Rail integrity alert system (RIAS) feature discrimination : final report.

DOT National Transportation Integrated Search

2016-08-01

This report describes GE Global Researchs research, in partnership with GE Transportation, into developing and deploying : algorithms for a locomotive-based inductive sensing system that has a very high probability of detecting broken rails with v...

Sub-5 nm, globally aligned graphene nanoribbons on Ge(001)

DOE PAGES

Kiraly, Brian; Mannix, Andrew J.; Jacobberger, Robert M.; ...

2016-05-23

Graphene nanoribbons (GNRs) hold great promise for future electronics because of their edge and width dependent electronic bandgaps and exceptional transport properties. While significant progress toward such devices has been made, the field has been limited by difficulties achieving narrow widths, global alignment, and atomically pristine GNR edges on technologically relevant substrates. A recent advance has challenged these limits by using Ge(001) substrates to direct the bottom-up growth of GNRs with nearly pristine armchair edges and widths near ~10 nm via atmospheric pressure chemical vapor deposition. In this work, we extend the growth of GNRs on Ge(001) to ultra-high vacuummore » conditions and realize GNRs narrower than 5 nm. Armchair graphene nanoribbons directed along the Ge <110> surface directions are achieved with excellent width control and relatively large bandgaps. As a result, the bandgap magnitude and electronic uniformity make these new materials excellent candidates for future developments in nanoelectronics.« less

Realization of 10 GHz minus 30dB on-chip micro-optical links with Si-Ge RF bi-polar technology

NASA Astrophysics Data System (ADS)

Ogudo, Kingsley A.; Snyman, Lukas W.; Polleux, Jean-Luc; Viana, Carlos; Tegegne, Zerihun

2014-06-01

Si Avalanche based LEDs technology has been developed in the 650 -850nm wavelength regime [1, 2]. Correspondingly, small micro-dimensioned detectors with pW/μm2 sensitivity have been developed for the same wavelength range utilizing Si-Ge detector technology with detection efficiencies of up to 0.85, and with a transition frequencies of up to 80 GHz [3] A series of on-chip optical links of 50 micron length, utilizing 650 - 850 nm propagation wavelength have been designed and realized, utilizing a Si Ge radio frequency bipolar process. Micron dimensioned optical sources, waveguides and detectors were all integrated on the same chip to form a complete optical link on-chip. Avalanche based Si LEDs (Si Av LEDs), Schottky contacting, TEOS densification strategies, silicon nitride based waveguides, and state of the art Si-Ge bipolar detector technologies were used as key design strategies. Best performances show optical coupling from source to detector of up to 10GHz and - 40dBm total optical link budget loss with a potential transition frequency coupling of up to 40GHz utilizing Si Ge based LEDs. The technology is particularly suitable for application as on-chip optical links, optical MEMS and MOEMS, as well as for optical interconnects utilizing low loss, side surface, waveguide- to-optical fiber coupling. Most particularly is one of our designed waveguide which have a good core axis alignment with the optical source and yield 10GHz -30dB on-chip micro-optical links as shown in Fig 9 (c). The technology as developed has been appropriately IP protected.

Software Tools for Emittance Measurement and Matching for 12 GeV CEBAF

DOE Office of Scientific and Technical Information (OSTI.GOV)

Turner, Dennis L.

2016-05-01

This paper discusses model-driven setup of the Continuous Electron Beam Accelerator Facility (CEBAF) for the 12GeV era, focusing on qsUtility. qsUtility is a set of software tools created to perform emittance measurements, analyze those measurements, and compute optics corrections based upon the measurements.qsUtility was developed as a toolset to facilitate reducing machine configuration time and reproducibility by way of an accurate accelerator model, and to provide Operations staff with tools to measure and correct machine optics with little or no assistance from optics experts.

MultiGeMS: detection of SNVs from multiple samples using model selection on high-throughput sequencing data.

PubMed

Murillo, Gabriel H; You, Na; Su, Xiaoquan; Cui, Wei; Reilly, Muredach P; Li, Mingyao; Ning, Kang; Cui, Xinping

2016-05-15

Single nucleotide variant (SNV) detection procedures are being utilized as never before to analyze the recent abundance of high-throughput DNA sequencing data, both on single and multiple sample datasets. Building on previously published work with the single sample SNV caller genotype model selection (GeMS), a multiple sample version of GeMS (MultiGeMS) is introduced. Unlike other popular multiple sample SNV callers, the MultiGeMS statistical model accounts for enzymatic substitution sequencing errors. It also addresses the multiple testing problem endemic to multiple sample SNV calling and utilizes high performance computing (HPC) techniques. A simulation study demonstrates that MultiGeMS ranks highest in precision among a selection of popular multiple sample SNV callers, while showing exceptional recall in calling common SNVs. Further, both simulation studies and real data analyses indicate that MultiGeMS is robust to low-quality data. We also demonstrate that accounting for enzymatic substitution sequencing errors not only improves SNV call precision at low mapping quality regions, but also improves recall at reference allele-dominated sites with high mapping quality. The MultiGeMS package can be downloaded from https://github.com/cui-lab/multigems xinping.cui@ucr.edu Supplementary data are available at Bioinformatics online. © The Author 2016. Published by Oxford University Press. All rights reserved. For Permissions, please e-mail: journals.permissions@oup.com.

Size-Tunable Photothermal Germanium Nanocrystals.

PubMed

Sun, Wei; Zhong, Grace; Kübel, Christian; Jelle, Abdinoor A; Qian, Chenxi; Wang, Lu; Ebrahimi, Manuchehr; Reyes, Laura M; Helmy, Amr S; Ozin, Geoffrey A

2017-05-22

Germanium nanocrystals (ncGe) have not received as much attention as silicon nanocrystals (ncSi). However, Ge has demonstrated superiority over Si nanomaterials in some applications. Examples include, high charge-discharge rate lithium-ion batteries, small band-gap opto-electronic devices, and photo-therapeutics. When stabilized in an oxide matrix (ncGe/GeO x ), its high charge-retention has enabled non-volatile memories. It has also found utility as a high-capacity anode material for Li-ion batteries with impressive stability. Herein, we report an organic-free synthesis of size-controlled ncGe in a GeO x matrix as well as freestanding ncGe, via the thermal disproportionation of GeO prepared from thermally induced dehydration of Ge(OH) 2 . The photothermal effect of ncGe, quantified by Raman spectroscopy, is found to be size dependent and superior to ncSi. This advance suggests applications of ncGe in photothermal therapy, desalination, and catalysis. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

The Low Temperature Epitaxy of Strained GeSn Layers Using RTCVD System

NASA Astrophysics Data System (ADS)

Kil, Yeon-Ho; Yuk, Sim-Hoon; Jang, Han-Soo; Lee, Sang-Geul; Choi, Chel-Jong; Shim, Kyu-Hwan

2018-03-01

We have investigated the low temperature (LT) growth of GeSn-Ge-Si structures using rapid thermal chemical vapor deposition system utilizing Ge2H6 and SnCl4 as the reactive precursors. Due to inappropriate phenomena, such as, Ge etch and Sn segregation, it was hard to achieve high quality GeSn epitaxy at the temperature > 350 °C. On the contrary, we found that the SnCl4 promoted the reaction of Ge2H6 precursors in a certain process condition of LT, 240-360 °C. In return, we could perform the growth of GeSn epi layer with 7.7% of Sn and its remaining compressive strain of 71.7%. The surface propagated defects were increased with increasing the Sn content in the GeSn layer confirmed by TEM analysis. And we could calculate the activation energies at lower GeSn growth temperature regime using by Ge2H6 and SnCl4 precursors about 0.43 eV.

Theoretical Study of Si(x) Ge(y)Li(z) (x=4-10, y=1-10, z=0-10) Clusters for Designing of Novel Nanostructured Materials to be Utilized as Anodes for Lithium-Ion Batteries

DTIC Science & Technology

2015-03-16

AFRL-OSR-VA-TR-2015-0088 Theoretical Study of Novel Nanostructured Materials for Lithium - Ion Batteries Mario Sanchez-Vazquez CENTRO DE INVESTIGACION...SiGeLi Clusters for Design of Novel Nanostructured Materials to Be Utilized as Anodes for Lithium - ion Batteries 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER...utilized as anodes for Lithium - ion batteries Final Report Nancy Perez-Peralta and Mario Sanchez-Vazquez Abstract In order to find out if

Best Practices: DOD Can Achieve Better Outcomes by Standardizing the Way Manufacturing Risks are Managed

DTIC Science & Technology

2010-04-01

scale needed can be proven. As an example, GE Healthcare’s Gemstone scintillator underwent years of laboratory development on a small scale until GE...GE Healthcare provides another example of proving out manufacturing processes prior to production in their development of the Gemstone scintillator...including the development and manufacturing of their Gemstone scintillator for use on advanced CT scanners. • Honeywell Aerospace, a global provider

Effect of germanium dioxide on growth of Spirulina platensis

NASA Astrophysics Data System (ADS)

Cao, Ji-Xiang

1996-12-01

This study on the effect of different concentrations of germanium dioxide (GeO2) on the specific growth rate (SGR), pigment contents, protein content and amino acid composition of Spirulina platensis showed that Ge was not the essential element of this alga; that GeO2 could speed up growth and raise protein content of S. platensis, and could possibly influence the photosynthesis system. The concentration range of GeO2 beneficial to growth of S. platensis is from 5 100mg/l. GeO2 is proposed to be utilized to remove contamination by Chlorella spp. usually occurring in the cultivation of Spirulina.

Developing Scientific Literacy Skills through Interdisciplinary, Technology-Based Global Simulations: GlobalEd 2

ERIC Educational Resources Information Center

Lawless, Kimberly A.; Brown, Scott W.

2015-01-01

GlobalEd 2 (GE2) is a set of technology-mediated, problem-based learning (PBL) simulations for middle-grade students, that capitalises on the multidisciplinary nature of the social sciences as an expanded curricular space for students to learn and apply scientific literacies and concepts, while simultaneously also enriching their understanding of…

Dark-matter admixed white dwarfs

NASA Astrophysics Data System (ADS)

Leung, Shing Chi; Chu, Ming Chung; Lin, Lap Ming; Wong, Ka Wing

2014-03-01

We study the equilibrium structures of white dwarfs (WD) with dark matter cores formed by non-self-annihilating dark matter (DM) particles with masses ranging from 1 GeV to 100 GeV, assuming in form of an ideal degenerate Fermi gas inside the stars. For DM particles of mass 10 GeV and 100 GeV, we find that stable stellar models exist only if the mass of the DM core inside the star is less than O and -3)Msun , respectively. The global properties of these stars, and the corresponding Chandrasekhar mass (CM) limits, are essentially the same as those of traditional WD models without DM. Nevertheless, in the 10 GeV case, the gravitational attraction of the DM core is strong enough to squeeze the normal matter in the core region to densities above neutron drip. For the 1 GeV case, the DM core inside the star can be as massive as O and affects the global structure of the star significantly. The radius of a stellar model with DM can be about two times smaller than that of a traditional WD. Furthermore, the CM limit can be decreased by as much as 40%. Our results may have implications on the extent to which type Ia supernovae can be regarded as standard candles. This work is partially supported by a grant from the Research Grant Council of the Hong Kong Special Administrative Region, China (Project No. 400910).

CESM/CAM5 improvement and application: comparison and evaluation of updated CB05_GE and MOZART-4 gas-phase mechanisms and associated impacts on global air quality and climate

NASA Astrophysics Data System (ADS)

He, J.; Zhang, Y.; Tilmes, S.; Emmons, L.; Lamarque, J.-F.; Glotfelty, T.; Hodzic, A.; Vitt, F.

2015-08-01

Atmospheric chemistry plays a key role in determining the amounts and distributions of oxidants and gaseous precursors that control the formation of secondary gaseous and aerosol pollutants; all of those species can interact with the climate system. To understand the impacts of different gas-phase mechanisms on global air quality and climate predictions, in this work, a comprehensive comparative evaluation is performed using the Community Atmosphere Model (CAM) Version 5 with comprehensive tropospheric and stratospheric chemistry (CAM5-chem) within the Community Earth System Model (CESM) with two most commonly-used gas-phase chemical mechanisms: the 2005 Carbon Bond mechanism with Global Extension (CB05_GE) and the Model of OZone and Related chemical Tracers version 4 (MOZART-4) mechanism with additional updates (MOZART-4x). MOZART-4x and CB05_GE use different approaches to represent volatile organic compounds (VOCs) and different surrogates for secondary organic aerosol (SOA) precursors. MOZART-4x includes a more detailed representation of isoprene chemistry compared to CB05_GE. CB05_GE includes additional oxidation of SO2 by O3 over the surface of dust particles, which is not included in MOZART-4x. The results show that the two CAM5-chem simulations with CB05_GE and MOZART-4x predict similar chemical profiles for major gases (e.g., O3, CO, and NOx) compared to the aircraft measurements, with generally better agreement for NOy profile by CB05_GE than MOZART-4x. The concentrations of SOA at four sites in CONUS and organic carbon (OC) over the IMPROVE sites are well predicted by MOZART-4x (with NMBs of -1.9 and 2.1 %, respectively) but moderately underpredicted by CB05_GE (with NMBs of -23.1 and -20.7 %, respectively). This is mainly due to the higher biogenic emissions and hydroxyl radical levels simulated with MOZART-4x than with CB05_GE. The concentrations of OC over Europe are largely underpredicted by both MOZART-4x and CB05_GE, with NMBs of -73.0 and -75.1 %, respectively, indicating the uncertainties in the emissions of precursors and primary OC and relevant model treatments such as the oxidations of VOCs and SOA formation. Uncertainties in the emissions and convection scheme can contribute to the large bias in the model predictions (e.g., SO2, CO, black carbon, and aerosol optical depth). The two simulations also have similar cloud/radiative predictions, with slightly better performance of domain average cloud condensation nuclei (CCN) at supersaturation of 0.5 % by CB05_GE, but slightly better agreement with observed CCN (at supersaturation of 0.2 %) profile over Beijing by MOZART-4x. The two gas-phase mechanisms result in a global average difference of 0.5 W m-2 in simulated shortwave cloud radiative forcing, with significant differences (e.g., up to 13.6 W m-2) over subtropical regions.

CESM/CAM5 improvement and application: comparison and evaluation of updated CB05_GE and MOZART-4 gas-phase mechanisms and associated impacts on global air quality and climate

NASA Astrophysics Data System (ADS)

He, J.; Zhang, Y.; Tilmes, S.; Emmons, L.; Lamarque, J.-F.; Glotfelty, T.; Hodzic, A.; Vitt, F.

2015-12-01

Atmospheric chemistry plays a key role in determining the amounts and distributions of oxidants and gaseous precursors that control the formation of secondary gaseous and aerosol pollutants; all of those species can interact with the climate system. To understand the impacts of different gas-phase mechanisms on global air quality and climate predictions, in this work, a comprehensive comparative evaluation is performed using the Community Atmosphere Model (CAM) Version 5 with comprehensive tropospheric and stratospheric chemistry (CAM5-chem) within the Community Earth System Model (CESM) with the two most commonly used gas-phase chemical mechanisms: the 2005 Carbon Bond mechanism with Global Extension (CB05_GE) and the Model of OZone and Related chemical Tracers version 4 (MOZART-4) mechanism with additional updates (MOZART-4x). MOZART-4x and CB05_GE use different approaches to represent volatile organic compounds (VOCs) and different surrogates for secondary organic aerosol (SOA) precursors. MOZART-4x includes a more detailed representation of isoprene chemistry compared to CB05_GE. CB05_GE includes additional oxidation of SO2 by O3 over the surface of dust particles, which is not included in MOZART-4x. The results show that the two CAM5-chem simulations with CB05_GE and MOZART-4x predict similar chemical profiles for major gases (e.g., O3, CO, and NOx) compared to the aircraft measurements, with generally better agreement for NOy profiles by CB05_GE than MOZART-4x. The concentrations of SOA at four sites in the continental US (CONUS) and organic carbon (OC) over the IMPROVE sites are well predicted by MOZART-4x (with normalized mean biases (NMBs) of -1.9 and 2.1 %, respectively) but moderately underpredicted by CB05_GE (with NMBs of -23.1 and -20.7 %, respectively). This is mainly due to the higher biogenic emissions and OH levels simulated with MOZART-4x than with CB05_GE. The concentrations of OC over Europe are largely underpredicted by both MOZART-4x and CB05_GE, with NMBs of -73.0 and -75.1 %, respectively, indicating the uncertainties in the emissions of precursors and primary OC and relevant model treatments such as the oxidations of VOCs and SOA formation. Uncertainties in the emissions and convection scheme can contribute to the large bias in the model predictions (e.g., SO2, CO, black carbon, and aerosol optical depth). The two simulations also have similar cloud/radiative predictions, with a slightly better performance of domain average cloud condensation nuclei (CCN) at supersaturation of 0.5 % by CB05_GE, but slightly better agreement with observed CCN (at supersaturation of 0.2 %) profile over Beijing by MOZART-4x. The two gas-phase mechanisms result in a global average difference of 0.5 W m-2 in simulated shortwave cloud radiative forcing, with significant differences (e.g., up to 13.6 W m-2) over subtropical regions.

Ab initio determination of effective electron-phonon coupling factor in copper

NASA Astrophysics Data System (ADS)

Ji, Pengfei; Zhang, Yuwen

2016-04-01

The electron temperature Te dependent electron density of states g (ε), Fermi-Dirac distribution f (ε), and electron-phonon spectral function α2 F (Ω) are computed as prerequisites before achieving effective electron-phonon coupling factor Ge-ph. The obtained Ge-ph is implemented into a molecular dynamics (MD) and two-temperature model (TTM) coupled simulation of femtosecond laser heating. By monitoring temperature evolutions of electron and lattice subsystems, the result utilizing Ge-ph from ab initio calculation shows a faster decrease of Te and increase of Tl than those using Ge-ph from phenomenological treatment. The approach of calculating Ge-ph and its implementation into MD-TTM simulation is applicable to other metals.

FuGeF: A Resource Bound Secure Forwarding Protocol for Wireless Sensor Networks

PubMed Central

Umar, Idris Abubakar; Mohd Hanapi, Zurina; Sali, A.; Zulkarnain, Zuriati A.

2016-01-01

Resource bound security solutions have facilitated the mitigation of spatio-temporal attacks by altering protocol semantics to provide minimal security while maintaining an acceptable level of performance. The Dynamic Window Secured Implicit Geographic Forwarding (DWSIGF) routing protocol for Wireless Sensor Network (WSN) has been proposed to achieve a minimal selection of malicious nodes by introducing a dynamic collection window period to the protocol’s semantics. However, its selection scheme suffers substantial packet losses due to the utilization of a single distance based parameter for node selection. In this paper, we propose a Fuzzy-based Geographic Forwarding protocol (FuGeF) to minimize packet loss, while maintaining performance. The FuGeF utilizes a new form of dynamism and introduces three selection parameters: remaining energy, connectivity cost, and progressive distance, as well as a Fuzzy Logic System (FLS) for node selection. These introduced mechanisms ensure the appropriate selection of a non-malicious node. Extensive simulation experiments have been conducted to evaluate the performance of the proposed FuGeF protocol as compared to DWSIGF variants. The simulation results show that the proposed FuGeF outperforms the two DWSIGF variants (DWSIGF-P and DWSIGF-R) in terms of packet delivery. PMID:27338411

FuGeF: A Resource Bound Secure Forwarding Protocol for Wireless Sensor Networks.

PubMed

Umar, Idris Abubakar; Mohd Hanapi, Zurina; Sali, A; Zulkarnain, Zuriati A

2016-06-22

Resource bound security solutions have facilitated the mitigation of spatio-temporal attacks by altering protocol semantics to provide minimal security while maintaining an acceptable level of performance. The Dynamic Window Secured Implicit Geographic Forwarding (DWSIGF) routing protocol for Wireless Sensor Network (WSN) has been proposed to achieve a minimal selection of malicious nodes by introducing a dynamic collection window period to the protocol's semantics. However, its selection scheme suffers substantial packet losses due to the utilization of a single distance based parameter for node selection. In this paper, we propose a Fuzzy-based Geographic Forwarding protocol (FuGeF) to minimize packet loss, while maintaining performance. The FuGeF utilizes a new form of dynamism and introduces three selection parameters: remaining energy, connectivity cost, and progressive distance, as well as a Fuzzy Logic System (FLS) for node selection. These introduced mechanisms ensure the appropriate selection of a non-malicious node. Extensive simulation experiments have been conducted to evaluate the performance of the proposed FuGeF protocol as compared to DWSIGF variants. The simulation results show that the proposed FuGeF outperforms the two DWSIGF variants (DWSIGF-P and DWSIGF-R) in terms of packet delivery.

Interfacial processes in the Pd/a-Ge:H system

NASA Astrophysics Data System (ADS)

Edelman, F.; Cytermann, C.; Brener, R.; Eizenberg, M.; Weil, R.; Beyer, W.

1993-06-01

The kinetics of phase transformation has been studied in a two-layer structure of Pd/a-Ge:H after vacuum annealing at temperatures from 180 to 500°C. The a-Ge:H was deposited at 250°C on both c-Si and cleaved NaCl substrates in an RF glow discharge from a GeH 4/H 2 mixture. It was found that, similarly to the Pd/c-Ge and the Pd/a-Ge (e-gun deposited) systems, in the case of 0.15-0.2 μm Pd/0.6-1.0 μm a-Ge:H interfacial germanides formed first through the production of Pd 2Ge (plus a small amount of PdGe), and then PdGe was produced. The growth of both compounds was found to be diffusion-controlled. The nonreacted a-Ge:H layer beneath the germanide overlayer crystallized at 400-500°C. A reverse sequence of germanides formation was revealed in the case of 50 nm Pd/30 nm a-Ge:H, studied by in situ heat treatment in the TEM utilizing non-supported samples. The first germanide detected was PdGe and then, as a result of PdGe and Ge reaction or the PdGe decomposition, Pd 2Ge formed. The temperature dependence of the incubation time before the first ˜ 10 nm PdGe grains formed, followed an Arrhenius curve with an activation energy of 1.45 eV.

Smart Grid Enabled EVSE

DOE Office of Scientific and Technical Information (OSTI.GOV)

None, None

2015-01-12

The combined team of GE Global Research, Federal Express, National Renewable Energy Laboratory, and Consolidated Edison has successfully achieved the established goals contained within the Department of Energy’s Smart Grid Capable Electric Vehicle Supply Equipment funding opportunity. The final program product, shown charging two vehicles in Figure 1, reduces by nearly 50% the total installed system cost of the electric vehicle supply equipment (EVSE) as well as enabling a host of new Smart Grid enabled features. These include bi-directional communications, load control, utility message exchange and transaction management information. Using the new charging system, Utilities or energy service providers willmore » now be able to monitor transportation related electrical loads on their distribution networks, send load control commands or preferences to individual systems, and then see measured responses. Installation owners will be able to authorize usage of the stations, monitor operations, and optimally control their electricity consumption. These features and cost reductions have been developed through a total system design solution.« less

Gradient Evolution-based Support Vector Machine Algorithm for Classification

NASA Astrophysics Data System (ADS)

Zulvia, Ferani E.; Kuo, R. J.

2018-03-01

This paper proposes a classification algorithm based on a support vector machine (SVM) and gradient evolution (GE) algorithms. SVM algorithm has been widely used in classification. However, its result is significantly influenced by the parameters. Therefore, this paper aims to propose an improvement of SVM algorithm which can find the best SVMs’ parameters automatically. The proposed algorithm employs a GE algorithm to automatically determine the SVMs’ parameters. The GE algorithm takes a role as a global optimizer in finding the best parameter which will be used by SVM algorithm. The proposed GE-SVM algorithm is verified using some benchmark datasets and compared with other metaheuristic-based SVM algorithms. The experimental results show that the proposed GE-SVM algorithm obtains better results than other algorithms tested in this paper.

Flux and spectral variation characteristics of 3C 454.3 at the GeV band

NASA Astrophysics Data System (ADS)

Zhang, Hai-Ming; Zhang, Jin; Lu, Rui-Jing; Yi, Ting-Feng; Huang, Xiao-Li; Liang, En-Wei

2018-04-01

We analyze the long-term lightcurve of 3C 454.3 observed with Fermi/LAT and investigate its relation to flux in the radio, optical and X-ray bands. By fitting the 1-day binned GeV lightcurve with multiple Gaussian functions (MGF), we propose that the typical variability timescale in the GeV band is 1–10 d. The GeV flux variation is accompanied by the spectral variation characterized as flux-tracking, i.e., “harder when brighter.” The GeV flux is correlated with the optical and X-ray fluxes, and a weak correlation between γ-ray flux and radio flux is also observed. The γ-ray flux is not correlated with the optical linear polarization degree for the global lightcurves, but they show a correlation for the lightcurves before MJD 56000. The power density spectrum of the global lightcurve shows an obvious turnover at ∼ 7.7 d, which may indicate a typical variability timescale of 3C 454.3 in the γ-ray band. This is also consistent with the derived timescales by fitting the global lightcurve with MGF. The spectral evolution and an increase in the optical linear polarization degree along with the increase in γ-ray flux may indicate that the radiation particles are accelerated and the magnetic field is ordered by the shock processes during the outbursts. In addition, the nature of 3C 454.3 may be consistent with a self-organized criticality system, similar to Sagittarius A*, and thus the outbursts could be from plasmoid ejections driven by magnetic reconnection. This may further support the idea that the jet radiation regions are magnetized.

Requirements for Kalman filtering on the GE-701 whole word computer

NASA Technical Reports Server (NTRS)

Pines, S.; Schmidt, S. F.

1978-01-01

The results of a study to determine scaling, storage, and word length requirements for programming the Kalman filter on the GE-701 Whole Word Computer are reported. Simulation tests are presented which indicate that the Kalman filter, using a square root formulation with process noise added, utilizing MLS, radar altimeters, and airspeed as navigation aids, may be programmed for the GE-701 computer to successfully navigate and control the Boeing B737-100 during landing approach, landing rollout, and turnoff. The report contains flow charts, equations, computer storage, scaling, and word length recommendations for the Kalman filter on the GE-701 Whole Word computer.

22nd Annual Logistics Conference and Exhibition

DTIC Science & Technology

2006-04-20

Prognostics & Health Management at GE Dr. Piero P.Bonissone Industrial AI Lab GE Global Research NCD Select detection model Anomaly detection results...Mode 213 x Failure mode histogram 2130014 Anomaly detection from event-log data Anomaly detection from event-log data Diagnostics/ Prognostics Using...Failure Monitoring & AssessmentTactical C4ISR Sense Respond 7 •Diagnostics, Prognostics and health management

Research Report for GeSci Meta-Review of ICT in Education: Phase Two

ERIC Educational Resources Information Center

LeBaron, John; McDonough, Elizabeth

2009-01-01

This second phase of a comprehensive meta-review of educational ICT research and practice addresses global developments reflected in the research and development literature appearing since 2006. Completed in April 2009, the Phase One (P1) report comprised a synopsis of research related to GeSci's five thematic inquiry priorities. Preliminary…

75 FR 1819 - GE-Hitachi Global Laser Enrichment LLC; (GLE Commercial Facility); Notice of Receipt of...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-01-13

... Energy Americas LLC (GEH), which is a wholly owned subsidiary of GE-Hitachi Nuclear Energy Holdings LLC..., 2009, the NRC published notice of its intent to prepare an Environmental Impact Statement (EIS) on the... on the issuance of a license is completed. See Notice of Intent to Prepare an Environmental Impact...

Using Listening Journals to Raise Awareness of Global Englishes in ELT

ERIC Educational Resources Information Center

Galloway, Nicola; Rose, Heath

2014-01-01

With the increasing use of English as a Lingua Franca (ELF), it is no longer appropriate to associate English purely with "native-speaking" nations, but with a global community of users. This article reports on the use of listening journals in ELT to expose students to global Englishes (GE), a field that reflects the current global use…

Longitudinal Double-Spin Asymmetry for Inclusive Jet Production in p→+p→ Collisions at s=200GeV

NASA Astrophysics Data System (ADS)

Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baudot, J.; Baumgart, S.; Belaga, V. V.; Bellingeri-Laurikainen, A.; Bellwied, R.; Benedosso, F.; Betts, R. R.; Bhardwaj, S.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Blyth, S.-L.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Brandin, A. V.; Burton, T. P.; Bystersky, M.; Cai, X. Z.; Caines, H.; Calderón de La Barca Sánchez, M.; Callner, J.; Catu, O.; Cebra, D.; Cervantes, M. C.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Christie, W.; Chung, S. U.; Clarke, R. F.; Codrington, M. J. M.; Coffin, J. P.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; de Moura, M. M.; Dedovich, T. G.; Dephillips, M.; Derevschikov, A. A.; Didenko, L.; Dietel, T.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, F.; Dunin, V. B.; Dunlop, J. C.; Dutta Mazumdar, M. R.; Edwards, W. R.; Efimov, L. G.; Elhalhuli, E.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fu, J.; Gagliardi, C. A.; Gaillard, L.; Ganti, M. S.; Garcia-Solis, E.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. N.; Gos, H.; Grebenyuk, O.; Grosnick, D.; Grube, B.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, A.; Gupta, N.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Henry, T. W.; Heppelmann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D. J.; Hollis, R. S.; Horner, M. J.; Huang, H. Z.; Hughes, E. W.; Humanic, T. J.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jones, P. G.; Judd, E. G.; Kabana, S.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu.; Kiryluk, J.; Kisiel, A.; Kislov, E. M.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kouchpil, V.; Kowalik, K. L.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Kuhn, C.; Kulikov, A. I.; Kumar, A.; Kurnadi, P.; Kuznetsov, A. A.; Lamont, M. A. C.; Landgraf, J. M.; Lange, S.; Lapointe, S.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C.-H.; Lehocka, S.; Levine, M. J.; Li, C.; Li, Q.; Li, Y.; Lin, G.; Lin, X.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Longacre, R. S.; Love, W. A.; Lu, Y.; Ludlam, T.; Lynn, D.; Ma, G. L.; Ma, J. G.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Matis, H. S.; Matulenko, Yu. A.; McShane, T. S.; Meschanin, A.; Millane, J.; Miller, M. L.; Minaev, N. G.; Mioduszewski, S.; Mischke, A.; Mitchell, J.; Mohanty, B.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Nepali, C.; Netrakanti, P. K.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okorokov, V.; Olson, D.; Pachr, M.; Pal, S. K.; Panebratsev, Y.; Pavlinov, A. I.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Planinic, M.; Pluta, J.; Poljak, N.; Porile, N.; Poskanzer, A. M.; Potekhin, M.; Potrebenikova, E.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Pruthi, N. K.; Putschke, J.; Qattan, I. A.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Relyea, D.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Sazhin, P. S.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shen, W. Q.; Shimanskiy, S. S.; Sichtermann, E. P.; Simon, F.; Singaraju, R. N.; Skoby, M. J.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Speltz, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Staszak, D.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Z.; Surrow, B.; Symons, T. J. M.; Szanto de Toledo, A.; Takahashi, J.; Tang, A. H.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Timoshenko, S.; Tokarev, M.; Trainor, T. A.; Tram, V. N.; Trentalange, S.; Tribble, R. E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; van Buren, G.; van der Kolk, N.; van Leeuwen, M.; Vander Molen, A. M.; Varma, R.; Vasilevski, I. M.; Vasiliev, A. N.; Vernet, R.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Wada, M.; Waggoner, W. T.; Wang, F.; Wang, G.; Wang, J. S.; Wang, X. L.; Wang, Y.; Webb, J. C.; Westfall, G. D.; Whitten, C., Jr.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, J.; Wu, Y.; Xu, N.; Xu, Q. H.; Xu, Z.; Yepes, P.; Yoo, I.-K.; Yue, Q.; Yurevich, V. I.; Zawisza, M.; Zhan, W.; Zhang, H.; Zhang, W. M.; Zhang, Y.; Zhang, Z. P.; Zhao, Y.; Zhong, C.; Zhou, J.; Zoulkarneev, R.; Zoulkarneeva, Y.; Zubarev, A. N.; Zuo, J. X.

2008-06-01

We report a new STAR measurement of the longitudinal double-spin asymmetry ALL for inclusive jet production at midrapidity in polarized p+p collisions at a center-of-mass energy of s=200GeV. The data, which cover jet transverse momenta 5

Study of low dimensional SiGe island on Si for potential visible Metal-Semiconductor-Metal photodetector

NASA Astrophysics Data System (ADS)

Rahim, Alhan Farhanah Abd; Zainal Badri, Nur'Amirah; Radzali, Rosfariza; Mahmood, Ainorkhilah

2017-11-01

In this paper, an investigation of design and simulation of silicon germanium (SiGe) islands on silicon (Si) was presented for potential visible metal semiconductor metal (MSM) photodetector. The characterization of the performances in term of the structural, optical and electrical properties of the structures was analyzed from the simulation results. The project involves simulation using SILVACO Technology Computer Aided Design (TCAD) tools. The different structures of the silicon germanium (SiGe) island on silicon substrate were created, which were large SiGe, small SiGe, combination SiGe and bulk Ge. All the structures were tested for potential Metal Semiconductor Metal (MSM) photodetector. The extracted data such as current versus voltage characteristic, current gain and spectral response were obtained using ATLAS SILVACO tools. The performance of SiGe island structures and bulk Ge on Si substrate as (MSM) photodetector was evaluated by photo and dark current-voltage (I-V) characteristics. It was found that SiGe islands exhibited higher energy band gap compared to bulk Ge. The SiGe islands current-voltage characteristics showed improved current gain compared to bulk Ge. Specifically the enhancement of the islands gain was contributed by the enhanced photo currents and lower dark currents. The spectral responses of the SiGe islands showed peak response at 590 nm (yellow) which is at the visible wavelength. This shows the feasibility of the SiGe islands to be utilized for visible photodetections.

Enhancing the Introductory Astronomical Experience with the Use of a Tablet and Telescope

ERIC Educational Resources Information Center

Gill, Robert M.; Burin, Michael J.

2013-01-01

College and university general education (GE) classes are designed to broaden the understanding of all college and university students in areas outside their major interest. However, most GE classes are lecture type and do not facilitate hands-on experimental or observational activities related to the specific subject matter. Utilizing astronomy…

Utilization of founder lines for improved Citrus biotechnology via RMCE

USDA-ARS?s Scientific Manuscript database

On October 1st 2011 the CRB chose to fund a unique research project, the development of citrus cultivars specifically for genetic engineering (GE). The objective of this research was to develop GE citrus ‘Founder Lines’ containing DNA sequences that will allow the precise insertion of genes for de...

Self-limited growth of Si on B atomic-layer formed Ge(1 0 0) by ultraclean low-pressure CVD system

NASA Astrophysics Data System (ADS)

Yokogawa, Takashi; Ishibashi, Kiyohisa; Sakuraba, Masao; Murota, Junichi; Inokuchi, Yasuhiro; Kunii, Yasuo; Kurokawa, Harushige

2008-07-01

Utilizing BCl 3 reaction on Ge(1 0 0) and subsequent Si epitaxial growth by SiH 4 reaction at 300 °C, B atomic-layer doping in Si/Ge(1 0 0) heterostructure was investigated. Cl atoms on the B atomic-layer formed Ge(1 0 0) scarcely affect upon the SiH 4 reaction. It is also found that Si atom amount deposited by SiH 4 reaction on Ge(1 0 0) is effectively enhanced by the existence of B atomic layer and the deposition rate tends to decrease at around 2-3 atomic layers which is three times larger than that in the case without B. The results of angle-resolved X-ray photoelectron spectroscopy show that most B atoms are incorporated at the heterointerface between the Si and Ge.

Elemental boron-doped p(+)-SiGe layers grown by molecular beam epitaxy for infrared detector applications

NASA Technical Reports Server (NTRS)

Lin, T. L.; George, T.; Jones, E. W.; Ksendzov, A.; Huberman, M. L.

1992-01-01

SiGe/Si heterojunction internal photoemission (HIP) detectors have been fabricated utilizing molecular beam epitaxy of p(+)-SiGe layers on p(-)-Si substrates. Elemental boron from a high-temperature effusion cell was used as the dopant source during MBE growth, and high doping concentrations have been achieved. Strong infrared absorption, mainly by free-carrier absorption, was observed for the degenerately doped SiGe layers. The use of elemental boron as the dopant source allows a low MBE growth temperature, resulting in improved crystalline quality and smooth surface morphology of the Si(0.7)Ge(0.3) layers. Nearly ideal thermionic emission dark current characteristics have been obtained. Photoresponse of the HIP detectors in the long-wavelength infrared regime has been demonstrated.

ϕ Meson Spin Alignment and the Azimuthal Angle Dependence of Λ (Λ) Polarization in Au+Au collisions at RHIC

NASA Astrophysics Data System (ADS)

Tu, Biao

2018-02-01

Initial large global angular momentum in non-central relativistic heavy-ion collisions can produce strong vorticity, and through the spin-orbit coupling, causes the spin of particles to align with the system's global angular momentum. We present the azimuthal angle dependent (relative to the reaction plane) polarization for Λ and Λ in mid-central Au+Au collisions at = 200 GeV. We also present the ϕ meson spin alignment parameter, ρ00 in Au+Au collisions at = 19.6, 27, 39, 62.4 and 200 GeV. The implications of the results are discussed.

Global analysis of the pMSSM in light of the Fermi GeV excess: prospects for the LHC Run-II and astroparticle experiments

NASA Astrophysics Data System (ADS)

Bertone, Gianfranco; Calore, Francesca; Caron, Sascha; Ruiz, Roberto; Kim, Jong Soo; Trotta, Roberto; Weniger, Christoph

2016-04-01

We present a new global fit of the 19-dimensional phenomenological Minimal Supersymmetric Standard Model (pMSSM-19) that complies with all the latest experimental results from dark matter indirect, direct and accelerator dark matter searches. We show that the model provides a satisfactory explanation of the excess of gamma rays from the Galactic centre observed by the Fermi Large Area Telescope, assuming that it is produced by the annihilation of neutralinos in the Milky Way halo. We identify two regions that pass all the constraints: the first corresponds to neutralinos with a mass 0~ 80-10 GeV annihilating into WW with a branching ratio of 95%; the second to heavier neutralinos, with mass 0~ 180-20 GeV annihilating into bar tt with a branching ratio of 87%. We show that neutralinos compatible with the Galactic centre GeV excess will soon be within the reach of LHC run-II—notably through searches for charginos and neutralinos, squarks and light smuons—and of Xenon1T, thanks to its unprecedented sensitivity to spin-dependent cross-section off neutrons.

The effect of core stability and general exercise on abdominal muscle thickness in non-specific chronic low back pain using ultrasound imaging.

PubMed

Shamsi, MohammadBagher; Sarrafzadeh, Javad; Jamshidi, Aliashraf; Zarabi, Vida; Pourahmadi, Mohammad Reza

2016-05-01

There is a controversy regarding whether core stability exercise (CSE) is more effective than general exercise (GE) for chronic LBP. To compare different exercises regarding their effect on improving back strength and stability, performance of abdominal muscles is a useful index. Ultrasound imaging for measuring muscle thickness could be used to assess muscle performance. The aim of this study was to compare CSE and GE in chronic LBP using ultrasound imaging for measurement of thickness of the deep stabilizing and main global trunk muscles in non-specific chronic LBP. Each program included 16 training sessions three times a week. Using ultrasound imaging, four transabdominal muscle thickness were measured before and after the intervention. Disability and pain were measured as secondary outcomes. After the intervention on participants (n = 43), a significant increase in muscle thickness (hypertrophy) was seen only in right and left rectus abdominis in the GE group, but significant difference to the CSE group was only on the right side. Disability and pain reduced within the groups without a significant difference in the change between them. The present results provided evidence that only GE increased right and left rectus muscle thickness. The only significant difference between CSE and GE groups was the right rectus thickness. As rectus is a global muscle, the effect of GE on strength improvement (one side stronger than the other) may have a negative effect on motor control of lumbopelvic muscles and possibly increase the risk of back pain occurring or becoming worse, though this was not observed in the present study.

Fracture in Hydrogen-Implanted Germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mazen, F.; Tauzin, A.; Sanchez, L.

2008-11-03

We have studied the mechanism of fracture in hydrogen-implanted Ge. First, the as-implanted Ge state and its evolution during subsequent annealing were characterized via TEM and FTIR-MIR spectroscopy. Results showed that the extended defects formation and growth follow the same basic mechanism in Ge as in Si, which is the reference material. Nevertheless, the global damage level in the implanted Ge layer is higher compared to Si. Second, the fracture step was studied via the fracture kinetics analysis, SIMS and AFM on the transferred layer. An activation energy comparable to the reported data from blistering studies was obtained. Just likemore » in Si, the Cmax of H in Ge measured via SIMS was found to decrease during the fracture anneal. This decrease is associated with the formation of gaseous H{sub 2} that pressurizes the internal cavities and then contributes to the fracture. Finally, a high roughness of the Ge transferred layer was measured, which results from the large thickness of the implantation damaged zone.« less

Structural, Electronic, and Thermodynamic Properties of Tetragonal t-SixGe3−xN4

PubMed Central

Han, Chenxi; Chai, Changchun; Fan, Qingyang; Yang, Jionghao; Yang, Yintang

2018-01-01

The structural, mechanical, anisotropic, electronic, and thermal properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 in the tetragonal phase are systematically investigated in the present work. The mechanical stability is proved by the elastic constants of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4. Moreover, they all demonstrate brittleness, because B/G < 1.75, and v < 0.26. The elastic anisotropy of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 is characterized by Poisson’s ratio, Young’s modulus, the percentage of elastic anisotropy for bulk modulus AB, the percentage of elastic anisotropy for shear modulus AG, and the universal anisotropic index AU. The electronic structures of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are all wide band gap semiconductor materials, with band gaps of 4.26 eV, 3.94 eV, 3.83 eV, and 3.25 eV, respectively, when using the Heyd-Scuseria-Ernzerhof (HSE06) hybrid functional. Moreover, t-Ge3N4 is a quasi-direct gap semiconductor material. The thermodynamic properties of t-Si3N4, t-Si2GeN4, t-SiGe2N4, and t-Ge3N4 are investigated utilizing the quasi-harmonic Debye model. The effects of temperature and pressure on the thermal expansion coefficient, heat capacity, Debye temperature, and Grüneisen parameters are discussed in detail. PMID:29518943

Combined search for the standard model Higgs boson decaying to bb using the D0 run II data set.

PubMed

Abazov, V M; Abbott, B; Acharya, B S; Adams, M; Adams, T; Alexeev, G D; Alkhazov, G; Alton, A; Alverson, G; Askew, A; Atkins, S; Augsten, K; Avila, C; Badaud, F; Bagby, L; Baldin, B; Bandurin, D V; Banerjee, S; Barberis, E; Baringer, P; Bartlett, J F; Bassler, U; Bazterra, V; Bean, A; Begalli, M; Bellantoni, L; Beri, S B; Bernardi, G; Bernhard, R; Bertram, I; Besançon, M; Beuselinck, R; Bhat, P C; Bhatia, S; Bhatnagar, V; Blazey, G; Blessing, S; Bloom, K; Boehnlein, A; Boline, D; Boos, E E; Borissov, G; Bose, T; Brandt, A; Brandt, O; Brock, R; Bross, A; Brown, D; Brown, J; Bu, X B; Buehler, M; Buescher, V; Bunichev, V; Burdin, S; Buszello, C P; Camacho-Pérez, E; Casey, B C K; Castilla-Valdez, H; Caughron, S; Chakrabarti, S; Chakraborty, D; Chan, K M; Chandra, A; Chapon, E; Chen, G; Chevalier-Théry, S; Cho, D K; Cho, S W; Choi, S; Choudhary, B; Cihangir, S; Claes, D; Clutter, J; Cooke, M; Cooper, W E; Corcoran, M; Couderc, F; Cousinou, M-C; Croc, A; Cutts, D; Das, A; Davies, G; de Jong, S J; De La Cruz-Burelo, E; Déliot, F; Demina, R; Denisov, D; Denisov, S P; Desai, S; Deterre, C; Devaughan, K; Diehl, H T; Diesburg, M; Ding, P F; Dominguez, A; Dubey, A; Dudko, L V; Duggan, D; Duperrin, A; Dutt, S; Dyshkant, A; Eads, M; Edmunds, D; Ellison, J; Elvira, V D; Enari, Y; Evans, H; Evdokimov, A; Evdokimov, V N; Facini, G; Feng, L; Ferbel, T; Fiedler, F; Filthaut, F; Fisher, W; Fisk, H E; Fortner, M; Fox, H; Fuess, S; Garcia-Bellido, A; García-González, J A; García-Guerra, G A; Gavrilov, V; Gay, P; Geng, W; Gerbaudo, D; Gerber, C E; Gershtein, Y; Ginther, G; Golovanov, G; Goussiou, A; Grannis, P D; Greder, S; Greenlee, H; Grenier, G; Gris, Ph; Grivaz, J-F; Grohsjean, A; Grünendahl, S; Grünewald, M W; Guillemin, T; Gutierrez, G; Gutierrez, P; Hagopian, S; Haley, J; Han, L; Harder, K; Harel, A; Hauptman, J M; Hays, J; Head, T; Hebbeker, T; Hedin, D; Hegab, H; Heinson, A P; Heintz, U; Hensel, C; Heredia De La Cruz, I; Herner, K; Hesketh, G; Hildreth, M D; Hirosky, R; Hoang, T; Hobbs, J D; Hoeneisen, B; Hogan, J; Hohlfeld, M; Howley, I; Hubacek, Z; Hynek, V; Iashvili, I; Ilchenko, Y; Illingworth, R; Ito, A S; Jabeen, S; Jaffré, M; Jayasinghe, A; Jeong, M S; Jesik, R; Jiang, P; Johns, K; Johnson, E; Johnson, M; Jonckheere, A; Jonsson, P; Joshi, J; Jung, A W; Juste, A; Kaadze, K; Kajfasz, E; Karmanov, D; Kasper, P A; Katsanos, I; Kehoe, R; Kermiche, S; Khalatyan, N; Khanov, A; Kharchilava, A; Kharzheev, Y N; Kiselevich, I; Kohli, J M; Kozelov, A V; Kraus, J; Kulikov, S; Kumar, A; Kupco, A; Kurča, T; Kuzmin, V A; Lammers, S; Landsberg, G; Lebrun, P; Lee, H S; Lee, S W; Lee, W M; Lei, X; Lellouch, J; Li, D; Li, H; Li, L; Li, Q Z; Lim, J K; Lincoln, D; Linnemann, J; Lipaev, V V; Lipton, R; Liu, H; Liu, Y; Lobodenko, A; Lokajicek, M; Lopes de Sa, R; Lubatti, H J; Luna-Garcia, R; Lyon, A L; Maciel, A K A; Madar, R; Magaña-Villalba, R; Malik, S; Malyshev, V L; Maravin, Y; Martínez-Ortega, J; McCarthy, R; McGivern, C L; Meijer, M M; Melnitchouk, A; Menezes, D; Mercadante, P G; Merkin, M; Meyer, A; Meyer, J; Miconi, F; Mondal, N K; Mulhearn, M; Nagy, E; Naimuddin, M; Narain, M; Nayyar, R; Neal, H A; Negret, J P; Neustroev, P; Nguyen, H T; Nunnemann, T; Orduna, J; Osman, N; Osta, J; Padilla, M; Pal, A; Parashar, N; Parihar, V; Park, S K; Partridge, R; Parua, N; Patwa, A; Penning, B; Perfilov, M; Peters, Y; Petridis, K; Petrillo, G; Pétroff, P; Pleier, M-A; Podesta-Lerma, P L M; Podstavkov, V M; Popov, A V; Prewitt, M; Price, D; Prokopenko, N; Qian, J; Quadt, A; Quinn, B; Rangel, M S; Ranjan, K; Ratoff, P N; Razumov, I; Renkel, P; Ripp-Baudot, I; Rizatdinova, F; Rominsky, M; Ross, A; Royon, C; Rubinov, P; Ruchti, R; Sajot, G; Salcido, P; Sánchez-Hernández, A; Sanders, M P; Santos, A S; Savage, G; Sawyer, L; Scanlon, T; Schamberger, R D; Scheglov, Y; Schellman, H; Schlobohm, S; Schwanenberger, C; Schwienhorst, R; Sekaric, J; Severini, H; Shabalina, E; Shary, V; Shaw, S; Shchukin, A A; Shivpuri, R K; Simak, V; Skubic, P; Slattery, P; Smirnov, D; Smith, K J; Snow, G R; Snow, J; Snyder, S; Söldner-Rembold, S; Sonnenschein, L; Soustruznik, K; Stark, J; Stoyanova, D A; Strauss, M; Suter, L; Svoisky, P; Takahashi, M; Titov, M; Tokmenin, V V; Tsai, Y-T; Tschann-Grimm, K; Tsybychev, D; Tuchming, B; Tully, C; Uvarov, L; Uvarov, S; Uzunyan, S; Van Kooten, R; van Leeuwen, W M; Varelas, N; Varnes, E W; Vasilyev, I A; Verdier, P; Verkheev, A Y; Vertogradov, L S; Verzocchi, M; Vesterinen, M; Vilanova, D; Vokac, P; Wahl, H D; Wang, M H L S; Wang, R-J; Warchol, J; Watts, G; Wayne, M; Weichert, J; Welty-Rieger, L; White, A; Wicke, D; Williams, M R J; Wilson, G W; Wobisch, M; Wood, D R; Wyatt, T R; Xie, Y; Yamada, R; Yang, S; Yang, W-C; Yasuda, T; Yatsunenko, Y A; Ye, W; Ye, Z; Yin, H; Yip, K; Youn, S W; Yu, J M; Zennamo, J; Zhao, T; Zhao, T G; Zhou, B; Zhu, J; Zielinski, M; Zieminska, D; Zivkovic, L

2012-09-21

We present the results of the combination of searches for the standard model Higgs boson produced in association with a W or Z boson and decaying into bb using the data sample collected with the D0 detector in pp collisions at √s = 1.96 TeV at the Fermilab Tevatron Collider. We derive 95% C.L. upper limits on the Higgs boson cross section relative to the standard model prediction in the mass range 100 GeV ≤ M(H) ≤ 150 GeV, and we exclude Higgs bosons with masses smaller than 102 GeV at the 95% C.L. In the mass range 120 GeV ≤ M(H) ≤145 GeV, the data exhibit an excess above the background prediction with a global significance of 1.5 standard deviations, consistent with the expectation in the presence of a standard model Higgs boson.

Cosmic microwave background constraints for global strings and global monopoles

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lopez-Eiguren, Asier; Lizarraga, Joanes; Urrestilla, Jon

We present the first cosmic microwave background (CMB) power spectra from numerical simulations of the global O( N ) linear σ-model, with N =2,3, which have global strings and monopoles as topological defects. In order to compute the CMB power spectra we compute the unequal time correlators (UETCs) of the energy-momentum tensor, showing that they fall off at high wave number faster than naive estimates based on the geometry of the defects, indicating non-trivial (anti-)correlations between the defects and the surrounding Goldstone boson field. We obtain source functions for Einstein-Boltzmann solvers from the UETCs, using a recently developed method thatmore » improves the modelling at the radiation-matter transition. We show that the interpolation function that mimics the transition is similar to other defect models, but not identical, confirming the non-universality of the interpolation function. The CMB power spectra for global strings and global monopoles have the same overall shape as those obtained using the non-linear σ-model approximation, which is well captured by a large- N calculation. However, the amplitudes are larger than the large- N calculation would naively predict, and in the case of global strings much larger: a factor of 20 at the peak. Finally we compare the CMB power spectra with the latest CMB data in other to put limits on the allowed contribution to the temperature power spectrum at multipole l = 10 of 1.7% for global strings and 2.4% for global monopoles. These limits correspond to symmetry-breaking scales of 2.9× 10{sup 15} GeV (6.3× 10{sup 14} GeV with the expected logarithmic scaling of the effective string tension between the simulation time and decoupling) and 6.4× 10{sup 15} GeV respectively. The bound on global strings is a significant one for the ultra-light axion scenario with axion masses m {sub a} ∼< 10{sup −28} eV . These upper limits indicate that gravitational waves from global topological defects will not be observable at the gravitational wave observatory LISA.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jung, Hyeyoung; Allan, Phoebe K.; Hu, Yan-Yan

Metallic germanium is a promising anode material in secondary lithium-ion batteries (LIBs) due to its high theoretical capacity (1623 mAh/g) and low operating voltage, coupled with the high lithium-ion diffusivity and electronic conductivity of lithiated Ge. Here, the lithiation mechanism of micron-sized Ge anodes has been investigated with X-ray diffraction (XRD), pair distribution function (PDF) analysis, and in-/ex-situ high-resolution Li-7 solid-state nuclear magnetic resonance (NMR), utilizing the structural information and spectroscopic fingerprints obtained by characterizing a series of relevant Li(x)Gey model compounds. In contrast to previous work, which postulated the formation of Li9Ge4 upon initial lithiation, we show that crystallinemore » Ge first reacts to form a mixture of amorphous and crystalline Li7Ge3 (space group P32(1)2). Although Li7Ge3 was proposed to be stable in a recent theoretical study of the Li-Ge phase diagram (Morris, A. J.; Grey, C. P.; Pickard, C. J. Phys. Rev. B: Condens. Matter Mater. Phys. 2014, 90, 054111), it had not been identified in prior experimental studies. Further lithiation results in the transformation of Li7Ge3, via a series of disordered phases with related structural motifs, to form a phase that locally resembles Li7Ge2, a process that involves the gradual breakage of the Ge-Ge bonds in the Ge-Ge dimers (dumbbells) on lithiation. Crystalline Li15Ge4 then grows, with an overlithiated phase, Li15+delta Ge4, being formed at the end of discharge. This study provides comprehensive experimental evidence, by using techniques that probe short-, medium-, and long-range order, for the structural transformations that occur on electrochemical lithiation of Ge; the results are consistent with corresponding theoretical studies regarding stable lithiated LixGey phases.« less

III-V/Ge MOS device technologies for low power integrated systems

NASA Astrophysics Data System (ADS)

Takagi, S.; Noguchi, M.; Kim, M.; Kim, S.-H.; Chang, C.-Y.; Yokoyama, M.; Nishi, K.; Zhang, R.; Ke, M.; Takenaka, M.

2016-11-01

CMOS utilizing high mobility III-V/Ge channels on Si substrates is expected to be one of the promising devices for high performance and low power integrated systems in the future technology nodes, because of the enhanced carrier transport properties. In addition, Tunneling-FETs (TFETs) using Ge/III-V materials are regarded as one of the most important steep slope devices for the ultra-low power applications. In this paper, we address the device and process technologies of Ge/III-V MOSFETs and TFETs on the Si CMOS platform. The channel formation, source/drain (S/D) formation and gate stack engineering are introduced for satisfying the device requirements. The plasma post oxidation to form GeOx interfacial layers is a key gate stack technology for Ge CMOS. Also, direct wafer bonding of ultrathin body quantum well III-V-OI channels, combined with Tri-gate structures, realizes high performance III-V n-MOSFETs on Si. We also demonstrate planar-type InGaAs and Ge/strained SOI TFETs. The defect-less p+-n source junction formation with steep impurity profiles is a key for high performance TFET operation.

Relaxed germanium-tin P-channel tunneling field-effect transistors fabricated on Si: impacts of Sn composition and uniaxial tensile strain

NASA Astrophysics Data System (ADS)

Han, Genquan; Wang, Yibo; Liu, Yan; Wang, Hongjuan; Liu, Mingshan; Zhang, Chunfu; Zhang, Jincheng; Cheng, Buwen; Hao, Yue

2015-05-01

In this work, relaxed GeSn p-channel tunneling field-effect transistors (pTFETs) with various Sn compositions are fabricated on Si. Enhancement of on-state current ION with the increase of Sn composition is observed in transistors, due to the reduction of direct bandgap EG. Ge0.93Sn0.07 and Ge0.95Sn0.05 pTFETs achieve 110% and 75% enhancement in ION, respectively, compared to Ge0.97Sn0.03 devices, at VGS - VTH = VDS = - 1.0 V. For the first time, ION enhancement in GeSn pTFET utilizing uniaxial tensile strain is reported. By applying 0.14% uniaxial tensile strain along [110] channel direction, Ge0.95Sn0.05 pTFETs achieve 12% ION improvement, over unstrained control devices at VGS - VTH = VDS = - 1.0 V. Theoretical study demonstrates that uniaxial tensile strain leads to the reduction of direct EG and affects the reduced tunneling mass, which bring the GBTBT rising, benefiting the tunneling current enhancement in GeSn TFETs.

Investigations of rapid thermal annealing induced structural evolution of ZnO: Ge nanocomposite thin films via GISAXS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ceylan, Abdullah, E-mail: aceylanabd@yahoo.com; Ozcan, Yusuf; Orujalipoor, Ilghar

2016-06-07

In this work, we present in depth structural investigations of nanocomposite ZnO: Ge thin films by utilizing a state of the art grazing incidence small angle x-ray spectroscopy (GISAXS) technique. The samples have been deposited by sequential r.f. and d.c. sputtering of ZnO and Ge thin film layers, respectively, on single crystal Si(100) substrates. Transformation of Ge layers into Ge nanoparticles (Ge-np) has been initiated by ex-situ rapid thermal annealing of asprepared thin film samples at 600 °C for 30, 60, and 90 s under forming gas atmosphere. A special attention has been paid on the effects of reactive and nonreactivemore » growth of ZnO layers on the structural evolution of Ge-np. GISAXS analyses have been performed via cylindrical and spherical form factor calculations for different nanostructure types. Variations of the size, shape, and distributions of both ZnO and Ge nanostructures have been determined. It has been realized that GISAXS results are not only remarkably consistent with the electron microscopy observations but also provide additional information on the large scale size and shape distribution of the nanostructured components.« less

New constraints and discovery potential of sub-GeV dark matter with xenon detectors

NASA Astrophysics Data System (ADS)

McCabe, Christopher

2017-08-01

Existing xenon dark matter (DM) direct detection experiments can probe the DM-nucleon interaction of DM with a sub-GeV mass through a search for photon emission from the recoiling xenon atom. We show that LUX's constraints on sub-GeV DM, which utilize the scintillation (S1) and ionization (S2) signals, are approximately 3 orders of magnitude more stringent than previous xenon constraints in this mass range, derived from the XENON10 and XENON100 S2-only searches. The new LUX constraints provide the most stringent direct detection constraints for DM particles with a mass below 0.5 GeV. In addition, the photon emission signal in LUX and its successor LZ maintain the discrimination between background and signal events so that an unambiguous discovery of sub-GeV DM is possible. We show that LZ has the potential to reconstruct the DM mass with ≃20 % accuracy for particles lighter than 0.5 GeV.

Near-Infrared Photoluminescence Enhancement in Ge/CdS and Ge/ZnS Core/Shell Nanocrystals: Utilizing IV/II-VI Semiconductor Epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Guo, Yijun; Rowland, Clare E; Schaller, Richard D

2014-08-26

Ge nanocrystals have a large Bohr radius and a small, size-tunable band gap that may engender direct character via strain or doping. Colloidal Ge nanocrystals are particularly interesting in the development of near-infrared materials for applications in bioimaging, telecommunications and energy conversion. Epitaxial growth of a passivating shell is a common strategy employed in the synthesis of highly luminescent II–VI, III–V and IV–VI semiconductor quantum dots. Here, we use relatively unexplored IV/II–VI epitaxy as a way to enhance the photoluminescence and improve the optical stability of colloidal Ge nanocrystals. Selected on the basis of their relatively small lattice mismatch comparedmore » with crystalline Ge, we explore the growth of epitaxial CdS and ZnS shells using the successive ion layer adsorption and reaction method. Powder X-ray diffraction and electron microscopy techniques, including energy dispersive X-ray spectroscopy and selected area electron diffraction, clearly show the controllable growth of as many as 20 epitaxial monolayers of CdS atop Ge cores. In contrast, Ge etching and/or replacement by ZnS result in relatively small Ge/ZnS nanocrystals. The presence of an epitaxial II–VI shell greatly enhances the near-infrared photoluminescence and improves the photoluminescence stability of Ge. Ge/II–VI nanocrystals are reproducibly 1–3 orders of magnitude brighter than the brightest Ge cores. Ge/4.9CdS core/shells show the highest photoluminescence quantum yield and longest radiative recombination lifetime. Thiol ligand exchange easily results in near-infrared active, water-soluble Ge/II–VI nanocrystals. We expect this synthetic IV/II–VI epitaxial approach will lead to further studies into the optoelectronic behavior and practical applications of Si and Ge-based nanomaterials.« less

Intelligent Extruder

DOE Office of Scientific and Technical Information (OSTI.GOV)

AlperEker; Mark Giammattia; Paul Houpt

''Intelligent Extruder'' described in this report is a software system and associated support services for monitoring and control of compounding extruders to improve material quality, reduce waste and energy use, with minimal addition of new sensors or changes to the factory floor system components. Emphasis is on process improvements to the mixing, melting and de-volatilization of base resins, fillers, pigments, fire retardants and other additives in the :finishing'' stage of high value added engineering polymer materials. While GE Plastics materials were used for experimental studies throughout the program, the concepts and principles are broadly applicable to other manufacturers materials. Themore » project involved a joint collaboration among GE Global Research, GE Industrial Systems and Coperion Werner & Pleiderer, USA, a major manufacturer of compounding equipment. Scope of the program included development of a algorithms for monitoring process material viscosity without rheological sensors or generating waste streams, a novel detection scheme for rapid detection of process upsets and an adaptive feedback control system to compensate for process upsets where at line adjustments are feasible. Software algorithms were implemented and tested on a laboratory scale extruder (50 lb/hr) at GE Global Research and data from a production scale system (2000 lb/hr) at GE Plastics was used to validate the monitoring and detection software. Although not evaluated experimentally, a new concept for extruder process monitoring through estimation of high frequency drive torque without strain gauges is developed and demonstrated in simulation. A plan to commercialize the software system is outlined, but commercialization has not been completed.« less

Off-shell amplitudes as boundary integrals of analytically continued Wilson line slope

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kotko, P.; Serino, M.; Stasto, A. M.

We consider a conformal complex singlet extension of the Standard Model with a Higgs portal interaction. The global U(1) symmetry of the complex singlet can be either broken or unbroken and we study each scenario. In the unbroken case, the global U(1) symmetry protects the complex singlet from decaying, leading to an ideal cold dark matter candidate with approximately 100 GeV mass along with a significant proportion of thermal relic dark matter abundance. In the broken case, we have developed a renormalization-scale optimization technique to significantly narrow the parameter space and in some situations, provide unique predictions for all themore » model’s couplings and masses. We have found there exists a second Higgs boson with a mass of approximately 550 GeV that mixes with the known 125 GeV Higgs with a large mixing angle sin θ ≈ 0.47 consistent with current experimental limits. The imaginary part of the complex singlet in the broken case could provide axion dark matter for a wide range of models. Upon including interactions of the complex scalar with an additional vector-like fermion, we explore the possibility of a diphoton excess in both the unbroken and the broken cases. In the unbroken case, the model can provide a natural explanation for diphoton excess if extra terms are introduced providing extra contributions to the singlet mass. In the broken case, we find a set of coupling solutions that yield a second Higgs boson of mass 720 GeV and an 830 GeV extra vector-like fermion F , which is able to address the 750 GeV LHC diphoton excess. We also provide criteria to determine the symmetry breaking pattern in both the Higgs and hidden sectors.« less

Conformal complex singlet extension of the Standard Model: scenario for dark matter and a second Higgs boson

NASA Astrophysics Data System (ADS)

Wang, Zhi-Wei; Steele, T. G.; Hanif, T.; Mann, R. B.

2016-08-01

We consider a conformal complex singlet extension of the Standard Model with a Higgs portal interaction. The global U(1) symmetry of the complex singlet can be either broken or unbroken and we study each scenario. In the unbroken case, the global U(1) symmetry protects the complex singlet from decaying, leading to an ideal cold dark matter candidate with approximately 100 GeV mass along with a significant proportion of thermal relic dark matter abundance. In the broken case, we have developed a renormalization-scale optimization technique to significantly narrow the parameter space and in some situations, provide unique predictions for all the model's couplings and masses. We have found there exists a second Higgs boson with a mass of approximately 550 GeV that mixes with the known 125 GeV Higgs with a large mixing angle sin θ ≈ 0.47 consistent with current experimental limits. The imaginary part of the complex singlet in the broken case could provide axion dark matter for a wide range of models. Upon including interactions of the complex scalar with an additional vector-like fermion, we explore the possibility of a diphoton excess in both the unbroken and the broken cases. In the unbroken case, the model can provide a natural explanation for diphoton excess if extra terms are introduced providing extra contributions to the singlet mass. In the broken case, we find a set of coupling solutions that yield a second Higgs boson of mass 720 GeV and an 830 GeV extra vector-like fermion F , which is able to address the 750 GeV LHC diphoton excess. We also provide criteria to determine the symmetry breaking pattern in both the Higgs and hidden sectors.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adare, A.

PHENIX measurements are presented for the cross section and double-helicity asymmetry (ALL) in inclusive π⁰ production at midrapidity from p+p collisions at √s = 510 GeV from data taken in 2012 and 2013 at the Relativistic Heavy Ion Collider. The next-to-leading-order perturbativequantum- chromodynamics theory calculation is in excellent agreement with the presented cross section results. The calculation utilized parton-to-pion fragmentation functions from the recent DSS14 global analysis, which prefer a smaller gluon-to-pion fragmentation function. The π⁰A LL results follow an increasingly positive asymmetry trend with pT and √s with respect to the predictions and are in excellent agreement with themore » latest global analysis results. This analysis incorporated earlier results on π0 and jet A LL, and suggested a positive contribution of gluon polarization to the spin of the proton ΔG for the gluon momentum fraction range x > 0.05. The data presented here extend to a currently unexplored region, down to x 0.01, and thus provide additional constraints on the value of ΔG.« less

Radiation measurement above the lunar surface by Kaguya gamma-ray spectrometer

NASA Astrophysics Data System (ADS)

Hasebe, Nobuyuki; Nagaoka, Hiroshi; Kusano, Hiroki; Hareyama, Matoko; Ideguchi, Yusuke; Shimizu, Sota; Shibamura, Eido

The lunar surface is filled with various ionizing radiations such as high energy galactic particles, albedo particles and secondary radiations of neutrons, gamma rays and other elementary particles. A high-resolution Kaguya Gamma-Ray Spectrometer (KGRS) was carried on the Japan’s lunar explorer SELENE (Kaguya), the largest lunar orbiter since the Apollo missions. The KGRS instrument employed, for the first time in lunar exploration, a high-purity Ge crystal to increase the identification capability of elemental gamma-ray lines. The Ge detector is surrounded by BGO and plastic counters as for anticoincidence shields. The KGRS measured gamma rays in the energy range from 200 keV to 13 MeV with high precision to determine the chemical composition of the lunar surface. It provided data on the abundance of major elements over the entire lunar surface. In addition to the gamma-ray observation by the KGRS, it successfully measured the global distribution of fast neutrons. In the energy spectra of gamma-rays observed by the KGRS, several saw-tooth- peaks of Ge are included, which are formed by the collision interaction of lunar fast neutrons with Ge atoms in the Ge crystal. With these saw-tooth-peaks analysis, global distribution of neutrons emitted from the lunara surface was successfully created, which was compared with the previous results obtained by Lunar Prospector neutron maps. Another anticoincidence counter, the plastic counter with 5 mm thickness, was used to veto radiation events mostly generated by charged particles. A single photomultiplier serves to count scintillation light from the plastic scintillation counter. The global map of counting rates observed by the plastic counter was also created, implying that the radiation counting rate implies the geological distribution, in spite that the plastic counter mostly measures high energy charged particles and energetic neutrons. These results are presented and discussed.

75 FR 21680 - GE-Hitachi Global Laser Enrichment LLC;

Federal Register 2010, 2011, 2012, 2013, 2014

2010-04-26

... Global Laser Enrichment LLC; Establishment of Atomic Safety and Licensing Board Pursuant to delegation by... is hereby given that an Atomic Safety and Licensing Board (Board) is being established to preside... comprised of the following administrative judges: Paul S. Ryerson, Chair, Atomic Safety and Licensing Board...

Isolation and Characterization of a Geobacillus thermoleovorans Strain from an Ultra-Deep South African Gold Mine

DOE Office of Scientific and Technical Information (OSTI.GOV)

Deflaun, Mary F.; Fredrickson, Jim K.; Dong, Hailiang

2007-03-08

A thermophilic, facultative bacterium was isolated from a depth of 3.1 km below ground surface in an ultradeep gold mine in South Africa. This isolate, designated GE-7, was cultivated from pH 8.0, 600C fissure water. GE-7 grows optimally at 650C, pH 6.5 on a wide range of carbon substrates including GE-7 is a long rod-shaped bacterium (4-6 µm long x 0.5 wide) with terminal endospores and flagella, in addition to O2, can also utilize nitrate as an electron acceptor. Phylogenetic analysis of GE-7 16S rDNA sequence revealed high sequence similarity with G. thermoleovorans DSM 5366T (99.6%), however, certain phenotypic characteristicsmore » of GE-7 were distinct from this and other strains of G. thermoleovorans previously described.« less

New limits on intrinsic charm in the nucleon from global analysis of parton distributions

DOE PAGES

Jimenez-Delgado, P.; Hobbs, T. J.; Londergan, J. T.; ...

2015-02-27

We present a new global QCD analysis of parton distribution functions, allowing for possible intrinsic charm (IC) contributions in the nucleon inspired by light-front models. The analysis makes use of the full range of available high-energy scattering data for Q 2 ≥ 1 GeV 2 and W 2 ≥ 3.5 GeV 2, including fixed-target proton and deuteron deep cross sections at lower energies that were excluded in previously global analyses. The expanded data set places more stringent constraints on the momentum carried by IC, with (x) IC at most 0.5% (corresponding to an IC normalization of ~1%) at the 4σmore » level for Δ X2 = 1. We also assess the impact of older EMC measurements of F c 2c at large x, which favor a nonzero IC, but with very large X 2 values.« less

Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

DOEpatents

Wang, Qi; Iwaniczko, Eugene

2006-10-17

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Controlled Spalling in (100)-Oriented Germanium by Electroplating

NASA Astrophysics Data System (ADS)

Crouse, Dustin Ray

This work investigates controlled spalling as a method to exfoliate thin films of various thickness from rigid, crystalline germanium (Ge) substrates and to enable substrate reuse for III-V single junction photovoltaic devices. Technological limitations impeding wide-spread adoption of flexible electronics and high-material-cost photovoltaic devices have motivated significant interest in a method to remove devices from their substrates. DC magnetron sputtering has been previously utilized to remove semiconductor devices of various thicknesses from Ge substrates, but this method is expensive and time-consuming. Controlled spalling via high-speed electrodeposition is a fast, inexpensive exfoliation method that utilizes a tensile-stressed metal layer deposited on a (100)-oriented Ge substrate and an external force to mechanically propagate a crack parallel to the surface at a desired depth in the substrate material. Suo and Hutchinson's quantitative models describe critical combinations of film thickness and strain mismatch between a film and substrate at which a stressed bilayer system spontaneously spalls; however, fine control over a wide steady-state spall depth range has been limited by the ability to experimentally tailor strain mismatch caused by residual stress within deposited stressor layers. This work investigates the effect of tuning electroplating current density and electrolyte chemistry on the residual stress in a nickel stressor film and their impact on the achievable spall depth range. Steady-state spall depth is found to increase with increasing stressor layer thickness and decrease with increasing residual stress. By tailoring residual stress through adjusting plating conditions and the electrolyte's phosphorous concentration, wide control over spall depth within Ge substrates from sub-micron to 76microm-thicknesses were achieved. To assess the viability of utilizing controlled spalling for substrate reuse, this dissertation demonstrates the first III-V solar cells (GaInAsP, Eg 1.7 eV) grown directly on a spalled-Ge substrate without any additional surface preparation. Widespread adoption of high-efficiency III-V solar cells has been limited by expensive deposition processes and high material cost of substrates. Substrate reuse offers a promising route towards enabling III-V devices to become cost-competitive for one-sun terrestrial applications. In this study, the quality of spalled Ge surfaces is characterized to assess lattice matching capability between the device layer materials and the substrate. GaAs films grown on spalled Ge substrates by hydride vapor phase epitaxy were single-crystal in nature. III-V solar cells grown on spalled and pristine Ge substrates show nearly equivalent efficiency of 8%, despite the roughness of the spalled-Ge substrate. Principles of fractography were used to deduce that surface roughness originated from non-uniform crack propagation and mixed-mode loading during the spalling process.

Electronic and mechanical properties of graphene-germanium interfaces grown by chemical vapor deposition

DOE PAGES

Kiraly, Brian T.; Jacobberger, Robert M.; Mannix, Andrew J.; ...

2015-10-27

Epitaxially oriented wafer-scale graphene grown directly on semiconducting Ge substrates is of high interest for both fundamental science and electronic device applications. To date, however, this material system remains relatively unexplored structurally and electronically, particularly at the atomic scale. To further understand the nature of the interface between graphene and Ge, we utilize ultrahigh vacuum scanning tunneling microscopy (STM) and scanning tunneling spectroscopy (STS) along with Raman and X-ray photoelectron spectroscopy to probe interfacial atomic structure and chemistry. STS reveals significant differences in electronic interactions between graphene and Ge(110)/Ge(111), which is consistent with a model of stronger interaction on Ge(110)more » leading to epitaxial growth. Raman spectra indicate that the graphene is considerably strained after growth, with more point-to-point variation on Ge(111). Furthermore, this native strain influences the atomic structure of the interface by inducing metastable and previously unobserved Ge surface reconstructions following annealing. These nonequilibrium reconstructions cover >90% of the surface and, in turn, modify both the electronic and mechanical properties of the graphene overlayer. Finally, graphene on Ge(001) represents the extreme strain case, where graphene drives the reorganization of the Ge surface into [107] facets. From this study, it is clear that the interaction between graphene and the underlying Ge is not only dependent on the substrate crystallographic orientation, but is also tunable and strongly related to the atomic reconfiguration of the graphene–Ge interface.« less

Epitaxial growth and electrical transport properties of Cr{sub 2}GeC thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eklund, Per; Thin Film Physics Division, Linkoeping University, IFM, 581 83 Linkoeping; Bugnet, Matthieu

2011-08-15

Cr{sub 2}GeC thin films were grown by magnetron sputtering from elemental targets. Phase-pure Cr{sub 2}GeC was grown directly onto Al{sub 2}O{sub 3}(0001) at temperatures of 700-800 deg. C. These films have an epitaxial component with the well-known epitaxial relationship Cr{sub 2}GeC(0001)//Al{sub 2}O{sub 3}(0001) and Cr{sub 2}GeC(1120)//Al{sub 2}O{sub 3}(1100) or Cr{sub 2}GeC(1120)//Al{sub 2}O{sub 3}(1210). There is also a large secondary grain population with (1013) orientation. Deposition onto Al{sub 2}O{sub 3}(0001) with a TiN(111) seed layer and onto MgO(111) yielded growth of globally epitaxial Cr{sub 2}GeC(0001) with a virtually negligible (1013) contribution. In contrast to the films deposited at 700-800 deg. C,more » the ones grown at 500-600 deg. C are polycrystalline Cr{sub 2}GeC with (1010)-dominated orientation; they also exhibit surface segregations of Ge as a consequence of fast Ge diffusion rates along the basal planes. The room-temperature resistivity of our samples is 53-66 {mu}{Omega}cm. Temperature-dependent resistivity measurements from 15-295 K show that electron-phonon coupling is important and likely anisotropic, which emphasizes that the electrical transport properties cannot be understood in terms of ground state electronic structure calculations only.« less

Role of genetically engineered animals in future food production.

PubMed

McColl, K A; Clarke, B; Doran, T J

2013-03-01

Genetically engineered (GE) animals are likely to have an important role in the future in meeting the food demand of a burgeoning global population. There have already been many notable achievements using this technology in livestock, poultry and aquatic species. In particular, the use of RNA interference (RNAi) to produce virus-resistant animals is a rapidly-developing area of research. However, despite the promise of this technology, very few GE animals have been commercialised. This review aims to provide information so that veterinarians and animal health scientists are better able to participate in the debate on GE animals. © 2013 The Authors. Australian Veterinary Journal © 2013 Australian Veterinary Association.

75 FR 36447 - Notice of Availability of Draft Environmental Impact Statement and Public Meetings for the...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-06-25

... Statement and Public Meetings for the General Electric-Hitachi Global Laser Enrichment, LLC Proposed Laser... the proposed General Electric-Hitachi (GEH) Global Laser Enrichment (GLE) Uranium Enrichment Facility... to locate the facility on the existing General Electric Company (GE) site near Wilmington, North...

Global Education--An Educational Perspective to Cope with Globalisation?

ERIC Educational Resources Information Center

Lehner, Daniela; Wurzenberger, Julia

2013-01-01

Purpose: The purpose of this paper is to explore the concept of Global Education (GE) from a "theory of action plan" and an "evolutionary and systems theory" approach as an educational perspective to cope with globalisation--more specifically, the challenges of globalisation. Moreover, an additional aim is to analyse the…

The primary cosmic ray electron spectrum from 10 GeV to about 200 GeV

NASA Technical Reports Server (NTRS)

Silverberg, R. F.; Ormes, J. F.; Balasubrahmanyan, V. K.; Ryan, M. J.

1971-01-01

An ionization spectrometer consisting of 10.8 radiation lengths of tungsten and 35 radiation lengths of iron has been used to determine the energy spectrum of cosmic ray electrons above 10 GeV. The spectrometer was calibrated with electrons from 5.4 to 18 GeV and then flown at an altitude of 6 gm-cm/2 for 16 hours. Separation of electron initiated events from proton events was achieved by utilizing starting point distributions, the shower development in tungsten, and the energy deposited in the large thickness of iron absorber. The exponent of the differential energy spectrum of the electrons is -3.1 + or - 0.2 while the exponent of the background is consistent with the proton exponent of -2.7 + or -0.2.

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures

PubMed Central

Radek, Manuel; Liedke, Bartosz; Schmidt, Bernd; Voelskow, Matthias; Bischoff, Lothar; Lundsgaard Hansen, John; Nylandsted Larsen, Arne; Bougeard, Dominique; Böttger, Roman; Prucnal, Slawomir; Posselt, Matthias; Bracht, Hartmut

2017-01-01

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing. PMID:28773172

Ion-Beam-Induced Atomic Mixing in Ge, Si, and SiGe, Studied by Means of Isotope Multilayer Structures.

PubMed

Radek, Manuel; Liedke, Bartosz; Schmidt, Bernd; Voelskow, Matthias; Bischoff, Lothar; Hansen, John Lundsgaard; Larsen, Arne Nylandsted; Bougeard, Dominique; Böttger, Roman; Prucnal, Slawomir; Posselt, Matthias; Bracht, Hartmut

2017-07-17

Crystalline and preamorphized isotope multilayers are utilized to investigate the dependence of ion beam mixing in silicon (Si), germanium (Ge), and silicon germanium (SiGe) on the atomic structure of the sample, temperature, ion flux, and electrical doping by the implanted ions. The magnitude of mixing is determined by secondary ion mass spectrometry. Rutherford backscattering spectrometry in channeling geometry, Raman spectroscopy, and transmission electron microscopy provide information about the structural state after ion irradiation. Different temperature regimes with characteristic mixing properties are identified. A disparity in atomic mixing of Si and Ge becomes evident while SiGe shows an intermediate behavior. Overall, atomic mixing increases with temperature, and it is stronger in the amorphous than in the crystalline state. Ion-beam-induced mixing in Ge shows no dependence on doping by the implanted ions. In contrast, a doping effect is found in Si at higher temperature. Molecular dynamics simulations clearly show that ion beam mixing in Ge is mainly determined by the thermal spike mechanism. In the case of Si thermal spike, mixing prevails at low temperature whereas ion beam-induced enhanced self-diffusion dominates the atomic mixing at high temperature. The latter process is attributed to highly mobile Si di-interstitials formed under irradiation and during damage annealing.

The Impact of Multifaceted Osteoporosis Group Education on Patients' Decision-Making regarding Treatment Options and Lifestyle Changes.

PubMed

Jensen, Annesofie L; Wind, Gitte; Langdahl, Bente Lomholt; Lomborg, Kirsten

2018-01-01

Patients with chronic diseases like osteoporosis constantly have to make decisions related to their disease. Multifaceted osteoporosis group education (GE) may support patients' decision-making. This study investigated multifaceted osteoporosis GE focusing on the impact of GE on patients' decision-making related to treatment options and lifestyle. An interpretive description design using ethnographic methods was utilized with 14 women and three men diagnosed with osteoporosis who attended multifaceted GE. Data consisted of participant observation during GE and individual interviews. Attending GE had an impact on the patients' decision-making in all educational themes. Patients decided on new ways to manage osteoporosis and made decisions regarding bone health and how to implement a lifestyle ensuring bone health. During GE, teachers and patients shared evidence-based knowledge and personal experiences and preferences, respectively, leading to a two-way exchange of information and deliberation about recommendations. Though teachers and patients explored the implications of the decisions and shared their preferences, teachers stressed that the patients ultimately had to make the decision. Teachers therefore refrained from participating in the final step of the decision-making process. Attending GE has an impact on the patients' decision-making as it can initiate patient reflection and support decision-making.

New phases of D ge 2 current and diffeomorphism algebras in particle physics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tze, Chia-Hsiung.

We survey some global results and open issues of current algebras and their canonical field theoretical realization in D {ge} 2 dimensional spacetime. We assess the status of the representation theory of their generalized Kac-Moody and diffeomorphism algebras. Particular emphasis is put on higher dimensional analogs of fermi-bose correspondence, complex analyticity and the phase entanglements of anyonic solitons with exotic spin and statistics. 101 refs.

Stable and selective self-assembly of α-lipoic acid on Ge(001) for biomolecule immobilization

NASA Astrophysics Data System (ADS)

Kazmierczak, M.; Flesch, J.; Mitzloff, J.; Capellini, G.; Klesse, W. M.; Skibitzki, O.; You, C.; Bettenhausen, M.; Witzigmann, B.; Piehler, J.; Schroeder, T.; Guha, S.

2018-05-01

We demonstrate a novel method for the stable and selective surface functionalization of germanium (Ge) embedded in silicon dioxide. The Ge(001) surface is functionalized using α-lipoic acid (ALA), which can potentially be utilized for the immobilization of a wide range of biomolecules. We present a detailed pH-dependence study to establish the effect of the incubation pH value on the adsorption layer of the ALA molecules. A threshold pH value for functionalization is identified, dividing the examined pH range into two regions. Below a pH value of 7, the formation of a disordered ALA multilayer is observed, whereas a stable well-ordered ALA mono- to bi-layer on Ge(001) is achieved at higher pH values. Furthermore, we analyze the stability of the ALA layer under ambient conditions, revealing the most stable functionalized Ge(001) surface to effectively resist oxidation for up to one week. Our established functionalization method paves the way towards the successful immobilization of biomolecules in future Ge-based biosensors.

Novel Solution Process for Fabricating Ultra-Thin-Film Absorber Layers in Fe 2SiS 4 and Fe 2GeS 4 Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orefuwa, Samuel A.; Lai, Cheng-Yu; Dobson, Kevin D.

2014-05-12

Fe 2SiS 4 and Fe 2GeS 4 crystalline materials posses direct bandgaps of ~1.55 and ~1.4 eV respectively and an absorption coefficient larger than 10^5 cm–1; their theoretical potential as solar photovoltaic absorbers has been demonstrated. However, no solar devices that employ either Fe 2SiS 4 or Fe 2GeS 4 have been reported to date. In the presented work, nanoprecursors to Fe 2SiS 4 and Fe 2GeS 4 have been fabricated and employed to build ultra-thin-film layers via spray coating and rod coating methods. Temperature-dependent X-Ray diffraction analyses of nanoprecursors coatings show an unprecedented low temperature for forming crystalline Femore » 2SiS 4 and Fe 2GeS 4. Fabricating of ultra-thin-film photovoltaic devices utilizing Fe 2SiS 4 and Fe 2GeS 4 as solar absorber material is presented.« less

Integrating Curriculum: A Case Study of Teaching Global Education

ERIC Educational Resources Information Center

Ferguson-Patrick, Kate; Reynolds, Ruth; Macqueen, Suzanne

2018-01-01

Despite widespread support for integrated approaches to teaching, classroom practice reveals a lack of implementation. This paper explores challenges and opportunities in teaching an integrated curriculum, and connects this with the contemporary notion of a twenty-first century curriculum and pedagogy. A case study of Global Education (GE) is used…

Development of Γ-ray tracking detectors

DOE PAGES

Lieder, R. M.; Gast, W.; Jäger, H. M.; ...

2001-12-01

The next generation of 4π arrays for high-precision γ-ray spectroscopy AGATA will consist of γ-ray tracking detectors. They represent high-fold segmented Ge detectors and a front-end electronics, based on digital signal processing techniques, which allows to extract energy, timing and spatial information on the interactions of a γ-ray in the Ge detector by pulse shape analysis of its signals. Utilizing the information on the positions of the interaction points and the energies released at each point the tracks of the γ-rays in a Ge shell can be reconstructed in three dimensions on the basis of the Compton-scattering formula.

Activation and thermal stability of ultra-shallow B{sup +}-implants in Ge

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yates, B. R.; Darby, B. L.; Jones, K. S.

2012-12-15

The activation and thermal stability of ultra-shallow B{sup +} implants in crystalline (c-Ge) and preamorphized Ge (PA-Ge) following rapid thermal annealing was investigated using micro Hall effect and ion beam analysis techniques. The residual implanted dose of ultra-shallow B{sup +} implants in Ge was characterized using elastic recoil detection and was determined to correlate well with simulations with a dose loss of 23.2%, 21.4%, and 17.6% due to ion backscattering for 2, 4, and 6 keV implants in Ge, respectively. The electrical activation of ultra-shallow B{sup +} implants at 2, 4, and 6 keV to fluences ranging from 5.0 Multiplication-Signmore » 10{sup 13} to 5.0 Multiplication-Sign 10{sup 15} cm{sup -2} was studied using micro Hall effect measurements after annealing at 400-600 Degree-Sign C for 60 s. For both c-Ge and PA-Ge, a large fraction of the implanted dose is rendered inactive due to the formation of a presumable B-Ge cluster. The B lattice location in samples annealed at 400 Degree-Sign C for 60 s was characterized by channeling analysis with a 650 keV H{sup +} beam by utilizing the {sup 11}B(p, {alpha})2{alpha} nuclear reaction and confirmed the large fraction of off-lattice B for both c-Ge and PA-Ge. Within the investigated annealing range, no significant change in activation was observed. An increase in the fraction of activated dopant was observed with increasing energy which suggests that the surface proximity and the local point defect environment has a strong impact on B activation in Ge. The results suggest the presence of an inactive B-Ge cluster for ultra-shallow implants in both c-Ge and PA-Ge that remains stable upon annealing for temperatures up to 600 Degree-Sign C.« less

Morphological analysis of GeTe in inline phase change switches

DOE Office of Scientific and Technical Information (OSTI.GOV)

King, Matthew R., E-mail: matthew.king2@ngc.com; Department of Materials Science and Engineering, North Carolina State University, Raleigh, North Carolina 27695; El-Hinnawy, Nabil

2015-09-07

Crystallization and amorphization phenomena in indirectly heated phase change material-based devices were investigated. Scanning transmission electron microscopy was utilized to explore GeTe phase transition processes in the context of the unique inline phase change switch (IPCS) architecture. A monolithically integrated thin film heating element successfully converted GeTe to ON and OFF states. Device cycling prompted the formation of an active area which sustains the majority of structural changes during pulsing. A transition region on both sides of the active area consisting of polycrystalline GeTe and small nuclei (<15 nm) in an amorphous matrix was also observed. The switching mechanism, determined bymore » variations in pulsing parameters, was shown to be predominantly growth-driven. A preliminary model for crystallization and amorphization in IPCS devices is presented.« less

Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys

NASA Astrophysics Data System (ADS)

Herlach, Dieter M.; Simons, Daniel; Pichon, Pierre-Yves

2018-01-01

We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge100-xSix (x = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth. This article is part of the theme issue `From atomistic interfaces to dendritic patterns'.

Development of 100 g Si and 250 g Ge detectors for a dark matter search

NASA Astrophysics Data System (ADS)

Brink, P. L.; Cabrera, B.; Chugg, B.; Clarke, R. M.; Davies, A.; Nam, S. W.; Young, B. A.

1996-05-01

Over the last two years we have proposed and implemented a new phonon sensing scheme for Cryogenic elementary particle detectors based upon Transition Edge Sensors (TES) operated in the (negative) Electrothermal-feedback (ETF) mode, and utilizing large Al collection pads for the initial phonon absorption. We have also implemented an ionization electrode, in addition to the phonon sensors, to allow the simultaneous measurement of ionization and phonon signals in Si and Ge absorbers. Our progress to date include successfully discriminating between electron and nuclear recoils down to a threshold of 4 keV recoil energy for a 4 g Si detector. Our first 100 g Si detectors have been fabricated, and initial work on Ge detectors indicates that our phonon sensing scheme will also work on large mass Ge absorbers.

Hadronic energy resolution of a highly granular scintillator-steel hadron calorimeter using software compensation techniques

NASA Astrophysics Data System (ADS)

Adloff, C.; Blaha, J.; Blaising, J.-J.; Drancourt, C.; Espargilière, A.; Gaglione, R.; Geffroy, N.; Karyotakis, Y.; Prast, J.; Vouters, G.; Francis, K.; Repond, J.; Smith, J.; Xia, L.; Baldolemar, E.; Li, J.; Park, S. T.; Sosebee, M.; White, A. P.; Yu, J.; Buanes, T.; Eigen, G.; Mikami, Y.; Watson, N. K.; Goto, T.; Mavromanolakis, G.; Thomson, M. A.; Ward, D. R.; Yan, W.; Benchekroun, D.; Hoummada, A.; Khoulaki, Y.; Benyamna, M.; Cârloganu, C.; Fehr, F.; Gay, P.; Manen, S.; Royer, L.; Blazey, G. C.; Dyshkant, A.; Lima, J. G. R.; Zutshi, V.; Hostachy, J.-Y.; Morin, L.; Cornett, U.; David, D.; Falley, G.; Gadow, K.; Göttlicher, P.; Günter, C.; Hermberg, B.; Karstensen, S.; Krivan, F.; Lucaci-Timoce, A.-I.; Lu, S.; Lutz, B.; Morozov, S.; Morgunov, V.; Reinecke, M.; Sefkow, F.; Smirnov, P.; Terwort, M.; Vargas-Trevino, A.; Feege, N.; Garutti, E.; Marchesini, I.; Ramilli, M.; Eckert, P.; Harion, T.; Kaplan, A.; Schultz-Coulon, H.-Ch; Shen, W.; Stamen, R.; Tadday, A.; Bilki, B.; Norbeck, E.; Onel, Y.; Wilson, G. W.; Kawagoe, K.; Dauncey, P. D.; Magnan, A.-M.; Wing, M.; Salvatore, F.; Calvo Alamillo, E.; Fouz, M.-C.; Puerta-Pelayo, J.; Balagura, V.; Bobchenko, B.; Chadeeva, M.; Danilov, M.; Epifantsev, A.; Markin, O.; Mizuk, R.; Novikov, E.; Rusinov, V.; Tarkovsky, E.; Kirikova, N.; Kozlov, V.; Smirnov, P.; Soloviev, Y.; Buzhan, P.; Dolgoshein, B.; Ilyin, A.; Kantserov, V.; Kaplin, V.; Karakash, A.; Popova, E.; Smirnov, S.; Kiesling, C.; Pfau, S.; Seidel, K.; Simon, F.; Soldner, C.; Szalay, M.; Tesar, M.; Weuste, L.; Bonis, J.; Bouquet, B.; Callier, S.; Cornebise, P.; Doublet, Ph; Dulucq, F.; Faucci Giannelli, M.; Fleury, J.; Li, H.; Martin-Chassard, G.; Richard, F.; de la Taille, Ch; Pöschl, R.; Raux, L.; Seguin-Moreau, N.; Wicek, F.; Anduze, M.; Boudry, V.; Brient, J.-C.; Jeans, D.; Mora de Freitas, P.; Musat, G.; Reinhard, M.; Ruan, M.; Videau, H.; Bulanek, B.; Zacek, J.; Cvach, J.; Gallus, P.; Havranek, M.; Janata, M.; Kvasnicka, J.; Lednicky, D.; Marcisovsky, M.; Polak, I.; Popule, J.; Tomasek, L.; Tomasek, M.; Ruzicka, P.; Sicho, P.; Smolik, J.; Vrba, V.; Zalesak, J.; Belhorma, B.; Ghazlane, H.; Takeshita, T.; Uozumi, S.; Sauer, J.; Weber, S.; Zeitnitz, C.

2012-09-01

The energy resolution of a highly granular 1 m3 analogue scintillator-steel hadronic calorimeter is studied using charged pions with energies from 10 GeV to 80 GeV at the CERN SPS. The energy resolution for single hadrons is determined to be approximately 58%/√E/GeV. This resolution is improved to approximately 45%/√E/GeV with software compensation techniques. These techniques take advantage of the event-by-event information about the substructure of hadronic showers which is provided by the imaging capabilities of the calorimeter. The energy reconstruction is improved either with corrections based on the local energy density or by applying a single correction factor to the event energy sum derived from a global measure of the shower energy density. The application of the compensation algorithms to geant4 simulations yield resolution improvements comparable to those observed for real data.

Can the world afford to ignore biotechnology solutions that address food insecurity?

PubMed

Berman, Judit; Zhu, Changfu; Pérez-Massot, Eduard; Arjó, Gemma; Zorrilla-López, Uxue; Masip, Gemma; Banakar, Raviraj; Sanahuja, Georgina; Farré, Gemma; Miralpeix, Bruna; Bai, Chao; Vamvaka, Evangelia; Sabalza, Maite; Twyman, Richard M; Bassié, Ludovic; Capell, Teresa; Christou, Paul

2013-09-01

Genetically engineered (GE) crops can be used as part of a combined strategy to address food insecurity, which is defined as a lack of sustainable access to safe and nutritious food. In this article, we discuss the causes and consequences of food insecurity in the developing world, and the indirect economic impact on industrialized countries. We dissect the healthcare costs and lost productivity caused by food insecurity, and evaluate the relative merits of different intervention programs including supplementation, fortification and the deployment of GE crops with higher yields and enhanced nutritional properties. We provide clear evidence for the numerous potential benefits of GE crops, particularly for small-scale and subsistence farmers. GE crops with enhanced yields and nutritional properties constitute a vital component of any comprehensive strategy to tackle poverty, hunger and malnutrition in developing countries and thus reduce the global negative economic effects of food insecurity.

Structural, electronic, magnetic, elastic, and thermal properties of Co-based equiatomic quaternary Heusler alloys

NASA Astrophysics Data System (ADS)

Paudel, Ramesh; Zhu, Jingchuan

2018-05-01

In this research work, we have predicted the physical properties of CoFeZrGe and CoFeZrSb for the first time by utilizing first principle calculations based on density functional theory. The exchange-correlation potentials are treated within the generalized-gradient approximation of Perdew-Burke and Ernzerhof (GGA-PBE). The investigated equilibrium lattice parameters of CoFeCrSi are in agreement with available theoretical data and for CoFeZrZ(Z = Ge,Sb) are 6.0013 and 6.2546 Å respectively. The calculated magnetic moments are 1.01μB /fu , 2μB /fu and 1μB /fu for CoFeZrZ(Z = Ge, Sb and Si) respectively, and agree with the Slater-Pauling rule, Mt =Zt - 24 . The CoFeZrGe, CoFeZrSb and CoFeZrSi composites showed half-metallic behaviour with 100 % spin polarization at equilibrium lattice parameters with band gap of 0.43, 0.70 and 0.59 eV for GGA and an improved band gap of 0.86, 1.01 and 1.08 for GGA + U respectively. Elastic properties are also discussed in this paper and it is found that all the materials are mechanically stable and ductile in nature. The CoFeZrSi alloy is found to be stiffer than CoFeZrZ(Z = Ge and Sb) alloys. The Debye temperatures are predicted by using calculated elastic constants. Moreover, the volume heat capacities (Cv) are investigated by utilizing the quasi-harmonic Debye model.

A global view on the Higgs self-coupling at lepton colliders

DOE PAGES

Di Vita, Stefano; Durieux, Gauthier; Grojean, Christophe; ...

2018-02-28

We perform a global effective-field-theory analysis to assess the precision on the determination of the Higgs trilinear self-coupling at future lepton colliders. Two main scenarios are considered, depending on whether the center-of-mass energy of the colliders is sufficient or not to access Higgs pair production processes. Low-energy machines allow for ~40% precision on the extraction of the Higgs trilinear coupling through the exploitation of next-to-leading-order effects in single Higgs measurements, provided that runs at both 240/250 GeV and 350 GeV are available with luminosities in the few attobarns range. A global fit, including possible deviations in other SM couplings, ismore » essential in this case to obtain a robust determination of the Higgs self-coupling. High-energy machines can easily achieve a ~20% precision through Higgs pair production processes. In this case, the impact of additional coupling modifications is milder, although not completely negligible.« less

A global view on the Higgs self-coupling at lepton colliders

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Vita, Stefano; Durieux, Gauthier; Grojean, Christophe

We perform a global effective-field-theory analysis to assess the precision on the determination of the Higgs trilinear self-coupling at future lepton colliders. Two main scenarios are considered, depending on whether the center-of-mass energy of the colliders is sufficient or not to access Higgs pair production processes. Low-energy machines allow for ~40% precision on the extraction of the Higgs trilinear coupling through the exploitation of next-to-leading-order effects in single Higgs measurements, provided that runs at both 240/250 GeV and 350 GeV are available with luminosities in the few attobarns range. A global fit, including possible deviations in other SM couplings, ismore » essential in this case to obtain a robust determination of the Higgs self-coupling. High-energy machines can easily achieve a ~20% precision through Higgs pair production processes. In this case, the impact of additional coupling modifications is milder, although not completely negligible.« less

D3h [A-CE3-A]- (E = Al and Ga, A = Si, Ge, Sn, and Pb): A new class of hexatomic mono-anionic species with trigonal bipyramidal carbon

NASA Astrophysics Data System (ADS)

Wu, Yan-Bo; Li, Yan-Qin; Bai, Hui; Lu, Hai-Gang; Li, Si-Dian; Zhai, Hua-Jin; Wang, Zhi-Xiang

2014-03-01

The non-classical trigonal bipyramidal carbon (TBPC) arrangement generally exists as transition states (TSs) in nucleophilic bimolecular substitution (SN2) reactions. Nevertheless, chemists have been curious about whether such a carbon bonding could be stable in equilibrium structures for decades. As the TBPC arrangement was normally realized as cationic species theoretically and experimentally, only one anionic example ([At-C(CN)3-At]-) was computationally devised. Herein, we report the design of a new class of anionic TBPC species by using the strategy similar to that for stabilizing the non-classical planar hypercoordinate carbon. When electron deficient Al and Ga were used as the equatorial ligands, eight D3h [A-CE3-A]- (E = Al and Ga, A = Si, Ge, Sn, and Pb) TBPC structures were found to be the energy minima rather than TSs at both the B3LYP and MP2 levels. Remarkably, the energetic results at the CCSD(T) optimization level further identify [Ge-CAl3-Ge]- and [Sn-CGa3-Sn]- even to be the global minima and [Si-CAl3-Si]- and [Ge-CGa3-Ge]- to be the local minima, only slightly higher than their global minima. The electronic structure analyses reveal that the substantial ionic C-E bonding, the peripheral E-A covalent bonding, and the axial mc-2e (multi center-two electrons) bonding play roles in stabilizing these TBPC structures. The structural simplicity and the high thermodynamic stability suggest that some of these species may be generated and captured in the gas phase. Furthermore, as mono-anionic species, their first vertical detachment energies are differentiable from those of their nearest isomers, which would facilitate their characterization via experiments such as the negative ion photoelectron spectroscopy.

Measurements of Absolute Hadronic Branching Fractions of the Λ_{c}^{+} Baryon.

PubMed

Ablikim, M; Achasov, M N; Ai, X C; Albayrak, O; Albrecht, M; Ambrose, D J; Amoroso, A; An, F F; An, Q; Bai, J Z; Baldini Ferroli, R; Ban, Y; Bennett, D W; Bennett, J V; Bertani, M; Bettoni, D; Bian, J M; Bianchi, F; Boger, E; Boyko, I; Briere, R A; Cai, H; Cai, X; Cakir, O; Calcaterra, A; Cao, G F; Cetin, S A; Chang, J F; Chelkov, G; Chen, G; Chen, H S; Chen, H Y; Chen, J C; Chen, M L; Chen, S J; Chen, X; Chen, X R; Chen, Y B; Cheng, H P; Chu, X K; Cibinetto, G; Dai, H L; Dai, J P; Dbeyssi, A; Dedovich, D; Deng, Z Y; Denig, A; Denysenko, I; Destefanis, M; De Mori, F; Ding, Y; Dong, C; Dong, J; Dong, L Y; Dong, M Y; Dou, Z L; Du, S X; Duan, P F; Eren, E E; Fan, J Z; Fang, J; Fang, S S; Fang, X; Fang, Y; Farinelli, R; Fava, L; Fedorov, O; Feldbauer, F; Felici, G; Feng, C Q; Fioravanti, E; Fritsch, M; Fu, C D; Gao, Q; Gao, X L; Gao, X Y; Gao, Y; Gao, Z; Garzia, I; Goetzen, K; Gong, L; Gong, W X; Gradl, W; Greco, M; Gu, M H; Gu, Y T; Guan, Y H; Guo, A Q; Guo, L B; Guo, Y; Guo, Y P; Haddadi, Z; Hafner, A; Han, S; Hao, X Q; Harris, F A; He, K L; Held, T; Heng, Y K; Hou, Z L; Hu, C; Hu, H M; Hu, J F; Hu, T; Hu, Y; Huang, G S; Huang, J S; Huang, X T; Huang, Y; Hussain, T; Ji, Q; Ji, Q P; Ji, X B; Ji, X L; Jiang, L W; Jiang, X S; Jiang, X Y; Jiao, J B; Jiao, Z; Jin, D P; Jin, S; Johansson, T; Julin, A; Kalantar-Nayestanaki, N; Kang, X L; Kang, X S; Kavatsyuk, M; Ke, B C; Kiese, P; Kliemt, R; Kloss, B; Kolcu, O B; Kopf, B; Kornicer, M; Kuehn, W; Kupsc, A; Lange, J S; Lara, M; Larin, P; Leng, C; Li, C; Li, Cheng; Li, D M; Li, F; Li, F Y; Li, G; Li, H B; Li, J C; Li, Jin; Li, K; Li, K; Li, Lei; Li, P R; Li, Q Y; Li, T; Li, W D; Li, W G; Li, X L; Li, X M; Li, X N; Li, X Q; Li, Z B; Liang, H; Liang, Y F; Liang, Y T; Liao, G R; Lin, D X; Liu, B J; Liu, C X; Liu, D; Liu, F H; Liu, Fang; Liu, Feng; Liu, H B; Liu, H H; Liu, H H; Liu, H M; Liu, J; Liu, J B; Liu, J P; Liu, J Y; Liu, K; Liu, K Y; Liu, L D; Liu, P L; Liu, Q; Liu, S B; Liu, X; Liu, Y B; Liu, Z A; Liu, Zhiqing; Loehner, H; Lou, X C; Lu, H J; Lu, J G; Lu, Y; Lu, Y P; Luo, C L; Luo, M X; Luo, T; Luo, X L; Lyu, X R; Ma, F C; Ma, H L; Ma, L L; Ma, Q M; Ma, T; Ma, X N; Ma, X Y; Ma, Y M; Maas, F E; Maggiora, M; Mao, Y J; Mao, Z P; Marcello, S; Messchendorp, J G; Min, J; Mitchell, R E; Mo, X H; Mo, Y J; Morales Morales, C; Muchnoi, N Yu; Muramatsu, H; Nefedov, Y; Nerling, F; Nikolaev, I B; Ning, Z; Nisar, S; Niu, S L; Niu, X Y; Olsen, S L; Ouyang, Q; Pacetti, S; Pan, Y; Patteri, P; Pelizaeus, M; Peng, H P; Peters, K; Pettersson, J; Ping, J L; Ping, R G; Poling, R; Prasad, V; Qi, H R; Qi, M; Qian, S; Qiao, C F; Qin, L Q; Qin, N; Qin, X S; Qin, Z H; Qiu, J F; Rashid, K H; Redmer, C F; Ripka, M; Rong, G; Rosner, Ch; Ruan, X D; Santoro, V; Sarantsev, A; Savrié, M; Schoenning, K; Schumann, S; Shan, W; Shao, M; Shen, C P; Shen, P X; Shen, X Y; Sheng, H Y; Song, W M; Song, X Y; Sosio, S; Spataro, S; Sun, G X; Sun, J F; Sun, S S; Sun, Y J; Sun, Y Z; Sun, Z J; Sun, Z T; Tang, C J; Tang, X; Tapan, I; Thorndike, E H; Tiemens, M; Ullrich, M; Uman, I; Varner, G S; Wang, B; Wang, B L; Wang, D; Wang, D Y; Wang, K; Wang, L L; Wang, L S; Wang, M; Wang, P; Wang, P L; Wang, S G; Wang, W; Wang, W P; Wang, X F; Wang, Y D; Wang, Y F; Wang, Y Q; Wang, Z; Wang, Z G; Wang, Z H; Wang, Z Y; Weber, T; Wei, D H; Wei, J B; Weidenkaff, P; Wen, S P; Wiedner, U; Wolke, M; Wu, L H; Wu, Z; Xia, L; Xia, L G; Xia, Y; Xiao, D; Xiao, H; Xiao, Z J; Xie, Y G; Xiu, Q L; Xu, G F; Xu, L; Xu, Q J; Xu, Q N; Xu, X P; Yan, L; Yan, W B; Yan, W C; Yan, Y H; Yang, H J; Yang, H X; Yang, L; Yang, Y X; Ye, M; Ye, M H; Yin, J H; Yu, B X; Yu, C X; Yu, J S; Yuan, C Z; Yuan, W L; Yuan, Y; Yuncu, A; Zafar, A A; Zallo, A; Zeng, Y; Zeng, Z; Zhang, B X; Zhang, B Y; Zhang, C; Zhang, C C; Zhang, D H; Zhang, H H; Zhang, H Y; Zhang, J J; Zhang, J L; Zhang, J Q; Zhang, J W; Zhang, J Y; Zhang, J Z; Zhang, K; Zhang, L; Zhang, X Y; Zhang, Y; Zhang, Y H; Zhang, Y N; Zhang, Y T; Zhang, Yu; Zhang, Z H; Zhang, Z P; Zhang, Z Y; Zhao, G; Zhao, J W; Zhao, J Y; Zhao, J Z; Zhao, Lei; Zhao, Ling; Zhao, M G; Zhao, Q; Zhao, Q W; Zhao, S J; Zhao, T C; Zhao, Y B; Zhao, Z G; Zhemchugov, A; Zheng, B; Zheng, J P; Zheng, W J; Zheng, Y H; Zhong, B; Zhou, L; Zhou, X; Zhou, X K; Zhou, X R; Zhou, X Y; Zhu, K; Zhu, K J; Zhu, S; Zhu, S H; Zhu, X L; Zhu, Y C; Zhu, Y S; Zhu, Z A; Zhuang, J; Zotti, L; Zou, B S; Zou, J H

2016-02-05

We report the first measurement of absolute hadronic branching fractions of Λ_{c}^{+} baryon at the Λ_{c}^{+}Λ[over ¯]_{c}^{-} production threshold, in the 30 years since the Λ_{c}^{+} discovery. In total, 12 Cabibbo-favored Λ_{c}^{+} hadronic decay modes are analyzed with a double-tag technique, based on a sample of 567  pb^{-1} of e^{+}e^{-} collisions at sqrt[s]=4.599  GeV recorded with the BESIII detector. A global least-squares fitter is utilized to improve the measured precision. Among the measurements for twelve Λ_{c}^{+} decay modes, the branching fraction for Λ_{c}^{+}→pK^{-}π^{+} is determined to be (5.84±0.27±0.23)%, where the first uncertainty is statistical and the second is systematic. In addition, the measurements of the branching fractions of the other 11 Cabibbo-favored hadronic decay modes are significantly improved.

Direct Observation of Quark-Hadron Duality in the Free Neutron {ital F}{sub 2} Structure Function

DOE PAGES

Niculescu, I.; Niculescu, G.; Melnitchouk, W.; ...

2015-05-21

Using the recently published data from the BONuS(Barely Off-shell Nucleon Structure) experiment at Jefferson Lab, which utilized a spectator tagging technique to extract the inclusive electron-free neutron scattering cross section, we obtain the first direct observation of quark-hadron duality in the neutron F-2 structure function. The data are used to reconstruct the lowest few (N = 2, 4, and 6) moments of F-2 in the three prominent nucleon resonance regions, as well as the moments integrated over the entire resonance region. Comparison with moments computed from global parametrizations of parton distribution functions suggest that quark-hadron duality holds locally for themore » neutron in the second and third resonance regions down to Q(2) approximate to 1 GeV2, with violations possibly up to 20% observed in the first resonance region.« less

The source of dissolved silicon in soil surface solutions of a temperate forest ecosystem: Ge/Si and Si isotope ratios as biogeochemical tracers

NASA Astrophysics Data System (ADS)

Cornelis, J.; Delvaux, B.; Cardinal, D.; André, L.; Ranger, J.; Opfergelt, S.

2010-12-01

Understand the biogeochemical cycle of silicon (Si) in the Earth’s critical zone and the dissolved Si transfer from the litho-pedosphere into the hydrosphere is of great interest for the global balance of biogeochemical processes, including the global C cycle. Indeed, the interaction between Si and C cycles regulates the atmospheric CO2 through the chemical weathering of silicate minerals, the C sequestration in stable organo-mineral compounds and the Si nutrition of phytoplankton CO2-consumers in oceans. H4SiO4 released by mineral dissolution contributes to the critical zone evolution through neoformation of secondary minerals, adsorption onto hydroxyl-bearing phases and recycling by vegetation and return of phytoliths on topsoil. The neoformation of secondary precipitates (clay minerals and phytoliths polymerized in plants) and adsorption of Si onto Fe and Al (hydr)oxides are processes favoring the light Si isotope incorporation, generating rivers enriched in heavy Si isotopes. On the other hand, clay minerals and phytoliths display contrasting Ge/Si ratios since clay-sized weathering products are enriched in Ge and phytoliths are depleted in Ge. Thus stable Si isotope and Ge/Si ratios constitute very interesting proxies to trace transfer of Si in the critical zone. Here we report Si isotopic and Ge/Si ratios of the different Si pools in a temperate soil-tree system (Breuil experimental forest, France) involving various tree species grown on Alumnic Cambisol derived from granitic bedrock. Relative to granitic bedrock (δ30Si = -0.07 ‰; Ge/Si = 2.5 µmol/mol), clay-sized minerals are enriched in 28Si (-1.07 ‰) and Ge (6.2 µmol/mol) while phytoliths are enriched in 28Si (-0.28 to -0.64 ‰) and depleted in Ge (0.1 to 0.3 µmol/mol). This contrast allows us to infer the relative contribution of litho/pedogenic and biogenic mineral dissolution on the release of H4SiO4 in soil surface solutions. The Si-isotope signatures and Ge/Si ratios of forest floor solutions evolve towards lighter values (-1.38 and -2.05 ‰) and higher Ge/Si ratios (2.7 µmol/mol) relative to granite bedrock. This suggests a partial dissolution of 28Si and Ge-enriched secondary clays minerals incorporated by bioturbation in organic-rich horizons, with a fractionation releasing preferentially light Si isotopes. Without considering that organic acids promote dissolution of minerals, clay minerals detected in the organic layer (vermiculite, chlorite, illite and Ca-montmorillonite) are not stable and could have been partially dissolved and transformed in the chemical environment of forest floor. Sources of H4SiO4 in forest floor solutions are influenced by tree species which control the extent of clay-sized minerals mixed in organic horizons by bioturbation and, to a lesser extent, the Si recycling by forest vegetation.

Search for the standard model Higgs boson in etau final states

NASA Astrophysics Data System (ADS)

Howley, Ian James

Presented in this dissertation is a search for the standard model (SM) Higgs boson using the DO detector at Fermilab in Batavia, IL. The SM is a fantastically accurate theory describing the fundamental interactions and particles of the Universe. The only undiscovered particle in the SM is the Higgs boson, which is hypothesized to be responsible for electroweak symmetry breaking and giving mass to all other particles. Considered in this search is the process H + X → etauhjj, where e is an electron, tauh is the hadronic decay of a tau, and j is a jet, using pp collisions at center of mass energy = 1.96 TeV. This search includes three production modes: associated production, gluon fusion, and vector boson fusion. It also utilizes two decay channels: H → tautau and H → WW. A new technique, dubbed the Global Boosted Decision Tree, is presented which offers a means of providing continuity to a multivariate search as a function of a particular parameter, in this case, the mass of the Higgs boson. The observed (expected) limit on the ratio of cross section times branching fraction to the SM at 95% confidence level is 14.6 (16.0) at mH = 125 GeV. This result is combined with the related channel H + X → mutauhjj and produced an observed (expected) limit of 9.0 (11.3) at m H = 125 GeV.

Recent results from PHOBOS at RHIC

NASA Astrophysics Data System (ADS)

Back, B. B.; Baker, M. D.; Barton, D. S.; Betts, R. R.; Ballintijn, M.; Bickley, A. A.; Bindel, R.; Budzanowski, A.; Busza, W.; Carroll, A.; Decowski, M. P.; García, E.; George, N.; Gulbrandsen, K.; Gushue, S.; Halliwell, C.; Hamblen, J.; Heintzelman, G. A.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Hołyński, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Katzy, J.; Khan, N.; Kucewicz, W.; Kulinich, P.; Kuo, C. M.; Lin, W. T.; Manly, S.; McLeod, D.; Michałowski, J.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Park, I. C.; Pernegger, H.; Reed, C.; Remsberg, L. P.; Reuter, M.; Roland, C.; Roland, G.; Rosenberg, L.; Sagerer, J.; Sarin, P.; Sawicki, P.; Skulski, W.; Steadman, S. G.; Steinberg, P.; Stephans, G. S. F.; Stodulski, M.; Sukhanov, A.; Tang, J.-L.; Teng, R.; Trzupek, A.; Vale, C.; van Niewwenhuizen, G. J.; Verdier, R.; Wadsworth, B.; Wolfs, F. L. H.; Wosiek, B.; Woźniak, K.; Wuosmaa, A. H.; Wysłouch, B.; Robert PakThe Phobos Collaboration

2003-06-01

The PHOBOS experiment at RHIC has recorded measurements for AuAu collisions spanning nucleon-nucleon center-of-mass energies from √ SNN = 19.6 GeV to 200 GeV. Global observables such as elliptic flow and charged particle multiplicity provide important constraints on model predictions that characterize the state of matter produced in these collisions. The nearly 4π acceptance of the PHOBOS experiment provides excellent coverage for complete flow and multiplicity measurements. Results including beam energy and centrality dependencies are presented and compared to elementary systems.

A Versatile Low Temperature Synthetic Route to Zintl Phase Precursors: Na4Si4, Na4Ge4 and K4Ge4 as Examples

PubMed Central

Ma, Xuchu; Xu, Fen; Atkins, Tonya; Goforth, Andrea M.; Neiner, Doinita; Navrotsky, Alexandra; Kauzlarich, Susan M.

2010-01-01

Na4Si4 and Na4Ge4 are ideal chemical precursors for inorganic clathrate structures, clusters, and nanocrystals. The monoclinic Zintl phases, Na4Si4 and Na4Ge4, contain isolated homo-tetrahedranide [Si4]4− and [Ge4]4− clusters surrounded by alkali metal cations. In this study, a simple scalable route has been applied to prepare Zintl phases of composition Na4Si4 and Na4Ge4 using the reaction between NaH and Si or Ge at low temperature (420 °C for Na4Si4 and 270 °C for Na4Ge4). The method was also applied to K4Ge4, using KH and Ge as raw materials, to show the versatility of this approach. The influence of specific reaction conditions on the purity of these Zintl phases has been studied by controlling five factors: the method of reagent mixing (manual or ball milled), the stoichiometry between raw materials, the reaction temperature, the heating time and the gas flow rate. Moderate ball-milling and excess NaH or KH facilitate the formation of pure Na4Si4, Na4Ge4 or K4Ge4 at 420 °C (Na4Si4) or 270 °C (both M4Ge4 compounds, M = Na, K). TG/DSC analysis of the reaction of NaH and Ge indicates that ball milling reduces the temperature for reaction and confirms the formation temperature. This method provides large quantities of high quality Na4Si4 and Na4Ge4 without the need for specialized laboratory equipment, such as Schlenk lines, niobium/tantalum containers, or an arc welder, thereby expanding the accessibility and chemical utility of these phases by making them more convenient to prepare. This new synthetic method may also be extended to lithium-containing Zintl phases (LiH is commercially available) as well as to alkali metal-tetrel Zintl compounds of other compositions, e.g. K4Ge9. PMID:19921060

Using Longitudinally Polarized Proton+Proton Collisions To Constrain the Polarized Gluon Distribution Through Dijet Measurements at √{ s} = 510 GeV at STAR

NASA Astrophysics Data System (ADS)

Olvitt, Daniel, Jr.; STAR Collaboration

2017-09-01

The production of jets from polarized p+p collisions at STAR is dominated by quark-gluon and gluon-gluon scattering. The dijet double spin asymmetry (ALL) is sensitive to the polarized gluon distribution (Δg (x)). Dijets are also advantageous because the parton momentum fraction, x, of initial partons may be reconstructed to first order from the final state measurements. New data from 2013 with an estimated 250 pb-1, at a beam polarization of 55% at √{ s} = 510 GeV, has a figure of merit 3 times that of the 2012 data collected at √{ s} = 510 GeV. This talk will discuss the new dijet ALL preliminary results, this data use 40% of the total 2013 data. The 2013 results are consistent with the published STAR dijet ALL measurements at √{ s} = 200 GeV, and the preliminary 2012 dijet ALL. The 2013 dijet ALL is also consistent with global fits from DSSV and NNPDF collaborations, that incorporate the published STAR inclusive jet ALL at √{ s} = 200 GeV.

Enhancing the Introductory Astronomical Experience with the Use of a Tablet and Telescope

NASA Astrophysics Data System (ADS)

Gill, Robert M.; Burin, Michael J.

2013-02-01

College and university general education (GE) classes are designed to broaden the understanding of all college and university students in areas outside their major interest. However, most GE classes are lecture type and do not facilitate hands-on experimental or observational activities related to the specific subject matter. Utilizing astronomy application programs (apps), currently available for the iPad and iPhone, in conjunction with a small inexpensive telescope, allows students unique hands-on experiences to explore and observe astronomical objects and concepts independently outside of class. These activities enhance the students' overall GE experience in a unique way not possible prior to the development of these technologies.

Enhancing the Educational Astronomical Experience of Non-Science Majors With the Use of an iPad and Telescope (Abstract)

NASA Astrophysics Data System (ADS)

Gill, R. M.; Burin, M. J.

2012-12-01

General Education (GE) classes are designed to broaden the understanding of all college and university students in areas outside their major interest. However, most GE classes are lecture type and do not facilitate hands-on experimental or observational activities related to the specific subject matter. Utilizing several astronomy application programs (apps), currently available for the iPad and iPhone, in conjunction with a small inexpensive telescope allows students unique hands-on experiences to explore and observe astronomical objects and concepts independently outside of class. These activities enhance the student's overall GE experience in a unique way not possible prior to the development of this technology.

The Ge/Si ratio quantifies the role of recycled crust in the generation of MORBs

NASA Astrophysics Data System (ADS)

Yang, S.; Humayun, M.; Salters, V. J. M.

2017-12-01

Global MORBs cover a broad spectrum of incompatible element compositions from depleted [(La/Sm)N < 0.5] to enriched [(La/Sm)N 0.5-2]. Two explanations for the origin of the enriched mantle sources of E-MORBs from ridge segments not associated with plumes have been proposed: (1) re-fertilization of Depleted Mantle (DM) by infiltration of low-degree melts (<1%) from subducted crust, or (2) by entrainment of solid recycled crust in the Depleted Mantle (DM). Whether pyroxenite contributes melt to E-MORB can be resolved by chemically distinguishing between partial melts of a peridotite source vs. those of a lithologically heterogeneous source of peridotite and pyroxenite. In this study, we exploit the mineralogical preferences of elements like Ge and Si to distinguish melts formed from peridotite or pyroxenite. In-situ analyses of 60 elements in 319 MORB glasses from north (10-36 °N) Mid-Atlantic Ridge (MAR) and Mid-Cayman Rise were performed by LA-ICP-MS. Use of a large laser spot size (150 μm) and high repetition rate (50 Hz) yielded a low blank correction (< 5%) for Ge, and high external precision for the Ge/Si ratio (± 3%, 1σ) in MORB glasses. E-MORBs (6.4±0.2) are systematically lower in Ge/Si than D-MORBs (7.2±0.2), while N-MORBs fall in between and are not fully resolved from either D- or E-MORB. Based on experimental Ds, partial melts from pyroxenites are always lower in Ge/Si than partial melts from peridotites because Ge is more compatible in garnet and clinopyroxene than in olivine [1]. E-MORBs also have lower Sc abundances (37 vs. 43 ppm) but slightly higher Fe/Mn ratios (55 vs. 53) than D-MORBs, and lower La/Nb (0.6 vs. 1-2) and Sr/Nb (<20 vs. >40), consistent with addition of 27% pyroxenite-derived melts to a D-MORB-like composition. This requires that the amount of solid recycled garnet pyroxenite in a peridotite source is 12%. The Ge/Si ratio is a new tool that effectively discriminates between melts derived from peridotite sources and melts derived from pyroxenite sources. Extrapolating from the correlation between K2O/TiO2 and Ge/Si established in this study, we estimated the distribution of pyroxenite, solid recycled crust, in the mantle sources of global MORB segments, which reveals a mode of 3-4% pyroxenite in the MORB source. [1] Davis et al., 2013

Fabrication of quantum dots in undoped Si/Si 0.8Ge 0.2 heterostructures using a single metal-gate layer

DOE PAGES

Lu, T. M.; Gamble, J. K.; Muller, R. P.; ...

2016-08-01

Enhancement-mode Si/SiGe electron quantum dots have been pursued extensively by many groups for their potential in quantum computing. Most of the reported dot designs utilize multiple metal-gate layers and use Si/SiGe heterostructures with Ge concentration close to 30%. Here, we report the fabrication and low-temperature characterization of quantum dots in the Si/Si 0.8Ge 0.2 heterostructures using only one metal-gate layer. We find that the threshold voltage of a channel narrower than 1 μm increases as the width decreases. The higher threshold can be attributed to the combination of quantum confinement and disorder. We also find that the lower Ge ratiomore » used here leads to a narrower operational gate bias range. The higher threshold combined with the limited gate bias range constrains the device design of lithographic quantum dots. We incorporate such considerations in our device design and demonstrate a quantum dot that can be tuned from a single dot to a double dot. Furthermore, the device uses only a single metal-gate layer, greatly simplifying device design and fabrication.« less

Direct detection of MeV-scale dark matter utilizing germanium internal amplification for the charge created by the ionization of impurities

NASA Astrophysics Data System (ADS)

Mei, D.-M.; Wang, G.-J.; Mei, H.; Yang, G.; Liu, J.; Wagner, M.; Panth, R.; Kooi, K.; Yang, Y.-Y.; Wei, W.-Z.

2018-03-01

Light, MeV-scale dark matter (DM) is an exciting DM candidate that is undetectable by current experiments. A germanium (Ge) detector utilizing internal charge amplification for the charge carriers created by the ionization of impurities is a promising new technology with experimental sensitivity for detecting MeV-scale DM. We analyze the physics mechanisms of the signal formation, charge creation, charge internal amplification, and the projected sensitivity for directly detecting MeV-scale DM particles. We present a design for a novel Ge detector at helium temperature (˜ 4 K) enabling ionization of impurities from DM impacts. With large localized E-fields, the ionized excitations can be accelerated to kinetic energies larger than the Ge bandgap at which point they can create additional electron-hole pairs, producing intrinsic amplification to achieve an ultra-low energy threshold of ˜ 0.1 eV for detecting low-mass DM particles in the MeV scale. Correspondingly, such a Ge detector with 1 kg-year exposure will have high sensitivity to a DM-nucleon cross section of ˜ 5 × 10^{-45} cm2 at a DM mass of ˜ 10 MeV/c2 and a DM-electron cross section of ˜ 5 × 10^{-46} cm2 at a DM mass of ˜ 1 MeV/c^2.

Walthère Victor Spring - A Forerunner in the Study of the Greenhouse Effect

NASA Astrophysics Data System (ADS)

Demarée, Gaston R.; Verheyden, Rosiane

2016-01-01

In 1886, an article by Walthère Spring and Léon Roland, two scientists from the University of Liège, dealing with the carbon dioxide content in the atmosphere in Liège appeared in the "Mẻmoires" of the Royal Academy of Belgium. In order to explain the difference between temperatures in the city of Liège and those observed in that city's environs, the authors invoked the high level of atmospheric CO2. Although the climatological argument was rather weak and the article concerned only a local impact, it is obvious that Spring can be viewed as a precursor of Svante Arrhenius who foresaw global warming in 1895-1896.

Crystal growth kinetics in undercooled melts of pure Ge, Si and Ge-Si alloys.

PubMed

Herlach, Dieter M; Simons, Daniel; Pichon, Pierre-Yves

2018-02-28

We report on measurements of crystal growth dynamics in semiconducting pure Ge and pure Si melts and in Ge 100- x Si x ( x  = 25, 50, 75) alloy melts as a function of undercooling. Electromagnetic levitation techniques are applied to undercool the samples in a containerless way. The growth velocity is measured by the utilization of a high-speed camera technique over an extended range of undercooling. Solidified samples are examined with respect to their microstructure by scanning electron microscopic investigations. We analyse the experimental results of crystal growth kinetics as a function of undercooling within the sharp interface theory developed by Peter Galenko. Transitions of the atomic attachment kinetics are found at large undercoolings, from faceted growth to dendrite growth.This article is part of the theme issue 'From atomistic interfaces to dendritic patterns'. © 2018 The Author(s).

Responses of soil respiration to soil management changes in an agropastoral ecotone in Inner Mongolia, China.

PubMed

Xue, Haili; Tang, Haiping

2018-01-01

Studying the responses of soil respiration ( R s ) to soil management changes is critical for enhancing our understanding of the global carbon cycle and has practical implications for grassland management. Therefore, the objectives of this study were (1) quantify daily and seasonal patterns of R s , (2) evaluate the influence of abiotic factors on R s , and (3) detect the effects of soil management changes on R s . We hypothesized that (1) most of daily and seasonal variation in R s could be explained by soil temperature ( T s ) and soil water content ( S w ), (2) soil management changes could significantly affect R s , and (3) soil management changes affected R s via the significant change in abiotic and biotic factors. In situ R s values were monitored in an agropastoral ecotone in Inner Mongolia, China, during the growing seasons in 2009 (August to October) and 2010 (May to October). The soil management changes sequences included free grazing grassland (FG), cropland (CL), grazing enclosure grassland (GE), and abandoned cultivated grassland (AC). During the growing season in 2010, cumulative R s for FG, CL, GE, and AC averaged 265.97, 344.74, 236.70, and 226.42 gC m -2  year -1 , respectively. The T s and S w significantly influenced R s and explained 66%-86% of the variability in daily R s . Monthly mean temperature and precipitation explained 78%-96% of the variability in monthly R s . The results clearly showed that R s was increased by 29% with the conversion of FG to CL and decreased by 35% and 11% with the conversion of CL to AC and FG to GE. The factors impacting the change in R s under different soil management changes sequences varied. Our results confirm the tested hypotheses. The increase in Q 1 0 and litter biomass induced by conversion of FG to GE could lead to increased R s if the climate warming. We suggest that after proper natural restoration period, grasslands should be utilized properly to decrease R s .

Future prospects of mass-degenerate Higgs bosons in the C P -conserving two-Higgs-doublet model

NASA Astrophysics Data System (ADS)

Bian, Ligong; Chen, Ning; Su, Wei; Wu, Yongcheng; Zhang, Yu

2018-06-01

The scenario of two mass-degenerate Higgs bosons within the general two-Higgs-doublet model (2HDM) is revisited. We focus on the global picture when two C P -even Higgs bosons of h and H are nearly mass-degenerate. A global fit to the signal strength of the 125 GeV Higgs measured at the LHC is performed. Based on the best-fit result of the 2HDM mixing angles (α ,β ), theoretical constraints, charged and C P -odd Higgs boson direct search constraints and the electroweak precision constraints are imposed to the 2HDM parameter space. We present the signal predictions of the (4 b ,2 b 2 γ ) channels for the benchmark models at the LHC 14 TeV runs. We also study the direct Higgs boson pair productions at the LHC, and the Z-associated Higgs boson pair production search at the ILC 500 GeV runs, as well as the indirect probes at the CEPC 250 GeV run. We find that the mass-degenerate Higgs boson scenario in the Type-II 2HDM can be fully probed by these future experimental searches.

(Zn, Mg)2GeO4:Mn2+ submicrorods as promising green phosphors for field emission displays: hydrothermal synthesis and luminescence properties.

PubMed

Shang, Mengmeng; Li, Guogang; Yang, Dongmei; Kang, Xiaojiao; Peng, Chong; Cheng, Ziyong; Lin, Jun

2011-10-07

(Zn(1-x-y)Mg(y))(2)GeO(4): xMn(2+) (y = 0-0.30; x = 0-0.035) phosphors with uniform submicrorod morphology were synthesized through a facile hydrothermal process. X-Ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), photoluminescence (PL), and cathodoluminescence (CL) spectroscopy were utilized to characterize the samples. SEM and TEM images indicate that Zn(2)GeO(4):Mn(2+) samples consist of submicrorods with lengths around 1-2 μm and diameters around 200-250 nm, respectively. The possible formation mechanism for Zn(2)GeO(4) submicrorods has been presented. PL and CL spectroscopic characterizations show that pure Zn(2)GeO(4) sample shows a blue emission due to defects, while Zn(2)GeO(4):Mn(2+) phosphors exhibit a green emission corresponding to the characteristic transition of Mn(2+) ((4)T(1)→(6)A(1)) under the excitation of UV and low-voltage electron beam. Compared with Zn(2)GeO(4):Mn(2+) sample prepared by solid-state reaction, Zn(2)GeO(4):Mn(2+) phosphors obtained by hydrothermal process followed by high temperature annealing show better luminescence properties. In addition, codoping Mg(2+) ions into the lattice to substitute for Zn(2+) ions can enhance both the PL and CL intensity of Zn(2)GeO(4):Mn(2+) phosphors. Furthermore, Zn(2)GeO(4):Mn(2+) phosphors exhibit more saturated green emission than the commercial FEDs phosphor ZnO:Zn, and it is expected that these phosphors are promising for application in field-emission displays.

Comparison of the Effects of a Brand-name Drug and Its Generic Drug on the Quality of Life of Alzheimer's Disease Patients.

PubMed

Sakakibara, Mikio; Kido, Mitsuhiko; Kuribayashi, Jun; Okada, Hiroshi; Igarashi, Ataru; Kamei, Hiroyuki; Nabeshima, Toshitaka

2015-08-31

The pharmacological effects of generic (GE) donepezil are the same as Aricept, its brand-name counterpart. However, little is known as to whether these two drugs provide the same quality of life (QOL). The study subjects were patients with Alzheimer's disease who were taking donepezil hydrochloride tablets, and were selected by visiting either the local pharmacies or the patients' homes. We chose the brand-name drug Aricept and its GE form donepezil to investigate, from a long-term caregiver's perspective, the influence of both drugs on the patients' QOL. An EuroQol-5 Dimension (EQ-5D) was used to assess the QOL of patients with Alzheimer's disease, before and after various Aricept and/or donepezil regimens. Patients were divided into four groups: first time users of Aricept (n=43), first time users of GE donepezil (n=45), users refilling previous prescriptions of Aricept (n=51), and users switching from Aricept to GE donepezil (n=51). The average change in the EQ-5D utility indices rose significantly in the patients starting a new regimen of Aricept and its GE drug. The patients continuing an existing regimen of Aricept showed no significant differences, even after Aricept was switched to a GE drug. The QOL of patients starting a new regimen of Aricept and its GE drug improved. The QOL was maintained upon switching to the GE drug form.

Enzymatic degradation of lignin-carbohydrate complexes (LCCs): model studies using a fungal glucuronoyl esterase from Cerrena unicolor.

PubMed

d'Errico, Clotilde; Jørgensen, Jonas O; Krogh, Kristian B R M; Spodsberg, Nikolaj; Madsen, Robert; Monrad, Rune Nygaard

2015-05-01

Lignin-carbohydrate complexes (LCCs) are believed to influence the recalcitrance of lignocellulosic plant material preventing optimal utilization of biomass in e.g. forestry, feed and biofuel applications. The recently emerged carbohydrate esterase (CE) 15 family of glucuronoyl esterases (GEs) has been proposed to degrade ester LCC bonds between glucuronic acids in xylans and lignin alcohols thereby potentially improving delignification of lignocellulosic biomass when applied in conjunction with other cellulases, hemicellulases and oxidoreductases. Herein, we report the synthesis of four new GE model substrates comprising α- and ɣ-arylalkyl esters representative of the lignin part of naturally occurring ester LCCs as well as the cloning and purification of a novel GE from Cerrena unicolor (CuGE). Together with a known GE from Schizophyllum commune (ScGE), CuGE was biochemically characterized by means of Michaelis-Menten kinetics with respect to substrate specificity using the synthesized compounds. For both enzymes, a strong preference for 4-O-methyl glucuronoyl esters rather than unsubstituted glucuronoyl esters was observed. Moreover, we found that α-arylalkyl esters of methyl α-D-glucuronic acid are more easily cleaved by GEs than their corresponding ɣ-arylalkyl esters. Furthermore, our results suggest a preference of CuGE for glucuronoyl esters of bulky alcohols supporting the suggested biological action of GEs on LCCs. The synthesis of relevant GE model substrates presented here may provide a valuable tool for the screening, selection and development of industrially relevant GEs for delignification of biomass. © 2014 Wiley Periodicals, Inc.

Antioxidant action of ganghwayakssuk (Artemisia princeps Pamp.) in combination with ascorbic acid to increase the shelf life in raw and deep fried chicken nuggets.

PubMed

Hwang, Ko-Eun; Choi, Yun-Sang; Choi, Sun-Mi; Kim, Hyun-Wook; Choi, Ji-Hun; Lee, Mi-Ai; Kim, Cheon-Jei

2013-11-01

Raw and deep fried chicken nuggets containing various levels of ganghwayakssuk ethanolic extract (GE) in combination with ascorbic acid (Aa) were evaluated for shelf-life during refrigerated storage (4°C). The pH and color (lightness, redness, and yellowness) values of raw and deep fried samples were significantly affected by the addition of GE (P<0.05). All antioxidant combinations except for Aa+GE 0.01 were effective at delaying lipid oxidation (CD, POV, and TBARS) when compared to the control or Aa. Raw samples with GE 0.2 and Aa+GE 0.1 exhibited lower bacterial populations during storage. The sensory characteristics (color, juiciness, flavor, tenderness, and overall acceptability) did not differ significantly in all deep fried chicken nugget samples, except color, whereas storage time had a significant effect (P<0.05). The results suggest the possibility of utilizing raw and deep fried chicken nuggets with a mixture of ganghwayakssuk and ascorbic acid for the increase of shelf-life and quality. Copyright © 2013 Elsevier Ltd. All rights reserved.

Performance enhancement in uniaxially tensile stressed GeSn n-channel fin tunneling field-effect transistor: Impact of stress direction

NASA Astrophysics Data System (ADS)

Wang, Hongjuan; Han, Genquan; Jiang, Xiangwei; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hao, Yue

2017-04-01

In this work, the boosting effect on the performance of GeSn n-channel fin tunneling FET (nFinTFET) enabled by uniaxial tensile stress is investigated theoretically. As the fin rotates within the (001) plane, the uniaxial tensile stress is always along its direction. The electrical characteristics of tensile-stressed GeSn nFinTFETs with point and line tunneling modes are computed utilizing the technology computer aided design (TCAD) simulator in which the dynamic nonlocal band-to-band tunneling (BTBT) algorithm is employed. In comparison with the relaxed devices, tensile-stressed GeSn nFinTFETs achieve a substantial enhancement in band-to-band tunneling generation rate (G BTBT) and on-state current I ON owing to the reduced bandgap E G induced by the tensile stress. Performance improvement of GeSn nFinTFETs induced by tensile stress demonstrates a strong dependence on channel direction and tunneling modes. Under the same magnitude of stress, line-nFinTFETs obtain a more pronounced I ON enhancement over the transistors with point tunneling mode.

A Study of the Photoproduction of the $$\\Lambda_c^+$$ Charmed Baryon at $$\\gamma$$ Energies of 40-160 GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zorn, Carl John

Evidence for the Amore » $$+\\atop{c}$$ charmed baryon has been found in experiment E516 at the Tagged Photon Spectrometer in Fermilab. The experiment studied high energy IP interactions for photon energies in the range of 40-160 GeV by utilizing a large acceptance spectrometer system to study the forward reaction products and a unique, sophisticated recoil chamber to study the target fragments.« less

Measuring mid-rapidity multiplicity in PHOBOS

NASA Astrophysics Data System (ADS)

Iordanova, Aneta; Back, B. B.; Baker, M. D.; Ballintijn, M.; Barton, D. S.; Betts, R. R.; Bickley, A. A.; Bindel, R.; Busza, W.; Carroll, A.; Chai, Z.; Decowski, M. P.; García, E.; Gburek, T.; George, N.; Gulbrandsen, K.; Halliwell, C.; Hamblen, J.; Hauer, M.; Henderson, C.; Hofman, D. J.; Hollis, R. S.; Holynski, R.; Holzman, B.; Iordanova, A.; Johnson, E.; Kane, J. L.; Khan, N.; Kulinich, P.; Kuo, C. M.; Lin, W. T.; Manly, S.; Mignerey, A. C.; Nouicer, R.; Olszewski, A.; Pak, R.; Reed, C.; Roland, C.; Roland, G.; Sagerer, J.; Seals, H.; Sedykh, I.; Smith, C. E.; Stankiewicz, M. A.; Steinberg, P.; Stephans, G. S. F.; Sukhanov, A.; Tonjes, M. B.; Trzupek, A.; Vale, C.; van Nieuwenhuizen, G. J.; Vaurynovich, S. S.; Verdier, R.; Veres, G. I.; Wenger, E.; Wolfs, F. L. H.; Wosiek, B.; Wozniak, K.; Wyslouch, B.; PHOBOS Collaboration

2005-01-01

Several techniques have been developed by PHOBOS for measuring the multiplicity of charged particles produced in Au + Au collisions. We will discuss one of these techniques (the 'Tracklet' method) which utilizes two-hit tracks which intersect at the reconstructed collision vertex position. The physics that comes from these measurements can give valuable insight into the underlying mechanisms of particle production over a center of mass energy range of surdSNN = 19.6 GeV to the maximum RHIC energy of surdSNN = 200 GeV.

Effect of Sn Composition in Ge1- x Sn x Layers Grown by Using Rapid Thermal Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Kil, Yeon-Ho; Kang, Sukill; Jeong, Tae Soo; Shim, Kyu-Hwan; Kim, Dae-Jung; Choi, Yong-Dae; Kim, Mi Joung; Kim, Taek Sung

2018-05-01

The Ge1- x Sn x layers were grown by using rapid thermal chemical-vapor deposition (RTCVD) on boron-doped p-type Si (100) substrates with Sn compositions up to x = 0.83%. In order to obtain effect of the Sn composition on the structural and the optical characteristics, we utilized highresolution X-ray diffraction (HR-XRD), etch pit density (EPD), atomic force microscopy (AFM), Raman spectroscopy, and photocurrent (PC) spectra. The Sn compositions in the Ge1- x Sn x layers were found to be of x = 0.00%, 0.51%, 0.65%, and 0.83%. The root-mean-square (RMS) of the surface roughness of the Ge1- x Sn x layer increased from 2.02 nm to 3.40 nm as the Sn composition was increased from 0.51% to 0.83%, and EPD was on the order of 108 cm-2. The Raman spectra consist of only one strong peak near 300 cm-1, which is assigned to the Ge-Ge LO peaks and the Raman peaks shift to the wave number with increasing Sn composition. Photocurrent spectra show near energy band gap peaks and their peak energies decrease with increasing Sn composition due to band-gap bowing in the Ge1- x Sn x layer. An increase in the band gap bowing parameter was observed with increasing Sn composition.

Propulsion Health Monitoring for Enhanced Safety

NASA Technical Reports Server (NTRS)

Butz, Mark G.; Rodriguez, Hector M.

2003-01-01

This report presents the results of the NASA contract Propulsion System Health Management for Enhanced Safety performed by General Electric Aircraft Engines (GE AE), General Electric Global Research (GE GR), and Pennsylvania State University Applied Research Laboratory (PSU ARL) under the NASA Aviation Safety Program. This activity supports the overall goal of enhanced civil aviation safety through a reduction in the occurrence of safety-significant propulsion system malfunctions. Specific objectives are to develop and demonstrate vibration diagnostics techniques for the on-line detection of turbine rotor disk cracks, and model-based fault tolerant control techniques for the prevention and mitigation of in-flight engine shutdown, surge/stall, and flameout events. The disk crack detection work was performed by GE GR which focused on a radial-mode vibration monitoring technique, and PSU ARL which focused on a torsional-mode vibration monitoring technique. GE AE performed the Model-Based Fault Tolerant Control work which focused on the development of analytical techniques for detecting, isolating, and accommodating gas-path faults.

A Three-Tier Diagnostic Test to Assess Pre-Service Teachers' Misconceptions about Global Warming, Greenhouse Effect, Ozone Layer Depletion, and Acid Rain

ERIC Educational Resources Information Center

Arslan, Harika Ozge; Cigdemoglu, Ceyhan; Moseley, Christine

2012-01-01

This study describes the development and validation of a three-tier multiple-choice diagnostic test, the atmosphere-related environmental problems diagnostic test (AREPDiT), to reveal common misconceptions of global warming (GW), greenhouse effect (GE), ozone layer depletion (OLD), and acid rain (AR). The development of a two-tier diagnostic test…

Ge-on-insulator tunneling FET with abrupt source junction formed by utilizing snowplow effect of NiGe

NASA Astrophysics Data System (ADS)

Matsumura, Ryo; Katoh, Takumi; Takaguchi, Ryotaro; Takenaka, Mitsuru; Takagi, Shinichi

2018-04-01

Tunneling field-effect transistors (TFETs) attract much attention for use in realizing next-generation low-power processors. In particular, Ge-on-insulator (GOI) TFETs are expected to realize low power operation with a high on-current/off-current (I on/I off) ratio, owing to their narrow bandgap. Here, to improve the performance of GOI-TFETs, a source junction with a high doping concentration and an abrupt impurity profile is essential. In this study, a snowplow effect of NiGe combined with low-energy BF2 + implantation has been investigated to realize an abrupt p+/n Ge junction for GOI n-channel TFETs. By optimizing the Ni thickness to form NiGe (thickness: 4 nm), an abrupt junction with a B profile abruptness of ˜5 nm/dec has been realized with a high doping concentration of around 1021 cm-3. The operation of GOI n-TFETs with this source junction having the abrupt B profile has been demonstrated, and the improvement of TFET properties such as the I on/I off ratio from 311 to 743 and the subthreshold slope from 368 to 239 mV/dec has been observed. This junction formation technology is attractive for enhancing the TFET performance.

GeAs and SiAs monolayers: Novel 2D semiconductors with suitable band structures

NASA Astrophysics Data System (ADS)

Zhou, Liqin; Guo, Yu; Zhao, Jijun

2018-01-01

Two dimensional (2D) materials provide a versatile platform for nanoelectronics, optoelectronics and clean energy conversion. Based on first-principles calculations, we propose a novel kind of 2D materials - GeAs and SiAs monolayers and investigate their atomic structure, thermodynamic stability, and electronic properties. The calculations show that monolayer GeAs and SiAs sheets are energetically and dynamically stable. Their small interlayer cohesion energies (0.191 eV/atom for GeAs and 0.178 eV/atom for SiAs) suggest easy exfoliation from the bulk solids that exist in nature. As 2D semiconductors, GeAs and SiAs monolayers possess band gap of 2.06 eV and 2.50 eV from HSE06 calculations, respectively, while their band gap can be further engineered by the number of layers. The relatively small and anisotropic carrier effective masses imply fast electric transport in these 2D semiconductors. In particular, monolayer SiAs is a direct gap semiconductor and a potential photocatalyst for water splitting. These theoretical results shine light on utilization of monolayer or few-layer GeAs and SiAs materials for the next-generation 2D electronics and optoelectronics with high performance and satisfactory stability.

Systemic Glucoregulation by Glucose-Sensing Neurons in the Ventromedial Hypothalamic Nucleus (VMH).

PubMed

Shimazu, Takashi; Minokoshi, Yasuhiko

2017-05-01

The ventromedial hypothalamic nucleus (VMH) regulates glucose production in the liver as well as glucose uptake and utilization in peripheral tissues, including skeletal muscle and brown adipose tissue, via efferent sympathetic innervation and neuroendocrine mechanisms. The action of leptin on VMH neurons also increases glucose uptake in specific peripheral tissues through the sympathetic nervous system, with improved insulin sensitivity. On the other hand, subsets of VMH neurons, such as those that express steroidogenic factor 1 (SF1), sense changes in the ambient glucose concentration and are characterized as glucose-excited (GE) and glucose-inhibited (GI) neurons whose action potential frequency increases and decreases, respectively, as glucose levels rise. However, how these glucose-sensing (GE and GI) neurons in the VMH contribute to systemic glucoregulation remains poorly understood. In this review, we provide historical background and discuss recent advances related to glucoregulation by VMH neurons. In particular, the article describes the role of GE neurons in the control of peripheral glucose utilization and insulin sensitivity, which depend on mitochondrial uncoupling protein 2 of the neurons, as well as that of GI neurons in the control of hepatic glucose production through hypoglycemia-induced counterregulatory mechanisms.

Tunable electronic structures of germanium monochalcogenide nanosheets via light non-metallic atom functionalization: a first-principles study.

PubMed

Ding, Yi; Wang, Yanli

2016-08-17

Germanium monochalcogenides, i.e. GeS and GeSe sheets, are isoelectronic analogues of phosphorene, which have been synthesized in recent experiments (P. Ramasamy et al., J. Mater. Chem. C, 2016, 4, 479). Utilizing first-principles calculations, we have investigated their tunable electronic and magnetic properties via light non-metallic atom (B, C, N, O, Si, P, S) functionalization. We find that on these GeS and GeSe sheets O and S adatoms prefer to locate at the top site above the Ge atom, while the other ones like to occupy the anion site, which push the original S/Se atom to the hollow site instead. O and S adatoms slightly affect the semiconducting behaviour of the doped systems, while B, C, N, Si, P ones will drastically modify their band structures and induce versatile spintronic properties. Through the supercell calculations, B and C adatoms are found to induce a bipolar semiconducting behaviour in the decorated systems, while the N/P adatom will cause a spin-gapless-semiconducting/nearly-half-metallic feature in them. The B/C/N/Si/P-substituted GeS/GeSe sheet can be formed by removing the hollow-site S/Se atom from the adatom-decorated structures, which exhibit an opposite semiconducting/metallic behaviour to their phosphorene counterparts. A general odd-even rule is proposed for this phenomenon, which shows that an odd (even) number of valence electron difference between the substitution and host atoms would cause a metallic (semiconducting) feature in the substituted systems. Our study demonstrates that atom functionalization is an efficient way to tailor the properties of GeS and GeSe nanosheets, which have adaptable electronic properties for potential applications in nanoelectronics and spintronics.

Effects of forage types on digestibility, methane emissions, and nitrogen utilization efficiency in two genotypes of hill ewes.

PubMed

Zhao, Y G; Annett, R; Yan, T

2017-08-01

Thirty-six nonpregnant hill ewes (18 pure Scottish Blackface and 18 Swaledale × Scottish Blackface) aged 18 mo and weighing 48 ± 4.8 kg were allocated to 3 forage treatments balanced for genotype and BW. Each genotype was offered 3 forages (pelleted ryegrass, fresh lowland grass, and fresh hill grass) ad libitum with 6 ewes for each of the 6 genotype × diet combination treatments. Pelleted ryegrass was sourced from a commercial supplier (Drygrass South Western Ltd, Burrington, UK). Fresh lowland grass was harvested daily in the morning from a third regrowth perennial ryegrass () sward. Fresh hill grass was harvested from a seminatural hill grassland every 2 d and stored in plastic bags at 4 to 5°C until offered. The animals were individually housed in pens and offered experimental diets for 14 d before being transferred to 6 individual respiration chambers for a further 4 d, during which feed intake, fecal and urine outputs, and CH emissions were measured. There was no interaction between genotype and forage types on any variable measured. In a comparison of effects of the 3 forages, pelleted ryegrass had the greatest ( < 0.001) values in DMI, GE intake, CH emissions, N intake (NI), and fecal N (FN), urine N (UN), and manure N (MN) outputs, whereas hill grass had the lowest ( < 0.001) values in DMI, energy (GE, DE, and ME) intake, CH emissions, NI, UN, and MN. However, pelleted ryegrass had the lowest ratio in CH emissions per unit DMI ( = 0.022) or GE intake ( = 0.026) or UN excretion as a proportion of NI or MN ( < 0.001). Lowland grass had a greater ( < 0.001) digestibility of DM, OM, CP, NDF, ADF, and GE and a greater ( < 0.001) ME:GE ratio or retained N:NI ratio than pelleted ryegrass and hill grass. Genotypes of sheep had no effect on any variable in feed intake, digestibility, CH emissions, or N utilization. The CH conversion factors (CH energy/GE) for pelleted ryegrass, lowland grass, and hill grass were 4.4, 5.7, and 5.6%, respectively. All data were then pooled to develop regression equations between CH and DMI or between N excretions (FN, UN, and MN) and NI. Methane emissions and N excretions were positively related to DMI and NI ( < 0.001), respectively. However, increasing DMI could reduce CH emissions per kilogram DMI. These equations add new information in predicting enteric CH emissions and N utilization efficiency and can be used to quantify the environmental footprint of hill sheep production systems.

High-efficiency Thin-film Fe 2SiS 4 and Fe 2GeS 4-based Solar Cells Prepared from Low-Cost Solution Precursors. Final Report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Radu, Daniela Rodica; Liu, Mimi; Hwang, Po-yu

The project aimed to provide solar energy education to students from underrepresented groups and to develop a novel, nano-scale approach, in utilizing Fe 2SiS 4 and Fe 2GeS 4 materials as precursors to the absorber layer in photovoltaic thin-film devices. The objectives of the project were as follows: 1. Develop and implement one solar-related course at Delaware State University and train two graduate students in solar research. 2. Fabricate and characterize high-efficiency (larger than 7%) Fe 2SiS 4 and Fe 2GeS 4-based solar devices. The project has been successful in both the educational components, implementing the solar course at DSUmore » as well as in developing multiple routes to prepare the Fe 2GeS 4 with high purity and in large quantities. The project did not meet the efficiency objective, however, a functional solar device was demonstrated.« less

Search for the standard model higgs boson in eτ final states

DOE Office of Scientific and Technical Information (OSTI.GOV)

Howley, Ian James

2013-05-01

Presented in this dissertation is a search for the standard model (SM) Higgs boson using the DØ detector at Fermilab in Batavia, IL. The SM is a fantastically accurate theory describing the fundamental interactions and particles of the Universe. The only undiscovered particle in the SM is the Higgs boson, which is hypothesized to be responsible for electroweak symmetry breaking and giving mass to all other particles. Considered in this search is the process H + X → eτ hjj, where e is an electron, τ h is the hadronic decay of a tau, and j is a jet, using pmore » $$\\bar{p}$$ collisions at center of mass energy√s = 1.96 TeV. This search includes three production modes: associated production, gluon fusion and vector boson fusion. It also utilizes two decay channels: H→ ττ and H → WW. A new technique, dubbed the Global Boosted Decision Tree, is introduced which offers a means of providing continuity to a multivariate search as a function of a particular parameter, in this case, the mass of the Higgs boson. The observed (expected) limit on the ratio of cross section times branching fraction to the SM at 95% confidence level is 14.6 (16.0) at m H = 125 GeV. This result is combined with the related channel H + X → μτ hjj and produced an observed (expected) limit of 9.0 (11.3) at m H = 125 GeV.« less

Life cycle analysis of pistachio production in Greece.

PubMed

Bartzas, Georgios; Komnitsas, Kostas

2017-10-01

In the present paper, a life cycle assessment (LCA) study regarding pistachio (Pistacia vera L.) cultivation in Aegina island, Greece, was performed to evaluate the energy use footprint and the associated environmental impacts. In this context, a detailed life cycle inventory was created based on site-survey data and used for a holistic cradle-to-farm gate LCA analysis using the GaBi 6.5 software. The main impact categories assessed were acidification potential (AP), eutrophication potential (EP), global warming potential (GWP), ozone depletion potential (ODP), photochemical ozone creation potential (POCP) and cumulative energy demand (CED). In order to reveal the main environmental concerns pertinent to pistachio production and in turn propose measures for the reduction of environmental and energetic impacts, three scenarios were compared, namely the Baseline scenario (BS) that involves current cultivation practices, the Green Energy (GE) scenario that involves the use of biological fertilizers i.e. compost, and the Waste Utilization (WU) scenario that involves the production of biochar from pistachio and other agricultural wastes and its subsequent soil application to promote carbon sequestration and improve soil quality. Based on the results of this study, the use of compost for fertilization (GE scenario), which results in approximately 9% savings in terms of energy consumption and the five environmental impact categories studied compared to BS scenario, is considered a promising alternative cultivation strategy. Slightly higher savings (10% on average) in terms of the five calculated environmental impact categories, compared to the BS scenario, were indicated when the WU scenario was considered. Regarding energy consumption, the WU scenario results in minor increase, 3%, compared to the BS scenario. Results of uncertainty analysis performed using the Monte Carlo technique and contribution analysis showed that GE and WU scenarios offer reliable and significant eco-profile improvements for pistachio production in the study area compared to the current situation. Copyright © 2017 Elsevier B.V. All rights reserved.

Effect of strained Ge-based NMOSFETs with Ge0.93Si0.07 stressors on device layout

NASA Astrophysics Data System (ADS)

Hsu, Hung-Wen; Lee, Chang-Chun

2017-12-01

This research proposes a germanium (Ge)-based n-channel MOSFET with Ge0.93Si0.07 S/D stressor. A simulation technique is utilized to understand the layout effect of shallow trench isolation (STI) length, gate width, dummy active of diffusion (OD) length, and extended poly width on stress distribution in a channel region. Stress distribution in a channel region was simulated by ANSYS software based on finite element analysis. Furthermore, carrier mobility gain was evaluated by a second-order piezoresistance model. The piezoresistance coefficient of Ge nMOSFET varies from that of Si nMOSFET. The piezoresistance coefficient shows that longitudinal and transverse stresses are the dominant factors affecting the change in electron mobility in the channel region. For Ge-based nMOSFET, longitudinal stress tends to be tensile, whereas transverse stress tends to be compressive. Stress along channel length becomes more tensile when STI length decreases. By contrast, stress along the channel width becomes more compressive when gate width or extended poly width decreases. Electron mobility in Ge-based nMOSFET could be enhanced under the aforementioned conditions. The enhanced electron mobility becomes more significant as the device combines with a contact etching stop layer stressor. Moreover, the mobility can be improved by changing the STI length, gate width, dummy OD length, or extended poly width. This investigation systematically analyzed the relationship between layout factor and stress distribution.

Baseline Fracture Toughness and CGR testing of alloys X-750 and XM-19 (EPRI Phase I)

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. H. Jackson; S. P. Teysseyre

2012-10-01

The Advanced Test Reactor National Scientific User Facility (ATR NSUF) and Electric Power Research Institute (EPRI) formed an agreement to test representative alloys used as reactor structural materials as a pilot program toward establishing guidelines for future ATR NSUF research programs. This report contains results from the portion of this program established as Phase I (of three phases) that entails baseline fracture toughness, stress corrosion cracking (SCC), and tensile testing of selected materials for comparison to similar tests conducted at GE Global Research. The intent of this Phase I research program is to determine baseline properties for the materials ofmore » interest prior to irradiation, and to ensure comparability between laboratories using similar testing techniques, prior to applying these techniques to the same materials after having been irradiated at the Advanced Test Reactor (ATR). The materials chosen for this research are the nickel based super alloy X-750, and nitrogen strengthened austenitic stainless steel XM-19. A spare core shroud upper support bracket of alloy X-750 was purchased by EPRI from Southern Co. and a section of XM-19 plate was purchased by EPRI from GE-Hitachi. These materials were sectioned at GE Global Research and provided to INL.« less

Baseline Fracture Toughness and CGR testing of alloys X-750 and XM-19 (EPRI Phase I)

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. H. Jackson; S. P. Teysseyre

2012-02-01

The Advanced Test Reactor National Scientific User Facility (ATR NSUF) and Electric Power Research Institute (EPRI) formed an agreement to test representative alloys used as reactor structural materials as a pilot program toward establishing guidelines for future ATR NSUF research programs. This report contains results from the portion of this program established as Phase I (of three phases) that entails baseline fracture toughness, stress corrosion cracking (SCC), and tensile testing of selected materials for comparison to similar tests conducted at GE Global Research. The intent of this Phase I research program is to determine baseline properties for the materials ofmore » interest prior to irradiation, and to ensure comparability between laboratories using similar testing techniques, prior to applying these techniques to the same materials after having been irradiated at the Advanced Test Reactor (ATR). The materials chosen for this research are the nickel based super alloy X-750, and nitrogen strengthened austenitic stainless steel XM-19. A spare core shroud upper support bracket of alloy X-750 was purchased by EPRI from Southern Co. and a section of XM-19 plate was purchased by EPRI from GE-Hitachi. These materials were sectioned at GE Global Research and provided to INL.« less

Germanium photodetectors fabricated on 300 mm silicon wafers for near-infrared focal plane arrays

NASA Astrophysics Data System (ADS)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Dhar, Nibir K.; Wijewarnasuriya, Priyalal; Sood, Ashok K.

2017-09-01

SiGe p-i-n photodetectors have been fabricated on 300 mm (12") diameter silicon (Si) wafers utilizing high throughput, large-area complementary metal-oxide semiconductor (CMOS) technologies. These Ge photodetectors are designed to operate in room temperature environments without cooling, and thus have potential size and cost advantages over conventional cooled infrared detectors. The two-step fabrication process for the p-i-n photodetector devices, designed to minimize the formation of defects and threading dislocations, involves low temperature epitaxial growth of a thin p+ (boron) Ge seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) demonstrated uniform layer compositions with well defined layer interfaces and reduced dislocation density. Time-of-flight secondary ion mass spectroscopy (TOF-SIMS) was likewise employed to analyze the doping levels of the p+ and n+ layers. Current-voltage (I-V) measurements demonstrated that these SiGe photodetectors, when exposed to incident visible-NIR radiation, exhibited dark currents down below 1 μA and significant enhancement in photocurrent at -1 V. The zero-bias photocurrent was also relatively high, showing a minimal drop compared to that at -1 V bias.

Study on spectroscopic properties and effects of tungsten ions in 2Bi2O3-3GeO2/SiO2 glasses.

PubMed

Yu, Pingsheng; Su, Liangbi; Cheng, Junhua; Zhang, Xia; Xu, Jun

2017-04-01

The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass samples have been prepared by the conventional melt quenching technique. XRD patterns, absorption spectra, excitation-emission spectra and Raman measurements were utilized to characterize the synthesized glasses. When substitute SiO 2 for GeO 2 , the 0.4Bi 2 O 3 -(0.4-0.1)GeO 2 -(0.2-0.5)SiO 2 glasses exhibit strong emission centered at about 475nm (under 300nm excitation), and the decay constants are within the scope of 20-40ns. W doping into 2Bi 2 O 3 -3SiO 2 glass could increase the emission intensity of 470nm, and the W-doped 2Bi 2 O 3 -3SiO 2 glass has shown another emission at about 433nm with much shorter decay time (near 10ns). The 2Bi 2 O 3 -3GeO 2 /SiO 2 glass system could be the possible candidate for scintillator in high energy physics applications. Copyright © 2017 Elsevier Ltd. All rights reserved.

An Investigation on Ground Electrodes of Capacitive Coupling Human Body Communication.

PubMed

Mao, Jingna; Yang, Huazhong; Zhao, Bo

2017-08-01

Utilizing the body surface as the signal transmission medium, capacitive coupling human body communication (CC-HBC) can achieve a much higher energy efficiency than conventional wireless communications in future wireless body area network (WBAN) applications. Under the CC-HBC scheme, the body surface serves as the forward signal path, whereas the backward path is formed by the capacitive coupling between the ground electrodes (GEs) of transmitter (TX) and receiver (RX). So the type of communication benefits from a low forward loss, while the backward loss depending on the GE coupling strength dominates the total transmission loss. However, none of the previous works have shown a complete research on the effects of GEs. In this paper, all kinds of GE effects on CC-HBC are investigated by both finite element method (FEM) analysis and human body measurement. We set the TX GE and RX GE at different heights, separation distances, and dimensions to study the corresponding influence on the overall signal transmission path loss. In addition, we also investigate the effects of GEs with different shapes and different TX-to-RX relative angles. Based on all the investigations, an analytical model is derived to evaluate the GE related variations of channel loss in CC-HBC.

Studying Strangeness Production with HADES

NASA Astrophysics Data System (ADS)

Schuldes, Heidi

2018-02-01

The High-Acceptance DiElectron Spectrometer (HADES) operates in the 1 - 2A GeV energy regime in fixed target experiments to explore baryon-rich strongly interacting matter in heavy-ion collisions at moderate temperatures with rare and penetrating probes. We present results on the production of strange hadrons below their respective NN threshold energy in Au+Au collisions at 1.23A GeV ( = 2.4 GeV). Special emphasis is put on the enhanced feed-down contribution of ϕ mesons to the inclusive yield of K- and its implication on the measured spectral shape of K-. Furthermore, we investigate global properties of the system, confronting the measured hadron yields and transverse mass spectra with a Statistical Hadronization Model (SHM) and a blastwave parameterization, respectively. These supplement the world data of the chemical and kinetic freeze-out temperatures.

Molecular approaches to p- and n-nanoscale doping of Ge 1-ySn y semiconductors: Structural, electrical and transport properties

NASA Astrophysics Data System (ADS)

Xie, Junqi; Tolle, J.; D'Costa, V. R.; Weng, C.; Chizmeshya, A. V. G.; Menendez, J.; Kouvetakis, J.

2009-08-01

We report the development of practical doping protocols via designer molecular sources to create n- and p-type doped Ge 1-ySn y layers grown directly upon Si(1 0 0). These materials will have applications in the fabrication of advanced PIN devices that are intended to extend the infrared optical response beyond that of Ge by utilizing the Sn composition as an additional design parameter. Highly controlled and efficient n-doping of single-layer structures is achieved using custom built P(GeH 3) 3 and As(GeH 3) 3, precursors containing preformed Ge-As and Ge-P near-tetrahedral bonding arrangements compatible with the structure of the host Ge-Sn lattice. Facile substitution and complete activation of the P and As atoms at levels ˜10 17-10 19 cm -3 is obtained via in situ depositions at low temperatures (350 °C). Acceptor doping is readily achieved using conventional diborane yielding carrier concentrations between 10 17-10 19 cm -3 under similar growth conditions. Full activation of the as-grown dopant concentrations is demonstrated by combined SIMS and Hall experiments, and corroborated using a contactless spectroscopic ellipsometry approach. RTA processing of the samples leads to a significant increase in carrier mobility comparable to that of bulk Ge containing similar doping levels. The alloy scattering contribution appears to be negligible for electron carrier concentrations beyond 10 19 cm -3 in n-type samples and hole concentrations beyond 10 18 cm -3 in p-type samples. A comparative study using the classical lower-order hydrides PH 3 and AsH 3 produced n-doped films with carrier densities (up to 9 × 10 19 cm -3) similar to those afforded by P(GeH 3) 3 and As(GeH 3) 3. However, early results indicate that the simpler PH 3 and AsH 3 sources yield materials with inferior morphology and microstructure. Calculations of surface energetics using bond enthalpies suggest that the latter massive compounds bind to the surface via strong Ge-Ge bonds and likely act as "retardants" that moderate surface diffusion of the reactions species, thereby promoting layer-by-layer growth leading to thick, atomically smooth films, particularly in the case of P(GeH 3) 3. Furthermore, the intact incorporation of the Ge 3P and Ge 3As molecular cores results in highly uniform compositional, strain and doping profiles at the atomic level.

Precision measurement of the longitudinal double-spin asymmetry for inclusive jet production in polarized proton collisions at √s = 200 GeV

DOE PAGES

Adamczyk, L.

2015-08-26

We report a new measurement of the midrapidity inclusive jet longitudinal double-spin asymmetry, A LL, in polarized pp collisions at center-of-mass energy √s = 200 GeV. The STAR data place stringent constraints on polarized parton distribution functions extracted at next-to-leading order from global analyses of inclusive deep-inelastic scattering (DIS), semi-inclusive DIS, and RHIC pp data. Lastly, the measured asymmetries provide evidence at the 3σ level for positive gluon polarization in the Bjorken-x region x > 0.05 .

Design and development of wafer-level near-infrared micro-camera

NASA Astrophysics Data System (ADS)

Zeller, John W.; Rouse, Caitlin; Efstathiadis, Harry; Haldar, Pradeep; Dhar, Nibir K.; Lewis, Jay S.; Wijewarnasuriya, Priyalal; Puri, Yash R.; Sood, Ashok K.

2015-08-01

SiGe offers a low-cost alternative to conventional infrared sensor material systems such as InGaAs, InSb, and HgCdTe for developing near-infrared (NIR) photodetector devices that do not require cooling and can offer high bandwidths and responsivities. As a result of the significant difference in thermal expansion coefficients between germanium and silicon, tensile strain incorporated into Ge epitaxial layers deposited on Si utilizing specialized growth processes can extend the operational range of detection to 1600 nm and longer wavelengths. We have fabricated SiGe based PIN detector devices on 300 mm diameter Si wafers in order to take advantage of high throughput, large-area complementary metal-oxide semiconductor (CMOS) technology. This device fabrication process involves low temperature epitaxial deposition of Ge to form a thin p+ seed/buffer layer, followed by higher temperature deposition of a thicker Ge intrinsic layer. An n+-Ge layer formed by ion implantation of phosphorus, passivating oxide cap, and then top copper contacts complete the PIN photodetector design. Various techniques including transmission electron microscopy (TEM) and secondary ion mass spectrometry (SIMS) have been employed to characterize the material and structural properties of the epitaxial growth and fabricated detector devices. In addition, electrical characterization was performed to compare the I-V dark current vs. photocurrent response as well as the time and wavelength varying photoresponse properties of the fabricated devices, results of which are likewise presented.

Using Ge Secondary Phases to Enhance the Power Factor and Figure of Merit of Ge17Sb2Te20

NASA Astrophysics Data System (ADS)

Williams, Jared B.; Morelli, Donald T.

2017-05-01

Thermoelectric materials are the leading candidate today for applications in solid-state waste-heat recovery/cooling applications. Research and engineering has pushed the ZT, and overall conversion efficiency, of these materials to values which can be deemed practical for commercialization. However, many of the state-of-the-art thermoelectric materials of today utilize elements which are toxic, such as Ag, Pb, Tl, and Cd. Alloys of GeTe and Sb2Te3 were first explored for their applications in phase-change memory, because of their ability to rapidly alternate between crystalline and amorphous phases. Recently, these materials have been identified as materials with ZT ( S 2 T/ ρκ, where S is the Seebeck coefficient, ρ is the electrical resistivity, T is the operating temperature, and κ is the thermal conductivity) much greater than unity. In this work, the influence of elemental Ge as a secondary phase on transport in Ge17Sb2Te20 was explored. It was found that Ge introduces an additional scattering mechanism, which leads to increased electrical resistivity, Seebeck coefficient, and power factor values as high as 36 μW cm-1 K-2. The thermal conductivity was slightly reduced and the ZT was enhanced across the entire temperature range of measurement, with peak values greater than 2.

From elemental tellurium to Ge2Sb2Te5 melts: High temperature dynamic and relaxation properties in relationship with the possible fragile to strong transition

NASA Astrophysics Data System (ADS)

Flores-Ruiz, H.; Micoulaut, M.

2018-01-01

We investigate the dynamic properties of Ge-Sb-Te phase change melts using first principles molecular dynamics with a special emphasis on the effect of tellurium composition on melt dynamics. From structural models and trajectories established previously [H. Flores-Ruiz et al., Phys. Rev. B 92, 134205 (2015)], we calculate the diffusion coefficients for the different species, the activation energies for diffusion, the Van Hove correlation, and the intermediate scattering functions able to substantiate the dynamics and relaxation behavior of the liquids as a function of temperature and composition that is also compared to experiment whenever possible. We find that the diffusion is mostly Arrhenius-like and that the addition of Ge/Sb atoms leads to a global decrease of the jump probability and to an increase in activated dynamics for diffusion. Relaxation behavior is analyzed and used in order to evaluate the possibility of a fragile to strong transition that is evidenced from the calculated high fragility (M = 129) of Ge2Sb2Te5 at high temperatures.

Comparison and Validation of Operational Cost in Smart Houses with the Introduction of a Heat Pump or a Gas Engine

NASA Astrophysics Data System (ADS)

Shimoji, Tsubasa; Tahara, Hayato; Matayoshi, Hidehito; Yona, Atsushi; Senjyu, Tomonobu

2015-02-01

Due to the concerns of global warming and the depletion of energy resources, renewable energies such as wind generation (WG) and photovoltaic generation (PV) are gaining attention in distribution systems. Efficient electric equipment such as heat pumps (HP) not only contribute low levels of carbon to society, but are also beneficial for consumers. In addition, gas instruments such as the gas engine (GE) and fuel cells (FC) are expected to reduce electricity cost by exhaust heat. Thus, it is important to clarify which systems (HP or GE) are more beneficial for consumers throughout the year. This paper compares the operational cost for the smart house between using the HP and the GE. Current electricity and gas prices are used to calculate the cost of the smart house. The system considered in this research comprises a PV, battery, solar collector (SC), uncontrolled load and either an HP or a GE. In order to verify the effectiveness of the proposed system, MATLAB is used for simulations.

Interfacial band alignment and structural properties of nanoscale TiO2 thin films for integration with epitaxial crystallographic oriented germanium

NASA Astrophysics Data System (ADS)

Jain, N.; Zhu, Y.; Maurya, D.; Varghese, R.; Priya, S.; Hudait, M. K.

2014-01-01

We have investigated the structural and band alignment properties of nanoscale titanium dioxide (TiO2) thin films deposited on epitaxial crystallographic oriented Ge layers grown on (100), (110), and (111)A GaAs substrates by molecular beam epitaxy. The TiO2 thin films deposited at low temperature by physical vapor deposition were found to be amorphous in nature, and high-resolution transmission electron microscopy confirmed a sharp heterointerface between the TiO2 thin film and the epitaxially grown Ge with no traceable interfacial layer. A comprehensive assessment on the effect of substrate orientation on the band alignment at the TiO2/Ge heterointerface is presented by utilizing x-ray photoelectron spectroscopy and spectroscopic ellipsometry. A band-gap of 3.33 ± 0.02 eV was determined for the amorphous TiO2 thin film from the Tauc plot. Irrespective of the crystallographic orientation of the epitaxial Ge layer, a sufficient valence band-offset of greater than 2 eV was obtained at the TiO2/Ge heterointerface while the corresponding conduction band-offsets for the aforementioned TiO2/Ge system were found to be smaller than 1 eV. A comparative assessment on the effect of Ge substrate orientation revealed a valence band-offset relation of ΔEV(100) > ΔEV(111) > ΔEV(110) and a conduction band-offset relation of ΔEC(110) > ΔEC(111) > ΔEC(100). These band-offset parameters are of critical importance and will provide key insight for the design and performance analysis of TiO2 for potential high-κ dielectric integration and for future metal-insulator-semiconductor contact applications with next generation of Ge based metal-oxide field-effect transistors.

Domesticated, Genetically Engineered, and Wild Plant Relatives Exhibit Unintended Phenotypic Differences: A Comparative Meta-Analysis Profiling Rice, Canola, Maize, Sunflower, and Pumpkin

PubMed Central

Hernández-Terán, Alejandra; Wegier, Ana; Benítez, Mariana; Lira, Rafael; Escalante, Ana E.

2017-01-01

Agronomic management of plants is a powerful evolutionary force acting on their populations. The management of cultivated plants is carried out by the traditional process of human selection or plant breeding and, more recently, by the technologies used in genetic engineering (GE). Even though crop modification through GE is aimed at specific traits, it is possible that other non-target traits can be affected by genetic modification due to the complex regulatory processes of plant metabolism and development. In this study, we conducted a meta-analysis profiling the phenotypic consequences of plant breeding and GE, and compared modified cultivars with wild relatives in five crops of global economic and cultural importance: rice, maize, canola, sunflower, and pumpkin. For these five species, we analyzed the literature with documentation of phenotypic traits that are potentially related to fitness for the same species in comparable conditions. The information was analyzed to evaluate whether the different processes of modification had influenced the phenotype in such a way as to cause statistical differences in the state of specific phenotypic traits or grouping of the organisms depending on their genetic origin [wild, domesticated with genetic engineering (domGE), and domesticated without genetic engineering (domNGE)]. In addition, we tested the hypothesis that, given that transgenic plants are a construct designed to impact, in many cases, a single trait of the plant (e.g., lepidopteran resistance), the phenotypic differences between domGE and domNGE would be either less (or inexistent) than between the wild and domesticated relatives (either domGE or domNGE). We conclude that (1) genetic modification (either by selective breeding or GE) can be traced phenotypically when comparing wild relatives with their domesticated relatives (domGE and domNGE) and (2) the existence and the magnitude of the phenotypic differences between domGE and domNGE of the same crop suggest consequences of genetic modification beyond the target trait(s). PMID:29259610

Consumer Demand Management

DOE Office of Scientific and Technical Information (OSTI.GOV)

Borlase, Stuart; Chassin, David P.; Horst, Gale R.

2012-10-24

The title of the book is: Smart Grids: Infrastructure, Technology, and Solutions. The publisher is CRC Press (an imprint of Taylor & Francis Group). The book will be marketed, distributed and sold by CRC Press. The intended audiences for the book are utilities, vendors, regulators, consumers, educators and other parties interested in learning more about the drivers and technologies of smart grid initiatives in the electric utility industry. The book is based on author contributions. Authors contributing to the book will be doing so on a volunteer basis and will not be financially compensated for their contributions. Contributing authors willmore » be recognized in each chapter of the book, but only my name will be listed as the editor of the book. The responsibility of the editor of the book is to include a broad cross-section of material from vendors, utilities and other industry partners and organizations while providing as much of an unbiased and global perspective on Smart Grid as possible. The editor works for General Electric, but the book is an independent publication and does not belong to, nor is represented, affiliated with, or sponsored by, GE, in any form or fashion. This is a book chapter that Dave Chassin is required to send to the publisher by the end of the April 2011. The ERICA submission should indicate that it is copyrighted material and will be distributed by the publisher (CRC). It is getting an external editorial review, which should be done by tomorrow.« less

High Quality GaAs Growth by MBE on Si Using GeSi Buffers and Prospects for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Carlin, J. A.; Ringel, S. A.; Fitzgerald, E. A.; Bulsara, M.

2005-01-01

III-V solar cells on Si substrates are of interest for space photovoltaics since this would combine high performance space cells with a strong, lightweight and inexpensive substrate. However, the primary obstacles blocking III-V/Si cells from achieving high performance to date have been fundamental materials incompatabilities, namely the 4% lattice mismatch between GaAs and Si, and the large mismatch in thermal expansion coefficient. In this paper, we report on the molecular beam epitaxial (MBE) growth and properties of GaAs layers and single junction GaAs cells on Si wafers which utilize compositionally graded GeSi Intermediate buffers grown by ultra-high vacuum chemical vapor deposition (UHVCVD) to mitigate the large lattice mismatch between GaAs and Si. Ga As cell structures were found to incorporate a threading dislocation density of 0.9-1.5 x 10 (exp 6) per square centimeter, identical to the underlying relaxed Ge cap of the graded buffer, via a combination of transmission electron microscopy, electron beam induced current, and etch pit density measurements. AlGaAs/GaAs double heterostructures wre grown on the GeSi/Si substrates for time-resolved photoluminescence measurements, which revealed a bulk GaAs minority carrier lifetime in excess of 10 ns, the highest lifetime ever reported for GaAs on Si. A series of growth were performed to ass3ss the impact of a GaAs buffer to a thickness of only 0.1 micrometer. Secondary ion mass spectroscopy studies revealed that there is negligible cross diffusion of Ga, As and Ge at he III-V/Ge interface, identical to our earlier findings for GaAs grown on Ge wafers using MBE. This indicates that there is no need for a buffer to "bury" regions of high autodopjing,a nd that either pn or np configuration cells are easily accomodated by these substrates. Preliminary diodes and single junction Al Ga As heteroface cells were grown and fabricated on the Ge/GeSi/Si substrates for the first time. Diodes fabricated on GaAs, Ge and Ge/GeSi/Si substrate show nearly identical I-V characteristics in both forward and reverse bias regions. External quantum efficiencies of AlGaAs/GaAs cell structures grown on Ge/GeSi/Si and Ge substrates demonstrated nearly identical photoresponse, which indicates that high lifetimes, diffusion lengths and efficient minority carrier collection is maintained after complete cell processing.

Combined search for the Standard Model Higgs boson using up to 4.9 fb⁻¹ of pp collision data at √s = 7 TeV with the ATLAS detector at the LHC

DOE PAGES

Aad, G.; Abbott, B.; Abdallah, J.; ...

2012-03-01

A combined search for the Standard Model Higgs boson with the ATLAS experiment at the LHC using datasets corresponding to integrated luminosities from 1.04 fb⁻¹ to 4.9 fb⁻¹ of pp collisions collected at √s=7 TeV is presented. The Higgs boson mass ranges 112.9–115.5 GeV, 131–238 GeV and 251–466 GeV are excluded at the 95% confidence level (CL), while the range 124–519 GeV is expected to be excluded in the absence of a signal. An excess of events is observed around m H~126 GeV with a local significance of 3.5 standard deviations (σ ). The local significances of H → γγ,more » H → ZZ(⁎) → ℓ⁺ℓ⁻ℓ′⁺ℓ′⁻ and H → WW(⁎) → ℓ⁺νℓ′⁻ν¯, the three most sensitive channels in this mass range, are 2.8σ, 2.1σ and 1.4σ, respectively. The global probability for the background to produce such a fluctuation anywhere in the explored Higgs boson mass range 110–600 GeV is estimated to be ~1.4% or, equivalently, 2.2σ.« less

Spatially-resolved HPGe Gamma-ray Spectroscopy of Swipe Samples

DOE Office of Scientific and Technical Information (OSTI.GOV)

McDonald, Benjamin S.; VanDevender, Brent A.; Wood, Lynn S.

Measurement of swipe samples is a critical element of the National Technical Nuclear Forensics (NTNF) mission. A unique, portable, germanium gamma imager (GeGI-s) from PHDS Co may provide complementary information to current techniques for swipe sample screening. The GeGI-s is a modified version of the commercial GeGI-4, a planar HPGe detector, capable of several million counts per second across the whole detector. The GeGI-s detector is a prototype of a commercial off-the-shelf high rate GeGI. The high rate capability allows high-activity samples be placed directly on the face of the detector. Utilizing the high energy resolution and pixelization of themore » detector, the GeGI-s can generate isotope specific spatial maps of the materials on the swipe sample. To prove this technology is viable for such mapping, the GeGI-s detector response to spatially distributed events must be well characterized. The detection efficiency as a function of location has been characterized to understand the non-uniformities presented as a collimated photon beam was rastered vertically and horizontally across the face of the detector. The detection efficiency as a function of location has been characterized to understand the non-uniformities presented as a collimated photon beam was rastered vertically and horizontally across the face of the detector. The response was found to be primarily uniform and symmetric, however two causes of non-uniformity were found. Both of these causes can ultimately be corrected for in off-line data analysis.« less

Ultrasmall Fe2GeO4 nanodots anchored on interconnected carbon nanosheets as high-performance anode materials for lithium and sodium ion batteries

NASA Astrophysics Data System (ADS)

Han, Jinzhi; Qin, Jian; Guo, Lichao; Qin, Kaiqiang; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; He, Fang; Ma, Liying; He, Chunnian

2018-01-01

Poor intrinsic conductivity and huge volume expansion during charge/discharge process greatly limit the development of Ge-based ternary oxide as anode material for both lithium-ion batteries and sodium-ion batteries. To alleviate these issues, an ideal strategy is developed to achieve active particle nanocrystallization and composite with conductive carbon materials, simultaneously. Therefore, ultrasmall Fe2GeO4 nanodots (∼4.6 nm) uniformly and tightly anchored on 3D interconnected N-doped ultrathin carbon nanosheets (3D Fe2GeO4/N-CNSs) were constructed via one-step high temperature calcination process. This unique hybrid nanostructure can not only effectively enhance electron conductivity but also restrict the aggregation and volume fluctuation of Fe2GeO4 during the charge/discharge process. As a result, the 3D Fe2GeO4/N-CNSs electrode exhibited excellent electrochemical performances for both lithium-ion and sodium-ion battery anodes. When utilized for lithium-ion battery anode, the electrode delivered a highly reversible specific capacity (1280 mA h g-1 at 0.4 A g-1 after 180 cycles). It is the first time that Fe2GeO4 was applied for sodium-ion battery anode, which showed a remarkable rate capability (350 mA h g-1 at 0.1 A g-1 and 180 mA h g-1 at 22.8 A g-1), and ultralong cycling stability (∼86% reversible capacity retention after 6000 cycles).

Modeling and in Situ Probing of Surface Reactions in Atomic Layer Deposition.

PubMed

Zheng, Yuanxia; Hong, Sungwook; Psofogiannakis, George; Rayner, G Bruce; Datta, Suman; van Duin, Adri C T; Engel-Herbert, Roman

2017-05-10

Atomic layer deposition (ALD) has matured into a preeminent thin film deposition technique by offering a highly scalable and economic route to integrate chemically dissimilar materials with excellent thickness control down to the subnanometer regime. Contrary to its extensive applications, a quantitative and comprehensive understanding of the reaction processes seems intangible. Complex and manifold reaction pathways are possible, which are strongly affected by the surface chemical state. Here, we report a combined modeling and experimental approach utilizing ReaxFF reactive force field simulation and in situ real-time spectroscopic ellipsometry to gain insights into the ALD process of Al 2 O 3 from trimethylaluminum and water on hydrogenated and oxidized Ge(100) surfaces. We deciphered the origin for the different peculiarities during initial ALD cycles for the deposition on both surfaces. While the simulations predicted a nucleation delay for hydrogenated Ge(100), a self-cleaning effect was discovered on oxidized Ge(100) surfaces and resulted in an intermixed Al 2 O 3 /GeO x layer that effectively suppressed oxygen diffusion into Ge. In situ spectroscopic ellipsometry in combination with ex situ atomic force microscopy and X-ray photoelectron spectroscopy confirmed these simulation results. Electrical impedance characterizations evidenced the critical role of the intermixed Al 2 O 3 /GeO x layer to achieve electrically well-behaved dielectric/Ge interfaces with low interface trap density. The combined approach can be generalized to comprehend the deposition and reaction kinetics of other ALD precursors and surface chemistry, which offers a path toward a theory-aided rational design of ALD processes at a molecular level.

Tailoring mechanical and antibacterial properties of chitosan/gelatin nanofiber membranes with Fe3O4 nanoparticles for potential wound dressing application

NASA Astrophysics Data System (ADS)

Cai, Ning; Li, Chao; Han, Chao; Luo, Xiaogang; Shen, Liang; Xue, Yanan; Yu, Faquan

2016-04-01

In this work, magnetic Fe3O4 nanoparticles (NPs) were utilized to improve the mechanical and antibacterial properties of chitosan (CS)/gelatin (GE) composite nanofiber membranes. Homogeneous Fe3O4/CS/GE nanofibers were electrospun successfully. Scanning electron microscopy (SEM) and transmission electron microscopy (TEM) images confirmed the presence of well-dispersed Fe3O4 NPs in the composite nanofibers. Fourier transform infrared spectroscopy (FTIR) spectra revealed the effective interactions of Fe3O4 NPs to the composite matrix through hydrogen bonding. The improvement on the thermal stability of the Fe3O4/CS/GE was observed by differential scanning calorimetry (DSC) and thermo gravimetric analysis (TGA), which is tightly correlated to strong filler-matrix adhesion. The incorporation of Fe3O4 NPs resulted in a substantial enhancement of mechanical properties. The optimum mechanical performance was demonstrated on 1 wt% Fe3O4/CS/GE nanofiber membranes, achieving 155% augment of Young's modulus, 128% increase of tensile strength, and 100% boost of toughness from CS/GE. The excellent mechanical enhancement can be explained by the effective dispersion of fillers and the filler-matrix interactions, which ensures the efficient load transfer from CS/GE matrix to Fe3O4 nanofillers. Moreover, zones of inhibition for Escherichia coli and Staphylococcus aureus expanded markedly with the supplement of Fe3O4 NPs. In all, nanofiber membranes made of Fe3O4/CS/GE composite with tailored mechanical and antibacterial properties appear a promising wound dressing material.

A&M. TAN633. Utilities plan and profiles. Layout of TAN633 in ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

A&M. TAN-633. Utilities plan and profiles. Layout of TAN-633 in relation to neighboring buildings: actuator building, pool building, water filter building, liquid waste treatment plant, and buried storage tanks. Ralph M. Parsons 1229-13-ANP/GE-3-301-U-1. Date: December 1956. INEEL index code no. 034-0301-00-693-107311 - Idaho National Engineering Laboratory, Test Area North, Scoville, Butte County, ID

Issues in Acceleration of A Muon Beam for a Neutrino Factory

DOE Office of Scientific and Technical Information (OSTI.GOV)

J. Delayen; D. Douglas; L. Harwood

2001-06-01

We have developed a concept for acceleration of a large phase-space, pulsed muon beam from 190 MeV to 50 GeV as part of a collaborative study of the feasibility of a neutrino factory based on in-flight decay of muons. The muon beam's initial energy spread was {approximately}20% and each bunch has the physical size of a soccer ball. Production of the muons will be quite expensive, so prevention of loss due to scraping or decay is critical. The former drives the system to large apertures and the latter calls for high real-estate-average gradients. The solution to be presented utilizes amore » 3 GeV linac to capture the beam, a 4-pass recirculating linac to get the beam to 10 GeV, and then a 5-pass linac to get the beam to 50 GeV. Throughout the system, longitudinal dynamics issues far outweighed transverse dynamics issues. This paper focuses on the issues surrounding the choice of superconducting rf structures over copper structures.« less

Thermal oxidation of Si/SiGe heterostructures for use in quantum dot qubits

NASA Astrophysics Data System (ADS)

Neyens, Samuel F.; Foote, Ryan H.; Knapp, T. J.; McJunkin, Thomas; Savage, D. E.; Lagally, M. G.; Coppersmith, S. N.; Eriksson, M. A.

Here we demonstrate dry thermal oxidation of a Si/SiGe heterostructure at 700°C and use a Hall bar device to measure the mobility after oxidation to be 43,000 cm2V-1s-1 at a carrier density of 4.1 ×1011 cm-2. Surprisingly, we find no significant reduction in mobility compared with an Al2O3 device made with atomic layer deposition on the same heterostructure, indicating thermal oxidation can be used to process Si/SiGe quantum dot devices. This result provides a path for investigating improvements to the gate oxide in Si/SiGe qubit devices, whose performance is believed to be limited by charge noise in the oxide layer. This work was supported in part by ARO (W911NF-12-0607) and NSF (DMR-1206915 and PHY-1104660). Development and maintenance of the growth facilities used for fabricating samples is supported by DOE (DE-FG02-03ER46028). This research utilized NSF-supported shared facilities at the University of Wisconsin-Madison.

Immunomodulatory Efficacy of Standardized Annona muricata (Graviola) Leaf Extract via Activation of Mitogen-Activated Protein Kinase Pathways in RAW 264.7 Macrophages

PubMed Central

2016-01-01

Annona muricata, commonly known as Graviola, has been utilized as a traditional medicine to treat various human diseases. The aim of this study was to examine the immune-enhancing activity of Graviola leaf extracts in RAW 264.7 macrophage cells. Active ingredients in Graviola leaf extracts (GE) were identified as kaempferol-3-O-rutinoside and quercetin-3-O-rutinoside by LC-MS/MS. When treated with steam or 50% ethanol GE, cell morphology was altered due to initiation of cell differentiation. While the cell viability was not altered by the steam GE, it was reduced by the ethanol GE. Both steam and ethanol GE induced the transcriptional expression of cytokines, including tumor necrosis factor-α (TNF-α) and interleukin-1β, but only the steam extract upregulated inducible nitric oxide synthase (iNOS). In consistence with mRNA expression, the production of TNF-α and nitrite was elevated by both steam and ethanol extracts of Graviola leaves. This is mainly due to activation of mitogen-activated protein (MAP) kinase signaling pathways. These results suggest that Graviola leaves enhance immunity by activation of the MAP kinase pathways. These bioactive properties of Graviola indicate its potential as a health-promoting ingredient to boost the immune system. PMID:28096884

Proximity of f0(1500 ) and f0(1710 ) to the scalar glueball

NASA Astrophysics Data System (ADS)

Fariborz, Amir H.; Azizi, Azizollah; Asrar, Abdorreza

2015-12-01

Within a nonlinear chiral Lagrangian framework, the underlying mixings among quark-antiquark, four-quark and glue components of f0(1500 ) and f0(1710 ) are studied in a global picture that includes all isosinglet scalar mesons below 2 GeV. The quark components are introduced in the Lagrangian in terms of two separate nonets (a quark-antiquark nonet and a four-quark nonet) which can mix with each other and with a scalar glueball. An iterative Monte Carlo simulation is developed to study the 14 free parameters of the Lagrangian by a simultaneous fit to more than 20 experimental data and constraints on the mass spectrum, decay widths, and decay ratios of the isosinglet scalars below 2 GeV. Moreover, constraints on the mass spectrum and decay widths of isodoublet and isovector scalars below 2 GeV as well as pion-pion scattering amplitude are also taken into account. In the leading order of the model and within the overall experimental uncertainties, the ranges of variation of the model parameters are determined. This leads to a set of points in the 14-dimensional parameter space at which the overall disagreement with experiment is no larger than the overall experimental uncertainties. The insights gained in this global picture, due to the complexities of the mixings as well as the experimental uncertainties, are mainly qualitative but are relatively robust, and reveal that the lowest scalar glueball hides between f0(1500 ) and f0(1710 ) , resulting in a considerable mixing with various quark components of these two states. The overall current experimental and theoretical uncertainties do not allow us to pin down the exact glue components of isosinglet states; nevertheless it is shown that the f0(1500 ) and f0(1710 ) have the highest glue component. While this global study does not allow precision predictions for each individual state, it provides useful "family" correlations among the isosinglet states that are found insightful in probing the substructure of scalars, in general, and the isosinglets, in particular. Specifically, a close correlation between the substructure of isosinglets below and above 1 GeV is observed. It is shown that as the simulations approach the limit where the f0(500 ) and f0(980 ) become the two isosinglet members of an ideally mixed two-quark two-antiquark nonet (which is widely believed to be a good approximation), the f0(1500 ) develops a large glue component. The overall estimate of the scalar glueball mass is found to be 1.58 ±0.18 GeV .

78 FR 32467 - Employment and Training Administration

Federal Register 2010, 2011, 2012, 2013, 2014

2013-05-30

... Services Global Services, Supply Chain Mgmt. 82,603 General Electric (GE) Ravenna, OH March 26, 2012... directly competitive with articles produced or services supplied by such firm have increased; (B) imports... using services supplied by such firm, have increased; and (4) the increase in imports contributed...

Managing fatigue in operational settings I : physiological considerations and countermeasures

DOT National Transportation Integrated Search

1996-01-01

Modern society has evolved to rely increasingly on 24-hour operations in many diverse settings. Furthermore, the requirement for 24-hour operations will grow as the United States competes in the 24-hour global economy. Humans are hard-wired with a ge...

Shape and structure of N=Z ^64Ge; Electromagnetic transition rates from the application of the Recoil Distance Method to knock-out reactions.

NASA Astrophysics Data System (ADS)

Starosta, K.; Dewald, A.

2007-04-01

Transition rate measurements are reported for the 2^+1 and 2^+2 states in the N=Z nucleus ^64Ge. The measurement was done utilizing the Recoil Distance Method (RDM) and a unique combination of state of the art instruments at the National Superconducting Cyclotron Laboratory (NSCL). States of interest were populated via an intermediate energy single neutron knock-out reaction. RDM studies of knock-out and fragmentation reaction products hold the promise of reaching far from stability and providing lifetime information for intermediate-spin excited states in a wide range of exotic nuclei. The large-scale Shell Model calculations applying the recently developed GXPF1A interaction are in excellent agreement with the above results. Theoretical analysis suggests that ^64Ge is a collective γ-soft anharmonic vibrator.

An experiment to study the nuclear component of primary cosmic rays

NASA Technical Reports Server (NTRS)

Paul, J. M.; Verma, S. D.

1971-01-01

An apparatus has been designed and is being fabricated to study the charge composition, fluxes, and energy spectra of light nuclei in the energy region from 1 GeV to 100 GeV. The apparatus essentially consists of an array of a large number of particle detectors operated in coincidence and serving as a charged particle telescope. A mosaic silicon semiconductor detector, a plastic scintillation counter and a lucite Cerenkov detector are used to measure the charges of the incident nuclei. Two one-inch thick CsI detectors are used to study low energy particles. An ionization spectrometer is utilized to measure primary energies in the 1 to 100 GeV energy interval. A gas Cerenkov counter is being designed to distinguish between electrons and protons. It is planned to calibrate the apparatus at an accelerator using particles of known energy.

MeV Si ion modifications on the thermoelectric generators from Si/Si + Ge superlattice nano-layered films

NASA Astrophysics Data System (ADS)

Budak, S.; Heidary, K.; Johnson, R. B.; Colon, T.; Muntele, C.; Ila, D.

2014-08-01

The performance of thermoelectric materials and devices is characterized by a dimensionless figure of merit, ZT = S2σT/K, where, S and σ denote, respectively, the Seebeck coefficient and electrical conductivity, T is the absolute temperature in Kelvin and K represents the thermal conductivity. The figure of merit may be improved by means of raising either S or σ or by lowering K. In our laboratory, we have fabricated and characterized the performance of a large variety of thermoelectric generators (TEG). Two TEG groups comprised of 50 and 100 alternating layers of Si/Si + Ge multi-nanolayered superlattice films have been fabricated and thoroughly characterized. Ion beam assisted deposition (IBAD) was utilized to assemble the alternating sandwiched layers, resulting in total thickness of 300 nm and 317 nm for 50 and 100 layer devices, respectively. Rutherford Backscattering Spectroscopy (RBS) was employed in order to monitor the precise quantity of Si and Ge utilized in the construction of specific multilayer thin films. The material layers were subsequently impregnated with quantum dots and/or quantum clusters, in order to concurrently reduce the cross plane thermal conductivity, increase the cross plane Seebeck coefficient and raise the cross plane electrical conductivity. The quantum dots/clusters were implanted via the 5 MeV Si ion bombardment which was performed using a Pelletron high energy ion beam accelerator. We have achieved remarkable results for the thermoelectric and optical properties of the Si/Si + Ge multilayer thin film TEG systems. We have demonstrated that with optimal setting of the 5 MeV Si ion beam bombardment fluences, one can fabricate TEG systems with figures of merits substantially higher than the values previously reported.

The 1000 bull genome project

USDA-ARS?s Scientific Manuscript database

To meet growing global demands for high value protein from milk and meat, rates of genetic gain in domestic cattle must be accelerated. At the same time, animal health and welfare must be considered. The 1000 bull genomes project supports these goals by providing annotated sequence variants and ge...

Gravitational black-holes-hedgehogs and two degenerate vacua of the Universe

NASA Astrophysics Data System (ADS)

Sidharth, B. G.; Das, C. R.; Laperashvili, L. V.; Nielsen, H. B.

In the present paper, assuming the Multiple Point Principle (MPP) as a new law of Nature, we considered the existence of the two degenerate vacua of the Universe: the first Electroweak (EW) vacuum at v1 ≈ 246GeV — “true vacuum”, and the second Planck scale “false vacuum” at v2 ˜ 1018 GeV. In these vacua, we investigated different topological defects. The main aim of this paper is an investigation of the black-hole-hedgehogs configurations as defects of the false vacuum. In the framework of the f(R) gravity, described by the Gravi-Weak unification model, we considered a black-hole solution, which corresponds to a “hedgehog” — global monopole, that has been “swallowed” by the black-hole with mass core MBH ˜ 1018GeV and radius δ ˜ 10‑21GeV‑1. Considering the results of the hedgehog lattice theory in the framework of the SU(2) Yang-Mills gauge-invariant theory with hedgehogs in the Wilson loops, we have used the critical value of temperature for the hedgehogs confinement phase (Tc ˜ 1018GeV). This result gave us the possibility to conclude that the SM shows a new physics with contributions of the SU(2)-triplet Higgs bosons at the scale ˜10TeV. Theory predicts the stability of the EW-vacuum and the accuracy of the MPP.

Quasi-perpetual discharge behaviour in p-type Ge-air batteries.

PubMed

Ocon, Joey D; Kim, Jin Won; Abrenica, Graniel Harne A; Lee, Jae Kwang; Lee, Jaeyoung

2014-11-07

Metal-air batteries continue to become attractive energy storage and conversion systems due to their high energy and power densities, safer chemistries, and economic viability. Semiconductor-air batteries - a term we first define here as metal-air batteries that use semiconductor anodes such as silicon (Si) and germanium (Ge) - have been introduced in recent years as new high-energy battery chemistries. In this paper, we describe the excellent doping-dependent discharge kinetics of p-type Ge anodes in a semiconductor-air cell employing a gelled KOH electrolyte. Owing to its Fermi level, n-type Ge is expected to have lower redox potential and better electronic conductivity, which could potentially lead to a higher operating voltage and better discharge kinetics. Nonetheless, discharge measurements demonstrated that this prediction is only valid at the low current regime and breaks down at the high current density region. The p-type Ge behaves extremely better at elevated currents, evident from the higher voltage, more power available, and larger practical energy density from a very long discharge time, possibly arising from the high overpotential for surface passivation. A primary semiconductor-air battery, powered by a flat p-type Ge as a multi-electron anode, exhibited an unprecedented full discharge capacity of 1302.5 mA h gGe(-1) (88% anode utilization efficiency), the highest among semiconductor-air cells, notably better than new metal-air cells with three-dimensional and nanostructured anodes, and at least two folds higher than commercial Zn-air and Al-air cells. We therefore suggest that this study be extended to doped-Si anodes, in order to pave the way for a deeper understanding on the discharge phenomena in alkaline metal-air conversion cells with semiconductor anodes for specific niche applications in the future.

Evaluation of Hardware and Software for a Small Autonomous Underwater Vehicle Navigation System (SANS)

DTIC Science & Technology

1994-09-01

Hyslop , G.L., Schieber, G.E., Schwartz, M.K., "Automated Mission Planning for the Standoff Land Attack Missile (SLAM)", Proceedings of the...1993, pp. 277-290. [PARK80] Parkinson, B.W., "Overview", Global Positioning System, Vol. 1, The Institute of Navigation, Washington, D.C., 1980 , pp...Navigation Message", Global Positioning System, Vol. 1, The Institute of Navigation, Washington, D.C., 1980 , pp. 55-73. 139 [WOOD851 Wooden, W. H

Transverse spin-dependent azimuthal correlations of charged pion pairs measured in p↑ + p collisions at √{ s } = 500 GeV

NASA Astrophysics Data System (ADS)

Adamczyk, L.; Adams, J. R.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bairathi, V.; Barish, K.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bryslawskyj, J.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, J. H.; Chen, X.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Dedovich, T. G.; Deng, J.; Deppner, I. M.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fujita, J.; Fulek, L.; Gagliardi, C. A.; Geurts, F.; Gibson, A.; Girard, M.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Herrmann, N.; Hirsch, A.; Horvat, S.; Huang, X.; Huang, H. Z.; Huang, T.; Huang, B.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kapukchyan, D.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kim, C.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Krauth, L.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, W.; Li, C.; Li, X.; Li, Y.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, Y.; Liu, H.; Liu, F.; Liu, P.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Luo, S.; Ma, L.; Ma, Y. G.; Ma, G. L.; Ma, R.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Mayes, D.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nemes, D. B.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seto, R.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Shen, W. Q.; Shi, S. S.; Shi, Z.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Stewart, D. J.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, X.; Sun, X. M.; Sun, Y.; Surrow, B.; Svirida, D. N.; Tang, Z.; Tang, A. H.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Tu, B.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, Y.; Wang, F.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, G.; Xie, W.; Xu, N.; Xu, Y. F.; Xu, Q. H.; Xu, Z.; Yang, Y.; Yang, C.; Yang, S.; Yang, Q.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Zbroszczyk, H.; Zha, W.; Zhang, J. B.; Zhang, J.; Zhang, S.; Zhang, J.; Zhang, S.; Zhang, Z.; Zhang, Y.; Zhang, L.; Zhang, X. P.; Zhao, J.; Zhong, C.; Zhou, C.; Zhou, L.; Zhu, X.; Zhu, Z.; Zyzak, M.

2018-05-01

The transversity distribution, which describes transversely polarized quarks in transversely polarized nucleons, is a fundamental component of the spin structure of the nucleon, and is only loosely constrained by global fits to existing semi-inclusive deep inelastic scattering (SIDIS) data. In transversely polarized p↑ + p collisions it can be accessed using transverse polarization dependent fragmentation functions which give rise to azimuthal correlations between the polarization of the struck parton and the final state scalar mesons. This letter reports on spin dependent di-hadron correlations measured by the STAR experiment. The new dataset corresponds to 25 pb-1 integrated luminosity of p↑ + p collisions at √{ s } = 500 GeV, an increase of more than a factor of ten compared to our previous measurement at √{ s } = 200 GeV. Non-zero asymmetries sensitive to transversity are observed at a Q2 of several hundred GeV and are found to be consistent with the former measurement and a model calculation. We expect that these data will enable an extraction of transversity with comparable precision to current SIDIS datasets but at much higher momentum transfers where subleading effects are suppressed.

High density mapping of a resistance gene to Ug99 from an Iranian landrace

USDA-ARS?s Scientific Manuscript database

Managing the disease wheat stem rust caused by Puccinia graminis f. sp. tritici (Pgt) including the highly virulent race TTKSK is imperative for the preservation of global food security. The most effective strategy for managing this potentially devastating disease is pyramiding several resistance ge...

Application of JLab 12GeV helium refrigeration system for the FRIB accelerator at MSU

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ganni, Venkatarao; Knudsen, Peter N.; Arenius, Dana M.

The planned approach to have a turnkey helium refrigeration system for the MSU-FRIB accelerator system, encompassing the design, fabrication, installation and commissioning of the 4.5-K refrigerator cold box(es), cold compression system, warm compression system, gas management, oil removal and utility/ancillary systems, was found to be cost prohibitive. Following JLab’s suggestion, MSU-FRIB accelerator management made a formal request to evaluate the applicability of the recently designed 12GeV JLab cryogenic system for this application. The following paper will outline the findings and the planned approach for the FRIB helium refrigeration system.

Photoluminescence properties of Li2SrGeO4:RE3+ (RE = Ce/Tb/Dy) phosphors and enhanced luminescence through energy transfer between Ce3+ and Tb3+/Dy3+

NASA Astrophysics Data System (ADS)

Huang, Shuai; Li, Guogang

2014-07-01

Li2SrGeO4:RE3+ (RE = Tb/Dy/Ce) phosphors were prepared by the conventional solid-state reaction. X-ray diffraction (XRD), photoluminescence (PL) spectra, and lifetimes were utilized to characterize samples. Under the excitation of ultraviolet (231 nm for Tb3+ and 351 nm for Dy3+), the Li2SrGeO4:Tb3+ and Li2SrGeO4:Dy3+ phosphors show their respective characteristic emissions of Tb3+ (5D3,4 → 7FJ‧, J‧ = 3, 4, 5, 6) and Dy3+ (4F9/2 → 6H15/2 and 4F9/2 → 6H13/2), respectively. Ce3+ activated Li2SrGeO4 phosphors exhibit broad band blue emission due to the 5d-4f transition of Ce3+. Co-doping Ce3+ into the LSG: Ce3+/Dy3+ samples enhances the luminescence intensity of Tb3+ and Dy3+ significantly under the excitation wavelength at 340 nm through energy transfer from Ce3+ to Tb3+/Dy3+. In addition, the energy transfer mechanism between Ce3+ and Tb3+/Dy3+ has been demonstrated to be a resonant type via a dipole-quadrupole interaction.

Melt Infiltrated Ceramic Matrix Composites for Shrouds and Combustor Liners of Advanced Industrial Gas Turbines

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gregory Corman; Krishan Luthra; Jill Jonkowski

2011-01-07

This report covers work performed under the Advanced Materials for Advanced Industrial Gas Turbines (AMAIGT) program by GE Global Research and its collaborators from 2000 through 2010. A first stage shroud for a 7FA-class gas turbine engine utilizing HiPerComp{reg_sign}* ceramic matrix composite (CMC) material was developed. The design, fabrication, rig testing and engine testing of this shroud system are described. Through two field engine tests, the latter of which is still in progress at a Jacksonville Electric Authority generating station, the robustness of the CMC material and the shroud system in general were demonstrated, with shrouds having accumulated nearly 7,000more » hours of field engine testing at the conclusion of the program. During the latter test the engine performance benefits from utilizing CMC shrouds were verified. Similar development of a CMC combustor liner design for a 7FA-class engine is also described. The feasibility of using the HiPerComp{reg_sign} CMC material for combustor liner applications was demonstrated in a Solar Turbines Ceramic Stationary Gas Turbine (CSGT) engine test where the liner performed without incident for 12,822 hours. The deposition processes for applying environmental barrier coatings to the CMC components were also developed, and the performance of the coatings in the rig and engine tests is described.« less

Development of FIR arrays with integrating amplifiers

NASA Technical Reports Server (NTRS)

Young, Erick T.

1988-01-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Development of FIR arrays with integrating amplifiers

NASA Astrophysics Data System (ADS)

Young, Erick T.

1988-08-01

The development of optimized photoconductor arrays suitable for far infrared space astronomical applications are described. Although the primary impetus is the production of a 16 by 16 element Ge:Ga demonstration array for SIRTF, the extension of this technology to Large Deployable Reflector (LDR) is considered. The optimization of Ge:Ga and Ge:Be photoconductor materials is discussed. In collaboration with Lawrence Berkeley Laboratory, measurements of FIR photoconductors with quantum efficiencies greater than 20 percent at 100 micrometers, and dark currents below 300 electrons/s are presented. Integrating J-FET amplifier technology is discussed. The current generation of integrating amplifiers has a demonstrated read noise of less than 20 electrons for an integration time of 100 s. The design is shown for a stackable 16 x n Ge:Ga array that utilizes a 16-channel monolithic version of the J-FET integrator. A part of the design is the use of a thin, thermally insulating substrate that allows the electronics to operate at the optimum temperature of 50 K while maintaining thermal and optical isolation from the detectors at 2 K. The power dissipation for the array is less than 16 mW. The array design may particularly be applicable to high resolution imaging spectrometers for LDR.

Temperature sensors based on multimode chalcogenide fibre Bragg gratings

NASA Astrophysics Data System (ADS)

Zhang, Qian; Zeng, Jianghui; Zhu, Liang; Yang, Dandan; Zhang, Peiqing; Xu, Yinsheng; Wang, Xunsi; Nie, Qiuhua; Dai, Shixun

2018-04-01

In this work, a theoretical study was conducted on temperature sensing in Ge-Sb-Se multimode fibre Bragg grating (MM-FBG). The sensing characteristics of the designed MM-FBGs with different fibre parameters and operating wavelengths were calculated using a coupled model method. The temperature sensitivity of this MM-FBG was found to improve significantly by shifting the operating wavelength from telecom range to mid-infrared (MIR) and utilizing the wide transmission range of Ge-Sb-Se glasses. The temperature sensitivity of the proposed Ge-Sb-Se MM-FBG was calculated to be 0.0758 nm/°C at 1550 nm, which is 7.58 times higher than silica FBGs at 1550 nm, and the temperature sensitivity was calculated to be more than 0.16 nm/°C at 3390 nm, which is 2.2 times higher than that at 1550 nm. In addition, the proposed MM-FBGs provided multi-peak information, and the sensitivity of each peak was calculated to be comparable to the single-mode FBG. The proposed Ge-Sb-Se MM-FBG has great potential for temperature sensing in MIR because of its advantages of simple preparation, high coupling efficiency, multi-peak information and wide working window.

Role of chemically and thermally induced crystal lattice distortion in enhancing the Seebeck coefficient in complex tellurides

DOE PAGES

Levin, E. M.; Iowa State Univ., Ames, IA; Kramer, M. J.; ...

2016-07-14

Composition and crystal structure of complex materials can significantly change the Seebeck effect, i.e., heat to electrical energy conversion, which is utilized in thermoelectric materials. Despite decades of studies of various thermoelectric materials and their application, the fundamental understanding of this effect still is limited. One of the most efficient groups of thermoelectric materials is based on GeTe, where Ge is replaced by [Ag + Sb], i.e., Ag xSb xGe 50-2xTe 50 alloys, traditionally shown as (GeTe) m(AgSbTe 2) 100-m (TAGS-m series). Here, in this article, we report on the discovery of two unique phenomena in TAGS materials attributed tomore » the effects from [Ag + Sb] atoms: (i) a linear relation between the Seebeck coefficient and rhombohedral lattice distortion, and (ii) resonance-like temperature-induced behavior of the contribution to the Seebeck coefficient produced by [Ag + Sb] atoms. Finally, our findings show that heat to electrical energy conversion strongly depends on the temperature- and compositionally-induced rhombohedral to cubic transformation where [Ag + Sb] atoms play a crucial mediating role.« less

Probing flavor models with ^{ {76}}Ge-based experiments on neutrinoless double-β decay

NASA Astrophysics Data System (ADS)

Agostini, Matteo; Merle, Alexander; Zuber, Kai

2016-04-01

The physics impact of a staged approach for double-β decay experiments based on ^{ {76}}Ge is studied. The scenario considered relies on realistic time schedules envisioned by the Gerda and the Majorana collaborations, which are jointly working towards the realization of a future larger scale ^{ {76}}Ge experiment. Intermediate stages of the experiments are conceived to perform quasi background-free measurements, and different data sets can be reliably combined to maximize the physics outcome. The sensitivity for such a global analysis is presented, with focus on how neutrino flavor models can be probed already with preliminary phases of the experiments. The synergy between theory and experiment yields strong benefits for both sides: the model predictions can be used to sensibly plan the experimental stages, and results from intermediate stages can be used to constrain whole groups of theoretical scenarios. This strategy clearly generates added value to the experimental efforts, while at the same time it allows to achieve valuable physics results as early as possible.

ARSENITE EXPOSURE CAUSES BOTH HYPOMETHYLATION AND HYPERMETHYLATION IN HUMAN CELL LINES IN CULTURE AT LOW CONCENTRATIONS

EPA Science Inventory

We and others have hypothesized that a mechanism of arsenic carcinogenesis could involve alteration of DNA methylation since this process utilizes a methyltransferase and consumes S-adenosylmethionine (SAM) as the methyl donor. We analyzed differentially methylated regions of ge...

Specific energy yield comparison between crystalline silicon and amorphous silicon based PV modules

NASA Astrophysics Data System (ADS)

Ferenczi, Toby; Stern, Omar; Hartung, Marianne; Mueggenburg, Eike; Lynass, Mark; Bernal, Eva; Mayer, Oliver; Zettl, Marcus

2009-08-01

As emerging thin-film PV technologies continue to penetrate the market and the number of utility scale installations substantially increase, detailed understanding of the performance of the various PV technologies becomes more important. An accurate database for each technology is essential for precise project planning, energy yield prediction and project financing. However recent publications showed that it is very difficult to get accurate and reliable performance data of theses technologies. This paper evaluates previously reported claims the amorphous silicon based PV modules have a higher annual energy yield compared to crystalline silicon modules relative to their rated performance. In order to acquire a detailed understanding of this effect, outdoor module tests were performed at GE Global Research Center in Munich. In this study we examine closely two of the five reported factors that contribute to enhanced energy yield of amorphous silicon modules. We find evidence to support each of these factors and evaluate their relative significance. We discuss aspects for improvement in how PV modules are sold and identify areas for further study further study.

Activation of Myeloid-Derived Suppressor Cells in Bone Marrow

DTIC Science & Technology

2013-12-01

tumormodelwas utilized to establish the causal relationship between PTHrP and CD11bþGr1þ cells. Ace-1 prostate cancer cells produce predominantly osteoblas...2012;19:243–54. 20. Park SI, Kim SJ, McCauley LK, Gallick GE. Pre-clinical mouse models of human prostate cancer and their utility in drug discovery...microenvironment. Clin Cancer Res 2010; 16:924–35. 33. Huang YF, Harrison JR, Lorenzo JA, Kream BE. Parathyroid hor- mone induces interleukin-6

Current status of the CALET mission

NASA Astrophysics Data System (ADS)

Mori, Masaki

2017-01-01

The CALorimeteric Electron Telescope (CALET) is a Japanese-led international mission being developed as part of the utilization plan for the International Space Station (ISS). CALET was launched by an H-II B rocket utilizing the Japanese developed HTV (H-II Transfer Vehicle) in August 2015, and has been measuring high-energy electrons, cosmic rays as well as gamma rays above 10 GeV to about 10 TeV with high accuracy. In this paper we describe the current status of the CALET mission focused on gamma-ray observations.

Research Report for GeSCI Meta-Review of ICT in Education

ERIC Educational Resources Information Center

LeBaron, John; McDonough, Elizabeth

2009-01-01

The purpose of this research is to provide a multi-disciplinary, multi-methodological meta-review of literature for understanding the global complexity and exponential growth of information and communication technologies (ICT). The scope of the literature review behind this research is limited to studies published between 2006 and 2008. It…

Sustaining the future of plant breeding: The critical role of the USDA-ARS National Plant Germplasm System

USDA-ARS?s Scientific Manuscript database

Plant breeders require genetic diversity in their breeding programs to develop cultivars that are productive, nutritious, tolerant of biotic and abiotic stresses, and make efficient use of water and fertilizer. The USDA-ARS National Plant Germplasm System (NPGS) is a major source for global plant ge...

Collaborations Move Industry Forward, Prove Mutually Beneficial | News |

Science.gov Websites

features collaboration between NREL and GE Global Research, which is advancing its use of NREL's Simulator researchers to better understand wind farm flow physics so future wind farms can be more optimally designed Colorado will join in interpreting the data. "Wind farm control is garnering interest across the

Development of magnesium-based biodegradable metals with dietary trace element germanium as orthopaedic implant applications.

PubMed

Bian, Dong; Zhou, Weirui; Deng, Jiuxu; Liu, Yang; Li, Wenting; Chu, Xiao; Xiu, Peng; Cai, Hong; Kou, Yuhui; Jiang, Baoguo; Zheng, Yufeng

2017-12-01

From the perspective of element biosafety and dietetics, the ideal alloying elements for magnesium should be those which are essential to or naturally presented in human body. Element germanium is a unique metalloid in the carbon group, chemically similar to its group neighbors, Si and Sn. It is a dietary trace element that naturally presents in human body. Physiological role of Ge is still unanswered, but it might be necessary to ensure normal functioning of the body. In present study, novel magnesium alloys with dietary trace element Ge were developed. Feasibility of those alloys to be used as orthopaedic implant applications was systematically evaluated. Mg-Ge alloys consisted of α-Mg matrix and eutectic phases (α-Mg + Mg 2 Ge). Mechanical properties of Mg-Ge alloys were comparable to current Mg-Ca, Mg-Zn and Mg-Sr biodegradable metals. As-rolled Mg-3Ge alloy exhibited outstanding corrosion resistance in vitro (0.02 mm/y, electrochemical) with decent corrosion rate in vivo (0.6 mm/y, in rabbit tibia). New bone could directly lay down onto the implant and grew along its surface. After 3 months, bone and implant were closely integrated, indicating well osseointegration being obtained. Generally, this is a pioneering study on the in vitro and in vivo performances of novel Mg-Ge based biodegradable metals, and will benefit the future development of this alloy system. The ideal alloying elements for magnesium-based biodegradable metals should be those which are essential to or naturally presented in human body. Element germanium is a unique metalloid in the carbon group. It is a dietary trace element that naturally presents in human body. In present study, feasibility of Mg-Ge alloys to be utilized as orthopedic applications was systematically investigated, mainly focusing on the microstructure, mechanical property, corrosion behavior and biocompatibility. Our findings showed that Mg-3Ge alloy exhibited superior corrosion resistance to current Mg-Ca, Mg-Zn and Mg-Sr alloys with favorable biocompatibility. This is a pioneering study on the in vitro &in vivo performances of Mg-Ge biodegradable metals, and will benefit the future development of this alloy system. Copyright © 2017 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Advancing the understanding of progression in multiple sclerosis: an interview with Shibeshih Belachew.

PubMed

Belachew, Shibeshih

2018-02-01

Shibeshih Belachew speaks to Laura Dormer, Commissioning Editor: Dr Shibeshih Belachew, MD, PhD, is a Senior Medical Director for Multiple Sclerosis (MS) Disease Area in Global Product Development Medical Affairs at Roche (Basel, Switzerland). Prior to joining Roche in January 2016, he was Director of MS Franchise and Head of Medical Director's office for Biogen Region Europe and Canada. Previously at Biogen he also served as a Director in Global Neurology for the natalizumab program in Cambridge (MA, USA). Prior to joining industry, he was a Clinical Professor of Neurology at the University of Liège in Belgium. Shibeshih completed neurology postgraduate training at the University of Liège and has a PhD in Biomedical Science in the field of Developmental Neurobiology. Shibeshih has been a post-doctoral fellow in the Laboratory of Cellular and Synaptic Neurophysiology at the National Institutes of Health (Bethesda, MD, USA) and later at the Center for Neuroscience Research of Children's National Medical Center in Washington DC. He is a member of the Belgian Neurological Society.

On-demand virtual optical network access using 100 Gb/s Ethernet.

PubMed

Ishida, Osamu; Takamichi, Toru; Arai, Sachine; Kawate, Ryusuke; Toyoda, Hidehiro; Morita, Itsuro; Araki, Soichiro; Ichikawa, Toshiyuki; Hoshida, Takeshi; Murai, Hitoshi

2011-12-12

Our Terabit LAN initiatives attempt to enhance the scalability and utilization of lambda resources. This paper describes bandwidth-on-demand virtualized 100GE access to WDM networks on a field fiber test-bed using multi-domain optical-path provisioning. © 2011 Optical Society of America

Coming to a town near you: corporate globalization and its impact on massachusetts workers.

PubMed

Mattera, Nancy Della; Gaudet, Jennifer

2002-01-01

This report examines five themes of globalization: trade agreements and job loss; corporate growth; outsourcing and privatization; downward wage pressures; and immigration. We begin with an overview that connects each of these themes to the Massachusetts experience and highlights the corporate strategies that are affecting this experience. These themes are then interwoven throughout the three case studies that follow: "forced supplier migration" at a GE supply plant in Wilmington; outsourced dining service workers at Harvard; and the transformation of the fish processing industry in New Bedford.

A precision measurement of the spin structure functions g

NASA Astrophysics Data System (ADS)

Toole, Terrence S.

In Experiment E155 at the Stanford Linear Accelerator Center, the spin dependent structure function g1(x, Q 2) was measured for both the proton and deuteron. This was accomplished by scattering 48.3 GeV highly polarized electrons (0.813 +/- 0.020) off polarized 15NH3 (proton) and 6LiD (deuteron) targets. Data were collected in March and April of 1997 using three fixed angle, momentum analyzing spectrometers centered at 2.75°, 5.5°, and 10.5°. This enabled a kinematic coverage of 0.01 < x < 0.9 and 1 GeV2 < Q2 < 40 GeV2. At an average Q2 of 5 GeV2, the integrals in the measured region were ∑0.0140.9 g1 (x)dx = 0.119 +/- 0.002(stat.) +/- 0.009(syst.) for the proton and 0.043 +/- 0.003(stat.) +/- 0.003(syst.) for the deuteron. Using a perturbative QCD analysis which included a global data set, the results were found to be consistent with the Bjorken Sum Rule. Asymmetry measurements also were made using photoproduced hadrons. Data were collected concurrently with the g1 data. For the proton, the asymmetries were small and non-zero. The deuteron measurements were consistent with zero.

Longitudinal Double-Spin Asymmetry ALL for Inclusive Jet Production in Polarized Proton Collisions at √s = 510 GeV

NASA Astrophysics Data System (ADS)

Quintero, Amilkar; STAR Collaboration

2017-09-01

The STAR experiment at the Relativistic Heavy-Ion Collider (RHIC) at Brookhaven National Laboratory is carrying out a spin physics program in high-energy polarized proton collisions at center of mass energies up to 510 GeV, to gain a deeper insight into the spin structure and dynamics of the proton. The polarized gluon distribution function can be constrained in longitudinally polarized proton collisions through jet / di-jet production. Recent global analyses, which include results of the measurement of ALL for inclusive jet production at 200 GeV at mid-rapidity at the STAR experiment, provide evidence of a non-zero gluon polarization in the measured range of partonic momentum fraction of approximately 0.05

Modeling artificial graphene in Si/SiGe hetrostructures

NASA Astrophysics Data System (ADS)

Maurer, Leon; Gamble, John King; Moussa, Jonathan; Tracy, Lisa; Huang, Shih-Hsien; Chuang, Yen; Li, Jiun-Yun; Liu, Chih-Wen; Lu, Tzu-Ming

Artificial graphene is a synthetic material made using a nanostructure with identical 2D potential wells arranged in a honeycomb lattice. Unlike normal graphene, the properties of artificial graphene can be controlled by changing the nanostructure geometry and adjusting applied voltages. We perform a theoretical study of artificial graphene formed from a 2D electron gas (2DEG) in Si/SiGe and Ge/SiGe heterostructures by a metal honeycomb gate and a global top gate. While many models of artificial graphene assume a simple form for the potential landscape in the 2DEG, we instead calculate the potential landscape for actual devices with a range of bias voltages and geometries. This allows us to find the resulting bandstructure and calculate transport parameters, which we compare directly to experimental results. Sandia is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the US Department of Energy's National Nuclear Security Administration under Contract No. DE-AC04-94AL85000. This work was funded by the Laboratory Directed Research and Development Program. The work at NTU was supported by the Ministry of Science and Technology (103-2622-E-002-031 and 103-2112-M- 002-002-MY3).

SiGe epitaxial memory for neuromorphic computing with reproducible high performance based on engineered dislocations

NASA Astrophysics Data System (ADS)

Choi, Shinhyun; Tan, Scott H.; Li, Zefan; Kim, Yunjo; Choi, Chanyeol; Chen, Pai-Yu; Yeon, Hanwool; Yu, Shimeng; Kim, Jeehwan

2018-01-01

Although several types of architecture combining memory cells and transistors have been used to demonstrate artificial synaptic arrays, they usually present limited scalability and high power consumption. Transistor-free analog switching devices may overcome these limitations, yet the typical switching process they rely on—formation of filaments in an amorphous medium—is not easily controlled and hence hampers the spatial and temporal reproducibility of the performance. Here, we demonstrate analog resistive switching devices that possess desired characteristics for neuromorphic computing networks with minimal performance variations using a single-crystalline SiGe layer epitaxially grown on Si as a switching medium. Such epitaxial random access memories utilize threading dislocations in SiGe to confine metal filaments in a defined, one-dimensional channel. This confinement results in drastically enhanced switching uniformity and long retention/high endurance with a high analog on/off ratio. Simulations using the MNIST handwritten recognition data set prove that epitaxial random access memories can operate with an online learning accuracy of 95.1%.

Identification of Appropriate Reference Genes for Normalization of miRNA Expression in Grafted Watermelon Plants under Different Nutrient Stresses

PubMed Central

Wu, Weifang; Deng, Qin; Shi, Pibiao; Yang, Jinghua; Hu, Zhongyuan; Zhang, Mingfang

2016-01-01

Watermelon (Citrullus lanatus) is a globally important crop belonging to the family Cucurbitaceae. The grafting technique is commonly used to improve its tolerance to stress, as well as to enhance its nutrient uptake and utilization. It is believed that miRNA is most likely involved in its nutrient-starvation response as a graft-transportable signal. The quantitative real-time reverse transcriptase polymerase chain reaction is the preferred method for miRNA functional analysis, in which reliable reference genes for normalization are crucial to ensure the accuracy. The purpose of this study was to select appropriate reference genes in scion (watermelon) and rootstocks (squash and bottle gourd) of grafted watermelon plants under normal growth conditions and nutrient stresses (nitrogen and phosphorus starvation). Under nutrient starvation, geNorm identified miR167c and miR167f as two most stable genes in both watermelon leaves and squash roots. miR166b was recommended by both geNorm and NormFinder as the best reference in bottle gourd roots under nutrient limitation. Expression of a new Cucurbitaceae miRNA, miR85, was used to validate the reliability of candidate reference genes under nutrient starvation. Moreover, by comparing several target genes expression in qRT-PCR analysis with those in RNA-seq data, miR166b and miR167c were proved to be the most suitable reference genes to normalize miRNA expression under normal growth condition in scion and rootstock tissues, respectively. This study represents the first comprehensive survey of the stability of miRNA reference genes in Cucurbitaceae and provides valuable information for investigating more accurate miRNA expression involving grafted watermelon plants. PMID:27749935

Identification of Appropriate Reference Genes for Normalization of miRNA Expression in Grafted Watermelon Plants under Different Nutrient Stresses.

PubMed

Wu, Weifang; Deng, Qin; Shi, Pibiao; Yang, Jinghua; Hu, Zhongyuan; Zhang, Mingfang

2016-01-01

Watermelon (Citrullus lanatus) is a globally important crop belonging to the family Cucurbitaceae. The grafting technique is commonly used to improve its tolerance to stress, as well as to enhance its nutrient uptake and utilization. It is believed that miRNA is most likely involved in its nutrient-starvation response as a graft-transportable signal. The quantitative real-time reverse transcriptase polymerase chain reaction is the preferred method for miRNA functional analysis, in which reliable reference genes for normalization are crucial to ensure the accuracy. The purpose of this study was to select appropriate reference genes in scion (watermelon) and rootstocks (squash and bottle gourd) of grafted watermelon plants under normal growth conditions and nutrient stresses (nitrogen and phosphorus starvation). Under nutrient starvation, geNorm identified miR167c and miR167f as two most stable genes in both watermelon leaves and squash roots. miR166b was recommended by both geNorm and NormFinder as the best reference in bottle gourd roots under nutrient limitation. Expression of a new Cucurbitaceae miRNA, miR85, was used to validate the reliability of candidate reference genes under nutrient starvation. Moreover, by comparing several target genes expression in qRT-PCR analysis with those in RNA-seq data, miR166b and miR167c were proved to be the most suitable reference genes to normalize miRNA expression under normal growth condition in scion and rootstock tissues, respectively. This study represents the first comprehensive survey of the stability of miRNA reference genes in Cucurbitaceae and provides valuable information for investigating more accurate miRNA expression involving grafted watermelon plants.

Measurement of the cross section and longitudinal double-spin asymmetry for dijet production in polarized p p collisions at √{s }=200 GeV

NASA Astrophysics Data System (ADS)

Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Barish, K.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, X.; Chen, X.; Chen, J. H.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fujita, J.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, S.; Gupta, A.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, T.; Huang, B.; Huang, H. Z.; Huang, X.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kapukchyan, D.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kim, C.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Krauth, L.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, W.; Li, C.; Li, Y.; Li, X.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, H.; Liu, F.; Liu, Y.; Liu, P.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, X.; Luo, S.; Ma, R.; Ma, G. L.; Ma, L.; Ma, Y. G.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seto, R.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, A.; Sharma, M. K.; Shen, W. Q.; Shi, S. S.; Shi, Z.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Strikhanov, M.; Stringfellow, B.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, X.; Sun, X. M.; Sun, Y.; Surrow, B.; Svirida, D. N.; Tang, A. H.; Tang, Z.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, F.; Wang, Y.; Webb, G.; Webb, J. C.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, W.; Xie, G.; Xu, Y. F.; Xu, Q. H.; Xu, N.; Xu, Z.; Xu, J.; Yang, Y.; Yang, S.; Yang, C.; Yang, Q.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, S.; Zhang, J. B.; Zhang, Y.; Zhang, J.; Zhang, J.; Zhang, S.; Zhang, X. P.; Zhang, Z.; Zhao, J.; Zhong, C.; Zhou, C.; Zhou, L.; Zhu, Z.; Zhu, X.; Zyzak, M.; STAR Collaboration

2017-04-01

We report the first measurement of the longitudinal double-spin asymmetry AL L for midrapidity dijet production in polarized p p collisions at a center-of-mass energy of √{s }=200 GeV . The dijet cross section was measured and is shown to be consistent with next-to-leading order (NLO) perturbative QCD predictions. AL L results are presented for two distinct topologies, defined by the jet pseudorapidities, and are compared to predictions from several recent NLO global analyses. The measured asymmetries, the first such correlation measurements, support those analyses that find positive gluon polarization at the level of roughly 0.2 over the region of Bjorken-x >0.05 .

Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate

NASA Technical Reports Server (NTRS)

Choi, Sang; King, Glen; Park, Yeonjoon

2009-01-01

SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than plus or minus 10 deg.) sapphire (0001) substrate can be used to improve epitaxial relationships better by providing attractive atomic steps in the epitaxial process.

Organ biodistribution of Germanium-68 in rat in the presence and absence of [68Ga]Ga-DOTA-TOC for the extrapolation to the human organ and whole-body radiation dosimetry

PubMed Central

Velikyan, Irina; Antoni, Gunnar; Sörensen, Jens; Estrada, Sergio

2013-01-01

Positron Emission Tomography (PET) and in particular gallium-68 (68Ga) applications are growing exponentially worldwide contributing to the expansion of nuclear medicine and personalized management of patients. The significance of 68Ga utility is reflected in the implementation of European Pharmacopoeia monographs. However, there is one crucial point in the monographs that might limit the use of the generators and consequently expansion of 68Ga applications and that is the limit of 0.001% of Germanium-68 (68Ge(IV)) radioactivity content in a radiopharmaceutical. We have investigated the organ distribution of 68Ge(IV) in rat and estimated human dosimetry parameters in order to provide experimental evidence for the determination and justification of the 68Ge(IV) limit. Male and female rats were injected in the tail vein with formulated [68Ge]GeCl4 in the absence or presence of [68Ga]Ga-DOTA-TOC. The tissue radioactivity distribution data was extrapolated for the estimation of human organ equivalent doses and total effective dose using Organ Level Internal Dose Assessment Code software (OLINDA/EXM). 68Ge(IV) was evenly distributed among the rat organs and fast renal excretion prevailed. Human organ equivalent dose and total effective dose estimates indicated that the kidneys were the dose-limiting organs (185±54 μSv/MBq for female and 171±38 μSv/MBq for male) and the total effective dose was 15.5±0.1 and 10.7±1.2 μSv/MBq, respectively for female and male. The results of this dosimetry study conclude that the 68Ge(IV) limit currently recommended by monographs could be increased considerably (>100 times) without exposing the patient to harm given the small absorbed doses to normal organs and fast excretion. PMID:23526484

Perspectives on the future of the electric utility industry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tonn, B.; Schaffhauser, A.

1994-04-01

This report offers perspectives on the future of the electric utility industry. These perspectives will be used in further research to assess the prospects for Integrated Resource Planning (IRP). The perspectives are developed first by examining economic, political and regulatory, societal, technological, and environmental trends that are (1) national and global in scope and (2) directly related to the electric utility industry. Major national and global trends include increasing global economic competition, increasing political and ethnic strife, rapidly changing technologies, and increasing worldwide concern about the environment. Major trends in the utility industry include increasing competition in generation; changing patternsmore » of electricity demand; increasing use of information technology to control power systems; and increasing implementation of environmental controls. Ways in which the national and global trends may directly affect the utility industry are also explored. The trends are used to construct three global and national scenarios- ``business as usual,`` ``technotopia future,`` and ``fortress state`` -and three electric utility scenarios- ``frozen in headlights,`` ``megaelectric,`` and ``discomania.`` The scenarios are designed to be thought provoking descriptions of potential futures, not predictions of the future, although three key variables are identified that will have significant impacts on which future evolves-global climate change, utility technologies, and competition. While emphasis needs to be placed on understanding the electric utility scenarios, the interactions between the two sets of scenarios is also of interest.« less

78 FR 3441 - Privacy Act of 1974; Department of Homeland/U.S. Customs and Border Protection-002 Global...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-01-16

... information sharing relationships, CBP is able to make well-informed decisions on GE applications of citizens... notice that individuals may view and edit their information through their online accounts, as well as... decisions in the form of a ``pass/fail.'' The following information is collected on SVRS registered...

Cross Section Measurements of the 76Ge (n ,n' γ) Reaction

NASA Astrophysics Data System (ADS)

Crider, B. P.; Peters, E. E.; Prados-Estévez, F. M.; Ross, T. J.; McEllistrem, M. T.; Yates, S. W.; Vanhoy, J. R.

2013-10-01

Neutrinoless double-beta decay (0 νββ) is a topic of great current interest and, as such, is the focus of several experiments and international collaborations. Two of these experiments, Majorana and GERDA, are seeking evidence of 0 νββ in the decay of 76Ge, where the signal would appear as a sharp peak in the energy spectrum at the Q-value of the reaction plus a small amount of recoil energy, or 2039 keV. Due to the high sensitivity of such a measurement, knowledge of background lines is critical. A study of 76Ga β- decay into 76Ge revealed a 2040.70(25)-keV transition from the 3951.70(14)-keV level, which, if populated, could potentially be a background line of concern. In addition to β- decay from 76Ga, a potential population mechanism could be cosmic-ray-induced inelastic neutron scattering. Measurements of the neutron-induced cross section of the 3951.70-keV level have been performed utilizing the 76 Ge (n ,n' γ) reaction at the University of Kentucky at neutron energies ranging from 4.3 to 4.9 MeV. This material is based upon work is supported by the U.S. National Science Foundation under grant no. PHY-0956310.

Modeling of GE Appliances: Cost Benefit Study of Smart Appliances in Wholesale Energy, Frequency Regulation, and Spinning Reserve Markets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fuller, Jason C.; Parker, Graham B.

This report is the second in a series of three reports describing the potential of GE’s DR-enabled appliances to provide benefits to the utility grid. The first report described the modeling methodology used to represent the GE appliances in the GridLAB-D simulation environment and the estimated potential for peak demand reduction at various deployment levels. The third report will explore the technical capability of aggregated group actions to positively impact grid stability, including frequency and voltage regulation and spinning reserves, and the impacts on distribution feeder voltage regulation, including mitigation of fluctuations caused by high penetration of photovoltaic distributed generation.more » In this report, a series of analytical methods were presented to estimate the potential cost benefit of smart appliances while utilizing demand response. Previous work estimated the potential technical benefit (i.e., peak reduction) of smart appliances, while this report focuses on the monetary value of that participation. The effects on wholesale energy cost and possible additional revenue available by participating in frequency regulation and spinning reserve markets were explored.« less

New color-octet axial vector boson revisited

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Hao; Wang Youkai; Institute of Theoretical Physics, Chinese Academy of Sciences, Beijing 100190

2011-11-01

In this paper we reexamine how to utilize the previous proposed color-octet axial-vector boson Z{sub C} to explain the 3.4{sigma} anomaly of tt forward-backward (FB) asymmetry A{sub FB} for m{sub tt}>450 GeV observed by CDF. Our numerical results indicate that the best-fit parameters are g{sub A}{sup q}=0.07, g{sub A}{sup Q}=3, and M{sub C}=440 GeV, which are obtained by fitting the mass dependent A{sub FB} and total cross section data provided by a recent CDF measurement. Here g{sub A}{sup q}(g{sub A}{sup Q}) and M{sub C} are the axial couplings among Z{sub C} with the first two (the third) generation quarks, andmore » Z{sub C} mass, respectively. We also calculate one-side forward-backward asymmetry A{sub OFB} for top and bottom quark pair production at the LHC, focusing on the new contributions from Z{sub C}. Our studies show that A{sub OFB} can be utilized to measure the properties of new particle Z{sub C}.« less

Two-dimensional strain profiles in patients with physiological and pathological hypertrophy and preserved left ventricular systolic function: a comparative analyses.

PubMed

Afonso, Luis; Kondur, Ashok; Simegn, Mengistu; Niraj, Ashutosh; Hari, Pawan; Kaur, Ramanjit; Ramappa, Preeti; Pradhan, Jyotiranjan; Bhandare, Deepti; Williams, Kim A; Zalawadiya, Sandip; Pinheiro, Aurelio; Abraham, Theodore P

2012-01-01

This study was designed to examine the utility of two-dimensional strain (2DS) or speckle tracking imaging to typify functional adaptations of the left ventricle in variant forms of left ventricular hypertrophy (LVH). Cross-sectional study. Urban tertiary care academic medical centres. A total of 129 subjects, 56 with hypertrophic cardiomyopathy (HCM), 34 with hypertensive left ventricular hypertrophy (H-LVH), 27 professional athletes with LVH (AT-LVH) and 12 healthy controls in sinus rhythm with preserved left ventricular systolic function. Conventional echocardiographic and tissue Doppler examinations were performed in all study subjects. Bi-dimensional acquisitions were analysed to map longitudinal systolic strain (automated function imaging, AFI, GE Healthcare, Waukesha, Wisconsin, USA) from apical views. Subjects with HCM had significantly lower regional and average global peak longitudinal systolic strain (GLS-avg) compared with controls and other forms of LVH. Strain dispersion index, a measure of regional contractile heterogeneity, was higher in HCM compared with the rest of the groups. On receiver operator characteristics analysis, GLS-avg had excellent discriminatory ability to distinguish HCM from H-LVH area under curve (AUC) (0.893, p<0.001) or AT-LVH AUC (0.920, p<0.001). Tissue Doppler and LV morphological parameters were better suited to differentiate the athlete heart from HCM. 2DS (AFI) allows rapid characterisation of regional and global systolic function and may have the potential to differentiate HCM from variant forms of LVH.

SPS market analysis

NASA Astrophysics Data System (ADS)

Goff, H. C.

1980-05-01

A market analysis task included personal interviews by GE personnel and supplemental mail surveys to acquire statistical data and to identify and measure attitudes, reactions and intentions of prospective small solar thermal power systems (SPS) users. Over 500 firms were contacted, including three ownership classes of electric utilities, industrial firms in the top SIC codes for energy consumption, and design engineering firms. A market demand model was developed which utilizes the data base developed by personal interviews and surveys, and projected energy price and consumption data to perform sensitivity analyses and estimate potential markets for SPS.

Team Formation in Partially Observable Multi-Agent Systems

NASA Technical Reports Server (NTRS)

Agogino, Adrian K.; Tumer, Kagan

2004-01-01

Sets of multi-agent teams often need to maximize a global utility rating the performance of the entire system where a team cannot fully observe other teams agents. Such limited observability hinders team-members trying to pursue their team utilities to take actions that also help maximize the global utility. In this article, we show how team utilities can be used in partially observable systems. Furthermore, we show how team sizes can be manipulated to provide the best compromise between having easy to learn team utilities and having them aligned with the global utility, The results show that optimally sized teams in a partially observable environments outperform one team in a fully observable environment, by up to 30%.

Evolution of microstructural defects of TiO2 nanocrystals by Zr4+ or/and Ge4+ doping lead to high disinfection efficiency for CWAs

NASA Astrophysics Data System (ADS)

Shen, Zhong; Zhong, Jin-Yi; Chai, Na-Na; He, Xin; Zang, Jian-Zheng; Xu, Hui; Han, Xiao-Yuan; Zhang, Peng

2017-06-01

Zr4+, Ge4+ doped and co-doped TiO2 nanoparticles were prepared by a 'one-pot' homogeneous precipitation method. The photocatalytic reaction kinetics of DMMP and the disinfection efficiency of HD, GD and VX on the samples were investigated. By means of a variety of characterization methods, especially the positron annihilation lifetime spectroscopy, the changes in structure and property of TiO2 across doping were studied. The results show that the reasonable engineering design of novel photocatalysts in the field of CWAs decontamination can be realized by adjusting the bulk-to-surface defects ratio, except for crystal structure, specific surface area, pore size distribution and light utilization.

Observation of FeGe skyrmions by electron phase microscopy with hole-free phase plate

NASA Astrophysics Data System (ADS)

Kotani, Atsuhiro; Harada, Ken; Malac, Marek; Salomons, Mark; Hayashida, Misa; Mori, Shigeo

2018-05-01

We report application of hole-free phase plate (HFPP) to imaging of magnetic skyrmion lattices. Using HFPP imaging, we observed skyrmions in FeGe, and succeeded in obtaining phase contrast images that reflect the sample magnetization distribution. According to the Aharonov-Bohm effect, the electron phase is shifted by the magnetic flux due to sample magnetization. The differential processing of the intensity in a HFPP image allows us to successfully reconstruct the magnetization map of the skyrmion lattice. Furthermore, the calculated phase shift due to the magnetization of the thin film was consistent with that measured by electron holography experiment, which demonstrates that HFPP imaging can be utilized for analysis of magnetic fields and electrostatic potential distribution at the nanoscale.

Evaluation of innate immune stimulating activity of polysaccharides using a silkworm (Bombyx mori) muscle contraction assay.

PubMed

Fujiyuki, T; Hamamoto, H; Ishii, K; Urai, M; Kataoka, K; Takeda, T; Shibata, S; Sekimizu, K

2012-04-01

In silkworm larvae, the mature form of paralytic peptide (PP), an insect cytokine, is produced from pro-PP in association with activation of innate immune responses, resulting in slow muscle contraction. We utilized this reaction, muscle contraction in silkworms coupled with innate immunity stimulation, to quantitatively measure the innate immune stimulating activity of various natural polysaccharides. β-Glucan of Gyrophora esculenta (GE-3), fucoidan from sporophyll of Undaria pinnatifida, and curldan induced silkworm muscle contraction. We further demonstrated that GE-3 had therapeutic effects on silkworms infected by baculovirus. Based on these findings, we propose that the silkworm muscle contraction assay is useful for screening substances that stimulate innate immunity before evaluating therapeutic effectiveness in mammals.

(1-Adamantyl)methyl glycidyl ether: a versatile building block for living polymerization.

PubMed

Moers, Christian; Wrazidlo, Robert; Natalello, Adrian; Netz, Isabelle; Mondeshki, Mihail; Frey, Holger

2014-06-01

(1-Adamantyl)methyl glycidyl ether (AdaGE) is introduced as a versatile monomer for oxyanionic polymerization, enabling controlled incorporation of adamantyl moieties in aliphatic polyethers. Via copolymerization with ethoxyethyl glycidyl ether (EEGE) and subsequent cleavage of the acetal protection groups of EEGE, hydrophilic linear polyglycerols with an adjustable amount of pendant adamantyl moieties are obtained. The adamantyl unit permits control over thermal properties and solubility profile of these polymers (LCST). Additionally, AdaGE is utilized as a termination agent in carbanionic polymerization, affording adamantyl-terminated polymers. Using these structures as macroinitiators for the polymerization of ethylene oxide affords amphiphilic, in-chain adamantyl-functionalized block copolymers. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

GaAs/Ge Solar Powered Aircraft

NASA Technical Reports Server (NTRS)

Colozza, Anthony J.; Scheiman, David A.; Brinker, David J.

1998-01-01

Unmanned Aerial Vehicles (UAV) are being proposed for many applications for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration aircraft. Due to the weight, speed, and altitude constraints imposed on such an aircraft, solar array generated electric power can be a viable alternative to air-breathing engines for certain missions. Development of such an aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) has built a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office.

Black-holes-hedgehogs in the false vacuum and a new physics beyond the Standard Model

NASA Astrophysics Data System (ADS)

Das, C. R.; Laperashvili, L. V.; Sidharth, B. G.; Nielsen, H. B.

2017-12-01

In the present talk, we consider the existence of the two degenerate universal vacua: a) the first Electroweak vacuum at v = 246 GeV - “true vacuum”, and b) the second Planck scale “false vacuum” at v 2 ∼ 1018 GeV. In these vacua, we investigated the different topological defects. The main aim of this paper is an investigation of the hedgehog’s configurations as defects of the false vacuum. In the framework of the f(R) gravity, suggested by authors in their Gravi-Weak Unification model, we obtained a black hole solution, which corresponds to a “hedgehog” - global monopole, “swallowed” by a black-hole with mass ∼ 1019 GeV. These black-holes form a lattice-like structure of the vacuum at the Planck scale. Considering the results of the hedgehog lattice theory in the framework of the SU(2) Yang-Mills gauge-invariant theory with hedgehogs in the Wilson loops, we have used the critical value of temperature for the hedgehog’s confinement phase. This result gave us the possibility to conclude that there exist triplet Higgs fields which can contribute to the SM at the energy scale ≃ 104 ∼ 105 GeV. Showing a new physics at the scale 10÷100 TeV, these triplet Higgs particles can provide the stability of the EW-vacuum of the SM.

Novel Sources of Stripe Rust Resistance Identified by Genome-Wide Association Mapping in Ethiopian Durum Wheat (Triticumturgidumssp. durum)

USDA-ARS?s Scientific Manuscript database

Stripe rust of wheat, caused by Puccinia striiformis f. sp. tritici (Pst), is a global concern for wheat production and has been increasingly destructive in Ethiopia,as well as in the United States and many other countries. As Ethiopia has a long history of stripe rust epidemics, its native wheat ge...

Genotype * environment interaction: a case study for Douglas-fir in western Oregon.

Treesearch

Robert K. Campbell

1992-01-01

Unrecognized genotype x environment interactions (g,e) can bias genetic-gain predictions and models for predicting growth dynamics or species perturbations by global climate change. This study tested six sets of families in 10 plantation sites in a 78-thousand-hectare breeding zone. Plantation differences accounted for 71 percent of sums of squares (15-year heights),...

Measurement of the Generalized Polarizabilities of the Proton in Virtual Compton Scattering at Q2=0.92 and 1.76 GeV2

NASA Astrophysics Data System (ADS)

Laveissière, G.; Todor, L.; Degrande, N.; Jaminion, S.; Jutier, C.; di Salvo, R.; van Hoorebeke, L.; Alexa, L. C.; Anderson, B. D.; Aniol, K. A.; Arundell, K.; Audit, G.; Auerbach, L.; Baker, F. T.; Baylac, M.; Berthot, J.; Bertin, P. Y.; Bertozzi, W.; Bimbot, L.; Boeglin, W. U.; Brash, E. J.; Breton, V.; Breuer, H.; Burtin, E.; Calarco, J. R.; Cardman, L. S.; Cavata, C.; Chang, C.-C.; Chen, J.-P.; Chudakov, E.; Cisbani, E.; Dale, D. S.; de Jager, C. W.; de Leo, R.; Deur, A.; D'Hose, N.; Dodge, G. E.; Domingo, J. J.; Elouadrhiri, L.; Epstein, M. B.; Ewell, L. A.; Finn, J. M.; Fissum, K. G.; Fonvieille, H.; Fournier, G.; Frois, B.; Frullani, S.; Furget, C.; Gao, H.; Gao, J.; Garibaldi, F.; Gasparian, A.; Gilad, S.; Gilman, R.; Glamazdin, A.; Glashausser, C.; Gomez, J.; Gorbenko, V.; Grenier, P.; Guichon, P. A.; Hansen, J. O.; Holmes, R.; Holtrop, M.; Howell, C.; Huber, G. M.; Hyde-Wright, C. E.; Incerti, S.; Iodice, M.; Jardillier, J.; Jones, M. K.; Kahl, W.; Kato, S.; Katramatou, A. T.; Kelly, J. J.; Kerhoas, S.; Ketikyan, A.; Khayat, M.; Kino, K.; Kox, S.; Kramer, L. H.; Kumar, K. S.; Kumbartzki, G.; Kuss, M.; Leone, A.; Lerose, J. J.; Liang, M.; Lindgren, R. A.; Liyanage, N.; Lolos, G. J.; Lourie, R. W.; Madey, R.; Maeda, K.; Malov, S.; Manley, D. M.; Marchand, C.; Marchand, D.; Margaziotis, D. J.; Markowitz, P.; Marroncle, J.; Martino, J.; McCormick, K.; McIntyre, J.; Mehrabyan, S.; Merchez, F.; Meziani, Z. E.; Michaels, R.; Miller, G. W.; Mougey, J. Y.; Nanda, S. K.; Neyret, D.; Offermann, E. A.; Papandreou, Z.; Pasquini, B.; Perdrisat, C. F.; Perrino, R.; Petratos, G. G.; Platchkov, S.; Pomatsalyuk, R.; Prout, D. L.; Punjabi, V. A.; Pussieux, T.; Quémenér, G.; Ransome, R. D.; Ravel, O.; Real, J. S.; Renard, F.; Roblin, Y.; Rowntree, D.; Rutledge, G.; Rutt, P. M.; Saha, A.; Saito, T.; Sarty, A. J.; Serdarevic, A.; Smith, T.; Smirnov, G.; Soldi, K.; Sorokin, P.; Souder, P. A.; Suleiman, R.; Templon, J. A.; Terasawa, T.; Tieulent, R.; Tomasi-Gustaffson, E.; Tsubota, H.; Ueno, H.; Ulmer, P. E.; Urciuoli, G. M.; Vanderhaeghen, M.; van de Vyver, R.; van der Meer, R. L.; Vernin, P.; Vlahovic, B.; Voskanyan, H.; Voutier, E.; Watson, J. W.; Weinstein, L. B.; Wijesooriya, K.; Wilson, R.; Wojtsekhowski, B. B.; Zainea, D. G.; Zhang, W.-M.; Zhao, J.; Zhou, Z.-L.

2004-09-01

We report a virtual Compton scattering study of the proton at low c.m. energies. We have determined the structure functions PLL-PTT/ɛ and PLT, and the electric and magnetic generalized polarizabilities (GPs) αE(Q2) and βM(Q2) at momentum transfer Q2=0.92 and 1.76 GeV2. The electric GP shows a strong falloff with Q2, and its global behavior does not follow a simple dipole form. The magnetic GP shows a rise and then a falloff; this can be interpreted as the dominance of a long-distance diamagnetic pion cloud at low Q2, compensated at higher Q2 by a paramagnetic contribution from πN intermediate states.

Cosmological constraints on pseudo-Nambu-Goldstone bosons

NASA Technical Reports Server (NTRS)

Frieman, Joshua A.; Jaffe, Andrew H.

1991-01-01

Particle physics models with pseudo-Nambu-Goldstone bosons (PNGBs) are characterized by two mass scales: a global spontaneous symmetry breaking scale, f, and a soft (explicit) symmetry breaking scale, Lambda. General model insensitive constraints were studied on this 2-D parameter space arising from the cosmological and astrophysical effects of PNGBs. In particular, constraints were studied arising from vacuum misalignment and thermal production of PNGBs, topological defects, and the cosmological effects of PNGB decay products, as well as astrophysical constraints from stellar PNGB emission. Bounds on the Peccei-Quinn axion scale, 10(exp 10) GeV approx. = or less than f sub pq approx. = or less than 10(exp 10) to 10(exp 12) GeV, emerge as a special case, where the soft breaking scale is fixed at Lambda sub QCD approx. = 100 MeV.

Proton mass decomposition

NASA Astrophysics Data System (ADS)

Yang, Yi-Bo; Chen, Ying; Draper, Terrence; Liang, Jian; Liu, Keh-Fei

2018-03-01

We report the results on the proton mass decomposition and also on the related quark and glue momentum fractions. The results are based on overlap valence fermions on four ensembles of Nf = 2 + 1 DWF configurations with three lattice spacings and volumes, and several pion masses including the physical pion mass. With 1-loop pertur-bative calculation and proper normalization of the glue operator, we find that the u, d, and s quark masses contribute 9(2)% to the proton mass. The quark energy and glue field energy contribute 31(5)% and 37(5)% respectively in the MS scheme at µ = 2 GeV. The trace anomaly gives the remaining 23(1)% contribution. The u, d, s and glue momentum fractions in the MS scheme are consistent with the global analysis at µ = 2 GeV.

Measurement of the cross section and longitudinal double-spin asymmetry for dijet production in polarized p p collisions at s = 200 GeV

DOE PAGES

Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; ...

2017-04-28

We report the first measurement of the longitudinal double-spin asymmetry A LL for mid-rapidity dijet production in polarized pp collisions at a center-of-mass energy ofmore » $$\\sqrt{s}$$ = 200 GeV. The dijet cross section was measured and is shown to be consistent with next-to-leading order (NLO) perturbative QCD predictions. A LL results are presented for two distinct topologies, defined by the jet pseudorapidities, and are compared to predictions from several recent NLO global analyses. Lastly, the measured asymmetries, the first such correlation measurements, support those analyses that find positive gluon polarization at the level of roughly 0.2 over the region of Bjorken-x > 0.05.« less

Optimal Wonderful Life Utility Functions in Multi-Agent Systems

NASA Technical Reports Server (NTRS)

Wolpert, David H.; Tumer, Kagan; Swanson, Keith (Technical Monitor)

2000-01-01

The mathematics of Collective Intelligence (COINs) is concerned with the design of multi-agent systems so as to optimize an overall global utility function when those systems lack centralized communication and control. Typically in COINs each agent runs a distinct Reinforcement Learning (RL) algorithm, so that much of the design problem reduces to how best to initialize/update each agent's private utility function, as far as the ensuing value of the global utility is concerned. Traditional team game solutions to this problem assign to each agent the global utility as its private utility function. In previous work we used the COIN framework to derive the alternative Wonderful Life Utility (WLU), and experimentally established that having the agents use it induces global utility performance up to orders of magnitude superior to that induced by use of the team game utility. The WLU has a free parameter (the clamping parameter) which we simply set to zero in that previous work. Here we derive the optimal value of the clamping parameter, and demonstrate experimentally that using that optimal value can result in significantly improved performance over that of clamping to zero, over and above the improvement beyond traditional approaches.

Enriched uranium imports into the EEC countries in 1972 (in German)

DOE Office of Scientific and Technical Information (OSTI.GOV)

None

1973-11-01

Parts of a survey published by the statistical Office of the European Communities, entitled ''The Supply of the ECC Countries with Enriched Uranium'' are given and briefly commented on. The main daia and figures on the final utilization of the enriched uranium imported by the EEC countries in 1972 are shown in tabular form. (GE)

Structural and energetic properties of acetonitrile-Group IV (A & B) halide complexes.

PubMed

Helminiak, Heather M; Knauf, Robin R; Danforth, Samuel J; Phillips, James A

2014-06-19

We have conducted an extensive computational study of the structural and energetic properties of select acetonitrile-Group IV (A & B) tetrahalide complexes, both CH3CN-MX4 and (CH3CN)2-MX4 (M = Si, Ge, Ti; X = F, Cl). We have also examined the reactivity of CH3CN with SiF4, SiCl4, GeCl4, and TiCl4, and measured low-temperature IR spectra of thin films containing CH3CN with SiF4, GeCl4, or TiCl4. The six 1:1 complexes fall into two general structural classes. CH3CN-TiCl4, CH3CN-TiF4, and CH3CN-GeF4, exhibit relatively short M-N bonds (~2.3 Å), an intermediate degree of distortion in the MX4 subunit, and binding energies ranging from 11.0 to 13.0 kcal/mol. Conversely, CH3CN-GeCl4, CH3CN-SiF4, and CH3CN-SiCl4, are weakly bonded systems, with long M-N distances (>3.0 Å), little distortion in the MX4 subunit, and binding energies ranging from 3.0 to 4.4 kcal/mol. The structural features of analogous 2:1 systems resemble those of their 1:1 counterparts, whereas the binding energies (relative to three isolated fragments) are roughly twice as large. Calculated M-N potential curves in the gas phase and bulk, dielectric media are reported for all 1:1 complexes, and for two systems, CH3CN-GeF4 and CH3CN-SiF4, these data predict significant condensed-phase structural changes. The effect on the CH3CN-SiF4 potential is extreme; the curve becomes quite flat over a broad range in dielectric media, and at higher ε values, the global minimum shifts inward by about 1.0 Å. In bulk reactivity experiments, no reaction was observed between CH3CN and SiF4, SiCl4, or GeCl4, whereas CH3CN and TiCl4 were found to react immediately upon contact. Also, thin-film IR spectra indicate a strong interaction between CH3CN and TiCl4, yet only weak interactions between CH3CN and GeCl4 or SiF4 in the solid state.

Red/near-infrared luminescence tuning of group-14 element complexes of dipyrrins based on a central atom.

PubMed

Yamamura, Masaki; Albrecht, Marcel; Albrecht, Markus; Nishimura, Yoshinobu; Arai, Tatsuo; Nabeshima, Tatsuya

2014-02-03

A dipyrrin complex has been one of the most utilized fluorescent dyes, and a variety of dipyrrin complexes show intriguing functions based on the various coordination structures of the central element. We now report the synthesis, structure, and photophysical properties of germanium and stannane complexes of the N2O2-type tetradentate dipyrrin, L·Ge and L·Sn, which are heavier analogues of the previously reported dipyrrin silicon complex, L·Si. The central group-14 atoms of the monomeric complexes have geometries close to trigonal bipyramidal (TBP), in which the contribution of the square-pyramidal (SP) character becomes higher as the central atom is heavier. Interestingly, L·Sn formed a dimeric structure in the crystal. All complexes L·Si, L·Ge, and L·Sn showed a fluorescence in the red/NIR region. Fluorescence quantum yields of L·Ge and L·Sn are higher than that of L·Si. These results indicated that the central atom on the dipyrrin complexes contributes not only to the geometry difference but also to tuning the fluorescence properties.

Electrical and Structural Analysis on the Formation of n-type Junction in Germanium

NASA Astrophysics Data System (ADS)

Aziz, Umar Abdul; Nadhirah Mohamad Rashid, Nur; Rahmah Aid, Siti; Centeno, Anthony; Ikenoue, Hiroshi; Xie, Fang

2017-05-01

Germanium (Ge) has re-emerged as a potential candidate to replace silicon (Si) as a substrate, due to its higher carrier mobility properties that are the key point for the realization of devices high drive current. However, the fabrication process of Ge is confronted with many problems such as low dopant electrical activation and the utilization of heavy n-type dopant atoms during ion implantation. These problems result in more damage and defects that can affect dopant activation. This paper reports the electrical and structural analysis on the formation of n-type junction in Ge substrate by ion implantation, followed by excimer laser annealing (ELA) using KrF laser. ELA parameters such as laser fluences were varied from 100 - 2000 mJ/cm2 and shot number between 1 - 1000 to obtain the optimized parameter of ELA with a high degree of damage and defect removal. Low resistance with a high degree of crystallinity is obtained for the samples annealed with less than five shot number. Higher shot number with high laser fluence, shows a high degree of ablation damage.

The status and initial results of the MAJORANA DEMONSTRATOR

NASA Astrophysics Data System (ADS)

Zhu, Xiaoyu; MAJORANA Collaboration

2017-01-01

The MAJORANA DEMONSTRATOR is an ultra-low background experiment searching for neutrinoless double-beta decay in 76Ge at the Sanford Underground Research Facility. The search for neutrinoless double-beta decay could determine the Dirac vs Majorana nature of neutrino mass and provide insight to the matter-antimatter asymmetry in the Universe. The DEMONSTRATOR is comprised of 44.8 kg (30 kg enriched in 76Ge) of high purity Ge detectors separated into two modules. Construction and commissioning of both modules completed in Summer 2016 and both modules are now acquiring physics data. In my talk, I will discuss the initial results of the first physics run utilizing both modules focusing primarily on the studies of the background and projections to a ton-scale experiment. This material is based upon work supported by the U.S. Department of Energy, Office of Science, Office of Nuclear Physics, the Particle Astrophysics Program of the National Science Foundation, and the Sanford Underground Research Facility. We acknowledge the support of the U.S. Department of Energy through the LANL/LDRD Program.

ProGeRF: Proteome and Genome Repeat Finder Utilizing a Fast Parallel Hash Function

PubMed Central

Moraes, Walas Jhony Lopes; Rodrigues, Thiago de Souza; Bartholomeu, Daniella Castanheira

2015-01-01

Repetitive element sequences are adjacent, repeating patterns, also called motifs, and can be of different lengths; repetitions can involve their exact or approximate copies. They have been widely used as molecular markers in population biology. Given the sizes of sequenced genomes, various bioinformatics tools have been developed for the extraction of repetitive elements from DNA sequences. However, currently available tools do not provide options for identifying repetitive elements in the genome or proteome, displaying a user-friendly web interface, and performing-exhaustive searches. ProGeRF is a web site for extracting repetitive regions from genome and proteome sequences. It was designed to be efficient, fast, and accurate and primarily user-friendly web tool allowing many ways to view and analyse the results. ProGeRF (Proteome and Genome Repeat Finder) is freely available as a stand-alone program, from which the users can download the source code, and as a web tool. It was developed using the hash table approach to extract perfect and imperfect repetitive regions in a (multi)FASTA file, while allowing a linear time complexity. PMID:25811026

Time-Extended Policies in Mult-Agent Reinforcement Learning

NASA Technical Reports Server (NTRS)

Tumer, Kagan; Agogino, Adrian K.

2004-01-01

Reinforcement learning methods perform well in many domains where a single agent needs to take a sequence of actions to perform a task. These methods use sequences of single-time-step rewards to create a policy that tries to maximize a time-extended utility, which is a (possibly discounted) sum of these rewards. In this paper we build on our previous work showing how these methods can be extended to a multi-agent environment where each agent creates its own policy that works towards maximizing a time-extended global utility over all agents actions. We show improved methods for creating time-extended utilities for the agents that are both "aligned" with the global utility and "learnable." We then show how to crate single-time-step rewards while avoiding the pi fall of having rewards aligned with the global reward leading to utilities not aligned with the global utility. Finally, we apply these reward functions to the multi-agent Gridworld problem. We explicitly quantify a utility's learnability and alignment, and show that reinforcement learning agents using the prescribed reward functions successfully tradeoff learnability and alignment. As a result they outperform both global (e.g., team games ) and local (e.g., "perfectly learnable" ) reinforcement learning solutions by as much as an order of magnitude.

Data Mining Approaches for Genomic Biomarker Development: Applications Using Drug Screening Data from the Cancer Genome Project and the Cancer Cell Line Encyclopedia.

PubMed

Covell, David G

2015-01-01

Developing reliable biomarkers of tumor cell drug sensitivity and resistance can guide hypothesis-driven basic science research and influence pre-therapy clinical decisions. A popular strategy for developing biomarkers uses characterizations of human tumor samples against a range of cancer drug responses that correlate with genomic change; developed largely from the efforts of the Cancer Cell Line Encyclopedia (CCLE) and Sanger Cancer Genome Project (CGP). The purpose of this study is to provide an independent analysis of this data that aims to vet existing and add novel perspectives to biomarker discoveries and applications. Existing and alternative data mining and statistical methods will be used to a) evaluate drug responses of compounds with similar mechanism of action (MOA), b) examine measures of gene expression (GE), copy number (CN) and mutation status (MUT) biomarkers, combined with gene set enrichment analysis (GSEA), for hypothesizing biological processes important for drug response, c) conduct global comparisons of GE, CN and MUT as biomarkers across all drugs screened in the CGP dataset, and d) assess the positive predictive power of CGP-derived GE biomarkers as predictors of drug response in CCLE tumor cells. The perspectives derived from individual and global examinations of GEs, MUTs and CNs confirm existing and reveal unique and shared roles for these biomarkers in tumor cell drug sensitivity and resistance. Applications of CGP-derived genomic biomarkers to predict the drug response of CCLE tumor cells finds a highly significant ROC, with a positive predictive power of 0.78. The results of this study expand the available data mining and analysis methods for genomic biomarker development and provide additional support for using biomarkers to guide hypothesis-driven basic science research and pre-therapy clinical decisions.

Structural and thermochemical Aspects of (III-V)IV3 Material Assembly from First Principles

NASA Astrophysics Data System (ADS)

Chizmeshya, Andrew; Kouvetakis, John

2014-03-01

Alloys with (III-V)-(IV) compositions, including Si3(AlP), Si5-2y(AlP)y, Si3Al(As1-xNx), Si5-2yAl(P1-xNx)y and Ge5-2y(InP)y and have recently been synthesized as mono-crystalline films on Si substrates, using a synthesis route specifically designed to avoid phase separation between the III-V and IV constituents. Molecular ``building blocks'' containing group-V-centered III-V-IV3 cores, formed via interactions of group-III atoms and reactive silyly/germyl hydride precursors of desired composition (e.g, P(SiH3)3 , P(GeH3)3 , etc), assemble to form stable, covalent, diamond-like materials with the inherent tetrahedral symmetry and composition of the III-V-IV3 units. The resulting systems may provide access to a broad range of new semiconductor systems with extended optoelectronic properties, provided that the required molecular sources are available, the thermodynamic processes are viable, and the resulting alloy composition can be tuned to lattice-match the growth substrate. Molecular/solid-state simulations are used to identify promising synthetic pathways and guide the epitaxial creation of new (III-V)-(IV) materials. The thermodynamics of gas phase synthesis reactions, energetic stability of the alloys, and their epitaxial/chemical compatibility with the substrate are combined to form a global figure of merit. The latter corroborates the synthesis of known systems and predicts that formation of GaPSi3/Si(100), GaAsSi3/SiGe(100), AlPGe3/Ge(100) and InAsSi3/Ge(100) may also be favorable. Supported by NSF-DMR under SusChEM award #1309090.

SiGe quantum wells for uncooled long wavelength infra-red radiation (LWIR) sensors

NASA Astrophysics Data System (ADS)

Wissmar, S. G. E.; Radamsson, H. H.; Yamamoto, Y.; Tillack, B.; Vieider, C.; Andersson, J. Y.

2008-03-01

We demonstrate a novel single-crystalline high-performance thermistor material based on SiGe quantum well heterostructures. The SiGe/Si quantum wells are grown epitaxially on standard Si [001] substrates. Holes are used as charge carriers utilizing the discontinuities in the valence band structure. By optimizing design parameters such as the barrier height (by variation of the germanium content) and the fermi level Ef (by variation of the quantum well width and doping level) of the material, the layer structure can be tailored. Then a very high temperature coefficient of resistivity (TCR) can be obtained which is superior to the previous reported conventional thin film materials such as vanadium oxide and amorphous silicon. In addition, the high quality crystalline material promises very low 1/f-noise characteristics promoting an outstanding signal to noise ratio as well as well defined and uniform material properties. High-resolution X-ray diffraction was applied to characterize the thickness and Ge content of QWs. The results show sharp oscillations indicating an almost ideal super lattice with negligible relaxation and low defect density. The impact of growth temperature on the thermistor material properties was characterized by analyzing how the resulting strain primarily affects the performance of the TCR and 1/f noise. Results illustrate a value of 3.3 %/K for TCR with a low 1/f noise.

Formation of atomically ordered and chemically selective Si-O-Ti monolayer on Si0.5Ge0.5(110) for a MIS structure via H2O2(g) functionalization.

PubMed

Park, Sang Wook; Choi, Jong Youn; Siddiqui, Shariq; Sahu, Bhagawan; Galatage, Rohit; Yoshida, Naomi; Kachian, Jessica; Kummel, Andrew C

2017-02-07

Si 0.5 Ge 0.5 (110) surfaces were passivated and functionalized using atomic H, hydrogen peroxide (H 2 O 2 ), and either tetrakis(dimethylamino)titanium (TDMAT) or titanium tetrachloride (TiCl 4 ) and studied in situ with multiple spectroscopic techniques. To passivate the dangling bonds, atomic H and H 2 O 2 (g) were utilized and scanning tunneling spectroscopy (STS) demonstrated unpinning of the surface Fermi level. The H 2 O 2 (g) could also be used to functionalize the surface for metal atomic layer deposition. After subsequent TDMAT or TiCl 4 dosing followed by a post-deposition annealing, scanning tunneling microscopy demonstrated that a thermally stable and well-ordered monolayer of TiO x was deposited on Si 0.5 Ge 0.5 (110), and X-ray photoelectron spectroscopy verified that the interfaces only contained Si-O-Ti bonds and a complete absence of GeO x . STS measurements confirmed a TiO x monolayer without mid-gap and conduction band edge states, which should be an ideal ultrathin insulating layer in a metal-insulator-semiconductor structure. Regardless of the Ti precursors, the final Ti density and electronic structure were identical since the Ti bonding is limited by the high coordination of Ti to O.

Maritime patrol aircraft engine study, General Electric Derivative Engines. Volume II. Appendix A: performance data, Ge27/T3 study A1 turboprop. Final report, October 1978-April 1979

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirschkron, R.; Davis, R.H.; Warren, R.E.

1979-04-30

This study developed data on General Electric common core derivative engines for use in Maritime Patrol Aircraft (MPA) concept formulation studies. The study included the screening of potential General Electric turbofan and turboprop/turboshaft engines and the preparation of technical and planning information on three of the most promising engine candidates. Screening of General Electric derivative candidates was performed utilizing an analytical MPA model using synthesized mission profiles to rank the candidates in terms of fuel consumption, weight, cost and complexity. The three turboprop engines selected for further study were as follows: TF34 growth derivative version with boost and new LPTmore » (TF34/T7 Study A1), F404 derivative with booster stages and new LPT (F404/T1 Study A1), and GE27 scaled and boosted study engine (GE27/T3 Study A1). Volume I summarizes the screening analysis and contains technical, planning, installation, cost and development data for the three selected turboprop engines. Volumes II, III and IV of this report contain the detailed performance data estimates for the GE27/T3 Study A1, TF34/T7 Study A1 and F404/T1 Study A1 turboprop engines, respectively.« less

Measurements of electrons from semi-leptonic heavy flavor decays in p+p and Au+Au collisions at √{sNN } = 200 GeV at STAR

NASA Astrophysics Data System (ADS)

Wang, Yaping; STAR Collaboration

2017-08-01

In these proceedings, we present recent results on electrons from semi-leptonic decays of open heavy-flavor hadrons (eHF) with the STAR detector at the Relativistic Heavy Ion Collider. We report the updated measurements of eHF production in p+p collisions at √{ s } = 200 GeV with significantly improved precision and wider kinematic coverage than previous measurements. With this new p+p reference, we obtain the nuclear modification factor (RAA) for eHF in Au+Au collisions at √{sNN } = 200 GeV using 2010 data. The RAA shows significant suppression at high pT in most central Au+Au collisions, while the suppression reduces gradually towards more peripheral collisions. We compare eHFRAA in central Au+Au collisions to that in central U+U collisions at √{sNN } = 193 GeV and find that they are consistent within uncertainties. We also show the results of B-hadron contribution to eHF extracted from azimuthal correlations between eHF and charged hadrons in p+p collisions. Finally we report the measurements of eHF from open bottom hadron decays and discuss the prospect of measuring eHF from open bottom and charm hadron decays separately utilizing the Heavy Flavor Tracker in Au+Au collisions.

Development of a High-Throughput Gene Expression Screen for Modulators of RAS-MAPK Signaling in a Mutant RAS Cellular Context.

PubMed

Severyn, Bryan; Nguyen, Thi; Altman, Michael D; Li, Lixia; Nagashima, Kumiko; Naumov, George N; Sathyanarayanan, Sriram; Cook, Erica; Morris, Erick; Ferrer, Marc; Arthur, Bill; Benita, Yair; Watters, Jim; Loboda, Andrey; Hermes, Jeff; Gilliland, D Gary; Cleary, Michelle A; Carroll, Pamela M; Strack, Peter; Tudor, Matt; Andersen, Jannik N

2016-10-01

The RAS-MAPK pathway controls many cellular programs, including cell proliferation, differentiation, and apoptosis. In colorectal cancers, recurrent mutations in this pathway often lead to increased cell signaling that may contribute to the development of neoplasms, thereby making this pathway attractive for therapeutic intervention. To this end, we developed a 26-member gene signature of RAS-MAPK pathway activity utilizing the Affymetrix QuantiGene Plex 2.0 reagent system and performed both primary and confirmatory gene expression-based high-throughput screens (GE-HTSs) using KRAS mutant colon cancer cells (SW837) and leveraging a highly annotated chemical library. The screen achieved a hit rate of 1.4% and was able to enrich for hit compounds that target RAS-MAPK pathway members such as MEK and EGFR. Sensitivity and selectivity performance measurements were 0.84 and 1.00, respectively, indicating high true-positive and true-negative rates. Active compounds from the primary screen were confirmed in a dose-response GE-HTS assay, a GE-HTS assay using 14 additional cancer cell lines, and an in vitro colony formation assay. Altogether, our data suggest that this GE-HTS assay will be useful for larger unbiased chemical screens to identify novel compounds and mechanisms that may modulate the RAS-MAPK pathway. © 2016 Society for Laboratory Automation and Screening.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gregory Corman; Krishan Luthra

This report covers work performed under the Continuous Fiber Ceramic Composites (CFCC) program by GE Global Research and its partners from 1994 through 2005. The processing of prepreg-derived, melt infiltrated (MI) composite systems based on monofilament and multifilament tow SiC fibers is described. Extensive mechanical and environmental exposure characterizations were performed on these systems, as well as on competing Ceramic Matrix Composite (CMC) systems. Although current monofilament SiC fibers have inherent oxidative stability limitations due to their carbon surface coatings, the MI CMC system based on multifilament tow (Hi-Nicalon ) proved to have excellent mechanical, thermal and time-dependent properties. Themore » materials database generated from the material testing was used to design turbine hot gas path components, namely the shroud and combustor liner, utilizing the CMC materials. The feasibility of using such MI CMC materials in gas turbine engines was demonstrated via combustion rig testing of turbine shrouds and combustor liners, and through field engine tests of shrouds in a 2MW engine for >1000 hours. A unique combustion test facility was also developed that allowed coupons of the CMC materials to be exposed to high-pressure, high-velocity combustion gas environments for times up to {approx}4000 hours.« less

Evaluating malaria case management at public health facilities in two provinces in Angola.

PubMed

Plucinski, Mateusz M; Ferreira, Manzambi; Ferreira, Carolina Miguel; Burns, Jordan; Gaparayi, Patrick; João, Lubaki; da Costa, Olinda; Gill, Parambir; Samutondo, Claudete; Quivinja, Joltim; Mbounga, Eliane; de León, Gabriel Ponce; Halsey, Eric S; Dimbu, Pedro Rafael; Fortes, Filomeno

2017-05-03

Malaria accounts for the largest portion of healthcare demand in Angola. A pillar of malaria control in Angola is the appropriate management of malaria illness, including testing of suspect cases with rapid diagnostic tests (RDTs) and treatment of confirmed cases with artemisinin-based combination therapy (ACT). Periodic systematic evaluations of malaria case management are recommended to measure health facility readiness and adherence to national case management guidelines. Cross-sectional health facility surveys were performed in low-transmission Huambo and high-transmission Uíge Provinces in early 2016. In each province, 45 health facilities were randomly selected from among all public health facilities stratified by level of care. Survey teams performed inventories of malaria commodities and conducted exit interviews and re-examinations, including RDT testing, of a random selection of all patients completing outpatient consultations. Key health facility readiness and case management indicators were calculated adjusting for the cluster sampling design and utilization. Availability of RDTs or microscopy on the day of the survey was 71% (54-83) in Huambo and 85% (67-94) in Uíge. At least one unit dose pack of one formulation of an ACT (usually artemether-lumefantrine) was available in 83% (66-92) of health facilities in Huambo and 79% (61-90) of health facilities in Uíge. Testing rates of suspect malaria cases in Huambo were 30% (23-38) versus 69% (53-81) in Uíge. Overall, 28% (13-49) of patients with uncomplicated malaria, as determined during the re-examination, were appropriately treated with an ACT with the correct dose in Huambo, compared to 60% (42-75) in Uíge. Incorrect case management of suspect malaria cases was associated with lack of healthcare worker training in Huambo and ACT stock-outs in Uíge. The results reveal important differences between provinces. Despite similar availability of testing and ACT, testing and treatment rates were lower in Huambo compared to Uíge. A majority of true malaria cases seeking care in health facilities in Huambo were not appropriately treated with anti-malarials, highlighting the importance of continued training and supervision of healthcare workers in malaria case management, particularly in areas with decreased malaria transmission.

Phosphorus utilization response of pigs and broiler chickens to diets supplemented with antimicrobials and phytase.

PubMed

McCormick, Katherine; Walk, Carrie L; Wyatt, Craig L; Adeola, Olayiwola

2017-03-01

Three experiments were conducted to evaluate the phosphorus (P) utilization responses of pigs and broiler chickens to dietary supplementation with antimicrobials and phytase and to determine if P digestibility response to phytase is affected by supplementation with antimicrobials. Experiment 1 used 4 diets (a basal negative control formulated to contain 0.41% total P and 0.71% calcium [Ca] without added antimicrobials, basal negative control with added carbadox, basal negative control with added tylosin, or basal negative control with added virginiamycin) and six 18-kg barrows in individual metabolism crates per diet. There was no effect of antimicrobials on P and Ca digestibility or retention. Carbadox supplementation increased ( P  < 0.05) digestibility and retention of gross energy (GE) and supplementation with tylosin increased ( P  < 0.05) N retention relative to the basal negative control diet. Experiment 2 used eight 19-kg barrows in individual metabolism crates per treatment and 9 dietary treatments arranged in a 3 × 3 factorial of antimicrobials (none, tylosin, or virginiamycin) and phytase (0, 500, or 1,500 FTU/kg). Phytase addition to the diets linearly increased ( P  < 0.05) apparent total tract digestibility or retention of P, Ca, nitrogen (N) and GE. Supplementation with antimicrobials did not affect apparent total tract digestibility or retention of P, Ca, N or GE. There were linear effects ( P  < 0.01) of phytase on Ca utilization in diets that were not supplemented with antimicrobials but only tendencies ( P  < 0.10) in diets supplemented with tylosin or virginiamycin. Phytase linearly improved ( P  < 0.05) N utilization in diets supplemented with tylosin or virginiamycin but not in diets without added antimicrobials. Experiment 3 was a broiler chicken experiment with the same experimental design as Exp. 2 but feeding 8 birds per cage and 10 replicate cages per diet. Antimicrobial supplementation improved ( P  < 0.05) feed efficiency and adding tylosin improved ( P  < 0.05) tibia ash but did not affect nutrient utilization. Dietary phytase improved ( P  < 0.01) growth performance, tibia ash and apparent ileal digestibility and retention of P regardless of antimicrobial supplementation. Overall, phytase supplementation improved growth performance and nutrient digestibility and retention, regardless of supplementation of diets with antimicrobials. Supplementation of diets with antimicrobials did not affect P digestibility or retention because of a lack of interaction between antimicrobials and phytase, there was no evidence that P digestibility response to phytase is affected by supplementation with antimicrobials.

Silane and Germane Molecular Electronics.

PubMed

Su, Timothy A; Li, Haixing; Klausen, Rebekka S; Kim, Nathaniel T; Neupane, Madhav; Leighton, James L; Steigerwald, Michael L; Venkataraman, Latha; Nuckolls, Colin

2017-04-18

This Account provides an overview of our recent efforts to uncover the fundamental charge transport properties of Si-Si and Ge-Ge single bonds and introduce useful functions into group 14 molecular wires. We utilize the tools of chemical synthesis and a scanning tunneling microscopy-based break-junction technique to study the mechanism of charge transport in these molecular systems. We evaluated the fundamental ability of silicon, germanium, and carbon molecular wires to transport charge by comparing conductances within families of well-defined structures, the members of which differ only in the number of Si (or Ge or C) atoms in the wire. For each family, this procedure yielded a length-dependent conductance decay parameter, β. Comparison of the different β values demonstrates that Si-Si and Ge-Ge σ bonds are more conductive than the analogous C-C σ bonds. These molecular trends mirror what is seen in the bulk. The conductance decay of Si and Ge-based wires is similar in magnitude to those from π-based molecular wires such as paraphenylenes However, the chemistry of the linkers that attach the molecular wires to the electrodes has a large influence on the resulting β value. For example, Si- and Ge-based wires of many different lengths connected with a methyl-thiomethyl linker give β values of 0.36-0.39 Å -1 , whereas Si- and Ge-based wires connected with aryl-thiomethyl groups give drastically different β values for short and long wires. This observation inspired us to study molecular wires that are composed of both π- and σ-orbitals. The sequence and composition of group 14 atoms in the σ chain modulates the electronic coupling between the π end-groups and dictates the molecular conductance. The conductance behavior originates from the coupling between the subunits, which can be understood by considering periodic trends such as bond length, polarizability, and bond polarity. We found that the same periodic trends determine the electric field-induced breakdown properties of individual Si-Si, Ge-Ge, Si-O, Si-C, and C-C bonds. Building from these studies, we have prepared a system that has two different, alternative conductance pathways. In this wire, we can intentionally break a labile, strained silicon-silicon bond and thereby shunt the current through the secondary conduction pathway. This type of in situ bond-rupture provides a new tool to study single molecule reactions that are induced by electric fields. Moreover, these studies provide guidance for designing dielectric materials as well as molecular devices that require stability under high voltage bias. The fundamental studies on the structure/function relationships of the molecular wires have guided the design of new functional systems based on the Si- and Ge-based wires. For example, we exploited the principle of strain-induced Lewis acidity from reaction chemistry to design a single molecule switch that can be controllably switched between two conductive states by varying the distance between the tip and substrate electrodes. We found that the strain intrinsic to the disilaacenaphthene scaffold also creates two state conductance switching. Finally, we demonstrate the first example of a stereoelectronic conductance switch, and we demonstrate that the switching relies crucially on the electronic delocalization in Si-Si and Ge-Ge wire backbones. These studies illustrate the untapped potential in using Si- and Ge-based wires to design and control charge transport at the nanoscale and to allow quantum mechanics to be used as a tool to design ultraminiaturized switches.

A comparison of simple shear characterization methods for composite laminates

NASA Technical Reports Server (NTRS)

Yeow, Y. T.; Brinson, H. F.

1977-01-01

Various methods for the shear stress-strain characterization of composite laminates are examined, and their advantages and limitations are briefly discussed. Experimental results and the necessary accompanying analysis are then presented and compared for three simple shear characterization procedures. These are the off-axis tensile test method, the + or - 45 degs tensile test method and the 0 deg/90 degs symmetric rail shear test method. It is shown that the first technique indicates that the shear properties of the G/E laminates investigated are fundamentally brittle in nature while the latter two methods tend to indicate that the G/E laminates are fundamentally ductile in nature. Finally, predictions of incrementally determined tensile stress-strain curves utilizing the various different shear behavior methods as input information are presented and discussed.

Elastic Scattering and Total Cross-Section in p+p Reactions --As Measured by the LHC Experiment TOTEM at √{s} = 7 TeV--

NASA Astrophysics Data System (ADS)

Csörgő, T.; Antchev, G.; Aspell, P.; Atanassov, I.; Avati, V.; Baechler, J.; Berardi, V.; Berretti, M.; Bossini, E.; Bozzo, M.; Brogi, P.; Brücken, E.; Buzzo, A.; Cafagna, F. S.; Calicchio, M.; Catanesi, M. G.; Covault, C.; Csanád, M.; Deile, M.; Dimovasili, E.; Doubek, M.; Eggert, K.; Eremin, V.; Ferretti, R.; Ferro, F.; Fiergolski, A.; Garcia, F.; Giani, S.; Greco, V.; Grzanka, L.; Heino, J.; Hilden, T.; Intonti, M. R.; Janda, M.; Kašpar, J.; Kopal, J.; Kundrát, V.; Kurvinen, K.; Lami, S.; Latino, G.; Lauhakangas, R.; Leszko, T.; Lippmaa, E.; Lokajíček, M.; Lo Vetere, M.; Lucas Rodríguez, F.; Macrí, M.; Magaletti, L.; Magazzù, G.; Mercadante, A.; Meucci, M.; Minutoli, S.; Nemes, F.; Niewiadomski, H.; Noschis, E.; Novák, T.; Oliveri, E.; Oljemark, F.; Orava, R.; Oriunno, M.; Österberg, K.; Palazzi, P.; Perrot, A.-L.; Pedreschi, E.; PetäJäjärvi, J.; Procházka, J.; Quinto, M.; Radermacher, E.; Radicioni, E.; Ravotti, F.; Robutti, E.; Ropelewski, L.; Ruggiero, G.; Saarikko, H.; Sanguinetti, G.; Santroni, A.; Scribano, A.; Sette, G.; Snoeys, W.; Spinella, F.; Sziklai, J.; Taylor, C.; Turini, N.; Vacek, V.; Vítek, M.; Welti, J.; Whitmore, J.; Totem Collaboration

Proton-proton elastic scattering has been measured by the TOTEMexperiment at the CERN Large Hadron Collider at √{s} = 7 TeV in special runs with the Roman Pot detectors placed as close to the outgoing beam as seven times the transverse beam size. The differential cross-section measurements are reported in the |t|-range of 0.36 to 2.5 GeV^{2}. Extending the range of data to low t values from 0.02 to 0.33 GeV^2, and utilizing the luminosity measurements of CMS, the total proton-proton cross section at √{s} = 7 TeV is measured to be (98.3 ± 0.2^{stat} ± 2.8^{syst}) mb.

Open Bottom Production in Au+Au Collisions at s NN = 200 GeV with the STAR Experiment

NASA Astrophysics Data System (ADS)

Zhang, Shenghui

In these proceedings, we present measurements of open bottom hadron production through multiple decay channels in Au+Au collisions at s NN = 200 GeV by the STAR experiment. Namely, measurements of nuclear modification factors for electrons, J/ψ, and D0 from open bottom hadron decays are shown. The decay products are topologically identified utilizing the Heavy Flavor Tracker, a silicon vertex detector installed at STAR during the period of 2014 - 2016. It enables precise reconstruction of displaced decay vertices. The results show large suppression for non-prompt J/ψ and non-prompt D0 at high transverse momenta, and indicate less suppression for electrons from bottom hadron decays than for those from charm hadron decays at ˜ 2σ significance level.

Clear distinction between Burkholderia mallei and Burkholderia pseudomallei using fluorescent motB primers.

PubMed

Schmoock, Gernot; Elschner, Mandy; Sprague, Lisa D

2015-03-07

A frame-shift mutation in the flagellum motor gene motB coding for the chemotaxis MotB protein of Burkholderia mallei has been utilized to design a conventional duplex PCR assay with fluorescent labelled primers. Species specificity was tested with a panel of 13 Burkholderia type strains. A total of 41 B. mallei field strains, 36 B. pseudomallei field strains, and 1 B. thailandensis field strain from different geographic regions were tested and correctly identified. Testing of 55 non-Burkholderia bacterial species revealed 100% specificity of the assay. The minimum detection limit was 1 pg DNA or 160 GE for B. mallei and 130 GE for B. pseudomallei, respectively. This assay enables the clear distinction between B. mallei and B. pseudomallei/B. thailandensis.

Optoelectronic properties of candidate photovoltaic Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nhalil, Hariharan; Han, Dan; Du, Mao-Hua

High temperature synthesis and optical band gaps are reported for three candidate photovoltaic earth-abundant Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors. The reported synthesis method is found to be more advantageous for KAg 2SbS 4 compared to the literature reported synthesis utilizing supercritical ammonia as a reaction medium, which produces a mixture of chalcogenide products. Based on optical diffuse reflectance data, Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 have band gaps in the 1.6–1.8 eV range, and are shown to be stable in ambient air for a period of 6 weeks, making themmore » attractive candidates for solar cell applications. Density functional theory (DFT) calculations indicate indirect band gaps for Cu 2PbSiS 4 and KAg 2SbS 4, and a nearly direct band gap for Ag 2PbGeS 4 with the calculated difference between indirect and direct gaps of only 30 meV. The p-type semiconducting behavior of Cu 2PbSiS 4, Ag 2PbGeS 4 is also verified by the transport measurments. The 3D connectivity of the polyanionic networks in these compounds results in dispersive valence and conduction bands, which is especially noticeable for KAg 2SbS 4. This fact is in part attributed to the presence of formally pentavalent SbV in this compound leading to empty Sb 5s orbitals in the conduction band. Finally, we discuss the potential of Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 for photovoltaic applications based on synthesis, stability, band gap and electronic structure considerations.« less

Optoelectronic properties of candidate photovoltaic Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors

DOE PAGES

Nhalil, Hariharan; Han, Dan; Du, Mao-Hua; ...

2018-03-01

High temperature synthesis and optical band gaps are reported for three candidate photovoltaic earth-abundant Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 semiconductors. The reported synthesis method is found to be more advantageous for KAg 2SbS 4 compared to the literature reported synthesis utilizing supercritical ammonia as a reaction medium, which produces a mixture of chalcogenide products. Based on optical diffuse reflectance data, Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 have band gaps in the 1.6–1.8 eV range, and are shown to be stable in ambient air for a period of 6 weeks, making themmore » attractive candidates for solar cell applications. Density functional theory (DFT) calculations indicate indirect band gaps for Cu 2PbSiS 4 and KAg 2SbS 4, and a nearly direct band gap for Ag 2PbGeS 4 with the calculated difference between indirect and direct gaps of only 30 meV. The p-type semiconducting behavior of Cu 2PbSiS 4, Ag 2PbGeS 4 is also verified by the transport measurments. The 3D connectivity of the polyanionic networks in these compounds results in dispersive valence and conduction bands, which is especially noticeable for KAg 2SbS 4. This fact is in part attributed to the presence of formally pentavalent SbV in this compound leading to empty Sb 5s orbitals in the conduction band. Finally, we discuss the potential of Cu 2PbSiS 4, Ag 2PbGeS 4 and KAg 2SbS 4 for photovoltaic applications based on synthesis, stability, band gap and electronic structure considerations.« less

SPS market analysis. [small solar thermal power systems

NASA Technical Reports Server (NTRS)

Goff, H. C.

1980-01-01

A market analysis task included personal interviews by GE personnel and supplemental mail surveys to acquire statistical data and to identify and measure attitudes, reactions and intentions of prospective small solar thermal power systems (SPS) users. Over 500 firms were contacted, including three ownership classes of electric utilities, industrial firms in the top SIC codes for energy consumption, and design engineering firms. A market demand model was developed which utilizes the data base developed by personal interviews and surveys, and projected energy price and consumption data to perform sensitivity analyses and estimate potential markets for SPS.

Disadvantages and Advantages of Sewage Disposal in Connection with Agricultural Utilization (Wady i Zalety Oczyszczania wod Sciekowych w Polaczeniv Zoich Rolnicyzm Wykorzystaniem),

DTIC Science & Technology

1977-09-01

A b—AO ’ le 767 CO4.D REGIONS RESEARCH APt ENSINEERINS LAS HANOVCR N H F/S 13/2DISADVANTAGES AND ADVANTAGES OF SEWAGE DISPOSAL IN COP*IECTI0N W...DISADVANTAGES AND ADVANTAGES OF SEWA GE DISPOSAL IN CONNECTION WITH A GRICULTURAL UTILIZATION J. W i e r z b ick i >- C-) u-iI...significant economic advantages dictates the widest possible appli- cation of land treatment of sewage purification. DO , ~~~~~~~~~ ‘ ,., 1473 COITI ON OF I

Theoretical Study of Si(x)Ge(y)Li(z)- (x=4-10, y=1-10, z=0-10) Clusters for Designing of Novel Nanostructured Materials to be Utilized as Anodes for Lithium-Ion Batteries

DTIC Science & Technology

2015-03-16

AFRL-OSR-VA-TR-2015-0088 Theoretical Study of Novel Nanostructured Materials for Lithium - Ion Batteries Mario Sanchez-Vazquez CENTRO DE INVESTIGACION...of Novel Nanostructured Materials to Be Utilized as Anodes for Lithium - ion Batteries 5a.  CONTRACT NUMBER 5b.  GRANT NUMBER FA9550-13-1-0175 5c...as anodes for Lithium - ion batteries Final Report Nancy Perez-Peralta and Mario Sanchez-Vazquez Abstract In order to find out if silicon

Constraints on spin-dependent parton distributions at large x from global QCD analysis

DOE PAGES

Jimenez-Delgado, P.; Avakian, H.; Melnitchouk, W.

2014-09-28

This study investigate the behavior of spin-dependent parton distribution functions (PDFs) at large parton momentum fractions x in the context of global QCD analysis. We explore the constraints from existing deep-inelastic scattering data, and from theoretical expectations for the leading x → 1 behavior based on hard gluon exchange in perturbative QCD. Systematic uncertainties from the dependence of the PDFs on the choice of parametrization are studied by considering functional forms motivated by orbital angular momentum arguments. Finally, we quantify the reduction in the PDF uncertainties that may be expected from future high-x data from Jefferson Lab at 12 GeV.

Measurement of the generalized polarizabilities of the proton in virtual Compton scattering at Q2=0.92 and 1.76 GeV2.

PubMed

Laveissière, G; Todor, L; Degrande, N; Jaminion, S; Jutier, C; Di Salvo, R; Van Hoorebeke, L; Alexa, L C; Anderson, B D; Aniol, K A; Arundell, K; Audit, G; Auerbach, L; Baker, F T; Baylac, M; Berthot, J; Bertin, P Y; Bertozzi, W; Bimbot, L; Boeglin, W U; Brash, E J; Breton, V; Breuer, H; Burtin, E; Calarco, J R; Cardman, L S; Cavata, C; Chang, C-C; Chen, J-P; Chudakov, E; Cisbani, E; Dale, D S; de Jager, C W; De Leo, R; Deur, A; d'Hose, N; Dodge, G E; Domingo, J J; Elouadrhiri, L; Epstein, M B; Ewell, L A; Finn, J M; Fissum, K G; Fonvieille, H; Fournier, G; Frois, B; Frullani, S; Furget, C; Gao, H; Gao, J; Garibaldi, F; Gasparian, A; Gilad, S; Gilman, R; Glamazdin, A; Glashausser, C; Gomez, J; Gorbenko, V; Grenier, P; Guichon, P A M; Hansen, J O; Holmes, R; Holtrop, M; Howell, C; Huber, G M; Hyde-Wright, C E; Incerti, S; Iodice, M; Jardillier, J; Jones, M K; Kahl, W; Kato, S; Katramatou, A T; Kelly, J J; Kerhoas, S; Ketikyan, A; Khayat, M; Kino, K; Kox, S; Kramer, L H; Kumar, K S; Kumbartzki, G; Kuss, M; Leone, A; LeRose, J J; Liang, M; Lindgren, R A; Liyanage, N; Lolos, G J; Lourie, R W; Madey, R; Maeda, K; Malov, S; Manley, D M; Marchand, C; Marchand, D; Margaziotis, D J; Markowitz, P; Marroncle, J; Martino, J; McCormick, K; McIntyre, J; Mehrabyan, S; Merchez, F; Meziani, Z E; Michaels, R; Miller, G W; Mougey, J Y; Nanda, S K; Neyret, D; Offermann, E A J M; Papandreou, Z; Pasquini, B; Perdrisat, C F; Perrino, R; Petratos, G G; Platchkov, S; Pomatsalyuk, R; Prout, D L; Punjabi, V A; Pussieux, T; Quémenér, G; Ransome, R D; Ravel, O; Real, J S; Renard, F; Roblin, Y; Rowntree, D; Rutledge, G; Rutt, P M; Saha, A; Saito, T; Sarty, A J; Serdarevic, A; Smith, T; Smirnov, G; Soldi, K; Sorokin, P; Souder, P A; Suleiman, R; Templon, J A; Terasawa, T; Tieulent, R; Tomasi-Gustaffson, E; Tsubota, H; Ueno, H; Ulmer, P E; Urciuoli, G M; Vanderhaeghen, M; Van De Vyver, R; Van der Meer, R L J; Vernin, P; Vlahovic, B; Voskanyan, H; Voutier, E; Watson, J W; Weinstein, L B; Wijesooriya, K; Wilson, R; Wojtsekhowski, B B; Zainea, D G; Zhang, W-M; Zhao, J; Zhou, Z-L

2004-09-17

We report a virtual Compton scattering study of the proton at low c.m. energies. We have determined the structure functions P(LL)-P(TT)/epsilon and P(LT), and the electric and magnetic generalized polarizabilities (GPs) alpha(E)(Q2) and beta(M)(Q2) at momentum transfer Q(2)=0.92 and 1.76 GeV2. The electric GP shows a strong falloff with Q2, and its global behavior does not follow a simple dipole form. The magnetic GP shows a rise and then a falloff; this can be interpreted as the dominance of a long-distance diamagnetic pion cloud at low Q2, compensated at higher Q2 by a paramagnetic contribution from piN intermediate states.

Fuel-Flexible Gasification-Combustion Technology for Production of H2 and Sequestration-Ready CO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

George Rizeq; Parag Kulkarni; Wei Wei

It is expected that in the 21st century the Nation will continue to rely on fossil fuels for electricity, transportation, and chemicals. It will be necessary to improve both the process efficiency and environmental impact performance of fossil fuel utilization. GE Global Research is developing an innovative fuel-flexible Unmixed Fuel Processor (UFP) technology to produce H{sub 2}, power, and sequestration-ready CO{sub 2} from coal and other solid fuels. The UFP module offers the potential for reduced cost, increased process efficiency relative to conventional gasification and combustion systems, and near-zero pollutant emissions including NO{sub x}. GE was awarded a contract frommore » U.S. DOE NETL to develop the UFP technology. Work on the Phase I program started in October 2000, and work on the Phase II effort started in April 2005. In the UFP technology, coal and air are simultaneously converted into separate streams of (1) high-purity hydrogen that can be utilized in fuel cells or turbines, (2) sequestration-ready CO{sub 2}, and (3) high temperature/pressure vitiated air to produce electricity in a gas turbine. The process produces near-zero emissions with an estimated efficiency higher than IGCC with conventional CO2 separation. The Phase I R&D program established the feasibility of the integrated UFP technology through lab-, bench- and pilot-scale testing and investigated operating conditions that maximize separation of CO{sub 2} and pollutants from the vent gas, while simultaneously maximizing coal conversion efficiency and hydrogen production. The Phase I effort integrated experimental testing, modeling and preliminary economic studies to demonstrate the UFP technology. The Phase II effort will focus on three high-risk areas: economics, sorbent attrition and lifetime, and product gas quality for turbines. The economic analysis will include estimating the capital cost as well as the costs of hydrogen and electricity for a full-scale UFP plant. These costs will be benchmarked with IGCC polygen costs for plants of similar size. Sorbent attrition and lifetime will be addressed via bench-scale experiments that monitor sorbent performance over time and by assessing materials interactions at operating conditions. The product gas from the third reactor (high-temperature vitiated air) will be evaluated to assess the concentration of particulates, pollutants and other impurities relative to the specifications required for gas turbine feed streams. This is the eighteenth quarterly technical progress report for the UFP program, which is supported by U.S. DOE NETL (Contract No. DE-FC26-00FT40974) and GE. This report summarizes program accomplishments for the Phase II period starting July 01, 2005 and ending September 30, 2005. The report includes an introduction summarizing the UFP technology, main program tasks, and program objectives; it also provides a summary of program activities and accomplishments covering progress in tasks including process modeling, scale-up and economic analysis.« less

Criteria for extending the operation periods of thermoelectric converters based on IV-VI compounds

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sadia, Yatir, E-mail: yatttir@yahoo.com; Ohaion-Raz, Tsion; Ben-Yehuda, Ohad

The recent energy demands affected by the dilution of conventional energy resources and the growing awareness of environmental considerations, had positioned the research of renewable energy conversion methods in general and of thermoelectric direct conversion of thermal into electrical energies in particular, in the forefront of the currently active applicative sciences. IV-VI thermoelectric compounds (e.g. GeTe, PbTe and SnTe) and their alloys comprise some of the most efficient thermoelectric compositions ever reported. Yet a proper utilization of such materials in practical thermoelectric devices, still requires an overcoming the so-called technological “valley of death”, including among others, transport properties' degradation, duemore » to sublimation of volatile Te rich species, while being subjected to elevated temperatures for long periods of time. In an attempt to establish practical operation criteria for extending the operation periods of such thermoelectric converters, it is currently shown based on thermal gravimetric and metallurgical considerations that such harmful sublimation can be practically bridged over by limiting the maximal operating temperatures to the 410–430 °C range for GeTe rich alloys and to 510–530 °C for PbTe and SnTe rich alloys, depending of the thermoelectric leg's diameter. - Graphical abstract: Evaporation rate in the GeTe and PbTe system showing the measured evaporation rates and the maximal operating temperatures for different compositions. In addition, the microstructure after evaporation is shown for PbTe, TAGS-85, and doped Pb{sub 0.13}Ge{sub 087}Te. Display Omitted - Highlights: • Evaporation rates of GeTe and PbTe based thermoelectric compounds were determined. • A criterion for their maximum operating temperature was established. • The materials showed phase separations and off-stoichiometry compositions.« less

Search for resonances in diphoton events at √{s}=13 TeV with the ATLAS detector

NASA Astrophysics Data System (ADS)

Aaboud, M.; Aad, G.; Abbott, B.; Abdallah, J.; Abdinov, O.; Abeloos, B.; Aben, R.; AbouZeid, O. S.; Abraham, N. L.; Abramowicz, H.; Abreu, H.; Abreu, R.; Abulaiti, Y.; Acharya, B. S.; Adamczyk, L.; Adams, D. L.; Adelman, J.; Adomeit, S.; Adye, T.; Affolder, A. A.; Agatonovic-Jovin, T.; Agricola, J.; Aguilar-Saavedra, J. A.; Ahlen, S. P.; Ahmadov, F.; Aielli, G.; Akerstedt, H.; Åkesson, T. P. A.; Akimov, A. V.; Alberghi, G. L.; Albert, J.; Albrand, S.; Alconada Verzini, M. J.; Aleksa, M.; Aleksandrov, I. N.; Alexa, C.; Alexander, G.; Alexopoulos, T.; Alhroob, M.; Ali, B.; Aliev, M.; Alimonti, G.; Alison, J.; Alkire, S. P.; Allbrooke, B. M. M.; Allen, B. W.; Allport, P. P.; Aloisio, A.; Alonso, A.; Alonso, F.; Alpigiani, C.; Alstaty, M.; Alvarez Gonzalez, B.; Álvarez Piqueras, D.; Alviggi, M. G.; Amadio, B. T.; Amako, K.; Amaral Coutinho, Y.; Amelung, C.; Amidei, D.; Amor Dos Santos, S. P.; Amorim, A.; Amoroso, S.; Amundsen, G.; Anastopoulos, C.; Ancu, L. S.; Andari, N.; Andeen, T.; Anders, C. F.; Anders, G.; Anders, J. K.; Anderson, K. J.; Andreazza, A.; Andrei, V.; Angelidakis, S.; Angelozzi, I.; Anger, P.; Angerami, A.; Anghinolfi, F.; Anisenkov, A. V.; Anjos, N.; Annovi, A.; Antel, C.; Antonelli, M.; Antonov, A.; Anulli, F.; Aoki, M.; Aperio Bella, L.; Arabidze, G.; Arai, Y.; Araque, J. P.; Arce, A. T. H.; Arduh, F. A.; Arguin, J.-F.; Argyropoulos, S.; Arik, M.; Armbruster, A. J.; Armitage, L. J.; Arnaez, O.; Arnold, H.; Arratia, M.; Arslan, O.; Artamonov, A.; Artoni, G.; Artz, S.; Asai, S.; Asbah, N.; Ashkenazi, A.; Åsman, B.; Asquith, L.; Assamagan, K.; Astalos, R.; Atkinson, M.; Atlay, N. B.; Augsten, K.; Avolio, G.; Axen, B.; Ayoub, M. K.; Azuelos, G.; Baak, M. A.; Baas, A. E.; Baca, M. J.; Bachacou, H.; Bachas, K.; Backes, M.; Backhaus, M.; Bagiacchi, P.; Bagnaia, P.; Bai, Y.; Baines, J. T.; Baker, O. K.; Baldin, E. M.; Balek, P.; Balestri, T.; Balli, F.; Balunas, W. K.; Banas, E.; Banerjee, Sw.; Bannoura, A. A. E.; Barak, L.; Barberio, E. L.; Barberis, D.; Barbero, M.; Barillari, T.; Barisits, M.-S.; Barklow, T.; Barlow, N.; Barnes, S. L.; Barnett, B. M.; Barnett, R. M.; Barnovska, Z.; Baroncelli, A.; Barone, G.; Barr, A. J.; Barranco Navarro, L.; Barreiro, F.; Barreiro Guimarães da Costa, J.; Bartoldus, R.; Barton, A. E.; Bartos, P.; Basalaev, A.; Bassalat, A.; Bates, R. L.; Batista, S. J.; Batley, J. R.; Battaglia, M.; Bauce, M.; Bauer, F.; Bawa, H. S.; Beacham, J. B.; Beattie, M. D.; Beau, T.; Beauchemin, P. H.; Bechtle, P.; Beck, H. P.; Becker, K.; Becker, M.; Beckingham, M.; Becot, C.; Beddall, A. J.; Beddall, A.; Bednyakov, V. A.; Bedognetti, M.; Bee, C. P.; Beemster, L. J.; Beermann, T. A.; Begel, M.; Behr, J. K.; Belanger-Champagne, C.; Bell, A. S.; Bella, G.; Bellagamba, L.; Bellerive, A.; Bellomo, M.; Belotskiy, K.; Beltramello, O.; Belyaev, N. L.; Benary, O.; Benchekroun, D.; Bender, M.; Bendtz, K.; Benekos, N.; Benhammou, Y.; Benhar Noccioli, E.; Benitez, J.; Benjamin, D. P.; Bensinger, J. R.; Bentvelsen, S.; Beresford, L.; Beretta, M.; Berge, D.; Bergeaas Kuutmann, E.; Berger, N.; Beringer, J.; Berlendis, S.; Bernard, N. R.; Bernius, C.; Bernlochner, F. U.; Berry, T.; Berta, P.; Bertella, C.; Bertoli, G.; Bertolucci, F.; Bertram, I. A.; Bertsche, C.; Bertsche, D.; Besjes, G. J.; Bessidskaia Bylund, O.; Bessner, M.; Besson, N.; Betancourt, C.; Bethani, A.; Bethke, S.; Bevan, A. J.; Bianchi, R. M.; Bianchini, L.; Bianco, M.; Biebel, O.; Biedermann, D.; Bielski, R.; Biesuz, N. V.; Biglietti, M.; Bilbao De Mendizabal, J.; Billoud, T. R. V.; Bilokon, H.; Bindi, M.; Binet, S.; Bingul, A.; Bini, C.; Biondi, S.; Bisanz, T.; Bjergaard, D. M.; Black, C. W.; Black, J. E.; Black, K. M.; Blackburn, D.; Blair, R. E.; Blanchard, J.-B.; Blazek, T.; Bloch, I.; Blocker, C.; Blum, W.; Blumenschein, U.; Blunier, S.; Bobbink, G. J.; Bobrovnikov, V. S.; Bocchetta, S. S.; Bocci, A.; Bock, C.; Boehler, M.; Boerner, D.; Bogaerts, J. A.; Bogavac, D.; Bogdanchikov, A. G.; Bohm, C.; Boisvert, V.; Bokan, P.; Bold, T.; Boldyrev, A. S.; Bomben, M.; Bona, M.; Boonekamp, M.; Borisov, A.; Borissov, G.; Bortfeldt, J.; Bortoletto, D.; Bortolotto, V.; Bos, K.; Boscherini, D.; Bosman, M.; Bossio Sola, J. D.; Boudreau, J.; Bouffard, J.; Bouhova-Thacker, E. V.; Boumediene, D.; Bourdarios, C.; Boutle, S. K.; Boveia, A.; Boyd, J.; Boyko, I. R.; Bracinik, J.; Brandt, A.; Brandt, G.; Brandt, O.; Bratzler, U.; Brau, B.; Brau, J. E.; Braun, H. M.; Breaden Madden, W. D.; Brendlinger, K.; Brennan, A. J.; Brenner, L.; Brenner, R.; Bressler, S.; Bristow, T. M.; Britton, D.; Britzger, D.; Brochu, F. M.; Brock, I.; Brock, R.; Brooijmans, G.; Brooks, T.; Brooks, W. K.; Brosamer, J.; Brost, E.; Broughton, J. H.; Bruckman de Renstrom, P. A.; Bruncko, D.; Bruneliere, R.; Bruni, A.; Bruni, G.; Bruni, L. S.; Brunt, BH; Bruschi, M.; Bruscino, N.; Bryant, P.; Bryngemark, L.; Buanes, T.; Buat, Q.; Buchholz, P.; Buckley, A. G.; Budagov, I. A.; Buehrer, F.; Bugge, M. K.; Bulekov, O.; Bullock, D.; Burckhart, H.; Burdin, S.; Burgard, C. D.; Burghgrave, B.; Burka, K.; Burke, S.; Burmeister, I.; Burr, J. T. P.; Busato, E.; Büscher, D.; Büscher, V.; Bussey, P.; Butler, J. M.; Buttar, C. M.; Butterworth, J. M.; Butti, P.; Buttinger, W.; Buzatu, A.; Buzykaev, A. R.; Cabrera Urbán, S.; Caforio, D.; Cairo, V. M.; Cakir, O.; Calace, N.; Calafiura, P.; Calandri, A.; Calderini, G.; Calfayan, P.; Callea, G.; Caloba, L. P.; Calvente Lopez, S.; Calvet, D.; Calvet, S.; Calvet, T. P.; Camacho Toro, R.; Camarda, S.; Camarri, P.; Cameron, D.; Caminal Armadans, R.; Camincher, C.; Campana, S.; Campanelli, M.; Camplani, A.; Campoverde, A.; Canale, V.; Canepa, A.; Cano Bret, M.; Cantero, J.; Cantrill, R.; Cao, T.; Capeans Garrido, M. D. M.; Caprini, I.; Caprini, M.; Capua, M.; Caputo, R.; Carbone, R. M.; Cardarelli, R.; Cardillo, F.; Carli, I.; Carli, T.; Carlino, G.; Carminati, L.; Caron, S.; Carquin, E.; Carrillo-Montoya, G. D.; Carter, J. R.; Carvalho, J.; Casadei, D.; Casado, M. P.; Casolino, M.; Casper, D. W.; Castaneda-Miranda, E.; Castelijn, R.; Castelli, A.; Castillo Gimenez, V.; Castro, N. F.; Catinaccio, A.; Catmore, J. R.; Cattai, A.; Caudron, J.; Cavaliere, V.; Cavallaro, E.; Cavalli, D.; Cavalli-Sforza, M.; Cavasinni, V.; Ceradini, F.; Cerda Alberich, L.; Cerio, B. C.; Cerqueira, A. S.; Cerri, A.; Cerrito, L.; Cerutti, F.; Cerv, M.; Cervelli, A.; Cetin, S. A.; Chafaq, A.; Chakraborty, D.; Chan, S. K.; Chan, Y. L.; Chang, P.; Chapman, J. D.; Charlton, D. G.; Chatterjee, A.; Chau, C. C.; Chavez Barajas, C. A.; Che, S.; Cheatham, S.; Chegwidden, A.; Chekanov, S.; Chekulaev, S. V.; Chelkov, G. A.; Chelstowska, M. A.; Chen, C.; Chen, H.; Chen, K.; Chen, S.; Chen, S.; Chen, X.; Chen, Y.; Cheng, H. C.; Cheng, H. J.; Cheng, Y.; Cheplakov, A.; Cheremushkina, E.; Cherkaoui El Moursli, R.; Chernyatin, V.; Cheu, E.; Chevalier, L.; Chiarella, V.; Chiarelli, G.; Chiodini, G.; Chisholm, A. S.; Chitan, A.; Chizhov, M. V.; Choi, K.; Chomont, A. R.; Chouridou, S.; Chow, B. K. B.; Christodoulou, V.; Chromek-Burckhart, D.; Chudoba, J.; Chuinard, A. J.; Chwastowski, J. J.; Chytka, L.; Ciapetti, G.; Ciftci, A. K.; Cinca, D.; Cindro, V.; Cioara, I. A.; Ciocca, C.; Ciocio, A.; Cirotto, F.; Citron, Z. H.; Citterio, M.; Ciubancan, M.; Clark, A.; Clark, B. L.; Clark, M. R.; Clark, P. J.; Clarke, R. N.; Clement, C.; Coadou, Y.; Cobal, M.; Coccaro, A.; Cochran, J.; Colasurdo, L.; Cole, B.; Colijn, A. P.; Collot, J.; Colombo, T.; Compostella, G.; Conde Muiño, P.; Coniavitis, E.; Connell, S. H.; Connelly, I. A.; Consorti, V.; Constantinescu, S.; Conti, G.; Conventi, F.; Cooke, M.; Cooper, B. D.; Cooper-Sarkar, A. M.; Cormier, K. J. R.; Cornelissen, T.; Corradi, M.; Corriveau, F.; Corso-Radu, A.; Cortes-Gonzalez, A.; Cortiana, G.; Costa, G.; Costa, M. J.; Costanzo, D.; Cottin, G.; Cowan, G.; Cox, B. E.; Cranmer, K.; Crawley, S. J.; Cree, G.; Crépé-Renaudin, S.; Crescioli, F.; Cribbs, W. A.; Crispin Ortuzar, M.; Cristinziani, M.; Croft, V.; Crosetti, G.; Cueto, A.; Cuhadar Donszelmann, T.; Cummings, J.; Curatolo, M.; Cúth, J.; Czirr, H.; Czodrowski, P.; D'amen, G.; D'Auria, S.; D'Onofrio, M.; Da Cunha Sargedas De Sousa, M. J.; Da Via, C.; Dabrowski, W.; Dado, T.; Dai, T.; Dale, O.; Dallaire, F.; Dallapiccola, C.; Dam, M.; Dandoy, J. R.; Dang, N. P.; Daniells, A. C.; Dann, N. S.; Danninger, M.; Dano Hoffmann, M.; Dao, V.; Darbo, G.; Darmora, S.; Dassoulas, J.; Dattagupta, A.; Davey, W.; David, C.; Davidek, T.; Davies, M.; Davison, P.; Dawe, E.; Dawson, I.; Daya-Ishmukhametova, R. K.; De, K.; de Asmundis, R.; De Benedetti, A.; De Castro, S.; De Cecco, S.; De Groot, N.; de Jong, P.; De la Torre, H.; De Lorenzi, F.; De Maria, A.; De Pedis, D.; De Salvo, A.; De Sanctis, U.; De Santo, A.; De Vivie De Regie, J. B.; Dearnaley, W. J.; Debbe, R.; Debenedetti, C.; Dedovich, D. V.; Dehghanian, N.; Deigaard, I.; Del Gaudio, M.; Del Peso, J.; Del Prete, T.; Delgove, D.; Deliot, F.; Delitzsch, C. M.; Deliyergiyev, M.; Dell'Acqua, A.; Dell'Asta, L.; Dell'Orso, M.; Della Pietra, M.; della Volpe, D.; Delmastro, M.; Delsart, P. A.; DeMarco, D. A.; Demers, S.; Demichev, M.; Demilly, A.; Denisov, S. P.; Denysiuk, D.; Derendarz, D.; Derkaoui, J. E.; Derue, F.; Dervan, P.; Desch, K.; Deterre, C.; Dette, K.; Deviveiros, P. O.; Dewhurst, A.; Dhaliwal, S.; Di Ciaccio, A.; Di Ciaccio, L.; Di Clemente, W. K.; Di Donato, C.; Di Girolamo, A.; Di Girolamo, B.; Di Micco, B.; Di Nardo, R.; Di Simone, A.; Di Sipio, R.; Di Valentino, D.; Diaconu, C.; Diamond, M.; Dias, F. A.; Diaz, M. A.; Diehl, E. B.; Dietrich, J.; Diglio, S.; Dimitrievska, A.; Dingfelder, J.; Dita, P.; Dita, S.; Dittus, F.; Djama, F.; Djobava, T.; Djuvsland, J. I.; do Vale, M. A. B.; Dobos, D.; Dobre, M.; Doglioni, C.; Dolejsi, J.; Dolezal, Z.; Donadelli, M.; Donati, S.; Dondero, P.; Donini, J.; Dopke, J.; Doria, A.; Dova, M. T.; Doyle, A. T.; Drechsler, E.; Dris, M.; Du, Y.; Duarte-Campderros, J.; Duchovni, E.; Duckeck, G.; Ducu, O. A.; Duda, D.; Dudarev, A.; Dudder, A. Chr.; Duffield, E. M.; Duflot, L.; Dührssen, M.; Dumancic, M.; Dunford, M.; Duran Yildiz, H.; Düren, M.; Durglishvili, A.; Duschinger, D.; Dutta, B.; Dyndal, M.; Eckardt, C.; Ecker, K. M.; Edgar, R. C.; Edwards, N. C.; Eifert, T.; Eigen, G.; Einsweiler, K.; Ekelof, T.; El Kacimi, M.; Ellajosyula, V.; Ellert, M.; Elles, S.; Ellinghaus, F.; Elliot, A. A.; Ellis, N.; Elmsheuser, J.; Elsing, M.; Emeliyanov, D.; Enari, Y.; Endner, O. C.; Ennis, J. S.; Erdmann, J.; Ereditato, A.; Ernis, G.; Ernst, J.; Ernst, M.; Errede, S.; Ertel, E.; Escalier, M.; Esch, H.; Escobar, C.; Esposito, B.; Etienvre, A. I.; Etzion, E.; Evans, H.; Ezhilov, A.; Fabbri, F.; Fabbri, L.; Facini, G.; Fakhrutdinov, R. M.; Falciano, S.; Falla, R. J.; Faltova, J.; Fang, Y.; Fanti, M.; Farbin, A.; Farilla, A.; Farina, C.; Farina, E. M.; Farooque, T.; Farrell, S.; Farrington, S. M.; Farthouat, P.; Fassi, F.; Fassnacht, P.; Fassouliotis, D.; Faucci Giannelli, M.; Favareto, A.; Fawcett, W. J.; Fayard, L.; Fedin, O. L.; Fedorko, W.; Feigl, S.; Feligioni, L.; Feng, C.; Feng, E. J.; Feng, H.; Fenyuk, A. B.; Feremenga, L.; Fernandez Martinez, P.; Fernandez Perez, S.; Ferrando, J.; Ferrari, A.; Ferrari, P.; Ferrari, R.; Ferreira de Lima, D. E.; Ferrer, A.; Ferrere, D.; Ferretti, C.; Ferretto Parodi, A.; Fiedler, F.; Filipčič, A.; Filipuzzi, M.; Filthaut, F.; Fincke-Keeler, M.; Finelli, K. D.; Fiolhais, M. C. N.; Fiorini, L.; Firan, A.; Fischer, A.; Fischer, C.; Fischer, J.; Fisher, W. C.; Flaschel, N.; Fleck, I.; Fleischmann, P.; Fletcher, G. T.; Fletcher, R. R. M.; Flick, T.; Floderus, A.; Flores Castillo, L. R.; Flowerdew, M. J.; Forcolin, G. T.; Formica, A.; Forti, A.; Foster, A. G.; Fournier, D.; Fox, H.; Fracchia, S.; Francavilla, P.; Franchini, M.; Francis, D.; Franconi, L.; Franklin, M.; Frate, M.; Fraternali, M.; Freeborn, D.; Fressard-Batraneanu, S. M.; Friedrich, F.; Froidevaux, D.; Frost, J. A.; Fukunaga, C.; Fullana Torregrosa, E.; Fusayasu, T.; Fuster, J.; Gabaldon, C.; Gabizon, O.; Gabrielli, A.; Gabrielli, A.; Gach, G. P.; Gadatsch, S.; Gadomski, S.; Gagliardi, G.; Gagnon, L. G.; Gagnon, P.; Galea, C.; Galhardo, B.; Gallas, E. J.; Gallop, B. J.; Gallus, P.; Galster, G.; Gan, K. K.; Gao, J.; Gao, Y.; Gao, Y. S.; Garay Walls, F. M.; García, C.; García Navarro, J. E.; Garcia-Sciveres, M.; Gardner, R. W.; Garelli, N.; Garonne, V.; Gascon Bravo, A.; Gasnikova, K.; Gatti, C.; Gaudiello, A.; Gaudio, G.; Gauthier, L.; Gavrilenko, I. L.; Gay, C.; Gaycken, G.; Gazis, E. N.; Gecse, Z.; Gee, C. N. P.; Geich-Gimbel, Ch.; Geisen, M.; Geisler, M. P.; Gemme, C.; Genest, M. H.; Geng, C.; Gentile, S.; Gentsos, C.; George, S.; Gerbaudo, D.; Gershon, A.; Ghasemi, S.; Ghazlane, H.; Ghneimat, M.; Giacobbe, B.; Giagu, S.; Giannetti, P.; Gibbard, B.; Gibson, S. M.; Gignac, M.; Gilchriese, M.; Gillam, T. P. S.; Gillberg, D.; Gilles, G.; Gingrich, D. M.; Giokaris, N.; Giordani, M. P.; Giorgi, F. M.; Giorgi, F. M.; Giraud, P. F.; Giromini, P.; Giugni, D.; Giuli, F.; Giuliani, C.; Giulini, M.; Gjelsten, B. K.; Gkaitatzis, S.; Gkialas, I.; Gkougkousis, E. L.; Gladilin, L. K.; Glasman, C.; Glatzer, J.; Glaysher, P. C. F.; Glazov, A.; Goblirsch-Kolb, M.; Godlewski, J.; Goldfarb, S.; Golling, T.; Golubkov, D.; Gomes, A.; Gonçalo, R.; Goncalves Pinto Firmino Da Costa, J.; Gonella, G.; Gonella, L.; Gongadze, A.; González de la Hoz, S.; Gonzalez Parra, G.; Gonzalez-Sevilla, S.; Goossens, L.; Gorbounov, P. A.; Gordon, H. A.; Gorelov, I.; Gorini, B.; Gorini, E.; Gorišek, A.; Gornicki, E.; Goshaw, A. T.; Gössling, C.; Gostkin, M. I.; Goudet, C. R.; Goujdami, D.; Goussiou, A. G.; Govender, N.; Gozani, E.; Graber, L.; Grabowska-Bold, I.; Gradin, P. O. J.; Grafström, P.; Gramling, J.; Gramstad, E.; Grancagnolo, S.; Gratchev, V.; Gravila, P. M.; Gray, H. M.; Graziani, E.; Greenwood, Z. D.; Grefe, C.; Gregersen, K.; Gregor, I. M.; Grenier, P.; Grevtsov, K.; Griffiths, J.; Grillo, A. A.; Grimm, K.; Grinstein, S.; Gris, Ph.; Grivaz, J.-F.; Groh, S.; Grohs, J. P.; Gross, E.; Grosse-Knetter, J.; Grossi, G. C.; Grout, Z. J.; Guan, L.; Guan, W.; Guenther, J.; Guescini, F.; Guest, D.; Gueta, O.; Guido, E.; Guillemin, T.; Guindon, S.; Gul, U.; Gumpert, C.; Guo, J.; Guo, Y.; Gupta, R.; Gupta, S.; Gustavino, G.; Gutierrez, P.; Gutierrez Ortiz, N. G.; Gutschow, C.; Guyot, C.; Gwenlan, C.; Gwilliam, C. B.; Haas, A.; Haber, C.; Hadavand, H. K.; Haddad, N.; Hadef, A.; Hageböck, S.; Hajduk, Z.; Hakobyan, H.; Haleem, M.; Haley, J.; Halladjian, G.; Hallewell, G. D.; Hamacher, K.; Hamal, P.; Hamano, K.; Hamilton, A.; Hamity, G. N.; Hamnett, P. G.; Han, L.; Hanagaki, K.; Hanawa, K.; Hance, M.; Haney, B.; Hanisch, S.; Hanke, P.; Hanna, R.; Hansen, J. B.; Hansen, J. D.; Hansen, M. C.; Hansen, P. H.; Hara, K.; Hard, A. S.; Harenberg, T.; Hariri, F.; Harkusha, S.; Harrington, R. D.; Harrison, P. F.; Hartjes, F.; Hartmann, N. M.; Hasegawa, M.; Hasegawa, Y.; Hasib, A.; Hassani, S.; Haug, S.; Hauser, R.; Hauswald, L.; Havranek, M.; Hawkes, C. M.; Hawkings, R. J.; Hayakawa, D.; Hayden, D.; Hays, C. P.; Hays, J. M.; Hayward, H. S.; Haywood, S. J.; Head, S. J.; Heck, T.; Hedberg, V.; Heelan, L.; Heim, S.; Heim, T.; Heinemann, B.; Heinrich, J. J.; Heinrich, L.; Heinz, C.; Hejbal, J.; Helary, L.; Hellman, S.; Helsens, C.; Henderson, J.; Henderson, R. C. W.; Heng, Y.; Henkelmann, S.; Henriques Correia, A. M.; Henrot-Versille, S.; Herbert, G. H.; Herget, V.; Hernández Jiménez, Y.; Herten, G.; Hertenberger, R.; Hervas, L.; Hesketh, G. G.; Hessey, N. P.; Hetherly, J. W.; Hickling, R.; Higón-Rodriguez, E.; Hill, E.; Hill, J. C.; Hiller, K. H.; Hillier, S. J.; Hinchliffe, I.; Hines, E.; Hinman, R. R.; Hirose, M.; Hirschbuehl, D.; Hobbs, J.; Hod, N.; Hodgkinson, M. C.; Hodgson, P.; Hoecker, A.; Hoeferkamp, M. R.; Hoenig, F.; Hohn, D.; Holmes, T. R.; Homann, M.; Hong, T. M.; Hooberman, B. H.; Hopkins, W. H.; Horii, Y.; Horton, A. J.; Hostachy, J.-Y.; Hou, S.; Hoummada, A.; Howarth, J.; Hrabovsky, M.; Hristova, I.; Hrivnac, J.; Hryn'ova, T.; Hrynevich, A.; Hsu, C.; Hsu, P. J.; Hsu, S.-C.; Hu, D.; Hu, Q.; Hu, S.; Huang, Y.; Hubacek, Z.; Hubaut, F.; Huegging, F.; Huffman, T. B.; Hughes, E. W.; Hughes, G.; Huhtinen, M.; Huo, P.; Huseynov, N.; Huston, J.; Huth, J.; Iacobucci, G.; Iakovidis, G.; Ibragimov, I.; Iconomidou-Fayard, L.; Ideal, E.; Idrissi, Z.; Iengo, P.; Igonkina, O.; Iizawa, T.; Ikegami, Y.; Ikeno, M.; Ilchenko, Y.; Iliadis, D.; Ilic, N.; Ince, T.; Introzzi, G.; Ioannou, P.; Iodice, M.; Iordanidou, K.; Ippolito, V.; Ishijima, N.; Ishino, M.; Ishitsuka, M.; Ishmukhametov, R.; Issever, C.; Istin, S.; Ito, F.; Iturbe Ponce, J. M.; Iuppa, R.; Iwanski, W.; Iwasaki, H.; Izen, J. M.; Izzo, V.; Jabbar, S.; Jackson, B.; Jackson, P.; Jain, V.; Jakobi, K. B.; Jakobs, K.; Jakobsen, S.; Jakoubek, T.; Jamin, D. O.; Jana, D. K.; Jansen, E.; Jansky, R.; Janssen, J.; Janus, M.; Jarlskog, G.; Javadov, N.; Javůrek, T.; Jeanneau, F.; Jeanty, L.; Jejelava, J.; Jeng, G.-Y.; Jennens, D.; Jenni, P.; Jeske, C.; Jézéquel, S.; Ji, H.; Jia, J.; Jiang, H.; Jiang, Y.; Jiggins, S.; Jimenez Pena, J.; Jin, S.; Jinaru, A.; Jinnouchi, O.; Johansson, P.; Johns, K. A.; Johnson, W. J.; Jon-And, K.; Jones, G.; Jones, R. W. L.; Jones, S.; Jones, T. J.; Jongmanns, J.; Jorge, P. M.; Jovicevic, J.; Ju, X.; Juste Rozas, A.; Köhler, M. K.; Kaczmarska, A.; Kado, M.; Kagan, H.; Kagan, M.; Kahn, S. J.; Kaji, T.; Kajomovitz, E.; Kalderon, C. W.; Kaluza, A.; Kama, S.; Kamenshchikov, A.; Kanaya, N.; Kaneti, S.; Kanjir, L.; Kantserov, V. A.; Kanzaki, J.; Kaplan, B.; Kaplan, L. S.; Kapliy, A.; Kar, D.; Karakostas, K.; Karamaoun, A.; Karastathis, N.; Kareem, M. J.; Karentzos, E.; Karnevskiy, M.; Karpov, S. N.; Karpova, Z. M.; Karthik, K.; Kartvelishvili, V.; Karyukhin, A. N.; Kasahara, K.; Kashif, L.; Kass, R. D.; Kastanas, A.; Kataoka, Y.; Kato, C.; Katre, A.; Katzy, J.; Kawagoe, K.; Kawamoto, T.; Kawamura, G.; Kazanin, V. F.; Keeler, R.; Kehoe, R.; Keller, J. S.; Kempster, J. J.; Kentaro, K.; Keoshkerian, H.; Kepka, O.; Kerševan, B. P.; Kersten, S.; Keyes, R. A.; Khader, M.; Khalil-zada, F.; Khanov, A.; Kharlamov, A. G.; Khoo, T. 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M.; Shcherbakova, A.; Shehu, C. Y.; Sherwood, P.; Shi, L.; Shimizu, S.; Shimmin, C. O.; Shimojima, M.; Shiyakova, M.; Shmeleva, A.; Shoaleh Saadi, D.; Shochet, M. J.; Shojaii, S.; Shrestha, S.; Shulga, E.; Shupe, M. A.; Sicho, P.; Sickles, A. M.; Sidebo, P. E.; Sidiropoulou, O.; Sidorov, D.; Sidoti, A.; Siegert, F.; Sijacki, Dj.; Silva, J.; Silverstein, S. B.; Simak, V.; Simic, Lj.; Simion, S.; Simioni, E.; Simmons, B.; Simon, D.; Simon, M.; Sinervo, P.; Sinev, N. B.; Sioli, M.; Siragusa, G.; Sivoklokov, S. Yu.; Sjölin, J.; Skinner, M. B.; Skottowe, H. P.; Skubic, P.; Slater, M.; Slavicek, T.; Slawinska, M.; Sliwa, K.; Slovak, R.; Smakhtin, V.; Smart, B. H.; Smestad, L.; Smiesko, J.; Smirnov, S. Yu.; Smirnov, Y.; Smirnova, L. N.; Smirnova, O.; Smith, M. N. K.; Smith, R. W.; Smizanska, M.; Smolek, K.; Snesarev, A. A.; Snyder, S.; Sobie, R.; Socher, F.; Soffer, A.; Soh, D. A.; Sokhrannyi, G.; Solans Sanchez, C. A.; Solar, M.; Soldatov, E. Yu.; Soldevila, U.; Solodkov, A. A.; Soloshenko, A.; Solovyanov, O. V.; Solovyev, V.; Sommer, P.; Son, H.; Song, H. Y.; Sood, A.; Sopczak, A.; Sopko, V.; Sorin, V.; Sosa, D.; Sotiropoulou, C. L.; Soualah, R.; Soukharev, A. M.; South, D.; Sowden, B. C.; Spagnolo, S.; Spalla, M.; Spangenberg, M.; Spanò, F.; Sperlich, D.; Spettel, F.; Spighi, R.; Spigo, G.; Spiller, L. A.; Spousta, M.; St. Denis, R. D.; Stabile, A.; Stamen, R.; Stamm, S.; Stanecka, E.; Stanek, R. W.; Stanescu, C.; Stanescu-Bellu, M.; Stanitzki, M. M.; Stapnes, S.; Starchenko, E. A.; Stark, G. H.; Stark, J.; Staroba, P.; Starovoitov, P.; Stärz, S.; Staszewski, R.; Steinberg, P.; Stelzer, B.; Stelzer, H. J.; Stelzer-Chilton, O.; Stenzel, H.; Stewart, G. A.; Stillings, J. A.; Stockton, M. C.; Stoebe, M.; Stoicea, G.; Stolte, P.; Stonjek, S.; Stradling, A. R.; Straessner, A.; Stramaglia, M. E.; Strandberg, J.; Strandberg, S.; Strandlie, A.; Strauss, M.; Strizenec, P.; Ströhmer, R.; Strom, D. M.; Stroynowski, R.; Strubig, A.; Stucci, S. A.; Stugu, B.; Styles, N. A.; Su, D.; Su, J.; Suchek, S.; Sugaya, Y.; Suk, M.; Sulin, V. V.; Sultansoy, S.; Sumida, T.; Sun, S.; Sun, X.; Sundermann, J. E.; Suruliz, K.; Susinno, G.; Sutton, M. R.; Suzuki, S.; Svatos, M.; Swiatlowski, M.; Sykora, I.; Sykora, T.; Ta, D.; Taccini, C.; Tackmann, K.; Taenzer, J.; Taffard, A.; Tafirout, R.; Taiblum, N.; Takai, H.; Takashima, R.; Takeshita, T.; Takubo, Y.; Talby, M.; Talyshev, A. A.; Tan, K. G.; Tanaka, J.; Tanaka, M.; Tanaka, R.; Tanaka, S.; Tannenwald, B. B.; Tapia Araya, S.; Tapprogge, S.; Tarem, S.; Tartarelli, G. F.; Tas, P.; Tasevsky, M.; Tashiro, T.; Tassi, E.; Tavares Delgado, A.; Tayalati, Y.; Taylor, A. C.; Taylor, G. N.; Taylor, P. T. E.; Taylor, W.; Teischinger, F. A.; Teixeira-Dias, P.; Temming, K. K.; Temple, D.; Ten Kate, H.; Teng, P. K.; Teoh, J. J.; Tepel, F.; Terada, S.; Terashi, K.; Terron, J.; Terzo, S.; Testa, M.; Teuscher, R. J.; Theveneaux-Pelzer, T.; Thomas, J. P.; Thomas-Wilsker, J.; Thompson, E. N.; Thompson, P. D.; Thompson, A. S.; Thomsen, L. A.; Thomson, E.; Thomson, M.; Tibbetts, M. J.; Ticse Torres, R. E.; Tikhomirov, V. O.; Tikhonov, Yu. A.; Timoshenko, S.; Tipton, P.; Tisserant, S.; Todome, K.; Todorov, T.; Todorova-Nova, S.; Tojo, J.; Tokár, S.; Tokushuku, K.; Tolley, E.; Tomlinson, L.; Tomoto, M.; Tompkins, L.; Toms, K.; Tong, B.; Torrence, E.; Torres, H.; Torró Pastor, E.; Toth, J.; Touchard, F.; Tovey, D. R.; Trefzger, T.; Tricoli, A.; Trigger, I. M.; Trincaz-Duvoid, S.; Tripiana, M. F.; Trischuk, W.; Trocmé, B.; Trofymov, A.; Troncon, C.; Trottier-McDonald, M.; Trovatelli, M.; Truong, L.; Trzebinski, M.; Trzupek, A.; Tseng, J. C.-L.; Tsiareshka, P. V.; Tsipolitis, G.; Tsirintanis, N.; Tsiskaridze, S.; Tsiskaridze, V.; Tskhadadze, E. G.; Tsui, K. M.; Tsukerman, I. I.; Tsulaia, V.; Tsuno, S.; Tsybychev, D.; Tu, Y.; Tudorache, A.; Tudorache, V.; Tuna, A. N.; Tupputi, S. A.; Turchikhin, S.; Turecek, D.; Turgeman, D.; Turra, R.; Turvey, A. J.; Tuts, P. M.; Tyndel, M.; Ucchielli, G.; Ueda, I.; Ughetto, M.; Ukegawa, F.; Unal, G.; Undrus, A.; Unel, G.; Ungaro, F. C.; Unno, Y.; Unverdorben, C.; Urban, J.; Urquijo, P.; Urrejola, P.; Usai, G.; Usanova, A.; Vacavant, L.; Vacek, V.; Vachon, B.; Valderanis, C.; Valdes Santurio, E.; Valencic, N.; Valentinetti, S.; Valero, A.; Valery, L.; Valkar, S.; Vallier, A.; Valls Ferrer, J. A.; Van Den Wollenberg, W.; Van Der Deijl, P. C.; van der Graaf, H.; van Eldik, N.; van Gemmeren, P.; Van Nieuwkoop, J.; van Vulpen, I.; van Woerden, M. C.; Vanadia, M.; Vandelli, W.; Vanguri, R.; Vaniachine, A.; Vankov, P.; Vardanyan, G.; Vari, R.; Varnes, E. W.; Varol, T.; Varouchas, D.; Vartapetian, A.; Varvell, K. E.; Vasquez, J. G.; Vazeille, F.; Vazquez Schroeder, T.; Veatch, J.; Veeraraghavan, V.; Veloce, L. M.; Veloso, F.; Veneziano, S.; Ventura, A.; Venturi, M.; Venturi, N.; Venturini, A.; Vercesi, V.; Verducci, M.; Verkerke, W.; Vermeulen, J. C.; Vest, A.; Vetterli, M. C.; Viazlo, O.; Vichou, I.; Vickey, T.; Vickey Boeriu, O. E.; Viehhauser, G. H. A.; Viel, S.; Vigani, L.; Villa, M.; Villaplana Perez, M.; Vilucchi, E.; Vincter, M. G.; Vinogradov, V. B.; Vittori, C.; Vivarelli, I.; Vlachos, S.; Vlasak, M.; Vogel, M.; Vokac, P.; Volpi, G.; Volpi, M.; von der Schmitt, H.; von Toerne, E.; Vorobel, V.; Vorobev, K.; Vos, M.; Voss, R.; Vossebeld, J. H.; Vranjes, N.; Vranjes Milosavljevic, M.; Vrba, V.; Vreeswijk, M.; Vuillermet, R.; Vukotic, I.; Vykydal, Z.; Wagner, P.; Wagner, W.; Wahlberg, H.; Wahrmund, S.; Wakabayashi, J.; Walder, J.; Walker, R.; Walkowiak, W.; Wallangen, V.; Wang, C.; Wang, C.; Wang, F.; Wang, H.; Wang, H.; Wang, J.; Wang, J.; Wang, K.; Wang, R.; Wang, S. M.; Wang, T.; Wang, T.; Wang, W.; Wang, X.; Wanotayaroj, C.; Warburton, A.; Ward, C. P.; Wardrope, D. R.; Washbrook, A.; Watkins, P. M.; Watson, A. T.; Watson, M. F.; Watts, G.; Watts, S.; Waugh, B. M.; Webb, S.; Weber, M. S.; Weber, S. W.; Webster, J. S.; Weidberg, A. R.; Weinert, B.; Weingarten, J.; Weiser, C.; Weits, H.; Wells, P. S.; Wenaus, T.; Wengler, T.; Wenig, S.; Wermes, N.; Werner, M.; Werner, M. D.; Werner, P.; Wessels, M.; Wetter, J.; Whalen, K.; Whallon, N. L.; Wharton, A. M.; White, A.; White, M. J.; White, R.; Whiteson, D.; Wickens, F. J.; Wiedenmann, W.; Wielers, M.; Wienemann, P.; Wiglesworth, C.; Wiik-Fuchs, L. A. M.; Wildauer, A.; Wilk, F.; Wilkens, H. G.; Williams, H. H.; Williams, S.; Willis, C.; Willocq, S.; Wilson, J. A.; Wingerter-Seez, I.; Winklmeier, F.; Winston, O. J.; Winter, B. T.; Wittgen, M.; Wittkowski, J.; Wolf, T. M. H.; Wolter, M. W.; Wolters, H.; Worm, S. D.; Wosiek, B. K.; Wotschack, J.; Woudstra, M. J.; Wozniak, K. W.; Wu, M.; Wu, M.; Wu, S. L.; Wu, X.; Wu, Y.; Wyatt, T. R.; Wynne, B. M.; Xella, S.; Xu, D.; Xu, L.; Yabsley, B.; Yacoob, S.; Yamaguchi, D.; Yamaguchi, Y.; Yamamoto, A.; Yamamoto, S.; Yamanaka, T.; Yamauchi, K.; Yamazaki, Y.; Yan, Z.; Yang, H.; Yang, H.; Yang, Y.; Yang, Z.; Yao, W.-M.; Yap, Y. C.; Yasu, Y.; Yatsenko, E.; Yau Wong, K. H.; Ye, J.; Ye, S.; Yeletskikh, I.; Yen, A. L.; Yildirim, E.; Yorita, K.; Yoshida, R.; Yoshihara, K.; Young, C.; Young, C. J. S.; Youssef, S.; Yu, D. R.; Yu, J.; Yu, J. M.; Yu, J.; Yuan, L.; Yuen, S. P. Y.; Yusuff, I.; Zabinski, B.; Zaidan, R.; Zaitsev, A. M.; Zakharchuk, N.; Zalieckas, J.; Zaman, A.; Zambito, S.; Zanello, L.; Zanzi, D.; Zeitnitz, C.; Zeman, M.; Zemla, A.; Zeng, J. C.; Zeng, Q.; Zengel, K.; Zenin, O.; Ženiš, T.; Zerwas, D.; Zhang, D.; Zhang, F.; Zhang, G.; Zhang, H.; Zhang, J.; Zhang, L.; Zhang, R.; Zhang, R.; Zhang, X.; Zhang, Z.; Zhao, X.; Zhao, Y.; Zhao, Z.; Zhemchugov, A.; Zhong, J.; Zhou, B.; Zhou, C.; Zhou, L.; Zhou, L.; Zhou, M.; Zhou, N.; Zhu, C. G.; Zhu, H.; Zhu, J.; Zhu, Y.; Zhuang, X.; Zhukov, K.; Zibell, A.; Zieminska, D.; Zimine, N. I.; Zimmermann, C.; Zimmermann, S.; Zinonos, Z.; Zinser, M.; Ziolkowski, M.; Živković, L.; Zobernig, G.; Zoccoli, A.; zur Nedden, M.; Zwalinski, L.

2016-09-01

Searches for new resonances decaying into two photons in the ATLAS experiment at the CERN Large Hadron Collider are described. The analysis is based on proton-proton collision data corresponding to an integrated luminosity of 3.2 fb-1 at √{s}=13 TeV recorded in 2015. Two searches are performed, one targeted at a spin-2 particle of mass larger than 500 GeV, using Randall-Sundrum graviton states as a benchmark model, and one optimized for a spin-0 particle of mass larger than 200 GeV. Varying both the mass and the decay width, the most significant deviation from the background-only hypothesis is observed at a diphoton invariant mass around 750 GeV with local significances of 3.8 and 3.9 standard deviations in the searches optimized for a spin-2 and spin-0 particle, respectively. The global significances are estimated to be 2.1 standard deviations for both analyses. The consistency between the data collected at 13 TeV and 8 TeV is also evaluated. Limits on the production cross section times branching ratio to two photons for the two resonance types are reported. [Figure not available: see fulltext.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aad, G.; Abbott, B.; Abdallah, J.

The top quark mass was measured in the channelsmore » $$t\\bar{t}$$→ lepton+jets and $$t\\bar{t}$$→ dilepton (lepton = e,μ) based on ATLAS data recorded in 2011. The data were taken at the LHC with a proton–proton centre-of-mass energy of √s = 7 TeV and correspond to an integrated luminosity of 4.6 fb –1. The $$t\\bar{t}$$→ lepton+jets analysis uses a three-dimensional template technique which determines the top quark mass together with a global jet energy scale factor (JSF), and a relative b-to-light-jet energy scale factor (bJSF), where the terms b-jets and light-jets refer to jets originating from b-quarks and u, d, c, s-quarks or gluons, respectively. The analysis of the $$t\\bar{t}$$→ dilepton channel exploits a one-dimensional template method using the m ℓb observable, defined as the average invariant mass of the two lepton+b-jet pairs in each event. The top quark mass is measured to be 172.33 ± 0.75 (stat + JSF + bJSF) ± 1.02(syst) GeV, and 173.79 ± 0.54(stat) ± 1.30(syst) GeV in the $$t\\bar{t}$$→ lepton+jets and $$t\\bar{t}$$→ dilepton channels, respectively. Thus, the combination of the two results yields m top = 172.99 ± 0.48(stat) ± 0.78(syst) GeV, with a total uncertainty of 0.91 GeV.« less

Genome editing using CRISPR/Cas9-targeted mutagenesis: An opportunity for yield improvements of crop plants grown under environmental stresses.

PubMed

Abdelrahman, Mostafa; Al-Sadi, Abdullah M; Pour-Aboughadareh, Alireza; Burritt, David J; Tran, Lam-Son Phan

2018-03-12

Developing more crops able to sustainably produce high yields when grown under biotic/abiotic stresses is an important goal, if crop production and food security are to be guaranteed in the face of ever-increasing human population and unpredictable global climatic conditions. However, conventional crop improvement, through random mutagenesis or genetic recombination, is time-consuming and cannot keep pace with increasing food demands. Targeted genome editing (GE) technologies, especially clustered regularly interspaced short palindromic repeats (CRISPR)/(CRISPR)-associated protein 9 (Cas9), have great potential to aid in the breeding of crops that are able to produce high yields under conditions of biotic/abiotic stress. This is due to their high efficiency, accuracy and low risk of off-target effects, compared with conventional random mutagenesis methods. The use of CRISPR/Cas9 system has grown very rapidly in recent years with numerous examples of targeted mutagenesis in crop plants, including gene knockouts, modifications, and the activation and repression of target genes. The potential of the GE approach for crop improvement has been clearly demonstrated. However, the regulation and social acceptance of GE crops still remain a challenge. In this review, we evaluate the recent applications of the CRISPR/Cas9-mediated GE, as a means to produce crop plants with greater resilience to the stressors they encounter when grown under increasing stressful environmental conditions. Copyright © 2018 Elsevier Masson SAS. All rights reserved.

Germanium CMOS potential from material and process perspectives: Be more positive about germanium

NASA Astrophysics Data System (ADS)

Toriumi, Akira; Nishimura, Tomonori

2018-01-01

CMOS miniaturization is now approaching the sub-10 nm level, and further downscaling is expected. This size scaling will end sooner or later, however, because the typical size is approaching the atomic distance level in crystalline Si. In addition, it is said that electron transport in FETs is ballistic or nearly ballistic, which means that the injection velocity at the virtual source is a physical parameter relevant for estimating the driving current. Channel-materials with higher carrier mobility than Si are nonetheless needed, and the carrier mobility in the channels is a parameter important with regard to increasing the injection velocity. Although the density of states in the channel has not been discussed often, it too is relevant for estimating the channel current. Both the mobility and the density of states are in principle related to the effective mass of the carrier. From this device physics viewpoint, we expect germanium (Ge) CMOS to be promising for scaling beyond the Si CMOS limit because the bulk mobility values of electrons and holes in Ge are much higher than those of electrons and holes in Si, and the electron effective mass in Ge is not much less than that in III-V compounds. There is a debate that Ge should be used for p-MOSFETs and III-V compounds for n-MOSFETs, but considering that the variability or nonuniformity of the FET performance in today’s CMOS LSIs is a big challenge, it seems that much more attention should be paid to the simplicity of the material design and of the processing steps. Nevertheless, Ge faces a number of challenges even in case that only the FET level is concerned. One of the big problems with Ge CMOS technology has been its poor performance in n-MOSFETs. While the hole mobility in p-FETs has been improved, the electron mobility in the inversion layer of Ge FETs remains a serious concern. If this is due to the inherent properties of Ge, only p-MOSFETs might be used for device applications. To make Ge CMOS devices practically viable, we need to understand why electron mobility is severely degraded in the inversion layer in Ge n-channel MOSFETs and to find out how it can be increased. In the Si CMOS technology, the SiO2/Si interface has long been investigated and cannot be ignored even after the introduction of high-k gate stack technology. In that sense, the GeO2/Ge interface should be intensively studied to make the best of Ge’s advantages. Therefore we first discuss the GeO2/Ge interface with regard to its physical and electrical characteristics. When we regard Ge as a channel material beyond Si for high performance ULSIs, we also have to seriously consider the gate stack scalability and reliability. The source/drain engineering, as well as the gate stack formation, is another challenge in Ge MOSFET design. Both the higher metal/Ge contact resistance and the larger p/n junction leakage current may be the consequences of Ge’s intrinsic properties because they are derived from the strong Fermi-level pinning and the narrow energy band gap, respectively. Even if the carrier transport in the channel may be ideally ballistic, these properties should degrade FET properties. The narrower energy band gap of Ge is often addressed, but the higher dielectric constant of Ge is rarely discussed. This is also the case for most of the other high-mobility materials. The dielectric constant is directly and negatively related to short-channel effects, and we have not been able to provide a substantial solution to overcome this hardship. We have to keep this in mind for the short-channel FET operation. Although a number of problems remain to be solved, in this paper, we view the current status of Ge FET technology positively. A number of (but not all) Ge-related challenges have been overcome in the past 10 years, which seems to be a good time to summarize the status of Ge technology, particularly materials engineering aspects rather than device integration issues. Since we cannot cover all of the results published to date, we mainly discuss fundamental aspects based on our experimental results. Remaining challenges are also addressed but not comprehensively. Integration issues are not discussed in this review. Finally, new types of electron devices utilizing Ge’s advantages are briefly introduced on the basis of our experimental results.

Development of Phase Change Materials for RF Switch Applications

NASA Astrophysics Data System (ADS)

King, Matthew Russell

For decades chalcogenide-based phase change materials (PCMs) have been reliably implemented in optical storage and digital memory platforms. Owing to the substantial differences in optical and electronic properties between crystalline and amorphous states, device architectures requiring a "1" and "0" or "ON" and "OFF" states are attainable with PCMs if a method for amorphizing and crystallizing the PCM is demonstrated. Taking advantage of more than just the binary nature of PCM electronic properties, recent reports have shown that the near-metallic resistivity of some PCMs allow one to manufacture high performance RF switches and related circuit technologies. One of the more promising RF switch technologies is the Inline Phase Change Switch (IPCS) which utilizes GeTe as the active material. Initial reports show that an electrically isolated, thermally coupled thin film heater can successfully convert GeTe between crystalline and amorphous states, and with proper design an RF figure of merit cutoff frequency (FCO) of 12.5 THz can be achieved. In order to realize such world class performance a significant development effort was undertaken to understand the relationship between fundamental GeTe properties, thin film deposition method and resultant device properties. Deposition pressure was found to be the most important deposition process parameter, as it was found to control Ge:Te ratio, oxygen content, Ar content, film density and surface roughness. Ultimately a first generation deposition process produced GeTe films with a crystalline resistivity of 3 ohm-mum. Upon implementing these films into IPCS devices, post-cycling morphological analysis was undertaken using STEM and related analyses. It was revealed that massive structural changes occur in the GeTe during switching, most notably the formation of an assembly of voids along the device centerline and large GeTe grains on either side of the so-called active region. Restructuring of this variety was tied to changes in ON-state resistance with increasing pulse number, where initially porous and granular GeTe was converted to large crystalline domains comprising the majority of the RF gap. A phenomenological model for this morphology was presented in which the OFF pulse melts a given width of GeTe and upon cooling the crystalline template outside the melt region acts as a template for an inward-propagating crystalline growth front. This model was further extended to explain observed morphology for ON pulses. The voids observed along the device centerline were connected to increasing OFF state resistance and a relatively stable ON state with increasing pulse number via a series resistance model. As a result of this analysis, OFF state resistance was suggested as an early indicator of device reliability. Finally, microstructural and electrical property observations were used as a basis for implementing improvements to the GeTe deposition process in the form of a heated substrate platform. It was shown that this provides a viable method for attaining stable as-deposited GeTe morphology and a substantially improved crystalline resistivity (2 ohm-mum). This body of work ultimately provides a blueprint which connects fundamental GeTe properties with deposition processes and device performance.

Going Global: Utilizing Instructional Geocaching to Enhance Students' Global Competency

ERIC Educational Resources Information Center

Szolosi, Andrew

2012-01-01

Within contemporary society, technology has taken on an integral role in the way we come to know and understand the world. In recognition of that reality, an increasing number of educators have begun to utilize an emerging technology resource, GPS devices, and a GPS-based activity, geocaching, to help enhance students' global competency. The…

78 FR 69447 - Importer of Controlled Substances; Notice of Application; GE Healthcare

Federal Register 2010, 2011, 2012, 2013, 2014

2013-11-19

... radioactive diagnostic imaging agent utilized in the diagnosis of Parkinson's disease. Any bulk manufacturer...) of the Act (21 U.S.C. 952(a)(2)(B)) may, in the circumstances set forth in 21 U.S.C. 958(i), file... Administration, that the requirements for such registration pursuant to 21 U.S.C. 958(a); 21 U.S.C. 823(a); and...

An Expert Instructor's Use of Social Congruence, Cognitive Congruence, and Expertise in an Online Case-Based Instructional Design Course

ERIC Educational Resources Information Center

Watson, Sunnie Lee; Koehler, Adrie A.; Ertmer, Peggy; Kim, WooRi; Rico, Rudy

2018-01-01

Promoting and sustaining effective discussion--that which contributes to learning--is a skill that eludes many instructors (Darling-Hammond, 2008; Ge, Yamashiro, & Lee, 2000). This study explored the role and strategies of an expert instructor in an online advanced instructional design (ID) course that utilized a case-based learning (CBL)…

Exploiting jet binning to identify the initial state of high-mass resonances

NASA Astrophysics Data System (ADS)

Ebert, Markus A.; Liebler, Stefan; Moult, Ian; Stewart, Iain W.; Tackmann, Frank J.; Tackmann, Kerstin; Zeune, Lisa

2016-09-01

If a new high-mass resonance is discovered at the Large Hadron Collider, model-independent techniques to identify the production mechanism will be crucial to understand its nature and effective couplings to Standard Model particles. We present a powerful and model-independent method to infer the initial state in the production of any high-mass color-singlet system by using a tight veto on accompanying hadronic jets to divide the data into two mutually exclusive event samples (jet bins). For a resonance of several hundred GeV, the jet binning cut needed to discriminate quark and gluon initial states is in the experimentally accessible range of several tens of GeV. It also yields comparable cross sections for both bins, making this method viable already with the small event samples available shortly after a discovery. Theoretically, the method is made feasible by utilizing an effective field theory setup to compute the jet cut dependence precisely and model independently and to systematically control all sources of theoretical uncertainties in the jet binning, as well as their correlations. We use a 750 GeV scalar resonance as an example to demonstrate the viability of our method.

Measurement of D0 Azimuthal Anisotropy at Midrapidity in Au +Au Collisions at √{sN N }=200 GeV

NASA Astrophysics Data System (ADS)

Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; Aggarwal, M. M.; Ahammed, Z.; Ajitanand, N. N.; Alekseev, I.; Anderson, D. M.; Aoyama, R.; Aparin, A.; Arkhipkin, D.; Aschenauer, E. C.; Ashraf, M. U.; Attri, A.; Averichev, G. S.; Bai, X.; Bairathi, V.; Behera, A.; Bellwied, R.; Bhasin, A.; Bhati, A. K.; Bhattarai, P.; Bielcik, J.; Bielcikova, J.; Bland, L. C.; Bordyuzhin, I. G.; Bouchet, J.; Brandenburg, J. D.; Brandin, A. V.; Brown, D.; Bunzarov, I.; Butterworth, J.; Caines, H.; Calderón de la Barca Sánchez, M.; Campbell, J. M.; Cebra, D.; Chakaberia, I.; Chaloupka, P.; Chang, Z.; Chankova-Bunzarova, N.; Chatterjee, A.; Chattopadhyay, S.; Chen, X.; Chen, J. H.; Chen, X.; Cheng, J.; Cherney, M.; Christie, W.; Contin, G.; Crawford, H. J.; Das, S.; De Silva, L. C.; Debbe, R. R.; Dedovich, T. G.; Deng, J.; Derevschikov, A. A.; Didenko, L.; Dilks, C.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Dunkelberger, L. E.; Dunlop, J. C.; Efimov, L. G.; Elsey, N.; Engelage, J.; Eppley, G.; Esha, R.; Esumi, S.; Evdokimov, O.; Ewigleben, J.; Eyser, O.; Fatemi, R.; Fazio, S.; Federic, P.; Federicova, P.; Fedorisin, J.; Feng, Z.; Filip, P.; Finch, E.; Fisyak, Y.; Flores, C. E.; Fulek, L.; Gagliardi, C. A.; Garand, D.; Geurts, F.; Gibson, A.; Girard, M.; Greiner, L.; Grosnick, D.; Gunarathne, D. S.; Guo, Y.; Gupta, A.; Gupta, S.; Guryn, W.; Hamad, A. I.; Hamed, A.; Harlenderova, A.; Harris, J. W.; He, L.; Heppelmann, S.; Heppelmann, S.; Hirsch, A.; Hoffmann, G. W.; Horvat, S.; Huang, T.; Huang, B.; Huang, X.; Huang, H. Z.; Humanic, T. J.; Huo, P.; Igo, G.; Jacobs, W. W.; Jentsch, A.; Jia, J.; Jiang, K.; Jowzaee, S.; Judd, E. G.; Kabana, S.; Kalinkin, D.; Kang, K.; Kauder, K.; Ke, H. W.; Keane, D.; Kechechyan, A.; Khan, Z.; Kikoła, D. P.; Kisel, I.; Kisiel, A.; Kochenda, L.; Kocmanek, M.; Kollegger, T.; Kosarzewski, L. K.; Kraishan, A. F.; Kravtsov, P.; Krueger, K.; Kulathunga, N.; Kumar, L.; Kvapil, J.; Kwasizur, J. H.; Lacey, R.; Landgraf, J. M.; Landry, K. D.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, J. H.; Li, X.; Li, C.; Li, W.; Li, Y.; Lidrych, J.; Lin, T.; Lisa, M. A.; Liu, H.; Liu, P.; Liu, Y.; Liu, F.; Ljubicic, T.; Llope, W. J.; Lomnitz, M.; Longacre, R. S.; Luo, S.; Luo, X.; Ma, G. L.; Ma, L.; Ma, Y. G.; Ma, R.; Magdy, N.; Majka, R.; Mallick, D.; Margetis, S.; Markert, C.; Matis, H. S.; Meehan, K.; Mei, J. C.; Miller, Z. W.; Minaev, N. G.; Mioduszewski, S.; Mishra, D.; Mizuno, S.; Mohanty, B.; Mondal, M. M.; Morozov, D. A.; Mustafa, M. K.; Nasim, Md.; Nayak, T. K.; Nelson, J. M.; Nie, M.; Nigmatkulov, G.; Niida, T.; Nogach, L. V.; Nonaka, T.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Oh, K.; Okorokov, V. A.; Olvitt, D.; Page, B. S.; Pak, R.; Pandit, Y.; Panebratsev, Y.; Pawlik, B.; Pei, H.; Perkins, C.; Pile, P.; Pluta, J.; Poniatowska, K.; Porter, J.; Posik, M.; Poskanzer, A. M.; Pruthi, N. K.; Przybycien, M.; Putschke, J.; Qiu, H.; Quintero, A.; Ramachandran, S.; Ray, R. L.; Reed, R.; Rehbein, M. J.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Roth, J. D.; Ruan, L.; Rusnak, J.; Rusnakova, O.; Sahoo, N. R.; Sahu, P. K.; Salur, S.; Sandweiss, J.; Saur, M.; Schambach, J.; Schmah, A. M.; Schmidke, W. B.; Schmitz, N.; Schweid, B. R.; Seger, J.; Sergeeva, M.; Seyboth, P.; Shah, N.; Shahaliev, E.; Shanmuganathan, P. V.; Shao, M.; Sharma, A.; Sharma, M. K.; Shen, W. Q.; Shi, Z.; Shi, S. S.; Shou, Q. Y.; Sichtermann, E. P.; Sikora, R.; Simko, M.; Singha, S.; Skoby, M. J.; Smirnov, N.; Smirnov, D.; Solyst, W.; Song, L.; Sorensen, P.; Spinka, H. M.; Srivastava, B.; Stanislaus, T. D. S.; Strikhanov, M.; Stringfellow, B.; Sugiura, T.; Sumbera, M.; Summa, B.; Sun, Y.; Sun, X. M.; Sun, X.; Surrow, B.; Svirida, D. N.; Szelezniak, M. A.; Tang, A. H.; Tang, Z.; Taranenko, A.; Tarnowsky, T.; Tawfik, A.; Thäder, J.; Thomas, J. H.; Timmins, A. R.; Tlusty, D.; Todoroki, T.; Tokarev, M.; Trentalange, S.; Tribble, R. E.; Tribedy, P.; Tripathy, S. K.; Trzeciak, B. A.; Tsai, O. D.; Ullrich, T.; Underwood, D. G.; Upsal, I.; Van Buren, G.; van Nieuwenhuizen, G.; Vasiliev, A. N.; Videbæk, F.; Vokal, S.; Voloshin, S. A.; Vossen, A.; Wang, G.; Wang, Y.; Wang, F.; Wang, Y.; Webb, J. C.; Webb, G.; Wen, L.; Westfall, G. D.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, Y.; Xiao, Z. G.; Xie, W.; Xie, G.; Xu, J.; Xu, N.; Xu, Q. H.; Xu, Y. F.; Xu, Z.; Yang, Y.; Yang, Q.; Yang, C.; Yang, S.; Ye, Z.; Ye, Z.; Yi, L.; Yip, K.; Yoo, I.-K.; Yu, N.; Zbroszczyk, H.; Zha, W.; Zhang, Z.; Zhang, X. P.; Zhang, J. B.; Zhang, S.; Zhang, J.; Zhang, Y.; Zhang, J.; Zhang, S.; Zhao, J.; Zhong, C.; Zhou, L.; Zhou, C.; Zhu, X.; Zhu, Z.; Zyzak, M.; STAR Collaboration

2017-05-01

We report the first measurement of the elliptic anisotropy (v2) of the charm meson D0 at midrapidity (|y |<1 ) in Au +Au collisions at √{sN N}=200 GeV . The measurement was conducted by the STAR experiment at RHIC utilizing a new high-resolution silicon tracker. The measured D0 v2 in 0%-80% centrality Au +Au collisions can be described by a viscous hydrodynamic calculation for a transverse momentum (pT) of less than 4 GeV /c . The D0 v2 as a function of transverse kinetic energy (mT-m0, where mT=√{pT2+m02 }) is consistent with that of light mesons in 10%-40% centrality Au +Au collisions. These results suggest that charm quarks have achieved local thermal equilibrium with the medium created in such collisions. Several theoretical models, with the temperature-dependent, dimensionless charm spatial diffusion coefficient (2 π T Ds) in the range of ˜2 - 12 , are able to simultaneously reproduce our D0 v2 result and our previously published results for the D0 nuclear modification factor.

Germanium Sub-Microspheres Synthesized by Picosecond Pulsed Laser Melting in Liquids: Educt Size Effects

PubMed Central

Zhang, Dongshi; Lau, Marcus; Lu, Suwei; Barcikowski, Stephan; Gökce, Bilal

2017-01-01

Pulsed laser melting in liquid (PLML) has emerged as a facile approach to synthesize submicron spheres (SMSs) for various applications. Typically lasers with long pulse durations in the nanosecond regime are used. However, recent findings show that during melting the energy absorbed by the particle will be dissipated promptly after laser-matter interaction following the temperature decrease within tens of nanoseconds and hence limiting the efficiency of longer pulse widths. Here, the feasibility to utilize a picosecond laser to synthesize Ge SMSs (200~1000 nm in diameter) is demonstrated by irradiating polydisperse Ge powders in water and isopropanol. Through analyzing the educt size dependent SMSs formation mechanism, we find that Ge powders (200~1000 nm) are directly transformed into SMSs during PLML via reshaping, while comparatively larger powders (1000~2000 nm) are split into daughter SMSs via liquid droplet bisection. Furthermore, the contribution of powders larger than 2000 nm and smaller than 200 nm to form SMSs is discussed. This work shows that compared to nanosecond lasers, picosecond lasers are also suitable to produce SMSs if the pulse duration is longer than the material electron-phonon coupling period to allow thermal relaxation. PMID:28084408

Optical fingerprints of solid-liquid interfaces: a joint ATR-IR and first principles investigation

NASA Astrophysics Data System (ADS)

Yang, L.; Niu, F.; Tecklenburg, S.; Pander, M.; Nayak, S.; Erbe, A.; Wippermann, S.; Gygi, F.; Galli, G.

Despite the importance of understanding the structural and bonding properties of solid-liquid interfaces for a wide range of (photo-)electrochemical applications, there are presently no experimental techniques available to directly probe the microscopic structure of solid-liquid interfaces. To develop robust strategies to interpret experiments and validate theory, we carried out attenuated total internal reflection (ATR-IR) spectroscopy measurements and ab initio molecular dynamics (AIMD) simulations of the vibrational properties of interfaces between liquid water and well-controlled prototypical semiconductor substrates. We show the Ge(100)/H2O interface to feature a reversible potential-dependent surface phase transition between Ge-H and Ge-OH termination. The Si(100)/H2O interface is proposed as a model system for corrosion and oxidation processes. We performed AIMD calculations under finite electric fields, revealing different pathways for initial oxidation. These pathways are predicted to exhibit unique spectral signatures. A significant increase in surface specificity can be achieved utilizing an angle-dependent ATR-IR experiment, which allows to detect such signatures at the interfacial layer and consequently changes in the hydrogen bond network. Funding from DOE-BES Grant No. DE-SS0008939 and the Deutsche Forschungsgemeinschaft (RESOLV, EXC 1069) are gratefully acknowledged.

CrisprGE: a central hub of CRISPR/Cas-based genome editing.

PubMed

Kaur, Karambir; Tandon, Himani; Gupta, Amit Kumar; Kumar, Manoj

2015-01-01

CRISPR system is a powerful defense mechanism in bacteria and archaea to provide immunity against viruses. Recently, this process found a new application in intended targeting of the genomes. CRISPR-mediated genome editing is performed by two main components namely single guide RNA and Cas9 protein. Despite the enormous data generated in this area, there is a dearth of high throughput resource. Therefore, we have developed CrisprGE, a central hub of CRISPR/Cas-based genome editing. Presently, this database holds a total of 4680 entries of 223 unique genes from 32 model and other organisms. It encompasses information about the organism, gene, target gene sequences, genetic modification, modifications length, genome editing efficiency, cell line, assay, etc. This depository is developed using the open source LAMP (Linux Apache MYSQL PHP) server. User-friendly browsing, searching facility is integrated for easy data retrieval. It also includes useful tools like BLAST CrisprGE, BLAST NTdb and CRISPR Mapper. Considering potential utilities of CRISPR in the vast area of biology and therapeutics, we foresee this platform as an assistance to accelerate research in the burgeoning field of genome engineering. © The Author(s) 2015. Published by Oxford University Press.

Measurement of Ratios of ν μ Charged-Current Cross Sections on C, Fe, and Pb to CH at Neutrino Energies 2–20 GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Tice, B. G.; Datta, M.; Mousseau, J.

2014-06-01

We present measurements of ν μ charged-current cross section ratios on carbon, iron, and lead relative to a scintillator (CH) using the fine-grained MINERvA detector exposed to the NuMI neutrino beam at Fermilab. The measurements utilize events of energies 2 < E ν < 20 GeV , with ( E ν more » ) = 8 GeV , which have a reconstructed μ - scattering angle less than 17° to extract ratios of inclusive total cross sections as a function of neutrino energy E ν and flux-integrated differential cross sections with respect to the Bjorken scaling variable x . These results provide the first high-statistics direct measurements of nuclear effects in neutrino scattering using different targets in the same neutrino beam. Measured cross section ratios exhibit a relative depletion at low x and enhancement at large x . Both become more pronounced as the nucleon number of the target nucleus increases. The data are not reproduced by GENIE, a conventional neutrino-nucleus scattering simulation, or by the alternative models for the nuclear dependence of inelastic scattering that are considered.« less

Single-Event Effects in High-Frequency Linear Amplifiers: Experiment and Analysis

NASA Astrophysics Data System (ADS)

Zeinolabedinzadeh, Saeed; Ying, Hanbin; Fleetwood, Zachary E.; Roche, Nicolas J.-H.; Khachatrian, Ani; McMorrow, Dale; Buchner, Stephen P.; Warner, Jeffrey H.; Paki-Amouzou, Pauline; Cressler, John D.

2017-01-01

The single-event transient (SET) response of two different silicon-germanium (SiGe) X-band (8-12 GHz) low noise amplifier (LNA) topologies is fully investigated in this paper. The two LNAs were designed and implemented in 130nm SiGe HBT BiCMOS process technology. Two-photon absorption (TPA) laser pulses were utilized to induce transients within various devices in these LNAs. Impulse response theory is identified as a useful tool for predicting the settling behavior of the LNAs subjected to heavy ion strikes. Comprehensive device and circuit level modeling and simulations were performed to accurately simulate the behavior of the circuits under ion strikes. The simulations agree well with TPA measurements. The simulation, modeling and analysis presented in this paper can be applied for any other circuit topologies for SET modeling and prediction.

Design of a GaAs/Ge Solar Array for Unmanned Aerial Vehicles

NASA Technical Reports Server (NTRS)

Scheiman, David A.; Brinker, David J.; Bents, David J.; Colozza, Anthony J.

1995-01-01

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Design of a GaAs/Ge solar array for unmanned aerial vehicles

NASA Astrophysics Data System (ADS)

Scheiman, David A.; Brinker, David J.; Bents, David J.; Colozza, Anthony J.

1995-03-01

Unmanned Aerial Vehicles (UAV) are being proposed for many applications including surveillance, mapping and atmospheric studies. These applications require a lightweight, low speed, medium to long duration airplane. Due to the weight, speed, and altitude constraints imposed on such aircraft, solar array generated electric power is a viable alternative to air-breathing engines. Development of such aircraft is currently being funded under the Environmental Research Aircraft and Sensor Technology (ERAST) program. NASA Lewis Research Center (LeRC) is currently building a Solar Electric Airplane to demonstrate UAV technology. This aircraft utilizes high efficiency Applied Solar Energy Corporation (ASEC) GaAs/Ge space solar cells. The cells have been provided by the Air Force through the ManTech Office. Expected completion of the plane is early 1995, with the airplane currently undergoing flight testing using battery power.

Undoped Si/SiGe Depletion-Mode Few-Electron Double Quantum Dots

NASA Astrophysics Data System (ADS)

Borselli, Matthew; Huang, Biqin; Ross, Richard; Croke, Edward; Holabird, Kevin; Hazard, Thomas; Watson, Christopher; Kiselev, Andrey; Deelman, Peter; Alvarado-Rodriguez, Ivan; Schmitz, Adele; Sokolich, Marko; Gyure, Mark; Hunter, Andrew

2011-03-01

We have successfully formed a double quantum dot in the sSi/SiGe material system without need for intentional dopants. In our design, a two-dimensional electron gas is formed in a strained silicon well by forward biasing a global gate. Lateral definition of quantum dots is established with reverse-biased gates with ~ 40 nm critical dimensions. Low-temperature capacitance and Hall measurements confirm electrons are confined in the Si-well with mobilities > 10 4 cm 2 / V - s . Further characterization identifies practical gate bias limits for this design and will be compared to simulation. Several double dot devices have been brought into the few-electron Coulomb blockade regime as measured by through-dot transport. Honeycomb diagrams and nonlinear through-dot transport measurements are used to quantify dot capacitances and addition energies of several meV. Sponsored by United States Department of Defense. Approved for Public Release, Distribution Unlimited.

Event shape analysis of deep inelastic scattering events with a large rapidity gap at HERA

NASA Astrophysics Data System (ADS)

ZEUS Collaboration; Breitweg, J.; Derrick, M.; Krakauer, D.; Magill, S.; Mikunas, D.; Musgrave, B.; Repond, J.; Stanek, R.; Talaga, R. L.; Yoshida, R.; Zhang, H.; Mattingly, M. C. K.; Anselmo, F.; Antonioli, P.; Bari, G.; Basile, M.; Bellagamba, L.; Boscherini, D.; Bruni, A.; Bruni, G.; Cara Romeo, G.; Castellini, G.; Cifarelli, L.; Cindolo, F.; Contin, A.; Corradi, M.; de Pasquale, S.; Gialas, I.; Giusti, P.; Iacobucci, G.; Laurenti, G.; Levi, G.; Margotti, A.; Massam, T.; Nania, R.; Palmonari, F.; Pesci, A.; Polini, A.; Ricci, F.; Sartorelli, G.; Zamora Garcia, Y.; Zichichi, A.; Amelung, C.; Bornheim, A.; Brock, I.; Coböken, K.; Crittenden, J.; Deffner, R.; Eckert, M.; Grothe, M.; Hartmann, H.; Heinloth, K.; Heinz, L.; Hilger, E.; Jakob, H.-P.; Katz, U. F.; Kerger, R.; Paul, E.; Pfeiffer, M.; Rembser, Ch.; Stamm, J.; Wedemeyer, R.; Wieber, H.; Bailey, D. S.; Campbell-Robson, S.; Cottingham, W. N.; Foster, B.; Hall-Wilton, R.; Hayes, M. E.; Heath, G. P.; Heath, H. F.; McFall, J. D.; Piccioni, D.; Roff, D. G.; Tapper, R. J.; Arneodo, M.; Ayad, R.; Capua, M.; Garfagnini, A.; Iannotti, L.; Schioppa, M.; Susinno, G.; Kim, J. Y.; Lee, J. H.; Lim, I. T.; Pac, M. Y.; Caldwell, A.; Cartiglia, N.; Jing, Z.; Liu, W.; Mellado, B.; Parsons, J. A.; Ritz, S.; Sampson, S.; Sciulli, F.; Straub, P. B.; Zhu, Q.; Borzemski, P.; Chwastowski, J.; Eskreys, A.; Figiel, J.; Klimek, K.; Przybycień , M. B.; Zawiejski, L.; Adamczyk, L.; Bednarek, B.; Bukowy, M.; Jeleń , K.; Kisielewska, D.; Kowalski, T.; Przybycień , M.; Rulikowska-Zarȩ Bska, E.; Suszycki, L.; Zaja C, J.; Duliń Ski, Z.; Kotań Ski, A.; Abbiendi, G.; Bauerdick, L. A. T.; Behrens, U.; Beier, H.; Bienlein, J. K.; Cases, G.; Deppe, O.; Desler, K.; Drews, G.; Fricke, U.; Gilkinson, D. J.; Glasman, C.; Göttlicher, P.; Haas, T.; Hain, W.; Hasell, D.; Johnson, K. F.; Kasemann, M.; Koch, W.; Kötz, U.; Kowalski, H.; Labs, J.; Lindemann, L.; Löhr, B.; Löwe, M.; Mań Czak, O.; Milewski, J.; Monteiro, T.; Ng, J. S. T.; Notz, D.; Ohrenberg, K.; Park, I. H.; Pellegrino, A.; Pelucchi, F.; Piotrzkowski, K.; Roco, M.; Rohde, M.; Roldán, J.; Ryan, J. J.; Savin, A. A.; Schneekloth, U.; Selonke, F.; Surrow, B.; Tassi, E.; Voß, T.; Westphal, D.; Wolf, G.; Wollmer, U.; Youngman, C.; Zsolararnecki, A. F.; Zeuner, W.; Burow, B. D.; Grabosch, H. J.; Meyer, A.; Schlenstedt, S.; Barbagli, G.; Gallo, E.; Pelfer, P.; Maccarrone, G.; Votano, L.; Bamberger, A.; Eisenhardt, S.; Markun, P.; Trefzger, T.; Wölfle, S.; Bromley, J. T.; Brook, N. H.; Bussey, P. J.; Doyle, A. T.; MacDonald, N.; Saxon, D. H.; Sinclair, L. E.; Strickland, E.; Waugh, R.; Bohnet, I.; Gendner, N.; Holm, U.; Meyer-Larsen, A.; Salehi, H.; Wick, K.; Gladilin, L. K.; Horstmann, D.; Kçira, D.; Klanner, R.; Lohrmann, E.; Poelz, G.; Schott, W.; Zetsche, F.; Bacon, T. C.; Butterworth, I.; Cole, J. E.; Howell, G.; Hung, B. H. Y.; Lamberti, L.; Long, K. R.; Miller, D. B.; Pavel, N.; Prinias, A.; Sedgbeer, J. K.; Sideris, D.; Walker, R.; Mallik, U.; Wang, S. M.; Wu, J. T.; Cloth, P.; Filges, D.; Fleck, J. I.; Ishii, T.; Kuze, M.; Suzuki, I.; Tokushuku, K.; Yamada, S.; Yamauchi, K.; Yamazaki, Y.; Hong, S. J.; Lee, S. B.; Nam, S. W.; Park, S. K.; Barreiro, F.; Fernández, J. P.; García, G.; Graciani, R.; Hernández, J. M.; Hervás, L.; Labarga, L.; Martínez, M.; del Peso, J.; Puga, J.; Terrón, J.; de Trocóniz, J. F.; Corriveau, F.; Hanna, D. S.; Hartmann, J.; Hung, L. W.; Murray, W. N.; Ochs, A.; Riveline, M.; Stairs, D. G.; St-Laurent, M.; Ullmann, R.; Tsurugai, T.; Bashkirov, V.; Dolgoshein, B. A.; Stifutkin, A.; Bashindzhagyan, G. L.; Ermolov, P. F.; Golubkov, Yu. A.; Khein, L. A.; Korotkova, N. A.; Korzhavina, I. A.; Kuzmin, V. A.; Lukina, O. Yu.; Proskuryakov, A. S.; Shcheglova, L. M.; Solomin, A. N.; Zotkin, S. A.; Bokel, C.; Botje, M.; Brümmer, N.; Chlebana, F.; Engelen, J.; Koffeman, E.; Kooijman, P.; van Sighem, A.; Tiecke, H.; Tuning, N.; Verkerke, W.; Vossebeld, J.; Vreeswijk, M.; Wiggers, L.; de Wolf, E.; Acosta, D.; Bylsma, B.; Durkin, L. S.; Gilmore, J.; Ginsburg, C. M.; Kim, C. L.; Ling, T. Y.; Nylander, P.; Romanowski, T. A.; Blaikley, H. E.; Cashmore, R. J.; Cooper-Sarkar, A. M.; Devenish, R. C. E.; Edmonds, J. K.; Große-Knetter, J.; Harnew, N.; Nath, C.; Noyes, V. A.; Quadt, A.; Ruske, O.; Tickner, J. R.; Uijterwaal, H.; Walczak, R.; Waters, D. S.; Bertolin, A.; Brugnera, R.; Carlin, R.; dal Corso, F.; Dosselli, U.; Limentani, S.; Morandin, M.; Posocco, M.; Stanco, L.; Stroili, R.; Voci, C.; Bulmahn, J.; Oh, B. Y.; Okrasiń Ski, J. R.; Toothacker, W. S.; Whitmore, J. J.; Iga, Y.; D'Agostini, G.; Marini, G.; Nigro, A.; Raso, M.; Hart, J. C.; McCubbin, N. A.; Shah, T. P.; Epperson, D.; Heusch, C.; Rahn, J. T.; Sadrozinski, H. F.-W.; Seiden, A.; Wichmann, R.; Williams, D. C.; Schwarzer, O.; Walenta, A. H.; Abramowicz, H.; Briskin, G.; Dagan, S.; Kananov, S.; Levy, A.; Abe, T.; Fusayasu, T.; Inuzuka, M.; Nagano, K.; Umemori, K.; Yamashita, T.; Hamatsu, R.; Hirose, T.; Homma, K.; Kitamura, S.; Matsushita, T.; Cirio, R.; Costa, M.; Ferrero, M. I.; Maselli, S.; Monaco, V.; Peroni, C.; Petrucci, M. C.; Ruspa, M.; Sacchi, R.; Solano, A.; Staiano, A.; Dardo, M.; Bailey, D. C.; Fagerstroem, C.-P.; Galea, R.; Hartner, G. F.; Joo, K. K.; Levman, G. M.; Martin, J. F.; Orr, R. S.; Polenz, S.; Sabetfakhri, A.; Simmons, D.; Teuscher, R. J.; Butterworth, J. M.; Catterall, C. D.; Jones, T. W.; Lane, J. B.; Saunders, R. L.; Sutton, M. R.; Wing, M.; Ciborowski, J.; Grzelak, G.; Kasprzak, M.; Muchorowski, K.; Nowak, R. J.; Pawlak, J. M.; Pawlak, R.; Tymieniecka, T.; Wróblewski, A. K.; Zakrzewski, J. A.; Adamus, M.; Coldewey, C.; Eisenberg, Y.; Hochman, D.; Karshon, U.; Badgett, W. F.; Chapin, D.; Cross, R.; Dasu, S.; Foudas, C.; Loveless, R. J.; Mattingly, S.; Reeder, D. D.; Smith, W. H.; Vaiciulis, A.; Wodarczyk, M.; Deshpande, A.; Dhawan, S.; Hughes, V. W.; Bhadra, S.; Frisken, W. R.; Khakzad, M.; Schmidke, W. B.

1998-03-01

A global event shape analysis of the multihadronic final states observed in neutral current deep inelastic scattering events with a large rapidity gap with respect to the proton direction is presented. The analysis is performed in the range 5<=Q2<=185 GeV2 and 160<=W<=250 GeV, where Q2 is the virtuality of the photon and W is the virtual-photon proton centre of mass energy. Particular emphasis is placed on the dependence of the shape variables, measured in the γ*-pomeron rest frame, on the mass of the hadronic final state, MX. With increasing MX the multihadronic final state becomes more collimated and planar. The experimental results are compared with several models which attempt to describe diffractive events. The broadening effects exhibited by the data require in these models a significant gluon component of the pomeron.

Validation of GEANT4 Monte Carlo models with a highly granular scintillator-steel hadron calorimeter

NASA Astrophysics Data System (ADS)

Adloff, C.; Blaha, J.; Blaising, J.-J.; Drancourt, C.; Espargilière, A.; Gaglione, R.; Geffroy, N.; Karyotakis, Y.; Prast, J.; Vouters, G.; Francis, K.; Repond, J.; Schlereth, J.; Smith, J.; Xia, L.; Baldolemar, E.; Li, J.; Park, S. T.; Sosebee, M.; White, A. P.; Yu, J.; Buanes, T.; Eigen, G.; Mikami, Y.; Watson, N. K.; Mavromanolakis, G.; Thomson, M. A.; Ward, D. R.; Yan, W.; Benchekroun, D.; Hoummada, A.; Khoulaki, Y.; Apostolakis, J.; Dotti, A.; Folger, G.; Ivantchenko, V.; Uzhinskiy, V.; Benyamna, M.; Cârloganu, C.; Fehr, F.; Gay, P.; Manen, S.; Royer, L.; Blazey, G. C.; Dyshkant, A.; Lima, J. G. R.; Zutshi, V.; Hostachy, J.-Y.; Morin, L.; Cornett, U.; David, D.; Falley, G.; Gadow, K.; Göttlicher, P.; Günter, C.; Hermberg, B.; Karstensen, S.; Krivan, F.; Lucaci-Timoce, A.-I.; Lu, S.; Lutz, B.; Morozov, S.; Morgunov, V.; Reinecke, M.; Sefkow, F.; Smirnov, P.; Terwort, M.; Vargas-Trevino, A.; Feege, N.; Garutti, E.; Marchesini, I.; Ramilli, M.; Eckert, P.; Harion, T.; Kaplan, A.; Schultz-Coulon, H.-Ch; Shen, W.; Stamen, R.; Bilki, B.; Norbeck, E.; Onel, Y.; Wilson, G. W.; Kawagoe, K.; Dauncey, P. D.; Magnan, A.-M.; Bartsch, V.; Wing, M.; Salvatore, F.; Calvo Alamillo, E.; Fouz, M.-C.; Puerta-Pelayo, J.; Bobchenko, B.; Chadeeva, M.; Danilov, M.; Epifantsev, A.; Markin, O.; Mizuk, R.; Novikov, E.; Popov, V.; Rusinov, V.; Tarkovsky, E.; Kirikova, N.; Kozlov, V.; Smirnov, P.; Soloviev, Y.; Buzhan, P.; Ilyin, A.; Kantserov, V.; Kaplin, V.; Karakash, A.; Popova, E.; Tikhomirov, V.; Kiesling, C.; Seidel, K.; Simon, F.; Soldner, C.; Szalay, M.; Tesar, M.; Weuste, L.; Amjad, M. S.; Bonis, J.; Callier, S.; Conforti di Lorenzo, S.; Cornebise, P.; Doublet, Ph; Dulucq, F.; Fleury, J.; Frisson, T.; van der Kolk, N.; Li, H.; Martin-Chassard, G.; Richard, F.; de la Taille, Ch; Pöschl, R.; Raux, L.; Rouëné, J.; Seguin-Moreau, N.; Anduze, M.; Boudry, V.; Brient, J.-C.; Jeans, D.; Mora de Freitas, P.; Musat, G.; Reinhard, M.; Ruan, M.; Videau, H.; Bulanek, B.; Zacek, J.; Cvach, J.; Gallus, P.; Havranek, M.; Janata, M.; Kvasnicka, J.; Lednicky, D.; Marcisovsky, M.; Polak, I.; Popule, J.; Tomasek, L.; Tomasek, M.; Ruzicka, P.; Sicho, P.; Smolik, J.; Vrba, V.; Zalesak, J.; Belhorma, B.; Ghazlane, H.; Takeshita, T.; Uozumi, S.; Götze, M.; Hartbrich, O.; Sauer, J.; Weber, S.; Zeitnitz, C.

2013-07-01

Calorimeters with a high granularity are a fundamental requirement of the Particle Flow paradigm. This paper focuses on the prototype of a hadron calorimeter with analog readout, consisting of thirty-eight scintillator layers alternating with steel absorber planes. The scintillator plates are finely segmented into tiles individually read out via Silicon Photomultipliers. The presented results are based on data collected with pion beams in the energy range from 8 GeV to 100 GeV. The fine segmentation of the sensitive layers and the high sampling frequency allow for an excellent reconstruction of the spatial development of hadronic showers. A comparison between data and Monte Carlo simulations is presented, concerning both the longitudinal and lateral development of hadronic showers and the global response of the calorimeter. The performance of several GEANT4 physics lists with respect to these observables is evaluated.

Partial correlation-based functional connectivity analysis for functional near-infrared spectroscopy signals

NASA Astrophysics Data System (ADS)

Akın, Ata

2017-12-01

A theoretical framework, a partial correlation-based functional connectivity (PC-FC) analysis to functional near-infrared spectroscopy (fNIRS) data, is proposed. This is based on generating a common background signal from a high passed version of fNIRS data averaged over all channels as the regressor in computing the PC between pairs of channels. This approach has been employed to real data collected during a Stroop task. The results show a strong significance in the global efficiency (GE) metric computed by the PC-FC analysis for neutral, congruent, and incongruent stimuli (NS, CS, IcS; GEN=0.10±0.009, GEC=0.11±0.01, GEIC=0.13±0.015, p=0.0073). A positive correlation (r=0.729 and p=0.0259) is observed between the interference of reaction times (incongruent-neutral) and interference of GE values (GEIC-GEN) computed from [HbO] signals.

Earth resources data analysis program, phase 3

NASA Technical Reports Server (NTRS)

1975-01-01

Tasks were performed in two areas: (1) systems analysis and (2) algorithmic development. The major effort in the systems analysis task was the development of a recommended approach to the monitoring of resource utilization data for the Large Area Crop Inventory Experiment (LACIE). Other efforts included participation in various studies concerning the LACIE Project Plan, the utility of the GE Image 100, and the specifications for a special purpose processor to be used in the LACIE. In the second task, the major effort was the development of improved algorithms for estimating proportions of unclassified remotely sensed data. Also, work was performed on optimal feature extraction and optimal feature extraction for proportion estimation.

Structural, mechanical and optical investigations in the TeO2-rich part of the TeO2-GeO2-ZnO ternary glass system

NASA Astrophysics Data System (ADS)

Ghribi, N.; Dutreilh-Colas, M.; Duclère, J.-R.; Gouraud, F.; Chotard, T.; Karray, R.; Kabadou, A.; Thomas, P.

2015-02-01

Stable glasses are successfully synthesized in the TeO2-GeO2-ZnO system at 850 °C by the melt-quenching method and the glass forming domain is determined in the TeO2-rich part of the diagram. The thermal study, carried out using differential scanning calorimetry, reveals that the glass transition temperature, as well as the thermal stability, increases with the addition of ZnO or GeO2. Bulk glass samples are elaborated within two series of compositions, corresponding to fixed concentrations in GeO2 (respectively 5 or 10 mol. %), and to various contents in ZnO. Structural changes caused by the ZnO addition are discussed based on Raman spectroscopy data. A progressive but very moderate network depolymerization is shown with increasing amount of ZnO. However, two different regimes can be identified, depending on the ZnO content. It is believed that ZnO acts as a network modifier for compositions below 20 mol. %, and starts to participate as a glass network former over such concentration. It is well evidenced that GeO2 contributes to the increase in Young's modulus E, evaluated from ultrasonic echography measurements. In addition, this oxide favors the network reticulation detected by the decrease of the Poisson ratio and the increase of the fractal bond connectivity. However, the role of ZnO is more complicated and will be extensively discussed. The decrease in the atomic packing density Cg probably explains the global evolution of E as a function of ZnO content. The refractive indices and optical band gap energies are extracted from UV-Visible-NIR optical transmission data. For the studied glasses, it is found that the transmission threshold decreases with larger ZnO contents, reflecting the increase in the optical band gap value. Refractive index is finally seen to decrease as a function of both ZnO and GeO2 contents. Such variation is explained by the decrease of the molar electronic polarizability, and by the lower optical basicity values known for TeO3 entities in comparison to TeO4 units.

Near infrared group IV optoelectronics and novel pre-cursors for CVD epitaxy

NASA Astrophysics Data System (ADS)

Hazbun, Ramsey Michael

Near infrared and mid infrared optoelectronic devices have become increasingly important for the telecommunications, security, and medical imaging industries. The addition of nitrogen to III-V alloys has been widely studied as a method of modifying the band gap for mid infrared (IR) applications. In xGa1-xSb1-y Ny/InAs strained-layer superlattices with type-II (staggered) energy offsets on GaSb substrates, were modeled using eight-band k˙p simulations to analyze the superlattice miniband energies. Three different zero-stress strain balance conditions are reported: fixed superlattice period thickness, fixed InAs well thickness, and fixed InxGa1-xSb 1-yNy barrier thickness. Optoelectronics have traditionally been the realm of III-V semiconductors due to their direct band gap, while integrated circuit chips have been the realm of Group IV semiconductors such as silicon because of its relative abundance and ease of use. Recently the alloying of Sn with Ge and Si has been shown to allow direct band-gap light emission. This presents the exciting prospect of integrating optoelectronics into current Group IV chip fabrication facilities. However, new approaches for low temperature growth are needed to realize these new SiGeSn alloys. Silicon-germanium epitaxy via ultra-high vacuum chemical vapor deposition has the advantage of allowing low process temperatures. Deposition processes are sensitive to substrate surface preparation and the time delay between oxide removal and epitaxial growth. A new monitoring process utilizing doped substrates and defect decoration etching is demonstrated to have controllable and unique sensitivity to interfacial contaminants. Doped substrates were prepared and subjected to various loading conditions prior to the growth of typical Si/SiGe bilayers. The defect densities were correlated to the concentration of interfacial oxygen suggesting this monitoring process may be an effective complement to monitoring via secondary ion mass spectrometry measurements. The deposition of silicon using tetrasilane as a vapor pre-cursor is described for an ultra-high vacuum chemical vapor deposition tool. The growth rates and morphology of the Si epitaxial layers over a range of temperatures and pressures are presented. In order to understand the suitability of tetrasilane for the growth of SiGe and SiGeSn alloys, the layers were characterized using transmission electron microscopy, x-ray diffraction, spectroscopic ellipsometry, atomic force microscopy, and secondary ion mass spectrometry. To date no n-type doping has been demonstrated in GeSn alloys grown via MBE. A GaP decomposition source was used to grow n-type phosphorus doped GeSn layers on p- Ge substrates. Doping concentrations were calibrated using SIMS measurements. GeSn/Ge heterojunction diodes were grown and fabricated into mesa devices. Diode parameters were extracted from current-voltage measurements. The effects of P and Sn concentrations, metallization, and mesa geometry on device performance are all discussed.

Structure and Properties of Modified and Charge-Compensated Chalcogenide Glasses in the Na/Ba-Ga-Ge Selenide System

NASA Astrophysics Data System (ADS)

Mao, Alvin W.

Chalcogenide glasses exhibit unique optical properties such as infrared transparency owing to the low-phonon energies, optical non-linearity, and photo-induced effects that have important consequences for a wide range of technological applications. However, to fully utilize these properties, it is necessary to better understand the atomic-scale structure and structure-property relationships in this important class of materials. Of particular interest in this regard are glasses in the stoichiometric system Na2Se/BaSe--Ga 2Se3--GeSe2 as they are isoelectronic with the well-studied, oxide glasses of the type M2O(M'O)--Al 2O3--SiO2 (M = alkali, M' = alkaline earth). This dissertation investigates the structure of stoichiometric Na 2Se/BaSe--Ga2Se3--GeSe2 and off-stoichiometric BaSe--Ga2Se3--GeSe 2+/-Se glasses using a combination of Fourier-transform Raman and solid state nuclear magnetic resonance (NMR) spectroscopies. The spectroscopic data is then compared to composition-dependent trends in physical properties such as density, optical band gap, glass transition temperature, and melt fragility to develop predictive structural models of the short- and intermediate-range order in the glass network. These models significantly improve our current understanding of the effects of modifier addition on the structure and properties of chalcogenide glasses, and thus enable a more efficient engineering of these highly functional materials for applications as solid electrolytes in batteries or as optical components in infrared photonics. In general, the underlying stoichiometric Ga2Se3--GeSe 2 network consists primarily of corner-sharing (Ga/Ge)Se4 tetrahedra, where the coordination numbers of Ga, Ge, and Se are 4, 4, and 2, respectively. Some edge-sharing exists, but this configuration is relatively unstable and its concentration tends to decrease with any deviation from the GeSe2 composition. Due to the tetrahedral coordination of Ga, the initial addition of Se-deficient Ga2Se3 to GeSe 2 results in the preferential formation of Ge-Ge bonds, which are distributed such that the clustering of ethane-like (Se3)Ge-Ge(Se3) units is avoided to the maximum extent. This behavior is entirely consistent with the continuously-alloyed structural scenario of chalcogenide glasses. However, for contents of Ga2Se3 greater than about 25--30 mol%, the avoidance of Ga-Ga and mixed Ga-Ge bonds results in the appearance of three-coordinated Se as an alternate mechanism to accommodate the Se deficiency. The addition of either Na2Se or BaSe to Ga2Se 3--GeSe2 glasses introduces an ionic bonding character to an otherwise largely covalently bonded network. As a result, the structure responds by adopting characteristics of the charge-compensated structural scenario of oxide glasses. In the stoichiometric Na2Se/BaSe--Ga 2Se3--GeSe2 glasses, the ratio of Na 2Se/BaSe:Ga2Se3 = 1 serves as a chemical threshold, where the network consists predominantly of corner-sharing (Ga/Ge)e4 tetrahedra, and the charge on the Na(Ba) cations is balanced by the GaSe4- tetrahedra. For glasses with Na 2Se/BaSe:Ga2Se3 < 1, the addition of Se-deficient Ga2Se3 induces the formation of Ge-Ge bonds. However, for glasses with Na2Se/BaSe:Ga2Se3 > 1, the addition of Na2Se/BaSe results in the formation of non-bridging Se atoms, which break up the connectivity of the glassy network. The major difference between the modifying elements Na and Ba is that the high field strength of the Ba cation induces a higher degree of chemical disorder in the glass network. This conclusion is evidenced by the presence of some Ge-Ge bonds in BaSe--Ga2Se3--GeSe2 glasses even at the chemical threshold composition of BaSe:Ga2Se3 = 1. The structural duality of the Na2Se/BaSe--Ga2Se 3--GeSe2 system is best observed in the off-stoichiometric BaSe--Ga2Se3--GeSe2+/-Se glasses. Here, the removal of Se from a stoichiometric glass with BaSe:Ga2Se 3 > 1 results in Ge-Ge bonds, while its addition in excess of stoichiometry forms Se-Se bonds. Although such behavior is consistent with the continuously-alloyed structural model, it should be contrasted with the response of the network to the removal or addition of BaSe. In the latter case especially, the network responds with the formation of non-bridging Se atoms, which is reminiscent of the charge-compensated structural scenario. The aforementioned structural conclusions are supported by trends in physical properties. Of all the properties measured, the glass transition temperature Tg responds most predictably to changes in glass structure in the sense that the removal of heteropolar (Ga/Ge)-Se bonds from the glassy network consistently results in a decrease in Tg. Indeed, Tg is observed to be maximized around chemical threshold compositions that are expected to have a fully-connected network of (Ga/Ge)Se¬4 tetrahedra. The formation of homopolar Ge-Ge bonds causes Tg to drop by ~40--80 °C, while the formation of Se-Se and/or non-bridging Se causes Tg to decrease by at least 120 °C. Trends in density reflect both the packing efficiency of the structural units within the glassy network as well as the masses of the constituent elements, and are generally observed to increase or decrease monotonically. As a result, an increase in density is associated with: 1) the removal of inefficiently packed structural units such as edge-sharing tetrahedra, 2) the formation of efficiently packed units such as three-coordinated Se atoms, 3) the removal of lighter elements like Na, and 4) the addition of heavier elements like Ba. Optical band gap is related to the bonding character within the glassy network, and tends to decrease as the bonding character becomes increasingly metallic. Therefore, a decrease in optical band gap is observed with the formation of homopolar Ge-Ge bonds when Ga2Se3 is added to GeSe2. However, the stoichiometric BaSe--Ga2Se 3--GeSe2 glasses show an anomaly in this regard because optical band gap decreases with the addition of BaSe, and consequently the removal of Ge-Ge bonds. This observation was ascribed instead to the formation of Ba-Se bonds, which are associated with a lower bandgap compared to the (Ga/Ge)-Se bonds that they replace. Finally, there is no straightforward structural explanation for trends in fragility, because it is related to the number of structural configurations dynamically available to the supercooled liquid. In the binary Ga2Se3--GeSe2 glasses, the fragility tends to increase with the formation of homopolar Ge-Ge bonds, which is consistent with other chalcogenide systems in which fragility increases with the removal of heteropolar bonds within corner-sharing tetrahedra and pyramids. In the stoichiometric BaSe--Ga2Se3--GeSe2 glasses on the other hand, a shift in trend near the compositions where BaSe:Ga 2Se3 = 1 coincides with a structural shift between the formation of Ge-Ge bonds and Se-Se/non-bridging Se.

Germanium Nanocrystal Solar Cells

NASA Astrophysics Data System (ADS)

Holman, Zachary Charles

Greenhouse gas concentrations in the atmosphere are approaching historically unprecedented levels from burning fossil fuels to meet the ever-increasing world energy demand. A rapid transition to clean energy sources is necessary to avoid the potentially catastrophic consequences of global warming. The sun provides more than enough energy to power the world, and solar cells that convert sunlight to electricity are commercially available. However, the high cost and low efficiency of current solar cells prevent their widespread implementation, and grid parity is not anticipated to be reached for at least 15 years without breakthrough technologies. Semiconductor nanocrystals (NCs) show promise for cheap multi-junction photovoltaic devices. To compete with photovoltaic materials that are currently commercially available, NCs need to be inexpensively cast into dense thin films with bulk-like electrical mobilities and absorption spectra that can be tuned by altering the NC size. The Group II-VI and IV-VI NC communities have had some success in achieving this goal by drying and then chemically treating colloidal particles, but the more abundant and less toxic Group IV NCs have proven more challenging. This thesis reports thin films of plasma-synthesized Ge NCs deposited using three different techniques, and preliminary solar cells based on these films. Germanium tetrachloride is dissociated in the presence of hydrogen in a nonthermal plasma to nucleate Ge NCs. Transmission electron microscopy and X-ray diffraction indicate that the particles are nearly monodisperse (standard deviations of 10-15% the mean particle diameter) and the mean diameter can be tuned from 4-15 nm by changing the residence time of the Ge NCs in the plasma. In the first deposition scheme, a Ge NC colloid is formed by reacting nanocrystalline powder with 1-dodecene and dispersing the functionalized NCs in a solvent. Films are then formed on substrates by drop-casting the colloid and allowing it to dry. As-deposited films are electrically insulating due to the long hydrocarbon molecules separating neighboring particles; however, mass spectrometry shows that annealing treatments successfully decompose these molecules. After annealing at 250 °C, Ge NC films exhibit conductivities as large as 10-6 S/cm. In the second film deposition scheme, a Ge NC colloid is formed by dispersing Ge NCs in select solvents without further surface modification. While these "bare" NCs quickly agglomerate and flocculate in nearly all non-polar solvents, they remain stable in benzonitrile and 1,2-dichlorobenzene, among others. Thin-film field-effect transistors have been fabricated by spinning Ge NC colloids onto substrates and the films have been subjected to various annealing procedures. The devices show n-type, p -type, or ambipolar behavior depending on the annealing conditions, with Ge NC films annealed at 300°C exhibiting electron saturation mobilities greater than 10-2 cm2/Vs and on-to-off ratios of 104. The final film deposition scheme involves the impaction of Ge NCs onto substrates downstream of the synthesis plasma via acceleration of the NCs through an orifice. This technique produces highly uniform films with densities greater than 50% of the density of bulk Ge. By varying the size of the Ge NCs, we have measured films with band gaps ranging from the bulk value of 0.7 eV to over 1.1 eV for films of 4 nm Ge NCs. Having deposited dense thin films with tunable band gaps and respectable mobilities, we have begun fabricating bilayer solar cells consisting of heterojunctions between Ge NC films and P3HT, Si NCs, or Si wafers. Preliminary devices exhibit opencircuit voltages and short-circuit currents as large as 0.3 V and 4 mA/cm 2, respectively.

Nanocrystals embedded in hafnium dioxide-based dielectrics as charge storage nodes of nano-floating gate memory

NASA Astrophysics Data System (ADS)

Lee, Pui Fai

2007-12-01

Nanocrystals (NC) embedded in dielectrics have attracted a great deal of attention recently because they can potentially be applied in nonvolatile, high-speed, high-density and low-power memory devices. This device benefits from a relatively low operating voltage, high endurance, fast write-erase speeds and better immunity to soft errors. The nanocrystal materials suitable for such an application can be either metals or semiconductors. Recent studies have shown that high-k dielectrics, instead of SiO2 , for the tunneling layer in nanocrystal floating gate memory can improve the trade-off between data retention and program efficiency due to the unique band alignment of high-k dielectrics in the programming and retention modes. In this project, HfAlO has been selected as the high- k dielectric for the nanocrystal floating gate memory structure. The trilayer structure (HfAlO/Ge-NC/HfAlO) on Si was fabricated by PLD. Results revealed that relatively low substrate temperature and growth rate are favourable for the formation of smaller-size Ge nanocrystals. Effects of size/density of the Ge nanocrystal, the tunneling and control oxide layer thicknesses and the oxygen partial pressure during their growth on the charge storage and charge retention characteristics have also been studied. The island structure of the Ge nanocrystal suggests that the growth is based on the Volmer-Webber mode. The self-organized Ge nanocrystals so formed were uniform in size (5--20 nm diameter) and distribution with a density approaching 1012--1013cm-2. Flat-band voltage shift (DeltaVFB) of about 3.6 V and good retention property have been achieved. By varying aggregation distance, sputtering gas pressure and ionization power of the nanocluster source, nanoclusters of Ge with different sizes can be formed. The memory effect of the trilayer structure so formed with 10 nm Ge nanoclusters are manifested by the counter-clockwise hysteresis loop in the C-V curves and a maximum flat-band voltage shift of 5.0 V has been achieved. For comparison purposes, metal nanocrystals have also been investigated by utilizing both of the physical deposition methods as mentioned above. Silver (Ag) nanocrystals with size of 10--40 nm have been embedded in HfAlO matrix in the trilayer capacitor structure and a flat-band voltage shift of 2.0 V has been achieved.

SIAM Data Mining Brings It’ to Annual Meeting

DTIC Science & Technology

2017-02-24

address space) languages. Jose Moreira and Manoj Kumar from IBM presented the Graph Programming Interface (GPI) as well as a proposal for a common...Samsi (MIT), Dr. Manoj Kumar (IBM Research), Dr. Michel Kinsy (Boston University), and Dr. Shashank Yellapantula (GE Global Research). Dr. Gadepally...and Dr. Samsi discussed advances in data management technologies [22–25], and Dr. Kumar presented a brief overview of a graph-based API IBM is

Joint Services Electronics Program

DTIC Science & Technology

1991-07-01

Associates HgCdTe infrared detector for our earlier Ge:Cu detector . The samples studied were obtained from Professor J. Schetzina at North Carolina State...such delicate structures. Since such effects may well limit their utility in actual devices we have begun an investigation of noise processes in...superlattices 3 was initially motivated by practical interest in infrared detectors like HgTe/CdTe. The III-V superlattices (SLs) are being considered

Entanglement Length in Miscible Blends of cis-Polyisoprene and Poly(ptert-butylstyrene)

NASA Astrophysics Data System (ADS)

Watanabe, Hiroshi; Matsumiya, Yumi

In miscible polymer blends, the entanglement length is common for the components, but its changes with the composition w remain unclear. For this problem, this study analyzed viscoelastic data for miscible blends of cis-polyisoprene (PI) and poly(ptert-butylstyrene) (PtBS), considering the basic feature that the local relaxation is determined only by wPI. On the basis of this feature, a series of unentangled low- M PI/PtBS blends having various M and a given wPI were utilized as references for well-entangled high- M PI/PtBS blends having the same wPI, and the modulus data of the references were subtracted from the high- M blend data. For an optimally chosen reference, the storage modulus Ge'of the high- M blends obtained after the subtraction exhibited a clear entanglement plateau GN and the corresponding Ge' ' decreased in proportion to 1/ ω at high frequencies ω. Thus, the onset of entanglement relaxation was detected. The GN values were well described by a linear mixing rule of the entanglement length with the number fraction of Kuhn segments of the components being utilized as the averaging weight. This result, not explained by a mean-field picture of entanglement, is discussed in relation to local packing of bulky PtBS chains and skinny PI chains.

Ge/Si Ratios Record the Impact of Forest Conversion to Cropland on Soil Chemical Weathering Processes and Solutes Export to Rivers

NASA Astrophysics Data System (ADS)

Ameijeiras-Marino, Y.; Opfergelt, S.; Derry, L. A.; Robinet, J.; Delmelle, P.

2016-12-01

Soil weathering processes influence solute fluxes to rivers, playing a major role in global biogeochemical cycles. Land use change such as forest conversion to cropland enhances soil erosion, which mobilizes solutes and exposes new mineral surfaces to weathering processes, changing soil weathering degree. However, the impact of forest conversion to cropland on soil weathering degree and solute fluxes exported from soils to rivers remain poorly quantified. This study assesses the soil weathering degree and uses a geochemical tracer of weathering, Ge/Si ratio, to provide new insights on the impact of soil weathering processes under anthropogenic forcing on the transfer of solutes to rivers. A subtropical site was studied in Rio Grande do Sul (Brazil). This area is characterized by mean annual rainfall of 1800 mm, with strong rain events mobilizing high sediment load. A forested catchment is considered as the reference and compared to a catchment cultivated for the past 100 years (similar lithology and climate). Bedrock, soil, soil pore water and stream water (during base flow and rain events) samples were analysed for their chemical and mineralogical compositions and Ge/Si ratios (combined isotope dilution, HR-ICP-MS and hydride generation). Chemical and mineralogical analyses highlight that forest conversion to cropland decreases the soil weathering degree on steep slopes. Ge/Si ratios (μmol/mol) are comparable in bulk soils between the forested (2.33 ± 0.50) and the cultivated catchment (2.61 ± 0.62), but differ in soil pore waters between forest (0.47 ± 0.16) and culture (0.73 ± 0.15) indicating differences on soil weathering processes. The response of Ge/Si ratios in stream waters to a rain event differs between forest and culture, highlighting a larger contribution from soil pore waters to stream waters under culture. Altogether, our data support that land use history has an impact on the present day soil weathering processes and on the solute export to rivers.

From data to information: Tools and techniques educators can use to enhance Google Earth imagery with geographic information systems data and three dimensional models

NASA Astrophysics Data System (ADS)

Simms, M.

2007-12-01

As with any educational technology, moving beyond basic information delivery to dynamic use can be a challenge and Google Earth (GE) is no exception. Moving beyond annotated placemarks and pictures, educators can utilize free, free-to-educators, and low cost tools to develop learning experiences within GE to facilitate dynamic interaction with real world data in the form of three dimensional models (3D) and geographic information systems data (GIS). Students take an active role in knowledge construction through self-directed navigation in 3D, seeing features of the landscape not in snapshot views found in textbooks, but in situ and in context. By incorporating categorized data, such as what is commonly found in GIS, an added dimension of human interaction can be incorporated. For example, GIS layers such as landuse, soil type, etc. provide students with data tools for investigating the role their community plays in supporting migrating Monarch butterfly habitat. Functionality for changing the appearance of layers in GE facilitates interaction with geospatial data in a manner that creates a type of "visual" GIS and can serve as an advanced organizer for later use of more powerful GIS software. GE can also be used as a metaphor to create a new context for an otherwise abstract concept, for example, scaling 3D models of the sun and planets to the size of a well known football stadium and placing each planet at the corresponding scaled distances from that location. Photorealistic 3D models created using SketchUp and Anim8or may help students relate to an otherwise abstract concept of planetary size and distances. Finally, digital elevation models (DEM) draped with imagery not available in GE or with GIS data can be used to make topic-specific 3D models either used within GE or in a 3D model viewer embedded in a website or email. With a little instruction, students can quickly learn how to make their own models as well. Procedures and software to accomplish each of these examples will be demonstrated.

Search for resonances in diphoton events at $$\\sqrt{s}=13 $$ TeV with the ATLAS detector

DOE PAGES

Aaboud, M.; Aad, G.; Abbott, B.; ...

2016-09-01

Searches for new resonances decaying into two photons in the ATLAS experiment at the CERN Large Hadron Collider are described. The analysis is based on proton-proton collision data corresponding to an integrated luminosity of 3.2 fb –1 at √s = 13 TeV recorded in 2015. Two searches are performed, one targeted at a spin-2 particle of mass larger than 500 GeV, using Randall-Sundrum graviton states as a benchmark model, and one optimized for a spin-0 particle of mass larger than 200 GeV. Varying both the mass and the decay width, the most significant deviation from the background-only hypothesis is observedmore » at a diphoton invariant mass around 750 GeV with local significances of 3.8 and 3.9 standard deviations in the searches optimized for a spin-2 and spin-0 particle, respectively. The global significances are estimated to be 2.1 standard deviations for both analyses. As a result, the consistency between the data collected at 13 TeV and 8 TeV is also evaluated. Limits on the production cross section times branching ratio to two photons for the two resonance types are reported.« less

Self-organization in P_xGe_xSe_1-2x glasses^*

NASA Astrophysics Data System (ADS)

Chakravarty, Swapnajit; Georgiev, Daniel; Boolchand, Punit; Micoulaut, Matthieu

2003-03-01

Bulk glasses in the titled ternary, in the 0 < x < 0.26 composition range, are examined in MDSC and Raman scattering measurements. Both fresh and aged samples were studied. Bimodal endotherms are observed but only the high^T endotherm displays a reversing heat flow signal that represents a glass transition. The pre^_Tg endotherm is observed in quenched samples only, and represents an activation energy [1] associated with P4 units (Se^_P(Se_1/2)_3) converting to P3 (P(Se_1/2)_3) ones. T_g(x) accessed from the reversing heat flow are found to increase with x as a power^_law, displaying a cusp near x = 0.04. The non^_reversing enthalpy is found to display a global minimum in the 0.08 < x < 0.145 range identified with the self^_organized phase. Raman scattering reveals the isostatically rigid units ( P3 , P_4, CS and ES Ge(Se_1/2)_4) comprising building blocks of the self^_organized phase. These results are parallel to those encountered in the As^_Ge^_Se ternary [2,3]. ^*Supported by NSF grant DMR ^_01^_01808 1. D.G. Georgiev et al Phys. Rev. B 64,134204(2001) 2.Y. Wang et al Europhys. Lett. 52, 633 (2000) 3. T.Qu et al. companion abstract

Phase II Upgrade of the GERDA Experiment for the Search of Neutrinoless Double Beta Decay

NASA Astrophysics Data System (ADS)

Majorovits, B.

Observation of neutrinoless double beta decay could answer the question regarding the Majorana or Dirac nature of neutrinos. The GERDA experiment utilizes HPGe detectors enriched with the isotope 76Ge to search for this process. Recently the GERDA collaboration has unblinded data of Phase I of the experiment. In order to further improve the sensitivity of the experiment, additionally to the coaxial detectors used, 30 BEGe detectors made from germanium enriched in 76Ge will be deployed in GERDA Phase II. BEGe detectors have superior PSD capability, thus the background can be further reduced. The liquid argon surrounding the detector array will be instrumented in order to reject background by detecting scintillation light induced in the liquid argon by radiation. After a short introduction the hardware preparations for GERDA Phase II as well as the processing and characterization of the 30 BEGe detectors are discussed.

Utilization of the CS-30 cyclotron at the Duke University Medical Center

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wieland, B.W.; McKinney, C.J.; Dailey, M.F.

1994-12-31

Present routine radionuclide production includes {sup 18}F fluoride from protons on {sup 18}O water, {sup 13}N ammonia from protons on {sup 13}C slurry, {sup 15}O water from deuterons on nitrogen gas, and {sup 211}At from alphas on bismuth metal. Clinical PET using two tomographs (GE 4096 and Advance) is done Tuesday through Friday, typically 4 to 11 patients per day using {sup 15}O water, {sup 13}N ammonia, and {sup 18}F FDG synthesized with a GE Microlab. Clinical patient studies are 50% neurology using FDG, 45% body using FDG, and 5% cardiology using ammonia and FDG (oncology in these three areasmore » totals 60%). {sup 15}O water for clinical research patients (THC and cognitive) is produced twice a week. {sup 211}At is produced about twice a week for monoclonal antibody labelling.« less

Design and performance of the spin asymmetries of the nucleon experiment

NASA Astrophysics Data System (ADS)

Maxwell, J. D.; Armstrong, W. R.; Choi, S.; Jones, M. K.; Kang, H.; Liyanage, A.; Meziani, Z.-E.; Mulholland, J.; Ndukum, L.; Rondón, O. A.; Ahmidouch, A.; Albayrak, I.; Asaturyan, A.; Ates, O.; Baghdasaryan, H.; Boeglin, W.; Bosted, P.; Brash, E.; Brock, J.; Butuceanu, C.; Bychkov, M.; Carlin, C.; Carter, P.; Chen, C.; Chen, J.-P.; Christy, M. E.; Covrig, S.; Crabb, D.; Danagoulian, S.; Daniel, A.; Davidenko, A. M.; Davis, B.; Day, D.; Deconinck, W.; Deur, A.; Dunne, J.; Dutta, D.; El Fassi, L.; Elaasar, M.; Ellis, C.; Ent, R.; Flay, D.; Frlez, E.; Gaskell, D.; Geagla, O.; German, J.; Gilman, R.; Gogami, T.; Gomez, J.; Goncharenko, Y. M.; Hashimoto, O.; Higinbotham, D. W.; Horn, T.; Huber, G. M.; Jones, M.; Kalantarians, N.; Kang, H. K.; Kawama, D.; Keith, C.; Keppel, C.; Khandaker, M.; Kim, Y.; King, P. M.; Kohl, M.; Kovacs, K.; Kubarovsky, V.; Li, Y.; Liyanage, N.; Luo, W.; Mamyan, V.; Markowitz, P.; Maruta, T.; Meekins, D.; Melnik, Y. M.; Mkrtchyan, A.; Mkrtchyan, H.; Mochalov, V. V.; Monaghan, P.; Narayan, A.; Nakamura, S. N.; Nuruzzaman; Pentchev, L.; Pocanic, D.; Posik, M.; Puckett, A.; Qiu, X.; Reinhold, J.; Riordan, S.; Roche, J.; Sawatzky, B.; Shabestari, M.; Slifer, K.; Smith, G.; Soloviev, L.; Solvignon, P.; Tadevosyan, V.; Tang, L.; Vasiliev, A. N.; Veilleux, M.; Walton, T.; Wesselmann, F.; Wood, S. A.; Yao, H.; Ye, Z.; Zhu, L.

2018-03-01

The Spin Asymmetries of the Nucleon Experiment (SANE) performed inclusive, double-polarized electron scattering measurements of the proton at the Continuous Electron Beam Accelerator Facility at Jefferson Lab. A novel detector array observed scattered electrons of four-momentum transfer 2 . 5

Strain engineering in epitaxial Ge1- x Sn x : a path towards low-defect and high Sn-content layers

NASA Astrophysics Data System (ADS)

Margetis, Joe; Yu, Shui-Qing; Bhargava, Nupur; Li, Baohua; Du, Wei; Tolle, John

2017-12-01

The plastic strain relaxation of CVD-grown Ge1-x Sn x layers was investigated in x = 0.09 samples with thicknesses of 152, 180, 257, 570, and 865 nm. X-ray diffraction-reciprocal space mapping was used to determine the strain, composition, and the nature of defects in each layer. Secondary ion mass spectrometry was used to examine the evolution of the compositional profile. These results indicate that growth beyond the critical thickness results in the spontaneous formation of a relaxed and highly defective 9% Sn layer followed by a low defect 12% Sn secondary layer. We find that this growth method can be used to engineer thick, strain-relaxed, and low defect density layers. Furthermore we utilize this strain-dependent Sn incorporation behavior to achieve Sn compositions of 17.5%. Photoluminesence of these layers produces light emission at 3.1 μm.

Electroexcitation of nucleon resonances of the [ 70 , 1 - ] multiplet in a light-front relativistic quark model

DOE PAGES

Aznauryan, I. G.; Burkert, V. D.

2017-06-13

We utilize the light-front relativistic quark model to predict the 3q core contribution to the electroexcitation of nucleon resonances of the [70,1 –] multiplet on the proton and neutron at Q 2 < 5 GeV 2. The investigation is motivated by new experimental data from continuous electron beam accelerator facility large acceptance spectrometer on meson electroproduction for a wide range of the hadronic invariant mass including the full third nucleon resonance region up to √s = 1.8 GeV. For the states N(1520)3/2 –, N(1535)1/2 –, and N(1675)5/2 –, experimental results on the electroexcitation amplitudes on the proton are available formore » a wide range of Q 2. Lastly, this allowed us also to quantify the expected meson-baryon contributions to these amplitudes as a function of Q 2.« less

Strongly Enhanced THz Emission caused by Localized Surface Charges in Semiconducting Germanium Nanowires

PubMed Central

Lee, Woo-Jung; Ma, Jin Won; Bae, Jung Min; Jeong, Kwang-Sik; Cho, Mann-Ho; Kang, Chul; Wi, Jung-Sub

2013-01-01

A principal cause of THz emission in semiconductor nanostructures is deeply involved with geometry, which stimulates the utilization of indirect bandgap semiconductors for THz applications. To date, applications for optoelectronic devices, such as emitters and detectors, using THz radiation have focused only on direct bandgap materials. This paper reports the first observation of strongly enhanced THz emission from Germanium nanowires (Ge NWs). The origin of THz generation from Ge NWs can be interpreted using two terms: high photoexcited electron-hole carriers (Δn) and strong built-in electric field (Eb) at the wire surface based on the relation . The first is related to the extensive surface area needed to trigger an irradiated photon due to high aspect ratio. The second corresponds to the variation of Fermi-level determined by confined surface charges. Moreover, the carrier dynamics of optically excited electrons and holes give rise to phonon emission according to the THz region. PMID:23760467

Effects of patterning induced stress relaxation in strained SOI/SiGe layers and substrate

NASA Astrophysics Data System (ADS)

Hermann, P.; Hecker, M.; Renn, F.; Rölke, M.; Kolanek, K.; Rinderknecht, J.; Eng, L. M.

2011-06-01

Local stress fields in strained silicon structures important for CMOS technology are essentially related to size effects and properties of involved materials. In the present investigation, Raman spectroscopy was utilized to analyze the stress distribution within strained silicon (sSi) and silicon-germanium (SiGe) island structures. As a result of the structuring of initially unpatterned strained films, a size-dependent relaxation of the intrinsic film stresses was obtained in agreement with model calculations. This changed stress state in the features also results in the appearance of opposing stresses in the substrate underneath the islands. Even for strained island structures on top of silicon-on-insulator (SOI) wafers, corresponding stresses in the silicon substrate underneath the oxide were detected. Within structures, the stress relaxation is more pronounced for islands on SOI substrates as compared to those on bulk silicon substrates.

Electroexcitation of nucleon resonances of the [70 ,1-] multiplet in a light-front relativistic quark model

NASA Astrophysics Data System (ADS)

Aznauryan, I. G.; Burkert, V. D.

2017-06-01

We utilize the light-front relativistic quark model to predict the 3 q core contribution to the electroexcitation of nucleon resonances of the [70 ,1-] multiplet on the proton and neutron at Q2<5 GeV2 . The investigation is motivated by new experimental data from continuous electron beam accelerator facility large acceptance spectrometer on meson electroproduction for a wide range of the hadronic invariant mass including the full third nucleon resonance region up to √{s }=1.8 GeV. For the states N (1520 ) 3/2-,N (1535 ) 1/2- , and N (1675 ) 5/2- , experimental results on the electroexcitation amplitudes on the proton are available for a wide range of Q2. This allowed us also to quantify the expected meson-baryon contributions to these amplitudes as a function of Q2.

An instrument to measure the spectrum of cosmic ray iron and other nuclei to above 100 GeV-nucleon

NASA Technical Reports Server (NTRS)

Arens, J. F.; Balasubrahmanyan, V. K.; Ormes, J. F.; Siohan, F.; Schmidt, W. K. H.; Simon, M.; Spiegelhauer, H.

1978-01-01

A balloon-borne detector system for extending the study of cosmic ray composition to the energy region beyond 100 GeV/nucleon is described. The instrument incorporates an ionization calorimeter and a gas Cherenkov counter filled with freon for the determination of energies, and a charge module, consisting of scintillation and a lucite Cherenkov counter, for determining the charge of the incoming particle. The scintillators were utilized to determine the position of the incoming particle in addition to its charge. The characteristics of these detectors with respect to resolution, and the methods employed in laboratory calibration, cross-checks with flight data and actual performance in the flights are described in detail. Monte Carlo simulation of the ionization calorimeter and comparison of the response of the calorimeter and gas Cherenkov counter for complex nuclei was used to convert the observed calorimeter signal to absolute energy in a consistent manner.

The anomalous U(1)_{anom} symmetry and flavors from an SU(5) × SU(5)' GUT in Z_{12-I} orbifold compactification

NASA Astrophysics Data System (ADS)

Kim, Jihn E.; Kyae, Bumseok; Nam, Soonkeon

2017-12-01

In string compactifications, frequently the anomalous U(1) gauge symmetry appears which belongs to E_8 × E_8' of the heterotic string. This anomalous U(1) gauge boson obtains mass at the compactification scale (≈ 10^{18 } {GeV}) by absorbing one pseudoscalar (corresponding to the model-independent axion) from the second rank antisymmetric tensor field B_{MN}. Below the compactification scale a global symmetry U(1)_{anom} results whose charge Q_anom is the original gauge U(1) charge. This is the most natural global symmetry, realizing the "invisible" axion. This global symmetry U(1)_{anom} is suitable for a flavor symmetry. In the simplest compactification model with the flipped SU(5) grand unification, all the low energy parameters are calculated in terms of the vacuum expectation values of the standard model singlets.

Global solutions in higher dimensions to a fourth-order parabolic equation modeling epitaxial thin-film growth

NASA Astrophysics Data System (ADS)

Winkler, Michael

2011-08-01

The initial-value problem for u_t=-Δ^2 u - μΔ u - λ Δ |nabla u|^2 + f(x)qquad qquad (star) is studied under the conditions {{partial/partialν} u={partial/partialν} Δ u=0} on the boundary of a bounded convex domain {Ω subset {{R}}^n} with smooth boundary. This problem arises in the modeling of the evolution of a thin surface when exposed to molecular beam epitaxy. Correspondingly the physically most relevant spatial setting is obtained when n = 2, but previous mathematical results appear to concentrate on the case n = 1. In this work, it is proved that when n ≤ 3, μ ≥ 0, λ > 0 and {f in L^infty(Ω)} satisfies {{int_Ω} f ge 0}, for each prescribed initial distribution {u_0 in L^infty(Ω)} fulfilling {{int_Ω} u_0 ge 0}, there exists at least one global weak solution {u in L^2_{loc}([0,infty); W^{1,2}(Ω))} satisfying {{int_Ω} u(\\cdot,t) ge 0} for a.e. t > 0, and moreover, it is shown that this solution can be obtained through a Rothe-type approximation scheme. Furthermore, under an additional smallness condition on μ and {\\|f\\|_{L^infty(Ω)}}, it is shown that there exists a bounded set {Ssubset L^1(Ω)} which is absorbing for {(star)} in the sense that for any such solution, we can pick T > 0 such that {e^{2λ u(\\cdot,t)}in S} for all t > T, provided that Ω is a ball and u 0 and f are radially symmetric with respect to x = 0. This partially extends similar absorption results known in the spatially one-dimensional case. The techniques applied to derive appropriate compactness properties via a priori estimates include straightforward testing procedures which lead to integral inequalities involving, for instance, the functional {{int_Ω} e^{2λ u}dx}, but also the use of a maximum principle for second-order elliptic equations.

Global integration of the hot-state brain network of appetite predicts short term weight loss in older adult.

PubMed

Paolini, Brielle M; Laurienti, Paul J; Simpson, Sean L; Burdette, Jonathan H; Lyday, Robert G; Rejeski, W Jack

2015-01-01

Obesity is a public health crisis in North America. While lifestyle interventions for weight loss (WL) remain popular, the rate of success is highly variable. Clearly, self-regulation of eating behavior is a challenge and patterns of activity across the brain may be an important determinant of success. The current study prospectively examined whether integration across the Hot-State Brain Network of Appetite (HBN-A) predicts WL after 6-months of treatment in older adults. Our metric for network integration was global efficiency (GE). The present work is a sub-study (n = 56) of an ongoing randomized clinical trial involving WL. Imaging involved a baseline food-cue visualization functional MRI (fMRI) scan following an overnight fast. Using graph theory to build functional brain networks, we demonstrated that regions of the HBN-A (insula, anterior cingulate cortex (ACC), superior temporal pole (STP), amygdala and the parahippocampal gyrus) were highly integrated as evidenced by the results of a principal component analysis (PCA). After accounting for known correlates of WL (baseline weight, age, sex, and self-regulatory efficacy) and treatment condition, which together contributed 36.9% of the variance in WL, greater GE in the HBN-A was associated with an additional 19% of the variance. The ACC of the HBN-A was the primary driver of this effect, accounting for 14.5% of the variance in WL when entered in a stepwise regression following the covariates, p = 0.0001. The HBN-A is comprised of limbic regions important in the processing of emotions and visceral sensations and the ACC is key for translating such processing into behavioral consequences. The improved integration of these regions may enhance awareness of body and emotional states leading to more successful self-regulation and to greater WL. This is the first study among older adults to prospectively demonstrate that, following an overnight fast, GE of the HBN-A during a food visualization task is predictive of WL.

An overview of metals recovery from thermal power plant solid wastes.

PubMed

Meawad, Amr S; Bojinova, Darinka Y; Pelovski, Yoncho G

2010-12-01

Thermal power plants (TPPs) that burn fossil fuels emit several pollutants linked to the environmental problems of acid rain, urban ozone, and the possibility of global climate change. As coal is burned in a power plant, its noncombustible mineral content is partitioned into bottom ash, which remains in the furnace, and fly ash, which rises with flue gases. Two other by-products of coal combustion air-pollution control technologies are flue gas desulfurization (FGD) wastes and fluidized-bed combustion (FBC) wastes. This paper analyzed and summarized the generation, characteristics and application of TPP solid wastes and discussed the potential effects of such solid wastes on the environment. On this basis, a review of a number of methods for recovery of metals from TPP solid wastes was made. They usually contain a quantity of valuable metals and they are actually a secondary resource of metals. By applying mineral processing technologies and hydrometallurgical and biohydrometallurgical processes, it is possible to recover metals such as Al, Ga, Ge, Ca, Cd, Fe, Hg, Mg, Na, Ni, Pb, Ra, Th, V, Zn, etc., from TPP solid wastes. Recovery of metals from such wastes and its utilization are important not only for saving metal resources, but also for protecting the environment. Copyright © 2010 Elsevier Ltd. All rights reserved.

Nutrient Digestibility and Metabolizable Energy Content of Mucuna pruriens Whole Pods Fed to Growing Pelibuey Lambs.

PubMed

Loyra-Tzab, Enrique; Sarmiento-Franco, Luis Armando; Sandoval-Castro, Carlos Alfredo; Santos-Ricalde, Ronald Herve

2013-07-01

The nutrient digestibility, nitrogen balance and in vivo metabolizable energy supply of Mucuna pruriens whole pods fed to growing Pelibuey lambs was investigated. Eight Pelibuey sheep housed in metabolic crates were fed increasing levels of Mucuna pruriens pods: 0 (control), 100 (Mucuna100), 200 (Mucuna200) and 300 (Mucuna300) g/kg dry matter. A quadratic (p<0.002) effect was observed for dry matter (DM), neutral detergent fibre (aNDF), nitrogen (N) and gross energy (GE) intakes with higher intakes in the Mucuna100 and Mucuna200 treatments. Increasing M. pruriens in the diets had no effect (p>0.05) on DM and GE apparent digestibility (p<0.05). A linear reduction in N digestibility and N retention was observed with increasing mucuna pod level. This effect was accompanied by a quadratic effect (p<0.05) on fecal-N and N-balance which were higher in the Mucuna100 and Mucuna200 treatments. Urine-N excretion, GE retention and dietary estimated nutrient supply (metabolizable protein and metabolizable energy) were not affected (p>0.05). DM, N and GE apparent digestibility coefficient of M. pruriens whole pods obtained through multiple regression equations were 0.692, 0.457, 0.654 respectively. In vivo DE and ME content of mucuna whole pod were estimated in 11.0 and 9.7 MJ/kg DM. It was concluded that whole pods from M. pruriens did not affect nutrient utilization when included in an mixed diet up to 200 g/kg DM. This is the first in vivo estimation of mucuna whole pod ME value for ruminants.

Theoretical potential for low energy consumption phase change memory utilizing electrostatically-induced structural phase transitions in 2D materials

NASA Astrophysics Data System (ADS)

Rehn, Daniel A.; Li, Yao; Pop, Eric; Reed, Evan J.

2018-01-01

Structural phase-change materials are of great importance for applications in information storage devices. Thermally driven structural phase transitions are employed in phase-change memory to achieve lower programming voltages and potentially lower energy consumption than mainstream nonvolatile memory technologies. However, the waste heat generated by such thermal mechanisms is often not optimized, and could present a limiting factor to widespread use. The potential for electrostatically driven structural phase transitions has recently been predicted and subsequently reported in some two-dimensional materials, providing an athermal mechanism to dynamically control properties of these materials in a nonvolatile fashion while achieving potentially lower energy consumption. In this work, we employ DFT-based calculations to make theoretical comparisons of the energy required to drive electrostatically-induced and thermally-induced phase transitions. Determining theoretical limits in monolayer MoTe2 and thin films of Ge2Sb2Te5, we find that the energy consumption per unit volume of the electrostatically driven phase transition in monolayer MoTe2 at room temperature is 9% of the adiabatic lower limit of the thermally driven phase transition in Ge2Sb2Te5. Furthermore, experimentally reported phase change energy consumption of Ge2Sb2Te5 is 100-10,000 times larger than the adiabatic lower limit due to waste heat flow out of the material, leaving the possibility for energy consumption in monolayer MoTe2-based devices to be orders of magnitude smaller than Ge2Sb2Te5-based devices.

The Impact of Global Budgets on Pharmaceutical Spending and Utilization

PubMed Central

Fendrick, A. Mark; Song, Zirui; Landon, Bruce E.; Safran, Dana Gelb; Mechanic, Robert E.; Chernew, Michael E.

2014-01-01

In 2009, Blue Cross Blue Shield of Massachusetts implemented a global budget-based payment system, the Alternative Quality Contract (AQC), in which provider groups assumed accountability for spending. We investigate the impact of global budgets on the utilization of prescription drugs and related expenditures. Our analyses indicate no statistically significant evidence that the AQC reduced the use of drugs. Although the impact may change over time, early evidence suggests that it is premature to conclude that global budget systems may reduce access to medications. PMID:25500751

Precision Positioning and Inertial Guidance Sensors. Technology and Operational Aspects

DTIC Science & Technology

1981-03-01

Ueberlingen, GE EVALUATION D’UN SYSTEME EUROPEEN DE NAVIGATION HYBRIDE A - - GYROLASER POUR HELICOPTERE: "SEXTAN" by D Regnault, Centre d’Essais en Vol de...NAVIGATION SYSTEM AND STANDARD STATE ELEMENT DEVIATIONMEASUREMENT SOURCES( Dead-reckoning with position fxP fy 5000 En ]TAS, heading and wind scale...Reproduction Ltd ilarford House. 7-9 Charlotte St. London. WIP JIHD [i Ii THEME A new class of precision positioning systems , including GPS (Global

Large-scale production of (GeTe) x (AgSbTe 2) 100$-$x (x=75, 80, 85, 90) with enhanced thermoelectric properties via gas-atomization and spark plasma sintering

DOE PAGES

Kim, Hyo-Seob; Ames Lab., Ames, IA; Dharmaiah, Peyala; ...

2017-01-30

(GeTe) x(AgSbTe 2) 100$-$x: TAGS thermoelectrics are an attractive class of materials due to their combination of non-toxicity and good conversion efficiency at mid-temperature ranges. Here in the present work, we have utilized energy and time efficient high-pressure gas atomization and spark-plasma sintering techniques for large-scale preparation of samples with varying composition (i.e., (GeTe) x(AgSbTe 2) 100$-$x where x = 75, 80, 85, and 90). High-temperature x-ray diffraction was used to understand the phase transformation mechanism of the as-atomized powders. Detailed high-resolution transmission electron microscopy of the sintered samples revealed the presence of nanoscale precipitates, antiphase, and twin boundaries. Themore » nanoscale twins and antiphase boundaries serve as phonon scattering centers, leading to the reduction of total thermal conductivity in TAGS-80 and 90 samples. The maximum ZT obtained was 1.56 at 623 K for TAGS-90, which was ~94% improvement compared to values previously reported. The presence of the twin boundaries also resulted in a high fracture toughness (K IC) of the TAGS-90 sample due to inhibition of dislocation movement at the twin boundary.« less

Construction and performance of a silicon photomultiplier/extruded scintillator tail-catcher and muon-tracker

NASA Astrophysics Data System (ADS)

Adloff, C.; Blaha, J.; Blaising, J.-J.; Drancourt, C.; Espargilière, A.; Gaglione, R.; Geffroy, N.; Karyotakis, Y.; Prast, J.; Vouters, G.; Bilki, B.; Francis, K.; Repond, J.; Smith, J.; Xia, L.; Baldolemar, E.; Li, J.; Park, S. T.; Sosebee, M.; White, A. P.; Yu, J.; Buanes, T.; Eigen, G.; Mikami, Y.; Watson, N. K.; Mavromanolakis, G.; Thomson, M. A.; Ward, D. R.; Yan, W.; Benchekroun, D.; Hoummada, A.; Khoulaki, Y.; Benyamna, M.; Cârloganu, C.; Fehr, F.; Gay, P.; Manen, S.; Royer, L.; Blazey, G. C.; Boona, S.; Chakraborty, D.; Dyshkant, A.; Hedin, D.; Lima, J. G. R.; Powell, J.; Rykalin, V.; Scurti, N.; Smith, M.; Tran, N.; Zutshi, V.; Hostachy, J.-Y.; Morin, L.; Cornett, U.; David, D.; Dietrich, J.; Falley, G.; Gadow, K.; Göttlicher, P.; Günter, C.; Hermberg, B.; Karstensen, S.; Krivan, F.; Lucaci-Timoce, A.-I.; Lu, S.; Lutz, B.; Marchesini, I.; Morozov, S.; Morgunov, V.; Reinecke, M.; Sefkow, F.; Smirnov, P.; Terwort, M.; Vargas-Trevino, A.; Feege, N.; Garutti, E.; Eckert, P.; Kaplan, A.; Schultz-Coulon, H.-Ch; Shen, W.; Stamen, R.; Tadday, A.; Norbeck, E.; Onel, Y.; Wilson, G. W.; Kawagoe, K.; Uozumi, S.; Dauncey, P. D.; Magnan, A.-M.; Bartsch, V.; Wing, M.; Salvatore, F.; Calvo Alamillo, E.; Fouz, M.-C.; Puerta-Pelayo, J.; Bobchenko, B.; Chadeeva, M.; Danilov, M.; Epifantsev, A.; Markin, O.; Mizuk, R.; Novikov, E.; Rusinov, V.; Tarkovsky, E.; Kirikova, N.; Kozlov, V.; Soloviev, Y.; Buzhan, P.; Dolgoshein, B.; Ilyin, A.; Kantserov, V.; Kaplin, V.; Karakash, A.; Popova, E.; Smirnov, S.; Frey, A.; Kiesling, C.; Seidel, K.; Simon, F.; Soldner, C.; Weuste, L.; Bonis, J.; Bouquet, B.; Callier, S.; Cornebise, P.; Doublet, Ph; Dulucq, F.; Faucci Giannelli, M.; Fleury, J.; Li, H.; Martin-Chassard, G.; Richard, F.; de la Taille, Ch; Pöschl, R.; Raux, L.; Seguin-Moreau, N.; Wicek, F.; Anduze, M.; Boudry, V.; Brient, J.-C.; Jeans, D.; Mora de Freitas, P.; Musat, G.; Reinhard, M.; Ruan, M.; Videau, H.; Bulanek, B.; Zacek, J.; Cvach, J.; Gallus, P.; Havranek, M.; Janata, M.; Kvasnicka, J.; Lednicky, D.; Marcisovsky, M.; Polak, I.; Popule, J.; Tomasek, L.; Tomasek, M.; Ruzicka, P.; Sicho, P.; Smolik, J.; Vrba, V.; Zalesak, J.; Belhorma, B.; Ghazlane, H.; Takeshita, T.

2012-04-01

A prototype module for an International Linear Collider (ILC) detector was built, installed, and tested between 2006 and 2009 at CERN and Fermilab as part of the CALICE test beam program, in order to study the possibilities of extending energy sampling behind a hadronic calorimeter and to study the possibilities of providing muon tracking. The ``tail catcher/muon tracker'' (TCMT) is composed of 320 extruded scintillator strips (dimensions 1000 × 50 × 5 mm3) packaged in 16 one-meter square planes interleaved between steel plates. The scintillator strips were read out with wavelength shifting fibers and silicon photomultipliers. The planes were arranged with alternating horizontal and vertical strip orientations. Data were collected for muons and pions in the energy range 6 GeV to 80 GeV. Utilizing data taken in 2006, this paper describes the design and construction of the TCMT, performance characteristics, and a beam-based evaluation of the ability of the TCMT to improve hadronic energy resolution in a prototype ILC detector. For a typical configuration of an ILC detector with a coil situated outside a calorimeter system with a thickness of 5.5 nuclear interaction lengths, a TCMT would improve relative energy resolution by 6-16% for pions between 20 and 80 GeV.

Measurement of D 0 Azimuthal Anisotropy at Midrapidity in Au + Au Collisions at s N N = 200 GeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Adamczyk, L.; Adkins, J. K.; Agakishiev, G.

In this paper, we report the first measurement of the elliptic anisotropy (v2) of the charm meson D 0 at midrapidity (|y| < 1) in Au + Au collisions atmore » $$\\sqrt{s}$$$_ {NN}$$ = 200 GeV. The measurement was conducted by the STAR experiment at RHIC utilizing a new high-resolution silicon tracker. The measured D 0 v 2 in 0%–80% centrality Au + Au collisions can be described by a viscous hydrodynamic calculation for a transverse momentum (p T) of less than 4 GeV/c . The D 0 v 2 as a function of transverse kinetic energy (m T - m 0 , where m T = $$\\sqrt{p}$$$2\\atop{T}$$ + m$$2\\atop{0}$$) is consistent with that of light mesons in 10%–40% centrality Au + Au collisions. These results suggest that charm quarks have achieved local thermal equilibrium with the medium created in such collisions. In conclusion, several theoretical models, with the temperature-dependent, dimensionless charm spatial diffusion coefficient (2πTD s) in the range of ~2–12 , are able to simultaneously reproduce our D 0 v 2 result and our previously published results for the D 0 nuclear modification factor.« less

Aktiv De-Orbiting Onboard System from Leo of Upper Stages of Launchers

NASA Astrophysics Data System (ADS)

Trushlyakov, V.; Shalay, V.; Shatrov, J.; Jakovlev, M.; Kostantino, A.

2009-03-01

The active de-orbiting onboard system (VDOS) of upper separable parts (USP) stage of launchers from LEO into orbits of utilization with term of existence orbital lifetimes till 25 years is offered. ADOS it is based on use of power resources of not produced rests of liquid fuel onboard USP launchers with liquid propulsion module (LPM). Following systems enter in structure VDOS: the gas jet propulsion system consisting of a system of gasification, chambers of gas engines (GE), a control system. For gasification of the rests of liquid fuel the heat-carrier received in the autonomous gas generator is used. The gasification propellant components from each tank with temperature and the pressure determined by strength of the corresponding tank, move in chambers of the GE established on a top of a fuel compartment. After separation of a payload execute twist USP for preservation of its position in the space by activity of the GE. Ways of increase of a system effectiveness of gasification are offered by superposition on the entered heat-carrier of ultrasonic oscillations, and also introduction in gaseous fuel nanopowder of aluminum. The volume of adaptations of construction USP, connected with introduction VDOS does not exceed 5 % from weight of a dry construction.

Positronium production in cryogenic environments

NASA Astrophysics Data System (ADS)

Cooper, B. S.; Alonso, A. M.; Deller, A.; Liszkay, L.; Cassidy, D. B.

2016-03-01

We report measurements of positronium (Ps) formation following positron irradiation of mesoporous SiO2 films and Ge(100) single crystals at temperatures ranging from 12-700 K. As both of these materials generate Ps atoms via nonthermal processes, they are able to function as positron-positronium converters at cryogenic temperatures. Our data show that such Ps formation is possibly provided the targets are not compromised by adsorption of residual gas. In the case of SiO2 films, we observe a strong reduction in the Ps formation efficiency following irradiation with UV laser light (λ =243.01 nm) below 250 K, in accordance with previous observations of radiation-induced surface paramagnetic centers. Conversely, Ps emission from Ge is enhanced by irradiation with visible laser light (λ =532 nm) via a photoemission process that persists at cryogenic temperatures. Both mesoporous SiO2 films and Ge crystals were found to produce Ps efficiently in cryogenic environments. Accordingly, these materials are likely to prove useful in several areas of research, including Ps mediated antihydrogen formation conducted in the cold bore of a superconducting magnet, the production of Rydberg Ps for experiments in which the effects of black-body radiation must be minimized, and the utilization of mesoporous structures that have been modified to produce cold Ps atoms.

A Geant Study of the Scintillating Optical Fiber (SOFCAL) Cosmic Ray Detector

NASA Technical Reports Server (NTRS)

Munroe, Ray B., Jr.

1998-01-01

Recent energy measurements by balloon-borne passive emulsion chambers indicate that the flux ratios of protons to helium nuclei and of protons to all heavy nuclei decrease as the primary cosmic ray energy per nucleon increases above approx. 200 GeV/n, and suggest a "break" in the proton spectrum between 200 GeV and 5 TeV. However, these passive emulsion chambers are limited to a lower energy threshold of approx. 5 TeV/n, and cannot fully explore this energy regime. Because cosmic ray flux and composition details may be significant to acceleration models, a hybrid detector system called the Scintillating Optical Fiber Calorimeter (SOFCAL) has been designed and flown. SOFCAL incorporates both conventional passive emulsion chambers and an active calorimeter utilizing scintillating plastic fibers as detectors. These complementary types of detectors allow the balloon-borne SOFCAL experiment to measure the proton and helium spectra from approx. 400 GeV/n to approx. 20 TeV. The fundamental purpose of this study is to use the GEANT simulation package to model the hadronic and electromagnetic shower evolution of cosmic rays incident on the SOFCAL detector. This allows the interpretation of SOFCAL data in terms of charges and primary energies of cosmic rays, thus allowing the determinations of cosmic ray flux and composition as functions of primary energy.

Measurement of D 0 Azimuthal Anisotropy at Midrapidity in Au + Au Collisions at s N N = 200 GeV

DOE PAGES

Adamczyk, L.; Adkins, J. K.; Agakishiev, G.; ...

2017-05-26

In this paper, we report the first measurement of the elliptic anisotropy (v2) of the charm meson D 0 at midrapidity (|y| < 1) in Au + Au collisions atmore » $$\\sqrt{s}$$$_ {NN}$$ = 200 GeV. The measurement was conducted by the STAR experiment at RHIC utilizing a new high-resolution silicon tracker. The measured D 0 v 2 in 0%–80% centrality Au + Au collisions can be described by a viscous hydrodynamic calculation for a transverse momentum (p T) of less than 4 GeV/c . The D 0 v 2 as a function of transverse kinetic energy (m T - m 0 , where m T = $$\\sqrt{p}$$$2\\atop{T}$$ + m$$2\\atop{0}$$) is consistent with that of light mesons in 10%–40% centrality Au + Au collisions. These results suggest that charm quarks have achieved local thermal equilibrium with the medium created in such collisions. In conclusion, several theoretical models, with the temperature-dependent, dimensionless charm spatial diffusion coefficient (2πTD s) in the range of ~2–12 , are able to simultaneously reproduce our D 0 v 2 result and our previously published results for the D 0 nuclear modification factor.« less

FUEL-FLEXIBLE GASIFICATION-COMBUSTION TECHNOLOGY FOR PRODUCTION OF H2 AND SEQUESTRATION-READY CO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

George Rizeq; Janice West; Arnaldo Frydman

It is expected that in the 21st century the Nation will continue to rely on fossil fuels for electricity, transportation, and chemicals. It will be necessary to improve both the thermodynamic efficiency and environmental impact performance of fossil fuel utilization. GE Energy and Environmental Research Corporation (GE EER) has developed an innovative fuel-flexible Advanced Gasification-Combustion (AGC) concept to produce H{sub 2} and sequestration-ready CO{sub 2} from solid fuels. The AGC module offers potential for reduced cost and increased energy efficiency relative to conventional gasification and combustion systems. GE EER was awarded a Vision 21 program from U.S. DOE NETL tomore » develop the AGC technology. Work on this three-year program started on October 1, 2000. The project team includes GE EER, California Energy Commission, Southern Illinois University at Carbondale, and T. R. Miles, Technical Consultants, Inc. In the AGC technology, coal/opportunity fuels and air are simultaneously converted into separate streams of (1) pure hydrogen that can be utilized in fuel cells, (2) sequestration-ready CO{sub 2}, and (3) high temperature/pressure oxygen-depleted air to produce electricity in a gas turbine. The process produces near-zero emissions and, based on preliminary modeling work, has an estimated process efficiency of approximately 67% based on electrical and H{sub 2} energy outputs relative to the higher heating value of coal. The three-year R&D program will determine the operating conditions that maximize separation of CO{sub 2} and pollutants from the vent gas, while simultaneously maximizing coal conversion efficiency and hydrogen production. The program integrates lab-, bench- and pilot-scale studies to demonstrate the AGC concept. This is the second annual technical progress report for the Vision 21 AGC program supported by U.S. DOE NETL (Contract No. DE-FC26-00FT40974). This report summarizes program accomplishments for the period starting October 1, 2001 and ending September 30, 2002. The report includes an introduction summarizing the AGC concept, main program tasks, and program objectives; it also provides a summary of program activities and accomplishments covering progress in tasks including lab- and bench-scale experimental testing, pilot-scale design and assembly, and program management.« less

Application of the EVEX resource to event extraction and network construction: Shared Task entry and result analysis

PubMed Central

2015-01-01

Background Modern methods for mining biomolecular interactions from literature typically make predictions based solely on the immediate textual context, in effect a single sentence. No prior work has been published on extending this context to the information automatically gathered from the whole biomedical literature. Thus, our motivation for this study is to explore whether mutually supporting evidence, aggregated across several documents can be utilized to improve the performance of the state-of-the-art event extraction systems. In this paper, we describe our participation in the latest BioNLP Shared Task using the large-scale text mining resource EVEX. We participated in the Genia Event Extraction (GE) and Gene Regulation Network (GRN) tasks with two separate systems. In the GE task, we implemented a re-ranking approach to improve the precision of an existing event extraction system, incorporating features from the EVEX resource. In the GRN task, our system relied solely on the EVEX resource and utilized a rule-based conversion algorithm between the EVEX and GRN formats. Results In the GE task, our re-ranking approach led to a modest performance increase and resulted in the first rank of the official Shared Task results with 50.97% F-score. Additionally, in this paper we explore and evaluate the usage of distributed vector representations for this challenge. In the GRN task, we ranked fifth in the official results with a strict/relaxed SER score of 0.92/0.81 respectively. To try and improve upon these results, we have implemented a novel machine learning based conversion system and benchmarked its performance against the original rule-based system. Conclusions For the GRN task, we were able to produce a gene regulatory network from the EVEX data, warranting the use of such generic large-scale text mining data in network biology settings. A detailed performance and error analysis provides more insight into the relatively low recall rates. In the GE task we demonstrate that both the re-ranking approach and the word vectors can provide slight performance improvement. A manual evaluation of the re-ranking results pinpoints some of the challenges faced in applying large-scale text mining knowledge to event extraction. PMID:26551766

First Monte Carlo Global Analysis of Nucleon Transversity with Lattice QCD Constraints

DOE PAGES

Lin, Huey-Wen; Melnitchouk, Wally; Prokudin, Alexei; ...

2018-04-11

We report on the first global QCD analysis of the quark transversity distributions in the nucleon from semi-inclusive deep-inelastic scattering (SIDIS), using a new Monte Carlo method based on nested sampling and constraints on the isovector tensor chargemore » $$g_T$$ from lattice QCD. A simultaneous fit to the available SIDIS Collins asymmetry data is compatible with $$g_T$$ values extracted from a comprehensive reanalysis of existing lattice simulations, in contrast to previous analyses, which found significantly smaller $$g_T$$ values. The contributions to the nucleon tensor charge from $u$ and $d$ quarks are found to be $$\\delta u = 0.3(2)$$ and $$\\delta d = -0.7(2)$$ at a scale $Q^2 = 2$ GeV$^2$.« less

First Monte Carlo Global Analysis of Nucleon Transversity with Lattice QCD Constraints

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Huey-Wen; Melnitchouk, Wally; Prokudin, Alexei

We report on the first global QCD analysis of the quark transversity distributions in the nucleon from semi-inclusive deep-inelastic scattering (SIDIS), using a new Monte Carlo method based on nested sampling and constraints on the isovector tensor chargemore » $$g_T$$ from lattice QCD. A simultaneous fit to the available SIDIS Collins asymmetry data is compatible with $$g_T$$ values extracted from a comprehensive reanalysis of existing lattice simulations, in contrast to previous analyses, which found significantly smaller $$g_T$$ values. The contributions to the nucleon tensor charge from $u$ and $d$ quarks are found to be $$\\delta u = 0.3(2)$$ and $$\\delta d = -0.7(2)$$ at a scale $Q^2 = 2$ GeV$^2$.« less

First Monte Carlo Global Analysis of Nucleon Transversity with Lattice QCD Constraints.

PubMed

Lin, H-W; Melnitchouk, W; Prokudin, A; Sato, N; Shows, H

2018-04-13

We report on the first global QCD analysis of the quark transversity distributions in the nucleon from semi-inclusive deep-inelastic scattering (SIDIS), using a new Monte Carlo method based on nested sampling and constraints on the isovector tensor charge g_{T} from lattice QCD. A simultaneous fit to the available SIDIS Collins asymmetry data is compatible with g_{T} values extracted from a comprehensive reanalysis of existing lattice simulations, in contrast to previous analyses, which found significantly smaller g_{T} values. The contributions to the nucleon tensor charge from u and d quarks are found to be δu=0.3(2) and δd=-0.7(2) at a scale Q^{2}=2  GeV^{2}.

First Monte Carlo Global Analysis of Nucleon Transversity with Lattice QCD Constraints

NASA Astrophysics Data System (ADS)

Lin, H.-W.; Melnitchouk, W.; Prokudin, A.; Sato, N.; Shows, H.; Jefferson Lab Angular Momentum JAM Collaboration

2018-04-01

We report on the first global QCD analysis of the quark transversity distributions in the nucleon from semi-inclusive deep-inelastic scattering (SIDIS), using a new Monte Carlo method based on nested sampling and constraints on the isovector tensor charge gT from lattice QCD. A simultaneous fit to the available SIDIS Collins asymmetry data is compatible with gT values extracted from a comprehensive reanalysis of existing lattice simulations, in contrast to previous analyses, which found significantly smaller gT values. The contributions to the nucleon tensor charge from u and d quarks are found to be δ u =0.3 (2 ) and δ d =-0.7 (2 ) at a scale Q2=2 GeV2.

International trade and waste and fuel managment issue, 2008

DOE Office of Scientific and Technical Information (OSTI.GOV)

Agnihotri, Newal

The focus of the January-February issue is on international trade and waste and fuel managment. Major articles/reports in this issue include: A global solution for clients, by Yves Linz, AREVA NP; A safer, secure and economical plant, by Andy White, GE Hitachi Nuclear; Robust global prospects, by Ken Petrunik, Atomic Energy of Canada Limited; Development of NPPs in China, by Chen Changbing and Li Huiqiang, Huazhong University of Science and Technology; Yucca Mountain update; and, A class of its own, by Tyler Lamberts, Entergy Nuclear. The Industry Innovation articles in this issue are: Fuel assembly inspection program, by Jim Lemons,more » Tennessee Valley Authority; and, Improved in-core fuel shuffle for reduced refueling duration, by James Tusar, Exelon Nuclear.« less

Kinetic study of GeO disproportionation into a GeO{sub 2}/Ge system using x-ray photoelectron spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang Shengkai; Department of Materials Engineering, University of Tokyo, 7-3-1 Hongo, Bunkyo-ku, Tokyo 113-8656; CREST, Japan Science and Technology Agency

2012-08-06

GeO disproportionation into GeO{sub 2} and Ge is studied through x-ray photoelectron spectroscopy. Direct evidence for the reaction 2GeO {yields} GeO{sub 2} + Ge after annealing in ultra-high vacuum is presented. Activation energy for GeO disproportionation is found to be about 0.7 {+-} 0.2 eV through kinetic and thermodynamic calculations. A kinetic model of GeO disproportionation is established by considering oxygen transfer in the GeO network. The relationship between GeO disproportionation and GeO desorption induced by GeO{sub 2}/Ge interfacial reaction is discussed, and the apparent contradiction between GeO desorption via interfacial redox reaction and GeO disproportionation into Ge and GeO{submore » 2} is explained by considering the oxygen vacancy.« less

Surface Observation Climatic Summaries (SOCS) For Mather AFB, California

DTIC Science & Technology

1992-02-01

1100 SPEND (RTS) CE14 GEIS GE25 OBS GE14 GEl8 GE25 OBS GE14 GEl8 GE25 OBS GE14 GEl8 GE25 OBS CATEGORY A 1.7 .5 .1 930 1.6 .6 .1 930 1.6 .4 930 3.4 1.0...ITS) GE14 0E18 GE25 ORS GE14 GEIS GE25 OS GE14 GEl8 GE25 OBS GE14 GE18 GE25 OBS CATEGORY A 5.7 2.4 930 5.2 1.3 .2 930 1.7 .5 .2 930 1.5 .5 .1 930...TIME (LST) 0600 - 2000 ALL HOURS SPEED K75 GE14 GEl8 GE25 OBS GE14 GEl8 UE25 OS CAT Y A 3.5 1.1 .1 4650 2.8 .9

Ge K-Edge Extended X-Ray Absorption Fine Structure Study of the Local Structure of Amorphous GeTe and the Crystallization

NASA Astrophysics Data System (ADS)

Maeda, Yoshihito; Wakagi, Masatoshi

1991-01-01

The local structure and crystallization of amorphous GeTe (a-GeTe) were examined by means of Ge K-edge EXAFS. In a-GeTe, both Ge-Ge and Ge-Te bonds were observed to exist in nearest neighbors of Ge. The average coordination number around Ge is 3.7, which is close to the tetrahedral structure. A random covalent network (RCN) model seems to be suitable for the local Structure. After a-GeTe crystallizes at 129°C, the Ge-Ge bond disappears and the Ge-Te bond length increases considerably. As temperature rises, in a-GeTe the Debye-Waller factor of the Ge-Te bond increases greatly, while that of the Ge-Ge bond increases only slightly. At the crystallization, it is found that the fluctuation of the Ge-Te bond length plays a major role in the change of the local structure and bonding state around Ge.

Staged Catalytic Partial Oxidation (SCPO) System - The State of Art Integrated Short Contact Time Hydrogen Generator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke Liu; Jin Ki Hong; Wei Wei

Research and development on hydrogen and syngas production have great potential in addressing the following challenges in energy arena: (1) produce more clean fuels to meet the increasing demands for clean liquid and gaseous fuels for transportation and electricity generation, (2) increase the efficiency of energy utilization for fuels and electricity production, and (3) eliminate the pollutants and decouple the link between energy utilization and greenhouse gas emissions in end-use systems [Song, 2006, Liu, Song & Subramani 2009]. In this project, GE Global Research (GEGR) collaborated with Argonne National Laboratory (ANL) and the University of Minnesota (UoMn), developed and demonstratedmore » a low cost, compact staged catalytic partial oxidation (SCPO) technology for distributed hydrogen generation. GEGR analyzed different reforming system designs, and developed the SCPO reforming system which is a unique technology staging and integrating 3 different short contact time catalysts in a single, compact reactor: catalytic partial oxidation (CPO), steam methane reforming (SMR) and water-gas shift (WGS). This integration is demonstrated via the fabrication of a prototype scale unit of each key technology. Approaches for key technical challenges of the program includes: · Analyzed different system designs · Designed the SCPO hydrogen production system · Developed highly active and sulfur tolerant CPO catalysts · Designed and built different pilot-scale reactors to demonstrate each key technology · Evaluated different operating conditions · Quantified the efficiency and cost of the system · Developed process design package (PDP) for 1500 kg H2/day distributed H2 production unit. SCPO met the Department of Energy (DOE) and GE’s cost and efficiency targets for distributed hydrogen production.« less

Toward operative in vivo fluorescence imaging of the c-Met proto-oncogene for personalization of therapy in ovarian cancer.

PubMed

Liu, Shujuan; Zheng, Yong; Volpi, Davide; El-Kasti, Muna; Klotz, Daniel; Tullis, Iain; Henricks, Andrea; Campo, Leticia; Myers, Kevin; Laios, Alex; Thomas, Peter; Ng, Tony; Dhar, Sunanda; Becker, Christian; Vojnovic, Borivoj; Ahmed, Ahmed Ashour

2015-01-15

Standard biomarker testing of a single macroscopic disease site is unlikely to be sufficient because of tumor heterogeneity. A focus on examining global biomarker expression or activity, particularly in microscopic residual chemotherapy-resistant disease, is needed for the appropriate selection of targeted therapies. This study was aimed at establishing a technique for the assessment of biomarkers of ovarian cancer peritoneal spread. An in-house developed fluorescent imaging device was used to detect the expression of the c-Met oncogene in ovarian cancer. A modified cyanine 5-tagged peptide, GE137, with a high in vitro affinity for the human c-Met protein, was tested in a panel of ovarian cancer cell lines. Finally, the feasibility of detecting submillimeter ovarian cancer cell peritoneal metastases in vivo was tested through the intravenous injection of GE137 into mice with tumor xenografts. Using optical imaging it was possible to detect c-Met expression in submillimeter peritoneal metastases that were freshly excised from a human high-grade serous ovarian cancer. GE137 selectively bound to the c-Met tyrosine kinase without activating survival signaling pathways (AKT or extracellular signal-regulated kinase phosphorylation) downstream of c-Met. GE137 specifically accumulated in SKOv3 ovarian cancer cells expressing c-Met via clathrin-mediated endocytosis and emitted a fluorescent signal that lasted for at least 8 hours in tumor xenografts in vivo with a sustained high signal-to-noise ratio. Our results suggest that intraoperative optical imaging could provide a new paradigm for selecting cancer patients for appropriate targeted therapies, particularly after initial chemotherapy. © 2014 American Cancer Society.

Measurement of the top quark mass in the $$t\\bar{t}\\rightarrow\\text{ lepton+jets }$$→ and $$t\\bar{t}\\rightarrow\\text{dilepton}$$ → channels using $$\\sqrt{s}=7$$TeV ATLAS data

DOE PAGES

Aad, G.; Abbott, B.; Abdallah, J.; ...

2015-07-17

The top quark mass was measured in the channelsmore » $$t\\bar{t}$$→ lepton+jets and $$t\\bar{t}$$→ dilepton (lepton = e,μ) based on ATLAS data recorded in 2011. The data were taken at the LHC with a proton–proton centre-of-mass energy of √s = 7 TeV and correspond to an integrated luminosity of 4.6 fb –1. The $$t\\bar{t}$$→ lepton+jets analysis uses a three-dimensional template technique which determines the top quark mass together with a global jet energy scale factor (JSF), and a relative b-to-light-jet energy scale factor (bJSF), where the terms b-jets and light-jets refer to jets originating from b-quarks and u, d, c, s-quarks or gluons, respectively. The analysis of the $$t\\bar{t}$$→ dilepton channel exploits a one-dimensional template method using the m ℓb observable, defined as the average invariant mass of the two lepton+b-jet pairs in each event. The top quark mass is measured to be 172.33 ± 0.75 (stat + JSF + bJSF) ± 1.02(syst) GeV, and 173.79 ± 0.54(stat) ± 1.30(syst) GeV in the $$t\\bar{t}$$→ lepton+jets and $$t\\bar{t}$$→ dilepton channels, respectively. Thus, the combination of the two results yields m top = 172.99 ± 0.48(stat) ± 0.78(syst) GeV, with a total uncertainty of 0.91 GeV.« less

Separate and combined effects of exercise training and weight loss on exercise efficiency and substrate oxidation.

PubMed

Amati, Francesca; Dubé, John J; Shay, Chris; Goodpaster, Bret H

2008-09-01

Perturbations in body weight have been shown to affect energy expenditure and efficiency during physical activity. The separate effects of weight loss and exercise training on exercise efficiency or the proportion of energy derived from fat oxidation during physical activity, however, are not known. The purpose of this study was to determine the separate and combined effects of exercise training and weight loss on metabolic efficiency, economy (EC), and fat oxidation during steady-state moderate submaximal exercise. Sixty-four sedentary older (67 +/- 0.5 yr) overweight to obese (30.7 +/- 0.4 kg/m(2)) volunteers completed 4 mo of either diet-induced weight loss (WL; n = 11), exercise training (EX; n = 36), or the combination of both interventions (WLEX; n = 17). Energy expenditure, gross efficiency (GE), EC, and proportion of energy expended from fat (EF) were determined during a 1-h submaximal (50% of peak aerobic capacity) cycle ergometry exercise before the intervention and at the same absolute work rate after the intervention. We found that EX increased GE by 4.7 +/- 2.2%. EC was similarly increased by 4.2 +/- 2.1% by EX. The addition of concomitant WL to EX (WLEX) resulted in greater increases in GE (9.0 +/- 3.3%) compared with WL alone but not compared with EX alone. These effects remained after adjusting for changes in lean body mass. The proportion of energy derived from fat during the bout of moderate exercise increased with EX and WLEX but not with WL. From these findings, we conclude that exercise training, either alone or in combination with weight loss, increases both exercise efficiency and the utilization of fat during moderate physical activity in previously sedentary, obese older adults. Weight loss alone, however, significantly improves neither efficiency nor utilization of fat during exercise.

The impact of global budgets on pharmaceutical spending and utilization: early experience from the alternative quality contract.

PubMed

Afendulis, Christopher C; Fendrick, A Mark; Song, Zirui; Landon, Bruce E; Safran, Dana Gelb; Mechanic, Robert E; Chernew, Michael E

2014-01-01

In 2009, Blue Cross Blue Shield of Massachusetts implemented a global budget-based payment system, the Alternative Quality Contract (AQC), in which provider groups assumed accountability for spending. We investigate the impact of global budgets on the utilization of prescription drugs and related expenditures. Our analyses indicate no statistically significant evidence that the AQC reduced the use of drugs. Although the impact may change over time, early evidence suggests that it is premature to conclude that global budget systems may reduce access to medications. © The Author(s) 2014.

Etude de l'anémie chez les enfants séropositifs au VIH naïfs au traitement antirétroviral à Lubumbashi, République Démocratique du Congo

PubMed Central

Mwadianvita, Costa Kazadi; Ilunga, Eric Kasamba; Djouma, Jackson; Wembonyama, Cecile Watu; Mutomb, Florence Mujing A; Ekwalanga, Michel Balaka; Kabongo, Joe; Mundongo, Henri; Mupoya, Kalombo; Wembonyama, Stanis; Kalenga Mwenze, Prosper; Nkoy, Albert Mwembo-Tambwe A

2014-01-01

Introduction Beaucoup d'enfants infectés par le VIH arrivent à la consultation dans un état d'anémie. Notre objectif était d’évaluer la prévalence et le typage de l'anémie chez ces enfants. Méthodes C'est une étude transversale réalisée dans 3 centres de prise en charge des Personnes Vivant avec le VIH à Lubumbashi de Mai 2010 à Mai 2011. La population d’étude était de 152 enfants, âgés de 6 à 180 mois, naïfs au traitement antirétroviral. Les statistiques descriptives usuelles ont été utilisées. Résultats La prévalence globale de l'anémie (définie comme l'hémoglobine < 11g/dl) était de 69,1% (n=105) et 11,4% avaient une anémie sévère (Hg < 7,0 g/dl). Parmi eux, 16% ont été transfusés au moins 1 fois. L'anémie sévère était positivement associée au stade clinique de la maladie (p=0,02). L'anémie microcytaire était majoritaire dans les deux tranches d’âge. Elle était plus hypochrome chez les enfants en âge préscolaire soit 9,5% et plus normochrome en âge scolaire soit 15,2%. L'anémie normocytaire était plus normochrome dans les deux tranches d’âge soit 12,4% en âge préscolaire et 6,7% en âge scolaire. L'anémie macrocytaire était rare. Conclusion Environ sept enfants sur dix, âgés de moins de 15 ans infectés par le VIH naïfs au traitement antirétroviral dans notre milieu sont anémiques. L'anémie est corrélée à la sévérité de la maladie. Il est important d'associer une prise en charge nutritionnelle et corriger l'anémie avant une trithérapie antirétrovirale. PMID:25018796

Bond-length relaxation in crystalline Si1-xGex alloys: An extended x-ray-absorption fine-structure study

NASA Astrophysics Data System (ADS)

Kajiyama, Hiroshi; Muramatsu, Shin-Ichi; Shimada, Toshikazu; Nishino, Yoichi

1992-06-01

Extended x-ray-absorption fine-structure spectra for crystalline Si1-xGex alloys, measured at the K edge of Ge at room temperature, are analyzed with a curve-fitting method based on the spherical-wave approximation. The Ge-Ge and Ge-Si bond lengths, coordination numbers of Ge and Si atoms around a Ge atom, and Debye-Waller factors of Ge and Si atoms are obtained. It is shown that Ge-Ge and Ge-Si bonds relax completely, for all Ge concentrations of their study, while the lattice constant varies monotonically, following Vegard's law. As noted by Bragg and later by Pauling and Huggins, the Ge-Ge and Ge-Si bond lengths are close to the sum of their constituent-element atomic radii: nearly 2.45 Å for Ge-Ge bonds and 2.40 Å for Ge-Si bonds. A study on the coordination around a Ge atom in the alloys revealed that Ge and Si atoms mix randomly throughout the compositional range studied.

Thermodynamic Modeling of the Ge-Nd Binary System

NASA Astrophysics Data System (ADS)

Liu, Miao; Li, Changrong; Du, Zhenmin; Guo, Cuiping; Niu, Chunju

The Ge-Nd has been critically assessed by means of the CALculation of PHAse Diagram (CALPHAD) technique. For the liquid phase, the associate model was used with the constituent species Ge, Nd, Ge3Nd5 and Ge1.6Nd in the Ge-Nd system. The terminal solid solution diamond-(Ge), dhcp-(Nd) and bcc_A2-(Nd) in the Ge-Nd system were described using the substitutional model, in which the excess Gibbs energy was formulated with the Redlich-Kister equation. The compounds with homogeneity ranges, α(Ge1.6Nd), β(Ge1.6Nd), (GeNd), (Ge4Nd5) and (Ge3Nd5) were modeled using two sublattices as α(Ge,Nd)1.6Nd, β(Ge,Nd)1.6Nd, (Ge,Nd)Nd, (Ge,Nd)4Nd5 and (Ge,Nd)3Nd5, respectively. A set of self-consistent thermodynamic parameters for each of the Ge-Nd binary systems was obtained. The calculation results agree well with the available experimental data from literatures.

Analyse de la formation des phases du systeme cuivre-germanium par diffraction des rayons X sur des echantillons d'epaisseur nanoscopique

NASA Astrophysics Data System (ADS)

Aubin, Alexandre

With the miniaturization of electronic devices, driven by cost reduction and performance increase, new materials have to be introduced in their fabrication process to solve many emerging problems. These challenges are brought forth by the ITRS (International Technology Roadmap for Semiconductors), a comity in charge of listing the technological needs for the upcoming generations of integrated circuits. Many fields of interest require new technological developments, from global to local interconnections, the transistor gate, the gate insulator thickness, etc. One of the major challenges mentioned in the ITRS roadmap is the need for a new interconnection material. Indeed, the need for a diffusion barrier for the copper lines in local and global interconnections of integrated circuits, the main technology in today's devices, is becoming more hindering with the decrease of the metallization lines. cross-section. In the 90's, a binary compound of copper and germanium, known as the epsilon1-Cu3Ge phase, was investigated as a replacement for aluminum because of its low resistivity, that can reach as low as 5.5muO·cm [1], its stability in contact with both silicon and silicon oxide [2] as well as its thermal stability during anneals [3]. However, copper proved to be a better choice at the time because of its low bulk resistivity of 1.68muO·cm at room temperature[4]. The objective of this master thesis is to re-examine the copper-germanium system, and more specifically the epsilon1-Cu3Ge, for future applications in the microelectronics industry. Different X ray diffraction techniques were used to obtain more information on the system, including in situ X ray diffraction during 3°C/s anneals in an inert helium atmosphere with simultaneous resistance measurement, theta-2theta scans to detect diffraction peaks of the present phases after sample quenching as well as partial acquisition of the reciprocal space of quenched samples which allowed to obtain pole figures for d-spacings of interest. Results obtained on germanium and copper bilayers of total thicknesses between 20nm and 89nm deposited on an inert silicon nitride layer using magnetron sputtering in an MRC-673 show that with an atomic copper concentration between 72 and 87%, the epsilon1-Cu3Ge phase starts to form between 180°C and 210°C during a 3°C/s ramp anneal. At 72% at. copper (50nm thickness) and 75% at. copper (20nm thickness), the epsilon1-Cu3Ge phase is stable above 500°C. However, the measured resistance of the 50nm sample is low between 220°C and 500°C while measured resistance for the 20nm sample it decreases by 45% between 205 and 540°C. At a temperature of 540°C, measured resistance is 10% smaller than on the initial bilayer at room temperature. This value of measured resistance is the same at the end of the measurement during the cooling of the sample at 230°C., which implies that the low resistance is kept after the phase formation. Smaller technology nodes may then require higher formation temperatures to completely form the epsilon1-Cu3Ge phase. Further challenges thus exist to make epsilon1-Cu3Ge interconnections in modern microelectronics devices. Tests with deposition techniques like co-deposition and multilayer stacks of germanium and copper must be made to determine if they can help resolve this problem. Another field of interest for further tests are isothermal anneals, which would allow the formation of the epsilon1-Cu3Ge phase during longer anneals at lower temperatures. This thesis also allowed the acquisition of the phase formation sequence of different samples thicknesses between 20 and 89nm and copper concentrations between 72 and 87% atomic copper during 3°C/s anneals up to 850°C using in situ X ray diffraction. Brand new information was acquired on the metastable phases of the copper-germanium system. Observed diffraction peaks allowed to confirm the crystalline structures observed by Schubert and Brandauer in the 50's [5] as well as estimate the cell parameter of the body centered cubic epsilon2- Cu3Ge, which is approximately 5.03 A. Simultaneous formation of zeta-Cu5Ge and epsilon1-Cu 3Ge was also observed in a 82 % at. copper sample, which had not previously been reported in the literature.

Arctic Haze: A Chemical, Physical, Optical and Meteorological Study

DTIC Science & Technology

1976-08-01

Interior 01-31-77 Alaska 03-6-022-35154 Radiation NOA 02-01-76 $18,485 3 mos. Studies at Mauna Loa 01-31-77 Observatory -P6’- Title Agen Period Amou i...Pending Ainlications Radiation Studies at Mauna Loa NOA I year $21,069 Observatory Study of Non-Resonant NSF 1 year $I1,5 99 Scattered Sunlight at...Shaw, G.E. Solar radiation research being carried out at the Mauna Loa Observatory. Presented at the conference on Global Monitoring for Climatic Change

Spray and Combustion of Gelled Hypergolic Propellants

DTIC Science & Technology

2014-10-20

Anderson Postdoc tlnu 2/09 Ast:I·ium Mau DeRidder Anderson Postdoc tlnu 5110 Spacex Chenzhou Lian Merkle Postdoc tlnu 8/10 IBM Watson Labs Changjin Yoon...Heister PhD, 1211 1 GE Global Research Center - 5 - - 6 - Erik Dambach Heister/Pourpoint PhD, 5/11 SpaceX Paulo Santos Campanella PhD, 8/11...Yair Solomon Anderson MS, 8/12 Technion Jordan Forness Heister/Pourpoint MS, 5/13 SpaceX Jennifer Mallory Sojka PhD, 5/12 Western New England

A precision search for WIMPs with charged cosmic rays

NASA Astrophysics Data System (ADS)

Reinert, Annika; Winkler, Martin Wolfgang

2018-01-01

AMS-02 has reached the sensitivity to probe canonical thermal WIMPs by their annihilation into antiprotons. Due to the high precision of the data, uncertainties in the astrophysical background have become the most limiting factor for indirect dark matter detection. In this work we systematically quantify and—where possible—reduce uncertainties in the antiproton background. We constrain the propagation of charged cosmic rays through the combination of antiproton, B/C and positron data. Cross section uncertainties are determined from a wide collection of accelerator data and are—for the first time ever—fully taken into account. This allows us to robustly constrain even subdominant dark matter signals through their spectral properties. For a standard NFW dark matter profile we are able to exclude thermal WIMPs with masses up to 570 GeV which annihilate into bottom quarks. While we confirm a reported excess compatible with dark matter of mass around 80 GeV, its local (global) significance only reaches 2.2 σ (1.1 σ) in our analysis.

Gene Expression Dynamics Inspector (GEDI): for integrative analysis of expression profiles

NASA Technical Reports Server (NTRS)

Eichler, Gabriel S.; Huang, Sui; Ingber, Donald E.

2003-01-01

Genome-wide expression profiles contain global patterns that evade visual detection in current gene clustering analysis. Here, a Gene Expression Dynamics Inspector (GEDI) is described that uses self-organizing maps to translate high-dimensional expression profiles of time courses or sample classes into animated, coherent and robust mosaics images. GEDI facilitates identification of interesting patterns of molecular activity simultaneously across gene, time and sample space without prior assumption of any structure in the data, and then permits the user to retrieve genes of interest. Important changes in genome-wide activities may be quickly identified based on 'Gestalt' recognition and hence, GEDI may be especially useful for non-specialist end users, such as physicians. AVAILABILITY: GEDI v1.0 is written in Matlab, and binary Matlab.dll files which require Matlab to run can be downloaded for free by academic institutions at http://www.chip.org/ge/gedihome.html Supplementary information: http://www.chip.org/ge/gedihome.html.

Detailed Inventory of Electric Power Consuming Devices Utilized in Tactical Systems 1

DTIC Science & Technology

1992-03-01

1 Jody Wojciechowski ODCSLOG I Madeline M. Decker DALO-TSE Aberden Proving Ground , MD 21005-5066 Room 1E588, Pentagon Washington, DC 20310-0561...Aberdeen Proving Ground , MD 21005 1400 Wilson Blvd. Arlington, VA 22209 1 Commander US Army Aberdeen Proving Ground I Director ATTN: STEAP-MT-U (GE...Information Center Aberdeen Proving Ground , MD 21005-5071 Cameron Station ATrN: DTIC-FDAC Director Alexandria, VA 22304-6145 US Ballistics Research

Amorphous Fast Ion Conducting Systems, Part 1. Structure and Properties of Mid and Far IR Transmitting Materials, Part 2

DTIC Science & Technology

1991-10-31

Glasses with high conductivities can also be formed with the Lewis acids GeO 2 (11 ) and no doubt Bi 20 3, TeO2 , etc., but these have been less...P age 3 1. Mechanical Relaxation and Relation to Electrical Relaxation in Fast Ion-Conducting Glasses ...relaxation although considerable information was available for the classical alkali silicate and borate glasses . Our program was to utilize the rheovibron

MEIC electron cooling program

DOE PAGES

Derbenev, Yaroslav S.; Zhang, Yuhong

2014-12-01

Cooling of proton and ion beams is essential for achieving high luminosities (up to above 10 34 cm -2s -1) for MEIC, a Medium energy Electron-Ion Collider envisioned at JLab [1] for advanced nuclear science research. In the present conceptual design, we utilize the conventional election cooling method and adopted a multi-staged cooling scheme for reduction of and maintaining low beam emittances [2,3,4]. Two electron cooling facilities are required to support the scheme: one is a low energy (up to 2 MeV) DC cooler installed in the MEIC ion pre-booster (with the proton kinetic energy up to 3 GeV); themore » other is a high electron energy (up to 55 MeV) cooler in the collider ring (with the proton kinetic energy from 25 to 100 GeV). The high energy cooler, which is based on the ERL technology and a circulator ring, utilizes a bunched electron beam to cool bunched proton or ion beams. To complete the MEIC cooling concept and a technical design of the ERL cooler as well as to develop supporting technologies, an R&D program has been initiated at Jefferson Lab and significant progresses have been made since then. In this study, we present a brief description of the cooler design and a summary of the progress in this cooling R&D.« less

Analysis of GEANT4 Physics List Properties in the 12 GeV MOLLER Simulation Framework

NASA Astrophysics Data System (ADS)

Haufe, Christopher; Moller Collaboration

2013-10-01

To determine the validity of new physics beyond the scope of the electroweak theory, nuclear physicists across the globe have been collaborating on future endeavors that will provide the precision needed to confirm these speculations. One of these is the MOLLER experiment - a low-energy particle experiment that will utilize the 12 GeV upgrade of Jefferson Lab's CEBAF accelerator. The motivation of this experiment is to measure the parity-violating asymmetry of scattered polarized electrons off unpolarized electrons in a liquid hydrogen target. This measurement would allow for a more precise determination of the electron's weak charge and weak mixing angle. While still in its planning stages, the MOLLER experiment requires a detailed simulation framework in order to determine how the project should be run in the future. The simulation framework for MOLLER, called ``remoll'', is written in GEANT4 code. As a result, the simulation can utilize a number of GEANT4 coded physics lists that provide the simulation with a number of particle interaction constraints based off of different particle physics models. By comparing these lists with one another using the data-analysis application ROOT, the most optimal physics list for the MOLLER simulation can be determined and implemented. This material is based upon work supported by the National Science Foundation under Grant No. 714001.

Phenomenological MSSM interpretation of CMS searches in pp collisions at $$ \\sqrt{s}=7 $$ and 8 TeV

DOE PAGES

Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; ...

2016-10-24

Searches for new physics by the CMS collaboration are interpreted in the framework of the phenomenological minimal supersymmetric standard model (pMSSM). The data samples used in this study were collected atmore » $$ \\sqrt{s}=7 $$ and 8 TeV and have integrated luminosities of 5.0 fb$$^{-1}$$ and 19.5 fb$$^{-1}$$, respectively. A global Bayesian analysis is performed, incorporating results from a broad range of CMS supersymmetry searches, as well as constraints from other experiments. Because the pMSSM incorporates several well-motivated assumptions that reduce the 120 parameters of the MSSM to just 19 parameters defined at the electroweak scale, it is possible to assess the results of the study in a relatively straightforward way. Approximately half of the model points in a potentially accessible subspace of the pMSSM are excluded, including all pMSSM model points with a gluino mass below 500 GeV, as well as models with a squark mass less than 300 GeV. Models with chargino and neutralino masses below 200 GeV are disfavored, but no mass range of model points can be ruled out based on the analyses considered. Lastly, the nonexcluded regions in the pMSSM parameter space are characterized in terms of physical processes and key observables, and implications for future searches are discussed.« less

Phenomenological MSSM interpretation of CMS searches in pp collisions at $$ \\sqrt{s}=7 $$ and 8 TeV

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.

Searches for new physics by the CMS collaboration are interpreted in the framework of the phenomenological minimal supersymmetric standard model (pMSSM). The data samples used in this study were collected atmore » $$ \\sqrt{s}=7 $$ and 8 TeV and have integrated luminosities of 5.0 fb$$^{-1}$$ and 19.5 fb$$^{-1}$$, respectively. A global Bayesian analysis is performed, incorporating results from a broad range of CMS supersymmetry searches, as well as constraints from other experiments. Because the pMSSM incorporates several well-motivated assumptions that reduce the 120 parameters of the MSSM to just 19 parameters defined at the electroweak scale, it is possible to assess the results of the study in a relatively straightforward way. Approximately half of the model points in a potentially accessible subspace of the pMSSM are excluded, including all pMSSM model points with a gluino mass below 500 GeV, as well as models with a squark mass less than 300 GeV. Models with chargino and neutralino masses below 200 GeV are disfavored, but no mass range of model points can be ruled out based on the analyses considered. Lastly, the nonexcluded regions in the pMSSM parameter space are characterized in terms of physical processes and key observables, and implications for future searches are discussed.« less

Phenomenological MSSM interpretation of CMS searches in pp collisions at √{s}=7 and 8 TeV

NASA Astrophysics Data System (ADS)

Khachatryan, V.; Sirunyan, A. M.; Tumasyan, A.; Adam, W.; Asilar, E.; Bergauer, T.; Brandstetter, J.; Brondolin, E.; Dragicevic, M.; Erö, J.; Flechl, M.; Friedl, M.; Frühwirth, R.; Ghete, V. M.; Hartl, C.; Hörmann, N.; Hrubec, J.; Jeitler, M.; König, A.; Krammer, M.; Krätschmer, I.; Liko, D.; Matsushita, T.; Mikulec, I.; Rabady, D.; Rad, N.; Rahbaran, B.; Rohringer, H.; Schieck, J.; Schöfbeck, R.; Strauss, J.; Treberer-Treberspurg, W.; Waltenberger, W.; Wulz, C.-E.; Mossolov, V.; Shumeiko, N.; Suarez Gonzalez, J.; Alderweireldt, S.; Cornelis, T.; de Wolf, E. A.; Janssen, X.; Knutsson, A.; Lauwers, J.; Luyckx, S.; van de Klundert, M.; van Haevermaet, H.; van Mechelen, P.; van Remortel, N.; van Spilbeeck, A.; Abu Zeid, S.; Blekman, F.; D'Hondt, J.; Daci, N.; de Bruyn, I.; Deroover, K.; Heracleous, N.; Keaveney, J.; Lowette, S.; Moortgat, S.; Moreels, L.; Olbrechts, A.; Python, Q.; Strom, D.; Tavernier, S.; van Doninck, W.; van Mulders, P.; van Onsem, G. P.; van Parijs, I.; Brun, H.; Caillol, C.; Clerbaux, B.; de Lentdecker, G.; Fasanella, G.; Favart, L.; Goldouzian, R.; Grebenyuk, A.; Karapostoli, G.; Lenzi, T.; Léonard, A.; Maerschalk, T.; Marinov, A.; Perniè, L.; Randle-Conde, A.; Seva, T.; Vander Velde, C.; Vanlaer, P.; Yonamine, R.; Zenoni, F.; Zhang, F.; Beernaert, K.; Benucci, L.; Cimmino, A.; Crucy, S.; Dobur, D.; Fagot, A.; Garcia, G.; Gul, M.; McCartin, J.; Ocampo Rios, A. A.; Poyraz, D.; Ryckbosch, D.; Salva, S.; Sigamani, M.; Tytgat, M.; van Driessche, W.; Yazgan, E.; Zaganidis, N.; Basegmez, S.; Beluffi, C.; Bondu, O.; Brochet, S.; Bruno, G.; Caudron, A.; Ceard, L.; de Visscher, S.; Delaere, C.; Delcourt, M.; Favart, D.; Forthomme, L.; Giammanco, A.; Jafari, A.; Jez, P.; Komm, M.; Lemaitre, V.; Mertens, A.; Musich, M.; Nuttens, C.; Perrini, L.; Piotrzkowski, K.; Quertenmont, L.; Selvaggi, M.; Vidal Marono, M.; Beliy, N.; Hammad, G. H.; Aldá Júnior, W. L.; Alves, F. L.; Alves, G. A.; Brito, L.; Correa Martins Junior, M.; Hamer, M.; Hensel, C.; Moraes, A.; Pol, M. E.; Rebello Teles, P.; Belchior Batista Das Chagas, E.; Carvalho, W.; Chinellato, J.; Custódio, A.; da Costa, E. M.; de Jesus Damiao, D.; de Oliveira Martins, C.; Fonseca de Souza, S.; Huertas Guativa, L. M.; Malbouisson, H.; Matos Figueiredo, D.; Mora Herrera, C.; Mundim, L.; Nogima, H.; Prado da Silva, W. L.; Santoro, A.; Sznajder, A.; Tonelli Manganote, E. J.; Vilela Pereira, A.; Ahuja, S.; Bernardes, C. A.; de Souza Santos, A.; Dogra, S.; Fernandez Perez Tomei, T. R.; Gregores, E. M.; Mercadante, P. G.; Moon, C. S.; Novaes, S. F.; Padula, Sandra S.; Romero Abad, D.; Ruiz Vargas, J. C.; Aleksandrov, A.; Hadjiiska, R.; Iaydjiev, P.; Rodozov, M.; Stoykova, S.; Sultanov, G.; Vutova, M.; Dimitrov, A.; Glushkov, I.; Litov, L.; Pavlov, B.; Petkov, P.; Fang, W.; Ahmad, M.; Bian, J. G.; Chen, G. M.; Chen, H. S.; Chen, M.; Cheng, T.; Du, R.; Jiang, C. H.; Leggat, D.; Plestina, R.; Romeo, F.; Shaheen, S. M.; Spiezia, A.; Tao, J.; Wang, C.; Wang, Z.; Zhang, H.; Asawatangtrakuldee, C.; Ban, Y.; Li, Q.; Liu, S.; Mao, Y.; Qian, S. J.; Wang, D.; Xu, Z.; Avila, C.; Cabrera, A.; Chaparro Sierra, L. F.; Florez, C.; Gomez, J. P.; Gomez Moreno, B.; Sanabria, J. C.; Godinovic, N.; Lelas, D.; Puljak, I.; Ribeiro Cipriano, P. M.; Antunovic, Z.; Kovac, M.; Brigljevic, V.; Kadija, K.; Luetic, J.; Micanovic, S.; Sudic, L.; Attikis, A.; Mavromanolakis, G.; Mousa, J.; Nicolaou, C.; Ptochos, F.; Razis, P. A.; Rykaczewski, H.; Finger, M.; Finger, M.; Elkafrawy, T.; Mahmoud, M. A.; Mohammed, Y.; Calpas, B.; Kadastik, M.; Murumaa, M.; Raidal, M.; Tiko, A.; Veelken, C.; Eerola, P.; Pekkanen, J.; Voutilainen, M.; Härkönen, J.; Karimäki, V.; Kinnunen, R.; Lampén, T.; Lassila-Perini, K.; Lehti, S.; Lindén, T.; Luukka, P.; Peltola, T.; Tuominiemi, J.; Tuovinen, E.; Wendland, L.; Talvitie, J.; Tuuva, T.; Besancon, M.; Couderc, F.; Dejardin, M.; Denegri, D.; Fabbro, B.; Faure, J. L.; Favaro, C.; Ferri, F.; Ganjour, S.; Givernaud, A.; Gras, P.; Hamel de Monchenault, G.; Jarry, P.; Locci, E.; Machet, M.; Malcles, J.; Rander, J.; Rosowsky, A.; Titov, M.; Zghiche, A.; Abdulsalam, A.; Antropov, I.; Baffioni, S.; Beaudette, F.; Busson, P.; Cadamuro, L.; Chapon, E.; Charlot, C.; Davignon, O.; Filipovic, N.; Granier de Cassagnac, R.; Jo, M.; Kraml, S.; Lisniak, S.; Miné, P.; Naranjo, I. N.; Nguyen, M.; Ochando, C.; Ortona, G.; Paganini, P.; Pigard, P.; Regnard, S.; Salerno, R.; Sirois, Y.; Strebler, T.; Yilmaz, Y.; Zabi, A.; Agram, J.-L.; Andrea, J.; Aubin, A.; Bloch, D.; Brom, J.-M.; Buttignol, M.; Chabert, E. C.; Chanon, N.; Collard, C.; Conte, E.; Coubez, X.; Fontaine, J.-C.; Gelé, D.; Goerlach, U.; Goetzmann, C.; Le Bihan, A.-C.; Merlin, J. A.; Skovpen, K.; van Hove, P.; Gadrat, S.; Beauceron, S.; Bernet, C.; Boudoul, G.; Bouvier, E.; Carrillo Montoya, C. A.; Chierici, R.; Contardo, D.; Courbon, B.; Depasse, P.; El Mamouni, H.; Fan, J.; Fay, J.; Gascon, S.; Gouzevitch, M.; Ille, B.; Lagarde, F.; Laktineh, I. B.; Lethuillier, M.; Mirabito, L.; Pequegnot, A. L.; Perries, S.; Popov, A.; Ruiz Alvarez, J. D.; Sabes, D.; Sordini, V.; Vander Donckt, M.; Verdier, P.; Viret, S.; Toriashvili, T.; Tsamalaidze, Z.; Autermann, C.; Beranek, S.; Feld, L.; Heister, A.; Kiesel, M. K.; Klein, K.; Lipinski, M.; Ostapchuk, A.; Preuten, M.; Raupach, F.; Schael, S.; Schulte, J. F.; Verlage, T.; Weber, H.; Zhukov, V.; Ata, M.; Brodski, M.; Dietz-Laursonn, E.; Duchardt, D.; Endres, M.; Erdmann, M.; Erdweg, S.; Esch, T.; Fischer, R.; Güth, A.; Hebbeker, T.; Heidemann, C.; Hoepfner, K.; Knutzen, S.; Merschmeyer, M.; Meyer, A.; Millet, P.; Mukherjee, S.; Olschewski, M.; Padeken, K.; Papacz, P.; Pook, T.; Radziej, M.; Reithler, H.; Rieger, M.; Scheuch, F.; Sonnenschein, L.; Teyssier, D.; Thüer, S.; Cherepanov, V.; Erdogan, Y.; Flügge, G.; Geenen, H.; Geisler, M.; Hoehle, F.; Kargoll, B.; Kress, T.; Künsken, A.; Lingemann, J.; Nehrkorn, A.; Nowack, A.; Nugent, I. M.; Pistone, C.; Pooth, O.; Stahl, A.; Aldaya Martin, M.; Asin, I.; Bartosik, N.; Behnke, O.; Behrens, U.; Borras, K.; Burgmeier, A.; Campbell, A.; Contreras-Campana, C.; Costanza, F.; Diez Pardos, C.; Dolinska, G.; Dooling, S.; Dorland, T.; Eckerlin, G.; Eckstein, D.; Eichhorn, T.; Flucke, G.; Gallo, E.; Garay Garcia, J.; Geiser, A.; Gizhko, A.; Gunnellini, P.; Hauk, J.; Hempel, M.; Jung, H.; Kalogeropoulos, A.; Karacheban, O.; Kasemann, M.; Katsas, P.; Kieseler, J.; Kleinwort, C.; Korol, I.; Lange, W.; Leonard, J.; Lipka, K.; Lobanov, A.; Lohmann, W.; Mankel, R.; Melzer-Pellmann, I.-A.; Meyer, A. B.; Mittag, G.; Mnich, J.; Mussgiller, A.; Naumann-Emme, S.; Nayak, A.; Ntomari, E.; Perrey, H.; Pitzl, D.; Placakyte, R.; Raspereza, A.; Roland, B.; Sahin, M. Ö.; Saxena, P.; Schoerner-Sadenius, T.; Seitz, C.; Spannagel, S.; Stefaniuk, N.; Trippkewitz, K. D.; Walsh, R.; Wissing, C.; Blobel, V.; Centis Vignali, M.; Draeger, A. R.; Dreyer, T.; Erfle, J.; Garutti, E.; Goebel, K.; Gonzalez, D.; Görner, M.; Haller, J.; Hoffmann, M.; Höing, R. S.; Junkes, A.; Klanner, R.; Kogler, R.; Kovalchuk, N.; Lapsien, T.; Lenz, T.; Marchesini, I.; Marconi, D.; Meyer, M.; Niedziela, M.; Nowatschin, D.; Ott, J.; Pantaleo, F.; Peiffer, T.; Perieanu, A.; Pietsch, N.; Poehlsen, J.; Sander, C.; Scharf, C.; Schleper, P.; Schlieckau, E.; Schmidt, A.; Schumann, S.; Schwandt, J.; Sola, V.; Stadie, H.; Steinbrück, G.; Stober, F. M.; Tholen, H.; Troendle, D.; Usai, E.; Vanelderen, L.; Vanhoefer, A.; Vormwald, B.; Barth, C.; Baus, C.; Berger, J.; Böser, C.; Butz, E.; Chwalek, T.; Colombo, F.; de Boer, W.; Descroix, A.; Dierlamm, A.; Fink, S.; Frensch, F.; Friese, R.; Giffels, M.; Gilbert, A.; Haitz, D.; Hartmann, F.; Heindl, S. M.; Husemann, U.; Katkov, I.; Kornmayer, A.; Lobelle Pardo, P.; Maier, B.; Mildner, H.; Mozer, M. U.; Müller, T.; Müller, Th.; Plagge, M.; Quast, G.; Rabbertz, K.; Röcker, S.; Roscher, F.; Schröder, M.; Sieber, G.; Simonis, H. J.; Ulrich, R.; Wagner-Kuhr, J.; Wayand, S.; Weber, M.; Weiler, T.; Williamson, S.; Wöhrmann, C.; Wolf, R.; Anagnostou, G.; Daskalakis, G.; Geralis, T.; Giakoumopoulou, V. A.; Kyriakis, A.; Loukas, D.; Psallidas, A.; Topsis-Giotis, I.; Agapitos, A.; Kesisoglou, S.; Panagiotou, A.; Saoulidou, N.; Tziaferi, E.; Evangelou, I.; Flouris, G.; Foudas, C.; Kokkas, P.; Loukas, N.; Manthos, N.; Papadopoulos, I.; Paradas, E.; Strologas, J.; Bencze, G.; Hajdu, C.; Hidas, P.; Horvath, D.; Sikler, F.; Veszpremi, V.; Vesztergombi, G.; Zsigmond, A. J.; Beni, N.; Czellar, S.; Karancsi, J.; Molnar, J.; Szillasi, Z.; Bartók, M.; Makovec, A.; Raics, P.; Trocsanyi, Z. L.; Ujvari, B.; Choudhury, S.; Mal, P.; Mandal, K.; Sahoo, D. K.; Sahoo, N.; Swain, S. K.; Bansal, S.; Beri, S. B.; Bhatnagar, V.; Chawla, R.; Gupta, R.; Bhawandeep, U.; Kalsi, A. K.; Kaur, A.; Kaur, M.; Kumar, R.; Mehta, A.; Mittal, M.; Singh, J. B.; Walia, G.; Kumar, Ashok; Bhardwaj, A.; Choudhary, B. C.; Garg, R. B.; Keshri, S.; Kumar, A.; Malhotra, S.; Naimuddin, M.; Nishu, N.; Ranjan, K.; Sharma, R.; Sharma, V.; Bhattacharya, R.; Bhattacharya, S.; Chatterjee, K.; Dey, S.; Dutta, S.; Ghosh, S.; Majumdar, N.; Modak, A.; Mondal, K.; Mukhopadhyay, S.; Nandan, S.; Purohit, A.; Roy, A.; Roy, D.; Roy Chowdhury, S.; Sarkar, S.; Sharan, M.; Chudasama, R.; Dutta, D.; Jha, V.; Kumar, V.; Mohanty, A. K.; Pant, L. M.; Shukla, P.; Topkar, A.; Aziz, T.; Banerjee, S.; Bhowmik, S.; Chatterjee, R. M.; Dewanjee, R. K.; Dugad, S.; Ganguly, S.; Ghosh, S.; Guchait, M.; Gurtu, A.; Jain, Sa.; Kole, G.; Kumar, S.; Mahakud, B.; Maity, M.; Majumder, G.; Mazumdar, K.; Mitra, S.; Mohanty, G. B.; Parida, B.; Sarkar, T.; Sur, N.; Sutar, B.; Wickramage, N.; Chauhan, S.; Dube, S.; Kapoor, A.; Kothekar, K.; Rane, A.; Sharma, S.; Bakhshiansohi, H.; Behnamian, H.; Etesami, S. M.; Fahim, A.; Khakzad, M.; Mohammadi Najafabadi, M.; Naseri, M.; Paktinat Mehdiabadi, S.; Rezaei Hosseinabadi, F.; Safarzadeh, B.; Zeinali, M.; Felcini, M.; Grunewald, M.; Abbrescia, M.; Calabria, C.; Caputo, C.; Colaleo, A.; Creanza, D.; Cristella, L.; de Filippis, N.; de Palma, M.; Fiore, L.; Iaselli, G.; Maggi, G.; Maggi, M.; Miniello, G.; My, S.; Nuzzo, S.; Pompili, A.; Pugliese, G.; Radogna, R.; Ranieri, A.; Selvaggi, G.; Silvestris, L.; Venditti, R.; Abbiendi, G.; Battilana, C.; Bonacorsi, D.; Braibant-Giacomelli, S.; Brigliadori, L.; Campanini, R.; Capiluppi, P.; Castro, A.; Cavallo, F. R.; Chhibra, S. S.; Codispoti, G.; Cuffiani, M.; Dallavalle, G. M.; Fabbri, F.; Fanfani, A.; Fasanella, D.; Giacomelli, P.; Grandi, C.; Guiducci, L.; Marcellini, S.; Masetti, G.; Montanari, A.; Navarria, F. L.; Perrotta, A.; Rossi, A. M.; Rovelli, T.; Siroli, G. P.; Tosi, N.; Cappello, G.; Chiorboli, M.; Costa, S.; di Mattia, A.; Giordano, F.; Potenza, R.; Tricomi, A.; Tuve, C.; Barbagli, G.; Ciulli, V.; Civinini, C.; D'Alessandro, R.; Focardi, E.; Gori, V.; Lenzi, P.; Meschini, M.; Paoletti, S.; Sguazzoni, G.; Viliani, L.; Benussi, L.; Bianco, S.; Fabbri, F.; Piccolo, D.; Primavera, F.; Calvelli, V.; Ferro, F.; Lo Vetere, M.; Monge, M. R.; Robutti, E.; Tosi, S.; Brianza, L.; Dinardo, M. E.; Fiorendi, S.; Gennai, S.; Gerosa, R.; Ghezzi, A.; Govoni, P.; Malvezzi, S.; Manzoni, R. A.; Marzocchi, B.; Menasce, D.; Moroni, L.; Paganoni, M.; Pedrini, D.; Pigazzini, S.; Ragazzi, S.; Redaelli, N.; Tabarelli de Fatis, T.; Buontempo, S.; Cavallo, N.; di Guida, S.; Esposito, M.; Fabozzi, F.; Iorio, A. O. M.; Lanza, G.; Lista, L.; Meola, S.; Merola, M.; Paolucci, P.; Sciacca, C.; Thyssen, F.; Azzi, P.; Bacchetta, N.; Benato, L.; Bisello, D.; Boletti, A.; Branca, A.; Carlin, R.; Checchia, P.; Dall'Osso, M.; Dorigo, T.; Dosselli, U.; Gasparini, F.; Gasparini, U.; Gozzelino, A.; Kanishchev, K.; Lacaprara, S.; Margoni, M.; Meneguzzo, A. T.; Pazzini, J.; Pozzobon, N.; Ronchese, P.; Simonetto, F.; Torassa, E.; Tosi, M.; Ventura, S.; Zanetti, M.; Zotto, P.; Zucchetta, A.; Zumerle, G.; Braghieri, A.; Magnani, A.; Montagna, P.; Ratti, S. P.; Re, V.; Riccardi, C.; Salvini, P.; Vai, I.; Vitulo, P.; Alunni Solestizi, L.; Bilei, G. M.; Ciangottini, D.; Fanò, L.; Lariccia, P.; Mantovani, G.; Menichelli, M.; Saha, A.; Santocchia, A.; Androsov, K.; Azzurri, P.; Bagliesi, G.; Bernardini, J.; Boccali, T.; Castaldi, R.; Ciocci, M. A.; Dell'Orso, R.; Donato, S.; Fedi, G.; Foà, L.; Giassi, A.; Grippo, M. T.; Ligabue, F.; Lomtadze, T.; Martini, L.; Messineo, A.; Palla, F.; Rizzi, A.; Savoy-Navarro, A.; Spagnolo, P.; Tenchini, R.; Tonelli, G.; Venturi, A.; Verdini, P. G.; Barone, L.; Cavallari, F.; D'Imperio, G.; Del Re, D.; Diemoz, M.; Gelli, S.; Jorda, C.; Longo, E.; Margaroli, F.; Meridiani, P.; Organtini, G.; Paramatti, R.; Preiato, F.; Rahatlou, S.; Rovelli, C.; Santanastasio, F.; Amapane, N.; Arcidiacono, R.; Argiro, S.; Arneodo, M.; Bellan, R.; Biino, C.; Cartiglia, N.; Costa, M.; Covarelli, R.; Degano, A.; Demaria, N.; Finco, L.; Kiani, B.; Mariotti, C.; Maselli, S.; Migliore, E.; Monaco, V.; Monteil, E.; Obertino, M. M.; Pacher, L.; Pastrone, N.; Pelliccioni, M.; Pinna Angioni, G. L.; Ravera, F.; Romero, A.; Ruspa, M.; Sacchi, R.; Solano, A.; Staiano, A.; Belforte, S.; Candelise, V.; Casarsa, M.; Cossutti, F.; Della Ricca, G.; Gobbo, B.; La Licata, C.; Schizzi, A.; Zanetti, A.; Kropivnitskaya, A.; Nam, S. K.; Kim, D. H.; Kim, G. N.; Kim, M. S.; Kong, D. J.; Lee, S.; Lee, S. 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V.; Baskakov, A.; Belyaev, A.; Boos, E.; Dubinin, M.; Dudko, L.; Ershov, A.; Gribushin, A.; Klyukhin, V.; Kodolova, O.; Lokhtin, I.; Miagkov, I.; Obraztsov, S.; Petrushanko, S.; Savrin, V.; Snigirev, A.; Azhgirey, I.; Bayshev, I.; Bitioukov, S.; Kachanov, V.; Kalinin, A.; Konstantinov, D.; Krychkine, V.; Petrov, V.; Ryutin, R.; Sobol, A.; Tourtchanovitch, L.; Troshin, S.; Tyurin, N.; Uzunian, A.; Volkov, A.; Adzic, P.; Cirkovic, P.; Devetak, D.; Milosevic, J.; Rekovic, V.; Alcaraz Maestre, J.; Calvo, E.; Cerrada, M.; Chamizo Llatas, M.; Colino, N.; de La Cruz, B.; Delgado Peris, A.; Escalante Del Valle, A.; Fernandez Bedoya, C.; Fernández Ramos, J. P.; Flix, J.; Fouz, M. C.; Garcia-Abia, P.; Gonzalez Lopez, O.; Goy Lopez, S.; Hernandez, J. M.; Josa, M. I.; Navarro de Martino, E.; Pérez-Calero Yzquierdo, A.; Puerta Pelayo, J.; Quintario Olmeda, A.; Redondo, I.; Romero, L.; Soares, M. S.; de Trocóniz, J. 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T.; Magini, N.; Malgeri, L.; Mannelli, M.; Martelli, A.; Masetti, L.; Meijers, F.; Mersi, S.; Meschi, E.; Moortgat, F.; Morovic, S.; Mulders, M.; Neugebauer, H.; Orfanelli, S.; Orsini, L.; Pape, L.; Perez, E.; Peruzzi, M.; Petrilli, A.; Petrucciani, G.; Pfeiffer, A.; Pierini, M.; Piparo, D.; Racz, A.; Reis, T.; Rolandi, G.; Rovere, M.; Ruan, M.; Sakulin, H.; Sauvan, J. B.; Schäfer, C.; Schwick, C.; Seidel, M.; Sharma, A.; Silva, P.; Simon, M.; Sphicas, P.; Steggemann, J.; Stoye, M.; Takahashi, Y.; Treille, D.; Triossi, A.; Tsirou, A.; Veres, G. I.; Wardle, N.; Wöhri, H. K.; Zagozdzinska, A.; Zeuner, W. D.; Bertl, W.; Deiters, K.; Erdmann, W.; Horisberger, R.; Ingram, Q.; Kaestli, H. 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C.; Apyan, A.; Barbieri, R.; Baty, A.; Bi, R.; Bierwagen, K.; Brandt, S.; Busza, W.; Cali, I. A.; Demiragli, Z.; Di Matteo, L.; Gomez Ceballos, G.; Goncharov, M.; Gulhan, D.; Iiyama, Y.; Innocenti, G. M.; Klute, M.; Kovalskyi, D.; Krajczar, K.; Lai, Y. S.; Lee, Y.-J.; Levin, A.; Luckey, P. D.; Marini, A. C.; McGinn, C.; Mironov, C.; Narayanan, S.; Niu, X.; Paus, C.; Roland, C.; Roland, G.; Salfeld-Nebgen, J.; Stephans, G. S. F.; Sumorok, K.; Tatar, K.; Varma, M.; Velicanu, D.; Veverka, J.; Wang, J.; Wang, T. W.; Wyslouch, B.; Yang, M.; Zhukova, V.; Benvenuti, A. C.; Dahmes, B.; Evans, A.; Finkel, A.; Gude, A.; Hansen, P.; Kalafut, S.; Kao, S. C.; Klapoetke, K.; Kubota, Y.; Lesko, Z.; Mans, J.; Nourbakhsh, S.; Ruckstuhl, N.; Rusack, R.; Tambe, N.; Turkewitz, J.; Acosta, J. G.; Oliveros, S.; Avdeeva, E.; Bartek, R.; Bloom, K.; Bose, S.; Claes, D. R.; Dominguez, A.; Fangmeier, C.; Gonzalez Suarez, R.; Kamalieddin, R.; Knowlton, D.; Kravchenko, I.; Meier, F.; Monroy, J.; Ratnikov, F.; Siado, J. E.; Snow, G. R.; Stieger, B.; Alyari, M.; Dolen, J.; George, J.; Godshalk, A.; Harrington, C.; Iashvili, I.; Kaisen, J.; Kharchilava, A.; Kumar, A.; Rappoccio, S.; Roozbahani, B.; Alverson, G.; Barberis, E.; Baumgartel, D.; Chasco, M.; Hortiangtham, A.; Massironi, A.; Morse, D. M.; Nash, D.; Orimoto, T.; Teixeira de Lima, R.; Trocino, D.; Wang, R.-J.; Wood, D.; Zhang, J.; Bhattacharya, S.; Hahn, K. A.; Kubik, A.; Low, J. F.; Mucia, N.; Odell, N.; Pollack, B.; Schmitt, M. H.; Sung, K.; Trovato, M.; Velasco, M.; Dev, N.; Hildreth, M.; Jessop, C.; Karmgard, D. J.; Kellams, N.; Lannon, K.; Marinelli, N.; Meng, F.; Mueller, C.; Musienko, Y.; Planer, M.; Reinsvold, A.; Ruchti, R.; Rupprecht, N.; Smith, G.; Taroni, S.; Valls, N.; Wayne, M.; Wolf, M.; Woodard, A.; Antonelli, L.; Brinson, J.; Bylsma, B.; Durkin, L. S.; Flowers, S.; Hart, A.; Hill, C.; Hughes, R.; Ji, W.; Ling, T. Y.; Liu, B.; Luo, W.; Puigh, D.; Rodenburg, M.; Winer, B. L.; Wulsin, H. W.; Driga, O.; Elmer, P.; Hardenbrook, J.; Hebda, P.; Koay, S. A.; Lujan, P.; Marlow, D.; Medvedeva, T.; Mooney, M.; Olsen, J.; Palmer, C.; Piroué, P.; Stickland, D.; Tully, C.; Zuranski, A.; Malik, S.; Barker, A.; Barnes, V. E.; Benedetti, D.; Bortoletto, D.; Gutay, L.; Jha, M. K.; Jones, M.; Jung, A. W.; Jung, K.; Miller, D. H.; Neumeister, N.; Radburn-Smith, B. C.; Shi, X.; Shipsey, I.; Silvers, D.; Sun, J.; Svyatkovskiy, A.; Wang, F.; Xie, W.; Xu, L.; Parashar, N.; Stupak, J.; Adair, A.; Akgun, B.; Chen, Z.; Ecklund, K. M.; Geurts, F. J. M.; Guilbaud, M.; Li, W.; Michlin, B.; Northup, M.; Padley, B. P.; Redjimi, R.; Roberts, J.; Rorie, J.; Tu, Z.; Zabel, J.; Betchart, B.; Bodek, A.; de Barbaro, P.; Demina, R.; Eshaq, Y.; Ferbel, T.; Galanti, M.; Garcia-Bellido, A.; Han, J.; Hindrichs, O.; Khukhunaishvili, A.; Lo, K. H.; Tan, P.; Verzetti, M.; Chou, J. P.; Contreras-Campana, E.; Ferencek, D.; Gershtein, Y.; Halkiadakis, E.; Heindl, M.; Hidas, D.; Hughes, E.; Kaplan, S.; Kunnawalkam Elayavalli, R.; Lath, A.; Nash, K.; Saka, H.; Salur, S.; Schnetzer, S.; Sheffield, D.; Somalwar, S.; Stone, R.; Thomas, S.; Thomassen, P.; Walker, M.; Foerster, M.; Riley, G.; Rose, K.; Spanier, S.; Thapa, K.; Bouhali, O.; Castaneda Hernandez, A.; Celik, A.; Dalchenko, M.; de Mattia, M.; Delgado, A.; Dildick, S.; Eusebi, R.; Gilmore, J.; Huang, T.; Kamon, T.; Krutelyov, V.; Mueller, R.; Osipenkov, I.; Pakhotin, Y.; Patel, R.; Perloff, A.; Rathjens, D.; Rose, A.; Safonov, A.; Tatarinov, A.; Ulmer, K. A.; Akchurin, N.; Cowden, C.; Damgov, J.; Dragoiu, C.; Dudero, P. R.; Faulkner, J.; Kunori, S.; Lamichhane, K.; Lee, S. W.; Libeiro, T.; Undleeb, S.; Volobouev, I.; Appelt, E.; Delannoy, A. G.; Greene, S.; Gurrola, A.; Janjam, R.; Johns, W.; Maguire, C.; Mao, Y.; Melo, A.; Ni, H.; Sheldon, P.; Tuo, S.; Velkovska, J.; Xu, Q.; Arenton, M. W.; Barria, P.; Cox, B.; Francis, B.; Goodell, J.; Hirosky, R.; Ledovskoy, A.; Li, H.; Neu, C.; Sinthuprasith, T.; Sun, X.; Wang, Y.; Wolfe, E.; Wood, J.; Xia, F.; Clarke, C.; Harr, R.; Karchin, P. E.; Kottachchi Kankanamge Don, C.; Lamichhane, P.; Sturdy, J.; Belknap, D. A.; Carlsmith, D.; Dasu, S.; Dodd, L.; Duric, S.; Gomber, B.; Grothe, M.; Herndon, M.; Hervé, A.; Klabbers, P.; Lanaro, A.; Levine, A.; Long, K.; Loveless, R.; Mohapatra, A.; Ojalvo, I.; Perry, T.; Pierro, G. A.; Polese, G.; Ruggles, T.; Sarangi, T.; Savin, A.; Sharma, A.; Smith, N.; Smith, W. H.; Taylor, D.; Verwilligen, P.; Woods, N.

2016-10-01

Searches for new physics by the CMS collaboration are interpreted in the framework of the phenomenological minimal supersymmetric standard model (pMSSM). The data samples used in this study were collected at √{s}=7 and 8 TeV and have integrated luminosities of 5.0 fb-1 and 19.5 fb-1, respectively. A global Bayesian analysis is performed, incorporating results from a broad range of CMS supersymmetry searches, as well as constraints from other experiments. Because the pMSSM incorporates several well-motivated assumptions that reduce the 120 parameters of the MSSM to just 19 parameters defined at the electroweak scale, it is possible to assess the results of the study in a relatively straightforward way. Approximately half of the model points in a potentially accessible subspace of the pMSSM are excluded, including all pMSSM model points with a gluino mass below 500 GeV, as well as models with a squark mass less than 300 GeV. Models with chargino and neutralino masses below 200 GeV are disfavored, but no mass range of model points can be ruled out based on the analyses considered. The nonexcluded regions in the pMSSM parameter space are characterized in terms of physical processes and key observables, and implications for future searches are discussed. [Figure not available: see fulltext.

Suspended mid-infrared fiber-to-chip grating couplers for SiGe waveguides

NASA Astrophysics Data System (ADS)

Favreau, Julien; Durantin, Cédric; Fédéli, Jean-Marc; Boutami, Salim; Duan, Guang-Hua

2016-03-01

Silicon photonics has taken great importance owing to the applications in optical communications, ranging from short reach to long haul. Originally dedicated to telecom wavelengths, silicon photonics is heading toward circuits handling with a broader spectrum, especially in the short and mid-infrared (MIR) range. This trend is due to potential applications in chemical sensing, spectroscopy and defense in the 2-10 μm range. We previously reported the development of a MIR photonic platform based on buried SiGe/Si waveguide with propagation losses between 1 and 2 dB/cm. However the low index contrast of the platform makes the design of efficient grating couplers very challenging. In order to achieve a high fiber-to-chip efficiency, we propose a novel grating coupler structure, in which the grating is locally suspended in air. The grating has been designed with a FDTD software. To achieve high efficiency, suspended structure thicknesses have been jointly optimized with the grating parameters, namely the fill factor, the period and the grating etch depth. Using the Efficient Global Optimization (EGO) method we obtained a configuration where the fiber-to-waveguide efficiency is above 57 %. Moreover the optical transition between the suspended and the buried SiGe waveguide has been carefully designed by using an Eigenmode Expansion software. Transition efficiency as high as 86 % is achieved.

Thermal dileptons in high-energy nuclear collisions

NASA Astrophysics Data System (ADS)

Damjanovic, Sanja

2009-04-01

Clear signs of excess dileptons above the known sources have been found at the SPS for a long time. However, a real clarification of these observations was only recently achieved by NA60, measuring dimuons with unprecedented precision in 158A GeV In-In collisions. The excess mass spectrum in the region M<1 GeV is consistent with a dominant contribution from π+π-→ρ→μ+μ- annihilation. The associated ρ spectral function shows a strong broadening, but essentially no shift in mass. In the region M>1 GeV, the excess is found to be prompt, not due to enhanced charm production. The inverse slope parameter T associated with the transverse momentum spectra rises with mass up to the ρ, followed by a sudden decline above. While the initial rise, coupled to a hierarchy in hadron freeze-out, points to radial flow of a hadronic decay source, the decline above signals a transition to a low-flow source, presumably of partonic origin. The mass spectra show a steep rise towards low masses characteristic of Planck-like radiation. The polarization of the excess referred to the Collins Soper frame is found to be isotropic. All observations are consistent with a global interpretation of the excess as thermal radiation. We conclude with a short discussion of a possible link to direct photons.

Evaluation of GeO desorption behavior in the metalGeO(2)Ge structure and its improvement of the electrical characteristics.

PubMed

Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

2010-06-15

The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metalGeO(2)Ge capacitors fabricated by thermal oxidation has been investigated. In the metalGeO(2)Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metalGeO(2)Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO(2)Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface.

Ge/graded-SiGe multiplication layers for low-voltage and low-noise Ge avalanche photodiodes on Si

NASA Astrophysics Data System (ADS)

Miyasaka, Yuji; Hiraki, Tatsurou; Okazaki, Kota; Takeda, Kotaro; Tsuchizawa, Tai; Yamada, Koji; Wada, Kazumi; Ishikawa, Yasuhiko

2016-04-01

A new structure is examined for low-voltage and low-noise Ge-based avalanche photodiodes (APDs) on Si, where a Ge/graded-SiGe heterostructure is used as the multiplication layer of a separate-absorption-carrier-multiplication structure. The Ge/SiGe heterojunction multiplication layer is theoretically shown to be useful for preferentially enhancing impact ionization for photogenerated holes injected from the Ge optical-absorption layer via the graded SiGe, reflecting the valence band discontinuity at the Ge/SiGe interface. This property is effective not only for the reduction of operation voltage/electric field strength in Ge-based APDs but also for the reduction of excess noise resulting from the ratio of the ionization coefficients between electrons and holes being far from unity. Such Ge/graded-SiGe heterostructures are successfully fabricated by ultrahigh-vacuum chemical vapor deposition. Preliminary pin diodes having a Ge/graded-SiGe multiplication layer act reasonably as photodetectors, showing a multiplication gain larger than those for diodes without the Ge/SiGe heterojunction.

Structural Analyses of Phase Stability in Amorphous and Partially Crystallized Ge-Rich GeTe Films Prepared by Atomic Layer Deposition.

PubMed

Gwon, Taehong; Mohamed, Ahmed Yousef; Yoo, Chanyoung; Park, Eui-Sang; Kim, Sanggyun; Yoo, Sijung; Lee, Han-Koo; Cho, Deok-Yong; Hwang, Cheol Seong

2017-11-29

The local bonding structures of Ge x Te 1-x (x = 0.5, 0.6, and 0.7) films prepared through atomic layer deposition (ALD) with Ge(N(Si(CH 3 ) 3 ) 2 ) 2 and ((CH 3 ) 3 Si) 2 Te precursors were investigated using Ge K-edge X-ray absorption spectroscopy (XAS). The results of the X-ray absorption fine structure analyses show that for all of the compositions, the as-grown films were amorphous with a tetrahedral Ge coordination of a mixture of Ge-Te and Ge-Ge bonds but without any signature of Ge-GeTe decomposition. The compositional evolution in the valence band electronic structures probed through X-ray photoelectron spectroscopy suggests a substantial chemical influence of additional Ge on the nonstoichiometric GeTe. This implies that the ALD process can stabilize Ge-abundant bonding networks like -Te-Ge-Ge-Te- in amorphous GeTe. Meanwhile, the XAS results on the Ge-rich films that had undergone post-deposition annealing at 350 °C show that the parts of the crystalline Ge-rich GeTe became separated into Ge crystallites and rhombohedral GeTe in accordance with the bulk phase diagram, whereas the disordered GeTe domains still remained, consistent with the observations of transmission electron microscopy and Raman spectroscopy. Therefore, amorphousness in GeTe may be essential for the nonsegregated Ge-rich phases and the low growth temperature of the ALD enables the achievement of the structurally metastable phases.

The Ho-Ni-Ge system: Isothermal section and new rare-earth nickel germanides

NASA Astrophysics Data System (ADS)

Morozkin, A. V.; Knotko, A. V.; Yapaskurt, V. O.; Yuan, Fang; Mozharivskyj, Y.; Pani, M.; Provino, A.; Manfrinetti, P.

2015-05-01

The Ho-Ni-Ge system has been investigated at 1070 K and up to 60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi5Ge3 (YNi5Si3-type), HoNi2Ge2 (CeAl2Ga2-type), Ho2NiGe6 (Ce2CuGe6-type), HoNiGe3 (SmNiGe3-type), HoNi0.2÷0.6Ge2 (CeNiSi2-type), Ho37÷34Ni6÷24Ge57÷42 (AlB2-type), HoNiGe (TiNiSi-type), Ho3NiGe2 (La3NiGe2-type), the ternary system contains four new compounds: Ho3Ni11Ge4 (Sc3Ni11Ge4-type), HoNi3Ge2 (ErNi3Ge2-type), Ho3Ni2Ge3 (Hf3Ni2Si3-type) and Ho5Ni2Ge3 (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho2Ni17, HoNi5, HoNi7, HoNi3, HoNi2, HoNi and Ho2Ge3, but no detectable solubility was found for the other binary compounds in the Ho-Ni-Ge system. Based on the magnetization measurements, the HoNi5Ge3, HoNi3Ge2 and Ho3Ni11Ge4 (and isostructural {Tb, Dy}3Ni11Ge4) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho3Ni2Ge3 exhibits an antiferromagnetic transition at 7 K. Additionally, the crystal structure of the new isostructural phases {Y, Yb}Ni3Ge2 (ErNi3Ge2-type), Er3Ni11Ge4 (Sc3Ni11Ge4-type) and {Y, Tb, Dy, Er, Tm}3Ni2Ge3 (Hf3Ni2Si3-type) has been also investigated.

Finding gene regulatory network candidates using the gene expression knowledge base.

PubMed

Venkatesan, Aravind; Tripathi, Sushil; Sanz de Galdeano, Alejandro; Blondé, Ward; Lægreid, Astrid; Mironov, Vladimir; Kuiper, Martin

2014-12-10

Network-based approaches for the analysis of large-scale genomics data have become well established. Biological networks provide a knowledge scaffold against which the patterns and dynamics of 'omics' data can be interpreted. The background information required for the construction of such networks is often dispersed across a multitude of knowledge bases in a variety of formats. The seamless integration of this information is one of the main challenges in bioinformatics. The Semantic Web offers powerful technologies for the assembly of integrated knowledge bases that are computationally comprehensible, thereby providing a potentially powerful resource for constructing biological networks and network-based analysis. We have developed the Gene eXpression Knowledge Base (GeXKB), a semantic web technology based resource that contains integrated knowledge about gene expression regulation. To affirm the utility of GeXKB we demonstrate how this resource can be exploited for the identification of candidate regulatory network proteins. We present four use cases that were designed from a biological perspective in order to find candidate members relevant for the gastrin hormone signaling network model. We show how a combination of specific query definitions and additional selection criteria derived from gene expression data and prior knowledge concerning candidate proteins can be used to retrieve a set of proteins that constitute valid candidates for regulatory network extensions. Semantic web technologies provide the means for processing and integrating various heterogeneous information sources. The GeXKB offers biologists such an integrated knowledge resource, allowing them to address complex biological questions pertaining to gene expression. This work illustrates how GeXKB can be used in combination with gene expression results and literature information to identify new potential candidates that may be considered for extending a gene regulatory network.

Nutrient Digestibility and Metabolizable Energy Content of Mucuna pruriens Whole Pods Fed to Growing Pelibuey Lambs

PubMed Central

Loyra-Tzab, Enrique; Sarmiento-Franco, Luis Armando; Sandoval-Castro, Carlos Alfredo; Santos-Ricalde, Ronald Herve

2013-01-01

The nutrient digestibility, nitrogen balance and in vivo metabolizable energy supply of Mucuna pruriens whole pods fed to growing Pelibuey lambs was investigated. Eight Pelibuey sheep housed in metabolic crates were fed increasing levels of Mucuna pruriens pods: 0 (control), 100 (Mucuna100), 200 (Mucuna200) and 300 (Mucuna300) g/kg dry matter. A quadratic (p<0.002) effect was observed for dry matter (DM), neutral detergent fibre (aNDF), nitrogen (N) and gross energy (GE) intakes with higher intakes in the Mucuna100 and Mucuna200 treatments. Increasing M. pruriens in the diets had no effect (p>0.05) on DM and GE apparent digestibility (p<0.05). A linear reduction in N digestibility and N retention was observed with increasing mucuna pod level. This effect was accompanied by a quadratic effect (p<0.05) on fecal-N and N-balance which were higher in the Mucuna100 and Mucuna200 treatments. Urine-N excretion, GE retention and dietary estimated nutrient supply (metabolizable protein and metabolizable energy) were not affected (p>0.05). DM, N and GE apparent digestibility coefficient of M. pruriens whole pods obtained through multiple regression equations were 0.692, 0.457, 0.654 respectively. In vivo DE and ME content of mucuna whole pod were estimated in 11.0 and 9.7 MJ/kg DM. It was concluded that whole pods from M. pruriens did not affect nutrient utilization when included in an mixed diet up to 200 g/kg DM. This is the first in vivo estimation of mucuna whole pod ME value for ruminants. PMID:25049876

Practical routes to (SiH₃)₃P: applications in group IV semiconductor activation and in group III-V molecular synthesis.

PubMed

Tice, Jesse B; Chizmeshya, A V G; Tolle, J; D' Costa, V R; Menendez, J; Kouvetakis, J

2010-05-21

The (SiH₃)₃P hydride is introduced as a practical source for n-doping of group IV semiconductors and as a highly-reactive delivery agent of -(SiH₃)₂P functionalities in exploratory synthesis. In contrast to earlier methods, the compound is produced here in high purity quantitative yields via a new single-step method based on reactions of SiH₃Br and (Me₃Sn)₃P, circumventing the need for toxic and unstable starting materials. As an initial demonstration of its utility we synthesized monosubstituted Me₂M-P(SiH₃)₂ (M = Al, Ga, In) derivatives of Me₃M containing the (SiH₃)₂P ligand for the first time, in analogy to the known Me₂M-P(SiMe₃)₂ counterparts. A dimeric structure of Me₂M-P(SiH₃)₂ is proposed on the basis of spectroscopic characterizations and quantum chemical simulations. Next, in the context of materials synthesis, the (SiH₃)₃P compound was used to dope germanium for the first time by building a prototype p(++)Si(100)/i-Ge/n-Ge photodiode structure. The resultant n-type Ge layers contained active carrier concentrations of 3-4 × 10¹⁹ atoms cm⁻³ as determined by spectroscopic ellipsometry and confirmed by SIMS. Strain analysis using high resolution XRD yielded a Si content of 4 × 10²⁰ atoms cm⁻³ in agreement with SIMS and within the range expected for incorporating Si₃P type units into the diamond cubic Ge matrix. Extensive characterizations for structure, morphology and crystallinity indicate that the Si co-dopant plays essentially a passive role and does not compromise the device quality of the host material nor does it fundamentally alter its optical properties.

Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures.

PubMed

Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

2017-01-01

Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, [Formula: see text]100[Formula: see text], is better than the [Formula: see text]111[Formula: see text] crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity engineering in bulk and nanostructures to produce high-performance thermoelectric materials.

Thermal conductivity engineering of bulk and one-dimensional Si-Ge nanoarchitectures

PubMed Central

Kandemir, Ali; Ozden, Ayberk; Cagin, Tahir; Sevik, Cem

2017-01-01

Various theoretical and experimental methods are utilized to investigate the thermal conductivity of nanostructured materials; this is a critical parameter to increase performance of thermoelectric devices. Among these methods, equilibrium molecular dynamics (EMD) is an accurate technique to predict lattice thermal conductivity. In this study, by means of systematic EMD simulations, thermal conductivity of bulk Si-Ge structures (pristine, alloy and superlattice) and their nanostructured one dimensional forms with square and circular cross-section geometries (asymmetric and symmetric) are calculated for different crystallographic directions. A comprehensive temperature analysis is evaluated for selected structures as well. The results show that one-dimensional structures are superior candidates in terms of their low lattice thermal conductivity and thermal conductivity tunability by nanostructuring, such as by diameter modulation, interface roughness, periodicity and number of interfaces. We find that thermal conductivity decreases with smaller diameters or cross section areas. Furthermore, interface roughness decreases thermal conductivity with a profound impact. Moreover, we predicted that there is a specific periodicity that gives minimum thermal conductivity in symmetric superlattice structures. The decreasing thermal conductivity is due to the reducing phonon movement in the system due to the effect of the number of interfaces that determine regimes of ballistic and wave transport phenomena. In some nanostructures, such as nanowire superlattices, thermal conductivity of the Si/Ge system can be reduced to nearly twice that of an amorphous silicon thermal conductivity. Additionally, it is found that one crystal orientation, <100>, is better than the <111> crystal orientation in one-dimensional and bulk SiGe systems. Our results clearly point out the importance of lattice thermal conductivity engineering in bulk and nanostructures to produce high-performance thermoelectric materials. PMID:28469733

Evaluation of GeO desorption behavior in the metal∕GeO2∕Ge structure and its improvement of the electrical characteristics

PubMed Central

Oniki, Yusuke; Koumo, Hideo; Iwazaki, Yoshitaka; Ueno, Tomo

2010-01-01

The relation between germanium monoxide (GeO) desorption and either improvement or deterioration in electrical characteristics of metal∕GeO2∕Ge capacitors fabricated by thermal oxidation has been investigated. In the metal∕GeO2∕Ge stack, two processes of GeO desorption at different sites and at different temperatures were observed by thermal desorption spectroscopy measurements. The electrical characteristics of as-oxidized metal∕GeO2∕Ge capacitors shows a large flat-band voltage shift and minority carrier generation due to the GeO desorption from the GeO2∕Ge interface during oxidation of Ge substrates. On the other hand, the electrical properties were drastically improved by a postmetallization annealing at low temperature resulting in a metal catalyzed GeO desorption from the top interface. PMID:20644659

Grissom AFB, Indiana. Revised Uniform Summary of Surface Weather Observations. Parts A-F.

DTIC Science & Technology

1987-11-01

PERIOD OF RECORD: 78-B7 MONTH: MAR HOUSILSTI: ISO -1700 CE ILIOO V|SIBIL1TV IN SIATUTE MILES IN I GE GE GE GE GE GE GE GE GE GE GE GE GE GC GE GE FEET I...77.9 77.9 77.9 77.9 77.9 77.9 77.9 GE200:52 14 748 7.3 7. 79:1 79.4 79.4 79.6 79:7 79:7 79:7 79.7 79.7 79.7 79.74E 27001 25. 7 T4.7 78.2, 91.1 62.4...82175. ’.1. 1 *- I. p ’X k,’ 33U-CS I SD 13.712 15.2?’. 51.51. 10 09? 1k I-j6; b.Z* b.6i k.450,~ 9 Ia..’ I * ISO ? 0S1 921 646 #;v 9: 𔄃 $0 49 vs t7 * P LAN

Mesoporous Ge/GeO2/Carbon Lithium-Ion Battery Anodes with High Capacity and High Reversibility.

PubMed

Hwang, Jongkook; Jo, Changshin; Kim, Min Gyu; Chun, Jinyoung; Lim, Eunho; Kim, Seongseop; Jeong, Sanha; Kim, Youngsik; Lee, Jinwoo

2015-05-26

We report mesoporous composite materials (m-GeO2, m-GeO2/C, and m-Ge-GeO2/C) with large pore size which are synthesized by a simple block copolymer directed self-assembly. m-Ge/GeO2/C shows greatly enhanced Coulombic efficiency, high reversible capacity (1631 mA h g(-1)), and stable cycle life compared with the other mesoporous and bulk GeO2 electrodes. m-Ge/GeO2/C exhibits one of the highest areal capacities (1.65 mA h cm(-2)) among previously reported Ge- and GeO2-based anodes. The superior electrochemical performance in m-Ge/GeO2/C arises from the highly improved kinetics of conversion reaction due to the synergistic effects of the mesoporous structures and the conductive carbon and metallic Ge.

Insight into unusual impurity absorbability of GeO(2) in GeO(2)∕Ge stacks.

PubMed

Ogawa, Shingo; Suda, Taichi; Yamamoto, Takashi; Kutsuki, Katsuhiro; Hideshima, Iori; Hosoi, Takuji; Shimura, Takayoshi; Watanabe, Heiji

2011-10-03

Adsorbed species and its diffusion behaviors in GeO(2)∕Ge stacks, which are future alternative metal-oxide-semiconductor (MOS) materials, have been investigated using various physical analyses. We clarified that GeO(2) rapidly absorbs moisture in air just after its exposure. After the absorbed moisture in GeO(2) reaches a certain limit, the GeO(2) starts to absorb some organic molecules, which is accompanied by a structural change in GeO(2) to form a partial carbonate or hydroxide. We also found that the hydrogen distribution in GeO(2) shows intrinsic characteristics, indicative of different diffusion behaviors at the surface and at the GeO(2)∕Ge interface. Because the impurity absorbability of GeO(2) has a great influence on the electrical properties in Ge-MOS devices, these results provide valuable information in realizing high quality GeO(2)∕Ge stacks for the actual use of Ge-MOS technologies.

Formation of alternating interfacial layers in Au-12Ge/Ni joints

PubMed Central

Lin, Shih-kang; Tsai, Ming-yueh; Tsai, Ping-chun; Hsu, Bo-hsun

2014-01-01

Au-Ge alloys are promising materials for high-power and high-frequency packaging, and Ni is frequently used as diffusion barriers. This study investigates interfacial reactions in Au-12Ge/Ni joints at 300°C and 400°C. For the reactions at 300°C, typical interfacial morphology was observed and the diffusion path was (Au) + (Ge)/NiGe/Ni5Ge3/Ni. However, an interesting phenomenon – the formation of (Au,Ni,Ge)/NiGe alternating layers – was observed for the reactions at 400°C. The diffusion path across the interface was liquid/(Au,Ni,Ge)/NiGe/···/(Au,Ni,Ge)/NiGe/Ni2Ge/Ni. The periodic thermodynamic instability at the NiGe/Ni2Ge interface caused the subsequent nucleation of new (Au,Ni,Ge)/NiGe pairs. The thermodynamic foundation and mechanism of formation of the alternating layers are elaborated in this paper. PMID:24690992

Ultrasonic Bat Deterrent Technology

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kinzie, Kevin; Rominger, Kathryn M.

The project objective was to advance the development and testing of an Near commercial bat-deterrent system with a goal to increase the current GE deterrent system effectiveness to over 50% with broad species applicability. Additionally, the research supported by this program has provided insights into bat behavior and ultrasonic deterrent design that had not previously been explored. Prior research and development had demonstrated the effectiveness of a commercial-grade, air-powered, ultrasonic bat deterrent to be between 30-50% depending upon the species of bat. However, the previous research provided limited insight into the behavioral responses of bats in the presence of ultrasonicmore » deterrent sound fields that could be utilized to improve effectiveness. A unique bat flight room was utilized to observe the behavioral characteristics of bats in the presence of ultrasonic sound fields. Behavioral testing in the bat flight facility demonstrated that ultrasonic sounds similar to those produced by the GE deterrent influenced the activities and behaviors, primarily those associated with foraging, of the species exposed. The study also indicated that continuous and pulsing ultrasonic signals had a similar effect on the bats, and confirmed that as ultrasonic sounds attenuate, their influence on the bats’ activities and behavior decreases. Ground testing at Wolf Ridge Wind, LLC and Shawnee National Forest assessed both continuous and pulsing deterrent signals emitted from the GE deterrent system and further enhanced the behavioral understanding of bats in the presence of the deterrent. With these data and observations, the existing 4-nozzle continuous, or steady, emission ultrasonic system was redesigned to a 6-nozzle system that could emit a pulsing signal covering a larger air space around a turbine. Twelve GE 1.6-100 turbines were outfitted with the deterrent system and a formal three-month field study was performed using daily carcass searches beneath the 12 turbines. Additionally, a unique 3D bat flight path visualization system was utilized to monitor for and identify any changes in bat activity caused by the operation of the deterrent system. Both the carcass search and flight path visualization data indicated that the pulsed deterrent system was effective, but not more effective, than the steady system tested in prior years. The pulsed deterrent system was effective at reducing bat fatalities by 38% for all species and 54% effective at reducing fatalities if Eastern Red bats were excluded from the data. However, an unanticipated byproduct of the pulsing system was the emission of intermittent water vapor from the deterrent devices due to the air compression process that powered the devices. This water vapor may have altered the ultrasonic signal and obscured the results in an unknown way. While a qualitative analysis of the effect of the water vapor on the deterrent signal had indicated there was not dramatic change in the expected ultrasonic signal, it was not possible to conclusively determine if the pulse signal would have been more effective in the absence of the water vapor.« less

Carbon economy of sour orange in response to different Glomus spp.

PubMed

Graham, J. H.; Drouillard, D. L.; Hodge, N. C.

1996-01-01

Vesicular-arbuscular mycorrhizal (M) fungal colonization, growth, and nonstructural carbohydrate status of sour orange (Citrus aurantium L.) seedlings were compared at low- and high-phosphorus (P) supply following inoculation with four Glomus isolates: G. intraradices (Gi, FL208), G. etunicatum (Ge, UT316), G. claroideum (Gc, SC186), and Glomus sp. (G329, FL906). Nonmycorrhizal (NM) seedlings served as controls. At low-P supply, increases in incidence of M colonization, vesicles and accumulation of fungal fatty acid 16:1omega(5)C in roots were most rapid for G329-inoculated seedlings, followed closely by Gi- and Gc-inoculated seedlings. Glomus etunicatum was a less aggressive colonizer and produced lower rates of fungal fatty acid accumulation in seedling roots than the other Glomus species. Nonmycorrhizal and Ge-inoculated seedlings had lower P status and growth rates than seedlings inoculated with Gi or G329. Glomus claroideum increased seedling P status, but growth rate was lower than for seedlings colonized by Gi or G329, suggesting higher belowground costs for Gc colonization. In P-sufficient roots colonized by Gi, Gc, or G329, starch and ketone sugar concentrations were lower than in P-deficient NM and Ge-inoculated plants. Under conditions of high-P supply where mycorrhizae provided no P benefit to the seedlings, colonization by Gc, Gi, and G329 was delayed and reduced compared to that at low-P supply; however, the relative colonization rates among Glomus spp. were similar. Colonization by Ge was not detected in roots until 64 days after inoculation. Compared to NM seedlings, growth rates of mycorrhizal seedlings were reduced by the three aggressive fungi but not by the less aggressive Ge. After 64 days, starch and ketone sugar concentrations were lower in fibrous roots colonized by Gc, Gi, and G329 than in NM roots, indicating greater utilization of nonstructural carbohydrates in roots colonized by the aggressive fungi. After 49 days, colonization by the aggressive fungi increased root biomass allocation which may have contributed to the lower growth rate of mycorrhizal seedlings compared to NM seedlings. Thus, Glomus spp. that were aggressive colonizers of roots at low-P supply were also aggressive colonizers at high-P supply, resulting in greater belowground C costs and growth depression compared with the less aggressive colonizer, Ge.

Thermodynamic modeling of the Ge-La binary system

NASA Astrophysics Data System (ADS)

Liu, Miao; Li, Chang-rong; Du, Zhen-min; Guo, Cui-ping; Niu, Chun-ju

2012-08-01

The Ge-La binary system was critically assessed by means of the calculation of phase diagram (CALPHAD) technique. The associate model was used for the liquid phase containing the constituent species Ge, La, Ge3La5, and Ge1.7La. The terminal solid solution diamond-(Ge) with a small solubility of La was described using the substitutional model, in which the excess Gibbs energy was formulated with the Redlich-Kister equation. The compounds with homogeneity ranges, α(Ge1.7La), β(Ge1.7La), and (GeLa), were modeled using two sublattices as α(Ge,La)1.7La, β(Ge,La)1.7La, and (Ge,La)(Ge,La), respectively. The intermediate phases with no solubility ranges, Ge4La5, Ge3La4, Ge3La5, and GeLa3, were treated as stoichiometric compounds. The three allotropic modifications of La, dhcp-La, fcc-La, and bcc-La, were kept as pure element phases since no solubility of Ge in La was reported. A set of self-consistent thermodynamic parameters of the Ge-La binary system was obtained. The calculation results agree well with the available experimental data from literatures.

Resonant power supplies for a rapid-cycling accelerator

NASA Astrophysics Data System (ADS)

Karady, G.; Thiessen, H. A.; Schneider, E. J.

1988-10-01

A resonant power supply has been proposed as an efficient power supply for a future 60-GeV, Kaon-producing accelerator. The engineering design of the electric system of the main-ring power supplies is described. It is shown that the resonant power supply can be built with standard commercially available components. The most critical component is the bypass switch, which requires gate-turn off thyristors, connected in parallel. Standard metal-clad switchgear can be used for the AC system. The resonant power supplies can be fed directly from the 115-kV utility network, but the resonance power supplies draw pulse loads from the utility network. This pulse may produce disturbances. AC filter and reactive power compensation is needed for economical operation.

Observation of Global Hyperon Polarization in Ultrarelativistic Heavy-Ion Collisions

NASA Astrophysics Data System (ADS)

Upsal, Isaac; STAR Collaboration

2017-11-01

Collisions between heavy nuclei at ultra-relativistic energies form a color-deconfined state of matter known as the quark-gluon plasma. This state is well described by hydrodynamics, and non-central collisions are expected to produce a fluid characterized by strong vorticity in the presence of strong external magnetic fields. The STAR Collaboration at Brookhaven National Laboratory's Relativistic Heavy Ion Collider (RHIC) has measured collisions between gold nuclei at center of mass energies √{sNN} = 7.7- 200 GeV. We report the first observation of globally polarized Λ and Λ bar hyperons, aligned with the angular momentum of the colliding system. These measurements provide important information on partonic spin-orbit coupling, the vorticity of the quark-gluon plasma, and the magnetic field generated in the collision.

The Ho–Ni–Ge system: Isothermal section and new rare-earth nickel germanides

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morozkin, A.V., E-mail: morozkin@tech.chem.msu.ru; Knotko, A.V.; Yapaskurt, V.O.

2015-05-15

The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho by X-ray diffraction and microprobe analyses. Besides the eight known compounds, HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{submore » 3} (unknown structure). Quasi-binary solid solutions were observed at 1070 K for Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3}, but no detectable solubility was found for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Graphical abstract: The Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at.% Ho by X-ray and microprobe analyses. Besides the eight known compounds, i.e. HoNi{sub 5}Ge{sub 3} (YNi{sub 5}Si{sub 3}-type), HoNi{sub 2}Ge{sub 2} (CeAl{sub 2}Ga{sub 2}-type), Ho{sub 2}NiGe{sub 6} (Ce{sub 2}CuGe{sub 6}-type), HoNiGe{sub 3} (SmNiGe{sub 3}-type), HoNi{sub 0.2÷0.6}Ge{sub 2} (CeNiSi{sub 2}-type), Ho{sub 37÷34}Ni{sub 6÷24}Ge{sub 57÷42} (AlB{sub 2}-type), HoNiGe (TiNiSi-type), Ho{sub 3}NiGe{sub 2} (La{sub 3}NiGe{sub 2}-type), the ternary system contains four new compounds: Ho{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type), HoNi{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Ho{sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) and ~Ho{sub 5}Ni{sub 2}Ge{sub 3} (unknown structure). Quasi-binary solid solutions were found to form at 1070 K from the binary Ho{sub 2}Ni{sub 17}, HoNi{sub 5}, HoNi{sub 7}, HoNi{sub 3}, HoNi{sub 2}, HoNi and Ho{sub 2}Ge{sub 3} compounds, while no detectable solubility was observed for the other binary compounds in the Ho–Ni–Ge system. Based on the magnetization measurements, the HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2} and Ho{sub 3}Ni{sub 11}Ge{sub 4} (and isostructural (Tb, Dy){sub 3}Ni{sub 11}Ge{sub 4}) compounds have been found to show paramagnetic behavior down to 5 K, whereas Ho{sub 3}Ni{sub 2}Ge{sub 3} exhibits an antiferromagnetic transition at ~7 K. Additionally, the crystal structure of the new isostructural phases (Y, Yb)Ni{sub 3}Ge{sub 2} (ErNi{sub 3}Ge{sub 2}-type), Er{sub 3}Ni{sub 11}Ge{sub 4} (Sc{sub 3}Ni{sub 11}Ge{sub 4}-type) and (Y, Tb, Dy, Er, Tm){sub 3}Ni{sub 2}Ge{sub 3} (Hf{sub 3}Ni{sub 2}Si{sub 3}-type) has been also investigated. - Highlights: • Ho–Ni–Ge system has been investigated at 1070 K and up to ~60 at% Ho. • Eight known ternary holmium nickel germanides were confirmed in Ho–Ni–Ge. • Four new holmium nickel germanides were detected in Ho–Ni–Ge. • Eight new rare earth nickel germanides were detected in (Y, Tb, Dy, Er–Yb)–Ni–Ge. • HoNi{sub 5}Ge{sub 3}, HoNi{sub 3}Ge{sub 2},(Tb, Dy, Ho){sub 3}Ni{sub 11}Ge{sub 4} and Ho{sub 3}Ni{sub 2}Ge{sub 3} are paramagnet down to 5–7 K.« less

Ferromagnetic germanide in Ge nanowire transistors for spintronics application.

PubMed

Tang, Jianshi; Wang, Chiu-Yen; Hung, Min-Hsiu; Jiang, Xiaowei; Chang, Li-Te; He, Liang; Liu, Pei-Hsuan; Yang, Hong-Jie; Tuan, Hsing-Yu; Chen, Lih-Juann; Wang, Kang L

2012-06-26

To explore spintronics applications for Ge nanowire heterostructures formed by thermal annealing, it is critical to develop a ferromagnetic germanide with high Curie temperature and take advantage of the high-quality interface between Ge and the formed ferromagnetic germanide. In this work, we report, for the first time, the formation and characterization of Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire transistors, in which the room-temperature ferromagnetic germanide was found through the solid-state reaction between a single-crystalline Ge nanowire and Mn contact pads upon thermal annealing. The atomically clean interface between Mn(5)Ge(3) and Ge with a relatively small lattice mismatch of 10.6% indicates that Mn(5)Ge(3) is a high-quality ferromagnetic contact to Ge. Temperature-dependent I-V measurements on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) nanowire heterostructure reveal a Schottky barrier height of 0.25 eV for the Mn(5)Ge(3) contact to p-type Ge. The Ge nanowire field-effect transistors built on the Mn(5)Ge(3)/Ge/Mn(5)Ge(3) heterostructure exhibit a high-performance p-type behavior with a current on/off ratio close to 10(5), and a hole mobility of 150-200 cm(2)/(V s). Temperature-dependent resistance of a fully germanided Mn(5)Ge(3) nanowire shows a clear transition behavior near the Curie temperature of Mn(5)Ge(3) at about 300 K. Our findings of the high-quality room-temperature ferromagnetic Mn(5)Ge(3) contact represent a promising step toward electrical spin injection into Ge nanowires and thus the realization of high-efficiency spintronic devices for room-temperature applications.

Water-vapor-enhanced growth of Ge GeOx core shell nanowires and Si1-xGexOy nanowires

NASA Astrophysics Data System (ADS)

Hsu, Ting-Jui; Ko, Chih-Yuan; Lin, Wen-Tai

2007-09-01

The effects of moist Ar on the growth of Ge-GeOx core-shell nanowires (Ge-GeOx NWs) and Si1-xGexOy nanowires (SiGeONWs) on Si substrates without adding a metal catalyst via the carbothermal reduction of GeO2 powders at 1100 °C were studied. No significant nanowires were grown in dry Ar at a flow rate of 100-300 sccm until a bit of water in the range of 0.5-2 ml was loaded into the furnace. More water suppressed the growth of nanowires because of the exhaustion of more graphite powder. The growth of Ge-GeOx NWs and SiGeONWs follows the vapor-solid and vapor-liquid-solid processes, respectively. The present study showed that the water vapor serves as an oxidizer as well as a reducer at 1100 °C in enhancing the growth of SiGeONWs and Ge-GeOx NWs, respectively. The growth mechanisms of Ge-GeOx NWs and SiGeONWs are also discussed.

Temporal and spatial variation in the fouling of silicone coatings in Pearl Harbor, Hawaii.

PubMed

Holm, E R; Nedved, B T; Phillips, N; Deangelis, K L; Hadfield, M G; Smith, C M

2000-01-01

An antifouling or foul-release coating cannot be globally effective if it does not perform well in a range of environmental conditions, against a diversity of fouling organisms. From 1996 to 1998, the field test sites participating in the United States Navy's Office of Naval Research 6.2 Biofouling program examined global variation in the performance of 3 silicone foul-release coatings, viz. GE RTV11, Dow Corning RTV 3140, and Intersleek (International Coatings Ltd), together with a control anticorrosive coating (Ameron Protective Coatings F-150 series). At the University of Hawaii's test site in Pearl Harbor, significant differences were observed among the coatings in the rate of accumulation of fouling. The control coating failed rapidly; after 180-220 d immersion a community dominated by molluscs and sponges developed that persisted for the remainder of the experiment. Fouling of the GE and Dow Corning silicone coatings was slower, but eventually reached a similar community structure and coverage as the control coatings. The Intersleek coating remained lightly fouled throughout the experiment. Spatial variation in the structure of the community fouling the coatings was observed, but not in the extent of fouling. The rate of accumulation of fouling reflected differences among the coatings in adhesion of the tubeworm Hydroides elegans. The surface properties of these coatings may have affected the rate of fouling and the structure of the fouling community through their influence on larval settlement and subsequent interactions with other residents, predators, and the physical environment.

Enhancement of thermal stability and water resistance in yttrium-doped GeO{sub 2}/Ge gate stack

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Hyun Lee, Choong; Zhang, Wenfeng

2014-03-03

We have systematically investigated the material and electrical properties of yttrium-doped GeO{sub 2} (Y-GeO{sub 2}) on Germanium (Ge). A significant improvement of both thermal stability and water resistance were demonstrated by Y-GeO{sub 2}/Ge stack, compared to that of pure GeO{sub 2}/Ge stack. The excellent electrical properties of Y-GeO{sub 2}/Ge stacks with low D{sub it} were presented as well as enhancement of dielectric constant in Y-GeO{sub 2} layer, which is beneficial for further equivalent oxide thickness scaling of Ge gate stack. The improvement of thermal stability and water resistance are discussed both in terms of the Gibbs free energy lowering andmore » network modification of Y-GeO{sub 2}.« less

Design and performance of the spin asymmetries of the nucleon experiment

DOE PAGES

Maxwell, J. D.; Armstrong, W. R.; Choi, S.; ...

2018-03-01

The Spin Asymmetries of the Nucleon Experiment (SANE) performed inclusive, double-polarized electron scattering measurements of the proton at the Continuous Electron Beam Facility at Jefferson Lab. A novel detector array observed scattered electrons of four-momentum transfer 2.5 < Q 2 < 6.5 GeV 2 and Bjorken scaling 0.3 < x < 0.8 from initial beam energies of 4.7 and 5.9 GeV. Employing a polarized proton target which could be rotated with respect to the incident electron beam, both parallel and near perpendicular spin asymmetries were measured, allowing model-independent access to transverse polarization observables A 1, A 2, g 1, gmore » 2 and moment d 2 of the proton. This article summarizes the operation and performance of the polarized target, polarized electron beam, and novel detector systems used during the course of the experiment, and describes analysis techniques utilized to access the physics observables of interest.« less

Detached Eddy Simulation of Film Cooling over a GE Flat Plate

NASA Technical Reports Server (NTRS)

Roy, Subrata

2005-01-01

The detached eddy simulation of film cooling has been utilized for a proprietary GE plate-pipe configuration. The blowing ratio was 2.02, the velocity ratio was 1.26, and the temperature ratio was 1.61. Results indicate that the mixing processes downstream of the hole are highly anisotropic. DES solution shows its ability to depict the dynamic nature of the flow and capture the asymmetry present in temperature and velocity distributions. Further, comparison between experimental and DES time-averaged effectiveness is satisfactory. Numerical values of span-averaged effectiveness show better prediction of the experimental values at downstream locations than a steady state Glenn HT solution. While the DES method shows obvious promise, there are several issues that need further investigation. Despite an accurate prediction in the hole vicinity, the simulation still falls short in the region x = 10d to 100d. This should be investigated. Also the model used flat plate. Actual turbine blade should be modeled in the future if additional finding is available.

Advanced Solar Panel Designs

NASA Technical Reports Server (NTRS)

Ralph, E. L.; Linder, E. B.

1995-01-01

Solar panel designs that utilize new high-efficiency solar cells and lightweight rigid panel technologies are described. The resulting designs increase the specific power (W/kg) achievable in the near-term and are well suited to meet the demands of higher performance small satellites (smallsats). Advanced solar panel designs have been developed and demonstrated on two NASA SBIR contracts at Applied Solar. The first used 19% efficient, large area (5.5 cm x 6.5 cm) GaAs/Ge solar cells with a lightweight rigid graphite epoxy isogrid substrate configuration. A 1,445 sq cm coupon was fabricated and tested to demonstrate 60 W/kg with a high potential of achieving 80 W/kg. The second panel design used new 22% efficiency, dual-junction GaInP2/GaAs/Ge solar cells combined with a lightweight aluminum core/graphite fiber mesh facesheet substrate. A 1,445 sq cm coupon was fabricated and tested to demonstrate 105 W/kg with the potential of achieving 115 W/kg.

First Results on High-spin States in ^179Au

NASA Astrophysics Data System (ADS)

Mueller, W. F.; Bingham, C. R.; Reviol, W.; Riedinger, L. L.; Smith, B. H.; Wauters, J.; Ahmad, I.; Amro, H. A.; Blumenthal, D. J.; Carpenter, M. P.; Davids, C. N.; Fischer, S. M.; Hackman, G.; Henderson, D. J.; Janssens, R. V. F.; Khoo, T. L.; Lauritsen, T.; Lister, C. J.; Nisius, D. T.; Seweryniak, D.; Ma, W. C.

1996-05-01

High-spin states in ^179Au were studied for the first time in two experiments at the Argonne uc(atlas) facility. The ^144Sm(^40Ar,p4n)^179Au reaction at 207 MeV was used for the first experiment and ^124Te(^58Ni,p2n)^179Au at 255 MeV in the second. The setup in the first experiment consisted of the Fragment Mass Analyzer (uc(fma)) plus Parallel Plate Avalanche Counter (uc(ppac)) system and 10 Compton-suppressed Ge detectors (CSG's). From this run, several transitions from the yrast bands were established. The latter experiment utilized the uc(fma) + uc(ppac) system in conjunction with the uc(aye-ball) array of 19 Ge detectors (eight >70% efficient CSG's, nine 25% efficient CSG's, and two LEPS; one with Compton suppression) and a double sided silicon strip detector (uc(dssd).) The results from these experiments, including a level scheme, will be presented and discussed.

First observation of coherent π production in neutrino nucleus interactions with E<2 GeV

NASA Astrophysics Data System (ADS)

Miniboone Collaboration; Aguilar-Arevalo, A. A.; Anderson, C. E.; Bazarko, A. O.; Brice, S. J.; Brown, B. C.; Bugel, L.; Cao, J.; Coney, L.; Conrad, J. M.; Cox, D. C.; Curioni, A.; Djurcic, Z.; Finley, D. A.; Fleming, B. T.; Ford, R.; Garcia, F. G.; Garvey, G. T.; Green, C.; Green, J. A.; Hart, T. L.; Hawker, E.; Imlay, R.; Johnson, R. A.; Karagiori, G.; Kasper, P.; Katori, T.; Kobilarcik, T.; Kourbanis, I.; Koutsoliotas, S.; Laird, E. M.; Linden, S. K.; Link, J. M.; Liu, Y.; Liu, Y.; Louis, W. C.; Mahn, K. B. M.; Marsh, W.; Martin, P. S.; McGregor, G.; Metcalf, W.; Meyers, P. D.; Mills, F.; Mills, G. B.; Monroe, J.; Moore, C. D.; Nelson, R. H.; Nguyen, V. T.; Nienaber, P.; Nowak, J. A.; Ouedraogo, S.; Patterson, R. B.; Perevalov, D.; Polly, C. C.; Prebys, E.; Raaf, J. L.; Ray, H.; Roe, B. P.; Russell, A. D.; Sandberg, V.; Schirato, R.; Schmitz, D.; Shaevitz, M. H.; Shoemaker, F. C.; Smith, D.; Soderberg, M.; Sorel, M.; Spentzouris, P.; Stancu, I.; Stefanski, R. J.; Sung, M.; Tanaka, H. A.; Tayloe, R.; Tzanov, M.; van de Water, R.; Wascko, M. O.; White, D. H.; Wilking, M. J.; Yang, H. J.; Zeller, G. P.; Zimmerman, E. D.

2008-06-01

The MiniBooNE experiment at Fermilab has amassed the largest sample to date of πs produced in neutral current (NC) neutrino nucleus interactions at low energy. This Letter reports a measurement of the momentum distribution of πs produced in mineral oil (CH2) and the first observation of coherent π production below 2 GeV. In the forward direction, the yield of events observed above the expectation for resonant production is attributed primarily to coherent production off carbon, but may also include a small contribution from diffractive production on hydrogen. Integrated over the MiniBooNE neutrino flux, the sum of the NC coherent and diffractive modes is found to be (19.5±1.1(stat)±2.5(sys))% of all exclusive NC π production at MiniBooNE. These measurements are of immediate utility because they quantify an important background to MiniBooNE's search for ν→ν oscillations.

First observation of coherent π0 production in neutrino-nucleus interactions with Eν < 2 GeV

NASA Astrophysics Data System (ADS)

Aguilar-Arevalo, A. A.; Anderson, C. E.; Bazarko, A. O.; Brice, S. J.; Brown, B. C.; Bugel, L.; Cao, J.; Coney, L.; Conrad, J. M.; Cox, D. C.; Curioni, A.; Djurcic, Z.; Finley, D. A.; Fleming, B. T.; Ford, R.; Garcia, F. G.; Garvey, G. T.; Green, C.; Green, J. A.; Hart, T. L.; Hawker, E.; Imlay, R.; Johnson, R. A.; Karagiori, G.; Kasper, P.; Katori, T.; Kobilarcik, T.; Kourbanis, I.; Koutsoliotas, S.; Laird, E. M.; Linden, S. K.; Link, J. M.; Liu, Y.; Liu, Y.; Louis, W. C.; Mahn, K. B. M.; Marsh, W.; Martin, P. S.; McGregor, G.; Metcalf, W.; Meyers, P. D.; Mills, F.; Mills, G. B.; Monroe, J.; Moore, C. D.; Nelson, R. H.; Nguyen, V. T.; Nienaber, P.; Nowak, J. A.; Ouedraogo, S.; Patterson, R. B.; Perevalov, D.; Polly, C. C.; Prebys, E.; Raaf, J. L.; Ray, H.; Roe, B. P.; Russell, A. D.; Sandberg, V.; Schirato, R.; Schmitz, D.; Shaevitz, M. H.; Shoemaker, F. C.; Smith, D.; Soderberg, M.; Sorel, M.; Spentzouris, P.; Stancu, I.; Stefanski, R. J.; Sung, M.; Tanaka, H. A.; Tayloe, R.; Tzanov, M.; Van de Water, R.; Wascko, M. O.; White, D. H.; Wilking, M. J.; Yang, H. J.; Zeller, G. P.; Zimmerman, E. D.; MiniBooNE Collaboration

2008-06-01

The MiniBooNE experiment at Fermilab has amassed the largest sample to date of π0s produced in neutral current (NC) neutrino-nucleus interactions at low energy. This Letter reports a measurement of the momentum distribution of π0s produced in mineral oil (CH2) and the first observation of coherent π0 production below 2 GeV. In the forward direction, the yield of events observed above the expectation for resonant production is attributed primarily to coherent production off carbon, but may also include a small contribution from diffractive production on hydrogen. Integrated over the MiniBooNE neutrino flux, the sum of the NC coherent and diffractive modes is found to be (19.5 ± 1.1 (stat) ± 2.5 (sys)) % of all exclusive NC π0 production at MiniBooNE. These measurements are of immediate utility because they quantify an important background to MiniBooNE's search for νμ →νe oscillations.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials.

PubMed

Mitrofanov, Kirill V; Fons, Paul; Makino, Kotaro; Terashima, Ryo; Shimada, Toru; Kolobov, Alexander V; Tominaga, Junji; Bragaglia, Valeria; Giussani, Alessandro; Calarco, Raffaella; Riechert, Henning; Sato, Takahiro; Katayama, Tetsuo; Ogawa, Kanade; Togashi, Tadashi; Yabashi, Makina; Wall, Simon; Brewe, Dale; Hase, Muneaki

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge2Sb2Te5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structure experiment confirms the existence of an intermediate state with disordered bonds. This newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.

Sub-nanometre resolution of atomic motion during electronic excitation in phase-change materials

DOE PAGES

Mitrofanov, Kirill V.; Fons, Paul; Makino, Kotaro; ...

2016-02-12

Phase-change materials based on Ge-Sb-Te alloys are widely used in industrial applications such as nonvolatile memories, but reaction pathways for crystalline-to-amorphous phase-change on picosecond timescales remain unknown. Femtosecond laser excitation and an ultrashort x-ray probe is used to show the temporal separation of electronic and thermal effects in a long-lived (>100 ps) transient metastable state of Ge 2Sb 2Te 5 with muted interatomic interaction induced by a weakening of resonant bonding. Due to a specific electronic state, the lattice undergoes a reversible nondestructive modification over a nanoscale region, remaining cold for 4 ps. An independent time-resolved x-ray absorption fine structuremore » experiment confirms the existence of an intermediate state with disordered bonds. Furthermore, this newly unveiled effect allows the utilization of non-thermal ultra-fast pathways enabling artificial manipulation of the switching process, ultimately leading to a redefined speed limit, and improved energy efficiency and reliability of phase-change memory technologies.« less

Design and performance of the spin asymmetries of the nucleon experiment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maxwell, J. D.; Armstrong, W. R.; Choi, S.

The Spin Asymmetries of the Nucleon Experiment (SANE) performed inclusive, double-polarized electron scattering measurements of the proton at the Continuous Electron Beam Facility at Jefferson Lab. A novel detector array observed scattered electrons of four-momentum transfer 2.5 < Q 2 < 6.5 GeV 2 and Bjorken scaling 0.3 < x < 0.8 from initial beam energies of 4.7 and 5.9 GeV. Employing a polarized proton target which could be rotated with respect to the incident electron beam, both parallel and near perpendicular spin asymmetries were measured, allowing model-independent access to transverse polarization observables A 1, A 2, g 1, gmore » 2 and moment d 2 of the proton. This article summarizes the operation and performance of the polarized target, polarized electron beam, and novel detector systems used during the course of the experiment, and describes analysis techniques utilized to access the physics observables of interest.« less

Final-state interactions in inclusive deep-inelastic scattering from the deuteron

DOE PAGES

Cosyn, Wim; Melnitchouk, Wally; Sargsian, Misak M.

2014-01-16

We explore the role of final-state interactions (FSI) in inclusive deep-inelastic scattering from the deuteron. Relating the inclusive cross section to the deuteron forward virtual Compton scattering amplitude, a general formula for the FSI contribution is derived in the generalized eikonal approximation, utilizing the diffractive nature of the effective hadron-nucleon interaction. The calculation uses a factorized model with a basis of three resonances with mass W~<2 GeV and a continuum contribution for larger W as the relevant set of effective hadron states entering the final-state interaction amplitude. The results show sizeable on-shell FSI contributions for Bjorken x ~> 0.6 andmore » Q 2 < 10 GeV 2 increasing in magnitude for lower Q 2, but vanishing in the high-Q 2 limit due to phase space constraints. The off-shell rescattering contributes at x ~> 0.8 and is taken as an uncertainty on the on-shell result.« less

Maritime patrol aircraft engine study, General Electric Derivative Engines. Volume IV. Apendix C: performance data, F404/T1 study A1 turboprop. Final report, October 1978-April 1979

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirschkron, R.; Davis, R.H.; Warren, R.E.

1979-04-30

This study developed data on General Electric common core derivative engines for use in Maritime Patrol Aircraft (MPA) concept formulation studies. The study included the screening of potential General Electric turbofan and turboprop/turboshaft engines and the preparation of technical and planning information on three of the most promising engine candidates. Screening of General Electric derivative candidates was performed utilizing an analytical MPA model using synthesized mission profiles to rank the candidates in terms of fuel consumption, weight, cost and complexity. The three turboprop engines selected for further study were as follows: TF34 growth derivative version with boost and new LPTmore » (TF34/T7 Study A1), F404 derivative with booster stages and new LPT (F404/T1 Study A1), and GE27 scaled and boosted study engine (GE27/T3 Study A1). Volume I summarizes the screening analysis and contains technical, planning, installation, cost and development data for the three selected turboprop engines. Volumes II, III and IV of this report contain the detailed performance data estimates for the GE27/T3 Study A1, TF34/T7 Study A1 and F404/T1 Study A1 turboprop engines, respectively.« less

Maritime patrol aircraft engine study, General Electric Derivative Engines. Volume III. Appendix B: performance data, TF 34/T7 study AL turboprop. Final report October 1978-April 1979

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hirschkron, R.; Davis, R.H.; Warren, R.E.

1979-04-30

This study developed data on General Electric common core derivative engines for use in Maritime Patrol Aircraft (MPA) concept formulation studies. The study included the screening of potential General Electric turbofan and turboprop/turboshaft engines and the preparation of technical and planning information on three of the most promising engine candidates. Screening of General Electric derivative candidates was performed utilizing an analytical MPA model using synthesized mission profiles to rank the candidates in terms of fuel consumption, weight, cost and complexity. The three turboprop engines selected for further study were as follows: TF34 growth derivative version with boost and new LPTmore » (TF34/T7 Study A1), F404 derivative with booster stages and new LPT (F404/T1 Study A1), and GE27 scaled and boosted study engine (GE27/T3 Study A1). Volume I summarizes the screening analysis and contains technical, planning, installation, cost and development data for the three selected turboprop engines. Volumes II, III and IV of this report contain the detailed performance data estimates for the GE27/T3 Study A1, TF34/T7 Study A1 and F404/T1 Study A1 turboprop engines, respectively.« less

Spectroscopic properties and energy transfer analysis of Tm3+-doped BaF2-Ga2O3-GeO2-La2O3 glass.

PubMed

Yu, Shenglei; Yang, Zhongmin; Xu, Shanhui

2010-05-01

This paper reports on the spectroscopic properties and energy transfer analysis of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)-La(2)O(3) glasses with different Tm(2)O(3) doping concentrations (0.2, 0.5, 2.0, 2.5, 3.0, 3.5, 3.5, 4.0 wt%). Mid-IR fluorescence intensities in the range of 1,300 nm-2,200 nm have been measured when excited under an 808 nm LD for all the samples with the same pump power. Energy level structure and Judd-Ofelt parameters have been calculated based on the absorption spectra of Tm(3+), cross-relaxation rates and multi-phonon relaxation rates have been estimated with different Tm(2)O(3) doping concentrations. The maximum fluorescence intensity at around 1.8 mum has been obtained in Tm(2)O(3)-3 wt% sample and the maximum value of calculated stimulated emission cross-section of Tm(3+) in this sample is about 0.48 x 10(-20) cm(2) at 1,793 nm, and there is not any crystallization peak in the DSC curve of this sample, which indicate the potential utility of Tm(3+)-doped BaF(2)-Ga(2)O(3)-GeO(2)- La(2)O(3) glass for 2.0-microm optical fiber laser.

Genomic Epidemiology of Global Carbapenemase-Producing Enterobacter spp., 2008-2014.

PubMed

Peirano, Gisele; Matsumura, Yasufumi; Adams, Mark D; Bradford, Patricia; Motyl, Mary; Chen, Liang; Kreiswirth, Barry N; Pitout, Johann D D

2018-06-01

We performed whole-genome sequencing on 170 clinical carbapenemase-producing Enterobacter spp. isolates collected globally during 2008-2014. The most common carbapenemase was VIM, followed by New Delhi metallo-β-lactamase (NDM), Klebsiella pneumoniae carbapenemase, oxacillin 48, and IMP. The isolates were of predominantly 2 species (E. xiangfangensis and E. hormaechei subsp. steigerwaltii) and 4 global clones (sequence type [ST] 114, ST93, ST90, and ST78) with different clades within ST114 and ST90. Particular genetic structures surrounding carbapenemase genes were circulating locally in various institutions within the same or between different STs in Greece, Guatemala, Italy, Spain, Serbia, and Vietnam. We found a common NDM genetic structure (NDM-GE-U.S.), previously described on pNDM-U.S. from Klebsiella pneumoniae ATCC BAA-214, in 14 different clones obtained from 6 countries spanning 4 continents. Our study highlights the importance of surveillance programs using whole-genome sequencing in providing insight into the molecular epidemiology of carbapenemase-producing Enterobacter spp.

Fabrication of multilayered Ge nanocrystals embedded in SiO xGeN y films

NASA Astrophysics Data System (ADS)

Gao, Fei; Green, Martin A.; Conibeer, Gavin; Cho, Eun-Chel; Huang, Yidan; Perez-Wurfl, Ivan; Flynn, Chris

2008-09-01

Multilayered Ge nanocrystals embedded in SiO xGeN y films have been fabricated on Si substrate by a (Ge + SiO 2)/SiO xGeN y superlattice approach, using a rf magnetron sputtering technique with a Ge + SiO 2 composite target and subsequent thermal annealing in N 2 ambient at 750 °C for 30 min. X-ray diffraction (XRD) measurement indicated the formation of Ge nanocrystals with an average size estimated to be 5.4 nm. Raman scattering spectra showed a peak of the Ge-Ge vibrational mode downward shifted to 299.4 cm -1, which was caused by quantum confinement of phonons in the Ge nanocrystals. Transmission electron microscopy (TEM) revealed that Ge nanocrystals were confined in (Ge + SiO 2) layers. This superlattice approach significantly improved both the size uniformity of Ge nanocrystals and their uniformity of spacing on the 'Z' growth direction.

Device simulation of GeSn/GeSiSn pocket n-type tunnel field-effect transistor for analog and RF applications

NASA Astrophysics Data System (ADS)

Wang, Suyuan; Zheng, Jun; Xue, Chunlai; Li, Chuanbo; Zuo, Yuhua; Cheng, Buwen; Wang, Qiming

2017-11-01

We present the device simulations of analog and radio frequency (RF) performances of four double-gate pocket n-type tunneling field-effect transistors (NTFETs). The direct current (DC), analog and RF performances of the Ge-homo, GeSn-homo, GeSn/Ge and GeSn/GeSiSn NTFETs, are compared. The GeSn NTFETs greatly improve the on-state current (ION) and average subthreshold slope (SS), when compared with the Ge NTFET. Moreover, the GeSn/GeSiSn NTFET has the largest intrinsic gain (Av), and exhibits a suppressed ambipolar behavior, improved cut-off frequency (fT), and gain bandwidth product (GBW), according to the analyzed analog and RF figures of merit (FOM). Therefore, it can be concluded that the GeSn/GeSiSn NTFET has great potential as a promising candidate for the realization of future generation low-power analog/RF applications.

Low-temperature reduction of Ge oxide by Si and SiH4 in low-pressure H2 and Ar environment

NASA Astrophysics Data System (ADS)

Minami, Kaichiro; Moriya, Atsushi; Yuasa, Kazuhiro; Maeda, Kiyohiko; Yamada, Masayuki; Kunii, Yasuo; Niwano, Michio; Murota, Junichi

2015-08-01

Introduction of Ge into ULSIs has become increasingly attractive because of the higher carrier mobility of Ge. Since Ge native oxide is formed easily in cleanroom air, the control of formation and reduction of the Ge oxide is requested for the introduction of Ge layers into Si process. Here, the reactions between gas phase Ge oxide and Si substrate and between the Ge oxide on Ge epitaxial layer and SiH4 are investigated. The native-oxidized Ge amount is obtained by calculating from chemically shifted peak intensity of Ge 3d measured by X-ray photoelectron spectroscopy. By the adsorption of the Ge oxide on Si(1 0 0) surface, pure Ge and Si oxide are formed on the Si surface even at 350 °C and the formed Ge amount tends to correspond to the oxidized Si amount, independently of the heat-treatment environment of H2 and Ar under the condition that Si oxide is not reduced by H2. By SiH4 treatment, the amount of the oxidized Ge on the Ge layer decreases drastically even at 350 °C and Si oxide is formed on the Ge layer. From these results, it is suggested that the Ge oxide is reduced even at 350 °C by Si or SiH4, and the Si oxide and the pure Ge are formed.

Ion chemistry in germane/fluorocompounds gaseous mixtures: a mass spectrometric and theoretical study.

PubMed

Antoniotti, Paola; Rabezzana, Roberto; Turco, Francesca; Borocci, Stefano; Giordani, Maria; Grandinetti, Felice

2008-10-01

The ion-molecule reactions occurring in GeH(4)/NF(3), GeH(4)/SF(6), and GeH(4)/SiF(4) gaseous mixtures have been investigated by ion trap mass spectrometry and ab initio calculations. While the NF(x)(+) (x=1-3) react with GeH(4) mainly by the exothermic charge transfer, the open-shell Ge(+) and GeH(2)(+) undergo the efficient F-atom abstraction from NF(3) and form GeF(+) and F-GeH(2)(+) as the only ionic products. The mechanisms of these two processes are quite similar and involve the formation of the fluorine-coordinated complexes Ge-F-NF(2)(+) and H(2)Ge-F-NF(2)(+), their subsequent crossing to the significantly more stable isomers FGe-NF(2)(+) and F-GeH(2)-NF(2)(+), and the eventual dissociation of these ions into GeF(+) (or F-GeH(2)(+)) and NF(2). The closed-shell GeH(+) and GeH(3)(+) are instead much less reactive towards NF(3), and the only observed process is the less efficient formation of GeF(+) from GeH(+). The theoretical investigation of this unusual H/F exchange reaction suggests the involvement of vibrationally-hot GeH(+). Passing from NF(3) to SF(6) and SiF(4), the average strength of the M-F bond increases from 70 to 79 and 142 kcal mol(-1), and in fact the only process observed by reacting GeH(n)(+) (n=0-3) with SF(6) and SiF(4) is the little efficient F-atom abstraction from SF(6) by Ge(+). Irrespective of the experimental conditions, we did not observe any ionic product of Ge-N, Ge-S, or Ge-Si connectivity. This is in line with the previously observed exclusive formation of GeF(+) from the reaction between Ge(+) and C-F compounds such as CH(3)F. Additionally observed processes include in particular the conceivable formation of the elusive thiohypofluorous acid FSH from the reaction between SF(+) and GeH(4).

Utilizing Google Earth to Teach Students about Global Oil Spill Disasters

ERIC Educational Resources Information Center

Guertin, Laura; Neville, Sara

2011-01-01

The United States is currently experiencing its worst man-made environmental disaster, the BP Deepwater Horizon oil leak. The Gulf of Mexico oil spill is severe in its impact, but it is only one of several global oil spill disasters in history. Students can utilize the technology of Google Earth to explore the spatial and temporal distribution of…

Implementation of a level 1 trigger system using high speed serial (VXS) techniques for the 12GeV high luminosity experimental programs at Thomas Jefferson National Accelerator Facility

DOE Office of Scientific and Technical Information (OSTI.GOV)

C. Cuevas, B. Raydo, H. Dong, A. Gupta, F.J. Barbosa, J. Wilson, W.M. Taylor, E. Jastrzembski, D. Abbott

We will demonstrate a hardware and firmware solution for a complete fully pipelined multi-crate trigger system that takes advantage of the elegant high speed VXS serial extensions for VME. This trigger system includes three sections starting with the front end crate trigger processor (CTP), a global Sub-System Processor (SSP) and a Trigger Supervisor that manages the timing, synchronization and front end event readout. Within a front end crate, trigger information is gathered from each 16 Channel, 12 bit Flash ADC module at 4 nS intervals via the VXS backplane, to a Crate Trigger Processor (CTP). Each Crate Trigger Processor receivesmore » these 500 MB/S VXS links from the 16 FADC-250 modules, aligns skewed data inherent of Aurora protocol, and performs real time crate level trigger algorithms. The algorithm results are encoded using a Reed-Solomon technique and transmission of this Level 1 trigger data is sent to the SSP using a multi-fiber link. The multi-fiber link achieves an aggregate trigger data transfer rate to the global trigger at 8 Gb/s. The SSP receives and decodes Reed-Solomon error correcting transmission from each crate, aligns the data, and performs the global level trigger algorithms. The entire trigger system is synchronous and operates at 250 MHz with the Trigger Supervisor managing not only the front end event readout, but also the distribution of the critical timing clocks, synchronization signals, and the global trigger signals to each front end readout crate. These signals are distributed to the front end crates on a separate fiber link and each crate is synchronized using a unique encoding scheme to guarantee that each front end crate is synchronous with a fixed latency, independent of the distance between each crate. The overall trigger signal latency is <3 uS, and the proposed 12GeV experiments at Jefferson Lab require up to 200KHz Level 1 trigger rate.« less

Semi-automated lab-on-a-chip for dispensing GA-68 radiotracers

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weinberg, Irving

We solved a technical problem that is hindering American progress in molecular medicine, and restricting US citizens from receiving optimal diagnostic care. Specifically, the project deals with a mother/daughter generator of positron-emitting radiotracers (Ge-68/Ga-68). These generator systems are approved in Europe but cannot be used in the USA, because of safety issues related to possible breakthrough of long-lived Ge-68 (mother) atoms. Europeans have demonstrated abilities of Ga-68-labeled radiotracers to image cancer foci with high sensitivity and specificity, and to use such methods to effectively plan therapy.The USA Food and Drug Administration (FDA) and Nuclear Regulatory Commission (NRC) have taken themore » position that every patient administration of Ga-68 should be preceded by an assay demonstrated that Ge-68 breakthrough is within acceptable limits. Breakthrough of parent elements is a sensitive subject at the FDA, as evidenced by the recent recall of Rb-82 generators due to inadvertent administrations of Sr-82. Commercially, there is no acceptable rapid method for assaying breakthrough of Ge-68 prior to each human administration. The gamma emissions of daughter Ga-68 have higher energies than the parent Ge-68, so that the shielding assays typically employed for Mo-99/Tc-99m generators cannot be applied to Ga-68 generators. The half-life of Ga-68 is 68 minutes, so that the standard 10-half-life delay (used to assess breakthrough in Sr-82/Rb-82 generators) cannot be applied to Ga-68 generators. As a result of the aforementioned regulatory requirements, Ga-68 generators are sold in the USA for animal use only.The American clinical community’s inability to utilize Ga-68 generators impairs abilities to treat patients domestically, and puts the USA at a disadvantage in developing exportable products. The proposed DOE project aimed to take advantage of recent technological advances developed for lab-on-a-chip (LOC) applications. Based on our experiences constructing such devices, the proposed microfluidics-based approach could provide cost-effective validation of breakthrough compliance in minutes.« less

Kinetics of plasma oxidation of germanium-tin (GeSn)

NASA Astrophysics Data System (ADS)

Wang, Wei; Lei, Dian; Dong, Yuan; Zhang, Zheng; Pan, Jisheng; Gong, Xiao; Tok, Eng-Soon; Yeo, Yee-Chia

2017-12-01

The kinetics of plasma oxidation of GeSn at low temperature is investigated. The oxidation process is described by a power-law model where the oxidation rate decreases rapidly from the initial oxidation rate with increasing time. The oxidation rate of GeSn is higher than that of pure Ge, which can be explained by the higher chemical reaction rate at the GeSn-oxide/GeSn interface. In addition, the Sn atoms at the interface region exchange positions with the underlying Ge atoms during oxidation, leading to a SnO2-rich oxide near the interface. The bandgap of GeSn oxide is extracted to be 5.1 ± 0.2 eV by XPS, and the valence band offset at the GeSn-oxide/GeSn heterojunction is found to be 3.7 ± 0.2 eV. Controlled annealing experiments demonstrate that the GeSn oxide is stable with respect to annealing temperatures up to 400 °C. However, after annealing at 450 °C, the GeO2 is converted to GeO, and desorbs from the GeSn-oxide/GeSn, leaving behind Sn oxide.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices

NASA Astrophysics Data System (ADS)

Liao, P. H.; Peng, K. P.; Lin, H. C.; George, T.; Li, P. W.

2018-05-01

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO2/SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5–95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5–4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si1‑x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si1‑x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core ‘building block’ required for the fabrication of Ge-based MOS devices.

Single-fabrication-step Ge nanosphere/SiO2/SiGe heterostructures: a key enabler for realizing Ge MOS devices.

PubMed

Liao, P H; Peng, K P; Lin, H C; George, T; Li, P W

2018-05-18

We report channel and strain engineering of self-organized, gate-stacking heterostructures comprising Ge-nanosphere gate/SiO 2 /SiGe-channels. An exquisitely-controlled dynamic balance between the concentrations of oxygen, Si, and Ge interstitials was effectively exploited to simultaneously create these heterostructures in a single oxidation step. Process-controlled tunability of the channel length (5-95 nm diameters for the Ge-nanospheres), gate oxide thickness (2.5-4.8 nm), as well as crystal orientation, chemical composition and strain engineering of the SiGe-channel was achieved. Single-crystalline (100) Si 1-x Ge x shells with Ge content as high as x = 0.85 and with a compressive strain of 3%, as well as (110) Si 1-x Ge x shells with Ge content of x = 0.35 and corresponding compressive strain of 1.5% were achieved. For each crystal orientation, our high Ge-content, highly-stressed SiGe shells feature a high degree of crystallinity and thus, provide a core 'building block' required for the fabrication of Ge-based MOS devices.

Tamoxifen for breast cancer risk reduction: impact of alternative approaches to quality-of-life adjustment on cost-effectiveness analysis.

PubMed

Melnikow, Joy; Birch, Stephen; Slee, Christina; McCarthy, Theodore J; Helms, L Jay; Kuppermann, Miriam

2008-09-01

In cost-effectiveness analysis (CEA), the effects of health-care interventions on multiple health dimensions typically require consideration of both quantity and quality of life. To explore the impact of alternative approaches to quality-of-life adjustment using patient preferences (utilities) on the outcome of a CEA on use of tamoxifen for breast cancer risk reduction. A state transition Markov model tracked hypothetical cohorts of women who did or did not take 5 years of tamoxifen for breast cancer risk reduction. Incremental quality-adjusted effectiveness and cost-effectiveness ratios (ICERs) for models including and excluding a utility adjustment for menopausal symptoms were compared with each other and to a global utility model. Two hundred fifty-five women aged 50 and over with estimated 5-year breast cancer risk >or=1.67% participated in utility assessment interviews. Standard gamble utilities were assessed for specified tamoxifen-related health outcomes, current health, and for a global assessment of possible outcomes of tamoxifen use. Inclusion of a utility for menopausal symptoms in the outcome-specific models substantially increased the ICER; at the threshold 5-year breast cancer risk of 1.67%, tamoxifen was dominated. When a global utility for tamoxifen was used in place of outcome-specific utilities, tamoxifen was dominated under all circumstances. CEAs may be profoundly affected by the types of outcomes considered for quality-of-life adjustment and how these outcomes are grouped for utility assessment. Comparisons of ICERs across analyses must consider effects of different approaches to using utilities for quality-of-life adjustment.

Homogeneity of Ge-rich nanostructures as characterized by chemical etching and transmission electron microscopy.

PubMed

Bollani, Monica; Chrastina, Daniel; Montuori, Valeria; Terziotti, Daniela; Bonera, Emiliano; Vanacore, Giovanni M; Tagliaferri, Alberto; Sordan, Roman; Spinella, Corrado; Nicotra, Giuseppe

2012-02-03

The extension of SiGe technology towards new electronic and optoelectronic applications on the Si platform requires that Ge-rich nanostructures be obtained in a well-controlled manner. Ge deposition on Si substrates usually creates SiGe nanostructures with relatively low and inhomogeneous Ge content. We have realized SiGe nanostructures with a very high (up to 90%) Ge content. Using substrate patterning, a regular array of nanostructures is obtained. We report that electron microscopy reveals an abrupt change in Ge content of about 20% between the filled pit and the island, which has not been observed in other Ge island systems. Dislocations are mainly found within the filled pit and only rarely in the island. Selective chemical etching and electron energy-loss spectroscopy reveal that the island itself is homogeneous. These Ge-rich islands are possible candidates for electronic applications requiring locally induced stress, and optoelectronic applications which exploit the Ge-like band structure of Ge-rich SiGe.

Surface passivation of p-type Ge substrate with high-quality GeNx layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Okamoto, Hiroshi; Iwasaki, Takuro; Otani, Yohei; Ono, Toshiro

2011-09-01

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeNx/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeNx/Ge interface properties. The GeNx/Ge formed at room temperature and treated by PMA at 400 °C exhibits the best interface properties with an interface trap density of 1 × 1011 cm-2 eV-1. The GeNx/Ge interface is unpinned and the Fermi level at the Ge surface can move from the valence band edge to the conduction band edge.

Strain distribution of confined Ge/GeO2 core/shell nanoparticles engineered by growth environments

NASA Astrophysics Data System (ADS)

Wei, Wenyan; Yuan, Cailei; Luo, Xingfang; Yu, Ting; Wang, Gongping

2016-02-01

The strain distributions of Ge/GeO2 core/shell nanoparticles confined in different host matrix grown by surface oxidation are investigated. The simulated results by finite element method demonstrated that the strains of the Ge core and the GeO2 shell strongly depend on the growth environments of the nanoparticles. Moreover, it can be found that there is a transformation of the strain on Ge core from tensile to compressive strain during the growth of Ge/GeO2 core/shell nanoparticles. And, the transformation of the strain is closely related with the Young's modulus of surrounding materials of Ge/GeO2 core/shell nanoparticles.

Theoretical Investigations of Si-Ge Alloys in P42/ncm Phase: First-Principles Calculations

PubMed Central

Ma, Zhenyang; Liu, Xuhong; Yu, Xinhai; Shi, Chunlei; Yan, Fang

2017-01-01

The structural, mechanical, anisotropic, electronic and thermal properties of Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase are investigated in this work. The calculations have been performed with an ultra-soft pseudopotential by using the generalized gradient approximation and local density approximation in the framework of density functional theory. The achieved results for the lattice constants and band gaps of P42/ncm-Si and P42/ncm-Ge in this research have good accordance with other results. The calculated elastic constants and elastic moduli of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase are better than that of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/mnm phase. The Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase exhibit varying degrees of mechanical anisotropic properties in Poisson’s ratio, shear modulus, Young’s modulus, and universal anisotropic index. The band structures of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase show that they are all indirect band gap semiconductors with band gap of 1.46 eV, 1.25 eV, 1.36 eV and 1.00 eV, respectively. In addition, we also found that the minimum thermal conductivity κmin of the Si, Si0.667Ge0.333, Si0.333Ge0.667 and Ge in P42/ncm phase exhibit different degrees of anisotropic properties in (001), (010), (100) and (01¯0) planes. PMID:28772964

26TH International Conference on Soils, Sediment, Water and Energy

DTIC Science & Technology

2016-02-10

Suzuki, EcoVac Services, Woodstock, GA 3:00pm Break 3:30pm using Renewable energy on Remediation Sites - Life Cycle Assessment of a 2.5mw wind ... Turbine Angela Fisher and William Flanagan, GE Global Research Center, Niskayuna, NY 4:00pm Sustainable Remediation and Redevelopment of Colonial-era... wiRing miCROBeS TO THe Sun: SuSTAinABLe eneRgY AnD BiORemeDiATiOn wiTH miCROBe-eLeCTRODe inTeRACTiOnS Derek R. Lovley, Department of Microbiology

Prediction of superconducting ternary hydride MgGeH6: from divergent high-pressure formation routes.

PubMed

Ma, Yanbin; Duan, Defang; Shao, Ziji; Li, Da; Wang, Liyuan; Yu, Hongyu; Tian, Fubo; Xie, Hui; Liu, Bingbing; Cui, Tian

2017-10-18

Invigorated by the high temperature superconductivity in some binary hydrogen-dominated compounds, we systematically explored high-pressure phase diagrams and superconductivity of a ternary Mg-Ge-H system using ab initio methods. Stoichiometric MgGeH 6 with high hydrogen content exhibiting Pm3[combining macron] symmetry was predicted from a series of high-pressure synthesis paths. We performed an in-depth study on three distinct formation routes to MgGeH 6 , i.e., Mg + Ge + 3H 2 → MgGeH 6 , MgGe + 3H 2 → MgGeH 6 and MgH 2 + GeH 4 → MgGeH 6 at high pressures. By directly squeezing three elemental solids Mg + Ge + 3H 2 , we obtained ternary MgGeH 6 at 200 GPa. By adding a little bit of the MgGe alloy into hydrogen, we found that MgGeH 6 can form and stabilize at about 200 GPa. More intriguingly, upon compressing MgH 2 and GeH 4 to 250 GPa, we also predicted the same MgGeH 6 . Electron structure calculations reveal that the cubic MgGeH 6 is a good metal and takes on ionic character. Electron-phonon coupling calculation reveals a large λ = 1.16 for MgGeH 6 at 200 GPa. In particular, we found that ternary MgGeH 6 could be a potential high temperature superconductor with a superconducting transition temperature T c of ∼67 K at 200 GPa.

Correlation between optical properties and chemical composition of sputter-deposited germanium oxide (GeOx) films

NASA Astrophysics Data System (ADS)

Murphy, N. R.; Grant, J. T.; Sun, L.; Jones, J. G.; Jakubiak, R.; Shutthanandan, V.; Ramana, C. V.

2014-05-01

Germanium oxide (GeOx) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O2/(Ar + O2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO2 and then finally to GeO2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeOx films grown were amorphous. The optical properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeOx films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50-1.00, where the films become GeO2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeOx films is presented and discussed.

The Effects of Annealing Temperatures on Composition and Strain in SixGe1−x Obtained by Melting Growth of Electrodeposited Ge on Si (100)

PubMed Central

Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2014-01-01

The effects of annealing temperatures on composition and strain in SixGe1−x, obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100°C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~00 cm−1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of SixGe1−x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance. PMID:28788521

The Effects of Annealing Temperatures on Composition and Strain in Si x Ge1-x Obtained by Melting Growth of Electrodeposited Ge on Si (100).

PubMed

Abidin, Mastura Shafinaz Zainal; Morshed, Tahsin; Chikita, Hironori; Kinoshita, Yuki; Muta, Shunpei; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Matsumura, Ryo; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2014-02-24

The effects of annealing temperatures on composition and strain in Si x Ge 1- x , obtained by rapid melting growth of electrodeposited Ge on Si (100) substrate were investigated. Here, a rapid melting process was performed at temperatures of 1000, 1050 and 1100 °C for 1 s. All annealed samples show single crystalline structure in (100) orientation. A significant appearance of Si-Ge vibration mode peak at ~400 cm -1 confirms the existence of Si-Ge intermixing due to out-diffusion of Si into Ge region. On a rapid melting process, Ge melts and reaches the thermal equilibrium in short time. Si at Ge/Si interface begins to dissolve once in contact with the molten Ge to produce Si-Ge intermixing. The Si fraction in Si-Ge intermixing was calculated by taking into account the intensity ratio of Ge-Ge and Si-Ge vibration mode peaks and was found to increase with the annealing temperatures. It is found that the strain turns from tensile to compressive as the annealing temperature increases. The Si fraction dependent thermal expansion coefficient of Si x Ge 1- x is a possible cause to generate such strain behavior. The understanding of compositional and strain characteristics is important in Ge/Si heterostructure as these properties seem to give significant effects in device performance.

Interface Engineering for Atomic Layer Deposited Alumina Gate Dielectric on SiGe Substrates.

PubMed

Zhang, Liangliang; Guo, Yuzheng; Hassan, Vinayak Vishwanath; Tang, Kechao; Foad, Majeed A; Woicik, Joseph C; Pianetta, Piero; Robertson, John; McIntyre, Paul C

2016-07-27

Optimization of the interface between high-k dielectrics and SiGe substrates is a challenging topic due to the complexity arising from the coexistence of Si and Ge interfacial oxides. Defective high-k/SiGe interfaces limit future applications of SiGe as a channel material for electronic devices. In this paper, we identify the surface layer structure of as-received SiGe and Al2O3/SiGe structures based on soft and hard X-ray photoelectron spectroscopy. As-received SiGe substrates have native SiOx/GeOx surface layers, where the GeOx-rich layer is beneath a SiOx-rich surface. Silicon oxide regrows on the SiGe surface during Al2O3 atomic layer deposition, and both SiOx and GeOx regrow during forming gas anneal in the presence of a Pt gate metal. The resulting mixed SiOx-GeOx interface layer causes large interface trap densities (Dit) due to distorted Ge-O bonds across the interface. In contrast, we observe that oxygen-scavenging Al top gates decompose the underlying SiOx/GeOx, in a selective fashion, leaving an ultrathin SiOx interfacial layer that exhibits dramatically reduced Dit.

Advanced Concept Studies for Supersonic Commercial Transports Entering Service in the 2018 to 2020 Period

NASA Technical Reports Server (NTRS)

Morgenstern, John; Norstrud, Nicole; Sokhey, Jack; Martens, Steve; Alonso, Juan J.

2013-01-01

Lockheed Martin Aeronautics Company (LM), working in conjunction with General Electric Global Research (GE GR), Rolls-Royce Liberty Works (RRLW), and Stanford University, herein presents results from the "N+2 Supersonic Validations" contract s initial 22 month phase, addressing the NASA solicitation "Advanced Concept Studies for Supersonic Commercial Transports Entering Service in the 2018 to 2020 Period." This report version adds documentation of an additional three month low boom test task. The key technical objective of this effort was to validate integrated airframe and propulsion technologies and design methodologies. These capabilities aspired to produce a viable supersonic vehicle design with environmental and performance characteristics. Supersonic testing of both airframe and propulsion technologies (including LM3: 97-023 low boom testing and April-June nozzle acoustic testing) verified LM s supersonic low-boom design methodologies and both GE and RRLW's nozzle technologies for future implementation. The N+2 program is aligned with NASA s Supersonic Project and is focused on providing system-level solutions capable of overcoming the environmental and performance/efficiency barriers to practical supersonic flight. NASA proposed "Initial Environmental Targets and Performance Goals for Future Supersonic Civil Aircraft". The LM N+2 studies are built upon LM s prior N+3 100 passenger design studies. The LM N+2 program addresses low boom design and methodology validations with wind tunnel testing, performance and efficiency goals with system level analysis, and low noise validations with two nozzle (GE and RRLW) acoustic tests.

Alleviation of Fermi level pinning at metal/n-Ge interface with lattice-matched Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer on Ge

NASA Astrophysics Data System (ADS)

Suzuki, Akihiro; Nakatsuka, Osamu; Sakashita, Mitsuo; Zaima, Shigeaki

2018-06-01

The impact of a silicon germanium tin (Si x Ge1‑ x ‑ y Sn y ) ternary alloy interlayer on the Schottky barrier height (SBH) of metal/Ge contacts with various metal work functions has been investigated. Lattice matching at the Si x Ge1‑ x ‑ y Sn y /Ge heterointerface is a key factor for controlling Fermi level pinning (FLP) at the metal/Ge interface. The Si x Ge1‑ x ‑ y Sn y ternary alloy interlayer having a small lattice mismatch with the Ge substrate can alleviate FLP at the metal/Ge interface significantly. A Si0.11Ge0.86Sn0.03 interlayer increases the slope parameter for the work function dependence of the SBH to 0.4. An ohmic behavior with an SBH below 0.15 eV can be obtained with Zr and Al/Si0.11Ge0.86Sn0.03/n-Ge contacts at room temperature.

Waveguide-integrated vertical pin photodiodes of Ge fabricated on p+ and n+ Si-on-insulator layers

NASA Astrophysics Data System (ADS)

Ito, Kazuki; Hiraki, Tatsurou; Tsuchizawa, Tai; Ishikawa, Yasuhiko

2017-04-01

Vertical pin structures of Ge photodiodes (PDs) integrated with Si optical waveguides are fabricated by depositing Ge epitaxial layers on Si-on-insulator (SOI) layers, and the performances of n+-Ge/i-Ge/p+-SOI PDs are compared with those of p+-Ge/i-Ge/n+-SOI PDs. Both types of PDs show responsivities as high as 1.0 A/W at 1.55 µm, while the dark leakage current is different, which is consistent with previous reports on free-space PDs formed on bulk Si wafers. The dark current of the p+-Ge/i-Ge/n+-SOI PDs is higher by more than one order of magnitude. Taking into account the activation energies for dark current as well as the dependence on PD area, the dark current of the n+-Ge/i-Ge/p+-SOI PDs is dominated by the thermal generation of carriers via mid-gap defect levels in Ge, while for the p+-Ge/i-Ge/n+-SOI PDs, the dark current is ascribed to not only thermal generation but also other mechanisms such as locally formed conduction paths.

Proceedings of Office of Surface Mining Coal Combustion By-product Government/Regulatory Panel: University of Kentucky international ash utilization symposium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Vories, K.C.

2003-07-01

Short papers are given on: the Coal Combustion Program (C2P2) (J. Glenn); regional environmental concerns with disposal of coal combustion wastes at mines (T. FitzGerald); power plant waste mine filling - an environmental perspective (L.G. Evans); utility industry perspective regarding coal combustion product management and regulation (J. Roewer); coal combustion products opportunities for beneficial use (D.C. Goss); state perspective on mine placement of coal combustion by-products (G.E. Conrad); Texas regulations provide for beneficial use of coal combustion ash (S.S. Ferguson); and the Surface Mining Control and Reclamation Act - a response to concerns about placement of CCBs at coal minemore » sites (K.C. Vories). The questions and answers are also included.« less

Matched wideband low-noise amplifiers for radio astronomy.

PubMed

Weinreb, S; Bardin, J; Mani, H; Jones, G

2009-04-01

Two packaged low noise amplifiers for the 0.3-4 GHz frequency range are described. The amplifiers can be operated at temperatures of 300-4 K and achieve noise temperatures in the 5 K range (<0.1 dB noise figure) at 15 K physical temperature. One amplifier utilizes commercially available, plastic-packaged SiGe transistors for first and second stages; the second amplifier is identical except it utilizes an experimental chip transistor as the first stage. Both amplifiers use resistive feedback to provide input reflection coefficient S11<-10 dB over a decade bandwidth with gain over 30 dB. The amplifiers can be used as rf amplifiers in very low noise radio astronomy systems or as i.f. amplifiers following superconducting mixers operating in the millimeter and submillimeter frequency range.

Classical Cosmology Through Animation Stories

NASA Astrophysics Data System (ADS)

Mijic, Milan; Kang, E. Y. E.; Longson, T.; State LA SciVi Project, Cal

2010-05-01

Computer animations are a powerful tool for explanation and communication of ideas, especially to a younger generation. Our team completed a three part sequence of short, computer animated stories about the insight and discoveries that lead to the understanding of the overall structure of the universe. Our principal characters are Immanuel Kant, Henrietta Leavitt, and Edwin Hubble. We utilized animations to model and visualize the physical concepts behind each discovery and to recreate the characters, locations, and flavor of the time. The animations vary in length from 6 to 11 minutes. The instructors or presenters may wish to utilize them separately or together. The animations may be used for learning classical cosmology in a visual way in GE astronomy courses, in pre-college science classes, or in public science education setting.

Understanding of interface structures and reaction mechanisms induced by Ge or GeO diffusion in Al{sub 2}O{sub 3}/Ge structure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shibayama, Shigehisa; JSPS, 5-3-1 Kojimachi, Chiyoda-ku, Tokyo 102-0083; Kato, Kimihiko

2013-08-19

The reaction mechanisms at Al{sub 2}O{sub 3}/Ge interfaces with thermal oxidation through the Al{sub 2}O{sub 3} layer have been investigated. X-ray photoelectron spectroscopy reveals that an Al{sub 6}Ge{sub 2}O{sub 13} layer is formed near the interface, and a GeO{sub 2} layer is formed on the Al{sub 2}O{sub 3} surface, suggesting Ge or GeO diffusion from the Ge surface. It is also clarified that the Al{sub 6}Ge{sub 2}O{sub 13} layer is formed by the different mechanism with a small activation energy of 0.2 eV, compared with the GeO{sub 2} formation limited by oxygen diffusion. Formation of Al-O-Ge bonds due to themore » AlGeO formation could lead appropriate interface structures with high interface qualities.« less

Formation of a Ge-rich Si1-x Ge x (x > 0.9) fin epitaxial layer condensed by dry oxidation

NASA Astrophysics Data System (ADS)

Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Ko, Dae-Hong

2017-11-01

We have selectively grown an epitaxial Si0.35Ge0.65 fin layer in a 65 nm oxide trench pattern array and formed a Ge-rich Si1-x Ge x (x > 0.9) fin layer with condensed Ge using dry oxidation. During oxidation of the SiGe fin structure, we found that the compressive strain of the condensed SiGe layer was increased by about 1.3% while Ge was efficiently condensed due to a two-dimensional oxidation reaction. In this paper, we discussed in detail the diffusion during the two-dimensional condensation reaction as well as the asymmetric biaxial strain of the SiGe fin before and after oxidation using a reciprocal space mapping measurement. The application of dry oxidation on selectively grown SiGe fin layer can be an effective method for increasing hole mobility of SiGe fin with increased Ge content and self-induced compressive strain.

Anisotropic selective etching between SiGe and Si

NASA Astrophysics Data System (ADS)

Ishii, Yohei; Scott-McCabe, Ritchie; Yu, Alex; Okuma, Kazumasa; Maeda, Kenji; Sebastian, Joseph; Manos, Jim

2018-06-01

In Si/SiGe dual-channel FinFETs, it is necessary to simultaneously control the etched amounts of SiGe and Si. However, the SiGe etch rate is higher than the Si etch rate in not only halogen plasmas but also physical sputtering. In this study, we found that hydrogen plasma selectively etches Si over SiGe. The result shows that the selectivity of Si over SiGe can be up to 38 with increasing Ge concentration in SiGe. Attenuated total reflectance Fourier transform infrared spectroscopy (ATR-FTIR) results indicate that hydrogen selectively bonds with Si rather than with Ge in SiGe. During the etching, hydrogen-induced Si surface segregation is also observed. It is also observed that the difference in etched amount between SiGe and Si can be controlled from positive to negative values even in Si/SiGe dual-channel fin patterning while maintaining the vertical profiles. Furthermore, no plasma-induced lattice damage was observed by transmission electron microscopy for both Si and SiGe fin sidewalls.

Regional-Scale Forcing and Feedbacks from Alternative Scenarios of Global-Scale Land Use Change

NASA Astrophysics Data System (ADS)

Jones, A. D.; Chini, L. P.; Collins, W.; Janetos, A. C.; Mao, J.; Shi, X.; Thomson, A. M.; Torn, M. S.

2011-12-01

Future patterns of land use change depend critically on the degree to which terrestrial carbon management strategies, such as biological carbon sequestration and biofuels, are utilized in order to mitigate global climate change. Furthermore, land use change associated with terrestrial carbon management induces biogeophysical changes to surface energy budgets that perturb climate at regional and possibly global scales, activating different feedback processes depending on the nature and location of the land use change. As a first step in a broader effort to create an integrated earth system model, we examine two scenarios of future anthropogenic activity generated by the Global Change Assessment Model (GCAM) within the full-coupled Community Earth System Model (CESM). Each scenario stabilizes radiative forcing from greenhouse gases and aerosols at 4.5 W/m^2. In the first, stabilization is achieved through a universal carbon tax that values terrestrial carbon equally with fossil carbon, leading to modest afforestation globally and low biofuel utilization. In the second scenario, stabilization is achieved with a tax on fossil fuel and industrial carbon alone. In this case, biofuel utilization increases dramatically and crop area expands to claim approximately 50% of forest cover globally. By design, these scenarios exhibit identical climate forcing from atmospheric constituents. Thus, differences among them can be attributed to the biogeophysical effects of land use change. In addition, we utilize offline radiative transfer and offline land model simulations to identify forcing and feedback mechanisms operating in different regions. We find that boreal deforestation has a strong climatic signature due to significant albedo change coupled with a regional-scale water vapor feedback. Tropical deforestation, on the other hand, has more subtle effects on climate. Globally, the two scenarios yield warming trends over the 21st century that differ by 0.5 degrees Celsius. This work demonstrates the importance of land use in shaping future patterns of climate change, both globally and regionally.

Spectral Analyses and Radiation Exposures from Several Ground-Level Enhancement (GLE) Solar Proton Events: A Comparison of Methodologies

NASA Technical Reports Server (NTRS)

Atwell, William; Tylka, Allan; Dietrich, William; Badavi, Francis; Rojdev, Kristina

2011-01-01

Several methods for analyzing the particle spectra from extremely large solar proton events, called Ground-Level Enhancements (GLEs), have been developed and utilized by the scientific community to describe the solar proton energy spectra and have been further applied to ascertain the radiation exposures to humans and radio-sensitive systems, namely electronics. In this paper 12 GLEs dating back to 1956 are discussed, and the three methods for describing the solar proton energy spectra are reviewed. The three spectral fitting methodologies are EXP [an exponential in proton rigidity (R)], WEIB [Weibull fit: an exponential in proton energy], and the Band function (BAND) [a double power law in proton rigidity]. The EXP and WEIB methods use low energy (MeV) GLE solar proton data and make extrapolations out to approx.1 GeV. On the other hand, the BAND method utilizes low- and medium-energy satellite solar proton data combined with high-energy solar proton data deduced from high-latitude neutron monitoring stations. Thus, the BAND method completely describes the entire proton energy spectrum based on actual solar proton observations out to 10 GeV. Using the differential spectra produced from each of the 12 selected GLEs for each of the three methods, radiation exposures are presented and discussed in detail. These radiation exposures are then compared with the current 30-day and annual crew exposure limits and the radiation effects to electronics.

The GlueX Start Counter and Beam Asymmetry$$\\Sigma$$ in Single $$\\pi^{0}$$ Photoproduction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pooser, Eric

The GlueX experiment aims to study meson photoproduction while utilizing the coherent bremsstrahlung technique to produce a 9 GeV linearly polarized photon beam incident on a liquid H 2 target. A Start Counter detector was fabricated to properly identify the accelerator electron beam buckets and to provide accurate timing information. The Start Counter detector was designed to operate at photon intensities of up to 10 8 γ/s in the coherent peak and provides a timing resolution ~300 ps so as to provide successful identification of the electron beam buckets to within 99% accuracy. Furthermore, the Start Counter detector provides excellent solid angle coverage, ~ 90% of 4π hermeticity, and a high degree of segmentation for background rejection. It consists of a cylindrical array of 30 scintillators with pointed ends that bend towards the beam at the downstream end. Magnetic field insensitive silicon photomultiplier detectors were selected as the readout system. An initial measurement of the beam asymmetry Sigma in the exclusive reaction γmore » $$\\vec{p}$$→ π 0p, where π 0 → γ has been carried out utilizing the GlueX spectrometer during the Spring 2015 commissioning run. The tagged photon energies ranged from 2.5≤ Eγ ≤ 3.0 GeV in the coherent peak. These measurements were then compared to the world data set and show remarkable agreement with only two hours of physics production running.« less

Cosmic-ray transport in the heliosphere: A global perspective

NASA Astrophysics Data System (ADS)

Florinski, Vladimir

2013-02-01

Earth is shielded from the hazardous galactic radiation in the form or cosmic ray ions by the outwardly flow of the solar wind plasma and by the geomagnetic field. Understanding the effects of the global structure of the heliosphere on the transport of energetic charged particles remains an important challenge in space physics. The expanding bubble of the supersonic solar wind cools the populations of GeV ions that penetrate deeply into the interplanetary space. Beyond the solar wind lies the heliosheath that is believed to act as a long-term storage reservoir for the cosmic rays. The heliosheath and its magnetic field topology play an important role in modulating cosmic rays at large heliocentric distances. Understanding this role is crucial for interpreting the the puzzling Voyager spacecraft observations near the edge of the solar system.

Surface passivation of p-type Ge substrate with high-quality GeN{sub x} layer formed by electron-cyclotron-resonance plasma nitridation at low temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fukuda, Yukio; Otani, Yohei; Okamoto, Hiroshi

2011-09-26

We have investigated the effects of the formation temperature and postmetallization annealing (PMA) on the interface properties of GeN{sub x}/p-Ge fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The nitridation temperature is found to be a critical parameter in improving the finally obtained GeN{sub x}/Ge interface properties. The GeN{sub x}/Ge formed at room temperature and treated by PMA at 400 deg. C exhibits the best interface properties with an interface trap density of 1 x 10{sup 11 }cm{sup -2 }eV{sup -1}. The GeN{sub x}/Ge interface is unpinned and the Fermi level at the Ge surfacemore » can move from the valence band edge to the conduction band edge.« less

Niagara Falls IAP NY. Revised Uniform Summary of Surface Weather Observations. Parts A-F.

DTIC Science & Technology

1987-10-01

14 Date of Report: Oct 1987 15 .tpas Comet: 312 16 Supplementary Notation: 17 COSATI Codes: Field --04, Group--02 18 Subject Term: *climatology...2.’ .3 .6 .3 .2 .0 .3 331. I ~ .3 2.0 7.! .6 .6. 04. 131 1U1 . . Z.9 2.? . .0 1.2 10.3 T(16 I !. 21.3 $S 3s3.. t. 1.2 .3 .2 100.0 . dm-C -LOsAL CLII...SIATL’Tr MILLS [9 3 GE GE GE I.E GE GE GE GE GE or G£ G GE GE 61 GE FEEI I I" b 5 4 32 lie 2 1 112 1 l I4 ! 1/4 518 1/1 ilb 114 U r.0 EIL I 22.7 75.b

SiGe nano-heteroepitaxy on Si and SiGe nano-pillars.

PubMed

Mastari, M; Charles, M; Bogumilowicz, Y; Thai, Q M; Pimenta-Barros, P; Argoud, M; Papon, A M; Gergaud, P; Landru, D; Kim, Y; Hartmann, J M

2018-07-06

In this paper, SiGe nano-heteroepitaxy on Si and SiGe nano-pillars was investigated in a 300 mm industrial reduced pressure-chemical vapour deposition tool. An integration scheme based on diblock copolymer patterning was used to fabricate nanometre-sized templates for the epitaxy of Si and SiGe nano-pillars. Results showed highly selective and uniform processes for the epitaxial growth of Si and SiGe nano-pillars. 200 nm thick SiGe layers were grown on Si and SiGe nano-pillars and characterised by atomic force microscopy, x-ray diffraction and transmission electron microscopy. Smooth SiGe surfaces and full strain relaxation were obtained in the 650 °C-700 °C range for 2D SiGe layers grown either on Si or SiGe nano-pillars.

Intermixing between HfO{sub 2} and GeO{sub 2} films deposited on Ge(001) and Si(001): Role of the substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Soares, G. V.; Krug, C.; Miotti, L.

2011-03-28

Thermally driven atomic transport in HfO{sub 2}/GeO{sub 2}/substrate structures on Ge(001) and Si(001) was investigated in N{sub 2} ambient as function of annealing temperature and time. As-deposited stacks showed no detectable intermixing and no instabilities were observed on Si. On Ge, loss of O and Ge was detected in all annealed samples, presumably due to evolution of GeO from the GeO{sub 2}/Ge interface. In addition, hafnium germanate is formed at 600 deg. C. Our data indicate that at 500 deg. C and above HfO{sub 2}/GeO{sub 2} stacks are stable only if isolated from the Ge substrate.

VIP Data Explorer: A Tool for Exploring 30 years of Vegetation Index and Phenology Observations

NASA Astrophysics Data System (ADS)

Barreto-munoz, A.; Didan, K.; Rivera-Camacho, J.; Yitayew, M.; Miura, T.; Tsend-Ayush, J.

2011-12-01

Continuous acquisition of global satellite imagery over the years has contributed to the creation of long term data records from AVHRR, MODIS, TM, SPOT-VGT and other sensors. These records account for 30+ years, as these archives grow, they become invaluable tools for environmental, resources management, and climate studies dealing with trends and changes from local, regional to global scale. In this project, the Vegetation Index and Phenology Lab (VIPLab) is processing 30 years of daily global surface reflectance data into an Earth Science Data Record of Vegetation Index and Phenology metrics. Data from AVHRR (N07,N09,N11 and N14) and MODIS (AQUA and TERRA collection 5) for the periods 1981-1999 and 2000-2010, at CMG resolution were processed into one seamless and sensor independent data record using various filtering, continuity and gap filling techniques (Tsend-Ayush et al., AGU 2011, Rivera-Camacho et al, AGU 2011). An interactive online tool (VIP Data Explorer) was developed to support the visualization, qualitative and quantitative exploration, distribution, and documentation of these records using a simple web 2.0 interface. The VIP Data explorer (http://vip.arizona.edu/viplab_data_explorer) can display any combination of multi temporal and multi source data, enable the quickly exploration and cross comparison of the various levels of processing of this data. It uses the Google Earth (GE) model and was developed using the GE API for images rendering, manipulation and geolocation. These ESDRs records can be quickly animated in this environment and explored for visual trends and anomalies detection. Additionally the tool enables extracting and visualizing any land pixel time series while showing the different levels of processing it went through. User can explore this ESDR database within this data explorer GUI environment, and any desired data can be placed into a dynamic "cart" to be ordered and downloaded later. More functionalities are planned and will be added to this data explorer tool as the project progresses.

Sr{sub 7}Ge{sub 6}, Ba{sub 7}Ge{sub 6} and Ba{sub 3}Sn{sub 2} -Three new binary compounds containing dumbbells and four-membered chains of tetrel atoms with considerable Ge-Ge {pi}-bonding character

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siggelkow, Lisa; Hlukhyy, Viktor; Faessler, Thomas F., E-mail: thomas.faessler@lrz.tum.de

2012-07-15

The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} were prepared by arc melting and annealing in welded tantalum ampoules using induction as well as resistance furnaces. The compounds were investigated by powder and single crystal X-ray diffraction. Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} crystallize in the Ca{sub 7}Sn{sub 6} structure type (space group Pmna, Z=4: a=7.777(2) A, b=23.595(4) A, c=8.563(2) A, wR{sub 2}=0.081 (all data), 2175 independent reflections, 64 variable parameters for Sr{sub 7}Ge{sub 6} and a=8.0853(6) A, b=24.545(2) A, c=8.9782(8) A, wR{sub 2}=0.085 (all data), 2307 independent reflections, 64more » variable parameters for Ba{sub 7}Ge{sub 6}). Ba{sub 3}Sn{sub 2} crystallizes in an own structure type with the space group P4{sub 3}2{sub 1}2, Z=4, a=6.6854(2) A, c=17.842(2) A, wR{sub 2}=0.037 (all data), 1163 independent reflections, 25 variable parameters. In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains. Their crystal structures cannot be rationalized according to the (8-N) rule. In contrast, Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. The chemical bonding situation in these structures is discussed on the basis of partial and total Density Of States (DOS) curves, band structures including fatbands, topological analysis of the Electron Localization Function (ELF) as well as Bader analysis of the bond critical points using the programs TB-LMTO-ASA and WIEN2K. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, all germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. The {pi}-bonding character of the germanides is best reflected by the resonance hybrid structures {l_brace}[Ge-Ge]{sup 6-}/[Ge-{sup ....}Ge-{sup ....}Ge-{sup ....}Ge]{sup 8-}{r_brace}{r_reversible}{l_brace}[Ge=Ge]{sup 4-}/[Ge-Ge-Ge-Ge]{sup 10-}{r_brace}. - Graphical abstract: The structure of Ba{sub 3}Sn{sub 2} contains Sn{sub 2} dumbbells as a main structural motif and thereby can be described as an electron precise Zintl phase. Ge{sub 2} dumbbells and Ge{sub 4} four-membered atom chains are the predominant features in Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6}. Their crystal structures cannot be rationalized according to the (8-N) rule. While Ba{sub 3}Sn{sub 2} reveals semiconducting behaviour, the germanides Ae{sub 7}Ge{sub 6} (Ae=Ca, Sr, and Ba) show metallic properties and a considerable {pi}-bonding character between the Ge atoms of the four-membered chains and the dumbbells. Highlights: Black-Right-Pointing-Pointer The germanides Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} as well as the stannide Ba{sub 3}Sn{sub 2} have been synthesized. Black-Right-Pointing-Pointer In Sr{sub 7}Ge{sub 6} and Ba{sub 7}Ge{sub 6} the Ge atoms are arranged as dumbbells and four-membered atom chains. Black-Right-Pointing-Pointer Ba{sub 3}Sn{sub 2} presents Sn{sub 2} dumbbells as a main structural motif. Black-Right-Pointing-Pointer The chemical bonding situation within these structures is discussed.« less

Bacillus beijingensis sp. nov. and Bacillus ginsengi sp. nov., isolated from ginseng root.

PubMed

Qiu, Fubin; Zhang, Xiaoxia; Liu, Lin; Sun, Lei; Schumann, Peter; Song, Wei

2009-04-01

Four alkaligenous, moderately halotolerant strains, designated ge09, ge10(T), ge14(T) and ge15, were isolated from the internal tissue of ginseng root and their taxonomic positions were investigated by using a polyphasic approach. Cells of the four strains were Gram-positive-staining, non-motile, short rods. Phylogenetic analysis based on 16S rRNA gene sequences showed that strains ge09 and ge10(T) formed one cluster and strains ge14(T) and ge15 formed another separate cluster within the genus Bacillus. 16S rRNA gene sequence similarities with type strains of other Bacillus species were less than 97 %. Levels of DNA-DNA relatedness among the four strains showed that strains ge09 and ge10(T) and strains ge14(T) and ge15 belonged to two separate species; the mean level of DNA-DNA relatedness between ge10(T) and ge14(T) was only 28.7 %. Their phenotypic and physiological properties supported the view that the two strains represent two different novel species of the genus Bacillus. The DNA G+C contents of strains ge10(T) and ge14(T) were 49.9 and 49.6 mol%, respectively. Strains ge10(T) and ge14(T) showed the peptidoglycan type A4alpha l-Lys-d-Glu. The lipids present in strains ge10(T) and ge14(T) were diphosphatidylglycerol, phosphatidylglycerol, a minor amount of phosphatidylcholine and two unknown phospholipids. Their predominant respiratory quinone was MK-7. The fatty acid profiles of the four novel strains contained large quantities of branched and saturated fatty acids. The predominant cellular fatty acids were iso-C(15 : 0) (42.5 %), anteiso-C(15 : 0) (22.2 %), anteiso-C(17 : 0) (7.3 %) and C(16 : 1)omega7c alcohol (5.7 %) in ge10(T) and iso-C(15 : 0) (50.7 %) and anteiso-C(15 : 0) (20.1 %) in ge14(T). On the basis of their phenotypic properties and phylogenetic distinctiveness, two novel species of the genus Bacillus are proposed, Bacillus beijingensis sp. nov. (type strain ge10(T) =DSM 19037(T) =CGMCC 1.6762(T)) and Bacillus ginsengi sp. nov. (type strain ge14(T) =DSM 19038(T) =CGMCC 1.6763(T)).

Correlation Between Optical Properties And Chemical Composition Of Sputter-deposited Germanium Cxide (GeO x) Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, Neil R.; Grant, J. T.; Sun, L.

2014-03-18

Germanium oxide (GeO x) films were grown on (1 0 0) Si substrates by reactive Direct-Current (DC) magnetron sputter-deposition using an elemental Ge target. The effects of oxygen gas fraction, Г = O 2/(Ar + O 2), on the deposition rate, structure, chemical composition and optical properties of GeOx films have been investigated. The chemistry of the films exhibits an evolution from pure Ge to mixed Ge + GeO + GeO 2 and then finally to GeO 2 upon increasing Г from 0.00 to 1.00. Grazing incidence X-ray analysis indicates that the GeO x films grown were amorphous. The opticalmore » properties probed by spectroscopic ellipsometry indicate that the effect of Г is significant on the optical constants of the GeO x films. The measured index of refraction (n) at a wavelength (λ) of 550 nm is 4.67 for films grown without any oxygen, indicating behavior characteristic of semiconducting Ge. The transition from germanium to mixed Ge + GeO + GeO 2 composition is associated with a characteristic decrease in n (λ = 550 nm) to 2.62 and occurs at Г = 0.25. Finally n drops to 1.60 for Г = 0.50–1.00, where the films become GeO 2. A detailed correlation between Г, n, k and stoichiometry in DC sputtered GeO x films is presented and discussed.« less

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates

NASA Astrophysics Data System (ADS)

Imajo, T.; Toko, K.; Takabe, R.; Saitoh, N.; Yoshizawa, N.; Suemasu, T.

2018-01-01

Semiconductor strontium digermanide (SrGe2) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe2 to high-efficiency thin-film solar cells.

Botswana's Beef Global Commodity Chain: Explaining the Resistance to Change

ERIC Educational Resources Information Center

Ransom, Elizabeth

2011-01-01

In an era of increasing global agricultural trade, many firms and farms seek to upgrade their agricultural commodity chains to become better integrated into global markets. Utilizing a global commodity chain (GCC) approach, this analysis unravels the challenges to and the potential consequences of upgrading Botswana's beef commodity chain.…

Developing Successful Global Leaders

ERIC Educational Resources Information Center

Training, 2011

2011-01-01

Everyone seems to agree the world desperately needs strong leaders who can manage a global workforce and all the inherent challenges that go with it. That's a big part of the raison d'etre for global leadership development programs. But are today's organizations fully utilizing these programs to develop global leaders, and, if so, are they…

High quality Ge epilayer on Si (1 0 0) with an ultrathin Si1-x Ge x /Si buffer layer by RPCVD

NASA Astrophysics Data System (ADS)

Chen, Da; Guo, Qinglei; Zhang, Nan; Xu, Anli; Wang, Bei; Li, Ya; Wang, Gang

2017-07-01

The authors report a method to grow high quality strain-relaxed Ge epilayer on a combination of low temperature Ge seed layer and Si1-x Ge x /Si superlattice buffer layer by reduced pressure chemical vapor deposition system without any subsequent annealing treatment. Prior to the growth of high quality Ge epilayer, an ultrathin Si1-x Ge x /Si superlattice buffer layer with the thickness of 50 nm and a 460 nm Ge seed layer were deposited successively at low temperature. Then an 840 nm Ge epilayer was grown at high deposition rate with the surface root-mean-square roughness of 0.707 nm and threading dislocation density of 2.5  ×  106 cm-2, respectively. Detailed investigations of the influence of ultrathin low-temperature Si1-x Ge x /Si superlattice buffer layer on the quality of Ge epilayer were performed, which indicates that the crystalline quality of Ge epilayer can be significantly improved by enhancing the Ge concentration of Si1-x Ge x /Si superlattice buffer layer.

Evidence for a particle produced in association with weak bosons and decaying to a bottom-antibottom quark pair in higgs boson searches at the tevatron.

PubMed

Aaltonen, T; Abazov, V M; Abbott, B; Acharya, B S; Adams, M; Adams, T; Alexeev, G D; Alkhazov, G; Alton, A; Alvarez González, B; Alverson, G; Amerio, S; Amidei, D; Anastassov, A; Annovi, A; Antos, J; Apollinari, G; Appel, J A; Arisawa, T; Artikov, A; Asaadi, J; Ashmanskas, W; Askew, A; Atkins, S; Auerbach, B; Augsten, K; Aurisano, A; Avila, C; Azfar, F; Badaud, F; Badgett, W; Bae, T; Bagby, L; Baldin, B; Bandurin, D V; Banerjee, S; Barbaro-Galtieri, A; Barberis, E; Baringer, P; Barnes, V E; Barnett, B A; Barria, P; Bartlett, J F; Bartos, P; Bassler, U; Bauce, M; Bazterra, V; Bean, A; Bedeschi, F; Begalli, M; Behari, S; Bellantoni, L; Bellettini, G; Bellinger, J; Benjamin, D; Beretvas, A; Beri, S B; Bernardi, G; Bernhard, R; Bertram, I; Besançon, M; Beuselinck, R; Bhat, P C; Bhatia, S; Bhatnagar, V; Bhatti, A; Binkley, M; Bisello, D; Bizjak, I; Bland, K R; Blazey, G; Blessing, S; Bloom, K; Blumenfeld, B; Bocci, A; Bodek, A; Boehnlein, A; Boline, D; Boos, E E; Borissov, G; Bortoletto, D; Bose, T; Boudreau, J; Boveia, A; Brandt, A; Brandt, O; Brigliadori, L; Brock, R; Bromberg, C; Bross, A; Brown, D; Brown, J; Brucken, E; Budagov, J; Bu, X B; Budd, H S; Buehler, M; Buescher, V; Bunichev, V; Burdin, S; Burkett, K; Busetto, G; Bussey, P; Buszello, C P; Buzatu, A; Calamba, A; Calancha, C; Camacho-Pérez, E; Camarda, S; Campanelli, M; Campbell, M; Canelli, F; Carls, B; Carlsmith, D; Carosi, R; Carrillo, S; Carron, S; Casal, B; Casarsa, M; Casey, B C K; Castilla-Valdez, H; Castro, A; Catastini, P; Caughron, S; Cauz, D; Cavaliere, V; Cavalli-Sforza, M; Cerri, A; Cerrito, L; Chakrabarti, S; Chakraborty, D; Chan, K M; Chandra, A; Chapon, E; Chen, G; Chen, Y C; Chertok, M; Chevalier-Théry, S; Chiarelli, G; Chlachidze, G; Chlebana, F; Cho, D K; Cho, K; Cho, S W; Choi, S; Chokheli, D; Choudhary, B; Chung, W H; Chung, Y S; Cihangir, S; Ciocci, M A; Claes, D; Clark, A; Clarke, C; Clutter, J; Compostella, G; Convery, M E; Conway, J; Cooke, M; Cooper, W E; Corbo, M; Corcoran, M; Cordelli, M; Couderc, F; Cousinou, M-C; Cox, C A; Cox, D J; Crescioli, F; Croc, A; Cuevas, J; Culbertson, R; Cutts, D; Dagenhart, D; d'Ascenzo, N; Das, A; Datta, M; Davies, G; de Barbaro, P; de Jong, S J; De La Cruz-Burelo, E; Déliot, F; Dell'orso, M; Demina, R; Demortier, L; Deninno, M; Denisov, D; Denisov, S P; d'Errico, M; Desai, S; Deterre, C; Devaughan, K; Devoto, F; Di Canto, A; Di Ruzza, B; Diehl, H T; Diesburg, M; Ding, P F; Dittmann, J R; Dominguez, A; Donati, S; Dong, P; D'Onofrio, M; Dorigo, M; Dorigo, T; Dubey, A; Dudko, L V; Duggan, D; Duperrin, A; Dutt, S; Dyshkant, A; Eads, M; Ebina, K; Edmunds, D; Elagin, A; Ellison, J; Elvira, V D; Enari, Y; Eppig, A; Erbacher, R; Errede, S; Ershaidat, N; Eusebi, R; Evans, H; Evdokimov, A; Evdokimov, V N; Facini, G; Farrington, S; Feindt, M; Feng, L; Ferbel, T; Fernandez, J P; Ferrazza, C; Fiedler, F; Field, R; Filthaut, F; Fisher, W; Fisk, H E; Flanagan, G; Forrest, R; Fortner, M; Fox, H; Frank, M J; Franklin, M; Freeman, J C; Fuess, S; Funakoshi, Y; Gallinaro, M; Garcia-Bellido, A; Garcia, J E; García-González, J A; García-Guerra, G A; Garfinkel, A F; Garosi, P; Gavrilov, V; Gay, P; Geng, W; Gerbaudo, D; Gerber, C E; Gerberich, H; Gerchtein, E; Gershtein, Y; Giagu, S; Giakoumopoulou, V; Giannetti, P; Gibson, K; Ginsburg, C M; Ginther, G; Giokaris, N; Giromini, P; Giurgiu, G; Glagolev, V; Glenzinski, D; Gold, M; Goldin, D; Goldschmidt, N; Golossanov, A; Golovanov, G; Gomez-Ceballos, G; Gomez, G; Goncharov, M; González, O; Gorelov, I; Goshaw, A T; Goulianos, K; Goussiou, A; Grannis, P D; Greder, S; Greenlee, H; Grenier, G; Grinstein, S; Gris, Ph; Grivaz, J-F; Grohsjean, A; Grosso-Pilcher, C; Group, R C; Grünendahl, S; Grünewald, M W; Guillemin, T; Guimaraes da Costa, J; Gutierrez, G; Gutierrez, P; Hagopian, S; Hahn, S R; Haley, J; Halkiadakis, E; Hamaguchi, A; Han, J Y; Han, L; Happacher, F; Hara, K; Harder, K; Hare, D; Hare, M; Harel, A; Harr, R F; Hatakeyama, K; Hauptman, J M; Hays, C; Hays, J; Head, T; Hebbeker, T; Heck, M; Hedin, D; Hegab, H; Heinrich, J; Heinson, A P; Heintz, U; Hensel, C; Heredia-De La Cruz, I; Herndon, M; Herner, K; Hesketh, G; Hewamanage, S; Hildreth, M D; Hirosky, R; Hoang, T; Hobbs, J D; Hocker, A; Hoeneisen, B; Hogan, J; Hohlfeld, M; Hopkins, W; Horn, D; Hou, S; Howley, I; Hubacek, Z; Hughes, R E; Hurwitz, M; Husemann, U; Hussain, N; Hussein, M; Huston, J; Hynek, V; Iashvili, I; Ilchenko, Y; Illingworth, R; Introzzi, G; Iori, M; Ito, A S; Ivanov, A; Jabeen, S; Jaffré, M; James, E; Jang, D; Jayasinghe, A; Jayatilaka, B; Jeans, D T; Jeon, E J; Jeong, M S; Jesik, R; Jiang, P; Jindariani, S; Johns, K; Johnson, E; Johnson, M; Jonckheere, A; Jones, M; Jonsson, P; Joo, K K; Joshi, J; Jun, S Y; Jung, A W; Junk, T R; Juste, A; Kaadze, K; Kajfasz, E; Kamon, T; Karchin, P E; Karmanov, D; Kasmi, A; Kasper, P A; Kato, Y; Katsanos, I; Kehoe, R; Kermiche, S; Ketchum, W; Keung, J; Khalatyan, N; Khanov, A; Kharchilava, A; Kharzheev, Y N; Khotilovich, V; Kilminster, B; Kim, D H; Kim, H S; Kim, J E; Kim, M J; Kim, S B; Kim, S H; Kim, Y J; Kim, Y K; Kimura, N; Kirby, M; Kiselevich, I; Klimenko, S; Knoepfel, K; Kohli, J M; Kondo, K; Kong, D J; Konigsberg, J; Kotwal, A V; Kozelov, A V; Kraus, J; Kreps, M; Kroll, J; Krop, D; Kruse, M; Krutelyov, V; Kuhr, T; Kulikov, S; Kumar, A; Kupco, A; Kurata, M; Kurča, T; Kuzmin, V A; Kwang, S; Laasanen, A T; Lami, S; Lammel, S; Lammers, S; Lancaster, M; Lander, R L; Lannon, K; Lath, A; Latino, G; Lebrun, P; Lecompte, T; Lee, E; Lee, H S; Lee, H S; Lee, J S; Lee, S W; Lee, S W; Lee, W M; Lei, X; Lellouch, J; Leo, S; Leone, S; Lewis, J D; Li, D; Li, H; Li, L; Li, Q Z; Lim, J K; Limosani, A; Lincoln, D; Lin, C-J; Lindgren, M; Linnemann, J; Lipaev, V V; Lipeles, E; Lipton, R; Lister, A; Litvintsev, D O; Liu, C; Liu, H; Liu, H; Liu, Q; Liu, T; Liu, Y; Lobodenko, A; Lockwitz, S; Loginov, A; Lokajicek, M; Lopes de Sa, R; Lubatti, H J; Lucchesi, D; Lueck, J; Lujan, P; Lukens, P; Luna-Garcia, R; Lungu, G; Lyon, A L; Lysak, R; Lys, J; Maciel, A K A; Madar, R; Madrak, R; Maestro, P; Magaña-Villalba, R; Malik, S; Malik, S; Malyshev, V L; Manca, G; Manousakis-Katsikakis, A; Maravin, Y; Margaroli, F; Marino, C; Martínez, M; Martínez-Ortega, J; Mastrandrea, P; Matera, K; Mattson, M E; Mazzacane, A; Mazzanti, P; McCarthy, R; McFarland, K S; McGivern, C L; McIntyre, P; McNulty, R; Mehta, A; Mehtala, P; Meijer, M M; Melnitchouk, A; Menezes, D; Mercadante, P G; Merkin, M; Mesropian, C; Meyer, A; Meyer, J; Miao, T; Miconi, F; Mietlicki, D; Mitra, A; Miyake, H; Moed, S; Moggi, N; Mondal, N K; Mondragon, M N; Moon, C S; Moore, R; Morello, M J; Morlock, J; Movilla Fernandez, P; Mukherjee, A; Mulhearn, M; Muller, Th; Murat, P; Mussini, M; Nachtman, J; Nagai, Y; Naganoma, J; Nagy, E; Naimuddin, M; Nakano, I; Napier, A; Narain, M; Nayyar, R; Neal, H A; Negret, J P; Nett, J; Neubauer, M S; Neu, C; Neustroev, P; Nguyen, H T; Nielsen, J; Nodulman, L; Noh, S Y; Norniella, O; Nunnemann, T; Oakes, L; Oh, S H; Oh, Y D; Oksuzian, I; Okusawa, T; Orava, R; Orduna, J; Ortolan, L; Osman, N; Osta, J; Padilla, M; Pagan Griso, S; Pagliarone, C; Pal, A; Palencia, E; Papadimitriou, V; Paramonov, A A; Parashar, N; Parihar, V; Park, S K; Partridge, R; Parua, N; Patrick, J; Patwa, A; Pauletta, G; Paulini, M; Paus, C; Pellett, D E; Penning, B; Penzo, A; Perfilov, M; Peters, Y; Petridis, K; Petrillo, G; Pétroff, P; Phillips, T J; Piacentino, G; Pianori, E; Pilot, J; Pitts, K; Plager, C; Pleier, M-A; Podesta-Lerma, P L M; Podstavkov, V M; Pondrom, L; Popov, A V; Poprocki, S; Potamianos, K; Pranko, A; Prewitt, M; Price, D; Prokopenko, N; Prokoshin, F; Ptohos, F; Punzi, G; Qian, J; Quadt, A; Quinn, B; Rahaman, A; Ramakrishnan, V; Rangel, M S; Ranjan, K; Ranjan, N; Ratoff, P N; Razumov, I; Redondo, I; Renkel, P; Renton, P; Rescigno, M; Riddick, T; Rimondi, F; Ripp-Baudot, I; Ristori, L; Rizatdinova, F; Robson, A; Rodriguez, T; Rogers, E; Rolli, S; Rominsky, M; Roser, R; Ross, A; Royon, C; Rubinov, P; Ruchti, R; Ruffini, F; Ruiz, A; Russ, J; Rusu, V; Safonov, A; Sajot, G; Sakumoto, W K; Sakurai, Y; Salcido, P; Sánchez-Hernández, A; Sanders, M P; Santi, L; Santos, A S; Sato, K; Savage, G; Saveliev, V; Savoy-Navarro, A; Sawyer, L; Scanlon, T; Schamberger, R D; Scheglov, Y; Schellman, H; Schlabach, P; Schlobohm, S; Schmidt, A; Schmidt, E E; Schwanenberger, C; Schwarz, T; Schwienhorst, R; Scodellaro, L; Scribano, A; Scuri, F; Seidel, S; Seiya, Y; Sekaric, J; Semenov, A; Severini, H; Sforza, F; Shabalina, E; Shalhout, S Z; Shary, V; Shaw, S; Shchukin, A A; Shears, T; Shepard, P F; Shimojima, M; Shivpuri, R K; Shochet, M; Shreyber-Tecker, I; Simak, V; Simonenko, A; Sinervo, P; Skubic, P; Slattery, P; Sliwa, K; Smirnov, D; Smith, J R; Smith, K J; Snider, F D; Snow, G R; Snow, J; Snyder, S; Soha, A; Söldner-Rembold, S; Song, H; Sonnenschein, L; Sorin, V; Soustruznik, K; Squillacioti, P; St Denis, R; Stancari, M; Stark, J; Stelzer-Chilton, O; Stelzer, B; Stentz, D; Stoyanova, D A; Strauss, M; Strologas, J; Strycker, G L; Sudo, Y; Sukhanov, A; Suslov, I; Suter, L; Svoisky, P; Takahashi, M; Takemasa, K; Takeuchi, Y; Tang, J; Tecchio, M; Teng, P K; Thom, J; Thome, J; Thompson, G A; Thomson, E; Titov, M; Toback, D; Tokar, S; Tokmenin, V V; Tollefson, K; Tomura, T; Tonelli, D; Torre, S; Torretta, D; Totaro, P; Trovato, M; Tsai, Y-T; Tschann-Grimm, K; Tsybychev, D; Tuchming, B; Tully, C; Ukegawa, F; Uozumi, S; Uvarov, L; Uvarov, S; Uzunyan, S; Van Kooten, R; van Leeuwen, W M; Varelas, N; Varganov, A; Varnes, E W; Vasilyev, I A; Vázquez, F; Velev, G; Vellidis, C; Verdier, P; Verkheev, A Y; Vertogradov, L S; Verzocchi, M; Vesterinen, M; Vidal, M; Vila, I; Vilanova, D; Vilar, R; Vizán, J; Vogel, M; Vokac, P; Volpi, G; Wagner, P; Wagner, R L; Wahl, H D; Wakisaka, T; Wallny, R; Wang, S M; Wang, M H L S; Wang, R-J; Warburton, A; Warchol, J; Waters, D; Watts, G; Wayne, M; Weichert, J; Welty-Rieger, L; Wester, W C; White, A; Whiteson, D; Wick, F; Wicke, D; Wicklund, A B; Wicklund, E; Wilbur, S; Williams, H H; Williams, M R J; Wilson, G W; Wilson, J S; Wilson, P; Winer, B L; Wittich, P; Wobisch, M; Wolbers, S; Wolfe, H; Wood, D R; Wright, T; Wu, X; Wu, Z; Wyatt, T R; Xie, Y; Yamada, R; Yamamoto, K; Yamato, D; Yang, S; Yang, T; Yang, U K; Yang, W-C; Yang, Y C; Yao, W-M; Yasuda, T; Yatsunenko, Y A; Ye, W; Ye, Z; Yeh, G P; Yi, K; Yin, H; Yip, K; Yoh, J; Yorita, K; Yoshida, T; Youn, S W; Yu, G B; Yu, I; Yu, J M; Yu, S S; Yun, J C; Zanetti, A; Zeng, Y; Zennamo, J; Zhao, T; Zhao, T G; Zhou, B; Zhou, C; Zhu, J; Zielinski, M; Zieminska, D; Zivkovic, L; Zucchelli, S

2012-08-17

We combine searches by the CDF and D0 Collaborations for the associated production of a Higgs boson with a W or Z boson and subsequent decay of the Higgs boson to a bottom-antibottom quark pair. The data, originating from Fermilab Tevatron pp collisions at √s = 1.96 TeV, correspond to integrated luminosities of up to 9.7 fb(-1). The searches are conducted for a Higgs boson with mass in the range 100-150 GeV/c(2). We observe an excess of events in the data compared with the background predictions, which is most significant in the mass range between 120 and 135 GeV/c(2). The largest local significance is 3.3 standard deviations, corresponding to a global significance of 3.1 standard deviations. We interpret this as evidence for the presence of a new particle consistent with the standard model Higgs boson, which is produced in association with a weak vector boson and decays to a bottom-antibottom quark pair.

Forward production of charged pions with incident protons on nuclear targets at the CERN Proton Synchrotron

DOE Office of Scientific and Technical Information (OSTI.GOV)

Apollonio, M.; Chimenti, P.; Giannini, G.

2009-09-15

Measurements of the double-differential {pi}{sup {+-}} production cross section in the range of momentum 0.5{<=}p{<=}8.0 GeV/c and angle 0.025{<=}{theta}{<=}0.25 rad in collisions of protons on beryllium, carbon, nitrogen, oxygen, aluminum, copper, tin, tantalum, and lead are presented. The data were taken with the large-acceptance HAdRon Production (HARP) detector in the T9 beamline of the CERN Proton Synchrotron. Incident particles were identified by an elaborate system of beam detectors. Thin targets of 5% of a nuclear interaction length were used. The tracking and identification of the produced particles were performed using the forward system of the HARP experiment. Results are obtainedmore » for the double-differential cross sections d{sup 2}{sigma}/dp d{omega} mainly at four incident proton beam momenta (3, 5, 8, and 12 GeV/c). Measurements are compared with the GEANT4 and MARS Monte Carlo generators. A global parametrization is provided as an approximation of all the collected datasets, which can serve as a tool for quick yield estimates.« less

Texture analysis of CoGe2 alloy films grown heteroepitaxially on GaAs(100) using partially ionized beam deposition

NASA Astrophysics Data System (ADS)

Mello, K. E.; Murarka, S. P.; Lu, T.-M.; Lee, S. L.

1997-06-01

Reflection x-ray pole figure analysis techniques were used to study the heteroepitaxial relationships of the cobalt germanide CoGe2 to GaAs(100). The alloy films were grown using the partially ionized beam deposition technique, in which low energy Ge+ ions are employed to alter the heteroepitaxial orientation of the CoGe2 deposits. The CoGe2[001](100)∥GaAs[100](001) orientation, which has the smallest lattice mismatch, was found to occur for depositions performed at a substrate temperature around 280 °C and with ˜1200 eV Ge+ ions. Lowering the substrate temperature or reducing the Ge+ ion energy leads to CoGe2(100) orientation domination with CoGe2[100](010)∥GaAs[100](001) and CoGe2[100](001)∥GaAs[100](001). Substrate temperature alone was seen to produce only the CoGe2(100) orientation. For CoGe2(001) films, additional energy was required from Ge+ ions in the evaporant stream.

Fabrication of Ge-on-insulator wafers by Smart-CutTM with thermal management for undamaged donor Ge wafers

NASA Astrophysics Data System (ADS)

Kim, Munho; Cho, Sang June; Jayeshbhai Dave, Yash; Mi, Hongyi; Mikael, Solomon; Seo, Jung-Hun; Yoon, Jung U.; Ma, Zhenqiang

2018-01-01

Newly engineered substrates consisting of semiconductor-on-insulator are gaining much attention as starting materials for the subsequent transfer of semiconductor nanomembranes via selective etching of the insulating layer. Germanium-on-insulator (GeOI) substrates are critically important because of the versatile applications of Ge nanomembranes (Ge NMs) toward electronic and optoelectronic devices. Among various fabrication techniques, the Smart-CutTM technique is more attractive than other methods because a high temperature annealing process can be avoided. Another advantage of Smart-CutTM is the reusability of the donor Ge wafer. However, it is very difficult to realize an undamaged Ge wafer because there exists a large mismatch in the coefficient of thermal expansion among the layers. Although an undamaged donor Ge wafer is a prerequisite for its reuse, research related to this issue has not yet been reported. Here we report the fabrication of 4-inch GeOI substrates using the direct wafer bonding and Smart-CutTM process with a low thermal budget. In addition, a thermo-mechanical simulation of GeOI was performed by COMSOL to analyze induced thermal stress in each layer of GeOI. Crack-free donor Ge wafers were obtained by annealing at 250 °C for 10 h. Raman spectroscopy and x-ray diffraction (XRD) indicated similarly favorable crystalline quality of the Ge layer in GeOI compared to that of bulk Ge. In addition, Ge p-n diodes using transferred Ge NM indicate a clear rectifying behavior with an on and off current ratio of 500 at ±1 V. This demonstration offers great promise for high performance transferrable Ge NM-based device applications.

Fabrication of SrGe2 thin films on Ge (100), (110), and (111) substrates.

PubMed

Imajo, T; Toko, K; Takabe, R; Saitoh, N; Yoshizawa, N; Suemasu, T

2018-01-16

Semiconductor strontium digermanide (SrGe 2 ) has a large absorption coefficient in the near-infrared light region and is expected to be useful for multijunction solar cells. This study firstly demonstrates the formation of SrGe 2 thin films via a reactive deposition epitaxy on Ge substrates. The growth morphology of SrGe 2 dramatically changed depending on the growth temperature (300-700 °C) and the crystal orientation of the Ge substrate. We succeeded in obtaining single-oriented SrGe 2 using a Ge (110) substrate at 500 °C. Development on Si or glass substrates will lead to the application of SrGe 2 to high-efficiency thin-film solar cells.

75 FR 47318 - GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and...

Federal Register 2010, 2011, 2012, 2013, 2014

2010-08-05

...] GE Asset Management Incorporated and GE Investment Distributors, Inc.; Notice of Application and.... Applicants: GE Asset Management Incorporated (``GEAM'') and GE Investment Distributors, Inc. (``GEID... of Investment Management, Office of Investment Company Regulation). SUPPLEMENTARY INFORMATION: The...

Structures and stability of metal-doped Ge nM (n = 9, 10) clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Wei; Lu, Wen-Cai; Xia, Lin-Hua

The lowest-energy structures of neutral and cationic Ge nM (n = 9, 10; M = Si, Li, Mg, Al, Fe, Mn, Pb, Au, Ag, Yb, Pm and Dy) clusters were studied by genetic algorithm (GA) and first-principles calculations. The calculation results show that doping of the metal atoms and Si into Ge 9 and Ge 10 clusters is energetically favorable. Most of the metal-doped Ge cluster structures can be viewed as adding or substituting metal atom on the surface of the corresponding ground-state Ge n clusters. However, the neutral and cationic FeGe 9,10,MnGe 9,10 and Ge 10Al are cage-like withmore » the metal atom encapsulated inside. Such cage-like transition metal doped Ge n clusters are shown to have higher adsorption energy and thermal stability. Our calculation results suggest that Ge 9,10Fe and Ge 9Si would be used as building blocks in cluster-assembled nanomaterials because of their high stabilities.« less

Photoluminescence and electroluminescence from Ge/strained GeSn/Ge quantum wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chung-Yi; Chang, Chih-Chiang; Huang, Chih-Hsiung

2016-08-29

Ge/strained GeSn/Ge quantum wells are grown on a 300 mm Si substrate by chemical vapor deposition. The direct bandgap emission from strained GeSn is observed in the photoluminescence spectra and is enhanced by Al{sub 2}O{sub 3}/SiO{sub 2} passivation due to the field effect. The electroluminescence of the direct bandgap emission of strained GeSn is also observed from the Ni/Al{sub 2}O{sub 3}/GeSn metal-insulator-semiconductor tunneling diodes. Electroluminescence is a good indicator of GeSn material quality, since defects in GeSn layers degrade the electroluminescence intensity significantly. At the accumulation bias, the holes in the Ni gate electrode tunnel to the strained n-type GeSn layermore » through the ultrathin Al{sub 2}O{sub 3} and recombine radiatively with electrons. The emission wavelength of photoluminescence and electroluminescence can be tuned by the Sn content.« less

Structures and stability of metal-doped Ge nM (n = 9, 10) clusters

DOE PAGES

Qin, Wei; Lu, Wen-Cai; Xia, Lin-Hua; ...

2015-06-26

The lowest-energy structures of neutral and cationic Ge nM (n = 9, 10; M = Si, Li, Mg, Al, Fe, Mn, Pb, Au, Ag, Yb, Pm and Dy) clusters were studied by genetic algorithm (GA) and first-principles calculations. The calculation results show that doping of the metal atoms and Si into Ge 9 and Ge 10 clusters is energetically favorable. Most of the metal-doped Ge cluster structures can be viewed as adding or substituting metal atom on the surface of the corresponding ground-state Ge n clusters. However, the neutral and cationic FeGe 9,10,MnGe 9,10 and Ge 10Al are cage-like withmore » the metal atom encapsulated inside. Such cage-like transition metal doped Ge n clusters are shown to have higher adsorption energy and thermal stability. Our calculation results suggest that Ge 9,10Fe and Ge 9Si would be used as building blocks in cluster-assembled nanomaterials because of their high stabilities.« less

DFT study of cyanide oxidation on surface of Ge-embedded carbon nanotube

NASA Astrophysics Data System (ADS)

Gao, Wei; Milad Abrishamifar, Seyyed; Ebrahimzadeh Rajaei, Gholamreza; Razavi, Razieh; Najafi, Meysam

2018-03-01

In recent years, the discovery of suitable catalyst to oxidation of the cyanide (CN) has high importance in the industry. In present study, in the first step, the carbon nanotube (CNT) with the Ge atom embedded and the surface of Ge-CNT via the O2 molecule activated. In second step, the oxidation of CN on surface of the Ge-CNT via the Langmuir Hinshelwood (LH) and the Eley Rideal (ER) mechanisms was investigated. Results show that O2-Ge-CNT oxidized the CN molecule via the Ge-CNT-O-O∗ + CN → Ge-CNT-O-O∗-CN → Ge-CNT-O∗ + OCN and the Ge-CNT-O∗ + CN → Ge-CNT + OCN reactions. Results show that oxidation of CN on surface of Ge-CNT via the LH mechanism has lower energy barrier than ER mechanism. Finally, calculated parameters reveal that Ge-CNT is acceptable catalyst with high performance for CN oxidation, form theoretical point of view.

Li3Ge3Se6: the first ternary lithium germanium selenide with interesting ∞[Ge6Se12]n chains constructed by ethane-like [Ge2Se6]6- clusters.

PubMed

Li, Guangmao; Zhen, Ni; Chu, Yu; Zhou, Zhongxiang

2017-12-21

Li 3 Ge 3 Se 6 , the first compound of the ternary Li/Ge/Se system, has been synthesized. Note that interesting 1D ∞ [Ge 6 Se 12 ] n chains constructed by ethane-like [Ge 2 Se 6 ] 6- clusters were discovered in its structure. Investigations on the structures of all the [Ge 2 Se 6 ] 6- cluster-containing compounds have shown that only in Li 3 Ge 3 Se 6 are there 1D chains composed of [Ge 2 Se 6 ] 6- clusters, which result from the space limitation within the tunnels surrounded by LiSe 6 octahedra. Raman spectrum was obtained to demonstrate the existence of Ge-Ge bonds. UV-visible-NIR diffuse reflection spectrum showed an optical bandgap of 2.08 eV. Theoretical calculations based on first principles have also been performed for its band structure and density of states to analyze its structure-property relationship.

Surface roughening of undoped and in situ B-doped SiGe epitaxial layers deposited by using reduced pressure chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kim, Youngmo; Park, Jiwoo; Sohn, Hyunchul

2018-01-01

Si1- x Ge x (:B) epitaxial layers were deposited by using reduced pressure chemical vapor deposition with SiH4, GeH4, and B2H6 source gases, and the dependences of the surface roughness of undoped Si1- x Ge x on the GeH4 flow rate and of Si1- x Ge x :B on the B2H6 flow rate were investigated. The root-mean-square (RMS) roughness value of the undoped Si1- x Ge x at constant thickness increased gradually with increasing Ge composition, resulting from an increase in the amplitude of the wavy surface before defect formation. At higher Ge compositions, the residual strain in Si1- x Ge x significantly decreased through the formation of defects along with an abrupt increase in the RMS roughness. The variation of the surface roughness of Si1- x Ge x :B depended on the boron (B) concentration. At low B concentrations, the RMS roughness of Si1- x Ge x remained constant regardless of Ge composition, which is similar to that of undoped Si1- x Ge x . However, at high B concentrations, the RMS roughness of Si1- x Ge x :B increased greatly due to B islanding. In addition, at very high B concentrations ( 9.9 at%), the RMS roughness of Si1- x Ge x :B decreased due to non-epitaxial growth.

Learning Democratic Global Governance.

ERIC Educational Resources Information Center

Haavelsrud, Magnus

1996-01-01

Outlines a model process of developing knowledge from within different groups and cultures to allow more equitable participation of all world societies in the definition of global governance. Reviews concepts relevant to education's contributions toward learning and creating democratic global governance. Discusses the educational utility of…

Structural and thermodynamic consideration of metal oxide doped GeO{sub 2} for gate stack formation on germanium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lu, Cimang, E-mail: cimang@adam.t.u-tokyo.ac.jp; Lee, Choong Hyun; Zhang, Wenfeng

2014-11-07

A systematic investigation was carried out on the material and electrical properties of metal oxide doped germanium dioxide (M-GeO{sub 2}) on Ge. We propose two criteria on the selection of desirable M-GeO{sub 2} for gate stack formation on Ge. First, metal oxides with larger cation radii show stronger ability in modifying GeO{sub 2} network, benefiting the thermal stability and water resistance in M-GeO{sub 2}/Ge stacks. Second, metal oxides with a positive Gibbs free energy for germanidation are required for good interface properties of M-GeO{sub 2}/Ge stacks in terms of preventing the Ge-M metallic bond formation. Aggressive equivalent oxide thickness scalingmore » to 0.5 nm is also demonstrated based on these understandings.« less

The effect of Ge precursor on the heteroepitaxy of Ge1-x Sn x epilayers on a Si (001) substrate

NASA Astrophysics Data System (ADS)

Jahandar, Pedram; Weisshaupt, David; Colston, Gerard; Allred, Phil; Schulze, Jorg; Myronov, Maksym

2018-03-01

The heteroepitaxial growth of Ge1-x Sn x on a Si (001) substrate, via a relaxed Ge buffer, has been studied using two commonly available commercial Ge precursors, Germane (GeH4) and Digermane (Ge2H6), by means of chemical vapour deposition at reduced pressures (RP-CVD). Both precursors demonstrate growth of strained and relaxed Ge1-x Sn x epilayers, however Sn incorporation is significantly higher when using the more reactive Ge2H6 precursor. As Ge2H6 is significantly more expensive, difficult to handle or store than GeH4, developing high Sn content epilayers using the latter precursor is of great interest. This study demonstrates the key differences between the two precursors and offers routes to process optimisation which will enable high Sn content alloys at relatively low cost.

Characterization of High Ge Content SiGe Heterostructures and Graded Alloy Layers Using Spectroscopic Ellipsometry

NASA Technical Reports Server (NTRS)

Heyd, A. R.; Alterovitz, S. A.; Croke, E. T.

1995-01-01

Si(x)Ge(1-x)heterostructures on Si substrates have been widely studied due to the maturity of Si technology. However, work on Si(x)Ge)1-x) heterostructures on Ge substrates has not received much attention. A Si(x)Ge(1-x) layer on a Si substrate is under compressive strain while Si(x)Ge(1-x) on Ge is under tensile strain; thus the critical points will behave differently. In order to accurately characterize high Ge content Si(x)Ge(1-x) layers the energy shift algorithm used to calculate alloy compositions, has been modified. These results have been used along with variable angle spectroscopic ellipsometry (VASE) measurements to characterize Si(x)Ge(1-x)/Ge superlattices grown on Ge substrates. The results agree closely with high resolution x-ray diffraction measurements made on the same samples. The modified energy shift algorithm also allows the VASE analysis to be upgraded in order to characterize linearly graded layers. In this work VASE has been used to characterize graded Si(x)Ge(1-x) layers in terms of the total thickness, and the start and end alloy composition. Results are presented for a 1 micrometer Si(x)Ge(1-x) layer linearly graded in the range 0.5 less than or equal to x less than or equal to 1.0.

A Three-Tier Diagnostic Test to Assess Pre-Service Teachers' Misconceptions about Global Warming, Greenhouse Effect, Ozone Layer Depletion, and Acid Rain

NASA Astrophysics Data System (ADS)

Ozge Arslan, Harika; Cigdemoglu, Ceyhan; Moseley, Christine

2012-07-01

This study describes the development and validation of a three-tier multiple-choice diagnostic test, the atmosphere-related environmental problems diagnostic test (AREPDiT), to reveal common misconceptions of global warming (GW), greenhouse effect (GE), ozone layer depletion (OLD), and acid rain (AR). The development of a two-tier diagnostic test procedure as described by Treagust constitutes the framework for this study. To differentiate a lack of knowledge from a misconception, a certainty response index is added as a third tier to each item. Based on propositional knowledge statements, related literature, and the identified misconceptions gathered initially from 157 pre-service teachers, the AREPDiT was constructed and administered to 256 pre-service teachers. The Cronbach alpha reliability coefficient of the pre-service teachers' scores was estimated to be 0.74. Content and face validations were established by senior experts. A moderate positive correlation between the participants' both-tiers scores and their certainty scores indicated evidence for construct validity. Therefore, the AREPDiT is a reliable and valid instrument not only to identify pre-service teachers' misconceptions about GW, GE, OLD, and AR but also to differentiate these misconceptions from lack of knowledge. The results also reveal that a majority of the respondents demonstrated limited understandings about atmosphere-related environmental problems and held six common misconceptions. Future studies could test the AREPDiT as a tool for assessing the misconceptions held by pre-service teachers from different programs as well as in-service teachers and high school students.

Monodisperse Ultrasmall Manganese-Doped Multimetallic Oxysulfide Nanoparticles as Highly Efficient Oxygen Reduction Electrocatalyst.

PubMed

Zhang, Yingying; Wang, Xiang; Hu, Dandan; Xue, Chaozhuang; Wang, Wei; Yang, Huajun; Li, Dongsheng; Wu, Tao

2018-04-25

The highly efficient and cheap non-Pt-based electrocatalysts such as transition-based catalysts prepared via facile methods for oxygen reduction reaction (ORR) are desirable for large-scale practical industry applications in energy conversion and storage systems. Herein, we report a straightforward top-down synthesis of monodisperse ultrasmall manganese-doped multimetallic (ZnGe) oxysulfide nanoparticles (NPs) as an efficient ORR electrocatalyst by simple ultrasonic treatment of the Mn-doped Zn-Ge-S chalcogenidometalate crystal precursors in H 2 O/EtOH for only 1 h at room temperature. Thus obtained ultrasmall monodisperse Mn-doped oxysulfide NPs with ultralow Mn loading level (3.92 wt %) not only exhibit comparable onset and half-wave potential (0.92 and 0.86 V vs reversible hydrogen electrode, respectively) to the commercial 20 wt % Pt/C but also exceptionally high metal mass activity (189 mA/mg at 0.8 V) and good methanol tolerance. A combination of transmission electron microscopy, scanning electron microscopy, X-ray photoelectron spectroscopy, and electrochemical analysis demonstrated that the homogenous distribution of a large amount of Mn(III) on the surface of NPs mainly accounts for the high ORR activity. We believe that this simple synthesis of Mn-doped multimetallic (ZnGe) oxysulfide NPs derived from chalcogenidometalates will open a new route to explore the utilization of discrete-cluster-based chalcogenidometalates as novel non-Pt electrocatalysts for energy applications and provide a facile way to realize the effective reduction of the amount of catalyst while keeping desired catalytic performances.

Rotarix® and RotaTeq® administration to preterm infants in the neonatal intensive care unit: Review of available evidence.

PubMed

Esposito, Susanna; Pugni, Lorenza; Mosca, Fabio; Principi, Nicola

2017-10-13

Rotavirus (RV) is the leading cause of severe acute gastroenteritis (GE) in infants worldwide. Several vaccines against RV were developed to reduce disease burden, hospitalization rates and health utilization costs. RV GE is a serious disease in preterm (PT) infants, and the administration of RV vaccine to these at-risk subjects at the proper time could have great clinical relevance. However, most data on the efficacy and safety of RV vaccinations were collected in healthy full-term infants, and few studies investigated PT infants. The lack of studies in PT infants may explain why neonatologists in several neonatal intensive care units (NICUs) do not follow the official recommendations, which indicate that RV vaccine may be administered in hospitals. Increasing neonatologists' knowledge on the efficacy and safety of RV vaccines and defining PT candidates for vaccination and the necessary precautions are extremely important to avoid potential vaccine virus transmission and improve RV vaccination coverage in PT infants. Further studies should analyse the impact of vaccination of PT infants of different gestational ages and various clinical histories in stable conditions in the NICU with a careful monitoring of adverse events to the vaccine and RV GE occurrence. Only data that confirm the efficacy and safety of RV vaccines in large numbers of PT infants with different characteristics will convince neonatologists to use RV vaccines in PT infants hospitalized in NICUs. Copyright © 2017. Published by Elsevier Ltd.

Measurement of jet suppression in central Pb–Pb collisions at s NN = 2.76 TeV

DOE PAGES

Adam, J.

2015-04-22

Here, the transverse momentum (p T) spectrum and nuclear modification factor (R AA) of reconstructed jets in 0–10% and 10–30% central Pb–Pb collisions at √s NN = 2.76 TeV were measured. Jets were reconstructed using the anti-k T jet algorithm with a resolution parameter of R=0.2 from charged and neutral particles, utilizing the ALICE tracking detectors and Electromagnetic Calorimeter (EMCal). The jet p T spectra are reported in the pseudorapidity interval of |η jet| < 0.5 for 40 < pT,jet < 120 GeV/c in 0–10% and for 30 < pT,jet < 100 GeV/c in 10–30% collisions. Reconstructed jets were requiredmore » to contain a leading charged particle with p T > 5 GeV/c to suppress jets constructed from the combinatorial background in Pb–Pb collisions. The leading charged particle requirement applied to jet spectra both in pp and Pb–Pb collisions had a negligible effect on the R AA. The nuclear modification factor R AA was found to be 0.28 ± 0.04 in 0–10% and 0.35 ± 0.04 in 10–30% collisions, independent of p T,jet within the uncertainties of the measurement. The observed suppression is in fair agreement with expectations from two model calculations with different approaches to jet quenching.« less

Trap density of GeNx/Ge interface fabricated by electron-cyclotron-resonance plasma nitridation

NASA Astrophysics Data System (ADS)

Fukuda, Yukio; Otani, Yohei; Toyota, Hiroshi; Ono, Toshiro

2011-07-01

We have investigated GeNx/Ge interface properties using Si3N4(7 nm)/GeNx(2 nm)/Ge metal-insulator-semiconductor structures fabricated by the plasma nitridation of Ge substrates using an electron-cyclotron-resonance-generated nitrogen plasma. The interface trap density (Dit) measured by the conductance method is found to be distributed symmetrically in the Ge band gap with a minimum Dit value lower than 3 × 1011 cm-2eV-1 near the midgap. This result may lead to the development of processes for the fabrication of p- and n-Ge Schottky-barrier (SB) source/drain metal-insulator-semiconductor field-effect transistors using chemically and thermally robust GeNx dielectrics as interlayers for SB source/drain contacts and high-κ gate dielectrics.

Analysis of composition and microstructures of Ge grown on porous silicon using Raman spectroscopy and transmission electron microscopy

NASA Astrophysics Data System (ADS)

Aouassa, Mansour; Jadli, Imen; Hassayoun, Latifa Slimen; Maaref, Hassen; Panczer, Gerard; Favre, Luc; Ronda, Antoine; Berbezier, Isabelle

2017-12-01

Composition and microstructure of Ge grown on porous silicon (PSi) by Molecular Beam Epitaxy (MBE) at different temperatures are examined using High Resolution Transmission Electron Microscopy (HRTEM) and Raman spectroscopy. Ge grown at 400 °C on PSi buffer produces a planar Ge film with high crystalline quality compared to Ge grown on bulk Si. This result is attributed to the compliant nature of PSi. Increasing growth temperature >600 °C, changes the PSi morphology, increase the Ge/Si intermixing in the pores during Ge growth and lead to obtain a composite SiGe/Si substrate. Ge content in the composite SiGe substrate can controlled via growth temperature. These substrates serve as low cost virtual substrate for high efficiency III-V/Si solar cells.

Magnetic properties influenced by interfaces in ultrathin Co/Ge(1 0 0) and Co/Ge(1 1 1) films

NASA Astrophysics Data System (ADS)

Tsay, J. S.; Yao, Y. D.; Cheng, W. C.; Tseng, T. K.; Wang, K. C.; Yang, C. S.

2003-10-01

Magnetic properties influenced by interfaces in ultrathin Co/Ge(1 0 0) and Co/Ge(1 1 1) films with thickness below 28 monolayers (ML) have been studied using the surface magneto-optic Kerr effect (SMOKE) technique. In both systems, the nonferromagnetic layer, as an interface between Co and Ge, plays an important role during annealing. In general, ultrathin Co films with fixed total thickness but fabricated at different temperatures on the same substrate, their Kerr hysteresis loops disappear roughly at the same temperature. This suggests that the thickness of the interfacial layer could inversely prevent the diffusion between Co and Ge substrate. From the annealing studies for both systems with total film thickness of 28 monolayers, we have found that Kerr signal disappears at 375 K for Co/Ge(1 1 1) and 425 K for Co/Ge(1 0 0) films. This suggests that Co/Ge(1 1 1) films possess a lower thermal stability than that of the Co/Ge(1 0 0) films. Our experimental data could be explained by different interfacial condition between Ge(1 0 0) and Ge(1 1 1), the different onset of interdiffusion, and the surface structure condition of Ge(1 0 0) and Ge(1 1 1).

Ternary germanides RERhGe2 (RE = Y, Gd-Ho) - New representatives of the YIrGe2 type

NASA Astrophysics Data System (ADS)

Voßwinkel, Daniel; Heletta, Lukas; Hoffmann, Rolf-Dieter; Pöttgen, Rainer

2016-11-01

The YIrGe2 type ternary germanides RERhGe2 (RE = Y, Gd-Ho) were synthesized from the elements by arc-melting and characterized by powder X-ray diffraction. The structure of DyRhGe2 was refined from single crystal X-ray diffractometer data: Immm, a = 426.49(9), b = 885.0(2), c = 1577.4(3) pm, wR2 = 0.0533, 637 F2 values, 30 variables (300 K data). The structure contains two crystallographically independent dysprosium atoms in pentagonal prismatic and hexagonal prismatic coordination. The three-dimensional [RhGe2] polyanion is stabilized through covalent Rh-Ge (243-261 pm) and Ge-Ge (245-251 pm) bonding. The close structural relationship with the slightly rhodium-poorer germanides RE5Rh4Ge10 (≡ RERh0.8Ge2) is discussed. Temperature-dependent magnetic susceptibility measurements reveal Pauli paramagnetism for YRhGe2 and Curie-Weiss paramagnetism for RERhGe2 with RE = Gd, Tb, Dy and Ho. These germanides order antiferromagnetically at TN = 7.2(5), 10.6(5), 8.1(5), and 6.4(5) K, respectively.

WiZard - an experiment to measure the cosmic rays including anti-protons, positrons, nuclei and to conduct a search for primordial antimatter

NASA Astrophysics Data System (ADS)

Golden, R. L.

1990-03-01

The WiZard experiment will utilize the Astromag magnet facility onboard Space Station Freedom to explore the composition and energy spectra of low-Z cosmic rays. Particular emphasis will be placed on a search for primordial antimatter and measurement of antiproton and positron fluxes at energies up to 400 GeV. This paper presents the scientific goals and rationale; the experimental method is described and the present status of the WiZard project is summarized.

Aviation and programmatic analyses; Volume 1, Task 1: Aviation data base development and application. [for NASA OAST programs

NASA Technical Reports Server (NTRS)

1977-01-01

A method was developed for using the NASA aviation data base and computer programs in conjunction with the GE management analysis and projection service to perform simple and complex economic analysis for planning, forecasting, and evaluating OAST programs. Capabilities of the system are discussed along with procedures for making basic data tabulations, updates and entries. The system is applied in an agricultural aviation study in order to assess its value for actual utility in the OAST working environment.

Photo-Production of Proton Antiproton Pairs

DOE Office of Scientific and Technical Information (OSTI.GOV)

Paul Eugenio; Burnham Stokes

2007-02-01

Results are reported on the reaction gammap --> ppp-bar . A high statistic data set was obtained at the Thomas Jefferson National Accelerator Facility utilizing the CLAS detector and a tagged photon beam of 4.8 to 5.2 GeV incident on a liquid hydrogen target. The focus of this study was to search for possible intermediate resonances which decay to proton-antiproton. Both final state protons were detected in the CLAS apparatus whereas the antiproton was identified via missing mass. General features of the data are presented along with results on narrow and broad resonance studies.

Controlling the near-field excitation of nano-antennas with phase-change materials.

PubMed

Kao, Tsung Sheng; Chen, Yi Guo; Hong, Ming Hui

2013-01-01

By utilizing the strongly induced plasmon coupling between discrete nano-antennas and quantitatively controlling the crystalline proportions of an underlying Ge2Sb2Te5 (GST) phase-change thin layer, we show that nanoscale light localizations in the immediate proximity of plasmonic nano-antennas can be spatially positioned. Isolated energy hot-spots at a subwavelength scale can be created and adjusted across the landscape of the plasmonic system at a step resolution of λ/20. These findings introduce a new approach for nano-circuitry, bio-assay addressing and imaging applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garton, W.R.S.; Connerade, J.

In tribute to the great contributions of Charlotte Moore Sitterly in critical compilations of Atomic Energy Levels, we collate some of the results from a 15-year program of atomic absorption spectroscopy of neutral species. The work reviewed has been based mainly on the utilization of the 0.5- and 2.5-GeV synchrotrons in Bonn. Such results and interpretations illustrate that no atomic structure is of the simple kind formerly associated with line series. (This applies even to the hydrogen atom, as regards Zeeman spectra.) Conversely, series can often be found in traditionally complex spectra.

Modeling Laser Effects on Multi-Junction Solar Cells Using Silvaco ATLAS Software for Spacecraft Power Beaming Applications

DTIC Science & Technology

2010-06-01

could not. Figure 11 shows the Indium Gallium Phosphide (InGaP)- Gallium Arsenide (GaAs)- Germanium (Ge) solar cell utilization of the solar spectrum...2 opcv nL  (4.4) p = 1, 2, 3, … nr = index of refraction of the cavity co = speed of light in a vacuum (m/s) L = cavity length (meters...illumination – ηsolar  Efficiency under solar illumination – n Number of electrons – nr Index of refraction –  Photon frequency Hz ΔFSR

Sn diffusion during Ni germanide growth on Ge1-xSnx

NASA Astrophysics Data System (ADS)

Demeulemeester, J.; Schrauwen, A.; Nakatsuka, O.; Zaima, S.; Adachi, M.; Shimura, Y.; Comrie, C. M.; Fleischmann, C.; Detavernier, C.; Temst, K.; Vantomme, A.

2011-11-01

We report on the redistribution of Sn during Ni germanide formation on Ge1-xSnx/ and its influence on the thin film growth and properties. These results show that the reaction involves the formation of Ni5Ge3 and NiGe. Sn redistributes homogenously in both phases, in which the Sn/Ge ratio retains the ratio of the as-deposited Ge1-xSnx film. Sn continues to diffuse after full NiGe formation and segregates in two regions: (1) at the interface between the germanide and Ge1-xSnx and (2) at the surface, which has major implications for the thin film and contact properties.

Properties of slow traps of ALD Al{sub 2}O{sub 3}/GeO{sub x}/Ge nMOSFETs with plasma post oxidation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ke, M., E-mail: kiramn@mosfet.t.u-tokyo.ac.jp; Yu, X.; Chang, C.

2016-07-18

The realization of Ge gate stacks with a small amount of slow trap density as well as thin equivalent oxide thickness and low interface state density (D{sub it}) is a crucial issue for Ge CMOS. In this study, we examine the properties of slow traps, particularly the location of slow traps, of Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge and HfO{sub 2}/Al{sub 2}O{sub 3}/GeO{sub x}/n-Ge MOS interfaces with changing the process and structural parameters, formed by atomic layer deposition (ALD) of Al{sub 2}O{sub 3} and HfO{sub 2}/Al{sub 2}O{sub 3} combined with plasma post oxidation. It is found that the slow traps can locatemore » in the GeO{sub x} interfacial layer, not in the ALD Al{sub 2}O{sub 3} layer. Furthermore, we study the time dependence of channel currents in the Ge n-MOSFETs with 5-nm-thick Al{sub 2}O{sub 3}/GeO{sub x}/Ge gate stacks, with changing the thickness of GeO{sub x}, in order to further clarify the position of slow traps. The time dependence of the current drift and the effective time constant of slow traps do not change among the MOSFETs with the different thickness GeO{sub x}, demonstrating that the slow traps mainly exist near the interfaces between Ge and GeO{sub x}.« less

Ge auto-doping and out-diffusion in InGaP grown on Ge substrate and their effects on the ordering of InGaP

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu, Hong-Ming; Ho, Hao-I; Tsai, Shi-Jane

2016-03-21

We report on the Ge auto-doping and out-diffusion in InGaP epilayer with Cu-Pt ordering grown on 4-in. Ge substrate. Ge profiles determined from secondary ion mass spectrometry indicate that the Ge out-diffusion depth is within 100 nm. However, the edge of the wafer suffers from stronger Ge gas-phase auto-doping than the center, leading to ordering deterioration in the InGaP epilayer. In the edge, we observed a residual Cu-Pt ordering layer left beneath the surface, suggesting that the ordering deterioration takes place after the deposition rather than during the deposition and In/Ga inter-diffusion enhanced by Ge vapor-phase auto-doping is responsible for themore » deterioration. We thus propose a di-vacancy diffusion model, in which the amphoteric Ge increases the di-vacancy density, resulting in a Ge density dependent diffusion. In the model, the In/Ga inter-diffusion and Ge out-diffusion are realized by the random hopping of In/Ga host atoms and Ge atoms to di-vacancies, respectively. Simulation based on this model well fits the Ge out-diffusion profiles, suggesting its validity. By comparing the Ge diffusion coefficient obtained from the fitting and the characteristic time constant of ordering deterioration estimated from the residual ordering layer, we found that the hopping rates of Ge and the host atoms are in the same order of magnitude, indicating that di-vacancies are bound in the vicinity of Ge atoms.« less

Utilizing the Elements of National Power to Predict Ungoverned Space

DTIC Science & Technology

2007-05-07

3Globalsecurity.org, Where are the Legions? [ SPQR ] Global Deployments of US Forces, Available from http://www.globalsecurity.org/military/ops/global...NY: Cornell University Press, 2004. Globalsecurity.org. Where Are the Legions? [ SPQR ] Global Depoyments of US Forces. Available from http

Exploring Universality: Does the World Really Use the Same Numbers?

ERIC Educational Resources Information Center

Klemm, Rebecca; Wallace, Rachel

2017-01-01

Arguably one of the most under-appreciated, yet ubiquitous and frequently utilized aspects of modern, globalized society, our number system exemplifies how we are inextricably interconnected. Indeed, without a universal number system, there would be no global collaboration and no global solutions.

Effects of Global Budgeting on the Distribution of Dentists and Use of Dental Care in Taiwan

PubMed Central

Hsueh, Ya-Seng A; Lee, Shoou-Yih D; Huang, Yu-Tung A

2004-01-01

Objective To examine the effects of global budgeting on the distribution of dentists and the use and cost of dental care in Taiwan. Data Sources (1) Monthly dental claim data from January 1996 to December 2001 for the entire insured population in Taiwan. (2) The 1996–2001 population information for the cities, counties and townships in Taiwan, abstracted from the Taiwan-Fukien Demographic Fact Book. Study Design Longitudinal, using the autocorrelation model. Principal Findings Results indicated decline in dental care utilization, particularly after the implementation of dental global budgeting. With few exceptions, dental global budgeting did not improve the distribution of dental care and dentist supply. Conclusions The experience of the dental global budget program in Taiwan suggested that dental global budgeting might contain dental care utilization and that several conditions might have to be met in order for the reimbursement system to have effective redistributive impact on dental care and dentist supply. PMID:15544648

Prognosis of Light Chain Amyloidosis With Preserved LVEF: Added Value of 2D Speckle-Tracking Echocardiography to the Current Prognostic Staging System.

PubMed

Barros-Gomes, Sergio; Williams, Brittney; Nhola, Lara F; Grogan, Martha; Maalouf, Joseph F; Dispenzieri, Angela; Pellikka, Patricia A; Villarraga, Hector R

2017-04-01

This study evaluated whether 2-dimensional speckle-tracking echocardiography (2D-STE) has incremental value for prognosis over traditional clinical, echocardiographic, and serological markers-with main focus on the current prognostic staging system-in light-chain (AL) amyloidosis patients with preserved left ventricular ejection fraction. Cardiac amyloidosis (CA) is the major determinant of outcome in AL amyloidosis. The current prognostic staging system is based primarily on serum levels of cardiac troponin T (cTnT), N-terminal pro-B-type natriuretic peptide (NT-proBNP), and free light chain differential (FLC-diff). Consecutive patients with biopsy-proven AL amyloidosis and left ventricular ejection fraction ≥55% were divided into group 1 with CA (n = 63) and group 2 without CA (n = 87). Global longitudinal strain (GLS) by 2D-STE was performed with Vivid E9 (GE Healthcare Co., Milwaukee, Wisconsin) and syngo Velocity Vector Imaging (VVI) software (Siemens Medical Solutions USA, Inc., Malvern, Pennsylvania) (GLS GE and GLS VVI , respectively). Thirty-two deaths (51%) occurred in group 1 and 13 (15%) in group 2 (p ≤ 0.001). Group 1 had thicker walls, lower early diastolic tissue Doppler velocity at septal mitral annulus, and greater left ventricular mass, left atrial volume, glomerular filtration rate, FLC-diff, cTnT, and NT-proBNP (p < 0.001). For the entire cohort, GLS GE  ≥ -14.81, GLS VVI ≥-15.02, cTnT, NT-proBNP, FLC-diff, age, left ventricular wall thickness, early diastolic tissue Doppler velocity at septal mitral annulus, diastolic dysfunction grade, glomerular filtration rate, deceleration time, and left atrial volume were univariate predictors of death. In a multivariate Cox model, GLS GE ≥-14.81 (hazard ratio [HR]: 2.68; 95% confidence interval [CI]: 1.07 to 7.13; p = 0.03), FLC-diff, NT-proBNP, and age were independent predictors of survival. There was also a strong trend for GLS VVI ≥-15.02 (HR: 2.44; 95% CI: 0.98 to 6.33; p = 0.055). Using a nested logistic regression model, GLS GE (p = 0.03) and GLS VVI (p = 0.05) provided incremental prognostic value over cTnT, NT-proBNP, and FLC-diff. For survival analysis limited to group 2 (non-CA), GLS GE and GLS VVI both predicted all-cause mortality (GLS GE HR: 1.23; 95% CI: 1.03 to 1.47 [p = 0.02]; GLS VVI HR: 1.22; 95% CI: 1.01 to 1.49 [p = 0.04], respectively). 2D-STE predicted outcome and provided incremental prognostic information over the current prognostic staging system, especially in the group without CA. Copyright © 2017 American College of Cardiology Foundation. Published by Elsevier Inc. All rights reserved.

Structures and stability of metal-doped Ge{sub n}M (n = 9, 10) clusters

DOE Office of Scientific and Technical Information (OSTI.GOV)

Qin, Wei, E-mail: qinw@qdu.edu.cn; Xia, Lin-Hua; Zhao, Li-Zhen

The lowest-energy structures of neutral and cationic Ge{sub n}M (n = 9, 10; M = Si, Li, Mg, Al, Fe, Mn, Pb, Au, Ag, Yb, Pm and Dy) clusters were studied by genetic algorithm (GA) and first-principles calculations. The calculation results show that doping of the metal atoms and Si into Ge{sub 9} and Ge{sub 10} clusters is energetically favorable. Most of the metal-doped Ge cluster structures can be viewed as adding or substituting metal atom on the surface of the corresponding ground-state Ge{sub n} clusters. However, the neutral and cationic FeGe{sub 9,10},MnGe{sub 9,10} and Ge{sub 10}Al are cage-like withmore » the metal atom encapsulated inside. Such cage-like transition metal doped Ge{sub n} clusters are shown to have higher adsorption energy and thermal stability. Our calculation results suggest that Ge{sub 9,10}Fe and Ge{sub 9}Si would be used as building blocks in cluster-assembled nanomaterials because of their high stabilities.« less

Theoretical calculation of performance enhancement in lattice-matched SiGeSn/GeSn p-channel tunneling field-effect transistor with type-II staggered tunneling junction

NASA Astrophysics Data System (ADS)

Wang, Hongjuan; Han, Genquan; Wang, Yibo; Peng, Yue; Liu, Yan; Zhang, Chunfu; Zhang, Jincheng; Hu, Shengdong; Hao, Yue

2016-04-01

In this work, a lattice-matched SiGeSn/GeSn heterostructure p-channel tunneling field-effect transistor (hetero-PTFET) with a type-II staggered tunneling junction (TJ) is investigated theoretically. Lattice matching and type-II band alignment at the Γ-point is obtained at the SiGeSn/GeSn interface by tuning Sn and Si compositions. A steeper subthreshold swing (SS) and a higher on state current (I ON) are demonstrated in SiGeSn/GeSn hetero-PTFET than in GeSn homo-PTFET. Si0.31Ge0.49Sn0.20/Ge0.88Sn0.12 hetero-PTFET achieves a 2.3-fold higher I ON than Ge0.88Sn0.12 homo-PTFET at V DD of 0.3 V. Hetero-PTFET achieves a more abrupt hole profile and a higher carrier density near TJ than the homo-PTFET, which contributes to the significantly enhanced band-to-band tunneling (BTBT) rate and tunneling current in hetero-PTFET.

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Washizu, Tomoya; Ike, Shinichi; Inuzuka, Yuki; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

2017-06-01

Selective epitaxial growth of Ge and Ge1-xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effects of growth temperature and total pressure during growth on the selectivity and the crystallinity of the Ge and Ge1-xSnx epitaxial layers. Under low total pressure growth conditions, the dominant mechanism of the selective growth of Ge epitaxial layers is the desorption of the Ge precursors. At a high total pressure case, it is needed to control the surface migration of precursors to realize the selectivity because the desorption of Ge precursors was suppressed. The selectivity of Ge growth was improved by diffusion of the Ge precursors on the SiO2 surfaces when patterned substrates were used at a high total pressure. The selective epitaxial growth of Ge1-xSnx layer was also realized using MOCVD. We found that the Sn precursors less likely to desorb from the SiO2 surfaces than the Ge precursors.

POLLUTION CONTROL FOR UTILITY POWER GENERATION, 1990-2020

EPA Science Inventory

The paper discusses pollution control for utility power generation between the years 1990 and 2020, when the major anticipated environmental challenges facing the utility industry will be acid deposition control in the near term and global warming mitigation in the longer term. T...

Influences of market competition on dental care utilization under the global budget payment system.

PubMed

Tsai, Wen-Chen; Kung, Pei-Tseng; Chang, Wei-Chieh

2007-12-01

The degrees of market competition usually influence providers' behaviors. This study investigated the influence of medical market competition on the utilization of dental care under the global budget payment system. This study also examined the relative factors that influence the utilization of dental care. This study used the healthcare sub-regions (HCSRs) in the healthcare net as the observation units. The dataset was the National Health Insurance dental care claim data from 1999 to 2002. The degree of market competition of dental care was measured by the Herfindahl Index (HI). The influences of medical market competition on the utilization of dental care were analyzed by multiple linear regression analysis. When the market had a higher degree of competition, people had a higher number of dental utilizations after controlling for the other variables. When market competition increased by 1%, annual expenditures and frequencies of dental care as well as frequencies of tooth-filling per person increased by 0.4%. Thirty-three percent of dental expenditures could be explained by increases in the degree of market competition. Females or highly educated people had a positive correlation with dental utilization. However, the agricultural population negatively correlated with dental utilization. Average household income had no significant relationship with the frequency of dental care but had a significant negative association with dental expenditures when dental care was covered by health insurance. After the global budget payment system for dental care was implemented, increases in dental care market competition led to the increase in utilization of dental care services.

Strain analysis of SiGe microbridges

NASA Astrophysics Data System (ADS)

Anthony, Ross; Gilbank, Ashley; Crowe, Iain; Knights, Andrew

2018-02-01

We present the analysis of UV (325 nm) Raman scattering spectra from silicon-germanium (SiGe) microbridges where the SiGe has been formed using the so-called "condensation technique". As opposed to the conventional condensation technique in which SiGe is grown epitaxially, we use high-dose ion implantation of Ge ions into SOI as a means to introduce the initial Ge profile. The subsequent oxidation both repairs implantation induced damage, and forms epitaxial Ge. Using Si-Si and Si-Ge optical phonon modes, as well as the ratio of integrated intensities for Ge-Ge and Si-Si, we can determine both the composition and strain of the material. We show that although the material is compressively strained following condensation, by fabricating microbridge structures we can create strain relaxed or tensile strained structures, with subsequent interest for photonic applications.

Carbon Chains Containing Group IV Elements: Rotational Detection of GeC_4 and GeC_5

NASA Astrophysics Data System (ADS)

McCarthy, Michael C.; Martin-Drumel, Marie-Aline; Thorwirth, Sven

2017-06-01

Following the recent discovery of T-shaped GeC_2 by chirped-pulse FT microwave spectroscopy, evidence has been found for two longer carbon chains, GeC_4 and GeC_5, guided by high-level quantum chemical calculations of their molecular structure. Like their isovalent Si-bearing counterparts, those with an even number of carbon atoms are predicted to possess ^1Σ ground states, while odd-numbered carbon chains have low-lying ^3Σ linear isomers; all are predicted to be highly polar. With the exception of ^{73}Ge, rotational lines of the other four Ge isotopic species have been observed between 6 and 18 GHz. From these measurements, the Ge-C bond length has been determined to high precision, and can be compared to that found in other Ge species, such as GeC [1] and GeC_3Ge [2] studied previously at rotational resolution. Somewhat surprisingly, the spectrum of GeC_5 very closely resembles that of ^1Σ molecule, presumably owing to the very large spin-orbit constant of atomic Ge, which is manifest as an equally large spin-spin constant in the chain. A comparison between the production of SiC_n and GeC_n chains by laser ablation, including the absence of those with n=3, will be given. [1] C. R. Brazier and J. I. Ruiz, J. Mol. Spectrosc., 270, 26-32 (2011). [2] S. Thorwirth et al., J. Phys. Chem. A, 120, 254-259 (2016).

Remote interfacial dipole scattering and electron mobility degradation in Ge field-effect transistors with GeO x /Al2O3 gate dielectrics

NASA Astrophysics Data System (ADS)

Wang, Xiaolei; Xiang, Jinjuan; Wang, Shengkai; Wang, Wenwu; Zhao, Chao; Ye, Tianchun; Xiong, Yuhua; Zhang, Jing

2016-06-01

Remote Coulomb scattering (RCS) on electron mobility degradation is investigated experimentally in Ge-based metal-oxide-semiconductor field-effect-transistors (MOSFETs) with GeO x /Al2O3 gate stacks. It is found that the mobility increases with greater GeO x thickness (7.8-20.8 Å). The physical origin of this mobility dependence on GeO x thickness is explored. The following factors are excluded: Coulomb scattering due to interfacial traps at GeO x /Ge, phonon scattering, and surface roughness scattering. Therefore, the RCS from charges in gate stacks is studied. The charge distributions in GeO x /Al2O3 gate stacks are evaluated experimentally. The bulk charges in Al2O3 and GeO x are found to be negligible. The density of the interfacial charge is  +3.2  ×  1012 cm-2 at the GeO x /Ge interface and  -2.3  ×  1012 cm-2 at the Al2O3/GeO x interface. The electric dipole at the Al2O3/GeO x interface is found to be  +0.15 V, which corresponds to an areal charge density of 1.9  ×  1013 cm-2. The origin of this mobility dependence on GeO x thickness is attributed to the RCS due to the electric dipole at the Al2O3/GeO x interface. This remote dipole scattering is found to play a significant role in mobility degradation. The discovery of this new scattering mechanism indicates that the engineering of the Al2O3/GeO x interface is key for mobility enhancement and device performance improvement. These results are helpful for understanding and engineering Ge mobility enhancement.

Density-functional theory molecular dynamics simulations of a-HfO2/Ge(100)(2 × 1) and a-ZrO2/Ge(100)(2 × 1) interface passivation.

PubMed

Chagarov, E A; Porter, L; Kummel, A C

2016-02-28

The structural properties of a-HfO2/Ge(2 × 1)-(001) and a-ZrO2/Ge(2 × 1)-(001) interfaces were investigated with and without a GeOx interface interlayer using density-functional theory (DFT) molecular dynamics (MD) simulations. Realistic a-HfO2 and a-ZrO2 samples were generated using a hybrid classical-DFT MD "melt-and-quench" approach and tested against experimental properties. The oxide/Ge stacks were annealed at 700 K, cooled to 0 K, and relaxed providing the system with enough freedom to form realistic interfaces. For each high-K/Ge stack type, two systems with single and double interfaces were investigated. All stacks were free of midgap states; however, stacks with a GeO(x) interlayer had band-edge states which decreased the band gaps by 0%-30%. These band-edge states were mainly produced by under-coordinated Ge atoms in GeO(x) layer or its vicinity due to deformation, intermixing, and bond-breaking. The DFT-MD simulations show that electronically passive interfaces can be formed either directly between high-K dielectrics and Ge or with a monolayer of GeO2 if the processing does not create or properly passivate under-coordinated Ge atoms and Ge's with significantly distorted bonding angles. Comparison to the charge states of the interfacial atoms from DFT to experimental x-ray photoelectron spectroscopy results shows that while most studies of gate oxide on Ge(001) have a GeO(x) interfacial layer, it is possible to form an oxide/Ge interface without a GeO(x) interfacial layer. Comparison to experiments is consistent with the dangling bonds in the suboxide being responsible for midgap state formation.

Si based GeSn light emitter: mid-infrared devices in Si photonics

NASA Astrophysics Data System (ADS)

Yu, S. Q.; Ghetmiri, S. A.; Du, W.; Margetis, J.; Zhou, Y.; Mosleh, A.; Al-Kabi, S.; Nazzal, A.; Sun, G.; Soref, R. A.; Tolle, J.; Li, B.; Naseem, H. A.

2015-02-01

Ge1-xSnx/Ge thin films and Ge/Ge1-xSnx/Ge n-i-p double heterostructure (DHS) have been grown using commercially available reduced pressure chemical vapor deposition (RPCVD) reactor. The Sn compositional material and optical characteristics have been investigated. A direct bandgap GeSn material has been identified with Sn composition of 10%. The GeSn DHS samples were fabricated into LED devices. Room temperature electroluminescence spectra were studied. A maximum emission power of 28mW was obtained with 10% Sn LED under the injection current density of 800 A/cm2.

Formation of nanocrystalline SiGe in Polycrystalline-Ge/Si thin film without any metal induced crystallization

NASA Astrophysics Data System (ADS)

Tah, Twisha; Singh, Ch. Kishan; Madapu, K. K.; Polaki, S. R.; Ilango, S.; David, C.; Dash, S.; Panigrahi, B. K.

2017-05-01

The formation of nanocrystalline SiGe without the aid of metal induced crystallization is reported. Re-crystallization of the as-deposited poly-Ge film (deposited at 450 °C) leads to development of regions with depleted Ge concentration upon annealing at 500 °C. Clusters with crystalline facet containing both nanocrystalline SiGe and crystalline Ge phase starts appearing at 600 °C. The structural phase characteristics were investigated by X-ray diffraction (XRD) and Raman spectroscopy. The stoichiometry of the SiGe phase was estimated from the positions of the Raman spectral peaks.

Diet density during the first week of life: Effects on energy and nitrogen balance characteristics of broiler chickens.

PubMed

Lamot, D M; Sapkota, D; Wijtten, P J A; van den Anker, I; Heetkamp, M J W; Kemp, B; van den Brand, H

2017-07-01

This study aimed to determine effects of diet density on growth performance, energy balance, and nitrogen (N) balance characteristics of broiler chickens during the first wk of life. Effects of diet density were studied using a dose-response design consisting of 5 dietary fat levels (3.5, 7.0, 10.5, 14.0, and 17.5%). The relative difference in dietary energy level was used to increase amino acid levels, mineral levels, and the premix inclusion level at the same ratio. Chickens were housed in open-circuit climate respiration chambers from d 0 to 7 after hatch. Body weight was measured on d 0 and 7, whereas feed intake was determined daily. For calculation of energy balances, O2 and CO2 exchange were measured continuously and all excreta from d 0 to 7 was collected and analyzed at d 7. Average daily gain (ADG) and average daily feed intake (ADFI) decreased linearly (P = 0.047 and P < 0.001, respectively), whereas gain to feed ratio increased (P < 0.001) with increasing diet density. Gross energy (GE) intake and metabolizable energy (ME) intake were not affected by diet density, but the ratio between ME and GE intake decreased linearly with increasing diet density (P = 0.006). Fat, N, and GE efficiencies (expressed as gain per unit of nutrient intake), heat production, and respiratory exchange ratio (CO2 to O2 ratio) decreased linearly (P < 0.001) as diet density increased. Energy retention, N intake, and N retention were not affected by diet density. We conclude that a higher diet density in the first wk of life of broiler chickens did not affect protein and fat retention, whereas the ME to GE ratio decreased linearly with increased diet density. This suggests that diet density appears to affect digestibility rather than utilization of nutrients. © 2017 Poultry Science Association Inc.

The use of dried cerebrospinal fluid filter paper spots as a substrate for PCR diagnosis of the aetiology of bacterial meningitis in the Lao PDR

PubMed Central

Elliott, I; Dittrich, S; Paris, D; Sengduanphachanh, A; Phoumin, P; Newton, P N

2013-01-01

We investigated whether dried cerebrospinal fluid (CSF) conserved on filter paper can be used as a substrate for accurate PCR diagnosis of important causes of bacterial meningitis in the Lao PDR. Using mock CSF, we investigated and optimized filter paper varieties, paper punch sizes, elution volumes and quantities of DNA template to achieve sensitive and reliable detection of bacterial DNA from filter paper specimens. FTA Elute Micro Card™ (Whatman, Maidstone, UK) was the most sensitive, consistent and practical variety of filter paper. Following optimization, the lower limit of detection for Streptococcus pneumoniae from dried mock CSF spots was 14 genomic equivalents (GE)/μL (interquartile range 5.5 GE/μL) or 230 (IQR 65) colony forming units/mL. A prospective clinical evaluation for S. pneumoniae, S. suis and Neisseria meningitidis was performed. Culture and PCR performed on fresh liquid CSF from patients admitted with a clinical diagnosis of meningitis (n = 73) were compared with results derived from dried CSF spots. Four of five fresh PCR-positive CSF samples also tested PCR positive from dried CSF spots, with one patient under the limit of detection. In a retrospective study of S. pneumoniae samples (n = 20), the median (IQR; range) CSF S. pneumoniae bacterial load was 1.1 × 104 GE/μL (1.2 × 105; 1 to 6.1 × 106 DNA GE/μL). Utilizing the optimized methodology, we estimate an extrapolated sensitivity of 90%, based on the range of CSF genome counts found in Laos. Dried CSF filter paper spots could potentially help us to better understand the epidemiology of bacterial meningitis in resource-poor settings and guide empirical treatments and vaccination policies. PMID:23738720

Automated J wave detection from digital 12-lead electrocardiogram.

PubMed

Wang, Yi Grace; Wu, Hau-Tieng; Daubechies, Ingrid; Li, Yabing; Estes, E Harvey; Soliman, Elsayed Z

2015-01-01

In this report we provide a method for automated detection of J wave, defined as a notch or slur in the descending slope of the terminal positive wave of the QRS complex, using signal processing and functional data analysis techniques. Two different sets of ECG tracings were selected from the EPICARE ECG core laboratory, Wake Forest School of Medicine, Winston Salem, NC. The first set was a training set comprised of 100 ECGs of which 50 ECGs had J-wave and the other 50 did not. The second set was a test set (n=116 ECGs) in which the J-wave status (present/absent) was only known by the ECG Center staff. All ECGs were recorded using GE MAC 1200 (GE Marquette, Milwaukee, Wisconsin) at 10mm/mV calibration, speed of 25mm/s and 500HZ sampling rate. All ECGs were initially inspected visually for technical errors and inadequate quality, and then automatically processed with the GE Marquette 12-SL program 2001 version (GE Marquette, Milwaukee, WI). We excluded ECG tracings with major abnormalities or rhythm disorder. Confirmation of the presence or absence of a J wave was done visually by the ECG Center staff and verified once again by three of the coauthors. There was no disagreement in the identification of the J wave state. The signal processing and functional data analysis techniques applied to the ECGs were conducted at Duke University and the University of Toronto. In the training set, the automated detection had sensitivity of 100% and specificity of 94%. For the test set, sensitivity was 89% and specificity was 86%. In conclusion, test results of the automated method we developed show a good J wave detection accuracy, suggesting possible utility of this approach for defining and detection of other complex ECG waveforms. Copyright © 2015 Elsevier Inc. All rights reserved.

Study of plutonium disposition using the GE Advanced Boiling Water Reactor (ABWR)

DOE Office of Scientific and Technical Information (OSTI.GOV)

NONE

1994-04-30

The end of the cold war and the resulting dismantlement of nuclear weapons has resulted in the need for the U.S. to disposition 50 to 100 metric tons of excess of plutonium in parallel with a similar program in Russia. A number of studies, including the recently released National Academy of Sciences (NAS) study, have recommended conversion of plutonium into spent nuclear fuel with its high radiation barrier as the best means of providing long-term diversion resistance to this material. The NAS study {open_quotes}Management and Disposition of Excess Weapons Plutonium{close_quotes} identified light water reactor spent fuel as the most readilymore » achievable and proven form for the disposition of excess weapons plutonium. The study also stressed the need for a U.S. disposition program which would enhance the prospects for a timely reciprocal program agreement with Russia. This summary provides the key findings of a GE study where plutonium is converted into Mixed Oxide (MOX) fuel and a 1350 MWe GE Advanced Boiling Water Reactor (ABWR) is utilized to convert the plutonium to spent fuel. The ABWR represents the integration of over 30 years of experience gained worldwide in the design, construction and operation of BWRs. It incorporates advanced features to enhance reliability and safety, minimize waste and reduce worker exposure. For example, the core is never uncovered nor is any operator action required for 72 hours after any design basis accident. Phase 1 of this study was documented in a GE report dated May 13, 1993. DOE`s Phase 1 evaluations cited the ABWR as a proven technical approach for the disposition of plutonium. This Phase 2 study addresses specific areas which the DOE authorized as appropriate for more in-depth evaluations. A separate report addresses the findings relative to the use of existing BWRs to achieve the same goal.« less

SU-F-BRA-08: An Investigation of Well-Chamber Responses for An Electronic Brachytherapy Source

DOE Office of Scientific and Technical Information (OSTI.GOV)

Culberson, W; Micka, J

Purpose: The aim of this study was to investigate the variation of well-type ionization chamber response between a Xoft Axxent™ electronic brachytherapy (EBT) source and a GE Oncoseed™ 6711 I-125 seed. Methods: A new EBT air-kerma standard has recently been introduced by the National Institute of Standards and Technology (NIST). Historically, the Axxent source strength has been based on a well chamber calibration from an I-125 brachytherapy source due to the lack of a primary standard. Xoft utilizes a calibration procedure that employs a GE 6711 seed calibration as a surrogate standard to represent the air-kerma strength of an Axxentmore » source. This method is based on the premise that the energies of the two sources are similar and thus, a conversion factor would be a suitable interim solution until a NIST standard was established. For this investigation, a number of well chambers of the same model type and three different EBT sources were used to determine NIST-traceable calibration coefficients for both the GE 6711 seed and the Axxent source. The ratio of the two coefficients was analyzed for consistency and also to identify any possible correlations with chamber vintage or the sources themselves. Results: For all well chambers studied, the relative standard deviation of the ratio of calibration coefficients between the two standards is less than 1%. No specific trends were found with the well chamber vintage or between the three different EBT sources used. Conclusion: The variation of well chamber calibration coefficients between a Xoft Axxent™ EBT source versus a GE 6711 Oncoseed™ are consistent across well chamber vintage and between sources. The results of this investigation confirm the underlying assumptions and stability of the surrogate standard currently in use by Xoft, and establishes a migration path for future implementation of the new NIST air kerma standard. This research is supported in part by Xoft, a subsidiary of iCAD.« less

Ge-cap quantum-well bulk FinFET for 5 nm node CMOS integration

NASA Astrophysics Data System (ADS)

Dwi Kurniawan, Erry; Peng, Kang-Hui; Yang, Shang-Yi; Yang, Yi-Yun; Thirunavukkarasu, Vasanthan; Lin, Yu-Hsien; Wu, Yung-Chun

2018-04-01

We propose the use of Ge-cap quantum-well (QW) bulk FinFET for 5 nm CMOS integration, which is a Si channel wrapped with Ge around three sides of the fin channel. The simulation results show that the Ge-cap FinFET structure demonstrates better performance than pure Si, pure Ge, and Si-cap FinFET structures. By optimizing Si fin width and Ge-cap thickness, the on-state current of nFET and pFET can also be symmetric without changing the total fin width (F Wp = F Wn). The electrons in Ge-cap nFinFET concentrate in the Si channel because of QWs formed in the lowest conduction band of the Ge and Si heterostructure, while the holes in Ge-cap pFinFET prefer to stay in Ge surfaces owing to QWs formed in the Ge valence band. The physics studies of this device have made the design rules relevant for the application of the CMOS inverter and static random access memory (SRAM) application technology.

Optimization of Multiple Related Negotiation through Multi-Negotiation Network

NASA Astrophysics Data System (ADS)

Ren, Fenghui; Zhang, Minjie; Miao, Chunyan; Shen, Zhiqi

In this paper, a Multi-Negotiation Network (MNN) and a Multi- Negotiation Influence Diagram (MNID) are proposed to optimally handle Multiple Related Negotiations (MRN) in a multi-agent system. Most popular, state-of-the-art approaches perform MRN sequentially. However, a sequential procedure may not optimally execute MRN in terms of maximizing the global outcome, and may even lead to unnecessary losses in some situations. The motivation of this research is to use a MNN to handle MRN concurrently so as to maximize the expected utility of MRN. Firstly, both the joint success rate and the joint utility by considering all related negotiations are dynamically calculated based on a MNN. Secondly, by employing a MNID, an agent's possible decision on each related negotiation is reflected by the value of expected utility. Lastly, through comparing expected utilities between all possible policies to conduct MRN, an optimal policy is generated to optimize the global outcome of MRN. The experimental results indicate that the proposed approach can improve the global outcome of MRN in a successful end scenario, and avoid unnecessary losses in an unsuccessful end scenario.

Formation of nickel germanides from Ni layers with thickness below 10 nm

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jablonka, Lukas; Kubart, Tomas; Primetzhofer, Daniel

2017-03-01

The authors have studied the reaction between a Ge (100) substrate and thin layers of Ni ranging from 2 to 10 nm in thickness. The formation of metal-rich Ni5Ge3Ni5Ge3 was found to precede that of the monogermanide NiGe by means of real-time in situ x-ray diffraction during ramp-annealing and ex situ x-ray pole figure analyses for phase identification. The observed sequential growth of Ni5Ge3Ni5Ge3 and NiGe with such thin Ni layers is different from the previously reported simultaneous growth with thicker Ni layers. The phase transformation from Ni5Ge3Ni5Ge3 to NiGe was found to be nucleation-controlled for Ni thicknesses <5 nm<5more » nm, which is well supported by thermodynamic considerations. Specifically, the temperature for the NiGe formation increased with decreasing Ni (rather Ni5Ge3Ni5Ge3) thickness below 5 nm. In combination with sheet resistance measurement and microscopic surface inspection of samples annealed with a standard rapid thermal processing, the temperature range for achieving morphologically stable NiGe layers was identified for this standard annealing process. As expected, it was found to be strongly dependent on the initial Ni thickness« less

Crystallization of Electrodeposited Germanium Thin Film on Silicon (100).

PubMed

Abidin, Mastura Shafinaz Zainal; Matsumura, Ryo; Anisuzzaman, Mohammad; Park, Jong-Hyeok; Muta, Shunpei; Mahmood, Mohamad Rusop; Sadoh, Taizoh; Hashim, Abdul Manaf

2013-11-06

We report the crystallization of electrodeposited germanium (Ge) thin films on n-silicon (Si) (100) by rapid melting process. The electrodeposition was carried out in germanium (IV) chloride: propylene glycol (GeCl₄:C₃H₈O₂) electrolyte with constant current of 50 mA for 30 min. The measured Raman spectra and electron backscattering diffraction (EBSD) images show that the as-deposited Ge thin film was amorphous. The crystallization of deposited Ge was achieved by rapid thermal annealing (RTA) at 980 °C for 1 s. The EBSD images confirm that the orientations of the annealed Ge are similar to that of the Si substrate. The highly intense peak of Raman spectra at 300 cm -1 corresponding to Ge-Ge vibration mode was observed, indicating good crystal quality of Ge. An additional sub peak near to 390 cm -1 corresponding to the Si-Ge vibration mode was also observed, indicating the Ge-Si mixing at Ge/Si interface. Auger electron spectroscopy (AES) reveals that the intermixing depth was around 60 nm. The calculated Si fraction from Raman spectra was found to be in good agreement with the value estimated from Ge-Si equilibrium phase diagram. The proposed technique is expected to be an effective way to crystallize Ge films for various device applications as well as to create strain at the Ge-Si interface for enhancement of mobility.

The large enriched germanium experiment for neutrinoless double beta decay (LEGEND)

NASA Astrophysics Data System (ADS)

Abgrall, N.; Abramov, A.; Abrosimov, N.; Abt, I.; Agostini, M.; Agartioglu, M.; Ajjaq, A.; Alvis, S. I.; Avignone, F. T.; Bai, X.; Balata, M.; Barabanov, I.; Barabash, A. S.; Barton, P. J.; Baudis, L.; Bezrukov, L.; Bode, T.; Bolozdynya, A.; Borowicz, D.; Boston, A.; Boston, H.; Boyd, S. T. P.; Breier, R.; Brudanin, V.; Brugnera, R.; Busch, M.; Buuck, M.; Caldwell, A.; Caldwell, T. S.; Camellato, T.; Carpenter, M.; Cattadori, C.; Cederkäll, J.; Chan, Y.-D.; Chen, S.; Chernogorov, A.; Christofferson, C. D.; Chu, P.-H.; Cooper, R. J.; Cuesta, C.; Demidova, E. V.; Deng, Z.; Deniz, M.; Detwiler, J. A.; Di Marco, N.; Domula, A.; Du, Q.; Efremenko, Yu.; Egorov, V.; Elliott, S. R.; Fields, D.; Fischer, F.; Galindo-Uribarri, A.; Gangapshev, A.; Garfagnini, A.; Gilliss, T.; Giordano, M.; Giovanetti, G. K.; Gold, M.; Golubev, P.; Gooch, C.; Grabmayr, P.; Green, M. P.; Gruszko, J.; Guinn, I. S.; Guiseppe, V. E.; Gurentsov, V.; Gurov, Y.; Gusev, K.; Hakenmüeller, J.; Harkness-Brennan, L.; Harvey, Z. R.; Haufe, C. R.; Hauertmann, L.; Heglund, D.; Hehn, L.; Heinz, A.; Hiller, R.; Hinton, J.; Hodak, R.; Hofmann, W.; Howard, S.; Howe, M. A.; Hult, M.; Inzhechik, L. V.; Csáthy, J. Janicskó; Janssens, R.; Ješkovský, M.; Jochum, J.; Johansson, H. T.; Judson, D.; Junker, M.; Kaizer, J.; Kang, K.; Kazalov, V.; Kermadic, Y.; Kiessling, F.; Kirsch, A.; Kish, A.; Klimenko, A.; Knöpfle, K. T.; Kochetov, O.; Konovalov, S. I.; Kontul, I.; Kornoukhov, V. N.; Kraetzschmar, T.; Kröninger, K.; Kumar, A.; Kuzminov, V. V.; Lang, K.; Laubenstein, M.; Lazzaro, A.; Li, Y. L.; Li, Y.-Y.; Li, H. B.; Lin, S. T.; Lindner, M.; Lippi, I.; Liu, S. K.; Liu, X.; Liu, J.; Loomba, D.; Lubashevskiy, A.; Lubsandorzhiev, B.; Lutter, G.; Ma, H.; Majorovits, B.; Mamedov, F.; Martin, R. D.; Massarczyk, R.; Matthews, J. A. J.; McFadden, N.; Mei, D.-M.; Mei, H.; Meijer, S. J.; Mengoni, D.; Mertens, S.; Miller, W.; Miloradovic, M.; Mingazheva, R.; Misiaszek, M.; Moseev, P.; Myslik, J.; Nemchenok, I.; Nilsson, T.; Nolan, P.; O'Shaughnessy, C.; Othman, G.; Panas, K.; Pandola, L.; Papp, L.; Pelczar, K.; Peterson, D.; Pettus, W.; Poon, A. W. P.; Povinec, P. P.; Pullia, A.; Quintana, X. C.; Radford, D. C.; Rager, J.; Ransom, C.; Recchia, F.; Reine, A. L.; Riboldi, S.; Rielage, K.; Rozov, S.; Rouf, N. W.; Rukhadze, E.; Rumyantseva, N.; Saakyan, R.; Sala, E.; Salamida, F.; Sandukovsky, V.; Savard, G.; Schönert, S.; Schütz, A.-K.; Schulz, O.; Schuster, M.; Schwingenheuer, B.; Selivanenko, O.; Sevda, B.; Shanks, B.; Shevchik, E.; Shirchenko, M.; Simkovic, F.; Singh, L.; Singh, V.; Skorokhvatov, M.; Smolek, K.; Smolnikov, A.; Sonay, A.; Spavorova, M.; Stekl, I.; Stukov, D.; Tedeschi, D.; Thompson, J.; Van Wechel, T.; Varner, R. L.; Vasenko, A. A.; Vasilyev, S.; Veresnikova, A.; Vetter, K.; von Sturm, K.; Vorren, K.; Wagner, M.; Wang, G.-J.; Waters, D.; Wei, W.-Z.; Wester, T.; White, B. R.; Wiesinger, C.; Wilkerson, J. F.; Willers, M.; Wiseman, C.; Wojcik, M.; Wong, H. T.; Wyenberg, J.; Xu, W.; Yakushev, E.; Yang, G.; Yu, C.-H.; Yue, Q.; Yumatov, V.; Zeman, J.; Zeng, Z.; Zhitnikov, I.; Zhu, B.; Zinatulina, D.; Zschocke, A.; Zsigmond, A. J.; Zuber, K.; Zuzel, G.

2017-10-01

The observation of neutrinoless double-beta decay (0νββ) would show that lepton number is violated, reveal that neu-trinos are Majorana particles, and provide information on neutrino mass. A discovery-capable experiment covering the inverted ordering region, with effective Majorana neutrino masses of 15 - 50 meV, will require a tonne-scale experiment with excellent energy resolution and extremely low backgrounds, at the level of ˜0.1 count /(FWHM.t.yr) in the region of the signal. The current generation 76Ge experiments GERDA and the Majorana Demonstrator, utilizing high purity Germanium detectors with an intrinsic energy resolution of 0.12%, have achieved the lowest backgrounds by over an order of magnitude in the 0νββ signal region of all 0νββ experiments. Building on this success, the LEGEND collaboration has been formed to pursue a tonne-scale 76Ge experiment. The collaboration aims to develop a phased 0νββ experimental program with discovery potential at a half-life approaching or at 1028 years, using existing resources as appropriate to expedite physics results.

Progress towards two double-dot qubits in Si/SiGe: quadruple quantum dots

NASA Astrophysics Data System (ADS)

Foote, Ryan H.; Ward, Daniel R.; Kim, Dohun; Thorgrimsson, Brandur; Smith, Luke; Savage, D. E.; Lagally, M. G.; Friesen, Mark; Coppersmith, S. N.; Eriksson, M. A.

We present the fabrication and electrical characterization of two types of gate-defined quadruple quantum dot devices formed in Si/SiGe heterostructures. We compare two designs, one which uses three layers of tightly overlapping gates and is similar to the work found in, and one which uses only two layers of gates and has significantly more open space between neighboring gates. We demonstrate charge-state conditional quantum oscillations in the more open device, we compare the tunability of both devices with each other, and we discuss the implications of these measurements on a path towards larger numbers of coupled quantum dot qubits. This work is supported in part by ARO (W911NF-12-1-0607), NSF (DMR-1206915, PHY-1104660), ONR (N00014-15-1-0029) and the Department of Defense. Development and maintenance of the growth facilities used for fabricating samples supported by DOE (DE-FG02-03ER46028). DK acknowledges support from the Korea Institute of Science and Technology Institutional Program (Project No. 2E26681). This research utilized facilities supported by the NSF (DMR-0832760, DMR-1121288).

Feasibility and availability of ⁶⁸Ga-labelled peptides.

PubMed

Decristoforo, Clemens; Pickett, Roger D; Verbruggen, Alfons

2012-02-01

(68)Ga has attracted tremendous interest as a radionuclide for PET based on its suitable half-life of 68 min, high positron emission yield and ready availability from (68)Ge/(68)Ga generators, making it independent of cyclotron production. (68)Ga-labelled DOTA-conjugated somatostatin analogues, including DOTA-TOC, DOTA-TATE and DOTA-NOC, have driven the development of technologies to provide such radiopharmaceuticals for clinical applications mainly in the diagnosis of somatostatin receptor-expressing tumours. We summarize the issues determining the feasibility and availability of (68)Ga-labelled peptides, including generator technology, (68)Ga generator eluate postprocessing methods, radiolabelling, automation and peptide developments, and also quality assurance and regulatory aspects. (68)Ge/(68)Ga generators based on SnO(2), TiO(2) or organic matrices are today routinely supplied to nuclear medicine departments, and a variety of automated systems for postprocessing and radiolabelling have been developed. New developments include improved chelators for (68)Ga that could open new ways to utilize this technology. Challenges and limitations in the on-site preparation and use of (68)Ga-labelled peptides outside the marketing authorization track are also discussed.

Optimum Water Chemistry in radiation field buildup control

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Chien, C.

1995-03-01

Nuclear utilities continue to face the challenGE of reducing exposure of plant maintenance personnel. GE Nuclear Energy has developed the concept of Optimum Water Chemistry (OWC) to reduce the radiation field buildup and minimize the radioactive waste production. It is believed that reduction of radioactive sources and improvement of the water chemistry quality should significantly reduce both the radiation exposure and radwaste production. The most important source of radioactivity is cobalt and replacement of cobalt containing alloy in the core region as well as in the entire primary system is considered the first priority to achieve the goal of lowmore » exposure and minimized waste production. A plant specific computerized cobalt transport model has been developed to evaluate various options in a BWR system under specific conditions. Reduction of iron input and maintaining low ionic impurities in the coolant have been identified as two major tasks for operators. Addition of depleted zinc is a proven technique to reduce Co-60 in reactor water and on out-of-core piping surfaces. The effect of HWC on Co-60 transport in the primary system will also be discussed.« less

High peak-power mid-infrared ZnGeP₂ optical parametric oscillator pumped by a Tm:fiber master oscillator power amplifier system.

PubMed

Gebhardt, Martin; Gaida, Christian; Kadwani, Pankaj; Sincore, Alex; Gehlich, Nils; Jeon, Cheonha; Shah, Lawrence; Richardson, Martin

2014-03-01

We report on the utilization of a novel Tm:fiber laser source for mid-IR ZnGeP2 (ZGP) optical parametric oscillator (OPO) pumping. The pump laser is built in a master oscillator power-amplifier configuration delivering up to 3.36 W of polarized, diffraction limited output power with 7 ns pulse duration and 4 kHz repetition rate. This corresponds to a peak power of ∼121  kW and a pulse energy of ∼0.84  mJ. With this source, we generated 27.9 kW of total mid-IR peak power in a doubly resonant oscillator (DRO) configuration. This is, to the best of our knowledge, the highest ever demonstrated mid-IR peak power from a directly Tm:fiber laser pumped ZGP OPO. Moreover, a DRO output with about 284 μJ of total mid-IR pulse energy was demonstrated using 100 ns pump pulses. The wavelength tuning of the idler was extended to 6 μm with lower output power in another OPO experiment.

A sensitive Faraday rotation setup using triple modulation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Phelps, G.; Abney, J.; Broering, M.

2015-07-15

The utilization of polarized targets in scattering experiments has become a common practice in many major accelerator laboratories. Noble gases are especially suitable for such applications, since they can be easily hyper-polarized using spin exchange or metastable pumping techniques. Polarized helium-3 is a very popular target because it often serves as an effective polarized neutron due to its simple nuclear structure. A favorite cell material to generate and store polarized helium-3 is GE-180, a relatively dense aluminosilicate glass. In this paper, we present a Faraday rotation method, using a new triple modulation technique, where the measurement of the Verdet constantsmore » of SF57 flint glass, pyrex glass, and air was tested. The sensitivity obtained shows that this technique may be implemented in future cell wall characterization and thickness measurements. We also discuss the first ever extraction of the Verdet constant of GE-180 glass for four wavelength values of 632 nm, 773 nm, 1500 nm, and 1547 nm, whereupon the expected 1/λ{sup 2} dependence was observed.« less

Fragility of chalcogenide glass in relation to characteristic temperature T0/Tg

NASA Astrophysics Data System (ADS)

Shaker, A. M.; Shanker Rao, T.; Lilly Shanker Rao, T.; Venkataraman, K.

2018-03-01

The present study reports the mutual relationship between the fragility index m and the characteristic temperature T0/Tg. The fragility of the chalcogenide amorphous glass of Ge10Se50Te40 is calculated by utilizing glass transition temperature (Tg) measured by DSC (Differential Scanning Calorimetry) at different heating rates (β) in the range 5 to 20 K/min. Vogel-Fulcher-Tammann (VFT) equation is fitted to the data of Tg. In addition to the VFT method, three other methods are also used to evaluate m. The fragility index m of the Ge10Se50Te40 system showed the trend of decrease with increasing heating rate but remained stable around 22 for the heating rate 10 K/min. The value of m for the glass is near the lower limit (m ≈ 16) this indicates the alloy is a strong glass forming material in accordance of Angell’s interpretation of fragility. The calculated values of characteristic temperature T0/Tg is very close to 1 which also indicates that clearly the system is most fragile.

GELATIO: a general framework for modular digital analysis of high-purity Ge detector signals

NASA Astrophysics Data System (ADS)

Agostini, M.; Pandola, L.; Zavarise, P.; Volynets, O.

2011-08-01

GELATIO is a new software framework for advanced data analysis and digital signal processing developed for the GERDA neutrinoless double beta decay experiment. The framework is tailored to handle the full analysis flow of signals recorded by high purity Ge detectors and photo-multipliers from the veto counters. It is designed to support a multi-channel modular and flexible analysis, widely customizable by the user either via human-readable initialization files or via a graphical interface. The framework organizes the data into a multi-level structure, from the raw data up to the condensed analysis parameters, and includes tools and utilities to handle the data stream between the different levels. GELATIO is implemented in C++. It relies upon ROOT and its extension TAM, which provides compatibility with PROOF, enabling the software to run in parallel on clusters of computers or many-core machines. It was tested on different platforms and benchmarked in several GERDA-related applications. A stable version is presently available for the GERDA Collaboration and it is used to provide the reference analysis of the experiment data.

Development and Validation of a Multiplexed Protein Quantitation Assay for the Determination of Three Recombinant Proteins in Soybean Tissues by Liquid Chromatography with Tandem Mass Spectrometry.

PubMed

Hill, Ryan C; Oman, Trent J; Shan, Guomin; Schafer, Barry; Eble, Julie; Chen, Cynthia

2015-08-26

Currently, traditional immunochemistry technologies such as enzyme-linked immunosorbent assays (ELISA) are the predominant analytical tool used to measure levels of recombinant proteins expressed in genetically engineered (GE) plants. Recent advances in agricultural biotechnology have created a need to develop methods capable of selectively detecting and quantifying multiple proteins in complex matrices because of increasing numbers of transgenic proteins being coexpressed or "stacked" to achieve tolerance to multiple herbicides or to provide multiple modes of action for insect control. A multiplexing analytical method utilizing liquid chromatography with tandem mass spectrometry (LC-MS/MS) has been developed and validated to quantify three herbicide-tolerant proteins in soybean tissues: aryloxyalkanoate dioxygenase (AAD-12), 5-enol-pyruvylshikimate-3-phosphate synthase (2mEPSPS), and phosphinothricin acetyltransferase (PAT). Results from the validation showed high recovery and precision over multiple analysts and laboratories. Results from this method were comparable to those obtained with ELISA with respect to protein quantitation, and the described method was demonstrated to be suitable for multiplex quantitation of transgenic proteins in GE crops.

A simple algorithm to compute the peak power output of GaAs/Ge solar cells on the Martian surface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Glueck, P.R.; Bahrami, K.A.

1995-12-31

The Jet Propulsion Laboratory`s (JPL`s) Mars Pathfinder Project will deploy a robotic ``microrover`` on the surface of Mars in the summer of 1997. This vehicle will derive primary power from a GaAs/Ge solar array during the day and will ``sleep`` at night. This strategy requires that the rover be able to (1) determine when it is necessary to save the contents of volatile memory late in the afternoon and (2) determine when sufficient power is available to resume operations in the morning. An algorithm was developed that estimates the peak power point of the solar array from the solar arraymore » short-circuit current and temperature telemetry, and provides functional redundancy for both measurements using the open-circuit voltage telemetry. The algorithm minimizes vehicle processing and memory utilization by using linear equations instead of look-up tables to estimate peak power with very little loss in accuracy. This paper describes the method used to obtain the algorithm and presents the detailed algorithm design.« less

Change in the plasmid copy number in acetic acid bacteria in response to growth phase and acetic acid concentration.

PubMed

Akasaka, Naoki; Astuti, Wiwik; Ishii, Yuri; Hidese, Ryota; Sakoda, Hisao; Fujiwara, Shinsuke

2015-06-01

Plasmids pGE1 (2.5 kb), pGE2 (7.2 kb), and pGE3 (5.5 kb) were isolated from Gluconacetobacter europaeus KGMA0119, and sequence analyses revealed they harbored 3, 8, and 4 genes, respectively. Plasmid copy numbers (PCNs) were determined by real-time quantitative PCR at different stages of bacterial growth. When KGMA0119 was cultured in medium containing 0.4% ethanol and 0.5% acetic acid, PCN of pGE1 increased from 7 copies/genome in the logarithmic phase to a maximum of 12 copies/genome at the beginning of the stationary phase, before decreasing to 4 copies/genome in the late stationary phase. PCNs for pGE2 and pGE3 were maintained at 1-3 copies/genome during all phases of growth. Under a higher concentration of ethanol (3.2%) the PCN for pGE1 was slightly lower in all the growth stages, and those of pGE2 and pGE3 were unchanged. In the presence of 1.0% acetic acid, PCNs were higher for pGE1 (10 copies/genome) and pGE3 (6 copies/genome) during the logarithmic phase. Numbers for pGE2 did not change, indicating that pGE1 and pGE3 increase their PCNs in response to acetic acid. Plasmids pBE2 and pBE3 were constructed by ligating linearized pGE2 and pGE3 into pBR322. Both plasmids were replicable in Escherichia coli, Acetobacter pasteurianus and G. europaeus, highlighting their suitability as vectors for acetic acid bacteria. Copyright © 2014 The Society for Biotechnology, Japan. Published by Elsevier B.V. All rights reserved.

Energy dependence of π, p and p¯ transverse momentum spectra for Au+Au collisions at s=62.4 and 200 GeV

NASA Astrophysics Data System (ADS)

STAR Collaboration; Abelev, B. I.; Aggarwal, M. M.; Ahammed, Z.; Anderson, B. D.; Arkhipkin, D.; Averichev, G. S.; Bai, Y.; Balewski, J.; Barannikova, O.; Barnby, L. S.; Baumgart, S.; Belaga, V. V.; Bellingeri-Laurikainen, A.; Bellwied, R.; Benedosso, F.; Betts, R. R.; Bharadwaj, S.; Bhasin, A.; Bhati, A. K.; Bichsel, H.; Bielcik, J.; Bielcikova, J.; Billmeier, A.; Bland, L. C.; Blyth, S.-L.; Bombara, M.; Bonner, B. E.; Botje, M.; Bouchet, J.; Brandin, A. V.; Bravar, A.; Burton, T. P.; Bystersky, M.; Cadman, R. V.; Cai, X. Z.; Caines, H.; Calderón de La Barca Sánchez, M.; Callner, J.; Catu, O.; Cebra, D.; Chajecki, Z.; Chaloupka, P.; Chattopadhyay, S.; Chen, H. F.; Chen, J. H.; Chen, J. Y.; Cheng, J.; Cherney, M.; Chikanian, A.; Choi, H. A.; Christie, W.; Chung, S. U.; Coffin, J. P.; Cormier, T. M.; Cosentino, M. R.; Cramer, J. G.; Crawford, H. J.; Das, D.; Dash, S.; Daugherity, M.; de Moura, M. M.; Dedovich, T. G.; Dephillips, M.; Derevschikov, A. A.; Didenko, L.; Dietel, T.; Djawotho, P.; Dogra, S. M.; Dong, X.; Drachenberg, J. L.; Draper, J. E.; Du, F.; Dunin, V. B.; Dunlop, J. C.; Dutta Mazumdar, M. R.; Eckardt, V.; Edwards, W. R.; Efimov, L. G.; Emelianov, V.; Engelage, J.; Eppley, G.; Erazmus, B.; Estienne, M.; Fachini, P.; Fatemi, R.; Fedorisin, J.; Feng, A.; Filip, P.; Finch, E.; Fine, V.; Fisyak, Y.; Fornazier, K. S. F.; Fu, J.; Gagliardi, C. A.; Gaillard, L.; Ganti, M. S.; Garcia-Solis, E.; Ghazikhanian, V.; Ghosh, P.; Gorbunov, Y. G.; Gos, H.; Grebenyuk, O.; Grosnick, D.; Guertin, S. M.; Guimaraes, K. S. F. F.; Gupta, N.; Haag, B.; Hallman, T. J.; Hamed, A.; Harris, J. W.; He, W.; Heinz, M.; Henry, T. W.; Hepplemann, S.; Hippolyte, B.; Hirsch, A.; Hjort, E.; Hoffman, A. M.; Hoffmann, G. W.; Hofman, D.; Hollis, R.; Horner, M. J.; Huang, H. Z.; Hughes, E. W.; Humanic, T. J.; Igo, G.; Iordanova, A.; Jacobs, P.; Jacobs, W. W.; Jakl, P.; Jia, F.; Jiang, H.; Jones, P. G.; Judd, E. G.; Kabana, S.; Kang, K.; Kapitan, J.; Kaplan, M.; Keane, D.; Kechechyan, A.; Kettler, D.; Khodyrev, V. Yu.; Kim, B. C.; Kiryluk, J.; Kisiel, A.; Kislov, E. M.; Klein, S. R.; Knospe, A. G.; Kocoloski, A.; Koetke, D. D.; Kollegger, T.; Kopytine, M.; Kotchenda, L.; Kouchpil, V.; Kowalik, K. L.; Kramer, M.; Kravtsov, P.; Kravtsov, V. I.; Krueger, K.; Kuhn, C.; Kulikov, A. I.; Kumar, A.; Kurnadi, P.; Kuznetsov, A. A.; Lamont, M. A. C.; Landgraf, J. M.; Lange, S.; Lapointe, S.; Laue, F.; Lauret, J.; Lebedev, A.; Lednicky, R.; Lee, C.-H.; Lehocka, S.; Levine, M. J.; Li, C.; Li, Q.; Li, Y.; Lin, G.; Lin, X.; Lindenbaum, S. J.; Lisa, M. A.; Liu, F.; Liu, H.; Liu, J.; Liu, L.; Ljubicic, T.; Llope, W. J.; Long, H.; Longacre, R. S.; Lopez-Noriega, M.; Love, W. A.; Lu, Y.; Ludlam, T.; Lynn, D.; Ma, G. L.; Ma, J. G.; Ma, Y. G.; Mahapatra, D. P.; Majka, R.; Mangotra, L. K.; Manweiler, R.; Margetis, S.; Markert, C.; Martin, L.; Matis, H. S.; Matulenko, Yu. A.; McClain, C. J.; McShane, T. S.; Melnick, Yu.; Meschanin, A.; Millane, J.; Miller, M. L.; Minaev, N. G.; Mioduszewski, S.; Mironov, C.; Mischke, A.; Mitchell, J.; Mohanty, B.; Molnar, L.; Morozov, D. A.; Munhoz, M. G.; Nandi, B. K.; Nattrass, C.; Nayak, T. K.; Nelson, J. M.; Nepali, C.; Netrakanti, P. K.; Nikitin, V. A.; Nogach, L. V.; Nurushev, S. B.; Odyniec, G.; Ogawa, A.; Okorokov, V.; Oldenburg, M.; Olson, D.; Pachr, M.; Pal, S. K.; Panebratsev, Y.; Panitkin, S. Y.; Pavlinov, A. I.; Pawlak, T.; Peitzmann, T.; Perevoztchikov, V.; Perkins, C.; Peryt, W.; Phatak, S. C.; Planinic, M.; Pluta, J.; Poljak, N.; Porile, N.; Poskanzer, A. M.; Potekhin, M.; Potrebenikova, E.; Potukuchi, B. V. K. S.; Prindle, D.; Pruneau, C.; Putschke, J.; Qattan, I. A.; Raniwala, R.; Raniwala, S.; Ray, R. L.; Razin, S. V.; Reinnarth, J.; Relyea, D.; Ridiger, A.; Ritter, H. G.; Roberts, J. B.; Rogachevskiy, O. V.; Romero, J. L.; Rose, A.; Roy, C.; Ruan, L.; Russcher, M. J.; Sahoo, R.; Sakrejda, I.; Sakuma, T.; Salur, S.; Sandweiss, J.; Sarsour, M.; Savin, I.; Sazhin, P. S.; Schambach, J.; Scharenberg, R. P.; Schmitz, N.; Seger, J.; Selyuzhenkov, I.; Seyboth, P.; Shabetai, A.; Shahaliev, E.; Shao, M.; Sharma, M.; Shen, W. Q.; Shimanskiy, S. S.; Sichtermann, E.; Simon, F.; Singaraju, R. N.; Smirnov, N.; Snellings, R.; Sorensen, P.; Sowinski, J.; Speltz, J.; Spinka, H. M.; Srivastava, B.; Stadnik, A.; Stanislaus, T. D. S.; Stock, R.; Strikhanov, M.; Stringfellow, B.; Suaide, A. A. P.; Suarez, M. C.; Subba, N. L.; Sumbera, M.; Sun, X. M.; Sun, Z.; Surrow, B.; Symons, T. J. M.; Szanto de Toledo, A.; Takahashi, J.; Tang, A. H.; Tarnowsky, T.; Thomas, J. H.; Timmins, A. R.; Timoshenko, S.; Tokarev, M.; Trainor, T. A.; Trentalange, S.; Tribble, R. E.; Tsai, O. D.; Ulery, J.; Ullrich, T.; Underwood, D. G.; van Buren, G.; van der Kolk, N.; van Leeuwen, M.; Vander Molen, A. M.; Varma, R.; Vasilevski, I. M.; Vasiliev, A. N.; Vernet, R.; Vigdor, S. E.; Viyogi, Y. P.; Vokal, S.; Voloshin, S. A.; Waggoner, W. T.; Wang, F.; Wang, G.; Wang, J. S.; Wang, X. L.; Wang, Y.; Watson, J. W.; Webb, J. C.; Westfall, G. D.; Wetzler, A.; Whitten, C., Jr.; Wieman, H.; Wissink, S. W.; Witt, R.; Wu, J.; Wu, J.; Xu, N.; Xu, Q. H.; Xu, Z.; Yepes, P.; Yoo, I.-K.; Yue, Q.; Yurevich, V. I.; Zhan, W.; Zhang, H.; Zhang, W. M.; Zhang, Y.; Zhang, Z. P.; Zhao, Y.; Zhong, C.; Zoulkarneev, R.; Zoulkarneeva, Y.; Zubarev, A. N.; Zuo, J. X.

2007-11-01

We study the energy dependence of the transverse momentum (p) spectra for charged pions, protons and anti-protons for Au+Au collisions at s=62.4 and 200 GeV. Data are presented at mid-rapidity (|y|<0.5) for 0.27GeV/c) the modification is similar for both energies. The p/π and p¯/π ratios for central collisions at s=62.4GeV peak at p≃2GeV/c. In the p range where recombination is expected to dominate, the p/π ratios at 62.4 GeV are larger than at 200 GeV, while the p¯/π ratios are smaller. For p>2GeV/c, the p¯/π ratios at the two beam energies are independent of p and centrality indicating that the dependence of the p¯/π ratio on p does not change between 62.4 and 200 GeV. These findings challenge various models incorporating jet quenching and/or constituent quark coalescence.

Oxygen Tuned Local Structure and Phase-Change Performance of Germanium Telluride.

PubMed

Zhou, Xilin; Du, Yonghua; Behera, Jitendra K; Wu, Liangcai; Song, Zhitang; Simpson, Robert E

2016-08-10

The effect of oxygen on the local structure of Ge atoms in GeTe-O materials has been investigated. Oxygen leads to a significant modification to the vibrational modes of Ge octahedra, which results from a decrease in its coordination. We find that a defective octahedral Ge network is the crucial fingerprint for rapid and reversible structural transitions in GeTe-based phase change materials. The appearance of oxide Raman modes confirms phase separation into GeO and TeO at high level O doping. Counterintuitively, despite the increase in crystallization temperature of oxygen doped GeTe-O phase change materials, when GeTe-O materials are used in electrical phase change memory cells, the electrical switching energy is lower than the pure GeTe material. This switching energy reduction is ascribed to the smaller change in volume, and therefore smaller enthalpy change, for the oxygen doped GeTe materials.

Mechanism of growth of the Ge wetting layer upon exposure of Si(100)-2 x 1 to GeH4.

PubMed

Liu, Chie-Sheng; Chou, Li-Wei; Hong, Lu-Sheng; Jiang, Jyh-Chiang

2008-04-23

This paper describes the initial reaction kinetics of Ge deposition after exposure of Si(100)-2 x 1 to GeH4 in a UHV-CVD system. The rate of Ge growth, especially at the wetting layer stage, was investigated using in situ X-ray photoelectron spectroscopy to measure the Ge signal at the onset of deposition. A kinetic analysis of the initial growth of the Ge wetting layer at temperatures ranging from 698 to 823 K revealed an activation energy of 30.7 kcal/mol. Density functional theory calculations suggested that opening of the Si dimer--with a closely matching energy barrier of 29.7 kcal/mol, following hydrogen atom migration--was the rate controlling step for the incorporation of a GeH2 unit into the lattice to complete the growth of the Ge wetting layer after dissociative adsorption of GeH4.

Status of the MiniCLEAN dark matter experiment

NASA Astrophysics Data System (ADS)

Rielage, Keith

2009-10-01

MiniCLEAN utilizes over 400 kg of liquid cryogen to detect nuclear recoils from WIMP dark matter with a projected sensitivity of 2x10-45 cm^2 for a mass of 100 GeV. The liquid cryogen is interchangeable between argon and neon to study the A^2 dependence of the potential signal and examine backgrounds. MiniCLEAN utilizes a unique modular design with spherical geometry to maximize the light yield using cold photomultiplier tubes in a single-phase detector. Pulse shape discrimination techniques are used to separate nuclear recoil signals from electron recoil backgrounds. Particular attention is being paid to mitigating the backgrounds from contamination of surfaces by radon daughters during assembly. The design and assembly status of the experiment will be discussed. The projected timeline and future plans for staging the experiment at SNOLAB in Sudbury, Canada will be presented.

MO-FG-207-03: Maximizing the Utility of Integrated PET/MRI in Clinical Applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Behr, S.

2015-06-15

The use of integrated PET/MRI systems in clinical applications can best benefit from understanding their technological advances and limitations. The currently available clinical PET/MRI systems have their own characteristics. Thorough analyses of existing technical data and evaluation of necessary performance metrics for quality assurances could be conducted to optimize application-specific PET/MRI protocols. This Symposium will focus on technical advances and limitations of clinical PET/MRI systems, and how this exciting imaging modality can be utilized in applications that can benefit from both PET and MRI. Learning Objectives: To understand the technological advances of clinical PET/MRI systems To correctly identify clinical applicationsmore » that can benefit from PET/MRI To understand ongoing work to further improve the current PET/MRI technology Floris Jansen is a GE Healthcare employee.« less

The Global Climate and Energy Project at Stanford University: Fundamental Research Towards Future Energy Technologies

NASA Astrophysics Data System (ADS)

Milne, Jennifer L.; Sassoon, Richard E.; Hung, Emilie; Bosshard, Paolo; Benson, Sally M.

The Global Climate and Energy Project (GCEP), at Stanford University, invests in research with the potential to lead to energy technologies with lower greenhouse gas emissions than current energy technologies. GCEP is sponsored by four international companies, ExxonMobil, GE, Schlumberger, and Toyota and supports research programs in academic institutions worldwide. Research falls into the broad areas of carbon based energy systems, renewables, electrochemistry, and the electric grid. Within these areas research efforts are underway that are aimed at achieving break-throughs and innovations that greatly improve efficiency, performance, functionality and cost of many potential energy technologies of the future including solar, batteries, fuel cells, biofuels, hydrogen storage and carbon capture and storage. This paper presents a summary of some of GCEP's activities over the past 7 years with current research areas of interest and potential research directions in the near future.