Achieving Optimal Self-Adaptivity for Dynamic Tuning of Organic Semiconductors through Resonance Engineering.

PubMed

Tao, Ye; Xu, Lijia; Zhang, Zhen; Chen, Runfeng; Li, Huanhuan; Xu, Hui; Zheng, Chao; Huang, Wei

2016-08-03

Current static-state explorations of organic semiconductors for optimal material properties and device performance are hindered by limited insights into the dynamically changed molecular states and charge transport and energy transfer processes upon device operation. Here, we propose a simple yet successful strategy, resonance variation-based dynamic adaptation (RVDA), to realize optimized self-adaptive properties in donor-resonance-acceptor molecules by engineering the resonance variation for dynamic tuning of organic semiconductors. Organic light-emitting diodes hosted by these RVDA materials exhibit remarkably high performance, with external quantum efficiencies up to 21.7% and favorable device stability. Our approach, which supports simultaneous realization of dynamically adapted and selectively enhanced properties via resonance engineering, illustrates a feasible design map for the preparation of smart organic semiconductors capable of dynamic structure and property modulations, promoting the studies of organic electronics from static to dynamic.

Unstable Resonator Retrofitted Handheld Laser Designator

DTIC Science & Technology

1978-06-01

retrofitted with a negative-branch unstable resona- tor laser and hybrid pump cavity in place of the conventional plane-mirror/ porro prism resonator and...directed by prism B to an expanding telescope, shared with the viewing system of the designator. The actual, unfolded resonator length is approxi...was performed based on using a plane- parallel cavity consisting of a 47% reflectivity output coupler, porro - prism reflector, and the same LiNb03

Ring resonator based narrow-linewidth semiconductor lasers

NASA Technical Reports Server (NTRS)

Ksendzov, Alexander (Inventor)

2005-01-01

The present invention is a method and apparatus for using ring resonators to produce narrow linewidth hybrid semiconductor lasers. According to one embodiment of the present invention, the narrow linewidths are produced by combining the semiconductor gain chip with a narrow pass band external feedback element. The semi conductor laser is produced using a ring resonator which, combined with a Bragg grating, acts as the external feedback element. According to another embodiment of the present invention, the proposed integrated optics ring resonator is based on plasma enhanced chemical vapor deposition (PECVD) SiO.sub.2 /SiON/SiO.sub.2 waveguide technology.

Design and simulation of a semiconductor chip-based visible - NIR spectrometer for Earth observation

NASA Astrophysics Data System (ADS)

Coote, J.; Woolliams, E.; Fox, N.; Goodyer, I. D.; Sweeney, S. J.

2014-03-01

We present the development of a novel semiconductor chip-based spectrometer for calibration of Earth observation instruments. The chip follows the Solo spectroscopy approach utilising an array of microdisk resonators evanescently coupled to a central waveguide. Each resonator is tuned to select out a specific wavelength from the incoming spectrum, and forms a p-i-n junction in which current is generated when light of the correct wavelength is present. In this paper we discuss important design aspects including the choice of semiconductor material, design of semiconductor quantum well structures for optical absorption, and design and optimisation of the waveguide and resonators.

XeCl excimer laser with new prism resonator configurations and its performance characteristics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benerji, N. S., E-mail: nsb@rrcat.gov.in, E-mail: bsingh@rrcat.gov.in; Singh, A.; Varshnay, N.

2015-07-15

New resonator cavity configurations, namely, the prism resonator and unstable prism resonator, are demonstrated for the first time in an excimer (XeCl) laser with interesting and novel results. High misalignment tolerance ∼50 mrad is achieved with considerably reduced beam divergence of less than ∼1 mrad without reduction in output power capabilities of the laser. The misalignment tolerance of ∼50 mrad is a dramatic improvement of ∼25 times compared to ∼2 mrad normally observed in standard excimer laser with plane-plane cavity. Increase in depth of focus from 3 mm to 5.5 mm was also achieved in case of prism resonator configurationmore » with an improvement of about 60%. Unstable prism resonator configuration is demonstrated here in this paper with further reduction in beam divergence to about 0.5 mrad using plano-convex lens as output coupler. The misalignment tolerance in case of unstable prism resonator was retained at about 30 mrad which is a high value compared to standard unstable resonators. The output beam spot was completely filled with flat-top profile with prism resonator configurations, which is desired for various material processing applications. Focusing properties and beam divergence in case of prism resonator have been investigated using SEM (scanning electron microscope) images. SEM images of the focused spot size (∼20 μm holes) on metal sheet indicate beam divergence of about 0.05 mrad which is about 1.5 times diffraction limit. Energy contained in this angle is thus sufficient for micro-machining applications. Clean and sharp edges of the micro-holes show high pointing stability with multiple shot exposures. Such characteristics of the excimer laser system will be extremely useful in micro-machining and other field applications.« less

XeCl excimer laser with new prism resonator configurations and its performance characteristics.

PubMed

Benerji, N S; Singh, A; Varshnay, N; Singh, Bijendra

2015-07-01

New resonator cavity configurations, namely, the prism resonator and unstable prism resonator, are demonstrated for the first time in an excimer (XeCl) laser with interesting and novel results. High misalignment tolerance ∼50 mrad is achieved with considerably reduced beam divergence of less than ∼1 mrad without reduction in output power capabilities of the laser. The misalignment tolerance of ∼50 mrad is a dramatic improvement of ∼25 times compared to ∼2 mrad normally observed in standard excimer laser with plane-plane cavity. Increase in depth of focus from 3 mm to 5.5 mm was also achieved in case of prism resonator configuration with an improvement of about 60%. Unstable prism resonator configuration is demonstrated here in this paper with further reduction in beam divergence to about 0.5 mrad using plano-convex lens as output coupler. The misalignment tolerance in case of unstable prism resonator was retained at about 30 mrad which is a high value compared to standard unstable resonators. The output beam spot was completely filled with flat-top profile with prism resonator configurations, which is desired for various material processing applications. Focusing properties and beam divergence in case of prism resonator have been investigated using SEM (scanning electron microscope) images. SEM images of the focused spot size (∼20 μm holes) on metal sheet indicate beam divergence of about 0.05 mrad which is about 1.5 times diffraction limit. Energy contained in this angle is thus sufficient for micro-machining applications. Clean and sharp edges of the micro-holes show high pointing stability with multiple shot exposures. Such characteristics of the excimer laser system will be extremely useful in micro-machining and other field applications.

FIBER AND INTEGRATED OPTICS, LASER APPLICATIONS, AND OTHER PROBLEMS IN QUANTUM ELECTRONICS: Numerical simulation of an unstable ring resonator with a Fourier phase corrector

NASA Astrophysics Data System (ADS)

Kliment'ev, S. I.; Kuprenyuk, V. I.; Lyubimov, V. V.; Sherstobitov, V. E.

1989-04-01

The results are given of calculations of the parameters of an unstable ring resonator with an internal angular selector based on a Fourier phase corrector. It is shown that the use of such a selector makes it possible to compensate partly for the effects of small-scale phase inhomogeneities and to reduce also the influence of the edge diffraction on the structure of the field in a resonator.

Phonon-wave-induced resonance fluorescence in semiconductor nanostructures: acoustoluminescence in the terahertz range.

PubMed

Ahn, K J; Milde, F; Knorr, A

2007-01-12

Acoustic wave excitation of semiconductor quantum dots generates resonance fluorescence of electronic intersublevel excitations. Our theoretical analysis predicts acoustoluminescence, in particular, a conversion of acoustic into electromagnetic THz waves over a broad spectral range.

Laser Beam and Resonator Calculations on Desktop Computers.

NASA Astrophysics Data System (ADS)

Doumont, Jean-Luc

There is a continuing interest in the design and calculation of laser resonators and optical beam propagation. In particular, recently, interest has increased in developing concepts such as one-sided unstable resonators, supergaussian reflectivity profiles, diode laser modes, beam quality concepts, mode competition, excess noise factors, and nonlinear Kerr lenses. To meet these calculation needs, I developed a general-purpose software package named PARAXIA ^{rm TM}, aimed at providing optical scientists and engineers with a set of powerful design and analysis tools that provide rapid and accurate results and are extremely easy to use. PARAXIA can handle separable paraxial optical systems in cartesian or cylindrical coordinates, including complex-valued and misaligned ray matrices, with full diffraction effects between apertures. It includes the following programs:. ABCD provides complex-valued ray-matrix and gaussian -mode analyses for arbitrary paraxial resonators and optical systems, including astigmatism and misalignment in each element. This program required that I generalize the theory of gaussian beam propagation to the case of an off-axis gaussian beam propagating through a misaligned, complex -valued ray matrix. FRESNEL uses FFT and FHT methods to propagate an arbitrary wavefront through an arbitrary paraxial optical system using Huygens' integral in rectangular or radial coordinates. The wavefront can be multiplied by an arbitrary mirror profile and/or saturable gain sheet on each successive propagation through the system. I used FRESNEL to design a one-sided negative-branch unstable resonator for a free -electron laser, and to show how a variable internal aperture influences the mode competition and beam quality in a stable cavity. VSOURCE implements the virtual source analysis to calculate eigenvalues and eigenmodes for unstable resonators with both circular and rectangular hard-edged mirrors (including misaligned rectangular systems). I used VSOURCE to show the validity of the virtual source approach (by comparing its results to those of FRESNEL), to study the properties of hard-edged unstable resonators, and to obtain numerical values of the excess noise factors in such resonators. VRM carries out mode calculations for gaussian variable-reflectivity-mirror lasers. It implements complicated analytical results that I derived to point out the large numerical value of the excess noise factor in geometrically unstable resonators.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, R.; Lu, R.; Gong, S.

We demonstrate a room-temperature semiconductor-based photodetector where readout is achieved using a resonant radio-frequency (RF) circuit consisting of a microstrip split-ring resonator coupled to a microstrip busline, fabricated on a semiconductor substrate. The RF resonant circuits are characterized at RF frequencies as function of resonator geometry, as well as for their response to incident IR radiation. The detectors are modeled analytically and using commercial simulation software, with good agreement to our experimental results. Though the detector sensitivity is weak, the detector architecture offers the potential for multiplexing arrays of detectors on a single read-out line, in addition to high speedmore » response for either direct coupling of optical signals to RF circuitry, or alternatively, carrier dynamics characterization of semiconductor, or other, material systems.« less

High Speed Laser with 100 Ghz Resonance Frequency

DTIC Science & Technology

2014-02-28

applications, such as opto - electronic oscillators . Recently, however, by optimizing the detuning frequency and injection ratio, we have shown enhanced...semiconductor lasers has been limited by relaxation oscillation frequency to < 40 GHz. By using strong optical injection locking, we report resonance...direct modulation bandwidth of semiconductor lasers. In a typical laser, the relaxation oscillation [resonance] frequency is a figure-of-merit that is a

Unstable-Resonator and Output-Coupling Design Study for Diffraction Radiation Generator Near-Millimeter Sources.

DTIC Science & Technology

1980-10-01

78-32 (June 1978). 11A. E. Siegman , Laser Focus (May 1971), 42-47. 12A. E. Siegman , Appl. Opt., 13 (February 1974), 353-367. 13A. E. Siegman and R. W...mode chart (from A. E. Siegman , Proc. IEEE, 53 (March 1965), 280). The most useful form of unstable resonator geometry for conven- tional lasers (not...optical breakdown, 12 the positive branch resonator is used most often with high energy gas laser systems. 4) 12A. E. Siegman , Appl. Opt., 13 (February 1974

Influence of turbulent atmosphere on laser beams from confocal unstable resonators

NASA Astrophysics Data System (ADS)

Peng, Yu-feng; Wang, Juan; Bi, Xiao-qun; Zhang, Ming-gao; Cheng, Zu-hai

2009-07-01

Based on the laser fields from a positive confocal unstable resonator (ab initio), the propagation characteristics of the beam through turbulent atmosphere are investigated by means of fast Fourier transform algorithm (FFT). To conveniently investigate the propagation characteristics of laser beam through the atmosphere, as far as known, in the previous many works, a mathematical expression was generally artificially predefined to represent the given laser beam, such as Gaussian beam, Hermite-cosh-Gaussian beam, flat topped beam, dark-hollow (annular) beam, etc. In this paper, by basing on the initial built in oscillation of a laser resonator, such as a positive confocal unstable resonator (CUR), we studied the intensity distributions of the output laser field to obtain the propagation characteristics of laser beam through the turbulent atmosphere as functions of different propagation distances. The results show that the turbulence will result in the degradation of the peak value of the laser intensity in the far field, the spread of the far field diagram patterns, and the beam quality characteristics greatly degraded.

Photo-excited multi-frequency terahertz switch based on a composite metamaterial structure

NASA Astrophysics Data System (ADS)

Ji, Hongyu; Zhang, Bo; Wang, Guocui; Wang, Wei; Shen, Jingling

2018-04-01

We propose a photo-excited tunable multi-frequency metamaterial (MM) switch that can be used in the terahertz region. This metamaterial switch is composed of a polyimide substrate and a hybrid metal-semiconductor square split-ring resonator (SRR) with two gaps, with various semiconductors placed in critical regions of the metallic resonator. By changing the incident pump power, we were able to tune the conductivity of the diverse semiconductors filling the gaps of the SRR, and by using an external exciting beam, we were able to modulate the resonant absorption properties of the composite metamaterial structure. We demonstrated the tunable multi-frequency metamaterial switch by irradiating the composite metamaterial structure with a pump laser. In addition, we proposed a tunable metamaterial switch based on a circular metallic split-ring resonator.

A study of the semiconductor compound СuAlO2 by the method of nuclear quadrupole resonance of Cu

NASA Astrophysics Data System (ADS)

Matukhin, V. L.; Khabibulin, I. Kh.; Shul'gin, D. A.; Smidt, S. V.

2012-07-01

The method of nuclear quadrupole resonance of Cu (NQR Cu) is used to study the samples of a semiconductor compound CuAlO2. The crystal structure of CuAlO2 belongs to the family of delafossite - the mineral of a basic CuFeO2 structure. Transparent semiconductor oxides, such as CuAlO2, have attracted recent attention as promising thermoelectric materials.

Tunable semiconductor lasers

NASA Technical Reports Server (NTRS)

Taghavi-Larigani, Shervin (Inventor); Vanzyl, Jakob J. (Inventor); Yariv, Amnon (Inventor)

2006-01-01

Tunable semiconductor lasers are disclosed requiring minimized coupling regions. Multiple laser embodiments employ ring resonators or ring resonator pairs using only a single coupling region with the gain medium are detailed. Tuning can be performed by changing the phase of the coupling coefficient between the gain medium and a ring resonator of the laser. Another embodiment provides a tunable laser including two Mach-Zehnder interferometers in series and a reflector coupled to a gain medium.

Transverse Mode Formation in Positive Branch Unstable Resonators.

DTIC Science & Technology

1983-08-01

UNSTABLE RESONATORS S. PERFORMING ORG11. REPORT NURSER 7. AUTNOR(q) S. CONTRACT OR GRANT NUMS1ER111) R. William Jones S. PERFORMING ORGANIZATION NAME AND...EIAO-IWETA .3WSTPOSCOS(TIOUTA) SOIC 725 710 J 24S6JWINT94p DATA 4 1* 1) t) ?AJI1*Mot MT1MPUMI’dSTPZ wwub**vSTP%-wI ’wSTPj 733 IU(ISIGN)7319?43,?40

Pump Diode Characterization for an Unstable Diode-Pumped Alkali Laser Resonator

DTIC Science & Technology

2013-03-01

2003. Petersen, A., and R. Lane, Second harmonic operation of diode-pumped Rb vapor lasers , Proc. of SPIE, 7005, 2008. Siegman , A. E., Lasers ...University Science Books, Sausalito, CA, 1986. Siegman , A. E., Defining, measuring and optimizing laser beam quality, Proc. of SPIE, 1868, 1993. Steck, D...PUMP DIODE CHARACTERIZATION FOR AN UNSTABLE DIODE-PUMPED ALKALI LASER RESONATOR THESIS Chad T. Taguba, Master Sergeant, USAF AFIT-ENP-13-M-33

Frequency stabilization and transverse mode discrimination in injection-seeded unstable resonator TEA CO2 lasers

NASA Technical Reports Server (NTRS)

Ancellet, G. M.; Menzies, R. T.; Brothers, A. M.

1987-01-01

Longitudinal mode selection by injection has been demonstrated as a viable technique for TEA-CO2 lasers with pulse energies of a Joule or greater. Once reliable generation of single-longitudinal-mode (SLM) pulses is obtained, the characteristics and the causes of intrapulse frequency variation can be studied. These include the effect of the decaying plasma, the thermal gradient due to the energy dissipation associated with the laser mechanism itself, and the pressure shift of the center frequency of the laser transition. The use of the positive-branch unstable resonator as an efficient means of coupling a discharge with large spatial dimensions to an optical cavity mode introduces another concern: namely, what can be done to emphasize transverse mode discrimination in an unstable resonator cavity while maintaining high coupling efficiency. These issues are discussed in this paper, and relevant experimental results are included.

Quasi-phase-matching and second-harmonic generation enhancement in a semiconductor microresonator array using slow-light effects

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dumeige, Yannick

We theoretically analyze the second-harmonic generation process in a sequence of unidirectionnaly coupled doubly resonant whispering gallery mode semiconductor resonators. By using a convenient design, it is possible to coherently sum the second-harmonic fields generated inside each resonator. We show that resonator coupling allows the bandwidth of the phase-matching curve to be increased with respect to single-resonator configurations simultaneously taking advantage of the resonant feature of the resonators. This quasi-phase-matching technique could be applied to obtain small-footprint nonlinear devices with large bandwidth and limited nonlinear losses. The results are discussed in the framework of the slow-light-effect enhancement of second-order opticalmore » nonlinearities.« less

Magneto-Transpots in Interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs

DTIC Science & Technology

2011-03-02

Woolard, "Far- infrared and Terahertz lasing based upon resonant and interband tunneling in InAs/GaSb heterostructure," Applied Physics Letter, vol. 98...REPORT FINAL REPORT: Magneto-Transpots in interband Resonant Tunneling Diodes (I-RTDs) and Dilute Magnetic Semiconductor (DMS) I-RTDs 14. ABSTRACT 16...diodes (RTDs). This DB-BG-RTD device will utilizes two distinct innovations. First, ultra-fast heavy-hole (HH) interband tunneling is leveraged to

Characterization of Strong Light-Matter Coupling in Semiconductor Quantum-Dot Microcavities via Photon-Statistics Spectroscopy

NASA Astrophysics Data System (ADS)

Schneebeli, L.; Kira, M.; Koch, S. W.

2008-08-01

It is shown that spectrally resolved photon-statistics measurements of the resonance fluorescence from realistic semiconductor quantum-dot systems allow for high contrast identification of the two-photon strong-coupling states. Using a microscopic theory, the second-rung resonance of Jaynes-Cummings ladder is analyzed and optimum excitation conditions are determined. The computed photon-statistics spectrum displays gigantic, experimentally robust resonances at the energetic positions of the second-rung emission.

Industrial 30-kW CO2 laser with fast axial gas flow and rf excitation

NASA Astrophysics Data System (ADS)

Habich, Uwe; Loosen, Peter; Hertzler, Christoph; Wollermann-Windgasse, Reinhard

1996-03-01

A CO2 laser with fast axial gas flow was set up and operated with a maximum cw output power above 30 kW. The laser makes use of 8 rf-excited discharges which were optimized regarding to the gas-flow, to the discharge homogeneity and to the optical properties of the gain medium. Results of experimental investigation of these topics are described as well as performance characteristics of the laser system equipped with a stable and an unstable resonator, respectively. With an unstable resonator and an aerodynamic window for the extraction of the beam the laser system gives a beam quality which is close to the diffraction limit for this type of resonator. Disregarding the difficulties which are related to the definition and measurement of beam quality for unstable resonators, the beam quality could be described as M2 equals 3. Measured far field intensity profiles in the focal plane of a focusing optics are presented as well as the beam propagation behavior near focus. First results of applications in materials processing are discussed.

Parametrically excited helicopter ground resonance dynamics with high blade asymmetries

NASA Astrophysics Data System (ADS)

Sanches, L.; Michon, G.; Berlioz, A.; Alazard, D.

2012-07-01

The present work is aimed at verifying the influence of high asymmetries in the variation of in-plane lead-lag stiffness of one blade on the ground resonance phenomenon in helicopters. The periodical equations of motions are analyzed by using Floquet's Theory (FM) and the boundaries of instabilities predicted. The stability chart obtained as a function of asymmetry parameters and rotor speed reveals a complex evolution of critical zones and the existence of bifurcation points at low rotor speed values. Additionally, it is known that when treated as parametric excitations; periodic terms may cause parametric resonances in dynamic systems, some of which can become unstable. Therefore, the helicopter is later considered as a parametrically excited system and the equations are treated analytically by applying the Method of Multiple Scales (MMS). A stability analysis is used to verify the existence of unstable parametric resonances with first and second-order sets of equations. The results are compared and validated with those obtained by Floquet's Theory. Moreover, an explanation is given for the presence of unstable motion at low rotor speeds due to parametric instabilities of the second order.

A metallic molybdenum dioxide with high stability for surface enhanced Raman spectroscopy

NASA Astrophysics Data System (ADS)

Zhang, Qiqi; Li, Xinshi; Ma, Qiang; Zhang, Qing; Bai, Hua; Yi, Wencai; Liu, Jingyao; Han, Jing; Xi, Guangcheng

2017-04-01

Compared with noble metals, semiconductors with surface plasmon resonance effect are another type of SERS substrate materials. The main obstacles so far are that the semiconducting materials are often unstable and easy to be further oxidized or decomposed by laser irradiating or contacting with corrosive substances. Here, we report that metallic MoO2 can be used as a SERS substrate to detect trace amounts of highly risk chemicals including bisphenol A (BPA), dichloropheno (DCP), pentachlorophenol (PCP) and so on. The minimum detectable concentration was 10-7 M and the maximum enhancement factor is up to 3.75 × 106. To the best of our knowledge, it may be the best among the metal oxides and even reaches or approaches to Au/Ag. The MoO2 shows an unexpected high oxidation resistance, which can even withstand 300 °C in air without further oxidation. The MoO2 material also can resist long etching of strong acid and alkali.

Wavelength-resonant surface-emitting semiconductor laser

DOEpatents

Brueck, Steven R. J.; Schaus, Christian F.; Osinski, Marek A.; McInerney, John G.; Raja, M. Yasin A.; Brennan, Thomas M.; Hammons, Burrell E.

1989-01-01

A wavelength resonant semiconductor gain medium is disclosed. The essential feature of this medium is a multiplicity of quantum-well gain regions separated by semiconductor spacer regions of higher bandgap. Each period of this medium consisting of one quantum-well region and the adjacent spacer region is chosen such that the total width is equal to an integral multiple of 1/2 the wavelength in the medium of the radiation with which the medium is interacting. Optical, electron-beam and electrical injection pumping of the medium is disclosed. This medium may be used as a laser medium for single devices or arrays either with or without reflectors, which may be either semiconductor or external.

Resonant Tunneling Spin Pump

NASA Technical Reports Server (NTRS)

Ting, David Z.

2007-01-01

The resonant tunneling spin pump is a proposed semiconductor device that would generate spin-polarized electron currents. The resonant tunneling spin pump would be a purely electrical device in the sense that it would not contain any magnetic material and would not rely on an applied magnetic field. Also, unlike prior sources of spin-polarized electron currents, the proposed device would not depend on a source of circularly polarized light. The proposed semiconductor electron-spin filters would exploit the Rashba effect, which can induce energy splitting in what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. Theoretical studies have suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling.

V-Assembly Dual-Head Efficient Resonator (VADER) for Remote Sensing Applications

NASA Technical Reports Server (NTRS)

Coyle, D. Barry; Kay, Richard B.; Stysley, Paul R.; Clark, Greg; Poulios, Demetrios; Frederickson, Robert; Blalock, Gordon; Arnold, Ed; Cory, Ken

2011-01-01

The V-Assembly Dual-head Efficient Resonator (VADER) is a diode pumped, Nd:YAG, Q-switched, positive branch unstable resonator that employs a split laser gain module designed for optimal efficiency and thermal lensing compensation.

Valence-band structure of the ferromagnetic semiconductor GaMnAs studied by spin-dependent resonant tunneling spectroscopy.

PubMed

Ohya, Shinobu; Muneta, Iriya; Hai, Pham Nam; Tanaka, Masaaki

2010-04-23

The valence-band structure and the Fermi level (E(F)) position of ferromagnetic-semiconductor GaMnAs are quantitatively investigated by electrically detecting the resonant tunneling levels of a GaMnAs quantum well (QW) in double-barrier heterostructures. The resonant level from the heavy-hole first state is clearly observed in the metallic GaMnAs QW, indicating that holes have a high coherency and that E(F) exists in the band gap. Clear enhancement of tunnel magnetoresistance induced by resonant tunneling is demonstrated in these double-barrier heterostructures.

Harmonic oscillators and resonance series generated by a periodic unstable classical orbit

NASA Technical Reports Server (NTRS)

Kazansky, A. K.; Ostrovsky, Valentin N.

1995-01-01

The presence of an unstable periodic classical orbit allows one to introduce the decay time as a purely classical magnitude: inverse of the Lyapunov index which characterizes the orbit instability. The Uncertainty Relation gives the corresponding resonance width which is proportional to the Planck constant. The more elaborate analysis is based on the parabolic equation method where the problem is effectively reduced to the multidimensional harmonic oscillator with the time-dependent frequency. The resonances form series in the complex energy plane which is equidistant in the direction perpendicular to the real axis. The applications of the general approach to various problems in atomic physics are briefly exposed.

How do classical particle-field systems become unstable? - The last physics problem that Ronald Davidson studied

NASA Astrophysics Data System (ADS)

Qin, Hong

2016-10-01

Many of the classical particle-field systems in (neutral and nonneutral) plasma physics and accelerator physics become unstable when the system parameters vary. How do these instabilities happen? It turns out, very interestingly, that all conservative systems become unstable by the same mechanism, i.e, the resonance between a positive- and a negative-action modes. And this is the only route that a stable system can become unstable. In this talk, I will use several examples in plasma physics and accelerator physics with finite and infinite degrees of freedom to illustrate the basic physical picture and the rigorous theoretical structure of the process. The features at the transition between stable and unstable regions in the parameter space are the fundamental characteristics of the underlying real Hamiltonian system and complex G-Hamiltonian system. The resonance between a positive- and a negative-action modes at the transition is the Krein collision well-known to mathematicians. Research supported by the U.S. Department of Energy (DE-AC02-09CH11466).

Theoretical investigation of the hyper-Raman scattering in hexagonal semiconductors under two-photon excitation near resonance with the An=2 exciton level

NASA Astrophysics Data System (ADS)

Semenova, L. E.

2018-04-01

The hyper-Raman scattering of light by LO-phonons under two-photon excitation near resonance with the An=2 exciton level in the wurtzite semiconductors A2B6 was theoretically investigated, taking into account the influence of the complex structure of the top valence band.

Emergence of resonant mode-locking via delayed feedback in quantum dot semiconductor lasers.

PubMed

Tykalewicz, B; Goulding, D; Hegarty, S P; Huyet, G; Erneux, T; Kelleher, B; Viktorov, E A

2016-02-22

With conventional semiconductor lasers undergoing external optical feedback, a chaotic output is typically observed even for moderate levels of the feedback strength. In this paper we examine single mode quantum dot lasers under strong optical feedback conditions and show that an entirely new dynamical regime is found consisting of spontaneous mode-locking via a resonance between the relaxation oscillation frequency and the external cavity repetition rate. Experimental observations are supported by detailed numerical simulations of rate equations appropriate for this laser type. The phenomenon constitutes an entirely new mode-locking mechanism in semiconductor lasers.

Runaway tails in magnetized plasmas

NASA Technical Reports Server (NTRS)

Moghaddam-Taaheri, E.; Vlahos, L.; Rowland, H. L.; Papadopoulos, K.

1985-01-01

The evolution of a runaway tail driven by a dc electric field in a magnetized plasma is analyzed. Depending on the strength of the electric field and the ratio of plasma to gyrofrequency, there are three different regimes in the evolution of the tail. The tail can be (1) stable with electrons accelerated to large parallel velocities, (2) unstable to Cerenkov resonance because of the depletion of the bulk and the formation of a positive slope, (3) unstable to the anomalous Doppler resonance instability driven by the large velocity anisotropy in the tail. Once an instability is triggered (Cerenkov or anomalous Doppler resonance) the tail relaxes into an isotropic distribution. The role of a convection type loss term is also discussed.

Mid-infrared tunable metamaterials

DOEpatents

Brener, Igal; Miao, Xiaoyu; Shaner, Eric A.; Passmore, Brandon Scott

2017-07-11

A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

Mid-infrared tunable metamaterials

DOEpatents

Brener, Igal; Miao, Xiaoyu; Shaner, Eric A; Passmore, Brandon Scott; Jun, Young Chul

2015-04-28

A mid-infrared tunable metamaterial comprises an array of resonators on a semiconductor substrate having a large dependence of dielectric function on carrier concentration and a semiconductor plasma resonance that lies below the operating range, such as indium antimonide. Voltage biasing of the substrate generates a resonance shift in the metamaterial response that is tunable over a broad operating range. The mid-infrared tunable metamaterials have the potential to become the building blocks of chip based active optical devices in mid-infrared ranges, which can be used for many applications, such as thermal imaging, remote sensing, and environmental monitoring.

Solid state pulsed power generator

DOEpatents

Tao, Fengfeng; Saddoughi, Seyed Gholamali; Herbon, John Thomas

2014-02-11

A power generator includes one or more full bridge inverter modules coupled to a semiconductor opening switch (SOS) through an inductive resonant branch. Each module includes a plurality of switches that are switched in a fashion causing the one or more full bridge inverter modules to drive the semiconductor opening switch SOS through the resonant circuit to generate pulses to a load connected in parallel with the SOS.

Feasibility of near-unstable cavities for future gravitational wave detectors

NASA Astrophysics Data System (ADS)

Wang, Haoyu; Dovale-Álvarez, Miguel; Collins, Christopher; Brown, Daniel David; Wang, Mengyao; Mow-Lowry, Conor M.; Han, Sen; Freise, Andreas

2018-01-01

Near-unstable cavities have been proposed as an enabling technology for future gravitational wave detectors, as their compact structure and large beam spots can reduce the coating thermal noise of the interferometer. We present a tabletop experiment investigating the behavior of an optical cavity as it is parametrically pushed to geometrical instability. We report on the observed degeneracies of the cavity's eigenmodes as the cavity becomes unstable and the resonance conditions become hyper-sensitive to mirror surface imperfections. A simple model of the cavity and precise measurements of the resonant frequencies allow us to characterize the stability of the cavity and give an estimate of the mirror astigmatism. The significance of these results for gravitational wave detectors is discussed, and avenues for further research are suggested.

Dominance of Plasmonic Resonant Energy Transfer over Direct Electron Transfer in Substantially Enhanced Water Oxidation Activity of BiVO4 by Shape-Controlled Au Nanoparticles.

PubMed

Lee, Mi Gyoung; Moon, Cheon Woo; Park, Hoonkee; Sohn, Woonbae; Kang, Sung Bum; Lee, Sanghan; Choi, Kyoung Jin; Jang, Ho Won

2017-10-01

The performance of plasmonic Au nanostructure/metal oxide heterointerface shows great promise in enhancing photoactivity, due to its ability to confine light to the small volume inside the semiconductor and modify the interfacial electronic band structure. While the shape control of Au nanoparticles (NPs) is crucial for moderate bandgap semiconductors, because plasmonic resonance by interband excitations overlaps above the absorption edge of semiconductors, its critical role in water splitting is still not fully understood. Here, first, the plasmonic effects of shape-controlled Au NPs on bismuth vanadate (BiVO 4 ) are studied, and a largely enhanced photoactivity of BiVO 4 is reported by introducing the octahedral Au NPs. The octahedral Au NP/BiVO 4 achieves 2.4 mA cm -2 at the 1.23 V versus reversible hydrogen electrode, which is the threefold enhancement compared to BiVO 4 . It is the highest value among the previously reported plasmonic Au NPs/BiVO 4 . Improved photoactivity is attributed to the localized surface plasmon resonance; direct electron transfer (DET), plasmonic resonant energy transfer (PRET). The PRET can be stressed over DET when considering the moderate bandgap semiconductor. Enhanced water oxidation induced by the shape-controlled Au NPs is applicable to moderate semiconductors, and shows a systematic study to explore new efficient plasmonic solar water splitting cells. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of an electron paramagnetic resonance methodology for studying the photo-generation of reactive species in semiconductor nano-particle assembled films

NASA Astrophysics Data System (ADS)

Twardoch, Marek; Messai, Youcef; Vileno, Bertrand; Hoarau, Yannick; Mekki, Djamel E.; Felix, Olivier; Turek, Philippe; Weiss, Jean; Decher, Gero; Martel, David

2018-06-01

An experimental approach involving electron paramagnetic resonance is proposed for studying photo-generated reactive species in semiconductor nano-particle-based films deposited on the internal wall of glass capillaries. This methodology is applied here to nano-TiO2 and allows a semi-quantitative analysis of the kinetic evolutions of radical production using a spin scavenger probe.

Enhanced THz extinction in arrays of resonant semiconductor particles.

PubMed

Schaafsma, Martijn C; Georgiou, Giorgos; Rivas, Jaime Gómez

2015-09-21

We demonstrate experimentally the enhanced THz extinction by periodic arrays of resonant semiconductor particles. This phenomenon is explained in terms of the radiative coupling of localized resonances with diffractive orders in the plane of the array (Rayleigh anomalies). The experimental results are described by numerical calculations using a coupled dipole model and by Finite-Difference in Time-Domain simulations. An optimum particle size for enhancing the extinction efficiency of the array is found. This optimum is determined by the frequency detuning between the localized resonances in the individual particles and the Rayleigh anomaly. The extinction calculations and measurements are also compared to near-field simulations illustrating the optimum particle size for the enhancement of the near-field.

Andreev reflection enhancement in semiconductor-superconductor structures

NASA Astrophysics Data System (ADS)

Bouscher, Shlomi; Winik, Roni; Hayat, Alex

2018-02-01

We develop a theoretical approach for modeling a wide range of semiconductor-superconductor structures with arbitrary potential barriers and a spatially dependent superconducting order parameter. We demonstrate asymmetry in the conductance spectrum as a result of a Schottky barrier shape. We further show that the Andreev reflection process can be significantly enhanced through resonant tunneling with appropriate barrier configuration, which can incorporate the Schottky barrier as a contributing component of the device. Moreover, we show that resonant tunneling can be achieved in superlattice structures as well. These theoretically demonstrated effects along with our modeling approach enable much more efficient Cooper pair injection into semiconductor-superconductor structures, including superconducting optoelectronic devices.

Quantum theory of the electronic and optical properties of low-dimensional semiconductor systems

NASA Astrophysics Data System (ADS)

Lau, Wayne Heung

This thesis examines the electronic and optical properties of low-dimensional semiconductor systems. A theory is developed to study the electron-hole generation-recombination process of type-II semimetallic semiconductor heterojunctions based on a 3 x 3 k·p matrix Hamiltonian (three-band model) and an 8 x 8 k·p matrix Hamiltonian (eight-band model). A novel electron-hole generation and recombination process, which is called activationless generation-recombination process, is predicted. It is demonstrated that the current through the type-II semimetallic semiconductor heterojunctions is governed by the activationless electron-hole generation-recombination process at the heterointerfaces, and that the current-voltage characteristics are essentially linear. A qualitative agreement between theory and experiments is observed. The numerical results of the eight-band model are compared with those of the threeband model. Based on a lattice gas model, a theory is developed to study the influence of a random potential on the ionization equilibrium conditions for bound electron-hole pairs (excitons) in III--V semiconductor heterostructures. It is demonstrated that ionization equilibrium conditions for bound electron-hole pairs change drastically in the presence of strong disorder. It is predicted that strong disorder promotes dissociation of excitons in III--V semiconductor heterostructures. A theory of polariton (photon dressed by phonon) spontaneous emission in a III--V semiconductor doped with semiconductor quantum dots (QDs) or quantum wells (QWs) is developed. For the first time, superradiant and subradiant polariton spontaneous emission phenomena in a polariton-QD (QW) coupled system are predicted when the resonance energies of the two identical QDs (QWs) lie outside the polaritonic energy gap. It is also predicted that when the resonance energies of the two identical QDs (QWs) lie inside the polaritonic energy gap, spontaneous emission of polariton in the polariton-QD (QW) coupled system is inhibited and polariton bound states are formed within the polaritonic energy gap. A theory is also developed to study the polariton eigenenergy spectrum, polariton effective mass, and polariton spectral density of N identical semiconductor QDs (QWs) or a superlattice (SL) placed inside a III--V semiconductor. A polariton-impurity band lying within the polaritonic energy gap of the III--V semiconductor is predicted when the resonance energies of the QDs (QWs) lie inside the polaritonic energy gap. Hole-like polariton effective mass of the polariton-impurity band is predicted. It is also predicted that the spectral density of the polariton has a Lorentzian shape if the resonance energies of the QDs (QWs) lie outside the polaritonic gap.

Zero energy resonance and the logarithmically slow decay of unstable multilevel systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyamoto, Manabu

2006-08-15

The long time behavior of the reduced time evolution operator for unstable multilevel systems is studied based on the N-level Friedrichs model in the presence of a zero energy resonance. The latter means the divergence of the resolvent at zero energy. Resorting to the technique developed by Jensen and Kato [Duke Math. J. 46, 583 (1979)], the zero energy resonance of this model is characterized by the zero energy eigenstate that does not belong to the Hilbert space. It is then shown that for some kinds of the rational form factors the logarithmically slow decay proportional to (log t){sup -1}more » of the reduced time evolution operator can be realized.« less

Modulation Effects in Multi-Section Semiconductor Lasers (Postprint)

DTIC Science & Technology

2013-01-01

resonant modulation of semiconductor lasers beyond relaxation oscillation frequency,” Appl. Phys. Lett., 63, 1459–1461 (1993). [26] J. Helms and K. Petermann ...5, 4–6 (1993). [28] K. Petermann , “External optical feedback phenomena in semiconductor lasers,” IEEE J. Sel. Top. Quantum Elec- tron., 1, 480–489

Designing new classes of high-power, high-brightness VECSELs

NASA Astrophysics Data System (ADS)

Moloney, J. V.; Zakharian, A. R.; Hader, J.; Koch, Stephan W.

2005-10-01

Optically-pumped vertical external cavity semiconductor lasers offer the exciting possibility of designing kW-class solid state lasers that provide significant advantages over their doped YAG, thin-disk YAG and fiber counterparts. The basic VECSEL/OPSL (optically-pumped semiconductor laser) structure consists of a very thin (approximately 6 micron thick) active mirror consisting of a DBR high-reflectivity stack followed by a multiple quantum well resonant periodic (RPG) structure. An external mirror (reflectivity typically between 94%-98%) provides conventional optical feedback to the active semiconductor mirror chip. The "cold" cavity needs to be designed to take into account the semiconductor sub-cavity resonance shift with temperature and, importantly, the more rapid shift of the semiconductor material gain peak with temperature. Thermal management proves critical in optimizing the device for serious power scaling. We will describe a closed-loop procedure that begins with a design of the semiconductor active epi structure. This feeds into the sub-cavity optimization, optical and thermal transport within the active structure and thermal transport though the various heat sinking elements. Novel schemes for power scaling beyond current record performances will be discussed.

Enhancing the Bandwidth of Gravitational-Wave Detectors with Unstable Optomechanical Filters

NASA Astrophysics Data System (ADS)

Miao, Haixing; Ma, Yiqiu; Zhao, Chunnong; Chen, Yanbei

2015-11-01

Advanced interferometric gravitational-wave detectors use optical cavities to resonantly enhance their shot-noise-limited sensitivity. Because of positive dispersion of these cavities—signals at different frequencies pick up different phases, there is a tradeoff between the detector bandwidth and peak sensitivity, which is a universal feature for quantum measurement devices having resonant cavities. We consider embedding an active unstable filter inside the interferometer to compensate the phase, and using feedback control to stabilize the entire system. We show that this scheme in principle can enhance the bandwidth without sacrificing the peak sensitivity. However, the unstable filter under our current consideration is a cavity-assisted optomechanical device operating in the instability regime, and the thermal fluctuation of the mechanical oscillator puts a very stringent requirement on the environmental temperature and the mechanical quality factor.

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE PAGES

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.; ...

2016-01-26

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Nonlinear terahertz devices utilizing semiconducting plasmonic metamaterials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Seren, Huseyin R.; Zhang, Jingdi; Keiser, George R.

The development of responsive metamaterials has enabled the realization of compact tunable photonic devices capable of manipulating the amplitude, polarization, wave vector and frequency of light. Integration of semiconductors into the active regions of metallic resonators is a proven approach for creating nonlinear metamaterials through optoelectronic control of the semiconductor carrier density. Metal-free subwavelength resonant semiconductor structures offer an alternative approach to create dynamic metamaterials. We present InAs plasmonic disk arrays as a viable resonant metamaterial at terahertz frequencies. Importantly, InAs plasmonic disks exhibit a strong nonlinear response arising from electric field-induced intervalley scattering, resulting in a reduced carrier mobilitymore » thereby damping the plasmonic response. here, we demonstrate nonlinear perfect absorbers configured as either optical limiters or saturable absorbers, including flexible nonlinear absorbers achieved by transferring the disks to polyimide films. Nonlinear plasmonic metamaterials show potential for use in ultrafast terahertz (THz) optics and for passive protection of sensitive electromagnetic devices.« less

Improved interface properties of Ge metal-oxide-semiconductor capacitor with TaTiO gate dielectric by using in situ TaON passivation interlayer

NASA Astrophysics Data System (ADS)

Ji, F.; Xu, J. P.; Liu, J. G.; Li, C. X.; Lai, P. T.

2011-05-01

TaON is in situ formed as a passivating interlayer in Ge metal-oxide-semiconductor (MOS) capacitors with high-k TaTiO gate dielectric fabricated simply by alternate sputtering of Ta and Ti. Also, postdeposition annealing is performed in wet N2 to suppress the growth of unstable GeOx at the Ge surface. As a result, excellent electrical properties of the Ge MOS devices are demonstrated, such as high equivalent dielectric constant (22.1), low interface-state density (7.3×1011 cm-2 eV), small gate leakage current (8.6×10-4 A cm-2 at Vg-Vfb=1 V), and high device reliability. Transmission electron microscopy and x-ray photoelectron spectroscopy support that all these should be attributed to the fact that the nitrogen barrier in the TaON interlayer can effectively block the interdiffusions of Ge and Ta, and the wet-N2 anneal can significantly suppress the growth of unstable low-k GeOx.

Magnetic Resonance Imaging and Arthroscopic Correlation in Shoulder Instability.

PubMed

Knapik, Derrick M; Voos, James E

2017-12-01

The shoulder is the most inherently unstable joint in the body, prone to high rates of anterior dislocations with subsequent injuries to soft tissue and bony stabilizing structures, resulting in recurrent shoulder instability. Advanced imaging utilizing magnetic resonance (MR) imaging and MR arthrography allows for thorough evaluation of lesions present in the unstable shoulder and is critical for preoperative planning. Arthroscopic shoulder stabilization in the appropriately selected patient can help restore stability and function. This review highlights correlations between MR imaging and arthroscopy of the most commonly reported soft tissue and bony injuries present in patients with shoulder instability.

Late Quaternary to Holocene Geology, Geomorphology and Glacial History of Dawson Creek and Surrounding area, Northeast British Columbia, Canada

NASA Astrophysics Data System (ADS)

Henry, Edward Trowbridge

Semiconductor quantum dots in silicon demonstrate exceptionally long spin lifetimes as qubits and are therefore promising candidates for quantum information processing. However, control and readout techniques for these devices have thus far employed low frequency electrons, in contrast to high speed temperature readout techniques used in other qubit architectures, and coupling between multiple quantum dot qubits has not been satisfactorily addressed. This dissertation presents the design and characterization of a semiconductor charge qubit based on double quantum dot in silicon with an integrated microwave resonator for control and readout. The 6 GHz resonator is designed to achieve strong coupling with the quantum dot qubit, allowing the use of circuit QED control and readout techniques which have not previously been applicable to semiconductor qubits. To achieve this coupling, this document demonstrates successful operation of a novel silicon double quantum dot design with a single active metallic layer and a coplanar stripline resonator with a bias tee for dc excitation. Experiments presented here demonstrate quantum localization and measurement of both electrons on the quantum dot and photons in the resonator. Further, it is shown that the resonator-qubit coupling in these devices is sufficient to reach the strong coupling regime of circuit QED. The details of a measurement setup capable of performing simultaneous low noise measurements of the resonator and quantum dot structure are also presented here. The ultimate aim of this research is to integrate the long coherence times observed in electron spins in silicon with the sophisticated readout architectures available in circuit QED based quantum information systems. This would allow superconducting qubits to be coupled directly to semiconductor qubits to create hybrid quantum systems with separate quantum memory and processing components.

Evanescent Microwave Probes on High-Resistivity Silicon and its Application in Characterization of Semiconductors

NASA Technical Reports Server (NTRS)

Tabib-Azar, M.; Akinwande, D.; Ponchak, George E.; LeClair, S. R.

1999-01-01

In this article we report the design, fabrication, and characterization of very high quality factor 10 GHz microstrip resonators on high-resistivity (high-rho) silicon substrates. Our experiments show that an external quality factor of over 13 000 can be achieved on microstripline resonators on high-rho silicon substrates. Such a high Q factor enables integration of arrays of previously reported evanescent microwave probe (EMP) on silicon cantilever beams. We also demonstrate that electron-hole pair recombination and generation lifetimes of silicon can be conveniently measured by illuminating the resonator using a pulsed light. Alternatively, the EMP was also used to nondestructively monitor excess carrier generation and recombination process in a semiconductor placed near the two-dimensional resonator.

Semiconductor technology program. Progress briefs

NASA Technical Reports Server (NTRS)

Bullis, W. M.

1980-01-01

Measurement technology for semiconductor materials, process control, and devices is reviewed. Activities include: optical linewidth and thermal resistance measurements; device modeling; dopant density profiles; resonance ionization spectroscopy; and deep level measurements. Standardized oxide charge terminology is also described.

The Electromechanical Behavior of a Micro-Ring Driven by Traveling Electrostatic Force

PubMed Central

Ye, Xiuqian; Chen, Yibao; Chen, Da-Chih; Huang, Kuo-Yi; Hu, Yuh-Chung

2012-01-01

There is no literature mentioning the electromechanical behavior of micro structures driven by traveling electrostatic forces. This article is thus the first to present the dynamics and stabilities of a micro-ring subjected to a traveling electrostatic force. The traveling electrostatic force may be induced by sequentially actuated electrodes which are arranged around the flexible micro-ring. The analysis is based on a linearized distributed model considering the electromechanical coupling effects between electrostatic force and structure. The micro-ring will resonate when the traveling speeds of the electrostatic force approach some critical speeds. The critical speeds are equal to the ratio of the natural frequencies to the wave number of the correlative natural mode of the ring. Apart from resonance, the ring may be unstable at some unstable traveling speeds. The unstable regions appear not only near the critical speeds, but also near some fractions of some critical speeds differences. Furthermore the unstable regions expand with increasing driving voltage. This article may lead to a new research branch on electrostatic-driven micro devices. PMID:22438705

Tuneable photonic device including an array of metamaterial resonators

DOEpatents

Brener, Igal; Wanke, Michael; Benz, Alexander

2017-03-14

A photonic apparatus includes a metamaterial resonator array overlying and electromagnetically coupled to a vertically stacked plurality of quantum wells defined in a semiconductor body. An arrangement of electrical contact layers is provided for facilitating the application of a bias voltage across the quantum well stack. Those portions of the semiconductor body that lie between the electrical contact layers are conformed to provide an electrically conductive path between the contact layers and through the quantum well stack.

Visualization and simulation of density driven convection in porous media using magnetic resonance imaging

NASA Astrophysics Data System (ADS)

Montague, James A.; Pinder, George F.; Gonyea, Jay V.; Hipko, Scott; Watts, Richard

2018-05-01

Magnetic resonance imaging is used to observe solute transport in a 40 cm long, 26 cm diameter sand column that contained a central core of low permeability silica surrounded by higher permeability well-sorted sand. Low concentrations (2.9 g/L) of Magnevist, a gadolinium based contrast agent, produce density driven convection within the column when it starts in an unstable state. The unstable state, for this experiment, exists when higher density contrast agent is present above the lower density water. We implement a numerical model in OpenFOAM to reproduce the observed fluid flow and transport from a density difference of 0.3%. The experimental results demonstrate the usefulness of magnetic resonance imaging in observing three-dimensional gravity-driven convective-dispersive transport behaviors in medium scale experiments.

Axicon based conical resonators with high power copper vapor laser.

PubMed

Singh, Bijendra; Subramaniam, V V; Daultabad, S R; Chakraborty, Ashim

2010-07-01

We report for the first time the performance of axicon based conical resonators (ABCRs) in a copper vapor laser, with novel results. The unstable conical resonator comprising of conical mirror (reflecting axicon) with axicon angle approximately pi/18, cone angle approximately 160 degrees, and a convex mirror of 60 cm radius of curvature was effective in reducing the average beam divergence to approximately 0.15 mrad (approximately 25 fold reduction compared to standard multimode plane-plane cavity) with output power of approximately 31 W. Extraction efficiency of approximately 50%-60% and beam divergence of <1 mrad was achieved in other stable ABCR configurations using flat and concave mirrors with the axicon. This is a significant improvement compared to 4-5 mrad normally observed in conventional stable resonators in copper vapor lasers. The conical resonators with copper vapor laser provide high misalignment tolerance beta approximately 4-5 mrad where beta is the tilt angle of the conical mirror from optimum position responsible for approximately 20% decline in laser power. The depth of focus d was approximately three times larger in case of conical resonator as compared to that of standard spherical unstable resonator under similar beam divergence and focusing conditions.

Unstable domains of tearing and Kelvin-Helmholtz instabilities in a rotating cylindrical plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fan, D. M.; Wei, L.; Wang, Z. X., E-mail: zxwang@dlut.edu.cn

2014-09-15

Effects of poloidal rotation profile on tearing and Kelvin-Helmholtz (KH) instabilities in a cylindrical plasma are investigated by using a reduced magnetohydrodynamic model. Since the poloidal rotation has different effects on the tearing and KH modes in different rotation regimes, four unstable domains are numerically identified, i.e., the destabilized tearing mode domain, stabilized tearing mode domain, stable-window domain, and unstable KH mode domain. It is also found that when the rotation layer is in the outer region of the rational surface, the stabilizing role of the rotation can be enhanced so significantly that the stable window domain is enlarged. Moreover,more » Alfvén resonances can be induced by the tearing and KH modes in such rotating plasmas. Radially wide profiles of current and vorticity perturbations can be formed when multiple current sheets on different resonance positions are coupled together.« less

Quantized conductance doubling and hard gap in a two-dimensional semiconductor-superconductor heterostructure.

PubMed

Kjaergaard, M; Nichele, F; Suominen, H J; Nowak, M P; Wimmer, M; Akhmerov, A R; Folk, J A; Flensberg, K; Shabani, J; Palmstrøm, C J; Marcus, C M

2016-09-29

Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin-orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e 2 /h, consistent with theory. The hard-gap semiconductor-superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems.

Theory of raman scattering from molecules adsorbed at semiconductor surfaces

NASA Astrophysics Data System (ADS)

Ueba, H.

1983-09-01

A theory is presented to calculate the Raman polarizability of an adsorbed molecule at a semiconductor surface, where the electronic excitation in the molecular site interacts with excitons (elementary excitations in the semiconductor) through non-radiative energy transfer between them, in an intermediate state in the Raman scattering process. The Raman polarizability thus calculated is found to exhibit a peak at the energy corresponding to a resonant excitation of excitons, thereby suggesting the possibility of surface enhanced Raman scattering on semiconductor surfaces. The mechanism studied here can also give an explanation of a recent observation of the Raman excitation profiles of p-NDMA and p-DMAAB adsorbed on ZnO or TiO 2, where those profiles were best described by assuming a resonant intermediate state of the exciton transition in the semiconductors. It is also demonstrated that in addition to vibrational Raman scattering, excitonic Raman scattering of adsorbed molecules will occur in the coupled molecule-semiconductor system, where the molecular returns to its ground electronic state by leaving an exciton in the semiconductor. A spectrum of the excitonic Raman scattering is expected to appear in the background of the vibrational Raman band and to be characterized by the electronic structure of excitons. A desirable experiment is suggested for an examination of the theory.

Coupled-resonator vertical-cavity lasers with two active gain regions

DOEpatents

Fischer, Arthur J.; Choquette, Kent D.; Chow, Weng W.

2003-05-20

A new class of coupled-resonator vertical-cavity semiconductor lasers has been developed. These lasers have multiple resonant cavities containing regions of active laser media, resulting in a multi-terminal laser component with a wide range of novel properties.

Electromagnetic field enhancement effects in group IV semiconductor nanowires. A Raman spectroscopy approach

NASA Astrophysics Data System (ADS)

Pura, J. L.; Anaya, J.; Souto, J.; Prieto, A. C.; Rodríguez, A.; Rodríguez, T.; Periwal, P.; Baron, T.; Jiménez, J.

2018-03-01

Semiconductor nanowires (NWs) are the building blocks of future nanoelectronic devices. Furthermore, their large refractive index and reduced dimension make them suitable for nanophotonics. The study of the interaction between nanowires and visible light reveals resonances that promise light absorption/scattering engineering for photonic applications. Micro-Raman spectroscopy has been used as a characterization tool for semiconductor nanowires. The light/nanowire interaction can be experimentally assessed through the micro-Raman spectra of individual nanowires. As compared to both metallic and dielectric nanowires, semiconductor nanowires add additional tools for photon engineering. In particular, one can grow heterostructured nanowires, both axial and radial, and also one could modulate the doping level and the surface condition among other factors than can affect the light/NW interaction. We present herein a study of the optical response of group IV semiconductor nanowires to visible photons. The study is experimentally carried out through micro-Raman spectroscopy of different group IV nanowires, both homogeneous and axially heterostructured (SiGe/Si). The results are analyzed in terms of the electromagnetic modelling of the light/nanowire interaction using finite element methods. The presence of axial heterostructures is shown to produce electromagnetic resonances promising new photon engineering capabilities of semiconductor nanowires.

BRIEF COMMUNICATIONS: Q switching of a resonator by the metal-semiconductor phase transition

NASA Astrophysics Data System (ADS)

Bugaev, A. A.; Zakharchenya, Boris P.; Chudnovskiĭ, F. A.

1981-12-01

An experimental study was made of Q switching in a resonator by a mirror with a nonlinear reflection coefficient. This mirror was an interference reflecting structure containing a vanadium oxide film capable of undergoing a metal-semiconductor transition. The nonlinearity of the reflection coefficient was due to initiation of this phase transition by laser radiation. A determination was made of the parameters of a giant radiation pulse obtained using such a passive switch with a vanadium oxide film.

Theory of electrically controlled resonant tunneling spin devices

NASA Technical Reports Server (NTRS)

Ting, David Z. -Y.; Cartoixa, Xavier

2004-01-01

We report device concepts that exploit spin-orbit coupling for creating spin polarized current sources using nonmagnetic semiconductor resonant tunneling heterostructures, without external magnetic fields. The resonant interband tunneling psin filter exploits large valence band spin-orbit interaction to provide strong spin selectivity.

A Weakly Nonlinear Model for the Damping of Resonantly Forced Density Waves in Dense Planetary Rings

NASA Astrophysics Data System (ADS)

Lehmann, Marius; Schmidt, Jürgen; Salo, Heikki

2016-10-01

In this paper, we address the stability of resonantly forced density waves in dense planetary rings. Goldreich & Tremaine have already argued that density waves might be unstable, depending on the relationship between the ring’s viscosity and the surface mass density. In the recent paper Schmidt et al., we have pointed out that when—within a fluid description of the ring dynamics—the criterion for viscous overstability is satisfied, forced spiral density waves become unstable as well. In this case, linear theory fails to describe the damping, but nonlinearity of the underlying equations guarantees a finite amplitude and eventually a damping of the wave. We apply the multiple scale formalism to derive a weakly nonlinear damping relation from a hydrodynamical model. This relation describes the resonant excitation and nonlinear viscous damping of spiral density waves in a vertically integrated fluid disk with density dependent transport coefficients. The model consistently predicts density waves to be (linearly) unstable in a ring region where the conditions for viscous overstability are met. Sufficiently far away from the Lindblad resonance, the surface mass density perturbation is predicted to saturate to a constant value due to nonlinear viscous damping. The wave’s damping lengths of the model depend on certain input parameters, such as the distance to the threshold for viscous overstability in parameter space and the ground state surface mass density.

Delay induced high order locking effects in semiconductor lasers

NASA Astrophysics Data System (ADS)

Kelleher, B.; Wishon, M. J.; Locquet, A.; Goulding, D.; Tykalewicz, B.; Huyet, G.; Viktorov, E. A.

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types-—a quantum dot based device and a quantum well based device—are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Delay induced high order locking effects in semiconductor lasers.

PubMed

Kelleher, B; Wishon, M J; Locquet, A; Goulding, D; Tykalewicz, B; Huyet, G; Viktorov, E A

2017-11-01

Multiple time scales appear in many nonlinear dynamical systems. Semiconductor lasers, in particular, provide a fertile testing ground for multiple time scale dynamics. For solitary semiconductor lasers, the two fundamental time scales are the cavity repetition rate and the relaxation oscillation frequency which is a characteristic of the field-matter interaction in the cavity. Typically, these two time scales are of very different orders, and mutual resonances do not occur. Optical feedback endows the system with a third time scale: the external cavity repetition rate. This is typically much longer than the device cavity repetition rate and suggests the possibility of resonances with the relaxation oscillations. We show that for lasers with highly damped relaxation oscillations, such resonances can be obtained and lead to spontaneous mode-locking. Two different laser types--a quantum dot based device and a quantum well based device-are analysed experimentally yielding qualitatively identical dynamics. A rate equation model is also employed showing an excellent agreement with the experimental results.

Visualization and simulation of density driven convection in porous media using magnetic resonance imaging.

PubMed

Montague, James A; Pinder, George F; Gonyea, Jay V; Hipko, Scott; Watts, Richard

2018-05-01

Magnetic resonance imaging is used to observe solute transport in a 40cm long, 26cm diameter sand column that contained a central core of low permeability silica surrounded by higher permeability well-sorted sand. Low concentrations (2.9g/L) of Magnevist, a gadolinium based contrast agent, produce density driven convection within the column when it starts in an unstable state. The unstable state, for this experiment, exists when higher density contrast agent is present above the lower density water. We implement a numerical model in OpenFOAM to reproduce the observed fluid flow and transport from a density difference of 0.3%. The experimental results demonstrate the usefulness of magnetic resonance imaging in observing three-dimensional gravity-driven convective-dispersive transport behaviors in medium scale experiments. Copyright © 2017 Elsevier B.V. All rights reserved.

Parametric nonfeedback resonance in period doubling systems

NASA Astrophysics Data System (ADS)

Pisarchik, A. N.; Corbalán, R.

1999-02-01

Slow periodic modulation of a control parameter in a period doubling system leads to an interaction between stable and unstable periodic orbits. This causes a resonance in the system response at the modulation frequency. The conditions for this resonance are studied through numerical simulations of quadratic map and laser equations. The results are confirmed by experiments in a CO2 laser with modulated losses.

Reflex ring laser amplifier system

DOEpatents

Summers, M.A.

1983-08-31

The invention is a method and apparatus for providing a reflex ring laser system for amplifying an input laser pulse. The invention is particularly useful in laser fusion experiments where efficient production of high-energy and high power laser pulses is required. The invention comprises a large aperture laser amplifier in an unstable ring resonator which includes a combination spatial filter and beam expander having a magnification greater than unity. An input pulse is injected into the resonator, e.g., through an aperture in an input mirror. The injected pulse passes through the amplifier and spatial filter/expander components on each pass around the ring. The unstable resonator is designed to permit only a predetermined number of passes before the amplified pulse exits the resonator. On the first pass through the amplifier, the beam fills only a small central region of the gain medium. On each successive pass, the beam has been expanded to fill the next concentric non-overlapping region of the gain medium.

Reduced magnetohydrodynamic theory of oblique plasmoid instabilities

NASA Astrophysics Data System (ADS)

Baalrud, S. D.; Bhattacharjee, A.; Huang, Y.-M.

2012-02-01

The three-dimensional nature of plasmoid instabilities is studied using the reduced magnetohydrodynamic equations. For a Harris equilibrium with guide field, represented by Bo=Bpotanh(x /λ)ŷ+Bzoẑ, a spectrum of modes are unstable at multiple resonant surfaces in the current sheet, rather than just the null surface of the poloidal field Byo(x)=Bpotanh(x /λ), which is the only resonant surface in 2D or in the absence of a guide field. Here, Bpo is the asymptotic value of the equilibrium poloidal field, Bzo is the constant equilibrium guide field, and λ is the current sheet width. Plasmoids on each resonant surface have a unique angle of obliquity θ ≡arctan(kz/ky). The resonant surface location for angle θ is xs=λarctanh(μ), where μ =tanθBzo/Bpo and the existence of a resonant surface requires |θ |

Measurement of laser quantum frequency fluctuations using a Pound-Drever stabilization system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Y.J.; Mussche, P.L.; Siegman, A.E.

1994-06-01

The authors describe a method for measuring the frequency fluctuation spectrum of a laser oscillator, especially the weak noise contributions in the wings of the spectrum, and apply this method to confirm the existence of large excess quantum frequency fluctuations in a laser oscillator using an unstable optical resonator. The measurement apparatus uses the Pound-Drever technique, which employs an RF phase modulator and a Fabry-Perot cavity to produce a sensitive high-speed frequency discrimination signal. The authors show that this signal can also be used to measure the quantum noise contributions to the frequency spectrum of a laser oscillator. Experimental measurementsmore » on a miniature diode-pumped Nd:YAG laser using a stable optical cavity closely match the predictions of the usual Schawlow-Townes theory, while the frequency fluctuations in a nearly identical laser employing an unstable optical resonator are approximately 1,300 times larger. These much larger fluctuations arise in part from the larger output coupling and cavity bandwidth of the unstable cavity, but they also appear to confirm a predicted excess spontaneous emission factor (Petermann excess noise factor) of [approx]180 times arising from the nonorthogonal transverse mode properties of the unstable cavity.« less

Dynamic detection of spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance (Conference Presentation)

NASA Astrophysics Data System (ADS)

Crowell, Paul A.; Liu, Changjiang; Patel, Sahil; Peterson, Tim; Geppert, Chad C.; Christie, Kevin; Stecklein, Gordon; Palmstrøm, Chris J.

2016-10-01

A distinguishing feature of spin accumulation in ferromagnet-semiconductor devices is its precession in a magnetic field. This is the basis for detection techniques such as the Hanle effect, but these approaches become ineffective as the spin lifetime in the semiconductor decreases. For this reason, no electrical Hanle measurement has been demonstrated in GaAs at room temperature. We show here that by forcing the magnetization in the ferromagnet to precess at resonance instead of relying only on the Larmor precession of the spin accumulation in the semiconductor, an electrically generated spin accumulation can be detected up to 300 K. The injection bias and temperature dependence of the measured spin signal agree with those obtained using traditional methods. We further show that this new approach enables a measurement of short spin lifetimes (< 100 psec), a regime that is not accessible in semiconductors using traditional Hanle techniques. The measurements were carried out on epitaxial Heusler alloy (Co2FeSi or Co2MnSi)/n-GaAs heterostructures. Lateral spin valve devices were fabricated by electron beam and photolithography. We compare measurements carried out by the new FMR-based technique with traditional non-local and three-terminal Hanle measurements. A full model appropriate for the measurements will be introduced, and a broader discussion in the context of spin pumping experimenments will be included in the talk. The new technique provides a simple and powerful means for detecting spin accumulation at high temperatures. Reference: C. Liu, S. J. Patel, T. A. Peterson, C. C. Geppert, K. D. Christie, C. J. Palmstrøm, and P. A. Crowell, "Dynamic detection of electron spin accumulation in ferromagnet-semiconductor devices by ferromagnetic resonance," Nature Communications 7, 10296 (2016). http://dx.doi.org/10.1038/ncomms10296

Interplay of Collective Excitations in Quantum Well Intersubband Resonances

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Ning, C. Z.

2003-01-01

Intersubband resonances in a semiconductor quantum well (QW) display some of the most fascinating features involving various collective excitations such as Fermi-edge singularity (FES) and intersubband plasmon (ISP). Using a density matrix approach, we treated many-body effects such as depolarization, vertex correction, and self-energy consistently for a two-subband system. We found a systematic change in resonance spectra from FES-dominated to ISP-dominated features, as QW- width or electron density is varied. Such an interplay between FES and ISP significantly changes both line shape and peak position of the absorption spectrum. In particular, we found that a cancellation of FES and ISP undresses the resonant responses and recovers the single-particle features of absorption for semiconductors with a strong nonparabolicity such as InAs, leading to a dramatic broadening of the absorption spectrum.

Thermo-optic locking of a semiconductor laser to a microcavity resonance.

PubMed

McRae, T G; Lee, Kwan H; McGovern, M; Gwyther, D; Bowen, W P

2009-11-23

We experimentally demonstrate thermo-optic locking of a semiconductor laser to an integrated toroidal optical microcavity. The lock is maintained for time periods exceeding twelve hours, without requiring any electronic control systems. Fast control is achieved by optical feedback induced by scattering centers within the microcavity, with thermal locking due to optical heating maintaining constructive interference between the cavity and the laser. Furthermore, the optical feedback acts to narrow the laser linewidth, with ultra high quality microtoroid resonances offering the potential for ultralow linewidth on-chip lasers.

Carrier-envelope-offset phase control of ultrafast optical rectification in resonantly excited semiconductors.

PubMed

Van Vlack, C; Hughes, S

2007-04-20

Ultrashort pulse light-matter interactions in a semiconductor are investigated within the regime of resonant optical rectification. Using pulse envelope areas of around 1.5-3.5 pi, a single-shot dependence on carrier-envelope-offset phase (CEP) is demonstrated for 5 fs pulse durations. A characteristic phase map is predicted for several different frequency regimes using parameters for thin-film GaAs. We subsequently suggest a possible technique to extract the CEP, in both sign and amplitude, using a solid state detector.

Silicon Photonics Transmitter with SOA and Semiconductor Mode-Locked Laser.

PubMed

Moscoso-Mártir, Alvaro; Müller, Juliana; Hauck, Johannes; Chimot, Nicolas; Setter, Rony; Badihi, Avner; Rasmussen, Daniel E; Garreau, Alexandre; Nielsen, Mads; Islamova, Elmira; Romero-García, Sebastián; Shen, Bin; Sandomirsky, Anna; Rockman, Sylvie; Li, Chao; Sharif Azadeh, Saeed; Lo, Guo-Qiang; Mentovich, Elad; Merget, Florian; Lelarge, François; Witzens, Jeremy

2017-10-24

We experimentally investigate an optical link relying on silicon photonics transmitter and receiver components as well as a single section semiconductor mode-locked laser as a light source and a semiconductor optical amplifier for signal amplification. A transmitter based on a silicon photonics resonant ring modulator, an external single section mode-locked laser and an external semiconductor optical amplifier operated together with a standard receiver reliably supports 14 Gbps on-off keying signaling with a signal quality factor better than 7 for 8 consecutive comb lines, as well as 25 Gbps signaling with a signal quality factor better than 7 for one isolated comb line, both without forward error correction. Resonant ring modulators and Germanium waveguide photodetectors are further hybridly integrated with chip scale driver and receiver electronics, and their co-operability tested. These experiments will serve as the basis for assessing the feasibility of a silicon photonics wavelength division multiplexed link relying on a single section mode-locked laser as a multi-carrier light source.

Excitation of nonaxisymmetric perturbations by the axisymmetric explosive magnetorotational instability in Keplerian discs

NASA Astrophysics Data System (ADS)

Shtemler, Yu.; Mond, M.; Liverts, E.

2018-02-01

The excitation of nonaxisymmetric quasi-resonant triads by clustering around a dominant axisymmetric explosively unstable magnetorotational instability (MRI) in Keplerian discs is investigated. Clustering, namely, the mutual interactions of a large number of quasi-resonant triads that are connected by a single dominant explosively unstable axisymmetric triad, is invoked in order to provide a viable mechanism for the stabilization of the explosive nature of the latter. The results, however, are of wider scope as the proposed clustering scenario also provides a strong mechanism for the excitation of high-amplitude nonaxisymmetric perturbations. The latter play a major role in the nonlinear evolution of the MRI on the route to fully developed turbulence.

Theory of excess noise in unstable resonator lasers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lamprecht, C.; Ritsch, H.

2002-11-01

We theoretically investigate the quantum dynamics of an unstable resonator laser. Compared to a stable cavity laser of equal gain and loss it exhibits a K-fold enhanced linewidth. This excess noise factor K is a measure of the nonorthogonality of the resonator eigenmodes and amounts to an enlargement of the quantum vacuum fluctuations. Using a quantum treatment starting from first principles based on the nonorthogonal eigenmodes, we put previous theoretical predictions onto a more firm ground. While we find a position-dependent enhancement of the spontaneous emission rate into an empty mode of only {radical}(K), the constructive quantum interference of themore » spontaneous emission with a single oscillating mode lets the Petermann excess noise factor K reappear in the phase diffusion (laser linewidth). Hence locally enhanced spontaneous emission as well as noise enhanced by interference (amplified spontaneous emission) play an equal role in the origin of excess noise.« less

Mechanic-Like Resonance in the Maxwell-Bloch Equations

ERIC Educational Resources Information Center

Meziane, Belkacem

2008-01-01

We show that, in their unstable regime of operation, the "Maxwell-Bloch" equations that describe light-matter interactions inside a bad-cavity-configured laser carry the same resonance properties as any externally driven mechanic or electric oscillator. This finding demonstrates that the nonlinearly coupled laser equations belong to the same…

Interband Lateral Resonant Tunneling Transistor.

DTIC Science & Technology

1994-11-14

INTERBAND LATERAL RESONANT TUNNELING TRANSISTOR 10 BACKGROUND OF THE INVENTION Field of the Invention This invention pertains to a tunneling transistor...and in 15 particular to an interband lateral resonant tunneling transistor. Description of Related Art Conventional semiconductor technologies are... interband lateral resonant tunneling transistor along the cross-section B-B of Figure 2c. Figure 4 is another preferred embodiment cross-sectional 20

Microwave Tunable Metamaterial Based on Semiconductor-to-Metal Phase Transition.

PubMed

Zhang, Guanqiao; Ma, He; Lan, Chuwen; Gao, Rui; Zhou, Ji

2017-07-18

A microwave tunable metamaterial utilizing the semiconductor-to-metal transition of vanadium dioxide (VO 2 ) is proposed, experimentally demonstrated and theoretically scrutinized. Basic concept of the design involves the combination of temperature-dependent hysteresis in VO 2 with resonance induced heating, resulting in a nonlinear response to power input. A lithographically prepared gold split-rings resonator (SRR) array deposited with VO 2 thin film is fabricated. Transmission spectra analysis shows a clear manifestation of nonlinearity, involving power-dependence of resonant frequency as well as transmitted intensity at both elevated and room temperature. Simulation performed with CST Microwave Studio conforms with the findings. The concept may find applications in transmission modulation and frequency tuning devices working under microwave frequency bands.

Effects of various cavity designs on the performance of a CO2 TEA laser with an unstable resonator

NASA Technical Reports Server (NTRS)

Zhao, Yanzeng; Post, Madison J.; Lawrence, T. R.

1992-01-01

Unstable resonator modeling has been carried out for an injection-seeded CO2 transversely excited atmosphere (TEA) laser in the NOAA/ERL/Wave Propagation Laboratory (WPL) Doppler lidar to examine the effects of various cavity designs on the quality of the output beam. The results show the effects of an injection pinhole, electrode spacing, mirror tilt, and radial reflectivity function of the output coupler. The electrode spacing in this laser has negligible effect. The injection pinhole, however, produces complicated structures in the output patterns. If the pinhole is removed, the output pattern is much smoother, and the frequency jitter is smaller. Misalignment sensitivity is very closely related to the radial reflectivity function. The superparabolic function provides the highest coupling efficiency, largest beam size, and good collimation, but produces a slightly higher misalignment sensitivity compared with a parabolic function. The Gaussian function provides the lowest misalignment sensitivity, but it produces the smallest beam size and the largest beam divergence. Also, the coupling coefficient is 50 percent lower than the optimum value. Methods for using a flat diffraction grating in unstable resonators are also investigated. The best way is to use a flat grating/positive lens combination to replace the back concave mirror.

Leveraging Nanocavity Harmonics for Control of Optical Processes in 2D Semiconductors

DOE PAGES

Akselrod, Gleb M.; Ming, Tian; Argyropoulos, Christos; ...

2015-04-07

Optical cavities with multiple tunable resonances have the potential to provide unique electromagnetic environments at two or more distinct wavelengths–critical for control of optical processes such as nonlinear generation, entangled photon generation, or photoluminescence (PL) enhancement. Here, we show a plasmonic nanocavity based on a nanopatch antenna design that has two tunable resonant modes in the visible spectrum separated by 350 nm and with line widths of ~60 nm. The importance of utilizing two resonances simultaneously is demonstrated by integrating monolayer MoS 2, a two-dimensional semiconductor, into the colloidally synthesized nanocavities. Here, we observe a 2000-fold enhancement in the PLmore » intensity of MoS 2– which has intrinsically low absorption and small quantum yield–at room temperature, enabled by the combination of tailored absorption enhancement at the first harmonic and PL quantum-yield enhancement at the fundamental resonance.« less

Nanonewton thrust measurement of photon pressure propulsion using semiconductor laser

NASA Astrophysics Data System (ADS)

Iwami, K.; Akazawa, Taku; Ohtsuka, Tomohiro; Nishida, Hiroyuki; Umeda, Norihiro

2011-09-01

To evaluate the thrust produced by photon pressure emitted from a 100 W class continuous-wave semiconductor laser, a torsion-balance precise thrust stand is designed and tested. Photon emission propulsion using semiconductor light sources attract interests as a possible candidate for deep-space propellant-less propulsion and attitude control system. However, the thrust produced by photon emission as large as several ten nanonewtons requires precise thrust stand. A resonant method is adopted to enhance the sensitivity of the biflier torsional-spring thrust stand. The torsional spring constant and the resonant of the stand is 1.245 × 10-3 Nm/rad and 0.118 Hz, respectively. The experimental results showed good agreement with the theoretical estimation. The thrust efficiency for photon propulsion was also defined. A maximum thrust of 499 nN was produced by the laser with 208 W input power (75 W of optical output) corresponding to a thrust efficiency of 36.7%. The minimum detectable thrust of the stand was estimated to be 2.62 nN under oscillation at a frequency close to resonance.

Mode calculations in unstable resonators with flowing saturable gain. 1:hermite-gaussian expansion.

PubMed

Siegman, A E; Sziklas, E A

1974-12-01

We present a procedure for calculating the three-dimensional mode pattern, the output beam characteristics, and the power output of an oscillating high-power laser taking into account a nonuniform, transversely flowing, saturable gain medium; index inhomogeneities inside the laser resonator; and arbitrary mirror distortion and misalignment. The laser is divided into a number of axial segments. The saturated gain-and-index variation. across each short segment is lumped into a complex gain profile across the midplane of that segment. The circulating optical wave within the resonator is propagated from midplane to midplane in free-space fashion and is multiplied by the lumped complex gain profile upon passing through each midplane. After each complete round trip of the optical wave inside the resonator, the saturated gain profiles are recalculated based upon the circulating fields in the cavity. The procedure when applied to typical unstable-resonator flowing-gain lasers shows convergence to a single distorted steady-state mode of oscillation. Typical near-field and far-field results are presented. Several empirical rules of thumb for finite truncated Hermite-Gaussian expansions, including an approximate sampling theorem, have been developed as part of the calculations.

Tunable Optical Sources.

DTIC Science & Technology

1980-11-01

finite aperture size 5. A. E. Siegman , "Unstable optical resonators for laser of the YAG rod, applications," Proc. IEEE 53, 217-287 (1965); "Unstable...Pumped LiNbO3 Tunable Source Radial Birefringent Element Computer Controlled Laser Attenuator Slab Configuration Laser Source 20. ABSTRACT (Continue on...have invented and demonstrated a computer controlled laser attenu- ator. .... Cont inued DD Il 7 1473 EDITION OF I NOV 01 IS OBSOLETE UNCLASSIFIEDAN

Integration of ambient seismic noise monitoring, displacement and meteorological measurements to infer the temperature-controlled long-term evolution of a complex prone-to-fall cliff

NASA Astrophysics Data System (ADS)

Colombero, C.; Baillet, L.; Comina, C.; Jongmans, D.; Larose, E.; Valentin, J.; Vinciguerra, S.

2018-06-01

Monitoring the temporal evolution of resonance frequencies and velocity changes detected from ambient seismic noise recordings can help in recognizing reversible and irreversible modifications within unstable rock volumes. With this aim, the long-term ambient seismic noise data set acquired at the potentially unstable cliff of Madonna delSasso (NW Italian Alps) was analysed in this study, using both spectral analysis and cross-correlation techniques. Noise results were integrated and compared with direct displacement measurements and meteorological data, to understand the long-term evolution of the cliff. No irreversible modifications in the stability of the site were detected over the monitored period. Conversely, daily and seasonal air temperature fluctuations were found to control resonance frequency values, amplitudes and directivities and to induce reversible velocity changes within the fractured rock mass. The immediate modification in the noise parameters due to temperature fluctuations was interpreted as the result of rock mass thermal expansion and contraction, inducing variations in the contact stiffness along the fractures isolating two unstable compartments. Differences with previous case studies were highlighted in the long-term evolution of noise spectral amplitudes and directivities, due to the complex 3-D fracture setting of the site and to the combined effects of the two unstable compartments.

Decreased oscillation threshold of a continuous-wave OPO using a semiconductor gain mirror.

PubMed

Siltanen, Mikael; Leinonen, Tomi; Halonen, Lauri

2011-09-26

We have constructed a singly resonant, continuous-wave optical parametric oscillator, where the signal beam resonates and is amplified by a semiconductor gain mirror. The gain mirror can significantly decrease the oscillation threshold compared to an identical system with conventional mirrors. The largest idler beam tuning range reached by changing the pump laser wavelength alone is from 3.6 to 4.7 µm. The single mode output power is limited but can be continuously scanned for at least 220 GHz by adding optical components in the oscillator cavity for increased stability. © 2011 Optical Society of America

Self-injection-locking linewidth narrowing in a semiconductor laser coupled to an external fiber-optic ring resonator

NASA Astrophysics Data System (ADS)

Korobko, Dmitry A.; Zolotovskii, Igor O.; Panajotov, Krassimir; Spirin, Vasily V.; Fotiadi, Andrei A.

2017-12-01

We develop a theoretical framework for modeling of semiconductor laser coupled to an external fiber-optic ring resonator. The developed approach has shown good qualitative agreement between theoretical predictions and experimental results for particular configuration of a self-injection locked DFB laser delivering narrow-band radiation. The model is capable of describing the main features of the experimentally measured laser outputs such as laser line narrowing, spectral shape of generated radiation, mode-hoping instabilities and makes possible exploring the key physical mechanisms responsible for the laser operation stability.

Room-temperature semiconductor heterostructure refrigeration

NASA Astrophysics Data System (ADS)

Chao, K. A.; Larsson, Magnus; Mal'shukov, A. G.

2005-07-01

With the proper design of semiconductor tunneling barrier structures, we can inject low-energy electrons via resonant tunneling, and take out high-energy electrons via a thermionic process. This is the operation principle of our semiconductor heterostructure refrigerator (SHR) without the need of applying a temperature gradient across the device. Even for the bad thermoelectric material AlGaAs, our calculation shows that at room temperature, the SHR can easily lower the temperature by 5-7K. Such devices can be fabricated with the present semiconductor technology. Besides its use as a kitchen refrigerator, the SHR can efficiently cool microelectronic devices.

Analysis for maladjustment properties of passive confocal unstable resonator by using Hartmann-Shack wavefront sensor

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Xiang, Anping

2007-12-01

The effect of intracavity aberration perturbation on output mode structure properties of passive confocal unstable resonator is been experimentally researched by adopting Hartmann-Shack method on the basis of numerical simulation. The results show that intracavity tilt aberration affects the outcoupled intensity distribution, but only a small intracavity tilt perturbation will not obviously augment the high-order aberrations of beam phase properties. The tilt aberration, coma aberration and astigmatism will all be brought, and also tilt aberration is the main component when intracavity mirrors have a vertical movement along the direction of optic axis. When adaptive optical elements such as deformable mirrors are adopted for intracavity aberration correction, the correction for tilt aberration should be considered at first.

Compact high-pulse-energy passively Q-switched Nd:YLF laser with an ultra-low-magnification unstable resonator: application for efficient optical parametric oscillator.

PubMed

Cho, C Y; Huang, Y P; Huang, Y J; Chen, Y C; Su, K W; Chen, Y F

2013-01-28

We exploit an ultra-low-magnification unstable resonator to develop a high-pulse-energy side-pumped passively Q-switched Nd:YLF/Cr⁴⁺:YAG laser with improving beam quality. A wedged laser crystal is employed in the cavity to control the emissions at 1047 nm and 1053 nm independently through the cavity alignment. The pulse energies at 1047 nm and 1053 nm are found to be 19 mJ and 23 mJ, respectively. The peak powers for both wavelengths are higher than 2 MW. Furthermore, the developed Nd:YLF lasers are employed to pump a monolithic optical parametric oscillator for confirming the applicability in nonlinear wavelength conversions.

Metasurface Mirrors for External Control of Mie Resonances.

PubMed

van de Groep, Jorik; Brongersma, Mark L

2018-06-13

The ability to control and structurally tune the optical resonances of semiconductor nanostructures has far-reaching implications for a wide range of optical applications, including photodetectors, (bio)sensors, and photovoltaics. Such control is commonly obtained by tailoring the nanostructure's geometry, material, or dielectric environment. Here, we combine insights from the field of coherent optics and metasurface mirrors to effectively turn Mie resonances on and off with high spatial control and in a polarization-dependent fashion. We illustrate this in an integrated device by manipulating the photocurrent spectra of a single-nanowire photodetector placed on a metasurface mirror. This approach can be generalized to control spectral, angle-dependent, absorption, and scattering properties of semiconductor nanostructures with an engineered metasurface and without a need to alter their geometric or materials properties.

Identification of an organic semiconductor superlattice structure of pentacene and perfluoro-pentacene through resonant and non-resonant X-ray scattering

DOE PAGES

Kowarik, S.; Hinderhofer, A.; Wang, C.; ...

2015-11-30

Highly crystalline and stable molecular superlattices are grown with the smallest possible stacking period using monolayers (MLs) of the organic semiconductors pentacene (PEN) and perfluoro-pentacene (PFP). Superlattice reflections in X-ray reflectivity and their energy dependence in resonant soft X-ray reflectivity measurements show that PFP and PEN MLs indeed alternate even though the coherent ordering is lost after ~ 4 ML. The observed lattice spacing of 15.9 Å in the superlattice is larger than in pure PEN and PFP films, presumably because of more upright standing molecules and lack of interdigitation between the incommensurate crystalline PEN and PFP layers. The findingsmore » are important for the development of novel organic quantum optoelectronic devices.« less

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: Influence of spontaneous fluctuations on the emission spectrum of an injection semiconductor laser

NASA Astrophysics Data System (ADS)

Gulyaev, Yurii V.; Suris, Robert A.; Tager, A. A.; Élenkrig, B. B.

1988-11-01

A theoretical investigation is made of fluctuation-induced excitation of side longitudinal modes in the emission spectra of semiconductor lasers, including those with an external mirror. It is shown that nonlinear refraction of light in the active region of a semiconductor laser may result in a noise redistribution of the radiation between longitudinal resonator modes and can be responsible for the multimode nature of the average emission spectrum. An analysis is made of the influence of selectivity of an external mirror on the stability of cw operation, minimum line width, and mode composition of the emission spectra of semiconductor lasers. The conditions for maximum narrowing of the emission spectrum of a semiconductor laser with an external selective mirror are identified.

Wavelength-tunable optical ring resonators

DOEpatents

Watts, Michael R [Albuquerque, NM; Trotter, Douglas C [Albuquerque, NM; Young, Ralph W [Albuquerque, NM; Nielson, Gregory N [Albuquerque, NM

2009-11-10

Optical ring resonator devices are disclosed that can be used for optical filtering, modulation or switching, or for use as photodetectors or sensors. These devices can be formed as microdisk ring resonators, or as open-ring resonators with an optical waveguide having a width that varies adiabatically. Electrical and mechanical connections to the open-ring resonators are made near a maximum width of the optical waveguide to minimize losses and thereby provide a high resonator Q. The ring resonators can be tuned using an integral electrical heater, or an integral semiconductor junction.

Wavelength-tunable optical ring resonators

DOEpatents

Watts, Michael R [Albuquerque, NM; Trotter, Douglas C [Albuquerque, NM; Young, Ralph W [Albuquerque, NM; Nielson, Gregory N [Albuquerque, NM

2011-07-19

Optical ring resonator devices are disclosed that can be used for optical filtering, modulation or switching, or for use as photodetectors or sensors. These devices can be formed as microdisk ring resonators, or as open-ring resonators with an optical waveguide having a width that varies adiabatically. Electrical and mechanical connections to the open-ring resonators are made near a maximum width of the optical waveguide to minimize losses and thereby provide a high resonator Q. The ring resonators can be tuned using an integral electrical heater, or an integral semiconductor junction.

DARPA-URI Consortium Meetings on Submicron Heterostructures of Diluted Magnetic Semiconductors.

DTIC Science & Technology

1987-01-01

Acta Physica Polonica (to be published). 89. B.E. Larson, K.C. Hass, H. Ehrenreich and A.E. Carlsson, "Theory of Exchange Interactions and Chemical...Rodriguez, "Parity Violation and Electron-Spin Resonance of Donors in Semiconductors" (to appear in Physica ). 45. Z. Barticevic, M. Dobrowolska, J.K. Furdyna

Simulations of Resonant Intraband and Interband Tunneling Spin Filters

NASA Technical Reports Server (NTRS)

Ting, David; Cartoixa-Soler, Xavier; McGill, T. C.; Smith, Darryl L.; Schulman, Joel N.

2001-01-01

This viewgraph presentation reviews resonant intraband and interband tunneling spin filters It explores the possibility of building a zero-magnetic-field spin polarizer using nonmagnetic III-V semiconductor heterostructures. It reviews the extensive simulations of quantum transport in asymmetric InAs/GaSb/AlSb resonant tunneling structures with Rashba spin splitting and proposes a. new device concept: side-gated asymmetric Resonant Interband Tunneling Diode (a-RITD).

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moyer, Richard A.; Paz-Soldan, Carlos; Nazikian, Raffi

Here, experiments have been executed in the DIII-D tokamak to extend suppression of Edge Localized Modes (ELMs) with Resonant Magnetic Perturbations (RMPs) to ITER-relevant levels of beam torque. The results support the hypothesis for RMP ELM suppression based on transition from an ideal screened response to a tearing response at a resonant surface that prevents expansion of the pedestal to an unstable width.

Experimental and analytical investigations of longitudinal combustion instability in a continuously variable resonance combustor (CVRC)

NASA Astrophysics Data System (ADS)

Yu, Yen Ching

An analytical model based on linearized Euler equations (LEE) is developed and used in conjunction with a validating experiment to study combustion instability. The LEE model features mean flow effects, entropy waves, adaptability for more physically-realistic boundary conditions, and is generalized for multiple-domain conditions. The model calculates spatial modes, resonant frequencies and linear growth rates of the overall system. The predicted resonant frequencies and spatially-resolved mode shapes agree with the experimental data from a longitudinally-unstable model rocket combustor to within 7%. Different gaseous fuels (methane, ethylene, and hydrogen) were tested under fixed geometry. Tests with hydrogen were stable, whereas ethylene, methane, and JP-8 were increasingly unstable. A novel method for obtaining large amounts of stability data under variable resonance conditions in a single test was demonstrated. The continuously variable resonance combustor (CVRC) incorporates a traversing choked axial oxidizer inlet to vary the overall combustion system resonance. The CVRC experiment successfully demonstrates different level of instability, transitions between stability levels, and identifies the most stable and unstable geometric combination. Pressure oscillation amplitudes ranged from less than 10% of mean pressure to greater than 60%. At low amplitudes, measured resonant frequency changed with inlet location but at high amplitude the measured resonance frequency matched the frequency of the combustion chamber. As the system transitions from linear to non-linear instability, the higher harmonics of the fundamental resonant mode appear nearly simultaneously. Transient, high-amplitude, broadband noise, at lower frequencies (on the order of 200 Hz) are also observed. Conversely, as the system transitions back to a more linear stability regime, the higher harmonics disappear sequentially, led by the highest order. Good agreements between analytical and experimental results are attained by treating the experiment as quasi-stationary. The stability characteristics from the high frequency measurements are further analyzed using filtered pressure traces, spectrograms, power spectral density plots, and oscillation decrements. Future works recommended include: direct measurements, such as chemiluminescence or high-speed imaging to examine the unsteady combustion processes; three-way comparisons between the acoustic-based, linear Euler-based, and non-linear Euler/RANS model; use the high fidelity computation to investigate the forcing terms modeled in the acoustic-based model.

Piezoelectric shear wave resonator and method of making same

DOEpatents

Wang, Jin S.; Lakin, Kenneth M.; Landin, Allen R.

1988-01-01

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.

Method of making a piezoelectric shear wave resonator

DOEpatents

Wang, Jin S.; Lakin, Kenneth M.; Landin, Allen R.

1987-02-03

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppm/.degree.C.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Strauss, Y.; Horwitz, L. P.; Eisenberg, E.

We discuss the quantum Lax-Phillips theory of scattering and unstable systems. In this framework, the decay of an unstable system is described by a semigroup. The spectrum of the generator of the semigroup corresponds to the singularities of the Lax-Phillips S-matrix. In the case of discrete (complex) spectrum of the generator of the semigroup, associated with resonances, the decay law is exactly exponential. The states corresponding to these resonances (eigenfunctions of the generator of the semigroup) lie in the Lax-Phillips Hilbert space, and therefore all physical properties of the resonant states can be computed. We show that the Lax-Phillips S-matrixmore » is unitarily related to the S-matrix of standard scattering theory by a unitary transformation parametrized by the spectral variable σ of the Lax-Phillips theory. Analytic continuation in σ has some of the properties of a method developed some time ago for application to dilation analytic potentials. We work out an illustrative example using a Lee-Friedrichs model for the underlying dynamical system.« less

The role of density discontinuity in the inviscid instability of two-phase parallel flows

NASA Astrophysics Data System (ADS)

Behzad, M.; Ashgriz, N.

2014-02-01

We re-examine the inviscid instability of two-phase parallel flows with piecewise linear velocity profiles. Although such configuration has been theoretically investigated, we employ the concept of waves resonance to physically interpret the instability mechanism as well as the essential role of density discontinuity in the flow. Upon performing linear stability analysis, we demonstrate the existence of neutrally stable "density" and "density-vorticity" waves which are emerged due to the density jump in the flow, in addition to the well-known vorticity waves. Such waves are capable of resonating with each other to form unstable modes in the flow. Although unstable modes in this study are classified as the "shear instability" type, we demonstrate that they are not necessarily of the Rayleigh type. The results also show that the density can have both stabilizing and destabilizing effects on the flow stability. We verify that the difference in the resonating pair of neutral waves leads to such distinct behavior of the density variation.

Investigating electrical resonance in eddy-current array probes

NASA Astrophysics Data System (ADS)

Hughes, R.; Fan, Y.; Dixon, S.

2016-02-01

The sensitivity enhancing effects of eddy-current testing at frequencies close to electrical resonance are explored. Var-ied techniques exploiting the phenomenon, dubbed near electrical resonance signal enhancement (NERSE), were experimentally investigated to evaluate its potential exploitation for other interesting applications in aerospace materials, in particular its potential for boosting the sensitivity of standard ECT measurements. Methods for setting and controlling the typically unstable resonant frequencies of such systems are discussed. This research is funded by the EPSRC, via the Research Centre for Non-Destructive Evaluation RCNDE, and Rolls-Royce plc.

Active control of helicopter air resonance in hover and forward flight

NASA Technical Reports Server (NTRS)

Takahashi, M. D.; Friedman, P. P.

1988-01-01

A coupled rotor/fuselage helicopter analysis is presented. The accuracy of the model is illustrated by comparing it with experimental data. The sensitivity of the open loop damping of the unstable resonance mode to such modeling effects as blade torsional flexibility, unsteady aerodynamics, forward flight, periodic terms, and trim solution is illustrated by numerous examples. Subsequently, the model is used in conjunction with linear optimal control theory to stabilize the air resonance mode. The influence of the modeling effects mentioned before on active resonance control is then investigated.

Characterization of micro-resonator based on enhanced metal insulator semiconductor capacitor for glucose recognition.

PubMed

Dhakal, Rajendra; Kim, E S; Jo, Yong-Hwa; Kim, Sung-Soo; Kim, Nam-Young

2017-03-01

We present a concept for the characterization of micro-fabricated based resonator incorporating air-bridge metal-insulator-semiconductor (MIS) capacitor to continuously monitor an individual's state of glucose levels based on frequency variation. The investigation revealed that, the micro-resonator based on MIS capacitor holds considerable promise for implementation and recognition as a glucose sensor for human serum. The discrepancy in complex permittivity as a result of enhanced capacitor was achieved for the detection and determination of random glucose concentration levels using a unique variation of capacitor that indeed results in an adequate variation of the resonance frequency. Moreover, the design and development of micro-resonator with enhanced MIS capacitor generate a resolution of 112.38 × 10 -3 pF/mg/dl, minimum detectable glucose level of 7.45mg/dl, and a limit of quantification of 22.58mg/dl. Additionally, this unique approach offers long-term reliability for mediator-free glucose sensing with a relative standard deviation of less than 0.5%. Copyright © 2017 IPEM. Published by Elsevier Ltd. All rights reserved.

Resonant polarization transfer from electron spins to nuclear spins-or to muon spins-in semiconductors

NASA Astrophysics Data System (ADS)

Henstra, A.; Wenckebach, W. Th.

1991-02-01

A review is given of newly developed pulsed Electron Spin Resonance (ESR) methods for dynamic polarization of nuclear spins. The application of two of these methods, Nuclear Orientation Via Electron spin Locking (NOVEL) and the Integrated Solid Effect (ISE), for the polarization of nuclear spins in semiconductors is discussed in more detail. It is proposed to use these methods to study the ESR spectrum of unpaired electrons in the vicinity of muons that are bound in a solid. Thus, ESR would be observed with a sensitivity which is enhanced by about ten orders of magnitude compared to conventional ESR.

Ultrafast All-Optical Switching of Germanium-Based Flexible Metaphotonic Devices.

PubMed

Lim, Wen Xiang; Manjappa, Manukumara; Srivastava, Yogesh Kumar; Cong, Longqing; Kumar, Abhishek; MacDonald, Kevin F; Singh, Ranjan

2018-03-01

Incorporating semiconductors as active media into metamaterials offers opportunities for a wide range of dynamically switchable/tunable, technologically relevant optical functionalities enabled by strong, resonant light-matter interactions within the semiconductor. Here, a germanium-thin-film-based flexible metaphotonic device for ultrafast optical switching of terahertz radiation is experimentally demonstrated. A resonant transmission modulation depth of 90% is achieved, with an ultrafast full recovery time of 17 ps. An observed sub-picosecond decay constant of 670 fs is attributed to the presence of trap-assisted recombination sites in the thermally evaporated germanium film. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coherent response of a semiconductor microcavity in the strong coupling regime

NASA Astrophysics Data System (ADS)

Cassabois, G.; Triques, A. L. C.; Ferreira, R.; Delalande, C.; Roussignol, Ph; Bogani, F.

2000-05-01

We have studied the coherent dynamics of a semiconductor microcavity by means of interferometric correlation measurements with subpicosecond time resolution in a backscattering geometry. Evidence is brought of the resolution of a homogeneous polariton line in an inhomogeneously broadened exciton system. Surprisingly, photon-like polaritons exhibit an inhomogeneous dephasing. Moreover, we observe an unexpected stationary coherence up to 8 ps for the lower polariton branch close to resonance. All these experimental results are well reproduced within the framework of a linear dispersion theory assuming a coherent superposition of the reflectivity and resonant Rayleigh scattering signals with a well-defined relative phase.

Electronic structure of the organic semiconductor Alq3 (aluminum tris-8-hydroxyquinoline) from soft x-ray spectroscopies and density functional theory calculations.

PubMed

DeMasi, A; Piper, L F J; Zhang, Y; Reid, I; Wang, S; Smith, K E; Downes, J E; Peltekis, N; McGuinness, C; Matsuura, A

2008-12-14

The element-specific electronic structure of the organic semiconductor aluminum tris-8-hydroxyquinoline (Alq(3)) has been studied using a combination of resonant x-ray emission spectroscopy, x-ray photoelectron spectroscopy, x-ray absorption spectroscopy, and density functional theory (DFT) calculations. Resonant and nonresonant x-ray emission spectroscopy were used to measure directly the carbon, nitrogen and oxygen 2p partial densities of states in Alq(3), and good agreement was found with the results of DFT calculations. Furthermore, resonant x-ray emission at the carbon K-edge is shown to be able to measure the partial density of states associated with individual C sites. Finally, comparison of previous x-ray emission studies and the present data reveal the presence of clear photon-induced damage in the former.

Enhanced transmission in rolled-up hyperlenses utilizing Fabry-Pérot resonances

NASA Astrophysics Data System (ADS)

Kerbst, Jochen; Schwaiger, Stephan; Rottler, Andreas; Koitmäe, Aune; Bröll, Markus; Ehlermann, Jens; Stemmann, Andrea; Heyn, Christian; Heitmann, Detlef; Mendach, Stefan

2011-11-01

We experimentally demonstrate that the transmission through rolled-up metal/semiconductor hyperlenses can be enhanced at desired frequencies utilizing Fabry-Pérot resonances. By means of finite difference time domain simulations, we prove that hyperlensing occurs at frequencies of high transmission.

Nonlinear Dynamics of a Helicopter Model in Ground Resonance

NASA Technical Reports Server (NTRS)

Tang, D. M.; Dowell, E. H.

1985-01-01

An approximate theoretical method is presented which determined the limit cycle behavior of a helicopter model which has one or two nonlinear dampers. The relationship during unstable ground resonance oscillations between lagging motion of the blades and fuselage motion is discussed. An experiment was carried out on using a helicopter scale model. The experimental results agree with those of the theoretical analysis.

The strange case of the missing apocentric librators in the 3:2 resonance. [in asteroidal belt

NASA Technical Reports Server (NTRS)

Ip, W.-H.

1976-01-01

From a comparison of the 2:1 and 3:2 resonances (in the asteroidal belt) two possible explanations to the absence of 3:2 apocentric librators are suggested. The first one is that such 3:2 resonant motion is dynamically unstable. The second interpretation requires the absence of near-circular orbits originally at 4 AU. The latter view, if correct, is inconsistent with cosmogonic models which predict the original orbits of the asteroids to be nearly circular.

Competing Turing and Faraday Instabilities in Longitudinally Modulated Passive Resonators.

PubMed

Copie, François; Conforti, Matteo; Kudlinski, Alexandre; Mussot, Arnaud; Trillo, Stefano

2016-04-08

We experimentally investigate the interplay of Turing (modulational) and Faraday (parametric) instabilities in a bistable passive nonlinear resonator. The Faraday branch is induced via parametric resonance owing to a periodic modulation of the resonator dispersion. We show that the bistable switching dynamics is dramatically affected by the competition between the two instability mechanisms, which dictates two completely novel scenarios. At low detunings from resonance, switching occurs between the stable stationary lower branch and the Faraday-unstable upper branch, whereas at high detunings we observe the crossover between the Turing and Faraday periodic structures. The results are well explained in terms of the universal Lugiato-Lefever model.

Piezoelectric shear wave resonator and method of making same

DOEpatents

Wang, J.S.; Lakin, K.M.; Landin, A.R.

1985-05-20

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppM//sup 0/C.

Piezoelectric shear wave resonator and method of making same

DOEpatents

Wang, J.S.; Lakin, K.M.; Landin, A.R.

1983-10-25

An acoustic shear wave resonator comprising a piezoelectric film having its C-axis substantially inclined from the film normal such that the shear wave coupling coefficient significantly exceeds the longitudinal wave coupling coefficient, whereby the film is capable of shear wave resonance, and means for exciting said film to resonate. The film is prepared by deposition in a dc planar magnetron sputtering system to which a supplemental electric field is applied. The resonator structure may also include a semiconductor material having a positive temperature coefficient of resonance such that the resonator has a temperature coefficient of resonance approaching 0 ppM//sup 0/C.

Method of fabricating n-type and p-type microcrystalline semiconductor alloy material including band gap widening elements

DOEpatents

Guha, Subhendu; Ovshinsky, Stanford R.

1990-02-02

A method of fabricating doped microcrystalline semiconductor alloy material which includes a band gap widening element through a glow discharge deposition process by subjecting a precursor mixture which includes a diluent gas to an a.c. glow discharge in the absence of a magnetic field of sufficient strength to induce electron cyclotron resonance.

Theoretical treatment of the processes involving the dipole transitions to the lowest exciton states in hexagonal semiconductors

NASA Astrophysics Data System (ADS)

Semenova, L. E.

2018-04-01

The treatment of the two-photon transitions to the An=1 exciton level and the resonant Raman scattering of light by LO-phonons is given for the hexagonal semiconductors A2B6, taking into account the influence of the complex top valence band and anisotropy of the exciton effective mass.

Optical feedback structures and methods of making

DOEpatents

None

2014-11-18

An optical resonator can include an optical feedback structure disposed on a substrate, and a composite including a matrix including a chromophore. The composite disposed on the substrate and in optical communication with the optical feedback structure. The chromophore can be a semiconductor nanocrystal. The resonator can provide laser emission when excited.

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, Kent D.; Lear, Kevin L.; Schneider, Jr., Richard P.

1996-01-01

A semiconductor light-emitting device and method. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL).

Efficient semiconductor light-emitting device and method

DOEpatents

Choquette, K.D.; Lear, K.L.; Schneider, R.P. Jr.

1996-02-20

A semiconductor light-emitting device and method are disclosed. The semiconductor light-emitting device is provided with at least one control layer or control region which includes an annular oxidized portion thereof to channel an injection current into the active region, and to provide a lateral refractive index profile for index guiding the light generated within the device. A periodic composition grading of at least one of the mirror stacks in the device provides a reduced operating voltage of the device. The semiconductor light-emitting device has a high efficiency for light generation, and may be formed either as a resonant-cavity light-emitting diode (RCLED) or as a vertical-cavity surface-emitting laser (VCSEL). 12 figs.

Porter-Thomas distribution in unstable many-body systems

DOE Office of Scientific and Technical Information (OSTI.GOV)

Volya, Alexander

We use the continuum shell model approach to explore the resonance width distribution in unstable many-body systems. The single-particle nature of a decay, the few-body character of the interaction Hamiltonian, and the collectivity that emerges in nonstationary systems due to the coupling to the continuum of reaction states are discussed. Correlations between the structures of the parent and daughter nuclear systems in the common Fock space are found to result in deviations of decay width statistics from the Porter-Thomas distribution.

Direct measurement of the effective infrared dielectric response of a highly doped semiconductor metamaterial.

PubMed

Al Mohtar, Abeer; Kazan, Michel; Taliercio, Thierry; Cerutti, Laurent; Blaize, Sylvain; Bruyant, Aurélien

2017-03-24

We have investigated the effective dielectric response of a subwavelength grating made of highly doped semiconductors (HDS) excited in reflection, using numerical simulations and spectroscopic measurement. The studied system can exhibit strong localized surface resonances and has, therefore, a great potential for surface-enhanced infrared absorption (SEIRA) spectroscopy application. It consists of a highly doped InAsSb grating deposited on lattice-matched GaSb. The numerical analysis demonstrated that the resonance frequencies can be inferred from the dielectric function of an equivalent homogeneous slab by accounting for the complex reflectivity of the composite layer. Fourier transform infrared reflectivity (FTIR) measurements, analyzed with the Kramers-Kronig conversion technique, were used to deduce the effective response in reflection of the investigated system. From the knowledge of this phenomenological dielectric function, transversal and longitudinal energy-loss functions were extracted and attributed to transverse and longitudinal resonance modes frequencies.

Purcell effect for active tuning of light scattering from semiconductor optical antennas.

PubMed

Holsteen, Aaron L; Raza, Søren; Fan, Pengyu; Kik, Pieter G; Brongersma, Mark L

2017-12-15

Subwavelength, high-refractive index semiconductor nanostructures support optical resonances that endow them with valuable antenna functions. Control over the intrinsic properties, including their complex refractive index, size, and geometry, has been used to manipulate fundamental light absorption, scattering, and emission processes in nanostructured optoelectronic devices. In this study, we harness the electric and magnetic resonances of such antennas to achieve a very strong dependence of the optical properties on the external environment. Specifically, we illustrate how the resonant scattering wavelength of single silicon nanowires is tunable across the entire visible spectrum by simply moving the height of the nanowires above a metallic mirror. We apply this concept by using a nanoelectromechanical platform to demonstrate active tuning. Copyright © 2017 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Electronic Structure of the Organic Semiconductor Alq3 (aluminum tris-8-hydroxyquinoline) from Soft X-ray Spectroscopies and Density Functional Theory Calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

DeMasi, A.; Piper, L; Zhang, Y

2008-01-01

The element-specific electronic structure of the organic semiconductor aluminum tris-8-hydroxyquinoline (Alq3) has been studied using a combination of resonant x-ray emission spectroscopy, x-ray photoelectron spectroscopy, x-ray absorption spectroscopy, and density functional theory (DFT) calculations. Resonant and nonresonant x-ray emission spectroscopy were used to measure directly the carbon, nitrogen and oxygen 2p partial densities of states in Alq3, and good agreement was found with the results of DFT calculations. Furthermore, resonant x-ray emission at the carbon K-edge is shown to be able to measure the partial density of states associated with individual C sites. Finally, comparison of previous x-ray emission studiesmore » and the present data reveal the presence of clear photon-induced damage in the former.« less

Room temperature strong light-matter coupling in three dimensional terahertz meta-atoms

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paulillo, B., E-mail: bruno.paulillo@u-psud.fr; Manceau, J.-M., E-mail: jean-michel.manceau@u-psud.fr; Colombelli, R., E-mail: raffaele.colombelli@u-psud.fr

2016-03-07

We demonstrate strong light-matter coupling in three dimensional terahertz meta-atoms at room temperature. The intersubband transition of semiconductor quantum wells with a parabolic energy potential is strongly coupled to the confined circuital mode of three-dimensional split-ring metal-semiconductor-metal resonators that have an extreme sub-wavelength volume (λ/10). The frequency of these lumped-element resonators is controlled by the size and shape of the external antenna, while the interaction volume remains constant. This allows the resonance frequency to be swept across the intersubband transition and the anti-crossing characteristic of the strong light-matter coupling regime to be observed. The Rabi splitting, which is twice themore » Rabi frequency (2Ω{sub Rabi}), amounts to 20% of the bare transition at room temperature, and it increases to 28% at low-temperature.« less

Gate-controlled electromechanical backaction induced by a quantum dot

NASA Astrophysics Data System (ADS)

Okazaki, Yuma; Mahboob, Imran; Onomitsu, Koji; Sasaki, Satoshi; Yamaguchi, Hiroshi

2016-04-01

Semiconductor-based quantum structures integrated into mechanical resonators have emerged as a unique platform for generating entanglement between macroscopic phononic and mesocopic electronic degrees of freedom. A key challenge to realizing this is the ability to create and control the coupling between two vastly dissimilar systems. Here, such coupling is demonstrated in a hybrid device composed of a gate-defined quantum dot integrated into a piezoelectricity-based mechanical resonator enabling milli-Kelvin phonon states to be detected via charge fluctuations in the quantum dot. Conversely, the single electron transport in the quantum dot can induce a backaction onto the mechanics where appropriate bias of the quantum dot can enable damping and even current-driven amplification of the mechanical motion. Such electron transport induced control of the mechanical resonator dynamics paves the way towards a new class of hybrid semiconductor devices including a current injected phonon laser and an on-demand single phonon emitter.

A model for active control of helicopter air resonance in hover and forward flight

NASA Technical Reports Server (NTRS)

Takahashi, M. D.; Friedmann, P. P.

1988-01-01

A coupled rotor/fuselage helicopter analysis is presented. The accuracy of the model is verified by comparing it with the experimental data. The sensitivity of the open loop damping of the unstable air resonance mode to such modeling effects as blade torsional flexibility, unsteady aerodynamics, forward flight, periodic terms, and trim solution is illustrated by numerous examples. Subsequently, the model is used in conjunction with linear optimal control theory to stabilize the air resonance mode. The influence of the modeling effects mentioned before on active air resonance control is then investigated.

Semiconductor quantum well irradiated by a two-mode electromagnetic field as a terahertz emitter

NASA Astrophysics Data System (ADS)

Mandal, S.; Liew, T. C. H.; Kibis, O. V.

2018-04-01

We study theoretically the nonlinear optical properties of a semiconductor quantum well (QW) irradiated by a two-mode electromagnetic wave consisting of a strong resonant dressing field and a weak off-resonant driving field. In the considered strongly coupled electron-field system, the dressing field opens dynamic Stark gaps in the electron energy spectrum of the QW, whereas the driving field induces electron oscillations in the QW plane. Since the gapped electron spectrum restricts the amplitude of the oscillations, the emission of a frequency comb from the QW appears. Therefore, the doubly driven QW operates as a nonlinear optical element which can be used, particularly, for optically controlled generation of terahertz radiation.

Enhanced Resonant Tunneling in Symmetric 2D Semiconductor Vertical Heterostructure Transistors.

PubMed

Campbell, Philip M; Tarasov, Alexey; Joiner, Corey A; Ready, William J; Vogel, Eric M

2015-05-26

Tunneling transistors with negative differential resistance have widespread appeal for both digital and analog electronics. However, most attempts to demonstrate resonant tunneling devices, including graphene-insulator-graphene structures, have resulted in low peak-to-valley ratios, limiting their application. We theoretically demonstrate that vertical heterostructures consisting of two identical monolayer 2D transition-metal dichalcogenide semiconductor electrodes and a hexagonal boron nitride barrier result in a peak-to-valley ratio several orders of magnitude higher than the best that can be achieved using graphene electrodes. The peak-to-valley ratio is large even at coherence lengths on the order of a few nanometers, making these devices appealing for nanoscale electronics.

Improvement of charge-pumping electrically detected magnetic resonance and its application to silicon metal-oxide-semiconductor field-effect transistor

NASA Astrophysics Data System (ADS)

Hori, Masahiro; Tsuchiya, Toshiaki; Ono, Yukinori

2017-01-01

Charge-pumping electrically detected magnetic resonance (CP EDMR), or EDMR in the CP mode, is improved and applied to a silicon metal-oxide-semiconductor field-effect transistor (MOSFET). Real-time monitoring of the CP process reveals that high-frequency transient currents are an obstacle to signal amplification for EDMR. Therefore, we introduce cutoff circuitry, leading to a detection limit for the number of spins as low as 103 for Si MOS interface defects. With this improved method, we demonstrate that CP EDMR inherits one of the most important features of the CP method: the gate control of the energy window of the detectable interface defects for spectroscopy.

Dynamics of runaway tails with time-dependent sub-Dreicer dc fields in magnetized plasmas

NASA Technical Reports Server (NTRS)

Moghaddam-Taaheri, E.; Vlahos, L.

1987-01-01

The evolution of runaway tails driven by sub-Dreicer time-dependent dc fields in a magnetized plasma are studied numerically using a quasi-linear code based on the Ritz-Galerkin method and finite elements. It is found that the runaway tail maintained a negative slope during the dc field increase. Depending on the values of the dc electric field at t = 0 and the electron gyrofrequency to the plasma frequency ratio the runaway tail became unstable to the anomalous Doppler resonance or remained stable before the saturation of the dc field at some maximum value. The systems that remained stable during this stage became unstable to the anomalous Doppler or the Cerenkov resonances when the dc field was kept at the saturation level or decreased. Once the instability is triggered, the runaway tail is isotropized.

Scanning Tunneling Optical Resonance Microscopy Developed

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Raffaelle, Ryne P.; Lau, Janis E.; Jenkins, Phillip P.; Castro, Stephanie L.; Tin, Padetha; Wilt, David M.; Pal, Anna Maria; Fahey, Stephen D.

2004-01-01

The ability to determine the in situ optoelectronic properties of semiconductor materials has become especially important as the size of device architectures has decreased and the development of complex microsystems has increased. Scanning Tunneling Optical Resonance Microscopy, or STORM, can interrogate the optical bandgap as a function of its position within a semiconductor micro-structure. This technique uses a tunable solidstate titanium-sapphire laser whose output is "chopped" using a spatial light modulator and is coupled by a fiber-optic connector to a scanning tunneling microscope in order to illuminate the tip-sample junction. The photoenhanced portion of the tunneling current is spectroscopically measured using a lock-in technique. The capabilities of this technique were verified using semiconductor microstructure calibration standards that were grown by organometallic vapor-phase epitaxy. Bandgaps characterized by STORM measurements were found to be in good agreement with the bulk values determined by transmission spectroscopy and photoluminescence and with the theoretical values that were based on x-ray diffraction results.

Dissipation in graphene and nanotube resonators

NASA Astrophysics Data System (ADS)

Seoánez, C.; Guinea, F.; Castro Neto, A. H.

2007-09-01

Different damping mechanisms in graphene nanoresonators are studied: charges in the substrate, ohmic losses in the substrate and the graphene sheet, breaking and healing of surface bonds (Velcro effect), two level systems, attachment losses, and thermoelastic losses. We find that, for realistic structures and contrary to semiconductor resonators, dissipation is dominated by ohmic losses in the graphene layer and metallic gate. An extension of this study to carbon nanotube-based resonators is presented.

Excitonic luminescence upconversion in a two-dimensional semiconductor

DOE PAGES

Jones, Aaron M.; Yu, Hongyi; Schaibley, John R.; ...

2015-12-21

Photon upconversion is an elementary light-matter interaction process in which an absorbed photon is re-emitted at higher frequency after extracting energy from the medium. Furthermore, this phenomenon lies at the heart of optical refrigeration in solids(1), where upconversion relies on anti-Stokes processes enabled either by rare-earth impurities(2) or exciton-phonon coupling(3). We demonstrate a luminescence upconversion process from a negatively charged exciton to a neutral exciton resonance in monolayer WSe2, producing spontaneous anti-Stokes emission with an energy gain of 30 meV. Polarization-resolved measurements find this process to be valley selective, unique to monolayer semiconductors(4). Since the charged exciton binding energy(5) closelymore » matches the 31 meV A(1)' optical phonon(6-9), we ascribe the spontaneous excitonic anti-Stokes to doubly resonant Raman scattering, where the incident and outgoing photons are in resonance with the charged and neutral excitons, respectively. Additionally, we resolve a charged exciton doublet with a 7 meV splitting, probably induced by exchange interactions, and show that anti-Stokes scattering is efficient only when exciting the doublet peak resonant with the phonon, further confirming the excitonic doubly resonant picture.« less

Determination of the Unstable States of the Solid State Plasma in Semiconductor Devices

DTIC Science & Technology

1988-05-01

of the carrier moving through the lattice potentials, which alter the carrier’s response to an external electromag- netic field. so If the average...see quantum mechanical affects from the lattice potentials and a spread in carrier momentums due to the Heisenburg Uncertainty Principle. We can...us to account for the quantum mechanical source of the plasma. That source is the lattice . At values of the quantum compression parameter near unity

Terahertz plasmon-induced transparency based on asymmetric dual-disk resonators coupled to a semiconductor InSb waveguide and its biosensor application

NASA Astrophysics Data System (ADS)

Shahamat, Yadollah; Vahedi, Mohammad

2017-06-01

An ultracompact double eight-shaped plasmonic structure for the realization of plasmon-induced transparency (PIT) in the terahertz (THz) region has been studied. The device consists of a semiconductor-insulator-semiconductor bus waveguide coupled to the dual-disk resonators. Indium antimonide is employed to excite SPP in the THz region. The transmission characteristics of the proposed device are simulated numerically by the finite-difference time-domain method. In addition, a theoretical analysis based on the coupled-mode theory for transmission features is presented and compared with the numerical results. Results are in good agreement. Also, the dependence of PIT frequency characteristics on the radius of the outer disk is discussed in detail. In addition, by removing one of the outer disk resonators, double-PIT peaks can be observed in the transmission spectrum, and the physical mechanism of the appeared peaks is investigated. Finally, an application of the proposed structure for distinguishing different states of DNA molecules is discussed. Results show that the maximum sensitivity with 654 GHz/RIU-1 could be obtained for a single PIT structure. The frequency shifts equal to 37 and 99 GHz could be observed for the denatured and the hybridized DNA states, respectively.

Evaluation of thermal effects on the beam quality of disk laser with unstable resonator

NASA Astrophysics Data System (ADS)

Shayganmanesh, Mahdi; Beirami, Reza

2017-01-01

In this paper thermal effects of the disk active medium and associated effects on the beam quality of laser are investigated. Using Collins integral and iterative method, transverse mode of an unstable resonator including a Yb:YAG active medium in disk geometry is calculated. After that the beam quality of the laser is calculated based on the generalized beam characterization method. Thermal lensing of the disk is calculated based on the OPD (Optical Path Difference) concept. Five factors influencing the OPD including temperature gradient, disk thermal expansion, photo-elastic effect, electronic lens and disk deformation are considered in our calculations. The calculations show that the effect of disk deformation factor on the quality of laser beam in the resonator is strong. However the total effect of all the thermal factors on the internal beam quality is fewer. Also it is shown that thermal effects degrade the output power, beam profile and beam quality of the output laser beam severely. As well the magnitude of each of affecting factors is evaluated distinctly.

Quantum effects on compressional Alfven waves in compensated semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amin, M. R.

2015-03-15

Amplitude modulation of a compressional Alfven wave in compensated electron-hole semiconductor plasmas is considered in the quantum magnetohydrodynamic regime in this paper. The important ingredients of this study are the inclusion of the particle degeneracy pressure, exchange-correlation potential, and the quantum diffraction effects via the Bohm potential in the momentum balance equations of the charge carriers. A modified nonlinear Schrödinger equation is derived for the evolution of the slowly varying amplitude of the compressional Alfven wave by employing the standard reductive perturbation technique. Typical values of the parameters for GaAs, GaSb, and GaN semiconductors are considered in analyzing the linearmore » and nonlinear dispersions of the compressional Alfven wave. Detailed analysis of the modulation instability in the long-wavelength regime is presented. For typical parameter ranges of the semiconductor plasmas and at the long-wavelength regime, it is found that the wave is modulationally unstable above a certain critical wavenumber. Effects of the exchange-correlation potential and the Bohm potential in the wave dynamics are also studied. It is found that the effect of the Bohm potential may be neglected in comparison with the effect of the exchange-correlation potential in the linear and nonlinear dispersions of the compressional Alfven wave.« less

Unstable footwear as a speed-dependent noise-based training gear to exercise inverted pendulum motion during walking.

PubMed

Dierick, Frédéric; Bouché, Anne-France; Scohier, Mikaël; Guille, Clément; Buisseret, Fabien

2018-05-15

Previous research on unstable footwear has suggested that it may induce mechanical noise during walking. The purpose of this study was to explore whether unstable footwear could be considered as a noise-based training gear to exercise body center of mass (CoM) motion during walking. Ground reaction forces were collected among 24 healthy young women walking at speeds between 3 and 6 km h -1 with control running shoes and unstable rocker-bottom shoes. The external mechanical work, the recovery of mechanical energy of the CoM during and within the step cycles, and the phase shift between potential and kinetic energy curves of the CoM were computed. Our findings support the idea that unstable rocker-bottom footwear could serve as a speed-dependent noise-based training gear to exercise CoM motion during walking. At slow speed, it acts as a stochastic resonance or facilitator that reduces external mechanical work; whereas at brisk speed it acts as a constraint that increases external mechanical work and could mimic a downhill slope.

Electric-dipole absorption resonating with longitudinal optical phonon-plasmon system and its effect on dispersion relations of interface phonon polariton modes in metal/semiconductor-stripe structures

NASA Astrophysics Data System (ADS)

Sakamoto, Hironori; Takeuchi, Eito; Yoshida, Kouki; Morita, Ken; Ma, Bei; Ishitani, Yoshihiro

2018-01-01

Interface phonon polaritons (IPhPs) in nano-structures excluding metal components are thoroughly investigated because they have lower loss in optical emission or absorption and higher quality factors than surface plasmon polaritons. In previous reports, it is found that strong infrared (IR) absorption is based on the interaction of p-polarized light and materials, and the resonance photon energy highly depends on the structure size and angle of incidence. We report the optical absorption by metal/semiconductor (bulk-GaAs and thin film-AlN)-stripe structures in THz to mid-IR region for the electric field of light perpendicular to the stripes, where both of s- and p-polarized light are absorbed. The absorption resonates with longitudinal optical (LO) phonon or LO phonon-plasmon coupling (LOPC) modes, and thus is independent of the angle of incidence or structure size. This absorption is attributed to the electric dipoles by the optically induced polarization charges at the metal/semiconductor, heterointerfaces, or interfaces of high electron density layers and depression ones. The electric permittivity is modified by the formation of these dipoles. It is found to be indispensable to utilize our form of altered permittivity to explain the experimental dispersion relations of metal/semiconductor-IPhP and SPhP in these samples. This analysis reveals that the IPhPs in the stripe structures of metal/AlN-film on a SiC substrate are highly confined in the AlN film, while the permittivity of the structures of metal/bulk-GaAs is partially affected by the electric-dipoles. The quality factors of the electric-dipole absorption are found to be 42-54 for undoped samples, and the value of 62 is obtained for Al/AlN-IPhP. It is thought that metal-contained structures are not obstacles to mode energy selectivity in phonon energy region of semiconductors.

Geometrical optics, electrostatics, and nanophotonic resonances in absorbing nanowire arrays.

PubMed

Anttu, Nicklas

2013-03-01

Semiconductor nanowire arrays have shown promise for next-generation photovoltaics and photodetection, but enhanced understanding of the light-nanowire interaction is still needed. Here, we study theoretically the absorption of light in an array of vertical InP nanowires by moving continuously, first from the electrostatic limit to the nanophotonic regime and then to the geometrical optics limit. We show how the absorption per volume of semiconductor material in the array can be varied by a factor of 200, ranging from 10 times weaker to 20 times stronger than in a bulk semiconductor sample.

Tunable surface plasmon devices

DOEpatents

Shaner, Eric A [Rio Rancho, NM; Wasserman, Daniel [Lowell, MA

2011-08-30

A tunable extraordinary optical transmission (EOT) device wherein the tunability derives from controlled variation of the dielectric constant of a semiconducting material (semiconductor) in evanescent-field contact with a metallic array of sub-wavelength apertures. The surface plasmon resonance wavelength can be changed by changing the dielectric constant of the dielectric material. In embodiments of this invention, the dielectric material is a semiconducting material. The dielectric constant of the semiconducting material in the metal/semiconductor interfacial region is controllably adjusted by adjusting one or more of the semiconductor plasma frequency, the concentration and effective mass of free carriers, and the background high-frequency dielectric constant in the interfacial region. Thermal heating and/or voltage-gated carrier-concentration changes may be used to variably adjust the value of the semiconductor dielectric constant.

Resonant Scattering of Surface Plasmon Polaritons by Dressed Quantum Dots

DTIC Science & Technology

2014-06-23

Resonant scattering of surface plasmon polaritons by dressed quantum dots Danhong Huang,1 Michelle Easter,2 Godfrey Gumbs,3 A. A. Maradudin,4 Shawn... polariton waves (SPP) by embedded semiconductor quantum dots above the dielectric/metal interface is explored in the strong-coupling regime. In con- trast to...induced polarization field, treated as a source term9 arising from photo-excited electrons, allows for a resonant scattering of surface plasmon- polariton

III-V Semiconductor Optical Micro-Ring Resonators

NASA Astrophysics Data System (ADS)

Grover, Rohit; Absil, Philippe P.; Ibrahim, Tarek A.; Ho, Ping-Tong

2004-05-01

We describe the theory of optical ring resonators, and our work on GaAs-AlGaAs and GaInAsP-InP optical micro-ring resonators. These devices are promising building blocks for future all-optical signal processing and photonic logic circuits. Their versatility allows the fabrication of ultra-compact multiplexers/demultiplexers, optical channel dropping filters, lasers, amplifiers, and logic gates (to name a few), which will enable large-scale monolithic integration for optics.

Resonance and Capture of Jupiter Comets

NASA Astrophysics Data System (ADS)

Koon, W. S.; Lo, M. W.; Marsden, J. E.; Ross, S. D.

A number of Jupiter family comets such as Oterma and Gehrels 3 make a rapid transition from heliocentric orbits outside the orbit of Jupiter to heliocentric orbits inside the orbit of Jupiter and vice versa. During this transition, the comet can be captured temporarily by Jupiter for one to several orbits around Jupiter. The interior heliocentric orbit is typically close to the 3:2 resonance while the exterior heliocentric orbit is near the 2:3 resonance. An important feature of the dynamics of these comets is that during the transition, the orbit passes close to the libration points L_1 and L_2, two of the equilibrium points for the restricted three-body problem for the Sun-Jupiter system. Studying the libration point invariant manifold structures for L_1 and L_2 is a starting point for understanding the capture and resonance transition of these comets. For example, the recently discovered heteroclinic connection between pairs of unstable periodic orbits (one around the L_1 and the other around L_2) implies a complicated dynamics for comets in a certain energy range. Furthermore, the stable and unstable invariant manifold `tubes' associated to libration point periodic orbits, of which the heteroclinic connections are a part, are phase space conduits transporting material to and from Jupiter and between the interior and exterior of Jupiter's orbit.

Resonant snubber inverter

DOEpatents

Lai, Jih-Sheng; Young, Sr., Robert W.; Chen, Daoshen; Scudiere, Matthew B.; Ott, Jr., George W.; White, Clifford P.; McKeever, John W.

1997-01-01

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Resonant snubber inverter

DOEpatents

Lai, J.S.; Young, R.W. Sr.; Chen, D.; Scudiere, M.B.; Ott, G.W. Jr.; White, C.P.; McKeever, J.W.

1997-06-24

A resonant, snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the main inverter switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 14 figs.

Interference effect in the resonant emission of a semiconductor microcavity

NASA Astrophysics Data System (ADS)

Cassabois, G.; Bogani, F.; Triques, A. L.; Delalande, C.; Roussignol, Ph.

2001-07-01

We present a phenomenological description of the coherent emission from a semiconductor microcavity in the strong-coupling regime. We consider two main contributions which are calculated in the framework of the semiclassical approach of the linear dispersion theory: reflectivity corresponds to the response of a uniform microcavity while resonant Rayleigh scattering (RRS) arises from disorder. Our simulations are compared to experimental results obtained at normal incidence in a backscattering geometry by means of cw spectroscopy and interferometric correlation with subpicosecond resolution. In this geometry, a fair agreement is reached assuming interferences between the two aforementioned contributions. This interference effect gives evidence of the drastic modification of the RRS emission pattern of the embedded quantum well induced by the Fabry-Pérot cavity.

Mode-medium instability and its correction with a Gaussian-reflectivity mirror

NASA Technical Reports Server (NTRS)

Webster, K. L.; Sung, C. C.

1992-01-01

A high-power CO2 laser beam is known to deteriorate after a few microseconds due to a mode-medium instability (MMI) which results from an intensity-dependent heating rate related to the vibrational-to-translational decay of the upper and lower CO2 lasing levels. An iterative numerical technique is developed to model the time evolution of the beam as it is affected by the MMI. The technique is used to study the MMI in an unstable CO2 resonator with a hard-edge output mirror for different parameters like the Fresnel number and the gas density. The results show that the mode of the hard edge unstable resonator deteriorates because of the diffraction ripples in the mode. A Gaussian-reflectivity mirror was used to correct the MMI. This mirror produces a smoother intensity profile which significantly reduces the effects of the MMI. Quantitative results on peak density variation and beam quality are presented.

Mode-medium instability and its correction with a Gaussian reflectivity mirror

NASA Technical Reports Server (NTRS)

Webster, K. L.; Sung, C. C.

1990-01-01

A high power CO2 laser beam is known to deteriorate after a few microseconds due to a mode-medium instability (MMI) which results from an intensity dependent heating rate related to the vibrational-to-translational decay of the upper and lower CO2 lasing levels. An iterative numerical technique is developed to model the time evolution of the beam as it is affected by the MMI. The technique is used to study the MMI in an unstable CO2 resonator with a hard-edge output mirror for different parameters like the Fresnel number and the gas density. The results show that the mode of the hard edge unstable resonator deteriorates because of the diffraction ripples in the mode. A Gaussian-reflectivity mirror was used to correct the MMI. This mirror produces a smoother intensity profile which significantly reduces the effects of the MMI. Quantitative results on peak density variation and beam quality are presented.

Cavity soliton laser based on mutually coupled semiconductor microresonators.

PubMed

Genevet, P; Barland, S; Giudici, M; Tredicce, J R

2008-09-19

We report on experimental observation of localized structures in two mutually coupled broad-area semiconductor resonators, one of which acts as a saturable absorber. These structures coexist with a dark homogeneous background and they have the same properties as cavity solitons without requiring the presence of a driving beam into the system. They can be switched individually on and off by means of a local addressing beam.

Electronic structure of the organic semiconductor copper phthalocyanine: experiment and theory.

PubMed

Aristov, V Yu; Molodtsova, O V; Maslyuk, V V; Vyalikh, D V; Zhilin, V M; Ossipyan, Yu A; Bredow, T; Mertig, I; Knupfer, M

2008-01-21

The electronic structure of the organic semiconductor copper-phthalocyanine (CuPc) has been determined by a combination of conventional and resonant photoemission, near-edge x-ray absorption, as well as by the first-principles calculations. The experimentally obtained electronic valence band structure of CuPc is in very good agreement with the calculated density of states results, allowing the derivation of detailed site specific information.

Plasmonically Enhanced Reflectance of Heat Radiation from Low-Bandgap Semiconductor Microinclusions.

PubMed

Tang, Janika; Thakore, Vaibhav; Ala-Nissila, Tapio

2017-07-18

Increased reflectance from the inclusion of highly scattering particles at low volume fractions in an insulating dielectric offers a promising way to reduce radiative thermal losses at high temperatures. Here, we investigate plasmonic resonance driven enhanced scattering from microinclusions of low-bandgap semiconductors (InP, Si, Ge, PbS, InAs and Te) in an insulating composite to tailor its infrared reflectance for minimizing thermal losses from radiative transfer. To this end, we compute the spectral properties of the microcomposites using Monte Carlo modeling and compare them with results from Fresnel equations. The role of particle size-dependent Mie scattering and absorption efficiencies, and, scattering anisotropy are studied to identify the optimal microinclusion size and material parameters for maximizing the reflectance of the thermal radiation. For composites with Si and Ge microinclusions we obtain reflectance efficiencies of 57-65% for the incident blackbody radiation from sources at temperatures in the range 400-1600 °C. Furthermore, we observe a broadbanding of the reflectance spectra from the plasmonic resonances due to charge carriers generated from defect states within the semiconductor bandgap. Our results thus open up the possibility of developing efficient high-temperature thermal insulators through use of the low-bandgap semiconductor microinclusions in insulating dielectrics.

Exploring the Physics of Unstable Nuclei

NASA Astrophysics Data System (ADS)

Volya, Alexander

In this presentation the Continuum Shell Model (CSM) approach is advertised as a powerful theoretical tool for studying physics of unstable nuclei. The approach is illustrated using 17O as an example, which is followed by a brief presentation of the general CSM formalism. The successes of the CSM are highlighted and references are provided throughout the text. As an example, the CSM is applied perturbatively to 20O allowing one to explore the effects of continuum on positions of weakly bound states and low-lying resonances, as well as to discern some effects of threshold discontinuity.

Free-electron laser spectroscopy in biology, medicine, and materials science; Proceedings of the Meeting, Los Angeles, CA, Jan. 22, 1993

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schwettman, H.A.

1993-01-01

Various papers on FEL spectroscopy in biology, medicine, and materials science are presented. Individual topics addressed include: Vanderbilt University FEL Center, FIR FEL facility at the University of California/Santa Barbara, FEL research facilities and opportunities at Duke, facilities at the Stanford Picosecond FEL Center, FIR nonlinear response of electrons in semiconductor nanostructures, FIR harmonic generation from semiconductor heterostructures, intrinsic response times of double-barrier resonant tunneling diodes at tetrahertz frequencies, semiconductor spectroscopy and ablation processes with the Vanderbilt FEL. Also discussed are: picosecond nonlinear optics in semiconductor quantum wells with the SCA FEL, excitation spectroscopy of thin-film disordered semiconductors, biophysical applicationmore » of FELs, FEL investigation of energy transfer in condensed phase systems, probing protein photochemistry and dynamics with ultrafast infrared spectroscopy, plasma ablation of hard tissues by FEL, FEL irradiation of the cornea.« less

Radiation Pressure, Poynting-Robertson Drag, and Solar Wind Drag in the Restricted Three-Body Problem

NASA Technical Reports Server (NTRS)

Liou, Jer-Chyi; Zook, Herbert A.; Jackson, A. A.

1995-01-01

In this paper, we examine the effects of radiation pressure, Poynting-Robertson (PR) drag, and solar wind drag on dust grains trapped in mean motion resonances with the Sun and Jupiter in the restricted (negligible dust mass) three-body Problem. We especially examine the evolution of dust grains in the 1:1 resonance. As a first step, the Sun and Jupiter are idealized to both be in circular orbit about a common center of mass (circular restricted three-body problem). From the equation of motion of the dust particle in the rotating reference frame, the drag-induced time rate of change of its Jacobi "constant," C, is then derived and expressed in spherical coordinates. This new mathematical expression in spherical coordinates shows that C, in the 1:1 resonance, both oscillates and secularly increases with increasing time. The new expression gives rise to an easy understanding of how an orbit evolves when the radiation force and solar wind drag are included. All dust grain orbits are unstable in time when PR and solar wind drag are included in the Sun-Jupiter-dust system. Tadpole orbits evolve into horseshoe orbits; and these orbits continuously expand in size to lead to close encounters with Jupiter. Permanent trapping is impossible. Orbital evolutions of a dust grain trapped in the 1:1 resonance in the planar circular, an inclined case, an eccentric case, and the actual Sun-Jupiter case are numerically simulated and compared with each other and show grossly similar time behavior. Resonances other than 1:1 are also explored with the new expression. Stable exterior resonance trapping may be possible under certain conditions. One necessary condition for such a trap is derived. Trapping in interior resonances is shown to be always unstable.

Coherent versus incoherent resonant emission: an experimental method for easy discrimination and measurement

NASA Astrophysics Data System (ADS)

Ceccherini, S.; Colocci, M.; Gurioli, M.; Bogani, F.

1998-11-01

The distinction between the coherent and the incoherent component of the radiation emitted from resonantly excited material systems is difficult experimentally, particularly when ultra-short optical pulses are used for excitation. We propose an experimental procedure allowing an easy measurement of the two components. The method is completely general and applicable to any kind of physical system; its feasibility is demonstrated on the resonant emission from excitons in a semiconductor quantum well.

Enhanced Second-Harmonic Generation Using Broken Symmetry III–V Semiconductor Fano Metasurfaces

DOE PAGES

Vabishchevich, Polina P.; Liu, Sheng; Sinclair, Michael B.; ...

2018-01-27

All-dielectric metasurfaces, two-dimensional arrays of subwavelength low loss dielectric inclusions, can be used not only to control the amplitude and phase of optical beams, but also to generate new wavelengths through enhanced nonlinear optical processes that are free from some of the constraints dictated by the use of bulk materials. Recently, high quality factor (Q) resonances in these metasurfaces have been revealed and utilized for applications such as sensing and lasing. The origin of these resonances stems from the interference of two nanoresonator modes with vastly different Q. Here we show that nonlinear optical processes can be further enhanced bymore » utilizing these high-Q resonances in broken symmetry all-dielectric metasurfaces. As a result, we study second harmonic generation from broken symmetry metasurfaces made from III–V semiconductors and observe nontrivial spectral shaping of second-harmonic and multifold efficiency enhancement induced by high field localization and enhancement inside the nanoresonators.« less

Micrometer-scale fabrication of complex three dimensional lattice + basis structures in silicon

DOE PAGES

Burckel, D. Bruce; Resnick, Paul J.; Finnegan, Patrick S.; ...

2015-01-01

A complementary metal oxide semiconductor (CMOS) compatible version of membrane projection lithography (MPL) for fabrication of micrometer-scale three-dimensional structures is presented. The approach uses all inorganic materials and standard CMOS processing equipment. In a single layer, MPL is capable of creating all 5 2D-Bravais lattices. Furthermore, standard semiconductor processing steps can be used in a layer-by-layer approach to create fully three dimensional structures with any of the 14 3D-Bravais lattices. The unit cell basis is determined by the projection of the membrane pattern, with many degrees of freedom for defining functional inclusions. Here we demonstrate several unique structural motifs, andmore » characterize 2D arrays of unit cells with split ring resonators in a silicon matrix. The structures exhibit strong polarization dependent resonances and, for properly oriented split ring resonators (SRRs), coupling to the magnetic field of a normally incident transverse electromagnetic wave, a response unique to 3D inclusions.« less

Collisional dependence of Alfvén mode saturation in tokamaks

DOE PAGES

Zhou, Muni; White, Roscoe

2016-10-26

Saturation of Alfvén modes driven unstable by a distribution of high energy particles as a function of collisionality is investigated with a guiding center code, using numerical eigenfunctions produced by linear theory and numerical high energy particle distributions. The most important resonance is found and it is shown that when the resonance domain is bounded, not allowing particles to collisionlessly escape, the saturation amplitude is given by the balance of the resonance mixing time with the time for nearby particles to collisionally diffuse across the resonance width. Finally, saturation amplitudes are in agreement with theoretical predictions as long as themore » mode amplitude is not so large that it produces stochastic loss from the resonance domain.« less

Collisional dependence of Alfvén mode saturation in tokamaks

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhou, Muni; White, Roscoe

Saturation of Alfvén modes driven unstable by a distribution of high energy particles as a function of collisionality is investigated with a guiding center code, using numerical eigenfunctions produced by linear theory and numerical high energy particle distributions. The most important resonance is found and it is shown that when the resonance domain is bounded, not allowing particles to collisionlessly escape, the saturation amplitude is given by the balance of the resonance mixing time with the time for nearby particles to collisionally diffuse across the resonance width. Finally, saturation amplitudes are in agreement with theoretical predictions as long as themore » mode amplitude is not so large that it produces stochastic loss from the resonance domain.« less

Strongly exchange-coupled triplet pairs in an organic semiconductor

NASA Astrophysics Data System (ADS)

Weiss, Leah R.; Bayliss, Sam L.; Kraffert, Felix; Thorley, Karl J.; Anthony, John E.; Bittl, Robert; Friend, Richard H.; Rao, Akshay; Greenham, Neil C.; Behrends, Jan

2017-02-01

From biological complexes to devices based on organic semiconductors, spin interactions play a key role in the function of molecular systems. For instance, triplet-pair reactions impact operation of organic light-emitting diodes as well as photovoltaic devices. Conventional models for triplet pairs assume they interact only weakly. Here, using electron spin resonance, we observe long-lived, strongly interacting triplet pairs in an organic semiconductor, generated via singlet fission. Using coherent spin manipulation of these two-triplet states, we identify exchange-coupled (spin-2) quintet complexes coexisting with weakly coupled (spin-1) triplets. We measure strongly coupled pairs with a lifetime approaching 3 μs and a spin coherence time approaching 1 μs, at 10 K. Our results pave the way for the utilization of high-spin systems in organic semiconductors.

DIFFRACTION SYNCHRONIZATION OF LASERS,

DTIC Science & Technology

semiconductor lasers while suppressing parasitic generation in the plane of the mirror. The diffraction coupling coefficient of open resonators is calculated, and the stability conditions of the synchronized system is determined.

Engineered Heterostructures of 6.1 A III-V Semiconductors for Advanced Electronic and Optoelectronic Applications

DTIC Science & Technology

1999-01-01

sensitive infrared detectors and mid- infrared semiconductor lasers. In this paper, we describe the ongoing work at the Naval Research Laboratory to develop...enormous flexibility in designing novel electronic and optical devices. Specifically, long-wave infrared (IR) detectors ,1 mid-wave IR lasers,2 high...frequency field effect transistors3 (FETs) and resonant interband tunneling diodes4 (RITDs) have been demonstrated. However, many of these applications

High Power Mid Wave Infrared Semiconductor Lasers

DTIC Science & Technology

2006-06-15

resonance and the gain spectrum. The devices were grown using solid source molecular beam epitaxy (MBE) in a V80 reactor. Two side polished, undoped...verify the inherent low activation energy. N-type and P-type AISb, and various compositions of InxAl 1xSb, were grown by solid-source molecular beam ...level monitoring. Advances in epitaxial growth of semiconductor materials have allowed the development of Arsenic- free optically-pumped MWIR lasers on

Rare resource supply crisis and solution technology for semiconductor manufacturing

NASA Astrophysics Data System (ADS)

Fukuda, Hitomi; Hu, Sophia; Yoo, Youngsun; Takahisa, Kenji; Enami, Tatsuo

2016-03-01

There are growing concerns over future environmental impact and earth resource shortage throughout the world and in many industries. Our semiconductor industry is not excluded. "Green" has become an important topic as production volume become larger and more powerful. Especially, the rare gases are widely used in semiconductor manufacturing because of its inertness and extreme chemical stability. One major component of an Excimer laser system is Neon. It is used as a buffer gas for Argon (Ar) and Krypton (Kr) gases used in deep ultraviolet (DUV) lithography laser systems. Since Neon gas accounting for more than 96% of the laser gas mixture, a fairly large amount of neon gas is consumed to run these DUV lasers. However, due to country's instability both in politics and economics in Ukraine, the main producer of neon gas today, supply reduction has become an issue and is causing increasing concern. This concern is not only based on price increases, but has escalated to the point of supply shortages in 2015. This poses a critical situation for the semiconductor industry, which represents the leading consumer of neon gas in the world. Helium is another noble gas used for Excimer laser operation. It is used as a purge gas for optical component modules to prevent from being damaged by active gases and impurities. Helium has been used in various industries, including for medical equipment, linear motor cars, and semiconductors, and is indispensable for modern life. But consumption of helium in manufacturing has been increased dramatically, and its unstable supply and price rise has been a serious issue today. In this article, recent global supply issue of rare resources, especially Neon gas and Helium gas, and its solution technology to support semiconductor industry will be discussed.

Design of bent waveguide semiconductor lasers using nonlinear equivalent chirp

NASA Astrophysics Data System (ADS)

Li, Lianyan; Shi, Yuechun; Zhang, Yunshan; Chen, Xiangfei

2018-01-01

Reconstruction equivalent chirp (REC) technique is widely used in the design and fabrication of semiconductor laser arrays and tunable lasers with low cost and high wavelength accuracy. Bent waveguide is a promising method to suppress the zeroth order resonance, which is an intrinsic problem in REC technique. However, it may introduce basic grating chirp and deteriorate the single longitudinal mode (SLM) property of the laser. A nonlinear equivalent chirp pattern is proposed in this paper to compensate the grating chirp and improve the SLM property. It will benefit the realization of low-cost Distributed feedback (DFB) semiconductor laser arrays with accurate lasing wavelength.

Self-contained sub-millimeter wave rectifying antenna integrated circuit

NASA Technical Reports Server (NTRS)

Siegel, Peter H. (Inventor)

2004-01-01

The invention is embodied in a monolithic semiconductor integrated circuit in which is formed an antenna, such as a slot dipole antenna, connected across a rectifying diode. In the preferred embodiment, the antenna is tuned to received an electromagnetic wave of about 2500 GHz so that the device is on the order of a wavelength in size, or about 200 microns across and 30 microns thick. This size is ideal for mounting on a microdevice such as a microrobot for example. The antenna is endowed with high gain in the direction of the incident radiation by providing a quarter-wavelength (30 microns) thick resonant cavity below the antenna, the cavity being formed as part of the monolithic integrated circuit. Preferably, the integrated circuit consists of a thin gallium arsenide membrane overlying the resonant cavity and supporting an epitaxial Gallium Arsenide semiconductor layer. The rectifying diode is a Schottky diode formed in the GaAs semiconductor layer and having an area that is a very small fraction of the wavelength of the 2500 GHz incident radiation. The cavity provides high forward gain in the antenna and isolation from surrounding structure.

Influence of the nuclear Zeeman effect on mode locking in pulsed semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Beugeling, Wouter; Uhrig, Götz S.; Anders, Frithjof B.

2017-09-01

The coherence of the electron spin in a semiconductor quantum dot is strongly enhanced by mode locking through nuclear focusing, where the synchronization of the electron spin to periodic pulsing is slowly transferred to the nuclear spins of the semiconductor material, mediated by the hyperfine interaction between these. The external magnetic field that drives the Larmor oscillations of the electron spin also subjects the nuclear spins to a Zeeman-like coupling, albeit a much weaker one. For typical magnetic fields used in experiments, the energy scale of the nuclear Zeeman effect is comparable to that of the hyperfine interaction, so that it is not negligible. In this work, we analyze the influence of the nuclear Zeeman effect on mode locking quantitatively. Within a perturbative framework, we calculate the Overhauser-field distribution after a prolonged period of pulsing. We find that the nuclear Zeeman effect can exchange resonant and nonresonant frequencies. We distinguish between models with a single type and with multiple types of nuclei. For the latter case, the positions of the resonances depend on the individual g factors, rather than on the average value.

Crisis of the chaotic attractor of a climate model: a transfer operator approach

NASA Astrophysics Data System (ADS)

Tantet, Alexis; Lucarini, Valerio; Lunkeit, Frank; Dijkstra, Henk A.

2018-05-01

The destruction of a chaotic attractor leading to rough changes in the dynamics of a dynamical system is studied. Local bifurcations are known to be characterised by a single or a pair of characteristic exponents crossing the imaginary axis. As a result, the approach of such bifurcations in the presence of noise can be inferred from the slowing down of the decay of correlations (Held and Kleinen 2004 Geophys. Res. Lett. 31 1–4). On the other hand, little is known about global bifurcations involving high-dimensional attractors with several positive Lyapunov exponents. It is known that the global stability of chaotic attractors may be characterised by the spectral properties of the Koopman (Mauroy and Mezić 2016 IEEE Trans. Autom. Control 61 3356–69) or the transfer operators governing the evolution of statistical ensembles. Accordingly, it has recently been shown (Tantet 2017 J. Stat. Phys. 1–33) that a boundary crisis in the Lorenz flow coincides with the approach to the unit circle of the eigenvalues of these operators associated with motions about the attractor, the stable resonances. A second class of resonances, the unstable resonances, are responsible for the decay of correlations and mixing on the attractor. In the deterministic case, these cannot be expected to be affected by general boundary crises. Here, however, we give an example of a chaotic system in which slowing down of the decay of correlations of some observables does occur at the approach of a boundary crisis. The system considered is a high-dimensional, chaotic climate model of physical relevance. Moreover, coarse-grained approximations of the transfer operators on a reduced space, constructed from a long time series of the system, give evidence that this behaviour is due to the approach of unstable resonances to the unit circle. That the unstable resonances are affected by the crisis can be physically understood from the fact that the process responsible for the instability, the ice-albedo feedback, is also active on the attractor. Finally, we discuss implications regarding response theory and the design of early-warning signals.

Phenomena of oscillations in atmospheric pressure direct current glow discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Fu-cheng; Yan, Wen; Wang, De-zhen

2013-12-15

Self-sustained oscillations in a dc glow discharge with a semiconductor layer at atmospheric pressure were investigated by means of a one-dimensional fluid model. It is found that the dc glow discharge initially becomes unstable in the subnormal glow region and gives rise to oscillations of plasma parameters. A variety of oscillations with one or more frequencies have been observed under different conditions. The discharge oscillates between the glow discharge mode and the Townsend discharge mode in the oscillations with large amplitude while operates in the subnormal glow discharge mode all the while in the oscillations with small amplitude. Fourier Transformmore » spectra of oscillations reveal the transition mechanism between different oscillations. The effects of semiconductor conductivity on the oscillation frequency of the dominant mode, gas voltage, as well as the discharge current have also been analyzed.« less

Electrical characteristics and thermal stability of HfO{sub 2} metal-oxide-semiconductor capacitors fabricated on clean reconstructed GaSb surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyata, Noriyuki, E-mail: nori.miyata@aist.go.jp; Mori, Takahiro; Yasuda, Tetsuji

2014-06-09

HfO{sub 2}/GaSb interfaces fabricated by high-vacuum HfO{sub 2} deposition on clean reconstructed GaSb surfaces were examined to explore a thermally stable GaSb metal-oxide-semiconductor structure with low interface-state density (D{sub it}). Interface Sb-O bonds were electrically and thermally unstable, and post-metallization annealing at temperatures higher than 200 °C was required to stabilize the HfO{sub 2}/GaSb interfaces. However, the annealing led to large D{sub it} in the upper-half band gap. We propose that the decomposition products that are associated with elemental Sb atoms act as interface states, since a clear correlation between the D{sub it} and the Sb coverage on the initial GaSbmore » surfaces was observed.« less

Resonance-enhanced optical forces between coupled photonic crystal slabs.

PubMed

Liu, Victor; Povinelli, Michelle; Fan, Shanhui

2009-11-23

The behaviors of lateral and normal optical forces between coupled photonic crystal slabs are analyzed. We show that the optical force is periodic with displacement, resulting in stable and unstable equilibrium positions. Moreover, the forces are strongly enhanced by guided resonances of the coupled slabs. Such enhancement is particularly prominent near dark states of the system, and the enhancement effect is strongly dependent on the types of guided resonances involved. These structures lead to enhancement of light-induced pressure over larger areas, in a configuration that is directly accessible to externally incident, free-space optical beams.

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

2011-07-01

We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

Nondestructive Superresolution Imaging of Defects and Nonuniformities in Metals, Semiconductors, Dielectrics, Composites, and Plants Using Evanescent Microwaves

NASA Technical Reports Server (NTRS)

Tabib-Azar, M.; Pathak, P. S.; Ponchak, G.; LeClair, S.

1999-01-01

We have imaged and mapped material nonuniformities and defects using microwaves generated at the end of a microstripline resonator with 0.4 micrometer lateral spatial resolution at 1 GHz. Here we experimentally examine the effect of microstripline substrate permittivity, the feedline-to-resonator coupling strength, and probe tip geometry on the spatial resolution of the probe. Carbon composites, dielectrics, semiconductors, metals, and botanical samples were scanned for defects, residual stresses, subsurface features, areas of different film thickness, and moisture content. The resulting evanescent microwave probe (EMP) images are discussed. The main objective of this work is to demonstrate the overall capabilities of the EMP imaging technique as well as to discuss various probe parameters that can be used to design EMPs for different applications.

Separating hyperfine from spin-orbit interactions in organic semiconductors by multi-octave magnetic resonance using coplanar waveguide microresonators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Joshi, G.; Miller, R.; Ogden, L.

2016-09-05

Separating the influence of hyperfine from spin-orbit interactions in spin-dependent carrier recombination and dissociation processes necessitates magnetic resonance spectroscopy over a wide range of frequencies. We have designed compact and versatile coplanar waveguide resonators for continuous-wave electrically detected magnetic resonance and tested these on organic light-emitting diodes. By exploiting both the fundamental and higher-harmonic modes of the resonators, we cover almost five octaves in resonance frequency within a single setup. The measurements with a common π-conjugated polymer as the active material reveal small but non-negligible effects of spin-orbit interactions, which give rise to a broadening of the magnetic resonance spectrummore » with increasing frequency.« less

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure.

PubMed

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J K; Deen, M Jamal; Qi, Bensheng

2015-03-16

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 10(17) cm(-3). A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm(2), the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure.

Resonance transition periodic orbits in the circular restricted three-body problem

NASA Astrophysics Data System (ADS)

Lei, Hanlun; Xu, Bo

2018-04-01

This work studies a special type of cislunar periodic orbits in the circular restricted three-body problem called resonance transition periodic orbits, which switch between different resonances and revolve about the secondary with multiple loops during one period. In the practical computation, families of multiple periodic orbits are identified first, and then the invariant manifolds emanating from the unstable multiple periodic orbits are taken to generate resonant homoclinic connections, which are used to determine the initial guesses for computing the desired periodic orbits by means of multiple-shooting scheme. The obtained periodic orbits have potential applications for the missions requiring long-term continuous observation of the secondary and tour missions in a multi-body environment.

Notes on the plasma resonance peak employed to determine doping in SiC

DOE PAGES

Engelbrecht, J. A. A.; van Rooyen, I. J.; Henry, A.; ...

2015-07-23

In this study, the doping level of a semiconductor material can be determined using the plasma resonance frequency to obtain the carrier concentration associated with doping. This paper provides an overview of the procedure for the three most common polytypes of SiC. Results for 3C-SiC are presented and discussed. In phosphorus doped samples analysed, it is submitted that the 2nd plasma resonance cannot be detected due to high values of the free carrier damping constant γ.

GaAs-based micro/nanomechanical resonators

NASA Astrophysics Data System (ADS)

Yamaguchi, Hiroshi

2017-10-01

Micro/nanomechanical resonators have been extensively studied both for device applications, such as high-performance sensors and high-frequency devices, and for fundamental science, such as quantum physics in macroscopic objects. The advantages of GaAs-based semiconductor heterostructures include improved mechanical properties through strain engineering, highly controllable piezoelectric transduction, carrier-mediated optomechanical coupling, and hybridization with quantum low-dimensional structures. This article reviews our recent activities, as well as those of other groups, on the physics and applications of mechanical resonators fabricated using GaAs-based heterostructures.

Resonant features of the terahertz generation in semiconductor nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Trukhin, V. N., E-mail: valera.truchin@mail.ioffe.ru; Bouravleuv, A. D.; Mustafin, I. A.

2016-12-15

The paper presents the results of experimental studies of the generation of terahertz radiation in periodic arrays of GaAs nanowires via excitation by ultrashort optical pulses. It is found that the generation of THz radiation exhibits resonant behavior due to the resonant excitation of cylindrical modes in the nanowires. At the optimal geometric parameters of the nanowire array, the generation efficiency is found to be higher than that for bulk p-InAs, which is one of the most effective coherent terahertz emitters.

Resonant optical device with a microheater

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lentine, Anthony L.; DeRose, Christopher

2017-04-04

A resonant photonic device is provided. The device comprises an optical waveguiding element, such as an optical resonator, that includes a diode junction region, two signal terminals configured to apply a bias voltage across the junction region, and a heater laterally separated from the optical waveguiding element. A semiconductor electrical barrier element is juxtaposed to the heater. A metallic strip is electrically and thermally connected at one end to a signal terminal of the optical waveguiding element and thermally connected at another end to the barrier element.

Validation of the model for ELM suppression with 3D magnetic fields using low torque ITER baseline scenario discharges in DIII-D

DOE PAGES

Moyer, Richard A.; Paz-Soldan, Carlos; Nazikian, Raffi; ...

2017-09-18

Here, experiments have been executed in the DIII-D tokamak to extend suppression of Edge Localized Modes (ELMs) with Resonant Magnetic Perturbations (RMPs) to ITER-relevant levels of beam torque. The results support the hypothesis for RMP ELM suppression based on transition from an ideal screened response to a tearing response at a resonant surface that prevents expansion of the pedestal to an unstable width.

Theory of active mode locking of a semiconductor laser in an external cavity

NASA Technical Reports Server (NTRS)

Yeung, J. A.

1981-01-01

An analytical treatment is given for the active mode locking of a semiconductor laser in an external resonator. The width of the mode-locked pulses is obtained as a function of the laser and cavity parameters and the amount of frequency detuning. The effects of self-modulation and saturation are included in the treatment. The pulse output is compared with that obtained by a strong modulation of the laser diode with no external cavity.

Dielectric behavior of semiconductors at microwave frequencies

NASA Technical Reports Server (NTRS)

Dahiya, Jai N.

1992-01-01

A cylindrical microwave resonant cavity in TE(011) (Transverse Electric) mode is used to study the dielectric relaxation in germanium and silicon. The samples of these semiconductors are used to perturb the electric field in the cavity, and Slater's perturbation equations are used to calculate the real and imaginary parts of the dielectric constant. The dielectric loss of germanium and silicon is studied at different temperatures, and Debye's equations are used to calculate the relaxation time at these temperatures.

Polariton-acoustic-phonon interaction in a semiconductor microcavity

NASA Astrophysics Data System (ADS)

Cassabois, G.; Triques, A. L. C.; Bogani, F.; Delalande, C.; Roussignol, Ph.; Piermarocchi, C.

2000-01-01

The broadening of polariton lines by acoustic phonons is investigated in a semiconductor microcavity by means of interferometric correlation measurements with subpicosecond resolution. A decrease of the polariton-acoustic phonon coupling is clearly observed for the lower polariton branch as one approaches the resonance between exciton and photon states. This behavior cannot be explained in terms of a semiclassical linear dispersion theory but requires a full quantum description of the microcavity in the strong-coupling regime.

Plasmon-induced carrier polarization in semiconductor nanocrystals.

PubMed

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V

2018-06-01

Spintronics 1 and valleytronics 2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals 3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In 2 O 3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes 11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

Plasmon-induced carrier polarization in semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V.

2018-06-01

Spintronics1 and valleytronics2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In2O3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

Optimum design on refrigeration system of high-repetition-frequency laser

NASA Astrophysics Data System (ADS)

Li, Gang; Li, Li; Jin, Yezhou; Sun, Xinhua; Mao, Shaojuan; Wang, Yuanbo

2014-12-01

A refrigeration system with fluid cycle, semiconductor cooler and air cooler is designed to solve the problems of thermal lensing effect and unstable output of high-repetition-frequency solid-state lasers. Utilizing a circulating water pump, water recycling system carries the water into laser cavity to absorb the heat then get to water cooling head. The water cooling head compacts cold spot of semiconductor cooling chips, so the heat is carried to hot spot which contacts the radiating fins, then is expelled through cooling fan. Finally, the cooled water return to tank. The above processes circulate to achieve the purposes of highly effective refrigeration in miniative solid-state lasers.The refrigeration and temperature control components are designed strictly to ensure refrigeration effect and practicability. we also set up a experiment to test the performances of this refrigeration system, the results show that the relationship between water temperature and cooling power of semiconductor cooling chip is linear at 20°C-30°C (operating temperature range of Nd:YAG), the higher of the water temperature, the higher of cooling power. According to the results, cooling power of single semiconductor cooling chip is above 60W, and the total cooling power of three semiconductor cooling chips achieves 200W that will satisfy the refrigeration require of the miniative solid-state lasers.The performance parameters of laser pulse are also tested, include pulse waveform, spectrogram and laser spot. All of that indicate that this refrigeration system can ensure the output of high-repetition-frequency pulse whit high power and stability.

Electron-Spin Filters Based on the Rashba Effect

NASA Technical Reports Server (NTRS)

Ting, David Z.-Y.; Cartoixa, Xavier; McGill, Thomas C.; Moon, Jeong S.; Chow, David H.; Schulman, Joel N.; Smith, Darryl L.

2004-01-01

Semiconductor electron-spin filters of a proposed type would be based on the Rashba effect, which is described briefly below. Electron-spin filters more precisely, sources of spin-polarized electron currents have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-based electronics). There have been a number of successful demonstrations of injection of spin-polarized electrons from diluted magnetic semiconductors and from ferromagnetic metals into nonmagnetic semiconductors. In contrast, a device according to the proposal would be made from nonmagnetic semiconductor materials and would function without an applied magnetic field. The Rashba effect, named after one of its discoverers, is an energy splitting, of what would otherwise be degenerate quantum states, caused by a spin-orbit interaction in conjunction with a structural-inversion asymmetry in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. The present proposal evolved from recent theoretical studies that suggested the possibility of devices in which electron energy states would be split by the Rashba effect and spin-polarized currents would be extracted by resonant quantum-mechanical tunneling. Accordingly, a device according to the proposal would be denoted an asymmetric resonant interband tunneling diode [a-RITD]. An a-RITD could be implemented in a variety of forms, the form favored in the proposal being a double-barrier heterostructure containing an asymmetric quantum well. It is envisioned that a-RITDs would be designed and fabricated in the InAs/GaSb/AlSb material system for several reasons: Heterostructures in this material system are strong candidates for pronounced Rashba spin splitting because InAs and GaSb exhibit large spin-orbit interactions and because both InAs and GaSb would be available for the construction of highly asymmetric quantum wells. This mate-rial system affords a variety of energy-band alignments that can be exploited to obtain resonant tunneling and other desired effects. The no-common-atom InAs/GaSb and InAs/AlSb interfaces would present opportunities for engineering interface potentials for optimizing Rashba spin splitting.

Monolithic integration of a resonant tunneling diode and a quantum well semiconductor laser

NASA Astrophysics Data System (ADS)

Grave, I.; Kan, S. C.; Griffel, G.; Wu, S. W.; Sa'Ar, A.

1991-01-01

A monolithic integration of a double barrier AlAs/GaAs resonant tunneling diode and a GaAs/AlGaAs quantum well laser is reported. Negative differential resistance and negative differential optical response are observed at room temperature. The device displays bistable electrical and optical characteristics which are voltage controlled. Operation as a two-state optical memory is demonstrated.

Low-Loss Optical Metamaterials Based on Mie Resonances in Semiconductor Nanoparticle Composites

DTIC Science & Technology

2012-12-13

Brillouin zone where two transverse bands with linear dispersion intersect a flat longitudinal band, resulting in triple degeneracy. The fields in the...transmission pattern through Fourier plane imaging. This was accomplished by focusing a laser beam within the structure using a high numerical...conditions, a high frequency magnetic response could be created in metamaterials formed from composites of quantum dots utilizing excitonic resonances

Progress and Perspectives of Plasmon-Enhanced Solar Energy Conversion.

PubMed

Cushing, Scott K; Wu, Nianqiang

2016-02-18

Plasmonics allows extraordinary control of light, making it attractive for application in solar energy harvesting. In metal-semiconductor heterojunctions, plasmons can enhance photoconversion in the semiconductor via three mechanisms, including light trapping, hot electron/hole transfer, and plasmon-induced resonance energy transfer (PIRET). To understand the plasmonic enhancement, the metal's geometry, constituent metal, and interface must be viewed in terms of the effects on the plasmon's dephasing and decay route. To simplify design of plasmonic metal-semiconductor heterojunctions for high-efficiency solar energy conversion, the parameters controlling the plasmonic enhancement can be distilled to the dephasing time. The plasmonic geometry can then be further refined to optimize hot carrier transfer, PIRET, or light trapping.

Delta connected resonant snubber circuit

DOEpatents

Lai, J.S.; Peng, F.Z.; Young, R.W. Sr.; Ott, G.W. Jr.

1998-01-20

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter. 36 figs.

Delta connected resonant snubber circuit

DOEpatents

Lai, Jih-Sheng; Peng, Fang Zheng; Young, Sr., Robert W.; Ott, Jr., George W.

1998-01-01

A delta connected, resonant snubber-based, soft switching, inverter circuit achieves lossless switching during dc-to-ac power conversion and power conditioning with minimum component count and size. Current is supplied to the resonant snubber branches solely by the dc supply voltage through the main inverter switches and the auxiliary switches. Component count and size are reduced by use of a single semiconductor switch in the resonant snubber branches. Component count is also reduced by maximizing the use of stray capacitances of the main switches as parallel resonant capacitors. Resonance charging and discharging of the parallel capacitances allows lossless, zero voltage switching. In one embodiment, circuit component size and count are minimized while achieving lossless, zero voltage switching within a three-phase inverter.

Entangling distant resonant exchange qubits via circuit quantum electrodynamics

NASA Astrophysics Data System (ADS)

Srinivasa, V.; Taylor, J. M.; Tahan, Charles

2016-11-01

We investigate a hybrid quantum system consisting of spatially separated resonant exchange qubits, defined in three-electron semiconductor triple quantum dots, that are coupled via a superconducting transmission line resonator. Drawing on methods from circuit quantum electrodynamics and Hartmann-Hahn double resonance techniques, we analyze three specific approaches for implementing resonator-mediated two-qubit entangling gates in both dispersive and resonant regimes of interaction. We calculate entangling gate fidelities as well as the rate of relaxation via phonons for resonant exchange qubits in silicon triple dots and show that such an implementation is particularly well suited to achieving the strong coupling regime. Our approach combines the favorable coherence properties of encoded spin qubits in silicon with the rapid and robust long-range entanglement provided by circuit QED systems.

The effect of topography on the evolution of unstable disturbances in a baroclinic atmosphere

NASA Technical Reports Server (NTRS)

Clark, J. H. E.

1985-01-01

A two layer spectral quasi-geostrophic model is used to simulate the effects of topography on the equilibria, their stability, and the long term evolution of incipient unstable waves. The flow is forced by latitudinally dependent radiative heating. Dissipation is in the form of Rayleigh friction. An analytical solution is found for the propagating finite amplitude waves which result from baroclinic instability of the zonal winds when topography is absent. The appearance of this solution for wavelengths just longer than the Rossby radius of deformation and disappearance of ultra-long wavelengths is interpreted in terms of the Hopf bifurcation theory. Simple dynamic and thermodynamic criteria for the existence of periodic Rossby solutions are presented. A Floquet stability analysis shows that the waves are neutral. The nature of the form drag instability of high index equilibria is investigated. The proximity of the equilibrium shear to a resonant value is essential for the instability, provided the equilibrium occurs at a slightly stronger shear than resonance.

Frequency stabilization in injection controlled pulsed CO2 lasers

NASA Technical Reports Server (NTRS)

Menzies, Robert T.; Ancellet, Gerard M.

1987-01-01

Longitudinal mode selection by injection has been demonstrated as a viable technique for tailoring a TEA-CO2 laser with pulse energies of a Joule or greater to fit the requirements of a coherent lidar transmitter. Once reliable generation of single-longitudinal-mode (SLM) pulses is obtained, one can study the intrapulse frequency variation and attempt to determine the sources of frequency sweeping, or chirp. These sources include the effect of the decaying plasma, the thermal gradient due to the energy dissipation associated with the laser mechanism itself, and the pressure shift of the center frequency of the laser transition. The use of the positive-branch unstable resonator as an efficient means of coupling a discharge with transverse spatial dimensions of the order of centimeters to an optical cavity mode introduces another concern: namely, what can be done to emphasize transverse mode discrimination in an unstable resonator cavity while maintaining high coupling efficiency. These issues are briefly discussed in the paper, and representative experimental examples are included.

Latest developments in resonantly diode-pumped Er:YAG lasers

NASA Astrophysics Data System (ADS)

Kudryashov, Igor; Garbuzov, Dmitri; Dubinskii, Mark

2007-04-01

Significant performance improvement of the Er(0.5%):YAG diode pumped solid state laser (DPSSL) has been achieved by pump diode spectral narrowing via implementation of an external volumetric Bragg grating (VBG). Without spectral narrowing, with a pump path length of 15 mm, only 37% of 1532 nm pump was absorbed. After the VBG spectral narrowing, the absorption of the pumping radiation increased to 62 - 70%. As a result, the incident power threshold was reduced by a factor of 2.5, and the efficiency increased by a factor of 1.7, resulting in a slope efficiency of ~23 - 30%. A maximum of 51 W of CW power was obtained versus 31 W without the pump spectrum narrowing. More than 180 mJ QCW pulse output energy was obtained in a stable-unstable resonator configuration with a beam quality of M2 = 1.3 in the stable direction and M2 = 1.1 in the unstable direction. The measured slope efficiency was 0.138 J/J with a threshold energy of 0.91 J.

Grating tuned unstable resonator laser cavity

DOEpatents

Johnson, Larry C.

1982-01-01

An unstable resonator to be used in high power, narrow line CO.sub.2 pump lasers comprises an array of four reflectors in a ring configuration wherein spherical and planar wavefronts are separated from each other along separate optical paths and only the planar wavefronts are impinged on a plane grating for line tuning. The reflector array comprises a concave mirror for reflecting incident spherical waves as plane waves along an output axis to form an output beam. A plane grating on the output axis is oriented to reflect a portion of the output beam off axis onto a planar relay mirror spaced apart from the output axis in proximity to the concave mirror. The relay mirror reflects plane waves from the grating to impinge on a convex expanding mirror spaced apart from the output axis in proximity to the grating. The expanding mirror reflects the incident planar waves as spherical waves to illuminate the concave mirror. Tuning is provided by rotating the plane grating about an axis normal to the output axis.

Ring-resonator-integrated tunable external cavity laser employing EAM and SOA.

PubMed

Yoon, Ki-Hong; Kwon, O-Kyun; Kim, Ki Soo; Choi, Byung-Seok; Oh, Su Hwan; Kim, Hyun Su; Sim, Jae-Sik; Kim, Chul Soo

2011-12-05

We propose and demonstrate a tunable external cavity laser (ECL) composed of a polymer Bragg reflector (PBR) and integrated gain chip with gain, a ring resonator, an electro-absorption modulator (EAM), and a semiconductor optical amplifier (SOA). The cavity of the laser is composed of the PBR, gain, and ring resonator. The ring resonator reflects the predetermined wavelengths into the gain region and transmits the output signal into integrated devices such as the EAM and SOA. The output wavelength of the tunable laser is discretely tuned in steps of about 0.8 nm through the thermal-optic effect of the PBR and predetermined mode spacing of the ring resonator.

Fabrication of Ta2O5/GeNx gate insulator stack for Ge metal-insulator-semiconductor structures by electron-cyclotron-resonance plasma nitridation and sputtering deposition techniques

NASA Astrophysics Data System (ADS)

Otani, Yohei; Itayama, Yasuhiro; Tanaka, Takuo; Fukuda, Yukio; Toyota, Hiroshi; Ono, Toshiro; Mitsui, Minoru; Nakagawa, Kiyokazu

2007-04-01

The authors have fabricated germanium (Ge) metal-insulator-semiconductor (MIS) structures with a 7-nm-thick tantalum pentaoxide (Ta2O5)/2-nm-thick germanium nitride (GeNx) gate insulator stack by electron-cyclotron-resonance plasma nitridation and sputtering deposition. They found that pure GeNx ultrathin layers can be formed by the direct plasma nitridation of the Ge surface without substrate heating. X-ray photoelectron spectroscopy revealed no oxidation of the GeNx layer after the Ta2O5 sputtering deposition. The fabricated MIS capacitor with a capacitance equivalent thickness of 4.3nm showed excellent leakage current characteristics. The interface trap density obtained by the modified conductance method was 4×1011cm-2eV-1 at the midgap.

Low threshold diode-pumped picosecond mode-locked Nd:YAG laser with a semiconductor saturable absorber mirror

NASA Astrophysics Data System (ADS)

Eshghi, M. J.; Majdabadi, A.; Koohian, A.

2017-01-01

In this paper, a low threshold diode pumped passively mode-locked Nd:YAG laser has been demonstrated by using a semiconductor saturable absorber mirror. The threshold power for continuous-wave mode-locking is relatively low, about 3.2 W. The resonator stability across the pump power has been analytically examined. Moreover, the mode overlap between the pump beam and the laser fundamental mode has been simulated by MATLAB software. Adopting Z-shaped resonator configuration and suitable design of the resonator’s arm lengths, has enabled the author to prepare mode-locking conditions, and obtain 40 ps pulses with 112 MHz pulse repetition rate. The laser output was stable without any Q switched instability. To the best of our knowledge, this is the lowest threshold for CW mode-locking operation of a Nd:YAG laser.

Simulations of resonant Raman response in bundles of semiconductor carbon nanotubes

NASA Astrophysics Data System (ADS)

Roslyak, Oleksiy; Piryatinski, Andrei; Doorn, Stephen; Haroz, Erik; Telg, Hagen; Duque, Juan; Crochet, Jared; Simpson, J. R.; Hight Walker, A. R.; LANL Collaboration; Fordham Collaboration; NIST Collaboration

This work is motivated by an experimental study of resonant Raman spectroscopy under E22 excitation, which shows a new, sharp feature associated with bundling in (6,5) semiconductor carbon nanotubes. In order to provide an insight into the experimental data, we model Raman excitation spectra using our modified discrete dipole approximation (DDA) method. The calculations account for the exciton states polarized along and across the nanotube axis that are characterized by a small energy splitting. Strong polarization of the nanotubes forming the bundle results in the exciton state mixing whose spectroscopic signatures such as peaks positions, line widths, and depolarization ratio are calculated and compared to the experiment. Furthermore, the effects of the energy and structural disorder, as well as structural defects within the bundle are also examined and compared with the experimental data.

Simulations of resonant Raman response in bundles of semiconductor carbon nanotubes

NASA Astrophysics Data System (ADS)

Roslyak, Oleksiy; Doorn, Stephen; Haroz, Erik; Duque, Juan; Crochet, Jared; Telg, Hagen; Hight Walker, Angela; Simpson, Jeffrey; Piryatinski, Andrei

This work is motivated by experimental study of resonant Raman response associated with E22 exciton state coupled to G+-mode vibrational mode in bundles of (6,5) semiconductor carbon nanotubes. In order to provide an insight into experimental data, we model Raman excitation spectra using our modified discrete dipole approximation (DDA) method. The calculations account for the exciton states polarized along and across the nanotube axis that are characterized by a small energy splitting. Strong polarization of the nanotubes forming the bundle results in the exciton state mixing whose spectroscopic signatures such as peaks positions, line widths, and depolarization ratio are calculated and compared to the experiment. Furthermore, the effects of the energy and structural disorder, as well as structural defects within the bundle are also examined and compared with the experimental data.

Nonlinear THz absorption and cyclotron resonance in InSb

NASA Astrophysics Data System (ADS)

Heffernan, Kate; Yu, Shukai; Talbayev, Diyar

The emergence of coherent high-field terahertz (THz) sources in the past decade has allowed the exploration of nonlinear light-matter interaction at THz frequencies. Nonlinear THz response of free electrons in semiconductors has received a great deal of attention. Such nonlinear phenomena as saturable absorption and self-phase modulation have been reported. InSb is a narrow-gap (bandgap 0.17 eV) semiconductor with a very low electron effective mass and high electron mobility. Previous high-field THz work on InSb reported the observation of ultrafast electron cascades via impact ionization. We study the transmission of an intense THz electric field pulse by an InSb wafer at different incident THz amplitudes and 10 K temperature. Contrary to previous reports, we observe an increased transmission at higher THz field. Our observation appears similar to the saturable THz absorption reported in other semiconductors. Along with the increased absorption, we observe a strong modulation of the THz phase at high incident fields, most likely due to the self-phase modulation of the THz pulse. We also study the dependence of the cyclotron resonance on the incident THz field amplitude. The cyclotron resonance exhibits a lower strength and frequency at the higher incident THz field. The work at Tulane was supported by the Louisiana Board of Regents through the Board of Regents Support Fund Contract No. LEQSF(2012-15)-RD-A-23 and through the Pilot Funding for New Research (PFund) Contract No. LEQSF-EPS(2014)-PFUND-378.

Mass sensing AlN sensors for waste water monitoring

NASA Astrophysics Data System (ADS)

Porrazzo, R.; Potter, G.; Lydecker, L.; Foraida, Z.; Gattu, S.; Tokranova, N.; Castracane, J.

2014-08-01

Monitoring the presence of nanomaterials in waste water from semiconductor facilities is a critical task for public health organizations. Advanced semiconductor technology allows the fabrication of sensitive piezoelectric-based mass sensors with a detection limit of less than 1.35 ng/cm2 of nanomaterials such as nanoparticles of alumina, amorphous silica, ceria, etc. The interactions between acoustic waves generated by the piezoelectric sensor and nanomaterial mass attached to its surface define the sensing response as a shift in the resonant frequency. In this article the development and characterization of a prototype AlN film bulk acoustic resonator (FBAR) are presented. DC reactive magnetron sputtering was used to create tilted c-axis oriented AlN films to generate shear waves which don't propagate in liquids thus minimizing the acoustic losses. The high acoustic velocity of AlN over quartz allows an increase in resonance frequency in comparison with a quartz crystal microbalance (QCM) and results in a higher frequency shift per mass change, and thus greater sensitivity. The membrane and electrodes were fabricated using state of the art semiconductor technology. The device surface functionalization was performed to demonstrate selectivity towards a specific nanomaterial. As a result, the devices were covered with a "docking" layer that allows the nanomaterials to be selectively attached to the surface. This was achieved using covalent modification of the surface, specifically targeting ZnO nanoparticles. Our functionalization approach was tested using two different types of nanoparticles, and binding specificity was confirmed with various analytical techniques.

Energy and technology review: Engineering modeling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cabayan, H.S.; Goudreau, G.L.; Ziolkowski, R.W.

1986-10-01

This report presents information concerning: Modeling Canonical Problems in Electromagnetic Coupling Through Apertures; Finite-Element Codes for Computing Electrostatic Fields; Finite-Element Modeling of Electromagnetic Phenomena; Modeling Microwave-Pulse Compression in a Resonant Cavity; Lagrangian Finite-Element Analysis of Penetration Mechanics; Crashworthiness Engineering; Computer Modeling of Metal-Forming Processes; Thermal-Mechanical Modeling of Tungsten Arc Welding; Modeling Air Breakdown Induced by Electromagnetic Fields; Iterative Techniques for Solving Boltzmann's Equations for p-Type Semiconductors; Semiconductor Modeling; and Improved Numerical-Solution Techniques in Large-Scale Stress Analysis.

Polariton solitons and nonlinear localized states in a one-dimensional semiconductor microcavity

NASA Astrophysics Data System (ADS)

Chen, Ting-Wei; Cheng, Szu-Cheng

2018-01-01

This paper presents numerical studies of cavity polariton solitons (CPSs) in a resonantly pumped semiconductor microcavity with an imbedded spatial defect. In the bistable regime of the well-known homogeneous polariton condensate, with proper incident wave vector and pump strength, bright and/or dark cavity solitons can be found in the presence of a spatially confined potential. The minimum pump strength required to observe the CPSs or nonlinear localized states in this parametric pump scheme is therefore reported.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

PubMed

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Coherent Exciton Dynamics in GaAs-Based Semiconductor Structures

NASA Astrophysics Data System (ADS)

Colocci, M.; Bogani, F.; Ceccherini, S.; Gurioli, M.

We show that a very powerful tool in the investigation of the coherent exciton dynamics in semiconductors is provided by the study of the emitted light after resonant excitation from pairs of phase-locked femtosecond pulses. Under these conditions, not only the full dynamics of the coherent transients (dephasing times, quantum beat periods, etc.) can be obtained from linear experiments, but it can also be obtained a straightforward discrimination between the coherent or incoherent character of the emission by means of spectral filtering.

Design of a 3T preamplifier which stability is insensitive to coil loading

NASA Astrophysics Data System (ADS)

Cao, Xueming; Fischer, Elmar; Korvink, Jan G.; Gruschke, Oliver; Hennig, Jürgen; Zaitsev, Maxim

2016-04-01

In MRI (magnetic resonance imaging), preamplifiers are needed to amplify signals obtained from MRI receiver coils. Under various loading conditions of the corresponding receiver coils, preamplifiers see different source impedance at their input and may become unstable. Therefore preamplifiers which stability is not sensitive to coil loading are desirable. In this article, a coil-loading-insensitive preamplifier for MRI is presented, derived from an unstable preamplifier. Different approaches to improve stability were used during this derivation. Since a very low noise factor is essential for MRI preamplifiers, noise contributions from passive components in the MRI preamplifier have to be considered during the stabilization process. As a result, the initially unstable preamplifier became stable with regard to coil loading, while other MRI requirements, as the extremely low noise factor, were still fulfilled. The newly designed preamplifier was manufactured, characterized and tested in the MRI spectrometer. Compared to a commercially available preamplifier, the newly designed preamplifier has similar imaging performance but other advantages like smaller size and better stability. Furthermore, presented stabilization approaches can be generalized to stabilize other unstable low-noise amplifiers.

Nonlinear THz Plamonic Disk Resonators

NASA Astrophysics Data System (ADS)

Seren, Huseyin; Zhang, Jingdi; Keiser, George; Maddox, Scott; Fan, Kebin; Cao, Lingyue; Bank, Seth; Zhang, Xin; Averitt, Richard

2013-03-01

Particle surface plasmons (PPSs) at visible wavelengths continue to be actively investigated with the goal of nanoscale control of light. In contrast, terahertz (THz) surface plasmon experiments are at a nascent stage of investigation. Doped semiconductors with proper carrier density and mobility support THz PSPs. One approach is to utilize thick doped films etched into subwavelength disks. Given the ease of tuning the semiconductor carrier density, THz PSPs are tunable and exhibit interesting nonlinear THz plasmonic effects. We created THz PSP structures using MBE grown 2um thick InAs films with a doping concentration of 1e17cm-3 on 500um thick semi-insulating GaAs substrate. We patterned 40um diameter disks with a 60um period by reactive ion etching. Our THz time-domain measurements reveal a resonance at 1.1THz which agrees well with simulation results using a Drude model. A nonlinear response occurs at high THz electric field strengths (>50kV/cm). In particular, we observed a redshift and quenching of the resonance due to impact ionization which resulted in changes in the carrier density and effective mass due to inter-valley scattering.

Analysis of series resonant converter with series-parallel connection

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren; Huang, Chien-Lan

2011-02-01

In this study, a parallel inductor-inductor-capacitor (LLC) resonant converter series-connected on the primary side and parallel-connected on the secondary side is presented for server power supply systems. Based on series resonant behaviour, the power metal-oxide-semiconductor field-effect transistors are turned on at zero voltage switching and the rectifier diodes are turned off at zero current switching. Thus, the switching losses on the power semiconductors are reduced. In the proposed converter, the primary windings of the two LLC converters are connected in series. Thus, the two converters have the same primary currents to ensure that they can supply the balance load current. On the output side, two LLC converters are connected in parallel to share the load current and to reduce the current stress on the secondary windings and the rectifier diodes. In this article, the principle of operation, steady-state analysis and design considerations of the proposed converter are provided and discussed. Experiments with a laboratory prototype with a 24 V/21 A output for server power supply were performed to verify the effectiveness of the proposed converter.

Quantum many-body correlations in collective phonon-excitations

NASA Astrophysics Data System (ADS)

Droenner, Leon; Kabuss, Julia; Carmele, Alexander

2018-02-01

We present a theoretical study of a many-emitter phonon laser based on optically driven semiconductor quantum dots placed within an acoustic nanocavity. A transformation of the phonon laser Hamiltonian leads to a Tavis-Cummings type interaction with an unexpected additional many-emitter energy shift. This many-emitter interaction with the cavity mode results in a variety of phonon resonances which dependent strongly on the number of participating emitters. These collective resonances show the highest phonon output. Furthermore, we show that the output can be increased even more via lasing at the two phonon resonance.

Voltage-controlled spin selection in a magnetic resonant tunneling diode.

PubMed

Slobodskyy, A; Gould, C; Slobodskyy, T; Becker, C R; Schmidt, G; Molenkamp, L W

2003-06-20

We have fabricated all II-VI semiconductor resonant tunneling diodes based on the (Zn,Mn,Be)Se material system, containing dilute magnetic material in the quantum well, and studied their current-voltage characteristics. When subjected to an external magnetic field the resulting spin splitting of the levels in the quantum well leads to a splitting of the transmission resonance into two separate peaks. This is interpreted as evidence of tunneling transport through spin polarized levels, and could be the first step towards a voltage controlled spin filter.

Curved grating fabrication techniques for concentric-circle grating, surface-emitting semiconductor lasers

NASA Technical Reports Server (NTRS)

Jordan, Rebecca H.; King, Oliver; Wicks, Gary W.; Hall, Dennis G.; Anderson, Erik H.; Rooks, Michael J.

1993-01-01

We describe the fabrication and operational characteristics of a novel, surface-emitting semiconductor laser that makes use of a concentric-circle grating to both define its resonant cavity and to provide surface emission. A properly fabricated circular grating causes the laser to operate in radially inward- and outward-going circular waves in the waveguide, thus, introducing the circular symmetry needed for the laser to emit a beam with a circular cross-section. The basic circular-grating-resonator concept can be implemented in any materials system; an AlGaAs/GaAs graded-index, separate confinement heterostructure (GRINSCH), single-quantum-well (SQW) semiconductor laser, grown by molecular beam epitaxy (MBE), was used for the experiments discussed here. Each concentric-circle grating was fabricated on the surface of the AlGaAs/GaAs semiconductor laser. The circular pattern was first defined by electron-beam (e-beam) lithography in a layer of polymethylmethacrylate (PMMA) and subsequently etched into the semiconductor surface using chemically-assisted (chlorine) ion-beam etching (CAIBE). We consider issues that affect the fabrication and quality of the gratings. These issues include grating design requirements, data representation of the grating pattern, and e-beam scan method. We provide examples of how these techniques can be implemented and their impact on the resulting laser performance. A comparison is made of the results obtained using two fundamentally different electron-beam writing systems. Circular gratings with period lambda = 0.25 microns and overall diameters ranging from 80 microns to 500 microns were fabricated. We also report our successful demonstration of an optically pumped, concentric-circle grating, semiconductor laser that emits a beam with a far-field divergence angle that is less than one degree. The emission spectrum is quite narrow (less than 0.1 nm) and is centered at wavelength lambda = 0.8175 microns.

Inductively Coupled Plasma and Electron Cyclotron Resonance Plasma Etching of InGaAlP Compound Semiconductor System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abernathy, C.R.; Hobson, W.S.; Hong, J.

1998-11-04

Current and future generations of sophisticated compound semiconductor devices require the ability for submicron scale patterning. The situation is being complicated since some of the new devices are based on a wider diversity of materials to be etched. Conventional IUE (Reactive Ion Etching) has been prevalent across the industry so far, but has limitations for materials with high bond strengths or multiple elements. IrI this paper, we suggest high density plasmas such as ECR (Electron Cyclotron Resonance) and ICP (Inductively Coupled Plasma), for the etching of ternary compound semiconductors (InGaP, AIInP, AlGaP) which are employed for electronic devices like heterojunctionmore » bipolar transistors (HBTs) or high electron mobility transistors (HEMTs), and photonic devices such as light-emitting diodes (LEDs) and lasers. High density plasma sources, opeiating at lower pressure, are expected to meet target goals determined in terms of etch rate, surface morphology, surface stoichiometry, selectivity, etc. The etching mechanisms, which are described in this paper, can also be applied to other III-V (GaAs-based, InP-based) as well as III-Nitride since the InGaAIP system shares many of the same properties.« less

Nanoimprinted Hybrid Metal-Semiconductor Plasmonic Multilayers with Controlled Surface Nano Architecture for Applications in NIR Detectors

PubMed Central

Khosroabadi, Akram A.; Gangopadhyay, Palash; Hernandez, Steven; Kim, Kyungjo; Peyghambarian, Nasser; Norwood, Robert A.

2015-01-01

We present a proof of concept for tunable plasmon resonance frequencies in a core shell nano-architectured hybrid metal-semiconductor multilayer structure, with Ag as the active shell and ITO as the dielectric modulation media. Our method relies on the collective change in the dielectric function within the metal semiconductor interface to control the surface. Here we report fabrication and optical spectroscopy studies of large-area, nanostructured, hybrid silver and indium tin oxide (ITO) structures, with feature sizes below 100 nm and a controlled surface architecture. The optical and electrical properties of these core shell electrodes, including the surface plasmon frequency, can be tuned by suitably changing the order and thickness of the dielectric layers. By varying the dimensions of the nanopillars, the surface plasmon wavelength of the nanopillar Ag can be tuned from 650 to 690 nm. Adding layers of ITO to the structure further shifts the resonance wavelength toward the IR region and, depending on the sequence and thickness of the layers within the structure, we show that such structures can be applied in sensing devices including enhancing silicon as a photodetection material. PMID:28793489

Photoemission-based microelectronic devices

PubMed Central

Forati, Ebrahim; Dill, Tyler J.; Tao, Andrea R.; Sievenpiper, Dan

2016-01-01

The vast majority of modern microelectronic devices rely on carriers within semiconductors due to their integrability. Therefore, the performance of these devices is limited due to natural semiconductor properties such as band gap and electron velocity. Replacing the semiconductor channel in conventional microelectronic devices with a gas or vacuum channel may scale their speed, wavelength and power beyond what is available today. However, liberating electrons into gas/vacuum in a practical microelectronic device is quite challenging. It often requires heating, applying high voltages, or using lasers with short wavelengths or high powers. Here, we show that the interaction between an engineered resonant surface and a low-power infrared laser can cause enough photoemission via electron tunnelling to implement feasible microelectronic devices such as transistors, switches and modulators. The proposed photoemission-based devices benefit from the advantages of gas-plasma/vacuum electronic devices while preserving the integrability of semiconductor-based devices. PMID:27811946

Binding of two-electron metastable states in semiconductor quantum dots under a magnetic field

NASA Astrophysics Data System (ADS)

Garagiola, Mariano; Pont, Federico M.; Osenda, Omar

2018-04-01

Applying a strong enough magnetic field results in the binding of few-electron resonant states. The mechanism was proposed many years ago but its verification in laboratory conditions is far more recent. In this work we study the binding of two-electron resonant states. The electrons are confined in a cylindrical quantum dot which is embedded in a semiconductor wire. The geometry considered is similar to the one used in actual experimental setups. The low-energy two-electron spectrum is calculated numerically from an effective-mass approximation Hamiltonian modelling the system. Methods for binding threshold calculations in systems with one and two electrons are thoroughly studied; in particular, we use quantum information quantities to assess when the strong lateral confinement approximation can be used to obtain reliable low-energy spectra. For simplicity, only cases without bound states in the absence of an external field are considered. Under these conditions, the binding threshold for the one-electron case is given by the lowest Landau energy level. Moreover, the energy of the one-electron bounded resonance can be used to obtain the two-electron binding threshold. It is shown that for realistic values of the two-electron model parameters it is feasible to bind resonances with field strengths of a few tens of tesla.

UV sensing using film bulk acoustic resonators based on Au/n-ZnO/piezoelectric-ZnO/Al structure

PubMed Central

Bian, Xiaolei; Jin, Hao; Wang, Xiaozhi; Dong, Shurong; Chen, Guohao; Luo, J. K.; Deen, M. Jamal; Qi, Bensheng

2015-01-01

A new type of ultraviolet (UV) light sensor based on film bulk acoustic wave resonator (FBAR) is proposed. The new sensor uses gold and a thin n-type ZnO layer deposited on the top of piezoelectric layer of FBAR to form a Schottky barrier. The Schottky barrier's capacitance can be changed with UV light, resulting in an enhanced shift in the entire FBAR's resonant frequency. The fabricated UV sensor has a 50 nm thick n-ZnO semiconductor layer with a carrier concentration of ~ 1017 cm−3. A large frequency downshift is observed when UV light irradiates the FBAR. With 365 nm UV light of intensity 1.7 mW/cm2, the FBAR with n-ZnO/Au Schottky diode has 250 kHz frequency downshift, much larger than the 60 kHz frequency downshift in a conventional FBAR without the n-ZnO layer. The shift in the new FBAR's resonant frequency is due to the junction formed between Au and n-ZnO semiconductor and its properties changes with UV light. The experimental results are in agreement with the theoretical analysis using an equivalent circuit model of the new FBAR structure. PMID:25773146

1.05-GHz CMOS oscillator based on lateral- field-excited piezoelectric AlN contour- mode MEMS resonators.

PubMed

Zuo, Chengjie; Van der Spiegel, Jan; Piazza, Gianluca

2010-01-01

This paper reports on the first demonstration of a 1.05-GHz microelectromechanical (MEMS) oscillator based on lateral-field-excited (LFE) piezoelectric AlN contourmode resonators. The oscillator shows a phase noise level of -81 dBc/Hz at 1-kHz offset frequency and a phase noise floor of -146 dBc/Hz, which satisfies the global system for mobile communications (GSM) requirements for ultra-high frequency (UHF) local oscillators (LO). The circuit was fabricated in the AMI semiconductor (AMIS) 0.5-microm complementary metaloxide- semiconductor (CMOS) process, with the oscillator core consuming only 3.5 mW DC power. The device overall performance has the best figure-of-merit (FoM) when compared with other gigahertz oscillators that are based on film bulk acoustic resonator (FBAR), surface acoustic wave (SAW), and CMOS on-chip inductor and capacitor (CMOS LC) technologies. A simple 2-mask process was used to fabricate the LFE AlN resonators operating between 843 MHz and 1.64 GHz with simultaneously high Q (up to 2,200) and kt 2 (up to 1.2%). This process further relaxes manufacturing tolerances and improves yield. All these advantages make these devices suitable for post-CMOS integrated on-chip direct gigahertz frequency synthesis in reconfigurable multiband wireless communications.

Generation of auroral kilometric and Z mode radiation by the cyclotron maser mechanism

NASA Technical Reports Server (NTRS)

Omidi, N.; Gurnett, D. A.; Wu, C. S.

1984-01-01

The relativistic Doppler-shifted cyclotron resonance condition for EM wave interactions with a plasma defines an ellipse in velocity space when the product of the index of refraction and cosine of the wave normal angle is less than or equal to unity, and defines a partial ellipse when the product is greater than unity. It is also noted that waves with frequencies greater than the gyrofrequency can only resonate with particles moving in the same direction along the magnetic field, while waves with lower frequencies than these resonate with particles moving in both directions along the magnetic field. It is found, in the case of auroral kilometric radiation, that both the upgoing and the downgoing electrons are unstable and can give rise to this radiation's growth. The magnitudes of the growth rates for both the upgoing and downgoing auroral kilometric radiation are comparable, and indicate that the path lengths needed to account for the observed intensities of this radiation are of the order of a few hundred km, which is probably too large. Growth rate calculations for the Z mode radiation show that, for wave frequencies just below the gyrofrequency and wave normal angles at or near 90 deg, the electron distribution is unstable and the growth rates are large enough to account for the observed intensities.

Unstable Hadrons in Hot Hadron Gas in Laboratory and in the Early Universe

NASA Astrophysics Data System (ADS)

Kuznetsova, Inga; Rafelski, Johann

2011-04-01

We study kinetic master equations for reactions involving the formation and the natural decay of unstable particles in a thermal expanding hadronic gas in the laboratory and in the early Universe. We consider here for the first time the role of the decay channel of one (hadron resonance) into two daughter particles, and also by token of detailed balance the inverse process, fusion of two (thermal) particles into one. We obtain the thermal invariant reaction rate using as an input the free space (vacuum) decay time and show the medium quantum effects on π+π<->ρ reaction relaxation time. As another laboratory example we describe the K+K<->φ process in thermal expanding hadronic gas in heavy ions collisions. A particularly interesting application of our formalism is the 0̂<->γ+γ process in the early Universe. We also explore the fate of charged pions and the muon freeze-out in the Universe. Another interesting field of application of our formalism is the study of short lived hadronic resonances, which are in general not able to reach yield equilibrium. We study the evolution of hadron resonances in small drops of QGP and use the insight gained to generalize the dynamics to QED effects as well.

Nonlinear simulations of beam-driven Compressional Alfv´en Eigenmodes in NSTX

DOE PAGES

Belova, Elena V.; Gorelenkov, N. N.; Crocker, N. A.; ...

2017-03-10

We present results for the 3D nonlinear simulations of neutral-beam-driven compressional Alfv´en eigenmodes (CAEs) in the National Spherical Torus Experiment (NSTX). Hybrid MHD-particle simulations for the H-mode NSTX discharge (shot 141398) using the HYM code show unstable CAE modes for a range of toroidal mode numbers, n = 4 - 9, and frequencies below the ion cyclotron frequency. It is found that the essential feature of CAEs is their coupling to kinetic Alfv´en wave (KAW) that occurs on the high-field side at the Alfv´en resonance location. We frequently observe high-frequency Alfv´en eigenmodes in beam-heated NSTX plasmas, and have been linkedmore » to flattening of the electron temperature profiles at high beam power. Coupling between CAE and KAW suggests an energy channeling mechanism to explain these observations, in which beam driven CAEs dissipate their energy at the resonance location, therefore significantly modifying the energy deposition profile. Nonlinear simulations demonstrate that CAEs can channel the energy of the beam ions from the injection region near the magnetic axis to the location of the resonant mode conversion at the edge of the beam density profile. Furthermore, a set of nonlinear simulations show that the CAE instability saturates due to nonlinear particle trapping, and a large fraction of beam energy can be transferred to several unstable CAEs of relatively large amplitudes and absorbed at the resonant location. Absorption rate shows a strong scaling with the beam power.« less

Nonlinear simulations of beam-driven Compressional Alfv´en Eigenmodes in NSTX

DOE Office of Scientific and Technical Information (OSTI.GOV)

Belova, Elena V.; Gorelenkov, N. N.; Crocker, N. A.

We present results for the 3D nonlinear simulations of neutral-beam-driven compressional Alfv´en eigenmodes (CAEs) in the National Spherical Torus Experiment (NSTX). Hybrid MHD-particle simulations for the H-mode NSTX discharge (shot 141398) using the HYM code show unstable CAE modes for a range of toroidal mode numbers, n = 4 - 9, and frequencies below the ion cyclotron frequency. It is found that the essential feature of CAEs is their coupling to kinetic Alfv´en wave (KAW) that occurs on the high-field side at the Alfv´en resonance location. We frequently observe high-frequency Alfv´en eigenmodes in beam-heated NSTX plasmas, and have been linkedmore » to flattening of the electron temperature profiles at high beam power. Coupling between CAE and KAW suggests an energy channeling mechanism to explain these observations, in which beam driven CAEs dissipate their energy at the resonance location, therefore significantly modifying the energy deposition profile. Nonlinear simulations demonstrate that CAEs can channel the energy of the beam ions from the injection region near the magnetic axis to the location of the resonant mode conversion at the edge of the beam density profile. Furthermore, a set of nonlinear simulations show that the CAE instability saturates due to nonlinear particle trapping, and a large fraction of beam energy can be transferred to several unstable CAEs of relatively large amplitudes and absorbed at the resonant location. Absorption rate shows a strong scaling with the beam power.« less

Stable room-temperature thallium bromide semiconductor radiation detectors

NASA Astrophysics Data System (ADS)

Datta, A.; Fiala, J.; Becla, P.; Motakef, Shariar

2017-10-01

Thallium bromide (TlBr) is a highly efficient ionic semiconductor with excellent radiation detection properties. However, at room temperature, TlBr devices polarize under an applied electric field. This phenomenon not only degrades the charge collection efficiency of the detectors but also promotes chemical reaction of the metal electrodes with bromine, resulting in an unstable electric field and premature failure of the device. This drawback has been crippling the TlBr semiconductor radiation detector technology over the past few decades. In this exhaustive study, this polarization phenomenon has been counteracted using innovative bias polarity switching schemes. Here the highly mobile Br- species, with an estimated electro-diffusion velocity of 10-8 cm/s, face opposing electro-migration forces during every polarity switch. This minimizes the device polarization and availability of Br- ions near the metal electrode. Our results indicate that it is possible to achieve longer device lifetimes spanning more than 17 000 h (five years of 8 × 7 operation) for planar and pixelated radiation detectors using this technique. On the other hand, at constant bias, 2500 h is the longest reported lifetime with most devices less than 1000 h. After testing several biasing switching schemes, it is concluded that the critical bias switching frequency at an applied bias of 1000 V/cm is about 17 μHz. Using this groundbreaking result, it will now be possible to deploy this highly efficient room temperature semiconductor material for field applications in homeland security, medical imaging, and physics research.

Microscopic Modeling of Intersubband Optical Processes in Type II Semiconductor Quantum Wells: Linear Absorption

NASA Technical Reports Server (NTRS)

Li, Jian-Zhong; Kolokolov, Kanstantin I.; Ning, Cun-Zheng

2003-01-01

Linear absorption spectra arising from intersubband transitions in semiconductor quantum well heterostructures are analyzed using quantum kinetic theory by treating correlations to the first order within Hartree-Fock approximation. The resulting intersubband semiconductor Bloch equations take into account extrinsic dephasing contributions, carrier-longitudinal optical phonon interaction and carrier-interface roughness interaction which is considered with Ando s theory. As input for resonance lineshape calculation, a spurious-states-free 8-band kp Hamiltonian is used, in conjunction with the envelop function approximation, to compute self-consistently the energy subband structure of electrons in type II InAs/AlSb single quantum well structures. We demonstrate the interplay of nonparabolicity and many-body effects in the mid-infrared frequency range for such heterostructures.

Optical activity in chiral stacks of 2D semiconductors

NASA Astrophysics Data System (ADS)

Poshakinskiy, Alexander V.; Kazanov, Dmitrii R.; Shubina, Tatiana V.; Tarasenko, Sergey A.

2018-03-01

We show that the stacks of two-dimensional semiconductor crystals with the chiral packing exhibit optical activity and circular dichroism. We develop a microscopic theory of these phenomena in the spectral range of exciton transitions that takes into account the spin-dependent hopping of excitons between the layers in the stack and the interlayer coupling of excitons via electromagnetic field. For the stacks of realistic two-dimensional semiconductors such as transition metal dichalcogenides, we calculate the rotation and ellipticity angles of radiation transmitted through such structures. The angles are resonantly enhanced at the frequencies of both bright and dark exciton modes in the stack. We also study the photoluminescence of chiral stacks and show that it is circularly polarized.

Spatial solitons in a semiconductor microresonator

NASA Astrophysics Data System (ADS)

Taranenko, V. B.; Ganne, I.; Kuszelewicz, R.; Weiss, C. O.

We show experimentally the existence of bright and dark spatial solitons in a passive quantum-well-semi-conductor resonator of large Fresnel number with mixed absorptive defocusing nonlinearity. Several of the solitons can exist simultaneously as required for applications.

Modeling of Millimeter-Wave Modulation Characteristics of Semiconductor Lasers under Strong Optical Feedback

PubMed Central

Bakry, Ahmed

2014-01-01

This paper presents modeling and simulation on the characteristics of semiconductor laser modulated within a strong optical feedback (OFB-)induced photon-photon resonance over a passband of millimeter (mm) frequencies. Continuous wave (CW) operation of the laser under strong OFB is required to achieve the photon-photon resonance in the mm-wave band. The simulated time-domain characteristics of modulation include the waveforms of the intensity and frequency chirp as well as the associated distortions of the modulated mm-wave signal. The frequency domain characteristics include the intensity modulation (IM) and frequency modulation (FM) responses in addition to the associated relative intensity noise (RIN). The signal characteristics under modulations with both single and two mm-frequencies are considered. The harmonic distortion and the third order intermodulation distortion (IMD3) are examined and the spurious free dynamic range (SFDR) is calculated. PMID:25383381

Raman spectroscopy of magneto-phonon resonances in graphene and graphite

NASA Astrophysics Data System (ADS)

Goler, Sarah; Yan, Jun; Pellegrini, Vittorio; Pinczuk, Aron

2012-08-01

The magneto-phonon resonance or MPR occurs in semiconductor materials when the energy spacing between Landau levels is continuously tuned to cross the energy of an optical phonon mode. MPRs have been largely explored in bulk semiconductors, in two-dimensional systems and in quantum dots. Recently there has been significant interest in the MPR interactions of the Dirac fermion magneto-excitons in graphene, and a rich splitting and anti-crossing phenomena of the even parity E2g long wavelength optical phonon mode have been theoretically proposed and experimentally observed. The MPR has been found to crucially depend on disorder in the graphene layer. This is a feature that creates new venues for the study of interplays between disorder and interactions in the atomic layers. We review here the fundamentals of MRP in graphene and the experimental Raman scattering works that have led to the observation of these phenomena in graphene and graphite.

Valley-Selective Exciton Bistability in a Suspended Monolayer Semiconductor.

PubMed

Xie, Hongchao; Jiang, Shengwei; Shan, Jie; Mak, Kin Fai

2018-05-09

We demonstrate robust optical bistability, the phenomenon of two well-discriminated stable states depending upon the history of the optical input, in fully suspended monolayers of WSe 2 at low temperatures near the exciton resonance. Optical bistability has been achieved under continuous-wave optical excitation that is red-detuned from the exciton resonance at an intensity level of 10 3 W/cm 2 . The observed bistability is originated from a photothermal mechanism, which provides both optical nonlinearity and passive feedback, two essential elements for optical bistability. The low thermal conductance of suspended samples is primarily responsible for the low excitation intensities required for optical bistability. Under a finite out-of-plane magnetic field, the exciton bistability becomes helicity dependent due to the exciton valley Zeeman effect, which enables repeatable switching of the sample reflectance by light polarization. Our study has opened up exciting opportunities in controlling light with light, including its wavelength, power, and polarization, using monolayer semiconductors.

Compositeness of hadron resonances in finite volume

NASA Astrophysics Data System (ADS)

Tsuchida, Yujiro; Hyodo, Tetsuo

2018-05-01

We develop a theoretical framework to quantify the structure of unstable hadron resonances. With the help of the corresponding system in a finite volume, we define the compositeness of resonance states which can be interpreted as a probability. This framework is used to study the structure of the scalar mesons f0(980 ) and a0(980 ) . In both mesons, the K ¯K component dominates about a half of the wave function. The method is also applied to the Λ (1405 ) resonance. We argue that a single energy level in finite volume represents the two eigenstates in infinite volume. The K ¯N component of Λ (1405 ) , including contributions from both eigenstates, is found to be 58%, and the rest is composed of the π Σ and other channels.

Plasmonic doped semiconductor nanocrystals: Properties, fabrication, applications and perspectives

NASA Astrophysics Data System (ADS)

Kriegel, Ilka; Scotognella, Francesco; Manna, Liberato

2017-02-01

Degenerately doped semiconductor nanocrystals (NCs) are of recent interest to the NC community due to their tunable localized surface plasmon resonances (LSPRs) in the near infrared (NIR). The high level of doping in such materials with carrier densities in the range of 1021cm-3 leads to degeneracy of the doping levels and intense plasmonic absorption in the NIR. The lower carrier density in degenerately doped semiconductor NCs compared to noble metals enables LSPR tuning over a wide spectral range, since even a minor change of the carrier density strongly affects the spectral position of the LSPR. Two classes of degenerate semiconductors are most relevant in this respect: impurity doped semiconductors, such as metal oxides, and vacancy doped semiconductors, such as copper chalcogenides. In the latter it is the density of copper vacancies that controls the carrier concentration, while in the former the introduction of impurity atoms adds carriers to the system. LSPR tuning in vacancy doped semiconductor NCs such as copper chalcogenides occurs by chemically controlling the copper vacancy density. This goes in hand with complex structural modifications of the copper chalcogenide crystal lattice. In contrast the LSPR of degenerately doped metal oxide NCs is modified by varying the doping concentration or by the choice of host and dopant atoms, but also through the addition of capacitive charge carriers to the conduction band of the metal oxide upon post-synthetic treatments, such as by electrochemical- or photodoping. The NIR LSPRs and the option of their spectral fine-tuning make accessible important new features, such as the controlled coupling of the LSPR to other physical signatures or the enhancement of optical signals in the NIR, sensing application by LSPR tracking, energy production from the NIR plasmon resonance or bio-medical applications in the biological window. In this review we highlight the recent advances in the synthesis of various different plasmonic semiconductor NCs with LSPRs covering the entire spectral range, from the mid- to the NIR. We focus on copper chalcogenide NCs and impurity doped metal oxide NCs as the most investigated alternatives to noble metals. We shed light on the structural changes upon LSPR tuning in vacancy doped copper chalcogenide NCs and deliver a picture for the fundamentally different mechanism of LSPR modification of impurity doped metal oxide NCs. We review on the peculiar optical properties of plasmonic degenerately doped NCs by highlighting the variety of different optical measurements and optical modeling approaches. These findings are merged in an exhaustive section on new and exciting applications based on the special characteristics that plasmonic semiconductor NCs bring along.

Influence of thermal deformation in cavity mirrors on beam propagation characteristics of high-power slab lasers

NASA Astrophysics Data System (ADS)

Wang, Zhen; Xiao, Longsheng; Wang, Wei; Wu, Chao; Tang, Xiahui

2018-01-01

Owing to their good diffusion cooling and low sensitivity to misalignment, slab-shape negative-branch unstable-waveguide resonators are widely used for high-power lasers in industry. As the output beam of the resonator is astigmatic, an external beam shaping system is required. However, the transverse dimension of the cavity mirrors in the resonator is large. For a long-time operation, the heating of cavity mirrors can be non-uniform. This results in micro-deformation and a change in the radius of curvature of the cavity mirrors, and leads to an output beam of an offset optical axis of the resonator. It was found that a change in the radius of curvature of 0.1% (1 mm) caused by thermal deformation generates a transverse displacement of 1.65 mm at the spatial filter of the external beam shaping system, and an output power loss of more than 80%. This can potentially burn out the spatial filter. In order to analyze the effect of the offset optical axis of the beam on the external optical path, we analyzed the transverse displacement and rotational misalignments of the spatial filter. For instance, if the transverse displacement was 0.3 mm, the loss in the output power was 9.6% and a sidelobe appeared in the unstable direction. If the angle of rotation was 5°, the loss in the output power was 2%, and the poles were in the direction of the waveguide. Based on these results, by adjusting the bending mirror, the deviation angle of the output beam of the resonator cavity was corrected, in order to obtain maximum output power and optimal beam quality. Finally, the propagation characteristics of the corrected output beam were analyzed.

Hyperfine Interactions in the Electron Paramagnetic Resonance Spectra of Point Defects in Wide-Band-Gap Semiconductors

DTIC Science & Technology

2014-09-18

compensation) during growth due to their preferred trivalent charge states. The electron paramagnetic resonance spectrum of the singly ionized chromium ...neutral nitrogen acceptor in ZnO . . . . . . . . . . . . . . . . . . 45 16 Spectrum of the singly ionized chromium acceptor in TiO2 . . . . . . . . . 49...is a single crystal of magnesium oxide that has been doped with chromium . Chromium Cr3+ substitutes for magnesium Mg2+ and creates a paramagnetic

Structural and Electrical-Optical Characterizations of Semiconductor-Atomic Superlattice

DTIC Science & Technology

2007-05-01

and Avalanche diodes certainly fall into this category. Resonant tunneling diodes like Esaki Tunnel diodes are NDC devices belong to a class where...Heterostructures, Eds. M. Dutta and M. Stroscio, (World Sci. 2003, Singapore), p221 177 Cooling by Inverse Nottingham Effect with Resonant Tunneling ...controlled emitter, V. Semet, V.T. Binh, J.Zhang, J.Yang, M.A. Khan, and R. Tsu, APL. 84,1937 (2004) 186 Stability Issues in Tunneling via Quantum

Semiconductor Based Transverse Bragg Resonance (TBR) Optical Amplifiers and Lasers

DTIC Science & Technology

2007-02-14

modes with small modal angles experience zero or very low radiation loss. We call these modes small modal angle (SMA) modes. SMA modes include both...lossless effective index-guided modes and low loss leaky modes. They are almost parallel to the graing and do not radiate significantly. As the modal...angle increases, all the modes experience higher radiation loss. However, around the transverse resonance angle of 13.80, low loss modes exist. These

Self-sustained magnetoelectric oscillations in magnetic resonant tunneling structures.

PubMed

Ertler, Christian; Fabian, Jaroslav

2008-08-15

The dynamic interplay of transport, electrostatic, and magnetic effects in the resonant tunneling through ferromagnetic quantum wells is theoretically investigated. It is shown that the carrier-mediated magnetic order in the ferromagnetic region not only induces, but also takes part in intrinsic, robust, and sustainable high-frequency current oscillations over a large window of nominally steady bias voltages. This phenomenon could spawn a new class of quantum electronic devices based on ferromagnetic semiconductors.

Coherent vs Incoherent Emission from Semiconductor Structures after Resonant Femtosecond Excitation

NASA Astrophysics Data System (ADS)

Gurioli, Massimo; Bogani, Franco; Ceccherini, Simone; Colocci, Marcello

1997-04-01

We show that an interferometric correlation measurement with fs time resolution provides an unambiguous discrimination between coherent and incoherent emission after resonant femtosecond excitation. The experiment directly probes the most important difference between the two emissions, that is, the phase correlation with the excitation pulse. The comparison with cw frequency resolved measurements demonstrates that the relationship between coherent and incoherent emission is similar under femtosecond and steady-state excitation.

Superabsorbing, Artificial Metal Films Constructed from Semiconductor Nanoantennas.

PubMed

Kim, Soo Jin; Park, Junghyun; Esfandyarpour, Majid; Pecora, Emanuele F; Kik, Pieter G; Brongersma, Mark L

2016-06-08

In 1934, Wilhelm Woltersdorff demonstrated that the absorption of light in an ultrathin, freestanding film is fundamentally limited to 50%. He concluded that reaching this limit would require a film with a real-valued sheet resistance that is exactly equal to R = η/2 ≈ 188.5Ω/□, where [Formula: see text] is the impedance of free space. This condition can be closely approximated over a wide frequency range in metals that feature a large imaginary relative permittivity εr″, that is, a real-valued conductivity σ = ε0εr″ω. A thin, continuous sheet of semiconductor material does not facilitate such strong absorption as its complex-valued permittivity with both large real and imaginary components preclude effective impedance matching. In this work, we show how a semiconductor metafilm constructed from optically resonant semiconductor nanostructures can be created whose optical response mimics that of a metallic sheet. For this reason, the fundamental absorption limit mentioned above can also be reached with semiconductor materials, opening up new opportunities for the design of ultrathin optoelectronic and light harvesting devices.

The preparation method of terahertz monolithic integrated device

NASA Astrophysics Data System (ADS)

Zhang, Cong; Su, Bo; He, Jingsuo; Zhang, Hongfei; Wu, Yaxiong; Zhang, Shengbo; Zhang, Cunlin

2018-01-01

The terahertz monolithic integrated device is to integrate the pumping area of the terahertz generation, the detection area of the terahertz receiving and the metal waveguide of terahertz transmission on the same substrate. The terahertz generation and detection device use a photoconductive antenna structure the metal waveguide use a microstrip line structure. The evanescent terahertz-bandwidth electric field extending above the terahertz transmission line interacts with, and is modified by, overlaid dielectric samples, thus enabling the characteristic vibrational absorption resonances in the sample to be probed. In this device structure, since the semiconductor substrate of the photoconductive antenna is located between the strip conductor and the dielectric layer of the microstrip line, and the semiconductor substrate cannot grow on the dielectric layer directly. So how to prepare the semiconductor substrate of the photoconductive antenna and how to bond the semiconductor substrate to the dielectric layer of the microstrip line is a key step in the terahertz monolithic integrated device. In order to solve this critical problem, the epitaxial wafer structure of the two semiconductor substrates is given and transferred to the desired substrate by two methods, respectively.

Comparative Study of HfTa-based gate-dielectric Ge metal-oxide-semiconductor capacitors with and without AlON interlayer

NASA Astrophysics Data System (ADS)

Xu, J. P.; Zhang, X. F.; Li, C. X.; Chan, C. L.; Lai, P. T.

2010-04-01

The electrical properties and high-field reliability of HfTa-based gate-dielectric metal-oxide-semiconductor (MOS) devices with and without AlON interlayer on Ge substrate are investigated. Experimental results show that the MOS capacitor with HfTaON/AlON stack gate dielectric exhibits low interface-state/oxide-charge densities, low gate leakage, small capacitance equivalent thickness (˜1.1 nm), and high dielectric constant (˜20). All of these should be attributed to the blocking role of the ultrathin AlON interlayer against interdiffusions of Ge, Hf, and Ta and penetration of O into the Ge substrate, with the latter effectively suppressing the unintentional formation of unstable poor-quality low- k GeO x and giving a superior AlON/Ge interface. Moreover, incorporation of N into both the interlayer and high- k dielectric further improves the device reliability under high-field stress through the formation of strong N-related bonds.

Passivation of oxide traps and interface states in GaAs metal-oxide-semiconductor capacitor by LaTaON passivation layer and fluorine incorporation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, L. N.; Choi, H. W.; Lai, P. T., E-mail: laip@eee.hku.hk

2015-11-23

GaAs metal-oxide-semiconductor capacitor with TaYON/LaTaON gate-oxide stack and fluorine-plasma treatment is fabricated and compared with its counterparts without the LaTaON passivation interlayer or the fluorine treatment. Experimental results show that the sample exhibits better characteristics: low interface-state density (8 × 10{sup 11 }cm{sup −2}/eV), small flatband voltage (0.69 V), good capacitance-voltage behavior, small frequency dispersion, and small gate leakage current (6.35 × 10{sup −6} A/cm{sup 2} at V{sub fb} + 1 V). These should be attributed to the suppressed growth of unstable Ga and As oxides on the GaAs surface during gate-oxide annealing by the LaTaON interlayer and fluorine incorporation, and the passivating effects of fluorine atoms on the acceptor-likemore » interface and near-interface traps.« less

Quantized conductance doubling and hard gap in a two-dimensional semiconductor–superconductor heterostructure

PubMed Central

Kjaergaard, M.; Nichele, F.; Suominen, H. J.; Nowak, M. P.; Wimmer, M.; Akhmerov, A. R.; Folk, J. A.; Flensberg, K.; Shabani, J.; Palmstrøm, C. J.; Marcus, C. M.

2016-01-01

Coupling a two-dimensional (2D) semiconductor heterostructure to a superconductor opens new research and technology opportunities, including fundamental problems in mesoscopic superconductivity, scalable superconducting electronics, and new topological states of matter. One route towards topological matter is by coupling a 2D electron gas with strong spin–orbit interaction to an s-wave superconductor. Previous efforts along these lines have been adversely affected by interface disorder and unstable gating. Here we show measurements on a gateable InGaAs/InAs 2DEG with patterned epitaxial Al, yielding devices with atomically pristine interfaces between semiconductor and superconductor. Using surface gates to form a quantum point contact (QPC), we find a hard superconducting gap in the tunnelling regime. When the QPC is in the open regime, we observe a first conductance plateau at 4e2/h, consistent with theory. The hard-gap semiconductor–superconductor system demonstrated here is amenable to top-down processing and provides a new avenue towards low-dissipation electronics and topological quantum systems. PMID:27682268

The role of invariant manifolds in lowthrust trajectory design (part III)

NASA Technical Reports Server (NTRS)

Lo, Martin W.; Anderson, Rodney L.; Lam, Try; Whiffen, Greg

2006-01-01

This paper is the third in a series to explore the role of invariant manifolds in the design of low thrust trajectories. In previous papers, we analyzed an impulsive thrust resonant gravity assist flyby trajectory to capture into Europa orbit using the invariant manifolds of unstable resonant periodic orbits and libration orbits. The energy savings provided by the gravity assist may be interpreted dynamically as the result of a finite number of intersecting invariant manifolds. In this paper we demonstrate that the same dynamics is at work for low thrust trajectories with resonant flybys and low energy capture. However, in this case, the flybys and capture are effected by continuous families of intersecting invariant manifolds.

Resonant Frequency Shifts of a Fluid Filled Cavity Caused by a Bubble

NASA Astrophysics Data System (ADS)

Zhang, Hailan; Wang, Xiuming; Chen, Dehua; Che, Chengxuan

2009-03-01

In the previous studies for estimating acoustic wave velocities and attenuations of a rock specimen in a low frequency range using an acoustic resonance spectroscopy method, it was found that bubbles in a fluid filled cavity reduce the resonant frequency of the cavity significantly, which makes the measurement unstable. In this paper, this phenomenon is explained by using a simple model of a spherical fluid filled cavity with a single air bubble. It is pointed out that air bubble effects are caused by the vibration of the bubble coupled with the vibration of the cavity and, therefore, the measurement must be carefully prepared to prevent any air bubbles from entering the cavity.

Analysis of signal to noise enhancement using a highly selective modulation tracking filter

NASA Technical Reports Server (NTRS)

Haden, C. R.; Alworth, C. W.

1972-01-01

Experiments are reported which utilize photodielectric effects in semiconductor loaded superconducting resonant circuits for suppressing noise in RF communication systems. The superconducting tunable cavity acts as a narrow band tracking filter for detecting conventional RF signals. Analytical techniques were developed which lead to prediction of signal-to-noise improvements. Progress is reported in optimization of the experimental variables. These include improved Q, new semiconductors, improved optics, and simplification of the electronics. Information bearing signals were passed through the system, and noise was introduced into the computer model.

Semiconductor technology program. Progress briefs

NASA Technical Reports Server (NTRS)

Bullis, W. M. (Editor)

1979-01-01

The current status of NBS work on measurement technology for semiconductor materials, process control, and devices is reported. Results of both in-house and contract research are covered. Highlighted activities include modeling of diffusion processes, analysis of model spreading resistance data, and studies of resonance ionization spectroscopy, resistivity-dopant density relationships in p-type silicon, deep level measurements, photoresist sensitometry, random fault measurements, power MOSFET thermal characteristics, power transistor switching characteristics, and gross leak testing. New and selected on-going projects are described. Compilations of recent publications and publications in press are included.

Quench-induced Floquet topological p-wave superfluids.

PubMed

Foster, Matthew S; Gurarie, Victor; Dzero, Maxim; Yuzbashyan, Emil A

2014-08-15

Ultracold atomic gases in two dimensions tuned close to a p-wave Feshbach resonance were expected to exhibit topological superfluidity, but these were found to be experimentally unstable. We show that one can induce a topological Floquet superfluid if weakly interacting atoms are brought suddenly close ("quenched") to such a resonance, in the time before the instability kicks in. The resulting superfluid possesses Majorana edge modes, yet differs from a conventional Floquet system as it is not driven externally. Instead, the periodic modulation is self-generated by the dynamics.

Exploration of the Townsend regime by discharge light emission in a gas discharge device

NASA Astrophysics Data System (ADS)

Hilal Yucel, Kurt

2014-01-01

The Townsend discharge mechanism has been explored in a planar microelectronic gas discharge device (MGDD) with different applied voltages U and interelectrode distance d under various pressures in air. The anode and the cathode of the MGDD are formed by a transparent SnO2 covered glass and a GaAs semiconductor, respectively. In the experiments, the discharge is found to be unstable just below the breakdown voltage Ub, whereas the discharge passes through a homogeneous stable Townsend mode beyond the breakdown voltage. The measurements are made by an electrical circuit and a CCD camera by recording the currents and light emission (LE) intensities. The intensity profiles, which are converted from the 3D light emission images along the semiconductor diameter, have been analysed for different system parameters. Different instantaneous conductivity σt regimes are found below and beyond the Townsend region. These regimes govern the current and spatio-temporal LE stabilities in the plasma system. It has been proven that the stable LE region increases up to 550 Torr as a function of pressure for small d. If the active area of the semiconductor becomes larger and the interlectrode distance d becomes smaller, the stable LE region stays nearly constant with pressure.

Spin Dynamics in Novel Materials Systems

NASA Astrophysics Data System (ADS)

Yu, Howard

Spintronics and organic electronics are fields that have made considerable advances in recent years, both in fundamental research and in applications. Organic materials have a number of attractive properties that enable them to complement applications traditionally fulfilled by inorganic materials, while spintronics seeks to take advantage of the spin degree of freedom to produce new applications. My research is aimed at combining these two fields to develop organic materials for spintronics use. My thesis is divided into three primary projects centered around an organic-based semiconducting ferrimagnet, vanadium tetracyanoethylene. First, we investigated the transport characteristics of a hybrid organic-inorganic heterostructure. Semiconductors form the basis of the electronics industry, and there has been considerable effort put forward to develop organic semiconductors for applications like organic light-emitting diodes and organic thin film transistors. Working with hybrid organic-inorganic semiconductor device structures allows us to potentially take advantage of the infrastructure that has already been developed for silicon and other inorganic semiconductors. This could potentially pave the way for a new class of active hybrid devices with multifunctional behavior. Second, we investigated the magnetic resonance characteristics of V[TCNE]x, in multiple measurement schemes and exploring the effect of temperature, frequency, and chemical tuning. Recently, the spintronics community has shifted focus from static electrical spin injection to various dynamic processes, such as spin pumping and thermal effects. Spin pumping in particular is an intriguing way to generate pure spin currents via magnetic resonance that has attracted a high degree of interest, with the FMR linewidth being an important metric for spin injection. Furthermore, we can potentially use these measurements to probe the magnetic properties as we change the physical properties of the materials by chemically tuning the organic ligand. We are therefore interested in exploring the resonance properties of this materials system to lay the groundwork for future spin pumping applications. Third, we have made preliminary measurements of spin pumping in hybrid and all-organic bilayer structures. As mentioned above, FMR-driven spin pumping is method for generating pure spin currents with no associated charge motion. This can be detected in a number of ways, one of which is monitoring the FMR characteristics of two ferromagnets in close contact, where spins injected from one magnet into the other changes the linewidth. In conjunction with the magnetic resonance measurements, we have started to investigate the FMR properties of these bilayer systems.

Micro ring cavity resonator incorporating total internal reflection mirrors

NASA Astrophysics Data System (ADS)

Kim, Doo Gun; Choi, Woon Kyung; Choi, Young Wan; Yi, Jong Chang; Chung, Youngchul; Dagli, Nadir

2007-02-01

We investigate the properties of a multimode-interference (MMI) coupled micro ring cavity resonator with total-internal-reflection (TIR) mirrors and a semiconductor optical amplifier (SOA). The TIR mirrors were fabricated by the self-aligned process with a loss of 0.7 dB per mirror. The length and width of an MMI are 142 μm and 10 μm, respectively. The resulting free spectral range (FSR) of the resonator was approximately 1.698 nm near 1571 nm and the extinction ratio was about 17 dB. These devices might be useful as optical switching and add-drop filters in a photonic integrated circuit or as small and fast resonator devices.

Wavelength-selective mid-infrared metamaterial absorbers with multiple tungsten cross resonators.

PubMed

Li, Zhigang; Stan, Liliana; Czaplewski, David A; Yang, Xiaodong; Gao, Jie

2018-03-05

Wavelength-selective metamaterial absorbers in the mid-infrared range are demonstrated by using multiple tungsten cross resonators. By adjusting the geometrical parameters of cross resonators in single-sized unit cells, near-perfect absorption with single absorption peak tunable from 3.5 µm to 5.5 µm is realized. The combination of two, three, or four cross resonators of different sizes in one unit cell enables broadband near-perfect absorption at mid-infrared range. The obtained absorption spectra exhibit omnidirectionality and weak dependence on incident polarization. The underlying mechanism of near-perfect absorption with cross resonators is further explained by the optical mode analysis, dispersion relation and equivalent RLC circuit model. Moreover, thermal analysis is performed to study the heat generation and temperature increase in the cross resonator absorbers, while the energy conversion efficiency is calculated for the thermophotovoltaic system made of the cross resonator thermal emitters and low-bandgap semiconductors.

Tailoring the negative-refractive-index metamaterials composed of semiconductor-metal-semiconductor gold ring/disk cavity heptamers to support strong Fano resonances in the visible spectrum.

PubMed

Ahmadivand, Arash; Pala, Nezih

2015-02-01

In this study, we investigated numerically the plasmon response of a planar negative-index metamaterial composed of symmetric molecular orientations of Au ring/disk nanocavities in a heptamer cluster. Using the plasmon hybridization theory and considering the optical response of an individual nanocluster, we determined the accurate geometrical sizes for a ring/disk nanocavity heptamer. It is shown that the proposed well-organized nanocluster can be tailored to support strong and sharp Fano resonances in the visible spectrum. Surrounding and filling the heptamer clusters by various metasurfaces with different chemical characteristics, and illuminating the structure with an incident light source, we proved that this configuration reflects low losses and isotropic features, including a pronounced Fano dip in the visible spectrum. Technically, employing numerical methods and tuning the geometrical sizes of the structure, we tuned and induced the Fano dip in the visible range, while the dark and bright plasmon resonance extremes are blueshifted to shorter wavelengths dramatically. Considering the calculated transmission window, we quantified the effective refractive index for the structure, while the substance of the substrate material was varied. Using Si, GaP, and InP semiconductors as substrate materials, we calculated and compared the corresponding figure of merit (FOM) for different regimes. The highest possible FOM was obtained for the GaP-Au-GaP negative-refractive-index metamaterial composed of ring/disk nanocavity heptamers as 62.4 at λ∼690  nm (arounnd the position of the Fano dip). Despite the outstanding symmetric nature of the suggested heptamer array, we provided sharp Fano dips by the appropriate tuning of the geometrical and chemical parameters. This study yields a method to employ ring/disk nanocavity heptamers as a negative-refractive-index metamaterial in designing highly accurate localization of surface plasmon resonance sensing devices and biochemical sensors.

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots.

PubMed

Baranov, Pavel G; Orlinskii, Sergei B; de Mello Donegá, Celso; Schmidt, Jan

2010-10-01

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the (67)Zn nuclear spins and by the hyperfine interaction of the (7)Li, (23)Na and (27)Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)(2) capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the (67)Zn nuclear spins in the core of ZnO QDs and of the (1)H nuclear spins in the Zn(OH)(2) capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques.

High-Frequency EPR and ENDOR Spectroscopy on Semiconductor Quantum Dots

PubMed Central

Baranov, Pavel G.; de Mello Donegá, Celso; Schmidt, Jan

2010-01-01

It is shown that high-frequency electron paramagnetic resonance (EPR) and electron-nuclear double resonance (ENDOR) spectroscopy are excellent tools for the investigation of the electronic properties of semiconductor quantum dots (QDs). The great attractions of these techniques are that, in contrast to optical methods, they allow the identification of the dopants and provide information about the spatial distribution of the electronic wave function. This latter aspect is particularly attractive because it allows for a quantitative measurement of the effect of confinement on the shape and properties of the wave function. In this contribution EPR and ENDOR results are presented on doped ZnO QDs. Shallow donors (SDs), related to interstitial Li and Na and substitutional Al atoms, have been identified in this material by pulsed high-frequency EPR and ENDOR spectroscopy. The shallow character of the wave function of the donors is evidenced by the multitude of ENDOR transitions of the 67Zn nuclear spins and by the hyperfine interaction of the 7Li, 23Na and 27Al nuclear spins that are much smaller than for atomic lithium, sodium and aluminium. The EPR signal of an exchange-coupled pair consisting of a shallow donor and a deep Na-related acceptor has been identified in ZnO nanocrystals with radii smaller than 1.5 nm. From ENDOR experiments it is concluded that the deep Na-related acceptor is located at the interface of the ZnO core and the Zn(OH)2 capping layer, while the shallow donor is in the ZnO core. The spatial distribution of the electronic wave function of a shallow donor in ZnO semiconductor QDs has been determined in the regime of quantum confinement by using the nuclear spins as probes. Hyperfine interactions as monitored by ENDOR spectroscopy quantitatively reveal the transition from semiconductor to molecular properties upon reduction of the size of the nanoparticles. In addition, the effect of confinement on the g-factor of SDs in ZnO as well as in CdS QDs is observed. Finally, it is shown that an almost complete dynamic nuclear polarization (DNP) of the 67Zn nuclear spins in the core of ZnO QDs and of the 1H nuclear spins in the Zn(OH)2 capping layer can be obtained. This DNP is achieved by saturating the EPR transition of SDs present in the QDs with resonant high-frequency microwaves at low temperatures. This nuclear polarization manifests itself as a hole and an antihole in the EPR absorption line of the SD in the QDs and a shift of the hole (antihole). The enhancement of the nuclear polarization opens the possibility to study semiconductor nanostructures with nuclear magnetic resonance techniques. PMID:20936163

Numerical Simulation of Adaptive Control Applicaton to Unstable Solid Rocket Motors

DTIC Science & Technology

2001-06-01

la Technologie des Lanceurs "Vi- Sciences Meeting & Exhibit, Reno, Jan. 15-18. bration des Lanceurs , Toulouse", 1999. AIAA Paper 96-0759, 1996. 7-8...Schmidt. Some recent de- in the presence of pipeline acoustic resonance. velopments in numerical methods for transonic J. Fluids and Structures ., 5:207

Polarization independent asymmetric light absorption in plasmonic nanostructure

NASA Astrophysics Data System (ADS)

Franco Rêgo, Davi; Rodriguez-Esquerre, Vitaly Felix

2017-08-01

The directional dependency of the optical coefficients, such as absorbance and reflectance, of a periodic hole plasmonic structure is numerically simulated and investigated. The tridimensional structure, which is composed of a metallic thin layer on a semiconductor matrix, is polarization independent and exhibits wide angle tolerance. It is found that the optical coefficients of the simulated structure have strong dependency to the radii of the holes due to cavity modes resonance and surface plasmon resonance. Simulations were carried out using gold and silver, varying the holes radii ranging from 40 to 70nm, as well as its depth, from 30 to 60nm of the metallic thin layer and from 100 to 200nm of the semiconductor matrix. A maximum contrast ratio of a unit was obtained. The resonant modes excited in the structure and excitation of surface plasmon polaritons in the metallic side illumination favors absorption, which explains the asymmetric behavior. We also investigate the structure's fabrication sensitivity by randomizing the generation of center of the holes in a supercell. These findings are significant for a diverse range of applications, ranging from optical integrated circuits to solar and thermovoltaics energy harvesting.

Terahertz Modulator based on Metamaterials integrated with Metal-Semiconductor-Metal Varactors

PubMed Central

Nouman, Muhammad Tayyab; Kim, Hyun-Woong; Woo, Jeong Min; Hwang, Ji Hyun; Kim, Dongju; Jang, Jae-Hyung

2016-01-01

The terahertz (THz) band of the electromagnetic spectrum, with frequencies ranging from 300 GHz to 3 THz, has attracted wide interest in recent years owing to its potential applications in numerous areas. Significant progress has been made toward the development of devices capable of actively controlling terahertz waves; nonetheless, further advances in device functionality are necessary for employment of these devices in practical terahertz systems. Here, we demonstrate a low voltage, sharp switching terahertz modulator device based on metamaterials integrated with metal semiconductor metal (MSM) varactors, fabricated on an AlGaAs/InGaAs based heterostructure. By varying the applied voltage to the MSM-varactor located at the center of split ring resonator (SRR), the resonance frequency of the SRR-based metamaterial is altered. Upon varying the bias voltage from 0 V to 3 V, the resonance frequency exhibits a transition from 0.52 THz to 0.56 THz, resulting in a modulation depth of 45 percent with an insertion loss of 4.3 dB at 0.58 THz. This work demonstrates a new approach for realizing active terahertz devices with improved functionalities. PMID:27194128

Triple voltage dc-to-dc converter and method

DOEpatents

Su, Gui-Jia

2008-08-05

A circuit and method of providing three dc voltage buses and transforming power between a low voltage dc converter and a high voltage dc converter, by coupling a primary dc power circuit and a secondary dc power circuit through an isolation transformer; providing the gating signals to power semiconductor switches in the primary and secondary circuits to control power flow between the primary and secondary circuits and by controlling a phase shift between the primary voltage and the secondary voltage. The primary dc power circuit and the secondary dc power circuit each further comprising at least two tank capacitances arranged in series as a tank leg, at least two resonant switching devices arranged in series with each other and arranged in parallel with the tank leg, and at least one voltage source arranged in parallel with the tank leg and the resonant switching devices, said resonant switching devices including power semiconductor switches that are operated by gating signals. Additional embodiments having a center-tapped battery on the low voltage side and a plurality of modules on both the low voltage side and the high voltage side are also disclosed for the purpose of reducing ripple current and for reducing the size of the components.

Plasma Reflection in Multigrain Layers of Narrow-Bandgap Semiconductors

NASA Astrophysics Data System (ADS)

Zhukov, N. D.; Shishkin, M. I.; Rokakh, A. G.

2018-04-01

Qualitatively similar spectral characteristics of plasma-resonance reflection in the region of 15-25 μm were obtained for layers of electrodeposited submicron particles of InSb, InAs, and GaAs and plates of these semiconductors ground with M1-grade diamond powder. The most narrow-bandgap semiconductor InSb (intrinsic absorption edge ˜7 μm) is characterized by an absorption band at 2.1-2.3 μm, which is interpreted in terms of the model of optical excitation of electrons coupled by the Coulomb interaction. The spectra of a multigrain layer of chemically deposited PbS nanoparticles (50-70 nm) exhibited absorption maxima at 7, 10, and 17 μm, which can be explained by electron transitions obeying the energy-quantization rules for quantum dots.

Ultrathin metal-semiconductor-metal resonator for angle invariant visible band transmission filters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Kyu-Tae; Seo, Sungyong; Yong Lee, Jae

We present transmission visible wavelength filters based on strong interference behaviors in an ultrathin semiconductor material between two metal layers. The proposed devices were fabricated on 2 cm × 2 cm glass substrate, and the transmission characteristics show good agreement with the design. Due to a significantly reduced light propagation phase change associated with the ultrathin semiconductor layer and the compensation in phase shift of light reflecting from the metal surface, the filters show an angle insensitive performance up to ±70°, thus, addressing one of the key challenges facing the previously reported photonic and plasmonic color filters. This principle, described in this paper, canmore » have potential for diverse applications ranging from color display devices to the image sensors.« less

Surface Plasmon-Assisted Solar Energy Conversion.

PubMed

Dodekatos, Georgios; Schünemann, Stefan; Tüysüz, Harun

2016-01-01

The utilization of localized surface plasmon resonance (LSPR) from plasmonic noble metals in combination with semiconductors promises great improvements for visible light-driven photocatalysis, in particular for energy conversion. This review summarizes the basic principles of plasmonic photocatalysis, giving a comprehensive overview about the proposed mechanisms for enhancing the performance of photocatalytically active semiconductors with plasmonic devices and their applications for surface plasmon-assisted solar energy conversion. The main focus is on gold and, to a lesser extent, silver nanoparticles in combination with titania as semiconductor and their usage as active plasmonic photocatalysts. Recent advances in water splitting, hydrogen generation with sacrificial organic compounds, and CO2 reduction to hydrocarbons for solar fuel production are highlighted. Finally, further improvements for plasmonic photocatalysts, regarding performance, stability, and economic feasibility, are discussed for surface plasmon-assisted solar energy conversion.

The 1.083 micron tunable CW semiconductor laser

NASA Technical Reports Server (NTRS)

Wang, C. S.; Chen, Jan-Shin; Lu, Ken-Gen; Ouyang, Keng

1991-01-01

A tunable CW laser is desired to produce light equivalent to the helium spectral line at 1.08 microns. This laser will serve as an optical pumping source for He-3 and He-4 atoms used in space magnetometers. This light source can be fabricated either as a semiconductor laser diode or a pumped solid state laser. Continuous output power of greater than 10 mW is desired. Semiconductor lasers can be thermally tuned, but must be capable of locking onto the helium resonance lines. Solid state lasers must have efficient pumping sources suitable for space configuration. Additional requirements are as follows: space magnetometer applications will include low mass (less than 0.5 kg), low power consumption (less than 0.75 W), and high stability/reliability for long missions (5-10 years).

Rotator side chains trigger cooperative transition for shape and function memory effect in organic semiconductors.

PubMed

Chung, Hyunjoong; Dudenko, Dmytro; Zhang, Fengjiao; D'Avino, Gabriele; Ruzié, Christian; Richard, Audrey; Schweicher, Guillaume; Cornil, Jérôme; Beljonne, David; Geerts, Yves; Diao, Ying

2018-01-18

Martensitic transition is a solid-state phase transition involving cooperative movement of atoms, mostly studied in metallurgy. The main characteristics are low transition barrier, ultrafast kinetics, and structural reversibility. They are rarely observed in molecular crystals, and hence the origin and mechanism are largely unexplored. Here we report the discovery of martensitic transition in single crystals of two different organic semiconductors. In situ microscopy, single-crystal X-ray diffraction, Raman and nuclear magnetic resonance spectroscopy, and molecular simulations combined indicate that the rotating bulky side chains trigger cooperative transition. Cooperativity enables shape memory effect in single crystals and function memory effect in thin film transistors. We establish a molecular design rule to trigger martensitic transition in organic semiconductors, showing promise for designing next-generation smart multifunctional materials.

Electrical control of second-harmonic generation in a WSe 2 monolayer transistor

DOE PAGES

Seyler, Kyle L.; Schaibley, John R.; Gong, Pu; ...

2015-04-20

Nonlinear optical frequency conversion, in which optical fields interact with a nonlinear medium to produce new field frequencies, is ubiquitous in modern photonic systems. However, the nonlinear electric susceptibilities that give rise to such phenomena are often challenging to tune in a given material and, so far, dynamical control of optical nonlinearities remains confined to research laboratories as a spectroscopic tool. In this paper, we report a mechanism to electrically control second-order optical nonlinearities in monolayer WSe 2, an atomically thin semiconductor. We show that the intensity of second-harmonic generation at the A-exciton resonance is tunable by over an ordermore » of magnitude at low temperature and nearly a factor of four at room temperature through electrostatic doping in a field-effect transistor. Such tunability arises from the strong exciton charging effects in monolayer semiconductors, which allow for exceptional control over the oscillator strengths at the exciton and trion resonances. The exciton-enhanced second-harmonic generation is counter-circularly polarized to the excitation laser due to the combination of the two-photon and one-photon valley selection rules, which have opposite helicity in the monolayer. Finally, our study paves the way towards a new platform for chip-scale, electrically tunable nonlinear optical devices based on two-dimensional semiconductors.« less

Elimination of Intermediate-Frequency Combustion Instability in the Fastrac Engine Thrust Chamber

NASA Technical Reports Server (NTRS)

Rocker, Marvin; Nesman, Tomas E.; Turner, Jim E. (Technical Monitor)

2001-01-01

A series of tests were conducted to measure the combustion performance of the Fastrac engine thrust chamber. The thrust chamber exhibited benign, yet marginally unstable combustion. The marginally unstable combustion was characterized by chamber pressure oscillations with large amplitudes and a frequency that was too low to be identified as acoustic or high-frequency combustion instability and too high to be identified as chug or low-frequency combustion instability. The source of the buzz or intermediate-frequency combustion instability was traced to the fuel venturi whose violently noisy cavitation caused resonance in the feedline downstream. Combustion was stabilized by increasing the throat diameter of the fuel venturi such that the cavitation would occur more quietly.

The modeling of the dynamic behavior of an unsymmetrical rotor

NASA Astrophysics Data System (ADS)

Pǎrǎuşanu, Ioan; Gheorghiu, Horia; Petre, Cristian; Jiga, Gabriel; Crişan, Nicoleta

2018-02-01

The purpose of this article is to present the modeling of the dynamic behaviour of unsymmetrical rotors in relatively simple quantitative terms. Numerical simulations show that the shaft orthotropy produces a peak of resonant vibration about half the regular critical speed and, for small damping, a range of possible unstable behavior between the two critical speeds. Rotors having the shaft and/or the disks with unequal diametral moments of inertia (e.g., two-bladed small airplane propellers, wind turbines and fans) are dynamically unstable above a certain speed and some of these may return to a stable condition at a sufficiently high speed, depending on the particular magnitudes of the gyroscopic coupling and the inertia inequality.

Dipolar resonances in conductive carbon micro-fibers probed by near-field terahertz spectroscopy

DOE PAGES

Khromova, I.; Navarro-Cia, M.; Brener, I.; ...

2015-07-13

In this study, we observe dipole resonances in thin conductive carbon micro-fibers by detecting an enhanced electric field in the near-field of a single fiber at terahertz (THz) frequencies. Time-domain analysis of the electric field shows that each fiber sustains resonant current oscillations at the frequency defined by the fiber's length. Strong dependence of the observed resonance frequency and degree of field enhancement on the fibers' conductive properties enable direct non-contact probing of the THz conductivity in single carbon micro-fibers. We find the conductivity of the fibers to be within the range of 1– 5∙10 4 S/m. This approach ismore » suitable for experimental characterization of individual doped semiconductor resonators for THz metamaterials and devices.« less

Optical spectral singularities as threshold resonances

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mostafazadeh, Ali

2011-04-15

Spectral singularities are among generic mathematical features of complex scattering potentials. Physically they correspond to scattering states that behave like zero-width resonances. For a simple optical system, we show that a spectral singularity appears whenever the gain coefficient coincides with its threshold value and other parameters of the system are selected properly. We explore a concrete realization of spectral singularities for a typical semiconductor gain medium and propose a method of constructing a tunable laser that operates at threshold gain.

Electrically-detected magnetic resonance in semiconductor nanostructures inserted in microcavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagraev, Nikolay; Danilovskii, Eduard; Gets, Dmitrii

2013-12-04

We present the first findings of the new electrically-detected electron spin resonance technique (EDESR), which reveal the point defects in the ultra-narrow silicon quantum wells (Si-QW) confined by the superconductor δ-barriers. This technique allows the ESR identification without application of an external cavity, as well as a high frequency source and recorder, and with measuring the only response of the magnetoresistance caused by the microcavities embedded in the Si-QW plane.

Direct Measurements of Magnetic Polarons in Cd 1–xMn x Se Nanocrystals from Resonant Photoluminescence

DOE PAGES

Rice, W. D.; Liu, W.; Pinchetti, V.; ...

2017-04-07

In semiconductors, quantum confinement can greatly enhance the interaction between band carriers (electrons and holes) and dopant atoms. One manifestation of this enhancement is the increased stability of exciton magnetic polarons in magnetically doped nanostructures. In the limit of very strong 0D confinement that is realized in colloidal semiconductor nanocrystals, a single exciton can exert an effective exchange field B ex on the embedded magnetic dopants that exceeds several tesla. Here we use the very sensitive method of resonant photoluminescence (PL) to directly measure the presence and properties of exciton magnetic polarons in colloidal Cd 1–xMn xSe nanocrystals. Despite smallmore » Mn 2+ concentrations (x = 0.4–1.6%), large polaron binding energies up to ~26 meV are observed at low temperatures via the substantial Stokes shift between the pump laser and the resonant PL maximum, indicating nearly complete alignment of all Mn 2+ spins by B exex ≈ 10 T in these nanocrystals, in good agreement with theoretical estimates. Further, the emission line widths provide direct insight into the statistical fluctuations of the Mn 2+ spins. In conclusion, these resonant PL studies provide detailed insight into collective magnetic phenomena, especially in lightly doped nanocrystals where conventional techniques such as nonresonant PL or time-resolved PL provide ambiguous results.« less

Direct Measurements of Magnetic Polarons in Cd 1–xMn x Se Nanocrystals from Resonant Photoluminescence

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rice, W. D.; Liu, W.; Pinchetti, V.

In semiconductors, quantum confinement can greatly enhance the interaction between band carriers (electrons and holes) and dopant atoms. One manifestation of this enhancement is the increased stability of exciton magnetic polarons in magnetically doped nanostructures. In the limit of very strong 0D confinement that is realized in colloidal semiconductor nanocrystals, a single exciton can exert an effective exchange field B ex on the embedded magnetic dopants that exceeds several tesla. Here we use the very sensitive method of resonant photoluminescence (PL) to directly measure the presence and properties of exciton magnetic polarons in colloidal Cd 1–xMn xSe nanocrystals. Despite smallmore » Mn 2+ concentrations (x = 0.4–1.6%), large polaron binding energies up to ~26 meV are observed at low temperatures via the substantial Stokes shift between the pump laser and the resonant PL maximum, indicating nearly complete alignment of all Mn 2+ spins by B exex ≈ 10 T in these nanocrystals, in good agreement with theoretical estimates. Further, the emission line widths provide direct insight into the statistical fluctuations of the Mn 2+ spins. In conclusion, these resonant PL studies provide detailed insight into collective magnetic phenomena, especially in lightly doped nanocrystals where conventional techniques such as nonresonant PL or time-resolved PL provide ambiguous results.« less

Modal and thermal analysis of Les Arches unstable rock column (Vercors massif, French Alps)

NASA Astrophysics Data System (ADS)

Bottelin, P.; Lévy, C.; Baillet, L.; Jongmans, D.; Guéguen, P.

2013-08-01

A potentially unstable limestone column (˜1000 m3, Vercors, French Alps) delineated by an open rear fracture was continuously instrumented with two three-component seismic sensors from mid-May 2009 to mid-October 2011. Spectral analysis of seismic noise allowed several resonance frequencies to be determined, ranging from 6 to 21 Hz. The frequency domain decomposition (FDD) technique was applied to the ambient vibrations recorded on the top of the rock column. Three vibration modes were identified at 6, 7.5 and 9 Hz, describing the upper part of corresponding modal shapes. Finite element numerical modelling of the column dynamic response confirmed that the first two modes are bending modes perpendicular and parallel to the fracture, respectively, while the third one corresponds to torsion. Seismic noise monitoring also pointed out that resonance frequencies fluctuate with time, under thermomechanical control. For seasonal cycles, changes in frequency are due to the variations of the bulk elastic properties with temperature. At daily scale, increase in fundamental frequency with temperature has been interpreted as resulting from the rock expansion inducing a closure of the rear fracture rock bridges, hence stiffening the contact between the column and the rock mass. Conversely, the rock contraction induces a fracture opening and a decrease in resonance frequency. In winter, when the temperature drops below 0 °C, a dramatic increase in fundamental frequency is observed from 6 Hz to more than 25 Hz, resulting from ice formation in the fracture. During spring, the resonance frequency gradually diminishes with ice melting to reach the value measured before winter.

Evaluation of Intrinsic Charge Carrier Transport at Insulator-Semiconductor Interfaces Probed by a Non-Contact Microwave-Based Technique

PubMed Central

Honsho, Yoshihito; Miyakai, Tomoyo; Sakurai, Tsuneaki; Saeki, Akinori; Seki, Shu

2013-01-01

We have successfully designed the geometry of the microwave cavity and the thin metal electrode, achieving resonance of the microwave cavity with the metal-insulator-semiconductor (MIS) device structure. This very simple MIS device operates in the cavity, where charge carriers are injected quantitatively by an applied bias at the insulator-semiconductor interface. The local motion of the charge carriers was clearly probed through the applied external microwave field, also giving the quantitative responses to the injected charge carrier density and charge/discharge characteristics. By means of the present measurement system named field-induced time-resolved microwave conductivity (FI-TRMC), the pentacene thin film in the MIS device allowed the evaluation of the hole and electron mobility at the insulator-semiconductor interface of 6.3 and 0.34 cm2 V−1 s−1, respectively. This is the first report on the direct, intrinsic, non-contact measurement of charge carrier mobility at interfaces that has been fully experimentally verified. PMID:24212382

Tailoring the Spectroscopic Properties of Semiconductor Nanowires via Surface-Plasmon-Based Optical Engineering

PubMed Central

2014-01-01

Semiconductor nanowires, due to their unique electronic, optical, and chemical properties, are firmly placed at the forefront of nanotechnology research. The rich physics of semiconductor nanowire optics arises due to the enhanced light–matter interactions at the nanoscale and coupling of optical modes to electronic resonances. Furthermore, confinement of light can be taken to new extremes via coupling to the surface plasmon modes of metal nanostructures integrated with nanowires, leading to interesting physical phenomena. This Perspective will examine how the optical properties of semiconductor nanowires can be altered via their integration with highly confined plasmonic nanocavities that have resulted in properties such as orders of magnitude faster and more efficient light emission and lasing. The use of plasmonic nanocavities for tailored optical absorption will also be discussed in order to understand and engineer fundamental optical properties of these hybrid systems along with their potential for novel applications, which may not be possible with purely dielectric cavities. PMID:25396030

Plasmonic Enhancement Mechanisms in Solar Energy Harvesting

NASA Astrophysics Data System (ADS)

Cushing, Scott K.

Semiconductor photovoltaics (solar-to-electrical) and photocatalysis (solar-to-chemical) requires sunlight to be converted into excited charge carriers with sufficient lifetimes and mobility to drive a current or photoreaction. Thin semiconductor films are necessary to reduce the charge recombination and mobility losses, but thin films also limit light absorption, reducing the solar energy conversion efficiency. Further, in photocatalysis, the band edges of semiconductor must straddle the redox potentials of a photochemical reaction, reducing light absorption to half the solar spectrum in water splitting. Plasmonics transforms metal nanoparticles into antennas with resonances tuneable across the solar spectrum. If energy can be transferred from the plasmon to the semiconductor, light absorption in the semiconductor can be increased in thin films and occur at energies smaller than the band gap. This thesis investigates why, despite this potential, plasmonic solar energy harvesting techniques rarely appear in top performing solar architectures. To accomplish this goal, the possible plasmonic enhancement mechanisms for solar energy conversion were identified, isolated, and optimized by combining systematic sample design with transient absorption spectroscopy, photoelectrochemical and photocatalytic testing, and theoretical development. Specifically, metal semiconductor nanostructures were designed to modulate the plasmon's scattering, hot carrier, and near field interactions as well as remove heating and self-catalysis effects. Transient absorption spectroscopy then revealed how the structure design affected energy and charge carrier transfer between metal and semiconductor. Correlating this data with wavelength-dependent photoconversion efficiencies and theoretical developments regarding metal-semiconductor interactions identified the origin of the plasmonic enhancement. Using this methodology, it has first been proven that three plasmonic enhancement routes are possible: i) increasing light absorption in the semiconductor by light trapping through scattering, ii) transferring hot carriers from metal to semiconductor after light absorption in the metal, and iii) non-radiative excitation of interband transitions in the semiconductor by plasmon-induced resonant energy transfer (PIRET). The effects of the metal on charge transport and carrier recombination were also revealed. Next, it has been shown that the strength and balance of the three enhancement mechanisms is rooted in the plasmon's dephasing time, or how long it takes the collective electron oscillations to stop being collective. The importance of coherent effects in plasmonic enhancement is also shown. Based on these findings, a thermodynamic balance framework has been used to predict the theoretical maximum efficiency of solar energy conversion in plasmonic metal-semiconductor heterojunctions. These calculations have revealed how plasmonics is best used to address the different light absorption problems in semiconductors, and that not taking into account the plasmon's dephasing is the origin of low plasmonic enhancement Finally, to prove these guidelines, each of the three enhancement mechanisms has been translated into optimal device geometries, showing the plasmon's potential for solar energy harvesting. This dissertation identifies the three possible plasmonic enhancement mechanisms for the first time, discovering a new enhancement mechanism (PIRET) in the process. It has also been shown for the first time that the various plasmon-semiconductor interactions could be rooted in the plasmon's dephasing. This has allowed for the first maximum efficiency estimates which have combined all three enhancement mechanisms to be performed, and revealed that changes in the plasmon's dephasing leads to the disparity in reported plasmonic enhancements. These findings are combined to create optimal device design guidelines, which are proven by fabrication of several devices with top efficiencies in plasmonic solar energy conversion. The knowledge obtained will guide the design of efficient photovoltaics and photocatalysts, helping usher in a renewable energy economy and address current needs of climate change.

Reversed field pinch operation with intelligent shell feedback control in EXTRAP T2R

NASA Astrophysics Data System (ADS)

Brunsell, P. R.; Kuldkepp, M.; Menmuir, S.; Cecconello, M.; Hedqvist, A.; Yadikin, D.; Drake, J. R.; Rachlew, E.

2006-11-01

Discharges in the thin shell reversed field pinch (RFP) device EXTRAP T2R without active feedback control are characterized by growth of non-resonant m = 1 unstable resistive wall modes (RWMs) in agreement with linear MHD theory. Resonant m = 1 tearing modes (TMs) exhibit initially fast rotation and the associated perturbed radial fields at the shell are small, but eventually TMs wall-lock and give rise to a growing radial field. The increase in the radial field at the wall due to growing RWMs and wall-locked TMs is correlated with an increase in the toroidal loop voltage, which leads to discharge termination after 3-4 wall times. An active magnetic feedback control system has been installed in EXTRAP T2R. A two-dimensional array of 128 active saddle coils (pair-connected into 64 independent m = 1 coils) is used with intelligent shell feedback control to suppress the m = 1 radial field at the shell. With feedback control, active stabilization of the full toroidal spectrum of 16 unstable m = 1 non-resonant RWMs is achieved, and TM wall locking is avoided. A three-fold extension of the pulse length, up to the power supply limit, is observed. Intelligent shell feedback control is able to maintain the plasma equilibrium for 10 wall times, with plasma confinement parameters sustained at values comparable to those obtained in thick shell devices of similar size.

Instabilities in a staircase stratified shear flow

NASA Astrophysics Data System (ADS)

Ponetti, G.; Balmforth, N. J.; Eaves, T. S.

2018-01-01

We study stratified shear flow instability where the density profile takes the form of a staircase of interfaces separating uniform layers. Internal gravity waves riding on density interfaces can resonantly interact due to a background shear flow, resulting in the Taylor-Caulfield instability. The many steps of the density profile permit a multitude of interactions between different interfaces, and a rich variety of Taylor-Caulfield instabilities. We analyse the linear instability of a staircase with piecewise-constant density profile embedded in a background linear shear flow, locating all the unstable modes and identifying the strongest. The interaction between nearest-neighbour interfaces leads to the most unstable modes. The nonlinear dynamics of the instabilities are explored in the long-wavelength, weakly stratified limit (the defect approximation). Unstable modes on adjacent interfaces saturate by rolling up the intervening layer into a distinctive billow. These nonlinear structures coexist when stacked vertically and are bordered by the sharp density gradients that are the remnants of the steps of the original staircase. Horizontal averages remain layer-like.

Utility of magnetic resonance imaging in diagnosing cervical spine injury in children with severe traumatic brain injury.

PubMed

Qualls, David; Leonard, Jeffrey R; Keller, Martin; Pineda, Jose; Leonard, Julie C

2015-06-01

Evaluation of children for cervical spine injuries (CSIs) after blunt trauma is complicated, particularly if the patient is unresponsive because of severe traumatic brain injury. Plain radiography and computed tomography (CT) are commonly used, but CT combined with magnetic resonance imaging (MRI) is still considered the gold standard in CSI detection. However, MRI is expensive and can delay cervical clearance. The purpose of this study is to determine the added benefit of MRI as an adjunct to CT in the clearance of children with severe head trauma. We performed a retrospective chart review of pediatric head trauma patients admitted to the pediatric intensive care unit at St. Louis Children's Hospital from 2002 to 2012. Patients who received both cervical spine CT and MRI and presented with a Glasgow Coma Scale score of 8 or lower were included in the study. Imaging was analyzed by two pediatric trauma subspecialists and classified as demonstrating "no injury," "stable injury," or "unstable injury." Results were compared, and discrepancies between CT and MRI findings were noted. A total of 1,196 head-injured children were admitted to the pediatric intensive care unit between January 2002 and December 2012. Sixty-three children underwent CT and MRI and met Glasgow Coma Scale criteria. Seven children were identified with negative CT and positive MRI findings, but none of these injuries were considered unstable by our criteria. Five children were determined to have unstable injuries, and all were detected on CT. The results of this study suggest that MRI does not detect unstable CSIs in the setting of negative CT imaging. Given the limited patient population for this study, further and more extensive studies investigating the utility of MRI in the head-injured pediatric patient are warranted. Diagnostic and care management study, level IV.

Exchange-mediated anisotropy of (ga,mn)as valence-band probed by resonant tunneling spectroscopy.

PubMed

Elsen, M; Jaffrès, H; Mattana, R; Tran, M; George, J-M; Miard, A; Lemaître, A

2007-09-21

We report on experiments and theory of resonant tunneling anisotropic magnetoresistance (TAMR) in AlAs/GaAs/AlAs quantum wells (QW) contacted by a (Ga,Mn)As ferromagnetic electrode. Such resonance effects manifest themselves by bias-dependent oscillations of the TAMR signal correlated to the successive positions of heavy (HH) and light (LH) quantized hole energy levels in GaAs QW. We have modeled the experimental data by calculating the spin-dependent resonant tunneling transmission in the frame of the 6 x 6 valence-band k.p theory. The calculations emphasize the opposite contributions of the (Ga,Mn)As HH and LH subbands near the Gamma point, unraveling the anatomy of the diluted magnetic semiconductor valence band.

Analytical modeling of localized surface plasmon resonance in heterostructure copper sulfide nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caldwell, Andrew H.; Ha, Don-Hyung; Ding, Xiaoyue

2014-10-28

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals is a relatively new field of investigation that promises greater tunability of plasmonic properties compared to metal nanoparticles. A novel process by which the LSPR in semiconductor nanocrystals can be altered is through heterostructure formation arising from solution-based cation exchange. Herein, we describe the development of an analytical model of LSPR in heterostructure copper sulfide-zinc sulfide nanocrystals synthesized via a cation exchange reaction between copper sulfide (Cu 1.81S) nanocrystals and Zn ions. The cation exchange reaction produces dual-interface, heterostructure nanocrystals in which the geometry of the copper sulfide phase can be tunedmore » from a sphere to a thin disk separating symmetrically-grown sulfide (ZnS) grains. Drude model electronic conduction and Mie-Gans theory are applied to describe how the LSPR wavelength changes during cation exchange, taking into account the morphology evolution and changes to the local permittivity. The results of the modeling indicate that the presence of the ZnS grains has a significant effect on the out-of-plane LSPR mode. By comparing the results of the model to previous studies on solid-solid phase transformations of copper sulfide in these nanocrystals during cation exchange, we show that the carrier concentration is independent of the copper vacancy concentration dictated by its atomic phase. The evolution of the effective carrier concentration calculated from the model suggests that the out-of-plane resonance mode is dominant. The classical model was compared to a simplified quantum mechanical model which suggested that quantum mechanical effects become significant when the characteristic size is less than ~8 nm. Overall, we find that the analytical models are not accurate for these heterostructured semiconductor nanocrystals, indicating the need for new model development for this emerging field.« less

Analytical modeling of localized surface plasmon resonance in heterostructure copper sulfide nanocrystals

NASA Astrophysics Data System (ADS)

Caldwell, Andrew H.; Ha, Don-Hyung; Ding, Xiaoyue; Robinson, Richard D.

2014-10-01

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals is a relatively new field of investigation that promises greater tunability of plasmonic properties compared to metal nanoparticles. A novel process by which the LSPR in semiconductor nanocrystals can be altered is through heterostructure formation arising from solution-based cation exchange. Herein, we describe the development of an analytical model of LSPR in heterostructure copper sulfide-zinc sulfide nanocrystals synthesized via a cation exchange reaction between copper sulfide (Cu1.81S) nanocrystals and Zn ions. The cation exchange reaction produces dual-interface, heterostructure nanocrystals in which the geometry of the copper sulfide phase can be tuned from a sphere to a thin disk separating symmetrically-grown sulfide (ZnS) grains. Drude model electronic conduction and Mie-Gans theory are applied to describe how the LSPR wavelength changes during cation exchange, taking into account the morphology evolution and changes to the local permittivity. The results of the modeling indicate that the presence of the ZnS grains has a significant effect on the out-of-plane LSPR mode. By comparing the results of the model to previous studies on solid-solid phase transformations of copper sulfide in these nanocrystals during cation exchange, we show that the carrier concentration is independent of the copper vacancy concentration dictated by its atomic phase. The evolution of the effective carrier concentration calculated from the model suggests that the out-of-plane resonance mode is dominant. The classical model was compared to a simplified quantum mechanical model which suggested that quantum mechanical effects become significant when the characteristic size is less than ˜8 nm. Overall, we find that the analytical models are not accurate for these heterostructured semiconductor nanocrystals, indicating the need for new model development for this emerging field.

Proceedings of the Workshop on Compound Semiconductor Devices and Integrated Circuits (13th) Held in Cabourg, France on 10-12 May 1989

DTIC Science & Technology

1989-05-12

USA Resonant tunneling transistors and New III-V memory devices for new circuit architectures with reduced complexity F. Capasso, Bell. Murray Hill...the evaporation, or by selective oxidation of As, leaving metallic Ga clusters and b) the interdiffusive deterioration of metal contacts on GaAs...VEB (My) Resonant Tunneling Transistors and New III-V Memory Devices for New Circuit Architectures with Reduced Complexity . Invited: F. Capasso

Ballistic transport in nanowires through non-magnetic or magnetic cavity

NASA Astrophysics Data System (ADS)

Nonoyama, Shinji; Honma, Yukari; Ono, Miyuki; Nakamura, Atsunobu

2015-07-01

Ballistic transport phenomena through a region containing a cavity in a quasi-one-dimensional quantum nanowire are investigated. Conductance curves calculated as a function of a structural parameter show quantum interference effects on transport clearly. In a special geometry, very narrow periodic dips, which are attributable to the anti-resonance, appear on the conductance curve. The nature of the virtual bound state resulting in the anti-resonance is studied in detail. Electron conductions through a small dilute magnetic semiconductor are also investigated.

Wavelength-controlled external-cavity laser with a silicon photonic crystal resonant reflector

NASA Astrophysics Data System (ADS)

Gonzalez-Fernandez, A. A.; Liles, Alexandros A.; Persheyev, Saydulla; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of an alternative design of external-cavity hybrid lasers consisting of a III-V Semiconductor Optical Amplifier with fiber reflector and a Photonic Crystal (PhC) based resonant reflector on SOI. The Silicon reflector comprises a polymer (SU8) bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and sidemode suppression ratio of more than 25 dB.

Development of a Silicon Metal-Oxide-Semiconductor-Based Qubit Using Spin Exchange Interactions Alone

DTIC Science & Technology

2016-03-31

Electron spin resonance and spin–valley physics in a silicon double quantum dot, Nature Communications, (05 2014): 0. doi: 10.1038/ncomms4860 Ming...new scheme to better manipulate the exchange-only qubit using a pulsed RF source [5], known as a resonant -exchange-qubit [6,7], in GaAs further...triple points into a quadruple point [10], as shown in Fig. 1. We can also gate control the tunnel coupling over a broad energy range. The

Quantum memory on a charge qubit in an optical microresonator

NASA Astrophysics Data System (ADS)

Tsukanov, A. V.

2017-10-01

A quantum-memory unit scheme on the base of a semiconductor structure with quantum dots is proposed. The unit includes a microresonator with single and double quantum dots performing frequencyconverter and charge-qubit functions, respectively. The writing process is carried out in several stages and it is controlled by optical fields of the resonator and laser. It is shown that, to achieve high writing probability, it is necessary to use high-Q resonators and to be able to suppress relaxation processes in quantum dots.

Tunable surface plasmon resonance frequency of Au-Ag bimetallic asymmetric structure thin films in the UV and IR region

NASA Astrophysics Data System (ADS)

Hong, Ruijin; Ji, Jialin; Tao, Chunxian; Zhang, Dawei

2016-10-01

Au/ZnO/Ag sandwich structure films were fabricated by DC magnetron sputter at room temperature. The tunability of the surface plasmon resonance wavelength was realized by varying the thickness of ZnO thin film. The effects of ZnO layer on the optical properties of Au/ZnO/Au thin films were investigated by optical absorption and Raman scattering measurements. It has been found that both the surface plasmon resonance frequency and SERS can be controlled by adjusting the thickness of ZnO layer due to the coupling of metal and semiconductor.

Resonant metamaterial detectors based on THz quantum-cascade structures

PubMed Central

Benz, A.; Krall, M.; Schwarz, S.; Dietze, D.; Detz, H.; Andrews, A. M.; Schrenk, W.; Strasser, G.; Unterrainer, K.

2014-01-01

We present the design, fabrication and characterisation of an intersubband detector employing a resonant metamaterial coupling structure. The semiconductor heterostructure relies on a conventional THz quantum-cascade laser design and is operated at zero bias for the detector operation. The same active region can be used to generate or detect light depending on the bias conditions and the vertical confinement. The metamaterial is processed directly into the top metal contact and is used to couple normal incidence radiation resonantly to the intersubband transitions. The device is capable of detecting light below and above the reststrahlenband of gallium-arsenide corresponding to the mid-infrared and THz spectral region. PMID:24608677

Room-temperature coupling between electrical current and nuclear spins in OLEDs

NASA Astrophysics Data System (ADS)

Malissa, H.; Kavand, M.; Waters, D. P.; van Schooten, K. J.; Burn, P. L.; Vardeny, Z. V.; Saam, B.; Lupton, J. M.; Boehme, C.

2014-09-01

The effects of external magnetic fields on the electrical conductivity of organic semiconductors have been attributed to hyperfine coupling of the spins of the charge carriers and hydrogen nuclei. We studied this coupling directly by implementation of pulsed electrically detected nuclear magnetic resonance spectroscopy in organic light-emitting diodes (OLEDs). The data revealed a fingerprint of the isotope (protium or deuterium) involved in the coherent spin precession observed in spin-echo envelope modulation. Furthermore, resonant control of the electric current by nuclear spin orientation was achieved with radiofrequency pulses in a double-resonance scheme, implying current control on energy scales one-millionth the magnitude of the thermal energy.

Ultrafast photoinduced charge separation in metal-semiconductor nanohybrids.

PubMed

Mongin, Denis; Shaviv, Ehud; Maioli, Paolo; Crut, Aurélien; Banin, Uri; Del Fatti, Natalia; Vallée, Fabrice

2012-08-28

Hybrid nano-objects formed by two or more disparate materials are among the most promising and versatile nanosystems. A key parameter in their properties is interaction between their components. In this context we have investigated ultrafast charge separation in semiconductor-metal nanohybrids using a model system of gold-tipped CdS nanorods in a matchstick architecture. Experiments are performed using an optical time-resolved pump-probe technique, exciting either the semiconductor or the metal component of the particles, and probing the light-induced change of their optical response. Electron-hole pairs photoexcited in the semiconductor part of the nanohybrids are shown to undergo rapid charge separation with the electron transferred to the metal part on a sub-20 fs time scale. This ultrafast gold charging leads to a transient red-shift and broadening of the metal surface plasmon resonance, in agreement with results for free clusters but in contrast to observation for static charging of gold nanoparticles in liquid environments. Quantitative comparison with a theoretical model is in excellent agreement with the experimental results, confirming photoexcitation of one electron-hole pair per nanohybrid followed by ultrafast charge separation. The results also point to the utilization of such metal-semiconductor nanohybrids in light-harvesting applications and in photocatalysis.

Planar heterostructures of single-layer transition metal dichalcogenides: Composite structures, Schottky junctions, tunneling barriers, and half metals

NASA Astrophysics Data System (ADS)

Aras, Mehmet; Kılıç, ćetin; Ciraci, S.

2017-02-01

Planar composite structures formed from the stripes of transition metal dichalcogenides joined commensurately along their zigzag or armchair edges can attain different states in a two-dimensional (2D), single-layer, such as a half metal, 2D or one-dimensional (1D) nonmagnetic metal and semiconductor. Widening of stripes induces metal-insulator transition through the confinements of electronic states to adjacent stripes, that results in the metal-semiconductor junction with a well-defined band lineup. Linear bending of the band edges of the semiconductor to form a Schottky barrier at the boundary between the metal and semiconductor is revealed. Unexpectedly, strictly 1D metallic states develop in a 2D system along the boundaries between stripes, which pins the Fermi level. Through the δ doping of a narrow metallic stripe one attains a nanowire in the 2D semiconducting sheet or narrow band semiconductor. A diverse combination of constituent stripes in either periodically repeating or finite-size heterostructures can acquire critical fundamental features and offer device capacities, such as Schottky junctions, nanocapacitors, resonant tunneling double barriers, and spin valves. These predictions are obtained from first-principles calculations performed in the framework of density functional theory.

Excess Noise Depletion of a Bose-Einstein Condensate in an Optical Cavity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Szirmai, G.; Nagy, D.; Domokos, P.

2009-02-27

Quantum fluctuations of a cavity field coupled into the motion of ultracold bosons can be strongly amplified by a mechanism analogous to the Petermann excess noise factor in lasers with unstable cavities. For a Bose-Einstein condensate in a stable optical resonator, the excess noise effect amounts to a significant depletion on long time scales.

Unstable Resonator Mid-Infrared Laser Sources

DTIC Science & Technology

2016-02-26

of individual materials depending on metal species and growth temperatures . Fig. 8 (a) Average power consumption and (b) delay of C2MOS and double...feedback lasers, chirped gratings, interferometric lithography, nanowire transistors, tunnel field- effect transistors, nanoscale epitaxial growth, nanowire...technical approaches. Approaches to wavelength tuning include thermal/operation temperature tuning [1], variable cavity length with cantilever/piezo

250-W RF-excited slab CO2 lasers using gold catalyst

NASA Astrophysics Data System (ADS)

Kyun, V. V.; Samorodov, V. G.; Shishkanov, E. F.

2003-11-01

The investigations and constructions of compact RF-excitation CO2 lasers with slab discharge channel geometry and unstable-waveguide resonators are described. The output average power scale up to 260 W from electrode area of 198 cm2 have been obtained in sealed-off mode because use a catalyst effect in discharge volume.

Square Turing patterns in reaction-diffusion systems with coupled layers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Jing; Wang, Hongli, E-mail: hlwang@pku.edu.cn, E-mail: qi@pku.edu.cn; Center for Quantitative Biology, Peking University, Beijing 100871

Square Turing patterns are usually unstable in reaction-diffusion systems and are rarely observed in corresponding experiments and simulations. We report here an example of spontaneous formation of square Turing patterns with the Lengyel-Epstein model of two coupled layers. The squares are found to be a result of the resonance between two supercritical Turing modes with an appropriate ratio. Besides, the spatiotemporal resonance of Turing modes resembles to the mode-locking phenomenon. Analysis of the general amplitude equations for square patterns reveals that the fixed point corresponding to square Turing patterns is stationary when the parameters adopt appropriate values.

Active and passive seismic methods for characterization and monitoring of unstable rock masses: field surveys, laboratory tests and modeling.

NASA Astrophysics Data System (ADS)

Colombero, Chiara; Baillet, Laurent; Comina, Cesare; Jongmans, Denis; Vinciguerra, Sergio

2016-04-01

Appropriate characterization and monitoring of potentially unstable rock masses may provide a better knowledge of the active processes and help to forecast the evolution to failure. Among the available geophysical methods, active seismic surveys are often suitable to infer the internal structure and the fracturing conditions of the unstable body. For monitoring purposes, although remote-sensing techniques and in-situ geotechnical measurements are successfully tested on landslides, they may not be suitable to early forecast sudden rapid rockslides. Passive seismic monitoring can help for this purpose. Detection, classification and localization of microseismic events within the prone-to-fall rock mass can provide information about the incipient failure of internal rock bridges. Acceleration to failure can be detected from an increasing microseismic event rate. The latter can be compared with meteorological data to understand the external factors controlling stability. On the other hand, seismic noise recorded on prone-to-fall rock slopes shows that the temporal variations in spectral content and correlation of ambient vibrations can be related to both reversible and irreversible changes within the rock mass. We present the results of the active and passive seismic data acquired at the potentially unstable granitic cliff of Madonna del Sasso (NW Italy). Down-hole tests, surface refraction and cross-hole tomography were carried out for the characterization of the fracturing state of the site. Field surveys were implemented with laboratory determination of physico-mechanical properties on rock samples and measurements of the ultrasonic pulse velocity. This multi-scale approach led to a lithological interpretation of the seismic velocity field obtained at the site and to a systematic correlation of the measured velocities with physical properties (density and porosity) and macroscopic features of the granitic cliff (fracturing, weathering and anisotropy). Continuous passive seismic monitoring at the site, from October 2013 to present, systematically highlighted clear energy peaks in the spectral content of seismic noise on the unstable sector, interpreted as resonant frequencies of the investigated volume. Both spectral analysis and cross-correlation of seismic noise showed seasonal reversible variation trends related to air temperature fluctuations. No irreversible changes, resulting from serious damage processes within the rock mass, were detected so far. Modal analysis and geomechanical modeling of the unstable cliff are currently under investigation to better understand the vibration modes that could explain the measured amplitude and orientation of ground motion at the first resonant frequencies. Classification and location of microseismic events still remains the most challenging task, due to the complex structural and morphological setting of the site.

Anomalous resonances of an optical microcavity with a hyperbolic metamaterial core

NASA Astrophysics Data System (ADS)

Travkin, Evgenij; Kiel, Thomas; Sadofev, Sergey; Busch, Kurt; Benson, Oliver; Kalusniak, Sascha

2018-05-01

We embed a hyperbolic metamaterial based on stacked layer pairs of epitaxially grown ZnO/ZnO:Ga in a monolithic optical microcavity, and we investigate the arising unique resonant effects experimentally and theoretically. Unlike traditional metals, the semiconductor-based approach allows us to utilize all three permittivity regions of the hyperbolic metamaterial in the near-infrared spectral range. This configuration gives rise to modes of identical orders appearing at different frequencies, a zeroth-order resonance in an all-positive permittivity region, and a continuum of high-order modes. In addition, an unusual lower cutoff frequency is introduced to the resonator mode spectrum. The observed effects expand the possibilities for customization of optical resonators; in particular, the zeroth-order and high-order modes hold strong potential for the realization of deeply subwavelength cavity sizes.

Investigation of the basic physics of high efficiency semiconductor hot carrier solar cell

NASA Technical Reports Server (NTRS)

Alfano, R. R.; Wang, W. B.; Mohaidat, J. M.; Cavicchia, M. A.; Raisky, O. Y.

1995-01-01

The main purpose of this research program is to investigate potential semiconductor materials and their multi-band-gap MQW (multiple quantum wells) structures for high efficiency solar cells for aerospace and commercial applications. The absorption and PL (photoluminescence) spectra, the carrier dynamics, and band structures have been investigated for semiconductors of InP, GaP, GaInP, and InGaAsP/InP MQW structures, and for semiconductors of GaAs and AlGaAs by previous measurements. The barrier potential design criteria for achieving maximum energy conversion efficiency, and the resonant tunneling time as a function of barrier width in high efficiency MQW solar cell structures have also been investigated in the first two years. Based on previous carrier dynamics measurements and the time-dependent short circuit current density calculations, an InAs/InGaAs - InGaAs/GaAs - GaAs/AlGaAs MQW solar cell structure with 15 bandgaps has been designed. The absorption and PL spectra in InGaAsP/InP bulk and MQW structures were measured at room temperature and 77 K with different pump wavelength and intensity, to search for resonant states that may affect the solar cell activities. Time-resolved IR absorption for InGaAsP/InP bulk and MQW structures has been measured by femtosecond visible-pump and IR-probe absorption spectroscopy. This, with the absorption and PL measurements, will be helpful to understand the basic physics and device performance in multi-bandgap InAs/InGaAs - InGaAs/InP - InP/InGaP MQW solar cells. In particular, the lifetime of the photoexcited hot electrons is an important parameter for the device operation of InGaAsP/InP MQW solar cells working in the resonant tunneling conditions. Lastly, time evolution of the hot electron relaxation in GaAs has been measured in the temperature range of 4 K through 288 K using femtosecond pump-IR-probe absorption technique. The temperature dependence of the hot electron relaxation time in the X valley has been measured.

Self-injection locked blue laser

NASA Astrophysics Data System (ADS)

Donvalkar, Prathamesh S.; Savchenkov, Anatoliy; Matsko, Andrey

2018-04-01

We demonstrate a 446.5 nm GaN semiconductor laser with sub-MHz linewidth. The linewidth reduction is achieved by locking the laser to a magnesium fluoride whispering gallery mode resonator characterized with 109 quality factor. Self-injection locking ensures single longitudinal mode operation of the laser.

Epsilon-near-zero modes for tailored light-matter interaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campione, Salvatore; Liu, Sheng; Benz, Alexander

Epsilon-near-zero (ENZ) modes arising from condensed-matter excitations such as phonons and plasmons are a new path for tailoring light-matter interactions at the nanoscale. Complex spectral shaping can be achieved by creating such modes in nanoscale semiconductor layers and controlling their interaction with multiple, distinct, dipole resonant systems. Examples of this behavior are presented at midinfrared frequencies for ENZ modes that are strongly coupled to metamaterial resonators and simultaneously strongly coupled to semiconductor phonons or quantum-well intersubband transitions (ISTs), resulting in double- and triple-polariton branches in transmission spectra. For the double-polariton branch case, we find that the best strategy to maximizemore » the Rabi splitting is to use a combination of a doped layer supporting an ENZ feature and a layer supporting ISTs, with overlapping ENZ and IST frequencies. As a result, this design flexibility renders this platform attractive for low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.« less

Light-controlled plasmon switching using hybrid metal-semiconductor nanostructures.

PubMed

Paudel, Hari P; Leuenberger, Michael N

2012-06-13

We present a proof of concept for the dynamic control over the plasmon resonance frequencies in a hybrid metal-semiconductor nanoshell structure with Ag core and TiO(2) coating. Our method relies on the temporary change of the dielectric function ε of TiO(2) achieved through temporarily generated electron-hole pairs by means of a pump laser pulse. This change in ε leads to a blue shift of the Ag surface plasmon frequency. We choose TiO(2) as the environment of the Ag core because the band gap energy of TiO(2) is larger than the Ag surface plasmon energy of our nanoparticles, which allows the surface plasmon being excited without generating electron-hole pairs in the environment at the same time. We calculate the magnitude of the plasmon resonance shift as a function of electron-hole pair density and obtain shifts up to 126 nm at wavelengths around 460 nm. Using our results, we develop the model of a light-controlled surface plasmon polariton switch.

Inverse spin Hall effect from pulsed spin current in organic semiconductors with tunable spin-orbit coupling.

PubMed

Sun, Dali; van Schooten, Kipp J; Kavand, Marzieh; Malissa, Hans; Zhang, Chuang; Groesbeck, Matthew; Boehme, Christoph; Valy Vardeny, Z

2016-08-01

Exploration of spin currents in organic semiconductors (OSECs) induced by resonant microwave absorption in ferromagnetic substrates is appealing for potential spintronics applications. Owing to the inherently weak spin-orbit coupling (SOC) of OSECs, their inverse spin Hall effect (ISHE) response is very subtle; limited by the microwave power applicable under continuous-wave (cw) excitation. Here we introduce a novel approach for generating significant ISHE signals in OSECs using pulsed ferromagnetic resonance, where the ISHE is two to three orders of magnitude larger compared to cw excitation. This strong ISHE enables us to investigate a variety of OSECs ranging from π-conjugated polymers with strong SOC that contain intrachain platinum atoms, to weak SOC polymers, to C60 films, where the SOC is predominantly caused by the curvature of the molecule's surface. The pulsed-ISHE technique offers a robust route for efficient injection and detection schemes of spin currents at room temperature, and paves the way for spin orbitronics in plastic materials.

Off-Resonance Photosensitization of a Photorefractive Polymer Composite Using PbS Nanocrystals

DOE PAGES

Moon, Jong-Sik; Liang, Yichen; Stevens, Tyler E.; ...

2015-05-26

The photosensitization of photorefractive polymeric composites for operation at 633 nm is accomplished through the inclusion of narrow band gap semiconductor nanocrystals composed of PbS. Unlike previous studies involving photosensitization of photorefractive polymer composites with inorganic nanocrystals, we employ an off-resonance approach where the first excitonic transition associated with the PbS nanocrystals lies at ~1220 nm and not the wavelength of operation. Using this methodology, internal diffraction efficiencies exceeding 82%, two-beam-coupling gain coefficients of 211 cm –1, and response times of 34 ms have been observed, representing some of the best figures of merit reported for this class of materials.more » Furthermore, these data demonstrate the ability of semiconductor nanocrystals to compete effectively with traditional organic photosensitizers. In addition to superior performance, this approach also offers an inexpensive and easy means by which to photosensitize composite materials. Additionally, the photoconductive characteristics of the composites used for this study will also be considered.« less

Epsilon-near-zero modes for tailored light-matter interaction

DOE PAGES

Campione, Salvatore; Liu, Sheng; Benz, Alexander; ...

2015-10-20

Epsilon-near-zero (ENZ) modes arising from condensed-matter excitations such as phonons and plasmons are a new path for tailoring light-matter interactions at the nanoscale. Complex spectral shaping can be achieved by creating such modes in nanoscale semiconductor layers and controlling their interaction with multiple, distinct, dipole resonant systems. Examples of this behavior are presented at midinfrared frequencies for ENZ modes that are strongly coupled to metamaterial resonators and simultaneously strongly coupled to semiconductor phonons or quantum-well intersubband transitions (ISTs), resulting in double- and triple-polariton branches in transmission spectra. For the double-polariton branch case, we find that the best strategy to maximizemore » the Rabi splitting is to use a combination of a doped layer supporting an ENZ feature and a layer supporting ISTs, with overlapping ENZ and IST frequencies. As a result, this design flexibility renders this platform attractive for low-voltage tunable filters, light-emitting diodes, and efficient nonlinear composite materials.« less

On-demand semiconductor single-photon source with near-unity indistinguishability.

PubMed

He, Yu-Ming; He, Yu; Wei, Yu-Jia; Wu, Dian; Atatüre, Mete; Schneider, Christian; Höfling, Sven; Kamp, Martin; Lu, Chao-Yang; Pan, Jian-Wei

2013-03-01

Single-photon sources based on semiconductor quantum dots offer distinct advantages for quantum information, including a scalable solid-state platform, ultrabrightness and interconnectivity with matter qubits. A key prerequisite for their use in optical quantum computing and solid-state networks is a high level of efficiency and indistinguishability. Pulsed resonance fluorescence has been anticipated as the optimum condition for the deterministic generation of high-quality photons with vanishing effects of dephasing. Here, we generate pulsed single photons on demand from a single, microcavity-embedded quantum dot under s-shell excitation with 3 ps laser pulses. The π pulse-excited resonance-fluorescence photons have less than 0.3% background contribution and a vanishing two-photon emission probability. Non-postselective Hong-Ou-Mandel interference between two successively emitted photons is observed with a visibility of 0.97(2), comparable to trapped atoms and ions. Two single photons are further used to implement a high-fidelity quantum controlled-NOT gate.

Enhancing Spin Filters by Use of Bulk Inversion Asymmetry

NASA Technical Reports Server (NTRS)

Ting, David; Cartoixa,Xavier

2007-01-01

Theoretical calculations have shown that the degrees of spin polarization in proposed nonmagnetic semiconductor resonant tunneling spin filters could be increased through exploitation of bulk inversion asymmetry (BIA). These enhancements would be effected through suitable orientation of spin collectors (or spin-polarization- inducing lateral electric fields), as described below. Spin filters -- more precisely, sources of spin-polarized electron currents -- have been sought for research on, and development of, the emerging technological discipline of spintronics (spin-transport electronics). The proposed spin filters were to be based on the Rashba effect, which is an energy splitting of what would otherwise be degenerate quantum states, caused by a spinorbit interaction in conjunction with a structural-inversion asymmetry (SIA) in the presence of interfacial electric fields in a semiconductor heterostructure. The magnitude of the energy split is proportional to the electron wave number. In a spin filter, the spin-polarized currents produced by the Rashba effect would be extracted by quantum-mechanical resonant tunneling.

Suppression of Helmholtz resonance using inside acoustic liner

NASA Astrophysics Data System (ADS)

Hong, Zhiliang; Dai, Xiwen; Zhou, Nianfa; Sun, Xiaofeng; Jing, Xiaodong

2014-08-01

When a Helmholtz resonator is exposed to grazing flow, an unstable shear layer at the opening can cause the occurrence of acoustic resonance under appropriate conditions. In this paper, in order to suppress the flow-induced resonance, the effects of inside acoustic liners placed on the side wall or the bottom of a Helmholtz resonator are investigated. Based on the one-dimensional sound propagation theory, the time domain impedance model of a Helmholtz resonator with inside acoustic liner is derived, and then combined with a discrete vortex model the resonant behavior of the resonator under grazing flow is simulated. Besides, an experiment is conducted to validate the present model, showing significant reduction of the peak sound pressure level achieved by the use of the side-wall liners. And the simulation results match reasonably well with the experimental data. The present results reveal that the inside acoustic liner can not only absorb the resonant sound pressure, but also suppress the fluctuation motion of the shear layer over the opening of the resonator. In all, the impact of the acoustic liners is to dampen the instability of the flow-acoustic coupled system. This demonstrates that it is a convenient and effective method for suppressing Helmholtz resonance by using inside acoustic liner.

Electronic and magnetic properties of second main-group and second sub-group metals substitution for Al in delafossite CuAlO2

NASA Astrophysics Data System (ADS)

Liu, Qi-Jun; Liu, Fu-Sheng; Liu, Zheng-Tang

2015-07-01

A systematic theoretical investigation has been carried out for the structural, electronic and magnetic properties of second main-group and second sub-group metals substitution for Al in delafossite CuAlO2 in the framework of density functional theory. The structural parameters and formation energies were calculated and discussed. The appearance of enhanced p-type conductivity after doping has been analyzed. Moreover, it is shown that all dopants have relatively large magnetic moments, but their ferromagnetic states are unstable, showing that their potential application in dilute magnetic semiconductors is not applicable.

A hybrid scenario for gas giant planet formation in rings

NASA Astrophysics Data System (ADS)

Durisen, Richard H.; Cai, Kai; Mejía, Annie C.; Pickett, Megan K.

2005-02-01

The core-accretion mechanism for gas giant formation may be too slow to create all observed gas giant planets during reasonable gas disk lifetimes, but it has yet to be firmly established that the disk instability model can produce permanent bound gaseous protoplanets under realistic conditions. Based on our recent simulations of gravitational instabilities in disks around young stars, we suggest that, even if instabilities due to disk self-gravity do not produce gaseous protoplanets directly, they may create persistent dense rings that are conducive to accelerated growth of gas giants through core accretion. The rings occur at and near the boundary between stable and unstable regions of the disk and appear to be produced by resonances with discrete spiral modes on the unstable side.

Sticking our neck out: is magnetic resonance imaging needed to clear an obtunded patient's cervical spine?

PubMed

Satahoo, Shevonne S; Davis, James S; Garcia, George D; Alsafran, Salman; Pandya, Reeni K; Richie, Cheryl D; Habib, Fahim; Rivas, Luis; Namias, Nicholas; Schulman, Carl I

2014-03-01

Evaluating the cervical spine in the obtunded trauma patient is a subject fraught with controversy. Some authors assert that a negative computed tomography (CT) scan is sufficient. Others argue that CT alone misses occult unstable injuries, and magnetic resonance imaging (MRI) will alter treatment. This study examines the data in an urban, county trauma center to determine if a negative cervical spine CT scan is sufficient to clear the obtunded trauma patient. Records of all consecutive patients admitted to a level 1 trauma center from January 2000 to December 2011 were retrospectively analyzed. Patients directly admitted to the intensive care unit with a Glasgow Coma Scale score ≤13, contemporaneous CT and MRI, and a negative CT reading were included. The results of the cervical spine MRI were analyzed. A total of 309 patients had both CT and MRI, 107 (35%) of whom had negative CTs. Mean time between CT and MRI was 16 d. Of those patients, seven (7%) had positive acute traumatic findings on MRI. Findings included ligamentous injury, subluxation, and fracture. However, only two of these patients required surgical intervention. None had unstable injuries. In the obtunded trauma patient with a negative cervical spine CT, obtaining an MRI does not appear to significantly alter management, and no unstable injuries were missed on CT scan. This should be taken into consideration given the current efforts at cost-containment in the health care system. It is one of the larger studies published to date. Copyright © 2014 Elsevier Inc. All rights reserved.

Hybrid Alfven resonant mode generation in the magnetosphere-ionosphere coupling system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hiraki, Yasutaka; Watanabe, Tomo-Hiko

2012-10-15

Feedback unstable Alfven waves involving global field-line oscillations and the ionospheric Alfven resonator (IAR) were comprehensively studied to clarify their properties of frequency dispersion, growth rate, and eigenfunctions. It is discovered that a new mode called here the hybrid Alfven resonant (HAR) mode can be destabilized in the magnetosphere-ionosphere coupling system with a realistic Alfven velocity profile. The HAR mode found in a high frequency range over 0.3 Hz is caused by coupling of IAR modes with strong dispersion and magnetospheric cavity resonances. The harmonic relation of HAR eigenfrequencies is characterized by a constant frequency shift from those of IARmore » modes. The three modes are robustly found even if effects of two-fluid process and ionospheric collision are taken into account and thus are anticipated to be detected by magnetic field observations in a frequency range of 0.3-1 Hz in auroral and polar-cap regions.« less

Dipole Excitation of Soft and Giant Resonances in 132Sn and neighboring unstable nuclei

NASA Astrophysics Data System (ADS)

Boretzky, Konstanze

2006-04-01

The evolution of dipole-strength distributions above the one-neutron threshold was investigated for exotic neutron-rich nuclei in a series of experiments using the electromagnetic projectile excitation at beam energies around 500 MeV/u. For halo nuclei, the large observed dipole strength (shown here for 11Be) is explained within the direct-breakup model to be of non-collective character. For neutron-rich oxygen isotopes, the origin of the observed low-lying strength is concluded to be due to single-particle transitions on theoretical grounds. The dipole strength spectra for 130,132Sn exhibit resonance-like structures observed at energies around 10 MeV exhausting a few percent of the Thomas-Reiche-Kuhn (TRK) sum rule, separated clearly from the dominant Giant Dipole Resonance (GDR). The data agree with predictions for a new dipole mode related to the oscillation of excess neutrons versus the core nucleons ("pygmy resonance").

Atlas Fractures and Atlas Osteosynthesis: A Comprehensive Narrative Review.

PubMed

Kandziora, Frank; Chapman, Jens R; Vaccaro, Alexander R; Schroeder, Gregory D; Scholz, Matti

2017-09-01

Most atlas fractures are the result of compression forces. They are often combined with fractures of the axis and especially with the odontoid process. Multiple classification systems for atlas fractures have been described. For an adequate diagnosis, a computed tomography is mandatory. To distinguish between stable and unstable atlas injury, it is necessary to evaluate the integrity of the transverse atlantal ligament (TAL) by magnetic resonance imaging and to classify the TAL lesion. Studies comparing conservative and operative management of unstable atlas fractures are unfortunately not available in the literature; neither are studies comparing different operative treatment strategies. Hence all treatment recommendations are based on low level evidence. Most of atlas fractures are stable and will be successfully managed by immobilization in a soft/hard collar. Unstable atlas fractures may be treated conservatively by halo-fixation, but nowadays more and more surgeons prefer surgery because of the potential discomfort and complications of halo-traction. Atlas fractures with a midsubstance ligamentous disruption of TAL or severe bony ligamentous avulsion can be treated by a C1/2 fusion. Unstable atlas fractures with moderate bony ligamentous avulsion may be treated by atlas osteosynthesis. Although the evidence for the different treatment strategies of atlas fractures is low, atlas osteosynthesis has the potential to change treatment philosophies. The reasons for this are described in this review.

Cascaded exciton energy transfer in a monolayer semiconductor lateral heterostructure assisted by surface plasmon polariton.

PubMed

Shi, Jinwei; Lin, Meng-Hsien; Chen, I-Tung; Mohammadi Estakhri, Nasim; Zhang, Xin-Quan; Wang, Yanrong; Chen, Hung-Ying; Chen, Chun-An; Shih, Chih-Kang; Alù, Andrea; Li, Xiaoqin; Lee, Yi-Hsien; Gwo, Shangjr

2017-06-26

Atomically thin lateral heterostructures based on transition metal dichalcogenides have recently been demonstrated. In monolayer transition metal dichalcogenides, exciton energy transfer is typically limited to a short range (~1 μm), and additional losses may be incurred at the interfacial regions of a lateral heterostructure. To overcome these challenges, here we experimentally implement a planar metal-oxide-semiconductor structure by placing a WS 2 /MoS 2 monolayer heterostructure on top of an Al 2 O 3 -capped Ag single-crystalline plate. We find that the exciton energy transfer range can be extended to tens of microns in the hybrid structure mediated by an exciton-surface plasmon polariton-exciton conversion mechanism, allowing cascaded exciton energy transfer from one transition metal dichalcogenides region supporting high-energy exciton resonance to a different transition metal dichalcogenides region in the lateral heterostructure with low-energy exciton resonance. The realized planar hybrid structure combines two-dimensional light-emitting materials with planar plasmonic waveguides and offers great potential for developing integrated photonic and plasmonic devices.Exciton energy transfer in monolayer transition metal dichalcogenides is limited to short distances. Here, Shi et al. fabricate a planar metal-oxide-semiconductor structure and show that exciton energy transfer can be extended to tens of microns, mediated by an exciton-surface-plasmon-polariton-exciton conversion mechanism.

A Study of Electron and Phonon Dynamics by Broadband Two-Dimensional THz Time-Domain Spectroscopy

NASA Astrophysics Data System (ADS)

Fu, Zhengping

Terahertz (THz) wave interacts with semiconductors in many ways, such as resonant excitation of lattice vibration, intraband transition and polaron formation. Different from the optical waves, THz wave has lower photon energy (1 THz = 4.14 meV) and is suitable for studying dynamics of low-energy excitations. Recently the studies of the interaction of THz wave and semiconductors have been extending from the linear regime to the nonlinear regime, owing to the advance of the high-intensity THz generation and detection methods. Two-dimensional (2D) spectroscopy, as a useful tool to unravel the nonlinearity of materials, has been well developed in nuclear magnetic resonance and infrared region. However, the counterpart in THz region has not been well developed and was only demonstrated at frequency around 20 THz due to the lack of intense broadband THz sources. Using laser-induced plasma as the THz source, we developed collinear broadband 2D THz time-domain spectroscopy covering from 0.5 THz to 20 THz. Broadband intense THz pulses emitted from laser-induced plasma provide access to a variety of nonlinear properties of materials. Ultrafast optical and THz pulses make it possible to resolve the transient change of the material properties with temporal resolution of tens of femtoseconds. This thesis focuses on the linear and nonlinear interaction of the THz wave with semiconductors. Since a great many physical processes, including vibrational motion of lattice and plasma oscillation, has resonant frequency in the THz range, rich physics can be studies in our experiment. The thesis starts from the linear interaction of the THz wave with semiconductors. In the narrow band gap semiconductor InSb, the plasma absorption edge, Restrahlen band and dispersion of polaritons are observed. The nonlinear response of InSb in high THz field is verified in the frequency-resolved THz Z-scan experiment. The third harmonic generations due to the anharmonicity of plasma oscillation and the second order signal due to the plasma-phonon interaction are observed in 2D THz transmission spectra. In this thesis, the coherent phonons excited by THz pulses are experimentally demonstrated for the first time in both GaAs and InSb. The resonant excitation using THz pulses enables the coherent control of the lattice motion via direct interaction of atoms and electromagnetic wave, without inducing electronic transition as reported in the optical excitation of coherent phonons. The classic model is used to explain both excitation and detection mechanisms. An increase of the damping rate of the coherent lattice motion due to higher carrier density is observed in our experiment. Transient reflectivity change of GaAs induced by THz pulses is studied in 2D THz-pump/optical-probe configuration. Using the perturbative analysis of nonlinear electrooptic effect, we conclude that the nonlinear response of GaAs to two phase-locked THz pulses is mainly caused by the nonlinearity of the electronic response.

Localized surface plasmon resonances dominated giant lateral photovoltaic effect observed in ZnO/Ag/Si nanostructure

PubMed Central

Zhang, Ke; Wang, Hui; Gan, Zhikai; Zhou, Peiqi; Mei, Chunlian; Huang, Xu; Xia, Yuxing

2016-01-01

We report substantially enlarged lateral photovoltaic effect (LPE) in the ZnO/Ag/Si nanostructures. The maximum LPE sensitivity (55.05 mv/mm) obtained in this structure is about seven times larger than that observed in the control sample (7.88 mv/mm) of ZnO/Si. We attribute this phenomenon to the strong localized surface plasmon resonances (LSPRs) induced by nano Ag semicontinuous films. Quite different from the traditional LPE in PN junction type structures, in which light-generated carriers contributed to LPE merely depends on direct excitation of light in semiconductor, this work firstly demonstrates that, by introducing a super thin metal Ag in the interface between two different kinds of semiconductors, the nanoscale Ag embedded in the interface will produce strong resonance of localized field, causing extra intraband excitation, interband excitation and an enhanced direct excitation. As a consequence, these LSPRs dominated contributions harvest much more carriers, giving rise to a greatly enhanced LPE. In particular, this LSPRs-driven mechanism constitutes a sharp contrast to the traditional LPE operation mechanism. This work suggests a brand new LSPRs approach for tailoring LPE-based devices and also opens avenues of research within current photoelectric sensors area. PMID:26965713

Plasma-Based Tunable High Frequency Power Limiter

NASA Astrophysics Data System (ADS)

Semnani, Abbas; Macheret, Sergey; Peroulis, Dimitrios

2016-09-01

Power limiters are often employed to protect sensitive receivers from being damaged or saturated by high-power incoming waves. Although wideband low-power limiters based on semiconductor technology are widely available, the options for high-power frequency-selective ones are very few. In this work, we study the application of a gas discharge tube (GDT) integrated in an evanescent-mode (EVA) cavity resonator as a plasma-based power limiter. Plasmas can inherently handle higher power in comparison with semiconductor diodes. Also, using a resonant structure provides the ability of having both lower threshold power and frequency-selective limiting, which are important if only a narrowband high-power signal is targeted. Higher input RF power results in stronger discharge in the GDT and consequently higher electron density which results in larger reflection. It is also possible to tune the threshold power by pre-ionizing the GDT with a DC bias voltage. As a proof of concept, a 2-GHz EVA resonator loaded by a 90-V GDT was fabricated and measured. With reasonable amount of insertion loss, the limiting threshold power was successfully tuned from 8.3 W to 590 mW when the external DC bias was varied from 0 to 80 V. The limiter performed well up to 100 W of maximum available input power.

Resonances in a Chaotic Attractor Crisis of the Lorenz Flow

NASA Astrophysics Data System (ADS)

Tantet, Alexis; Lucarini, Valerio; Dijkstra, Henk A.

2018-02-01

Local bifurcations of stationary points and limit cycles have successfully been characterized in terms of the critical exponents of these solutions. Lyapunov exponents and their associated covariant Lyapunov vectors have been proposed as tools for supporting the understanding of critical transitions in chaotic dynamical systems. However, it is in general not clear how the statistical properties of dynamical systems change across a boundary crisis during which a chaotic attractor collides with a saddle. This behavior is investigated here for a boundary crisis in the Lorenz flow, for which neither the Lyapunov exponents nor the covariant Lyapunov vectors provide a criterion for the crisis. Instead, the convergence of the time evolution of probability densities to the invariant measure, governed by the semigroup of transfer operators, is expected to slow down at the approach of the crisis. Such convergence is described by the eigenvalues of the generator of this semigroup, which can be divided into two families, referred to as the stable and unstable Ruelle-Pollicott resonances, respectively. The former describes the convergence of densities to the attractor (or escape from a repeller) and is estimated from many short time series sampling the state space. The latter is responsible for the decay of correlations, or mixing, and can be estimated from a long times series, invoking ergodicity. It is found numerically for the Lorenz flow that the stable resonances do approach the imaginary axis during the crisis, as is indicative of the loss of global stability of the attractor. On the other hand, the unstable resonances, and a fortiori the decay of correlations, do not flag the proximity of the crisis, thus questioning the usual design of early warning indicators of boundary crises of chaotic attractors and the applicability of response theory close to such crises.

Resonances in a Chaotic Attractor Crisis of the Lorenz Flow

NASA Astrophysics Data System (ADS)

Tantet, Alexis; Lucarini, Valerio; Dijkstra, Henk A.

2017-12-01

Local bifurcations of stationary points and limit cycles have successfully been characterized in terms of the critical exponents of these solutions. Lyapunov exponents and their associated covariant Lyapunov vectors have been proposed as tools for supporting the understanding of critical transitions in chaotic dynamical systems. However, it is in general not clear how the statistical properties of dynamical systems change across a boundary crisis during which a chaotic attractor collides with a saddle. This behavior is investigated here for a boundary crisis in the Lorenz flow, for which neither the Lyapunov exponents nor the covariant Lyapunov vectors provide a criterion for the crisis. Instead, the convergence of the time evolution of probability densities to the invariant measure, governed by the semigroup of transfer operators, is expected to slow down at the approach of the crisis. Such convergence is described by the eigenvalues of the generator of this semigroup, which can be divided into two families, referred to as the stable and unstable Ruelle-Pollicott resonances, respectively. The former describes the convergence of densities to the attractor (or escape from a repeller) and is estimated from many short time series sampling the state space. The latter is responsible for the decay of correlations, or mixing, and can be estimated from a long times series, invoking ergodicity. It is found numerically for the Lorenz flow that the stable resonances do approach the imaginary axis during the crisis, as is indicative of the loss of global stability of the attractor. On the other hand, the unstable resonances, and a fortiori the decay of correlations, do not flag the proximity of the crisis, thus questioning the usual design of early warning indicators of boundary crises of chaotic attractors and the applicability of response theory close to such crises.

Age-Specific Sex Differences in Magnetic Resonance Imaging-Depicted Carotid Intraplaque Hemorrhage.

PubMed

Singh, Navneet; Moody, Alan R; Zhang, Bowen; Kaminski, Isabella; Kapur, Kush; Chiu, Stephanie; Tyrrell, Pascal N

2017-08-01

Stroke rates are higher in men compared with women in the fourth through seventh decades of life, and higher rates may result from differences in carotid intraplaque hemorrhage (IPH), an unstable atherosclerotic plaque component. We report age-specific sex differences in the presence of magnetic resonance imaging-depicted carotid IPH. Patients (n=1115) underwent magnetic resonance imaging for carotid IPH between 2005 and 2014. Low-grade carotid stenosis patients (n=906) without prior endarterectomy were eligible for this cross-sectional study. Of the 906 patients included (mean age±SD in years, 66.98±15.15), 63 (6.95%) had carotid IPH. In men and women, carotid IPH was present in 11.43% (48 of 420) and 3.09% (15 of 486), respectively ( P <0.0001). Multivariable logistic regression analysis confirmed greater odds of carotid IPH in men for all ages: 45 to 54 (odds ratio=45.45; 95% confidence interval, 3.43-500), 55 to 64 years (odds ratio=21.74; 95% confidence interval, 3.21-142.86), 65 to 74 years (odds ratio=10.42; 95% confidence interval, 2.91-37.04), and ≥75 years (odds ratio=5.00; 95% confidence interval, 2.31-10.75). Male sex modified the effect of age on the presence of carotid IPH (β=0.074; SE=0.036; P =0.0411). Men have greater age-specific odds of magnetic resonance imaging-depicted carotid IPH compared with women. With increasing age post-menopause, the odds of carotid IPH in women becomes closer to that of men. Delayed onset of carotid IPH in women, an unstable plaque component, may partly explain differential stroke rates between sexes, and further studies are warranted. © 2017 American Heart Association, Inc.

Stable Versus Unstable Grade II High Ankle Sprains: A Prospective Study Predicting the Need for Surgical Stabilization and Time to Return to Sports.

PubMed

Calder, James D; Bamford, Richard; Petrie, Aviva; McCollum, Graham A

2016-04-01

To investigate grade II syndesmosis injuries in athletes and identify factors important in differentiating stable from dynamically unstable ankle sprains and those associated with a longer time to return to sports. Sixty-four athletes with an isolated syndesmosis injury (without fracture) were prospectively assessed, with a mean follow-up period of 37 months (range, 24 to 66 months). Those with an associated deltoid ligament injury or osteochondral lesion were included. Those whose injuries were considered stable (grade IIa) were treated conservatively with a boot and rehabilitation. Those whose injuries were clinically unstable underwent arthroscopy, and if instability was confirmed (grade IIb), the syndesmosis was stabilized. Clinical and magnetic resonance imaging assessments of injury to individual ligaments were recorded, along with time to return to play. A power analysis estimated that each group would need 28 patients. All athletes returned to the same level of professional sport. The 28 patients with grade IIa injuries returned at a mean of 45 days (range, 23 to 63 days) compared with 64 days (range, 27 to 104 days) for those with grade IIb injuries (P < .0001). There was a highly significant relationship between clinical and magnetic resonance imaging assessments of ligament injury (anterior tibiofibular ligament [ATFL], anterior-inferior tibiofibular ligament [AITFL], and deltoid ligament, P < .0001). Instability was 9.5 times as likely with a positive squeeze test and 11 times as likely with a deltoid injury. Combined injury to the anterior-inferior tibiofibular ligament and deltoid ligament was associated with a delay in return to sports. Concomitant injury to the ATFL indicated a different mechanism of injury-the syndesmosis is less likely to be unstable and is associated with an earlier return to sports. A positive squeeze test and injury to the ATFL and deltoid ligament are important factors in differentiating stable from dynamically unstable grade II injuries and may be used to identify which athletes may benefit from early arthroscopic assessment and stabilization. They may also be important in predicting the time frame for athletes' expected return to play. Level II, prospective comparative study. Copyright © 2016 Arthroscopy Association of North America. Published by Elsevier Inc. All rights reserved.

Detection of electromagnetic radiation using nonlinear materials

DOEpatents

Hwang, Harold Y.; Liu, Mengkun; Averitt, Richard D.; Nelson, Keith A.; Sternbach, Aaron; Fan, Kebin

2016-06-14

An apparatus for detecting electromagnetic radiation within a target frequency range is provided. The apparatus includes a substrate and one or more resonator structures disposed on the substrate. The substrate can be a dielectric or semiconductor material. Each of the one or more resonator structures has at least one dimension that is less than the wavelength of target electromagnetic radiation within the target frequency range, and each of the resonator structures includes at least two conductive structures separated by a spacing. Charge carriers are induced in the substrate near the spacing when the resonator structures are exposed to the target electromagnetic radiation. A measure of the change in conductivity of the substrate due to the induced charge carriers provides an indication of the presence of the target electromagnetic radiation.

Resonance fluorescence revival in a voltage-controlled semiconductor quantum dot

NASA Astrophysics Data System (ADS)

Reigue, Antoine; Lemaître, Aristide; Gomez Carbonell, Carmen; Ulysse, Christian; Merghem, Kamel; Guilet, Stéphane; Hostein, Richard; Voliotis, Valia

2018-02-01

We demonstrate systematic resonance fluorescence recovery with near-unity emission efficiency in single quantum dots embedded in a charge-tunable device in a wave-guiding geometry. The quantum dot charge state is controlled by a gate voltage, through carrier tunneling from a close-lying Fermi sea, stabilizing the resonantly photocreated electron-hole pair. The electric field cancels out the charging/discharging mechanisms from nearby traps toward the quantum dots, responsible for the usually observed inhibition of the resonant fluorescence. Fourier transform spectroscopy as a function of the applied voltage shows a strong increase in the coherence time though not reaching the radiative limit. These charge controlled quantum dots can act as quasi-perfect deterministic single-photon emitters, with one laser pulse converted into one emitted single photon.

Resonant π + γ → π + π 0 amplitude from Quantum Chromodynamics

DOE PAGES

Briceño, Raúl A.; Dudek, Jozef J.; Edwards, Robert G.; ...

2015-12-08

We present the first ab initio calculation of a radiative transition of a hadronic resonance within Quantum Chromodynamics (QCD). We compute the amplitude formore » $$\\pi\\pi \\to \\pi\\gamma^\\star$$, as a function of the energy of the $$\\pi\\pi$$ pair and the virtuality of the photon, in the kinematic regime where $$\\pi\\pi$$ couples strongly to the unstable $$\\rho$$ resonance. This exploratory calculation is performed using a lattice discretization of QCD with quark masses corresponding to $$m_\\pi \\approx 400$$ MeV. As a result, we obtain a description of the energy dependence of the transition amplitude, constrained at 48 kinematic points, that we can analytically continue to the $$\\rho$$ pole and identify from its residue the $$\\rho \\to \\pi\\gamma^\\star$$ form-factor.« less

Towards Understanding the Mechanism of Receptivity and Bypass Dynamics in Laminar Boundary Layers

NASA Technical Reports Server (NTRS)

Lasseigne, D. G.; Criminale, W. O.; Joslin, R. D.; Jackson, T. L.

1999-01-01

Three problems concerning laminar-turbulent transition are addressed by solving a series of initial value problems. The first problem is the calculation of resonance within the continuous spectrum of the Blasius boundary layer. The second is calculation of the growth of Tollmien-Schlichting waves that are a direct result of disturbances that only lie outside of the boundary layer. And, the third problem is the calculation of non-parallel effects. Together, these problems represent a unified approach to the study of freestream disturbance effects that could lead to transition. Solutions to the temporal, initial-value problem with an inhomogeneous forcing term imposed upon the flow is sought. By solving a series of problems, it is shown that: A transient disturbance lying completely outside of the boundary layer can lead to the growth of an unstable Tollmien-Schlichting wave. A resonance with the continuous spectrum leads to strong amplification that may provide a mechanism for bypass transition once nonlinear effects are considered. A disturbance with a very weak unstable Tollmien-Schlichting wave can lead to a much stronger Tollmien-Schlichting wave downstream, if the original disturbance has a significant portion of its energy in the continuum modes.

PROTON HEATING BY PICK-UP ION DRIVEN CYCLOTRON WAVES IN THE OUTER HELIOSPHERE: HYBRID EXPANDING BOX SIMULATIONS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hellinger, Petr; Trávníček, Pavel M., E-mail: petr.hellinger@asu.cas.cz

Using a one-dimensional hybrid expanding box model, we investigate properties of the solar wind in the outer heliosphere. We assume a proton–electron plasma with a strictly transverse ambient magnetic field and, aside from the expansion, we take into account the influence of a continuous injection of cold pick-up protons through the charge-exchange process between the solar wind protons and hydrogen of interstellar origin. The injected cold pick-up protons form a ring distribution function, which rapidly becomes unstable, and generate Alfvén cyclotron waves. The Alfvén cyclotron waves scatter pick-up protons to a spherical shell distribution function that thickens over that timemore » owing to the expansion-driven cooling. The Alfvén cyclotron waves heat solar wind protons in the perpendicular direction (with respect to the ambient magnetic field) through cyclotron resonance. At later times, the Alfvén cyclotron waves become parametrically unstable and the generated ion-acoustic waves heat protons in the parallel direction through Landau resonance. The resulting heating of the solar wind protons is efficient on the expansion timescale.« less

Self-resonance after inflation: Oscillons, transients, and radiation domination

NASA Astrophysics Data System (ADS)

Lozanov, Kaloian D.; Amin, Mustafa A.

2018-01-01

Homogeneous oscillations of the inflaton after inflation can be unstable to small spatial perturbations even without coupling to other fields. We show that for inflaton potentials ∝|ϕ |2n near |ϕ |=0 and flatter beyond some |ϕ |=M , the inflaton condensate oscillations can lead to self-resonance, followed by its complete fragmentation. We find that for nonquadratic minima (n >1 ), shortly after backreaction, the equation of state parameter, w →1 /3 . If M ≪mPl, radiation domination is established within less than an e -fold of expansion after the end of inflation. In this case self-resonance is efficient and the condensate fragments into transient, localised spherical objects which are unstable and decay, leaving behind them a virialized field with mean kinetic and gradient energies much greater than the potential energy. This end-state yields w =1 /3 . When M ˜mPl we observe slow and steady, self-resonance that can last many e -folds before backreaction eventually shuts it off, followed by fragmentation and w →1 /3 . We provide analytical estimates for the duration to w →1 /3 after inflation, which can be used as an upper bound (under certain assumptions) on the duration of the transition between the inflationary and the radiation dominated states of expansion. This upper bound can reduce uncertainties in CMB observables such as the spectral tilt ns, and the tensor-to-scalar ratio r . For quadratic minima (n =1 ), w →0 regardless of the value of M . This is because when M ≪mPl, long-lived oscillons form within an e -fold after inflation, and collectively behave as pressureless dust thereafter. For M ˜mPl, the self-resonance is inefficient and the condensate remains intact (ignoring long-term gravitational clustering) and keeps oscillating about the quadratic minimum, again implying w =0 .

Damping of Resonantly Forced Density Waves in Dense Planetary Rings

NASA Astrophysics Data System (ADS)

Lehmann, Marius; Schmidt, Jürgen; Salo, Heikki

2016-10-01

We address the stability of resonantly forced density waves in dense planetary rings.Already by Goldreich and Tremaine (1978) it has been argued that density waves might be unstable, depending on the relationship between the ring's viscosity and the surface mass density. In the recent paper (Schmidt et al. 2016) we have pointed out that when - within a fluid description of the ring dynamics - the criterion for viscous overstability is satisfied, forced spiral density waves become unstable as well. In this case, linear theory fails to describe the damping.We apply the multiple scale formalism to derive a weakly nonlinear damping relation from a hydrodynamical model.This relation describes the resonant excitation and nonlinear viscous damping of spiral density waves in a vertically integrated fluid disk with density dependent transport coefficients. The model consistently predicts linear instability of density waves in a ring region where the conditions for viscous overstability are met. In this case, sufficiently far away from the Lindblad resonance, the surface mass density perturbation is predicted to saturate to a constant value due to nonlinear viscous damping. In general the model wave damping lengths depend on a set of input parameters, such as the distance to the threshold for viscous overstability and the ground state surface mass density.Our new model compares reasonably well with the streamline model for nonlinear density waves of Borderies et al. 1986.Deviations become substantial in the highly nonlinear regime, corresponding to strong satellite forcing.Nevertheless, we generally observe good or at least qualitative agreement between the wave amplitude profiles of both models. The streamline approach is superior at matching the total wave profile of waves observed in Saturn's rings, while our new damping relation is a comparably handy tool to gain insight in the evolution of the wave amplitude with distance from resonance, and the different regimes of wave formation and the dependence on the parameters of the model.

The interplay of shape and crystalline anisotropies in plasmonic semiconductor nanocrystals

DOE PAGES

Kim, Jongwook; Agrawal, Ankit; Krieg, Franziska; ...

2016-05-16

Doped semiconductor nanocrystals are an emerging class of materials hosting localized surface plasmon resonance (LSPR) over a wide optical range. Studies so far have focused on tuning LSPR frequency by controlling the dopant and carrier concentrations in diverse semiconductor materials. However, the influence of anisotropic nanocrystal shape and of intrinsic crystal structure on LSPR remain poorly explored. Here, we illustrate how these two factors collaborate to determine LSPR characteristics in hexagonal cesium-doped tungsten oxide nanocrystals. The effect of shape anisotropy is systematically analyzed via synthetic control of nanocrystal aspect ratio (AR), from disks to nanorods. We demonstrate the dominant influencemore » of crystalline anisotropy, which uniquely causes strong LSPR band-splitting into two distinct peaks with comparable intensities. Modeling typically used to rationalize particle shape effects is refined by taking into account the anisotropic dielectric function due to crystalline anisotropy, thus fully accounting for the AR-dependent evolution of multiband LSPR spectra. Furthermore, this new insight into LSPR of semiconductor nanocrystals provides a novel strategy for an exquisite tuning of LSPR line shape.« less

Epitaxial growth of 100-μm thick M-type hexaferrite crystals on wide bandgap semiconductor GaN/Al{sub 2}O{sub 3} substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hu, Bolin; Su, Zhijuan; Bennett, Steve

2014-05-07

Thick barium hexaferrite BaFe{sub 12}O{sub 19} (BaM) films having thicknesses of ∼100 μm were epitaxially grown on GaN/Al{sub 2}O{sub 3} substrates from a molten-salt solution by vaporizing the solvent. X-ray diffraction measurement verified the growth of BaM (001) textured growth of thick films. Saturation magnetization, 4πM{sub s}, was measured for as-grown films to be 4.6 ± 0.2 kG and ferromagnetic resonance measurements revealed a microwave linewidth of ∼100 Oe at X-band. Scanning electron microscopy indicated clear hexagonal crystals distributed on the semiconductor substrate. These results demonstrate feasibility of growing M-type hexaferrite crystal films on wide bandgap semiconductor substrates by using a simplemore » powder melting method. It also presents a potential pathway for the integration of ferrite microwave passive devices with active semiconductor circuit elements creating system-on-a-wafer architectures.« less

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation.

PubMed

Wan, W J; Li, H; Zhou, T; Cao, J C

2017-03-08

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification.

Organic field-effect transistors using single crystals.

PubMed

Hasegawa, Tatsuo; Takeya, Jun

2009-04-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for 'plastic electronics'. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20-40 cm 2 Vs -1 , achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps.

Organic field-effect transistors using single crystals

PubMed Central

Hasegawa, Tatsuo; Takeya, Jun

2009-01-01

Organic field-effect transistors using small-molecule organic single crystals are developed to investigate fundamental aspects of organic thin-film transistors that have been widely studied for possible future markets for ‘plastic electronics’. In reviewing the physics and chemistry of single-crystal organic field-effect transistors (SC-OFETs), the nature of intrinsic charge dynamics is elucidated for the carriers induced at the single crystal surfaces of molecular semiconductors. Materials for SC-OFETs are first reviewed with descriptions of the fabrication methods and the field-effect characteristics. In particular, a benchmark carrier mobility of 20–40 cm2 Vs−1, achieved with thin platelets of rubrene single crystals, demonstrates the significance of the SC-OFETs and clarifies material limitations for organic devices. In the latter part of this review, we discuss the physics of microscopic charge transport by using SC-OFETs at metal/semiconductor contacts and along semiconductor/insulator interfaces. Most importantly, Hall effect and electron spin resonance (ESR) measurements reveal that interface charge transport in molecular semiconductors is properly described in terms of band transport and localization by charge traps. PMID:27877287

All-optical XNOR/NOT logic gates and LATCH based on a reflective vertical cavity semiconductor saturable absorber.

PubMed

Pradhan, Rajib

2014-06-10

This work proposes a scheme of all-optical XNOR/NOT logic gates based on a reflective vertical cavity semiconductor (quantum wells, QWs) saturable absorber (VCSSA). In a semiconductor Fabry-Perot cavity operated with a low-intensity resonance wavelength, both intensity-dependent saturating phase-shift and thermal phase-shift occur, which are considered in the proposed logic operations. The VCSSA-based logics are possible using the saturable behavior of reflectivity under the typical operating conditions. The low-intensity saturable reflectivity is reported for all-optical logic operations where all possible nonlinear phase-shifts are ignored. Here, saturable absorption (SA) and the nonlinear phase-shift-based all-optical XNOR/NOT gates and one-bit memory or LATCH are proposed under new operating conditions. All operations are demonstrated for a VCSSA based on InGaAs/InP QWs. These types of SA-based logic devices can be comfortably used for a signal bit rate of about 10 GHz corresponding to the carrier recovery time of the semiconductor material.

Homogeneous spectral spanning of terahertz semiconductor lasers with radio frequency modulation

PubMed Central

Wan, W. J.; Li, H.; Zhou, T.; Cao, J. C.

2017-01-01

Homogeneous broadband and electrically pumped semiconductor radiation sources emitting in the terahertz regime are highly desirable for various applications, including spectroscopy, chemical sensing, and gas identification. In the frequency range between 1 and 5 THz, unipolar quantum cascade lasers employing electron inter-subband transitions in multiple-quantum-well structures are the most powerful semiconductor light sources. However, these devices are normally characterized by either a narrow emission spectrum due to the narrow gain bandwidth of the inter-subband optical transitions or an inhomogeneous broad terahertz spectrum from lasers with heterogeneous stacks of active regions. Here, we report the demonstration of homogeneous spectral spanning of long-cavity terahertz semiconductor quantum cascade lasers based on a bound-to-continuum and resonant phonon design under radio frequency modulation. At a single drive current, the terahertz spectrum under radio frequency modulation continuously spans 330 GHz (~8% of the central frequency), which is the record for single plasmon waveguide terahertz lasers with a bound-to-continuum design. The homogeneous broadband terahertz sources can be used for spectroscopic applications, i.e., GaAs etalon transmission measurement and ammonia gas identification. PMID:28272492

Chemically etched ultrahigh-Q wedge-resonator on a silicon chip

NASA Astrophysics Data System (ADS)

Lee, Hansuek; Chen, Tong; Li, Jiang; Yang, Ki Youl; Jeon, Seokmin; Painter, Oskar; Vahala, Kerry J.

2012-06-01

Ultrahigh-Q optical resonators are being studied across a wide range of fields, including quantum information, nonlinear optics, cavity optomechanics and telecommunications. Here, we demonstrate a new resonator with a record Q-factor of 875 million for on-chip devices. The fabrication of our device avoids the requirement for a specialized processing step, which in microtoroid resonators has made it difficult to control their size and achieve millimetre- and centimetre-scale diameters. Attaining these sizes is important in applications such as microcombs and potentially also in rotation sensing. As an application of size control, stimulated Brillouin lasers incorporating our device are demonstrated. The resonators not only set a new benchmark for the Q-factor on a chip, but also provide, for the first time, full compatibility of this important device class with conventional semiconductor processing. This feature will greatly expand the range of possible `system on a chip' functions enabled by ultrahigh-Q devices.

Photocurrent mapping of near-field optical antenna resonances

NASA Astrophysics Data System (ADS)

Barnard, Edward S.; Pala, Ragip A.; Brongersma, Mark L.

2011-09-01

An increasing number of photonics applications make use of nanoscale optical antennas that exhibit a strong, resonant interaction with photons of a specific frequency. The resonant properties of such antennas are conventionally characterized by far-field light-scattering techniques. However, many applications require quantitative knowledge of the near-field behaviour, and existing local field measurement techniques provide only relative, rather than absolute, data. Here, we demonstrate a photodetector platform that uses a silicon-on-insulator substrate to spectrally and spatially map the absolute values of enhanced fields near any type of optical antenna by transducing local electric fields into photocurrent. We are able to quantify the resonant optical and materials properties of nanoscale (~50 nm) and wavelength-scale (~1 µm) metallic antennas as well as high-refractive-index semiconductor antennas. The data agree well with light-scattering measurements, full-field simulations and intuitive resonator models.

Hybrid switch for resonant power converters

DOEpatents

Lai, Jih-Sheng; Yu, Wensong

2014-09-09

A hybrid switch comprising two semiconductor switches connected in parallel but having different voltage drop characteristics as a function of current facilitates attainment of zero voltage switching and reduces conduction losses to complement reduction of switching losses achieved through zero voltage switching in power converters such as high-current inverters.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires.

PubMed

Yan, Jie-Yun

2018-06-13

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Modes in light wave propagating in semiconductor laser

NASA Technical Reports Server (NTRS)

Manko, Margarita A.

1994-01-01

The study of semiconductor laser based on an analogy of the Schrodinger equation and an equation describing light wave propagation in nonhomogeneous medium is developed. The active region of semiconductor laser is considered as optical waveguide confining the electromagnetic field in the cross-section (x,y) and allowing waveguide propagation along the laser resonator (z). The mode structure is investigated taking into account the transversal and what is the important part of the suggested consideration longitudinal nonhomogeneity of the optical waveguide. It is shown that the Gaussian modes in the case correspond to spatial squeezing and correlation. Spatially squeezed two-mode structure of nonhomogeneous optical waveguide is given explicitly. Distribution of light among the laser discrete modes is presented. Properties of the spatially squeezed two-mode field are described. The analog of Franck-Condon principle for finding the maxima of the distribution function and the analog of Ramsauer effect for control of spatial distribution of laser emission are discussed.

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires

NASA Astrophysics Data System (ADS)

Yan, Jie-Yun

2018-06-01

Excitonic terahertz photoconductivity in intrinsic semiconductor nanowires is studied. Based on the excitonic theory, the numerical method to calculate the photoconductivity spectrum in the nanowires is developed, which can simulate optical pump terahertz-probe spectroscopy measurements on real nanowires and thereby calculate the typical photoconductivity spectrum. With the help of the energetic structure deduced from the calculated linear absorption spectrum, the numerically observed shift of the resonant peak in the photoconductivity spectrum is found to result from the dominant exciton transition between excited or continuum states to the ground state, and the quantitative analysis is in good agreement with the quantum plasmon model. Besides, the dependence of the photoconductivity on the polarization of the terahertz field is also discussed. The numerical method and supporting theoretical analysis provide a new tool for experimentalists to understand the terahertz photoconductivity in intrinsic semiconductor nanowires at low temperatures or for nanowires subjected to below bandgap photoexcitation, where excitonic effects dominate.

Linear build-up of Fano resonance spectral profiles

NASA Astrophysics Data System (ADS)

Golovinski, P. A.; Yakovets, A. V.; Astapenko, V. A.

2018-06-01

The build-up dynamics of a continuous spectrum under the action of a weak laser field on a Fano resonance with the use of the pulses with the Lorentz spectrum and ultrashort pulses in the wavelet form is investigated. A dispersion-time excitation dependence of the Fano resonances in a He atom, in an InP impurity semiconductor, in longitudinal optical LO-phonons of a shallow donor exciton in pure ZnO crystals, and in metamaterials are calculated. The numerical simulation of the dynamics has shown time-dependent formation of a Fano spectral profile in the systems of different physical natures under the action of ultrashort pulses with attosecond and femtosecond durations.

Device and method for luminescence enhancement by resonant energy transfer from an absorptive thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Akselrod, Gleb M.; Bawendi, Moungi G.; Bulovic, Vladimir

Disclosed are a device and a method for the design and fabrication of the device for enhancing the brightness of luminescent molecules, nanostructures, and thin films. The device includes a mirror, a dielectric medium or spacer, an absorptive layer, and a luminescent layer. The absorptive layer is a continuous thin film of a strongly absorbing organic or inorganic material. The luminescent layer may be a continuous luminescent thin film or an arrangement of isolated luminescent species, e.g., organic or metal-organic dye molecules, semiconductor quantum dots, or other semiconductor nanostructures, supported on top of the absorptive layer.

Field localization and enhancement of phase-locked second- and third-order harmonic generation in absorbing semiconductor cavities

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roppo, V.; Charles M. Bowden Research Facility, US Army RDECOM, Redstone Arsenal, Alabama 35803; Cojocaru, C.

We predict and experimentally observe the enhancement by three orders of magnitude of phase mismatched second and third harmonic generation in a GaAs cavity at 650 and 433 nm, respectively, well above the absorption edge. Phase locking between the pump and the harmonics changes the effective dispersion of the medium and inhibits absorption. Despite hostile conditions the harmonics resonate inside the cavity and become amplified leading to relatively large conversion efficiencies. Field localization thus plays a pivotal role despite the presence of absorption, and ushers in a new class of semiconductor-based devices in the visible and uv ranges.

Semiconductor meta-surface based perfect light absorber

NASA Astrophysics Data System (ADS)

Liu, Guiqiang; Nie, Yiyou; Fu, Guolan; Liu, Xiaoshan; Liu, Yi; Tang, Li; Liu, Zhengqi

2017-04-01

We numerically proposed and demonstrated a semiconductor meta-surface light absorber, which consists of a silicon patches array on a silicon thin-film and an opaque silver substrate. The Mie resonances of the silicon patches and the fundamental cavity mode of the ultra-thin silicon film couple strongly to the incident optical field, leading to a multi-band perfect absorption. The maximal absorption is above 99.5% and the absorption is polarization-independent. Moreover, the absorption behavior is scalable in the frequency region via tuning the structural parameters. These features hold the absorber platform with wide applications in optoelectronics such as hot-electron excitation and photo-detection.

A dark-field microscope for background-free detection of resonance fluorescence from single semiconductor quantum dots operating in a set-and-forget mode

NASA Astrophysics Data System (ADS)

Kuhlmann, Andreas V.; Houel, Julien; Brunner, Daniel; Ludwig, Arne; Reuter, Dirk; Wieck, Andreas D.; Warburton, Richard J.

2013-07-01

Optically active quantum dots, for instance self-assembled InGaAs quantum dots, are potentially excellent single photon sources. The fidelity of the single photons is much improved using resonant rather than non-resonant excitation. With resonant excitation, the challenge is to distinguish between resonance fluorescence and scattered laser light. We have met this challenge by creating a polarization-based dark-field microscope to measure the resonance fluorescence from a single quantum dot at low temperature. We achieve a suppression of the scattered laser exceeding a factor of 107 and background-free detection of resonance fluorescence. The same optical setup operates over the entire quantum dot emission range (920-980 nm) and also in high magnetic fields. The major development is the outstanding long-term stability: once the dark-field point has been established, the microscope operates for days without alignment. The mechanical and optical designs of the microscope are presented, as well as exemplary resonance fluorescence spectroscopy results on individual quantum dots to underline the microscope's excellent performance.

Voltage-induced ferromagnetic resonance in magnetic tunnel junctions.

PubMed

Zhu, Jian; Katine, J A; Rowlands, Graham E; Chen, Yu-Jin; Duan, Zheng; Alzate, Juan G; Upadhyaya, Pramey; Langer, Juergen; Amiri, Pedram Khalili; Wang, Kang L; Krivorotov, Ilya N

2012-05-11

We demonstrate excitation of ferromagnetic resonance in CoFeB/MgO/CoFeB magnetic tunnel junctions (MTJs) by the combined action of voltage-controlled magnetic anisotropy (VCMA) and spin transfer torque (ST). Our measurements reveal that GHz-frequency VCMA torque and ST in low-resistance MTJs have similar magnitudes, and thus that both torques are equally important for understanding high-frequency voltage-driven magnetization dynamics in MTJs. As an example, we show that VCMA can increase the sensitivity of an MTJ-based microwave signal detector to the sensitivity level of semiconductor Schottky diodes.

Lithographic wavelength control of an external cavity laser with a silicon photonic crystal cavity-based resonant reflector.

PubMed

Liles, Alexandros A; Debnath, Kapil; O'Faolain, Liam

2016-03-01

We report the experimental demonstration of a new design for external cavity hybrid lasers consisting of a III-V semiconductor optical amplifier (SOA) with fiber reflector and a photonic crystal (PhC)-based resonant reflector on SOI. The silicon reflector is composed of an SU8 polymer bus waveguide vertically coupled to a PhC cavity and provides a wavelength-selective optical feedback to the laser cavity. This device exhibits milliwatt-level output power and side-mode suppression ratios of more than 25 dB.

K-band single-chip electron spin resonance detector.

PubMed

Anders, Jens; Angerhofer, Alexander; Boero, Giovanni

2012-04-01

We report on the design, fabrication, and characterization of an integrated detector for electron spin resonance spectroscopy operating at 27 GHz. The microsystem, consisting of an LC-oscillator and a frequency division module, is integrated onto a single silicon chip using a conventional complementary metal-oxide-semiconductor technology. The achieved room temperature spin sensitivity is about 10(8)spins/G Hz(1/2), with a sensitive volume of about (100 μm)(3). Operation at 77K is also demonstrated. Copyright © 2012 Elsevier Inc. All rights reserved.

Thermoelectric transport properties of the n-type impurity Al in PbTe

NASA Astrophysics Data System (ADS)

Jaworski, Christopher M.; Heremans, Joseph P.

2012-01-01

Because Tl and In are known to be resonant levels in IV-VI semiconductors, here we synthesize and electrically characterize lead telluride doped n-type with aluminum. The results show that Al behaves as a normal donor in PbTe, reaching a maximum electron concentration of 4 1019 cm-3. At 300 K, the thermopower, when plotted as function of electron concentration (the Pisarenko relation), follows the calculated line for the conduction band of PbTe, and no enhancement is observed that could indicate the presence of a resonant level.

Development of Vestibular Stochastic Resonance as a Sensorimotor Countermeasure: Improving Otolith Ocular and Motor Task Responses

NASA Technical Reports Server (NTRS)

Mulavara, Ajitkumar; Fiedler, Matthew; DeDios,Yiri E.; Galvan, Raquel; Bloomberg, Jacob; Wood, Scott

2011-01-01

Astronauts experience disturbances in sensorimotor function after spaceflight during the initial introduction to a gravitational environment, especially after long-duration missions. Stochastic resonance (SR) is a mechanism by which noise can assist and enhance the response of neural systems to relevant, imperceptible sensory signals. We have previously shown that imperceptible electrical stimulation of the vestibular system enhances balance performance while standing on an unstable surface. The goal of our present study is to develop a countermeasure based on vestibular SR that could improve central interpretation of vestibular input and improve motor task responses to mitigate associated risks.

Pulse evolution and mode selection characteristics in a TEA-CO2 laser perturbed by injection of external radiation

NASA Technical Reports Server (NTRS)

Flamant, P. H.; Menzies, R. T.; Kavaya, M. J.; Oppenheim, U. P.

1983-01-01

A grating-tunable TEA-CO2 laser with an unstable resonator cavity, modified to allow injection of CW CO2 laser radiation at the resonant transition line by means of an intracavity NaCl window, has been used to study the coupling requirements for generation of single frequency pulses. The width and shape of the mode selection region, and the dependence of the gain-switched spike buildup time and the pulse shapes on the intensity and detuning frequency of the injected radiation are reported. Comparisons of the experimental results with previously reported mode selection behavior are discussed.

Resonant Mode Interaction in Rayleigh-Benard Convection: Hexagon Case

NASA Astrophysics Data System (ADS)

Moroz, Vadim

2002-11-01

Resonant interaction of the "main" convection mode (q) with the first harmonic (q=sqrt(3)*q) is studied in the regime where both modes are (close to being) linearly unstable. The bifurcations and the resulting family of solutions are classified using symmetry group analysis; dependence of coefficients in amplitude equations on the fluid properties is analyzed. Main focus is made on the bifurcation from hex pattern with wavevector q*sqrt(3) to hex pattern q. Particular experimental conditions under which the bifurcation could be observed (as well as existence of other instabilities which could preempt it) are stated. Helpful discussions with Prof. Hermann Riecke are gladly acknowledged.

Ripple feedback for the resonant-filter unity-power-factor rectifier

DOE Office of Scientific and Technical Information (OSTI.GOV)

Streng, S.A.; King, R.J.

1992-07-01

An unusual bucklike unity-power-factor rectifier with a resonant load-balancing network permits current-limited operation down to zero output voltage in a single-stage-topology. However, this rectifier has been found to be sensitive to ac-line voltage distortion and is potentially unstable with realistic values of ac-line impedance. In this paper, a new ripple feedback is proposed that solves both problems. A large-signal time-varying analysis is given along with incremental, quasi-static, and low-frequency approximations. Experimental verification is provided by a 500-W 50-kHz rectifier operating from the 120-V 60-Hz distribution system.

Tunneling effect on double potential barriers GaAs and PbS

NASA Astrophysics Data System (ADS)

Prastowo, S. H. B.; Supriadi, B.; Ridlo, Z. R.; Prihandono, T.

2018-04-01

A simple model of transport phenomenon tunnelling effect through double barrier structure was developed. In this research we concentrate on the variation of electron energy which entering double potential barriers to transmission coefficient. The barriers using semiconductor materials GaAs (Galium Arsenide) with band-gap energy 1.424 eV, distance of lattice 0.565 nm, and PbS (Lead Sulphide) with band gap energy 0.41 eV distance of lattice is 18 nm. The Analysisof tunnelling effect on double potentials GaAs and PbS using Schrodinger’s equation, continuity, and matrix propagation to get transmission coefficient. The maximum energy of electron that we use is 1.0 eV, and observable from 0.0025 eV- 1.0 eV. The shows the highest transmission coefficient is0.9982 from electron energy 0.5123eV means electron can pass the barriers with probability 99.82%. Semiconductor from materials GaAs and PbS is one of selected material to design semiconductor device because of transmission coefficient directly proportional to bias the voltage of semiconductor device. Application of the theoretical analysis of resonant tunnelling effect on double barriers was used to design and develop new structure and combination of materials for semiconductor device (diode, transistor, and integrated circuit).

New Insight into the Angle Insensitivity of Ultrathin Planar Optical Absorbers for Broadband Solar Energy Harvesting.

PubMed

Liu, Dong; Yu, Haitong; Duan, Yuanyuan; Li, Qiang; Xuan, Yimin

2016-09-01

Two challenging problems still remain for optical absorbers consisting of an ultrathin planar semiconductor film on top of an opaque metallic substrate. One is the angle-insensitive mechanism and the other is the system design needed for broadband solar energy harvesting. Here, first we theoretically demonstrates that the high refractive index, instead of the ultrathin feature as reported in previous studies, is the physical origin of the angle insensitivity for ultrathin planar optical absorbers. They exhibit omnidirectional resonance for TE polarization due to the high complex refractive index difference between the semiconductor and the air, while for TM polarization the angle insensitivity persists up to an incident angle related to the semiconductor refractive index. These findings were validated by fabricating and characterizing an 18 nm Ge/Ag absorber sample (representative of small band gap semiconductors for photovoltaic applications) and a 22 nm hematite/Ag sample (representative of large band gap semiconductors for photoelectrochemical applications). Then, we took advantage of angle insensitivity and designed a spectrum splitting configuration for broadband solar energy harvesting. The cascaded solar cell and unassisted solar water splitting systems have photovoltaic and photoelectrochemical cells that are also spectrum splitters, so an external spectrum splitting element is not needed.

Linear growth of the entanglement entropy and the Kolmogorov-Sinai rate

NASA Astrophysics Data System (ADS)

Bianchi, Eugenio; Hackl, Lucas; Yokomizo, Nelson

2018-03-01

The rate of entropy production in a classical dynamical system is characterized by the Kolmogorov-Sinai entropy rate h KS given by the sum of all positive Lyapunov exponents of the system. We prove a quantum version of this result valid for bosonic systems with unstable quadratic Hamiltonian. The derivation takes into account the case of time-dependent Hamiltonians with Floquet instabilities. We show that the entanglement entropy S A of a Gaussian state grows linearly for large times in unstable systems, with a rate Λ A ≤ h KS determined by the Lyapunov exponents and the choice of the subsystem A. We apply our results to the analysis of entanglement production in unstable quadratic potentials and due to periodic quantum quenches in many-body quantum systems. Our results are relevant for quantum field theory, for which we present three applications: a scalar field in a symmetry-breaking potential, parametric resonance during post-inflationary reheating and cosmological perturbations during inflation. Finally, we conjecture that the same rate Λ A appears in the entanglement growth of chaotic quantum systems prepared in a semiclassical state.

Analysis of Petal Rotation Trajectory Characteristics

NASA Technical Reports Server (NTRS)

Anderson, Rodney L.; Campagnola, Stefano; Buffington, Brent B.

2014-01-01

In this study, the characteristics of petal rotation trajectories are explored in both the two-body and circular restricted three-body problem (CRTBP) models. Petal rotation trajectories alternate long and short resonances of different kinds to rotate the line of apsides. They are typically computed using the patched conic model, and they are used in a number of different missions and mission concepts including Cassini, JUICE, and Europa mission concepts. Petal rotation trajectories are first analyzed here using the patched conic model to quantify their characteristics and search for cases with fast rotation of the line of apsides. When they are computed in the CRTBP, they are unstable periodic orbits with corresponding stable and unstable manifolds. The characteristics of these orbits are explored from a dynamical systems perspective in the second phase of the study.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Y.; Fanning, C.G.; Siegman, A.E.

We have observed a sizable astigmatism in the output beam from a diode-pumped unstable resonator Nd:YVO{sub 4} laser operating in a single polarization and a single-longitudinal and transverse mode. The anisotropic index of refraction of the vanadate crystal has been identified as the source of this astigmatism. A theoretical prediction of the eigenmode astigmatism based on this index anisotropy is consistent with our experimental measurements. {copyright} 1997 Optical Society of America

Research of the Aerophysics Institute for the Strategic Technology Office (DARPA)

DTIC Science & Technology

1975-06-30

19. (continued) 6. Unstable Optical Resonator Cavities 7. Laser Metal Screening Program 8. Ultraviolet & Blue-Green Lasers 9. Efficient Metal...Vapor Lasers 10. Atomic Transition Probabilities 11. Computer Modeling of Laser Dynamic 12. Startified Ocean Wakes L0. (continued) In the... laser area, the major task was the screening of atomic vapors, particularly metal vapors, for new, efficient lasers in the visible and ultra

Dynamic Photochemical and Optoelectronic Control of Photonic Fano Resonances via Monolayer MoS2 Trions.

PubMed

Zhang, Xingwang; Biekert, Nicolas; Choi, Shinhyuk; Naylor, Carl H; De-Eknamkul, Chawina; Huang, Wenzhuo; Zhang, Xiaojie; Zheng, Xiaorui; Wang, Dake; Johnson, A T Charlie; Cubukcu, Ertugrul

2018-02-14

Active tunability of photonic resonances is of great interest for various applications such as optical switching and modulation based on optoelectronic materials. Manipulation of charged excitons in atomically thin transition metal dichalcogenides (TMDCs) like monolayer MoS 2 offers an unexplored route for diverse functionalities in optoelectronic nanodevices. Here, we experimentally demonstrate the dynamic photochemical and optoelectronic control of the photonic crystal Fano resonances by optical and electrical tuning of monolayer MoS 2 refractive index via trions without any chemical treatment. The strong spatial and spectral overlap between the photonic Fano mode and the active MoS 2 monolayer enables efficient modulation of the Fano resonance. Our approach offers new directions for potential applications in the development of optical modulators based on emerging 2D direct band gap semiconductors.

Experimental and theoretical studies of active control of resistive wall mode growth in the EXTRAP T2R reversed-field pinch

NASA Astrophysics Data System (ADS)

Drake, J. R.; Brunsell, P. R.; Yadikin, D.; Cecconello, M.; Malmberg, J. A.; Gregoratto, D.; Paccagnella, R.; Bolzonella, T.; Manduchi, G.; Marrelli, L.; Ortolani, S.; Spizzo, G.; Zanca, P.; Bondeson, A.; Liu, Y. Q.

2005-07-01

Active feedback control of resistive wall modes (RWMs) has been demonstrated in the EXTRAP T2R reversed-field pinch experiment. The control system includes a sensor consisting of an array of magnetic coils (measuring mode harmonics) and an actuator consisting of a saddle coil array (producing control harmonics). Closed-loop (feedback) experiments using a digital controller based on a real time Fourier transform of sensor data have been studied for cases where the feedback gain was constant and real for all harmonics (corresponding to an intelligent-shell) and cases where the feedback gain could be set for selected harmonics, with both real and complex values (targeted harmonics). The growth of the dominant RWMs can be reduced by feedback for both the intelligent-shell and targeted-harmonic control systems. Because the number of toroidal positions of the saddle coils in the array is half the number of the sensors, it is predicted and observed experimentally that the control harmonic spectrum has sidebands. Individual unstable harmonics can be controlled with real gains. However if there are two unstable mode harmonics coupled by the sideband effect, control is much less effective with real gains. According to the theory, complex gains give better results for (slowly) rotating RWMs, and experiments support this prediction. In addition, open loop experiments have been used to observe the effects of resonant field errors applied to unstable, marginally stable and robustly stable modes. The observed effects of field errors are consistent with the thin-wall model, where mode growth is proportional to the resonant field error amplitude and the wall penetration time for that mode harmonic.

Unstable behaviour of normally-off GaN E-HEMT under short-circuit

NASA Astrophysics Data System (ADS)

Martínez, P. J.; Maset, E.; Sanchis-Kilders, E.; Esteve, V.; Jordán, J.; Bta Ejea, J.; Ferreres, A.

2018-04-01

The short-circuit capability of power switching devices plays an important role in fault detection and the protection of power circuits. In this work, an experimental study on the short-circuit (SC) capability of commercial 600 V Gallium Nitride enhancement-mode high-electron-mobility transistors (E-HEMT) is presented. A different failure mechanism has been identified for commercial p-doped GaN gate (p-GaN) HEMT and metal-insulator-semiconductor (MIS) HEMT. In addition to the well known thermal breakdown, a premature breakdown is shown on both GaN HEMTs, triggered by hot electron trapping at the surface, which demonstrates that current commercial GaN HEMTs has requirements for improving their SC ruggedness.

Lateral modes of broad area semiconductor lasers - Theory and experiment

NASA Technical Reports Server (NTRS)

Lang, Robert J.; Larsson, Anders G.; Cody, Jeffrey G.

1991-01-01

Calculations of the lateral modes of an ideal broad area laser, including the nonlinear interaction between the carriers and the optical field, are made. The results include periodically modulated near fields and single- and double-lobed far fields similar to those previously measured. The unsaturable losses are higher and quantum efficiencies are lower than those determined from plane-wave approximations. Broad area InGaAs-GaAlAs-GaAs quantum-well lasers were fabricated and measured and found to closely agree with the theory in near, far, and spectrally resolved near fields. An occultation experiment on the far field confirms previously predicted unstable resonatorlike modes with V-shaped fronts.

Optoelectronic Integration

DTIC Science & Technology

1992-03-20

34 Interband Transitions in InGaAs/GaAs Strained Layer Superlattices ," J. of Vac. Sci and Technol. B, Vol. 7(5), pp. 1106-1110, 1989. 33 B. Kh...2 II. C. Resonant Cavity-Enhanced Photodetectors ................................ .............. 3 II. D. Wavelength Selective Optoelectronic...Simultions of Electronic States in Semiconductor Quantum Wells and Superlattices under Electrical Field ................................ ....... 5 II. G . G

Resonant interactions between cometary ions and low frequency electromagnetic waves

NASA Technical Reports Server (NTRS)

Thorne, Richard M.; Tsurutani, Bruce T.

1987-01-01

The conditions for resonant wave amplification in a plasma with a ring-beam distribution which is intended to model pick-up ions in a cometary environment are investigated. The inclination between the interplanetary field and the solar wind is found to play a crucial role in governing both the resonant frequency and the growth rate of any unstable mode. It is suggested that the low-frequency MHD mode should experience the most rapid amplification for intermediate inclination. In the frame of the solar wind, such waves should propagate along the field in the direction upstream toward the sun with a phase speed lower than the beaming velocity of the pick-up ions. This mechanism may account for the presence of the interior MHD waves noted by satellites over a region surrounding comets Giacobini-Zinner and Halley.

Resonant interactions between cometary ions and low frequency electromagnetic waves

NASA Astrophysics Data System (ADS)

Thorne, R. M.; Tsurutani, B. T.

1987-12-01

The conditions for resonant wave amplification in a plasma with a ring-beam distribution which is intended to model pick-up ions in a cometary environment are investigated. The inclination between the interplanetary field and the solar wind is found to play a crucial role in governing both the resonant frequency and the growth rate of any unstable mode. It is suggested that the low-frequency MHD mode should experience the most rapid amplification for intermediate inclination. In the frame of the solar wind, such waves should propagate along the field in the direction upstream toward the sun with a phase speed lower than the beaming velocity of the pick-up ions. This mechanism may account for the presence of the interior MHD waves noted by satellites over a region surrounding comets Giacobini-Zinner and Halley.

Ionization cross section, pressure shift and isotope shift measurements of osmium

NASA Astrophysics Data System (ADS)

Hirayama, Yoshikazu; Mukai, Momo; Watanabe, Yutaka; Oyaizu, Michihiro; Ahmed, Murad; Kakiguchi, Yutaka; Kimura, Sota; Miyatake, Hiroari; Schury, Peter; Wada, Michiharu; Jeong, Sun-Chan

2017-11-01

In-gas-cell laser resonance ionization spectroscopy of neutral osmium atoms was performed with the use of a two-color two-step laser resonance ionization technique. Saturation curves for the ionization scheme were measured, and the ionization cross section was experimentally determined by solving the rate equations for the ground, intermediate and ionization continuum populations. The pressure shift and pressure broadening in the resonance spectra of the excitation transition were measured. The electronic factor {F}247 for the transition {λ }1=247.7583 nm to the intermediate state was deduced from the measured isotope shifts of stable {}{188,189,{190,192}}Os isotopes. The efficient ionization scheme, pressure shift, nuclear isotope shift and {F}247 are expected to be useful for applications of laser ion sources to unstable nuclei and for nuclear spectroscopy based on laser ionization techniques.

Crystal orientation induced spin Rabi beat oscillations of point defects at the c-Si(111)/ SiO 2 interface

NASA Astrophysics Data System (ADS)

Paik, Seoyoung; Lee, Sang-Yun; Boehme, Christoph

2011-03-01

Spin-dependent electronic transitions such as certain charge carrier recombination and transport processes in semiconductors are usually governed by the Pauli blockade within pairs of two paramagnetic centers. One implication of this is that the manipulation of spin states, e.g. by magnetic resonant excitation, can produce changes to electric currents of the given semiconductor material. If both spins are changed at the same time, quantum beat effects such as beat oscillation between resonantly induced spin Rabi nutation becomes detectable through current measurements. Here, we report on electrically detected spin Rabi beat oscillation caused by pairs of 31 P donor states and Pb interface defects at the phosphorous doped Si(111)/ Si O2 interface. Due to the g-factor anisotropy of the Pb center we can tune the intra pair Larmor frequency difference (so called Larmor separation) through orientation of the sample with regard to the external magnetic field. As the Larmor separation governs the spin Rabi beat oscillation, we show experimentally how the crystal orientation can influence the beat effect.

Terahertz transmission properties of a triadic-Cantor-set photonic crystal containing a semiconductor

NASA Astrophysics Data System (ADS)

King, Tzu-Chyang; Liu, Chi-Chung; Huang, Chih-Hsi; Wu, Chien-Jang

2016-08-01

Terahertz transmission properties of a stage 3 triadic-Cantor-set photonic crystal (S3 TCS PC) containing a semiconductor of n-InSb are theoretically investigated. With the resonant frequency in the permittivity function of n-InSb, transmission responses can be classified as three regions. In the two regions with frequencies well above and below the resonant frequency, the permittivity functions are nearly a positive constant and n-InSb is dielectric-like. For these two regions, transmittance response of S3 TCS PC at a given number of periods Np reveals that, within a photonic band gap, there are two groups of defect modes with numbers of Np and Np-1, respectively. Defect modes are shown to be blue-shifted as the angle of incidence increases for both TE and TM waves. Additionally, adjusting the layer thickness enables us to control mode positions for the group of (Np-1)-mode, but the one with Np-mode is not able to be controlled. In a region of 5.1-6.2 THz, where the loss is large, there also are many transmission modes.

Near-infrared strong coupling between metamaterials and epsilon-near-zero modes in degenerately doped semiconductor nanolayers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Campione, Salvatore; Wendt, Joel R.; Keeler, Gordon Arthur

Epsilon-near-zero (ENZ) modes provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a strongly coupled system at near-infrared frequencies comprising plasmonic metamaterial resonators and ENZ modes supported by degenerately doped semiconductor nanolayers. In strongly coupled systems that combine optical cavities and intersubband transitions, the polariton splitting (i.e., the ratio of Rabi frequency to bare cavity frequency) scales with the square root of the wavelength, thus favoring the long-wavelength regime. In contrast, we observe that the polariton splitting in ENZ/metamaterial resonator systems increases linearly with the thickness of the nanolayer supporting the ENZ modes.more » In this work, we employ an indium-tin-oxide nanolayer and observe a large experimental polariton splitting of approximately 30% in the near-infrared. As a result, this approach opens up many promising applications, including nonlinear optical components and tunable optical filters based on controlling the polariton splitting by adjusting the frequency of the ENZ mode.« less

Near-infrared strong coupling between metamaterials and epsilon-near-zero modes in degenerately doped semiconductor nanolayers

DOE PAGES

Campione, Salvatore; Wendt, Joel R.; Keeler, Gordon Arthur; ...

2016-01-14

Epsilon-near-zero (ENZ) modes provide a new path for tailoring light–matter interactions at the nanoscale. In this paper, we analyze a strongly coupled system at near-infrared frequencies comprising plasmonic metamaterial resonators and ENZ modes supported by degenerately doped semiconductor nanolayers. In strongly coupled systems that combine optical cavities and intersubband transitions, the polariton splitting (i.e., the ratio of Rabi frequency to bare cavity frequency) scales with the square root of the wavelength, thus favoring the long-wavelength regime. In contrast, we observe that the polariton splitting in ENZ/metamaterial resonator systems increases linearly with the thickness of the nanolayer supporting the ENZ modes.more » In this work, we employ an indium-tin-oxide nanolayer and observe a large experimental polariton splitting of approximately 30% in the near-infrared. As a result, this approach opens up many promising applications, including nonlinear optical components and tunable optical filters based on controlling the polariton splitting by adjusting the frequency of the ENZ mode.« less

Field enhancement in plasmonic nanostructures

NASA Astrophysics Data System (ADS)

Piltan, Shiva; Sievenpiper, Dan

2018-05-01

Efficient generation of charge carriers from a metallic surface is a critical challenge in a wide variety of applications including vacuum microelectronics and photo-electrochemical devices. Replacing semiconductors with vacuum/gas as the medium of electron transport offers superior speed, power, and robustness to radiation and temperature. We propose a metallic resonant surface combining optical and electrical excitations of electrons and significantly reducing powers required using plasmon-induced enhancement of confined electric field. The properties of the device are modeled using the exact solution of the time-dependent Schrödinger equation at the barrier. Measurement results exhibit strong agreement with an analytical solution, and allow us to extract the field enhancement factor at the surface. Significant photocurrents are observed using combination of {{W}} {{{c}}{{m}}}-2 optical power and 10 V DC excitation on the surface. The model suggests optical field enhancement of 3 orders of magnitude at the metal interface due to plasmonic resonance. This simple planar structure provides valuable evidence on the electron emission mechanisms involved and it can be used for implementation of semiconductor compatible vacuum devices.

Evaluating charge noise acting on semiconductor quantum dots in the circuit quantum electrodynamics architecture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Basset, J.; Stockklauser, A.; Jarausch, D.-D.

2014-08-11

We evaluate the charge noise acting on a GaAs/GaAlAs based semiconductor double quantum dot dipole-coupled to the voltage oscillations of a superconducting transmission line resonator. The in-phase (I) and the quadrature (Q) components of the microwave tone transmitted through the resonator are sensitive to charging events in the surrounding environment of the double dot with an optimum sensitivity of 8.5×10{sup −5} e/√(Hz). A low frequency 1/f type noise spectrum combined with a white noise level of 6.6×10{sup −6} e{sup 2}/Hz above 1 Hz is extracted, consistent with previous results obtained with quantum point contact charge detectors on similar heterostructures. The slope ofmore » the 1/f noise allows to extract a lower bound for the double-dot charge qubit dephasing rate which we compare to the one extracted from a Jaynes-Cummings Hamiltonian approach. The two rates are found to be similar emphasizing that charge noise is the main source of dephasing in our system.« less

Study of Transition Mechanism in a Wake Behind an Airfoil with a Small Angle of Attack by Using a Towing Wind Tunnel

NASA Astrophysics Data System (ADS)

Morita, Toshiyuki; Maekawa, Hiroshi

This paper describes an experimental investigation of the transitional mechanism of a wake generated behind a thin airfoil with a small angle of attack in a towing wind tunnel. A linear stability analysis shows that the wake is characterized by a region of absolute instability in the near wake (x=30mm) and one of convective instability further downstream. When the airfoil starts to run in the tunnel, boundary layers develop on the upper/lower airfoil surfaces with different thickness. Since the asymmetric wake is generated, starting vortices of a single row are observed first in the wake, which is different from the Karman vortex street. The experimental results show that time-harmonic fluctuations of the starting vortex sustain in the natural transition process due to a self sustained resonance in the absolutely unstable region behind the trailing edge. The wake profile in the saturation steady state yields the vortex street structure, where the fluctuation frequency defined as the fundamental unstable mode is found in the final saturation steady state. The growth of the fundamental unstable mode in the convectively unstable region suppresses the high frequency fluctuations associated with the starting vortex generation. On the other hand, low-frequency fluctuations in the quasi-steady state sustaining in the saturation state grow gradually during the vortex street formation, which lead to the vortex deformation downstream.

Nonequilibrium Green's function theory of resonant steady state photoconduction in a double quantum well FET subject to THz radiation at plasmon frequency

NASA Astrophysics Data System (ADS)

Morgenstern Horing, Norman J.; Popov, Vyacheslav V.

2006-04-01

Recent experimental observations by X.G. Peralta and S.J. Allen, et al. of dc photoconductivity resonances in steady source-drain current subject to terahertz radiation in a grid-gated double-quantum well FET suggested an association with plasmon resonances. This association was definitively confirmed for some parameter ranges in our detailed electrodynamic absorbance calculations. In this paper we propose that the reason that the dc photoconductance resonances match the plasmon resonances in semiconductors is based on a nonlinear dynamic screening mechanism. In this, we employ a shielded potential approximation that is nonlinear in the terahertz field to determine the nonequilibrium Green's function and associated density perturbation that govern the nonequilibrium dielectric polarization of the medium. This ''conditioning'' of the system by the incident THz radiation results in resonant polarization response at the plasmon frequencies which, in turn, causes a sharp drop of the resistive shielded impurity scattering potentials and attendant increase of the dc source-drain current. This amounts to disabling the impurity scattering mechanism by plasmon resonant behavior in nonlinear screening.

GGA + U studies of the early actinide mononitrides and dinitrides

NASA Astrophysics Data System (ADS)

Obodo, K. O.; Chetty, N.

2013-11-01

We present a detailed comparative study of the electronic and mechanical properties of the early actinide mononitrides and dinitrides within the framework of the Perdew-Burke-Ernzerhof generalized gradient approximation (GGA [PBE]) and GGA + U implementations of density functional theory with the inclusion of spin-orbit coupling. The dependence of selected observables of these materials on the effective U-parameter is investigated in detail. The properties include the lattice constant, bulk modulus, charge density distribution, hybridization of the atomic orbitals, energy of formation and the lattice dynamics. The inclusion of the Hubbard U parameter results in a proper description of the 5f electrons, and is subsequently used in the determination of the structural and electronic properties of these compounds. The mononitrides and dinitrides of the early actinides are metallic except for UN2, which is a semiconductor. These actinide nitrides are non-magnetic with the exception of UN, NpN, PuN, NpN2 and PuN2 that are magnetic systems with orbital-dependent magnetic moments oriented in the z-axis. We observed that ThN2 is elastically unstable to isotropic pressure. We discovered that UN2 is thermodynamically unstable, but may be stabilized by N vacancy formation.

Synthesis of chemicals using solar energy with stable photoelectrochemically active heterostructures.

PubMed

Mubeen, Syed; Singh, Nirala; Lee, Joun; Stucky, Galen D; Moskovits, Martin; McFarland, Eric W

2013-05-08

Efficient and cost-effective conversion of solar energy to useful chemicals and fuels could lead to a significant reduction in fossil hydrocarbon use. Artificial systems that use solar energy to produce chemicals have been reported for more than a century. However the most efficient devices demonstrated, based on traditionally fabricated compound semiconductors, have extremely short working lifetimes due to photocorrosion by the electrolyte. Here we report a stable, scalable design and molecular level fabrication strategy to create photoelectrochemically active heterostructure (PAH) units consisting of an efficient semiconductor light absorber in contact with oxidation and reduction electrocatalysts and otherwise protected by alumina. The functional heterostructures are fabricated by layer-by-layer, template-directed, electrochemical synthesis in porous anodic aluminum oxide membranes to produce high density arrays of electronically autonomous, nanostructured, corrosion resistant, photoactive units (~10(9)-10(10) PAHs per cm(2)). Each PAH unit is isolated from its neighbor by the transparent electrically insulating oxide cellular enclosure that makes the overall assembly fault tolerant. When illuminated with visible light, the free floating devices have been demonstrated to produce hydrogen at a stable rate for over 24 h in corrosive hydroiodic acid electrolyte with light as the only input. The quantum efficiency (averaged over the solar spectrum) for absorbed photons-to-hydrogen conversion was 7.4% and solar-to-hydrogen energy efficiency of incident light was 0.9%. The fabrication approach is scalable for commercial manufacturing and readily adaptable to a variety of earth abundant semiconductors which might otherwise be unstable as photoelectrocatalysts.

A study of DC-DC converters with MCT's for arcjet power supplies

NASA Technical Reports Server (NTRS)

Stuart, Thomas A.

1994-01-01

Many arcjet DC power supplies use PWM full bridge converters with large arrays of parallel FET's. This report investigates an alternative supply using a variable frequency series resonant converter with small arrays of parallel MCT's (metal oxide semiconductor controlled thyristors). The reasons for this approach are to: increase reliability by reducing the number of switching devices; and decrease the surface mounting area of the switching arrays. The variable frequency series resonant approach is used because the relatively slow switching speed of the MCT precludes the use of PWM. The 10 kW converter operated satisfactorily with an efficiency of over 91 percent. Test results indicate this efficiency could be increased further by additional optimization of the series resonant inductor.

On-Demand Single Photons with High Extraction Efficiency and Near-Unity Indistinguishability from a Resonantly Driven Quantum Dot in a Micropillar.

PubMed

Ding, Xing; He, Yu; Duan, Z-C; Gregersen, Niels; Chen, M-C; Unsleber, S; Maier, S; Schneider, Christian; Kamp, Martin; Höfling, Sven; Lu, Chao-Yang; Pan, Jian-Wei

2016-01-15

Scalable photonic quantum technologies require on-demand single-photon sources with simultaneously high levels of purity, indistinguishability, and efficiency. These key features, however, have only been demonstrated separately in previous experiments. Here, by s-shell pulsed resonant excitation of a Purcell-enhanced quantum dot-micropillar system, we deterministically generate resonance fluorescence single photons which, at π pulse excitation, have an extraction efficiency of 66%, single-photon purity of 99.1%, and photon indistinguishability of 98.5%. Such a single-photon source for the first time combines the features of high efficiency and near-perfect levels of purity and indistinguishabilty, and thus opens the way to multiphoton experiments with semiconductor quantum dots.

Resonant photoemission study of pyrite-type NiS2, CoS2 and FeS2

NASA Astrophysics Data System (ADS)

Fujimori, A.; Mamiya, K.; Mizokawa, T.; Miyadai, T.; Sekiguchi, T.; Takahashi, H.; Môri, N.; Suga, S.

1996-12-01

The electronic structure of pyrite-type NiS2, CoS2, and FeS2 has been studied by photoemission spectroscopy. From resonant photoemission studies and configuration-interaction cluster-model analysis of the spectra, NiS2 is found to be a charge-transfer-type insulator, the band gap of which is formed between the occupied S 3p and the empty Ni 3d states. Cluster-model calculations indicate that the short Fe-S distance favors the low-spin (S=0) ground state in FeS2 compared to the high-spin FeS. Resonant photoemission results indicate a sign of electron correlation in the nonmagnetic semiconductor FeS2.

Faraday-Active Fabry-Perot Resonator: Transmission, Reflection, and Emissivity

NASA Technical Reports Server (NTRS)

Liptuga, Anatoliy; Morozhenko, Vasyl; Pipa, Viktor; Venger, Evgen; Kostiuk, Theodor

2011-01-01

The propagation of light within a semiconductor Faraday-active Fabry-Perot resonator (FAFR) is investigated theoretically and experimentally. It is shown that an external magnetic field radically changes the angular and spectral characteristics of transmission, reflection and emissivity of the resonator not only for polarized, but also for unpolarized light. Suppression of interference patterns and phase inversion of the interference extrema were observed in both monochromatic and polychromatic light. The investigations were carried out for the plane-parallel plates of n-InAs in the spectral range of free charge carrier absorption. The results can be used to create new controllable optical and spectroscopic devices for investigation of Faraday-active material properties and for control of parameters of plane-parallel layers and structures.

Nanowire Optoelectronics

NASA Astrophysics Data System (ADS)

Wang, Zhihuan; Nabet, Bahram

2015-12-01

Semiconductor nanowires have been used in a variety of passive and active optoelectronic devices including waveguides, photodetectors, solar cells, light-emitting diodes (LEDs), lasers, sensors, and optical antennas. We review the optical properties of these nanowires in terms of absorption, guiding, and radiation of light, which may be termed light management. Analysis of the interaction of light with long cylindrical/hexagonal structures with subwavelength diameters identifies radial resonant modes, such as Leaky Mode Resonances, or Whispering Gallery modes. The two-dimensional treatment should incorporate axial variations in "volumetric modes,"which have so far been presented in terms of Fabry-Perot (FP), and helical resonance modes. We report on finite-difference timedomain (FDTD) simulations with the aim of identifying the dependence of these modes on geometry (length, width), tapering, shape (cylindrical, hexagonal), core-shell versus core-only, and dielectric cores with semiconductor shells. This demonstrates how nanowires (NWs) form excellent optical cavities without the need for top and bottommirrors. However, optically equivalent structures such as hexagonal and cylindrical wires can have very different optoelectronic properties meaning that light management alone does not sufficiently describe the observed enhancement in upward (absorption) and downward transitions (emission) of light inNWs; rather, the electronic transition rates should be considered. We discuss this "rate management" scheme showing its strong dimensional dependence, making a case for photonic integrated circuits (PICs) that can take advantage of the confluence of the desirable optical and electronic properties of these nanostructures.

Aberration influence and active compensation on laser mode properties for asymmetric folded resonators

NASA Astrophysics Data System (ADS)

Zhang, Xiang; Hu, Zhiqiu; Yang, Wentao; Su, Likun

2017-09-01

We demonstrate the influence on mode features with introducing typical intracavity perturbation and results of aberrated wavefront compensation in a folded-type unstable resonator used in high energy lasers. The mode properties and aberration coefficient with intracavity misalignment are achieved by iterative calculation and Zernike polynomial fitting. Experimental results for the relation of intracavity maladjustment and mode characteristics are further obtained in terms of S-H detection and model wavefront reconstruction. It indicates that intracavity phase perturbation has significant influence on out coupling beam properties, and the uniform and symmetry of the mode is rapidly disrupted even by a slight misalignment of the resonator mirrors. Meanwhile, the far-field beam patterns will obviously degrade with increasing the distance between the convex mirror and the phase perturbation position even if the equivalent disturbation is inputted into such the resonator. The closed-loop device for compensating intracavity low order aberration is successfully fabricated. Moreover, Zernike defocus aberration is also effectively controlled by precisely adjusting resonator length, and the beam quality is noticeably improved.

Branching and resonant characteristics of surface plasma waves in a semi-bounded quantum plasma including spin-current effects

NASA Astrophysics Data System (ADS)

Lee, Myoung-Jae; Jung, Gwanyong; Jung, Young-Dae

2018-05-01

The dispersion relation for the waves propagating on the surface of a bounded quantum plasma with consideration of electron spin-current and ion-stream is derived and numerically investigated. We have found that one of the real parts of the wave frequency has the branching behavior beyond the instability domains. In such a region where the frequency branching occurs, the waves exhibit purely propagating mode. The resonant instability has also been investigated. We have found that when the phase velocity of the wave is close to the velocity of ion-stream the wave becomes unstable. However, the resonant growth rate is remarkably reduced by the effect of electron spin-current. The growth rate is also decreased by either the reduction of ion-stream velocity or the increase in quantum wavelength. Thus, the quantum effect in terms of the quantum wave number is found to suppress the resonant instability. It is also found that the increase in Fermi energy can reduce the growth rate of the resonant wave in the quantum plasma.

Analytical modeling of localized surface plasmon resonance in heterostructure copper sulfide nanocrystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caldwell, Andrew H.; Ha, Don-Hyung; Robinson, Richard D., E-mail: rdr82@cornell.edu

2014-10-28

Localized surface plasmon resonance (LSPR) in semiconductor nanocrystals is a relatively new field of investigation that promises greater tunability of plasmonic properties compared to metal nanoparticles. A novel process by which the LSPR in semiconductor nanocrystals can be altered is through heterostructure formation arising from solution-based cation exchange. Herein, we describe the development of an analytical model of LSPR in heterostructure copper sulfide-zinc sulfide nanocrystals synthesized via a cation exchange reaction between copper sulfide (Cu{sub 1.81}S) nanocrystals and Zn ions. The cation exchange reaction produces dual-interface, heterostructure nanocrystals in which the geometry of the copper sulfide phase can be tunedmore » from a sphere to a thin disk separating symmetrically-grown sulfide (ZnS) grains. Drude model electronic conduction and Mie-Gans theory are applied to describe how the LSPR wavelength changes during cation exchange, taking into account the morphology evolution and changes to the local permittivity. The results of the modeling indicate that the presence of the ZnS grains has a significant effect on the out-of-plane LSPR mode. By comparing the results of the model to previous studies on solid-solid phase transformations of copper sulfide in these nanocrystals during cation exchange, we show that the carrier concentration is independent of the copper vacancy concentration dictated by its atomic phase. The evolution of the effective carrier concentration calculated from the model suggests that the out-of-plane resonance mode is dominant. The classical model was compared to a simplified quantum mechanical model which suggested that quantum mechanical effects become significant when the characteristic size is less than ∼8 nm. Overall, we find that the analytical models are not accurate for these heterostructured semiconductor nanocrystals, indicating the need for new model development for this emerging field.« less

Architecture of Kepler's Multi-transiting Systems: II. New investigations with twice as many candidates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fabrycky, Daniel C.; Lissauer, Jack J.; Ragozzine, Darin

Having discovered 885 planet candidates in 361 multiple-planet systems, Kepler has made transits a powerful method for studying the statistics of planetary systems. The orbits of only two pairs of planets in these candidate systems are apparently unstable. This indicates that a high percentage of the candidate systems are truly planets orbiting the same star, motivating physical investigations of the population. Pairs of planets in this sample are typically not in orbital resonances. However, pairs with orbital period ratios within a few percent of a first-order resonance (e.g. 2:1, 3:2) prefer orbital spacings just wide of the resonance and avoidmore » spacings just narrow of the resonance. Finally, we investigate mutual inclinations based on transit duration ratios. We infer that the inner planets of pairs tend to have a smaller impact parameter than their outer companions, suggesting these planetary systems are typically coplanar to within a few degrees.« less

Optical design of nanowire absorbers for wavelength selective photodetectors

PubMed Central

Mokkapati, S.; Saxena, D.; Tan, H. H.; Jagadish, C.

2015-01-01

We propose the optical design for the absorptive element of photodetectors to achieve wavelength selective photo response based on resonant guided modes supported in semiconductor nanowires. We show that the waveguiding properties of nanowires result in very high absorption efficiency that can be exploited to reduce the volume of active semiconductor compared to planar photodetectors, without compromising the photocurrent. We present a design based on a group of nanowires with varying diameter for multi-color photodetectors with small footprint. We discuss the effect of a dielectric shell around the nanowires on the absorption efficiency and present a simple approach to optimize the nanowire diameter-dielectric shell thickness for maximizing the absorption efficiency. PMID:26469227

EPR and Ferromagnetism in Diluted Magnetic Semiconductor Quantum Wells

NASA Astrophysics Data System (ADS)

König, Jürgen; MacDonald, Allan H.

2003-08-01

Motivated by recent measurements of electron paramagnetic resonance spectra in modulation-doped CdMnTe quantum wells [

Passive Q-switching of ˜2.7 µm Er:Lu2O3 ceramic laser with a semiconductor saturable absorber mirror

NASA Astrophysics Data System (ADS)

Ren, Xiaojing; Shen, Deyuan; Zhang, Jian; Tang, Dingyuan

2018-02-01

We demonstrate the passively Q-switched operation of an Er:Lu2O3 ceramic laser at ˜2.7 µm for the first time, to the best of our knowledge. By using a semiconductor saturable absorber mirror (SESAM), stable pulse trains with a repetition rate of 20-33.3 kHz are produced in a compacted v-shaped resonator. The pulse duration (FWHM), pulse energy, and peak power are 660 ns, 1.8 µJ, and ˜2.73 W, respectively, at 33.3 kHz repetition rate. Prospects for further improvements in terms of laser performances are discussed.

Removal of GaAs growth substrates from II-VI semiconductor heterostructures

NASA Astrophysics Data System (ADS)

Bieker, S.; Hartmann, P. R.; Kießling, T.; Rüth, M.; Schumacher, C.; Gould, C.; Ossau, W.; Molenkamp, L. W.

2014-04-01

We report on a process that enables the removal of II-VI semiconductor epilayers from their GaAs growth substrate and their subsequent transfer to arbitrary host environments. The technique combines mechanical lapping and layer selective chemical wet etching and is generally applicable to any II-VI layer stack. We demonstrate the non-invasiveness of the method by transferring an all-II-VI magnetic resonant tunneling diode. High resolution x-ray diffraction proves that the crystal integrity of the heterostructure is preserved. Transport characterization confirms that the functionality of the device is maintained and even improved, which is ascribed to completely elastic strain relaxation of the tunnel barrier layer.

Electrically tunable infrared metamaterial devices

DOEpatents

Brener, Igal; Jun, Young Chul

2015-07-21

A wavelength-tunable, depletion-type infrared metamaterial optical device is provided. The device includes a thin, highly doped epilayer whose electrical permittivity can become negative at some infrared wavelengths. This highly-doped buried layer optically couples with a metamaterial layer. Changes in the transmission spectrum of the device can be induced via the electrical control of this optical coupling. An embodiment includes a contact layer of semiconductor material that is sufficiently doped for operation as a contact layer and that is effectively transparent to an operating range of infrared wavelengths, a thin, highly doped buried layer of epitaxially grown semiconductor material that overlies the contact layer, and a metallized layer overlying the buried layer and patterned as a resonant metamaterial.

Effect of the depolarization field on coherent optical properties in semiconductor quantum dots

NASA Astrophysics Data System (ADS)

Mitsumori, Yasuyoshi; Watanabe, Shunta; Asakura, Kenta; Seki, Keisuke; Edamatsu, Keiichi; Akahane, Kouichi; Yamamoto, Naokatsu

2018-06-01

We study the photon echo spectrum of self-assembled semiconductor quantum dots using femtosecond light pulses. The spectrum shape changes from a single-peaked to a double-peaked structure as the time delay between the two excitation pulses is increased. The spectrum change is reproduced by numerical calculations, which include the depolarization field induced by the biexciton-exciton transition as well as the conventional local-field effect for the exciton-ground-state transition in a quantum dot. Our findings suggest that various optical transitions in tightly localized systems generate a depolarization field, which renormalizes the resonant frequency with a change in the polarization itself, leading to unique optical properties.

Photomechanical vibration of thin crystals of polar semiconductors

NASA Technical Reports Server (NTRS)

Lagowski, J.; Gatos, H. C.

1974-01-01

It was found that thin crystals of polar (non-centrosymmetric) semiconductors constitute a new type of photosensitive system in which incident illumination is converted into mechanical energy: thus, illumination-induced elastic deformation (bending) was observed on thin (00.1) CdS and (111) GaAs crystals; furthermore, by employing chopped light the crystals were excited to their resonant vibration (photomechanical vibration); the dependence of the amplitude of this vibration on the energy of the incident radiation was found to be similar to the dependence of the surface photovoltage on the energy of the incident radiation (surface photovoltage spectrum). The present findings are consistent with a model based on light-induced modulation of the piezoelectric surface stresses.

EDITORIAL: (Nano)characterization of semiconductor materials and structures (Nano)characterization of semiconductor materials and structures

NASA Astrophysics Data System (ADS)

Bonanni, Alberta

2011-06-01

The latest impressive advancements in the epitaxial fabrication of semiconductors and in the refinement of characterization techniques have the potential to allow insight into the deep relation between materials' structural properties and their physical and chemical functionalities. Furthermore, while the comprehensive (nano)characterization of semiconductor materials and structures is becoming more and more necessary, a compendium of the currently available techniques is lacking. We are positive that an overview of the hurdles related to the specific methods, often leading to deceptive interpretations, will be most informative for the broad community working on semiconductors, and will help in shining some light onto a plethora of controversial reports found in the literature. From this perspective, with this special issue we address and highlight the challenges and misinterpretations related to complementary local (nanoscale) and more global experimental methods for the characterization of semiconductors. The six topical reviews and the three invited papers by leading experts in the specific fields collected in here are intended to provide the required broad overview on the possibilities of actual (nano)characterization methods, from the microscopy of single quantum structures, over the synchrotron-based absorption and diffraction of nano-objects, to the contentious detection of tiny magnetic signals by quantum interference and resonance techniques. We are grateful to all the authors for their valuable contributions. Moreover, I would like to thank the Editorial Board of the journal for supporting the realization of this special issue and for inviting me to serve as Guest Editor. We greatly appreciate the work of the reviewers, of the editorial staff of Semiconductor Science and Technology and of IOP Publishing. In particular, the efforts of Alice Malhador in coordinating this special issue are acknowledged.

Dual emissions from MnS clusters confined in the sodalite nanocage of a chalcogenide-based semiconductor zeolite.

PubMed

Hu, Dandan; Zhang, Yingying; Lin, Jian; Hou, Yike; Li, Dongsheng; Wu, Tao

2017-03-21

A new host-guest hybrid system with MnS clusters confined in a chalcogenide-based semiconductor zeolite was for the first time constructed and its photoluminescence (PL) properties were also investigated. The existence of MnS clusters in the nanopores of the semiconductor zeolite was revealed by UV-Vis absorption spectroscopy, steady-state fluorescence analysis, Raman as well as Fourier transform infrared (FTIR) spectroscopy. The aggregation state of the entrapped MnS clusters at different measurement temperatures was probed by electron paramagnetic resonance (EPR) spectroscopy. Of significant importance is the fact that the entrapped MnS clusters displayed dual emissions at 518 nm (2.39 eV) and 746 nm (1.66 eV), respectively, and the long-wavelength emission has never been observed in other MnS-confined host-guest systems. These two emission peaks displayed tunable PL intensity affected by the loading level and measurement temperature. This can be explained by the different morphologies of MnS clusters with different aggregation states at the corresponding loading level or measurement temperature. The current study opens a new avenue to construct inorganic chalcogenide cluster involved host-guest systems with a semiconductor zeolite as the host matrix.

Differential-Mode Biosensor Using Dual Extended-Gate Metal-Oxide-Semiconductor Field-Effect Transistors

NASA Astrophysics Data System (ADS)

Choi, Jinhyeon; Lee, Hee Ho; Ahn, Jungil; Seo, Sang-Ho; Shin, Jang-Kyoo

2012-06-01

In this paper, we present a differential-mode biosensor using dual extended-gate metal-oxide-semiconductor field-effect transistors (MOSFETs), which possesses the advantages of both the extended-gate structure and the differential-mode operation. The extended-gate MOSFET was fabricated using a 0.6 µm standard complementary metal oxide semiconductor (CMOS) process. The Au extended gate is the sensing gate on which biomolecules are immobilized, while the Pt extended gate is the dummy gate for use in the differential-mode detection circuit. The differential-mode operation offers many advantages such as insensitivity to the variation of temperature and light, as well as low noise. The outputs were measured using a semiconductor parameter analyzer in a phosphate buffered saline (PBS; pH 7.4) solution. A standard Ag/AgCl reference electrode was used to apply the gate bias. We measured the variation of output voltage with time, temperature, and light intensity. The bindings of self-assembled monolayer (SAM), streptavidin, and biotin caused a variation in the output voltage of the differential-mode detection circuit and this was confirmed by surface plasmon resonance (SPR) experiment. Biotin molecules could be detected up to a concentration of as low as 0.001 µg/ml.

Spin cat state generation for quadrupolar nuclei in semiconductor quantum dots or defect centers

NASA Astrophysics Data System (ADS)

Bulutay, Ceyhun

Implementing spin-based quantum information encoding schemes in semiconductors has a high priority. The so-called cat codes offer a paradigm that enables hardware-efficient error correction. Their inauguration to semiconductor-based nuclear magnetic resonance framework hinges upon the realization of coherent spin states (CSS). In this work, we show how the crucial superpositions of CSS can be generated for the nuclear spins. This is through the intrinsic electric quadrupole interaction involving a critical role by the biaxiality term that is readily available, as in strained heterostructures of semiconductors, or defect centers having nearby quadrupolar spins. The persistence of the cat states is achieved using a rotation pulse so as to harness the underlying fixed points of the classical Hamiltonian. We classify the two distinct types as polar- and equator-bound over the Bloch sphere with respect to principal axes. Their optimal performance as well as sensitivity under numerous parameter deviations are analyzed. Finally, we present how these modulo-2 cat states can be extended to modulo-4 by a three-pulse scheme. This work was supported by TUBITAK, The Scientific and Technological Research Council of Turkey through the project No. 114F409.

Shape anisotropy in patterned ferromagnetic GaMnAsP films with perpendicular anisotropy

NASA Astrophysics Data System (ADS)

Liu, X.; Li, X.; Dong, S.-N.; Dobrowolska, M.; Furdyna, J. K.

2018-05-01

We investigate the effects of physical dimensions on the behavior of magnetic anisotropy in lithographically-fabricated nanoscale squares of the ferromagnetic semiconductor GaMnAsP using SQUID magnetometry and ferromagnetic resonance (FMR). Both measurements show that perpendicular magnetic anisotropy is strongly affected by the size of the ferromagnetic nano-scale elements, while their Curie temperature and their in-plane anisotropy remain unchanged in the range studied. In addition to uniform-mode FMR, we observe a series of spin-wave resonances, whose analysis suggests that surface anisotropy plays an important role in determining the properties of nanoscale magnets.

Probing semiconductor gap states with resonant tunneling.

PubMed

Loth, S; Wenderoth, M; Winking, L; Ulbrich, R G; Malzer, S; Döhler, G H

2006-02-17

Tunneling transport through the depletion layer under a GaAs {110} surface is studied with a low temperature scanning tunneling microscope (STM). The observed negative differential conductivity is due to a resonant enhancement of the tunneling probability through the depletion layer mediated by individual shallow acceptors. The STM experiment probes, for appropriate bias voltages, evanescent states in the GaAs band gap. Energetically and spatially resolved spectra show that the pronounced anisotropic contrast pattern of shallow acceptors occurs exclusively for this specific transport channel. Our findings suggest that the complex band structure causes the observed anisotropies connected with the zinc blende symmetry.

Time-domain measurement of terahertz frequency magnetoplasmon resonances in a two-dimensional electron system by the direct injection of picosecond pulsed currents

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Jingbo; Mayorov, Alexander S.; Wood, Christopher D.

2016-02-29

We have investigated terahertz (THz) frequency magnetoplasmon resonances in a two-dimensional electron system through the direct injection of picosecond duration current pulses. The evolution of the time-domain signals was measured as a function of magnetic field, and the results were found to be in agreement with calculations using a mode-matching approach for four modes observed in the frequency range above 0.1 THz. This introduces a generic technique suitable for sampling ultrafast carrier dynamics in low-dimensional semiconductor nanostructures at THz frequencies.

INTERACTION OF LASER RADIATION WITH MATTER: Influence of a target on operation of a pulsed CO2 laser emitting microsecond pulses

NASA Astrophysics Data System (ADS)

Baranov, V. Yu; Dolgov, V. A.; Malyuta, D. D.; Mezhevov, V. S.; Semak, V. V.

1987-12-01

The profile of pulses emitted by a TEA CO2 laser with an unstable resonator changed as a result of interaction of laser radiation with the surface of a metal in the presence of a breakdown plasma. This influence of a target on laser operation and its possible applications in laser processing of materials are analyzed.

Numerical solution of the exact cavity equations of motion for an unstable optical resonator.

PubMed

Bowers, M S; Moody, S E

1990-09-20

We solve numerically, we believe for the first time, the exact cavity equations of motion for a realistic unstable resonator with a simple gain saturation model. The cavity equations of motion, first formulated by Siegman ["Exact Cavity Equations for Lasers with Large Output Coupling," Appl. Phys. Lett. 36, 412-414 (1980)], and which we term the dynamic coupled modes (DCM) method of solution, solve for the full 3-D time dependent electric field inside the optical cavity by expanding the field in terms of the actual diffractive transverse eigenmodes of the bare (gain free) cavity with time varying coefficients. The spatially varying gain serves to couple the bare cavity transverse modes and to scatter power from mode to mode. We show that the DCM method numerically converges with respect to the number of eigenmodes in the basis set. The intracavity intensity in the numerical example shown reaches a steady state, and this steady state distribution is compared with that computed from the traditional Fox and Li approach using a fast Fourier transform propagation algorithm. The output wavefronts from both methods are quite similar, and the computed output powers agree to within 10%. The usefulness and advantages of using this method for predicting the output of a laser, especially pulsed lasers used for coherent detection, are discussed.

Recent development of the passive vibration control method

NASA Astrophysics Data System (ADS)

Ishida, Yukio

2012-05-01

This paper introduces new passive vibration suppression methods developed recently in our laboratory. First, two methods used to suppress steady-state resonances are explained. One is the improvement of the efficiency of a ball balancer. A simple method to eliminate the influence of friction of balls and to improve its efficiency is introduced. The other is an effective method that utilizes the discontinuous spring characteristics. Secondly, a method to eliminate unstable ranges in rotor systems is explained. Unstable ranges in an asymmetrical shaft, and in a hollow rotor partially filled with liquid, are eliminated by the discontinuous spring characteristics. Thirdly, a method to suppress self-excited oscillations is explained. Self-excited oscillations due to internal damping and rubbing are discussed. Finally, the methods of using a pendulum or roller type absorbers to suppress torsional vibrations are explained.

Resonant tunnelling in a quantum oxide superlattice

DOE PAGES

Choi, Woo Seok; Lee, Sang A.; You, Jeong Ho; ...

2015-06-24

Resonant tunneling is a quantum mechanical process that has long been attracting both scientific and technological attention owing to its intriguing underlying physics and unique applications for high-speed electronics. The materials system exhibiting resonant tunneling, however, has been largely limited to the conventional semiconductors, partially due to their excellent crystalline quality. Here we show that a deliberately designed transition metal oxide superlattice exhibits a resonant tunneling behaviour with a clear negative differential resistance. The tunneling occurred through an atomically thin, lanthanum δ- doped SrTiO 3 layer, and the negative differential resistance was realized on top of the bi-polar resistance switchingmore » typically observed for perovskite oxide junctions. This combined process resulted in an extremely large resistance ratio (~10 5) between the high and low resistance states. Lastly, the unprecedentedly large control found in atomically thin δ-doped oxide superlattices can open a door to novel oxide-based high-frequency logic devices.« less

Electron spin resonance study of CuGa1-xMnxSe2 magnetic semiconducting compounds

NASA Astrophysics Data System (ADS)

Fermin, José R.; Nava, Alexander; Durante-Rincón, C. A.; Castro, Jaime; Silva, Pedro J.

2013-02-01

We report on the magnetic properties of the diluted magnetic semiconductor CuGa1-xMnxSe2. For this, Electron spin resonance (ESR) experiments in the temperature range 70 K

Room-temperature Synthesis of Amorphous Molybdenum Oxide Nanodots with Tunable Localized Surface Plasmon Resonances.

PubMed

Zhu, Chuanhui; Xu, Qun; Ji, Liang; Ren, Yumei; Fang, Mingming

2017-12-05

Two-dimensional (2D) semiconductors have recently emerged as a remarkable class of plasmonic alternative to conventional noble metals. However, tuning of their plasmonic resonances towards different wavelengths in the visible-light region with physical or chemical methods still remains challenging. In this work, we design a simple room-temperature chemical reaction route to synthesize amorphous molybdenum oxide (MoO 3-x ) nanodots that exhibit strong localized surface plasmon resonances (LSPR) in the visible and near-infrared region. Moreover, tunable plasmon resonances can be achieved in a wide range with the changing surrounding solvent, and accordingly the photoelectrocatalytic activity can be optimized with the varying LSPR peaks. This work boosts the light-matter interaction at the nanoscale and could enable photodetectors, sensors, and photovoltaic devices in the future. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Enhancement of Spin-transfer torque switching via resonant tunneling

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chatterji, Niladri; Tulapurkar, Ashwin A.; Muralidharan, Bhaskaran

We propose the use of resonant tunneling as a route to enhance the spin-transfer torque switching characteristics of magnetic tunnel junctions. The proposed device structure is a resonant tunneling magnetic tunnel junction based on a MgO-semiconductor heterostructure sandwiched between a fixed magnet and a free magnet. Using the non-equilibrium Green's function formalism coupled self consistently with the Landau-Lifshitz-Gilbert-Slonczewski equation, we demonstrate enhanced tunnel magneto-resistance characteristics as well as lower switching voltages in comparison with traditional trilayer devices. Two device designs based on MgO based heterostructures are presented, where the physics of resonant tunneling leads to an enhanced spin transfer torquemore » thereby reducing the critical switching voltage by up to 44%. It is envisioned that the proof-of-concept presented here may lead to practical device designs via rigorous materials and interface studies.« less

Dynamic generation of spin-wave currents in hybrid structures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lyapilin, I. I.; Okorokov, M. S., E-mail: Okorokovmike@gmail.com

2016-11-15

Spin transport through the interface in a semiconductor/ferromagnetic insulator hybrid structure is studied by the nonequilibrium statistical operator method under conditions of the spin Seebeck effect. The effective parameter approach in which each examined subsystem (conduction electrons, magnons, phonons) is characterized by its specific effective temperature is considered. The effect of the resonant (electric dipole) excitation of the spin electronic subsystem of conduction electrons on spin-wave current excitation in a ferromagnetic insulator is considered. The macroscopic equations describing the spin-wave current caused by both resonant excitation of the spin system of conduction electrons and the presence of a nonuniform temperaturemore » field in the ferromagnetic insulator are derived taking into account both the resonance-diffusion propagation of magnons and their relaxation processes. It is shown that spin-wave current excitation is also of resonant nature under the given conditions.« less

Active tuning of surface phonon polariton resonances via carrier photoinjection

NASA Astrophysics Data System (ADS)

Dunkelberger, Adam D.; Ellis, Chase T.; Ratchford, Daniel C.; Giles, Alexander J.; Kim, Mijin; Kim, Chul Soo; Spann, Bryan T.; Vurgaftman, Igor; Tischler, Joseph G.; Long, James P.; Glembocki, Orest J.; Owrutsky, Jeffrey C.; Caldwell, Joshua D.

2018-01-01

Surface phonon polaritons (SPhPs) are attractive alternatives to infrared plasmonics for subdiffractional confinement of infrared light. Localized SPhP resonances in semiconductor nanoresonators are narrow, but that linewidth and the limited extent of the Reststrahlen band limit spectral coverage. To address this limitation, we report active tuning of SPhP resonances in InP and 4H-SiC by photoinjecting free carriers into nanoresonators, taking advantage of the coupling between the carrier plasma and optic phonons to blueshift SPhP resonances. We demonstrate state-of-the-art tuning figures of merit upon continuous-wave excitation (in InP) or pulsed excitation (in 4H-SiC). Lifetime effects cause the tuning to saturate in InP, and carrier redistribution leads to rapid (<50 ps) recovery of the resonance in 4H-SiC. This work demonstrates the potential for this method and opens a path towards actively tuned nanophotonic devices, such as modulators and beacons, in the infrared, and identifies important implications of coupling between electronic and phononic excitations.

Up-scalable low-cost fabrication of plasmonic and photonic nanostructures for sensing

NASA Astrophysics Data System (ADS)

Gallinet, Benjamin; Davoine, Laurent; Basset, Guillaume; Schnieper, Marc

2013-09-01

The fabrication by nanoimprint lithography of large-area plasmonic and photonic sensing platforms is reported. The plasmonic nanostructures have the shape of split-ring resonators and support both electric dipole and quadrupole modes. They carry the spectral signature of Fano resonances. Their near-field and far-field optical properties are investigated with an analytical model together with numerical calculations. Fano-resonant systems combine strong nanoscale light confinement with a narrow spectral line width, which makes them very promising for biochemical sensing and immunoassays. On the other hand, chemical sensors based on resonant gratings are obtained by patterning a sol-gel material, evaporating a high refractive index semiconductor and coating with a chemically sensitive dye layer. By exposition to a liquid or an invisible gas such as ammonium, the change in absorption is detected optically. An analytical model is introduced to explain the enhancement of the signal by the resonant grating, which can be detected with the naked eye from a color change of the reflected light.

Photon-Assisted Resonant Tunneling and 2-D Plasmon Modes in Double Quantum Wells in Intense Terahertz Electric Fields

NASA Astrophysics Data System (ADS)

Peralta, X. G.; Allen, S. J.; Lin, S. Y.; Simmons, J. A.; Blount, M. A.; Baca, W. E.

1998-03-01

We explore photon-assisted resonant tunneling in double quantum well systems in intense terahertz electric fields that have separately- contacted wells. We have two goals in mind: 1) increase the basic understanding of photon assisted tunneling in semiconductors and 2) assess the potential of this structure as a detector. We can control the tunneling current by varying the electron density of each 2D electron gas or by changing the relative separation of the Fermi levels. This allows us to prepare the system in such a way that photons of the appropriate energy may induce resonant tunneling, which is monitored by a change in conductance. We also examine the possible enhancement of the resonant tunneling by resonant excitations of acoustic plasmon modes. This work is supported by ONR, the U. S. Dept. of Energy under Contract DE-AC04-94AL85000 and Consejo Nacional de Ciencia y Tecnología, México.

Modification of quantum dots with nucleic acids

NASA Astrophysics Data System (ADS)

Kocherginskaya, P. B.; Romanova, A. V.; Prokhorenko, I. A.; Itkis, Daniil M.; Korshun, V. A.; Goodilin, Eugene A.; Tretyakov, Yuri D.

2011-12-01

The key principles and modern approaches to targeted modification of semiconductor colloidal nanoparticles, quantum dots, which exhibit unique photophysical properties and are a promising class of luminescent markers, are discussed. Attention is given to the preparation of their bioconjugates with nucleic acids, promising tools for biological microchips and resonance energy transfer sensors. The bibliography includes 80 references.

Investigation of Transmission Resonances with Specific Properties in Rectangular Semiconductor Quantum Wells

ERIC Educational Resources Information Center

Niketic, Nemanja; Milanovic, Vitomir; Radovanovic, Jelena

2012-01-01

In this paper we provide a detailed analysis of the energy position and type of transmission maxima in rectangular quantum wells (QWs), taking into consideration the difference of electron effective masses in the barrier and well layers. Particular attention is given to transmission maxima that are less than unity and the implications of effective…

CONDITIONS OF PASSAGE AND ENTRAPMENT OF TERRESTRIAL PLANETS IN SPIN-ORBIT RESONANCES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Makarov, Valeri V., E-mail: vvm@usno.navy.mil

The dynamical evolution of terrestrial planets resembling Mercury in the vicinity of spin-orbit resonances is investigated using comprehensive harmonic expansions of the tidal torque taking into account the frequency-dependent quality factors and Love numbers. The torque equations are integrated numerically with a small step in time, including the oscillating triaxial torque components but neglecting the layered structure of the planet and assuming a zero obliquity. We find that a Mercury-like planet with a current value of orbital eccentricity (0.2056) is always captured in 3:2 resonance. The probability of capture in the higher 2:1 resonance is approximately 0.23. These results aremore » confirmed by a semi-analytical estimation of capture probabilities as functions of eccentricity for both prograde and retrograde evolutions of spin rate. As follows from analysis of equilibrium torques, entrapment in 3:2 resonance is inevitable at eccentricities between 0.2 and 0.41. Considering the phase space parameters at the times of periastron, the range of spin rates and phase angles for which an immediate resonance passage is triggered is very narrow, and yet a planet like Mercury rarely fails to align itself into this state of unstable equilibrium before it traverses 2:1 resonance.« less

Effect of charging on silicene with alkali metal atom adsorption

NASA Astrophysics Data System (ADS)

Li, Manman; Li, Zhongyao; Gong, Shi-Jing

2018-02-01

Based on first-principles calculations, we studied the effects of charging on the structure, binding energy and electronic properties of silicene with alkali metal (AM) atom (Li, Na or K) adsorption. In AMSi2, electron doping enlarges the lattice constant of silicene, while the influence of hole doping is non-monotonic. In AMSi8, the lattice constant increases/decreases almost linearly with the increase in electron/hole doping. In addition, the AM-Si vertical distance can be greatly enlarged by excessive hole doping in both AMSi2 and AMSi8 systems. When the hole doping is as large as  +e per unit cell, both AMSi2 and AMSi8 can be transformed from metal to semiconductor. However, the binding energy would be negative in the AM+ Si2 semiconductor. It suggests AM+ Si2 is unstable in this case. In addition, the electron doping and the AM-Si vertical distance would greatly influence the band gap of silicene in LiSi8 and NaSi8, while the band gap in KSi8 is relatively stable. Therefore, KSi8 may be a more practicable material in nanotechnology.

Broadband infrared absorption enhancement by electroless-deposited silver nanoparticles

NASA Astrophysics Data System (ADS)

Gritti, Claudia; Raza, Søren; Kadkhodazadeh, Shima; Kardynal, Beata; Malureanu, Radu; Mortensen, N. Asger; Lavrinenko, Andrei V.

2017-01-01

Decorating semiconductor surfaces with plasmonic nanoparticles (NPs) is considered a viable solution for enhancing the absorptive properties of photovoltaic and photodetecting devices. We propose to deposit silver NPs on top of a semiconductor wafer by a cheap and fast electroless plating technique. Optical characterization confirms that the random array of electroless-deposited NPs improves absorption by up to 20% in a broadband of near-infrared frequencies from the bandgap edge to 2000 nm. Due to the small filling fraction of particles, the reflection in the visible range is practically unchanged, which points to the possible applications of such deposition method for harvesting photons in nanophotonics and photovoltaics. The broadband absorption is a consequence of the resonant behavior of particles with different shapes and sizes, which strongly localize the incident light at the interface of a high-index semiconductor substrate. Our hypothesis is substantiated by examining the plasmonic response of the electroless-deposited NPs using both electron energy loss spectroscopy and numerical calculations.

Calculation of Expectation Values of Operators in the Complex Scaling Method

DOE PAGES

Papadimitriou, G.

2016-06-14

In the complex scaling method (CSM) provides with a way to obtain resonance parameters of particle unstable states by rotating the coordinates and momenta of the original Hamiltonian. It is convenient to use an L 2 integrable basis to resolve the complex rotated or complex scaled Hamiltonian H θ , with θ being the angle of rotation in the complex energy plane. Within the CSM, resonance and scattering solutions have fall-off asymptotics. Furthermore, one of the consequences is that, expectation values of operators in a resonance or scattering complex scaled solution are calculated by complex rotating the operators. In thismore » work we are exploring applications of the CSM on calculations of expectation values of quantum mechanical operators by using the regularized backrotation technique and calculating hence the expectation value using the unrotated operator. Moreover, the test cases involve a schematic two-body Gaussian model and also applications using realistic interactions.« less

Influence of resonator length on catastrophic optical damage in high-power AlGaInP broad-area lasers

NASA Astrophysics Data System (ADS)

Bou Sanayeh, Marwan

2017-05-01

The increasing importance of extracting high optical power out of semiconductor lasers motivated several studies in catastrophic optical damage (COD) level improvement. In this study, the influence of the resonator length in high-power broad-area (BA) AlGaInP lasers on COD is presented. For the analyses, several 638 nm AlGaInP 60 μm BA lasers from the same wafer were used. Resonator lengths of 900, 1200, 1500, and 1800 μm were compared. In order to independently examine the effect of the resonator length on the maximum power reached by the lasers before COD (PCOD), the lasers used are uncoated and unmounted, and PCOD under pulsed mode was determined. It was found that higher output powers and eventually higher PCOD can be achieved using longer resonators; however, it was also found that this is mainly useful when working at high output powers far away from the laser threshold, since the threshold current and slope efficiency worsen when the resonator length increases.

Microsacle PolySilicon Hemispherical Shell Resonating Gyroscopes with Integrated Three-dimensional Curved Electrodes

NASA Astrophysics Data System (ADS)

Zhuang, Xuye; Chen, Binggen; Wang, Xinlong; Yu, Lei; Wang, Fan; Guo, Shuwen

2018-03-01

A novel approach for fabrication of polysilicon hemispherical resonator gyroscopes with integrated 3-D curved electrodes is developed and experimentally demonstrated. The 3-D polysilicon electrodes are integrated as a part of the hemispherical shell resonator’s fabrication process, and no extra assembly process are needed, ensuring the symmetry of the shell resonator. The fabrication process and materials used are compatible with the traditional semiconductor process, indicating the gyroscope has a high potential for mass production and commercial development. Without any trimming or tuning of the n=2 wineglass frequencies, a 28 kHz shell resonator demonstrates a 0.009% frequency mismatch between two degenerate wineglass modes, and a 13.6 kHz resonator shows a frequency split of 0.03%. The ring-down time of a fabricated resonator is 0.51 s, corresponding to a Q of 22000, at 0.01 Pa vacuum and room temperature. The prototype of the gyroscope is experimentally analyzed, and the scale factor of the gyro is 1.15 mV/°/s, the bias instability is 80 °/h.

Tutorial: Integrated-photonic switching structures

NASA Astrophysics Data System (ADS)

Soref, Richard

2018-02-01

Recent developments in waveguided 2 × 2 and N × M photonic switches are reviewed, including both broadband and narrowband resonant devices for the Si, InP, and AlN platforms. Practical actuation of switches by electro-optical and thermo-optical techniques is discussed. Present datacom-and-computing applications are reviewed, and potential applications are proposed for chip-scale photonic and optoelectronic integrated switching networks. Potential is found in the reconfigurable, programmable "mesh" switches that enable a promising group of applications in new areas beyond those in data centers and cloud servers. Many important matrix switches use gated semiconductor optical amplifiers. The family of broadband, directional-coupler 2 × 2 switches featuring two or three side-coupled waveguides deserves future experimentation, including devices that employ phase-change materials. The newer 2 × 2 resonant switches include standing-wave resonators, different from the micro-ring traveling-wave resonators. The resonant devices comprise nanobeam interferometers, complex-Bragg interferometers, and asymmetric contra-directional couplers. Although the fast, resonant devices offer ultralow switching energy, ˜1 fJ/bit, they have limitations. They require several trade-offs when deployed, but they do have practical application.

Towards Violation of Classical Inequalities using Quantum Dot Resonance Fluorescence

NASA Astrophysics Data System (ADS)

Peiris, Manoj

Self-assembled semiconductor quantum dots have attracted considerable interest recently, ranging from fundamental studies of quantum optics to advanced applications in the field of quantum information science. With their atom-like properties, quantum dot based nanophotonic devices may also substantially contribute to the development of quantum computers. This work presents experimental progress towards the understanding of light-matter interactions that occur beyond well-understood monochromatic resonant light scattering processes in semiconductor quantum dots. First, we report measurements of resonance fluorescence under bichromatic laser excitation. With the inclusion of a second laser, both first-order and second-order correlation functions are substantially altered. Under these conditions, the scattered light exhibits a rich spectrum containing many spectral features that lead to a range of nonlinear multiphoton dynamics. These observations are discussed and compared with a theoretical model. Second, we investigated the light scattered by a quantum dot in the presence of spectral filtering. By scanning the tunable filters placed in front of each detector of a Hanbury-Brown and Twiss setup and recording coincidence measurements, a \\two-photon spectrum" has been experimentally reconstructed for the first time. The two-photon spectrum contains a wealth of information about the cascaded emission involved in the scattering process, such as transitions occurring via virtual intermediate states. Our measurements also reveal that the scattered frequency-filtered light from a quantum dot violates the Cauchy-Schwarz inequality. Finally, Franson-interferometry has been performed using spectrally filtered light from quantum dot resonance fluorescence. Visibilities exceeding the classical limit were demonstrated by using a pair of folded Mach-Zehnder interferometers, paving the way for producing single time-energy entangled photon pairs that could violate Bell's inequalities.

Multi-resonance frequency spin dependent charge pumping and spin dependent recombination - applied to the 4H-SiC/SiO2 interface

NASA Astrophysics Data System (ADS)

Anders, M. A.; Lenahan, P. M.; Lelis, A. J.

2017-12-01

We report on a new electrically detected magnetic resonance (EDMR) approach involving spin dependent charge pumping (SDCP) and spin dependent recombination (SDR) at high (K band, about 16 GHz) and ultra-low (360 and 85 MHz) magnetic resonance frequencies to investigate the dielectric/semiconductor interface in 4H-SiC metal-oxide-semiconductor field-effect transistors (MOSFETs). A comparison of SDCP and SDR allows for a comparison of deep level defects and defects with energy levels throughout most of the bandgap. Additionally, a comparison of high frequency and ultra-low frequency measurements allows for (1) the partial separation of spin-orbit coupling and hyperfine effects on magnetic resonance spectra, (2) the observation of otherwise forbidden half-field effects, which make EDMR, at least, in principle, quantitative, and (3) the observation of Breit-Rabi shifts in superhyperfine measurements. (Observation of the Breit-Rabi shift helps in both the assignment and the measurement of superhyperfine parameters.) We find that, as earlier work also indicates, the SiC silicon vacancy is the dominating defect in n-MOSFETs with as-grown oxides and that post-oxidation NO anneals significantly reduce their population. In addition, we provide strong evidence that NO anneals result in the presence of nitrogen very close to a large fraction of the silicon vacancies. The results indicate that the presence of nearby nitrogen significantly shifts the silicon vacancy energy levels. Our results also show that the introduction of nitrogen introduces a disorder at the interface. This nitrogen induced disorder may provide at least a partial explanation for the relatively modest improvement in mobility after the NO anneals. Finally, we compare the charge pumping and SDCP response as a function of gate amplitude and charge pumping frequency.

Indium phosphide-based monolithically integrated PIN waveguide photodiode readout for resonant cantilever sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siwak, N. P.; Laboratory for the Physical Sciences, 8050 Greenmead Drive, College Park, Maryland 20740; Fan, X. Z.

2014-10-06

An integrated photodiode displacement readout scheme for a microelectromechanical cantilever waveguide resonator sensing platform is presented. III-V semiconductors are used to enable the monolithic integration of passive waveguides with active optical components. This work builds upon previously demonstrated results by measuring the displacement of cantilever waveguide resonators with on-chip waveguide PIN photodiodes. The on-chip integration of the readout provides an additional 70% improvement in mass sensitivity compared to off-chip photodetector designs due to measurement stability and minimized coupling loss. In addition to increased measurement stability, reduced packaging complexity is achieved due to the simplicity of the readout design. We havemore » fabricated cantilever waveguides with integrated photodetectors and experimentally characterized these cantilever sensors with monolithically integrated PIN photodiodes.« less

Intervalley double resonance processes in MoS2

NASA Astrophysics Data System (ADS)

Wang, Yuanxi; Carvalho, Bruno; Malard, Leandro; Fantini, Cristiano; Crespi, Vincent; Pimenta, Marcos

Intervalley scattering plays a significant role in electronic energy dissipation in semiconductors. We investigate the intervalley scattering of monolayer and few-layer MoS2, by combining density functional theory calculations and resonant Raman spectroscopy probed by up to 20 laser excitation energies. We observe that two Raman peaks within 420-460 cm-1 are dispersive over a small range of laser energy, a clear signature of second-order processes involving intervalley scattering. Both modes involve LA and TA phonons at or near the K point. A third Raman peak at 466 cm-1 shows a strong intensity dependence on the layer number and is assigned 2LA(M). Our results invalidate previous Raman peak assignment proposals and open up a better understanding of double resonance processes in transition metal dichalcogenides.

Fully reflective deep ultraviolet to near infrared spectrometer and entrance optics for resonance Raman spectroscopy

NASA Astrophysics Data System (ADS)

Schulz, B.; Bäckström, J.; Budelmann, D.; Maeser, R.; Rübhausen, M.; Klein, M. V.; Schoeffel, E.; Mihill, A.; Yoon, S.

2005-07-01

We present the design and performance of a new triple-grating deep ultraviolet to near-infrared spectrometer. The system is fully achromatic due to the use of reflective optics. The minimization of image aberrations by using on- and off- axis parabolic mirrors as well as elliptical mirrors yields a strong stray light rejection with high resolution over a wavelength range between 165 and 1000nm. The Raman signal is collected with a reflective entrance objective with a numerical aperture of 0.5, featuring a Cassegrain-type design. Resonance Raman studies on semiconductors and on correlated compounds, such as LaMnO3, highlight the performance of this instrument, and show diverse resonance effects between 1.96 and 5.4eV.

Disorder-induced transitions in resonantly driven Floquet topological insulators

NASA Astrophysics Data System (ADS)

Titum, Paraj; Lindner, Netanel H.; Refael, Gil

2017-08-01

We investigate the effects of disorder in Floquet topological insulators (FTIs) occurring in semiconductor quantum wells. Such FTIs are induced by resonantly driving a transition between the valence and conduction bands. We show that when disorder is added, the topological nature of such FTIs persists as long as there is a mobility gap at the resonant quasienergy. For strong enough disorder, this gap closes and all the states become localized as the system undergoes a transition to a trivial insulator. Interestingly, the effects of disorder are not necessarily adverse: we show that in the same quantum well, disorder can also induce a transition from a trivial to a topological system, thereby establishing a Floquet topological Anderson insulator (FTAI). We identify the conditions on the driving field necessary for observing such a transition.

The dynamical conductance of graphene tunnelling structures.

PubMed

Zhang, Huan; Chan, K S; Lin, Zijing

2011-12-16

The dynamical conductances of graphene tunnelling structures were numerically calculated using the scattering matrix method with the interaction effect included in a phenomenological approach. The overall single-barrier dynamical conductance is capacitative. Transmission resonances in the single-barrier structure lead to dips in the capacitative imaginary part of the response. This is different from the ac responses of typical semiconductor nanostructures, where transmission resonances usually lead to inductive peaks. The features of the dips depend on the Fermi energy. When the Fermi energy is below half of the barrier height, the dips are sharper. When the Fermi energy is higher than half of the barrier height, the dips are broader. Inductive behaviours can be observed in a double-barrier structure due to the resonances formed by reflection between the two barriers.

Electrical Manipulation of Donor Spin Qubits in Silicon and Germanium

NASA Astrophysics Data System (ADS)

Sigillito, Anthony James

Many proposals for quantum information devices rely on electronic or nuclear spins in semiconductors because of their long coherence times and compatibility with industrial fabrication processes. One of the most notable qubits is the electron spin bound to phosphorus donors in silicon, which offers coherence times exceeding seconds at low temperatures. These donors are naturally isolated from their environments to the extent that silicon has been coined a "semiconductor vacuum". While this makes for ultra-coherent qubits, it is difficult to couple two remote donors so quantum information proposals rely on high density arrays of qubits. Here, single qubit addressability becomes an issue. Ideally one would address individual qubits using electric fields which can be easily confined. Typically these schemes rely on tuning a donor spin qubit onto and off of resonance with a magnetic driving field. In this thesis, we measure the electrical tunability of phosphorus donors in silicon and use the extracted parameters to estimate the effects of electric-field noise on qubit coherence times. Our measurements show that donor ionization may set in before electron spins can be sufficiently tuned. We therefore explore two alternative options for qubit addressability. First, we demonstrate that nuclear spin qubits can be directly driven using electric fields instead of magnetic fields and show that this approach offers several advantages over magnetically driven spin resonance. In particular, spin transitions can occur at half the spin resonance frequency and double quantum transitions (magnetic-dipole forbidden) can occur. In a second approach to realizing tunable qubits in semiconductors, we explore the option of replacing silicon with germanium. We first measure the coherence and relaxation times for shallow donor spin qubits in natural and isotopically enriched germanium. We find that in isotopically enriched material, coherence times can exceed 1 ms and are limited by a single-phonon T1 process. At lower frequencies or lower temperatures the qubit coherence times should substantially increase. Finally, we measure the electric field tunability of donors in germanium and find a four order-of-magnitude enhancement in the spin-orbit Stark shift and confirm that the donors should be tunable by at least 4 times the electron spin ensemble linewidth (in isotopically enriched material). Germanium should therefore also be more sensitive to electrically driven nuclear magnetic resonance. Based on these results germanium is a promising alternative to silicon for spin qubits.

Light Collection Efficiency in Thin Strip Plastic Scintillator for the Study of ISGMR in Unstable Nuclei

NASA Astrophysics Data System (ADS)

Shafer, Jacob

2011-10-01

The compressibility of nuclear matter (KA) is one of the constituent of the equation of state for nuclear matter which is important in the study Neutron Stars and Super Novae. The KA is proportional to the Giant Monopole Resonance (GMR) energy and is related by the equation EGMR = (h2/mr2) 1/2 *(AKA)1/2 , where ``m'' is the mass of a nucleon and ``r'' is the radius of the nucleus. The GMR in unstable nuclei is important because the KA is related to the ratio of protons to neutrons. For this reason, it is desirable to study unstable nuclei as well as stable nuclei. The study of the GMR in unstable nuclei will be done using inverse kinematics on a target of Lithium (6Li). A detector composed of two layers of thin strip scintillators and one layer of large block scintillators has been designed and constructed to give adequate energy and angular distribution over a large portion of the solid angle where decay particles from the ISGMR can be found. Attenuation of the light signal in the strip scintillators was measured using an Americium (241Am) alpha source. Gains in light collection efficiency due to various wrapping techniques were also measured. The thin strip scintillators are connected to the photomultiplier tube (PMT) via bundles of optical fiber. Losses in light calculation efficiency due to fiber bundles were measured as well. Funded by DOE and NSF-REU.

Beam-plasma instability in the presence of low-frequency turbulence. [during type 3 solar emission

NASA Technical Reports Server (NTRS)

Goldman, M. V.; Dubois, D. F.

1982-01-01

General equations are derived for a linear beam-plasma instability in the presence of low-frequency turbulence. Within a 'quasi-linear' statistical approximation, these equations contain Langmuir wave scattering, diffusion, resonant and nonresonant anomalous absorption, and a 'plasma laser' effect. It is proposed that naturally occurring density irregularities in the solar wind may stabilize the beam-unstable Langmuir waves which occur during type III solar emissions.

Silicon photonics WDM transmitter with single section semiconductor mode-locked laser

NASA Astrophysics Data System (ADS)

Müller, Juliana; Hauck, Johannes; Shen, Bin; Romero-García, Sebastian; Islamova, Elmira; Azadeh, Saeed Sharif; Joshi, Siddharth; Chimot, Nicolas; Moscoso-Mártir, Alvaro; Merget, Florian; Lelarge, François; Witzens, Jeremy

2015-04-01

We demonstrate a wavelength domain-multiplexed (WDM) optical link relying on a single section semiconductor mode-locked laser (SS-MLL) with quantum dash (Q-Dash) gain material to generate 25 optical carriers spaced by 60.8 GHz, as well as silicon photonics (SiP) resonant ring modulators (RRMs) to modulate individual optical channels. The link requires optical reamplification provided by an erbium-doped fiber amplifier (EDFA) in the system experiments reported here. Open eye diagrams with signal quality factors (Q-factors) above 7 are measured with a commercial receiver (Rx). For higher compactness and cost effectiveness, reamplification of the modulated channels with a semiconductor optical amplifier (SOA) operated in the linear regime is highly desirable. System and device characterization indicate compatibility with the latter. While we expect channel counts to be primarily limited by the saturation output power level of the SOA, we estimate a single SOA to support more than eight channels. Prior to describing the system experiments, component design and detailed characterization results are reported including design and characterization of RRMs, ring-based resonant optical add-drop multiplexers (RR-OADMs) and thermal tuners, S-parameters resulting from the interoperation of RRMs and RR-OADMs, and characterization of Q-Dash SS-MLLs reamplified with a commercial SOA. Particular emphasis is placed on peaking effects in the transfer functions of RRMs and RR-OADMs resulting from transient effects in the optical domain, as well as on the characterization of SS-MLLs in regard to relative intensity noise (RIN), stability of the modes of operation, and excess noise after reamplification.

Manipulation of spin transfer torque using light

NASA Astrophysics Data System (ADS)

Rontani, Massimo; Vendelbjerg, Karsten; Sham, Lu

We show that the spin transfer torque induced by a spin-polarized current on a nanomagnet as the current flows through a semiconductor-nanomagnet-semiconductor junction is externally controlled by shining the junction off-resonantly with a strong laser beam. The excitonic coherence driven by the laser dresses the virtual electron-hole pairs coupling conduction and valence bands and inducing an evanescent state in the proximity of the nanomagnet. The Fano-like quantum interference between this localized state and the continuum spectrum is different in the two spin channels and hence it dramatically alters the spin transport, leading to the coherent control of the spin transfer torque. This work is supported by EU-FP7 Marie Curie Initial Training Network INDEX.

Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes

PubMed Central

Wang, Ru-Zhi; Zhao, Wei; Yan, Hui

2017-01-01

Considering the effect of both the buffer layer and substrate, a series of ultrathin multilayered structure cathodes (UTMC) is constructed to simulate the field emission (FE) process of nanostructured semiconductor film cathodes (NSFCs). We find a generalized FE mechanism of the NSFCs, in which there are three distinct FE modes with the change of the applied field. Our results clearly show significant differences of FE between conventional emitters and nanofilm emitters, which the non-Fowler-Nordheim characteristics and the resonant FE will be inevitable for NSFCs. Moreover, the controllable FE can be realized by fine-tuning the quantum structure of NSFCs. The generalized mechanism of NSFCs presented here may be particularly useful for design high-speed and high-frequency vacuum nano-electronic devices.

Dielectric Covered Planar Antennas

NASA Technical Reports Server (NTRS)

Llombart Juan, Nuria (Inventor); Lee, Choonsup (Inventor); Chattopadhyay, Goutam (Inventor); Gill, John J. (Inventor); Skalare, Anders J. (Inventor); Siegel, Peter H. (Inventor)

2014-01-01

An antenna element suitable for integrated arrays at terahertz frequencies is disclosed. The antenna element comprises an extended spherical (e.g. hemispherical) semiconductor lens, e.g. silicon, antenna fed by a leaky wave waveguide feed. The extended spherical lens comprises a substantially spherical lens adjacent a substantially planar lens extension. A couple of TE/TM leaky wave modes are excited in a resonant cavity formed between a ground plane and the substantially planar lens extension by a waveguide block coupled to the ground plane. Due to these modes, the primary feed radiates inside the lens with a directive pattern that illuminates a small sector of the lens. The antenna structure is compatible with known semiconductor fabrication technology and enables production of large format imaging arrays.

Modulation limit of semiconductor lasers by some parametric modulation schemes

NASA Astrophysics Data System (ADS)

Iga, K.

1985-07-01

Using the simple rate equations and small signal analysis, the modulation speed limit of semiconductor lasers with modulation schemes such as gain switching, modulation of nonradiative recombination lifetime of minority carriers, and cavity Q modulation, is calculated and compared with the injection modulation scheme of Ikegami and Suematsu (1968). It is found that the maximum modulation frequency for the gain and Q modulation can exceed the resonance-like frequency by a factor equal to the coefficient of the time derivative of the modulation parameter, though the nonradiative lifetime modulation is not shown to be different from the injection modulation. A solution for the carrier lifetime modulation of LED is obtained, and the possibility of wideband modulation in this scheme is demonstrated.

Generalized Mechanism of Field Emission from Nanostructured Semiconductor Film Cathodes

NASA Astrophysics Data System (ADS)

Wang, Ru-Zhi; Zhao, Wei; Yan, Hui

2017-03-01

Considering the effect of both the buffer layer and substrate, a series of ultrathin multilayered structure cathodes (UTMC) is constructed to simulate the field emission (FE) process of nanostructured semiconductor film cathodes (NSFCs). We find a generalized FE mechanism of the NSFCs, in which there are three distinct FE modes with the change of the applied field. Our results clearly show significant differences of FE between conventional emitters and nanofilm emitters, which the non-Fowler-Nordheim characteristics and the resonant FE will be inevitable for NSFCs. Moreover, the controllable FE can be realized by fine-tuning the quantum structure of NSFCs. The generalized mechanism of NSFCs presented here may be particularly useful for design high-speed and high-frequency vacuum nano-electronic devices.

High brightness diode lasers controlled by volume Bragg gratings

NASA Astrophysics Data System (ADS)

Glebov, Leonid

2017-02-01

Volume Bragg gratings (VBGs) recorded in photo-thermo-refractive (PTR) glass are holographic optical elements that are effective spectral and angular filters withstanding high power laser radiation. Reflecting VBGs are narrow-band spectral filters while transmitting VBGs are narrow-band angular filters. The use of these optical elements in external resonators of semiconductor lasers enables extremely resonant feedback that provides dramatic spectral and angular narrowing of laser diodes radiation without significant power and efficiency penalty. Spectral narrowing of laser diodes by reflecting VBGs demonstrated in wide spectral region from near UV to 3 μm. Commercially available VBGs have spectral width ranged from few nanometers to few tens of picometers. Efficient spectral locking was demonstrated for edge emitters (single diodes, bars, modules, and stacks), vertical cavity surface emitting lasers (VCSELs), grating coupled surface emitting lasers (GCSELs), and interband cascade lasers (ICLs). The use of multiplexed VBGs provides multiwavelength emission from a single emitter. Spectrally locked semiconductor lasers demonstrated CW power from milliwatts to a kilowatt. Angular narrowing by transmitting VBGs enables single transverse mode emission from wide aperture diode lasers having resonators with great Fresnel numbers. This feature provides close to diffraction limit divergence along a slow axis of wide stripe edge emitters. Radiation exchange between lasers by means of spatially profiled or multiplexed VBGs enables coherent combining of diode lasers. Sequence of VBGs or multiplexed VBGs enable spectral combining of spectrally narrowed diode lasers or laser modules. Thus the use of VBGs for diode lasers beam control provides dramatic increase of brightness.

Microwave, Semiconductor Research - Materials, Devices and Circuits.

DTIC Science & Technology

1984-03-01

Phenomena, Gamisch/Partenkirchen, Germany, 1982 (Springer-Verlag, Berlin). 3. "Observation of nonlinear refractive index in molecular liquids by...in non-walled dielectric waveguide including a novel use of transverse resonance equivalent circuits for the treatment of dispersion in graded index ...number) This program covers the growth and assessment of Gallium Arsenide, and related compounds and alloys, for use in microwave, millimeter, and

Evanescent Waves in High Numerical Aperture Aplanatic Solid Immersion Microscopy: Effects of Forbidden Light on Subsurface Imaging (Open Access, Publisher’s Version)

DTIC Science & Technology

2014-03-24

of the aSIL microscopy for semiconductor failure analysis and is applicable to imaging in quantum optics [18], biophotonics [19] and metrology [20...is usually of interest, the model can be adapted to applications in fields such as quantum optics and biophotonics for which the non-resonant

Influence of ICRF heating on the stability of TAEs

NASA Astrophysics Data System (ADS)

Sears, J.; Burke, W.; Parker, R. R.; Snipes, J. A.; Wolfe, S.

2007-11-01

Unstable toroidicity-induced Alfv'en eigenmodes (TAEs) can appear spontaneously due to resonant interaction with fast particles such as fusion alphas, raising concern that TAEs may threaten ITER performance. This work investigates the progression of stable TAE damping rates toward instability during a scan of ICRF heating power up to 3.1 MW. Stable eigenmodes are identified in Alcator C-Mod by the Active MHD diagnostic. Unstable TAEs are observed to appear spontaneously in C-Mod limited L-mode plasmas at sufficient tail energies generated by >3 MW of ICRF heating. However preliminary analysis of experiments with moderate ICRF heating power show that TAE stability may not simply degrade with overall fast particle content. There are hints that the stability of some TAEs may be enhanced in the presence of fast particle distribution tails. Furthermore, the radial profile of the energetic particle distribution relative to the safety factor profile affects the ICRF power influence on TAE stability.

Predicting electromagnetic ion cyclotron wave amplitude from unstable ring current plasma conditions

DOE PAGES

Fu, Xiangrong; Cowee, Misa M.; Jordanova, Vania K.; ...

2016-11-01

Electromagnetic ion cyclotron (EMIC) waves in the Earth's inner magnetosphere are enhanced fluctuations driven unstable by ring current ion temperature anisotropy. EMIC waves can resonate with relativistic electrons and play an important role in precipitation of MeV radiation belt electrons. In this study, we investigate the excitation and saturation of EMIC instability in a homogeneous plasma using both linear theory and nonlinear hybrid simulations. We have explored a four-dimensional parameter space, carried out a large number of simulations, and derived a scaling formula that relates the saturation EMIC wave amplitude to initial plasma conditions. Finally, such scaling can be usedmore » in conjunction with ring current models like ring current-atmosphere interactions model with self-consistent magnetic field to provide global dynamic EMIC wave maps that will be more accurate inputs for radiation belt modeling than statistical models.« less

Numerical simulations of thermoacoustic waves in transcritical fluids employing the spectral difference approach

NASA Astrophysics Data System (ADS)

Scalo, Carlo; Migliorino, Mario Tindaro; Chapelier, Jean-Baptiste

2017-11-01

We investigate the stability properties of thermoacoustically unstable planar waves in transcritical fluids via high-fidelity Navier-Stokes simulations based on a Spectral Difference (SD) discretization coupled with the Peng-Robinson equation of state and Chung's method for the fluid transport properties. A canonical thermoacoustically unstable standing-wave resonator filled with supercritical CO2 kept in pseudoboiling conditions in the stack is considered. Real fluid effects near the critical point are shown to boost thermoacoustic energy production, as also confirmed by companion eigenvalue analysis supporting the closure of the acoustic energy budgets. A kink in the eigenmode shape is observed at the location of pseudo phase change, consistent with the abrupt change in base impedance. The current study demonstrates a transformative approach to thermoacoustic energy generation, exploiting otherwise unwanted fluid dynamics instabilities commonly observed in aeronautical applications employing transcritical fluids.

Pulse propagation and optically controllable switch in coupled semiconductor-double-quantum-dot nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hamedi, H. R., E-mail: hamid.r.hamedi@gmail.com, E-mail: hamid.hamedi@tfai.vu.lt

The problem of pulse propagation is theoretically investigated through a coupled semiconductor-double-quantum-dot (SDQD) nanostructure. Solving the coupled Maxwell–Bloch equations for the SDQD and field simultaneously, the dynamic control of pulse propagation through the medium is numerically explored. It is found that when all the control fields are in exact resonance with their corresponding transitions, a weak Gaussian-shaped probe pulse is transmitted through the medium nearly without any significant absorption and losses so that it can preserve its shape for quite a long propagation distance. In contrast, when one of the control fields is not in resonance with its corresponding transition,more » the probe pulse will be absorbed by the QD medium after a short distance. Then we consider the probe pulses with higher intensities. It is realized that an intense probe pulse experiences remarkable absorption and broadening during propagation. Finally, we demonstrate that this SDQD system can be employed as an optically controllable switch for the wave propagation to transit from an absorbing phase to a perfect transparency for the probe field. The required time for such switch is also estimated through realistic values.« less

Resonant electronic excitation energy transfer by exchange mechanism in the quantum dot system

NASA Astrophysics Data System (ADS)

Chikalova-Luzina, O. P.; Samosvat, D. M.; Vyatkin, V. M.; Zegrya, G. G.

2017-11-01

A microscopic theory of nonradiative resonance energy transfer between spherical A3B5 semiconductor quantum dots by the exchange mechanism is suggested. The interdot Coulomb interaction is taken into consideration. It is assumed that the quantum dot-donor and the quantum dot-acceptor are made from the same A3B5 compound and are embedded in the matrix of another material that produces potential barriers for electrons and holes. The dependences of the energy transfer rate on the quantum-dot system parameters are found in the frame of the Kane model that provides the most adequate description of the real spectra of A3B5 semiconductors. The analytical treatment is carried out with using the density matrix method, which enabled us to perform an energy transfer analysis both in the weak-interaction approximation and in the strong-interaction approximation. The numerical calculations showed the saturation of the energy transfer rate at the distances between the donor and the acceptor approaching the contact one. The contributions of the exchange and direct Coulomb intractions can be of the same order at the small distances and can have the same value in the saturation range.

Resonant optical transducers for in-situ gas detection

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bond, Tiziana C.; Cole, Garrett; Goddard, Lynford

Configurations for in-situ gas detection are provided, and include miniaturized photonic devices, low-optical-loss, guided-wave structures and state-selective adsorption coatings. High quality factor semiconductor resonators have been demonstrated in different configurations, such as micro-disks, micro-rings, micro-toroids, and photonic crystals with the properties of very narrow NIR transmission bands and sensitivity up to 10.sup.-9 (change in complex refractive index). The devices are therefore highly sensitive to changes in optical properties to the device parameters and can be tunable to the absorption of the chemical species of interest. Appropriate coatings applied to the device enhance state-specific molecular detection.

Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

PubMed

Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-06-17

Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

Resonant optical alignment and orientation of Mn2+ spins in CdMnTe crystals

NASA Astrophysics Data System (ADS)

Baryshnikov, K. A.; Langer, L.; Akimov, I. A.; Korenev, V. L.; Kusrayev, Yu. G.; Averkiev, N. S.; Yakovlev, D. R.; Bayer, M.

2015-11-01

We report on spin orientation and alignment of Mn2 + ions in (Cd,Mn)Te diluted magnetic semiconductor crystals using resonant intracenter excitation with circular- and linear-polarized light. The resulting polarized emission of the magnetic ions is observed at low temperatures when the spin relaxation time of the Mn2 + ions is in the order of 1 ms , which considerably exceeds the photoluminescence decay time of 23 μ s . We demonstrate that the experimental data on optical orientation and alignment of Mn2 + ions can be explained using a phenomenological model that is based on the approximation of isolated centers.

Magnetic-field-induced delocalized to localized transformation in GaAs:N.

PubMed

Alberi, K; Crooker, S A; Fluegel, B; Beaton, D A; Ptak, A J; Mascarenhas, A

2013-04-12

The use of a high magnetic field (57 T) to study the formation and evolution of nitrogen (N) cluster and supercluster states in GaAs:N is demonstrated. A magnetic field is used to lift the conduction band edge and expose resonant N cluster states so that they can be directly experimentally investigated. The reduction of the exciton Bohr radius also results in the fragmentation of N supercluster states, enabling a magnetic field induced delocalized to localized transition. The application of very high magnetic fields thus presents a powerful way to probe percolation phenomena in semiconductors with bound and resonant isoelectronic cluster states.

Modelling of optoelectronic circuits based on resonant tunneling diodes

NASA Astrophysics Data System (ADS)

Rei, João. F. M.; Foot, James A.; Rodrigues, Gil C.; Figueiredo, José M. L.

2017-08-01

Resonant tunneling diodes (RTDs) are the fastest pure electronic semiconductor devices at room temperature. When integrated with optoelectronic devices they can give rise to new devices with novel functionalities due to their highly nonlinear properties and electrical gain, with potential applications in future ultra-wide-band communication systems (see e.g. EU H2020 iBROW Project). The recent coverage on these devices led to the need to have appropriated simulation tools. In this work, we present RTD based optoelectronic circuits simulation packages to provide circuit signal level analysis such as transient and frequency responses. We will present and discuss the models, and evaluate the simulation packages.

Spin dephasing in a magnetic dipole field.

PubMed

Ziener, C H; Kampf, T; Reents, G; Schlemmer, H-P; Bauer, W R

2012-05-01

Transverse relaxation by dephasing in an inhomogeneous field is a general mechanism in physics, for example, in semiconductor physics, muon spectroscopy, or nuclear magnetic resonance. In magnetic resonance imaging the transverse relaxation provides information on the properties of several biological tissues. Since the dipole field is the most important part of the multipole expansion of the local inhomogeneous field, dephasing in a dipole field is highly important in relaxation theory. However, there have been no analytical solutions which describe the dephasing in a magnetic dipole field. In this work we give a complete analytical solution for the dephasing in a magnetic dipole field which is valid over the whole dynamic range.

Inherent overload protection for the series resonant converter

NASA Technical Reports Server (NTRS)

King, R. J.; Stuart, T. A.

1983-01-01

The overload characteristics of the full bridge series resonant power converter are considered. This includes analyses of the two most common control methods presently in use. The first of these uses a current zero crossing detector to synchronize the control signals and is referred to as the alpha controller. The second is driven by a voltage controlled oscillator and is referred to as the gamma controller. It is shown that the gamma controller has certain reliability advantages in that it can be designed with inherent short circuit protection. Experimental results are included for an 86 kHz converter using power metal-oxide-semiconductor field-effect transistors (MOSFETs).

High-performance flexible microwave passives on plastic

NASA Astrophysics Data System (ADS)

Ma, Zhenqiang; Seo, Jung-Hun; Cho, Sang June; Zhou, Weidong

2014-06-01

We report the demonstration of bendable inductors, capacitors and switches fabricated on a polyethylene terephthalate (PET) substrate that can operate at high microwave frequencies. By employing bendable dielectric and single crystalline semiconductor materials, spiral inductors and metal-insulator-metal (MIM) capacitors with high quality factors and high resonance frequencies and single-pole, single-throw (SPST) switches were archived. The effects of mechanical bending on the performance of inductors, capacitors and switches were also measured and analyzed. We further investigated the highest possible resonance frequencies and quality factors of inductors and capacitors and, high frequency responses and insertion loss. These demonstrations will lead to flexible radio-frequency and microwave systems in the future.

Tunable quantum well infrared detector

NASA Technical Reports Server (NTRS)

Maserjian, Joseph (Inventor)

1990-01-01

A novel infrared detector (20, 20', 20), is provided, which is characterized by photon-assisted resonant tunneling between adjacent quantum wells (22a, 22b) separated by barrier layers (28) in an intrinsic semiconductor layer (24) formed on an n.sup.+ substrate (26), wherein the resonance is electrically tunable over a wide band of wavelengths in the near to long infrared region. An n.sup.+ contacting layer (34) is formed over the intrinsic layer and the substrate is n.sup.+ doped to provide contact to the quantum wells. The detector permits fabrication of arrays (30) (one-dimensional and two-dimensional) for use in imaging and spectroscopy applications.

Resonant optical transducers for in-situ gas detection

DOEpatents

Bond, Tiziana C; Cole, Garrett; Goddard, Lynford

2016-06-28

Configurations for in-situ gas detection are provided, and include miniaturized photonic devices, low-optical-loss, guided-wave structures and state-selective adsorption coatings. High quality factor semiconductor resonators have been demonstrated in different configurations, such as micro-disks, micro-rings, micro-toroids, and photonic crystals with the properties of very narrow NIR transmission bands and sensitivity up to 10.sup.-9 (change in complex refractive index). The devices are therefore highly sensitive to changes in optical properties to the device parameters and can be tunable to the absorption of the chemical species of interest. Appropriate coatings applied to the device enhance state-specific molecular detection.

Research on SOI-based micro-resonator devices

NASA Astrophysics Data System (ADS)

Xiao, Xi; Xu, Haihua; Hu, Yingtao; Zhou, Liang; Xiong, Kang; Li, Zhiyong; Li, Yuntao; Fan, Zhongchao; Han, Weihua; Yu, Yude; Yu, Jinzhong

2010-10-01

SOI (silicon-on-insulator)-based micro-resonator is the key building block of silicon photonics, which is considered as a promising solution to alleviate the bandwidth bottleneck of on-chip interconnects. Silicon-based sub-micron waveguide, microring and microdisk devices are investigated in Institute of Semiconductors, Chinese Academy of Sciences. The main progress in recent years is presented in this talk, such as high Q factor single mode microdisk filters, compact thirdorder microring filters with the through/drop port extinctions to be ~ 30/40 dB, fast microring electro-optical switches with the switch time of < 400 ps and crosstalk < -23 dB, and > 10 Gbit/s high speed microring modulators.

GaAs-based resonant tunneling diode (RTD) epitaxy on Si for highly sensitive strain gauge applications.

PubMed

Li, Jie; Guo, Hao; Liu, Jun; Tang, Jun; Ni, Haiqiao; Shi, Yunbo; Xue, Chenyang; Niu, Zhichuan; Zhang, Wendong; Li, Mifeng; Yu, Ying

2013-05-08

As a highly sensitive strain gauge element, GaAs-based resonant tunneling diode (RTD) has already been applied in microelectromechanical system (MEMS) sensors. Due to poor mechanical properties and high cost, GaAs-based material has been limited in applications as the substrate for MEMS. In this work, we present a method to fabricate the GaAs-based RTD on Si substrate. From the experimental results, it can be concluded that the piezoresistive coefficient achieved with this method reached 3.42 × 10-9 m2/N, which is about an order of magnitude higher than the Si-based semiconductor piezoresistors.

Observations of Traveling Crossflow Resonant Triad Interactions on a Swept Wing

NASA Technical Reports Server (NTRS)

Eppink, Jenna L.; Wlezien, Richard

2012-01-01

Experimental evidence indicates the presence of a triad resonance interaction between traveling crossflow modes in a swept wing flow. Results indicate that this interaction occurs when the stationary and traveling crossflow modes have similar and relatively low amplitudes (approx.1% to 6% of the total freestream velocity). The resonant interaction occurs at instability amplitudes well below those typically known to cause transition, yet transition is observed to occur just downstream of the resonance. In each case, two primary linearly unstable traveling crossflow modes are nonlinearly coupled to a higher frequency linearly stable mode at the sum of their frequencies. The higher-frequency mode is linearly stable and presumed to exist as a consequence of the interaction of the two primary modes. Autoand cross-bicoherence are used to determine the extent of phase-matching between the modes, and wavenumber matching confirms the triad resonant nature of the interaction. The bicoherence results indicate a spectral broadening mechanism and the potential path to early transition. The implications for laminar flow control in swept wing flows are significant. Even if stationary crossflow modes remain subcritical, traveling crossflow interactions can lead to early transition.

Metal-core/semiconductor-shell nanocones for broadband solar absorption enhancement.

PubMed

Zhou, Lin; Yu, Xiaoqiang; Zhu, Jia

2014-02-12

Nanostructure-based photovoltaic devices have exhibited several advantages, such as reduced reflection, extraordinary light trapping, and so forth. In particular, semiconductor nanostructures provide optical modes that have strong dependence on the size and geometry. Metallic nanostructures also attract a lot of attention because of the appealing plasmonic effect on the near-field enhancement. In this study, we propose a novel design, the metal-core/semiconductor-shell nanocones with the core radius varying in a linearly gradient style. With a thin layer of semiconductor absorber coated on a metallic cone, such a design can lead to significant and broadband absorption enhancement across the entire visible and near-infrared solar spectrum. As an example of demonstration, a layer of 16 nm thick crystalline silicon (c-Si) coated on a silver nanocone can absorb 27% of standard solar radiation across a broad spectral range of 300-1100 nm, which is equivalent to a 700 nm thick flat c-Si film. Therefore, the absorption enhancement factor approaching the Yablonovitch limit is achieved with this design. The significant absorption enhancement can be ascribed to three types of optical modes, that is, Fabry-Perot modes, plasmonic modes, and hybrid modes that combine the features of the previous two. In addition, the unique nanocone geometry enables the linearly gradient radius of the semiconductor shell, which can support multiple optical resonances, critical for the broadband absorption. Our design may find general usage as elements for the low cost, high efficiency solar conversion and water-splitting devices.

Architectures for Improved Organic Semiconductor Devices

NASA Astrophysics Data System (ADS)

Beck, Jonathan H.

Advancements in the microelectronics industry have brought increasing performance and decreasing prices to a wide range of users. Conventional silicon-based electronics have followed Moore's law to provide an ever-increasing integrated circuit transistor density, which drives processing power, solid-state memory density, and sensor technologies. As shrinking conventional integrated circuits became more challenging, researchers began exploring electronics with the potential to penetrate new applications with a low price of entry: "Electronics everywhere." The new generation of electronics is thin, light, flexible, and inexpensive. Organic electronics are part of the new generation of thin-film electronics, relying on the synthetic flexibility of carbon molecules to create organic semiconductors, absorbers, and emitters which perform useful tasks. Organic electronics can be fabricated with low energy input on a variety of novel substrates, including inexpensive plastic sheets. The potential ease of synthesis and fabrication of organic-based devices means that organic electronics can be made at very low cost. Successfully demonstrated organic semiconductor devices include photovoltaics, photodetectors, transistors, and light emitting diodes. Several challenges that face organic semiconductor devices are low performance relative to conventional devices, long-term device stability, and development of new organic-compatible processes and materials. While the absorption and emission performance of organic materials in photovoltaics and light emitting diodes is extraordinarily high for thin films, the charge conduction mobilities are generally low. Building highly efficient devices with low-mobility materials is one challenge. Many organic semiconductor films are unstable during fabrication, storage, and operation due to reactions with water, oxygen and hydroxide. A final challenge facing organic electronics is the need for new processes and materials for electrodes, semiconductors and substrates compatible with low-temperature, flexible, and oxygenated and aromatic solvent-free fabrication. Materials and processes must be capable of future high volume production in order to enable low costs. In this thesis we explore several techniques to improve organic semiconductor device performance and enable new fabrication processes. In Chapter 2, I describe the integration of sub-optical-wavelength nanostructured electrodes that improve fill factor and power conversion efficiency in organic photovoltaic devices. Photovoltaic fill factor performance is one of the primary challenges facing organic photovoltaics because most organic semiconductors have poor charge mobility. Our electrical and optical measurements and simulations indicate that nanostructured electrodes improve charge extraction in organic photovoltaics. In Chapter 3, I describe a general method for maximizing the efficiency of organic photovoltaic devices by simultaneously optimizing light absorption and charge carrier collection. We analyze the potential benefits of light trapping strategies for maximizing the overall power conversion efficiency of organic photovoltaic devices. This technique may be used to improve organic photovoltaic materials with low absorption, or short exciton diffusion and carrier-recombination lengths, opening up the device design space. In Chapter 4, I describe a process for high-quality graphene transfer onto chemically sensitive, weakly interacting organic semiconductor thin-films. Graphene is a promising flexible and highly transparent electrode for organic electronics; however, transferring graphene films onto organic semiconductor devices was previously impossible. We demonstrate a new transfer technique based on an elastomeric stamp coated with an fluorinated polymer release layer. We fabricate three classes of organic semiconductor devices: field effect transistors without high temperature annealing, transparent organic light-emitting diodes, and transparent small-molecule organic photovoltaic devices.

An instability due to the nonlinear coupling of p-modes to g-modes: Implications for coalescing neutron star binaries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weinberg, Nevin N.; Arras, Phil; Burkart, Joshua, E-mail: nevin@mit.edu

2013-06-01

A weakly nonlinear fluid wave propagating within a star can be unstable to three-wave interactions. The resonant parametric instability is a well-known form of three-wave interaction in which a primary wave of frequency ω {sub a} excites a pair of secondary waves of frequency ω {sub b} + ω {sub c} ≅ ω {sub a}. Here we consider a nonresonant form of three-wave interaction in which a low-frequency primary wave excites a high-frequency p-mode and a low-frequency g-mode such that ω {sub b} + ω {sub c} >> ω {sub a}. We show that a p-mode can couple so stronglymore » to a g-mode of similar radial wavelength that this type of nonresonant interaction is unstable even if the primary wave amplitude is small. As an application, we analyze the stability of the tide in coalescing neutron star binaries to p-g mode coupling. We find that the equilibrium tide and dynamical tide are both p-g unstable at gravitational wave frequencies f {sub gw} ≳ 20 Hz and drive short wavelength p-g mode pairs to significant energies on very short timescales (much less than the orbital decay time due to gravitational radiation). Resonant parametric coupling to the tide is, by contrast, either stable or drives modes at a much smaller rate. We do not solve for the saturation of the p-g instability and therefore we cannot say precisely how it influences the evolution of neutron star binaries. However, we show that if even a single daughter mode saturates near its wave breaking amplitude, the p-g instability of the equilibrium tide will (1) induce significant orbital phase errors (Δφ ≳ 1 radian) that accumulate primarily at low frequencies (f {sub gw} ≲ 50 Hz) and (2) heat the neutron star core to a temperature of T ∼ 10{sup 10} K. Since there are at least ∼100 unstable p-g daughter pairs, Δφ and T are potentially much larger than these values. Tides might therefore significantly influence the gravitational wave signal and electromagnetic emission from coalescing neutron star binaries at much larger orbital separations than previously thought.« less

Combustion Instabilities In Solid Propellant Rocket Motors

DTIC Science & Technology

2004-01-01

instability in a self-excited system, sketched in Figure 1.5(a). In contrast, the initial transient in a linear system forced by an invariant external agent ...because the driving agent supplies only ¯nite power. (a) (b) Figure 1.5. Transient behavior of (a) Self Excited Linearly Unstable Motions; (b) Forced...the vibration of a Helmholtz resonator obtained, for example, by blowing over the open end of a bottle. The cause in a combustion chamber may be the

Ultrafast all-optical tuning of direct-gap semiconductor metasurfaces

DOE PAGES

Shcherbakov, Maxim R.; Liu, Sheng; Zubyuk, Varvara V.; ...

2017-05-12

Optical metasurfaces are regular quasi-planar nanopatterns that can apply diverse spatial and spectral transformations to light waves. But, metasurfaces are no longer adjustable after fabrication, and a critical challenge is to realise a technique of tuning their optical properties that is both fast and efficient. Here, we experimentally realise an ultrafast tunable metasurface consisting of subwavelength gallium arsenide nanoparticles supporting Mie-type resonances in the near infrared. In using transient reflectance spectroscopy, we demonstrate a picosecond-scale absolute reflectance modulation of up to 0.35 at the magnetic dipole resonance of the metasurfaces and a spectral shift of the resonance by 30 nm,more » both achieved at unprecedentedly low pump fluences of less than 400 μJ cm –2. Our findings thereby enable a versatile tool for ultrafast and efficient control of light using light.« less

Dielectric Meta-Holograms Enabled with Dual Magnetic Resonances in Visible Light.

PubMed

Li, Zile; Kim, Inki; Zhang, Lei; Mehmood, Muhammad Q; Anwar, Muhammad S; Saleem, Murtaza; Lee, Dasol; Nam, Ki Tae; Zhang, Shuang; Luk'yanchuk, Boris; Wang, Yu; Zheng, Guoxing; Rho, Junsuk; Qiu, Cheng-Wei

2017-09-26

Efficient transmission-type meta-holograms have been demonstrated using high-index dielectric nanostructures based on Huygens' principle. It is crucial that the geometry size of building blocks be judiciously optimized individually for spectral overlap of electric and magnetic dipoles. In contrast, reflection-type meta-holograms using the metal/insulator/metal scheme and geometric phase can be readily achieved with high efficiency and small thickness. Here, we demonstrate a general platform for design of dual magnetic resonance based meta-holograms based on the geometric phase using silicon nanostructures that are quarter wavelength thick for visible light. Significantly, the projected holographic image can be unambiguously observed without a receiving screen even under the illumination of natural light. Within the well-developed semiconductor industry, our ultrathin magnetic resonance-based meta-holograms may have promising applications in anticounterfeiting and information security.

Ultrafast all-optical tuning of direct-gap semiconductor metasurfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shcherbakov, Maxim R.; Liu, Sheng; Zubyuk, Varvara V.

Optical metasurfaces are regular quasi-planar nanopatterns that can apply diverse spatial and spectral transformations to light waves. But, metasurfaces are no longer adjustable after fabrication, and a critical challenge is to realise a technique of tuning their optical properties that is both fast and efficient. Here, we experimentally realise an ultrafast tunable metasurface consisting of subwavelength gallium arsenide nanoparticles supporting Mie-type resonances in the near infrared. In using transient reflectance spectroscopy, we demonstrate a picosecond-scale absolute reflectance modulation of up to 0.35 at the magnetic dipole resonance of the metasurfaces and a spectral shift of the resonance by 30 nm,more » both achieved at unprecedentedly low pump fluences of less than 400 μJ cm –2. Our findings thereby enable a versatile tool for ultrafast and efficient control of light using light.« less

Mode selection in square resonator microlasers for widely tunable single mode lasing.

PubMed

Tang, Ming-Ying; Sui, Shao-Shuai; Yang, Yue-De; Xiao, Jin-Long; Du, Yun; Huang, Yong-Zhen

2015-10-19

Mode selection in square resonator semiconductor microlasers is demonstrated by adjusting the width of the output waveguide coupled to the midpoint of one side. The simulation and experimental results reveal that widely tunable single mode lasing can be realized in square resonator microlasers. Through adjusting the width of the output waveguide, the mode interval of the high-Q modes can reach four times of the longitudinal mode interval. Therefore, mode hopping can be efficiently avoided and the lasing wavelength can be tuned continuously by tuning the injection current. For a 17.8-μm-side-length square microlaser with a 1.4-μm-width output waveguide, mode-hopping-free single-mode operation is achieved with a continuous tuning range of 9.2 nm. As a result, the control of the lasing mode is realized for the square microlasers.

Covellite CuS nanocrystals: realizing rapid microwave-assisted synthesis in air and unravelling the disappearance of their plasmon resonance after coupling with carbon nanotubes

NASA Astrophysics Data System (ADS)

Kim, Mee Rahn; Hafez, Hassan A.; Chai, Xin; Besteiro, Lucas V.; Tan, Long; Ozaki, Tsuneyuki; Govorov, Alexander O.; Izquierdo, Ricardo; Ma, Dongling

2016-06-01

Semiconductor nanocrystals that show plasmonic resonance represent an emerging class of highly promising plasmonic materials with potential applications in diverse fields, such as sensing and optical and optoelectronic devices. We report a new approach to synthesizing homogeneous covellite CuS nanoplatelets in air and the almost complete disappearance of their plasmonic resonance once coupled with multiwalled carbon nanotubes (MWCNTs). These nanoplatelets were rapidly synthesized by a simple microwave-assisted approach at a relatively low reaction temperature in air, instead of under N2 as reported previously. These less severe synthesis conditions were enabled by appropriately selecting a Cu precursor and preparing a precursor sulfur solution (instead of using solid sulfur) and by using microwave radiation as the heat source. The advantages of utilizing microwave irradiation, including uniform and rapid heating, became clear after comparing the results of the synthesis with those achieved using a conventional oil-bath method under N2. The CuS nanoplatelets prepared in this way showed very strong plasmon resonance at c. 1160 nm as a result of their free charge carriers at the calculated density of nh = 1.5 × 1022 cm-3 based on the Drude model. With the aim of exploring their potential for near-infrared responsive optoelectronic devices, they were hybridized with functionalized MWCNTs. Their strong plasmon resonance almost completely disappeared on hybridization. Detailed investigations excluded the effect of possible structural changes in the CuS nanoplatelets during the hybridization process and a possible effect on the plasmon resonance arising from the chemical bonding of surface ligands. Charge transfer was considered to be the main reason for the almost complete disappearance of the plasmon resonance, which was further confirmed by terahertz (THz) time-domain spectrometry and THz time-resolved spectrometry measurements performed on the CuS-MWCNT nanohybrids. By extracting the rising and relaxation constants through fitting a single-exponential rising function and a bi-exponential relaxation function, in combination with the results of THz differential transmission as a function of the NIR pump fluence, it was found that hole injection changed the electronic properties of the MWCNTs only subtly on a short picosecond time scale, whereas the nature of the band structure of the MWCNTs remained largely unchanged. These findings aid our understanding of recently emerging semiconductor plasmonics and will also help in developing practical applications.Semiconductor nanocrystals that show plasmonic resonance represent an emerging class of highly promising plasmonic materials with potential applications in diverse fields, such as sensing and optical and optoelectronic devices. We report a new approach to synthesizing homogeneous covellite CuS nanoplatelets in air and the almost complete disappearance of their plasmonic resonance once coupled with multiwalled carbon nanotubes (MWCNTs). These nanoplatelets were rapidly synthesized by a simple microwave-assisted approach at a relatively low reaction temperature in air, instead of under N2 as reported previously. These less severe synthesis conditions were enabled by appropriately selecting a Cu precursor and preparing a precursor sulfur solution (instead of using solid sulfur) and by using microwave radiation as the heat source. The advantages of utilizing microwave irradiation, including uniform and rapid heating, became clear after comparing the results of the synthesis with those achieved using a conventional oil-bath method under N2. The CuS nanoplatelets prepared in this way showed very strong plasmon resonance at c. 1160 nm as a result of their free charge carriers at the calculated density of nh = 1.5 × 1022 cm-3 based on the Drude model. With the aim of exploring their potential for near-infrared responsive optoelectronic devices, they were hybridized with functionalized MWCNTs. Their strong plasmon resonance almost completely disappeared on hybridization. Detailed investigations excluded the effect of possible structural changes in the CuS nanoplatelets during the hybridization process and a possible effect on the plasmon resonance arising from the chemical bonding of surface ligands. Charge transfer was considered to be the main reason for the almost complete disappearance of the plasmon resonance, which was further confirmed by terahertz (THz) time-domain spectrometry and THz time-resolved spectrometry measurements performed on the CuS-MWCNT nanohybrids. By extracting the rising and relaxation constants through fitting a single-exponential rising function and a bi-exponential relaxation function, in combination with the results of THz differential transmission as a function of the NIR pump fluence, it was found that hole injection changed the electronic properties of the MWCNTs only subtly on a short picosecond time scale, whereas the nature of the band structure of the MWCNTs remained largely unchanged. These findings aid our understanding of recently emerging semiconductor plasmonics and will also help in developing practical applications. Electronic supplementary information (ESI) available: TEM, XRD, SAED and UV-Vis-NIR absorption spectra of the control reaction results. See DOI: 10.1039/c6nr03426h

Resonantly enhanced second-harmonic generation using III–V semiconductor all-dielectric metasurfaces

DOE PAGES

Liu, Sheng; Sinclair, Michael B.; Saravi, Sina; ...

2016-08-08

Nonlinear optical phenomena in nanostructured materials have been challenging our perceptions of nonlinear optical processes that have been explored since the invention of lasers. For example, the ability to control optical field confinement, enhancement, and scattering almost independently allows nonlinear frequency conversion efficiencies to be enhanced by many orders of magnitude compared to bulk materials. Also, the subwavelength length scale renders phase matching issues irrelevant. Compared with plasmonic nanostructures, dielectric resonator metamaterials show great promise for enhanced nonlinear optical processes due to their larger mode volumes. Here, we present, for the first time, resonantly enhanced second-harmonic generation (SHG) using galliummore » arsenide (GaAs) based dielectric metasurfaces. Using arrays of cylindrical resonators we observe SHG enhancement factors as large as 10 4 relative to unpatterned GaAs. At the magnetic dipole resonance, we measure an absolute nonlinear conversion efficiency of ~2 × 10 –5 with ~3.4 GW/cm 2 pump intensity. In conclusion, the polarization properties of the SHG reveal that both bulk and surface nonlinearities play important roles in the observed nonlinear process.« less

Soft switching resonant converter with duty-cycle control in DC micro-grid system

NASA Astrophysics Data System (ADS)

Lin, Bor-Ren

2018-01-01

Resonant converter has been widely used for the benefits of low switching losses and high circuit efficiency. However, the wide frequency variation is the main drawback of resonant converter. This paper studies a new modular resonant converter with duty-cycle control to overcome this problem and realise the advantages of low switching losses, no reverse recovery current loss, balance input split voltages and constant frequency operation for medium voltage direct currentgrid or system network. Series full-bridge (FB) converters are used in the studied circuit in order to reduce the voltage stresses and power rating on power semiconductors. Flying capacitor is used between two FB converters to balance input split voltages. Two circuit modules are paralleled on the secondary side to lessen the current rating of rectifier diodes and the size of magnetic components. The resonant tank is operated at inductive load circuit to help power switches to be turned on at zero voltage with wide load range. The pulse-width modulation scheme is used to regulate output voltage. Experimental verifications are provided to show the performance of the proposed circuit.

Packed Planetary Systems

NASA Astrophysics Data System (ADS)

Barnes, R.; Greenberg, R.

2005-08-01

Planetary systems display a wide range of appearances, with apparently arbitrary values of semi-major axis, eccentricity, etc. We reduce the complexity of orbital configurations to a single value, δ , which is a measure of how close, over secular timescales ( ˜10,000 orbits), two consecutive planets come to each other. We measure this distance relative to the sum of the radii of their Hill spheres, sometimes referred to as mutual Hill radii (MHR). We determine the closest approach distance by numerically integrating the entire system on coplanar orbits, using minimum masses. For non-resonant systems, close approach occurs during apsidal alignment, either parallel or anti-parallel. For resonant pairs the distance at conjunction determines the closest approach distance. Previous analytic work found that planets on circular orbits were assuredly unstable if they came within 3.5 MHR (i.e. Gladman 1993; Chambers, Wetherill & Boss 1996). We find that most known pairs of jovian planets (including those in our solar system) come within 3.5 -- 7 MHR of each other. We also find that several systems are unstable (their closest approach distance is less than 3.5 MHR). These systems, if they are real, probably exist in an observationally permitted location somewhat different from the current best fit. In these cases, the planets' closest approach distance will most likely also be slightly larger than 3.5 MHR. Most pairs beyond 7 MHR probably experienced post-formation migration (i.e. tidal circularization, inward scattering of small bodies) which moved them further apart. This result is even more remarkable since we have used the minimum masses; most likely the systems are inclined to the line of sight, making the Hill spheres larger, and shrinking δ . This dense packing may reflect a tendency for planets to form as close together as they can without being dynamically unstable. This result further implies there may be a large number of smaller, currently undetectable companions packed in orbits around stars with known planets.