Enhancement and restoration of non-uniform illuminated Fundus Image of Retina obtained through thin layer of cataract.

PubMed

Mitra, Anirban; Roy, Sudipta; Roy, Somais; Setua, Sanjit Kumar

2018-03-01

Retinal fundus images are extensively used in manually or without human intervention to identify and analyze various diseases. Due to the comprehensive imaging arrangement, there is a large radiance, reflectance and contrast inconsistency within and across images. A novel method is proposed based on the cataract physical model to reduce the generated blurriness of the fundus image at the time of image acquisition through the thin layer of cataract by the fundus camera. After the blurriness reduction the method is proposed the enhancement procedure of the images with an objective on contrast perfection with no preamble of artifacts. Due to the uneven distribution of thickness of the cataract, the cataract surroundings are first predicted in the domain of frequency. Second, the resultant image of first step enhanced by the intensity histogram equalization in the adapted Hue Saturation Intensity (HSI) color image space such as the gamut problem can be avoided. The concluding image with suitable color and disparity is acquired by using the proposed max-min color correction approach. The result indicates that not only the proposed method can more effectively enhanced the non-uniform image of retina obtain through thin layer of cataract, but also the resulting image show appropriate brightness and saturation and maintain complete color space information. The projected enhancement method has been tested on the openly available datasets and the result evaluated with the standard used image enhancement algorithms and the cataract removal method. Results show noticeable development over existing methods. Cataract often prevents the clinician from objectively evaluating fundus feature. Cataract also affect subjective test. Enhancement and restoration of non-uniform illuminated Fundus Image of Retina obtained through thin layer of Cataract has shown here to be potentially beneficial. Copyright © 2018 Elsevier B.V. All rights reserved.

Fuel cell with interdigitated porous flow-field

DOEpatents

Wilson, Mahlon S.

1997-01-01

A polymer electrolyte membrane (PEM) fuel cell is formed with an improved system for distributing gaseous reactants to the membrane surface. A PEM fuel cell has an ionic transport membrane with opposed catalytic surfaces formed thereon and separates gaseous reactants that undergo reactions at the catalytic surfaces of the membrane. The fuel cell may also include a thin gas diffusion layer having first and second sides with a first side contacting at least one of the catalytic surfaces. A macroporous flow-field with interdigitated inlet and outlet reactant channels contacts the second side of the thin gas diffusion layer for distributing one of the gaseous reactants over the thin gas diffusion layer for transport to an adjacent one of the catalytic surfaces of the membrane. The porous flow field may be formed from a hydrophilic material and provides uniform support across the backside of the electrode assembly to facilitate the use of thin backing layers.

Fuel cell with interdigitated porous flow-field

DOEpatents

Wilson, M.S.

1997-06-24

A polymer electrolyte membrane (PEM) fuel cell is formed with an improved system for distributing gaseous reactants to the membrane surface. A PEM fuel cell has an ionic transport membrane with opposed catalytic surfaces formed thereon and separates gaseous reactants that undergo reactions at the catalytic surfaces of the membrane. The fuel cell may also include a thin gas diffusion layer having first and second sides with a first side contacting at least one of the catalytic surfaces. A macroporous flow-field with interdigitated inlet and outlet reactant channels contacts the second side of the thin gas diffusion layer for distributing one of the gaseous reactants over the thin gas diffusion layer for transport to an adjacent one of the catalytic surfaces of the membrane. The porous flow field may be formed from a hydrophilic material and provides uniform support across the backside of the electrode assembly to facilitate the use of thin backing layers. 9 figs.

Characterisation of well-adhered ZrO2 layers produced on structured reactors using the sonochemical sol-gel method

NASA Astrophysics Data System (ADS)

Jodłowski, Przemysław J.; Chlebda, Damian K.; Jędrzejczyk, Roman J.; Dziedzicka, Anna; Kuterasiński, Łukasz; Sitarz, Maciej

2018-01-01

The aim of this study was to obtain thin zirconium dioxide coatings on structured reactors using the sonochemical sol-gel method. The preparation method of metal oxide layers on metallic structures was based on the synergistic combination of three approaches: the application of ultrasonic irradiation during the synthesis of Zr sol-gel based on a precursor solution containing zirconium(IV) n-propoxide, the addition of stabilszing agents, and the deposition of ZrO2 on the metallic structures using the dip-coating method. As a result, dense, uniform zirconium dioxide films were obtained on the FeCrAlloy supports. The structured reactors were characterised by various physicochemical methods, such as BET, AFM, EDX, XRF, XRD, XPS and in situ Raman spectroscopy. The results of the structural analysis by Raman and XPS spectroscopy confirmed that the metallic surface was covered by a ZrO2 layer without any impurities. SEM/EDX mapping revealed that the deposited ZrO2 covered the metallic support uniformly. The mechanical and high temperature tests showed that the developed ultrasound assisted sol-gel method is an efficient way to obtain thin, well-adhered zirconium dioxide layers on the structured reactors. The prepared metallic supports covered with thin ZrO2 layers may be a good alternative to layered structured reactors in several dynamics flow processes, for example for gas exhaust abatement.

Multilayer Ferritin Array for Bionanobattery

NASA Technical Reports Server (NTRS)

Chu, Sang-Hyon (Inventor); Choi, Sang H. (Inventor); Kim, Jae-Woo (Inventor); Lillehei, Peter T. (Inventor); Park, Yeonjoon (Inventor); King, Glen C. (Inventor); Elliott, James R., Jr. (Inventor)

2009-01-01

A thin-film electrode for a bio-nanobattery is produced by consecutively depositing arrays of a ferritin protein on a substrate, employing a spin self-assembly procedure. By this procedure, a first ferritin layer is first formed on the substrate, followed by building a second, oppositely-charged ferritin layer on the top of the first ferritin layer to form a bilayer structure. Oppositely-charged ferritin layers are subsequently deposited on top of each other until a desired number of bilayer structures is produced. An ordered, uniform, stable and robust, thin-film electrode material of enhanced packing density is presented, which provides optimal charge density for the bio-nanobattery.

Ultra-thin, single-layer polarization rotator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, T. V.; Truong, V. V., E-mail: Truong.Vo-Van@Concordia.Ca; Do, P. A.

We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 10{sup 3} when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

An Iterative Method for Problems with Multiscale Conductivity

PubMed Central

Kim, Hyea Hyun; Minhas, Atul S.; Woo, Eung Je

2012-01-01

A model with its conductivity varying highly across a very thin layer will be considered. It is related to a stable phantom model, which is invented to generate a certain apparent conductivity inside a region surrounded by a thin cylinder with holes. The thin cylinder is an insulator and both inside and outside the thin cylinderare filled with the same saline. The injected current can enter only through the holes adopted to the thin cylinder. The model has a high contrast of conductivity discontinuity across the thin cylinder and the thickness of the layer and the size of holes are very small compared to the domain of the model problem. Numerical methods for such a model require a very fine mesh near the thin layer to resolve the conductivity discontinuity. In this work, an efficient numerical method for such a model problem is proposed by employing a uniform mesh, which need not resolve the conductivity discontinuity. The discrete problem is then solved by an iterative method, where the solution is improved by solving a simple discrete problem with a uniform conductivity. At each iteration, the right-hand side is updated by integrating the previous iterate over the thin cylinder. This process results in a certain smoothing effect on microscopic structures and our discrete model can provide a more practical tool for simulating the apparent conductivity. The convergence of the iterative method is analyzed regarding the contrast in the conductivity and the relative thickness of the layer. In numerical experiments, solutions of our method are compared to reference solutions obtained from COMSOL, where very fine meshes are used to resolve the conductivity discontinuity in the model. Errors of the voltage in L2 norm follow O(h) asymptotically and the current density matches quitewell those from the reference solution for a sufficiently small mesh size h. The experimental results present a promising feature of our approach for simulating the apparent conductivity related to changes in microscopic cellular structures. PMID:23304238

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

NASA Astrophysics Data System (ADS)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Miniature all-silica optical fiber pressure sensor with an ultrathin uniform diaphragm.

PubMed

Wang, Wenhui; Wu, Nan; Tian, Ye; Niezrecki, Christopher; Wang, Xingwei

2010-04-26

This paper presents an all-silica miniature optical fiber pressure/acoustic sensor based on the Fabry-Perot (FP) interferometric principle. The endface of the etched optical fiber tip and silica thin diaphragm on it form the FP structure. The uniform and thin silica diaphragm was fabricated by etching away the silicon substrate from a commercial silicon wafer that has a thermal oxide layer. The thin film was directly thermally bonded to the endface of the optical fiber thus creating the Fabry-Perot cavity. Thin films with a thickness from 1microm to 3microm have been bonded successfully. The sensor shows good linearity and hysteresis during measurement. A sensor with 0.75 microm-thick diaphragm thinned by post silica etching was demonstrated to have a sensitivity of 11 nm/kPa. The new sensor has great potential to be used as a non-intrusive pressure sensor in a variety of sensing applications.

Germanium layers grown by zone thermal crystallization from a discrete liquid source

NASA Astrophysics Data System (ADS)

Yatsenko, A. N.; Chebotarev, S. N.; Lozovskii, V. N.; Mohamed, A. A. A.; Erimeev, G. A.; Goncharova, L. M.; Varnavskaya, A. A.

2017-11-01

It is proposed and investigated a method for growing thin uniform germanium layers onto large silicon substrates. The technique uses the hexagonally arranged local sources filled with liquid germanium. Germanium evaporates on very close substrate and in these conditions the residual gases vapor pressure highly reduces. It is shown that to achieve uniformity of the deposited layer better than 97% the critical thickness of the vacuum zone must be equal to l cr = 1.2 mm for a hexagonal arranged system of round local sources with the radius of r = 0.75 mm and the distance between the sources of h = 0.5 mm.

Quantum efficiency as a device-physics interpretation tool for thin-film solar cells

NASA Astrophysics Data System (ADS)

Nagle, Timothy J.

2007-12-01

Thin-film solar cells made from CdTe and CIGS p-type absorbers are promising candidates for generating pollution-free electricity. The challenge faced by the thin-film photovoltaics (PV) community is to improve the electrical properties of devices, without straying from low-cost, industry-friendly techniques. This dissertation will focus on the use of quantum-efficiency (QE) measurements to deduce the device physics of thin-film devices, in the hope of improving electrical properties and efficiencies of PV materials. Photons which are absorbed, but not converted into electrical energy can modify the energy bands in the solar cell. Under illumination, photoconductivity in the CdS window layer can result in bands different from those in the dark. QE data presented here was taken under a variety of light-bias conditions. These results suggest that 0.10 sun of white-light bias incident on the CdS layer is usually sufficient to achieve accurate QE results. QE results are described by models based on carrier collection by drift and diffusion, and photon absorption. These models are sensitive to parameters such as carrier mobility and lifetime. Comparing calculated QE curves with experiments, it was determined that electron lifetimes in CdTe are less than 0.1 ns. Lifetime determinations also suggest that copper serves as a recombination center in CdTe. The spatial uniformity of QE results has been investigated with the LBIC apparatus, and several experiments are described which investigate cell uniformity. Electrical variations that occur in solar cells often occur in a nonuniform fashion, and can be detected with the LBIC apparatus. Studies discussed here include investigation of patterned deposition of Cu in back-contacts, the use of high-resistivity TCO layers to mitigate nonuniformity, optical effects, and local shunts. CdTe devices with transparent back contacts were also studied with LBIC, including those that received a strong bromine/dichrol/hydrazine (BDH) etch and those that received a weak bromine etch at the back contact. Back-side results showed improved uniformity in BDH-etched devices, attributed to better back contacts in these devices. In thin-absorber devices, the uniformity trend would likely extend to front-side measurements.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, David S.; Hietala, Vincent M.; Hohenwarter, Gert K. G.; Martens, Jon S.; Plut, Thomas A.; Tigges, Chris P.; Vawter, Gregory A.; Zipperian, Thomas E.

1994-10-25

A process for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO.sub.3 crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O.sub.3, followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry.

The threshold strength of laminar ceramics utilizing molar volume changes and porosity

NASA Astrophysics Data System (ADS)

Pontin, Michael Gene

It has been shown that uniformly spaced thin compressive layers within a ceramic body can arrest the propagation of an otherwise catastrophic crack, producing a threshold strength: a strength below which the probability of failure is zero. Previous work has shown that the threshold strength increases with both the magnitude of the compressive stress and the fracture toughness of the thin layer material, and finite element analysis predicts that the threshold strength can be further increased when the elastic modulus of the compressive layer is much smaller than the thicker layer. The current work describes several new approaches to increase the threshold strength of a laminar ceramic system. The initial method utilized a molar volume expansion within the thin layers, produced by the tetragonal-to-monoclinic phase transformation of unstabilized zirconia during cooling, in order to produce large compressive stresses within the thin layers. High threshold strengths were measured for this system, but they remained relatively constant as the zirconia content was increased. It was determined that microcracking produced during the transformation reduced the magnitude of the compressive stresses, but may also have served to reduce the modulus of the thin compressive layer, providing an additional strengthening mechanism. The second approach studied the addition of porosity to reduce the elastic modulus of the thin compressive layers. A new processing method was created and analyzed, in which thick layers of the laminate were fabricated by tape-casting, and then dip-coated into a slurry, containing rice starch, to create thin porous compressive layers upon densification. The effects of porosity on the residual compressive stress, elastic modulus, and fracture toughness of the thin layers were measured and calculated, and it was found that the elastic modulus mismatch between the thin and thick layers produced a large strengthening effect for volume fractions of porosity below a critical level. Specimens with greater volume fractions of porosity exhibited complete crack arrest, typically followed by non-catastrophic failure, as cracks initiating in adjacent thick layers coalesced by cracking or delamination along the thin porous layers.

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.

PubMed

Vangelista, Silvia; Cinquanta, Eugenio; Martella, Christian; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Mantovan, Roberto; Basset, Francesco Basso; Pezzoli, Fabio; Molle, Alessandro

2016-04-29

Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.

Layer-controllable graphene by plasma thinning and post-annealing

NASA Astrophysics Data System (ADS)

Zhang, Lufang; Feng, Shaopeng; Xiao, Shaoqing; Shen, Gang; Zhang, Xiumei; Nan, Haiyan; Gu, Xiaofeng; Ostrikov, Kostya (Ken)

2018-05-01

The electronic structure of graphene depends crucially on its layer number and therefore engineering the number of graphene's atomic stacking layers is of great importance for the preparation of graphene-based devices. In this paper, we demonstrated a relatively less invasive, high-throughput and uniform large-area plasma thinning of graphene based on direct bombardment effect of fast-moving ionic hydrogen or argon species. Any desired number of graphene layers including trilayer, bilayer and monolayer can be obtained. Structural changes of graphene layers are studied by optical microscopy, Raman spectroscopy and atomic force microscopy. Post annealing is adopted to self-heal the lattice defects induced by the ion bombardment effect. This plasma etching technique is efficient and compatible with semiconductor manufacturing processes, and may find important applications for graphene-based device fabrication.

Directed Self-Assembly on Photo-Crosslinked Polystyrene Sub-Layers: Nanopattern Uniformity and Orientation

PubMed Central

Koh, Haeng-Deog; Kim, Mi-Jeong

2016-01-01

A photo-crosslinked polystyrene (PS) thin film is investigated as a potential guiding sub-layer for polystyrene-block-poly (methyl methacrylate) block copolymer (BCP) cylindrical nanopattern formation via topographic directed self-assembly (DSA). When compared to a non-crosslinked PS brush sub-layer, the photo-crosslinked PS sub-layer provided longer correlation lengths of the BCP nanostructure, resulting in a highly uniform DSA nanopattern with a low number of BCP dislocation defects. Depending on the thickness of the sub-layer used, parallel or orthogonal orientations of DSA nanopattern arrays were obtained that covered the entire surface of patterned Si substrates, including both trench and mesa regions. The design of DSA sub-layers and guide patterns, such as hardening the sub-layer by photo-crosslinking, nano-structuring on mesas, the relation between trench/mesa width, and BCP equilibrium period, were explored with a view to developing defect-reduced DSA lithography technology. PMID:28773768

Leaping shampoo glides on a 500-nm-thick lubricating air layer

NASA Astrophysics Data System (ADS)

Li, Erqiang; Lee, Sanghyun; Marston, Jeremy; Bonito, Andrea; Thoroddsen, Sigurdur

2013-11-01

When a stream of shampoo is fed onto a pool in one's hand, a jet can leap sideways or rebound from the liquid surface in an intriguing phenomenon known as the Kaye effect. Earlier studies have debated whether non-Newtonian effects are the underlying cause of this phenomenon, making the jet glide on top of a shear-thinning liquid layer, or whether an entrained air layer is responsible. Herein we show unambiguously that the jet slides on a lubricating air layer [Lee et al., Phys. Rev. E 87, 061001 (2013)]. We identify this layer by looking through the pool liquid and observing its rupture into fine micro-bubbles. The resulting micro-bubble sizes suggest that the thickness of this air layer is around 500 nm. This thickness estimate is also supported by the tangential deceleration of the jet during the rebounding, with the shear stress within the thin air layer sufficient for the observed deceleration. Particle tracking within the jet shows uniform velocity, with no pronounced shear, which would be required for shear-thinning effects. The role of the surfactant may primarily be to stabilize the air film.

Fabrication of solid oxide fuel cell by electrochemical vapor deposition

DOEpatents

Brian, Riley; Szreders, Bernard E.

1989-01-01

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Achieving pattern uniformity in plasmonic lithography by spatial frequency selection

NASA Astrophysics Data System (ADS)

Liang, Gaofeng; Chen, Xi; Zhao, Qing; Guo, L. Jay

2018-01-01

The effects of the surface roughness of thin films and defects on photomasks are investigated in two representative plasmonic lithography systems: thin silver film-based superlens and multilayer-based hyperbolic metamaterial (HMM). Superlens can replicate arbitrary patterns because of its broad evanescent wave passband, which also makes it inherently vulnerable to the roughness of the thin film and imperfections of the mask. On the other hand, the HMM system has spatial frequency filtering characteristics and its pattern formation is based on interference, producing uniform and stable periodic patterns. In this work, we show that the HMM system is more immune to such imperfections due to its function of spatial frequency selection. The analyses are further verified by an interference lithography system incorporating the photoresist layer as an optical waveguide to improve the aspect ratio of the pattern. It is concluded that a system capable of spatial frequency selection is a powerful method to produce deep-subwavelength periodic patterns with high degree of uniformity and fidelity.

Applying a uniform layer of disinfectant by wiping.

PubMed

Cooper, D W

2000-01-01

Disinfection or sterilization often requires applying a film of liquid to a surface, frequently done by using a wiper as the applicator. The wiper must not only hold a convenient amount of liquid, it must deposit it readily and uniformly. Contact time is critical to disinfection efficacy. Evaporation can limit the contact time. To lengthen the contact time, thickly applied layers are generally preferred. The thickness of such layers can be determined by using dyes or other tracers, as long as the tracers do not significantly affect the liquid's surface tension and viscosity and thus do not affect the thickness of the applied layer. Alternatively, as done here, the thickness of the layer can be inferred from the weight loss of the wiper. Results are reported of experiments on thickness of the layers applied under various conditions. Near saturation, hydrophilic polyurethane foam wipers gave layers roughly 10 microns thick, somewhat less than expected from hydrodynamic theory, but more than knitted polyester or woven cotton. Wipers with large liquid holding capacity, refilled often, should produce more nearly uniform layers. Higher pressures increase saturation in the wiper, tending to thicken the layer, but higher pressures also force liquid from the interface, tending to thin the layer, so the net result could be thicker or thinner layers, and there is likely to be an optimal pressure.

High temperature superconductor step-edge Josephson junctions using Ti-Ca-Ba-Cu-O

DOEpatents

Ginley, D.S.; Hietala, V.M.; Hohenwarter, G.K.G.; Martens, J.S.; Plut, T.A.; Tigges, C.P.; Vawter, G.A.; Zipperian, T.E.

1994-10-25

A process is disclosed for formulating non-hysteretic and hysteretic Josephson junctions using HTS materials which results in junctions having the ability to operate at high temperatures while maintaining high uniformity and quality. The non-hysteretic Josephson junction is formed by step-etching a LaAlO[sub 3] crystal substrate and then depositing a thin film of TlCaBaCuO on the substrate, covering the step, and forming a grain boundary at the step and a subsequent Josephson junction. Once the non-hysteretic junction is formed the next step to form the hysteretic Josephson junction is to add capacitance to the system. In the current embodiment, this is accomplished by adding a thin dielectric layer, LaA1O[sub 3], followed by a cap layer of a normal metal where the cap layer is formed by first depositing a thin layer of titanium (Ti) followed by a layer of gold (Au). The dielectric layer and the normal metal cap are patterned to the desired geometry. 8 figs.

Thin films with disordered nanohole patterns for solar radiation absorbers

NASA Astrophysics Data System (ADS)

Fang, Xing; Lou, Minhan; Bao, Hua; Zhao, C. Y.

2015-06-01

The radiation absorption in thin films with three disordered nanohole patterns, i.e., random position, non-uniform radius, and amorphous pattern, are numerically investigated by finite-difference time-domain (FDTD) simulations. Disorder can alter the absorption spectra and has an impact on the broadband absorption performance. Compared to random position and non-uniform radius nanoholes, amorphous pattern can induce a much better integrated absorption. The power density spectra indicate that amorphous pattern nanoholes reduce the symmetry and provide more resonance modes that are desired for the broadband absorption. The application condition for amorphous pattern nanoholes shows that they are much more appropriate in absorption enhancement for weak absorption materials. Amorphous silicon thin films with disordered nanohole patterns are applied in solar radiation absorbers. Four configurations of thin films with different nanohole patterns show that interference between layers in absorbers will change the absorption performance. Therefore, it is necessary to optimize the whole radiation absorbers although single thin film with amorphous pattern nanohole has reached optimal absorption.

Shallow Water Propagation

DTIC Science & Technology

2014-09-30

improvements in single-scattering treatments at stair-step risers in approximations for range dependence; non-uniform depth gridding to treat thin layers...turns out for such problems that preserving accuracy requires conceptually splitting a stair- riser interface into two interfaces separated by a very

Laser damage properties of TiO{sub 2}/Al{sub 2}O{sub 3} thin films grown by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wei Yaowei; Liu Hao; Sheng Ouyang

2011-08-20

Research on thin film deposited by atomic layer deposition (ALD) for laser damage resistance is rare. In this paper, it has been used to deposit TiO{sub 2}/Al{sub 2}O{sub 3} films at 110 deg. C and 280 deg. C on fused silica and BK7 substrates. Microstructure of the thin films was investigated by x-ray diffraction. The laser-induced damage threshold (LIDT) of samples was measured by a damage test system. Damage morphology was studied under a Nomarski differential interference contrast microscope and further checked under an atomic force microscope. Multilayers deposited at different temperatures were compared. The results show that the filmsmore » deposited by ALD had better uniformity and transmission; in this paper, the uniformity is better than 99% over 100 mm {Phi} samples, and the transmission is more than 99.8% at 1064 nm. Deposition temperature affects the deposition rate and the thin film microstructure and further influences the LIDT of the thin films. As to the TiO{sub 2}/Al{sub 2}O{sub 3} films, the LIDTs were 6.73{+-}0.47 J/cm{sup 2} and 6.5{+-}0.46 J/cm{sup 2} at 110 deg. C on fused silica and BK7 substrates, respectively. The LIDTs at 110 deg. C are notably better than 280 deg. C.« less

Ecofriendly and Nonvacuum Electrostatic Spray-Assisted Vapor Deposition of Cu(In,Ga)(S,Se)2 Thin Film Solar Cells.

PubMed

Hossain, Md Anower; Wang, Mingqing; Choy, Kwang-Leong

2015-10-14

Chalcopyrite Cu(In,Ga)(S,Se)2 (CIGSSe) thin films have been deposited by a novel, nonvacuum, and cost-effective electrostatic spray-assisted vapor deposition (ESAVD) method. The generation of a fine aerosol of precursor solution, and their controlled deposition onto a molybdenum substrate, results in adherent, dense, and uniform Cu(In,Ga)S2 (CIGS) films. This is an essential tool to keep the interfacial area of thin film solar cells to a minimum value for efficient charge separation as it helps to achieve the desired surface smoothness uniformity for subsequent cadmium sulfide and window layer deposition. This nonvacuum aerosol based approach for making the CIGSSe film uses environmentally benign precursor solution, and it is cheaper for producing solar cells than that of the vacuum-based thin film solar technology. An optimized CIGSSe thin film solar cell with a device configuration of molybdenum-coated soda-lime glass substrate/CIGSSe/CdS/i-ZnO/AZO shows the photovoltaic (j-V) characteristics of Voc=0.518 V, jsc=28.79 mA cm(-2), fill factor=64.02%, and a promising power conversion efficiency of η=9.55% under simulated AM 1.5 100 mW cm(-2) illuminations, without the use of an antireflection layer. This demonstrates the potential of ESAVD deposition as a promising alternative approach for making thin film CIGSSe solar cells at a lower cost.

Electromagnetic shielding effectiveness of a thin silver layer deposited onto PET film via atmospheric pressure plasma reduction

NASA Astrophysics Data System (ADS)

Oh, Hyo-Jun; Dao, Van-Duong; Choi, Ho-Suk

2018-03-01

This study presents the first use of a plasma reduction reaction under atmospheric pressure to fabricate a thin silver layer on polyethylene terephthalate (PET) film without the use of toxic chemicals, high voltages, or an expensive vacuum apparatus. The developed film is applied to electromagnetic interference (EMI) shielding. After repeatedly depositing a silver layer through a plasma reduction reaction on PET, we can successfully fabricate a uniformly deposited thin silver layer. It was found that both the particle size and film thickness of thin silver layers fabricated at different AgNO3 concentrations increase with an increase in the concentration of AgNO3. However, the roughness of the thin silver layer decreases when increasing the concentration of AgNO3 from 100 to 500 mM, and the roughness increases with a further increase in the concentration of AgNO3. The EMI shielding effectiveness (SE) of the film is measured in the frequency range of 0.045 to 1 GHz. As a result of optimizing the electrical conductivity by measuring sheet resistance of the thin silver layer, the film fabricated from 500 mM AgNO3 exhibits the highest EMI SE among all fabricated films. The maximum values of the EMI SE are 60.490 dB at 0.1 GHz and 54.721 dB at 1.0 GHz with minimum sheet resistance of 0.244 Ω/□. Given that the proposed strategy is simple and effective, it is promising for fabricating various low-cost metal films with high EMI SE.

GPR monitoring for non-uniform infiltration through a high permeable gravel layer in the test sand box

NASA Astrophysics Data System (ADS)

Kuroda, Seiichiro; Ishii, Nobuyuki; Morii, Toshihiro

2017-04-01

Recently capillary barriers have been known as a method to protect subsurface regions against infiltration from soil surface. It has essentially non-uniform structure of permeability or soil physical property. To identify the function of the capillary barrier, the site-characterization technique for non-uniform soil moisture distribution and infiltration process is needed. We built a sand box in which a thin high-permeable gravel layer was embedded and conducted a infiltration test, including non-uniform flow of soil water induced by capillary barrier effects. We monitored this process by various types of GPR measurements, including time-lapsed soundings with multi-frequency antenna and transmission measurements like one using cross-borehole radar. Finally we will discuss the applicability of GPR for monitoring the phenomena around the capillary barrier of soil. This work has partially supported by JSPS Grant-in-aid Scientific Research program, No.16H02580.

Formation of ultra Si/Ti nano thin film for enhancing silicon solar cell efficiency

NASA Astrophysics Data System (ADS)

Adam, T.; Dhahi, T. S.; Mohammed, M.; Al-Hajj, A. M.; Hashim, U.

2017-10-01

An alternative electrical source has l has become the major quest of every researchers due to it numerous advantages and applications of power supply and as electronic devices are becoming more and more portable. A highly efficient power supply is become inevitable. Thus. in this study, present ultrasonic based assisted fabrication of electrochemical silicon-Titanium nano thin film by in-house simple technique, uniformly silicon Nano film was fabricated and etched with HF (40%): C2H5OH (99%):1:1, < 20 nm pore diameter of silicon was fabricated. The surface and morphology reveal that the method produce uniform nano silicon porous layer with smaller silicon pores with high etching efficiency. The silicon-Titanium integrated nano porous exhibited excellent observation properties with low reflection index ~ 1.1 compared to silicon alone thin film.

Single-walled carbon nanotubes coated with ZnO by atomic layer deposition

NASA Astrophysics Data System (ADS)

Pal, Partha P.; Gilshteyn, Evgenia; Jiang, Hua; Timmermans, Marina; Kaskela, Antti; Tolochko, Oleg V.; Kurochkin, Alexey V.; Karppinen, Maarit; Nisula, Mikko; Kauppinen, Esko I.; Nasibulin, Albert G.

2016-12-01

The possibility of ZnO deposition on the surface of single-walled carbon nanotubes (SWCNTs) with the help of an atomic layer deposition (ALD) technique was successfully demonstrated. The utilization of pristine SWCNTs as a support resulted in a non-uniform deposition of ZnO in the form of nanoparticles. To achieve uniform ZnO coating, the SWCNTs first needed to be functionalized by treating the samples in a controlled ozone atmosphere. The uniformly ZnO coated SWCNTs were used to fabricate UV sensing devices. An UV irradiation of the ZnO coated samples turned them from hydrophobic to hydrophilic behaviour. Furthermore, thin films of the ZnO coated SWCNTs allowed us switch p-type field effect transistors made of pristine SWCNTs to have ambipolar characteristics.

Single-walled carbon nanotubes coated with ZnO by atomic layer deposition.

PubMed

Pal, Partha P; Gilshteyn, Evgenia; Jiang, Hua; Timmermans, Marina; Kaskela, Antti; Tolochko, Oleg V; Karppinen, Maarit; Nisula, Mikko; Kauppinen, Esko I; Nasibulin, Albert G

2016-12-02

The possibility of ZnO deposition on the surface of single-walled carbon nanotubes (SWCNTs) with the help of an atomic layer deposition (ALD) technique was successfully demonstrated. The utilization of pristine SWCNTs as a support resulted in a non-uniform deposition of ZnO in the form of nanoparticles. To achieve uniform ZnO coating, the SWCNTs first needed to be functionalized by treating the samples in a controlled ozone atmosphere. The uniformly ZnO coated SWCNTs were used to fabricate UV sensing devices. An UV irradiation of the ZnO coated samples turned them from hydrophobic to hydrophilic behaviour. Furthermore, thin films of the ZnO coated SWCNTs allowed us switch p-type field effect transistors made of pristine SWCNTs to have ambipolar characteristics.

Thin transparent conducting films of cadmium stannate

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.

2001-01-01

A process for preparing thin Cd.sub.2 SnO.sub.4 films. The process comprises the steps of RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a first substrate; coating a second substrate with a CdS layer; contacting the Cd.sub.2 SnO.sub.4 layer with the CdS layer in a water- and oxygen-free environment and heating the first and second substrates and the Cd.sub.2 SnO.sub.4 and CdS layers to a temperature sufficient to induce crystallization of the Cd.sub.2 SnO.sub.4 layer into a uniform single-phase spinel-type structure, for a time sufficient to allow full crystallization of the Cd.sub.2 SnO.sub.4 layer at that temperature; cooling the first and second substrates to room temperature; and separating the first and second substrates and layers from each other. The process can be conducted at temperatures less than 600.degree. C., allowing the use of inexpensive soda lime glass substrates.

Fabrication of PVDF-based blend membrane with a thin hydrophilic deposition layer and a network structure supporting layer via the thermally induced phase separation followed by non-solvent induced phase separation process

NASA Astrophysics Data System (ADS)

Wu, Zhiguo; Cui, Zhenyu; Li, Tianyu; Qin, Shuhao; He, Benqiao; Han, Na; Li, Jianxin

2017-10-01

A simple strategy of thermally induced phase separation followed by non-solvent induced phase separation (TIPS-NIPS) is reported to fabricate poly (vinylidene fluoride) (PVDF)-based blend membrane. The dissolved poly (styrene-co-maleic anhydride) (SMA) in diluent prevents the crystallization of PVDF during the cooling process and deposites on the established PVDF matrix in the later extraction. Compared with traditional coating technique, this one-step TIPS-NIPS method can not only fabricate a supporting layer with an interconnected network structure even via solid-liquid phase separation of TIPS, but also form a uniform SMA skin layer approximately as thin as 200 nm via surface deposition of NIPS. Besides the better hydrophilicity, what's interesting is that the BSA rejection ratio increases from 48% to 94% with the increase of SMA, which indicates that the separation performance has improved. This strategy can be conveniently extended to the creation of firmly thin layer, surface functionalization and structure controllability of the membrane.

Homodyne detection of ferromagnetic resonance by a non-uniform radio-frequency excitation current

NASA Astrophysics Data System (ADS)

Ikebuchi, Tetsuya; Moriyama, Takahiro; Shiota, Yoichi; Ono, Teruo

2018-05-01

Ferromagnetic resonance (FMR) is one of the most popular techniques to characterize dynamic properties of ferromagnetic materials. Among various FMR measurement techniques, the homodyne FMR detection has been frequently used to characterize thin-film ferromagnetic multilayers owing to its high sensitivity. However, a drawback of this technique was considered to be the requirement for a structural inversion asymmetry, which makes it unsuitable to characterize a single layer of ferromagnet. In this study, we demonstrate a homodyne FMR detection of the Kittel’s mode FMR dynamics of a single layer of FeNi by creating a non-uniform radio-frequency excitation current.

A mechanism for hot-spot generation in a reactive two-dimensional sheared viscous layer

NASA Astrophysics Data System (ADS)

Timms, Robert; Purvis, Richard; Curtis, John P.

2018-05-01

A two-dimensional model for the non-uniform melting of a thin sheared viscous layer is developed. An asymptotic solution is presented for both a non-reactive and a reactive material. It is shown that the melt front is linearly stable to small perturbations in the non-reactive case, but becomes linearly unstable upon introduction of an Arrhenius source term to model the chemical reaction. Results demonstrate that non-uniform melting acts as a mechanism to generate hot spots that are found to be sufficient to reduce the time to ignition when compared with the corresponding one-dimensional model of melting.

A facile method to enhance the uniformity and adhesion properties of water-based ceramic coating layers on hydrophobic polyethylene separators

NASA Astrophysics Data System (ADS)

Lee, Hoogil; Jeon, Hyunkyu; Gong, Seokhyeon; Ryou, Myung-Hyun; Lee, Yong Min

2018-01-01

To enhance the uniformity and adhesion properties of water-based ceramic coating layers on hydrophobic polyethylene (PE) separators, their surfaces were treated with thin and hydrophilic polydopamine layers. As a result, an aqueous ceramic coating slurry consisting of Al2O3 particles, carboxyl methyl cellulose (CMC) binders, and water solvent was easily spread on the separator surface, and a uniform ceramic layer was formed after solvent drying. Moreover, the ceramic coating layer showed greatly improved adhesion properties to the PE separator surface. Whereas the adhesion strength within the bulk coating layer (Fmid) ranged from 43 to 86 N m-1 depending on the binder content of 1.5-3.0 wt%, the adhesion strength at the interface between the ceramic coating layer and PE separator (Fsepa-Al2O3) was 245-360 N m-1, a value equivalent to an increase of four or five times. Furthermore, an additional ceramic coating layer of approximately 7 μm did not degrade the ionic conductivity and electrochemical properties of the bare PE separators. Thus, all the LiMn2O4/graphite cells with ceramic-coated separators delivered an improved cycle life and rate capability compared with those of the control cells with bare PE separators.

Structural and optical properties of PbS thin films grown by chemical bath deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seghaier, S.; Kamoun, N.; Guasch, C.

2007-09-19

Lead sulphide thin films are grown on glass substrates at various deposition times tD, in the range of 40-60 min per step of 2 min, using the chemical bath deposition technique. X-ray diffraction and atomic force microscopy are used to characterize the film structure. The surface composition is analysed by Auger electron spectroscopy. It appears that the as-prepared thin films are polycrystalline with cubic structure. Nanometric scale crystallites are uniformly distributed on the surface. They exhibit almost a stoechiometric composition with a [Pb]/[S] ratio equal to 1.10. Optical properties are studied in the range of 300-3300 nm by spectrophotometric measurements.more » Analysis of the optical absorption data of lead sulphide thin layers reveals a narrow optical direct band gap equal to 0.46 eV for the layer corresponding to a deposition time equal to 60 min.« less

Modulation of ultrafast laser-induced magnetization precession in BiFeO3-coated La0.67Sr0.33MnO3 thin films

NASA Astrophysics Data System (ADS)

Wan, Qian; Jin, KuiJuan; Wang, JieSu; Yao, HongBao; Gu, JunXing; Guo, HaiZhong; Xu, XiuLai; Yang, GuoZhen

2017-04-01

The ultrafast laser-excited magnetization dynamics of ferromagnetic (FM) La0.67Sr0.33MnO3 (LSMO) thin films with BiFeO3 (BFO) coating layers grown by laser molecular beam epitaxy are investigated using the optical pump-probe technique. Uniform magnetization precessions are observed in the films under an applied external magnetic field by measuring the time-resolved magneto-optical Kerr effect. The magnetization precession frequencies of the LSMO thin films with the BFO coating layers are lower than those of uncoated LSMO films, which is attributed to the suppression of the anisotropy field induced by the exchange interaction at the interface between the antiferromagnetic order of BFO and the FM order of LSMO.

Modeling and stabilization results for a charge or current-actuated active constrained layer (ACL) beam model with the electrostatic assumption

NASA Astrophysics Data System (ADS)

Özer, Ahmet Özkan

2016-04-01

An infinite dimensional model for a three-layer active constrained layer (ACL) beam model, consisting of a piezoelectric elastic layer at the top and an elastic host layer at the bottom constraining a viscoelastic layer in the middle, is obtained for clamped-free boundary conditions by using a thorough variational approach. The Rao-Nakra thin compliant layer approximation is adopted to model the sandwich structure, and the electrostatic approach (magnetic effects are ignored) is assumed for the piezoelectric layer. Instead of the voltage actuation of the piezoelectric layer, the piezoelectric layer is proposed to be activated by a charge (or current) source. We show that, the closed-loop system with all mechanical feedback is shown to be uniformly exponentially stable. Our result is the outcome of the compact perturbation argument and a unique continuation result for the spectral problem which relies on the multipliers method. Finally, the modeling methodology of the paper is generalized to the multilayer ACL beams, and the uniform exponential stabilizability result is established analogously.

Fabrication of Uniform Hydrogel Microparticles with Alternate Polyelectrolyte/Silica Shell Layers for Applications of Controlled Loading and Releasing

NASA Astrophysics Data System (ADS)

Jeong, Eun Sook; Kim, Jin Woong

2015-03-01

Hydrogel particles, also known as microgels, consist of cross-linked three-dimensional water-soluble polymer networks. They play an essential role in loading and delivering active ingredients in medicine, cosmetics, and foods. Despite their excellent biocompatibility as well as structural diversity, much wider applications are limited due mainly to their intrinsically loose network nature. This study introduces a practical and straightforward method that enables fabrication of hydrogel microparticles layered with a mechanically robust hybrid thin shell. Basically highly monodisperse hydrogel microparticles were produced in microcapillary devices. Then, their surface was coated with alternate polyelectrolyte layers through the layer-by-layer deposition. Finally a thin silica layer was again formed by reduction of silicate on the amino-functionalized polyelectrolyte layer. We have figured out that these hybrid hydrogel microparticles showed controlled loading and releasing behaviors for water-soluble probe molecules. Moreover, we have demonstrated that they can be applied for immobilization of biomacromolecules, such as bacteria and living cells, and even for targeted releasing.

Removal of long-lived 222Rn daughters by electropolishing thin layers of stainless steel

NASA Astrophysics Data System (ADS)

Schnee, R. W.; Bowles, M. A.; Bunker, R.; McCabe, K.; White, J.; Cushman, P.; Pepin, M.; Guiseppe, V. E.

2013-08-01

Long-lived alpha and beta emitters in the 222Rn decay chain on detector surfaces may be the limiting background in many experiments attempting to detect dark matter or neutrinoless double beta decay. Removal of tens of microns of material via electropolishing has been shown to be effective at removing radon daughters implanted into material surfaces. Some applications, however, require the removal of uniform and significantly smaller thicknesses. Here, we demonstrate that electropolishing < 1 μm from stainless-steel plates reduces the contamination efficiently, by a factor > 100. Examination of electropolished wires with a scanning electron microscope confirms that the thickness removed is reproducible and reasonably uniform. Together, these tests demonstrate the effectiveness of removal of radon daughters for a proposed low-radiation, multi-wire proportional chamber (the BetaCage), without compromising the screener's energy resolution. More generally, electropolishing thin layers of stainless steel may effectively remove radon daughters without compromising precision-machined parts.

Removal of long-lived {sup 222}Rn daughters by electropolishing thin layers of stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schnee, R. W.; Bowles, M. A.; Bunker, R.

Long-lived alpha and beta emitters in the {sup 222}Rn decay chain on detector surfaces may be the limiting background in many experiments attempting to detect dark matter or neutrinoless double beta decay. Removal of tens of microns of material via electropolishing has been shown to be effective at removing radon daughters implanted into material surfaces. Some applications, however, require the removal of uniform and significantly smaller thicknesses. Here, we demonstrate that electropolishing < 1 μm from stainless-steel plates reduces the contamination efficiently, by a factor > 100. Examination of electropolished wires with a scanning electron microscope confirms that the thicknessmore » removed is reproducible and reasonably uniform. Together, these tests demonstrate the effectiveness of removal of radon daughters for a proposed low-radiation, multi-wire proportional chamber (the BetaCage), without compromising the screener’s energy resolution. More generally, electropolishing thin layers of stainless steel may effectively remove radon daughters without compromising precision-machined parts.« less

Fabrication of solid oxide fuel cell by electrochemical vapor deposition

DOEpatents

Riley, B.; Szreders, B.E.

1988-04-26

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Spherization of the remnants of asymmetrical SN explosions in a uniform medium

NASA Astrophysics Data System (ADS)

Bisnovatyi-Kogan, G. S.; Blinnikov, S. I.

A 'snow-plow' approximation is used to project a spherical shape for a supernova remnant (SNR) after a shock wave has traveled through a uniform medium following an asymmetrical SN explosion. The asymmetry arises as magnetorotation causes the explosion. It is assumed that the main part of the mass remains in a thin layer after the explosion and that the layer can be described by 1,5-dimensional hydrodynamics. The cavity pressure inside the shock is assumed much greater than the pressure of the outside medium. The snow-plow model accounts for asymmetrical particle velocities in the expanding layer and the tangential velocity averaged across the shock. The equations are configured to conserve mass and momentum and have specific initial conditions. The calculations are in agreement with observations of Cas A.

A plane-type soil sampler

USGS Publications Warehouse

Frey, Paul J.

1963-01-01

While studying the effects of pesticides on fish and their environment for the Bureau of Sport Fisheries and Wildlife, I have developed a soil sampler that will collect a thin uniform layer of sediment from pond and stream bottoms. As it is becoming increasingly important to analyze the residual deposits of pesticides in this shallow layer of soil in aquatic environments, it seems useful to describe the apparatus and compare it with other samplers.

Experimental study of thermocapillary flows in a thin liquid layer with heat fluxes imposed on the free surface

NASA Technical Reports Server (NTRS)

Lai, Chun-Liang; Greenberg, Paul S.; Chai, An-Ti

1988-01-01

To study thermocapillary flows in a two-dimensional thin liquid layer with heat fluxes imposed on the free surface experimentally, a long tray configuration was employed to simulate the infinite layer. The surface temperature distribution due to thermocapillary convective for different flow regimes was measured and compared with theoretical predictions. A short tray configuration was also employed to study the end wall effects (insulating or conducting). The results show that for a strong convection flow with an insulating wall as the boundary the surface temperature distribution became quite uniform. Consequently, the thermocapillary driving force was greatly reduced. On the other hand, a strong fluid motion always existed adjacent to the conducting wall because of the large surface temperature gradient near the wall.

Thin layer imaging process for microlithography using radiation at strongly attenuated wavelengths

DOEpatents

Wheeler, David R.

2004-01-06

A method for patterning of resist surfaces which is particularly advantageous for systems having low photon flux and highly energetic, strongly attenuated radiation. A thin imaging layer is created with uniform silicon distribution in a bilayer format. An image is formed by exposing selected regions of the silylated imaging layer to radiation. The radiation incident upon the silyliated resist material results in acid generation which either catalyzes cleavage of Si--O bonds to produce moieties that are volatile enough to be driven off in a post exposure bake step or produces a resist material where the exposed portions of the imaging layer are soluble in a basic solution, thereby desilylating the exposed areas of the imaging layer. The process is self limiting due to the limited quantity of silyl groups within each region of the pattern. Following the post exposure bake step, an etching step, generally an oxygen plasma etch, removes the resist material from the de-silylated areas of the imaging layer.

Characterisation of nickel silicide thin films by spectroscopy and microscopy techniques.

PubMed

Bhaskaran, M; Sriram, S; Holland, A S; Evans, P J

2009-01-01

This article discusses the formation and detailed materials characterisation of nickel silicide thin films. Nickel silicide thin films have been formed by thermally reacting electron beam evaporated thin films of nickel with silicon. The nickel silicide thin films have been analysed using Auger electron spectroscopy (AES) depth profiles, secondary ion mass spectrometry (SIMS), and Rutherford backscattering spectroscopy (RBS). The AES depth profile shows a uniform NiSi film, with a composition of 49-50% nickel and 51-50% silicon. No oxygen contamination either on the surface or at the silicide-silicon interface was observed. The SIMS depth profile confirms the existence of a uniform film, with no traces of oxygen contamination. RBS results indicate a nickel silicide layer of 114 nm, with the simulated spectra in close agreement with the experimental data. Atomic force microscopy and transmission electron microscopy have been used to study the morphology of the nickel silicide thin films. The average grain size and average surface roughness of these films was found to be 30-50 and 0.67 nm, respectively. The film surface has also been studied using Kikuchi patterns obtained by electron backscatter detection.

Modeling of thin, back-wall silicon solar cells

NASA Technical Reports Server (NTRS)

Baraona, C. R.

1979-01-01

The performance of silicon solar cells with p-n junctions on the nonilluminated surface (i.e., upside-down or back-wall cells) was calculated. These structures consisted of a uniformly shaped p-type substrate layer, a p(+)-type field layer on the front (illuminated) surface, and a shallow, n-type junction on the back (nonilluminated) surface. A four-layer solar cell model was used to calculate efficiency, open-circuit voltage, and short-circuit current. The effect on performance of p-layer thickness and resistivity was determined. The diffusion length was varied to simulate the effect of radiation damage. The results show that peak initial efficiencies greater than 15 percent are possible for cell thicknesses or 100 micrometers or less. After 10 years of radiation damage in geosynchronous orbit, thin (25 to 50 micrometers thick) cells made from 10 to 100 ohm cm material show the smallest decrease (approximately 10 percent) in performance.

An Electrostatically Self-Assembled Thin Film Made of Zn-Substituted Tungstoborate and Rhodamine B with Photoelectrochemical Properties.

PubMed

Mao, Xu; Zhang, Jia-Ning; Gao, Li-Hua; Su, Yu; Chen, Peng-Xia; Wang, Ke-Zhi

2016-04-01

An electrostatically self-assembled multilayer thin film consisting of alternating layers of Keggin polyoxometalate of Zn-substituted tungstoborate (BW11Zn) and Rhodamine B (RhB) has successfully been prepared on a quartz and indium-tin oxide (ITO) glass substrate. The ultraviolet-visible (UV-vis) absorption spectra demonstrated that the electrostatically self-assembled film of (BW11Zn/RhB)n was uniformly deposited layer by layer, and the RhB molecules in the film formed the J-aggregation. The photoelectrochemical investigations showed that the films generated stable cathodic photocurrents that originated from RhB, and the maximal cathodic photocurrent density generated by an eight-layer film was 4.9 µA/cm2 while the film was irradiated with 100 mW/cm2 polychromatic light of 730 nm > λ > 325 nm at an applied potential of 0 V versus a saturated calomel electrode.

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact

PubMed Central

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-01-01

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>107A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact. PMID:29112139

Ultra Thin Poly-Si Nanosheet Junctionless Field-Effect Transistor with Nickel Silicide Contact.

PubMed

Lin, Yu-Ru; Tsai, Wan-Ting; Wu, Yung-Chun; Lin, Yu-Hsien

2017-11-07

This study demonstrated an ultra thin poly-Si junctionless nanosheet field-effect transistor (JL NS-FET) with nickel silicide contact. For the nickel silicide film, two-step annealing and a Ti capping layer were adopted to form an ultra thin uniform nickel silicide film with low sheet resistance (Rs). The JL NS-FET with nickel silicide contact exhibited favorable electrical properties, including a high driving current (>10⁷A), subthreshold slope (186 mV/dec.), and low parasitic resistance. In addition, this study compared the electrical characteristics of JL NS-FETs with and without nickel silicide contact.

Enhanced c-axis orientation of aluminum nitride thin films by plasma-based pre-conditioning of sapphire substrates for SAW applications

NASA Astrophysics Data System (ADS)

Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.

2018-03-01

Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.

Investigation of the thickness non-uniformity of the very thin silicon-strip detectors

NASA Astrophysics Data System (ADS)

Liu, Qiang; Ye, Yanlin; Li, Zhihuan; Lin, Chengjian; Jia, Huiming; Ge, Yucheng; Li, Qite; Lou, Jianling; Yang, Xiaofei; Yang, Biao; Feng, Jun; Zang, Hongliang; Chen, Zhiqiang; Liu, Yang; Liu, Wei; Chen, Sidong; Yu, Hanzhou; Li, Jingjing; Zhang, Yun; Yang, Feng; Yang, Lei; Ma, Nanru; Sun, Lijie; Wang, Dongxi

2018-07-01

The properties of some very thin (∼ 20 μm) large-area Single-sided Silicon-Strip Detectors (SSSDs) were investigated by using the 12C-particles elastically scattered from a Au target. In the detection system, each thin SSSD was installed in front of a thick (300 μm or 500 μm) Double-sided Silicon-Strip Detector (DSSD) to form a ΔE - E particle-telescope. The energy calibration of these detectors was realized by varying the beam energy and also by the irradiation from a three-component α-particle source. The thickness distribution each SSSD is precisely determined from the energy loss in the thin layer, which was independently measured by the corresponding DSSD. It is found that, for the SSSD with the nominal thicknesses of ∼ 20 μm, the real thickness may vary by several μm over the active area. The reason for this large non-uniformity still needs to be investigated. For the present application, this non-uniformity could be corrected according to the known pixel-thickness. This correction allows to restore a good particle identification (PID) performance for the entire large-area detector, the importance of which is demonstrated by an example of measuring the cluster-decays of the highly-excited resonant states in 16O.

Vapor-solid growth of one-dimensional layer-structured gallium sulfide nanostructures.

PubMed

Shen, Guozhen; Chen, Di; Chen, Po-Chiang; Zhou, Chongwu

2009-05-26

Gallium sulfide (GaS) is a wide direct bandgap semiconductor with uniform layered structure used in photoelectric devices, electrical sensors, and nonlinear optical applications. We report here the controlled synthesis of various high-quality one-dimensional GaS nanostructures (thin nanowires, nanobelts, and zigzag nanobelts) as well as other kinds of GaS products (microbelts, hexagonal microplates, and GaS/Ga(2)O(3) heterostructured nanobelts) via a simple vapor-solid method. The morphology and structures of the products can be easily controlled by substrate temperature and evaporation source. Optical properties of GaS thin nanowires and nanobelts were investigated and both show an emission band centered at 580 nm.

In-plane and through-plane non-uniform carbon corrosion of polymer electrolyte fuel cell cathode catalyst layer during extended potential cycles

NASA Astrophysics Data System (ADS)

Ghosh, Sourov; Ohashi, Hidenori; Tabata, Hiroshi; Hashimasa, Yoshiyuki; Yamaguchi, Takeo

2017-09-01

The impact of electrochemical carbon corrosion via potential cycling durability tests mimicking start-stop operation events on the microstructure of the cathode catalyst layer in polymer electrolyte fuel cells (PEFCs) is investigated using focused ion beam (FIB) fabrication without/with the pore-filling technique and subsequent scanning electron microscope (SEM) observations. FIB/SEM investigations without pore-filling reveals that the durability test induces non-uniform cathode shrinking across the in-plane direction; the thickness of the catalyst layer decreases more under the gas flow channel compared to the area under the rim of the flow field. Furthermore, FIB/SEM investigations with the pore-filling technique reveal that the durability test also induces non-uniform cathode shrinking in the through-plane direction; the pores in the area close to the membrane are more shrunken compared with those close to the microporous layer. In particular, a thin area (1-1.5 μm) close to the membrane is found to be severely damaged; it includes closed pores that hinder mass transport through the catalyst layer. It is suggested that uneven carbon corrosion and catalyst layer compaction are responsible for the performance loss during potential cycling operation of PEFCs.

Effect of precursor concentration and film thickness deposited by layer on nanostructured TiO2 thin films

NASA Astrophysics Data System (ADS)

Affendi, I. H. H.; Sarah, M. S. P.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

Sol-gel spin coating method is used in the production of nanostructured TiO2 thin film. The surface topology and morphology was observed using the Atomic Force Microscopy (AFM) and Field Emission Scanning Electron Microscopy (FESEM). The electrical properties were investigated by using two probe current-voltage (I-V) measurements to study the electrical resistivity behavior, hence the conductivity of the thin film. The solution concentration will be varied from 14.0 to 0.01wt% with 0.02wt% interval where the last concentration of 0.02 to 0.01wt% have 0.01wt% interval to find which concentrations have the highest conductivity then the optimized concentration's sample were chosen for the thickness parameter based on layer by layer deposition from 1 to 6 layer. Based on the result, the lowest concentration of TiO2, the surface becomes more uniform and the conductivity will increase. As the result, sample of 0.01wt% concentration have conductivity value of 1.77E-10 S/m and will be advanced in thickness parameter. Whereas in thickness parameter, the 3layer deposition were chosen as its conductivity is the highest at 3.9098E9 S/m.

Theoretical analysis of optical properties of dielectric coatings dependence on substrate subsurface defects

NASA Astrophysics Data System (ADS)

Shen, Jian; Liu, Shouhua; Shen, Zicai; Shao, Jianda; Fan, Zhengxiu

2006-03-01

A model for refractive index of stratified dielectric substrate was put forward according to theories of inhomogeneous coatings. The substrate was divided into surface layer, subsurface layer and bulk layer along the normal direction of its surface. Both the surface layer (separated into N1 sublayers of uniform thickness) and subsurface layer (separated into N2 sublayers of uniform thickness), whose refractive indices have different statistical distributions, are equivalent to inhomogeneous coatings, respectively. And theoretical deduction was carried out by employing characteristic matrix method of optical coatings. An example of mathematical calculation for optical properties of dielectric coatings had been presented. The computing results indicate that substrate subsurface defects can bring about additional bulk scattering and change propagation characteristic in thin film and substrate. Therefore, reflectance, reflective phase shift and phase difference of an assembly of coatings and substrate deviate from ideal conditions. The model will provide some beneficial theory directions for improving optical properties of dielectric coatings via substrate surface modification.

Atomic and molecular layer deposition for surface modification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vähä-Nissi, Mika, E-mail: mika.vaha-nissi@vtt.fi; Sievänen, Jenni; Salo, Erkki

2014-06-01

Atomic and molecular layer deposition (ALD and MLD, respectively) techniques are based on repeated cycles of gas–solid surface reactions. A partial monolayer of atoms or molecules is deposited to the surface during a single deposition cycle, enabling tailored film composition in principle down to molecular resolution on ideal surfaces. Typically ALD/MLD has been used for applications where uniform and pinhole free thin film is a necessity even on 3D surfaces. However, thin – even non-uniform – atomic and molecular deposited layers can also be used to tailor the surface characteristics of different non-ideal substrates. For example, print quality of inkjetmore » printing on polymer films and penetration of water into porous nonwovens can be adjusted with low-temperature deposited metal oxide. In addition, adhesion of extrusion coated biopolymer to inorganic oxides can be improved with a hybrid layer based on lactic acid. - Graphical abstract: Print quality of a polylactide film surface modified with atomic layer deposition prior to inkjet printing (360 dpi) with an aqueous ink. Number of printed dots illustrated as a function of 0, 5, 15 and 25 deposition cycles of trimethylaluminum and water. - Highlights: • ALD/MLD can be used to adjust surface characteristics of films and fiber materials. • Hydrophobicity after few deposition cycles of Al{sub 2}O{sub 3} due to e.g. complex formation. • Same effect on cellulosic fabrics observed with low temperature deposited TiO{sub 2}. • Different film growth and oxidation potential with different precursors. • Hybrid layer on inorganic layer can be used to improve adhesion of polymer melt.« less

Improved Mobility and Bias Stability of Thin Film Transistors Using the Double-Layer a-InGaZnO/a-InGaZnO:N Channel.

PubMed

Yu, H; Zhang, L; Li, X H; Xu, H Y; Liu, Y C

2016-04-01

The amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) were demonstrated based on a double-layer channel structure, where the channel is composed of an ultrathin nitro-genated a-IGZO (a-IGZO:N) layer and an undoped a-IGZO layer. The double-layer channel device showed higher saturation mobility and lower threshold-voltage shift (5.74 cm2/Vs, 2.6 V) compared to its single-layer counterpart (0.17 cm2/Vs, 7.23 V). The improvement can be attributed to three aspects: (1) improved carrier transport properties of the channel by the a-IGZO:N layer with high carrier mobility and the a-IGZO layer with high carrier concentration, (2) reduced interfacial trap density between the active channel and the gate insulator, and (3) higher surface flatness of the double-layer channel. Our study reveals key insights into double-layer channel, involving selecting more suitable electrical property for back-channel layer and more suitable interface modification for active layer. Meanwhile, room temperature fabrication amorphous TFTs offer certain advantages on better flexibility and higher uniformity over a large area.

Method for fabricating thin films of pyrolytic carbon

DOEpatents

Brassell, Gilbert W.; Lewis, Jr., John; Weber, Gary W.

1982-01-01

The present invention relates to a method for fabricating ultra-thin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the polymeric resin coating with thermally induced forces.

Lanthanide-Assisted Deposition of Strongly Electro-optic PZT Thin Films on Silicon: Toward Integrated Active Nanophotonic Devices.

PubMed

George, J P; Smet, P F; Botterman, J; Bliznuk, V; Woestenborghs, W; Van Thourhout, D; Neyts, K; Beeckman, J

2015-06-24

The electro-optical properties of lead zirconate titanate (PZT) thin films depend strongly on the quality and crystallographic orientation of the thin films. We demonstrate a novel method to grow highly textured PZT thin films on silicon using the chemical solution deposition (CSD) process. We report the use of ultrathin (5-15 nm) lanthanide (La, Pr, Nd, Sm) based intermediate layers for obtaining preferentially (100) oriented PZT thin films. X-ray diffraction measurements indicate preferentially oriented intermediate Ln2O2CO3 layers providing an excellent lattice match with the PZT thin films grown on top. The XRD and scanning electron microscopy measurements reveal that the annealed layers are dense, uniform, crack-free and highly oriented (>99.8%) without apparent defects or secondary phases. The EDX and HRTEM characterization confirm that the template layers act as an efficient diffusion barrier and form a sharp interface between the substrate and the PZT. The electrical measurements indicate a dielectric constant of ∼650, low dielectric loss of ∼0.02, coercive field of 70 kV/cm, remnant polarization of 25 μC/cm(2), and large breakdown electric field of 1000 kV/cm. Finally, the effective electro-optic coefficients of the films are estimated with a spectroscopic ellipsometer measurement, considering the electric field induced variations in the phase reflectance ratio. The electro-optic measurements reveal excellent linear effective pockels coefficients of 110 to 240 pm/V, which makes the CSD deposited PZT thin film an ideal candidate for Si-based active integrated nanophotonic devices.

V2O5 thin film deposition for application in organic solar cells

NASA Astrophysics Data System (ADS)

Arbab, Elhadi A. A.; Mola, Genene Tessema

2016-04-01

Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

Thermal conductivity and thermal boundary resistance of atomic layer deposited high-k dielectric aluminum oxide, hafnium oxide, and titanium oxide thin films on silicon

NASA Astrophysics Data System (ADS)

Scott, Ethan A.; Gaskins, John T.; King, Sean W.; Hopkins, Patrick E.

2018-05-01

The need for increased control of layer thickness and uniformity as device dimensions shrink has spurred increased use of atomic layer deposition (ALD) for thin film growth. The ability to deposit high dielectric constant (high-k) films via ALD has allowed for their widespread use in a swath of optical, optoelectronic, and electronic devices, including integration into CMOS compatible platforms. As the thickness of these dielectric layers is reduced, the interfacial thermal resistance can dictate the overall thermal resistance of the material stack compared to the resistance due to the finite dielectric layer thickness. Time domain thermoreflectance is used to interrogate both the thermal conductivity and the thermal boundary resistance of aluminum oxide, hafnium oxide, and titanium oxide films on silicon. We calculate a representative design map of effective thermal resistances, including those of the dielectric layers and boundary resistances, as a function of dielectric layer thickness, which will be of great importance in predicting the thermal resistances of current and future devices.

Hybrid Filter Membrane

NASA Technical Reports Server (NTRS)

Laicer, Castro; Rasimick, Brian; Green, Zachary

2012-01-01

Cabin environmental control is an important issue for a successful Moon mission. Due to the unique environment of the Moon, lunar dust control is one of the main problems that significantly diminishes the air quality inside spacecraft cabins. Therefore, this innovation was motivated by NASA s need to minimize the negative health impact that air-suspended lunar dust particles have on astronauts in spacecraft cabins. It is based on fabrication of a hybrid filter comprising nanofiber nonwoven layers coated on porous polymer membranes with uniform cylindrical pores. This design results in a high-efficiency gas particulate filter with low pressure drop and the ability to be easily regenerated to restore filtration performance. A hybrid filter was developed consisting of a porous membrane with uniform, micron-sized, cylindrical pore channels coated with a thin nanofiber layer. Compared to conventional filter media such as a high-efficiency particulate air (HEPA) filter, this filter is designed to provide high particle efficiency, low pressure drop, and the ability to be regenerated. These membranes have well-defined micron-sized pores and can be used independently as air filters with discreet particle size cut-off, or coated with nanofiber layers for filtration of ultrafine nanoscale particles. The filter consists of a thin design intended to facilitate filter regeneration by localized air pulsing. The two main features of this invention are the concept of combining a micro-engineered straight-pore membrane with nanofibers. The micro-engineered straight pore membrane can be prepared with extremely high precision. Because the resulting membrane pores are straight and not tortuous like those found in conventional filters, the pressure drop across the filter is significantly reduced. The nanofiber layer is applied as a very thin coating to enhance filtration efficiency for fine nanoscale particles. Additionally, the thin nanofiber coating is designed to promote capture of dust particles on the filter surface and to facilitate dust removal with pulse or back airflow.

Fabrication of high performance thin-film transistors via pressure-induced nucleation.

PubMed

Kang, Myung-Koo; Kim, Si Joon; Kim, Hyun Jae

2014-10-31

We report a method to improve the performance of polycrystalline Si (poly-Si) thin-film transistors (TFTs) via pressure-induced nucleation (PIN). During the PIN process, spatial variation in the local solidification temperature occurs because of a non-uniform pressure distribution during laser irradiation of the amorphous Si layer, which is capped with an SiO2 layer. This leads to a four-fold increase in the grain size of the poly-Si thin-films formed using the PIN process, compared with those formed using conventional excimer laser annealing. We find that thin films with optimal electrical properties can be achieved with a reduction in the number of laser irradiations from 20 to 6, as well as the preservation of the interface between the poly-Si and the SiO2 gate insulator. This interface preservation becomes possible to remove the cleaning process prior to gate insulator deposition, and we report devices with a field-effect mobility greater than 160 cm(2)/Vs.

Lens of controllable optical field with thin film metallic glasses for UV-LEDs.

PubMed

Pan, C T; Chen, Y C; Lin, Po-Hung; Hsieh, C C; Hsu, F T; Lin, Po-Hsun; Chang, C M; Hsu, J H; Huang, J C

2014-06-16

In the exposure process of photolithography, a free-form lens is designed and fabricated for UV-LED (Ultraviolet Light-Emitting Diode). Thin film metallic glasses (TFMG) are adopted as UV reflection layers to enhance the irradiance and uniformity. The Polydimethylsiloxane (PDMS) with high transmittance is used as the lens material. The 3-D fast printing is attempted to make the mold of the lens. The results show that the average irradiance can be enhanced by 6.5~6.7%, and high uniformity of 85~86% can be obtained. Exposure on commercial thick photoresist using this UV-LED system shows 3~5% dimensional deviation, lower than the 6~8% deviation for commercial mercury lamp system. This current system shows promising potential to replace the conventional mercury exposure systems.

Vehicle cabin cooling system for capturing and exhausting heated boundary layer air from inner surfaces of solar heated windows

DOEpatents

Farrington, Robert B.; Anderson, Ren

2001-01-01

The cabin cooling system includes a cooling duct positioned proximate and above upper edges of one or more windows of a vehicle to exhaust hot air as the air is heated by inner surfaces of the windows and forms thin boundary layers of heated air adjacent the heated windows. The cabin cooling system includes at least one fan to draw the hot air into the cooling duct at a flow rate that captures the hot air in the boundary layer without capturing a significant portion of the cooler cabin interior air and to discharge the hot air at a point outside the vehicle cabin, such as the vehicle trunk. In a preferred embodiment, the cooling duct has a cross-sectional area that gradually increases from a distal point to a proximal point to the fan inlet to develop a substantially uniform pressure drop along the length of the cooling duct. Correspondingly, this cross-sectional configuration develops a uniform suction pressure and uniform flow rate at the upper edge of the window to capture the hot air in the boundary layer adjacent each window.

Interface Properties of Atomic-Layer-Deposited Al2O3 Thin Films on Ultraviolet/Ozone-Treated Multilayer MoS2 Crystals.

PubMed

Park, Seonyoung; Kim, Seong Yeoul; Choi, Yura; Kim, Myungjun; Shin, Hyunjung; Kim, Jiyoung; Choi, Woong

2016-05-11

We report the interface properties of atomic-layer-deposited Al2O3 thin films on ultraviolet/ozone (UV/O3)-treated multilayer MoS2 crystals. The formation of S-O bonds on MoS2 after low-power UV/O3 treatment increased the surface energy, allowing the subsequent deposition of uniform Al2O3 thin films. The capacitance-voltage measurement of Au-Al2O3-MoS2 metal oxide semiconductor capacitors indicated n-type MoS2 with an electron density of ∼10(17) cm(-3) and a minimum interface trap density of ∼10(11) cm(-2) eV(-1). These results demonstrate the possibility of forming a high-quality Al2O3-MoS2 interface by proper UV/O3 treatment, providing important implications for their integration into field-effect transistors.

Numerical study of the influence of solid polarization on electrophoresis at finite Debye thickness.

PubMed

Bhattacharyya, Somnath; De, Simanta

2015-09-01

The influence of solid polarization on the electrophoresis of a uniformly charged dielectric particle for finite values of the particle-to-fluid dielectric permittivity ratio is analyzed quantitatively without imposing the thin Debye length or weak-field assumption. Present analysis is based on the computation of the coupled Poisson-Nernst-Planck and Stokes equations in the fluid domain along with the Laplace equation within the solid. The electrophoretic velocity is determined through the balance of forces acting on the particle. The solid polarization of the charged particle produces a reduction on its electrophoretic velocity compared to a nonpolarizable particle of the same surface charge density. In accordance with the existing thin-layer analysis, our computed results for thin Debye layer shows that the solid polarization is important only when the applied electric field is strong. When the Debye length is in the order of the particle size, the electrophoretic velocity decreases with the rise of the particle permittivity and attains a saturation limit at large values of the permittivity. Our computed solution for electrophoretic velocity is in agreement with the existing asymptotic analyses based on a thin Debye layer for limiting cases.

Integrating Epitaxial-Like Pb(Zr,Ti)O3 Thin-Film into Silicon for Next-Generation Ferroelectric Field-Effect Transistor

PubMed Central

Park, Jae Hyo; Kim, Hyung Yoon; Jang, Gil Su; Seok, Ki Hwan; Chae, Hee Jae; Lee, Sol Kyu; Kiaee, Zohreh; Joo, Seung Ki

2016-01-01

The development of ferroelectric random-access memory (FeRAM) technology with control of grain boundaries would result in a breakthrough for new nonvolatile memory devices. The excellent piezoelectric and electrical properties of bulk ferroelectrics are degraded when the ferroelectric is processed into thin films because the grain boundaries then form randomly. Controlling the nature of nucleation and growth are the keys to achieving a good crystalline thin-film. However, the sought after high-quality ferroelectric thin-film has so far been thought to be impossible to make, and research has been restricted to atomic-layer deposition which is extremely expensive and has poor reproducibility. Here we demonstrate a novel epitaxial-like growth technique to achieve extremely uniform and large rectangular-shaped grains in thin-film ferroelectrics by dividing the nucleation and growth phases. With this technique, it is possible to achieve 100-μm large uniform grains, even made available on Si, which is large enough to fabricate a field-effect transistor in each grain. The electrical and reliability test results, including endurance and retention test results, were superior to other FeRAMs reported so far and thus the results presented here constitute the first step toward the development of FeRAM using epitaxial-like ferroelectric thin-films. PMID:27005886

Solvent effects of a dimethyldicyanoquinonediimine buffer layer as N-type material on the performance of organic photovoltaic cells.

PubMed

Yang, Eui Yeol; Oh, Se Young

2014-08-01

In the present work, we have fabricated organic photovoltaic cells consisting of ITO/PEDOT:PSS/P3HT:PCBM/DMDCNQI/Al using a dip-coating method with various solvent systems. We have investigated solvent effects (such as solubility, viscosity and vapor pressure) in deposition of a thin DMDCNQI buffer layer on the performance of organic photovoltaic cells. The solvent system which had low viscosity and good solubility properties, made a dense and uniform DMDCNQI ultra thin film, resulting in a high performance device. In particular, a prepared organic photovoltaic cell was fabricated using a cosolvent system (methanol:methylenechloride = 3:1) and showed a maximum power conversion efficiency of 4.53%.

Low temperature Zn diffusion for GaSb solar cell structures fabrication

NASA Technical Reports Server (NTRS)

Sulima, Oleg V.; Faleev, Nikolai N.; Kazantsev, Andrej B.; Mintairov, Alexander M.; Namazov, Ali

1995-01-01

Low temperature Zn diffusion in GaSb, where the minimum temperature was 450 C, was studied. The pseudo-closed box (PCB) method was used for Zn diffusion into GaAs, AlGaAs, InP, InGaAs and InGaAsP. The PCB method avoids the inconvenience of sealed ampoules and proved to be simple and reproducible. The special design of the boat for Zn diffusion ensured the uniformality of Zn vapor pressure across the wafer surface, and thus the uniformity of the p-GaSb layer depth. The p-GaSb layers were studied using Raman scattering spectroscopy and the x-ray rocking curve method. As for the postdiffusion processing, an anodic oxidation was used for a precise thinning of the diffused GaSb layers. The results show the applicability of the PCB method for the large-scale production of the GaSb structures for solar cells.

Design and fabrication of adjustable x-ray optics using piezoelectric thin films

NASA Astrophysics Data System (ADS)

Walker, J.; Liu, T.; Tendulkar, M.; Burrows, D.; DeRoo, C. T.; Allured, R.; Hertz, E.; Cotroneo, V.; Reid, P.; Schwartz, E. D.; Jackson, T. N.; Trolier-McKinstry, S.

2017-08-01

Piezoelectric adjustable optics are being developed for high throughput, high resolution, low mass Xray mirror assemblies. These optics require robust piezoelectric thin films and reproducible lithographic patterning on curved glass substrates. This work details the cleaning of Corning Eagle XG glass substrates for thin shell X-ray mirrors by a three stage acid and solvent cleaning procedure before a 0.02 μm Ti adhesion layer and a 0.1 μm Pt bottom electrode layer was deposited using DC magnetron sputtering. Piezoelectric Pb(Zr0.52Ti0.48)0.99Nb0.01O3 thin films with a thickness of 1.5 μm were then deposited by radio frequency magnetron sputtering in three 0.5 µm layers with intermittent annealing steps in a rapid thermal annealing furnace at 650°C for 60 seconds. Defects observed in the piezoelectric thin films were linked to residue remaining on the glass after cleaning. 112 piezoelectric cells and 100 μm wide conductive Pt traces were patterned using bilayer photolithography. The photoresist layers were deposited using spin coating at 2000 and 4000 RPM to achieve uniform 1 μm thick layers, resulting in reproducibly resolved features with limiting resolutions of approximately >25 μm. The resulting mirror pieces achieved a 100% yield, with average relative permittivity of 1270, dielectric loss 0.047, coercive field 30 kV/cm and remanent polarization of 20 μC/cm2 . While the defects observed in the films appeared to have not influence on the electrical properties, additional cleaning steps using DI water were proposed to further reduce their presence.

Spin-coated epoxy resin embedding technique enables facile SEM/FIB thickness determination of porous metal oxide ultra-thin films.

PubMed

Peña, B; Owen, G Rh; Dettelbach, K E; Berlinguette, C P

2018-01-25

A facile nonsubjective method was designed to measure porous nonconductive iron oxide film thickness using a combination of a focused ion beam (FIB) and scanning electron microscopy. Iron oxide films are inherently nonconductive and porous, therefore the objective of this investigation was to optimize a methodology that would increase the conductivity of the film to facilitate high resolution imaging with a scanning electron microscopy and to preserve the porous nature of the film that could potentially be damaged by the energy of the FIB. Sputter coating the sample with a thin layer of iridium before creating the cross section with the FIB decreased sample charging and drifting, but differentiating the iron layer from the iridium coating with backscattered electron imaging was not definitive, making accurate assumptions of the delineation between the two metals difficult. Moreover, the porous nature of the film was lost due to beam damage following the FIB process. A thin layer plastication technique was therefore used to embed the porous film in epoxy resin that would provide support for the film during the FIB process. However, the thickness of the resin created using conventional thin layer plastication processing varied across the sample, making the measuring process only possible in areas where the resin layer was at its thinnest. Such variation required navigating the area for ideal milling areas, which increased the subjectivity of the process. We present a method to create uniform thin resin layers, of controlled thickness, that are ideal for quantifying the thickness of porous nonconductive films with FIB/scanning electron microscopy. © 2018 The Authors Journal of Microscopy © 2018 Royal Microscopical Society.

Gas expanded polymer process to anneal nanoparticle dispersion in thin films

DOE PAGES

Ambuken, Preejith V.; Stretz, Holly A.; Dadmun, Mark; ...

2015-04-21

A spin-coating solution comprising poly(3-hexylthiophene) (P3HT) and phenyl-C61-butyric acid methyl ester (PCBM) nanoparticles used to create organic photovoltaic (OPV) active layers have been shown to adopt a non-uniform concentration profile across the thin film dimension. This inhomogeneous distribution can reduce the efficiency of the device. For our new process, gas expanded polymer (GXP) annealing, is applied to P3HT/PCBM thin film blends, enabling the distribution of the PCBM nanoparticles to be manipulated by varying the GXP processing conditions. Films of 50 nm thickness (nominally) created by spin casting a blend of P3HT mixed with PCBM were annealed by oscillatory GXP andmore » GXP at constant pressure using high pressure CO 2. An increase in P3HT crystallinity (detected by X-ray diffraction and UV-vis spectroscopy) along with a more uniform distribution of PCBM nanoparticles in the thickness dimension, as interpreted from neutron reflectivity measurements, were observed after oscillatory GXP annealing. In addition, static water contact angles suggest that the film/air interface is enriched in PCBM relative to the as-cast film. Finally, these results demonstrate that GXP annealing, which is commercially scalable, can be successfully used to create a uniform distribution of PCBM nanoparticles across the thickness dimension in a P3HT thin film.« less

Terahertz emission from thermally-managed square intrinsic Josephson junction microstrip antennas

NASA Astrophysics Data System (ADS)

Klemm, Richard; Davis, Andrew; Wang, Qing

We show for thin square microstrip antennas that the transverse magnetic electromagnetic cavity modes are greatly restricted in number due to the point group symmetry of a square. For the ten lowest frequency emissions, we present plots of the orthonormal wave functions and of the angular distributions of the emission power obtained from the uniform Josephson current source and from the excitation of an electromagnetic cavity mode excited in the intrinsic Josephson junctions between the layers of a highly anisotropic layered superconductor.

Impact of Film Thickness of Ultrathin Dip-Coated Compact TiO2 Layers on the Performance of Mesoscopic Perovskite Solar Cells.

PubMed

Masood, Muhammad Talha; Weinberger, Christian; Sarfraz, Jawad; Rosqvist, Emil; Sandén, Simon; Sandberg, Oskar J; Vivo, Paola; Hashmi, Ghufran; Lund, Peter D; Österbacka, Ronald; Smått, Jan-Henrik

2017-05-31

Uniform and pinhole-free electron-selective TiO 2 layers are of utmost importance for efficient perovskite solar cells. Here we used a scalable and low-cost dip-coating method to prepare uniform and ultrathin (5-50 nm) compact TiO 2 films on fluorine-doped tin oxide (FTO) glass substrates. The thickness of the film was tuned by changing the TiCl 4 precursor concentration. The formed TiO 2 follows the texture of the underlying FTO substrates, but at higher TiCl 4 concentrations, the surface roughness is substantially decreased. This change occurs at a film thickness close to 20-30 nm. A similar TiCl 4 concentration is needed to produce crystalline TiO 2 films. Furthermore, below this film thickness, the underlying FTO might be exposed resulting in pinholes in the compact TiO 2 layer. When integrated into mesoscopic perovskite solar cells there appears to be a similar critical compact TiO 2 layer thickness above which the devices perform more optimally. The power conversion efficiency was improved by more than 50% (from 5.5% to ∼8.6%) when inserting a compact TiO 2 layer. Devices without or with very thin compact TiO 2 layers display J-V curves with an "s-shaped" feature in the negative voltage range, which could be attributed to immobilized negative ions at the electron-extracting interface. A strong correlation between the magnitude of the s-shaped feature and the exposed FTO seen in the X-ray photoelectron spectroscopy measurements indicates that the s-shape is related to pinholes in the compact TiO 2 layer when it is too thin.

Ultra-thin distributed Bragg reflectors via stacked single-crystal silicon nanomembranes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cho, Minkyu; Seo, Jung-Hun; Lee, Jaeseong

2015-05-04

In this paper, we report ultra-thin distributed Bragg reflectors (DBRs) via stacked single-crystal silicon (Si) nanomembranes (NMs). Mesh hole-free single-crystal Si NMs were released from a Si-on-insulator substrate and transferred to quartz and Si substrates. Thermal oxidation was applied to the transferred Si NM to form high-quality SiO{sub 2} and thus a Si/SiO{sub 2} pair with uniform and precisely controlled thicknesses. The Si/SiO{sub 2} layers, as smooth as epitaxial grown layers, minimize scattering loss at the interface and in between the layers. As a result, a reflection of 99.8% at the wavelength range from 1350 nm to 1650 nm can be measuredmore » from a 2.5-pair DBR on a quartz substrate and 3-pair DBR on a Si substrate with thickness of 0.87 μm and 1.14 μm, respectively. The high reflection, ultra-thin DBRs developed here, which can be applied to almost any devices and materials, holds potential for application in high performance optoelectronic devices and photonics applications.« less

Asymmetric block copolymer membranes with ultrahigh porosity and hierarchical pore structure by plain solvent evaporation.

PubMed

Yu, H; Qiu, X; Behzad, A R; Musteata, V; Smilgies, D-M; Nunes, S P; Peinemann, K-V

2016-10-04

Membranes with a hierarchical porous structure could be manufactured from a block copolymer blend by pure solvent evaporation. Uniform pores in a 30 nm thin skin layer supported by a macroporous structure were formed. This new process is attractive for membrane production because of its simplicity and the lack of liquid waste.

Stacked waveguide reactors with gradient embedded scatterers for high-capacity water cleaning

DOE PAGES

Ahsan, Syed Saad; Gumus, Abdurrahman; Erickson, David

2015-11-04

We present a compact water-cleaning reactor with stacked layers of waveguides containing gradient patterns of optical scatterers that enable uniform light distribution and augmented water-cleaning rates. Previous photocatalytic reactors using immersion, external, or distributive lamps suffer from poor light distribution that impedes scalability. Here, we use an external UV-source to direct photons into stacked waveguide reactors where we scatter the photons uniformly over the length of the waveguide to thin films of TiO 2-catalysts. In conclusion, we also show 4.5 times improvement in activity over uniform scatterer designs, demonstrate a degradation of 67% of the organic dye, and characterize themore » degradation rate constant.« less

Stacked waveguide reactors with gradient embedded scatterers for high-capacity water cleaning

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ahsan, Syed Saad; Gumus, Abdurrahman; Erickson, David

We present a compact water-cleaning reactor with stacked layers of waveguides containing gradient patterns of optical scatterers that enable uniform light distribution and augmented water-cleaning rates. Previous photocatalytic reactors using immersion, external, or distributive lamps suffer from poor light distribution that impedes scalability. Here, we use an external UV-source to direct photons into stacked waveguide reactors where we scatter the photons uniformly over the length of the waveguide to thin films of TiO 2-catalysts. In conclusion, we also show 4.5 times improvement in activity over uniform scatterer designs, demonstrate a degradation of 67% of the organic dye, and characterize themore » degradation rate constant.« less

Coatings for FEL optics: preparation and characterization of B4C and Pt

PubMed Central

Störmer, Michael; Siewert, Frank; Horstmann, Christian; Buchheim, Jana; Gwalt, Grzegorz

2018-01-01

Large X-ray mirrors are required for beam transport at both present-day and future free-electron lasers (FELs) and synchrotron sources worldwide. The demand for large mirrors with lengths up to 1 m single layers consisting of light or heavy elements has increased during the last few decades. Accordingly, surface finishing technology is now able to produce large substrate lengths with micro-roughness on the sub-nanometer scale. At the Helmholtz-Zentrum Geesthacht (HZG), a 4.5 m-long sputtering facility enables us to deposit a desired single-layer material some tens of nanometers thick. For the European XFEL project, the shape error should be less than 2 nm over the whole 1 m X-ray mirror length to ensure the safe and efficient delivery of X-ray beams to the scientific instruments. The challenge is to achieve thin-film deposition on silicon substrates, benders and gratings without any change in mirror shape. Thin films of boron carbide and platinum with a thickness in the range 30–100 nm were manufactured using the HZG sputtering facility. This setup is able to cover areas of up to 1500 mm × 120 mm in one step using rectangular sputtering sources. The coatings produced were characterized using various thin-film methods. It was possible to improve the coating process to achieve a very high uniformity of the layer thickness. The movement of the substrate in front of the sputtering source has been optimized. A variation in B4C layer thickness below 1 nm (peak-to-valley) was achieved at a mean thickness of 51.8 nm over a deposition length of 1.5 m. In the case of Pt, reflectometry and micro-roughness measurements were performed. The uniformity in layer thickness was about 1 nm (peak-to-valley). The micro-roughness of the Pt layers showed no significant change in the coated state for layer thicknesses of 32 nm and 102 nm compared with the uncoated substrate state. The experimental results achieved will be discussed with regard to current restrictions and future developments. PMID:29271760

Coatings for FEL optics: preparation and characterization of B4C and Pt.

PubMed

Störmer, Michael; Siewert, Frank; Horstmann, Christian; Buchheim, Jana; Gwalt, Grzegorz

2018-01-01

Large X-ray mirrors are required for beam transport at both present-day and future free-electron lasers (FELs) and synchrotron sources worldwide. The demand for large mirrors with lengths up to 1 m single layers consisting of light or heavy elements has increased during the last few decades. Accordingly, surface finishing technology is now able to produce large substrate lengths with micro-roughness on the sub-nanometer scale. At the Helmholtz-Zentrum Geesthacht (HZG), a 4.5 m-long sputtering facility enables us to deposit a desired single-layer material some tens of nanometers thick. For the European XFEL project, the shape error should be less than 2 nm over the whole 1 m X-ray mirror length to ensure the safe and efficient delivery of X-ray beams to the scientific instruments. The challenge is to achieve thin-film deposition on silicon substrates, benders and gratings without any change in mirror shape. Thin films of boron carbide and platinum with a thickness in the range 30-100 nm were manufactured using the HZG sputtering facility. This setup is able to cover areas of up to 1500 mm × 120 mm in one step using rectangular sputtering sources. The coatings produced were characterized using various thin-film methods. It was possible to improve the coating process to achieve a very high uniformity of the layer thickness. The movement of the substrate in front of the sputtering source has been optimized. A variation in B 4 C layer thickness below 1 nm (peak-to-valley) was achieved at a mean thickness of 51.8 nm over a deposition length of 1.5 m. In the case of Pt, reflectometry and micro-roughness measurements were performed. The uniformity in layer thickness was about 1 nm (peak-to-valley). The micro-roughness of the Pt layers showed no significant change in the coated state for layer thicknesses of 32 nm and 102 nm compared with the uncoated substrate state. The experimental results achieved will be discussed with regard to current restrictions and future developments.

Indium droplet formation in InGaN thin films with single and double heterojunctions prepared by MOCVD

PubMed Central

2014-01-01

Indium gallium nitride (InGaN) samples with single heterojunction (SH) and double heterojunction (DH) were prepared using metal-organic chemical vapor deposition. SH has a layer of InGaN thin film (thicknesses, 25, 50, 100, and 200 nm) grown on an uGaN film (thickness, 2 μm). The DH samples are distinguished by DH uGaN film (thickness, 120 nm) grown on the InGaN layer. Reciprocal space mapping measurements reveal that the DH samples are fully strained with different thicknesses, whereas the strain in the SH samples are significantly relaxed with the increasing thickness of the InGaN film. Scanning electron microscopy results show that the surface roughness of the sample increases when the sample is relaxed. High-resolution transmission electron microscopy images of the structure of indium droplets in the DH sample indicate that the thickness of the InGaN layer decreases with the density of indium droplets. The formation of these droplets is attributed to the insufficient kinetic energy of indium atom to react with the elements of group V, resulting to aggregation. The gallium atoms in the GaN thin film will not be uniformly replaced by indium atoms; the InGaN thin film has an uneven distribution of indium atoms and the quality of the epitaxial layer is degraded. PMID:25024692

Indium hexagonal island as seed-layer to boost a-axis orientation of AlN thin films

NASA Astrophysics Data System (ADS)

Redjdal, N.; Salah, H.; Azzaz, M.; Menari, H.; Manseri, A.; Guedouar, B.; Garcia-Sanchez, A.; Chérif, S. M.

2018-06-01

Highly a-axis oriented aluminum nitride films have been grown on Indium coated (100) Si substrate by DC reactive magnetron sputtering. It is shown that In incorporated layer improve the extent of preferential growth along (100) axis and form dense AlN films with uniform surface and large grains, devoid of micro-cracks. As revealed by SEM cross section images, AlN structure consists of oriented columnar grains perpendicular to the Si surface, while AlN/In structure results in uniformely tilted column. SEM images also revealed the presence of In hexagonal islands persistent throughout the entire growth. Micro -Raman spectroscopy of the surface and the cross section of the AlN/In grown films evidenced their high degree of homogeneity and cristallinity.

Upgraded flowing liquid lithium limiter for improving Li coverage uniformity and erosion resistance in EAST device

NASA Astrophysics Data System (ADS)

Zuo, G. Z.; Hu, J. S.; Maingi, R.; Yang, Q. X.; Sun, Z.; Huang, M.; Chen, Y.; Yuan, X. L.; Meng, X. C.; Xu, W.; Gentile, C.; Carpe, A.; Diallo, A.; Lunsford, R.; Mansfield, D.; Osborne, T.; Tritz, K.; Li, J. G.

2017-12-01

We report on design and technology improvements for a flowing liquid lithium (FLiLi) limiter inserted into auxiliary heated discharges in the experimental advanced superconducting tokamak device. In order to enhance Li coverage uniformity and erosion resistance, a new liquid Li distributor with homogenous channels was implemented. In addition, two independent electromagnetic pumps and a new horizontal capillary structure contributed to an improvement in the observed Li flow uniformity (from 30% in the previous FLiLi design to >80% in this FLiLi design). To improve limiter surface erosion resistance, hot isostatic press technology was applied, which improved the thermal contact between thin stainless steel protective layers covering the Cu heat sink. The thickness of the stainless steel layer was increased from 0.1 mm to 0.5 mm, which also helped macroscopic erosion resilience. Despite the high auxiliary heating power up to 4.5 MW, no Li bursts were recorded from FLiLi, underscoring the improved performance of this new design.

Growth of Monolayer Graphene on Nanoscale Copper-Nickel Alloy Thin Films

PubMed Central

Cho, Joon Hyong; Gorman, Jason J.; Na, Seung Ryul; Cullinan, Michael

2017-01-01

Growth of high quality and monolayer graphene on copper thin films on silicon wafers is a promising approach to massive and direct graphene device fabrication in spite of the presence of potential dewetting issues in the copper film during graphene growth. Current work demonstrates roles of a nickel adhesion coupled with the copper film resulting in mitigation of dewetting problem as well as uniform monolayer graphene growth over 97 % coverage on films. The feasibility of monolayer graphene growth on Cu-Ni alloy films as thin as 150 nm in total is also demonstrated. During the graphene growth on Cu-Ni films, the nickel adhesion layer uniformly diffuses into the copper thin film resulting in a Cu-Ni alloy, helping to promote graphene nucleation and large area surface coverage. Furthermore, it was found that the use of extremely thin metal catalyst films also constraint the total amount of carbon that can be absorbed into the film during growth, which helps to eliminate adlayer formation and promote monolayer growth regardless of alloying content, thus improving the monolayer fraction of graphene coverage on the thinner films. These results suggest a path forward for the large scale integration of high quality, monolayer graphene into nanoelectronic and nanomechanical devices. PMID:28669999

Effect of thickness on surface morphology, optical and humidity sensing properties of RF magnetron sputtered CCTO thin films

NASA Astrophysics Data System (ADS)

Ahmadipour, Mohsen; Ain, Mohd Fadzil; Ahmad, Zainal Arifin

2016-11-01

In this study, calcium copper titanate (CCTO) thin films were deposited on ITO substrates successfully by radio frequency (RF) magnetron sputtering method in argon atmosphere. The CCTO thin films present a polycrystalline, uniform and porous structure. The surface morphology, optical and humidity sensing properties of the synthesized CCTO thin films have been studied by X-ray diffraction (XRD), atomic force microscopy (AFM), field emission scanning electron microscopy (FESEM), energy-dispersive X-ray spectroscopy (EDX), UV-vis spectrophotometer and current-voltage (I-V) analysis. XRD and AFM confirmed that the intensity of peaks and pore size of CCTO thin films were enhanced by increasing the thin films. Tauc plot method was adopted to estimate the optical band gaps. The surface structure and energy band gaps of the deposited films were affected by film thickness. Energy band gap of the layers were 3.76 eV, 3.68 eV and 3.5 eV for 200 nm, 400 nm, and 600 nm CCTO thin films layer, respectively. The humidity sensing properties were measured by using direct current (DC) analysis method. The response times were 12 s, 22 s, and 35 s while the recovery times were 500 s, 600 s, and 650 s for 200 nm, 400 nm, and 600 nm CCTO thin films, respectively at humidity range of 30-90% relative humidity (RH).

Adaptive Mesh Refinement for Microelectronic Device Design

NASA Technical Reports Server (NTRS)

Cwik, Tom; Lou, John; Norton, Charles

1999-01-01

Finite element and finite volume methods are used in a variety of design simulations when it is necessary to compute fields throughout regions that contain varying materials or geometry. Convergence of the simulation can be assessed by uniformly increasing the mesh density until an observable quantity stabilizes. Depending on the electrical size of the problem, uniform refinement of the mesh may be computationally infeasible due to memory limitations. Similarly, depending on the geometric complexity of the object being modeled, uniform refinement can be inefficient since regions that do not need refinement add to the computational expense. In either case, convergence to the correct (measured) solution is not guaranteed. Adaptive mesh refinement methods attempt to selectively refine the region of the mesh that is estimated to contain proportionally higher solution errors. The refinement may be obtained by decreasing the element size (h-refinement), by increasing the order of the element (p-refinement) or by a combination of the two (h-p refinement). A successful adaptive strategy refines the mesh to produce an accurate solution measured against the correct fields without undue computational expense. This is accomplished by the use of a) reliable a posteriori error estimates, b) hierarchal elements, and c) automatic adaptive mesh generation. Adaptive methods are also useful when problems with multi-scale field variations are encountered. These occur in active electronic devices that have thin doped layers and also when mixed physics is used in the calculation. The mesh needs to be fine at and near the thin layer to capture rapid field or charge variations, but can coarsen away from these layers where field variations smoothen and charge densities are uniform. This poster will present an adaptive mesh refinement package that runs on parallel computers and is applied to specific microelectronic device simulations. Passive sensors that operate in the infrared portion of the spectrum as well as active device simulations that model charge transport and Maxwell's equations will be presented.

A study on the enhancement of opto-electronic properties of CdS thin films: seed-assisted fabrication

NASA Astrophysics Data System (ADS)

Kumarage, W. G. C.; Wijesundera, R. P.; Seneviratne, V. A.; Jayalath, C. P.; Dassanayake, B. S.

2017-04-01

A novel method of fabricating chemical bath deposited CdS thin films (CBD-CdS) by using electrodeposited CdS (ED-CdS) as a seed layer is reported. The resulting thin, compact, uniform and adherent seed-assisted CdS films (ED/CBD-CdS) show enhanced effective surface area compared to both ED-CdS and CBD-CdS. The phase of these CdS films was determined to be hexagonal. The fabricated ED/CBD-CdS films show higher photoelectrochemical (PEC) cell efficiency than either ED-CdS and CBD-CdS thin films. Carrier concentration and flat band potential values for ED/CBD-CdS systems are also found to be superior compared to both ED-CdS and CBD-CdS systems.

Projectile Motion on an Inclined Misty Surface: I. Capturing and Analysing the Trajectory

ERIC Educational Resources Information Center

Ho, S. Y.; Foong, S. K.; Lim, C. H.; Lim, C. C.; Lin, K.; Kuppan, L.

2009-01-01

Projectile motion is usually the first non-uniform two-dimensional motion that students will encounter in a pre-university physics course. In this article, we introduce a novel technique for capturing the trajectory of projectile motion on an inclined Perspex plane. This is achieved by coating the Perspex with a thin layer of fine water droplets…

Optimization of high quality Cu2ZnSnS4 thin film by low cost and environment friendly sol-gel technique for thin film solar cells applications

NASA Astrophysics Data System (ADS)

Chaudhari, J. J.; Joshi, U. S.

2018-05-01

In this study kesterite Cu2ZnSnS4 (CZTS) thin films suitable for absorber layer in thin film solar cells (TFSCs) were successfully fabricated on glass substrate by sol-gel method. The effects of complexing agent on formation of CZTS thin films have been investigated. X-ray diffraction (XRD) analysis confirms formation of polycrystalline CZTS thin films with single phase kesterite structure. XRD and Raman spectroscopy analysis of CZTS thin films with optimized concentration of complexing agent confirmed formation of kesterite phase in CZTS thin films. The direct optical band gap energy of CZTS thin films is found to decrease from 1.82 to 1.50 eV with increase of concentration of complexing agent triethanolamine. Morphological analysis of CZTS thin films shows smooth, uniform and densely packed CZTS grains and increase in the grain size with increase of concentration of complexing agent. Hall measurements revealed that concentration of charge carrier increases and resistivity decreases in CZTS thin films as amount of complexing agent increases.

Hybrid 2D patterning using UV laser direct writing and aerosol jet printing of UV curable polydimethylsiloxane

NASA Astrophysics Data System (ADS)

Obata, Kotaro; Schonewille, Adam; Slobin, Shayna; Hohnholz, Arndt; Unger, Claudia; Koch, Jürgen; Suttmann, Oliver; Overmeyer, Ludger

2017-09-01

The hybrid technique of aerosol jet printing and ultraviolet (UV) laser direct writing was developed for 2D patterning of thin film UV curable polydimethylsiloxane (PDMS). A dual atomizer module in an aerosol jet printing system generated aerosol jet streams from material components of the UV curable PDMS individually and enables the mixing in a controlled ratio. Precise control of the aerosol jet printing achieved the layer thickness of UV curable PDMS as thin as 1.6 μm. This aerosol jet printing system is advantageous because of its ability to print uniform thin-film coatings of UV curable PDMS on planar surfaces as well as free-form surfaces without the use of solvents. In addition, the hybrid 2D patterning using the combination of UV laser direct writing and aerosol jet printing achieved selective photo-initiated polymerization of the UV curable PDMS layer with an X-Y resolution of 17.5 μm.

Justification and refinement of Winkler–Fuss hypothesis

NASA Astrophysics Data System (ADS)

Kaplunov, J.; Prikazchikov, D.; Sultanova, L.

2018-06-01

Two-parametric asymptotic analysis of the equilibrium of an elastic half-space coated by a thin soft layer is developed. The initial scaling is motivated by the exact solution of the plane problem for a vertical harmonic load. It is established that the Winkler-Fuss hypothesis is valid only for a sufficiently high contrast in the stiffnesses of the layer and the half-space. As an alternative, a uniformly valid non-local approximation is proposed. Higher-order corrections to the Winkler-Fuss formulation, such as the Pasternak model, are also studied.

Multiple layer insulation cover

DOEpatents

Farrell, James J.; Donohoe, Anthony J.

1981-11-03

A multiple layer insulation cover for preventing heat loss in, for example, a greenhouse, is disclosed. The cover is comprised of spaced layers of thin foil covered fabric separated from each other by air spaces. The spacing is accomplished by the inflation of spaced air bladders which are integrally formed in the cover and to which the layers of the cover are secured. The bladders are inflated after the cover has been deployed in its intended use to separate the layers of the foil material. The sizes of the material layers are selected to compensate for sagging across the width of the cover so that the desired spacing is uniformly maintained when the cover has been deployed. The bladders are deflated as the cover is stored thereby expediting the storage process and reducing the amount of storage space required.

Parametric Excitation of Marangoni Instability in a Heated Thin Layer Covered by Insoluble Surfactant

NASA Astrophysics Data System (ADS)

Mikishev, Alexander B.; Nepomnyashchy, Alexander A.

2018-05-01

The paper presents the analysis of the impact of vertical periodic vibrations on the long-wavelength Marangoni instability in a liquid layer with poorly conducting boundaries in the presence of insoluble surfactant on the deformable gas-liquid interface. The layer is subject to a uniform transverse temperature gradient. Linear stability analysis is performed in order to find critical values of Marangoni numbers for both monotonic and oscillatory instability modes. Longwave asymptotic expansions are used. At the leading order, the critical values are independent on vibration parameters; at the next order of approximation we obtained the rise of stability thresholds due to vibration.

A Piezoelectroluminescent Fiber-Optical Sensor for Diagnostics of the 3D Stress State in Composite Structures

NASA Astrophysics Data System (ADS)

Pan'kov, A. A.

2018-05-01

The mathematical model of a piezoelectroluminescent fiber-optical sensor is developed for diagnostics of the 3D stress state of composite structures. The sensor model is a coaxial sector-compound layered cylinder consisting of a central optical fiber with electroluminescent and piezoelectric layers and an external uniform elastic buffer layer. The electroluminescent and piezoelectric layers are separated by radial-longitudinal boundaries, common for both layers, into geometrically equal six "measuring elements" — cylindrical two-layered sectors. The directions of 3D polarization of the piezoelectric phases and the frequencies of luminous efficacy of the electroluminescent phases are different in each sector. In the sensor, a thin translucent "internal" controlling electrode is located between the optical fiber and the electroluminescent layer, and the piezoelectric layer is coated by a thin "external" controlling electrode. The results of numerical modeling of the nonuniform coupled electroelastic fields of the piezoelectroluminescent fiber-optical sensor in the loaded "representative volume" of a composite, taking into account the action of the controlling voltage on the internal and external electrodes, of a numerical calculation of "informative and controlling coefficients" of the sensor, and of testing of an arbitrary 3D stress of state of a unidirectional glass-fiber plastic by the finite-element method are presented.

Unusual photoelectric behaviors of Mo-doped TiO2 multilayer thin films prepared by RF magnetron co-sputtering: effect of barrier tunneling on internal charge transfer

NASA Astrophysics Data System (ADS)

Yan, B. X.; Luo, S. Y.; Mao, X. G.; Shen, J.; Zhou, Q. F.

2013-01-01

Mo-doped TiO2 multilayer thin films were prepared by RF magnetron co-sputtering. Microstructures, crystallite parameters and the absorption band were investigated with atomic force microscopy, X-ray diffraction and ultraviolet-visible spectroscopy. Internal carrier transport characteristics and the photoelectric property of different layer-assemble modes were examined on an electrochemical workstation under visible light. The result indicates that the double-layer structure with an undoped surface layer demonstrated a red-shifted absorption edge and a much stronger photocurrent compared to the uniformly doped sample, signifying that the electric field implanted at the interface between particles in different layers accelerated internal charge transfer effectively. However, a heavily doped layer implanted at the bottom of the three-layer film merely brought about negative effects on the photoelectric property, mainly because of the Schottky junction existing above the substrate. Nevertheless, this obstacle was successfully eliminated by raising the Mo concentration to 1020 cm-3, where the thickness of the depletion layer fell into the order of angstroms and the tunneling coefficient manifested a dramatic increase. Under this circumstance, the Schottky junction disappeared and the strongest photocurrent was observed in the three-layer film.

Solution-Processed Cu2ZnSn(S,Se) 4 Thin-Film Solar Cells Using Elemental Cu, Zn, Sn, S, and Se Powders as Source.

PubMed

Guo, Jing; Pei, Yingli; Zhou, Zhengji; Zhou, Wenhui; Kou, Dongxing; Wu, Sixin

2015-12-01

Solution-processed approach for the deposition of Cu2ZnSn (S,Se)4 (CZTSSe) absorbing layer offers a route for fabricating thin film solar cell that is appealing because of simplified and low-cost manufacturing, large-area coverage, and better compatibility with flexible substrates. In this work, we present a simple solution-based approach for simultaneously dissolving the low-cost elemental Cu, Zn, Sn, S, and Se powder, forming a homogeneous CZTSSe precursor solution in a short time. Dense and compact kesterite CZTSSe thin film with high crystallinity and uniform composition was obtained by selenizing the low-temperature annealed spin-coated precursor film. Standard CZTSSe thin film solar cell based on the selenized CZTSSe thin film was fabricated and an efficiency of 6.4 % was achieved.

Study of Sb2S3 thin films deposited by SILAR method

NASA Astrophysics Data System (ADS)

Deshpande, M. P.; Chauhan, Krishna; Patel, Kiran N.; Rajput, Piyush; Bhoi, Hiteshkumar R.; Chaki, S. H.

2018-05-01

In the present work, we deposited Sb2S3 thin films on glass slide by successive ionic layer adsorption and reaction (SILAR) technique with different time cycles. From EDAX, we could observe that the films were non-stoichiometric and contained few elements from glass slide. X-ray diffraction has shown that these films are orthorhombic in structure from where we have calculated the lattice parameter and crystallize size. SEM images shows that SILAR synthesized Sb2S3 thin films are homogenous and well distributed indicating the formation of uniform thin films at lower concentration. The room temperature Raman spectra of Sb2S3 thin films showed sharp peaks at 250 cm‑1 and 300 cm‑1 for all cases. Room temperature photoluminescence emission spectrum shows broad bands over 430–480 nm range with strong blue emission peak centered at same wavelength of 460 nm (2.70 eV) for all cases.

Multimodal method for scattering of sound at a sudden area expansion in a duct with subsonic flow

NASA Astrophysics Data System (ADS)

Kooijman, G.; Testud, P.; Aurégan, Y.; Hirschberg, A.

2008-03-01

The scattering of sound at a sudden area expansion in a duct with subsonic mean flow has been modelled with a multimodal method. Technological applications are for instance internal combustion engine exhaust silencers and silencers in industrial duct systems. Both two-dimensional (2D) rectangular and 2D cylindrical geometry and uniform mean flow as well as non-uniform mean flow profiles are considered. Model results for the scattering of plane waves in case of uniform flow, in which case an infinitely thin shear layer is formed downstream of the area expansion, are compared to results obtained by other models in literature. Generally good agreement is found. Furthermore, model results for the scattering are compared to experimental data found in literature. Also here fairly good correspondence is observed. When employing a turbulent pipe flow profile in the model, instead of a uniform flow profile, the prediction for the downstream transmission- and upstream reflection coefficient is improved. However, worse agreement is observed for the upstream transmission and downstream reflection coefficient. On the contrary, employing a non-uniform jet flow profile, which represents a typical shear layer flow downstream of the expansion, gives worse agreement for the downstream transmission- and the upstream reflection coefficient, whereas prediction for the upstream transmission and downstream reflection coefficient improves.

On computations of the integrated space shuttle flowfield using overset grids

NASA Technical Reports Server (NTRS)

Chiu, I-T.; Pletcher, R. H.; Steger, J. L.

1990-01-01

Numerical simulations using the thin-layer Navier-Stokes equations and chimera (overset) grid approach were carried out for flows around the integrated space shuttle vehicle over a range of Mach numbers. Body-conforming grids were used for all the component grids. Testcases include a three-component overset grid - the external tank (ET), the solid rocket booster (SRB) and the orbiter (ORB), and a five-component overset grid - the ET, SRB, ORB, forward and aft attach hardware, configurations. The results were compared with the wind tunnel and flight data. In addition, a Poisson solution procedure (a special case of the vorticity-velocity formulation) using primitive variables was developed to solve three-dimensional, irrotational, inviscid flows for single as well as overset grids. The solutions were validated by comparisons with other analytical or numerical solution, and/or experimental results for various geometries. The Poisson solution was also used as an initial guess for the thin-layer Navier-Stokes solution procedure to improve the efficiency of the numerical flow simulations. It was found that this approach resulted in roughly a 30 percent CPU time savings as compared with the procedure solving the thin-layer Navier-Stokes equations from a uniform free stream flowfield.

A Classification of Subaqueous Density Flows Based on Transformations From Proximal to Distal Regions

NASA Astrophysics Data System (ADS)

Hermidas, Navid; Eggenhuisen, Joris; Luthi, Stefan; Silva Jacinto, Ricardo; Toth, Ferenc; Pohl, Florian

2017-04-01

Transformations of a subaqueous density flow from proximal to distal regions are investigated. A classification of these transformations based on the state of the free shear and boundary layers and existence of a plug layer during transition from a debris flow to a turbidity current is presented. A connection between the emplaced deposit by the flow and the relevant flow type is drawn through the results obtained from a series of laboratory flume experiments. These were performed using 9%, 15%, and 21% sediment mixture concentrations composed of sand, silt, clay, and tap water, on varying bed slopes of 6°, 8°, and 9.5°, and with discharge rates of 10[m3/h] and 15[m3/h]. Stress-controlled rheometry experiments were performed on the mixtures to obtain apparent viscosity data. A classification was developed based on the imposed flow conditions, where a cohesive flow may fall within one of five distinct flow types: 1) a cohesive plug flow (PF) with a laminar free shear and boundary layers, 2) a top transitional plug flow (TTPF) containing a turbulent free shear layer, a plug layer, and a laminar boundary layer, 3) a complete transitional plug flow (CTPF) consisting of a turbulent free shear and boundary layers and a plug, 4) a transitional turbidity current (TTC) with a turbulent free shear layer and a laminar boundary layer, and, 5) a completely turbulent turbidity current (TC). During the experiments, flow type PF resulted in en masse deposition of a thick uniform ungraded muddy sand mixture, which was emplaced once the yield stress overcame the gravitational forces within the tail region of the flow. Flow type TTPF resulted in deposition of a thin ungraded basal clean sand layer during the run. This layer was covered by a muddy sand deposit from the tail. Flow type TTC did not deposit any sediment during the run. A uniform muddy sand mixture was emplaced by the tail of the flow. Flow type TC resulted in deposition of poorly sorted massive bottom sand layer. This layer was overlain by either a muddy sand mixture or a sand and silt planar lamination. Flow type CTPF was not observed during the experiments. Furthermore, it was observed that flows which are in transition from a TTC to a TTPF result in a thin bottom clean sand layer covered by a banded transitional interval. This was overlain by a muddy sand layer and a very thin clean sand layer, resulting from traction by dilute turbulent wake. In all cases a mud cap was emplaced on top of the deposit after the runs were terminated.

Investigation on single walled carbon nanotube thin films deposited by Langmuir Blodgett method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vishalli,, E-mail: vishalli-2008@yahoo.com; Dharamvir, Keya; Kaur, Ramneek

2015-05-15

Langmuir Blodgett is a technique to deposit a homogeneous film with a fine control over thickness and molecular organization. Thin films of functionalized SWCNTs have been prepared by Langmuir Blodgett method. The good surface spreading properties of SWCNTs at air/water interface are indicated by surface pressure-area isotherm and the monolayer formed on water surface is transferred onto the quartz substrate by vertical dipping. A multilayer film is thus obtained in a layer by layer manner. The film is characterized by Atomic Force Microscope (AFM), UV-Vis-NIR spectroscopy and FTIR.AFM shows the surface morphology of the deposited film. UV-Vis-NIR spectroscopy shows themore » characteristic peaks of semiconducting SWCNTs. The uniformity of LB film can be used further in understanding the optical and electrical behavior of these materials.« less

A Nanopore Structured High Performance Toluene Gas Sensor Made by Nanoimprinting Method

PubMed Central

Kim, Kwang-Su; Baek, Woon-Hyuk; Kim, Jung-Min; Yoon, Tae-Sik; Lee, Hyun Ho; Kang, Chi Jung; Kim, Yong-Sang

2010-01-01

Toluene gas was successfully measured at room temperature using a device microfabricated by a nanoimprinting method. A highly uniform nanoporous thin film was produced with a dense array of titania (TiO2) pores with a diameter of 70∼80 nm using this method. This thin film had a Pd/TiO2 nanoporous/SiO2/Si MIS layered structure with Pd-TiO2 as the catalytic sensing layer. The nanoimprinting method was useful in expanding the TiO2 surface area by about 30%, as confirmed using AFM and SEM imaging. The measured toluene concentrations ranged from 50 ppm to 200 ppm. The toluene was easily detected by changing the Pd/TiO2 interface work function, resulting in a change in the I–V characteristics. PMID:22315567

Biopolymer Green Lubricant for Sustainable Manufacturing

PubMed Central

Shi, Shih-Chen; Lu, Fu-I

2016-01-01

We report on the preparation of a biopolymer thin film by hydroxypropyl methylcellulose (HPMC), which can be used as a dry green lubricant in sustainable manufacturing. The thin films were characterized through scanning electron microscopy, energy-dispersive spectroscopy, and Raman spectroscopy; the films showed desirable levels of thickness, controllability, and uniformity. Tribology tests also showed desirable tribological and antiwear behaviors, caused by the formation of transfer layers. Zebrafish embryo toxicity studies showed that HPMC has excellent solubility and biocompatibility, which may show outstanding potential for applications as a green lubricant. The results of the present study show that these techniques for biopolymer HPMC provide an ecologically responsible and convenient method for preparing functional thin films, which is particularly applicable to sustainable manufacturing. PMID:28773462

Helical Turing patterns in the Lengyel-Epstein model in thin cylindrical layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bánsági, T.; Taylor, A. F., E-mail: A.F.Taylor@sheffield.ac.uk

2015-06-15

The formation of Turing patterns was investigated in thin cylindrical layers using the Lengyel-Epstein model of the chlorine dioxide-iodine-malonic acid reaction. The influence of the width of the layer W and the diameter D of the inner cylinder on the pattern with intrinsic wavelength l were determined in simulations with initial random noise perturbations to the uniform state for W < l/2 and D ∼ l or lower. We show that the geometric constraints of the reaction domain may result in the formation of helical Turing patterns with parameters that give stripes (b = 0.2) or spots (b = 0.37) in two dimensions. For b = 0.2, the helices weremore » composed of lamellae and defects were likely as the diameter of the cylinder increased. With b = 0.37, the helices consisted of semi-cylinders and the orientation of stripes on the outer surface (and hence winding number) increased with increasing diameter until a new stripe appeared.« less

Advanced optical coatings for astronomical instrumentation

NASA Astrophysics Data System (ADS)

Pradal, Fabien; Leplan, Hervé; Vayssade, Hervé; Geyl, Roland

2016-07-01

Recently Safran Reosc worked and progressed on various thin film technology for: Large mirrors with low stress and stable coatings. Large lens elements with strong curvature and precise layer specifications. Large filters with high spectral response uniformity specifications. IR coatings with low stress and excellent resistance to cryogenic environment for NIR to LWIR domains. Pixelated coatings. Results will be presented and discussed on the basis of several examples.

Polyelectrolyte-mediated assembly of copper-phthalocyanine tetrasulfonate multilayers and the subsequent production of nanoparticulate copper oxide thin films.

PubMed

Chickneyan, Zarui Sara; Briseno, Alejandro L; Shi, Xiangyang; Han, Shubo; Huang, Jiaxing; Zhou, Feimeng

2004-07-01

An approach to producing films of nanometer-sized copper oxide particulates, based on polyelectrolyte-mediated assembly of the precursor, copper(II)phthalocyanine tetrasulfonate (CPTS), is described. Multilayered CPTS and polydiallyldimethylammonium chloride (PDADMAC) were alternately assembled on different planar substrates via the layer-by-layer (LbL) procedure. The growth of CPTS multilayers was monitored by UV-visible spectrometry and quartz crystal microbalance (QCM) measurements. Both the UV-visible spectra and the QCM data showed that a fixed amount of CPTS could be attached to the substrate surface for a given adsorption cycle. Cyclic voltammograms at the CPTS/PDADMAC-covered gold electrode exhibited a decrease in peak currents with the layer number, indicating that the permeability of CPTS multilayers on the electrodes had diminished. When these CPTS multilayered films were calcined at elevated temperatures, uniform thin films composed of nanoparticulate copper oxide could be produced. Ellipsometry showed that the thickness of copper oxide nanoparticulate films could be precisely tailored by varying the thickness of CPTS multilayer films. The morphology and roughness of CPTS multilayer and copper oxide thin films were characterized by atomic force microscopy. X-ray diffraction (XRD) measurements indicated that these thin films contained both CuO and Cu2O nanoparticles. The preparation of such copper oxide thin films with the use of metal complex precursors represents a new route for the synthesis of inorganic oxide films with a controlled thickness.

Growth of a delta-doped silicon layer by molecular beam epitaxy on a charge-coupled device for reflection-limited ultraviolet quantum efficiency

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Grunthaner, Paula J.; Grunthaner, Frank J.; Terhune, R. W.; Fattahi, Masoud; Tseng, Hsin-Fu

1992-01-01

Low-temperature silicon molecular beam epitaxy is used to grow a delta-doped silicon layer on a fully processed charge-coupled device (CCD). The measured quantum efficiency of the delta-doped backside-thinned CCD is in agreement with the reflection limit for light incident on the back surface in the spectral range of 260-600 nm. The 2.5 nm silicon layer, grown at 450 C, contained a boron delta-layer with surface density of about 2 x 10 exp 14/sq cm. Passivation of the surface was done by steam oxidation of a nominally undoped 1.5 nm Si cap layer. The UV quantum efficiency was found to be uniform and stable with respect to thermal cycling and illumination conditions.

Enhancement in microstructural and optoelectrical properties of thermally evaporated CdTe films for solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2018-03-01

The optimization of microstructural and optoelectrical properties of a thin layer is an important step prior device fabrication process, so an enhancement in these properties of thermally evaporated CdTe thin films is reported in this communication. The films having thickness 450 nm and 850 nm were deposited on thoroughly cleaned glass and indium tin oxide (ITO) substrates followed by annealing at 450 °C in air atmosphere. These films were characterized for microstructural and optoelectrical properties employing X-ray diffraction, scanning electron microscopy coupled with energy-dispersive spectroscopy, UV-Vis spectrophotometer and source meter. The films found to be have zinc-blende cubic structure with preferred reflection (111) while the crystallographic parameters and direct energy band gap are strongly influenced by the film thickness. The surface morphology studies show that the films are uniform, smooth, homogeneous and nearly dense-packed as well as free from voids and pitfalls as where elemental analysis revealed the presence of Cd and Te element in the deposited films. The electrical analysis showed linear behavior of current with voltage while conductivity is decreased for higher thickness. The results show that the microstructural and optoelectrical properties of CdTe thin layer could be enhanced by varying thickness and films having higher thickness might be processed as promising absorber thin layer to the CdTe-based solar cells.

Binary metal oxide nanoparticle incorporated composite multilayer thin films for sono-photocatalytic degradation of organic pollutants

NASA Astrophysics Data System (ADS)

Gokul, Paramasivam; Vinoth, Ramalingam; Neppolian, Bernaurdshaw; Anandhakumar, Sundaramurthy

2017-10-01

We report reduced graphene oxide (rGO) supported binary metal oxide (CuO-TiO2/rGO) nanoparticle (NP) incorporated multilayer thin films based on Layer-by-Layer (LbL) assembly for enhanced sono-photocatalytic degradation of methyl orange under exposure to UV radiation. Multilayer thin films were fabricated on glass and quartz slides, and investigated using scanning electron microscopy and UV-vis spectroscopy. The loading of catalyst NPs on the film resulted in the change of morphology of the film from smooth to rough with uniformly distributed NPs on the surface. The growth of the control and NP incorporated films followed a linear regime as a function of number of layers. The%degradation of methyl orange as a function of time was investigated by UV-vis spectroscopy and total organic carbon (TOC) measurements. Complete degradation of methyl orange was achieved within 13 h. The amount of NP loading in the film significantly influenced the%degradation of methyl orange. Catalyst reusability studies revealed that the catalyst thin films could be repeatedly used for up to five times without any change in photocatalytic activity of the films. The findings of the present study support that the binary metal oxide catalyst films reported here are very useful for continuous systems, and thus, making it an option for scale up.

Temperature distribution around thin electroconductive layers created on composite textile substrates

NASA Astrophysics Data System (ADS)

Korzeniewska, Ewa; Szczesny, Artur; Krawczyk, Andrzej; Murawski, Piotr; Mróz, Józef; Seme, Sebastian

2018-03-01

In this paper, the authors describe the distribution of temperatures around electroconductive pathways created by a physical vacuum deposition process on flexible textile substrates used in elastic electronics and textronics. Cordura material was chosen as the substrate. Silver with 99.99% purity was used as the deposited metal. This research was based on thermographic photographs of the produced samples. Analysis of the temperature field around the electroconductive layer was carried out using Image ThermaBase EU software. The analysis of the temperature distribution highlights the software's usefulness in determining the homogeneity of the created metal layer. Higher local temperatures and non-uniform distributions at the same time can negatively influence the work of the textronic system.

Upgraded flowing liquid lithium limiter for improving Li coverage uniformity and erosion resistance in EAST device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zuo, G. Z.; Hu, J. S.; Maingi, R.

In this paper, we report on design and technology improvements for a flowing liquid lithium (FLiLi) limiter inserted into auxiliary heated discharges in the experimental advanced superconducting tokamak device. In order to enhance Li coverage uniformity and erosion resistance, a new liquid Li distributor with homogenous channels was implemented. In addition, two independent electromagnetic pumps and a new horizontal capillary structure contributed to an improvement in the observed Li flow uniformity (from 30% in the previous FLiLi design to >80% in this FLiLi design). To improve limiter surface erosion resistance, hot isostatic press technology was applied, which improved the thermalmore » contact between thin stainless steel protective layers covering the Cu heat sink. The thickness of the stainless steel layer was increased from 0.1 mm to 0.5 mm, which also helped macroscopic erosion resilience. Finally, despite the high auxiliary heating power up to 4.5 MW, no Li bursts were recorded from FLiLi, underscoring the improved performance of this new design.« less

Dynamic mask for producing uniform or graded-thickness thin films

DOEpatents

Folta, James A [Livermore, CA

2006-06-13

A method for producing single layer or multilayer films with high thickness uniformity or thickness gradients. The method utilizes a moving mask which blocks some of the flux from a sputter target or evaporation source before it deposits on a substrate. The velocity and position of the mask is computer controlled to precisely tailor the film thickness distribution. The method is applicable to any type of vapor deposition system, but is particularly useful for ion beam sputter deposition and evaporation deposition; and enables a high degree of uniformity for ion beam deposition, even for near-normal incidence of deposition species, which may be critical for producing low-defect multilayer coatings, such as required for masks for extreme ultraviolet lithography (EUVL). The mask can have a variety of shapes, from a simple solid paddle shape to a larger mask with a shaped hole through which the flux passes. The motion of the mask can be linear or rotational, and the mask can be moved to make single or multiple passes in front of the substrate per layer, and can pass completely or partially across the substrate.

Upgraded flowing liquid lithium limiter for improving Li coverage uniformity and erosion resistance in EAST device

DOE PAGES

Zuo, G. Z.; Hu, J. S.; Maingi, R.; ...

2017-12-14

In this paper, we report on design and technology improvements for a flowing liquid lithium (FLiLi) limiter inserted into auxiliary heated discharges in the experimental advanced superconducting tokamak device. In order to enhance Li coverage uniformity and erosion resistance, a new liquid Li distributor with homogenous channels was implemented. In addition, two independent electromagnetic pumps and a new horizontal capillary structure contributed to an improvement in the observed Li flow uniformity (from 30% in the previous FLiLi design to >80% in this FLiLi design). To improve limiter surface erosion resistance, hot isostatic press technology was applied, which improved the thermalmore » contact between thin stainless steel protective layers covering the Cu heat sink. The thickness of the stainless steel layer was increased from 0.1 mm to 0.5 mm, which also helped macroscopic erosion resilience. Finally, despite the high auxiliary heating power up to 4.5 MW, no Li bursts were recorded from FLiLi, underscoring the improved performance of this new design.« less

Natural melanin composites by layer-by-layer assembly

NASA Astrophysics Data System (ADS)

Eom, Taesik; Shim, Bong Sub

2015-04-01

Melanin is an electrically conductive and biocompatible material, because their conjugated backbone structures provide conducting pathways from human skin, eyes, brain, and beyond. So there is a potential of using as materials for the neural interfaces and the implantable devices. Extracted from Sepia officinalis ink, our natural melanin was uniformly dispersed in mostly polar solvents such as water and alcohols. Then, the dispersed melanin was further fabricated to nano-thin layered composites by the layer-by-layer (LBL) assembly technique. Combined with polyvinyl alcohol (PVA), the melanin nanoparticles behave as an LBL counterpart to from finely tuned nanostructured films. The LBL process can adjust the smart performances of the composites by varying the layering conditions and sandwich thickness. We further demonstrated the melanin loading degree of stacked layers, combination nanostructures, electrical properties, and biocompatibility of the resulting composites by UV-vis spectrophotometer, scanning electron microscope (SEM), multimeter, and in-vitro cell test of PC12, respectively.

Optical luminescence studies of diffusion times at the potassium ethyl xanthate adsorption layer on the surface of sphalerite minerals

NASA Astrophysics Data System (ADS)

Todoran, R.; Todoran, D.; Anitas, E. M.; Szakács, Zs

2016-08-01

We propose reflectance measurements as a method for the evaluation of the kinetics of adsorption processes, to compute the diffusion times of the adsorption products at the thin layers formed at the sphalerite natural mineral-potassium ethyl xanthate solution interface. The method is based on the intensity measurement of the reflected monochromatic radiation obtained from the mineral-xanthate thin layer as a function of time. These determinations were made at the thin layer formed between the sphalerite or activated sphalerite natural minerals with potassium ethyl xanthate, for different solutions concentrations and pH values at constant temperature. Diffusion times of desorbed molecular species into the liquid bring important information about the global kinetics of the ions in this phase during adsorption processes at interfaces. Analysing the time dependence of this parameter one concluded on the diffusion properties of the xanthate molecule in the solution depending on its concentration and pH, knowing that at the initial time these molecules had a uniform spread. This method enabled us to determine that, in time interval of approximately 35 minutes to achieve dynamic equilibrium in the formation of the interface layer, one had three different kinetic behaviours of our systems. In the first 5-8 min one had highly adsorbent character, the state of equilibrium is followed by low adsorbent properties. Gaining information on the adsorption kinetics in the case of xanthate on mineral surface leads to the optimization of the industrial froth flotation process.

Influencing factors on the size uniformity of self-assembled SiGe quantum rings grown by molecular beam epitaxy.

PubMed

Cui, J; Lv, Y; Yang, X J; Fan, Y L; Zhong, Z; Jiang, Z M

2011-03-25

The size uniformity of self-assembled SiGe quantum rings, which are formed by capping SiGe quantum dots with a thin Si layer, is found to be greatly influenced by the growth temperature and the areal density of SiGe quantum dots. Higher growth temperature benefits the size uniformity of quantum dots, but results in low Ge concentration as well as asymmetric Ge distribution in the dots, which induces the subsequently formed quantum rings to be asymmetric in shape or even broken somewhere in the ridge of rings. Low growth temperature degrades the size uniformity of quantum dots, and thus that of quantum rings. A high areal density results in the expansion and coalescence of neighboring quantum dots to form a chain, rather than quantum rings. Uniform quantum rings with a size dispersion of 4.6% and an areal density of 7.8×10(8) cm(-2) are obtained at the optimized growth temperature of 640°C.

Ferrule and use thereof for cooling a melt spun hollow glass fiber as it emerges from a spinnerette

DOEpatents

Brown, William E.

1977-01-01

An improvement in the process of melt spinning thin walled, hollow fibers from relatively low melting glasses results if cooling of the emerging fiber is accomplished by use of a thin layer of gas to transfer heat from the fiber to a ferrule which fits closely to the spinnerette face and the individual fiber. The ferrule incorporates or is in contact with a heat sink and is slotted or segmented so that it may be brought into position around the moving fiber. Thinner walled, more uniform fibers may be spun when this method of cooling is employed.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Po-Tsun; Shieh, Han-Ping; Chou, Yi-Teh

This work presents the electrical characteristics of the nitrogenated amorphous InGaZnO thin film transistor (a-IGZO:N TFT). The a-IGZO:N film acting as a channel layer of a thin film transistor (TFT) device was prepared by dc reactive sputter with a nitrogen and argon gas mixture at room temperature. Experimental results show that the in situ nitrogen incorporation to IGZO film can properly adjust the threshold voltage and enhance the ambient stability of a TFT device. Furthermore, the a-IGZO:N TFT has a 44% increase in the carrier mobility and electrical reliability and uniformity also progress obviously while comparing with those not implementingmore » a nitrogen doping process.« less

Porus electrode comprising a bonded stack of pieces of corrugated metal foil

NASA Technical Reports Server (NTRS)

Mccallum, J. (Inventor)

1973-01-01

An electrode suitable for use in an electrochemical cell is described. The electrode is composed of a porous conductive support with a bonded stack of pieces of thin corrugated nickel foil where the corrugations are oriented approximately perpendicular to the sides of the electrode and form an array of passages through the electrode. Active material such as cadmium hydroxide or nickel hydroxide is uniformly distributed within the passages. The support may comprise also a piece of thin flat nickel foil between adjacent pieces of the corrugated foil, forming a barrier between the passages formed on each side of it. Typically the corrugations in the odd corrugated layers are oriented at a small angle from the perpendicular in one direction and the corrugations in the even corrugated layers are oriented at a small angle from the perpendicular in the opposite direction.

Imbibition with swelling: Capillary rise in thin deformable porous media

NASA Astrophysics Data System (ADS)

Kvick, Mathias; Martinez, D. Mark; Hewitt, Duncan R.; Balmforth, Neil J.

2017-07-01

The imbibition of a liquid into a thin deformable porous substrate driven by capillary suction is considered. The substrate is initially dry and has uniform porosity and thickness. Two-phase flow theory is used to describe how the liquid flows through the pore space behind the wetting front when out-of-plane deformation of the solid matrix is considered. Neglecting gravity and evaporation, standard shallow-layer scalings are used to construct a reduced model of the dynamics. The model predicts convergence to a self-similar behavior in all regions except near the wetting front, where a boundary layer arises whose structure narrows with the advance of the front. Over time, the rise height approaches the similarity scaling of t1 /2, as in the classical Washburn or BCLW law. The results are compared with a series of laboratory experiments using cellulose paper sheets, which provide qualitative agreement.

Nonreciprocal dispersion of spin waves in ferromagnetic thin films covered with a finite-conductivity metal

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mruczkiewicz, M.; Krawczyk, M.

2014-03-21

We study the effect of one-side metallization of a uniform ferromagnetic thin film on its spin-wave dispersion relation in the Damon–Eshbach geometry. Due to the finite conductivity of the metallic cover layer on the ferromagnetic film, the spin-wave dispersion relation may be nonreciprocal only in a limited wave-vector range. We provide an approximate analytical solution for the spin-wave frequency, discuss its validity, and compare it with numerical results. The dispersion is analyzed systematically by varying the parameters of the ferromagnetic film, the metal cover layer and the value of the external magnetic field. The conclusions drawn from this analysis allowmore » us to define a structure based on a 30 nm thick CoFeB film with an experimentally accessible nonreciprocal dispersion relation in a relatively wide wave-vector range.« less

Bioactivity and cytocompatibility of zirconia (ZrO(2)) films fabricated by cathodic arc deposition.

PubMed

Liu, Xuanyong; Huang, Anping; Ding, Chuanxian; Chu, Paul K

2006-07-01

Zirconium oxide thin films were fabricated on silicon wafers using a filtered cathodic arc system in concert with oxygen plasma. The structure and phase composition of the zirconium oxide thin films were characterized by atomic force microscopy (AFM), X-ray diffraction (XRD), Rutherford backscattering spectrometry (RBS), and transmission electron microscopy (TEM). The bioactivity was assessed by investigating the formation of apatite on the film surface after soaking in simulated body fluids. Bone marrow mesenchymal stem cells (BMMSC) were used to further evaluate the cytocompatibility of the materials. The results indicate that the films are composed of stoichiometric ZrO(2) and the composition is quite uniform throughout the thickness. Bone-like apatite can be formed on the surface of the ZrO(2) thin film in our SBF immersion experiments, suggesting that the surface is bioactive. The outermost layer of the ZrO(2) thin film comprises nano-sized particles that can be identified by AFM images taken on the thin film surface and TEM micrographs obtained from the interface between the ZrO(2) thin film and apatite layer. The nanostructured surface is believed to be the key factor that apatite is induced to precipitate on the surface. Bone marrow mesenchymal stem cells are observed to grow and proliferate in good states on the film surface. Our results show that ZrO(2) thin films fabricated by cathodic arc deposition exhibit favorable bioactivity and cytocompatibility.

Blending crystalline/liquid crystalline small molecule semiconductors: A strategy towards high performance organic thin film transistors

NASA Astrophysics Data System (ADS)

He, Chao; He, Yaowu; Li, Aiyuan; Zhang, Dongwei; Meng, Hong

2016-10-01

Solution processed small molecule polycrystalline thin films often suffer from the problems of inhomogeneity and discontinuity. Here, we describe a strategy to solve these problems through deposition of the active layer from a blended solution of crystalline (2-phenyl[1]benzothieno[3,2-b][1]benzothiophene, Ph-BTBT) and liquid crystalline (2-(4-dodecylphenyl) [1]benzothieno[3,2-b]benzothiophene, C12-Ph-BTBT) small molecule semiconductors with the hot spin-coating method. Organic thin film transistors with average hole mobility approaching 1 cm2/V s, much higher than that of single component devices, have been demonstrated, mainly due to the improved uniformity, continuity, crystallinity, and stronger intermolecular π-π stacking in blend thin films. Our results indicate that the crystalline/liquid crystalline semiconductor blend method is an effective way to enhance the performance of organic transistors.

The uniformity study of non-oxide thin film at device level using electron energy loss spectroscopy

NASA Astrophysics Data System (ADS)

Li, Zhi-Peng; Zheng, Yuankai; Li, Shaoping; Wang, Haifeng

2018-05-01

Electron energy loss spectroscopy (EELS) has been widely used as a chemical analysis technique to characterize materials chemical properties, such as element valence states, atoms/ions bonding environment. This study provides a new method to characterize physical properties (i.e., film uniformity, grain orientations) of non-oxide thin films in the magnetic device by using EELS microanalysis on scanning transmission electron microscope. This method is based on analyzing white line ratio of spectra and related extended energy loss fine structures so as to correlate it with thin film uniformity. This new approach can provide an effective and sensitive method to monitor/characterize thin film quality (i.e., uniformity) at atomic level for thin film development, which is especially useful for examining ultra-thin films (i.e., several nanometers) or embedded films in devices for industry applications. More importantly, this technique enables development of quantitative characterization of thin film uniformity and it would be a remarkably useful technique for examining various types of devices for industrial applications.

X-ray monochromators for high-power synchrotron radiation sources

NASA Astrophysics Data System (ADS)

Hart, Michael

1990-11-01

Exact solutions to the problems of power flow from a line source of heat into a semicylinder and of uniform heat flow normal to a flat surface are discussed. These lead to bounds on feasible designs and the boundary layer problem can be placed in proper perspective. While finite element calculations are useful if the sample boundaries are predefined, they are much less help in establishing design principles. Previous work on hot beam X-ray crystal optics has emphasised the importance of coolant hydraulics and boundary layer heat transfer. Instead this paper emphasises the importance of the elastic response of crystals to thermal strainfields and the importance of maintaining the Darwin reflectivity. The conclusions of this design study are that the diffracting crystal region should be thin, but not very thin, similar in area to the hot beam footprint, part of a thin-walked buckling crystal box and remote from the support to which the crystal is rigidly clamped. Prototype 111 and 220 cooled silicon crystals tested at the National Synchrotron Light Source at Brookhaven have almost perfect rocking curves under a beam heat load of {1}/{3}kW.

Surface treatment effect on Si (111) substrate for carbon deposition using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aji, A. S., E-mail: aji.ravazes70@gmail.com; Sahdan, M. F.; Hendra, I. B.

In this work, we studied the effect of HF treatment in silicon (111) substrate surface for depositing thin layer carbon. We performed the deposition of carbon by using DC Unbalanced Magnetron Sputtering with carbon pallet (5% Fe) as target. From SEM characterization results it can be concluded that the carbon layer on HF treated substrate is more uniform than on substrate without treated. Carbon deposition rate is higher as confirmed by AFM results if the silicon substrate is treated by HF solution. EDAX characterization results tell that silicon (111) substrate with HF treatment have more carbon fraction than substrate withoutmore » treatment. These results confirmed that HF treatment on silicon Si (111) substrates could enhance the carbon deposition by using DC sputtering. Afterward, the carbon atomic arrangement on silicon (111) surface is studied by performing thermal annealing process to 900 °C. From Raman spectroscopy results, thin film carbon is not changing until 600 °C thermal budged. But, when temperature increase to 900 °C, thin film carbon is starting to diffuse to silicon (111) substrates.« less

Geometrical Effects in Noise Spectra of Superconducting Flux Qubits

NASA Astrophysics Data System (ADS)

Petukhov, Andre; Smelyanskiy, Vadim; Martinis, John

We present theoretical study of geometrical effects related to spin diffusion in superconducting flux qubits. We adopt a model of a long superconducting wire surrounded by a thin oxide layer with spins distributed uniformly over cross-sectional area of the oxide layer. Using a continuous transformation from a round cylinder to a flat wire strip, we demonstrate that the noise spectral density tends to a power law S (ω) ~(ω / Γ) - s with s 3 / 4 , approaching s = 3 / 4 for very thin wires. The ω-s dependence is valid in a broad frequency range above ωΓ stretching up to four orders of magnitude in units of characteristic diffusion decay rate Γ ~ 1 -102 Hz. The effect is highly sensitive to a cross-sectional aspect ratio of a thin wire thus revealing its geometrical origin. We substantiate our findings by detailed comparison with available experimental data and conclude that 3 / 4 power law distinguishes spin diffusion flux noise from generic `` 1 / f '' family. Supported by the AFRL Information Directorate under Grant F4HBKC4162G001.

Aqueous chemical growth of alpha-Fe2O3-alpha-Cr203 nanocompositethin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vayssieres, Lionel; Guo, Jinghua; Nordgren, Joseph

2001-06-30

We are reporting here on the inexpensive fabrication and optical properties of an iron(III) oxide chromium(III) oxide nanocomposite thin film of corundum crystal structure. Its novel and unique-designed architecture consists of uniformed, well-defined and oriented nanorods of Hematite (alpha-Fe2O3) of 50 nm in diameter and 500nm in length and homogeneously distributed nonaggregated monodisperse spherical nanoparticles of Eskolaite (alpha-Cr2O3) of 250 nm in diameter. This alpha-Fe2O3 alpha-Cr2O3 nanocomposite thin film is obtained by growing, directly onto transparent polycrystalline conducting substrate, an oriented layer of hematite nanorods and growing subsequently, the eskolaite layer. The synthesis is carried out by a template-free, low-temperature,more » multilayer thin film coating process using aqueous solution of metal salts as precursors. Almost 100 percent of the light is absorbed by the composite film between 300 and 525 nm and 40 percent at 800 nm which yields great expectations as photoanode materials for photovoltaic cells and photocatalytic devices.« less

Sporadic-E As Observed with Rockets

NASA Technical Reports Server (NTRS)

Seddon, J. Carl

1961-01-01

Data obtained with rockets flown over New Mexico, U.S.A. and Manitoba, Canada have always shown the sporadic-E layer to be a thin layer with a large electron density gradient. The vertical electron density profiles and the horizontal uniformity of the sporadic-E layer are discussed herein. These layers have a strong tendency to form at preferential altitudes separated by approximately 6 km, and a striking correlation exists with wind- shears and magnetic field variations. In two cases where comparisons with ionograms were possible, the minimum frequency of the F-region echoes was found approximately equal to the plasma frequency of the sporadic-E layer reduced by half the gyrofrequency. On the other hand, the maximum frequency of the sporadic-E echoes as noted on ionograms was sometimes as much as 1 to 2 Mc greater than the plasma frequency.

Processing and Characterization of Thin Cadmium Telluride Solar Cells

NASA Astrophysics Data System (ADS)

Wojtowicz, Anna

Cadmium telluride (CdTe) has the highest theoretical limit to conversion efficiency of single-junction photovoltaic (PV) technologies today. However, despite a maximum theoretical open-circuit voltage of 1.20 V, record devices have historically had voltages pinned around only 900 mV. Voltage losses due to high recombination rates remains to be the most complex hurdle to CdTe technology today, and the subject of on-going research in the physics PV group at Colorado State University. In this work, an ultrathin CdTe device architecture is proposed in an effort to reduce bulk recombination and boost voltages. By thinning the CdTe layer, a device's internal electric field extends fully towards the back contact. This quickly separates electrons-hole pairs throughout the bulk of the device and reduces overall recombination. Despite this advantage, very thin CdTe layers also present a unique set of optical and electrical challenges which result in performance losses not as prevalent in thicker devices. When fabricating CdTe solar cells, post-deposition treatments applied to the absorber layer are a critical step for achieving high efficiency devices. Exposure of the polycrystalline CdTe film to a chlorine species encourages the passivation of dangling bonds and larger grain formation, while copper-doping improves device uniformity and voltages. This work focuses on experiments conducted via close-space sublimation to optimize CdCl2 and CuCl treatments for thin CdTe solar cells. Sweeps of both exposure and anneal time were performed for both post-deposition treatments on CdTe devices with 1.0 mum absorber layers. The results demonstrate that thin CdTe devices require substantially less post-deposition processing than standard thicker devices as expected. Additionally, the effects of CdTe growth temperature on thin devices is briefly investigated. The results suggest that higher growth temperatures lead to both electrical and stoichiometric changes in CdTe closely associated with lower carrier lifetimes and poorer overall performance.

Generalized radiative transfer theory for scattering by particles in an absorbing gas: Addressing both spatial and spectral integration in multi-angle remote sensing of optically thin aerosol layers

NASA Astrophysics Data System (ADS)

Davis, Anthony B.; Xu, Feng; Diner, David J.

2018-01-01

We demonstrate the computational advantage gained by introducing non-exponential transmission laws into radiative transfer theory for two specific situations. One is the problem of spatial integration over a large domain where the scattering particles cluster randomly in a medium uniformly filled with an absorbing gas, and only a probabilistic description of the variability is available. The increasingly important application here is passive atmospheric profiling using oxygen absorption in the visible/near-IR spectrum. The other scenario is spectral integration over a region where the absorption cross-section of a spatially uniform gas varies rapidly and widely and, moreover, there are scattering particles embedded in the gas that are distributed uniformly, or not. This comes up in many applications, O2 A-band profiling being just one instance. We bring a common framework to solve these problems both efficiently and accurately that is grounded in the recently developed theory of Generalized Radiative Transfer (GRT). In GRT, the classic exponential law of transmission is replaced by one with a slower power-law decay that accounts for the unresolved spectral or spatial variability. Analytical results are derived in the single-scattering limit that applies to optically thin aerosol layers. In spectral integration, a modest gain in accuracy is obtained. As for spatial integration of near-monochromatic radiance, we find that, although both continuum and in-band radiances are affected by moderate levels of sub-pixel variability, only extreme variability will affect in-band/continuum ratios.

Polyelectrolyte Multilayer-Treated Electrodes for Real-Time Electronic Sensing of Cell Proliferation

PubMed Central

Mijares, Geraldine I.; Reyes, Darwin R.; Geist, Jon; Gaitan, Michael; Polk, Brian J.; DeVoe, Don L.

2010-01-01

We report on the use of polyelectrolyte multilayer (PEM) coatings as a non-biological surface preparation to facilitate uniform cell attachment and growth on patterned thin-film gold (Au) electrodes on glass for impedance-based measurements. Extracellular matrix (ECM) proteins are commonly utilized as cell adhesion promoters for electrodes; however, they exhibit degradation over time, thereby imposing limitations on the duration of conductance-based biosensor experiments. The motivation for the use of PEM coatings arises from their long-term surface stability as promoters for cell attachment, patterning, and culture. In this work, a cell proliferation monitoring device was fabricated. It consisted of thin-film Au electrodes deposited with a titanium-tungsten (TiW) adhesion layer that were patterned on a glass substrate and passivated to create active electrode areas. The electrode surfaces were then treated with a poly(ethyleneimine) (PEI) anchoring layer and subsequent bilayers of sodium poly(styrene sulfonate) (PSS) and poly(allylamine hydrochloride) (PAH). NIH-3T3 mouse embryonic fibroblast cells were cultured on the device, observed by optical microscopy, and showed uniform growth characteristics similar to those observed on a traditional polystyrene cell culture dish. The optical observations were correlated to electrical measurements on the PEM-treated electrodes, which exhibited a rise in impedance with cell proliferation and stabilized to an approximate 15 % increase as the culture approached confluency. In conclusion, cells proliferate uniformly over gold and glass PEM-treated surfaces, making them useful for continuous impedance-based, real-time monitoring of cell proliferation and for the determination of cell growth rate in cellular assays. PMID:27134780

Synchrotron X-ray diffraction investigations on strains in the oxide layer of an irradiated Zircaloy fuel cladding

NASA Astrophysics Data System (ADS)

Chollet, Mélanie; Valance, Stéphane; Abolhassani, Sousan; Stein, Gene; Grolimund, Daniel; Martin, Matthias; Bertsch, Johannes

2017-05-01

For the first time the microstructure of the oxide layer of a Zircaloy-2 cladding after 9 cycles of irradiation in a boiling water reactor has been analyzed with synchrotron micro-X-ray diffraction. Crystallographic strains of the monoclinic and to some extent of the tetragonal ZrO2 are depicted through the thick oxide layer. Thin layers of sub-oxide at the oxide-metal interface as found for autoclave-tested samples and described in the literature, have not been observed in this material maybe resulting from irradiation damage. Shifts of selected diffraction peaks of the monoclinic oxide show that the uniform strain produced during oxidation is orientated in the lattice and displays variations along the oxide layer. Diffraction peaks and their shifts from families of diffracting planes could be translated into a virtual tensor. This virtual tensor exhibits changes through the oxide layer passing by tensile or compressive components.

Micromagnetic modeling of the shielding properties of nanoscale ferromagnetic layers

NASA Astrophysics Data System (ADS)

Iskandarova, I. M.; Knizhnik, A. A.; Popkov, A. F.; Potapkin, B. V.; Stainer, Q.; Lombard, L.; Mackay, K.

2016-09-01

Ferromagnetic shields are widely used to concentrate magnetic fields in a target region of space. Such shields are also used in spintronic nanodevices such as magnetic random access memory and magnetic logic devices. However, the shielding properties of nanostructured shields can differ considerably from those of macroscopic samples. In this work, we investigate the shielding properties of nanostructured NiFe layers around a current line using a finite element micromagnetic model. We find that thin ferromagnetic layers demonstrate saturation of magnetization under an external magnetic field, which reduces the shielding efficiency. Moreover, we show that the shielding properties of nanoscale ferromagnetic layers strongly depend on the uniformity of the layer thickness. Magnetic anisotropy in ultrathin ferromagnetic layers can also influence their shielding efficiency. In addition, we show that domain walls in nanoscale ferromagnetic shields can induce large increases and decreases in the generated magnetic field. Therefore, ferromagnetic shields for spintronic nanodevices require careful design and precise fabrication.

WE-E-18A-01: Large Area Avalanche Amorphous Selenium Sensors for Low Dose X-Ray Imaging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scheuermann, J; Goldan, A; Zhao, W

2014-06-15

Purpose: A large area indirect flat panel imager (FPI) with avalanche gain is being developed to achieve x-ray quantum noise limited low dose imaging. It uses a thin optical sensing layer of amorphous selenium (a-Se), known as High-Gain Avalanche Rushing Photoconductor (HARP), to detect optical photons generated from a high resolution x-ray scintillator. We will report initial results in the fabrication of a solid-state HARP structure suitable for a large area FPI. Our objective is to establish the blocking layer structures and defect suppression mechanisms that provide stable and uniform avalanche gain. Methods: Samples were fabricated as follows: (1) ITOmore » signal electrode. (2) Electron blocking layer. (3) A 15 micron layer of intrinsic a-Se. (4) Transparent hole blocking layer. (5) Multiple semitransparent bias electrodes to investigate avalanche gain uniformity over a large area. The sample was exposed to 50ps optical excitation pulses through the bias electrode. Transient time of flight (TOF) and integrated charge was measured. A charge transport simulation was developed to investigate the effects of varying blocking layer charge carrier mobility on defect suppression, avalanche gain and temporal performance. Results: Avalanche gain of ∼200 was achieved experimentally with our multi-layer HARP samples. Simulations using the experimental sensor structure produced the same magnitude of gain as a function of electric field. The simulation predicted that the high dark current at a point defect can be reduced by two orders of magnitude by blocking layer optimization which can prevent irreversible damage while normal operation remained unaffected. Conclusion: We presented the first solid state HARP structure directly scalable to a large area FPI. We have shown reproducible and uniform avalanche gain of 200. By reducing mobility of the blocking layers we can suppress defects and maintain stable avalanche. Future work will optimize the blocking layers to prevent lag and ghosting.« less

A thin porous substrate using bonded particles for reverse-emulsion electrophoretic displays

NASA Astrophysics Data System (ADS)

Ahumada, M.; Bryning, M.; Cromer, R.; Hartono, M.; Lee, S. J.

2012-03-01

A thin porous layer of bonded ceramic microparticles has been developed to provide structural integrity and a stationary matrix for use in reflective-mode reverse-emulsion electrophoretic displays (REED), based on self-assembled nanodroplets dispersed in a non-polar liquid. REED ink uses low-cost materials and manufacturing processes, yet is capable of video speed and low voltage operation below 10 V. Porous layers of titanium dioxide (TiO2) are prepared as thin as 10 microns by fluidizing the particles in a water-based slurry with polymeric adhesive. The slurry is distributed between glass shear plates, one of which serves as the substrate for the working device. Particle morphology is examined using scanning electron microscopy and layer uniformity is characterized by opacity measurements using a throughbeam fiber optic sensor. Performance of the bonded matrix with REED ink is compared to baseline performance of a paste mixture, comprised of the same ink and unbonded TiO2 particles. Results show that at 25% volume fraction, the bonded substrate improves image bistability and is better able to maintain both light and dark intensity after extensive switching. The same bonded substrate also improves image bistability when power is disconnected, even compared to a paste with 40% volume fraction of TiO2.

Chelant Enhanced Solution Processing for Wafer Scale Synthesis of Transition Metal Dichalcogenide Thin Films.

PubMed

Ionescu, Robert; Campbell, Brennan; Wu, Ryan; Aytan, Ece; Patalano, Andrew; Ruiz, Isaac; Howell, Stephen W; McDonald, Anthony E; Beechem, Thomas E; Mkhoyan, K Andre; Ozkan, Mihrimah; Ozkan, Cengiz S

2017-07-25

It is of paramount importance to improve the control over large area growth of high quality molybdenum disulfide (MoS 2 ) and other types of 2D dichalcogenides. Such atomically thin materials have great potential for use in electronics, and are thought to make possible the first real applications of spintronics. Here in, a facile and reproducible method of producing wafer scale atomically thin MoS 2 layers has been developed using the incorporation of a chelating agent in a common organic solvent, dimethyl sulfoxide (DMSO). Previously, solution processing of a MoS 2 precursor, ammonium tetrathiomolybdate ((NH 4 ) 2 MoS 4 ), and subsequent thermolysis was used to produce large area MoS 2 layers. Our work here shows that the use of ethylenediaminetetraacetic acid (EDTA) in DMSO exerts superior control over wafer coverage and film thickness, and the results demonstrate that the chelating action and dispersing effect of EDTA is critical in growing uniform films. Raman spectroscopy, photoluminescence (PL), x-ray photoelectron spectroscopy (XPS), Fourier transform infrared spectroscopy (FTIR), atomic force microscopy (AFM) and high-resolution scanning transmission electron microscopy (HR-STEM) indicate the formation of homogenous few layer MoS 2 films at the wafer scale, resulting from the novel chelant-in-solution method.

Effects of working pressure and annealing on bulk density and nanopore structures in amorphous In-Ga-Zn-O thin-film transistors

NASA Astrophysics Data System (ADS)

Ide, Keisuke; Kikuchi, Mitsuho; Ota, Masato; Sasase, Masato; Hiramatsu, Hidenori; Kumomi, Hideya; Hosono, Hideo; Kamiya, Toshio

2017-03-01

Microstructures of amorphous In-Ga-Zn-O (a-IGZO) thin films of different densities were analyzed. Device-quality a-IGZO films were deposited under optimum conditions, e.g., the total pressure P tot = 0.55 Pa produced high film densities of ˜6.1 g/cm3, while a very high P tot = 5.0 Pa produced low film densities of 5.5 g/cm3. Both films formed uniform high-density layers in the vicinity of the glass substrate, 10-20 nm in thickness depending on P tot, while their growth mode changed to a sparse columnar structure in thicker regions. X-ray reflectivity and in situ spectroscopic ellipsometry provided different results on densification by post deposition thermal annealing; i.e., the latter has a higher sensitivity. High-Z-contrast images obtained by high-angle annular dark-field scanning transmission electron microscopy were also useful for detecting nanometer-size non uniformity even in device-quality a-IGZO films.

Synthesis of Large-area Crystalline MoTe2 Atomic layer from Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Zhou, Lin; Zubair, Ahmad; Xu, Kai; Kong, Jing; Dresselhaus, Mildred

The controlled synthesis of highly crystalline large-area molybdenum ditelluride MoTe2 atomic layers is crucial for the practical applications of this emerging material. Here we develop a novel approach for the growth of large-area, uniform and highly crystalline few-layer MoTe2 film via chemical vapour deposition (CVD). Large-area atomically thin MoTe2 film has been successfully synthesized by tellurization of a MoO3 film. The as-grown MoTe2 film is uniform, stoichiometric, and highly crystalline. As a result of the high crystallinity, the electronic properties of MoTe2 film are comparable with that of mechanically exfoliated MoTe2 flakes. Moreover, we found that two different phases of MoTe2 (2H and 1T') can be grown depending on the choice of Mo precursor. Since the MoTe2 film is highly homogenous, and the size of the film is only limited by the substrate and CVD system size, our growth method paves the way for large-scale application of MoTe2 in high performance nanoelectronics and optoelectronics.

Design and fabrication of metal-insulator-metal diode for high frequency applications

NASA Astrophysics Data System (ADS)

Azad, Ibrahim; Ram, Manoj K.; Goswami, D. Yogi; Stefanakos, Elias

2017-02-01

Metal-insulator-metal (MIM) diodes play significant role in high speed electronics where high frequency rectification is needed. Quantum based tunneling mechanism helps MIM diodes to rectify at high frequency signals. Rectenna, antenna coupled MIM diodes are becoming popular due to their potential use as IR detectors and energy harvesters. Because of small active area, MIM diodes could easily be incorporated into integrated circuits (IC's). The objective of the work is to design and develop MIM diodes for high frequency rectification. In this work, thin insulating layer of ZnO was fabricated using Langmuir-Blodgett (LB) technique which facilitates ultrathin thin, uniform and pinhole free fabrication of insulating layer. The ZnO layer was synthesized from organic precursor of zinc acetate layer. The optimization in the LB technique of fabrication process led to fabricate MIM diodes with high non-linearity and sensitivity. Moreover, the top and bottom electrodes as well as active area of the diodes were patterned using UV-tunneling conduction mechanism. The highest sensitivity of the diode was measured around 37 (A/W), and the rectification ratio was found around 36 under low applied bias at +/-100 mV.

Self-assembly Columnar Structure in Active Layer of Bulk Heterojunction Solar Cell

NASA Astrophysics Data System (ADS)

Pan, Cheng; Segui, Jennifer; Yu, Yingjie; Li, Hongfei; Akgun, Bulent; Satijia, Sushil. K.; Gersappe, Dilip; Nam, Chang-Yong; Rafailovich, Miriam

2012-02-01

Bulk Heterojunction (BHJ) polymer solar cells are an area of intense interest due to their flexibility and relatively low cost. However, due to the disordered inner structure in active layer, the power conversion efficiency of BHJ solar cell is relatively low. Our research provides the method to produce ordered self-assembly columnar structure within active layer of bulk heterojunction (BHJ) solar cell by introducing polystyrene (PS) into the active layer. The blend thin film of polystyrene, poly (3-hexylthiophene-2,5-diyl) (P3HT) and [6,6]-phenyl C61 butyric acid methyl ester (PCBM) at different ratio are spin coated on substrate and annealed in vacuum oven for certain time. Atomic force microscopy (AFM) images show uniform phase segregation on the surface of polymer blend thin film and highly ordered columnar structure is then proven by etching the film with ion sputtering. TEM cross-section technology is also used to investigate the column structure. Neutron reflectometry was taken to establish the confinement of PCBM at the interface of PS and P3HT. The different morphological structures formed via phase segregation will be correlated with the performance of the PEV cells to be fabricated at the BNL-CFN.

International Workshop on Magneto-Plasma Aerodynamics (8th)

DTIC Science & Technology

2010-05-14

outer conductor of coaxial waveguide. (b) (1 − 3) − different positions of a plasma channel in nonsteady-state plasmatron. The microwave power is...out at MIPT. Nanosecond DBD discharge in a special coaxial geometry of electrodes was used to produce a thin layer of quasi-uniform plasma in the...discharge cell, diagnostics means, high-voltage sources and commutation units. Cell commutation was effected by a plasma gun actuated by a start unit

Effect of pre-drying treatments on solution-coated organic thin films for active-matrix organic light-emitting diodes

NASA Astrophysics Data System (ADS)

Shin, Dongkyun; Hong, Ki-Young; Park, Jongwoon

2017-12-01

Due to capillary rise, organic thin films fabricated by solution coating exhibit the concave thickness profile. It is found that the thickness and emission uniformities within pixels vary depending sensitively on the pre-drying treatment that has been done before hard bake. We investigate its effect on the film quality by varying the temperature, time, pressure, fluid flow-related solute concentration, and evaporation-related solvent. To this end, we carry out spin coatings of a non-aqueous poly(N-vinylcarbazole) (PVK) for a hole transporting blanket layer. With a low-boiling-point (BP) organic solvent, the pre-drying makes no significant impact on the thickness profiles. With a high-BP organic solvent, the PVK films pre-dried in a vacuum for a sufficient time exhibit very uniform light emission in the central region, but non-emission phenomenon near the perimeter of pixels. It is addressed that such a non-emission phenomenon can be suppressed to some extent by decreasing the vacuum pressure. However, the rapid evaporation by heat conduction during the pre-drying degrades the thickness uniformity due to a rapid microflow of solute from the edge to the center. No further enhancement in the thickness uniformity is obtained by varying the solute concentration and using a mixture of low- and high-BP solvents.

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers

NASA Astrophysics Data System (ADS)

Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

2018-05-01

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer ( 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm2/V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

Substrate solder barriers for semiconductor epilayer growth

DOEpatents

Drummond, Timothy J.; Ginley, David S.; Zipperian, Thomas E.

1989-01-01

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Substrate solder barriers for semiconductor epilayer growth

DOEpatents

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1989-05-09

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In modular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substrate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating.

Substrate solder barriers for semiconductor epilayer growth

DOEpatents

Drummond, T.J.; Ginley, D.S.; Zipperian, T.E.

1987-10-23

During the growth of compound semiconductors by epitaxial processes, substrates are typically mounted to a support. In molecular beam epitaxy, mounting is done using indium as a solder. This method has two drawbacks: the indium reacts with the substrate, and it is difficult to uniformly wet the back of a large diameter substrate. Both of these problems have been successfully overcome by sputter coating the back of the substrate with a thin layer of tungsten carbide or tungsten carbide and gold. In addition to being compatible with the growth of high quality semiconductor epilayers this coating is also inert in all standard substate cleaning etchants used for compound semiconductors, and provides uniform distribution of energy in radiant heating. 1 tab.

Fabrication and electrical properties of low temperature-processed thin-film-transistors with chemical-bath deposited ZnO layer.

PubMed

Ahn, Joo-Seob; Kwon, Ji-Hye; Yang, Heesun

2013-06-01

ZnO film was grown on ZnO quantum dot seed layer-coated substrate by a low-temperature chemical bath deposition, where sodium citrate serves as a complexing agent for Zn2+ ion. The ZnO film deposited under the optimal condition exhibited a highly uniform surface morphology with a thickness of approimately 30 nm. For the fabrication of thin-film-transistor with a bottom-gate structure, ZnO film was chemically deposited on the transparent substrate of a seed layer-coated SiN(x)/ITO (indium tin oxide)/glass. As-deposited ZnO channel was baked at low temperatures of 60-200 degrees C to investigate the effect of baking temperature on electrical performances. Compared to the device with 60 degrees C-baked ZnO channel, the TFT performances of one with 200 degrees C-baked channel were substantially improved, exhibiting an on-off current ratio of 3.6 x 10(6) and a saturated field-effect mobility of 0.27 cm2/V x s.

Novel processing to produce polymer/ceramic nanocomposites by atomic layer deposition

NASA Astrophysics Data System (ADS)

Liang, Xinhua

Polymeric materials can be greatly influenced by nanoscale inclusions of inorganic materials. The main goal of this thesis is to fabricate novel polymer/ceramic composite materials for two different applications using atomic layer deposition (ALD) or molecular layer deposition (MLD) methods. One is to produce well-dispersed polymer/ceramic nanocomposites with improved barrier properties for packaging applications. The other is to produce porous polymer/ceramic composites with improved bioactivity for tissue engineering applications. ALD has been successfully utilized for the conformal and uniform deposition of ultra-thin alumina and titania films on primary micron-sized polymer particles. The mechanism to initiate alumina and titania ALD on polymer particles without chemical functional groups was confirmed. A nucleation period was needed for both alumina and titania ALD on high density polyethylene (HDPE) particles and no nucleation period was needed for alumina ALD on polymethyl methacrylate particles. Titania ALD films deposited at low temperatures had an amorphous structure and showed much weaker photoactivity than common pigment-grade anatase TiO2 particles. Highly uniform and conformal ultra-thin aluminum alkoxide (alucone) polymer films were deposited on primary silica and titania nanoparticles using MLD in a fluidized bed reactor. The deposition chemistry and properties of alucone MLD films were investigated. The photoactivity of pigment-grade TiO2 particles was quenched after 20 cycles of an alucone MLD film, but the films shrank and decomposed in the presence of water, which decreased the passivation effect of the photoactivity of TiO2 particles. Well-dispersed polymer/ceramic nanocomposites were obtained by extruding alumina ALD coated HDPE particles. The diffusion coefficient of the fabricated nanocomposite membranes can be reduced by half with the inclusion of 7.3 vol.% alumina flakes. However, a corresponding increase in permeability was also observed due to the voids formed at or near the interface of the polymer and alumina flakes during the extrusion process. Efforts to improve the barrier properties of the membranes included 3-aminopropyltriethoxysilane treatment and coating alucone MLD films on alumina coated particles prior to extrusion. The porous polymer/ceramic particles were synthesized by depositing ultra-thin alumina or titania films on highly porous poly(styrene-divinylbenzene) particles using a low-temperature ALD process. Analytical characterization revealed that conformal alumina and titania films were grown on internal and external polymer particle surfaces, and the pore filling mechanism was a uniform coating of the pore walls. The ALD layers can improve the bioactivity and protein adsorption of the polymer substrates.

Thickness Dependent Structural and Dielectric Properties of Calcium Copper Titanate Thin Films Produced by Spin-Coating Method for Microelectronic Devices

NASA Astrophysics Data System (ADS)

Thiruramanathan, P.; Sankar, S.; Marikani, A.; Madhavan, D.; Sharma, Sanjeev K.

2017-07-01

Calcium copper titanate (CaCu3Ti4O12, CCTO) thin films have been deposited on platinized silicon [(111)Pt/Ti/SiO2/Si] substrate through a sol-gel spin coating technique and annealed at 600-900°C with a variation of 100°C per sample for 3 h. The activation energy for crystalline growth, as well as optimal annealing temperature (900°C) of the CCTO crystallites was studied by x-ray diffraction analysis (XRD). Thickness dependent structural, morphological, and optical properties of CCTO thin films were observed. The field emission scanning electron microscopy (FE-SEM) verified that the CCTO thin films are uniform, fully covered, densely packed, and the particle size was found to be increased with film thickness. Meanwhile, quantitative analysis of dielectric properties (interfacial capacitance, dead layers, and bulk dielectric constant) of CCTO thin film with metal-insulator-metal (M-I-M) structures has been investigated systematically using a series capacitor model. Room temperature dielectric properties of all the samples exhibit dispersion at low frequencies, which can be explained based on Maxwell-Wagner two-layer models and Koop's theory. It was found that the 483 nm thick CCTO film represents a high dielectric constant ( ɛ r = 3334), low loss (tan δ = 3.54), capacitance ( C = 4951 nF), which might satisfy the requirements of embedded capacitor.

A gallium phosphide high-temperature bipolar junction transistor

NASA Technical Reports Server (NTRS)

Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

1981-01-01

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

Time dependence of carbon film deposition on SnO{sub 2}/Si using DC unbalanced magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfiadi, H., E-mail: yudi@fi.itb.ac.id; Aji, A. S., E-mail: yudi@fi.itb.ac.id; Darma, Y., E-mail: yudi@fi.itb.ac.id

Carbon deposition on SnO{sub 2} layer has been demonstrated at low temperature using DC unbalanced magnetron-sputtering technique for various time depositions. Before carbon sputtering process, SnO{sub 2} thin layer is grown on silicon substrate by thermal evaporation method using high purity Sn wire and then fully oxidizes by dry O{sub 2} at 225°C. Carbon sputtering process was carried out at pressure of 4.6×10{sup −2} Torr by keeping the substrate temperature of 300 °C for sputtering deposition time of 1 to 4 hours. The properties of SnO{sub 2}/Si structure and carbon thin film on SnO{sub 2} is characterized using SEM, EDAX,more » XRD, FTIR, and Raman Spectra. SEM images and XRD spectra show that SnO2 thin film has uniformly growth on Si substrate and affected by annealing temperature. Raman and FTIR results confirm the formation of carbon-rich thin film on SnO{sub 2}. In addition, XRD spectra indicate that some structural change occur by increasing sputtering deposition time. Furthermore, the change of atomic structure due to the thermal annealing is analized by XRD spectra and Raman spectroscopy.« less

Red Light Emitting Schottky Diodes on p-TYPE GaN/AlN/Si(111) Substrate

NASA Astrophysics Data System (ADS)

Chuah, L. S.; Hassan, Z.; Abu Hassan, H.

High quality GaN layers doped with Mg were grown on Si(111) substrates using high temperature AlN as buffer layer by radio-frequency molecular beam epitaxy. From the Hall measurements, fairly uniform high hole concentration as high as (4-5) × 1020 cm-3 throughout the GaN was achieved. The fabrication of the device is very simple. Nickel ohmic contacts and Schottky contacts using indium were fabricated on Mg-doped p-GaN films. The light emission has been obtained from these thin film electroluminescent devices. Thin film electroluminescent devices were operated under direct current bias. Schottky and ohmic contacts used as cathode and anode were employed in these investigations. Alternatively, two Schottky contacts could be probed as cathode and anode. Thin film electroluminescent devices were able to emit light. However, electrical and optical differences could be observed from the two different probing methods. The red light color could be observed when the potential between the electrodes was increased gradually under forward bias of 8 V at room temperature. Electrical properties of these thin film electroluminescent devices were characterized by current-voltage (I-V) system, the heights of barriers determined from the I-V measurements were found to be related to the electroluminescence.

Multilayer bioactive glass/zirconium titanate thin films in bone tissue engineering and regenerative dentistry

PubMed Central

Mozafari, Masoud; Salahinejad, Erfan; Shabafrooz, Vahid; Yazdimamaghani, Mostafa; Vashaee, Daryoosh; Tayebi, Lobat

2013-01-01

Surface modification, particularly coatings deposition, is beneficial to tissue-engineering applications. In this work, bioactive glass/zirconium titanate composite thin films were prepared by a sol-gel spin-coating method. The surface features of the coatings were studied by scanning electron microscopy, atomic force microscopy, and spectroscopic reflection analyses. The results show that uniform and sound multilayer thin films were successfully prepared through the optimization of the process variables and the application of carboxymethyl cellulose as a dispersing agent. Also, it was found that the thickness and roughness of the multilayer coatings increase nonlinearly with increasing the number of the layers. This new class of nanocomposite coatings, comprising the bioactive and inert components, is expected not only to enhance bioactivity and biocompatibility, but also to protect the surface of metallic implants against wear and corrosion. PMID:23641155

Nanocrystalline SnO2:F thin films for liquid petroleum gas sensors.

PubMed

Chaisitsak, Sutichai

2011-01-01

This paper reports the improvement in the sensing performance of nanocrystalline SnO(2)-based liquid petroleum gas (LPG) sensors by doping with fluorine (F). Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer). The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO(2) films was investigated. Atomic Force Microscopy (AFM) and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO(2) with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time) of the SnO(2):F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO(2) was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C) with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO(2):F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection.

Silicotungstate, a Potential Electron Transporting Layer for Low-Temperature Perovskite Solar Cells.

PubMed

Choi, Yoon Ho; Kim, Hyun Bin; Yang, In Seok; Sung, Sang Do; Choi, Young Sik; Kim, Jeongho; Lee, Wan In

2017-08-02

Thin films of a heteropolytungstate, lithium silicotungstate (Li 4 SiW 12 O 40 , termed Li-ST), prepared by a solution process at low temperature, were successfully applied as electron transporting layer (ETL) of planar-type perovskite solar cells (PSCs). Dense and uniform Li-ST films were prepared on FTO glass by depositing a thin Li-ST buffer layer, followed by coating of a main Li-ST layer. The film thickness was controlled by varying the number of coating cycles, consisting of spin-coating and thermal treatment at 150 °C. In particular, by employing 60 nm-thick Li-ST layer obtained by two cycles of coating, the fabricated CH 3 NH 3 PbI 3 PSC device demonstrates the photovoltaic conversion efficiency (PCE) of 14.26% with J SC of 22.16 mA cm -2 , V OC of 0.993 mV and FF of 64.81%. The obtained PCE is significantly higher than that of the PSC employing a TiO 2 layer processed at the same temperature (PCE = 12.27%). Spectroscopic analyses by time-resolved photoluminescence and pulsed light-induced transient measurement of photocurrent indicate that the Li-ST layer collects electrons from CH 3 NH 3 PbI 3 more efficiently and also exhibits longer electron lifetime than the TiO 2 layer thermally treated at 150 °C. Thus, Li-ST is considered to be a promising ETL material that can be applied for the fabrication of flexible PSC devices.

Thin TiOx layer as a voltage divider layer located at the quasi-Ohmic junction in the Pt/Ta2O5/Ta resistance switching memory.

PubMed

Li, Xiang Yuan; Shao, Xing Long; Wang, Yi Chuan; Jiang, Hao; Hwang, Cheol Seong; Zhao, Jin Shi

2017-02-09

Ta 2 O 5 has been an appealing contender for the resistance switching random access memory (ReRAM). The resistance switching (RS) in this material is induced by the repeated formation and rupture of the conducting filaments (CFs) in the oxide layer, which are accompanied by the almost inevitable randomness of the switching parameters. In this work, a 1 to 2 nm-thick Ti layer was deposited on the 10 nm-thick Ta 2 O 5 RS layer, which greatly improved the RS performances, including the much-improved switching uniformity. The Ti metal layer was naturally oxidized to TiO x (x < 2) and played the role of a series resistor, whose resistance value was comparable to the on-state resistance of the Ta 2 O 5 RS layer. The series resistor TiO x efficiently suppressed the adverse effects of the voltage (or current) overshooting at the moment of switching by the appropriate voltage partake effect, which increased the controllability of the CF formation and rupture. The switching cycle endurance was increased by two orders of magnitude even during the severe current-voltage sweep tests compared with the samples without the thin TiO x layer. The Ti deposition did not induce any significant overhead to the fabrication process, making the process highly promising for the mass production of a reliable ReRAM.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification.

PubMed

Lassnig, R; Hollerer, M; Striedinger, B; Fian, A; Stadlober, B; Winkler, A

2015-11-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p ++ -silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3-4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact-channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility.

Optimizing pentacene thin-film transistor performance: Temperature and surface condition induced layer growth modification

PubMed Central

Lassnig, R.; Hollerer, M.; Striedinger, B.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

In this work we present in situ electrical and surface analytical, as well as ex situ atomic force microscopy (AFM) studies on temperature and surface condition induced pentacene layer growth modifications, leading to the selection of optimized deposition conditions and entailing performance improvements. We prepared p++-silicon/silicon dioxide bottom-gate, gold bottom-contact transistor samples and evaluated the pentacene layer growth for three different surface conditions (sputtered, sputtered + carbon and unsputtered + carbon) at sample temperatures during deposition of 200 K, 300 K and 350 K. The AFM investigations focused on the gold contacts, the silicon dioxide channel region and the highly critical transition area. Evaluations of coverage dependent saturation mobilities, threshold voltages and corresponding AFM analysis were able to confirm that the first 3–4 full monolayers contribute to the majority of charge transport within the channel region. At high temperatures and on sputtered surfaces uniform layer formation in the contact–channel transition area is limited by dewetting, leading to the formation of trenches and the partial development of double layer islands within the channel region instead of full wetting layers. By combining the advantages of an initial high temperature deposition (well-ordered islands in the channel) and a subsequent low temperature deposition (continuous film formation for low contact resistance) we were able to prepare very thin (8 ML) pentacene transistors of comparably high mobility. PMID:26543442

Semiconductor Laser Diode Arrays by MOCVD (Metalorganic Chemical Vapor Deposition)

DTIC Science & Technology

1987-09-01

laser diode arrays are intended to be used as an optical pump for solid state yttrium aluminum garnet (YAG) lasers. In particular, linear uniform...corresponds to about . , 8080A. Such thin layer structures, while difficult to grow by such conventional growth methods as liquid phase epitaxy ( LPE ...lower yet than for DH lasers grown by LPE . , - Conventional self-aligned stripe laser This structure is formed by growing (on an n-type GaAs substrate

Atomic layer deposition of lithium phosphates as solid-state electrolytes for all-solid-state microbatteries

NASA Astrophysics Data System (ADS)

Wang, Biqiong; Liu, Jian; Sun, Qian; Li, Ruying; Sham, Tsun-Kong; Sun, Xueliang

2014-12-01

Atomic layer deposition (ALD) has been shown as a powerful technique to build three-dimensional (3D) all-solid-state microbattery, because of its unique advantages in fabricating uniform and pinhole-free thin films in 3D structures. The development of solid-state electrolyte by ALD is a crucial step to achieve the fabrication of 3D all-solid-state microbattery by ALD. In this work, lithium phosphate solid-state electrolytes were grown by ALD at four different temperatures (250, 275, 300, and 325 °C) using two precursors (lithium tert-butoxide and trimethylphosphate). A linear dependence of film thickness on ALD cycle number was observed and uniform growth was achieved at all four temperatures. The growth rate was 0.57, 0.66, 0.69, and 0.72 Å/cycle at deposition temperatures of 250, 275, 300, and 325 °C, respectively. Furthermore, x-ray photoelectron spectroscopy confirmed the compositions and chemical structures of lithium phosphates deposited by ALD. Moreover, the lithium phosphate thin films deposited at 300 °C presented the highest ionic conductivity of 1.73 × 10-8 S cm-1 at 323 K with ˜0.51 eV activation energy based on the electrochemical impedance spectroscopy. The ionic conductivity was calculated to be 3.3 × 10-8 S cm-1 at 26 °C (299 K).

The influence of hydrodynamic slip on the electrophoretic mobility of a spherical colloidal particle

NASA Astrophysics Data System (ADS)

Khair, Aditya S.; Squires, Todd M.

2009-04-01

Recent theoretical studies have suggested a significant enhancement in electro-osmotic flows over hydrodynamically slipping surfaces, and experiments have indeed measured O(1) enhancements. In this paper, we investigate whether an equivalent effect occurs in the electrophoretic motion of a colloidal particle whose surface exhibits hydrodynamic slip. To this end, we compute the electrophoretic mobility of a uniformly charged spherical particle with slip length λ as a function of the zeta (or surface) potential of the particle ζ and diffuse-layer thickness κ-1. In the case of a thick diffuse layer, κa ≪1 (where a is the particle size), simple arguments show that slip does lead to an O(1) enhancement in the mobility, owing to the reduced viscous drag on the particle. On the other hand, for a thin-diffuse layer κa ≫1, the situation is more complicated. A detailed asymptotic analysis, following the method of O'Brien [J. Colloid Interface Sci. 92, 204 (1983)], reveals that an O(κλ) increase in the mobility occurs at low-to-moderate zeta potentials (with ζ measured on the scale of thermal voltage kBT /e≈25 mV). However, as ζ is further increased, the mobility decreases and ultimately becomes independent of the slip length—the enhancement is lost—which is due to the importance of nonuniform surface conduction within the thin-diffuse layer, at large ζ and large, but finite, κa. Our asymptotic calculations for thick and thin-diffuse layers are corroborated and bridged by computation of the mobility from the numerical solution of the full electrokinetic equations (using the method of O'Brien and White [J. Chem. Soc., Faraday Trans. 2 74, 1607 (1978)]). In summary, then, we demonstrate that hydrodynamic slip can indeed produce an enhancement in the electrophoretic mobility; however, such enhancements will not be as dramatic as the previously studied κa →∞ limit would suggest. Importantly, this conclusion applies not only to electrophoresis but also to electro-osmosis over highly charged surfaces, wherein any inhomogeneities (e.g., due to curvature, roughness, charge patterning, or a variation in slip length) will drive nonuniform surface conduction, which prevents the significant slip-driven flow enhancements predicted for a uniform highly charged surface.

Stopping dynamics of a steady uniform granular flow over a rough incline

NASA Astrophysics Data System (ADS)

Deboeuf, Stéphanie; Saingier, Guillaume; Thiruvalluvar, Nitharshini; Lagrée, Pierre-Yves; Popinet, Stéphane; Staron, Lydie

2017-06-01

Granular material flowing on complex topographies are ubiquitous in industrial and geophysical situations. Even model granular flows are difficult to understand and predict. Recently, the frictional rheology μ(I) -describing the ratio of the shear stress to the normal stress as a function of the inertial number I, that compares inertial and confinement effects- allows unifying different configurations of granular flows. However it does not succeed in describing some phenomenologies, such as creep flow, deposit height, … Is it attributable to the rheology, to non-local effects, ...? Here, we consider a thin layer of grains flowing steadily and uniformly on a rough incline, when the input mass flow rate is suddenly stopped. We focus on the arrest dynamics by using both experimental and numerical approaches. We measure the height and surface velocities of the granular layer during the long-time stopping dynamics and we compare our experimental results with computations of depthaveraged equations for a fluid of rheology μ(I).

Thin Sheet Modeling for the Seismogenic Crust of Western North America: How Strong is the top Slice of "Sandwich Bread" Above the "Jelly"?

NASA Astrophysics Data System (ADS)

Klein, E. C.; Holt, W. E.; Flesch, L. M.; Haines, A. J.

2006-12-01

The "jelly sandwich" and "crème brûlée" models divides continental lithosphere into distinct rheological layers. Dynamic models from thin sheet approximations provide estimates of the total strength of the lithosphere, but only to a thickness governed by the degree of mechanical coupling between rheological layers. If either the "jelly sandwich" or the "crème brûlée" model of the lithosphere is appropriate for the diffuse plate boundary zone setting of western North America, we expect a sharp contrast or decoupling between the strong upper crust ("bread") layer overlying the weak lower crustal ("jelly") layer. We examine the strength of the upper crust with and without strength contribution from the lower crust using thin sheet modeling methodologies. We use seismically defined densities to constrain vertical integrals of vertical stress (GPE) within the crust. Neglecting stresses due to flexure as well as shear stresses at the base of the crustal layer, lateral differences in GPE within the layer, are balanced solely by gradients in horizontal deviatoric stress [Flesch et al., 2001, 2006]. We solve the force-balance equations for the minimum deviatoric stress field associated with gradients of GPE. This deviatoric stress field calibrates the magnitude of deviatoric stresses within the seismogenic layer. We then solve for stress field boundary conditions associated with the stress field contributions from sources outside the modeled region that together with the minimum solution from GPE differences provide a best match with stress field indicators within western North America. In order to infer appropriate stress field indicators we develop a long-term kinematic strain rate and velocity field model. Where we use this strain rate field we assume that the relationship between deviatoric stress directions and kinematic strain rate directions is isotropic. In our calculations the seismogenic layer extends from the surface to either a uniform depth below sea level or to a variable depth below sea level constrained by heat flow. For the case of a long-term seismogenic layer with a uniform base 20 km below sea level, the long-term vertically integrated deviatoric stress magnitudes range between 0.05-0.75x10^{12} N/m, while the long-term vertically integrated strength magnitudes of the layer are of the order of 0.05-1.5x10^{12} N/m. These strength values constrain low long-term friction coefficients of 0.02-0.30 under hydrostatic to wet conditions in the Basin and Range region. We test the sensitivity of our solutions to different assumed brittle-ductile transition depths and find that coefficients of friction on faults, along with magnitudes of vertically integrated strength, are relatively insensitive to these assumed layer thicknesses. Moreover, through this sensitivity modeling we find evidence that our assumption of decoupling is valid for most of the Basin and Range region in that we find evidence for diminishing contributions to crustal strength with depth. We model the interface between the upper and lower crust by parameterization of a variable seismogenic thickness in the thin sheet equations. This allows us to estimate the strength of the top slice of "bread" without the incorporation of any "jelly". We find that most of the long-term strength of the crust within the diffuse plate boundary zone of western North America resides in the seismogenic layer of the upper crust.

Wet catalyst-support films for production of vertically aligned carbon nanotubes.

PubMed

Alvarez, Noe T; Hamilton, Christopher E; Pint, Cary L; Orbaek, Alvin; Yao, Jun; Frosinini, Aldo L; Barron, Andrew R; Tour, James M; Hauge, Robert H

2010-07-01

A procedure for vertically aligned carbon nanotube (VA-CNT) production has been developed through liquid-phase deposition of alumoxanes (aluminum oxide hydroxides, boehmite) as a catalyst support. Through a simple spin-coating of alumoxane nanoparticles, uniform centimer-square thin film surfaces were coated and used as supports for subsequent deposition of metal catalyst. Uniform VA-CNTs are observed to grow from this film following deposition of both conventional evaporated Fe catalyst, as well as premade Fe nanoparticles drop-dried from the liquid phase. The quality and uniformity of the VA-CNTs are comparable to growth from conventional evaporated layers of Al(2)O(3). The combined use of alumoxane and Fe nanoparticles to coat surfaces represents an inexpensive and scalable approach to large-scale VA-CNT production that makes chemical vapor deposition significantly more competitive when compared to other CNT production techniques.

Response of a thin airfoil encountering strong density discontinuity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Marble, F.E.

1993-12-01

Airfoil theory for unsteady motion has been developed extensively assuming the undisturbed medium to be of uniform density, a restriction accurate for motion in the atmosphere. In some instances, notably for airfoil comprising fan, compressor and turbine blade rows, the undisturbed medium may carry density variations or ``spots``, resulting from non-uniformities in temperature or composition, of a size comparable to the blade chord. This condition exists for turbine blades, immediately downstream of the main burner of a gas turbine engine where the density fluctuations of the order of 50 percent may occur. Disturbances of a somewhat smaller magnitude arise frommore » the ingestion of hot boundary layers into fans, and exhaust into hovercraft. Because these regions of non-uniform density convect with the moving medium, the airfoil experiences a time varying load and moment which the authors calculate.« less

Fabrication of efficient graphene-doped polymer/fullerene bilayer organic solar cells in air using spin coating followed by ultrasonic vibration post treatment

NASA Astrophysics Data System (ADS)

Zabihi, Fatemeh; Chen, Qianli; Xie, Yu; Eslamian, Morteza

2016-12-01

In this work, in an attempt to improve the performance and lifetime of organic solar cells, P3HT photon absorbing polymer was doped with graphene (G) nano-sheets, to make light harvesting G-P3HT composite thin film. The composite this film was then employed as the donor of a bilayer organic solar cell with the structure of glass/ITO/PEDOT:PSS/G-P3HT/C60/Al. The reference P3HT:PCBM bulk heterojunction solar cell was also fabricated for comparison. All solution-processed layers were made by spin coating in humid air (Shanghai, China); C60 and Al were deposited by thermal evaporation. An effective mechanical treatment approach developed by the authors, i.e. the application of forced ultrasonic vibration on the wet spun-on films, was used to improve the dispersion of graphene in G-P3HT composite films to obtain a uniform nanostructure. This mechanical method eliminates tedious and expensive chemical steps, currently performed to engineer the structure of organic solar cells. It is evidenced that the G-P3HT composite thin films, post treated by ultrasonic vibration at the optimum vibration duration, possess superior electrical conductivity, charge carrier mobility and density, uniform surface potential distribution, and lower surface roughness, compared to those of P3HT and G-P3HT thin films made without vibration. The results show significant improvement in the power conversion efficiency (PCE) of vibration-treated G-P3HT/C60 cell (PCE = 5.17%, the highest reported for this structure), substantiating the strong positive effect of using graphene and forced vibration for the fabrication of P3HT active layer in the bilayer cell structure.

Effect of selenization time on the structural and morphological properties of Cu(In,Ga)Se2 thin films absorber layers using two step growth process

NASA Astrophysics Data System (ADS)

Korir, Peter C.; Dejene, Francis B.

2018-04-01

In this work two step growth process was used to prepare Cu(In, Ga)Se2 thin film for solar cell applications. The first step involves deposition of Cu-In-Ga precursor films followed by the selenization process under vacuum using elemental selenium vapor to form Cu(In,Ga)Se2 film. The growth process was done at a fixed temperature of 515 °C for 45, 60 and 90 min to control film thickness and gallium incorporation into the absorber layer film. The X-ray diffraction (XRD) pattern confirms single-phase Cu(In,Ga)Se2 film for all the three samples and no secondary phases were observed. A shift in the diffraction peaks to higher 2θ (2 theta) values is observed for the thin films compared to that of pure CuInSe2. The surface morphology of the resulting film grown for 60 min was characterized by the presence of uniform large grain size particles, which are typical for device quality material. Photoluminescence spectra show the shifting of emission peaks to higher energies for longer duration of selenization attributed to the incorporation of more gallium into the CuInSe2 crystal structure. Electron probe microanalysis (EPMA) revealed a uniform distribution of the elements through the surface of the film. The elemental ratio of Cu/(In + Ga) and Se/Cu + In + Ga strongly depends on the selenization time. The Cu/In + Ga ratio for the 60 min film is 0.88 which is in the range of the values (0.75-0.98) for best solar cell device performances.

Composites with improved fiber-resin interfacial adhesion

NASA Technical Reports Server (NTRS)

Cizmecioglu, Muzaffer (Inventor)

1989-01-01

The adhesion of fiber reinforcement such as high modulus graphite to a matrix resin such as polycarbonate is greatly enhanced by applying a very thin layer, suitably from 50 Angstroms to below 1000 Angstroms, to the surface of the fiber such as by immersing the fiber in a dilute solution of the matrix resin in a volatile solvent followed by draining to remove excess solution and air drying to remove the solvent. The thin layer wets the fiber surface. The very dilute solution of matrix resin is able to impregnate multifilament fibers and the solution evenly flows onto the surface of the fibers. A thin uniform layer is formed on the surface of the fiber after removal of the solvent. The matrix resin coated fiber is completely wetted by the matrix resin during formation of the composite. Increased adhesion of the resin to the fibers is observed at fracture. At least 65 percent of the surface of the graphite fiber is covered with polycarbonate resin at fracture whereas uncoated fibers have very little matrix resin adhering to their surfaces at fracture and epoxy sized graphite fibers exhibit only slightly higher coverage with matrix resin at fracture. Flexural modulus of the composite containing matrix resin coated fibers is increased by 50 percent and flexural strength by 37 percent as compared to composites made with unsized fibers.

Influence of Surface Passivation on AlN Barrier Stress and Scattering Mechanism in Ultra-thin AlN/GaN Heterostructure Field-Effect Transistors.

PubMed

Lv, Y J; Song, X B; Wang, Y G; Fang, Y L; Feng, Z H

2016-12-01

Ultra-thin AlN/GaN heterostructure field-effect transistors (HFETs) with, and without, SiN passivation were fabricated by the same growth and device processes. Based on the measured DC characteristics, including the capacitance-voltage (C-V) and output current-voltage (I-V) curves, the variation of electron mobility with gate bias was found to be quite different for devices with, and without, SiN passivation. Although the AlN barrier layer is ultra thin (c. 3 nm), it was proved that SiN passivation induces no additional tensile stress and has no significant influence on the piezoelectric polarization of the AlN layer using Hall and Raman measurements. The SiN passivation was found to affect the surface properties, thereby increasing the electron density of the two-dimensional electron gas (2DEG) under the access region. The higher electron density in the access region after SiN passivation enhanced the electrostatic screening for the non-uniform distributed polarization charges, meaning that the polarization Coulomb field scattering has a weaker effect on the electron drift mobility in AlN/GaN-based devices.

Time-dependent electrophoresis of a dielectric spherical particle embedded in Brinkman medium

NASA Astrophysics Data System (ADS)

Saad, E. I.; Faltas, M. S.

2018-04-01

An expression for electrophoretic apparent velocity slip in the time-dependent flow of an electrolyte solution saturated in a charged porous medium within an electric double layer adjacent to a dielectric plate under the influence of a tangential uniform electric field is derived. The velocity slip is used as a boundary condition to solve the electrophoretic motion of an impermeable dielectric spherical particle embedded in an electrolyte solution saturated in porous medium under the unsteady Darcy-Brinkman model. Throughout the system, a uniform electric field is applied and maintains with constant strength. Two cases are considered, when the electric double layer enclosing the particle is thin, but finite and when of a particle with a thick double layer. Expressions for the electrophoretic mobility of the particle as functions of the relevant parameters are found. Our results indicate that the time scale for the growth of mobility is significant and small for high permeability. Generally, the effect of the relaxation time for starting electrophoresis is negligible, irrespective of the thickness of the double layer and permeability of the medium. The effects of the elapsed time, permeability, mass density and Debye length parameters on the fluid velocity, the electrophoretic mobility and the acceleration are shown graphically.

Resistive switching of Sn-doped In2O3/HfO2 core-shell nanowire: geometry architecture engineering for nonvolatile memory.

PubMed

Huang, Chi-Hsin; Chang, Wen-Chih; Huang, Jian-Shiou; Lin, Shih-Ming; Chueh, Yu-Lun

2017-05-25

Core-shell NWs offer an innovative approach to achieve nanoscale metal-insulator-metal (MIM) heterostructures along the wire radial direction, realizing three-dimensional geometry architecture rather than planar type thin film devices. This work demonstrated the tunable resistive switching characteristics of ITO/HfO 2 core-shell nanowires with controllable shell thicknesses by the atomic layer deposition (ALD) process for the first time. Compared to planar HfO 2 thin film device configuration, ITO/HfO 2 core-shell nanowire shows a prominent resistive memory behavior, including lower power consumption with a smaller SET voltage of ∼0.6 V and better switching voltage uniformity with variations (standard deviation(σ)/mean value (μ)) of V SET and V RESET from 0.38 to 0.14 and from 0.33 to 0.05 for ITO/HfO 2 core-shell nanowire and planar HfO 2 thin film, respectively. In addition, endurance over 10 3 cycles resulting from the local electric field enhancement can be achieved, which is attributed to geometry architecture engineering. The concept of geometry architecture engineering provides a promising strategy to modify the electric-field distribution for solving the non-uniformity issue of future RRAM.

Tetra-methyl substituted copper (II) phthalocyanine as a hole injection enhancer in organic light-emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Yu-Long; Xu, Jia-Ju; Lin, Yi-Wei

2015-10-15

We have enhanced hole injection and lifetime in organic light-emitting diodes (OLEDs) by incorporating the isomeric metal phthalocyanine, CuMePc, as a hole injection enhancer. The OLED devices containing CuMePc as a hole injection layer (HIL) exhibited higher luminous efficiency and operational lifetime than those using a CuPc layer and without a HIL. The effect of CuMePc thickness on device performance was investigated. Atomic force microscope (AFM) studies revealed that the thin films were smooth and uniform because the mixture of CuMePc isomers depressed crystallization within the layer. This may have caused the observed enhanced hole injection, indicating that CuMePc ismore » a promising HIL material for highly efficient OLEDs.« less

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory

NASA Astrophysics Data System (ADS)

Qian, Shi-Bing; Wang, Yong-Ping; Shao, Yan; Liu, Wen-Jun; Ding, Shi-Jin

2017-02-01

For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp2 and NH3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of 1.5 × 1012 cm-2 and a small size of 3 4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

Growth process optimization of ZnO thin film using atomic layer deposition

NASA Astrophysics Data System (ADS)

Weng, Binbin; Wang, Jingyu; Larson, Preston; Liu, Yingtao

2016-12-01

The work reports experimental studies of ZnO thin films grown on Si(100) wafers using a customized thermal atomic layer deposition. The impact of growth parameters including H2O/DiethylZinc (DEZn) dose ratio, background pressure, and temperature are investigated. The imaging results of scanning electron microscopy and atomic force microscopy reveal that the dose ratio is critical to the surface morphology. To achieve high uniformity, the H2O dose amount needs to be at least twice that of DEZn per each cycle. If the background pressure drops below 400 mTorr, a large amount of nanoflower-like ZnO grains would emerge and increase surface roughness significantly. In addition, the growth temperature range between 200 °C and 250 °C is found to be the optimal growth window. And the crystal structures and orientations are also strongly correlated to the temperature as proved by electron back-scattering diffraction and x-ray diffraction results.

Analysis of the electromagnetic scattering from an inlet geometry with lossy walls

NASA Technical Reports Server (NTRS)

Myung, N. H.; Pathak, P. H.; Chunang, C. D.

1985-01-01

One of the primary goals is to develop an approximate but sufficiently accurate analysis for the problem of electromagnetic (EM) plane wave scattering by an open ended, perfectly-conducting, semi-infinite hollow circular waveguide (or duct) with a thin, uniform layer of lossy or absorbing material on its inner wall, and with a simple termination inside. The less difficult but useful problem of the EM scattering by a two-dimensional (2-D), semi-infinite parallel plate waveguide with an impedance boundary condition on the inner walls was chosen initially for analysis. The impedance boundary condition in this problem serves to model a thin layer of lossy dielectric/ferrite coating on the otherwise perfectly-conducting interior waveguide walls. An approximate but efficient and accurate ray solution was obtained recently. That solution is presently being extended to the case of a moderately thick dielectric/ferrite coating on the walls so as to be valid for situations where the impedance boundary condition may not remain sufficiently accurate.

Spatiotemporal patterns in reaction-diffusion system and in a vibrated granular bed

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swinney, H.L.; Lee, K.J.; McCormick, W.D.

Experiments on a quasi-two-dimensional reaction-diffusion system reveal transitions from a uniform state to stationary hexagonal, striped, and rhombic spatial patterns. For other reactor conditions lamellae and self-replicating spot patterns are observed. These patterns form in continuously fed thin gel reactors that can be maintained indefinitely in well-defined nonequilibrium states. Reaction-diffusion models with two chemical species yield patterns similar to those observed in the experiments. Pattern formation is also being examined in vertically oscillated thin granular layers (typically 3-30 particle diameters deep). For small acceleration amplitudes, a granular layer is flat, but above a well-defined critical acceleration amplitude, spatial patterns spontaneouslymore » form. Disordered time-dependent granular patterns are observed as well as regular patterns of squares, stripes, and hexagons. A one-dimensional model consisting of a completely inelastic ball colliding with a sinusoidally oscillating platform provides a semi-quantitative description of most of the observed bifurcations between the different spatiotemporal regimes.« less

Inkjet printing of metal-oxide-based transparent thin-film capacitors

NASA Astrophysics Data System (ADS)

Matavž, A.; Malič, B.; Bobnar, V.

2017-12-01

We report on the inkjet printing of transparent, thin-film capacitors (TTFCs) composed of indium-zinc-oxide electrodes and a tantalum-oxide-based dielectric on glass substrates. The printing parameters were adapted for the sequential deposition of functional layers, resulting in approximately 100-nm-thick transparent capacitors with a uniform thickness. The relatively high electrical resistivity of the electrodes is reflected in the frequency dispersive dielectric behaviour, which is explained in terms of an equivalent circuit. The resistivity of the electrode strongly decreases with the number of printing passes; consequently, any misalignment of the printed layers is detected in the measured response. At low frequency, the TTFCs show a stable intrinsic dielectric response and a high capacitance density of ˜280 nF/cm2. The good dielectric performance as well as the low leakage-current density (8 × 10-7 A/cm2 at 1 MV cm-1) of our capacitors indicates that inkjet printing can be used to produce all-printed, high-quality electrical devices.

Demonstrating antiphase domain boundary-free GaAs buffer layer on zero off-cut Si (0 0 1) substrate for interfacial misfit dislocation GaSb film by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Ha, Minh Thien Huu; Hoang Huynh, Sa; Binh Do, Huy; Nguyen, Tuan Anh; Luc, Quang Ho; Chang, Edward Yi

2017-08-01

High quality 40 nm GaSb thin film was grown on the zero off-cut Si (0 0 1)-oriented substrate using metalorganic chemical vapor deposition with the temperature-graded GaAs buffer layer. The growth time of the GaAs nucleation layer, which was deposited at a low temperature of 490 °C, is systematically investigated in this paper. Cross-sections of the high resolution transmission electron microscopy images indicate that the GaAs compound formed 3D-islands first before to quasi-2D islands, and finally formed uniform GaAs layer. The optimum thickness of the 490 °C-GaAs layer was found to be 10 nm to suppress the formation of antiphase domain boundaries (APDs). The thin GaAs nucleation layer had a root-mean-square surface roughness of 0.483 nm. This allows the continued high temperature GaAs buffer layer to be achieved with low threading dislocation density of around 7.1  ×  106 cm-2 and almost invisible APDs. Finally, a fully relaxed GaSb film was grown on the top of the GaAs/Si heterostructure using interfacial misfit dislocation growth mode. These results indicate that the GaSb epitaxial layer can be grown on Si substrate with GaAs buffer layer for future p-channel metal-oxide-semiconductor field effect transistors (MOSFETs) applications.

Diffusion barriers

NASA Technical Reports Server (NTRS)

Nicolet, M. A.

1983-01-01

The choice of the metallic film for the contact to a semiconductor device is discussed. One way to try to stabilize a contact is by interposing a thin film of a material that has low diffusivity for the atoms in question. This thin film application is known as a diffusion barrier. Three types of barriers can be distinguished. The stuffed barrier derives its low atomic diffusivity to impurities that concentrate along the extended defects of a polycrystalline layer. Sacrificial barriers exploit the fact that some (elemental) thin films react in a laterally uniform and reproducible fashion. Sacrificial barriers have the advantage that the point of their failure is predictable. Passive barriers are those most closely approximating an ideal barrier. The most-studied case is that of sputtered TiN films. Stuffed barriers may be viewed as passive barriers whose low diffusivity material extends along the defects of the polycrystalline host.

CuIn(S,Se)(2) thin films prepared from a novel thioacetic acid-based solution and their photovoltaic application.

PubMed

Xie, Yian; Liu, Yufeng; Wang, Yaoming; Zhu, Xiaolong; Li, Aimin; Zhang, Lei; Qin, Mingsheng; Lü, Xujie; Huang, Fuqiang

2014-04-28

Low-cost and high-yield preparation of CuInSe2 films is the bottleneck for promising CuInSe2-based thin film solar cells. Here, we developed a simple, safe and cost-effective method using thioacetic acid to fabricate the absorber films of CuIn(S,Se)2 (CISSe). Dissolution of Cu2O and In(OH)3 in thioacetic acid was attributed to the strong coordination ability of S. The adhesive precursor solution can be prepared without any heating, centrifugation and inert gas protection, superior to the previously reported methods. The precursor CISSe layer was easily deposited in air by spin coating to ensure low cost. Uniform and compact CISSe thin films with well-crystallized and pure-phased CISSe grains were obtained after one step annealing. The as-prepared CISSe thin films were successfully applied to solar cells and a energy conversion efficiency of 6.75% was achieved. This facile preparation provides a low-cost and easy method to fabricate Cu-based thin film solar cells.

Preferential growth and enhanced dielectric properties of Ba0.7Sr0.3TiO3 thin films with preannealed Pt bottom electrode

NASA Astrophysics Data System (ADS)

Zhu, Xiaohong; Defaÿ, Emmanuel; Aïd, Marc; Ren, Yinjuan; Zhang, Caiyun; Zhu, Jiliang; Zhu, Jianguo; Xiao, Dingquan

2013-03-01

Ba0.7Sr0.3TiO3 (BST) thin films, about 100 nm in thickness, were prepared on unannealed and 700 °C-preannealed Pt bottom electrodes by the ion beam sputtering and post-deposition annealing method. It was found that the preannealed Pt layer has a more compact structure, making it not only a bottom electrode but also a good template for high-quality BST thin film growth. The BST films deposited on preannealed Pt bottom electrodes showed (0 0 l)-preferred orientation, dense and uniform microstructure with no intermediate phase formed at the film/electrode interface, and thus enhanced dielectric properties. As a result, the typical relative dielectric constant and tunability (under a dc electric field of 1 MV cm-1) reach 180 and 50.1%, respectively, for the BST thin films with preannealed Pt bottom electrodes, which are significantly higher than those (166 and 41.3%, respectively) for the BST thin films deposited on unannealed Pt bottom electrodes.

Thermally evaporated methylammonium tin triiodide thin films for lead-free perovskite solar cell fabrication

DOE PAGES

Yu, Yue; Zhao, Dewei; Grice, Corey R.; ...

2016-09-16

Here, we report on the synthesis of methylammonium tin triiodide (MASnI 3) thin films at room temperature by a hybrid thermal evaporation method and their application in fabricating lead (Pb)-free perovskite solar cells. The as-deposited MASnI 3 thin films exhibit smooth surfaces, uniform coverage across the entire substrate, and strong crystallographic preferred orientation along the < 100 > direction. By incorporating this film with an inverted planar device architecture, our Pb-free perovskite solar cells are able to achieve an open-circuit voltage ( V oc) up to 494 mV. The relatively high V oc is mainly ascribed to the excellent surfacemore » coverage, the compact morphology, the good stoichiometry control of the MASnI 3 thin films, and the effective passivation of the electron-blocking and hole-blocking layers. Finally, our results demonstrate the potential capability of the hybrid evaporation method to prepare high-quality Pb-free MASnI 3 perovskite thin films which can be used to fabricate efficient Pb-free perovskite solar cells.« less

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800–1100°C, we report an increase inmore » the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm ₋1 to 2300 cm ₋1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Lastly, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100°C.« less

Suppressing the Photocatalytic Activity of TiO2 Nanoparticles by Extremely Thin Al2O3 Films Grown by Gas-Phase Deposition at Ambient Conditions

PubMed Central

Guo, Jing; Valdesueiro, David; Yuan, Shaojun; Liang, Bin; van Ommen, J. Ruud

2018-01-01

This work investigated the suppression of photocatalytic activity of titanium dioxide (TiO2) pigment powders by extremely thin aluminum oxide (Al2O3) films deposited via an atomic-layer-deposition-type process using trimethylaluminum (TMA) and H2O as precursors. The deposition was performed on multiple grams of TiO2 powder at room temperature and atmospheric pressure in a fluidized bed reactor, resulting in the growth of uniform and conformal Al2O3 films with thickness control at sub-nanometer level. The as-deposited Al2O3 films exhibited excellent photocatalytic suppression ability. Accordingly, an Al2O3 layer with a thickness of 1 nm could efficiently suppress the photocatalytic activities of rutile, anatase, and P25 TiO2 nanoparticles without affecting their bulk optical properties. In addition, the influence of high-temperature annealing on the properties of the Al2O3 layers was investigated, revealing the possibility of achieving porous Al2O3 layers. Our approach demonstrated a fast, efficient, and simple route to coating Al2O3 films on TiO2 pigment powders at the multigram scale, and showed great potential for large-scale production development. PMID:29364840

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

DOE PAGES

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun; ...

2016-01-29

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800–1100°C, we report an increase inmore » the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm ₋1 to 2300 cm ₋1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Lastly, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100°C.« less

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

PubMed Central

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun; Kisslinger, Kim; Zhu, Yimei; Pulecio, Javier F.

2016-01-01

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800 –1100 °C, we report an increase in the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm−1 to 2300 cm−1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100 °C. PMID:26821604

Method for fabricating thin films of pyrolytic carbon

DOEpatents

Brassell, G.W.; Lewis, J. Jr.; Weber, G.W.

1980-03-13

The present invention relates to a method for fabricating ultrathin films of pyrolytic carbon. Pyrolytic carbon is vapor deposited onto a concave surface of a heated substrate to a total uniform thickness in the range of about 0.1 to 1.0 micrometer. The carbon film on the substrate is provided with a layer of adherent polymeric resin. The resulting composite film of pyrolytic carbon and polymeric resin is then easily separated from the substrate by shrinking the 10 polymeric resin coating with thermally induced forces.

Atomic-layer soft plasma etching of MoS2

PubMed Central

Xiao, Shaoqing; Xiao, Peng; Zhang, Xuecheng; Yan, Dawei; Gu, Xiaofeng; Qin, Fang; Ni, Zhenhua; Han, Zhao Jun; Ostrikov, Kostya (Ken)

2016-01-01

Transition from multi-layer to monolayer and sub-monolayer thickness leads to the many exotic properties and distinctive applications of two-dimensional (2D) MoS2. This transition requires atomic-layer-precision thinning of bulk MoS2 without damaging the remaining layers, which presently remains elusive. Here we report a soft, selective and high-throughput atomic-layer-precision etching of MoS2 in SF6 + N2 plasmas with low-energy (<0.4 eV) electrons and minimized ion-bombardment-related damage. Equal numbers of MoS2 layers are removed uniformly across domains with vastly different initial thickness, without affecting the underlying SiO2 substrate and the remaining MoS2 layers. The etching rates can be tuned to achieve complete MoS2 removal and any desired number of MoS2 layers including monolayer. Layer-dependent vibrational and photoluminescence spectra of the etched MoS2 are also demonstrated. This soft plasma etching technique is versatile, scalable, compatible with the semiconductor manufacturing processes, and may be applicable for a broader range of 2D materials and intended device applications. PMID:26813335

Improved Laser Scribing of Transparent Conductive Oxide for Fabrication of Thin-Film Solar Module

NASA Astrophysics Data System (ADS)

Egorov, F. S.; Kukin, A. V.; Terukov, E. I.; Titov, A. S.

2018-04-01

Nonuniform thickness of the front transparent conductive oxide (TCO) used for fabrication of thin-film solar module (TFSM) based on micromorphic technology affects P1 laser scribing (P1 scribing on the TCO front layer). A method for improvement of the thickness uniformity of the front TCO using modification of the existing system for gas supply of the LPCVD (TCO1200) vacuum setup with the aid of gasdistributing tubes is proposed. The thickness nonuniformity of the deposition procedure is decreased from 15.2 to 11.4% to improve uniformity of the resistance of the front TCO and light-scattering factor of TFSM. In addition, the number of P1 laser scribes with inadmissible resistance of insulation (less than 2 MΩ) is decreased by a factor of 7. A decrease in the amount of melt at the P1 scribe edges leads to an increase in the TFSM shunting resistance by 56 Ω. The TFSM output power is increased by 0.4 W due to improvement of parameters of the front TCO related to application of gas-distributing tubes.

Brownmillerite thin films as fast ion conductors for ultimate-performance resistance switching memory.

PubMed

Acharya, Susant Kumar; Jo, Janghyun; Raveendra, Nallagatlla Venkata; Dash, Umasankar; Kim, Miyoung; Baik, Hionsuck; Lee, Sangik; Park, Bae Ho; Lee, Jae Sung; Chae, Seung Chul; Hwang, Cheol Seong; Jung, Chang Uk

2017-07-27

An oxide-based resistance memory is a leading candidate to replace Si-based flash memory as it meets the emerging specifications for future memory devices. The non-uniformity in the key switching parameters and low endurance in conventional resistance memory devices are preventing its practical application. Here, a novel strategy to overcome the aforementioned challenges has been unveiled by tuning the growth direction of epitaxial brownmillerite SrFeO 2.5 thin films along the SrTiO 3 [111] direction so that the oxygen vacancy channels can connect both the top and bottom electrodes rather directly. The controlled oxygen vacancy channels help reduce the randomness of the conducting filament (CF). The resulting device displayed high endurance over 10 6 cycles, and a short switching time of ∼10 ns. In addition, the device showed very high uniformity in the key switching parameters for device-to-device and within a device. This work demonstrates a feasible example for improving the nanoscale device performance by controlling the atomic structure of a functional oxide layer.

Realization of high Curie temperature ferromagnetism in atomically thin MoS2 and WS2 nanosheets with uniform and flower-like morphology.

PubMed

Yang, Zhaolong; Gao, Daqiang; Zhang, Jing; Xu, Qiang; Shi, Shoupeng; Tao, Kun; Xue, Desheng

2015-01-14

High Curie temperature ferromagnetism has been realized in atomically thin MoS2 and WS2 nanosheets. The ultrathin nanosheet samples were prepared via a novel, simple and efficient chemical vapor deposition method; different kinds of transition metal disulfides (MoS2 and WS2) could be obtained by sulphuring the corresponding cation sources (MoO3 and WCl6). Through related morphological and structural characterization, we confirm that large-area, uniform, few-layer MoS2 and WS2 nanosheets were successfully synthesized by this method. Both nanosheet samples exhibit distinct ferromagnetic behavior. By careful measurement and fitting of the magnetization of MoS2 and WS2 samples at different temperatures, we deconstruct the magnetization into its diamagnetic, paramagnetic and ferromagnetic contributions. The ferromagnetic contributions persist until 865 K for MoS2 and 820 K for WS2. We attribute the observed ferromagnetic properties to the defects and dislocations produced during the growth process, as well as the presence of edge spins at the edge of the nanosheets.

Electrical properties and surface morphology of electron beam evaporated p-type silicon thin films on polyethylene terephthalate for solar cells applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ang, P. C.; Ibrahim, K.; Pakhuruddin, M. Z.

2015-04-24

One way to realize low-cost thin film silicon (Si) solar cells fabrication is by depositing the films with high-deposition rate and manufacturing-compatible electron beam (e-beam) evaporation onto inexpensive foreign substrates such as glass or plastic. Most of the ongoing research is reported on e-beam evaporation of Si films on glass substrates to make polycrystalline solar cells but works combining both e-beam evaporation and plastic substrates are still scarce in the literature. This paper studies electrical properties and surface morphology of 1 µm electron beam evaporated Al-doped p-type silicon thin films on textured polyethylene terephthalate (PET) substrate for application as anmore » absorber layer in solar cells. In this work, Si thin films with different doping concentrations (including an undoped reference) are prepared by e-beam evaporation. Energy dispersion X-ray (EDX) showed that the Si films are uniformly doped by Al dopant atoms. With increased Al/Si ratio, doping concentration increased while both resistivity and carrier mobility of the films showed opposite relationships. Root mean square (RMS) surface roughness increased. Overall, the Al-doped Si film with Al/Si ratio of 2% (doping concentration = 1.57×10{sup 16} atoms/cm{sup 3}) has been found to provide the optimum properties of a p-type absorber layer for fabrication of thin film Si solar cells on PET substrate.« less

Effect of thickness on physical properties of electron beam vacuum evaporated CdZnTe thin films for tandem solar cells

NASA Astrophysics Data System (ADS)

Chander, Subhash; Dhaka, M. S.

2016-10-01

The thickness and physical properties of electron beam vacuum evaporated CdZnTe thin films have been optimized in the present work. The films of thickness 300 nm and 400 nm were deposited on ITO coated glass substrates and subjected to different characterization tools like X-ray diffraction (XRD), UV-Vis spectrophotometer, source meter and scanning electron microscopy (SEM) to investigate the structural, optical, electrical and surface morphological properties respectively. The XRD results show that the as-deposited CdZnTe thin films have zinc blende cubic structure and polycrystalline in nature with preferred orientation (111). Different structural parameters are also evaluated and discussed. The optical study reveals that the optical transition is found to be direct and energy band gap is decreased for higher thickness. The transmittance is found to increase with thickness and red shift observed which is suitable for CdZnTe films as an absorber layer in tandem solar cells. The current-voltage characteristics of deposited films show linear behavior in both forward and reverse directions as well as the conductivity is increased for higher film thickness. The SEM studies show that the as-deposited CdZnTe thin films are found to be homogeneous, uniform, small circle-shaped grains and free from crystal defects. The experimental results confirm that the film thickness plays an important role to optimize the physical properties of CdZnTe thin films for tandem solar cell applications as an absorber layer.

Catalytic, hollow, refractory spheres, conversions with them

NASA Technical Reports Server (NTRS)

Wang, Taylor G. (Inventor); Elleman, Daniel D. (Inventor); Lee, Mark C. (Inventor); Kendall, Jr., James M. (Inventor)

1989-01-01

Improved, heterogeneous, refractory catalysts are in the form of gas-impervious, hollow, thin-walled spheres (10) suitable formed of a shell (12) of refractory such as alumina having a cavity (14) containing a gas at a pressure greater than atmospheric pressure. The wall material may be itself catalytic or a catalytically active material coated onto the sphere as a layer (16), suitably platinum or iron, which may be further coated with a layer (18) of activator or promoter. The density of the spheres (30) can be uniformly controlled to a preselected value within .+-.10 percent of the density of the fluid reactant such that the spheres either remain suspended or slowly fall or rise through the liquid reactant.

Catalytic, hollow, refractory spheres

NASA Technical Reports Server (NTRS)

Wang, Taylor G. (Inventor); Elleman, Daniel D. (Inventor); Lee, Mark C. (Inventor); Kendall, Jr., James M. (Inventor)

1987-01-01

Improved, heterogeneous, refractory catalysts are in the form of gas-impervious, hollow, thin-walled spheres (10) suitable formed of a shell (12) of refractory such as alumina having a cavity (14) containing a gas at a pressure greater than atmospheric pressure. The wall material may be itself catalytic or a catalytically active material coated onto the sphere as a layer (16), suitably platinum or iron, which may be further coated with a layer (18) of activator or promoter. The density of the spheres (30) can be uniformly controlled to a preselected value within .+-.10 percent of the density of the fluid reactant such that the spheres either remain suspended or slowly fall or rise through the liquid reactant.

Catalytic hollow spheres

NASA Technical Reports Server (NTRS)

Wang, Taylor G. (Inventor); Elleman, Daniel D. (Inventor); Lee, Mark C. (Inventor); Kendall, Jr., James M. (Inventor)

1989-01-01

The improved, heterogeneous catalysts are in the form of gas-impervious, hollow, thin-walled spheres (10) suitably formed of a shell (12) of metal such as aluminum having a cavity (14) containing a gas at a pressure greater than atmospheric pressure. The wall material may be, itself, catalytic or the catalyst can be coated onto the sphere as a layer (16), suitably platinum or iron, which may be further coated with a layer (18) of activator or promoter. The density of the spheres (30) can be uniformly controlled to a preselected value within .+-.10 percent of the density of the fluid reactant such that the spheres either remain suspended or slowly fall or rise through the liquid reactant.

Catalytic hollow spheres

NASA Technical Reports Server (NTRS)

Wang, Taylor G. (Inventor); Elleman, Daniel D. (Inventor); Lee, Mark C. (Inventor); Kendall, Jr., James M. (Inventor)

1986-01-01

The improved, heterogeneous catalysts are in the form of gas-impervious, hollow, thin-walled spheres (10) suitably formed of a shell (12) of metal such as aluminum having a cavity (14) containing a gas at a pressure greater than atmospheric pressure. The wall material may be, itself, catalytic or the catalyst can be coated onto the sphere as a layer (16), suitably platinum or iron, which may be further coated with a layer (18) of activator or promoter. The density of the spheres (30) can be uniformly controlled to a preselected value within .+-.10 percent of the density of the fluid reactant such that the spheres either remain suspended or slowly fall or rise through the liquid reactant.

Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment

NASA Astrophysics Data System (ADS)

Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

2018-05-01

Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO2. The ALD ZrO2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

Atomic layer deposited high-k dielectric on graphene by functionalization through atmospheric plasma treatment.

PubMed

Shin, Jeong Woo; Kang, Myung Hoon; Oh, Seongkook; Yang, Byung Chan; Seong, Kwonil; Ahn, Hyo-Sok; Lee, Tae Hoon; An, Jihwan

2018-05-11

Atomic layer-deposited (ALD) dielectric films on graphene usually show noncontinuous and rough morphology owing to the inert surface of graphene. Here, we demonstrate the deposition of thin and uniform ALD ZrO 2 films with no seed layer on chemical vapor-deposited graphene functionalized by atmospheric oxygen plasma treatment. Transmission electron microscopy showed that the ALD ZrO 2 films were highly crystalline, despite a low ALD temperature of 150 °C. The ALD ZrO 2 film served as an effective passivation layer for graphene, which was shown by negative shifts in the Dirac voltage and the enhanced air stability of graphene field-effect transistors after ALD of ZrO 2 . The ALD ZrO 2 film on the functionalized graphene may find use in flexible graphene electronics and biosensors owing to its low process temperature and its capacity to improve device performance and stability.

Room-Temperature and Solution-Processable Cu-Doped Nickel Oxide Nanoparticles for Efficient Hole-Transport Layers of Flexible Large-Area Perovskite Solar Cells.

PubMed

He, Qiqi; Yao, Kai; Wang, Xiaofeng; Xia, Xuefeng; Leng, Shifeng; Li, Fan

2017-12-06

Flexible perovskite solar cells (PSCs) using plastic substrates have become one of the most attractive points in the field of thin-film solar cells. Low-temperature and solution-processable nanoparticles (NPs) enable the fabrication of semiconductor thin films in a simple and low-cost approach to function as charge-selective layers in flexible PSCs. Here, we synthesized phase-pure p-type Cu-doped NiO x NPs with good electrical properties, which can be processed to smooth, pinhole-free, and efficient hole transport layers (HTLs) with large-area uniformity over a wide range of film thickness using a room-temperature solution-processing technique. Such a high-quality inorganic HTL allows for the fabrication of flexible PSCs with an active area >1 cm 2 , which have a power conversion efficiency over 15.01% without hysteresis. Moreover, the Cu/NiO x NP-based flexible devices also demonstrate excellent air stability and mechanical stability compared to their counterpart fabricated on the pristine NiO x films. This work will contribute to the evolution of upscaling flexible PSCs with a simple fabrication process and high device performances.

New approach for producing chemical templates over large area by Molecular Transfer Printing

NASA Astrophysics Data System (ADS)

Inoue, Takejiro; Janes, Dustin; Ren, Jiaxing; Willson, Grant; Ellison, Christopher; Nealey, Paul

2014-03-01

Fabrication of well-defined chemically patterned surfaces is crucially important to the development of next generation microprocessors, hard disk memory devices, photonic/plasmonic devices, separation membranes, and biological microarrays. One promising patterning method in these fields is Molecular Transfer Printing (MTP), which replicates chemical patterns with feature dimensions of the order of 10nm utilizing a master template defined by the microphase separated domains of a block copolymer thin film. The total transfer printing area achievable by MTP has so far been limited by the contact area between two rigid substrates. Therefore, strategies to make conformal contact between substrates could be practically useful because a single lithographically-defined starting pattern could be used to fabricate many replicates by a low-cost process. Here we show a new approach that utilizes a chemically deposited SiN layer and a liquid conformal layer to enable transfer printing of chemical patterns upon thermal annealing over large, continuous areas. We anticipate that our process could be integrated into Step and Flash Imprint Lithography (SFIL) tools to achieve conformal layer thicknesses thin and uniform enough to permit pattern transfer through a dry-etch protocol.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Influence of the total gas flow rate on high rate growth microcrystalline silicon films and solar cells

NASA Astrophysics Data System (ADS)

Han, Xiao-Yan; Hou, Guo-Fu; Zhang, Xiao-Dan; Wei, Chang-Chun; Li, Gui-Jun; Zhang, De-Kun; Chen, Xin-Liang; Sun, Jian; Zhang, Jian-Jun; Zhao, Ying; Geng, Xin-Hua

2009-08-01

This paper reports that high-rate-deposition of microcrystalline silicon solar cells was performed by very-high-frequency plasma-enhanced chemical vapor deposition. These solar cells, whose intrinsic μc-Si:H layers were prepared by using a different total gas flow rate (Ftotal), behave much differently in performance, although their intrinsic layers have similar crystalline volume fraction, opto-electronic properties and a deposition rate of ~ 1.0 nm/s. The influence of Ftotal on the micro-structural properties was analyzed by Raman and Fourier transformed infrared measurements. The results showed that the vertical uniformity and the compact degree of μc-Si:H thin films were improved with increasing Ftotal. The variation of the microstructure was regarded as the main reason for the difference of the J-V parameters. Combined with optical emission spectroscopy, we found that the gas temperature plays an important role in determining the microstructure of thin films. With Ftotal of 300 sccm, a conversion efficiency of 8.11% has been obtained for the intrinsic layer deposited at 8.5 Å/s (1 Å = 0.1 nm).

Effect of TiN coating on microstructure of Tif/Al composite.

PubMed

Xiu, Z Y; Chen, G Q; Wang, M; Hussain, Murid

2013-02-01

In the present work, Ti fibre reinforced Al matrix composites (Ti(f)/Al) were fabricated by pressure infiltration method. In order to suppress the severe Ti-Al reaction and reduce the formation of brittle TiAl(3) phase, a TiN layer was coated on Ti fibres by an arc ion plating method before composite preparation. A thin TiN layer was coated on the Ti fibre surface, and the maximum and minimum thickness values of layer were about 3.5 and 1μm, respectively. Prefer orientation of TiN on (111) and (200) was found by XRD analysis. A thin and uniform TiAl(3) layer was observed in Ti(f)/Al composite. However, after coated with TiN layer, no significant reaction layer was found in (Ti(f)+TiN)/Al composite. Segregation of Mg element was found in Ti(f)/Al composite, and the presence of TiN layer showed little effect on this behaviour. Due to the large CTE difference between Ti fibre and Al matrix, high density dislocations were observed in the Al matrix. Meanwhile, fine dispersed Mg(2)Al(3) phases were also found in Al matrix. Ti fibre is mainly composed of α- and β-Ti. Small discontinuous needle-like TiAl(3) phases were detected at TiN/Al interface, which implies that the presence of TiN layer between the Ti fibre and Al matrix could effectively hinder the formation of TiAl(3) phases. Copyright © 2012 Elsevier Ltd. All rights reserved.

Nanocrystalline SnO2:F Thin Films for Liquid Petroleum Gas Sensors

PubMed Central

Chaisitsak, Sutichai

2011-01-01

This paper reports the improvement in the sensing performance of nanocrystalline SnO2-based liquid petroleum gas (LPG) sensors by doping with fluorine (F). Un-doped and F-doped tin oxide films were prepared on glass substrates by the dip-coating technique using a layer-by-layer deposition cycle (alternating between dip-coating a thin layer followed by a drying in air after each new layer). The results showed that this technique is superior to the conventional technique for both improving the film thickness uniformity and film transparency. The effect of F concentration on the structural, surface morphological and LPG sensing properties of the SnO2 films was investigated. Atomic Force Microscopy (AFM) and X-ray diffraction pattern measurements showed that the obtained thin films are nanocrystalline SnO2 with nanoscale-textured surfaces. Gas sensing characteristics (sensor response and response/recovery time) of the SnO2:F sensors based on a planar interdigital structure were investigated at different operating temperatures and at different LPG concentrations. The addition of fluorine to SnO2 was found to be advantageous for efficient detection of LPG gases, e.g., F-doped sensors are more stable at a low operating temperature (300 °C) with higher sensor response and faster response/recovery time, compared to un-doped sensor materials. The sensors based on SnO2:F films could detect LPG even at a low level of 25% LEL, showing the possibility of using this transparent material for LPG leak detection. PMID:22164007

Strongly nonlinear dynamics of electrolytes in large ac voltages.

PubMed

Højgaard Olesen, Laurits; Bazant, Martin Z; Bruus, Henrik

2010-07-01

We study the response of a model microelectrochemical cell to a large ac voltage of frequency comparable to the inverse cell relaxation time. To bring out the basic physics, we consider the simplest possible model of a symmetric binary electrolyte confined between parallel-plate blocking electrodes, ignoring any transverse instability or fluid flow. We analyze the resulting one-dimensional problem by matched asymptotic expansions in the limit of thin double layers and extend previous work into the strongly nonlinear regime, which is characterized by two features--significant salt depletion in the electrolyte near the electrodes and, at very large voltage, the breakdown of the quasiequilibrium structure of the double layers. The former leads to the prediction of "ac capacitive desalination" since there is a time-averaged transfer of salt from the bulk to the double layers, via oscillating diffusion layers. The latter is associated with transient diffusion limitation, which drives the formation and collapse of space-charge layers, even in the absence of any net Faradaic current through the cell. We also predict that steric effects of finite ion sizes (going beyond dilute-solution theory) act to suppress the strongly nonlinear regime in the limit of concentrated electrolytes, ionic liquids, and molten salts. Beyond the model problem, our reduced equations for thin double layers, based on uniformly valid matched asymptotic expansions, provide a useful mathematical framework to describe additional nonlinear responses to large ac voltages, such as Faradaic reactions, electro-osmotic instabilities, and induced-charge electrokinetic phenomena.

Microstructural and mechanical properties of Al2O3/ZrO2 nanomultilayer thin films prepared by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Balakrishnan, G.; Sastikumar, D.; Kuppusami, P.; Babu, R. Venkatesh; Song, Jung Il

2018-02-01

Single layer aluminium oxide (Al2O3), zirconium oxide (ZrO2) and Al2O3/ZrO2 nano multilayer films were deposited on Si (100) substrates at room temperature by pulsed laser deposition. The development of Al2O3/ZrO2 nanolayered structure is an important method used to stabilize the high temperature phase (tetragonal and cubic) of ZrO2 at room temperature. In the Al2O3/ZrO2 multilayer structure, the Al2O3 layer was kept constant at 5 nm, while the ZrO2 layer thickness varied from 5 to 20 nm (5/5, 5/10, 5/15 and 5/20 nm) with a total of 40 bilayers. The X-ray diffraction studies of single layer Al2O3 indicated the γ-Al2O3 of cubic structure, while the single layer ZrO2 indicated both monoclinic and tetragonal phases. The 5/5 and 5/10 nm multilayer films showed the nanocrystalline nature of ZrO2 with tetragonal phase. The high resolution transmission electron microscopy studies indicated the formation of well-defined Al2O3 and ZrO2 layers and that they are of uniform thickness. The atomic force microscopy studies revealed the uniform and dense distribution of nanocrystallites. The nanoindentation studies indicated the hardness of 20.8 ± 1.10 and 10 ± 0.60 GPa, for single layer Al2O3 and ZrO2, respectively, and the hardness of multilayer films varied with bilayer thickness.

A Lithium Ion Highway by Surface Coordination Polymerization: In Situ Growth of Metal-Organic Framework Thin Layers on Metal Oxides for Exceptional Rate and Cycling Performance.

PubMed

Han, Yuzhen; Yu, Danni; Zhou, Junwen; Xu, Peiyu; Qi, Pengfei; Wang, Qianyou; Li, Siwu; Fu, Xiaotao; Gao, Xing; Jiang, Chenghao; Feng, Xiao; Wang, Bo

2017-08-25

A thin layer of a highly porous metal-organic framework material, ZIF-8, is fabricated uniformly on the surface of nanostructured transition metal oxides (ZnO nanoflakes and MnO 2 nanorods) to boost the transfer of lithium ions. The novel design and uniform microstructure of the MOF-coated TMOs (ZIF-8@TMOs) exhibit dramatically enhanced rate and cycling performance comparing to their pristine counterparts. The capacities of ZIF-8@ZnO (nanoflakes) and ZIF-8@MnO 2 (nanorods) are 28 % and 31 % higher that of the pristine ones at the same current density. The nanorods of ZIF-8@MnO 2 show a capacity of 1067 mAh g -1 after 500 cycles at 1 Ag -1 and without any fading. To further improve the conductivity and capacity, the ZIF-8-coated materials are pyrolyzed at 700 °C in an N 2 atmosphere (ZIF-8@TMO-700 N). After pyrolysis, a much higher capacity improvement is achieved: ZIF-8@ZnO-700 N and ZIF-8@MnO 2 -700 N have 54 % and 69 % capacity increases compared with the pristine TMOs, and at 1 Ag -1 , the capacity of ZIF-8@MnO 2 -700 N is 1060 mAh g -1 after cycling for 300 cycles. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Electrochemically mediated electrodeposition/electropolymerization to yield a glucose microbiosensor with improved characteristics.

PubMed

Chen, Xiaohong; Matsumoto, Norio; Hu, Yibai; Wilson, George S

2002-01-15

A procedure is described that provides for electrochemically mediated deposition of enzyme and a polymer layer permselective for endogenous electroactive species. Electrodeposition was first employed for the direct immobilization of glucose oxidase to produce a uniform, thin, and compact film on a Pt electrode. Electropolymerization of phenol was then employed to form an anti-interference and protective polyphenol film within the enzyme layer. In addition, a stability-reinforcing membrane derived from (3-aminopropyl)trimethoxysilane was constructed by electrochemically assisted cross-linking. This hybrid film outside the enzyme layer contributed to the improved stability and permselectivity. The resulting glucose sensor was characterized by a short response time (<4 s), high sensitivity (1200 nA/mM x cm2), low interference from endogenous electroactive species, and working lifetime of more than 50 days.

Effect of catalyst on deposition of vanadium oxide in plasma ambient

NASA Astrophysics Data System (ADS)

Singh, Megha; Kumar, Prabhat; Saini, Sujit K.; Reddy, G. B.

2018-05-01

In this paper, we have studied effect of catalyst (buffer layer) on structure, morphology, crystallinity, uniformity of nanostructured thin films deposited in nitrogen plasma ambient keeping all other process parameters constant. The process used for deposition is novel known as Plasma Assisted Sublimation Process (PASP). Samples were then studied using SEM, TEM, HRTEM, Raman spectroscopy. By structural analysis it was found out that samples deposited on Ni layer composed chiefly of α-V2O5 but minor amount of other phases were present in the sample. Samples deposited on Al catalyst layer revealed different phase of V2O5, where sample deposited on Ag was composed chiefly of VO2±x phase. Further analysis revealed that morphology of samples is also affected by catalyst. While samples deposited in Al and Ag layer tend to have reasonably defined geometry, sample deposited on Ni layer were irregular in shape and size. All the results well corroborate with each other.

Predicting the flow & noise of a rotor in a turbulent boundary layer using an actuator disk -- RANS approach

NASA Astrophysics Data System (ADS)

Buono, Armand C.

The numerical method presented in this study attempts to predict the mean, non-uniform flow field upstream of a propeller partially immersed in a thick turbulent boundary layer with an actuator disk using CFD based on RANS in ANSYS FLUENT. Three different configurations, involving an infinitely thin actuator disk in the freestream (Configuration 1), an actuator disk near a wall with a turbulent boundary layer (Configuration 2), and an actuator disk with a hub near a wall with a turbulent boundary layer (Configuration 3), were analyzed for a variety of advance ratios ranging from J = 0.48 to J =1.44. CFD results are shown to be in agreement with previous works and validated with experimental data of reverse flow occurring within the boundary layer above the flat plate upstream of a rotor in the Virginia Tech's Stability Wind Tunnel facility. Results from Configuration 3 will be used in future aero-acoustic computations.

Novel cylindrical illuminator tip for ultraviolet light delivery

NASA Astrophysics Data System (ADS)

Shangguan, HanQun; Haw, Thomas E.; Gregory, Kenton W.; Casperson, Lee W.

1993-06-01

The design, processing, and sequential testing of a novel cylindrical diffusing optical fiber tip for ultraviolet light delivery is described. This device has been shown to uniformly (+/- 15%) illuminate angioplasty balloons, 20 mm in length, that are used in an experimental photochemotherapeutic treatment of swine intimal hyperplasia. Our experiments show that uniform diffusing tips of < 400 micron diameter can be reliably constructed for this and other interstitial applications. Modeling results indicate that this design is scalable to smaller diameters. The diffusing tips are made by stripping the protective buffer and etching away the cladding over a length of 20 mm from the fiber tip and replacing it with a thin layer of optical epoxy mixed with Al2O3 powder. To improve the uniformity and ease of fabrication, we have evaluated a new device configuration where the tip is etched into a modified conical shape, and the distal end face is polished and then coated with an optically opaque epoxy. This is shown to uniformly scatter approximately 70% of the light launched into the fiber without forward transmission.

Spectroscopic Ellipsometry Studies of Thin Film a-Si:H/nc-Si:H Micromorph Solar Cell Fabrication in the p-i-n Superstrate Configuration

NASA Astrophysics Data System (ADS)

Huang, Zhiquan

Spectroscopic ellipsometry (SE) is a non-invasive optical probe that is capable of accurately and precisely measuring the structure of thin films, such as their thicknesses and void volume fractions, and in addition their optical properties, typically defined by the index of refraction and extinction coefficient spectra. Because multichannel detection systems integrated into SE instrumentation have been available for some time now, the data acquisition time possible for complete SE spectra has been reduced significantly. As a result, real time spectroscopic ellipsometry (RTSE) has become feasible for monitoring thin film nucleation and growth during the deposition of thin films as well as during their removal in processes of thin film etching. Also because of the reduced acquisition time, mapping SE is possible by mounting an SE instrument with a multichannel detector onto a mechanical translation stage. Such an SE system is capable of mapping the thin film structure and its optical properties over the substrate area, and thereby evaluating the spatial uniformity of the component layers. In thin film photovoltaics, such structural and optical property measurements mapped over the substrate area can be applied to guide device optimization by correlating small area device performance with the associated local properties. In this thesis, a detailed ex-situ SE study of hydrogenated amorphous silicon (a-Si:H) thin films and solar cells prepared by plasma enhanced chemical vapor deposition (PECVD) has been presented. An SE analysis procedure with step-by-step error minimization has been applied to obtain accurate measures of the structural and optical properties of the component layers of the solar cells. Growth evolution diagrams were developed as functions of the deposition parameters in PECVD for both p-type and n-type layers to characterize the regimes of accumulated thickness over which a-Si:H, hydrogenated nanocrystalline silicon (nc-Si:H) and mixed phase (a+nc)-Si:H thin films are obtained. The underlying materials for these depositions were newly-deposited intrinsic a-Si:H layers on thermal oxide coated crystalline silicon wafers, designed to simulate specific device configurations. As a result, these growth evolution diagrams can be applied to both p-i-n and n-i-p solar cell optimization. In this thesis, the n-layer growth evolution diagram expressed in terms of hydrogen dilution ratio was applied in correlations with the performance of p-i-n single junction devices in order to optimize these devices. Moreover, ex-situ mapping SE was also employed over the area of multilayer structures in order to achieve better statistics for solar cell optimization by correlating structural parameters locally with small area solar cell performance parameters. In the study of (a-Si:H p-i-n)/(nc-Si:H p-i-n) tandem solar cells, RTSE was successfully applied to monitor the fabrication of the top cell, and efforts to optimize the nanocrystalline p-layer and i-layer of the bottom cell were initiated.

Growing High-Quality InAs Quantum Dots for Infrared Lasers

NASA Technical Reports Server (NTRS)

Qiu, Yueming; Uhl, David

2004-01-01

An improved method of growing high-quality InAs quantum dots embedded in lattice-matched InGaAs quantum wells on InP substrates has been developed. InAs/InGaAs/InP quantum dot semiconductor lasers fabricated by this method are capable of operating at room temperature at wavelengths greater than or equal to 1.8 mm. Previously, InAs quantum dot lasers based on InP substrates have been reported only at low temperature of 77 K at a wavelength of 1.9 micrometers. In the present method, as in the prior method, one utilizes metalorganic vapor phase epitaxy to grow the aforementioned semiconductor structures. The development of the present method was prompted in part by the observation that when InAs quantum dots are deposited on an InGaAs layer, some of the InAs in the InGaAs layer becomes segregated from the layer and contributes to the formation of the InAs quantum dots. As a result, the quantum dots become highly nonuniform; some even exceed a critical thickness, beyond which they relax. In the present method, one covers the InGaAs layer with a thin layer of GaAs before depositing the InAs quantum dots. The purpose and effect of this thin GaAs layer is to suppress the segregation of InAs from the InGaAs layer, thereby enabling the InAs quantum dots to become nearly uniform (see figure). Devices fabricated by this method have shown near-room-temperature performance.

Toward Adequate Operation of Amorphous Oxide Thin-Film Transistors for Low-Concentration Gas Detection.

PubMed

Kim, Kyung Su; Ahn, Cheol Hyoun; Jung, Sung Hyeon; Cho, Sung Woon; Cho, Hyung Koun

2018-03-28

We suggest the use of a thin-film transistor (TFT) composed of amorphous InGaZnO (a-IGZO) as a channel and a sensing layer for low-concentration NO 2 gas detection. Although amorphous oxide layers have a restricted surface area when reacting with NO 2 gas, such TFT sensors have incomparable advantages in the aspects of electrical stability, large-scale uniformity, and the possibility of miniaturization. The a-IGZO thin films do not possess typical reactive sites and grain boundaries, so that the variation in drain current of the TFTs strictly originates from oxidation reaction between channel surface and NO 2 gas. Especially, the sensing data obtained from the variation rate of drain current makes it possible to monitor efficiently and quickly the variation of the NO 2 concentration. Interestingly, we found that enhancement-mode TFT (EM-TFT) allows discrimination of the drain current variation rate at NO 2 concentrations ≤10 ppm, whereas a depletion-mode TFT is adequate for discriminating NO 2 concentrations ≥10 ppm. This discrepancy is attributed to the ratio of charge carriers contributing to gas capture with respect to total carriers. This capacity for the excellent detection of low-concentration NO 2 gas can be realized through (i) three-terminal TFT gas sensors using amorphous oxide, (ii) measurement of the drain current variation rate for high selectivity, and (iii) an EM mode driven by tuning the electrical conductivity of channel layers.

Enhancement of a-IGZO TFT Device Performance Using a Clean Interface Process via Etch-Stopper Nano-layers.

PubMed

Chung, Jae-Moon; Zhang, Xiaokun; Shang, Fei; Kim, Ji-Hoon; Wang, Xiao-Lin; Liu, Shuai; Yang, Baoguo; Xiang, Yong

2018-05-29

To overcome the technological and economic obstacles of amorphous indium-gallium-zinc-oxide (a-IGZO)-based display backplane for industrial production, a clean etch-stopper (CL-ES) process is developed to fabricate a-IGZO-based thin film transistor (TFT) with improved uniformity and reproducibility on 8.5th generation glass substrates (2200 mm × 2500 mm). Compared with a-IGZO-based TFT with back-channel-etched (BCE) structure, a newly formed ES nano-layer (~ 100 nm) and a simultaneous etching of a-IGZO nano-layer (30 nm) and source-drain electrode layer are firstly introduced to a-IGZO-based TFT device with CL-ES structure to improve the uniformity and stability of device for large-area display. The saturation electron mobility of 8.05 cm 2 /V s and the V th uniformity of 0.72 V are realized on the a-IGZO-based TFT device with CL-ES structure. In the negative bias temperature illumination stress and positive bias thermal stress reliability testing under a ± 30 V bias for 3600 s, the measured V th shift of CL-ES-structured device significantly decreased to - 0.51 and + 1.94 V, which are much lower than that of BCE-structured device (- 3.88 V, + 5.58 V). The electrical performance of the a-IGZO-based TFT device with CL-ES structure implies that the economic transfer from a silicon-based TFT process to the metal oxide semiconductor-based process for LCD fabrication is highly feasible.

Development of solid-state avalanche amorphous selenium for medical imaging.

PubMed

Scheuermann, James R; Goldan, Amir H; Tousignant, Olivier; Léveillé, Sébastien; Zhao, Wei

2015-03-01

Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layer (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.

Dewetting of Thin Polymer Films

NASA Astrophysics Data System (ADS)

Dixit, P. S.; Sorensen, J. L.; Kent, M.; Jeon, H. S.

2001-03-01

DEWETTING OF THIN POLYMER FILMS P. S. Dixit,(1) J. L. Sorensen,(2) M. Kent,(2) H. S. Jeon*(1) (1) Department of Petroleum and Chemical Engineering, New Mexico Institute of Mining and Technology, 801 Leroy Place, Socorro, NM 87801, jeon@nmt.edu (2) Department 1832, Sandia National Laboratories, Albuquerque, NM. Dewetting of thin polymer films is of technological importance for a variety of applications such as protective coatings, dielectric layers, and adhesives. Stable and smooth films are required for the above applications. Above the glass transition temperature (Tg) the instability of polymer thin films on a nonwettable substrate can be occurred. The dewetting mechanism and structure of polypropylene (Tg = -20 ^circC) and polystyrene (Tg = 100 ^circC) thin films is investigated as a function of film thickness (25 Åh < 250 Åand quenching temperature. Contact angle measurements are used in conjunction with optical microscope to check the surface homogeneity of the films. Uniform thin films are prepared by spin casting the polymer solutions onto silicon substrates with different contact angles. We found that the stable and unstable regions of the thin films as a function of the film thickness and quenching temperature, and then constructed a stability diagram for the dewetting of thin polymer films. We also found that the dewetting patterns of the thin films are affected substantially by the changes of film thickness and quenching temperature.

Transient well flow in layered aquifer systems: the uniform well-face drawdown solution

NASA Astrophysics Data System (ADS)

Hemker, C. J.

1999-11-01

Previously a hybrid analytical-numerical solution for the general problem of computing transient well flow in vertically heterogeneous aquifers was proposed by the author. The radial component of flow was treated analytically, while the finite-difference technique was used for the vertical flow component only. In the present work the hybrid solution has been modified by replacing the previously assumed uniform well-face gradient (UWG) boundary condition in such a way that the drawdown remains uniform along the well screen. The resulting uniform well-face drawdown (UWD) solution also includes the effects of a finite diameter well, wellbore storage and a thin skin, while partial penetration and vertical heterogeneity are accommodated by the one-dimensional discretization. Solutions are proposed for well flow caused by constant, variable and slug discharges. The model was verified by comparing wellbore drawdowns and well-face flux distributions with published numerical solutions. Differences between UWG and UWD well flow will occur in all situations with vertical flow components near the well, which is demonstrated by considering: (1) partially penetrating wells in confined aquifers, (2) fully penetrating wells in unconfined aquifers with delayed response and (3) layered aquifers and leaky multiaquifer systems. The presented solution can be a powerful tool for solving many well-hydraulic problems, including well tests, flowmeter tests, slug tests and pumping tests. A computer program for the analysis of pumping tests, based on the hybrid analytical-numerical technique and UWG or UWD conditions, is available from the author.

Non-destructive evaluation of polymer coating structures on pharmaceutical pellets using full-field optical coherence tomography.

PubMed

Li, Chen; Zeitler, J Axel; Dong, Yue; Shen, Yao-Chun

2014-01-01

Full-field optical coherence tomography (FF-OCT) using a conventional light-emitting diode and a complementary metal-oxide semiconductor camera has been developed for characterising coatings on small pellet samples. A set of en-face images covering an area of 700 × 700 μm(2) was taken over a depth range of 166 μm. The three-dimensional structural information, such as the coating thickness and uniformity, was subsequently obtained by analysis of the recorded en-face images. Drug-loaded pharmaceutical sustained-release pellets with two coating layers and of a sub-millimetre diameter were studied to demonstrate the usefulness of the developed system. We have shown that both coatings can be clearly resolved and the thickness was determined to be 40 and 50 μm for the outer and inner coating layers, respectively. It was also found that the outer coating layer is relatively uniform, whereas the inner coating layer has many particle-like features. X-ray computed microtomography measurements carried out on the same pellet sample confirmed all these findings. The presented FF-OCT approach is inexpensive and has better spatial resolution compared with other non-destructive analysis techniques such as terahertz pulsed imaging, and is thus considered advantageous for the quantitative analysis of thin coatings on small pellet samples. © 2013 Wiley Periodicals, Inc. and the American Pharmacists Association.

Characterization of ZrO2 buffer layers for sequentially evaporated Y-Ba-CuO on Si and Al2O3 substrates

NASA Technical Reports Server (NTRS)

Valco, George J.; Rohrer, Norman J.; Pouch, John J.; Warner, Joseph D.; Bhasin, Kul B.

1988-01-01

Thin film high temperature superconductors have the potential to change the microwave technology for space communications systems. For such applications it is desirable that the films be formed on substrates such as Al2O3 which have good microwave properties. The use of ZrO2 buffer layers between Y-Ba-Cu-O and the substrate has been investigated. These superconducting films have been formed by multilayer sequential electron beam evaporation of Cu, BaF2 and Y with subsequent annealing. The three layer sequence of Y/BaF2/Cu is repeated four times for a total of twelve layers. Such a multilayer film, approximately 1 micron thick, deposited directly on SrTiO3 and annealed at 900 C for 45 min produces a film with a superconducting onset of 93 K and critical temperature of 85 K. Auger electron spectroscopy in conjunction with argon ion sputtering was used to obtain the distribution of each element as a function of depth for an unannealed film, the annealed film on SrTiO3 and annealed films on ZrO2 buffer layers. The individual layers were apparent. After annealing, the bulk of the film on SrTiO3 is observed to be fairly uniform while films on the substrates with buffer layers are less uniform. The Y-Ba-Cu-O/ZrO2 interface is broad with a long Ba tail into the ZrO2, suggesting interaction between the film and the buffer layer. The underlying ZrO2/Si interface is sharper. The detailed Auger results are presented and compared with samples annealed at different temperatures and durations.

Laser thinning for monolayer graphene formation: heat sink and interference effect.

PubMed

Han, Gang Hee; Chae, Seung Jin; Kim, Eun Sung; Güneş, Fethullah; Lee, Il Ha; Lee, Sang Won; Lee, Si Young; Lim, Seong Chu; Jeong, Hae Kyung; Jeong, Mun Seok; Lee, Young Hee

2011-01-25

Despite the availability of large-area graphene synthesized by chemical vapor deposition (CVD), the control of a uniform monolayer graphene remained challenging. Here, we report a method of acquiring monolayer graphene by laser irradiation. The accumulation of heat on graphene by absorbing light, followed by oxidative burning of upper graphene layers, which strongly relies on the wavelength of light and optical parameters of the substrate, was in situ measured by the G-band shift in Raman spectroscopy. The substrate plays a crucial role as a heat sink for the bottom monolayer graphene, resulting in no burning or etching. Oscillatory thinning behavior dependent on the substrate oxide thickness was evaluated by adopting a simple Fresnel's equation. This paves the way for future research in utilizing monolayer graphene for high-speed electronic devices.

Highly stable precursor solution containing ZnO nanoparticles for the preparation of ZnO thin film transistors.

PubMed

Huang, Heh-Chang; Hsieh, Tsung-Eong

2010-07-23

ZnO particles with an average size of about 5 nm were prepared via a sol-gel chemical route and the silane coupling agent, (3-glycidyloxypropyl)-trimethoxysilane (GPTS), was adopted to enhance the dispersion of the ZnO nanoparticles in ethyl glycol (EG) solution. A ZnO surface potential as high as 66 mV was observed and a sedimentation test showed that the ZnO precursor solution remains transparent for six months of storage, elucidating the success of surface modification on ZnO nanoparticles. The ZnO thin films were then prepared by spin coating the precursor solution on a Si wafer and annealing treatments at temperatures up to 500 degrees C were performed for subsequent preparation of ZnO thin film transistors (TFTs). Microstructure characterization revealed that the coalescence of ZnO nanoparticles occurs at temperatures as low as 200 degrees C to result in a highly uniform, nearly pore-free layer. However, annealing at higher temperatures was required to remove organic residues in the ZnO layer for satisfactory device performance. The 500 degrees C-annealed ZnO TFT sample exhibited the best electrical properties with on/off ratio = 10(5), threshold voltage = 17.1 V and mobility (micro) = 0.104 cm(2) V(-1) s(-1).

Effect of the addition of Al2O3 nanoparticles on the magnetic properties of Fe soft magnetic composites

NASA Astrophysics Data System (ADS)

Peng, Yuandong; Nie, Junwu; Zhang, Wenjun; Ma, Jian; Bao, Chongxi; Cao, Yang

2016-02-01

We investigated the effect of the addition of Al2O3 nanoparticles on the permeability and core loss of Fe soft magnetic composites coated with silicone. Fourier transform infra-red spectroscopy, scanning electron microscopy and energy-dispersive X-ray spectroscopy analysis revealed that the surface layer of the powder particles consisted of a thin insulating Al2O3 layer with uniform surface coverage. The permeability and core loss of the composite with the Al2O3 addition annealed at 650 °C were excellent. The results indicated that the Al2O3 nanoparticle addition increases the permeability stablility with changing frequency and decreases the core loss over a wide range of frequencies.

The wave numbers of supercritical surface tension driven Benard convection

NASA Technical Reports Server (NTRS)

Koschmieder, E. L.; Switzer, D. W.

1991-01-01

The cell size or the wave numbers of supercritical hexagonal convection cells in primarily surface tension driven convection on a uniformly heated plate was studied experimentally in thermal equilibrium in thin layers of silicone oil of large aspect ratio. It was found that the cell size decreases with increased temperature difference in the slightly supercritical range, and that the cell size is unique within the experimental error. It was also observed that the cell size reaches a minimum and begins to increase at larger temperature differences. This reversal of the rate of change of the wave number with temperature difference is attributed to influences of buoyancy on the fluid motion. The consequences of buoyancy were tested with three fluid layers of different depth.

The wavenumbers of supercritical surface-tension-driven Benard convection

NASA Technical Reports Server (NTRS)

Koschmieder, E. L.; Switzer, D. W.

1992-01-01

The cell size or the wavenumbers of supercritical hexagonal convection cells in primarily surface-tension-driven convection on a uniformly heated plate has been studied experimentally in thermal equilibrium in thin layers of silicone oil of large aspect ratio. It has been found that the cell size decreases with increased temperature difference in the slightly supercritical range, and that the cell size is unique within the experimental error. It has also been observed that the cell size reaches a minimum and begins to increase at larger temperature differences. This reversal of the rate of change of the wavenumber with temperature difference is attributed to influences of buoyancy on the fluid motion. The consequences of buoyancy have been tested with three fluid layers of different depth.

System for analysis of explosives

DOEpatents

Haas, Jeffrey S [San Ramon, CA

2010-06-29

A system for analysis of explosives. Samples are spotted on a thin layer chromatography plate. Multi-component explosives standards are spotted on the thin layer chromatography plate. The thin layer chromatography plate is dipped in a solvent mixture and chromatography is allowed to proceed. The thin layer chromatography plate is dipped in reagent 1. The thin layer chromatography plate is heated. The thin layer chromatography plate is dipped in reagent 2.

Analysis and Testing of Plates with Piezoelectric Sensors and Actuators

NASA Technical Reports Server (NTRS)

Bevan, Jeffrey S.

1998-01-01

Piezoelectric material inherently possesses coupling between electrostatics and structural dynamics. Utilizing linear piezoelectric theory results in an intrinsically coupled pair of piezoelectric constitutive equations. One equation describes the direct piezoelectric effect where strains produce an electric field and the other describes the converse effect where an applied electrical field produces strain. The purpose of this study is to compare finite element analysis and experiments of a thin plate with bonded piezoelectric material. Since an isotropic plate in combination with a thin piezoelectric layer constitutes a special case of a laminated composite, the classical laminated plate theory is used in the formulation to accommodated generic laminated composite panels with multiple bonded and embedded piezoelectric layers. Additionally, the von Karman large deflection plate theory is incorporated. The formulation results in laminate constitutive equations that are amiable to the inclusion of the piezoelectric constitutive equations yielding in a fully electro-mechanically coupled composite laminate. Using the finite element formulation, the governing differential equations of motion of a composite laminate with embedded piezoelectric layers are derived. The finite element model not only considers structural degrees of freedom (d.o.f.) but an additional electrical d.o.f. for each piezoelectric layer. Comparison between experiment and numerical prediction is performed by first treating the piezoelectric as a sensor and then again treating it as an actuator. To assess the piezoelectric layer as a sensor, various uniformly distributed pressure loads were simulated in the analysis and the corresponding generated voltages were calculated using both linear and nonlinear finite element analyses. Experiments were carried out by applying the same uniformly distributed loads and measuring the resulting generated voltages and corresponding maximum plate deflections. It is found that a highly nonlinear relationship exists between maximum deflection and voltage versus pressure loading. In order to assess comparisons of predicted and measured piezoelectric actuation, sinusoidal excitation voltages are simulated/applied and maximum deflections are calculated/measured. The maximum deflection as a function of time was determined using the linear finite elements analysis. Good correlation between prediction and measurement was achieved in all cases.

Blending effect of 6,13-bis(triisopropylsilylethynyl) pentacene-graphene composite layers for flexible thin film transistors with a polymer gate dielectric.

PubMed

Basu, Sarbani; Adriyanto, Feri; Wang, Yeong-Her

2014-02-28

Solution processible poly(4-vinylphenol) is employed as a transistor dielectric material for low cost processing on flexible substrates at low temperatures. A 6,13-bis (triisopropylsilylethynyl) (TIPS) pentacene-graphene hybrid semiconductor is drop cast to fabricate bottom-gate and bottom-contact field-effect transistor devices on flexible and glass substrates under an ambient air environment. A few layers of graphene flakes increase the area in the conduction channel, and form bridge connections between the crystalline regions of the semiconductor layer which can change the surface morphology of TIPS pentacene films. The TIPS pentacene-graphene hybrid semiconductor-based organic thin film transistors (OTFTs) cross-linked with a poly(4-vinylphenol) gate dielectric exhibit an effective field-effect mobility of 0.076 cm(2) V(-1) s(-1) and a threshold voltage of -0.7 V at V(gs) = -40 V. By contrast, typical TIPS pentacene shows four times lower mobility of 0.019 cm(2) V(-1) s(-1) and a threshold voltage of 5 V. The graphene/TIPS pentacene hybrids presented in this paper can enhance the electrical characteristics of OTFTs due to their high crystallinity, uniform large-grain distribution, and effective reduction of crystal misorientation of the organic semiconductor layer, as confirmed by x-ray diffraction spectroscopy, atomic force microscopy, and optical microscopy studies.

Thin films of mixed metal compounds

DOEpatents

Mickelsen, Reid A.; Chen, Wen S.

1985-01-01

A compositionally uniform thin film of a mixed metal compound is formed by simultaneously evaporating a first metal compound and a second metal compound from independent sources. The mean free path between the vapor particles is reduced by a gas and the mixed vapors are deposited uniformly. The invention finds particular utility in forming thin film heterojunction solar cells.

7 CFR 29.3152 - Lugs or Cutters (C Group).

Code of Federal Regulations, 2010 CFR

2010-01-01

... intensity, narrow, 70 percent uniform, and 30 percent injury tolerance. C1F Choice Tan Lugs. Medium to thin... uniform, and 5 percent injury tolerance. C2F Fine Tan Lugs. Medium to thin body, ripe, open, smooth... injury tolerance. C3F Good Tan Lugs. Medium to thin body, ripe, open, even, clear finish, moderate color...

7 CFR 29.3152 - Lugs or Cutters (C Group).

Code of Federal Regulations, 2011 CFR

2011-01-01

... intensity, narrow, 70 percent uniform, and 30 percent injury tolerance. C1F Choice Tan Lugs. Medium to thin... uniform, and 5 percent injury tolerance. C2F Fine Tan Lugs. Medium to thin body, ripe, open, smooth... injury tolerance. C3F Good Tan Lugs. Medium to thin body, ripe, open, even, clear finish, moderate color...

Interfacially polymerized layers for oxygen enrichment: a method to overcome Robeson's upper-bound limit.

PubMed

Tsai, Ching-Wei; Tsai, Chieh; Ruaan, Ruoh-Chyu; Hu, Chien-Chieh; Lee, Kueir-Rarn

2013-06-26

Interfacial polymerization of four aqueous phase monomers, diethylenetriamine (DETA), m-phenylenediamine (mPD), melamine (Mela), and piperazine (PIP), and two organic phase monomers, trimethyl chloride (TMC) and cyanuric chloride (CC), produce a thin-film composite membrane of polymerized polyamide layer capable of O2/N2 separation. To achieve maximum efficiency in gas permeance and O2/N2 permselectivity, the concentrations of monomers, time of interfacial polymerization, number of reactive groups in monomers, and the structure of monomers need to be optimized. By controlling the aqueous/organic monomer ratio between 1.9 and 2.7, we were able to obtain a uniformly interfacial polymerized layer. To achieve a highly cross-linked layer, three reactive groups in both the aqueous and organic phase monomers are required; however, if the monomers were arranged in a planar structure, the likelihood of structural defects also increased. On the contrary, linear polymers are less likely to result in structural defects, and can also produce polymer layers with moderate O2/N2 selectivity. To minimize structural defects while maximizing O2/N2 selectivity, the planar monomer, TMC, containing 3 reactive groups, was reacted with the semirigid monomer, PIP, containing 2 reactive groups to produce a membrane with an adequate gas permeance of 7.72 × 10(-6) cm(3) (STP) s(-1) cm(-2) cm Hg(-1) and a high O2/N2 selectivity of 10.43, allowing us to exceed the upper-bound limit of conventional thin-film composite membranes.

Micromachined Active Magnetic Regenerator for Low-Temperature Magnetic Coolers

NASA Technical Reports Server (NTRS)

Chen, Weibo; Jaeger, Michael D.

2013-01-01

A design of an Active Magnetic Regenerative Refrigeration (AMRR) system has been developed for space applications. It uses an innovative 3He cryogenic circulator to provide continuous remote/distributed cooling at temperatures in the range of 2 K with a heat sink at about 15 K. A critical component technology for this cooling system is a highly efficient active magnetic regenerator, which is a regenerative heat exchanger with its matrix material made of magnetic refrigerant gadolinium gallium garnet (GGG). Creare Inc. is developing a microchannel GGG regenerator with an anisotropic structured bed for high system thermal efficiency. The regenerator core consists of a stack of thin, single-crystal GGG disks alternating with thin polymer insulating layers. The insulating layers help minimize the axial conduction heat leak, since GGG has a very high thermal conductivity in the regenerator s operating temperature range. The GGG disks contain micro channels with width near 100 micrometers, which enhance the heat transfer between the circulating flow and the refrigerant bed. The unique flow configuration of the GGG plates ensures a uniform flow distribution across the plates. The main fabrication challenges for the regenerator are the machining of high-aspect-ratio microchannels in fragile, single-crystal GGG disks and fabrication and assembly of the GGG insulation layers. Feasibility demonstrations to date include use of an ultrashort- pulse laser to machine microchannels without producing unacceptable microcracking or deposition of recast material, as shown in the figure, and attachment of a thin insulation layer to a GGG disk without obstructing the flow paths. At the time of this reporting, efforts were focused on improving the laser machining process to increase machining speed and further reduce microcracking.

Resistive switching characteristics of manganese oxide thin film and nanoparticle assembly hybrid devices

NASA Astrophysics Data System (ADS)

Abbas, Haider; Park, Mi Ra; Abbas, Yawar; Hu, Quanli; Kang, Tae Su; Yoon, Tae-Sik; Kang, Chi Jung

2018-06-01

Improved resistive switching characteristics are demonstrated in a hybrid device with Pt/Ti/MnO (thin film)/MnO (nanoparticle)/Pt structure. The hybrid devices of MnO thin film and nanoparticle assembly were fabricated. MnO nanoparticles with an average diameter of ∼30 nm were chemically synthesized and assembled as a monolayer on a Pt bottom electrode. A MnO thin film of ∼40 nm thickness was deposited on the nanoparticle assembly to form the hybrid structure. Resistive switching could be induced by the formation and rupture of conducting filaments in the hybrid oxide layers. The hybrid device exhibited very stable unipolar switching with good endurance and retention characteristics. It showed a larger and stable memory window with a uniform distribution of SET and RESET voltages. Moreover, the conduction mechanisms of ohmic conduction, space-charge-limited conduction, Schottky emission, and Poole–Frenkel emission have been investigated as possible conduction mechanisms for the switching of the devices. Using MnO nanoparticles in the thin film and nanoparticle heterostructures enabled the appropriate control of resistive random access memory (RRAM) devices and markedly improved their memory characteristics.

Chemical bath deposition of Cu{sub 3}BiS{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deshmukh, S.G., E-mail: deshmukhpradyumn@gmail.com; Vipul, Kheraj, E-mail: vipulkheraj@gmail.com; Panchal, A.K.

2016-05-06

First time, copper bismuth sulfide (Cu{sub 3}BiS{sub 3}) thin films were synthesized on the glass substrate using simple, low-cost chemical bath deposition (CBD) technique. The synthesized parameters such as temperature of bath, pH and concentration of precursors were optimized for the deposition of uniform, well adherent Cu{sub 3}BiS{sub 3} thin films. The optical, surface morphology and structural properties of the Cu{sub 3}BiS{sub 3} thin films were studied using UV-VIS-NIR spectra, scanning electron microscopy (SEM) and X-ray diffraction (XRD). The as- synthesized Cu{sub 3}BiS{sub 3} film exhibits a direct band gap 1.56 to 1.58 eV having absorption coefficient of the ordermore » of 10{sup 5} cm{sup −1}. The XRD declares the amorphous nature of the films. SEM images shows films were composed of close-packed fine spherical nanoparticles of 70-80 nm in diameter. The chemical composition of the film was almost stoichiometric. The optical study indicates that the Cu{sub 3}BiS{sub 3} films can be applied as an absorber layer for thin film solar cells.« less

Plasma-Assisted Atomic Layer Deposition of High-Density Ni Nanoparticles for Amorphous In-Ga-Zn-O Thin Film Transistor Memory.

PubMed

Qian, Shi-Bing; Wang, Yong-Ping; Shao, Yan; Liu, Wen-Jun; Ding, Shi-Jin

2017-12-01

For the first time, the growth of Ni nanoparticles (NPs) was explored by plasma-assisted atomic layer deposition (ALD) technique using NiCp 2 and NH 3 precursors. Influences of substrate temperature and deposition cycles on ALD Ni NPs were studied by field emission scanning electron microscope and X-ray photoelectron spectroscopy. By optimizing the process parameters, high-density and uniform Ni NPs were achieved in the case of 280 °C substrate temperature and 50 deposition cycles, exhibiting a density of ~1.5 × 10 12  cm -2 and a small size of 3~4 nm. Further, the above Ni NPs were used as charge storage medium of amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistor (TFT) memory, demonstrating a high storage capacity for electrons. In particular, the nonvolatile memory exhibited an excellent programming characteristic, e.g., a large threshold voltage shift of 8.03 V was obtained after being programmed at 17 V for 5 ms.

Method for materials deposition by ablation transfer processing

DOEpatents

Weiner, Kurt H.

1996-01-01

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs.

Effect of Rheological Properties on Liquid Curtain Coating

NASA Astrophysics Data System (ADS)

Mohammad Karim, Alireza; Suszynski, Wieslaw; Griffith, William; Pujari, Saswati; Carvalho, Marcio; Francis, Lorraine; Dow Chemical Company Collaboration; PUC-Rio Collaboration

2017-11-01

Curtain coating is one of the preferred methods for high-speed precision application of single-layer and multi-layer coatings in technology. However, uniform coatings are only obtained in a certain range of operating parameters, called coating window. The two main physical mechanisms that limit successful curtain coating are liquid curtain breakup and air entrainment. The rheological properties of the liquid play an important role on these mechanisms, but the fundamental understanding of these relations is still not complete. The effect of rate-dependent shear and extensional viscosities on the stability of viscoelastic and shear thinning liquid curtains were explored by high-speed visualization. Aqueous solutions of polyethylene oxide (PEO) and polyethylene glycol (PEG) were used as viscoelastic liquids. Xanthan Gum in water and glycerol solutions with a range of compositions were used as shear thinning liquids. The critical condition was determined by examining flow rate below which curtain broke. In this work, we also analyze relative importance of rate-dependent shear and extensional viscosity on both curtain breakup and air entrainment. We would like to acknowledge the financial support from the Dow Chemical Company.

Organic-Inorganic Hybrid Perovskite with Controlled Dopant Modification and Application in Photovoltaic Device.

PubMed

Zhao, Wangen; Yang, Dong; Liu, Shengzhong Frank

2017-07-01

Organic-inorganic hybrid perovskite as a kind of promising photovoltaic material is booming due to its low-cost, high defect tolerance, and easy fabrication, which result in the huge potential in industrial production. In the pursuit of high efficiency photovoltaic devices, high-quality absorbing layer is essential. Therefore, developing organic-inorganic hybrid perovskite thin films with good coverage, improved uniformity, and crystalline in a single pass deposition is of great concern in realizing good performance of perovskite thin-film solar cell. Here, it is found that the introduction of suitable amounts of LiI plays a dramatically positive role in enlarging the grain size and reducing the grain boundaries of absorbing layer. In addition, the carrier lifetime and built-in potential of the LiI doped perovskite device are observed to increase. Thus, it leads to about 15% gain in solar cell efficiency comparing to that without the LiI doping. Meanwhile, a hysteresis reduction is observed and 18.16% power conversion efficiency is achieved in LiI doped perovskite device, as well. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Interfacial growth of large-area single-layer metal-organic framework nanosheets

PubMed Central

Makiura, Rie; Konovalov, Oleg

2013-01-01

The air/liquid interface is an excellent platform to assemble two-dimensional (2D) sheets of materials by enhancing spontaneous organizational features of the building components and encouraging large length scale in-plane growth. We have grown 2D molecularly-thin crystalline metal-organic-framework (MOF) nanosheets composed of porphyrin building units and metal-ion joints (NAFS-13) under operationally simple ambient conditions at the air/liquid interface. In-situ synchrotron X-ray diffraction studies of the formation process performed directly at the interface were employed to optimize the NAFS-13 growth protocol leading to the development of a post-injection method –post-injection of the metal connectors into the water subphase on whose surface the molecular building blocks are pre-oriented– which allowed us to achieve the formation of large-surface area morphologically-uniform preferentially-oriented single-layer nanosheets. The growth of such large-size high-quality sheets is of interest for the understanding of the fundamental physical/chemical properties associated with ultra-thin sheet-shaped materials and the realization of their use in applications. PMID:23974345

Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors

NASA Astrophysics Data System (ADS)

Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia

We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..

Material growth and characterization directed toward improving III-V heterojunction solar cells

NASA Technical Reports Server (NTRS)

Stefanakos, E. K.; Alexander, W. E.; Collis, W.; Abul-Fadl, A.

1979-01-01

In addition to the existing materials growth laboratory, the photolithographic facility and the device testing facility were completed. The majority of equipment for data acquisition, solar cell testing, materials growth and device characterization were received and are being put into operation. In the research part of the program, GaAs and GaA1As layers were grown reproducibly on GaAs substrates. These grown layers were characterized as to surface morphology, thickness and thickness uniformity. The liquid phase epitaxial growth process was used to fabricate p-n junctions in Ga(1-x)A1(x)As. Sequential deposition of two alloy layers was accomplished and detailed analysis of the effect of substrate quality and dopant on the GaA1As layer quality is presented. Finally, solar cell structures were formed by growing a thin p-GaA1As layer upon an epitaxial n-GaA1As layer. The energy gap corresponding to the long wavelength cutoff of the spectral response characteristic was 1.51-1.63 eV. Theoretical calculations of the spectral response were matched to the measured response.

21 CFR 862.2270 - Thin-layer chromatography system for clinical use.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 21 Food and Drugs 8 2010-04-01 2010-04-01 false Thin-layer chromatography system for clinical use... Instruments § 862.2270 Thin-layer chromatography system for clinical use. (a) Identification. A thin-layer... a mixture. The mixture of compounds is absorbed onto a stationary phase or thin layer of inert...

Review of recent progresses on flexible oxide semiconductor thin film transistors based on atomic layer deposition processes

NASA Astrophysics Data System (ADS)

Sheng, Jiazhen; Han, Ki-Lim; Hong, TaeHyun; Choi, Wan-Ho; Park, Jin-Seong

2018-01-01

The current article is a review of recent progress and major trends in the field of flexible oxide thin film transistors (TFTs), fabricating with atomic layer deposition (ALD) processes. The ALD process offers accurate controlling of film thickness and composition as well as ability of achieving excellent uniformity over large areas at relatively low temperatures. First, an introduction is provided on what is the definition of ALD, the difference among other vacuum deposition techniques, and the brief key factors of ALD on flexible devices. Second, considering functional layers in flexible oxide TFT, the ALD process on polymer substrates may improve device performances such as mobility and stability, adopting as buffer layers over the polymer substrate, gate insulators, and active layers. Third, this review consists of the evaluation methods of flexible oxide TFTs under various mechanical stress conditions. The bending radius and repetition cycles are mostly considering for conventional flexible devices. It summarizes how the device has been degraded/changed under various stress types (directions). The last part of this review suggests a potential of each ALD film, including the releasing stress, the optimization of TFT structure, and the enhancement of device performance. Thus, the functional ALD layers in flexible oxide TFTs offer great possibilities regarding anti-mechanical stress films, along with flexible display and information storage application fields. Project supported by the National Research Foundation of Korea (NRF) (No. NRF-2017R1D1A1B03034035), the Ministry of Trade, Industry & Energy (No. #10051403), and the Korea Semiconductor Research Consortium.

Method of transferring a thin crystalline semiconductor layer

DOEpatents

Nastasi, Michael A [Sante Fe, NM; Shao, Lin [Los Alamos, NM; Theodore, N David [Mesa, AZ

2006-12-26

A method for transferring a thin semiconductor layer from one substrate to another substrate involves depositing a thin epitaxial monocrystalline semiconductor layer on a substrate having surface contaminants. An interface that includes the contaminants is formed in between the deposited layer and the substrate. Hydrogen atoms are introduced into the structure and allowed to diffuse to the interface. Afterward, the thin semiconductor layer is bonded to a second substrate and the thin layer is separated away at the interface, which results in transferring the thin epitaxial semiconductor layer from one substrate to the other substrate.

Graphene-silicon layered structures on single-crystalline Ir(111) thin films

DOE PAGES

Que, Yande D.; Tao, Jing; Zhang, Yong; ...

2015-01-20

Epitaxial growth of graphene on transition metal crystals, such as Ru,⁽¹⁻³⁾ Ir,⁽⁴⁻⁶⁾ and Ni,⁽⁷⁾ provides large-area, uniform graphene layers with controllable defect density, which is crucial for practical applications in future devices. To decrease the high cost of single-crystalline metal bulks, single-crystalline metal films are strongly suggested as the substrates for epitaxial growth large-scale high-quality graphene.⁽⁸⁻¹⁰⁾ Moreover, in order to weaken the interactions of graphene with its metal host, which may result in a suppression of the intrinsic properties of graphene,⁽¹¹ ¹²⁾ the method of element intercalation of semiconductors at the interface between an epitaxial graphene layer and a transitionmore » metal substrate has been successfully realized.⁽¹³⁻¹⁶⁾« less

Large-area synthesis of WSe2 from WO3 by selenium-oxygen ion exchange

NASA Astrophysics Data System (ADS)

Browning, Paul; Eichfeld, Sarah; Zhang, Kehao; Hossain, Lorraine; Lin, Yu-Chuan; Wang, Ke; Lu, Ning; Waite, A. R.; Voevodin, A. A.; Kim, Moon; Robinson, Joshua A.

2015-03-01

Few-layer tungsten diselenide (WSe2) is attractive as a next-generation electronic material as it exhibits modest carrier mobilities and energy band gap in the visible spectra, making it appealing for photovoltaic and low-powered electronic applications. Here we demonstrate the scalable synthesis of large-area, few-layer WSe2 via replacement of oxygen in hexagonally stabilized tungsten oxide films using dimethyl selenium. Cross-sectional transmission electron microscopy reveals successful control of the final WSe2 film thickness through control of initial tungsten oxide thickness, as well as development of layered films with grain sizes up to several hundred nanometers. Raman spectroscopy and atomic force microscopy confirms high crystal uniformity of the converted WSe2, and time domain thermo-reflectance provide evidence that near record low thermal conductivity is achievable in ultra-thin WSe2 using this method.

Mirrors for High Resolution X-Ray Optics---Figure Preserving IR/PT Coating

NASA Technical Reports Server (NTRS)

Chan, Kai-Wing; Olsen, Lawrence; Sharpe, Marton; Numata, Ai; McClelland, Ryan; Saha, Timo; Zhang, Will

2016-01-01

Coating stress of 10 - 20 nm of Ir is sufficiently high to distort the figure of arc-second thin lightweight mirrors. For iridium: --Stress sigma 4 GPa for 15 nm film implies 60 Nm integrated stress-- Need less than 3 N/m (or stress less than 200 MPa) for sub-arcsecond optics. Basic Approaches for Mitigation. A. Annealing the film-- Glass can be heat up to 400 C without distortion. Silicon is even more resistant.-- It was found that recovery is limited by residual thermal stress from taking the mirror down from high T. B. Coating bi-layer films with compressive stress with tensile stress. C. Front-and-back coating with magnetron sputtering or atomic layer deposition-- Sputtering involve spanning of substrates. Geometric difference in setup (convexness/concaveness of curved mirrors) does not permit precise front-and-back matching-- Atomic layer deposition can provide a uniform deposition front and back simultaneously.

Development of aerogel-lined targets for inertial confinement fusion experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Braun, Tom

2013-03-28

This thesis explores the formation of ICF compatible foam layers inside of an ablator shell used for inertial confinement fusion experiments at the National Ignition Facility. In particular, the capability of p- DCPD polymer aerogels to serve as a scaffold for the deuterium-tritium mix was analyzed. Four different factors were evaluated: the dependency of different factors such as thickness or composition of a precursor solution on the uniformity of the aerogel layer, how to bring the optimal composition inside of the ablator shell, the mechanical stability of ultra-low density p-DCPD aerogel bulk pieces during wetting and freezing with hydrogen, andmore » the wetting behavior of thin polymer foam layers in HDC carbon ablator shells with liquid deuterium. The research for thesis was done at Lawrence Livermore National Laboratory in cooperation with the Technical University Munich.« less

Three-Dimensional Porous Particles Composed of Curved, Two-Dimensional, Nano-Sized Layers for Li-Ion Batteries

NASA Technical Reports Server (NTRS)

Yushin, Gleb; Evanoff, Kara; Magasinski, Alexander

2012-01-01

Thin Si films coated on porous 3D particles composed of curved 2D graphene sheets have been synthesized utilizing techniques that allow for tunable properties. Since graphene exhibits specific surface area up to 100 times higher than carbon black or graphite, the deposition of the same mass of Si on graphene is much faster in comparison -- a factor which is important for practical applications. In addition, the distance between graphene layers is tunable and variation in the thickness of the deposited Si film is feasible. Both of these characteristics allow for optimization of the energy and power characteristics. Thicker films will allow higher capacity, but slower rate capabilities. Thinner films will allow more rapid charging, or higher power performance. In this innovation, uniform deposition of Si and C layers on high-surface area graphene produced granules with specific surface area (SSA) of 5 sq. m/g.

Liquid-Phase Epitaxial Growth of ZnS, ZnSe and Their Mixed Compounds Using Te as Solvent

NASA Astrophysics Data System (ADS)

Nakamura, Hiroshi; Aoki, Masaharu

1981-01-01

Epitaxial layers of ZnS, ZnSe and their mixed compounds were grown on ZnS substrates by the liquid-phase epitaxial growth (LPE) method using Te as the solvent. The open-tube slide-boat technique was used, and a suitable starting temperature for growth was found to be 850°C for ZnS and 700-800°C for ZnSe. The ZnS epitaxial layers grown on {111}A and {111}B oriented ZnS substrates were thin (˜1 μm) and smooth, had low, uniform Te concentrations (˜0.1 at.%) and were highly luminescent. The ZnSe epitaxial layers were relatively thick (10-30 μm) and had fairly high Te concentrations (a few at.%). Various mixed compound ZnS1-xSex were also grown on ZnS substrates.

Application of Coaxial Ion Gun for Film Generation and Ion Implantation

NASA Astrophysics Data System (ADS)

Takatsu, Mikio; Asai, Tomohiko; Kurumi, Satoshi; Suzuki, Kaoru; Hirose, Hideharu; Masutani, Shigeyuki

A magnetized coaxial plasma gun (MCPG) is here utilized for deposition on high-melting-point metals. MCPGs have hitherto been studied mostly in the context of nuclear fusion research, for particle and magnetic helicity injection and spheromak formation. During spheromak formation, the electrode materials are ionized and mixed into the plasmoid. In this study, this ablation process by gun-current sputtering is enhanced for metallic thin-film generation. In the proposed system geometry, only ionized materials are electromagnetically accelerated by the self-Lorentz force, with ionized operating gas as a magnetized thermal plasmoid, contributing to the thin-film deposition. This reduces the impurity and non-uniformity of the deposited thin-film. Furthermore, as the ions are accelerated in a parallel direction to the injection axis, vertical implantation of the ions into the substrate surface is achieved. To test a potential application of the developed system, experiments were conducted involving the formation of a buffer layer on hard ceramics, for use in dental materials.

Optical properties and surface topography of CdCl2 activated CdTe thin films

NASA Astrophysics Data System (ADS)

Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-05-01

The effect of post-CdCl2 heat treatment on optical properties and surface topography of evaporated CdTe thin films is investigated. The pristine and thermally annealed films were subjected to UV-Vis spectrophotometer and atomic force microscopy (AFM) to investigate the optical properties and surface topography, respectively. The absorbance is found to be maximum (˜90%) at 320°C temperature and transmittance found to be minimum and almost constant in ultraviolet and visible regions. The direct band gap is increased from 1.42 eV to 2.12 eV with post-CdCl2 annealing temperature. The surface topography revealed that the uniformity is improved with annealing temperature and average surface roughness is found in the range of 83.3-144.3 nm as well as grains have cylindrical hill-like shapes. The investigated results indicate that the post-CdCl2 treated films annealed at 320°C may be well-suitable for thin film solar cells as an absorber layer.

Design of a 1200-V ultra-thin partial SOI LDMOS with n-type buried layer

NASA Astrophysics Data System (ADS)

Qiao, Ming; Wang, Yuru; Li, Yanfei; Zhang, Bo; Li, Zhaoji

2014-11-01

A novel 1200-V ultra-thin partial silicon-on-insulator (PSOI) lateral double-diffusion metal oxide semiconductor (LDMOS) with n-type buried (n-buried) layer (NBL PSOI LDMOS) is proposed in this paper. The new PSOI LDMOS features an n-buried layer underneath the n-type drift (n-drift) region close to the source side, providing a large conduction region for majority carriers and a silicon window to improve self-heating effect (SHE). A combination of uniform and linear variable doping (ULVD) profile is utilized in the n-drift region, which alleviates the inherent tradeoff between specific on-resistance (Ron,sp) and breakdown voltage (BV). With the n-drift region length of 80 μm, the NBL PSOI LDMOS obtains a high BV of 1243 V which is improved by around 105 V in comparison to the conventional SOI LDMOS with linear variable doping (LVD) profile for the n-drift region (LVD SOI LDMOS). Besides, the 1200-V NBL PSOI LDMOS has a lower maximum temperature (Tmax) of 333 K at a power (P) of 1 mW/μm which is reduced by around 61 K. Meanwhile, Ron,sp and Tmax of the NBL PSOI LDMOS are lower than those of the conventional LVD SOI LDMOS for a wide range of BV.

Channel length dependence of negative-bias-illumination-stress in amorphous-indium-gallium-zinc-oxide thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Um, Jae Gwang; Mativenga, Mallory; Jang, Jin, E-mail: jjang@khu.ac.kr

2015-06-21

We have investigated the dependence of Negative-Bias-illumination-Stress (NBIS) upon channel length, in amorphous-indium-gallium-zinc-oxide (a-IGZO) thin-film transistors (TFTs). The negative shift of the transfer characteristic associated with NBIS decreases for increasing channel length and is practically suppressed in devices with L = 100-μm. The effect is consistent with creation of donor defects, mainly in the channel regions adjacent to source and drain contacts. Excellent agreement with experiment has been obtained by an analytical treatment, approximating the distribution of donors in the active layer by a double exponential with characteristic length L{sub D} ∼ L{sub n} ∼ 10-μm, the latter being the electron diffusion length. The model alsomore » shows that a device with a non-uniform doping distribution along the active layer is in all equivalent, at low drain voltages, to a device with the same doping averaged over the active layer length. These results highlight a new aspect of the NBIS mechanism, that is, the dependence of the effect upon the relative magnitude of photogenerated holes and electrons, which is controlled by the device potential/band profile. They may also provide the basis for device design solutions to minimize NBIS.« less

Triboelectric generator

DOEpatents

Wang, Zhong L; Fan, Fengru; Lin, Long; Zhu, Guang; Pan, Caofeng; Zhou, Yusheng

2015-11-03

A generator includes a thin first contact charging layer and a thin second contact charging layer. The thin first contact charging layer includes a first material that has a first rating on a triboelectric series. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer includes a second material that has a second rating on a triboelectric series that is more negative than the first rating. The thin first contact charging layer has a first side with a first conductive electrode applied thereto and an opposite second side. The thin second contact charging layer is disposed adjacent to the first contact charging layer so that the second side of the second contact charging layer is in contact with the second side of the first contact charging layer.

Atomic layer deposition of two dimensional MoS{sub 2} on 150 mm substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Valdivia, Arturo; Conley, John F., E-mail: jconley@eecs.oregonstate.edu; Tweet, Douglas J.

2016-03-15

Low temperature atomic layer deposition (ALD) of monolayer to few layer MoS{sub 2} uniformly across 150 mm diameter SiO{sub 2}/Si and quartz substrates is demonstrated. Purge separated cycles of MoCl{sub 5} and H{sub 2}S precursors are used at reactor temperatures of up to 475 °C. Raman scattering studies show clearly the in-plane (E{sup 1}{sub 2g}) and out-of-plane (A{sub 1g}) modes of MoS{sub 2}. The separation of the E{sup 1}{sub 2g} and A{sub 1g} peaks is a function of the number of ALD cycles, shifting closer together with fewer layers. X-ray photoelectron spectroscopy indicates that stoichiometry is improved by postdeposition annealing in amore » sulfur ambient. High resolution transmission electron microscopy confirms the atomic spacing of monolayer MoS{sub 2} thin films.« less

Recent results of the Defect-Induced Mix Experiments (DIME) on NIF

NASA Astrophysics Data System (ADS)

Schmitt, M. J.; Bradley, P. A.; Cobble, J. A.; Hakel, P.; Hsu, S. C.; Krasheninnikova, N. S.; Kyrala, G. A.; Murphy, T. J.; Obrey, K. A.; Shah, R. C.; Tregillis, I. L.; Craxton, S. C.; McKenty, P. W.; Mancini, R. C.; Johns, H. M.; Joshi, Tirtha; Mayes, Daniel

2012-10-01

Investigations of directly driven implosions have been performed including experiments on Omega, and more recently NIF, to deduce the extent and uniformity of 4π and defect-induced mix near the shell/gas interface of plastic (CH) capsules filled with 5 atm D2 gas. Imaging diagnostics are used to measure the spatial variation of mix caused by the growth of non-uniformities in both capsule and laser drive characteristics. Thin (2μm) layers containing 1-2% (atomic) mid-Z dopants are imaged spectrally at late time in the implosion using multiple monochromatic imaging of H-like and He-like atomic line emission. Areal image backlighting of the capsules provides both r(t) and the symmetry of the implosion. Recent results will be shown including inferred 4π mix width, laser imprint induced mix, and mix from capsule variations.

Manipulating femtosecond laser interactions in bulk glass and thin-film with spatial light modulation (Conference Presentation)

NASA Astrophysics Data System (ADS)

Alimohammadian, Ehsan; Ho, Stephen; Ertorer, Erden; Gherghe, Sebastian; Li, Jianzhao; Herman, Peter R.

2017-03-01

Spatial Light Modulators (SLM) are emerging as a power tool for laser beam shaping whereby digitally addressed phase shifts can impose computer-generated hologram patterns on incoming laser light. SLM provide several additional advantages with ultrashort-pulsed lasers in controlling the shape of both surface and internal interactions with materials. Inside transparent materials, nonlinear optical effects can confine strong absorption only to the focal volume, extend dissipation over long filament tracks, or reach below diffraction-limited spot sizes. Hence, SLM beam shaping has been widely adopted for laser material processing applications that include parallel structuring, filamentation, fiber Bragg grating formation and optical aberration correction. This paper reports on a range of SLM applications we have studied in femtosecond processing of transparent glasses and thin films. Laser phase-fronts were tailored by the SLM to compensate for spherical surface aberration, and to further address the nonlinear interactions that interplay between Kerr-lens self-focusing and plasma defocusing effects over shallow and deep focusing inside the glass. Limits of strong and weak focusing were examined around the respective formation of low-loss optical waveguides and long uniform filament tracks. Further, we have employed the SLM for beam patterning inside thin film, exploring the limits of phase noise, resolution and fringe contrast during interferometric intra-film structuring. Femtosecond laser pulses of 200 fs pulse duration and 515 nm wavelength were shaped by a phase-only LCOS-SLM (Hamamatsu X10468-04). By imposing radial phase profiles, axicon, grating and beam splitting gratings, volume shape control of filament diameter, length, and uniformity as well as simultaneous formation of multiple filaments has been demonstrated. Similarly, competing effects of spherical surface aberration, self-focusing, and plasma de-focusing were studied and delineated to enable formation of low-loss optical waveguides over shallow and deep focusing conditions. Lastly, SLM beam shaping has been successfully extended to interferometric processing inside thin transparent film, enabling the arbitrary formation of uniform or non-uniform, symmetric or asymmetric patterns of flexible shape on nano-scale dimensions without phase-noise degradation by the SLM patterning. We present quantized structuring of thin films by a single laser pulse, demonstrating λ/2nfilm layer ejection control, blister formation, nano-cavities, and film colouring. Closed intra-film nanochannels with high aspect ratio (20:1) have been formed inside 3.5 um thick silica, opening new prospects for sub-cellular studies and lab-in-film concepts that integrate on CMOS silicon technologies.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications.

PubMed

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-17

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Wrinkle-free graphene electrodes in zinc tin oxide thin-film transistors for large area applications

NASA Astrophysics Data System (ADS)

Lee, Se-Hee; Kim, Jae-Hee; Park, Byeong-Ju; Park, Jozeph; Kim, Hyun-Suk; Yoon, Soon-Gil

2017-02-01

Wrinkle-free graphene was used to form the source-drain electrodes in thin film transistors based on a zinc tin oxide (ZTO) semiconductor. A 10 nm thick titanium adhesion layer was applied prior to transferring a conductive graphene film on top of it by chemical detachment. The formation of an interlayer oxide between titanium and graphene allows the achievement of uniform surface roughness over the entire substrate area. The resulting devices were thermally treated in ambient air, and a substantial decrease in field effect mobility is observed with increasing annealing temperature. The increase in electrical resistivity of the graphene film at higher annealing temperatures may have some influence, however the growth of the oxide interlayer at the ZTO/Ti boundary is suggested to be most influential, thereby inducing relatively high contact resistance.

Spin-dependent tunneling effects in magnetic tunnel junctions

NASA Astrophysics Data System (ADS)

Gao, Li

2009-03-01

It has long been known that current extracted from magnetic electrodes through ultra thin oxide tunnel barriers is spin polarized. This current gives rise to two important properties: tunneling magnetoresistance (TMR) when the tunnel barrier is sandwiched between two thin magnetic electrodes and, spin momentum transfer, which can be used to manipulate the magnetic state of the magnetic electrodes. In the first part of my talk I show how the structure of thin CoFe layers can be made amorphous by simply sandwiching them between two amorphous layers, one of them the tunnel barrier. No glass forming elements are needed. By slightly changing the thickness of these layers or by heating them above their glass transition temperature they become crystalline. Surprisingly, the TMR of the amorphous structure is significantly higher than of its crystalline counterpart. The tunneling anisotropic magnetoresistance, which has complex voltage dependence, is also discussed. In the second part of my talk I discuss the microwave emission spectrum from magnetic tunnel junctions induced by spin torque from spin polarized dc current passed through the device. We show that the spectrum is very sensitive to small variations in device structures, even in those devices which exhibit similarly high TMR (˜120%) and which have similar resistance-area products (˜4-10 φμm^2). We speculate that these variations are due to non-uniform spatial magnetic excitation arising from inhomogeneous current flow through the tunnel barrier. [In collaboration with Xin Jiang, M. Hayashi, Rai Moriya, Brian Hughes, Teya Topuria, Phil Rice, and Stuart S.P. Parkin

Carbide coated fibers in graphite-aluminum composites

NASA Technical Reports Server (NTRS)

Imprescia, R. J.; Levinson, L. S.; Reiswig, R. D.; Wallace, T. C.; Williams, J. M.

1975-01-01

The study of protective-coupling layers of refractory metal carbides on the graphite fibers prior to their incorporation into composites is presented. Such layers should be directly wettable by liquid aluminum and should act as diffusion barriers to prevent the formation of aluminum carbide. Chemical vapor deposition was used to uniformly deposit thin, smooth, continuous coats of ZrC on the carbon fibers of tows derived from both rayon and polyacrylonitrile. A wet chemical coating of the fibers, followed by high-temperature treatment, was used, and showed promise as an alternative coating method. Experiments were performed to demonstrate the ability of aluminum alloys to wet carbide surfaces. Titanium carbide, zirconium carbide and carbide-coated graphite surfaces were successfully wetted. Results indicate that initial attempts to wet surfaces of ZrC-coated carbon fibers appear successful.

RF-plasma vapor deposition of siloxane on paper. Part 1: Physical evolution of paper surface

NASA Astrophysics Data System (ADS)

Sahin, Halil Turgut

2013-01-01

An alternative, new approach to improve the hydrophobicity and barrier properties of paper was evaluated by radio-frequency (RF) plasma octamethylcyclotetrasiloxane (OMCTSO) vapor treatment. The interaction between OMCTSO and paper, causing the increased hydophobicity, is likely through covalent bonding. The deposited thin silicone-like polymeric layer from OMCTSO plasma treatment possessed desirable hydrophobic properties. The SEM micrographs showed uniformly distributed grainy particles with various shapes on the paper surface. Deposition of the silicone polymer-like layer with the plasma treatment affects the distribution of voids in the network structure and increases the barrier against water intake and air. The water absorptivity was reduced by 44% for the OMCTSO plasma treated sheet. The highest resistance to air flow was an approximately 41% lower air permeability than virgin paper.

Excitonic effects in dense media: breakdown of intrinsic optical bistability

NASA Astrophysics Data System (ADS)

Yudson, V. I.; Reineker, P.

1994-12-01

The steady-state nonlinear response to optical excitation is studied for a thin layer containing “two-level-atoms” (TLA). For a high density of TLAs their dipole-dipole interaction and finite excitonic bandwidth effects become important. We demonstrate that the commonly used local-field approximation ignoring excitonic band effects breaks down. Considering a system of ordered TLAs corresponding to Frenkel excitons in molecular crystals we show that excitonic effects cause an instability of spatially uniform solutions and decrease drastically the existence range of the intrinsic optical bistability of a layer. The possibility of “fast instability”, developing with an increment large in comparison with relaxation rates and the Rabi frequency, also raises the question whether the local field approximation still holds for the description of transient optical phenomena in dense media.

Excitonic effects in dense media: breakdown of intrinsic optical bistability

NASA Astrophysics Data System (ADS)

Yudson, V. I.; Reineker, P.

The steady-state nonlinear response to optical excitation is studied for a thin layer containing “two-level-atoms” (TLA). For a high density of TLAs their dipole-dipole interaction and finite excitonic bandwidth effects become important. We demonstrate that the commonly used local-field approximation ignoring excitonic band effects breaks down. Considering a system of ordered TLAs corresponding to Frenkel excitons in molecular crystals we show that excitonic effects cause an instability of spatially uniform solutions and decrease drastically the existence range of the intrinsic optical bistability of a layer. The possibility of “fast instability”, developing with an increment large in comparison with relaxation rates and the Rabi frequency, also raises the question whether the local field approximation still holds for the description of transient optical phenomena in dense media.

A uniform doping ultra-thin SOI LDMOS with accumulation-mode extended gate and back-side etching technology

NASA Astrophysics Data System (ADS)

Yan-Hui, Zhang; Jie, Wei; Chao, Yin; Qiao, Tan; Jian-Ping, Liu; Peng-Cheng, Li; Xiao-Rong, Luo

2016-02-01

A uniform doping ultra-thin silicon-on-insulator (SOI) lateral-double-diffused metal-oxide-semiconductor (LDMOS) with low specific on-resistance (Ron,sp) and high breakdown voltage (BV) is proposed and its mechanism is investigated. The proposed LDMOS features an accumulation-mode extended gate (AG) and back-side etching (BE). The extended gate consists of a P- region and two diodes in series. In the on-state with VGD > 0, an electron accumulation layer is formed along the drift region surface under the AG. It provides an ultra-low resistance current path along the whole drift region surface and thus the novel device obtains a low temperature distribution. The Ron,sp is nearly independent of the doping concentration of the drift region. In the off-state, the AG not only modulates the surface electric field distribution and improves the BV, but also brings in a charge compensation effect to further reduce the Ron,sp. Moreover, the BE avoids vertical premature breakdown to obtain high BV and allows a uniform doping in the drift region, which avoids the variable lateral doping (VLD) and the “hot-spot” caused by the VLD. Compared with the VLD SOI LDMOS, the proposed device simultaneously reduces the Ron,sp by 70.2% and increases the BV from 776 V to 818 V. Project supported by the National Natural Science Foundation of China (Grant Nos. 61176069 and 61376079).

Boundary layers at the interface of two different shear flows

NASA Astrophysics Data System (ADS)

Weidman, Patrick D.; Wang, C. Y.

2018-05-01

We present solutions for the boundary layer between two uniform shear flows flowing in the same direction. In the upper layer, the flow has shear strength a, fluid density ρ1, and kinematic viscosity ν1, while the lower layer has shear strength b, fluid density ρ2, and kinematic viscosity ν2. Similarity transformations reduce the boundary-layer equations to a pair of ordinary differential equations governed by three dimensionless parameters: the shear strength ratio γ = b/a, the density ratio ρ = ρ2/ρ1, and the viscosity ratio ν = ν2/ν1. Further analysis shows that an affine transformation reduces this multi-parameter problem to a single ordinary differential equation which may be efficiently integrated as an initial-value problem. Solutions of the original boundary-value problem are shown to agree with the initial-value integrations, but additional dual and quadruple solutions are found using this method. We argue on physical grounds and through bifurcation analysis that these additional solutions are not tenable. The present problem is applicable to the trailing edge flow over a thin airfoil with camber.

Synthesis of millimeter-scale transition metal dichalcogenides single crystals

DOE PAGES

Gong, Yongji; Ye, Gonglan; Lei, Sidong; ...

2016-02-10

The emergence of semiconducting transition metal dichalcogenide (TMD) atomic layers has opened up unprecedented opportunities in atomically thin electronics. Yet the scalable growth of TMD layers with large grain sizes and uniformity has remained very challenging. Here is reported a simple, scalable chemical vapor deposition approach for the growth of MoSe2 layers is reported, in which the nucleation density can be reduced from 105 to 25 nuclei cm -2, leading to millimeter-scale MoSe 2 single crystals as well as continuous macrocrystalline films with millimeter size grains. The selective growth of monolayers and multilayered MoSe2 films with well-defined stacking orientation canmore » also be controlled via tuning the growth temperature. In addition, periodic defects, such as nanoscale triangular holes, can be engineered into these layers by controlling the growth conditions. The low density of grain boundaries in the films results in high average mobilities, around ≈42 cm 2 V -1 s -1, for back-gated MoSe 2 transistors. This generic synthesis approach is also demonstrated for other TMD layers such as millimeter-scale WSe 2 single crystals.« less

A survey of heating and turbulent boundary layer characteristics of several hypersonic research aircraft configurations

NASA Technical Reports Server (NTRS)

Lawing, P. L.

1981-01-01

Four of the configurations investigated during a proposed NASA-Langley hypersonic research aircraft program were selected for phase-change-paint heat-transfer testing and forebody boundary layer pitot surveys. In anticipation of future hypersonic aircraft, both published and unpublished data and results are reviewed and presented with the purpose of providing a synoptic heat-transfer data base from the research effort. Engineering heat-transfer predictions are compared with experimental data on both a global and a local basis. The global predictions are shown to be sufficient for purposes of configuration development, and even the local predictions can be adequate when interpreted in light of the proper flow field. In that regard, cross flow in the forebody boundary layers was examined for significant heating and aerodynamic effect on the scramjet engines. A design philosophy which evolved from the research airplane effort is used to design a forebody shape that produces thin, uniform, forebody boundary layers on a hypersonic airbreathing missile. Finally, heating/boundary layer phenomena which are not predictable with state-of-the-art knowledge and techniques are shown and discussed.

Enceladus's crust as a non-uniform thin shell: I tidal deformations

NASA Astrophysics Data System (ADS)

Beuthe, Mikael

2018-03-01

The geologic activity at Enceladus's south pole remains unexplained, though tidal deformations are probably the ultimate cause. Recent gravity and libration data indicate that Enceladus's icy crust floats on a global ocean, is rather thin, and has a strongly non-uniform thickness. Tidal effects are enhanced by crustal thinning at the south pole, so that realistic models of tidal tectonics and dissipation should take into account the lateral variations of shell structure. I construct here the theory of non-uniform viscoelastic thin shells, allowing for depth-dependent rheology and large lateral variations of shell thickness and rheology. Coupling to tides yields two 2D linear partial differential equations of the fourth order on the sphere which take into account self-gravity, density stratification below the shell, and core viscoelasticity. If the shell is laterally uniform, the solution agrees with analytical formulas for tidal Love numbers; errors on displacements and stresses are less than 5% and 15%, respectively, if the thickness is less than 10% of the radius. If the shell is non-uniform, the tidal thin shell equations are solved as a system of coupled linear equations in a spherical harmonic basis. Compared to finite element models, thin shell predictions are similar for the deformations due to Enceladus's pressurized ocean, but differ for the tides of Ganymede. If Enceladus's shell is conductive with isostatic thickness variations, surface stresses are approximately inversely proportional to the local shell thickness. The radial tide is only moderately enhanced at the south pole. The combination of crustal thinning and convection below the poles can amplify south polar stresses by a factor of 10, but it cannot explain the apparent time lag between the maximum plume brightness and the opening of tiger stripes. In a second paper, I will study the impact of a non-uniform crust on tidal dissipation.

Plant-derived cis-β-ocimene as a precursor for biocompatible, transparent, thermally-stable dielectric and encapsulating layers for organic electronics.

PubMed

Bazaka, Kateryna; Destefani, Ryan; Jacob, Mohan V

2016-12-09

This article presents low-temperature, one-step dry synthesis of optically transparent thermally-stable, biocompatible cis-β-ocimene-based thin films for applications as interlayer dielectric and encapsulating layer for flexible electronic devices, e.g. OLEDs. Morphological analysis of thin films shows uniform, very smooth (R q  < 1 nm) and defect-free moderately hydrophilic surfaces. The films are optically transparent, with a refractive index of ~1.58 at 600 nm, an optical band gap of ~2.85 eV, and dielectric constant of 3.5-3.6 at 1 kHz. Upon heating, thin films are chemically and optically stable up to at least 200 °C, where thermal stability increases for films manufactured at higher RF power as well as for films deposited away from the plasma glow. Heating of the sample increases the dielectric constant, from 3.7 (25 °C) to 4.7 (120 °C) at 1 kHz for polymer fabricated at 25 W. Polymers are biocompatible with non-adherent THP-1 cells and adherent mouse macrophage cells, including LPS-stimulated macrophages, and maintain their material properties after 48 h of immersion into simulated body fluid. The versatile nature of the films fabricated in this study may be exploited in next-generation consumer electronics and energy technologies.

Plant-derived cis-β-ocimene as a precursor for biocompatible, transparent, thermally-stable dielectric and encapsulating layers for organic electronics

PubMed Central

Bazaka, Kateryna; Destefani, Ryan; Jacob, Mohan V.

2016-01-01

This article presents low-temperature, one-step dry synthesis of optically transparent thermally-stable, biocompatible cis−β−ocimene-based thin films for applications as interlayer dielectric and encapsulating layer for flexible electronic devices, e.g. OLEDs. Morphological analysis of thin films shows uniform, very smooth (Rq < 1 nm) and defect-free moderately hydrophilic surfaces. The films are optically transparent, with a refractive index of ~1.58 at 600 nm, an optical band gap of ~2.85 eV, and dielectric constant of 3.5−3.6 at 1 kHz. Upon heating, thin films are chemically and optically stable up to at least 200 °C, where thermal stability increases for films manufactured at higher RF power as well as for films deposited away from the plasma glow. Heating of the sample increases the dielectric constant, from 3.7 (25 °C) to 4.7 (120 °C) at 1 kHz for polymer fabricated at 25 W. Polymers are biocompatible with non-adherent THP–1 cells and adherent mouse macrophage cells, including LPS-stimulated macrophages, and maintain their material properties after 48 h of immersion into simulated body fluid. The versatile nature of the films fabricated in this study may be exploited in next-generation consumer electronics and energy technologies. PMID:27934916

Plant-derived cis-β-ocimene as a precursor for biocompatible, transparent, thermally-stable dielectric and encapsulating layers for organic electronics

NASA Astrophysics Data System (ADS)

Bazaka, Kateryna; Destefani, Ryan; Jacob, Mohan V.

2016-12-01

This article presents low-temperature, one-step dry synthesis of optically transparent thermally-stable, biocompatible cis-β-ocimene-based thin films for applications as interlayer dielectric and encapsulating layer for flexible electronic devices, e.g. OLEDs. Morphological analysis of thin films shows uniform, very smooth (Rq < 1 nm) and defect-free moderately hydrophilic surfaces. The films are optically transparent, with a refractive index of ~1.58 at 600 nm, an optical band gap of ~2.85 eV, and dielectric constant of 3.5-3.6 at 1 kHz. Upon heating, thin films are chemically and optically stable up to at least 200 °C, where thermal stability increases for films manufactured at higher RF power as well as for films deposited away from the plasma glow. Heating of the sample increases the dielectric constant, from 3.7 (25 °C) to 4.7 (120 °C) at 1 kHz for polymer fabricated at 25 W. Polymers are biocompatible with non-adherent THP-1 cells and adherent mouse macrophage cells, including LPS-stimulated macrophages, and maintain their material properties after 48 h of immersion into simulated body fluid. The versatile nature of the films fabricated in this study may be exploited in next-generation consumer electronics and energy technologies.

Laser Imprint Suppression for Spike Pulseshapes using a Thin High-Z Overcoat

NASA Astrophysics Data System (ADS)

Karasik, Max; Aglitskiy, Y.; Oh, J.; Weaver, J. L.; Bates, J. W.; Serlin, V.; Obenschain, S. P.

2013-10-01

In directly driven ICF, most of the laser imprint is expected to occur during the initial part of the laser pulse, which generates the first shocks necessary to compress the target to achieve high gain. Previous experiments where the laser pulse had a low intensity foot to generate the first shock found that a thin (< 1000 Å) high-Z overcoat is effective in suppressing imprint [PoP 9, 2234 (2002)]. The overcoat initially absorbs the laser and emits soft x-rays that ablate the target, allowing a large stand-off distance between laser absorption and ablation and giving higher ablation velocity. The coating is thin so that it becomes transparent to the main part of the pulse, minimizing x-ray preheat. The present experiments aim to extend this method to spike pulseshapes used in current target designs, with a view to direct drive on the NIF. Measurements of RT-amplified areal mass non-uniformity on planar targets driven by ISI-smoothed Nike KrF laser are made by curved crystal x-ray radiography. X-ray flux from the high-Z layer is monitored using absolutely calibrated time-resolved x-ray spectrometers. Simultaneous side-on radiography allows observation of the layer dynamics as well as target trajectory. The effect on imprint as well as pre-imposed ripple growth will be presented. Work supported by DOE/NNSA.

Structural and dielectric properties of thin ZrO2 films on silicon grown by atomic layer deposition from cyclopentadienyl precursor

NASA Astrophysics Data System (ADS)

Niinistö, J.; Putkonen, M.; Niinistö, L.; Kukli, K.; Ritala, M.; Leskelä, M.

2004-01-01

ZrO2 thin films with thicknesses below 20 nm were deposited by the atomic layer deposition process on Si(100) substrates at 350 °C. An organometallic precursor, Cp2Zr(CH3)2 (Cp=cyclopentadienyl, C5H5) was used as the zirconium source and water or ozone as oxygen source. The influence of oxygen source and substrate pretreatment on the dielectric properties of ZrO2 films was investigated. Structural characterization with high-resolution transmission electron microscopy was performed to films grown onto HF-etched or native oxide covered silicon. Strong inhibition of ZrO2 film growth was observed with the water process on HF-etched Si. Ozone process on HF-etched Si resulted in interfacial SiO2 formation between the dense and uniform film and the substrate while water process produced interfacial layer with intermixing of SiO2 and ZrO2. The effective permittivity of ZrO2 in Al/ZrO2/Si/Al capacitor structures was dependent on the ZrO2 layer thickness and oxygen source used. The interfacial layer formation increased the capacitance equivalent oxide thickness (CET). CET of 2.0 nm was achieved with 5.9 nm ZrO2 film deposited with the H2O process on HF-stripped Si. The ozone-processed films showed good dielectric properties such as low hysteresis and nearly ideal flatband voltage. The leakage current density was lower and breakdown field higher for the ozone-processed ZrO2 films.

Ultra-thin carbon-fiber paper fabrication and carbon-fiber distribution homogeneity evaluation method

NASA Astrophysics Data System (ADS)

Zhang, L. F.; Chen, D. Y.; Wang, Q.; Li, H.; Zhao, Z. G.

2018-01-01

A preparation technology of ultra-thin Carbon-fiber paper is reported. Carbon fiber distribution homogeneity has a great influence on the properties of ultra-thin Carbon-fiber paper. In this paper, a self-developed homogeneity analysis system is introduced to assist users to evaluate the distribution homogeneity of Carbon fiber among two or more two-value images of carbon-fiber paper. A relative-uniformity factor W/H is introduced. The experimental results show that the smaller the W/H factor, the higher uniformity of the distribution of Carbon fiber is. The new uniformity-evaluation method provides a practical and reliable tool for analyzing homogeneity of materials.

Unidirectional magnetoresistance in magnetic thin films with non-uniform thickness

NASA Astrophysics Data System (ADS)

Jia, M. W.; Zhou, C.; Zeng, F. L.; Wu, Y. Z.

2018-05-01

The magnetoresistance (MR) of Co film and Co/Pt bilayers was studied systematically as a function of Co and Pt thickness at room temperature. In the samples with the wedge shape, we found the unidirectional MR which has the characteristics of R (Mz )≠R (-Mz ) with the magnetization normal to the film. The measured unidirectional MR is attributed to the differential anomalous Hall resistance due to the thickness difference at the electrodes for the longitudinal resistance measurements. The unidirectional MR effect in the Co/Pt bilayers can be greatly suppressed by a non-magnetic Cu inserting layer.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2001-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

Low stress polysilicon film and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin film may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films.

In-situ vacuum deposition technique of lithium on neutron production target for BNCT

NASA Astrophysics Data System (ADS)

Ishiyama, S.; Baba, Y.; Fujii, R.; Nakamura, M.; Imahori, Y.

2012-10-01

For the purpose of avoiding the radiation blistering of the lithium target for neutron production in BNCT (Boron Neutron Capture Therapy) device, trilaminar Li target, of which palladium thin layer was inserted between cupper substrate and Li layer, was newly designed. In-situ vacuum deposition and electrolytic coating techniques were applied to validate the method of fabrication of the Li/Pd/Cu target, and the layered structures of the synthesized target were characterized. In-situ vacuum re-deposition technique was also established for repairing and maintenance for lithium target damaged. Following conclusions were derived; (1) Uniform lithium layers with the thickness from 1.6 nm to a few hundreds nanometer were formed on Pd/Cu multilayer surface by in situ vacuum deposition technique using metallic lithium as a source material. (2) Re-deposition of lithium layer on Li surface can be achieved by in situ vacuum deposition technique. (3) Small amount of water and carbonate was observed on the top surface of Li. But the thickness of the adsorbed layer was less than monolayer, which will not affect the quality of the Li target. (4) The formation of Pd-Li alloy layer was observed at the Pd and Li interface. The alloy layer would contribute to the stability of the Li layer.

Patch testing with thin-layer chromatograms of chamomile tea in patients allergic to sesquiterpene lactones.

PubMed

Lundh, Kerstin; Gruvberger, Birgitta; Möller, Halvor; Persson, Lena; Hindsén, Monica; Zimerson, Erik; Svensson, Ake; Bruze, Magnus

2007-10-01

Patients with contact allergy to sesquiterpene lactones (SLs) are usually hypersensitive to Asteraceae plant products such as herbal teas. The objective of this study was to show sensitizers in chamomile tea by patch testing with thin-layer chromatograms. Tea made from German chamomile was separated by thin-layer chromatography. Strips of the thin-layer chromatograms were used for patch testing SL-positive patients. 15 (43%) of 35 patients tested positively to 1 or more spots on the thin-layer chromatogram, with many individual reaction patterns. Patch testing with thin-layer chromatograms of German chamomile tea showed the presence of several allergens.

Seismic receiver function interpretation: Ps splitting or anisotropic underplating?

NASA Astrophysics Data System (ADS)

Liu, Z.; Park, J. J.

2016-12-01

Crustal anisotropy is crucial to understanding the evolutionary history of Earth's lithosphere. Shear-wave splitting of Moho P-to-s converted phases in receiver functions has often been used to infer crustal anisotropy. In addition to estimating birefringence directly, the harmonic variations of Moho Ps phases in delay times can be used to infer splitting parameters of averaged anisotropy in the crust. However, crustal anisotropy may localize at various levels within the crust due to complex deformational processes. Layered anisotropy requires careful investigation of the distribution of anisotropy before interpreting Moho Ps splitting. In this study, we show results from stations ARU in Russia, KIP in Hawaiian Islands and LSA in Tibetan Plateau, where layered anisotropy is well constrained by intra-crust Ps conversions at high frequencies using harmonic decomposition of multiple-taper correlation receiver functions. Anisotropic velocity models are inferred by forward-modeling decomposed RF waveforms. Our results of ARU and KIP show that the harmonic behavior of Moho Ps phases can be explained by a uniformly anisotropic crust model at lower cut-off frequencies, but higher-resolution RF-signals reveal a thin, highly anisotropic layer at the base of the crust. Station LSA tells a similar story with a twist: a modest Ps birefringence is revealed at high frequencies to stem from multiple thin (5-10-km) layers of localized anisotropy within the middle crust, but no strongly-sheared basal layer is inferred. We suggest that the harmonic variation of Moho Ps phases should always be investigated as a result of anisotropic layering using RFs with frequency content above 1Hz, rather than simply reporting averaged anisotropy of the whole crust.

Plasma nitriding induced growth of Pt-nanowire arrays as high performance electrocatalysts for fuel cells

NASA Astrophysics Data System (ADS)

Du, Shangfeng; Lin, Kaijie; Malladi, Sairam K.; Lu, Yaxiang; Sun, Shuhui; Xu, Qiang; Steinberger-Wilckens, Robert; Dong, Hanshan

2014-09-01

In this work, we demonstrate an innovative approach, combing a novel active screen plasma (ASP) technique with green chemical synthesis, for a direct fabrication of uniform Pt nanowire arrays on large-area supports. The ASP treatment enables in-situ N-doping and surface modification to the support surface, significantly promoting the uniform growth of tiny Pt nuclei which directs the growth of ultrathin single-crystal Pt nanowire (2.5-3 nm in diameter) arrays, forming a three-dimensional (3D) nano-architecture. Pt nanowire arrays in-situ grown on the large-area gas diffusion layer (GDL) (5 cm2) can be directly used as the catalyst electrode in fuel cells. The unique design brings in an extremely thin electrocatalyst layer, facilitating the charge transfer and mass transfer properties, leading to over two times higher power density than the conventional Pt nanoparticle catalyst electrode in real fuel cell environment. Due to the similar challenges faced with other nanostructures and the high availability of ASP for other material surfaces, this work will provide valuable insights and guidance towards the development of other new nano-architectures for various practical applications.

Uniform deposition of uranium hexafluoride (UF6): Standardized mass deposits and controlled isotopic ratios using a thermal fluorination method

DOE Office of Scientific and Technical Information (OSTI.GOV)

McNamara, Bruce K.; O’Hara, Matthew J.; Casella, Andrew M.

2016-07-01

Abstract: We report a convenient method for the generation of volatile uranium hexafluoride (UF6) from solid uranium oxides and other uranium compounds, followed by uniform deposition of low levels of UF6 onto sampling coupons. Under laminar flow conditions, UF6 is shown to interact with surfaces within the chamber to a highly predictable degree. We demonstrate the preparation of uranium deposits that range between ~0.01 and 470±34 ng∙cm-2. The data suggest the method can be extended to creating depositions at the sub-picogram∙cm-2 level. Additionally, the isotopic composition of the deposits can be customized by selection of the uranium source materials. Wemore » demonstrate a layering technique whereby two uranium solids, each with a different isotopic composition, are employed to form successive layers of UF6 on a surface. The result is an ultra-thin deposit of UF6 that bears an isotopic signature that is a composite of the two uranium sources. The reported deposition method has direct application to the development of unique analytical standards for nuclear safeguards and forensics.« less

Trimethylamine alane for low-pressure MOVPE growth of AlGaAs-based materials and device structures

NASA Astrophysics Data System (ADS)

Schneider, R. P.; Bryan, R. P.; Jones, E. D.; Biefield, R. M.; Olbright, G. R.

The use of trimethylamine alane (TMAA1) as an alternative to trimethylaluminum (TMA1) for low-pressure metalorganic vapor-phase epitaxy (MOVPE) of AlGaAs thin films as well as complex optoelectronic device structures has been studied in detail. AlGaAs layers were grown in a horizontal reaction chamber at 20 - 110 mbar with growth temperatures in the range 650 C less than or equal to T(sub G) less than or equal to 750 C. Wafer thickness uniformity is strongly dependent on growth pressure, and is acceptable only for the highest linear flow velocities. The 12 K photoluminescence (PL) spectra of AlGaAs layers grown using TMAA1 and TEGa exhibit uniformly intense and narrow bound-exciton emission throughout the growth temperature range investigated. To assess the viability of this new source for the low-pressure OMVPE growth of advanced optoelectronic devices, several optically-pumped vertical-cavity surface-emitting laser (VCSEL) structures were grown using TMAA1 extensively. Room temperature lasing at 850 nm was reproducibly obtained from the VCSEL structures, with a threshold pumping power comparable to similar structures grown by molecular beam epitaxy in our laboratories.

Source Distribution Method for Unsteady One-Dimensional Flows With Small Mass, Momentum, and Heat Addition and Small Area Variation

NASA Technical Reports Server (NTRS)

Mirels, Harold

1959-01-01

A source distribution method is presented for obtaining flow perturbations due to small unsteady area variations, mass, momentum, and heat additions in a basic uniform (or piecewise uniform) one-dimensional flow. First, the perturbations due to an elemental area variation, mass, momentum, and heat addition are found. The general solution is then represented by a spatial and temporal distribution of these elemental (source) solutions. Emphasis is placed on discussing the physical nature of the flow phenomena. The method is illustrated by several examples. These include the determination of perturbations in basic flows consisting of (1) a shock propagating through a nonuniform tube, (2) a constant-velocity piston driving a shock, (3) ideal shock-tube flows, and (4) deflagrations initiated at a closed end. The method is particularly applicable for finding the perturbations due to relatively thin wall boundary layers.

Low-Dimensional Nanomaterials as Active Layer Components in Thin-Film Photovoltaics

NASA Astrophysics Data System (ADS)

Shastry, Tejas Attreya

Thin-film photovoltaics offer the promise of cost-effective and scalable solar energy conversion, particularly for applications of semi-transparent solar cells where the poor absorption of commercially-available silicon is inadequate. Applications ranging from roof coatings that capture solar energy to semi-transparent windows that harvest the immense amount of incident sunlight on buildings could be realized with efficient and stable thin-film solar cells. However, the lifetime and efficiency of thin-film solar cells continue to trail their inorganic silicon counterparts. Low-dimensional nanomaterials, such as carbon nanotubes and two-dimensional metal dichalcogenides, have recently been explored as materials in thin-film solar cells due to their exceptional optoelectronic properties, solution-processability, and chemical inertness. Thus far, issues with the processing of these materials has held back their implementation in efficient photovoltaics. This dissertation reports processing advances that enable demonstrations of low-dimensional nanomaterials in thin-film solar cells. These low-dimensional photovoltaics show enhanced photovoltaic efficiency and environmental stability in comparison to previous devices, with a focus on semiconducting single-walled carbon nanotubes as an active layer component. The introduction summarizes recent advances in the processing of carbon nanotubes and their implementation through the thin-film photovoltaic architecture, as well as the use of two-dimensional metal dichalcogenides in photovoltaic applications and potential future directions for all-nanomaterial solar cells. The following chapter reports a study of the interaction between carbon nanotubes and surfactants that enables them to be sorted by electronic type via density gradient ultracentrifugation. These insights are utilized to construct of a broad distribution of carbon nanotubes that absorb throughout the solar spectrum. This polychiral distribution is then shown to result in record breaking performance in a carbon nanotube solar cell, and subsequent chapters study the mechanisms behind charge transfer in the polychiral carbon nanotube / fullerene solar cell. Further processing advances, chiral distribution tailoring, and solvent additives are shown to enable more uniform and larger area carbon nanotube solar cells while maintaining record-breaking performance. In order to increase overall photovoltaic performance of a carbon nanotube active layer solar cell, this dissertation also demonstrates a ternary polymer-carbon nanotube-small molecule photovoltaic with high efficiency and stability enabled by the nanomaterial. Finally, the use of the two-dimensional metal dichalcogenide molybdenum disulfide as a photovoltaic material is explored in an ultrathin solar cell with higher efficiency per thickness than leading organic and inorganic thin-film photovoltaics. Overall, this work demonstrates breakthroughs in utilizing low-dimensional nanomaterials as active layer components in photovoltaics and will inform ongoing research in making ultrathin, stable, efficient solar cells.

Enhanced Performance Consistency in Nanoparticle/TIPS Pentacene-Based Organic Thin Film Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Zhengran; Xiao, Kai; Durant, William Mark

2011-01-01

In this study, inorganic silica nanoparticles are used to manipulate the morphology of 6,13-bis(triisopropylsilylethynyl)-pentacene (TIPS pentacene) thin films and the performance of solution-processed organic thin-film transistors (OTFTs). This approach is taken to control crystal anisotropy, which is the origin of poor consistency in TIPS pentacene based OTFT devices. Thin film active layers are produced by drop-casting mixtures of SiO{sub 2} nanoparticles and TIPS pentacene. The resultant drop-cast films yield improved morphological uniformity at {approx}10% SiO{sub 2} loading, which also leads to a 3-fold increase in average mobility and nearly 4 times reduction in the ratio of measured mobility standard deviationmore » ({mu}{sub Stdev}) to average mobility ({mu}{sub Avg}). Grazing-incidence X-ray diffraction, scanning and transmission electron microscopy as well as polarized optical microscopy are used to investigate the nanoparticle-mediated TIPS pentacene crystallization. The experimental results suggest that the SiO{sub 2} nanoparticles mostly aggregate at TIPS pentacene grain boundaries, and 10% nanoparticle concentration effectively reduces the undesirable crystal misorientation without considerably compromising TIPS pentacene crystallinity.« less

One Step Assembly of Thin Films of Carbon Nanotubes on Screen Printed Interface for Electrochemical Aptasensing of Breast Cancer Biomarker.

PubMed

Nawaz, Muhammad Azhar Hayat; Rauf, Sajid; Catanante, Gaelle; Nawaz, Mian Hasnain; Nunes, Gilvanda; Marty, Jean Louis; Hayat, Akhtar

2016-10-06

Thin films of organic moiety functionalized carbon nanotubes (CNTs) from a very well-dispersed aqueous solution were designed on a screen printed transducer surface through a single step directed assembly methodology. Very high density of CNTs was obtained on the screen printed electrode surface, with the formation of a thin and uniform layer on transducer substrate. Functionalized CNTs were characterized by X-ray diffraction spectroscopy (XRD), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA) and Brunauer-Emmett- Teller (BET) surface area analyzer methodologies, while CNT coated screen printed transducer platform was analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The proposed methodology makes use of a minimum amount of CNTs and toxic solvents, and is successfully demonstrated to form thin films over macroscopic areas of screen printed carbon transducer surface. The CNT coated screen printed transducer surface was integrated in the fabrication of electrochemical aptasensors for breast cancer biomarker analysis. This CNT coated platform can be applied to immobilize enzymes, antibodies and DNA in the construction of biosensor for a broad spectrum of applications.

One Step Assembly of Thin Films of Carbon Nanotubes on Screen Printed Interface for Electrochemical Aptasensing of Breast Cancer Biomarker

PubMed Central

Nawaz, Muhammad Azhar Hayat; Rauf, Sajid; Catanante, Gaelle; Nawaz, Mian Hasnain; Nunes, Gilvanda; Louis Marty, Jean; Hayat, Akhtar

2016-01-01

Thin films of organic moiety functionalized carbon nanotubes (CNTs) from a very well-dispersed aqueous solution were designed on a screen printed transducer surface through a single step directed assembly methodology. Very high density of CNTs was obtained on the screen printed electrode surface, with the formation of a thin and uniform layer on transducer substrate. Functionalized CNTs were characterized by X-ray diffraction spectroscopy (XRD), Fourier transform infrared spectroscopy (FTIR), thermogravimetric analysis (TGA) and Brunauer–Emmett–Teller (BET) surface area analyzer methodologies, while CNT coated screen printed transducer platform was analyzed by scanning electron microscopy (SEM), atomic force microscopy (AFM), cyclic voltammetry (CV) and electrochemical impedance spectroscopy (EIS). The proposed methodology makes use of a minimum amount of CNTs and toxic solvents, and is successfully demonstrated to form thin films over macroscopic areas of screen printed carbon transducer surface. The CNT coated screen printed transducer surface was integrated in the fabrication of electrochemical aptasensors for breast cancer biomarker analysis. This CNT coated platform can be applied to immobilize enzymes, antibodies and DNA in the construction of biosensor for a broad spectrum of applications. PMID:27782067

Interface Engineering with MoS2 -Pd Nanoparticles Hybrid Structure for a Low Voltage Resistive Switching Memory.

PubMed

Wang, Xue-Feng; Tian, He; Zhao, Hai-Ming; Zhang, Tian-Yu; Mao, Wei-Quan; Qiao, Yan-Cong; Pang, Yu; Li, Yu-Xing; Yang, Yi; Ren, Tian-Ling

2018-01-01

Metal oxide-based resistive random access memory (RRAM) has attracted a lot of attention for its scalability, temperature robustness, and potential to achieve machine learning. However, a thick oxide layer results in relatively high program voltage while a thin one causes large leakage current and a small window. Owing to these fundamental limitations, by optimizing the oxide layer itself a novel interface engineering idea is proposed to reduce the programming voltage, increase the uniformity and on/off ratio. According to this idea, a molybdenum disulfide (MoS 2 )-palladium nanoparticles hybrid structure is used to engineer the oxide/electrode interface of hafnium oxide (HfO x )-based RRAM. Through its interface engineering, the set voltage can be greatly lowered (from -3.5 to -0.8 V) with better uniformity under a relatively thick HfO x layer (≈15 nm), and a 30 times improvement of the memory window can be obtained. Moreover, due to the atomic thickness of MoS 2 film and high transmittance of ITO, the proposed RRAM exhibits high transparency in visible light. As the proposed interface-engineering RRAM exhibits good transparency, low SET voltage, and a large resistive switching window, it has huge potential in data storage in transparent circuits and wearable electronics with relatively low supply voltage. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Atomic Layer Deposition of Gallium Oxide Films as Gate Dielectrics in AlGaN/GaN Metal-Oxide-Semiconductor High-Electron-Mobility Transistors

NASA Astrophysics Data System (ADS)

Shih, Huan-Yu; Chu, Fu-Chuan; Das, Atanu; Lee, Chia-Yu; Chen, Ming-Jang; Lin, Ray-Ming

2016-04-01

In this study, films of gallium oxide (Ga2O3) were prepared through remote plasma atomic layer deposition (RP-ALD) using triethylgallium and oxygen plasma. The chemical composition and optical properties of the Ga2O3 thin films were investigated; the saturation growth displayed a linear dependence with respect to the number of ALD cycles. These uniform ALD films exhibited excellent uniformity and smooth Ga2O3-GaN interfaces. An ALD Ga2O3 film was then used as the gate dielectric and surface passivation layer in a metal-oxide-semiconductor high-electron-mobility transistor (MOS-HEMT), which exhibited device performance superior to that of a corresponding conventional Schottky gate HEMT. Under similar bias conditions, the gate leakage currents of the MOS-HEMT were two orders of magnitude lower than those of the conventional HEMT, with the power-added efficiency enhanced by up to 9 %. The subthreshold swing and effective interfacial state density of the MOS-HEMT were 78 mV decade-1 and 3.62 × 1011 eV-1 cm-2, respectively. The direct-current and radio-frequency performances of the MOS-HEMT device were greater than those of the conventional HEMT. In addition, the flicker noise of the MOS-HEMT was lower than that of the conventional HEMT.

Amorphous silicon Schottky barrier solar cells incorporating a thin insulating layer and a thin doped layer

DOEpatents

Carlson, David E.

1980-01-01

Amorphous silicon Schottky barrier solar cells which incorporate a thin insulating layer and a thin doped layer adjacent to the junction forming metal layer exhibit increased open circuit voltages compared to standard rectifying junction metal devices, i.e., Schottky barrier devices, and rectifying junction metal insulating silicon devices, i.e., MIS devices.

Oxygen Reduction Reaction Measurements on Platinum Electrocatalysts Utilizing Rotating Disk Electrode Technique: II. Influence of Ink Formulation, Catalyst Layer Uniformity and Thickness

DOE PAGES

Shinozaki, Kazuma; Zack, Jason W.; Pylypenko, Svitlana; ...

2015-09-17

Platinum electrocatalysts supported on high surface area and Vulcan carbon blacks (Pt/HSC, Pt/V) were characterized in rotating disk electrode (RDE) setups for electrochemical area (ECA) and oxygen reduction reaction (ORR) area specific activity (SA) and mass specific activity (MA) at 0.9 V. Films fabricated using several ink formulations and film-drying techniques were characterized for a statistically significant number of independent samples. The highest quality Pt/HSC films exhibited MA 870 ± 91 mA/mgPt and SA 864 ± 56 μA/cm 2 Pt while Pt/V had MA 706 ± 42 mA/mgPt and SA 1120 ± 70 μA/cm 2 Pt when measured in 0.1more » M HClO 4, 20 mV/s, 100 kPa O 2 and 23±2°C. An enhancement factor of 2.8 in themeasured SA was observable on eliminating Nafion ionomer and employing extremely thin, uniform films (~4.5 μg/cm 2 Pt) of Pt/HSC. The ECA for Pt/HSC (99 ± 7 m2/gPt) and Pt/V (65 ± 5 m 2/gPt) were statistically invariant and insensitive to film uniformity/thickness/fabrication technique; accordingly, enhancements in MA are wholly attributable to increases in SA. Impedance measurements coupled with scanning electron microscopy were used to de-convolute the losses within the catalyst layer and ascribed to the catalyst layer resistance, oxygen diffusion, and sulfonate anion adsorption/blocking. The ramifications of these results for proton exchange membrane fuel cells have also been examined.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Scheuermann, James R., E-mail: James.Scheuermann@stonybrook.edu; Goldan, Amir H.; Zhao, Wei

Purpose: Active matrix flat panel imagers (AMFPI) have limited performance in low dose applications due to the electronic noise of the thin film transistor (TFT) array. A uniform layer of avalanche amorphous selenium (a-Se) called high gain avalanche rushing photoconductor (HARP) allows for signal amplification prior to readout from the TFT array, largely eliminating the effects of the electronic noise. The authors report preliminary avalanche gain measurements from the first HARP structure developed for direct deposition onto a TFT array. Methods: The HARP structure is fabricated on a glass substrate in the form of p-i-n, i.e., the electron blocking layermore » (p) followed by an intrinsic (i) a-Se layer and finally the hole blocking layer (n). All deposition procedures are scalable to large area detectors. Integrated charge is measured from pulsed optical excitation incident on the top electrode (as would in an indirect AMFPI) under continuous high voltage bias. Avalanche gain measurements were obtained from samples fabricated simultaneously at different locations in the evaporator to evaluate performance uniformity across large area. Results: An avalanche gain of up to 80 was obtained, which showed field dependence consistent with previous measurements from n-i-p HARP structures established for vacuum tubes. Measurements from multiple samples demonstrate the spatial uniformity of performance using large area deposition methods. Finally, the results were highly reproducible during the time course of the entire study. Conclusions: We present promising avalanche gain measurement results from a novel HARP structure that can be deposited onto a TFT array. This is a crucial step toward the practical feasibility of AMFPI with avalanche gain, enabling quantum noise limited performance down to a single x-ray photon per pixel.« less

Oxygen Reduction Reaction Measurements on Platinum Electrocatalysts Utilizing Rotating Disk Electrode Technique: II. Influence of Ink Formulation, Catalyst Layer Uniformity and Thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shinozaki, Kazuma; Zack, Jason W.; Pylypenko, Svitlana

Platinum electrocatalysts supported on high surface area and Vulcan carbon blacks (Pt/HSC, Pt/V) were characterized in rotating disk electrode (RDE) setups for electrochemical area (ECA) and oxygen reduction reaction (ORR) area specific activity (SA) and mass specific activity (MA) at 0.9 V. Films fabricated using several ink formulations and film-drying techniques were characterized for a statistically significant number of independent samples. The highest quality Pt/HSC films exhibited MA 870 ± 91 mA/mgPt and SA 864 ± 56 μA/cm 2 Pt while Pt/V had MA 706 ± 42 mA/mgPt and SA 1120 ± 70 μA/cm 2 Pt when measured in 0.1more » M HClO 4, 20 mV/s, 100 kPa O 2 and 23±2°C. An enhancement factor of 2.8 in themeasured SA was observable on eliminating Nafion ionomer and employing extremely thin, uniform films (~4.5 μg/cm 2 Pt) of Pt/HSC. The ECA for Pt/HSC (99 ± 7 m2/gPt) and Pt/V (65 ± 5 m 2/gPt) were statistically invariant and insensitive to film uniformity/thickness/fabrication technique; accordingly, enhancements in MA are wholly attributable to increases in SA. Impedance measurements coupled with scanning electron microscopy were used to de-convolute the losses within the catalyst layer and ascribed to the catalyst layer resistance, oxygen diffusion, and sulfonate anion adsorption/blocking. The ramifications of these results for proton exchange membrane fuel cells have also been examined.« less

Bi-functional anodic TiO2 oxide: Nanotubes for wettability control and barrier oxide for uniform coloring

NASA Astrophysics Data System (ADS)

Kim, Sunkyu; Jung, Minkyeong; Kim, Moonsu; Choi, Jinsub

2017-06-01

A uniformly colored TiO2, on which the surface is functionalized with nanotubes to control wettability, was prepared by a two-step anodization; the first anodization was carried out to prepare nanotubes for a super-hydrophilic or -hydrophobic surface and the second anodization was performed to fabricate a thin film barrier oxide to ensure uniform coloring. The effect of the nanotubes on barrier oxide coloring was examined by spectrophotometry and UV-vis-IR spectroscopy. We found four different regimes governing the color changes in terms of anodization voltage, indicating that the color of the duplex TiO2 was primarily determined by the thickness of the barrier oxide layer formed during the second anodization step. The surface wettability, as confirmed by the water contact angle, revealed that the single barrier TiO2 yielded 74.6° ± 2.1, whereas the nanotubes on the barrier oxide imparted super-hydrophilic properties as a result of increasing surface roughness as well as imparting a higher hydrophobicity after organic acid treatment.

STM studies of GeSi thin layers epitaxially grown on Si(111)

NASA Astrophysics Data System (ADS)

Motta, N.; Sgarlata, A.; De Crescenzi, M.; Derrien, J.

1996-08-01

Ge/Si alloys were prepared in UHV by solid phase epitaxy on Si(111) substrates. The alloy formation, as a function of the evaporation rate and the Ge layer thickness has been followed in situ by RHEED and scanning tunneling microscopy. The 5 × 5 surface reconstruction appeared after annealing at 450°C Ge layers (up to 10 Å thick), obtained from a low rate Knudsen cell evaporator. In this case a nearly flat and uniform layer of reconstructed alloy was observed. When using an e-gun high rate evaporator we needed to anneal the Ge layer up to 780°C to obtain a 5 × 5 reconstruction. The grown layer was not flat, with many steps and Ge clusters; at high coverages (10 Å and more) large Ge islands appeared. Moreover, we then succeeded in visualizing at atomic resolution the top of some of these Ge islands which displayed a 2 × 1 reconstruction, probably induced from the high compressive strain due to the lattice mismatch with the substrate. We suggest that this unusual behavior could be connected to the high evaporation rate, which helped the direct formation of Ge microcrystals on the Si substrate during the deposition process.

One-stage pulsed laser deposition of conductive zinc oxysulfide layers

NASA Astrophysics Data System (ADS)

Bereznev, Sergei; Kocharyan, Hrachya; Maticiuc, Natalia; Naidu, Revathi; Volobujeva, Olga; Tverjanovich, Andrey; Kois, Julia

2017-12-01

Zinc oxysulfide - Zn(O,S) is one of the prospective materials for substitution of conventional CdS buffer layer in complete optoelectronic devices due to its optimal bandgap and low toxicity. In this work Zn(O,S) thin films have been prepared by one-step pulsed laser deposition technique. The films with a thickness of 650 nm were deposited onto the FTO/glass substrates at different substrate temperatures from room temperature to 400 °C. Zn(O,S) layers were characterized by means of scanning electron microscopy, energy dispersive spectroscopy, Raman, X-ray diffraction, UV-vis spectroscopy and Van der Pauw technique. It was found, that obtained Zn(O,S) layers are mainly polycrystalline, highly uniform, transparent, electrically conductive and demonstrate good adhesion to the FTO/glass substrates. In addition, we show that elemental composition of PLD Zn(O,S) films depends on the substrate temperature. For the first time high quality single phase conductive Zn(O,S) layers were prepared by one stage PLD in high vacuum at relatively low temperature 200 °C without any post treatment. The properties of prepared Zn(O,S) films suggest that these films can be applied as buffer layer in optoelectronic devices.

Surface engineering of zirconium particles by molecular layer deposition: Significantly enhanced electrostatic safety at minimum loss of the energy density

NASA Astrophysics Data System (ADS)

Qin, Lijun; Yan, Ning; Hao, Haixia; An, Ting; Zhao, Fengqi; Feng, Hao

2018-04-01

Because of its high volumetric heat of oxidation, Zr powder is a promising high energy fuel/additive for rocket propellants. However, the application of Zr powder is restricted by its ultra-high electrostatic discharge sensitivity, which poses great hazards for handling, transportation and utilization of this material. By performing molecular layer deposition of polyimide using 1,2,4,5-benzenetetracarboxylic anhydride and ethylenediamine as the precursors, Zr particles can be uniformly encapsulated by thin layers of the polymer. The thicknesses of the encapsulation layers can be precisely controlled by adjusting the number of deposition cycle. High temperature annealing converts the polymer layer into a carbon coating. Results of thermal analyses reveal that the polymer or carbon coatings have little negative effect on the energy release process of the Zr powder. By varying the thickness of the polyimide or carbon coating, electrostatic discharge sensitivity of the Zr powder can be tuned in a wide range and its uncontrolled ignition hazard can be virtually eliminated. This research demonstrates the great potential of molecular layer deposition in effectively modifying the surface properties of highly reactive metal based energetic materials with minimum sacrifices of their energy densities.

Effects of channel thickness on oxide thin film transistor with double-stacked channel layer

NASA Astrophysics Data System (ADS)

Lee, Kimoon; Kim, Yong-Hoon; Yoon, Sung-Min; Kim, Jiwan; Oh, Min Suk

2017-11-01

To improve the field effect mobility and control the threshold voltage ( V th ) of oxide thin film transistors (TFTs), we fabricated the oxide TFTs with double-stacked channel layers which consist of thick Zn-Sn-O (ZTO) and very thin In-Zn-O (IZO) layers. We investigated the effects of the thickness of thin conductive layer and the conductivity of thick layer on oxide TFTs with doublestacked channel layer. When we changed the thickness of thin conductive IZO channel layer, the resistivity values were changed. This resistivity of thin channel layer affected on the saturation field effect mobility and the off current of TFTs. In case of the thick ZTO channel layer which was deposited by sputtering in Ar: O2 = 10: 1, the device showed better performances than that which was deposited in Ar: O2 = 1: 1. Our TFTs showed high mobility ( μ FE ) of 40.7 cm2/Vs and V th of 4.3 V. We assumed that high mobility and the controlled V th were caused by thin conductive IZO layer and thick stable ZTO layer. Therefore, this double-stacked channel structure can be very promising way to improve the electrical characteristics of various oxide thin film transistors.

Direct Numerical Simulation of Wetting and Spreading Behavior on Heterogeneous and Roughened Substrates

NASA Technical Reports Server (NTRS)

Schwartz, Leonard W.

1999-01-01

A method of calculation is presented that allows the simulation of the time-dependent three-dimensional motion of thin liquid layers on solid substrates for systems with finite equilibrium contact angles. The contact angle is a prescribed function of position on the substrate. Similar mathematical models are constructed for substrates with a pattern of roughness. Evolution equations are given, using the lubrication approximation, that include viscous, capillary and disjoining forces. Motion to and from dry substrate regions is made possible by use of a thin energetically-stable wetting layer. We simulate motion on heterogeneous substrates with periodic arrays of high contact-angle patches. Two different problems are treated for heterogenous substrates. The first is spontaneous motion driven only by wetting forces. If the contact-angle difference is sufficiently high, the droplet can find several different stable positions, depending on the previous history of the motion. A second simulation treats a forced cyclical motion. Energy dissipation per cycle for a heterogeneous substrate is found to be larger than for a uniform substrate with the same total energy. The Landau-Levich solution for plate removal from a liquid bath is extended to account for a pattern of roughness on the plate.

Periodic oxidation for fabricating titanium oxynitride thin films via atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwashita, Shinya, E-mail: shinya.iwashita@tel.com; Aoyama, Shintaro; Nasu, Masayuki

2016-01-15

This paper demonstrates thermal atomic layer deposition (ALD) combined with periodic oxidation for synthesizing titanium oxynitride (TiON) thin films. The process used a typical ALD reactor for the synthesis of titanium nitride (TiN) films wherein oxygen was supplied periodically between the ALD-TiN cycles. The great advantage of the process proposed here was that it allowed the TiN films to be oxidized efficiently. Also, a uniform depth profile of the oxygen concentration in the films could be obtained by tuning the oxidation conditions, allowing the process to produce a wide variety of TiON films. The resistivity measurement is a convenient methodmore » to confirm the reproducibility of metal film fabrication but may not be applicable for TiON films depending upon the oxidation condition because the films can easily turn into insulators when subjected to periodic oxidation. Therefore, an alternative reproducibility confirmation method was required. In this study, spectroscopic ellipsometry was applied to monitor the variation of TiON films and was able to detect changes in film structures such as conductor–insulator transitions in the TiON films.« less

Patterning Method for Silver Nanoparticle Electrodes in Fully Solution-Processed Organic Thin-Film Transistors Using Selectively Treated Hydrophilic and Hydrophobic Surfaces

NASA Astrophysics Data System (ADS)

Fukuda, Kenjiro; Takeda, Yasunori; Kobayashi, Yu; Shimizu, Masahiro; Sekine, Tomohito; Kumaki, Daisuke; Kurihara, Masato; Sakamoto, Masatomi; Tokito, Shizuo

2013-05-01

Fully solution-processed organic thin-film transistor (OTFT) devices have been fabricated with simple patterning process at a relatively low process temperature of 100 °C. In the patterning process, a hydrophobic amorphous fluoropolymer material, which was used as the gate dielectric layer and the underlying base layer, was treated with an oxygen plasma to selectively change its surface wetting properties from hydrophobic to hydrophilic. Silver source and drain electrodes were successfully formed in the treated areas with highly uniform line widths and without residues between the electrodes. Nonuniformities in the thickness of the silver electrodes originating from the “coffee-ring” effect were suppressed by optimizing the blend of solvents used with the silver nanoparticles, such that the printed electrodes are appropriate for bottom-gate OTFT devices. A fully solution-processed OTFT device using a polymer semiconductor material (PB16TTT) exhibited good electrical performance with no hysteresis in its transfer characteristics and with good linearity in its output characteristics. A relatively high carrier mobility of 0.14 cm2 V-1 s-1 and an on/off ratio of 1×105 were obtained with the fabricated TFT device.

Performance analysis of resistive switching devices based on BaTiO3 thin films

NASA Astrophysics Data System (ADS)

Samardzic, Natasa; Kojic, Tijana; Vukmirovic, Jelena; Tripkovic, Djordjije; Bajac, Branimir; Srdic, Vladimir; Stojanovic, Goran

2016-03-01

Resitive switching devices, memristors, have recenty attracted much attention due to promising performances and potential applications in the field of logic and memory devices. Here, we present thin film BaTiO3 based memristor fabricated using ink-jet printing technique. Active material is a single layer barium titanate film with thickness of ̴100 nm, sandwitched between metal electodes. Printing parameters were optimized aiming to achieve stable drop flow and uniform printed layer. Current-voltage characteristics show typical memristive behavior with pinched hysteresis loop crossed at the origin, with marked differences between High Resistive State (HRS) and Low Resistive State (LRS). Obtained resistive states are stable during numerous switching processes. The device also shows unipolar switching effect for negative voltage impulses. Variable voltage impulse amplitudes leads to the shifting of the energy levels of electode contacts resulting in changing of the overall current through the device. Structural charcterization have been performed using XRD analysis and SEM micrography. High-temperature current-voltage measurements combined with transport parameter analysis using Hall efect measurement system (HMS 3000) and Impedance Analyzer AC measurements allows deeper insigth into conduction mechanism of ferroelectric memristors.

Influence of high energy electron irradiation on the characteristics of polysilicon thin film transistors

NASA Astrophysics Data System (ADS)

Aleksandrova, P. V.; Gueorguiev, V. K.; Ivanov, Tz. E.; Kaschieva, S.

2006-08-01

The influence of high energy electron (23 MeV) irradiation on the electrical characteristics of p-channel polysilicon thin film transistors (PSTFTs) was studied. The channel 220 nm thick LPCVD (low pressure chemical vapor deposition) deposited polysilicon layer was phosphorus doped by ion implantation. A 45 nm thick, thermally grown, SiO2 layer served as gate dielectric. A self-alignment technology for boron doping of the source and drain regions was used. 200 nm thick polysilicon film was deposited as a gate electrode. The obtained p-channel PSTFTs were irradiated with different high energy electron doses. Leakage currents through the gate oxide and transfer characteristics of the transistors were measured. A software model describing the field enhancement and the non-uniform current distribution at textured polysilicon/oxide interface was developed. In order to assess the irradiation-stimulated changes of gate oxide parameters the gate oxide tunneling conduction and transistor characteristics were studied. At MeV dose of 6×1013 el/cm2, a negligible degradation of the transistor properties was found. A significant deterioration of the electrical properties of PSTFTs at MeV irradiation dose of 3×1014 el/cm2 was observed.

Method for materials deposition by ablation transfer processing

DOEpatents

Weiner, K.H.

1996-04-16

A method in which a thin layer of semiconducting, insulating, or metallic material is transferred by ablation from a source substrate, coated uniformly with a thin layer of said material, to a target substrate, where said material is desired, with a pulsed, high intensity, patternable beam of energy. The use of a patternable beam allows area-selective ablation from the source substrate resulting in additive deposition of the material onto the target substrate which may require a very low percentage of the area to be covered. Since material is placed only where it is required, material waste can be minimized by reusing the source substrate for depositions on multiple target substrates. Due to the use of a pulsed, high intensity energy source the target substrate remains at low temperature during the process, and thus low-temperature, low cost transparent glass or plastic can be used as the target substrate. The method can be carried out atmospheric pressures and at room temperatures, thus eliminating vacuum systems normally required in materials deposition processes. This invention has particular application in the flat panel display industry, as well as minimizing materials waste and associated costs. 1 fig.

Depositing bulk or micro-scale electrodes

DOEpatents

Shah, Kedar G.; Pannu, Satinderpall S.; Tolosa, Vanessa; Tooker, Angela C.; Sheth, Heeral J.; Felix, Sarah H.; Delima, Terri L.

2016-11-01

Thicker electrodes are provided on microelectronic device using thermo-compression bonding. A thin-film electrical conducting layer forms electrical conduits and bulk depositing provides an electrode layer on the thin-film electrical conducting layer. An insulating polymer layer encapsulates the electrically thin-film electrical conducting layer and the electrode layer. Some of the insulating layer is removed to expose the electrode layer.

Thin films of mixed metal compounds

DOEpatents

Mickelsen, R.A.; Chen, W.S.

1985-06-11

Disclosed is a thin film heterojunction solar cell, said heterojunction comprising a p-type I-III-IV[sub 2] chalcopyrite substrate and an overlying layer of an n-type ternary mixed metal compound wherein said ternary mixed metal compound is applied to said substrate by introducing the vapor of a first metal compound to a vessel containing said substrate from a first vapor source while simultaneously introducing a vapor of a second metal compound from a second vapor source of said vessel, said first and second metals comprising the metal components of said mixed metal compound; independently controlling the vaporization rate of said first and second vapor sources; reducing the mean free path between vapor particles in said vessel, said gas being present in an amount sufficient to induce homogeneity of said vapor mixture; and depositing said mixed metal compound on said substrate in the form of a uniform composition polycrystalline mixed metal compound. 5 figs.

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2015-03-01

Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

Method for bonding thin film thermocouples to ceramics

DOEpatents

Kreider, Kenneth G.

1993-01-01

A method is provided for adhering a thin film metal thermocouple to a ceramic substrate used in an environment up to 700 degrees Centigrade, such as at a cylinder of an internal combustion engine. The method includes the steps of: depositing a thin layer of a reactive metal on a clean ceramic substrate; and depositing thin layers of platinum and a platinum-10% rhodium alloy forming the respective legs of the thermocouple on the reactive metal layer. The reactive metal layer serves as a bond coat between the thin noble metal thermocouple layers and the ceramic substrate. The thin layers of noble metal are in the range of 1-4 micrometers thick. Preferably, the ceramic substrate is selected from the group consisting of alumina and partially stabilized zirconia. Preferably, the thin layer of reactive metal is in the range of 0.015-0.030 micrometers (15-30 nanometers) thick. The preferred reactive metal is chromium. Other reactive metals may be titanium or zirconium. The thin layer of reactive metal may be deposited by sputtering in ultra high purity argon in a vacuum of approximately 2 milliTorr (0.3 Pascals).

Optical interference probe of biofilm hydrology: label-free characterization of the dynamic hydration behavior of native biofilms

NASA Astrophysics Data System (ADS)

McDonough, Richard T.; Zheng, Hewen; Alila, Mercy A.; Goodisman, Jerry; Chaiken, Joseph

2017-03-01

Biofilm produced by Escherichia coli (E. coli) or Pseudomonas aeruginosa (P. aeruginosa) on quartz or polystyrene is removed from the culture medium and drained. Observed optical interference fringes indicate the presence of a layer of uniform thickness with refractive index different from air-dried biofilm. Fringe wavelengths indicate that layer optical thickness is <20 μm or 1 to 2 orders of magnitude thinner than the biofilm as measured by confocal Raman microscopy or fluorescence imaging of the bacteria. Raman shows that films have an alginate-like carbohydrate composition. Fringe amplitudes indicate that the refractive index of the interfering layer is higher than dry alginate. Drying and rehydration nondestructively thins and restores the interfering layer. The strength of the 1451-nm near infrared water absorption varies in unison with thickness. Absorption and layer thickness are proportional for films with different bacteria, substrates, and growth conditions. Formation of the interfering layer is general, possibly depending more on the chemical nature of alginate-like materials than bacterial processes. Films grown during the exponential growth phase produce no observable interference fringes, indicating requirements for layer formation are not met, possibly reflecting bacterial activities at that stage. The interfering layer might provide a protective environment for bacteria when water is scarce.

Nature of inclined growth in thin-layer electrodeposition under uniform magnetic fields.

PubMed

Soba, Alejandro; González, Graciela; Calivar, Lucas; Marshall, Guillermo

2012-11-01

Electrochemical deposition (ECD) in thin cells in a vertical position relative to gravity, subject to an external uniform magnetic field, yields a growth pattern formation with dense branched morphology with branches tilted in the direction of the magnetic force. We study the nature of the inclined growth through experiments and theory. Experiments in ECD, in the absence of magnetic forces, reveal that a branch grows by allowing fluid to penetrate its tip and to be ejected from the sides through a pair of symmetric vortices attached to the tip. The upper vortices zone defines an arch separating an inner zone ion depleted and an outer zone in a funnel-like form with a concentrated solution through which metal ions are carried into the tip. When a magnetic field is turned on, vortex symmetry is broken, one vortex becoming weaker than the other, inducing an inclination of the funnel. Consequently, particles entering the funnel give rise to branch growth tilted in the same direction. Theory predicts, in the absence of a magnetic force, funnel symmetry induced through symmetric vortices driven by electric and gravitational forces; when the magnetic force is on, it is composed with the pair of clockwise and counterclockwise vortices, reducing or amplifying one or the other. In turn, funnel tilting modifies particle trajectories, thus, growth orientation.

Lead free CH{sub 3}NH{sub 3}SnI{sub 3} perovskite thin-film with p-type semiconducting nature and metal-like conductivity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iefanova, Anastasiia; Adhikari, Nirmal; Dubey, Ashish

Lead free CH{sub 3}NH{sub 3}SnI{sub 3} perovskite thin film was prepared by low temperature solution processing and characterized using current sensing atomic force microscopy (CS-AFM). Analysis of electrical, optical, and optoelectrical properties reveals unique p-type semiconducting nature and metal like conductivity of this material. CH{sub 3}NH{sub 3}SnI{sub 3} film also showed a strong absorption in visible and near infrared spectrum with absorption onset of 1.3 eV. X-ray Diffraction analysis and scanning electron microscopy (SEM) confirmed a structure of this compound and uniform film formation. The morphology, film uniformity, light harvesting and electrical properties strongly depend on preparation method and precursormore » solution. CH{sub 3}NH{sub 3}SnI{sub 3} films prepared based on dimethylformamide (DMF) showed higher crystallinity and light harvesting capability compared to the film based on combination of dimethyl sulfoxide (DMSO) with gamma-butyrolactone (GBL). Local photocurrent mapping analysis showed that CH{sub 3}NH{sub 3}SnI{sub 3} can be used as an active layer and have a potential to fabricate lead free photovoltaic devices.« less

Electroluminescence of thin-film CdTe solar cells and modules

NASA Astrophysics Data System (ADS)

Raguse, John Michael

Thin-film photovoltaics has the potential to be a major source of world electricity. Mitigation of non-uniformities in thin-film solar cells and modules may help improve photovoltaic conversion efficiencies. In this manuscript, a measurement technique is discussed in detail which has the capability of detecting such non-uniformities in a form useful for analysis. Thin-film solar cells emit radiation while operating at forward electrical bias, analogous to an LED, a phenomena known as electroluminescence (EL). This process relatively is inefficient for polycrystalline CdTe devices, on the order of 10-4%, as most of the energy is converted into heat, but still strong enough for many valuable measurements. A EL system was built at the Colorado State University Photovoltaics Laboratory to measure EL from CdTe cells and modules. EL intensity normalized to exposure time and injection current density has been found to correlate very well with the difference between ideal and measured open-circuit voltage from devices that include a GaAs cell, an AlGaAs LED, and several CdTe cells with variations in manufacturing. Furthermore, these data points were found to be in good agreement when overlaid with calibrated data from two additional sources. The magnitude of the inverse slope of the fit is in agreement with the thermal voltage and the intercept was found to have a value near unity, in agreement with theory. The expanded data set consists of devices made from one of seven different band gaps and spans eight decades of EQELED efficiencies. As expected, cells which exhibit major failure of light-dark J-V superposition did not follow trend of well-behaved cells. EL images of selected defects from CdTe cells and modules are discussed and images are shown to be highly sensitive to defects in devices, since the intensity depends exponentially on the cells' voltages. The EL technique has proven to be a useful high-throughput tool for screening of cells. In addition to EL images, other opto-electronics characterization techniques were used to analyze defects in cells and modules such as weak-diode areas, cell delineation near substrate edge, non-uniform chlorine passivation, holes in back contact, high-resistance foreign layer, high back-contact sheet resistance, a discontinuous P3 line scribe (intercell shunt) and shunt through a cell (intracell shunt). Although EL images are proficient at illustrating the location and severity of defects with potentially high spatial resolution and short measurement times, their ability to identify the cause of such defects is limited. EL in concert with Light-Beam-Induced Current (LBIC), however, makes for a powerful ensemble as LBIC can probe different film layers at arbitrary voltage bias conditions, albeit with increased measurement times and potentially reduced spatial resolution.

Multi-layer assemblies with predetermined stress profile and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2003-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Preparation and characterization of B4C coatings for advanced research light sources.

PubMed

Störmer, Michael; Siewert, Frank; Sinn, Harald

2016-01-01

X-ray optical elements are required for beam transport at the current and upcoming free-electron lasers and synchrotron sources. An X-ray mirror is a combination of a substrate and a coating. The demand for large mirrors with single layers consisting of light or heavy elements has increased during the last few decades; surface finishing technology is currently able to process mirror lengths up to 1 m with microroughness at the sub-nanometre level. Additionally, thin-film fabrication is able to deposit a suitable single-layer material, such as boron carbide (B4C), some tens of nanometres thick. After deposition, the mirror should provide excellent X-ray optical properties with respect to coating thickness errors, microroughness values and slope errors; thereby enabling the mirror to transport the X-ray beam with high reflectivity, high beam flux and an undistorted wavefront to an experimental station. At the European XFEL, the technical specifications of the future mirrors are extraordinarily challenging. The acceptable shape error of the mirrors is below 2 nm along the whole length of 1 m. At the Helmholtz-Zentrum Geesthacht (HZG), amorphous layers of boron carbide with thicknesses in the range 30-60 nm were fabricated using the HZG sputtering facility, which is able to cover areas up to 1500 mm long by 120 mm wide in one step using rectangular B4C sputtering targets. The available deposition area is suitable for the specified X-ray mirror dimensions of upcoming advanced research light sources such as the European XFEL. The coatings produced were investigated by means of X-ray reflectometry and interference microscopy. The experimental results for the B4C layers are discussed according to thickness uniformity, density, microroughness and thermal stability. The variation of layer thickness in the tangential and sagittal directions was investigated in order to estimate the achieved level of uniformity over the whole deposition area, which is considerably larger than the optical area of a mirror. A waisted mask was positioned during deposition between the sputtering source and substrate to improve the thickness uniformity; particularly to prevent the formation a convex film shape in the sagittal direction. Additionally the inclination of the substrate was varied to change the layer uniformity in order to optimize the position of the mirror quality deposited area during deposition. The level of mirror microroughness was investigated for different substrates before and after deposition of a single layer of B4C. The thermal stability of the B4C layers on the various substrate materials was investigated.

Preparation and characterization of B4C coatings for advanced research light sources

PubMed Central

Störmer, Michael; Siewert, Frank; Sinn, Harald

2016-01-01

X-ray optical elements are required for beam transport at the current and upcoming free-electron lasers and synchrotron sources. An X-ray mirror is a combination of a substrate and a coating. The demand for large mirrors with single layers consisting of light or heavy elements has increased during the last few decades; surface finishing technology is currently able to process mirror lengths up to 1 m with microroughness at the sub-nanometre level. Additionally, thin-film fabrication is able to deposit a suitable single-layer material, such as boron carbide (B4C), some tens of nanometres thick. After deposition, the mirror should provide excellent X-ray optical properties with respect to coating thickness errors, microroughness values and slope errors; thereby enabling the mirror to transport the X-ray beam with high reflectivity, high beam flux and an undistorted wavefront to an experimental station. At the European XFEL, the technical specifications of the future mirrors are extraordinarily challenging. The acceptable shape error of the mirrors is below 2 nm along the whole length of 1 m. At the Helmholtz-Zentrum Geesthacht (HZG), amorphous layers of boron carbide with thicknesses in the range 30–60 nm were fabricated using the HZG sputtering facility, which is able to cover areas up to 1500 mm long by 120 mm wide in one step using rectangular B4C sputtering targets. The available deposition area is suitable for the specified X-ray mirror dimensions of upcoming advanced research light sources such as the European XFEL. The coatings produced were investigated by means of X-ray reflectometry and interference microscopy. The experimental results for the B4C layers are discussed according to thickness uniformity, density, microroughness and thermal stability. The variation of layer thickness in the tangential and sagittal directions was investigated in order to estimate the achieved level of uniformity over the whole deposition area, which is considerably larger than the optical area of a mirror. A waisted mask was positioned during deposition between the sputtering source and substrate to improve the thickness uniformity; particularly to prevent the formation a convex film shape in the sagittal direction. Additionally the inclination of the substrate was varied to change the layer uniformity in order to optimize the position of the mirror quality deposited area during deposition. The level of mirror microroughness was investigated for different substrates before and after deposition of a single layer of B4C. The thermal stability of the B4C layers on the various substrate materials was investigated. PMID:26698045

Optical Properties of Hybrid Inorganic/Organic Thin Film Encapsulation Layers for Flexible Top-Emission Organic Light-Emitting Diodes.

PubMed

An, Jae Seok; Jang, Ha Jun; Park, Cheol Young; Youn, Hongseok; Lee, Jong Ho; Heo, Gi-Seok; Choi, Bum Ho; Lee, Choong Hun

2015-10-01

Inorganic/organic hybrid thin film encapsulation layers consist of a thin Al2O3 layer together with polymer material. We have investigated optical properties of thin film encapsulation layers for top-emission flexible organic light-emitting diodes. The transmittance of hybrid thin film encapsulation layers and the electroluminescent spectrum of organic light-emitting diodes that were passivated by hybrid organic/inorganic thin film encapsulation layers were also examined as a function of the thickness of inorganic Al203 and monomer layers. The number of interference peaks, their intensity, and their positions in the visible range can be controlled by varying the thickness of inorganic Al2O3 layer. On the other hand, changing the thickness of monomer layer had a negligible effect on the optical properties. We also verified that there is a trade-off between transparency in the visible range and the permeation of water vapor in hybrid thin film encapsulation layers. As the number of dyads decreased, optical transparency improved while the water vapor permeation barrier was degraded. Our study suggests that, in top-emission organic light-emitting diodes, the thickness of each thin film encapsulation layer, in particular that of the inorganic layer, and the number of dyads should be controlled for highly efficient top-emission flexible organic light-emitting diodes.

Effect of the Fabrication Parameters of the Nanosphere Lithography Method on the Properties of the Deposited Au-Ag Nanoparticle Arrays

PubMed Central

Liu, Jing; Chen, Chaoyang; Yang, Guangsong; Chen, Yushan; Yang, Cheng-Fu

2017-01-01

The nanosphere lithography (NSL) method can be developed to deposit the Au-Ag triangle hexagonal nanoparticle arrays for the generation of localized surface plasmon resonance. Previously, we have found that the parameters used to form the NSL masks and the physical methods required to deposit the Au-Ag thin films had large effects on the geometry properties of the nanoparticle arrays. Considering this, the different parameters used to grow the Au-Ag triangle hexagonal nanoparticle arrays were investigated. A single-layer NSL mask was formed by using self-assembly nano-scale polystyrene (PS) nanospheres with an average radius of 265 nm. At first, the concentration of the nano-scale PS nanospheres in the solution was set at 6 wt %. Two coating methods, drop-coating and spin-coating, were used to coat the nano-scale PS nanospheres as a single-layer NSL mask. From the observations of scanning electronic microscopy (SEM), we found that the matrixes of the PS nanosphere masks fabricated by using the drop-coating method were more uniform and exhibited a smaller gap than those fabricated by the spin-coating method. Next, the drop-coating method was used to form the single-layer NSL mask and the concentration of nano-scale PS nanospheres in a solution that was changed from 4 to 10 wt %, for further study. The SEM images showed that when the concentrations of PS nanospheres in the solution were 6 and 8 wt %, the matrixes of the PS nanosphere masks were more uniform than those of 4 and 10 wt %. The effects of the one-side lifting angle of substrates and the vaporization temperature for the solvent of one-layer self-assembly PS nanosphere thin films, were also investigated. Finally, the concentration of the nano-scale PS nanospheres in the solution was set at 8 wt % to form the PS nanosphere masks by the drop-coating method. Three different physical deposition methods, including thermal evaporation, radio-frequency magnetron sputtering, and e-gun deposition, were used to deposit the Au-Ag triangle hexagonal periodic nanoparticle arrays. The SEM images showed that as the single-layer PS nanosphere mask was well controlled, the thermal evaporation could deposit the Au-Ag triangle hexagonal nanoparticle arrays with a higher quality than the other two methods. PMID:28772741

Effect of the Fabrication Parameters of the Nanosphere Lithography Method on the Properties of the Deposited Au-Ag Nanoparticle Arrays.

PubMed

Liu, Jing; Chen, Chaoyang; Yang, Guangsong; Chen, Yushan; Yang, Cheng-Fu

2017-04-03

The nanosphere lithography (NSL) method can be developed to deposit the Au-Ag triangle hexagonal nanoparticle arrays for the generation of localized surface plasmon resonance. Previously, we have found that the parameters used to form the NSL masks and the physical methods required to deposit the Au-Ag thin films had large effects on the geometry properties of the nanoparticle arrays. Considering this, the different parameters used to grow the Au-Ag triangle hexagonal nanoparticle arrays were investigated. A single-layer NSL mask was formed by using self-assembly nano-scale polystyrene (PS) nanospheres with an average radius of 265 nm. At first, the concentration of the nano-scale PS nanospheres in the solution was set at 6 wt %. Two coating methods, drop-coating and spin-coating, were used to coat the nano-scale PS nanospheres as a single-layer NSL mask. From the observations of scanning electronic microscopy (SEM), we found that the matrixes of the PS nanosphere masks fabricated by using the drop-coating method were more uniform and exhibited a smaller gap than those fabricated by the spin-coating method. Next, the drop-coating method was used to form the single-layer NSL mask and the concentration of nano-scale PS nanospheres in a solution that was changed from 4 to 10 wt %, for further study. The SEM images showed that when the concentrations of PS nanospheres in the solution were 6 and 8 wt %, the matrixes of the PS nanosphere masks were more uniform than those of 4 and 10 wt %. The effects of the one-side lifting angle of substrates and the vaporization temperature for the solvent of one-layer self-assembly PS nanosphere thin films, were also investigated. Finally, the concentration of the nano-scale PS nanospheres in the solution was set at 8 wt % to form the PS nanosphere masks by the drop-coating method. Three different physical deposition methods, including thermal evaporation, radio-frequency magnetron sputtering, and e-gun deposition, were used to deposit the Au-Ag triangle hexagonal periodic nanoparticle arrays. The SEM images showed that as the single-layer PS nanosphere mask was well controlled, the thermal evaporation could deposit the Au-Ag triangle hexagonal nanoparticle arrays with a higher quality than the other two methods.

A boundary-integral representation for biphasic mixture theory, with application to the post-capillary glycocalyx

PubMed Central

Sumets, P. P.; Cater, J. E.; Long, D. S.; Clarke, R. J.

2015-01-01

We describe a new boundary-integral representation for biphasic mixture theory, which allows us to efficiently solve certain elastohydrodynamic–mobility problems using boundary element methods. We apply this formulation to model the motion of a rigid particle through a microtube which has non-uniform wall shape, is filled with a viscous Newtonian fluid, and is lined with a thin poroelastic layer. This is relevant to scenarios such as the transport of small rigid cells (such as neutrophils) through microvessels that are lined with an endothelial glycocalyx layer (EGL). In this context, we examine the impact of geometry upon some recently reported phenomena, including the creation of viscous eddies, fluid flux into the EGL, as well as the role of the EGL in transmitting mechanical signals to the underlying endothelial cells. PMID:26345494

Free-standing mesoporous carbon thin films with highly ordered pore architectures for nanodevices.

PubMed

Feng, Dan; Lv, Yingying; Wu, Zhangxiong; Dou, Yuqian; Han, Lu; Sun, Zhenkun; Xia, Yongyao; Zheng, Gengfeng; Zhao, Dongyuan

2011-09-28

We report for the first time the synthesis of free-standing mesoporous carbon films with highly ordered pore architecture by a simple coating-etching approach, which have an intact morphology with variable sizes as large as several square centimeters and a controllable thickness of 90 nm to ∼3 μm. The mesoporous carbon films were first synthesized by coating a resol precursors/Pluronic copolymer solution on a preoxidized silicon wafer and forming highly ordered polymeric mesostructures based on organic-organic self-assembly, followed by carbonizing at 600 °C and finally etching of the native oxide layer between the carbon film and the silicon substrate. The mesostructure of this free-standing carbon film is confirmed to be an ordered face-centered orthorhombic Fmmm structure, distorted from the (110) oriented body-centered cubic Im3̅m symmetry. The mesoporosity of the carbon films has been evaluated by nitrogen sorption, which shows a high specific BET surface area of 700 m(2)/g and large uniform mesopores of ∼4.3 nm. Both mesostructures and pore sizes can be tuned by changing the block copolymer templates or the ratio of resol to template. These free-standing mesoporous carbon films with cracking-free uniform morphology can be transferred or bent on different surfaces, especially with the aid of the soft polymer layer transfer technique, thus allowing for a variety of potential applications in electrochemistry and biomolecule separation. As a proof of concept, an electrochemical supercapacitor device directly made by the mesoporous carbon thin films shows a capacitance of 136 F/g at 0.5 A/g. Moreover, a nanofilter based on the carbon films has shown an excellent size-selective filtration of cytochrome c and bovine serum albumin.

Indium Oxide Thin Films by Atomic Layer Deposition Using Trimethylindium and Ozone

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mane, Anil U.; Allen, Amy J.; Kanjolia, Ravindra K.

We investigated the atomic layer deposition (ALD) of indium oxide (In2O3) thin films using alternating exposures of trimethylindium (TMIn) and a variety of oxygen sources: ozone (O-3), O-2, deionized H2O, and hydrogen peroxide (H2O2). We used in situ quartz crystal microbalance measurements to evaluate the effectiveness of the different oxygen sources and found that only O-3 yielded viable and sustained 111203 growth with TMIn. These measurements also provided details about the In2O3 growth mechanism and enabled us to verify that both the TMIn and O-3 surface reactions were self-limiting. In2O3 thin films were prepared and characterized using X-ray diffraction, ultravioletmore » visible spectrophotometry, spectroscopic ellipsometry, X-ray photoelectron spectroscopy, and scanning electron microscopy. The electrical transport properties of these layers were studied by Hall probe measurements. We found that, at deposition temperatures within the range of 100-200 degrees C, the In2O3 growth per cycle was nearly constant at 0.46 angstrom/cycle and the films were dense and pure. The film thickness was highly uniform (<0.3% variation) along the 45 cm length of our tubular ALD reactor. At higher growth temperatures the In2O3 growth per cycle increased due to thermal decomposition of the TMIn. The ALD In2O3 films showed resistivities as low as 3.2 x 10(-3) Omega cm, and carrier concentrations as large as 7.0 x 10(19) cm(-3). This TMIn/O-3 process for In2O3 ALD should be suitable for eventual scale-up in photovoltaics.« less

Composite polymeric film and method for its use in installing a very-thin polymeric film in a device

DOEpatents

Duchane, D.V.; Barthell, B.L.

1982-04-26

A composite polymeric film and a method for its use in forming and installing a very thin (< 10 ..mu..m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectiely dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to e successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Composite polymeric film and method for its use in installing a very thin polymeric film in a device

DOEpatents

Duchane, David V.; Barthell, Barry L.

1984-01-01

A composite polymeric film and a method for its use in forming and installing a very thin (<10 .mu.m) polymeric film are disclosed. The composite film consists of a thin film layer and a backing layer. The backing layer is soluble in a solvent in which the thin film layer is not soluble. In accordance with the method, the composite film is installed in a device in the same position in which it is sought to finally emplace the thin film. The backing layer is then selectively dissolved in the solvent to leave the insoluble thin film layer as an unbacked film. The method permits a very thin film to be successfully installed in devices where the fragility of the film would preclude handling and installation by conventional methods.

Synergistic effects of water addition and step heating on the formation of solution-processed zinc tin oxide thin films: towards high-mobility polycrystalline transistors

NASA Astrophysics Data System (ADS)

Huang, Genmao; Duan, Lian; Zhao, Yunlong; Zhang, Yunge; Dong, Guifang; Zhang, Deqiang; Qiu, Yong

2016-11-01

Thin-film transistors (TFTs) with high mobility and good uniformity are attractive for next-generation flat panel displays. In this work, solution-processed polycrystalline zinc tin oxide (ZTO) thin film with well-ordered microstructure is prepared, thanks to the synergistic effect of water addition and step heating. The step heating treatment other than direct annealing induces crystallization, while adequate water added to precursor solution further facilitates alloying and densification process. The optimal polycrystalline ZTO film is free of hierarchical sublayers, and featured with an increased amount of ternary phases, as well as a decreased fraction of oxygen vacancies and hydroxides. TFT devices based on such an active layer exhibit a remarkable field-effect mobility of 52.5 cm2 V-1 s-1, a current on/off ratio of 2 × 105, a threshold voltage of 2.32 V, and a subthreshold swing of 0.36 V dec-1. Our work offers a facile method towards high-performance solution-processed polycrystalline metal oxide TFTs.

Thin-film morphology of inkjet-printed single-droplet organic transistors using polarized Raman spectroscopy: effect of blending TIPS-pentacene with insulating polymer.

PubMed

James, David T; Kjellander, B K Charlotte; Smaal, Wiljan T T; Gelinck, Gerwin H; Combe, Craig; McCulloch, Iain; Wilson, Richard; Burroughes, Jeremy H; Bradley, Donal D C; Kim, Ji-Seon

2011-12-27

We report thin-film morphology studies of inkjet-printed single-droplet organic thin-film transistors (OTFTs) using angle-dependent polarized Raman spectroscopy. We show this to be an effective technique to determine the degree of molecular order as well as to spatially resolve the orientation of the conjugated backbones of the 6,13-bis(triisopropylsilylethynyl)pentacene (TIPS-Pentacene) molecules. The addition of an insulating polymer, polystyrene (PS), does not disrupt the π-π stacking of the TIPS-Pentacene molecules. Blending in fact improves the uniformity of the molecular morphology and the active layer coverage within the device and reduces the variation in molecular orientation between polycrystalline domains. For OTFT performance, blending enhances the saturation mobility from 0.22 ± 0.05 cm(2)/(V·s) (TIPS-Pentacene) to 0.72 ± 0.17 cm(2)/(V·s) (TIPS-Pentacene:PS) in addition to improving the quality of the interface between TIPS-Pentacene and the gate dielectric in the channel, resulting in threshold voltages of ∼0 V and steep subthreshold slopes.

Ta2O5/ Al2O3/ SiO2 - antireflective coating for non-planar optical surfaces by atomic layer deposition

NASA Astrophysics Data System (ADS)

Pfeiffer, K.; Schulz, U.; Tünnermann, A.; Szeghalmi, A.

2017-02-01

Antireflective coatings are essential to improve transmittance of optical elements. Most research and development of AR coatings has been reported on a wide variety of plane optical surfaces; however, antireflection is also necessary on nonplanar optical surfaces. Physical vapor deposition (PVD), a common method for optical coatings, often results in thickness gradients on strongly curved surfaces, leading to a failure of the desired optical function. In this work, optical thin films of tantalum pentoxide, aluminum oxide and silicon dioxide were prepared by atomic layer deposition (ALD), which is based on self-limiting surface reactions. The results demonstrate that ALD optical layers can be deposited on both vertical and horizontal substrate surfaces with uniform thicknesses and the same optical properties. A Ta2O5/Al2O3/ SiO2 multilayer AR coating (400-700 nm) was successfully applied to a curved aspheric glass lens with a diameter of 50 mm and a center thickness of 25 mm.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

NASA Astrophysics Data System (ADS)

Dechana, A.; Thamboon, P.; Boonyawan, D.

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber.

PubMed

Dechana, A; Thamboon, P; Boonyawan, D

2014-10-01

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides high flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al2O3 layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al2O3 films-analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques-will be discussed.

Preparation of a YAG:Ce phosphor glass by screen-printing technology and its application in LED packaging.

PubMed

Yang, Liang; Chen, Mingxiang; Lv, Zhicheng; Wang, Simin; Liu, Xiaogang; Liu, Sheng

2013-07-01

A simple and practical method for preparing phosphor glass is proposed. Phosphor distribution and element analysis are investigated by optical microscope and field emission scanning electron microscope (FE-SEM). The phosphor particles dispersed in the matrix are vividly observed, and their distributions are uniform. Spectrum distribution and color coordinates dependent on the thickness of the screen-printed phosphor layer coupled with a blue light emitting diode (LED) chip are studied. The luminous efficacy of the 75 μm printed phosphor-layer phosphor glass packaged white LED is 81.24 lm/W at 350 mA. This study opens up many possibilities for applications using the phosphor glass on a selected chip in which emission is well absorbed by all phosphors. The screen-printing technique also offers possibilities for the design and engineering of complex phosphor layers on glass substrates. Phosphor screen-printing technology allows the realization of high stability and thermal conductivity for the phosphor layer. This phosphor glass method provides many possibilities for LED packing, including thin-film flip chip and remote phosphor technology.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinson, A. B. F.; DeVries, M. J.; Libera, J. A.

Growing interest in Fe{sub 2}O{sub 3} as a light harvesting layer in solar energy conversion devices stems from its unique combination of stability, nontoxicity, and exceptionally low material cost. Unfortunately, the known methods for conformally coating high aspect ratio structures with Fe{sub 2}O{sub 3} leave a glaring gap in the technologically relevant temperature range of 170-350 C. Here, we elucidate a self-limiting atomic layer deposition (ALD) process for the growth of hematite, {alpha}-Fe{sub 2}O{sub 3}, over a moderate temperature window using ferrocene and ozone. At 200 C, the self-limiting growth of Fe{sub 2}O{sub 3} is observed at rates up tomore » 1.4 {angstrom}/cycle. Dense and robust thin films grown on both fused quartz and silicon exhibit the expected optical bandgap (2.1 eV). In situ mass spectrometric analysis reveals the evolution of two distinct cyclic reaction products during the layer-by-layer growth. The readily available and relatively high vapor pressure iron precursor is utilized to uniformly coat a high surface area template with aspect ratio 150.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martinson, Alex B.F.; DeVries, Michael J.; Libera, J. A.

Growing interest in Fe 2O 3 as a light harvesting layer in solar energy conversion devices stems from its unique combination of stability, nontoxicity, and exceptionally low material cost. Unfortunately, the known methods for conformally coating high aspect ratio structures with Fe 2O 3 leave a glaring gap in the technologically relevant temperature range of 170-350 °C. Here, we elucidate a self-limiting atomic layer deposition (ALD) process for the growth of hematite, α-Fe 2O 3, over a moderate temperature window using ferrocene and ozone. At 200 °C, the self-limiting growth of Fe 2O 3 is observed at rates up tomore » 1.4 Å/cycle. Dense and robust thin films grown on both fused quartz and silicon exhibit the expected optical bandgap (2.1 eV). In situ mass spectrometric analysis reveals the evolution of two distinct cyclic reaction products during the layer-by-layer growth. The readily available and relatively high vapor pressure iron precursor is utilized to uniformly coat a high surface area template with aspect ratio ~150.« less

Hydroquinone-ZnO nano-laminate deposited by molecular-atomic layer deposition

NASA Astrophysics Data System (ADS)

Huang, Jie; Lucero, Antonio T.; Cheng, Lanxia; Hwang, Hyeon Jun; Ha, Min-Woo; Kim, Jiyoung

2015-03-01

In this study, we have deposited organic-inorganic hybrid semiconducting hydroquinone (HQ)/zinc oxide (ZnO) superlattices using molecular-atomic layer deposition, which enables accurate control of film thickness, excellent uniformity, and sharp interfaces at a low deposition temperature (150 °C). Self-limiting growth of organic layers is observed for the HQ precursor on ZnO surface. Nano-laminates were prepared by varying the number of HQ to ZnO cycles in order to investigate the physical and electrical effects of different HQ to ZnO ratios. It is indicated that the addition of HQ layer results in enhanced mobility and reduced carrier concentration. The highest Hall mobility of approximately 2.3 cm2/V.s and the lowest n-type carrier concentration of approximately 1.0 × 1018/cm3 were achieved with the organic-inorganic superlattice deposited with a ratio of 10 ZnO cycles to 1 HQ cycle. This study offers an approach to tune the electrical transport characteristics of ALD ZnO matrix thin films using an organic dopant. Moreover, with organic embedment, this nano-laminate material may be useful for flexible electronics.

Multi-layered, chemically bonded lithium-ion and lithium/air batteries

DOEpatents

Narula, Chaitanya Kumar; Nanda, Jagjit; Bischoff, Brian L; Bhave, Ramesh R

2014-05-13

Disclosed are multilayer, porous, thin-layered lithium-ion batteries that include an inorganic separator as a thin layer that is chemically bonded to surfaces of positive and negative electrode layers. Thus, in such disclosed lithium-ion batteries, the electrodes and separator are made to form non-discrete (i.e., integral) thin layers. Also disclosed are methods of fabricating integrally connected, thin, multilayer lithium batteries including lithium-ion and lithium/air batteries.

Fabrication of low-temperature solid oxide fuel cells with a nanothin protective layer by atomic layer deposition

PubMed Central

2013-01-01

Anode aluminum oxide-supported thin-film fuel cells having a sub-500-nm-thick bilayered electrolyte comprising a gadolinium-doped ceria (GDC) layer and an yttria-stabilized zirconia (YSZ) layer were fabricated and electrochemically characterized in order to investigate the effect of the YSZ protective layer. The highly dense and thin YSZ layer acted as a blockage against electron and oxygen permeation between the anode and GDC electrolyte. Dense GDC and YSZ thin films were fabricated using radio frequency sputtering and atomic layer deposition techniques, respectively. The resulting bilayered thin-film fuel cell generated a significantly higher open circuit voltage of approximately 1.07 V compared with a thin-film fuel cell with a single-layered GDC electrolyte (approximately 0.3 V). PMID:23342963

Thin film electronic devices with conductive and transparent gas and moisture permeation barriers

DOEpatents

Simpson, Lin Jay

2015-07-28

Thin film electronic devices (or stacks integrated with a substrate) that include a permeation barrier formed of a thin layer of metal that provides a light transmitting and electrically conductive layer, wherein the electrical conductive layer is formed on a surface of the substrate or device layer such as a transparent conducting material layer with pin holes or defects caused by manufacturing and the thin layer of metal is deposited on the conductive layer and formed from a self-healing metal that forms self-terminating oxides. A permeation plug or block is formed in or adjacent to the thin film of metal at or proximate to the pin holes to block further permeation of contaminants through the pin holes.

Large area polysilicon films with predetermined stress characteristics and method for producing same

NASA Technical Reports Server (NTRS)

Heuer, Arthur H. (Inventor); Kahn, Harold (Inventor); Yang, Jie (Inventor); Phillips, Stephen M. (Inventor)

2002-01-01

Multi-layer assemblies of polysilicon thin films having predetermined stress characteristics and techniques for forming such assemblies are disclosed. In particular, a multi-layer assembly of polysilicon thin films may be produced that has a stress level of zero, or substantially so. The multi-layer assemblies comprise at least one constituent thin film having a tensile stress and at least one constituent thin film having a compressive stress. The thin films forming the multi-layer assemblies may be disposed immediately adjacent to one another without the use of intermediate layers between the thin films. Multi-layer assemblies exhibiting selectively determinable overall bending moments are also disclosed. Selective production of overall bending moments in microstructures enables manufacture of such structures with a wide array of geometrical configurations.

Comparison Between Navier-Stokes and Thin-Layer Computations for Separated Supersonic Flow

NASA Technical Reports Server (NTRS)

Degani, David; Steger, Joseph L.

1983-01-01

In the numerical simulation of high Reynolds-number flow, one can frequently supply only enough grid points to resolve the viscous terms in a thin layer. As a consequence, a body-or stream-aligned coordinate system is frequently used and viscous terms in this direction are discarded. It is argued that these terms cannot be resolved and computational efficiency is gained by their neglect. Dropping the streamwise viscous terms in this manner has been termed the thin-layer approximation. The thin-layer concept is an old one, and similar viscous terms are dropped, for example, in parabolized Navier-Stokes schemes. However, such schemes also make additional assumptions so that the equations can be marched in space, and such a restriction is not usually imposed on a thin-layer model. The thin-layer approximation can be justified in much the same way as the boundary-layer approximation; it requires, therefore, a body-or stream-aligned coordinate and a high Reynolds number. Unlike the boundary-layer approximation, the same equations are used throughout, so there is no matching problem. Furthermore, the normal momentum equation is not simplified and the convection terms are not one-sided differenced for marching. Consequently, the thin-layer equations are numerically well behaved at separation and require no special treatment there. Nevertheless, the thin-layer approximation receives criticism. It has been suggested that the approximation is invalid at separation and, more recently, that it is inadequate for unsteady transonic flow. Although previous comparisons between the thin-layer and Navier-Stokes equations have been made, these comparisons have not been adequately documented.

Uniformly thinned optical fibers produced via HF etching with spectral and microscopic verification.

PubMed

Bal, Harpreet K; Brodzeli, Zourab; Dragomir, Nicoleta M; Collins, Stephen F; Sidiroglou, Fotios

2012-05-01

A method for producing uniformly thinned (etched) optical fibers is described, which can also be employed to etch optical fibers containing a Bragg grating (FBG) uniformly for evanescent-field-based sensing and other applications. Through a simple modification of this method, the fabrication of phase-shifted FBGs based on uneven etching is also shown. The critical role of how a fiber is secured is shown, and the success of the method is illustrated, by differential interference contrast microscopy images of uniformly etched FBGs. An etched FBG sensor for the monitoring of the refractive index of different glycerin solutions is demonstrated.

Retinal profile and structural differences between myopes and emmetropes

NASA Astrophysics Data System (ADS)

Clark, Christopher Anderson

Refractive development has been shown to be influenced by optical defocus in the eye and the interpretation of this signal appears to be localized in the retina. Optical defocus is not uniform across the retina and has been suggested as a potential cause of myopia development. Specifically hyperopic focus, i.e. focusing light behind the retina, may signal the eye to elongate, causing myopia. This non-uniform hyperopic signal appears to be due to the retinal shape. Ultimately, these signals are detected by the retina in an as yet undetermined manner. The purpose of this thesis is to examine the retinal profile using a novel method developed at Indiana University and then to examine retinal structural changes across the retina associated with myopia. Myopes exhibited more prolate retinas than hyperopes/emmetropes using the SD OCT. Using the SD OCT, this profile difference was detectable starting at 5 degrees from the fovea, which was closer than previously reported in the literature. These results agreed significantly with results found from peripheral refraction and peripheral axial length at 10 degrees. Overall, the total retina was thinner for myopes than hyperopes/emmetropes. It was also statistically significantly thinner for the Outer Nuclear Layer (ONL), Inner Nuclear Layer (INL) and Outer Plexiform Layer (OPL) but not for other retinal layers such as the Ganglion Layer. Thinning generally occurred outside of 5 degrees. The SD OCT method provided a nearly 10 fold increase in sensitivity which allowed for detection of profile changes closer to the fovea. The location of the retinal changes may be interesting as the layers that showed significant differences in thickness are also layers that contain cells believed to be associated with refractive development (amacrine, bipolar, and photoreceptor cells.) The reason for the retinal changes cannot be determined with this study, but possible theories include stretch due to axial elongation, neural remodeling due to blur, and/or direct influence on refractive development due to neural cell densities.

Multilayer composites and manufacture of same

DOEpatents

Holesinger, Terry G.; Jia, Quanxi

2006-02-07

The present invention is directed towards a process of depositing multilayer thin films, disk-shaped targets for deposition of multilayer thin films by a pulsed laser or pulsed electron beam deposition process, where the disk-shaped targets include at least two segments with differing compositions, and a multilayer thin film structure having alternating layers of a first composition and a second composition, a pair of the alternating layers defining a bi-layer wherein the thin film structure includes at least 20 bi-layers per micron of thin film such that an individual bi-layer has a thickness of less than about 100 nanometers.

Automated thinning increases uniformity of in-row spacing and plant size in romaine lettuce

USDA-ARS?s Scientific Manuscript database

Low availability and high cost of farm hand labor make automated thinners a faster and cheaper alternative to hand thinning in lettuce (Lactuca sativa L.). However, the effects of this new technology on uniformity of plant spacing and size as well as crop yield are not proven. Three experiments wer...

Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

NASA Astrophysics Data System (ADS)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

2017-09-01

SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.

Sound Power Minimization of Circular Plates Through Damping Layer Placement

NASA Astrophysics Data System (ADS)

Wodtke, H.-W.; Lamancusa, J. S.

1998-09-01

Damping layers, widely used for noise and vibration control of thin-walled structures, can be designed to provide an optimal trade-off between performance and weight which is of particular importance in the automotive and aircraft industry. The goal of the presented work is the minimization of sound power radiated from plates under broadband excitation by redistribution of unconstrained damping layers. The total radiated sound power is assumed to be represented by the sound power radiated at the structural resonances. Resonance tracking is performed by means of single-degree-of-freedom (SDOF)-approximations based on near-resonance responses and their frequency derivatives. Axisymmetric vibrations of circular plates under several boundary and forcing conditions are considered. Frequency dependent Young's modulus and loss factor of the damping material are taken into account. Vibration analysis is based on the finite element method (FEM) while acoustic radiation is treated by means of Rayleigh's integral formula. It is shown that, starting from a uniform damping layer distribution, substantial reduction in radiated sound power can be achieved through redistribution of the damping layers. Depending on the given situation, these reductions are not only due to amplitude reductions but also to changes in vibration shapes and frequencies.

Decomposition of ultrathin LiF cathode underlayer in organic-based devices evidenced by ToF-SIMS depth profiling

NASA Astrophysics Data System (ADS)

Pakhomov, Georgy L.; Drozdov, Mikhail N.; Travkin, Vlad V.; Bochkarev, Mikhail N.

2017-11-01

In this work we investigate the chemical composition of an archetypal thin-film organic device with the Ag/LiF cathode using the time-of-flight secondary ion mass spectrometry (ToF-SIMS) with depth profiling. The LiF cathode underlayer is partly decomposed because a significant amount of lithium is released into the bulk of the multilayer device. The released lithium diffuses all the way to the substrate, accumulating, as revealed by ToF-SIMS depth profiles, at the interfaces rather than uniformly doping the underlying layers. Particularly, the bottom anode becomes chemically modified.

Plasma treatment of polyethylene tubes in continuous regime using surface dielectric barrier discharge with water electrodes

NASA Astrophysics Data System (ADS)

Galmiz, Oleksandr; Zemánek, Miroslav; Pavliňák, David; Černák, Mirko

2018-05-01

Combining the surface dielectric barrier discharges generated in contact with water based electrolytes, as the discharge electrodes, we have designed a new type of surface electric discharge, generating thin layers of plasma which propagate along the treated polymer surfaces. The technique was aimed to achieve uniform atmospheric pressure plasma treatment of polymeric tubes and other hollow bodies. The results presented in this work show the possibility of such system to treat outer surface of polymer materials in a continuous mode. The technical details of experimental setup are discussed as well as results of treatment of polyethylene tubes are shown.

Casting of particle-based hollow shapes

DOEpatents

Menchhofer, P.

1997-09-09

A method is disclosed for the production of hollow articles made of a particle-based material; e.g., ceramics and sintered metals. In accordance with one aspect of the invention, a thermally settable slurry containing a relatively high concentration of the particles is coated onto a prewarmed continuous surface in a relatively thin layer so that the slurry is substantially uniformly coated on the surface. The heat of the prewarmed surface conducts to the slurry to initiate a reaction which causes the slurry to set or harden in a shape conforming to the surface. The hardened configurations may then be sintered to consolidate the particles and provide a high density product. 9 figs.

Casting of particle-based hollow shapes

DOEpatents

Menchhofer, P.

1995-05-30

A method is disclosed for the production of hollow articles made of a particle-based material; e.g., ceramics and sintered metals. In accordance with one aspect of the invention, a thermally settable slurry containing a relatively high concentration of the particles is coated onto a prewarmed continuous surface in a relatively thin layer so that the slurry is substantially uniformly coated on the surface. The heat of the prewarmed surface conducts to the slurry to initiate a reaction which causes the slurry to set or harden in a shape conforming to the surface. The hardened configurations may then be sintered to consolidate the particles and provide a high density product. 9 figs.

Enhanced Optical and Electrical Properties of Polymer-Assisted All-Inorganic Perovskites for Light-Emitting Diodes.

PubMed

Ling, Yichuan; Tian, Yu; Wang, Xi; Wang, Jamie C; Knox, Javon M; Perez-Orive, Fernando; Du, Yijun; Tan, Lei; Hanson, Kenneth; Ma, Biwu; Gao, Hanwei

2016-10-01

Highly bright light-emitting diodes based on solution-processed all-inorganic perovskite thin film are demonstrated. The cesium lead bromide (CsPbBr 3 ) created using a new poly(ethylene oxide)-additive spin-coating method exhibits photoluminescence quantum yield up to 60% and excellent uniformity of electrical current distribution. Using the smooth CsPbBr 3 films as emitting layers, green perovskite-based light-emitting diodes (PeLEDs) exhibit electroluminescent brightness and efficiency above 53 000 cd m -2 and 4%: a new benchmark of device performance for all-inorganic PeLEDs. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Casting of particle-based hollow shapes

DOEpatents

Menchhofer, Paul

1997-01-01

A method for the production of hollow articles made of a particle-based material; e.g., ceramics and sintered metals. In accordance with one aspect of the invention, a thermally settable slurry containing a relatively high concentration of the particles is coated onto a prewarmed continuous surface in a relatively thin layer so that the slurry is substantially uniformly coated on the surface. The heat of the prewarmed surface conducts to the slurry to initiate a reaction which causes the slurry to set or harden in a shape conforming to the surface. The hardened configurations may then be sintered to consolidate the particles and provide a high density product.

Casting of particle-based hollow shapes

DOEpatents

Menchhofer, Paul

1995-01-01

A method for the production of hollow articles made of a particle-based material; e.g., ceramics and sintered metals. In accordance with one aspect of the invention, a thermally settable slurry containing a relatively high concentration of the particles is coated onto a prewarmed continuous surface in a relatively thin layer so that the slurry is substantially uniformly coated on the surface. The heat of the prewarmed surface conducts to the slurry to initiate a reaction which causes the slurry to set or harden in a shape conforming to the surface. The hardened configurations may then be sintered to consolidate the particles and provide a high density product.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R.; Lunt, Richard R.

2016-04-05

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Ordered organic-organic multilayer growth

DOEpatents

Forrest, Stephen R; Lunt, Richard R

2015-01-13

An ordered multilayer crystalline organic thin film structure is formed by depositing at least two layers of thin film crystalline organic materials successively wherein the at least two thin film layers are selected to have their surface energies within .+-.50% of each other, and preferably within .+-.15% of each other, whereby every thin film layer within the multilayer crystalline organic thin film structure exhibit a quasi-epitaxial relationship with the adjacent crystalline organic thin film.

Highly uniform resistive switching properties of amorphous InGaZnO thin films prepared by a low temperature photochemical solution deposition method.

PubMed

Hu, Wei; Zou, Lilan; Chen, Xinman; Qin, Ni; Li, Shuwei; Bao, Dinghua

2014-04-09

We report on highly uniform resistive switching properties of amorphous InGaZnO (a-IGZO) thin films. The thin films were fabricated by a low temperature photochemical solution deposition method, a simple process combining chemical solution deposition and ultraviolet (UV) irradiation treatment. The a-IGZO based resistive switching devices exhibit long retention, good endurance, uniform switching voltages, and stable distribution of low and high resistance states. Electrical conduction mechanisms were also discussed on the basis of the current-voltage characteristics and their temperature dependence. The excellent resistive switching properties can be attributed to the reduction of organic- and hydrogen-based elements and the formation of enhanced metal-oxide bonding and metal-hydroxide bonding networks by hydrogen bonding due to UV irradiation, based on Fourier-transform-infrared spectroscopy, X-ray photoelectron spectroscopy, and Field emission scanning electron microscopy analysis of the thin films. This study suggests that a-IGZO thin films have potential applications in resistive random access memory and the low temperature photochemical solution deposition method can find the opportunity for further achieving system on panel applications if the a-IGZO resistive switching cells were integrated with a-IGZO thin film transistors.

Nano-crystalline thin and nano-particulate thick TiO{sub 2} layer: Cost effective sequential deposition and study on dye sensitized solar cell characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Das, P.; Sengupta, D.; CSIR-Central Mechanical Engineering Research Institute, Academy of Scientific and Innovative Research

Highlights: • Thin TiO{sub 2} layer is deposited on conducting substrate using sol–gel based dip coating. • TiO{sub 2} nano-particles are synthesized using hydrothermal route. • Thick TiO{sub 2} particulate layer is deposited on prepared thin layer. • Dye sensitized solar cells are made using thin and thick layer based photo-anode. • Introduction of thin layer in particulate photo-anode improves the cell efficiency. - Abstract: A compact thin TiO{sub 2} passivation layer is introduced between the mesoporous TiO{sub 2} nano-particulate layer and the conducting glass substrate to prepare photo-anode for dye-sensitized solar cell (DSSC). In order to understand the effectmore » of passivation layer, other two DSSCs are also developed separately using TiO{sub 2} nano-particulate and compact thin film based photo-anodes. Nano-particles are prepared using hydrothermal synthesis route and the compact passivation layer is prepared by simply dip coating the precursor sol prepared through wet chemical route. The TiO{sub 2} compact layer and the nano-particles are characterised in terms of their micro-structural features and phase formation behavior. It is found that introduction of a compact TiO{sub 2} layer in between the mesoporous TiO{sub 2} nano-particulate layer and the conducting substrate improves the solar to electric conversion efficiency of the fabricated cell. The dense thin passivation layer is supposed to enhance the photo-excited electron transfer and prevent the recombination of photo-excited electrons.« less

The Magnetohydrodynamic Kelvin-Helmholtz Instability. III. The Role of Sheared Magnetic Field in Planar Flows

NASA Astrophysics Data System (ADS)

Jeong, Hyunju; Ryu, Dongsu; Jones, T. W.; Frank, Adam

2000-01-01

We have carried out simulations of the nonlinear evolution of the magnetohydrodynamic (MHD) Kelvin-Helmholtz (KH) instability for compressible fluids in 2.5 dimensions, extending our previous work by Frank et al. and Jones et al. In the present work we have simulated flows in the x-y plane in which a ``sheared'' magnetic field of uniform strength smoothly rotates across a thin velocity shear layer from the z-direction to the x-direction, aligned with the flow field. The sonic Mach number of the velocity transition is unity. Such flows containing a uniform field in the x-direction are linearly stable if the magnetic field strength is great enough that the Alfvénic Mach number MA=U0/cA<2. That limit does not apply directly to sheared magnetic fields, however, since the z-field component has almost no influence on the linear stability. Thus, if the magnetic shear layer is contained within the velocity shear layer, the KH instability may still grow, even when the field strength is quite large. So, here we consider a wide range of sheared field strengths covering Alfvénic Mach numbers, MA=142.9 to 2. We focus on dynamical evolution of fluid features, kinetic energy dissipation, and mixing of the fluid between the two layers, considering their dependence on magnetic field strength for this geometry. There are a number of differences from our earlier simulations with uniform magnetic fields in the x-y plane. For the latter, simpler case we found a clear sequence of behaviors with increasing field strength ranging from nearly hydrodynamic flows in which the instability evolves to an almost steady cat's eye vortex with enhanced dissipation, to flows in which the magnetic field disrupts the cat's eye once it forms, to, finally, flows that evolve very little before field-line stretching stabilizes the velocity shear layer. The introduction of magnetic shear can allow a cat's eye-like vortex to form, even when the field is stronger than the nominal linear instability limit given above. For strong fields that vortex is asymmetric with respect to the preliminary shear layer, however, so the subsequent dissipation is enhanced over the uniform field cases of comparable field strength. In fact, so long as the magnetic field achieves some level of dynamical importance during an eddy turnover time, the asymmetries introduced through the magnetic shear will increase flow complexity and, with that, dissipation and mixing. The degree of the fluid mixing between the two layers is strongly influenced by the magnetic field strength. Mixing of the fluid is most effective when the vortex is disrupted by magnetic tension during transient reconnection, through local chaotic behavior that follows.

An Electrochemical Experiment Using an Optically Transparent Thin Layer Electrode

ERIC Educational Resources Information Center

DeAngelis, Thomas P.; Heineman, William R.

1976-01-01

Describes a unified experiment in which an optically transparent thin layer electrode is used to illustrate the techniques of thin layer electrochemistry, cyclic voltammetry, controlled potential coulometry, and spectroelectrochemistry. (MLH)

Rectenna that converts infrared radiation to electrical energy

DOEpatents

Davids, Paul; Peters, David W.

2016-09-06

Technologies pertaining to converting infrared (IR) radiation to DC energy are described herein. In a general embodiment, a rectenna comprises a conductive layer. A thin insulator layer is formed on the conductive layer, and a nanoantenna is formed on the thin insulator layer. The thin insulator layer acts as a tunnel junction of a tunnel diode.

Cadmium-free junction fabrication process for CuInSe.sub.2 thin film solar cells

DOEpatents

Ramanathan, Kannan V.; Contreras, Miguel A.; Bhattacharya, Raghu N.; Keane, James; Noufi, Rommel

1999-01-01

The present invention provides an economical, simple, dry and controllable semiconductor layer junction forming process to make cadmium free high efficiency photovoltaic cells having a first layer comprised primarily of copper indium diselenide having a thin doped copper indium diselenide n-type region, generated by thermal diffusion with a group II(b) element such as zinc, and a halide, such as chlorine, and a second layer comprised of a conventional zinc oxide bilayer. A photovoltaic device according the present invention includes a first thin film layer of semiconductor material formed primarily from copper indium diselenide. Doping of the copper indium diselenide with zinc chloride is accomplished using either a zinc chloride solution or a solid zinc chloride material. Thermal diffusion of zinc chloride into the copper indium diselenide upper region creates the thin n-type copper indium diselenide surface. A second thin film layer of semiconductor material comprising zinc oxide is then applied in two layers. The first layer comprises a thin layer of high resistivity zinc oxide. The second relatively thick layer of zinc oxide is doped to exhibit low resistivity.

Modeling Geoelectric Fields and Geomagnetically Induced Currents Around New Zealand to Explore GIC in the South Island's Electrical Transmission Network

NASA Astrophysics Data System (ADS)

Divett, T.; Ingham, M.; Beggan, C. D.; Richardson, G. S.; Rodger, C. J.; Thomson, A. W. P.; Dalzell, M.

2017-10-01

Transformers in New Zealand's South Island electrical transmission network have been impacted by geomagnetically induced currents (GIC) during geomagnetic storms. We explore the impact of GIC on this network by developing a thin-sheet conductance (TSC) model for the region, a geoelectric field model, and a GIC network model. (The TSC is composed of a thin-sheet conductance map with underlying layered resistivity structure.) Using modeling approaches that have been successfully used in the United Kingdom and Ireland, we applied a thin-sheet model to calculate the electric field as a function of magnetic field and ground conductance. We developed a TSC model based on magnetotelluric surveys, geology, and bathymetry, modified to account for offshore sediments. Using this representation, the thin sheet model gave good agreement with measured impedance vectors. Driven by a spatially uniform magnetic field variation, the thin-sheet model results in electric fields dominated by the ocean-land boundary with effects due to the deep ocean and steep terrain. There is a strong tendency for the electric field to align northwest-southeast, irrespective of the direction of the magnetic field. Applying this electric field to a GIC network model, we show that modeled GIC are dominated by northwest-southeast transmission lines rather than east-west lines usually assumed to dominate.

Adsorption, Desorption, and Diffusion of Nitrogen in a Model Nanoporous Material: II. Diffusion Limited Kinetics in Amorphous Solid Water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zubkov, Tykhon; Smith, R. Scott; Engstrom, Todd R.

2007-11-14

Tykhon Zubkov, R. Scott Smith, Todd R. Engstrom, and Bruce D. Kay The adsorption, desorption, and diffusion kinetics of N2 on thick (up to ~9 mm) porous films of amorphous solid water (ASW) films were studied using molecular beam techniques and temperature programmed desorption (TPD). Porous ASW films were grown on Pt(111) at low temperature (<30 K) from a collimated H2O beam at glancing incident angles. In thin films (<1 mm), the desorption kinetics are well described by a model that assumes rapid and uniform N2 distribution throughout the film. In thicker films, (>1 mm), N2 adsorption at 27 Kmore » results in a non-uniform distribution where most of N2 is trapped in the outer region of the film. Redistribution of N2 can be induced by thermal annealing. The apparent activation energy for this process is ~7 kJ/mol, which is approximately half of the desorption activation energy at the corresponding coverage. Blocking adsorption sites near the film surface facilitates transport into the film. Despite the onset of limited diffusion, the adsorption kinetics are efficient, precursor-mediated and independent of film thickness. An adsorption mechanism is proposed, in which a high-coverage N2 front propagates into a pore by the rapid transport of physisorbed 2nd layer N2 species on top of the 1st layer chemisorbed layer.« less

Alveolar Thin Layer Flows and Surfactant Dynamics

NASA Astrophysics Data System (ADS)

Roumie, Ahmad; Jbaily, Abdulrahman; Szeri, Andrew J.

2017-11-01

Pulmonary surfactants play a vital role in everyday respiration. They regulate surface tension in the lungs by diffusing through the hypophase, a liquid layer that lines the interior surface of the alveoli, and adsorbing to the existing air-fluid interface. This decreases the equilibrium surface tension value by as much as a factor of 3, minimizing breathing effort and preventing lung collapse at the end of exhalation. Given that the hypophase thickness h lies within the range 0.1 μm < h <0.5 μm , and that the average alveolar radius R is 100 μm , for some purposes the hypophase may usefully be modeled as a fluid layer on a flat sheet representing the alveolar wall. Moreover, because of the large aspect ratio, the lubrication approximation can be applied. The aim of the present work is to study the interaction between the straining of the alveolar wall and the fluid flow in the hypophase. The analysis is governed by the relative magnitudes of the time scales of surfactant diffusion, adsorption, desorption, viscous dissipation and sheet straining. Cases of particular interest include non-uniform surfactant concentration at the interface, leading to Marangoni flows and a non-uniform hypophase thickness profile. The analytical formulation and numerical simulations are presented. This work is motivated by a need to understand alveolar deformation during breathing, and to do so in a way that derives from improved understanding of the fluid mechanics of the problem.

Low temperature growth of ZnO nanorods array via solution-immersion on TiO2 seed layer

NASA Astrophysics Data System (ADS)

Asib, N. A. M.; Aadila, A.; Afaah, A. N.; Rusop, M.; Khusaimi, Z.

2018-05-01

In this work, TiO2:ZNR thin films were successfully fabricated on glass substrates at low temperatures of 75 to 90°C. The substrates were coated with titanium dioxide (TiO2) using sol-gel spin coating, which act as seed layer to grow zinc oxide nanorods (ZNR) by solution-immersion method. At 90 and 95° C, ZNR with hexagonal tip are well dispersed without any aggregation and exhibit more uniform nanorods array as observed using FESEM. The diffraction peak intensity of the (0 0 2)-plane increased as the temperature increased, indicating improved orientation in the c-axis direction of the ZNR as detected in XRD patterns. From UV-Vis absorbance spectra, it was found that the samples has higher absorption properties at middle range of immersion temperatures; 80, 85 and 90°C.

Simulations of induced-charge electro-osmosis in microfluidic devices

NASA Astrophysics Data System (ADS)

Ben, Yuxing

2005-03-01

Theories of nonlinear electrokinetic phenomena generally assume a uniform, neutral bulk electroylte in contact with a polarizable thin double layer near a metal or dielectric surface, which acts as a "capacitor skin". Induced-charge electro-osmosis (ICEO) is the general effect of nonlinear electro-osmotic slip, when an applied electric field acts on its own induced (diffuse) double-layer charge. In most theoretical and experimental work, ICEO has been studied in very simple geometries, such as colloidal spheres and planar, periodic micro-electrode arrays. Here we use finite-element simulations to predict how more complicated geometries of polarizable surfaces and/or electrodes yield flow profiles with subtle dependence on the amplitude and frequency of the applied voltage. We also consider how the simple model equations break down, due to surface conduction, bulk diffusion, and concentration polarization, for large applied voltages (as in most experiments).

Soft X-Ray Optics by Pulsed Laser Deposition

NASA Technical Reports Server (NTRS)

Fernandez, Felix E.

1996-01-01

Mo/Si and C/Co multilayers for soft x-ray optics were designed for spectral regions of interest in possible applications. Fabrication was effected by Pulsed Laser Deposition using Nd:YAG (355 nm) or excimer (248 nm) lasers in order to evaluate the suitability of this technique. Results for Mo/Si structures were not considered satisfactory due mainly to problems with particulate production and target surface modification during Si ablation. These problems may be alleviated by a two-wavelength approach, using separate lasers for each target. Results for C/Co multilayers are much more encouraging, since indication of good layering was observed for extremely thin layers. We expect to continue investigating this possibility. In order to compete with traditional PVD techniques, it is necessary to achieve film coverage uniformity over large enough areas. It was shown that this is feasible, and novel means of achieving it were devised.

Characterization of Cu buffer layers for growth of L10-FeNi thin films

NASA Astrophysics Data System (ADS)

Mizuguchi, M.; Sekiya, S.; Takanashi, K.

2010-05-01

A Cu(001) layer was fabricated on a Au(001) layer to investigate the use of Cu as a buffer layer for growing L10-FeNi thin films. The epitaxial growth of a Cu buffer layer was observed using reflection high-energy electron diffraction. The flatness of the layer improved drastically with an increase in the substrate temperature although the layer was an alloy (AuCu3). An FeNi thin film was epitaxially grown on the AuCu3 buffer layer by alternate monatomic layer deposition and the formation of an L10-FeNi ordered alloy was expected. The AuCu3 buffer layer is thus a promising candidate material for the growth of L10-FeNi thin films.

Nonlinear effects on electrophoresis of a charged dielectric nanoparticle in a charged hydrogel medium

NASA Astrophysics Data System (ADS)

Bhattacharyya, S.; De, Simanta

2016-09-01

The impact of the solid polarization of a charged dielectric particle in gel electrophoresis is studied without imposing a weak-field or a thin Debye length assumption. The electric polarization of a dielectric particle due to an external electric field creates a non-uniform surface charge density, which in turn creates a non-uniform Debye layer at the solid-gel interface. The solid polarization of the particle, the polarization of the double layer, and the electro-osmosis of mobile ions within the hydrogel medium create a nonlinear effect on the electrophoresis. We have incorporated those nonlinear effects by considering the electrokinetics governed by the Stokes-Brinkman-Nernst-Planck-Poisson equations. We have computed the governing nonlinear coupled set of equations numerically by adopting a finite volume based iterative algorithm. Our numerical method is tested for accuracy by comparing with several existing results on free-solution electrophoresis as well as results based on the Debye-Hückel approximation. Our computed result shows that the electrophoretic velocity decreases with the rise of the particle dielectric permittivity constant and attains a saturation limit at large values of permittivity. A significant impact of the solid polarization is found in gel electrophoresis compared to the free-solution electrophoresis.

Uniform deposition of uranium hexafluoride (UF6): Standardized mass deposits and controlled isotopic ratios using a thermal fluorination method.

PubMed

McNamara, Bruce K; O'Hara, Matthew J; Casella, Andrew M; Carter, Jennifer C; Addleman, R Shane; MacFarlan, Paul J

2016-07-01

We report a convenient method for the generation of volatile uranium hexafluoride (UF6) from solid uranium oxides and other U compounds, followed by uniform deposition of low levels of UF6 onto sampling coupons. Under laminar flow conditions, UF6 is shown to interact with surfaces within a fixed reactor geometry to a highly predictable degree. We demonstrate the preparation of U deposits that range between approximately 0.01 and 500ngcm(-2). The data suggest the method can be extended to creating depositions at the sub-picogramcm(-2) level. The isotopic composition of the deposits can be customized by selection of the U source materials and we demonstrate a layering technique whereby two U solids, each with a different isotopic composition, are employed to form successive layers of UF6 on a surface. The result is an ultra-thin deposit that bears an isotopic signature that is a composite of the two U sources. The reported deposition method has direct application to the development of unique analytical standards for nuclear safeguards and forensics. Further, the method allows access to very low atomic or molecular coverages of surfaces. Copyright © 2016 Elsevier B.V. All rights reserved.

Controlled growth of vertically aligned carbon nanotubes on metal substrates

NASA Astrophysics Data System (ADS)

Gao, Zhaoli

Carbon nanotube (CNT) is a fascinating material with extraordinary electrical thermal and mechanical properties. Growing vertically aligned CNT (VACNT) arrays on metal substrates is an important step in bringing CNT into practical applications such as thermal interface materials (TIMs) and microelectrodes. However, the growth process is challenging due to the difficulties in preventing catalyst diffusion and controlling catalyst dewetting on metal substrates with physical surface heterogeneity. In this work, the catalyst diffusion mechanism and catalyst dewetting theory were studied for the controlled growth of VACNTs on metal substrates. The diffusion time of the catalyst, the diffusion coefficients for the catalyst in the substrate materials and the number density of catalyst nanoparticles after dewetting are identified as the key parameters, based on which three strategies are developed. Firstly, a fast-heating catalyst pretreatment strategy was used, aiming at preserving the amount of catalyst prior to CNT growth by reducing the catalyst diffusion time. The catalyst lifetime is extended from half an hour to one hour on a patterned Al thin film and a VACNT height of 106 mum, about twenty fold of that reported in the literature, was attained. Secondly, a diffusion barrier layer strategy is employed for a reduction of catalyst diffusion into the substrate materials. Enhancement of VACNT growth on Cu substrates was achieved by adopting a conformal Al2O 3 diffusion barrier layer fabricated by a specially designed atomic layer deposition (ALD) system. Lastly, a novel catalyst glancing angle deposition (GLAD) strategy is performed to manipulate the morphology of a relatively thick catalyst on metal substrates with physical surface heterogeneity, aiming to obtain uniform and dense catalyst nanoparticles after dewetting in the pretreatment process for enhanced VACNT growth. We are able to control the VACNT growth conditions on metal substrates in terms of their distribution, heights and alignments. Catalyst loss is controlled by the catalyst diffusion time and catalyst diffusion coefficients. A shorter catalyst diffusion time and smaller diffusion coefficient enhance VACNT growth on metals due to reduced catalyst loss during the pretreatment process. The dewetting behaviors of the thin film catalysts are influenced by the physical surface heterogeneity of the substrates which leads to non-uniform growth of VACNTs. The GLAD process facilitates the deposition of a relatively thick catalyst layer for the creation of dense and uniform catalyst nanoparticles. Applications of VACNT-metal structures in TIMs and microelectrodes are demonstrated. The VACNT-TIMs fabricated on Al alloy substrates have a typical thermal contact resistivity of 17.1 mm2˙K/W and their effective application in high-brightness LED thermal management was demonstrated. Electrochemical characterization was carried out on VACNT microelectrodes for the development of high resolution retinal prostheses and a satisfactory electrochemical property was again demonstrated.

Factors influencing epitaxial growth of three-dimensional Ge quantum dot crystals on pit-patterned Si substrate.

PubMed

Ma, Y J; Zhong, Z; Yang, X J; Fan, Y L; Jiang, Z M

2013-01-11

We investigated the molecular beam epitaxy growth of three-dimensional (3D) Ge quantum dot crystals (QDCs) on periodically pit-patterned Si substrates. A series of factors influencing the growth of QDCs were investigated in detail and the optimized growth conditions were found. The growth of the Si buffer layer and the first quantum dot (QD) layer play a key role in the growth of QDCs. The pit facet inclination angle decreased with increasing buffer layer thickness, and its optimized value was found to be around 21°, ensuring that all the QDs in the first layer nucleate within the pits. A large Ge deposition amount in the first QD layer favors strain build-up by QDs, size uniformity of QDs and hence periodicity of the strain distribution; a thin Si spacer layer favors strain correlation along the growth direction; both effects contribute to the vertical ordering of the QDCs. Results obtained by atomic force microscopy and cross-sectional transmission electron microscopy showed that 3D ordering was achieved in the Ge QDCs with the highest ever areal dot density of 1.2 × 10(10) cm(-2), and that the lateral and the vertical interdot spacing were ~10 and ~2.5 nm, respectively.

Antimicrobial nano-silver non-woven polyethylene terephthalate fabric via an atmospheric pressure plasma deposition process

PubMed Central

Deng, Xiaolong; Yu Nikiforov, Anton; Coenye, Tom; Cools, Pieter; Aziz, Gaelle; Morent, Rino; De Geyter, Nathalie; Leys, Christophe

2015-01-01

An antimicrobial nano-silver non-woven polyethylene terephthalate (PET) fabric has been prepared in a three step process. The fabrics were first pretreated by depositing a layer of organosilicon thin film using an atmospheric pressure plasma system, then silver nano-particles (AgNPs) were incorporated into the fabrics by a dipping-dry process, and finally the nano-particles were covered by a second organosilicon layer of 10-50 nm, which acts as a barrier layer. Different surface characterization techniques like SEM and XPS have been implemented to study the morphology and the chemical composition of the nano-silver fabrics. Based on these techniques, a uniform immobilization of AgNPs in the PET matrix has been observed. The antimicrobial activity of the treated fabrics has also been tested using P. aeruginosa, S. aureus and C. albicans. It reveals that the thickness of the barrier layer has a strong effect on the bacterial reduction of the fabrics. The durability and stability of the AgNPs on the fabrics has also been investigated in a washing process. By doing so, it is confirmed that the barrier layer can effectively prevent the release of AgNPs and that the thickness of the barrier layer is an important parameter to control the silver ions release. PMID:25951432

Ceramic Composite Thin Films

NASA Technical Reports Server (NTRS)

Dikin, Dmitriy A. (Inventor); Nguyen, SonBinh T. (Inventor); Ruoff, Rodney S. (Inventor); Stankovich, Sasha (Inventor)

2013-01-01

A ceramic composite thin film or layer includes individual graphene oxide and/or electrically conductive graphene sheets dispersed in a ceramic (e.g. silica) matrix. The thin film or layer can be electrically conductive film or layer depending the amount of graphene sheets present. The composite films or layers are transparent, chemically inert and compatible with both glass and hydrophilic SiOx/silicon substrates. The composite film or layer can be produced by making a suspension of graphene oxide sheet fragments, introducing a silica-precursor or silica to the suspension to form a sol, depositing the sol on a substrate as thin film or layer, at least partially reducing the graphene oxide sheets to conductive graphene sheets, and thermally consolidating the thin film or layer to form a silica matrix in which the graphene oxide and/or graphene sheets are dispersed.

Barium titanate nanocrystals and nanocrystal thin films: Synthesis, ferroelectricity, and dielectric properties

NASA Astrophysics Data System (ADS)

Huang, Limin; Chen, Zhuoying; Wilson, James D.; Banerjee, Sarbajit; Robinson, Richard D.; Herman, Irving P.; Laibowitz, Robert; O'Brien, Stephen

2006-08-01

Advanced applications for high k dielectric and ferroelectric materials in the electronics industry continues to demand an understanding of the underlying physics in decreasing dimensions into the nanoscale. We report the synthesis, processing, and electrical characterization of thin (<100nm thick) nanostructured thin films of barium titanate (BaTiO3) built from uniform nanoparticles (<20nm in diameter). We introduce a form of processing as a step toward the ability to prepare textured films based on assembly of nanoparticles. Essential to this approach is an understanding of the nanoparticle as a building block, combined with an ability to integrate them into thin films that have uniform and characteristic electrical properties. Our method offers a versatile means of preparing BaTiO3 nanocrystals, which can be used as a basis for micropatterned or continuous BaTiO3 nanocrystal thin films. We observe the BaTiO3 nanocrystals crystallize with evidence of tetragonality. We investigated the preparation of well-isolated BaTiO3 nanocrystals smaller than 10nm with control over aggregation and crystal densities on various substrates such as Si, Si /SiO2, Si3N4/Si, and Pt-coated Si substrates. BaTiO3 nanocrystal thin films were then prepared, resulting in films with a uniform nanocrystalline grain texture. Electric field dependent polarization measurements show spontaneous polarization and hysteresis, indicating ferroelectric behavior for the BaTiO3 nanocrystalline films with grain sizes in the range of 10-30nm. Dielectric measurements of the films show dielectic constants in the range of 85-90 over the 1KHz -100KHz, with low loss. We present nanocrystals as initial building blocks for the preparation of thin films which exhibit highly uniform nanostructured texture and grain sizes.

Thin-layer voltammetry of soluble species on screen-printed electrodes: proof of concept.

PubMed

Botasini, S; Martí, A C; Méndez, E

2016-10-17

Thin-layer diffusion conditions were accomplished on screen-printed electrodes by placing a controlled-weight onto the cast solution and allowing for its natural spreading. The restricted diffusive conditions were assessed by cyclic voltammetry at low voltage scan rates and electrochemical impedance spectroscopy. The relationship between the weight exerted over the drop and the thin-layer thickness achieved was determined, in such a way that the simple experimental set-up designed for this work could be developed into a commercial device with variable control of the thin-layer conditions. The experimental results obtained resemble those reported for the voltammetric features of electroactive soluble species employing electrodes modified with carbon nanotubes or graphene layers, suggesting that the attainment of the benefits reported for these nanomaterials could be done simply by forcing the solution to spread over the screen-printed electrodic system to form a thin layer solution. The advantages of thin-layer voltammetry in the kinetic characterization of quasi-reversible and irreversible processes are highlighted.

A model for thin layer formation by delayed particle settling at sharp density gradients

NASA Astrophysics Data System (ADS)

Prairie, Jennifer C.; White, Brian L.

2017-02-01

Thin layers - regions where plankton or particles accumulate vertically on scales of a few meters or less - are common in coastal waters, and have important implications for both trophic dynamics and carbon cycling. These features can form by a variety of biological and physical mechanisms, including localized growth, shear-thinning, and directed swimming. An additional mechanism may result in the formation of thin layers of marine aggregates, which have been shown to decrease their settling velocity when passing through sharp density gradients, a behavior termed delayed settling. Here, we apply a simple vertical advection-diffusion model to predict the properties of aggregate thin layers formed by this process. We assume a constant vertical flux of particles from the surface, which is parameterized by observations from laboratory experiments with marine aggregates. The formation, maintenance, and shape of the layers are described in relation to non-dimensional numbers that depend on environmental conditions and particle settling properties. In particular, model results demonstrate layer intensity and sharpness both increase with higher Péclet number (Pe), that is, under conditions with weaker mixing relative to layer formation. Similarly, more intense and sharper layers are found when the delayed settling behavior of aggregates is characterized by a lower velocity minimum. The model also predicts layers that are vertically asymmetric and highly "peaky" when compared with a Gaussian distribution, features often seen in thin layers in natural environments. Lastly, by comparing model predictions with observations of thin layers in the field, we are able to gain some insight into the applicability of delayed settling as a thin layer formation mechanism in different environmental conditions.

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Room temperature rubbing for few-layer two-dimensional thin flakes directly on flexible polymer substrates

PubMed Central

Yu, Yan; Jiang, Shenglin; Zhou, Wenli; Miao, Xiangshui; Zeng, Yike; Zhang, Guangzu; Liu, Sisi

2013-01-01

The functional layers of few-layer two-dimensional (2-D) thin flakes on flexible polymers for stretchable applications have attracted much interest. However, most fabrication methods are “indirect” processes that require transfer steps. Moreover, previously reported “transfer-free” methods are only suitable for graphene and not for other few-layer 2-D thin flakes. Here, a friction based room temperature rubbing method is proposed for fabricating different types of few-layer 2-D thin flakes (graphene, hexagonal boron nitride (h-BN), molybdenum disulphide (MoS2), and tungsten disulphide (WS2)) on flexible polymer substrates. Commercial 2-D raw materials (graphite, h-BN, MoS2, and WS2) that contain thousands of atom layers were used. After several minutes, different types of few-layer 2-D thin flakes were fabricated directly on the flexible polymer substrates by rubbing procedures at room temperature and without any transfer step. These few-layer 2-D thin flakes strongly adhere to the flexible polymer substrates. This strong adhesion is beneficial for future applications. PMID:24045289

Polymer thin film as coating layer to prevent corrosion of metal/metal oxide film

NASA Astrophysics Data System (ADS)

Sarkar, Suman; Kundu, Sarathi

2018-04-01

Thin film of polymer is used as coating layer and the corrosion of metal/metal oxide layer is studied with the variation of the thickness of the coating layer. The thin layer of polystyrene is fabricated using spin coating method on copper oxide (CuO) film which is deposited on glass substrate using DC magnetron sputtering technique. Thickness of the polystyrene and the CuO layers are determined using X-ray reflectivity (XRR) technique. CuO thin films coated with the polystyrene layer are exposed to acetic acid (2.5 v/v% aqueous CH3COOH solution) environments and are subsequently analyzed using UV-Vis spectroscopy and atomic force microscopy (AFM). Surface morphology of the film before and after interaction with the acidic environment is determined using AFM. Results obtained from the XRR and UV-Vis spectroscopy confirm that the thin film of polystyrene acts as an anticorrosion coating layer and the strength of the coating depends upon the polymer layer thickness at a constant acid concentration.

Scalable bonding of nanofibrous polytetrafluoroethylene (PTFE) membranes on microstructures

NASA Astrophysics Data System (ADS)

Mortazavi, Mehdi; Fazeli, Abdolreza; Moghaddam, Saeed

2018-01-01

Expanded polytetrafluoroethylene (ePTFE) nanofibrous membranes exhibit high porosity (80%-90%), high gas permeability, chemical inertness, and superhydrophobicity, which makes them a suitable choice in many demanding fields including industrial filtration, medical implants, bio-/nano- sensors/actuators and microanalysis (i.e. lab-on-a-chip). However, one of the major challenges that inhibit implementation of such membranes is their inability to bond to other materials due to their intrinsic low surface energy and chemical inertness. Prior attempts to improve adhesion of ePTFE membranes to other surfaces involved surface chemical treatments which have not been successful due to degradation of the mechanical integrity and the breakthrough pressure of the membrane. Here, we report a simple and scalable method of bonding ePTFE membranes to different surfaces via the introduction of an intermediate adhesive layer. While a variety of adhesives can be used with this technique, the highest bonding performance is obtained for adhesives that have moderate contact angles with the substrate and low contact angles with the membrane. A thin layer of an adhesive can be uniformly applied onto micro-patterned substrates with feature sizes down to 5 µm using a roll-coating process. Membrane-based microchannel and micropillar devices with burst pressures of up to 200 kPa have been successfully fabricated and tested. A thin layer of the membrane remains attached to the substrate after debonding, suggesting that mechanical interlocking through nanofiber engagement is the main mechanism of adhesion.

Nonenzymatic detection of glucose using BaCuO2 thin layer

NASA Astrophysics Data System (ADS)

Ito, Takeshi; Asada, Tsuyoshi; Asai, Naoto; Shimizu, Tomohiro; Shingubara, Shoso

2017-01-01

A BaCuO2 thin layer was deposited on a glassy carbon electrode and used for the direct oxidation of glucose. The crystalline, electrochemical, and physicochemical properties that depend on the deposition temperature and deposition time were studied. X-ray diffraction (XRD) analysis showed that the thin layer was amorphous even at 400 °C. The current density of the glucose oxidation using the thin layer deposited at 200 °C was higher than those at other deposition temperatures. Under this condition, the current density increased with the glucose concentration and deposition time. These results indicate that a BaCuO2 thin layer has potential for measuring the blood glucose level without enzymes.

Methods for making thin layers of crystalline materials

DOEpatents

Lagally, Max G; Paskiewicz, Deborah M; Tanto, Boy

2013-07-23

Methods for making growth templates for the epitaxial growth of compound semiconductors and other materials are provided. The growth templates are thin layers of single-crystalline materials that are themselves grown epitaxially on a substrate that includes a thin layer of sacrificial material. The thin layer of sacrificial material, which creates a coherent strain in the single-crystalline material as it is grown thereon, includes one or more suspended sections and one or more supported sections.

1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel-Processed Insulator for Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor.

PubMed

Lee, Ke-Jing; Chang, Yu-Chi; Lee, Cheng-Jung; Wang, Li-Wen; Wang, Yeong-Her

2017-12-09

A one-transistor and one-resistor (1T1R) architecture with a resistive random access memory (RRAM) cell connected to an organic thin-film transistor (OTFT) device is successfully demonstrated to avoid the cross-talk issues of only one RRAM cell. The OTFT device, which uses barium zirconate nickelate (BZN) as a dielectric layer, exhibits favorable electrical properties, such as a high field-effect mobility of 5 cm²/Vs, low threshold voltage of -1.1 V, and low leakage current of 10 -12 A, for a driver in the 1T1R operation scheme. The 1T1R architecture with a TiO₂-based RRAM cell connected with a BZN OTFT device indicates a low operation current (10 μA) and reliable data retention (over ten years). This favorable performance of the 1T1R device can be attributed to the additional barrier heights introduced by using Ni (II) acetylacetone as a substitute for acetylacetone, and the relatively low leakage current of a BZN dielectric layer. The proposed 1T1R device with low leakage current OTFT and excellent uniform resistance distribution of RRAM exhibits a good potential for use in practical low-power electronic applications.

The Control of Anisotropic Transport in Manganites by Stripy Domains

NASA Astrophysics Data System (ADS)

Ju, Changcheng; Lu, Xiaomei; Chu, Yinghao

2014-03-01

Epitaxial thin film acts as a significant tool to investigate novel phenomena of complex oxide systems. Extrinsic constraint1 of uniform or certain designed buffer layer strain could be easily implanted to these materials. However, the strain distribution might be quite complicated by involving micro- or nano-lattice distortions which could partially relax the strain and determine the complex phase diagrams of thin film, meanwhile introducing structural and physical inhomogeneities. In this work , we report 71° striped ferroelectric domains created in BFO can also epitaxially lock the perovskite manganites leading to the emerge of ordered structural domain. LSMO/BFO hetero-epitaxial samples are deposited by PLD. The 71° periodic striped domains and coherent growth are demonstrated by PFM and X-ray analysis. Plan-view TEM and X-ray RSM have been used to confirm the epitaxial relationships of the functional layers and IP lattice constant. Both the simulation and structural analysis demonstrate we can create a periodic ordered stripe structural domain in LSMO. And this will leave an anisotropic distribution of structural domain walls which makes it possible to capture the anisotropic tunneling for strong electron-lattice coupling in manganites. Temperature-dependent resistivity measurements reveal a substantial anisotropic resistivities and a remarkable shift of the MI transition between the perpendicular and parallel to the stripe domain directions.

Cavity formation and surface modeling of laser milling process under a thin-flowing water layer

NASA Astrophysics Data System (ADS)

Tangwarodomnukun, Viboon

2016-11-01

Laser milling process normally involves a number of laser scans over a workpiece to selectively remove the material and then to form cavities with shape and dimensions required. However, this process adversely causes a heat accumulation in work material, which can in turn damage the laser-milled area and vicinity in terms of recast deposition and change of material properties. Laser milling process performing in a thin-flowing water layer is a promising method that can overcome such damage. With the use of this technique, water can flush away the cut debris and at the same time cool the workpiece during the ablation. To understand the potential of this technique for milling application, the effects of process parameters on cavity dimensions and surface roughness were experimentally examined in this study. Titanium sheet was used as a workpiece to be milled by a nanosecond pulse laser under different water flow velocities. A smooth and uniform cut feature can be obtained when the metal was ablated under the high laser pulse frequency and high water flow velocity. Furthermore, a surface model based on the energy balance was developed in this study to predict the cavity profile and surface roughness. By comparing to the experiments, the predicted profiles had a good agreement with the measured ones.

Comparison of the structure, crystallography and composition of eggshells of the guinea fowl and graylag goose.

PubMed

Pérez-Huerta, Alberto; Dauphin, Yannicke

2016-02-01

The structure and composition of the eggshells of two commercial species (guinea fowl and greylag goose) have been studied. Thin sections and scanning electron microcopy show the similarity of the overall structure, but the relative thickness of the layers differs in these two taxa. Atomic force microscopy shows that the different layers are composed of rounded, heterogeneous granules, the diameter of which is between 50 and 100 nm, with a thin cortex. Infrared data and thermogravimetric analyses show that both eggshells are made of calcite, but differing on the quality and quantity when the organic component is considered. Chemical maps show that chemical element distribution is not uniform within a sample, and differs between the species, but with low magnesium content. Electron back scattered diffraction confirms the eggshells are calcite, but the microtexture strongly differs between the two species. Based on the chemical-structural differences, a species-specific biological control on the biomineralization is found, despite the rapid formation of an eggshell. Overall results indicate that to estimate the quality of eggshells, such as resistance to breakage, is not a straightforward process because of the high complexity of avian eggshell biomineralization. Copyright © 2015 Elsevier GmbH. All rights reserved.

Preparation and characterization of flexible asymmetric supercapacitors based on transition-metal-oxide nanowire/single-walled carbon nanotube hybrid thin-film electrodes.

PubMed

Chen, Po-Chiang; Shen, Guozhen; Shi, Yi; Chen, Haitian; Zhou, Chongwu

2010-08-24

In the work described in this paper, we have successfully fabricated flexible asymmetric supercapacitors (ASCs) based on transition-metal-oxide nanowire/single-walled carbon nanotube (SWNT) hybrid thin-film electrodes. These hybrid nanostructured films, with advantages of mechanical flexibility, uniform layered structures, and mesoporous surface morphology, were produced by using a filtration method. Here, manganese dioxide nanowire/SWNT hybrid films worked as the positive electrode, and indium oxide nanowire/SWNT hybrid films served as the negative electrode in a designed ASC. In our design, charges can be stored not only via electrochemical double-layer capacitance from SWNT films but also through a reversible faradic process from transition-metal-oxide nanowires. In addition, to obtain stable electrochemical behavior during charging/discharging cycles in a 2 V potential window, the mass balance between two electrodes has been optimized. Our optimized hybrid nanostructured ASCs exhibited a superior device performance with specific capacitance of 184 F/g, energy density of 25.5 Wh/kg, and columbic efficiency of approximately 90%. In addition, our ASCs exhibited a power density of 50.3 kW/kg, which is 10-fold higher than obtained in early reported ASC work. The high-performance hybrid nanostructured ASCs can find applications in conformal electrics, portable electronics, and electrical vehicles.

Influence of silicon oxide on the performance of TiN bottom electrode in phase change memory

NASA Astrophysics Data System (ADS)

Gao, Dan; Liu, Bo; Xu, Zhen; Wang, Heng; Xia, Yangyang; Wang, Lei; Zhu, Nanfei; Li, Ying; Zhan, Yipeng; Song, Zhitang; Feng, Songlin

2016-10-01

The stability of TiN which is the preferred bottom electrode contact (BEC) of phase change memory (PCM) due to its low thermal conductivity and suitable electrical conductivity, is very essential to the reliability of PCM devices. In this work, in order to investigate the effect of high aspect ratio process (HARP) SiO2 on the performance of TiN, both TiN/SiO2, TiN/SiN thin films and TiN BEC device structures are analyzed. By combining transmission electron microscopy (TEM) and energy dispersive X-ray spectroscopy (EDS), we found that the TiN would be oxidized after the deposition of HARP SiO2 and there exist a thin ( 4 nm) oxidation interfacial layer between TiN and SiO2. Electrical measurements were performed on the 1R PCM test-key die with 7 nm and 10 nm BEC-only cells. The statistical initial resistances of BEC have wide distribution and it is confirmed that the non-uniform oxidation of TiN BEC affects the astringency of the resistance of TiN BEC. The experimental results help to optimize the process of TiN BEC, and SiN is recommended as a better choice as the linear layer.

A Structurally Specialized Uniform Wall Layer is Essential for Constructing Wall Ingrowth Papillae in Transfer Cells

PubMed Central

Xia, Xue; Zhang, Hui-Ming; Offler, Christina E.; Patrick, John W.

2017-01-01

Transfer cells are characterized by wall labyrinths with either a flange or reticulate architecture. A literature survey established that reticulate wall ingrowth papillae ubiquitously arise from a modified component of their wall labyrinth, termed the uniform wall layer; a structure absent from flange transfer cells. This finding sparked an investigation of the deposition characteristics and role of the uniform wall layer using a Vicia faba cotyledon culture system. On transfer of cotyledons to culture, their adaxial epidermal cells spontaneously trans-differentiate to a reticulate architecture comparable to their abaxial epidermal transfer cell counterparts formed in planta. Uniform wall layer construction commenced once adaxial epidermal cell expansion had ceased to overlay the original outer periclinal wall on its inner surface. In contrast to the dense ring-like lattice of cellulose microfibrils in the original primary wall, the uniform wall layer was characterized by a sparsely dispersed array of linear cellulose microfibrils. A re-modeled cortical microtubule array exerted no influence on uniform wall layer formation or on its cellulose microfibril organization. Surprisingly, formation of the uniform wall layer was not dependent upon depositing a cellulose scaffold. In contrast, uniform wall cellulose microfibrils were essential precursors for constructing wall ingrowth papillae. On converging to form wall ingrowth papillae, the cellulose microfibril diameters increased 3-fold. This event correlated with up-regulated differential, and transfer-cell specific, expression of VfCesA3B while transcript levels of other cellulose biosynthetic-related genes linked with primary wall construction were substantially down-regulated. PMID:29259611

A Structurally Specialized Uniform Wall Layer is Essential for Constructing Wall Ingrowth Papillae in Transfer Cells.

PubMed

Xia, Xue; Zhang, Hui-Ming; Offler, Christina E; Patrick, John W

2017-01-01

Transfer cells are characterized by wall labyrinths with either a flange or reticulate architecture. A literature survey established that reticulate wall ingrowth papillae ubiquitously arise from a modified component of their wall labyrinth, termed the uniform wall layer; a structure absent from flange transfer cells. This finding sparked an investigation of the deposition characteristics and role of the uniform wall layer using a Vicia faba cotyledon culture system. On transfer of cotyledons to culture, their adaxial epidermal cells spontaneously trans -differentiate to a reticulate architecture comparable to their abaxial epidermal transfer cell counterparts formed in planta . Uniform wall layer construction commenced once adaxial epidermal cell expansion had ceased to overlay the original outer periclinal wall on its inner surface. In contrast to the dense ring-like lattice of cellulose microfibrils in the original primary wall, the uniform wall layer was characterized by a sparsely dispersed array of linear cellulose microfibrils. A re-modeled cortical microtubule array exerted no influence on uniform wall layer formation or on its cellulose microfibril organization. Surprisingly, formation of the uniform wall layer was not dependent upon depositing a cellulose scaffold. In contrast, uniform wall cellulose microfibrils were essential precursors for constructing wall ingrowth papillae. On converging to form wall ingrowth papillae, the cellulose microfibril diameters increased 3-fold. This event correlated with up-regulated differential, and transfer-cell specific, expression of VfCesA3B while transcript levels of other cellulose biosynthetic-related genes linked with primary wall construction were substantially down-regulated.

Convergent ablation measurements with gas-filled rugby hohlraum on OMEGA

NASA Astrophysics Data System (ADS)

Casner, A.; Jalinaud, T.; Galmiche, D.

2016-03-01

Convergent ablation experiments with gas-filled rugby hohlraum were performed for the first time on the OMEGA laser facility. A time resolved 1D streaked radiography of capsule implosion is acquired in the direction perpendicular to hohlraum axis, whereas a 2D gated radiography is acquired at the same time along the hohlraum axis on a x-ray framing camera. The implosion trajectory has been measured for various kinds of uniformly doped ablators, including germanium-doped and silicon-doped polymers (CH), at two different doping fraction (2% and 4% at.). Our experiments aimed also at measuring the implosion performance of laminated capsules. A laminated ablator is constituted by thin alternate layers of un-doped and doped CH. It has been previously shown in planar geometry that laminated ablators could mitigate Rayleigh Taylor growth at ablation front. Our results confirm that the implosion of a capsule constituted with a uniform or laminated ablator behaves similarly, in accordance with post-shot simulations performed with the CEA hydrocode FCI2.

Wafer-scale production of highly uniform two-dimensional MoS2 by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kim, TaeWan; Mun, Jihun; Park, Hyeji; Joung, DaeHwa; Diware, Mangesh; Won, Chegal; Park, Jonghoo; Jeong, Soo-Hwan; Kang, Sang-Woo

2017-05-01

Semiconducting two-dimensional (2D) materials, particularly extremely thin molybdenum disulfide (MoS2) films, are attracting considerable attention from academia and industry owing to their distinctive optical and electrical properties. Here, we present the direct growth of a MoS2 monolayer with unprecedented spatial and structural uniformity across an entire 8 inch SiO2/Si wafer. The influences of growth pressure, ambient gases (Ar, H2), and S/Mo molar flow ratio on the MoS2 layered growth were explored by considering the domain size, nucleation sites, morphology, and impurity incorporation. Monolayer MoS2-based field effect transistors achieve an electron mobility of 0.47 cm2 V-1 s-1 and on/off current ratio of 5.4 × 104. This work demonstrates the potential for reliable wafer-scale production of 2D MoS2 for practical applications in next-generation electronic and optical devices.

Ignition of deuterium-trtium fuel targets

DOEpatents

Musinski, Donald L.; Mruzek, Michael T.

1991-01-01

A method of igniting a deuterium-tritium ICF fuel target to obtain fuel burn in which the fuel target initially includes a hollow spherical shell having a frozen layer of DT material at substantially uniform thickness and cryogenic temperature around the interior surface of the shell. The target is permitted to free-fall through a target chamber having walls heated by successive target ignitions, so that the target is uniformly heated during free-fall to at least partially melt the frozen fuel layer and form a liquid single-phase layer or a mixed liquid/solid bi-phase layer of substantially uniform thickness around the interior shell surface. The falling target is then illuminated from exteriorly of the chamber while the fuel layer is at substantially uniformly single or bi-phase so as to ignite the fuel layer and release energy therefrom.

Ignition of deuterium-tritium fuel targets

DOEpatents

Musinski, D.L.; Mruzek, M.T.

1991-08-27

Disclosed is a method of igniting a deuterium-tritium ICF fuel target to obtain fuel burn in which the fuel target initially includes a hollow spherical shell having a frozen layer of DT material at substantially uniform thickness and cryogenic temperature around the interior surface of the shell. The target is permitted to free-fall through a target chamber having walls heated by successive target ignitions, so that the target is uniformly heated during free-fall to at least partially melt the frozen fuel layer and form a liquid single-phase layer or a mixed liquid/solid bi-phase layer of substantially uniform thickness around the interior shell surface. The falling target is then illuminated from exteriorly of the chamber while the fuel layer is at substantially uniformly single or bi-phase so as to ignite the fuel layer and release energy therefrom. 5 figures.

Improvement in temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films using Ba(Mg1/3Ta2/3)O3 buffer layer

NASA Astrophysics Data System (ADS)

Wu, Zhi; Zhou, Jing; Chen, Wen; Shen, Jie; Yang, Huimin; Zhang, Shisai; Liu, Yueli

2016-12-01

In this paper, Pb(Zr0.52Ti0.48)O3 (PZT) thin films were prepared via sol-gel method. The effects of Ba(Mg1/3Ta2/3)O3 (BMT) buffer layer on the temperature dependence and dielectric tunability properties of PZT thin films were studied. As the thickness of BMT buffer layer increases, the tan δ and tunability of PZT thin films decrease while tunability still maintains above 10%. This result shows that BMT buffer layer can improve the dielectric tunability properties of PZT thin films. Furthermore, the temperature coefficient of the dielectric constant decreases from 2333.4 to 906.9 ppm/°C with the thickness of BMT buffer layer increasing in the range from 25 to 205 °C, indicating that BMT buffer layer can improve the temperature stability of PZT thin films. Therefore, BMT buffer layer plays a critical role in improving temperature dependence and dielectric tunability properties of PbZr0.52Ti0.48O3 thin films.

Breakthrough to Non-Vacuum Deposition of Single-Crystal, Ultra-Thin, Homogeneous Nanoparticle Layers: A Better Alternative to Chemical Bath Deposition and Atomic Layer Deposition

PubMed Central

Liao, Yu-Kuang; Liu, Yung-Tsung; Hsieh, Dan-Hua; Shen, Tien-Lin; Hsieh, Ming-Yang; Tzou, An-Jye; Chen, Shih-Chen; Tsai, Yu-Lin; Lin, Wei-Sheng; Chan, Sheng-Wen; Shen, Yen-Ping; Cheng, Shun-Jen; Chen, Chyong-Hua; Wu, Kaung-Hsiung; Chen, Hao-Ming; Kuo, Shou-Yi; Charlton, Martin D. B.; Hsieh, Tung-Po; Kuo, Hao-Chung

2017-01-01

Most thin-film techniques require a multiple vacuum process, and cannot produce high-coverage continuous thin films with the thickness of a few nanometers on rough surfaces. We present a new ”paradigm shift” non-vacuum process to deposit high-quality, ultra-thin, single-crystal layers of coalesced sulfide nanoparticles (NPs) with controllable thickness down to a few nanometers, based on thermal decomposition. This provides high-coverage, homogeneous thickness, and large-area deposition over a rough surface, with little material loss or liquid chemical waste, and deposition rates of 10 nm/min. This technique can potentially replace conventional thin-film deposition methods, such as atomic layer deposition (ALD) and chemical bath deposition (CBD) as used by the Cu(In,Ga)Se2 (CIGS) thin-film solar cell industry for decades. We demonstrate 32% improvement of CIGS thin-film solar cell efficiency in comparison to reference devices prepared by conventional CBD deposition method by depositing the ZnS NPs buffer layer using the new process. The new ZnS NPs layer allows reduction of an intrinsic ZnO layer, which can lead to severe shunt leakage in case of a CBD buffer layer. This leads to a 65% relative efficiency increase. PMID:28383488

Layer-by-Layer Assembly of a pH-Responsive and Electrochromic Thin Film

ERIC Educational Resources Information Center

Schmidt, Daniel J.; Pridgen, Eric M.; Hammond, Paula T.; Love, J. Christopher

2010-01-01

This article summarizes an experiment on thin-film fabrication with layer-by-layer assembly that is appropriate for undergraduate laboratory courses. The purpose of this experiment is to teach students about self-assembly in the context of thin films and to expose students to the concepts of functional polymeric coatings. Students dip coat…

Anatomy and dynamics of a floodplain, Powder River, Montana, U.S.A.

USGS Publications Warehouse

Pizzuto, J.E.; Moody, J.A.; Meade, R.H.

2008-01-01

Centimeter-scale measurements on several Powder River floodplains provide insights into the nature of overbank depositional processes that created the floodplains; during a 20-year period after a major flood in 1978. Rising stages initially entered across a sill at the downriver end of the floodplains. Later, as stages continued to rise, water entered the floodplains through distinct low saddles along natural levees. The annual maximum depth of water over the levee crest averaged 0.19 in from 1983 through 1996, and the estimated flow velocities were approximately 0.15 m s-1. Water ponded in the floodplain trough, a topographic low between the natural levee and the pre-flood riverbank, and mud settled as thin layers of nearly constant thickness. Mud layers alternated with sand layers, which were relatively thick near the channel. Together, these beds created a distinctive natural levee. In some locations, individual flood deposits began as a thin mud layer that gradually coarsened upwards to medium-grained sand. Coarsening-upwards sequences form initially as mud because only the uppermost layers of water in the channel supply the first overbank flows, which are rich in mud but starved of sand. At successively higher stages, fine sands and then medium sands increase in concentration in the floodwater and are deposited as fine- and medium-sand layers overlying the initial mud layer. Theoretical predictions from mathematical models of sediment transport by advection and diffusion indicate that these processes acting alone are unlikely to create the observed sand layers of nearly uniform thickness that extend across much of the floodplain. We infer that other transport processes, notably bedload transport, must be important along Powder River. Even with the centimeter-scale measurements of floodplain deposits, daily hydraulic data, and precise annual surface topographic surveys, we were unable to determine any clear correspondence between the gauged flow record of overbank floods and the depositional layers mapped in the floodplain. These results provide a detailed example of floodplain deposits and depositional processes that should prove useful for interpreting natural levee deposits in a variety of geologic settings. Copyright ?? 2008, SEPM (Society for Sedimentary Geology).

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures

NASA Astrophysics Data System (ADS)

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A.; Park, Jiwoong

2017-10-01

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides--which represent one- and three-atom-thick two-dimensional building blocks, respectively--have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Layer-by-layer assembly of two-dimensional materials into wafer-scale heterostructures.

PubMed

Kang, Kibum; Lee, Kan-Heng; Han, Yimo; Gao, Hui; Xie, Saien; Muller, David A; Park, Jiwoong

2017-10-12

High-performance semiconductor films with vertical compositions that are designed to atomic-scale precision provide the foundation for modern integrated circuitry and novel materials discovery. One approach to realizing such films is sequential layer-by-layer assembly, whereby atomically thin two-dimensional building blocks are vertically stacked, and held together by van der Waals interactions. With this approach, graphene and transition-metal dichalcogenides-which represent one- and three-atom-thick two-dimensional building blocks, respectively-have been used to realize previously inaccessible heterostructures with interesting physical properties. However, no large-scale assembly method exists at present that maintains the intrinsic properties of these two-dimensional building blocks while producing pristine interlayer interfaces, thus limiting the layer-by-layer assembly method to small-scale proof-of-concept demonstrations. Here we report the generation of wafer-scale semiconductor films with a very high level of spatial uniformity and pristine interfaces. The vertical composition and properties of these films are designed at the atomic scale using layer-by-layer assembly of two-dimensional building blocks under vacuum. We fabricate several large-scale, high-quality heterostructure films and devices, including superlattice films with vertical compositions designed layer-by-layer, batch-fabricated tunnel device arrays with resistances that can be tuned over four orders of magnitude, band-engineered heterostructure tunnel diodes, and millimetre-scale ultrathin membranes and windows. The stacked films are detachable, suspendable and compatible with water or plastic surfaces, which will enable their integration with advanced optical and mechanical systems.

Gyrotactic trapping: A numerical study

NASA Astrophysics Data System (ADS)

Ghorai, S.

2016-04-01

Gyrotactic trapping is a mechanism proposed by Durham et al. ["Disruption of vertical motility by shear triggers formation of thin Phytoplankton layers," Science 323, 1067-1070 (2009)] to explain the formation of thin phytoplankton layer just below the ocean surface. This mechanism is examined numerically using a rational model based on the generalized Taylor dispersion theory. The crucial role of sedimentation speed in the thin layer formation is demonstrated. The effects of variation in different parameters on the thin layer formation are also investigated.

[High performance thin-layer chromatography in specific blood diagnosis (author's transl)].

PubMed

Bernardelli, B; Masotti, G

1976-01-01

Furthering their research into the differentiation of various haemoglobins (both human and animal) with the use of thin layer chromatographic methods, the Authors have applied Kaiser's high performance thin layer chromatography (HPTLC) to the specific diagnosis of blood. Although the method was superior to ascending one-dimensional thin layer chromatography for its sensitivity, Rf reproducibility and much briefer migration times, it did not turn out to be suitable for application to the specific requirements of forensic haematology.

Thin-film metal coated insulation barrier in a Josephson tunnel junction. [Patent application

DOEpatents

Hawkins, G.A.; Clarke, J.

1975-10-31

A highly stable, durable, and reproducible Josephson tunnel junction consists of a thin-film electrode of a hard superconductor, a thin oxide insulation layer over the electrode constituting a Josephson tunnel junction barrier, a thin-film layer of stabilizing metal over the barrier, and a second thin-film hard superconductive electrode over the stabilizing film. The thin stabilizing metal film is made only thick enough to limit penetration of the electrode material through the insulation layer so as to prevent a superconductive short.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition.

PubMed

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-19

Dense and crack-free barium titanate (BaTiO₃, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film.

Implanted Silicon Resistor Layers for Efficient Terahertz Absorption

NASA Technical Reports Server (NTRS)

Chervenak, J. A.; Abrahams, J.; Allen, C. A.; Benford, D. J.; Henry, R.; Stevenson, T.; Wollack, E.; Moseley, S. H.

2005-01-01

Broadband absorption structures are an essential component of large format bolometer arrays for imaging GHz and THz radiation. We have measured electrical and optical properties of implanted silicon resistor layers designed to be suitable for these absorbers. Implanted resistors offer a low-film-stress, buried absorber that is robust to longterm aging, temperature, and subsequent metals processing. Such an absorber layer is readily integrated with superconducting integrated circuits and standard micromachining as demonstrated by the SCUBA II array built by ROE/NIST (1). We present a complete characterization of these layers, demonstrating frequency regimes in which different recipes will be suitable for absorbers. Single layer thin film coatings have been demonstrated as effective absorbers at certain wavelengths including semimetal (2,3), thin metal (4), and patterned metal films (5,6). Astronomical instrument examples include the SHARC II instrument is imaging the submillimeter band using passivated Bi semimetal films and the HAWC instrument for SOFIA, which employs ultrathin metal films to span 1-3 THz. Patterned metal films on spiderweb bolometers have also been proposed for broadband detection. In each case, the absorber structure matches the impedance of free space for optimal absorption in the detector configuration (typically 157 Ohms per square for high absorption with a single or 377 Ohms per square in a resonant cavity or quarter wave backshort). Resonant structures with -20% bandwidth coupled to bolometers are also under development; stacks of such structures may take advantage of instruments imaging over a wide band. Each technique may enable effective absorbers in imagers. However, thin films tend to age, degrade or change during further processing, can be difficult to reproduce, and often exhibit an intrinsic granularity that creates complicated frequency dependence at THz frequencies. Thick metal films are more robust but the requirement for patterning can limit their absorption at THz frequencies and their heat capacity can be high. patterned absorber structures that offer low heat capacity, absence of aging, and uniform, predictable behavior at THz frequencies. We have correlated DC electrical and THz optical measurements of a series of implanted layers and studied their frequency dependence of optical absorption from .3 to 10 THz at cryogenic temperatures. We have modeled the optical response to determine the suitability of the implanted silicon resistor as a function of resistance in the range 10 Ohms/sq to 300 Ohms/sq.

Performance enhancement in Sb doped Cu(InGa)Se2 thin film solar cell by e-beam evaporation

NASA Astrophysics Data System (ADS)

Chen, Jieyi; Shen, Honglie; Zhai, Zihao; Li, Yufang; Yi, Yunge

2018-03-01

To investigate the effects of Sb doping on the structural and electrical properties of Cu(InGa)Se2 (CIGS) thin films and solar cells, CIGS thin films, prepared by e-beam evaporation on soda-lime glass, were doped with lower and upper Sb layers in the precursor stacks respectively. Change of structure and introduction of stress were observed in the CIGS thin films with upper Sb layer in stack through XRD and Raman measurement. Both crystalline quality and compactness of CIGS thin films were improved by the doping of upper Sb layer in stack and the CIGS thin film showed an optimal structural property with 20 nm Sb layer. Movement of Fermi level of the surface of CIGS thin film after doping of upper Sb layer in stack and electrons transfer between Cu/Cu+ redox couple and CIGS thin films, which provided probability for the substitution of Sb for Cu sites at the surface of CIGS thin films, were proposed to explain the migration of Cu from the surface to the bulk of CIGS thin films. The larger barrier at the CIGS/CdS interface after doping of upper Sb layer in stack made contribution to the increase of VOC of CIGS solar cells. The efficiency of CIGS solar cell was improved from 3.3% to 7.2% after doping with 20 nm upper Sb. Compared to the CIGS solar cell with lower Sb layer in stack, in which an additional Cu2-xSe phase was found, the CIGS solar cell with upper Sb layer in stack possessed a higher efficiency.

System-based approach for an advanced drug delivery platform

NASA Astrophysics Data System (ADS)

Kulinsky, Lawrence; Xu, Han; Tsai, Han-Kuan A.; Madou, Marc

2006-03-01

Present study is looking at the problem of integrating drug delivery microcapsule, a bio-sensor, and a control mechanism into a biomedical drug delivery system. A wide range of medical practices from cancer therapy to gastroenterological treatments can benefit from such novel bio-system. Drug release in our drug delivery system is achieved by electrochemically actuating an array of polymeric valves on a set of drug reservoirs. The valves are bi-layer structures, made in the shape of a flap hinged on one side to a valve seat, and consisting of thin films of evaporated gold and electrochemically deposited polypyrrole (PPy). These thin PPy(DBS) bi-layer flaps cover access holes of underlying chambers micromachined in a silicon substrate. Chromium and polyimide layers are applied to implement "differential adhesion" to obtain a voltage induced deflection of the bilayer away from the drug reservoir. The Cr is an adhesion-promoting layer, which is used to strongly bind the gold layer down to the substrate, whereas the gold adheres weakly to polyimide. Drug actives (dry or wet) were pre-stored in the chambers and their release is achieved upon the application of a small bias (~ 1V). Negative voltage causes cation adsorption and volume change in PPy film. This translates into the bending of the PPy/Au bi-layer actuator and release of the drug from reservoirs. This design of the drug delivery module is miniaturized to the dimensions of 200μm valve diameter. Galvanostatic and potentiostatic PPy deposition methods were compared, and potentiostatic deposition method yields film of more uniform thickness. PPy deposition experiments with various pyrrole and NaDBS concentrations were also performed. Glucose biosensor based on glucose oxidase (GOx) embedded in the PPy matrix during elechtrochemical deposition was manufactured and successfully tested. Multiple-drug pulsatile release and continuous linear release patterns can be implemented by controlling the operation of an array of valves. Varying amounts of drugs, together with more complex controlling strategies would allow creation of more complex drug delivery patterns.

Design and Fabrication of High-Efficiency CMOS/CCD Imagers

NASA Technical Reports Server (NTRS)

Pain, Bedabrata

2007-01-01

An architecture for back-illuminated complementary metal oxide/semiconductor (CMOS) and charge-coupled-device (CCD) ultraviolet/visible/near infrared- light image sensors, and a method of fabrication to implement the architecture, are undergoing development. The architecture and method are expected to enable realization of the full potential of back-illuminated CMOS/CCD imagers to perform with high efficiency, high sensitivity, excellent angular response, and in-pixel signal processing. The architecture and method are compatible with next-generation CMOS dielectric-forming and metallization techniques, and the process flow of the method is compatible with process flows typical of the manufacture of very-large-scale integrated (VLSI) circuits. The architecture and method overcome all obstacles that have hitherto prevented high-yield, low-cost fabrication of back-illuminated CMOS/CCD imagers by use of standard VLSI fabrication tools and techniques. It is not possible to discuss the obstacles in detail within the space available for this article. Briefly, the obstacles are posed by the problems of generating light-absorbing layers having desired uniform and accurate thicknesses, passivation of surfaces, forming structures for efficient collection of charge carriers, and wafer-scale thinning (in contradistinction to diescale thinning). A basic element of the present architecture and method - the element that, more than any other, makes it possible to overcome the obstacles - is the use of an alternative starting material: Instead of starting with a conventional bulk-CMOS wafer that consists of a p-doped epitaxial silicon layer grown on a heavily-p-doped silicon substrate, one starts with a special silicon-on-insulator (SOI) wafer that consists of a thermal oxide buried between a lightly p- or n-doped, thick silicon layer and a device silicon layer of appropriate thickness and doping. The thick silicon layer is used as a handle: that is, as a mechanical support for the device silicon layer during micro-fabrication.

Evaluation of double-layer density modulated Si thin films as Li-ion battery anodes

NASA Astrophysics Data System (ADS)

Taha Demirkan, Muhammed; Yurukcu, Mesut; Dursun, Burcu; Demir-Cakan, Rezan; Karabacak, Tansel

2017-10-01

Double-layer density modulated silicon thin films which contain alternating low and high density Si film layers were fabricated by magnetron sputtering. Two different samples consisting of alternating layers of high-density/low-density and low-density/high-density Si thin film layers were investigated as anode electrodes in Li-ion batteries. Si thin film in which the terminating layer at the top is low density Si layer-quoted as low-density/high-density film (LD/HD)- exhibits better performance than Si thin film that has high density layer at the top, -quoted as high-density/low-density (HD/LD). A highly stabilized cycling performance with the specific charge capacities of 2000 mAh g-1 at the 150th cycle at C/2 current density, and 1200 mAh g-1 at the 240th cycle at 10 C current density were observed for the LD/HD Si anode in the presence of fluoroethylene carbonate (FEC) electrolyte additive.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, Xuanzhi; Coutts, Timothy J.; Sheldon, Peter; Rose, Douglas H.

1999-01-01

A photovoltaic device having a substrate, a layer of Cd.sub.2 SnO.sub.4 disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd.sub.2 SnO.sub.4, and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd.sub.2 SnO.sub.4 layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd.sub.2 SnO.sub.4, and depositing an electrically conductive film onto the thin film of semiconductor materials.

Delta-Doped Back-Illuminated CMOS Imaging Arrays: Progress and Prospects

NASA Technical Reports Server (NTRS)

Hoenk, Michael E.; Jones, Todd J.; Dickie, Matthew R.; Greer, Frank; Cunningham, Thomas J.; Blazejewski, Edward; Nikzad, Shouleh

2009-01-01

In this paper, we report the latest results on our development of delta-doped, thinned, back-illuminated CMOS imaging arrays. As with charge-coupled devices, thinning and back-illumination are essential to the development of high performance CMOS imaging arrays. Problems with back surface passivation have emerged as critical to the prospects for incorporating CMOS imaging arrays into high performance scientific instruments, just as they did for CCDs over twenty years ago. In the early 1990's, JPL developed delta-doped CCDs, in which low temperature molecular beam epitaxy was used to form an ideal passivation layer on the silicon back surface. Comprising only a few nanometers of highly-doped epitaxial silicon, delta-doping achieves the stability and uniformity that are essential for high performance imaging and spectroscopy. Delta-doped CCDs were shown to have high, stable, and uniform quantum efficiency across the entire spectral range from the extreme ultraviolet through the near infrared. JPL has recently bump-bonded thinned, delta-doped CMOS imaging arrays to a CMOS readout, and demonstrated imaging. Delta-doped CMOS devices exhibit the high quantum efficiency that has become the standard for scientific-grade CCDs. Together with new circuit designs for low-noise readout currently under development, delta-doping expands the potential scientific applications of CMOS imaging arrays, and brings within reach important new capabilities, such as fast, high-sensitivity imaging with parallel readout and real-time signal processing. It remains to demonstrate manufacturability of delta-doped CMOS imaging arrays. To that end, JPL has acquired a new silicon MBE and ancillary equipment for delta-doping wafers up to 200mm in diameter, and is now developing processes for high-throughput, high yield delta-doping of fully-processed wafers with CCD and CMOS imaging devices.

Amplitude various angles (AVA) phenomena in thin layer reservoir: Case study of various reservoirs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nurhandoko, Bagus Endar B., E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com; Rock Fluid Imaging Lab., Bandung; Susilowati, E-mail: bagusnur@bdg.centrin.net.id, E-mail: bagusnur@rock-fluid.com

2015-04-16

Amplitude various offset is widely used in petroleum exploration as well as in petroleum development field. Generally, phenomenon of amplitude in various angles assumes reservoir’s layer is quite thick. It also means that the wave is assumed as a very high frequency. But, in natural condition, the seismic wave is band limited and has quite low frequency. Therefore, topic about amplitude various angles in thin layer reservoir as well as low frequency assumption is important to be considered. Thin layer reservoir means the thickness of reservoir is about or less than quarter of wavelength. In this paper, I studied aboutmore » the reflection phenomena in elastic wave which considering interference from thin layer reservoir and transmission wave. I applied Zoeppritz equation for modeling reflected wave of top reservoir, reflected wave of bottom reservoir, and also transmission elastic wave of reservoir. Results show that the phenomena of AVA in thin layer reservoir are frequency dependent. Thin layer reservoir causes interference between reflected wave of top reservoir and reflected wave of bottom reservoir. These phenomena are frequently neglected, however, in real practices. Even though, the impact of inattention in interference phenomena caused by thin layer in AVA may cause inaccurate reservoir characterization. The relation between classes of AVA reservoir and reservoir’s character are different when effect of ones in thin reservoir and ones in thick reservoir are compared. In this paper, I present some AVA phenomena including its cross plot in various thin reservoir types based on some rock physics data of Indonesia.« less

Surface characterizations of oxides synthesized by successive ionic layer deposition

NASA Astrophysics Data System (ADS)

Gilbert, Thomas I.

Successive ionic layer deposition (SILD) is an aqueous technique for depositing thin oxide films on a surface in a layer-by-layer fashion through a series of chemical reactions. This dissertation examines empirical aspects of the SILD technique by characterizing thin oxide films synthesized on model planar supports and then extends the SILD technique to synthesize supported oxide nanostructures on three dimensional supports of interest to catalysis. Atomic force microscopy, x-ray photoelectron spectroscopy, and scanning electron microscopy provided insight into the SILD of zirconia, alumina, and barium oxide thin films on silicon wafers. The SILD conditions that most affected the surface morphology of the thin oxide films were the selection of aqueous metal salt precursors comprising the SILD solutions and the total number of SILD cycles. Recent studies suggest that a highly dispersed phase of barium oxide supported on alumina interacts differently with NO2 than a bulk-like phase of barium oxide SILD was used to synthesize disperse nanoislands or rafts of barium oxide on larger rafts of alumina supported on a silicon wafer. The SILD method was then extended to deposit barium oxide on an alumina powder support comprised of dense 150 nm spherical crystallites fused together into 1-2 pm particles. Equally weight loaded samples of barium oxide on the fused alumina powder were prepared by SILD and wet impregnation. The NO2 storage behavior of the barium oxide, evaluated by thermogravimetric analysis during NO2 temperature programmed desorption (TPD) experiments, provided insight into the dispersion of barium oxide that resulted from each of the loading techniques. The highly dispersed barium oxide rafts synthesized by SILD on fused alumina released NO2 at temperatures below 500°C during TPD. By comparison, the barium oxide loaded by wet impregnation showed a higher temperature desorption feature above 500°C indicative of bulk-like barium oxide nanoparticles. The NO2 weight loss curves were also used to calculate the relative percentages of BaO in the dispersed phase and bulk-like phase for each loading technique. The ability of SILD to synthesize highly disperse and uniform, conformal oxide coatings on three dimensional supports provides fundamental insight into the interactions between catalysts and supports.

Aseismic Slip of a Thin Slab Due to a Fluid Source

NASA Astrophysics Data System (ADS)

Aubin, P. W.; Viesca, R. C.

2017-12-01

We explore the effects of an increase of pore pressure on the frictional interface along the base of a thin slab. The thin slab approximation corresponds to a layer overriding a substrate in which variations along the layer's length occur over distances much greater than the layer thickness. We consider deformation that may be in-plane or anti-plane, but approximately uniform in depth, such that spatial variations of displacement (and hence, slip) occur only along one direction parallel to the interface. Such a thin-sheet model may well represent the deformation of landslides and glacial ice streams, and also serves as a first-pass for fault systems, which, while better represented by elastic half-spaces in frictional contact, nonetheless show qualitatively similar behavior. We consider that the friction coefficient at the layer's interface remains (approximately) constant, and that aseismic slip is initiated by a (line) source of fluid at constant pressure, with one-dimensional diffusion parallel to the interface. As posed, the problem yields a self-similar expansion of slip, whose extent grows proportionally to (α * t)^(1/2) (where α is the hydraulic diffusivity) and can either lag behind or outpace the fluid diffusion front. The problem is controlled by a single parameter, accounting for the friction coefficient and the initial (pre-injection) states of stress and pore pressure. The problem solution consists of the self-similar slip profile and the coefficient of proportionality for the crack-front motion. Within the problem parameter range, two end-member scenarios result: one in which the initial level of shear stress on the interface is close to the value of the pre-injection strength (critically stressed) or another in which fluid pressure is just enough to induce slip (marginally pressurized). For the critically stressed and marginally pressurized cases, the aseismic slip front lies far ahead or far behind, respectively, the fluid diffusion front. We find closed-form solutions for both end-members, and in the former case, via matched asymptotics. These solutions provide a basis to solve the general problem, which we also solve numerically for comparison. The solutions also provide a starting point for examining the progression of slip and locking following the shutoff of the fluid source.

Impact of a counter-rotating planetary rotation system on thin-film thickness and uniformity

DOE PAGES

Oliver, J. B.

2017-06-12

Planetary rotation systems incorporating forward- and counter-rotating planets are used as a means of increasing coating-system capacity for large oblong substrates. Comparisons of planetary motion for the two types of rotating systems are presented based on point tracking for multiple revolutions, as well as comparisons of quantitative thickness and uniformity. Counter-rotation system geometry is shown to result in differences in thin-film thickness relative to standard planetary rotation for precision optical coatings. As a result, this systematic error in thin-film thickness will reduce deposition yields for sensitive coating designs.

Computational and theoretical analysis of free surface flow in a thin liquid film under zero and normal gravity

NASA Technical Reports Server (NTRS)

Faghri, Amir; Swanson, Theodore D.

1988-01-01

The results of a numerical computation and theoretical analysis are presented for the flow of a thin liquid film in the presence and absence of a gravitational body force. Five different flow systems were used. Also presented are the governing equations and boundary conditions for the situation of a thin liquid emanating from a pressure vessel; traveling along a horizontal plate with a constant initial height and uniform initial velocity; and traveling radially along a horizontal disk with a constant initial height and uniform initial velocity.

Impact of a counter-rotating planetary rotation system on thin-film thickness and uniformity.

PubMed

Oliver, J B

2017-06-20

Planetary rotation systems incorporating forward- and counter-rotating planets are used as a means of increasing coating-system capacity for large oblong substrates. Comparisons of planetary motion for the two types of rotating systems are presented based on point tracking for multiple revolutions as well as comparisons of quantitative thickness and uniformity. Counter-rotation system geometry is shown to result in differences in thin-film thickness relative to standard planetary rotation for precision optical coatings. This systematic error in thin-film thickness will reduce deposition yields for sensitive coating designs.

Impact of a counter-rotating planetary rotation system on thin-film thickness and uniformity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Oliver, J. B.

Planetary rotation systems incorporating forward- and counter-rotating planets are used as a means of increasing coating-system capacity for large oblong substrates. Comparisons of planetary motion for the two types of rotating systems are presented based on point tracking for multiple revolutions, as well as comparisons of quantitative thickness and uniformity. Counter-rotation system geometry is shown to result in differences in thin-film thickness relative to standard planetary rotation for precision optical coatings. As a result, this systematic error in thin-film thickness will reduce deposition yields for sensitive coating designs.

Variation of microstructural and optical properties in SILAR grown ZnO thin films by thermal treatment.

PubMed

Valanarasu, S; Dhanasekaran, V; Chandramohan, R; Kulandaisamy, I; Sakthivelu, A; Mahalingam, T

2013-08-01

The influence of thermal treatment on the structural and morphological properties of the ZnO films deposited by double dip Successive ionic layer by adsorption reaction is presented. The effect of annealing temperature and time in air ambient is presented in detail. The deposited films were annealed from 200 to 400 degrees C in air and the structural properties were determined as a function of annealing temperature by XRD. The studies revealed that films were exhibiting preferential orientation along (002) plane. The other structural parameters like the crystallite size (D), micro strain (epsilon), dislocation density (delta) and stacking fault (alpha) of as-deposited and annealed ZnO films were evaluated and reported. The optical properties were also studied and the band gap of the ZnO thins films varied from 3.27 to 3.04 eV with the annealing temperature. SEM studies revealed that the hexagonal shaped grains with uniformly distributed morphology in annealed ZnO thin films. It has been envisaged using EDX analysis that the near stoichiometric composition of the film can be attained by thermal treatment during which microstructural changes do occur.

Improving the performance of an electrowetting lenticular lens array by using a thin polycarbonate chamber.

PubMed

Lee, Junsik; Kim, Junoh; Kim, Cheoljoong; Shin, Dooseub; Koo, Gyohyun; Sim, Jee Hoon; Won, Yong Hyub

2016-12-26

In this paper, we used a thin polycarbonate (PC) chamber to improve the performance of an electrowetting lenticular lens array. The polycarbonate chamber changed the radius of curvature (ROC) of the oil acting as a lens, which increased the dioptric power of the liquid lens to 1666.7D. The increase in dioptric power required a reduction in the distance between the optical center of the lens and the display pixels under the chamber, which was accomplished by reducing the thickness of the chamber. The optimal thickness of the chamber was determined to be 0.5mm. Using this thin PC chamber, transmittance and viewing angle were measured and compared with an electrowetting lenticular lens with a conventional 1mm poly methyl methacrylate (PMMA) chamber was done. Crosstalk which degrades clear 3D images, is an inevitable factor in lenticular lens type multi-view systems. With the 0.5mm PC chamber, the viewing zone was expanded and the ratio of the crosstalk area was reduced, which resulted in a clear 3D image. The new method of depositing the electrode layer also ensured the uniform operation of the liquid lens array.

Sol-gel deposited Cu2O and CuO thin films for photocatalytic water splitting.

PubMed

Lim, Yee-Fun; Chua, Chin Sheng; Lee, Coryl Jing Jun; Chi, Dongzhi

2014-12-21

Cu2O and CuO are attractive photocatalytic materials for water splitting due to their earth abundance and low cost. In this paper, we report the deposition of Cu2O and CuO thin films by a sol-gel spin-coating process. Sol-gel deposition has distinctive advantages such as low-cost solution processing and uniform film formation over large areas with a precise stoichiometry and thickness control. Pure-phase Cu2O and CuO films were obtained by thermal annealing at 500 °C in nitrogen and ambient air, respectively. The films were successfully incorporated as photocathodes in a photoelectrochemical (PEC) cell, achieving photocurrents of -0.28 mA cm(-2) and -0.35 mA cm(-2) (for Cu2O and CuO, respectively) at 0.05 V vs. a reversible hydrogen electrode (RHE). The Cu2O photocurrent was enhanced to -0.47 mA cm(-2) upon incorporation of a thin layer of a NiOx co-catalyst. Preliminary stability studies indicate that CuO may be more stable than Cu2O as a photocathode for PEC water-splitting.

Metal-Organic Framework Thin Film Coated Optical Fiber Sensors: A Novel Waveguide-Based Chemical Sensing Platform.

PubMed

Kim, Ki-Joong; Lu, Ping; Culp, Jeffrey T; Ohodnicki, Paul R

2018-02-23

Integration of optical fiber with sensitive thin films offers great potential for the realization of novel chemical sensing platforms. In this study, we present a simple design strategy and high performance of nanoporous metal-organic framework (MOF) based optical gas sensors, which enables detection of a wide range of concentrations of small molecules based upon extremely small differences in refractive indices as a function of analyte adsorption within the MOF framework. Thin and compact MOF films can be uniformly formed and tightly bound on the surface of etched optical fiber through a simple solution method which is critical for manufacturability of MOF-based sensor devices. The resulting sensors show high sensitivity/selectivity to CO 2 gas relative to other small gases (H 2 , N 2 , O 2 , and CO) with rapid (

Unconventional Nanoscale Photoresponse and Degradation Process in Hybrid Organic-inorganic Perovskites.

NASA Astrophysics Data System (ADS)

Chu, Zhaodong; Yang, Mengjin; Schulz, Philip; Wu, Di; Zhu, Kai; Li, Xiaoqin; Lai, Keji

The remarkable performance of organic-inorganic perovskite solar cells (PSCs) is challenging the dogma that solution-processed thin films are inevitably associated with inferior energy conversion efficiencies. The surprisingly low impact of polycrystallinity on the film quality highlights the unusual photo-response of intrinsic defects and grain boundaries in these materials. Here, we report the first quantitative nanoscale photoconductivity imaging on methylammonium lead triiodide (MAPbI3) thin films by microwave impedance microscopy with light stimulation. The local photoconductivity as a function of the above-gap laser power is consistent with the high carrier mobility and long lifetime of MAPbI3. The photo-response is largely uniform across grains and grain boundaries, which is direct evidence on the inherently benign nature of microstructures in the perovskite thin films. For encapsulated MAPbI3 films, the observed long-term degradation in photoconductivity begins with the disintegration of large grains due to the diffusion of water molecules through the capping layer. Our work suggests that the striking PSC performance is deeply rooted in the nanoscale optoelectronic properties of MAPbI3. We gratefully acknowledge financial support from NSF EFMA-1542747.

Influence of Deposition Pressure on the Properties of Round Pyramid Textured a-Si:H Solar Cells for Maglev.

PubMed

Lee, Jaehyeong; Choi, Wonseok; Lee, Kyuil; Lee, Daedong; Kang, Hyunil

2016-05-01

HIT (Heterojunction with Intrinsic Thin-layer) photovoltaic cells is one of the highest efficiencies in the commercial solar cells. The pyramid texturization for reducing surface reflectance of HIT solar cells silicon wafers is widely used. For the low leakage current and high shunt of solar cells, the intrinsic amorphous silicon (a-Si:H) on substrate must be uniformly thick of pyramid structure. However, it is difficult to control the thickness in the traditional pyramid texturing process. Thus, we textured the intrinsic a-Si:H thin films with the round pyramidal structure by using HNO3, HF, and CH3COOH solution. The characteristics of round pyramid a-Si:H solar cells deposited at pressure of 500, 1000, 1500, and 2000 mTorr by PECVD (Plasma Enhanced Chemical Vapor Deposition) was investigated. The lifetime, open circuit voltage, fill factor and efficiency of a-Si:H solar cells were investigated with respect to various deposition pressure.

Note: reliable and reusable ultrahigh vacuum optical viewports.

PubMed

Arora, P; Sen Gupta, A

2012-04-01

We report a simple technique for the realization of ultrahigh vacuum optical viewports. The technique relies on using specially designed thin copper knife-edges and using a thin layer of Vacseal(®) on tip of the knife-edges between the optical flat and the ConFlat(®) (CF) flange. The design of the windows is such that it gives uniform pressure on the flat without breaking it. The assembled window is a complete unit, which can be mounted directly onto a CF flange of the vacuum chamber. It can be removed and reused without breaking the window seal. The design is reliable as more than a dozen such windows have survived several bake out and cooling cycles and have been leak tested up to 10(-11) Torr l/s level with a commercial Helium leak detector. The advantages of this technique are ease of assembly and leak proof sealing that survives multiple temperature cycling making the windows reliable and reusable. © 2012 American Institute of Physics

Investigation of the unidirectional spin heat conveyer effect in a 200 nm thin Yttrium Iron Garnet film

NASA Astrophysics Data System (ADS)

Wid, Olga; Bauer, Jan; Müller, Alexander; Breitenstein, Otwin; Parkin, Stuart S. P.; Schmidt, Georg

2016-06-01

We have investigated the unidirectional spin wave heat conveyer effect in sub-micron thick yttrium iron garnet (YIG) films using lock-in thermography (LIT). Although the effect is small in thin layers this technique allows us to observe asymmetric heat transport by magnons which leads to asymmetric temperature profiles differing by several mK on both sides of the exciting antenna, respectively. Comparison of Damon-Eshbach and backward volume modes shows that the unidirectional heat flow is indeed due to non-reciprocal spin-waves. Because of the finite linewidth, small asymmetries can still be observed when only the uniform mode of ferromagnetic resonance is excited. The latter is of extreme importance for example when measuring the inverse spin-Hall effect because the temperature differences can result in thermovoltages at the contacts. Because of the non-reciprocity these thermovoltages reverse their sign with a reversal of the magnetic field which is typically deemed the signature of the inverse spin-Hall voltage.

A Confined Fabrication of Perovskite Quantum Dots in Oriented MOF Thin Film.

PubMed

Chen, Zheng; Gu, Zhi-Gang; Fu, Wen-Qiang; Wang, Fei; Zhang, Jian

2016-10-26

Organic-inorganic hybrid lead organohalide perovskites are inexpensive materials for high-efficiency photovoltaic solar cells, optical properties, and superior electrical conductivity. However, the fabrication of their quantum dots (QDs) with uniform ultrasmall particles is still a challenge. Here we use oriented microporous metal-organic framework (MOF) thin film prepared by liquid phase epitaxy approach as a template for CH 3 NH 3 PbI 2 X (X = Cl, Br, and I) perovskite QDs fabrication. By introducing the PbI 2 and CH 3 NH 3 X (MAX) precursors into MOF HKUST-1 (Cu 3 (BTC) 2 , BTC = 1,3,5-benzene tricarboxylate) thin film in a stepwise approach, the resulting perovskite MAPbI 2 X (X = Cl, Br, and I) QDs with uniform diameters of 1.5-2 nm match the pore size of HKUST-1. Furthermore, the photoluminescent properties and stability in the moist air of the perovskite QDs loaded HKUST-1 thin film were studied. This confined fabrication strategy demonstrates that the perovskite QDs loaded MOF thin film will be insensitive to air exposure and offers a novel means of confining the uniform size of the similar perovskite QDs according to the oriented porous MOF materials.

Vapor-Phase Atomic Layer Deposition of Co9S8 and Its Application for Supercapacitors.

PubMed

Li, Hao; Gao, Yuanhong; Shao, Youdong; Su, Yantao; Wang, Xinwei

2015-10-14

Atomic layer deposition (ALD) of cobalt sulfide (Co9S8) is reported. The deposition process uses bis(N,N'-diisopropylacetamidinato)cobalt(II) and H2S as the reactants and is able to produce high-quality Co9S8 films with an ideal layer-by-layer ALD growth behavior. The Co9S8 films can also be conformally deposited into deep narrow trenches with aspect ratio of 10:1, which demonstrates the high promise of this ALD process for conformally coating Co9S8 on high-aspect-ratio 3D nanostructures. As Co9S8 is a highly promising electrochemical active material for energy devices, we further explore its electrochemical performance by depositing Co9S8 on porous nickel foams for supercapacitor electrodes. Benefited from the merits of ALD for making high-quality uniform thin films, the ALD-prepared electrodes exhibit remarkable electrochemical performance, with high specific capacitance, great rate performance, and long-term cyclibility, which highlights the broad and promising applications of this ALD process for energy-related electrochemical devices, as well as for fabricating complex 3D nanodevices in general.

Swept shock/boundary layer interaction experiments in support of CFD code validation

NASA Technical Reports Server (NTRS)

Settles, G. S.; Lee, Y.

1992-01-01

Research on the topic of shock wave/turbulent boundary-layer interaction was carried out during the past three years at the Penn State Gas Dynamics Laboratory. This report describes the experimental research program which provides basic knowledge and establishes new data on heat transfer in swept shock wave/boundary-layer interactions. An equilibrium turbulent boundary-layer on a flat plate is subjected to impingement by swept planar shock waves generated by a sharp fin. Five different interactions with fin angle ranging from 10 deg to 20 deg at freestream Mach numbers of 3.0 and 4.0 produce a variety of interaction strengths from weak to very strong. A foil heater generates a uniform heat flux over the flat plate surface, and miniature thin-film-resistance sensors mounted on it are used to measure the local surface temperature. The heat convection equation is then solved for the heat transfer distribution within an interaction, yielding a total uncertainty of about +/- 10 percent. These experimental data are compared with the results of numerical Navier-Stokes solutions which employ a k-epsilon turbulence model. Finally, a simplified form of the peak heat transfer correlation for fin interactions is suggested.

Uncooled thin film pyroelectric IR detector with aerogel thermal isolation

DOEpatents

Ruffner, Judith A.; Bullington, Jeff A.; Clem, Paul G.; Warren, William L.; Brinker, C. Jeffrey; Tuttle, Bruce A.; Schwartz, Robert W.

1999-01-01

A monolithic infrared detector structure which allows integration of pyroelectric thin films atop low thermal conductivity aerogel thin films. The structure comprises, from bottom to top, a substrate, an aerogel insulating layer, a lower electrode, a pyroelectric layer, and an upper electrode layer capped by a blacking layer. The aerogel can offer thermal conductivity less than that of air, while providing a much stronger monolithic alternative to cantilevered or suspended air-gap structures for pyroelectric thin film pixel arrays. Pb(Zr.sub.0.4 Ti.sub.0.6)O.sub.3 thin films deposited on these structures displayed viable pyroelectric properties, while processed at 550.degree. C.

Transparent nanocellulosic multilayer thin films on polylactic acid with tunable gas barrier properties.

PubMed

Aulin, Christian; Karabulut, Erdem; Tran, Amy; Wågberg, Lars; Lindström, Tom

2013-08-14

The layer-by-layer (LbL) deposition method was used for the build-up of alternating layers of nanofibrillated cellulose (NFC) or carboxymethyl cellulose (CMC) with a branched, cationic polyelectrolyte, polyethyleneimine (PEI) on flexible poly (lactic acid) (PLA) substrates. With this procedure, optically transparent nanocellulosic films with tunable gas barrier properties were formed. 50 layer pairs of PEI/NFC and PEI/CMC deposited on PLA have oxygen permeabilities of 0.34 and 0.71 cm(3)·μm/m(2)·day·kPa at 23 °C and 50% relative humidity, respectively, which is in the same range as polyvinyl alcohol and ethylene vinyl alcohol. The oxygen permeability of these multilayer nanocomposites outperforms those of pure NFC films prepared by solvent-casting. The nanocellulosic LbL assemblies on PLA substrates was in detailed characterized using a quartz crystal microbalance with dissipation (QCM-D). Atomic force microscopy (AFM) reveals large structural differences between the PEI/NFC and the PEI/CMC assemblies, with the PEI/NFC assembly showing a highly entangled network of nanofibrils, whereas the PEI/CMC surfaces lacked structural features. Scanning electron microscopy images showed a nearly perfect uniformity of the nanocellulosic coatings on PLA, and light transmittance results revealed remarkable transparency of the LbL-coated PLA films. The present work demonstrates the first ever LbL films based on high aspect ratio, water-dispersible nanofibrillated cellulose, and water-soluble carboxymethyl cellulose polymers that can be used as multifunctional films and coatings with tailorable properties, such as gas barriers and transparency. Owing to its flexibility, transparency and high-performance gas barrier properties, these thin film assemblies are promising candidates for several large-scale applications, including flexible electronics and renewable packaging.

Characteristics of Reduced Graphene Oxide Quantum Dots for a Flexible Memory Thin Film Transistor.

PubMed

Kim, Yo-Han; Lee, Eun Yeol; Lee, Hyun Ho; Seo, Tae Seok

2017-05-17

Reduced graphene oxide quantum dot (rGOQD) devices in formats of capacitor and thin film transistor (TFT) were demonstrated and examined as the first trial to achieve nonambipolar channel property. In addition, through a gold nanoparticle (Au NP) layer embedded between the rGOQD active channel and dielectric layer, memory capacitor and TFT performances were realized by capacitance-voltage (C-V) hysteresis and gate program, erase, and reprogram biases. First, capacitor structure of the rGOQD memory device was constructed to examine memory charging effect featured in hysteretic C-V behavior with a 30 nm dielectric layer of cross-linked poly(vinyl alcohol). For the intervening Au NP charging layer, self-assembled monolayer (SAM) formation of the Au NP was executed to utilize electrostatic interaction by a dip-coating process under ambient environments with a conformal fabrication uniformity. Second, the rGOQD memory TFT device was also constructed in the same format of the Au NPs SAMs on a flexible substrate. Characteristics of the rGOQD TFT output showed novel saturation curves unlike typical graphene-based TFTs. However, The rGOQD TFT device reveals relatively low on/off ratio of 10 1 and mobility of 5.005 cm 2 /V·s. For the memory capacitor, the flat-band voltage shift (ΔV FB ) was measured as 3.74 V for ±10 V sweep, and for the memory TFT, the threshold voltage shift (ΔV th ) by the Au NP charging was detected as 7.84 V. In summary, it was concluded that the rGOQD memory device could accomplish an ideal graphene-based memory performance, which could have provided a wide memory window and saturated output characteristics.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Solution-based Syntheses of Iron Pyrite Thin Films for Photovoltaic and Protein Foot-printing Applications

NASA Astrophysics Data System (ADS)

El Makkaoui, Mohammed

Iron pyrite (cubic FeS2) is a non-toxic, earth abundant semiconductor possessing a set of excellent optical/electronic properties for serving as an absorber layer in PV devices. Additionally, pyrite is a very efficient hydroxyl radical generator via Fenton chemistry and has shown promise in oxidative protein and DNA foot-printing application. The main focus of this thesis is on fabricating phase and elementally pure iron pyrite thin films using a solution-based approach that employs hydrazine as a solvent. A precursor ink is formed at room temperature by mixing elemental iron and sulfur in anhydrous hydrazine and then deposited on Mo-coated glass substrates, via spin coating, to yield amorphous iron sulfide films that are then annealed in H2S (340°C) and sulfur gas (≤ 500 °C) to form uniform, polycrystalline and phase pure pyrite films with densely packed grains. This approach is likely to yield the most elementally pure pyrite thin films made to date, through a very simple and scalable process. The ink has shown to be very sensitive to environmental conditions and has a very short shelf life (˜1 day). Additionally, the film microstructure is greatly influenced by the S:Fe concentration ratio that when tuned to 3:1, yielded uniform, robust and optically flat iron sulfide thin films with an optimal thickness (˜320 nm) for PV application. The results however were not reproducible, mainly due to failure in applying multiple layers without compromising film morphology. Thinner (< 100 nm) iron sulfide films, on the other hand, are reproducibly produced, but are too thin to be employed in PV devices. Direct annealing in sulfur gas at 475°C for 4 hours, bypassing the > 12 hour H2S annealing step, yielded phase pure pyrite films, with good morphology, at lower processing time and annealing temperatures (< 500°C). The latter part of this thesis regards the use of pyrite nano-crystals in conjunction with high surface area polymer laminates for protein foot-printing application in collaboration with the Brenowitz lab at the Albert Einstein College of Medicine and the Khine lab at the University of California, Irvine. A thin film of pyrite nano-crystals is spray deposited (Video in supplementary ) onto a shape memory polymer that is then thermally treated with a heat gun, causing the sheet to retract and stiffen as the nanocrystalline layer crumples and integrates into the polyolefin, forming a mechanically robust and highly reactive laminate of pyrite nano-crystals. Micro-wells are thermoformed into the laminate under negative pressure. ˙OH dose-oxidation response relationship were established via varying the H2O 2 concentration and reaction time. The flexibility, cost effectiveness and scalability of this platform enables integration into macro-structural analysis systems. Pyrite shrink laminates and hydrazine ink films were characterized by Scanning Electron Microscopy (SEM), X-Ray Diffraction (XRD), and Raman Spectroscopy. Drop deposition oxidation experiments and MALDI-TOF "Matrix Assisted Laser Desorption/Ionization-Time of Flight" Mass Spectroscopy of protein aliquots reacted on PSWL were conducted in the Brenowitz lab at the department of biochemistry at the Albert Einstein College of Medicine in New York.

Numerical investigation of the seismic detectability of carbonate thin beds in the Boom Clay formation

NASA Astrophysics Data System (ADS)

Carcione, José M.; Gei, Davide

2016-07-01

The present study evaluates the capacity of the Boom Clay as a host rock for disposal purposes, more precisely its seismic characterization, which may assess its long-term performance to store radioactive wastes. Although the formation is relatively uniform and homogeneous, there are embedded thin layers of septaria (carbonates) that may affect the integrity of the Boom Clay. Therefore, it is essential to locate these geobodies. The seismic data to characterize the Boom Clay has been acquired at the Kruibeke test site. The inversion, which allowed us to obtain the anisotropy parameters and seismic velocities of the clay, is complemented with further information such as log and laboratory data. The attenuation properties have been estimated from equivalent formations (having similar composition and seismic velocities). The inversion yields quite consistent results although the symmetry of the medium is unusual but physically possible, since the anisotropy parameter ɛ is negative. According to a time-domain calculation of the energy velocity at four frequency bands up to 900 Hz, velocity increases with frequency, a behaviour described by the Zener model. Then, we use this model to describe anisotropy and anelasticity that are implemented into the equation of motion to compute synthetic seismograms in the space-time domain. The technique is based on memory variables and the Fourier pseudospectral method. We have computed reflection coefficients of the septaria thin layer. At normal incidence, the P-wave coefficient vanishes at specific thicknesses of the layer and there is no conversion to the S wave. For example, calculations at 600 Hz show that for thicknesses of 1 m the septarium can be detected more easily since the amplitudes are higher (nearly 0.8). Converted PS waves have a high amplitude at large offsets (between 30° and 80°) and can be useful to identify the target on this basis. Moreover, we have investigated the effect of septaria embedded in the Boom Clay with several simulations, by considering a lateral partial continuity of the calcareous thin inclusions. The simulations with layers of calcareous material show continuity of the reflections even when the percentage of carbonate within the layer is very small (5-15 per cent), while for low content of the calcareous material, isolated septaria boulders generate diffraction events. We have also simulated the stacked seismic section obtained from processing of the field data. The matching between the field and synthetic sections is acceptable.

Microwave remote plasma enhanced-atomic layer deposition system with multicusp confinement chamber

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dechana, A.; Thamboon, P.; Boonyawan, D., E-mail: dheerawan.b@cmu.ac.th

A microwave remote Plasma Enhanced-Atomic Layer Deposition system with multicusp confinement chamber is established at the Plasma and Beam Physics research facilities, Chiang Mai, Thailand. The system produces highly-reactive plasma species in order to enhance the deposition process of thin films. The addition of the multicusp magnetic fields further improves the plasma density and uniformity in the reaction chamber. Thus, the system is more favorable to temperature-sensitive substrates when heating becomes unwanted. Furthermore, the remote-plasma feature, which is generated via microwave power source, offers tunability of the plasma properties separately from the process. As a result, the system provides highmore » flexibility in choice of materials and design experiments, particularly for low-temperature applications. Performance evaluations of the system were carried on coating experiments of Al{sub 2}O{sub 3} layers onto a silicon wafer. The plasma characteristics in the chamber will be described. The resulted Al{sub 2}O{sub 3} films—analyzed by Rutherford Backscattering Spectrometry in channeling mode and by X-ray Photoelectron Spectroscopy techniques—will be discussed.« less

Mechanical and Thermal Analysis of Classical Functionally Graded Coated Beam

NASA Astrophysics Data System (ADS)

Toudehdehghan, Abdolreza; Mujibur Rahman, Md.; Tarlochan, Faris

2018-03-01

The governing equation of a classical rectangular coated beam made of two layers subjected to thermal and uniformly distributed mechanical loads are derived by using the principle of virtual displacements and based on Euler-Bernoulli deformation beam theory (EBT). The aim of this paper was to analyze the static behavior of clamped-clamped thin coated beam under thermo-mechanical load using MATLAB. Two models were considered for composite coated. The first model was consisting of ceramic layer as a coated and substrate which was metal (HC model). The second model was consisting of Functionally Graded Material (FGM) as a coated layer and metal substrate (FGC model). From the result it was apparent that the superiority of the FGC composite against conventional coated composite has been demonstrated. From the analysis, the stress level throughout the thickness at the interface of the coated beam for the FGC was reduced. Yet, the deflection in return was observed to increase. Therefore, this could cater to various new engineering applications where warrant the utilization of material that has properties that are well-beyond the capabilities of the conventional or yesteryears materials.

Electroless silver plating of the surface of organic semiconductors.

PubMed

Campione, Marcello; Parravicini, Matteo; Moret, Massimo; Papagni, Antonio; Schröter, Bernd; Fritz, Torsten

2011-10-04

The integration of nanoscale processes and devices demands fabrication routes involving rapid, cost-effective steps, preferably carried out under ambient conditions. The realization of the metal/organic semiconductor interface is one of the most demanding steps of device fabrication, since it requires mechanical and/or thermal treatments which increment costs and are often harmful in respect to the active layer. Here, we provide a microscopic analysis of a room temperature, electroless process aimed at the deposition of a nanostructured metallic silver layer with controlled coverage atop the surface of single crystals and thin films of organic semiconductors. This process relies on the reaction of aqueous AgF solutions with the nonwettable crystalline surface of donor-type organic semiconductors. It is observed that the formation of a uniform layer of silver nanoparticles can be accomplished within 20 min contact time. The electrical characterization of two-terminal devices performed before and after the aforementioned treatment shows that the metal deposition process is associated with a redox reaction causing the p-doping of the semiconductor. © 2011 American Chemical Society

Skin friction enhancement in a model problem of undulatory swimming

NASA Astrophysics Data System (ADS)

Ehrenstein, Uwe; Eloy, Christophe

2013-10-01

To calculate the energy costs of swimming, it is crucial to evaluate the drag force originating from skin friction. In this paper we examine the assumption, known as the 'Bone-Lighthill boundary-layer thinning hypothesis', that undulatory swimming motions induce a drag increase because of the compression of the boundary layer. Studying analytically an incoming flow along a flat plate moving at a normal velocity as a limit case of a yawed cylinder in uniform flow under the laminar boundary layer assumption, we demonstrate that the longitudinal drag scales as the square root of the normal velocity component. This analytical prediction is interpreted in the light of a three-dimensional numerical simulation result for a plate of finite length and width. An analogous two-dimensional Navier-Stokes problem by artificially accelerating the flow in a channel of finite height is proposed and solved numerically, showing the robustness of the analytical results. Solving the problem for an undulatory plate motion similar to fish swimming, we find a drag enhancement which can be estimated to be of the order of 20 %.

CIGS2 Thin-Film Solar Cells on Flexible Foils for Space Power

NASA Technical Reports Server (NTRS)

Dhere, Neelkanth G.; Ghongadi, Shantinath R.; Pandit, Mandar B.; Jahagirdar, Anant H.; Scheiman, David

2002-01-01

CuIn(1-x)Ga(x)S2 (CIGS2) thin-film solar cells are of interest for space power applications because of the near optimum bandgap for AM0 solar radiation in space. CIGS2 thin film solar cells on flexible stainless steel (SS) may be able to increase the specific power by an order of magnitude from the current level of 65 Wkg(sup -1). CIGS solar cells are superior to the conventional silicon and gallium arsenide solar cells in the space radiation environment. This paper presents research efforts for the development of CIGS2 thin-film solar cells on 127 micrometers and 20 micrometers thick, bright-annealed flexible SS foil for space power. A large-area, dual-chamber, inline thin film deposition system has been fabricated. The system is expected to provide thickness uniformity of plus or minus 2% over the central 5" width and plus or minus 3% over the central 6" width. During the next phase, facilities for processing larger cells will be acquired for selenization and sulfurization of metallic precursors and for heterojunction CdS layer deposition both on large area. Small area CIGS2 thin film solar cells are being prepared routinely. Cu-rich Cu-Ga/In layers were sputter-deposited on unheated Mo-coated SS foils from CuGa (22%) and In targets. Well-adherent, large-grain Cu-rich CIGS2 films were obtained by sulfurization in a Ar: H2S 1:0.04 mixture and argon flow rate of 650 sccm, at the maximum temperature of 475 C for 60 minutes with intermediate 30 minutes annealing step at 120 C. Samples were annealed at 500 C for 10 minutes without H2S gas flow. The intermediate 30 minutes annealing step at 120 C was changed to 135 C. p-type CIGS2 thin films were obtained by etching the Cu-rich layer segregated at the surface using dilute KCN solution. Solar cells were completed by deposition of CdS heterojunction partner layer by chemical bath deposition, transparent-conducting ZnO/ZnO: Al window bilayer by RF sputtering, and vacuum deposition of Ni/Al contact fingers through metal mask. PV parameters of a CIGS2 solar cell on 127 micrometers thick SS flexible foil measured under AM 0 conditions at NASA GRC were: V(sub oc) = 802.9 mV, J(sub sc) = 25.07 mA per square centimeters, FF = 60.06%, and efficiency 0 = 8.84%. For this cell, AM 1.5 PV parameters measured at NREL were: V(sub oc) = 788 mV, J(sub sc) = 19.78 mA per square centimeter, FF = 59.44%, efficiency 0 = 9.26%. Quantum efficiency curve showed a sharp QE cutoff equivalent to CIGS2 bandgap of approximately 1.50 eV, fairly close to the optimum value for efficient AM0 PV conversion in the space.

Characterizing Non-Uniformity of Performance of Thin-Film Solar Cells

NASA Technical Reports Server (NTRS)

Clark, Eric B. (Technical Monitor); Lush, Gregory B.

2003-01-01

Thin-film Solar Cells are being actively studied for terrestrial and space applications because of their potential to provide low-cost, lightweight, and flexible electric power system. Currently, thin-film solar cell performance is limited partially by the nonuniformity of performance that they typically exhibit. This nonuniformity of performance necessitates more detailed characterization techniques than the well-known macroscopic measurements such as current-voltage and efficiency. This project seeks to explore methods of characterization that take into account the spatial nonuniformity of thin-film solar cells. In this presentation we show results of electroluminescence images, short-circuit maps, and Kelvin Probe maps. All these mapping characterization and analysis tools show that the non-uniformities can correlated with device performance and efficiency.

Optimization and characterization of biomolecule immobilization on silicon substrates using (3-aminopropyl)triethoxysilane (APTES) and glutaraldehyde linker

NASA Astrophysics Data System (ADS)

Gunda, Naga Siva Kumar; Singh, Minashree; Norman, Lana; Kaur, Kamaljit; Mitra, Sushanta K.

2014-06-01

In the present work, we developed and optimized a technique to produce a thin, stable silane layer on silicon substrate in a controlled environment using (3-aminopropyl)triethoxysilane (APTES). The effect of APTES concentration and silanization time on the formation of silane layer is studied using spectroscopic ellipsometry and Fourier transform infrared spectroscopy (FTIR). Biomolecules of interest are immobilized on optimized silane layer formed silicon substrates using glutaraldehyde linker. Surface analytical techniques such as ellipsometry, FTIR, contact angle measurement system, and atomic force microscopy are employed to characterize the bio-chemically modified silicon surfaces at each step of the biomolecule immobilization process. It is observed that a uniform, homogenous and highly dense layer of biomolecules are immobilized with optimized silane layer on the silicon substrate. The developed immobilization method is successfully implemented on different silicon substrates (flat and pillar). Also, different types of biomolecules such as anti-human IgG (rabbit monoclonal to human IgG), Listeria monocytogenes, myoglobin and dengue capture antibodies were successfully immobilized. Further, standard sandwich immunoassay (antibody-antigen-antibody) is employed on respective capture antibody coated silicon substrates. Fluorescence microscopy is used to detect the respective FITC tagged detection antibodies bound to the surface after immunoassay.

Atomic layer deposition-based functionalization of materials for medical and environmental health applications

PubMed Central

Narayan, Roger J.; Adiga, Shashishekar P.; Pellin, Michael J.; Curtiss, Larry A.; Hryn, Alexander J.; Stafslien, Shane; Chisholm, Bret; Shih, Chun-Che; Shih, Chun-Ming; Lin, Shing-Jong; Su, Yea-Yang; Jin, Chunming; Zhang, Junping; Monteiro-Riviere, Nancy A.; Elam, Jeffrey W.

2010-01-01

Nanoporous alumina membranes exhibit high pore densities, well-controlled and uniform pore sizes, as well as straight pores. Owing to these unusual properties, nanoporous alumina membranes are currently being considered for use in implantable sensor membranes and water purification membranes. Atomic layer deposition is a thin-film growth process that may be used to modify the pore size in a nanoporous alumina membrane while retaining a narrow pore distribution. In addition, films deposited by means of atomic layer deposition may impart improved biological functionality to nanoporous alumina membranes. In this study, zinc oxide coatings and platinum coatings were deposited on nanoporous alumina membranes by means of atomic layer deposition. PEGylated nanoporous alumina membranes were prepared by self-assembly of 1-mercaptoundec-11-yl hexa(ethylene glycol) on platinum-coated nanoporous alumina membranes. The pores of the PEGylated nanoporous alumina membranes remained free of fouling after exposure to human platelet-rich plasma; protein adsorption, fibrin networks and platelet aggregation were not observed on the coated membrane surface. Zinc oxide-coated nanoporous alumina membranes demonstrated activity against two waterborne pathogens, Escherichia coli and Staphylococcus aureus. The results of this work indicate that nanoporous alumina membranes may be modified using atomic layer deposition for use in a variety of medical and environmental health applications. PMID:20308114

System and Method for Fabricating Super Conducting Circuitry on Both Sides of an Ultra-Thin Layer

NASA Technical Reports Server (NTRS)

Brown, Ari D. (Inventor); Mikula, Vilem (Inventor)

2017-01-01

A method of fabricating circuitry in a wafer includes depositing a superconducting metal on a silicon on insulator wafer having a handle wafer, coating the wafer with a sacrificial layer and bonding the wafer to a thermally oxide silicon wafer with a first epoxy. The method includes flipping the wafer, thinning the flipped wafer by removing a handle wafer, etching a buried oxide layer, depositing a superconducting layer, bonding the wafer to a thermally oxidized silicon wafer having a handle wafer using an epoxy, flipping the wafer again, thinning the flipped wafer, etching a buried oxide layer from the wafer and etching the sacrificial layer from the wafer. The result is a wafer having superconductive circuitry on both sides of an ultra-thin silicon layer.

Photoluminescence-based quality control for thin film absorber layers of photovoltaic devices

DOEpatents

Repins, Ingrid L.; Kuciauskas, Darius

2015-07-07

A time-resolved photoluminescence-based system providing quality control during manufacture of thin film absorber layers for photovoltaic devices. The system includes a laser generating excitation beams and an optical fiber with an end used both for directing each excitation beam onto a thin film absorber layer and for collecting photoluminescence from the absorber layer. The system includes a processor determining a quality control parameter such as minority carrier lifetime of the thin film absorber layer based on the collected photoluminescence. In some implementations, the laser is a low power, pulsed diode laser having photon energy at least great enough to excite electron hole pairs in the thin film absorber layer. The scattered light may be filterable from the collected photoluminescence, and the system may include a dichroic beam splitter and a filter that transmit the photoluminescence and remove scattered laser light prior to delivery to a photodetector and a digital oscilloscope.

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Advanced germanium layer transfer for ultra thin body on insulator structure

NASA Astrophysics Data System (ADS)

Maeda, Tatsuro; Chang, Wen-Hsin; Irisawa, Toshifumi; Ishii, Hiroyuki; Hattori, Hiroyuki; Poborchii, Vladimir; Kurashima, Yuuichi; Takagi, Hideki; Uchida, Noriyuki

2016-12-01

We present the HEtero-Layer Lift-Off (HELLO) technique to obtain ultra thin body (UTB) Ge on insulator (GeOI) substrates. The transferred ultra thin Ge layers are characterized by the Raman spectroscopy measurements down to the thickness of ˜1 nm, observing a strong Raman intensity enhancement for high quality GeOI structure in ultra thin regime due to quantum size effect. This advanced Ge layer transfer technique enabled us to demonstrate UTB-GeOI nMOSFETs with the body thickness of only 4 nm.

Y1Ba2Cu3O(6+delta) growth on thin Y-enhanced SiO2 buffer layers on silicon

NASA Technical Reports Server (NTRS)

Robin, T.; Mesarwi, A.; Wu, N. J.; Fan, W. C.; Espoir, L.; Ignatiev, A.; Sega, R.

1991-01-01

SiO2 buffer layers as thin as 2 nm have been developed for use in the growth of Y1Ba2Cu3O(6+delta) thin films on silicon substrates. The SiO2 layers are formed through Y enhancement of silicon oxidation, and are highly stoichiometric. Y1Ba2Cu3O(6+delta) film growth on silicon with thin buffer layers has shown c orientation and Tc0 = 78 K.

Photovoltaic devices comprising cadmium stannate transparent conducting films and method for making

DOEpatents

Wu, X.; Coutts, T.J.; Sheldon, P.; Rose, D.H.

1999-07-13

A photovoltaic device is disclosed having a substrate, a layer of Cd[sub 2]SnO[sub 4] disposed on said substrate as a front contact, a thin film comprising two or more layers of semiconductor materials disposed on said layer of Cd[sub 2]SnO[sub 4], and an electrically conductive film disposed on said thin film of semiconductor materials to form a rear electrical contact to said thin film. The device is formed by RF sputter coating a Cd[sub 2]SnO[sub 4] layer onto a substrate, depositing a thin film of semiconductor materials onto the layer of Cd[sub 2]SnO[sub 4], and depositing an electrically conductive film onto the thin film of semiconductor materials. 10 figs.

Layered Organization in the Coastal Ocean: 4-D Assessment of Thin Layer Structure, Dynamics and Impacts

DTIC Science & Technology

2009-09-30

maintenance and dissipation of layers; (2) to understand the spatial coherence and spatial properties of thin layers in the coastal ocean (especially in...ORCAS profilers at K1 South and K2 had a Nortek ADV (Acoustic Doppler Velocity meter) for simultaneously measuring centimeter- scale currents and...year will be used to (1) detect the presence, intensity, thickness, temporal persistence, and spatial coherence of thin optical and acoustical layers

A tri-layer thin film containing graphene oxide to protect zinc substrates from wear

NASA Astrophysics Data System (ADS)

Wang, Ying; Gu, Zhengpeng; Yuan, Ningyi; Chu, Fuqiang; Cheng, Guanggui; Ding, Jianning

2018-06-01

Due to its excellent properties, Zn alloy is widely used in daily life. However, the poor wear-resisting properties of Zn alloys limits their application. In this paper, a tri-layer thin film consisting of 3-aminopropyltriethoxysilane (APS), graphene oxide (GO) and perfluoropolyethers (PFPE) were successfully prepared on the surface of Zn alloy to improve the wear-resisting properties. The as-prepared tri-layer thin films were characterized by atomic force microscopy, Raman spectroscopy, x-ray photoelectron spectroscopy and contact angle measurement. In addition, the tribological properties of the as-prepared tri-layer thin films were studied on a ball-on-plate tribometer and the morphologies of worn surfaces were observed using 3D noncontact interferometric microscope. Compared with the control samples, the tri-layer thin films showed excellent friction-reducing and wear-resisting properties, which was attributed to the synergistic effect of the GO as the load-carrying layer and the PFPE as the lubricating layer.

Nonlinear periodic wavetrains in thin liquid films falling on a uniformly heated horizontal plate

NASA Astrophysics Data System (ADS)

Issokolo, Remi J. Noumana; Dikandé, Alain M.

2018-05-01

A thin liquid film falling on a uniformly heated horizontal plate spreads into fingering ripples that can display a complex dynamics ranging from continuous waves, nonlinear spatially localized periodic wave patterns (i.e., rivulet structures) to modulated nonlinear wavetrain structures. Some of these structures have been observed experimentally; however, conditions under which they form are still not well understood. In this work, we examine profiles of nonlinear wave patterns formed by a thin liquid film falling on a uniformly heated horizontal plate. For this purpose, the Benney model is considered assuming a uniform temperature distribution along the film propagation on the horizontal surface. It is shown that for strong surface tension but a relatively small Biot number, spatially localized periodic-wave structures can be analytically obtained by solving the governing equation under appropriate conditions. In the regime of weak nonlinearity, a multiple-scale expansion combined with the reductive perturbation method leads to a complex Ginzburg-Landau equation: the solutions of which are modulated periodic pulse trains which amplitude and width and period are expressed in terms of characteristic parameters of the model.

Fabrication of Crack-Free Barium Titanate Thin Film with High Dielectric Constant Using Sub-Micrometric Scale Layer-by-Layer E-Jet Deposition

PubMed Central

Liang, Junsheng; Li, Pengfei; Wang, Dazhi; Fang, Xu; Ding, Jiahong; Wu, Junxiong; Tang, Chang

2016-01-01

Dense and crack-free barium titanate (BaTiO3, BTO) thin films with a thickness of less than 4 μm were prepared by using sub-micrometric scale, layer-by-layer electrohydrodynamic jet (E-jet) deposition of the suspension ink which is composed of BTO nanopowder and BTO sol. Impacts of the jet height and line-to-line pitch of the deposition on the micro-structure of BTO thin films were investigated. Results show that crack-free BTO thin films can be prepared with 4 mm jet height and 300 μm line-to-line pitch in this work. Dielectric constant of the prepared BTO thin film was recorded as high as 2940 at 1 kHz at room temperature. Meanwhile, low dissipation factor of the BTO thin film of about 8.6% at 1 kHz was also obtained. The layer-by-layer E-jet deposition technique developed in this work has been proved to be a cost-effective, flexible and easy to control approach for the preparation of high-quality solid thin film. PMID:28787860

MultiLayer solid electrolyte for lithium thin film batteries

DOEpatents

Lee, Se -Hee; Tracy, C. Edwin; Pitts, John Roland; Liu, Ping

2015-07-28

A lithium metal thin-film battery composite structure is provided that includes a combination of a thin, stable, solid electrolyte layer [18] such as Lipon, designed in use to be in contact with a lithium metal anode layer; and a rapid-deposit solid electrolyte layer [16] such as LiAlF.sub.4 in contact with the thin, stable, solid electrolyte layer [18]. Batteries made up of or containing these structures are more efficient to produce than other lithium metal batteries that use only a single solid electrolyte. They are also more resistant to stress and strain than batteries made using layers of only the stable, solid electrolyte materials. Furthermore, lithium anode batteries as disclosed herein are useful as rechargeable batteries.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors.

PubMed

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-02-25

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al₂O₃ and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value.

Developments of the Physical and Electrical Properties of NiCr and NiCrSi Single-Layer and Bi-Layer Nano-Scale Thin-Film Resistors

PubMed Central

Cheng, Huan-Yi; Chen, Ying-Chung; Li, Chi-Lun; Li, Pei-Jou; Houng, Mau-Phon; Yang, Cheng-Fu

2016-01-01

In this study, commercial-grade NiCr (80 wt % Ni, 20 wt % Cr) and NiCrSi (55 wt % Ni, 40 wt % Cr, 5 wt % Si) were used as targets and the sputtering method was used to deposit NiCr and NiCrSi thin films on Al2O3 and Si substrates at room temperature under different deposition time. X-ray diffraction patterns showed that the NiCr and NiCrSi thin films were amorphous phase, and the field-effect scanning electronic microscope observations showed that only nano-crystalline grains were revealed on the surfaces of the NiCr and NiCrSi thin films. The log (resistivity) values of the NiCr and NiCrSi thin-film resistors decreased approximately linearly as their thicknesses increased. We found that the value of temperature coefficient of resistance (TCR value) of the NiCr thin-film resistors was positive and that of the NiCrSi thin-film resistors was negative. To investigate these thin-film resistors with a low TCR value, we designed a novel bi-layer structure to fabricate the thin-film resistors via two different stacking methods. The bi-layer structures were created by depositing NiCr for 10 min as the upper (or lower) layer and depositing NiCrSi for 10, 30, or 60 min as the lower (or upper) layer. We aim to show that the stacking method had no apparent effect on the resistivity of the NiCr-NiCrSi bi-layer thin-film resistors but had large effect on the TCR value. PMID:28344296

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.

2016-01-07

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupledmore » plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.« less

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

2016-01-01

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

Influences of Indium Tin Oxide Layer on the Properties of RF Magnetron-Sputtered (BaSr)TiO3 Thin Films on Indium Tin Oxide-Coated Glass Substrate

NASA Astrophysics Data System (ADS)

Kim, Tae Song; Oh, Myung Hwan; Kim, Chong Hee

1993-06-01

Nearly stoichiometric ((Ba+Sr)/Ti=1.08-1.09) and optically transparent (BaSr)TiO3 thin films were deposited on an indium tin oxide (ITO)-coated glass substrate by means of rf magnetron sputtering for their application to the insulating layer of an electroluminescent flat panel display. The influence of the ITO layer on the properties of (BaSr)TiO3 thin films deposited on the ITO-coated substrate was investigated. The ITO layer did not affect the crystallographic orientation of (BaSr)TiO3 thin film, but enhanced the grain growth. Another effect of the ITO layer on (BaSr)TiO3 thin films was the interdiffusion phenomenon, which was studied by means of secondary ion mass spectrometry (SIMS). As the substrate temperature increased, interdiffusion intensified at the interface not only between the grown film and ITO layer but also between the ITO layer and base glass substrate. The refractive index (nf) of (BaSr)TiO3 thin film deposited on a bare glass substrate was 2.138-2.286, as a function of substrate temperature.

Corrosion-resistant multilayer structures with improved reflectivity

DOEpatents

Soufli, Regina; Fernandez-Perea, Monica; Robinson, Jeff C.

2013-04-09

In one general embodiment, a thin film structure includes a substrate; a first corrosion barrier layer above the substrate; a reflective layer above the first corrosion barrier layer, wherein the reflective layer comprises at least one repeating set of sub-layers, wherein one of the sub-layers of each set of sub-layers being of a corrodible material; and a second corrosion barrier layer above the reflective layer. In another general embodiment, a system includes an optical element having a thin film structure as recited above; and an image capture or spectrometer device. In a further general embodiment, a laser according to one embodiment includes a light source and the thin film structure as recited above.

Internal hypersonic flow. [in thin shock layer

NASA Technical Reports Server (NTRS)

Lin, T. C.; Rubin, S. G.

1974-01-01

An approach for studying hypersonic internal flow with the aid of a thin-shock-layer approximation is discussed, giving attention to a comparison of thin-shock-layer results with the data obtained on the basis of the imposition theory or a finite-difference integration of the Euler equations. Relations in the case of strong interaction are considered together with questions of pressure distribution and aspects of the boundary-layer solution.

Methods for producing thin film charge selective transport layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hammond, Scott Ryan; Olson, Dana C.; van Hest, Marinus Franciscus Antonius Maria

Methods for producing thin film charge selective transport layers are provided. In one embodiment, a method for forming a thin film charge selective transport layer comprises: providing a precursor solution comprising a metal containing reactive precursor material dissolved into a complexing solvent; depositing the precursor solution onto a surface of a substrate to form a film; and forming a charge selective transport layer on the substrate by annealing the film.

Al-/Ga-Doped ZnO Window Layers for Highly Efficient Cu₂ZnSn(S,Se)₄ Thin Film Solar Cells.

PubMed

Seo, Se Won; Seo, Jung Woo; Kim, Donghwan; Cheon, Ki-Beom; Lee, Doh-Kwon; Kim, Jin Young

2018-09-01

The successful use of Al-/Ga-doped ZnO (AGZO) thin films as a transparent conducting oxide (TCO) layer of a Cu2ZnSn(S,Se)4 (CZTSSe) thin film solar cell is demonstrated. The AGZO thin films were prepared by radio frequency (RF) sputtering. The structural, crystallographic, electrical, and optical properties of the AGZO thin films were systematically investigated. The photovoltaic properties of CZTSSe thin film solar cells incorporating the AGZO-based TCO layer were also reported. It has been found that the RF power and substrate temperature of the AGZO thin film are important factors determining the electrical, optical, and structural properties. The optimization process involving the RF power and the substrate temperature leads to good electrical and optical transmittance of the AGZO thin films. Finally, the CZTSSe solar cell with the AGZO TCO layer demonstrated a high conversion efficiency of 9.68%, which is higher than that of the conventional AZO counterpart by 12%.

Growth and optical property characterization of textured barium titanate thin films for photonic applications

NASA Astrophysics Data System (ADS)

Dicken, Matthew J.; Diest, Kenneth; Park, Young-Bae; Atwater, Harry A.

2007-03-01

We have investigated the growth of barium titanate thin films on bulk crystalline and amorphous substrates utilizing biaxially oriented template layers. Ion beam-assisted deposition was used to grow thin, biaxially textured, magnesium oxide template layers on amorphous and silicon substrates. Growth of highly oriented barium titanate films on these template layers was achieved by molecular beam epitaxy using a layer-by-layer growth process. Barium titanate thin films were grown in molecular oxygen and in the presence of oxygen radicals produced by a 300 W radio frequency plasma. We used X-ray and in situ reflection high-energy electron diffraction (RHEED) to analyze the structural properties and show the predominantly c-oriented grains in the films. Variable angle spectroscopic ellipsometry was used to analyze and compare the optical properties of the thin films grown with and without oxygen plasma. We have shown that optical quality barium titanate thin films, which show bulk crystal-like properties, can be grown on any substrate through the use of biaxially oriented magnesium oxide template layers.

Nanomechanical properties of platinum thin films synthesized by atomic layer deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mamun, M.A.; Gu, D.; Baumgart, H.

2015-03-01

The nanomechanical properties of Pt thin films grown on Si (100) using atomic layer deposition (ALD) were investigated using nanoindentation. Recently, atomic layer deposition (ALD) has successfully demonstrated the capability to deposit ultra-thin films of platinum (Pt). Using (methylcyclopentadienyl) trimethylplatinum (MeCpPtMe3) as chemical platinum precursor and oxygen (O2) as the oxidizing agent, the ALD synthesis of Pt can be achieved with high conformity and excellent film uniformity. The ALD process window for Pt films was experimentally established in the temperature range between 270 °C and 320 °C, where the sheet conductance was constant over that temperature range, indicating stable ALDmore » Pt film growth rate. ALD growth of Pt films exhibits very poor nucleation and adhesion characteristics on bare Si surfaces when the native oxide was removed by 2% HF etch. Pt adhesion improves for thermally oxidized Si wafers and for Si wafers covered with native oxide. Three ALD Pt films deposited at 800, 900, and 1000 ALD deposition cycles were tested for the structural and mechanical properties. Additionally, the sample with 900 ALD deposition cycles was further annealed in forming gas (95% N2 and 5% H2) at 450 °C for 30 min in order to passivate dangling bonds in the grain boundaries of the polycrystalline Pt film. Cross-sectional transmission electron microscopy (TEM), X-ray diffraction (XRD), atomic force microscopy (AFM), and scanning electron microscope (SEM) were employed to characterize the films' surface structure and morphology. Nanoindentation technique was used to evaluate the hardness and modulus of the ALD Pt films of various film thicknesses. The results indicate that the films depict comparable hardness and modulus results; however, the 800 and 1000 ALD deposition cycles films without forming gas annealing experienced significant amount of pileup, whereas the 900 ALD deposition cycles sample annealed in forming gas resulted in a smaller pileup.« less

Electrode with transparent series resistance for uniform switching of optical modulation devices

DOEpatents

Tench, D Morgan [Camarillo, CA; Cunningham, Michael A [Thousand Oaks, CA; Kobrin, Paul H [Newbury Park, CA

2008-01-08

Switching uniformity of an optical modulation device for controlling the propagation of electromagnetic radiation is improved by use of an electrode comprising an electrically resistive layer that is transparent to the radiation. The resistive layer is preferably an innerlayer of a wide-bandgap oxide sandwiched between layers of indium tin oxide or another transparent conductor, and may be of uniform thickness, or may be graded so as to provide further improvement in the switching uniformity. The electrode may be used with electrochromic and reversible electrochemical mirror (REM) smart window devices, as well as display devices based on various technologies.

Influence of Filler Alloy Composition and Process Parameters on the Intermetallic Layer Thickness in Single-Sided Cold Metal Transfer Welding of Aluminum-Steel Blanks

NASA Astrophysics Data System (ADS)

Silvayeh, Zahra; Vallant, Rudolf; Sommitsch, Christof; Götzinger, Bruno; Karner, Werner; Hartmann, Matthias

2017-11-01

Hybrid components made of aluminum alloys and high-strength steels are typically used in automotive lightweight applications. Dissimilar joining of these materials is quite challenging; however, it is mandatory in order to produce multimaterial car body structures. Since especially welding of tailored blanks is of utmost interest, single-sided Cold Metal Transfer butt welding of thin sheets of aluminum alloy EN AW 6014 T4 and galvanized dual-phase steel HCT 450 X + ZE 75/75 was experimentally investigated in this study. The influence of different filler alloy compositions and welding process parameters on the thickness of the intermetallic layer, which forms between the weld seam and the steel sheet, was studied. The microstructures of the weld seam and of the intermetallic layer were characterized using conventional optical light microscopy and scanning electron microscopy. The results reveal that increasing the heat input and decreasing the cooling intensity tend to increase the layer thickness. The silicon content of the filler alloy has the strongest influence on the thickness of the intermetallic layer, whereas the magnesium and scandium contents of the filler alloy influence the cracking tendency. The layer thickness is not uniform and shows spatial variations along the bonding interface. The thinnest intermetallic layer (mean thickness < 4 µm) is obtained using the silicon-rich filler Al-3Si-1Mn, but the layer is more than twice as thick when different low-silicon fillers are used.

High-performance multilayer composite membranes with mussel-inspired polydopamine as a versatile molecular bridge for CO2 separation.

PubMed

Li, Panyuan; Wang, Zhi; Li, Wen; Liu, Yanni; Wang, Jixiao; Wang, Shichang

2015-07-22

It is desirable to develop high-performance composite membranes for efficient CO2 separation in CO2 capture process. Introduction of a highly permeable polydimethylsiloxane (PDMS) intermediate layer between a selective layer and a porous support has been considered as a simple but efficient way to enhance gas permeance while maintaining high gas selectivity, because the introduced intermediate layer could benefit the formation of an ultrathin defect-free selective layer owing to the circumvention of pore penetration phenomenon. However, the selection of selective layer materials is unfavorably restricted because of the low surface energy of PDMS. Various highly hydrophilic membrane materials such as amino group-rich polyvinylamine (PVAm), a representative facilitated transport membrane material for CO2 separation, could not be facilely coated over the surface of the hydrophobic PDMS intermediate layer uniformly. Inspired by the hydrophilic nature and strong adhesive ability of polydopamine (PDA), PDA was therefore selected as a versatile molecular bridge between hydrophobic PDMS and hydrophilic PVAm. The PDA coating endows a highly compatible interface between both components with a large surface energy difference via multiple-site cooperative interactions. The resulting multilayer composite membrane with a thin facilitated transport PVAm selective layer exhibits a notably enhanced CO2 permeance (1887 GPU) combined with a slightly improved CO2/N2 selectivity (83), as well as superior structural stability. Similarly, the multilayer composite membrane with a hydrophilic CO2-philic Pebax 1657 selective layer was also developed for enhanced CO2 separation performance.

Coupling Single-Mode Fiber to Uniform and Symmetrically Tapered Thin-Film Waveguide Structures Using Gadolinium Gallium Garnet

NASA Technical Reports Server (NTRS)

Gadi, Jagannath; Yalamanchili, Raj; Shahid, Mohammad

1995-01-01

The need for high efficiency components has grown significantly due to the expanding role of fiber optic communications for various applications. Integrated optics is in a state of metamorphosis and there are many problems awaiting solutions. One of the main problems being the lack of a simple and efficient method of coupling single-mode fibers to thin-film devices for integrated optics. In this paper, optical coupling between a single-mode fiber and a uniform and tapered thin-film waveguide is theoretically modeled and analyzed. A novel tapered structure presented in this paper is shown to produce perfect match for power transfer.

Effect of different coating layer on the topography and optical properties of ZnO nanostructured

NASA Astrophysics Data System (ADS)

Mohamed, R.; Mamat, M. H.; Malek, M. F.; Ismail, A. S.; Yusoff, M. M.; Asiah, M. N.; Khusaimi, Z.; Rusop, M.

2018-05-01

Magnesium (Mg) and aluminum (Al) co-doped zinc oxide (MAZO) thin films were synthesized on glass substrate by sol-gel spin coating method. MAZO thin films were prepared at different coating layers range from 1 to 9. Atomic Force Microscopy (AFM) was used to investigate the topography of the thin films. According to the AFM results, Root Means Square (RMS) of MAZO thin films was increased from 0.747 to 6.545 nm, with increase of number coating layer from 1 to 9, respectively. The results shown the variation on structural and topography properties of MAZO seed film when it's deposited at different coating layers on glass substrate. The optical properties was analyzed using UV-Vis spectroscopy. The obtained results show that the transmittance spectra was increased as thin films coating layer increases.

Thin layer model for nonlinear evolution of the Rayleigh-Taylor instability

NASA Astrophysics Data System (ADS)

Zhao, K. G.; Wang, L. F.; Xue, C.; Ye, W. H.; Wu, J. F.; Ding, Y. K.; Zhang, W. Y.

2018-03-01

On the basis of the thin layer approximation [Ott, Phys. Rev. Lett. 29, 1429 (1972)], a revised thin layer model for incompressible Rayleigh-Taylor instability has been developed to describe the deformation and nonlinear evolution of the perturbed interface. The differential equations for motion are obtained by analyzing the forces (the gravity and pressure difference) of fluid elements (i.e., Newton's second law). The positions of the perturbed interface are obtained from the numerical solution of the motion equations. For the case of vacuum on both sides of the layer, the positions of the upper and lower interfaces obtained from the revised thin layer approximation agree with that from the weakly nonlinear (WN) model of a finite-thickness fluid layer [Wang et al., Phys. Plasmas 21, 122710 (2014)]. For the case considering the fluids on both sides of the layer, the bubble-spike amplitude from the revised thin layer model agrees with that from the WN model [Wang et al., Phys. Plasmas 17, 052305 (2010)] and the expanded Layzer's theory [Goncharov, Phys. Rev. Lett. 88, 134502 (2002)] in the early nonlinear growth regime. Note that the revised thin layer model can be applied to investigate the perturbation growth at arbitrary Atwood numbers. In addition, the large deformation (the large perturbed amplitude and the arbitrary perturbed distributions) in the initial stage can also be described by the present model.

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

PubMed Central

Fei, Ze-yuan; Xu, Yi-feng; Wang, Jie; Fan, Bing-feng; Ma, Xue-jin; Wang, Gang

2018-01-01

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality. PMID:29515883

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model.

PubMed

Li, Jian; Fei, Ze-Yuan; Xu, Yi-Feng; Wang, Jie; Fan, Bing-Feng; Ma, Xue-Jin; Wang, Gang

2018-02-01

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.

Study on the optimization of the deposition rate of planetary GaN-MOCVD films based on CFD simulation and the corresponding surface model

NASA Astrophysics Data System (ADS)

Li, Jian; Fei, Ze-yuan; Xu, Yi-feng; Wang, Jie; Fan, Bing-feng; Ma, Xue-jin; Wang, Gang

2018-02-01

Metal-organic chemical vapour deposition (MOCVD) is a key technique for fabricating GaN thin film structures for light-emitting and semiconductor laser diodes. Film uniformity is an important index to measure equipment performance and chip processes. This paper introduces a method to improve the quality of thin films by optimizing the rotation speed of different substrates of a model consisting of a planetary with seven 6-inch wafers for the planetary GaN-MOCVD. A numerical solution to the transient state at low pressure is obtained using computational fluid dynamics. To evaluate the role of the different zone speeds on the growth uniformity, single factor analysis is introduced. The results show that the growth rate and uniformity are strongly related to the rotational speed. Next, a response surface model was constructed by using the variables and the corresponding simulation results. The optimized combination of the matching of different speeds is also proposed as a useful reference for applications in industry, obtained by a response surface model and genetic algorithm with a balance between the growth rate and the growth uniformity. This method can save time, and the optimization can obtain the most uniform and highest thin film quality.