Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study.

PubMed

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-04-20

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C.

Microwave Synthesized ZnO Nanorod Arrays for UV Sensors: A Seed Layer Annealing Temperature Study

PubMed Central

Pimentel, Ana; Ferreira, Sofia Henriques; Nunes, Daniela; Calmeiro, Tomas; Martins, Rodrigo; Fortunato, Elvira

2016-01-01

The present work reports the influence of zinc oxide (ZnO) seed layer annealing temperature on structural, optical and electrical properties of ZnO nanorod arrays, synthesized by hydrothermal method assisted by microwave radiation, to be used as UV sensors. The ZnO seed layer was produced using the spin-coating method and several annealing temperatures, ranging from 100 to 500 °C, have been tested. X-ray diffraction (XRD), scanning electron microscopy (SEM), atomic force microscopy (AFM) and spectrophotometry measurements have been used to investigate the structure, morphology, and optical properties variations of the produced ZnO nanorod arrays regarding the seed layer annealing temperatures employed. After the growth of ZnO nanorod arrays, the whole structure was tested as UV sensors, showing an increase in the sensitivity with the increase of seed layer annealing temperature. The UV sensor response of ZnO nanorod arrays produced with the seed layer annealed temperature of 500 °C was 50 times superior to the ones produced with a seed layer annealed at 100 °C. PMID:28773423

Reduced water vapor transmission rates of low-temperature solution-processed metal oxide barrier films via ultraviolet annealing

NASA Astrophysics Data System (ADS)

Park, Seonuk; Jeong, Yong Jin; Baek, Yonghwa; Kim, Lae Ho; Jang, Jin Hyuk; Kim, Yebyeol; An, Tae Kyu; Nam, Sooji; Kim, Se Hyun; Jang, Jaeyoung; Park, Chan Eon

2017-08-01

Here, we report the fabrication of low-temperature sol-gel-derived aluminum oxide (AlOx) films via ultraviolet (UV) annealing and the investigation of their water vapor blocking properties by measuring the water vapor transmission rates (WVTRs). The UV annealing process induced the formation of a dense metal-oxygen-metal bond (Al-O-Al structure) at low temperatures (<200 °C) that are compatible with commercial plastic substrates. The density of the UV-annealed AlOx thin film at 180 °C was comparable to that of AlOx thin films that have been thermally annealed at 350 °C. Furthermore, the UV-annealed AlOx thin films exhibited a high optical transparency in the visible region (>99%) and good electrical insulating properties (∼10-7 A/cm2 at 2 MV/cm). Finally, we confirmed that a dense AlOx thin film was successfully deposited onto the plastic substrate via UV annealing at low temperatures, leading to a substantial reduction in the WVTRs. The Ca corrosion test was used to measure the WVTRs of AlOx thin films deposited onto polyethylene naphthalate or polyimide substrates, determined to be 0.0095 g m-2 day-1 (25 °C, 50% relative humidity) and 0.26 g m-2 day-1, respectively.

Reliability, Durability and Packaging of Fibre Bragg Gratings for Large-Scale Structural Health Monitoring of Defence Platforms

DTIC Science & Technology

2013-08-01

thermoset system designed to achieve good wetting , high-strength and low-creep adhesion. Many commercially-available adhesives were sourced and...Bragg grating: 1. Removal of the fibre coating. 2. Photosensitization of the fibre. 3. Exposure of the grating to UV laser light. 4. Annealing and...molecular hydrogen loading (H2 loading) in a heated pressure vessel . Photosensitisation results in a stronger refractive index contrast for a given

Local Resistance Profiling of Ultra-Shallow Junction with Spike Lamp and Laser Annealing Using Scanning Spreading Resistance Microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abo, Satoshi; Tanaka, Yuji; Nishikawa, Kazuhisa

2008-11-03

Local resistance profiles of ultra-shallow arsenic implanted into silicon with an energy of 3.5 keV and a dose of 1.2x10{sup 15} ions/cm{sup 2} activated by conventional spike lamp and laser annealing were measured by SSRM in a nitrogen atmosphere with a depth resolution of less than 10 nm for investigating the combination of the conventional spike lamp and laser annealing. Spike lamp annealing at 1050 deg. C followed by laser annealing at a power density of 0.42 kW/mm{sup 2} was found to give the lowest sheet resistance. The resistance profiles obtained by SSRM also indicated the lowest resistance for themore » sample after spike lamp annealing at 1050 deg. C followed by laser annealing with a power density of 0.42 kW/mm{sup 2}. Laser annealing alone with a power density of 0.42 kW/mm{sup 2} resulted in the higher sheet resistance, though the shallower resistance profile could be obtained. Spike lamp annealing followed by laser annealing procedures are effective in activating shallow arsenic profiles.« less

Effect of annealing on the laser induced damage of polished and CO2 laser-processed fused silica surfaces

NASA Astrophysics Data System (ADS)

Doualle, T.; Gallais, L.; Cormont, P.; Donval, T.; Lamaignère, L.; Rullier, J. L.

2016-06-01

We investigate the effect of different heat treatments on the laser-induced damage probabilities of fused silica samples. Isothermal annealing in a furnace is applied, with different temperatures in the range 700-1100 °C and 12 h annealing time, to super-polished fused silica samples. The surface flatness and laser damage probabilities at 3 ns, 351 nm are measured before and after the different annealing procedures. We have found a significant improvement of the initial laser damage probabilities of the silica surface after annealing at 1050 °C for 12 h. A similar study has been conducted on CO2 laser-processed sites on the surface of the samples. Before and after annealing, we have studied the morphology of the sites, the evolution of residual stress, and the laser-induced damage threshold measured at 351 nm, 3 ns. In this case, we observe that the laser damage resistance of the laser created craters can reach the damage level of the bare fused silica surface after the annealing process, with a complete stress relieve. The obtained results are then compared to the case of local annealing process by CO2 laser irradiation during 1 s, and we found similar improvements in both cases. The different results obtained in the study are compared to numerical simulations made with a thermo-mechanical model based on finite-element method that allows the simulation of the isothermal or the local annealing process, the evolution of stress and fictive temperature. The simulation results were found to be very consistent with experimental observations for the stresses evolution after annealing and estimation of the heat affected area during laser-processing based on the density dependence with fictive temperature. Following this work, the temperature for local annealing should reach 1330-1470 °C for an optimized reduction of damage probability and be below the threshold for material removal, whereas furnace annealing should be kept below the annealing point to avoid sample deformation.

Pattern Laser Annealing by a Pulsed Laser

NASA Astrophysics Data System (ADS)

Komiya, Yoshio; Hoh, Koichiro; Murakami, Koichi; Takahashi, Tetsuo; Tarui, Yasuo

1981-10-01

Preliminary experiments with contact-type pattern laser annealing were made for local polycrystallization of a-Si, local evaporation of a-Si and local formation of Ni-Si alloy. These experiments showed that the mask patterns can be replicated as annealed regions with a resolution of a few microns on substrates. To overcome shortcomings due to the contact type pattern annealing, a projection type reduction pattern laser annealing system is proposed for resistless low temperature pattern forming processes.

Optical properties modification induced by laser radiation in noble-metal-doped glasses

NASA Astrophysics Data System (ADS)

Nedyalkov, N.; Stankova, N. E.; Koleva, M. E.; Nikov, R.; Atanasov, P.; Grozeva, M.; Iordanova, E.; Yankov, G.; Aleksandrov, L.; Iordanova, R.; Karashanova, D.

2018-03-01

We present results on laser-induced color changes in gold- and silver-doped glass. The doped borosilicate glass was prepared by conventional melt quenching. The study was focused on the change of the optical properties after irradiation of the glass by femtosecond laser pulses. Under certain conditions, the laser radiation induces defects associated with formation of color centers in the material. We studied this process in a broad range of laser radiation wavelengths – from UV to IR, and observed changes in the color of the irradiated areas after annealing of the processed glass samples, the color being red for the gold-doped glass red and yellow for the silver-doped glass. The structural and morphological analyses performed indicated that this effect is related to formation of metal nanoparticles inside the material. The results obtained show that femtosecond laser processing of noble-metal-doped glasses can be used for fabrication of 3D-nanoparticles systems in transparent materials with application as novel optical components.

Crystallization to polycrystalline silicon thin film and simultaneous inactivation of electrical defects by underwater laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Machida, Emi; Research Fellowships of the Japan Society for the Promotion of Science, Japan Society for the Promotion of Science, 1-8 Chiyoda, Tokyo 102-8472; Horita, Masahiro

2012-12-17

We propose a low-temperature laser annealing method of a underwater laser annealing (WLA) for polycrystalline silicon (poly-Si) films. We performed crystallization to poly-Si films by laser irradiation in flowing deionized-water where KrF excimer laser was used for annealing. We demonstrated that the maximum value of maximum grain size of WLA samples was 1.5 {mu}m, and that of the average grain size was 2.8 times larger than that of conventional laser annealing in air (LA) samples. Moreover, WLA forms poly-Si films which show lower conductivity and larger carrier life time attributed to fewer electrical defects as compared to LA poly-Si films.

Laser-processing of VO2 thin films synthesized by polymer-assisted-deposition

NASA Astrophysics Data System (ADS)

Breckenfeld, Eric; Kim, Heungsoo; Gorzkowski, Edward P.; Sutto, Thomas E.; Piqué, Alberto

2017-03-01

We investigate a novel route for synthesis and laser-sintering of VO2 thin films via solution-based polymer-assisted-deposition (PAD). By replacing the traditional solvent for PAD (water) with propylene glycol, we are able to control the viscosity and improve the environmental stability of the precursor. The solution stability and ability to control the viscosity makes for an ideal solution to pattern simple or complex shapes via direct-write methods. We demonstrate the potential of our precursor for printing applications by combining PAD with laser induced forward transfer (LIFT). We also demonstrate large-area film synthesis on 4 in. diameter glass wafers. By varying the annealing temperature, we identify the optimal synthesis conditions, obtaining optical transmittance changes of 60% at a 2500 nm wavelength and a two-order-of-magnitude semiconductor-to-metal transition. We go on to demonstrate two routes for improved semiconductor-to-metal characteristics. The first method uses a multi-coating process to produce denser films with large particles. The second method uses a pulsed-UV-laser sintering step in films annealed at low temperatures (<450° C) to promote particle growth and improve the semiconductor-to-metal transition. By comparing the hysteresis width and semiconductor-to-metal transition magnitude in these samples, we demonstrate that both methods yield high quality VO2 with a three-order-of-magnitude transition.

Simultaneous high crystallinity and sub-bandgap optical absorptance in hyperdoped black silicon using nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Franta, Benjamin, E-mail: bafranta@gmail.com; Pastor, David; Gandhi, Hemi H.

2015-12-14

Hyperdoped black silicon fabricated with femtosecond laser irradiation has attracted interest for applications in infrared photodetectors and intermediate band photovoltaics due to its sub-bandgap optical absorptance and light-trapping surface. However, hyperdoped black silicon typically has an amorphous and polyphasic polycrystalline surface that can interfere with carrier transport, electrical rectification, and intermediate band formation. Past studies have used thermal annealing to obtain high crystallinity in hyperdoped black silicon, but thermal annealing causes a deactivation of the sub-bandgap optical absorptance. In this study, nanosecond laser annealing is used to obtain high crystallinity and remove pressure-induced phases in hyperdoped black silicon while maintainingmore » high sub-bandgap optical absorptance and a light-trapping surface morphology. Furthermore, it is shown that nanosecond laser annealing reactivates the sub-bandgap optical absorptance of hyperdoped black silicon after deactivation by thermal annealing. Thermal annealing and nanosecond laser annealing can be combined in sequence to fabricate hyperdoped black silicon that simultaneously shows high crystallinity, high above-bandgap and sub-bandgap absorptance, and a rectifying electrical homojunction. Such nanosecond laser annealing could potentially be applied to non-equilibrium material systems beyond hyperdoped black silicon.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Doualle, T.; Gallais, L., E-mail: laurent.gallais@fresnel.fr; Cormont, P.

We investigate the effect of different heat treatments on the laser-induced damage probabilities of fused silica samples. Isothermal annealing in a furnace is applied, with different temperatures in the range 700–1100 °C and 12 h annealing time, to super-polished fused silica samples. The surface flatness and laser damage probabilities at 3 ns, 351 nm are measured before and after the different annealing procedures. We have found a significant improvement of the initial laser damage probabilities of the silica surface after annealing at 1050 °C for 12 h. A similar study has been conducted on CO{sub 2} laser-processed sites on the surface of the samples. Before andmore » after annealing, we have studied the morphology of the sites, the evolution of residual stress, and the laser-induced damage threshold measured at 351 nm, 3 ns. In this case, we observe that the laser damage resistance of the laser created craters can reach the damage level of the bare fused silica surface after the annealing process, with a complete stress relieve. The obtained results are then compared to the case of local annealing process by CO{sub 2} laser irradiation during 1 s, and we found similar improvements in both cases. The different results obtained in the study are compared to numerical simulations made with a thermo-mechanical model based on finite-element method that allows the simulation of the isothermal or the local annealing process, the evolution of stress and fictive temperature. The simulation results were found to be very consistent with experimental observations for the stresses evolution after annealing and estimation of the heat affected area during laser-processing based on the density dependence with fictive temperature. Following this work, the temperature for local annealing should reach 1330–1470 °C for an optimized reduction of damage probability and be below the threshold for material removal, whereas furnace annealing should be kept below the annealing point to avoid sample deformation.« less

Precision Laser Annealing of Focal Plane Arrays

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bender, Daniel A.; DeRose, Christopher; Starbuck, Andrew Lea

2015-09-01

We present results from laser annealing experiments in Si using a passively Q-switched Nd:YAG microlaser. Exposure with laser at fluence values above the damage threshold of commercially available photodiodes results in electrical damage (as measured by an increase in photodiode dark current). We show that increasing the laser fluence to values in excess of the damage threshold can result in annealing of a damage site and a reduction in detector dark current by as much as 100x in some cases. A still further increase in fluence results in irreparable damage. Thus we demonstrate the presence of a laser annealing windowmore » over which performance of damaged detectors can be at least partially reconstituted. Moreover dark current reduction is observed over the entire operating range of the diode indicating that device performance has been improved for all values of reverse bias voltage. Additionally, we will present results of laser annealing in Si waveguides. By exposing a small (<10 um) length of a Si waveguide to an annealing laser pulse, the longitudinal phase of light acquired in propagating through the waveguide can be modified with high precision, <15 milliradian per laser pulse. Phase tuning by 180 degrees is exhibited with multiple exposures to one arm of a Mach-Zehnder interferometer at fluence values below the morphological damage threshold of an etched Si waveguide. No reduction in optical transmission at 1550 nm was found after 220 annealing laser shots. Modeling results for laser annealing in Si are also presented.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aadila, A., E-mail: aadilaazizali@gmail.com; Afaah, A. N.; Asib, N. A. M.

Poly(methyl methacrylate) (PMMA) films were deposited on glass substrate by sol-gel spin-coating method. The films were annealed for 10 minutes in furnace at different annealing temperature of room temperature, 50, 100, 150 and 200 °C. The effect of annealing temperatures to the surface and optical properties of PMMA films spin-coated on the substrate were investigated by Atomic Force Microscope (AFM) and Ultraviolet-Visible (UV-Vis) Spectroscopy. It was observed in AFM analysis all the annealed films show excellent smooth surface with zero roughness. All the samples demonstrate a high transmittance of 80% in UV region as shown in UV-Vis measurement. Highly transparentmore » films indicate the films are good optical properties and could be applied in various optical applications and also in non-linear optics.« less

Selective bond breaking mediated by state specific vibrational excitation in model HOD molecule through optimized femtosecond IR pulse: a simulated annealing based approach.

PubMed

Shandilya, Bhavesh K; Sen, Shrabani; Sahoo, Tapas; Talukder, Srijeeta; Chaudhury, Pinaki; Adhikari, Satrajit

2013-07-21

The selective control of O-H/O-D bond dissociation in reduced dimensionality model of HOD molecule has been explored through IR+UV femtosecond pulses. The IR pulse has been optimized using simulated annealing stochastic approach to maximize population of a desired low quanta vibrational state. Since those vibrational wavefunctions of the ground electronic states are preferentially localized either along the O-H or O-D mode, the femtosecond UV pulse is used only to transfer vibrationally excited molecule to the repulsive upper surface to cleave specific bond, O-H or O-D. While transferring from the ground electronic state to the repulsive one, the optimization of the UV pulse is not necessarily required except specific case. The results so obtained are analyzed with respect to time integrated flux along with contours of time evolution of probability density on excited potential energy surface. After preferential excitation from [line]0, 0> ([line]m, n> stands for the state having m and n quanta of excitations in O-H and O-D mode, respectively) vibrational level of the ground electronic state to its specific low quanta vibrational state ([line]1, 0> or [line]0, 1> or [line]2, 0> or [line]0, 2>) by using optimized IR pulse, the dissociation of O-D or O-H bond through the excited potential energy surface by UV laser pulse appears quite high namely, 88% (O-H ; [line]1, 0>) or 58% (O-D ; [line]0, 1>) or 85% (O-H ; [line]2, 0>) or 59% (O-D ; [line]0, 2>). Such selectivity of the bond breaking by UV pulse (if required, optimized) together with optimized IR one is encouraging compared to the normal pulses.

Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study

PubMed Central

2013-01-01

We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix. PMID:24314071

Annealing temperature and environment effects on ZnO nanocrystals embedded in SiO2: a photoluminescence and TEM study.

PubMed

Pita, Kantisara; Baudin, Pierre; Vu, Quang Vinh; Aad, Roy; Couteau, Christophe; Lérondel, Gilles

2013-12-06

We report on efficient ZnO nanocrystal (ZnO-NC) emission in the near-UV region. We show that luminescence from ZnO nanocrystals embedded in a SiO2 matrix can vary significantly as a function of the annealing temperature from 450°C to 700°C. We manage to correlate the emission of the ZnO nanocrystals embedded in SiO2 thin films with transmission electron microscopy images in order to optimize the fabrication process. Emission can be explained using two main contributions, near-band-edge emission (UV range) and defect-related emissions (visible). Both contributions over 500°C are found to be size dependent in intensity due to a decrease of the absorption cross section. For the smallest-size nanocrystals, UV emission can only be accounted for using a blueshifted UV contribution as compared to the ZnO band gap. In order to further optimize the emission properties, we have studied different annealing atmospheres under oxygen and under argon gas. We conclude that a softer annealing temperature at 450°C but with longer annealing time under oxygen is the most preferable scenario in order to improve near-UV emission of the ZnO nanocrystals embedded in an SiO2 matrix.

Formation of a Polycrystalline Silicon Thin Film by Using Blue Laser Diode Annealing

NASA Astrophysics Data System (ADS)

Choi, Young-Hwan; Ryu, Han-Youl

2018-04-01

We report the crystallization of an amorphous silicon thin film deposited on a SiO2/Si wafer using an annealing process with a high-power blue laser diode (LD). The laser annealing process was performed using a continuous-wave blue LD of 450 nm in wavelength with varying laser output power in a nitrogen atmosphere. The crystallinity of the annealed poly-silicon films was investigated using ellipsometry, electron microscope observation, X-ray diffraction, and Raman spectroscopy. Polysilicon grains with > 100-nm diameter were observed to be formed after the blue LD annealing. The crystal quality was found to be improved as the laser power was increased up to 4 W. The demonstrated blue LD annealing is expected to provide a low-cost and versatile solution for lowtemperature poly-silicon processes.

Direct nanopatterning of 100 nm metal oxide periodic structures by Deep-UV immersion lithography.

PubMed

Stehlin, Fabrice; Bourgin, Yannick; Spangenberg, Arnaud; Jourlin, Yves; Parriaux, Olivier; Reynaud, Stéphanie; Wieder, Fernand; Soppera, Olivier

2012-11-15

Deep-UV lithography using high-efficiency phase mask has been developed to print 100 nm period grating on sol-gel based thin layer. High efficiency phase mask has been designed to produce a high-contrast interferogram (periodic fringes) under water immersion conditions for 244 nm laser. The demonstration has been applied to a new developed immersion-compatible sol-gel layer. A sol-gel photoresist prepared from zirconium alkoxides caped with methacrylic acids was developed to achieve 50 nm resolution in a single step exposure. The nanostructures can be thermally annealed into ZrO(2). Such route considerably simplifies the process for elaborating nanopatterned surfaces of transition metal oxides, and opens new routes for integrating materials of interest for applications in the field of photocatalysis, photovoltaic, optics, photonics or microelectronics.

Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

PubMed

Jiang, Jing; Jacobs, Alan G; Wenning, Brandon; Liedel, Clemens; Thompson, Michael O; Ober, Christopher K

2017-09-20

Laser spike annealing was applied to PS-b-PDMS diblock copolymers to induce short-time (millisecond time scale), high-temperature (300 to 700 °C) microphase segregation and directed self-assembly of sub-10 nm features. Conditions were identified that enabled uniform microphase separation in the time frame of tens of milliseconds. Microphase ordering improved with increased temperature and annealing time, whereas phase separation contrast was lost for very short annealing times at high temperature. PMMA brush underlayers aided ordering under otherwise identical laser annealing conditions. Good long-range order for sub-10 nm cylinder morphology was achieved using graphoepitaxy coupled with a 20 ms dwell laser spike anneal above 440 °C.

Excimer laser annealing of NiTi shape memory alloy thin film

NASA Astrophysics Data System (ADS)

Xie, Qiong; Huang, Weimin; Hong, Ming Hui; Song, Wendong; Chong, Tow Chong

2003-02-01

NiTi Shape Memory Alloy (SMA) is with great potential for actuation in microsystems. It is particularly suitable for medical applications due to its excellent biocompatibility. In MEMS, local annealing of SMA is required in the process of fabrication. In this paper, local annealing of Ni52Ti48 SMA with excimer laser is proposed for the first time. The Ni52Ti48 thin film in a thickness of 5 μm was deposited on Si (100) wafer by sputtering at room temperature. After that, the thin film was annealed by excimer laser (248nm KrF laser) for the first time. Field-Emission Scanning Electron Microscopy (FESEM) and Atomic Force Microscopy (AFM) were used to characterize the surface profile of the deposited film after laser annealing. The phase transformation was measured by Differential Scanning Calorimeter (DSC) test. It is concluded that NiTi film sputtering on Si(100) substrate at room temperature possesses phase transformation after local laser annealing but with cracks.

Enhancing the branching ratios in the dissociation channels for O{sup 16}O{sup 16}O{sup 18} molecule by designing optimum laser pulses: A study using stochastic optimization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Talukder, Srijeeta; Chaudhury, Pinaki, E-mail: pinakc@rediffmail.com; Sen, Shrabani

We propose a strategy of using a stochastic optimization technique, namely, simulated annealing to design optimum laser pulses (both IR and UV) to achieve greater fluxes along the two dissociating channels (O{sup 18} + O{sup 16}O{sup 16} and O{sup 16} + O{sup 16}O{sup 18}) in O{sup 16}O{sup 16}O{sup 18} molecule. We show that the integrated fluxes obtained along the targeted dissociating channel is larger with the optimized pulse than with the unoptimized one. The flux ratios are also more impressive with the optimized pulse than with the unoptimized one. We also look at the evolution contours of the wavefunctions alongmore » the two channels with time after the actions of both the IR and UV pulses and compare the profiles for unoptimized (initial) and optimized fields for better understanding the results that we achieve. We also report the pulse parameters obtained as well as the final shapes they take.« less

WFC3 UVIS Pixel-to-Pixel QE Variations via Internal Flats Monitor

NASA Astrophysics Data System (ADS)

Bajaj, Varun

2016-10-01

The UVIS detector has a population of pixels that exhibit anomalous QE variations between anneals, characterized by a sensitivity loss that is greater in the blue than in the red. This population is randomly distributed, with evidence of clustering behavior in the UV, and is seemingly unique for each anneal cycle. This program, a continuation of cycle 23 program 14389, will aim to constrain the maximum low-sensitivity population existing before an anneal in both the UV and Visible filters. To monitor the UV behavior, internal flats with the D2 lamp will be taken through F225W and F336W. To monitor the behavior in the Visible filters, internal flats with the tungsten lamp will be taken a week before the anneal, when the population of anomalous pixels is the greatest. Internal flats with the Tungsten lamp will be taken to monitor the population in the visible filters, with data taken the week before the anneal to sample the maximum population of anomalous pixels.

IGZO TFT-based circuit with tunable threshold voltage by laser annealing

NASA Astrophysics Data System (ADS)

Huang, Xiaoming; Yu, Guang; Wu, Chenfei

2017-11-01

In this work, a high-performance inverter based on amorphous indium-gallium-zinc oxide thin-film transistors (TFTs) has been fabricated, which consists of a driver TFT and a load TFT. The threshold voltage (Vth) of the load TFT can be tuned by applying an area-selective laser annealing. The transfer curve of the load TFT shows a parallel shift into the negative bias direction upon laser annealing. Based on x-ray photoelectron spectroscopy analyses, the negative Vth shift can be attributed to the increase of oxygen vacancy concentration within the device channel upon laser irradiation. Compared to the untreated inverter, the laser annealed inverter shows much improved switching characteristics, including a large output swing range which is close to full swing, as well as an enhanced output voltage gain. Furthermore, the dynamic performance of ring oscillator based on the laser-annealed inverter is improved.

Excimer laser annealing for low-voltage power MOSFET

NASA Astrophysics Data System (ADS)

Chen, Yi; Okada, Tatsuya; Noguchi, Takashi; Mazzamuto, Fulvio; Huet, Karim

2016-08-01

Excimer laser annealing of lumped beam was performed to form the P-base junction for high-performance low-voltage-power MOSFET. An equivalent shallow-junction structure for the P-base junction with a uniform impurity distribution is realized by adopting excimer laser annealing (ELA). The impurity distribution in the P-base junction can be controlled precisely by the irradiated pulse energy density and the number of shots of excimer laser. High impurity activation for the shallow junction has been confirmed in the melted phase. The application of the laser annealing technology in the fabrication process of a practical low-voltage trench gate MOSFET was also examined.

Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thapa, Dinesh; Huso, Jesse; Morrison, John L.

ZnO is an efficient luminescent material in the UV-range ~3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O 2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphologymore » and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zn i related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O 2 ambient was found to introduce nominal O i centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ~40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zn i-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Lastly, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects.« less

Achieving highly-enhanced UV photoluminescence and its origin in ZnO nanocrystalline films

DOE PAGES

Thapa, Dinesh; Huso, Jesse; Morrison, John L.; ...

2016-06-14

ZnO is an efficient luminescent material in the UV-range ~3.4 eV with a wide range of applications in optical technologies. Sputtering is a cost-effective and relatively straightforward growth technique for ZnO films; however, most as-grown films are observed to contain intrinsic defects which can significantly diminish the desirable UV-emission. In this research the defect dynamics and optical properties of ZnO sputtered films were studied via post-growth annealing in Ar or O 2 ambient, with X-ray diffraction (XRD), imaging, transmission and Urbach analysis, Raman scattering, and photoluminescence (PL). The imaging, XRD, Raman and Urbach analyses indicate significant improvement in crystal morphologymore » and band-edge characteristics upon annealing, which is nearly independent of the annealing environment. The native defects specific to the as-grown films, which were analyzed via PL, are assigned to Zn i related centers that luminesce at 2.8 eV. Their presence is attributed to the nature of the sputtering growth technique, which supports Zn-rich growth conditions. After annealing, in either environment the 2.8 eV center diminished accompanied by morphology improvement, and the desirable UV-PL significantly increased. The O 2 ambient was found to introduce nominal O i centers while the Ar ambient was found to be the ideal environment for the enhancement of the UV-light emission: an enhancement of ~40 times was achieved. The increase in the UV-PL is attributed to the reduction of Zn i-related defects, the presence of which in ZnO provides a competing route to the UV emission. Also, the effect of the annealing was to decrease the compressive stress in the films. Lastly, the dominant UV-PL at the cold temperature regime is attributed to luminescent centers not associated with the usual excitons of ZnO, but rather to structural defects.« less

TiOx-based thin-film transistors prepared by femtosecond laser pre-annealing

NASA Astrophysics Data System (ADS)

Shan, Fei; Kim, Sung-Jin

2018-02-01

We report on thin-film transistors (TFTs) based on titanium oxide (TiOx) prepared using femtosecond laser pre-annealing for electrical application of n-type channel oxide transparent TFTs. Amorphous TFTs using TiOx semiconductors as an active layer have a low-temperature process and show remarkable electrical performance. And the femtosecond laser pre-annealing process has greater flexibility and development space for semiconductor production activity, with a fast preparation method. TFTs with a TiOx semiconductor pre-annealed via femtosecond laser at 3 W have a pinhole-free and smooth surface without crystal grains.

Large-scale fabrication of nanopatterned sapphire substrates by annealing of patterned Al thin films by soft UV-nanoimprint lithography

PubMed Central

2013-01-01

Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718

WFC3 UVIS Pixel-to-Pixel QE Variations via Internal Flats Monitor

NASA Astrophysics Data System (ADS)

Mckay, Myles

2017-08-01

The UVIS detector has a population of pixels that exhibit anomalous QE variations between anneals, characterized by a sensitivity loss that is greater in the shorter wavelengths(blue) than in the longer wavelengths(red). This population is distributed randomly, with evidence of grouping behavior in the UV, and is seemingly different for each anneal cycle. This program, a continuation of cycle 24 program 14546, will aim to constrain the maximum low-sensitivity population existing before an anneal in both the UV and Visible filters. To monitor the UV behavior, internal flats with the Deuterium D2 lamp will be taken through the filters, F225W and F336W. To monitor the behavior in the Visible filters, internal flats with the tungsten lamp will be taken through F814W and F438W a week before the anneal, when the population of anomalous pixels is the greatest.

3D nanostructured inkjet printed graphene via UV-pulsed laser irradiation enables paper-based electronics and electrochemical devices.

PubMed

Das, Suprem R; Nian, Qiong; Cargill, Allison A; Hondred, John A; Ding, Shaowei; Saei, Mojib; Cheng, Gary J; Claussen, Jonathan C

2016-09-21

Emerging research on printed and flexible graphene-based electronics is beginning to show tremendous promise for a wide variety of fields including wearable sensors and thin film transistors. However, post-print annealing/reduction processes that are necessary to increase the electrical conductivity of the printed graphene degrade sensitive substrates (e.g., paper) and are whole substrate processes that are unable to selectively anneal/reduce only the printed graphene-leaving sensitive device components exposed to damaging heat or chemicals. Herein a pulsed laser process is introduced that can selectively irradiate inkjet printed reduced graphene oxide (RGO) and subsequently improve the electrical conductivity (Rsheet∼0.7 kΩ□(-1)) of printed graphene above previously published reports. Furthermore, the laser process is capable of developing 3D petal-like graphene nanostructures from 2D planar printed graphene. These visible morphological changes display favorable electrochemical sensing characteristics-ferricyanide cyclic voltammetry with a redox peak separation (ΔEp) ≈ 0.7 V as well as hydrogen peroxide (H2O2) amperometry with a sensitivity of 3.32 μA mM(-1) and a response time of <5 s. Thus this work paves the way for not only paper-based electronics with graphene circuits, it enables the creation of low-cost and disposable graphene-based electrochemical electrodes for myriad applications including sensors, biosensors, fuel cells, and theranostic devices.

Nanostructuring of thin Au films deposited on ordered Ti templates for applications in SERS

NASA Astrophysics Data System (ADS)

Grochowska, Katarzyna; Siuzdak, Katarzyna; Macewicz, Łukasz; Skiba, Franciszek; Szkoda, Mariusz; Karczewski, Jakub; Burczyk, Łukasz; Śliwiński, Gerard

2017-10-01

In this work the results on thermal nanostructuring of the Au films on Ti templates as well as morphology and optical properties of the obtained structures are reported. The bimetal nanostructures are fabricated in a multi-step process. First, the titania nanotubes are produced on the surface of Ti foil by anodization in an ethylene glycol-water solution containing fluoride ions. This is followed by chemical etching in oxalic acid and results in a highly ordered dimpled surface. Subsequently, thin gold films (5-20 nm) are deposited onto prepared Ti substrates by magnetron sputtering. The as-prepared layers are then dewetted by the UV nanosecond laser pulses or alternatively in the furnace (temperature < 500 °C). The SEM inspection reveals formation of honeycomb nanostructures (cavity diameter: ∼100 nm) covered with Au nanoparticles (NPs). It is observed that both the laser annealing and continuous thermal treatment in furnace can lead to the creation of NPs inside every Ti dimple and result in uniform coating of the whole area of structured templates. The size and localization of NPs obtained via both dewetting processes as well as their shape can be tuned by the annealing time and the laser processing parameters and also by initial thickness of Au layer and presence of the dimples themselves in the substrate. Results confirm that the prepared material can be used as substrate for SERS (Surface Enhanced Raman Spectroscopy).

Radiation damage of all-silica fibers in the UV region

NASA Astrophysics Data System (ADS)

Gombert, Joerg; Ziegler, M.; Assmus, J.; Klein, Karl-Friedrich; Nelson, Gary W.; Clarkin, James P.; Pross, H.; Kiefer, J.

1999-04-01

Since several years, UVI-fibers having higher solarization- resistance are well known stimulating new fiber-optic applications in the UV-region below 250 nm. Besides the description of the improved transmission properties of UV- light from different UV-sources, the mechanisms of improvement have been discussed in detail. The UV-defects, mainly the E'- center with the UV-absorption band around 215 nm, were passivated by using hydrogen-doping. Besides DUV-light, ionizing radiation like Gamma-radiation or X-rays can create similar defects in the UV-region. In the past, the radiation- damage in the UV-region was studied on silica bulk samples: again, E'-centers were generated. Up to now, no UV- transmission through a 1 m long fiber during or after Gamma- radiation had been observed. However, the hydrogen in the UVI- fibers behaves the same for Gamma-irradiation, leading to a passivation of the radiation-induced defects and an improved transmission in the UV-C region below 250 nm. On this report, the influence of total dose and fiber diameter on the UV- damage after irradiation will be described and discussed. In addition, we will include annealing studies, with and without UV-light. Based on our results, the standard process of Gamma- sterilization with a total dose of approx. 2 Mrad can be used for UVI-fibers resulting in a good UV-transmission below 320 nm. Excimer-laser light at 308 nm (XeCl) and 248 nm (KrF) and deuterium-lamp light with the full spectrum starting at 200 nm can also be transmitted.

Cu(In,Ga)Se2 thin films annealed using a continuous wave Nd:YAG laser (λ0 = 532 nm): Effects of laser-annealing time

NASA Astrophysics Data System (ADS)

Yoo, Myoung Han; Ko, Pil Ju; Kim, Nam-Hoon; Lee, Hyun-Yong

2017-12-01

Preparation of Cu(In,Ga)Se2 (CIGS) thin films has continued to face problems related to the selenization of sputtered Cu-In-Ga precursors when using H2Se vapor in that the materials are highly toxic and the facilities extremely costly. Another obstacle facing the production of CIGS thin films has been the required annealing temperature, as it relates to the decomposition temperature of a typical flexible polymer substrate. A novel laser-annealing process for CIGS thin films, which does not involve the selenization process and which can be performed at a lower temperature, has been proposed. Following sputtering with a Cu0.9In0.7Ga0.3Se2 target, the laser-annealing of the CIGS thin film was performed using a continuous 532-nm Nd:YAG laser with an annealing time of 200 - 1000 s at a laser optical power of 2.75 W. CIGS chalcopyrite (112), (220/204), and (312/116) phases, with some weak diffraction peaks corresponding to the Cu-Se- or the In-Se-related phases, were successfully obtained for all the CIGS thin films that had been laser-annealed at 2.75 W. The lattice parameters, the d-spacing, the tetragonal distortion parameter, and the strain led to the crystallinity being worse and grain size being smaller at 600 s while better crystallinity was obtained at 200 and 800 s, which was closely related to the deviations from molecularity and stoichiometry, which were greatest at 600 s while the values exhibited near-stoichiometric compositions at 200 and 800 s. The band gaps of the laser-annealed CIGS thin films were within a range of 1.765 - 1.977 eV and depended on the internal stress. The mean absorbance of the laser-annealed CIGS thin films was within a range of 1.598 - 1.900, suggesting that approximately 97.47 - 98.74% of the incident photons in the visible spectral region were absorbed by this 400-nm film. The conductivity types exhibited the same deviations (Δ m > 0 and Δ s < 0) in all the laser-annealed CIGS thin films. After laser-annealing, the resistivity fell abruptly to a range of 3.551 × 10 -2 - 1.022 × 10 -1 Ω·cm. The carrier concentration was on the order of 1019 - 1021 cm -3, and the carrier mobility was 5.7 × 10 -2 - 5.7 × 100 cm2/V·s.

Hyperdoping silicon with selenium: solid vs. liquid phase epitaxy

PubMed Central

Zhou, Shengqiang; Liu, Fang; Prucnal, S.; Gao, Kun; Khalid, M.; Baehtz, C.; Posselt, M.; Skorupa, W.; Helm, M.

2015-01-01

Chalcogen-hyperdoped silicon shows potential applications in silicon-based infrared photodetectors and intermediate band solar cells. Due to the low solid solubility limits of chalcogen elements in silicon, these materials were previously realized by femtosecond or nanosecond laser annealing of implanted silicon or bare silicon in certain background gases. The high energy density deposited on the silicon surface leads to a liquid phase and the fast recrystallization velocity allows trapping of chalcogen into the silicon matrix. However, this method encounters the problem of surface segregation. In this paper, we propose a solid phase processing by flash-lamp annealing in the millisecond range, which is in between the conventional rapid thermal annealing and pulsed laser annealing. Flash lamp annealed selenium-implanted silicon shows a substitutional fraction of ~ 70% with an implanted concentration up to 2.3%. The resistivity is lower and the carrier mobility is higher than those of nanosecond pulsed laser annealed samples. Our results show that flash-lamp annealing is superior to laser annealing in preventing surface segregation and in allowing scalability. PMID:25660096

Processing-Structure-Property Relationships in Laser-Annealed PbSe Nanocrystal Thin Films.

PubMed

Treml, Benjamin E; Robbins, Andrew B; Whitham, Kevin; Smilgies, Detlef-M; Thompson, Michael O; Hanrath, Tobias

2015-01-01

As nanocrystal (NC) synthesis techniques and device architectures advance, it becomes increasingly apparent that new ways of connecting NCs with each other and their external environment are required to realize their considerable potential. Enhancing inter-NC coupling by thermal annealing has been a long-standing challenge. Conventional thermal annealing approaches are limited by the challenge of annealing the NC at sufficiently high temperatures to remove surface-bound ligands while at the same time limiting the thermal budget to prevent large-scale aggregation. Here we investigate nonequilibrium laser annealing of NC thin films that enables separation of the kinetic and thermodynamic aspects of nanocrystal fusion. We show that laser annealing of NC assemblies on nano- to microsecond time scales can transform initially isolated NCs in a thin film into an interconnected structure in which proximate dots "just touch". We investigate both pulsed laser annealing and laser spike annealing and show that both annealing methods can produce "confined-but-connected" nanocrystal films. We develop a thermal transport model to rationalize the differences in resulting film morphologies. Finally we show that the insights gained from study of nanocrystal mono- and bilayers can be extended to three-dimensional NC films. The basic processing-structure-property relationships established in this work provide guidance to future advances in creating functional thin films in which constituent NCs can purposefully interact.

CO2 laser annealing of 50-microns-thick silicon solar cells

NASA Technical Reports Server (NTRS)

Walker, F. E.

1979-01-01

A test program is conducted to determine thin solar cell annealing effects using a laser energy source. A CO2 continuous-wave laser was used in annealing experiments on 50 micrometers-thick silicon solar cells after proton irradiation. Test cells were irradiated to a fluence of 1.0 x 10 to the 12th power protons/sq cm with 1.9 MeV protons. After irradiation, those cells receiving full proton dosage were degraded by an average of 30% in output power. In annealing tests laser beam exposure times on the solar cell varied from 2 seconds to 16 seconds reaching cell temperatures of from 400 C to 500 C. Under those conditions annealing test results showed recovery in cell output power of from 33% to 90%.

Laser annealing and in situ absorption measurement of float glass implanted with Ag ions

NASA Astrophysics Data System (ADS)

Okur, I.; Townsend, P. D.

2004-08-01

In this paper in situ pulsed laser annealing and absorption measurements results of Ag-implanted float glass are reported. A Nd:YAG laser harmonic at 266 nm was used to anneal the target area by coupling energy to the glass host, whilst an argon laser at 488 nm was used as a probe beam of changes in nanoparticle size. The equilibrium conditions show a third order power dependence on the laser pulse energy, which is attributed to the volume in which ion migration can occur during excitation.

Effect of Hydrogen Post-Annealing on Transparent Conductive ITO/Ga2O3 Bi-Layer Films for Deep Ultraviolet Light-Emitting Diodes.

PubMed

Kim, Kyeong Heon; Kim, Su Jin; Park, Sang Young; Kim, Tae Geun

2015-10-01

The effect of hydrogen post-annealing on the electrical and optical properties of ITO/Ga2O bi-layer films, deposited by RF magnetron sputtering, is investigated for potential applications to transparent conductive electrodes of ultraviolet (UV) light-emitting diodes. Three samples--an as-deposited sample and two samples post-annealed in N2 gas and N2-H2 gas mixture--were prepared and annealed at different temperatures ranging from 100 °C to 500 °C for comparison. Among these samples, the sample annealed at 300 °C in a mixture of N2 and H2 gases shows the lowest sheet resistance of 301.3 Ω/square and a high UV transmittance of 87.1% at 300 nm.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aadila, A., E-mail: aadilaazizali@gmail.com; Asib, N. A. M.; Afaah, A. N.

In this work, solution-immersion method was used to grow ZnO rods on PMMA-coated substrate. For this purpose, 0.15 M of zinc nitrate hexahydrate (Zn(NO{sub 3}){sub 2}.6H{sub 2}O) and hexamethylenetetramine (C{sub 6}H{sub 12}N{sub 4}) were used to growth of ZnO films at different annealing temperatures (room temperature, 80, 100, 120 and 140 °C). The morphology of the films was investigated by Scanning Electron Microscope (SEM) and optical properties were studied by Ultraviolet (UV-Vis) Spectroscopy. SEM analysis showed ubiquitous growth of ZnO rods that became better aligned and more closely-packed as the annealing temperature increased. As the annealing temperature exceeds 100 °C,more » the rods tend to merge to adjacent particles and the UV absorption decreased for the sample at higher temperatures (120 °C and 140 °C). Good absorption and better orientation of ZnO was obtained for the sample annealed at 100 °C due to the film possess better distribution and these improved orientation of particles caused the light to be effectively scattered on the sample. Both surface morphology and UV was significantly affected by the change in annealing temperatures thus thermal effect played a dominant role in shaping and improving the orientation of ZnO rods on PMMA-coated and its UV absorption.« less

Improved contact characteristics of laser-annealed p-GaN coated with Ni films

NASA Astrophysics Data System (ADS)

Zheng, Bo-Sheng; Ho, Chong-Long; Cheng, Kai-Yuan; Liao, Chien-Lan; Wu, Meng-Chyi; Hsieh, Kuang-Chien

2015-08-01

It is demonstrated that rapid thermal annealing or laser annealing of Mg-doped GaN (about 0.5 μm in thickness) in general helps activate acceptors and increase the average hole concentration by a factor of about 2 from low to mid of 1017/cm3 determined by the Hall measurements. Use of laser annealing of p-GaN coated with Ni and removal afterwards prior to depositing conventional Ni/Au ohmic-contact films, however, greatly improves the contact resistance from 10-2 to 1.6 × 10-4 Ω cm2. Other heat treatment schemes do not improve as much or make it even worse. The most reduction of contact resistance is attributed to the highest surface hole density in an uneven carrier profile achieved by laser annealing with a Ni cap layer.

Improved photoluminescence efficiency in UV nanopillar light emitting diode structures by recovery of dry etching damage.

PubMed

Jeon, Dae-Woo; Jang, Lee-Woon; Jeon, Ju-Won; Park, Jae-Woo; Song, Young Ho; Jeon, Seong-Ran; Ju, Jin-Woo; Baek, Jong Hyeob; Lee, In-Hwan

2013-05-01

In this study, we have fabricated 375-nm-wavelength InGaN/AlInGaN nanopillar light emitting diodes (LED) structures on c-plane sapphire. A uniform and highly vertical nanopillar structure was fabricated using self-organized Ni/SiO2 nano-size mask by dry etching method. To minimize the dry etching damage, the samples were subjected to high temperature annealing with subsequent chemical passivation in KOH solution. Prior to annealing and passivation the UV nanopillar LEDs showed the photoluminescence (PL) efficiency about 2.5 times higher than conventional UV LED structures which is attributed to better light extraction efficiency and possibly some improvement of internal quantum efficiency due to partially relieved strain. Annealing alone further increased the PL efficiency by about 4.5 times compared to the conventional UV LEDs, while KOH passivation led to the overall PL efficiency improvement by more than 7 times. Combined results of Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) suggest that annealing decreases the number of lattice defects and relieves the strain in the surface region of the nanopillars whereas KOH treatment removes the surface oxide from nanopillar surface.

Impacts of excimer laser annealing on Ge epilayer on Si

NASA Astrophysics Data System (ADS)

Huang, Zhiwei; Mao, Yichen; Yi, Xiaohui; Lin, Guangyang; Li, Cheng; Chen, Songyan; Huang, Wei; Wang, Jianyuan

2017-02-01

The impacts of excimer laser annealing on the crystallinity of Ge epilayers on Si substrate grown by low- and high-temperature two-step approach in an ultra-high vacuum chemical vapor deposition system were investigated. The samples were treated by excimer laser annealing (ELA) at various laser power densities with the temperature above the melting point of Ge, while below that of Si, resulting in effective reduction of point defects and dislocations in the Ge layer with smooth surface. The full-width at half-maximum (FWHM) of X-ray diffraction patterns of the low-temperature Ge epilayer decreases with the increase in laser power density, indicating the crystalline improvement and negligible effect of Ge-Si intermixing during ELA processes. The short laser pulse time and large cooling rate cause quick melting and recrystallization of Ge epilayer on Si in the non-thermal equilibrium process, rendering tensile strain in Ge epilayer as calculated quantitatively with thermal mismatch between Si and Ge. The FWHM of X-ray diffraction patterns is significantly reduced for the two-step grown samples after treated by a combination of ELA and conventional furnace thermal annealing, indicating that the crystalline of Ge epilayer is improved more effectively with pre- annealing by excimer laser.

Laser Annealing on the Surface Treatment of Thin Super Elastic NiTi Wire

NASA Astrophysics Data System (ADS)

Samal, S.; Heller, L.; Brajer, J.; Tyc, O.; Kadrevek, L.; Sittner, P.

2018-05-01

Here the aim of this research is annealing the surface of NiTi wire for shape memory alloy, super-elastic wire by solid state laser beam. The laser surface treatment was carried out on the NiTi wire locally with fast, selective, surface heat treatment that enables precisely tune the localized material properties without any precipitation. Both as drawn (hard) and straight annealing NiTi wire were considered for laser annealing with input power 3 W, with precisely focusing the laser beam height 14.3 % of the Z-axis with a spot size of 1 mm. However, straight annealing wire is more interest due to its low temperature shape setting behavior and used by companies for stent materials. The variable parameter such as speed of the laser scanning and tensile stress on the NiTi wire were optimized to observe the effect of laser response on the sample. Superelastic, straight annealed NiTi wires (d: 0.10 mm) were held prestrained at the end of the superelastic plateau (ε: 5 ∼6.5 %) above the superelastic region by a tensile machine ( Mitter: miniature testing rig) at room temperature (RT). Simultaneously, the hardness of the wires along the cross-section was performed by nano-indentation (NI) method. The hardness of the NiTi wire corresponds to phase changes were correlated with NI test. The laser induced NiTi wire shows better fatigue performance with improved 6500 cycles.

Effect of laser processing on physical properties of (Ba0.85Ca0.15Ti0.9Zr0.1O3) lead-free thick films fabricated by the electrophoretic deposition

NASA Astrophysics Data System (ADS)

Ramana, E. Venkata; Ferreira, N. M.; Mahajan, A.; Ferro, Marta C.; Figueiras, F.; Graça, M. P. F.; Valente, M. A.

2018-02-01

In this work, we have fabricated lead-free piezoelectric Ba0.85Ca0.15Ti0.9Zr0.1O3 thick films by the electrophoretic deposition (EPD) followed by a continuous-wave CO2 laser annealing and demonstrated the effect of laser energy on the quality of the final product. Thick films annealed under optimized conditions, 50 W/15 min, show a controlled microstructure/density compared to those derived from higher laser power/annealing time/conventional sintering. The increase in laser power above this limit affects the grain growth kinetics and results in the compositional heterogeneities. From the results of Raman spectra, it was found that the film annealed under optimized conditions has a high degree of crystallinity and tetragonality, while the increase in laser fluence results in the growth of A1g mode. The controlled composition and microstructure, thus has resulted in the improved ferroelectricity with a remanent polarization 12 μC/cm2, on par with the bulk or larger than the films grown by the chemical solution deposition techniques. From the piezoresponse studies, we found that the film annealed at 75 W/5 min has weak ferroelectric nature with no switchable ferroelectric domains compared to those under optimized conditions. Subtle differences in phase transition temperatures and drop in ferroelectric polarization, for films annealed conventionally or at higher laser fluence, are related to porosity or site defects as well as compositional heterogeneities. Our study demonstrates that the combination of EPD and laser annealing is an effective way to achieve high quality piezoelectric thick films with a controlled composition, useful for energy harvesting applications.

Alternative to classic annealing treatments for fractally patterned TiO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Overschelde, O. van; Wautelet, M.; Guisbiers, G.

2008-11-15

Titanium dioxide thin films have been deposited by reactive magnetron sputtering on glass and subsequently irradiated by UV radiation using a KrF excimer laser. The influence of the laser fluence (F) on the constitution and microstructure of the deposited films is studied for 0.05

Studying hardness, workability and minimum bending radius in selectively laser-sintered Ti–6Al–4V alloy samples

NASA Astrophysics Data System (ADS)

Galkina, N. V.; Nosova, Y. A.; Balyakin, A. V.

2018-03-01

This research is relevant as it tries to improve the mechanical and service performance of the Ti–6Al–4V titanium alloy obtained by selective laser sintering. For that purpose, sintered samples were annealed at 750 and 850°C for an hour. Sintered and annealed samples were tested for hardness, workability and microstructure. It was found that incomplete annealing of selectively laser-sintered Ti–6Al–4V samples results in an insignificant reduction in hardness and ductility. Sintered and incompletely annealed samples had a hardness of 32..33 HRC, which is lower than the value of annealed parts specified in standards. Complete annealing at temperature 850°C reduces the hardness to 25 HRC and ductility by 15...20%. Incomplete annealing lowers the ductility factor from 0.08 to 0.06. Complete annealing lowers that value to 0.025. Complete annealing probably results in the embrittlement of sintered samples, perhaps due to their oxidation and hydrogenation in the air. Optical metallography showed lateral fractures in both sintered and annealed samples, which might be the reason why they had lower hardness and ductility.

Effects of oxygen vacancy on the photoconductivity in BaSnO3

NASA Astrophysics Data System (ADS)

Park, Jisung; Char, Kookrin; Institute of Applied Physics, Department of Physics; Astronomy, Seoul National University Team

We have found the photoconductive behavior of BaSnO3, especially their magnitude and time dependence, is very sensitive to the oxygen vacancy concentration. We made epitaxial BaSnO3 film with BaHfO3 buffer layer by pulsed laser deposition. As we had reported before, MgO substrate with its large band gap size about 7.8 eV was used to exclude any photoconductance from the substrate. BaHfO3 layer was used to reduce the threading dislocation density in BaSnO3 film. To control the oxygen vacancy concentration in the BaSnO3 film, we annealed the sample in Ar or O2 atmosphere with varying annealing conditions. After each annealing process, photoconductivity of BaSnO3 was measured during illumination of UV light. The result showed that the magnitude of photoconductivity of BaSnO3 increased after annealing at higher temperature in Ar atmosphere, while the changes in the dark current remains minimal. The result can be explained by a hole trap mechanism. Higher Fermi level due to the increased oxygen vacancy concentration can cause occupation of deep acceptor levels in dislocations of the BaSnO3 film. These occupied deep acceptor levels in turn trap photo-generated holes so that the recombination of electron-hole pair is deterred. Samsung Science and Technology Foundation.

Annealing effect of the InAs dot-in-well structure grown by MBE

NASA Astrophysics Data System (ADS)

Zhao, Xuyi; Wang, Peng; Cao, Chunfang; Yan, Jinyi; Zha, Fangxing; Wang, Hailong; Gong, Qian

2017-12-01

We have demonstrated that in situ annealing effect has to be taken into account in order to realize the 1.31 μm InAs quantum dot (QD) lasers with the dot-in-well (DWELL) structure. The photoluminescence (PL) properties have been investigated for the InAs DWELL samples annealed at different temperatures in situ, simulating the annealing process during the growth of the top cladding AlGaAs layer in the laser structure. The QDs with large size in the DWELL structure are vulnerable to the annealing process at temperatures above 550 °C, revealed by the drastic change in the PL spectra. However, the DWELL structure is stable during the annealing process at 540 °C for three hours. The thermal stability of the QDs in the DWELL structure has to be considered in the growth of QD lasers for long wavelength operation.

Fabrication of three-dimensional crystalline silicon-on-carbon nanotube nanocomposite anode by sputtering and laser annealing for high-performance lithium-ion battery

NASA Astrophysics Data System (ADS)

Kim, Ilwhan; Hyun, Seungmin; Nam, Seunghoon; Lee, Hoo-Jeong; Kang, Chiwon

2018-05-01

In this study, we fabricate a three-dimensional (3D) crystalline Si (c-Si)/carbon nanotube (CNT) nanocomposite anode by sputtering Si on 3D CNTs followed by laser annealing for Si crystallization — a simple, cost-effective route — for advanced Li-ion battery (LIB) applications. We use scanning electron microscopy, X-ray diffraction spectroscopy, and Raman spectroscopy to analyze the samples annealed at different laser energy densities. As a result, we confirm that laser annealing enables Si crystallization without damaging the CNTs. We assemble half-type coin cells for the battery performance test: the 3D c-Si/CNT anode sample demonstrates a specific capacity superior to that of its control counterpart; the cyclic stability is also enhanced significantly.

Pulsed Laser Annealing of Carbon

NASA Astrophysics Data System (ADS)

Abrahamson, Joseph P.

This dissertation investigates laser heating of carbon materials. The carbon industry has been annealing carbon via traditional furnace heating since at least 1800, when Sir Humphry Davy produced an electric arc with carbon electrodes made from carbonized wood. Much knowledge has been accumulated about carbon since then and carbon materials have become instrumental both scientifically and technologically. However, to this day the kinetics of annealing are not known due to the slow heating and cooling rates of furnaces. Additionally, consensus has yet to be reached on the cause of nongraphitizability. Annealing trajectories with respect to time at temperature are observed from a commercial carbon black (R250), model graphitizable carbon (anthracene coke) and a model nongraphitizable carbon (sucrose char) via rapid laser heating. Materials were heated with 1064 nm and 10.6 im laser radiation from a Q-switched Nd:YAG laser and a continuous wave CO2 laser, respectively. A pulse generator was used reduce the CO2 laser pulse width and provide high temporal control. Time-temperature-histories with nanosecond temporal resolution and temperature reproducibility within tens of degrees Celsius were determined by spectrally resolving the laser induced incandescence signal and applying multiwavelength pyrometry. The Nd:YAG laser fluences include: 25, 50, 100, 200, 300, and 550 mJ/cm2. The maximum observed temperature ranged from 2,400 °C to the C2 sublimation temperature of 4,180 °C. The CO2 laser was used to collect a series of isothermal (1,200 and 2,600 °C) heat treatments versus time (100 milliseconds to 30 seconds). Laser heated samples are compared to furnace annealing at 1,200 and 2,600 °C for 1 hour. The material transformation trajectory of Nd:YAG laser heated carbon is different than traditional furnace heating. The traditional furnace annealing pathway is followed for CO2 laser heating as based upon equivalent end structures. The nanostructure of sucrose char after 5 seconds of isothermal annealing at 2,600 °C is comprised almost entirely of quasi-spherical closed shell particles that are free of sp3 and oxygen content. With additional time at temperature the particles unravel and propagative particle opening occurs throughout the material. The irregular pore structure found in the end product is a result of particle unraveling. The structures found in heat treated sucrose char believed to contain odd membered rings are not manufactured during the annealing process due to impinging growth of stacks. Thus, odd membered rings are likely present in the starting non-graphitizable char. Furnace annealing of cokes and chars produced from: oxygen containing compounds (polyfurfuryl alcohol and anthanthrone), from a five membered ring containing polyaromatic hydrocarbon (fluorene), and from sulfur containing decant oil and a blend of anthracene-dibenzothiophene were compared to furnace annealed anthracene coke and sucrose char. The majority of initial oxygen content evolved out during low temperature carbonization. The intermediate species formed after oxygen evolution dictated the resulting carbon skeleton and thus the graphitizability. Carbonization of anthanthrone resulted in a graphitizable coke. It is proposed that carbon monoxide loss from anthanthrone results in the formation of perylene. An obvious resemblance was observed in structure between heat treated sucrose and polyfurfuryl alcohol char as compared to heated treated char embedded with 5 membered rings via carbonization of fluorene. Thus, providing evidence that 5 membered rings are present in the virgin chars and are the cause of non-graphitizability. The heteroatom sulfur effects carbon structure in a different way as compared to oxygen. Sulfur is thermally stable in carbon up to ˜ 1,000 °C and thus plays little role in the initial low temperature (500 °C) carbonization. As such it imparts a relatively unobservable impact on nanostructure, but rather acts to cause micro-cracks upon rapid evolution in the form of H2S and CS2, upon subsequent heat treatment. Laboratory generated synthetic soot from benzene and benzene-thiophene were Nd:YAG laser and furnace annealed. Furnace annealing of sulfur doped synthetic soot results in cracks and rupturing due to the high pressures caused by explosive sulfur evolution at elevated temperature. Whereas Nd:YAG laser heating of the sulfur doped sample acted to induce curvature. The observed curvature is owed to annealing occurring simultaneously with sulfur evolution. The unset lamellae are strongly influenced by the defect formed upon sulfur evolution. Coke and char samples were prepared via carbonization in sealed tubing reactors. The extent of mesophase development was assessed by measuring the materials optical anisotropy with a polarized light microscope. Physical and chemical transformations from annealing were measured with electron microscopy, energy dispersive X-ray spectroscopy, selected area electron diffraction, and electron energy loss spectroscopy. Virgin samples and traditional furnace annealed samples available in bulk were analyzed with X-ray diffraction. The potential technological importance of laser annealing carbon is demonstrated as annealing can be performed continuously and rapidly. Examples of material processing and synthesis not possible via traditional furnace annealing are provided.

Laser patterning of transparent polymers assisted by plasmon excitation.

PubMed

Elashnikov, R; Trelin, A; Otta, J; Fitl, P; Mares, D; Jerabek, V; Svorcik, V; Lyutakov, O

2018-06-13

Plasmon-assisted lithography of thin transparent polymer films, based on polymer mass-redistribution under plasmon excitation, is presented. The plasmon-supported structures were prepared by thermal annealing of thin Ag films sputtered on glass or glass/graphene substrates. Thin films of polymethylmethacrylate, polystyrene and polylactic acid were then spin-coated on the created plasmon-supported structures. Subsequent laser beam writing, at the wavelength corresponding to the position of plasmon absorption, leads to mass redistribution and patterning of the thin polymer films. The prepared structures were characterized using UV-Vis spectroscopy and confocal and AFM microscopy. The shape of the prepared structures was found to be strongly dependent on the substrate type. The mechanism leading to polymer patterning was examined and attributed to the plasmon-heating. The proposed method makes it possible to create different patterns in polymer films without the need for wet technological stages, powerful light sources or a change in the polymer optical properties.

Impact of laser anneal on NiPt silicide texture and chemical composition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. Themore » laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.« less

Impact of laser anneal on NiPt silicide texture and chemical composition

NASA Astrophysics Data System (ADS)

Feautrier, C.; Ozcan, A. S.; Lavoie, C.; Valery, A.; Beneyton, R.; Borowiak, C.; Clément, L.; Pofelski, A.; Salem, B.

2017-06-01

We have combined synchrotron X-ray pole figure measurements and transmission electron microscopy (TEM) nano-beam diffraction to study the impact of millisecond laser anneal on the texture and microstructure of NiPt silicide thin films. The powerful use of nano-beam diffraction in plan-view geometry allows here for both a mapping of grain orientation and intra-grain measurements even if these crystalline grains become very small. With this unique combination of local and large-scale probes, we find that silicide formation on n and p doped substrates using laser annealing results in smaller grains compared with the films processed using standard rapid thermal annealing. The laser annealed samples also result in grains that are more epitaxially oriented with respect to the Si substrate. For n-type substrate, the film is dominated by (020) and (013) oriented fibers with significant levels of intra-grain bending (transrotation) observed in both types of grains. For p-type substrates, mostly epitaxially aligned grains are detected. TEM coupled with energy-dispersive X-ray analysis was also used to study the elemental distribution in the silicide samples. Here, we confirm that laser anneal leads to a larger accumulation of platinum at the silicide-substrate interface and modifies the distribution of dopants throughout the film.

Fabrication of low-loss ridge waveguides in z-cut lithium niobate by combination of ion implantation and UV picosecond laser micromachining

NASA Astrophysics Data System (ADS)

Stolze, M.; Herrmann, T.; L'huillier, J. A.

2016-03-01

Ridge waveguides in ferroelectric materials like LiNbO3 attended great interest for highly efficient integrated optical devices, for instance, electro-optic modulators, frequency converters and ring resonators. The main challenges are the realization of high index barrier towards the substrate and the processing of smooth ridges for minimized scattering losses. For fabricating ridges a variety of techniques, like chemical and wet etching as well as optical grade dicing, have been investigated in detail. Among them, laser micromachining offers a versatile and flexible processing technology, but up to now only a limited side wall roughness has been achieved by this technique. Here we report on laser micromachining of smooth ridges for low-loss optical waveguides in LiNbO3. The ridges with a top width of 7 µm were fabricated in z-cut LiNbO3 by a combination of UV picosecond micromachining and thermal annealing. The laser processing parameters show a strong influence on the achievable sidewall roughness of the ridges and were systematically investigated and optimized. Finally, the surface quality is further improved by an optimized thermal post-processing. The roughness of the ridges were analysed with confocal microscopy and the scattering losses were measured at an optical characterization wavelength of 632.8 nm by using the end-fire coupling method. In these investigations the index barrier was formed by multi-energy low dose oxygen ion implantation technology in a depth of 2.7 μm. With optimized laser processing parameters and thermal post-processing a scattering loss as low as 0.1 dB/cm has been demonstrated.

Structural, thermal, spectroscopic, and spectral dispersion studies of nanocrystalline methyl red thin films

NASA Astrophysics Data System (ADS)

Makhlouf, Mohamed M.; El-Denglawey, Adel

2018-04-01

Methyl red (MR) powder is polycrystalline structure as-purchased. The uniform, homogeneous and no cracks nano MR thin films are successfully prepared using thermal evaporation technique. The structural investigation for the pristine, annealed and UV irradiated MR films shows nanorods spread in amorphous medium. The part of as-prepared films exposed to UV light irradiation of wavelength 254 nm and intensity of 2000 µW/cm2 for 1 h, while the other part of films was treated by the annealing temperature at 178 °C for 1 h. The optical properties of MR thin films were investigated using spectrophotometric measurements of the transmittance and reflectance at normal incidence in the spectral range 200-2000 nm. The optical constants, dispersion parameters, and energy loss and dielectric functions of MR thin films were calculated and showed remarkable dependence on UV irradiation and annealing temperature upon the films of MR. The dependence of absorption coefficient on the photon energy were analyzed and the results showed that MR films undergo direct allowed optical transition for pristine, annealed and irradiated MR films.

Live-monitoring of Te inclusions laser-induced thermo-diffusion and annealing in CdZnTe crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zappettini, A.; Zambelli, N.; Benassi, G.

2014-06-23

The presence of Te inclusions is one of the main factors limiting performances of CdZnTe crystals as X-ray detectors. We show that by means of infrared laser radiation it is possible to move and anneal tellurium inclusions exploiting a thermo-diffusion mechanism. The process is studied live during irradiation by means of an optical microscope equipment. Experimental conditions, and, in particular, energy laser fluence, for annealing inclusions of different dimensions are determined.

Removal of Micrometer Size Morphological Defects and Enhancement of Ultraviolet Emission by Thermal Treatment of Ga-Doped ZnO Nanostructures

PubMed Central

Manzoor, Umair; Kim, Do K.; Islam, Mohammad; Bhatti, Arshad S.

2014-01-01

Mixed morphologies of Ga-doped Zinc Oxide (ZnO) nanostructures are synthesized by vapor transport method. Systematic scanning electron microscope (SEM) studies of different morphologies, after periodic heat treatments, gives direct evidence of sublimation. SEM micrographs give direct evidence that morphological defects of nanostructures can be removed by annealing. Ultra Violet (UV) and visible emission depends strongly on the annealing temperatures and luminescent efficiency of UV emission is enhanced significantly with each subsequent heat treatment. X-Ray diffraction (XRD) results suggest that crystal quality improved by annealing and phase separation may occur at high temperatures. PMID:24489725

Removal of micrometer size morphological defects and enhancement of ultraviolet emission by thermal treatment of Ga-doped ZnO nanostructures.

PubMed

Manzoor, Umair; Kim, Do K; Islam, Mohammad; Bhatti, Arshad S

2014-01-01

Mixed morphologies of Ga-doped Zinc Oxide (ZnO) nanostructures are synthesized by vapor transport method. Systematic scanning electron microscope (SEM) studies of different morphologies, after periodic heat treatments, gives direct evidence of sublimation. SEM micrographs give direct evidence that morphological defects of nanostructures can be removed by annealing. Ultra Violet (UV) and visible emission depends strongly on the annealing temperatures and luminescent efficiency of UV emission is enhanced significantly with each subsequent heat treatment. X-Ray diffraction (XRD) results suggest that crystal quality improved by annealing and phase separation may occur at high temperatures.

Investigation on the behavioral difference in third order nonlinearity and optical limiting of Mn0.55Cu0.45Fe2O4 nanoparticles annealed at different temperatures

NASA Astrophysics Data System (ADS)

Yuvaraj, S.; Manikandan, N.; Vinitha, G.

2017-11-01

Mn0.55Cu0.45Fe2O4 nanoparticles were synthesized by wet chemical co-precipitation method. The obtained samples were annealed at different temperatures (500 °C to 1250 °C). All annealed samples were characterized for their structural, magnetic, linear and non-linear optical properties. XRD results confirm single phase cubic spinel structure only for samples annealed at 800 °C and 1250 °C. The average crystallite sizes of the samples are in the range of 11-37 nm. HR-SEM image of the sample annealed at 800 °C exposed spherical morphology. The quantitative analysis of EDX results is close to the expected values. Bandgaps were evaluated from UV-DRS. The FTIR spectrum showing the essential peaks around 452.1 and 567.2 cm-1 prove the formation of spinel nanoparticles. In PL spectrum, a broad emission peak is attained in visible region at 485 nm. The saturation magnetization (M s), coercivity (H c) and remanence magnetization (M r) are obtained from the hysteresis curve. Nonlinear absorption coefficients (10-4 cm W-1), nonlinear indices of refraction (10-8 cm2 W-1) and the third order nonlinear susceptibilities (10-6 esu) are determined using Z-scan experiment. CW laser beam is utilized to study the optical limiting characteristics and the results prove these materials to be a potential candidate for device applications like optical switches and power limiters.

Reconstructing the energy band electronic structure of pulsed laser deposited CZTS thin films intended for solar cell absorber applications

NASA Astrophysics Data System (ADS)

Pandiyan, Rajesh; Oulad Elhmaidi, Zakaria; Sekkat, Zouheir; Abd-lefdil, Mohammed; El Khakani, My Ali

2017-02-01

We report here on the use of pulsed KrF-laser deposition (PLD) technique for the growth of high-quality Cu2ZnSnS4 (CZTS) thin films onto Si, and glass substrates without resorting to any post sulfurization process. The PLD-CZTS films were deposited at room temperature (RT) and then subjected to post annealing at different temperatures ranging from 200 to 500 °C in Argon atmosphere. The X-ray diffraction and Raman spectroscopy confirmed that the PLD films crystallize in the characteristic kesterite CZTS structure regardless of their annealing temperature (Ta), but their crystallinity is much improved for Ta ≥ 400 °C. The PLD-CZTS films were found to exhibit a relatively dense morphology with a surface roughness (RMS) that increases with Ta (from ∼14 nm at RT to 70 nm at Ta = 500 °C with a value around 40 nm for Ta = 300-400 °C). The optical bandgap of the PLD-CZTS films, was derived from UV-vis transmission spectra analysis, and found to decrease from 1.73 eV for non-annealed films to ∼1.58 eV for those annealed at Ta = 300 °C. These band gap values are very close to the optimum value needed for an ideal solar cell absorber. In order to achieve a complete reconstruction of the one-dimensional energy band structure of these PLD-CZTS absorbers, we have combined both XPS and UPS spectroscopies to determine their chemical bondings, the position of their valence band maximum (relative to Fermi level), and their work function values. This enabled us to sketch out, as accurately as possible, the band alignment of the heterojunction interface formed between CZTS and both CdS and ZnS buffer layer materials.

In situ laser annealing system for real-time surface kinetic analysis

NASA Astrophysics Data System (ADS)

Wang, Q.; Sun, Y.-M.; Zhao, W.; Campagna, J.; White, J. M.

2002-11-01

For real-time analysis during thermal annealing, a continuous wave CO2 infrared laser was coupled to a surface analysis system equipped for x-ray photoelectron spectroscopy (XPS) and ion scattering spectroscopy (ISS). The laser beam was directed into the vacuum chamber through a ZnSe window to the back side of the sample. With 10 W laser output, the sample temperature reached 563 K. The chamber remained below 10-8 Torr during annealing and allowed XPS and ISS data to be gathered as a function of time at selected temperatures. As a test example, real time Cu2O reduction at 563 K was investigated.

[Effects of annealing temperature on the structure and optical properties of ZnMgO films prepared by atom layer deposition].

PubMed

Sun, Dong-Xiao; Li, Jin-Hua; Fang, Xuan; Chen, Xin-Ying; Fang, Fang; Chu, Xue-Ying; Wei, Zhi-Peng; Wang, Xiao-Hua

2014-07-01

In the present paper, we report the research on the effects of annealing temperature on the crystal quality and optical properties of ZnMgO films deposited by atom layer deposition(ALD). ZnMgO films were prepared on quartz substrates by ALD and then some of the samples were treated in air ambient at different annealing temperature. The effects of annealing temperature on the crystal quality and optical properties of ZnMgO films were characterized by X-ray diffraction (XRD), photoluminescence (PL) and ultraviolet-visible (UV-Vis) absorption spectra. The XRD results showed that the crystal quality of ZnMgO films was significantly improved when the annealing temperature was 600 degrees C, meanwhile the intensity of(100) diffraction peak was the strongest. Combination of PL and UV-Vis absorption measurements showed that it can strongly promote the Mg content increasing in ZnMgO films and increase the band gap of films. So the results illustrate that suitable annealing temperature can effectively improve the crystal quality and optical properties of ZnMgO films.

Metastability of a-SiOx:H thin films for c-Si surface passivation

NASA Astrophysics Data System (ADS)

Serenelli, L.; Martini, L.; Imbimbo, L.; Asquini, R.; Menchini, F.; Izzi, M.; Tucci, M.

2017-01-01

The adoption of a-SiOx:H films obtained by PECVD in heterojunction solar cells is a key to further increase their efficiency, because of its transparency in the UV with respect to the commonly used a-Si:H. At the same time this layer must guarantee high surface passivation of the c-Si to be suitable in high efficiency solar cell manufacturing. On the other hand the application of amorphous materials like a-Si:H and SiNx on the cell frontside expose them to the mostly energetic part of the sun spectrum, leading to a metastability of their passivation properties. Moreover as for amorphous silicon, thermal annealing procedures are considered as valuable steps to enhance and stabilize thin film properties, when performed at opportune temperature. In this work we explored the reliability of a-SiOx:H thin film layers surface passivation on c-Si substrates under UV exposition, in combination with thermal annealing steps. Both p- and n-type doped c-Si substrates were considered. To understand the effect of UV light soaking we monitored the minority carriers lifetime and Sisbnd H and Sisbnd O bonding, by FTIR spectra, after different exposure times to light coming from a deuterium lamp, filtered to UV-A region, and focused on the sample to obtain a power density of 50 μW/cm2. We found a certain lifetime decrease after UV light soaking in both p- and n-type c-Si passivated wafers according to a a-SiOx:H/c-Si/a-SiOx:H structure. The role of a thermal annealing, which usually enhances the as-deposited SiOx passivation properties, was furthermore considered. In particular we monitored the UV light soaking effect on c-Si wafers after a-SiOx:H coating by PECVD and after a thermal annealing treatment at 300 °C for 30 min, having selected these conditions on the basis of the study of the effect due to different temperatures and durations. We correlated the lifetime evolution and the metastability effect of thermal annealing to the a-SiOx:H/c-Si interface considering the evolution of hydrogen in the film revealed by FTIR spectra, and we developed a model for the effect of both treatments on the Sisbnd H bonding and the metastability shown in the lifetime of a-SiOx:H/c-Si/a-SiOx:H structure. We found that, after UV exposure, thermal annealing steps can be used as a tool for the c-Si passivation recovery and enhancement.

Optical properties of p–i–n structures based on amorphous hydrogenated silicon with silicon nanocrystals formed via nanosecond laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krivyakin, G. K.; Volodin, V. A., E-mail: volodin@isp.nsc.ru; Kochubei, S. A.

Silicon nanocrystals are formed in the i layers of p–i–n structures based on a-Si:H using pulsed laser annealing. An excimer XeCl laser with a wavelength of 308 nm and a pulse duration of 15 ns is used. The laser fluence is varied from 100 (below the melting threshold) to 250 mJ/cm{sup 2} (above the threshold). The nanocrystal sizes are estimated by analyzing Raman spectra using the phonon confinement model. The average is from 2.5 to 3.5 nm, depending on the laser-annealing parameters. Current–voltage measurements show that the fabricated p–i–n structures possess diode characteristics. An electroluminescence signal in the infrared (IR)more » range is detected for the p–i–n structures with Si nanocrystals; the peak position (0.9–1 eV) varies with the laser-annealing parameters. Radiative transitions are presumably related to the nanocrystal–amorphous-matrix interface states. The proposed approach can be used to produce light-emitting diodes on non-refractory substrates.« less

Studies on the performance of TiO{sub 2} thin films as protective layer to chlorophyll in Ocimum tenuiflorum L from UV radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malliga, P.; Selvi, B. Karunai; Pandiarajan, J.

Thin films of TiO{sub 2} were prepared on glass substrates using sol-gel dip coating technique. The films with 10 coatings were prepared and annealed at temperatures 350°C, 450°C and 550°C for 1 hour in muffle furnace. The annealed films were characterized by X – Ray diffraction (XRD), UV – Visible, AFM, Field Effect Scanning Electron Microscopy (FESEM) and EDAX studies. Chlorophyll has many health benefits due to its structural similarity to human blood and its good chelating ability. It has antimutagenic and anticarcinogenic properties. UV light impairs photosynthesis and reduces size, productivity, and quality in many of the crop plantmore » species. Increased exposure of UV light reduces chlorophyll contents a, b and total content in plants. Titanium Dioxide (TiO{sub 2}) is a wide band gap semiconductor and efficient light harvester. TiO{sub 2} has strong UltraViolet (UV) light absorbing capability. Here, we have studied the performance of TiO{sub 2} thin films as a protective layer to the chlorophyll contents present in medicinal plant, tulsi (Ocimum tenuiflorum L) from UV radiation. The study reveals that crystallite size increases, transmittance decreases and chlorophyll contents increases with increase in annealing temperature. This study showed that TiO{sub 2} thin films are good absorber of UV light and protect the chlorophyll contents a, b and total content in medicinal plants.« less

Deep ultraviolet laser direct write for patterning sol-gel InGaZnO semiconducting micro/nanowires and improving field-effect mobility

PubMed Central

Lin, Hung-Cheng; Stehlin, Fabrice; Soppera, Olivier; Zan, Hsiao-Wen; Li, Chang-Hung; Wieder, Fernand; Ponche, Arnaud; Berling, Dominique; Yeh, Bo-Hung; Wang, Kuan-Hsun

2015-01-01

Deep-UV (DUV) laser was used to directly write indium-gallium-zinc-oxide (IGZO) precursor solution and form micro and nanoscale patterns. The directional DUV laser beam avoids the substrate heating and suppresses the diffraction effect. A IGZO precursor solution was also developed to fulfill the requirements for direct photopatterning and for achieving semi-conducting properties with thermal annealing at moderate temperature. The DUV-induced crosslinking of the starting material allows direct write of semi-conducting channels in thin-film transistors but also it improves the field-effect mobility and surface roughness. Material analysis has been carried out by XPS, FTIR, spectroscopic ellipsometry and AFM and the effect of DUV on the final material structure is discussed. The DUV irradiation step results in photolysis and a partial condensation of the inorganic network that freezes the sol-gel layer in a homogeneous distribution, lowering possibilities of thermally induced reorganization at the atomic scale. Laser irradiation allows high-resolution photopatterning and high-enough field-effect mobility, which enables the easy fabrication of oxide nanowires for applications in solar cell, display, flexible electronics, and biomedical sensors. PMID:26014902

Synthesis and Characterization of ZnO/polymer planar heterojunction solar cells

NASA Astrophysics Data System (ADS)

Gutierrez, Leandro; Manners, William; Nabizadeh, Arya; Albers, Patrick; Duran, Jesus; Scudieri, Anthony; Isah, Anne; McDougall, Michael; Sahiner, Mehmet; Wang, Weining

2014-03-01

ZnO/polymer heterojunction has been studied by many groups for its potential application in solar cell, LED, UV photodetection and other applications. However, there are few studies on ZnO/polymer heterojunction by synthesizing ZnO using pulsed laser deposition (PLD). Comparing with other methods, PLD has the advantage of congruent evaporation, and being able to grow high quality thin films at relatively low temperature. In our previous work in pulsed-laser-deposited (PLD) ZnO/PEDOT:PSS heterojunction, correlations between the annealing conditions of pulsed laser deposition and the electrical performance of solar cells have been observed. In this work, we report two new studies: 1) Studies on how the performance of the PLD-ZnO /PEDOT:PSS heterojunction depends on polymer conductivity; 2) Comparison studies on PLD-ZnO/PEDOT:PSS and PLD-ZnO/P3HT heterojunction. We studied how the performance of ZnO/polymer solar cells depend on the polymer work function and conductivities and deposition condition of ZnO. X-ray diffraction (XRD) and scanning electron microscopy were used to characterize the PLD-ZnO film. The correlation between the solar cell electrical performance and the polymer conductivity and pulsed laser deposition conditions will be discussed.

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing.

PubMed

Bell, Robert T; Jacobs, Alan G; Sorg, Victoria C; Jung, Byungki; Hill, Megan O; Treml, Benjamin E; Thompson, Michael O

2016-09-12

A high-throughput method for characterizing the temperature dependence of material properties following microsecond to millisecond thermal annealing, exploiting the temperature gradients created by a lateral gradient laser spike anneal (lgLSA), is presented. Laser scans generate spatial thermal gradients of up to 5 °C/μm with peak temperatures ranging from ambient to in excess of 1400 °C, limited only by laser power and materials thermal limits. Discrete spatial property measurements across the temperature gradient are then equivalent to independent measurements after varying temperature anneals. Accurate temperature calibrations, essential to quantitative analysis, are critical and methods for both peak temperature and spatial/temporal temperature profile characterization are presented. These include absolute temperature calibrations based on melting and thermal decomposition, and time-resolved profiles measured using platinum thermistors. A variety of spatially resolved measurement probes, ranging from point-like continuous profiling to large area sampling, are discussed. Examples from annealing of III-V semiconductors, CdSe quantum dots, low-κ dielectrics, and block copolymers are included to demonstrate the flexibility, high throughput, and precision of this technique.

Reactive ion-beam-sputtering of fluoride coatings for the UV/VUV range

NASA Astrophysics Data System (ADS)

Schink, Harald; Kolbe, Jurgen; Zimmermann, F.; Ristau, Detlev; Welling, Herbert

1991-06-01

Fluoride coatings produced by thermal evaporation suffer from high scatter losses ageing and cracking due to high tensile stress. These problems impose severe limitations to the production of low loss multilayer coatings for the VUV range. A key position for improved performance is the microstructure of the layers. The aim of our investigations is to improve the microstructure of A1F3- and LaF3-'' films by ionbeamsputtering. Scatter measurements of single layers revealed lower values for lBS than for boat evaporation. Unfortunately sputtered fluoride films nave high absorption losses caused by decomposition of the coating material. By sputtering in reactive atmospheres and annealing we were able to reduce the absorption losses significantly. Antireflective as well as high reflective coatings were produced. Reflection and transmission values were obtained with a VUV-spectrophotometer. Damage tests at the 193 mu ArF laser wavelength were performed at the Laser-Laboratorium Gttingen. Key words: ion-beamsputtering fluoride films UVcoatings VUV-coatings color-center laser damage A]. F3 MgF2 LaF3. 1.

Luminescence and conductivity studies on CVD diamond exposed to UV light

NASA Astrophysics Data System (ADS)

Bizzarri, A.; Bogani, F.; Bruzzi, M.; Sciortino, S.

1999-04-01

The photoluminescence (PL), thermoluminescence (TL) and thermally stimulated currents (TSC) of four high-quality CVD diamond films have been investigated in the range of temperatures between 300 and 700 K. The sample excitation has been carried out by means of an UV xenon lamp and UV laser lines. The features of the signals have been found equal to those obtained from particle excitation. The TL analysis shows the existence of several deep traps with activation energies between 0.6 and 1.0 eV. The contribution to the TL signal from different traps has been singled out by means of successive annealing processes. The TL results are in good agreement with those obtained from TSC measurements. The combined use of the two techniques allows a precise determination of the trap parameters. The spectral content of the TL response has also been compared with the PL signal in order to investigate the recombination process. This analysis shows that, in this temperature range, the TL signal is likely due to recombination from bound states rather than due to radiative free to bound transitions, as generally assumed in TL theory. The TSC signal is likely to arise from impurity band rather than from free carriers conduction.

High Mobility Flexible Amorphous IGZO Thin-Film Transistors with a Low Thermal Budget Ultra-Violet Pulsed Light Process.

PubMed

Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D

2016-12-21

Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm 2 /(V s), as well as a mobility of 7 cm 2 /(V s) on solid substrate (Si/SiO 2 ) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.

Bragg reflector based gate stack architecture for process integration of excimer laser annealing

NASA Astrophysics Data System (ADS)

Fortunato, G.; Mariucci, L.; Cuscunà, M.; Privitera, V.; La Magna, A.; Spinella, C.; Magrı, A.; Camalleri, M.; Salinas, D.; Simon, F.; Svensson, B.; Monakhov, E.

2006-12-01

An advanced gate stack structure, which incorporates a Bragg reflector, has been developed for the integration of excimer laser annealing into the power metal-oxide semiconductor (MOS) transistor fabrication process. This advanced gate structure effectively protects the gate stack from melting, thus solving the problem related to protrusion formation. By using this gate stack configuration, power MOS transistors were fabricated with improved electrical characteristics. The Bragg reflector based gate stack architecture can be applied to other device structures, such as scaled MOS transistors, thus extending the possibilities of process integration of excimer laser annealing.

Effect of excimer laser annealing on a-InGaZnO thin-film transistors passivated by solution-processed hybrid passivation layers

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo; Ishikawa, Yasuaki; Fujii, Mami N.; Nonaka, Toshiaki; Ishihara, Ryoichi; Ikenoue, Hiroshi; Uraoka, Yukiharu

2016-01-01

We demonstrate the use of excimer laser annealing (ELA) as a low temperature annealing alternative to anneal amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) passivated by a solution-processed hybrid passivation layer. Usually, a-IGZO is annealed using thermal annealing at high temperatures of up to 400 °C. As an alternative to high temperature thermal annealing, two types of ELA, XeCl (308 nm) and KrF (248 nm) ELA, are introduced. Both ELA types enhanced the electrical characteristics of a-IGZO TFTs leading to a mobility improvement of ~13 cm2 V-1 s-1 and small threshold voltage which varied from ~0-3 V. Furthermore, two-dimensional heat simulation using COMSOL Multiphysics was used to identify possible degradation sites, analyse laser heat localization, and confirm that the substrate temperature is below 50 °C. The two-dimensional heat simulation showed that the substrate temperature remained at very low temperatures, less than 30 °C, during ELA. This implies that any flexible material can be used as the substrate. These results demonstrate the large potential of ELA as a low temperature annealing alternative for already-passivated a-IGZO TFTs.

Effect of complexing agent on the photoelectrochemical properties of bath deposited CdS thin films

NASA Astrophysics Data System (ADS)

Patil, S. B.; Singh, A. K.

2010-02-01

In the present paper photoelectrochemical (PEC) performance of bath deposited CdS thin films based on complexing agents i.e. ammonia and triethanolamine (TEA) has been discussed. Effect of annealing has also been analyzed. The as-deposited and annealed (at 523 K for 1 h in air) films were characterized by X-ray diffraction (XRD), ultraviolet-visible (UV-vis) absorption spectroscopy, SEM, electrochemical impedance spectroscopy (EIS), and PEC properties. XRD studies revealed that the films were nanocrystalline in nature with mixed hexagonal and cubic phases. TEA complex resulted in better crystallinity. Further improvement in the crystallinity of the films was observed after air annealing. The marigold flower-like structure, in addition to flakes morphology, was observed with TEA complex, whereas for ammonia complex only flakes morphology was observed. The UV-vis absorption studies revealed that the optical absorption edge for the films with ammonia and TEA complex was around 475 nm and 500 nm, respectively. Annealing of the films resulted in red shift in the UV-vis absorption. The PEC cell performance of CdS films was found to be strongly affected by crystallinity and morphology of the films resulted due to complexing agent and annealing. The air annealed film deposited using TEA complex showed maximum short circuit current density ( Jsc) and open circuit voltage ( Voc) i.e. 99 μA/cm 2 and 376 mV respectively, under 10 mW/cm 2 of illumination. The films deposited using TEA complex showed good stability under PEC cell conditions.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

NASA Astrophysics Data System (ADS)

Greenlee, Jordan D.; Feigelson, Boris N.; Anderson, Travis J.; Tadjer, Marko J.; Hite, Jennifer K.; Mastro, Michael A.; Eddy, Charles R.; Hobart, Karl D.; Kub, Francis J.

2014-08-01

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N2 overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at half maximums of the E2 and A1 (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.

Selective Laser Melting Produced Ti-6Al-4V: Post-Process Heat Treatments to Achieve Superior Tensile Properties

PubMed Central

Becker, Thorsten H.

2018-01-01

Current post-process heat treatments applied to selective laser melting produced Ti-6Al-4V do not achieve the same microstructure and therefore superior tensile behaviour of thermomechanical processed wrought Ti-6Al-4V. Due to the growing demand for selective laser melting produced parts in industry, research and development towards improved mechanical properties is ongoing. This study is aimed at developing post-process annealing strategies to improve tensile behaviour of selective laser melting produced Ti-6Al-4V parts. Optical and electron microscopy was used to study α grain morphology as a function of annealing temperature, hold time and cooling rate. Quasi-static uniaxial tensile tests were used to measure tensile behaviour of different annealed parts. It was found that elongated α’/α grains can be fragmented into equiaxial grains through applying a high temperature annealing strategy. It is shown that bi-modal microstructures achieve a superior tensile ductility to current heat treated selective laser melting produced Ti-6Al-4V samples. PMID:29342079

Room temperature photoluminescence properties of ZnO nanorods grown by hydrothermal reaction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Iwan, S., E-mail: iwan-sugihartono@unj.ac.id; Prodi Ilmu Material, Departemen Fisika, FMIPA, Universitas Indonesia, Kampus UI Depok; Fauzia, Vivi

Zinc oxide (ZnO) nanorods were fabricated by a hydrothermal reaction on silicon (Si) substrate at 95 °C for 6 hours. The ZnO seed layer was fabricated by depositing ZnO thin films on Si substrates by ultrasonic spray pyrolisis (USP). The annealing effects on crystal structure and optical properties of ZnO nanorods were investigated. The post-annealing treatment was performed at 800 °C with different environments. The annealed of ZnO nanorods were characterized by X-ray diffraction (XRD) and photoluminescence (PL) in order to analyze crystal structure and optical properties, respectively. The results show the orientations of [002], [101], [102], and [103] diffractionmore » peaks were observed and hexagonal wurtzite structure of ZnO nanorods were vertically grown on Si substrates. The room temperature PL spectra show ultra-violet (UV) and visible emissions. The annealed of ZnO nanorods in vacuum condition (3.8 × 10{sup −3} Torr) has dominant UV emission. Meanwhile, non-annealed of ZnO nanorods has dominant visible emission. It was expected that the annealed of ZnO in vacuum condition suppresses the existence of native defects in ZnO nanorods.« less

Characteristics of OMVPE grown GaAsBi QW lasers and impact of post-growth thermal annealing

NASA Astrophysics Data System (ADS)

Kim, Honghyuk; Guan, Yingxin; Babcock, Susan E.; Kuech, Thomas F.; Mawst, Luke J.

2018-03-01

Laser diodes employing a strain-compensated GaAs1-xBix/GaAs1-yPy single quantum well (SQW) active region were grown by organometallic vapor phase epitaxy (OMVPE). High resolution x-ray diffraction, room temperature photoluminescence, and real-time optical reflectance measurements during the OMVPE growth were used to find the optimum process window for the growth of the active region material. Systematic post-growth in situ thermal anneals of various lengths were carried out in order to investigate the impacts of thermal annealing on the laser device performance characteristics. While the lowest threshold current density was achieved after the thermal annealing for 30 min at 630 °C, a gradual decrease in the external differential quantum efficiency was observed as the annealing time increases. It was observed that the temperature sensitivities of the threshold current density increase while those of lasing wavelength and slope efficiency remain nearly constant with increasing annealing time. Z-contrast scanning transmission electron microscopic) analysis revealed inhomogeneous Bi distribution within the QW active region.

Thermal stress modification in regenerated fiber Bragg grating via manipulation of glass transition temperature based on CO₂-laser annealing.

PubMed

Lai, Man-Hong; Lim, Kok-Sing; Gunawardena, Dinusha S; Yang, Hang-Zhou; Chong, Wu-Yi; Ahmad, Harith

2015-03-01

In this work, we have demonstrated thermal stress relaxation in regenerated fiber Bragg gratings (RFBGs) by using direct CO₂-laser annealing technique. After the isothermal annealing and slow cooling process, the Bragg wavelength of the RFBG has been red-shifted. This modification is reversible by re-annealing and rapid cooling. It is repeatable with different cooling process in the subsequent annealing treatments. This phenomenon can be attributed to the thermal stress modification in the fiber core by means of manipulation of glass transition temperature with different cooling rates. This finding in this investigation is important for accurate temperature measurement of RFBG in dynamic environment.

Activation of acceptor levels in Mn implanted Si by pulsed laser annealing

NASA Astrophysics Data System (ADS)

Li, Lin; Bürger, Danilo; Shalimov, Artem; Kovacs, Gy J.; Schmidt, Heidemarie; Zhou, Shengqiang

2018-04-01

In this paper, we report the magnetic and electrical properties of Mn implanted nearly intrinsic Si wafers after subsecond thermal treatment. Activation of acceptors is realized in pulsed laser annealing (PLA) films with a free hole concentration of 6.29  ×  1020 cm‑3 while the sample annealed by rapid thermal annealing (RTA) shows n-type conductivity with a much smaller free electron concentration in the order of 1015 cm‑3. Ferromagnetism is probed for all films by a SQUID magnetometer at low temperatures. The formation of ferromagnetic MnSi1.7 nanoparticles which was proven in RTA films can be excluded in Mn implanted Si annealed by PLA.

Photocurrent generation in SnO2 thin film by surface charged chemisorption O ions

NASA Astrophysics Data System (ADS)

Lee, Po-Ming; Liao, Ching-Han; Lin, Chia-Hua; Liu, Cheng-Yi

2018-06-01

We report a photocurrent generation mechanism in the SnO2 thin film surface layer by the charged chemisorption O ions on the SnO2 thin film surface induced by O2-annealing. A critical build-in electric field in the SnO2 surface layer resulted from the charged O ions on SnO2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO2 surface layer, which is the key for the photocurrent generation in the SnO2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.

Responses of He-Ne laser on agronomic traits and the crosstalk between UVR8 signaling and phytochrome B signaling pathway in Arabidopsis thaliana subjected to supplementary ultraviolet-B (UV-B) stress.

PubMed

Gao, Limei; Li, Yongfeng; Shen, Zhihua; Han, Rong

2018-05-01

UV-B acclimation effects and UV-B damage repair induced by a 632.8-nm He-Ne laser were investigated in Arabidopsis thaliana plants in response to supplementary UV-B stress. There was an increasing trend in growth parameters in the combination-treated plants with He-Ne laser and UV-B light compared to those stressed with enhanced UV-B light alone during different developmental stages of plants. The photosynthetic efficiency (Pn) and survival rates of seedlings were significantly higher in the combination treatments than UV-B stress alone. The expression of UVR8, phytochrome B (PhyB), and their mediated signal responsive genes such as COP1, HY5, and CHS were also significantly upregulated in plants with the laser irradiation compared with other groups without the laser. Levels of flavonol accumulation in leaves and capsule yield of He-Ne laser-treated plants were increased. The phyB-9 mutants were more sensitive to enhanced UV-B stress and had no obvious improvements in plant phenotypic development and physiological damage caused by enhanced UV-B stress after He-Ne laser irradiation. Our results suggested that UVR8 and its mediated signaling pathway via interaction with COP1 can be induced by He-Ne laser, and these processes were dependent on cytoplasmic PhyB levels in plant cells, which might be one of the most important mechanisms of He-Ne laser on UV-B protection and UV-B damage repair. These current data have also elucidated that the biostimulatory effects of He-Ne laser on Arabidopsis thaliana plants would happen not only during the early growth stage but also during the entire late developmental stage.

Factors affecting color strength of printing on film-coated tablets by UV laser irradiation: TiO2 particle size, crystal structure, or concentration in the film, and the irradiated UV laser power.

PubMed

Hosokawa, Akihiro; Kato, Yoshiteru

2011-08-01

The purpose of this article is to study factors affecting color strength of printing on film-coated tablets by ultraviolet (UV) laser irradiation: particle size, crystal structure, or concentration of titanium dioxide (TiO2) in film, and irradiated UV laser power. Hydroxypropylmethylcellulose films containing 4.0% of TiO2, of which BET particle sizes were ranging from 126.1 to 219.8 nm, were irradiated 3.14W of UV laser at a wavelength 355 nm to study effects of TiO2 particle size and crystal structure on the printing. The films containing TiO2 concentration ranging from 1.0 to 7.7% were irradiated 3.14 or 5.39W of the UV laser to study effect of TiO2 concentration on the printing. The film containing 4.0% of TiO2, was irradiated the UV laser up to 6.42W to study effect of the UV laser power on the printing. The color strength of the printed films was estimated by a spectrophotometer as total color difference (dE). Particle size, crystal structure, and concentration of TiO2 in the films did not affect the printing. In the relationship between the irradiated UV laser power and dE, there found an inflection point (1.6W). When the UV laser power was below 1.6W, the films were not printed. When it was beyond the point, total color difference increased linearly in proportion with the irradiated laser power. The color strength of the printing on film was not changed by TiO2 particle size, crystal structure, and concentration, but could be controlled by regulating the irradiated UV laser power beyond the inflection point.

Strain of laser annealed silicon surfaces

NASA Astrophysics Data System (ADS)

Nemanich, R. J.; Haneman, D.

1982-05-01

High resolution Raman scattering measurements have been carried out on pulse and continuous-wave laser annealed silicon samples with various surface preparations. These included polished and ion-bombarded wafers, and saw-cut crystals. The pulse annealing treatments were carried out in ultrahigh vacuum and in air. The residual strain was inferred from the frequency shift of the first-order Raman active mode of Si, and was detectable in the range 10-2-10-3 in all except the polished samples.

UV lasers for drilling and marking applications.

PubMed

Hannon, T

1999-10-01

Lasers emitting ultraviolet (UV) light have unique capabilities for precision micromachining and marking plastic medical devices. This review of the benefits offered by laser technology includes a look at recently developed UV diode-pumped solid-state lasers and their key features.

Surface Chemistry, Friction, and Wear Properties of Untreated and Laser-Annealed Surfaces of Pulsed-Laser-Deposited WS(sub 2) Coatings

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Wheeler, Donald R.; Zabinski, Jeffrey S.

1996-01-01

An investigation was conducted to examine the surface chemistry, friction, and wear behavior of untreated and annealed tungsten disulfide (WS2) coatings in sliding contact with a 6-mm-diameter 440C stainless-steel ball. The WS2 coatings and annealing were performed using the pulsed-laser-deposition technique. All sliding friction experiments were conducted with a load of 0.98 N (100 g), an average Hertzian contact pressure of 0.44 GPa, and a constant rotating speed of 120 rpm. The sliding velocity ranged from 31 to 107 mm/s because of the range of wear track radii involved in the experiments. The experiment was performed at room temperature in three environments: ultrahigh vacuum (vacuum pressure, 7X(exp -10) Pa), dry nitrogen (relative humidity, less than 1 percent), and humid air (relative humidity, 15 to 40 percent). Analytical techniques, including scanning electron microscopy (SEM), energy-dispersive x-ray spectroscopy (EDX), x-ray photo electron spectroscopy (XPS), surface profilometry, and Vickers hardness testing, were used to characterize the tribological surfaces of WS2 coatings. The results of the investigation indicate that the laser annealing decreased the wear of a WS2 coating in an ultrahigh vacuum. The wear rate was reduced by a factor of 30. Thus, the laser annealing increased the wear life and resistance of the WS2 coating. The annealed WS 2 coating had a low coefficient of friction (less than O.1) and a low wear rate ((10(exp -7) mm(exp 3)/N-m)) both of which are favorable in an ultrahigh vacuum.

Multicycle rapid thermal annealing optimization of Mg-implanted GaN: Evolution of surface, optical, and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greenlee, Jordan D., E-mail: jordan.greenlee.ctr@nrl.navy.mil; Feigelson, Boris N.; Anderson, Travis J.

2014-08-14

The first step of a multi-cycle rapid thermal annealing process was systematically studied. The surface, structure, and optical properties of Mg implanted GaN thin films annealed at temperatures ranging from 900 to 1200 °C were investigated by Raman spectroscopy, photoluminescence, UV-visible spectroscopy, atomic force microscopy, and Nomarski microscopy. The GaN thin films are capped with two layers of in-situ metal organic chemical vapor deposition -grown AlN and annealed in 24 bar of N{sub 2} overpressure to avoid GaN decomposition. The crystal quality of the GaN improves with increasing annealing temperature as confirmed by UV-visible spectroscopy and the full widths at halfmore » maximums of the E{sub 2} and A{sub 1} (LO) Raman modes. The crystal quality of films annealed above 1100 °C exceeds the quality of the as-grown films. At 1200 °C, Mg is optically activated, which is determined by photoluminescence measurements. However, at 1200 °C, the GaN begins to decompose as evidenced by pit formation on the surface of the samples. Therefore, it was determined that the optimal temperature for the first step in a multi-cycle rapid thermal anneal process should be conducted at 1150 °C due to crystal quality and surface morphology considerations.« less

Tuning of deep level emission in highly oriented electrodeposited ZnO nanorods by post growth annealing treatments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Simimol, A.; Department of Physics, National Institute of Technology, Calicut 673601; Manikandanath, N. T.

Highly dense and c-axis oriented zinc oxide (ZnO) nanorods with hexagonal wurtzite facets were deposited on fluorine doped tin oxide coated glass substrates by a simple and cost-effective electrodeposition method at low bath temperature (80 °C). The as-grown samples were then annealed at various temperatures (T{sub A} = 100–500 °C) in different environments (e.g., zinc, oxygen, air, and vacuum) to understand their photoluminescence (PL) behavior in the ultra-violet (UV) and the visible regions. The PL results revealed that the as-deposited ZnO nanorods consisted of oxygen vacancy (V{sub O}), zinc interstitial (Zn{sub i}), and oxygen interstitial (O{sub i}) defects and these can be reduced significantlymore » by annealing in different environments at optimal annealing temperatures. However, the intensity of deep level emission increased for T{sub A} greater than the optimized values for the respective environments due to the introduction of various defect centers. For example, for T{sub A} ≥ 450 °C in the oxygen and air environments, the density of O{sub i} defects increased, whereas, the green emission associated with V{sub O} is dominant in the vacuum annealed (T{sub A} = 500 °C) ZnO nanorods. The UV peak red shifted after the post-growth annealing treatments in all the environments and the vacuum annealed sample exhibited highest UV peak intensity. The observations from the PL data are supported by the micro-Raman spectroscopy. The present study gives new insight into the origin of different defects that exist in the electrodeposited ZnO nanorods and how these defects can be precisely controlled in order to get the desired emissions for the opto-electronic applications.« less

Capillary electrophoresis hyphenated with UV-native-laser induced fluorescence detection (CE/UV-native-LIF).

PubMed

Couderc, François; Ong-Meang, Varravaddheay; Poinsot, Véréna

2017-01-01

Native laser-induced fluorescence using UV lasers associated to CE offers now a large related literature, for now 30 years. The main works have been performed using very expensive Ar-ion lasers emitting at 257 and 275 nm. They are not affordable for routine analyses, but have numerous applications such as protein, catecholamine, and indolamine analysis. Some other lasers such as HeCd 325 nm have been used but only for few applications. Diode lasers, emitting at 266 nm, cheaper, are extensively used for the same topics, even if the obtained sensitivity is lower than the one observed using the costly UV-Ar-ion lasers. This review presents various CE or microchips applications and different UV lasers used for the excitation of native fluorescence. We showed that CE/Native UV laser induced fluorescence detection is very sensitive for detection as well as small aromatic biomolecules than proteins containing Trp and Tyr amino acids. Moreover, it is a simple way to analyze biomolecules without derivatization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Response of antioxidant defense system to laser radiation apical meristem of Isatis indigotica seedlings exposed to UV-B.

PubMed

Chen, Yi-Ping

2009-07-01

To determine the response of antioxidant defense system to laser radiation apical meristem of Isatis indigotica seedlings, Isatis indigotica seedlings were subjected to UV-B radiation (10.08 kJ m(-2)) for 8 h day(-1) for 8 days (PAR, 220 micromol m(-2) s(-1)) and then exposed to He-Ne laser radiation (633 nm; 5.23 mW mm(-2); beam diameter: 1.5 mm) for 5 min each day without ambient light radiation. Changes in free radical elimination systems were measured, the results indicate that: (1) UV-B radiation enhanced the concentration of Malondialdahyde (MDA) and decreased the activities of superoxide dismutase (SOD), catalase (CAT) and peroxidase (POD) in seedlings compared with the control. The concentration of MDA was decreased and the activities of SOD, CAT and POD were increased when seedlings were subjected to elevated UV-B damage followed by laser; (2) the concentration of UV absorbing compounds and proline were increased progressively with UV-B irradiation, laser irradiation and He-Ne laser irradiation plus UV-B irradiation compared with the control. These results suggest that laser radiation has an active function in repairing UV-B-induced lesions in seedlings.

Thermal annealing of lattice-matched InGaAs/InAlAs Quantum-Cascade Lasers

NASA Astrophysics Data System (ADS)

Mathonnière, Sylvain; Semtsiv, M. P.; Ted Masselink, W.

2017-11-01

We describe the evolution of optical power, threshold current, and emission wavelength of a lattice-matched InGaAs/InAlAs Quantum-Cascade Laser (QCL) emitting at 13 μm grown by gas-source molecular-beam epitaxy under thermal annealing. Pieces from the same 2-in wafer were annealed at 600 °C, 650 °C, or 700 °C for 1 h; one control piece remained unannealed. No change in threshold current and emission wavelength was observed. The slope efficiency and maximum emission power increase for the 600 °C anneal, but higher annealing temperatures resulted in degraded performance. This result stands in contrast with the observation that strain-compensated structures cannot withstand annealing temperature of 600 °C. Useful information for post-growth processing steps and the role of interface roughness in QCL performance are obtained.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

NASA Astrophysics Data System (ADS)

Palneedi, Haribabu; Maurya, Deepam; Kim, Gi-Yeop; Priya, Shashank; Kang, Suk-Joong L.; Kim, Kwang-Ho; Choi, Si-Young; Ryu, Jungho

2015-07-01

A highly dense, 4 μm-thick Pb(Zr,Ti)O3 (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, a colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.

Modifying the visual appearance of metal nanoparticle composites by infrared laser annealing

NASA Astrophysics Data System (ADS)

Halabica, Andrej; Indrobo, J. C.; Magruder, R. H., III; Haglund, R. F., Jr.; Epp, J. M.; Rashkeev, S.; Boatner, L. A.; Pennycook, S. J.; Pantelides, S. T.

2007-03-01

It has long been known that noble-metal nanoparticles in insulators can alter their visual appearance. Many metal nanoparticle composites can be created by ion implantation and subsequent annealing to initiate phase separation, nucleation and growth of nanoparticles. The size and size distribution of the nanoparticles - and therefore the color of the composite - are determined by the chemistry and thermodynamics of the annealing process. In this paper we report that we can also alter the color of gold- and silver-implanted silica and alumina by tunable infrared laser irradiation. Essentially a variant of rapid thermal annealing, this laser treatment can shift the plasmon band of the nanoparticles by tens of nm, resulting in significantly altered visual appearance. The amount of energy delivered to the implanted layer, and the subsequent color variation, can be adjusted by changing the wavelength and fluence of the laser. This makes it possible, as we will show, to write or pattern the composite material with 200 μm linewidths. This work is partially supported by DOE (DE-AC05-00OR22725), NSF (DMR-0513048), and by Alcoa Inc.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers

NASA Astrophysics Data System (ADS)

Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-02-01

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm2 was demonstrated.

Elimination of Bimodal Size in InAs/GaAs Quantum Dots for Preparation of 1.3-μm Quantum Dot Lasers.

PubMed

Su, Xiang-Bin; Ding, Ying; Ma, Ben; Zhang, Ke-Lu; Chen, Ze-Sheng; Li, Jing-Lun; Cui, Xiao-Ran; Xu, Ying-Qiang; Ni, Hai-Qiao; Niu, Zhi-Chuan

2018-02-21

The device characteristics of semiconductor quantum dot lasers have been improved with progress in active layer structures. Self-assembly formed InAs quantum dots grown on GaAs had been intensively promoted in order to achieve quantum dot lasers with superior device performances. In the process of growing high-density InAs/GaAs quantum dots, bimodal size occurs due to large mismatch and other factors. The bimodal size in the InAs/GaAs quantum dot system is eliminated by the method of high-temperature annealing and optimized the in situ annealing temperature. The annealing temperature is taken as the key optimization parameters, and the optimal annealing temperature of 680 °C was obtained. In this process, quantum dot growth temperature, InAs deposition, and arsenic (As) pressure are optimized to improve quantum dot quality and emission wavelength. A 1.3-μm high-performance F-P quantum dot laser with a threshold current density of 110 A/cm 2 was demonstrated.

Ultraviolet 320 nm laser excitation for flow cytometry.

PubMed

Telford, William; Stickland, Lynn; Koschorreck, Marco

2017-04-01

Although multiple lasers and high-dimensional analysis capability are now standard on advanced flow cytometers, ultraviolet (UV) lasers (usually 325-365 nm) remain an uncommon excitation source for cytometry. This is primarily due to their cost, and the small number of applications that require this wavelength. The development of the Brilliant Ultraviolet (BUV fluorochromes, however, has increased the importance of this formerly niche excitation wavelength. Historically, UV excitation was usually provided by water-cooled argon- and krypton-ion lasers. Modern flow cytometers primary rely on diode pumped solid state lasers emitting at 355 nm. While useful for all UV-excited applications, DPSS UV lasers are still large by modern solid state laser standards, and remain very expensive. Smaller and cheaper near UV laser diodes (NUVLDs) emitting at 375 nm make adequate substitutes for 355 nm sources in many situations, but do not work as well with very short wavelength probes like the fluorescent calcium chelator indo-1. In this study, we evaluate a newly available UV 320 nm laser for flow cytometry. While shorter in wavelength that conventional UV lasers, 320 is close to the 325 nm helium-cadmium wavelength used in the past on early benchtop cytometers. A UV 320 nm laser was found to excite almost all Brilliant Ultraviolet dyes to nearly the same level as 355 nm sources. Both 320 nm and 355 nm sources worked equally well for Hoechst and DyeCycle Violet side population analysis of stem cells in mouse hematopoetic tissue. The shorter wavelength UV source also showed excellent excitation of indo-1, a probe that is not compatible with NUVLD 375 nm sources. In summary, a 320 nm laser module made a suitable substitute for conventional 355 nm sources. This laser technology is available in a smaller form factor than current 355 nm units, making it useful for small cytometers with space constraints. © 2017 International Society for Advancement of Cytometry. © 2017 International Society for Advancement of Cytometry.

Band gap and conductivity variations of ZnO nano structured thin films annealed under Vacuum

NASA Astrophysics Data System (ADS)

Vattappalam, Sunil C.; Thomas, Deepu; T, Raju Mathew; Augustine, Simon; Mathew, Sunny

2015-02-01

Zinc Oxide thin films were prepared by Successive Ionic layer adsorption and reaction technique(SILAR). The samples were annealed under vacuum and conductivity of the samples were taken at different temperatures. UV Spectrograph of the samples were taken and the band gap of each sample was found from the data. All the results were compared with that of the sample annealed under air. It was observed that the band gap decreases and concequently conductivity of the samples increases when the samples are annealed under vacuum.

Ultrafast pre-breakdown dynamics in Al₂O₃SiO₂ reflector by femtosecond UV laser spectroscopy.

PubMed

Du, Juan; Li, Zehan; Xue, Bing; Kobayashi, Takayoshi; Han, Dongjia; Zhao, Yuanan; Leng, Yuxin

2015-06-29

Ultrafast carrier dynamics in Al2O3/SiO2 high reflectors has been investigated by UV femtosecond laser. It is identified by laser spectroscopy that, the carrier dynamics contributed from the front few layers of Al2O3 play a dominating role in the initial laser-induced damage of the UV reflector. Time-resolved reflection decrease after the UV excitation is observed, and conduction electrons is found to relaxed to a mid-gap defect state locating about one photon below the conduction band . To interpret the laser induced carrier dynamics further, a theoretical model including electrons relaxation to a mid-gap state is built, and agrees very well with the experimental results.. To the best of our knowledge, this is the first study on the pre-damage dynamics in UV high reflector induced by femtosecond UV laser.

Precision Control Module For UV Laser 3D Micromachining

NASA Astrophysics Data System (ADS)

Wu, Wen-Hong; Hung, Min-Wei; Chang, Chun-Li

2011-01-01

UV laser has been widely used in various micromachining such as micro-scribing or patterning processing. At present, most of the semiconductors, LEDs, photovoltaic solar panels and touch panels industries need the UV laser processing system. However, most of the UV laser processing applications in the industries utilize two dimensional (2D) plane processing. And there are tremendous business opportunities that can be developed, such as three dimensional (3D) structures of micro-electromechanical (MEMS) sensor or the precision depth control of indium tin oxide (ITO) thin films edge insulation in touch panels. This research aims to develop a UV laser 3D micromachining module that can create the novel applications for industries. By special designed beam expender in optical system, the focal point of UV laser can be adjusted quickly and accurately through the optical path control lens of laser beam expender optical system. Furthermore, the integrated software for galvanometric scanner and focal point adjustment mechanism is developed as well, so as to carry out the precise 3D microstructure machining.

Demonstration of miniaturized 20mW CW 280nm and 266nm solid-state UV laser sources

NASA Astrophysics Data System (ADS)

Landru, Nicolas; Georges, Thierry; Beaurepaire, Julien; Le Guen, Bruno; Le Bail, Guy

2015-02-01

Visible 561 nm and 532 nm laser emissions from 14-mm long DPSS monolithic cavities are frequency converted to deep UV 280 nm and 266 nm in 16-mm long monolithic external cavities. Wavelength conversion is fully insensitive to mechanical vibrations and the whole UV laser sources fit in a miniaturized housing. More than 20 mW deep UV laser emission is demonstrated with high power stability, low noise and good beam quality. Aging tests are in progress but long lifetimes are expected thanks to the cavity design. Protein detection and deep UV resonant Raman spectroscopy are applications that could benefit from these laser sources.

Near-ultraviolet laser diodes for brilliant ultraviolet fluorophore excitation.

PubMed

Telford, William G

2015-12-01

Although multiple lasers are now standard equipment on most modern flow cytometers, ultraviolet (UV) lasers (325-365 nm) remain an uncommon excitation source for cytometry. Nd:YVO4 frequency-tripled diode pumped solid-state lasers emitting at 355 nm are now the primary means of providing UV excitation on multilaser flow cytometers. Although a number of UV excited fluorochromes are available for flow cytometry, the cost of solid-state UV lasers remains prohibitively high, limiting their use to all but the most sophisticated multilaser instruments. The recent introduction of the brilliant ultraviolet (BUV) series of fluorochromes for cell surface marker detection and their importance in increasing the number of simultaneous parameters for high-dimensional analysis has increased the urgency of including UV sources in cytometer designs; however, these lasers remain expensive. Near-UV laser diodes (NUVLDs), a direct diode laser source emitting in the 370-380 nm range, have been previously validated for flow cytometric analysis of most UV-excited probes, including quantum nanocrystals, the Hoechst dyes, and 4',6-diamidino-2-phenylindole. However, they remain a little-used laser source for cytometry, despite their significantly lower cost. In this study, the ability of NUVLDs to excite the BUV dyes was assessed, along with their compatibility with simultaneous brilliant violet (BV) labeling. A NUVLD emitting at 375 nm was found to excite most of the available BUV dyes at least as well as a UV 355 nm source. This slightly longer wavelength did produce some unwanted excitation of BV dyes, but at sufficiently low levels to require minimal additional compensation. NUVLDs are compact, relatively inexpensive lasers that have higher power levels than the newest generation of small 355 nm lasers. They can, therefore, make a useful, cost-effective substitute for traditional UV lasers in multicolor analysis involving the BUV and BV dyes. Published 2015 Wiley Periodicals Inc. on behalf of ISAC.

Catalyst-free growth of ZnO nanowires on ITO seed/glass by thermal evaporation method: Effects of ITO seed layer thickness

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alsultany, Forat H., E-mail: foratusm@gmail.com; Ahmed, Naser M.; Hassan, Z.

A seed/catalyst-free growth of ZnO nanowires (ZnO-NWs) on a glass substrate were successfully fabricated using thermal evaporation technique. These nanowires were grown on ITO seed layers of different thicknesses of 25 and 75 nm, which were deposited on glass substrates by radio frequency (RF) magnetron sputtering. Prior to synthesized ITO nanowires, the sputtered ITO seeds were annealed using the continuous wave (CW) CO2 laser at 450 °C in air for 15 min. The effect of seed layer thickness on the morphological, structural, and optical properties of ZnO-NWs were systematically investigated by X-ray diffraction (XRD), field emission scanning electron microscopy (FESEM),more » and UV-Vis spectrophotometer.« less

Comparative study on crystallization characteristics of amorphous Ge2Sb2Te5 films by an ultraviolet laser radiation and isothermal annealing

NASA Astrophysics Data System (ADS)

Zhu, Z.; Liu, F. R.; Wang, Z. M.; Fan, Z. K.; Liu, F.; Sun, N. X.

2015-04-01

A comparative study on crystallization characteristics of amorphous Ge2Sb2Te5 (GST) films induced by an ultraviolet pulse laser and isothermal annealing was carried out by using transmission electron microscopy (TEM) and Raman scattering. TEM observations showed that the mean grain size induced by a pulse laser was in the nanoscale. A more complete crystallization in the 50 nm thick GST film was obtained which was ascribed to the effect of thermal convection produced in a thinner GST film, however, when the film thickness was over 70 nm, no significant decrease in the mean grain size was found because of the effect of heating mode, where a surface heat source by the ultraviolet laser radiation caused a quick temperature drop. The body heating mode at the isothermal annealing condition made the mean grain size increase remarkably with the increase of film thickness, which could be up to the submicron scale, relative to the size of film thickness. The Raman spectrum analysis showed that a red shift was observed in laser induced Ge2Sb2Te5 films as compared to the isothermal annealing samples, which was caused by the resultant stress of the thermal stress and phase transformation stress.

Low-Temperature UV-Assisted Fabrication of Metal Oxide Thin Film Transistor

NASA Astrophysics Data System (ADS)

Zhu, Shuanglin

Solution processed metal oxide semiconductors have attracted intensive attention in the last several decades and have emerged as a promising candidate for the application of thin film transistor (TFT) due to their nature of transparency, flexibility, high mobility, simple processing technique and potential low manufacturing cost. However, metal oxide thin film fabricated by solution process usually requires a high temperature (over 300 °C), which is above the glass transition temperature of some conventional polymer substrates. In order to fabricate the flexible electronic device on polymer substrates, it is necessary to find a facile approach to lower the fabrication temperature and minimize defects in metal oxide thin film. In this thesis, the electrical properties dependency on temperature is discussed and an UV-assisted annealing method incorporating Deep ultraviolet (DUV)-decomposable additives is demonstrated, which can effectively improve electrical properties solution processed metal oxide semiconductors processed at temperature as low as 220 °C. By studying a widely used indium oxide (In2O3) TFT as a model system, it is worth noted that compared with the sample without UV treatment, the linear mobility and saturation mobility of UV-annealing sample are improved by 56% and 40% respectively. Meanwhile, the subthreshold swing is decreased by 32%, indicating UV-treated device could turn on and off more efficiently. In addition to pure In2O3 film, the similar phenomena have also been observed in indium oxide based Indium-Gallium-Zinc Oxide (IGZO) system. These finding presented in this thesis suggest that the UV assisted annealing process open a new route to fabricate high performance metal oxide semiconductors under low temperatures.

Analysis of UV-excited fluorochromes by flow cytometry using near-ultraviolet laser diodes.

PubMed

Telford, William G

2004-09-01

Violet laser diodes have become common and reliable laser sources for benchtop flow cytometers. While these lasers are very useful for a variety of violet and some ultraviolet-excited fluorochromes (e.g., DAPI), they do not efficiently excite most UV-stimulated probes. In this study, the next generation of InGaN near-UV laser diodes (NUVLDs) emitting in the 370-375-nm range have been evaluated as laser sources for cuvette-based flow cytometers. Several NUVLDs, ranging in wavelength from 370 to 374 nm and in power level from 1.5 to 10 mW, were mounted on a BD Biosciences LSR II and evaluated for their ability to excite cells labeled with the UV DNA binding dye DAPI, several UV phenotyping fluorochromes (including Alexa Fluor 350, Marina Blue, and quantum dots), and the fluorescent calcium chelator indo-1. NUVLDs at the 8-10-mW power range gave detection sensitivity levels comparable to more powerful solid-state and ion laser sources, using low-fluorescence microsphere beads as measurement standards. NUVLDs at all tested power levels allowed extremely high-resolution DAPI cell cycle analysis, and sources in the 8-10-mW power range excited Alexa Fluor 350, Marina Blue, and a variety of quantum dots at virtually the same signal-to-noise ratios as more powerful UV sources. These evaluations indicate that near-UV laser diodes installed on a cuvette-based flow cytometer performed nearly as well as more powerful solid-state UV lasers on the same instrumentation, and comparably to more powerful ion lasers on a jet-in-air system, and. Despite their limited power, integration of these small and inexpensive lasers into benchtop flow cytometers should allow the use of flow cytometric applications requiring UV excitation on a wide variety of instruments. Copyright 2004 Wiley-Liss, Inc.

EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA Annealing of induced absorption in quartz glasses by ArF laser radiation

NASA Astrophysics Data System (ADS)

Sergeev, P. B.; Sergeev, A. P.

2010-11-01

Annealing of individual bands of electron-beam-induced absorption (IA) in the region of 150 — 400 nm in KS-4V, KU-1, and Corning 7980 (ArF Grade) quartz glasses by ArF laser radiation is studied. It is shown that the phototransformation of the IA spectra occurs mainly due to a significant decrease in the amplitudes of bands at λ = 183.5, 213, and 260 nm. The role played by interstitial oxygen, hydrogen, and chlorine in the formation and relaxation of glass defects is considered.

Synthesis of Water-Soluble Antimony Sulfide Quantum Dots and Their Photoelectric Properties

NASA Astrophysics Data System (ADS)

Zhu, Jiang; Yan, Xuelian; Cheng, Jiang

2018-01-01

Antimony sulfide (Sb2S3) has been applied in photoelectric devices for a long time. However, there was lack of information about Sb2S3 quantum dots (QDs) because of the synthesis difficulties. To fill this vacancy, water-soluble Sb2S3 QDs were prepared by hot injection using hexadecyltrimethylammonium bromide (CTAB) and sodium dodecyl sulfate (SDS) mixture as anionic-cationic surfactant, alkanol amide (DEA) as stabilizer, and ethylenediaminetetraacetic acid (EDTA) as dispersant. Photoelectric properties including absorbing and emission were characterized by UV-Vis-IR spectrophotometer and photoluminescence (PL) spectroscopic technique. An intensive PL emission at 880 nm was found, indicating Sb2S3 QDs have good prospects in near-infrared LED and near-infrared laser application. Sb2S3 QD thin films were prepared by self-assembly growth and then annealed in argon or selenium vapor. Their band gaps ( E g s) were calculated according to transmittance spectra. The E g of Sb2S3 QD thin film has been found to be tunable from 1.82 to 1.09 eV via annealing or selenylation, demonstrating the good prospects in photovoltaic application.

Excimer laser annealing to fabricate low cost solar cells

NASA Technical Reports Server (NTRS)

1984-01-01

The objective is to show whether or not pulsed excimer laser annealing (PELA) of ion-implanted junctions is a cost effective replacement for diffused junctions in fabricating crystalline silicon solar cells. The preliminary economic analysis completed shows that the use of PELA to fabricate both the front junction and back surface field (BSF) would cost approximately 35 cents per peak watt (Wp), compared to a cost of 15 cents/Wp for diffusion, aluminum BSF and an extra cleaning step in the baseline process. The cost advantage of the PELA process depends on improving the average cell efficiency from 14% to 16%, which would lower the overall cost of the module by about 15 cents/Wp. An optimized PELA process compatible with commercial production is to be developed, and increased cell efficiency with sufficient product for adequate statistical analysis demonstrated. An excimer laser annealing station was set-up and made operational. The first experiment used 248 nm radiation to anneal phosphorus implants in polished and texture-etched silicon.

Impact of thermal annealing on optical properties of vacuum evaporated CdTe thin films for solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chander, Subhash, E-mail: sckhurdra@gmail.com; Purohit, A.; Lal, C.

2016-05-06

In this paper, the impact of thermal annealing on optical properties of cadmium telluride (CdTe) thin films is investigated. The films of thickness 650 nm were deposited on thoroughly cleaned glass substrate employing vacuum evaporation followed by thermal annealing in the temperature range 250-450 °C. The as-deposited and annealed films were characterized using UV-Vis spectrophotometer. The optical band gap is found to be decreased from 1.88 eV to 1.48 eV with thermal annealing. The refractive index is found to be in the range 2.73-2.92 and observed to increase with annealing treatment. The experimental results reveal that the thermal annealing plays anmore » important role to enhance the optical properties of CdTe thin films and annealed films may be used as absorber layer in CdTe/CdS solar cells.« less

Integrated ultraviolet and tunable mid-infrared laser source for analyses of proteins

NASA Astrophysics Data System (ADS)

Hazama, Hisanao; Takatani, Yoshiaki; Awazu, Kunio

2007-02-01

Mass spectrometry using matrix-assisted laser desorption/ionization (MALDI) technique is one of the most widely used method to analyze proteins in biological research fields. However, it is difficult to analyze insoluble proteins which have important roles in researches on disease mechanisms or in developments of drugs by using ultraviolet (UV) lasers which have commonly been used for MALDI. Recently, a significant improvement in MALDI process of insoluble proteins using a combination of a UV nitrogen laser and a tunable mid-infrared (MIR) free electron laser (FEL) was reported. Since the FEL is a very large and expensive equipment, we have developed a tabletop laser source which can generate both UV and tunable MIR lasers. A tunable MIR laser (5.5-10 μm) was obtained by difference frequency generation (DFG) between a Nd:YAG and a tunable Cr:forsterite lasers using two AgGaS II crystals. The MIR laser can generate pulses with an energy of up to 1.4 mJ at a repetition rate of 10 Hz. A UV laser was obtained by third harmonic generation of a Nd:YAG laser splitted from that used for DFG. A time interval between the UV and the MIR laser pulses can be adjusted with a variable optical delay.

Low-temperature diffusion assisted by femtosecond laser-induced modifications at Ni/SiC interface

NASA Astrophysics Data System (ADS)

Okada, Tatsuya; Tomita, Takuro; Ueki, Tomoyuki; Hashimoto, Takuya; Kawakami, Hiroki; Fuchikami, Yuki; Hisazawa, Hiromu; Tanaka, Yasuhiro

2018-01-01

We investigated low-temperature diffusion at the Ni/SiC interface with the assistance of femtosecond laser-induced modifications. Cross sections of the laser-irradiated lines of two different pulse energies — 0.84 and 0.60 J/cm2 in laser fluence — were compared before and after annealing at 673 K. At the laser fluence of 0.60 J/cm2, a single flat Ni-based particle was formed at the interface after annealing. The SiC crystal under the particle was defect-free. The present results suggest the potential application of femtosecond laser-induced modifications to the low-temperature fabrication of contacts at the interface without introducing crystal defects, e.g., dislocations and stacking faults, in SiC.

Enhanced off-resonance magnetoelectric response in laser annealed PZT thick film grown on magnetostrictive amorphous metal substrate

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palneedi, Haribabu; Functional Ceramics Group, Korea Institute of Materials Science; Maurya, Deepam

2015-07-06

A highly dense, 4 μm-thick Pb(Zr,Ti)O{sub 3} (PZT) film is deposited on amorphous magnetostrictive Metglas foil (FeBSi) by granule spray in vacuum process at room temperature, followed by its localized annealing with a continuous-wave 560 nm ytterbium fiber laser radiation. This longer-wavelength laser radiation is able to anneal the whole of thick PZT film layer without any deteriorative effects, such as chemical reaction and/or atomic diffusion, at the interface and crystallization of amorphous Metglas substrate. Greatly enhanced dielectric and ferroelectric properties of the annealed PZT are attributed to its better crystallinity and grain growth induced by laser irradiation. As a result, amore » colossal off-resonance magnetoelectric (ME) voltage coefficient that is two orders of magnitude larger than previously reported output from PZT/Metglas film-composites is achieved. The present work addresses the problems involved in the fabrication of PZT/Metglas film-composites and opens up emerging possibilities in employing piezoelectric materials with low thermal budget substrates (suitable for integrated electronics) and designing laminate composites for ME based devices.« less

Thermal relaxation behavior of residual stress in laser hardened 17-4PH steel after shot peening treatment

NASA Astrophysics Data System (ADS)

Wang, Zhou; Chen, Yanhua; Jiang, Chuanhai

2011-09-01

In order to investigate the residual stress relaxations of shot peened layer, isothermal annealing treatments were carried out on tempered and laser hardened 17-4PH steel after shot peening with different temperatures from 300 °C to 600 °C. The results showed that the residual stresses were relaxed in the whole deformation layer especially under higher temperature. The maximum rates of stress relaxation took place at the initial stage of annealing process in all conditions. The relaxation process during isothermal annealing could be described by Zener-Wert-Avrami function. The thermal stability of residual stress in tempered 17-4PH was higher than that in laser hardened 17-4PH as well as that in α-iron, which was due to the pinning effects of ɛ-Cu precipitates on the dislocation movement. As massive ɛ-Cu precipitates formed in the temperature about 480 °C, the activation enthalpies for stress relaxation in laser hardened 17-4PH were the same as that in tempered 17-4PH in the conditions of isothermal annealing temperatures of 500 °C and 600 °C.

Laser treatment of plasma-hydrogenated silicon wafers for thin layer exfoliation

NASA Astrophysics Data System (ADS)

Ghica, Corneliu; Nistor, Leona Cristina; Teodorescu, Valentin Serban; Maraloiu, Adrian; Vizireanu, Sorin; Scarisoreanu, Nae Doinel; Dinescu, Maria

2011-03-01

We have studied by transmission electron microscopy the microstructural effects induced by pulsed laser annealing in comparison with thermal treatments of RF plasma hydrogenated Si wafers aiming for further application in the smart-cut procedure. While thermal annealing mainly produces a slight decrease of the density of plasma-induced planar defects and an increase of the size and number of plasma-induced nanocavities in the Si matrix, pulsed laser annealing of RF plasma hydrogenated Si wafers with a 355 nm wavelength radiation results in both the healing of defects adjacent to the wafer surface and the formation of a well defined layer of nanometric cavities at a depth of 25-50 nm. In this way, a controlled fracture of single crystal layers of Si thinner than 50 nm is favored.

Investigation of optical fibers for gas-phase, ultraviolet laser-induced-fluorescence (UV-LIF) spectroscopy.

PubMed

Hsu, Paul S; Kulatilaka, Waruna D; Jiang, Naibo; Gord, James R; Roy, Sukesh

2012-06-20

We investigate the feasibility of transmitting high-power, ultraviolet (UV) laser pulses through long optical fibers for laser-induced-fluorescence (LIF) spectroscopy of the hydroxyl radical (OH) and nitric oxide (NO) in reacting and non-reacting flows. The fundamental transmission characteristics of nanosecond (ns)-duration laser pulses are studied at wavelengths of 283 nm (OH excitation) and 226 nm (NO excitation) for state-of-the-art, commercial UV-grade fibers. It is verified experimentally that selected fibers are capable of transmitting sufficient UV pulse energy for single-laser-shot LIF measurements. The homogeneous output-beam profile resulting from propagation through a long multimode fiber is ideal for two-dimensional planar-LIF (PLIF) imaging. A fiber-coupled UV-LIF system employing a 6 m long launch fiber is developed for probing OH and NO. Single-laser-shot OH- and NO-PLIF images are obtained in a premixed flame and in a room-temperature NO-seeded N(2) jet, respectively. Effects on LIF excitation lineshapes resulting from delivering intense UV laser pulses through long fibers are also investigated. Proof-of-concept measurements demonstrated in the current work show significant promise for fiber-coupled UV-LIF spectroscopy in harsh diagnostic environments such as gas-turbine test beds.

UV-luminescent MgZnO semiconductor alloys: nanostructure and optical properties

DOE PAGES

Thapa, Dinesh; Huso, Jesse; Miklos, Kevin; ...

2016-10-24

MgZnO is emerging as a vital semiconductor-alloy system with desirable optical properties that can span a large range of the UV spectrum. Due to its benign chemical character, MgZnO is considered to be an environmentally friendly material. This paper presents studies on annealing as a useful and straightforward approach for the enhancement of the optical and crystal quality of Mg 0.17Zn 0.83O nanocrystalline films grown via DC sputtering. The alloys were studied via several imaging and optical techniques. It was found that high-temperature annealing, ~900 °C, in Argon atmosphere, significantly improves the solubility of the alloy. This temperature range ismore » consistent with the thermal diffusion temperature of Mg needed for the creation of a soluble alloy. Moreover, the annealing process was found to minimize the undesirable visible luminescence, attributed to Mg and Zn interstitials, while significantly enhancing the bandgap sharpness and the efficiency of the UV-luminescence at ~3.5 eV. The analysis indicated that these optical attributes were achieved due to the combined effects of good solubility, an improved morphology, and a reduction of native defects. The annealing was also proven to be beneficial for the reduction of the compressive stress in the alloy: a relaxation ~1.8 GPa was calculated via Raman scattering. The inherent stress was inferred to originate mainly from the granular morphology of the alloys.« less

Ultrafast lasers for precise and corrosion free marking on chirurgical steels

NASA Astrophysics Data System (ADS)

Neugebauer, Christoph; Aalderink, Dennis; Maurer, Erich; Faisst, Birgit; Budnicki, Aleksander

2017-02-01

The unique properties of ultrashort laser pulses and the decrease of invest pave the way to numerous novel applications. Even in the very price sensitive field of laser marking, ultrashort laser can compete due to a new cost structure and remarkable properties of the marking results. In this study we concentrated on industrial marking of medical equipment by using IR ultrashort lasers and compared the results with common marking laser systems. We demonstrate the benefits of ultrashort lasers marking on chirurgical devices, observing the influence of pulse energy, pulse duration, scanning velocity in respect to the visibility, corrosion resistance and long term durability under clinical conditions. Nowadays many parts and products are marked for the purpose of identification and traceability. One kind of laser marking is the well known annealing of stainless steel by nanosecond marking lasers. When annealing occurs a colored oxide layer grows due to the local heating of the material surface. Compared to the raw material, the annealed marking shows increased corrosion sensitivity. Regarding the traceability, the poor durability of the ns marking resulting in contrast reduction and the corrosion susceptibility are a huge problem. Therefore three different laser sources with ns-psfs pulse duration were observed. The focus rests on the realization of parameter studies (various lasers) and their effect on the corrosion and passivation behavior. Furthermore analysis of the oxide layers by use of EDX and XRD were performed to obtain further information on the composition and structure of the markings.

Studies on the mechanism of printing film-coated tablets containing titanium dioxide in the film by using UV laser irradiation.

PubMed

Kato, Yoshiteru; Nakashima, Yasuhiko; Shino, Naoki; Sasaki, Koichi; Hosokawa, Akihiro; Ishihara, Hiroshi

2010-04-01

The purpose of this article is to study a detailed mechanism of printing when film-coated tablets were irradiated by UV laser at a wavelength of 355 nm. Hydroxypropylmethylcellulose (HPMC) film containing titanium dioxide (TiO(2)) and the film not containing TiO(2) and TiO(2) powder were lirradiated by the UV laser and estimated by the morphological observation by zoom stereo microscope, thermogravimetric analysis (TGA), total color difference (dE), X-ray powder diffraction (XRD), and dispersive Raman microscopy. In the case of the film containing TiO(2), the film showed a visible change in its color from white to gray by the UV laser irradiation. By zoom stereo microscope, it was found that the entire UV laser-irradiated area was not grayed uniformly, but many black particles, whose diameter was about 2 microm, were observed on the film. When TiO(2) powder was irradiated by the UV laser, a visible change in its color from white to gray was observed similar to the case of the film containing TiO(2). There were many black particles locally in the UV laser-treated TiO(2) powder by the morphological observation, and these black particles, agglomerates of the grayed oxygen-defected TiO(2), were associated with the visible change of the TiO(2). It was found that the film-coated tablets were printed utilizing the formation of the black particles by the agglomeration of the grayed oxygen-defected TiO(2) by the UV laser irradiation.

Characterization of nanocrystalline ZnO:Al films by sol-gel spin coating method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gareso, P. L., E-mail: pgareso@gmail.com; Rauf, N., E-mail: pgareso@gmail.com; Juarlin, E., E-mail: pgareso@gmail.com

2014-09-25

Nanocrystalline ZnO films doped with aluminium by sol-gel spin coating method have been investigated using optical transmittance UV-Vis and X-ray diffraction (X-RD) measurements. ZnO films were prepared using zinc acetate dehydrate (Zn(CH{sub 3}COO){sub 2}@@‡2H{sub 2}O), ethanol, and diethanolamine (DEA) as a starting material, solvent, and stabilizer, respectively. For doped films, AlCl{sub 3} was added to the mixture. The ZnO:Al films were deposited on a transparent conductive oxide (TCO) substrate using spin coating technique at room temperature with a rate of 3000 rpm in 30 sec. The deposited films were annealed at various temperatures from 400°C to 600°C during 60 minutes.more » The transmittance UV-Vis measurement results showed that after annealing at 400°C, the energy band gap profile of nanocrystalline ZnO:Al film was a blue shift. This indicated that the band gap of ZnO:Al increased after annealing due to the increase of crystalline size. As the annealing temperature increased the bandgap energy was a constant. In addition to this, there was a small oscillation occurring after annealing compared to the as–grown samples. In the case of X-RD measurements, the crystalinity of the films were amorphous before annealing, and after annealing the crystalinity became enhance. Also, X-RD results showed that structure of nanocrystalline ZnO:Al films were hexagonal polycrystalline with lattice parameters are a = 3.290 Å and c = 5.2531 Å.« less

Femtosecond UV-laser pulses to unveil protein-protein interactions in living cells.

PubMed

Itri, Francesco; Monti, Daria M; Della Ventura, Bartolomeo; Vinciguerra, Roberto; Chino, Marco; Gesuele, Felice; Lombardi, Angelina; Velotta, Raffaele; Altucci, Carlo; Birolo, Leila; Piccoli, Renata; Arciello, Angela

2016-02-01

A hallmark to decipher bioprocesses is to characterize protein-protein interactions in living cells. To do this, the development of innovative methodologies, which do not alter proteins and their natural environment, is particularly needed. Here, we report a method (LUCK, Laser UV Cross-linKing) to in vivo cross-link proteins by UV-laser irradiation of living cells. Upon irradiation of HeLa cells under controlled conditions, cross-linked products of glyceraldehyde-3-phosphate dehydrogenase (GAPDH) were detected, whose yield was found to be a linear function of the total irradiation energy. We demonstrated that stable dimers of GAPDH were formed through intersubunit cross-linking, as also observed when the pure protein was irradiated by UV-laser in vitro. We proposed a defined patch of aromatic residues located at the enzyme subunit interface as the cross-linking sites involved in dimer formation. Hence, by this technique, UV-laser is able to photofix protein surfaces that come in direct contact. Due to the ultra-short time scale of UV-laser-induced cross-linking, this technique could be extended to weld even transient protein interactions in their native context.

Annealing effects on electrical behavior of gold nanoparticle film: Conversion of ohmic to non-ohmic conductivity

NASA Astrophysics Data System (ADS)

Ebrahimpour, Zeinab; Mansour, Nastaran

2017-02-01

This paper reports on the electrical behavior of self-assembled gold nanoparticle films before and after high-temperature annealing in ambient environment. These films are made by depositing gold nanoparticles from a colloidal solution on glass substrates using centrifuge deposition technique. The current-voltage (I-V) characteristics of these films exhibits ohmic and non-ohmic properties for un-annealed and annealed films respectively. As the annealing time duration increases, the onset of non-ohmic behavior occurs at higher voltages. To understand the underlying mechanisms for the observed electrical conduction behavior in these films and how electrical conduction is effected by film morphology and structural properties before and after annealing, systematic comparative studies based on scanning electron microscopy (SEM), UV-vis absorption spectroscopy and X-ray photoelectron spectroscopy (XPS) have been performed. The morphology of the films shows that the assembled gold nanoparticles are distributed on the substrate in a random way before annealing. After 2 h annealing gold nanoparticles exhibit a higher filling fraction when examined by SEM, which means that they coalesce, upon annealing, with respect to un-annealed films. The UV-vis absorption spectra of the films show that there is a red-shift and broadening in the absorption band for the annealed films. The observed phenomenon is related to the plasmon near-field coupling effect and suggests that the nanoparticle ensembles interspacing has decreased. The structural and crystallinity of the films exhibit amorphous structure before annealing and pure crystalline phases with a preferential growth direction along the (111) plane after annealing. The XPS analysis further suggests the existence of the stable thin oxide layer in the phase of Au2O3 in the annealed films. The I-V characteristics have been described by Simmons' model for tunnel transport through metal-insulator-metal (MIM) junctions. The Fowler-Nordheim (F-N) plots show the transition of the in-plane charge transport mechanism from direct tunneling to field emission in annealed films. Our results suggest that, the formation of a thin layer of Au2O3 , the proximity of the nanoparticles as well as their higher filling fraction are important parameters related with the tunneling process enhancement. The observed non-ohmic conductivity property can make these self-assembled gold nanoparticle films very useful structures in different applications such as sensing, resistors and other nanoelectronic applications.

Photocrosslinking and Photodamage in Protein-Nucleic Acid Systems Resulting from UV and IR Radiation.

NASA Astrophysics Data System (ADS)

Kozub, John Andrew

1995-01-01

Photocrosslinking of protein-nucleic acid complexes with low intensity UV has frequently been used to study biological systems. We have investigated the photochemistry of protein-nucleic acid systems using nanosecond UV pulses from a Nd:YAG-pumped dye laser system, low-intensity continuous UV from a typical germicidal lamp, and high-intensity mid -IR pulses from the Vanderbilt Free Electron Laser. Quantum yields for UV-induced nucleic acid damage from laser pulses and the germicidal lamp were found to be nearly equivalent. We have demonstrated the general applicability of the laser to this technique by successfully crosslinking hnRNP protein to RNA, yeast TATA-binding protein to dsDNA, and gene 32 protein to ssDNA with UV laser pulses. Our results indicate that UV-crosslinking has an intrinsic specificity for nucleic acid sites containing thymidine (or uridine), forcing a distinction between preferred binding sites and favorable crosslinking sites. We have found in each system that protein and nucleic acid photodamage competes with crosslinking, limits the yield, and may interfere with subsequent analysis. The distribution of photoproducts in the gene 32 protein-ssDNA system was investigated as a function of the total dose of UV radiation and the intensity of UV laser pulses. It was found that laser pulses providing up to 50 photons per nucleic acid base induce a linear response from the system; the absolute and relative yields of photoproducts depend only on the total dose of UV and not on the rate of delivery. At higher intensities, the yield of crosslinks per incident photon was reduced. A single pulse at the optimum intensity (about 100-200 photons per nucleic acid base) induced roughly 80% of the maximum attainable yield of crosslinks in this system. The early results of our search for photochemistry induced by Free Electron Laser pulses indicate the potential to induce a unique photoreaction in the gene 32 protein -ssDNA system. The yield is apparently enhanced by simultaneous exposure to UV pulses. Future experiments will test the potential of IR and UV irradiations to increase the specificity for photocrosslinks.

UV laser radiation alters the embryonic protein profile of adrenal-kidney-gonadal complex and gonadal differentiation in the lizard, Calotes Versicolor.

PubMed

Khodnapur, Bharati S; Inamdar, Laxmi S; Nindi, Robertraj S; Math, Shivkumar A; Mulimani, B G; Inamdar, Sanjeev R

2015-02-01

To examine the impact of ultraviolet (UV) laser radiation on the embryos of Calotes versicolor in terms of its effects on the protein profile of the adrenal-kidney-gonadal complex (AKG), sex determination and differentiation, embryonic development and hatching synchrony. The eggs of C. versicolor, during thermo-sensitive period (TSP), were exposed to third harmonic laser pulses at 355 nm from a Q-switched Nd:YAG laser for 180 sec. Subsequent to the exposure they were incubated at the male-producing temperature (MPT) of 25.5 ± 0.5°C. The AKG of hatchlings was subjected to protein analysis by sodium dodecyl sulphate-polyacrylamide gel electrophoresis (SDS-PAGE) and to histology. The UV laser radiation altered the expression of the protein banding pattern in the AKG complex of hatchlings and it also affected the gonadal sex differentiation. SDS-PAGE of AKG of one-day-old hatchlings revealed a total of nine protein bands in the control group whereas UV laser irradiated hatchlings expressed a total of seven protein bands only one of which had the same Rf as a control band. The UV laser treated hatchlings have an ovotestes kind of gonad exhibiting a tendency towards femaleness instead of the typical testes. It is inferred that 355 nm UV laser radiation during TSP induces changes in the expression of proteins as well as their secretions. UV laser radiation had an impact on the gonadal differentiation pathway but no morphological anomalies were noticed.

Influence of pre-annealing of printed silver electrodes on ultrafast laser ablation of short thin-film transistor channels on flexible substrates

NASA Astrophysics Data System (ADS)

Wiig, M. S.; You, C. C.; Brox-Nilsen, C.; Foss, S. E.

2018-02-01

The cutoff frequency and current from an organic thin-film transistor (OTFT) are strongly dependent on the length and to some extent on the uniformity of the transistor channel. Reducing the channel length can improve the OTFT performance with the increase in the current and frequency. Picosecond laser ablation of the printed Ag electrodes, compatible with roll-to-roll fabrication, has been investigated. The ablation threshold was found to be similar for the laser wavelengths tested: 515 nm and 1030 nm. Short transistor channels could be opened both after light annealing at 70 °C and after annealing at 140 °C. The channels in the lightly cured films had a significantly less scale formation, which is critical for avoiding shunts in the device. By moving from bottom electrodes fully defined by printing to the bottom electrodes where the transistor channel is opened by the laser, the channel length could be reduced from 40 μm to less than 5 μm.

High Energy, Single-Mode, All-Solid-State and Tunable UV Laser Transmitter

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Singh, Upendra N.; Hovis, FLoyd

2007-01-01

A high energy, single mode, all solid-state Nd:YAG laser primarily for pumping an UV converter is developed. Greater than 1 J/pulse at 50 HZ PRF and pulse widths around 22 ns have been demonstrated. Higher energy, greater efficiency may be possible. Refinements are known and practical to implement. Technology Demonstration of a highly efficient, high-pulse-energy, single mode UV wavelength generation using flash lamp pumped laser has been achieved. Greater than 90% pump depletion is observed. 190 mJ extra-cavity SFG; IR to UV efficiency > 21% (> 27% for 1 mJ seed). 160 mJ intra-cavity SFG; IR to UV efficiency up to 24% Fluence < 1 J/sq cm for most beams. The pump beam quality of the Nd:YAG pump laser is being refined to match or exceed the above UV converter results. Currently the Nd:YAG pump laser development is a technology demonstration. System can be engineered for compact packaging.

Recent Progress Made in the Development of High-Energy UV Transmitter

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Singh, Upendra N.; Armstrong, Darrell J.

2007-01-01

In this paper, the status of an all-solid-state UV converter development for ozone sensing applications is discussed. A high energy Nd:YAG laser for pumping the UV converter arrangement was recently reported. The pump is an all-solid-state, single longitudinal mode, and conductively cooled Nd:YAG laser operating at 1064 nm wavelength. Currently, this pump laser provides an output pulse energy of greater than 1J/pulse at 50 Hz PRF and a pulsewidth of 22 ns with an electrical-to-optical system efficiency of greater than 7% and a M(sup 2) value of approx. 2. The spatial profile of the output beam is a rectangular super Gaussian. This Nd:YAG pump laser has been developed to pump the nonlinear optics based UV converter arrangement to generate 320 nm and 308 nm wavelengths by means of 532 nm wavelength. Previously, this UV converter arrangement has demonstrated IR-to-UV conversion efficiency of 24% using a flash lamp pumped laser providing a round, flat top spatial profile. Recently, the UV converter was assembled and tested at NASA LaRC for pumping with the diode pumped Nd:YAG laser. With current spatial profile, the UV converter was made operational. Current efforts to maximize the nonlinear conversion efficiency by refining its spatial profile to match RISTRA OPO requirements are progressing.

UV Resonant Raman Spectrometer with Multi-Line Laser Excitation

NASA Technical Reports Server (NTRS)

Lambert, James L.; Kohel, James M.; Kirby, James P.; Morookian, John Michael; Pelletier, Michael J.

2013-01-01

A Raman spectrometer employs two or more UV (ultraviolet) laser wavel engths to generate UV resonant Raman (UVRR) spectra in organic sampl es. Resonant Raman scattering results when the laser excitation is n ear an electronic transition of a molecule, and the enhancement of R aman signals can be several orders of magnitude. In addition, the Ra man cross-section is inversely proportional to the fourth power of t he wavelength, so the UV Raman emission is increased by another fact or of 16, or greater, over visible Raman emissions. The Raman-scatter ed light is collected using a high-resolution broadband spectrograph . Further suppression of the Rayleigh-scattered laser light is provi ded by custom UV notch filters.

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu

2017-05-01

The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20 mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2 cm2 V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

Reduction in number of crystal defects in a p+Si diffusion layer by germanium and boron cryogenic implantation combined with sub-melt laser spike annealing

NASA Astrophysics Data System (ADS)

Murakoshi, Atsushi; Harada, Tsubasa; Miyano, Kiyotaka; Harakawa, Hideaki; Aoyama, Tomonori; Yamashita, Hirofumi; Kohyama, Yusuke

2017-09-01

To reduce the number of crystal defects in a p+Si diffusion layer by a low-thermal-budget annealing process, we have examined crystal recovery in the amorphous layer formed by the cryogenic implantation of germanium and boron combined with sub-melt laser spike annealing (LSA). The cryogenic implantation at -150 °C is very effective in suppressing vacancy clustering, which is advantageous for rapid crystal recovery during annealing. The crystallinity after LSA is shown to be very high and comparable to that after rapid thermal annealing (RTA) owing to the cryogenic implantation, although LSA is a low-thermal-budget annealing process that can suppress boron diffusion effectively. It is also shown that in the p+Si diffusion layer, there is high contact resistance due to the incomplete formation of a metal silicide contact, which originates from insufficient outdiffusion of surface contaminants such as fluorine. To widely utilize the marked reduction in the number of crystal defects, sufficient removal of surface contaminants will be required in the low-thermal-budget process.

Effect of Annealing Treatments on the Microstructure, Mechanical Properties and Corrosion Behavior of Direct Metal Laser Sintered Ti-6Al-4V

NASA Astrophysics Data System (ADS)

Xu, Yangzi; Lu, Yuan; Sundberg, Kristin L.; Liang, Jianyu; Sisson, Richard D.

2017-05-01

An experimental investigation on the effects of post-annealing treatments on the microstructure, mechanical properties and corrosion behavior of direct metal laser sintered Ti-6Al-4V alloys has been conducted. The microstructure and phase evolution as affected by annealing treatment temperature were examined through scanning electron microscopy and x-ray diffraction. The tensile properties and Vickers hardness were measured and compared to the commercial Grade 5 Ti-6Al-4V alloy. Corrosion behavior of the parts was analyzed electrochemically in simulated body fluid at 37 °C. It was found out that the as-printed parts mainly composed of non-equilibrium α' phase. Annealing treatment allowed the transformation from α' to α phase and the development of β phase. The tensile test results indicated that post-annealing treatment could improve the ductility and decrease the strength. The as-printed Ti-6Al-4V part exhibits inferior corrosion resistance compared to the commercial alloy, and post-annealing treatment can reduce its susceptibility to corrosion by reducing the two-phase interface area.

Influence of annealing temperature on structural and magnetic properties of pulsed laser-deposited YIG films on SiO2 substrate

NASA Astrophysics Data System (ADS)

Nag, Jadupati; Ray, Nirat

2018-05-01

Yttrium Iron Garnet (Y3Fe5O12) was synthesized by solid state/ceramic process. Thin films of YIG were deposited on SiO2 substrate at room temperature(RT) and at substrate temperature (Ts) 700 °C using pulsed laser deposition (PLD) technique. RT deposited thin films are amorphous in nature and non-magnetic. After annealing at temperature 800 ° RT deposited thin films showed X-ray peaks as well as the magnetic order. Magnetic ordering is enhanced by annealing temperature(Ta ≥ 750 °C) and resulted good quality of films with high magnetization value.

Information storage medium and method of recording and retrieving information thereon

DOEpatents

Marchant, D. D.; Begej, Stefan

1986-01-01

Information storage medium comprising a semiconductor doped with first and second impurities or dopants. Preferably, one of the impurities is introduced by ion implantation. Conductive electrodes are photolithographically formed on the surface of the medium. Information is recorded on the medium by selectively applying a focused laser beam to discrete regions of the medium surface so as to anneal discrete regions of the medium containing lattice defects introduced by the ion-implanted impurity. Information is retrieved from the storage medium by applying a focused laser beam to annealed and non-annealed regions so as to produce a photovoltaic signal at each region.

Synthesis of embedded titanium dioxide nanoparticles by oxygen ion implantation in titanium films

NASA Astrophysics Data System (ADS)

Rukade, Deepti. A.; Desai, C. A.; Kulkarni, Nilesh; Tribedi, L. C.; Bhattacharyya, Varsha

2013-02-01

Thin films of titanium of 100nm thickness are deposited on fused silica substrates. These films are implanted by oxygen ions with implantation energy of 60keV obtained from ECR based highly charged ion accelerator. The implanted films are later annealed in a tube furnace to establish nanophase formation. The post implanted annealed films are characterized by UV-Visible Spectroscopy and Glancing Angle X-ray Diffraction technique (GAXRD). The phase formed and particle size is determined by GAXRD. Nanoparticle formation is confirmed by the UV-VIS spectroscopic analysis that shows quantum size effects in the form of a blue shift in the band-gap energy of titanium-oxide.

UV diode-pumped solid state laser for medical applications

NASA Astrophysics Data System (ADS)

Apollonov, Victor V.; Konstantinov, K. V.; Sirotkin, A. A.

1999-07-01

A compact, solid-state, high-efficiency, and safe UV laser medical system with optical fiber output was created for treatment of destructive forms of pulmonary tuberculosis. A frequency-quadruped quasi-CW Nd:YVO4 laser system pumped by laser-diode array is investigated with various resonator configurations. A longitudinal end-pumping scheme was used in a compact acousto-optical Q-switched laser for producing stable pulses of UV radiation at the repetition frequency 10-20 kHz and the duration 7-10 ns with the fiber-guide output power exceeding 10 mW.

Intense excitation source of blue-green laser

NASA Astrophysics Data System (ADS)

Han, Kwang S.

1986-10-01

An intense and efficient source for blue green laser useful for the space-based satellite laser applications, underwater strategic communication, and measurement of ocean bottom profile is being developed. The source in use, the hypocycloidal pinch plasma (HCP), and the dense plasma focus (DPF) can produce intense uv photons (200 to 400nm) which match the absorption spectra of both near UV and blue green dye lasers (300 to 400nm). As a result of optimization of the DPF light at 355nm, the blue green dye (LD490) laser output exceeding 4mJ was obtained at the best cavity tunning of the laser system. With the HCP pumped system a significant enhancement of the blue green laser outputs with dye LD490 and coumarin 503 has been achieved through the spectrum conversion of the pumping light by mixing a converter dye BBQ. The maximum increase of laser output with the dye mixture of LD490+BBQ and coumarin 503+BBQ was greater than 80%. In addition, the untunned near UV lasers were also obtained. The near UV laser output energy of P-terphenyl dye was 0.5mJ at lambda sub C=337nm with the bandwidth of 3n m for the pulse duration of 0.2us. Another near UV laser output energy obtained with BBQ dye was 25 mJ at lambda sub C=383nm with the bandwidth of 3nm for the pulse duration of 0.2us. Another near UV laser output energy obtained with BBQ dye was 25 mJ at lambda sub C=383nm with the bandwidth of 3nm for the pulse duration of 0.2microsec.

Pulsed-Laser Crystallization of Ferroelectric/Piezoelectric Oxide Thin Films

NASA Astrophysics Data System (ADS)

Rajashekhar, Adarsh

Integration of ferroelectric/piezoelectric thin films, such as those of lead zirconate titanate (PZT), with temperature sensitive substrates (complementary metal oxide semiconductors (CMOS), or polymers) would benefit from growth at substrate temperatures below 400°C. However, high temperatures are usually required for obtaining good quality PZT films via conventional routes like rapid thermal processing (>550°C). Those conditions are not compatible either with polymer substrates or completed CMOS circuits and dictate exploration of alternative methods to realize integration with such substrates. In part of this work, factors influencing KrF excimer laser induced crystallization of amorphous sputtered Pb(Zr0.30Ti0.70)O3 thin films at substrate temperatures < 215°C were investigated. (111) Pt/Si substrates were utilized to understand the process window. Laser energy densities studied were in the range 35 - 85 mJ/cm2. The Pb content in the films was varied via the Ar gas pressure (in the range 5 mTorr - 9 mTorr) during sputtering of amorphous films. It was seen that a higher Pb content in the asdeposited films aided nucleation of the perovskite phase. Ozone-containing ambients (10% O3/90% O2) during the annealing promoted the formation of the metastable Pb-rich pyrochlore/fluorite phase, while annealing in pure oxygen produced the perovskite phase at relatively lower annealing laser energy densities. Heterogeneous nucleation from the substrate is favored on utilizing a layer-by-layer growth and crystallization process. Films were also grown on polymers using this method. Ferroelectric switching was demonstrated, but extensive process optimization would be needed to reduce leakage and porosity. Real time laser annealing during growth allows for scaling of the layer-by-layer growth process. A pulsed laser deposition system with in situ laser annealing was thus designed, built, and utilized to grow Pb(Zr 0.52Ti0.48)O3 thin films on a laser crystallized Pb(Zr0.20Ti0.80)O3 seed layer, at a temperature of 370°C. Polycrystalline 1.1 microm thick films exhibited columnar grains with small grain sizes ( 30 nm). The films showed well-saturated hysteresis loops (with a remanent polarization of 25 microC/cm2, and a coercive field of 50 kV/cm) and exhibited loss tangents <2.5% with a permittivity of 730. Film orientation could be controlled via the substrate choice; {111} Pb(Zr0.52Ti0.48)O3 films were grown on oriented (111) Pb(Zr0.30Ti0.70)O3 sol-gel seed layers, while epitaxial {001} films were prepared on (100) SrTiO 3 single crystals. In order to study the microstructure evolution in these films, in situ pulsed-laser annealing was used to grow crystalline lead zirconate titanate (PbZr0.52Ti0.48O3) thin films at a substrate temperature of 370°C on PbZr0.30Ti 0.70O3-buffered platinized silicon substrates. Transmission electron microscopy (TEM) analysis indicated that the films were well crystallized into columnar grains, but with pores segregated at the grain boundaries. Lateral densification of the grain columns was significantly improved by reducing the partial pressure of oxygen from 120 mTorr to 50 mTorr, presumably due to enhanced adatom mobility at the surface accompanying increased bombardment. It was found that varying the fractional annealing duration with respect to the deposition duration produced little effect on lateral grain growth. However, increasing the fractional annealing duration led to shift of 111 PZT X-ray diffraction peaks to higher 2theta values, suggesting residual in-plane tensile stresses in the films. Thermal simulations were used to understand the annealing process. Evolution of the film microstructure is described in terms of transient heating from the pulsed laser determining the nucleation events, while the energy of the arriving species dictates grain growth/coarsening.

Coherent Spectroscopy of Ultra-Cold Mercury for the UV to VUV

DTIC Science & Technology

2015-11-20

clock. During this funding period a novel UV laser system was developed to efficiently cool and trap atomic Hg to temperatures below 100 microKelvin...During this funding period a novel UV laser system was developed to efficiently cool and trap atomic Hg to temperatures below 100 microKelvin. This...able  to  slowly  scan  the   UV   laser  system  to  locate  the  clock  transition   (using  the  standard  technique

Application of Time-Resolved Spectroscopies to the Study of Energetic Materials - 1982

DTIC Science & Technology

1983-05-24

fluores- cence intensity as a function of UV pulse energy, for individual laser shots. The lower curve shows the UV + probe induced fluorescence... intensity as a function of UV pulse energy, for individual laser shots. The lower curve shows the UV + probe Induced fluorescence, at 1 ns delay...locked Nd:YAG Laser Pulse ", Appl. Phys. Lett 26, 501-503 (1975). 97 43. A. J. Campillo, V. H. Kollman and S. L. Shapiro, " Intensity Dependence of

Characterization of Novel Thin-Films and Structures for Integrated Circuit and Photovoltaic Applications

NASA Astrophysics Data System (ADS)

Zhao, Zhao

Thin films have been widely used in various applications. This research focuses on the characterization of novel thin films in the integrated circuits and photovoltaic techniques. The ion implanted layer in silicon can be treated as ion implanted thin film, which plays an essential role in the integrated circuits fabrication. Novel rapid annealing methods, i.e. microwave annealing and laser annealing, are conducted to activate ion dopants and repair the damages, and then are compared with the conventional rapid thermal annealing (RTA). In terms of As+ and P+ implanted Si, the electrical and structural characterization confirms that the microwave and laser annealing can achieve more efficient dopant activation and recrystallization than conventional RTA. The efficient dopant activation in microwave annealing is attributed to ion hopping under microwave field, while the liquid phase growth in laser annealing provides its efficient dopant activation. The characterization of dopants diffusion shows no visible diffusion after microwave annealing, some extent of end range of diffusion after RTA, and significant dopant diffusion after laser annealing. For photovoltaic applications, an indium-free novel three-layer thin-film structure (transparent composited electrode (TCE)) is demonstrated as a promising transparent conductive electrode for solar cells. The characterization of TCE mainly focuses on its optical and electrical properties. Transfer matrix method for optical transmittance calculation is validated and proved to be a desirable method for predicting transmittance of TCE containing continuous metal layer, and can estimate the trend of transmittance as the layer thickness changes. TiO2/Ag/TiO2 (TAgT) electrode for organic solar cells (OSCs) is then designed using numerical simulation and shows much higher Haacke figure of merit than indium tin oxide (ITO). In addition, TAgT based OSC shows better performance than ITO based OSC when compatible hole transfer layer is employed. The electrical and structural characterization of hole transfer layers (HTLs) in OSCs reveals MoO3 is the compatible HTL for TAgT anode. In the end, the reactive ink printed Ag film for solar cell contact application is studied by characterizing its electromigration lifetime. A percolative model is proposed and validated for predicting the resistivity and lifetime of printed Ag thin films containing porous structure.

Quantitative Detection of Combustion Species using Ultra-Violet Diode Lasers

NASA Technical Reports Server (NTRS)

Pilgrim, J. S.; Peterson, K. A.

2001-01-01

Southwest Sciences is developing a new microgravity combustion diagnostic based on UV diode lasers. The instrument will allow absolute concentration measurements of combustion species on a variety of microgravity combustion platforms including the Space Station. Our approach uses newly available room temperature UV diode lasers, thereby keeping the instrument compact, rugged and energy efficient. The feasibility of the technique was demonstrated by measurement of CH radicals in laboratory flames. Further progress in fabrication technology of UV diode lasers at shorter wavelengths and higher power will result in detection of transient species in the deeper UV. High sensitivity detection of combustion radicals is provided with wavelength modulation absorption spectroscopy.

The influence of post-deposition annealing on the structure, morphology and luminescence properties of pulsed laser deposited La0.5Gd1.5SiO5 doped Dy3+ thin films

NASA Astrophysics Data System (ADS)

Ogugua, Simon N.; Swart, Hendrik C.; Ntwaeaborwa, Odireleng M.

2018-04-01

The influence of post-deposition annealing on the structure, particle morphology and photoluminescence properties of dysprosium (Dy3+) doped La0.5Gd1.5SiO5 thin films grown on Si(111) substrates at different substrate temperatures using pulsed laser deposition (PLD) technique were studied. The X-ray diffractometer results showed an improved crystallinity after post-annealing. The topography and morphology of the post-annealed films were studied using atomic force microscopy and field emission scanning electron microscopy respectively. The elemental composition in the surface region of the films were analyzed using energy dispersive X-ray spectroscopy. The photoluminescence studies showed an improved luminescent after post-annealing. The cathodoluminescence properties of the films are also reported. The CIE colour coordinates calculated from the photoluminescence and cathodoluminescence data suggest that the films can have potential application in white light emitting diode (LED) and field emission display (FED) applications.

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching

NASA Astrophysics Data System (ADS)

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-01-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Development of deep-ultraviolet metal vapor lasers

NASA Astrophysics Data System (ADS)

Sabotinov, Nikola V.

2004-06-01

Deep ultraviolet laser generation is of great interest in connection with both the development of new industrial technologies and applications in medicine, biology, chemistry, etc. The development of metal vapor UV lasers oscillating in the pulsed mode with high pulse repetition frequencies and producing high average output powers is of particular interest for microprocessing of polymers, photolithography and fluorescence applications. At present, metal vapor lasers generate deep-UV radiation on the base of two methods. The first method is non-linear conversion of powerful laser generation from the visible region into the deep ultraviolet region. The second method is direct UV laser action on ion and atomic transitions of different metals.

Elucidation of Free Radical and Optogalvanic Spectroscopy Associated with Microgravity Combustion via Conventional and Novel Laser Platforms

NASA Technical Reports Server (NTRS)

Misra, Prabhakar; She, Yong-Bo; Zhu, Xin-Ming; King, Michael

1997-01-01

Combustion studies under both normal gravity and microgravity conditions depend a great deal on the availability and quality of the diagnostic systems used for such investigations. Microgravity phenomena are specially susceptible to even small perturbations and therefore non-intrusive diagnostic techniques are of paramount importance for successful understanding of reduced-gravity combustion phenomena. Several non-intrusive diagnostic techniques are available for probing and delineating normal as well as reduced gravity combustion processes, such as Rayleigh scattering, Raman scattering, Mie scattering, velocimetry, interferometric and Schlieren techniques, emission and laser-induced fluorescence (LIF) spectroscopy. Our approach is to use the LIF technique as a non-intrusive diagnostic tool for the study of combustion-associated free radicals and use the concomitant optogalvanic transitions to accomplish precise calibration of the laser wavelengths used for recording the excitation spectra of transient molecular species. In attempting to perform spectroscopic measurements on chemical intermediates, we have used conventional laser sources as well as new and novel platforms employing rare-earth doped solid-state lasers. Conventional (commercially available) sources of tunable UV laser radiation are extremely cumbersome and energy-consuming devices that are not very suitable for either in-space or in-flight (or microgravity drop tower) experiments. Traditional LIF sources of tunable UV laser radiation involve in addition to a pump laser (usually a Nd:YAG laser with an attached frequency-doubling stage), a tunable dye laser. In turn, the dye laser has to be provided with a dye circulation system and a subsequent stage for frequency-doubling of the dye laser radiation, together with a servo-tuning system (termed the 'Autotracker') to follow the wavelength changes and also an optical system (called the 'Frequency Separator') for separation of the emanating visible and UV beams. In contrast to this approach, we have devised an alternate arrangement for recording LIF excitation spectra of free radicals (following appropriate precursor fragmentation) that utilizes a tunable rare-earth doped solid state laser system with direct UV pumping. We have designed a compact and portable tunable UV laser system incorporating features necessary for both in-space and in-flight spectroscopy experiments. For the purpose of LIF excitation, we have developed an all-solid-state tunable UV laser that employs direct pumping of the solid-state UV-active medium employing UV harmonics from a Nd:YAG laser. An optical scheme with counterpropagating photolysis and excitation beams focused by suitable lenses into a reaction vacuum chamber was employed.

Nanoimprinted organic semiconductor laser pumped by a light-emitting diode.

PubMed

Tsiminis, Georgios; Wang, Yue; Kanibolotsky, Alexander L; Inigo, Anto R; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-05-28

An organic semiconductor laser, simply fabricated by UV-nanoimprint lithography (UV-NIL), that is pumped with a pulsed InGaN LED is demonstrated. Molecular weight optimization of the polymer gain medium on a nanoimprinted polymer distributed feedback resonator enables the lowest reported UV-NIL laser threshold density of 770 W cm(-2) , establishing the potential for scalable organic laser fabrication compatible with mass-produced LEDs. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Inkjet-Printed In-Ga-Zn Oxide Thin-Film Transistors with Laser Spike Annealing

NASA Astrophysics Data System (ADS)

Huang, Hang; Hu, Hailong; Zhu, Jingguang; Guo, Tailiang

2017-07-01

Inkjet-printed In-Ga-Zn oxide (IGZO) thin-film transistors (TFTs) have been fabricated at low temperature using laser spike annealing (LSA) treatment. Coffee-ring effects during the printing process were eliminated to form uniform IGZO films by simply increasing the concentration of solute in the ink. The impact of LSA on the TFT performance was studied. The field-effect mobility, threshold voltage, and on/off current ratio were greatly influenced by the LSA treatment. With laser scanning at 1 mm/s for 40 times, the 30-nm-thick IGZO TFT baked at 200°C showed mobility of 1.5 cm2/V s, threshold voltage of -8.5 V, and on/off current ratio >106. Our findings demonstrate the feasibility of rapid LSA treatment of low-temperature inkjet-printed oxide semiconductor transistors, being comparable to those obtained by conventional high-temperature annealing.

A Solid State Ultraviolet Lasers Based on Cerium-Doped LiCaAIF(sub 6) Crystal Resonator

NASA Technical Reports Server (NTRS)

Yu, Nan; Le, Thanh; Schowalter, Steven J.; Rellergert, Wade; Jeet, Justin; Lin, Guoping; Hudson, Eric

2012-01-01

We report the first demonstration of a UV laser using a high-Q whispering gallery mode (WGM) resonator of Ce+: LiCaAlF6. We show that WGM resonators from LiCaAlF6 can achieve a Q of 2.6 x 10(sup 7) at UV. We demonstrated a UV laser at 290 nm with a pulsed pump laser at 266 nm. The experiments showed the low pump threshold intensity of 7.5 x 10(sup 9) W/m(sup 2) and slope efficiency of 25%. We have also observed lasing delay dynamics. These results are consistent with our modeling and theoretical estimates, and pave the way for a low threshold cw UV laser using WGM resonator cavity.

Contamination and UV lasers: lessons learned

NASA Astrophysics Data System (ADS)

Daly, John G.

2015-09-01

Laser induced damage to optical elements has been a subject of significant research, development, and improvement, since the first lasers were built over the last 50 years. Better materials, with less absorption, impurities, and defects are available, as well as surface coatings with higher laser damage resistance. However, the presence of contamination (particles, surface deposition films, or airborne) can reduce the threshold for damage by several orders of magnitude. A brief review of the anticipated laser energy levels for damage free operation is presented as a lead into the problems associated with contamination for ultraviolet (UV) laser systems. As UV lasers become more common in applications especially in areas such as lithography, these problems have limited reliability and added to costs. This has been characterized as Airborne Molecular Contamination (AMC) in many published reports. Normal engineering guidelines such as screening materials within the optical compartment for low outgassing levels is the first step. The use of the NASA outgassing database (or similar test methods) with low Total Mass Loss (TML) and Condensed Collected Volatiles Collected Mass (CVCM) is a good baseline. Energetic UV photons are capable of chemical bond scission and interaction with surface contaminant or airborne materials results in deposition of obscuring film laser footprints that continue to degrade laser system performance. Laser systems with average powers less than 5 mW have been shown to exhibit aggressive degradation. Lessons learned over the past 15 years with UV laser contamination and steps to reduce risk will be presented.

Effect of time varying phosphorus implantation on optoelectronics properties of RF sputtered ZnO thin-films

NASA Astrophysics Data System (ADS)

Murkute, Punam; Ghadi, Hemant; Saha, Shantanu; Chavan, Vinayak; Chakrabarti, Subhananda

2018-03-01

ZnO has potential application in the field of short wavelength devices like LED's, laser diodes, UV detectors etc, because of its wide band gap (3.34 eV) and high exciton binding energy (60 meV). ZnO possess N-type conductivity due to presence of defects arising from oxygen and zinc interstitial vacancies. In order to achieve P-type or intrinsic carrier concentration an implantation study is preferred. In this report, we have varied phosphorous implantation time and studied its effect on optical as well structural properties of RF sputtered ZnO thin-films. Implantation was carried out using Plasma Immersion ion implantation technique for 10 and 20 s. These films were further annealed at 900°C for 10 s in oxygen ambient to activate phosphorous dopants. Low temperature photoluminescence (PL) spectra measured two distinct peaks at 3.32 and 3.199 eV for 20 s implanted sample annealed at 900°C. Temperature dependent PL measurement shows slightly blue shift in peak position from 18 K to 300 K. 3.199 eV peak can be attributed to donoracceptor pair (DAP) emission and 3.32 eV peak corresponds to conduction-band-to-acceptor (eA0) transition. High resolution x-ray diffraction revels dominant (002) peak from all samples. Increasing implantation time resulted in low peak intensity suggesting a formation of implantation related defects. Compression in C-axis with implantation time indicates incorporation of phosphorus in the formed film. Improvement in surface quality was observed from 20 s implanted sample which annealed at 900°C.

Fast wettability transition from hydrophilic to superhydrophobic laser-textured stainless steel surfaces under low-temperature annealing

NASA Astrophysics Data System (ADS)

Ngo, Chi-Vinh; Chun, Doo-Man

2017-07-01

Recently, the fabrication of superhydrophobic metallic surfaces by means of pulsed laser texturing has been developed. After laser texturing, samples are typically chemically coated or aged in ambient air for a relatively long time of several weeks to achieve superhydrophobicity. To accelerate the wettability transition from hydrophilicity to superhydrophobicity without the use of additional chemical treatment, a simple annealing post process has been developed. In the present work, grid patterns were first fabricated on stainless steel by a nanosecond pulsed laser, then an additional low-temperature annealing post process at 100 °C was applied. The effect of 100-500 μm step size of the textured grid upon the wettability transition time was also investigated. The proposed post process reduced the transition time from a couple of months to within several hours. All samples showed superhydrophobicity with contact angles greater than 160° and sliding angles smaller than 10° except samples with 500 μm step size, and could be applied in several potential applications such as self-cleaning and control of water adhesion.

Properties of WO3-x Electrochromic Thin Film Prepared by Reactive Sputtering with Various Post Annealing Temperatures

NASA Astrophysics Data System (ADS)

Kim, Min Hong; Choi, Hyung Wook; Kim, Kyung Hwan

2013-11-01

The WO3-x thin films were prepared on indium tin oxide (ITO) coated glass at 0.7 oxygen flow ratio [O2/(Ar+O2)] using the facing targets sputtering (FTS) system at room temperature. In order to obtain the annealing effect, as-deposited thin films were annealed at temperatures of 100, 200, 300, 400, and 500 °C for 1 h in open air. The structural properties of the WO3-x thin film were measured using an X-ray diffractometer. The WO3-x thin films annealed at up to 300 °C indicated amorphous properties, while those annealed above 400 °C indicated crystalline properties. The electrochemical and optical properties of WO3-x thin films were measured using cyclic voltammetry and a UV/vis spectrometer. The maximum value of coloration efficiency obtained was 34.09 cm2/C for thin film annealed at 200 °C. The WO3-x thin film annealed at 200 °C showed superior electrochromic properties.

Nanorods on surface of GaN-based thin-film LEDs deposited by post-annealing after photo-assisted chemical etching.

PubMed

Chen, Lung-Chien; Lin, Wun-Wei; Liu, Te-Yu

2017-12-01

This study investigates the optoelectronic characteristics of gallium nitride (GaN)-based thin-film light-emitting diodes (TF-LEDs) that are formed by a two-step transfer process that involves wet etching and post-annealing. In the two-step transfer process, GaN LEDs were stripped from sapphire substrates by the laser lift-off (LLO) method using a KrF laser and then transferred onto ceramic substrates. Ga-K nanorods were formed on the surface of the GaN-based TF-LEDs following photo-assisted chemical etching and photo-enhanced post-annealing at 100 °C for 1 min. As a result, the light output power of GaN-based TF-LEDs with wet etching and post-annealing was over 72% more than that of LEDs that did not undergo these treatments.

Fabrication of Ohmic contact on semi-insulating 4H-SiC substrate by laser thermal annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cheng, Yue; Lu, Wu-yue; Wang, Tao

The Ni contact layer was deposited on semi-insulating 4H-SiC substrate by magnetron sputtering. The as-deposited samples were treated by rapid thermal annealing (RTA) and KrF excimer laser thermal annealing (LTA), respectively. The RTA annealed sample is rectifying while the LTA sample is Ohmic. The specific contact resistance (ρ{sub c}) is 1.97 × 10{sup −3} Ω·cm{sup 2}, which was determined by the circular transmission line model. High resolution transmission electron microscopy morphologies and selected area electron diffraction patterns demonstrate that the 3C-SiC transition zone is formed in the near-interface region of the SiC after the as-deposited sample is treated by LTA,more » which is responsible for the Ohmic contact formation in the semi-insulating 4H-SiC.« less

The optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

PubMed

Qiu, Zong-Bo; Zhu, Xin-Jun; Li, Fang-Min; Liu, Xiao; Yue, Ming

2007-07-01

Lasers have been widely used in the field of biology along with the development of laser technology, but the mechanism of the bio-effect of lasers is not explicit. The objective of this paper was to test the optical effect of a laser on protecting wheat from UV-B damage. A patent instrument was employed to emit semiconductor laser (wavelength 650 nm) and incoherent red light, which was transformed from the semiconductor laser. The wavelength, power and lightfleck diameter of the incoherent red light are the same as those of the semiconductor laser. The semiconductor laser (wavelength 650 nm, power density 3.97 mW mm(-2)) and incoherent red light (wavelength 650 nm, power density 3.97 mW mm(-2)) directly irradiated the embryo of wheat seeds for 3 min respectively, and when the seedlings were 12-day-old they were irradiated by UV-B radiation (10.08 kJ m(-2)) for 12 h in the dark. Changes in the concentration of malondialdehyde (MDA), hydrogen peroxide (H(2)O(2)), glutathione (GSH), ascorbate (AsA), carotenoids (CAR), the production rate of superoxide radical (O(2)(-)), the activities of peroxidase (POD), catalase (CAT), superoxide dismutase (SOD) and the growth parameters of seedlings (plant height, leaf area and fresh weight) were measured to test the optical effect of the laser. The results showed that the incoherent red light treatment could not enhance the activities of SOD, POD and CAT and the concentration of AsA and CAR. When the plant cells were irradiated by UV-B, the incoherent red light treatment could not eliminate active oxygen and prevent lipid peroxidation in wheat. The results also clearly demonstrate that the plant DNA was damaged by UV-B radiation and semiconductor laser irradiance had the capability to protect plants from UV-B-induced DNA damage, while the incoherent red light could not. This is the first investigation reporting the optical effect of a semiconductor laser on protecting wheat from UV-B radiation damage.

Influence of the frequency of laser toning for melasma on occurrence of leukoderma and its early detection by ultraviolet imaging.

PubMed

Sugawara, Jun; Kou, Seiko; Kou, Sousei; Yasumura, Kazunori; Satake, Toshihiko; Maegawa, Jiro

2015-02-01

Laser "toning" with a Q-switched neodymium-doped yttrium aluminum garnet (Nd:YAG) laser has recently been described to be effective for the treatment of melasma. Leukoderma is a refractory complication of laser toning for melasma, but it can be detected early with ultraviolet (UV) imaging. We assessed the relationship between leukoderma and the frequency or total number of laser toning sessions, as well as the effectiveness of UV imaging for detecting leukoderma. The subjects included 147 patients who received at least five laser toning sessions. Subjects were classified into three groups according to the frequency of treatment (weekly for Group A1, fortnightly for Group A2, and monthly for Group B), and the incidence of leukoderma was compared among the three groups. In patients who developed leukoderma, the interval between clinical diagnosis and leukoderma detection on UV images (obtained with a Visia Evolution during every laser toning session) was determined to evaluate the effectiveness of UV imaging for the early detection of leukoderma. The overall incidence of leukoderma was 2% (3/147 patients): 3.8% (1/26 patients) in Group A1, 4% (2/49 patients) in Group A2, and 0% (0/72 patients) in Group B. There were no significant differences in the incidence of leukoderma relative to the frequency of laser toning. In two of the three patients who developed leukoderma, it was diagnosed clinically at the 20th and 21st laser toning session, whereas it was diagnosed by UV imaging at the 12th and 13th session. In the remaining 1 patient, leukoderma was detected clinically and by UV imaging at the 7th session. There was no significant difference in the incidence of leukoderma related to the frequency of laser toning. This study showed that there are two types of leukoderma associated with laser toning. UV imaging was effective for the early detection of type 1 leukoderma, which seems to be related to the cumulative laser energy delivered, but not for detecting type 2 leukoderma, which may be due to direct phototoxicity. © 2015 Wiley Periodicals, Inc.

A combination of He-Ne laser irradiation and exogenous NO application efficiently protect wheat seedling from oxidative stress caused by elevated UV-B stress.

PubMed

Li, Yongfeng; Gao, Limei; Han, Rong

2016-12-01

The elevated ultraviolet-B (UV-B) stress induces the accumulation of a variety of intracellular reactive oxygen species (ROS), which seems to cause oxidative stress for plants. To date, very little work has been done to evaluate the biological effects of a combined treatment with He-Ne laser irradiation and exogenous nitric oxide (NO) application on oxidative stress resulting from UV-B radiation. Thus, our study investigated the effects of a combination with He-Ne laser irradiation and exogenous NO treatment on oxidative damages in wheat seedlings under elevated UV-B stress. Our data showed that the reductions in ROS levels, membrane damage parameters, while the increments in antioxidant contents and antioxidant enzyme activity caused by a combination with He-Ne laser and exogenous NO treatment were greater than those of each individual treatment. Furthermore, these treatments had a similar effect on transcriptional activities of plant antioxidant enzymes. This implied that the protective effects of a combination with He-Ne laser irradiation and exogenous NO treatment on oxidative stress resulting from UV-B radiation was more efficient than each individual treatment with He-Ne laser or NO molecule. Our findings might provide beneficial theoretical references for identifying some effective new pathways for plant UV-B protection.

Damage repair effect of He-Ne laser on wheat exposed to enhanced ultraviolet-B radiation.

PubMed

Yang, Liyan; Han, Rong; Sun, Yi

2012-08-01

We explored the use of He-Ne laser on alleviating the effects of ultraviolet-B (UV-B) light on winter wheat development. Triticum aestivum L. cv. Linyuan 077038 seeds were irradiated with either UV-B (10.08 kJ m(-2) d(-1)) (enhanced UV-B) or a combination of UV-B light and the He-Ne laser (5.43 mW mm(-2)). Plants also were exposed to the He-Ne laser alone. Our results showed that enhanced UV-B produced negative effects on seed germination and seedling development. Germination rate and shoot growth decreased compared with the control. Root development was inhibited, and root length was decreased. Chlorophyll content and expression of peroxidase (POD) isozymes and their activity decreased. Seedling height and shoot biomass dropped significantly compared to the control. Implementing the He-Ne laser partially alleviated the injury of enhanced UV-B radiation, because germination rate and shoot growth were enhanced together with root development. Chlorophyll content and POD expression and activity increased. Seedling height and shoot biomass were increased. Furthermore, the use of the He-Ne laser alone showed a favorable effect on seedling growth compared with the control. Copyright © 2012 Elsevier Masson SAS. All rights reserved.

Physical properties of a non-transparent cadmium oxide thick film deposited at low fluence by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quiñones-Galván, J.G., E-mail: erk_183@hotmail.com; Lozada-Morales, R.; Jiménez-Sandoval, S.

Highlights: • A non-transparent cadmium oxide film has been deposited by pulsed laser deposition. • The CdO film is polycrystalline and highly oriented in the (2 0 0) direction. • Thermal treatment was applied in order to see the effect on its physical properties. - Abstract: A stable non-transparent CdO film was grown by pulsed laser deposition. The sample was thermally annealed at 500 °C in air. A (2 0 0) highly oriented polycrystalline film was obtained. The annealed sample has not preferred orientation. Scanning electron micrographs show a grain size reduction for the annealed sample. By Raman spectroscopy, themore » defects related second order vibrational modes of CdO were observed. Chemical composition analysis shows the presence of CdO together with a substoichiometric CdO{sub x} phase for the as-grown sample. For the annealed sample a compensation of oxygen vacancies was observed. Electrical resistivity measurements give a value of 8.602 × 10{sup −4} (Ω cm) for the as-grown film. For the annealed sample the electrical resistivity increased to a value of 9.996 × 10{sup −3} (Ω cm). Zero transmission has never been reported for CdO films. The photoluminescence spectra were measured in order to shed some light on the origin of the zero transmission.« less

Hybrid 2D patterning using UV laser direct writing and aerosol jet printing of UV curable polydimethylsiloxane

NASA Astrophysics Data System (ADS)

Obata, Kotaro; Schonewille, Adam; Slobin, Shayna; Hohnholz, Arndt; Unger, Claudia; Koch, Jürgen; Suttmann, Oliver; Overmeyer, Ludger

2017-09-01

The hybrid technique of aerosol jet printing and ultraviolet (UV) laser direct writing was developed for 2D patterning of thin film UV curable polydimethylsiloxane (PDMS). A dual atomizer module in an aerosol jet printing system generated aerosol jet streams from material components of the UV curable PDMS individually and enables the mixing in a controlled ratio. Precise control of the aerosol jet printing achieved the layer thickness of UV curable PDMS as thin as 1.6 μm. This aerosol jet printing system is advantageous because of its ability to print uniform thin-film coatings of UV curable PDMS on planar surfaces as well as free-form surfaces without the use of solvents. In addition, the hybrid 2D patterning using the combination of UV laser direct writing and aerosol jet printing achieved selective photo-initiated polymerization of the UV curable PDMS layer with an X-Y resolution of 17.5 μm.

Apparatuses and methods for laser reading of thermoluminescent phosphors

DOEpatents

Braunlich, Peter F.; Tetzlaff, Wolfgang

1989-01-01

Apparatuses and methods for rapidly reading thermoluminescent phosphors to determine the amount of luminescent energy stored therein. The stored luminescent energy is interpreted as a measure of the total exposure of the thermoluminescent phosphor to ionizing radiation. The thermoluminescent phosphor reading apparatus uses a laser to generate a laser beam. The laser beam power level is monitored by a laser power detector and controlled to maintain the power level at a desired value or values which can vary with time. A shutter or other laser beam interrupting means is used to control exposure of the thermoluminescent phosphor to the laser beam. The laser beam can be equalized using an opitcal equalizer so that the laser beam has an approximately uniform power density across the beam. The heated thermoluminescent phosphor emits a visible or otherwise detectable luminescent emission which is measured as an indication of the radiation exposure of the thermoluminscent phosphors. Also disclosed are preferred signal processing and control circuits including one system using a digital computer. Also disclosed are time-profiled laser power cycles for pre-anneal, read and post-anneal treatment of phosphors.

Ultrahigh-Speed Electrically Injected 1.55 micrometer Quantum Dot Microtube and Nanowire Lasers on Si

DTIC Science & Technology

2015-08-30

Ultrahigh-Speed Electrically Injected 1.55 um Quantum Dot Microtube and Nanowire Lasers on Si In this report, we describe the progress made in rolled...up InP-based tube lasers and in the growth and characterization of III-nitride nanowire structures on Si. We report on the demonstration of...injected AlGaN nanowire lasers that can operate in the UV-AII (315-340 nm), UV-B (280-315nm), and UV-C (200-280 nm). The views, opinions and/or findings

40Ar* loss in experimentally deformed muscovite and biotite with implications for 40Ar/39Ar geochronology of naturally deformed rocks

USGS Publications Warehouse

Cosca, M.; Stunitz, H.; Bourgeix, A.-L.; Lee, J.P.

2011-01-01

The effects of deformation on radiogenic argon (40Ar*) retentivity in mica are described from high pressure experiments performed on rock samples of peraluminous granite containing euhedral muscovite and biotite. Cylindrical cores, ???15mm in length and 6.25mm in diameter, were drilled from granite collected from the South Armorican Massif in northwestern France, loaded into gold capsules, and weld-sealed in the presence of excess water. The samples were deformed at a pressure of 10kb and a temperature of 600??C over a period 29 of hours within a solid medium assembly in a Griggs-type triaxial hydraulic deformation apparatus. Overall shortening in the experiments was approximately 10%. Transmitted light and secondary and backscattered electron imaging of the deformed granite samples reveals evidence of induced defects and for significant physical grain size reduction by kinking, cracking, and grain segmentation of the micas.Infrared (IR) laser (CO2) heating of individual 1.5-2.5mm diameter grains of muscovite and biotite separated from the undeformed granite yield well-defined 40Ar/39Ar plateau ages of 311??2Ma (2??). Identical experiments on single grains separated from the experimentally deformed granite yield results indicating 40Ar* loss of 0-35% in muscovite and 2-3% 40Ar* loss in biotite. Intragrain in situ ultraviolet (UV) laser ablation 40Ar/39Ar ages (??4-10%, 1??) of deformed muscovites range from 309??13 to 264??7Ma, consistent with 0-16% 40Ar* loss relative to the undeformed muscovite. The in situ UV laser ablation 40Ar/39Ar ages of deformed biotite vary from 301 to 217Ma, consistent with up to 32% 40Ar* loss. No spatial correlation is observed between in situ 40Ar/39Ar age and position within individual grains. Using available argon diffusion data for muscovite the observed 40Ar* loss in the experimentally treated muscovite can be utilized to predict average 40Ar* diffusion dimensions. Maximum 40Ar/39Ar ages obtained by UV laser ablation overlap those of the undeformed muscovite, indicating argon loss of <1% and an average effective grain radius for 40Ar* diffusion ???700??m. The UV laser ablation and IR laser incremental 40Ar/39Ar ages indicating 40Ar* loss of 16% and 35%, respectively, are consistent with an average diffusion radius ???100??m. These results support a hypothesis of grain-scale 40Ar* diffusion distances in undeformed mica and a heterogeneous mechanical reduction in the intragrain effective diffusion length scale for 40Ar* in deformed mica. Reduction in the effective diffusion length scale in naturally deformed samples occurs most probably through production of mesoscopic and submicroscopic defects such as, e.g., stacking faults. A network of interconnected defects, continuously forming and annealing during dynamic deformation likely plays an important role in controlling both 40Ar* retention and intragrain distribution in deformed mica. Intragrain 40Ar/39Ar ages, when combined with estimates of diffusion kinetics and distances, may provide a means of establishing thermochronological histories from individual micas. ?? 2011.

Deep UV laser-induced fluorescence detection of unlabeled drugs and proteins in microchip electrophoresis.

PubMed

Schulze, Philipp; Ludwig, Martin; Kohler, Frank; Belder, Detlev

2005-03-01

Deep UV fluorescence detection at 266-nm excitation wavelength has been realized for sensitive detection in microchip electrophoresis. For this purpose, an epifluorescence setup was developed enabling the coupling of a deep UV laser into a commercial fluorescence microscope. Deep UV laser excitation utilizing a frequency quadrupled pulsed laser operating at 266 nm shows an impressive performance for native fluorescence detection of various compounds in fused-silica microfluidic devices. Aromatic low molecular weight compounds such as serotonin, propranolol, a diol, and tryptophan could be detected at low-micromolar concentrations. Deep UV fluorescence detection was also successfully employed for the detection of unlabeled basic proteins. For this purpose, fused-silica chips dynamically coated with hydroxypropylmethyl cellulose were employed to suppress analyte adsorption. Utilizing fused-silica chips permanently coated with poly(vinyl alcohol), it was also possible to separate and detect egg white chicken proteins. These data show that deep UV fluorescence detection significantly widens the application range of fluorescence detection in chip-based analysis techniques.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wu Changle; Qiao Xueliang; Luo Langli

Flower-like ZnO nano/microstructures have been synthesized by thermal treatment of Zn(NH{sub 3}){sub 4}{sup 2+} precursor in aqueous solvent, using ammonia as the structure directing agent. A number of techniques, including X-ray diffraction (XRD), field emission scan electron microscopy (FESEM), transmission electron microscopy (TEM), thermal analysis, and photoluminescence (PL) were used to characterize the obtained ZnO structures. The photoluminescence (PL) measurements indicated that the as-synthesized ZnO structures showed UV ({approx}375 nm), blue ({approx}465 nm), and yellow ({approx}585 nm) emission bands when they were excited by a He-Gd laser using 320 nm as the excitation source. Furthermore, it has been interestingly foundmore » that the intensity of light emission at {approx}585 nm remarkably decreased when the obtained ZnO nanocrystals were annealed at 600 deg. C for 3 h in air. The reason might be the possible oxygen vacancies and interstitials in the sample decreased at high temperature.« less

Laser post-processing of halide perovskites for enhanced photoluminescence and absorbance

NASA Astrophysics Data System (ADS)

Tiguntseva, E. Y.; Saraeva, I. N.; Kudryashov, S. I.; Ushakova, E. V.; Komissarenko, F. E.; Ishteev, A. R.; Tsypkin, A. N.; Haroldson, R.; Milichko, V. A.; Zuev, D. A.; Makarov, S. V.; Zakhidov, A. A.

2017-11-01

Hybrid halide perovskites have emerged as one of the most promising type of materials for thin-film photovoltaic and light-emitting devices. Further boosting their performance is critically important for commercialization. Here we use femtosecond laser for post-processing of organo-metalic perovskite (MAPbI3) films. The high throughput laser approaches include both ablative silicon nanoparticles integration and laser-induced annealing. By using these techniques, we achieve strong enhancement of photoluminescence as well as useful light absorption. As a result, we observed experimentally 10-fold enhancement of absorbance in a perovskite layer with the silicon nanoparticles. Direct laser annealing allows for increasing of photoluminescence over 130%, and increase absorbance over 300% in near-IR range. We believe that the developed approaches pave the way to novel scalable and highly effective designs of perovskite based devices.

Electrical properties of undoped zinc oxide nanostructures at different annealing temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nasir, M. F., E-mail: babaibaik2002@yahoo.com; Zainol, M. N., E-mail: nizarzainol@yahoo.com; Hannas, M., E-mail: mhannas@gmail.com

This project has been focused on the electrical and optical properties respectively on the effect of Undoped zinc oxide (ZnO) thin films at different annealing temperature which is varied 400 °C, 450 °C, 500 °C, and 550 °C.Undoped ZnO solutions were deposited onto the glass substrates using sol-gel spin coating method. This project was involved with three phases, which are thin films preparation, deposition and characterization. The thin films were characterized using Current Voltage (I-V) measurement and UV-vis-NIR spectrophotometer for electrical properties and optical properties. The electrical properties show that the resistivity is the lowest at 500 °C which itsmore » resistivity is 5.36 × 10{sup 4} Ωcm{sup −1}. The absorption coefficient spectrum obtained from UV-Vis-NIR spectrophotometer measurement shows all films exhibit very low absorption in the visible (400-800 nm) and near infrared (NIR) (>800 nm) range but exhibit high absorption in the UV range.« less

Fabrication of ZnO Thin Films by Sol-Gel Spin Coating and Their UV and White-Light Emission Properties

NASA Astrophysics Data System (ADS)

Kumar, Mirgender; Dubey, Sarvesh; Rajendar, Vanga; Park, Si-Hyun

2017-10-01

ZnO thin films have been fabricated by the sol-gel spin-coating technique and annealed under different conditions, and their ultraviolet (UV) and white-light emission properties investigated. Different ambient conditions including oxygen, nitrogen, zinc-rich nitrogen, and vacuum were used to tune the main properties of the ZnO thin films. The resistivity varied from the conductive to semi-insulating regime, and the luminescence emission from fairly intense UV to polychromatic. The emission intensity was also found to be a function of the annealing conditions. Possible routes to compensate the loss of emission characteristics are discussed. X-ray photoelectron spectroscopy (XPS) analysis was carried out to detect the chemical states of the zinc/oxygen species. The changes in the electrical and emission properties are explained based on annihilation/formation of inherent donor/acceptor-type defects. Such ZnO thin films could have potential applications in solid-state lighting.

Investigation on Structural and Optical Properties of Copper Telluride Thin Films with Different Annealing Temperature

NASA Astrophysics Data System (ADS)

Nishanthini, R.; Muthu Menaka, M.; Pandi, P.; Bahavan Palani, P.; Neyvasagam, K.

The copper telluride (Cu2Te) thin film of thickness 240nm was coated on a microscopic glass substrate by thermal evaporation technique. The prepared films were annealed at 150∘C and 250∘C for 1h. The annealing effect on Cu2Te thin films was examined with different characterization methods like X-ray Diffraction Spectroscopy (XRD), Scanning Electron Microscopy (SEM), Ultra Violet-Visible Spectroscopy (UV-VIS) and Photoluminescence (PL) Spectroscopy. The peak intensities of XRD spectra were increased while increasing annealing temperature from 150∘C to 250∘C. The improved crystallinity of the thin films was revealed. However, the prepared films are exposed complex structure with better compatibility. Moreover, the shift in band gap energy towards higher energies (blue shift) with increasing annealing temperature is observed from the optical studies.

Effect of stress, strain and optical properties in vacuum and normal annealed ZnO thin films using RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Kumar, B. Santhosh; Purvaja, K.; Harinee, N.; Venkateswaran, C.

2018-05-01

Zinc oxide thin films have been deposited on quartz substrate using RF magnetron sputtering. The deposited films were subjected to different annealing atmosphere at a fixed temperature of 500 °C for 5h. The X-ray diffraction (XRD) patterns reveals the shift in the peak of both normal annealed and vacuum annealed thin films when compared to as-deposited ZnO film. The crystallite size, intrinsic stress and other parameters were calculated from XRD data. The surface morphology of the obtained films were studied using Atomic force microscopy (AFM). From Uv-Visible spectroscopy, the peak at 374 nm of all the films is characteristics of ZnO. The structural, thermal stability and optical properties of the annealed ZnO films are discussed in detail.

Titania nanotubes prepared by rapid breakdown anodization for photocatalytic decolorization of organic dyes under UV and natural solar light.

PubMed

Ali, Saima; Granbohm, Henrika; Lahtinen, Jouko; Hannula, Simo-Pekka

2018-06-14

Titania nanotube (TNT) powder was prepared by rapid breakdown anodization (RBA) in a perchloric acid electrolyte. The photocatalytic efficiency of the as-prepared and powders annealed at temperatures between 250 and 550 °C was tested under UV and natural sunlight irradiation by decolorization of both anionic and cationic organic dyes, i.e., methyl orange (MO) and rhodamine B (RhB), as model pollutants. The tubular structure of the nanotubes was retained up to 250 °C, while at 350 °C and above, the nanotubes transformed into nanorods and nanoparticles. Depending on the annealing temperature, the TNTs consist of anatase, mixed anatase/brookite, or anatase/rutile phases. The bandgap of the as-prepared nanotubes is 3.04 eV, and it shifts towards the visible light region upon annealing. The X-ray photoelectron spectroscopy (XPS) results show the presence of titania and impurities including chlorine on the surface of the TNTs. The atomic ratio of Ti/O remains unchanged for the annealed TNTs, but the concentration of chlorine decreases with temperature. The photoluminescence (PL) indicate high electron-hole recombination for the as-prepared TNTs, probably due to the residual impurities, low crystallinity, and vacancies in the structure, while the highest photocurrent was observed for the TNT sample annealed at 450 °C. The TNTs induce a small degradation of the dyes under UV light; however, contrary to previous reports, complete decolorization of dyes is observed under sunlight. All TNT samples showed higher decolorization rates under sunlight irradiation than under UV light. The highest reaction rate for the TNT samples was obtained for the as-prepared TNT powder sample under sunlight using RhB (κ 1  = 1.29 h -1 ). This is attributed to the bandgap, specific surface area and the crystal structure of the nanotubes. The as-prepared TNTs performed most efficiently for decolorization of RhB and outperformed the reference anatase powder under sunlight irradiation. This could be attributed to the abundance of reactive sites, higher specific surface area, and degradation mechanism of RhB. These RBA TNT photocatalyst powders demonstrate a more efficient use of the sunlight spectrum, making them viable for environmental remediation.

Optical system for UV-laser technological equipment

NASA Astrophysics Data System (ADS)

Fedosov, Yuri V.; Romanova, Galina E.; Afanasev, Maxim Ya.

2017-09-01

Recently there has been an intensive development of intelligent industrial equipment that is highly automated and can be rapidly adjusted for certain details. This equipment can be robotics systems, automatic wrappers and markers, CNC machines and 3D printers. The work equipment considered is the system for selective curing of photopolymers using a UV-laser and UV-radiation in such equipment that leads to additional technical difficulties. In many cases for transporting the radiation from the laser to the point processed, a multi-mirror system is used: however, such systems are usually difficult to adjust. Additionally, such multi-mirror systems are usually used as a part of the equipment for laser cutting of metals using high-power IR-lasers. For the UV-lasers, using many mirrors leads to crucial radiation losses because of many reflections. Therefore, during the development of the optical system for technological equipment using UV-laser we need to solve two main problems: to transfer the radiation for the working point with minimum losses and to include the system for controlling/handling the radiation spot position. We introduce a system for working with UV-lasers with 450mW of power and a wavelength of 0.45 μm based on a fiber system. In our modelling and design, we achieve spot sizes of about 300 μm, and the designed optical and mechanical systems (prototypes) were manufactured and assembled. In this paper, we present the layout of the technological unit, the results of the theoretical modelling of some parts of the system and some experimental results.

Annealing dynamics of waveguide Bragg gratings: evidence of femtosecond laser induced colour centres.

PubMed

Dekker, P; Ams, M; Marshall, G D; Little, D J; Withford, M J

2010-02-15

There is still significant speculation regarding the nature of femtosecond laser induced index change in bulk glasses with colour centre formation and densification the main candidates. In the work presented here, we fabricated waveguide Bragg gratings in doped and undoped phosphate glasses and use these as a diagnostic for monitoring subtle changes in the induced refractive index during photo- and thermal annealing experiments. Reductions in grating strengths during such experiments were attributed to the annihilation of colour centres.

Growth and characterization of sol-gel derived CuGaO2 semiconductor thin films for UV photodetector application

NASA Astrophysics Data System (ADS)

Tsay, Chien-Yie; Chen, Ching-Lien

2017-06-01

In this study, a p-type wide-bandgap oxide semiconductor CuGaO2 thin film was grown on quartz substrate by sol-gel method. The authors report the influence of annealing temperature on the phase transformation, structural features, and electrical properties of sol-gel derived Cu-Ga-O thin films. At relatively low annealing temperatures (≤900 °C), the films are a mixture of CuGa2O4, CuGaO2, and CuO phases. At relatively high annealing temperatures (≥925 °C), the majority phase in the films is delafossite CuGaO2. All as-prepared Cu-Ga-O thin films exhibited p-type conductivity, as confirmed by Hall measurements. The mean electrical resistivity of the Cu-Ga-O films decreased from 3.54×104 Ω-cm to 1.35×102 Ω-cm and then increased slightly to 3.51×102 Ω-cm when the annealing temperature was increased from 850 °C to 950 °C. We found that annealing the Cu-based oxide thin films at 925 °C produced nearly phase-pure CuGaO2 thin films with good densification. Such thin films exhibited the best electrical properties: a mean electrical resistivity of 1.35×102 Ω-cm, and a mean hole concentration of 1.60×1016 cm-3. In addition, we also fabricated and characterized MSM-type CuGaO2 UV photodetectors on quartz substrates.

Amplified Self-replication of DNA Origami Nanostructures through Multi-cycle Fast-annealing Process

NASA Astrophysics Data System (ADS)

Zhou, Feng; Zhuo, Rebecca; He, Xiaojin; Sha, Ruojie; Seeman, Nadrian; Chaikin, Paul

We have developed a non-biological self-replication process using templated reversible association of components and irreversible linking with annealing and UV cycles. The current method requires a long annealing time, up to several days, to achieve the specific self-assembly of DNA nanostructures. In this work, we accomplished the self-replication with a shorter time and smaller replication rate per cycle. By decreasing the ramping time, we obtained the comparable replication yield within 90 min. Systematic studies show that the temperature and annealing time play essential roles in the self-replication process. In this manner, we can amplify the self-replication process to a factor of 20 by increasing the number of cycles within the same amount of time.

UV laser-induced fluorescence spectroscopy and laser Doppler flowmetry in the diagnostics of alopecia

NASA Astrophysics Data System (ADS)

Skomorokha, Diana P.; Pigoreva, Yulia N.; Salmin, Vladimir V.

2016-04-01

Development of optical biopsy methods has a great interest for medical diagnostics. In clinical and experimental studies it is very important to analyze blood circulation quickly and accurately, thereby laser Doppler flowmetry (LDF) is widely used. UV laser-induced fluorescence spectroscopy (UV LIFS) is express highly sensitive and widely-spread method with no destructive impact, high excitation selectivity and the possibility to use in highly scattering media. The goal of this work was to assess a correlation of UV laser-induced fluorescence spectroscopy and laser Doppler flowmetry parameters, and a possibility to identify or to differentiate various types of pathological changes in tissues according to their autofluorescence spectra. Three groups of patients with diffuse (symptomatic) alopecia, androgenic alopecia, and focal alopecia have been tested. Each groups consisted of not less than 20 persons. The measurements have been done in the parietal and occipital regions of the sculls. We used the original automated spectrofluorimeter to record autofluorescence spectra, and standard laser Doppler flowmeter BLF-21 (Transonic Systems, Inc., USA) to analyze the basal levels of blood circulation. Our results show that UV LIFS accurately distinguishes the zones with different types of alopecia. We found high correlation of the basal levels of blood circulation and the integrated intensity of autofluorescence in the affected tissue.

DNA Damage in Bone Marrow Cells Induced by Femtosecond and Nanosecond Ultraviolet Laser Pulses.

PubMed

Morkunas, Vaidotas; Gabryte, Egle; Vengris, Mikas; Danielius, Romualdas; Danieliene, Egle; Ruksenas, Osvaldas

2015-12-01

The purpose of this study was to investigate the possible genotoxic impact of new generation 205 nm femtosecond solid-state laser irradiation on the DNA of murine bone marrow cells in vitro, and to compare the DNA damage caused by both femtosecond and nanosecond UV laser pulses. Recent experiments of corneal stromal ablation in vitro and in vivo applying femtosecond UV pulses showed results comparable with or superior to those obtained using nanosecond UV lasers. However, the possible genotoxic effect of ultrashort laser pulses was not investigated. Mouse bone marrow cells were exposed to different doses of 205 nm femtosecond, 213 and 266 nm nanosecond lasers, and 254 nm UV lamp irradiation. The comet assay was used for the evaluation of DNA damage. All types of irradiation demonstrated intensity-dependent genotoxic impact. The DNA damage induced depended mainly upon wavelength rather than on other parameters such as pulse duration, repetition rate, or beam delivery to a target. Both 205 nm femtosecond and clinically applied 213 nm nanosecond lasers' pulses induced a comparable amount of DNA breakage in cells exposed to the same irradiation dose. To further evaluate the suitability of femtosecond UV laser sources for microsurgery, a separate investigation of the genotoxic and mutagenic effects on corneal cells in vitro and, particularly, in vivo is needed.

Imprinting on empty hard gelatin capsule shells containing titanium dioxide by application of the UV laser printing technique.

PubMed

Hosokawa, Akihiro; Kato, Yoshiteru; Terada, Katsuhide

2014-08-01

The purpose of this study was to examine the application of ultraviolet (UV) laser irradiation to printing hard gelatin capsule shells containing titanium dioxide (TiO2) and to clarify how the color strength of the printing by the laser could be controlled by the power of the irradiated laser. Hard gelatin capsule shells containing 3.5% TiO2 were used in this study. The capsules were irradiated with pulsed UV laser at a wavelength of 355 nm. The color strength of the printed capsule was determined by a spectrophotometer as total color difference (dE). The capsules could be printed gray by the UV laser. The formation of many black particles which were agglomerates of oxygen-defected TiO2 was associated with the printing. In the relationship between laser peak power of a pulse and dE, there were two inflection points. The lower point was the minimal laser peak power to form the black particles and was constant regardless of the dosage forms, for example film-coated tablets, soft gelatin capsules and hard gelatin capsules. The upper point was the minimal laser peak power to form micro-bubbles in the shells and was variable with the formulation. From the lower point to the upper point, the capsules were printed gray and the dE of the printing increased linearly with the laser peak power. Hard gelatin capsule shells containing TiO2 could be printed gray using the UV laser printing technique. The color strength of the printing could be controlled by regulating the laser energy between the two inflection points.

Intense Excitation Source of Blue-Green Laser.

DTIC Science & Technology

1985-10-15

plasma focus (DPF) can produce intense uv photons (200-300nm) which match the absorption spectra of both near uv and blue green dye lasers (300-400nm...existing blue green dye laser. On the other hand the dense- plasma focus (DPF) with new optical coupling has been designed and constructed. For the...optimization of the DPF device as the uv pumping light source, the velocity of current sheath and the formation of plasma focus have been measured as

Extended plasma channels created by UV laser in air and their application to control electric discharges

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zvorykin, V. D., E-mail: zvorykin@sci.lebedev.ru; Ionin, A. A.; Levchenko, A. O.

2015-02-15

Results are presented from a series of experimental and theoretical studies on creating weakly ionized extended plasma channels in atmospheric air by 248-nm UV laser radiation and their application to control long high-voltage discharges. The main mechanisms of air ionization by UV laser pulses with durations from 100 fs to 25 ns and intensities in the ranges of 3×10{sup 11}–1.5×10{sup 13} and 3×10{sup 6}–3×10{sup 11} W/cm{sup 2}, respectively, which are below the threshold for optical gas breakdown, as well as the main relaxation processes in plasma with a density of 10{sup 9}–10{sup 17} cm{sup −3}, are considered. It is shownmore » that plasma channels in air can be efficiently created by amplitude-modulated UV pulses consisting of a train of subpicosecond pulses producing primary photoelectrons and a long UV pulse suppressing electron attachment and sustaining the density of free electrons in plasma. Different modes of the generation and amplification of trains of subterawatt subpicosecond pulses and amplitude-modulated UV pulses with an energy of several tens of joules were implemented on the GARPUN-MTW hybrid Ti:sapphire-KrF laser facility. The filamentation of such UV laser beams during their propagation in air over distances of up to 100 m and the parameters of the corresponding plasma channels were studied experimentally and theoretically. Laser initiation of high-voltage electric discharges and control of their trajectories by means of amplitude-modulated UV pulses, as well as the spatiotemporal structure of breakdowns in air gaps with length of up to 80 cm, were studied.« less

Phase-selective vanadium dioxide (VO2) nanostructured thin films by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Masina, B. N.; Lafane, S.; Wu, L.; Akande, A. A.; Mwakikunga, B.; Abdelli-Messaci, S.; Kerdja, T.; Forbes, A.

2015-10-01

Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO2) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ˜43 °C, without any doping, paving the way to switchable transparency in optical materials at room temperature.

Laser diodes using InAlGaAs multiple quantum wells intermixed to varying extent

NASA Astrophysics Data System (ADS)

Alahmadi, Yousef; LiKam Wa, Patrick

2018-02-01

Bandgap-modified InAlGaAs/InP multi-quantum well lasers have been demonstrated using an impurity-free disordering technique. Varying degrees of disordering are achieved by rapidly annealing silicon nitride-capped samples at temperatures ranging from 730°C to 830°C for 20 s. The lasing wavelength shift resulting from the intermixing, ranges between 28.2 nm and 147.2 nm. As the annealing temperature is increased, the lasing threshold currents of the fabricated waveguide lasers increase from 25mA to 45mA, while the slope efficiency decrease from 0.101 W/A to 0.068 W/A, compared to a threshold current of 27.8 mA and a slope efficiency of 0.121 W/A for an as-grown laser diode.

Plasma ignition thresholds in UV laser ablation plumes

NASA Astrophysics Data System (ADS)

Clarke, P.; Dyer, P. E.; Key, P. H.; Snelling, H. V.

Ultraviolet (UV) laser thresholds for plasma ignition on solid targets predicted from electron-neutral collisional heating are generally much higher than those observed experimentally. This inconsistency was reconciled by Rosen, et al. [2], who showed that excited-state photoionization played a key role in long-pulse UV laser breakdown. Here we develop a related model but with emphasis on pulses of 10 ns duration. Experimental results are also reported for titanium, copper, silicon, and ferulic acid targets in vacuum, irradiated with combinations of the XeF, KrF, and ArF lasers for comparison with predictions.

Low-temperature Raman spectroscopy of copper and silver nanoparticles ion-synthesized in a silica glass and subjected to laser annealing

NASA Astrophysics Data System (ADS)

Kurbatova, N. V.; Galyautdinov, M. F.; Shtyrkov, E. I.; Nuzhdin, V. I.; Stepanov, A. L.

2010-06-01

The modification of the shape of ion-synthesized silver and copper nanoparticles in a silica glass during laser annealing has been studied for the first time by Raman spectroscopy at a temperature of 77 K. The laser annealing has been carried out for a wavelength of 694 nm at the edge of the plasmon absorption spectrum of nanoparticles. A comparison of the experimental spectra and the calculated modes of in-phase bending vibrations of the “harmonica” type in nanostrings of the corresponding metals has demonstrated their good agreement. The effects observed have been discussed from the standpoint of the size quantization of vibrations in metal nanowires. This methodical approach has made it possible to estimate the sizes of the Ag and Cu nanoparticles under the assumption that they have an elongated form; in this case, their average lengths are equal to 2.5 and 1.4 nm, respectively.

Low cost, patterning of human hNT brain cells on parylene-C with UV & IR laser machining.

PubMed

Raos, Brad J; Unsworth, C P; Costa, J L; Rohde, C A; Doyle, C S; Delivopoulos, E; Murray, A F; Dickinson, M E; Simpson, M C; Graham, E S; Bunting, A S

2013-01-01

This paper describes the use of 800nm femtosecond infrared (IR) and 248nm nanosecond ultraviolet (UV) laser radiation in performing ablative micromachining of parylene-C on SiO2 substrates for the patterning of human hNT astrocytes. Results are presented that support the validity of using IR laser ablative micromachining for patterning human hNT astrocytes cells while UV laser radiation produces photo-oxidation of the parylene-C and destroys cell patterning. The findings demonstrate how IR laser ablative micromachining of parylene-C on SiO2 substrates can offer a low cost, accessible alternative for rapid prototyping, high yield cell patterning.

Application of the UV laser printing technique to soft gelatin capsules containing titanium dioxide in the shells.

PubMed

Hosokawa, Akihiro; Kato, Yoshiteru

2012-03-01

The purpose of this study was to examine application of ultraviolet (UV) laser irradiation to printing soft gelatin capsules containing titanium dioxide (TiO(2)) in the shells and to study effect of UV laser power on the color strength of printing on the soft gelatin capsules. Size 6 Oval type soft gelatin capsules of which shells contained 0.685% TiO(2) and 0.005% ferric dioxide were used in this study. The capsules were irradiated pulsed UV laser at a wavelength 355 nm. The color strength of the printed capsules was determined by a spectrophotometer as total color difference (dE). The soft gelatin capsules which contained TiO(2) in the shells could be printed gray by the laser. Many black particles, which were associated with the printing, were formed at the colored parts of the shells. It was found that there were two inflection points in relationship between output laser energy of a pulse and dE. Below the lower point, the capsules were not printed. From the lower point to the upper point, the capsules were printed gray and total color difference of the printing increased linearly in proportion with the output laser energy. Beyond the upper point, total color difference showed saturation because of micro-bubbles formation at the laser irradiated spot. Soft gelatin capsules containing TiO(2) in the shells could be performed stable printing using the UV laser printing technique. Color strength of the printing could be controlled by regulating the laser energy between the two inflection points.

Fiber optic systems in the UV region

NASA Astrophysics Data System (ADS)

Huebner, Michael; Meyer, H.; Klein, Karl-Friedrich; Hillrichs, G.; Ruetting, Martin; Veidemanis, M.; Spangenberg, Bernd; Clarkin, James P.; Nelson, Gary W.

2000-05-01

Mainly due to the unexpected progress in manufacturing of solarization-reduced all-silica fibers, new fiber-optic applications in the UV-region are feasible. However, the other components like the UV-sources and the detector- systems have to be improved, too. Especially, the miniaturization is very important fitting to the small-sized fiber-optic assemblies leading to compact and mobile UV- analytical systems. Based on independent improvements in the preform and fiber processing, UV-improved fibers with different properties have been developed. The best UV-fiber for the prosed applications is selectable by its short and long-term spectral behavior, especially in the region from 190 to 350 nm. The spectrum of the UV-source and the power density in the fiber have an influence on the nonlinear transmission and the damaging level; however, hydrogen can reduce the UV-defect concentration. After determining the diffusion processes in the fiber, the UV-lifetime in commercially available all-silica fibers can be predicted. Newest results with light from deuterium-lamps, excimer- lasers and 5th harmonics of Nd:YAG laser will be shown. Many activities are in the field of UV-sources. In addition to new UV-lasers like the Nd:YAG laser at 213 nm, a new low- power deuterium-lamp with smaller dimensions has been introduced last year. Properties of this lamp will be discussed, taking into account some of the application requirements. Finally, some new applications with UV-fiber optics will be shown; especially the TLC-method can be improved significantly, combining a 2-row fiber-array with a diode-array spectrometer optimized for fiber-optics.

UV laser-induced cross-linking in peptides

PubMed Central

Leo, Gabriella; Altucci, Carlo; Bourgoin-Voillard, Sandrine; Gravagnuolo, Alfredo M.; Esposito, Rosario; Marino, Gennaro; Costello, Catherine E.; Velotta, Raffaele; Birolo, Leila

2013-01-01

RATIONALE The aim of this study was to demonstrate, and to characterize by high resolution mass spectrometry, that it is possible to preferentially induce covalent cross-links in peptides by using high energy femtosecond UV laser pulses. The cross-link is readily formed only when aromatic amino acids are present in the peptide sequence. METHODS Three peptides, xenopsin, angiotensin I, interleukin, individually or in combination, were exposed to high energy femtosecond UV laser pulses, either alone or in the presence of spin trapping molecules, the reaction products being characterized by high resolution mass spectrometry. RESULTS High resolution mass spectrometry and spin trapping strategies showed that cross-linking occurs readily, proceeds via a radical mechanism, and is the highly dominant reaction, proceeding without causing significant photo-damage in the investigated range of experimental parameters. CONCLUSIONS High energy femtosecond UV laser pulses can be used to induce covalent cross-links between aromatic amino acids in peptides, overcoming photo-oxidation processes, that predominate as the mean laser pulse intensity approaches illumination conditions achievable with conventional UV light sources. PMID:23754800

Preparation and Characterization of TiO2-Based Photocatalysts by Chemical Vapour Deposition

NASA Astrophysics Data System (ADS)

Nacevski, Goran; Marinkovski, Mirko; Tomovska, Radmila; Fajgar, Radek

In the present work, a novel technique for the preparation of TiO2-based photocatalysts modified with SiO2 is presented, using a pulsed ArF laser to induce a chemical vapor deposition process. The irradiated gas mixture was composed of TiCl4/SiCl4 precursors in excess of oxygen. Laser irradiation at 193 nm with a repetition frequency of 10 Hz induced the deposition of thin nano-sized mixed oxide films. In order to improve the photocatalytic activity of the catalysts and to expand the activity from the UV to the visible part of the spectrum, doping of the catalysts with chromium oxides was performed. For that aim, the same technique of catalyst preparation was used, irradiating the same gas mixture with the addition of chromyl chloride as Cr precursor. The thin films prepared were annealed up to 500°C in order to remove crystal defects, which could be responsible for poor photocatalytic activity. The dependence of structure and properties on reaction process and irradiation conditions (laser energy and fluence, precursors pressure) were examined. The main aim was to find the best conditions for the production of highly photoactive catalysts and to decrease deactivation processes during the photo-oxidation. The composition, structure and morphology of the oxide catalysts prepared were studied by various spectroscopies, electron microscopy and diffraction techniques.

The Reduction of TED in Ion Implanted Silicon

NASA Astrophysics Data System (ADS)

Jain, Amitabh

2008-11-01

The leading challenge in the continued scaling of junctions made by ion implantation and annealing is the control of the undesired transient enhanced diffusion (TED) effect. Spike annealing has been used as a means to reduce this effect and has proven successful in previous nodes. The peak temperature in this process is typically 1050 °C and the time spent within 50 °C of the peak is of the order of 1.5 seconds. As technology advances along the future scaling roadmap, further reduction or elimination of the enhanced diffusion effect is necessary. We have shown that raising the peak temperature to 1175 °C or more and reduction of the anneal time at peak temperature to less than a millisecond is effective in eliminating enhanced diffusion. We show that it is possible to employ a sequence of millisecond anneal followed by spike anneal to obtain profiles that do not exhibit gradient degradation at the junction and have junction depth and sheet resistance appropriate to the needs of future technology nodes. We have implemented millisecond annealing using a carbon dioxide laser to support high-volume manufacturing of 65 nm microprocessors and system-on-chip products. We further show how the use of molecular ion implantation to produce amorphousness followed by laser annealing to produce solid phase epitaxial regrowth results in junctions that meet the shallow depth and abruptness requirements of the 32 nm node.

The role of annealing temperature variation on ZnO nanorods array deposited on TiO2 seed layer

NASA Astrophysics Data System (ADS)

Asib, N. A. M.; Aadila, A.; Afaah, A. N.; Rusop, M.; Khusaimi, Z.

2018-05-01

Seed layer of Titanium dioxide (TiO2) by sol-gel spin coating technique were coated on glass substrate to grow Zinc oxide nanorods (ZNR) by solution-immersion method. The fabricated ZNR were annealed at various temperatures ranged from 400 to 600° C. FESEM images revealed that smaller ZNR were densely grown at optimum temperature of 450 and 500°C. Meanwhile, for all samples a dominant (0 0 2) diffraction peak of ZNR recorded by XRD patterns was at 34.4° which corresponding to hexagonal ZNR with a wurtzite structure. UV-Vis absorbance spectra showed the maximum absorption properties at UV region were detected at 450 and 500°C. The samples also showed high absorbance values at visible region.

Synthesis Of Noble Metal Nanoparticle Composite Glasses Using Low Energy Ion Beam Mixing

NASA Astrophysics Data System (ADS)

Varma, Ranjana S.; Kothari, D. C.; Mahadkar, A. G.; Kulkarni, N. A.; Kanjilal, D.; Kumar, P.

2010-12-01

Carbon coated thin films of Cu or Au on fused silica glasses have been irradiated using 100 keV Ar+ ions at different fluences ranging from 1×1013 to 1×1016 ion/cm2. In this article, we explore a route to form noble metal nanoparticles in amorphous glass matrices without post irradiation annealing using low energy ion beam mixing where nuclear energy loss process is dominant. Optical and structural properties were studied using UV-Vis-NIR absorbance spectroscopy and Glancing angle X-ray Diffraction (GXRD). Results showed that Cu and Au nanoparticles are formed at higher fluence of 1×1016 ion/cm2 used in this work without annealing. The diameters of metal nanoparticles obtained from UV-Vis NIR and GXRD are in agreement.

Investigation of optical fibers for high-repetition-rate, ultraviolet planar laser-induced fluorescence of OH.

PubMed

Hsu, Paul S; Kulatilaka, Waruna D; Roy, Sukesh; Gord, James R

2013-05-01

We investigate the fundamental transmission characteristics of nanosecond-duration, 10 kHz repetition rate, ultraviolet (UV) laser pulses through state-of-the-art, UV-grade fused-silica fibers being used for hydroxyl radical (OH) planar laser-induced fluorescence (PLIF) imaging. Studied in particular are laser-induced damage thresholds (LIDTs), nonlinear absorption, and optical transmission stability during long-term UV irradiation. Solarization (photodegradation) effects are significantly enhanced when the fiber is exposed to high-repetition-rate, 283 nm UV irradiation. For 10 kHz laser pulses, two-photon absorption is strong and LIDTs are low, as compared to those of laser pulses propagating at 10 Hz. The fiber characterization results are utilized to perform single-laser-shot, OH-PLIF imaging in pulsating turbulent flames with a laser that operates at 10 kHz. The nearly spatially uniform output beam that exits a long multimode fiber becomes ideal for PLIF measurements. The proof-of-concept measurements show significant promise for extending the application of a fiber-coupled, high-speed OH-PLIF system to harsh environments such as combustor test beds, and potential system improvements are suggested.

Annealing Temperature Dependent Structural and Optical Properties of RF Sputtered ZnO Thin Films.

PubMed

Sharma, Shashikant; Varma, Tarun; Asokan, K; Periasamy, C; Boolchandani, Dharmendar

2017-01-01

This work investigates the effect of annealing temperature on structural and optical properties of ZnO thin films grown over Si 100 and glass substrates using RF sputtering technique. Annealing temperature has been varied from 300 °C to 600 °C in steps of 100, and different microstructural parameters such as grain size, dislocation density, lattice constant, stress and strain have been evaluated. The structural and surface morphological characterization has been done using X-ray Diffraction (XRD) and Scanning Electron Microscope (SEM). XRD analysis reveals that the peak intensity of 002 crystallographic orientation increases with increased annealing temperature. Optical characterization of deposited films have been done using UV-Vis-NIR spectroscopy and photoluminescence spectrometer. An increase in optical bandgap of deposited ZnO thin films with increasing annealing temperature has been observed. The average optical transmittance was found to be more than 85% for all deposited films. Photoluminiscense spectra (PL) suggest that the crystalline quality of deposited film has increased at higher annealing temperature.

Effect of annealing temperature on optical and electrical properties of ZrO2-SnO2 based nanocomposite thin films

NASA Astrophysics Data System (ADS)

Anitha, V. S.; Lekshmy, S. Sujatha; Berlin, I. John; Joy, K.

2014-01-01

Transparent nanocomposite ZrO2-SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2-SnO2 films can be used in many applications and in optoelectronic devices.

Synthesis and annealing study of RF sputtered ZnO thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Singh, Shushant Kumar, E-mail: singhshushant86@gmail.com; Sharma, Himanshu; Singhal, R.

2016-05-23

In this paper, we have investigated the annealing effect on optical and structural properties of ZnO thin films, synthesized by RF magnetron sputtering. ZnO thin films were deposited on glass and silicon substrates simultaneously at a substrate temperature of 300 °C using Argon gas in sputtering chamber. Thickness of as deposited ZnO thin film was found to be ~155 nm, calculated by Rutherford backscattering spectroscopy (RBS). These films were annealed at 400 °C and 500 °C temperature in the continuous flow of oxygen gas for 1 hour in tube furnace. X-ray diffraction analysis confirmed the formation of hexagonal wurtzite structuremore » of ZnO thin film along the c-axis (002) orientation. Transmittance of thin films was increased with increasing the annealing temperature estimated by UV-visible transmission spectroscopy. Quality and texture of the thin films were improved with annealing temperature, estimated by Raman spectroscopy.« less

An Experimental Study on Micro Clinching of Metal Foils with Cutting by Laser Shock Forming.

PubMed

Wang, Xiao; Li, Cong; Ma, Youjuan; Shen, Zongbao; Sun, Xianqing; Sha, Chaofei; Gao, Shuai; Li, Liyin; Liu, Huixia

2016-07-13

This paper describes a novel technique for joining similar and dissimilar metal foils, namely micro clinching with cutting by laser shock forming. A series of experiments were conducted to study the deformation behavior of single layer material, during which many important process parameters were determined. The process window of the 1060 pure aluminum foils and annealed copper foils produced by micro clinching with cutting was analyzed. Moreover, similar material combination (annealed copper foils) and dissimilar material combination (1060 pure aluminum foils and 304 stainless steel foils) were successfully achieved. The effect of laser energy on the interlock and minimum thickness of upper foils was investigated. In addition, the mechanical strength of different material combinations joined by micro clinching with cutting was measured in single lap shearing tests. According to the achieved results, this novel technique is more suitable for material combinations where the upper foil is thicker than lower foil. With the increase of laser energy, the interlock increased while the minimum thickness of upper foil decreased gradually. The shear strength of 1060 pure aluminum foils and 304 stainless steel foils combination was three times as large as that of 1060 pure aluminum foils and annealed copper foils combination.

Post-growth annealing of germanium-tin alloys using pulsed excimer laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Lanxiang; Wang, Wei; Zhou, Qian

2015-07-14

We investigate the impact of pulsed excimer laser anneal on fully strained germanium-tin alloys (Ge{sub 1−x}Sn{sub x}) epitaxially grown on Ge substrate by molecular beam epitaxy. Using atomic force microscopy, X-ray diffraction, transmission electron microscopy, and X-ray photoelectron spectroscopy, the morphological and compositional evolution of Ge{sub 1−x}Sn{sub x} with Sn content up to 17% after annealing using various conditions is studied. Ge{sub 0.83}Sn{sub 0.17} samples annealed at 80 mJ/cm{sup 2} or 150 mJ/cm{sup 2} have no observable changes with respect to the as-grown sample. However, Ge{sub 0.83}Sn{sub 0.17} samples annealed at 250 mJ/cm{sup 2} or 300 mJ/cm{sup 2} have Sn-richmore » islands on the surface, which is due to Sn segregation in the compressively strained epitaxial film. For Ge{sub 0.89}Sn{sub 0.11}, significant Sn redistribution occurs only when annealed at 300 mJ/cm{sup 2}, indicating that it has better thermal stability than Ge{sub 0.83}Sn{sub 0.17}. A mechanism is proposed to explain the formation of Sn-rich islands and Sn-depleted regions.« less

UV waveguides light fabricated in fluoropolymer CYTOP by femtosecond laser direct writing.

PubMed

Hanada, Yasutaka; Sugioka, Koji; Midorikawa, Katsumi

2010-01-18

We have fabricated optical waveguides inside the UV-transparent polymer, CYTOP, by femtosecond laser direct writing for propagating UV light in biochip applications. Femtosecond laser irradiation is estimated to increase the refractive index of CYTOP by 1.7 x 10(-3) due to partial bond breaking in CYTOP. The waveguide in CYTOP has propagation losses of 0.49, 0.77, and 0.91 dB/cm at wavelengths of 632.8, 355, and 266 nm, respectively.

Quenched-in defects in flashlamp-annealed silicon

NASA Technical Reports Server (NTRS)

Borenstein, J. T.; Jones, J. T.; Corbett, J. W.; Oehrlein, G. S.; Kleinhenz, R. L.

1986-01-01

Deep levels introduced in boron-doped silicon by heat-pulse annealing with a tungsten-halogen flashlamp are investigated using deep-level transient spectroscopy. Two majority-carrier trapping levels in the band gap, at Ev + 0.32 eV and at Ev + 0.45 eV, are observed. These results are compared to those obtained by furnace-quenching and laser-annealing studies. Both the position in the gap and the annealing kinetics of the hole trap at Ev + 0.45 eV suggest that this center is due to an interstitial iron impurity in the lattice. The deep levels are not consistently observed in all flashlamp-annealed Si crystals utilized.

Thermoluminescent properties of nanocrystalline ZnTe thin films: Structural and morphological studies

NASA Astrophysics Data System (ADS)

Rajpal, Shashikant; Kumar, S. R.

2018-04-01

Zinc Telluride (ZnTe) is a binary II-VI direct band gap semiconducting material with cubic structure and having potential applications in different opto-electronic devices. Here we investigated the effects of annealing on the thermoluminescence (TL) of ZnTe thin films. A nanocrystalline ZnTe thin film was successfully electrodeposited on nickel substrate and the effect of annealing on structural, morphological, and optical properties were studied. The TL emission spectrum of as deposited sample is weakly emissive in UV region at ∼328 nm. The variation in the annealing temperature results into sharp increase in emission intensity at ∼328 nm along with appearance of a new peak at ∼437 nm in visible region. Thus, the deposited nanocrystalline ZnTe thin films exhibited excellent thermoluminescent properties upon annealing. Furthermore, the influence of annealing (annealed at 400 °C) on the solid state of ZnTe were also studied by XRD, SEM, EDS, AFM. It is observed that ZnTe thin film annealed at 400 °C after deposition provide a smooth and flat texture suited for optoelectronic applications.

Comparison of Internal Energy Distributions of Ions Created by Electrospray Ionization and Laser Ablation-Liquid Vortex Capture-Electrospray Ionization

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cahill, John F.; Kertesz, Vilmos; Ovchinnikova, Olga S.

2015-06-27

Recently a number of techniques have combined laser ablation with liquid capture for mass spectrometry spot sampling and imaging applications. The newly developed non-contact liquid-vortex capture probe has been used to efficiently collect 355 nm UV laser ablated material in a continuous flow solvent stream in which the captured material dissolves and then undergoes electrospray ionization. This sampling and ionization approach has produced what appear to be classic electrospray ionization spectra; however, the softness of this sampling/ionization process versus simple electrospray ionization has not been definitely determined. A series of benzlypyridinium salts, known as thermometer ions, were used to comparemore » internal energy distributions between electrospray ionization and the UV laser ablation liquid-vortex capture probe electrospray combination. Measured internal energy distributions were identical between the two techniques, even with differences in laser fluence (0.7-3.1 J cm-2) and when using UV-absorbing or non-UV-absorbing sample substrates. This data indicates ions formed directly by UV laser ablation, if any, are likely an extremely small constituent of the total ion signal observed. Instead, neutral molecules, clusters or particulates ejected from the surface during laser ablation, subsequently captured and dissolved in the flowing solvent stream then electrosprayed are the predominant source of ion signal observed. The electrospray ionization process used controls the softness of the technique.« less

Excimer laser beam delivery systems for medical applications

NASA Astrophysics Data System (ADS)

Kubo, Uichi; Hashishin, Yuichi; Okada, Kazuyuki; Tanaka, Hiroyuki

1993-05-01

We have been doing the basic experiments of UV laser beams and biotissue interaction with both KrF and XeCl lasers. However, the conventional optical fiber can not be available for power UV beams. So we have been investigating about UV power beam delivery systems. These experiments carry on with the same elements doped quartz fibers and the hollow tube. The doped elements are OH ion, chlorine and fluorine. In our latest work, we have tried ArF excimer laser and biotissue interactions, and the beam delivery experiments. From our experimental results, we found that the ArF laser beam has high incision ability for hard biotissue. For example, in the case of the cow's bone incision, the incision depth by ArF laser was ca.15 times of KrF laser. Therefore, ArF laser would be expected to harden biotissue therapy as non-thermal method. However, its beam delivery is difficult to work in this time. We will develop ArF laser beam delivery systems.

Investigation of room temperature UV emission of ZnO films with different defect densities induced by laser irradiation.

PubMed

Zhao, Yan; Jiang, Yijian

2010-08-01

We studied the room temperature UV emission of ZnO films with different defect densities which is fabricated by KrF laser irradiation process. It is shown room temperature UV photoluminescence of ZnO film is composed of contribution from free-exciton (FX) recombination and its longitudinal-optical phonon replica (FX-LO) (1LO, 2LO). With increase of the defect density, the FX emission decreased and FX-LO emission increased dramatically; and the relative strengths of FX to FX-LO emission intensities determine the peak position and intensity of UV emission. What is more, laser irradiation with moderate energy density could induce the crystalline ZnO film with very flat and smooth surface. This investigation indicates that KrF laser irradiation could effectively modulate the exciton emission and surface morphology, which is important for the application of high performance of UV emitting optoelectronic devices. Copyright 2010 Elsevier B.V. All rights reserved.

Single-mode, All-Solid-State Nd:YAG Laser Pumped UV Converter

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Armstrong, Darrell, J.; Edwards, William C.; Singh, Upendra N.

2008-01-01

In this paper, the status of a high-energy, all solid-state Nd:YAG laser pumped nonlinear optics based UV converter development is discussed. The high-energy UV transmitter technology is being developed for ozone sensing applications from space based platforms using differential lidar technique. The goal is to generate greater than 200 mJ/pulse with 10-50 Hz PRF at wavelengths of 308 nm and 320 nm. A diode-pumped, all-solid-state and single longitudinal mode Nd:YAG laser designed to provide conductively cooled operation at 1064 nm has been built and tested. Currently, this pump laser provides an output pulse energy of >1 J/pulse at 50 Hz PRF and a pulsewidth of 22 ns with an electrical-to-optical system efficiency of greater than 7% and a M(sup 2) value of <2. The single frequency UV converter arrangement basically consists of an IR Optical Parametric Oscillator (OPO) and a Sum Frequency Generator (SFG) setups that are pumped by 532 nm wavelength obtained via Second Harmonic Generation (SHG). In this paper, the operation of an inter cavity SFG with CW laser seeding scheme generating 320 nm wavelength is presented. Efforts are underway to improve conversion efficiency of this mJ class UV converter by modifying the spatial beam profile of the pump laser.

Plume characteristics and dynamics of UV and IR laser-desorbed oligonucleotides.

PubMed

Merrigan, Tony L; Timson, David J; Hunniford, C Adam; Catney, Martin; McCullough, Robert W

2012-05-01

Laser desorption of dye-tagged oligonucleotides was studied using laser-induced fluorescence imaging. Desorption with ultra violet (UV) and infra-red (IR) lasers resulted in forward directed plumes of molecules. In the case of UV desorption, the initial shot desorbed approximately seven-fold more material than subsequent shots. In contrast, the initial shot in IR desorption resulted in the ejection of less material compared to subsequent shots and these plumes had a component directed along the path of the laser. Thermal equilibrium of the molecules in the plume was achieved after approximately 25 μs with a spread in molecular temperature which was described by a modified Maxwell-Boltzmann equation. Copyright © 2012 Elsevier B.V. All rights reserved.

Investigation of holmium-doped zirconium oxide ceramic phosphor as an ultraviolet wavelength-discriminating laser beam viewer

NASA Astrophysics Data System (ADS)

Yamanoi, Kohei; Hori, Tatsuhiro; Minami, Yuki; Empizo, Melvin John F.; Luong, Mui Viet; Shiro, Atsushi; Watanabe, Jun; Iwano, Keisuke; Iwasa, Yuki; Cadatal-Raduban, Marilou; Gabayno, Jacque Lynn; Shimizu, Toshihiko; Sarukura, Nobuhiko; Norimatsu, Takayoshi

2018-01-01

We report the fluorescence spectra of ZrO2 and trivalent Ho-doped ZrO2 ceramics under ultraviolet (UV) excitation at 213, 266, and 355 nm wavelengths. The Ho3+-doped ZrO2 ceramics exhibited varying fluorescence color tones depending on the excitation wavelength used. The different color tones match the fluorescence spectrum characteristics at each excitation wavelength. Our results demonstrate that Ho3+-doped ZrO2 ceramics can discriminate between UV light, specifically the third, fourth, and fifth harmonics of a Nd:YAG laser. It can potentially be used for developing UV laser beam viewers to aid laser alignment.

Fine-pitched microgratings encoded by interference of UV femtosecond laser pulses.

PubMed

Kamioka, Hayato; Miura, Taisuke; Kawamura, Ken-ichi; Hirano, Masahiro; Hosono, Hideo

2002-01-01

Fine-pitched microgratings are encoded on fused silica surfaces by a two-beam laser interference technique employing UV femtosecond pulses from the third harmonics of a Ti:sapphire laser. A pump and prove method utilizing a laser-induced optical Kerr effect or transient optical absorption change has been developed to achieve the time coincidence of the two pulses. Use of the UV pulses makes it possible to narrow the grating pitches to an opening as small as 290 nm, and the groove width of the gratings is of nanoscale size. The present technique provides a novel opportunity for the fabrication of periodic nanoscale structures in various materials.

Effect of annealing induced residual stress on the resonance frequency of SiO2 microcantilevers

NASA Astrophysics Data System (ADS)

Balasubramanian, S.; Prabakar, K.; Tripura Sundari, S.

2018-04-01

In the present work, effect of residual stress, induced due to annealing of SiO2 microcantilevers (MCs) on their resonance frequency is studied. SiO2MCs of various dimensions were fabricated using direct laser writer & wet chemical etching method and were annealed at 800 °C in oxygen environment, post release. The residual stress was estimated from the deflection profile of the MCs measured using 3D optical microscope, before and after annealing. Resonance frequency of the MCs was measured using nano-vibration analyzer and was found to change after annealing. Further the frequency shift was found to depend on the MC dimensions. This is attributed to the large stress gradients induced by annealing and associated stiffness changes.

Novel Designs and Coupling Schemes for Affordable High Energy Laser Modules

DTIC Science & Technology

2007-09-28

possibility of single polarization operation of phase- locked multicore fiber lasers and amplifiers. 5.5. UV...transverse direction (propagation and polarization vectors shown as solid arrows and dashed lines, respectively) having a dipole-like wave front from an...31 5.4. Phase Locking in Monolithic Multicore Fiber Laser..................................................... 38 5.5. UV

Phase-selective vanadium dioxide (VO{sub 2}) nanostructured thin films by pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Masina, B. N., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz; School of Physics, University of KwaZulu-Natal, Private Bag X54001, Durban 4000; Lafane, S., E-mail: BMasina@csir.co.za, E-mail: slafane@cdta.dz

2015-10-28

Thin films of monoclinic nanostructured vanadium dioxide are notoriously difficult to produce in a selective manner. To date, post-annealing, after pulsed laser deposition (PLD), has been used to revert the crystal phase or to remove impurities, and non-glass substrates have been employed, thus reducing the efficacy of the transparency switching. Here, we overcome these limitations in PLD by optimizing a laser-ablation and deposition process through optical imaging of the laser-induced plasma. We report high quality monoclinic rutile-type vanadium dioxide (VO{sub 2}) (M1) nanoparticles without post-annealing, and on a glass substrate. Our samples demonstrate a reversible metal-to-insulator transition at ∼43 °C, withoutmore » any doping, paving the way to switchable transparency in optical materials at room temperature.« less

Magnetic-Force-Assisted Straightening of Bent Mild Steel Strip by Laser Irradiation

NASA Astrophysics Data System (ADS)

Dutta, Polash P.; Kalita, Karuna; Dixit, Uday S.; Liao, Hengcheng

2017-12-01

This study proposes a technique to straighten bent metallic strips with magnetic-force-assisted laser irradiation. Experiments were conducted for three different types of mechanically-bent mild strips. The first type was bent strips without any heat treatment. The second type was stress-relieved and third type was subcritical-annealed bent strips. These strips were straightened following different schemes of laser irradiation sequence to understand the performance of straightening. A parametric study was conducted by varying laser power and scanning speed. Micro-hardness, tensile test, Charpy impact test and microstructure after straightening were also studied. Different scanning schemes provided different microstructures and mechanical properties. Any serious deterioration in the quality of straightened strips was not noticed. Overall, subcritical-annealed bent strips provided the best performance in straightening. The proposed straightening scheme has potential of becoming an industrial practice.

A Novel High Efficient Laser Transmitter Design for a Space-borne Ozone Differential Lidar (DIAL)

NASA Technical Reports Server (NTRS)

Edwards, W. C.; Chen, S.; Petway, L. B.; Marsh, W. D.; Storm, M. E.; Barnes, J. C.

2000-01-01

Development of a UV laser transmitter capable of operating from a space platform is a critical step in enabling global earth observations of aerosols and ozone at resolutions greater than current passive instrument capabilities. Tropospheric chemistry is well recognized as the next frontier for global atmospheric measurement. NASA Langley Research Center (LaRC) and the Canadian Space Agency (CSA) have jointly studied the requirements for a satellite based, global ozone monitoring instrument. The study, called Ozone Research using Advanced Cooperative Lidar Experiment (ORACLE) has defined the Differential Absorption Lidar (DIAL) instrument performance, weight and power, and configuration requirements for a space based measurement. In order to achieve the measurement resolution and acceptable signal-to-noise from lidar returns, 500mJ/pulse (5 Watts average power) is required at both 305-308nm and 315-320nm wavelengths. These are consecutive pulses, in a 10 Hz, double-pulsed format. The two wavelengths are used as the on- and off-lines for the ozone DIAL measurement. NASA Langley is currently developing technology for a UV laser transmitter capable of meeting the ORACLE requirements. Experimental efforts to date have shown that the UV generation scheme is viable, and that energies greater than l00mJ/pulse are possible. In this paper, we will briefly discuss the down select process for the proposed laser design, the study effort to date and the laser system design, including both primary and alternate approaches. We will describe UV laser technology that minimizes the total number of optical components (for enhanced reliability) as well as the number of UV coated optics required to transmit the light from the laser (for enhanced optical damage resistance). While the goal is to develop a laser that will produce 500 mJ of energy, we will describe an optional design that will produce output energies between 100 - 200 mJ/unit and techniques for combining multiple laser modules in order to transmit a minimum of 500mJ of UV energy in each pulse of the on- and off-line pulse pairs. This modular laser approach provides redundancy and significantly reduces development time, risk and cost when compared to the development of a single, 500mJ double-pulsed laser subsystem. Finally, we will summarize the laser development effort to date, including results that include the highest known UV energy ( 130 mJ at 320nm) ever produced by a solid-state laser operating in this wavelength region.

Effects of processing and dopant on radiation damage removal in silicon solar cells

NASA Technical Reports Server (NTRS)

Weinberg, I.; Brandhorst, H. W., Jr.; Swartz, C. K.; Mehta, S.

1982-01-01

Gallium and boron doped silicon solar cells, processed by ion-implantation followed by either laser or furnace anneal were irradiated by 1 MeV electrons and their post-irradiation recovery by thermal annealing determined. During the post-irradiation anneal, gallium-doped cells prepared by both processes recovered more rapidly and exhibited none of the severe reverse annealing observed for similarly processed 2 ohm-cm boron doped cells. Ion-implanted furnace annealed 0.1 ohm-cm boron doped cells exhibited the lowest post-irradiation annealing temperatures (200 C) after irradiation to 5 x 10 to the 13th e(-)/sq cm. The drastically lowered recovery temperature is attributed to the reduced oxygen and carbon content of the 0.1 ohm-cm cells. Analysis based on defect properties and annealing kinetics indicates that further reduction in annealing temperature should be attainable with further reduction in the silicon's carbon and/or divacancy content after irradiation.

Vacuum isostatic micro/macro molding of PTFE materials for laser beam shaping in environmental applications: large scale UV laser water purification

NASA Astrophysics Data System (ADS)

Lizotte, Todd; Ohar, Orest

2009-08-01

Accessibility to fresh clean water has determined the location and survival of civilizations throughout the ages [1]. The tangible economic value of water is demonstrated by industry's need for water in fields such as semiconductor, food and pharmaceutical manufacturing. Economic stability for all sectors of industry depends on access to reliable volumes of good quality water. As can be seen on television a nation's economy is seriously affected by water shortages through drought or mismanagement and as such those water resources must therefore be managed both for the public interest and the economic future. For over 50 years ultraviolet water purification has been the mainstay technology for water treatment, killing potential microbiological agents in water for leisure activities such as swimming pools to large scale waste water treatment facilities where the UV light photo-oxidizes various pollutants and contaminants. Well tailored to the task, UV provides a cost effective way to reduce the use of chemicals in sanitization and anti-biological applications. Predominantly based on low pressure Hg UV discharge lamps, the system is plagued with lifetime issues (~1 year normal operation), the last ten years has shown that the technology continues to advance and larger scale systems are turning to more advanced lamp designs and evaluating solidstate UV light sources and more powerful laser sources. One of the issues facing the treatment of water with UV lasers is an appropriate means of delivering laser light efficiently over larger volumes or cross sections of water. This paper examines the potential advantages of laser beam shaping components made from isostatically micro molding microstructured PTFE materials for integration into large scale water purification and sterilization systems, for both lamps and laser sources. Applying a unique patented fabrication method engineers can form micro and macro scale diffractive, holographic and faceted reflective structures into fused and semi-fused PTFE materials and compounds for use in UV Reactors. The materials unique attributes provide an unusual but effective hybrid element, by combining Lambertian diffusion and spectral reflective attributes. This paper will provide examples of the applications where this technology could be applied and typical constructions. An overview of UV sources commonly used in water treatment, including high power UV lasers and solid state UV light sources will be discussed. The paper will summarize how beam shaping elements produced in PTFE materials would provide further benefits to the emerging water disinfection or treatment market.

Average power scaling of UV excimer lasers drives flat panel display and lidar applications

NASA Astrophysics Data System (ADS)

Herbst, Ludolf; Delmdahl, Ralph F.; Paetzel, Rainer

2012-03-01

Average power scaling of 308nm excimer lasers has followed an evolutionary path over the last two decades driven by diverse industrial UV laser microprocessing markets. Recently, a new dual-oscillator and beam management concept for high-average power upscaling of excimer lasers has been realized, for the first time enabling as much as 1.2kW of stabilized UV-laser average output power at a UV wavelength of 308nm. The new dual-oscillator concept enables low temperature polysilicon (LTPS) fabrication to be extended to generation six glass substrates. This is essential in terms of a more economic high-volume manufacturing of flat panel displays for the soaring smartphone and tablet PC markets. Similarly, the cost-effective production of flexible displays is driven by 308nm excimer laser power scaling. Flexible displays have enormous commercial potential and can largely use the same production equipment as is used for rigid display manufacturing. Moreover, higher average output power of 308nm excimer lasers aids reducing measurement time and improving the signal-to-noise ratio in the worldwide network of high altitude Raman lidar stations. The availability of kW-class 308nm excimer lasers has the potential to take LIDAR backscattering signal strength and achievable altitude to new levels.

Phase-dependent ultrafast third-order optical nonlinearities in metallophthalocyanine thin films

NASA Astrophysics Data System (ADS)

Kumar, Samir; Anil Kumar, K. V.; Dharmaprakash, S. M.; Das, Ritwick

2016-09-01

We present a comprehensive study on the impact of phase transformations of metallophthalocyanine thin films on their third-order nonlinear optical (NLO) properties. The metallophthalocyanine thin films are prepared by thermally evaporating the commercially available Copper(II)2,9,16,23-Tetra-tert-butyl-29H,31H-phthalocyanine (CuPc) and Zinc(II) 2,9,16,23-Tetra-tert-butyl-29H,31H-phthalocyanine (ZnPc) powder on glass substrate. Thermal annealing causes a phase transformation which has a distinct signature in powder X-ray diffraction and UV-Vis-NIR spectroscopy. The NLO characteristics which include nonlinear refractive index n2, as well as nonlinear absorption coefficient (βeff), were measured by using a single beam Z-scan technique. An ultrashort pulsed fiber laser emitting femtosecond pulses (Δτ ≈ 250 fs) at 1064 nm central wavelength is used as a source for the Z-scan experiment. The βeff values in as prepared thin films were ascertained to be smaller as compared to the annealed one due to the smaller value of saturation intensity (Is) which, in turn, is a consequence of ground-state bleaching in the thermally unstable amorphous state of the molecule. Interestingly, the nonlinear refractive indices bear opposite sign for CuPc and ZnPc. The variations in the third-order nonlinearity in CuPc and ZnPc are discussed in terms of molecular packing and geometries of metallophthalocyanine molecules.

Matrix isolation infrared spectra of O2 and N2 insertion reactions with atomic uranium

NASA Astrophysics Data System (ADS)

Hunt, Rodney D.; Toth, L. Mac; Yustein, Jason T.; Andrews, Lester

1993-10-01

Laser ablation of refractory metals can be an effective source of vapor for matrix isolation IR studies. This combination of techniques was used for the first time to study the mechanisms of U vapor reactions with atmospheric components. U atoms and O2 were codeposited with excess Ar at 12 K. The dominant codeposition products were UO2 and UO3. In contrast, the UO yield was always small because UO2 is formed by an insertion mechanism. This mechanism was verified in the 16O2/18O2 experiments which failed to produce 16OU18O. The effects of UV photolysis and matrix annealings were also examined. The U atoms and O2 reaction requires little or no activation energy since UO2 was formed from cold reagents. New charge-transfer species, (UO2+2)(O2-2) and (UO+2)(O-2), and a weak complex, UO3-O2, were primarily produced under conditions which favored further O2 reactions. Similar U atom and N2 experiments produced only linear NUN which is also produced by an insertion mechanism. This U reaction represents the first time that atom was observed breaking and inserting into the triple bond of N2. Photolysis dramatically increased the NUN yield by 3-fold. Matrix annealings produced weak UN2-N2 and UN2-2N2 complexes.

Plume Image Profiling of UV Laser Desorbed Biomolecules

NASA Astrophysics Data System (ADS)

Merrigan, T. L.; Hunniford, C. A.; Timson, D. J.; Catney, M.; McCullough, R. W.

2008-12-01

An experimental system, based upon the techniques of UV and IR laser desorption with time of flight mass spectrometry, has been constructed to enable the production and characterization of neutral biomolecular targets. The feasibility of the laser desorption technique for the purpose of radiation interaction experiments is investigated here. Fluorescent dye tagging and laser induced fluorescence imaging has been used to help characterize the laser produced plumes of biomolecules revealing their spatial density profiles and temporal evolution. Peak target thicknesses of 2×1012 molecules cm-2 were obtained 30 μs after laser desorption.

Laser and optical system for laser assisted hydrogen ion beam stripping at SNS

DOE PAGES

Liu, Y.; Rakhman, A.; Menshov, A.; ...

2016-12-01

A high-efficiency laser assisted hydrogen ion (H-) beam stripping was recently successfully carried out in the Spallation Neutron Source (SNS) accelerator. The experiment was not only an important step toward foil-less H- stripping for charge exchange injection, it also set up a first example of using megawatt ultraviolet (UV) laser source in an operational high power proton accelerator facility. This study reports in detail the design, installation, and commissioning result of a macro-pulsed multi-megawatt UV laser system and laser beam transport line for the laser stripping experiment.

Laser and optical system for laser assisted hydrogen ion beam stripping at SNS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Y.; Rakhman, A.; Menshov, A.

A high-efficiency laser assisted hydrogen ion (H-) beam stripping was recently successfully carried out in the Spallation Neutron Source (SNS) accelerator. The experiment was not only an important step toward foil-less H- stripping for charge exchange injection, it also set up a first example of using megawatt ultraviolet (UV) laser source in an operational high power proton accelerator facility. This study reports in detail the design, installation, and commissioning result of a macro-pulsed multi-megawatt UV laser system and laser beam transport line for the laser stripping experiment.

40Ar ∗ loss in experimentally deformed muscovite and biotite with implications for 40Ar/ 39Ar geochronology of naturally deformed rocks

NASA Astrophysics Data System (ADS)

Cosca, Michael; Stunitz, Holger; Bourgeix, Anne-Lise; Lee, John P.

2011-12-01

The effects of deformation on radiogenic argon ( 40Ar ∗) retentivity in mica are described from high pressure experiments performed on rock samples of peraluminous granite containing euhedral muscovite and biotite. Cylindrical cores, ˜15 mm in length and 6.25 mm in diameter, were drilled from granite collected from the South Armorican Massif in northwestern France, loaded into gold capsules, and weld-sealed in the presence of excess water. The samples were deformed at a pressure of 10 kb and a temperature of 600 °C over a period 29 of hours within a solid medium assembly in a Griggs-type triaxial hydraulic deformation apparatus. Overall shortening in the experiments was approximately 10%. Transmitted light and secondary and backscattered electron imaging of the deformed granite samples reveals evidence of induced defects and for significant physical grain size reduction by kinking, cracking, and grain segmentation of the micas. Infrared (IR) laser (CO 2) heating of individual 1.5-2.5 mm diameter grains of muscovite and biotite separated from the undeformed granite yield well-defined 40Ar/ 39Ar plateau ages of 311 ± 2 Ma (2σ). Identical experiments on single grains separated from the experimentally deformed granite yield results indicating 40Ar ∗ loss of 0-35% in muscovite and 2-3% 40Ar ∗ loss in biotite. Intragrain in situ ultraviolet (UV) laser ablation 40Ar/ 39Ar ages (±4-10%, 1σ) of deformed muscovites range from 309 ± 13 to 264 ± 7 Ma, consistent with 0-16% 40Ar ∗ loss relative to the undeformed muscovite. The in situ UV laser ablation 40Ar/ 39Ar ages of deformed biotite vary from 301 to 217 Ma, consistent with up to 32% 40Ar ∗ loss. No spatial correlation is observed between in situ40Ar/ 39Ar age and position within individual grains. Using available argon diffusion data for muscovite the observed 40Ar ∗ loss in the experimentally treated muscovite can be utilized to predict average 40Ar ∗ diffusion dimensions. Maximum 40Ar/ 39Ar ages obtained by UV laser ablation overlap those of the undeformed muscovite, indicating argon loss of <1% and an average effective grain radius for 40Ar ∗ diffusion ⩾700 μm. The UV laser ablation and IR laser incremental 40Ar/ 39Ar ages indicating 40Ar ∗ loss of 16% and 35%, respectively, are consistent with an average diffusion radius ≪100 μm. These results support a hypothesis of grain-scale 40Ar ∗ diffusion distances in undeformed mica and a heterogeneous mechanical reduction in the intragrain effective diffusion length scale for 40Ar ∗ in deformed mica. Reduction in the effective diffusion length scale in naturally deformed samples occurs most probably through production of mesoscopic and submicroscopic defects such as, e.g., stacking faults. A network of interconnected defects, continuously forming and annealing during dynamic deformation likely plays an important role in controlling both 40Ar ∗ retention and intragrain distribution in deformed mica. Intragrain 40Ar/ 39Ar ages, when combined with estimates of diffusion kinetics and distances, may provide a means of establishing thermochronological histories from individual micas.

Perspectives of using the 223-nm wavelength of the KrCl excimer laser for refractive surgery and for the treatment of some eye diseases

NASA Astrophysics Data System (ADS)

Bagayev, Sergei N.; Chernikh, Valery V.; Razhev, Alexander M.; Zhupikov, Andrey A.

2000-06-01

The new surgical UV ophthalmic laser system Medilex based on the KrCl (223 nm) excimer laser for refractive surgery was created. The comparative analysis of using the UV ophthalmic laser systems Medilex based on the ArF (193 nm) and the KrCl (223 nm) excimer lasers for the correction of refractive errors was performed. The system with the radiation wavelength of 223 nanometer of the KrCl excimer laser for refractive surgery was shown to have several medical and technical advantages over the system with the traditionally used radiation wavelength of 193 nanometer of the ArF excimer laser. In addition the use of the wavelength of 223 nanometer extends functional features of the system, allowing to make not only standard for this type systems surgical and therapeutic procedures but also to treat such ocular diseases as the glaucoma and herpetic keratities. For the UV ophthalmic laser systems Medilex three variations of the beam delivery system including special rotating masks and different beam homogenize systems were developed. All created beam delivery systems are able to make the correction of myopia, hyperopia, astigmatism and myopic or hyperopic astigmatism and may be used for therapeutic procedures. The results of the initial treatments of refractive error corrections using the UV ophthalmic laser systems Medilex for both photorefractive keratectomy (PRK) and LASIK procedures are presented.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films.

PubMed

Nikitin, Timur; Khriachtchev, Leonid

2015-04-22

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si-SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ∼300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas.

Optical and Structural Properties of Si Nanocrystals in SiO2 Films

PubMed Central

Nikitin, Timur; Khriachtchev, Leonid

2015-01-01

Optical and structural properties of Si nanocrystals (Si-nc) in silica films are described. For the SiOx (x < 2) films annealed above 1000 °C, the Raman signal of Si-nc and the absorption coefficient are proportional to the amount of elemental Si detected by X-ray photoelectron spectroscopy. A good agreement is found between the measured refractive index and the value estimated by using the effective-medium approximation. The extinction coefficient of elemental Si is found to be between the values of crystalline and amorphous Si. Thermal annealing increases the degree of Si crystallization; however, the crystallization and the Si–SiO2 phase separation are not complete after annealing at 1200 °C. The 1.5-eV PL quantum yield increases as the amount of elemental Si decreases; thus, this PL is probably not directly from Si-nc responsible for absorption and detected by Raman spectroscopy. Continuous-wave laser light can produce very high temperatures in the free-standing films, which changes their structural and optical properties. For relatively large laser spots, the center of the laser-annealed area is very transparent and consists of amorphous SiO2. Large Si-nc (up to ~300 nm in diameter) are observed in the ring around the central region. These Si-nc lead to high absorption and they are typically under compressive stress, which is connected with their formation from the liquid phase. By using strongly focused laser beams, the structural changes in the free-standing films can be made in submicron areas. PMID:28347028

Solid State Mobile Lidar for Ozone Atmospheric Profiling

NASA Technical Reports Server (NTRS)

De Young, Russell; Carrion, William; Pliutau, Denis; Ganoe, Rene

2014-01-01

A tunable Ce:LiCAF laser is pumped by a CLBO crystal pumped by a doubled Nd:YLF laser running at 1 kilohertz. The UV tunable Ce:LiCAF laser produces two UV pulses between 280 to 295 nanometers. These pulses are transmitted into the atmosphere to profile the concentration of ozone as a function of altitude.

A compact OPO/SFG laser for ultraviolet biological sensing

NASA Astrophysics Data System (ADS)

Tiihonen, Mikael; Pasiskevicius, Valdas; Laurell, Fredrik; Jonsson, Per; Lindgren, Mikael

2004-07-01

A compact parametric oscillator (OPO) with intracavity sum-frequency generation (SFG) to generate 293 nm UV laser irradiation, was developed. The OPO/SFG device was pumped by a 100 Hz Nd:YAG laser (1064 nm) of own design, including subsequent second harmonic generation (SHG) in an external periodically poled KTiOPO4 (KTP) crystal. The whole system could be used to deliver more than 30 μJ laser irradiation per pulse (100 Hz) at 293 nm. The UV laser light was introduced in an optical fiber attached to a sample compartment allowing detection of fluorescence emission using a commercial spectrometer. Aqueous samples containing biomolecules (ovalbumin) or bacteria spores (Bacillus subtilis) were excited by the UV-light at 293 nm resulting in strong fluorescence emission in the range 325 - 600 nm.

Laser annealed in-situ P-doped Ge for on-chip laser source applications (Conference Presentation)

NASA Astrophysics Data System (ADS)

Srinivasan, Ashwyn; Pantouvaki, Marianna; Shimura, Yosuke; Porret, Clement; Van Deun, Rik; Loo, Roger; Van Thourhout, Dries; Van Campenhout, Joris

2016-05-01

Realization of a monolithically integrated on-chip laser source remains the holy-grail of Silicon Photonics. Germanium (Ge) is a promising semiconductor for lasing applications when highly doped with Phosphorous (P) and or alloyed with Sn [1, 2]. P doping makes Ge a pseudo-direct band gap material and the emitted wavelengths are compatible with fiber-optic communication applications. However, in-situ P doping with Ge2H6 precursor allows a maximum active P concentration of 6×1019 cm-3 [3]. Even with such active P levels, n++ Ge is still an indirect band gap material and could result in very high threshold current densities. In this work, we demonstrate P-doped Ge layers with active n-type doping beyond 1020 cm-3, grown using Ge2H6 and PH3 and subsequently laser annealed, targeting power-efficient on-chip laser sources. The use of Ge2H6 precursors during the growth of P-doped Ge increases the active P concentration level to a record fully activated concentration of 1.3×1020 cm-3 when laser annealed with a fluence of 1.2 J/cm2. The material stack consisted of 200 nm thick P-doped Ge grown on an annealed 1 µm Ge buffer on Si. Ge:P epitaxy was performed with PH3 and Ge2H6 at 320oC. Low temperature growth enable Ge:P epitaxy far from thermodynamic equilibrium, resulting in an enhanced incorporation of P atoms [3]. At such high active P concentration, the n++ Ge layer is expected to be a pseudo-direct band gap material. The photoluminescence (PL) intensities for layers with highest active P concentration show an enhancement of 18× when compared to undoped Ge grown on Si as shown in Fig. 1 and Fig. 2. The layers were optically pumped with a 640 nm laser and an incident intensity of 410 mW/cm2. The PL was measured with a NIR spectrometer with a Hamamatsu R5509-72 NIR photomultiplier tube detector whose detectivity drops at 1620 nm. Due to high active P concentration, we expect band gap narrowing phenomena to push the PL peak to wavelengths beyond the detection limit (1620nm) of the setup. Therefore, the 18× enhancement is a lower limit estimation. In this contribution, an extensive study of laser annealing conditions and their impact on material properties will be discussed. A major concern in using highly doped Ge as an active medium is the increase in free-carrier absorption (FCA). However, results reported in [4] suggest that FCA is significantly dominated by holes due to larger absorption cross-section of holes compared to electrons. The FCA results in [4] and JDOS modeling were used to calculate the gain spectrum for the highest doped Ge samples, including the typical 0.25% biaxial tensile strain of epitaxial Ge on Si. A carrier lifetime of 3 ns is required as shown in Fig. 3 for a target threshold current density of sub-20 kA/cm2 which represents at least tenfold reduction when compared to active P-doping level of 6×1019 cm-3. As a result, laser annealed highly doped Ge layers grown with Ge2H6 precursors are a promising approach for realizing a power efficient on-chip Ge laser source.

Identification of novel direct protein-protein interactions by irradiating living cells with femtosecond UV laser pulses.

PubMed

Itri, Francesco; Monti, Daria Maria; Chino, Marco; Vinciguerra, Roberto; Altucci, Carlo; Lombardi, Angela; Piccoli, Renata; Birolo, Leila; Arciello, Angela

2017-10-07

The identification of protein-protein interaction networks in living cells is becoming increasingly fundamental to elucidate main biological processes and to understand disease molecular bases on a system-wide level. We recently described a method (LUCK, Laser UV Cross-linKing) to cross-link interacting protein surfaces in living cells by UV laser irradiation. By using this innovative methodology, that does not require any protein modification or cell engineering, here we demonstrate that, upon UV laser irradiation of HeLa cells, a direct interaction between GAPDH and alpha-enolase was "frozen" by a cross-linking event. We validated the occurrence of this direct interaction by co-immunoprecipitation and Immuno-FRET analyses. This represents a proof of principle of the LUCK capability to reveal direct protein interactions in their physiological environment. Copyright © 2017 Elsevier Inc. All rights reserved.

Rapid laser fabrication of microlens array using colorless liquid photopolymer for AMOLED devices

NASA Astrophysics Data System (ADS)

Kim, Kwang-Ryul; Jeong, Han-Wook; Lee, Kong-Soo; Yi, Junsin; Yoo, Jae-Chern; Cho, Myung-Woo; Cho, Sung-Hak; Choi, Byoungdeog

2011-01-01

Microlens array (MLA) is microfabricated using Ultra Violet (UV) laser for display device applications. A colorless liquid photopolymer, Norland Optical Adhesive (NOA) 60, is spin-coated and pre-cured via UV light for completing the laser process. The laser energy controlled by a galvano scanner is radiated on the surface of the NOA 60. A rapid thermal volume expansion inside the material creates microlens array when the Gaussian laser energy is absorbed. The fabrication process conditions for various shapes and densities of MLA using a non-contact surface profiler are investigated. Furthermore, we analyze the optical and display characteristics for the Organic Light Emitting Diode (OLED) devices. Optimized condition furnishes the OLED with the enhancement of light emission by 15%. We show that UV laser technique, which is installed with NOA 60 MLA layer, is eligible for improving the performance of the next generation display devices.

The Laser-Assisted Field Effect Transistor Gas Sensor Based on Morphological Zinc-Excited Tin-Doped In2O3 Nanowires

NASA Astrophysics Data System (ADS)

Shariati, Mohsen; Khosravinejad, Fariba

The gas nanosensor of indium oxide nanowires in laser assisted approach, doped with tin and zinc for gas sensing and 1D growth purposes respectively, was reported. The nanowires were very sensitive to H2S gas in low concentration of 20ppb gas at room temperature. The fast dynamic intensive and sensitive response to gas was in a few seconds with an on/off sensitivity ratio of around 10. The square cross-section indium oxide nanowires were fabricated through physical vapor deposition (PVD) mechanism and annealing approach. The field emission scanning electron microscopy (FESEM) observations indicated that the annealing temperature was vital in nanostructures’ morphology. The fabricated nanowires for the optimized annealing temperature in applied growth technique were around 60nm in diameter.

Laser-induced Greenish-Blue Photoluminescence of Mesoporous Silicon Nanowires

PubMed Central

Choi, Yan-Ru; Zheng, Minrui; Bai, Fan; Liu, Junjun; Tok, Eng-Soon; Huang, Zhifeng; Sow, Chorng-Haur

2014-01-01

Solid silicon nanowires and their luminescent properties have been widely studied, but lesser is known about the optical properties of mesoporous silicon nanowires (mp-SiNWs). In this work, we present a facile method to generate greenish-blue photoluminescence (GB-PL) by fast scanning a focused green laser beam (wavelength of 532 nm) on a close-packed array of mp-SiNWs to carry out photo-induced chemical modification. The threshold of laser power is 5 mW to excite the GB-PL, whose intensity increases with laser power in the range of 5–105 mW. The quenching of GB-PL comes to occur beyond 105 mW. The in-vacuum annealing effectively excites the GB-PL in the pristine mp-SiNWs and enhances the GB-PL of the laser-modified mp-SiNWs. A complex model of the laser-induced surface modification is proposed to account for the laser-power and post-annealing effect. Moreover, the fast scanning of focused laser beam enables us to locally tailor mp-SiNWs en route to a wide variety of micropatterns with different optical functionality, and we demonstrate the feasibility in the application of creating hidden images. PMID:24820533

Investigation of Annealing Temperature on Copper Oxide Thin Films Using Sol-Gel Spin Coating Technique

NASA Astrophysics Data System (ADS)

Hashim, H.; Samat, S. F. A.; Shariffudin, S. S.; Saad, P. S. M.

2018-03-01

Copper (II) Oxide or cupric oxide (CuO) is one of the well-known materials studied for thin films applications. This paper was studied on the effect of annealing temperature to CuO thin films using sol-gel method and spin coating technique. The solution was prepared by sol-gel method and the thin films were synthesized at various temperatures from 500°C to 700°C that deposited onto the quartz substrates. After the annealing process, the thin films were uniform and brownish black in colour. The measurements were performed by atomic force microscopy (AFM), surface profiler (SP), two-point probe and Ultraviolet-visible (UV-Vis-NIR) spectrometer. From the optical measurement, the band gap was estimated to be 1.44eV for sample annealed at 550°C.

Laser discrimination by stimulated emission of a phosphor

NASA Technical Reports Server (NTRS)

Mathur, V. K.; Chakrabarti, K.

1991-01-01

A method for discriminating sources of UV, near infrared, and far infrared laser radiation was discovered. This technology is based on the use of a single magnesium sulfide phosphor doubly doped with rare earth ions, which is thermally/optically stimulated to generate colors correlatable to the incident laser radiation. The phosphor, after initial charging by visible light, exhibits green stimulated luminescence when exposed to a near infrared source (Nd: YAG laser). On exposure to far infrared sources (CO2 laser) the phosphor emission changes to orange color. A UV laser produces both an orange red as well as green color. A device using this phosphor is useful for detecting the laser and for discriminating between the near infrared, far infrared, and UV lasers. The technology is also capable of infrared laser diode beam profiling since the radiation source leaves an imprint on the phosphor that can be photographed. Continued development of the technology offers potential for discrimination between even smaller bandwidths within the infrared spectrum, a possible aid to communication or wavemixing devices that need to rapidly identify and process optical signals.

Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

NASA Astrophysics Data System (ADS)

Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

2017-10-01

Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

Origin of the enhanced exchange bias in polycrystalline-BiFeO3/Co bilayers by X-ray absorption Spectroscopy

NASA Astrophysics Data System (ADS)

Shen, J. D.; Yang, W. B.; Kumar, A.; Zhao, H. H.; Lai, Y. J.; Feng, L. S.; Xu, Q. Y.; Zhang, Y. Q.; Du, J.; Li, Q.

2018-04-01

Polycrystalline-BiFeO3(BFO)/Co bilayers were grown by pulsed laser deposition (PLD) and magnetron sputtering, with fast laser annealing under magnetic field. The enhanced exchange bias (EB) had been found in the BFO/Co bilayers (Appl. Surf. Sci. 367 (2016) 418). In order to reveal the origin of the enhanced EB in the samples, X-ray absorption Spectroscopy (XAS) of Fe 2p, Co 2p and O 1s were performed. The Co 2p XAS indicated the increase of Co oxidation state and the Fe 2p XAS of sample A and B under laser annealing processes showed that crystal field splitting energy decreased and led to the weakening of spin-orbit coupling with the increasing of the laser fluence. It was considered that the appearance of the oxidation state of Co and Fe2+ ions and the existence of the unidirectional anisotropy due to the laser fluence was responsible for the results and also for the enhanced EB.

Diamagnetic to ferromagnetic switching in VO2 epitaxial thin films by nanosecond excimer laser treatment

NASA Astrophysics Data System (ADS)

Molaei, R.; Bayati, R.; Nori, S.; Kumar, D.; Prater, J. T.; Narayan, J.

2013-12-01

VO2(010)/NiO(111) epitaxial heterostructures were integrated with Si(100) substrates using a cubic yttria-stabilized zirconia (c-YSZ) buffer. The epitaxial alignment across the interfaces was determined to be VO2(010)‖NiO(111)‖c-YSZ(001)‖Si(001) and VO2[100]‖NiO⟨110⟩‖c-YSZ⟨100⟩‖Si⟨100⟩. The samples were subsequently treated by a single shot of a nanosecond KrF excimer laser. Pristine as-deposited film showed diamagnetic behavior, while laser annealed sample exhibited ferromagnetic behavior. The population of majority charge carriers (e-) and electrical conductivity increased by about two orders of magnitude following laser annealing. These observations are attributed to the introduction of oxygen vacancies into the VO2 thin films and the formation of V3+ defects.

Negative-index gratings formed by femtosecond laser overexposure and thermal regeneration

PubMed Central

He, Jun; Wang, Yiping; Liao, Changrui; Wang, Chao; Liu, Shen; Yang, Kaiming; Wang, Ying; Yuan, Xiaocong; Wang, Guo Ping; Zhang, Wenjing

2016-01-01

We demonstrate a method for the preparation of negative-index fibre Bragg gratings (FBGs) using 800 nm femtosecond laser overexposure and thermal regeneration. A positive-index type I-IR FBG was first inscribed in H2-free single-mode fibre using a femtosecond laser directed through a phase mask, and then a highly polarization dependant phase-shifted FBG (P-PSFBG) was fabricated from the type I-IR FBG by overexposure to the femtosecond laser. Subsequently, the P-PSFBG was thermally annealed at 800 °C for 12 hours. Grating regeneration was observed during thermal annealing, and a negative-index FBG was finally obtained with a high reflectivity of 99.22%, an ultra-low insertion loss of 0.08 dB, a blueshift of 0.83 nm in the Bragg wavelength, and an operating temperature of up to 1000 °C for more than 10 hours. Further annealing tests showed that the thermal stability of the negative-index FBG was lower than that of a type II-IR FBG, but much higher than that of a type I-IR FBG. Moreover, the formation of such a negative-index grating may result from thermally regenerated type IIA photosensitivity. PMID:26979090

An Experimental Study on Micro Clinching of Metal Foils with Cutting by Laser Shock Forming

PubMed Central

Wang, Xiao; Li, Cong; Ma, Youjuan; Shen, Zongbao; Sun, Xianqing; Sha, Chaofei; Gao, Shuai; Li, Liyin; Liu, Huixia

2016-01-01

This paper describes a novel technique for joining similar and dissimilar metal foils, namely micro clinching with cutting by laser shock forming. A series of experiments were conducted to study the deformation behavior of single layer material, during which many important process parameters were determined. The process window of the 1060 pure aluminum foils and annealed copper foils produced by micro clinching with cutting was analyzed. Moreover, similar material combination (annealed copper foils) and dissimilar material combination (1060 pure aluminum foils and 304 stainless steel foils) were successfully achieved. The effect of laser energy on the interlock and minimum thickness of upper foils was investigated. In addition, the mechanical strength of different material combinations joined by micro clinching with cutting was measured in single lap shearing tests. According to the achieved results, this novel technique is more suitable for material combinations where the upper foil is thicker than lower foil. With the increase of laser energy, the interlock increased while the minimum thickness of upper foil decreased gradually. The shear strength of 1060 pure aluminum foils and 304 stainless steel foils combination was three times as large as that of 1060 pure aluminum foils and annealed copper foils combination. PMID:28773692

All-Solid-State UV Transmitter Development for Ozone Sensing Applications

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.; Singh, Upendra N.; Armstrong, Darrell Jr.

2009-01-01

In this paper, recent progress made in the development of an all-solid-state UV transmitter suitable for ozone sensing applications from space based platforms is discussed. A nonlinear optics based UV setup based on Rotated Image Singly Resonant Twisted Rectangle (RISTRA) optical parametric oscillator (OPO) module was effectively coupled to a diode pumped, single longitudinal mode, conductively cooled, short-pulsed, high-energy Nd:YAG laser operating at 1064 nm with 50 Hz PRF. An estimated 10 mJ/pulse with 10% conversion efficiency at 320 nm has been demonstrated limited only by the pump pulse spatial profile. The current arrangement has the potential for obtaining greater than 200 mJ/pulse. Previously, using a flash-lamp pumped Nd:YAG laser with round, top-hat profile, up to 24% IR-UV conversion efficiency was achieved with the same UV module. Efforts are underway to increase the IR-UV conversion efficiency of the all solid-state setup by modifying the pump laser spatial profile along with incorporating improved OPO crystals.

Reduction of short wavelength reflectance of multi-wall carbon nanotubes through ultraviolet laser irradiation

NASA Astrophysics Data System (ADS)

Stephens, Michelle S.; Simonds, Brian J.; Yung, Christopher S.; Conklin, Davis; Livigni, David J.; Oliva, Alberto Remesal; Lehman, John H.

2018-05-01

Multi-wall carbon nanotube coatings are used as broadband, low-reflectance absorbers for bolometric applications and for stray light control. They are also used as high emittance blackbody radiators. Irradiation of single wall carbon nanotubes with ultraviolet (UV) laser light has been shown to remove amorphous carbon debris, but there have been few investigations of the interaction of UV light with the more complex physics of multi-wall carbon nanotubes. We present measurements of reflectance and surface morphology before and after exposure of multi-wall carbon nanotube coatings to 248 nm UV laser light. We show that UV exposure reduces the reflectivity at wavelengths below 600 nm and present modeling of the thermal cycling the UV exposure causes at the surface of the carbon nanotubes. This effect can be used to flatten the spectral shape of the reflectivity curve of carbon nanotube absorber coatings used for broadband applications. Finally, we find that the effect of UV exposure depends on the nanotube growth process.

Linear self-focusing of continuous UV laser beam in photo-thermo-refractive glasses.

PubMed

Sidorov, Alexander I; Gorbyak, Veronika V; Nikonorov, Nikolay V

2018-03-19

The experimental and theoretical study of continuous UV laser beam propagation through thick silver-containing photo-thermo-refractive glass is presented. It is shown for the first time that self-action of UV Gaussian beam in glass results in its self-focusing. The observed linear effect is non-reversible and is caused by the transformation of subnanosized charged silver molecular clusters to neutral state under UV laser radiation. Such transformation is accompanied by the increase of molecular clusters polarizability and the refractive index increase in irradiated area. As a result, an extended positive lens is formed in glass bulk. In a theoretical study of linear self-focusing effect, the "aberration-free" approximation was used, taking into account spatial distribution of induced absorption.

Improvement of optical damage in specialty fiber at 266 nm wavelength

NASA Astrophysics Data System (ADS)

Tobisch, T.; Ohlmeyer, H.; Zimmermann, H.; Prein, S.; Kirchhof, J.; Unger, S.; Belz, M.; Klein, K.-F.

2014-02-01

Improved multimode UV-fibers with core diameters ranging from 70 to 600 μm diameter have been manufactured based on novel preform modifications and fiber processing techniques. Only E'-centers at 214 nm and NBOHC at 260 nm are generated in these fibers. A new generation of inexpensive laser-systems have entered the market and generated a multitude of new and attractive applications in the bio-life science, chemical and material processing field. However, for example pulsed 355 nm Nd:YAG lasers generate significant UV-damages in commercially available fibers. For lower wavelengths, no results on suitable multi-mode or low-mode fibers with high UV resistance at 266 nm wavelength (pulsed 4th harmonic Nd:YAG laser) have been published. In this report, double-clad fibers with 70 μm or 100 μm core diameter and a large claddingto- core ratio will be recommended. Laser-induced UV-damages will be compared between these new fiber type and traditional UV fibers with similar core sizes. Finally, experimental results will be cross compared against broadband cw deuterium lamp damage standards.

Damage and annealing recovery of boron-implanted ultra-shallow junction: The correlation between beam current and surface configuration

NASA Astrophysics Data System (ADS)

Chang, Feng-Ming; Wu, Zong-Zhe; Lin, Yen-Fu; Kao, Li-Chi; Wu, Cheng-Ta; JangJian, Shiu-Ko; Chen, Yuan-Nian; Lo, Kuang Yao

2018-03-01

The condition of the beam current in the implantation process is a key issue in the damage rate and structural evolution in the sequent annealing process, especially for ultra-shallow layers. In this work, we develop a compensative optical method combined with UV Raman, X-ray photoelectron spectroscopy (XPS), and X-ray absorption near edge spectroscopy (XANES) to inspect the influence of the beam current in the implantation process. The optima condition of the beam current in the implantation process is determined by higher effective Si-B bond portion in UV Raman spectra and less the peak of B-B bond in XPS spectra which is caused by B cluster defects. Results of XANES indicate that the B oxide layer is formed on the surface of the ultra-shallow junction. The defects in the ultra-shallow junction after annealing are analyzed by novel optical analyses, which cannot be inspected by a traditional thermal wave and resistance measurement. This work exhibits the structural variation of the ultra-shallow junction via a variant beam current and provides a valuable metrology in examining the chemical states and the effective activation in the implantation technology.

Effect of Precursors on the Synthesis of CuO Nanoparticles Under Microwave for Photocatalytic Activity Towards Methylene Blue and Rhodamine B Dyes.

PubMed

Sanjini, N S; Winston, B; Velmathi, S

2017-01-01

Copper oxide nanoparticles have been successfully synthesized by microwave assisted precipitation method. Different precursors like copper chloride, copper nitrate and copper sulphate were used for synthesis of CuO nanoparticles with different shape, size and catalytic activity. Sodium hydroxide acts as a capping agent and ethanol as solvent for the synthesis. The XRD study was conducted to confirm the single phase monoclinic structure of as-synthesized and annealed CuO nano particles. The morphology of the as-synthesized and annealed CuO samples was analyzed by high resolution field emission scanning electron microscope. Fourier transform infrared spectroscopy was done for all the synthesized CuO nanoparticles for functional group characterization. The wide band gap and photocatalytic activity were studied by UV-Visible spectroscopy. The photocatalytic degradation of Methylene blue (MB) and Rhodamine B (RhB) dyes in aqueous solution were investigated under UV light (254 nm). In all the cases annealed samples showed good catalytic activity compared to as-synthesized CuO nanoparticles. The CuO nanoparticles from CuCl2 precursor act as excellent photocatalyst for both MB and RhB compared to CuNO₃ and CuSO₄.

Enhancement of optical transmittance and electrical resistivity of post-annealed ITO thin films RF sputtered on Si

NASA Astrophysics Data System (ADS)

Ali, Ahmad Hadi; Hassan, Zainuriah; Shuhaimi, Ahmad

2018-06-01

This paper reports on the enhancement of optical transmittance and electrical resistivity of indium tin oxide (ITO) transparent conductive oxides (TCO) deposited by radio frequency (RF) sputtering on Si substrate. Post-annealing was conducted on the samples at temperature ranges of 500-700 °C. From X-ray diffraction analysis (XRD), ITO (2 2 2) peak was observed after post-annealing indicating crystallization phase of the films. From UV-vis measurements, the ITO thin film shows highest transmittance of more than 90% at post-annealing temperature of 700 °C as compared to the as-deposited thin films. From atomic force microscope (AFM), the surface roughness becomes smoother after post-annealing as compared to the as-deposited. The lowest electrical resistivity for ITO sample is 6.68 × 10-4 Ω cm after post-annealed at 700 °C that are contributed by high carrier concentration and mobility. The improved structural and surface morphological characteristics helps in increasing the optical transmittance and reducing the electrical resistivity of the ITO thin films.

Scattered UV irradiation during VISX excimer laser keratorefractive surgery.

PubMed

Hope, R J; Weber, E D; Bower, K S; Pasternak, J P; Sliney, D H

2008-04-01

To evaluate the potential occupational health hazards associated with scattered ultraviolet (UV) radiation during photorefractive keratectomy (PRK) using the VISX Star S3 excimer laser. The Laser Vision Center, National Naval Medical Center, Bethesda, Maryland, USA. Intraoperative radiometric measurements were made with the Ophir Power/Energy Meter (LaserStar Model PD-10 with silicon detector) during PRK treatments as well as during required calibration procedures at a distance of 20.3 cm from the left cornea. These measurements were evaluated using a worst-case scenario for exposure, and then compared with the American Conference of Governmental Industrial Hygeinists (ACGIH) Threshold Value Limits (TVL) to perform a risk/hazard analysis. During the PRK procedures, the highest measured value was 248.4 nJ/pulse. During the calibration procedures, the highest measured UV scattered radiation level was 149.6 nJ/pulse. The maximum treatment time was 52 seconds. Using a worst-case scenario in which all treatments used the maximum power and time, the total energy per eye treated was 0.132 mJ/cm2 and the total UV radiation at close range (80 cm from the treated eye) was 0.0085 mJ/cm2. With a workload of 20 patients, the total occupational exposure at 80 cm to actinic UV radiation in an 8-hour period would be 0.425 mJ/cm2. The scattered actinic UV laser radiation from the VISX Star S3 excimer laser did not exceed occupational exposure limits during a busy 8-hour workday, provided that operating room personnel were at least 80 cm from the treated eye. While the use of protective eyewear is always prudent, this study demonstrates that the trace amounts of scattered laser emissions produced by this laser do not pose a serious health risk even without the use of protective eyewear.

Combined Advanced Finishing and UV-Laser Conditioning for Producing UV-Damage-Resistant Fused Silica Optics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Menapace, J A; Penetrante, B; Golini, D

2001-11-01

Laser induced damage initiation on fused silica optics can limit the lifetime of the components when used in high power UV laser environments. Foe example in inertial confinement fusion research applications, the optics can be exposed to temporal laser pulses of about 3-nsec with average fluences of 8 J/cm{sup 2} and peak fluences between 12 and 15 J/cm{sup 2}. During the past year, we have focused on optimizing the damage performance at a wavelength of 355-nm (3{omega}), 3-nsec pulse length, for optics in this category by examining a variety of finishing technologies with a challenge to improve the laser damagemore » initiation density by at least two orders of magnitude. In this paper, we describe recent advances in improving the 3{omega} damage initiation performance of laboratory-scale zirconium oxide and cerium oxide conventionally finished fused silica optics via application of processes incorporating magnetorheological finishing (MRF), wet chemical etching, and UV laser conditioning. Details of the advanced finishing procedures are described and comparisons are made between the procedures based upon large area 3{omega} damage performance, polishing layer contamination, and optical subsurface damage.« less

Device Performance and Reliability Improvements of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing

DTIC Science & Technology

2015-02-15

currently valid OMB control number . PLEASE DO NOT RETURN YOUR FORM TO THE ABOVE ADDRESS. 1. REPORT DATE (DD-MM-YYYY) 20-04-2015 2. REPORT TYPE...of AlGaN/GaN/Si MOSFET Using Defect-Free Gate Recess and Laser Annealing 5a. CONTRACT NUMBER FA2386-11-1-4077 5b. GRANT NUMBER Grant AOARD...114077 5c. PROGRAM ELEMENT NUMBER 61102F 6. AUTHOR(S) Prof. Robert Wallace 5d. PROJECT NUMBER 5e. TASK NUMBER 5f. WORK UNIT NUMBER 7

QCL seeded, ns-pulse, multi-line, CO2 laser oscillator for laser-produced-plasma extreme-UV source

NASA Astrophysics Data System (ADS)

Nowak, Krzysztof Michał; Suganuma, Takashi; Kurosawa, Yoshiaki; Ohta, Takeshi; Kawasuji, Yasufumi; Nakarai, Hiroaki; Saitou, Takashi; Fujimoto, Junichi; Mizoguchi, Hakaru; Sumitani, Akira; Endo, Akira

2017-01-01

Successful merger of state-of-the-art, semiconductor quantum-cascade lasers (QCL), with the mature CO2 laser technology, resulted in a delivery of highly-desired qualities of CO2 laser output that were not available previously without much effort. These qualities, such as multi-line operation, excellent spectro-temporal stability and pulse waveform control, became available from a single device of moderate complexity. This paper describes the operation principle and the unique properties of the solid{state seeded CO2 laser, invented for an application in laser-produced-plasma (LPP), extreme-UV (EUV) light source.

The EGFR family of receptors sensitizes cancer cells towards UV light

NASA Astrophysics Data System (ADS)

Petersen, Steffen; Neves-Petersen, Maria Teresa; Olsen, Birgitte

2008-02-01

A combination of bioinformatics, biophysical, advanced laser studies and cell biology lead to the realization that laser-pulsed UV light stops cancer growth and induces apoptosis. We have previously shown that laser-pulsed UV (LP-UV) illumination of two different skin-derived cancer cell lines both over expressing the EGF receptor, lead to arrest of the EGFR signaling pathway. We have investigated the available sequence and experimental 3D structures available in the Protein Data Bank. The EGF receptor contains a Furin like cystein rich extracellular domain. The cystein content is highly unusual, 25 disulphide bridges supports the 621 amino acid extracellular protein domain scaffold (1mb6.pdb). In two cases a tryptophan is neighboring a cystein in the primary sequence, which in itself is a rare observation. Aromatic residues is observed to be spatially close to all observed 25 disulphide bridges. The EGF receptor is often overexpressed in cancers and other proliferative skin disorders, it might be possible to significantly reduce the proliferative potential of these cells making them good targets for laser-pulsed UV-light treatment. The discovery that UV light can be used to open disulphide bridges in proteins upon illumination of nearby aromatic amino acids was the first step that lead to the hypothesis that UV light could modulate the structure and therefore the function of these key receptor proteins. The observation that membrane receptors (EGFR) contained exactly the motifs that are sensitive to UV light lead to the prediction that UV light could modify these receptors permanently and stop cancer proliferation. We hereby show that the EGFR family of receptors has the necessary structural motifs that make this family of proteins highly sensitive to UV light.

Effect of annealing procedure on the bonding of ceramic to cobalt-chromium alloys fabricated by rapid prototyping.

PubMed

Tulga, Ayca

2018-04-01

An annealing procedure is a heat treatment process to improve the mechanical properties of cobalt-chromium (Co-Cr) alloys. However, information is lacking about the effect of the annealing process on the bonding ability of ceramic to Co-Cr alloys fabricated by rapid prototyping. The purpose of this in vitro study was to evaluate the effects of the fabrication techniques and the annealing procedure on the shear bond strength of ceramic to Co-Cr alloys fabricated by different techniques. Ninety-six cylindrical specimens (10-mm diameter, 10-mm height) made of Co-Cr alloy were prepared by casting (C), milling (M), direct process powder-bed (LaserCUSING) with and without annealing (CL+, CL), and direct metal laser sintering (DMLS) with annealing (EL+) and without annealing (EL). After the application of ceramic to the metal specimens, the metal-ceramic bond strength was assessed using a shear force test at a crosshead speed of 0.5 mm/min. Shear bond strength values were statistically analyzed by 1-way ANOVA and Tukey multiple comparison tests (α=.05). Although statistically significant differences were found among the 3 groups (M, 29.87 ±2.06; EL, 38.92 ±2.04; and CL+, 40.93 ±2.21; P=.002), no significant differences were found among the others (P>.05). The debonding surfaces of all specimens exhibited mixed failure mode. These results showed that the direct process powder-bed method is promising in terms of metal-ceramic bonding ability. The manufacturing technique of Co-Cr alloys and the annealing process influence metal-ceramic bonding. Copyright © 2017 Editorial Council for the Journal of Prosthetic Dentistry. Published by Elsevier Inc. All rights reserved.

Combined infrared and ultraviolet-visible spectroscopy matrix-isolated carbon vapor

NASA Technical Reports Server (NTRS)

Kurtz, Joe; Huffman, Donald R.

1990-01-01

Infrared and UV-visible absorption spectra have been measured on the same sample of matrix-isolated carbon vapor in order to establish correlations between absorption intensities of vibrational and electronic transitions as a function of sample annealing. A high degree of correlation has been found between the IR feature at 1998/cm recently assigned to C8 and a UV absorption feature at about 3100 A. Thus, for the first time, direct evidence is given for the assignment of one of the unknown UV-visible features of the long-studied matrix-isolated carbon vapor spectrum.

Effect of annealing on structure, morphology and optoelectronic properties of nanocrystalline CuO thin films

NASA Astrophysics Data System (ADS)

Jundale, D. M.; Pawar, S. G.; Patil, S. L.; Chougule, M. A.; Godse, P. R.; Patil, V. B.

2011-10-01

The nanocrystalline CuO thin films were prepared on glass substrates by the sol-gel method. The structural, morphological, electrical and optical properties of CuO thin films, submitted to an annealing treatment in the 400-700 °C ranges are studied by X-ray diffraction (XRD), Scanning Electron Microscopy (SEM), Four Probe Technique and UV-visible spectroscopic. XRD measurements show that all the films are crystallized in the monoclinic phase and present a random orientation. Four prominent peaks, corresponding to the (110) phase (2θ≈32.70°), (002) phase (2θ≈35.70°), (111) phase (2θ≈38.76°) and (202) phase (2θ≈49.06°) appear on the diffractograms. The crystallite size increases with increasing annealing temperature. These modifications influence the microstructure, electrical and optical properties. The optical band gap energy decreases with increasing annealing temperature. These mean that the optical quality of CuO films is improved by annealing.

The influence of annealing temperature on the interface and photovoltaic properties of CdS/CdSe quantum dots sensitized ZnO nanorods solar cells.

PubMed

Qiu, Xiaofeng; Chen, Ling; Gong, Haibo; Zhu, Min; Han, Jun; Zi, Min; Yang, Xiaopeng; Ji, Changjian; Cao, Bingqiang

2014-09-15

Arrays of ZnO/CdS/CdSe core/shell nanocables with different annealing temperatures have been investigated for CdS/CdSe quantum dots sensitized solar cells (QDSSCs). CdS/CdSe quantum dots were synthesized on the surface of ZnO nanorods that serve as the scaffold via a simple ion-exchange approach. The uniform microstructure was verified by scanning electron microscope and transmission electron microscope. UV-Visible absorption spectrum and Raman spectroscopy analysis indicated noticeable influence of annealing temperature on the interface structural and optical properties of the CdS/CdSe layers. Particularly, the relationship between annealing temperatures and photovoltaic performance of the corresponding QDSSCs was investigated employing photovoltaic conversion, quantum efficiency and electrochemical impedance spectra. It is demonstrated that higher cell efficiency can be obtained by optimizing the annealing temperature through extending the photoresponse range and improving QD layer crystal quality. Copyright © 2014 Elsevier Inc. All rights reserved.

Low-temperature growth of aligned ZnO nanorods: effect of annealing gases on the structural and optical properties.

PubMed

Umar, Ahmad; Hahn, Yoon-Bong; Al-Hajry, A; Abaker, M

2014-06-01

Aligned ZnO nanorods were grown on ZnO/Si substrate via simple aqueous solution process at low-temperature of - 65 degrees C by using zinc nitrate and hexamethylenetetramine (HMTA). The detailed morphological and structural properties measured by FESEM, XRD, EDS and TEM confirmed that the as-grown nanorods are vertically aligned, well-crystalline possessing wurtzite hexagonal phase and grown along the [0001] direction. The room-temperature photoluminescence spectrum of the grown nanorods exhibited a strong and broad green emission and small ultraviolet emission. The as-prepared ZnO nanorods were post-annealed in nitrogen (N2) and oxygen (O2) environments and further characterized in terms of their morphological, structural and optical properties. After annealing the nanorods exhibit well-crystallinity and wurtzite hexagonal phase. Moreover, by annealing the PL spectra show the enhancement in the UV emission and suppression in the green emission. The presented results demonstrate that simply by post-annealing process, the optical properties of ZnO nanostructures can be controlled.

Annealing effect on structural and optical properties of chemical bath deposited MnS thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ulutas, Cemal, E-mail: cemalulutas@hakkari.edu.tr; Gumus, Cebrail

2016-03-25

MnS thin film was prepared by the chemical bath deposition (CBD) method on commercial microscope glass substrate deposited at 30 °C. The as-deposited film was given thermal annealing treatment in air atmosphere at various temperatures (150, 300 and 450 °C) for 1 h. The MnS thin film was characterized by using X-ray diffraction (XRD), UV-vis spectrophotometer and Hall effect measurement system. The effect of annealing temperature on the structural, electrical and optical properties such as optical constants of refractive index (n) and energy band gap (E{sub g}) of the film was determined. XRD measurements reveal that the film is crystallized inmore » the wurtzite phase and changed to tetragonal Mn{sub 3}O{sub 4} phase after being annealed at 300 °C. The energy band gap of film decreased from 3.69 eV to 3.21 eV based on the annealing temperature.« less

Development of a pulsed UV laser system for laser-desorption mass spectrometry on Mars

NASA Astrophysics Data System (ADS)

Kolleck, C.; Büttner, A.; Ernst, M.; Hülsenbusch, T.; Lang, T.; Marwah, R.; Mebben, S.; Priehs, M.; Kracht, D.; Neumann, J.

2017-11-01

A near-flight prototype of a pulsed UV laser has been developed for the Mars Organic Molecule Analyzer (MOMA) of the ExoMars mission. The laser head is based on a Nd:YAG oscillator with subsequent frequency quadrupling and emits nanosecond pulses with an energy of > 300 μJ at a wavelength of 266 nm. The design is compact and lightweight. Tests in relevant environment regarding temperature, vibration, and radiation have been performed.

UV Raman scattering measurements in a Mach 2 H2-air flame for assessment of CFD models

NASA Technical Reports Server (NTRS)

Cheng, T. S.; Wehrmeyer, J. A.; Pitz, R. W.; Jarrett, O., Jr.; Northam, G. B.

1991-01-01

An UV narrowband tunable excimer laser is used for spontaneous Raman scattering measurements in hydrogen diffusion flames. The UV Raman system is characterized by a repetition rate of about 100 Hz, a temporal resolution of about 20 ns, and a spatial resolution of about 0.4 mm. It is concluded that a single KrF excimer laser based on spontaneous Raman scattering in conjunction with laser-induced predissociative fluorescence is capable of measuring instantaneously and simultaneously major species (H2, O2, N2, H2O), minor species (OH), and temperature.

A new nanosecond UV laser at 355 nm: early results of corneal flap cutting in a rabbit model.

PubMed

Trost, Andrea; Schrödl, Falk; Strohmaier, Clemens; Bogner, Barbara; Runge, Christian; Kaser-Eichberger, Alexandra; Krefft, Karolina; Vogel, Alfred; Linz, Norbert; Freidank, Sebastian; Hilpert, Andrea; Zimmermann, Inge; Grabner, Günther; Reitsamer, Herbert A

2013-12-03

A new 355 nm UV laser was used for corneal flap cutting in an animal model and tested for clinical and morphologic alterations. Corneal flaps were created (Chinchilla Bastards; n = 25) with an UV nanosecond laser at 355 nm (150 kHz, pulse duration 850 ps, spot-size 1 μm, spot spacing 6 × 6 μm, side cut Δz 1 μm; cutting depth 130 μm) and pulse energies of 2.2 or 2.5 μJ, respectively. Following slit-lamp examination, animals were killed at 6, 12, and 24 hours after treatment. Corneas were prepared for histology (hematoxylin and eosin [HE], TUNEL-assay) and evaluated statistically, followed by ultrastructural investigations. Laser treatment was tolerated well, flap lift was easier at 2.5 μJ compared with 2.2 μJ. Standard HE at 24 hours revealed intact epithelium in the horizontal cut, with similar increase in corneal thickness at both energies. Irrespective of energy levels, TUNEL assay revealed comparable numbers of apoptotic cells in the horizontal and vertical cut at 6, 12, and 24 hours, becoming detectable in the horizontal cut as an acellular stromal band at 24 hours. Ultrastructural analysis revealed regular morphology in the epi- and endothelium, while in the stroma, disorganized collagen lamellae were detectable representing the horizontal cut, again irrespective of energy levels applied. This new UV laser revealed no epi- nor endothelial damage at energies feasible for corneal flap cutting. Observed corneal swelling was lower compared with existing UV laser studies, albeit total energy applied here was much higher. Observed loss of stromal keratinocytes is comparable with available laser systems. Therefore, this new laser is suitable for refractive surgery, awaiting its test in a chronic environment.

Laser irradiation in water for the novel, scalable synthesis of black TiOx photocatalyst for environmental remediation

PubMed Central

Zimbone, Massimo; Boutinguiza, Mohamed; Privitera, Vittorio; Grimaldi, Maria Grazia

2017-01-01

Since 1970, TiO2 photocatalysis has been considered a possible alternative for sustainable water treatment. This is due to its material stability, abundance, nontoxicity and high activity. Unfortunately, its wide band gap (≈3.2 eV) in the UV portion of the spectrum makes it inefficient under solar illumination. Recently, so-called “black TiO2” has been proposed as a candidate to overcome this issue. However, typical synthesis routes require high hydrogen pressure and long annealing treatments. In this work, we present an industrially scalable synthesis of TiO2-based material based on laser irradiation. The resulting black TiOx shows a high activity and adsorbs visible radiation, overcoming the main concerns related to the use of TiO2 under solar irradiation. We employed a commercial high repetition rate green laser in order to synthesize a black TiOx layer and we demonstrate the scalability of the present methodology. The photocatalyst is composed of a nanostructured titanate film (TiOx) synthetized on a titanium foil, directly back-contacted to a layer of Pt nanoparticles (PtNps) deposited on the rear side of the same foil. The result is a monolithic photochemical diode with a stacked, layered structure (TiOx/Ti/PtNps). The resulting high photo-efficiency is ascribed to both the scavenging of electrons by Pt nanoparticles and the presence of trap surface states for holes in an amorphous hydrogenated TiOx layer. PMID:28243557

Influence of annealing temperature on physical properties and photocatalytic ability of g-C3N4 nanosheets synthesized through urea polymerization in Ar atmosphere

NASA Astrophysics Data System (ADS)

Mai Oanh, Le Thi; Hang, Lam Thi; Lai, Ngoc Diep; Phuong, Nguyen Thi; Thang, Dao Viet; Hung, Nguyen Manh; Danh Bich, Do; Minh, Nguyen Van

2018-03-01

The influences of annealing temperature on structure, morphology, vibration, optical properties and photocatalytic ability of g-C3N4 nanosheets synthesized from urea in Ar atmosphere were investigated in detail by using x-ray diffraction (XRD) analysis, scanning electron microscopy (SEM), X-ray photoelectron spectroscopy (XPS), Brunauer-Emmett-Teller (BET), Fourier transform infrared spectroscopy (FTIR), UV-vis absorption, and photoluminescence (PL). It was found that the preparation temperature had a great effect on structure and physical properties of g-C3N4. As the processing temperature increased from 450 °C to 650 °C, the interlayer stacking distance of g-C3N4 decreased from 3.281 Å to 3.217 Å and the lattice parameter a decreased from 5.010 Å to 4.934 Å. This indicated a denser packing fashion of g-C3N4 at high annealing temperature. Moreover, the FTIR spectra and SEM images revealed a large fraction of small polymer segments containing only a few heptazine units as annealing temperature increased. BET result indicated an increasing specific surface area as preparation temperature increased. UV-vis absorption spectra showed a decrease of the band gap energy with increasing calcination temperature which agrees well with the measured PL spectra. It was demonstrated that samples annealed at 550 °C exhibited the strongest photocatalytic activity. A decomposition of 80% and 100% of rhodamine B was obtained within respectively 1 h and 2 h under Xenon lamp irradiation. Photocatalytic result could be adequately explained based on evidences of specific surface area, average pore volume and pore size, and recombination rate of photoinduced electron-hole pairs.

The influence of UV laser radiation on the absorption and luminescence of photothermorefractive glasses containing silver ions

NASA Astrophysics Data System (ADS)

Ignat'ev, A. I.; Ignat'ev, D. A.; Nikonorov, N. V.; Sidorov, A. I.

2015-08-01

It is experimentally shown that irradiation of silver-containing glasses by nanosecond laser pulses with a wavelength of 248 nm leads to the formation of unstable point defects (having absorption bands in the UV and visible spectral ranges) in the irradiated region and causes the transition of ions and charged molecular silver clusters to the neutral state, which is accompanied by an increase in the luminescence intensity in the visible spectral range. The influence of pulsed laser irradiation is compared with the effect of exposure to cw UV light of a mercury lamp. Some models are proposed to explain the influence of the laser effect on the optical properties of glasses.

UV Generation of 25 mJ/pulse at 289 nm for Ozone Lidar

NASA Technical Reports Server (NTRS)

Storm, Mark E.; Marsh, Waverly; Barnes, James C.

1998-01-01

Our paper describes a technique for generating tunable UV laser radiation between 250-300 nm capable of energies up to 30-5O mJ/pulse. The tunability of this source is attractive for selecting ozone absorption cross sections which are optimal for ozone DIAL detection throughout the troposphere. A Nd:YAG laser is used to pump a pulsed titanium sapphire laser which is then frequency tripled into the UV. Titanium sapphire (TiS) lases robustly between 750-900 nm. In initial experiments we have converted 110 mJ of 867 nm from a TiS laser into 28 mJ at 289 nm. The energy conversion efficiency was 62% for doubling into 433 nm and 25% into 289 nm.

Coumarin-BODIPY hybrids by heteroatom linkage: versatile, tunable and photostable dye lasers for UV irradiation.

PubMed

Esnal, I; Duran-Sampedro, G; Agarrabeitia, A R; Bañuelos, J; García-Moreno, I; Macías, M A; Peña-Cabrera, E; López-Arbeloa, I; de la Moya, S; Ortiz, M J

2015-03-28

Linking amino and hydroxycoumarins to BODIPYs through the amino or hydroxyl group lets the easy construction of unprecedented photostable coumarin-BODIPY hybrids with broadened and enhanced absorption in the UV spectral region, and outstanding wavelength-tunable laser action within the green-to-red spectral region (∼520-680 nm). These laser dyes allow the generation of a valuable tunable UV (∼260-350 nm) laser source by frequency doubling, which is essential to study accurately the photochemistry of biological molecules under solar irradiation. The tunability is achieved by selecting the substitution pattern of the hybrid. Key factors are the linking heteroatom (nitrogen vs. oxygen), the number of coumarin units joined to the BODIPY framework and the involved linking positions.

EFFECTS OF LASER RADIATION ON MATTER. LASER PLASMA: Effect of laser light on the kinetics of the oxidation of titanium films during heat treatment

NASA Astrophysics Data System (ADS)

Chaplanov, A. M.; Shibko, A. N.

1993-02-01

The application of laser light to materials in a heated state stimulates oxidation-reduction reactions in them. The illumination of titanium films by a beam of photons with hν =1.96 eV during annealing in vacuum stimulates photochemical processes of a nonthermal nature in addition to recrystallization.

Pulsed excimer laser processing for cost-effective solar cells

NASA Technical Reports Server (NTRS)

Wong, David C.

1985-01-01

The application of excimer laser in the fabrication of photovoltaic devices was investigated extensively. Processes included junction formation, laser assisted chemical vapor deposition metallization, and laser assisted chemical vapor deposition surface passivation. Results demonstrated that implementation of junction formation by laser annealing in production is feasible because of excellent control in junction depth and quality. Both metallization and surface passivation, however, were found impractical to be considered for manufacturing at this stage.

Annealing effects on electron-beam evaporated Al 2O 3 films

NASA Astrophysics Data System (ADS)

Shuzhen, Shang; Lei, Chen; Haihong, Hou; Kui, Yi; Zhengxiu, Fan; Jianda, Shao

2005-04-01

The effects of post-deposited annealing on structure and optical properties of electron-beam evaporated Al 2O 3 single layers were investigated. The films were annealed in air for 1.5 h at different temperatures from 250 to 400 °C. The optical constants and cut-off wavelength were deduced. Microstructure of the samples was characterized by X-ray diffraction (XRD). Profile and surface roughness measurement instrument was used to determine the rms surface roughness. It was found that the cut-off wavelength shifted to short wavelength as the annealing temperature increased and the total optical loss decreased. The film structure remained amorphous even after annealing at 400 °C temperature and the samples annealed at higher temperature had the higher rms surface roughness. The decreasing total optical loss with annealing temperature was attributed to the reduction of absorption owing to oxidation of the film by annealing. Guidance to reduce the optical loss of excimer laser mirrors was given.

Diode-pumped UV refractive surgery laser

NASA Astrophysics Data System (ADS)

Lin, Jui T.; Hwang, Ming-Yi; Huang, C. H.

1993-07-01

Ophthalmic applications of medical lasers have been extensively explored recently because of their market potential. Refractive surgical lasers represent one of the major development efforts due to the large population of eye disorders: about 160 million people in the USA and more than 2 billion worldwide. The first refractive laser developed was the ArF excimer laser at 193 nm in 1987 - 88 for a procedure called photorefractive keratectomy (PRK). More recently, solid state refractive lasers have also been explored for preliminary clinical trials. These lasers include Nd:YLF (picosecond at 1054 nm), doubled-Nd:YAG (nanosecond at 532 nm), Ho:YAG (microsecond at 2100 nm) and ultraviolet (UV) lasers generated from the harmonic of Ti:sapphire-laser (205 - 220 nm) and Nd:YAG (at 213 nm).

X-ray photoelectron spectroscopy study of excimer laser treated alumina films

NASA Astrophysics Data System (ADS)

Georgiev, D. G.; Kolev, K.; Laude, L. D.; Mednikarov, B.; Starbov, N.

1998-01-01

Amorphous alumina layers are deposited on a single crystal Si substrate by a e-gun evaporation technique. These films are then thermally annealed in oxygen to be crystallized and, further, irradiated with an excimer laser beam. At each stage of the film preparation, an x-ray photoelectron spectroscopy analysis is performed at the film surface and in depth, upon ion beam grinding. Results give evidence for the formation of an aluminosilicate upon thermal annealing of the film in oxygen. At the surface itself, this compound is observed to decompose upon excimer laser irradiation at energy densities exceeding 1.75 J/cm2, giving rise to free Si atoms and SiO2, however with complete disappearance of Al atoms. Model photochemical reactions are proposed to explain such transformations.

Direct write with microelectronic circuit fabrication

DOEpatents

Drummond, T.; Ginley, D.

1988-05-31

In a process for deposition of material onto a substrate, for example, the deposition of metals for dielectrics onto a semiconductor laser, the material is deposited by providing a colloidal suspension of the material and directly writing the suspension onto the substrate surface by ink jet printing techniques. This procedure minimizes the handling requirements of the substrate during the deposition process and also minimizes the exchange of energy between the material to be deposited and the substrate at the interface. The deposited material is then resolved into a desired pattern, preferably by subjecting the deposit to a laser annealing step. The laser annealing step provides high resolution of the resultant pattern while minimizing the overall thermal load of the substrate and permitting precise control of interface chemistry and interdiffusion between the substrate and the deposit. 3 figs.

Direct write with microelectronic circuit fabrication

DOEpatents

Drummond, Timothy; Ginley, David

1992-01-01

In a process for deposition of material onto a substrate, for example, the deposition of metals or dielectrics onto a semiconductor laser, the material is deposited by providing a colloidal suspension of the material and directly writing the suspension onto the substrate surface by ink jet printing techniques. This procedure minimizes the handling requirements of the substrate during the deposition process and also minimizes the exchange of energy between the material to be deposited and the substrate at the interface. The deposited material is then resolved into a desired pattern, preferably by subjecting the deposit to a laser annealing step. The laser annealing step provides high resolution of the resultant pattern while minimizing the overall thermal load of the substrate and permitting precise control of interface chemistry and interdiffusion between the substrate and the deposit.

Deep Ultraviolet Light Emitters Based on (Al,Ga)N/GaN Semiconductor Heterostructures

NASA Astrophysics Data System (ADS)

Liang, Yu-Han

Deep ultraviolet (UV) light sources are useful in a number of applications that include sterilization, medical diagnostics, as well as chemical and biological identification. However, state-of-the-art deep UV light-emitting diodes and lasers made from semiconductors still suffer from low external quantum efficiency and low output powers. These limitations make them costly and ineffective in a wide range of applications. Deep UV sources such as lasers that currently exist are prohibitively bulky, complicated, and expensive. This is typically because they are constituted of an assemblage of two to three other lasers in tandem to facilitate sequential harmonic generation that ultimately results in the desired deep UV wavelength. For semiconductor-based deep UV sources, the most challenging difficulty has been finding ways to optimally dope the (Al,Ga)N/GaN heterostructures essential for UV-C light sources. It has proven to be very difficult to achieve high free carrier concentrations and low resistivities in high-aluminum-containing III-nitrides. As a result, p-type doped aluminum-free III-nitrides are employed as the p-type contact layers in UV light-emitting diode structures. However, because of impedance-mismatch issues, light extraction from the device and consequently the overall external quantum efficiency is drastically reduced. This problem is compounded with high losses and low gain when one tries to make UV nitride lasers. In this thesis, we provide a robust and reproducible approach to resolving most of these challenges. By using a liquid-metal-enabled growth mode in a plasma-assisted molecular beam epitaxy process, we show that highly-doped aluminum containing III-nitride films can be achieved. This growth mode is driven by kinetics. Using this approach, we have been able to achieve extremely high p-type and n-type doping in (Al,Ga)N films with high aluminum content. By incorporating a very high density of Mg atoms in (Al,Ga)N films, we have been able to show, by temperature-dependent photoluminescence, that the activation energy of the acceptors is substantially lower, thus allowing a higher hole concentration than usual to be available for conduction. It is believed that the lower activation energy is a result of an impurity band tail induced by the high Mg concentration. The successful p-type doping of high aluminum-content (Al,Ga)N has allowed us to demonstrate operation of deep ultraviolet LEDs emitting at 274 nm. This achievement paves the way for making lasers that emit in the UV-C region of the spectrum. In this thesis, we performed preliminary work on using our structures to make UV-C lasers based on photonic crystal nanocavity structures. The nanocavity laser structures show that the threshold optical pumping power necessary to reach lasing is much lower than in conventional edge-emitting lasers. Furthermore, the photonic crystal nanocavity structure has a small mode volume and does not need mirrors for optical feedback. These advantages significantly reduce material loss and eliminate mirror loss. This structure therefore potentially opens the door to achieving efficient and compact lasers in the UV-C region of the spectrum.

Comparison of femtosecond laser and continuous wave UV sources for protein-nucleic acid crosslinking.

PubMed

Fecko, Christopher J; Munson, Katherine M; Saunders, Abbie; Sun, Guangxing; Begley, Tadhg P; Lis, John T; Webb, Watt W

2007-01-01

Crosslinking proteins to the nucleic acids they bind affords stable access to otherwise transient regulatory interactions. Photochemical crosslinking provides an attractive alternative to formaldehyde-based protocols, but irradiation with conventional UV sources typically yields inadequate product amounts. Crosslinking with pulsed UV lasers has been heralded as a revolutionary technique to increase photochemical yield, but this method had only been tested on a few protein-nucleic acid complexes. To test the generality of the yield enhancement, we have investigated the benefits of using approximately 150 fs UV pulses to crosslink TATA-binding protein, glucocorticoid receptor and heat shock factor to oligonucleotides in vitro. For these proteins, we find that the quantum yields (and saturating yields) for forming crosslinks using the high-peak intensity femtosecond laser do not improve on those obtained with low-intensity continuous wave (CW) UV sources. The photodamage to the oligonucleotides and proteins also has comparable quantum yields. Measurements of the photochemical reaction yields of several small molecules selected to model the crosslinking reactions also exhibit nearly linear dependences on UV intensity instead of the previously predicted quadratic dependence. Unfortunately, these results disprove earlier assertions that femtosecond pulsed laser sources provide significant advantages over CW radiation for protein-nucleic acid crosslinking.

Effect of solvent and subsequent thermal annealing on the performance of phenylenevinylene copolymer: PCBM solar cells.

PubMed

Sharma, G D; Suresh, P; Sharma, S S; Vijay, Y K; Mikroyannidis, John A

2010-02-01

The morphology of the photoactive layer used in the bulk heterojunction photovoltaic devices is crucial for efficient charge generation and their collection at the electrodes. We investigated the solvent vapor annealing and thermal annealing effect of an alternating phenylenevinylene copolymer P:PCBM blend on its morphology and optical properties. The UV-visible absorption spectroscopy shows that both solvent and thermal annealing can result in self-assembling of copolymer P to form an ordered structure, leading to enhanced absorption in the red region and hole transport enhancement. By combining the solvent and thermal annealing of the devices, the power conversion efficiency is improved. This feature was attributed to the fact that the PCBM molecules begin to diffuse into aggregates and together with the ordered copolymer P phase form bicontinuous pathways in the entire layer for efficient charge separation and transport. Furthermore, the measured photocurrent also suggests that the space charges no longer limit the values of the short circuit current (J(sc)) and fill factor (FF) for solvent-treated and thermally annealed devices. These results indicate that the higher J(sc) and PCE for the solvent-treated and thermally annealed devices can be attributed to the phase separation of active layers, which leads to a balanced carrier mobility. The overall PCE of the device based on the combination of solvent annealing and thermal annealing is about 3.7 %.

Chemical nature of colossal dielectric constant of CaCu3Ti4O12 thin film by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Deng, Guochu; Xanthopoulos, Nicolas; Muralt, Paul

2008-04-01

Epitaxial CaCu3Ti4O12 thin films grown by pulsed laser deposition were studied in the as-deposited and oxygen annealed state. The first one exhibited the usual transition from dielectric to colossal dielectric behavior upon increasing the temperature to above 100K. This transition disappeared after annealing at 900°C in air. The two states significantly differ in their x-ray photoelectron spectra. The state of colossal dielectric constant corresponds to a bulk material with considerable amounts of Cu + and Ti3+, combined with Cu species enrichment at the surface. The annealed state exhibited a nearly stoichiometric composition with no Cu+ and Ti3+. The previously observed p-type conduction in the as-deposited state is thus related to oxygen vacancies compensated by the point defects of Cu+ and Ti3+.

Superconducting magnesium diboride films with Tc≈24 K grown by pulsed laser deposition with in situ anneal

NASA Astrophysics Data System (ADS)

Christen, H. M.; Zhai, H. Y.; Cantoni, C.; Paranthaman, M.; Sales, B. C.; Rouleau, C.; Norton, D. P.; Christen, D. K.; Lowndes, D. H.

2001-05-01

Thin superconducting films of magnesium diboride (MgB 2) with T c≈24 K were prepared on various oxide substrates by pulsed laser deposition followed by an in situ anneal. A systematic study of the influence of various in situ annealing parameters shows an optimum temperature of about 600°C in a background of 0.7 atm of Ar/4%H 2 for layers consisting of a mixture of magnesium and boron. Contrary to ex situ approaches (e.g. reacting boron films with magnesium vapor at ≈900°C), these films are processed at a temperature at which MgB 2 does not decompose rapidly even in vacuum. This may prove enabling in the formation of multilayers, junctions, and epitaxial films in future work. Issues related to the improvement of these films and to the possible in situ growth of MgB 2 at elevated temperature are discussed.

Thermal evolution of defects in undoped zinc oxide grown by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Wang, Zilan; Su, Shichen; Ling, Francis Chi-Chung; Anwand, W.; Wagner, A.

2014-07-01

Undoped ZnO films are grown by pulsed laser deposition on c-plane sapphire with different oxygen pressures. Thermal evolutions of defects in the ZnO films are studied by secondary ion mass spectroscopy (SIMS), Raman spectroscopy, and positron annihilation spectroscopy (PAS), and with the electrical properties characterized by the room temperature Hall measurement. Oxygen deficient defect related Raman lines 560 cm-1 and 584 cm-1 are identified and their origins are discussed. Thermal annealing induces extensive Zn out-diffusion at the ZnO/sapphire interface and leaves out Zn-vacancy in the ZnO film. Two types of Zn-vacancy related defects with different microstructures are identified in the films. One of them dominates in the samples grown without oxygen. Annealing the sample grown without oxygen or growing the samples in oxygen would favor the Zn-vacancy with another microstructure, and this Zn-vacancy defect persists after 1100 °C annealing.

Self-organized TiO2 nanotube arrays in the photocatalytic degradation of methylene blue under UV light irradiation

NASA Astrophysics Data System (ADS)

Chung, Eun Hyuk; Baek, Seong Rim; Yu, Seong Mi; Kim, Jong Pil; Hong, Tae Eun; Kim, Hyun Gyu; Bae, Jong-Seong; Jeong, Euh Duck; Khan, F. Nawaz; Jung, Ok-sang

2015-04-01

Nanostructured titanium dioxide (NTiO2) is known to possess efficient photocatalytic activity and to have diverse applications in many fields due to its chemical stability, high surface area/volume ratio, high transmittance, and high refractive index in the visible and the near-ultraviolet regions. These facts prompted us to develop TiO2 nanotube (TiO2 NT) arrays through electrochemical anodic oxidation involving different electrolytes comprised of phosphoric acid — hydrofluoric acid aqueous systems by varying the voltage and the time. The annealing temperature of the nanotubes, TiO2 NTs, were varied to modify the surface morphology and were characterized by using X-ray diffraction and scanning electron microscopy. Scanning electron microscopy and X-ray diffraction results showed that the samples had uniform morphologies and good crystalline structures of the anatase phase at lower annealing temperatures and of the rutile phase at higher annealing temperatures. A secondary-ion mass-spectrometry analysis was used to investigate the surface atoms and to conduct a depth profile analysis of the TiO2 NTs. The efficiency of the photocatalytic activity of the TiO2 NT arrays in degrading methylene blue (MB) was investigated under UV-Vis light irradiation. The maximum photocatalytic activity was achieved for the samples with lower annealing temperatures due to their being in the anatase phase and having a higher surface area and a smaller crystal size, which play important roles in the degradation of organic pollutants.

Remote Sensing of Turbine Engine Gases.

DTIC Science & Technology

1981-09-30

Institute by lasers operating in the infrared compared to the visible and of Technology. Lexington, M A 0217 3. UV region. 00l8.9197/81/0900-1917S00.75 0...mini-TEA lasers used in both single- and dual- laser consists of a UV -preionized discharge between Rogowski laser DIAL systems, and a study has been...described previously [10]. The discharge is thyratron system. This research has led to a better understanding of triggered and may operate at a pulse

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Effect of Annealing Conditions on Properties of Sol-Gel Derived Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Gao, Mei-Zhen; Zhang, Feng; Liu, Jing; Sun, Hui-Na

2009-08-01

Transparent conductive Al-doped ZnO (AZO) thin films are prepared on normal glass substrates by the sol-gel spin coating method. The effects of drying conditions, annealing temperature and cooling rate on the structural, electrical and optical properties of AZO films are investigated by x-ray diffraction, scanning electron microscopy, the four-point probe method and UV-VIS spectrophotometry, respectively. The deposited films show a hexagonal wurtzite structure and high preferential c-axis orientation. As the drying temperature increases from 100°C to 300°C the resistivity of AZO films decreases dramatically. In contrast to the annealed films cooled in a furnace and in air, the resistivity of the annealed film which is cooled at -15°C is greatly reduced. Increasing the cooling rate dramatically increases the electrical conductivity of AZO films.

Effect of Pre-Annealing on Thermal and Optical Properties of ZnO and Al-ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saravanan, P.; Gnanavelbabu, A.; Pandiaraj, P.

Zinc oxide (ZnO) nanoparticles were synthesized by a simple solution route method using zinc acetate as the precursor and ethanol as the solvent. At a temperature of 60∘C, a clear homogenous solution is heated to 100∘C for ethanol evaporation. Then the obtained precursor powder is annealed at 600∘C for the formation of ZnO nanocrystalline structure. Doped ZnO particle is also prepared by using aluminum nitrate nonahydrate to produce aluminum (Al)-doped nanoparticles using the same solution route method followed by annealing. Thin film fabrication is done by air evaporation method using the polymer polyvinyl alcohol (PVA). To analyze the optical and thermal properties for undoped and doped ZnO nanocrystalline thin film by precursor annealing, characterizations such as UV, FTIR, AFM, TGA/DTA, XRD, EDAX and Photoluminescence (PL) were also taken. It was evident that precursor annealing had great influence on thermal and optical properties of thin films while ZnO and AZO film showed low crystallinity and intensity than in the powder form. TGA/DTA suggests pre-annealing effect improves the thermal stability, which ensures that Al ZnO nanoparticle can withstand at high temperature too which is the crucial advantage in the semiconductor devices. UV spectroscopy confirmed the presence of ZnO nanoparticles in the thin film by an absorbance peak observed at 359nm with an energy bandgap of 3.4eV. A peak obtained at 301nm with an energy bandgap of 4.12eV shows a blue shift due to the presence of Al-doped ZnO nanoparticles. Both ZnO and AZO bandgap increased due to precursor annealing. In this research, PL spectrum is also studied in order to determine the optical property of the nanoparticle embedded thin film. From PL spectrum, it is observed that the intensity of the doped ZnO is much more enhanced as the dopant concentration is increased to 1wt.% and 2wt.% of Al in ZnO.

All-femtosecond laser-assisted in situ keratomileusis

NASA Astrophysics Data System (ADS)

Gabryte, Egle; Danieliene, Egle; Vaiceliunaite, Agne; Ruksenas, Osvaldas; Vengris, Mikas; Danielius, Romualdas

2013-03-01

We present a femtosecond solid-state Yb:KGW laser system capable of performing the complete laser-assisted in situ keratomileusis (LASIK) ophthalmic procedure. The fundamental infrared radiation (IR) is used to create the corneal flap, and subsequently the corneal stromal ablation is performed using the ultraviolet (UV) pulses of the fifth harmonic. The heating of cornea, ablated surface quality, and healing outcomes of the surgeries performed using the femtosecond laser system are investigated by both ex vivo and in vivo experiments and compared to the results of conventional clinical ArF excimer laser application. The results of this research indicate the feasibility of clinical application of femtosecond UV lasers for LASIK procedure.

Integrated oxide graphene based device for laser inactivation of pathogenic microorganisms

NASA Astrophysics Data System (ADS)

Grishkanich, Alexsandr; Ruzankina, Julia; Afanasyev, Mikhail; Paklinov, Nikita; Hafizov, Nail

2018-02-01

We develop device for virus disinfection of pathogenic microorganisms. Viral decontamination can be carried out due to hard ultraviolet irradiation and singlet oxygen destroying the genetic material of a virus capsid. UV rays can destroy DNA, leading to the formation of dimers of nucleic acids. This practically does not occur in tissues, tk. UV rays penetrate badly through them, however, the viral particles are small and UV can destroy their genetic material, RNA / DNA and the virus can not replicate. It is with the construction of the ultraviolet laser water disinfection system (UFLOV) based on the continuous and periodic pulsed ultraviolet laser sources (pump) binds to solve sterility and depyrogenation of water. It has been established that small doses of UV irradiation stimulate reproduction, and large doses cause the death of pathogenic microorganisms. The effect of a dose of ultraviolet is the result of photochemical action on the substance of a living bacterial cell or virion. Also complex photodynamic laser inactivation on graphene oxide is realized.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

NASA Astrophysics Data System (ADS)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-06-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Maskless Lithography Using Negative Photoresist Material: Impact of UV Laser Intensity on the Cured Line Width

NASA Astrophysics Data System (ADS)

Mohammed, Mohammed Ziauddin; Mourad, Abdel-Hamid I.; Khashan, Saud A.

2018-04-01

The application of maskless lithography technique on negative photoresist material is investigated in this study. The equipment used in this work is designed and built especially for maskless lithography applications. The UV laser of 405 nm wavelength with 0.85 Numerical Aperture is selected for direct laser writing. All the samples are prepared on a glass substrate. Samples are tested at different UV laser intensities and different stage velocities in order to study the impact on patterned line width. Three cases of spin coated layers of thickness 90 μm, 40 μm, and 28 μm on the substrate are studied. The experimental results show that line width has a generally increasing trend with intensity. However, a decreasing trend was observed for increasing velocity. The overall performance shows that the mr-DWL material is suitable for direct laser writing systems.

Physicochemical modifications accompanying UV laser induced surface structures on poly(ethylene terephthalate) and their effect on adhesion of mesenchymal cells.

PubMed

Rebollar, Esther; Pérez, Susana; Hernández, Margarita; Domingo, Concepción; Martín, Margarita; Ezquerra, Tiberio A; García-Ruiz, Josefa P; Castillejo, Marta

2014-09-07

This work reports on the formation of different types of structures on the surface of polymer films upon UV laser irradiation. Poly(ethylene terephthalate) was irradiated with nanosecond UV pulses at 193 and 266 nm. The polarization of the laser beam and the irradiation angle of incidence were varied, giving rise to laser induced surface structures with different shapes and periodicities. The irradiated surfaces were topographically characterized by atomic force microscopy and the chemical modifications induced by laser irradiation were inspected via micro-Raman and fluorescence spectroscopies. Contact angle measurements were performed with different liquids, and the results evaluated in terms of surface free energy components. Finally, in order to test the influence of surface properties for a potential application, the modified surfaces were used for mesenchymal stem cell culture assays and the effect of nanostructure and surface chemistry on cell adhesion was evaluated.

Comparison of the effect of UV laser radiation and of a radiomimetic substance on chromatin

NASA Astrophysics Data System (ADS)

Radulescu, Irina; Radu, Liliana; Serbanescu, Ruxandra; Nelea, V. D.; Martin, C.; Mihailescu, Ion N.

1998-07-01

The damages of the complex of deoxyribonucleic acid (DNA) and proteins from chromatin, produced by the UV laser radiation and/or by treatment with a radiomimetic substance, bleomycin, were compared. The laser radiation and bleomycin effects on chromatin structure were determined by the static and dynamic fluorimetry of chromatin complexes with the DNA specific ligand-- proflavine and by the analysis of tryptophan chromatin intrinsic fluorescence. Time resolved spectroscopy is a sensitive technique which allows to determine the excited state lifetimes of chromatin--proflavine complexes. Also, the percentage contributions to the fluorescence of proflavine, bound and unbound to chromatin DNA, were evaluated. The damages produced by the UV laser radiation on chromatin are similar with those of radiomimetic substance action and consists in DNA and proteins destruction. The DNA damage degree has been determined. The obtained results may constitute some indications in the laser utilization in radiochimiotherapy.

Corneal reshaping using a pulsed UV solid-state laser

NASA Astrophysics Data System (ADS)

Ren, Qiushi; Simon, Gabriel; Parel, Jean-Marie A.; Shen, Jin-Hui; Takesue, Yoshiko

1993-06-01

Replacing the gas ArF (193 nm) excimer laser with a solid state laser source in the far-UV spectrum region would eliminate the hazards of a gas laser and would reduce its size which is desirable for photo-refractive keratectomy (PRK). In this study, we investigated corneal reshaping using a frequency-quintupled (213 nm) pulsed (10 ns) Nd:YAG laser coupled to a computer-controlled optical scanning delivery system. Corneal topographic measurements showed myopic corrections ranging from 2.3 to 6.1 diopters. Post-operative examination with the slit-lamp and operating microscope demonstrated a smoothly ablated surface without corneal haze. Histological results showed a smoothly sloping surface without recognizable steps. The surface quality and cellular effects were similar to that of previously described excimer PRK. Our study demonstrated that a UV solid state laser coupled to an optical scanning delivery system is capable of reshaping the corneal surface with the advantage of producing customized, aspheric corrections without corneal haze which may improve the quality of vision following PRK.

Interaction of UV laser pulses with reactive dusty plasmas

NASA Astrophysics Data System (ADS)

van de Wetering, Ferdi; Beckers, Job; Nijdam, Sander; Oosterbeek, Wouter; Kovacevic, Eva; Berndt, Johannes

2016-09-01

This contribution deals with the effects of UV photons on the synthesis and transport of nanoparticles in reactive complex plasmas (capacitively coupled RF discharge). First measurements showed that the irradiation of a reactive acetylene-argon plasma with high-energy, ns UV laser pulses (355 nm, 75 mJ pulse energy, repetition frequency 10Hz) can have a large effect on the global discharge characteristics. One particular example concerns the formation of a dust void in the center of the discharge. At sufficiently high pulse energies, this formation of a dust free region - which occurs without laser irradiation-is totally suppressed. Moreover the experiments indicate that the laser pulses influence the early stages of the particle formation. Although the interaction between the laser and the plasma is not yet fully understood, it is remarkable that these localized nanosecond laser pulses can influence the plasma on a global scale. Besides new insights into fundamental problems, this phenomenon opens also new possibilities for the controlled manipulation of particle growth and particle transport in reactive plasmas.

Controlling the Photocorrosion of Zinc Sulfide Nanoparticles in Water by Doping with Chloride and Cobalt Ions.

PubMed

Weide, Philipp; Schulz, Katharina; Kaluza, Stefan; Rohe, Markus; Beranek, Radim; Muhler, Martin

2016-12-06

Photodegradation under UV light irradiation is a major drawback in photocatalytic applications of sulfide semiconductors. ZnS nanoparticles were doped with very low amounts of chloride or cobalt ions in the ppm range and codoped with chloride and cobalt ions during their synthesis by precipitation in aqueous solution followed by calcination. The high-temperature wurtzite phase annealed at 800 °C had a high susceptibility to UV irradiation in water, while the low-temperature zincblende phase annealed at 400 °C was found to be stable. Chlorine doping increased the rate of photocorrosion in water, whereas cobalt doping led to a stabilization of the ZnS nanoparticles. Based on photochemical and spectroscopic investigations applying UV/vis, X-ray photoelectron, and photoluminescence spectroscopy, the increased susceptibility of Cl-doped ZnS is ascribed to a higher number of surface point defects, whereas the stabilization by Co 2+ is caused by additional recombination pathways for the charge carriers in the bulk, thus avoiding photocorrosion processes at the surface. Additional doping of Cl-doped ZnS with cobalt ions was found to counteract the detrimental effect of the chloride ions efficiently.

Visible laser and UV-A radiation impact on a PNP degrading Moraxella strain and its rpoS mutant.

PubMed

Nandakumar, Kanavillil; Keeler, Werden; Schraft, Heidi; Leung, Kam T

2006-07-05

The role of stationary phase sigma factor gene (rpoS) in the stress response of Moraxella strain when exposed to radiation was determined by comparing the stress responses of the wild-type (WT) and its rpoS knockout (KO) mutant. The rpoS was turned on by starving the WT cultures for 24 h in minimal salt medium. Under non-starved condition, both WT and KO planktonic Moraxella cells showed an increase in mortality with the increase in duration of irradiation. In the planktonic non-starved Moraxella, for the power intensity tested, UV radiation caused a substantially higher mortality rate than did by the visible laser light (the mortality rate observed for 15-min laser radiation was 53.4 +/- 10.5 and 48.7 +/- 8.9 for WT and KO, respectively, and 97.6 +/- 0 and 98.5 +/- 0 for 25 s of UV irradiation in WT and KO, respectively). However, the mortality rate decreased significantly in the starved WT when exposed to these two radiations. In comparison, rpoS protected the WT against the visible laser light more effectively than it did for the UV radiation. The WT and KO strains of Moraxella formed distinctly different types of biofilms on stainless steel coupons. The KO strain formed a denser biofilm than did the WT. Visible laser light removed biofilms from the surfaces more effectively than did the UV. This was true when comparing the mortality of bacteria in the biofilms as well. The inability of UV radiation to penetrate biofilms due to greater rates of surface absorption is considered to be the major reason for the weaker removal of biofilms in comparison to that of the visible laser light. This result suggests that high power visible laser light might be an effective tool for the removal of biofilms. (c) 2006 Wiley Periodicals, Inc.

Synthesis, characterization, and photocatalytic properties of nanocrystalline NZO thin films

NASA Astrophysics Data System (ADS)

Aryanto, D.; Hastuti, E.; Husniya, N.; Sudiro, T.; Nuryadin, B. W.

2018-03-01

Nanocrystalline Ni-doped ZnO (NZO) thin films were synthesized on glass substrate using sol-gel spin coating methods. The effect of annealing on the structural and optical properties of nanocrystalline thin film was studied using X-ray diffractometer (XRD), field emission scanning electron microscopy (FESEM), UV-VIS spectrophotometry, and photoluminescence (PL). The results showed that the annealing temperature strongly influenced the physical properties of nanocrystalline NZO thin films. The photocatalytic properties of nanocrystalline NZO thin films were evaluated using an aqueous solution of Rhodamine-B. The photocatalytic activity of nanocrystalline NZO thin films increased with the increase of annealing temperature. The results indicated that the structure, morphology, and band gap energy of nanocrystalline NZO thin films played an important role in photocatalytic activity.

GaN thin films growth and their application in photocatalytic removal of sulforhodamine B from aqueous solution under UV pulsed laser irradiation.

PubMed

Gondal, Mohammed A; Chang, Xiao F; Yamani, Zain H; Yang, Guo F; Ji, Guang B

2011-01-01

Single-crystalline Gallium Nitride (GaN) thin films were fabricated and grown by metal organic chemical vapor deposition (MOCVD) method on c-plane sapphire substrates and then characterized by high resolution-X-ray diffraction (HR-XRD) and photoluminescence (PL) measurements. The photocatalytic decomposition of Sulforhodamine B (SRB) molecules on GaN thin films was investigated under 355 nm pulsed UV laser irradiation. The results demonstrate that as-grown GaN thin films exhibited efficient degradation of SRB molecules and exhibited an excellent photocatalytic-activity-stability under UV pulsed laser exposure.

Spatially selective Au nanoparticle growth in laser-quality glass controlled by UV-induced phosphate-chain cross-linkage

NASA Astrophysics Data System (ADS)

Sigaev, Vladimir N.; Savinkov, Vitaly I.; Lotarev, Sergey V.; Shakhgildyan, Georgiy Yu; Lorenzi, Roberto; Paleari, Alberto

2013-06-01

Herein we describe how UV excitation of localized electronic states in phosphate glasses can activate structural rearrangements that influence the kinetics of Au nanoparticle (NP) thermal growth in Au-doped glass. The results suggest a novel strategy to address the problem of controlling nano-assembly processes of metal NP patterns in fully inorganic and chemically stable hard materials, such as laser-quality glasses. We show that the mechanism is promoted by opening and subsequent cross-linkage of phosphate chains under UV excitation of non-bridging groups in the amorphous network of the glass, with a consequent modification of Au diffusion and metal NP growth. Importantly, the micro-Raman mapping of the UV-induced modifications demonstrates that the process is restricted within the beam waist region of the focused UV laser beam. This fact is consistent with the need for more than one excitation event, close in time and in space, in order to promote structural cross-linkage and Au diffusion confinement. The stability of the photo-induced modifications makes it possible to design new metal patterning approaches for the fabrication of three-dimensional metal structures in laser-quality materials for high-power nonlinear applications.

Spatially selective Au nanoparticle growth in laser-quality glass controlled by UV-induced phosphate-chain cross-linkage.

PubMed

Sigaev, Vladimir N; Savinkov, Vitaly I; Lotarev, Sergey V; Shakhgildyan, Georgiy Yu; Lorenzi, Roberto; Paleari, Alberto

2013-06-07

Herein we describe how UV excitation of localized electronic states in phosphate glasses can activate structural rearrangements that influence the kinetics of Au nanoparticle (NP) thermal growth in Au-doped glass. The results suggest a novel strategy to address the problem of controlling nano-assembly processes of metal NP patterns in fully inorganic and chemically stable hard materials, such as laser-quality glasses. We show that the mechanism is promoted by opening and subsequent cross-linkage of phosphate chains under UV excitation of non-bridging groups in the amorphous network of the glass, with a consequent modification of Au diffusion and metal NP growth. Importantly, the micro-Raman mapping of the UV-induced modifications demonstrates that the process is restricted within the beam waist region of the focused UV laser beam. This fact is consistent with the need for more than one excitation event, close in time and in space, in order to promote structural cross-linkage and Au diffusion confinement. The stability of the photo-induced modifications makes it possible to design new metal patterning approaches for the fabrication of three-dimensional metal structures in laser-quality materials for high-power nonlinear applications.

Controlled UV-C light-induced fusion of thiol-passivated gold nanoparticles.

PubMed

Pocoví-Martínez, Salvador; Parreño-Romero, Miriam; Agouram, Said; Pérez-Prieto, Julia

2011-05-03

Thiol-passivated gold nanoparticles (AuNPs) of a relatively small size, either decorated with chromophoric groups, such as a phthalimide (Au@PH) and benzophenone (Au@BP), or capped with octadecanethiol (Au@ODCN) have been synthesized and characterized by NMR and UV-vis spectroscopy as well as transmission electron microscopy (TEM). These NPs were irradiated in chloroform at different UV-wavelengths using either a nanosecond laser (266 and 355 nm, ca. 12 mJ/pulse, 10 ns pulse) or conventional lamps (300 nm < λ < 400 nm and ca. 240 nm < λ < 280 nm) and the new AuNPs were characterized by X-ray and UV-vis spectroscopy, as well as by TEM. Laser irradiation at 355 nm led to NP aggregation and precipitation, while the NPs were photostable under UV-A lamp illumination. Remarkably, laser excitation at 266 nm induced a fast (minutes time-scale) increase in the size of the NPs, producing huge spherical nanocrystals, while lamp-irradiation at UV-C wavelengths brought about nanonetworks of partially fused NPs with a larger diameter than the native NPs.

Pulsed UV laser-induced modifications in optical and structural characteristics of alpha-irradiated PM-355 SSNTD.

PubMed

Alghamdi, S S; Farooq, W A; Baig, M R; Algarawi, M S; Alrashidi, Talal Mohammed; Ali, Syed Mansoor; Alfaramawi, K

2017-10-01

Pre- and postalpha-exposed PM-355 detectors were irradiated using UV laser with different number of pulses (100, 150, 200, 300, and 400). UV laser beam energy of 20mJ per pulse with a pulse width of 9ns was incident on an area of 19.6mm 2 of the samples. XRD spectra indicated that for both reference and UV-irradiated samples, the structure is amorphous, but the crystallite size increases upon UV irradiation. The same results were obtained from SEM analysis. Optical properties of PM-355 polymeric solid-state nuclear track detectors were also investigated. Absorbance measurements for all PM-355 samples in the range of 200-400nm showed that the absorption edge had a blue shift up to a certain value, and then, it had an oscillating behavior. Photoluminescence spectra of PM-355 at 250nm revealed a decrease in the broadband peak intensity as a function of the number of UV pulses, while the wavelengths corresponding to the peaks had random shifts. Copyright © 2017 Elsevier Ltd. All rights reserved.

Compact and portable multiline UV and visible Raman lasers in hydrogen-filled HC-PCF.

PubMed

Wang, Y Y; Couny, F; Light, P S; Mangan, B J; Benabid, F

2010-04-15

We report on the realization of compact UV visible multiline Raman lasers based on two types of hydrogen-filled hollow-core photonic crystal fiber. The first, with a large pitch Kagome lattice structure, offers a broad spectral coverage from near IR through to the much sought after yellow, deep-blue and UV, whereas the other, based on photonic bandgap guidance, presents a pump conversion concentrated in the visible region. The high Raman efficiency achieved through these fibers allows for compact, portable diode-pumped solid-state lasers to be used as pumps. Each discrete component of this laser system exhibits a spectral density several orders of magnitude larger than what is achieved with supercontinuum sources and a narrow linewidth, making it an ideal candidate for forensics and biomedical applications.

Modification of insulating diamond-like films by pulsed UV laser emission

NASA Astrophysics Data System (ADS)

Ageev, V. P.; Glushko, T. N.; Dorfman, V. F.; Kuzmichev, A. V.; Pypkin, B. N.

1991-07-01

The basic regimes of the modification of diamond-like a-C/Si/O:H films by the emission of the KrF laser are investigated. In particular, attention is given to the effect of the graphitization process on the spatial resolution of the dimensional treament. The possibility of the submicron cross-linking of the films using the methods of ablative UV laser lithography is demonstrated.

Solar power satellite system definition study. Volume 4: Silicon solar cell annealing test, phase 1

NASA Technical Reports Server (NTRS)

Walker, F.

1979-01-01

Laser annealing tests were conducted on ten 50 micron cells. Two were control cells that were not irradiated. These showed no loss in output due to exposure to the laser. Two cells were broken in handling. Six cells were successfully tested. All cells tested without breakage showed some recovery. One cell was subjected to two cycles and showed recovery on both cycles. Cells that were moderately degraded appeared to recover more completely than those more severly degraded. Exposure times ranged from two to ten seconds at 500 degrees centigrade. There was some indication that longer exposure was beneficial.

Microstructure and Property Modifications of Cold Rolled IF Steel by Local Laser Annealing

NASA Astrophysics Data System (ADS)

Hallberg, Håkan; Adamski, Frédéric; Baïz, Sarah; Castelnau, Olivier

2017-10-01

Laser annealing experiments are performed on cold rolled IF steel whereby highly localized microstructure and property modification are achieved. The microstructure is seen to develop by strongly heterogeneous recrystallization to provide steep gradients, across the submillimeter scale, of grain size and crystallographic texture. Hardness mapping by microindentation is used to reveal the corresponding gradients in macroscopic properties. A 2D level set model of the microstructure development is established as a tool to further optimize the method and to investigate, for example, the development of grain size variations due to the strong and transient thermal gradient. Particular focus is given to the evolution of the beneficial γ-fiber texture during laser annealing. The simulations indicate that the influence of selective growth based on anisotropic grain boundary properties only has a minor effect on texture evolution compared to heterogeneous stored energy, temperature variations, and nucleation conditions. It is also shown that although the α-fiber has an initial frequency advantage, the higher probability of γ-nucleation, in combination with a higher stored energy driving force in this fiber, promotes a stronger presence of the γ-fiber as also observed in experiments.

Synthesis of graphene and graphene nanostructures by ion implantation and pulsed laser annealing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiaotie; Rudawski, Nicholas G.; Appleton, Bill R.

2016-07-14

In this paper, we report a systematic study that shows how the numerous processing parameters associated with ion implantation (II) and pulsed laser annealing (PLA) can be manipulated to control the quantity and quality of graphene (G), few-layer graphene (FLG), and other carbon nanostructures selectively synthesized in crystalline SiC (c-SiC). Controlled implantations of Si{sup −} plus C{sup −} and Au{sup +} ions in c-SiC showed that both the thickness of the amorphous layer formed by ion damage and the doping effect of the implanted Au enhance the formation of G and FLG during PLA. The relative contributions of the amorphousmore » and doping effects were studied separately, and thermal simulation calculations were used to estimate surface temperatures and to help understand the phase changes occurring during PLA. In addition to the amorphous layer thickness and catalytic doping effects, other enhancement effects were found to depend on other ion species, the annealing environment, PLA fluence and number of pulses, and even laser frequency. Optimum II and PLA conditions are identified and possible mechanisms for selective synthesis of G, FLG, and carbon nanostructures are discussed.« less

Athermal Annealing of Silicon

NASA Astrophysics Data System (ADS)

Fischer, R. P.; Grun, J.; Ting, A.; Felix, C.; Peckerar, M.; Fatemi, M.; Manka, C. K.

1999-11-01

Current semiconductor annealing methods are based on thermal processes which are accompanied by diffusion that degrades the definition of device features or causes other problems. This will be a serious obstacle for the production of next-generation ultra-high density, low power semiconductor devices. Experiments underway at NRL utilize a new annealing method which is much faster than thermal annealing and does not depend upon thermal energy (J. Grun, et al)., Phys. Rev. Letters 78, 1584 (1997).. A 10 J, 30 nsec, 1.053 nm wavelength laser pulse is focussed to approximately 1 mm diameter on a silicon sample. Acoustic and shock waves propagate from the impact region, which deposit mechanical energy into the material and anneal the silicon. Experimental results will be presented on annealing neutron-transmutation-doped (NTD) and ion implanted silicon samples with impurity concentrations from 1 × 10^15-3 × 10^20/cm^3.

Tuneable powerful UV laser system with UV noise eater

NASA Astrophysics Data System (ADS)

Kobtsev, Sergey; Radnatarov, Daba; Khripunov, Sergey; Zarudnev, Yurii

2018-02-01

The present work for the first time presents the study of a laser system delivering into the fibre up to 250 mW of CW radiation tuneable across the 275-310-nm range with the output line width less than 5 GHz and stability of UV output power within 1%. This system can automatically set the output radiation wavelength within the range of 275-310 nm to the precision of 2 pm. UV output power stabilisation is provided by a newly proposed by the authors noise eating technology. This paper discusses details of the developed technology and the results of its application.

Evaluation of UV-fs-LA-MC-ICP-MS for precise in situ copper isotopic microanalysis of cubanite.

PubMed

Ikehata, Kei; Hirata, Takafumi

2013-01-01

We evaluated the capabilities of an in situ method for measuring copper isotopes of cubanite using UV-fs-LA-MC-ICP-MS. A comparison of the UV-fs laser results with those obtained from the NIR-fs laser system shows that there is obviously an improvement in the precision (<0.10‰, 2SE) when using the UV-fs laser. In both wavelength modes, matrix-matched standards are required for reliable in situ copper isotope analysis of cubanite. This method was applied to determinations for copper isotopes of minute cubanite grains in a skarn ore. Copper isotopic ratios of cubanite grains near a weathered surface of the sample are lower than those of intact cubanite grains within the sample, suggesting that selective leaching of heavier copper isotope in primary minerals occurred during weathering.

Flat-plate solar array project process development area process research of non-CZ silicon material

NASA Technical Reports Server (NTRS)

1985-01-01

Three sets of samples were laser processed and then cell processed. The laser processing was carried out on P-type and N-type web at laser power levels from 0.5 joule/sq cm to 2.5 joule/sq cm. Six different liquid dopants were tested (3 phosphorus dopants, 2 boron dopants, 1 aluminum dopant). The laser processed web strips were fabricated into solar cells immediately after laser processing and after various annealing cycles. Spreading resistance measurements made on a number of these samples indicate that the N(+)P (phosphorus doped) junction is approx. 0.2 micrometers deep and suitable for solar cells. However, the P(+)N (or P(+)P) junction is very shallow ( 0.1 micrometers) with a low surface concentration and resulting high resistance. Due to this effect, the fabricated cells are of low efficiency. The maximum efficiency attained was 9.6% on P-type web after a 700 C anneal. The main reason for the low efficiency was a high series resistance in the cell due to a high resistance back contact.

Simulations of a FIR Oscillator with Large Slippage parameter at Jefferson Lab for FIR/UV pump-probe experiments

DOE Office of Scientific and Technical Information (OSTI.GOV)

Benson, Stephen V.; Campbell, L. T.; McNeil, B.W.T.

We previously proposed a dual FEL configuration on the UV Demo FEL at Jefferson Lab that would allow simultaneous lasing at FIR and UV wavelengths. The FIR source would be an FEL oscillator with a short wiggler providing diffraction-limited pulses with pulse energy exceeding 50 microJoules, using the exhaust beam from a UVFEL as the input electron beam. Since the UV FEL requires very short pulses, the input to the FIR FEL is extremely short compared to a slippage length and the usual Slowly Varying Envelope Approximation (SVEA) does not apply. We use a non-SVEA code to simulate this systemmore » both with a small energy spread (UV laser off) and with large energy spread (UV laser on).« less

Non-destructive evaluation of UV pulse laser-induced damage performance of fused silica optics.

PubMed

Huang, Jin; Wang, Fengrui; Liu, Hongjie; Geng, Feng; Jiang, Xiaodong; Sun, Laixi; Ye, Xin; Li, Qingzhi; Wu, Weidong; Zheng, Wanguo; Sun, Dunlu

2017-11-24

The surface laser damage performance of fused silica optics is related to the distribution of surface defects. In this study, we used chemical etching assisted by ultrasound and magnetorheological finishing to modify defect distribution in a fused silica surface, resulting in fused silica samples with different laser damage performance. Non-destructive test methods such as UV laser-induced fluorescence imaging and photo-thermal deflection were used to characterize the surface defects that contribute to the absorption of UV laser radiation. Our results indicate that the two methods can quantitatively distinguish differences in the distribution of absorptive defects in fused silica samples subjected to different post-processing steps. The percentage of fluorescence defects and the weak absorption coefficient were strongly related to the damage threshold and damage density of fused silica optics, as confirmed by the correlation curves built from statistical analysis of experimental data. The results show that non-destructive evaluation methods such as laser-induced fluorescence and photo-thermal absorption can be effectively applied to estimate the damage performance of fused silica optics at 351 nm pulse laser radiation. This indirect evaluation method is effective for laser damage performance assessment of fused silica optics prior to utilization.

Impact of annealing on physical properties of e-beam evaporated polycrystalline CdO thin films for optoelectronic applications

NASA Astrophysics Data System (ADS)

Purohit, Anuradha; Chander, S.; Dhaka, M. S.

2017-04-01

An impact of annealing on the physical properties of polycrystalline CdO thin films is carried out in this study. CdO thin films of thickness 650 nm were fabricated on glass and indium tin oxide (ITO) substrates employing e-beam evaporation technique. The pristine thin films were annealed in air atmosphere at 250 °C, 400 °C and 550 °C for one hour followed by investigation of structural, optical, electrical and morphological properties along with elemental composition using X-ray diffraction (XRD), UV-Vis spectrophotometer, Fourier transform infrared (FTIR) spectrometer, source meter, scanning electron microscopy (SEM) and energy-dispersive spectroscopy (EDS), respectively. XRD patterns confirmed the polycrystalline nature and cubic structure (with space group Fm 3 bar m) of the films. The crystallographic parameters are calculated and found to be influenced by the post-air annealing treatment. The optical study shows that direct band gap is ranging from 1.98 eV to 2.18 eV and found to be decreased with post-annealing. The refractive index and optical conductivity are also increased with annealing temperature. The current-voltage characteristics show ohmic behaviour of the annealed films. The surface morphology is observed to be improved with annealing and grain-size is increased as well as EDS spectrum confirmed the presence of cadmium (Cd) and oxygen (O) in the deposited films.

Effect of annealing temperature on the photoluminescence and scintillation properties of ZnO nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurudirek, Sinem V.; Menkara, H.; Klein, Benjamin D. B.

2018-01-01

The effect of the annealing to enhance the photoluminescence (PL) and scintillation properties, as determined by pulse height distribution of alpha particle irradiation, has been investigated for solution grown ZnO nanorods For this investigation the ZnO nanorod arrays were grown on glass for 22 h at 95 ◦ C as a substrate using a solution based hydrothermal technique. The samples were first annealed for different times (30, 60, 90 and 120 min) at 300 ◦ C and then at different temperatures (100 ◦ C–600 ◦ C) in order to determine the optimum annealing time and temperature, respectively. Before annealing, themore » ZnO nanorod arrays showed a broad yellow–orange visible and near-band gap UV emission peaks. After annealing in a forming gas atmosphere, the intensity of the sub-band gap PL was significantly reduced and the near-band gap PL emission intensity correspondingly increased (especially at temperatures higher than 100 ◦ C). Based on the ratio of the peak intensity ratio before and after annealing, it was concluded that samples at 350 ◦ C for 90 min resulted in the best near-band gap PL emission. Similarly, the analysis of the pulse height spectrum resulting from alpha particles revealed that ZnO nanorod arrays similarly annealed at 350 ◦ C for 90 min exhibited the highest scintillation response.« less

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

PubMed Central

Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

2016-01-01

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency. PMID:27194181

Oxidation-Based Continuous Laser Writing in Vertical Nano-Crystalline Graphite Thin Films

NASA Astrophysics Data System (ADS)

Loisel, Loïc; Florea, Ileana; Cojocaru, Costel-Sorin; Tay, Beng Kang; Lebental, Bérengère

2016-05-01

Nano and femtosecond laser writing are becoming very popular techniques for patterning carbon-based materials, as they are single-step processes enabling the drawing of complex shapes without photoresist. However, pulsed laser writing requires costly laser sources and is known to cause damages to the surrounding material. By comparison, continuous-wave lasers are cheap, stable and provide energy at a more moderate rate. Here, we show that a continuous-wave laser may be used to pattern vertical nano-crystalline graphite thin films with very few macroscale defects. Moreover, a spatially resolved study of the impact of the annealing to the crystalline structure and to the oxygen ingress in the film is provided: amorphization, matter removal and high oxygen content at the center of the beam; sp2 clustering and low oxygen content at its periphery. These data strongly suggest that amorphization and matter removal are controlled by carbon oxidation. The simultaneous occurrence of oxidation and amorphization results in a unique evolution of the Raman spectra as a function of annealing time, with a decrease of the I(D)/I(G) values but an upshift of the G peak frequency.

Influence of annealing temperature on optical properties of Al doped ZnO nanoparticles via sol-gel methods

NASA Astrophysics Data System (ADS)

Rashid, Affa Rozana Abd; Hazwani, Tuan Nur; Mukhtar, Wan Maisarah; Taib, Nur Athirah Mohd

2018-06-01

Zinc oxide (ZnO) thin films have become technologically important materials due to their wide range of electrical and optical properties. The characteristics can be further adjusted by adequate doping processes. The effect of dopant concentration of Al, heating treatment and annealing in reducing atmosphere on the optical properties of the thin films is discussed. Undoped and aluminum-doped zinc oxide (AZO) thin films are prepared by the sol-gel method. Zinc acetate dihydrate, 2-methoxyethanol and monoethanolamine are used as precursor, solvent and stabilizer. In the case of AZO, aluminum nitrate nanohydrate is added to the precursor solution with an atomic percentage equal to 0 %, 1 %, 2 % and 3 % of Al. The multi thin layers are transformed into ZnO upon annealing at 450 °C and 500 °C. The optical properties such as transmittance, absorbance, band gap and refractive index of the thin films have been investigated by using UV-Visible Spectroscopy (UV-Vis). The results show that the effect of aluminium dopant concentration on the optical properties is depend on the post-heat treatment of the films. By doping with Al, the transmittance spectra in visible range increased and widen the band gap of ZnO which might due to Burstein-moss effects.

Tm-doped TiO2 and Tm2Ti2O7 pyrochlore nanoparticles: enhancing the photocatalytic activity of rutile with a pyrochlore phase.

PubMed

De Los Santos, Desiré M; Navas, Javier; Aguilar, Teresa; Sánchez-Coronilla, Antonio; Fernández-Lorenzo, Concha; Alcántara, Rodrigo; Piñero, Jose Carlos; Blanco, Ginesa; Martín-Calleja, Joaquín

2015-01-01

Tm-doped TiO2 nanoparticles were synthesized using a water-controlled hydrolysis reaction. Analysis was performed in order to determine the influence of the dopant concentration and annealing temperature on the phase, crystallinity, and electronic and optical properties of the resulting material. Various characterization techniques were utilized such as X-ray diffraction, Raman spectroscopy, X-ray photoelectron spectroscopy and UV-vis spectroscopy. For the samples annealed at 773 and 973 K, anatase phase TiO2 was obtained, predominantly internally doped with Tm(3+). ICP-AES showed that a doping concentration of up to 5.8 atom % was obtained without reducing the crystallinity of the samples. The presence of Tm(3+) was confirmed by X-ray photoelectron spectroscopy and UV-vis spectroscopy: the incorporation of Tm(3+) was confirmed by the generation of new absorption bands that could be assigned to Tm(3+) transitions. Furthermore, when the samples were annealed at 1173 K, a pyrochlore phase (Tm2Ti2O7) mixed with TiO2 was obtained with a predominant rutile phase. The photodegradation of methylene blue showed that this pyrochlore phase enhanced the photocatalytic activity of the rutile phase.

Pulsed laser facilities operating from UV to IR at the Gas Laser Lab of the Lebedev Institute

NASA Astrophysics Data System (ADS)

Ionin, Andrei; Kholin, Igor; Vasil'Ev, Boris; Zvorykin, Vladimir

2003-05-01

Pulsed laser facilities developed at the Gas Lasers Lab of the Lebedev Physics Institute and their applications for different laser-matter interactions are discussed. The lasers operating from UV to mid-IR spectral region are as follows: e-beam pumped KrF laser (λ= 0.248 μm) with output energy 100 J; e-beam sustained discharge CO2(10.6 μm) and fundamental band CO (5-6 μm) lasers with output energy up to ~1 kJ; overtone CO laser (2.5-4.2 μm) with output energy ~ 50 J and N2O laser (10.9 μm) with output energy of 100 J; optically pumped NH3 laser (11-14 μm). Special attention is paid to an e-beam sustained discharge Ar-Xe laser (1.73 μm ~ 100 J) as a potential candidate for a laser-propulsion facility. The high energy laser facilities are used for interaction of laser radiation with polymer materials, metals, graphite, rocks, etc.

Nanoscale measurements of phosphorous-induced lattice expansion in nanosecond laser annealed germanium

NASA Astrophysics Data System (ADS)

Boninelli, S.; Milazzo, R.; Carles, R.; Houdellier, F.; Duffy, R.; Huet, K.; La Magna, A.; Napolitani, E.; Cristiano, F.

2018-05-01

Laser Thermal Annealing (LTA) at various energy densities was used to recrystallize and activate amorphized germanium doped with phosphorous by ion implantation. The structural modifications induced during the recrystallization and the related dopant diffusion were first investigated. After LTA at low energy densities, the P electrical activation was poor while the dopant distribution was mainly localized in the polycrystalline Ge resulting from the anneal. Conversely, full dopant activation (up to 1 × 1020 cm-3) in a perfectly recrystallized material was observed after annealing at higher energy densities. Measurements of lattice parameters performed on the fully activated structures show that P doping results in a lattice expansion, with a perpendicular lattice strain per atom βPs = +0.7 ± 0.1 Å3. This clearly indicates that, despite the small atomic radius of P compared to Ge, the "electronic contribution" to the lattice parameter modification (due to the increased hydrostatic deformation potential in the conduction band of P doped Ge) is larger than the "size mismatch contribution" associated with the atomic radii. Such behavior, predicted by theory, is observed experimentally for the first time, thanks to the high sensitivity of the measurement techniques used in this work.

Processing of silicon solar cells by ion implantation and laser annealing

NASA Technical Reports Server (NTRS)

Minnucci, J. A.; Matthei, K. W.; Greenwald, A. C.

1981-01-01

Methods to improve the radiation tolerance of silicon cells for spacecraft use are described. The major emphasis of the program was to reduce the process-induced carbon and oxygen impurities in the junction and base regions of the solar cell, and to measure the effect of reduced impurity levels on the radiation tolerance of cells. Substrates of 0.1, 1.0 and 10.0 ohm-cm float-zone material were used as starting material in the process sequence. High-dose, low-energy ion implantation was used to form the junction in n+p structures. Implant annealing was performed by conventional furnace techniques and by pulsed laser and pulsed electron beam annealing. Cells were tested for radiation tolerance at Spire and NASA-LeRC. After irradiation by 1 MeV electrons to a fluence of 10 to the 16th power per sq cm, the cells tested at Spire showed no significant process induced variations in radiation tolerance. However, for cells tested at Lewis to a fluence of 10 to the 15th power per sq cm, ion-implanted cells annealed in vacuum by pulsed electron beam consistently showed the best radiation tolerance for all cell resistivities.

Effect of non-vacuum thermal annealing on high indium content InGaN films deposited by pulsed laser deposition.

PubMed

Wang, Tzu-Yu; Ou, Sin-Liang; Shen, Kun-Ching; Wuu, Dong-Sing

2013-03-25

InGaN films with 33% and 60% indium contents were deposited by pulsed laser deposition (PLD) at a low growth temperature of 300 °C. The films were then annealed at 500-800 °C in the non-vacuum furnace for 15 min with an addition of N(2) atmosphere. X-ray diffraction results indicate that the indium contents in these two films were raised to 41% and 63%, respectively, after annealing in furnace. In(2)O(3) phase was formed on InGaN surface during the annealing process, which can be clearly observed by the measurements of auger electron spectroscopy, transmission electron microscopy and x-ray photoelectron spectroscopy. Due to the obstruction of indium out-diffusion by forming In(2)O(3) on surface, it leads to the efficient increment in indium content of InGaN layer. In addition, the surface roughness was greatly improved by removing In(2)O(3) with the etching treatment in HCl solution. Micro-photoluminescence measurement was performed to analyze the emission property of InGaN layer. For the as-grown InGaN with 33% indium content, the emission wavelength was gradually shifted from 552 to 618 nm with increasing the annealing temperature to 800 °C. It reveals the InGaN films have high potential in optoelectronic applications.

Coupled optical resonance laser locking.

PubMed

Burd, S C; du Toit, P J W; Uys, H

2014-10-20

We have demonstrated simultaneous laser frequency stabilization of a UV and IR laser, to coupled transitions of ions in the same spectroscopic sample, by detecting only the absorption of the UV laser. Separate signals for locking the different lasers are obtained by modulating each laser at a different frequency and using lock-in detection of a single photodiode signal. Experimentally, we simultaneously lock a 369 nm and a 935 nm laser to the (2)S(1/2) → (2)(P(1/2) and (2)D(3/2) → (3)D([3/2]1/2) transitions, respectively, of Yb(+) ions generated in a hollow cathode discharge lamp. Stabilized lasers at these frequencies are required for cooling and trapping Yb(+) ions, used in quantum information and in high precision metrology experiments. This technique should be readily applicable to other ion and neutral atom systems requiring multiple stabilized lasers.

Effects of Rapid Thermal Annealing on the Structural, Electrical, and Optical Properties of Zr-Doped ZnO Thin Films Grown by Atomic Layer Deposition.

PubMed

Wu, Jingjin; Zhao, Yinchao; Zhao, Ce Zhou; Yang, Li; Lu, Qifeng; Zhang, Qian; Smith, Jeremy; Zhao, Yongming

2016-08-13

The 4 at. % zirconium-doped zinc oxide (ZnO:Zr) films grown by atomic layer deposition (ALD) were annealed at various temperatures ranging from 350 to 950 °C. The structural, electrical, and optical properties of rapid thermal annealing (RTA) treated ZnO:Zr films have been evaluated to find out the stability limit. It was found that the grain size increased at 350 °C and decreased between 350 and 850 °C, while creeping up again at 850 °C. UV-vis characterization shows that the optical band gap shifts towards larger wavelengths. The Hall measurement shows that the resistivity almost keeps constant at low annealing temperatures, and increases rapidly after treatment at 750 °C due to the effect of both the carrier concentration and the Hall mobility. The best annealing temperature is found in the range of 350-550 °C. The ZnO:Zr film-coated glass substrates show good optical and electrical performance up to 550 °C during superstrate thin film solar cell deposition.

Nanoimprinted polymer lasers with threshold below 100 W/cm2 using mixed-order distributed feedback resonators.

PubMed

Wang, Yue; Tsiminis, Georgios; Kanibolotsky, Alexander L; Skabara, Peter J; Samuel, Ifor D W; Turnbull, Graham A

2013-06-17

Organic semiconductor lasers were fabricated by UV-nanoimprint lithography with thresholds as low as 57 W/cm(2) under 4 ns pulsed operation. The nanoimprinted lasers employed mixed-order distributed feedback resonators, with second-order gratings surrounded by first-order gratings, combined with a light-emitting conjugated polymer. They were pumped by InGaN LEDs to produce green-emitting lasers, with thresholds of 208 W/cm(2) (102 nJ/pulse). These hybrid lasers incorporate a scalable UV-nanoimprint lithography process, compatible with high-performance LEDs, therefore we have demonstrated a coherent, compact, low-cost light source.

Optical-fiber-based laser-induced breakdown spectroscopy for detection of early caries

NASA Astrophysics Data System (ADS)

Sasazawa, Shuhei; Kakino, Satoko; Matsuura, Yuji

2015-06-01

A laser-induced breakdown spectroscopy (LIBS) system targeting for the in vivo analysis of tooth enamel is described. The system is planned to enable real-time analysis of teeth during laser dental treatment by utilizing a hollow optical fiber that transmits both Q-switched Nd:YAG laser light for LIBS and infrared Er:YAG laser light for tooth ablation. The sensitivity of caries detection was substantially improved by expanding the spectral region under analysis to ultraviolet (UV) light and by focusing on emission peaks of Zn in the UV region. Subsequently, early caries were distinguished from healthy teeth with accuracy rates above 80% in vitro.

Reversible photoinduced spectral change in Eu2O3 at room temperature

NASA Astrophysics Data System (ADS)

Mochizuki, Shosuke; Nakanishi, Tauto; Suzuki, Yuya; Ishi, Kimihiro

2001-12-01

When Eu2O3 powder compact and film are irradiated with ultraviolet (UV) laser light in a vacuum, their photoluminescence (PL) spectra change from a red sharp-line structure to a white broad band, which can be clearly seen with the naked eye. After removing the UV laser light, the white PL continues for more than several months at room temperature under room light, in spite of any changes of atmosphere. By irradiating with the same UV laser light at room temperature under O2 gas atmosphere, the original red PL state reappears. Such a reversible phenomenon may well yield materials for white-light-emitting devices and erasable optical storage.

Investigation of Highly Unsteady Aerodynamics of Flapping Wings With/Without a Flexible Training Edge Using High Resolution MTV Measurements

DTIC Science & Technology

2013-10-14

Aerodynamics Laboratory (TMUAL) at MSU. This modification , which was completed successfully, included two parts: (I) the addition of two large...quartz inserts and the 3 DOF motion system. The sketch also depicts a typical UV laser beam path for Molecular Tagging Velocimetry measurements UV laser ... beam UV mirror 3 IV.2. Airfoil Fabrication Using 3D Printing Methods For the parts of the investigation focused on studying the effect of

Copper oxide thin films anchored on glass substrate by sol gel spin coating technique

NASA Astrophysics Data System (ADS)

Krishnaprabha, M.; Venu, M. Parvathy; Pattabi, Manjunatha

2018-05-01

Owing to the excellent optical, thermal, electrical and photocatalytic properties, copper oxide nanoparticles/films have found applications in optoelectronic devices like solar/photovoltaic cells, lithium ion batteries, gas sensors, catalysts, magnetic storage media etc. Copper oxide is a p-type semiconductor material having a band gap energy varying from 1.2 eV-2.1 eV. Syzygium Samarangense fruit extract was used as reducing agent to synthesize copper oxide nanostructures at room temperature from 10 mM copper sulphate pentahydrate solution. The synthesized nanostructures are deposited onto glass substrate by spin coating followed by annealing the film at 200 °C. Both the copper oxide colloid and films are characterized using UV-Vis spectroscopy, field emission scanning electron microscopy (FESEM) and energy dispersive spectroscopy (EDS) techniques. Presence of 2 peaks at 500 nm and a broad peak centered around 800 nm in the UV-Vis absorbance spectra of copper oxide colloid/films is indicative of the formation of anisotropic copper oxide nanostructures is confirmed by the FESEM images which showed the presence of triangular shaped and rod shaped particles. The rod shaped particles inside island like structures were found in unannealed films whereas the annealed films contained different shaped particles with reduced sizes. The elemental analysis using EDS spectra of copper oxide nanoparticles/films showed the presence of both copper and oxygen. Electrical properties of copper oxide nanoparticles are affected due to quantum size effect. The electrical studies carried out on both unannealed and annealed copper oxide films revealed an increase in resistivity with annealing of the films.

Influence of UV illumination on the cold temperature operation of a LiNbO(3) Q-switched Nd:YAG laser.

PubMed

Cole, Brian; Goldberg, Lew; King, Vernon; Leach, Jeff

2010-04-26

UV illumination of a lithium niobate Q-switch was demonstrated as an effective means to eliminate a loss in hold-off and associated prelasing that occurs under cold temperature operation of Q-switched lasers. This degradation occurs due to the pyroelectric effect, where an accumulation of charge on crystal faces results in a reduction in the Q-switch hold-off and a spatially variable loss of the Q-switch in its high-transmission state, both resulting in lowering of the maximum Q-switched pulse energy. With UV illumination, the resulting creation of photo-generated carriers was shown to be effective in eliminating both of these effects. A Q-switched Nd:YAG laser utilizing UV-illuminated LiNbO(3) was shown to operate under cold temperatures without prelasing or spatially variable loss.

Development of injector/amplifier XUV lasers and initial studies of ultrashort pulse UV multiphoton ionization

NASA Astrophysics Data System (ADS)

Key, Michael H.; Blyth, W. J.; Cairns, Gerald F.; Damerell, A. R.; Dangor, A. E.; Danson, Colin N.; Evans, J. M.; Hirst, Graeme J.; Holden, M.; Hooker, Chris J.; Houliston, J. R.; Krishnan, J.; Lewis, Ciaran L. S.; Lister, J. M. D.; MacPhee, Andrew G.; Najmudin, Z.; Neely, David; Norreys, Peter A.; Offenberger, Allen A.; Osvay, Karoly; Pert, Geoffrey J.; Preston, S. G.; Ramsden, Stuart A.; Ross, Ian N.; Sibbett, Wilson; Tallents, Gregory J.; Smith, C.; Wark, Justin S.; Zhang, Jie

1994-02-01

An injector-amplifier architecture for XUV lasers has been developed and demonstrated using the Ge XXIII collisional laser. Results are described for injection into single and double plasma amplifiers. Prismatic lens-like and higher order aberrations in the amplifier are considered. Limitations on ultimate brightness are discussed and also scaling to operation at shorter wavelengths. A preliminary study has been made of UV multiphoton ionization using 300 fs pulses at high intensity.

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

Electrically driven deep ultraviolet MgZnO lasers at room temperature

DOE PAGES

Suja, Mohammad; Bashar, Sunayna Binte; Debnath, Bishwajit; ...

2017-06-01

Semiconductor lasers in the deep ultraviolet (UV) range have numerous potential applications ranging from water purification and medical diagnosis to high-density data storage and flexible displays. Nevertheless, very little success was achieved in the realization of electrically driven deep UV semiconductor lasers to date. Here, we report the fabrication and characterization of deep UV MgZnO semiconductor lasers. These lasers are operated with continuous current mode at room temperature and the shortest wavelength reaches 284 nm. The wide bandgap MgZnO thin films with various Mg mole fractions were grown on c-sapphire substrate using radio-frequency plasma assisted molecular beam epitaxy. Metal-semiconductor-metal (MSM)more » random laser devices were fabricated using lithography and metallization processes. Besides the demonstration of scalable emission wavelength, very low threshold current densities of 29-33 A/cm 2 are achieved. Furthermore, numerical modeling reveals that impact ionization process is responsible for the generation of hole carriers in the MgZnO MSM devices. The interaction of electrons and holes leads to radiative excitonic recombination and subsequent coherent random lasing.« less

The Influence of Geometrical Structure of AlInGaN Double Quantum Well (DQWs) UV Diode Laser on Its Performance and Operating Parameters

NASA Astrophysics Data System (ADS)

Ghazai, A. J.; Thahab, S. M.; Hassan, H. Abu; Hassan, Z.

2010-07-01

The development of efficient MQWs active regions of quaternary InAlGaN in the ultraviolet (UV) region is an engaging challenge by itself. Demonstrating lasers at such low wavelength will require resolving a number of materials, growth and device design issues. However, the quaternary AlInGaN represents a more versatile material since the bandgap and lattice constant can be independently varied. We report a quaternary AlInGaN double-quantum wells (DQWs) UV laser diode (LDs) study by using the simulation program of Integrated System Engineering-Technical Computer Aided Design (ISE TCAD). Advanced physical models of semiconductor properties were used. In this paper, the enhancement in the performance of AlInGaN laser diode can be achieved by optimizing the laser structure geometry design. The AlInGaN laser diodes operating parameters such as internal quantum efficiency ηi, internal loss αi and transparency threshold current density show effective improvements that contribute to a better performance.

Inferred UV Fluence Focal-Spot Profiles from Soft X-Ray Pinhole Camera Measurements on OMEGA

NASA Astrophysics Data System (ADS)

Theobald, W.; Sorce, C.; Epstein, R.; Keck, R. L.; Kellogg, C.; Kessler, T. J.; Kwiatkowski, J.; Marshall, F. J.; Seka, W.; Shvydky, A.; Stoeckl, C.

2017-10-01

The drive uniformity of OMEGA cryogenic implosions is affected by UV beamfluence variations on target, which require careful monitoring at full laser power. This is routinely performed with multiple pinhole cameras equipped with charge-injection devices (CID's) that record the x-ray emission in the 3- to 7-keV photon energy range from an Au-coated target. The technique relies on the knowledge of the relation between x-ray fluence Fx and UV fluence FUV ,Fx FUVγ , with a measured γ = 3.42 for the CID-based diagnostic and 1-ns laser pulse. It is demonstrated here that using a back-thinned charge-coupled-device camera with softer filtration for x-rays with photon energies <2 keV and well calibrated pinhole provides a lower γ 2 and a larger dynamic range in the measured UV fluence. Inferred UV fluence profiles were measured for 100-ps and 1-ns laser pulses and were compared to directly measured profiles from a UV equivalent-target-plane diagnostic. Good agreement between both techniques is reported for selected beams. This material is based upon work supported by the Department of Energy National Nuclear Security Administration under Award Number DE-NA0001944.

In vitro behavior of MC3T3-E1 preosteoblast with different annealing temperature titania nanotubes.

PubMed

Yu, W Q; Zhang, Y L; Jiang, X Q; Zhang, F Q

2010-10-01

Titanium oxide nanotube layers by anodization have excellent potential for dental implants because of good bone cell promotion. It is necessary to evaluate osteoblast behavior on different annealing temperature titania nanotubes for actual implant designs.  Scanning Electron Microscopy, X-Ray polycrystalline Diffractometer (XRD), X-ray photoelectron Spectroscope, and Atomic Force Microscopy (AFM) were used to characterize the different annealing temperature titania nanotubes. Confocal laser scanning microscopy, MTT, and Alizarin Red-S staining were used to evaluate the MC3T3-E1 preosteoblast behavior on different annealing temperature nanotubes.  The tubular morphology was constant when annealed at 450°C and 550°C, but collapsed when annealed at 650°C. XRD exhibited the crystal form of nanotubes after formation (amorphous), after annealing at 450°C (anatase), and after annealing at 550°C (anatase/rutile). Annealing led to the complete loss of fluorine on nanotubes at 550°C. Average surface roughness of different annealing temperature nanotubes showed no difference by AFM analysis. The proliferation and mineralization of preostoblasts cultured on anatase or anatase/rutile nanotube layers were shown to be significantly higher than smooth, amorphous nanotube layers.  Annealing can change the crystal form and composition of nanotubes. The nanotubes after annealing can promote osteoblast proliferation and mineralization in vitro. © 2010 John Wiley & Sons A/S.

Compact lasing system at 13.5-nm to ground state of LiIII at 2Hz

NASA Astrophysics Data System (ADS)

Goltsov, A. Y.; Korobkin, D.; Nam, C. H.; Suckewer, Szymon

1997-11-01

The recent results of the demonstration of the lasing action at 13.5 nm in transition to ground state of LiIII at 2 Hz repetition rate using two lasers is being presented in this paper. A gain length of GL approximately equals 5.5 was measured in the 5 mm long, 0.3 mm diameter, LiF microcapillary using a 50 mJ, 250 fsec UV laser beam. The initial plasma was created in the microcapillary by a low power, relatively long pulse Nd/YAG laser. In order to shed light on observed unusually high efficiency of the ionization of the atoms in microcapillaries, the subpicosecond UV laser beam transmissions through the plasma in microcapillaries were measured. Strong dependence of the beam transmission on the delay time between inial plasma formation with the Nd/YAG laser and the sub-picosecond UV laser was recorded. The final part of the paper discusses some necessary conditions for an extension of the present results towards the shorter wavelength lasers with an emphasis on the presently conducted experiments at Princeton University for the generation gain at 4.8 nm in BV.

High speed micromachining with high power UV laser

NASA Astrophysics Data System (ADS)

Patel, Rajesh S.; Bovatsek, James M.

2013-03-01

Increasing demand for creating fine features with high accuracy in manufacturing of electronic mobile devices has fueled growth for lasers in manufacturing. High power, high repetition rate ultraviolet (UV) lasers provide an opportunity to implement a cost effective high quality, high throughput micromachining process in a 24/7 manufacturing environment. The energy available per pulse and the pulse repetition frequency (PRF) of diode pumped solid state (DPSS) nanosecond UV lasers have increased steadily over the years. Efficient use of the available energy from a laser is important to generate accurate fine features at a high speed with high quality. To achieve maximum material removal and minimal thermal damage for any laser micromachining application, use of the optimal process parameters including energy density or fluence (J/cm2), pulse width, and repetition rate is important. In this study we present a new high power, high PRF QuasarR 355-40 laser from Spectra-Physics with TimeShiftTM technology for unique software adjustable pulse width, pulse splitting, and pulse shaping capabilities. The benefits of these features for micromachining include improved throughput and quality. Specific example and results of silicon scribing are described to demonstrate the processing benefits of the Quasar's available power, PRF, and TimeShift technology.

Angular filter refractometry analysis using simulated annealing [An improved method for characterizing plasma density profiles using angular filter refractometry

DOE PAGES

Angland, P.; Haberberger, D.; Ivancic, S. T.; ...

2017-10-30

Here, a new method of analysis for angular filter refractometry images was developed to characterize laser-produced, long-scale-length plasmas using an annealing algorithm to iterative converge upon a solution. Angular filter refractometry (AFR) is a novel technique used to characterize the density pro files of laser-produced, long-scale-length plasmas. A synthetic AFR image is constructed by a user-defined density profile described by eight parameters, and the algorithm systematically alters the parameters until the comparison is optimized. The optimization and statistical uncertainty calculation is based on a minimization of themore » $$\\chi$$2 test statistic. The algorithm was successfully applied to experimental data of plasma expanding from a flat, laser-irradiated target, resulting in average uncertainty in the density profile of 5-10% in the region of interest.« less

Angular filter refractometry analysis using simulated annealing [An improved method for characterizing plasma density profiles using angular filter refractometry

DOE Office of Scientific and Technical Information (OSTI.GOV)

Angland, P.; Haberberger, D.; Ivancic, S. T.

Here, a new method of analysis for angular filter refractometry images was developed to characterize laser-produced, long-scale-length plasmas using an annealing algorithm to iterative converge upon a solution. Angular filter refractometry (AFR) is a novel technique used to characterize the density pro files of laser-produced, long-scale-length plasmas. A synthetic AFR image is constructed by a user-defined density profile described by eight parameters, and the algorithm systematically alters the parameters until the comparison is optimized. The optimization and statistical uncertainty calculation is based on a minimization of themore » $$\\chi$$2 test statistic. The algorithm was successfully applied to experimental data of plasma expanding from a flat, laser-irradiated target, resulting in average uncertainty in the density profile of 5-10% in the region of interest.« less

One - step nanosecond laser microstructuring, sulfur hyperdoping, and annealing of silicon surfaces in liquid carbondisulfide

NASA Astrophysics Data System (ADS)

Van Luong, Nguyen; Danilov, P. A.; Ionin, A. A.; Khmel'nitskii, P. A.; Kudryashov, S. I.; Mel'nik, N. N.; Saraeva, I. N.; Смirnov, H. A.; Rudenko, A. A.; Zayarny, D. A.

2017-09-01

We perform a single-shot IR nanosecond laser processing of commercial silicon wafers in ambient air and under a 2 mm thick carbon disulfide liquid layer. We characterize the surface spots modified in the liquid ambient and the spots ablated under the same conditions in air in terms of its surface topography, chemical composition, band-structure modification, and crystalline structure by means of SEM and EDX microscopy, as well as of FT-IR and Raman spectroscopy. These studies indicate that single-step microstructuring and deep (up to 2-3% on the surface) hyperdoping of the crystalline silicon in its submicron surface layer, preserving via pulsed laser annealing its crystallinity and providing high (103 - 104 cm-1) spectrally at near- and mid-IR absorption coefficients, can be obtained in this novel approach, which is very promising for thin - film silicon photovoltaic devices

Control over photo-inscription and thermal annealing to obtain high-quality Bragg gratings in doped PMMA optical fibers.

PubMed

Hu, Xuehao; Kinet, Damien; Mégret, Patrice; Caucheteur, Christophe

2016-07-01

Bragg gratings are photo-inscribed in trans-4-stilbenemethanol doped PMMA fibers using a 325 nm He-Cd laser and a phase mask. Two distinct behaviors are reported depending on the laser power density. In the high-density regime with 637  mW/mm², the grating reflectivity is stable over time after the writing process, but the reflected spectrum is of limited quality, as the grating length is limited to the laser width (1.2 mm). The beam is then enlarged to 6 mm, decreasing the power density to 127  mW/mm². In this case, the grating reflectivity strongly decays after the writing process. A fortunate property here results from the recovery of the initial reflectivity using a post-inscription thermal annealing. Both behaviors are attributed to the evolution between trans- and cis-isomers.

Low temperature deactivation of Ge heavily n-type doped by ion implantation and laser thermal annealing

NASA Astrophysics Data System (ADS)

Milazzo, R.; Impellizzeri, G.; Piccinotti, D.; De Salvador, D.; Portavoce, A.; La Magna, A.; Fortunato, G.; Mangelinck, D.; Privitera, V.; Carnera, A.; Napolitani, E.

2017-01-01

Heavy doping of Ge is crucial for several advanced micro- and optoelectronic applications, but, at the same time, it still remains extremely challenging. Ge heavily n-type doped at a concentration of 1 × 1020 cm-3 by As ion implantation and melting laser thermal annealing (LTA) is shown here to be highly metastable. Upon post-LTA conventional thermal annealing As electrically deactivates already at 350 °C reaching an active concentration of ˜4 × 1019 cm-3. No significant As diffusion is detected up to 450 °C, where the As activation decreases further to ˜3 × 1019 cm-3. The reason for the observed detrimental deactivation was investigated by Atom Probe Tomography and in situ High Resolution X-Ray Diffraction measurements. In general, the thermal stability of heavily doped Ge layers needs to be carefully evaluated because, as shown here, deactivation might occur at very low temperatures, close to those required for low resistivity Ohmic contacting of n-type Ge.

Nanosecond laser ablated copper superhydrophobic surface with tunable ultrahigh adhesion and its renewability with low temperature annealing

NASA Astrophysics Data System (ADS)

He, An; Liu, Wenwen; Xue, Wei; Yang, Huan; Cao, Yu

2018-03-01

Recently, metallic superhydrophobic surfaces with ultrahigh adhesion have got plentiful attention on account of their significance in scientific researches and industrial applications like droplet transport, drug delivery and novel microfluidic devices. However, the long lead time and transience hindered its in-depth development and industrial application. In this work, nanosecond laser ablation was carried out to construct grid of micro-grooves on copper surface, whereafter, by applying fast ethanol assisted low-temperature annealing, we obtained surface with superhydrophobicity and ultrahigh adhesion within hours. And the ultrahigh adhesion force was found tunable by varying the groove spacing. Using ultrasonic cleaning as the simulation of natural wear and tear in service, the renewability of superhydrophobicity was also investigated, and the result shows that the contact angle can rehabilitate promptly by the processing of ethanol assisted low-temperature annealing, which gives a promising fast and cheap circuitous strategy to realize the long wish durable metallic superhydrophobic surfaces in practical applications.

Laser micromachining of optical devices

NASA Astrophysics Data System (ADS)

Kopitkovas, Giedrius; Lippert, Thomas; David, Christian; Sulcas, Rokas; Hobley, Jonathan; Wokaun, Alexander J.; Gobrecht, Jens

2004-10-01

The combination of a gray tone phase mask with a laser assisted wet etching process was applied to fabricate complex microstructures in UV transparent dielectric materials. This one-step method allows the generation of arrays of plano-convex and Fresnel micro-lenses using a conventional XeCl excimer laser and an absorbing liquid, which is in contact with the UV transparent material. An array of plano-convex micro-lenses was tested as beam homogenizer for a high power XeCl excimer and ps Nd:YAG laser. The roughness of the etched features varies from several μm to 10 nm, depending on the laser fluence and concentration of the dye in the organic liquid. The etching process can be divided into several etching mechanisms which vary with laser fluence.

Fabrication of optical waveguides using laser direct writing method

NASA Astrophysics Data System (ADS)

Cho, Sung H.; Kim, Jung Min; Kim, Jae G.; Chang, Won S.; Lee, Eung S.

2004-09-01

Laser direct writing (LDW) process is developed using 3-rd harmonic Diode Pumped Solid State Laser (DPSSL) with the near UV wavelength of 355 nm. Photo-sensitive curable polymer is irradiated by UV laser and developed using polymer solvent to obtain quasi-3D patterns. We performed basic experiments for the various process conditions such as laser power, writing speed, laser focus, and optical polymer property to get the optimal conditions. This process could be applied to fabricate a single-mode waveguide without expensive mask projection method. Experimentally, the patterns of trapezoidal shape were manufactured into dimension of 8.4μm width and 7.5μm height. Propagation loss of planar waveguide was 1.42 dB/cm at wavelength of 1,550 nm.

Quantum Phenomena in High Energy Density Plasmas

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murnane, Margaret; Kapteyn, Henry

The possibility of implementing efficient (phase matched) HHG upconversion of deep- UV lasers in multiply-ionized plasmas, with potentially unprecedented conversion efficiency is a fascinating prospect. HHG results from the extreme nonlinear response of matter to intense laser light:high harmonics are radiated as a result of a quantum coherent electron recollision process that occurs during laser field ionization of an atom. Under current support from this grant in work published in Science in 2015, we discovered a new regime of bright HHG in highly-ionized plasmas driven by intense UV lasers, that generates bright harmonics to photon energies >280eV

Generation of radicals in hard biological tissues under the action of laser radiation

NASA Astrophysics Data System (ADS)

Sviridov, Alexander P.; Bagratashvili, Victor N.; Sobol, Emil N.; Omelchenko, Alexander I.; Lunina, Elena V.; Zhitnev, Yurii N.; Markaryan, Galina L.; Lunin, Valerii V.

2002-07-01

The formation of radicals upon UV and IR laser irradiation of some biological tissues and their components was studied by the EPR technique. The radical decay kinetics in body tissue specimens after their irradiation with UV light were described by various models. By the spin trapping technique, it was shown that radicals were not produced during IR laser irradiation of cartilaginous tissue. A change in optical absorption spectra and the dynamics of optical density of cartilaginous tissue, fish scale, and a collagen film under exposure to laser radiation in an air, oxygen, and nitrogen atmosphere was studied.

Detection of elemental mercury by multimode diode laser correlation spectroscopy.

PubMed

Lou, Xiutao; Somesfalean, Gabriel; Svanberg, Sune; Zhang, Zhiguo; Wu, Shaohua

2012-02-27

We demonstrate a method for elemental mercury detection based on correlation spectroscopy employing UV laser radiation generated by sum-frequency mixing of two visible multimode diode lasers. Resonance matching of the multimode UV laser is achieved in a wide wavelength range and with good tolerance for various operating conditions. Large mode-hops provide an off-resonance baseline, eliminating interferences from other gas species with broadband absorption. A sensitivity of 1 μg/m3 is obtained for a 1-m path length and 30-s integration time. The performance of the system shows promise for mercury monitoring in industrial applications.

UV lifetime demonstrator for space-based applications

NASA Astrophysics Data System (ADS)

Albert, Michael; Puffenburger, Kent; Schum, Tom; Fitzpatrick, Fran; Litvinovitch, Slava; Jones, Darrell; Rudd, Joseph; Hovis, Floyd

2016-05-01

A long-lived UV laser is an enabling technology for a number of high-priority, space-based lidar instruments. These include next generation cloud and aerosol lidars that incorporates a UV channel, direct detection 3-D wind lidars, and ozone DIAL (differential absorption lidar) systems. In previous SBIR funded work we developed techniques for increasing the survivability of components in high power UV lasers and demonstrated improved operational lifetimes. In this Phase III ESTO funded effort we are designing and building a TRL (Technology Readiness Level) 6 demonstrator that will have increased output power and a space-qualifiable package that is mechanically robust and thermally-stable. For full space compatibility, thermal control will be through pure conductive cooling. Contamination control processes and optical coatings will be chosen that are compatible with lifetimes in excess of 1 billion shots. The 1064nm output will be frequency tripled to provide greater than 100 mJ pulses of 355 nm light at 150 Hz. The laser module build was completed in the third quarter of 2015 at which time a series of life tests were initiated. The first phase of the lifetime testing is a 532 nm only test that is expected to complete in April 2016. The 532 nm lifetest will be followed by a 4 month half power UV life test and then a four month full power UV life test. The lifetime tests will be followed by thermal/vacuum (TVAC) and vibration testing to demonstrate that the laser optics module design is at TRL 6.

Measurements of amplified spontaneous emission in π-conjugated polymer films with different morphology

NASA Astrophysics Data System (ADS)

Wang, Yuchen; Yang, Xiao; Wang, Ruizhi; Sheng, Chuanxiang

2014-09-01

π-conjugated polymers (PCPs) are attractive candidates as gain media in laser applications due to their high photoluminescence quantum efficiency in broad spectral range. However, the self-absorption of long-lived excited states was considered to be a limitation for achieving more effective organic lasers. Moreover, the morphology of films is found to be crucial to their optical and electrical properties recently. In this work, we studied amplified spontaneous emission (ASE) of a typical PCP, namely, Poly [2-methoxy-5-(2-ethylhexyloxy)-1, 4-phenylenevinylene] (MEH-PPV) films with a 10 ns 532 nm pulse laser focused by a cylindrical lens for obtaining an excitation area in the form of a 100 μm wide and 1 cm long stripe. In an as cast MEH-PPV film, the thresholds increase with the temperatures increase due to the thermal torsion and vibration mode shorten the conjugation chain. On the other hand, a MEH-PPV film which is annealed in Nitrogen at 350 K of half hour, the ASE is not observed at both 300 K and 77 K, for annealing will form π- stacks which increase the interchain interaction. Further analysis suggests that interchain excimers instead of intrachain excitons may be more primary to optical properties in annealed MEH-PPV film. Our measurements suggest that the morphology of the film instead of long lived photoexcitation with lifetime sensitive to the temperature is more crucial to threshold of ASE, as well as, to PCPs lasers.

Fabrication of Ta nanoparticles induced by nanosecond laser ablation in ethanol: the study of laser fluence effects

NASA Astrophysics Data System (ADS)

Azadi Kenari, Fariba; Moniri, Samira; Hantehzadeh, Mohammad Reza; Dorranian, Davoud; Ghoranneviss, Mahmood

2018-05-01

Tantalum nanoparticles (Ta NPs) were synthesized in ethanol solution by ablation with a 1064 nm Nd:YAG laser. Prepared NPs were investigated by UV-visible absorption spectroscopy, Transmission electron microscopy, X-ray diffraction and Photoluminescence measurement. The average sizes of NPs were calculated to be in the range of 12-18 nm. From the UV-visible studies, the plasmon peak position of Ta NPs was observed in the spectral range of 206-208 nm. The XRD spectra clearly showed the crystalline structure of NPs and various peaks of Ta and Ta2O5. Moreover, the UV region in the PL spectrum included the free exciton and the bound exciton emission correlated with the defect concentration. In fact, the laser ablation in the organic and inorganic solvents is a strong technique to obtain some NPs with particular structures, which are impossible to produce by conventional methods.

UV laser-ablated surface textures as potential regulator of cellular response.

PubMed

Chandra, Prafulla; Lai, Karen; Sung, Hak-Joon; Murthy, N Sanjeeva; Kohn, Joachim

2010-06-01

Textured surfaces obtained by UV laser ablation of poly(ethylene terephthalate) films were used to study the effect of shape and spacing of surface features on cellular response. Two distinct patterns, cones and ripples with spacing from 2 to 25 μm, were produced. Surface features with different shapes and spacings were produced by varying pulse repetition rate, laser fluence, and exposure time. The effects of the surface texture parameters, i.e., shape and spacing, on cell attachment, proliferation, and morphology of neonatal human dermal fibroblasts and mouse fibroblasts were studied. Cell attachment was the highest in the regions with cones at ∼4 μm spacing. As feature spacing increased, cell spreading decreased, and the fibroblasts became more circular, indicating a stress-mediated cell shrinkage. This study shows that UV laser ablation is a useful alternative to lithographic techniques to produce surface patterns for controlling cell attachment and growth on biomaterial surfaces.

Electron Microscopic and Spectroscopic Characterization for Soot Source Differentiation by Laser Derivatization

NASA Astrophysics Data System (ADS)

Gaddam, Chethan K.

Combustion produced soot is highly variable with nanostructure and chemistry dependent upon combustion conditions and fuel. Previous studies have shown soot nanostructure to be dependent upon the source via quantification of high-resolution transmission electron microscopy (HRTEM) images for nanostructural parameters. In principle this permits identification of the soot source and its contribution to any particular receptor site. Yet many structural aspects are subtle, and the chemistry of lamellae is unaddressed for reasons of poorly resolved or differentiated nanostructure and insufficient sample quantity for traditional analytical methods. This characterization gap then leads to the formative question prompting this study: how best to bring out small differences in nanostructure and other seemingly subtle differences in chemistry? A process of pulsed laser annealing is proposed to highlight compositional and structural differences thereby distinctively and uniquely identifying the source of the soot. The operative premise being that small variations in nanostructure and unresolved differences in chemistry exist and are specific to the particular combustion process. The overall goal is then to develop the laser-based heating as an analytical tool by identifying the process conditions and operational parameters for optimal derivatization. Specific objectives directed towards achieving this goal include: 1) Identifying optimal laser operational parameters for derivatization. 2) Defining the dependence upon nanostructure and molecular composition using model soots while also identifying variability and range of outcomes. 3) Demonstrating differentiation upon combustion derived soots from real engines, e.g. diesel, gasoline, gas-turbines, combustors, etc. 4) Applying image processing algorithms to the laser heated soots to quantify and differentiate the transformed carbon nanostructures. For laser derivatization, a sample-housing chamber was custom built using a commercial optical grade quartz tube. Depending on the sample quantity, two different sample support systems were designed. Soot was laser-heated while in an inert (Ar) atmosphere using a pulsed Nd:YAG laser operating at 1064 nm. A laser beam dimension of ca 9 mm in diameter ensured that the entire sample area received uniform irradiation. To identify the optimal laser fluence, pulsed laser heating was applied at three different laser fluences to three carbon samples. Laser heating at these short timescales produced partially graphitized structures comprised of extended graphitic layers (>1 nm), and voids as material is rearranged. While laser heating the material with additional pulses did further graphitize the material, multiple pulses were not particularly beneficial for laser derivatization as this repetitive exposure decreased the degree of differentiation between the test samples. Based on visual HRTEM observations and quantified fringe analysis, a single pulse laser fluence of 250 mJ/cm2 (˜2800 K, determined from multiwavelength pyrommetry) produced the best derivatization without causing fragmentation or material ablation. For demonstrating the uniqueness of the laser-derivatized (nano)structure as dependent upon source and combustion conditions, the laser derivatization technique was validated by comparing different synthetic carbons, selected soots from transportation and residential combustion sources, and laboratory flames, each with recognizable nanostructure. After laser heating, the direction of nanostructure evolution of the synthetic carbons (possessing C:H > 10:1) appeared to be governed by their initial nanostructure as shown by HRTEM images. As illustration of chemistry's role, though nascent R250 carbon black showed structural similarity across multiple particles, laser heating led to either hollow shells or particles with internal structures. These differences were attributed to the chemistry of construction, i.e., the sp2/sp 3 bonding as quantified by electron energy loss spectroscopy (EELS), showing significant differences between particles as large as 60%. The nanostructure of soots from different transportation sources (such as diesel, jet and gasoline engines) evolved distinctively upon laser annealing. Laser derivatization of soot collected from same platform (engine-type) revealed that fuel commonality leads to similar nanostructure for the same class of combustion source, whereas, fuel dependence and ensuing chemistry differences were prominently illustrated by comparison of laser-annealed soots originating from ultra-low sulfur diesel (ULSD) and an oxygenated fuel blend. The origin for this dependence was identified by X-ray photoelectron spectroscopy (XPS), revealing a significantly lower sp2/sp3 carbon bonding for the oxygenated fuels compared to their pure hydrocarbon fuels. As another example, laser annealing of residential boiler soot produced highly intertwined lamellae; this was attributed to inherent chemistry differences relative to the biodiesel (B100) soot that similarly lacked recognizable nanostructure. These observations suggest that the initial soot nanostructure in conjunction with the chemistry of construction governs the material transformation under pulsed laser annealing. (Abstract shortened by ProQuest.).

Tuning the properties of tin oxide thin films for device fabrications

NASA Astrophysics Data System (ADS)

Sudha, A.; Sharma, S. L.; Gupta, A. N.; Sharma, S. D.

2017-11-01

Tin oxide thin films were deposited on well cleaned glass substrates by thermal evaporation in vacuum and were annealed at 500 ∘C in the open atmosphere inside a furnace for 90 min for promoting the sensitivity of the films. The X-ray diffraction studies revealed that the as-deposited films were amorphous in nature and the annealed films showed appreciable crystalline behavior. The annealed thin films were then irradiated using 60Co gamma source. The radiation induced changes were then studied by X-ray diffraction, scanning electron microscopy, UV-vis spectroscopy and I- V characterization. The remarkable increase in the average grain size, the decrement in the energy band gap and resistivity due to the gamma irradiations up to a certain dose and the reversal of these properties at higher doses are the important observations. The large changes in the conductivity and energy band gap of the annealed thin films due to gamma irradiation make these films quite important device material for the fabrication of gamma sensors and dosimeters.

Optical properties and surface topography of CdCl2 activated CdTe thin films

NASA Astrophysics Data System (ADS)

Patel, S. L.; Purohit, A.; Chander, S.; Dhaka, M. S.

2018-05-01

The effect of post-CdCl2 heat treatment on optical properties and surface topography of evaporated CdTe thin films is investigated. The pristine and thermally annealed films were subjected to UV-Vis spectrophotometer and atomic force microscopy (AFM) to investigate the optical properties and surface topography, respectively. The absorbance is found to be maximum (˜90%) at 320°C temperature and transmittance found to be minimum and almost constant in ultraviolet and visible regions. The direct band gap is increased from 1.42 eV to 2.12 eV with post-CdCl2 annealing temperature. The surface topography revealed that the uniformity is improved with annealing temperature and average surface roughness is found in the range of 83.3-144.3 nm as well as grains have cylindrical hill-like shapes. The investigated results indicate that the post-CdCl2 treated films annealed at 320°C may be well-suitable for thin film solar cells as an absorber layer.

Growth and study of first order metal insulator transition in VO2 films

NASA Astrophysics Data System (ADS)

Rathore, Ajay K.; Kumar, Satish; Kumar, Dhirendra; Sathe, V. G.

2015-06-01

VO2 films have been grown on Si substrate using pulse laser deposition technique. The as-deposited film prepared by V2O3 target is found to possess signatures of V2O5 phase. Up on annealing at 780°C the film transforms to VO2 phase. The annealed film is found to be highly oriented along (011) and single phase in nature. The high temperature Raman spectroscopic measurements on the annealed film showed first order transition from monoclinic insulating phase to conductive tetragonal rutile phase around 65°C.

Bandwidth-narrowed Bragg gratings inscribed in double-cladding fiber by femtosecond laser.

PubMed

Shi, Jiawei; Li, Yuhua; Liu, Shuhui; Wang, Haiyan; Liu, Ningliang; Lu, Peixiang

2011-01-31

Bragg gratings with the bandwidth(FWHM) narrowed up to 79 pm were inscribed in double-cladding fiber with femtosecond radiation and a phase mask followed by an annealing treatment. With the annealing temperature below a critical value, the bandwidth of Bragg gratings induced by Type I-IR and Type II-IR index change was narrowed without the reduction of reflectivity. The bandwidth narrowing is due to the profile transformation of the refractive index modulation caused by the annealing treatment. This mechanism was verified by comparing bandwidth narrowing processes of FBGs written with different power densities.

Homogenization optics to improve detectability of a fluorescence response to a single laser pulse: Detection of feces on apples

USDA-ARS?s Scientific Manuscript database

Fecal contamination of produce is a known food safety risk. Measuring fluorescence responses to UV excitation is an established method for detecting such contamination. One measurement system utilizes a pulsed UV laser to induce a fluorescence response from fecal material and a gated intensified cam...

Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

NASA Astrophysics Data System (ADS)

Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

2013-03-01

In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

Correlation between reflectance and photoluminescent properties of al-rich ZnO nano-structures

NASA Astrophysics Data System (ADS)

Khan, Firoz; Baek, Seong-Ho; Ahmad, Nafis; Lee, Gun Hee; Seo, Tae Hoon; Suh, Eun-kyung; Kim, Jae Hyun

2015-05-01

Al rich zinc oxide nano-structured films were synthesized using spin coating sol-gel technique. The films were annealed in oxygen ambient in the temperature range of 200-700 °C. The structural, optical, and photoluminescence (PL) properties of the films were studied at various annealing temperatures using X-ray diffraction spectroscopy, field emission scanning electron microscopy, photoluminescence emission spectra measurement, and Raman and UV-Vis spectroscopy. The optical band gap was found to decrease with the increase of the annealing temperature following the Gauss Amp function due to the confinement of the exciton. The PL peak intensity in the near band region (INBE) was found to increase with the increase of the annealing temperature up to 600 °C, then to decrease fast to a lower value for the annealing temperature of 700 °C due to crystalline quality. The Raman peak of E2 (low) was red shifted from 118 cm-1 to 126 cm-1 with the increase of the annealing temperature. The intensity of the second order phonon (TA+LO) at 674 cm-1 was found to decrease with the increase of the annealing temperature. The normalized values of the reflectance and the PL intensity in the NBE region were highest for the annealing temperature of 600 °C. A special correlation was found between the reflectance at λ = 1000 nm and the normalized PL intensity in the green region due to scattering due to presence of grains.

Structural, morphological and optical properties of LiCo0.5Ni0.45Ag0.05O2 thin films

NASA Astrophysics Data System (ADS)

Haider, Adawiya J.; AL-Rsool, Rusul Abed; AL-Tabbakh, Ahmed A.; Al-Gebori, Abdul Nasser M.; Mohamed, Aliaa

2018-05-01

Pulsed Laser Deposition (PLD) method has been successfully used for the synthesized of nano-crystalline cathode m aterial LiCo0.5Ni0.45Ag0.05O2 (LCNAO) thin film. LCNAO Ferromagnetic using pulsed Nd-YAG laser with wavelength (λ = 532 nm) and duration (10 ns) and energy fluence (1.4 J/cm2) with different substrate temperature (100, 200, 300) ˚C and O2 pressure at 10 mbar. The structural, morphological and optical properties of the films were determined by X-ray Diffraction (XRD), Scan Electron Microscopy (SEM), Atomic Force microscope (AFM) and UV-VIS spectroscopy respectively. It is observed that partial layer to spinel transformation takes place during post annealing and the average particle size of the LiCo0.5Ni0.45Ag0.05O2 is found to be (1-12) nm from SEM measurement. Finally the optical properties of the thin films have been studied at different Substrate temperature. It found the energy gap decreases from 4.2 to 3.8 eV when the substrate's temperature increasing from 100° C into 300 °C of the LCNAO films. These mean that the optical quality of LCNAO films is improved due to the increase in crystalline size and reduction of defect sites.

Excimer Laser Curing Of Polymer Coatings

NASA Astrophysics Data System (ADS)

Klick, David; Akerman, M. Alfred; Paul, George L.; Supurovic, Darko; Tsuda, Haruki

1988-12-01

The use of the excimer laser as a source of energy for photo-assisted curing of industrial polymeric coatings was investigated. Presently, UV lamps are sometimes used to excite a photoinitiating molecule mixed with the starting monomers and oligomers of a coating. The resulting polymeric chain reaction multiplies the effect of the initial photons, making economical use of the light source. The high cost of laser photons may thus be justifiable if lasers provide advantages over lamps. A series of visibly transparent 7 μm coatings (a typical thickness for 'slick' magazine coatings) with various photoinitiators, monomers, and oligomers was illuminated with excimer laser light of various wavelengths, fluences, and pulse repetition rates. For the optimum parameters, it was found that the laser had large advantages in curing speed over existing UV lamp processes, due to its monochromaticity. Pigmented coatings (20 μm TiO2 mixtures typical of appliance or automotive finishes) are not easily cured with UV lamps due to the inability of light to penetrate the absorbing and scattering pigmented layer. However, economically-viable cure rates were achieved with certain photoinitiators using a tunable excimer-pumped dye laser. A prototype of such a laser suitable for factory use was built and used to cure these coatings. Results are scaled to a factory situation, and costs are calculated to show the advantages of the laser method over currently used processes.

H and Au diffusion in high mobility a-InGaZnO thin-film transistors via low temperature KrF excimer laser annealing

NASA Astrophysics Data System (ADS)

Bermundo, Juan Paolo S.; Ishikawa, Yasuaki; Fujii, Mami N.; Ikenoue, Hiroshi; Uraoka, Yukiharu

2017-03-01

We report the fabrication of high mobility amorphous InGaZnO (a-IGZO) thin-film transistors (TFTs) irradiated by a single shot of a 248 nm KrF excimer laser. Very high mobilities (μ) of up to 43.5 cm2/V s were obtained after the low temperature excimer laser annealing (ELA) process. ELA induces high temperatures primarily in the upper layers and maintains very low temperatures of less than 50 °C in the substrate region. Scanning Transmission Electron micrographs show no laser induced damage and clear interfaces after the laser irradiation. In addition, several characterization studies were performed to determine the μ improvement mechanism. The analysis of Secondary Ion Mass Spectrometry and X-ray Photoelectron Spectroscopy suggests incorporation of H mainly from the hybrid passivation layer into the channel. Moreover, Energy-dispersive X-ray Spectroscopy results show that Au diffused into the channel after ELA. Both KrF ELA-induced H and Au diffusion contributed to the higher μ. These results demonstrate that ELA can greatly enhance the electrical properties of a-IGZO TFTs for promising applications in large area, transparent, and flexible electronics.

DETECTION OF DNA DAMAGE USING MELTING ANALYSIS TECHNIQUES

EPA Science Inventory

A rapid and simple fluorescence screening assay for UV radiation-, chemical-, and enzyme-induced DNA damage is reported. This assay is based on a melting/annealing analysis technique and has been used with both calf thymus DNA and plasmid DNA (puc 19 plasmid from E. coli). DN...

Pulsed UV laser light on Escherichia coli and Saccharomyces cerevisiae suspended in non-alcoholic beer

PubMed Central

Hosseini, SM; Azar-Daryany, MK; Massudi, R; Elikaei, A

2011-01-01

Background The aim of this study was to investigate the effect of pulsed ultra-violet (UV) irradiation on inactivation of beer spoilage microorganisms. UV irradiation is nowadays cost effective enough to compete with traditional biological, physical, and chemical treatment technologies and has become an alternative to such methods. Material and Methods Photoinactivation effects of pulsed UV laser with the wavelengths of 355 and 266 nm, which inactivate typical prokaryotic (Escherichia coli) and eukaryotic (Saccharomyces cerevisiae) microorganisms, were examined with different doses and exposure times. Results A dose of 100 J/cm2 of the 355 nm pulsed UV laser was able to reduce about 1 to 2 log (88.75%) of E.coli with the population of 1.6×108 colony-forming units (CFU/ml), and 97% of 3.2×107, 3×106, 5.5×105, and 9×104 CFU/ml. In the case of 266 nm, more than 99% reduction in E. coli serial dilutions was inactivated, using 10 J/cm2 with exception of 7×104 CFU/ml which was not detected any bacterial growth using 5 J/cm2. In addition, 50, 40, and 20 J/cm2 energy were used successfully to inactivate S. cerevisiae at the populations of 5.4×106, 7×105, 5×104 and 4×103 CFU/ml, respectively. As a result, pulsed UV Laser with 266 nm was strong enough to inactivate a high titer of bacterial and yeast indicator standards suspended in non-alcoholic beer in comparison with 355nm doses. Conclusion Results indicate that pulsed UV technology, in principle, is an attractive alternative to conventional methods for the inactivation of indicator microorganisms and has potential in irradiation of unpasteurized beer. PMID:22347580

International Symposium on Advanced Laser Technologies Held in Prague, Czech Republic on November 8-13, 1993

DTIC Science & Technology

1993-11-13

nucleation and solidification scenarios in thin films, depending on the energy density of the annealing laser. 1. INTRODUCTION The interaction of...after the laser pulse. The liquid phase appears bright here, due to its higher reflectivity. In order to obtain this picture, part of the incident Nd:YAG...agreement between our calculation (solid line in Fig.4) and experiment as long as the energy density of the laser pulse is below 1.2 F/cm2 . At higher

Annealing Effects on the Formation of Copper Oxide Thin Films

NASA Astrophysics Data System (ADS)

Marzuki, Marina; Zamzuri Mohamad Zain, Mohd; Zarul Hisham, Nurazhra; Zainon, Nooraizedfiza; Harun, Azmi; Nani Ahmad, Rozie

2018-03-01

This study approached the simple method of developing CuO thin films by thermal oxidation on pure Cu sheets. The effects of annealing temperature on the formation of CuO layers have been investigated. The oxide layers have been fabricated by annealing of Cu sheets for 5 hours at different temperatures of 980 ~ 1010 °C. The morphologies and optical properties of annealed Cu sheets were studied by using SEM and UV-Vis spectrophotometer respectively. It is revealed that the annealing temperature influence the grain growth and the grain size increases as the temperature increase. The highest grain size was observed on sample annealed at 1000 °C with average area per grain size of 0.023 mm2. Theoretically, larger grain size provides less barriers for electron mobility and increase the efficiency of solar devices. The optical absorption spectra of the oxide films was also measured. Interference pattern was noted at wavelength about 900 nm corresponding to the formation of CuO film. The interference noise observed could be due to the coarse surface and the presence of powdery oxide deposits that causes the scattering loses from the surface. CuO film obtained by this method may be further studied and exploited as low cost photovoltaic device.

The Evolution of Fabricated Gold Thin Films to Nano-Micro Particles Under Thermal Annealing Process

NASA Astrophysics Data System (ADS)

Hajivaliei, Mahdi; Nazari, Saeed

2016-06-01

Gold (Au) thin films with thickness of 35nm were prepared by electron beam deposition onto flat glass substrates under high vacuum (5.3×10-3Pa) condition and they were annealed in the range of 573-873 K for 1 and 2h in atmospheric pressure. The influence of the annealing temperature on the evolution of Au thin film to nano-micro particles was studied. Moreover, the basic properties of the films, namely morphological, structural and optical were investigated. The X-ray diffraction (XRD) analysis revealed that the Au thin films were cubic structure phase with lattice parameter around a=4.0786Å. The most preferential orientation is along (111) planes for all Au films. The lattice parameter and grain size in the films were calculated by X-ray patterns and correlated with annealing temperatures. The obtained results of ultraviolet-visible spectrometry (UV-Vis) indicate that with increasing annealing temperature, the surface plasmon resonance peak of gold nanocrystallite will disappear which implies the size of particles are grown. Field-emission scanning electron microscopy (FE-SEM) results show that the prepared gold thin films have been converted to nano-micro gold particles in different annealing temperatures. These results lead to controlling the size of produced nanocrystallite.

International Symposium on Special Topics in Chemical Propulsion (3rd): Non-Intrusive Combustion Diagnostics Held in Scheveningen, Netherlands on 10-14 May 93

DTIC Science & Technology

1993-05-14

Saima, and H. Watanabe 67 11:00 Vacuum- UV cw-Resonance Fluorescence Studies on Laser Photodissoclation of Hydrazine Fuels, G. L. Vaghjani 78 11:30...Transfer In Disc-Stabiluzed ames, P. Ferrdo and M. V. Heitor 116 3:30 Coffee Break 3:50 UV Raman Measurements of Temperature and Concentrations with 308...in remote or hostile environments, including flight instrumentation. LOSA results to be presented include uv ring dye laser measurements of OH (306 nm

Detecting Kerogen as a Biosignature Using Colocated UV Time-Gated Raman and Fluorescence Spectroscopy.

PubMed

Shkolyar, Svetlana; Eshelman, Evan J; Farmer, Jack D; Hamilton, David; Daly, Michael G; Youngbull, Cody

2018-04-01

The Mars 2020 mission will analyze samples in situ and identify any that could have preserved biosignatures in ancient habitable environments for later return to Earth. Highest priority targeted samples include aqueously formed sedimentary lithologies. On Earth, such lithologies can contain fossil biosignatures as aromatic carbon (kerogen). In this study, we analyzed nonextracted kerogen in a diverse suite of natural, complex samples using colocated UV excitation (266 nm) time-gated (UV-TG) Raman and laser-induced fluorescence spectroscopies. We interrogated kerogen and its host matrix in samples to (1) explore the capabilities of UV-TG Raman and fluorescence spectroscopies for detecting kerogen in high-priority targets in the search for possible biosignatures on Mars; (2) assess the effectiveness of time gating and UV laser wavelength in reducing fluorescence in Raman spectra; and (3) identify sample-specific issues that could challenge rover-based identifications of kerogen using UV-TG Raman spectroscopy. We found that ungated UV Raman spectroscopy is suited to identify diagnostic kerogen Raman bands without interfering fluorescence and that UV fluorescence spectroscopy is suited to identify kerogen. These results highlight the value of combining colocated Raman and fluorescence spectroscopies, similar to those obtainable by SHERLOC on Mars 2020, to strengthen the confidence of kerogen detection as a potential biosignature in complex natural samples. Key Words: Raman spectroscopy-Laser-induced fluorescence spectroscopy-Mars Sample Return-Mars 2020 mission-Kerogen-Biosignatures. Astrobiology 18, 431-453.

Universal liquid-phase laser fabrication of various nano-metals encapsulated by ultrathin carbon shells for deep-UV plasmonics.

PubMed

Yu, Miao; Yang, Chao; Li, Xiao-Ming; Lei, Tian-Yu; Sun, Hao-Xuan; Dai, Li-Ping; Gu, Yu; Ning, Xue; Zhou, Ting; Wang, Chao; Zeng, Hai-Bo; Xiong, Jie

2017-06-29

The exploration of localized surface plasmon resonance (LSPR) beyond the usual visible waveband, for example within the ultraviolet (UV) or deep-ultraviolet (D-UV) regions, is of great significance due to its unique applications in secret communications and optics. However, it is still challenging to universally synthesize the corresponding metal nanostructures due to their high activity. Herein, we report a universal, eco-friendly, facile and rapid synthesis of various nano-metals encapsulated by ultrathin carbon shells, significantly with a remarkable deep-UV LSPR characteristic, via a liquid-phase laser fabrication method. Firstly, a new generation of the laser ablation in liquid (LAL) method has been developed with an emphasis on the elaborate selection of solvents to generate ultrathin carbon shells, and hence to stabilize the formed metal nanocrystals. As a result, a series of metal@carbon nanoparticles (NPs), including Cr@C, Ti@C, Fe@C, V@C, Al@C, Sn@C, Mn@C and Pd@C, can be fabricated by this modified LAL method. Interestingly, these NPs exhibit LSPR peaks in the range of 200-330 nm, which are very rare for localized surface plasmon resonance. Consequently, the UV plasmonic effects of these metal@carbon NPs were demonstrated both by the observed enhancement in UV photoluminescence (PL) from the carbon nanoshells and by the improvement of the photo-responsivity of UV GaN photodetectors. This work could provide a universal method for carbon shelled metal NPs and expand plasmonics into the D-UV waveband.

Distribution and avoidance of debris on epoxy resin during UV ns-laser scanning processes

NASA Astrophysics Data System (ADS)

Veltrup, Markus; Lukasczyk, Thomas; Ihde, Jörg; Mayer, Bernd

2018-05-01

In this paper the distribution of debris generated by a nanosecond UV laser (248 nm) on epoxy resin and the prevention of the corresponding re-deposition effects by parameter selection for a ns-laser scanning process were investigated. In order to understand the mechanisms behind the debris generation, in-situ particle measurements were performed during laser treatment. These measurements enabled the determination of the ablation threshold of the epoxy resin as well as the particle density and size distribution in relation to the applied laser parameters. The experiments showed that it is possible to reduce debris on the surface with an adapted selection of pulse overlap with respect to laser fluence. A theoretical model for the parameter selection was developed and tested. Based on this model, the correct choice of laser parameters with reduced laser fluence resulted in a surface without any re-deposited micro-particles.

Spectral characteristics of quantum-cascade laser operating at 10.6 μm wavelength for a seed application in laser-produced-plasma extreme UV source.

PubMed

Nowak, Krzysztof M; Ohta, Takeshi; Suganuma, Takashi; Yokotsuka, Toshio; Fujimoto, Junichi; Mizoguchi, Hakaru; Endo, Akira

2012-11-15

In this Letter, we investigate, for the first time to our knowledge, the spectral properties of a quantum-cascade laser (QCL) from a point of view of a new application as a laser seeder for a nanosecond-pulse high-repetition frequency CO(2) laser operating at 10.6 μm wavelength. The motivation for this work is a renewed interest in such a pulse format and wavelength driven by a development of extreme UV (EUV) laser-produced-plasma (LPP) sources. These sources use pulsed multikilowatt CO(2) lasers to drive the EUV-emitting plasmas. Basic spectral performance characteristics of a custom-made QCL chip are measured, such as tuning range and chirp rate. The QCL is shown to have all essential qualities of a robust seed source for a high-repetition nanosecond-pulsed CO(2) laser required by EUV LPP sources.

Simple Ultraviolet Short-Pulse Intensity Diagnostic Method Using Atmosphere

NASA Astrophysics Data System (ADS)

Aota, Tatsuya; Takahashi, Eiichi; Losev, Leonid L.; Tabuchi, Takeyuki; Kato, Susumu; Matsumoto, Yuji; Okuda, Isao; Owadano, Yoshiro

2005-05-01

An ultraviolet (UV) short-pulse intensity diagnostic method using atmosphere as a nonlinear medium was developed. This diagnostic method is based on evaluating the ion charge of the two-photon ionization of atmospheric oxygen upon irradiation with a UV (238-299 nm) short-pulse laser. The observed ion signal increased proportionally to the input intensity to the power of ˜2.2, during the two-photon ionization of atmospheric oxygen. An autocorrelator was constructed and used to successfully measure a UV laser pulse of ˜400 fs duration. Since this diagnostic system is used in the open-air under windowless conditions, it can be set along the beam path and used as a UV intensity monitor.

Ultraviolet laser effects on the cornea

NASA Astrophysics Data System (ADS)

Zuclich, Joseph A.

1990-07-01

Ultraviolet radiation in the ambient environment or from artificial sources may pose both acute and chronic hazards to the skin and the ocular tissues. In general terrestrial conditions have evolved such that there are only narrow safety margins between ambient UV levels and exposure levels harmful to the human. Obvious examples of acute consequences ofUV overexposure are sunburn and snowblindness as well as analogous conditions induced by artificial sources such as the welder''s arc mercury vapor lamps and UV-emitting lasers. Further chronic UV exposure is strongly implicated as a causative agent in certain types of cataract and skin cancer. This presentation will summarize a number of specific cases where UV radiation affected the primate cornea. Data presented will include the action spectra for far- and near-UV induced ocular damage the pulsewidth and total energy dependencies of ocular thresholds studies of cumulative effects of repeated UV exposures and quantitative determinations of tissue repair or recovery rates. Depending on the exposure parameters utilized photochemical thermal or photoablative damage mechanisms may prevail. 1.

Different susceptibility of cells of porcine skin and internal organs to ultraviolet A-induced breaking of nuclear DNA.

PubMed

Brozyna, Anna; Chwirot, Barbara W

2005-01-01

There is a continuously growing interest in medical applications of ultraviolet radiation (UV-A and long-wavelength UV-B) especially for laser surgery, phototherapy and photodiagnostics of human internal organs. UV-B and UV-A radiation is potentially mutagenic, however, there has been very little information published to date concerning the significance of possible deleterious action of such photons on cells of internal tissues. The aim of this study is to compare the sensitivities of skin cells to those of internal organs upon exposure to UV-A. To assess this sensitivity we have determined the UV-A dose-dependent frequency of nuclear DNA breaks detected with the terminal deoxynucleotidyl transferase-mediated deoxyuridine triphosphate-biotin nick end-labeling (TUNEL) technique. The materials for the study were macroscopic samples of porcine skin, colon and esophagus. The UV-A dose ranged from 0.1 to 1000 mJ/cm2, which is similar to doses received by cells in regions examined with laser-induced fluorescence or by cells surrounding areas subject to a laser ablation. To reduce the influence of DNA repair processes the tissue samples were kept at a low temperature during the irradiation and were deep frozen immediately after completing the irradiation procedure. The cells of the internal organs are much more susceptible to UV-A-induced breaking of DNA than the skin cells. The percentage fractions and the spatial distributions of the damaged cells and the characteristics of the UV-A dose dependence seem to vary by type of internal organ.

Influence of the irradiation temperature on the dosimetric and high temperature TL peaks of Al2O3:C.

PubMed

Molnar, G; Benabdesselam, M; Borossay, J; Iacconi, P; Lapraz, D; Akselrod, M

2002-01-01

The TL glow curves of Al2O3:C crystals have been investigated as a function of the irradiation temperature. The nature of the observed TL peaks has been studied by optical annealing. The filling of traps was found strongly dependent on the irradiation temperature in the case of UV exposure, which has been explained by the temperature dependence of the photoionisation of F centres. This latter phenomenon could have a part in the luminescence quenching and UV bleaching of F centres.

Velocity measurement in rocket exhaust and general aerodynamic flows by photolysis of H2O and laser induced fluorescence of OH

NASA Technical Reports Server (NTRS)

Boedeker, Laurence R.

1992-01-01

A 'tagging' approach in which the photolysis of H2O by an excimer laser creates a zone of enhanced OH concentration, while a second, pulsed-UV laser detects tagged-zone convection via time-delayed excitation of OH fluorescence, depends on the photodissociation process and the kinetics of OH decay (relative to velocity). For application to the fuel-rich, high supersonic Mach number exhaust flow of the SSME, the detection of OH is being accomplished with either a pulsed narrowband UV dye laser or a tunable XeCl excimer laser for excitation of an OH 0-0 band transition, while the two-photon photolysis of H2O is conducted by focusing an injection-locked KrF excimer laser into the flow.

Electronic sideband locking of a broadly tunable 318.6 nm ultraviolet laser to an ultra-stable optical cavity

NASA Astrophysics Data System (ADS)

Bai, Jiandong; Wang, Jieying; He, Jun; Wang, Junmin

2017-04-01

We demonstrate frequency stabilization of a tunable 318.6 nm ultraviolet (UV) laser system using electronic sideband locking. By indirectly changing the frequency of a broadband electro-optic phase modulator, the laser can be continuously tuned over 4 GHz, while a 637.2 nm laser is directly stabilized to a high-finesse ultra-stable optical cavity. The doubling cavity also remains locked to the 637.2 nm light. We show that the tuning range depends mainly on the gain-flattening region of the modulator and the piezo-tunable range of the seed laser. The frequency-stabilized tunable UV laser system is able to compensate for the offset between reference and target frequencies, and has potential applications in precision spectroscopy of cold atoms.

Enhancement of the design of a pulsed UV laser system for a laser-desorption mass spectrometer on Mars

NASA Astrophysics Data System (ADS)

Kolleck, C.; Büttner, A.; Ernst, M.; Hunnekuhl, M.; Hülsenbusch, T.; Moalem, A.; Priehs, M.; Kracht, D.; Neumann, J.

2017-11-01

A laser-desorption mass spectrometer will be part of the ESA-led ExoMars mission with the objective of identifying organic molecules on planet Mars. A UV laser source emitting nanosecond pulses with pulse energy of about 250 μJ at a wavelength of 266 nm is required for the ionization of nonvolatile soil constituents. A passively q-switched, diode-pumped Nd∶YAG laser oscillator with external frequency quadrupling has been developed. The basic optical concept and a previously developed flight-near prototype are redesigned for the engineering qualification model of the laser, mainly due to requirements updated during the development process and necessary system adaptations. Performance issues like pulse energy stability, pulse energy adjustment, and burst mode operation are presented in this paper.

Fermi Level Control of Point Defects During Growth of Mg-Doped GaN

NASA Astrophysics Data System (ADS)

Bryan, Zachary; Hoffmann, Marc; Tweedie, James; Kirste, Ronny; Callsen, Gordon; Bryan, Isaac; Rice, Anthony; Bobea, Milena; Mita, Seiji; Xie, Jinqiao; Sitar, Zlatko; Collazo, Ramón

2013-05-01

In this study, Fermi level control of point defects during metalorganic chemical vapor deposition (MOCVD) of Mg-doped GaN has been demonstrated by above-bandgap illumination. Resistivity and photoluminescence (PL) measurements are used to investigate the Mg dopant activation of samples with Mg concentration of 2 × 1019 cm-3 grown with and without exposure to ultraviolet (UV) illumination. Samples grown under UV illumination have five orders of magnitude lower resistivity values compared with typical unannealed GaN:Mg samples. The PL spectra of samples grown with UV exposure are similar to the spectra of those grown without UV exposure that were subsequently annealed, indicating a different incorporation of compensating defects during growth. Based on PL and resistivity measurements we show that Fermi level control of point defects during growth of III-nitrides is feasible.

Electrical and Structural Analysis on the Formation of n-type Junction in Germanium

NASA Astrophysics Data System (ADS)

Aziz, Umar Abdul; Nadhirah Mohamad Rashid, Nur; Rahmah Aid, Siti; Centeno, Anthony; Ikenoue, Hiroshi; Xie, Fang

2017-05-01

Germanium (Ge) has re-emerged as a potential candidate to replace silicon (Si) as a substrate, due to its higher carrier mobility properties that are the key point for the realization of devices high drive current. However, the fabrication process of Ge is confronted with many problems such as low dopant electrical activation and the utilization of heavy n-type dopant atoms during ion implantation. These problems result in more damage and defects that can affect dopant activation. This paper reports the electrical and structural analysis on the formation of n-type junction in Ge substrate by ion implantation, followed by excimer laser annealing (ELA) using KrF laser. ELA parameters such as laser fluences were varied from 100 - 2000 mJ/cm2 and shot number between 1 - 1000 to obtain the optimized parameter of ELA with a high degree of damage and defect removal. Low resistance with a high degree of crystallinity is obtained for the samples annealed with less than five shot number. Higher shot number with high laser fluence, shows a high degree of ablation damage.

Rotary target method to prepare thin films of CdS/SiO 2 by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Wang, H.; Zhu, Y.; Ong, P. P.

2000-12-01

Thin films of CdS-doped SiO 2 glass were prepared by using the conventional pulsed laser deposition (PLD) technique. The laser target consisted of a specially constructed rotary wheel which provided easy control of the exposure-area ratio to expose alternately the two materials to the laser beam. The physical target assembly avoided the potential complications inherent in chemically mixed targets such as in the sol-gel method. Time-of-flight (TOF) spectra confirmed the existence of the SiO 2 and CdS components in the thin-film samples so produced. X-ray diffraction (XRD) and atomic force microscopy(AFM) results showed the different sizes and structures of the as-deposited and annealed films. The wurtzite phase of CdS was found in the 600 oC-annealed sample, while the as-deposited film showed a cubic-hexagonal mixed structure. In the corresponding PL (photoluminescence) spectra, a red shift of the CdS band edge emission was found, which may be a result of the interaction between the CdS nanocrystallite and SiO 2 at their interface.

Fabrication, characterization and annealing of polymer-fullerene bulk heterojunction organic solar cells

NASA Astrophysics Data System (ADS)

Sharma, Trupti; Singhal, R.; Vishnoi, R.; Biswas, S. K.

2017-05-01

The structural and optical properties of bulk heterojunction (BHJ) organic solar cell devices have been studied before and after heat treatment. The BHJ structure is fabricated by making the blend of Poly [3-hexylthiophene] (P3HT) and Phenyl C61 butyric acid methyl ester (PCBM) for active layer. After the heat treatment at 140 °C temperature, the device is characterized by X-ray diffraction (XRD) measurement, Raman spectroscopy and UV-visible absorption spectroscopy. The reduced intensity of XRD peak corresponding to (100) plane and decreased crystallite size was observed after annealing. The Raman peak intensity corresponding to C=C stretching mode and optical absorption peak intensity is also found to be reduced after the heat treatment to the device. The diminished intensitiesafter annealing may be due to diffusion of Al into active layer.

Influence of annealing to the defect of inkjet-printed ZnO thin film

NASA Astrophysics Data System (ADS)

Tran, Van-Thai; Wei, Yuefan; Zhan, Zhaoyao; Du, Hejun

2018-03-01

The advantages of additive manufacturing for electronic devices have led to the demand of printing functional material in search of a replacement for the conventional subtractive fabrication process. Zinc oxide (ZnO), thanks to its interesting properties for the electronic and photonic applications, has gathered many attentions in the effort to fabricate functional devices additively. Although many potential methods have been proposed, most of them focus on the lowtemperature processing of the printed material to be compatible with the polymer substrate. These low-temperature fabrication processes could establish a high concentration of defects in printed ZnO which significantly affect the performance of the device. In this study, ZnO thin film for UV photodetector application was prepared by inkjet printing of zinc acetate dihydrate solution following by different heat treatment schemes. The effects of annealing to the intrinsic defect of printed ZnO and photoresponse characteristics under UV illumination were investigated. A longer response/decay time and higher photocurrent were observed after the annealing at 350°C for 30 minutes. X-ray photoelectron spectroscopy (XPS) analysis suggests that the reducing of defect concentration, such as oxygen vacancy, and excess oxygen species in printed ZnO is the main mechanism for the variation in photoresponse. The result provides a better understanding on the defect of inkjet-printed ZnO and could be applied in engineering the properties of the printed oxide-based semiconductor.

Effect of the temperature on structural and optical properties of zinc oxide nanoparticles.

PubMed

Hadia, N M A; García-Granda, Santiago; García, José R

2014-07-01

Zinc nitrate hexahydrate, Zn(NO3)2 x 6H2O was used as a precursor with urea NH2CONH2 to prepare hydrozincite Zn5(CO3)2(OH)6 powder using hydrothermal method for 8 h at 90 degrees C. Zinc oxide (ZnO) nanoparticles (NPs) were prepared by thermal annealing of hydrozincite powder at different annealing temperatures, i.e., 350, 550 750 and 950 degrees C in air for 2 h. The resulting materials were characterized by X-ray diffraction, scanning electron microscopy (SEM) and thermal gravimetric analysis (TGA). The optical properties of the products were characterized by Fourier transform infrared spectroscopy (FT-IR), UV-Vis spectroscopy and photoluminescence (PL) spectra. It was found that the particle size increased from - 33 to 250 nm with increasing in the annealing temperatures. FTIR results showed that the standard peaks of zinc oxide were presented at 428.17 and 532.32 cm(-1). Thermal analysis study showed that the primary weight loss starts at - 93 degrees C is due to solvent evaporation. The secondary weight loss, observed at - 378 degrees C, is due to phase transition from hydrated zinc oxide to zinc oxide. The band gaps of the products were in the range - 3.26-3.30 eV. The PL spectrum showed that the as-synthesized ZnO nanoparticles had UV (381 nm) and green (537 nm) emissions.

Optical and Structural Characterization of ZnO/TiO2 Bilayer Thin Films Grown by Sol-Gel Spin Coating

NASA Astrophysics Data System (ADS)

Gareso, P. L.; Musfitasari; Juarlin, Eko

2018-03-01

Structural and optical properties of ZnO/TiO2 bilayers thin films have been investigated using x-ray diffraction (X-RD), scanning electron microscopy (SEM), and optical transmittance UV-Vis measurements. ZnO thin films were prepared by dissolving zinc acetate dehydrated into a solvent of ethanol and then added triethanolamin. In the case of TiO2 layers, tetraisoproxide was dissolved into ethanol and then added an acetate acid. The layer of ZnO was deposited first followed by TiO2 layer on a glass substrate using a spin coating technique. The ZnO/TiO2 bilayers were annealed at various temperatures from 300°C until 600°C for 60 minutes. The X-ray diffraction results show that there was an enhancement of the x-ray spectra as annealed temperature increased to 600°C in comparison to the samples that were annealed at 300°C. Based on the optical measurement of UV-Vis, the band gap energy of ZnO/TiO2 bilayer is around 3.2 eV at temperature of 300°C. This value is similar to the band gap energy of ZnO. SEM results show that there is no cluster in the surface of ZnO/TiO2 bilayer.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abudureyimu, Reheman; Huang, Chunning; Liu, Yun

We report on a first experimental demonstration of locking a doubly-resonant Fabry-Perot cavity to burst-mode picosecond ultraviolet (UV) pulses by using a temperature controlled dispersion compensation method. This technique will eventually enable the intra cavity power enhancement of burst-mode 402.5MHz/50ps UV laser pulses with a MW level peak power required for the laser assisted H- beam stripping experiment at the Spallation Neutron Source.

UV lifetime laser demonstrator for space-based applications

NASA Astrophysics Data System (ADS)

Albert, Michael; Puffenburger, Kent; Schum, Tom; Fitzpatrick, Fran; Litvinovitch, Slava; Jones, Darrell; Rudd, Joseph; Hovis, Floyd

2015-09-01

A long-lived UV laser is an enabling technology for a number of high-priority, space-based lidar instruments. These include next generation cloud and aerosol lidars that incorporates a UV channel, direct detection 3-D wind lidars, and ozone DIAL (differential absorption lidar) system. In previous SBIR funded work we developed techniques for increasing the survivability of components in high power UV lasers and demonstrated improved operational lifetimes. In this Phase III ESTO funded effort we are designing and building a TRL (Technology Readiness Level) 6 demonstrator that will have increased output power and a space-qualifiable package that is mechanically robust and thermally-stable. For full space compatibility, thermal control will be through pure conductive cooling. Contamination control processes and optical coatings will be chosen that are compatible with lifetimes in excess of 1 billion shots. The 1064nm output will be frequency tripled to provide greater than 100mJ pulses of 355nm light at 150 Hz. After completing the laser module build in the third quarter of 2015 we will initiate lifetime testing, followed by thermal/vacuum (TVAC) and vibration testing to demonstrate that the design is at TRL 6.

Effect of nanosecond UV laser irradiation on luminescence and absorption in silver- and copper-containing phosphate glasses

NASA Astrophysics Data System (ADS)

Murashov, A. A.; Sidorov, A. I.; Stoliarchuk, M. V.

2018-03-01

Experimental evidence is presented that nanosecond UV laser irradiation of silver- and copper-containing barium phosphate glasses leads to luminescence quenching in the visible range. Subsequent heat treatment induces an absorption in the range 350–500 nm. These effects are due to the ionisation and fragmentation of subnanometre molecular clusters by laser radiation and subsequent (heat treatment-induced) formation of nanoparticles possessing plasmon resonance. Our numerical modelling results demonstrate the feasibility of producing stable AgnCum hybrid molecular clusters in glass. Local modification of the optical properties of glass by laser light can be used for optical information recording.

Correlation fluorescence method of amine detection

NASA Astrophysics Data System (ADS)

Myslitsky, Valentin F.; Tkachuk, Svetlana S.; Rudeichuk, Volodimir M.; Strinadko, Miroslav T.; Slyotov, Mikhail M.; Strinadko, Marina M.

1997-12-01

The amines fluorescence spectra stimulated by UV laser radiation are investigated in this paper. The fluorescence is stimulated by the coherent laser beam with the wavelength 0.337 micrometers . At the sufficient energy of laser stimulation the narrow peaks of the fluorescence spectra are detected besides the wide maximum. The relationship between the fluorescence intensity and the concentration of amines solutions are investigated. The fluorescence intensity temporal dependence on wavelength 0.363 micrometers of the norepinephrine solution preliminarily radiated by UV laser with wavelength 0.337 micrometers was found. The computer stimulated and experimental investigations of adrenaline and norepinephrine mixtures fluorescence spectra were done. The correlation fluorescent method of amines detection is proposed.

Plasmonic properties of Ag nanoparticles embedded in GeO2-SiO2 matrix by atom beam sputtering.

PubMed

Mohapatra, Satyabrata

2016-02-07

Nanocomposite thin films containing Ag nanoparticles embedded in the GeO2-SiO2 matrix were synthesized by the atom beam co-sputtering technique. The structural, optical and plasmonic properties and the chemical composition of the nanocomposite thin films were studied by transmission electron microscopy (TEM) with energy dispersive X-ray spectroscopy (EDX), UV-visible absorption spectroscopy and X-ray photoelectron spectroscopy (XPS). UV-visible absorption studies on Ag-SiO2 nanocomposites revealed the presence of a strong localized surface plasmon resonance (LSPR) peak characteristic of Ag nanoparticles at 413 nm, which showed a blue shift of 26 nm (413 to 387 nm) along with a significant broadening and drastic decrease in intensity with the incorporation of 16 at% of Ge into the SiO2 matrix. TEM studies on Ag-GeO2-SiO2 nanocomposite thin films confirmed the presence of Ag nanoparticles with an average size of 3.8 nm in addition to their aggregates with an average size of 16.2 nm. Thermal annealing in air resulted in strong enhancement in the intensity of the LSPR peak, which showed a regular red shift of 51 nm (from 387 to 438 nm) with the increase in annealing temperature up to 500 °C. XPS studies showed that annealing in air resulted in oxidation of excess Ge atoms in the nanocomposite into GeO2. Our work demonstrates the possibility of controllably tuning the LSPR of Ag nanoparticles embedded in the GeO2-SiO2 matrix by single-step thermal annealing, which is interesting for optical applications.

Templated assembly of Co-Pt nanoparticles via thermal and laser-induced dewetting of bilayer metal films.

PubMed

Oh, Yong-Jun; Kim, Jung-Hwan; Thompson, Carl V; Ross, Caroline A

2013-01-07

Templated dewetting of a Co/Pt metal bilayer film on a topographic substrate was used to assemble arrays of Co-Pt alloy nanoparticles, with highly uniform particle size, shape and notably composition compared to nanoparticles formed on an untemplated substrate. Solid-state and liquid-state dewetting processes, using furnace annealing and laser irradiation respectively, were compared. Liquid state dewetting produced more uniform, conformal nanoparticles but they had a polycrystalline disordered fcc structure and relatively low magnetic coercivity. In contrast, solid state dewetting enabled formation of magnetically hard, ordered L1(0) Co-Pt single-crystal particles with coercivity >12 kOe. Furnace annealing converted the nanoparticles formed by liquid state dewetting into the L1(0) phase.

Solid State Division progress report, September 30, 1981

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

1982-04-01

Progress made during the 19 months from March 1, 1980, through September 30, 1981, is reported in the following areas: theoretical solid state physics (surfaces, electronic and magnetic properties, particle-solid interactions, and laser annealing); surface and near-surface properties of solids (plasma materials interactions, ion-solid interactions, pulsed laser annealing, and semiconductor physics and photovoltaic conversion); defects in solids (radiation effects, fracture, and defects and impurities in insulating crystals); transport properties of solids (fast-ion conductors, superconductivity, and physical properties of insulating materials); neutron scattering (small-angle scattering, lattice dynamics, and magnetic properties); crystal growth and characterization (nuclear waste forms, ferroelectric mateirals, high-temperature materials,more » and special materials); and isotope research materials. Publications and papers are listed. (WHK)« less

Angular filter refractometry analysis using simulated annealing.

PubMed

Angland, P; Haberberger, D; Ivancic, S T; Froula, D H

2017-10-01

Angular filter refractometry (AFR) is a novel technique used to characterize the density profiles of laser-produced, long-scale-length plasmas [Haberberger et al., Phys. Plasmas 21, 056304 (2014)]. A new method of analysis for AFR images was developed using an annealing algorithm to iteratively converge upon a solution. A synthetic AFR image is constructed by a user-defined density profile described by eight parameters, and the algorithm systematically alters the parameters until the comparison is optimized. The optimization and statistical uncertainty calculation is based on the minimization of the χ 2 test statistic. The algorithm was successfully applied to experimental data of plasma expanding from a flat, laser-irradiated target, resulting in an average uncertainty in the density profile of 5%-20% in the region of interest.

Solution-Based Synthesis of Crystalline Silicon from Liquid Silane through Laser and Chemical Annealing

DOE PAGES

Iyer, Ganjigunte R. S.; Hobbie, Erik K.; Guruvenket, Srinivasan; ...

2012-05-23

We report a solution process for the synthesis of crystalline silicon from the liquid silane precursor cyclohexasilane (Si 6H 12). Polysilane films were crystallized through thermal and laser annealing, with plasma hydrogenation at atmospheric pressure generating further structural changes in the films. The evolution from amorphous to microcrystalline is characterized using scanning electron microscopy (SEM), atomic force microscopy (AFM), Raman spectroscopy and impedance spectroscopy. A four-decade enhancement in the electrical conductivity is attributed to a disorder-order transition in a bonded Si network. Lastly, our results demonstrate a potentially attractive approach that employs a solution process coupled with ambient post-processing tomore » produce crystalline silicon thin films.« less

Synthesis and characterization of PVK/AgNPs nanocomposites prepared by laser ablation.

PubMed

Abd El-Kader, F H; Hakeem, N A; Elashmawi, I S; Menazea, A A

2015-03-05

Nanocomposites of Poly (n-vinylcarbazole) PVK/Ag nanoparticles were prepared by laser ablation of a silver plate in aqueous solution of chlorobenzene. The influences of laser parameters such as; time of irradiation, source power and wavelength (photon energy) on structural, morphological and optical properties have been investigated using X-ray diffraction (XRD), Transmission electron microscopy (TEM), Ultraviolet-visible (UV-Vis) and Photoluminescence (PL). A correlation between the investigated properties has been discussed. XRD, TEM and PL indicated that the complexation between AgNPs and PVK in the composite system is possible. Only the reflection peak at 2θ=38° of AgNPs appeared in the composite nanoparticles while the other reflection peaks were destroyed. The nanoparticles shape and size distribution were evaluated from TEM images. TEM analysis revealed a lower average particle size at long laser irradiation time 40min and short laser wavelength 532nm together with high laser power 570mW. From UV-Visible spectra the values of absorption coefficient, absorption edge and energy tail were calculated. The reduction of band tail value with increasing the laser ablation parameters confirms the decrease of the disorder in such composite system. The PL and UV-Vis. spectra confirm that nanocomposite samples showed quantum confinement effect. Copyright © 2014 Elsevier B.V. All rights reserved.

A FLUORESCENCE BASED ASSAY FOR DNA DAMAGE INDUCED BY RADIATION, CHEMICAL MUTAGENS AND ENZYMES

EPA Science Inventory

A simple and rapid assay to detect DNA damage is reported. This novel assay is based on changes in melting/annealing behavior and facilitated using certain dyes that increase their fluorescence upon association with double stranded (ds)DNA. Damage caused by ultraviolet (UV) ra...

Zn2+ blocks annealing of complementary single-stranded DNA in a sequence-selective manner

USDA-ARS?s Scientific Manuscript database

A simple low-temperature EDTA-free agarose gel electrophoresis procedure (LTEAGE) coupled with UV-Vis spectrum and fluorescence quenching analyses was developed and the Zn2+-single-stranded (ss) DNA interaction was investigated under near-physiological conditions. It was found that Zn2+ blocked the...

Effect of annealing process on the heterostructure CuO/Cu2O as a highly efficient photocathode for photoelectrochemical water reduction

NASA Astrophysics Data System (ADS)

Du, Fan; Chen, Qing-Yun; Wang, Yun-Hai

2017-05-01

CuO/Cu2O photocathodes were successfully prepared via simply annealing the electrodeposited Cu2O on fluoride doped tin oxide (FTO) substrate. They were characterized by X-ray diffraction, scanning electron microscopy (SEM), transmission electron microscope (TEM), UV-vis absorption spectra and X-ray photoelectron spectroscopy (XPS). The results showed that the heterojunction of CuO/Cu2O was formed during the annealing process and presented the nature of p-type semiconductor. The photocurrent density and photoelectrochemical (PEC) stability of the p-type heterostructure CuO/Cu2O photocathode was improved greatly compared with the pure Cu2O, which was greatly affected by annealing time and temperature. The highest photo current density of -0.451 mA/cm2 and highest stability was obtained via annealing at 650 °C for 15 min (at -0.3 V vs. Ag/AgCl), which gave a remarkable improvement than the as-deposited Cu2O (-0.08 mA/cm2). This suggested that the CuO/Cu2O heterojunction facilitated the electron-hole pair separation and improved the photocathode's current and stability.

Improvements of high-power diode laser line generators open up new application fields

NASA Astrophysics Data System (ADS)

Meinschien, J.; Bayer, A.; Bruns, P.; Aschke, L.; Lissotschenko, V. N.

2009-02-01

Beam shaping improvements of line generators based on high power diode lasers lead to new application fields as hardening, annealing or cutting of various materials. Of special interest is the laser treatment of silicon. An overview of the wide variety of applications is presented with special emphasis of the relevance of unique laser beam parameters like power density and beam uniformity. Complementary to vision application and plastic processing, these new application markets become more and more important and can now be addressed by high power diode laser line generators. Herewith, a family of high power diode laser line generators is presented that covers this wide spectrum of application fields with very different requirements, including new applications as cutting of silicon or glass, as well as the beam shaping concepts behind it. A laser that generates a 5m long and 4mm wide homogeneous laser line is shown with peak intensities of 0.2W/cm2 for inspection of railway catenaries as well as a laser that generates a homogeneous intensity distribution of 60mm x 2mm size with peak intensities of 225W/cm2 for plastic processing. For the annealing of silicon surfaces, a laser was designed that generates an extraordinary uniform intensity distribution with residual inhomogeneities (contrast ratio) of less than 3% over a line length of 11mm and peak intensities of up to 75kW/cm2. Ultimately, a laser line is shown with a peak intensity of 250kW/cm2 used for cutting applications. Results of various application tests performed with the above mentioned lasers are discussed, particularly the surface treatment of silicon and the cutting of glass.

Tungsten Hydride Phosphorus- and Arsenic-Bearing Molecules with Double and Triple W-P and W-As Bonds.

PubMed

Andrews, Lester; Cho, Han-Gook; Fang, Zongtang; Vasiliu, Monica; Dixon, David A

2018-05-07

Laser ablation of tungsten metal provides W atoms which react with phosphine and arsine during condensation in excess argon and neon, leading to major new infrared (IR) absorptions. Annealing, UV irradiation, and deuterium substitution experiments coupled with electronic structure calculations at the density functional theory level led to the assignment of the observed IR absorptions to the E≡WH 3 and HE═WH 2 molecules for E = P and As. The potential energy surfaces for hydrogen transfer from PH 3 to the W were calculated at the coupled-cluster CCSD(T)/complete basis set level. Additional weak bands in the phosphide and arsenide W-H stretching region are assigned to the molecules with loss of H from W, E≡WH 2 . The electronic structure calculations show that the E≡WH 3 molecules have a W-E triple bond, the HE═WH 2 molecules have a W-E double bond, and the H 2 E-WH molecules have a W-E single bond. The formation of multiple E-W bonds leads to increasing stability for the isomers.

From Laser Desorption to Laser Ablation of Biopolymers

NASA Astrophysics Data System (ADS)

Franz, Hillenkamp

1998-03-01

For selected indications laser ablation and cutting of biological tissues is clinical practice. Preferentially lasers with emission wavelengths in the far UV and the mid IR are used, for which tissue absorption is very high. Morphologically the ablation sites look surprisingly similar for the two wavelength ranges, despite of the very different prim y putative interaction mechanisms. Ablation depth as a function of fluence follows a sigmoidal curve. Even factors below the nominal ablation threshold superficial layers of material get removed from the surface. This is the fluence range for Matrix-Assisted Laser Desorption/Ionization (MALDI). Evidence will be presented which suggest that strong similarities exist between the desorption and ablation processes both for UV- as well as for IR-wavelengths.

UV-Visible Absorption Spectroscopy Enhanced X-ray Crystallography at Synchrotron and X-ray Free Electron Laser Sources.

PubMed

Cohen, Aina E; Doukov, Tzanko; Soltis, Michael S

2016-01-01

This review describes the use of single crystal UV-Visible Absorption micro-Spectrophotometry (UV-Vis AS) to enhance the design and execution of X-ray crystallography experiments for structural investigations of reaction intermediates of redox active and photosensitive proteins. Considerations for UV-Vis AS measurements at the synchrotron and associated instrumentation are described. UV-Vis AS is useful to verify the intermediate state of an enzyme and to monitor the progression of reactions within crystals. Radiation induced redox changes within protein crystals may be monitored to devise effective diffraction data collection strategies. An overview of the specific effects of radiation damage on macromolecular crystals is presented along with data collection strategies that minimize these effects by combining data from multiple crystals used at the synchrotron and with the X-ray free electron laser.

Rapid annealing of iron implanted Hg(1-x)Cd(x)Te

NASA Astrophysics Data System (ADS)

Kalish, Rafael

1990-03-01

Different Rapid Thermal Annealing techniques were employed to achieve damage removal and electrical activation of dopants in ion implanted Hg(1-x)Cd(x)Te (x = 0.2, 0.3). As seen by Rutherford Backscattering Spectrometry combined with channeling and Auger measurements annealings with a CO2 laser or a flash lamp lead to good removal of implantation damage without causing changes in the stoichiometry. These techniques, however, suffer from complexity and lack of reproducibility. The new simple method for RTA of mercury containing crystals Annealing by immersion in a how MErcury BAth (AMEBA) which was developed within the present project was found to be comparable to other more complicate techniques as for improving the electrical properties of HgCdTe as deduced from Hall and differential Hall measurements.

Laser capture microdissection: should an ultraviolet or infrared laser be used?

PubMed

Vandewoestyne, Mado; Goossens, Karen; Burvenich, Christian; Van Soom, Ann; Peelman, Luc; Deforce, Dieter

2013-08-15

Laser capture microdissection (LCM) is a well-established cell separation technique. It combines microscopy with laser beam technology and allows targeting of specific cells or tissue regions that need to be separated from others. Consequently, this biological material can be used for genome or transcriptome analyses. Appropriate methods of sample preparation, however, are crucial for the success of downstream molecular analysis. The aim of this study was to objectively compare the two main LCM systems, one based on an ultraviolet (UV) laser and the other based on an infrared (IR) laser, on different criteria ranging from user-friendliness to sample quality. The comparison was performed on two types of samples: peripheral blood mononuclear cells and blastocysts. The UV laser LCM system had several advantages over the IR laser LCM system. Not only does the UV system allow faster and more precise sample collection, but also the obtained samples-even single cell samples-can be used for DNA extraction and downstream polymerase chain reaction (PCR) applications. RNA-based applications are more challenging for both LCM systems. Although sufficient RNA can be extracted from as few as 10 cells for reverse transcription quantitative PCR (RT-qPCR) analysis, the low RNA quality should be taken into account when designing the RT-qPCR assays. Copyright © 2013 The Authors. Published by Elsevier Inc. All rights reserved.

Photonic structures in diamond based on femtosecond UV laser induced periodic surface structuring (LIPSS).

PubMed

Granados, Eduardo; Martinez-Calderon, Miguel; Gomez, Mikel; Rodriguez, Ainara; Olaizola, Santiago M

2017-06-26

We study the fabrication of photonic surface structures in single crystal diamond by means of highly controllable direct femtosecond UV laser induced periodic surface structuring. By appropriately selecting the excitation wavelength, intensity, number of impinging pulses and their polarization state, we demonstrate emerging high quality and fidelity diamond grating structures with surface roughness below 1.4 nm. We characterize their optical properties and study their potential for the fabrication of photonic structure anti-reflection coatings for diamond Raman lasers in the near-IR.

Compact Ozone Lidar for Atmospheric Ozone and Aerosol Measurements

NASA Technical Reports Server (NTRS)

Marcia, Joel; DeYoung, Russell J.

2007-01-01

A small compact ozone differential absorption lidar capable of being deployed on a small aircraft or unpiloted atmospheric vehicle (UAV) has been tested. The Ce:LiCAF tunable UV laser is pumped by a quadrupled Nd:YLF laser. Test results on the laser transmitter demonstrated 1.4 W in the IR and 240 mW in the green at 1000 Hz. The receiver consists of three photon-counting channels, which are a far field PMT, a near field UV PMT, and a green PMT. Each channel was tested for their saturation characteristics.

Biological response of laser macrostructured and oxidized titanium alloy: an in vitro and in vivo study.

PubMed

Paz, María Dolores; Álava, J Iñaki; Goikoetxea, Leire; Chiussi, Stefano; Díaz-Güemes, Idoia; Usón, Jesus; Sánchez, Francisco; León, Betty

2011-01-01

To assess both the in vitro and in vivo biological response of a laser modified surface in an integrated manner. A combined innovative approach applies lasers to macrostructure as well as to oxidize the surface of titanium alloy implants. A Nd:YAG marking and ArF excimer lasers were used for macrostructuring and UV-oxidizing the surface of Ti6Al4V discs, respectively. Human fetal osteoblastic cell culture and a sheep tibia model were used to assess the cell response and the osseogeneration capability of as-machined, laser macrostructured and laser macrostructured and oxidized surfaces. In vitro: Laser macrostructuration alone did not promote cell response. Cellular proliferation was enhanced by the additional UV laser oxidation. In vivo: A greater significant percentage of bone-implant contact was obtained for both laser treated surfaces compared to machine-turned control samples, three months after implantation, in spite of the low cellular response for macrostructured samples. The use of sheep model for six months appears to be less adequate for a comparison because of the high level of bone integration in all samples. In spite of the often reported positive effect of titanium oxidation on the triggering of faster osseointegration, in this experiment the additional UV laser oxidation did not lead to a significant in vivo improvement. Laser macrostructuration of titanium alloy surfaces appears to promote bone apposition and may therefore constitute a promising surface modification strategy. In animal models, the natural process of titanium surface oxidation, because of physiologic fluids, alters properties observed in vitro with cells.

[The commonest therapeutic methods for laser irradiation of blood].

PubMed

Moskvin, S V; Konchugova, T V; Khadartsev, A А

2017-12-05

One of the most widely employed methods of laser therapy is laser irradiation of blood (LIB). There are two modifications of this technique, one being intravenous low-intensity laser irradiation of blood (ILIB), the other non-invasive blood irradiation(NLIB). The two methods have been developing independently since either has its advantages and disadvantages. The present article was designed to review the main currently available techniques for laser irradiation of blood which are presented in the form of tables (charts). Replacing the UV irradiation of blood with UV lamps by laser ultraviolet irradiation of blood (LUVIB®) has made it possible to significantly simplify the technique and enhanced its efficiency. The most effective options for ILIB are the combined techniques: ILIB-635 + LUVIB® and ILIB-525 + LUVIB. The most effective technique for ELIB is believed to be the use of low-intensity pulsed laser light with a wavelength of 635 nm and output power up to 40 W.

Characterisation of a complex thin walled structure fabricated by selective laser melting using a ferritic oxide dispersion strengthened steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boegelein, Thomas, E-mail: t.boegelein@liv.ac.uk; Louvis, Eleftherios; Dawson, Karl

2016-02-15

Oxide dispersion strengthened (ODS) alloys exhibit superior mechanical and physical properties due to the presence of nanoscopic Y(Al, Ti) oxide precipitates, but their manufacturing process is complex. The present study is aimed at further investigation of the application of an alternative, Additive Manufacturing (AM) technique, Selective Laser Melting (SLM), to the production of consolidated ODS alloy components. Mechanically alloyed PM2000 (ODS-FeCrAl) powders have been consolidated and a fine dispersion of Y-containing precipitates were observed in an as built thin-walled component, but these particles were typically poly-crystalline and contained a variety of elements including O, Al, Ti, Cr and Fe. Applicationmore » of post-build heat treatments resulted in the modification of particle structures and compositions; in the annealed condition most precipitates were transformed to single crystal yttrium aluminium oxides. During the annealing treatment, precipitate distributions homogenised and localised variations in number density were diminished. The resulting volume fractions of those precipitates were 25–40% lower than have been reported in conventionally processed PM2000, which was attributed to Y-rich slag-like surface features and inclusions formed during SLM. - Highlights: • A wall structure was grown from ODS steel powder using selective laser melting. • A fine dispersion of nano-precipitates was apparent in as-build material. • Precipitates were multi-phased containing several elements, e.g. O, Ti, Al, Fe, Cr, Y. • Post-build annealing changed those into typically single-crystalline Y–Al–O. • The anneal also reduced and stabilised the volume fraction of precipitates to ~ 0.006.« less

Determination of UV-visible-NIR absorption coefficient of graphite bulk using direct and indirect methods

NASA Astrophysics Data System (ADS)

Smausz, T.; Kondász, B.; Gera, T.; Ajtai, T.; Utry, N.; Pintér, M.; Kiss-Albert, G.; Budai, J.; Bozóki, Z.; Szabó, G.; Hopp, B.

2017-10-01

Absorption coefficient of graphite bulk pressed from 1 to 5 μm-sized crystalline grains was measured in UV-Vis-NIR range with three different methods: (i) determination of pulsed laser ablation rate as the function of laser fluence for different wavelengths (248, 337, 532, and 1064 nm, respectively); (ii) production of aerosol particles by UV laser ablation of the bulk graphite in inert atmosphere and determination of the mass-specific absorption coefficient with a four-wavelength (266, 355, 532, and 1064 nm, respectively) photoacoustic spectrometer, and (iii) spectroscopic ellipsometry in 250-1000 nm range. Taking into account the wide range of the absorption coefficients of different carbon structures, an overall relatively good agreement was observed for the three methods. The ellipsometric results fit well with the ablation rate measurement, and the data obtained with photoacoustic method are also similar in the UV and NIR region; however, the values were somewhat higher in visible and near-UV range. Taking into account the limitations of the methods, they can be promising candidates for the determination of absorption coefficient when the samples are strongly scattering and there is no possibility to perform transmissivity measurements.

Sacrificial-layer free transfer of mammalian cells using near infrared femtosecond laser pulses

PubMed Central

Zhang, Jun; Hartmann, Bastian; Siegel, Julian; Marchi, Gabriele; Clausen-Schaumann, Hauke; Sudhop, Stefanie; Huber, Heinz P.

2018-01-01

Laser-induced cell transfer has been developed in recent years for the flexible and gentle printing of cells. Because of the high transfer rates and the superior cell survival rates, this technique has great potential for tissue engineering applications. However, the fact that material from an inorganic sacrificial layer, which is required for laser energy absorption, is usually transferred to the printed target structure, constitutes a major drawback of laser based cell printing. Therefore alternative approaches using deep UV laser sources and protein based acceptor films for energy absorption, have been introduced. Nevertheless, deep UV radiation can introduce DNA double strand breaks, thereby imposing the risk of carcinogenesis. Here we present a method for the laser-induced transfer of hydrogels and mammalian cells, which neither requires any sacrificial material for energy absorption, nor the use of UV lasers. Instead, we focus a near infrared femtosecond (fs) laser pulse (λ = 1030 nm, 450 fs) directly underneath a thin cell layer, suspended on top of a hydrogel reservoir, to induce a rapidly expanding cavitation bubble in the gel, which generates a jet of material, transferring cells and hydrogel from the gel/cell reservoir to an acceptor stage. By controlling laser pulse energy, well-defined cell-laden droplets can be transferred with high spatial resolution. The transferred human (SCP1) and murine (B16F1) cells show high survival rates, and good cell viability. Time laps microscopy reveals unaffected cell behavior including normal cell proliferation. PMID:29718923

High energy, high average power solid state green or UV laser

DOEpatents

Hackel, Lloyd A.; Norton, Mary; Dane, C. Brent

2004-03-02

A system for producing a green or UV output beam for illuminating a large area with relatively high beam fluence. A Nd:glass laser produces a near-infrared output by means of an oscillator that generates a high quality but low power output and then multi-pass through and amplification in a zig-zag slab amplifier and wavefront correction in a phase conjugator at the midway point of the multi-pass amplification. The green or UV output is generated by means of conversion crystals that follow final propagation through the zig-zag slab amplifier.

Nonlinear Optical Phenomena in Solids

DTIC Science & Technology

1981-02-01

December 1980, organized according to research objectives: a. Objective: Grow five crystals of Hg].Cdx.Te by the modified Bridgman (quench/anneal) method...objectives of the contract are listed below: a. Grow five 2rystals of Hgl _ ,Cd T e by the modified Bridgman (quench/anneal) method. b. Determine the...composicinn and purity profiles of the crystals . c. Prepare spin-flip Raman laser cavities from selected sections of the crystals . d. Evaluate the utility of

UV laser deposition of metal films by photogenerated free radicals

NASA Technical Reports Server (NTRS)

Montgomery, R. K.; Mantei, T. D.

1986-01-01

A novel photochemical method for liquid-phase deposition of metal films is described. In the liquid phase deposition scheme, a metal containing compound and a metal-metal bonded carbonyl complex are dissolved together in a polar solvent and the mixture is irradiated using a UV laser. The optical arrangement consists of a HeCd laser which provides 7 mW of power at a wavelength of 325 nm in the TEM(OO) mode. The beam is attenuated and may be expanded to a diameter of 5-20 mm. Experiments with photochemical deposition of silver films onto glass and quartz substrates are described in detail. Mass spectrometric analysis of deposited silver films indicated a deposition rate of about 1 A/s at incident power levels of 0.01 W/sq cm. UV laser-induced copper and palladium films have also been obtained. A black and white photograph showing the silver Van Der Pauw pattern of a solution-deposited film is provided.

Single-photon cesium Rydberg excitation spectroscopy using 318.6-nm UV laser and room-temperature vapor cell.

PubMed

Wang, Jieying; Bai, Jiandong; He, Jun; Wang, Junmin

2017-09-18

We demonstrate a single-photon Rydberg excitation spectroscopy of cesium (Cs) atoms in a room-temperature vapor cell. Cs atoms are excited directly from 6S 1/2 ground state to nP 3/2 (n = 70 - 100) Rydberg states with a 318.6 nm ultraviolet (UV) laser, and Rydberg excitation spectra are obtained by transmission enhancement of a probe beam resonant to Cs 6S 1/2 , F = 4 - 6P 3/2 , F' = 5 transition as partial population on F = 4 ground state are transferred to Rydberg state. Analysis reveals that the observed spectra are velocity-selective spectroscopy of Rydberg state, from which the amplitude and linewidth influenced by lasers' Rabi frequency have been investigated. Fitting to energies of Cs nP 3/2 (n = 70 -100) states, the determined quantum defect is 3.56671(42). The demodulated spectra can also be employed as frequency references to stabilize the UV laser frequency to specific Cs Rydberg transition.

A review of laser electrode processing for development and manufacturing of lithium-ion batteries

NASA Astrophysics Data System (ADS)

Pfleging, Wilhelm

2018-02-01

Laser processes for cutting, annealing, structuring, and printing of battery materials have a great potential in order to minimize the fabrication costs and to increase the electrochemical performance and operational lifetime of lithium-ion cells. Hereby, a broad range of applications can be covered such as micro-batteries, mobile applications, electric vehicles, and stand-alone electric energy storage devices. Cost-efficient nanosecond (ns)-laser cutting of electrodes was one of the first laser technologies which were successfully transferred to industrial high-energy battery production. A defined thermal impact can be useful in electrode manufacturing which was demonstrated by laser annealing of thin-film electrodes for adjusting of battery active crystalline phases or by laser-based drying of composite thick-film electrodes for high-energy batteries. Ultrafast or ns-laser direct structuring or printing of electrode materials is a rather new technical approach in order to realize three-dimensional (3D) electrode architectures. Three-dimensional electrode configurations lead to a better electrochemical performance in comparison to conventional 2D one, due to an increased active surface area, reduced mechanical tensions during electrochemical cycling, and an overall reduced cell impedance. Furthermore, it was shown that for thick-film composite electrodes an increase of electrolyte wetting could be achieved by introducing 3D micro-/nano-structures. Laser structuring can turn electrodes into superwicking. This has a positive impact regarding an increased battery lifetime and a reliable battery production. Finally, laser processes can be up-scaled in order to transfer the 3D battery concept to high-energy and high-power lithium-ion cells.

Role of annealing temperatures on structure polymorphism, linear and nonlinear optical properties of nanostructure lead dioxide thin films

NASA Astrophysics Data System (ADS)

Zeyada, H. M.; Makhlouf, M. M.

2016-04-01

The powder of as synthesized lead dioxide (PbO2) has polycrystalline structure β-PbO2 phase of tetragonal crystal system. It becomes nanocrystallites α-PbO2 phase with orthorhombic crystal system upon thermal deposition to form thin films. Annealing temperatures increase nanocrystallites size from 28 to 46 nm. The optical properties of α-PbO2 phase were calculated from absolute values of transmittance and reflectance at nearly normal incidence of light by spectrophotometer measurements. The refractive and extinction indices were determined and showed a response to annealing temperatures. The absorption coefficient of α-PbO2 films is >106 cm-1 in UV region of spectra. Analysis of the absorption coefficient spectra near optical edge showed indirect allowed transition. Annealing temperature decreases the value of indirect energy gap for α-PbO2 films. The dispersion parameters such as single oscillator energy, dispersion energy, dielectric constant at high frequency and lattice dielectric constant were calculated and its variations with annealing temperatures are reported. The nonlinear refractive index (n2), third-order nonlinear susceptibility (χ(3)) and nonlinear absorption coefficient (βc) were determined. It was found that χ(3), n2 and β increase with increasing photon energy and decrease with increasing annealing temperature. The pristine film of α-PbO2 has higher values of nonlinear optical constants than for annealed films; therefore it is suitable for applications in manufacturing nonlinear optical devices.

Laser applications in advanced chip packaging

NASA Astrophysics Data System (ADS)

Müller, Dirk; Held, Andrew; Pätzel, Rainer; Clark, Dave; van Nunen, Joris

2016-03-01

While applications such as drilling μ-vias and laser direct imaging have been well established in the electronics industry, the mobile device industry's push for miniaturization is generating new demands for packaging technologies that allow for further reduction in feature size while reducing manufacturing cost. CO lasers have recently become available and their shorter wavelength allows for a smaller focus and drilling hole diameters down to 25μm whilst keeping the cost similar to CO2 lasers. Similarly, nanosecond UV lasers have gained significantly in power, become more reliable and lower in cost. On a separate front, the cost of ownership reduction for Excimer lasers has made this class of lasers attractive for structuring redistribution layers of IC substrates with feature sizes down to 2μm. Improvements in reliability and lower up-front cost for picosecond lasers is enabling applications that previously were only cost effective with mechanical means or long-pulsed lasers. We can now span the gamut from 100μm to 2μm for via drilling and can cost effectively structure redistribution layers with lasers instead of UV lamps or singulate packages with picosecond lasers.

Examination of the laser-induced variations in the chemical etch rate of a photosensitive glass ceramic

NASA Astrophysics Data System (ADS)

Voges, Melanie; Beversdorff, Manfred; Willert, Chris; Krain, Hartmut

2007-10-01

Previous studies in our laboratory have reported that the chemical etch rate of a commercial photosensitive glass ceramic (FoturanTM, Schott Corp., Germany) in dilute hydrofluoric acid is strongly dependent on the incident laser irradiance during patterning at λ=266 nm and λ=355 nm. To help elucidate the underlying chemical and physical processes associated with the laser-induced variations in the chemical etch rate, several complimentary techniques were employed at various stages of the UV laser exposure and thermal treatment. X-ray diffraction (XRD) was used to identify the crystalline phases that are formed in Foturan following laser irradiation and annealing, and monitor the crystalline content as a function of laser irradiance at λ=266 nm and λ=355 nm. The XRD results indicate the nucleation of lithium metasilicate (Li2SiO3) crystals as the exclusive phase following laser irradiation and thermal treatment at temperatures not exceeding 605 °C. The XRD studies also show that the Li2SiO3 density increases with increasing laser irradiance and saturates at high laser irradiance. For our thermal treatment protocol, the average Li2SiO3 crystal diameters are 117.0±10.0 nm and 91.2±5.8 nm for λ=266 nm and λ=355 nm, respectively. Transmission electron microscopy (TEM) was utilized to examine the microscopic structural features of the lithium metasilicate crystals. The TEM results reveal that the growth of lithium metasilicate crystals proceeds dendritically, and produces Li2SiO3 crystals that are ˜700 1000 nm in length for saturation exposures. Optical transmission spectroscopy (OTS) was used to study the growth of metallic silver clusters that act as nucleation sites for the Li2SiO3 crystalline phase. The OTS results show that the (Ag0)x cluster concentration has a dependence on incident laser irradiance that is similar to the etch rate ratios and Li2SiO3 concentration. A comparison between the XRD and optical transmission results and our prior etch rate results show that the etch rate contrast and absolute etch rates are dictated by the Li2SiO3 concentration, which is in turn governed by the (Ag0)x cluster concentration. These results characterize the relationship between the laser exposure and chemical etch rate for Foturan, and permit a more detailed understanding of the photophysical processes that occur in the general class of photostructurable glass ceramic materials. Consequently, these results may also influence the laser processing of other photoactive materials.

Near-ultraviolet light-emitting diodes with transparent conducting layer of gold-doped multi-layer graphene

NASA Astrophysics Data System (ADS)

Cho, Chu-Young; Choe, Minhyeok; Lee, Sang-Jun; Hong, Sang-Hyun; Lee, Takhee; Lim, Wantae; Kim, Sung-Tae; Park, Seong-Ju

2013-03-01

We report on gold (Au)-doped multi-layer graphene (MLG), which can be used as a transparent conducting layer in near-ultraviolet light-emitting diodes (NUV-LEDs). The optical output power of NUV-LEDs with thermally annealed Au-doped MLG was increased by 34% compared with that of NUV-LEDs with a bare MLG. This result is attributed to the reduced sheet resistance and the enhanced current injection efficiency of NUV-LEDs by the thermally annealed Au-doped MLG film, which shows high transmittance in NUV and UV regions and good adhesion of Au-doped MLG on p-GaN layer of NUV-LEDs.

Intense excitation source of blue-green laser

NASA Astrophysics Data System (ADS)

Han, K. S.

1985-10-01

An intense and efficient excitation source for blue-green lasers useful for the space-based satellite laser applications, underwater strategic communication, and measurement of ocean bottom profile is being developed. The source in use, hypocycloidal pinch plasma (HCP), and a newly designed dense-plasma focus (DPF) can produce intense UV photons (200 to 300 nm) which match the absorption spectra of both near UV and blue green dye lasers (300 to 400 nm). During the current project period, the successful enhancement of blue-green laser output of both Coumarin 503 and LD490 dye through the spectral conversion of the HCP pumping light has been achieved with a converter dye BBQ. The factor of enhancement in the blue-green laser output energy of both Coumarin 503 and LD490 is almost 73%. This enhancement will definitely be helpful in achieving the direct high power blue-green laser (> 1 MW) with the existing blue green dye laser. On the other hand the dense-plasma focus (DPF) with new optical coupling has been designed and constructed. For the optimization of the DPF device as the UV pumping light source, the velocity of current sheath and the formation of plasma focus have been measured as function of argon or argon-deuterium fill gas pressure. Finally, the blue-green dye laser (LD490) has been pumped with the DPF device for preliminary tests. Experimental results with the DPF device show that the velocity of the current sheath follows the inverse relation of sq st. of pressure as expected. The blue-green dye (LD490) laser output exceeded 3.1 m at the best cavity tuning of laser system. This corresponds to 3J/1 cu cm laser energy extraction.

Composition and method of preparation of solid state dye laser rods

DOEpatents

Hermes, Robert E.

1992-01-01

The present invention includes solid polymeric-host laser rods prepared using bulk polymerization of acrylic acid ester comonomers which, when admixed with dye(s) capable of supporting laser oscillation and polymerized with a free radical initiator under mild thermal conditions, produce a solid product having the preferred properties for efficient lasing. Unsaturated polymerizable laser dyes can also be employed as one of the comonomers. Additionally, a method is disclosed which alleviates induced optical stress without having to anneal the polymers at elevated temperatures (>85.degree. C.).

Utilizing dynamic laser speckle to probe nanoscale morphology evolution in nanoporous gold thin films

DOE PAGES

Chapman, Christopher A. R.; Ly, Sonny; Wang, Ling; ...

2016-03-02

Here we show the use of dynamic laser speckle autocorrelation spectroscopy in conjunction with the photothermal treatment of nanoporous gold (np-Au) thin films to probe nanoscale morphology changes during the photothermal treatment. Utilizing this spectroscopy method, backscattered speckle from the incident laser is tracked during photothermal treatment and both the characteristic feature size and annealing time of the film are determined. These results demonstrate that this method can successfully be used to monitor laser-based surface modification processes without the use of ex-situ characterization.

Utilizing dynamic laser speckle to probe nanoscale morphology evolution in nanoporous gold thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chapman, Christopher A. R.; Ly, Sonny; Wang, Ling

Here we show the use of dynamic laser speckle autocorrelation spectroscopy in conjunction with the photothermal treatment of nanoporous gold (np-Au) thin films to probe nanoscale morphology changes during the photothermal treatment. Utilizing this spectroscopy method, backscattered speckle from the incident laser is tracked during photothermal treatment and both the characteristic feature size and annealing time of the film are determined. These results demonstrate that this method can successfully be used to monitor laser-based surface modification processes without the use of ex-situ characterization.

UV reactor flow visualization and mixing quantification using three-dimensional laser-induced fluorescence.

PubMed

Gandhi, Varun; Roberts, Philip J W; Stoesser, Thorsten; Wright, Harold; Kim, Jae-Hong

2011-07-01

Three-dimensional laser-induced fluorescence (3DLIF) was applied to visualize and quantitatively analyze mixing in a lab-scale UV reactor consisting of one lamp sleeve placed perpendicular to flow. The recirculation zone and the von Karman vortex shedding that commonly occur in flows around bluff bodies were successfully visualized. Multiple flow paths were analyzed by injecting the dye at various heights with respect to the lamp sleeve. A major difference in these pathways was the amount of dye that traveled close to the sleeve, i.e., a zone of higher residence time and higher UV exposure. Paths away from the center height had higher velocities and hence minimal influence by the presence of sleeve. Approach length was also characterized in order to increase the probability of microbes entering the region around the UV lamp. The 3DLIF technique developed in this study is expected to provide new insight on UV dose delivery useful for the design and optimization of UV reactors. Copyright © 2011 Elsevier Ltd. All rights reserved.

Production of High Intracavity UV Power From a CW Laser Source

NASA Technical Reports Server (NTRS)

David, R. T.; Chyba, T. H.; Keppel, C. E.; Gaskell, D.; Ent, R.

1998-01-01

The goal of this research project is to create a prototype high power CW source of ultraviolet (UV) photons for photon-electron scattering at the Thomas Jefferson National Accelerator Facility (TJNAF), Hall B. The facility will use optical resonant cavities to produce a high photon flux. The technical approach will be to frequency-double the 514.5 mn light from an Argon-Ion Laser to create 0.1 to 1.0 watt in the UV. The produced UV power will be stored in a resonant cavity to generate an high intracavity UV power of 102 to 103 watts. The specific aim of this project is to first design and construct the low-Q doubling cavity and lock it to the Argon-Ion wavelength. Secondly, the existing 514.5 nm high-Q build-up cavity and its locking electronics will be modified to create high intracavity UV power. The entire system will then be characterized and evaluated for possible beam line use.

Deep-UV Based Acousto-Optic Tunable Filter for Spectral Sensing Applications

NASA Technical Reports Server (NTRS)

Prasad, Narasimha S.

2006-01-01

In this paper, recent progress made in the development of quartz and KDP crystal based acousto-optic tunable filters (AOTF) are presented. These AOTFs are developed for operation over deep-UV to near-UV wavelengths of 190 nm to 400 nm. Preliminary output performance measurements of quartz AOTF and design specifications of KDP AOTF are presented. At 355 nm, the quartz AOTF device offered approx.15% diffraction efficiency with a passband full-width-half-maximum (FWHM) of less than 0.0625 nm. Further characterization of quartz AOTF devices at deep-UV wavelengths is progressing. The hermetic packaging of KDP AOTF is nearing completion. The solid-state optical sources being used for excitation include nonlinear optics based high-energy tunable UV transmitters that operate around 320 nm and 308 nm wavelengths, and a tunable deep-UV laser operating over 193 nm to 210 nm. These AOTF devices have been developed as turn-key devices for primarily for space-based chemical and biological sensing applications using laser induced Fluorescence and resonance Raman techniques.

Identification of Cr valence states in Cr and Nd co-doped Lu3Al5O12 laser ceramics

NASA Astrophysics Data System (ADS)

Zhang, Pande; Jiang, Benxue; Fan, Jintai; Mao, Xiaojian; Zhang, Long

2017-09-01

Cr and Nd co-doped laser ceramics, as the potential gain materials in inertial confinement fusion (ICF), have been widely investigated. And the study on valence states of chromium ions is important. The effects of sintering additives and annealing atmosphere on the valence state of chromium were studied in detail, and the results shown that the Cr valence states were demonstrated to be Cr2+ and Cr3+ ions in HIP-sintered Cr(0.2 at.%), Nd(0.8 at.%): LuAG laser ceramics. And the intensity of the near-infrared absorption band caused by Cr2+ ions was attenuated with the decreasing SiO2 concentration and increasing MgO amount. The near-infrared absorption could be eliminated by annealing in air. And the transformation of valence states of Cr ions in the Cr,Nd:LuAG ceramics were also confirmed by electron paramagnetic resonance and X-ray photoelectron spectroscopy.

Bright and multicolor luminescent colloidal Si nanocrystals prepared by pulsed laser irradiation in liquid

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nakamura, Toshihiro, E-mail: nakamura@el.gunma-u.ac.jp; Watanabe, Kanta; Adachi, Sadao

2016-01-11

We reported the preparation of bright and multicolor luminescent colloidal Si nanocrystal (Si-nc) by pulsed UV laser irradiation to porous Si (PSi) in an organic solvent. The different-luminescence-color (different-sized) colloidal Si-nc was produced by the pulsed laser-induced fragmentation of different-sized porous nanostructures. The colloidal Si-nc samples were found to have higher photoluminescence quantum efficiencies (20%–23%) than the PSi samples (1%–3%). The brighter emission of the colloidal Si-nc was attributed to an enhanced radiative band-to-band transition rate due to the presence of a surface organic layer formed by UV laser-induced hydrosilylation.

Designs for optimizing depth of focus and spot size for UV laser ablation

NASA Astrophysics Data System (ADS)

Wei, An-Chi; Sze, Jyh-Rou; Chern, Jyh-Long

2010-11-01

The proposed optical systems are designed for extending the depths of foci (DOF) of UV lasers, which can be exploited in the laser-ablation technologies, such as laser machining and lithography. The designed systems are commonly constructed by an optical module that has at least one aspherical surface. Two configurations of optical module, lens-only and lens-reflector, are presented with the designs of 2-lens and 1-lens-1-reflector demonstrated by commercially optical software. Compared with conventional DOF-enhanced systems, which required the chromatic aberration lenses and the light sources with multiple wavelengths, the proposed designs are adapted to the single-wavelength systems, leading to more economical and efficient systems.

Laser effect on the 248 nm KrF transition using heavy ion beam pumping

NASA Astrophysics Data System (ADS)

Adonin, A.; Jacoby, J.; Turtikov, V.; Fertman, A.; Golubev, A.; Hoffmann, D. H. H.; Ulrich, A.; Varentsov, D.; Wieser, J.

2007-07-01

In December 2005 the first successful operation of a UV excimer laser pumped with a heavy ion beam was demonstrated at GSI. It was the first experiment in which the specific power deposition was sufficient to overcome laser threshold for a UV excimer scheme. The well known KrF* excimer laser line at λ=248 nm has been chosen for this experiment, because the wavelength is short, but still in the range of usual optical diagnostic tools and the emitted light can propagate in air without attenuation. A bunch compressed U+73238 beam with a particle energy of 250 MeV/u and about 110 ns pulse duration (FWHM) was used for this experiment. Single pulses of a beam intensity up to 2.5×109 particles per bunch were focused into the laser cell along the cavity axis. Compact spectrometers, high speed UV-photodiodes and gated CCD-cameras were used for diagnostics of the spontaneous and stimulated emission. As a main result of the experiment laser effect on the 248 nm KrF* excimer laser line has been obtained and verified by temporal and spectral narrowing of the laser line as well as the threshold behaviour and exponential growth of intensity with increasing pumping power. In summary it could be shown that the pumping power of the heavy ion beam at GSI is now sufficient to pump short wavelength lasers. It is planned to extend laser experiments in near future to the VUV range of the spectrum (λ<200 nm).

Raman and thermal-stability studies on annealed HgBa 2CuO 4+δ

NASA Astrophysics Data System (ADS)

Ren, Y. T.; Chang, H.; Xiong, Q.; Xue, Y. Y.; Chu, C. W.

1994-06-01

We have studied as-synthesized, vacuum-annealed and high-pressure oxygen annealed HgBa 2CuO 4+δ(Hg-1201) using Raman scattering. The apical-oxygen vibrational frequencies showed a slight but systematic shift (590, 591 and 587 cm -1), in agreement with the slight change in the Hg-O bond length from neutron-diffraction results. This suggested that the valence of Hg did not change significantly with oxygen content. The intensity of the ∼ 570 cm -1 peak decreased significantly after vacuum anneal and increased after high-pressure oxygen anneal, confirming the early assignment of this mode to interstitial oxygen. The thermal stability of these samples was studied by increasing laser power. High power density resulted in the decomposition of Hg-1201, mainly to BaCuO 2-δ, suggesting mercury loss upon local heating. It was found that the annealed samples decomposed more easily. In addition, one kind of crystallites exhibited a 326 cm -1 broad peak, which disappeared after high-power irradiation. We propose that this extra peak may come from HgO and/or the defect oxygen O (4).

Ultrafast disk technology enables next generation micromachining laser sources

NASA Astrophysics Data System (ADS)

Heckl, Oliver H.; Weiler, Sascha; Luzius, Severin; Zawischa, Ivo; Sutter, Dirk

2013-02-01

Ultrashort pulsed lasers based on thin disk technology have entered the 100 W regime and deliver several tens of MW peak power without chirped pulse amplification. Highest uptime and insensitivity to back reflections make them ideal tools for efficient and cost effective industrial micromachining. Frequency converted versions allow the processing of a large variety of materials. On one hand, thin disk oscillators deliver more than 30 MW peak power directly out of the resonator in laboratory setups. These peak power levels are made possible by recent progress in the scaling of the pulse energy in excess of 40 μJ. At the corresponding high peak intensity, thin disk technology profits from the limited amount of material and hence the manageable nonlinearity within the resonator. Using new broadband host materials like for example the sesquioxides will eventually reduce the pulse duration during high power operation and further increase the peak power. On the other hand industry grade amplifier systems deliver even higher peak power levels. At closed-loop controlled 100W, the TruMicro Series 5000 currently offers the highest average ultrafast power in an industry proven product, and enables efficient micromachining of almost any material, in particular of glasses, ceramics or sapphire. Conventional laser cutting of these materials often requires UV laser sources with pulse durations of several nanoseconds and an average power in the 10 W range. Material processing based on high peak power laser sources makes use of multi-photon absorption processes. This highly nonlinear absorption enables micromachining driven by the fundamental (1030 nm) or frequency doubled (515 nm) wavelength of Yb:YAG. Operation in the IR or green spectral range reduces the complexity and running costs of industrial systems initially based on UV light sources. Where UV wavelength is required, the TruMicro 5360 with a specified UV crystal life-time of more than 10 thousand hours of continues operation at 15W is an excellent choice. Currently this is the world's most powerful industrial sub-10 ps UV laser.

Enhancing Protein Disulfide Bond Cleavage by UV Excitation and Electron Capture Dissociation for Top-Down Mass Spectrometry.

PubMed

Wongkongkathep, Piriya; Li, Huilin; Zhang, Xing; Loo, Rachel R Ogorzalek; Julian, Ryan R; Loo, Joseph A

2015-11-15

The application of ion pre-activation with 266 nm ultraviolet (UV) laser irradiation combined with electron capture dissociation (ECD) is demonstrated to enhance top-down mass spectrometry sequence coverage of disulfide bond containing proteins. UV-based activation can homolytically cleave a disulfide bond to yield two separated thiol radicals. Activated ECD experiments of insulin and ribonuclease A containing three and four disulfide bonds, respectively, were performed. UV-activation in combination with ECD allowed the three disulfide bonds of insulin to be cleaved and the overall sequence coverage to be increased. For the larger sized ribonuclease A with four disulfide bonds, irradiation from an infrared laser (10.6 µm) to disrupt non-covalent interactions was combined with UV-activation to facilitate the cleavage of up to three disulfide bonds. Preferences for disulfide bond cleavage are dependent on protein structure and sequence. Disulfide bonds can reform if the generated radicals remain in close proximity. By varying the time delay between the UV-activation and the ECD events, it was determined that disulfide bonds reform within 10-100 msec after their UV-homolytic cleavage.

Rapid thermal annealing of Amorphous Hydrogenated Carbon (a-C:H) films

NASA Technical Reports Server (NTRS)

Alterovitz, Samuel A.; Pouch, John J.; Warner, Joseph D.

1987-01-01

Amorphous hydrogenated carbon (a-C:H) films were deposited on silicon and quartz substrates by a 30 kHz plasma discharge technique using methane. Rapid thermal processing of the films was accomplished in nitrogen gas using tungsten halogen light. The rapid thermal processing was done at several fixed temperatures (up to 600 C), as a function of time (up to 1800 sec). The films were characterized by optical absorption and by ellipsometry in the near UV and the visible. The bandgap, estimated from extrapolation of the linear part of a Tauc plot, decreases both with the annealing temperature and the annealing time, with the temperature dependence being the dominating factor. The density of states parameter increases up to 25 percent and the refractive index changes up to 20 percent with temperature increase. Possible explanations of the mechanisms involved in these processes are discussed.

Restorative effect of oxygen annealing on device performance in HfIZO thin-film transistors

NASA Astrophysics Data System (ADS)

Ha, Tae-Jun

2015-03-01

Metal-oxide based thin-film transistors (oxide-TFTs) are very promising for use in next generation electronics such as transparent displays requiring high switching and driving performance. In this study, we demonstrate an optimized process to secure excellent device performance with a favorable shift of the threshold voltage toward 0V in amorphous hafnium-indium-zinc-oxide (a-HfIZO) TFTs by using post-treatment with oxygen annealing. This enhancement results from the improved interfacial characteristics between gate dielectric and semiconductor layers due to the reduction in the density of interfacial states related to oxygen vacancies afforded by oxygen annealing. The device statistics confirm the improvement in the device-to-device and run-to-run uniformity. We also report on the photo-induced stability in such oxide-TFTs against long-term UV irradiation, which is significant for transparent displays.

Pulsed UV laser technologies for ophthalmic surgery

NASA Astrophysics Data System (ADS)

Razhev, A. M.; Chernykh, V. V.; Bagayev, S. N.; Churkin, D. S.; Kargapol'tsev, E. S.; Iskakov, I. A.; Ermakova, O. V.

2017-01-01

The paper provides an overview of the results of multiyear joint researches of team of collaborators of Institute of Laser Physics SB RAS together with NF IRTC “Eye Microsurgery” for the period from 1988 to the present, in which were first proposed and experimentally realized laser medical technologies for correction of refractive errors of known today as LASIK, the treatment of ophthalmic herpes and open-angle glaucoma. It is proposed to carry out operations for the correction of refractive errors the use of UV excimer KrCl laser with a wavelength of 222 nm. The same laser emission is the most suitable for the treatment of ophthalmic herpes, because it has a high clinical effect, combined with many years of absence of recrudescence. A minimally invasive technique of glaucoma operations using excimer XeCl laser (λ=308 nm) is developed. Its wavelength allows perform all stages of glaucoma operations, while the laser head itself has high stability and lifetime, will significantly reduce operating costs, compared with other types of lasers.

Effect of Annealing Temperature on Structural and Optical Properties of Sol-Gel-Derived ZnO Thin Films

NASA Astrophysics Data System (ADS)

Arif, Mohd.; Sanger, Amit; Vilarinho, Paula M.; Singh, Arun

2018-04-01

Nanocrystalline ZnO thin films were deposited on glass substrate via sol-gel dip-coating technique then annealed at 300°C, 400°C, and 500°C for 1 h. Their optical, structural, and morphological properties were studied using ultraviolet-visible (UV-Vis) spectrophotometry, x-ray diffraction (XRD) analysis, and scanning electron microscopy (SEM). XRD diffraction revealed that the crystalline nature of the thin films increased with increasing annealing temperature. The c-axis orientation improved, and the grain size increased, as indicated by increased intensity of the (002) plane peak at 2θ = 34.42° corresponding to hexagonal ZnO crystal. The average crystallite size of the thin films ranged from 13 nm to 23 nm. Increasing the annealing temperature resulted in larger crystallite size and higher crystallinity with increased surface roughness. The grain size according to SEM analysis was in good agreement with the x-ray diffraction data. The optical bandgap of the thin films narrowed with increasing annealing temperature, lying in the range of 3.14 eV to 3.02 eV. The transmission of the thin films was as high as 94% within the visible region. The thickness of the thin films was 400 nm, as measured by ellipsometry, after annealing at the different temperatures of 300°C, 400°C, and 500°C.

Refractive index engineering of poly (vinyl alcohol)/Li2ZnO2 nanocomposites: Effect of filler content and annealing temperature

NASA Astrophysics Data System (ADS)

Subramani, Nithin Kundachira; Shivanna, Sachhidananda; Nagaraj, Shilpa Kasargod; Siddaramaiah, Hatna

2018-04-01

Herein, we report the successful formulation and refractive index (RI) engineering of poly (vinyl alcohol) (PVA) films with varying amounts viz., 0.5, 1, 2 and 4 wt% lithium zincate (Li2ZnO2) nanoparticles. The as developed nanocomposite (NC) films were structurally characterized by powder X-ray diffraction (P-XRD) studies, that validate the presence of Li2ZnO2 nanofillers in PVA host. While, Li2ZnO2 nanofiller induced changes in morphological behaviors were validated from scanning electron microscopic (SEM) studies. The UV - visible transmittance studies narrate excellent UV (< 400 nm) harvesting abilities of NC films, in conjunction with a near complete visible (> 400 nm) transmittance. The transmittance intensity was found to exhibit a monotonic decrease with nanofiller content, especially in the UV regions. The absorption edges were found to be down-shifted towards lower energy values exhibiting a minimum of 4.42 eV for PVA/4 wt% Li2ZnO2 NC film. Further, the RI of the PVA films showed a gradual increase from 1.72 to 2.21 with an increase in filling levels (FLs) from 0 to 4 wt%. The effect of annealing on optical transmittance and RI of PVA films were also studied at different temperatures. The PVA/Li2ZnO2 NC films were also studied for their light emitting functionalities.

TiO2/WO3 photoactive bilayers in the UV-Vis light region

NASA Astrophysics Data System (ADS)

Vasilaki, E.; Vernardou, D.; Kenanakis, G.; Vamvakaki, M.; Katsarakis, N.

2017-04-01

In this work, photoactive bilayered films consisting of anatase TiO2 and monoclinic WO3 were synthesized by a sol-gel route. Titanium isopropoxide and tungsten hexachloride were used as metal precursors and deposition was achieved by spin-coating on Corning glass substrates. The samples were characterized by X-ray diffraction, photoluminescence, UV-Vis, and Raman spectroscopy, as well as field emission scanning electron microscopy. The prepared immobilized catalysts were tested for their photocatalytic performance by the decolorization of methylene blue in aqueous matrices, under UV-Vis light irradiation. The annealing process influenced the crystallinity of the bilayered films, while the concentration of the tungsten precursor solution and the position of the tungsten trioxide layer further affected their photocatalytic performance. In particular, the photocatalytic performance of the bilayered films was optimized at a concentration of 0.1 M of the WO3 precursor solution, when deposited as an overlying layer on TiO2 by two annealing steps ( 76% methylene blue decolorization in 300 min of irradiation versus 59% in the case of a bare TiO2 film). In general, the coupled layer catalysts exhibited superior photoactivity compared to that of bare TiO2 films with WO3 acting as an electron trap, resulting, therefore, in a more efficient electron-hole separation and inhibiting their recombination.

Effect of thermal annealing on structural and optical properties of In{sub 2}S{sub 3} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choudhary, Sonu, E-mail: sonuchoudhary1983@gmail.com

2015-08-28

There is a highly need of an alternate of toxic materials CdS for solar cell applications and indium sulfide is found the most suitable candidate to replace CdS due to its non-toxic and environmental friendly nature. In this paper, the effect of thermal annealing on the structural and optical properties of indium sulfide (In{sub 2}S{sub 3}) thin films is undertaken. The indium sulfide thin films of 121 nm were deposited on glass substrates employing thermal evaporation method. The films were subjected to the X-ray diffractometer and UV-Vis spectrophotometer respectively for structural and optical analysis. The XRD pattern show that themore » as-deposited thin film was amorphous in nature and crystallinity is found to be varied with annealing temperature. The optical analysis reveals that the optical band gap is varied with annealing. The optical parameters like absorption coefficient, extinction coefficient and refractive index were calculated. The results are in good agreement with available literature.« less

Current-voltage characteristics of n-AlMgZnO/p-GaN junction diodes

NASA Astrophysics Data System (ADS)

Hsueh, Kuang-Po; Cheng, Po-Wei; Cheng, Yi-Chang; Sheu, Jinn-Kong; Yeh, Yu-Hsiang; Chiu, Hsien-Chin; Wang, Hsiang-Chun

2013-03-01

This study investigates the temperature dependence of the current-voltage (I-V) characteristics of Al-doped MgxZn1-xO/p-GaN junction diodes. Specifically, this study reports the deposition of n-type Al-doped MgxZn1-xO (AMZO) films on p-GaN using a radio-frequency (RF) magnetron sputtering system followed by annealing at 700, 800, 900, and 1000 °C in a nitrogen ambient for 60 seconds, respectively. The AMZO/GaN films were thereafter analyzed using Hall measurement and the x-ray diffraction (XRD) patterns. The XRD results show that the diffraction angles of the annealed AMZO films remain the same as that of GaN without shifting. The n-AMZO/p-GaN diode with 900 °C annealing had the lowest leakage current in forward and reverse bias. However, the leakage current of the diodes did not change significantly with an increase in annealing temperatures. These findings show that the n-AMZO/p-GaN junction diode is feasible for GaN-based heterojunction bipolar transistors (HBTs) and UV light-emitting diodes (LEDs).

Post-annealing effect on optical absorbance of hydrothermally grown zinc oxide nanorods

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mohar, Rahmat Setiawan; Djuhana, Dede; Imawan, Cuk

In this study, the optical absorbance of zinc oxide (ZnO) nanorods was investigated. The ZnO thin film were deposited on indium tin oxide (ITO) layers using ultrasonic spray pyrolysis (USP) method and then grown by hydrothermal method. In order to improve the optical absorbance, the ZnO nanorods were then post-annealed for one hour at three different of temperatures, namely 250, 400, and 500 °C. The X-ray diffraction (XRD) spectra and FESEM images show that the ZnO nanorods have the hexagonal wurtzite crystal structure and the increasing of post-annealing temperature resulted in the increasing of crystallite size from 38.2 nm to 48.4 nm.more » The UV-vis spectra shows that all samples of ZnO nanorods exhibited the identical sharp absorption edge at 390 nm indicating that all samples have the same bandgap. The post-annealing process seemed to decrease the optical absorbance in the region of 300-550 nm and increase the optical absorbance in the region of 550-700 nm..« less

Towards eye-safe standoff Raman imaging systems

NASA Astrophysics Data System (ADS)

Glimtoft, Martin; Bââth, Petra; Saari, Heikki; Mäkynen, Jussi; Näsilä, Antti; Östmark, Henric

2014-05-01

Standoff Raman imaging systems have shown the ability to detect single explosives particles. However, in many cases, the laser intensities needed restrict the applications where they can be safely used. A new generation imaging Raman system has been developed based on a 355 nm UV laser that, in addition to eye safety, allows discrete and invisible measurements. Non-dangerous exposure levels for the eye are several orders of magnitude higher in UVA than in the visible range that previously has been used. The UV Raman system has been built based on an UV Fabry-Perot Interferometer (UV-FPI) developed by VTT. The design allows for precise selection of Raman shifts in combination with high out-of-band blocking. The stable operation of the UV-FPI module under varying environmental conditions is arranged by controlling the temperature of the module and using a closed loop control of the FPI air gap based on capacitive measurement. The system presented consists of a 3rd harmonics Nd:YAG laser with 1.5 W average output at 1000 Hz, a 200 mm Schmidt-Cassegrain telescope, UV-FPI filter and an ICCD camera for signal gating and detection. The design principal leads to a Raman spectrum in each image pixel. The system is designed for field use and easy manoeuvring. Preliminary results show that in measurements of <60 s on 10 m distance, single AN particles of <300 μm diameter can be identified.

The effect of water uptake on the mechanical properties of low-k organosilicate glass

NASA Astrophysics Data System (ADS)

Guo, X.; Jakes, J. E.; Nichols, M. T.; Banna, S.; Nishi, Y.; Shohet, J. L.

2013-08-01

Water uptake in porous low-k dielectrics has become a significant challenge for both back-end-of-line integration and circuit reliability. The influence of absorbed water on the mechanical properties of plasma-enhanced chemical-vapor-deposited organosilicate glasses (SiCOH) was investigated with nanoindentation. The roles of physisorbed (α-bonded) and chemisorbed (β-bonded) water were examined separately through annealing at different temperatures. Nanoindentation measurements were performed on dehydrated organosilicate glass during exposure to varying humidity conditions. The elastic modulus and hardness for as-deposited SiCOH are intimately linked to the nature and concentration of the absorbed water in the dielectric. Under mild-annealing conditions, the water-related film mechanical property changes were shown to be reversible. The mechanical properties of UV-cured SiCOH were also shown to depend on absorbed water, but to a lesser extent because UV curing depopulates the hydrophilic chemical groups in SiCOH. High-load indentation tests showed that in-diffusion of water in the film/substrate interface can degrade the hardness of SiCOH/Si film stacks significantly, while not significantly changing the elastic modulus.

Effect of Pre-Irradiation Annealing and Laser Modification on the Formation of Radiation-Induced Surface Color Centers in Lithium Fluoride

NASA Astrophysics Data System (ADS)

Voitovich, A. P.; Kalinov, V. S.; Novikov, A. N.; Radkevich, A. V.; Runets, L. P.; Stupak, A. P.; Tarasenko, N. V.

2017-01-01

It is shown that surface color centers of the same type are formed in the surface layer and in regions with damaged crystal structure inside crystalline lithium fluoride after γ-irradiation. Results are presented from a study of the effect of pre-irradiation annealing on the efficiency with which surface centers are formed in lithium fluoride nanocrystals. Raising the temperature for pre-irradiation annealing from room temperature to 250°C leads to a substantial reduction in the efficiency with which these centers are created. Surface color centers are not detected after γ-irradiation for pre-irradiation annealing temperatures of 300°C and above. Adsorption of atmospheric gases on the crystal surface cannot be regarded as a necessary condition for the formation of radiation-induced surface centers.

Using KrF ELA to Improve Gate-Stacked LaAlO₃/ZrO₂ Indium Gallium Zinc Oxide Thin-Film Transistors with Novel Atmospheric Pressure Plasma-Enhanced Chemical Vapor Deposition Technique.

PubMed

Wu, Chien-Hung; Chang, Kow-Ming; Chen, Yi-Ming; Huang, Bo-Wen; Zhang, Yu-Xin; Wang, Shui-Jinn

2018-03-01

Atmospheric pressure plasma-enhanced chemical vapor deposition (AP-PECVD) technique and KrF excimer laser annealing (ELA) were employed for the fabrication of indium gallium zinc oxide thin-film transistors (IGZO-TFTs). Device with a 150 mJ/cm2 laser annealing densities demonstrated excellent electrical characteristics with improved on/off current ratio of 4.7×107, high channel mobility of 10 cm2/V-s, and low subthreshold swing of 0.15 V/dec. The improvements are attributed to the adjustment of oxygen vacancies in the IGZO channel to an appropriate range of around 28.3% and the reduction of traps at the high-k/IGZO interface.

Optical properties of highly n-doped germanium obtained by in situ doping and laser annealing

NASA Astrophysics Data System (ADS)

Frigerio, J.; Ballabio, A.; Gallacher, K.; Giliberti, V.; Baldassarre, L.; Millar, R.; Milazzo, R.; Maiolo, L.; Minotti, A.; Bottegoni, F.; Biagioni, P.; Paul, D.; Ortolani, M.; Pecora, A.; Napolitani, E.; Isella, G.

2017-11-01

High n-type doping in germanium is essential for many electronic and optoelectronic applications especially for high performance Ohmic contacts, lasing and mid-infrared plasmonics. We report on the combination of in situ doping and excimer laser annealing to improve the activation of phosphorous in germanium. An activated n-doping concentration of 8.8  ×  1019 cm-3 has been achieved starting from an incorporated phosphorous concentration of 1.1  ×  1020 cm-3. Infrared reflectivity data fitted with a multi-layer Drude model indicate good uniformity over a 350 nm thick layer. Photoluminescence demonstrates clear bandgap narrowing and an increased ratio of direct to indirect bandgap emission confirming the high doping densities achieved.

Ultraviolet, visible, and infrared laser delivery using laser-to-fiber coupling via a grazing-incidence-based hollow taper

NASA Astrophysics Data System (ADS)

Ilev, Ilko K.; Waynant, Ronald W.

2001-01-01

We present a novel all-optical-waveguide method for ultraviolet (UV), visible (VIS) and infrared (IR) laser delivery including a lens-free method of laser-to-fiber coupling using a simple uncoated glass hollow taper. Based on the grazing incidence effect, the hollow taper provides a way of direct launching, without any intermediate focusing elements, high power laser radiation into delivery fibers. Because of the mutual action of the nearly parallel laser excitation, the mode coupling process, and mode filtering effect, the hollow taper serves as a mode converter that transforms the highly multimode profile of the input laser emission into a high-quality Gaussian-shaped profile at the taper output. When the grazing incidence effect of the taper is applied to laser delivery, the maintenance of high reflectance coefficients in a wide spectral region allows to utilize the same uncoated hollow taper for laser radiation in the UV, VIS and IR ranges. Applying the experimental hollow-taper based delivery systems, we obtain high laser- to-taper and taper-to-fiber coupling efficiencies.

Toward a comprehensive UV laser ablation modeling of multicomponent materials—A non-equilibrium investigation on titanium carbide

NASA Astrophysics Data System (ADS)

Ait Oumeziane, Amina; Parisse, Jean-Denis

2018-05-01

Titanium carbide (TiC) coatings of great quality can be produced using nanosecond pulsed laser deposition (PLD). Because the deposition rate and the transfer of the target stoichiometry depend strongly on the laser-target/laser-plasma interaction as well as the composition of the laser induced plume, investigating the ruling fundamental mechanisms behind the material ablation and the plasma evolution in the background environment under PLD conditions is essential. This work, which extends previous investigations dedicated to the study of nanosecond laser ablation of pure target materials, is a first step toward a comprehensive non-equilibrium model of multicomponent ones. A laser-material interaction model coupled to a laser-plasma interaction one is presented. A UV 20 ns KrF (248 nm) laser pulse is considered. Ablation depths, plasma ignition thresholds, and shielding rates have been calculated for a wide range of laser beam fluences. A comparison of TiC behavior with pure titanium material under the same conditions is made. Plasma characteristics such as temperature and composition have been investigated. An overall correlation between the various results is presented.

Laser post-processing of Inconel 625 made by selective laser melting

NASA Astrophysics Data System (ADS)

Witkin, David; Helvajian, Henry; Steffeney, Lee; Hansen, William

2016-04-01

The effect of laser remelting of surfaces of as-built Selective Laser Melted (SLM) Inconel 625 was evaluated for its potential to improve the surface roughness of SLM parts. Many alloys made by SLM have properties similar to their wrought counterparts, but surface roughness of SLM-made parts is much higher than found in standard machine shop operations. This has implications for mechanical properties of SLM materials, such as a large debit in fatigue properties, and in applications of SLM, where surface roughness can alter fluid flow characteristics. Because complexity and netshape fabrication are fundamental advantages of Additive Manufacturing (AM), post-processing by mechanical means to reduce surface roughness detracts from the potential utility of AM. Use of a laser to improve surface roughness by targeted remelting or annealing offers the possibility of in-situ surface polishing of AM surfaces- the same laser used to melt the powder could be amplitude modulated to smooth the part during the build. The effects of remelting the surfaces of SLM Inconel 625 were demonstrated using a CW fiber laser (IPG: 1064 nm, 2-50 W) that is amplitude modulated with a pulse profile to induce remelting without spallation or ablation. The process achieved uniform depth of melting and improved surface roughness. The results show that with an appropriate pulse profile that meters the heat-load, surface features such as partially sintered powder particles and surface connected porosity can be mitigated via a secondary remelting/annealing event.

Third-harmonic generation and scattering in combustion flames using a femtosecond laser filament.

PubMed

Zang, Hong-Wei; Li, He-Long; Su, Yue; Fu, Yao; Hou, Meng-Yao; Baltuška, Andrius; Yamanouchi, Kaoru; Xu, Huailiang

2018-02-01

Coherent radiation in the ultraviolent (UV) range has high potential applicability to the diagnosis of the formation processes of soot in combustion because of the high scattering efficiency in the UV wavelength region, even though the UV light is lost largely by the absorption within the combustion flames. We show that the third harmonic (TH) of a Ti:sapphire 800 nm femtosecond laser is generated in a laser-induced filament in a combustion flame and that the conversion efficiency of the TH varies sensitively by the ellipticity of the driver laser pulse but does not vary so much by the choice of alkanol species introduced as fuel for the combustion flames. We also find that the TH recorded from the side direction of the filament is the Rayleigh scattering of the TH by soot nanoparticles within the flame and that the intensity of the TH varies depending on the fuel species as well as on the position of the laser filament within the flame. Our results show that a remote and in situ measurement of distributions of soot nanoparticles in a combustion flame can be achieved by Rayleigh scattering spectroscopy of the TH generated by a femtosecond-laser-induced filament in the combustion flame.

Role of Ga particulates on the structure and optical properties of Y3(Al,Ga)5O12:Tb thin films prepared by PLD

NASA Astrophysics Data System (ADS)

Yousif, A.; Duvenhage, M. M.; Ntwaeaborwa, O. M.; Swart, H. C.

2018-04-01

Y3(Al,Ga)5O12:Tb thin films (70 nm) have been prepared by pulsed laser deposition on a Si (100) substrate at the substrate temperature of 300 °C. The effect of annealing time on the structural, morphological and luminescence properties of Y3(Al,Ga)5O12:Tb thin films at 800 °C were studied. The crystal structure of the samples was studied by X- ray diffraction (XRD) and showed shifts in the peak positions to lower diffraction angles for the annealed film compared to the XRD peak positions of the commercial Y3(Al,Ga)5O12:Tb powder. A new excitation band different from the original Y3(Al,Ga)5O12:Tb powder was also observed for the annealed films. The shift in the XRD pattern and the new excitation band for the annealed film suggested that the films were enriched with Ga after annealing.

Structural and optical properties of annealed and illuminated (Ag3AsS3)0.6(As2S3)0.4 thin films

NASA Astrophysics Data System (ADS)

Studenyak, I. P.; Neimet, Yu. Yu.; Rati, Y. Y.; Stanko, D.; Kranjčec, M.; Kökényesi, S.; Daróci, L.; Bohdan, R.

2014-11-01

(Ag3AsS3)0.6(As2S3)0.4 thin films were deposited upon a quartz substrate by rapid thermal evaporation. Structural studies of the as-deposited, annealed and illuminated films were performed using XRD, scanning electron and atomic force microscopies. Surfaces of all the films were found to be covered with Ag-rich crystalline micrometer sized cones. Thermal annealing leads to mechanical deformation of part of the cones and their detachment from the base film surface while the laser illumination leads to the new formations appearance on the surface of thin films. The spectroscopic studies of optical transmission spectra for as-deposited, annealed and illuminated thin films were carried out. The optical absorption spectra in the region of its exponential behaviour were analysed, the dispersion dependences of refractive index as well as their variation after annealing and illumination were investigated.

Quantum coherent π-electron rotations in a non-planar chiral molecule induced by using a linearly polarized UV laser pulse

NASA Astrophysics Data System (ADS)

Mineo, Hirobumi; Fujimura, Yuichi

2015-06-01

We propose an ultrafast quantum switching method of π-electron rotations, which are switched among four rotational patterns in a nonplanar chiral aromatic molecule (P)-2,2’- biphenol and perform the sequential switching among four rotational patterns which are performed by the overlapped pump-dump laser pulses. Coherent π-electron dynamics are generated by applying the linearly polarized UV pulse laser to create a pair of coherent quasidegenerated excited states. We also plot the time-dependent π-electron ring current, and discussed ring current transfer between two aromatic rings.

Laser synthesis and spectroscopy of acetonitrile/silver nanoparticles

NASA Astrophysics Data System (ADS)

Akin, S. T.; Liu, X.; Duncan, M. A.

2015-11-01

Silver nanoparticles with acetonitrile ligands are produced in a laser ablation flow reactor. Excimer laser ablation produces gas phase metal clusters which are thermalized with helium or argon collisions in the flowtube, and reactions with acetonitrile vapor coordinate this ligand to the particle surface. The gaseous mixture is captured in a cryogenic trap; warming produces a solution of excess ligand and coated particles. TEM images reveal particle sizes of 10-30 nm diameter. UV-vis absorption and fluorescence spectra are compared to those of standard silver nanoparticles with surfactant coatings. Deep-UV ligand absorption is strongly enhanced by nanoparticle adsorption.

Modification of the amorphous carbon films by the ns-laser irradiation

NASA Astrophysics Data System (ADS)

Grigonis, Alfonsas; Marcinauskas, Liutauras; Vinciunaite, Vinga; Raciukaitis, Gediminas

2011-10-01

The effect of a nanosecond laser irradiation of thin (60 and 145 nm) amorphous, diamond-like carbon films deposited on Si substrate by an ion beam deposition (IBD) from pure acetylene and acetylene/hydrogen (1:2) gas mixture was analyzed in this work. The films were irradiated with the infrared (IR) and ultraviolet (UV) radiation of the nanosecond Nd:YAG lasers working at the first (1.16 eV) and the third (3.48 eV) harmonics, using a multi-shot regime. The IR laser irradiation stimulated a minor increase in the fraction of sp2 bonds, causing a slight decrease in the hardness of the films and initiated SiC formation. Irradiation with the UV laser caused the formation of carbides and increased hydrogenization of the Si substrate and the fraction of sp2 sites. Spalliation and ablation were observed at a higher energy density and with a large number of laser pulses per spot.

μ-Rainbow: CdSe Nanocrystal Photoluminescence Gradients via Laser Spike Annealing for Kinetic Investigations and Tunable Device Design.

PubMed

Treml, Benjamin E; Jacobs, Alan G; Bell, Robert T; Thompson, Michael O; Hanrath, Tobias

2016-02-10

Much of the promise of nanomaterials derives from their size-dependent, and hence tunable, properties. Impressive advances have been made in the synthesis of nanoscale building blocks with precisely tailored size, shape and composition. Significant attention is now turning toward creating thin film structures in which size-dependent properties can be spatially programmed with high fidelity. Nonequilibrium processing techniques present exciting opportunities to create nanostructured thin films with unprecedented spatial control over their optical and electronic properties. Here, we demonstrate single scan laser spike annealing (ssLSA) on CdSe nanocrystal (NC) thin films as an experimental test bed to illustrate how the size-dependent photoluminescence (PL) emission can be tuned throughout the visible range and in spatially defined profiles during a single annealing step. Through control of the annealing temperature and time, we discovered that NC fusion is a kinetically limited process with a constant activation energy in over 2 orders of magnitude of NC growth rate. To underscore the broader technological implications of this work, we demonstrate the scalability of LSA to process large area NC films with periodically modulated PL emission, resulting in tunable emission properties of a large area film. New insights into the processing-structure-property relationships presented here offer significant advances in our fundamental understanding of kinetics of nanomaterials as well as technological implications for the production of nanomaterial films.

Microchip Lasers

DTIC Science & Technology

2016-10-31

microchip laser : (top) schematic and (bottom) photograph of working device mounted on 12.7-mm- dia. post. switch 17 (355-nm UV ), 1.5 µJ of fourth......USA E-mail: zayhowski@ll.mit.edu Abstract Microchip lasers are a rich family of solid-state lasers defined by their small size, robust integration

Raman study of TiO2 coatings modified by UV pulsed laser

NASA Astrophysics Data System (ADS)

Belka, Radosław; Keczkowska, Justyna; Sek, Piotr

2016-12-01

The TiO2 coatings were prepared by simple sol-gel method and modified by UV pulsed laser. TiO2, also know as titania, is a ceramic compound, existing in numerous polymorphic forms, mainly as tetragonal rutile and anatase, and rhomboidal brookite. Rutile is the most stable form of titanium dioxide, whereas anatase is a metastable form, created in lower temperatures than rutile. Anatase is marked with higher specific surface area, porosity and a higher number of surface hydroxyl groups as compared to rutile. The unique optical and electronic properties of TiO2 results in its use as semiconductors dielectric mirrors, sunscreen and UV-blocking pigments and especially as photocatalyst. In this paper, the tetraisopropoxide was used as Ti precursor according to sol-gel method. An organic base was applied during sol preparation. Prepared gel was coated on glass substrates and calcined in low temperature to obtain amorphous phase of titania. Prepared coatings were modified by UV picosecond pulse laser with different pulse repetition rate and pulse power. Physical modification of the coatings using laser pulses was intended in order change the phase content of the produced material. Raman spectroscopy (RS) method was applied to studies of modified coatings as it is one of the basic analytical techniques, supporting the identification of compounds and obtaining information about the structure. Especially, RS is a useful method for distinguishing the anatase and rutile phases. In these studies, anatase to rutile transformation was observed, depending on laser parameters.

Rapid, controllable, one-pot and room-temperature aqueous synthesis of ZnO:Cu nanoparticles by pulsed UV laser and its application for photocatalytic degradation of methyl orange.

PubMed

Arabi, Mozhgan; Baizaee, Seyyed Mahdy; Bahador, Alireza; Otaqsara, Seyed Mohammad Taheri

2018-05-01

Zinc oxide (ZnO) and ZnO:Cu nanoparticles (NPs) were synthesized using a rapid, controllable, one-pot and room-temperature pulsed UV-laser assisted method. UV-laser irradiation was used as an effective energy source in order to gain better control over the NPs size and morphology in aqueous media. Parameters effective in laser assisted synthesis of NPs such as irradiation time and laser shot repetition rate were optimized. Photoluminescence (PL) spectra of ZnO NPs showed a broad emission with two trap state peaks located at 442 and 485 nm related to electronic transition from zinc interstitial level (I Zn ) to zinc vacancy level (V Zn ) and electronic transition from conduction band to the oxygen vacancy level (V O ), respectively. For ZnO:Cu NPs, trap state emissions disappeared completely and a copper (Cu)-related emission appeared. PL intensity of Cu-related emission increased with the increase in concentration of Cu 2+ , so that for molar ratio of Cu:Zn 2%, optimal value of PL intensity was obtained. The photocatalytic activity of Cu-doped ZnO revealed 50 and 100% increasement than that of undoped NPs under UV and visible irradiation, respectively. The enhanced photocatalytic activity could be attributed to smaller crystal size, as well as creation of impurity acceptor levels (T 2 ) inside the ZnO energy band gap. Copyright © 2017 John Wiley & Sons, Ltd.

Matrix Optical Absorption in UV-MALDI MS

NASA Astrophysics Data System (ADS)

Robinson, Kenneth N.; Steven, Rory T.; Bunch, Josephine

2018-03-01

In ultraviolet matrix-assisted laser desorption/ionization mass spectrometry (UV-MALDI MS) matrix compound optical absorption governs the uptake of laser energy, which in turn has a strong influence on experimental results. Despite this, quantitative absorption measurements are lacking for most matrix compounds. Furthermore, despite the use of UV-MALDI MS to detect a vast range of compounds, investigations into the effects of laser energy have been primarily restricted to single classes of analytes. We report the absolute solid state absorption spectra of the matrix compounds α-cyano-4-hydroxycinnamic acid (CHCA), para-nitroaniline (PNA), 2-mercaptobenzothiazole (MBT), 2,5-dihydroxybenzoic acid (2,5-DHB), and 2,4,6-trihydroxyacetophenone (THAP). The desorption/ionization characteristics of these matrix compounds with respect to laser fluence was investigated using mixed systems of matrix with either angiotensin II, PC(34:1) lipid standard, or haloperidol, acting as representatives for typical classes of analyte encountered in UV-MALDI MS. The first absolute solid phase spectra for PNA, MBT, and THAP are reported; additionally, inconsistencies between previously published spectra for CHCA are resolved. In light of these findings, suggestions are made for experimental optimization with regards to matrix and laser wavelength selection. The relationship between matrix optical cross-section and wavelength-dependant threshold fluence, fluence of maximum ion yield, and R, a new descriptor for the change in ion intensity with fluence, are described. A matrix cross-section of 1.3 × 10-17 cm-2 was identified as a potential minimum for desorption/ionization of analytes.

Matrix Optical Absorption in UV-MALDI MS.

PubMed

Robinson, Kenneth N; Steven, Rory T; Bunch, Josephine

2018-03-01

In ultraviolet matrix-assisted laser desorption/ionization mass spectrometry (UV-MALDI MS) matrix compound optical absorption governs the uptake of laser energy, which in turn has a strong influence on experimental results. Despite this, quantitative absorption measurements are lacking for most matrix compounds. Furthermore, despite the use of UV-MALDI MS to detect a vast range of compounds, investigations into the effects of laser energy have been primarily restricted to single classes of analytes. We report the absolute solid state absorption spectra of the matrix compounds α-cyano-4-hydroxycinnamic acid (CHCA), para-nitroaniline (PNA), 2-mercaptobenzothiazole (MBT), 2,5-dihydroxybenzoic acid (2,5-DHB), and 2,4,6-trihydroxyacetophenone (THAP). The desorption/ionization characteristics of these matrix compounds with respect to laser fluence was investigated using mixed systems of matrix with either angiotensin II, PC(34:1) lipid standard, or haloperidol, acting as representatives for typical classes of analyte encountered in UV-MALDI MS. The first absolute solid phase spectra for PNA, MBT, and THAP are reported; additionally, inconsistencies between previously published spectra for CHCA are resolved. In light of these findings, suggestions are made for experimental optimization with regards to matrix and laser wavelength selection. The relationship between matrix optical cross-section and wavelength-dependant threshold fluence, fluence of maximum ion yield, and R, a new descriptor for the change in ion intensity with fluence, are described. A matrix cross-section of 1.3 × 10 -17 cm -2 was identified as a potential minimum for desorption/ionization of analytes. Graphical Abstract ᅟ.

Ultraviolet Channeling Dynamics in Gaseous Media for X -- Ray Production

NASA Astrophysics Data System (ADS)

McCorkindale, John Charters

The development of a coherent high brightness / short duration X -- ray source has been of considerable interest to the scientific community as well as various industries since the invention of the technology. Possible applications include X -- ray lithography, biological micro-imaging and the probing of molecular and atomic dynamics. One such source under investigation involves the interaction of a high pulsed power KrF UV laser with a noble gas target (krypton or xenon), producing a photon energy from 1 -- 5 keV. Amplification in this regime requires materials with very special properties found in spatially organized hollow atom clusters. One of the driving forces behind X -- ray production is the UV laser. Theoretical analysis shows that above a critical laser power, the formation of a stable plasma channel in the gaseous medium will occur which can act as a guide for the X-ray pulse and co-propagating UV beam. These plasma channels are visualized with a triple pinhole camera, axial and transverse von Hamos spectrometers and a Thomson scattering setup. In order to understand observed channel morphologies, full characterization of the drive laser was achieved using a Transient Grating -- Frequency Resolved Optical Gating (TG-FROG) technique which gives a full temporal representation of the electric field and associated phase of the ultrashort pulse. Insights gleaned from the TG -- FROG data as well as analysis of photodiode diagnostics placed along the UV laser amplification chain provide explanations for the plasma channel morphology and X -- ray output.

Direct synthesis of graphitic mesoporous carbon from green phenolic resins exposed to subsequent UV and IR laser irradiations

PubMed Central

Sopronyi, Mihai; Sima, Felix; Vaulot, Cyril; Delmotte, Luc; Bahouka, Armel; Matei Ghimbeu, Camelia

2016-01-01

The design of mesoporous carbon materials with controlled textural and structural features by rapid, cost-effective and eco-friendly means is highly demanded for many fields of applications. We report herein on the fast and tailored synthesis of mesoporous carbon by UV and IR laser assisted irradiations of a solution consisting of green phenolic resins and surfactant agent. By tailoring the UV laser parameters such as energy, pulse repetition rate or exposure time carbon materials with different pore size, architecture and wall thickness were obtained. By increasing irradiation dose, the mesopore size diminishes in the favor of wall thickness while the morphology shifts from worm-like to an ordered hexagonal one. This was related to the intensification of phenolic resin cross-linking which induces the reduction of H-bonding with the template as highlighted by 13C and 1H NMR. In addition, mesoporous carbon with graphitic structure was obtained by IR laser irradiation at room temperature and in very short time periods compared to the classical long thermal treatment at very high temperatures. Therefore, the carbon texture and structure can be tuned only by playing with laser parameters, without extra chemicals, as usually required. PMID:28000781

Study of noninvasive detection of latent fingerprints using UV laser

NASA Astrophysics Data System (ADS)

Li, Hong-xia; Cao, Jing; Niu, Jie-qing; Huang, Yun-gang; Mao, Lin-jie; Chen, Jing-rong

2011-06-01

Latent fingerprints present a considerable challenge in forensics, and noninvasive procedure that captures a digital image of the latent fingerprints is significant in the field of criminal investigation. The capability of photography technologies using 266nm UV Nd:YAG solid state laser as excitation light source to provide detailed images of unprocessed latent fingerprints is demonstrated. Unprocessed latent fingerprints were developed on various non-absorbent and absorbing substrates. According to the special absorption, reflection, scattering and fluorescence characterization of the various residues in fingerprints (fatty acid ester, protein, and carbosylic acid salts etc) to the UV light to weaken or eliminate the background disturbance and increase the brightness contrast of fingerprints with the background, and using 266nm UV laser as excitation light source, fresh and old latent fingerprints on the surface of four types of non-absorbent objects as magazine cover, glass, back of cellphone, wood desktop paintwork and two types of absorbing objects as manila envelope, notebook paper were noninvasive detected and appeared through reflection photography and fluorescence photography technologies, and the results meet the fingerprint identification requirements in forensic science.

Measurements of Raman scattering in the middle ultraviolet band from persistent chemical warfare agents

NASA Astrophysics Data System (ADS)

Kullander, Fredrik; Landström, Lars; Lundén, Hampus; Mohammed, Abdesalam; Olofsson, Göran; Wästerby, Pär.

2014-05-01

The very low Raman scattering cross section and the fluorescence background limit the measuring range of Raman based instruments operating in the visible or infrared band. We are exploring if laser excitation in the middle ultraviolet (UV) band between 200 and 300 nm is useful and advantageous for detection of persistent chemical warfare agents (CWA) on various kinds of surfaces. The UV Raman scattering from tabun, mustard gas, VX and relevant simulants in the form of liquid surface contaminations has been measured using a laboratory experimental setup with a short standoff distance around 1 meter. Droplets having a volume of 1 μl were irradiated with a tunable pulsed laser swept within the middle UV band. A general trend is that the signal strength moves through an optimum when the laser excitation wavelength is swept between 240 and 300 nm. The signal from tabun reaches a maximum around 265 nm, the signal from mustard gas around 275 nm. The Raman signal from VX is comparably weak. Raman imaging by the use of a narrow bandpass UV filter is also demonstrated.

Single- and Multilayered Nanostructures via Laser-Induced Block Copolymer Self-Assembly

NASA Astrophysics Data System (ADS)

Majewski, Pawel; Yager, Kevin; Rahman, Atikur; Black, Charles

We present a novel method of accelerated self-assembly of block copolymer thin films utilizing laser light, called Laser Zone Annealing (LZA). In our approach, steep temperature transients are induced in block copolymer films by rastering narrowly focused laser line over the light-absorbing substrate. Extremely steep temperature gradients accelerate the process of self-assembly by several orders-of-magnitude compared to conventional oven annealing, and, when coupled to photo-thermal shearing, lead to global alignment of block copolymer domains assessed by GISXAS diffraction studies and real-space SEM imaging. We demonstrate monolithic alignment of various block-copolymer thin films including PS-b-PMMA, PS-b-PEO, PS-b-P2VP, PS-b-PI and observe different responsiveness to the shearing rate depending on the characteristic relaxation timescale of the particular material. Subsequently, we use the aligned polymeric films as templates for synthesis of single- and multi-layered arrays of inorganic, metallic or semiconducting nanowires and nanomeshes and investigate their anisotropic electro-optical properties. Research carried out in part at the Center for Functional Nanomaterials, Brookhaven National Laboratory, which is supported by the U.S. Department of Energy, Office of Basic Energy Sciences, under Contract No. DE-AC02-98CH10886.

Ellipsometric study of YBa2Cu3O(7-x) laser ablated and co-evaporated films

NASA Technical Reports Server (NTRS)

Alterovitz, S. A.; Sieg, R. E.; Warner, J. D.; Stan, M. A.; Vitta, S.

1990-01-01

High temperature superconducting films of YBa2Cu3O(7-x) (YBCO were grown on SrTiO3, LaA1O3, and YSZ substrates using two techniques: excimer laser ablation with in situ annealing and co-evaporation of Y, Cu, and BaF2 with ex-situ annealing. Film thicknesses were typically 5000 A, with predominant c-axis alignment perpendicular to the substrate. Critical temperatures up to Tc(R=O)=90 K were achieved by both techniques. Ellipsometric measurements were taken in the range 1.6 to 4.3 eV using a variable angle spectroscopic ellipsometer. The complex dielectric function of the laser ablated films was reproducible from run to run, and was found to be within 10 percent of that previously reported for (001) oriented single crystals. A dielectric overlayer was observed in these films, with an index of refraction of approximately 1.55 and nearly zero absorption. For the laser ablated films the optical properties were essentially independent of substrate material. The magnitude of the dielectric function obtained for the co-evaported films was much lower than the value reported for single crystals, and was sample dependent.

Different behaviors in the transformation of PATP adsorbed on Ag or Au nanoparticles investigated by surface-enhanced Raman spectroscopy - A study of the effects from laser energy and annealing

NASA Astrophysics Data System (ADS)

Xu, Jian-Fang; Luo, Shi-Yi; Liu, Guo-Kun

2015-05-01

In order to explore the key role of surface plasmon resonance (SPR) and active 3O2 for the chemical transformation to 4,4-dimercaptoazobenzene (DMAB) from p-aminothiophenol (PATP) adsorbed on Ag or Au NPs, we systematically investigated the laser wavelength and temperature dependent surface-enhanced Raman spectra of PATP capped Ag and Au NPs. DMAB can be easily observed at the 514.5 nm laser for Ag NPs but at the 632.8 nm laser for Au NPs, indicating that a suitable energy level is necessary for the formation of DMAB. The tendency is consistent with the wavelength dependent SPR properties of Ag or Au NPs accordingly. With the energy provided by annealing, the transformation of PATP to DMAB is much easier on Ag NPs at a lower temperature, and more DMAB can be observed at the same temperature, compared to the case of Au NPs under the same condition. It is mainly due to the active 3O2 on Ag surfaces could be more easily formed than that on Au surfaces.

Synthesis of Poly-Silicon Thin Films on Glass Substrate Using Laser Initiated Metal Induced Crystallization of Amorphous Silicon for Space Power Application

NASA Technical Reports Server (NTRS)

Abu-Safe, Husam H.; Naseem, Hameed A.; Brown, William D.

2007-01-01

Poly-silicon thin films on glass substrates are synthesized using laser initiated metal induced crystallization of hydrogenated amorphous silicon films. These films can be used to fabricate solar cells on low cost glass and flexible substrates. The process starts by depositing 200 nm amorphous silicon films on the glass substrates. Following this, 200 nm of sputtered aluminum films were deposited on top of the silicon layers. The samples are irradiated with an argon ion cw laser beam for annealing. Laser power densities ranging from 4 to 9 W/cm2 were used in the annealing process. Each area on the sample is irradiated for a different exposure time. Optical microscopy was used to examine any cracks in the films and loss of adhesion to the substrates. X-Ray diffraction patterns from the initial results indicated the crystallization in the films. Scanning electron microscopy shows dendritic growth. The composition analysis of the crystallized films was conducted using Energy Dispersive x-ray Spectroscopy. The results of poly-silicon films synthesis on space qualified flexible substrates such as Kapton are also presented.

Advanced Micro-Polycrystalline Silicon Films Formed by Blue-Multi-Laser-Diode Annealing

NASA Astrophysics Data System (ADS)

Noguchi, Takashi; Chen, Yi; Miyahira, Tomoyuki; de Dieu Mugiraneza, Jean; Ogino, Yoshiaki; Iida, Yasuhiro; Sahota, Eiji; Terao, Motoyasu

2010-03-01

Semiconductor blue-multi-laser-diode annealing (BLDA) for amorphous Si film was performed to obtain a film containing uniform polycrystalline silicon (poly-Si) grains as a low temperature poly-Si (LTPS) process used for thin-film transistor (TFT). By adopting continuous wave (CW) mode at the 445 nm wavelength of the BLDA system, the light beam is efficiently absorbed into the thin amorphous silicon film of 50 nm thickness and can be crystallized stably. By adjusting simply the laser power below 6 W with controlled beam shape, the isotropic Si grains from uniform micro-grains to arbitral grain size of polycrystalline phase can be obtained with reproducible by fixing the scan speed at 500 mm/s. As a result of analysis using electron microscopy and atomic force microscopy (AFM), uniform distributed micro-poly-Si grains of smooth surface were observed at a power condition below 5 W and the preferred crystal orientation of (111) face was confirmed. As arbitral grain size can be obtained stably and reproducibly merely by controlling the laser power, BLDA is promising as a next-generation LTPS process for AM OLED panel including a system on glass (SoG).

Compact Ozone Differential Absorption Lidar (DIAL) Transmitter Using Solid-State Dye Polymers

NASA Technical Reports Server (NTRS)

Jones, Alton L., Jr.; DeYoung, Russell J.; Elsayid-Ele, Hani

2001-01-01

A new potential DIAL laser transmitter is described that uses solid-state dye laser materials to make a simpler, more compact, lower mass laser system. Two solid-state dye laser materials were tested to evaluate their performance in a laser oscillator cavity end pumped by a pulsed Nd:YAG laser at 532 nm. The polymer host polymethyl-methacrylate was injected with a pyrromethene laser dye, PM 580, or PM 597. A narrowband laser oscillator cavity was constructed to produce visible wavelengths of 578 and 600 nm which were frequency doubled into the UV region (299 or 300 nm) by using a BBO crystal, resulting in a maximum energy of 11 mJ at a wavelength of 578 nm when pumped by the Nd:YAG laser at an energy of 100 mJ (532 nm). A maximum output energy of 378 microJ was achieved in the UV region at a wavelength of 289 nm but lasted only 2000 laser shots at a repetition rate of 10 Hz. The results are promising and show that a solid-state dye laser based ozone DIAL system is possible with improvements in the design of the laser transmitter.

X-ray Characterization and Defect Control of III-Nitrides

NASA Astrophysics Data System (ADS)

Tweedie, James

A process for controlling point defects in a semiconductor using excess charge carriers was developed in theory and practice. A theoretical framework based on first principles was developed to model the effect of excess charge carriers on the formation energy and concentration of charged point defects in a semiconductor. The framework was validated for the completely general case of a generic carrier source and a generic point defect in a generic semiconductor, and then refined for the more specific case of a generic carrier source applied during the growth of a doped semiconductor crystal. It was theoretically demonstrated that the process as defined will always reduce the degree of compensation in the semiconductor. The established theoretical framework was applied to the case of above-bandgap illumination on both the MOCVD growth and the post-growth annealing of Mg-doped GaN thin films. It was theoretically demonstrated that UV light will lower the concentration of compensating defects during growth and will facilitate complete activation of the Mg acceptor at lower annealing temperatures. Annealing experiments demonstrated that UV illumination of GaN:Mg thin films during annealing lowers the resistivity of the film at any given temperature below the 650 °C threshold at which complete activation is achieved without illumination. Broad spectrum analysis of the photoluminescence (PL) spectra together with a correlation between the acceptor-bound exciton transition and room temperature resistivity demonstrated that UV light only acts to enhance the activation Mg. Surface chemistry and interface chemistry of AlN and high Al mole fraction AlGaN films were studied using x-ray photoelectron spectroscopy (XPS). It was seen that surfaces readily form stable surface oxides. The Schottky barrier height (SBH) of various metals contacted to these surfaces was using XPS. Finally, an x-ray diffraction method (XRD) was developed to quantify strain and composition of alloy films in the context of a processing environment. Reciprocal space mapping revealed intensity limitations on the accuracy of the method. The method was used to demonstrate a bimodal strain distribution across the composition spectrum for 200 nm AlGaN thin films grown on GaN. A weak, linear strain dependence on composition was observed for Al mole fractions below 30%. Above this threshold the films were observed to be completely relaxed by cracking.

UV-Enhanced IR Raman System for Identifying Biohazards

NASA Technical Reports Server (NTRS)

Stirbl, Robert; Moynihan, Philip; Lane, Arthur

2003-01-01

An instrumentation system that would include an ultraviolet (UV) laser or light-emitting diode, an infrared (IR) laser, and the equivalent of an IR Raman spectrometer has been proposed to enable noncontact identification of hazardous biological agents and chemicals. In prior research, IR Raman scattering had shown promise as a means of such identification, except that the Raman-scattered light was often found to be too weak to be detected or to enable unambiguous identification in practical applications. The proposed system would utilize UV illumination as part of a two-level optical-pumping scheme to intensify the Raman signal sufficiently to enable positive identification.

Production of organic compounds in plasmas - A comparison among electric sparks, laser-induced plasmas, and UV light

NASA Technical Reports Server (NTRS)

Scattergood, Thomas W.; Mckay, Christopher P.; Borucki, William J.; Giver, Lawrence P.; Van Ghyseghem, Hilde

1989-01-01

In order to ascertain the features of organic compound-production in planetary atmospheres under the effects of plasmas and shocks, various mixtures of N2, CH4, and H2 modeling the atmosphere of Titan were subjected to discrete sparks, laser-induced plasmas, and UV radiation. The experimental results obtained suggest that UV photolysis from the plasma is an important organic compound synthesis process, as confirmed by the photolysis of gas samples that were exposed to the light but not to the shock waves emitted by the sparks. The thermodynamic equilibrium theory is therefore incomplete in the absence of photolysis.

Facile synthesis of Au-ZnO plasmonic nanohybrids for highly efficient photocatalytic degradation of methylene blue

NASA Astrophysics Data System (ADS)

Kuriakose, Sini; Sahu, Kavita; Khan, Saif A.; Tripathi, A.; Avasthi, D. K.; Mohapatra, Satyabrata

2017-02-01

Au-ZnO plasmonic nanohybrids were synthesized by a facile two step process. In the first step, nanostructured ZnO thin films were prepared by carbothermal evaporation followed by thermal annealing in oxygen atmosphere. Deposition of ultrathin Au films onto the nanostructured ZnO thin films by sputtering combined with thermal annealing resulted in the formation of Au-ZnO plasmonic nanohybrid thin films. The structural, optical, plasmonic and photocatalytic properties of the Au-ZnO nanohybrid thin films were studied. XRD studies on the Au-ZnO hybrid thin films revealed the presence of Au and ZnO nanostructures. UV-visible absorption studies showed two peaks corresponding to the excitonic absorption of ZnO nanostructures in the UV region and the surface plasmon resonance (SPR) absorption of Au nanoparticles in the visible region. The Au-ZnO nanohybrid thin films annealed at 400 °C showed enhanced photocatalytic activity as compared to nanostructrured ZnO thin films towards sun light driven photocatalytic degradation of methylene blue (MB) dye in water. The observed enhanced photocatalytic activity of Au-ZnO plasmonic nanohybrids is attributed to the efficient suppression of the recombination of photogenerated charge carriers in ZnO due to the strong electron scavenging action of Au nanoparticles combined with the improved sun light utilization capability of Au-ZnO nanohybrids coming from the plasmonic response of Au nanoparticles decorating ZnO nanostructures.

Test measurements on a secco white-lead containing model samples to assess the effects of exposure to low-fluence UV laser radiation

NASA Astrophysics Data System (ADS)

Raimondi, Valentina; Andreotti, Alessia; Colombini, Maria Perla; Cucci, Costanza; Cuzman, Oana; Galeotti, Monica; Lognoli, David; Palombi, Lorenzo; Picollo, Marcello; Tiano, Piero

2015-05-01

Laser-induced fluorescence technique is widely used for diagnostic purposes in several applications and its use could be of advantage for non-invasive on-site characterisation of pigments or other compounds in wall paintings. However, it is well known that long-time exposure to UV and VIS radiation can cause damage to wall paintings. Several studies have investigated the effects of lighting, e.g., in museums: however, the effects of low-fluence laser radiation have not been studied much so far. This paper investigates the effects of UV laser radiation using fluences in the range of 0.1 mJ/cm2-1 mJ/cm2 on a set of a secco model samples prepared with lead white and different type of binders (animal glue and whole egg, whole egg, skimmed milk, egg-oil tempera). The samples were irradiated using a Nd:YAG laser (emission wavelength at 355 nm; pulse width: 5 ns) by applying laser fluences between 0.1 mJ/cm2 and 1 mJ/cm2 and a number of laser pulses between 1 and 500. The samples were characterised before and after laser irradiation by using several techniques (colorimetry, optical microscopy, fibre optical reflectance spectroscopy, FT-IR spectroscopy Attenuated Total Reflectance microscopy and gas chromatography/mass spectrometry), to detect variations in the morphological and physico-chemical properties. The results did not point out significant changes in the sample properties after irradiation in the proposed range of laser fluences.

Effect of cadmium incorporation on the properties of zinc oxide thin films

NASA Astrophysics Data System (ADS)

Bharath, S. P.; Bangera, Kasturi V.; Shivakumar, G. K.

2018-02-01

Cd x Zn1- x O (0 ≤ x ≤ 0.20) thin films are deposited on soda lime glass substrates using spray pyrolysis technique. To check the thermal stability, Cd x Zn1- x O thin films are subjected to annealing. Both the as-deposited and annealed Cd x Zn1- x O thin films are characterized using X-ray diffraction (XRD), scanning electron microscope (SEM) and energy-dispersive X-ray analysis (EDAX) to check the structural, surface morphological and compositional properties, respectively. XRD analysis reveals that the both as-deposited and annealed Cd x Zn1- x O thin films are (002) oriented with wurtzite structure. SEM studies confirm that as-deposited, as well as annealed Cd x Zn1- x O thin films are free from pinholes and cracks. Compositional analysis shows the deficiency in Cd content after annealing. Optical properties evaluated from UV-Vis spectroscopy shows red shift in the band gap for Cd x Zn1- x O thin films. Electrical property measured using two probe method shows a decrease in the resistance after Cd incorporation. The results indicate that cadmium can be successfully incorporated in zinc oxide thin films to achieve structural changes in the properties of films.

Efficiency enhancement of silicon nanowire solar cells by using UV/Ozone treatments and micro-grid electrodes

NASA Astrophysics Data System (ADS)

Chen, Junyi; Subramani, Thiyagu; Sun, Yonglie; Jevasuwan, Wipakorn; Fukata, Naoki

2018-05-01

Silicon nanowire solar cells were fabricated by metal catalyzed electroless etching (MCEE) followed by thermal chemical vapor deposition (CVD). In this study, we investigated two effects, a UV/ozone treatment and the use of a micro-grid electrodes, to enhance light absorption and reduce the optic losses in the solar cell device. The UV/ozone treatment successfully improved the conversion efficiency. The micro-grid electrodes were then applied in solar cell devices subjected to a back surface field (BSF) treatment and rapid thermal annealing (RTA). These effects improved the conversion efficiency from 9.4% to 10.9%. Moreover, to reduce surface recombination and improve the continuity of front electrodes, we optimized the etching time of the MCEE process, giving a high efficiency of 12.3%.