hall mobility (102 cm2/V s) have been demonstrated at room temperature as compared to the normally continuously Si doped c-BN films.

Low temperature growth of diamond films on optical fibers using Linear Antenna CVD system

NASA Astrophysics Data System (ADS)

Ficek, M.; Drijkoningen, S.; Karczewski, J.; Bogdanowicz, R.; Haenen, K.

2016-01-01

It is not trivial to achieve a good quality diamond-coated fibre interface due to a large difference in the properties and composition of the diamond films (or use coating even) and the optical fibre material, i.e. fused silica. One of the biggest problems is the high temperature during the deposition which influences the optical fibre or optical fibre sensor structure (e.g. long-period gratings (LPG)). The greatest advantage of a linear antenna microwave plasma enhanced chemical vapor deposition system (LA MW CVD) is the fact that it allows to grow the diamond layers at low temperature (below 300°C) [1]. High quality nanocrystalline diamond (NCD) thin films with thicknesses ranging from 70 nm to 150 nm, were deposited on silicon, glass and optical fibre substrates [2]. Substrates pretreatment by dip-coating and spin coating process with a dispersion consisting of detonation nanodiamond (DND) in dimethyl sulfoxide (DMSO) with polyvinyl alcohol (PVA) has been applied. During the deposition process the continuous mode of operation of the LA MW CVD system was used, which produces a continuous wave at a maximum power of 1.9 kW (in each antenna). Diamond films on optical fibres were obtained at temperatures below 350°C, providing a clear improvement of results compared to our earlier work [3]. The samples were characterized by scanning electron microscopy (SEM) imaging to investigate the morphology of the nanocrystalline diamond films. The film growth rate, film thickness, and optical properties in the VIS-NIR range, i.e. refractive index and extinction coefficient will be discussed based on measurements on reference quartz plates by using spectroscopic ellipsometry (SE).

CVD diamond detectors for ionizing radiation

NASA Astrophysics Data System (ADS)

Friedl, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernegger, H.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-10-01

In future HEP accelerators, such as the LHC (CERN), detectors and electronics in the vertex region of the experiments will suffer from extreme radiation. Thus radiation hardness is required for both detectors and electronics to survive in this harsh environment. CVD diamond, which is investigated by the RD42 Collaboration at CERN, can meet these requirements. Samples of up to 2×4 cm2 have been grown and refined for better charge collection properties, which are measured with a β source or in a testbeam. A large number of diamond samples has been irradiated with hadrons to fluences of up to 5×10 15 cm-2 to study the effects of radiation. Both strip and pixel detectors were prepared in various geometries. Samples with strip metallization have been tested with both slow and fast readout electronics, and the first diamond pixel detector proved fully functional with LHC electronics.

Status of diamond particle detectors

NASA Astrophysics Data System (ADS)

Krammer, M.; Adam, W.; Bauer, C.; Berdermann, E.; Bogani, F.; Borchi, E.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fish, D.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Kass, R.; Knöpfle, K. T.; Manfredi, P. F.; Meier, D.; Mishina, M.; LeNormand, F.; Pan, L. S.; Pernegger, H.; Pernicka, M.; Re, V.; Riester, G. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Tapper, R. J.; Tesarek, R.; Thomson, G. B.; Trawick, M.; Trischuk, W.; Turchetta, R.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Ziock, H.; Zoeller, M.

1998-11-01

To continue the exciting research in the field of particle physics new accelerators and experiments are under construction. In some of these experiments, e.g. ATLAS and CMS at the Large Hadron Collider at CERN or HERA-B at DESY, the detectors have to withstand an extreme environment. The detectors must be radiation hard, provide a very fast signal, and be as thin as possible. The properties of CVD diamond allow to fulfill these requirements and make it an ideal material for the detectors close to the interaction region of these experiments, i.e. the vertex detectors or the inner trackers. The RD42 collaboration is developing diamond detectors for these applications. The program of RD42 includes the improvement of the charge collection properties of CVD diamond, the study of the radiation hardness and the development of low-noise radiation hard readout electronics. An overview of the progress achieved during the last years will be given.

EDC-mediated DNA attachment to nanocrystalline CVD diamond films.

PubMed

Christiaens, P; Vermeeren, V; Wenmackers, S; Daenen, M; Haenen, K; Nesládek, M; vandeVen, M; Ameloot, M; Michiels, L; Wagner, P

2006-08-15

Chemical vapour deposited (CVD) diamond is a very promising material for biosensor fabrication owing both to its chemical inertness and the ability to make it electrical semiconducting that allows for connection with integrated circuits. For biosensor construction, a biochemical method to immobilize nucleic acids to a diamond surface has been developed. Nanocrystalline diamond is grown using microwave plasma-enhanced chemical vapour deposition (MPECVD). After hydrogenation of the surface, 10-undecenoic acid, an omega-unsaturated fatty acid, is tethered by 254 nm photochemical attachment. This is followed by 1-ethyl-3-[3-dimethylaminopropyl]carbodiimide (EDC)-mediated attachment of amino (NH(2))-modified dsDNA. The functionality of the covalently bound dsDNA molecules is confirmed by fluorescence measurements, PCR and gel electrophoresis during 35 denaturation and rehybridisation steps. The linking method after the fatty acid attachment can easily be applied to other biomolecules like antibodies and enzymes.

Evaluation of a 3D diamond detector for medical radiation dosimetry

NASA Astrophysics Data System (ADS)

Kanxheri, K.; Servoli, L.; Oh, A.; Munoz Sanchez, F.; Forcolin, G. T.; Murphy, S. A.; Aitkenhead, A.; Moore, C. J.; Morozzi, A.; Passeri, D.; Bellini, M.; Corsi, C.; Lagomarsino, S.; Sciortino, S.

2017-01-01

Synthetic diamond has several properties that are particularly suited to applications in medical radiation dosimetry. It is tissue equivalent, not toxic and shows a high resistance to radiation damage, low leakage current and stability of response. It is an electrical insulator, robust and realizable in small size; due to these features there are several examples of diamond devices, mainly planar single-crystalline chemical vapor depositation (sCVD) diamond, used for relative dose measurement in photon beams. Thanks to a new emerging technology, diamond devices with 3-dimensional structures are produced by using laser pulses to create graphitic paths in the diamond bulk. The necessary bias voltage to operate such detector decreases considerably while the signal response and radiation resistance increase. In order to evaluate the suitability of this new technology for measuring the dose delivered by radiotherapy beams in oncology a 3D polycrystalline (pCVD) diamond detector designed for single charged particle detection has been tested and the photon beam profile has been studied. The good linearity and high sensitivity to the dose observed in the 3D diamond, opens the way to the possibility of realizing a finely segmented device with the potential for dose distribution measurement in a single exposure for small field dosimetry that nowadays is still extremely challenging.

AuCl3 doping-induced conductive unstability for CVD-grown graphene on glass substrate

NASA Astrophysics Data System (ADS)

Wang, Jiaqing; Liu, Xianming; Cao, Xueying; Zhang, Peng; Lei, Xiaohua; Chen, Weimin

2017-09-01

Graphene is a candidate material for next-generation high performance transparent conducting film (TCF) to replace indium tin oxide (ITO) materials. However, the sheet resistance of large area graphene obtained by the chemical vapor deposition (CVD) method is higher than other kinds of TCFs. The main strategies for improving the electrical conductivity of graphene films have been based on various doping treatments. AuCl3 is one of the most effective dopants. In this paper, we investigate the influence of AuCl3 doping on the conductive stability of CVD-grown graphene. Large area graphene film synthesized by CVD and transferred to glass substrates is taken as experimental sample. AuCl3 in nitromethane is used to dope the graphene films to improve the electrical conductivity. Another sample without doping is prepared for comparison. The resistances of graphene under periodic visible light irradiation with and without AuCl3 doping are measured. Results show that the resistances for all samples increase exponentially under lighting, while decrease slowly in an exponential form as well after the light is switched off. The relative resistance changes for undoped and doped samples are compared under 445nm light irradiation with 40mW/cm2, 60mW/cm2, 80mW/cm2, 100mW/cm2 in atmosphere and vacuum. The change rate and degree for doped graphene are greater than that of undoped graphene. It is evident from the experimental data that AuCl3 doping may induce conductive unstability for CVD-grown graphene on glass substrate.

Superconductivity in CVD diamond films.

PubMed

Takano, Yoshihiko

2009-06-24

A beautiful jewel of diamond is insulator. However, boron doping can induce semiconductive, metallic and superconducting properties in diamond. When the boron concentration is tuned over 3 × 10(20) cm(-3), diamonds enter the metallic region and show superconductivity at low temperatures. The metal-insulator transition and superconductivity are analyzed using ARPES, XAS, NMR, IXS, transport and magnetic measurements and so on. This review elucidates the physical properties and mechanism of diamond superconductor as a special superconductivity that occurs in semiconductors.

Fluorescence and Raman Spectroscopy of Doped Nanodiamonds

NASA Astrophysics Data System (ADS)

Kudryavtsev, O. S.; Khomich, A. A.; Sedov, V. S.; Ekimov, E. A.; Vlasov, I. I.

2018-05-01

Raman and fluorescence spectroscopic techniques were used to study doped nanodiamonds synthesized at high pressure and high temperature (HPHT technique) and by chemical vapor deposition from the gas phase (CVD technique). For the CVD diamonds, a hundred-fold increase in fluorescence intensity of the silicon-vacancy centers normalized to the volume of the probe material was observed with an increase in synthesized diamond particle diameter from 150 to 300 nm. Graphitization temperature upon heating in the air significantly lower than for detonation nanodiamonds was found for the boron-doped HPHT nanodiamonds.

Growth, Characterization and Device Development in Monocrystalline Diamond Films

DTIC Science & Technology

1988-06-01

ABSTRACT (ContMut on reverse,*i nauar and .dnr,A, A. W, -,,,I !Cu single crystals have been grown and prepared for use as a lattice matched substrate. A...literature survey of potential substrates which are both lattice and energy matched with diamond to promote two-dimensional growth has also been...first reported high resolution lattice imaging of CVD diamond. Diamond power MESFET devices have been theoretically evaluated and found to be capable

Lateral overgrowth of diamond film on stripes patterned Ir/HPHT-diamond substrate

NASA Astrophysics Data System (ADS)

Wang, Yan-Feng; Chang, Xiaohui; Liu, Zhangcheng; Liu, Zongchen; Fu, Jiao; Zhao, Dan; Shao, Guoqing; Wang, Juan; Zhang, Shaopeng; Liang, Yan; Zhu, Tianfei; Wang, Wei; Wang, Hong-Xing

2018-05-01

Epitaxial lateral overgrowth (ELO) of diamond films on patterned Ir/(0 0 1)HPHT-diamond substrates have been carried out by microwave plasma CVD system. Ir/(0 0 1)HPHT-diamond substrates are fabricated by photolithographic and magnetron sputtering technique. The morphology of the as grown ELO diamond film is characterized by optical microscopy and scanning electronic microscopy. The quality and stress of the ELO diamond film are investigated by surface etching pit density and micro-Raman spectroscopy. Two ultraviolet photodetectors are fabricated on ELO diamond area and non-ELO diamond area prepared on same substrate, and that one on ELO diamond area indicates better photoelectric properties. All results indicate quality of ELO diamond film is improved.

The CRDS method application for study of the gas-phase processes in the hot CVD diamond thin film.

NASA Astrophysics Data System (ADS)

Buzaianumakarov, Vladimir; Hidalgo, Arturo; Morell, Gerardo; Weiner, Brad; Buzaianu, Madalina

2006-03-01

For detailed analysis of problem related to the hot CVD carbon-containing nano-material growing, we have to detect different intermediate species forming during the growing process as well as investigate dependences of concentrations of these species on different experimental parameters (concentrations of the CJH4, H2S stable chemical compounds and distance from the filament system to the substrate surface). In the present study, the HS and CS radicals were detected using the Cavity Ring Down Spectroscopic (CRDS) method in the hot CVD diamond thin film for the CH4(0.4 %) + H2 mixture doped by H2S (400 ppm). The absolute absorption density spectra of the HS and CS radicals were obtained as a function of different experimental parameters. This study proofs that the HS and CS radicals are an intermediate, which forms during the hot filament CVD process. The kinetics approach was developed for detailed analysis of the experimental data obtained. The kinetics scheme includes homogenous and heterogenous processes as well as processes of the chemical species transport in the CVD chamber.

Synthesis of SiV-diamond particulates via the microwave plasma chemical deposition of ultrananocrystalline diamond on soda-lime glass fibers

NASA Astrophysics Data System (ADS)

Kunuku, Srinivasu; Chen, Yen-Chun; Yeh, Chien-Jui; Chang, Wen-Hao; Manoharan, Divinah; Leou, Keh-Chyang; Lin, I.-Nan

2016-10-01

We report the synthesis of silicon-vacancy (SiV) incorporated spherical shaped ultrananocrystalline diamond (SiV-UNCD) particulates (size ∼1 μm) with bright luminescence at 738 nm. For this purpose, different granular structured polycrystalline diamond films and particulates were synthesized by using three different kinds of growth plasma conditions on the three types of substrate materials in the microwave plasma enhanced CVD process. The grain size dependent photoluminescence properties of nitrogen vacancy (NV) and SiV color centers have been investigated for different granular structured diamond samples. The luminescence of NV center and the associated phonon sidebands, which are usually observed in microcrystalline diamond and nanocrystalline diamond films, were effectively suppressed in UNCD films and UNCD particulates. Micron sized SiV-UNCD particulates with bright SiV emission has been attained by transfer of SiV-UNCD clusters on soda-lime glass fibers to inverted pyramidal cavities fabricated on Si substrates by the simple crushing of UNCD/soda-lime glass fibers in deionized water and ultrasonication. Such a plasma enhanced CVD process for synthesizing SiV-UNCD particulates with suppressed NV emission is simple and robust to attain the bright SiV-UNCD particulates to employ in practical applications.

Electron emission from chemical vapor deposited diamond and amorphous carbon films observed with a simple field emission device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Z.; Brown, I.G.; Ager, J.W. III

Electron emission from chemical vapor deposited (CVD) diamond and amorphous carbon (a-C) films was observed with a simple field emission device (FED). Both diamond and a-C films were prepared with microwave plasma-enhanced CVD techniques. Electron emission in the field strength range +10 to {minus}10 MVm{sup {minus}1} was studied, and the field emission source was confirmed by a diode characteristic of the {ital I}-{ital V} curve, a straight line in the Fowler--Nordheim (F-N) plot, and direct observation of light emission from a fluorescent screen. The turn-on field strength was {similar_to}5 MVm{sup {minus}1}, which was similar for both kinds of carbon films.more » The highest current density for diamond films, observed at a field strength of 10 MVm{sup {minus}1}, was {similar_to}15 {mu}A cm{sup {minus}2}. Diamond films yielded a higher emission current than a-C films. The reasons for the observed field emission are discussed.« less

Carrier dynamics in silicon nanowires studied using optical-pump terahertz-probe spectroscopy

NASA Astrophysics Data System (ADS)

Beaudoin, Alexandre; Salem, Bassem; Baron, Thierry; Gentile, Pascal; Morris, Denis

2014-03-01

The advance of non-contact measurements involving pulsed terahertz radiation presents great interests for characterizing electrical properties of a large ensemble of nanowires. In this work, N-doped and undoped silicon nanowires (SiNWs) grown by chemical vapour deposition (CVD) on quartz substrate were characterized using optical-pump terahertz probe (OPTP) transmission experiments. Our results show that defects and ionized impurities introduced by N-doping the CVD-grown SiNWs tend to reduce the photoexcited carrier lifetime and degrade their conductivity properties. Capture mechanisms by the surface trap states play a key role on the photocarrier dynamics in theses small diameters' (~100 nm) SiNWs and the doping level is found to alter this dynamics. We propose convincing capture and recombination scenarios that explain our OPTP measurements. Fits of our photoconductivity data curves, from 0.5 to 2 THz, using a Drude-plasmon conductivity model allow determining photocarrier mobility values of 190 and 70 cm2/V .s, for the undoped and N-doped NWs samples, respectively.

Freestanding diamond films: plates, tubes, and curved diaphragms

NASA Astrophysics Data System (ADS)

Obata, Tatsuo; Morimoto, Shingo

1990-01-01

Free-standing diamond films are prepared by CVD technique to examine their properties directly. The products have a variety of shapes such as plates, tubes and curved diaphragms. Coefficients of thermal expansion (GTE) of the tube are similar to the values of a bulk diamond in the range from 40°C to 500°C. It is found that polished diamond film has uniform infrared transmission ranging from 500cm-1 to 4000cm-1. A speaker diaphragm will be a good application for free-standing diamond film.

Pushing the boundaries of high power lasers: low loss, large area CVD diamond

NASA Astrophysics Data System (ADS)

Wickham, Benjamin; Schoofs, Frank; Olsson-Robbie, Stefan; Bennett, Andrew; Balmer, Richard

2018-02-01

Synthetic CVD diamond has exceptional properties, including broad spectral transmission, physical and chemical robustness, and the highest thermal conductivity of any known material, making diamond an attractive material for medium to high power optical and laser applications, minimizing the detrimental effects of thermal lensing and radiation damage. Example applications include ATR prisms, Raman laser crystals, extra- and intra-cavity laser cooling. In each case the demands on the fundamental material properties and fabrication routes are slightly different. In recent years, there has been good progress in the development of low-loss, single crystal diamond, suitable for higher power densities, higher pulse rates and more demanding intra- and extra-cavity thermal management. The adoption of single crystal diamond in this area has however, been hindered by the availability of large area, low birefringence plates. To address this, we report a combination of CVD growth and processing methods that have enabled the manufacture of large, low defect substrates. A final homoepitaxial, low absorption synthesis stage has produced plates with large area (up to 16 mm edge length), low absorption (α<0.005 cm-1 at 1064 nm), and low birefringence (Δn <10-5), suitable for double-sided intra-cavity cooling. We demonstrate the practical advances in synthesis, including increasing the size while reducing in-use losses compared to previous generations of single crystal material, and practical developments in processing and implementation of the single crystal diamond parts, optimizing them for use in a state-of-the-art femto-second pulsed Ti:Sa thin disk gain module, all made in collaboration with the wider European FP7 funded Ti:Sa TD consortium.

Diamond Technology Initiative

DTIC Science & Technology

1994-05-01

thermal stresses of 10 million Watts per meter, 1,000 times better than Zerodur *. This property is also important for many thermal management...products UTD has coated to date include: • Optical windows, lenses, and mirrors . Zinc sulfide infrared windows coated with a 2.5 micron-thick...implants 16, 49 microwave plasma-enhanced CVD 2 mirrors , diamond-coated 49 models of diamond growth 10, 25, 33, 34, 39 moderators 10

A thermal-sensitive device fabricated with diamond film and a planar microelectrode

DOE Office of Scientific and Technical Information (OSTI.GOV)

Changzhi Gu; Zengsun Jin; Xianyi Lu

1995-12-31

Polycrystalline diamond film were deposited by means of the hot filament CVD technique (HFCVD) onto a planar interdigital Ti microelectrode arrays, and forming a thermal-sensitive device, The resistor changes of diamond film caused by temperature are shown to be sensitive, reproducible, rapid and stable thermal-sensitive device. The characteristics of thermal-sensitive for this device was study. Functionalized diamond film deposited onto planar microelectrode arrays can easily detect temperature from 20{degrees}C to 700{degrees}C.

The In Situ Observation of Epitaxial Diamond Thin Film Nucleation and Growth Using Emission Electron Microscopy

DTIC Science & Technology

1993-12-01

diamond carbon on diamond Measurements of CVD diamond grown directly on Mo TEM specimen grids were made through a collaboration with the Fritz Haber ...Hawaii, May 1993. 2. --- , University of Illinois at Chicago, March 1993. 3. --- , Fritz Haber Institute, Berlin, June 1993. 3.0 Appendix: 8 1 Real...University, Athens OH 45701 -2979 *Permanent address: Fritz Haber Institute, Berlin, Germany. Thin (1Onm) carbon films are found to adhere to Chemical Vapor

∆ E /∆ E Measurements of Energetic Ions Using CVD Diamond Detectors

DOE PAGES

Alghamdi, Ahmed; Heilbronn, Lawrence; Castellanos, Luis A.; ...

2018-06-20

Experimental and computational results of a Δ E /Δ E diamond detection system are presented. The Δ E /Δ E detection system was evaluated using energetic proton and iron beams striking thick polyethylene targets at the NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory (BNL). The measured data for diamond sensor A show good agreement with the Geant4 simulation. In addition, simulations have demonstrated the ability to identify hydrogen isotopes using a diamond detection system.

∆ E /∆ E Measurements of Energetic Ions Using CVD Diamond Detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alghamdi, Ahmed; Heilbronn, Lawrence; Castellanos, Luis A.

Experimental and computational results of a Δ E /Δ E diamond detection system are presented. The Δ E /Δ E detection system was evaluated using energetic proton and iron beams striking thick polyethylene targets at the NASA Space Radiation Laboratory (NSRL) at Brookhaven National Laboratory (BNL). The measured data for diamond sensor A show good agreement with the Geant4 simulation. In addition, simulations have demonstrated the ability to identify hydrogen isotopes using a diamond detection system.

Diamond nanowires for highly sensitive matrix-free mass spectrometry analysis of small molecules.

PubMed

Coffinier, Yannick; Szunerits, Sabine; Drobecq, Hervé; Melnyk, Oleg; Boukherroub, Rabah

2012-01-07

This paper reports on the use of boron-doped diamond nanowires (BDD NWs) as an inorganic substrate for matrix-free laser desorption/ionization mass spectrometry (LDI-MS) analysis of small molecules. The diamond nanowires are prepared by reactive ion etching (RIE) with oxygen plasma of highly boron-doped (the boron level is 10(19) B cm(-3)) or undoped nanocrystalline diamond substrates. The resulting diamond nanowires are coated with a thin silicon oxide layer that confers a superhydrophilic character to the surface. To minimize droplet spreading, the nanowires were chemically functionalized with octadecyltrichlorosilane (OTS) and then UV/ozone treated to reach a final water contact angle of 120°. The sub-bandgap absorption under UV laser irradiation and the heat confinement inside the nanowires allowed desorption/ionization, most likely via a thermal mechanism, and mass spectrometry analysis of small molecules. A detection limit of 200 zeptomole for verapamil was demonstrated.

Nano-crystalline diamond-coated titanium dental implants - a histomorphometric study in adult domestic pigs.

PubMed

Metzler, Philipp; von Wilmowsky, Cornelius; Stadlinger, Bernd; Zemann, Wolfgang; Schlegel, Karl Andreas; Rosiwal, Stephan; Rupprecht, Stephan

2013-09-01

Promising biomaterial characteristics of diamond-coatings in biomedicine have been described in the literature. However, there is a lack of knowledge about implant osseointegration of this surface modification compared to the currently used sandblasted acid-etched Ti-Al6-V4 implants. The aim of this study was to investigate the osseointegration of microwave plasma-chemical-vapour deposition (MWP-CVD) diamond-coated Ti-Al6-V4 dental implants after healing periods of 2 and 5 months. Twenty-four MWP-CVD diamond-coated and 24 un-coated dental titanium-alloy implants (Ankylos(®)) were placed in the frontal skull of eight adult domestic pigs. To evaluate the effects of the nano-structured surfaces on bone formation, a histomorphometric analysis was performed after 2 and 5 months of implant healing. Histomorphometry analysed the bone-to-implant contact (BIC). No significant difference in BIC for the diamond-coated implants in comparison to reference implants could be observed for both healing periods. Scanning electron microscopy revealed an adequate interface between the bone and the diamond surface. No delamination or particle-dissociation due to shearing forces could be detected. In this study, diamond-coated dental titanium-alloy implants and sandblasted acid-etched implants showed a comparable degree of osseointegration. Copyright © 2012 European Association for Cranio-Maxillo-Facial Surgery. Published by Elsevier Ltd. All rights reserved.

Synthesis of sea urchin-like carbon nanotubes on nano-diamond powder.

PubMed

Hwang, E J; Lee, S K; Jeong, M G; Lee, Y B; Lim, D S

2012-07-01

Carbon nanotubes (CNTs) have unique atomic structure and properties, such as a high aspect ratio and high mechanical, electrical and thermal properties. On the other hand, the agglomeration and entanglement of CNTs restrict their applications. Sea urchin-like multiwalled carbon nanotubes, which have a small aspect ratio, can minimize the problem of dispersion. The high hardness, thermal conductivity and chemical inertness of the nano-diamond powder make it suitable for a wide range of applications in the mechanical and electronic fields. CNTs were synthesized on nano-diamond powder by thermal CVD to fabricate a filler with suitable mechanical properties and chemical stability. This paper reports the growth of CNTs with a sea urchin-like structure on the surface of the nano-diamond powder. Nano-diamond powders were dispersed in an attritional milling system using zirconia beads in ethanol. After the milling process, 3-aminopropyltrimethoxysilane (APS) was added as a linker. Silanization was performed between the nano-diamond particles and the metal catalyst. Iron chloride was used as a catalyst for the fabrication of the CNTs. After drying, catalyst-attached nano-diamond powders could be achieved. The growth of the carbon nanotubes was carried out by CVD. The CNT morphology was examined by scanning electron microscopy (SEM) and transmission electron microscopy (TEM). The mean diameter and length of the CNTs were 201 nm and 3.25 microm, respectively.

Growth of high quality AlN films on CVD diamond by RF reactive magnetron sputtering

NASA Astrophysics Data System (ADS)

Chen, Liang-xian; Liu, Hao; Liu, Sheng; Li, Cheng-ming; Wang, Yi-chao; An, Kang; Hua, Chen-yi; Liu, Jin-long; Wei, Jun-jun; Hei, Li-fu; Lv, Fan-xiu

2018-02-01

A highly oriented AlN layer has been successfully grown along the c-axis on a polycrystalline chemical vapor deposited (CVD) diamond by RF reactive magnetron sputtering. Structural, morphological and mechanical properties of the heterostructure were investigated by Scanning Electron Microscopy (SEM), Atomic Force Microscopy (AFM), Transmission Electron Microscopy (TEM), X-ray diffraction (XRD), Nano-indentation and Four-probe meter. A compact AlN film was demonstrated on the diamond layer, showing columnar grains and a low surface roughness of 1.4 nm. TEM results revealed a sharp AlN/diamond interface, which was characterized by the presence of a distinct 10 nm thick buffer layer resulting from the initial AlN growth stage. The FWHM of AlN (002) diffraction peak and its rocking curve are as low as 0.41° and 3.35° respectively, indicating a highly preferred orientation along the c-axis. AlN sputtered films deposited on glass substrates show a higher bulk resistivity (up to 3 × 1012 Ω cm), compared to AlN films deposited on diamond (∼1010 Ω cm). Finally, the film hardness and Young's modulus of AlN films on diamond are 25.8 GPa and 489.5 GPa, respectively.

Equilibrium, chemical kinetic, and transport limitations to diamond growth

NASA Astrophysics Data System (ADS)

Evans, Edward Anthony

Because of their extreme properties, diamond films have found some industrial applications, i.e., heat sinks and tool coatings. However, to increase their economic attractiveness, the growth rate must be increased, the deposition temperature must be lowered, and single crystal films must be achieved. We have studied two types of chemical vapor deposition systems, hot-filament and microwave assisted, in order to understand the factors limiting diamond growth rate. From simultaneous microbalance growth rate measurements and mass spectrometer measurements, changes in growth rate are correlated with changes in gas phase composition. Measured reaction orders support the proposal that diamond growth occurs through a single-carbon-atom species, e.g., CHsb3. When a two-carbon atom source gas is used, it is likely that the dissociation to two, single-carbon atom species occurs on the substrate surface (dissociative adsorption). Furthermore, a shift to zero-order suggests that the diamond growth is a surface-site limited process at higher hydrocarbon concentrations. The diamond growth rate maximum with pressure is explained by transport limitations of species within the reaction zone. The reported diamond growth rates in the hot-filament reactor are several times higher than those reported by other research groups. These higher growth rates result from surrounding the substrate with the filament. We have used the measured growth rates, filament temperatures, and thermocouple measurements to calculate activation energies for diamond growth. When the filament temperature is used for the calculation, an activation energy of 73 kcal per mole is obtained; however, based on estimated substrate temperatures, an activation energy of 18 kcal per mole is determined. A dimensional analysis approach was developed to select the most important gas phase reactions occurring during diamond CVD. Steady-state analysis of these reactions and the application of mass transport equations lead to the conclusion that diamond growth, in current hot-filament and microwave assisted CVD processes, is occurring in a partial equilibrium environment in which diffusion of atomic hydrogen controls the overall diamond growth rate. The initial stages of diamond growth on non-diamond substrates correspond to carburization, nucleation and growth. When polycrystalline or single crystal diamond is used as a substrate, the carburization and nucleation stages are not observed and growth begins immediately. The nucleation rate depends sensitively on the radiative heat transfer to the substrate. Adding ozone to the hot-filament CVD charge increases the production of carbon monoxide and carbon dioxide; this increase is observed with or without the filament being activated. A consistent effect on the diamond growth rate was not observed when ozone was added to the hot-filament reactor.

Osteoblastic cells trigger gate currents on nanocrystalline diamond transistor.

PubMed

Izak, Tibor; Krátká, Marie; Kromka, Alexander; Rezek, Bohuslav

2015-05-01

We show the influence of osteoblastic SAOS-2 cells on the transfer characteristics of nanocrystalline diamond solution-gated field-effect transistors (SGFET) prepared on glass substrates. Channels of these fully transparent SGFETs are realized by hydrogen termination of undoped diamond film. After cell cultivation, the transistors exhibit about 100× increased leakage currents (up to 10nA). During and after the cell delamination, the transistors return to original gate currents. We propose a mechanism where this triggering effect is attributed to ions released from adhered cells, which depends on the cell adhesion morphology, and could be used for cell culture monitoring. Copyright © 2015 Elsevier B.V. All rights reserved.

Effect of diamond-like carbon thin film coated acrylic resin on candida albicans biofilm formation.

PubMed

Queiroz, José Renato Cavalcanti; Fissmer, Sara Fernanda; Koga-Ito, Cristiane Yumi; Salvia, Ana C R D; Massi, Marcos; Sobrinho, Argermiro Soares da Silva; Júnior, Lafayette Nogueira

2013-08-01

The purpose of this study was to evaluate the effect of diamond-like carbon thin films doped and undoped with silver nanoparticles coating poly(methyl methacrylate) (PMMA) on Candida albicans biofilm formation. The control of biofilm formation is important to prevent oral diseases in denture users. Forty-five PMMA disks were obtained, finished, cleaned in an ultrasonic bath, and divided into three groups: Gc, no surface coating (control group); Gdlc, coated with diamond-like carbon film; and Gag, coated with diamond-like carbon film doped with silver nanoparticles. The films were deposited using a reactive magnetron sputtering system (physical vapor deposition process). The specimens were characterized by optical profilometry, atomic force microscopy, and Rutherford backscattering spectroscopy analyses that determined differences in chemical composition and morphological structure. Following sterilization of the specimens by γ-ray irradiation, C. albicans (ATCC 18804) biofilms were formed by immersion in 2 ml of Sabouraud dextrose broth inoculated with a standardized fungal suspension. After 24 hours, the number of colony forming units (cfu) per specimen was counted. Data concerning biofilm formation were analyzed using ANOVA and the Tukey test (p < 0.05). C. albicans biofilm formation was significantly influenced by the films (p < 0.00001), reducing the number of cfu, while not affecting the roughness parameters (p > 0.05). The Tukey test showed no significant difference between Gdlc and Gag. Films deposited were extremely thin (∼50 nm). The silver particles presented a diameter between 60 and 120 nm and regular distribution throughout the film surface (to Gag). Diamond-like carbon films, doped or undoped with silver nanoparticles, coating the base of PMMA-based dentures could be an alternative procedure for preventing candidosis in denture users. © 2013 by the American College of Prosthodontists.

Lasers in Synthesis, Characterization and Processing of Diamond, International Center, Tashkent, Uzbekistan, 6-9 October 1997

DTIC Science & Technology

1997-01-01

Chemistry Division, Code 6174 Materiaux Leninsky prospekt, 53 Gas/Surface Dinamics Section et des Hautes Pressions Moscow 117924, Russia Washington, D.C...reactor for diamond CVD. Strengths and limitations of this and the various alternative H atom detection methods will be summarised, before

Single crystal CVD diamond membranes as Position Sensitive X-ray Detector

NASA Astrophysics Data System (ADS)

Desjardins, K.; Menneglier, C.; Pomorski, M.

2017-12-01

Transparent X-ray Beam Position Monitor (XBPM) has been specifically developed for low energy X-ray beamlines (1.4 keV < E < 5 keV) allowing to transmit more than 80% of 2 keV energy beam. The detector is based on a free-standing single crystal CVD diamond membrane of 4 μm thickness with position-sensitive DLC (Diamond-Like Carbon) resistive electrodes in duo-lateral configuration. The measured X-ray beam induced current (XBIC) due to the interaction of X-rays with diamond membrane allows precise monitoring of the absolute beam flux and the beam position (by the reconstruction of its center-of-gravity) at beam transmissions reaching 95%. This detector has been installed at SOLEIL synchrotron on the SIRIUS beamline monochromator output and it has shown charge collection efficiency (CCE) reaching 100% with no lag-effects and excellent beam intensity sensitivity monitoring. X-ray beam mapping of the detector showed an XBIC response inhomogeneity of less than 10% across the membrane, corresponding mainly to the measured variation of the diamond plate thickness. The measured beam position resolution is at sub-micron level depending on the beam flux and the readout electronics bandwidth.

A Comparative Study of Three Different Chemical Vapor Deposition (CVD) Techniques of Carbon Nanotube Growth on Diamond Films

DTIC Science & Technology

2013-01-01

FCT-CVD) with xylene and ferrocene liquid mixture without any prior catalyst deposition. T-CVD is a low cost system that can easily be set up to grow...iron catalysts, respectively. For the FCT-CVD approach, ferrocene is used as an iron source to promote CNT growth. Based on these repeatable results...kept at 250 ° C while the high temperature furnace is ramped up to the growth temperature of 750 ° C. Ferrocene was dissolved into xylene solvent in

Interlayer utilization (including metal borides) for subsequent deposition of NSD films via microwave plasma CVD on 316 and 440C stainless steels

NASA Astrophysics Data System (ADS)

Ballinger, Jared

Diamond thin films have promising applications in numerous fields due to the extreme properties of diamonds in conjunction with the surface enhancement of thin films. Biomedical applications are numerous including temporary implants and various dental and surgical instruments. The unique combination of properties offered by nanostructured diamond films that make it such an attractive surface coating include extreme hardness, low obtainable surface roughness, excellent thermal conductivity, and chemical inertness. Regrettably, numerous problems exist when attempting to coat stainless steel with diamond generating a readily delaminated film: outward diffusion of iron to the surface, inward diffusion of carbon limiting necessary surface carbon precursor, and the mismatch between the coefficients of thermal expansion yielding substantial residual stress. While some exotic methods have been attempted to overcome these hindrances, the most common approach is the use of an intermediate layer between the stainless steel substrate and the diamond thin film. In this research, both 316 stainless steel disks and 440C stainless steel ball bearings were tested with interlayers including discrete coatings and graded, diffusion-based surface enhancements. Titanium nitride and thermochemical diffusion boride interlayers were both examined for their effectiveness at allowing for the growth of continuous and adherent diamond films. Titanium nitride interlayers were deposited by cathodic arc vacuum deposition on 440C bearings. Lower temperature diamond processing resulted in improved surface coverage after cooling, but ultimately, both continuity and adhesion of the nanostructured diamond films were unacceptable. The ability to grow quality diamond films on TiN interlayers is in agreement with previous work on iron and low alloy steel substrates, and the similarly seen inadequate adhesion strength is partially a consequence of the lacking establishment of an interfacial carbide phase. Surface boriding was implemented using the novel method of microwave plasma CVD with a mixture of hydrogen and diborane gases. On 440C bearings, dual phase boride layers of Fe2B and FeB were formed which supported adhered nanostructured diamond films. Continuity of the films was not seamless with limited regions remaining uncoated potentially corresponding to delamination of the film as evidenced by the presence of tubular structures presumably composed of sp2 bonded carbon. Surface boriding of 316 stainless steel discs was conducted at various powers and pressures to achieve temperatures ranging from 550-800 °C. The substrate boriding temperature was found to substantially influence the resultant interlayer by altering the metal boride(s) present. The lowest temperatures produced an interlayer where CrB was the single detected phase, higher temperatures yielded the presence of only Fe2B, and a combination of the two phases resulted from an intermediate boriding temperature. Compared with the more common, commercialized boriding methods, this a profound result given the problems posed by the FeB phase in addition to other advantages offered by CVD processes and microwave generated plasmas in general. Indentation testing of the boride layers revealed excellent adhesion strength for all borided interlayers, and above all, no evidence of cracking was observed for a sole Fe2B phase. As with boriding of 440C bearings, subsequent diamond deposition was achieved on these interlayers with substantially improved adhesion strength relative to diamond coated TiN interlayers. Both XRD and Raman spectroscopy confirmed a nanostructured diamond film with interfacial chromium carbides responsible for enhanced adhesion strength. Interlayers consisting solely of Fe2B have displayed an ability to support fully continuous nanostructured diamond films, yet additional study is required for consistent reproduction. This is in good agreement with initial work on pack borided high alloy steels to promote diamond film surface modification. The future direction for continued research of nanostructured diamond coatings on microwave plasma CVD borided stainless steel should further investigate the adhesion of both borided interlayers and subsequent NSD films in addition to short, interrupted diamond depositions to study the interlayer/diamond film interface.

Properties of a commercial PTW-60019 synthetic diamond detector for the dosimetry of small radiotherapy beams.

PubMed

Lárraga-Gutiérrez, José Manuel; Ballesteros-Zebadúa, Paola; Rodríguez-Ponce, Miguel; García-Garduño, Olivia Amanda; de la Cruz, Olga Olinca Galván

2015-01-21

A CVD based radiation detector has recently become commercially available from the manufacturer PTW-Freiburg (Germany). This detector has a sensitive volume of 0.004 mm(3), a nominal sensitivity of 1 nC Gy(-1) and operates at 0 V. Unlike natural diamond based detectors, the CVD diamond detector reports a low dose rate dependence. The dosimetric properties investigated in this work were dose rate, angular dependence and detector sensitivity and linearity. Also, percentage depth dose, off-axis dose profiles and total scatter ratios were measured and compared against equivalent measurements performed with a stereotactic diode. A Monte Carlo simulation was carried out to estimate the CVD small beam correction factors for a 6 MV photon beam. The small beam correction factors were compared with those obtained from stereotactic diode and ionization chambers in the same irradiation conditions The experimental measurements were performed in 6 and 15 MV photon beams with the following square field sizes: 10 × 10, 5 × 5, 4 × 4, 3 × 3, 2 × 2, 1.5 × 1.5, 1 × 1 and 0.5 × 0.5 cm. The CVD detector showed an excellent signal stability (<0.2%) and linearity, negligible dose rate dependence (<0.2%) and lower response angular dependence. The percentage depth dose and off-axis dose profiles measurements were comparable (within 1%) to the measurements performed with ionization chamber and diode in both conventional and small radiotherapy beams. For the 0.5 × 0.5 cm, the measurements performed with the CVD detector showed a partial volume effect for all the dosimetric quantities measured. The Monte Carlo simulation showed that the small beam correction factors were close to unity (within 1.0%) for field sizes ≥1 cm. The synthetic diamond detector had high linearity, low angular and negligible dose rate dependence, and its response was energy independent within 1% for field sizes from 1.0 to 5.0 cm. This work provides new data showing the performance of the CVD detector compared against a high spatial resolution diode. It also presents a comparison of the CVD small beam correction factors with those of diode and ionization chamber for a 6 MV photon beam.

Measurement of the secondary electron emission from CVD diamond films using phosphor screen detectors

NASA Astrophysics Data System (ADS)

Vaz, R.; May, P. W.; Fox, N. A.; Harwood, C. J.; Chatterjee, V.; Smith, J. A.; Horsfield, C. J.; Lapington, J. S.; Osbourne, S.

2015-03-01

Diamond-based photomultipliers have the potential to provide a significant improvement over existing devices due to diamond's high secondary electron yield and narrow energy distribution of secondary electrons which improves energy resolution creating extremely fast response times. In this paper we describe an experimental apparatus designed to study secondary electron emission from diamond membranes only 400 nm thick, observed in reflection and transmission configurations. The setup consists of a system of calibrated P22 green phosphor screens acting as radiation converters which are used in combination with photomultiplier tubes to acquire secondary emission yield data from the diamond samples. The superior signal voltage sampling of the phosphor screen setup compared with traditional Faraday Cup detection allows the variation in the secondary electron yield across the sample to be visualised, allowing spatial distributions to be obtained. Preliminary reflection and transmission yield data are presented as a function of primary electron energy for selected CVD diamond films and membranes. Reflection data were also obtained from the same sample set using a Faraday Cup detector setup. In general, the curves for secondary electron yield versus primary energy for both measurement setups were comparable. On average a 15-20% lower signal was recorded on our setup compared to the Faraday Cup, which was attributed to the lower photoluminescent efficiency of the P22 phosphor screens when operated at sub-kilovolt bias voltages.

Ionization signals from diamond detectors in fast-neutron fields

NASA Astrophysics Data System (ADS)

Weiss, C.; Frais-Kölbl, H.; Griesmayer, E.; Kavrigin, P.

2016-09-01

In this paper we introduce a novel analysis technique for measurements with single-crystal chemical vapor deposition (sCVD) diamond detectors in fast-neutron fields. This method exploits the unique electronic property of sCVD diamond sensors that the signal shape of the detector current is directly proportional to the initial ionization profile. In fast-neutron fields the diamond sensor acts simultaneously as target and sensor. The interaction of neutrons with the stable isotopes 12 C and 13 C is of interest for fast-neutron diagnostics. The measured signal shapes of detector current pulses are used to identify individual types of interactions in the diamond with the goal to select neutron-induced reactions in the diamond and to suppress neutron-induced background reactions as well as γ-background. The method is verified with experimental data from a measurement in a 14.3 MeV neutron beam at JRC-IRMM, Geel/Belgium, where the 13C(n, α)10Be reaction was successfully extracted from the dominating background of recoil protons and γ-rays and the energy resolution of the 12C(n, α)9Be reaction was substantially improved. The presented analysis technique is especially relevant for diagnostics in harsh radiation environments, like fission and fusion reactors. It allows to extract the neutron spectrum from the background, and is particularly applicable to neutron flux monitoring and neutron spectroscopy.

Ultrathin Nanocrystalline Diamond Films with Silicon Vacancy Color Centers via Seeding by 2 nm Detonation Nanodiamonds.

PubMed

Stehlik, Stepan; Varga, Marian; Stenclova, Pavla; Ondic, Lukas; Ledinsky, Martin; Pangrac, Jiri; Vanek, Ondrej; Lipov, Jan; Kromka, Alexander; Rezek, Bohuslav

2017-11-08

Color centers in diamonds have shown excellent potential for applications in quantum information processing, photonics, and biology. Here we report chemical vapor deposition (CVD) growth of nanocrystalline diamond (NCD) films as thin as 5-6 nm with photoluminescence (PL) from silicon-vacancy (SiV) centers at 739 nm. Instead of conventional 4-6 nm detonation nanodiamonds (DNDs), we prepared and employed hydrogenated 2 nm DNDs (zeta potential = +36 mV) to form extremely dense (∼1.3 × 10 13 cm -2 ), thin (2 ± 1 nm), and smooth (RMS roughness < 0.8 nm) nucleation layers on an Si/SiO x substrate, which enabled the CVD growth of such ultrathin NCD films in two different and complementary microwave (MW) CVD systems: (i) focused MW plasma with an ellipsoidal cavity resonator and (ii) pulsed MW plasma with a linear antenna arrangement. Analytical ultracentrifuge, infrared and Raman spectroscopies, atomic force microscopy, and scanning electron microscopy are used for detailed characterization of the 2 nm H-DNDs and the nucleation layer as well as the ultrathin NCD films. We also demonstrate on/off switching of the SiV center PL in the NCD films thinner than 10 nm, which is achieved by changing their surface chemistry.

Micro-Raman Analysis of Irradiated Diamond Films

NASA Technical Reports Server (NTRS)

Newton, R. L.; Munafo, Paul M. (Technical Monitor)

2002-01-01

Owing to its unique and robust physical properties, diamond is a much sought after material for use in advanced technologies such as Microelectromechanical Systems (MEMS). The volume and weight savings promised by MEMS-based devices are of particular interest to spaceflight applications. However, much basic materials science research remains to be completed in this field. Results of micro-Raman analysis of proton (1015 - 1017 H+/cm2 doses) irradiated chemical vapor deposited (CVD) diamond reveals that the microstructure is retained even after high radiation exposure.

Efficient generation of nanoscale arrays of nitrogen-vacancy centers with long coherence time in diamond

NASA Astrophysics Data System (ADS)

Feng, Fupan; Wang, Junfeng; Zhang, Wenlong; Zhang, Jian; Lou, Liren; Zhu, Wei; Wang, Guanzhong

2016-11-01

Utilizing PMMA mask, nanoscale arrays of nitrogen-vacancy (NV) centers in diamond have been fabricated by ion beam implantation (IBM). Long coherence time of the spin of NV centers, comparable with that of the native NV centers in CVD grown diamond, has been achieved by high-temperature annealing. With dynamic decoupling technology, coherence time was extended to 1.4 millisecond, which enable an ac magnetic field detection with a sensitivity of 80 nT\\cdot Hz^{-1/2}.

Multi-Energy Processing for Novel Coating Technologies

DTIC Science & Technology

2014-12-18

tungsten carbide (WC) substrate (BS-6S, Basic Carbide Corp.) with a dimension of 25.4 x 25.4 x 1.6 mm^ and a cobalt composition of 6% was placed on a...as dopant sources. (a) No NH3 + No laser (b) NH3 added, No laser (c) 10.591 ^m Figure 4.4 SEM micrographs of the diamond films deposited using...typed 37 diamond. Nitrogen was widely used as n-typed dopant . Nitrogen-containing additives in CVD diamond growth led to severe deterioration of the

Temperature dependence of W metallic coatings synthesized by double glow plasma surface alloying technology on CVD diamond films

NASA Astrophysics Data System (ADS)

Gao, Jie; Hei, Hongjun; Shen, Yanyan; Liu, Xiaoping; Tang, Bin; He, Zhiyong; Yu, Shengwang

2015-11-01

W metallic coatings were synthesized on free-standing chemical vapor deposition (CVD) diamond films using double glow plasma surface alloying (DGPSA) technology. The influence of varying metalizing temperatures on the microstructures, phase composition and adhesion of the W metallic coatings were investigated. Likewise, the effectiveness of the W metallic coatings was preliminary evaluated via examining the shear strength of the brazing joints between W-metalized diamond films and commercial cemented carbide (WC-Co) inserts. The results showed that continuous and compact W metallic coatings were formed on the diamond films in the temperature range of 750-800 °C, while cracks or cavities presented at the W/diamond interface at 700 °C, 850 °C and 900 °C. Inter-diffusion of W and C atoms preformed, and WC and W2C were formed at the W/diamond interfaces at all temperatures except 700 °C, at which only W2C was formed. Moreover, etched cavities appeared at the W/diamond interface when the temperature exceeded 850 °C. The critical loads for coating delamination, as measured with the scratch test, increased as the temperature rose from 700 °C to 800 °C, while decreased with further increasing temperature. The maximum load was obtained at 800 °C with a value of 17.1 N. Besides, the shear strength of the brazing joints depicted the similar trend with the critical load. The highest shear strength (249 MPa) was also obtained at 800 °C.

Ti:Pt:Au:Ni thin-film CVD diamond sensor ability for charged particle detection.

PubMed

Kasiwattanawut, Haruetai; Tchouaso, Modeste Tchakoua; Prelas, Mark A

2018-05-22

This work demonstrates the development of diamond sensors with reliable contacts using a new metallization formula, which can operate under high-pressure gas environment. The metallization was created using thin film layers of titanium, platinum, gold and nickel deposited on a single crystal electronic grade CVD diamond chip. The contacts were 2 mm in diameter with thickness of 50/5/20/150 nm of Ti:Pt:Au:Ni. The optimum operating voltage of the sensor was determined from the current-voltage measurements. The sensor was calibrated with 239 Pu and 241 Am alpha radiation sources at 300 V. The energy resolution of the Ti:Pt:Au:Ni diamond sensor was determined to be 7.6% at 5.2 MeV of 239 Pu and 2.2% at 5.48 MeV of 241 Am. The high-pressure gas loading environment under which this sensor was used is discussed. Specifically, experimental observations are described using hydrogen loading of nickel as a means of initiating low energy nuclear reactions. No neutrons, electrons, ions or other ionizing radiations were observed in these experiments. Copyright © 2018 Elsevier Ltd. All rights reserved.

Channeling effect in polycrystalline deuterium-saturated CVD diamond target bombarded by deuterium ion beam

NASA Astrophysics Data System (ADS)

Bagulya, A. V.; Dalkarov, O. D.; Negodaev, M. A.; Rusetskii, A. S.; Chubenko, A. P.; Ralchenko, V. G.; Bolshakov, A. P.

2015-07-01

At the ion accelerator HELIS at LPI, the neutron yield is investigated in DD reactions within a strongly textured polycrystalline deuterium-saturated CVD diamond under irradiation by a deuterium ion beam with the energy of less than 30 keV. The measurements of the neutron flux in the beam direction are performed using a multichannel detector based on 3He counters, in dependence on the target angle, β, with respect to the beam axis. A significant anisotropy in the neutron yield is observed. At β = 0° the yield is higher by a factor of 3 as compared to that at β = ±45°. The possible reasons for the anisotropy, including ion channeling, are discussed.

Carbon-Based Wear Coatings: Properties and Applications

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

2003-01-01

The technical function of numerous engineering systems - such as vehicles, machines, and instruments - depends on the processes of motion and on the surface systems. Many processes in nature and technology depend on the motion and dynamic behavior of solids, liquids, and gases. Smart surface systems are essential because of the recent technological push toward higher speeds, loads, and operating temperatures; longer life; lighter weight and smaller size (including nanotechnology); and harsh environments in mechanical, mechatronic, and biomechanical systems. If proper attention is not given to surface systems, then vehicles, machines, instruments, and other technical systems could have short lives, consume excessive energy, experience breakdowns, result in liabilities, and fail to accomplish their missions. Surface systems strongly affect our national economy and our lifestyles. At the NASA Glenn Research Center, we believe that proper attention to surface systems, especially in education, research, and application, could lead to economic savings of between 1.3 and 1.6 percent of the gross domestic product. Wear coatings and surface systems continue to experience rapid growth as new coating and surface engineering technologies are discovered, more cost-effective coating and surface engineering solutions are developed, and marketers aggressively pursue, uncover, and exploit new applications for engineered surface systems in cutting tools and wear components. Wear coatings and smart surface systems have been used widely in industrial, consumer, automotive, aerospace, and biomedical applications. This presentation expresses the author's views of and insights into smart surface systems in wear coatings. A revolution is taking place in carbon science and technology. Diamond, an allotrope of carbon, joins graphite, fullerenes, and nanotubes as its major pure carbon structures. It has a unique combination of extreme properties: hardness and abrasion resistance; adhesion and friction; thermal conductivity; chemical and thermal inertness; corrosion and wear resistance; radiation resistance and biocompatibility; electronic, acoustic, and electrochemical characteristics; and environmental compatibility. These properties make diamond attractive for a wide range of diverse applications. In particular, chemical-vapor-deposited (CVD) diamond coatings offer a broad potential, since size and cost are not as limiting. The production of large, superhard diamond films or sheets at low cost make designer materials possible. This presentation is divided into two sections: properties and applications of hard coatings. The first section is concerned with the fundamental properties of the surfaces of CVD diamonds and related materials. The surface properties of hard coatings with favorable coefficients of friction (less than or equal to 0.1) and dimensional wear coefficients (less than or equal to 10(exp -6) cubic millimeters/N.m) in specific environments are discussed. The second section is devoted to applications. Examples of actual, successful applications and of potential challenging applications of the coatings.such as CVD diamond, diamondlike carbon, and cubic boron nitride-are described. Cutting tools coated with CVD diamond are of immediate commercial interest. Other applications, such as microelectromechanical systems (MEMS), valves, and bearings of CVD diamond, are being developed, but at a slow pace. There is a continually growing interest in commercializing diamondlike carbon for wear parts applications, such as biomedical parts and implants, forming dies, transport guides, magnetic tapes and disks, valves, and gears. Cubic boron nitride films are receiving attention because they can be used on tools to machine ferrous materials or on wear parts in sliding contact with ferrous materials.

Nitrogen doping, optical characterization, and electron emission study of diamond

NASA Astrophysics Data System (ADS)

Park, Minseo

Nitrogen-doped chemical vapor deposited (CVD) diamond films were synthesized with N2 (nitrogen) and C3H6N6 (melamine) as doping sources. More effective substitutional nitrogen doping was achieved with C3H6N6 than with N 2. Since a melamine molecule has an existing cyclic C-N bonded ring, it is expected that the incorporation of nitrogen on substitution diamond lattice should be facilitated. The diamond film doped with N2 contained a significant amount of non-diamond carbon phases. The samples were analyzed by scanning electron microscopy, Raman scattering, photoluminescence spectroscopy, and field emission measurements. The sample produced using N 2 exhibited a lower field emission turn-on field than the sample produced using C3H6N6. It is believed that the presence of the graphitic phases (or amorphous sp2 carbon) at the grain boundaries of the diamond and/or the nanocrystallinity (or microcrystallinity) of the diamond play a significant role in lowering the turn-on field of the film produced using N2. The nature of the nitrogen-related 1190 cm-1 Raman peak was investigated. Nitrogen is incorporated predominantly to the crystalline or amorphous sp2 phases when nitrogen is added to the growing diamond. Field emission characteristics from metallic field emitter coated with type Ia and Ib diamond powders were also investigated. No significant difference in electron emission characteristics were found in these samples. Voltage-dependent field emission energy distribution (V-FEED) measurement was performed to analyze the energy distribution of the emitted electrons. It is believed that substitutional nitrogen doping plays only a minor role in changing field emission characteristics in diamond. Discontinuous diamond films were deposited on silicon using a microwave plasma chemical vapor deposition (MPCVD) system. The diamond deposits were sharpened by argon ion beam etching. Raman spectroscopy was carried out to study the structural change of the diamond after ion beam bombardment. Field emission measurements were performed in-situ with an electron beam induced current (EBIC) probe inside the chamber of the scanning electron microscope. It was found that amorphous sp2 carbon is produced as the diamond is sputtered by the Ar ion beam. The field emission turn-on field was also significantly lowered after sharpening, which, it is speculated, is caused by field enhancement due to a change in geometry and/or structural changes (such as amorphization of crystalline diamond into graphitic or amorphous sp2 carbon) by Ar ion irradiation. Secondary electron emission patterning of single crystal diamond surfaces with hydrogen and oxygen plasma treatments was demonstrated. Hydrogen plasma treated regions were much brighter than the oxygen terminated regions. Results of atomic force microscopy confirmed that the observed contrast is not topographical. Several other possible negative electron affinity (or low positive electron affinity) materials such as chemical vapor deposited (CVD) diamond, aluminum nitride and tetrahedrally bonded amorphous carbon [tx a-C 1-x] were also investigated. Faint image contrast (patterning) was also observed from polycrystalline CVD diamond, single crystal aluminum nitride films, and polycrystalline aluminum nitride films; however, no contrast at all was obtained from tetrahedrally bonded amorphous carbon [tx a-C1-x] films.

Alpha-Voltaic Sources Using Diamond as Conversion Medium

NASA Technical Reports Server (NTRS)

Patel, Jagadish U.; Fleurial, Jean-Pierre; Kolawa, Elizabeth

2006-01-01

A family of proposed miniature sources of power would exploit the direct conversion of the kinetic energy of a particles into electricity in diamond semiconductor diodes. These power sources would function over a wide range of temperatures encountered in terrestrial and outer-space environments. These sources are expected to have operational lifetimes of 10 to 20 years and energy conversion efficiencies >35 percent. A power source according to the proposal would include a pair of devices like that shown in the figure. Each device would contain Schottky and p/n diode devices made from high-band-gap, radiation-hard diamond substrates. The n and p layers in the diode portion would be doped sparsely (<1014 cm-3) in order to maximize the volume of the depletion region and thereby maximize efficiency. The diode layers would be supported by an undoped diamond substrate. The source of a particles would be a thin film of 244Cm (half-life 18 years) sandwiched between the two paired devices. The sandwich arrangement would force almost every a particle to go through the active volume of at least one of the devices. Typical a particle track lengths in the devices would range from 20 to 30 microns. The a particles would be made to stop only in the undoped substrates to prevent damage to the crystalline structures of the diode portions. The overall dimensions of a typical source are expected to be about 2 by 2 by 1 mm. Assuming an initial 244Cm mass of 20 mg, the estimated initial output of the source is 20 mW (a current of 20 mA at a potential of 1 V).

The electrical properties of low pressure chemical vapor deposition Ga doped ZnO thin films depending on chemical bonding configuration

NASA Astrophysics Data System (ADS)

Jung, Hanearl; Kim, Doyoung; Kim, Hyungjun

2014-04-01

The electrical and chemical properties of low pressure chemical vapor deposition (LP-CVD) Ga doped ZnO (ZnO:Ga) films were systematically investigated using Hall measurement and X-ray photoemission spectroscopy (XPS). Diethylzinc (DEZ) and O2 gas were used as precursor and reactant gas, respectively, and trimethyl gallium (TMGa) was used as a Ga doping source. Initially, the electrical properties of undoped LP-CVD ZnO films depending on the partial pressure of DEZ and O2 ratio were investigated using X-ray diffraction (XRD) by changing partial pressure of DEZ from 40 to 140 mTorr and that of O2 from 40 to 80 mTorr. The resistivity was reduced by Ga doping from 7.24 × 10-3 Ω cm for undoped ZnO to 2.05 × 10-3 Ω cm for Ga doped ZnO at the TMG pressure of 8 mTorr. The change of electric properties of Ga doped ZnO with varying the amount of Ga dopants was systematically discussed based on the structural crystallinity and chemical bonding configuration, analyzed by XRD and XPS, respectively.

A Comparative Study of Three Different Chemical Vapor Deposition Techniques of Carbon Nanotube Growth on Diamond Films

DTIC Science & Technology

2013-01-01

catalyst thermal CVD (FCT-CVD) with xylene and ferrocene liquid mixture without any prior catalyst deposition. T-CVD is a low-cost system that can... ferrocene is used as an iron source to promoteCNT growth. Based on these repeatable results, the CNT growth parameters were used to grow CNTs on the...temperature furnace is ramped up to the growth temperature of 750∘C. Ferrocene was dissolved into a xylene solvent in a 0.008 : 1molar volume ratio.The xylene

Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces.

PubMed

Yoshikawa, Taro; Reusch, Markus; Zuerbig, Verena; Cimalla, Volker; Lee, Kee-Han; Kurzyp, Magdalena; Arnault, Jean-Charles; Nebel, Christoph E; Ambacher, Oliver; Lebedev, Vadim

2016-11-17

Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar) c -axis oriented sputtered aluminum nitride (AlN) film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions.

Friction and Wear Properties of As-Deposited and Carbon Ion-Implanted Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1996-01-01

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 keV ion energy, resulting in a dose of 1.2 x 10(exp 17) carbon ions per cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, X-ray photoelectron spectroscopy, and X-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40% relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and wear properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to lO(exp -8) mm(exp 3) N(exp -1) m(exp -1)) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4) mm(exp 7) N(exp -1) m(exp -1)) in ultrahigh vacuum. The carbon ion implantation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, non-diamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7) mm(exp 3) N(exp -1) m(exp-1)). Even in ultrahigh vacuum, the presence of the non-diamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6) mm(exp 3) N(exp -1) m(exp -1). Thus, the carbon ion-implanted, fine-grain diamond films can be effectively used as wear-resistant, self-lubricating coatings not only in air and dry nitrogen, but also in ultrahigh vacuum.

Microcontact printing of monodiamond nanoparticles: an effective route to patterned diamond structure fabrication.

PubMed

Zhuang, Hao; Song, Bo; Staedler, Thorsten; Jiang, Xin

2011-10-04

By combining microcontact printing with a nanodiamond seeding technique, a precise micrometer-sized chemical vapor deposition (CVD) diamond pattern have been obtained. On the basis of the guidance of basic theoretical calculations, monodisperse detonation nanodiamonds (DNDs) were chosen as an "ink" material and oxidized poly(dimethylsiloxane) (PDMS) was selected to serve as a stamp because it features a higher interaction energy with the DNDs compared to that of the original PDMS. The adsorption kinetics shows an approximately exponential law with a maximum surface DND density of 3.4 × 10(10) cm(-2) after 20 min. To achieve a high transfer ratio of DNDs from the PDMS stamp to a silicon surface, a thin layer of poly(methyl methacrylate) (PMMA) was spin coated onto the substrates. A microwave plasma chemical vapor deposition system was used to synthesize the CVD diamond on the seeded substrate areas. Precise diamond patterns with a low expansion ratio (3.6%) were successfully prepared after 1.5 h of deposition. Further increases in the deposition time typically lead to a high expansion rate (∼0.8 μm/h). The general pattern shape, however, did not show any significant change. Compared with conventional diamond pattern deposition methods, the technique described here offers the advantages of being simple, inexpensive, damage-free, and highly compatible, rendering it attractive for a broad variety of industrial applications. © 2011 American Chemical Society

Nanodiamonds: The ways forward

NASA Astrophysics Data System (ADS)

Tamburri, Emanuela; Orlanducci, Silvia; Reina, Giacomo; Lavecchia, Teresa; Angjellari, Mariglen; Rossi, Marco; Terranova, Maria Letizia

2015-06-01

We present here a short overview of the main classes of methods used to generate diamond nanostructures. The described methodologies, namely the CVD techniques, the explosive reactions, the laser-induced processes and the plasma treatments, offer the feasibility to produce nanosized diamonds in forms of powders or films, to modulate size, shape and structure of individual nanograins or of nanodiamond aggregates, to build complex architectures. A proper design and a subsequent controlled production of diamond structures at the nanoscale are strict requirements for the transition from fundamental material research to real-world applications.

Nano-inclusions in diamond: Evidence of diamond genesis

NASA Astrophysics Data System (ADS)

Wirth, R.

2015-12-01

The use of Focused Ion Beam technology (FIB) for TEM sample preparation introduced approximately 15 years ago revolutionized the application of TEM in Geosciences. For the first time, FIB enabled cutting samples for TEM use from exactly the location we are interested in. Applied to diamond investigation, this technique revealed the presence of nanometre-sized inclusions in diamond that have been simply unknown before. Nanoinclusions in diamond from different location and origin such as diamonds from the Lower and Upper Mantle, metamorphic diamonds (Kazakhstan, Erzgebirge, Bohemia), diamonds from ophiolites (Tibet, Mongolia, Xinjiang, Ural Mountains), diamonds from igneous rocks (Hawaii, Kamchatka) and impact diamonds (Popigai Crater, Siberia) have been investigated during the last 15 years. The major conclusion of all these TEM studies is, that the nanoinclusions, their phases and phase composition together with the micro- and nanostructure evidence the origin of diamond and genesis of diamond. We can discriminate Five different mechanisms of diamond genesis in nature are observed: Diamond crystallized from a high-density fluid (Upper mantle and metamorphic diamond). Diamond crystallized from carbonatitic melt (Lower mantle diamond). Diamond precipitates from a metal alloy melt (Diamond from ophiolites). Diamond crystallized by gas phase condensation or chemical vapour condensation (CVD) (Lavas from Kamchatka, xenoliths in Hawaiian lavas). Direct transformation of graphite into diamond.

Field electron emission from diamond and related films synthesized by plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lu, Xianfeng

The focus of this thesis is the study of the field electron emission (FEE) of diamond and related films synthesized by plasma enhanced chemical vapor deposition. The diamond and related films with different morphologies and compositions were prepared in a microwave plasma-enhanced chemical vapor deposition (CVD) reactor and a hot filament CVD reactor. Various analytical techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy were employed to characterize the surface morphology and chemical composition. The influence of surface morphology on the field electron emission property of diamond films was studied. The emission current of well-oriented microcrystalline diamond films is relatively small compared to that of randomly oriented microcrystalline diamond films. Meanwhile, the nanocrystalline diamond film has demonstrated a larger emission current than microcrystalline diamond films. The nanocone structure significantly improves the electron emission current of diamond films due to its strong field enhancement effect. The sp2 phase concentration also has significant influence on the field electron emission property of diamond films. For the diamond films synthesized by gas mixture of hydrogen and methane, their field electron emission properties were enhanced with the increase of methane concentration. The field electron emission enhancement was attributed to the increase of sp2 phase concentration, which increases the electrical conductivity of diamond films. For the diamond films synthesized through graphite etching, the growth rate and nucleation density of diamond films increase significantly with decreasing hydrogen flow rate. The field electron emission properties of the diamond films were also enhanced with the decrease of hydrogen flow rate. The field electron emission enhancement can be also attributed to the increase of the sp 2 phase concentration. In addition, the deviation of the experimental Fowler-Nordheim (F-N) plot from a straight line was observed for graphitic nanocone films. The deviation can be mainly attributed to the nonuniform field enhancement factor of the graphitic nanocones. In low macroscopic electric field regions, electrons are emitted mainly from nanocone or nanocones with the largest field enhancement factor, which corresponds to the smallest slope magnitude. With the increase of electric field, nanocones with small field enhancement factors also contribute to the emission current, which results in a reduced average field enhancement factor and therefore a large slope magnitude.

Adhesive bonding and brazing of nanocrystalline diamond foil onto different substrate materials

NASA Astrophysics Data System (ADS)

Lodes, Matthias A.; Sailer, Stefan; Rosiwal, Stefan M.; Singer, Robert F.

2013-10-01

Diamond coatings are used in heavily stressed industrial applications to reduce friction and wear. Hot-filament chemical vapour deposition (HFCVD) is the favourable coating method, as it allows a coating of large surface areas with high homogeneity. Due to the high temperatures occurring in this CVD-process, the selection of substrate materials is limited. With the desire to coat light materials, steels and polymers a new approach has been developed. First, by using temperature-stable templates in the HFCVD and stripping off the diamond layer afterwards, a flexible, up to 150 μm thick and free standing nanocrystalline diamond foil (NCDF) can be produced. Afterwards, these NCDF can be applied on technical components through bonding and brazing, allowing any material as substrate. This two-step process offers the possibility to join a diamond layer on any desired surface. With a modified scratch test and Rockwell indentation testing the adhesion strength of NCDF on aluminium and steel is analysed. The results show that sufficient adhesion strength is reached both on steel and aluminium. The thermal stress in the substrates is very low and if failure occurs, cracks grow undercritically. Adhesion strength is even higher for the brazed samples, but here crack growth is critical, delaminating the diamond layer to some extent. In comparison to a sample directly coated with diamond, using a high-temperature CVD interlayer, the brazed as well as the adhesively bonded samples show very good performance, proving their competitiveness. A high support of the bonding layer could be identified as crucial, though in some cases a lower stiffness of the latter might be acceptable considering the possibility to completely avoid thermal stresses which occur during joining at higher temperatures.

Optical characterization and thermal properties of CVD diamond films for integration with power electronics

NASA Astrophysics Data System (ADS)

Nazari, Mohammad; Hancock, B. Logan; Anderson, Jonathan; Hobart, Karl D.; Feygelson, Tatyana I.; Tadjer, Marko J.; Pate, Bradford B.; Anderson, Travis J.; Piner, Edwin L.; Holtz, Mark W.

2017-10-01

Studies of diamond material for thermal management are reported for a nominally 1-μm thick layer grown on silicon. Thickness of the diamond is measured using spectroscopic ellipsometry. Spectra are consistently modeled using a diamond layer taking into account surface roughness and requiring an interlayer of nominally silicon carbide. The presence of the interlayer is confirmed by transmission electron microscopy. Thermal conductivity is determined based on a heater which is microfabricated followed by back etching to produce a supported diamond membrane. Micro-Raman mapping of the diamond phonon is used to estimate temperature rise under known drive conditions of the resistive heater. Consistent values are obtained for thermal conductivity based on straightforward analytical calculation using phonon shift to estimate temperature and finite element simulations which take both temperature rise and thermal stress into account.

Silicon Oil DC200(R)5CST as AN Alternative Coolant for Cvd Diamond Windows

NASA Astrophysics Data System (ADS)

Vaccaro, A.; Aiello, G.; Meier, A.; Schere, T.; Schreck, S.; Spaeh, P.; Strauss, D.; Gantenbein, G.

2011-02-01

The production of high power mm-wave radiation is a key technology in large fusion devices, since it is required for localized plasma heating and current drive. Transmission windows are necessary to keep the vacuum in the gyrotron system and also act as tritium barriers. With its excellent optical, thermal and mechanical properties, synthetic CVD (Chemical Vapor Deposition) diamond is the state of the art material for the cw transmission of the mm-wave beams produced by high power gyrotrons. The gyrotrons foreseen for the W7-X stellarator are designed for cw operation with 1 MW output power at 140 GHz. The output window unit is designed by TED (Thales Electron Devices, France) using a single edge circumferentially cooled CVD-diamond disc with an aperture of 88 mm. The window unit is cooled by de-ionized water which is considered as chemical aggressive and might cause corrosion in particular at the brazing. The use of a different coolant such as silicon oil could prevent this issue. The cooling circuit has been simulated by steady-state CFD analysis. A total power generation of 1 kW (RF transmission losses) with pure Gaussian distribution has been assumed for the diamond disc. The performance of both water and the industrial silicon oil DC200(R) have been investigated and compared with a focus on the temperature distribution on the disc, the pressure drop across the cooling path and the heat flux distribution. Although the silicon oil has a higher viscosity (~x5), lower heat capacity (~x1/2) and lower thermal conductivity (~x1/3), it has proven to be a good candidate as alternative to water.

Ultrasonic cavity preparation using CVD coated diamond bur: A case report

PubMed Central

de Vasconcellos, Beatriz Tholt; Thompson, Jeffrey Y.; de Paula Macedo, Manoel Roberto; de Oliveira Maia, Janaína Monalisa; Oda, Margareth; Garone-Netto, Narciso

2013-01-01

Before any restorative procedure can be undertaken a proper cavity preparation is required. This clinical step is the mechanical alteration of the tooth to receive a restorative material with which a satisfactory form, function and the esthetics of the tooth will be established. In recent years improvements in materials and techniques have been devised and new technologies are now available for this purpose. The aim of the present study is to report two clinical cases in which a CVD coated diamond bur coupled to an ultrasonic handpiece is used in dental preparation. This technique provides an accurate and conservative tooth preparation with ideal access and visibility and because of enhanced efficiency can also play a role in eliminating some of the patient discomfort of the dental treatment. PMID:23408140

Electrostatic Self-Assembly of Diamond Nanoparticles onto Al- and N-Polar Sputtered Aluminum Nitride Surfaces

PubMed Central

Yoshikawa, Taro; Reusch, Markus; Zuerbig, Verena; Cimalla, Volker; Lee, Kee-Han; Kurzyp, Magdalena; Arnault, Jean-Charles; Nebel, Christoph E.; Ambacher, Oliver; Lebedev, Vadim

2016-01-01

Electrostatic self-assembly of diamond nanoparticles (DNPs) onto substrate surfaces (so-called nanodiamond seeding) is a notable technique, enabling chemical vapor deposition (CVD) of nanocrystalline diamond thin films on non-diamond substrates. In this study, we examine this technique onto differently polarized (either Al- or N-polar) c-axis oriented sputtered aluminum nitride (AlN) film surfaces. This investigation shows that Al-polar films, as compared to N-polar ones, obtain DNPs with higher density and more homogeneously on their surfaces. The origin of these differences in density and homogeneity is discussed based on the hydrolysis behavior of AlN surfaces in aqueous suspensions. PMID:28335345

Highly photostable NV centre ensembles in CVD diamond produced by using N2O as the doping gas

NASA Astrophysics Data System (ADS)

Tallaire, A.; Mayer, L.; Brinza, O.; Pinault-Thaury, M. A.; Debuisschert, T.; Achard, J.

2017-10-01

High density Nitrogen-Vacancy (NV) centre ensembles incorporated in plasma assisted chemical vapour deposition (CVD) diamond are crucial to the development of more efficient sensing devices that use the properties of luminescent defects. Achieving high NV doping with N2 as the dopant gas source during diamond growth is, however, plagued by the formation of macroscopic and point defects that quench luminescence. Moreover, such NVs are found to exhibit poor photostability under high laser powers. Although this effect can be harnessed to locally and durably switch off NV luminescence for data storage, it is usually undesirable for most applications. In this work, the use of N2O as an alternative doping source is proposed. Much higher amounts of the doping gas can be added without significantly generating defects, which allows the incorporation of perfectly photostable and higher density NV ensembles. This effect is believed to be related to the lower dissociation energy of the N2O molecule together with the beneficial effect of the presence of a low and controlled amount of oxygen near the growing surface.

ATLAS DBM Module Qualification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soha, Aria; Gorisek, Andrej; Zavrtanik, Marko

2014-06-18

This is a technical scope of work (TSW) between the Fermi National Accelerator Laboratory (Fermilab) and the experimenters of Jozef Stefan Institute, CERN, and University of Toronto who have committed to participate in beam tests to be carried out during the 2014 Fermilab Test Beam Facility program. Chemical Vapour Deposition (CVD) diamond has a number of properties that make it attractive for high energy physics detector applications. Its large band-gap (5.5 eV) and large displacement energy (42 eV/atom) make it a material that is inherently radiation tolerant with very low leakage currents and high thermal conductivity. CVD diamond is beingmore » investigated by the RD42 Collaboration for use very close to LHC interaction regions, where the most extreme radiation conditions are found. This document builds on that work and proposes a highly spatially segmented diamond-based luminosity monitor to complement the time-segmented ATLAS Beam Conditions Monitor (BCM) so that, when Minimum Bias Trigger Scintillators (MTBS) and LUCID (LUminosity measurement using a Cherenkov Integrating Detector) have difficulty functioning, the ATLAS luminosity measurement is not compromised.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Konov, V I

The properties of new carbon materials (single-crystal and polycrystalline CVD diamond films and wafers, single-wall carbon nanotubes and graphene) and the prospects of their use as optical elements and devices are discussed. (optical elements of laser devices)

Thin film diamond temperature sensor array for harsh aerospace environment

NASA Technical Reports Server (NTRS)

Aslam, M.; Masood, A.; Fredricks, R. J.; Tamor, M. A.

1992-01-01

The feasibility of using polycrystalline CVD diamond films as temperature sensors in harsh aerospace environment associated with hypersonic flights was tested using patterned diamond resistors, fabricated on flat or curved oxidized Si surfaces, as temperature sensors at temperatures between 20 and 1000 C. In this temperature range, the measured resistance was found to vary over 3 orders of magnitude and the temperature coefficient of resistance to change from 0.017/K to 0.003/K. After an annealing treatment, the resistance change was reproducible within 1 percent on the entire temperature range for short measuring times.

Microwave Plasma-Activated Chemical Vapor Deposition of Nitrogen-Doped Diamond. II: CH4/N2/H2 Plasmas

PubMed Central

2016-01-01

We report a combined experimental and modeling study of microwave-activated dilute CH4/N2/H2 plasmas, as used for chemical vapor deposition (CVD) of diamond, under very similar conditions to previous studies of CH4/H2, CH4/H2/Ar, and N2/H2 gas mixtures. Using cavity ring-down spectroscopy, absolute column densities of CH(X, v = 0), CN(X, v = 0), and NH(X, v = 0) radicals in the hot plasma have been determined as functions of height, z, source gas mixing ratio, total gas pressure, p, and input power, P. Optical emission spectroscopy has been used to investigate, with respect to the same variables, the relative number densities of electronically excited species, namely, H atoms, CH, C2, CN, and NH radicals and triplet N2 molecules. The measurements have been reproduced and rationalized from first-principles by 2-D (r, z) coupled kinetic and transport modeling, and comparison between experiment and simulation has afforded a detailed understanding of C/N/H plasma-chemical reactivity and variations with process conditions and with location within the reactor. The experimentally validated simulations have been extended to much lower N2 input fractions and higher microwave powers than were probed experimentally, providing predictions for the gas-phase chemistry adjacent to the diamond surface and its variation across a wide range of conditions employed in practical diamond-growing CVD processes. The strongly bound N2 molecule is very resistant to dissociation at the input MW powers and pressures prevailing in typical diamond CVD reactors, but its chemical reactivity is boosted through energy pooling in its lowest-lying (metastable) triplet state and subsequent reactions with H atoms. For a CH4 input mole fraction of 4%, with N2 present at 1–6000 ppm, at pressure p = 150 Torr, and with applied microwave power P = 1.5 kW, the near-substrate gas-phase N atom concentration, [N]ns, scales linearly with the N2 input mole fraction and exceeds the concentrations [NH]ns, [NH2]ns, and [CN]ns of other reactive nitrogen-containing species by up to an order of magnitude. The ratio [N]ns/[CH3]ns scales proportionally with (but is 102–103 times smaller than) the ratio of the N2 to CH4 input mole fractions for the given values of p and P, but [N]ns/[CN]ns decreases (and thus the potential importance of CN in contributing to N-doped diamond growth increases) as p and P increase. Possible insights regarding the well-documented effects of trace N2 additions on the growth rates and morphologies of diamond films formed by CVD using MW-activated CH4/H2 gas mixtures are briefly considered. PMID:27718565

Nanostructured Diamond Device for Biomedical Applications.

PubMed

Fijalkowski, M; Karczemska, A; Lysko, J M; Zybala, R; KozaneckI, M; Filipczak, P; Ralchenko, V; Walock, M; Stanishevsky, A; Mitura, S

2015-02-01

Diamond is increasingly used in biomedical applications because of its unique properties such as the highest thermal conductivity, good optical properties, high electrical breakdown voltage as well as excellent biocompatibility and chemical resistance. Diamond has also been introduced as an excellent substrate to make the functional microchip structures for electrophoresis, which is the most popular separation technique for the determination of analytes. In this investigation, a diamond electrophoretic chip was manufactured by a replica method using a silicon mold. A polycrystalline 300 micron-thick diamond layer was grown by the microwave plasma-assisted CVD (MPCVD) technique onto a patterned silicon substrate followed by the removal of the substrate. The geometry of microstructure, chemical composition, thermal and optical properties of the resulting free-standing diamond electrophoretic microchip structure were examined by CLSM, SFE, UV-Vis, Raman, XRD and X-ray Photoelectron Spectroscopy, and by a modified laser flash method for thermal property measurements.

A new tubular hot-wire CVD for diamond coating

NASA Astrophysics Data System (ADS)

Motahari, Hamid; Bellah, Samad Moemen; Malekfar, Rasoul

2017-06-01

A new tubular hot-wire chemical vapor deposition (HWCVD) system using a tubular quartz vacuum chamber has been fabricated. The filaments in this system can heat the substrate and act as a gas activator and thermally activator for gas species at the same time. The nano- and microcrystalline diamond coatings on the surface of steel AISI 316 substrates have been grown. To assess the results, SEM and FESEM images and Raman spectroscopy investigations have been applied. The results reveal that micro- and nanocrystalline diamond structures have been formed in the coatings, but the disordered diamond and some non-diamond phases, such as graphitic carbons, are also present in the coating layers. The analytical measurements show the growth of diamond films with well-faceted crystals in (111) direction. However, intrinsic stress, secondary nucleation, and poor adhesion are the main issues of future research for this new designed HWCVD.

A large area diamond-based beam tagging hodoscope for ion therapy monitoring

NASA Astrophysics Data System (ADS)

Gallin-Martel, M.-L.; Abbassi, L.; Bes, A.; Bosson, G.; Collot, J.; Crozes, T.; Curtoni, S.; Dauvergne, D.; De Nolf, W.; Fontana, M.; Gallin-Martel, L.; Hostachy, J.-Y.; Krimmer, J.; Lacoste, A.; Marcatili, S.; Morse, J.; Motte, J.-F.; Muraz, J.-F.; Rarbi, F. E.; Rossetto, O.; Salomé, M.; Testa, É.; Vuiart, R.; Yamouni, M.

2018-01-01

The MoniDiam project is part of the French national collaboration CLaRyS (Contrôle en Ligne de l'hAdronthérapie par RaYonnements Secondaires) for on-line monitoring of hadron therapy. It relies on the imaging of nuclear reaction products that is related to the ion range. The goal here is to provide large area beam detectors with a high detection efficiency for carbon or proton beams giving time and position measurement at 100 MHz count rates (beam tagging hodoscope). High radiation hardness and intrinsic electronic properties make diamonds reliable and very fast detectors with a good signal to noise ratio. Commercial Chemical Vapor Deposited (CVD) poly-crystalline, heteroepitaxial and monocrystalline diamonds were studied. Their applicability as a particle detector was investigated using α and β radioactive sources, 95 MeV/u carbon ion beams at GANIL and 8.5 keV X-ray photon bunches from ESRF. This facility offers the unique capability of providing a focused ( 1 μm) beam in bunches of 100 ps duration, with an almost uniform energy deposition in the irradiated detector volume, therefore mimicking the interaction of single ions. A signal rise time resolution ranging from 20 to 90 ps rms and an energy resolution of 7 to 9% were measured using diamonds with aluminum disk shaped surface metallization. This enabled us to conclude that polycrystalline CVD diamond detectors are good candidates for our beam tagging hodoscope development. Recently, double-side stripped metallized diamonds were tested using the XBIC (X Rays Beam Induced Current) set-up of the ID21 beamline at ESRF which permits us to evaluate the capability of diamond to be used as position sensitive detector. The final detector will consist in a mosaic arrangement of double-side stripped diamond sensors read out by a dedicated fast-integrated electronics of several hundreds of channels.

Nanocrystalline sp{sup 2} and sp{sup 3} carbons: CVD synthesis and applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Terranova, M. L.; Rossi, M.; Tamburri, E., E-mail: emanuela.tamburri@uniroma2.it

The design and production of innovative materials based on nanocrystalline sp{sup 2}- and sp{sup 3}-coordinated carbons is presently a focus of the scientific community. We present a review of the nanostructures obtained in our labs using a series of synthetic routes, which make use of chemical vapor deposition (CVD) techniques for the selective production of non-planar graphitic nanostructures, nanocrystalline diamonds, and hybrid two-phase nanostructures.

Preliminary Results of Field Emission Cathode Tests

NASA Technical Reports Server (NTRS)

Sovey, James S.; Kovaleski, Scott D.

2001-01-01

Preliminary screening tests of field emission cathodes such as chemical vapor deposited (CVD) diamond, textured pyrolytic graphite, and textured copper were conducted at background pressures typical of electric thruster test facilities to assess cathode performance and stability. Very low power electric thrusters which provide tens to hundreds micronewtons of thrust may need field emission neutralizers that have a capability of tens to hundreds of microamperes. From current voltage characteristics, it was found that the CVD diamond and textured metals cathodes clearly satisfied the Fowler-Nordheim emission relation. The CVD diamond and a textured copper cathode had average current densities of 270 and 380 mA/sq cm, respectively, at the beginning-of-life. After a few hours of operation the cathode emission currents degraded by 40 to 75% at background pressures in the 10(exp -5) Pa to 10(exp -4) Pa range. The textured pyrolytic graphite had a modest current density at beginning-of-life of 84 mA/sq cm, but this cathode was the most stable of all. Extended testing of the most promising cathodes is warranted to determine if current degradation is a burn-in effect or whether it is a long-term degradation process. Preliminary experiments with ferroelectric emission cathodes, which are ceramics with spontaneous electric polarization, were conducted. Peak current densities of 30 to 120 mA/sq cm were obtained for pulse durations of about 500 ns in the 10(exp -4) Pa pressure range.

Diamond-Reinforced Matrix Composites

DTIC Science & Technology

1993-05-10

by chemical vapor deposition ( CVD ). 14 While preferable, scratching and oil- coating of substrate filaments 15 may not be absolutely necessary. For...composites. 25 13 Docket No.: N.C. 72,578 PATENT APPLICATION Inventor’s Name: Natishan et al. 1 4) Anti -oxidation coatings such as refractory oxides or 2...the mismatch in the 5 coefficients of thermal expansion (CTE). By coating the 6 reinforcement with diamond prior to the final 7 anti -oxidant coating

Friction and Wear Properties of As-deposited and Carbon Ion-implanted Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1994-01-01

Recent work on the friction and wear properties of as-deposited and carbon ion-implanted diamond films was reviewed. Diamond films were produced by the microwave plasma chemical vapor deposition (CVD) technique. Diamond films with various grain sizes and surface roughnesses were implanted with carbon ions at 60 ke V ion energy, resulting in a dose of 1.2310(exp 17) carbon ions/cm(exp 2). Various analytical techniques, including Raman spectroscopy, proton recoil analysis, Rutherford backscattering, transmission and scanning electron microscopy, x-ray photoelectron spectroscopy, and x-ray diffraction, were utilized to characterize the diamond films. Sliding friction experiments were conducted with a polished natural diamond pin in contact with diamond films in the three environments: humid air (40 percent relative humidity), dry nitrogen (less than 1 percent relative humidity), and ultrahigh vacuum (10(exp -7) Pa). The CVD diamond films indeed have friction and were properties similar to those of natural diamond in the three environments. The as-deposited, fine-grain diamond films can be effectively used as self-lubricating, wear-resistant coatings that have low coefficients of friction (0.02 to 0.04) and low wear rates (10(exp -7) to 10(exp -8)mm(exp 3)/N-m) in both humid air and dry nitrogen. However, they have high coefficients of friction (1.5 to 1.7) and a high wear rate (10(exp -4)mm(exp 3/N-m) in ultrahigh vacuum. The carbon ion implanation produced a thin surficial layer (less than 0.1 micron thick) of amorphous, nondiamond carbon on the diamond films. In humid air and dry nitrogen, the ion-implanted, fine- and coarse-grain diamond films have a low coefficient of friction (around 0.1) and a low wear rate (10(exp -7)mm(exp 3/N-m). Even in ultrahigh vacuum, the presence of the nondiamond carbon layer reduced the coefficient of friction of fine-grain diamond films to 0.1 or lower and the wear rate to 10(exp -6)mm(exp 3)/N-m. Thus, the carbon ion-implanted, fine-grain diamond films can be effectively used as wear-resistant, self-lubricating coatings not only in air and dry nitrogen, but also in ultrahigh vacuum. The wear mechanism of diamond films is that of small fragments chipping off the surface. The size of wear particles is related to the extent of wear rates.

Synthesizing Diamond from Liquid Feedstock

NASA Technical Reports Server (NTRS)

Tzeng, Yonhua

2005-01-01

A relatively economical method of chemical vapor deposition (CVD) has been developed for synthesizing diamond crystals and films. Unlike prior CVD methods for synthesizing diamond, this method does not require precisely proportioned flows of compressed gas feedstocks or the use of electrical discharges to decompose the feedstocks to obtain free radicals needed for deposition chemical reactions. Instead, the feedstocks used in this method are mixtures of common organic liquids that can be prepared in advance, and decomposition of feedstock vapors is effected simply by heating. The feedstock used in this method is a solution comprising between 90 and 99 weight percent of methanol and the balance of one or more other oxyhydrocarbons that could include ethanol, isopropanol, and/or acetone. This mixture of compounds is chosen so that dissociation of molecules results in the desired proportions of carbon-containing radicals (principally, CH3) and of OH, H, and O radicals. Undesirably, the CVD temperature and pressure conditions thermodynamically favor the growth of graphite over the growth of diamond. The H radicals are desirable because they help to stabilize the growing surface of diamond by shifting the thermodynamic balance toward favoring the growth of diamond. The OH and O radicals are desirable because they preferentially etch graphite and other non-diamond carbon, thereby helping to ensure the net deposition of pure diamond. The non-methanol compounds are included in the solution because (1) methanol contains equal numbers of C and O atoms; (2) an excess of C over O is needed to obtain net deposition of diamond; and (3) the non-methanol molecules contain multiple carbon atoms for each oxygen atom and thus supply the needed excess carbon A typical apparatus used in this method includes a reservoir containing the feedstock liquid and a partially evacuated stainless-steel reaction chamber. The reservoir is connected to the chamber via tubing and a needle valve or other suitable flow controller. When the liquid enters the low-pressure environment inside the chamber, it evaporates to form a vapor mixture of the same chemical composition. In addition to the inlet for the feedstock liquid, the chamber is fitted with an outlet connected to a vacuum pump (not shown) through a throttle valve (also not shown) that is automatically controlled to keep the pressure at or near the required value throughout the deposition process. Inside the chamber, a spiral filament made of tungsten, tantalum, graphite, or other high-melting-temperature material is electrically heated to a temperature >2,000 C high enough to cause dissociation of vapor molecules into the aforementioned radicals. A deposition substrate typically, a diamond-polished silicon wafer about 2.5 cm square is positioned about 2 cm away from the filament. The exact location of the substrate is chosen so that the substrate becomes heated by the filament to a deposition temperature in the approximate range of 800 to 1,000 C.

Redox properties of undoped 5 nm diamond nanoparticles.

PubMed

Holt, Katherine B; Ziegler, Christoph; Caruana, Daren J; Zang, Jianbing; Millán-Barrios, Enrique J; Hu, Jingping; Foord, John S

2008-01-14

This paper demonstrates the promoting effects of 5 nm undoped detonation diamond nanoparticles on redox reactions in solution. An enhancement in faradaic current for the redox couples Ru(NH(3))(6)(3+/2+) and Fe(CN)(6)(4-/3-) was observed for a gold electrode modified with a drop-coated layer of nanodiamond (ND), in comparison to the bare gold electrode. The ND layer was also found to promote oxygen reduction. Surface modification of the ND powders by heating in air or in a hydrogen flow resulted in oxygenated and hydrogenated forms of the ND, respectively. Oxygenated ND was found to exhibit the greatest electrochemical activity and hydrogenated ND the least. Differential pulse voltammetry of electrode-immobilised ND layers in the absence of solution redox species revealed oxidation and reduction peaks that could be attributed to direct electron transfer (ET) reactions of the ND particles themselves. It is hypothesised that ND consists of an insulating sp(3) diamond core with a surface that has significant delocalised pi character due to unsatisfied surface atoms and C[double bond, length as m-dash]O bond formation. At the nanoscale surface properties of the particles dominate over those of the bulk, allowing ET to occur between these essentially insulating particles and a redox species in solution or an underlying electrode. We speculate that reversible reduction of the ND may occur via electron injection into available surface states at well-defined reduction potentials and allow the ND particles to act as a source and sink of electrons for the promotion of solution redox reactions.

Cold cathode vacuum discharge tube

DOEpatents

Boettcher, Gordon E.

1998-01-01

A cold cathode vacuum discharge tube, and method for making same, with an interior surface of the trigger probe coated with carbon deposited by carbon vapor deposition (CVD) or diamond-like carbon (DLC) deposition. Preferably a solid graphite insert is employed in the probe-cathode structure in place of an aluminum bushing employed in the prior art. The CVD or DLC probe face is laser scribed to allow resistance trimming to match available trigger voltage signals and to reduce electrical aging.

D.C. Arcjet Diamond Deposition

NASA Astrophysics Data System (ADS)

Russell, Derrek Andrew

1995-01-01

Polycrystalline diamond films synthesized by a D.C. (direct current) arcjet device was reported for the first time in 1988. This device is capable of higher diamond growth rates than any other form of diamond CVD (chemical vapor deposition) process due to its inherent versatility with regard to the enthalpy and fluid properties of the diamond-depositing vapor. Unfortunately, the versatility of this type of device is contrasted by many difficulties such as arc stability and large heat fluxes which make applying it toward diamond deposition a difficult problem. The purpose of this work was to convert the dc arcjet, which is primarily a metallurgical device, into a commercially viable diamond CVD process. The project was divided into two parts: process development and diagnostics. The process development effort concentrated on the certain engineering challenges. Among these was a novel arcjet design that allowed the carbon-source gas to be injected downstream of the tungsten cathode while still facilitating mixture with the main gas feed. Another engineering accomplishment was the incorporation of a water -cooled substrate cooler/spinner that maintained the substrate at the proper temperature, provided the substrate with a large thermal time constant to reduce thermal shock of the diamond film, and enabled the system to achieve a four -inch diameter growth area. The process diagnostics effort concentrated on measurements aimed at developing a fundamental understanding of the properties of the plasma jet such as temperature, plasma density, Mach number, pressure at the substrate, etc. The plasma temperature was determined to be 5195 K by measuring the rotational temperature of C _2 via optical emission spectroscopy. The Mach number of the plasma jet was determined to be ~6.0 as determined by the ratio of the stagnation pressures before and after the shock wave in the plasma jet. The C_2 concentration in the plasma jet was determined to be {~10 }^{12} cm^ {-3} by counting the number of radiated Swan band photons. This is big enough to account for a significant amount (10%) of the diamond growth.

Enamel and Dentin Surface Finishing Influence on the Roughness and Microshear Bond Strength of a Lithium Silicate Glass-Ceramic for Laminate Veneers

PubMed Central

Gonzaga, Carla Castiglia; Bravo, Ruth Peggy; Pavelski, Thiago Vinícius; Garcia, Paula Pontes; Correr, Gisele Maria; Leonardi, Denise Piotto; da Cunha, Leonardo Fernandes; Furuse, Adilson Yoshio

2015-01-01

Objectives. This study evaluated the influence of cavity surface finishing with diamond burs of different grit mounted on high-speed turbine and ultrasound on the roughness and microshear bond strength (MBS) of a lithium silicate glass-ceramic to enamel and dentin. Methods. Enamel and dentin specimens were divided into seven groups, according to the type of surface finishing: 1200-grit sandpaper (control), two different brands of medium-grit and fine-grit diamond burs in a high-speed turbine; medium-grit and fine-grit CVD (chemical vapor deposition) tips in an ultrasonic device. Roughness parameters (n = 5) and MSBS to a glass-ceramic (n = 10) were determined. Data were analyzed using ANOVA and Tukey's test (α = 5%). Results. Control group showed lower mean roughness readings and groups that used medium-grit diamond burs showed the highest mean roughness values. Regarding MSBS, there was no statistical difference when comparing the groups gritted with the same brand of medium- and fine-grit burs and tips. Conclusions. Cavity surface finishing influenced the roughness parameters and MSBS of a glass-ceramic to enamel and dentin. Medium-grit diamond burs in high-speed turbine showed the highest mean roughness values. Fine-grit CVD tips in ultrasound presented the highest MSBS values for both enamel and dentin. PMID:27347507

Enamel and Dentin Surface Finishing Influence on the Roughness and Microshear Bond Strength of a Lithium Silicate Glass-Ceramic for Laminate Veneers.

PubMed

Gonzaga, Carla Castiglia; Bravo, Ruth Peggy; Pavelski, Thiago Vinícius; Garcia, Paula Pontes; Correr, Gisele Maria; Leonardi, Denise Piotto; da Cunha, Leonardo Fernandes; Furuse, Adilson Yoshio

2015-01-01

Objectives. This study evaluated the influence of cavity surface finishing with diamond burs of different grit mounted on high-speed turbine and ultrasound on the roughness and microshear bond strength (MBS) of a lithium silicate glass-ceramic to enamel and dentin. Methods. Enamel and dentin specimens were divided into seven groups, according to the type of surface finishing: 1200-grit sandpaper (control), two different brands of medium-grit and fine-grit diamond burs in a high-speed turbine; medium-grit and fine-grit CVD (chemical vapor deposition) tips in an ultrasonic device. Roughness parameters (n = 5) and MSBS to a glass-ceramic (n = 10) were determined. Data were analyzed using ANOVA and Tukey's test (α = 5%). Results. Control group showed lower mean roughness readings and groups that used medium-grit diamond burs showed the highest mean roughness values. Regarding MSBS, there was no statistical difference when comparing the groups gritted with the same brand of medium- and fine-grit burs and tips. Conclusions. Cavity surface finishing influenced the roughness parameters and MSBS of a glass-ceramic to enamel and dentin. Medium-grit diamond burs in high-speed turbine showed the highest mean roughness values. Fine-grit CVD tips in ultrasound presented the highest MSBS values for both enamel and dentin.

Identification of the structure of the 3107 cm(-1) H-related defect in diamond.

PubMed

Goss, J P; Briddon, P R; Hill, V; Jones, R; Rayson, M J

2014-04-09

A prominent hydrogen-related infrared absorption peak seen in many types of diamonds at 3107 cm(-1) has been the subject of investigation for many years. It is present in natural type-Ia material and can be introduced by heat-treating synthetic or CVD diamond. Based upon the most recent experimental data, it is thought that the defect giving rise to this vibrational mode is vacancy-related and is likely to contain nitrogen. Using first-principles simulations we present a VN3H model for the originating centre that simultaneously satisfies the different experimental observations including the strain response.

Dosimetry with diamond detectors

NASA Astrophysics Data System (ADS)

Gervino, G.; Marino, C.; Silvestri, F.; Lavagno, A.; Truc, F.

2010-05-01

In this paper we present the dosimetry analysis in terms of stability and repeatability of the signal and dose rate dependence of a synthetic single crystal diamond grown by Chemical Vapor Deposition (CVD) technique. The measurements carried out by 5 MeV X-ray photons beam show very promising results, even if the dose rate detector response points out that the charge trapping centers distribution is not uniform inside the crystal volume. This handicap that affects the detectors performances, must be ascribed to the growing process. Synthetic single crystal diamonds could be a valuable alternative to air ionization chambers for quality beam control and for intensity modulated radiation therapy beams dosimetry.

Vertical-Substrate MPCVD Epitaxial Nanodiamond Growth

DOE PAGES

Tzeng, Yan-Kai; Zhang, Jingyuan Linda; Lu, Haiyu; ...

2017-02-09

Color center-containing nanodiamonds have many applications in quantum technologies and biology. Diamondoids, molecular-sized diamonds have been used as seeds in chemical vapor deposition (CVD) growth. However, optimizing growth conditions to produce high crystal quality nanodiamonds with color centers requires varying growth conditions that often leads to ad-hoc and time-consuming, one-at-a-time testing of reaction conditions. In order to rapidly explore parameter space, we developed a microwave plasma CVD technique using a vertical, rather than horizontally oriented stage-substrate geometry. With this configuration, temperature, plasma density, and atomic hydrogen density vary continuously along the vertical axis of the substrate. Finally, this variation allowedmore » rapid identification of growth parameters that yield single crystal diamonds down to 10 nm in size and 75 nm diameter optically active center silicon-vacancy (Si-V) nanoparticles. Furthermore, this method may provide a means of incorporating a wide variety of dopants in nanodiamonds without ion irradiation damage.« less

The edge transient-current technique (E-TCT) with high energy hadron beam

NASA Astrophysics Data System (ADS)

Gorišek, Andrej; Cindro, Vladimir; Kramberger, Gregor; Mandić, Igor; Mikuž, Marko; Muškinja, Miha; Zavrtanik, Marko

2016-09-01

We propose a novel way to investigate the properties of silicon and CVD diamond detectors for High Energy Physics experiments complementary to the already well-established E-TCT technique using laser beam. In the proposed setup the beam of high energy hadrons (MIPs) is used instead of laser beam. MIPs incident on the detector in the direction parallel to the readout electrode plane and perpendicular to the edge of the detector. Such experiment could prove very useful to study CVD diamond detectors that are almost inaccessible for the E-TCT measurements with laser due to large band-gap as well as to verify and complement the E-TCT measurements of silicon. The method proposed is being tested at CERN in a beam of 120 GeV hadrons using a reference telescope with track resolution at the DUT of few μm. The preliminary results of the measurements are presented.

Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference (ADC/FCT 2003)

NASA Technical Reports Server (NTRS)

Murakawa, M. (Editor); Miyoshi, K. (Editor); Koga, Y. (Editor); Schaefer, L. (Editor); Tzeng, Y. (Editor)

2003-01-01

These are the Proceedings of the Seventh Applied Diamond Conference/Third Frontier Carbon Technology Joint Conference held at Epochal Tsukuba International Conference Center from August 18 to 21, 2003. The diamond CVD process was first reported by Dr. Spitsyn in 1981 and Prof. S. Iijima reported his discovery of carbon nanotubes in 1991. In the past years, both diamond-related materials and novel carbon materials have attracted considerable interest by the scientific, technological, and industrial community. Many practical and commercial products of diamond materials are reported in these proceedings. A broad variety of applications of carbon nanotubes and novel carbons have also been explored and demonstrated. Having more than 175 invited and contributing papers by authors from over 18 countries for presentations at ADC/FCT 2003 clearly demonstrates that these materials, due to the combination of their superior properties, are both scientifically amazing and economically significant.

Diamond and diamondlike carbon as wear-resistant, self-lubricating coatings for silicon nitride

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1995-01-01

Recent work on the friction and wear properties of as-deposited fine-grain diamond, polished coarse-grain diamond, and as-deposited diamondlike carbon (DLC) films in humid air at a relative humidity of approximately 40 percent and in dry nitrogen is reviewed. Two types of chemical vapor deposition (CVD) processes are used to deposit diamond films on silicon nitride (Si3N4) substrates: microwave-plasma and hot-filament. Ion beams are used to deposit DLC films of Si3N4 substrates. The diamond and DLC films in sliding contact with hemispherical bare Si3N4 pins have low steady-state coefficients of friction (less than 0.2) and low wear rates (less than 10(exp -7) mm(exp 2)/N-m), and thus, can be used effectively as wear-resistant, self-lubricating coatings for Si3N4 in the aforementioned two environments.

Proceedings of the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference (ADC/FCT 2001)

NASA Technical Reports Server (NTRS)

Tzeng, Y. (Editor); Miyoshi, K. (Editor); Yoshikawa, M. (Editor); Murakawa, M. (Editor); Koga, Y. (Editor); Kobashi, K. (Editor); Amaratunga, G. A. J. (Editor)

2001-01-01

These are the Proceedings of the Sixth Applied Diamond Conference/Second Frontier Carbon Technology Joint Conference hosted by Auburn University from August 6 to 10, 2001. The diamond CVD process was first reported by Dr. Spitsyn in 1981 and Prof. S. Iijima reported his discovery of carbon nanotubes in 1991. In the past years, both diamond-related materials and novel carbon materials have attracted considerable interest by the scientific, technological, and industrial community. Many practical and commercial products of diamond materials are reported in these proceedings. A broad variety of applications of carbon nanotubes and novel carbons have also been explored and demonstrated. Having more than 200 invited and contributing papers by authors from over 20 countries for presentations at ADC/FCT 2001 clearly demonstrates that these materials, due to the combination of their superior properties, are both scientifically amazing and economically significant.

The first bump-bonded pixel detectors on CVD diamond

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Palmieri, V. G.; Pan, L. S.; Peitz, A.; Pernicka, M.; Pirollo, S.; Polesello, P.; Pretzl, K.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Steuerer, J.; Stone, R.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Turchetta, R.; Vittone, E.; Wagner, A.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; Zeuner, W.; Ziock, H.; Zoeller, M.; Charles, E.; Ciocio, A.; Dao, K.; Einsweiler, K.; Fasching, D.; Gilchriese, M.; Joshi, A.; Kleinfelder, S.; Milgrome, O.; Palaio, N.; Richardson, J.; Sinervo, P.; Zizka, G.; RD42 Collaboration

1999-11-01

Diamond is a nearly ideal material for detecting ionising radiation. Its outstanding radiation hardness, fast charge collection and low leakage current allow it to be used in high radiation environments. These characteristics make diamond sensors particularly appealing for use in the next generation of pixel detectors. Over the last year, the RD42 collaboration has worked with several groups that have developed pixel readout electronics in order to optimise diamond sensors for bump-bonding. This effort resulted in an operational diamond pixel sensor that was tested in a pion beam. We demonstrate that greater than 98% of the channels were successfully bump-bonded and functioning. The device shows good overall hit efficiency as well as clear spatial hit correlation to tracks measured in a silicon reference telescope. A position resolution of 14.8 μm was observed, consistent with expectations given the detector pitch.

Quantifying the limits of through-plane thermal dissipation in 2D-material-based systems

NASA Astrophysics Data System (ADS)

Yasaei, Poya; Behranginia, Amirhossein; Hemmat, Zahra; El-Ghandour, Ahmed I.; Foster, Craig D.; Salehi-Khojin, Amin

2017-09-01

Through-plane thermal transport accounts for a major fraction of heat dissipation from hot-spots in many existing devices made of two-dimensional (2D) materials. In this report, we performed a set of electrical thermometry measurements and 3D finite element analyses to quantify the limits of power dissipation in monolayer graphene, a representative of 2D materials, fabricated on various technologically viable substrates such as chemical vapor deposited (CVD) diamond, tape-casted (sintered) aluminum nitride (AlN), and single crystalline c-plane sapphire as well as silicon with different oxide layers. We demonstrate that the heat dissipation through graphene on AlN substrate near room temperature outperforms those of CVD diamond and other studied substrates, owing to its superior thermal boundary conductance (TBC). At room temperature, our measurements reveal a TBC of 33.5 MW · m-2 · K-1 for graphene on AlN compared to 6.2 MW · m-2 · K-1 on diamond. This study highlights the importance of simultaneous optimization of the interfaces and the substrate and provides a route to maximize the heat removal capability of 2D-material-based devices.

Characterization of CVD micrometer-size diamond (abstract)

NASA Astrophysics Data System (ADS)

Ohsumi, K.; Hagiya, K.; Miyamoto, M.; Matsuda, J.; Ohmasa, M.

1989-07-01

In the field of material sciences, it has long been desired to develope the equipment to obtain crystallographic information of micrometer-size crystalline substances. Synchrotron radiation (SR) could be a candidate to deal with such a small specimen other than electron microscope. It seems more advantageous to utilize SR from the viewpoint that the processing of the diffraction data that has already been established for identification of the materials, structure analysis, and refinement. Even in the case of SR, special care should be taken for the measurement of very weak diffracted intensities. In the case not using SR, the size of 50 μm might be the limit for the specimen to be examined by the diffraction method. The diffracted intensity is proportional to the volume of the specimen, and that of micrometer-size crystal is estimated as 10-5 times of that of the limit mentioned above. The noise level of the experiment, therefore, should be as low as possible. If the noise level becomes negligibly small, the signal could be accumulated continually to the desired intensity level by adjusting measuring time. The experiment, for the purpose, should be carried out in vacuum with the stational crystal method and with very narrow collimated x-ray beams. The Laue method is employed by the above reason, as well as the fact that the intensity of each Bragg reflection on a reciprocal row passing through the origin of the reciprocal space is superposed with each other, which also intensifies a diffraction spot on the photographic plate. The Laue camera is set up at BL-4B of Photon Factory, sealed in vacuum and installed with a very narrow collimater. The development of the system has been performed to the level which several Bragg reflections of molybdenum single crystal with 0.8 μm in its diameter can be taken on the imaging plate for 50-min exposure with ring current from 128 to 125 mA. The origin of diamonds in meteorites has been a controversy as to whether they are formed from carbonaceous materials by impact shock or directly formed from vapor. Recent discovery of vapor-growth diamonds in carbonaceous chondrites has generated a renewed interest in the origin of ureilite diamonds. Two types of micrometer-size diamonds were prepared. One of them was grown under low pressure by chemical vapor deposition (CVD) from gaseous mixtures of H2 and CH4, and another was synthesized by shock effect (kindly offered by Nippon Oil & Fats Co., Ltd.) The micro-Laue method was applied to them in order to get information about their microstructures. Two characteristics are recognized in profiles of reflections themselves and in whole patterns of the Laue photographs. The reflections of CVD diamonds are elongated but symmetric in their profiles and are distributed regularly as they are indexed by the diamond lattice, while those of shock effect are also elongated and asymmetric, and are distributed at random as they cannot be indexed. The characteristics observed by the method may be useful to ascribe the origin to CVD or shock effect.

Cold cathode vacuum discharge tube

DOEpatents

Boettcher, G.E.

1998-03-10

A cold cathode vacuum discharge tube, and method for making same, are disclosed with an interior surface of the trigger probe coated with carbon deposited by carbon vapor deposition (CVD) or diamond-like carbon (DLC) deposition. Preferably a solid graphite insert is employed in the probe-cathode structure in place of an aluminum bushing employed in the prior art. The CVD or DLC probe face is laser scribed to allow resistance trimming to match available trigger voltage signals and to reduce electrical aging. 15 figs.

Cold cathode vacuum discharge tube

DOEpatents

Boettcher, G.E.

1998-04-14

A cold cathode vacuum discharge tube, and method for making same, with an interior surface of the trigger probe coated with carbon deposited by chemical vapor deposition (CVD) or diamond-like carbon (DLC) deposition are disclosed. Preferably a solid graphite insert is employed in the probe-cathode structure in place of an aluminum bushing employed in the prior art. The CVD or DLC probe face is laser scribed to allow resistance trimming to match available trigger voltage signals and to reduce electrical aging. 14 figs.

Growth of High-Quality Carbon Nanotudes on Free-Standing Diamond Substrates (Postprint)

DTIC Science & Technology

2010-03-01

thickness and consisting of 20 nm diameter tubes were observed to grow in a thermal CVD system using C2H2 as precursor, Transmission electron microscopy...multi walled CNTs forming a mat of 5 lm thickness and consisting of 20 nm diameter tubes were observed to grow in a thermal CVD system using C2H2...desired devices. For example, chip cooling with CNT microfin architectures have been recently proposed by Kordas et al. [5]. CNT films as thermal

Diamond structure recovery during ion irradiation at elevated temperatures

NASA Astrophysics Data System (ADS)

Deslandes, Alec; Guenette, Mathew C.; Belay, Kidane; Elliman, Robert G.; Karatchevtseva, Inna; Thomsen, Lars; Riley, Daniel P.; Lumpkin, Gregory R.

2015-12-01

CVD diamond is irradiated by 5 MeV carbon ions, with each sample held at a different temperature (300-873 K) during irradiations. The defect structures resulting from the irradiations are evident as vacancy, interstitial and amorphous carbon signals in Raman spectra. The observed variation of the full width at half maximum (FWHM) and peak position of the diamond peak suggests that disorder in the diamond lattice is reduced for high temperature irradiations. The dumbbell interstitial signal is reduced for irradiations at 873 K, which suggests this defect is unstable at these temperatures and that interstitials have migrated to crystal surfaces. Near edge X-ray absorption fine structure (NEXAFS) spectroscopy results indicate that damage to the diamond structure at the surface has occurred for room temperature irradiations, however, this structure is at least partially recovered for irradiations performed at 473 K and above. The results suggest that, in a high temperature irradiation environment such as a nuclear fusion device, in situ annealing of radiation-created defects can maintain the diamond structure and prolong the lifetime of diamond components.

Magnetoresistance and charge transport in graphene governed by nitrogen dopants.

PubMed

Rein, Markus; Richter, Nils; Parvez, Khaled; Feng, Xinliang; Sachdev, Hermann; Kläui, Mathias; Müllen, Klaus

2015-02-24

We identify the influence of nitrogen-doping on charge- and magnetotransport of single layer graphene by comparing doped and undoped samples. Both sample types are grown by chemical vapor deposition (CVD) and transferred in an identical process onto Si/SiO2 wafers. We characterize the samples by Raman spectroscopy as well as by variable temperature magnetotransport measurements. Over the entire temperature range, the charge transport properties of all undoped samples are in line with literature values. The nitrogen doping instead leads to a 6-fold increase in the charge carrier concentration up to 4 × 10(13) cm(-2) at room temperature, indicating highly effective doping. Additionally it results in the opening of a charge transport gap as revealed by the temperature dependence of the resistance. The magnetotransport exhibits a conspicuous sign change from positive Lorentz magnetoresistance (MR) in undoped to large negative MR that we can attribute to the doping induced disorder. At low magnetic fields, we use quantum transport signals to quantify the transport properties. Analyses based on weak localization models allow us to determine an orders of magnitude decrease in the phase coherence and scattering times for doped samples, since the dopants act as effective scattering centers.

Diamond X-ray Photodiode for White and Monochromatic SR beams

PubMed Central

Keister, Jeffrey W.; Smedley, John; Muller, Erik M.; Bohon, Jen; Héroux, Annie

2011-01-01

High purity, single crystal CVD diamond plates are screened for quality and instrumented into a sensor assembly for quantitative characterization of flux and position sensitivity. Initial investigations have yielded encouraging results and have led to further development. Several limiting complications are observed and discussed, as well as mitigations thereof. For example, diamond quality requirements for x-ray diodes include low nitrogen impurity and crystallographic defectivity. Thin electrode windows and electronic readout performance are ultimately also critical to device performance. Promising features observed so far from prototype devices include calculable responsivity, flux linearity, position sensitivity and timing performance. Recent results from testing in high flux and high speed applications are described. PMID:21822344

Diamond MEMS: wafer scale processing, devices, and technology insertion

NASA Astrophysics Data System (ADS)

Carlisle, J. A.

2009-05-01

Diamond has long held the promise of revolutionary new devices: impervious chemical barriers, smooth and reliable microscopic machines, and tough mechanical tools. Yet it's been an outsider. Laboratories have been effectively growing diamond crystals for at least 25 years, but the jump to market viability has always been blocked by the expense of diamond production and inability to integrate with other materials. Advances in chemical vapor deposition (CVD) processes have given rise to a hierarchy of carbon films ranging from diamond-like carbon (DLC) to vapor-deposited diamond coatings, however. All have pros and cons based on structure and cost, but they all share some of diamond's heralded attributes. The best performer, in theory, is the purest form of diamond film possible, one absent of graphitic phases. Such a material would capture the extreme hardness, high Young's modulus and chemical inertness of natural diamond. Advanced Diamond Technologies Inc., Romeoville, Ill., is the first company to develop a distinct chemical process to create a marketable phase-pure diamond film. The material, called UNCD® (for ultrananocrystalline diamond), features grain sizes from 3 to 300 nm in size, and layers just 1 to 2 microns thick. With significant advantages over other thin films, UNCD is designed to be inexpensive enough for use in atomic force microscopy (AFM) probes, microelectromechanical machines (MEMS), cell phone circuitry, radio frequency devices, and even biosensors.

Preface: phys. stat. sol. (a) 202/11

NASA Astrophysics Data System (ADS)

Bergonzo, Philippe; Nesládek, Milo

2005-09-01

The present issue of physica status solidi (a) contains a collection of 31 papers presented at the 10th International Workshop on Surface and Bulk Defects in CVD Diamond Films held in Diepenbeek-Hasselt, Belgium, 23-25 February 2005. The 10th anniversary of the meeting proved the success of the concept, which originated in 1996 with the idea of bringing together scientists who are active and innovative in the field of electronic and optical properties of thin film diamond. This year the programme contained 9 invited oral talks, 14 contributed oral talks and 34 posters. 103 Participants from 14 countries (Austria, Belgium, Czech Republic, Finland, France, Germany, Japan, Mexico, Poland, Slovak Republic, Sweden, Switzerland, UK, USA) took part in the meeting. The meeting was traditionally directed towards topics ranging from defects and their characterization as well as electrical transport in CVD diamond towards modern diamond thin film devices including bio-sensing applications. Also, diamond homoepitaxial and heteroepitaxial growth, doping, hydrogen induced surface conductivity and several other topics including defects in boron nitride materials were addressed. Intense and lively discussions were as usual part of this meeting to which the hospitality of the city of Hasselt contributed greatly.The workshop would have not been possible without the support of many people and institutions. We also acknowledge the financial support of the Scientific Research Community of the F.W.O.-Vlaanderen (Belgium) and the University of Hasselt. We also thank the editorial staff of physica status solidi, most notably Stefan Hildebrandt, for their excellent and patient work. Finally, we would like to thank Ken Haenen, whose skills for the successful organization are gratefully acknowledged.August 2005

Metalorganic Chemical Vapor Deposition of Ruthenium-Doped Diamond like Carbon Films

NASA Technical Reports Server (NTRS)

Sunkara, M. K.; Ueno, M.; Lian, G.; Dickey, E. C.

2001-01-01

We investigated metalorganic precursor deposition using a Microwave Electron Cyclotron Resonance (ECR) plasma for depositing metal-doped diamondlike carbon films. Specifically, the deposition of ruthenium doped diamondlike carbon films was investigated using the decomposition of a novel ruthenium precursor, Bis(ethylcyclopentadienyl)-ruthenium (Ru(C5H4C2H5)2). The ruthenium precursor was introduced close to the substrate stage. The substrate was independently biased using an applied RF power. Films were characterized using Fourier Transform Infrared Spectroscopy (FTIR), Transmission Electron Microscopy (TEM) and Four Point Probe. The conductivity of the films deposited using ruthenium precursor showed strong dependency on the deposition parameters such as pressure. Ruthenium doped sample showed the presence of diamond crystallites with an average size of approx. 3 nm while un-doped diamondlike carbon sample showed the presence of diamond crystallites with an average size of 11 nm. TEM results showed that ruthenium was atomically dispersed within the amorphous carbon network in the films.

Charge transfer effects, thermo and photochromism in single crystal CVD synthetic diamond.

PubMed

Khan, R U A; Martineau, P M; Cann, B L; Newton, M E; Twitchen, D J

2009-09-09

We report on the effects of thermal treatment and ultraviolet irradiation on the point defect concentrations and optical absorption profiles of single crystal CVD synthetic diamond. All thermal treatments were below 850 K, which is lower than the growth temperature and unlikely to result in any structural change. UV-visible absorption spectroscopy measurements showed that upon thermal treatment (823 K), various broad absorption features diminished: an absorption band at 270 nm (used to deduce neutral single substitutional nitrogen (N(S)(0)) concentrations) and also two broad features centred at approximately 360 and 520 nm. Point defect centre concentrations as a function of temperature were also deduced using electron paramagnetic resonance (EPR) spectroscopy. Above ∼500 K, we observed a decrease in the concentration of N(S)(0) centres and a concomitant increase in the negatively charged nitrogen-vacancy-hydrogen (NVH) complex (NVH(-)) concentration. Both transitions exhibited an activation energy between 0.6 and 1.2 eV, which is lower than that for the N(S)(0) donor (∼1.7 eV). Finally, it was found that illuminating samples with intense short-wave ultraviolet light recovered the N(S)(0) concentration and also the 270, 360 and 520 nm absorption features. From these results, we postulate a valence band mediated charge transfer process between NVH and single nitrogen centres with an acceptor trap depth for NVH of 0.6-1.2 eV. Because the loss of N(S)(0) concentration is greater than the increase in NVH(-) concentration we also suggest the presence of another unknown acceptor existing at a similar energy to NVH. The extent to which the colour in CVD synthetic diamond is dependent on prior history is discussed.

Diamond bio electronics.

PubMed

Linares, Robert; Doering, Patrick; Linares, Bryant

2009-01-01

The use of diamond for advanced applications has been the dream of mankind for centuries. Until recently this dream has been realized only in the use of diamond for gemstones and abrasive applications where tons of diamonds are used on an annual basis. Diamond is the material system of choice for many applications, but its use has historically been limited due to the small size, high cost, and inconsistent (and typically poor) quality of available diamond materials until recently. The recent development of high quality, single crystal diamond crystal growth via the Chemical Vapor Deposition (CVD) process has allowed physcists and increasingly scientists in the life science area to think beyond these limitations and envision how diamond may be used in advanced applications ranging from quantum computing, to power generation and molecular imaging, and eventually even diamond nano-bots. Because of diamond's unique properties as a bio-compatible material, better understanding of diamond's quantum effects and a convergence of mass production, semiconductor-like fabrication process, diamond now promises a unique and powerful key to the realization of the bio-electronic devices being envisioned for the new era of medical science. The combination of robust in-the-body diamond based sensors, coupled with smart bio-functionalized diamond devices may lead to diamond being the platform of choice for bio-electronics. This generation of diamond based bio-electronic devices would contribute substantially to ushering in a paradigm shift for medical science, leading to vastly improved patient diagnosis, decrease of drug development costs and risks, and improved effectiveness of drug delivery and gene therapy programs through better timed and more customized solutions.

Friction Durability of Extremely Thin Diamond-Like Carbon Films at High Temperature

PubMed Central

Miyake, Shojiro; Suzuki, Shota; Miyake, Masatoshi

2017-01-01

To clarify the friction durability, both during and after the high-temperature heating of nanometer-thick diamond-like carbon (DLC) films, deposited using filtered cathodic vacuum arc (FCVA) and plasma chemical vapor deposition (P-CVD) methods, the dependence of the friction coefficient on the load and sliding cycles of the DLC films, were evaluated. Cluster-I consisted of a low friction area in which the DLC film was effective, while cluster-II consisted of a high friction area in which the lubricating effect of the DLC film was lost. The friction durability of the films was evaluated by statistical cluster analysis. Extremely thin FCVA-DLC films exhibited an excellent wear resistance at room temperature, but their friction durability was decreased at high temperatures. In contrast, the durability of the P-CVD-DLC films was increased at high temperatures when compared with that observed at room temperature. This inverse dependence on temperature corresponded to the nano-friction results obtained by atomic force microscopy. The decrease in the friction durability of the FCVA-DLC films at high temperatures, was caused by a complex effect of temperature and friction. The tribochemical reaction produced by the P-CVD-DLC films reduced their friction coefficient, increasing their durability at high temperatures. PMID:28772520

Friction Durability of Extremely Thin Diamond-Like Carbon Films at High Temperature.

PubMed

Miyake, Shojiro; Suzuki, Shota; Miyake, Masatoshi

2017-02-10

To clarify the friction durability, both during and after the high-temperature heating of nanometer-thick diamond-like carbon (DLC) films, deposited using filtered cathodic vacuum arc (FCVA) and plasma chemical vapor deposition (P-CVD) methods, the dependence of the friction coefficient on the load and sliding cycles of the DLC films, were evaluated. Cluster-I consisted of a low friction area in which the DLC film was effective, while cluster-II consisted of a high friction area in which the lubricating effect of the DLC film was lost. The friction durability of the films was evaluated by statistical cluster analysis. Extremely thin FCVA-DLC films exhibited an excellent wear resistance at room temperature, but their friction durability was decreased at high temperatures. In contrast, the durability of the P-CVD-DLC films was increased at high temperatures when compared with that observed at room temperature. This inverse dependence on temperature corresponded to the nano-friction results obtained by atomic force microscopy. The decrease in the friction durability of the FCVA-DLC films at high temperatures, was caused by a complex effect of temperature and friction. The tribochemical reaction produced by the P-CVD-DLC films reduced their friction coefficient, increasing their durability at high temperatures.

Testing of a sCVD diamond detection system in the CROCUS reactor

NASA Astrophysics Data System (ADS)

Hursin, M.; Weiss, C.; Frajtag, P.; Lamirand, V.; Perret, G.; Kavrigin, P.; Pautz, A.; Griesmayer, E.

2018-05-01

The paper describes the testing of the NEUTON detection system into CROCUS, the zero-power reactor of the École Polytechnique Fédérale de Lausanne (EPFL). NEUTON is composed of a 4 mm × 4 mm sCVD diamond detector with a 6Li converter and the associated acquisition electronics. It is developed by CIVIDEC Instrumentation GmbH. The use of a diamond detector with converter in the mixed radiation field of a nuclear reactor is challenging because these detectors are sensitive to gamma-rays, fast neutrons and thermal neutrons through conversion in 6Li . In NEUTON, the rejection of gamma-rays is achieved in real time, via the analysis of the signal pulse shape from the detector. To do so, a few signal characteristics (amplitude, area and FWHM) are recorded in the integrated Field Programmable Gate Arrays (FPGA) of the system. This treatment does not induce any dead time. Measurements in CROCUS demonstrated for the first time the capability of a system like NEUTON to detect and separate fast neutrons, thermal neutrons, and gamma-rays. The system response was shown to be linear with respect to the reactor power (up to 35W) and its thermal sensitivity was found to be (3.5± 0.2)× 10^{-5} cps/nv.

Micro-Raman Analysis of Irradiated Diamond Films

NASA Technical Reports Server (NTRS)

Newton, Robert L.

2003-01-01

Owing to its unique and robust physical properties, diamond is a much sought after material for use in advanced technologies, even in Microelectromechanical Systems (MEMS). The volume and weight savings promised by MEMS-based devices are of particular interest to spaceflight applications. However, much basic materials science research remains to be completed in this field. Results of micro-Raman analysis of proton (10(exp 15) - 10(exp 17) H(+)/sq cm doses) irradiated chemical vapor deposited (CVD) films are presented and indicate that their microstructure is retained even after high radiation exposure.

Dedicated multichannel readout ASIC coupled with single crystal diamond for dosimeter application

NASA Astrophysics Data System (ADS)

Fabbri, A.; Falco, M. D.; De Notaristefani, F.; Galasso, M.; Marinelli, M.; Orsolini Cencelli, V.; Tortora, L.; Verona, C.; Verona Rinati, G.

2013-02-01

This paper reports on the tests of a low-noise, multi-channel readout integrated circuit used as a readout electronic front-end for a diamond multi-pixel dosimeter. The system is developed for dose distribution measurement in radiotherapy applications. The first 10-channel prototype chip was designed and fabricated in a 0.18 um CMOS process. Every channel includes a charge integrator with a 10 pF capacitor and a double slope A/D converter. The diamond multi-pixel detector, based on CVD synthetic single crystal diamond Schottky diodes, is made by a 3 × 3 sensor matrix. The overall device has been tested under irradiation with 6 MeV radio therapeutic photon beams at the Policlinico ``Tor Vergata'' (PTV) hospital. Measurements show a 20 fA RMS leakage current from the front-end input stage and a negligible dark current from the diamond detector, a stable temporal response and a good linear behaviour as a function of both dose and dose rate. These characteristics were common to each tested channel.

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Peiyu, JI; Jun, YU; Tianyuan, HUANG; Chenggang, JIN; Yan, YANG; Lanjian, ZHUGE; Xuemei, WU

2018-02-01

A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h-1 at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H α radicals play an important role in the growth of DLC films. The results show that the H α radicals are beneficial to the formation and stabilization of C=C bond from sp2 to sp3.

Preferential orientation of NV defects in CVD diamond films grown on (113)-oriented substrates

NASA Astrophysics Data System (ADS)

Lesik, M.; Plays, T.; Tallaire, A.; Achard, J.; Brinza, O.; William, L.; Chipaux, M.; Toraille, L.; Debuisschert, T.; Gicquel, A.; Roch, J. F.; Jacques, V.

2015-06-01

Thick CVD diamond layers were successfully grown on (113)-oriented substrates. They exhibited smooth surface morphologies and a crystalline quality comparable to (100) electronic grade material, and much better than (111)-grown layers. High growth rates (15-50 {\\mu}m/h) were obtained while nitrogen doping could be achieved in a fairly wide range without seriously imparting crystalline quality. Electron spin resonance measurements were carried out to determine NV centers orientation and concluded that one specific orientation has an occurrence probability of 73 % when (100)-grown layers show an equal distribution in the 4 possible directions. A spin coherence time of around 270 {\\mu}s was measured which is equivalent to that reported for material with similar isotopic purity. Although a higher degree of preferential orientation was achieved with (111)-grown layers (almost 100 %), the ease of growth and post-processing of the (113) orientation make it a potentially useful material for magnetometry or other quantum mechanical applications.

The ATLAS Diamond Beam Monitor: Luminosity detector at the LHC

NASA Astrophysics Data System (ADS)

Schaefer, D. M.; ATLAS Collaboration

2016-07-01

After the first three years of the LHC running, the ATLAS experiment extracted its pixel detector system to refurbish and re-position the optical readout drivers and install a new barrel layer of pixels. The experiment has also taken advantage of this access to install a set of beam monitoring telescopes with pixel sensors, four each in the forward and backward regions. These telescopes are based on chemical vapor deposited (CVD) diamond sensors to survive in this high radiation environment without needing extensive cooling. This paper describes the lessons learned in construction and commissioning of the ATLAS Diamond Beam Monitor (DBM). We show results from the construction quality assurance tests and commissioning performance, including results from cosmic ray running in early 2015.

High resolution, monochromatic x-ray topography capability at CHESS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Finkelstein, K. D., E-mail: kdf1@cornell.edu; Pauling, A.; Brown, Z.

2016-07-27

CHESS has a monochromatic x-ray topography capability serving continually expanding user interest. The setup consists of a beam expanding monochromator, 6-circle diffactometer, and CHESS designed CMOS camera with real time sample-alignment capability. This provides rocking curve mapping with angle resolution as small as 2 µradians, spatial resolution to 3 microns, and field of view up to 7mm. Thus far the capability has been applied for: improving CVD-diamond growth, evaluating perfection of ultra-thin diamond membranes, correlating performance of diamond-based electronics with crystal defect structure, and defect analysis of single crystal silicon carbide. This paper describes our topography system, explains its capabilities,more » and presents experimental results from several applications.« less

Monocrystalline CVD-diamond optics for high-power laser applications

NASA Astrophysics Data System (ADS)

Holly, C.; Traub, M.; Hoffmann, D.; Widmann, C.; Brink, D.; Nebel, C.; Gotthardt, T.; Sözbir, M. C.; Wenzel, C.

2016-03-01

The potential of diamond as an optical material for high-power laser applications in the wavelength regime from the visible spectrum (VIS) to the near infrared (NIR) is investigated. Single-crystal diamonds with lateral dimensions up to 7×7mm2 are grown with microwave plasma assisted chemical vapor deposition (MPACVD) in parallel with up to 60 substrates and are further processed to spherical optics for beam guidance and shaping. The synthetic diamonds offer superior thermal, mechanical and optical properties, including low birefringence, scattering and absorption, also around 1 μm wavelength. We present dielectric (AR and HR) coated single-crystal diamond optics which are tested under high laser power in the multi-kW regime. The thermally induced focal shift of the diamond substrates is compared to the focal shift of a standard collimating and focusing unit for laser cutting made of fused silica optics. Due to the high thermal conductivity and low absorption of the diamond substrates compared to the fused silica optics no additional focal shift caused by a thermally induced refractive index change in the diamond is observed in our experiments. We present experimental results regarding the performance of the diamond substrates with and without dielectric coatings under high power and the influences of growth induced birefringence on the optical quality. Finally, we discuss the potential of the presented diamond lenses for high-power applications in the field of laser materials processing.

Improvements in the Formation of Boron-Doped Diamond Coatings on Platinum Wires Using the Novel Nucleation Process (NNP)

PubMed Central

Fhaner, Mathew; Zhao, Hong; Bian, Xiaochun; Galligan, James J.; Swain, Greg M.

2010-01-01

In order to increase the initial nucleation density for the growth of boron-doped diamond on platinum wires, we employed the novel nucleation process (NNP) originally developed by Rotter et al. and discussed by others [1–3]. This pretreatment method involves (i) the initial formation of a thin carbon layer over the substrate followed by (ii) ultrasonic seeding of this “soft” carbon layer with nanoscale particles of diamond. This two-step pretreatment is followed by the deposition of boron-doped diamond by microwave plasma-assisted CVD. Both the diamond seed particles and sites on the carbon layer itself function as the initial nucleation zones for diamond growth from an H2-rich source gas mixture. We report herein on the characterization of the pre-growth carbon layer formed on Pt as well as boron-doped films grown for 2, 4 and 6 h post NNP pretreatment. Results from scanning electron microscopy, Raman spectroscopy and electrochemical studies are reported. The NNP method increases the initial nucleation density on Pt and leads to the formation of a continuous diamond film in a shorter deposition time than is typical for wires pretreated by conventional ultrasonic seeding. The results indicate that the pregrowth layer itself consists of nanoscopic domains of diamond and functions well to enhance the initial nucleation of diamond without any diamond powder seeding. PMID:21617759

The low coherence Fabry-Pérot interferometer with diamond and ZnO layers

NASA Astrophysics Data System (ADS)

Majchrowicz, D.; Den, W.; Hirsch, M.

2016-09-01

The authors present a fiber-optic Fabry-Pérot interferometer built with the application of diamond and zinc oxide (ZnO) thin layers. Thin ZnO films were deposited on the tip of a standard telecommunication single-mode optical fiber (SMF- 28) while the diamond layer was grown on the plate of silicon substrate. Investigated ZnO layers were fabricated by atomic layer deposition (ALD) and the diamond films were deposited using Microwave Plasma Enhanced Chemical Vapor Deposition (μPE CVD) system. Different thickness of layers was examined. The measurements were performed for the fiber-optic Fabry-Pérot interferometer working in the reflective mode. Spectra were registered for various thicknesses of ZnO layer and various length of the air cavity. As a light source, two superluminescent diodes (SLD) with central wavelength of 1300 nm and 1550 nm were used in measurement set-up.

Single crystal CVD diamond membranes for betavoltaic cells

NASA Astrophysics Data System (ADS)

Delfaure, C.; Pomorski, M.; de Sanoit, J.; Bergonzo, P.; Saada, S.

2016-06-01

A single crystal diamond large area thin membrane was assembled as a p-doped/Intrinsic/Metal (PIM) structure and used in a betavoltaic configuration. When tested with a 20 keV electron beam from a high resolution scanning electron microscope, we measured an open circuit voltage (Voc) of 1.85 V, a charge collection efficiency (CCE) of 98%, a fill-factor of 80%, and a total conversion efficiency of 9.4%. These parameters are inherently linked to the diamond membrane PIM structure that allows full device depletion even at 0 V and are among the highest reported up to now for any other material tested for betavoltaic devices. It enables to drive a high short-circuit current Isc up to 7.12 μA, to reach a maximum power Pmax of 10.48 μW, a remarkable value demonstrating the high-benefit of diamond for the realization of long-life radioisotope based micro-batteries.

High-efficiency thin-film GaAs solar cells, phase2

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.

1981-01-01

Thin GaAs epi-layers with good crystallographic quality were grown using a (100) Si-substrate on which a thin Ge epi-interlayer was grown by CVD from germane. Both antireflection-coated metal oxide semiconductor (AMOS) and n(+)/p homojunction structures were studied. The AMOS cells were fabricated on undoped-GaAs epi-layers deposited on bulk poly-Ge substrates using organo-metallic CVD film-growth, with the best achieved AM1 conversion efficiency being 9.1%. Both p-type and n(+)-type GaAs growth were optimized using 50 ppm dimethyl zinc and 1% hydrogen sulfide, respectively. A direct GaAs deposition method in fabricating ultra-thin top layer, epitaxial n(+)/p shallow homojunction solar cells on (100) GaAs substrates (without anodic thinning) was developed to produce large area (1 sq/cm) cells, with 19.4% AM1 conversion efficiency achieved. Additionally, an AM1 conversion efficiency of 18.4% (17.5% with 5% grid coverage) was achieved for a single crystal GaAs n(+)/p cell grown by OM-CVD on a Ge wafer.

Study of the effects of focused high-energy boron ion implantation in diamond

NASA Astrophysics Data System (ADS)

Ynsa, M. D.; Agulló-Rueda, F.; Gordillo, N.; Maira, A.; Moreno-Cerrada, D.; Ramos, M. A.

2017-08-01

Boron-doped diamond is a material with a great technological and industrial interest because of its exceptional chemical, physical and structural properties. At modest boron concentrations, insulating diamond becomes a p-type semiconductor and at higher concentrations a superconducting metal at low temperature. The most conventional preparation method used so far, has been the homogeneous incorporation of boron doping during the diamond synthesis carried out either with high-pressure sintering of crystals or by chemical vapour deposition (CVD) of films. With these methods, high boron concentration can be included without distorting significantly the diamond crystalline lattice. However, it is complicated to manufacture boron-doped microstructures. A promising alternative to produce such microstructures could be the implantation of focused high-energy boron ions, although boron fluences are limited by the damage produced in diamond. In this work, the effect of focused high-energy boron ion implantation in single crystals of diamond is studied under different irradiation fluences and conditions. Micro-Raman spectra of the sample were measured before and after annealing at 1000 °C as a function of irradiation fluence, for both superficial and buried boron implantation, to assess the changes in the diamond lattice by the creation of vacancies and defects and their degree of recovery after annealing.

Diamond growth on copper rods from polymer composite nanofibres

NASA Astrophysics Data System (ADS)

Varga, M.; Potocky, S.; Tesarek, P.; Babchenko, O.; Davydova, M.; Kromka, A.

2014-09-01

The potential uses of diamond films can be found in a diverse range of industrial applications. However, deposition of diamond films onto some foreign materials is still not a simple task. Here we present the growth of adherent diamond films on copper rods with the focus on substrate pre-treatment by polyvinyl alcohol composite nanofibres. The primary role of the polymer fibres substantially act as a carbon source which enhances the diamond nucleation and accelerates a homogenous CVD growth. Diamond growth was carried out in pulsed linear antenna microwave chemical vapour deposition system, which is characterized by cold plasma due to larger distance of hot plasma region from the substrate, at various gas compositions. The large distance between plasma source and the substrate holder also allows the uniform deposition of diamond on a large number of substrates with complex geometry (3D objects) as well as for the vertically positioned substrates. Moreover, the inhomogeneity in diamond film thickness deposited on vertically positioned substrates was suppressed by using polyvinyl alcohol nanofibre textile. Combination of PVA polymer fibres use together with this unique deposition system leads to a successful overcoating of the copper rods by continuous diamond film without the film cracking or delamination. We propose that the sequence of plasma-chemical reactions enhances the transformation of certain number of carbon atoms into the sp3-bonded form which further are stabilized by atomic hydrogen coming from plasma.

Performance evaluation of different diamond-like carbon samples as charge state conversion surfaces for neutral atom imaging detectors in space applications

NASA Astrophysics Data System (ADS)

Brigitte Neuland, Maike; Allenbach, Marc; Föhn, Martina; Wurz, Peter

2017-04-01

The detection of energetic neutral atoms is a substantial requirement on every space mission mapping particle populations of a planetary magnetosphere or plasma of the interstellar medium. For imaging neutrals, these first have to be ionised. Regarding the constraints of weight, volume and power consumption, the technique of surface ionisation complies with all specifications of a space mission. Particularly low energy neutral atoms, which cannot be ionised by passing through a foil, are ionised by scattering on a charge state conversion surface [1]. Since more than 30 years intense research work is done to find and optimise suitable materials for use as charge state conversion surfaces for space application. Crucial parameters are the ionisation efficiency of the surface material and the scattering properties. Regarding these parameters, diamond-like carbon was proven advantageously: While efficiently ionising incoming neutral atoms, diamond stands out by its durability and chemical inertness [2]. In the IBEX-Lo sensor, a diamond-like carbon surface is used for ionisation of neutral atoms. Building on the successes of the IBEX mission [3], the follow up mission IMAP (InterstellarMApping Probe) will take up to further explore the boundaries of the heliosphere. The IMAP mission is planned to map neutral atoms in a larger energy range and with a distinct better angular resolution and sensitivity than IBEX [4]. The aspired performance of the IMAP sensors implies also for charge state conversion surfaces with improved characteristics. We investigated samples of diamond-like carbon, manufactured by the chemical vapour deposition (CVD) method, regarding their ionisation efficiency, scattering and reflexion properties. Experiments were carried out at the ILENA facility at the University of Bern [5] with hydrogen and oxygen atoms, which are the species of main interest in magnetospheric research [1]. We compare the results of earlier investigations of a metallised CVD sample [6] to our latest measurements of a Boron-doped CVD diamond sample. We additionally measured the B-concentration in the sample to prove our predictions of the B-concentration needed to reach sufficient conductibility for the sample not getting electrostatically charged during instrument operation. The results of narrower scattering cones and higher ionisation efficiency show that diamond-like carbon still is the preferred material for charge state conversion surfaces and that new surface technologies offer improved diamond conversion surfaces with different properties and hence the possibility for improvement of the performance of neutral atom imaging instruments. References: [1] P. Wurz, Detection of Energetic Neutral Atoms, in The Outer Heliosphere: Beyond the Planets, Copernicus Gesellschaft e.V., Katlenburg-Lindau, Germany, 2000, p. 251-288. [2] P. Wurz, R. Schletti, M.R. Aellig, Surf. Sci. 373(1997), 56-66. [3] D.J. McComas et al., Geophys. Res. Lett. 38(2011), L18101. [4] N.A. Schwadron et al., J. of Phys.. Conf. Series 767(2016): 012025 [5] P. Wahlström, J.A. Scheer, A. Riedo, P. Wurz and M. Wieser, J. Spacecr. Rockets 50 (2013): 402-410. [6] M.B. Neuland, J.A. Scheer, A. Riedo and P. Wurz, Appl. Surf. Sci. 313(2014):293-303.

Coaxial CVD diamond detector for neutron diagnostics at ShenGuang III laser facility.

PubMed

Yu, Bo; Liu, Shenye; Chen, Zhongjing; Huang, Tianxuan; Jiang, Wei; Chen, Bolun; Pu, Yudong; Yan, Ji; Zhang, Xing; Song, Zifeng; Tang, Qi; Hou, Lifei; Ding, Yongkun; Zheng, Jian

2017-06-01

A coaxial, high performance diamond detector has been developed for neutron diagnostics of inertial confinement fusion at ShenGuangIII laser facility. A Φ10 mm × 1 mm "optical grade" chemical-vapor deposition diamond wafer is assembled in coaxial-designing housing, and the signal is linked to a SubMiniature A connector by the cathode cone. The coaxial diamond detector performs excellently for neutron measurement with the full width at half maximum of response time to be 444 ps for a 50 Ω measurement system. The average sensitivity is 0.677 μV ns/n for 14 MeV (DT fusion) neutrons at an electric field of 1000 V/mm, and the linear dynamic range is beyond three orders of magnitude. The ion temperature results fluctuate widely from the neutron time-of-flight scintillator detector results because of the short flight length. These characteristics of small size, large linear dynamic range, and insensitive to x-ray make the diamond detector suitable to measure the neutron yield, ion temperature, and neutron emission time.

The 13C(n,α0)10Be cross section at 14.3 MeV and 17 MeV neutron energy

NASA Astrophysics Data System (ADS)

Kavrigin, P.; Belloni, F.; Frais-Koelbl, H.; Griesmayer, E.; Plompen, A. J. M.; Schillebeeckx, P.; Weiss, C.

2017-09-01

At nuclear fusion reactors, CVD diamond detectors are considered an advantageous solution for neutron flux monitoring. For such applications the knowledge of the cross section of neutron-induced nuclear reactions on natural carbon are of high importance. Especially the (n,α0) reactions, yielding the highest energy reaction products, are of relevance as they can be clearly distinguished in the spectrum. The 13C(n,α0)10Be cross section was measured relative to 12C(n,α0)9Be at the Van de Graaff facility of EC-JRC Geel, Belgium, at 14.3 MeV and 17.0 MeV neutron energies. The measurement was performed with an sCVD (single-crystal Chemical Vapor Deposition) diamond detector, where the detector material acted simultaneously as sample and as sensor. A novel data analysis technique, based on pulse-shape discrimination, allowed an efficient reduction of background events. The results of the measurement are presented and compared to previously published values for this cross-section.

Preface

NASA Astrophysics Data System (ADS)

Jackman, R. B.

2003-03-01

It is not an exaggeration to say that over the past forty years solid-state electronic devices have revolutionized working practices and the way leisure time is spent. The semiconductor at the heart of the vast majority of these electronic devices is silicon. Predictions that new semiconductors will be required to enable the pace of the electronics revolution to be kept at its present level are regularly made, but silicon device engineers just keep coming up with ways to make silicon devices better and better. It is the year 1990, and reliable chemical vapour deposition (CVD) techniques for the formation of large area films of diamond have been demonstrated in a number of research laboratories around the world. The first major international conferences on the growth, properties and potential applications for diamond, now available in a form useful to device engineers for the first time, have taken place. A survey of the basic properties of diamond suggests that it is an ideal material for electronics. It has a wide bandgap (5.5 eV, indirect), high saturated carrier velocities and carrier mobilities (and electrons and holes have similar values), a high electric field breakdown strength, low dielectric constant, high thermal conductivity and high visible-infrared radiation transparency. Many potential applications can, and have been proposed, including high power and high frequency electronic devices. When the resilience of diamond to high levels of radiation or heat, and the prospect of a negative electron affinity surface are also considered, many more applications come to mind such as high temperature or radiation hard electronics, radiation detectors, optoelectronic devices and cold cathodes. At this time, diamond films grown on non-diamond substrates are polycrystalline, and highly defective, but high purity single crystal material is considered `just around the corner'. There is even a naturally occurring dopant, boron, to enable p-type diamond to be produced and surely it is only a matter of months before n-type material is realized. Researchers can be found talking to the media about future computers that will have within them semiconducting chips made of diamond early in the new century. Let us now move to the present, the year 2003. Diamond films grown on non-diamond substrates are still polycrystalline, although far less defective. Single crystal material is available, but not in large areas since it is produced through the homoepitaxial growth of a high purity layer on a (relatively) cheap, but small, substrate. The only dopant that all laboratories can master is still boron, but at least three labs have reliably generated n-type conductivity through the incorporation of phosphorus, although the donor level formed is deep at around 0.6 eV (nor is boron shallow, forming an acceptor level at 0.37 eV). There are no mass market active diamond electronic devices for sale, and certainly no computers with diamond-based chips at their heart. Why? Well perhaps the early predictions were simply too ambitious. Ten or so years is not a long time in terms of the development of a new semiconductor. Also the predictors were far too ready to dismiss silicon. This article is being written on a Macintosh laptop computer, whose base can get too hot for the lap after prolonged use! Silicon for high temperature electronics? Well yes, if you introduce silicon-on-insulator (SOI) technology as Motorola have done. The level of investment required for even the most basic semiconductor fabrication facility is measured in billions of US dollars. New semiconductors will not be used within mass production environments unless they offer not just incremental improvements, but major steps forward, and do so reliably. It can be argued that it was the need for microwave devices that emerged with modern communications that gave III-V semiconductors their breakthrough, not the prospect of an improved computer. In this new century those working in the field of diamond electronics have become more realistic in their ambitions, and with this realism have come many successes, even though they are on a smaller scale than originally predicted. You can buy active electronic devices based upon CVD diamond, but they are aimed at niche markets. For this reason, many of the multi-national companies no longer support programmes in diamond electronics, but in their place are plenty of medium and small enterprises for whom niche markets are just fine. Optoelectronic devices and radiation detectors, in particular, have been produced with performance levels that are commercially useful. For example, aspects of my own work at UCL have led to the commercial introduction of deep UV diamond-based photodetectors, and CEA in Paris have introduced a range of radiation detectors that are being purchased for use within the nuclear industry. This is not to say that mass market applications for diamond will not emerge, it is simply that if they do they are likely to be where diamond enables a new technology, not an incremental improvement to an existing one. Perhaps the exciting new topic of quantum computing could be just such a technology in 10-20 years time. Equally exciting is the integration of electronics with biological materials, and nano-biotechnology could perhaps be a major application area for diamond-based devices in the future. All future developments of diamond electronics will be underpinned by fundamental insight into the way that the diamond grows, its properties and the physics controlling the operation of device structures. Whilst many CVD methods have been used to grow diamond, micowave plasma enhanced CVD has proved to be the most effective for the growth of high purity material. Until recently growth rates were limited to around 1 µm h-1, making the material fairly costly to produce. This can now be increased to beyond 50 µm h-1 making even the highest quality diamond substrates commercially accessible for many applications. The electronic properties of the material have also been improving dramatically over the last few months, such that it is possible to produce CVD material with carrier mobilities that surpass the best natural diamonds (see for example, Science (2002) 297 1670). This special issue of Semiconductor Science and Technology is dedicated to surveying recent developments in diamond electronics that are being enabled by these improvements in growth. Most of this special issue addresses crystalline diamond. However, two articles have been included on diamond-like carbon (DLC), to give the reader some insight into the properties and applications of this related, but different, material. In fact DLC is not a single material, but is a fully constrained network of sp2 and sp3 carbon (sometimes with hydrogen), where the sp2 and sp3 ratio, and hence the materials properties, can be varied. The issue begins with an article on the electronic properties of diamond; doping diamond is then considered. The fascinating observation that hydrogen terminated diamond surfaces display p-type conductivity is then discussed, followed by some diamond processing issues and electronic device fabrication. Papers on properties and applications follow. At the end of the issue are two largely theoretical papers submitted by Johann Prins. These papers are thought provoking, but make some very controversial claims. They are included here so that the reader can consider the approach developed within these two associated papers, perhaps thinking how this impacts upon their own work, even if the end conclusions remain open to debate. Indeed, it is hoped that this debate will be opened up through their publication, enabling this area of thought to be more widely explored and critically examined. Optical picture of a homoepitaxial film Figure 1. Optical picture of a homoepitaxial film grown at a rate of more than 50 µm h-1. Figure 1 is an optical picture of a homoepitaxial film grown in my laboratories at UCL at a rate of more than 50 µm h-1. It is included for no scientific or technical reason, nor is it our best layer. It is simply included as a beautiful picture, and to remind us that not all good things have to be for a commercial application! It has been a pleasure working with the authors and IOPP in bringing together this special issue. I hope you, the reader, find it useful.

Single crystal CVD diamond membranes for betavoltaic cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delfaure, C.; Pomorski, M., E-mail: michal.pomorski@cea.fr; Sanoit, J. de

2016-06-20

A single crystal diamond large area thin membrane was assembled as a p-doped/Intrinsic/Metal (PIM) structure and used in a betavoltaic configuration. When tested with a 20 keV electron beam from a high resolution scanning electron microscope, we measured an open circuit voltage (V{sub oc}) of 1.85 V, a charge collection efficiency (CCE) of 98%, a fill-factor of 80%, and a total conversion efficiency of 9.4%. These parameters are inherently linked to the diamond membrane PIM structure that allows full device depletion even at 0 V and are among the highest reported up to now for any other material tested for betavoltaic devices. Itmore » enables to drive a high short-circuit current I{sub sc} up to 7.12 μA, to reach a maximum power P{sub max} of 10.48 μW, a remarkable value demonstrating the high-benefit of diamond for the realization of long-life radioisotope based micro-batteries.« less

Pressure, stress, and strain distribution in the double-stage diamond anvil cell

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lobanov, Sergey S., E-mail: slobanov@carnegiescience.edu; V.S. Sobolev Institute of Geology and Mineralogy SB RAS, Novosibirsk 630090; Prakapenka, Vitali B.

Double stage diamond anvil cells (DACs) of two designs have been assembled and tested. We used a standard symmetric DAC with flat or beveled culets as a primary stage and CVD microanvils machined by a focused ion beam as a second. We evaluated pressure, stress, and strain distributions in gold and a mixture of gold and iron as well as in secondary anvils using synchrotron x-ray diffraction with a micro-focused beam. A maximum pressure of 240 GPa was reached independent of the first stage anvil culet size. We found that the stress field generated by the second stage anvils is typicalmore » of conventional DAC experiments. The maximum pressures reached are limited by strains developing in the secondary anvil and by cupping of the first stage diamond anvil in the presented experimental designs. Also, our experiments show that pressures of several megabars may be reached without sacrificing the first stage diamond anvils.« less

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti-6Al-4V Alloy Substrates.

PubMed

Samudrala, Gopi K; Vohra, Yogesh K; Walock, Michael J; Miles, Robin

2014-01-13

Nanostructured diamond (NSD) films were grown on silicon and Ti-6Al-4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 µm/h on silicon, and 4 µm/h on Ti-6Al-4V were achieved. In a chemistry of H₂/CH₄/N₂, varying ratios of CH₄/H₂ and N₂/CH₄ were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N₂/CH₄ ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp³ bonded carbon.

VOx effectively doping CVD-graphene for transparent conductive films

NASA Astrophysics Data System (ADS)

Ji, Qinghua; Shi, Liangjing; Zhang, Qinghong; Wang, Weiqi; Zheng, Huifeng; Zhang, Yuzhi; Liu, Yangqiao; Sun, Jing

2016-11-01

Chemical vapor deposition(CVD)-synthesized graphene is potentially an alternative for tin-doped indium oxide (ITO) transparent conductive films (TCFs), however its sheet resistance is still too high to meet many demands. Vanadium oxide has been widely applied as smart window materials, however, no study has been reported to use it as dopant to improve the conductivity of graphene TCFs. In this study, we firstly reported that VOx doping can effectively lower the sheet resistance of CVD-graphene films while keeping its good optical properties, whose transmittance is as high as 86-90%. The optimized VOx-doped graphene exhibits a sheet resistance as low as 176 Ω/□, which decreases by 56% compared to the undoped graphene films. The doping process is convenient, stable, economical and easy to operate. What is more, VOx can effectively increase the work function(WF) of the film, making it more appropriate for use in solar cells. The evolution of the VOx species annealed at different temperatures below 400 °C has been detailed studied for the first time, based on which the doping mechanism is proposed. The prepared VOx doped graphene is expected to be a promising candidate for transparent conductive film purposes.

Novel diamond cells for neutron diffraction using multi-carat CVD anvils.

PubMed

Boehler, R; Molaison, J J; Haberl, B

2017-08-01

Traditionally, neutron diffraction at high pressure has been severely limited in pressure because low neutron flux required large sample volumes and therefore large volume presses. At the high-flux Spallation Neutron Source at the Oak Ridge National Laboratory, we have developed new, large-volume diamond anvil cells for neutron diffraction. The main features of these cells are multi-carat, single crystal chemical vapor deposition diamonds, very large diffraction apertures, and gas membranes to accommodate pressure stability, especially upon cooling. A new cell has been tested for diffraction up to 40 GPa with an unprecedented sample volume of ∼0.15 mm 3 . High quality spectra were obtained in 1 h for crystalline Ni and in ∼8 h for disordered glassy carbon. These new techniques will open the way for routine megabar neutron diffraction experiments.

Atomic composition and electrical characteristics of epitaxial CVD diamond layers doped with boron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surovegina, E. A., E-mail: suroveginaka@ipmras.ru; Demidov, E. V.; Drozdov, M. N.

2016-12-15

The results of analysis of the atomic composition, doping level, and hole mobility in epitaxial diamond layers when doped with boron are reported. The layers are produced by chemical-vapor deposition. The possibilities of uniform doping with boron to a level in the range 5 × 10{sup 17} to ~10{sup 20} at cm{sup –3} and of δ doping to the surface concentration (0.3–5) × 10{sup 13} at cm{sup –3} are shown. The conditions for precision ion etching of the structures are determined, and barrier and ohmic contacts to the layers are formed.

High-power single-pass pumped diamond Raman oscillator

NASA Astrophysics Data System (ADS)

Heinzig, Matthias; Walbaum, Till; Williams, Robert J.; Kitzler, Ondrej; Mildren, Richard P.; Schreiber, Thomas; Eberhardt, Ramona; Tünnermann, Andreas

2018-02-01

We present our recent advances on power scaling of a high-power single-pass pumped CVD-diamond Raman oscillator at 1.2 μm. The single pass scheme reduced feedback to the high gain fiber amplifier, which pumps the oscillator. The Yb-doped multi-stage fiber amplifier itself enables up to 1 kW output power at a narrow linewidth of 0.16 nm. We operate this laser in quasi-cw mode at 10% duty cycle and on-time (pulse) duration of 10 ms. With a maximum conversion efficiency of 39%, a maximum steady-state output power of 380 W and diffraction limited beam quality was achieved.

Critical Assessment of Optical Properties of CVD Diamond Films

DTIC Science & Technology

1991-04-12

electron has a different momentum at the bottom of the conduction band than at the top of the valence band. Because the photon momentum is very small , a...3622 (1971). 3 J.L. Warren, J.L. Yarnell, G. Dolling, and R.A. Cowley, Phys. Rev. 158, 805-808 (1967). 4 S. Musikant , Optical Materials (Marcel Dekker

Response measurement of single-crystal chemical vapor deposition diamond radiation detector for intense X-rays aiming at neutron bang-time and neutron burn-history measurement on an inertial confinement fusion with fast ignition.

PubMed

Shimaoka, T; Kaneko, J H; Arikawa, Y; Isobe, M; Sato, Y; Tsubota, M; Nagai, T; Kojima, S; Abe, Y; Sakata, S; Fujioka, S; Nakai, M; Shiraga, H; Azechi, H; Chayahara, A; Umezawa, H; Shikata, S

2015-05-01

A neutron bang time and burn history monitor in inertial confinement fusion with fast ignition are necessary for plasma diagnostics. In the FIREX project, however, no detector attained those capabilities because high-intensity X-rays accompanied fast electrons used for plasma heating. To solve this problem, single-crystal CVD diamond was grown and fabricated into a radiation detector. The detector, which had excellent charge transportation property, was tested to obtain a response function for intense X-rays. The applicability for neutron bang time and burn history monitor was verified experimentally. Charge collection efficiency of 99.5% ± 0.8% and 97.1% ± 1.4% for holes and electrons were obtained using 5.486 MeV alpha particles. The drift velocity at electric field which saturates charge collection efficiency was 1.1 ± 0.4 × 10(7) cm/s and 1.0 ± 0.3 × 10(7) cm/s for holes and electrons. Fast response of several ns pulse width for intense X-ray was obtained at the GEKKO XII experiment, which is sufficiently fast for ToF measurements to obtain a neutron signal separately from X-rays. Based on these results, we confirmed that the single-crystal CVD diamond detector obtained neutron signal with good S/N under ion temperature 0.5-1 keV and neutron yield of more than 10(9) neutrons/shot.

Stress engineering of high-quality single crystal diamond by heteroepitaxial lateral overgrowth

DOE PAGES

Tang, Y. -H.; Golding, B.

2016-02-02

Here, we describe a method for lateral overgrowth of low-stress single crystal diamond by chemical vapor deposition (CVD). The process is initiated by deposition of a thin (550 nm) (001) diamond layer on Ir-buffered a-plane sapphire. The diamond is partially masked by periodic thermally evaporated Au stripes using photolithography. Lateral overgrowth of the Au occurs with extremely effective filtering of threading dislocations. Thermal stress resulting from mismatch of the low thermal expansion diamond and the sapphire substrate is largely accommodated by the ductile Au layer. The stress state of the diamond is investigated by Raman spectroscopy for two thicknesses: atmore » 10 μm where the film has just overgrown the Au mask and at 180 μm where the film thickness greatly exceeds the scale of the masking. For the 10-μm film, the Raman linewidth shows spatial oscillations with the period of the Au stripes with a factor of 2 to 3 reduction relative to the unmasked region. In a 180-μm thick diamond film, the overall surface stress was extremely low, 0.00 ± 0.16 GPa, obtained from the Raman shift averaged over the 7.5mm diameter of the crystal at its surface. We conclude that the metal mask protects the overgrown diamond layer from substrate-induced thermal stress and cracking. Lastly, it is also responsible for low internal stress by reducing dislocation density by several orders of magnitude.« less

Investigation of 3D diamond detector dosimetric characteristics

NASA Astrophysics Data System (ADS)

Kanxheri, K.; Alunni Solestizi, L.; Biasini, M.; Caprai, M.; Dipilato, A. C.; Iacco, M.; Ionica, M.; Lagomarsino, S.; Menichelli, M.; Morozzi, A.; Passeri, D.; Sciortino, S.; Talamonti, C.; Zucchetti, C.; Servoli, L.

2018-06-01

Recently, a polycrystalline chemical vapor deposited (pCVD) 3D diamond detector with graphitic in bulk electrodes, fabricated using a pulsed laser technique has been evaluated for photon beam radiation dosimetry during in-air exposure. The same 3D diamond detector, has now been investigated to evaluate its performance under clinically relevant conditions putting the detector inside a Polymethylmethacrylate (PMMA) phantom, to obtain higher precision dosimetric measurements. The detector leakage current was of the order of ± 25 pA or less for bias voltages up to ‑100 V. The 3D detector was tested for time stability and repeatability showing excellent performance with less than 0.6% signal variation. It also showed a linear response for low dose rates with a deviation from linearity of 2%. It was also possible to verify the detector response as a function of the depth in PMMA up to 18 cm.

Novel diamond cells for neutron diffraction using multi-carat CVD anvils

DOE PAGES

Boehler, R.; Molaison, J. J.; Haberl, B.

2017-08-17

Traditionally, neutron diffraction at high pressure has been severely limited in pressure because low neutron flux required large sample volumes and therefore large volume presses. At the high-flux Spallation Neutron Source at the Oak Ridge National Laboratory, we have developed in this paper new, large-volume diamond anvil cells for neutron diffraction. The main features of these cells are multi-carat, single crystal chemical vapor deposition diamonds, very large diffraction apertures, and gas membranes to accommodate pressure stability, especially upon cooling. A new cell has been tested for diffraction up to 40 GPa with an unprecedented sample volume of ~0.15 mm 3.more » High quality spectra were obtained in 1 h for crystalline Ni and in ~8 h for disordered glassy carbon. Finally, these new techniques will open the way for routine megabar neutron diffraction experiments.« less

Domestic and Industrial Water Disinfection Using Boron-Doped Diamond Electrodes

NASA Astrophysics Data System (ADS)

Rychen, Philippe; Provent, Christophe; Pupunat, Laurent; Hermant, Nicolas

This chapter first describes main properties and manufacturing process (production using HF-CVD, quality-control measurements, etc.) of diamond electrodes and more specifically boron-doped diamond (BDD) electrodes. Their exceptional properties make such electrodes particularly suited for many disinfection applications as thanks to their wide working potential window and their high anodic potential, they allow generating a mixture of powerful oxidizing species mainly based on active oxygen and peroxides. Such mixture of disinfecting agents is far more efficient than conventional chemical or physical known techniques. Their efficiency was tested against numerous microorganisms and then proved to be greater than conventional methods. All bacteria and viruses tested up to date were inactivated 3-5 times faster with a treatment based on with BDD electrodes and the DiaCellⓇ technology than with other techniques. Several applications, either industrial or private (wellness and home use), are discussed with a focus on the dedicated products and the main technology advantages.

Nature and origin of interstellar diamond from the Allende CV3 meteorite

NASA Technical Reports Server (NTRS)

Blake, David; Freund, Friedemann; Bunch, Ted; Krishnan, Kannan; Stampfer, Mitch; Chang, Sherwood; Tielens, Alexander G. G. M.

1990-01-01

Data and experimental evidence which support the contention that the C delta diamonds may result from grain-grain collisions in supernova shocks in the interstellar medium are presented. Fragments of the Allende CV3 chondrite were acid-treated. A whitish powder was obtained. For the Analytical Electron Microscopy (AEM) a small drop of ethanol suspension was transferred onto holey carbon support films on 3 mm EM grids. The AEM was performed on transmission-thin fragments of the material which overlay holes in the film, to eliminate interference from the substrate. Electron Spectroscopy for Chemical Analysis (ESCA) was performed on a large aliquot of C. Diamond was identified by selected area electron diffraction. Scanning Transmission Electron Microscope / Energy Dispersive X-ray (STEM-EDS) microanalyses of the C delta diamond, using a light-element detector, show that oxygen and possibly nitrogen are the only impurities consistently present. ESCA spectra from bulk C delta material confirm the presence of N at a level of 0.35 percent or less. Under UV irradiation a yellow-red fluorescence is observed, consistent with that of natural diamonds containing substitutional N. Electron Energy Loss Spectra (EELS) were recorded at 2 eV resolution from the C delta diamond, high pressure synthetic diamond, a diamond film produced in a low pressure plasma by chemical vapor deposition (CVD) on a heated silicon substrate (Roy, 1987), graphite, and amorphous arc sputtered carbon. Comparison of the carbon K edge shape and fine structure shows the Allende C delta phase to be largely diamond, but with a significant pre-edge absorption feature indicative of transitions of C 1s electrons into pi asterisk orbitals which are absent in the purely sp(3)-bonded diamond but present in graphite and amorphous carbon.

Mechanism-Based FE Simulation of Tool Wear in Diamond Drilling of SiCp/Al Composites.

PubMed

Xiang, Junfeng; Pang, Siqin; Xie, Lijing; Gao, Feinong; Hu, Xin; Yi, Jie; Hu, Fang

2018-02-07

The aim of this work is to analyze the micro mechanisms underlying the wear of macroscale tools during diamond machining of SiC p /Al6063 composites and to develop the mechanism-based diamond wear model in relation to the dominant wear behaviors. During drilling, high volume fraction SiC p /Al6063 composites containing Cu, the dominant wear mechanisms of diamond tool involve thermodynamically activated physicochemical wear due to diamond-graphite transformation catalyzed by Cu in air atmosphere and mechanically driven abrasive wear due to high-frequency scrape of hard SiC reinforcement on tool surface. An analytical diamond wear model, coupling Usui abrasive wear model and Arrhenius extended graphitization wear model was proposed and implemented through a user-defined subroutine for tool wear estimates. Tool wear estimate in diamond drilling of SiC p /Al6063 composites was achieved by incorporating the combined abrasive-chemical tool wear subroutine into the coupled thermomechanical FE model of 3D drilling. The developed drilling FE model for reproducing diamond tool wear was validated for feasibility and reliability by comparing numerically simulated tool wear morphology and experimentally observed results after drilling a hole using brazed polycrystalline diamond (PCD) and chemical vapor deposition (CVD) diamond coated tools. A fairly good agreement of experimental and simulated results in cutting forces, chip and tool wear morphologies demonstrates that the developed 3D drilling FE model, combined with a subroutine for diamond tool wear estimate can provide a more accurate analysis not only in cutting forces and chip shape but also in tool wear behavior during drilling SiC p /Al6063 composites. Once validated and calibrated, the developed diamond tool wear model in conjunction with other machining FE models can be easily extended to the investigation of tool wear evolution with various diamond tool geometries and other machining processes in cutting different workpiece materials.

Mechanism-Based FE Simulation of Tool Wear in Diamond Drilling of SiCp/Al Composites

PubMed Central

Xiang, Junfeng; Pang, Siqin; Xie, Lijing; Gao, Feinong; Hu, Xin; Yi, Jie; Hu, Fang

2018-01-01

The aim of this work is to analyze the micro mechanisms underlying the wear of macroscale tools during diamond machining of SiCp/Al6063 composites and to develop the mechanism-based diamond wear model in relation to the dominant wear behaviors. During drilling, high volume fraction SiCp/Al6063 composites containing Cu, the dominant wear mechanisms of diamond tool involve thermodynamically activated physicochemical wear due to diamond-graphite transformation catalyzed by Cu in air atmosphere and mechanically driven abrasive wear due to high-frequency scrape of hard SiC reinforcement on tool surface. An analytical diamond wear model, coupling Usui abrasive wear model and Arrhenius extended graphitization wear model was proposed and implemented through a user-defined subroutine for tool wear estimates. Tool wear estimate in diamond drilling of SiCp/Al6063 composites was achieved by incorporating the combined abrasive-chemical tool wear subroutine into the coupled thermomechanical FE model of 3D drilling. The developed drilling FE model for reproducing diamond tool wear was validated for feasibility and reliability by comparing numerically simulated tool wear morphology and experimentally observed results after drilling a hole using brazed polycrystalline diamond (PCD) and chemical vapor deposition (CVD) diamond coated tools. A fairly good agreement of experimental and simulated results in cutting forces, chip and tool wear morphologies demonstrates that the developed 3D drilling FE model, combined with a subroutine for diamond tool wear estimate can provide a more accurate analysis not only in cutting forces and chip shape but also in tool wear behavior during drilling SiCp/Al6063 composites. Once validated and calibrated, the developed diamond tool wear model in conjunction with other machining FE models can be easily extended to the investigation of tool wear evolution with various diamond tool geometries and other machining processes in cutting different workpiece materials. PMID:29414839

Luminescence and conductivity studies on CVD diamond exposed to UV light

NASA Astrophysics Data System (ADS)

Bizzarri, A.; Bogani, F.; Bruzzi, M.; Sciortino, S.

1999-04-01

The photoluminescence (PL), thermoluminescence (TL) and thermally stimulated currents (TSC) of four high-quality CVD diamond films have been investigated in the range of temperatures between 300 and 700 K. The sample excitation has been carried out by means of an UV xenon lamp and UV laser lines. The features of the signals have been found equal to those obtained from particle excitation. The TL analysis shows the existence of several deep traps with activation energies between 0.6 and 1.0 eV. The contribution to the TL signal from different traps has been singled out by means of successive annealing processes. The TL results are in good agreement with those obtained from TSC measurements. The combined use of the two techniques allows a precise determination of the trap parameters. The spectral content of the TL response has also been compared with the PL signal in order to investigate the recombination process. This analysis shows that, in this temperature range, the TL signal is likely due to recombination from bound states rather than due to radiative free to bound transitions, as generally assumed in TL theory. The TSC signal is likely to arise from impurity band rather than from free carriers conduction.

Rapid Growth of Nanostructured Diamond Film on Silicon and Ti–6Al–4V Alloy Substrates

PubMed Central

Samudrala, Gopi K.; Vohra, Yogesh K.; Walock, Michael J.; Miles, Robin

2014-01-01

Nanostructured diamond (NSD) films were grown on silicon and Ti–6Al–4V alloy substrates by microwave plasma chemical vapor deposition (MPCVD). NSD Growth rates of 5 μm/h on silicon, and 4 μm/h on Ti–6Al–4V were achieved. In a chemistry of H2/CH4/N2, varying ratios of CH4/H2 and N2/CH4 were employed in this research and their effect on the resulting diamond films were studied by X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, and atomic force microscopy. As a result of modifying the stock cooling stage of CVD system, we were able to utilize plasma with high power densities in our NSD growth experiments, enabling us to achieve high growth rates. Substrate temperature and N2/CH4 ratio have been found to be key factors in determining the diamond film quality. NSD films grown as part of this study were shown to contain 85% to 90% sp3 bonded carbon. PMID:28788461

NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya

2007-01-19

Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg. to 60 deg. . The peak intensity corresponding to the resonance transitionmore » of 1s{yields}{sigma}* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg. C to the FIB-CVD DLC annealed at 400 deg. C and decreased from that at 400 deg. C to that at 600 deg. C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg. C at the incident angle of 60 deg. . On the contrary, the peak intensity corresponding to the resonance transition of 1s{yields}{pi}* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg. C to that at 400 deg. C and increased from that at 400 deg. C to that at 600 deg. C. Gallium concentration in the FIB-CVD DLC decreased from {approx_equal}2.2% of the as-deposited FIB-CVD DLC to {approx_equal}1.5% of the FIB-CVD DLC annealed at 600 deg. C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg. C.« less

Trapezoidal diffraction grating beam splitters in single crystal diamond

NASA Astrophysics Data System (ADS)

Kiss, Marcell; Graziosi, Teodoro; Quack, Niels

2018-02-01

Single Crystal Diamond has been recognized as a prime material for optical components in high power applications due to low absorption and high thermal conductivity. However, diamond microstructuring remains challenging. Here, we report on the fabrication and characterization of optical diffraction gratings exhibiting a symmetric trapezoidal profile etched into a single crystal diamond substrate. The optimized grating geometry diffracts the transmitted optical power into precisely defined proportions, performing as an effective beam splitter. We fabricate our gratings in commercially available single crystal CVD diamond plates (2.6mm x 2.6mm x 0.3mm). Using a sputter deposited hard mask and patterning by contact lithography, the diamond is etched in an inductively coupled oxygen plasma with zero platen power. The etch process effectively reveals the characteristic {111} diamond crystal planes, creating a precisely defined angled (54.7°) profile. SEM and AFM measurements of the fabricated gratings evidence the trapezoidal shape with a pitch of 3.82μm, depth of 170 nm and duty cycle of 35.5%. Optical characterization is performed in transmission using a 650nm laser source perpendicular to the sample. The recorded transmitted optical power as function of detector rotation angle shows a distribution of 21.1% in the 0th order and 23.6% in each +/-1st order (16.1% reflected, 16.6% in higher orders). To our knowledge, this is the first demonstration of diffraction gratings with trapezoidal profile in single crystal diamond. The fabrication process will enable beam splitter gratings of custom defined optical power distribution profiles, while antireflection coatings can increase the efficiency.

Energy response of diamond sensor to beta radiation.

PubMed

Tchouaso, Modeste Tchakoua; Kasiwattanawut, Haruetai; Prelas, Mark A

2018-04-26

This paper demonstrates the ability of diamond sensors to respond to beta radiation. A Chemical Vapor Deposition (CVD) single crystal diamond was used in this work. The diamond crystal has a dimension of 4.5×4.5 by 0.5 mm thick. Metal contacts were fabricated on both sides of the diamond using titanium and palladium metals with thicknesses of 50 nm and 150 nm, respectively. The energy response of the diamond sensor was experimentally measured using three beta isotopes that cover the entire range of beta energy: 147 Pm, a weak beta radiation with a maximum energy of 0.225 MeV, 2 ° 4 Tl, a medium energy beta radiation with a maximum energy of 0.763 MeV, and 9 °Sr/ 9 °Y, with both a medium energy beta radiation with a maximum energy of 0.546 MeV, and a high energy beta radiation with a maximum energy of 2.274 MeV. The beta measurements indicate that diamond sensors are sensitive to beta radiation and are suitable for beta spectroscopy. This is important in estimating dose since diamond is tissue equivalent, and the absorbed dose is easily determined from the energy and the mass of the active volume. The high energy betas from 2 ° 4 Tl and 90 Sr/ 90 Y penetrates the sensor without depositing sufficient energy in the active area because their range is larger than the thickness of sensor. The sensitivity of the detector is limited because of its small volume and can be improved by combining smaller area sensors since growing large size diamond is currently a challenge. Copyright © 2018 Elsevier Ltd. All rights reserved.

Response measurement of single-crystal chemical vapor deposition diamond radiation detector for intense X-rays aiming at neutron bang-time and neutron burn-history measurement on an inertial confinement fusion with fast ignition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimaoka, T., E-mail: t.shimaoka@eng.hokudai.ac.jp; Kaneko, J. H.; Tsubota, M.

A neutron bang time and burn history monitor in inertial confinement fusion with fast ignition are necessary for plasma diagnostics. In the FIREX project, however, no detector attained those capabilities because high-intensity X-rays accompanied fast electrons used for plasma heating. To solve this problem, single-crystal CVD diamond was grown and fabricated into a radiation detector. The detector, which had excellent charge transportation property, was tested to obtain a response function for intense X-rays. The applicability for neutron bang time and burn history monitor was verified experimentally. Charge collection efficiency of 99.5% ± 0.8% and 97.1% ± 1.4% for holes andmore » electrons were obtained using 5.486 MeV alpha particles. The drift velocity at electric field which saturates charge collection efficiency was 1.1 ± 0.4 × 10{sup 7} cm/s and 1.0 ± 0.3 × 10{sup 7} cm/s for holes and electrons. Fast response of several ns pulse width for intense X-ray was obtained at the GEKKO XII experiment, which is sufficiently fast for ToF measurements to obtain a neutron signal separately from X-rays. Based on these results, we confirmed that the single-crystal CVD diamond detector obtained neutron signal with good S/N under ion temperature 0.5–1 keV and neutron yield of more than 10{sup 9} neutrons/shot.« less

Multilayered micro/nanocrystalline CVD diamond coatings for biotribology =

NASA Astrophysics Data System (ADS)

Salgueiredo, Ermelinda da Conceicao Portela

In the present work multilayered micro/nanocrystalline (MCD/NCD) diamond coatings were developed by Hot Filament Chemical Vapour Deposition (HFCVD). The aim was to minimize the surface roughness with a top NCD layer, to maximize adhesion onto the Si3N4 ceramic substrates with a starting MCD coating and to improve the mechanical resistance by the presence of MCD/NCD interfaces in these composite coatings. This set of features assures high wear resistance and low friction coefficients which, combined to diamond biocompatibility, set this material as ideal for biotribological applications. The deposition parameters of MCD were optimized using the Taguchi method, and two varieties of NCD were used: NCD-1, grown in a methane rich gas phase, and NCD-2 where a third gas, Argon, was added to the gas mixture. The best combination of surface pre-treatments in the Si3N4 substrates is obtained by polishing the substrates with a 15 mum diamond slurry, further dry etching with CF4 plasma for 10 minutes and final ultrasonic seeding in a diamond powder suspension in ethanol for 1 hour. The interfaces of the multilayered CVD diamond films were characterized with high detail using HRTEM, STEM-EDX and EELS. The results show that at the transition from MCD to NCD a thin precursor graphitic film is formed. On the contrary, the transition of the NCD to MCD grade is free of carbon structures other than diamond, as a result of the richer atomic hydrogen content and of the higher substrate temperature for MCD deposition. At those transitions, WC nanoparticles were found due to contamination from the filament, being also present at the first interface of the MCD layer with the silicon nitride substrate. In order to study the adhesion and mechanical resistance of the diamond coatings, indentation and particle jet blasting tests were conducted, as well as tribological experiments with homologous pairs. Indentation tests proved the superior behaviour of the multilayered coatings that attained a load of 800 N without delamination, when compared to the mono and bilayered ones. The multilayered diamond coatings also reveal the best solid particle erosion resistance, due to the MCD/NCD interfaces that act as crack deflectors. These results were confirmed by an analytical model on the stress field distribution based on the von Mises criterion. Regarding the tribological testing under dry sliding, multilayered coatings also exhibit the highest critical load values (200N for Multilayers with NCD-2). Low friction coefficient values in the range mu=0.02- 0.09 and wear coefficient values in the order of 10. -7 mm3 N-1 m-1 were obtained for the ball and flat specimensindicating a mild wear regime. Under lubrication with physiological fluids (HBSS e FBS), lower wear coefficient values 10. -9-10. -8 mm3 N-1 m-1) wereachieved, governed by the initial surface roughness and the effective contact pressure.

Electron-spectroscopy and -diffraction study of the conductivity of CVD diamond ( 0 0 1 )2×1 surface

NASA Astrophysics Data System (ADS)

Kono, S.; Takano, T.; Shimomura, M.; Goto, T.; Sato, K.; Abukawa, T.; Tachiki, M.; Kawarada, H.

2003-04-01

A chemical vapor deposition as-grown diamond (0 0 1) single-domain 2 × 1 surface was studied by electron-spectroscopy and electron-diffraction in ultrahigh vacuum (UHV). In order to change the surface conductivity (SC) of the diamond in UHV, three annealing stages were used; without annealing, annealing at 300 °C and annealing at 550 °C. From low energy electron diffraction and X-ray photoelectron spectroscopic (XPS) studies, an existence of SC was suggested for the first two stages of annealing and an absence of SC was suggested for the last stage of annealing. Changes in C KVV Auger electron spectroscopic spectra, C KVV Auger electron diffraction (AED) patterns and C 1s XPS peak positions were noticed between the annealing stages at 300 and 550 °C. These changes are interpreted as such that the state of hydrogen involvement in a subsurface of diamond (0 0 1)2 × 1 changes as SC changes. In particular, the presence of local disorder in diamond configuration in SC subsurface is pointed out from C KVV AED. From C 1s XPS peak shifts, a lower bound for the Fermi-level for SC layers from the valence band top is presented to be ˜0.5 eV.

Compositional and structural analysis of nitrogen incorporated and ion implanted diamond thin films

NASA Astrophysics Data System (ADS)

Garratt, Elias James

Significant progress in area of nano-structured thin film systems has taken place in recent decades. In particular, diamond thin film systems are being widely studied for their wear resistant, optical and electronic properties. Of the various methods researchers use to modify the structure of such films, three techniques in particular are of interest due to their versatility: modification of the growth atmosphere, growth on metalized substrates, providing an interfacial layer, and modification through post-growth ion implantation. The aim of this study is to investigate the effects each has to the structure and composition of elements. Different techniques are applied in each section; nitrogen gas dilution in a microwave plasma CVD system, diamond deposition on a metal interfacial layer and ion implantation in thin nanocrystalline diamond film. The forms of nanocrystalline diamond film resulting from such modifications are investigated using advanced spectroscopic and spectrometric techniques, as well as mechanical testing and surface mapping. The impact of these characterizations will provide valuable perspective to researchers in materials science. Understanding the changes to the structure and properties of this class of thin films, which can be induced through various mechanisms, will allow future researchers to refine these films towards technological applications in areas of hard coatings, electronics and photonics.

Deposition of dual-layer coating on Ti6Al4V

NASA Astrophysics Data System (ADS)

Hussain Din, Sajad; Shah, M. A.; Sheikh, N. A.

2017-03-01

Dual-layer diamond coatings were deposited on titanium alloy (Ti6Al4V) using a hot filament chemical vapour deposition technique with the anticipation of studying the structural and morphology properties of the alloy. The coated diamond films were characterized using scanning electron microscope, x-ray diffraction (XRD), and Raman spectroscopy. The XRD studies reveal that the deposited films are highly crystalline in nature, whereas morphological studies show that the films have a cauliflower structure. XRD analysis was used to calculate the structural parameters of the Ti6Al4V and CVD-coated Ti6Al4V. Raman spectroscopy was used to determine the nature and magnitude of the residual stress of the coatings.

Resonant third harmonic generation of KrF laser in Ar gas.

PubMed

Rakowski, R; Barna, A; Suta, T; Bohus, J; Földes, I B; Szatmári, S; Mikołajczyk, J; Bartnik, A; Fiedorowicz, H; Verona, C; Verona Rinati, G; Margarone, D; Nowak, T; Rosiński, M; Ryć, L

2014-12-01

Investigations of emission of harmonics from argon gas jet irradiated by 700 fs, 5 mJ pulses from a KrF laser are presented. Harmonics conversion was optimized by varying the experimental geometry and the nozzle size. For the collection of the harmonic radiation silicon and solar-blind diamond semiconductor detectors equipped with charge preamplifiers were applied. The possibility of using a single-crystal CVD diamond detector for separate measurement of the 3rd harmonic in the presence of a strong pumping radiation was explored. Our experiments show that the earlier suggested 0.7% conversion efficiency can really be obtained, but only in the case when phase matching is optimized with an elongated gas target length corresponding to the length of coherence.

The activation energy for nanocrystalline diamond films deposited from an Ar/H2/CH4 hot-filament reactor.

PubMed

Barbosa, D C; Melo, L L; Trava-Airoldi, V J; Corat, E J

2009-06-01

In this work we have investigated the effect of substrate temperature on the growth rate and properties of nanocrystalline diamond thin films deposited by hot filament chemical vapor deposition (HFCVD). Mixtures of 0.5 vol% CH4 and 25 vol% H2 balanced with Ar at a pressure of 50 Torr and typical deposition time of 12 h. We present the measurement of the activation energy by accurately controlling the substrate temperature independently of other CVD parameters. Growth rates have been measured in the temperature range from 550 to 800 degrees C. Characterization techniques have involved Raman spectroscopy, high resolution X-ray difractometry and scanning electron microscopy. We also present a comparison with most activation energy for micro and nanocrystalline diamond determinations in the literature and propose that there is a common trend in most observations. The result obtained can be an evidence that the growth mechanism of NCD in HFCVD reactors is very similar to MCD growth.

Soft x-ray measurements using photoconductive type-IIa and single-crystal chemical vapor deposited diamond detectors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moore, A. S.; Bentley, C. D.; Foster, J. M.

2008-10-15

Photoconductive detectors (PCDs) are routinely used alongside vacuum x-ray diodes (XRDs) to provide an alternative x-ray flux measurement at laser facilities such as HELEN at AWE Aldermaston, UK, and Omega at the Laboratory for Laser Energetics. To evaluate diamond PCDs as an alternative to XRD arrays, calibration measurements made at the National Synchrotron Light Source (NSLS) at Brookhaven National Laboratory are used to accurately calculate the x-ray flux from a laser-heated target. This is compared to a flux measurement using the Dante XRD diagnostic. Estimates indicate that the photoinduced conductivity from measurements made at Omega are too large, and calculationsmore » using the radiometric calibrations made at the NSLS agree with this hypothesis. High-purity, single-crystal, chemical vapor deposited (CVD) diamond samples are compared to natural type-IIa PCDs and show promising high resistivity effects, the corollary of which preliminary results show is a slower response time.« less

The Diamond Window with Boron-Doped Layers for the Output of Microwave Radiation at High Peak and Average Power Levels

NASA Astrophysics Data System (ADS)

Ivanov, O. A.; Kuzikov, S. V.; Vikharev, A. A.; Vikharev, A. L.; Lobaev, M. A.

2017-10-01

We propose a novel design of the barrier window for the output of microwave radiation at high peak and average power levels. A window based on a plate of polycrystalline CVD diamond with thin (nanometer-thick) boron-doped layers with increased conductivity is considered. Such a window, which retains the low radiation loss due to the small total thickness of the conductive layers and the high thermal conductivity inherent in diamond, prevents accumulation of a static charge on its surface, on the one hand, and allows one to produce a static electric field on the surface of the doped layer, which impedes the development of a multipactor discharge, on the other hand. In this case, a high level of the power of the transmitted radiation and a large passband width are ensured by choosing the configuration of the field in the form of a traveling wave inside the window.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Effect of magnetic and electric coupling fields on micro- and nano- structure of carbon films in the CVD diamond process and their electron field emission property

NASA Astrophysics Data System (ADS)

Wang, Yijia; Li, Jiaxin; Hu, Naixiu; Jiang, Yunlu; Wei, Qiuping; Yu, Zhiming; Long, Hangyu; Zhu, Hekang; Xie, Youneng; Ma, Li; Lin, Cheng-Te; Su, Weitao

2018-03-01

In this paper, both electric field and magnetic field were used to assist the hot filament chemical vapor deposition (HFCVD) and we systematically investigated the effects of which on the (1) phase composition, (2) grain size, (3) thickness and (4) preferred orientation of diamond films through SEM, Raman and XRD. The application of magnetic field in electric field, so called ‘the magnetic and electric coupling fields’, enhanced the graphitization and refinement of diamond crystals, slowed down the decrease of film thickness along with the increase of bias current, and suppressed diamond (100) orientation. During the deposition process, the electric field provided additional energy to HFCVD system and generated large number of energetic particles which might annihilate at the substrate and lose kinetic energy, while the Lorentz force, provided by magnetic field, could constrict charged particles (including electrons) to do spiral movement, which prolonged their moving path and life, thus the system energy increased. With the graphitization of diamond films intensified, the preferred orientation of diamond films completely evolved from (110) to (100), until the orientation and diamond phase disappeared, which can be attributed to (I) the distribution and concentration ratio of carbon precursors (C2H2 and CH3) and (II) graphitization sequence of diamond crystal facets. Since the electron field emission property of carbon film is sensitive to the phase composition, thickness and preferred orientation, nano- carbon cones, prepared by the negative bias current of 20 mA and magnetic field strength of 80 Gauss, exhibited the lowest turn-on field of 6.1 V -1 μm-1.

Diamond Microchannel Heat Sink Designs For High Heat Flux Thermal Control

NASA Astrophysics Data System (ADS)

Corbin, Michael V.; DeBenedictis, Matthew M.; James, David B.; LeBlanc, Stephen P.; Paradis, Leo R.

2002-08-01

Directed energy weapons, wide band gap semiconductor based radars, and other powerful systems present significant thermal control challenges to component designers. heat Flux levels approaching 2000 W/cm(2) are encountered at the base of laser diodes, and levels as high as 500 WI /cm(2) are expected in laser slabs and power amplifier tube collectors. These impressive heat flux levels frequently combine with strict operating temperature requirements to further compound the thermal control problem. Many investigators have suggested the use of diamond heat spreaders to reduce flux levels at or near to its source, and some have suggested that diamond microchannel heat sinks ultimately may play a significant role in the solution of these problems. Design engineers at Raytheon Company have investigated the application of all-diamond microchannel heat sinks to representative high heat flux problems and have found the approach promising. Diamond microchannel fabrication feasibility has been demonstrated; integration into packaging systems and the accompanying material compatibility issues have been addressed; and thermal and hydrodynamic performance predictions have been made for selected, possible applications. An example of a practical, all diamond microchannel heat sink has been fabricated, and another is in process and will be performance tested. The heat sink assembly is made entirely of optical quality, CVD diamond and is of sufficient strength to withstand the thermal and pressure-induced mechanical loads associated with manufacture and use in tactical weapons environment. The work presented describes the development program's accomplishments to date, and highlights many of the areas for future study.

Interface Properties of Wide Bandgap Semiconductor Structures

DTIC Science & Technology

1993-12-01

oxyacetylene torch and a water cooled substrate. Studying and controlling this chemical vapor deposition (CVD) process, however, can be frustrating because the...the carbide heat of formation. The precursors of chlorinated methylsilanes coupled with bias were used to deposit C films on Si(100). Textured C (lll...films were also achieved using an oxyacetylene torch . Cu forms an epitaxial rectifyingIcontact to diamond with a Schottky barrier height (SBH) of

Atomic interactions at the (100) diamond surface and the impact of surface and interface changes on the electronic transport properties

NASA Astrophysics Data System (ADS)

Deferme, Wim

Centuries and centuries already, diamond is a material that speaks to ones imagination. Till the 18th century it was only mined in India, after it was also found in Brazil and South-Africa. But along the fascinating properties of diamond, it is also a very interesting material for industry. After the discovery at the end of the 18th century that diamond consists of carbon, it took until the 50's of the previous century before research groups from Russia, Japan and the USA were able to reproduce the growth process of diamond. In 1989 it was discovered that the surface of intrinsic, insulation diamond can be made conductive by hydrogenating the surface. It was clear that not only hydrogen at the surface but also the so called "adsorbates" were responsible for this conductivity. It was still not completely clear what was the influence of other species (like oxygen) on the mechanism of surface conductivity and therefore in this thesis the influence of oxygen on the electronic transport properties of atomically flat diamond are researched. Besides the growth of atomically flat diamond with the use of CVD (chemical vapour deposition) en the study of the grown surfaces with characterising techniques such as AFM (atomic force microscopy) and STM (scanning tunnelling microscopy), the study of the surface treatment with plasma techniques is the main topic of this thesis. The influence of oxygen on the surface conductivity is studied and with the ToF (Time-of-Flight) technique the transport properties of the freestanding diamond are examined. With a short laserflash, electrons and holes are created at the diamond/aluminium interface and due to an electric field (up to 500V) the charge carriers are translated to the back contact. In this way the influence of the surface and the changes at the aluminum contacts is studied leading to very interesting results.

Effect of ultrasonic tip and root-end filling material on bond strength.

PubMed

Vivan, Rodrigo Ricci; Guerreiro-Tanomaru, Juliane Maria; Bernardes, Ricardo Affonso; Reis, José Mauricio Santos Nunes; Hungaro Duarte, Marco Antonio; Tanomaru-Filho, Mário

2016-11-01

The objective of this study was to evaluate the bond strength of three root-end filling materials (MTAA-MTA Angelus, MTAS-experimental MTA Sealer, and ZOE- zinc oxide and eugenol cement) in retrograde preparations performed with different ultrasonic tips (CVD, Trinity, and Satelec). Ninety 2-mm root sections from single-rooted human teeth were used. The retrograde cavities were prepared by using the ultrasonic tips, coupled to a device for position standardization. The specimens were randomly divided into nine groups: CVD MTAA; CVD MTAS; CVD ZOE; Trinity MTAA; Trinity MTAS; Trinity ZOE; Satelec MTAA; Satelec MTAS; Satelec ZOE. Each resin disc/dentin/root-end filling material was placed in the machine to perform the push-out test. The specimens were examined in a stereomicroscope to evaluate the type of failure. Data were submitted to statistical analysis using ANOVA and Tukey tests (α = 0.05). The highest bond strength was observed for the CVD tip irrespective of the material used (P < 0.05). There was no significant difference for the Trinity TU-18 diamond and S12 Satelec tips (P > 0.05). MTAA and MTAS showed highest bond strength. The most common type of failure was adhesion between the filling material and dentin wall, except for ZOE, where mixed failure was predominant. The CVD tip favored higher bond strength of the root-end filling materials. MTA Angelus and experimental MTAS presented bond strength to dentin prepared with ultrasonic tips. Root-end preparation with the CVD tip positively influences the bond strength of root-end filling materials. MTA Angelus and experimental MTAS present bond strength to be used as root-end filling materials.

Belle-II VXD radiation monitoring and beam abort with sCVD diamond sensors

NASA Astrophysics Data System (ADS)

Adamczyk, K.; Aihara, H.; Angelini, C.; Aziz, T.; Babu, V.; Bacher, S.; Bahinipati, S.; Barberio, E.; Baroncelli, T.; Basith, A. K.; Batignani, G.; Bauer, A.; Behera, P. K.; Bergauer, T.; Bettarini, S.; Bhuyan, B.; Bilka, T.; Bosi, F.; Bosisio, L.; Bozek, A.; Buchsteiner, F.; Casarosa, G.; Ceccanti, M.; Červenkov, D.; Chendvankar, S. R.; Dash, N.; Divekar, S. T.; Doležal, Z.; Dutta, D.; Forti, F.; Friedl, M.; Hara, K.; Higuchi, T.; Horiguchi, T.; Irmler, C.; Ishikawa, A.; Jeon, H. B.; Joo, C.; Kandra, J.; Kang, K. H.; Kato, E.; Kawasaki, T.; Kodyš, P.; Kohriki, T.; Koike, S.; Kolwalkar, M. M.; Kvasnička, P.; Lanceri, L.; Lettenbicher, J.; Mammini, P.; Mayekar, S. N.; Mohanty, G. B.; Mohanty, S.; Morii, T.; Nakamura, K. R.; Natkaniec, Z.; Negishi, K.; Nisar, N. K.; Onuki, Y.; Ostrowicz, W.; Paladino, A.; Paoloni, E.; Park, H.; Pilo, F.; Profeti, A.; Rashevskaya, I.; Rao, K. K.; Rizzo, G.; Rozanska, M.; Sandilya, S.; Sasaki, J.; Sato, N.; Schultschik, S.; Schwanda, C.; Seino, Y.; Shimizu, N.; Stypula, J.; Tanaka, S.; Tanida, K.; Taylor, G. N.; Thalmeier, R.; Thomas, R.; Tsuboyama, T.; Uozumi, S.; Urquijo, P.; Vitale, Lorenzo; Volpi, M.; Watanuki, S.; Watson, I. J.; Webb, J.; Wiechczynski, J.; Williams, S.; Würkner, B.; Yamamoto, H.; Yin, H.; Yoshinobu, T.

2016-07-01

The Belle-II VerteX Detector (VXD) has been designed to improve the performances with respect to Belle and to cope with an unprecedented luminosity of 8 ×1035cm-2s-1 achievable by the SuperKEKB. Special care is needed to monitor both the radiation dose accumulated throughout the life of the experiment and the instantaneous radiation rate, in order to be able to promptly react to sudden spikes for the purpose of protecting the detectors. A radiation monitoring and beam abort system based on single-crystal diamond sensors is now under an active development for the VXD. The sensors will be placed in several key positions in the vicinity of the interaction region. The severe space limitations require a challenging remote readout of the sensors.

Diamond-like carbon prepared by pulsed laser deposition with ion bombardment: physical properties

NASA Astrophysics Data System (ADS)

Písařík, P.; Mikšovský, J.; Remsa, J.; Zemek, J.; Tolde, Z.; Jelínek, M.

2018-01-01

Diamond-like carbon (DLC) and titanium-doped DLC thin films were prepared by unique hybrid system consisting of pulsed laser deposition, ion source (bombardment) and magnetron sputtering. The influence of deposition parameters (ion energies, deposition pressures and magnetron power) on composition and physical properties was studied. Composition and sp 3/ sp 2 ratio were determined by XPS. sp 3/ sp 2 ratio was in the range from 1.4 to 2.2 for undoped DLC and from 3.4 to 4.8 for Ti-DLC. AFM showed that the layers were smooth, but with small amounts of random droplets. The measurements of the contact angle and determination of surface free energy were made for water, diiodomethane and ethylene glycol. Hardness and reduced Young's modulus varied from 20 to 31 GPa and from 182 to 276 GPa, respectively. Film adhesion was determined by scratch test; L C3 reached 23 N for DLC and 27 N for TiDLC. Optimization of sp 3/ sp 2 ratio, hardness and adhesion to biomedical alloys will advance the DLC coatings usability in the field of implantology.

Scanning transmission electron microscopy (STEM) study on surface modified CVD diamond/Si(111) film post implanted Fe-B and NiFe-B related to GMR properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Purwanto, Setyo, E-mail: setyo-p@batan.go.id, E-mail: purwantosetyo@yahoo.com; Dimyati, A., E-mail: arbi-dimyati@hotmail.com; Iskandar, R.

Nanostructure investigation on the post implantation by Fe-B and NiFe-B on CVD diamond/Si(111) film have been studied by means of STEM related to their GMR phenomena. Two samples were investigated carefully, firstly sample is post NiFe-B at E=70keV and dose= 10{sup 15} ions/cm{sup 2} (denoted as A-E3D1). Secondly, is post FeB at E=20 keV and dose= 10{sup 15} ions/cm{sup 2} (denoted as B-E1D1). Based on FPP measurement at room temperature (RT) and H{sub applied} = 8 kOe, A-E3D1 sample has MR ratio almost 80% and MR ratio in B-E1D1 sample is 45%. Based on STEM-EDX investigation, there are two aspectsmore » of how MR ratio of A-E3D1 more higher than those of B-E1D1. Firstly, surface nanostructure on the top of A-E3D1 film is more grazing than on the top of B-E1D1. Analysis with Scanning Transmission Electron Microscope (STEM) equipped with Electron Energy Loss Spectroscopy (EELS) the growth of amorphous carbon layer on top of the implanted diamond film with thickness around 100 nm and only 20 nm on the no implanted sample have observed. Boron atoms were found inside the carbon amorphous layer distributed homogenously. Secondly, oxygen content at the interface between diamond film and silicon substrate in sample A-E3D1 was lower than those in B-E1D1 sample. This condition gives the resistance value in A-E3D1 lower than value in B-E1D1. This result is close to the Raman Spectroscopy data measurement which obviously suggests changes on the Raman spectrum due to implantation related to Oxygen excitation from B-E1D1 sample.« less

Diamond xenolith and matrix organic matter in the Sutter's Mill meteorite measured by C-XANES

NASA Astrophysics Data System (ADS)

Kebukawa, Yoko; Zolensky, Michael E.; Kilcoyne, A. L. David; Rahman, Zia; Jenniskens, Peter; Cody, George D.

2014-11-01

The Sutter's Mill (SM) meteorite fell in El Dorado County, California, on April 22, 2012. This meteorite is a regolith breccia composed of CM chondrite material and at least one xenolithic phase: oldhamite. The meteorite studied here, SM2 (subsample 5), was one of three meteorites collected before it rained extensively on the debris site, thus preserving the original asteroid regolith mineralogy. Two relatively large (10 μm sized) possible diamond grains were observed in SM2-5 surrounded by fine-grained matrix. In the present work, we analyzed a focused ion beam (FIB) milled thin section that transected a region containing these two potential diamond grains as well as the surrounding fine-grained matrix employing carbon and nitrogen X-ray absorption near-edge structure (C-XANES and N-XANES) spectroscopy using a scanning transmission X-ray microscope (STXM) (Beamline 5.3.2 at the Advanced Light Source, Lawrence Berkeley National Laboratory). The STXM analysis revealed that the matrix of SM2-5 contains C-rich grains, possibly organic nanoglobules. A single carbonate grain was also detected. The C-XANES spectrum of the matrix is similar to that of insoluble organic matter (IOM) found in other CM chondrites. However, no significant nitrogen-bearing functional groups were observed with N-XANES. One of the possible diamond grains contains a Ca-bearing inclusion that is not carbonate. C-XANES features of the diamond-edges suggest that the diamond might have formed by the CVD process, or in a high-temperature and -pressure environment in the interior of a much larger parent body.

Optimization of Cvd Diamond Coating Type on Micro Drills in Pcb Machining

NASA Astrophysics Data System (ADS)

Lei, X. L.; He, Y.; Sun, F. H.

2016-12-01

The demand for better tools for machining printed circuit boards (PCBs) is increasing due to the extensive usage of these boards in digital electronic products. This paper is aimed at optimizing coating type on micro drills in order to extend their lifetime in PCB machining. First, the tribotests involving micro crystalline diamond (MCD), nano crystalline diamond (NCD) and bare tungsten carbide (WC-Co) against PCBs show that NCD-PCB tribopair exhibits the lowest friction coefficient (0.35) due to the unique nano structure and low surface roughness of NCD films. Thereafter, the dry machining performance of the MCD- and NCD-coated micro drills on PCBs is systematically studied, using diamond-like coating (DLC) and TiAlN-coated micro drills as comparison. The experiments show that the working lives of these micro drills can be ranked as: NCD>TiAlN>DLC>MCD>bare WC-Co. The superior cutting performance of NCD-coated micro drills in terms of the lowest flank wear growth rate, no tool degradation (e.g. chipping, tool tipping) appearance, the best hole quality as well as the lowest feed force may come from the excellent wear resistance, lower friction coefficient against PCB as well as the high adhesive strength on the underneath substrate of NCD films.

Selective deposition of polycrystalline diamond films using photolithography with addition of nanodiamonds as nucleation centers

NASA Astrophysics Data System (ADS)

Okhotnikov, V. V.; Linnik, S. A.; Gaidaichuk, A. V.; Shashev, D. V.; Nazarova, G. Yu; Yurchenko, V. I.

2016-02-01

A new method of selective deposition of polycrystalline diamond has been developed and studied. The diamond coatings with a complex, predetermined geometry and resolution up to 5 μm were obtained. A high density of polycrystallites in the coating area was reached (up to 32·107 pcs/cm2). The uniformity of the film reached 100%, and the degree of the surface contamination by parasitic crystals did not exceed 2%. The technology was based on the application of the standard photolithography with an addition of nanodiamond suspension into the photoresist that provided the creation of the centers of further nucleation in the areas which require further overgrowth. The films were deposited onto monocrystalline silicon substrates using the method of “hot filaments” in the CVD reactor. The properties of the coating and the impact of the nanodiamond suspension concentration in the photoresist were also studied. The potential use of the given method includes a high resolution, technological efficiency, and low labor costs compared to the standard methods (laser treatment, chemical etching in aggressive environments,).

Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers

DOE PAGES

Zhang, Jingyuan Linda; Lagoudakis, Konstantinos G.; Tzeng, Yan -Kai; ...

2017-10-23

Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the opticalmore » transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.« less

Complete coherent control of silicon vacancies in diamond nanopillars containing single defect centers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Jingyuan Linda; Lagoudakis, Konstantinos G.; Tzeng, Yan -Kai

Arrays of identical and individually addressable qubits lay the foundation for the creation of scalable quantum hardware such as quantum processors and repeaters. Silicon-vacancy (SiV) centers in diamond offer excellent physical properties such as low inhomogeneous broadening, fast photon emission, and a large Debye–Waller factor. The possibility for all-optical ultrafast manipulation and techniques to extend the spin coherence times makes them promising candidates for qubits. Here, we have developed arrays of nanopillars containing single (SiV) centers with high yield, and we demonstrate ultrafast all-optical complete coherent control of the excited state population of a single SiV center at the opticalmore » transition frequency. The high quality of the chemical vapor deposition (CVD) grown SiV centers provides excellent spectral stability, which allows us to coherently manipulate and quasi-resonantly read out the excited state population of individual SiV centers on picosecond timescales using ultrafast optical pulses. Furthermore, this work opens new opportunities to create a scalable on-chip diamond platform for quantum information processing and scalable nanophotonics applications.« less

Circularly polarized Raman study on diamond structure crystals

NASA Astrophysics Data System (ADS)

Lee, Je-Ho; Kim, Sera; Seong, Maeng-Je

2018-01-01

Circularly polarized Raman and/or photoluminescence (PL) analyses have recently been very important in studying physical properties of many layered materials that were either mechanically exfoliated or grown by chemical-vapor-deposition (CVD) on silicon substrates. Since silicon Raman signal is always accompanied by the circularly polarized Raman and/or PL signal from the layered materials, observation of proper circularly polarized Raman selection rules on silicon substrates would be extremely good indicator that the circularly polarized Raman and/or PL measurements on the layered materials were done properly. We have performed circularly polarized Raman measurements on silicon substrates and compared the results with the Raman intensities calculated by using Raman tensors of the diamond crystal structure. Our experimental results were in excellent agreement with the calculation. Similar circularly polarized Raman analysis done on germanium substrate also showed good agreement.

Growth of High Quality Carbon Nanotubes on Free Standing Diamond Substrates

DTIC Science & Technology

2010-01-01

CNTs forming a mat of ~5 µm thickness and consisting of ~20 nm diameter tubes were observed to grow in a thermal CVD system using C2H2 as precursor...with CNT microfin architectures have been recently proposed by Kordas et al. [5]. CNT films as thermal interface materials were also discussed by Zhu...using a 1 inch diameter quartz tube in a horizontal furnace. Initially, the tube furnace was evacuated by using a rough pump and then purged with Ar

Microstructure and mechanical properties of diamond films on titanium-aluminum-vanadium alloy

NASA Astrophysics Data System (ADS)

Catledge, Shane Aaron

The primary focus of this dissertation is the investigation of the processing-structure-property relationships of diamond films deposited on Ti-6Al-4V alloy by microwave plasma chemical vapor deposition (MPCVD). By depositing a well-adhered protective layer of diamond on an alloy component, its hardness, wear-resistance, performance, and overall lifetime could be significantly increased. However, due to the large thermal expansion mismatch between the diamond film and metal (and the corresponding residual stress induced in the film), film adhesion is typically unsatisfactory and often results in immediate delamination after processing. Therefore, it is a major goal of this research to improve adhesion of the diamond film to the alloy substrate. Through the use of innovative processing techniques involving MPCVD deposition conditions and methane (CH4), nitrogen (N2), and hydrogen (H2) chemistry, we have achieved diamond films which consistently adhere to the alloy substrate. In addition, we have discovered that, with the appropriate choice of deposition conditions, the film structure can be tailored to range from highly crystalline, well-faceted diamond to nanocrystalline diamond with extremely low surface roughness (as low as 27 nm). The relationship between processing and structure was studied using in-situ optical emission spectroscopy, micro-Raman spectroscopy, surface profilometry, glancing-angle x-ray diffraction, and scanning electron microscopy. We observe that when nitrogen is added to the H2/CH4 feedgas mixture, a carbon-nitrogen (CN) emission band arises and its relative abundance to the carbon dimer (C2) gas species is shown to have a pronounced influence on the diamond film structure. By appropriate choice of deposition chemistry and conditions, we can tailor the diamond film structure and its corresponding properties. The mechanical properties of interest in this thesis are those relating to the integrity of the film/substrate interface, as well as the hardness, wear resistance, residual stress, and elastic modulus of the film. The mechanical properties of the diamond coatings were characterized by indentation and wear testing instruments. Finally, we developed a model based on fundamental thermodynamic and optical principles for extracting the time dependence of film thickness and surface roughness using optical pyrometry for the case of an absorbing substrate. This model provides a convenient way to determine film thickness during growth in CVD systems as well as a reliable estimate of surface roughness.

Medical beam monitor—Pre-clinical evaluation and future applications

NASA Astrophysics Data System (ADS)

Frais-Kölbl, Helmut; Griesmayer, Erich; Schreiner, Thomas; Georg, Dietmar; Pernegger, Heinz

2007-10-01

Future medical ion beam applications for cancer therapy which are based on scanning technology will require advanced beam diagnostics equipment. For a precise analysis of beam parameters we want to resolve time structures in the range of microseconds to nanoseconds. A prototype of an advanced beam monitor was developed by the University of Applied Sciences Wiener Neustadt and its research subsidiary Fotec in co-operation with CERN RD42, Ohio State University and the Jožef Stefan Institute in Ljubljana. The detector is based on polycrystalline Chemical Vapor Deposition (pCVD) diamond substrates and is equipped with readout electronics up to 2 GHz analog bandwidth. In this paper we present the design of the pCVD-detector system and results of tests performed in various particle accelerator based facilities. Measurements performed in clinical high energy photon beams agreed within 1.2% with results obtained by standard ionization chambers.

Formation of nanocrystalline diamond in polymer like carbon films deposited by plasma CVD.

PubMed

Bhaduri, A; Chaudhuri, P

2009-09-01

Conventional plasma enhanced chemical vapour deposition (PECVD) method is generally not suitable for the growth of nanocrystalline diamond (NCD) films. However, our study shows that conditions favourable for powder formation help to grow large amount of nanocrystallites in conventional PECVD. With CH4 as the carbon source gas, dilution with Ar and moderate (50 W) rf power enhances formations of powders (nanoparticles) and C2 dimers within the plasma. On the other hand, with pure CH4 or with hydrogen diluted CH4, powder formation as also NCD growth is hindered. It is proposed that the nanoparticles formed in the plasma act as the "islands" while the C2 dimers are the "seeds" for the NCD growth. The structure of the films deposited on the grounded anode under different conditions of dilution has been studied. It is observed that with high Ar dilution the films contain NCD embedded in polymer like carbon (PLC) matrix.

Surface Structure of Aerobically Oxidized Diamond Nanocrystals

DOE PAGES

Wolcott, Abraham; Schiros, Theanne; Trusheim, Matthew E.; ...

2014-10-27

Here we investigate the aerobic oxidation of high-pressure, high-temperature nanodiamonds (5–50 nm dimensions) using a combination of carbon and oxygen K-edge X-ray absorption, wavelength-dependent X-ray photoelectron, and vibrational spectroscopies. Oxidation at 575 °C for 2 h eliminates graphitic carbon contamination (>98%) and produces nanocrystals with hydroxyl functionalized surfaces as well as a minor component (<5%) of carboxylic anhydrides. The low graphitic carbon content and the high crystallinity of HPHT are evident from Raman spectra acquired using visible wavelength excitation (λ excit = 633 nm) as well as carbon K-edge X-ray absorption spectra where the signature of a core–hole exciton ismore » observed. Both spectroscopic features are similar to those of chemical vapor deposited (CVD) diamond but differ significantly from the spectra of detonation nanodiamond. Lastly, we discuss the importance of these findings to the functionalization of nanodiamond surfaces for biological labeling applications.« less

Surface Structure of Aerobically Oxidized Diamond Nanocrystals

PubMed Central

2015-01-01

We investigate the aerobic oxidation of high-pressure, high-temperature nanodiamonds (5–50 nm dimensions) using a combination of carbon and oxygen K-edge X-ray absorption, wavelength-dependent X-ray photoelectron, and vibrational spectroscopies. Oxidation at 575 °C for 2 h eliminates graphitic carbon contamination (>98%) and produces nanocrystals with hydroxyl functionalized surfaces as well as a minor component (<5%) of carboxylic anhydrides. The low graphitic carbon content and the high crystallinity of HPHT are evident from Raman spectra acquired using visible wavelength excitation (λexcit = 633 nm) as well as carbon K-edge X-ray absorption spectra where the signature of a core–hole exciton is observed. Both spectroscopic features are similar to those of chemical vapor deposited (CVD) diamond but differ significantly from the spectra of detonation nanodiamond. The importance of these findings to the functionalization of nanodiamond surfaces for biological labeling applications is discussed. PMID:25436035

Test of a prototype neutron spectrometer based on diamond detectors in a fast reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Osipenko, M.; Ripani, M.; Ricco, G.

2015-07-01

A prototype of neutron spectrometer based on diamond detectors has been developed. This prototype consists of a {sup 6}Li neutron converter sandwiched between two CVD diamond crystals. The radiation hardness of the diamond crystals makes it suitable for applications in low power research reactors, while a low sensitivity to gamma rays and low leakage current of the detector permit to reach good energy resolution. A fast coincidence between two crystals is used to reject background. The detector was read out using two different electronic chains connected to it by a few meters of cable. The first chain was based onmore » conventional charge-sensitive amplifiers, the other used a custom fast charge amplifier developed for this purpose. The prototype has been tested at various neutron sources and showed its practicability. In particular, the detector was calibrated in a TRIGA thermal reactor (LENA laboratory, University of Pavia) with neutron fluxes of 10{sup 8} n/cm{sup 2}s and at the 3 MeV D-D monochromatic neutron source named FNG (ENEA, Rome) with neutron fluxes of 10{sup 6} n/cm{sup 2}s. The neutron spectrum measurement was performed at the TAPIRO fast research reactor (ENEA, Casaccia) with fluxes of 10{sup 9} n/cm{sup 2}s. The obtained spectra were compared to Monte Carlo simulations, modeling detector response with MCNP and Geant4. (authors)« less

Fabrication of monolithic microfluidic channels in diamond with ion beam lithography

NASA Astrophysics Data System (ADS)

Picollo, F.; Battiato, A.; Boarino, L.; Ditalia Tchernij, S.; Enrico, E.; Forneris, J.; Gilardino, A.; Jakšić, M.; Sardi, F.; Skukan, N.; Tengattini, A.; Olivero, P.; Re, A.; Vittone, E.

2017-08-01

In the present work, we report on the monolithic fabrication by means of ion beam lithography of hollow micro-channels within a diamond substrate, to be employed for microfluidic applications. The fabrication strategy takes advantage of ion beam induced damage to convert diamond into graphite, which is characterized by a higher reactivity to oxidative etching with respect to the chemically inert pristine structure. This phase transition occurs in sub-superficial layers thanks to the peculiar damage profile of MeV ions, which mostly damage the target material at their end of range. The structures were obtained by irradiating commercial CVD diamond samples with a micrometric collimated C+ ion beam at three different energies (4 MeV, 3.5 MeV and 3 MeV) at a total fluence of 2 × 1016 cm-2. The chosen multiple-energy implantation strategy allows to obtain a thick box-like highly damaged region ranging from 1.6 μm to 2.1 μm below the sample surface. High-temperature annealing was performed to both promote the graphitization of the ion-induced amorphous layer and to recover the pristine crystalline structure in the cap layer. Finally, the graphite was removed by ozone etching, obtaining monolithic microfluidic structures. These prototypal microfluidic devices were tested injecting aqueous solutions and the evidence of the passage of fluids through the channels was confirmed by confocal fluorescent microscopy.

The High performance of nanocrystalline CVD diamond coated hip joints in wear simulator test.

PubMed

Maru, M M; Amaral, M; Rodrigues, S P; Santos, R; Gouvea, C P; Archanjo, B S; Trommer, R M; Oliveira, F J; Silva, R F; Achete, C A

2015-09-01

The superior biotribological performance of nanocrystalline diamond (NCD) coatings grown by a chemical vapor deposition (CVD) method was already shown to demonstrate high wear resistance in ball on plate experiments under physiological liquid lubrication. However, tests with a close-to-real approach were missing and this constitutes the aim of the present work. Hip joint wear simulator tests were performed with cups and heads made of silicon nitride coated with NCD of ~10 μm in thickness. Five million testing cycles (Mc) were run, which represent nearly five years of hip joint implant activity in a patient. For the wear analysis, gravimetry, profilometry, scanning electron microscopy and Raman spectroscopy techniques were used. After 0.5 Mc of wear test, truncation of the protruded regions of the NCD film happened as a result of a fine-scale abrasive wear mechanism, evolving to extensive plateau regions and highly polished surface condition (Ra<10nm). Such surface modification took place without any catastrophic features as cracking, grain pullouts or delamination of the coatings. A steady state volumetric wear rate of 0.02 mm(3)/Mc, equivalent to a linear wear of 0.27 μm/Mc favorably compares with the best performance reported in the literature for the fourth generation alumina ceramic (0.05 mm(3)/Mc). Also, squeaking, quite common phenomenon in hard-on-hard systems, was absent in the present all-NCD system. Copyright © 2015 Elsevier Ltd. All rights reserved.

Synthetic diamond devices for radio-oncology applications

NASA Astrophysics Data System (ADS)

Descamps, C.; Tromson, D.; Mer, C.; Nesládek, M.; Bergonzo, P.; Benabdesselam, M.

2006-09-01

Diamond exhibits a range of outstanding properties that make it a material of interest for radiation detection and particularly in the field of dosimetry applications. In fact, its crystallographic structure makes it chemically inert and radiation hard. Moreover, its atomic number (carbon Z = 6) close to the equivalent effective atomic number of human soft tissues (Z = 7.4) and of water (reference material in radiotherapy) enables a direct evaluation of the deposited dose without requiring corrections for material nature or energy. Finally, as a bio-compatible material, it can be sterilised, and it is non-toxic thus giving strong advantages for medical uses. Natural diamonds are expensive, rare and their use implies a severe gem selection to fabricate reproducible and reliable devices. The emergence of synthetic samples from the chemical vapour deposition (CVD) technique offers new possibilities in the fabrication of ionisation chamber for the particular field of radiotherapy. Previous studies have shown that defect levels present in material clearly influence the device response under irradiation. Therefore, in order to optimise dosimetric characteristics needed in radiotherapy applications, various low and precisely nitrogen concentrations were incorporated in the material during growth. Influence of these incorporations on ionisation chamber response under medical cobalt irradiator is presented in this paper.

Diamond detectors for the TOTEM timing upgrade

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antchev, G.; Aspell, P.; Atanassov, I.

This paper describes the design and the performance of the timing detector developed by the TOTEM Collaboration for the Roman Pots (RPs) to measure the Time-Of-Flight (TOF) of the protons produced in central diffractive interactions at the LHC . The measurement of the TOF of the protons allows the determination of the longitudinal position of the proton interaction vertex and its association with one of the vertices reconstructed by the CMS detectors. The TOF detector is based on single crystal Chemical Vapor Deposition (scCVD) diamond plates and is designed to measure the protons TOF with about 50 ps time precision.more » This upgrade to the TOTEM apparatus will be used in the LHC run 2 and will tag the central diffractive events up to an interaction pileup of about 1. A dedicated fast and low noise electronics for the signal amplification has been developed. The digitization of the diamond signal is performed by sampling the waveform. In conclusion, after introducing the physics studies that will most profit from the addition of these new detectors, we discuss in detail the optimization and the performance of the first TOF detector installed in the LHC in November 2015.« less

Diamond detectors for the TOTEM timing upgrade

DOE PAGES

Antchev, G.; Aspell, P.; Atanassov, I.; ...

2017-03-09

This paper describes the design and the performance of the timing detector developed by the TOTEM Collaboration for the Roman Pots (RPs) to measure the Time-Of-Flight (TOF) of the protons produced in central diffractive interactions at the LHC . The measurement of the TOF of the protons allows the determination of the longitudinal position of the proton interaction vertex and its association with one of the vertices reconstructed by the CMS detectors. The TOF detector is based on single crystal Chemical Vapor Deposition (scCVD) diamond plates and is designed to measure the protons TOF with about 50 ps time precision.more » This upgrade to the TOTEM apparatus will be used in the LHC run 2 and will tag the central diffractive events up to an interaction pileup of about 1. A dedicated fast and low noise electronics for the signal amplification has been developed. The digitization of the diamond signal is performed by sampling the waveform. In conclusion, after introducing the physics studies that will most profit from the addition of these new detectors, we discuss in detail the optimization and the performance of the first TOF detector installed in the LHC in November 2015.« less

Advanced laser diagnostics for diamond deposition research

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kruger, C.H.; Owano, T.G.; Wahl, E.H.

Chemical Vapor Deposition (CVD) using thermal plasmas is attractive for diamond synthesis applications due to the inherently high reactant densities and throughput, but the associated high gas-phase collision rates in the boundary layer above the substrate produce steep thermal and species gradients which can drive the complex plasma chemistry away from optimal conditions. To understand and control these environments, accurate measurements of temperature and species concentrations within the reacting boundary layer are needed. This is challenging in atmospheric pressure reactors due to the highly luminous environment, steep thermal and species gradients, and small spatial scales. The applicability of degenerate four-wavemore » mixing (DFWM) as a spectroscopic probe of atmospheric pressure reacting plasmas has been investigated. This powerful, nonlinear technique has been applied to the measurement of temperature and radical species concentrations in the boundary layer of a diamond growth substrate immersed in a flowing atmospheric pressure plasma. In-situ measurements of CH and C{sub 2} radicals have been performed to determine spatially resolved profiles of vibrational temperature, rotational temperature, and species concentration. Results of these measurements are compared with the predictions of a detailed numerical simulation.« less

Vacancy-impurity centers in diamond: prospects for synthesis and applications

NASA Astrophysics Data System (ADS)

Ekimov, E. A.; Kondrin, M. V.

2017-06-01

The bright luminescence of impurity-vacancy complexes, combined with high chemical and radiation resistance, makes diamond an attractive platform for the production of single-photon emitters and luminescent biomarkers for applications in nanoelectronics and medicine. Two representatives of this kind of defects in diamond, silicon-vacancy (SiV) and germanium-vacancy (GeV) centers, are discussed in this review; their similarities and differences are demonstrated in terms of the more thoroughly studied nitrogen-vacancy (NV) complexes. The recent discovery of GeV luminescent centers opens a unique opportunity for the controlled synthesis of single-photon emitters in nanodiamonds. We demonstrate prospects for the high-pressure high-temperature (HPHT) technique to create single-photon emitters, not only as an auxiliary to chemical vapor deposition (CVD) and ion-implantation methods but also as a primary synthesis tool for producing color centers in nanodiamonds. Besides practical applications, comparative studies of these two complexes, which belong to the same structural class of defects, have a fundamental importance for deeper understanding of shelving levels, the electronic structure, and optical properties of these centers. In conclusion, we discuss several open problems regarding the structure, charge state, and practical application of these centers, which still require a solution.

Hot-pressed production and laser properties of ZnSe:Fe2+

NASA Astrophysics Data System (ADS)

Avetisov, R. I.; Balabanov, S. S.; Firsov, K. N.; Gavrishchuk, E. M.; Gladilin, A. A.; Ikonnikov, V. B.; Kalinushkin, V. P.; Kazantsev, S. Yu.; Kononov, I. G.; Zykova, M. P.; Mozhevitina, E. N.; Khomyakov, A. V.; Savin, D. V.; Timofeeva, N. A.; Uvarov, O. V.; Avetissov, I. Ch.

2018-06-01

A new approach for fabrication of laser elements in form of plates based on ZnSe:Fe2+ with undoped faces, combining the advantages of hot pressing and diffusion techniques has been proposed. CVD-ZnSe was used as a host material. 1 μm Fe film was deposited by electron-beam technique on one side of the polished CVD-ZnSe plate (20 mm in diameter and 2 mm in thickness). The elements were stacked in contact by iron surfaces, placed in a hot press-mold die, heated under vacuum to 1000 °C, exposed during 60 min with the application of 25 MPa uniaxial pressure. The iron film was dissolved in ZnSe matrix and elements welded together. The samples were subjected to hot isostatic pressing (HIP) during 29 h at 100 MPa argon pressure and 1300 °C. The influence of sintering and HIP processing conditions on local morphology and properties of the interface of welded elements was studied by SEM, TEM and optical microscopy. For all composite elements the lasing was obtained at a pumping by HF-laser at RT with high efficiency around 40%. The proposed technique removes restrictions on the size of laser elements and appears to be very promising for the management of the distribution profile of the doping component.

Electromagnetic properties of polycrystalline diamond from 35 K to room temperature and microwave to terahertz frequencies

NASA Astrophysics Data System (ADS)

Floch, Jean-Michel Le; Bara, Romain; Hartnett, John G.; Tobar, Michael E.; Mouneyrac, David; Passerieux, Damien; Cros, Dominique; Krupka, Jerzy; Goy, Philippe; Caroopen, Sylvain

2011-05-01

Dielectric resonators are key components for many microwave and millimeter wave applications, including high-Q filters and frequency-determining elements for precision frequency synthesis. These often depend on the quality of the dielectric material. The commonly used material for building the best cryogenic microwave oscillators is sapphire. However, sapphire is becoming a limiting factor for higher frequency designs. It is, then, important to find new candidates that can fulfill the requirements for millimeter wave low noise oscillators at room and cryogenic temperatures. These clocks are used as a reference in many fields, such as modern telecommunication systems, radio astronomy (very-long-baseline interferometry), and precision measurements at the quantum limit. High resolution measurements were taken of the temperature-dependence of the electromagnetic properties of a polycrystalline diamond disk at temperatures between 35 and 330 K at microwave to submillimeter wave frequencies. The cryogenic measurements were made using a TE01δ dielectric mode resonator placed inside a vacuum chamber connected to a single-stage pulse-tube cryocooler. The high frequency characterization was performed at room temperature using a combination of a quasi-optical two-lens transmission setup, a Fabry-Perot cavity, and a whispering gallery mode resonator excited with waveguides. Our CVD diamond sample exhibits a decreasing loss tangent with increasing frequencies. We compare the results with well known crystals. This comparison makes it clear that polycrystalline diamond could be an important material for generating stable frequencies at millimeter waves.

Identification of yellow luminescence centers in Be-doped GaN through pressure-dependent studies

NASA Astrophysics Data System (ADS)

Teisseyre, Henryk; Lyons, John L.; Kaminska, Agata; Jankowski, Dawid; Jarosz, Dawid; Boćkowski, Michał; Suchocki, Andrzej; Van de Walle, Chris G.

2017-06-01

Effective acceptor doping of wide-band-gap semiconductors is still an outstanding problem. Beryllium has been suggested as a shallow acceptor in GaN, but despite sporadic announcements, Be-induced p-type doping has never been practically realized. Be-doped GaN possesses two luminescence bands; one at 3.38 eV and a second near 2.2 eV at an energy close to that of the parasitic yellow luminescence often found in undoped GaN crystals. We have performed high hydrostatic pressure studies of bulk, Be-doped gallium nitride crystals using the diamond anvil cell technique. We observed a splitting of the yellow luminescence line under hydrostatic pressure into two components, one which is strongly dependent on applied pressure and another whose pressure dependence is more modest. Together with hybrid functional calculations, we attribute the strongly-varying component to the beryllium-oxygen complex. The second component of the yellow luminescence possesses very similar pressure behavior to the yellow luminescence observed in undoped samples grown by the same method, behavior which we find consistent with the CN acceptor. At higher pressure, we observe the vanishing of yellow luminescence and a rapid increase in luminescence intensity of the UV line. We explain this as the pressure-induced transformation of the Be-O complex from a highly localized state with large lattice relaxation to a delocalized state with limited lattice relaxation.

Electrochemically assisted deposition of hydroxyapatite on Ti6Al4V substrates covered by CVD diamond films - Coating characterization and first cell biological results.

PubMed

Strąkowska, Paulina; Beutner, René; Gnyba, Marcin; Zielinski, Andrzej; Scharnweber, Dieter

2016-02-01

Although titanium and its alloys are widely used as implant material for orthopedic and dental applications they show only limited corrosion stability and osseointegration in different cases. The aim of the presented research was to develop and characterize a novel surface modification system from a thin diamond base layer and a hydroxyapatite (HAp) top coating deposited on the alloy Ti6Al4V widely used for implants in contact with bone. This coating system is expected to improve both the long-term corrosion behavior and the biocompatibility and bioactivity of respective surfaces. The diamond base films were obtained by Microwave Plasma Assisted Chemical Vapor Deposition (MW-PACVD); the HAp coatings were formed in aqueous solutions by electrochemically assisted deposition (ECAD) at varying polarization parameters. Scanning electron microscopy (SEM), Raman microscopy, and electrical conductivity measurements were applied to characterize the generated surface states; the calcium phosphate coatings were additionally chemically analyzed for their composition. The biological properties of the coating system were assessed using hMSC cells analyzing for cell adhesion, proliferation, and osteogenic differentiation. Varying MW-PACVD process conditions resulted in composite coatings containing microcrystalline diamond (MCD/Ti-C), nanocrystalline diamond (NCD), and boron-doped nanocrystalline diamond (B-NCD) with the NCD coatings being dense and homogeneous and the B-NCD coatings showing increased electrical conductivity. The ECAD process resulted in calcium phosphate coatings from stoichiometric and non-stoichiometric HAp. The deposition of HAp on the B-NCD films run at lower cathodic potentials and resulted both in the highest coating mass and the most homogenous appearance. Initial cell biological investigations showed an improved cell adhesion in the order B-NCD>HAp/B-NCD>uncoated substrate. Cell proliferation was improved for both investigated coatings whereas ALP expression was highest for the uncoated substrate. Copyright © 2015 Elsevier B.V. All rights reserved.

A novel procedure to obtain nanocrystalline diamond/porous silicon composite by chemical vapor deposition/infiltration processes.

PubMed

Miranda, C R B; Azevedo, A F; Baldan, M R; Beloto, A F; Ferreira, N G

2009-06-01

Nanocrystalline diamond (NCD) films were formed on porous silicon (PS) substrate by Chemical Vapor Deposition/Infiltration (CVD/CVI) process using a hot filament reactor. This innovative procedure is determinant to grow a controlled three-dimensional diamond structure with diamond grains formation in the pores, covering uniformly the different growth planes. In this CVI process, a piece of reticulated vitreous carbon (RVC) was used, under de PS substrate, as an additional solid source of hydrocarbon that ensures the production of pertinent carbon growth species directly on PS and into its pores. PS substrates were obtained by anodization etching process of n-type silicon wafer in a hydrofluoric acid (HF) solution containing acetonitrile (CH3CN) which result in an uniform and well controlled porous distribution and size when compared with the usual ethanol solution. Depositions were performed using Ar-H2-CH4 where the methane concentration varied from 0 up to 1.0 vol%, to analyze the influence of RVC use as an additional carbon source on growth mechanism. Scanning Electron Microscopy (SEM) and Field Emission Gun (FEG) were used to investigate PS and NCD film morphology. SEM images of NCD showed faceted nanograins with average size from 5 to 16 nm and uniform surface texture covering all the supports among the pores resulting in an apparent micro honeycomb structure. Raman spectra confirmed the existence of sp2-bonded carbon at the grain boundaries. The spectra showed a peak that may be deconvoluted in two components at 1332 cm(-1) (diamond) and 1345 cm(-1) (D band). Two shoulders at 1150 and 1490 cm(-1) also appear and are assigned to transpolyacetylene (TPA) segments at the grain boundaries of NCD surfaces. In addition, X-ray diffraction analyses of all films presented characteristic diamond diffraction peaks corresponding to (111), (220) and (311).

Thermal rectification in thin films driven by gradient grain microstructure

NASA Astrophysics Data System (ADS)

Cheng, Zhe; Foley, Brian M.; Bougher, Thomas; Yates, Luke; Cola, Baratunde A.; Graham, Samuel

2018-03-01

As one of the basic components of phononics, thermal rectifiers transmit heat current asymmetrically similar to electronic rectifiers in microelectronics. Heat can be conducted through them easily in one direction while being blocked in the other direction. In this work, we report a thermal rectifier that is driven by the gradient grain structure and the inherent gradient in thermal properties as found in these materials. To demonstrate their thermal rectification properties, we build a spectral thermal conductivity model with complete phonon dispersion relationships using the thermophysical properties of chemical vapor deposited (CVD) diamond films which possess gradient grain microstructures. To explain the observed significant thermal rectification, the temperature and thermal conductivity distribution are studied. Additionally, the effects of temperature bias and film thickness are discussed, which shed light on tuning the thermal rectification based on the gradient microstructures. Our results show that the columnar grain microstructure makes CVD materials unique candidates for mesoscale thermal rectifiers without a sharp temperature change.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Averichkin, P. A., E-mail: P-Yugov@mail.ru; Donskov, A. A.; Dukhnovsky, M. P.

The results of using carbidsiliconoxide (a-C:SiO1{sub .5}) films with a thickness of 30–60 nm, produced by the pyrolysis annealing of oligomethylsilseskvioksana (CH{sub 3}–SiO{sub 1.5}){sub n} with cyclolinear (staircased) molecular structure, as intermediate films in the hydride vapor phase epitaxy of gallium nitride on polycrystalline CVD-diamond substrates are presented. In the pyrolysis annealing of (CH{sub 3}–SiO{sub 1.5}){sub n} films in an atmosphere of nitrogen at a temperature of 1060°C, methyl radicals are carbonized to yield carbon atoms chemically bound to silicon. In turn, these atoms form a SiC monolayer on the surface of a-C:SiO{sub 1.5} films via covalent bonding with silicon.more » It is shown that GaN islands grow on such an intermediate layer on CVD-polydiamond substrates in the process of hydride vapor phase epitaxy in a vertical reactor from the GaCl–NH{sub 3}–N{sub 2} gas mixture.« less

Non-destructive NIR-FT-raman analyses in practice. Part II. Analyses of 'jumping' crystals, photosensitive crystals and gems.

PubMed

Andreev, G N; Schrader, B; Boese, R; Rademacher, P; von Cranach, L

2001-12-01

Using an improved sampling arrangement we observed the FT Raman spectra of the different phases of a 'jumping crystal', an inositol derivative. The phase transition produced--as consequences of large changes of the unit cell constants--changes in frequency and intensity mainly of CH deformation vibrations. Photochemical reactions, usually produced with light quanta in the visible range, are not activated with the quanta from the Nd:YAG laser at 1064 nm. The Raman spectra of the 'dark' form of a dinitrobenzyl pyridine and afterwards the 'light' form, the product of its illumination in the visible range, were recorded. We could not observe changes of most bands, especially not of the NO2-vibrations; however, a new strong band appeared at 1253 cm(-1), which may be due to the expected NH-photo-isomer. Genuine gemstones and fakes can be unambiguously identified by FT Raman spectroscopy. This is especially useful for the stones whose physical properties are quite similar to those of diamonds--moissanite and zirconia. The quality of diamonds can be estimated from relative band intensities; however, this is not in complete agreement with the internationally accepted visual qualification. Synthetic diamonds produced by CVD (chemical vapor deposition) show remarkable differences from natural ones in their FT-Raman spectra.

Epitaxial growth of mosaic diamond: Mapping of stress and defects in crystal junction with a confocal Raman spectroscopy

NASA Astrophysics Data System (ADS)

Shu, Guoyang; Dai, Bing; Ralchenko, V. G.; Khomich, A. A.; Ashkinazi, E. E.; Bolshakov, A. P.; Bokova-Sirosh, S. N.; Liu, Kang; Zhao, Jiwen; Han, Jiecai; Zhu, Jiaqi

2017-04-01

We studied defects and stress distributions in mosaic epitaxial diamond film using a confocal Raman spectroscopy, with a special attention to the junction area between the crystals. The mosaics was grown by microwave plasma CVD on closely arranged (1 0 0)-oriented HPHT type Ib substrates. The width of stress affected and defect enriched region around the junction show a tendency of extending with the film thickness, from ≈40 μm on the film-substrate interface to ≈250 μm in the layer 500 μm above the substrate, as found from the mosaics analysis in cross-section. The stress field around the junction demonstrates a complex pattern, with mixed domains of tensile and compressive stress, with maximum value of σ ≈ 0.6 GPa. A similar non-uniform pattern was observed for defect distribution as well. No sign of amorphous sp2 carbon in the junction zone was revealed.

Characteristics of Diamond-Like Carbon Films Deposited on Polymer Dental Materials

NASA Astrophysics Data System (ADS)

Ohtake, Naoto; Uchi, Tomio; Yasuhara, Toshiyuki; Takashima, Mai

2012-09-01

Characterizations of diamond-like carbon (DLC) deposited on a polymer artificial tooth were performed. DLC films were deposited on dental parts made of poly(methyl methacrylate) (PMMA) resin by dc-pulse plasma chemical vapor deposition (CVD) from methane. Wear resistance test results revealed that a DLC-coated resin tooth has a very high wear resistance against tooth brushing, and endures 24 h brushing without a marked weight decrease. Cell cultivation test results show that DLC plays an important role in preventing cell death. Moreover, a biocompatibility test using a rabbit revealed that a connective tissue in the vicinity of DLC-coated PMMA is significantly thinner than that of noncoated PMMA. The numbers of inflammatory cells in the vicinity of DLC-coated and noncoated surfaces are 0 and 508 cells/mm2, respectively. These results led us to conclude that DLC films are an excellent material for use as the coating of a polymer artificial tooth in terms of not only high wear resistance but also biocompatibility.

Diffusion of helium, hydrogen and deuterium in diamond: Experiment, theory and geochemical applications

NASA Astrophysics Data System (ADS)

Cherniak, D. J.; Watson, E. B.; Meunier, V.; Kharche, N.

2018-07-01

Diffusivities of helium, deuterium and hydrogen have been characterized in diamond. Polished CVD diamond was implanted with either 3He, 2H, or 1H. Implanted samples were sealed under vacuum in silica glass capsules, and annealed in 1-atm furnaces. 3He, 2H and 1H distributions were measured with Nuclear Reaction Analysis. We obtain these Arrhenius relations: DHe = 4.00 × 10-15 exp(-138 ± 14 kJ mol-1/RT) m2 s-1. D2H = 1.02 × 10-4 exp(-262 ± 17 kJ mol-1/RT) m2 s-1. D1H = 2.60 × 10-4 exp(-267 ± 15 kJ mol-1/RT) m2 s-1. Diffusivities of 1H and 2H agree within experimental uncertainties, indicating little diffusive mass fractionation of hydrogen in diamond. To complement the experimental measurements, we performed calculations using a first-principles quantum mechanical description of diffusion in diamond within the Density Functional Theory (DFT). Differences in 1H and 2H diffusivities from calculations are found to be ∼4.5%, reflected in differences in the pre-exponential factor. This small difference in diffusivities, despite the large relative mass difference between these isotopes, is due to the fact that the atomistic process involved in the transition along the diffusion pathway is dictated by local changes to the diamond structures rather than to vibrations involving 1H/2H. This finding is consistent with the experimental results given experimental uncertainties. In contrast, calculations for helium diffusion in diamond indicate a difference of 15% between diffusivities of 3He and 4He. Calculations of diffusion distances for hydrogen using our data yield a distance of 50 μm in diamond in 300,000 years at 500 °C and ∼30 min at 1400 °C. Diffusion distances for He in diamond are shorter than for H at all temperatures above ∼350 °C, but differences increase dramatically with temperature because of the higher activation energy for H diffusion. For example, a 50 μm diffusion distance for He would be attained in ∼40 Myr at 500 °C and 400 yr at 1400 °C. For comparison, a 50 μm diffusion distance for N in diamond would require nearly 1 billion years at 1400 °C. The experimental data indicate that diamonds equilibrate with ambient H and He in the mantle on timescales brief relative to most geological processes and events. However, He diffusion in diamond is slower than in any other mineral measured to date, including other kimberlite-hosted minerals. Under some circumstances, diamond may provide information about mantle He not recoverable from other minerals. One possibility is diamonds entrained in kimberlites. Since the ascent of kimberlite from the mantle to near-surface is very rapid, entrained diamonds may retain most or all of the H and He acquired in mantle environments. Calculations using reasonable ascent rates and T-t paths indicate that He diffusive loss from kimberlite-hosted diamonds is negligible for grains of 1.0-0.2 mm radius, with fractional losses <0.15% for all ascent rates considered. If the host kimberlite magma is effectively quenched in the near-surface (or is erupted), diamonds should contain a faithful record of [He] and He isotopes from the mantle source region. Preservation of H in kimberlite-hosted diamonds is less clear-cut, with model outcomes depending critically upon rates of ascent and cooling.

Photoconductive switch package

DOEpatents

Ca[rasp, George J

2013-10-22

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the central portion to actuate the switch.

PREFACE: Science's gem: diamond science 2009 Science's gem: diamond science 2009

NASA Astrophysics Data System (ADS)

Mainwood, Alison; Newton, Mark E.; Stoneham, Marshall

2009-09-01

Natural diamond has been valued for its appearance and mechanical properties for at least two thousand years. As a gem stone diamond is unsurpassed. However, scientific work, especially in the last 20 years, has demonstrated that diamond has numerous surprising properties and many unique ones. Some of the extreme properties have been known for many years, but the true scale of diamond's other highly desirable features is still only coming to light as control in the synthesis of diamond, and hence material perfection, improves. The ultimate prize for man-made diamond is surely not in the synthesis of gem stones, but in delivering technological solutions enabled by diamond to the challenges facing our society today. If the special properties are to be exploited to their full potential, at least four crucial factors must be considered. First, there must be sufficient scientific understanding of diamond to make applications effective, efficient and economical. Secondly, the means of fabrication and control of properties have to be achieved so that diamond's role can be optimised. Thirdly, it is not enough that its properties are superior to existing materials: they must be so much better that it is worth initiating new technologies to exploit them. Finally, any substantial applications will have to address the society's major needs worldwide. The clear technology drivers for the 21st century come from the biomedical technologies, the demand for energy subject to global constraints, and the information technologies, where perhaps diamond will provide the major enabling technology [1]. The papers in this volume concern the solid state physics of diamond, and primarily concern the first two factors: understanding, and control of properties. They address many of the outstanding basic problems, such as the identification of existing defects, which affect the material's properties, both desirable and less so. Regarding future substantial applications, one paper discusses diamond's exceptional properties for quantum information processing [2], a topic on which there have been many recent papers, and where a diamond colour centre single photon source is already commercially available. Biomedical applications of diamond are recognised, partly tribological and partly electrochemical, but lie outside the present group of papers. Processing and controlling diamond surfaces and interfaces with other materials in their environment are critical steps en route to exploitation. Boron-doped diamond has already found application in electro-analysis and in the bulk oxidation of dissolved species in solution [3]. Energy-related applications—ranging from high-power electronics [3] to a potential first wall of fusion reactors [4]—are further exciting potential applications. Even small and ugly diamonds have value. Their mechanical properties [5] dominate, with significant niche applications such as thermal sinks. The major applications for diamond to date exploit only a fraction of diamond's special properties: visual for status diamonds, and mechanical for working diamonds. Diamond physics reaches well beyond the usual laboratory, to the geological diamond formation processes in the Earth's mantle. Characterization of natural gem diamonds [6, 7] is one part of the detective story that allows us to understand the conditions under which they formed. It was only half a century ago that the scientific and technological challenges of diamond synthesis were met systematically. Today, most of the recent research on diamond has concentrated on synthetics, whether created using high pressure, high temperature (HPHT) techniques or chemical vapour deposition (CVD). The HPHT synthesis of diamond has advanced dramatically [8, 9] to the extent that dislocation birefringence [10] can be largely eliminated. In silicon technology, the elimination of dislocations was a major step in microelectronics. Now, even diamond can be synthesised containing virtually no dislocations. The understanding of the critical processes that are involved in CVD diamond growth are becoming clearer. Two papers in this issue model it on a microscopic scale [11, 12], and a further two explore the practical techniques [13, 14] in order to lead to improvement in deposition techniques. Diamond is emerging as an engineering material [3] with its cost no longer regarded as prohibitive even for some large-scale uses, such as the fusion reactor first wall. It is striking how few useful dopants can be put into diamond in a controlled way. The studies reported here, whether theory or experiment, concentrate on phosphorus [14] as the donor, and demonstrate that boron (although deep in semiconductor terms,) can act as the acceptor [3] in practical devices. Other impurities, with deeper levels, such as nitrogen [15], with the muon as an honorary hydrogen [16], are studied in depth. Here, many of the characterization techniques developed over several decades have been brought to bear, to attempt to quantify impurities and defects and ultimately assist in improving the crystal quality [17, 18, 15]. However, further, more novel techniques such as reflection anisotropy spectroscopy [19] and luminescence lifetime mapping [20] have been introduced to diamond in this issue, and one can see how such techniques might play a crucial role in areas such as systems for quantum information processing. The presence and migration of radiation damage defects [21, 22], vacancies and interstitials, and vacancy clusters can dramatically influence the exploitable properties of diamond [23, 24]. It is now apparent that charge traps not only impact on electrical properties, but also on the colour of diamond and that thermo-chromic and photo-chromic effects are more common than previously thought [25, 23]. Combinations, like the negatively charged nitrogen-vacancy centre, have proved impressive in quantum information studies [26]. But diamond has yet to benefit from the sort of dopant engineering that has helped silicon to become ubiquitous. It is becoming clear that because of the deep ionisation energies of the dopants that can be incorporated into diamond, conventional semiconductor physics can only be applied at high temperatures; rather different technologies have to be exploited to ensure that diamond's potential for devices is fulfilled. There are technical improvements which need to be made: the elimination of defects that trap carriers, cause de-coherence, affect the colour or strength, or have other serious effects in the relevant application, and the development of robust ohmic contacts [27]. The material developments of the last 50 years include silicon becoming the semiconductor of choice, many new and better-developed polymers, the transformation of communications by silica-based optical fibres, and the emergence of synthetic diamond. Could diamond's special virtues yield major new opportunities? Its optical properties are exceptional, usually in desirable ways (high refractive indices can create indirect problems). The mechanical properties are truly outstanding, again usually in desirable ways (adhesion can be challenging). The thermal properties are similarly exceptional, with a thermal conductivity that exceeds copper. Diamond withstands aggressive environments, including extremes of pH. Its carrier mobility can be phenomenal, and electron emission can be excellent. Moreover, diamond can be compatible with silicon electronics, even if the involvement of a second material is inconvenient. Here the problems start. Even limited developments could be significant. For instance, the ability to control the populations of the various N, B, P and vacancy centres would open up potentially unique optoelectronic and spintronic opportunities. Control of diamond's properties is difficult, but this is where basic research can help (using all the techniques explored in this issue, and more). It is barely practical to create n-type diamond, but unipolar devices, exploiting excellent quality boron doped p-type material, can be designed [3]. Electrical contacts can be tricky to fabricate, but progress is being made here [3, 27]. Diamond is perceived as unacceptably expensive, but for a high-quality device for an exceptional environment, this is not a problem. Carbon-based electronic materials are strikingly diverse. They include diamond, graphite, nanotubes and buckyball structures, amorphous carbons, and nanodiamond. Add hydrogen and one has a range of diamond-like carbons and the wealth of organics. Such carbon-based materials include small molecules and polymers: impressive insulators, semiconducting and conducting polymers, switchable forms, superconducting and magnetic forms, and some with the highest electrical conductivities of any material. Diamond-like carbons can have controllable mechanical properties from the viscoelastic to the highly rigid. Photochemistry brings opportunities for novel processing methods. Even water-based processing may sometimes be possible (alas, not for diamond), and additional tools like self-organisation of organic molecules on surfaces have been demonstrated. The best carbons have impressive, sometimes supreme, performances, including the mobility and optical properties of diamond, spin-conserving transport in carbon nanotubes, and electron emission. For almost all measures of performance, there is some carbon-based material that performs better than silicon. Might hybrid carbon-based materials be more successful even than silicon [28]? Should we think less about 'diamond' and more about the integration of diamond as one component of carbon electronics? Device fabrication needs lithography optics and resists, and processing at the anticipated smaller scales may well exploit new electronic excitation methods. Alternative dielectrics and interconnect materials introduce new compatibility issues, and there are further varied constraints from displays, spintronic components, electron emitters or transparent conductors. Could the many carbon-based materials with interesting functional properties lead to a new class of alternative systems? This collection of papers was brought together to celebrate 60 years of conferences sponsored by the De Beers Group of companies on the science and technology of diamond. The transformation of diamond science and technology over those 60 years can be seen in varied ways. First, there has been a series of books stimulated by the conferences [29-31] complementing numerous other more recent texts on diamond (e.g. [32]). These show a striking evolution from the early pioneering studies of tribology, radiation damage, and thermal and optical properties to a wider range of electronic properties, spectroscopies, and characterization from the macroscopic to nanoscopic scales, as well as the now almost universal dialogue between experiment and theory. Secondly, new experimental and theoretical techniques have emerged, many of which are featured in the papers in this issue. Thirdly, there is a range of new technologies only made possible because of the catalytic role of the conferences. These include the spectroscopies that distinguish natural from synthetic or treated diamonds in a way that earns customer confidence. There are also new customer products, like speaker domes, where success has depended on the understanding of mechanical properties at a level not commonly available. Potentially big applications, like the fusion reactor's first wall, will follow on from early radiation damage studies. Fourthly, the young scientists who have been supported over the years have now made their way in many fields, not just diamond research, but certainly including technologies that use diamond. The sponsorship of science in this field has benefited both those supported and those who provide that support. Finally, we see serious thoughts about what might be the big new technologies of the 21st century, since these will need a fundamental understanding of materials properties and their control. There has been exceptional progress in this area, in specimen sizes, quality, and performance. These massive improvements in materials availability create opportunities for the major technological applications in the energy, environment, health and information technologies that will surely drive the big industrial expansions over the next decades. References [1] Stoneham A M 2007 Thinking about diamond (ed P Bergonzo, R Gat, R B Jackman and C E Nebel) MRS Proc. 956 1-10 [2] Stoneham A M 2008 Future Perspectives for Diamond for Physics and Applications of CVD Diamond ed S Koizumi, M Nesladek and C E Nebel (New York: Wiley-VCH) [3] Balmer R S et al 2009 J. Phys.: Condens. Matter 21 364221 [4] Stoneham A M, Matthews J R and Ford I J 2004 J. Phys.: Condens. Matter 16 S2597 [5] Liang Q, Yan C, Meng Y, Lai J, Krasnicki S, Mao H and Hemley R J 2009 J. Phys.: Condens. Matter 21 364215 [6] Stachel T and Harris J W 2009 J. Phys.: Condens. Matter 21 364206 [7] McNeill J, Pearson D G, Klein-BenDavid O, Nowell G M, Ottley C J and Chinn I 2009 J. Phys.: Condens. Matter 21 364207 [8] Martineau P M, Gaukroger M P, Guy K B, Lawson S C, Twitchen D J, Friel I, Hansen J O, Summerton G C, Addison T P G and Burns R 2009 J. Phys.: Condens. Matter 21 364205 [9] Burns R C et al 2009 J. Phys.: Condens. Matter 21 364224 [10] Pinto H and Jones R 2009 J. Phys.: Condens. Matter 21 364220 [11] May P W, Allan N L, Ashfold M N R, Richley J C and Mankelevich Yu A 2009 J. Phys.: Condens. Matter 21 364203 [12] Butler J E, Mankelevich Yu A, Cheesman A, Ma J and Ashfold N R 2009 J. Phys.: Condens. Matter 21 364201 [13] Silva F, Hassouni K, Bonnin X and Gicquel A 2009 J. Phys.: Condens. Matter 21 364202 [14] Haenen K, Lazea A, Barjon J, D'Haen J, Habka N, Teraji T, Koizumi S and Mortet V 2009 J. Phys.: Condens. Matter 21 364204 [15] Felton S, Cann B L, Edmonds A M, Liggins S, Cruddace R J, Newton M E, Fisher D and Baker J M 2009 J. Phys.: Condens. Matter 21 364212 [16] Etmimi K M, Goss J P, Briddon P R and Gseia E M 2009 J. Phys.: Condens. Matter 21 364211 [17] Moore M 2009 J. Phys.: Condens. Matter 21 364217 [18] Maki J M, Tuomisto F, Kelly C J, Fisher D and Martineau P M 2009 J. Phys.: Condens. Matter 21 364216 [19] Schwitters M, Martin D S, Unsworth P, Farrell T, Butler J E and Weightman P 2009 J. Phys.: Condens. Matter 21 364218 [20] Liaugaudas G, Collins A T, Suhling K, Davies G and Heintzmann R 2009 J. Phys.: Condens. Matter 21 364210 [21] Collins A T and Kiflawi I 2009 J. Phys.: Condens. Matter 21 364209 [22] Steeds J W, Sullivan W, Wotherspoon A and Hayes J M 2009 J. Phys.: Condens. Matter 21 364219 [23] Fisher D, Sibley S J and Kelly C J 2009 J. Phys.: Condens. Matter 21 364213 [24] Bangert U, Barnes R, Gass M H, Bleloch A L, and Godfrey I S 2009 J. Phys.: Condens. Matter 21 364208 [25] Khan R U A, Martineau P M, Cann B L, Newton M E and Twitchen D J 2009 J. Phys.: Condens. Matter 21 364214 [26] Stoneham A M, Harker A H and Morley G W 2009 J. Phys.: Condens. Matter 21 364222 [27] Evans D A, Roberts O R, Williams G T, Vearey-Roberts A R, Bain F, Evans S, Langstaff D and Twitchen D J 2009 J. Phys.: Condens. Matter 21 364223 [28] Stoneham A M 2004 Nat. Mater. 3 3 [29] Berman R (ed) 1965 Physical Properties of Diamond (Oxford: Clarendon) [30] Field J E (ed) 1979 The Properties of Diamond (London: Academic) [31] Field J E (ed) 1992 The Properties of Natural and Synthetic Diamond (London: Academic) [32] Sussmann R S (ed) 2009 CVD Diamond for Electronic Devices and Sensors (Wiley Series in Materials for Electronic and Optoelectronic Applications) (New York: Wiley)

High pressure luminescence spectra of CaMoO4:Ln3+ (Ln = Pr, Tb)

NASA Astrophysics Data System (ADS)

Mahlik, S.; Behrendt, M.; Grinberg, M.; Cavalli, E.; Bettinelli, M.

2013-03-01

Photoluminescence spectra and luminescence kinetics of pure CaMoO4 and CaMoO4 doped with Ln3+ (Ln = Pr or Tb) are presented. The spectra were obtained at high hydrostatic pressure up to 240 kbar applied in a diamond anvil cell. At ambient pressure undoped and doped samples exhibit a broad band emission extending between 380 and 700 nm with a maximum at 520 nm attributed to the {{MoO}}_{4}^{2-} luminescence. CaMoO4 doped with Pr3+ or Tb3+ additionally yields narrow emission lines related to f-f transitions. The undoped CaMoO4 crystal was characterized by a strong MoO{}_{4}^{2-} emission up to 240 kbar. In the cases of CaMoO4:Pr3+ and CaMoO4:Tb3+, high hydrostatic pressure caused quenching of Pr3+ and Tb3+ emission, and this effect was accompanied by a strong shortening of the luminescence lifetime. In doped samples, CaMoO4:Pr3+ and CaMoO4:Tb3+, quenching of the emission band attributed to {{MoO}}_{4}^{2-} was also observed, and at pressure above 130 kbar this luminescence was totally quenched. The effects mentioned above were related to the influence of the praseodymium (terbium) trapped exciton PTE (ITE—impurity trapped exciton) on the efficiency of the Pr3+ (Tb3+) and {{MoO}}_{4}^{2-} emissions.

Photoconductive switch package

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caporaso, George J.

2015-10-27

A photoconductive switch is formed of a substrate that has a central portion of SiC or other photoconductive material and an outer portion of cvd-diamond or other suitable material surrounding the central portion. Conducting electrodes are formed on opposed sides of the substrate, with the electrodes extending beyond the central portion and the edges of the electrodes lying over the outer portion. Thus any high electric fields produced at the edges of the electrodes lie outside of and do not affect the central portion, which is the active switching element. Light is transmitted through the outer portion to the centralmore » portion to actuate the switch.« less

Mo doped DLC nanocomposite coatings with improved mechanical and blood compatibility properties

NASA Astrophysics Data System (ADS)

Tang, X. S.; Wang, H. J.; Feng, L.; Shao, L. X.; Zou, C. W.

2014-08-01

Mo (molybdenum) doped diamond like carbon (Mo-DLC) coatings with improved mechanical and blood compatibility properties were deposited by closed field unbalanced magnetron sputtering. The undoped and Mo-doped DLC coatings were analyzed by various characterization techniques such as Raman spectra, Atomic force microscopy, and temperature-dependent frictional wear testing. The results showed that the Mo-DLC coating with low Mo concentration was a effective protective coating with reduced residual stress and increased cohesive strength, and kept good wear resistance at the ambient temperature of 500 °C. The blood compatibility of Mo-DLC coatings was investigated by platelet adhesion. The results showed that the amount of thrombus on the Mo-DLC nanocomposite coatings was much less than that of thrombus on pyrolytic carbon films. The Mo-DLC nanocomposite coatings would be a new kind of promising materials applied to artificial heart valve and endovascula stent.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pomorski, Michal; Mer-Calfati, Christine; Foulon, Francois

Diamond exhibits a combination of properties which makes it attractive for neutron detection in hostile conditions. In the particular case of detection in a nuclear reactor, it is resilient to radiation, exhibits a natural low sensitivity to gamma rays, and its small size (as compared with that of gas ionisation chambers) enables fluency monitoring with a high position resolution. We report here on the use of synthetic CVD diamond as a solid state micro-fission chamber with U-235 converting material for in-core thermal neutron monitoring. Two types of thin diamond detectors were developed for this application. The first type of detectormore » is fabricated using thin diamond membrane obtained by etching low-cost commercially available single crystal CVD intrinsic diamond, so called 'optical grade' material. Starting from a few hundred of micrometre thick samples, the sample is sliced with a laser and then plasma etched down to a few tenths of micrometre. Here we report the result obtained with a 17 μm thick device. The detection surface of this detector is equal to 1 mm{sup 2}. Detectors with surfaces up to 1 cm{sup 2} can be fabricated with this technique. The second type of detector is fabricated by growing successively two thin films of diamond, by the microwave enhanced chemical vapour deposition technique, on HPHT single crystal diamond. A first, a film of boron doped (p+) single crystal diamond, a few microns thick, is deposited. Then a second film of intrinsic diamond with a thickness of a few tens of microns is deposited. This results in a P doped, Intrinsic, Metal structure (PIM) structure in which the intrinsic volume id the active part of the detector. Here we report the results obtained with a 20 μm thick intrinsic whose detection surface is equal to 0.5 mm{sup 2}, with the possibility to enlarge the surface of the detector up to 1 cm{sup 2}. These two types of detector were tested at the VR-1 research reactor at the Czech Technical University in Prague. The Training Reactor VR-1 is a pool type (light water) reactor based on UO{sub 2} low enriched uranium. It has a nominal power of 1 kW, and can be operated for a short period up to 5 kW. The arrangement of the reactor pool reactor facilitates access to the core, setting and removal of various experimental samples and detectors, and safe and easy handling of fuel assemblies. The reactor is equipped with two horizontal channels (radial and tangential) and 10 vertical channels, of varying diameters, which can be loaded into various core positions, and one pneumatic transfer system. It is also equipped with several specifically designed educational instrumentation systems that can be used to supply complementary measurements and characterization around the reactor. The reactor is operated by the Department of Nuclear Reactors of the Faculty of Nuclear Sciences and Physical Engineering of the Czech Technical University in Prague. The two detectors were placed in-core through one of the vertical insertion channel. They were coupled to remote placed (5 m BNC cable) classical nuclear charge sensitive electronics. Detection properties of both sensors, including: pulse height spectra of U-235 fission fragments (response linearity with neutron flux, count rate, gamma background, were evaluated varying the power of the reactor from 0.005 W to 500 W. The evolution of the counting rate of the thinned optical grade detector as a function of counting rate of a gas ionization chamber used currently for reactor monitoring shows the very good linearity of the detector over the 5 decades. Similar results were obtained with the PIM detector. Additionally fast transient current signals of the detectors were recorded on a digital storage oscilloscope (DSO) using broad-band amplifier and with a simple bias-T, showing potential use of such sensors for neutron counting with no need of an amplification stage, since non-amplified signals from fission fragments exceeded 4 mV in amplitude. Therefore, one can think of simple neutron counting system by feeding diamond detectors signals directly to the low threshold discriminators. The results obtained on the VR1 will be described and discussed in detail in the paper and associated presentation. The results demonstrate that diamond micro-fission chambers can be used for in-core neutron monitoring, where robust, simple and compact devices are required.« less

CIP (cleaning-in-place) stability of AlGaN/GaN pH sensors.

PubMed

Linkohr, St; Pletschen, W; Schwarz, S U; Anzt, J; Cimalla, V; Ambacher, O

2013-02-20

The CIP stability of pH sensitive ion-sensitive field-effect transistors based on AlGaN/GaN heterostructures was investigated. For epitaxial AlGaN/GaN films with high structural quality, CIP tests did not degrade the sensor surface and pH sensitivities of 55-58 mV/pH were achieved. Several different passivation schemes based on SiO(x), SiN(x), AlN, and nanocrystalline diamond were compared with special attention given to compatibility to standard microelectronic device technologies as well as biocompatibility of the passivation films. The CIP stability was evaluated with a main focus on the morphological stability. All stacks containing a SiO₂ or an AlN layer were etched by the NaOH solution in the CIP process. Reliable passivations withstanding the NaOH solution were provided by stacks of ICP-CVD grown and sputtered SiN(x) as well as diamond reinforced passivations. Drift levels about 0.001 pH/h and stable sensitivity over several CIP cycles were achieved for optimized sensor structures. Copyright © 2012 Elsevier B.V. All rights reserved.

Influence of Fiber Orientation on Single-Point Cutting Fracture Behavior of Carbon-Fiber/Epoxy Prepreg Sheets.

PubMed

Wei, Yingying; An, Qinglong; Cai, Xiaojiang; Chen, Ming; Ming, Weiwei

2015-10-02

The purpose of this article is to investigate the influences of carbon fibers on the fracture mechanism of carbon fibers both in macroscopic view and microscopic view by using single-point flying cutting method. Cutting tools with three different materials were used in this research, namely, PCD (polycrystalline diamond) tool, CVD (chemical vapor deposition) diamond thin film coated carbide tool and uncoated carbide tool. The influence of fiber orientation on the cutting force and fracture topography were analyzed and conclusions were drawn that cutting forces are not affected by cutting speeds but significantly influenced by the fiber orientation. Cutting forces presented smaller values in the fiber orientation of 0/180° and 15/165° but the highest one in 30/150°. The fracture mechanism of carbon fibers was studied in different cutting conditions such as 0° orientation angle, 90° orientation angle, orientation angles along fiber direction, and orientation angles inverse to the fiber direction. In addition, a prediction model on the cutting defects of carbon fiber reinforced plastic was established based on acoustic emission (AE) signals.

Thermal Characterization for a Modular 3-D Multichip Module

NASA Technical Reports Server (NTRS)

Fan, Mark S.; Plante, Jeannette; Shaw, Harry

2000-01-01

NASA Goddard Space Flight Center has designed a high-density modular 3-D multichip module (MCM) for future spaceflight use. This MCM features a complete modular structure, i.e., each stack can be removed from the package without damaging the structure. The interconnection to the PCB is through the Column Grid Array (CGA) technology. Because of its high-density nature, large power dissipation from multiple layers of circuitry is anticipated and CVD diamond films are used in the assembly for heat conduction enhancement. Since each stacked layer dissipates certain amount of heat, designing effective heat conduction paths through each stack and balancing the heat dissipation within each stack for optimal thermal performance become a challenging task. To effectively remove the dissipated heat from the package, extensive thermal analysis has been performed with finite element methods. Through these analyses, we are able to improve the thermal design and increase the total wattage of the package for maximum electrical performance. This paper provides details on the design-oriented thermal analysis and performance enhancement. It also addresses issues relating to contact thermal resistance between the diamond film and the metallic heat conduction paths.

Synthesis of Diamond-Like Carbon Films on Planar and Non-Planar Geometries by the Atmospheric Pressure Plasma Chemical Vapor Deposition Method

NASA Astrophysics Data System (ADS)

Noborisaka, Mayui; Hirako, Tomoaki; Shirakura, Akira; Watanabe, Toshiyuki; Morikawa, Masashi; Seki, Masaki; Suzuki, Tetsuya

2012-09-01

Diamond-like carbon (DLC) films were synthesized by the dielectric barrier discharge-based plasma deposition at atmospheric pressure and their hardness and gas barrier properties were measured. A decrease in size of grains and heating substrate temperature improved nano-hardness up to 3.3 GPa. The gas barrier properties of DLC-coated poly(ethylene terephthalate) (PET) sheets were obtained by 3-5 times of non-coated PET with approximately 0.5 µm in film thickness. The high-gas-barrier DLC films deposited on PET sheets are expected to wrap elevated bridge of the super express and prevent them from neutralization of concrete. We also deposited DLC films inside PET bottles by the microwave surface-wave plasma chemical vapor deposition (CVD) method at near-atmospheric pressure. Under atmospheric pressure, the films were coated uniformly inside the PET bottles, but did not show high gas barrier properties. In this paper, we summarize recent progress of DLC films synthesized at atmospheric pressure with the aimed of food packaging and concrete pillar.

Influence of Fiber Orientation on Single-Point Cutting Fracture Behavior of Carbon-Fiber/Epoxy Prepreg Sheets

PubMed Central

Wei, Yingying; An, Qinglong; Cai, Xiaojiang; Chen, Ming; Ming, Weiwei

2015-01-01

The purpose of this article is to investigate the influences of carbon fibers on the fracture mechanism of carbon fibers both in macroscopic view and microscopic view by using single-point flying cutting method. Cutting tools with three different materials were used in this research, namely, PCD (polycrystalline diamond) tool, CVD (chemical vapor deposition) diamond thin film coated carbide tool and uncoated carbide tool. The influence of fiber orientation on the cutting force and fracture topography were analyzed and conclusions were drawn that cutting forces are not affected by cutting speeds but significantly influenced by the fiber orientation. Cutting forces presented smaller values in the fiber orientation of 0/180° and 15/165° but the highest one in 30/150°. The fracture mechanism of carbon fibers was studied in different cutting conditions such as 0° orientation angle, 90° orientation angle, orientation angles along fiber direction, and orientation angles inverse to the fiber direction. In addition, a prediction model on the cutting defects of carbon fiber reinforced plastic was established based on acoustic emission (AE) signals. PMID:28793597

Resistance to protein adsorption and adhesion of fibroblasts on nanocrystalline diamond films: the role of topography and boron doping.

PubMed

Alcaide, María; Papaioannou, Stavros; Taylor, Andrew; Fekete, Ladislav; Gurevich, Leonid; Zachar, Vladimir; Pennisi, Cristian Pablo

2016-05-01

Boron-doped nanocrystalline diamond (BNCD) films exhibit outstanding electrochemical properties that make them very attractive for the fabrication of electrodes for novel neural interfaces and prosthetics. In these devices, the physicochemical properties of the electrode materials are critical to ensure an efficient long-term performance. The aim of this study was to investigate the relative contribution of topography and doping to the biological performance of BNCD films. For this purpose, undoped and boron-doped NCD films were deposited on low roughness (LR) and high roughness (HR) substrates, which were studied in vitro by means of protein adsorption and fibroblast growth assays. Our results show that BNCD films significantly reduce the adsorption of serum proteins, mostly on the LR substrates. As compared to fibroblasts cultured on LR BNCD films, cells grown on the HR BNCD films showed significantly reduced adhesion and lower growth rates. The mean length of fibronectin fibrils deposited by the cells was significantly increased in the BNCD coated substrates, mainly in the LR surfaces. Overall, the largest influence on protein adsorption, cell adhesion, proliferation, and fibronectin deposition was due to the underlying sub-micron topography, with little or no influence of boron doping. In perspective, BNCD films displaying surface roughness in the submicron range may be used as a strategy to reduce the fibroblast growth on the surface of neural electrodes.

Further improvement of mechanical and tribological properties of Cr-doped diamond-like carbon nanocomposite coatings by N codoping

NASA Astrophysics Data System (ADS)

Zou, Changwei; Xie, Wei; Tang, Xiaoshan

2016-11-01

In this study, the effects of nitrogen codoping on the microstructure and mechanical properties of Cr-doped diamond-like carbon (DLC) nanocomposite coatings were investigated in detail. Compared with undoped DLC coatings, the Cr-DLC and N/Cr-DLC coatings showed higher root-mean-square (RMS) roughness values. However, from the X-ray photoelectron spectroscopy (XPS) and Raman results, the fraction of sp2 carbon bonds of N/Cr-DLC coatings increased with increasing N content, which indicated the graphitization of the coatings. The hardness and elastic modulus of N/Cr-DLC coatings with 1.8 at. % N were about 26.8 and 218 GPa, respectively. The observed hardness increase with N codoping was attributed to the incorporation of N in the C network along with the formation of CrC(N) nanoparticles, as confirmed from the transmission electron microscopy (TEM) results. The internal stress markedly decreased from 0.93 to 0.32 GPa as the N content increased from 0 to 10.3 at. %. Furthermore, N doping significantly improved the high-temperature dry friction behavior of DLC coatings. The friction coefficient of N/Cr-DLC coatings with 8.0 and 10.3 at. % N was kept at about 0.2 during the overall sliding test at 500 °C. These results showed that appropriate N doping could promote the mechanical and tribological properties of Cr-DLC nanocomposite coatings.

Investigation of chemical vapour deposition diamond detectors by X-ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

NASA Astrophysics Data System (ADS)

Olivero, P.; Manfredotti, C.; Vittone, E.; Fizzotti, F.; Paolini, C.; Lo Giudice, A.; Barrett, R.; Tucoulou, R.

2004-10-01

Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the large hadron collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro-beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitative study of the inhomogeneity of the charge transport parameter defined as the product of mobility and lifetime for both electron and holes. XBIL represents a technique complementary to ion beam induced luminescence (IBIL), which has already been used by our group, since X-ray energy loss profile in the material is different from that of MeV ions. X-ray induced luminescence maps have been performed simultaneously with induced photocurrent maps, to correlate charge transport and induced luminescence properties of diamond. Simultaneous XBICC and XBIL maps exhibit features of partial complementarity that have been interpreted on the basis of considerations on radiative and non-radiative recombination processes which compete with charge transport efficiency.

Preface: phys. stat. sol. (a) 203/12

NASA Astrophysics Data System (ADS)

Jackman, Richard B.; Nesládek, Milo; Haenen, Ken

2006-09-01

The 30 papers gathered in this issue of physica status solidi (a) give a thorough overview over different topics that were presented during the 11th edition of the International Workshop on Surface and Bulk Defects in CVD Diamond Films (SBDD), which took place from 22 to 24 February 2006, at the Hasselt University in Diepenbeek-Hasselt, Belgium. Since its start more than 10 years ago, the SBDD Workshop has grown into a well-established, yearly early bird meeting place, addressing new emerging science related to the progress in the CVD diamond field. The 10 invited lectures, 29 contributed oral presentations and 26 posters were presented in several sessions during an intense two and a half day long meeting.The number of participants reached 115 this year with participants coming from fifteen countries: Austria, Belgium, Czech Republic, France, Germany, Israel, Italy, Japan, Mexico, Poland, Russia, Singapore, Slovak Republic, Sweden, UK, and USA. The mixture of young and established scientists, including a great proportion of students, made this meeting a hot spot of lively discussions on a wide range of scientific subjects, not only during the meeting itself, but also at several occasions throughout many social events offered by the hospitality of the city of Hasselt.It stands for itself that the workshop would not have been possible without the support of many people and institutions. For financial aid we are especially indebted to the Scientific Research Community Surface Modification of Materials of the F.W.O.-Vlaanderen (Belgium), whose incessant support plays an important role in keeping this meeting going. We also thank the Hasselt University for offering the lecture hall and infrastructure facilities and Seki Technotron Corp. for sponsoring the poster reception and their presence with a table top exhibit. Finally we highly appreciate the active approach of the editorial staff of physica status solidi in this conference and would like to thank most notably Stefan Hildebrandt, Ron Schulz-Rheinländer, Christoph Lellig, and Julia Hübner, for their excellent and patient work, bringing the number of successfully published proceedings of SBDD in pss (a) up to 8 already!To finish, we would all like to invite you to the 12th edition of the SBDD series, newly renamed as Hasselt Diamond Workshop, to be held at its established location of Diepenbeek-Hasselt. We look forward meeting you again at SBDD XII in 2007:Hasselt Diamond Workshop - SBDD XII28 February-2 March 2007Hasselt University, Diepenbeek-Hasselt, Belgiumhttp://www.imo.uhasselt.be/SBDD2007London, Paris, Hasselt, August 2006

Growth of boron doped hydrogenated nanocrystalline cubic silicon carbide (3C-SiC) films by Hot Wire-CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pawbake, Amit; Tata Institute of Fundamental Research, Colaba, Mumbai 400 005; Mayabadi, Azam

Highlights: • Boron doped nc-3C-SiC films prepared by HW-CVD using SiH{sub 4}/CH{sub 4}/B{sub 2}H{sub 6}. • 3C-Si-C films have preferred orientation in (1 1 1) direction. • Introduction of boron into SiC matrix retard the crystallanity in the film structure. • Film large number of SiC nanocrystallites embedded in the a-Si matrix. • Band gap values, E{sub Tauc} and E{sub 04} (E{sub 04} > E{sub Tauc}) decreases with increase in B{sub 2}H{sub 6} flow rate. - Abstract: Boron doped nanocrystalline cubic silicon carbide (3C-SiC) films have been prepared by HW-CVD using silane (SiH{sub 4})/methane (CH{sub 4})/diborane (B{sub 2}H{sub 6}) gasmore » mixture. The influence of boron doping on structural, optical, morphological and electrical properties have been investigated. The formation of 3C-SiC films have been confirmed by low angle XRD, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Fourier transform infra-red (FTIR) spectroscopy and high resolution-transmission electron microscopy (HR-TEM) analysis whereas effective boron doping in nc-3C-SiC have been confirmed by conductivity, charge carrier activation energy, and Hall measurements. Raman spectroscopy and HR-TEM analysis revealed that introduction of boron into the SiC matrix retards the crystallanity in the film structure. The field emission scanning electron microscopy (FE-SEM) and non contact atomic force microscopy (NC-AFM) results signify that 3C-SiC film contain well resolved, large number of silicon carbide (SiC) nanocrystallites embedded in the a-Si matrix having rms surface roughness ∼1.64 nm. Hydrogen content in doped films are found smaller than that of un-doped films. Optical band gap values, E{sub Tauc} and E{sub 04} decreases with increase in B{sub 2}H{sub 6} flow rate.« less

High-power 1.25 µm InAs QD VECSEL based on resonant periodic gain structure

NASA Astrophysics Data System (ADS)

Albrecht, Alexander R.; Rotter, Thomas J.; Hains, Christopher P.; Stintz, Andreas; Xin, Guofeng; Wang, Tsuei-Lian; Kaneda, Yushi; Moloney, Jerome V.; Malloy, Kevin J.; Balakrishnan, Ganesh

2011-03-01

We compare an InAs quantum dot (QD) vertical external-cavity surface-emitting laser (VECSEL) design consisting of 4 groups of 3 closely spaced QD layers with a resonant periodic gain (RPG) structure, where each of the 12 QD layers is placed at a separate field antinode. This increased the spacing between the QDs, reducing strain and greatly improving device performance. For thermal management, the GaAs substrate was thinned and indium bonded to CVD diamond. A fiber-coupled 808 nm diode laser was used as pump source, a 1% transmission output coupler completed the cavity. CW output powers over 4.5 W at 1250 nm were achieved.

Nucleation and growth studies of crystalline carbon phases at nanoscale

NASA Astrophysics Data System (ADS)

Mani, Radhika C.

Understanding the nucleation and early stage growth of crystals from the vapor phase is important for realizing large-area single-crystal quality films, controlled synthesis of nanocrystals, and the possible discovery of new phases of materials. Carbon provides the most interesting system because all its known crystalline phases (diamond, graphite and carbon nanotubes) are technologically important materials. Hence, this dissertation is focused on studying the nucleation and growth of carbon phases synthesized from the vapor phase. Nucleation experiments were performed in a microwave plasma chemical vapor deposition (CVD) reactor, and the resulting carbon nanocrystals were analyzed primarily using electron nanodiffraction and Raman spectroscopy. These studies led to the discovery of two new crystalline phases of sp 3 carbon other than diamond: face-centered and body-centered cubic carbon. Nanodiffraction results revealed possible hydrogen substitution into diamond-cubic lattices, indicating that these new phases probably act as intermediates in diamond nucleation. Nucleation experiments also led to the discovery of two new morphologies for sp2 carbon: nanocrystals of graphite and tapered, hollow 1-D structures termed here as "carbon nanopipettes". A Kinetic Monte Carlo (KMC) algorithm was developed to simulate the growth of individual diamond crystals from the vapor phase, starting with small clusters of carbon atoms (or seeds). Specifically, KMC simulations were used to distinguish the kinetic rules that give rise to a star-shaped decahedral morphology compared to decahedral crystals. KMC simulations revealed that slow adsorption on the {111} step-propagation sites compared to kink sites leads to star-decahedral crystals, and higher adsorption leads to decahedral crystals. Since the surfaces of the nanocrystals of graphite and nanopipettes were expected to be composed primarily of edge-plane sites, the electrochemical behavior of both these materials were investigated with compounds requiring chemisorption, specifically biologically important species. Both these materials exhibited a stable and reversible voltammetric behavior for dopamine (a neurotransmitter) similar to that of graphite edge planes. Furthermore, a simple bottom-up concept utilizing the tapered morphology of the nanopipettes was developed to assemble a nanoarray sensor for fast cyclic voltammetry. In summary, the main outcomes of this dissertation include: the discovery of new crystalline carbon phases, understanding kinetic faceting of multiply twinned diamond crystals and tapered morphologies of carbon nanotubes, and development of new electrode materials based on sp2 carbon nanocrystals for sensing biologically important analytes.

Diamond Heat-Spreader for Submillimeter-Wave Frequency Multipliers

NASA Technical Reports Server (NTRS)

Lin, Robert H.; Schlecht, Erich T.; Chattopadhyay, Goutam; Gill, John J.; Mehdi, Imran; Siegel, Peter H.; Ward, John S.; Lee, Choonsup; Thomas, Bertrand C.; Maestrini, Alain

2010-01-01

The planar GaAs Shottky diode frequency multiplier is a critical technology for the local oscillator (LO) for submillimeter- wave heterodyne receivers due to low mass, tenability, long lifetime, and room-temperature operation. The use of a W-band (75-100 GHz) power amplifier followed by a frequency multiplier is the most common for submillimeter-wave sources. Its greatest challenge is to provide enough input power to the LO for instruments onboard future planetary missions. Recently, JPL produced 800 mW at 92.5 GHz by combining four MMICs in parallel in a balanced configuration. As more power at W-band is available to the multipliers, their power-handling capability be comes more important. High operating temperatures can lead to degradation of conversion efficiency or catastrophic failure. The goal of this innovation is to reduce the thermal resistance by attaching diamond film as a heat-spreader on the backside of multipliers to improve their power-handling capability. Polycrystalline diamond is deposited by hot-filament chemical vapor deposition (CVD). This diamond film acts as a heat-spreader to both the existing 250- and 300-GHz triplers, and has a high thermal conductivity (1,000-1,200 W/mK). It is approximately 2.5 times greater than copper (401 W/mK) and 20 times greater than GaAs (46 W/mK). It is an electrical insulator (resistivity approx. equals 10(exp 15) Ohms-cm), and has a low relative dielectric constant of 5.7. Diamond heat-spreaders reduce by at least 200 C at 250 mW of input power, compared to the tripler without diamond, according to thermal simulation. This superior thermal management provides a 100-percent increase in power-handling capability. For example, with this innovation, 40-mW output power has been achieved from a 250-GHz tripler at 350-mW input power, while the previous triplers, without diamond, suffered catastrophic failures. This breakthrough provides a stepping-stone for frequency multipliers-based LO up to 3 THz. The future work for this design is to apply the high output power from both the 250 and 300 GHz to multiple chains in order to generate milliwatts at 2.3 THz. Using the first generation of results for this innovation, 40 mW of output power were produced from a 240-GHz tripler at 350-mW input power, and 27- mW output power was produced from a 300-GHz tripler at 408-mW input power. This is two times higher than the current state-of-the-art output power capability. A finite-element thermal simulation also shows that 30-microns thick diamond dropped the temperature of the anodes by at least 200 C.

Studies on nanosecond 532nm and 355nm and ultrafast 515nm and 532nm laser cutting super-hard materials

NASA Astrophysics Data System (ADS)

Zhang, Jie; Tao, Sha; Wang, Brian; Zhao, Jay

2017-02-01

In this paper, micro-processing of three kinds of super-hard materials of poly-crystal diamond (PCD)/tungsten-carbide (WC), CVD-diamond and cubic boron nitride (CNB) has been systematically studied using nanosecond laser (532nm and 355nm), and ultrafast laser (532nm and 515nm). Our purpose is to investigate a full laser micro-cutting solution to achieve a ready-to-use cutting tool insert (CTI). The results show a clean cut with little burns and recasting at edge. The cutting speed of 2-10mm/min depending on thickness was obtained. The laser ablation process was also studied by varying laser parameters (wavelength, pulse width, pulse energy, repetition rate) and tool path to improve cutting speed. Also, studies on material removal efficiency (MRE) of PCD/WC with 355nm-ns and 515nm-fs laser as a function of laser fluence show that 355nm-ns laser is able to achieve higher MRE for PCD and WC. Thus, ultrafast laser is not necessarily used for superhard material cutting. Instead, post-polishing with ultrafast laser can be used to clean cutting surface and improve smoothness.

Effect of substrate bias voltage on tensile properties of single crystal silicon microstructure fully coated with plasma CVD diamond-like carbon film

NASA Astrophysics Data System (ADS)

Zhang, Wenlei; Hirai, Yoshikazu; Tsuchiya, Toshiyuki; Tabata, Osamu

2018-06-01

Tensile strength and strength distribution in a microstructure of single crystal silicon (SCS) were improved significantly by coating the surface with a diamond-like carbon (DLC) film. To explore the influence of coating parameters and the mechanism of film fracture, SCS microstructure surfaces (120 × 4 × 5 μm3) were fully coated by plasma enhanced chemical vapor deposition (PECVD) of a DLC at five different bias voltages. After the depositions, Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), thermal desorption spectrometry (TDS), surface profilometry, atomic force microscope (AFM) measurement, and nanoindentation methods were used to study the chemical and mechanical properties of the deposited DLC films. Tensile test indicated that the average strength of coated samples was 13.2-29.6% higher than that of the SCS sample, and samples fabricated with a -400 V bias voltage were strongest. The fracture toughness of the DLC film was the dominant factor in the observed tensile strength. Deviations in strength were reduced with increasingly negative bias voltage. The effect of residual stress on the tensile properties is discussed in detail.

Co-doping of CVD diamond with boron and sulfur

NASA Astrophysics Data System (ADS)

Eaton, Sally Catherine

Boron is well-established as a p-type dopant in diamond, but attempts to find a viable n-type dopant remain unsuccessful. In 1999, sulfur was reported to give n-type conductivity. However, later measurements indicated that the samples contained boron and were p-type. Recently, we showed that diamond co-doped with sulfur and small quantities of boron shows n-type conductivity, which was established by Mott-Schottky analyses, thermoelectric effect, Hall measurements, scanning tunneling spectroscopy (STS), and UV open-circuit photo-potential. At higher boron concentrations, a transition to p-type behavior is observed due to overcompensation. Experiments performed without boron in the feed gas or without residual boron in the reactor chamber showed no sulfur incorporation and no change in conductivity. There is evidence that the excess sulfur concentration in the near-surface region is not stable. At room temperature and below, the activation energies range from 0.06 to 0.12 eV. Above 400K there is an irreversible loss in conductivity and the activation energy increases to approximately 1.3 eV. Additionally, we observed by SIMS that there exists a concentration gradient in sulfur with film depth. This sulfur concentration gradient is also observed in our electrical measurements. STS shows a decrease in conductivity with film depth and Hall effect measurements show both p-type and n-type coefficients for samples which are n-type in the near-surface region. The flat-band potential obtained from the Mott-Schottky experiments is only 1 to 1.5 V more negative on the electrochemical scale than that for boron-doped diamond. This implies that the Fermi level is only 1 to 1.5 eV higher than the Fermi level in boron-doped diamond. This observation implies that the n-type conductivity is not by excitation of electrons to the conduction band, but by an alternate mechanism that occurs in the middle of the band gap. One such possibility is an acceptor impurity band. Electrons from individual donor states can be excited into this acceptor band where they are free to move. This mechanism would create n-type conductivity even if the Fermi level was low in the bandgap.

Effects of Different Surface Treatments on Composite Repairs.

PubMed

Batista, Graziela Ribeiro; Kamozaki, Maria Beatriz Beber; Gutierrez, Natália Cortez; Caneppele, Taciana Marco Ferraz; Rocha Gomes Torres, Carlos

2015-08-01

To evaluate the influence of different surface treatments on roughness and bond strength of composite repairs. 120 truncated conical specimens were prepared with composite Grandio SO (VOCO) and submitted to 5000 thermal cycles. Specimens were divided into 12 groups (n = 10) regarding the surface treatments: negative control (NC), without treatment; medium-grit diamond bur (MGD); coarse-grit diamond bur (CGD); conventional carbide bur (ConC); crosscut carbide bur (CutC); chemical vapor deposition diamond bur (CVD); sandblasting with aluminum oxide (AlO); Er:YAG laser 200 mJ/10 Hz (Er200); Er:YAG laser 60 mJ/10 Hz (Er50); Nd:YAG laser 120 mJ/15 Hz (Nd120); Nd:YAG laser 60 mJ/ 15Hz (Nd60); air abrasion with 110-μm silica modified aluminum oxide (Rocatec Plus-3M) (SIL). After the surface treatments, the surface roughness (Ra) was measured using a profilometer, and then the adhesive system Admira Bond (VOCO) was applied. Another truncated conical restoration was built up with the same composite over the bonded area of each specimen. In order to evaluate the cohesive strength, double-cone specimens were made and considered as a control group (CoheC). The specimens were submitted to tensile bond strength testing and the obtained data (MPa) were evaluated by one-way ANOVA, Tukey's and correlation tests. ANOVA showed significant differences among experimental groups for roughness and adhesive strength (p < 0.00). The roughness values (Ra) were: NC (0.21 ± 0.19)(c); ConC (0.30 ± 0.08)(c); CutC (0.50 ± 0.22)(cd); CVD (0.74 ± 0.14)(bd); MGD (0.89 ± 0.39)(ab); Er50 (0.89 ± 0.14)(ab); AlO (0.90 ± 0.07)(ab); Nd60 (0.94 ± 0.33ab; SIL (0.98 ± 0.07)(ab); Nd120 (1.10 ± 0.19)(a); CGD (1.10 ± 0.32)(a); Er200 (1.12 ± 0.21)(a). The results of the tensile bond strength test in MPa were: CGD (11.58 ± 3.03)(a); MGD (12.66 ± 3.82)(ab); NC (13.51 ± 3.95(ab); Nd120 (14.11 ± 5.95)(ab); ConC (14.73 ± 6.12)(ab); Er200 (15.51 ± 1.45)(abc); CVD (15.61 ± 5.00(abc); Er50 (16.44 ± 2.75) (abc); CutC (16.79 ± 2.98)(abc); Nd60 (17.72 ± 2.45)(abcd); AlO (18.33 ± 3.19)(bcd); SIL (21.13 ± 4.48(cd); CoheC (23.50 ± 5.81)(d). The groups followed by the same letters were not statistically significantly different (Tukey's test). No correlation was found between bond strength and roughness (r = 0.007). Air abrasion with silica coating (Rocatec) was the only method which resulted in significantly higher bond strength in relation to the negative control group. The increase in laser energy produced a rougher surface, but reduced the bond strength.

Precision Compton polarimetry for the QWeak experiment at Jefferson Lab

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wouter Deconinck

2011-10-01

The Q Weak experiment, scheduled to run in 2010-2012 in Hall C at Jefferson Lab, will measure the parity-violating asymmetry in elastic electron-proton scattering at 1.1 GeV to determine the weak charge of the proton, Q{sub Weak}{sup p} = 1 - 4 sin{sup 2} {theta}{sub W}. The dominant experimental systematic uncertainty will be the knowledge of the electron beam polarization. With a new Compton polarimeter we aim to measure the beam polarization with a statistical precision of 1% in one hour and a systematic uncertainty of 1%. A low-gain Fabry-Perot cavity laser system provides the circularly polarized photons. The scatteredmore » electrons are detected in radiation-hard diamond strip detectors, and form the basis for a coincidence trigger using distributed logic boards. The photon detector uses a fast, undoped CsI crystal with simultaneous sampling and integrating read-out. Coincident events are used to cross-calibrate the photon and electron detectors.« less

Characterization of microwave plasma CVD of diamond by mass analysis and optical emission spectroscopy

NASA Astrophysics Data System (ADS)

Weimer, Wayne A.; Johnson, Curtis E.

1990-12-01

A microwave plasma enhanced chemical vapor deposition system is characterized using optical emission spectroscopy and mass spectrometry. CH4 CH2 CH4 and CO were used as carbon source gases. The effects of 02 addition to the feed gas is examined. Emission from CH in the plasma is observed and CH4 is a stable reaction product for all carbon source gases used. 02 is fully consumed and converted to H20 and CO. Emission from C is observed for all hydrocarbon gases when 02 is added but is absent when CO is the carbon source gas. Addition of 02 also dramatically affects the relative amount of reaction products as the carbon in the system is converted to CO. 1.

Monte Carlo study of microdosimetric diamond detectors

NASA Astrophysics Data System (ADS)

Solevi, Paola; Magrin, Giulio; Moro, Davide; Mayer, Ramona

2015-09-01

Ion-beam therapy provides a high dose conformity and increased radiobiological effectiveness with respect to conventional radiation-therapy. Strict constraints on the maximum uncertainty on the biological weighted dose and consequently on the biological weighting factor require the determination of the radiation quality, defined as the types and energy spectra of the radiation at a specific point. However the experimental determination of radiation quality, in particular for an internal target, is not simple and the features of ion interactions and treatment delivery require dedicated and optimized detectors. Recently chemical vapor deposition (CVD) diamond detectors have been suggested as ion-beam therapy microdosimeters. Diamond detectors can be manufactured with small cross sections and thin shapes, ideal to cope with the high fluence rate. However the sensitive volume of solid state detectors significantly deviates from conventional microdosimeters, with a diameter that can be up to 1000 times the height. This difference requires a redefinition of the concept of sensitive thickness and a deep study of the secondary to primary radiation, of the wall effects and of the impact of the orientation of the detector with respect to the radiation field. The present work intends to study through Monte Carlo simulations the impact of the detector geometry on the determination of radiation quality quantities, in particular on the relative contribution of primary and secondary radiation. The dependence of microdosimetric quantities such as the unrestricted linear energy L and the lineal energy y are investigated for different detector cross sections, by varying the particle type (carbon ions and protons) and its energy.

Laser erosion diagnostics of plasma facing materials with displacement sensors and their application to safeguard monitors to protect nuclear fusion chambers

NASA Astrophysics Data System (ADS)

Kasuya, Koichi; Motokoshi, Shinji; Taniguchi, Seiji; Nakai, Mitsuo; Tokunaga, Kazutoshi; Mroz, Waldemar; Budner, Boguslaw; Korczyc, Barbara

2015-02-01

Tungsten and SiC are candidates for the structural materials of the nuclear fusion reactor walls, while CVD poly-crystal diamond is candidate for the window material under the hazardous fusion stresses. We measured the surface endurance strength of such materials with commercial displacement sensors and our recent evaluation method. The pulsed high thermal input was put into the material surfaces by UV lasers, and the surface erosions were diagnosed. With the increase of the total number of the laser shots per position, the crater depth increased gradually. The 3D and 2D pictures of the craters were gathered and compared under various experimental conditions. For example, the maximum crater depths were plotted as a function of shot accumulated numbers, from which we evaluated the threshold thermal input for the surface erosions to be induced. The simple comparison-result showed that tungsten was stronger roughly two times than SiC. Then we proposed how to monitor the surface conditions of combined samples with such diamonds coated with thin tungsten layers, when we use such samples as parts of divertor inner walls, fusion chamber first walls, and various diagnostic windows. We investigated how we might be able to measure the inner surface erosions with the same kinds of displacement sensors. We found out the measurable maximum thickness of such diamond which is useful to monitor the erosion. Additionally we showed a new scheme of fusion reactor systems with injectors for anisotropic pellets and heating lasers under the probable use of W and/or SiC.

High temperature superconductivity in distinct phases of amorphous B-doped Q-carbon

NASA Astrophysics Data System (ADS)

Narayan, Jagdish; Bhaumik, Anagh; Sachan, Ritesh

2018-04-01

Distinct phases of B-doped Q-carbon are formed when B-doped and undoped diamond tetrahedra are packed randomly after nanosecond laser melting and quenching of carbon. By changing the ratio of doped to undoped tetrahedra, distinct phases of B-doped Q-carbon with concentration varying from 5.0% to 50.0% can be created. We have synthesized three distinct phases of amorphous B-doped Q-carbon, which exhibit high-temperature superconductivity following the Bardeen-Cooper-Schrieffer mechanism. The first phase (QB1) has a B-concentration ˜17 at. % (Tc = 37 K), the second phase (QB2) has a B-concentration ˜27 at. % (Tc = 55 K), and the third phase (QB3) has a B-concentration ˜45 at. % (Tc expected over 100 K). From geometrical modeling, we derive that QB1 consists of randomly packed tetrahedra, where one out of every three tetrahedra contains a B atom in the center which is sp3 bonded to four carbon atoms with a concentration of 16.6 at. %. QB2 consists of randomly packed tetrahedra, where one out of every two tetrahedra contains a B atom in the center which is sp3 bonded to four carbon atoms with a concentration of 25 at. %. QB3 consists of randomly packed tetrahedra, where every tetrahedron contains a B atom in the center which is sp3 bonded to four carbon atoms with a concentration of 50 at. %. We present detailed high-resolution TEM results on structural characterization, and EELS and Raman spectroscopy results on the bonding characteristics of B and C atoms. From these studies, we conclude that the high electronic density of states near the Fermi energy level coupled with moderate electron-phonon coupling result in high-temperature superconductivity in B-doped Q-carbon.

Zn-dopant dependent defect evolution in GaN nanowires

NASA Astrophysics Data System (ADS)

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-01

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101&cmb.macr;3), (101&cmb.macr;1) and (202&cmb.macr;1), as well as Type I stacking faults (...ABABC&cmb.b.line;BCB...), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (...ABABAC&cmb.b.line;BA...) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires. Electronic supplementary information (ESI) available: HRTEM image of undoped GaN nanowires and first-principles calculations of Zn doped WZ-GaN. See DOI: 10.1039/c5nr04771d

Radio-frequency reflectometry on an undoped AlGaAs/GaAs single electron transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

MacLeod, S. J.; See, A. M.; Keane, Z. K.

2014-01-06

Radio frequency reflectometry is demonstrated in a sub-micron undoped AlGaAs/GaAs device. Undoped single electron transistors (SETs) are attractive candidates to study single electron phenomena, due to their charge stability and robust electronic properties after thermal cycling. However, these devices require a large top-gate, which is unsuitable for the fast and sensitive radio frequency reflectometry technique. Here, we demonstrate that rf reflectometry is possible in an undoped SET.

Mechanical and tribological properties of gradient a-C:H/Ti coatings

NASA Astrophysics Data System (ADS)

Batory, D.; Szymański, W.; Cłapa, M.

2013-08-01

The unusual combination of high hardness and very low friction coefficient are the most attractive tribological parameters of DLC (diamond-like carbon) layers. However, their usability is strongly restricted by the limited thickness due to high residual stress. The main goal of the presented work was to obtain thick, wear resistant and well adherent DLC layers while keeping their perfect friction parameters. As a proposed solution a Ti-Ti x C y gradient layer was manufactured as the adhesion improving interlayer followed by a thick diamond-like carbon film. This kind of combination seems to be very promising for many applications, where dry friction conditions for highly loaded elements can be observed. Both layers were obtained in one process using a hybrid deposition system combining PVD and CVD techniques in one reaction chamber. The investigation was performed on nitrided samples made from X53CrMnNiN21-9 valve steel. Structural features, surface topography, tribological and mechanical properties of manufactured layers were evaluated. The results of the investigation confirmed that the presented deposition technique makes it possible to manufacture thick and well adherent carbon layers with high hardness and very good tribological parameters. Preliminary investigation results prove the possibility of application of presented technology in automotive industry.

The effect of diamond-like carbon coating on LiNi0.8Co0.15Al0.05O2 particles for all solid-state lithium-ion batteries based on Li2S-P2S5 glass-ceramics

NASA Astrophysics Data System (ADS)

Visbal, Heidy; Aihara, Yuichi; Ito, Seitaro; Watanabe, Taku; Park, Youngsin; Doo, Seokgwang

2016-05-01

There have been several reports on improvements of the performance of all solid-state battery using lithium metal oxide coatings on the cathode active material. However, the mechanism of the performance improvement remains unclear. To better understand the effect of the surface coating, we studied the impact of diamond-like carbon (DLC) coating on LiNi0.8Co0.15Al0.05O2 (NCA) by chemical vapor deposition (CVD). The DLC coated NCA showed good cycle ability and rate performance. This result is further supported by reduction of the interfacial resistance of the cathode and electrolyte observed in impedance spectroscopy. The DLC layer was analyzed by transmission electron microscopy electron energy loss spectroscopy (TEM-EELS). After 100 cycles the sample was analyzed by X-ray photo spectroscopy (XPS), and Time-of-Flight Secondary Ion Mass Spectrometry (TOF-SIMS). These analyses showed that the thickness of the coating layer was around 4 nm on average, acting to hinder the side reactions between the cathode particle and the solid electrolyte. The results of this study will provide useful insights for understanding the nature of the buffer layer for the cathode materials.

Growth of ultrananocrystalline diamond film by DC Arcjet plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Chen, G. C.; Li, B.; Yan, Z. Q.; Liu, J.; Lu, F. X.; Ye, H.

2012-06-01

Self-standing diamond films were grown by DC Arcjet plasma enhanced chemical vapor deposition (CVD). The feed gasses were Ar/H2/CH4, in which the flow ratio of CH4 to H2 (F/F) was varied from 5% to 20%. Two distinct morphologies were observed by scanning electron microscope (SEM), i.e. the "pineapple-like" morphology and the "cauliflower-like" morphology. It was found that the morphologies of the as-grown films are strongly dependent on the flow ratio of CH4 to H2 in the feed gasses. High resolution transmission electron microscope (HRTEM) survey results revealed that there were nanocrystalline grains within the "pineapple-like" films whilst there were ultrananocrystalline grains within "cauliflower-like" films. X-ray diffraction (XRD) results suggested that (110) crystalline plane was the dominant surface in the "cauliflower-like" films whilst (100) crystalline plane was the dominant surface in the "pineapple-like" films. Raman spectroscopy revealed that nanostructured carbon features could be observed in both types of films. Plasma diagnosis was carried out in order to understand the morphology dependent growth mechanism. It could be concluded that the film morphology was strongly influenced by the density of gas phases. The gradient of C2 radical was found to be different along the growth direction under the different growth conditions.

Ultrashort pulse laser deposition of thin films

DOEpatents

Perry, Michael D.; Banks, Paul S.; Stuart, Brent C.

2002-01-01

Short pulse PLD is a viable technique of producing high quality films with properties very close to that of crystalline diamond. The plasma generated using femtosecond lasers is composed of single atom ions with no clusters producing films with high Sp.sup.3 /Sp.sup.2 ratios. Using a high average power femtosecond laser system, the present invention dramatically increases deposition rates to up to 25 .mu.m/hr (which exceeds many CVD processes) while growing particulate-free films. In the present invention, deposition rates is a function of laser wavelength, laser fluence, laser spot size, and target/substrate separation. The relevant laser parameters are shown to ensure particulate-free growth, and characterizations of the films grown are made using several diagnostic techniques including electron energy loss spectroscopy (EELS) and Raman spectroscopy.

Bunch by bunch beam monitoring in 3rd and 4th generation light sources by means of single crystal diamond detectors and quantum well devices

NASA Astrophysics Data System (ADS)

Antonelli, M.; Di Fraia, M.; Tallaire, A.; Achard, J.; Carrato, S.; Menk, R. H.; Cautero, G.; Giuressi, D.; Jark, W. H.; Biasiol, G.; Ganbold, T.; Oliver, K.; Callegari, C.; Coreno, M.; De Sio, A.; Pace, E.

2012-10-01

New generation Synchrotron Radiation (SR) sources and Free Electron Lasers (FEL) require novel concepts of beam diagnostics to keep photon beams under surveillance, asking for simultaneous position and intensity monitoring. To deal with high power load and short time pulses provided by these sources, novel materials and methods are needed for the next generation BPMs. Diamond is a promising material for the production of semitransparent in situ X-ray BPMs withstanding the high dose rates of SR rings and high energy FELs. We report on the development of freestanding, single crystal CVD diamond detectors. Performances in both low and radio frequency SR beam monitoring are presented. For the former, sensitivity deviation was found to be approximately 2%; a 0.05% relative precision in the intensity measurements and a 0.1-μm precision in the position encoding have been estimated. For the latter, single-shot characterizations revealed sub-nanosecond rise-times and spatial precisions below 6 μm, which allowed bunch-by-bunch monitoring in multi-bunch operation. Preliminary measurements at the Fermi FEL have been performed with this detector, extracting quantitative intensity and position information for FEL pulses (~ 100 fs, energy 12 ÷ 60 eV), with a long-term spatial precision of about 85 μm results on FEL radiation damages are also reported. Due to their direct, low-energy band gap, InGaAs quantum well devices too may be used as fast detectors for photons ranging from visible to X-ray. Results are reported which show the capability of a novel InGaAs/InAlAs device to detect intensity and position of 100-fs-wide laser pulses.

Thermally stimulated luminescence studies of undoped, Cu- and Mn-doped CaSO4 compounds

NASA Astrophysics Data System (ADS)

Manam, J.; Das, S.

Thermally stimulated luminescence (TSL) of undoped and doped CaSO4 with activators such as Cu and Mn has been investigated. The polycrystalline samples of undoped and doped CaSO4 are prepared by the melting method. The formation of CaSO4 compound is confirmed by X-ray diffraction and Fourier transform infrared studies. Scanning electron microscopic studies of CaSO4 are also carried out. The TSL glow curves of undoped CaSO4, Cu- and Mn-doped CaSO4 are studied. Comparison of the thermoluminescence (TL) intensity of the most intensive glow peak of Cu-doped CaSO4 compound with that of undoped CaSO4 shows that addition of Cu impurity in CaSO4 compound enhances the TL intensity by about four times. However, the addition of Mn impurity to undoped CaSO4 increases the TL intensity by about three times when compared with that of undoped CaSO4. The TL-dose dependence of all three samples was studied and was observed to be almost linear in the studied range of irradiation time. Among the samples studied, namely undoped CaSO4 and Cu- and Mn-doped CaSO4, Cu-doped CaSO4 is found to be the most sensitive. The trap parameters, namely order of kinetics (b), activation energy (E) and frequency factor (s) associated with the most intensive glow peaks of CaSO4:Mn, CaSO4:Cu and CaSO4 phosphors were determined using the glow curve shape (Chen's) method.

Comparison between Silicon-Carbide and diamond for fast neutron detection at room temperature

NASA Astrophysics Data System (ADS)

Obraztsova, O.; Ottaviani, L.; Klix, A.; Döring, T.; Palais, O.; Lyoussi, A.

2018-01-01

Neutron radiation detector for nuclear reactor applications plays an important role in getting information about the actual neutron yield and reactor environment. Such detector must be able to operate at high temperature (up to 600° C) and high neutron flux levels. It is worth nothing that a detector for industrial environment applications must have fast and stable response over considerable long period of use as well as high energy resolution. Silicon Carbide is one of the most attractive materials for neutron detection. Thanks to its outstanding properties, such as high displacement threshold energy (20-35 eV), wide band gap energy (3.27 eV) and high thermal conductivity (4.9 W/cm·K), SiC can operate in harsh environment (high temperature, high pressure and high radiation level) without additional cooling system. Our previous analyses reveal that SiC detectors, under irradiation and at elevated temperature, respond to neutrons showing consistent counting rates as function of external reverse bias voltages and radiation intensity. The counting-rate of the thermal neutron-induced peak increases with the area of the detector, and appears to be linear with respect to the reactor power. Diamond is another semi-conductor considered as one of most promising materials for radiation detection. Diamond possesses several advantages in comparison to other semiconductors such as a wider band gap (5.5 eV), higher threshold displacement energy (40-50 eV) and thermal conductivity (22 W/cm·K), which leads to low leakage current values and make it more radiation resistant that its competitors. A comparison is proposed between these two semiconductors for the ability and efficiency to detect fast neutrons. For this purpose the deuterium-tritium neutron generator of Technical University of Dresden with 14 MeV neutron output of 1010 n·s-1 is used. In the present work, we interpret the first measurements and results with both 4H-SiC and chemical vapor deposition (CVD) diamond detectors irradiated with 14 MeV neutrons at room temperature.

Low-energy nuclear reactions in crystal structures

NASA Astrophysics Data System (ADS)

Bagulya, A. V.; Dalkarov, O. D.; Negodaev, M. A.; Rusetskii, A. S.

2017-09-01

Results of studying low-energy nuclear reactions at the HELIS facility (LPI) are presented. Investigations of yields from DD reactions in deuterated crystal structures at deuteron energies of 10 to 25 keV show a considerable enhancement effect. It is shown that exposure of the deuterated targets to the H+ (proton) and Ne+ beams with energies from 10 to 25 keV and an X-ray beam with the energy of 20 to 30 keV stimulates DD reaction yields. For the CVD diamond target, it is shown that its orientation with respect to the deuteron beam affects the neutron yield. The D+ beam is shown to cause much higher heat release in the TiDx target than the H+ and Ne+ beams, and this heat release depends on the deuterium concentration in the target and the current density of the deuteron beam.

Laser Induced Electrodeposition on Polyimide and GaAs Substrates

DTIC Science & Technology

1983-10-01

6 3.1 Laser Gold Plating on Undoped Ga As Substrate ........... 6 3.1.1 Deposit Formation...22 iv LIST OF ILLUSTRATIONS Figure Page 1. Experimental Set-Up . . . . . .................. 4 2. Laser Gold Pla’ting Undoped GaAs (100...9 3. Laser Gold Plating Undoped GaAs (100) Deposit Resistance Measurement ......................... .10 4. Laser Gold Plating on Polyimide

CVD diamond detector with interdigitated electrode pattern for time-of-flight energy-loss measurements of low-energy ion bunches

NASA Astrophysics Data System (ADS)

Cayzac, W.; Pomorski, M.; Blažević, A.; Canaud, B.; Deslandes, D.; Fariaut, J.; Gontier, D.; Lescoute, E.; Marmouget, J. G.; Occelli, F.; Oudot, G.; Reverdin, C.; Sauvestre, J. E.; Sollier, A.; Soullié, G.; Varignon, C.; Villette, B.

2018-05-01

Ion stopping experiments in plasma for beam energies of few hundred keV per nucleon are of great interest to benchmark the stopping-power models in the context of inertial confinement fusion and high-energy-density physics research. For this purpose, a specific ion detector on chemical-vapor-deposition diamond basis has been developed for precise time-of-flight measurements of the ion energy loss. The electrode structure is interdigitated for maximizing its sensitivity to low-energy ions, and it has a finger width of 100 μm and a spacing of 500 μm. A short single α-particle response is obtained, with signals as narrow as 700 ps at full width at half maximum. The detector has been tested with α-particle bunches at a 500 keV per nucleon energy, showing an excellent time-of-flight resolution down to 20 ps. In this way, beam energy resolutions from 0.4 keV to a few keV have been obtained in an experimental configuration using a 100 μg/cm2 thick carbon foil as an energy-loss target and a 2 m time-of-flight distance. This allows a highly precise beam energy measurement of δE/E ≈ 0.04%-0.2% and a resolution on the energy loss of 0.6%-2.5% for a fine testing of stopping-power models.

Ion Beam Analysis Of Nitrogen Incorporated Ultrananocrystalline Diamond (UNCD) Thin Films

NASA Astrophysics Data System (ADS)

AlFaify, S.; Garratt, E.; Dissanayake, A.; Mancini, D. C.; Kayani, A.

2011-06-01

Determination of the elemental composition is important to correlate the properties of nitrogen incorporated Ultrananocrystalline Diamond (UNCD) thin films with their growth conditions. Films were deposited by CVD deposition technology and nitrogen incorporation was introduced by diluting the growth Ar/CH4 plasma with N2 gas. Deposition of UNCD thin films was carried out on tungsten (˜15 nm) coated Si substrates with varying concentrations of N2 diluted to the growth plasma. Scanning electron microscopy (SEM) and Raman spectroscopy (RS) were used to confirm the characteristic morphology of the UNCD film and its dominant sp3 bonding respectively. The deposited films were smooth on the submicron scale with the RMS roughness value of 2.9-5.1 nm. Reflectometry spectroscopy analysis (RES) technique was used to measure the films thicknesses. To obtain the elemental composition of the UNCD thin films, Rutherford Backscattering Spectrometry (RBS), Non-Rutherford Backscattering Spectrometry (NRBS), Elastic Recoil Detection Analysis (ERDA) and Nuclear Reaction Analysis (NRA) were performed. Deposited UNCD films contained less than 5 at.% of H while N content incorporated in the films was estimated to be lower than 1 at.%. The intermixing region between the substrate and the film was found to be negligible. Moreover, amorphous phase as determined by Raman analysis was found to be increasing for the sample deposited with N2.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Read, Michael; Ives, Robert Lawrence; Marsden, David

The Phase II program developed an internal RF coupler that transforms the whispering gallery RF mode produced in gyrotron cavities to an HE11 waveguide mode propagating in corrugated waveguide. This power is extracted from the vacuum using a broadband, chemical vapor deposited (CVD) diamond, Brewster angle window capable of transmitting more than 1.5 MW CW of RF power over a broad range of frequencies. This coupling system eliminates the Mirror Optical Units now required to externally couple Gaussian output power into corrugated waveguide, significantly reducing system cost and increasing efficiency. The program simulated the performance using a broad range ofmore » advanced computer codes to optimize the design. Both a direct coupler and Brewster angle window were built and tested at low and high power. Test results confirmed the performance of both devices and demonstrated they are capable of achieving the required performance for scientific, defense, industrial, and medical applications.« less

The prototype of the Micro Vertex Detector of the CBM Experiment

NASA Astrophysics Data System (ADS)

Koziel, Michal; Amar-Youcef, Samir; Bialas, Norbert; Deveaux, Michael; Fröhlich, Ingo; Li, Qiyan; Michel, Jan; Milanović, Borislav; Müntz, Christian; Neumann, Bertram; Schrader, Christoph; Stroth, Joachim; Tischler, Tobias; Weirich, Roland; Wiebusch, Michael

2013-12-01

The Compressed Baryonic Matter (CBM) Experiment is one of the core experiments of the future FAIR facility at Darmstadt, Germany. This fixed-target experiment will explore the phase diagram of strongly interacting matter in the regime of highest net baryon densities with numerous probes, among them open charm. Reconstructing those short lived particles requires a vacuum compatible Micro Vertex Detector (MVD) with unprecedented properties. Its sensor technology has to feature a spatial resolution of <5 μm, a non-ionizing radiation tolerance of >1013 neq/cm2, an ionizing radiation tolerance of >3 Mrad and a time resolution of a few 10 μs. The MVD-prototype project aimed to study the integration the CMOS Monolithic Active Pixel Sensors foreseen for the MVD into an ultra light (0.3% X0) and a vacuum compatible detector system based on a cooling support made of CVD-diamond.

Defect chemistry and characterization of Hg(1-x)Cd(x)Te

NASA Technical Reports Server (NTRS)

Vydyanath, H. R.

1981-01-01

Undoped mercury cadmium telluride crystals were subjected to high temperature equilibration at temperatures ranging from 400 C to 655 C in various Hg atmospheres. Hall effect and mobility measurements were carried out on the crystals quenched to room temperature subsequent to the high temperature equilibration. The variation of the hole concentration in the cooled crystals at 77 K as a function of the partial pressure of Hg at the equlibration temperatures, together with a comparison of the hole mobility in the undoped samples with that in the copper and phosphorous doped samples yielded a defect model for the undoped crystals, according to which, the undoped crystals are essentially intrinsic at the equilibration temperatures and the native acceptor defects are doubly ionized. Native donor defects appear to be negligible in concentration, implying that the p to n conversion in these alloys is mainly due to residual foreign donor impurities. The thermodynamic constants for the intrinsic excitation process as well as for the incorporation of the doubly ionized native acceptor defects in the undoped crystals were obtained.

Electronic properties of defects in silicon and related materials

NASA Astrophysics Data System (ADS)

Mitromara, Niki

Efforts in the current semiconductor industry are focused on the production of smaller, more efficient and inexpensive devices of higher packing density. As silicon is the dominant semiconductor implemented for the fabrication of the majority of semiconductor devices, perpetual research has focused on the improvement of its properties and the realisation of the most efficient structures. This thesis presents the electrical characterisation of two different diode structures that are important for the present and future generations of electronic devices.The first part of the thesis is focused on the electrical characterisation of Ultra-Shallow Junction (USJs) Si diodes. Both p+n and n+p USJ structures that contained different implants were examined. These were very highly doped and intended to simulate the situation where a doping well is formed after heavy doping in Si for the fabrication of transistors currently used in Complementary-Metal-Oxide-Semiconductor (CMOS) technology. The implanted USJ diodes were provided by NXP, Belgium and contact deposition was performed before their electrical characterisation as part of this project. Subsequently the p+n and n+p USJ diodes were characterised by the use of Capacitance-Voltage (CV), Current-Voltage (IV), Deep Level Transient Spectroscopy (DLTS) and high resolution Laplace DLTS (LDLTS). DLTS and LDLTS are very powerful spectroscopic techniques for the profiling of defects in the bandgap of a semiconductor as well as for the identification of the electrical signatures of these defects. Transient-Enhanced Diffusion (TED) related defects were detected in these diodes as the presence of mainly carbon-related interstitial complexes was observed. In addition, certain vacancy or vacancy-dopant related levels were also discerned.The second part of this thesis presents the electrical characterisation from Schottky p-diamond/p-Si and p-diamond/n-Si p-n diodes. These diodes were readily provided, grown by the Chemical Vapour Deposition (CVD) technique, for the electrical characterisation that was performed as part of this project. The purpose of characterising both Schottky and p-n diamond on Si diodes was to detect defects near the surface of the films and near the interface with Si and hence provide a comparison between defects present at the beginning and end of growth. More defects were found near the interface with Si and the majority of observed defects were related to extended defects while the presence of grain boundaries in polycrystalline diamond was discussed.

Temporal Stability of Metal-Chloride-Doped Chemical-Vapour-Deposited Graphene.

PubMed

Kang, Moon H; Milne, William I; Cole, Matthew T

2016-08-18

Graphene has proven to be a promising material for transparent flexible electronics. In this study, we report the development of a transfer and doping scheme of large-area chemical vapour deposited (CVD) graphene. A technique to transfer the as-grown material onto mechanically flexible and optically transparent polymeric substrates using an ultraviolet adhesive (UVA) is outlined, along with the temporal stability of the sheet resistance and optical transparency following chemical doping with various metal chlorides (Mx Cly The sheet resistance (RS ) and 550 nm optical transparency (%T550 ) of the transferred un-doped graphene was 3.5 kΩ sq(-1) (±0.2 kΩ sq(-1) ) and 84.1 % (±2.9 %), respectively. Doping with AuCl3 showed a notable reduction in RS by some 71.4 % (to 0.93 kΩ sq(-1) ) with a corresponding %T550 of 77.0 %. After 200 h exposure to air at standard temperature and pressure, the increase in RS was found to be negligible (ΔRS AuCl3 =0.06 kΩ sq(-1) ), indicating that, of the considered Mx Cly species, AuCl3 doping offered the highest degree of time stability under ambient conditions. There appears a tendency of increasing RS with time for the remaining metal chlorides studied. We attribute the observed temporal shift to desorption of molecular dopants. We find that desorption was most significant in RhCl3 -doped samples whereas, in contrast, after 200 h in ambient conditions, AuCl3 -doped graphene showed only marginal desorption. The results of this study demonstrate that chemical doping of UVA-transferred graphene is a promising means for enhancing large-area CVD graphene in order to realise a viable platform for next-generation optically transparent and mechanically flexible electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High resistivity in undoped CdTe: carrier compensation of Te antisites and Cd vacancies

NASA Astrophysics Data System (ADS)

Lindström, A.; Mirbt, S.; Sanyal, B.; Klintenberg, M.

2016-01-01

In this paper, we focus on the high resistivity of intentionally undoped CdTe, where the most prevalent defects are Cd vacancies and Te antisites. Our calculated formation energies lead to the conclusion that the Fermi energy of undoped CdTe is at midgap due to carrier compensation of Te antisites and Cd vacancies, which explains the experimentally observed high resistivity. We use density functional theory with the hybrid functional of Heyd, Scuseria and Ernzerhof (HSE06) and show that the proper description of the native defects in general fails using the local density approximation (LDA) instead of HSE06. We conclude that LDA is insufficient to understand the high resistivity of undoped CdTe. We calculate the neutral and double acceptor state of the Te antisite to be intrinsic DX-centers.

Dye sensitized solar cell based on environmental friendly eosin Y dye and Al doped titanium dioxide nano particles

NASA Astrophysics Data System (ADS)

Kulkarni, Swati S.; Bodkhe, Gajanan A.; Shirsat, Sumedh M.; Hussaini, S. S.; Shejwal, N. N.; Shirsat, Mahendra D.

2018-03-01

Present communication deals with the development of cost effective dye sensitized solar cell (DSSC) with eco-friendly materials. Eco-friendly Eosin Y dye was used to sensitize photo anode which was fabricated using undoped and Aluminium doped titanium dioxide (TiO2) nanoparticles. Undoped and Aluminium doped TiO2 nanoparticles were synthesized by simple and cost effective sol-gel method. Aluminium doped and undoped TiO2 nanoparticles were characterized using UV-visible, FT-IR spectroscopy, x-ray Diffraction, and Scanning Electron Micrograph with EDX. The photo-voltaic activity of the cell was studied under light irradiation of 100 milliwatt cm-2. Aluminium doped TiO2 nanoparticle photo electrode exhibits more than 60% increase in cell efficiency as compared to the undoped TiO2 nanoparticle photo electrode.

Effect of Doping on the Properties of Hydrogenated Amorphous Silicon Irradiated with Femtosecond Laser Pulses

NASA Astrophysics Data System (ADS)

Denisova, K. N.; Il'in, A. S.; Martyshov, M. N.; Vorontsov, A. S.

2018-04-01

A comparative analysis of the effect of femtosecond laser irradiation on the structure and conductivity of undoped and boron-doped hydrogenated amorphous silicon ( a-Si: H) is performed. It is demonstrated that the process of nanocrystal formation in the amorphous matrix under femtosecond laser irradiation is initiated at lower laser energy densities in undoped a-Si: H samples. The differences in conductivity between undoped and doped a-Si: H samples vanish almost completely after irradiation with an energy density of 150-160 mJ/cm2.

Undoped GaAs bilayers for exciton condensation experiments

NASA Astrophysics Data System (ADS)

Lilly, M. P.

2005-03-01

Experimental progress in transport studies of exciton condensation of in electron and hole bilayers at high magnetic fields [1,2] has shown this novel physics can be observed. Fabrication of the bipolar electron-hole bilayers for zero field studies of exciton condensation still remains elusive. We describe a series of experiments on undoped GaAs/AlGaAs heterostructures with the motivation of making electron-hole bilayers. In these undoped devices, external electric fields induce carriers rather than the traditional doping techniques. Single layer electron (or hole) devices demonstrate a high mobility over a wide range of density. More recently, fully undoped bilayers have been made where the density in each layer is independently controlled with gates on the top and bottom of the bilayer. In this talk we present high field transport of undoped electron-electron bilayers, and describe recent progress towards extending the fabrication techniques to creating electron-hole bilayers for exciton condensation studies at zero magnetic field. Sandia is a multiprogram laboratory operated by Sandia Corporation, a Lockheed Martin Company, for the United States Department of Energy under contract DE-AC04-94AL85000. 1. M. Kellogg, J. P. Eisenstein, L. N. Pfeiffer, and K. W. West, Phys. Rev. Lett. 93 036801 (2004). 2. E. Tutoc, M. Shayegan, and D. A. Huse, Phys. Rev. Lett. 93, 036802 (2004).

Deposition of defected graphene on (001) Si substrates by thermal decomposition of acetone

NASA Astrophysics Data System (ADS)

Milenov, T. I.; Avramova, I.; Valcheva, E.; Avdeev, G. V.; Rusev, S.; Kolev, S.; Balchev, I.; Petrov, I.; Pishinkov, D.; Popov, V. N.

2017-11-01

We present results on the deposition and characterization of defected graphene by the chemical vapor deposition (CVD) method. The source of carbon/carbon-containing radicals is thermally decomposed acetone (C2H6CO) in Ar main gas flow. The deposition takes place on (001) Si substrates at about 1150-1160 °C. We established by Raman spectroscopy the presence of single- to few- layered defected graphene deposited on two types of interlayers that possess different surface morphology and consisted of mixed sp2 and sp3 hybridized carbon. The study of interlayers by XPS, XRD, GIXRD and SEM identifies different phase composition: i) a diamond-like carbon dominated film consisting some residual SiC, SiO2 etc.; ii) a sp2- dominated film consisting small quantities of C60/C70 fullerenes and residual Si-O-, Cdbnd O etc. species. The polarized Raman studies confirm the presence of many single-layered defected graphene areas that are larger than few microns in size on the predominantly amorphous carbon interlayers.

Photon beam position monitor

DOEpatents

Kuzay, Tuncer M.; Shu, Deming

1995-01-01

A photon beam position monitor for use in the front end of a beamline of a high heat flux and high energy photon source such as a synchrotron radiation storage ring detects and measures the position and, when a pair of such monitors are used in tandem, the slope of a photon beam emanating from an insertion device such as a wiggler or an undulator inserted in the straight sections of the ring. The photon beam position monitor includes a plurality of spaced blades for precisely locating the photon beam, with each blade comprised of chemical vapor deposition (CVD) diamond with an outer metal coating of a photon sensitive metal such as tungsten, molybdenum, etc., which combination emits electrons when a high energy photon beam is incident upon the blade. Two such monitors are contemplated for use in the front end of the beamline, with the two monitors having vertically and horizontally offset detector blades to avoid blade "shadowing". Provision is made for aligning the detector blades with the photon beam and limiting detector blade temperature during operation.

Zinc Oxide-Based Schottky Diode Prepared Using Radio-Frequency Magnetron Cosputtering System

NASA Astrophysics Data System (ADS)

Lai, Bo-Ting; Lee, Ching-Ting; Hong, Jhen-Dong; Yao, Shiau-Lu; Liu, Day-Shan

2010-08-01

The rectifying property of a zinc oxide (ZnO)-based Schottky diode prepared using a radio-frequency (rf) magnetron cosputtering system was improved by enhancing the cosputtered ZnO crystal quality, thereby optimizing the ohmic contact resistance and compensating the Schottky contact surface states. An undoped ZnO layer with a high c-axis orientation and a low internal residual stress was achieved using a postannealing treatment. A homogeneous n-type ZnO-indium tin oxide (ITO) cosputtered film was deposited onto the undoped ZnO layer to optimize the ohmic contact behavior to the Al electrode. The Schottky contact surface of the undoped ZnO layer to the Ni/Au electrode was passivated using an oxygen plasma treatment. Owing to the compensation of the native oxygen vacancies (VO) on the undoped ZnO surface, the leakage current markedly decreased and subsequently led to a quality Schottky diode performance with an ideality factor of 1.23 and a Schottky barrier height of 0.82 eV.

Effect of Ag doping and annealing on thermoelectric properties of PbTe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bala, Manju, E-mail: Manjubala474@gmail.com; Tripathi, T. S.; Avasthi, D. K.

2015-06-24

The present study reveals that annealing Ag doped PbTe thin films enhance thermoelectric properties. Phase formation was identified by using X-ray diffraction measurement. Annealing increases the crystallinity of both undoped and Ag doped PbTe. Electrical resistivity and thermoelectric power measurements are done using four probe and bridge method respectively. The increase in thermoelectric power of Ag doped PbTe is 29 % in comparison to undoped PbTe and it further increases to 34 % after annealing at 250{sup o} C for 1 hour whereas thermoelectric power increases by 14 % on annealing undoped PbTe thin films at same temperature.

Comparison of high-density carbon implosions in unlined uranium versus gold hohlraums

NASA Astrophysics Data System (ADS)

Dewald, Eduard; Meezan, Nathan; Tommasini, Riccardo; Khan, Shahab; MacKinnon, Andrew; Berzak Hopkins, Laura; Divol, Laurent; Lepape, Sebastien; Moore, Alastair; Schneider, Marilyn; Pak, Arthur; Nikroo, Abbas; Landen, Otto

2016-10-01

In Inertial Confinement Fusion (ICF) implosions, laser energy is converted to x-ray radiation in hohlraums with High-Z walls. At radiation temperatures near 300 eV relevant for ICF experiments, the radiative losses in heating the wall are lower for U than for Au hohlraums. Furthermore, the intensity of the ``M-band'' x-rays with photon energies h ν >1.8 keV is lower for uranium, allowing for reduced capsule dopant concentrations employed to minimize inner ablator preheat and hence keep favorable fuel/ablator interface Atwood numbers. This in turn improves the ablator rocket efficiency and reduces the risk of polluting the hot-spot with emissive dopant material. The first uranium vacuum hohlraum experiments on the National Ignition Facility (NIF) with undoped high-density carbon (HDC, or diamond) capsules have demonstrated 30% lower ``M-band'' intensity relative to Au, resulting in lower inflight ablator thickness due to reduced preheat. In addition, fusion neutron yields are 2x higher in U than in Au hohlraums for D2-gas filled capsule implosions at ICF relevant velocities of 380 +/-20 km/s. These results have led the NIF ICF implosions to routinely employ U hohlraums. Prepared by LLNL under Contract DE-AC52-07NA27344.

Thermal Characterization of Nanostructures and Advanced Engineered Materials

NASA Astrophysics Data System (ADS)

Goyal, Vivek Kumar

Continuous downscaling of Si complementary metal-oxide semiconductor (CMOS) technology and progress in high-power electronics demand more efficient heat removal techniques to handle the increasing power density and rising temperature of hot spots. For this reason, it is important to investigate thermal properties of materials at nanometer scale and identify materials with the extremely large or extremely low thermal conductivity for applications as heat spreaders or heat insulators in the next generation of integrated circuits. The thin films used in microelectronic and photonic devices need to have high thermal conductivity in order to transfer the dissipated power to heat sinks more effectively. On the other hand, thermoelectric devices call for materials or structures with low thermal conductivity because the performance of thermoelectric devices is determined by the figure of merit Z=S2sigma/K, where S is the Seebeck coefficient, K and sigma are the thermal and electrical conductivity, respectively. Nanostructured superlattices can have drastically reduced thermal conductivity as compared to their bulk counterparts making them promising candidates for high-efficiency thermoelectric materials. Other applications calling for thin films with low thermal conductivity value are high-temperature coatings for engines. Thus, materials with both high thermal conductivity and low thermal conductivity are technologically important. The increasing temperature of the hot spots in state-of-the-art chips stimulates the search for innovative methods for heat removal. One promising approach is to incorporate materials, which have high thermal conductivity into the chip design. Two suitable candidates for such applications are diamond and graphene. Another approach is to integrate the high-efficiency thermoelectric elements for on-spot cooling. In addition, there is strong motivation for improved thermal interface materials (TIMs) for heat transfer from the heat-generating chip to heat-sinking units. This dissertation presents results of the experimental investigation and theoretical interpretation of thermal transport in the advanced engineered materials, which include thin films for thermal management of nanoscale devices, nanostructured superlattices as promising candidates for high-efficiency thermoelectric materials, and improved TIMs with graphene and metal particles as fillers providing enhanced thermal conductivity. The advanced engineered materials studied include chemical vapor deposition (CVD) grown ultrananocrystalline diamond (UNCD) and microcrystalline diamond (MCD) films on Si substrates, directly integrated nanocrystalline diamond (NCD) films on GaN, free-standing polycrystalline graphene (PCG) films, graphene oxide (GOx) films, and "pseudo-superlattices" of the mechanically exfoliated Bi2Te3 topological insulator films, and thermal interface materials (TIMs) with graphene fillers.

Diamond Scattering Detectors for Compton Telescopes

NASA Astrophysics Data System (ADS)

Bloser, Peter

The objective of the proposed work is to demonstrate the suitability of artificial singlecrystal diamond detectors (SCDDs) for use as the scattering medium in Compton telescopes for medium-energy gamma-ray astronomy. SCDDs offer the possibility of position and energy resolution comparable to those of silicon solid-state detectors (SSDs), combined with efficiency and timing resolution so-far only achievable using fast scintillators. When integrated with a calorimeter composed of fast inorganic scintillator, such as CeBr3, read out by silicon photomultipliers (SiPMs), SCDDs will enable a compact and efficient Compton telescope using time-of-flight (ToF) discrimination to achieve low background and high sensitivity. This detector development project will be a collaboration between the University of New Hampshire (UNH) and Southwest Research Institute (SwRI). The proposed work represents an innovative combination of detector technologies originally conceived separately for high-energy astronomy (fast scintillators read out by SiPMs; UNH) and space plasma/particle physics (SCDDs; SwRI). Recently SwRI has demonstrated that SCDDs fabricated using chemical vapor deposition (CVD) show good energy resolution ( 7 keV FWHM), comparable to silicon SSDs, with much faster time response ( ns rise time) due to higher electron/hole mobilities. They are also temperature- and lightinsensitive, and radiation hard. In addition, diamond is low-Z, composed entirely of carbon, but relatively high-density (3.5 g cm-3) compared to silicon or organic scintillator. SCDDs are therefore an intriguing possibility for a new Compton scattering element: if patterned with mm-sized readout electrodes and combined with a fast inorganic scintillator calorimeter, SCDDs could enable a compact but efficient Compton telescope with superior angular and energy resolution, while maintaining ToF background rejection. Such an instrument offers the exciting potential for unprecedented sensitivity, especially at energies < 1 - 2 MeV, on a small-scale mission utilizing recently available SmallSat buses (payload mass <100 kg). We propose to demonstrate this by constructing and testing a small proof-of-concept prototype and, based on its performance, using Monte Carlo simulations to explore the possibilities of furthering MeV science using relatively small-scale space missions.

Multiscale Modelling of Electronic and Thermal Transport : Thermoelectrics, Turbostratic 2D Materials and Diamond/c-BN HEMT

NASA Astrophysics Data System (ADS)

Narendra, Namita

Multiscale modelling has become necessary with the advent of low dimensional devices as well as use of heterostructures which necessitates atomistic treatment of the interfaces. Multiscale methodology is able to capture the quantum mechanical atomistic details while enabling the simulation of micro-scale structures at the same time. In this thesis, multiscale modelling has been applied to study transport in thermoelectrics, turbostratic 2D MoS2/WS 2 heterostructure and diamond/c-BN high mobility electron transistor (HEMT). The possibility of enhanced thermoelectric properties through nanostructuring is investigated theoretically in a p-type Bi2Te3/Sb 2Te3 heterostructure. A multi-scale modeling approach is adopted to account for the atomistic characteristics of the interface as well as the carrier/phonon transport properties in the larger scales. The calculations clearly illustrate the desired impact of carrier energy filtering at the potential barrier by locally boosting the power factor over a sizable distance in the well region. Further, the phonon transport analysis illustrates a considerable reduction in the thermal conductivity at the heterointerface. Both effects are expected to provide an effective means to engineer higher zT in this material system. Next, power factor enhancement through resonant doping is explored in Bi2Te3 based on a detailed first-principles study. Of the dopant atoms investigated, it is found that the formation of resonant states may be achieved with In, Po and Na, leading potentially to significant increase in the thermoelectric efficiency at room temperature. While doping with Po forms twin resonant state peaks in the valence and conduction bands, the incorporation of Na or In results in the resonant states close to the valence band edge. Further analysis reveals the origin of these resonant states. Transport calculations are also carried out to estimate the anticipated level of enhancement. Next, in-plane and cross-plane transport in turbostratic MoS2/WS 2 heterostructure is investigated. Since it is a major challenge in controlling the stacking orientation while growing these heterostructures, the electronic transport properties can experience a sizeable impact via misorientation. Small rotation angles lead to large unit cells with thousands of atoms necessiating an analytical tight binding approach. Tight binding model is developed for MoS2/WS2 heterostructure by fitting to DFT data which is extended to the turbostratic case. Cross-plane electronic transport is then analyzed by NEGF and Landauer formalism. It is found that in-plane transport remains largely unaffected, while inter-layer electrical resistance increases upto 10% for holes and 30% for electrons. Finally, diamond/c-BN HEMT is proposed. Diamond is a promising material for high-power electronic applications in both the dc and rf domains. However, the predicted advantages are yet to be realized due to a number of technical challenges. In particular, n-type devices have not been feasible due to the large ionization energies and low thermodynamic solubility limits of n-dopants. Motivated by the recent advances in nonequilibrium processing, we propose and theoretically examine a diamond/c-BN HEMT that can circumvent the critical limitations. A first-principles calculation suggests the desired type-I alignment at the heterojunction of these two nearly lattice matched semiconductors. The investigation also illustrates that a large sheet carrier density in excess of 5 x 1012 cm-2 can be induced in the undoped diamond channel by the gate bias. A subsequent analysis of a simple prototype design indicates that the proposed device can achieve large current drive (˜ 10 A/cm), low Ron (˜ 0.05 mO · cm2), and high f T (˜ 300 GHz) simultaneously.

Surface Morphology of Undoped and Doped ZnSe Films

NASA Technical Reports Server (NTRS)

George, T.; Hayes, M.; Chen, H.; Chattopadhyay, K.; Thomas E.; Morgan, S.; Burger, A.

1998-01-01

Rare-earth doped ions in polar II-VI semiconductors have recently played an important role in the optical properties of materials and devices. In this study, undoped ZnSe and erbium doped ZnSe films were grown by radio frequency (RF) magnetron sputtering method. Atomic Force Microscopy (AFM) was used together with optical microscopy and UV-Vis spectroscopy to characterize the films. Doped samples were found to have higher surface roughness and quite different surface morphology compared to that of undoped samples. The grown films generally show a relatively smooth and uniform surface indicating that they are of overall good quality. The impact of plasma etching on ZnSe:Er film examined under AFM is also discussed.

Magnetic properties of undoped and Al doped layered α-Co(OH)2

NASA Astrophysics Data System (ADS)

Gupta, Anu; Tiwari, S. D.

2017-11-01

Undoped, 10% and 20% Al doped samples of layered hexagonal α-Co(OH)2 are synthesized. X-ray diffraction patterns show that the samples are nanocrystalline with average crystallite size 15 nm. Fourier transform infrared spectroscopy and thermogravimetric analysis are performed to establish molecular formula of samples. Analysis of susceptibility χ as a function of temperature T (5-300 K) data indicates for ferromagnetic transitions in the system at lower temperatures. Curie transition temperature TC for undoped, 10% and 20% Al doped α-Co(OH)2 are found to be 9, 7.5 and 6.0 K respectively. Fitting of χ vs. T data for T >TC to the high temperature series yields strength of intralayer and interlayer exchange interactions among Co2+ ions. For undoped sample values of these interactions are estimated to be 1.070 and 0.240 K respectively. Strength of these interactions decrease with increasing concentration of Al3+ ions in the lattice. Magnetization as a function of applied magnetic field (up to ± 50 kG) data confirm ferromagnetic nature of the samples at 5 K.

Theoretical studies on anisotropic electrical conductivity of trans-polyacetylene doped with n-type dopants

NASA Astrophysics Data System (ADS)

Wang, Cunguo; Wang, Rongshun

2000-12-01

Based on energy band theory of solid states, extended Hückel molecular orbital methods (EHMO/CO) were used to calculate the two-dimensional (2D) energy band structures of highly oriented trans-polyacetylene (PA) undoped and doped with n-type dopant (Li, Na, K). The band gaps ( Eg) of undoped PA in directions parallel and perpendicular to the oriented direction were 1.195 and 3.040 eV, respectively. When PA was doped with n-type dopant, the corresponding band gaps Eg1 and Eg2 decreased significantly. Based on the calculated results, we could successfully account for the changes of electrical anisotropy of PA from the undoped state to the doped form. The conductivity anisotropy ratio σ1/ σ2 decreased when PA was doped with n-type dopant, because the PA chains and the dopant showed a strong interchain coupling. It was the interchain coupling that acted as a bridge between two neighboring chains, and made the charge-carrier transport easier between the interchains. The theoretical results for undoped and doped PA are in good agreement with the experiment.

Thermoelectric properties of Sn doped BiCuSeO

NASA Astrophysics Data System (ADS)

Das, Sayan; Chetty, Raju; Wojciechowski, Krzysztof; Suwas, Satyam; Mallik, Ramesh Chandra

2017-10-01

BiCuSeO and Bi1-xSnxCuSeO (x = 0.02, 0.04, 0.06, 0.08) were prepared by a two-step solid state synthesis. The phase purity and the crystal structure were investigated by the X-Ray Diffraction (XRD) and confirmed by Energy Dispersive Spectroscopy (EDS). The volatilization of Bi and Bi2O3 lead to off-stoichiometry of the main phase and the formation of CuSe2 secondary phase in the undoped sample. SnO2 secondary phases were found in the doped samples. Both the Seebeck coefficient and the electrical resistivity, measured from the room temperature to 773 K linearly increases with the temperature, which indicates that the sample have metallic like behavior. The origin of such a behavior is due to high hole concentration originating from the Bi and the O vacancies. The Sn +4 valence state was confirmed from the X-Ray Photoelectron Spectroscopy (XPS) and from the reduction of lattice parameter 'a' with doping. The substitution of Sn+4 in the place of Bi+3 leads to the higher Seebeck coefficient and electrical resistivity in the doped samples. Highest power-factor (∼1 mW/m-K2 at 773 K), was obtained for the undoped sample and the 4% Sn doped sample (Bi0.96Sn0.04CuSeO). The lowest thermal conductivity was obtained for the undoped sample, from the room temperature to 773 K. The presence of thermally-conducting SnO2 secondary phases in the doped samples increases the thermal conductivity in comparison with the undoped sample. The zTs of the doped samples were lower compared to the undoped sample, owing to their higher thermal conductivity. The oxygen vacancies as well as the all-length scale phonon scattering, lowers the thermal conductivity of the undoped sample and, as a result, a maximum zT of 1.09 was achieved at 773 K.

Topography and presence of a smear layer in deciduous molars prepared with high-speed cutting and ultrasonic abrasion: an in-vitro study.

PubMed

Vieira, Áurea Simone Barroso; Pedro, Rafael de Lima; Antunes, Leonardo Dos Santos; Alves Dos Santos, Márcia Pereira; Antunes, Livia Azeredo Alves; Primo, Laura Guimarães; Maia, Lucianne Cople

2011-05-01

The aim of this in-vitro study was to compare the effect of high-speed cutting (HS) with ultrasonic abrasion (US) concerning the internal topography and the presence of a smear layer in a cavity preparation performed in healthy deciduous molars. Seven first deciduous molars were used. Two occlusal cavity preparation were done, one in the medial fossula and another in the distal fossula, which were chosen randomly. One preparation was carried out with a diamond point adapted to the HS system (GI), while a chemical vapor deposition (CVD) point adapted to a US device (GII) was used for the other preparation. Subsequently, all samples (n = 14) were cleaved to observe the inside and then prepared for evaluation using scanning electron photomicroscopy. The internal topography of the prepared cavities was descriptively analyzed. In order to assess the presence of a smear layer, scores were tabulated using the 2000 GMC program and analyzed using the Mann-Whitney test. Concerning the internal topography, the presence of striae was verified in both groups. In the GI group they were finer, found in a greater number, and with narrower spaces between them. In the GII group, the striae were undulating, similar to the effect of wheels on sand, and with wider spaces between them. As regards the presence of a smear layer, there was no statistically significant difference between the groups (P > 0.05). In view of the methodology employed, it may be concluded that cavity preparation with a CVD point in a US abrasion system led to the formation of fewer striae and both devices promoted the marked presence of a smear layer, obstructing dentinal tubuli.

Applications of Mapping and Tomographic Techniques in Gem Sciences

NASA Astrophysics Data System (ADS)

Shen, A. H.

2014-12-01

Gem Sciences are scientific studies of gemstones - their genesis, provenance, synthesis, enhancement, treatment and identification. As high quality forms of specific minerals, the gemstones exhibit unusual physical properties that are usually unseen in the regular counterparts. Most gemstones are colored by trace elements incorporated in the crystal lattice during various growth stages; forming coloration zones of various scales. Studying the spectral and chemical contrast across color zones helps elucidating the origins of colors. These are done by UV-visible spectrometers with microscope and LA-ICPMS in modern gemological laboratories. In the case of diamonds, their colored zones arise from various structural defects incorporated in different growth zones and are studied with FTIR spectrometers with IR microscope and laser photoluminescence spectrometers. Advancement in modern synthetic techniques such as chemical vapor deposition (CVD) has created some problem for identification. Some exploratory experiments in carbon isotope mapping were done on diamonds using SIMS. The most important issue in pearls is to identify one particular pearl being a cultured one or a natural pearl. The price difference can be enormous. Classical way of such identification is done by x-ray radiographs, which clearly show the bead and the nacre. Modern cultured pearl advancement has eliminated the need for an artificial bead, but a small piece of tissue instead. Nowadays, computer x-ray tomography (CT) scanning devices are used to depict the clear image of the interior of a pearl. In the Chinese jade market, filling fissures with epoxy and/or wax are very commonly seen. We are currently exploring Magnetic Resonance Imaging (MRI) technique to map the distribution of artificial resin within a polycrystalline aggregates.

Effect of diamond-like carbon coating on corrosion rate of machinery steel HQ 805

NASA Astrophysics Data System (ADS)

Slat, Winda Sanni; Malau, Viktor; Iswanto, Priyo Tri; Sujitno, Tjipto; Suprapto

2018-04-01

HQ 805 is known as a super strength alloys steel and widely applied in military equipment and, aircraft components, drilling device and so on. It is due to its excellent behavior in wear, fatigue, high temperature and high speed operating conditions. The weakness of this material is the vulnerablality to corrosion when employed in sour environments where hydrogen sulfide and chlorides are present. To overcome the problems, an effort should be made to improve or enhance the surface properties for a longer service life. There are varieties of coatings developed and used to improve surface material properties. There are several kinds of coating methods; chemical vapour deposition (CVD), physical vapour deposition (PVD), thermochemical treatment, oxidation, or plasma spraying. This paper presents the research result of the influence of Diamond-Like Carbon (DLC) coating deposited using DC plasma enhanced chemical vapor deposition (DC-PECVD) on corrosion rate (by potentiodynamic polarization method) of HQ 805 machinery steel. As a carbon sources, a mixture of argon (Ar) and methane (CH4) with ratio 76% : 24% was used in this experiment. The conditions of experiment were 400 °C of temperature, 1.2 mbar, 1.4 mbar, 1.6 mbar and 1.8 mbar of pressure of process. Investigated surface properties were hardness (microhardness tester), roughness (roughness test), chemical composition (Spectrometer), microstructure (SEM) and corrosion rate (potentiodynamic polarization). It has been found that the optimum condition with the lowest corrosion rate is at a pressure of 1.4 mbar with a deposition duration of 4 hours at a constant temperature of 400 °C. In this condition, the corrosion rate decreases from 12.326 mpy to 4.487 mpy.

Plastic Schottky barrier solar cells

DOEpatents

Waldrop, James R.; Cohen, Marshall J.

1984-01-24

A photovoltaic cell structure is fabricated from an active medium including an undoped, intrinsically p-type organic semiconductor comprising polyacetylene. When a film of such material is in rectifying contact with a magnesium electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates the magnesium layer on the undoped polyacetylene film.

Multilayer optical dielectric coating

DOEpatents

Emmett, John L.

1990-01-01

A highly damage resistant, multilayer, optical reflective coating includes alternating layers of doped and undoped dielectric material. The doping levels are low enough that there are no distinct interfaces between the doped and undoped layers so that the coating has properties nearly identical to the undoped material. The coating is fabricated at high temperature with plasma-assisted chemical vapor deposition techniques to eliminate defects, reduce energy-absorption sites, and maintain proper chemical stoichiometry. A number of differently-doped layer pairs, each layer having a thickness equal to one-quarter of a predetermined wavelength in the material are combined to form a narrowband reflective coating for a predetermined wavelength. Broadband reflectors are made by using a number of narrowband reflectors, each covering a portion of the broadband.

Effect of Si, Mg, and Mg Zn doping on structural properties of a GaN layer grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cho, H. K.; Lee, J. Y.; Kim, K. S.; Yang, G. M.

2001-12-01

We have studied the structural properties of undoped, Si-doped, Mg-doped, and Mg-Zn codoped GaN using high-resolution X-ray diffraction (HRXRD) and transmission electron microscopy. When compared with undoped GaN, the dislocation density at the surface of the GaN layer decreases with Si doping and increases with Mg doping. In addition, we observed a reduction of dislocation density by codoping with Zn atoms in the Mg-doped GaN layer. The full width at half maximum of HRXRD shows that Si doping and Mg-Zn codoping improve the structural quality of the GaN layer as compared with undoped and Mg-doped GaN, respectively.

Substrate effect on the room-temperature ferromagnetism in un-doped ZnO films

NASA Astrophysics Data System (ADS)

Zhan, Peng; Wang, Weipeng; Xie, Zheng; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-07-01

Room-temperature ferromagnetism was achieved in un-doped ZnO films on silicon and quartz substrates. Photoluminescence measurement and positron annihilation analysis suggested that the ferromagnetism was originated from singly occupied oxygen vacancies (roughly estimated as ˜0.55 μB/vacancy), created in ZnO films by annealing in argon. The saturated magnetization of ZnO films was enhanced from ˜0.44 emu/g (on quartz) to ˜1.18 emu/g (on silicon) after annealing at 600 °C, as silicon acted as oxygen getter and created more oxygen vacancies in ZnO films. This study clarified the origin of ferromagnetism in un-doped ZnO and provides an idea to enhance the ferromagnetism.

Electrical properties of surface and interface layers of the N- and In-polar undoped and Mg-doped InN layers grown by PA MBE

NASA Astrophysics Data System (ADS)

Komissarova, T. A.; Kampert, E.; Law, J.; Jmerik, V. N.; Paturi, P.; Wang, X.; Yoshikawa, A.; Ivanov, S. V.

2018-01-01

Electrical properties of N-polar undoped and Mg-doped InN layers and In-polar undoped InN layers grown by plasma-assisted molecular beam epitaxy (PA MBE) were studied. Transport parameters of the surface and interface layers were determined from the measurements of the Hall coefficient and resistivity as well as the Shubnikov-de Haas oscillations at magnetic fields up to 60 T. Contributions of the 2D surface, 3D near-interface, and 2D interface layers to the total conductivity of the InN films were defined and discussed to be dependent on InN surface polarity, Mg doping, and PA MBE growth conditions.

En route to controlled catalytic CVD synthesis of densely packed and vertically aligned nitrogen-doped carbon nanotube arrays.

PubMed

Boncel, Slawomir; Pattinson, Sebastian W; Geiser, Valérie; Shaffer, Milo S P; Koziol, Krzysztof K K

2014-01-01

The catalytic chemical vapour deposition (c-CVD) technique was applied in the synthesis of vertically aligned arrays of nitrogen-doped carbon nanotubes (N-CNTs). A mixture of toluene (main carbon source), pyrazine (1,4-diazine, nitrogen source) and ferrocene (catalyst precursor) was used as the injection feedstock. To optimize conditions for growing the most dense and aligned N-CNT arrays, we investigated the influence of key parameters, i.e., growth temperature (660, 760 and 860 °C), composition of the feedstock and time of growth, on morphology and properties of N-CNTs. The presence of nitrogen species in the hot zone of the quartz reactor decreased the growth rate of N-CNTs down to about one twentieth compared to the growth rate of multi-wall CNTs (MWCNTs). As revealed by electron microscopy studies (SEM, TEM), the individual N-CNTs (half as thick as MWCNTs) grown under the optimal conditions were characterized by a superior straightness of the outer walls, which translated into a high alignment of dense nanotube arrays, i.e., 5 × 10(8) nanotubes per mm(2) (100 times more than for MWCNTs grown in the absence of nitrogen precursor). In turn, the internal crystallographic order of the N-CNTs was found to be of a 'bamboo'-like or 'membrane'-like (multi-compartmental structure) morphology. The nitrogen content in the nanotube products, which ranged from 0.0 to 3.0 wt %, was controlled through the concentration of pyrazine in the feedstock. Moreover, as revealed by Raman/FT-IR spectroscopy, the incorporation of nitrogen atoms into the nanotube walls was found to be proportional to the number of deviations from the sp(2)-hybridisation of graphene C-atoms. As studied by XRD, the temperature and the [pyrazine]/[ferrocene] ratio in the feedstock affected the composition of the catalyst particles, and hence changed the growth mechanism of individual N-CNTs into a 'mixed base-and-tip' (primarily of the base-type) type as compared to the purely 'base'-type for undoped MWCNTs.

Evaluation of community health screening participants' knowledge of cardiovascular risk factors.

PubMed

Mooney, Leslie A; Franks, Amy M

2009-01-01

To assess knowledge of cardiovascular disease (CVD) risk factors among a group of health screening participants and to compare knowledge between participants with high and low CVD risk. Cross-sectional pilot study. Jonesboro, AR, during June 2007. 121 adult volunteers participating in a community health screening. 34-item self-administered written questionnaire. Ability to identify CVD risk factors and healthy values for CVD risk factors and the differences in these abilities between participants with high and low CVD risk. Participants demonstrated good knowledge of traditional CVD risk factors such as high blood pressure, high cholesterol, lack of exercise, and overweight or obese status. Knowledge of other CVD risk factors and healthy values for major CVD risk factors was limited. Participants with high CVD risk were significantly more likely to correctly identify high triglycerides as a CVD risk factor and to identify healthy values for fasting blood glucose and total cholesterol compared with participants with low CVD risk. Overall, participants lacked knowledge of the risk factor status and healthy values for many CVD risk factors. Participants with high CVD risk may have better knowledge of some CVD risk factors than participants with low CVD risk. These findings highlight the need for more education to improve knowledge in both risk groups.

Industrial diamond

USGS Publications Warehouse

Olson, D.W.

2001-01-01

An overview of the industrial diamond industry is provided. More than 90 percent of the industrial diamond consumed in the U.S. and the rest of the world is manufactured diamond. Ireland, Japan, Russia, and the U.S. produce 75 percent of the global industrial diamond output. In 2000, the U.S. was the largest market for industrial diamond. Industrial diamond applications, prices for industrial diamonds, imports and exports of industrial diamonds, the National Defense Stockpile of industrial diamonds, and the outlook for the industrial diamond market are discussed.

Structure, morphology and optical properties of undoped and MN-doped ZnO(1-x)Sx nano-powders prepared by precipitation method

NASA Astrophysics Data System (ADS)

Dejene, F. B.; Onani, M. O.; Koao, L. F.; Wako, A. H.; Motloung, S. V.; Yihunie, M. T.

2016-01-01

The undoped and Mn-doped ZnO(1-x)Sx nano-powders were successfully synthesized by precipitation method without using any capping agent. Its structure, morphology, elemental analysis, optical and luminescence properties were determined by scanning electron microscopy (SEM), energy-dispersive X-ray spectroscopy (EDS), UV-vis spectroscopy (UV) and photoluminescence spectroscopy (PL). A typical SEM image of the un-doped ZnO(1-x)Sx nanoparticles exhibit flake like structures that changes to nearly spherical particles with Mn-doping. The XRD of undoped and Mn doped ZnO(1-x)Sx pattern reveals the formation of a product indexed to the hexagonal wurtzite phase of ZnS. The nanopowders have crystallite sizes estimated from XRD measurements were in the range of 10-20 nm. All the samples showed absorption maximum of ZnO(1-x)Sx at 271 nm and high transmittance in UV and visible region, respectively. The undoped ZnO(1-x)Sx nanoparticles show strong room-temperature photoluminescence with four emission bands centering at 338 nm, 384 nm, 448 nm and 705 nm that may originate to the impurity of ZnO(1-x)Sx, existence of oxide related defects. The calculated bandgap of the nanocrystalline ZnO(1-x)Sx showed a blue-shift with respect to the Mn-doping. The PL spectra of the Mn-doped samples exhibit a strong orange emission at around 594 nm attributed to the 4T1-6A1 transition of the Mn2+ ions.

Band edge movement and structural modifications in transition metal doped TiO2 nanocrystals for the application of DSSC

NASA Astrophysics Data System (ADS)

Patle, L. B.; Huse, V. R.; Chaudhari, A. L.

2017-10-01

Nanocrystalline undoped and transition metal ion doped (TM:Cu2+, Mn2+ and Fe3+) TiO2 nanoparticles, with 1 mol% were synthesized by a simple and cost effective modified co-precipitation method at room temperature and were successfully used as photoanode for dye sensitized solar cell (DSSC). The effect of transition metal ions into TiO2 nano crystalline powder has been systematically investigated using x-ray diffraction (XRD), UV-Vis spectroscope, scanning electron microscope (SEM), transmission electron microscope (TEM) and energy dispersive x-ray spectroscopy (EDX). The results of XRD confirm nanocrystalline anatase tetragonal structure of prepared undoped and TM doped TiO2 semiconductor. The influence of doping on band edge movement has been estimated using UV-visible spectroscopy. The SEM results indicate that microscopic effect of doping on morphology of the TiO2. The peaks of EDX signify incorporation of transition metal cations into TiO2 lattice. The effect of doping on flat band potential was estimated using interpolation on Mott-Schottky plot. The performances of DSSCs of undoped and doped TiO2 photoelectrodes were investigated under light illumination. In comparison with undoped and (Cu2+, Fe3+) doped TiO2 photoanodes we found that incorporation of Mn2+ into TiO2 exhibits improvement in photoconversion efficiency (η). There is increase in photoconversion efficiency of DSSCs with Mn2+ doped TiO2 by 6% as compared to that of undoped TiO2 photoanode.

Parental Age of Onset of Cardiovascular Disease as a Predictor for Offspring Age of Onset of Cardiovascular Disease.

PubMed

Allport, Shannon Anjelica; Kikah, Ngum; Abu Saif, Nessim; Ekokobe, Fonkem; Atem, Folefac D

2016-01-01

The risk for cardiovascular disease (CVD) is higher for individuals with a first-degree relative who developed premature CVD (with a threshold at age 55 years for a male or 65 years for a female). However, little is known about the effect that each unit increase or decrease of maternal or paternal age of onset of CVD has on offspring age of onset of CVD. We hypothesized that there is an association between maternal and paternal age of onset of CVD and offspring age of onset of CVD. We used the Framingham Heart Study database and performed conditional imputation for CVD-censored parental age (i.e. parents that didn't experience onset of CVD) and Cox proportional regression analysis, with offspring's age of onset of CVD as the dependent variable and parental age of onset of CVD as the primary predictor. Modifiable risk factors in offspring, such as cigarette smoking, body mass index (BMI), diabetes mellitus, systolic blood pressure (SBP), high-density lipoprotein (HDL) level, and low-density lipoprotein (LDL) level, were controlled for. Separate analyses were performed for the association between maternal age of onset of CVD and offspring age of onset of CVD and the association between paternal age of onset of CVD and offspring age of onset of CVD. Parental age of onset of CVD was predictive of offspring age of onset of CVD for maternal age of onset of CVD (P < .0001; N = 1401) and for paternal age of onset of CVD (P = 0.0134; N = 1221). A negative estimate of the coefficient of interest signifies that late onset of cardiovascular events in parents is protective of onset of CVD in offspring. Cigarette smoking and HDL level were important associated confounders. Offspring age of onset of cardiovascular disease is significantly associated with both maternal and paternal age of onset CVD. The incorporation of the parameters, maternal or paternal age of onset of CVD, into risk estimate calculators may improve accuracy of identification of high-risk patients in clinical settings.

Effect of Zn doping on structural, optical and thermal properties of CeO2 nanoparticles

NASA Astrophysics Data System (ADS)

Ramasamy, V.; Vijayalakshmi, G.

2015-09-01

The undoped and Zn doped CeO2 nanoparticles were synthesized by chemical precipitation method at room temperature. The undoped and Zn doped CeO2 nanoparticles have been characterized by X-ray powder diffraction (XRD), Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), ultraviolet visible and photoluminescence (PL) spectroscopy, Fourier transform infrared spectroscopy (FTIR) and thermogravimetry and differential thermal analysis (TG-DTA). The cubic fluorite structures of the CeO2 nanoparticles were determined by XRD. The influence of particle size on structural parameters such as lattice parameter (a), inter planar distance (d), dislocation density (δ), microstrain (ε), lattice strain (η) and texture co-efficient (TC) were also determined. The lattice strains were determined by Williamson-Hall plot method. The effect of Zn doping with shifting of the bands were observed by UV-Vis spectroscopy and also their optical band gap were determined. The emission spectra and energy band diagram of the undoped and Zn doped samples were derived from PL spectroscopy. The structural bond vibrations of undoped and Zn doped CeO2 nanoparticles were analyzed by FTIR spectroscopy. The thermal property (weight loss and decomposition) of the sample is observed by TG-DTA curve.

Microstructural evolution of diamond growth during HFCVD

NASA Technical Reports Server (NTRS)

Singh, J.

1994-01-01

High resolution transmission electron microscopy (HRTEM) was used to study the nucleation and growth mechanism of diamond by hot filament chemical vapor deposition (HFCVD) process. A novel technique has shown a direct evidence for the formation of the diamond-like carbon layer 8-14 nm thick in which small diamond micro-crystallites were embedded. These diamond micro-crystallites were formed as a result of transformation of diamond-like carbon into diamond. The diamond micro-crystallites present in the amorphous diamond-like carbon layer provided nucleation sites for diamond growth. Large diamond crystallites were observed to grow from these micro-crystallites. The mechanism of diamond growth will be presented based on experimental findings.

Quality Assurance on Undoped CsI Crystals for the Mu2e Experiment

NASA Astrophysics Data System (ADS)

Atanov, N.; Baranov, V.; Budagov, J.; Davydov, Yu. I.; Glagolev, V.; Tereshchenko, V.; Usubov, Z.; Cervelli, F.; Di Falco, S.; Donati, S.; Morescalchi, L.; Pedreschi, E.; Pezzullo, G.; Raffaelli, F.; Spinella, F.; Colao, F.; Cordelli, M.; Corradi, G.; Diociaiuti, E.; Donghia, R.; Giovannella, S.; Happacher, F.; Martini, M.; Miscetti, S.; Ricci, M.; Saputi, A.; Sarra, I.; Echenard, B.; Hitlin, D. G.; Hu, C.; Miyashita, T.; Porter, F.; Zhang, L.; Zhu, R.-Y.; Grancagnolo, F.; Tassielli, G.; Murat, P.

2018-02-01

The Mu2e experiment is constructing a calorimeter consisting of 1,348 undoped CsI crystals in two disks. Each crystal has a dimension of 34 x 34 x 200 mm, and is readout by a large area silicon PMT array. A series of technical specifications was defined according to physics requirements. Preproduction CsI crystals were procured from three firms: Amcrys, Saint-Gobain and Shanghai Institute of Ceramics. We report the quality assurance on crystal's scintillation properties and their radiation hardness against ionization dose and neutrons. With a fast decay time of 30 ns and a light output of more than 100 p.e./MeV measured with a bi-alkali PMT, undoped CsI crystals provide a cost-effective solution for the Mu2e experiment.

Photon beam position monitor

DOEpatents

Kuzay, T.M.; Shu, D.

1995-02-07

A photon beam position monitor is disclosed for use in the front end of a beamline of a high heat flux and high energy photon source such as a synchrotron radiation storage ring detects and measures the position and, when a pair of such monitors are used in tandem, the slope of a photon beam emanating from an insertion device such as a wiggler or an undulator inserted in the straight sections of the ring. The photon beam position monitor includes a plurality of spaced blades for precisely locating the photon beam, with each blade comprised of chemical vapor deposition (CVD) diamond with an outer metal coating of a photon sensitive metal such as tungsten, molybdenum, etc., which combination emits electrons when a high energy photon beam is incident upon the blade. Two such monitors are contemplated for use in the front end of the beamline, with the two monitors having vertically and horizontally offset detector blades to avoid blade ''shadowing''. Provision is made for aligning the detector blades with the photon beam and limiting detector blade temperature during operation. 18 figs.

Online Luminosity Measurement at CMS for Energy Frontier Physics after LS1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stickland, David P.

2015-09-20

This proposal was directed towards the measurement of Bunch-by-Bunch and Total Luminosity in the CMS experiment using Single-Crystal Diamond (sCVD) installed close to the Interaction Point - known as the Fast Beam Conditions Monitor, or BCM1F detector. The proposal was successfully carried out and in February 2015 CMS installed its upgraded BCM1F detector. At first collisions in June 2015 the BCM1F was used as the primary luminometer, then in August 2015 a Van De Meer scan has been carried out and the detailed luminometer calibration is under study. In all aspects of performance measurement the upgraded detector has satisfied itsmore » design parameters and as an overview of its performance in this report will show, we have high expectations that the detector will be a powerful addition to the luminosity measurement at CMS and LHC. The proposed upgrade of BCM1F was a collaboration of CMS Institutes in Germany (DESY-Zeuthen) and the USA (Princeton) and of CERN itself.« less

Fabrication of Transparent Protective Diamond-Like Carbon Films on Polymer

NASA Astrophysics Data System (ADS)

Baek, Sang-min; Shirafuji, Tatsuru; Saito, Nagahiro; Takai, Osamu

2011-08-01

Si doped hydrogenated amorphous carbon (Si-DLC) films as a candidate protection coating for polycarbonate (PC) were prepared using a pulse-biased inductively coupled plasma chemical vapor deposition (ICP-CVD) system with a gas mixture of acetylene (C2H2) and tetramethylsilane [Si(CH3)4]. The effects of Si incorporation on the structure and optical properties of the Si-DLC films were investigated. In addition, plasma pretreatments with O2, N2, and Ar gases were carried out to enhance the adhesion strength of Si-DLC films on polycarbonate. Structural characterization through Raman and X-ray photoelectron spectroscopy (XPS) analyses showed that the incorporation of Si atoms in DLC films leads to an increase in the optical band gap (Eopt) with the formation of sp3 C-Si bonds. O2 plasma pretreatment improved the strength of adhesion of the Si-DLC films to polycarbonate, while Ar and N2 plasma treatments did not. This can be explained by the formation of an activated dense interfacial layer by O2 plasma pretreatment.

High Frequency, High Gradient Dielectric Wakefield Acceleration Experiments at SLAC and BNL

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rosenzweig, James; /UCLA; Travish, Gil

Given the recent success of >GV/m dielectric wakefield accelerator (DWA) breakdown experiments at SLAC, and follow-on coherent Cerenkov radiation production at the UCLA Neptune, a UCLA-USC-SLAC collaboration is now implementing a new set of experiments that explore various DWA scenarios. These experiments are motivated by the opportunities presented by the approval of FACET facility at SLAC, as well as unique pulse-train wakefield drivers at BNL. The SLAC experiments permit further exploration of the multi-GeV/m envelope in DWAs, and will entail investigations of novel materials (e.g. CVD diamond) and geometries (Bragg cylindrical structures, slab-symmetric DWAs), and have an over-riding goal ofmore » demonstrating >GeV acceleration in {approx}33 cm DWA tubes. In the nearer term before FACET's commissioning, we are planning measurements at the BNL ATF, in which we drive {approx}50-200 MV/m fields with single pulses or pulse trains. These experiments are of high relevance to enhancing linear collider DWA designs, as they will demonstrate potential for efficient operation with pulse trains.« less

CVD Polymers for Devices and Device Fabrication.

PubMed

Wang, Minghui; Wang, Xiaoxue; Moni, Priya; Liu, Andong; Kim, Do Han; Jo, Won Jun; Sojoudi, Hossein; Gleason, Karen K

2017-03-01

Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Cardiovascular Disease Prevalence and Risk Factors of Persons with Mental Retardation

ERIC Educational Resources Information Center

Draheim, Christopher C.

2006-01-01

This paper reviews the recent literature on cardiovascular disease (CVD) prevalence, CVD-related mortality, physiological CVD risk factors, and behavioral CVD risk factors in adults with mental retardation (MR). The literature on the potential influences of modifiable behavioral CVD risk factors and the physiological CVD risk factors are also…

Family history of cardiovascular disease (CVD), perceived CVD risk, and health-related behavior: A review of the literature

PubMed Central

Imes, Christopher C.; Lewis, Frances Marcus

2012-01-01

Background Over 82 million Americans have one or more forms of cardiovascular disease (CVD), accounting for 32.8% of all deaths in the United States. Although the evidence for the familial aggregation of CVD is strong, the relationship between family history (FH) of CVD, perceived risk for CVD and their relationship to health-related behavior is poorly understood. Objective The objective of this article is to review and summarize the published research on the relationship between a FH of CVD, an individual’s perceived risk, and health-related behavior in order to make recommendations for clinical practice and future research. Methods A literature search was conducted using PubMed, CINAHL Plus, and PsycINFO to identify articles that examined the relationship between a FH of CVD, perceived CVD risk, and health-promoting behaviors. A total of 263 unique articles were reviewed. Two hundred thirty-eight were excluded, resulting in a total of 25 articles included in the paper. Results There was a positive relationship between a reported FH of CVD and perceived risk. However, the relationship between a FH of CVD and health-related behavior change and perceived risk and behavior change was inconsistent. Conclusions A person’s awareness of their FH of CVD or their own risk for CVD is not a sufficient predictor of changes in their health-related behavior. Future studies are needed to better explain the processes by which perceived CVD risk or FH of CVD can be used to affect health-related behavior changes. It appears that both FH and perceived personal risk for CVD are necessary but not sufficient conditions to change health-related behavior in high-risk populations. Future studies should also test interventions that help individuals with a FH of CVD attribute increased personal risk to themselves for developing CVD, while providing lifestyle management options to minimize their risk. PMID:23321782

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Zhangwei; Baker, Ian; Guo, Wei

We investigated the effects of cold rolling followed by annealing on the mechanical properties and dislocation substructure evolution of undoped and 1.1 at. % carbon-doped Fe 40.4Ni 11.3Mn 34.8Al 7.5Cr 6 high entropy alloys (HEAs). X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atom probe tomography (APT) were employed to characterize the microstructures. The as-cast HEAs were coarse-grained and single phase f.c.c., whereas the thermo-mechanical treatment caused recrystallization (to fine grain sizes) and precipitation (a B2 phase for the undoped HEA; and a B2 phase, and M 23C 6 and M 7C 3 carbides for the C-dopedmore » HEA). Carbon, which was found to have segregated to the grain boundaries using APT, retarded recrystallization. The reduction in grain size resulted in a sharp increase in strength, while the precipitation, which produced only a small increase in strength, probably accounted for the small decrease in ductility for both undoped and C-doped HEAs. For both undoped and C-doped HEAs, the smaller grain-sized material initially exhibited higher strain hardening than the coarse-grained material but showed a much lower strain hardening at large tensile strains. Wavy slip in the undoped HEAs and planar slip in C-doped HEAs were found at the early stages of deformation irrespective of grain size. At higher strains, dislocation cell structures formed in the 19 μm grain-sized undoped HEA, while microbands formed in the 23 μm grain-sized C-doped HEA. Conversely, localized dislocation clusters were found in both HEAs at the finest grain sizes (5 μm). The inhibition of grain subdivision by the grain boundaries and precipitates lead to the transformation from regular dislocation configurations consisting of dislocation-cells and microbands to irregular dislocation configurations consisting of localized dislocation clusters, which further account for the decrease in ductility. Our investigation of the formation mechanism and strain hardening of dislocation cells and microbands could benefit future structural material design.« less

Lower pressure synthesis of diamond material

DOEpatents

Lueking, Angela; Gutierrez, Humberto; Narayanan, Deepa; Burgess Clifford, Caroline E.; Jain, Puja

2010-07-13

Methods of synthesizing a diamond material, particularly nanocrystalline diamond, diamond-like carbon and bucky diamond are provided. In particular embodiments, a composition including a carbon source, such as coal, is subjected to addition of energy, such as high energy reactive milling, producing a milling product enriched in hydrogenated tetrahedral amorphous diamond-like carbon compared to the coal. A milling product is treated with heat, acid and/or base to produce nanocrystalline diamond and/or crystalline diamond-like carbon. Energy is added to produced crystalline diamond-like carbon in particular embodiments to produce bucky diamonds.

Geographic Variation in Morbidity and Mortality of Cerebrovascular Diseases in Korea during 2011-2015.

PubMed

Lee, Juyeon; Bahk, Jinwook; Kim, Ikhan; Kim, Yeon-Yong; Yun, Sung-Cheol; Kang, Hee-Yeon; Lee, Jeehye; Park, Jong Heon; Shin, Soon-Ae; Khang, Young-Ho

2018-03-01

Little is known about within-country variation in morbidity and mortality of cerebrovascular diseases (CVDs). Geographic differences in CVD morbidity and mortality have yet to be properly examined. This study examined geographic variation in morbidity and mortality of CVD, neighborhood factors for CVD morbidity and mortality, and the association between CVD morbidity and mortality across the 245 local districts in Korea during 2011-2015. District-level health care utilization and mortality data were obtained to estimate age-standardized CVD morbidity and mortality. The bivariate Pearson correlation was used to examine the linear relationship between district-level CVD morbidity and mortality Z-scores. Simple linear regression and multivariate analyses were conducted to investigate the associations of area characteristics with CVD morbidity, mortality, and discrepancies between morbidity and mortality. Substantial variation was found in CVD morbidity and mortality across the country, with 1074.9 excess CVD inpatients and 73.8 excess CVD deaths per 100,000 between the districts with the lowest and highest CVD morbidity and mortality, respectively. Higher rates of CVD admissions and deaths were clustered in the noncapital regions. A moderate geographic correlation between CVD morbidity and mortality was found (Pearson correlation coefficient = .62 for both genders). Neighborhood level indicators for socioeconomic disadvantages, undersupply of health care resources, and unhealthy behaviors were positively associated with CVD morbidity and mortality and the relative standing of CVD mortality vis-à-vis morbidity. Policy actions targeting life-course socioeconomic conditions, equitable distribution of health care resources, and behavioral risk factors may help reduce geographic differences in CVD morbidity and mortality in Korea. Copyright © 2018 National Stroke Association. Published by Elsevier Inc. All rights reserved.

Vivir Con Un Corazón Saludable: a Community-Based Educational Program Aimed at Increasing Cardiovascular Health Knowledge in High-Risk Hispanic Women.

PubMed

Romero, Daniela C; Sauris, Aileen; Rodriguez, Fátima; Delgado, Daniela; Reddy, Ankita; Foody, JoAnne M

2016-03-01

Hispanic women suffer from high rates of cardiometabolic risk factors and an increasingly disproportionate burden of cardiovascular disease (CVD). Particularly, Hispanic women with limited English proficiency suffer from low levels of CVD knowledge associated with adverse CVD health outcomes. Thirty-two predominantly Spanish-speaking Hispanic women completed, Vivir Con un Corazón Saludable (VCUCS), a culturally tailored Spanish language-based 6-week intensive community program targeting CVD health knowledge through weekly interactive health sessions. A 30-question CVD knowledge questionnaire was used to assess mean changes in CVD knowledge at baseline and postintervention across five major knowledge domains including CVD epidemiology, dietary knowledge, medical information, risk factors, and heart attack symptoms. Completion of the program was associated with a statistically significant (p < 0.001) increase in total mean CVD knowledge scores from 39 % (mean 11.7/30.0) to 66 % (mean 19.8/30.0) postintervention consistent with a 68 % increase in overall mean CVD scores. There was a statistically significant (p < 0.001) increase in mean knowledge scores across all five CVD domains. A culturally tailored Spanish language-based health program is effective in increasing CVD awareness among high CVD risk Hispanic women with low English proficiency and low baseline CVD knowledge.

Photocatalytic activity of undoped and Ag-doped TiO{sub 2}-supported zeolite for humic acid degradation and mineralization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lazau, C.; Ratiu, C.; National Institute for Research and Development in Microtechnologies, Erou Iancu Nicolae Street, 077190 Bucharest

2011-11-15

Highlights: {yields} Hybrid materials based on natural zeolite and TiO{sub 2} obtained by solid-state reaction. {yields} XRD proved the presence of anatase form of undoped and Ag-doped TiO{sub 2} onto zeolite. {yields} FT-IR spectra evidenced the presence on TiO{sub 2} bounded at the zeolite network. {yields} Ag-doped TiO{sub 2} onto zeolitic matrix exhibited an enhanced photocatalytic activity. -- Abstract: The hybrid materials based on natural zeolite and undoped and Ag-doped TiO{sub 2}, i.e., Z-Na-TiO{sub 2} and Z-Na-TiO{sub 2}-Ag, were successfully synthesized by solid-state reaction in microwave-assisted hydrothermal conditions. Undoped TiO{sub 2} and Ag-doped TiO{sub 2} nanocrystals were previously synthesized bymore » sol-gel method. The surface characterization of undoped TiO{sub 2}/Ag-doped TiO{sub 2} and natural zeolite hybrid materials has been investigated by X-ray diffraction, DRUV-VIS spectroscopy, FT-IR spectroscopy, BET analysis, SEM microscopy and EDX analysis. The results indicated that anatase TiO{sub 2} is the dominant crystalline type as spherical form onto zeolitic matrix. The presence of Ag into Z-Na-TiO{sub 2}-Ag was confirmed by EDX analysis. The DRUV-VIS spectra showed that Z-Na-TiO{sub 2}-Ag exhibited absorption within the range of 400-500 nm in comparison with Z-Na-TiO{sub 2} catalyst. The enhanced photocatalytic activity of Z-Na-TiO{sub 2}-Ag catalyst is proved through the degradation and mineralization of humic acid under ultraviolet and visible irradiation.« less

Detection and analysis of diamond fingerprinting feature and its application

NASA Astrophysics Data System (ADS)

Li, Xin; Huang, Guoliang; Li, Qiang; Chen, Shengyi

2011-01-01

Before becoming a jewelry diamonds need to be carved artistically with some special geometric features as the structure of the polyhedron. There are subtle differences in the structure of this polyhedron in each diamond. With the spatial frequency spectrum analysis of diamond surface structure, we can obtain the diamond fingerprint information which represents the "Diamond ID" and has good specificity. Based on the optical Fourier Transform spatial spectrum analysis, the fingerprinting identification of surface structure of diamond in spatial frequency domain was studied in this paper. We constructed both the completely coherent diamond fingerprinting detection system illuminated by laser and the partially coherent diamond fingerprinting detection system illuminated by led, and analyzed the effect of the coherence of light source to the diamond fingerprinting feature. We studied rotation invariance and translation invariance of the diamond fingerprinting and verified the feasibility of real-time and accurate identification of diamond fingerprint. With the profit of this work, we can provide customs, jewelers and consumers with a real-time and reliable diamonds identification instrument, which will curb diamond smuggling, theft and other crimes, and ensure the healthy development of the diamond industry.

Anisotropic diamond etching through thermochemical reaction between Ni and diamond in high-temperature water vapour.

PubMed

Nagai, Masatsugu; Nakanishi, Kazuhiro; Takahashi, Hiraku; Kato, Hiromitsu; Makino, Toshiharu; Yamasaki, Satoshi; Matsumoto, Tsubasa; Inokuma, Takao; Tokuda, Norio

2018-04-27

Diamond possesses excellent physical and electronic properties, and thus various applications that use diamond are under development. Additionally, the control of diamond geometry by etching technique is essential for such applications. However, conventional wet processes used for etching other materials are ineffective for diamond. Moreover, plasma processes currently employed for diamond etching are not selective, and plasma-induced damage to diamond deteriorates the device-performances. Here, we report a non-plasma etching process for single crystal diamond using thermochemical reaction between Ni and diamond in high-temperature water vapour. Diamond under Ni films was selectively etched, with no etching at other locations. A diamond-etching rate of approximately 8.7 μm/min (1000 °C) was successfully achieved. To the best of our knowledge, this rate is considerably greater than those reported so far for other diamond-etching processes, including plasma processes. The anisotropy observed for this diamond etching was considerably similar to that observed for Si etching using KOH.

Work stress and cardiovascular disease: a life course perspective.

PubMed

Li, Jian; Loerbroks, Adrian; Bosma, Hans; Angerer, Peter

2016-05-25

Individuals in employment experience stress at work, and numerous epidemiological studies have documented its negative health effects, particularly on cardiovascular disease (CVD). Although evidence on the various interrelationships between work stress and CVD has been accumulated, those observations have not yet been conceptualized in terms of a life course perspective. Using the chain of risk model, we would like to propose a theoretical model incorporating six steps: (1) work stress increases the risk of incident CVD in healthy workers. (2) Among those whose work ability is not fully and permanently damaged, work stress acts as a determinant of the process of return to work after CVD onset. (3) CVD patients experience higher work stress after return to work. (4) Work stress increases the risk of recurrent CVD in workers with prior CVD. (5) CVD patients who fully lose their work ability transit to disability retirement. (6) Disability retirees due to CVD have an elevated risk of CVD mortality. The life course perspective might facilitate an in-depth understanding of the diverse interrelationships between work stress and CVD, thereby leading to work stress management interventions at each period of the lifespan and three-level prevention of CVD.

Quality Assurance on Undoped CsI Crystals for the Mu2e Experiment

DOE PAGES

Atanov, N.; Baranov, V.; Budagov, J.; ...

2017-12-21

The Mu2e experiment is constructing a calorimeter consisting of 1,348 undoped CsI crystals in two disks. Each crystal has a dimension of 34 x 34 x 200 mm 3, and is readout by a large area silicon PMT array. A series of technical specifications was defined according to physics requirements. Preproduction CsI crystals were procured from three firms: Amcrys, Saint-Gobain and Shanghai Institute of Ceramics. We report the quality assurance on crystal's scintillation properties and their radiation hardness against ionization dose and neutrons. With a fast decay time of 30 ns and a light output of more than 100 p.e./MeVmore » measured with a bi-alkali PMT, undoped CsI crystals provide a cost-effective solution for the Mu2e experiment.« less

Correlated vortex pinning in Si-nanoparticle doped MgB 2

NASA Astrophysics Data System (ADS)

Kušević, I.; Babić, E.; Husnjak, O.; Soltanian, S.; Wang, X. L.; Dou, S. X.

2004-12-01

The magnetoresistivity and critical current density of well characterized Si-nanoparticle doped and undoped Cu-sheathed MgB 2 tapes have been measured at temperatures T≥28 K in magnetic fields B≤0.9 T. The irreversibility line Birr( T) for doped tape shows a stepwise variation with a kink around 0.3 T. Such Birr( T) variation is typical for high-temperature superconductors with columnar defects (a kink occurs near the matching field Bϕ) and is very different from a smooth Birr( T) variation in undoped MgB 2 samples. The microstructure studies of nanoparticle doped MgB 2 samples show uniformly dispersed nanoprecipitates, which probably act as a correlated disorder. The observed difference between the field variations of the critical current density and pinning force density of the doped and undoped tape supports the above findings.

Quality Assurance on Undoped CsI Crystals for the Mu2e Experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atanov, N.; Baranov, V.; Budagov, J.

The Mu2e experiment is constructing a calorimeter consisting of 1,348 undoped CsI crystals in two disks. Each crystal has a dimension of 34 x 34 x 200 mm 3, and is readout by a large area silicon PMT array. A series of technical specifications was defined according to physics requirements. Preproduction CsI crystals were procured from three firms: Amcrys, Saint-Gobain and Shanghai Institute of Ceramics. We report the quality assurance on crystal's scintillation properties and their radiation hardness against ionization dose and neutrons. With a fast decay time of 30 ns and a light output of more than 100 p.e./MeVmore » measured with a bi-alkali PMT, undoped CsI crystals provide a cost-effective solution for the Mu2e experiment.« less

Magnetotransport studies of mobility limiting mechanisms in undoped Si/SiGe heterostructures

NASA Astrophysics Data System (ADS)

Mi, X.; Hazard, T. M.; Payette, C.; Wang, K.; Zajac, D. M.; Cady, J. V.; Petta, J. R.

2015-07-01

We perform detailed magnetotransport studies on two-dimensional electron gases (2DEGs) formed in undoped Si/SiGe heterostructures in order to identify the electron mobility limiting mechanisms. By analyzing data from 26 different heterostructures, we observe a strong correlation between the background oxygen concentration in the Si quantum well and the maximum mobility. The highest-quality wafer supports a 2DEG with mobility μ =160 000 cm 2/Vs at a density n =2.17 ×1011 /cm 2 and exhibits a metal-to-insulator transition at a critical density nc=0.46 ×1011 /cm 2. We extract a valley splitting Δv˜150 μ eV at a magnetic field B =1.8 T. These results provide evidence that undoped Si/SiGe heterostructures are suitable for the fabrication of few-electron quantum dots.

Cardiovascular disease risk factors and the perception of general health among male law enforcement officers: encouraging behavioral change.

PubMed

Ramey, Sandra L

2003-05-01

The relationship among cardiovascular disease (CVD) morbidity, risk factors (including stress), and the perception of health among male law enforcement officers (LEOs) compared to men in the general population were examined in this study. Self reported prevalence of CVD and CVD risk factors among currently employed male LEOs from nine states (n = 2,818) were compared to those of other men in the same states (n = 9,650 for CVD risk factors, n = 3,147 for CVD prevalence). Perceived stress in LEOs was assessed to determine if it affected the relationship between CVD prevalence and CVD risk factors. Cross tabulated simple percentages showed CVD was less prevalent in the LEO group than among the general population. The best predictor variables for CVD were perceived stress, time in the profession, and hypertension. The LEO group had greater prevalence of hypercholesterolemia, overweight, and tobacco use than the general population. However, a greater percentage of LEOs perceived their health as "good to excellent" compared to men in the general population. Using multivariate analysis of variance (MANOVA) it was determined that perceived stress was associated with CVD in the LEO group and three CVD risk factors (i.e., cholesterol, hypertension, physical activity) were significantly affected by perceived stress. Among susceptible officers, stress may contribute to CVD development as well as potentiate several CVD risk factors. However, an apparent lack of association exists between perception of general health and CVD risk in LEOs.

Diamond fiber field emitters

DOEpatents

Blanchet-Fincher, Graciela B.; Coates, Don M.; Devlin, David J.; Eaton, David F.; Silzars, Aris K.; Valone, Steven M.

1996-01-01

A field emission electron emitter comprising an electrode formed of at least one diamond, diamond-like carbon or glassy carbon composite fiber, said composite fiber having a non-diamond core and a diamond, diamond-like carbon or glassy carbon coating on said non-diamond core, and electronic devices employing such a field emission electron emitter.

Risks of restrictive red blood cell transfusion strategies in patients with cardiovascular disease (CVD): a meta-analysis.

PubMed

Cortés-Puch, I; Wiley, B M; Sun, J; Klein, H G; Welsh, J; Danner, R L; Eichacker, P Q; Natanson, C

2018-04-19

To evaluate the risks of restrictive red blood cell transfusion strategies (haemoglobin 7-8 g dL -1 ) in patients with and without known cardiovascular disease (CVD). Recent guidelines recommend restrictive strategies for CVD patients hospitalised for non-CVD indications, patients without known CVD and patients hospitalised for CVD corrective procedures. Database searches were conducted through December 2017 for randomised clinical trials that enrolled patients with and without known CVD, hospitalised either for CVD-corrective procedures or non-cardiac indications, comparing effects of liberal with restrictive strategies on major adverse coronary events (MACE) and death. In CVD patients not undergoing cardiac interventions, a liberal strategy decreased (P = 0·01) the relative risk (95% CI) (RR) of MACE [0·50 (0·29-0·86)] (I 2  = 0%). Among patients without known CVD, the incidence of MACE was lower (1·7 vs 3·9%), and the effect of a liberal strategy on MACE [0·79, (0·39-1·58)] was smaller and non-significant but not different from CVD patients (P = 0·30). Combining all CVD and non-CVD patients, a liberal strategy decreased MACE [0·59, (0·39-0·91); P = 0·02]. Conversely, among studies reporting mortality, a liberal strategy decreased mortality in CVD patients (11·7% vs·13·3%) but increased mortality (19·2% vs 18·0%) in patients without known CVD [interaction P = 0·05; ratio of RR 0·73, (0·53-1·00)]. A liberal strategy also did not benefit patients undergoing cardiac surgery; data were insufficient for percutaneous cardiac procedures. In patients hospitalised for non-cardiac indications, liberal transfusion strategies are associated with a decreased risk of MACE in both those with and without known CVD. However, this only provides a survival benefit to CVD patients not admitted for CVD-corrective procedures. © 2018 British Blood Transfusion Society.

Chronic Kidney Disease as a Predictor of Cardiovascular Disease (From the Framingham Heart Study)

PubMed Central

Parikh, Nisha I.; Hwang, Shih-Jen; Larson, Martin G.; Levy, Daniel; Fox, Caroline S.

2008-01-01

Chronic kidney disease (CKD) is a risk factor for cardiovascular disease (CVD), although shared risk factors may mediate much of the association. We related CKD and CVD in the setting of specific CVD risk factors and determined whether more advanced CKD was a CVD risk equivalent. The Framingham Heart Study original cohort (n=2471, mean age 68 years, 58.9% women) was studied. Glomerular filtration rate (eGFR) was estimated using the simplified Modification of Diet in Renal Disease Study equation. CKD was defined as eGFR < 59 mL/min per 1.73 m2 (women) and < 64 (men) and Stage 3b CKD defined as eGFR 30-44 (women) and 30-50 (men). Cox Proportional Hazard models adjusting for CVD risk factors were used to relate CKD to CVD. We tested for effect modification by CVD risk factors. Overall, 23.2% of the study sample had CKD (n=574; mean eGFR 50 mL/min per 1.73 m2) and 5.3% had Stage 3b CKD (n=131; mean eGFR 42 mL/min per 1.73 m2). In multivariable models (mean follow-up time 16 years), Stage 3 CKD was marginally associated with CVD (HR=1.17, 95% CI 0.99-1.38, p=0.06), whereas Stage 3b CKD was associated with CVD [HR=1.41, 95% CI 1.05-1.91, p=0.02]. Upon testing CVD risk equivalency, the risk of CVD for Stage 3b CKD among participants with prior CVD was significantly lower as compared to participants with prior CVD and no Stage 3b CKD (age- and sex-adjusted HR for CVD = 0.66 [95% CI 0.47 to 0.91], p=0.01). Low HDL modified the association between CKD and CVD (p-value=0.004 for interaction). Stage 3b CKD is associated with CVD but is not a CVD risk equivalent. In conclusion, CVD risk in the setting of CKD is higher in the setting of low HDL cholesterol. PMID:18572034

Investigations on diamond nanostructuring of different morphologies by the reactive-ion etching process and their potential applications.

PubMed

Kunuku, Srinivasu; Sankaran, Kamatchi Jothiramalingam; Tsai, Cheng-Yen; Chang, Wen-Hao; Tai, Nyan-Hwa; Leou, Keh-Chyang; Lin, I-Nan

2013-08-14

We report the systematic studies on the fabrication of aligned, uniform, and highly dense diamond nanostructures from diamond films of various granular structures. Self-assembled Au nanodots are used as a mask in the self-biased reactive-ion etching (RIE) process, using an O2/CF4 process plasma. The morphology of diamond nanostructures is a close function of the initial phase composition of diamond. Cone-shaped and tip-shaped diamond nanostructures result for microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films, whereas pillarlike and grasslike diamond nanostructures are obtained for Ar-plasma-based and N2-plasma-based ultrananocrystalline diamond (UNCD) films, respectively. While the nitrogen-incorporated UNCD (N-UNCD) nanograss shows the most-superior electron-field-emission properties, the NCD nanotips exhibit the best photoluminescence properties, viz, different applications need different morphology of diamond nanostructures to optimize the respective characteristics. The optimum diamond nanostructure can be achieved by proper choice of granular structure of the initial diamond film. The etching mechanism is explained by in situ observation of optical emission spectrum of RIE plasma. The preferential etching of sp(2)-bonded carbon contained in the diamond films is the prime factor, which forms the unique diamond nanostructures from each type of diamond films. However, the excited oxygen atoms (O*) are the main etching species of diamond film.

Conduction in Polydiacetylene Bilayers.

DTIC Science & Technology

1979-12-04

bilayers. The basic apparatus for doping is shown in figure 2. The process consists of passing dry nitrogen over crystalline iodine and then over the...This indicates that the polymer backbone has little effect in the conduction machanism of a dark undoped sample but only comes into play upon...almost none to doping. This indicates that the polymer backbone has little effect in the conduction machanism of a dark undoped sample but only comes into

Non-aqueous solution preparation of doped and undoped lixmnyoz

DOEpatents

Boyle, Timothy J.; Voigt, James A.

1997-01-01

A method for generation of phase-pure doped and undoped Li.sub.x Mn.sub.y O.sub.z precursors. The method of this invention uses organic solutions instead of aqueous solutions or nonsolution ball milling of dry powders to produce phase-pure precursors. These precursors can be used as cathodes for lithium-polymer electrolyte batteries. Dopants may be homogeneously incorporated to alter the characteristics of the powder.

Plastic Schottky-barrier solar cells

DOEpatents

Waldrop, J.R.; Cohen, M.J.

1981-12-30

A photovoltaic cell structure is fabricated from an active medium including an undoped polyacetylene, organic semiconductor. When a film of such material is in rectifying contact with a metallic area electrode, a Schottky-barrier junction is obtained within the body of the cell structure. Also, a gold overlayer passivates a magnesium layer on the undoped polyacetylene film. With the proper selection and location of elements a photovoltaic cell structure and solar cell are obtained.

Disinfection effects of undoped and silver-doped ceria powders of nanometer crystallite size

PubMed Central

Tsai, Dah-Shyang; Yang, Tzu-Sen; Huang, Yu-Sheng; Peng, Pei-Wen; Ou, Keng-Liang

2016-01-01

Being endowed with an ability of capturing and releasing oxygen, the ceria surface conventionally assumes the role of catalyzing redox reactions in chemistry. This catalytic effect also makes possible its cytotoxicity toward microorganisms at room temperature. To study this cytotoxicity, we synthesized the doped and undoped ceria particles of 8–9 nm in size using an inexpensive precipitation method and evaluated their disinfecting aptitudes with the turbidimetric and plate count methods. Among the samples being analyzed, the silver-doped ceria exhibits the highest sterilization ability, yet the undoped ceria is the most intriguing. The disinfection effect of undoped ceria is moderate in magnitude, demanding a physical contact between the ceria surface and bacteria cell wall, or the redox catalysis that can damage the cell wall and result in the cell killing. Evidently, this effect is short-range and depends strongly on dispersion of the nanoparticles. In contrast, the disinfection effects of silver-doped ceria reach out several millimeters since it releases silver ions to poison the surrounding microorganisms. Additionally, the aliovalent silver substitution creates more ceria defects. The synergetic combination, silver poisoning and heterogeneous redox catalysis, lifts and extends the disinfecting capability of silver-doped ceria to a superior level. PMID:27330294

Transport properties of undoped and Br-doped PbTe sintered at high-temperature and pressure >=4.0 GPa

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Yongkwan; McGuire, Michael A.; Malik, Abds-Sami, E-mail: abds-sami.malik@diamondinnovations.co

2009-10-15

The thermoelectric properties of nominally undoped PbTe and Br doped PbTe materials sintered at high-pressure and high-temperature (HPHT) have been studied. All samples show n-type semiconducting behavior with negative thermopower. For undoped PbTe, four different HPHT treatments were performed at pressures between 4.0 and 6.5 GPa. PbTe doped with Br at 0.5, 1.0, 2.0, 3.0x10{sup 19} cm{sup -3} was HPHT treated at 4.0 GPa and 1045 deg. C. As the dopant concentration increases, the absolute thermopower decreases, thermal conductivity increases, and electrical resistivity decreases. At a nominal dopant concentration of 1.0x10{sup 19} cm{sup -3}, carrier mobility of 1165 cm{sup 2}/Vmore » s and dimensionless thermoelectric figure-of-merit, ZT, of around 0.27 at 300 K were obtained. These results demonstrate that HPHT post-processing is a viable and controllable way of tuning the thermoelectric properties of PbTe-based materials. - Abstract: The effect, on thermoelectric properties, of sintering undoped and Br doped PbTe at pressures >=4.0 GPa and 1045 deg. C are reported and compared with conventionally sintered materials. Display Omitted« less

Gd{sup 3+} incorporated ZnO nanoparticles: A versatile material

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Surender, E-mail: surender40@gmail.com; Sahare, P.D.

Graphical abstract: - Highlights: • Chemically synthesized Gd{sup 3+} doped ZnO nanoparticles. • The broad visible emission of the ZnO is dependent on the surface defects and can be tailored by Gd{sup 3+} doing. • PL and magnetic properties are modified by Gd{sup 3+} doping. • Photocatalysis experiment reveals that the ZnO: Gd{sup 3+} degrades the Rh B dye faster than the undoped ZnO. - Abstract: Gd{sup 3+} doped ZnO nanoparticles are synthesized by wet chemical route method and investigated through structural, optical, magnetic and photocatalytic properties. Transmission Electron Microscopy technique has been performed on undoped and Gd{sup 3+} dopedmore » ZnO nanoparticles. X-ray diffraction, X-ray photoelectron spectroscopy and Raman analyses are carried out in order to examine the desired phase formation and substitution of Gd{sup 3+} in the ZnO matrix. Gd{sup 3+} doped ZnO nanoparticles show enhanced photoluminescent and ferromagnetic properties as compared to undoped ZnO. The broad visible emission of ZnO is found to be largely dependent on the surface defects and these surface defects can be tailored by Gd{sup 3+} doping concentration. Furthermore, Gd{sup 3+} doped ZnO nanoparticles also show improved photocatalytic properties as compared with undoped ZnO nanoparticles under ultraviolet irradiation.« less

Effect of solvent volume on the physical properties of undoped and fluorine doped tin oxide films deposited using a low-cost spray technique

NASA Astrophysics Data System (ADS)

Muruganantham, G.; Ravichandran, K.; Saravanakumar, K.; Ravichandran, A. T.; Sakthivel, B.

2011-12-01

Undoped and fluorine doped tin oxide films were deposited from starting solutions having different values of solvent volume (10-50 ml) by employing a low cost and simplified spray technique using perfume atomizer. X-ray diffraction studies showed that there was a change in the preferential orientation from (2 1 1) plane to (1 1 0) plane as the volume of the solvent was increased. The sheet resistance ( Rsh) of undoped SnO 2 film was found to be minimum (13.58 KΩ/□) when the solvent volume was lesser (10 ml) and there was a sharp increase in Rsh for higher values of solvent volume. Interestingly, it was observed that while the Rsh increases sharply with the increase in solvent volume for undoped SnO 2 films, it decreases gradually in the case of fluorine doped SnO 2 films. The quantitative analysis of EDAX confirmed that the electrical resistivity of the sprayed tin oxide film was mainly governed by the number of oxygen vacancies and the interstitial incorporation of Sn atoms which in turn was governed by the impinging flux on the hot substrate. The films were found to have good optical characteristics suitable for opto-electronic devices.

Diamond Synthesis Employing Nanoparticle Seeds

NASA Technical Reports Server (NTRS)

Uppireddi, Kishore (Inventor); Morell, Gerardo (Inventor); Weiner, Brad R. (Inventor)

2014-01-01

Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

Diamond tool machining of materials which react with diamond

DOEpatents

Lundin, Ralph L.; Stewart, Delbert D.; Evans, Christopher J.

1992-01-01

Apparatus for the diamond machining of materials which detrimentally react with diamond cutting tools in which the cutting tool and the workpiece are chilled to very low temperatures. This chilling halts or retards the chemical reaction between the workpiece and the diamond cutting tool so that wear rates of the diamond tool on previously detrimental materials are comparable with the diamond turning of materials which do not react with diamond.

All diamond self-aligned thin film transistor

DOEpatents

Gerbi, Jennifer [Champaign, IL

2008-07-01

A substantially all diamond transistor with an electrically insulating substrate, an electrically conductive diamond layer on the substrate, and a source and a drain contact on the electrically conductive diamond layer. An electrically insulating diamond layer is in contact with the electrically conductive diamond layer, and a gate contact is on the electrically insulating diamond layer. The diamond layers may be homoepitaxial, polycrystalline, nanocrystalline or ultrananocrystalline in various combinations.A method of making a substantially all diamond self-aligned gate transistor is disclosed in which seeding and patterning can be avoided or minimized, if desired.

Factors associated with blue-collar workers' risk perception of cardiovascular disease.

PubMed

Hwang, Won Ju; Hong, Oisaeng; Kim, Mi Ja

2012-12-01

The purpose of this study was to investigate the contribution of actual cardiovascular disease (CVD) risk, as well as, individual, psychosocial, and work-related factors as predictors of CVD risk perception among Korean blue-collar workers. The participants were 238 Korean blue-collar workers who worked in small companies. Data were collected through a survey; anthropometric and blood pressure measures; and blood sampling for lipid levels. Blue-collar workers had high actual CVD risk and low CVD risk perception. The significant predictors of risk perception included perceived health status, alcohol consumption, knowledge of CVD risk, actual CVD risk, decision latitude, and shift work. The model explained 26% of the variance in CVD risk perception. The result suggests when occupational health nurses are giving routine health examination in small companies, they can enhance CVD risk perception in blue-collar workers by providing essential information about CVD risk factors and personal counseling on the individual worker's CVD risk status.

Impact resistance and energies of intermetallic bonded diamond composites and polycrystalline diamond compacts and their comparison

NASA Astrophysics Data System (ADS)

Gorla, Sai Prasanth

Chemistry of intermetallic bonded diamond is studied. The impact resistance and energies of intermetallic bonded diamond is compared to current poly crystalline diamond compacts. IBD's are found to have high standards of hardness and have more impact energies absorbed. Intermetallic bonded diamond composite comprises of diamond particles dispersed in Tungsten carbide using Nickel aluminide (Ni3Al) as binder. In previous research conducted on IBD's, diamonds are successfully dispersed in intermetallic alloy of nickel aluminide and processed at 1350°C such that diamond particles remain intact without forming graphite. Composites are formed by milling, pressing the intermetallic binder and diamond particles and sintering at high temperature conditions.

Diamond tool machining of materials which react with diamond

DOEpatents

Lundin, R.L.; Stewart, D.D.; Evans, C.J.

1992-04-14

An apparatus is described for the diamond machining of materials which detrimentally react with diamond cutting tools in which the cutting tool and the workpiece are chilled to very low temperatures. This chilling halts or retards the chemical reaction between the workpiece and the diamond cutting tool so that wear rates of the diamond tool on previously detrimental materials are comparable with the diamond turning of materials which do not react with diamond. 1 figs.

Community cardiovascular disease risk from cross-sectional general practice clinical data: a spatial analysis.

PubMed

Bagheri, Nasser; Gilmour, Bridget; McRae, Ian; Konings, Paul; Dawda, Paresh; Del Fante, Peter; van Weel, Chris

2015-02-26

Cardiovascular disease (CVD) continues to be a leading cause of illness and death among adults worldwide. The objective of this study was to calculate a CVD risk score from general practice (GP) clinical records and assess spatial variations of CVD risk in communities. We used GP clinical data for 4,740 men and women aged 30 to 74 years with no history of CVD. A 10-year absolute CVD risk score was calculated based on the Framingham risk equation. The individual risk scores were aggregated within each Statistical Area Level One (SA1) to predict the level of CVD risk in that area. Finally, the pattern of CVD risk was visualized to highlight communities with high and low risk of CVD. The overall 10-year risk of CVD in our sample population was 14.6% (95% confidence interval [CI], 14.3%-14.9%). Of the 4,740 patients in our study, 26.7% were at high risk, 29.8% were at moderate risk, and 43.5% were at low risk for CVD over 10 years. The proportion of patients at high risk for CVD was significantly higher in the communities of low socioeconomic status. This study illustrates methods to further explore prevalence, location, and correlates of CVD to identify communities of high levels of unmet need for cardiovascular care and to enable geographic targeting of effective interventions for enhancing early and timely detection and management of CVD in those communities.

Chronic Inflammatory Diseases and Atherosclerotic Cardiovascular Disease: Innocent Bystanders or Partners in Crime?

PubMed

Hansen, Peter Riis

2018-01-01

Inflammation plays a significant role in atherosclerosis and cardiovascular disease (CVD). Patients with chronic inflammatory diseases are at increased risk of CVD, but it is debated whether this association is causal or dependent on shared risk factors, other exposures, genes, and/or inflammatory pathways. The current review summarizes epidemiological, clinical, and experimental data supporting the role of shared inflammatory mechanisms between atherosclerotic CVD and rheumatoid arthritis, psoriasis, inflammatory bowel disease, and periodontitis, respectively, and provides insights to future prospects in this area of research. Awareness of the role of inflammation in CVD in patients with chronic inflammatory diseases and the potential for anti-inflammatory therapy, e.g., with tumor necrosis factor-α inhibitors, to also reduce atherosclerotic CVD has evolved into guideline- based recommendations. These include regular CVD risk assessment, aggressive treatment of traditional CVD risk factors, and recognition of reduced CVD as an added benefit of strict inflammatory disease control. At present, chronic inflammatory diseases would appear to qualify as partners in crime and not merely innocent bystanders to CVD. However, definite incremental contributions of inflammation versus effects of the complex interplay with other CVD risk factors may never be fully elucidated and for the foreseeable future, inflammation is posed to maintain its current position as both a marker and a maker of CVD, with clinical utility both for identification of patient at risk of CVD and as target for therapy to reduce CVD. Copyright© Bentham Science Publishers; For any queries, please email at epub@benthamscience.org.

Cardiovascular risk estimation by professionally active cardiovascular nurses: results from the Basel 2005 Nurses Cohort.

PubMed

Scholte op Reimer, Wilma J M; Moons, Philip; De Geest, Sabina; Fridlund, Bengt; Heikkilä, Johanna; Jaarsma, Tiny; Lenzen, Mattie; Martensson, Jan; Norekvål, Tone M; Smith, Karen; Stewart, Simon; Strömberg, Anna; Thompson, David R

2006-12-01

Nurses play a key role in the prevention of cardiovascular disease (CVD) and one would, therefore, expect them to have a heightened awareness of the need for systematic screening and their own CVD risk profile. The aim of this study was to examine personal awareness of CVD risk among a cohort of cardiovascular nurses attending a European conference. Of the 340 delegates attending the 5th annual Spring Meeting on Cardiovascular Nursing (Basel, Switzerland, 2005), 287 (83%) completed a self-report questionnaire to assess their own risk factors for CVD. Delegates were also asked to give an estimation of their absolute total risk of experiencing a fatal CVD event in the next 10 years. Level of agreement between self-reported CVD risk estimation and their actual risk according to the SCORE risk assessment system was compared by calculating weighted Kappa (kappa(w)). Overall, 109 responders (38%) self-reported having either pre-existing CVD (only 2%), one or more markedly raised CVD risk factors, a high total risk of fatal CVD (> or =5% in 10 years) or a strong family history of CVD. About half of this cohort (53%) did not know their own total cholesterol level. Less than half (45%) reported having a 10-year risk of fatal CVD of <1%, while 13% reported having a risk > or =5%. Based on the SCORE risk function, the estimated 10-year risk of a fatal CVD event was <1% for 96% of responders: only 2% had a > or =5% risk of such an event. Overall, less than half (46%) of this cohort's self-reported CVD risk corresponded with that calculated using the SCORE risk function (kappa(w)=0.27). Most cardiovascular nurses attending a European conference in 2005 poorly understood their own CVD risk profile, and the agreement between their self-reported 10-year risk of a fatal CVD and their CVD risk using SCORE was only fair. Given the specialist nature of this conference, our findings clearly demonstrate a need to improve overall nursing awareness of the role and importance of systematic CVD risk assessment.

Development and optimization of carvedilol orodispersible tablets: enhancement of pharmacokinetic parameters in rabbits

PubMed Central

Aljimaee, Yazeed HM; El-Helw, Abdel-Rahim M; Ahmed, Osama AA; El-Say, Khalid M

2015-01-01

Background Carvedilol (CVD) is used for the treatment of essential hypertension, heart failure, and systolic dysfunction after myocardial infarction. Due to its lower aqueous solubility and extensive first-pass metabolism, the absolute bioavailability of CVD does not exceed 30%. To overcome these drawbacks, the objective of this work was to improve the solubility and onset of action of CVD through complexation with hydroxypropyl-β-cyclodextrin and formulation of the prepared complex as orodispersible tablets (ODTs). Methods Compatibility among CVD and all tablet excipients using differential scanning calorimetry and Fourier transform infrared spectroscopy, complexation of CVD with different polymers, and determination of the solubility of CVD in the prepared complexes were first determined. A Box-Behnken design (BBD) was used to study the effect of tablet formulation variables on the characteristics of the prepared tablets and to optimize preparation conditions. According to BBD design, 15 formulations of CVD-ODTs were prepared by direct compression and then evaluated for their quality attributes. The relative pharmacokinetic parameters of the optimized CVD-ODTs were compared with those of the marketed CVD tablet. A single dose, equivalent to 2.5 mg/kg CVD, was administered orally to New Zealand white rabbits using a double-blind, randomized, crossover design. Results The solubility of CVD was improved from 7.32 to 22.92 mg/mL after complexation with hydroxypropyl-β-cyclodextrin at a molar ratio of 1:2 (CVD to cyclodextrin). The formulated CVD-ODTs showed satisfactory results concerning tablet hardness (5.35 kg/cm2), disintegration time (18 seconds), and maximum amount of CVD released (99.72%). The pharmacokinetic data for the optimized CVD-ODT showed a significant (P<0.05) increase in maximum plasma concentration from 363.667 to 496.4 ng/mL, and a shortening of the time taken to reach maximum plasma concentration to 2 hours in comparison with the marketed tablet. Conclusion The optimized CVD-ODTs showed improved oral absorption of CVD and a subsequent acceleration of clinical effect, which is favored for hypertensive and cardiac patients. PMID:25834396

Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

DOEpatents

Gruen, Dieter M.

2012-09-04

One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

Self-composite comprised of nanocrystalline diamond and a non-diamond component useful for thermoelectric applications

DOEpatents

Gruen, Dieter M [Downers Grove, IL

2009-08-11

One provides nanocrystalline diamond material that comprises a plurality of substantially ordered diamond crystallites that are sized no larger than about 10 nanometers. One then disposes a non-diamond component within the nanocrystalline diamond material. By one approach this non-diamond component comprises an electrical conductor that is formed at the grain boundaries that separate the diamond crystallites from one another. The resultant nanowire is then able to exhibit a desired increase with respect to its ability to conduct electricity while also preserving the thermal conductivity behavior of the nanocrystalline diamond material.

Modeling, Simulation, and Analysis of Quantum Transport.

DTIC Science & Technology

1991-03-15

mode operation is important to prevent standby power dissipation in circuits. The relevant struc- ture consists of a quantum well one half of which...is intentionally doped while the other half is left undoped. In the absence of any external electric field, electrons mostly reside in the doped half ...electron wavefunction to the undoped half in which the mobility is much higher because of the absence of in-situ impurity scatterir". Consequently the

Multilayered composite proton exchange membrane and a process for manufacturing the same

DOEpatents

Santurri, Pasco R; Duvall, James H; Katona, Denise M; Mausar, Joseph T; Decker, Berryinne

2015-05-05

A multilayered membrane for use with fuel cells and related applications. The multilayered membrane includes a carrier film, at least one layer of an undoped conductive polymer electrolyte material applied onto the carrier film, and at least one layer of a conductive polymer electrolyte material applied onto the adjacent layer of polymer electrolyte material. Each layer of conductive polymer electrolyte material is doped with a plurality of nanoparticles. Each layer of undoped electrolyte material and doped electrolyte material may be applied in an alternating configuration, or alternatively, adjacent layers of doped conductive polymer electrolyte material is employed. The process for producing a multilayered composite membrane includes providing a carrier substrate and solution casting a layer of undoped conductive polymer electrolyte material and a layer of conductive polymer electrolyte material doped with nanoparticles in an alternating arrangement or in an arrangement where doped layers are adjacent to one another.

Laser rods with undoped, flanged end-caps for end-pumped laser applications

DOEpatents

Meissner, Helmuth E.; Beach, Raymond J.; Bibeau, Camille; Sutton, Steven B.; Mitchell, Scott; Bass, Isaac; Honea, Eric

1999-01-01

A method and apparatus for achieving improved performance in a solid state laser is provided. A flanged, at least partially undoped end-cap is attached to at least one end of a laserable medium. Preferably flanged, undoped end-caps are attached to both ends of the laserable medium. Due to the low scatter requirements for the interface between the end-caps and the laser rod, a non-adhesive method of bonding is utilized such as optical contacting combined with a subsequent heat treatment of the optically contacted composite. The non-bonded end surfaces of the flanged end-caps are coated with laser cavity coatings appropriate for the lasing wavelength of the laser rod. A cooling jacket, sealably coupled to the flanged end-caps, surrounds the entire length of the laserable medium. Radiation from a pump source is focussed by a lens duct and passed through at least one flanged end-cap into the laser rod.

Flux pinning in nanoparticle doped MgB 2/Cu tapes

NASA Astrophysics Data System (ADS)

Babić, E.; Kušević, I.; Husnjak, O.; Soltanian, S.; Wang, X. L.; Dou, S. X.

2007-09-01

The irreversibility fields Birr and critical current densities Jc of undoped and Si and SiC nanoparticle doped (5, 10 and 20 wt%) MgB2 tapes were measured in the temperature (T) range 2-38 K and in magnetic fields B ⩽ 16 T. Whereas Birr of undoped tapes varies smoothly with T, those of doped tapes show a change in slope around a crossover field Bcr which increases with nanoparticle content and also depends on their type. This indicates matching effect in vortex pinning, probably associated with Mg2Si nanoprecipitates formed during heat treatment. Indeed, Birr of doped tapes was enhanced in respect to that of undoped one with the highest enhancement for Birr ≈ Bcr, but the enhancement remained high ≈1.4 even for Birr ≫ Bcr (low temperatures). The variations of Jc and the pinning force density Fp = JcB with B and T support the above findings.

Strong Flux Pinning of Nano-Sized Ysz Particles in Ybco Films Prepared by Mod Method

NASA Astrophysics Data System (ADS)

Ye, S.; Suo, H. L.; Liu, M.; Tang, X.; Wu, Z. P.; Zhao, Y.; Zhou, M. L.

The YBCO films with doped YSZ nanoparticles have been prepared successfully by metal organic doepositon method using trifluoroacetates (TFA-MOD) through dissolving Zr organic salt into the YBCO precursor solution. The doped films have well in-plane and out-plane textures detected by both XRD Φ-scan and ω-scan. The YSZ nanoparticles with the size of about 5 ~ 15 nm were observed on the surface of the YBCO films using both FE-SEM and TEM. By comparing the superconducting properties, it was found that the doped YBCO films had lower Tc than that of undoped YBCO films. However, as increasing the applied magnetic field, Jc of the doped YBCO films were much better than that of undoped one. The Jc was as higher as 2.5 times than that of undoped YBCO film at 77 K and 1 T applied field.

Defect characterization and magnetic properties in un-doped ZnO thin film annealed in a strong magnetic field

NASA Astrophysics Data System (ADS)

Ning, Shuai; Zhan, Peng; Wang, Wei-Peng; Li, Zheng-Cao; Zhang, Zheng-Jun

2014-12-01

Highly c-axis oriented un-doped zinc oxide (ZnO) thin films, each with a thickness of ~ 100 nm, are deposited on Si (001) substrates by pulsed electron beam deposition at a temperature of ~ 320 °C, followed by annealing at 650 °C in argon in a strong magnetic field. X-ray photoelectron spectroscopy (XPS), positron annihilation analysis (PAS), and electron paramagnetic resonance (EPR) characterizations suggest that the major defects generated in these ZnO films are oxygen vacancies. Photoluminescence (PL) and magnetic property measurements indicate that the room-temperature ferromagnetism in the un-doped ZnO film originates from the singly ionized oxygen vacancies whose number depends on the strength of the magnetic field applied in the thermal annealing process. The effects of the magnetic field on the defect generation in the ZnO films are also discussed.

Two and four photon absorption and nonlinear refraction in undoped, chromium doped and copper doped ZnS quantum dots

NASA Astrophysics Data System (ADS)

Sharma, Dimple; Malik, B. P.; Gaur, Arun

2015-12-01

The ZnS quantum dots (QDs) with Cr and Cu doping were synthesized by chemical co-precipitation method. The nanostructures of the prepared undoped and doped ZnS QDs were characterized by UV-vis spectroscopy, Transmission electron microscopy (TEM) and X-ray diffraction (XRD). The sizes of QDs were found to be within 3-5 nm range. The nonlinear parameters viz. Two photon absorption coefficient (β2), nonlinear refractive index (n2), third order nonlinear susceptibility (χ3) at wavelength 532 nm and Four photon absorption coefficient (β4) at wavelength 1064 nm have been calculated by Z-scan technique using nanosecond Nd:YAG laser in undoped, Cr doped and Cu doped ZnS QDs. Higher values of nonlinear parameters for doped ZnS infer that they are potential material for the development of photonics devices and sensor protection applications.

Cardiovascular disease incidence in adolescent and young adult cancer survivors: a retrospective cohort study.

PubMed

Keegan, Theresa H M; Kushi, Lawrence H; Li, Qian; Brunson, Ann; Chawla, X; Chew, Helen K; Malogolowkin, Marcio; Wun, Ted

2018-06-01

Few population-based studies have focused on cardiovascular disease (CVD) risk in adolescent and young adult (AYA; 15-39 years) cancer survivors and none have considered whether CVD risk differs by sociodemographic factors. Analyses focused on 79,176 AYA patients diagnosed with 14 first primary cancers in 1996-2012 and surviving > 2 years after diagnosis with follow-up through 2014. Data were obtained from the California Cancer Registry and State hospital discharge data. CVD included coronary artery disease, heart failure, and stroke. The cumulative incidence of developing CVD accounted for the competing risk of death. Multivariable Cox proportional hazards regression evaluated factors associated with CVD and the impact of CVD on mortality. Overall, 2249 (2.8%) patients developed CVD. Survivors of central nervous system cancer (7.3%), acute lymphoid leukemia (6.9%), acute myeloid leukemia (6.8%), and non-Hodgkin lymphoma (4.1%) had the highest 10-year CVD incidence. In multivariable models, African-Americans (hazard ratio (HR) = 1.55, 95% confidence interval (CI) = 1.33-1.81; versus non-Hispanic Whites), those with public/no health insurance (HR = 1.78, 95% CI = 1.61-1.96; versus private) and those who resided in lower socioeconomic status neighborhoods had a higher CVD risk. These sociodemographic differences in CVD incidence were apparent across most cancer sites. The risk of death was increased by eightfold or higher among AYAs who developed CVD. While cancer therapies are known to increase the risk of CVD, this study additionally shows that CVD risk varies by sociodemographic factors. The identification and mitigation of CVD risk factors in these subgroups may improve long-term patient outcomes.

Dietary Choline and Betaine and Risk of CVD: A Systematic Review and Meta-Analysis of Prospective Studies

PubMed Central

Meyer, Katie A.; Shea, Jonathan W.

2017-01-01

Studies implicate choline and betaine metabolite trimethylamine N-oxide (TMAO) in cardiovascular disease (CVD). We conducted a systematic review and random-effects meta-analysis to quantify a summary estimated effect of dietary choline and betaine on hard CVD outcomes (incidence and mortality). Eligible studies were prospective studies in adults with comprehensive diet assessment and follow-up for hard CVD endpoints. We identified six studies that met our criteria, comprising 18,076 incident CVD events, 5343 CVD deaths, and 184,010 total participants. In random effects meta-analysis, incident CVD was not associated with choline (relative risk (RR): 1.00; 95% CI: 0.98, 1.02) or betaine (RR: 0.99; 95% CI: 0.98, 1.01) intake. Results did not vary by study outcome (incident coronary heart disease, stroke, total CVD) and there was no evidence for heterogeneity among studies. Only two studies provided data on phosphatidylcholine and CVD mortality. Random effects meta-analysis did not support an association between choline and CVD mortality (RR: 1.09, 95% CI: 0.89, 1.35), but one study supported a positive association and there was significant heterogeneity (I2 = 84%, p-value < 0.001). Our findings do not support an association between dietary choline/betaine with incident CVD, but call for further research into choline and CVD mortality. PMID:28686188

Dietary Choline and Betaine and Risk of CVD: A Systematic Review and Meta-Analysis of Prospective Studies.

PubMed

Meyer, Katie A; Shea, Jonathan W

2017-07-07

Studies implicate choline and betaine metabolite trimethylamine N-oxide (TMAO) in cardiovascular disease (CVD). We conducted a systematic review and random-effects meta-analysis to quantify a summary estimated effect of dietary choline and betaine on hard CVD outcomes (incidence and mortality). Eligible studies were prospective studies in adults with comprehensive diet assessment and follow-up for hard CVD endpoints. We identified six studies that met our criteria, comprising 18,076 incident CVD events, 5343 CVD deaths, and 184,010 total participants. In random effects meta-analysis, incident CVD was not associated with choline (relative risk (RR): 1.00; 95% CI: 0.98, 1.02) or betaine (RR: 0.99; 95% CI: 0.98, 1.01) intake. Results did not vary by study outcome (incident coronary heart disease, stroke, total CVD) and there was no evidence for heterogeneity among studies. Only two studies provided data on phosphatidylcholine and CVD mortality. Random effects meta-analysis did not support an association between choline and CVD mortality (RR: 1.09, 95% CI: 0.89, 1.35), but one study supported a positive association and there was significant heterogeneity ( I ² = 84%, p -value < 0.001). Our findings do not support an association between dietary choline/betaine with incident CVD, but call for further research into choline and CVD mortality.

n-Type diamond and method for producing same

DOEpatents

Anderson, Richard J.

2002-01-01

A new n-type semiconducting diamond is disclosed, which is doped with n-type dopant atoms. Such diamond is advantageously formed by chemical vapor deposition from a source gas mixture comprising a carbon source compound for the diamond, and a volatile hot wire filament for the n-type impurity species, so that the n-type impurity atoms are doped in the diamond during its formation. A corresponding chemical vapor deposition method of forming the n-type semiconducting diamond is disclosed. The n-type semiconducting diamond of the invention may be usefully employed in the formation of diamond-based transistor devices comprising pn diamond junctions, and in other microelectronic device applications.

Racial and Ethnic Disparities in Cardiovascular Disease: An Assessment of Obstetrician-Gynecologists' Knowledge, Attitudes, and Practice Patterns.

PubMed

Jones, Katherine M; Carter, Michele M; Schulkin, Jay

2015-06-01

African American and Hispanic women are disproportionately affected by cardiovascular disease (CVD) and its many risk factors. Obstetrician-gynecologists (OB/GYNs) play an integral role in well-woman care and have a unique opportunity to provide CVD counseling and screening to these at-risk and underserved groups. To assess whether OB/GYN race/ethnicity and OB/GYN practices with increasing minority patient populations predicted differences in OB/GYNs' knowledge, attitudes, and practice patterns relevant to racial/ethnic disparities in CVD. This study also sought to determine provider and patient-related barriers to CVD care. A questionnaire on CVD was mailed to 273 members of The American College of Obstetricians and Gynecologists in March-July 2013. African American and Hispanic OB/GYNs and OB/GYN practices with increasing minority patient populations were more knowledgeable of CVD disparities. These OB/GYNs reported greater concern for minority women's CVD risk relative to White OB/GYNs. Overall, OB/GYNs appear less knowledgeable and concerned with Hispanics' increased CVD risk relative to African Americans'. The most commonly reported provider and patient-related barriers to CVD care were time constraints, patient nonadherence to treatment recommendations, and inadequate training. It is likely that minority OB/GYNs and those with practices with increasing minority patient populations have greater exposure to women at risk for CVD. Dissemination of educational information regarding Hispanic women's CVD risk profile may improve OB/GYN knowledge, counseling, and screening. Increased training in CVD and multicultural competency during medical school and residency should help OB/GYNs overcome what they report as primary barriers to CVD care.

High-density fluids and the growth of monocrystalline diamonds

NASA Astrophysics Data System (ADS)

Weiss, Y.; Kiflawi, I.; Davies, N.; Navon, O.

2014-09-01

The chemical nature and composition of the growth medium of monocrystalline (MC) diamonds is still a matter of debate, partially because carbonate-bearing high-density fluids (HDFs) that are common in fibrous diamonds have not been found in MC diamonds. Here we report the first finding of HDF microinclusions in a MC octahedral diamond from Finsch, South Africa and in the MC octahedral core of a coated diamond from Kankan, Guinea; both diamonds carry nitrogen in B-centers. Numerous microinclusions in diamond Finsch_2a_cap1 are restricted to two thin layers parallel to the (1 1 1) face, ∼20 and 200 μm from the diamond rim. Low-Mg carbonatitic HDFs are found along the inner layer while the outer layer trapped saline compositions. The major and trace element compositions of the inclusions and their infrared spectra are highly similar to those of microinclusions found in fibrous diamonds. A few isolated microinclusions of saline compositions are scattered around a sulfide inclusion in the center of the octahedral core of diamond ON-KAN-383. This evidence for the involvement of oxidized fluids in the formation of MC diamonds adds to previous reports on the antiquity of HDFs in fibrous diamonds, the presence of carbonate and halide phases in inclusions in MC diamonds and the similarity of trace element pattern of a MC diamond to those of low-Mg carbonatitic HDF in fibrous diamonds. In addition, we show that the interaction of HDFs with depleted garnets can produce sinusoidal REE patterns which are one of the primary features of lherzolitic and harzburgitic garnet inclusions in MC diamonds. Together, these observations suggest that HDFs are involved in the formation of many types of diamonds from the Archaean to the Phanerozoic. HDFs are trapped in large quantities during rapid, fibrous growth, but must also be present during the growth of many MC diamonds.

A new phase transformation path from nanodiamond to new-diamond via an intermediate carbon onion

NASA Astrophysics Data System (ADS)

Xiao, J.; Li, J. L.; Liu, P.; Yang, G. W.

2014-11-01

The investigation of carbon allotropes such as graphite, diamond, fullerenes, nanotubes and carbon onions and mechanisms that underlie their mutual phase transformation is a long-standing problem of great fundamental importance. New diamond (n-diamond) is a novel metastable phase of carbon with a face-centered cubic structure; it is called ``new diamond'' because many reflections in its electron diffraction pattern are similar to those of diamond. However, producing n-diamond from raw carbon materials has so far been challenging due to n-diamond's higher formation energy than that of diamond. Here, we, for the first time, demonstrate a new phase transformation path from nanodiamond to n-diamond via an intermediate carbon onion in the unique process of laser ablation in water, and establish that water plays a crucial role in the formation of n-diamond. When a laser irradiates colloidal suspensions of nanodiamonds at ambient pressure and room temperature, nanodiamonds are first transformed into carbon onions serving as an intermediate phase, and sequentially carbon onions are transformed into n-diamonds driven by the laser-induced high temperature and high pressure from the carbon onion as a nanoscaled temperature and pressure cell upon the process of laser irradiation in a liquid. This phase transformation not only provides new insight into the physical mechanism involved, but also offers one suitable opportunity for breaking controllable pathways between n-diamond and carbon allotropes such as diamond and carbon onions.The investigation of carbon allotropes such as graphite, diamond, fullerenes, nanotubes and carbon onions and mechanisms that underlie their mutual phase transformation is a long-standing problem of great fundamental importance. New diamond (n-diamond) is a novel metastable phase of carbon with a face-centered cubic structure; it is called ``new diamond'' because many reflections in its electron diffraction pattern are similar to those of diamond. However, producing n-diamond from raw carbon materials has so far been challenging due to n-diamond's higher formation energy than that of diamond. Here, we, for the first time, demonstrate a new phase transformation path from nanodiamond to n-diamond via an intermediate carbon onion in the unique process of laser ablation in water, and establish that water plays a crucial role in the formation of n-diamond. When a laser irradiates colloidal suspensions of nanodiamonds at ambient pressure and room temperature, nanodiamonds are first transformed into carbon onions serving as an intermediate phase, and sequentially carbon onions are transformed into n-diamonds driven by the laser-induced high temperature and high pressure from the carbon onion as a nanoscaled temperature and pressure cell upon the process of laser irradiation in a liquid. This phase transformation not only provides new insight into the physical mechanism involved, but also offers one suitable opportunity for breaking controllable pathways between n-diamond and carbon allotropes such as diamond and carbon onions. Electronic supplementary information (ESI) available. See DOI: 10.1039/c4nr05246c

31 CFR 592.310 - Rough diamond.

Code of Federal Regulations, 2014 CFR

2014-07-01

... 31 Money and Finance:Treasury 3 2014-07-01 2014-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn, cleaved...

31 CFR 592.310 - Rough diamond.

Code of Federal Regulations, 2012 CFR

2012-07-01

... 31 Money and Finance:Treasury 3 2012-07-01 2012-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn, cleaved...

31 CFR 592.310 - Rough diamond.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 31 Money and Finance: Treasury 3 2010-07-01 2010-07-01 false Rough diamond. 592.310 Section 592... FOREIGN ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn...

31 CFR 592.310 - Rough diamond.

Code of Federal Regulations, 2013 CFR

2013-07-01

... 31 Money and Finance:Treasury 3 2013-07-01 2013-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn, cleaved...

31 CFR 592.310 - Rough diamond.

Code of Federal Regulations, 2011 CFR

2011-07-01

... 31 Money and Finance:Treasury 3 2011-07-01 2011-07-01 false Rough diamond. 592.310 Section 592.310... ASSETS CONTROL, DEPARTMENT OF THE TREASURY ROUGH DIAMONDS CONTROL REGULATIONS General Definitions § 592.310 Rough diamond. The term rough diamond means any diamond that is unworked or simply sawn, cleaved...

The effect of carbon on the microstructures, mechanical properties, and deformation mechanisms of thermo-mechanically treated Fe 40.4Ni 11.3Mn 34.8Al 7.5Cr 6 high entropy alloys

DOE PAGES

Wang, Zhangwei; Baker, Ian; Guo, Wei; ...

2017-03-01

We investigated the effects of cold rolling followed by annealing on the mechanical properties and dislocation substructure evolution of undoped and 1.1 at. % carbon-doped Fe 40.4Ni 11.3Mn 34.8Al 7.5Cr 6 high entropy alloys (HEAs). X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscopy (TEM) and atom probe tomography (APT) were employed to characterize the microstructures. The as-cast HEAs were coarse-grained and single phase f.c.c., whereas the thermo-mechanical treatment caused recrystallization (to fine grain sizes) and precipitation (a B2 phase for the undoped HEA; and a B2 phase, and M 23C 6 and M 7C 3 carbides for the C-dopedmore » HEA). Carbon, which was found to have segregated to the grain boundaries using APT, retarded recrystallization. The reduction in grain size resulted in a sharp increase in strength, while the precipitation, which produced only a small increase in strength, probably accounted for the small decrease in ductility for both undoped and C-doped HEAs. For both undoped and C-doped HEAs, the smaller grain-sized material initially exhibited higher strain hardening than the coarse-grained material but showed a much lower strain hardening at large tensile strains. Wavy slip in the undoped HEAs and planar slip in C-doped HEAs were found at the early stages of deformation irrespective of grain size. At higher strains, dislocation cell structures formed in the 19 μm grain-sized undoped HEA, while microbands formed in the 23 μm grain-sized C-doped HEA. Conversely, localized dislocation clusters were found in both HEAs at the finest grain sizes (5 μm). The inhibition of grain subdivision by the grain boundaries and precipitates lead to the transformation from regular dislocation configurations consisting of dislocation-cells and microbands to irregular dislocation configurations consisting of localized dislocation clusters, which further account for the decrease in ductility. Our investigation of the formation mechanism and strain hardening of dislocation cells and microbands could benefit future structural material design.« less

Zn-dopant dependent defect evolution in GaN nanowires.

PubMed

Yang, Bing; Liu, Baodan; Wang, Yujia; Zhuang, Hao; Liu, Qingyun; Yuan, Fang; Jiang, Xin

2015-10-21

Zn doped GaN nanowires with different doping levels (0, <1 at%, and 3-5 at%) have been synthesized through a chemical vapor deposition (CVD) process. The effect of Zn doping on the defect evolution, including stacking fault, dislocation, twin boundary and phase boundary, has been systematically investigated by transmission electron microscopy and first-principles calculations. Undoped GaN nanowires show a hexagonal wurtzite (WZ) structure with good crystallinity. Several kinds of twin boundaries, including (101¯3), (101¯1) and (202¯1), as well as Type I stacking faults (…ABABCBCB…), are observed in the nanowires. The increasing Zn doping level (<1 at%) induces the formation of screw dislocations featuring a predominant screw component along the radial direction of the GaN nanowires. At high Zn doping level (3-5 at%), meta-stable cubic zinc blende (ZB) domains are generated in the WZ GaN nanowires. The WZ/ZB phase boundary (…ABABACBA…) can be identified as Type II stacking faults. The density of stacking faults (both Type I and Type II) increases with increasing the Zn doping levels, which in turn leads to a rough-surface morphology in the GaN nanowires. First-principles calculations reveal that Zn doping will reduce the formation energy of both Type I and Type II stacking faults, favoring their nucleation in GaN nanowires. An understanding of the effect of Zn doping on the defect evolution provides an important method to control the microstructure and the electrical properties of p-type GaN nanowires.

A Rapid Deposition of Fluorine Doped Zinc Oxide Using the Atmospheric Pressure Chemical Vapour Deposition Method

NASA Astrophysics Data System (ADS)

Najafi, Navid; Rozati, S. M.

2018-03-01

Fluorine-doped zinc oxide (FZO) (ZnO:F) thin films were manufactured by atmospheric pressure chemical vapor deposition (APCVD) on glass substrates using zinc acetate dihydrate [C4H6O4Zn·2H2O, ZnAc] and ammonium fluoride (NH4F) as the source of fluorine with deposition duration of only 120 s for each sample. The effects of different amounts of fluorine as the dopant on the structural, electrical and optical properties of FZO thin films were investigated. The results show a polycrystalline structure at higher temperatures compared to amorphous structure at lower temperatures. The x-ray diffraction patterns of the polycrystalline films were identified as a hexagonal wurtzite structure of zinc oxide (ZnO) with the (002) preferred orientation. Also, the sheet resistance decreased from 17.8 MΩ/□ to 28.9 KΩ/□ for temperatures 325°C to 450°C, respectively. In order to further decrease the sheet resistance of the undoped ZnO thin films, fluorine was added using NH4F as the precursor, and again a drastic change in sheet resistance of only 17.7 Ω/□ was obtained. Based on the field emission scanning electron microscopy images, the fluorine concentration in CVD source is an important factor affecting the grain size and modifies electrical parameters. Ultraviolet-visible measurements revealed reduction of transparency of the layers with increasing fluorine as the dopant.

EULAR task force recommendations on annual cardiovascular risk assessment for patients with rheumatoid arthritis: an audit of the success of implementation in a rheumatology outpatient clinic.

PubMed

Ikdahl, Eirik; Rollefstad, Silvia; Olsen, Inge C; Kvien, Tore K; Hansen, Inger Johanne Widding; Soldal, Dag Magnar; Haugeberg, Glenn; Semb, Anne Grete

2015-01-01

EULAR recommendations for cardiovascular disease (CVD) risk management include annual CVD risk assessments for patients with rheumatoid arthritis (RA). We evaluated the recording of CVD risk factors (CVD-RF) in a rheumatology outpatient clinic, where EULAR recommendations had been implemented. Further, we compared CVD-RF recordings between a regular rheumatology outpatient clinic (RegROC) and a structured arthritis clinic (AC). In 2012, 1142 RA patients visited the rheumatology outpatient clinic: 612 attended RegROC and 530 attended AC. We conducted a search in the patient journals to ascertain the rate of CVD-RF recording. The overall CVD-RF recording rate was 40.1% in the rheumatology outpatient clinic, reflecting a recording rate of 59.1% in the AC and 23.6% in the RegROC. The odds ratios for having CVD-RFs recorded for patients attending AC compared to RegROC were as follows: blood pressure: 12.4, lipids: 5.0-6.0, glucose: 9.1, HbA1c: 6.1, smoking: 1.4, and for having all the CVD-RFs needed to calculate the CVD risk by the systematic coronary risk evaluation (SCORE): 21.0. The CVD-RF recording rate was low in a rheumatology outpatient clinic. However, a systematic team-based model was superior compared to a RegROC. Further measures are warranted to improve CVD-RF recording in RA patients.

Suicide in males and females with cardiovascular disease and comorbid depression.

PubMed

Hawkins, Michael; Schaffer, Ayal; Reis, Catherine; Sinyor, Mark; Herrmann, Nathan; Lanctôt, Krista L

2016-06-01

Myocardial infarction (MI) has been associated with an increased risk of suicide, further increased among individuals with a comorbid psychiatric illness. A paucity of studies have examined details of suicide among individuals with cardiovascular disease (CVD) and comorbid depression. We aimed to compare demographic, clinical and suicide-specific characteristics between suicide victims with CVD with depression (CVD+D) and without comorbid depression (CVD-D). Coroner data on suicide decedents with CVD (n=413) occurring in Toronto, Canada from 1998 to 2012 were collected. Characteristics were compared between the CVD+D and CVD-D groups. Regression analysis examined for gender differences in these groups. CVD+D subjects compared to CVD-D were more likely to have had a past suicide attempt (p=0.008), and to have experienced a bereavement (p=0.008) or financial stressor (p=0.005) in the past year. Each of these variables remained significantly associated with the presence of depression after the regression analysis. Within the CVD+D group, females were more likely to die from suicide by self-poisoning (p<0.0001) and males by shooting (p=0.001). Psychological autopsies were not available. The definition of CVD was broad and the accuracy of its diagnosis could not be confirmed. Individuals with CVD+D who died from suicide had significant differences in clinical characteristics and specific stressors compared to those without depression. These data may help to better characterize suicide risk and prevention in this vulnerable population. Copyright © 2016 Elsevier B.V. All rights reserved.

Microstructure and thermal properties of copper–diamond composites with tungsten carbide coating on diamond particles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kang, Qiping; He, Xinbo, E-mail: xb_he@163.com; Ren, Shubin

2015-07-15

An effective method for preparing tungsten carbide coating on diamond surfaces was proposed to improve the interface bonding between diamond and copper. The WC coating was formed on the diamond surfaces with a reaction medium of WO{sub 3} in mixed molten NaCl–KCl salts and the copper–diamond composites were obtained by vacuum pressure infiltration of WC-coated diamond particles with pure copper. The microstructure of interface bonding between diamond and copper was discussed. Thermal conductivity and thermal expansion behavior of the obtained copper–diamond composites were investigated. Results indicated that the thermal conductivity of as-fabricated composite reached 658 W m{sup −} {sup 1}more » K{sup −} {sup 1}. Significant reduction in coefficient of thermal expansion of the composite compared with that of pure copper was obtained. - Highlights: • WC coating was successfully synthesized on diamond particles in molten salts. • WC coating obviously promoted the wettability of diamond and copper matrix. • WC coating greatly enhanced the thermal conductivity of Cu–diamond composite. • The composites are suitable candidates for heat sink applications.« less

Method of enhancing the electronic properties of an undoped and/or N-type hydrogenated amorphous silicon film

DOEpatents

Carlson, David E.

1980-01-01

The dark conductivity and photoconductivity of an N-type and/or undoped hydrogenated amorphous silicon layer fabricated by an AC or DC proximity glow discharge in silane can be increased through the incorporation of argon in an amount from 10 to about 90 percent by volume of the glow discharge atmosphere which contains a silicon-hydrogen containing compound in an amount of from about 90 to about 10 volume percent.

Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH)

DTIC Science & Technology

2013-09-01

Optimization of the Nonradiative Lifetime of Molecular- Beam-Epitaxy (MBE)-Grown Undoped GaAs/AlGaAs Double Heterostructures (DH) by P...it to the originator. Army Research Laboratory Adelphi, MD 20783-1197 ARL-TR-6660 September 2013 Optimization of the Nonradiative ...REPORT TYPE Final 3. DATES COVERED (From - To) FY2013 4. TITLE AND SUBTITLE Optimization of the Nonradiative Lifetime of Molecular-Beam-Epitaxy

Laser generation in polycrystalline Cr{sup 2+}:ZnSe with undoped faces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Savin, D V; Gavrishchuk, E M; Ikonnikov, V B

2015-01-31

An original method has been suggested for producing polycrystalline Cr{sup 2+}:ZnSe samples with undoped faces. Generation characteristics of a Cr{sup 2+}:ZnSe laser are studied under pulse-periodic pumping by a Tm{sup 3+}:YLF-laser. The efficiency of converting the pump radiation into laser generation at a wavelength of 2350 nm is 20%. Cr{sup 2+}:ZnSe samples exhibit high resistance to surface breakdown. (lasers)

Oxygen vacancy-induced ferromagnetism in un-doped ZnO thin films

NASA Astrophysics Data System (ADS)

Zhan, Peng; Wang, Weipeng; Liu, Can; Hu, Yang; Li, Zhengcao; Zhang, Zhengjun; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2012-02-01

ZnO films became ferromagnetic when defects were introduced by thermal-annealing in flowing argon. This ferromagnetism, as shown by the photoluminescence measurement and positron annihilation analysis, was induced by the singly occupied oxygen vacancy with a saturated magnetization dependent positively on the amount of this vacancy. This study clarified the origin of the ferromagnetism of un-doped ZnO thin films and provides possibly an alternative way to prepare ferromagnetic ZnO films.

Gamma ray interaction with vanadyl ions in barium metaphosphate glasses; spectroscopic and ESR studies

NASA Astrophysics Data System (ADS)

Abdelghany, A. M.; ElBatal, H. A.; EzzElDin, F. M.

2017-11-01

Optical, FTIR, ESR investigations of prepared undoped barium metaphosphate glass and other samples with the same basic composition containing varying V2O5 contents (0.5, 1, 2, 3%) were carried out before and after gamma irradiation. The undoped glass shows a strong UV optical absorption which is correlated with unavoidable contaminated trace iron impurities. The V2O5-doped samples reveal two additional strong broad visible bands centered at 450 and 680 nm. Such extra peculiar and strong two broad visible bands are related to both tetravalent and trivalent vanadium ions in measurable percent due to the reducing behavior of barium phosphate host glass. Gamma irradiation on the undoped glass results in the generation of collective induced UV and visible bands which are originating from positive hole and electron centers. Glasses containing V2O5 reveal upon gamma irradiation induced defects in the UV as the undoped sample together with distinct splitting within the first broad visible band while the second broad band remains unchanged. This behavior is related to limited photoionization upon the addition of V2O5 indicating specific shielding effect of the vanadium ions towards gamma irradiation. It was noticed that irradiation causes no distinct variations in the FTIR spectra due to the presence of 50% of heavy metal oxide (BaO) and some shielding effect of vanadium ions.

Carrier Injection and Transport in Blue Phosphorescent Organic Light-Emitting Device with Oxadiazole Host

PubMed Central

Chiu, Tien-Lung; Lee, Pei-Yu

2012-01-01

In this paper, we investigate the carrier injection and transport characteristics in iridium(III)bis[4,6-(di-fluorophenyl)-pyridinato-N,C2′]picolinate (FIrpic) doped phosphorescent organic light-emitting devices (OLEDs) with oxadiazole (OXD) as the bipolar host material of the emitting layer (EML). When doping Firpic inside the OXD, the driving voltage of OLEDs greatly decreases because FIrpic dopants facilitate electron injection and electron transport from the electron-transporting layer (ETL) into the EML. With increasing dopant concentration, the recombination zone shifts toward the anode side, analyzed with electroluminescence (EL) spectra. Besides, EL redshifts were also observed with increasing driving voltage, which means the electron mobility is more sensitive to the electric field than the hole mobility. To further investigate carrier injection and transport characteristics, FIrpic was intentionally undoped at different positions inside the EML. When FIrpic was undoped close to the ETL, driving voltage increased significantly which proves the dopant-assisted-electron-injection characteristic in this OLED. When the undoped layer is near the electron blocking layer, the driving voltage is only slightly increased, but the current efficiency is greatly reduced because the main recombination zone was undoped. However, non-negligible FIrpic emission is still observed which means the recombination zone penetrates inside the EML due to certain hole-transporting characteristics of the OXD. PMID:22837713

Mg-doped ZnO nanoparticles for efficient sunlight-driven photocatalysis.

PubMed

Etacheri, Vinodkumar; Roshan, Roshith; Kumar, Vishwanathan

2012-05-01

Magnesium-doped ZnO (ZMO) nanoparticles were synthesized through an oxalate coprecipitation method. Crystallization of ZMO upon thermal decomposition of the oxalate precursors was investigated using differential scanning calorimetry (DSC) and X-ray diffraction (XRD) techniques. XRD studies point toward a significant c-axis compression and reduced crystallite sizes for ZMO samples in contrast to undoped ZnO, which was further confirmed by HRSEM studies. X-ray photoelectron spectroscopy (XPS), UV/vis spectroscopy and photoluminescence (PL) spectroscopy were employed to establish the electronic and optical properties of these nanoparticles. (XPS) studies confirmed the substitution of Zn(2+) by Mg(2+), crystallization of MgO secondary phase, and increased Zn-O bond strengths in Mg-doped ZnO samples. Textural properties of these ZMO samples obtained at various calcination temperatures were superior in comparison to the undoped ZnO. In addition to this, ZMO samples exhibited a blue-shift in the near band edge photoluminescence (PL) emission, decrease of PL intensities and superior sunlight-induced photocatalytic decomposition of methylene blue in contrast to undoped ZnO. The most active photocatalyst 0.1-MgZnO obtained after calcination at 600 °C showed a 2-fold increase in photocatalytic activity compared to the undoped ZnO. Band gap widening, superior textural properties and efficient electron-hole separation were identified as the factors responsible for the enhanced sunlight-driven photocatalytic activities of Mg-doped ZnO nanoparticles.

Enhancement of Perovskite Solar Cells Efficiency using N-Doped TiO2 Nanorod Arrays as Electron Transfer Layer.

PubMed

Zhang, Zhen-Long; Li, Jun-Feng; Wang, Xiao-Li; Qin, Jian-Qiang; Shi, Wen-Jia; Liu, Yue-Feng; Gao, Hui-Ping; Mao, Yan-Li

2017-12-01

In this paper, N-doped TiO 2 (N-TiO 2 ) nanorod arrays were synthesized with hydrothermal method, and perovskite solar cells were fabricated using them as electron transfer layer. The solar cell performance was optimized by changing the N doping contents. The power conversion efficiency of solar cells based on N-TiO 2 with the N doping content of 1% (N/Ti, atomic ratio) has been achieved 11.1%, which was 14.7% higher than that of solar cells based on un-doped TiO 2 . To get an insight into the improvement, some investigations were performed. The structure was examined with X-ray powder diffraction (XRD), and morphology was examined by scanning electron microscopy (SEM). Energy dispersive spectrometer (EDS) and Tauc plot spectra indicated the incorporation of N in TiO 2 nanorods. Absorption spectra showed higher absorption of visible light for N-TiO 2 than un-doped TiO 2 . The N doping reduced the energy band gap from 3.03 to 2.74 eV. The photoluminescence (PL) and time-resolved photoluminescence (TRPL) spectra displayed the faster electron transfer from perovskite layer to N-TiO 2 than to un-doped TiO 2 . Electrochemical impedance spectroscopy (EIS) showed the smaller resistance of device based on N-TiO 2 than that on un-doped TiO 2 .

Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Rupp, Jonathan A. J.; Querré, Madec; Kindsmüller, Andreas; Besland, Marie-Paule; Janod, Etienne; Dittmann, Regina; Waser, Rainer; Wouters, Dirk J.

2018-01-01

This study investigates resistive switching in amorphous undoped and Cr-doped vanadium oxide thin films synthesized by sputtering deposition at low oxygen partial pressure. Two different volatile threshold switching characteristics can occur as well as a non-volatile bipolar switching mechanism, depending on device stack symmetry and Cr-doping. The two threshold switching types are associated with different crystalline phases in the conduction filament created during an initial forming step. The first kind of threshold switching, observed for undoped vanadium oxide films, was, by its temperature dependence, proven to be associated with a thermally triggered insulator-to-metal transition in a crystalline VO2 phase, whereas the threshold switch observed in chromium doped films is stable up to 90 °C and shows characteristics of an electronically induced Mott transition. This different behaviour for undoped versus doped films has been attributed to an increased stability of V3+ due to the Cr3+ doping (as evidenced by X-ray photoelectron spectroscopy analysis), probably favouring the creation of a crystalline Cr-doped V2O3 phase (rather than a Cr-doped VO2 phase) during the energetic forming step. The symmetric Pt/a-(VCr)Ox/Pt device showing high temperature stable threshold switching may find interesting applications as a possible new selector device for resistive switching memory (ReRAM) crossbar arrays.

Epidemiology of ischemic heart disease in HIV.

PubMed

Triant, Virginia A; Grinspoon, Steven K

2017-11-01

The purpose of this review is to summarize and synthesize recent data on the risk of ischemic heart disease (IHD) in HIV-infected individuals. Recent studies in the field demonstrate an increasing impact of cardiovascular disease (CVD) on morbidity and mortality in HIV relative to AIDS-related diagnoses. Studies continue to support an approximately 1.5 to two-fold increased risk of IHD conferred by HIV, with specific risk varying by sex and virologic/immunologic status. Risk factors include both traditional CVD risk factors and novel, HIV-specific factors including inflammation and immune activation. Specific antiretroviral therapy (ART) drugs may increase CVD risk, yet the net effect of ART with viral suppression is beneficial with regard to CVD risk. Management of cardiovascular risk and prevention of CVD is complex, because current general population strategies target traditional CVD risk factors only. Extensive investigation is being directed at developing tailored CVD risk prediction algorithms and interventions to reduce CVD risk in HIV. Increased IHD risk is a significant clinical and public health challenge in HIV. The development and application of HIV-specific interventions to manage CVD risk factors and reduce CVD risk will improve the long-term health of this ageing population.

All-Cause and CVD Mortality in Native Hawaiians

PubMed Central

Aluli, N. Emmett; Reyes, Phillip W.; Brady, S. Kalani; Tsark, JoAnn U.; Jones, Kristina L.; Mau, Marjorie; Howard, Wm. J.; Howard, Barbara V.

2010-01-01

Aims Cardiovascular disease (CVD) is the leading cause of death among Native Hawaiians. In this article, all-cause and cardiovascular mortality rates among Native Hawaiians are examined, along with associated CVD risk factors. Methods A total of 855 Native Hawaiians (343 men and 512 women, ages 19–88) were examined as participants of the Cardiovascular Risk Clinics program (1992–1998) and underwent surveillance through September 2007. Cause of each death was determined by review of medical records, death certificates, newspapers, and through queries to community members. Results CVD accounted for 55% of deaths. Coronary heart disease (CHD) accounted for the majority of CVD deaths. CVD increased with age and was higher in those with diabetes, hypertension, or high low-density lipoprotein cholesterol (LDL-C). CVD rates were higher in men than in women and 4-fold higher in those with diabetes. In addition to age, diabetes, hypertension, and elevated LDL-C were major risk factors. Conclusions Diabetes is a major determinant of CVD in this population and most of the CVD is occurring in those with diabetes. Strategies to prevent diabetes and manage blood pressure and lipids should reduce CVD rates in Native Hawaiians. PMID:20392507

Prediction of cardiovascular risk in rheumatoid arthritis: performance of original and adapted SCORE algorithms.

PubMed

Arts, E E A; Popa, C D; Den Broeder, A A; Donders, R; Sandoo, A; Toms, T; Rollefstad, S; Ikdahl, E; Semb, A G; Kitas, G D; Van Riel, P L C M; Fransen, J

2016-04-01

Predictive performance of cardiovascular disease (CVD) risk calculators appears suboptimal in rheumatoid arthritis (RA). A disease-specific CVD risk algorithm may improve CVD risk prediction in RA. The objectives of this study are to adapt the Systematic COronary Risk Evaluation (SCORE) algorithm with determinants of CVD risk in RA and to assess the accuracy of CVD risk prediction calculated with the adapted SCORE algorithm. Data from the Nijmegen early RA inception cohort were used. The primary outcome was first CVD events. The SCORE algorithm was recalibrated by reweighing included traditional CVD risk factors and adapted by adding other potential predictors of CVD. Predictive performance of the recalibrated and adapted SCORE algorithms was assessed and the adapted SCORE was externally validated. Of the 1016 included patients with RA, 103 patients experienced a CVD event. Discriminatory ability was comparable across the original, recalibrated and adapted SCORE algorithms. The Hosmer-Lemeshow test results indicated that all three algorithms provided poor model fit (p<0.05) for the Nijmegen and external validation cohort. The adapted SCORE algorithm mainly improves CVD risk estimation in non-event cases and does not show a clear advantage in reclassifying patients with RA who develop CVD (event cases) into more appropriate risk groups. This study demonstrates for the first time that adaptations of the SCORE algorithm do not provide sufficient improvement in risk prediction of future CVD in RA to serve as an appropriate alternative to the original SCORE. Risk assessment using the original SCORE algorithm may underestimate CVD risk in patients with RA. Published by the BMJ Publishing Group Limited. For permission to use (where not already granted under a licence) please go to http://www.bmj.com/company/products-services/rights-and-licensing/

Carotid Plaque Score and Risk of Cardiovascular Mortality in the Oldest Old: Results from the TOOTH Study.

PubMed

Hirata, Takumi; Arai, Yasumichi; Takayama, Michiyo; Abe, Yukiko; Ohkuma, Kiyoshi; Takebayashi, Toru

2018-01-01

Accumulating evidence suggests that predictability of traditional cardiovascular risk factors declines with advancing age. We investigated whether carotid plaque scores (CPSs) were associated with cardiovascular disease (CVD) death in the oldest old, and whether asymmetrical dimethylarginine (ADMA), a marker of endothelial dysfunction, moderated the association between the CPS and CVD death. We conducted a prospective cohort study of Japanese subjects aged ≥85 years without CVD at baseline. We followed this cohort for 6 years to investigate the association of CPS with CVD death via multivariable Cox proportional hazard analysis. We divided participants into three groups according to CPS (no, 0 points; low, 1.2-4.9 points; high, ≥5.0 points). The predictive value of CPS for estimating CVD death risk over CVD risk factors, including ADMA, was examined using C-statistics. We analyzed 347 participants (151 men, 196 women; mean age, 87.6 years), of which 135 (38.9%) had no carotid plaque at baseline, and 48 (13.8%) had high CPS. Of the total, 29 (8.4%) participants experienced CVD-related death during the study period. Multivariable analysis revealed a significant association of high CPS with CVD-related mortality relative to no CPS (hazard ratio, 3.90; 95% confidence interval: 1.47-10.39). ADMA was not associated with CVD death, but the significant association between CPS and CVD death was observed only in lower ADMA level. The addition of CPS to other risk factors improved the predictability of CVD death (p=0.032). High CPS correlated significantly with a higher CVD death risk in the oldest old with low cardiovascular risk. Ultrasound carotid plaque evaluation might facilitate risk evaluations of CVD death in the very old.

Impact of anti-rheumatic treatment on cardiovascular risk in Asian patients with rheumatoid arthritis.

PubMed

Cho, Soo-Kyung; Kim, Dam; Won, Soyoung; Lee, Jiyoung; Park, ByeongJu; Jang, Eun Jin; Bae, Sang-Cheol; Sung, Yoon-Kyoung

2018-02-01

To estimate the incidence of cardiovascular disease (CVD) in Asian patients with rheumatoid arthritis (RA) and to evaluate the impact of anti-rheumatic treatment on the development of CVD. A retrospective cohort of Asian patients with RA was established to identify the incidence rate (IR) of CVD in RA patients. The cohort was generated using the Korean National Healthcare claims database, which contained claims from Jan 2009 to Dec 2013. A total of 137,512 RA patients were identified; individuals with a history of CVD for 6 months or more before the index date were excluded. Nested case-control samples were drawn from the full study population with a case:control ratio of 1:4 (n = 7102 cases; n = 27,018 controls without CVD). A conditional multivariate regression model was used to evaluate the impact of anti-rheumatic treatment on the development of CVD in RA patients after matching for age, sex, RA index date, comorbidities, and drug use (e.g., antiplatelet agents and cholesterol-lowering agents). The IR for development of overall CVD in RA patients was 182.1 (95% CI: 178.4-185.9) per 10,000 person-years. In models adjusted for other CVD risk factors, disease-modifying anti-rheumatic drugs (DMARDs) (OR = 0.79) were protective against CVD, and biologic DMARDs were not significantly associated with CVD risk (OR = 0.85). Corticosteroids (OR = 1.26) and NSAIDs (nonselective NSAIDs: OR = 1.32, Cox-2 inhibitors: OR = 1.31) were risk factors for CVD in RA patients. The use of DMARDs is protective against CVD, while corticosteroids and NSAIDs increased the risk of CVD in RA patients. Copyright © 2018 Elsevier Inc. All rights reserved.

Standard cardiovascular disease risk algorithms underestimate the risk of cardiovascular disease in schizophrenia: evidence from a national primary care database.

PubMed

McLean, Gary; Martin, Julie Langan; Martin, Daniel J; Guthrie, Bruce; Mercer, Stewart W; Smith, Daniel J

2014-10-01

Schizophrenia is associated with increased cardiovascular mortality. Although cardiovascular disease (CVD) risk prediction algorithms are widely in the general population, their utility for patients with schizophrenia is unknown. A primary care dataset was used to compare CVD risk scores (Joint British Societies (JBS) score), cardiovascular risk factors, rates of pre-existing CVD and age of first diagnosis of CVD for schizophrenia (n=1997) relative to population controls (n=215,165). Pre-existing rates of CVD and the recording of risk factors for those without CVD were higher in the schizophrenia cohort in the younger age groups, for both genders. Those with schizophrenia were more likely to have a first diagnosis of CVD at a younger age, with nearly half of men with schizophrenia plus CVD diagnosed under the age of 55 (schizophrenia men 46.1% vs. control men 34.8%, p<0.001; schizophrenia women 28.9% vs. control women 23.8%, p<0.001). However, despite high rates of CVD risk factors within the schizophrenia group, only a very small percentage (3.2% of men and 7.5% of women) of those with schizophrenia under age 55 were correctly identified as high risk for CVD according to the JBS risk algorithm. The JBS2 risk score identified only a small proportion of individuals with schizophrenia under the age of 55 as being at high risk of CVD, despite high rates of risk factors and high rates of first diagnosis of CVD within this age group. The validity of CVD risk prediction algorithms for schizophrenia needs further research. Copyright © 2014 Elsevier B.V. All rights reserved.

Iron Oxide Nanoparticles Employed as Seeds for the Induction of Microcrystalline Diamond Synthesis

PubMed Central

2008-01-01

Iron nanoparticles were employed to induce the synthesis of diamond on molybdenum, silicon, and quartz substrates. Diamond films were grown using conventional conditions for diamond synthesis by hot filament chemical vapor deposition, except that dispersed iron oxide nanoparticles replaced the seeding. X-ray diffraction, visible, and ultraviolet Raman Spectroscopy, energy-filtered transmission electron microscopy , electron energy-loss spectroscopy, and X-ray photoelectron spectroscopy (XPS) were employed to study the carbon bonding nature of the films and to analyze the carbon clustering around the seed nanoparticles leading to diamond synthesis. The results indicate that iron oxide nanoparticles lose the O atoms, becoming thus active C traps that induce the formation of a dense region of trigonally and tetrahedrally bonded carbon around them with the ensuing precipitation of diamond-type bonds that develop into microcrystalline diamond films under chemical vapor deposition conditions. This approach to diamond induction can be combined with dip pen nanolithography for the selective deposition of diamond and diamond patterning while avoiding surface damage associated to diamond-seeding methods.

Episodic diamond growth beneath the Kaapvaal Craton at Jwaneng Mine, Botswana

NASA Astrophysics Data System (ADS)

Gress, Michael U.; Howell, Daniel; Chinn, Ingrid L.; Speich, Laura; Kohn, Simon C.; van den Heuvel, Quint; Schulten, Ellen; Pals, Anna S. M.; Davies, Gareth R.

2018-05-01

Important implications for the interior workings of the Earth can be drawn by studying diamonds and their inclusions. To better understand the timing and number of diamond forming events beneath the NW margin of the Kaapvaal Craton, a comprehensive reassessment of Jwaneng's diamond populations has been undertaken. We report new inclusion abundance data from the visual examination of 130,000 diamonds that validate the predominance of an eclogitic diamond suite (up to 88%) with on average 5% inclusion-bearing diamonds (with inclusions >10 μm in size). From this population, polished plates from 79 diamonds of eclogitic and peridotitic paragenesis have been studied with cathodoluminescence (CL) imaging and infrared spectroscopy (FTIR) traverses. The majority (80%) record major changes in N concentration and aggregation states, as well as sharp boundaries in the CL images of individual plates that are interpreted to demarcate discrete diamond growth events. In addition, bulk FTIR data have been acquired for 373 unpolished diamonds. Silicate inclusions sampled from distinct growth zones define 2 compositional groups of omphacites and pyrope-almandines associated with different N contents in their diamond hosts. These findings reinforce previous observations that at Jwaneng at least seven individual diamond forming events can be identified - 3 peridotitic and 4 eclogitic. The results demonstrate that detailed examination of diamond plates by CL imaging and FTIR traverses is necessary to unveil the complex history recorded in diamonds.

Circulating Branched-Chain Amino Acids and Incident Cardiovascular Disease in a Prospective Cohort of US Women.

PubMed

Tobias, Deirdre K; Lawler, Patrick R; Harada, Paulo H; Demler, Olga V; Ridker, Paul M; Manson, JoAnn E; Cheng, Susan; Mora, Samia

2018-04-01

Circulating branched-chain amino acids (BCAAs; isoleucine, leucine, and valine) are strong predictors of type 2 diabetes mellitus (T2D), but their association with cardiovascular disease (CVD) is uncertain. We hypothesized that plasma BCAAs are positively associated with CVD risk and evaluated whether this was dependent on an intermediate diagnosis of T2D. Participants in the Women's Health Study prospective cohort were eligible if free of CVD at baseline blood collection (n=27 041). Plasma metabolites were measured via nuclear magnetic resonance spectroscopy. Multivariable Cox regression models estimated hazard ratios (HRs) and 95% confidence intervals (CIs) for BCAAs with incident CVD (myocardial infarction, stroke, and coronary revascularization). We confirmed 2207 CVD events over a mean 18.6 years of follow-up. Adjusting for age, body mass index, and other established CVD risk factors, total BCAAs were positively associated with CVD (per SD: HR, 1.13; 95% CI, 1.08-1.18), comparable to LDL-C (low-density lipoprotein cholesterol) with CVD (per SD: HR, 1.12; 95% CI, 1.07-1.17). BCAAs were associated with coronary events (myocardial infarction: HR, 1.16; 95% CI, 1.06-1.26; revascularization: HR, 1.17; 95% CI, 1.11-1.25), and borderline significant association with stroke (HR, 1.07; 95% CI, 0.99-1.15). The BCAA-CVD association was greater ( P interaction=0.036) among women who developed T2D before CVD (HR, 1.20; 95% CI, 1.08-1.32) versus women without T2D (HR, 1.08; 95% CI, 1.03-1.14). Adjusting for LDL-C, an established CVD risk factor, did not attenuate these findings; however, adjusting for HbA1c and insulin resistance eliminated the associations of BCAAs with CVD. Circulating plasma BCAAs were positively associated with incident CVD in women. Impaired BCAA metabolism may capture the long-term risk of the common cause underlying T2D and CVD. © 2018 American Heart Association, Inc.

Role of pharmacist in cardiovascular disease-related health promotion and in hypertension and dyslipidemia management: a cross-sectional study in the State of Qatar.

PubMed

El Hajj, Maguy Saffouh; Mahfoud, Ziyad R; Al Suwaidi, Jassim; Alkhiyami, Dania; Alasmar, Aya Riyad

2016-06-01

In Qatar, cardiovascular diseases (CVD) have recently become the leading cause of morbidity and mortality. Prevention, detection and management of CVD risk factors reduce CVD chance. The study objectives were to assess Qatar pharmacists' involvement in CVD health promotion, to identify the activities that they currently provide to patients with CVD risk factors, to describe their attitudes towards their involvement in CVD prevention and to assess their perceived barriers for provision of CVD prevention services We conducted a cross-sectional survey of community and ambulatory pharmacists in Qatar. Pharmacist characteristics, involvement in CVD-related activities along with their attitudes and perceived barriers were analysed using frequency distributions. Bivariate linear regression models were used to test for associations between CVD health promotion activity score and each variable. Variables with a P-value of 0.20 or less were included in the multivariate model. A total of 141 pharmacists completed the survey (response rate 60%). More than 70% responded with rarely or never to 6 out of the 10 CVD health promotion activities. Eighty-four per cent and 68% always or often describe to patients the appropriate time to take antihypertensive medications and the common medication adverse effects, respectively. Yet, 50% rarely or never review the medication refill history or provide adherence interventions. Lack of CVD educational materials was the top perceived barrier (55%) in addition to lack of having private counselling area (44.6%), and lack of time (38.3%). Females and community pharmacists were more involved in CVD health promotion (P = 0.046 and P = 0.017, respectively) than their counterparts. Health promotion practice increased with increasing attitudes score and decreased with increased barriers score (P = 0.012 and P = 0.001). The scope of pharmacy practice in CVD prevention is limited in Qatar. Efforts need to be exerted to increase pharmacists' involvement in CVD prevention. © 2015 John Wiley & Sons, Ltd.

Trace-element patterns of fibrous and monocrystalline diamonds: Insights into mantle fluids

NASA Astrophysics Data System (ADS)

Rege, S.; Griffin, W. L.; Pearson, N. J.; Araujo, D.; Zedgenizov, D.; O'Reilly, S. Y.

2010-08-01

During their growth diamonds may trap micron-scale inclusions of the fluids from which they grew, and these "time capsules" provide insights into the metasomatic processes that have modified the subcontinental lithospheric mantle. LAM-ICPMS analysis of trace elements in > 500 fibrous and monocrystalline diamonds worldwide has been used to understand the nature of these fluids. Analyses of fibrous diamonds define two general types of pattern, a "fibrous-high" (FH) one with high contents of LREE, Ba and K, and a "fibrous-low" (FL) pattern characterized by depletion in LREE/MREE, Ba and K, negative anomalies in Sr and Y, and subchondritic Zr/Hf and Nb/Ta. Both types may be found in fibrous diamonds from single deposits, and in three Yakutian pipes some diamonds show abrupt transitions from inclusion-rich cores with FH patterns to clearer rims with FL patterns. Most monocrystalline diamonds show FL-type patterns, but some have patterns that resemble those of FH fibrous diamonds. Peridotitic and eclogitic monocrystalline diamonds may show either patterns with relatively flat REE, or patterns with more strongly depleted LREE. Kimberlites that contain peridotitic diamonds with "high" patterns also contain eclogitic diamonds with "high" patterns. Strong similarities in the patterns of these two groups of diamonds may suggest high fluid/rock ratios. Many diamonds of the "superdeep" paragenesis have trace-element patterns similar to those of other monocrystalline diamonds. This may be evidence that the trace-element compositions of deep-seated fluids are generally similar to those that form diamonds in the subcontinental lithospheric mantle. The element fractionations observed between the FH and FL patterns are consistent with the immiscible separation of a silicic fluid from a carbonatite-silicate fluid, leaving a residual carbonatitic fluid strongly enriched in LREE, Ba and alkalies. This model would suggest that most monocrystalline diamonds crystallized from the more silicic fraction. Comparison with studies of single fluid inclusions in fibrous diamonds suggests that the FH patterns reflect trapped inclusions of high-Mg and low-Mg carbonatitic high-density fluids. In terms of the rock-forming elements, the fluids that precipitated the rims of some fibrous diamonds (FL pattern) and most monocrystalline diamonds are broadly similar to some hydro-silicic high-density fluids found in fibrous diamonds. However, there are still significant differences between the trace-element patterns of most monocrystalline diamonds and known high-density fluids, and further research is required to understand the formation and growth of these diamonds.

Fluid inclusions in Ebelyakh diamonds: Evidence of CO2 liberation in eclogite and the effect of H2O on diamond habit

NASA Astrophysics Data System (ADS)

Smith, Evan M.; Kopylova, Maya G.; Frezzotti, Maria Luce; Afanasiev, Valentin P.

2015-02-01

Fluid inclusions were studied in six octahedrally-grown, eclogitic diamonds from the Ebelyakh River mine, northern Russia, using microthermometry and Raman spectroscopy. The fluids are CO2-N2 mixtures with 40 ± 4 mol% N2, which are trapped along fractures that healed in the diamond stability field. The CO2-rich composition of the fluids provides the first empirical evidence that CO2 can be liberated as a free phase in eclogite in the diamond stability field of the lithospheric mantle, as has been previously predicted from theory. This finding means that the interpretation of carbon isotopes in eclogitic diamonds should not overlook isotopic fractionation due to CO2 liberation from carbonatitic diamond-forming media as it percolates through eclogites. Preferential nucleation of CO2 bubbles in eclogite compared to peridotite may lead to a rock type-specific fracturing mechanism and sampling bias that would help explain the overabundance of eclogite xenoliths in kimberlites. Fluid inclusions in octahedrally-grown, non-fibrous diamonds from both the studied Ebelyakh diamonds and those from other cratons do not show detectable amounts of water. In comparison, fibrous diamond fluid inclusions typically contain 10-25 wt.% water. The absence of "dry" fluids in fibrous diamonds and the presence of these in octahedrally-grown diamonds may indicate different compositions of fluids equilibrated with these two types of diamonds. If there is variability in the water content in diamond-forming fluids, it should affect diamond growth morphology. Water could be responsible for causing fibrous diamond growth, by inhibiting the advancement of growth steps within octahedral faces.

Nature of diamonds in Yakutian eclogites: views from eclogite tomography and mineral inclusions in diamonds

NASA Astrophysics Data System (ADS)

Anand, Mahesh; Taylor, Lawrence A.; Misra, Kula C.; Carlson, William D.; Sobolev, Nikolai V.

2004-09-01

We have performed dissections of two diamondiferous eclogites (UX-1 and U33/1) from the Udachnaya kimberlite, Yakutia in order to understand the nature of diamond formation and the relationship between the diamonds, their mineral inclusions, and host eclogite minerals. Diamonds were carefully recovered from each xenolith, based upon high-resolution X-ray tomography images and three-dimensional models. The nature and physical properties of minerals, in direct contact with diamonds, were investigated at the time of diamond extraction. Polished sections of the eclogites were made, containing the mould areas of the diamonds, to further investigate the chemical compositions of the host minerals and the phases that were in contact with diamonds. Major- and minor-element compositions of silicate and sulfide mineral inclusions in diamonds show variations among each other, and from those in the host eclogites. Oxygen isotope compositions of one garnet and five clinopyroxene inclusions in diamonds from another Udachnaya eclogite (U51) span the entire range recorded for eclogite xenoliths from Udachnaya. In addition, the reported compositions of almost all clinopyroxene inclusions in U51 diamonds exhibit positive Eu anomaly. This feature, together with the oxygen isotopic characteristics, is consistent with the well-established hypothesis of subduction origin for Udachnaya eclogite xenoliths. It is intuitive to expect that all eclogite xenoliths in a particular kimberlite should have common heritage, at least with respect to their included diamonds. However, the variation in the composition of multiple inclusions within diamonds, and among diamonds, from the same eclogite indicates the involvement of complex processes in diamond genesis, at least in the eclogite xenoliths from Yakutia that we have studied.

Cognitive vulnerability to depression during middle childhood: Stability and associations with maternal affective styles and parental depression

PubMed Central

Hayden, Elizabeth P.; Olino, Thomas M.; Mackrell, Sarah V.M.; Jordan, Patricia L.; Desjardins, Jasmine; Katsiroumbas, Patrice

2014-01-01

Theories of cognitive vulnerability to depression (CVD) imply that CVD is early-emerging and trait-like; however, little longitudinal work has tested this premise in middle childhood, or examined theoretically relevant predictors of child CVD. We examined test–retest correlations of self-referent encoding task performance and self-reported attributional styles and their associations with parental characteristics in 205 seven-year-olds. At baseline, child CVD was assessed, structured clinical interviews were conducted with parents, and ratings of observed maternal affective styles were made. Children’s CVD was re-assessed approximately one and two years later. Both measures of children’s CVD were prospectively and concurrently associated with children’s depressive symptoms and showed modest stability. Multilevel modeling indicated that maternal criticism and paternal depression were related to children’s CVD. Findings indicate that even early-emerging CVD is a valid marker of children’s depression risk. PMID:25392596

Voltammetric and impedance behaviours of surface-treated nano-crystalline diamond film electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, F. B.; Jing, B.; Cui, Y.

2015-04-15

The electrochemical performances of hydrogen- and oxygen-terminated nano-crystalline diamond film electrodes were investigated by cyclic voltammetry and AC impedance spectroscopy. In addition, the surface morphologies, phase structures, and chemical states of the two diamond films were analysed by scanning probe microscopy, Raman spectroscopy, and X-ray photoelectron spectroscopy, respectively. The results indicated that the potential window is narrower for the hydrogen-terminated nano-crystalline diamond film than for the oxygen-terminated one. The diamond film resistance and capacitance of oxygen-terminated diamond film are much larger than those of the hydrogen-terminated diamond film, and the polarization resistances and double-layer capacitance corresponding to oxygen-terminated diamond filmmore » are both one order of magnitude larger than those corresponding to the hydrogen-terminated diamond film. The electrochemical behaviours of the two diamond film electrodes are discussed.« less

Dietary antioxidant capacity of the patients with cardiovascular disease in a cross-sectional study.

PubMed

Zujko, Małgorzata E; Witkowska, Anna M; Waśkiewicz, Anna; Piotrowski, Walerian; Terlikowska, Katarzyna M

2015-03-15

The purpose of this study was to establish sources and patterns of antioxidant, polyphenol and flavonoid intakes in men and women with cardiovascular disease (CVD). The subjects with CVD and healthy controls (HC) were participants of the Polish National Multicenter Health Survey (WOBASZ). Food intakes were measured with the 1-day 24-hour recall method. A self-developed database was used to calculate dietary total antioxidant capacity (DTAC), dietary total polyphenol content (DTPC) and dietary total flavonoid content (DTFC). DTAC did not differ between the men with CVD and HC men (6442 vs. 6066 μmol trolox equivalents - TE), but in the women with CVD it was significantly higher than in the HC women (6182 vs. 5500 μmol TE). The main sources of antioxidants in the males with CVD were: tea, coffee, apples, and nuts and seeds, and tea, coffee and apples in HC. In the females they were: tea, coffee, apples and strawberries, both in the women with CVD and HC. DTPC in the men with CVD did not differ from HC (1198 vs. 1114 mg gallic acid equivalents, GAE). In the females, DTPC was significantly higher in the subjects with CVD as compared to HC (1075 vs. 981 mg GAE). Predominant sources of polyphenols were: tea, coffee, cabbage, potatoes, apples and white bread in the men with CVD, and tea, coffee, potatoes, white bread and apples in HC, while in the women (both with CVD and HC): tea, coffee, apples, potatoes and cabbage. No differences in DTFC have been found between the males with CVD and HC (212 vs. 202 mg quercetine equivalents, QE). In the women with CVD, DTFC was significantly higher than in HC (200 vs. 177 mg QE). Main sources of flavonoids in all participants (men and women, CVD and HC) were tea, apples, cabbage and coffee. Polish men and women faced with CVD beneficially modify their dietary practices by enhancing intakes of foods that are sources of antioxidants, polyphenols and flavonoids. Different sources and patterns of antioxidant, polyphenol and flavonoid intakes, however, between male and female patients with CVD were observed.

Screening for Cardiovascular Disease Risk With Electrocardiography: US Preventive Services Task Force Recommendation Statement.

PubMed

Curry, Susan J; Krist, Alex H; Owens, Douglas K; Barry, Michael J; Caughey, Aaron B; Davidson, Karina W; Doubeni, Chyke A; Epling, John W; Kemper, Alex R; Kubik, Martha; Landefeld, C Seth; Mangione, Carol M; Silverstein, Michael; Simon, Melissa A; Tseng, Chien-Wen; Wong, John B

2018-06-12

Cardiovascular disease (CVD), which encompasses atherosclerotic conditions such as coronary heart disease, cerebrovascular disease, and peripheral arterial disease, is the most common cause of death among adults in the United States. Treatment to prevent CVD events by modifying risk factors is currently informed by CVD risk assessment with tools such as the Framingham Risk Score or the Pooled Cohort Equations, which stratify individual risk to inform treatment decisions. To update the 2012 US Preventive Services Task Force (USPSTF) recommendation on screening for coronary heart disease with electrocardiography (ECG). The USPSTF reviewed the evidence on whether screening with resting or exercise ECG improves health outcomes compared with the use of traditional CVD risk assessment alone in asymptomatic adults. For asymptomatic adults at low risk of CVD events (individuals with a 10-year CVD event risk less than 10%), it is very unlikely that the information from resting or exercise ECG (beyond that obtained with conventional CVD risk factors) will result in a change in the patient's risk category as assessed by the Framingham Risk Score or Pooled Cohort Equations that would lead to a change in treatment and ultimately improve health outcomes. Possible harms are associated with screening with resting or exercise ECG, specifically the potential adverse effects of subsequent invasive testing. For asymptomatic adults at intermediate or high risk of CVD events, there is insufficient evidence to determine the extent to which information from resting or exercise ECG adds to current CVD risk assessment models and whether information from the ECG results in a change in risk management and ultimately reduces CVD events. As with low-risk adults, possible harms are associated with screening with resting or exercise ECG in asymptomatic adults at intermediate or high risk of CVD events. The USPSTF recommends against screening with resting or exercise ECG to prevent CVD events in asymptomatic adults at low risk of CVD events. (D recommendation) The USPSTF concludes that the current evidence is insufficient to assess the balance of benefits and harms of screening with resting or exercise ECG to prevent CVD events in asymptomatic adults at intermediate or high risk of CVD events. (I statement).

Correlates for cardiovascular diseases among diabetic/hypertensive patients attending outreach clinics in two Nairobi slums, Kenya

PubMed Central

Mugure, Gladys; Karama, Mohamed; Kyobutungi, Catherine; Karanja, Simon

2014-01-01

Introduction Cardiovascular diseases (CVD) are the leading cause of death in the world. Over 80% of CVD related deaths occur in low- and middle-income countries (LMICs). Diabetes and hypertension, whose prevalence in Kenya is on the rise, are major risk factors for CVD. Despite this, studies indicate that awareness on the management of risk factors for CVD among diabetic/hypertensive patients in African populations is generally low. The aim of the study was to determine the risk factors for CVD among diabetic and/or hypertensive patients attending diabetes and hypertension management clinics in Korogocho and Viwandani slums of Nairobi. Methods Data were collected using questionnaires administered to 206 diabetic/hypertensive patients attending the clinics between July 2010 and February 2011. A review of these patients’ medical records was done to determine the history of CVD outcomes such as hypertensive heart diseases, stroke and peripheral arterial diseases. Results Majority (66.5%) of the study participants were females mainly in the 51-65 age category. The study findings revealed that 73 (33.4%) respondents had CVD outcomes. In addition, 41.8% of the respondents were not aware of the causes of diabetes/hypertension. Age category 51-65 years had the highest (43.8%) number of respondents with CVD. Sex of the respondents and awareness of the link between hypertension and CVD were significantly associated with CVD outcomes (p<0.05) among the respondents. Conclusion Measures to improve awareness levels among patients at high risk of CVD outcomes are needed to complement other measures to reduce CVD risk among such patients. PMID:25852804

Fibrinogen concentration and its role in CVD risk in black South Africans--effect of urbanisation.

PubMed

Pieters, Marlien; de Maat, Moniek P M; Jerling, Johann C; Hoekstra, Tiny; Kruger, Annamarie

2011-09-01

The aim of this study was to investigate correlates of fibrinogen concentration in black South Africans, as well as its association with cardiovascular disease (CVD) risk and whether urbanisation influences this association. A total of 1,006 rural and 1,004 urban black South Africans from the PURE study were cross-sectionally analysed. The association of fibrinogen with CVD risk was determined by investigating the association of fibrinogen with other CVD risk markers as well as with predicted CVD risk using the Reynolds Risk score. The rural group had a significantly higher fibrinogen concentration than the urban group, despite higher levels of risk factors and increased predicted CVD risk in the urban group. Increased levels of CVD risk factors were, however, still associated with increased fibrinogen concentration. Fibrinogen correlated significantly, but weakly, with overall predicted CVD risk. This correlation was stronger in the urban than in the rural group. Multiple regression analysis showed that a smaller percentage of the variance in fibrinogen is explained by the traditional CVD risk factors in the rural than in the urban group. In conclusion, fibrinogen is weakly associated with CVD risk (predicted overall risk as well with individual risk factors) in black South Africans, and is related to the degree of urbanisation. Increased fibrinogen concentration, in black South Africans, especially in rural areas, is largely unexplained, and likely not strongly correlated with traditional CVD-related lifestyle and pathophysiological processes. This does, however, not exclude the possibility that once increased, the fibrinogen concentration contributes to future development of CVD.

Electron energy loss spectrometry of interstellar diamonds

NASA Technical Reports Server (NTRS)

Bernatowicz, Thomas J.; Gibbons, Patrick C.; Lewis, Roy S.

1990-01-01

The results are reported of electron energy loss spectra (EELS) measurements on diamond residues from carbonaceous meteorites designed to elucidate the structure and composition of interstellar diamonds. Dynamic effective medium theory is used to model the dielectric properties of the diamonds and in particular to synthesize the observed spectra as mixtures of diamond and various pi-bonded carbons. The results are shown to be quantitatively consistent with the idea that diamonds and their surfaces are the only contributors to the electron energy loss spectra of the diamond residues and that these peculiar spectra are the result of the exceptionally small grain size and large specific surface area of the interstellar diamonds.

Diamond/diamond-like carbon coated nanotube structures for efficient electron field emission

NASA Technical Reports Server (NTRS)

Dimitrijevic, Steven (Inventor); Withers, James C. (Inventor); Loutfy, Raouf O. (Inventor)

2005-01-01

The present invention is directed to a nanotube coated with diamond or diamond-like carbon, a field emitter cathode comprising same, and a field emitter comprising the cathode. It is also directed to a method of preventing the evaporation of carbon from a field emitter comprising a cathode comprised of nanotubes by coating the nanotube with diamond or diamond-like carbon. In another aspect, the present invention is directed to a method of preventing the evaporation of carbon from an electron field emitter comprising a cathode comprised of nanotubes, which method comprises coating the nanotubes with diamond or diamond-like carbon.

Fabrication of microchannels in polycrystalline diamond using pre-fabricated Si substrates

NASA Astrophysics Data System (ADS)

Chandran, Maneesh; Elfimchev, Sergey; Michaelson, Shaul; Akhvlediani, Rozalia; Ternyak, Orna; Hoffman, Alon

2017-10-01

In this paper, we report on a simple, feasible method to fabricate microchannels in diamond. Polycrystalline diamond microchannels were produced by fabricating trenches in a Si wafer and subsequently depositing a thin layer of diamond onto this substrate using the hot filament vapor deposition technique. Fabrication of trenches in the Si substrate at different depths was carried out by standard photolithography, and the subsequent deposition of the diamond layer was performed by the hot filament chemical vapor deposition technique. The growth mechanism of diamond that leads to the formation of closed diamond microchannels is discussed in detail based on the Knudsen number and growth chemistry of diamond. Variations in the crystallite size, crystalline quality, and thickness of the diamond layer along the trench depths were systematically analyzed using cross-sectional scanning electron microscopy and Raman spectroscopy. Defect density and formation of non-diamond forms of carbon in the diamond layer were found to increase with the trench depth, which sets a limit of 5-45 μm trench depth (or an aspect ratio of 1-9) for the fabrication of diamond microchannels using this method under the present conditions.

Diamond For Optical Material

NASA Astrophysics Data System (ADS)

Clay, Robert D.; Clay, John P.

1984-12-01

Clay Engineering Inc. currently has a proposal before DARPA to manufacture large optical quality diamond for use as optical material. The manufactured diamond will be approximately 100 mm in diameter by 100 mm long. The cost of producing the diamond is expected to be three dollars per carat. It is expected that total impurities of a few parts per billion can readily be obtained. A study of diamond is a study of the effects of impurities. The elements boron and nitrogen can replace carbon atoms in the lattice structure, making diamond a "P" or "N" type semiconductor. Diamonds which are not semiconductors are classified as type IIa. The presence of B or N in the lattice causes diamond to photoconduct in ultraviolet light. All type I and III) and most type IIa diamonds photoconduct. The manufactured diamond will not photoconduct and will have an electrical resistivity greater than 1018 ohm*m. All non-lattice impurities are in the form of inclusions which dramatically affect the mechanical properties of diamond. High purity diamond has a coefficient of absorption of order 10-3 cm-1 at wavelengths of 8 to 12 micro metres, which makes it useful for infrared applications. It also has a low coefficient of absorption at wavelengths greater than 12 micro metres. For missile and aircraft applications, diamond is relatively immune to erosion or pitting damage by sand and rain. Diamond will readily withstand the stagnation temperature of Mach 3 flight and will go to Mach 4.8 with an anti-reflective coating to protect it from oxygen attack. Diamond is highly resistant to thermal shock, which makes it valuable for high energy laser applications. Using R = St (1-)) k/Ea as a measure of thermal shock resistance, diamond is 107 w/m vs "sapphire" and Zerodur at 104 and fused quartz at 1.45x103. Diamond does not perform well in the 2.5-7.5 micro metres and less than 0.4 micro metres wavelengths. Intense beams of less than 0.4 micro metres energy can create color centers in diamond. For laser pulses of such short duration that thermal shock is not a problem, diamond will take less peak power than some competing materials, such as quartz. One could take advantage of the superior strength of diamond and use a thinner slice to obtain equal peak power capacity.

Bases of the Mantle-Carbonatite Conception of Diamond Genesis

NASA Astrophysics Data System (ADS)

Litvin, Yuriy; Spivak, Anna; Kuzyura, Anastasia

2016-04-01

In the mantle-carbonatite conception of diamond genesis, the results of physic-chemical experiments are coordinated with the data of analytic mineralogy of primary inclusions in natural diamonds. Generalization of the solutions of principal genetic problems constitutes the bases of the conception. The solutions are following: (1) it is grounded that diamond-parental melts of the upper mantle have peridotite/eclogite - carbonatite - carbon compositions, of the transition zone - (wadsleite↔ringwoodite) - majorite - stishovite - carbonatite - carbon compositions, and of the lower mantle - periclase/wustite - bridgmanite - Ca-perovskite -stishovite - carbonatite - carbon compositions; (2) a construction of generalized diagrams for the diamond-parental media, which reveal changeable compositions of the growth melts of diamonds and associated phases, their genetic relations to the mantle substance, and classification connections of the primary inclusions in natural diamonds; (3) experimental equilibrium phase diagrams of syngenesis of diamonds and primary inclusions, which characterize the nucleation and growth conditions of diamonds and a capture of paragenetic and xenogenetic minerals by the growing diamonds; (4) a determination of the phase diagrams of diamonds and inclusions syngenesis under the regime of fractional crystallization, which discover the regularities of ultrabasic-basic evolution and paragenesis transitions in the diamond-forming systems of the upper and lower mantle. The evidence of the physic-chemically united mode of diamond genesis at the mantle depths with different mineralogy is obtained. References. Litvin Yu.A. (2007). High-pressure mineralogy of diamond genesis. In: Advances in High-Pressure Mineralogy (edited by Eiji Ohtani), Geological Society of America Special paper 421, 83-103. Litvin Yu.A. (2012). Experimental study of physic-chemical conditions of natural diamond formation on an example of the eclogite-carbonatite-sulphide-diamond system. Geology of Ore Deposits. 54(6), 523-539. Litvin Yu.A., Spivak A.V., Solopova N.A., Dubrovinsky L.S. (2014). On origin of lower-mantle diamonds and their primary inclusions. Physics of the Earth and Planetary Interiors, 228 (The Liebermann Volume), 176-185. http://dx.doi.org/10.1016/j/pepi/2013.12.007

Alluvial Diamond Resource Potential and Production Capacity Assessment of Ghana

USGS Publications Warehouse

Chirico, Peter G.; Malpeli, Katherine C.; Anum, Solomon; Phillips, Emily C.

2010-01-01

In May of 2000, a meeting was convened in Kimberley, South Africa, and attended by representatives of the diamond industry and leaders of African governments to develop a certification process intended to assure that rough, exported diamonds were free of conflictual concerns. This meeting was supported later in 2000 by the United Nations in a resolution adopted by the General Assembly. By 2002, the Kimberley Process Certification Scheme (KPCS) was ratified and signed by both diamond-producing and diamond-importing countries. Over 70 countries were included as members at the end of 2007. To prevent trade in 'conflict' diamonds while protecting legitimate trade, the KPCS requires that each country set up an internal system of controls to prevent conflict diamonds from entering any imported or exported shipments of rough diamonds. Every diamond or diamond shipment must be accompanied by a Kimberley Process (KP) certificate and be contained in tamper-proof packaging. The objective of this study was to assess the alluvial diamond resource endowment and current production capacity of the alluvial diamond-mining sector in Ghana. A modified volume and grade methodology was used to estimate the remaining diamond reserves within the Birim and Bonsa diamond fields. The production capacity of the sector was estimated using a formulaic expression of the number of workers reported in the sector, their productivity, and the average grade of deposits mined. This study estimates that there are approximately 91,600,000 carats of alluvial diamonds remaining in both the Birim and Bonsa diamond fields: 89,000,000 carats in the Birim and 2,600,000 carats in the Bonsa. Production capacity is calculated to be 765,000 carats per year, based on the formula used and available data on the number of workers and worker productivity. Annual production is highly dependent on the international diamond market and prices, the numbers of seasonal workers actively mining in the sector, and environmental conditions, which influence seasonal farming.

Absolute age Determinations on Diamond by Radioisotopic Methods: NOT the way to Accurately Identify Diamond Provenance

NASA Astrophysics Data System (ADS)

Shirey, S. B.

2002-05-01

Gem-quality diamond contains such low abundances of parent-daughter radionuclides that dating the diamond lattice directly by isotopic measurements has been and will be impossible. Absolute ages on diamonds typically are obtained through measurements of their syngenetic mineral inclusions: Rb-Sr in garnet; Sm-Nd in garnet and pyroxene; Re-Os and U-Th-Pb in sulfide; K-Ar in pyroxene; and U-Pb in zircon. The application of the first two isotope schemes in the list requires putting together many inclusions from many diamonds whereas the latter isotope schemes permit ages on single diamonds. The key limitations on the application of these decay pairs are the availability and size of the inclusions, the abundance levels of the radionuclides, and instrumental sensitivity. Practical complications of radioisotope dating of inclusions are fatal to the application of the technique for diamond provenance. In all mines, the ratio of gem-quality diamonds to stones with datable inclusions is very high. Thus there is no way to date the valuable, marketable stones that are part of the conflict diamond problem, just their rare, flawed cousins. Each analysis destroys the diamond host plus the inclusion and can only be carried out in research labs by highly trained scientists. Thus, these methods can not be automated or applied to the bulk of diamond production. The geological problems with age dating are equally fatal to its application to diamond provenance. From the geological perspective, for age determination to work as a tool for diamond provenance studies, diamond ages would have to be specific to particular kimberlites or kimberlite fields and different between fields. The southern African Kaapvaal-Zimbabwe Craton and Limpopo Mobile Belt is the only cratonic region where age determinations have been applied on a large enough scale to a number of kimberlites to illustrate the geological problems in age measurements for diamond provenance. However, this southern African example is seen as typical of other cratons. Here, the nearly universal occurrence of Archean or Proterozoic diamonds in much younger (often Cretaceous) kimberlites proves that diamonds are xenocrysts inherited from the ancient mantle lithospheric keel by the host kimberlite as it erupts. Differences in diamond ages are on the scale of the geological assembly of the mantle lithospheric keel and relate to geological terranes in the lithosphere; they have little to do with individual kimberlites. In southern Africa, two age groupings of diamonds exist: Archean (3.2 to 2.9 Ga) diamonds associated with initial creation/final stabilization of the mantle lithosphere and Proterozoic (1 to 2 Ga) diamonds associated with compositional changes to the mantle keel from magmatism and metasomatism. The distribution of these two age types is cratonwide, encompasses many kimberlites and both age groupings can occur in an individual kimberlite. One expects a recurrence of similar ages with a possible 2 Ga age spread from many different kimberlites across the craton. Similar old ages are seen on other cratons (e.g. Siberian, Slave); thus age can not even distinguish diamond source at the scale of a craton. A further complication is that both sampling of diamonds from their lithospheric host and the resting position of diamonds at the final solidification level of the kimberlite in the crust are accidental. This can produce significant variability in the diamond population which is further complicated if erosion and deposition of the diamonds to form alluvial deposits has obscured their host kimberlite.

Diamonds in an Archean greenstone belt: Diamond suites in unconventional rocks of Wawa, Northern Ontario (Canada)

NASA Astrophysics Data System (ADS)

Kopylova, Maya; Bruce, Loryn; Ryder, John

2010-05-01

Diamonds typically are found on Archean cratons entrained by younger Phanerozoic kimberlites. In contrast, Wawa diamonds are hosted in "unconventional", non-kimberlitic rocks that formed contemporaneously with the mafic and sedimentary rocks of the Archean Michipicoten Greenstone Belt (MGB). We studied two diamond suites that occur within the 2.9-2.7 Ga greenschist facies rocks of MGB located in the southwest portion of the Superior Craton (E. Canada). The first diamond suite henceforth referred to as the Wawa breccia diamonds (384 stones), are hosted in the 2618-2744 Ma calc-alkaline lamprophyres and volcaniclastic breccias, contemporaneous with pillow basalts and felsic volcanics of MGB. The second suite, the Wawa conglomerate diamonds (80 crystals), are hosted in the 2697-2700 Ma poorly sorted sedimentary polymictic conglomerate which is interpreted as a proximal alluvial fan debris flow in a fan-delta environment. The majority of the diamonds was found within the matrix of the conglomerate. The diamondiferous breccia occurs 20 km north of the town of Wawa, whereas the conglomerate is found 12 km northeast of Wawa. Diamonds from the 2 occurrences were characterized and described for provenance studies. Both the breccia and conglomerate diamonds show similar crystal habits, with the predominance of octahedral single crystals and ~ 10% of cubes. The conglomerate diamonds are significantly less resorbed (no resorbtion in 43% of the stones) than the breccia diamonds (8% non-resorbed stones). In both suites, only 21-24% show high degrees of resorption. The majority of crystals in both suites are colourless, with some yellow, brown and grey stones. Conglomerate diamonds had a wider variety of colours that were not seen in the breccia diamonds, including green and pink. The breccia diamonds contain 0-740 ppm N and show two modes of N aggregation at 0-30 and 60-95%. Among the breccia diamonds, Type IaA stones comprise 17%, whereas IaAB stones make up 49% of the population. Diamonds from the conglomerate have nitrogen contents below 400 ppm N, with 47% of the suite being Type IaA stones. Approximately one third of the conglomerate and breccia diamonds belongs to Type II having no measurable N. The two suites of Wawa diamonds, according to the morphology and nitrogen studies, are deemed to be different. The conglomerate diamonds are significantly less resorbed and contain less aggregated N. The diamonds that occur in the Wawa breccia and conglomerate have different primary volcanic sources. We suggest that the primary volcanic rock of the conglomerate diamonds may be a kimberlite, as kimberlitic indicator minerals are found in the matrix of the conglomerate. These indicator minerals garnet, Cr diopside and ilmenite are absent from the diamoniferous lamprophyric breccias. The hypothetical kimberlites may have occured in proximity to the conglomerates as suggested by low mechanical abrasion of the conglomerate diamonds and indicator minerals, and the preservation of garnet kelyphitic rims and Cr-diopside. Our study infers an episode of the Archean, pre-2.7 Ga kimberlite magmatism in MGB, which also experienced multiple emplacement episodes of the 2.7 Ga syn-orogenic diamondiferous calc-alkaline lamprophyres. Despite the distinct origins of the breccia and conglomerate diamonds, they all have similar red-orange-green cathodoluminescence colours controlled by the CL emission mainly at 520 nm. This contrasts with the prevalent CL emission at 415-440 nm commonly observed in kimberlitic and detrital diamonds. We ascribe the red-orange-green CL colours of the two diamond suites of Wawa to the late imprint of metamorphism.

Effective thermal and mechanical properties of polycrystalline diamond films

NASA Astrophysics Data System (ADS)

Cheng, Hao-Yu; Yang, Chi-Yuan; Yang, Li-Chueh; Peng, Kun-Cheng; Chia, Chih-Ta; Liu, Shiu-Jen; Lin, I.-Nan; Lin, Kung-Hsuan

2018-04-01

Polycrystalline diamond films were demonstrated as good candidates for electron field emitters, and their mechanical/thermal properties should thus be considered for real devices. We utilized ultrafast optical techniques to investigate the phonon dynamics of several polycrystalline diamond films, prepared by microwave plasma enhanced chemical vapor deposition. The mechanical properties (longitudinal acoustic velocity) and thermal conductivities of diamond films were evaluated from the coherent and incoherent phonon dynamics, respectively. Ultrananocrystalline diamond films were grown using a CH4 (2%)/Ar plasma, while microcrystalline diamond films were grown using a CH4 (2%)/H2 plasma. The ultrananocrystalline diamond film (with a grain size of several nanometers) possesses low acoustic velocity (14.5 nm/ps) and low thermal conductivity (3.17 W/m K) compared with other kinds of diamond films. The acoustic velocity of diamond films increased abruptly to nearly the same as that of natural diamond and remained there when the rod-shaped diamond grains were induced due to the incorporation of H2 in the growth plasma (CH4/Ar). The thermal conductivities of the materials increased monotonously with increasing incorporation of H2 in the growth plasma (CH4/Ar). The thermal conductivity of 25.6 W/m K was attained for nanocrystalline diamond films containing spherical diamond grains (with a size of several tens of nanometers). Compared with single crystalline diamond, the low thermal conductivity of polycrystalline films results from phonon scattering at the interfaces of grains and amorphous carbon in the boundary phases.

Photoreflectance measurements of unintentional impurity concentrations in undoped GaAs

NASA Astrophysics Data System (ADS)

Sydor, Michael; Angelo, James; Mitchel, William; Haas, T. W.; Yen, Ming-Yuan

1989-07-01

Modulated photoreflectance is used to measure the unintentional impurity concentrations in undoped epitaxial GaAs. A photoreflectance signal above the band gap spreads with the unintentional impurity concentrations and shows well-defined Franz-Keldysh peaks whose separation provide a good measure of the current carrier concentrations. In samples less than 3-micron thick, a photoreflectance signal at the band edge contains a substrate-epilayer interface effect which precludes the analysis of the data by using the customary third derivative functional fits for low electric fields.

Effect of Impurities on O and Al Boundary Diffusion in Alumina: Application Alumina Scale Growth in Alloys

DTIC Science & Technology

2012-01-24

of Ni alone enhances transport by approximately a factor of 2 relative to undoped alumina. The diffusive transport of chromium in both pure and Y...doped fine-grained alumina has been investigated over the temperature range 1250 -1650 C. From a quantitative assessment of the chromium diffusion...diffusion of chromium in both undoped and Y-doped fine-grained alumina has been investigated. In this work, Cr + was employed as a plausible substitute

Origin of the defects-induced ferromagnetism in un-doped ZnO single crystals

NASA Astrophysics Data System (ADS)

Zhan, Peng; Xie, Zheng; Li, Zhengcao; Wang, Weipeng; Zhang, Zhengjun; Li, Zhuoxin; Cheng, Guodong; Zhang, Peng; Wang, Baoyi; Cao, Xingzhong

2013-02-01

We clarified, in this Letter, that in un-doped ZnO single crystals after thermal annealing in flowing argon, the defects-induced room-temperature ferromagnetism was originated from the surface defects and specifically, from singly occupied oxygen vacancies denoted as F+, by the optical and electrical properties measurements as well as positron annihilation analysis. In addition, a positive linear relationship was observed between the ferromagnetism and the F+ concentration, which is in support with the above clarification.

Non-aqueous solution preparation of doped and undoped Li{sub x}Mn{sub y}O{sub z}

DOEpatents

Boyle, T.J.; Voigt, J.A.

1997-05-20

A method is described for generation of phase-pure doped and undoped Li{sub x}Mn{sub y}O{sub z} precursors. The method of this invention uses organic solutions instead of aqueous solutions or nonsolution ball milling of dry powders to produce phase-pure precursors. These precursors can be used as cathodes for lithium-polymer electrolyte batteries. Dopants may be homogeneously incorporated to alter the characteristics of the powder. 1 fig.

High-Temperature Spintronic Devices and Circuits in Absence of Magnetic Field

DTIC Science & Technology

2012-04-23

non-equilibrium Green’s function (NEGF) formalism. • Molecular beam epitaxy (MBE) growth of ferromagnetic metals (Fe, MnAs) and...measured for two diode injection currents in the Faraday geometry. The quantum dot microcavity device was grown by molecular beam epitaxy with a low...channel (10 nm, lxlOl9j Mn-doped) / undoped-AlAs (1 nm) tunnel barrier / undoped-GaAs (0.5 nm) / MnAs (25 nm) were grown by molecular beam epitaxy (MBE

Ion Microscopy on Diamond

NASA Astrophysics Data System (ADS)

Manfredotti, Claudio

Because of its physical properties (strong radiation hardness, wide energy gap with a consequent extremely low dark current, very large electron and hole mobility) diamond is a very good candidate for nuclear particle detection, particularly in harsh environments or in conditions of strong radiation damage. Being commonly polycrystalline, diamond samples obtained by chemical vapour deposition (CVD) are not homogeneous, not only from the morphological point of view, but also from the electronic one. As a consequence, as it was indicated quite early starting from 1995, charge collection properties such as charge collection efficiency (cce) are not uniform, but they are depending on the site hit by incoming particle. Moreover, these properties are influenced by previous irradiations which are used in order to improve them and, finally, they are also dependent on the thickness of the sample, since the electronic non uniformity extends also in depth by affecting the profile of the electrical field from top to bottom electrode of the nuclear detector in the standard "sandwich" arrangement. By the use of focussed ion beams, it is possible to investigate these non uniformities by the aid of techniques like IBIC (Ion Beam Induced Charge) and IBIL (Ion Beam Induced Luminescence) with a space resolution of the order of 1 m. This relatively new kind of microscopy, which is called "ion microscopy", is capable not only to give 2D maps of cce, which can be quite precisely compared with morphological images obtained by Scanning Electron Microscopy (generally the grains display a much better cce than intergrain regions), but also to give the electric field profile from one electrode to the other one in a "lateral" arrangement of the ion beam. IBIL, by supplying 2D maps of luminescence intensity at different wavelength, can give information about the presence of specific radiative recombination centers and their distribution in the material. Finally, a new technique called XBIC (X-ray Beam Induced Charge), which makes use of very collimated (to 0.1 m) x-ray beams from high energy electron synchrotrons, opens new ways to map cce with a less damaging radiation and with a better energy resolution. In this paper we resume recent and less recent work carried out by our group by using these techniques, a work that has been undertaken afterwards also by other research groups in the world. In particular, topics such as the better homogeneity obtained by "priming" and the effects of "light priming", together with a certain "complementarity" between IBIC and IBIL maps, giving evidence that radiative recombination centers along the grain boundaries or in damaged regions are important in affecting cce, will be presented and discussed in some details. The conclusion is that ion microscopy is a powerful and essentially unique method for the investigation of diamond and other semiconductor materials proposed for nuclear detection.

Trace elements in Gem-Quality Diamonds - Origin and evolution of diamond-forming fluid inclusions

NASA Astrophysics Data System (ADS)

Pearson, Graham; Krebs, Mandy; Stachel, Thomas; Woodland, Sarah; Chinn, Ingrid; Kong, Julie

2017-04-01

In the same way that melt inclusions in phenocrysts have expanded our idea of melt formation and evolution in basalts, studying fluids trapped in diamonds is providing important new constraints on the nature of diamond-forming fluids. Fibrous and cloudy diamonds trap a high but variable density of fluid inclusions and so have been extensively studied using major and trace element compositions. In contrast, constraining the nature of the diamond-forming fluid for high purity gem-quality diamonds has been restricted by the rarity of available high quality trace element data. This is due to the extremely low concentrations of impurities that gem diamonds contain - often in the ppt range. The recent discovery of fluids in gem diamonds showing similar major element chemistry to fluid-rich diamonds suggest that many diamonds may share a common spectrum of parental fluids. Here we test this idea further. Recent advances in analytical techniques, in particular the development of the "off-line" laser ablation pre-concentration approach, have allowed fully quantitative trace element data to be recovered from "fluid-poor", high quality gem diamonds. We present trace element data for gem diamonds from a variety of locations from Canada, S. Africa and Russia, containing either silicate or sulphide inclusions to examine possible paragenetic or genetic differences between fluids. REE abundance in the "gem" diamonds vary from 0.1 to 0.0001 x chondrite. To a first order, we observe the same spectrum of trace element compositions in the gem diamonds as that seen in fluid-rich "fibrous" diamonds, supporting a common origin for the fluids. REE patterns range from extremely flat (Ce/Yb)n 2.5 to 5 (commonly in sulphide-bearing diamonds) to >70, the latter having significantly greater inter-element HFSE/LILE fractionation. In general, the fluids from the sulphide-bearing diamonds are less REE-enriched than the silicate-bearing diamonds, but the ranges overlap significantly. The very large range in REE fractionation mimics very closely that produced in high pressure (5-6 GPa) experimental melts of CO2-H2O fluxed peridotite. Hence, the elemental characteristics of the fluids could be reconciled by the diamonds growing from such melts over a range of T and hence F, with the sulphide-bearing diamonds generally being produced by larger fraction (higher T) melts that have reacted less with their wall rocks. It is also possible that the less REE enriched fluids are consistent with derivation from more reduced CH4-bearing fluids that have lower solute capacity than oxidised fluids. This option is being evaluated.

Anxiety sensitivity in smokers with indicators of cardiovascular disease.

PubMed

Farris, Samantha G; Abrantes, Ana M

2017-09-01

There is growing recognition of the importance of understanding the nature of the associations between anxiety and cardiovascular disease (CVD), although limited research has examined mechanisms that may explain the anxiety-CVD link. Anxiety sensitivity (fear of anxiety-relevant somatic sensations) is a cognitive-affective risk factor implicated in the development of anxiety psychopathology and various behavioral risk factors for CVD, although has not been examined among individuals with CVD. Adult daily smokers (n = 619; 50.9% female; M age  = 44.0, SD = 13.67) completed an online survey that included the Anxiety Sensitivity Index-3 (ASI-3) and the Patient Health Questionnaire (PHQ). The presence of CVD was assessed via the presence of ≥1 of the following: heart attack, heart murmur, positive stress test, heart valve abnormality, angina, and heart failure. Smokers with CVD indicators (n = 66, 10.7%) had significantly higher scores on the ASI-3 (M = 33.5, SD = 22.15), relative to smokers without CVD (M = 22.0, SD = 17.92; Cohen's d = .57). Those with CVD were significantly more likely to have moderate or high anxiety sensitivity (66.7%) relative to those without CVD (49.4%). Physical and social concerns about the meaning of somatic sensations were common among smokers with CVD.

Isotopically Enriched C-13 Diamond Anvil as a Stress Sensor in High Pressure Experiments

NASA Astrophysics Data System (ADS)

Vohra, Yogesh; Qiu, Wei; Kondratyev, Andreiy; Velisavljevic, Nenad; Baker, Paul

2004-03-01

The conventional high pressure diamond anvils were modified by growing an isotopically pure C-13 diamond layer by microwave plasma chemical vapor deposition using methane/hydrogen/oxygen chemistry. The isotopically pure C-13 nature of the culet of the diamond anvil was confirmed by the Raman spectroscopy measurements. This isotopically engineered diamond anvil was used against a natural abundance diamond anvil for high pressure experiments in a diamond anvil cell. Spatial resolved Raman spectroscopy was used to measure the stress induced shift in the C-13 layer as well as the undelying C-12 layer to ultra high pressures. The observed shift and splitiing of the diamond first order Raman spectrum was correlated with the stress distribution in the diamond anvil cell. The experimental results will be compared with the finite element modeling results using NIKE-2D software in order to create a mathematical relationship between sets of the following parameters: vertical (z axis) distance; horizontal (r axis) distance; max shear stress, and pressure. The isotopically enriched diamond anvils offer unique opportunities to measure stress distribution in the diamond anvil cell devices.

Thin film silicon by a microwave plasma deposition technique: Growth and devices, and, interface effects in amorphous silicon/crystalline silicon solar cells

NASA Astrophysics Data System (ADS)

Jagannathan, Basanth

Thin film silicon (Si) was deposited by a microwave plasma CVD technique, employing double dilution of silane, for the growth of low hydrogen content Si films with a controllable microstructure on amorphous substrates at low temperatures (<400sp°C). The double dilution was achieved by using a Ar (He) carrier for silane and its subsequent dilution by Hsb2. Structural and electrical properties of the films have been investigated over a wide growth space (temperature, power, pressure and dilution). Amorphous Si films deposited by silane diluted in He showed a compact nature and a hydrogen content of ˜8 at.% with a photo/dark conductivity ratio of 10sp4. Thin film transistors (W/L = 500/25) fabricated on these films, showed an on/off ratio of ˜10sp6 and a low threshold voltage of 2.92 volts. Microcrystalline Si films with a high crystalline content (˜80%) were also prepared by this technique. Such films showed a dark conductivity ˜10sp{-6} S/cm, with a conduction activation energy of 0.49 eV. Film growth and properties have been compared for deposition in Ar and He carrier systems and growth models have been proposed. Low temperature junction formation by undoped thin film silicon was examined through a thin film silicon/p-type crystalline silicon heterojunctions. The thin film silicon layers were deposited by rf glow discharge, dc magnetron sputtering and microwave plasma CVD. The hetero-interface was identified by current transport analysis and high frequency capacitance methods as the key parameter controlling the photovoltaic (PV) response. The effect of the interface on the device properties (PV, junction, and carrier transport) was examined with respect to modifications created by chemical treatment, type of plasma species, their energy and film microstructure interacting with the substrate. Thermally stimulated capacitance was used to determine the interfacial trap parameters. Plasma deposition of thin film silicon on chemically clean c-Si created electron trapping sites while hole traps were seen when a thin oxide was present at the interface. Under optimized conditions, a 10.6% efficient cell (11.5% with SiOsb2 A/R) with an open circuit voltage of 0.55 volts and a short circuit current density of 30 mA/cmsp2 was fabricated.

Alluvial diamond resource potential and production capacity assessment of the Central African Republic

USGS Publications Warehouse

Chirico, Peter G.; Barthelemy, Francis; Ngbokoto, Francois A.

2010-01-01

In May of 2000, a meeting was convened in Kimberley, South Africa, and attended by representatives of the diamond industry and leaders of African governments to develop a certification process intended to assure that rough, exported diamonds were free of conflict concerns. This meeting was supported later in 2000 by the United Nations in a resolution adopted by the General Assembly. By 2002, the Kimberly Process Certification Scheme (KPCS) was ratified and signed by diamond-producing and diamond-importing countries. Over 70 countries were included as members of the KPCS at the end of 2007. To prevent trade in "conflict diamonds" while protecting legitimate trade, the KPCS requires that each country set up an internal system of controls to prevent conflict diamonds from entering any imported or exported shipments of rough diamonds. Every diamond or diamond shipment must be accompanied by a Kimberley Process (KP) certificate and be contained in tamper-proof packaging. The objective of this study was (1) to assess the naturally occurring endowment of diamonds in the Central African Republic (potential resources) based on geological evidence, previous studies, and recent field data and (2) to assess the diamond-production capacity and measure the intensity of mining activity. Several possible methods can be used to estimate the potential diamond resource. However, because there is generally a lack of sufficient and consistent data recording all diamond mining in the Central African Republic and because time to conduct fieldwork and accessibility to the diamond mining areas are limited, two different methodologies were used: the volume and grade approach and the content per kilometer approach. Estimates are that approximately 39,000,000 carats of alluvial diamonds remain in the eastern and western zones of the CAR combined. This amount is roughly twice the total amount of diamonds reportedly exported from the Central African Republic since 1931. Production capacity is calculated to be 840,000 carats per year, a number that is nearly twice the 450,000 carats per year reported annually by the Central African Republic. The difference in the two numbers reflects the lack of sufficient data on diamond resource grades, worker productivity, and the number and locations of sites being worked.

In-Situ Chemical Analyses of Mineral Inclusions in Diamonds in Kimberlitic Eclogites From Yakutia

NASA Astrophysics Data System (ADS)

ANAND, M.; MISRA, K. C.; TAYLOR, L. A.; SOBOLEV, N. V.

2001-12-01

Mineral inclusions in diamonds (DIs) are stated to provide P-T-X-t information regarding the formation of the diamonds and the nature of the upper mantle. In an endeavor to further understand the importance of diamonds and their DIs in relation to their host rocks, we have investigated several diamondiferous eclogites from Yakutia, first by HRXC tomography (Taylor et al., 2001, this meeting) and then by dissection of the eclogites into their individual minerals. The mineralogy of the host eclogite is presented by Misra et al. (2001, this meeting). Two of the diamondiferous eclogite xenoliths, although weighing but 66 g and 42 g, contain 74 and 47 macro-diamonds, resp. Based on HRXCT imaging, appropriate sections were selected in the eclogite to extract diamonds with minimum loss of material. In the majority of cases, diamonds occur as perfect octahedron with well developed crystal faces. In some cases, however, diamonds occur as macles (twinned xls). The size range of the diamonds is 1-6 mm. Optical examination reveals the sulfides as the most common DIs in these diamonds, followed by clinopyroxenes and garnets. Each diamond was cut and polished along relatively soft directions parallel to either (001) or (110) faces so as to expose DIs for in-situ analyses. Examination by cathodoluminescence (CL) on an EMP demonstrated that the majority of the diamonds have minute, optically invisible, cracks from the DIs to the surfaces of the diamonds - i.e., the possibility of an open system. These diamonds show complicated growth histories and contain DIs that are in some cases, found to be associated with secondary alteration. In addition, the DIs in each diamond, examined in-situ are of different composition from the host and different from DIs in other diamonds, a relationship reported earlier (Taylor et al., 2000, Int'l Geol Rev). These observations raise serious doubts about the significance of DIs and the pristinity and syngenesis of DIs removed by the typical diamond~crushing procedure. Therefore, extreme caution must be taken when interpreting any of the P-T-X-t conditions of diamond growth, based on DIs.

Genesis of diamond inclusions: An integrated cathodoluminescence (CL) and Electron backscatter diffraction (EBSD) study on eclogitic and peridotitic inclusions and their diamond host.

NASA Astrophysics Data System (ADS)

van den Heuvel, Quint; Matveev, Sergei; Drury, Martyn; Gress, Michael; Chinn, Ingrid; Davies, Gareth

2017-04-01

Diamond inclusions are potentially fundamental to understanding the formation conditions of diamond and the volatile cycles in the deep mantle. In order to fully understand the implications of the compositional information recorded by inclusions it is vital to know whether the inclusions are proto-, syn-, or epigenetic and the extent to which they have equilibrated with diamond forming fluids. In previous studies, the widespread assumption was made that the majority of diamond inclusions are syngenetic, based upon observation of cubo-octahedral morphology imposed on the inclusions. Recent work has reported the crystallographic relationship between inclusions and the host diamond to be highly complex and the lack of crystallographic relationships between inclusions and diamonds has led some to question the significance of imposed cubo-octahedral morphology. This study presents an integrated EBSD and CL study of 9 diamonds containing 20 pyropes, 2 diopsides, 1 forsterite and 1 rutile from the Jwaneng and Letlhakane kimberlite clusters, Botswana. A new method was developed to analyze the crystallographic orientation of the host diamond and the inclusions with EBSD. Diamonds plates were sequentially polished to expose inclusions at different levels in the diamond. CL imaging at different depths was performed in order to produce a 3D view of diamond growth zones around the inclusions. Standard diamond polishing techniques proved too aggressive for silicate inclusions as they were damaged to such a degree that EBSD measurements on the inclusions were impossible. The inclusions were milled with a Ga+ focused ion beam (FIB) at a 12° angle to clean the surface for EBSD measurements. Of the 24 inclusions, 9 have an imposed cubo-octahedral morphology. Of these inclusions, 6 have faces orientated parallel to diamond growth zones and/or appear to have nucleated on a diamond growth surface, implying syngenesis. In contrast, other diamonds record resorption events such that inclusions now cut diamond growth zones. In most cases, the growth zonation around inclusions is not well defined due to CL haloes but some inclusions clearly disrupt diamond growth. Crystallographic orientations of diamond and the inclusions, determined using EBSD, revealed that each inclusion has a homogeneous orientation and record no compositional zonation. The diamonds also showed no angular deviations despite many having multiple growth and resorption zones; implying epitaxial growth of diamond. Crystallographic alignment between diamond and inclusions was not recorded for the principle planes and limited to 3 possible coincidences on minor planes from the 24 inclusions studied. The CL data show no evidence of syngenesis for these 3 inclusions. Analyses of two diamonds with inclusion clusters in different growth zones, 400 µm apart, revealed the same chemical composition and orientation, potentially implying they originated from an original larger inclusion. Combined EBSD and CL data suggest that there is no direct orientational correlation (epitaxial growth) between silicate inclusions and the host diamond, even when the mineral phases are of the same symmetry group. The presentation will provide a detailed evaluation of the genesis of individual inclusions.

The MIT HEDP Accelerator Facility for education and advanced diagnostics development for OMEGA, Z and the NIF

NASA Astrophysics Data System (ADS)

Petrasso, R.; Gatu Johnson, M.; Armstrong, E.; Han, H. W.; Kabadi, N.; Lahmann, B.; Orozco, D.; Rojas Herrera, J.; Sio, H.; Sutcliffe, G.; Frenje, J.; Li, C. K.; Séguin, F. H.; Leeper, R.; Ruiz, C. L.; Sangster, T. C.

2015-11-01

The MIT HEDP Accelerator Facility utilizes a 135-keV linear electrostatic ion accelerator, a D-T neutron source and two x-ray sources for development and characterization of nuclear diagnostics for OMEGA, Z, and the NIF. The ion accelerator generates D-D and D-3He fusion products through acceleration of D ions onto a 3He-doped Erbium-Deuteride target. Fusion reaction rates around 106 s-1 are routinely achieved, and fluence and energy of the fusion products have been accurately characterized. The D-T neutron source generates up to 6 × 108 neutrons/s. The two x-ray generators produce spectra with peak energies of 35 keV and 225 keV and maximum dose rates of 0.5 Gy/min and 12 Gy/min, respectively. Diagnostics developed and calibrated at this facility include CR-39 based charged-particle spectrometers, neutron detectors, and the particle Time-Of-Flight (pTOF) and Magnetic PTOF CVD-diamond-based bang time detectors. The accelerator is also a vital tool in the education of graduate and undergraduate students at MIT. This work was supported in part by SNL, DOE, LLE and LLNL.

NASA Tech Briefs, June 2007

NASA Technical Reports Server (NTRS)

2007-01-01

Topics covered include: High-Accuracy, High-Dynamic-Range Phase-Measurement System; Simple, Compact, Safe Impact Tester; Multi-Antenna Radar Systems for Doppler Rain Measurements; 600-GHz Electronically Tunable Vector Measurement System; Modular Architecture for the Measurement of Space Radiation; VLSI Design of a Turbo Decoder; Architecture of an Autonomous Radio Receiver; Improved On-Chip Measurement of Delay in an FPGA or ASIC; Resource Selection and Ranking; Accident/Mishap Investigation System; Simplified Identification of mRNA or DNA in Whole Cells; Printed Multi-Turn Loop Antennas for RF Biotelemetry; Making Ternary Quantum Dots From Single-Source Precursors; Improved Single-Source Precursors for Solar-Cell Absorbers; Spray CVD for Making Solar-Cell Absorber Layers; Glass/BNNT Composite for Sealing Solid Oxide Fuel Cells; A Method of Assembling Compact Coherent Fiber-Optic Bundles; Manufacturing Diamond Under Very High Pressure; Ring-Resonator/Sol-Gel Interferometric Immunosensor; Compact Fuel-Cell System Would Consume Neat Methanol; Algorithm Would Enable Robots to Solve Problems Creatively; Hypothetical Scenario Generator for Fault-Tolerant Diagnosis; Smart Data Node in the Sky; Pseudo-Waypoint Guidance for Proximity Spacecraft Maneuvers; Update on Controlling Herds of Cooperative Robots; and Simulation and Testing of Maneuvering of a Planetary Rover.

Crystal-proven Gout and Characteristic Gout Severity Factors are Associated with Cardiovascular Disease.

PubMed

Disveld, Iris J M; Fransen, Jaap; Rongen, Gerard A; Kienhorst, Laura B E; Zoakman, Sahel; Janssens, Hein J E M; Janssen, Matthijs

2018-04-15

Our aim was to examine the prevalence of cardiovascular disease (CVD) in patients with crystal-proven gout compared to arthritis controls. Further, we analyzed the association between characteristic gout severity factors and CVD to provide further support for a pathogenetic relationship between gout and CVD. Patients with arthritis referred for diagnosis were consecutively included in the Gout Arnhem-Liemers cohort. Joint fluid analysis was performed in all referred patients; controls were negative for crystals. Patients' characteristics and different manifestations of CVD and gout severity factors (disease duration, attack frequency, tophi, affected joints, high serum urate acid level, joint damage) were collected. Gout patients were compared with controls for the prevalence of CVD. In addition, the association between characteristic gout severity factors and presence of CVD was analyzed. Data from 700 gout patients and 276 controls were collected. CVD was present in 47% (95% CI 44%-51%) and 24% (95% CI 19%-29%) of gout patients and controls, respectively. Corrected for confounders, gout was still strongly associated with an increased prevalence of CVD compared to controls (OR 3.39, 95% CI 2.37-4.84). In patients with gout, disease duration ≥ 2 years, oligo- or polyarthritis, serum urate acid > 0.55 mmol/l at presentation, and joint damage were independently (p < 0.05) associated with prevalent CVD. Crystal-proven gout was strongly associated with an increased prevalence of CVD. In patients with gout, characteristic gout severity factors were associated with CVD.

Density of calcium in the ascending thoracic aorta and risk of incident cardiovascular disease events.

PubMed

Thomas, Isac C; McClelland, Robyn L; Michos, Erin D; Allison, Matthew A; Forbang, Nketi I; Longstreth, W T; Post, Wendy S; Wong, Nathan D; Budoff, Matthew J; Criqui, Michael H

2017-10-01

The volume and density of coronary artery calcium (CAC) both independently predict cardiovascular disease (CVD) beyond standard risk factors, with CAC density inversely associated with incident CVD after accounting for CAC volume. We tested the hypothesis that ascending thoracic aorta calcium (ATAC) volume and density predict incident CVD events independently of CAC. The Multi-Ethnic Study of Atherosclerosis (MESA) is a prospective cohort study of participants without clinical CVD at baseline. ATAC and CAC were measured from baseline cardiac computed tomography (CT). Cox regression models were used to estimate the associations of ATAC volume and density with incident coronary heart disease (CHD) events and CVD events, after adjustment for standard CVD risk factors and CAC volume and density. Among 6811 participants, 234 (3.4%) had prevalent ATAC and 3395 (49.8%) had prevalent CAC. Over 10.3 years, 355 CHD and 562 CVD events occurred. One-standard deviation higher ATAC density was associated with a lower risk of CHD (HR 0.48 [95% CI 0.29-0.79], p<0.01) and CVD (HR 0.56 [0.37-0.84], p<0.01) after full adjustment. ATAC volume was not associated with outcomes after full adjustment. ATAC was uncommon in a cohort free of clinical CVD at baseline. However, ATAC density was inversely associated with incident CHD and CVD after adjustment for CVD risk factors and CAC volume and density. Copyright © 2017 Elsevier B.V. All rights reserved.

Mortality from cardiovascular diseases in Bavi District, Vietnam.

PubMed

Minh, Hoang Van; Byass, Peter; Wall, Stig

2003-01-01

Like other developing countries, Vietnam is undergoing epidemiological transition, which is characterized by many changes in terms of morbidity and mortality patterns. The fact that cardiovascular diseases (CVD) are leading causes of death in hospitals in the whole country was ascertained from annual statistics. However, the magnitude of the burden of mortality from CVD at the community level remained unknown. The aims of the study were to outline CVD mortality during health transition in a rural community in the north of Vietnam and to examine associations between CVD mortality and the socioeconomic status of the population. Within an established demographic surveillance system (DSS), verbal autopsy (VA) was used to identify the burden of mortality from CVD. Cohort analysis was used in this study to measure associations between CVD mortality and socioeconomic determinants. CVD emerged as a leading cause of death in the study area, accounting for more than infectious and parasitic diseases combined. CVD killed many people among the most economically productive age group, both men and women, in all socioeconomic groups. Occupational status was shown to be significantly associated with CVD mortality. Already at this point in the epidemiological transition, there is evidence of a substantial burden of CVD in rural Vietnam. Although this study was not able to show trends, the current situation is a cause for concern in health policy and planning. Verbal autopsy methods and CVD risk factor evaluations will form important parts of future research agendas.

X-Ray Tomography of Diamondiferous Eclogites: Clues to the Origin of Diamonds.

NASA Astrophysics Data System (ADS)

Taylor, L. A.; Ketcham, R. A.

2009-05-01

During the last decade or so, considerable new and significant data have been gathered concerning the origin of diamonds. This has come from the mantle xenoliths that are the rocks in which the diamonds originated, namely eclogites and peridotites, the host rocks for diamonds in the mantle. Upon rising through the crust to the surface in their kimberlite magmatic carriers and subsequent weathering on the surface, the weak olivine commonly alters, thereby reducing the crushing strength of the peridotite xenoliths. However, the eclogite xenoliths often retain enough toughness to resist total shattering after initial crushing during diamond recovery process. Subjecting these eclogite nodules to X-rays (e.g., 1.54 Å Cu K) can reveal the bright-blue fluorescence of any diamonds exposed at the surface of the xenoliths. Slow and careful extraction can result in recovery of large diamonds. Many of these unique rocks are the ones upon which we have performed High- Resolution X-ray Computed Tomography (HRXCT) at UT Austin. These data have formed the basis for further eclogite dissections and diamond polishing at UT Knoxville. The size of the diamondiferous eclogites that were scanned by HRXCT are from 20 g to 8.8 kg, all with many diamonds ranging from <1 mm to >1 cm, most octahedral, several with mineral inclusions. These diamondiferous eclogites have both textures and fabrics that provide evidence indicating the secondary formation of the diamonds. These include lineations of diamonds along zones of metasomatic alteration, former zones of enhanced permeability; the non-association of sulfides (po, pn, cpy) with the diamonds, versus sulfide-immiscible melt for the diamond origin; lack of any diamonds in direct contact with the primary garnets or clinopyroxenes; and the presence of some dodecahedral diamonds, indicative of resorption processes, typically attributed to the kimberlite melt. Indeed, these eclogites are not igneous in origin, but metamorphic products of their subducted oceanic crustal protoliths. In addition, detailed studies of the extracted diamonds supply more unexpected results. Polished diamonds examined with cathodoluminescence show evidence for a torturous life of cubic nucleation, growth, resorption, octahedral growth, resorption, and even plastic deformation. These are anomalous observations of diamonds supposedly formed along with the primary minerals in their eclogite hosts. The mineral inclusions in the diamonds reveal additional compelling clues of their origin. Multiple clinopyroxene inclusions can have different compositions within a single diamond, different between diamonds, and even different from that of the host. It is proposed that diamonds present in mantle eclogite xenoliths are secondary, having little to do with their hosts, formed by metasomatic fluids penetrating the eclogites along zones of permeability, and causing extensive secondary alteration and even partial melting of the primary garnets and omphacites.

Equations of state and pressure dependence of bulk modulus for aggregated diamond nanorods

NASA Astrophysics Data System (ADS)

Patel, G. R.; Thakar, N. A.; Pandya, T. C.

2018-04-01

In the present paper study of the high pressure behaviour of aggregated diamond nanorods (ADNRs) and diamond have been carried out. A comparative study of different equations of state is discussed to understand the high pressure behaviour of diamond and the aggregated diamond nanorods. In the present study the usual Tait's equation of state has been modified to predict the high pressure behaviour of carbon material ADNRs and diamond. The results obtained in the present study are compared with available experimental evidences. Bulk moduli as a function of pressure are also computed for ADNRs and natural diamond in the light of recent investigations. Present study reveals that ADNRs are less compressible than diamond.

Saturated Fatty Acids and Cardiovascular Disease: Replacements for Saturated Fat to Reduce Cardiovascular Risk

PubMed Central

Briggs, Michelle A.; Petersen, Kristina S.; Kris-Etherton, Penny M.

2017-01-01

Dietary recommendations to decrease the risk of cardiovascular disease (CVD) have focused on reducing intake of saturated fatty acids (SFA) for more than 50 years. While the 2015–2020 Dietary Guidelines for Americans advise substituting both monounsaturated and polyunsaturated fatty acids for SFA, evidence supports other nutrient substitutions that will also reduce CVD risk. For example, replacing SFA with whole grains, but not refined carbohydrates, reduces CVD risk. Replacing SFA with protein, especially plant protein, may also reduce CVD risk. While dairy fat (milk, cheese) is associated with a slightly lower CVD risk compared to meat, dairy fat results in a significantly greater CVD risk relative to unsaturated fatty acids. As research continues, we will refine our understanding of dietary patterns associated with lower CVD risk. PMID:28635680

Electron emission from diamond films seeded using kitchen-wrap polyethylene

NASA Astrophysics Data System (ADS)

Varshney, D.; Makarov, V. I.; Saxena, P.; Guinel, M. J. F.; Kumar, A.; Scott, J. F.; Weiner, B. R.; Morell, G.

2011-03-01

Diamond has many potential electronic applications, but the diamond seeding methods are generally harsh on the substrates rendering them unsuitable for integration in electronics. We report a non-abrasive, scalable and economic process of diamond film seeding using kitchen-wrap polyethylene employing hot filament chemical vapour reaction of H2S/CH4/H2 gas mixtures on Cu substrates. The fabricated diamond films were characterized with scanning electron microscopy, transmission electron microscopy and Raman spectroscopy, which confirm that the deposited film consists of a microcrystalline diamond of size in the range 0.5-1.0 µm. The synthesized diamond films exhibit a turn-on field of about 8.5 V µm-1 and long-term stability. Diamond film synthesis using polyethylene will enable the integration of diamond heat sinks into high-power and high-temperature electronic devices.

Cardiovascular Disease is Associated with COPD Severity and Reduced Functional Status and Quality of Life

PubMed Central

Black-Shinn, Jennifer L.; Kinney, Gregory L.; Wise, Anastasia L.; Regan, Elizabeth A.; Make, Barry; Krantz, Mori J.; Barr, R. Graham; Murphy, James R.; Lynch, David; Silverman, Edwin K.; Crapo, James D.; Hokanson, John E.

2015-01-01

Introduction Smoking is a major risk factor for both cardiovascular disease (CVD) and chronic obstructive pulmonary disease (COPD). More individuals with COPD die from CVD than respiratory causes and the risk of developing CVD appears to be independent of smoking burden. Although CVD is a common comorbid condition within COPD, the nature of its relationships to COPD affection status and severity, and functional status is not well understood. Methods The first 2,500 members of the COPDGene cohort were evaluated. Subjects were current and former smokers with a minimum 10 pack year history of cigarette smoking. COPD was defined by spirometry as an FEV1/FVC < lower limit of normal (LLN) with further identification of severity by FEV1 percent of predicted (GOLD stages 2, 3, and 4) for the main analysis. The presence of physician-diagnosed self-reported CVD was determined from a medical history questionnaire administered by a trained staff member. Results A total of 384 (15%) had pre-existing CVD. Self-reported CVD was independently related to COPD (Odds Ratio=1.61, 95% CI=1.18–2.20, p=0.01) after adjustment for covariates with CHF having the greatest association with COPD. Within subjects with COPD, pre-existing self-reported CVD placed subjects at greater risk of hospitalization due to exacerbation, higher BODE index, and greater St. George’s questionnaire score. The presence of self-reported CVD was associated with a shorter six-minute walk distance in those with COPD (p<0.05). Conclusions Self-reported CVD was independently related to COPD with presence of both self-reported CVD and COPD associated with a markedly reduced functional status and reduced quality of life. Identification of CVD in those with COPD is an important consideration in determining functional status. PMID:24831864

Racial disparities in age at time of cardiovascular events and cardiovascular-related death in patients with systemic lupus erythematosus.

PubMed

Scalzi, Lisabeth V; Hollenbeak, Christopher S; Wang, Li

2010-09-01

To determine whether racial disparities exist with regard to the age at which patients with systemic lupus erythematosus (SLE) experience cardiovascular disease (CVD) and CVD-associated death. Using the 2003-2006 Nationwide Inpatient Sample, we calculated the age difference between patients with SLE and their race- and sex-matched controls at the time of hospitalization for a cardiovascular event and for CVD-associated death. In addition, we calculated the age difference between white patients with SLE and sex-matched controls for each minority group for the same outcomes. The mean age difference between women with and those without SLE at the time of admission for a CVD event was 10.5 years. All age differences between women with SLE (n = 3,627) and women without SLE admitted for CVD were significant (P < 0.0001). Among different racial groups with SLE, black women were the youngest to be admitted with CVD (53.9 years) and to have a CVD-associated in-hospital death (52.8 years; n = 218). Black women with SLE were 19.8 years younger than race- and sex-matched controls at the time of CVD-associated death. Admission trends for CVD were reversed for black women, such that the highest proportions of these patients were admitted before age 55 years, and then the proportions steadily decreased across age categories. Among the 805 men with SLE who were admitted with a CVD event, those who were black or Hispanic were youngest. There are significant racial disparities with regard to age at the time of hospital admission for CVD events and CVD-related hospitalization resulting in death in patients with SLE.

Challenges of developing a cardiovascular risk calculator for patients with rheumatoid arthritis.

PubMed

Crowson, Cynthia S; Rollefstad, Silvia; Kitas, George D; van Riel, Piet L C M; Gabriel, Sherine E; Semb, Anne Grete

2017-01-01

Cardiovascular disease (CVD) risk calculators designed for use in the general population do not accurately predict the risk of CVD among patients with rheumatoid arthritis (RA), who are at increased risk of CVD. The process of developing risk prediction models involves numerous issues. Our goal was to develop a CVD risk calculator for patients with RA. Thirteen cohorts of patients with RA originating from 10 different countries (UK, Norway, Netherlands, USA, Sweden, Greece, South Africa, Spain, Canada and Mexico) were combined. CVD risk factors and RA characteristics at baseline, in addition to information on CVD outcomes were collected. Cox models were used to develop a CVD risk calculator, considering traditional CVD risk factors and RA characteristics. Model performance was assessed using measures of discrimination and calibration with 10-fold cross-validation. A total of 5638 RA patients without prior CVD were included (mean age: 55 [SD: 14] years, 76% female). During a mean follow-up of 5.8 years (30139 person years), 389 patients developed a CVD event. Event rates varied between cohorts, necessitating inclusion of high and low risk strata in the models. The multivariable analyses revealed 2 risk prediction models including either a disease activity score including a 28 joint count and erythrocyte sedimentation rate (DAS28ESR) or a health assessment questionnaire (HAQ) along with age, sex, presence of hypertension, current smoking and ratio of total cholesterol to high-density lipoprotein cholesterol. Unfortunately, performance of these models was similar to general population CVD risk calculators. Efforts to develop a specific CVD risk calculator for patients with RA yielded 2 potential models including RA disease characteristics, but neither demonstrated improved performance compared to risk calculators designed for use in the general population. Challenges encountered and lessons learned are discussed in detail.