Yuan, Yongbo; Dong, Qingfeng; Yang, Bin; Guo, Fawen; Zhang, Qi; Han, Ming; Huang, Jinsong
2013-01-01
High sensitivity photodetectors in ultraviolet (UV) and infrared (IR) range have broad civilian and military applications. Here we report on an un-cooled solution-processed UV-IR photon counter based on modified organic field-effect transistors. This type of UV detectors have light absorbing zinc oxide nanoparticles (NPs) sandwiched between two gate dielectric layers as a floating gate. The photon-generated charges on the floating gate cause high resistance regions in the transistor channel and tune the source-drain output current. This "super-float-gating" mechanism enables very high sensitivity photodetectors with a minimum detectable ultraviolet light intensity of 2.6 photons/μm(2)s at room temperature as well as photon counting capability. Based on same mechansim, infrared photodetectors with lead sulfide NPs as light absorbing materials have also been demonstrated.
A Programmable and Configurable Mixed-Mode FPAA SoC
2016-03-17
A Programmable and Configurable Mixed-Mode FPAA SoC Sahil Shah, Sihwan Kim, Farhan Adil, Jennifer Hasler, Suma George, Michelle Collins, Richard...Abstract: The authors present a Floating-Gate based, System-On-Chip large-scale Field- Programmable Analog Array IC that integrates divergent concepts...Floating-Gate, SoC, Command Word Classification This paper presents a Floating-Gate (FG) based, System- On-Chip (SoC) large-scale Field- Programmable
Nonvolatile programmable neural network synaptic array
NASA Technical Reports Server (NTRS)
Tawel, Raoul (Inventor)
1994-01-01
A floating-gate metal oxide semiconductor (MOS) transistor is implemented for use as a nonvolatile analog storage element of a synaptic cell used to implement an array of processing synaptic cells. These cells are based on a four-quadrant analog multiplier requiring both X and Y differential inputs, where one Y input is UV programmable. These nonvolatile synaptic cells are disclosed fully connected in a 32 x 32 synaptic cell array using standard very large scale integration (VLSI) complementary MOS (CMOS) technology.
Light-driven OR and XOR programmable chemical logic gates.
Szaciłowski, Konrad; Macyk, Wojciech; Stochel, Grazyna
2006-04-12
Photoelectrodes made of nanocrystalline titanium dioxide modified with various pentacyanoferrates exhibit unique photoelectrochemical properties; photocurrent direction can be switched from anodic to cathodic and vice versa upon changes in photoelectrode potential and incident light wavelength (PhotoElectrochemical Photocurrent Switching, PEPS effect). At certain potentials, anodic photocurrent generated upon UV irradiation has the same intensity as the cathodic photocurrent generated upon visible irradiation. Under these conditions, simultaneous irradiation with UV and visible light results in compensation of anodic and cathodic photocurrents, and zero net photocurrent is observed. This process can be used for construction of unique light-driven chemical logic gates.
NASA Astrophysics Data System (ADS)
Wang, Tai-Min; Chien, Wei-Yu; Hsu, Chia-Ling; Lin, Chrong Jung; King, Ya-Chin
2018-04-01
In this paper, we present a new differential p-channel multiple-time programmable (MTP) memory cell that is fully compatible with advanced 16 nm CMOS fin field-effect transistors (FinFET) logic processes. This differential MTP cell stores complementary data in floating gates coupled by a slot contact structure, which make different read currents possible on a single cell. In nanoscale CMOS FinFET logic processes, the gate dielectric layer becomes too thin to retain charges inside floating gates for nonvolatile data storage. By using a differential architecture, the sensing window of the cell can be extended and maintained by an advanced blanket boost scheme. The charge retention problem in floating gate cells can be improved by periodic restoring lost charges when significant read window narrowing occurs. In addition to high programming efficiency, this p-channel MTP cells also exhibit good cycling endurance as well as disturbance immunity. The blanket boost scheme can remedy the charge loss problem under thin gate dielectrics.
Electrically Erasable Programmable Integrated Circuits for Replacement of Obsolete TTL Logic
1991-12-01
different discrete devices" [7]. Fowler-Nordheim Tunneling Simplified Theory. Electrons in polysilicon are usually prevented from entering SiO 2 by an...overcomes the energy barrier, the tunneling electrons will not return to the polysilicon but will be carried by the electric field, causing a current to flow...Floating Gate Transistors A floating gate transistor is an insulated-gate field effect transistor (FET) that has a gate, usually made of polysilicon , which
NASA Astrophysics Data System (ADS)
Yamamoto, Makoto; Shinohara, Shuhei; Tamada, Kaoru; Ishii, Hisao; Noguchi, Yutaka
2016-03-01
Ambipolar switching behavior was observed in a silver nanoparticle (AgNP)-based single-electron transistor (SET) with tetra-tert-butyl copper phthalocyanine (ttbCuPc) as a molecular floating gate. Depending on the wavelength of the incident light, the stability diagram shifted to the negative and positive directions along the gate voltage axis. These results were explained by the photoinduced charging of ttbCuPc molecules in the vicinity of AgNPs. Moreover, multiple device states were induced by the light irradiation at a wavelength of 600 nm, suggesting that multiple ttbCuPc molecules individually worked as a floating gate.
NASA Astrophysics Data System (ADS)
Zong, Xiang-fu; Wang, Xu; Weng, Yu-min; Yan, Ren-jin; Tang, Guo-an; Zhang, Zhao-qiang
1998-10-01
In this study, finite element modeling was used to evaluate the residual thermal stress in floating-gate tunneling oxide electrically erasable programmable read only memory (FLOTOX E2 PROMs) manufacturing process. Special attention is paid to the tunnel oxide region, in which high field electron injection is the basis to E2 PROMs operation. Calculated results show the presence of large stresses and stress gradients at the fringe. This may contribute to the invalidation of E2 PROMs. A possible failure mechanism of E2 PROM related to residual thermal stress-induced leakage is proposed.
Modeling and simulation of floating gate nanocrystal FET devices and circuits
NASA Astrophysics Data System (ADS)
Hasaneen, El-Sayed A. M.
The nonvolatile memory market has been growing very fast during the last decade, especially for mobile communication systems. The Semiconductor Industry Association International Technology Roadmap for Semiconductors states that the difficult challenge for nonvolatile semiconductor memories is to achieve reliable, low power, low voltage performance and high-speed write/erase. This can be achieved by aggressive scaling of the nonvolatile memory cells. Unfortunately, scaling down of conventional nonvolatile memory will further degrade the retention time due to the charge loss between the floating gate and drain/source contacts and substrate which makes conventional nonvolatile memory unattractive. Using nanocrystals as charge storage sites reduces dramatically the charge leakage through oxide defects and drain/source contacts. Floating gate nanocrystal nonvolatile memory, FG-NCNVM, is a candidate for future memory because it is advantageous in terms of high-speed write/erase, small size, good scalability, low-voltage, low-power applications, and the capability to store multiple bits per cell. Many studies regarding FG-NCNVMs have been published. Most of them have dealt with fabrication improvements of the devices and device characterizations. Due to the promising FG-NCNVM applications in integrated circuits, there is a need for circuit a simulation model to simulate the electrical characteristics of the floating gate devices. In this thesis, a FG-NCNVM circuit simulation model has been proposed. It is based on the SPICE BSIM simulation model. This model simulates the cell behavior during normal operation. Model validation results have been presented. The SPICE model shows good agreement with experimental results. Current-voltage characteristics, transconductance and unity gain frequency (fT) have been studied showing the effect of the threshold voltage shift (DeltaVth) due to nanocrystal charge on the device characteristics. The threshold voltage shift due to nanocrystal charge has a strong effect on the memory characteristics. Also, the programming operation of the memory cell has been investigated. The tunneling rate from quantum well channel to quantum dot (nanocrystal) gate is calculated. The calculations include various memory parameters, wavefunctions, and energies of quantum well channel and quantum dot gate. The use of floating gate nanocrystal memory as a transistor with a programmable threshold voltage has been demonstrated. The incorporation of FG-NCFETs to design programmable integrated circuit building blocks has been discussed. This includes the design of programmable current and voltage reference circuits. Finally, we demonstrated the design of tunable gain op-amp incorporating FG-NCFETs. Programmable integrated circuit building blocks can be used in intelligent analog and digital systems.
Ambipolar nonvolatile memory based on a quantum-dot transistor with a nanoscale floating gate
DOE Office of Scientific and Technical Information (OSTI.GOV)
Che, Yongli; Zhang, Yating, E-mail: yating@tju.edu.cn; Song, Xiaoxian
2016-07-04
Using only solution processing methods, we developed ambipolar quantum-dot (QD) transistor floating-gate memory (FGM) that uses Au nanoparticles as a floating gate. Because of the bipolarity of the active channel of PbSe QDs, the memory could easily trap holes or electrons in the floating gate by programming/erasing (P/E) operations, which could shift the threshold voltage both up and down. As a result, the memory exhibited good programmable memory characteristics: a large memory window (ΔV{sub th} ∼ 15 V) and a long retention time (>10{sup 5 }s). The magnitude of ΔV{sub th} depended on both P/E voltages and the bias voltage (V{sub DS}): ΔV{sub th}more » was a cubic function to V{sub P/E} and linearly depended on V{sub DS}. Therefore, this FGM based on a QD transistor is a promising alternative to its inorganic counterparts owing to its advantages of bipolarity, high mobility, low cost, and large-area production.« less
Li, Dong; Chen, Mingyuan; Zong, Qijun; Zhang, Zengxing
2017-10-11
The Schottky junction is an important unit in electronics and optoelectronics. However, its properties greatly degrade with device miniaturization. The fast development of circuits has fueled a rapid growth in the study of two-dimensional (2D) crystals, which may lead to breakthroughs in the semiconductor industry. Here we report a floating-gate manipulated nonvolatile ambipolar Schottky junction memory from stacked all-2D layers of graphene-BP/h-BN/graphene (BP, black phosphorus; h-BN, hexagonal boron nitride) in a designed floating-gate field-effect Schottky barrier transistor configuration. By manipulating the voltage pulse applied to the control gate, the device exhibits ambipolar characteristics and can be tuned to act as graphene-p-BP or graphene-n-BP junctions with reverse rectification behavior. Moreover, the junction exhibits good storability properties of more than 10 years and is also programmable. On the basis of these characteristics, we further demonstrate the application of the device to dual-mode nonvolatile Schottky junction memories, memory inverter circuits, and logic rectifiers.
Floating-Point Units and Algorithms for field-programmable gate arrays
DOE Office of Scientific and Technical Information (OSTI.GOV)
Underwood, Keith D.; Hemmert, K. Scott
2005-11-01
The software that we are attempting to copyright is a package of floating-point unit descriptions and example algorithm implementations using those units for use in FPGAs. The floating point units are best-in-class implementations of add, multiply, divide, and square root floating-point operations. The algorithm implementations are sample (not highly flexible) implementations of FFT, matrix multiply, matrix vector multiply, and dot product. Together, one could think of the collection as an implementation of parts of the BLAS library or something similar to the FFTW packages (without the flexibility) for FPGAs. Results from this work has been published multiple times and wemore » are working on a publication to discuss the techniques we use to implement the floating-point units, For some more background, FPGAS are programmable hardware. "Programs" for this hardware are typically created using a hardware description language (examples include Verilog, VHDL, and JHDL). Our floating-point unit descriptions are written in JHDL, which allows them to include placement constraints that make them highly optimized relative to some other implementations of floating-point units. Many vendors (Nallatech from the UK, SRC Computers in the US) have similar implementations, but our implementations seem to be somewhat higher performance. Our algorithm implementations are written in VHDL and models of the floating-point units are provided in VHDL as well. FPGA "programs" make multiple "calls" (hardware instantiations) to libraries of intellectual property (IP), such as the floating-point unit library described here. These programs are then compiled using a tool called a synthesizer (such as a tool from Synplicity, Inc.). The compiled file is a netlist of gates and flip-flops. This netlist is then mapped to a particular type of FPGA by a mapper and then a place- and-route tool. These tools assign the gates in the netlist to specific locations on the specific type of FPGA chip used and constructs the required routes between them. The result is a "bitstream" that is analogous to a compiled binary. The bitstream is loaded into the FPGA to create a specific hardware configuration.« less
Shibao, Hideto; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro
2016-04-01
Polysilsesquioxane (PSQ) comprising 3-methacryloxypropyl groups was investigated as an ultraviolet (UV)-light curable gate dielectric-material for pentacene thin film transistors (TFTs). The surface of UV-light cured PSQ films was smoother than that of thermally cured ones, and the pentacene layers deposited on the UV-Iight cured PSQ films consisted of larger grains. However, carrier mobility of the TFTs using the UV-light cured PSQ films was lower than that of the TFTs using the thermally cured ones. It was shown that the cross-linker molecules, which were only added to the UV-light cured PSQ films, worked as a major mobility-limiting factor for the TFTs.
NASA Astrophysics Data System (ADS)
Shih, Chien-Chung; Lee, Wen-Ya; Chiu, Yu-Cheng; Hsu, Han-Wen; Chang, Hsuan-Chun; Liu, Cheng-Liang; Chen, Wen-Chang
2016-02-01
Nano-floating gate memory devices (NFGM) using metal nanoparticles (NPs) covered with an insulating polymer have been considered as a promising electronic device for the next-generation nonvolatile organic memory applications NPs. However, the transparency of the device with metal NPs is restricted to 60~70% due to the light absorption in the visible region caused by the surface plasmon resonance effects of metal NPs. To address this issue, we demonstrate a novel NFGM using the blends of hole-trapping poly (9-(4-vinylphenyl) carbazole) (PVPK) and electron-trapping ZnO NPs as the charge storage element. The memory devices exhibited a remarkably programmable memory window up to 60 V during the program/erase operations, which was attributed to the trapping/detrapping of charge carriers in ZnO NPs/PVPK composite. Furthermore, the devices showed the long-term retention time (>105 s) and WRER test (>200 cycles), indicating excellent electrical reliability and stability. Additionally, the fabricated transistor memory devices exhibited a relatively high transparency of 90% at the wavelength of 500 nm based on the spray-coated PEDOT:PSS as electrode, suggesting high potential for transparent organic electronic memory devices.
Neural dynamics in reconfigurable silicon.
Basu, A; Ramakrishnan, S; Petre, C; Koziol, S; Brink, S; Hasler, P E
2010-10-01
A neuromorphic analog chip is presented that is capable of implementing massively parallel neural computations while retaining the programmability of digital systems. We show measurements from neurons with Hopf bifurcations and integrate and fire neurons, excitatory and inhibitory synapses, passive dendrite cables, coupled spiking neurons, and central pattern generators implemented on the chip. This chip provides a platform for not only simulating detailed neuron dynamics but also uses the same to interface with actual cells in applications such as a dynamic clamp. There are 28 computational analog blocks (CAB), each consisting of ion channels with tunable parameters, synapses, winner-take-all elements, current sources, transconductance amplifiers, and capacitors. There are four other CABs which have programmable bias generators. The programmability is achieved using floating gate transistors with on-chip programming control. The switch matrix for interconnecting the components in CABs also consists of floating-gate transistors. Emphasis is placed on replicating the detailed dynamics of computational neural models. Massive computational area efficiency is obtained by using the reconfigurable interconnect as synaptic weights, resulting in more than 50 000 possible 9-b accurate synapses in 9 mm(2).
Field programmable gate array-assigned complex-valued computation and its limits
DOE Office of Scientific and Technical Information (OSTI.GOV)
Bernard-Schwarz, Maria, E-mail: maria.bernardschwarz@ni.com; Institute of Applied Physics, TU Wien, Wiedner Hauptstrasse 8, 1040 Wien; Zwick, Wolfgang
We discuss how leveraging Field Programmable Gate Array (FPGA) technology as part of a high performance computing platform reduces latency to meet the demanding real time constraints of a quantum optics simulation. Implementations of complex-valued operations using fixed point numeric on a Virtex-5 FPGA compare favorably to more conventional solutions on a central processing unit. Our investigation explores the performance of multiple fixed point options along with a traditional 64 bits floating point version. With this information, the lowest execution times can be estimated. Relative error is examined to ensure simulation accuracy is maintained.
Investigation of interface property in Al/SiO2/ n-SiC structure with thin gate oxide by illumination
NASA Astrophysics Data System (ADS)
Chang, P. K.; Hwu, J. G.
2017-04-01
The reverse tunneling current of Al/SiO2/ n-SiC structure employing thin gate oxide is introduced to examine the interface property by illumination. The gate current at negative bias decreases under blue LED illumination, yet increases under UV lamp illumination. Light-induced electrons captured by interface states may be emitted after the light sources are off, leading to the recovery of gate currents. Based on transient characteristics of gate current, the extracted trap level is close to the light energy for blue LED, indicating that electron capture induced by lighting may result in the reduction of gate current. Furthermore, bidirectional C- V measurements exhibit a positive voltage shift caused by electron trapping under blue LED illumination, while a negative voltage shift is observed under UV lamp illumination. Distinct trapping and detrapping behaviors can be observed from variations in I- V and C- V curves utilizing different light sources for 4H-SiC MOS capacitors with thin insulators.
Photoresponses in Gold Nanoparticle Single-Electron Transistors with Molecular Floating Gates
NASA Astrophysics Data System (ADS)
Noguchi, Yutaka; Yamamoto, Makoto; Ishii, Hisao; Ueda, Rieko; Terui, Toshifumi; Imazu, Keisuke; Tamada, Kaoru; Sakano, Takeshi; Matsuda, Kenji
2013-11-01
We have proposed a simple method of activating advanced functions in single-electron transistors (SETs) based on the specific properties of individual molecules. As a prototype, we fabricated a copper phthalocyanine (CuPc)-doped SET. The device consists of a gold-nanoparticle (GNP)-based SET doped with CuPc as a photoresponsive floating gate. In this paper, we report the details of the photoresponses of the CuPc-doped SET, such as conductance switching, sensitivity to the wavelength of the incident light, and multiple induced states.
Meshik, Xenia; Choi, Min; Baker, Adam; Malchow, R Paul; Covnot, Leigha; Doan, Samuel; Mukherjee, Souvik; Farid, Sidra; Dutta, Mitra; Stroscio, Michael A
2017-04-01
This study examines the ability of optically-excited titanium dioxide nanoparticles to influence voltage-gated ion channels in retinal horizontal cells. Voltage clamp recordings were obtained in the presence and absence of TiO 2 and ultraviolet laser excitation. Significant current changes were observed in response to UV light, particularly in the -40 mV to +40 mV region where voltage-gated Na + and K + channels have the highest conductance. Cells in proximity to UV-excited TiO 2 exhibited a left-shift in the current-voltage relation of around 10 mV in the activation of Na + currents. These trends were not observed in control experiments where cells were excited with UV light without being exposed to TiO 2 . Electrostatic force microscopy confirmed that electric fields can be induced in TiO 2 with UV light. Simulations using the Hodgkin-Huxley model yielded results which agreed with the experimental data and showed the I-V characteristics of individual ion channels in the presence of UV-excited TiO 2 . Copyright © 2016 Elsevier Inc. All rights reserved.
Memory operations in Au nanoparticle single-electron transistors with floating gate electrodes
NASA Astrophysics Data System (ADS)
Azuma, Yasuo; Sakamoto, Masanori; Teranishi, Toshiharu; Majima, Yutaka
2016-11-01
Floating gate memory operations are demonstrated in a single-electron transistor (SET) fabricated by a chemical assembly using the Au nanogap electrodes and the chemisorbed Au nanoparticles. By applying pulse voltages to the control gate, phase shifts were clearly and stably observed both in the Coulomb oscillations and in the Coulomb diamonds. Writing and erasing operations on the floating gate memory were reproducibly observed, and the charges on the floating gate electrodes were maintained for at least 12 h. By considering the capacitance of the floating gate electrode, the number of electrons in the floating gate electrode was estimated as 260. Owing to the stability of the fabricated SET, these writing and erasing operations on the floating gate memory can be applied to reconfigurable SET circuits fabricated by a chemically assembled technique.
NASA Astrophysics Data System (ADS)
Rafhay, Quentin; Beug, M. Florian; Duane, Russell
2007-04-01
This paper presents an experimental comparison of dummy cell extraction methods of the gate capacitance coupling coefficient for floating gate non-volatile memory structures from different geometries and technologies. These results show the significant influence of mismatching floating gate devices and reference transistors on the extraction of the gate capacitance coupling coefficient. In addition, it demonstrates the accuracy of the new bulk bias dummy cell extraction method and the importance of the β function, introduced recently in [Duane R, Beug F, Mathewson A. Novel capacitance coupling coefficient measurement methodology for floating gate non-volatile memory devices. IEEE Electr Dev Lett 2005;26(7):507-9], to determine matching pairs of floating gate memory and reference transistor.
NASA Astrophysics Data System (ADS)
Yamamoto, Makoto; Ueda, Rieko; Terui, Toshifumi; Imazu, Keisuke; Tamada, Kaoru; Sakano, Takeshi; Matsuda, Kenji; Ishii, Hisao; Noguchi, Yutaka
2014-01-01
We have proposed a gold nanoparticle (GNP)-based single-electron transistor (SET) doped with a dye molecule, where the molecule works as a photoresponsive floating gate. Here, we examined the source-drain current (I_{\\text{SD}}) at a constant drain voltage under light irradiation with various wavelengths ranging from 400 to 700 nm. Current change was enhanced at the wavelengths of 600 and 700 nm, corresponding to the optical absorption band of the doped molecule (copper phthalocyanine: CuPc). Moreover, several peaks appear in the histograms of I_{\\text{SD}} during light irradiation, indicating that multiple discrete states were induced in the device. The results suggest that the current change was initiated by the light absorption of CuPc and multiple CuPc molecules near the GNP working as a floating gate. Molecular doping can activate advanced device functions in GNP-based SETs.
NASA Technical Reports Server (NTRS)
Gosney, W. M.
1977-01-01
Electrically alterable read-only memories (EAROM's) or reprogrammable read-only memories (RPROM's) can be fabricated using a single-level metal-gate p-channel MOS technology with all conventional processing steps. Given the acronym DIFMOS for dual-injector floating-gate MOS, this technology utilizes the floating-gate technique for nonvolatile storage of data. Avalanche injection of hot electrons through gate oxide from a special injector diode in each bit is used to charge the floating gates. A second injector structure included in each bit permits discharge of the floating gate by avalanche injection of holes through gate oxide. The overall design of the DIFMOS bit is dictated by the physical considerations required for each of the avalanche injector types. The end result is a circuit technology which can provide fully decoded bit-erasable EAROM-type circuits using conventional manufacturing techniques.
NASA Astrophysics Data System (ADS)
Zhao, Jingtao; Zhao, Zhenguo; Chen, Zidong; Lin, Zhaojun; Xu, Fukai
2017-12-01
In this study, we have investigated the electrical properties of the AlGaN/AlN/GaN heterostructure field-effect transistors (HFETs) with floating gate structures using the measured capacitancevoltage (C-V) and current-voltage (I-V) characteristics. It is found that the two-dimensional electron gas (2DEG) density under the central gate cannot be changed by the floating gate structures. However, the floating gate structures can cause the strain variation in the barrier layer, which lead to the non-uniform distribution of the polarization charges, then induce a polarization Coulomb field and scatter the 2DEG. More floating gate structures and closer distance between the floating gates and the central gate will result in stronger scattering effect of the 2DEG.
Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio
2017-06-14
In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 V RMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame.
Iglesias-Rojas, Juan Carlos; Gomez-Castañeda, Felipe; Moreno-Cadenas, Jose Antonio
2017-01-01
In this paper, a Least Mean Square (LMS) programming scheme is used to set the offset voltage of two operational amplifiers that were built using floating-gate transistors, enabling a 0.95 VRMS trimmer-less flame detection sensor. The programming scheme is capable of setting the offset voltage over a wide range of values by means of electron injection. The flame detection sensor consists of two programmable offset operational amplifiers; the first amplifier serves as a 26 μV offset voltage follower, whereas the second amplifier acts as a programmable trimmer-less voltage comparator. Both amplifiers form the proposed sensor, whose principle of functionality is based on the detection of the electrical changes produced by the flame ionization. The experimental results show that it is possible to measure the presence of a flame accurately after programming the amplifiers with a maximum of 35 LMS-algorithm iterations. Current commercial flame detectors are mainly used in absorption refrigerators and large industrial gas heaters, where a high voltage AC source and several mechanical trimmings are used in order to accurately measure the presence of the flame. PMID:28613250
Investigation of field induced trapping on floating gates
NASA Technical Reports Server (NTRS)
Gosney, W. M.
1975-01-01
The development of a technology for building electrically alterable read only memories (EAROMs) or reprogrammable read only memories (RPROMs) using a single level metal gate p channel MOS process with all conventional processing steps is outlined. Nonvolatile storage of data is achieved by the use of charged floating gate electrodes. The floating gates are charged by avalanche injection of hot electrodes through gate oxide, and discharged by avalanche injection of hot holes through gate oxide. Three extra diffusion and patterning steps are all that is required to convert a standard p channel MOS process into a nonvolatile memory process. For identification, this nonvolatile memory technology was given the descriptive acronym DIFMOS which stands for Dual Injector, Floating gate MOS.
Chromophoric dissolved organic matter (CDOM) strongly absorbs solar radiation in the blue-green and serves as the primary attenuator of water column ultraviolet radiation (UV-R). CDOM interferes with remote sensing of ocean chlorophyll and can control UV-R-induced damage to light...
Configurable hardware integrate and fire neurons for sparse approximation.
Shapero, Samuel; Rozell, Christopher; Hasler, Paul
2013-09-01
Sparse approximation is an important optimization problem in signal and image processing applications. A Hopfield-Network-like system of integrate and fire (IF) neurons is proposed as a solution, using the Locally Competitive Algorithm (LCA) to solve an overcomplete L1 sparse approximation problem. A scalable system architecture is described, including IF neurons with a nonlinear firing function, and current-based synapses to provide linear computation. A network of 18 neurons with 12 inputs is implemented on the RASP 2.9v chip, a Field Programmable Analog Array (FPAA) with directly programmable floating gate elements. Said system uses over 1400 floating gates, the largest system programmed on a FPAA to date. The circuit successfully reproduced the outputs of a digital optimization program, converging to within 4.8% RMS, and an objective cost only 1.7% higher on average. The active circuit consumed 559 μA of current at 2.4 V and converges on solutions in 25 μs, with measurement of the converged spike rate taking an additional 1 ms. Extrapolating the scaling trends to a N=1000 node system, the spiking LCA compares favorably with state-of-the-art digital solutions, and analog solutions using a non-spiking approach. Copyright © 2013 Elsevier Ltd. All rights reserved.
Radiation Issues and Applications of Floating Gate Memories
NASA Technical Reports Server (NTRS)
Scheick, L. Z.; Nguyen, D. N.
2000-01-01
The radiation effects that affect various systems that comprise floating gate memories are presented. The wear-out degradation results of unirradiated flash memories are compared to irradiated flash memories. The procedure analyzes the failure to write and erase caused by wear-out and degradation of internal charge pump circuits. A method is described for characterizing the radiation effects of the floating gate itself. The rate dependence, stopping power dependence, SEU susceptibility and applications of floating gate in radiation environment are presented. The ramifications for dosimetry and cell failure are discussed as well as for the long term use aspects of non-volatile memories.
NASA Astrophysics Data System (ADS)
Liu, Chunsen; Yan, Xiao; Song, Xiongfei; Ding, Shijin; Zhang, David Wei; Zhou, Peng
2018-05-01
As conventional circuits based on field-effect transistors are approaching their physical limits due to quantum phenomena, semi-floating gate transistors have emerged as an alternative ultrafast and silicon-compatible technology. Here, we show a quasi-non-volatile memory featuring a semi-floating gate architecture with band-engineered van der Waals heterostructures. This two-dimensional semi-floating gate memory demonstrates 156 times longer refresh time with respect to that of dynamic random access memory and ultrahigh-speed writing operations on nanosecond timescales. The semi-floating gate architecture greatly enhances the writing operation performance and is approximately 106 times faster than other memories based on two-dimensional materials. The demonstrated characteristics suggest that the quasi-non-volatile memory has the potential to bridge the gap between volatile and non-volatile memory technologies and decrease the power consumption required for frequent refresh operations, enabling a high-speed and low-power random access memory.
Ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory
NASA Astrophysics Data System (ADS)
Han, Jinhua; Wang, Wei; Ying, Jun; Xie, Wenfa
2014-01-01
An ambipolar organic thin-film transistor-based nano-floating-gate nonvolatile memory was demonstrated, with discrete distributed gold nanoparticles, tetratetracontane (TTC), pentacene as the floating-gate layer, tunneling layer, and active layer, respectively. The electron traps at the TTC/pentacene interface were significantly suppressed, which resulted in an ambipolar operation in present memory. As both electrons and holes were supplied in the channel and trapped in the floating-gate by programming/erasing operations, respectively, i.e., one type of charge carriers was used to overwrite the other, trapped, one, a large memory window, extending on both sides of the initial threshold voltage, was realized.
NASA Astrophysics Data System (ADS)
Okada, Shuichi; Nakahara, Yoshio; Uno, Kazuyuki; Tanaka, Ichiro
2018-04-01
Pentacene thin-film transistors (TFTs) were fabricated with ultraviolet-light (UV)-cured polysilsesquioxane (PSQ) gate dielectric layers using cross-linker molecules with or without ester groups. To polymerize PSQ without ester groups, thiol-ene reaction was adopted. The TFTs fabricated with PSQ layers comprising ester-free cross-linkers showed a higher carrier mobility than the TFTs with PSQ layers cross-linked with ester groups, which had large electric dipole moments that limited the carrier mobility. It was demonstrated that the thiol-ene reaction is more suitable than the conventional radical reaction for UV-cured PSQ with small dielectric constant.
NASA Astrophysics Data System (ADS)
Qiao, Haijun; Xu, Jingjun; Tomita, Yasuo; Zhu, Dengsong; Fu, Bo; Zhang, Guoquan; Zhang, Guangyin
2007-03-01
We describe the ultraviolet-light one-color photorefraction (UV-OPR) at 351 nm in LiNbO3 crystals with different Mg-doping concentrations and [Li]/[Nb] ratios. It is shown that as the Mg-doping concentration and/or the [Li]/[Nb] ratio increase, the refractive index change and the two-beam coupling gain increase but the response time decreases. It is also shown that the recording sensitivity as large as ∼27 cm/J is obtainable at a recording intensity of ∼1 W/cm2 in near-stoichiometric LiNbO3 doped with 2 mol% Mg. This sensitivity is approximately one order of magnitude higher than those for other LiNbO3 crystals. We also describe the ultraviolet-light-gating two-color photorefraction (UV-TPR) using 365 nm gating and 633 nm recording beams in LiNbO3 crystals with different Mg-doping concentrations and [Li]/[Nb] ratios. It is shown that UV-TPR is only observed in near-stoichiometric crystals and the grating-formation dynamics strongly depend on the Mg concentration.
Benwadih, M; Coppard, R; Bonrad, K; Klyszcz, A; Vuillaume, D
2016-12-21
Amorphous, sol-gel processed, indium gallium zinc oxide (IGZO) transistors on plastic substrate with a printable gate dielectric and an electron mobility of 4.5 cm 2 /(V s), as well as a mobility of 7 cm 2 /(V s) on solid substrate (Si/SiO 2 ) are reported. These performances are obtained using a low temperature pulsed light annealing technique. Ultraviolet (UV) pulsed light system is an innovative technique compared to conventional (furnace or hot-plate) annealing process that we successfully implemented on sol-gel IGZO thin film transistors (TFTs) made on plastic substrate. The photonic annealing treatment has been optimized to obtain IGZO TFTs with significant electrical properties. Organic gate dielectric layers deposited on this pulsed UV light annealed films have also been optimized. This technique is very promising for the development of amorphous IGZO TFTs on plastic substrates.
Nonvolatile memory with Co-SiO2 core-shell nanocrystals as charge storage nodes in floating gate
NASA Astrophysics Data System (ADS)
Liu, Hai; Ferrer, Domingo A.; Ferdousi, Fahmida; Banerjee, Sanjay K.
2009-11-01
In this letter, we reported nanocrystal floating gate memory with Co-SiO2 core-shell nanocrystal charge storage nodes. By using a water-in-oil microemulsion scheme, Co-SiO2 core-shell nanocrystals were synthesized and closely packed to achieve high density matrix in the floating gate without aggregation. The insulator shell also can help to increase the thermal stability of the nanocrystal metal core during the fabrication process to improve memory performance.
All optical programmable logic array (PLA)
NASA Astrophysics Data System (ADS)
Hiluf, Dawit
2018-03-01
A programmable logic array (PLA) is an integrated circuit (IC) logic device that can be reconfigured to implement various kinds of combinational logic circuits. The device has a number of AND and OR gates which are linked together to give output or further combined with more gates or logic circuits. This work presents the realization of PLAs via the physics of a three level system interacting with light. A programmable logic array is designed such that a number of different logical functions can be combined as a sum-of-product or product-of-sum form. We present an all optical PLAs with the aid of laser light and observables of quantum systems, where encoded information can be considered as memory chip. The dynamics of the physical system is investigated using Lie algebra approach.
NASA Astrophysics Data System (ADS)
Faigon, A.; Martinez Vazquez, I.; Carbonetto, S.; García Inza, M.; G
2017-01-01
A floating gate dosimeter was designed and fabricated in a standard CMOS technology. The design guides and characterization are presented. The characterization included the controlled charging by tunneling of the floating gate, and its discharging under irradiation while measuring the transistor drain current whose change is the measure of the absorbed dose. The resolution of the obtained device is close to 1 cGy satisfying the requirements for most radiation therapies dosimetry. Pending statistical proofs, the dosimeter is a potential candidate for wide in-vivo control of radiotherapy treatments.
Park, Jae Hyo; Son, Se Wan; Byun, Chang Woo; Kim, Hyung Yoon; Joo, So Na; Lee, Yong Woo; Yun, Seung Jae; Joo, Seung Ki
2013-10-01
In this work, non-volatile memory thin-film transistor (NVM-TFT) was fabricated by nickel silicide-induced laterally crystallized (SILC) polycrystalline silicon (poly-Si) as the active layer. The nickel seed silicide-induced crystallized (SIC) poly-Si was used as storage layer which is embedded in the gate insulator. The novel unit pixel of active matrix organic light-emitting diode (AMOLED) using NVM-TFT is proposed and investigated the electrical and optical performance. The threshold voltage shift showed 17.2 V and the high reliability of retention characteristic was demonstrated until 10 years. The retention time can modulate the recharge refresh time of the unit pixel of AMOLED up to 5000 sec.
Ming Gu; Chakrabartty, Shantanu
2014-06-01
This paper presents the design of a programmable gain, temperature compensated, current-mode CMOS logarithmic amplifier that can be used for biomedical signal processing. Unlike conventional logarithmic amplifiers that use a transimpedance technique to generate a voltage signal as a logarithmic function of the input current, the proposed approach directly produces a current output as a logarithmic function of the input current. Also, unlike a conventional transimpedance amplifier the gain of the proposed logarithmic amplifier can be programmed using floating-gate trimming circuits. The synthesis of the proposed circuit is based on the Hart's extended translinear principle which involves embedding a floating-voltage source and a linear resistive element within a translinear loop. Temperature compensation is then achieved using a translinear-based resistive cancelation technique. Measured results from prototypes fabricated in a 0.5 μm CMOS process show that the amplifier has an input dynamic range of 120 dB and a temperature sensitivity of 230 ppm/°C (27 °C- 57°C), while consuming less than 100 nW of power.
NASA Astrophysics Data System (ADS)
Itoh, Takuro; Toyota, Taro; Higuchi, Hiroyuki; Matsushita, Michio M.; Suzuki, Kentaro; Sugawara, Tadashi
2017-03-01
A tetracyanoquaterthienoquinoid (TCT4Q)-based field effect transistor is characterized by the ambipolar transfer characteristics and the facile shift of the threshold voltage induced by the bias stress. The trapping and detrapping kinetics of charge carriers was investigated in detail by the temperature dependence of the decay of source-drain current (ISD). We found a repeatable formation of a molecular floating gate is derived from a 'charge carrier-and-gate' cycle comprising four stages, trapping of mobile carriers, formation of a floating gate, induction of oppositely charged mobile carriers, and recombination between mobile and trapped carriers to restore the initial state.
NASA Astrophysics Data System (ADS)
Cui, Ze-Qun; Wang, Shun; Chen, Jian-Mei; Gao, Xu; Dong, Bin; Chi, Li-Feng; Wang, Sui-Dong
2015-03-01
Electron and hole trapping into the nano-floating-gate of a pentacene-based organic field-effect transistor nonvolatile memory is directly probed by Kelvin probe force microscopy. The probing is straightforward and non-destructive. The measured surface potential change can quantitatively profile the charge trapping, and the surface characterization results are in good accord with the corresponding device behavior. Both electrons and holes can be trapped into the nano-floating-gate, with a preference of electron trapping than hole trapping. The trapped charge quantity has an approximately linear relation with the programming/erasing gate bias, indicating that the charge trapping in the device is a field-controlled process.
Push the flash floating gate memories toward the future low energy application
NASA Astrophysics Data System (ADS)
Della Marca, V.; Just, G.; Regnier, A.; Ogier, J.-L.; Simola, R.; Niel, S.; Postel-Pellerin, J.; Lalande, F.; Masoero, L.; Molas, G.
2013-01-01
In this paper the energy consumption of flash floating gate cell, during a channel hot electron operation, is investigated. We characterize the device using different ramp and box pulses on control gate, to find the best solution to have low energy consumption and good cell performances. We use a new dynamic method to measure the drain current absorption in order to evaluate the impact of different bias conditions, and to study the cell behavior. The programming window and the energy consumption are considered as fundamental parameters. Using this dynamic technique, three zones of work are found; it is possible to optimize the drain voltage during the programming operation to minimize the energy consumption. Moreover, the cell's performances are improved using the CHISEL effect, with a reverse body bias. After the study concerning the programming pulses adjusting, we show the results obtained by increasing the channel doping dose parameter. Considering a channel hot electron programming operation, it is important to focus our attention on the bitline leakage consumption contribution. We measured it for the unselected bitline cells, and we show the effects of the lightly doped drain implantation energy on the leakage current. In this way the impact of gate induced drain leakage in band-to-band tunneling regime decreases, improving the cell's performances in a memory array.
Floating gate transistors as biosensors (Conference Presentation)
NASA Astrophysics Data System (ADS)
Frisbie, C. Daniel
2016-11-01
Electrolyte gated transistors (EGTs) are a sub-class of thin film transistors that are extremely promising for biological sensing applications. These devices employ a solid electrolyte as the gate insulator; the very large capacitance of the electrolyte results in low voltage operation and high transconductance or gain. This talk will describe the fabrication of floating gate EGTs and their use as ricin sensors. The critical performance metrics for EGTs compared with other types of TFTs will also be reviewed.
A simple laser locking system based on a field-programmable gate array.
Jørgensen, N B; Birkmose, D; Trelborg, K; Wacker, L; Winter, N; Hilliard, A J; Bason, M G; Arlt, J J
2016-07-01
Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The locking system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.
A simple laser locking system based on a field-programmable gate array
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jørgensen, N. B.; Birkmose, D.; Trelborg, K.
Frequency stabilization of laser light is crucial in both scientific and industrial applications. Technological developments now allow analog laser stabilization systems to be replaced with digital electronics such as field-programmable gate arrays, which have recently been utilized to develop such locking systems. We have developed a frequency stabilization system based on a field-programmable gate array, with emphasis on hardware simplicity, which offers a user-friendly alternative to commercial and previous home-built solutions. Frequency modulation, lock-in detection, and a proportional-integral-derivative controller are programmed on the field-programmable gate array and only minimal additional components are required to frequency stabilize a laser. The lockingmore » system is administered from a host-computer which provides comprehensive, long-distance control through a versatile interface. Various measurements were performed to characterize the system. The linewidth of the locked laser was measured to be 0.7 ± 0.1 MHz with a settling time of 10 ms. The system can thus fully match laser systems currently in use for atom trapping and cooling applications.« less
Dual-Gate p-GaN Gate High Electron Mobility Transistors for Steep Subthreshold Slope.
Bae, Jong-Ho; Lee, Jong-Ho
2016-05-01
A steep subthreshold slope characteristic is achieved through p-GaN gate HEMT with dual-gate structure. Obtained subthreshold slope is less than 120 μV/dec. Based on the measured and simulated data obtained from single-gate device, breakdown of parasitic floating-base bipolar transistor and floating gate charged with holes are responsible to increase abruptly in drain current. In the dual-gate device, on-current degrades with high temperature but subthreshold slope is not changed. To observe the switching speed of dual-gate device and transient response of drain current are measured. According to the transient responses of drain current, switching speed of the dual-gate device is about 10(-5) sec.
NASA Astrophysics Data System (ADS)
Tanaka, Kiyotsugu; Choi, Yong Joon; Moriwaki, Yu; Hizawa, Takeshi; Iwata, Tatsuya; Dasai, Fumihiro; Kimura, Yasuyuki; Takahashi, Kazuhiro; Sawada, Kazuaki
2017-04-01
We developed a low-detection-limit filter-free fluorescence sensor by a charge accumulation technique. For charge accumulation, a floating diffusion amplifier (FDA), which included a floating diffusion capacitor, a transfer gate, and a source follower circuit, was used. To integrate CMOS circuits with the filter-free fluorescence sensor, we adopted a triple-well process to isolate transistors from the sensor on a single chip. We detected 0.1 nW fluorescence under the illumination of excitation light by 1.5 ms accumulation, which was one order of magnitude greater than that of a previous current detection sensor.
A Low-Cost CMOS Programmable Temperature Switch
Li, Yunlong; Wu, Nanjian
2008-01-01
A novel uncalibrated CMOS programmable temperature switch with high temperature accuracy is presented. Its threshold temperature Tth can be programmed by adjusting the ratios of width and length of the transistors. The operating principles of the temperature switch circuit is theoretically explained. A floating gate neural MOS circuit is designed to compensate automatically the threshold temperature Tth variation that results form the process tolerance. The switch circuit is implemented in a standard 0.35 μm CMOS process. The temperature switch can be programmed to perform the switch operation at 16 different threshold temperature Tths from 45—120°C with a 5°C increment. The measurement shows a good consistency in the threshold temperatures. The chip core area is 0.04 mm2 and power consumption is 3.1 μA at 3.3V power supply. The advantages of the temperature switch are low power consumption, the programmable threshold temperature and the controllable hysteresis. PMID:27879871
A DNAzyme-mediated logic gate for programming molecular capture and release on DNA origami.
Li, Feiran; Chen, Haorong; Pan, Jing; Cha, Tae-Gon; Medintz, Igor L; Choi, Jong Hyun
2016-06-28
Here we design a DNA origami-based site-specific molecular capture and release platform operated by a DNAzyme-mediated logic gate process. We show the programmability and versatility of this platform with small molecules, proteins, and nanoparticles, which may also be controlled by external light signals.
NASA Technical Reports Server (NTRS)
Robinson, Paul A., Jr.
1988-01-01
Charged-particle probe compact and consumes little power. Proposed modification enables metal oxide/semiconductor field-effect transistor (MOSFET) to act as detector of static electric charges or energetic charged particles. Thickened gate insulation acts as control structure. During measurements metal gate allowed to "float" to potential of charge accumulated in insulation. Stack of modified MOSFET'S constitutes detector of energetic charged particles. Each gate "floats" to potential induced by charged-particle beam penetrating its layer.
NASA Astrophysics Data System (ADS)
Palade, C.; Lepadatu, A. M.; Slav, A.; Lazanu, S.; Teodorescu, V. S.; Stoica, T.; Ciurea, M. L.
2018-01-01
Trilayer memory capacitors with Ge nanocrystals (NCs) floating gate in HfO2 were obtained by magnetron sputtering deposition on p-type Si substrate followed by rapid thermal annealing at relatively low temperature of 600 °C. The frequency dispersion of capacitance and resistance was measured in accumulation regime of Al/HfO2 gate oxide/Ge NCs in HfO2 floating gate/HfO2 tunnel oxide/SiOx/p-Si/Al memory capacitors. For simulation of the frequency dispersion a complex circuit model was used considering an equivalent parallel RC circuit for each layer of the trilayer structure. A series resistance due to metallic contacts and Si substrate was necessary to be included in the model. A very good fit to the experimental data was obtained and the parameters of each layer in the memory capacitor, i.e. capacitances and resistances were determined and in turn the intrinsic material parameters, i.e. dielectric constants and resistivities of layers were evaluated. The results are very important for the study and optimization of the hysteresis behaviour of floating gate memories based on NCs embedded in oxide.
95. Photocopied August 1978. CRIBS BEING FLOATED INTO PLACE FOR ...
95. Photocopied August 1978. CRIBS BEING FLOATED INTO PLACE FOR THE CONSTRUCTION OF THE SECOND SET (NOS. 13-16) OF COMPENSATING GATES. NOTE THE ORIGINAL FOUR GATES IN THE BACKGROUND, MAY 14, 1915. (587) - Michigan Lake Superior Power Company, Portage Street, Sault Ste. Marie, Chippewa County, MI
20-GFLOPS QR processor on a Xilinx Virtex-E FPGA
NASA Astrophysics Data System (ADS)
Walke, Richard L.; Smith, Robert W. M.; Lightbody, Gaye
2000-11-01
Adaptive beamforming can play an important role in sensor array systems in countering directional interference. In high-sample rate systems, such as radar and comms, the calculation of adaptive weights is a very computational task that requires highly parallel solutions. For systems where low power consumption and volume are important the only viable implementation is as an Application Specific Integrated Circuit (ASIC). However, the rapid advancement of Field Programmable Gate Array (FPGA) technology is enabling highly credible re-programmable solutions. In this paper we present the implementation of a scalable linear array processor for weight calculation using QR decomposition. We employ floating-point arithmetic with mantissa size optimized to the target application to minimize component size, and implement them as relationally placed macros (RPMs) on Xilinx Virtex FPGAs to achieve predictable dense layout and high-speed operation. We present results that show that 20GFLOPS of sustained computation on a single XCV3200E-8 Virtex-E FPGA is possible. We also describe the parameterized implementation of the floating-point operators and QR-processor, and the design methodology that enables us to rapidly generate complex FPGA implementations using the industry standard hardware description language VHDL.
Solution processed molecular floating gate for flexible flash memories
NASA Astrophysics Data System (ADS)
Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.
2013-10-01
Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices.
Floating Gate CMOS Dosimeter With Frequency Output
NASA Astrophysics Data System (ADS)
Garcia-Moreno, E.; Isern, E.; Roca, M.; Picos, R.; Font, J.; Cesari, J.; Pineda, A.
2012-04-01
This paper presents a gamma radiation dosimeter based on a floating gate sensor. The sensor is coupled with a signal processing circuitry, which furnishes a square wave output signal, the frequency of which depends on the total dose. Like any other floating gate dosimeter, it exhibits zero bias operation and reprogramming capabilities. The dosimeter has been designed in a standard 0.6 m CMOS technology. The whole dosimeter occupies a silicon area of 450 m250 m. The initial sensitivity to a radiation dose is Hz/rad, and to temperature and supply voltage is kHz/°C and 0.067 kHz/mV, respectively. The lowest detectable dose is less than 1 rad.
Solution processed molecular floating gate for flexible flash memories
Zhou, Ye; Han, Su-Ting; Yan, Yan; Huang, Long-Biao; Zhou, Li; Huang, Jing; Roy, V. A. L.
2013-01-01
Solution processed fullerene (C60) molecular floating gate layer has been employed in low voltage nonvolatile memory device on flexible substrates. We systematically studied the charge trapping mechanism of the fullerene floating gate for both p-type pentacene and n-type copper hexadecafluorophthalocyanine (F16CuPc) semiconductor in a transistor based flash memory architecture. The devices based on pentacene as semiconductor exhibited both hole and electron trapping ability, whereas devices with F16CuPc trapped electrons alone due to abundant electron density. All the devices exhibited large memory window, long charge retention time, good endurance property and excellent flexibility. The obtained results have great potential for application in large area flexible electronic devices. PMID:24172758
A ZnO nanowire-based photo-inverter with pulse-induced fast recovery.
Raza, Syed Raza Ali; Lee, Young Tack; Hosseini Shokouh, Seyed Hossein; Ha, Ryong; Choi, Heon-Jin; Im, Seongil
2013-11-21
We demonstrate a fast response photo-inverter comprised of one transparent gated ZnO nanowire field-effect transistor (FET) and one opaque FET respectively as the driver and load. Under ultraviolet (UV) light the transfer curve of the transparent gate FET shifts to the negative side and so does the voltage transfer curve (VTC) of the inverter. After termination of UV exposure the recovery of photo-induced current takes a long time in general. This persistent photoconductivity (PPC) is due to hole trapping on the surface of ZnO NWs. Here, we used a positive voltage short pulse after UV exposure, for the first time resolving the PPC issue in nanowire-based photo-detectors by accumulating electrons at the ZnO/dielectric interface. We found that a pulse duration as small as 200 ns was sufficient to reach a full recovery to the dark state from the UV induced state, realizing a fast UV detector with a voltage output.
NASA Astrophysics Data System (ADS)
Wang, Xingfu; Zhang, Yong; Chen, Xinman; He, Miao; Liu, Chao; Yin, Yian; Zou, Xianshao; Li, Shuti
2014-09-01
Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage.Nonpolar a-axial GaN nanowire (NW) was first used to construct the MSM (metal-semiconductor-metal) symmetrical Schottky contact device for application as visible-blind ultraviolet (UV) detector. Without any surface or composition modifications, the fabricated device demonstrated a superior performance through a combination of its high sensitivity (up to 104 A W-1) and EQE value (up to 105), as well as ultrafast (<26 ms) response speed, which indicates that a balance between the photocurrent gain and the response speed has been achieved. Based on its excellent photoresponse performance, an optical logic AND gate and OR gate have been demonstrated for performing photo-electronic coupled logic devices by further integrating the fabricated GaN NW detectors, which logically convert optical signals to electrical signals in real time. These results indicate the possibility of using a nonpolar a-axial GaN NW not only as a high performance UV detector, but also as a stable optical logic device, both in light-wave communications and for future memory storage. Electronic supplementary information (ESI) available: Details of the EDS and SAED data, supplementary results of the UV detector, and the discussion of the transport properties of the MSM Schottky contact devices. See DOI: 10.1039/c4nr03581j
Modeling of Sonos Memory Cell Erase Cycle
NASA Technical Reports Server (NTRS)
Phillips, Thomas A.; MacLeond, Todd C.; Ho, Fat D.
2010-01-01
Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile semiconductor memories (NVSMS) have many advantages. These memories are electrically erasable programmable read-only memories (EEPROMs). They utilize low programming voltages, endure extended erase/write cycles, are inherently resistant to radiation, and are compatible with high-density scaled CMOS for low power, portable electronics. The SONOS memory cell erase cycle was investigated using a nonquasi-static (NQS) MOSFET model. The SONOS floating gate charge and voltage, tunneling current, threshold voltage, and drain current were characterized during an erase cycle. Comparisons were made between the model predictions and experimental device data.
NASA Technical Reports Server (NTRS)
Edmonds, L. D.
2016-01-01
Since advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.
NASA Technical Reports Server (NTRS)
Edmonds, L. D.
2016-01-01
Because advancing technology has been producing smaller structures in electronic circuits, the floating gates in modern flash memories are becoming susceptible to prompt charge loss from ionizing radiation environments found in space. A method for estimating the risk of a charge-loss event is given.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sharp, H.E.; Lin, J.W. III; Macha, E.S.
1984-12-04
A borehole survey instrument is provided having a meniscus type floating compass member with indicia thereon for indicating azimuth and inclination. A light source is disposed below the indicia for illuminating the indicia upward through the liquid through which the meniscus type floating compass member floats. A lens system is provided for focusing the image of the illuminated compass member upon a film disposed below the compass member. This arrangement permits the centering post for the compass member to be of minimum diameter consistent with rigidity requirements and permits a high angle compass member to indicate angles of inclination approachingmore » ninety degrees. A multiple light bulb light source is utilized and each light bulb is mounted in a manner which permits a single light bulb to illuminate the entire compass member. A hand-held programming and diagnostic unit is provided which may be momentarily electrically mated with the borehole survey tool to input a programmed timed delay and diagnostically test both the condition of the light bulbs utilized as the illumination source and the state of the batteries within the instrument. This hand-held programmable unit eliminates all the mechanical programming switches and permits the instrument to be completely sealed from the pressure, fluids and contaminants normally found in a well bore.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Wei, E-mail: wwei99@jlu.edu.cn; Han, Jinhua; Ying, Jun
2014-09-22
Two types of floating-gate based organic thin-film transistor nonvolatile memories (FG-OTFT-NVMs) were demonstrated, with poly(methyl methacrylate co glycidyl methacrylate) (P(MMA-GMA)) and tetratetracontane (TTC) as the tunneling layer, respectively. Their device performances were measured and compared. In the memory with a P(MMA-GMA) tunneling layer, typical unipolar hole transport was obtained with a relatively small mobility of 0.16 cm{sup 2}/V s. The unidirectional shift of turn-on voltage (V{sub on}) due to only holes trapped/detrapped in/from the floating gate resulted in a small memory window of 12.5 V at programming/erasing voltages (V{sub P}/V{sub E}) of ±100 V and a nonzero reading voltage. Benefited from the well-ordered moleculemore » orientation and the trap-free surface of TTC layer, a considerably high hole mobility of 1.7 cm{sup 2}/V s and a visible feature of electrons accumulated in channel and trapped in floating-gate were achieved in the memory with a TTC tunneling layer. High hole mobility resulted in a high on current and a large memory on/off ratio of 600 at the V{sub P}/V{sub E} of ±100 V. Both holes and electrons were injected into floating-gate and overwritten each other, which resulted in a bidirectional V{sub on} shift. As a result, an enlarged memory window of 28.6 V at the V{sub P}/V{sub E} of ±100 V and a zero reading voltage were achieved. Based on our results, a strategy is proposed to optimize FG-OTFT-NVMs by choosing a right tunneling layer to improve the majority carrier mobility and realize ambipolar carriers injecting and trapping in the floating-gate.« less
NASA Astrophysics Data System (ADS)
Wang, Han; Gou, Chao; Luo, Kai
2017-04-01
This paper presents a fully on-chip NMOS low-dropout regulator (LDO) for portable applications with quasi floating gate pass element and fast transient response. The quasi floating gate structure makes the gate of the NMOS transistor only periodically charged or refreshed by the charge pump, which allows the charge pump to be a small economical circuit with small silicon area. In addition, a variable reference circuit is introduced enlarging the dynamic range of error amplifier during load transient. The proposed LDO has been implemented in a 0.35 μm BCD process. From experimental results, the regulator can operate with a minimum dropout voltage of 250 mV at a maximum 1 A load and {I}{{Q}} of 395 μA. Under full-range load current step, the voltage undershoot and overshoot of the proposed LDO are reduced to 50 and 26 mV, respectively.
CMOS Active-Pixel Image Sensor With Simple Floating Gates
NASA Technical Reports Server (NTRS)
Fossum, Eric R.; Nakamura, Junichi; Kemeny, Sabrina E.
1996-01-01
Experimental complementary metal-oxide/semiconductor (CMOS) active-pixel image sensor integrated circuit features simple floating-gate structure, with metal-oxide/semiconductor field-effect transistor (MOSFET) as active circuit element in each pixel. Provides flexibility of readout modes, no kTC noise, and relatively simple structure suitable for high-density arrays. Features desirable for "smart sensor" applications.
Physical implication of transition voltage in organic nano-floating-gate nonvolatile memories
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Shun; Gao, Xu, E-mail: wangsd@suda.edu.cn, E-mail: gaoxu@suda.edu.cn; Zhong, Ya-Nan
High-performance pentacene-based organic field-effect transistor nonvolatile memories, using polystyrene as a tunneling dielectric and Au nanoparticles as a nano-floating-gate, show parallelogram-like transfer characteristics with a featured transition point. The transition voltage at the transition point corresponds to a threshold electric field in the tunneling dielectric, over which stored electrons in the nano-floating-gate will start to leak out. The transition voltage can be modulated depending on the bias configuration and device structure. For p-type active layers, optimized transition voltage should be on the negative side of but close to the reading voltage, which can simultaneously achieve a high ON/OFF ratio andmore » good memory retention.« less
Materials and methods for the preparation of nanocomposites
Nag, Angshuman; Talapin, Dmitri V.
2018-01-30
Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a method for making the same in a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, phase change layers, and sensor devices.
Pérez Suárez, Santiago T.; Travieso González, Carlos M.; Alonso Hernández, Jesús B.
2013-01-01
This article presents a design methodology for designing an artificial neural network as an equalizer for a binary signal. Firstly, the system is modelled in floating point format using Matlab. Afterward, the design is described for a Field Programmable Gate Array (FPGA) using fixed point format. The FPGA design is based on the System Generator from Xilinx, which is a design tool over Simulink of Matlab. System Generator allows one to design in a fast and flexible way. It uses low level details of the circuits and the functionality of the system can be fully tested. System Generator can be used to check the architecture and to analyse the effect of the number of bits on the system performance. Finally the System Generator design is compiled for the Xilinx Integrated System Environment (ISE) and the system is described using a hardware description language. In ISE the circuits are managed with high level details and physical performances are obtained. In the Conclusions section, some modifications are proposed to improve the methodology and to ensure portability across FPGA manufacturers.
NASA Astrophysics Data System (ADS)
Mondal, Sandip
2018-04-01
This experiment demonstrates the electrical behaviors of fully solution processed HfO2(MOS) in presence of different optical illumination. The capacitance voltage measurement was performed at frequency of 100 kHz with a DC gate sweep voltage of ±5V (with additional AC voltage of 100mV) in presence of deep UV (wavelength of 365nm with power of 25W) as well as white light (20W). It is found that there is a large shift in flatband voltage of 120mV due presence of white light during the CV measurement. However there is negligible change in flatband voltage (30mV) has been observed due to illumination of deep UV light.
NASA Astrophysics Data System (ADS)
Ryu, Seong-Wan; Han, Jin-Woo; Kim, Chung-Jin; Kim, Sungho; Choi, Yang-Kyu
2009-03-01
This paper describes a unified memory (URAM) that utilizes a nanocrystal SOI MOSFET for multi-functional applications of both nonvolatile memory (NVM) and capacitorless 1T-DRAM. By using a discrete storage node (Ag nanocrystal) as the floating gate of the NVM, high defect immunity and 2-bit/cell operation were achieved. The embedded nanocrystal NVM also showed 1T-DRAM operation (program/erase time = 100 ns) characteristics, which were realized by storing holes in the floating body of the SOI MOSFET, without requiring an external capacitor. Three-bit/cell operation was accomplished for different applications - 2-bits for nonvolatility and 1-bit for fast operation.
Floating-gate memory based on an organic metal-insulator-semiconductor capacitor
NASA Astrophysics Data System (ADS)
William, S.; Mabrook, M. F.; Taylor, D. M.
2009-08-01
A floating gate memory element is described which incorporates an evaporated gold film embedded in the gate dielectric of a metal-insulator-semiconductor capacitor based on poly(3-hexylthiophene). On exceeding a critical amplitude in the voltage sweep, hysteresis is observed in the capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the device. The anticlockwise hysteresis in C-V is consistent with strong electron trapping during the positive cycle but little hole trapping during the negative cycle. We argue that the clockwise hysteresis observed in the negative cycle of the I-V plot, arises from leakage of trapped holes through the underlying insulator to the control gate.
Cheng, Lei; Jiang, Yao; Yan, Ni; Shan, Shu-Feng; Liu, Xiao-Qin; Sun, Lin-Bing
2016-09-07
Selective adsorption and efficient regeneration are two crucial issues for adsorption processes; unfortunately, only one of them instead of both is favored by traditional adsorbents with fixed pore orifices. Herein, we fabricated a new generation of smart adsorbents through grafting photoresponsive molecules, namely, 4-(3-triethoxysilylpropyl-ureido)azobenzene (AB-TPI), onto pore orifices of the support mesoporous silica. The azobenzene (AB) derivatives serve as the molecular gates of mesopores and are reversibly opened and closed upon light irradiation. Irradiation with visible light (450 nm) causes AB molecules to isomerize from cis to trans configuration, and the molecular gates are closed. It is easy for smaller adsorbates to enter while difficult for the larger ones, and the selective adsorption is consequently facilitated. Upon irradiation with UV light (365 nm), the AB molecules are transformed from trans to cis isomers, promoting the desorption of adsorbates due to the opened molecular gates. The present smart adsorbents can consequently benefit not only selective adsorption but also efficient desorption, which are exceedingly desirable for adsorptive separation but impossible for traditional adsorbents with fixed pore orifices.
Single layer of Ge quantum dots in HfO2 for floating gate memory capacitors.
Lepadatu, A M; Palade, C; Slav, A; Maraloiu, A V; Lazanu, S; Stoica, T; Logofatu, C; Teodorescu, V S; Ciurea, M L
2017-04-28
High performance trilayer memory capacitors with a floating gate of a single layer of Ge quantum dots (QDs) in HfO 2 were fabricated using magnetron sputtering followed by rapid thermal annealing (RTA). The layer sequence of the capacitors is gate HfO 2 /floating gate of single layer of Ge QDs in HfO 2 /tunnel HfO 2 /p-Si wafers. Both Ge and HfO 2 are nanostructured by RTA at moderate temperatures of 600-700 °C. By nanostructuring at 600 °C, the formation of a single layer of well separated Ge QDs with diameters of 2-3 nm at a density of 4-5 × 10 15 m -2 is achieved in the floating gate (intermediate layer). The Ge QDs inside the intermediate layer are arranged in a single layer and are separated from each other by HfO 2 nanocrystals (NCs) about 8 nm in diameter with a tetragonal/orthorhombic structure. The Ge QDs in the single layer are located at the crossing of the HfO 2 NCs boundaries. In the intermediate layer, besides Ge QDs, a part of the Ge atoms is segregated by RTA at the HfO 2 NCs boundaries, while another part of the Ge atoms is present inside the HfO 2 lattice stabilizing the tetragonal/orthorhombic structure. The fabricated capacitors show a memory window of 3.8 ± 0.5 V and a capacitance-time characteristic with 14% capacitance decay in the first 3000-4000 s followed by a very slow capacitance decrease extrapolated to 50% after 10 years. This high performance is mainly due to the floating gate of a single layer of well separated Ge QDs in HfO 2 , distanced from the Si substrate by the tunnel oxide layer with a precise thickness.
A Real-Time Marker-Based Visual Sensor Based on a FPGA and a Soft Core Processor
Tayara, Hilal; Ham, Woonchul; Chong, Kil To
2016-01-01
This paper introduces a real-time marker-based visual sensor architecture for mobile robot localization and navigation. A hardware acceleration architecture for post video processing system was implemented on a field-programmable gate array (FPGA). The pose calculation algorithm was implemented in a System on Chip (SoC) with an Altera Nios II soft-core processor. For every frame, single pass image segmentation and Feature Accelerated Segment Test (FAST) corner detection were used for extracting the predefined markers with known geometries in FPGA. Coplanar PosIT algorithm was implemented on the Nios II soft-core processor supplied with floating point hardware for accelerating floating point operations. Trigonometric functions have been approximated using Taylor series and cubic approximation using Lagrange polynomials. Inverse square root method has been implemented for approximating square root computations. Real time results have been achieved and pixel streams have been processed on the fly without any need to buffer the input frame for further implementation. PMID:27983714
A Real-Time Marker-Based Visual Sensor Based on a FPGA and a Soft Core Processor.
Tayara, Hilal; Ham, Woonchul; Chong, Kil To
2016-12-15
This paper introduces a real-time marker-based visual sensor architecture for mobile robot localization and navigation. A hardware acceleration architecture for post video processing system was implemented on a field-programmable gate array (FPGA). The pose calculation algorithm was implemented in a System on Chip (SoC) with an Altera Nios II soft-core processor. For every frame, single pass image segmentation and Feature Accelerated Segment Test (FAST) corner detection were used for extracting the predefined markers with known geometries in FPGA. Coplanar PosIT algorithm was implemented on the Nios II soft-core processor supplied with floating point hardware for accelerating floating point operations. Trigonometric functions have been approximated using Taylor series and cubic approximation using Lagrange polynomials. Inverse square root method has been implemented for approximating square root computations. Real time results have been achieved and pixel streams have been processed on the fly without any need to buffer the input frame for further implementation.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jin, Zheming; Yoshii, Kazutomo; Finkel, Hal
Open Computing Language (OpenCL) is a high-level language that enables software programmers to explore Field Programmable Gate Arrays (FPGAs) for application acceleration. The Intel FPGA software development kit (SDK) for OpenCL allows a user to specify applications at a high level and explore the performance of low-level hardware acceleration. In this report, we present the FPGA performance and power consumption results of the single-precision floating-point vector add OpenCL kernel using the Intel FPGA SDK for OpenCL on the Nallatech 385A FPGA board. The board features an Arria 10 FPGA. We evaluate the FPGA implementations using the compute unit duplication andmore » kernel vectorization optimization techniques. On the Nallatech 385A FPGA board, the maximum compute kernel bandwidth we achieve is 25.8 GB/s, approximately 76% of the peak memory bandwidth. The power consumption of the FPGA device when running the kernels ranges from 29W to 42W.« less
Takeda, Shuntaro; Furusawa, Akira
2017-09-22
We propose a scalable scheme for optical quantum computing using measurement-induced continuous-variable quantum gates in a loop-based architecture. Here, time-bin-encoded quantum information in a single spatial mode is deterministically processed in a nested loop by an electrically programmable gate sequence. This architecture can process any input state and an arbitrary number of modes with almost minimum resources, and offers a universal gate set for both qubits and continuous variables. Furthermore, quantum computing can be performed fault tolerantly by a known scheme for encoding a qubit in an infinite-dimensional Hilbert space of a single light mode.
NASA Astrophysics Data System (ADS)
Takeda, Shuntaro; Furusawa, Akira
2017-09-01
We propose a scalable scheme for optical quantum computing using measurement-induced continuous-variable quantum gates in a loop-based architecture. Here, time-bin-encoded quantum information in a single spatial mode is deterministically processed in a nested loop by an electrically programmable gate sequence. This architecture can process any input state and an arbitrary number of modes with almost minimum resources, and offers a universal gate set for both qubits and continuous variables. Furthermore, quantum computing can be performed fault tolerantly by a known scheme for encoding a qubit in an infinite-dimensional Hilbert space of a single light mode.
Programmable bioelectronics in a stimuli-encoded 3D graphene interface
NASA Astrophysics Data System (ADS)
Parlak, Onur; Beyazit, Selim; Tse-Sum-Bui, Bernadette; Haupt, Karsten; Turner, Anthony P. F.; Tiwari, Ashutosh
2016-05-01
The ability to program and mimic the dynamic microenvironment of living organisms is a crucial step towards the engineering of advanced bioelectronics. Here, we report for the first time a design for programmable bioelectronics, with `built-in' switchable and tunable bio-catalytic performance that responds simultaneously to appropriate stimuli. The designed bio-electrodes comprise light and temperature responsive compartments, which allow the building of Boolean logic gates (i.e. ``OR'' and ``AND'') based on enzymatic communications to deliver logic operations.The ability to program and mimic the dynamic microenvironment of living organisms is a crucial step towards the engineering of advanced bioelectronics. Here, we report for the first time a design for programmable bioelectronics, with `built-in' switchable and tunable bio-catalytic performance that responds simultaneously to appropriate stimuli. The designed bio-electrodes comprise light and temperature responsive compartments, which allow the building of Boolean logic gates (i.e. ``OR'' and ``AND'') based on enzymatic communications to deliver logic operations. Electronic supplementary information (ESI) available. See DOI: 10.1039/c6nr02355j
Multiplexed charge-locking device for large arrays of quantum devices
NASA Astrophysics Data System (ADS)
Puddy, R. K.; Smith, L. W.; Al-Taie, H.; Chong, C. H.; Farrer, I.; Griffiths, J. P.; Ritchie, D. A.; Kelly, M. J.; Pepper, M.; Smith, C. G.
2015-10-01
We present a method of forming and controlling large arrays of gate-defined quantum devices. The method uses an on-chip, multiplexed charge-locking system and helps to overcome the restraints imposed by the number of wires available in cryostat measurement systems. The device architecture that we describe here utilises a multiplexer-type scheme to lock charge onto gate electrodes. The design allows access to and control of gates whose total number exceeds that of the available electrical contacts and enables the formation, modulation and measurement of large arrays of quantum devices. We fabricate such devices on n-type GaAs/AlGaAs substrates and investigate the stability of the charge locked on to the gates. Proof-of-concept is shown by measurement of the Coulomb blockade peaks of a single quantum dot formed by a floating gate in the device. The floating gate is seen to drift by approximately one Coulomb oscillation per hour.
MemFlash device: floating gate transistors as memristive devices for neuromorphic computing
NASA Astrophysics Data System (ADS)
Riggert, C.; Ziegler, M.; Schroeder, D.; Krautschneider, W. H.; Kohlstedt, H.
2014-10-01
Memristive devices are promising candidates for future non-volatile memory applications and mixed-signal circuits. In the field of neuromorphic engineering these devices are especially interesting to emulate neuronal functionality. Therefore, new materials and material combinations are currently investigated, which are often not compatible with Si-technology processes. The underlying mechanisms of the device often remain unclear and are paired with low device endurance and yield. These facts define the current most challenging development tasks towards a reliable memristive device technology. In this respect, the MemFlash concept is of particular interest. A MemFlash device results from a diode configuration wiring scheme of a floating gate transistor, which enables the persistent device resistance to be varied according to the history of the charge flow through the device. In this study, we investigate the scaling conditions of the floating gate oxide thickness with respect to possible applications in the field of neuromorphic engineering. We show that MemFlash cells exhibit essential features with respect to neuromorphic applications. In particular, cells with thin floating gate oxides show a limited synaptic weight growth together with low energy dissipation. MemFlash cells present an attractive alternative for state-of-art memresitive devices. The emulation of associative learning is discussed by implementing a single MemFlash cell in an analogue circuit.
Using a Floating-Gate MOS Transistor as a Transducer in a MEMS Gas Sensing System
Barranca, Mario Alfredo Reyes; Mendoza-Acevedo, Salvador; Flores-Nava, Luis M.; Avila-García, Alejandro; Vazquez-Acosta, E. N.; Moreno-Cadenas, José Antonio; Casados-Cruz, Gaspar
2010-01-01
Floating-gate MOS transistors have been widely used in diverse analog and digital applications. One of these is as a charge sensitive device in sensors for pH measurement in solutions or using gates with metals like Pd or Pt for hydrogen sensing. Efforts are being made to monolithically integrate sensors together with controlling and signal processing electronics using standard technologies. This can be achieved with the demonstrated compatibility between available CMOS technology and MEMS technology. In this paper an in-depth analysis is done regarding the reliability of floating-gate MOS transistors when charge produced by a chemical reaction between metallic oxide thin films with either reducing or oxidizing gases is present. These chemical reactions need temperatures around 200 °C or higher to take place, so thermal insulation of the sensing area must be assured for appropriate operation of the electronics at room temperature. The operation principle of the proposal here presented is confirmed by connecting the gate of a conventional MOS transistor in series with a Fe2O3 layer. It is shown that an electrochemical potential is present on the ferrite layer when reacting with propane. PMID:22163478
Materials and methods for the preparation of nanocomposites
Talapin, Dmitri V.; Kovalenko, Maksym V.; Lee, Jong-Soo; Jiang, Chengyang
2016-05-24
Disclosed herein is an isolable colloidal particle comprising a nanoparticle and an inorganic capping agent bound to the surface of the nanoparticle, a solution of the same, a method for making the same from a biphasic solvent mixture, and the formation of structures and solids from the isolable colloidal particle. The process can yield photovoltaic cells, piezoelectric crystals, thermoelectric layers, optoelectronic layers, light emitting diodes, ferroelectric layers, thin film transistors, floating gate memory devices, imaging devices, phase change layers, and sensor devices.
NASA Astrophysics Data System (ADS)
Hu, Quanli; Ha, Sang-Hyub; Lee, Hyun Ho; Yoon, Tae-Sik
2011-12-01
A nanocrystal (NC) floating gate memory with solution-processed indium-zinc-tin-oxide (IZTO) channel and silver (Ag) NCs embedded in thin gate dielectric layer (SiO2(30 nm)/Al2O3(3 nm)) was fabricated. Both the IZTO channel and colloidal Ag NC layers were prepared by spin-coating and subsequent annealing, and dip-coating process, respectively. A threshold voltage shift up to ~0.9 V, corresponding to the electron density of 6.5 × 1011 cm-2, at gate pulsing <=10 V was achieved by the charging of high density NCs. These results present the successful non-volatile memory characteristics of an oxide-semiconductor transistor fabricated through solution processes.
Design of a reversible single precision floating point subtractor.
Anantha Lakshmi, Av; Sudha, Gf
2014-01-04
In recent years, Reversible logic has emerged as a major area of research due to its ability to reduce the power dissipation which is the main requirement in the low power digital circuit design. It has wide applications like low power CMOS design, Nano-technology, Digital signal processing, Communication, DNA computing and Optical computing. Floating-point operations are needed very frequently in nearly all computing disciplines, and studies have shown floating-point addition/subtraction to be the most used floating-point operation. However, few designs exist on efficient reversible BCD subtractors but no work on reversible floating point subtractor. In this paper, it is proposed to present an efficient reversible single precision floating-point subtractor. The proposed design requires reversible designs of an 8-bit and a 24-bit comparator unit, an 8-bit and a 24-bit subtractor, and a normalization unit. For normalization, a 24-bit Reversible Leading Zero Detector and a 24-bit reversible shift register is implemented to shift the mantissas. To realize a reversible 1-bit comparator, in this paper, two new 3x3 reversible gates are proposed The proposed reversible 1-bit comparator is better and optimized in terms of the number of reversible gates used, the number of transistor count and the number of garbage outputs. The proposed work is analysed in terms of number of reversible gates, garbage outputs, constant inputs and quantum costs. Using these modules, an efficient design of a reversible single precision floating point subtractor is proposed. Proposed circuits have been simulated using Modelsim and synthesized using Xilinx Virtex5vlx30tff665-3. The total on-chip power consumed by the proposed 32-bit reversible floating point subtractor is 0.410 W.
Han, Su-Ting; Zhou, Ye; Yang, Qing Dan; Zhou, Li; Huang, Long-Biao; Yan, Yan; Lee, Chun-Sing; Roy, Vellaisamy A L
2014-02-25
Tunable memory characteristics are used in multioperational mode circuits where memory cells with various functionalities are needed in one combined device. It is always a challenge to obtain control over threshold voltage for multimode operation. On this regard, we use a strategy of shifting the work function of reduced graphene oxide (rGO) in a controlled manner through doping gold chloride (AuCl3) and obtained a gradient increase of rGO work function. By inserting doped rGO as floating gate, a controlled threshold voltage (Vth) shift has been achieved in both p- and n-type low voltage flexible memory devices with large memory window (up to 4 times for p-type and 8 times for n-type memory devices) in comparison with pristine rGO floating gate memory devices. By proper energy band engineering, we demonstrated a flexible floating gate memory device with larger memory window and controlled threshold voltage shifts.
NASA Ames UV-LED Poster Overview
NASA Technical Reports Server (NTRS)
Jaroux, Belgacem Amar
2015-01-01
UV-LED is a small satellite technology demonstration payload being flown on the Saudisat-4 spacecraft that is demonstrating non-contacting charge control of an isolated or floating mass using new solid-state ultra-violet light emitting diodes (UV-LEDs). Integrated to the rest of the spacecraft and launched on a Dnepr in June 19, 2014, the project is a collaboration between the NASA Ames Research Center (ARC), Stanford University, and King Abdulaziz City for Science and Technology (KACST). Beginning with its commissioning in December, 2015, the data collected by UV-LED have validated a novel method of charge control that will improve the performance of drag-free spacecraft allowing for concurrent science collection during charge management operations as well as reduce the mass, power and volume required while increasing lifetime and reliability of a charge management subsystem. UV-LED continues to operate, exploring new concepts in non-contacting charge control and collecting data crucial to understanding the lifetime of ultra-violet light emitting diodes in space. These improvements are crucial to the success of ground breaking missions such as LISA and BBO, and demonstrates the ability of low cost small satellite missions to provide technological advances that far exceed mission costs.
NASA Astrophysics Data System (ADS)
Bidzinski, Piotr; Miczek, Marcin; Adamowicz, Boguslawa; Mizue, Chihoko; Hashizume, Tamotsu
2011-04-01
The influence of interface state density and bulk carrier lifetime on the dependencies of photocapacitance versus wide range of gate bias (-0.1 to -3 V) and light intensity (109 to 1020 photon cm-2 s-1) was studied for metal/insulator/n-GaN UV light photodetector by means of numerical simulations. The light detection limit and photocapacitance saturation were analyzed in terms of the interface charge and interface Fermi level for electrons and holes and effective interface recombination velocity. It was proven that the excess carrier recombination through interface states is the main reason of photocapacitance signal quenching. It was found that the photodetector can work in various modes (on-off or quantitative light measurement) adjusted by the gate bias. A comparison between experimental data and theoretical capacitance-light intensity characteristics was made. A new method for the determination of the interface state density distribution from capacitance-voltage-light intensity measurements was also proposed.
Leaky Integrate-and-Fire Neuron Circuit Based on Floating-Gate Integrator
Kornijcuk, Vladimir; Lim, Hyungkwang; Seok, Jun Yeong; Kim, Guhyun; Kim, Seong Keun; Kim, Inho; Choi, Byung Joon; Jeong, Doo Seok
2016-01-01
The artificial spiking neural network (SNN) is promising and has been brought to the notice of the theoretical neuroscience and neuromorphic engineering research communities. In this light, we propose a new type of artificial spiking neuron based on leaky integrate-and-fire (LIF) behavior. A distinctive feature of the proposed FG-LIF neuron is the use of a floating-gate (FG) integrator rather than a capacitor-based one. The relaxation time of the charge on the FG relies mainly on the tunnel barrier profile, e.g., barrier height and thickness (rather than the area). This opens up the possibility of large-scale integration of neurons. The circuit simulation results offered biologically plausible spiking activity (<100 Hz) with a capacitor of merely 6 fF, which is hosted in an FG metal-oxide-semiconductor field-effect transistor. The FG-LIF neuron also has the advantage of low operation power (<30 pW/spike). Finally, the proposed circuit was subject to possible types of noise, e.g., thermal noise and burst noise. The simulation results indicated remarkable distributional features of interspike intervals that are fitted to Gamma distribution functions, similar to biological neurons in the neocortex. PMID:27242416
NASA Astrophysics Data System (ADS)
Watkins, James
2013-03-01
Roll-to-roll (R2R) technologies provide routes for continuous production of flexible, nanostructured materials and devices with high throughput and low cost. We employ additive-driven self-assembly to produce well-ordered polymer/nanoparticle hybrid materials that can serve as active device layers, we use highly filled nanoparticle/polymer hybrids for applications that require tailored dielectric constant or refractive index, and we employ R2R nanoimprint lithography for device scale patterning. Specific examples include the fabrication of flexible floating gate memory and large area films for optical/EM management. Our newly constructed R2R processing facility includes a custom designed, precision R2R UV-assisted nanoimprint lithography (NIL) system and hybrid nanostructured materials coaters.
NASA Astrophysics Data System (ADS)
Avila-Alonso, Dailé; Baetens, Jan M.; Cardenas, Rolando; de Baets, Bernard
2017-07-01
In this work, the photosynthesis model presented by Avila et al. in 2013 is extended and more scenarios inhabited by ancient cyanobacteria are investigated to quantify the effects of ultraviolet (UV) radiation on their photosynthetic potential in marine environments of the Archean eon. We consider ferrous ions as blockers of UV during the Early Archean, while the absorption spectrum of chlorophyll a is used to quantify the fraction of photosynthetically active radiation absorbed by photosynthetic organisms. UV could have induced photoinhibition at the water surface, thereby strongly affecting the species with low light use efficiency. A higher photosynthetic potential in early marine environments was shown than in the Late Archean as a consequence of the attenuation of UVC and UVB by iron ions, which probably played an important role in the protection of ancient free-floating bacteria from high-intensity UV radiation. Photosynthetic organisms in Archean coastal and ocean environments were probably abundant in the first 5 and 25 m of the water column, respectively. However, species with a relatively high efficiency in the use of light could have inhabited ocean waters up to a depth of 200 m and show a Deep Chlorophyll Maximum near 60 m depth. We show that the electromagnetic radiation from the Sun, both UV and visible light, could have determined the vertical distribution of Archean marine photosynthetic organisms.
Disturb-Free Three-Dimensional Vertical Floating Gate NAND with Separated-Sidewall Control Gate
NASA Astrophysics Data System (ADS)
Seo, Moon-Sik; Endoh, Tetsuo
2012-02-01
Recently, the three-dimensional (3D) vertical floating gate (FG) type NAND cell arrays with the sidewall control gate (SCG) structure are receiving attention to overcome the reliability issues of charge trap (CT) type 3D NAND. In order to achieve the multilevel cell (MLC) operation for lower bit cost in 3D NAND, it is important to eliminate reliability issues, such as the Vth distribution with interference and disturbance problems and Vth shift with retention issues. In this paper, we intensively investigated the disturbance problems of the 3D vertical FG type NAND cell with separated-sidewall control gate (S-SCG) structure for the reliable MLC operation. Above all, we successfully demonstrate the fully suppressed disturbance problems, such as indirect programming of the unselected cells, hot electron injection of the edge cells and direct influence to the neighboring passing cells, by using the S-SCG with 30 nm pillar size.
Zhu, Shujia; Riou, Morgane; Yao, C Andrea; Carvalho, Stéphanie; Rodriguez, Pamela C; Bensaude, Olivier; Paoletti, Pierre; Ye, Shixin
2014-04-22
Reprogramming receptors to artificially respond to light has strong potential for molecular studies and interrogation of biological functions. Here, we design a light-controlled ionotropic glutamate receptor by genetically encoding a photoreactive unnatural amino acid (UAA). The photo-cross-linker p-azido-L-phenylalanine (AzF) was encoded in NMDA receptors (NMDARs), a class of glutamate-gated ion channels that play key roles in neuronal development and plasticity. AzF incorporation in the obligatory GluN1 subunit at the GluN1/GluN2B N-terminal domain (NTD) upper lobe dimer interface leads to an irreversible allosteric inhibition of channel activity upon UV illumination. In contrast, when pairing the UAA-containing GluN1 subunit with the GluN2A subunit, light-dependent inactivation is completely absent. By combining electrophysiological and biochemical analyses, we identify subunit-specific structural determinants at the GluN1/GluN2 NTD dimer interfaces that critically dictate UV-controlled inactivation. Our work reveals that the two major NMDAR subtypes differ in their ectodomain-subunit interactions, in particular their electrostatic contacts, resulting in GluN1 NTD coupling more tightly to the GluN2B NTD than to the GluN2A NTD. It also paves the way for engineering light-sensitive ligand-gated ion channels with subtype specificity through the genetic code expansion.
Focusing light through dynamical samples using fast continuous wavefront optimization.
Blochet, B; Bourdieu, L; Gigan, S
2017-12-01
We describe a fast continuous optimization wavefront shaping system able to focus light through dynamic scattering media. A micro-electro-mechanical system-based spatial light modulator, a fast photodetector, and field programmable gate array electronics are combined to implement a continuous optimization of a wavefront with a single-mode optimization rate of 4.1 kHz. The system performances are demonstrated by focusing light through colloidal solutions of TiO 2 particles in glycerol with tunable temporal stability.
Nine-channel mid-power bipolar pulse generator based on a field programmable gate array
DOE Office of Scientific and Technical Information (OSTI.GOV)
Haylock, Ben, E-mail: benjamin.haylock2@griffithuni.edu.au; Lenzini, Francesco; Kasture, Sachin
Many channel arbitrary pulse sequence generation is required for the electro-optic reconfiguration of optical waveguide networks in Lithium Niobate. Here we describe a scalable solution to the requirement for mid-power bipolar parallel outputs, based on pulse patterns generated by an externally clocked field programmable gate array. Positive and negative pulses can be generated at repetition rates up to 80 MHz with pulse width adjustable in increments of 1.6 ns across nine independent outputs. Each channel can provide 1.5 W of RF power and can be synchronised with the operation of other components in an optical network such as light sourcesmore » and detectors through an external clock with adjustable delay.« less
FLOAT OPERATED RADIAL GATE INSTALLATION. WASTEWAY NO. 1. WELLTONMOHAWK CANAL ...
FLOAT OPERATED RADIAL GATE INSTALLATION. WASTEWAY NO. 1. WELLTON-MOHAWK CANAL - STA. 99+23.50. United States Department of the Interior, Bureau of Reclamation; Gila Project, Arizona, Wellton-Mohawk Division. Drawing No. 50-D-2497, dated March 8, 1949, Denver Colorado. Sheet 1 of 7 - Wellton-Mohawk Irrigation System, Wasteway No. 1, Wellton-Mohawk Canal, North side of Wellton-Mohawk Canal, bounded by Gila River to North & the Union Pacific Railroad & Gila Mountains to south, Wellton, Yuma County, AZ
FLOAT OPERATED RADIAL GATE HOIST ASSEMBLY LIST OF PARTS ...
FLOAT OPERATED RADIAL GATE HOIST ASSEMBLY - LIST OF PARTS - BASE-CRANK. WASTEWAY NO. 1. WELLTON-MOHAWK CANAL - STA. 99+23.50. United States Department of the Interior, Bureau of Reclamation; Gila Project, Arizona, Wellton-Mohawk Division. Drawing No. 50-D-2511, dated May 3, 1949, Denver Colorado. Sheet 1 of 2 - Wellton-Mohawk Irrigation System, Wasteway No. 1, Wellton-Mohawk Canal, North side of Wellton-Mohawk Canal, bounded by Gila River to North & the Union Pacific Railroad & Gila Mountains to south, Wellton, Yuma County, AZ
NASA Astrophysics Data System (ADS)
Han, Su-Ting; Zhou, Ye; Chen, Bo; Zhou, Li; Yan, Yan; Zhang, Hua; Roy, V. A. L.
2015-10-01
Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure.Semiconducting two-dimensional materials appear to be excellent candidates for non-volatile memory applications. However, the limited controllability of charge trapping behaviors and the lack of multi-bit storage studies in two-dimensional based memory devices require further improvement for realistic applications. Here, we report a flash memory consisting of metal NPs-molybdenum disulphide (MoS2) as a floating gate by introducing a metal nanoparticle (NP) (Ag, Au, Pt) monolayer underneath the MoS2 nanosheets. Controlled charge trapping and long data retention have been achieved in a metal (Ag, Au, Pt) NPs-MoS2 floating gate flash memory. This controlled charge trapping is hypothesized to be attributed to band bending and a built-in electric field ξbi between the interface of the metal NPs and MoS2. The metal NPs-MoS2 floating gate flash memories were further proven to be multi-bit memory storage devices possessing a 3-bit storage capability and a good retention capability up to 104 s. We anticipate that these findings would provide scientific insight for the development of novel memory devices utilizing an atomically thin two-dimensional lattice structure. Electronic supplementary information (ESI) available: Energy-dispersive X-ray spectroscopy (EDS) spectra of the metal NPs, SEM image of MoS2 on Au NPs, erasing operations of the metal NPs-MoS2 memory device, transfer characteristics of the standard FET devices and Ag NP devices under programming operation, tapping-mode AFM height image of the fabricated MoS2 film for pristine MoS2 flash memory, gate signals used for programming the Au NPs-MoS2 and Pt NPs-MoS2 flash memories, and data levels recorded for 100 sequential cycles. See DOI: 10.1039/c5nr05054e
NASA Astrophysics Data System (ADS)
Smith, Ryan Scott
As the gate density increases in microelectronic devices, the interconnect delay or RC response also increases and has become the limiting delay to faster devices. In order to decrease the RC time delay, a new metallization scheme has been chosen by the semiconductor industry. Copper has replaced aluminum as the metal lines and new low-k dielectric materials are being developed to replace silicon dioxide. A promising low-k material is porous organosilicate glass or p-OSG. The p-OSG film is a hybrid material where the silicon dioxide backbone is terminated with methyl or hydrogen, reducing the dielectric constant and creating mechanically weak films that are prone to fracture. A few methods of improving the mechanical properties of p-OSG films have been attempted-- exposing the film to hydrogen plasma, electron beam curing, and ultra-violet light curing. Hydrogen plasma and electron-beam curing suffer from a lack of specificity and can cause charging damage to the gates. Therefore, ultra-violet light curing (UV curing) is preferable. The effect of UV curing on an ultra-low-k, k~2.5, p-OSG film is studied in this dissertation. Changes in the molecular structure were measured with Fourier Transform Infrared Spectroscopy and X-ray Photoelectron Spectroscopy. The evolution of the molecular structure with UV curing was correlated with material and fracture properties. The material properties were film shrinkage, densification, and an increase in dielectric constant. From the changes in molecular structure and material properties, a set of condensation reactions with UV light are predicted. The connectivity of the film increases with the condensation reactions and, therefore, the fracture toughness should also increase. The effect of UV curing on the critical and sub-critical fracture toughness was also studied. The critical fracture toughness was measured at four different mode-mixes-- zero, 15°, 32°, and 42°. It was found that the critical fracture toughness increases with UV exposure for all mode mixes. The sub-critical fracture toughness was measured in Mode I and found to be insensitive to UV cure. A simple reaction rate model is used to explain the difference in critical and sub-critical fracture toughness.
Fan, Kaiqi; Yang, Jun; Wang, Xiaobo; Song, Jian
2014-11-07
A gelator containing a sorbitol moiety and a naphthalene-based salicylideneaniline group exhibits macroscopic gel-sol behavior in response to four complementary input stimuli: temperature, UV light, OH(-), and Cu(2+). On the basis of its multiple-stimuli responsive properties, we constructed a rational gel-based supramolecular logic gate that performed OR and INH types of reversible stimulus responsive gel-sol transition in the presence of various combinations of the four stimuli when the gel state was defined as an output. Moreover, a combination two-output logic gate was obtained, owing to the existence of the naked eye as an additional output. Hence, gelator 1 could construct not only a basic logic gate, but also a two-input-two-output logic gate because of its response to multiple chemical stimuli and multiple output signals, in which one input could erase the effect of another input.
Zhao, Junwei; He, Zhaoshuai; Li, Biao; Cheng, Tanyu; Liu, Guohua
2017-04-01
Recently, the controlled drug delivery system has become a potential platform for biomedical application. Herein, we developed a pH and light-dual controlled cargo release system exhibiting AND logic based on MCM-41 mesoporous silica nanoparticles, which was surface modified using β-cyclodextrin (β-CD) with imine bond and azobenzene derivative. The complex of β-CD and azobenzene derivative effectively blocked the cargo delivery in pH=7.0 phosphate buffered saline (PBS) solution without 365nm UV light irradiation. The cargo was fully released when both factors of acidic environment (pH=5.0 PBS) and 365nm UV light irradiation were satisfied, meanwhile only very little cargo was delivered if one factor was satisfied. The result also demonstrates that the opening/closing of the gate and the release of the cargo in small portions can be controlled. Copyright © 2016 Elsevier B.V. All rights reserved.
Attaccalite, Claudio; Wirtz, Ludger; Marini, Andrea; Rubio, Angel
2013-01-01
Boron nitride is a promising material for nanotechnology applications due to its two-dimensional graphene-like, insulating, and highly-resistant structure. Recently it has received a lot of attention as a substrate to grow and isolate graphene as well as for its intrinsic UV lasing response. Similar to carbon, one-dimensional boron nitride nanotubes (BNNTs) have been theoretically predicted and later synthesised. Here we use first principles simulations to unambiguously demonstrate that i) BN nanotubes inherit the highly efficient UV luminescence of hexagonal BN; ii) the application of an external perpendicular field closes the electronic gap keeping the UV lasing with lower yield; iii) defects in BNNTS are responsible for tunable light emission from the UV to the visible controlled by a transverse electric field (TEF). Our present findings pave the road towards optoelectronic applications of BN-nanotube-based devices that are simple to implement because they do not require any special doping or complex growth. PMID:24060843
Metal-to-insulator transition induced by UV illumination in a single SnO2 nanobelt
NASA Astrophysics Data System (ADS)
Viana, E. R.; Ribeiro, G. M.; de Oliveira, A. G.; González, J. C.
2017-11-01
An individual tin oxide (SnO2) nanobelt was connected in a back-gate field-effect transistor configuration and the conductivity of the nanobelt was measured at different temperatures from 400 K to 4 K, in darkness and under UV illumination. In darkness, the SnO2 nanobelts showed semiconductor behavior for the whole temperature range measured. However, when subjected to UV illumination the photoinduced carriers were high enough to lead to a metal-to-insulator transition (MIT), near room temperature, at T MIT = 240 K. By measuring the current versus gate voltage curves, and considering the electrostatic properties of a non-ideal conductor, for the SnO2 nanobelt on top of a gate-oxide substrate, we estimated the capacitance per unit length, the mobility and the density of carriers. In darkness, the density was estimated to be 5-10 × 1018 cm-3, in agreement with our previously reported result (Phys. Status Solid. RRL 6, 262-4 (2012)). However, under UV illumination the density of carriers was estimated to be 0.2-3.8 × 1019 cm-3 near T MIT, which exceeded the critical Mott density estimated to be 2.8 × 1019 cm-3 above 240 K. These results showed that the electrical properties of the SnO2 nanobelts can be drastically modified and easily tuned from semiconducting to metallic states as a function of temperature and light.
UVPROM dosimetry, microdosimetry and applications to SEU and extreme value theory
NASA Astrophysics Data System (ADS)
Scheick, Leif Zebediah
A new method is described for characterizing a device in terms of the statistical distribution of first failures. The method is based on the erasure of a commercial Ultra- Violet erasable Programmable Read Only Memory (UVPROM). The method of readout would be used on a spacecraft or in other restrictive radiation environments. The measurement of the charge remaining on the floating gate is used to determine absorbed dose. The method of determining dose does not require the detector to be destroyed or erased nor does it effect the ability for taking further measurements. This is compared to extreme value theory applied to the statistical distributions that apply to this device. This technique predicts the threshold of Single Event Effects (SEE), like anomalous changes in erasure time in programmable devices due to high microdose energy-deposition events. This technique also allows for advanced non-destructive, screening of a single microelectronic devices for predictable response in a stressful, i.e. radiation, environments.
Wang, Wei; Hwang, Sun Kak; Kim, Kang Lib; Lee, Ju Han; Cho, Suk Man; Park, Cheolmin
2015-05-27
The core components of a floating-gate organic thin-film transistor nonvolatile memory (OTFT-NVM) include the semiconducting channel layer, tunneling layer, floating-gate layer, and blocking layer, besides three terminal electrodes. In this study, we demonstrated OTFT-NVMs with all four constituent layers made of polymers based on consecutive spin-coating. Ambipolar charges injected and trapped in a polymer electret charge-controlling layer upon gate program and erase field successfully allowed for reliable bistable channel current levels at zero gate voltage. We have observed that the memory performance, in particular the reliability of a device, significantly depends upon the thickness of both blocking and tunneling layers, and with an optimized layer thickness and materials selection, our device exhibits a memory window of 15.4 V, on/off current ratio of 2 × 10(4), read and write endurance cycles over 100, and time-dependent data retention of 10(8) s, even when fabricated on a mechanically flexible plastic substrate.
Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics
Kim, Seongsu; Kim, Tae Yun; Lee, Kang Hyuck; Kim, Tae-Ho; Cimini, Francesco Arturo; Kim, Sung Kyun; Hinchet, Ronan; Kim, Sang-Woo; Falconi, Christian
2017-01-01
Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air–SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n+ and p/p+ junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand. PMID:28649986
Rewritable ghost floating gates by tunnelling triboelectrification for two-dimensional electronics
NASA Astrophysics Data System (ADS)
Kim, Seongsu; Kim, Tae Yun; Lee, Kang Hyuck; Kim, Tae-Ho; Cimini, Francesco Arturo; Kim, Sung Kyun; Hinchet, Ronan; Kim, Sang-Woo; Falconi, Christian
2017-06-01
Gates can electrostatically control charges inside two-dimensional materials. However, integrating independent gates typically requires depositing and patterning suitable insulators and conductors. Moreover, after manufacturing, gates are unchangeable. Here we introduce tunnelling triboelectrification for localizing electric charges in very close proximity of two-dimensional materials. As representative materials, we use chemical vapour deposition graphene deposited on a SiO2/Si substrate. The triboelectric charges, generated by friction with a Pt-coated atomic force microscope tip and injected through defects, are trapped at the air-SiO2 interface underneath graphene and act as ghost floating gates. Tunnelling triboelectrification uniquely permits to create, modify and destroy p and n regions at will with the spatial resolution of atomic force microscopes. As a proof of concept, we draw rewritable p/n+ and p/p+ junctions with resolutions as small as 200 nm. Our results open the way to time-variant two-dimensional electronics where conductors, p and n regions can be defined on demand.
Two-Functional Direct Current Sputtered Silver-Containing Titanium Dioxide Thin Films
NASA Astrophysics Data System (ADS)
Musil, J.; Louda, M.; Cerstvy, R.; Baroch, P.; Ditta, I. B.; Steele, A.; Foster, H. A.
2009-04-01
The article reports on structure, mechanical, optical, photocatalytic and biocidal properties of Ti-Ag-O films. The Ti-Ag-O films were reactively sputter-deposited from a composed Ti/Ag target at different partial pressures of oxygen p_{O2} on unheated glass substrate held on floating potential U fl. It was found that addition of 2 at.% of Ag into TiO2 film has no negative influence on UV-induced hydrophilicity of TiO2 film. Thick ( 1,500 nm) TiO2/Ag films containing (200) anatase phase exhibit the best hydrophilicity with water droplet contact angle (WDCA) lower than 10° after UV irradiation for 20 min. Thick ( 1,500 nm) TiO2/Ag films exhibited a better UV-induced hydrophilicity compared to that of thinner ( 700 nm) TiO2/Ag films. Further it was found that hydrophilic TiO2/Ag films exhibit a strong biocidal effect under both the visible light and the UV irradiation with 100% killing efficiency of Escherichia coli ATCC 10536 after UV irradiation for 20 min. Reported results show that single layer of TiO2 with Ag distributed in its whole volume exhibits, after UV irradiation, simultaneously two functions: (1) excellent hydrophilicity with WDCA < 10° and (2) strong power to kill E. coli even under visible light due to direct toxicity of Ag.
X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors
NASA Astrophysics Data System (ADS)
Park, Mingyo; Min, Byung-Wook
2018-03-01
This paper presents an X-band transmit/receive switch using multi-gate NMOS transistors in a silicon-on-insulator CMOS process. For low loss and high power handling capability, floating body multi-gate NMOS transistors are adopted instead of conventional stacked NMOS transistors, resulting in 53% reduction of transistor area. Comparing to the stacked NMOS transistors, the multi gate transistor shares the source and drain region between stacked transistors, resulting in reduced chip area and parasitics. The impedance between bodies of gates in multi-gate NMOS transistors is assumed to be very large during design and confirmed after measurement. The measured input 1 dB compression point is 34 dBm. The measured insertion losses of TX and RX modes are respectively 1.7 dB and 2.0 dB at 11 GHz, and the measured isolations of TX and RX modes are >27 dB and >20 dB in X-band, respectively. The chip size is 0.086 mm2 without pads, which is 25% smaller than the T/R switch with stacked transistors.
A Reversible DNA Logic Gate Platform Operated by One- and Two-Photon Excitations.
Tam, Dick Yan; Dai, Ziwen; Chan, Miu Shan; Liu, Ling Sum; Cheung, Man Ching; Bolze, Frederic; Tin, Chung; Lo, Pik Kwan
2016-01-04
We demonstrate the use of two different wavelength ranges of excitation light as inputs to remotely trigger the responses of the self-assembled DNA devices (D-OR). As an important feature of this device, the dependence of the readout fluorescent signals on the two external inputs, UV excitation for 1 min and/or near infrared irradiation (NIR) at 800 nm fs laser pulses, can mimic function of signal communication in OR logic gates. Their operations could be reset easily to its initial state. Furthermore, these DNA devices exhibit efficient cellular uptake, low cytotoxicity, and high bio-stability in different cell lines. They are considered as the first example of a photo-responsive DNA logic gate system, as well as a biocompatible, multi-wavelength excited system in response to UV and NIR. This is an important step to explore the concept of photo-responsive DNA-based systems as versatile tools in DNA computing, display devices, optical communication, and biology. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Upsets in Erased Floating Gate Cells With High-Energy Protons
Gerardin, S.; Bagatin, M.; Paccagnella, A.; ...
2017-01-01
We discuss upsets in erased floating gate cells, due to large threshold voltage shifts, using statistical distributions collected on a large number of memory cells. The spread in the neutral threshold voltage appears to be too low to quantitatively explain the experimental observations in terms of simple charge loss, at least in SLC devices. The possibility that memories exposed to high energy protons and heavy ions exhibit negative charge transfer between programmed and erased cells is investigated, although the analysis does not provide conclusive support to this hypothesis.
The GaN trench gate MOSFET with floating islands: High breakdown voltage and improved BFOM
NASA Astrophysics Data System (ADS)
Shen, Lingyan; Müller, Stephan; Cheng, Xinhong; Zhang, Dongliang; Zheng, Li; Xu, Dawei; Yu, Yuehui; Meissner, Elke; Erlbacher, Tobias
2018-02-01
A novel GaN trench gate (TG) MOSFET with P-type floating islands (FLI) in drift region, which can suppress the electric field peak at bottom of gate trench during the blocking state and prevent premature breakdown in gate oxide, is proposed and investigated by TCAD simulations. The influence of thickness, position, doping concentration and length of the FLI on breakdown voltage (BV) and specific on-resistance (Ron_sp) is studied, providing useful guidelines for design of this new type of device. Using optimized parameters for the FLI, GaN FLI TG-MOSFET obtains a BV as high as 2464 V with a Ron_sp of 3.0 mΩ cm2. Compared to the conventional GaN TG-MOSFET with the same structure parameters, the Baliga figure of merit (BFOM) is enhanced by 150%, getting closer to theoretical limit for GaN devices.
Programmable bioelectronics in a stimuli-encoded 3D graphene interface.
Parlak, Onur; Beyazit, Selim; Tse-Sum-Bui, Bernadette; Haupt, Karsten; Turner, Anthony P F; Tiwari, Ashutosh
2016-05-21
The ability to program and mimic the dynamic microenvironment of living organisms is a crucial step towards the engineering of advanced bioelectronics. Here, we report for the first time a design for programmable bioelectronics, with 'built-in' switchable and tunable bio-catalytic performance that responds simultaneously to appropriate stimuli. The designed bio-electrodes comprise light and temperature responsive compartments, which allow the building of Boolean logic gates (i.e."OR" and "AND") based on enzymatic communications to deliver logic operations.
Mourot, Alexandre; Herold, Christian; Kienzler, Michael A; Kramer, Richard H
2017-06-20
The photo-isomerizable local anaesthetic, quaternary ammonium-azobenzene-quaternary ammonium (QAQ), provides rapid, optical control over pain signalling without involving genetic modification. In darkness or in green light, trans-QAQ blocks voltage-gated K + and Na + channels and silences action potentials in pain-sensing neurons. Upon photo-isomerization to cis with near UV light, QAQ blockade is rapidly relieved, restoring neuronal activity. However, the molecular mechanism of cis and trans QAQ blockade is not known. Moreover, the absorption spectrum of QAQ requires UV light for photo-control, precluding use deep inside neural tissue. Electrophysiology and molecular modelling were used to characterize the binding of cis and trans QAQ to voltage-gated K + channels and to develop quaternary ammonium-ethylamine-azobenzene-quaternary ammonium (QENAQ), a red-shifted QAQ derivative controlled with visible light. trans QAQ was sixfold more potent than cis QAQ, in blocking current through Shaker K + channels. Both isomers were use-dependent, open channel blockers, binding from the cytoplasmic side, but only trans QAQ block was slightly voltage dependent. QENAQ also blocked native K + and Na + channels preferentially in the trans state. QENAQ was photo-isomerized to cis with blue light and spontaneously reverted to trans within seconds in darkness, enabling rapid photo-control of action potentials in sensory neurons. Light-switchable local anaesthetics provide a means to non-invasively photo-control pain signalling with high selectivity and fast kinetics. Understanding the mode of action of QAQ and related compounds will help to design of drugs with improved photo-pharmacological properties. © 2017 The British Pharmacological Society.
Häder, D P; Lebert, M; Helbling, E W
2001-09-01
The photosynthetic performance of Enteromorpha linza (L.) J. Agardh-Chlorophyceae was determined with a portable PAM instrument in situ and under seminatural radiation conditions in Patagonia, Argentina. Solar radiation was measured in parallel with a three-channel radiometer, ELDONET (Real Time Computer, Möhrendorf, Germany), in three wavelength ranges, UV-B (280-315 nm), UV-A (315-400 nm), and PAR (400-700 nm). The effective photosynthetic quantum yield decreased after 15-min exposure to solar radiation when the thalli were kept in a fixed position but recovered in the subsequent shade conditions within several hours. A 30-min exposure of free floating thalli, however, caused less photoinhibition. The photosynthetic quantum yield of E. linza was also followed over whole days under clear sky, partly cloudy and rainy conditions in a large reservoir of water (free floating thalli) and in situ (thalli growing in rock pools). Most of the observed effect was due to visible radiation; however, the UV wavelength range, and especially UV-B, caused a significant reduction of the photosynthetic quantum yield. Fluence rate response curves indicated that the species is a typical shade plant which showed non-photochemical quenching at intermediate and higher irradiances. This is a surprising result since these algae are found in the upper eulittoral where they are exposed to high irradiances. Obviously they utilize light only during periods of low irradiances (morning, evening, high tide) while they shut down the electron transport chain during intensive exposure. Fast induction and relaxation kinetics have been measured in these algae for the first time and indicated a rapid adaptation of the photosynthetic capacity to the changing light conditions as well as a fast decrease of PS II fluorescence upon exposure to solar radiation. There was a strong bleaching of chlorophyll due to exposure to solar radiation but less drastic bleaching of carotenoids.
Two-dimensional non-volatile programmable p-n junctions
NASA Astrophysics Data System (ADS)
Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M.; Zhang, Zengxing
2017-09-01
Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe2/hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 104 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.
Two-dimensional non-volatile programmable p-n junctions.
Li, Dong; Chen, Mingyuan; Sun, Zhengzong; Yu, Peng; Liu, Zheng; Ajayan, Pulickel M; Zhang, Zengxing
2017-09-01
Semiconductor p-n junctions are the elementary building blocks of most electronic and optoelectronic devices. The need for their miniaturization has fuelled the rapid growth of interest in two-dimensional (2D) materials. However, the performance of a p-n junction considerably degrades as its thickness approaches a few nanometres and traditional technologies, such as doping and implantation, become invalid at the nanoscale. Here we report stable non-volatile programmable p-n junctions fabricated from the vertically stacked all-2D semiconductor/insulator/metal layers (WSe 2 /hexagonal boron nitride/graphene) in a semifloating gate field-effect transistor configuration. The junction exhibits a good rectifying behaviour with a rectification ratio of 10 4 and photovoltaic properties with a power conversion efficiency up to 4.1% under a 6.8 nW light. Based on the non-volatile programmable properties controlled by gate voltages, the 2D p-n junctions have been exploited for various electronic and optoelectronic applications, such as memories, photovoltaics, logic rectifiers and logic optoelectronic circuits.
NASA Astrophysics Data System (ADS)
Song, Jingke; Wang, Xuejiang; Bu, Yunjie; Wang, Xin; Zhang, Jing; Huang, Jiayu; Ma, RongRong; Zhao, Jianfu
2017-01-01
Due to the advantage of floating on water surface, floating photocatalysts show higher rates of radical formation and collection efficiencies. And they were expected to be used for solar remediation of non-stirred and non-oxygenated reservoirs. In this research, floating fly ash cenospheres (FAC) supported layer-by- layer hybrid carbonized chitosan and Fe-N-codoped TiO2 was prepared by a simple sol-gel method. The catalysts were characterized by X-ray diffraction(XRD), field emission scanning electron microscopy(FESEM), fourier transform infrared spectroscopy(FTIR), X-ray photoelectron spectroscopy (XPS), UV-vis diffuse reflectance spectroscopy(DRS), nitrogen adsorption analyses for Brunauer-Emmett-Teller (BET) specific surface area. It is indicated that Fe-N codoped narrowed the material's band gap, and the layer of carbonized chitosan (Cts) increased the catalyst's adsorption capacity and the absorption ability of visible light. Comparing with Fe-N-TiO2/FAC and N-TiO2/FAC, the composite photocatalyst show excellent performance on the degradation of RhB. Photodegradation rate of RhB by Fe-N-TiO2/FAC-Cts was 0.01018 min-1, which is about 1.5 and 2.09 times higher than Fe-N-TiO2/FAC and N-TiO2/FAC under visible light irradiation in 240 min, respectively. The dye photosentization, capture of holes and electrons by Fe3+ ion, and synergistic effect of adsorption and photodegradation were attributed to the results for the improvement of photocatalytic performance. The floating photocatalyst can be reused for at least three consecutive times without any significant decrease on the degradation of Rhodamin B after each reuse.
Field Programmable Gate Array Control of Power Systems in Graduate Student Laboratories
2008-03-01
NAVAL POSTGRADUATE SCHOOL MONTEREY, CALIFORNIA THESIS Approved for public release; distribution is unlimited FIELD PROGRAMMABLE...REPORT TYPE AND DATES COVERED Master’s Thesis 4. TITLE AND SUBTITLE Field Programmable Gate Array Control of Power Systems in Graduate Student...Electronics curriculum track is the development of a design center that explores Field Programmable Gate Array (FPGA) control of power electronics
Environmental Effects on Data Retention in Flash Cells
NASA Technical Reports Server (NTRS)
Katz, Rich; Flowers, David; Bergevin, Keith
2017-01-01
Flash technology is being utilized in fuzed munition applications and, based on the development of digital logic devices in the commercial world, usage of flash technology will increase. Antifuse technology, prevalent in non-volatile field programmable gate arrays (FPGAs), will eventually be phased out as new devices have not been developed for approximately a decade. The reliance on flash technology presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. This paper will present the results of our on-going tests: long-term storage at 150 C for a small population of devices, neutron radiation exposure, electrostatic discharge (ESD) testing, and the trends of large populations (over 300 devices for each condition) exposed to three difference temperatures: 25 C, 125 C, and 150 C.
NASA Astrophysics Data System (ADS)
Leroy, Yann; Armeanu, Dumitru; Cordan, Anne-Sophie
2011-05-01
The improvement of our model concerning a single nanocrystal that belongs to a nanocrystal floating gate of a flash memory is presented. In order to extend the gate voltage range applicability of the model, the 3D continuum of states of either metallic or semiconducting electrodes is discretized into 2D subbands. Such an approach gives precise information about the mechanisms behind the charging or release processes of the nanocrystal. Then, the self-energy and screening effects of an electron within the nanocrystal are evaluated and introduced in the model. This enables a better determination of the operating point of the nanocrystal memory. The impact of those improvements on the charging or release time of the nanocrystal is discussed.
NASA Astrophysics Data System (ADS)
Samanta, Piyas
2017-09-01
We present a detailed investigation on temperature-dependent current conduction through thin tunnel oxides grown on degenerately doped n-type silicon (n+-Si) under positive bias ( VG ) on heavily doped n-type polycrystalline silicon (n+-polySi) gate in metal-oxide-semiconductor devices. The leakage current measured between 298 and 573 K and at oxide fields ranging from 6 to 10 MV/cm is primarily attributed to Poole-Frenkel (PF) emission of trapped electrons from the neutral electron traps located in the silicon dioxide (SiO2) band gap in addition to Fowler-Nordheim (FN) tunneling of electrons from n+-Si acting as the drain node in FLOating gate Tunnel OXide Electrically Erasable Programmable Read-Only Memory devices. Process-induced neutral electron traps are located at 0.18 eV and 0.9 eV below the SiO2 conduction band. Throughout the temperature range studied here, PF emission current IPF dominates FN electron tunneling current IFN at oxide electric fields Eox between 6 and 10 MV/cm. A physics based new analytical formula has been developed for FN tunneling of electrons from the accumulation layer of degenerate semiconductors at a wide range of temperatures incorporating the image force barrier rounding effect. FN tunneling has been formulated in the framework of Wentzel-Kramers-Brilloiun taking into account the correction factor due to abrupt variation of the energy barrier at the cathode/oxide interface. The effect of interfacial and near-interfacial trapped-oxide charges on FN tunneling has also been investigated in detail at positive VG . The mechanism of leakage current conduction through SiO2 films plays a crucial role in simulation of time-dependent dielectric breakdown of the memory devices and to precisely predict the normal operating field or applied floating gate (FG) voltage for lifetime projection of the devices. In addition, we present theoretical results showing the effect of drain doping concentration on the FG leakage current.
Radiation-hardened optically reconfigurable gate array exploiting holographic memory characteristics
NASA Astrophysics Data System (ADS)
Seto, Daisaku; Watanabe, Minoru
2015-09-01
In this paper, we present a proposal for a radiation-hardened optically reconfigurable gate array (ORGA). The ORGA is a type of field programmable gate array (FPGA). The ORGA configuration can be executed by the exploitation of holographic memory characteristics even if 20% of the configuration data are damaged. Moreover, the optoelectronic technology enables the high-speed reconfiguration of the programmable gate array. Such a high-speed reconfiguration can increase the radiation tolerance of its programmable gate array to 9.3 × 104 times higher than that of current FPGAs. Through experimentation, this study clarified the configuration dependability using the impulse-noise emulation and high-speed configuration capabilities of the ORGA with corrupt configuration contexts. Moreover, the radiation tolerance of the programmable gate array was confirmed theoretically through probabilistic calculation.
Theory of the synchronous motion of an array of floating flap gates oscillating wave surge converter
NASA Astrophysics Data System (ADS)
Michele, Simone; Sammarco, Paolo; d'Errico, Michele
2016-08-01
We consider a finite array of floating flap gates oscillating wave surge converter (OWSC) in water of constant depth. The diffraction and radiation potentials are solved in terms of elliptical coordinates and Mathieu functions. Generated power and capture width ratio of a single gate excited by incoming waves are given in terms of the radiated wave amplitude in the far field. Similar to the case of axially symmetric absorbers, the maximum power extracted is shown to be directly proportional to the incident wave characteristics: energy flux, angle of incidence and wavelength. Accordingly, the capture width ratio is directly proportional to the wavelength, thus giving a design estimate of the maximum efficiency of the system. We then compare the array and the single gate in terms of energy production. For regular waves, we show that excitation of the out-of-phase natural modes of the array increases the power output, while in the case of random seas we show that the array and the single gate achieve the same efficiency.
NASA Astrophysics Data System (ADS)
Imaizumi, Yuki; Goda, Tatsuro; Toya, Yutaro; Matsumoto, Akira; Miyahara, Yuji
2016-01-01
The extracellular ionic microenvironment has a close relationship to biological activities such as by cellular respiration, cancer development, and immune response. A system composed of ion-sensitive field-effect transistors (ISFET), cells, and program-controlled fluidics has enabled the acquisition of real-time information about the integrity of the cell membrane via pH measurement. Here we aimed to extend this system toward floating cells such as T lymphocytes for investigating complement activation and pharmacokinetics through alternations in the plasma membrane integrity. We functionalized the surface of tantalum oxide gate insulator of ISFET with oleyl-tethered phosphonic acid for interacting with the plasma membranes of floating cells without affecting the cell signaling. The surface modification was characterized by X-ray photoelectron spectroscopy and water contact angle measurements. The Nernst response of -37.8 mV/pH was obtained for the surface-modified ISFET at 37 °C. The oleyl group-functionalized gate insulator successfully captured Jurkat T cells in a fluidic condition without acute cytotoxicity. The system was able to record the time course of pH changes at the cells/ISFET interface during the process of instant addition and withdrawal of ammonium chloride. Further, the plasma membrane injury of floating cells after exposure by detergent Triton™ X-100 was successfully determined using the modified ISFET with enhanced sensitivity as compared with conventional hemolysis assays.
Imaizumi, Yuki; Goda, Tatsuro; Toya, Yutaro; Matsumoto, Akira; Miyahara, Yuji
2016-01-01
Abstract The extracellular ionic microenvironment has a close relationship to biological activities such as by cellular respiration, cancer development, and immune response. A system composed of ion-sensitive field-effect transistors (ISFET), cells, and program-controlled fluidics has enabled the acquisition of real-time information about the integrity of the cell membrane via pH measurement. Here we aimed to extend this system toward floating cells such as T lymphocytes for investigating complement activation and pharmacokinetics through alternations in the plasma membrane integrity. We functionalized the surface of tantalum oxide gate insulator of ISFET with oleyl-tethered phosphonic acid for interacting with the plasma membranes of floating cells without affecting the cell signaling. The surface modification was characterized by X-ray photoelectron spectroscopy and water contact angle measurements. The Nernst response of −37.8 mV/pH was obtained for the surface-modified ISFET at 37 °C. The oleyl group-functionalized gate insulator successfully captured Jurkat T cells in a fluidic condition without acute cytotoxicity. The system was able to record the time course of pH changes at the cells/ISFET interface during the process of instant addition and withdrawal of ammonium chloride. Further, the plasma membrane injury of floating cells after exposure by detergent Triton™ X-100 was successfully determined using the modified ISFET with enhanced sensitivity as compared with conventional hemolysis assays. PMID:27877886
Electrical overstress in AlGaN/GaN HEMTs: study of degradation processes
NASA Astrophysics Data System (ADS)
Kuzmík, J.; Pogany, D.; Gornik, E.; Javorka, P.; Kordoš, P.
2004-02-01
We study degradation mechanisms in 50 μm gate width/0.45 μm length AlGaN/GaN HEMTs after electrical overstresses. One hundred nanosecond long rectangular current pulses are applied on the drain contact keeping either both of the source and gate grounded or the source grounded and gate floating. Source-drain pulsed I- V characteristics show similar shape for both connections. After the HEMT undergoes the source-drain breakdown, a negative differential resistance region transits into a low voltage/high current region. Changes in the Schottky contact dc I- V characteristics and in the source and drain ohmic contacts are investigated as a function of the current stress level and are related to the HEMT dc performance. Catastrophic HEMT degradation was observed after Istress=1.65 A in case of the 'gate floating' connection due to ohmic contacts burnout. In case of the 'gate grounded' connection, Istress=0.45 A was sufficient for the gate failure showing a high gate susceptibility to overstress. Backside transient interferometric mapping technique experiment reveals a current filament formation under both HEMT stress connections. Infrared camera observations lead to conclusion that the filament formation together with a consequent high-density electron flow is responsible for a dark spot formation and gradual ohmic contact degradation.
NASA Astrophysics Data System (ADS)
Han, Chang-Wook; Han, Min-Koo; Choi, Nack-Bong; Kim, Chang-Dong; Kim, Ki-Yong; Chung, In-Jae
2007-07-01
Hydrogenated amorphous silicon (a-Si:H) thin-film transistors (TFTs) were fabricated on a flexible stainless-steel (SS) substrate. The stability of the a-Si:H TFT is a key issue for active matrix organic light-emitting diodes (AMOLEDs). The drain current decreases because of the threshold voltage shift (Δ VTH) during OLED driving. A negative voltage at a floated gate can be induced by a negative substrate bias through a capacitor between the substrate and the gate electrode without additional circuits. The negative voltage biased at the SS substrate can recover Δ VTH and reduced drain current of the driving TFT. The VTH of the TFT increased by 2.3 V under a gate bias of +15 V and a drain bias of +15 V at 65 °C applied for 3,500 s. The VTH decreased by -2.3 V and the drain current recovered 97% of its initial value under a substrate bias of -23 V at 65 °C applied for 3,500 s.
Asaad, Sameh W; Bellofatto, Ralph E; Brezzo, Bernard; Haymes, Charles L; Kapur, Mohit; Parker, Benjamin D; Roewer, Thomas; Tierno, Jose A
2014-01-28
A plurality of target field programmable gate arrays are interconnected in accordance with a connection topology and map portions of a target system. A control module is coupled to the plurality of target field programmable gate arrays. A balanced clock distribution network is configured to distribute a reference clock signal, and a balanced reset distribution network is coupled to the control module and configured to distribute a reset signal to the plurality of target field programmable gate arrays. The control module and the balanced reset distribution network are cooperatively configured to initiate and control a simulation of the target system with the plurality of target field programmable gate arrays. A plurality of local clock control state machines reside in the target field programmable gate arrays. The local clock state machines are configured to generate a set of synchronized free-running and stoppable clocks to maintain cycle-accurate and cycle-reproducible execution of the simulation of the target system. A method is also provided.
Gaub, Benjamin M.; Berry, Michael H.; Holt, Amy E.; Reiner, Andreas; Kienzler, Michael A.; Dolgova, Natalia; Nikonov, Sergei; Aguirre, Gustavo D.; Beltran, William A.; Flannery, John G.; Isacoff, Ehud Y.
2014-01-01
Most inherited forms of blindness are caused by mutations that lead to photoreceptor cell death but spare second- and third-order retinal neurons. Expression of the light-gated excitatory mammalian ion channel light-gated ionotropic glutamate receptor (LiGluR) in retinal ganglion cells (RGCs) of the retina degeneration (rd1) mouse model of blindness was previously shown to restore some visual functions when stimulated by UV light. Here, we report restored retinal function in visible light in rodent and canine models of blindness through the use of a second-generation photoswitch for LiGluR, maleimide-azobenzene-glutamate 0 with peak efficiency at 460 nm (MAG0460). In the blind rd1 mouse, multielectrode array recordings of retinal explants revealed robust and uniform light-evoked firing when LiGluR-MAG0460 was targeted to RGCs and robust but diverse activity patterns in RGCs when LiGluR-MAG0460 was targeted to ON-bipolar cells (ON-BCs). LiGluR-MAG0460 in either RGCs or ON-BCs of the rd1 mouse reinstated innate light-avoidance behavior and enabled mice to distinguish between different temporal patterns of light in an associative learning task. In the rod-cone dystrophy dog model of blindness, LiGluR-MAG0460 in RGCs restored robust light responses to retinal explants and intravitreal delivery of LiGluR and MAG0460 was well tolerated in vivo. The results in both large and small animal models of photoreceptor degeneration provide a path to clinical translation. PMID:25489083
Leaky Integrate and Fire Neuron by Charge-Discharge Dynamics in Floating-Body MOSFET.
Dutta, Sangya; Kumar, Vinay; Shukla, Aditya; Mohapatra, Nihar R; Ganguly, Udayan
2017-08-15
Neuro-biology inspired Spiking Neural Network (SNN) enables efficient learning and recognition tasks. To achieve a large scale network akin to biology, a power and area efficient electronic neuron is essential. Earlier, we had demonstrated an LIF neuron by a novel 4-terminal impact ionization based n+/p/n+ with an extended gate (gated-INPN) device by physics simulation. Excellent improvement in area and power compared to conventional analog circuit implementations was observed. In this paper, we propose and experimentally demonstrate a compact conventional 3-terminal partially depleted (PD) SOI- MOSFET (100 nm gate length) to replace the 4-terminal gated-INPN device. Impact ionization (II) induced floating body effect in SOI-MOSFET is used to capture LIF neuron behavior to demonstrate spiking frequency dependence on input. MHz operation enables attractive hardware acceleration compared to biology. Overall, conventional PD-SOI-CMOS technology enables very-large-scale-integration (VLSI) which is essential for biology scale (~10 11 neuron based) large neural networks.
1T Pixel Using Floating-Body MOSFET for CMOS Image Sensors.
Lu, Guo-Neng; Tournier, Arnaud; Roy, François; Deschamps, Benoît
2009-01-01
We present a single-transistor pixel for CMOS image sensors (CIS). It is a floating-body MOSFET structure, which is used as photo-sensing device and source-follower transistor, and can be controlled to store and evacuate charges. Our investigation into this 1T pixel structure includes modeling to obtain analytical description of conversion gain. Model validation has been done by comparing theoretical predictions and experimental results. On the other hand, the 1T pixel structure has been implemented in different configurations, including rectangular-gate and ring-gate designs, and variations of oxidation parameters for the fabrication process. The pixel characteristics are presented and discussed.
Lajnef, Nizar; Chakrabartty, Shantanu; Elvin, Niell; Elvin, Alex
2006-01-01
In this paper we describe an implementation of a novel fatigue monitoring sensor based on integration of piezoelectric transduction with floating gate avalanche injection. The miniaturized sensor enables continuous battery-less monitoring and time-to-failure predictions of biomechanical implants. Measured results from a fabricated prototype in a 0.5 microm CMOS process indicate that the device can compute cumulative statistics of electrical signals generated by piezoelectric transducer, while consuming less that 1 microW of power. The ultra-low power operation makes the sensor attractive for integration with poly-vinylidene difluoride (PVDF) based transducers that have already proven to be biocompatible.
NASA Astrophysics Data System (ADS)
Wei, Jiaxing; Liu, Siyang; Liu, Xiaoqiang; Sun, Weifeng; Liu, Yuwei; Liu, Xiaohong; Hou, Bo
2017-08-01
The endurance degradation mechanisms of p-channel floating gate flash memory device with two-transistor (2T) structure are investigated in detail in this work. With the help of charge pumping (CP) measurements and Sentaurus TCAD simulations, the damages in the drain overlap region along the tunnel oxide interface caused by band-to-band (BTB) tunneling programming and the damages in the channel region resulted from Fowler-Nordheim (FN) tunneling erasure are verified respectively. Furthermore, the lifetime model of endurance characteristic is extracted, which can extrapolate the endurance degradation tendency and predict the lifetime of the device.
A Radiation-Tolerant, Low-Power Non-Volatile Memory Based on Silicon Nanocrystal Quantum Dots
NASA Technical Reports Server (NTRS)
Bell, L. D.; Boer, E. A.; Ostraat, M. L.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.; deBlauwe, J.; Green, M. L.
2001-01-01
Nanocrystal nonvolatile floating-gate memories are a good candidate for space applications - initial results suggest they are fast, more reliable and consume less power than conventional floating gate memories. In the nanocrystal based NVM device, charge is not stored on a continuous polysilicon layer (so-called floating gate), but instead on a layer of discrete nanocrystals. Charge injection and storage in dense arrays of silicon nanocrystals in SiO2 is a critical aspect of the performance of potential nanocrystal flash memory structures. The ultimate goal for this class of devices is few- or single-electron storage in a small number of nanocrystal elements. In addition, the nanocrystal layer fabrication technique should be simple, 8-inch wafer compatible and well controlled in program/erase threshold voltage swing was seen during 100,000 program and erase cycles. Additional near-term goals for this project include extensive testing for radiation hardness and the development of artificial layered tunnel barrier heterostructures which have the potential for large speed enhancements for read/write of nanocrystal memory elements, compared with conventional flash devices. Additional information is contained in the original extended abstract.
NASA Astrophysics Data System (ADS)
Hamzah, Afiq; Ezaila Alias, N.; Ismail, Razali
2018-06-01
The aim of this study is to investigate the memory performances of gate-all-around floating gate (GAA-FG) memory cell implementing engineered tunnel barrier concept of variable oxide thickness (VARIOT) of low-k/high-k for several high-k (i.e., Si3N4, Al2O3, HfO2, and ZrO2) with low-k SiO2 using three-dimensional (3D) simulator Silvaco ATLAS. The simulation work is conducted by initially determining the optimized thickness of low-k/high-k barrier-stacked and extracting their Fowler–Nordheim (FN) coefficients. Based on the optimized parameters the device performances of GAA-FG for fast program operation and data retention are assessed using benchmark set by 6 and 8 nm SiO2 tunnel layer respectively. The programming speed has been improved and wide memory window with 30% increment from conventional SiO2 has been obtained using SiO2/Al2O3 tunnel layer due to its thin low-k dielectric thickness. Furthermore, given its high band edges only 1% of charge-loss is expected after 10 years of ‑3.6/3.6 V gate stress.
Son, Donghee; Koo, Ja Hoon; Song, Jun-Kyul; Kim, Jaemin; Lee, Mincheol; Shim, Hyung Joon; Park, Minjoon; Lee, Minbaek; Kim, Ji Hoon; Kim, Dae-Hyeong
2015-05-26
Electronics for wearable applications require soft, flexible, and stretchable materials and designs to overcome the mechanical mismatch between the human body and devices. A key requirement for such wearable electronics is reliable operation with high performance and robustness during various deformations induced by motions. Here, we present materials and device design strategies for the core elements of wearable electronics, such as transistors, charge-trap floating-gate memory units, and various logic gates, with stretchable form factors. The use of semiconducting carbon nanotube networks designed for integration with charge traps and ultrathin dielectric layers meets the performance requirements as well as reliability, proven by detailed material and electrical characterizations using statistics. Serpentine interconnections and neutral mechanical plane layouts further enhance the deformability required for skin-based systems. Repetitive stretching tests and studies in mechanics corroborate the validity of the current approaches.
Single ZnO nanowire-PZT optothermal field effect transistors.
Hsieh, Chun-Yi; Lu, Meng-Lin; Chen, Ju-Ying; Chen, Yung-Ting; Chen, Yang-Fang; Shih, Wan Y; Shih, Wei-Heng
2012-09-07
A new type of pyroelectric field effect transistor based on a composite consisting of single zinc oxide nanowire and lead zirconate titanate (ZnO NW-PZT) has been developed. Under infrared (IR) laser illumination, the transconductance of the ZnO NW can be modulated by optothermal gating. The drain current can be increased or decreased by IR illumination depending on the polarization orientation of the Pb(Zr(0.3)Ti(0.7))O(3) (PZT) substrate. Furthermore, by combining the photocurrent behavior in the UV range and the optothermal gating effect in the IR range, the wide spectrum of response of current by light offers a variety of opportunities for nanoscale optoelectronic devices.
Fully solution processed Al-TiO2-Si (MIS) structured photo-detector
NASA Astrophysics Data System (ADS)
Mondal, Sandip; Kumar, Arvind
2018-05-01
We demonstrate the fabrication of a high performance photo detector by fully solution processed technique. The detector is fabricated with photo sensitive, low temperature (200˚C) and sol-gel processed titanium dioxide (TiO2) dielectric material on silicon substrate in the form of MIS structure with top aluminum gate. The optical detection experiment is performed on Al—TiO2—Si (MIS) device by measuring the capacitance—voltage (CV at 100 kHz) curve within the visible region of light (365 — 700 nm). The presence of light shift the flat band voltage (VFB) from 290 mV to 360 mV due to the generation of photo activated charge carriers by UV (365 nm) and white light, respectively. Moreover, the generation of the charge carrier increases drastically by the combination of UV and white, which resulting as a very large shift (600 mV) in the VFB. The entire experiment was performed in normal lab conditions with open air environment, without any clean room facility.
Nonvolatile floating gate organic memory device based on pentacene/CdSe quantum dot heterojuction
NASA Astrophysics Data System (ADS)
Shin, Ik-Soo; Kim, Jung-Min; Jeun, Jun-Ho; Yoo, Seok-Hyun; Ge, Ziyi; Hong, Jong-In; Ho Bang, Jin; Kim, Yong-Sang
2012-04-01
An organic floating-gate memory device using CdSe quantum dots (QDs) as a charge-trapping element was fabricated. CdSe QDs were localized beneath a pentacene without any tunneling insulator, and the QD layer played a role as hole-trapping sites. The band bending formed at the junction between pentacene and QD layers inhibited back-injection of holes trapped in CdSe into pentacene, which appeared as a hysteretic capacitance-voltage response during the operation of the device. Nearly, 60% of trapped charge was sustained even after 104 s in programmed state, and this long retention time can be potentially useful in practical applications of non-volatile memory.
Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory
NASA Astrophysics Data System (ADS)
Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu
2015-07-01
Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.
Synergistic High Charge-Storage Capacity for Multi-level Flexible Organic Flash Memory.
Kang, Minji; Khim, Dongyoon; Park, Won-Tae; Kim, Jihong; Kim, Juhwan; Noh, Yong-Young; Baeg, Kang-Jun; Kim, Dong-Yu
2015-07-23
Electret and organic floating-gate memories are next-generation flash storage mediums for printed organic complementary circuits. While each flash memory can be easily fabricated using solution processes on flexible plastic substrates, promising their potential for on-chip memory organization is limited by unreliable bit operation and high write loads. We here report that new architecture could improve the overall performance of organic memory, and especially meet high storage for multi-level operation. Our concept depends on synergistic effect of electrical characterization in combination with a polymer electret (poly(2-vinyl naphthalene) (PVN)) and metal nanoparticles (Copper). It is distinguished from mostly organic nano-floating-gate memories by using the electret dielectric instead of general tunneling dielectric for additional charge storage. The uniform stacking of organic layers including various dielectrics and poly(3-hexylthiophene) (P3HT) as an organic semiconductor, followed by thin-film coating using orthogonal solvents, greatly improve device precision despite easy and fast manufacture. Poly(vinylidene fluoride-trifluoroethylene) [P(VDF-TrFE)] as high-k blocking dielectric also allows reduction of programming voltage. The reported synergistic organic memory devices represent low power consumption, high cycle endurance, high thermal stability and suitable retention time, compared to electret and organic nano-floating-gate memory devices.
Light-Gated Memristor with Integrated Logic and Memory Functions.
Tan, Hongwei; Liu, Gang; Yang, Huali; Yi, Xiaohui; Pan, Liang; Shang, Jie; Long, Shibing; Liu, Ming; Wu, Yihong; Li, Run-Wei
2017-11-28
Memristive devices are able to store and process information, which offers several key advantages over the transistor-based architectures. However, most of the two-terminal memristive devices have fixed functions once made and cannot be reconfigured for other situations. Here, we propose and demonstrate a memristive device "memlogic" (memory logic) as a nonvolatile switch of logic operations integrated with memory function in a single light-gated memristor. Based on nonvolatile light-modulated memristive switching behavior, a single memlogic cell is able to achieve optical and electrical mixed basic Boolean logic of reconfigurable "AND", "OR", and "NOT" operations. Furthermore, the single memlogic cell is also capable of functioning as an optical adder and digital-to-analog converter. All the memlogic outputs are memristive for in situ data storage due to the nonvolatile resistive switching and persistent photoconductivity effects. Thus, as a memdevice, the memlogic has potential for not only simplifying the programmable logic circuits but also building memristive multifunctional optoelectronics.
Defense Industrial Base Assessment: U.S. Integrated Circuit Design and Fabrication Capability
2009-05-01
in the U.S for the period 2003-2006, with projections to 2011.6 The resulting draft OTE survey was field tested for accuracy and usability with a...custom application specific integrated circuits (ASICs) to field programmable gate arrays (FPGAs). Companies of all sizes can manufacture these IC...able to design one-time Electronically Programmable Gate Arrays (EPGAs) while nine are able to design Field Programmable Gate Arrays (FPGAs). Eight
50 CFR 665.813 - Western Pacific longline fishing restrictions.
Code of Federal Regulations, 2011 CFR
2011-10-01
... any float lines less than 20 meters in length or light sticks. As used in this paragraph “float line” means a line used to suspend the main longline beneath a float and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically powered light that is...
50 CFR 665.813 - Western Pacific longline fishing restrictions.
Code of Federal Regulations, 2010 CFR
2010-10-01
... any float lines less than 20 meters in length or light sticks. As used in this paragraph “float line” means a line used to suspend the main longline beneath a float and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically powered light that is...
50 CFR 665.813 - Western Pacific longline fishing restrictions.
Code of Federal Regulations, 2012 CFR
2012-10-01
... any float lines less than 20 meters in length or light sticks. As used in this paragraph “float line” means a line used to suspend the main longline beneath a float and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically powered light that is...
RHrFPGA Radiation-Hardened Re-programmable Field-Programmable Gate Array
NASA Technical Reports Server (NTRS)
Sanders, A. B.; LaBel, K. A.; McCabe, J. F.; Gardner, G. A.; Lintz, J.; Ross, C.; Golke, K.; Burns, B.; Carts, M. A.; Kim, H. S.
2004-01-01
Viewgraphs on the development of the Radiation-Hardened Re-programmable Field-Programmable Gate Array (RHrFPGA) are presented. The topics include: 1) Radiation Test Suite; 2) Testing Interface; 3) Test Configuration; 4) Facilities; 5) Test Programs; 6) Test Procedure; and 7) Test Results. A summary of heavy ion and proton testing is also included.
Hope, Andrew; Gubbins, Simon; Sanders, Christopher; Denison, Eric; Barber, James; Stubbins, Francesca; Baylis, Matthew; Carpenter, Simon
2015-04-22
The response of Culicoides biting midges (Diptera: Ceratopogonidae) to artificial light sources has led to the use of light-suction traps in surveillance programmes. Recent integration of light emitting diodes (LED) in traps improves flexibility in trapping through reduced power requirements and also allows the wavelength of light used for trapping to be customized. This study investigates the responses of Culicoides to LED light-suction traps emitting different wavelengths of light to make recommendations for use in surveillance. The abundance and diversity of Culicoides collected using commercially available traps fitted with Light Emitting Diode (LED) platforms emitting ultraviolet (UV) (390 nm wavelength), blue (430 nm), green (570 nm), yellow (590 nm), red (660 nm) or white light (425 nm - 750 nm with peaks at 450 nm and 580 nm) were compared. A Centre for Disease Control (CDC) UV light-suction trap was also included within the experimental design which was fitted with a 4 watt UV tube (320-420 nm). Generalised linear models with negative binomial error structure and log-link function were used to compare trap abundance according to LED colour, meteorological conditions and seasonality. The experiment was conducted over 49 nights with 42,766 Culicoides caught in 329 collections. Culicoides obsoletus Meigen and Culicoides scoticus Downes and Kettle responded indiscriminately to all wavelengths of LED used with the exception of red which was significantly less attractive. In contrast, Culicoides dewulfi Goetghebuer and Culicoides pulicaris Linnaeus were found in significantly greater numbers in the green LED trap than in the UV LED trap. The LED traps collected significantly fewer Culicoides than the standard CDC UV light-suction trap. Catches of Culicoides were reduced in LED traps when compared to the standard CDC UV trap, however, their reduced power requirement and small size fulfils a requirement for trapping in logistically challenging areas or where many traps are deployed at a single site. Future work should combine light wavelengths to improve trapping sensitivity and potentially enable direct comparisons with collections from hosts, although this may ultimately require different forms of baits to be developed.
Wasteway, intake side. The floatoperated radial gates are housed behind ...
Wasteway, intake side. The float-operated radial gates are housed behind the concrete (below water level), view to the northwest - Wellton-Mohawk Irrigation System, Wasteway No. 1, Wellton-Mohawk Canal, North side of Wellton-Mohawk Canal, bounded by Gila River to North & the Union Pacific Railroad & Gila Mountains to south, Wellton, Yuma County, AZ
Design of transient light signal simulator based on FPGA
NASA Astrophysics Data System (ADS)
Kang, Jing; Chen, Rong-li; Wang, Hong
2014-11-01
A design scheme of transient light signal simulator based on Field Programmable gate Array (FPGA) was proposed in this paper. Based on the characteristics of transient light signals and measured feature points of optical intensity signals, a fitted curve was created in MATLAB. And then the wave data was stored in a programmed memory chip AT29C1024 by using SUPERPRO programmer. The control logic was realized inside one EP3C16 FPGA chip. Data readout, data stream cache and a constant current buck regulator for powering high-brightness LEDs were all controlled by FPGA. A 12-Bit multiplying CMOS digital-to-analog converter (DAC) DAC7545 and an amplifier OPA277 were used to convert digital signals to voltage signals. A voltage-controlled current source constituted by a NPN transistor and an operational amplifier controlled LED array diming to achieve simulation of transient light signal. LM3405A, 1A Constant Current Buck Regulator for Powering LEDs, was used to simulate strong background signal in space. Experimental results showed that the scheme as a transient light signal simulator can satisfy the requests of the design stably.
Refrigerant directly cooled capacitors
Hsu, John S [Oak Ridge, TN; Seiber, Larry E [Oak Ridge, TN; Marlino, Laura D [Oak Ridge, TN; Ayers, Curtis W [Kingston, TN
2007-09-11
The invention is a direct contact refrigerant cooling system using a refrigerant floating loop having a refrigerant and refrigeration devices. The cooling system has at least one hermetic container disposed in the refrigerant floating loop. The hermetic container has at least one electronic component selected from the group consisting of capacitors, power electronic switches and gating signal module. The refrigerant is in direct contact with the electronic component.
The floating-gate non-volatile semiconductor memory--from invention to the digital age.
Sze, S M
2012-10-01
In the past 45 years (from 1967 to 2012), the non-volatile semiconductor memory (NVSM) has emerged from a floating-gate concept to the prime technology driver of the largest industry in the world-the electronics industry. In this paper, we briefly review the historical development of NVSM and project its future trends to the year 2020. In addition, we consider NVSM's wide-range of applications from the digital cellular phone to tablet computer to digital television. As the device dimension is scaled down to the deca-nanometer regime, we expect that many innovations will be made to meet the scaling challenges, and NVSM-inspired technology will continue to enrich and improve our lives for decades to come.
Zhang, Lu; Ouyang, Xing; Shao, Xiaopeng; Zhao, Jian
2016-06-27
Performance degradation induced by the DC components at the output of real-time analogue-to-digital converter (ADC) is experimentally investigated for optical fast-OFDM receiver. To compensate this degradation, register transfer level (RTL) circuits for real-time digital DC blocker with 20GS/s throughput are proposed and implemented in field programmable gate array (FPGA). The performance of the proposed real-time digital DC blocker is experimentally investigated in a 15Gb/s optical fast-OFDM system with intensity modulation and direct detection over 40 km standard single-mode fibre. The results show that the fixed-point DC blocker has negligible performance penalty compared to the offline floating point one, and can overcome the error floor of the fast OFDM receiver caused by the DC components from the real-time ADC output.
NASA Technical Reports Server (NTRS)
Moon, Dong-Il; Han, Jin-Woo; Meyyappan, Meyya
2016-01-01
The gate all around transistor is investigated through experiment. The suspended silicon nanowire for the next generation is fabricated on bulk substrate by plasma etching method. The scallop pattern generated by Bosch process is utilized to form a floating silicon nanowire. By combining anisotropic and istropic silicon etch process, the shape of nanowire is accurately controlled. From the suspended nanowire, the gate all around transistor is demonstrated. As the silicon nanowire is fully surrounded by the gate, the device shows excellent electrostatic characteristics.
Programmable ion-sensitive transistor interfaces. II. Biomolecular sensing and manipulation.
Jayant, Krishna; Auluck, Kshitij; Funke, Mary; Anwar, Sharlin; Phelps, Joshua B; Gordon, Philip H; Rajwade, Shantanu R; Kan, Edwin C
2013-07-01
The chemoreceptive neuron metal-oxide-semiconductor transistor described in the preceding paper is further used to monitor the adsorption and interaction of DNA molecules and subsequently manipulate the adsorbed biomolecules with injected static charge. Adsorption of DNA molecules onto poly-L-lysine-coated sensing gates (SGs) modulates the floating gate (FG) potential ψ(O), which is reflected as a threshold voltage shift measured from the control gate (CG) V(th_CG). The asymmetric capacitive coupling between the CG and SG to the FG results in V(th_CG) amplification. The electric field in the SG oxide E(SG_ox) is fundamentally different when we drive the current readout with V(CG) and V(ref) (i.e., the potential applied to the CG and reference electrode, respectively). The V(CG)-driven readout induces a larger E(SG_ox), leading to a larger V(th_CG) shift when DNA is present. Simulation studies indicate that the counterion screening within the DNA membrane is responsible for this effect. The DNA manipulation mechanism is enabled by tunneling electrons (program) or holes (erase) onto FGs to produce repulsive or attractive forces. Programming leads to repulsion and eventual desorption of DNA, while erasing reestablishes adsorption. We further show that injected holes or electrons prior to DNA addition either aids or disrupts the immobilization process, which can be used for addressable sensor interfaces. To further substantiate DNA manipulation, we used impedance spectroscopy with a split ac-dc technique to reveal the net interface impedance before and after charge injection.
NASA Astrophysics Data System (ADS)
Adams, J. H.; Ahmad, S.; Albert, J.-N.; Allard, D.; Anchordoqui, L.; Andreev, V.; Anzalone, A.; Arai, Y.; Asano, K.; Ave Pernas, M.; Baragatti, P.; Barrillon, P.; Batsch, T.; Bayer, J.; Bechini, R.; Belenguer, T.; Bellotti, R.; Belov, K.; Berlind, A. A.; Bertaina, M.; Biermann, P. L.; Biktemerova, S.; Blaksley, C.; Blanc, N.; Błȩcki, J.; Blin-Bondil, S.; Blümer, J.; Bobik, P.; Bogomilov, M.; Bonamente, M.; Briggs, M. S.; Briz, S.; Bruno, A.; Cafagna, F.; Campana, D.; Capdevielle, J.-N.; Caruso, R.; Casolino, M.; Cassardo, C.; Castellinic, G.; Catalano, C.; Catalano, G.; Cellino, A.; Chikawa, M.; Christl, M. J.; Cline, D.; Connaughton, V.; Conti, L.; Cordero, G.; Crawford, H. J.; Cremonini, R.; Csorna, S.; Dagoret-Campagne, S.; de Castro, A. J.; De Donato, C.; de la Taille, C.; De Santis, C.; del Peral, L.; Dell'Oro, A.; De Simone, N.; Di Martino, M.; Distratis, G.; Dulucq, F.; Dupieux, M.; Ebersoldt, A.; Ebisuzaki, T.; Engel, R.; Falk, S.; Fang, K.; Fenu, F.; Fernández-Gómez, I.; Ferrarese, S.; Finco, D.; Flamini, M.; Fornaro, C.; Franceschi, A.; Fujimoto, J.; Fukushima, M.; Galeotti, P.; Garipov, G.; Geary, J.; Gelmini, G.; Giraudo, G.; Gonchar, M.; González Alvarado, C.; Gorodetzky, P.; Guarino, F.; Guzmán, A.; Hachisu, Y.; Harlov, B.; Haungs, A.; Hernández Carretero, J.; Higashide, K.; Ikeda, D.; Ikeda, H.; Inoue, N.; Inoue, S.; Insolia, A.; Isgrò, F.; Itow, Y.; Joven, E.; Judd, E. G.; Jung, A.; Kajino, F.; Kajino, T.; Kaneko, I.; Karadzhov, Y.; Karczmarczyk, J.; Karus, M.; Katahira, K.; Kawai, K.; Kawasaki, Y.; Keilhauer, B.; Khrenov, B. A.; Kim, J.-S.; Kim, S.-W.; Kim, S.-W.; Kleifges, M.; Klimov, P. A.; Kolev, D.; Kreykenbohm, I.; Kudela, K.; Kurihara, Y.; Kusenko, A.; Kuznetsov, E.; Lacombe, M.; Lachaud, C.; Lee, J.; Licandro, J.; Lim, H.; López, F.; Maccarone, M. C.; Mannheim, K.; Maravilla, D.; Marcelli, L.; Marini, A.; Martinez, O.; Masciantonio, G.; Mase, K.; Matev, R.; Medina-Tanco, G.; Mernik, T.; Miyamoto, H.; Miyazaki, Y.; Mizumoto, Y.; Modestino, G.; Monaco, A.; Monnier-Ragaigne, D.; Morales de los Ríos, J. A.; Moretto, C.; Morozenko, V. S.; Mot, B.; Murakami, T.; Murakami, M. Nagano; Nagata, M.; Nagataki, S.; Nakamura, T.; Napolitano, T.; Naumov, D.; Nava, R.; Neronov, A.; Nomoto, K.; Nonaka, T.; Ogawa, T.; Ogio, S.; Ohmori, H.; Olinto, A. V.; Orleański, P.; Osteria, G.; Panasyuk, M. I.; Parizot, E.; Park, I. H.; Park, H. W.; Pastircak, B.; Patzak, T.; Paul, T.; Pennypacker, C.; Perez Cano, S.; Peter, T.; Picozza, P.; Pierog, T.; Piotrowski, L. W.; Piraino, S.; Plebaniak, Z.; Pollini, A.; Prat, P.; Prévôt, G.; Prieto, H.; Putis, M.; Reardon, P.; Reyes, M.; Ricci, M.; Rodríguez, I.; Rodríguez Frías, M. D.; Ronga, F.; Roth, M.; Rothkaehl, H.; Roudil, G.; Rusinov, I.; Rybczyński, M.; Sabau, M. D.; Sáez-Cano, G.; Sagawa, H.; Saito, A.; Sakaki, N.; Sakata, M.; Salazar, H.; Sánchez, S.; Santangelo, A.; Santiago Crúz, L.; Sanz Palomino, M.; Saprykin, O.; Sarazin, F.; Sato, H.; Sato, M.; Schanz, T.; Schieler, H.; Scotti, V.; Segreto, A.; Selmane, S.; Semikoz, D.; Serra, M.; Sharakin, S.; Shibata, T.; Shimizu, H. M.; Shinozaki, K.; Shirahama, T.; Siemieniec-Oziȩbło, G.; Silva López, H. H.; Sledd, J.; Słomińska, K.; Sobey, A.; Sugiyama, T.; Supanitsky, D.; Suzuki, M.; Szabelska, B.; Szabelski, J.; Tajima, F.; Tajima, N.; Tajima, T.; Takahashi, Y.; Takami, H.; Takeda, M.; Takizawa, Y.; Tenzer, C.; Tibolla, O.; Tkachev, L.; Tokuno, H.; Tomida, T.; Tone, N.; Toscano, S.; Trillaud, F.; Tsenov, R.; Tsunesada, Y.; Tsuno, K.; Tymieniecka, T.; Uchihori, Y.; Unger, M.; Vaduvescu, O.; Valdés-Galicia, J. F.; Vallania, P.; Valore, L.; Vankova, G.; Vigorito, C.; Villaseñor, L.; von Ballmoos, P.; Wada, S.; Watanabe, J.; Watanabe, S.; Watts, J.; Weber, M.; Weiler, T. J.; Wibig, T.; Wiencke, L.; Wille, M.; Wilms, J.; Włodarczyk, Z.; Yamamoto, T.; Yamamoto, Y.; Yang, J.; Yano, H.; Yashin, I. V.; Yonetoku, D.; Yoshida, K.; Yoshida, S.; Young, R.; Zotov, M. Yu.; Zuccaro Marchi, A.
2015-11-01
EUSO-Balloon is a pathfinder for JEM-EUSO, the Extreme Universe Space Observatory which is to be hosted on-board the International Space Station. As JEM-EUSO is designed to observe Ultra-High Energy Cosmic Rays (UHECR)-induced Extensive Air Showers (EAS) by detecting their ultraviolet light tracks "from above", EUSO-Balloon is a nadir-pointing UV telescope too. With its Fresnel Optics and Photo-Detector Module, the instrument monitors a 50 km2 ground surface area in a wavelength band of 290-430 nm, collecting series of images at a rate of 400,000 frames/sec. The objectives of the balloon demonstrator are threefold: a) perform a full end-to-end test of a JEM-EUSO prototype consisting of all the main subsystems of the space experiment, b) measure the effective terrestrial UV background, with a spatial and temporal resolution relevant for JEM-EUSO. c) detect tracks of ultraviolet light from near space for the first time. The latter is a milestone in the development of UHECR science, paving the way for any future space-based UHECR observatory. On August 25, 2014, EUSO-Balloon was launched from Timmins Stratospheric Balloon Base (Ontario, Canada) by the balloon division of the French Space Agency CNES. From a float altitude of 38 km, the instrument operated during the entire astronomical night, observing UV-light from a variety of ground-covers and from hundreds of simulated EASs, produced by flashers and a laser during a two-hour helicopter under-flight.
Hussain, Mahmood Irtiza; Petrasiunas, Matthew Joseph; Bentley, Christopher D B; Taylor, Richard L; Carvalho, André R R; Hope, Joseph J; Streed, Erik W; Lobino, Mirko; Kielpinski, David
2016-07-25
Trapped ions are one of the most promising approaches for the realization of a universal quantum computer. Faster quantum logic gates could dramatically improve the performance of trapped-ion quantum computers, and require the development of suitable high repetition rate pulsed lasers. Here we report on a robust frequency upconverted fiber laser based source, able to deliver 2.5 ps ultraviolet (UV) pulses at a stabilized repetition rate of 300.00000 MHz with an average power of 190 mW. The laser wavelength is resonant with the strong transition in Ytterbium (Yb+) at 369.53 nm and its repetition rate can be scaled up using high harmonic mode locking. We show that our source can produce arbitrary pulse patterns using a programmable pulse pattern generator and fast modulating components. Finally, simulations demonstrate that our laser is capable of performing resonant, temperature-insensitive, two-qubit quantum logic gates on trapped Yb+ ions faster than the trap period and with fidelity above 99%.
49 CFR 234.219 - Gate arm lights and light cable.
Code of Federal Regulations, 2014 CFR
2014-10-01
... 49 Transportation 4 2014-10-01 2014-10-01 false Gate arm lights and light cable. 234.219 Section....219 Gate arm lights and light cable. Each gate arm light shall be maintained in such condition to be properly visible to approaching highway users. Lights and light wire shall be secured to the gate arm. ...
49 CFR 234.219 - Gate arm lights and light cable.
Code of Federal Regulations, 2013 CFR
2013-10-01
... 49 Transportation 4 2013-10-01 2013-10-01 false Gate arm lights and light cable. 234.219 Section....219 Gate arm lights and light cable. Each gate arm light shall be maintained in such condition to be properly visible to approaching highway users. Lights and light wire shall be secured to the gate arm. ...
49 CFR 234.219 - Gate arm lights and light cable.
Code of Federal Regulations, 2012 CFR
2012-10-01
... 49 Transportation 4 2012-10-01 2012-10-01 false Gate arm lights and light cable. 234.219 Section....219 Gate arm lights and light cable. Each gate arm light shall be maintained in such condition to be properly visible to approaching highway users. Lights and light wire shall be secured to the gate arm. ...
Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors.
Gao, Yi; Lei, Shuijin; Kang, Tingting; Fei, Linfeng; Mak, Chee-Leung; Yuan, Jian; Zhang, Mingguang; Li, Shaojuan; Bao, Qiaoliang; Zeng, Zhongming; Wang, Zhao; Gu, Haoshuang; Zhang, Kai
2018-06-15
Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS 3 , FePS 3 , etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS 3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW -1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS 3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.
Bias-switchable negative and positive photoconductivity in 2D FePS3 ultraviolet photodetectors
NASA Astrophysics Data System (ADS)
Gao, Yi; Lei, Shuijin; Kang, Tingting; Fei, Linfeng; Mak, Chee-Leung; Yuan, Jian; Zhang, Mingguang; Li, Shaojuan; Bao, Qiaoliang; Zeng, Zhongming; Wang, Zhao; Gu, Haoshuang; Zhang, Kai
2018-06-01
Metal-phosphorus-trichalcogenides (MPTs), represented by NiPS3, FePS3, etc, are newly developed 2D wide-bandgap semiconductors and have been proposed as excellent candidates for ultraviolet (UV) optoelectronics. In spite of having superior advantages for solar-blind UV photodetectors, including those free of surface trap states, being highly compatible with versatile integrations as well as having an appropriate band gap, to date relevant study is rare. In this work, the photoresponse characteristic of UV detectors based on few-layer FePS3 has been comprehensively investigated. The responsivity of the photodetector, which is observed to be determined by bias gate voltage, may achieve as high as 171.6 mAW‑1 under the illumination of 254 nm weak light, which is comparable to most commercial UV detectors. Notably, both negative and positive photoconductivities exist in the FePS3 photodetectors and can be controllably switched with bias voltage. The eminent and novel photoresponse property paves the way for the further development and practical use of 2D MPTs in high-performance UV photodetections.
NASA Astrophysics Data System (ADS)
Chiu, Shengfen; Xu, Yue; Ji, Xiaoli; Yan, Feng
2016-12-01
This paper investigates the impact of post-metallization annealing (PMA) in pure nitrogen ambient on the reliability of 65 nm NOR-type floating-gate flash memory devices. The experimental results show that, with PMA process, the cycling performance of flash cells, especially for the erasing speed is obviously degraded compared to that without PMA. It is found that the bulk oxide traps and tunnel oxide/Si interface traps are significantly increased with PMA treatment. The water/moisture residues left in the interlayer dielectric layers diffuse to tunnel oxide during PMA process is considered to be responsible for these traps generation, which further enhances the degradation of erase performance. Skipping PMA treatment is proposed to suppress the water diffusion effect on erase performance degradation of flash cells.
Wire like link for cycle reproducible and cycle accurate hardware accelerator
Asaad, Sameh; Kapur, Mohit; Parker, Benjamin D
2015-04-07
First and second field programmable gate arrays are provided which implement first and second blocks of a circuit design to be simulated. The field programmable gate arrays are operated at a first clock frequency and a wire like link is provided to send a plurality of signals between them. The wire like link includes a serializer, on the first field programmable gate array, to serialize the plurality of signals; a deserializer on the second field programmable gate array, to deserialize the plurality of signals; and a connection between the serializer and the deserializer. The serializer and the deserializer are operated at a second clock frequency, greater than the first clock frequency, and the second clock frequency is selected such that latency of transmission and reception of the plurality of signals is less than the period corresponding to the first clock frequency.
Field programmable gate arrays: Evaluation report for space-flight application
NASA Technical Reports Server (NTRS)
Sandoe, Mike; Davarpanah, Mike; Soliman, Kamal; Suszko, Steven; Mackey, Susan
1992-01-01
Field Programmable Gate Arrays commonly called FPGA's are the newer generation of field programmable devices and offer more flexibility in the logic modules they incorporate and in how they are interconnected. The flexibility, the number of logic building blocks available, and the high gate densities achievable are why users find FPGA's attractive. These attributes are important in reducing product development costs and shortening the development cycle. The aerospace community is interested in incorporating this new generation of field programmable technology in space applications. To this end, a consortium was formed to evaluate the quality, reliability, and radiation performance of FPGA's. This report presents the test results on FPGA parts provided by ACTEL Corporation.
NASA Astrophysics Data System (ADS)
Chen, Ying-Chih; Huang, Chun-Yuan; Yu, Hsin-Chieh; Su, Yan-Kuin
2012-08-01
The nonvolatile memory thin film transistors (TFTs) using a core/shell CdSe/ZnS quantum dot (QD)-poly(methyl methacrylate) (PMMA) composite layer as the floating gate have been demonstrated, with the device configuration of n+-Si gate/SiO2 insulator/QD-PMMA composite layer/pentacene channel/Au source-drain being proposed. To achieve the QD-PMMA composite layer, a two-step spin coating technique was used to successively deposit QD-PMMA composite and PMMA on the insulator. After the processes, the variation of crystal quality and surface morphology of the subsequent pentacene films characterized by x-ray diffraction spectra and atomic force microscopy was correlated to the two-step spin coating. The crystalline size of pentacene was improved from 147.9 to 165.2 Å, while the degree of structural disorder was decreased from 4.5% to 3.1% after the adoption of this technique. In pentacene-based TFTs, the improvement of the performance was also significant, besides the appearances of strong memory characteristics. The memory behaviors were attributed to the charge storage/discharge effect in QD-PMMA composite layer. Under the programming and erasing operations, programmable memory devices with the memory window (Δ Vth) = 23 V and long retention time were obtained.
Design of an Oximeter Based on LED-LED Configuration and FPGA Technology
Stojanovic, Radovan; Karadaglic, Dejan
2013-01-01
A fully digital photoplethysmographic (PPG) sensor and actuator has been developed. The sensing circuit uses one Light Emitting Diode (LED) for emitting light into human tissue and one LED for detecting the reflectance light from human tissue. A Field Programmable Gate Array (FPGA) is used to control the LEDs and determine the PPG and Blood Oxygen Saturation (SpO2). The configurations with two LEDs and four LEDs are developed for measuring PPG signal and Blood Oxygen Saturation (SpO2). N-LEDs configuration is proposed for multichannel SpO2 measurements. The approach resulted in better spectral sensitivity, increased and adjustable resolution, reduced noise, small size, low cost and low power consumption. PMID:23291575
Light-Driven Transport of a Liquid Marble with and against Surface Flows.
Kavokine, Nikita; Anyfantakis, Manos; Morel, Mathieu; Rudiuk, Sergii; Bickel, Thomas; Baigl, Damien
2016-09-05
Liquid marbles, that is, liquid drops coated by a hydrophobic powder, do not wet any solid or liquid substrate, making their transport and manipulation both highly desirable and challenging. Herein, we describe the light-driven transport of floating liquid marbles and emphasize a surprising motion behavior. Liquid marbles are deposited on a water solution containing photosensitive surfactants. Irradiation of the solution generates photoreversible Marangoni flows that transport the liquid marbles toward UV light and away from blue light when the thickness of the liquid substrate is large enough (Marangoni regime). Below a critical thickness, the liquid marbles move in the opposite direction to that of the surface flow at a speed increasing with decreasing liquid thickness (anti-Marangoni). We demonstrate that the anti-Marangoni motion is driven by the free surface deformation, which propels the non-wetting marble against the surface flow. We call this behavior "slide effect". © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Ban, Takahiko; Uenuma, Mutsunori; Migita, Shinji; Okamoto, Naofumi; Ishikawa, Yasuaki; Uraoka, Yukiharu; Yamashita, Ichiro; Yamamoto, Shin-ichi
2018-06-01
By synthesizing AuS nanoparticles (NPs) with spherical shell protein (ferritin) and using a V-groove, a one-dimensional array of NPs was formed at the bottom of the V-groove. It has been reported that AuS NPs are converted to Au NPs by UV/ozone treatment. Floating gate memory (FGM) was fabricated by applying this one-dimensional array to V-grooved junctionless (JL) FETs, V-grooved nin-like-type FETs, and pip-like-type FETs, which are fine FETs. In JL-FETs, it is considered that conversion occurred because of good charge storage efficiency, and operation in the opposite direction to normal FGM operation was seen. In the nin-like and pip-like types devices, the same operation as in conventional FGM was shown, and the width of the memory window was about the same size as when one electron entered one NP. The one-dimensional arrangement of the metal NPs used in this study is considered to be applicable to various fields of nanotechnology.
Li, Bingyi; Chen, Liang; Wei, Chunpeng; Xie, Yizhuang; Chen, He; Yu, Wenyue
2017-01-01
With the development of satellite load technology and very large scale integrated (VLSI) circuit technology, onboard real-time synthetic aperture radar (SAR) imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS) SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT), which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array—application-specific integrated circuit (FPGA-ASIC) hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS) technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384. PMID:28672813
Yang, Chen; Li, Bingyi; Chen, Liang; Wei, Chunpeng; Xie, Yizhuang; Chen, He; Yu, Wenyue
2017-06-24
With the development of satellite load technology and very large scale integrated (VLSI) circuit technology, onboard real-time synthetic aperture radar (SAR) imaging systems have become a solution for allowing rapid response to disasters. A key goal of the onboard SAR imaging system design is to achieve high real-time processing performance with severe size, weight, and power consumption constraints. In this paper, we analyse the computational burden of the commonly used chirp scaling (CS) SAR imaging algorithm. To reduce the system hardware cost, we propose a partial fixed-point processing scheme. The fast Fourier transform (FFT), which is the most computation-sensitive operation in the CS algorithm, is processed with fixed-point, while other operations are processed with single precision floating-point. With the proposed fixed-point processing error propagation model, the fixed-point processing word length is determined. The fidelity and accuracy relative to conventional ground-based software processors is verified by evaluating both the point target imaging quality and the actual scene imaging quality. As a proof of concept, a field- programmable gate array-application-specific integrated circuit (FPGA-ASIC) hybrid heterogeneous parallel accelerating architecture is designed and realized. The customized fixed-point FFT is implemented using the 130 nm complementary metal oxide semiconductor (CMOS) technology as a co-processor of the Xilinx xc6vlx760t FPGA. A single processing board requires 12 s and consumes 21 W to focus a 50-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384.
Sboui, Mouheb; Nsib, Mohamed Faouzi; Rayes, Ali; Swaminathan, Meenakshisundaram; Houas, Ammar
2017-10-01
A novel photocatalyst based on TiO 2 -PANI composite supported on small pieces of cork has been reported. It was prepared by simple impregnation method of the polyaniline (PANI)-modified TiO 2 on cork. The TiO 2 -PANI/Cork catalyst shows the unique feature of floating on the water surface. The as-synthesized catalyst was characterized by X-ray diffraction (XRD), scanning electron micrograph (SEM), transmission electron microscopy (TEM), thermogravimetric analysis (TGA), Fourier transform infrared spectroscopy (FT-IR), UV-vis diffuse reflectance spectra (UV-vis DRS) and the Brunauer-Emmett-Teller (BET) surface area analysis. Characterization suggested the formation of anatase highly dispersed on the cork surface. The prepared floating photocatalyst showed high efficiency for the degradation of methyl orange dye and other organic pollutants under solar irradiation and constrained conditions, i.e., no-stirring and no-oxygenation. The TiO 2 -PANI/Cork floating photocatalyst can be reused for at least four consecutive times without significant decrease of the degradation efficiency. Copyright © 2017. Published by Elsevier B.V.
NASA Astrophysics Data System (ADS)
Rodenko, Olga; Fodgaard, Henrik; Tidemand-Lichtenberg, Peter; Pedersen, Christian
2017-02-01
In immunoassay analyzers for in-vitro diagnostics, Xenon flash lamps have been widely used as excitation light sources. Recent advancements in UV LED technology and its advantages over the flash lamps such as smaller footprint, better wall-plug efficiency, narrow emission spectrum, and no significant afterglow, have made them attractive light sources for gated detection systems. In this paper, we report on the implementation of a 340 nm UV LED based time-resolved fluorescence system based on europium chelate as a fluorescent marker. The system performance was tested with the immunoassay based on the cardiac marker, TnI. The same signal-to-noise ratio as for the flash lamp based system was obtained, operating the LED below specified maximum current. The background counts of the system and its main contributors were measured and analyzed. The background of the system of the LED based unit was improved by 39% compared to that of the Xenon flash lamp based unit, due to the LEDs narrower emission spectrum and longer pulse width. Key parameters of the LED system are discussed to further optimize the signal-to-noise ratio and signal-to-background, and hence the sensitivity of the instrument.
G4-FETs as Universal and Programmable Logic Gates
NASA Technical Reports Server (NTRS)
Johnson, Travis; Fijany, Amir; Mojarradi, Mohammad; Vatan, Farrokh; Toomarian, Nikzad; Kolawa, Elizabeth; Cristoloveanu, Sorin; Blalock, Benjamin
2007-01-01
An analysis of a patented generic silicon- on-insulator (SOI) electronic device called a G4-FET has revealed that the device could be designed to function as a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer discrete components than are required for conventional transistor-based circuits performing the same logic functions. A G4-FET is a combination of a junction field-effect transistor (JFET) and a metal oxide/semiconductor field-effect transistor (MOSFET) superimposed in a single silicon island and can therefore be regarded as two transistors sharing the same body. A G4-FET can also be regarded as a single transistor having four gates: two side junction-based gates, a top MOS gate, and a back gate activated by biasing of the SOI substrate. Each of these gates can be used to control the conduction characteristics of the transistor; this possibility creates new options for designing analog, radio-frequency, mixed-signal, and digital circuitry. With proper choice of the specific dimensions for the gates, channels, and ancillary features of the generic G4-FET, the device could be made to function as a three-input, one-output logic gate. As illustrated by the truth table in the top part of the figure, the behavior of this logic gate would be the inverse (the NOT) of that of a majority gate. In other words, the device would function as a NOT-majority gate. By simply adding an inverter, one could obtain a majority gate. In contrast, to construct a majority gate in conventional complementary metal oxide/semiconductor (CMOS) circuitry, one would need four three-input AND gates and a four-input OR gate, altogether containing 32 transistors.
Fabrication of arrayed Si nanowire-based nano-floating gate memory devices on flexible plastics.
Yoon, Changjoon; Jeon, Youngin; Yun, Junggwon; Kim, Sangsig
2012-01-01
Arrayed Si nanowire (NW)-based nano-floating gate memory (NFGM) devices with Pt nanoparticles (NPs) embedded in Al2O3 gate layers are successfully constructed on flexible plastics by top-down approaches. Ten arrayed Si NW-based NFGM devices are positioned on the first level. Cross-linked poly-4-vinylphenol (PVP) layers are spin-coated on them as isolation layers between the first and second level, and another ten devices are stacked on the cross-linked PVP isolation layers. The electrical characteristics of the representative Si NW-based NFGM devices on the first and second levels exhibit threshold voltage shifts, indicating the trapping and detrapping of electrons in their NPs nodes. They have an average threshold voltage shift of 2.5 V with good retention times of more than 5 x 10(4) s. Moreover, most of the devices successfully retain their electrical characteristics after about one thousand bending cycles. These well-arrayed and stacked Si NW-based NFGM devices demonstrate the potential of nanowire-based devices for large-scale integration.
N-Channel field-effect transistors with floating gates for extracellular recordings.
Meyburg, Sven; Goryll, Michael; Moers, Jürgen; Ingebrandt, Sven; Böcker-Meffert, Simone; Lüth, Hans; Offenhäusser, Andreas
2006-01-15
A field-effect transistor (FET) for recording extracellular signals from electrogenic cells is presented. The so-called floating gate architecture combines a complementary metal oxide semiconductor (CMOS)-type n-channel transistor with an independent sensing area. This concept allows the transistor and sensing area to be optimised separately. The devices are robust and can be reused several times. The noise level of the devices was smaller than of comparable non-metallised gate FETs. In addition to the usual drift of FET devices, we observed a long-term drift that has to be controlled for future long-term measurements. The device performance for extracellular signal recording was tested using embryonic rat cardiac myocytes cultured on fibronectin-coated chips. The extracellular cell signals were recorded before and after the addition of the cardioactive isoproterenol. The signal shapes of the measured action potentials were comparable to the non-metallised gate FETs previously used in similar experiments. The fabrication of the devices involved the process steps of standard CMOS that were necessary to create n-channel transistors. The implementation of a complete CMOS process would facilitate the integration of the logical circuits necessary for signal pre-processing on a chip, which is a prerequisite for a greater number of sensor spots in future layouts.
Automatic Digital Hardware Synthesis
1990-09-01
VHDL to PALASM, a hardware synthesis language. The PALASM description is then directly implemented into a field programmable gate array (FPGAI using...process of translating VHDL to PALASM, a hardware synthesis language. The PALASM description is then directly implemented into a field programmable gate...allows the engineer to use VHDL to create and validate a design, and then to implement it in a gate array. The development of software o translate VHDL
Low-voltage all-inorganic perovskite quantum dot transistor memory
NASA Astrophysics Data System (ADS)
Chen, Zhiliang; Zhang, Yating; Zhang, Heng; Yu, Yu; Song, Xiaoxian; Zhang, Haiting; Cao, Mingxuan; Che, Yongli; Jin, Lufan; Li, Yifan; Li, Qingyan; Dai, Haitao; Yang, Junbo; Yao, Jianquan
2018-05-01
An all-inorganic cesium lead halide quantum dot (QD) based Au nanoparticle (NP) floating-gate memory with a solution processed layer-by-layer method is demonstrated. Easy synthesis at room temperature and excellent stability make all-inorganic CsPbBr3 perovskite QDs suitable as a semiconductor layer in low voltage nonvolatile transistor memory. The bipolarity of QDs has both electrons and holes stored in the Au NP floating gate, resulting in bidirectional shifts of initial threshold voltage according to the applied programing and erasing pulses. Under low operation voltage (±5 V), the memory achieved a great memory window (˜2.4 V), long retention time (>105 s), and stable endurance properties after 200 cycles. So the proposed memory device based on CsPbBr3 perovskite QDs has a great potential in the flash memory market.
Paranoia.Ada: A diagnostic program to evaluate Ada floating-point arithmetic
NASA Technical Reports Server (NTRS)
Hjermstad, Chris
1986-01-01
Many essential software functions in the mission critical computer resource application domain depend on floating point arithmetic. Numerically intensive functions associated with the Space Station project, such as emphemeris generation or the implementation of Kalman filters, are likely to employ the floating point facilities of Ada. Paranoia.Ada appears to be a valuabe program to insure that Ada environments and their underlying hardware exhibit the precision and correctness required to satisfy mission computational requirements. As a diagnostic tool, Paranoia.Ada reveals many essential characteristics of an Ada floating point implementation. Equipped with such knowledge, programmers need not tremble before the complex task of floating point computation.
NASA Astrophysics Data System (ADS)
Shkolyar, S.; Eshelman, E.; Farmer, J. D.; Hamilton, D.; Daly, M. G.; Youngbull, C.
2017-12-01
The Mars 2020 mission will analyze samples in situ and identify any that could have preserved biosignatures in ancient habitable environments for later return to Earth. Highest-priority targeted samples include aqueously formed sedimentary lithologies containing fossil biosignatures as aromatic carbon (kerogen). In this study, we analyze non-extracted, naturally preserved kerogen in a diverse suite of realistic Mars analogs using combined UV excitation time-gated (UV-TG) Raman and laser-induced fluorescence spectroscopy. We interrogated kerogen and its host matrix in samples to: (1) explore the capabilities of UV-TG Raman and fluorescence spectroscopy for detecting kerogen in high-priority targets in the search for a Martian fossil record; (2) assess the effectiveness of time-gating and UV laser wavelength in reducing fluorescence; and (3) identify sample-specific issues which could challenge rover-based identifications of kerogen using UV-TG Raman spectroscopy. We found that ungated UV Raman is suited to identify diagnostic kerogen Raman bands without interfering fluorescence and that fluorescence features indicating kerogen are detectable. These data highlight the value of using both co-located Raman and fluorescence data sets together to strengthen the confidence of kerogen detection as a potential biosignature and are obtainable by SHERLOC onboard Mars 2020.
NASA Astrophysics Data System (ADS)
Bostrom, G.; Atkinson, D.; Rice, A.
2015-04-01
Cavity ringdown spectroscopy (CRDS) uses the exponential decay constant of light exiting a high-finesse resonance cavity to determine analyte concentration, typically via absorption. We present a high-throughput data acquisition system that determines the decay constant in near real time using the discrete Fourier transform algorithm on a field programmable gate array (FPGA). A commercially available, high-speed, high-resolution, analog-to-digital converter evaluation board system is used as the platform for the system, after minor hardware and software modifications. The system outputs decay constants at maximum rate of 4.4 kHz using an 8192-point fast Fourier transform by processing the intensity decay signal between ringdown events. We present the details of the system, including the modifications required to adapt the evaluation board to accurately process the exponential waveform. We also demonstrate the performance of the system, both stand-alone and incorporated into our existing CRDS system. Details of FPGA, microcontroller, and circuitry modifications are provided in the Appendix and computer code is available upon request from the authors.
NASA Astrophysics Data System (ADS)
Lee, Ji-hyun; Chae, Byeong-Kyu; Kim, Joong-Jeong; Lee, Sun Young; Park, Chan Gyung
2015-01-01
Dopant control becomes more difficult and critical as silicon devices become smaller. We observed the dopant distribution in a thermally annealed polysilicon gate using Transmission Electron Microscopy (TEM) and Atom probe tomography (APT). Phosphorus was doped at the silicon-nitride-diffusion-barrier-layer-covered polycrystalline silicon gate. Carbon also incorporated at the gate for the enhancement of operation uniformity. The impurity distribution was observed using atom probe tomography. The carbon atoms had segregated at grain boundaries and suppressed silicon grain growth. Phosphorus atoms, on the other hand, tended to pile-up at the interface. A 1-nm-thick diffusion barrier effectively blocked P atom out-diffusion. [Figure not available: see fulltext.
49 CFR 234.219 - Gate arm lights and light cable.
Code of Federal Regulations, 2010 CFR
2010-10-01
... 49 Transportation 4 2010-10-01 2010-10-01 false Gate arm lights and light cable. 234.219 Section... Maintenance, Inspection, and Testing Maintenance Standards § 234.219 Gate arm lights and light cable. Each gate arm light shall be maintained in such condition to be properly visible to approaching highway...
49 CFR 234.219 - Gate arm lights and light cable.
Code of Federal Regulations, 2011 CFR
2011-10-01
... 49 Transportation 4 2011-10-01 2011-10-01 false Gate arm lights and light cable. 234.219 Section... Maintenance, Inspection, and Testing Maintenance Standards § 234.219 Gate arm lights and light cable. Each gate arm light shall be maintained in such condition to be properly visible to approaching highway...
Jin, Dayong; Piper, James A
2011-03-15
Application of standard immuno-fluorescence microscopy techniques for detection of rare-event microorganisms in dirty samples is severely limited by autofluorescence of nontarget organisms or other debris. Time-gated detection using gateable array detectors in combination with microsecond-lifetime luminescent bioprobes (usually lanthanide-based) is highly effective in suppression of (nanosecond-lifetime) autofluorescence background; however, the complexity and cost of the instrumentation is a major barrier to application of these techniques to routine diagnostics. We report a practical, low-cost implementation of time-gated luminescence detection in a standard epifluorescence microscope which has been modified to include a high-power pulsed UV light-emitting diode (LED) illumination source and a standard fast chopper inserted in the focal plane behind a microscope eyepiece. Synchronization of the pulsed illumination/gated detection cycle is driven from the clock signal from the chopper. To achieve time-gated luminescence intensities sufficient for direct visual observation, we use high cycle rates, up to 2.5 kHz, taking advantage of the fast switching capabilities of the LED source. We have demonstrated real-time direct-visual inspection of europium-labeled Giardia lamblia cysts in dirty samples and Cryptosporidium parvum oocysts in fruit juice concentrate. The signal-to-background ratio has been enhanced by a factor of 18 in time-gated mode. The availability of low-cost, robust time-gated microscopes will aid development of long-lifetime luminescence bioprobes and accelerate their application in routine laboratory diagnostics.
NASA Technical Reports Server (NTRS)
Mitchell, J.; Jones, K.
1986-01-01
High current and voltage controlled remotely. Remote Power Conroller includes two series-connected banks of parallel-connected MOSFET's to withstand high current and voltage. Voltage sharing between switch banks, low-impedance, gate-drive circuits used. Provided controlled range for turn on. Individually trimmable to insure simultaneous switching within few nanoseconds during both turn on and turn off. Control circuit for each switch bank and over-current trip circuit float independently and supplied power via transformer T1 from inverter. Control of floating stages by optocouplers.
Event-driven charge-coupled device design and applications therefor
NASA Technical Reports Server (NTRS)
Doty, John P. (Inventor); Ricker, Jr., George R. (Inventor); Burke, Barry E. (Inventor); Prigozhin, Gregory Y. (Inventor)
2005-01-01
An event-driven X-ray CCD imager device uses a floating-gate amplifier or other non-destructive readout device to non-destructively sense a charge level in a charge packet associated with a pixel. The output of the floating-gate amplifier is used to identify each pixel that has a charge level above a predetermined threshold. If the charge level is above a predetermined threshold the charge in the triggering charge packet and in the charge packets from neighboring pixels need to be measured accurately. A charge delay register is included in the event-driven X-ray CCD imager device to enable recovery of the charge packets from neighboring pixels for accurate measurement. When a charge packet reaches the end of the charge delay register, control logic either dumps the charge packet, or steers the charge packet to a charge FIFO to preserve it if the charge packet is determined to be a packet that needs accurate measurement. A floating-diffusion amplifier or other low-noise output stage device, which converts charge level to a voltage level with high precision, provides final measurement of the charge packets. The voltage level is eventually digitized by a high linearity ADC.
Competition for light and nutrients in layered communities of aquatic plants.
van Gerven, Luuk P A; de Klein, Jeroen J M; Gerla, Daan J; Kooi, Bob W; Kuiper, Jan J; Mooij, Wolf M
2015-07-01
Dominance of free-floating plants poses a threat to biodiversity in many freshwater ecosystems. Here we propose a theoretical framework to understand this dominance, by modeling the competition for light and nutrients in a layered community of floating and submerged plants. The model shows that at high supply of light and nutrients, floating plants always dominate due to their primacy for light, even when submerged plants have lower minimal resource requirements. The model also shows that floating-plant dominance cannot be an alternative stable state in light-limited environments but only in nutrient-limited environments, depending on the plants' resource consumption traits. Compared to unlayered communities, the asymmetry in competition for light-coincident with symmetry in competition for nutrients-leads to fundamentally different results: competition outcomes can no longer be predicted from species traits such as minimal resource requirements ([Formula: see text] rule) and resource consumption. Also, the same two species can, depending on the environment, coexist or be alternative stable states. When applied to two common plant species in temperate regions, both the model and field data suggest that floating-plant dominance is unlikely to be an alternative stable state.
A Discussion of Using a Reconfigurable Processor to Implement the Discrete Fourier Transform
NASA Technical Reports Server (NTRS)
White, Michael J.
2004-01-01
This paper presents the design and implementation of the Discrete Fourier Transform (DFT) algorithm on a reconfigurable processor system. While highly applicable to many engineering problems, the DFT is an extremely computationally intensive algorithm. Consequently, the eventual goal of this work is to enhance the execution of a floating-point precision DFT algorithm by off loading the algorithm from the computing system. This computing system, within the context of this research, is a typical high performance desktop computer with an may of field programmable gate arrays (FPGAs). FPGAs are hardware devices that are configured by software to execute an algorithm. If it is desired to change the algorithm, the software is changed to reflect the modification, then download to the FPGA, which is then itself modified. This paper will discuss methodology for developing the DFT algorithm to be implemented on the FPGA. We will discuss the algorithm, the FPGA code effort, and the results to date.
Code of Federal Regulations, 2014 CFR
2014-10-01
... no light sticks are used. As used in this definition, “float line” means a line used to suspend the main longline beneath a float, and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically-powered light that is affixed underwater to the longline...
Code of Federal Regulations, 2013 CFR
2013-10-01
... no light sticks are used. As used in this definition, “float line” means a line used to suspend the main longline beneath a float, and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically-powered light that is affixed underwater to the longline...
Code of Federal Regulations, 2012 CFR
2012-10-01
... no light sticks are used. As used in this definition, “float line” means a line used to suspend the main longline beneath a float, and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically-powered light that is affixed underwater to the longline...
NASA Astrophysics Data System (ADS)
Chambonneau, Maxime; Souiki-Figuigui, Sarra; Chiquet, Philippe; Della Marca, Vincenzo; Postel-Pellerin, Jérémy; Canet, Pierre; Portal, Jean-Michel; Grojo, David
2017-04-01
We demonstrate that infrared femtosecond laser pulses with intensity above the two-photon ionization threshold of crystalline silicon induce charge transport through the tunnel oxide in floating gate Metal-Oxide-Semiconductor transistor devices. With repeated irradiations of Flash memory cells, we show how the laser-produced free-electrons naturally redistribute on both sides of the tunnel oxide until the electric field of the transistor is suppressed. This ability enables us to determine in a nondestructive, rapid and contactless way the flat band and the neutral threshold voltages of the tested device. The physical mechanisms including nonlinear ionization, quantum tunneling of free-carriers, and flattening of the band diagram are discussed for interpreting the experiments. The possibility to control the carriers in memory transistors with ultrashort pulses holds promises for fast and remote device analyses (reliability, security, and defectivity) and for considerable developments in the growing field of ultrafast microelectronics.
A fast and low-power microelectromechanical system-based non-volatile memory device
Lee, Sang Wook; Park, Seung Joo; Campbell, Eleanor E. B.; Park, Yung Woo
2011-01-01
Several new generation memory devices have been developed to overcome the low performance of conventional silicon-based flash memory. In this study, we demonstrate a novel non-volatile memory design based on the electromechanical motion of a cantilever to provide fast charging and discharging of a floating-gate electrode. The operation is demonstrated by using an electromechanical metal cantilever to charge a floating gate that controls the charge transport through a carbon nanotube field-effect transistor. The set and reset currents are unchanged after more than 11 h constant operation. Over 500 repeated programming and erasing cycles were demonstrated under atmospheric conditions at room temperature without degradation. Multinary bit programming can be achieved by varying the voltage on the cantilever. The operation speed of the device is faster than a conventional flash memory and the power consumption is lower than other memory devices. PMID:21364559
Models for Total-Dose Radiation Effects in Non-Volatile Memory
DOE Office of Scientific and Technical Information (OSTI.GOV)
Campbell, Philip Montgomery; Wix, Steven D.
The objective of this work is to develop models to predict radiation effects in non- volatile memory: flash memory and ferroelectric RAM. In flash memory experiments have found that the internal high-voltage generators (charge pumps) are the most sensitive to radiation damage. Models are presented for radiation effects in charge pumps that demonstrate the experimental results. Floating gate models are developed for the memory cell in two types of flash memory devices by Intel and Samsung. These models utilize Fowler-Nordheim tunneling and hot electron injection to charge and erase the floating gate. Erase times are calculated from the models andmore » compared with experimental results for different radiation doses. FRAM is less sensitive to radiation than flash memory, but measurements show that above 100 Krad FRAM suffers from a large increase in leakage current. A model for this effect is developed which compares closely with the measurements.« less
A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement
Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong
2016-01-01
Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates. PMID:26763827
Study of the enhancement-mode AlGaN/GaN high electron mobility transistor with split floating gates
NASA Astrophysics Data System (ADS)
Wang, Hui; Wang, Ning; Jiang, Ling-Li; Zhao, Hai-Yue; Lin, Xin-Peng; Yu, Hong-Yu
2017-11-01
In this work, the charge storage based split floating gates (FGs) enhancement mode (E-mode) AlGaN/GaN high electron mobility transistors (HEMTs) are studied. The simulation results reveal that under certain density of two dimensional electron gas, the variation tendency of the threshold voltage (Vth) with the variation of the blocking dielectric thickness depends on the FG charge density. It is found that when the length sum and isolating spacing sum of the FGs both remain unchanged, the Vth shall decrease with the increasing FGs number but maintaining the device as E-mode. It is also reported that for the FGs HEMT, the failure of a FG will lead to the decrease of Vth as well as the increase of drain current, and the failure probability can be improved significantly with the increase of FGs number.
A wearable multiplexed silicon nonvolatile memory array using nanocrystal charge confinement.
Kim, Jaemin; Son, Donghee; Lee, Mincheol; Song, Changyeong; Song, Jun-Kyul; Koo, Ja Hoon; Lee, Dong Jun; Shim, Hyung Joon; Kim, Ji Hoon; Lee, Minbaek; Hyeon, Taeghwan; Kim, Dae-Hyeong
2016-01-01
Strategies for efficient charge confinement in nanocrystal floating gates to realize high-performance memory devices have been investigated intensively. However, few studies have reported nanoscale experimental validations of charge confinement in closely packed uniform nanocrystals and related device performance characterization. Furthermore, the system-level integration of the resulting devices with wearable silicon electronics has not yet been realized. We introduce a wearable, fully multiplexed silicon nonvolatile memory array with nanocrystal floating gates. The nanocrystal monolayer is assembled over a large area using the Langmuir-Blodgett method. Efficient particle-level charge confinement is verified with the modified atomic force microscopy technique. Uniform nanocrystal charge traps evidently improve the memory window margin and retention performance. Furthermore, the multiplexing of memory devices in conjunction with the amplification of sensor signals based on ultrathin silicon nanomembrane circuits in stretchable layouts enables wearable healthcare applications such as long-term data storage of monitored heart rates.
Choi, Sungjin; Lee, Junhyuk; Kim, Donghyoun; Oh, Seulki; Song, Wangyu; Choi, Seonjun; Choi, Eunsuk; Lee, Seung-Beck
2011-12-01
We report on the fabrication and capacitance-voltage characteristics of double layer nickel-silicide nanocrystals with Si3N4 interlayer tunnel barrier for nano-floating gate memory applications. Compared with devices using SiO2 interlayer, the use of Si3N4 interlayer separation reduced the average size (4 nm) and distribution (+/- 2.5 nm) of NiSi2 nanocrystal (NC) charge traps by more than 50% and giving a two fold increase in NC density to 2.3 x 10(12) cm(-2). The increased density and reduced NC size distribution resulted in a significantly decrease in the distribution of the device C-V characteristics. For each program voltage, the distribution of the shift in the threshold voltage was reduced by more than 50% on average to less than 0.7 V demonstrating possible multi-level-cell operation.
NASA Astrophysics Data System (ADS)
Li, S.; Guérin, D.; Lenfant, S.; Lmimouni, K.
2018-02-01
Pentacene based double nano-floating gate memories (NFGM) by using gold nanoparticles (Au NPs) and reduced graphene oxide (rGO) sheets as charge trapping layers are prepared and demonstrated. Particularly, the NFGM chemically treated by 2,3,4,5,6-pentafluorobenzenethiol (PFBT) self-assembled monolayers (SAM) exhibits excellent memory performances, including high mobility of 0.23 cm2V-1s-1, the large memory window of 51 V, and the stable retention property more than 108 s. Comparing the performances of NFGM without treating with PFBT SAM, the improving performances of the memory devices by SAM modification are explained by the increase of charge injection, which could be further investigated by XPS and UPS. In particular, the results highlight the utility of SAM modulations and controlling of charge transport in the development of organic transistor memories.
NASA Technical Reports Server (NTRS)
Bell, L. D.; Boer, E.; Ostraat, M.; Brongersma, M. L.; Flagan, R. C.; Atwater, H. A.
2000-01-01
NASA requirements for computing and memory for microspacecraft emphasize high density, low power, small size, and radiation hardness. The distributed nature of storage elements in nanocrystal floating-gate memories leads to intrinsic fault tolerance and radiation hardness. Conventional floating-gate non-volatile memories are more susceptible to radiation damage. Nanocrystal-based memories also offer the possibility of faster, lower power operation. In the pursuit of filling these requirements, the following tasks have been accomplished: (1) Si nanocrystal charging has been accomplished with conducting-tip AFM; (2) Both individual nanocrystals on an oxide surface and nanocrystals formed by implantation have been charged; (3) Discharging is consistent with tunneling through a field-lowered oxide barrier; (4) Modeling of the response of the AFM to trapped charge has allowed estimation of the quantity of trapped charge; and (5) Initial attempts to fabricate competitive nanocrystal non-volatile memories have been extremely successful.
Fly-By-Light/Power-By-Wire Fault-Tolerant Fiber-Optic Backplane
NASA Technical Reports Server (NTRS)
Malekpour, Mahyar R.
2002-01-01
The design and development of a fault-tolerant fiber-optic backplane to demonstrate feasibility of such architecture is presented. The simulation results of test cases on the backplane in the advent of induced faults are presented, and the fault recovery capability of the architecture is demonstrated. The architecture was designed, developed, and implemented using the Very High Speed Integrated Circuits (VHSIC) Hardware Description Language (VHDL). The architecture was synthesized and implemented in hardware using Field Programmable Gate Arrays (FPGA) on multiple prototype boards.
Nanowire FET Based Neural Element for Robotic Tactile Sensing Skin
Taube Navaraj, William; García Núñez, Carlos; Shakthivel, Dhayalan; Vinciguerra, Vincenzo; Labeau, Fabrice; Gregory, Duncan H.; Dahiya, Ravinder
2017-01-01
This paper presents novel Neural Nanowire Field Effect Transistors (υ-NWFETs) based hardware-implementable neural network (HNN) approach for tactile data processing in electronic skin (e-skin). The viability of Si nanowires (NWs) as the active material for υ-NWFETs in HNN is explored through modeling and demonstrated by fabricating the first device. Using υ-NWFETs to realize HNNs is an interesting approach as by printing NWs on large area flexible substrates it will be possible to develop a bendable tactile skin with distributed neural elements (for local data processing, as in biological skin) in the backplane. The modeling and simulation of υ-NWFET based devices show that the overlapping areas between individual gates and the floating gate determines the initial synaptic weights of the neural network - thus validating the working of υ-NWFETs as the building block for HNN. The simulation has been further extended to υ-NWFET based circuits and neuronal computation system and this has been validated by interfacing it with a transparent tactile skin prototype (comprising of 6 × 6 ITO based capacitive tactile sensors array) integrated on the palm of a 3D printed robotic hand. In this regard, a tactile data coding system is presented to detect touch gesture and the direction of touch. Following these simulation studies, a four-gated υ-NWFET is fabricated with Pt/Ti metal stack for gates, source and drain, Ni floating gate, and Al2O3 high-k dielectric layer. The current-voltage characteristics of fabricated υ-NWFET devices confirm the dependence of turn-off voltages on the (synaptic) weight of each gate. The presented υ-NWFET approach is promising for a neuro-robotic tactile sensory system with distributed computing as well as numerous futuristic applications such as prosthetics, and electroceuticals. PMID:28979183
System and Method for Scan Range Gating
NASA Technical Reports Server (NTRS)
Lindemann, Scott (Inventor); Zuk, David M. (Inventor)
2017-01-01
A system for scanning light to define a range gated signal includes a pulsed coherent light source that directs light into the atmosphere, a light gathering instrument that receives the light modified by atmospheric backscatter and transfers the light onto an image plane, a scanner that scans collimated light from the image plane to form a range gated signal from the light modified by atmospheric backscatter, a control circuit that coordinates timing of a scan rate of the scanner and a pulse rate of the pulsed coherent light source so that the range gated signal is formed according to a desired range gate, an optical device onto which an image of the range gated signal is scanned, and an interferometer to which the image of the range gated signal is directed by the optical device. The interferometer is configured to modify the image according to a desired analysis.
Shkolyar, Svetlana; Eshelman, Evan J; Farmer, Jack D; Hamilton, David; Daly, Michael G; Youngbull, Cody
2018-04-01
The Mars 2020 mission will analyze samples in situ and identify any that could have preserved biosignatures in ancient habitable environments for later return to Earth. Highest priority targeted samples include aqueously formed sedimentary lithologies. On Earth, such lithologies can contain fossil biosignatures as aromatic carbon (kerogen). In this study, we analyzed nonextracted kerogen in a diverse suite of natural, complex samples using colocated UV excitation (266 nm) time-gated (UV-TG) Raman and laser-induced fluorescence spectroscopies. We interrogated kerogen and its host matrix in samples to (1) explore the capabilities of UV-TG Raman and fluorescence spectroscopies for detecting kerogen in high-priority targets in the search for possible biosignatures on Mars; (2) assess the effectiveness of time gating and UV laser wavelength in reducing fluorescence in Raman spectra; and (3) identify sample-specific issues that could challenge rover-based identifications of kerogen using UV-TG Raman spectroscopy. We found that ungated UV Raman spectroscopy is suited to identify diagnostic kerogen Raman bands without interfering fluorescence and that UV fluorescence spectroscopy is suited to identify kerogen. These results highlight the value of combining colocated Raman and fluorescence spectroscopies, similar to those obtainable by SHERLOC on Mars 2020, to strengthen the confidence of kerogen detection as a potential biosignature in complex natural samples. Key Words: Raman spectroscopy-Laser-induced fluorescence spectroscopy-Mars Sample Return-Mars 2020 mission-Kerogen-Biosignatures. Astrobiology 18, 431-453.
50 CFR 665.813 - Western Pacific longline fishing restrictions.
Code of Federal Regulations, 2014 CFR
2014-10-01
... lines less than 20 meters in length or light sticks. As used in this paragraph “float line” means a line used to suspend the main longline beneath a float and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically powered light that is affixed...
50 CFR 665.813 - Western Pacific longline fishing restrictions.
Code of Federal Regulations, 2013 CFR
2013-10-01
... lines less than 20 meters in length or light sticks. As used in this paragraph “float line” means a line used to suspend the main longline beneath a float and “light stick” means any type of light emitting device, including any fluorescent “glow bead,” chemical, or electrically powered light that is affixed...
NASA Astrophysics Data System (ADS)
Liu, Yongxun; Guo, Ruofeng; Kamei, Takahiro; Matsukawa, Takashi; Endo, Kazuhiko; O'uchi, Shinichi; Tsukada, Junichi; Yamauchi, Hiromi; Ishikawa, Yuki; Hayashida, Tetsuro; Sakamoto, Kunihiro; Ogura, Atsushi; Masahara, Meishoku
2012-06-01
The floating-gate (FG)-type metal-oxide-semiconductor (MOS) capacitors with planar (planar-MOS) and three-dimensional (3D) nanosize triangular cross-sectional tunnel areas (3D-MOS) have successfully been fabricated by introducing rapid thermal oxidation (RTO) and postdeposition annealing (PDA), and their electrical characteristics between the control gate (CG) and FG have been systematically compared. It was experimentally found in both planar- and 3D-MOS capacitors that the uniform and higher breakdown voltages are obtained by introducing RTO owing to the high-quality thermal oxide formation on the surface and etched edge regions of the n+ polycrystalline silicon (poly-Si) FG, and the leakage current is highly suppressed after PDA owing to the improved quality of the tetraethylorthosilicate (TEOS) silicon dioxide (SiO2) between CG and FG. Moreover, a lower breakdown voltage between CG and FG was obtained in the fabricated 3D-MOS capacitors as compared with that of planar-MOS capacitors thanks to the enhanced local electric field at the tips of triangular tunnel areas. The developed nanosize triangular cross-sectional tunnel area is useful for the fabrication of low operating voltage flash memories.
2016-02-01
system consists of a high-fidelity hardware simulation using field programmable gate arrays (FPGAs), with a set of runtime services (ConcreteWare...perimeter protection, patch, and pray” is not aligned with the threat. Programmers will not bail us out of this situation (by writing defect free code...hosted on a Field Programmable Gate Array (FPGA), with a set of runtime services (concreteware) running on the hardware. Secure applications can be
A Lithography-Free and Field-Programmable Photonic Metacanvas.
Dong, Kaichen; Hong, Sukjoon; Deng, Yang; Ma, He; Li, Jiachen; Wang, Xi; Yeo, Junyeob; Wang, Letian; Lou, Shuai; Tom, Kyle B; Liu, Kai; You, Zheng; Wei, Yang; Grigoropoulos, Costas P; Yao, Jie; Wu, Junqiao
2018-02-01
The unique correspondence between mathematical operators and photonic elements in wave optics enables quantitative analysis of light manipulation with individual optical devices. Phase-transition materials are able to provide real-time reconfigurability of these devices, which would create new optical functionalities via (re)compilation of photonic operators, as those achieved in other fields such as field-programmable gate arrays (FPGA). Here, by exploiting the hysteretic phase transition of vanadium dioxide, an all-solid, rewritable metacanvas on which nearly arbitrary photonic devices can be rapidly and repeatedly written and erased is presented. The writing is performed with a low-power laser and the entire process stays below 90 °C. Using the metacanvas, dynamic manipulation of optical waves is demonstrated for light propagation, polarization, and reconstruction. The metacanvas supports physical (re)compilation of photonic operators akin to that of FPGA, opening up possibilities where photonic elements can be field programmed to deliver complex, system-level functionalities. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Wang, Q.; Song, Z. T.; Liu, W. L.; Lin, C. L.; Wang, T. H.
2004-05-01
Monolayer-isolated silver (Ag) nanodots with the average diameter down to 7 nm are synthesized on Al 2O 3/Si substrate by vacuum electron-beam evaporation followed by annealing at 400 °C in N 2 ambient. Metal-insulator-silicon (MIS) structures with Ag nanodots embedded in Al 2O 3 gate dielectric are fabricated. Clear electron storage effect with the flatband voltage shift of 1.3 eV is observed through capacitance-conductance and conductance-voltage measurements. Our results demonstrate the feasibility of applying Ag nanodots for nanocrystal floating-gate memory devices.
Design of a Ferroelectric Programmable Logic Gate Array
NASA Technical Reports Server (NTRS)
MacLeod, Todd C.; Ho, Fat Duen
2003-01-01
A programmable logic gate array has been designed utilizing ferroelectric field effect transistors. The design has only a small number of gates, but this could be scaled up to a more useful size. Using FFET's in a logic array gives several advantages. First, it allows real-time programmability to the array to give high speed reconfiguration. It also allows the array to be configured nearly an unlimited number of times, unlike a FLASH FPGA. Finally, the Ferroelectric Programmable Logic Gate Array (FPLGA) can be implemented using a smaller number of transistors because of the inherent logic characteristics of an FFET. The device was only designed and modeled using Spice models of the circuit, including the FFET. The actual device was not produced. The design consists of a small array of NAND and NOR logic gates. Other gates could easily be produced. They are linked by FFET's that control the logic flow. Timing and logic tables have been produced showing the array can produce a variety of logic combinations at a real time usable speed. This device could be a prototype for a device that could be put into imbedded systems that need the high speed of hardware implementation of logic and the complexity to need to change the logic algorithm. Because of the non-volatile nature of the FFET, it would also be useful in situations that needed to program a logic array once and use it repeatedly after the power has been shut off.
A CDMA system implementation with dimming control for visible light communication
NASA Astrophysics Data System (ADS)
Chen, Danyang; Wang, Jianping; Jin, Jianli; Lu, Huimin; Feng, Lifang
2018-04-01
Visible light communication (VLC), using solid-state lightings to transmit information, has become a complement technology to wireless radio communication. As a realistic multiple access scheme for VLC system, code division multiple access (CDMA) has attracted more and more attentions in recent years. In this paper, we address and implement an improved CDMA scheme for VLC system. The simulation results reveal that the improved CDMA scheme not only supports multi-users' transmission but also maintains dimming value at about 50% and enhances the system efficiency. It can also realize the flexible dimming control by adjusting some parameters of system structure, which rarely affects the system BER performance. A real-time experimental VLC system with improved CDMA scheme is performed based on field programmable gate array (FPGA), reaching a good BER performance.
Tomography and Purification of the Temporal-Mode Structure of Quantum Light
NASA Astrophysics Data System (ADS)
Ansari, Vahid; Donohue, John M.; Allgaier, Markus; Sansoni, Linda; Brecht, Benjamin; Roslund, Jonathan; Treps, Nicolas; Harder, Georg; Silberhorn, Christine
2018-05-01
High-dimensional quantum information processing promises capabilities beyond the current state of the art, but addressing individual information-carrying modes presents a significant experimental challenge. Here we demonstrate effective high-dimensional operations in the time-frequency domain of nonclassical light. We generate heralded photons with tailored temporal-mode structures through the pulse shaping of a broadband parametric down-conversion pump. We then implement a quantum pulse gate, enabled by dispersion-engineered sum-frequency generation, to project onto programmable temporal modes, reconstructing the quantum state in seven dimensions. We also manipulate the time-frequency structure by selectively removing temporal modes, explicitly demonstrating the effectiveness of engineered nonlinear processes for the mode-selective manipulation of quantum states.
2016-05-01
A9 CPU and 15 W for the i7 CPU. A method of accelerating this computation is by using a customized hardware unit called a field- programmable gate...implementation of custom logic to accelerate com- putational workloads. This FPGA fabric, in addition to the standard programmable logic, contains 220...chip; field- programmable gate array Daniel Gebhardt U U U U 18 (619) 553-2786 INITIAL DISTRIBUTION 84300 Library (2) 85300 Archive/Stock (1
2016-05-01
A9 CPU and 15 W for the i7 CPU. A method of accelerating this computation is by using a customized hardware unit called a field- programmable gate...implementation of custom logic to accelerate com- putational workloads. This FPGA fabric, in addition to the standard programmable logic, contains 220...chip; field- programmable gate array Daniel Gebhardt U U U U 18 (619) 553-2786 INITIAL DISTRIBUTION 84300 Library (2) 85300 Archive/Stock (1
ERIC Educational Resources Information Center
Meyer-Base, U.; Vera, A.; Meyer-Base, A.; Pattichis, M. S.; Perry, R. J.
2010-01-01
In this paper, an innovative educational approach to introducing undergraduates to both digital signal processing (DSP) and field programmable gate array (FPGA)-based design in a one-semester course and laboratory is described. While both DSP and FPGA-based courses are currently present in different curricula, this integrated approach reduces the…
Evaluation of the FIR Example using Xilinx Vivado High-Level Synthesis Compiler
DOE Office of Scientific and Technical Information (OSTI.GOV)
Jin, Zheming; Finkel, Hal; Yoshii, Kazutomo
Compared to central processing units (CPUs) and graphics processing units (GPUs), field programmable gate arrays (FPGAs) have major advantages in reconfigurability and performance achieved per watt. This development flow has been augmented with high-level synthesis (HLS) flow that can convert programs written in a high-level programming language to Hardware Description Language (HDL). Using high-level programming languages such as C, C++, and OpenCL for FPGA-based development could allow software developers, who have little FPGA knowledge, to take advantage of the FPGA-based application acceleration. This improves developer productivity and makes the FPGA-based acceleration accessible to hardware and software developers. Xilinx Vivado HLSmore » compiler is a high-level synthesis tool that enables C, C++ and System C specification to be directly targeted into Xilinx FPGAs without the need to create RTL manually. The white paper [1] published recently by Xilinx uses a finite impulse response (FIR) example to demonstrate the variable-precision features in the Vivado HLS compiler and the resource and power benefits of converting floating point to fixed point for a design. To get a better understanding of variable-precision features in terms of resource usage and performance, this report presents the experimental results of evaluating the FIR example using Vivado HLS 2017.1 and a Kintex Ultrascale FPGA. In addition, we evaluated the half-precision floating-point data type against the double-precision and single-precision data type and present the detailed results.« less
Field-Programmable Gate Array-based fluxgate magnetometer with digital integration
NASA Astrophysics Data System (ADS)
Butta, Mattia; Janosek, Michal; Ripka, Pavel
2010-05-01
In this paper, a digital magnetometer based on printed circuit board fluxgate is presented. The fluxgate is pulse excited and the signal is extracted by gate integration. We investigate the possibility to perform integration on very narrow gates (typically 500 ns) by using digital techniques. The magnetometer is based on field-programmable gate array (FPGA) card: we will show all the advantages and disadvantages, given by digitalization of fluxgate output voltage by means of analog-to-digital converter on FPGA card, as well as digitalization performed by external digitizer. Due to very narrow gate, it is shown that a magnetometer entirely based on a FPGA card is preferable, because it avoids noise due to trigger instability. Both open loop and feedback operative mode are described and achieved results are presented.
Wang, Jinhui; He, Hua; Xu, Xin; Wang, Xiao; Chen, Yongbing; Yin, Lichen
2018-07-01
Effective anti-cancer therapy is hurdled by the complicated extracellular and intracellular barriers, and thus a smart gene vector that can enable programmable gene delivery is highly demanded. Photo-manipulation of gene delivery processes features spatial and temporal precision, while majority of current strategies utilizes short-wavelength UV/visible light with poor tissue penetration or high-power-density near-infrared (NIR) light that would cause undesired heat damage. Herein, an ROS-degradable polycation was designed and co-delivered with a photosensitizer (PS), thus realizing photo-programmable gene delivery using far-red light (661 nm) at low optical power density (down to 5 mW cm -2 ). Thioketal-crosslinked polyethylenimine (TK-PEI) was synthesized to condense p53 gene to form nanocomplexes (NCs), and hyaluronic acid (HA) modified with pheophytin a (Pha) was coated onto NCs to enhance their colloidal stability and enable cancer cell targeting. Short-time (8-min) light irradiation produced non-lethal amount of ROS to disrupt the endosomal membranes and facilitate p53 gene release via degradation of TK-PEI, which collectively enhanced p53 expression levels toward anti-cancer gene therapy. Long-time (30-min) light irradiation at the post-transfection state generated lethal amount of ROS, which cooperatively killed cancer cells to strengthen p53 gene therapy. To the best of our knowledge, this study represents the first example of an "one stone, three birds" approach to realize cooperative anti-cancer gene therapy using low-power-density, long-wavelength visible light as a single stimulus. Copyright © 2018 Elsevier Ltd. All rights reserved.
Lin, Xiaodong; Liu, Yaqing; Deng, Jiankang; Lyu, Yanlong; Qian, Pengcheng; Li, Yunfei; Wang, Shuo
2018-02-21
The integration of multiple DNA logic gates on a universal platform to implement advance logic functions is a critical challenge for DNA computing. Herein, a straightforward and powerful strategy in which a guanine-rich DNA sequence lighting up a silver nanocluster and fluorophore was developed to construct a library of logic gates on a simple DNA-templated silver nanoclusters (DNA-AgNCs) platform. This library included basic logic gates, YES, AND, OR, INHIBIT, and XOR, which were further integrated into complex logic circuits to implement diverse advanced arithmetic/non-arithmetic functions including half-adder, half-subtractor, multiplexer, and demultiplexer. Under UV irradiation, all the logic functions could be instantly visualized, confirming an excellent repeatability. The logic operations were entirely based on DNA hybridization in an enzyme-free and label-free condition, avoiding waste accumulation and reducing cost consumption. Interestingly, a DNA-AgNCs-based multiplexer was, for the first time, used as an intelligent biosensor to identify pathogenic genes, E. coli and S. aureus genes, with a high sensitivity. The investigation provides a prototype for the wireless integration of multiple devices on even the simplest single-strand DNA platform to perform diverse complex functions in a straightforward and cost-effective way.
Systems and methods for detecting a failure event in a field programmable gate array
NASA Technical Reports Server (NTRS)
Ng, Tak-Kwong (Inventor); Herath, Jeffrey A. (Inventor)
2009-01-01
An embodiment generally relates to a method of self-detecting an error in a field programmable gate array (FPGA). The method includes writing a signature value into a signature memory in the FPGA and determining a conclusion of a configuration refresh operation in the FPGA. The method also includes reading an outcome value from the signature memory.
Programmable Schottky Junctions Based on Ferroelectric Gated MoS2 Transistors
NASA Astrophysics Data System (ADS)
Xiao, Zhiyong; Song, Jingfeng; Drcharme, Stephen; Hong, Xia
We report a programmable Schottky junction based on MoS2 field effect transistors with a SiO2 back gate and a ferroelectric copolymer poly(vinylidene-fluoride-trifluorethylene) (PVDF) top gate. We fabricated mechanically exfoliated single layer MoS2 flakes into two point devices via e-beam lithography, and deposited on the top of the devices ~20 nm PVDF thin films. The polarization of the PVDF layer is controlled locally by conducting atomic force microscopy. The devices exhibit linear ID-VD characteristics when the ferroelectric gate is uniformly polarized in one direction. We then polarized the gate into two domains with opposite polarization directions, and observed that the ID-VD characteristics of the MoS2 channel can be modulated between linear and rectified behaviors depending on the back gate voltage. The nonlinear ID-VD relation emerges when half of the channel is in the semiconductor phase while the other half is in the metallic phase, and it can be well described by the thermionic emission model with a Schottky barrier of ~0.5 eV. The Schottky junction can be erased by re-write the entire channel in the uniform polarization state. Our study facilitates the development of programmable, multifunctional nanoelectronics based on layered 2D TMDs..
Zhang, Lixin; Zheng, Xianlin; Deng, Wei; Lu, Yiqing; Lechevallier, Severine; Ye, Zhiqiang; Goldys, Ewa M; Dawes, Judith M; Piper, James A; Yuan, Jingli; Verelst, Marc; Jin, Dayong
2014-10-13
Time-gated luminescence microscopy using long-lifetime molecular probes can effectively eliminate autofluorescence to enable high contrast imaging. Here we investigate a new strategy of time-gated imaging for simultaneous visualisation of multiple species of microorganisms stained with long-lived complexes under low-background conditions. This is realized by imaging two pathogenic organisms (Giardia lamblia stained with a red europium probe and Cryptosporidium parvum with a green terbium probe) at UV wavelengths (320-400 nm) through synchronization of a flash lamp with high repetition rate (1 kHz) to a robust time-gating detection unit. This approach provides four times enhancement in signal-to-background ratio over non-time-gated imaging, while the average signal intensity also increases six-fold compared with that under UV LED excitation. The high sensitivity is further confirmed by imaging the single europium-doped Y₂O₂S nanocrystals (150 nm). We report technical details regarding the time-gating detection unit and demonstrate its compatibility with commercial epi-fluorescence microscopes, providing a valuable and convenient addition to standard laboratory equipment.
NASA Astrophysics Data System (ADS)
Zhang, Lixin; Zheng, Xianlin; Deng, Wei; Lu, Yiqing; Lechevallier, Severine; Ye, Zhiqiang; Goldys, Ewa M.; Dawes, Judith M.; Piper, James A.; Yuan, Jingli; Verelst, Marc; Jin, Dayong
2014-10-01
Time-gated luminescence microscopy using long-lifetime molecular probes can effectively eliminate autofluorescence to enable high contrast imaging. Here we investigate a new strategy of time-gated imaging for simultaneous visualisation of multiple species of microorganisms stained with long-lived complexes under low-background conditions. This is realized by imaging two pathogenic organisms (Giardia lamblia stained with a red europium probe and Cryptosporidium parvum with a green terbium probe) at UV wavelengths (320-400 nm) through synchronization of a flash lamp with high repetition rate (1 kHz) to a robust time-gating detection unit. This approach provides four times enhancement in signal-to-background ratio over non-time-gated imaging, while the average signal intensity also increases six-fold compared with that under UV LED excitation. The high sensitivity is further confirmed by imaging the single europium-doped Y2O2S nanocrystals (150 nm). We report technical details regarding the time-gating detection unit and demonstrate its compatibility with commercial epi-fluorescence microscopes, providing a valuable and convenient addition to standard laboratory equipment.
On the use of programmable hardware and reduced numerical precision in earth-system modeling.
Düben, Peter D; Russell, Francis P; Niu, Xinyu; Luk, Wayne; Palmer, T N
2015-09-01
Programmable hardware, in particular Field Programmable Gate Arrays (FPGAs), promises a significant increase in computational performance for simulations in geophysical fluid dynamics compared with CPUs of similar power consumption. FPGAs allow adjusting the representation of floating-point numbers to specific application needs. We analyze the performance-precision trade-off on FPGA hardware for the two-scale Lorenz '95 model. We scale the size of this toy model to that of a high-performance computing application in order to make meaningful performance tests. We identify the minimal level of precision at which changes in model results are not significant compared with a maximal precision version of the model and find that this level is very similar for cases where the model is integrated for very short or long intervals. It is therefore a useful approach to investigate model errors due to rounding errors for very short simulations (e.g., 50 time steps) to obtain a range for the level of precision that can be used in expensive long-term simulations. We also show that an approach to reduce precision with increasing forecast time, when model errors are already accumulated, is very promising. We show that a speed-up of 1.9 times is possible in comparison to FPGA simulations in single precision if precision is reduced with no strong change in model error. The single-precision FPGA setup shows a speed-up of 2.8 times in comparison to our model implementation on two 6-core CPUs for large model setups.
Microdose Induced Data Loss on Floating Gate Memories
NASA Technical Reports Server (NTRS)
Guertin, Steven M.; Nguyen, Duc M.; Patterson, Jeffrey D.
2006-01-01
Heavy ion irradiation of flash memories shows loss of stored data. The fluence dependence is indicative of microdose effects. Other qualitative factors identifying the effect as microdose are discussed. The data is presented, and compared to statistical results of a microdose target-based model.
NASA Astrophysics Data System (ADS)
Lee, Dong-Hoon; Kim, Jung-Min; Lim, Ki-Tae; Cho, Hyeong Jun; Bang, Jin Ho; Kim, Yong-Sang
2016-03-01
In this paper, we empirically investigate the retention performance of organic non-volatile floating gate memory devices with CdSe nanoparticles (NPs) as charge trapping elements. Core-structured CdSe NPs or core-shell-structured ZnS/CdSe NPs were mixed in PMMA and their performance in pentacene based device was compared. The NPs and self-organized thin tunneling PMMA inside the devices exhibited hysteresis by trapping hole during capacitance-voltage characterization. Despite of core-structured NPs showing a larger memory window, the retention time was too short to be adopted by an industry. By contrast core-shell structured NPs showed an improved retention time of >10000 seconds than core-structure NCs. Based on these results and the energy band structure, we propose the retention mechanism of each NPs. This investigation of retention performance provides a comparative and systematic study of the charging/discharging behaviors of NPs based memory devices. [Figure not available: see fulltext.
Effects of Heavy Ion Exposure on Nanocrystal Nonvolatile Memory
NASA Technical Reports Server (NTRS)
Oldham, Timothy R.; Suhail, Mohammed; Kuhn, Peter; Prinz, Erwin; Kim, Hak; LaBel, Kenneth A.
2004-01-01
We have irradiated engineering samples of Freescale 4M nonvolatile memories with heavy ions. They use Silicon nanocrystals as the storage element, rather than the more common floating gate. The irradiations were performed using the Texas A&M University cyclotron Single Event Effects Test Facility. The chips were tested in the static mode, and in the dynamic read mode, dynamic write (program) mode, and dynamic erase mode. All the errors observed appeared to be due to single, isolated bits, even in the program and erase modes. These errors appeared to be related to the micro-dose mechanism. All the errors corresponded to the loss of electrons from a programmed cell. The underlying physical mechanisms will be discussed in more detail later. There were no errors, which could be attributed to malfunctions of the control circuits. At the highest LET used in the test (85 MeV/mg/sq cm), however, there appeared to be a failure due to gate rupture. Failure analysis is being conducted to confirm this conclusion. There was no unambiguous evidence of latchup under any test conditions. Generally, the results on the nanocrystal technology compare favorably with results on currently available commercial floating gate technology, indicating that the technology is promising for future space applications, both civilian and military.
NASA Technical Reports Server (NTRS)
Berg, Melanie D.; LaBel, Kenneth; Kim, Hak
2014-01-01
An informative session regarding SRAM FPGA basics. Presenting a framework for fault injection techniques applied to Xilinx Field Programmable Gate Arrays (FPGAs). Introduce an overlooked time component that illustrates fault injection is impractical for most real designs as a stand-alone characterization tool. Demonstrate procedures that benefit from fault injection error analysis.
NASA Astrophysics Data System (ADS)
Gribble, Adam; Alali, Sanaz; Vitkin, Alex
2016-03-01
Polarized light has many applications in biomedical imaging. The interaction of a biological sample with polarized light reveals information about its composition, both structural and functional. For example, the polarimetry-derived metric of linear retardance (birefringence) is dependent on tissue structural organization (anisotropy) and can be used to diagnose myocardial infarct; circular birefringence (optical rotation) can measure glucose concentrations. The most comprehensive type of polarimetry analysis is to measure the Mueller matrix, a polarization transfer function that completely describes how a sample interacts with polarized light. To derive this 4x4 matrix it is necessary to observe how a tissue interacts with different polarizations. A well-suited approach for tissue polarimetry is to use photoelastic modulators (PEMs), which dynamically modulate the polarization of light. Previously, we have demonstrated a rapid time-gated Stokes imaging system that is capable of characterizing the state of polarized light (the Stokes vector) over a large field, after interacting with any turbid media. This was accomplished by synchronizing CCD camera acquisition times relative to two PEMs using a field-programmable gate array (FPGA). Here, we extend this technology to four PEMs, yielding a polarimetry system that is capable of rapidly measuring the complete sample Mueller matrix over a large field of view, with no moving parts and no beam steering. We describe the calibration procedure and evaluate the accuracy of the measurements. Results are shown for tissue-mimicking phantoms, as well as initial biological samples.
Ritter, Eglof; Stehfest, Katja; Berndt, Andre; Hegemann, Peter; Bartl, Franz J
2008-12-12
Channelrhodopsin-2 (ChR2) is a microbial type rhodopsin and a light-gated cation channel that controls phototaxis in Chlamydomonas. We expressed ChR2 in COS-cells, purified it, and subsequently investigated this unusual photoreceptor by flash photolysis and UV-visible and Fourier transform infrared difference spectroscopy. Several transient photoproducts of the wild type ChR2 were identified, and their kinetics and molecular properties were compared with those of the ChR2 mutant E90Q. Based on the spectroscopic data we developed a model of the photocycle comprising six distinguishable intermediates. This photocycle shows similarities to the photocycle of the ChR2-related Channelrhodopsin of Volvox but also displays significant differences. We show that molecular changes include retinal isomerization, changes in hydrogen bonding of carboxylic acids, and large alterations of the protein backbone structure. These alterations are stronger than those observed in the photocycle of other microbial rhodopsins like bacteriorhodopsin and are related to those occurring in animal rhodopsins. UV-visible and Fourier transform infrared difference spectroscopy revealed two late intermediates with different time constants of tau = 6 and 40 s that exist during the recovery of the dark state. The carboxylic side chain of Glu(90) is involved in the slow transition. The molecular changes during the ChR2 photocycle are discussed with respect to other members of the rhodopsin family.
Ritter, Eglof; Stehfest, Katja; Berndt, Andre; Hegemann, Peter; Bartl, Franz J.
2008-01-01
Channelrhodopsin-2 (ChR2) is a microbial type rhodopsin and a light-gated cation channel that controls phototaxis in Chlamydomonas. We expressed ChR2 in COS-cells, purified it, and subsequently investigated this unusual photoreceptor by flash photolysis and UV-visible and Fourier transform infrared difference spectroscopy. Several transient photoproducts of the wild type ChR2 were identified, and their kinetics and molecular properties were compared with those of the ChR2 mutant E90Q. Based on the spectroscopic data we developed a model of the photocycle comprising six distinguishable intermediates. This photocycle shows similarities to the photocycle of the ChR2-related Channelrhodopsin of Volvox but also displays significant differences. We show that molecular changes include retinal isomerization, changes in hydrogen bonding of carboxylic acids, and large alterations of the protein backbone structure. These alterations are stronger than those observed in the photocycle of other microbial rhodopsins like bacteriorhodopsin and are related to those occurring in animal rhodopsins. UV-visible and Fourier transform infrared difference spectroscopy revealed two late intermediates with different time constants of τ = 6 and 40 s that exist during the recovery of the dark state. The carboxylic side chain of Glu90 is involved in the slow transition. The molecular changes during the ChR2 photocycle are discussed with respect to other members of the rhodopsin family. PMID:18927082
Photon-triggered nanowire transistors
NASA Astrophysics Data System (ADS)
Kim, Jungkil; Lee, Hoo-Cheol; Kim, Kyoung-Ho; Hwang, Min-Soo; Park, Jin-Sung; Lee, Jung Min; So, Jae-Pil; Choi, Jae-Hyuck; Kwon, Soon-Hong; Barrelet, Carl J.; Park, Hong-Gyu
2017-10-01
Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 106. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.
Photon-triggered nanowire transistors.
Kim, Jungkil; Lee, Hoo-Cheol; Kim, Kyoung-Ho; Hwang, Min-Soo; Park, Jin-Sung; Lee, Jung Min; So, Jae-Pil; Choi, Jae-Hyuck; Kwon, Soon-Hong; Barrelet, Carl J; Park, Hong-Gyu
2017-10-01
Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10 6 . A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.
Allosteric nature of P2X receptor activation probed by photoaffinity labelling
Bhargava, Y; Rettinger, J; Mourot, A
2012-01-01
BACKGROUND AND PURPOSE In P2X receptors, agonist binding at the interface between neighbouring subunits is efficiently transduced to ion channel gating. However, the relationship between binding and gating is difficult to study because agonists continuously bind and unbind. Here, we covalently incorporated agonists in the binding pocket of P2X receptors and examined how binding site occupancy affects the ability of the channel to gate. EXPERIMENTAL APPROACH We used a strategy for tethering agonists to their ATP-binding pocket, while simultaneously probing ion channel gating using electrophysiology. The agonist 2′,3′-O-(4-benzoylbenzoyl)-ATP (BzATP), a photoaffinity analogue of ATP, enabled us to trap rat homomeric P2X2 receptor and a P2X2/1 receptor chimera in different agonist-bound states. UV light was used to control the degree of covalent occupancy of the receptors. KEY RESULTS Irradiation of the P2X2/1 receptor chimera – BzATP complex resulted in a persistent current that lasted even after extensive washout, consistent with photochemical tethering of the agonist BzATP and trapping of the receptors in an open state. Partial labelling with BzATP primed subsequent agonist binding and modulated gating efficiency for both full and partial agonists. CONCLUSIONS AND IMPLICATIONS Our photolabelling strategy provides new molecular insights into the activation mechanism of the P2X receptor. We show here that priming with full agonist molecules leads to an increase in gating efficiency after subsequent agonist binding. PMID:22725669
33 CFR 144.01-10 - Equipment for life floats.
Code of Federal Regulations, 2010 CFR
2010-07-01
... 33 Navigation and Navigable Waters 2 2010-07-01 2010-07-01 false Equipment for life floats. 144.01... for life floats. (a) Each lifefloat shall be provided with a painter. This painter shall be a manila... 1/2 inch in diameter. (b) Each life float must have a water light of an approved automatic electric...
33 CFR 144.01-10 - Equipment for life floats.
Code of Federal Regulations, 2011 CFR
2011-07-01
... 33 Navigation and Navigable Waters 2 2011-07-01 2011-07-01 false Equipment for life floats. 144.01... for life floats. (a) Each lifefloat shall be provided with a painter. This painter shall be a manila... 1/2 inch in diameter. (b) Each life float must have a water light of an approved automatic electric...
33 CFR 144.01-10 - Equipment for life floats.
Code of Federal Regulations, 2014 CFR
2014-07-01
... 33 Navigation and Navigable Waters 2 2014-07-01 2014-07-01 false Equipment for life floats. 144.01... for life floats. (a) Each lifefloat shall be provided with a painter. This painter shall be a manila... 1/2 inch in diameter. (b) Each life float must have a water light of an approved automatic electric...
33 CFR 144.01-10 - Equipment for life floats.
Code of Federal Regulations, 2013 CFR
2013-07-01
... 33 Navigation and Navigable Waters 2 2013-07-01 2013-07-01 false Equipment for life floats. 144.01... for life floats. (a) Each lifefloat shall be provided with a painter. This painter shall be a manila... 1/2 inch in diameter. (b) Each life float must have a water light of an approved automatic electric...
33 CFR 144.01-10 - Equipment for life floats.
Code of Federal Regulations, 2012 CFR
2012-07-01
... 33 Navigation and Navigable Waters 2 2012-07-01 2012-07-01 false Equipment for life floats. 144.01... for life floats. (a) Each lifefloat shall be provided with a painter. This painter shall be a manila... 1/2 inch in diameter. (b) Each life float must have a water light of an approved automatic electric...
Compact universal logic gates realized using quantization of current in nanodevices.
Zhang, Wancheng; Wu, Nan-Jian; Yang, Fuhua
2007-12-12
This paper proposes novel universal logic gates using the current quantization characteristics of nanodevices. In nanodevices like the electron waveguide (EW) and single-electron (SE) turnstile, the channel current is a staircase quantized function of its control voltage. We use this unique characteristic to compactly realize Boolean functions. First we present the concept of the periodic-threshold threshold logic gate (PTTG), and we build a compact PTTG using EW and SE turnstiles. We show that an arbitrary three-input Boolean function can be realized with a single PTTG, and an arbitrary four-input Boolean function can be realized by using two PTTGs. We then use one PTTG to build a universal programmable two-input logic gate which can be used to realize all two-input Boolean functions. We also build a programmable three-input logic gate by using one PTTG. Compared with linear threshold logic gates, with the PTTG one can build digital circuits more compactly. The proposed PTTGs are promising for future smart nanoscale digital system use.
Comparison of self-cleaning properties of three titania coatings on float glass
NASA Astrophysics Data System (ADS)
Piispanen, Minna; Hupa, Leena
2011-11-01
This work compares the self-cleaning properties of experimental TiO2 and TiO2-Ag coatings on float glass with a commercial self-cleaning glass. In the experimental surfaces, TiO2 coating was applied to float glass via the sol-gel route, while TiO2-Ag coating was applied by the liquid flame spray method, which deposits TiO2-Ag composite nanoparticles on the surface. The effect of the coatings on the surface wettability and the activation time for achieving hydrophilicity was studied through water contact angle as a function of exposure time to UV light. The surface morphology was investigated by using scanning electron microscopy (SEM) and confocal optical microscopy. The photocatalytic activity of the coatings was examined with methylene blue and stearic acid degradation tests. Finally, the soil attachment to the surfaces was tested with a sebum-based model soil. The sol-gel TiO2 coating became superhydrophilic within a few hours, while the activation time needed for the commercial titania coated glass was several days. The surface with the TiO2-Ag nanoparticles did not show any marked changes in the water contact angle. The commercial titania coated and the sol-gel TiO2 surfaces showed self-cleaning properties and clearly lower attachment of soil than the uncoated and TiO2-Ag coated surfaces. The difference in the interaction of the surfaces with the organic contaminants was assumed to depend mainly on differences in the thickness of the coatings.
NASA Astrophysics Data System (ADS)
Hayes-Thakore, Chris; Spark, Stephen; Pool, Peter; Walker, Andrew; Clapp, Matthew; Waltham, Nick; Shugarov, Andrey
2015-10-01
As part of a strategy to provide increasingly complex systems to customers, e2v is currently developing the sensor solution for focal plane array for the WSO-UV (World Space Observatory - Ultraviolet) programme, a Russian led 170 cm space astronomical telescope. This is a fully integrated sensor system for the detection of UV light across 3 channels: 2 high resolution spectrometers covering wavelengths of 115 - 176 nm and 174 - 310 nm and a Long-Slit Spectrometer covering 115 nm - 310 nm. This paper will describe the systematic approach and technical solution that has been developed based on e2v's long heritage, CCD experience and expertise. It will show how this approach is consistent with the key performance requirements and the overall environment requirements that the delivered system will experience through ground test, integration, storage and flight.
Lin, Xiaodong; Deng, Jiankang; Lyu, Yanlong; Qian, Pengcheng; Li, Yunfei
2018-01-01
The integration of multiple DNA logic gates on a universal platform to implement advance logic functions is a critical challenge for DNA computing. Herein, a straightforward and powerful strategy in which a guanine-rich DNA sequence lighting up a silver nanocluster and fluorophore was developed to construct a library of logic gates on a simple DNA-templated silver nanoclusters (DNA-AgNCs) platform. This library included basic logic gates, YES, AND, OR, INHIBIT, and XOR, which were further integrated into complex logic circuits to implement diverse advanced arithmetic/non-arithmetic functions including half-adder, half-subtractor, multiplexer, and demultiplexer. Under UV irradiation, all the logic functions could be instantly visualized, confirming an excellent repeatability. The logic operations were entirely based on DNA hybridization in an enzyme-free and label-free condition, avoiding waste accumulation and reducing cost consumption. Interestingly, a DNA-AgNCs-based multiplexer was, for the first time, used as an intelligent biosensor to identify pathogenic genes, E. coli and S. aureus genes, with a high sensitivity. The investigation provides a prototype for the wireless integration of multiple devices on even the simplest single-strand DNA platform to perform diverse complex functions in a straightforward and cost-effective way. PMID:29675221
Roll Angle Estimation Using Thermopiles for a Flight Controlled Mortar
2012-06-01
Using Xilinx’s System generator, the entire design was implemented at a relatively high level within Malab’s Simulink. This allowed VHDL code to...thermopile data with a Recursive Least Squares (RLS) filter implemented on a field programmable gate array (FPGA). These results demonstrate the...accurately estimated by processing the thermopile data with a Recursive Least Squares (RLS) filter implemented on a field programmable gate array (FPGA
Design of barrier bucket kicker control system
NASA Astrophysics Data System (ADS)
Ni, Fa-Fu; Wang, Yan-Yu; Yin, Jun; Zhou, De-Tai; Shen, Guo-Dong; Zheng, Yang-De.; Zhang, Jian-Chuan; Yin, Jia; Bai, Xiao; Ma, Xiao-Li
2018-05-01
The Heavy-Ion Research Facility in Lanzhou (HIRFL) contains two synchrotrons: the main cooler storage ring (CSRm) and the experimental cooler storage ring (CSRe). Beams are extracted from CSRm, and injected into CSRe. To apply the Barrier Bucket (BB) method on the CSRe beam accumulation, a new BB technology based kicker control system was designed and implemented. The controller of the system is implemented using an Advanced Reduced Instruction Set Computer (RISC) Machine (ARM) chip and a field-programmable gate array (FPGA) chip. Within the architecture, ARM is responsible for data presetting and floating number arithmetic processing. The FPGA computes the RF phase point of the two rings and offers more accurate control of the time delay. An online preliminary experiment on HIRFL was also designed to verify the functionalities of the control system. The result shows that the reference trigger point of two different sinusoidal RF signals for an arbitrary phase point was acquired with a matched phase error below 1° (approximately 2.1 ns), and the step delay time better than 2 ns were realized.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Underwood, Keith D; Ulmer, Craig D.; Thompson, David
Field programmable gate arrays (FPGAs) have been used as alternative computational de-vices for over a decade; however, they have not been used for traditional scientific com-puting due to their perceived lack of floating-point performance. In recent years, there hasbeen a surge of interest in alternatives to traditional microprocessors for high performancecomputing. Sandia National Labs began two projects to determine whether FPGAs wouldbe a suitable alternative to microprocessors for high performance scientific computing and,if so, how they should be integrated into the system. We present results that indicate thatFPGAs could have a significant impact on future systems. FPGAs have thepotentialtohave ordermore » of magnitude levels of performance wins on several key algorithms; however,there are serious questions as to whether the system integration challenge can be met. Fur-thermore, there remain challenges in FPGA programming and system level reliability whenusing FPGA devices.4 AcknowledgmentArun Rodrigues provided valuable support and assistance in the use of the Structural Sim-ulation Toolkit within an FPGA context. Curtis Janssen and Steve Plimpton provided valu-able insights into the workings of two Sandia applications (MPQC and LAMMPS, respec-tively).5« less
Rath, N; Kato, S; Levesque, J P; Mauel, M E; Navratil, G A; Peng, Q
2014-04-01
Fast, digital signal processing (DSP) has many applications. Typical hardware options for performing DSP are field-programmable gate arrays (FPGAs), application-specific integrated DSP chips, or general purpose personal computer systems. This paper presents a novel DSP platform that has been developed for feedback control on the HBT-EP tokamak device. The system runs all signal processing exclusively on a Graphics Processing Unit (GPU) to achieve real-time performance with latencies below 8 μs. Signals are transferred into and out of the GPU using PCI Express peer-to-peer direct-memory-access transfers without involvement of the central processing unit or host memory. Tests were performed on the feedback control system of the HBT-EP tokamak using forty 16-bit floating point inputs and outputs each and a sampling rate of up to 250 kHz. Signals were digitized by a D-TACQ ACQ196 module, processing done on an NVIDIA GTX 580 GPU programmed in CUDA, and analog output was generated by D-TACQ AO32CPCI modules.
Active vibration control of a full scale aircraft wing using a reconfigurable controller
NASA Astrophysics Data System (ADS)
Prakash, Shashikala; Renjith Kumar, T. G.; Raja, S.; Dwarakanathan, D.; Subramani, H.; Karthikeyan, C.
2016-01-01
This work highlights the design of a Reconfigurable Active Vibration Control (AVC) System for aircraft structures using adaptive techniques. The AVC system with a multichannel capability is realized using Filtered-X Least Mean Square algorithm (FxLMS) on Xilinx Virtex-4 Field Programmable Gate Array (FPGA) platform in Very High Speed Integrated Circuits Hardware Description Language, (VHDL). The HDL design is made based on Finite State Machine (FSM) model with Floating point Intellectual Property (IP) cores for arithmetic operations. The use of FPGA facilitates to modify the system parameters even during runtime depending on the changes in user's requirements. The locations of the control actuators are optimized based on dynamic modal strain approach using genetic algorithm (GA). The developed system has been successfully deployed for the AVC testing of the full-scale wing of an all composite two seater transport aircraft. Several closed loop configurations like single channel and multi-channel control have been tested. The experimental results from the studies presented here are very encouraging. They demonstrate the usefulness of the system's reconfigurability for real time applications.
Application of low-noise CID imagers in scientific instrumentation cameras
NASA Astrophysics Data System (ADS)
Carbone, Joseph; Hutton, J.; Arnold, Frank S.; Zarnowski, Jeffrey J.; Vangorden, Steven; Pilon, Michael J.; Wadsworth, Mark V.
1991-07-01
CIDTEC has developed a PC-based instrumentation camera incorporating a preamplifier per row CID imager and a microprocessor/LCA camera controller. The camera takes advantage of CID X-Y addressability to randomly read individual pixels and potentially overlapping pixel subsets in true nondestructive (NDRO) as well as destructive readout modes. Using an oxy- nitride fabricated CID and the NDRO readout technique, pixel full well and noise levels of approximately 1*10(superscript 6) and 40 electrons, respectively, were measured. Data taken from test structures indicates noise levels (which appear to be 1/f limited) can be reduced by a factor of two by eliminating the nitride under the preamplifier gate. Due to software programmability, versatile readout capabilities, wide dynamic range, and extended UV/IR capability, this camera appears to be ideally suited for use in spectroscopy and other scientific applications.
152. Photographic copy of original construction drawing dated October 24, ...
152. Photographic copy of original construction drawing dated October 24, 1930 (from Record Group 115, Denver Branch of the National Archives, Denver). 60 x 12 RING GATE CONTROL; FLOAT WELL ASSEMBLY AND COVER HOIST STEM-CONNECTION ROD-SLEEVE. - Owyhee Dam, Across Owyhee River, Nyssa, Malheur County, OR
Nonvolatile Memories Using Quantum Dot (QD) Floating Gates Assembled on II-VI Tunnel Insulators
NASA Astrophysics Data System (ADS)
Suarez, E.; Gogna, M.; Al-Amoody, F.; Karmakar, S.; Ayers, J.; Heller, E.; Jain, F.
2010-07-01
This paper presents preliminary data on quantum dot gate nonvolatile memories using nearly lattice-matched ZnS/Zn0.95Mg0.05S/ZnS tunnel insulators. The GeO x -cladded Ge and SiO x -cladded Si quantum dots (QDs) are self-assembled site-specifically on the II-VI insulator grown epitaxially over the Si channel (formed between the source and drain region). The pseudomorphic II-VI stack serves both as a tunnel insulator and a high- κ dielectric. The effect of Mg incorporation in ZnMgS is also investigated. For the control gate insulator, we have used Si3N4 and SiO2 layers grown by plasma- enhanced chemical vapor deposition.
A MODFET dc model with improved pinchoff and saturation characteristics
NASA Astrophysics Data System (ADS)
Rohdin, Hans; Roblin, Patrick
1986-05-01
An improved analytical dc model for the MODFET is proposed which uses a new approximation of the two-dimensional electron gas concentration versus gate-to-channel voltage, a ratio which models both the subthreshold region and the gradual saturation of carriers due to the onset of AlGaAs charge modulation. A two-region Grebene-Ghandi model with a floating boundary is used for the channel. A maximum transconductance and a finite intrinsic output conductance in the saturated region are predicted, in agreement with experimental observations. The model is shown to approach the saturated velocity model in the limit of very short gate lengths, and to approach the classical gradual channel model in the limit of very long gate lengths.
Efficient Multiplexer FPGA Block Structures Based on G4FETs
NASA Technical Reports Server (NTRS)
Vatan, Farrokh; Fijany, Amir
2009-01-01
Generic structures have been conceived for multiplexer blocks to be implemented in field-programmable gate arrays (FPGAs) based on four-gate field-effect transistors (G(sup 4)FETs). This concept is a contribution to the continuing development of digital logic circuits based on G4FETs and serves as a further demonstration that logic circuits based on G(sup 4)FETs could be more efficient (in the sense that they could contain fewer transistors), relative to functionally equivalent logic circuits based on conventional transistors. Results in this line of development at earlier stages were summarized in two previous NASA Tech Briefs articles: "G(sup 4)FETs as Universal and Programmable Logic Gates" (NPO-41698), Vol. 31, No. 7 (July 2007), page 44, and "Efficient G4FET-Based Logic Circuits" (NPO-44407), Vol. 32, No. 1 ( January 2008), page 38 . As described in the first-mentioned previous article, a G4FET can be made to function as a three-input NOT-majority gate, which has been shown to be a universal and programmable logic gate. The universality and programmability could be exploited to design logic circuits containing fewer components than are required for conventional transistor-based circuits performing the same logic functions. The second-mentioned previous article reported results of a comparative study of NOT-majority-gate (G(sup 4)FET)-based logic-circuit designs and equivalent NOR- and NAND-gate-based designs utilizing conventional transistors. [NOT gates (inverters) were also included, as needed, in both the G(sup 4)FET- and the NOR- and NAND-based designs.] In most of the cases studied, fewer logic gates (and, hence, fewer transistors), were required in the G(sup 4)FET-based designs. There are two popular categories of FPGA block structures or architectures: one based on multiplexers, the other based on lookup tables. In standard multiplexer- based architectures, the basic building block is a tree-like configuration of multiplexers, with possibly a few additional logic gates such as ANDs or ORs. Interconnections are realized by means of programmable switches that may connect the input terminals of a block to output terminals of other blocks, may bridge together some of the inputs, or may connect some of the input terminals to signal sources representing constant logical levels 0 or 1. The left part of the figure depicts a four-to-one G(sup 4)FET-based multiplexer tree; the right part of the figure depicts a functionally equivalent four-to-one multiplexer based on conventional transistors. The G(sup 4)FET version would contains 54 transistors; the conventional version contains 70 transistors.
Software Techniques for Non-Von Neumann Architectures
1990-01-01
Commtopo programmable Benes net.; hypercubic lattice for QCD Control CENTRALIZED Assign STATIC Memory :SHARED Synch UNIVERSAL Max-cpu 566 Proessor...boards (each = 4 floating point units, 2 multipliers) Cpu-size 32-bit floating point chips Perform 11.4 Gflops Market quantum chromodynamics ( QCD ...functions there should exist a capability to define hierarchies and lattices of complex objects. A complex object can be made up of a set of simple objects
NEPP Update of Independent Single Event Upset Field Programmable Gate Array Testing
NASA Technical Reports Server (NTRS)
Berg, Melanie; Label, Kenneth; Campola, Michael; Pellish, Jonathan
2017-01-01
This presentation provides a NASA Electronic Parts and Packaging (NEPP) Program update of independent Single Event Upset (SEU) Field Programmable Gate Array (FPGA) testing including FPGA test guidelines, Microsemi RTG4 heavy-ion results, Xilinx Kintex-UltraScale heavy-ion results, Xilinx UltraScale+ single event effect (SEE) test plans, development of a new methodology for characterizing SEU system response, and NEPP involvement with FPGA security and trust.
Initial Single Event Effects Testing of the Xilinx Virtex-4 Field Programmable Gate Array
NASA Technical Reports Server (NTRS)
Allen, Gregory R.; Swift, Gary M.; Carmichael, C.; Tseng, C.
2007-01-01
We present initial results for the thin epitaxial Xilinx Virtex-4 Fie ld Programmable Gate Array (FPGA), and compare to previous results ob tained for the Virtex-II and Virtex-II Pro. The data presented was a cquired through a consortium based effort with the common goal of pr oviding the space community with data and mitigation methods for the use of Xilinx FPGAs in space.
NASA Astrophysics Data System (ADS)
Suarez, Ernesto; Chan, Pik-Yiu; Lingalugari, Murali; Ayers, John E.; Heller, Evan; Jain, Faquir
2013-11-01
This paper describes the use of II-VI lattice-matched gate insulators in quantum dot gate three-state and flash nonvolatile memory structures. Using silicon-on-insulator wafers we have fabricated GeO x -cladded Ge quantum dot (QD) floating gate nonvolatile memory field-effect transistor devices using ZnS-Zn0.95Mg0.05S-ZnS tunneling layers. The II-VI heteroepitaxial stack is nearly lattice-matched and is grown using metalorganic chemical vapor deposition on a silicon channel. This stack reduces the interface state density, improving threshold voltage variation, particularly in sub-22-nm devices. Simulations using self-consistent solutions of the Poisson and Schrödinger equations show the transfer of charge to the QD layers in three-state as well as nonvolatile memory cells.
The Euro-Argo education web site: using Argo data to teach data analysis and marine science
NASA Astrophysics Data System (ADS)
Byfield, Valborg; Scheurle, Carolyn; Gould, John; Macama, Emina; King, Brian
2013-04-01
The Euro-Argo education website (www.euroargo-edu.org) aims to make Argo and its data accessible to a non-specialist audience. The site is centred on a selection of floats, which have been chosen because of the insight they provide into key oceanographic processes, the physical and biogeochemical characteristics of different ocean regions around the world, and the role of the ocean in the global climate system. The float selection is a vehicle for teaching data analysis skills, linking these to current topics in the ocean and climate sciences. Each float in the selection has its own page, which provides access to the float data, data plots, background information on the ocean region in which the float can be found, and questions to guide data interpretation. Hidden 'model answers' allow users to check their understanding by comparing their own answers to those provided. The interactive component of the site also includes a series of quizzes, designed to teach data interpretation skills. These start at a basic level and take the students step by step through the most common ways to plot oceanographic data in space and time. More general background information covers the main aspects of the Argo programme, its history and applications, and basic technical information about the floats and sensors. 'World Tour' pages linked to the float selection provide information about the main ocean regions and link information from the Argo programme to oceanographic information from other sources such as satellite observations. The site is primarily aimed at young people between 11 and 18 years of age. However experience from using selected material from the site during science open days shows that children as young as 8-9 and adults of all ages also enjoy the challenge of using and interpreting the Argo data in different contexts.
Advanced, High Power, Next Scale, Wave Energy Conversion Device
DOE Office of Scientific and Technical Information (OSTI.GOV)
Mekhiche, Mike; Dufera, Hiz; Montagna, Deb
2012-10-29
The project conducted under DOE contract DE‐EE0002649 is defined as the Advanced, High Power, Next Scale, Wave Energy Converter. The overall project is split into a seven‐stage, gated development program. The work conducted under the DOE contract is OPT Stage Gate III work and a portion of Stage Gate IV work of the seven stage product development process. The project effort includes Full Concept Design & Prototype Assembly Testing building on our existing PowerBuoy technology to deliver a device with much increased power delivery. Scaling‐up from 150kW to 500kW power generating capacity required changes in the PowerBuoy design that addressedmore » cost reduction and mass manufacturing by implementing a Design for Manufacturing (DFM) approach. The design changes also focused on reducing PowerBuoy Installation, Operation and Maintenance (IO&M) costs which are essential to reducing the overall cost of energy. In this design, changes to the core PowerBuoy technology were implemented to increase capability and reduce both CAPEX and OPEX costs. OPT conceptually envisaged moving from a floating structure to a seabed structure. The design change from a floating structure to seabed structure would provide the implementation of stroke‐ unlimited Power Take‐Off (PTO) which has a potential to provide significant power delivery improvement and transform the wave energy industry if proven feasible.« less
Photo-Patterned Ion Gel Electrolyte-Gated Thin Film Transistors
NASA Astrophysics Data System (ADS)
Choi, Jae-Hong; Gu, Yuanyan; Hong, Kihyun; Frisbie, C. Daniel; Lodge, Timothy P.
2014-03-01
We have developed a novel fabrication route to pattern electrolyte thin films in electrolyte-gated transistors (EGTs) using a chemically crosslinkable ABA-triblock copolymer ion gel. In the self-assembly of poly[(styrene-r-vinylbenzylazide)-b-ethylene oxide-b-(styrene-r-vinylbenzylazide)] (SOS-N3) triblock copolymer and the ionic liquid, 1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide ([EMI][TFSI]), the azide groups of poly(styrene-r-vinylbenzylazide) (PS-N3) end-blocks in the cores can be chemically cross-linked via UV irradiation (λ = 254 nm). Impedance spectroscopy and small-angle X-ray scattering confirmed that ion transport and microstructure of the ion gel are not affected by UV cross-linking. Using this chemical cross-linking strategy, we demonstrate a photo-patterning of ion gels through a patterned mask and the fabricated electrolyte-gated thin film transistors with photo-patterned ion gels as high-capacitance gate insulators exhibited high device performance (low operation voltages and high on/off current ratios).
Aptamer-Binding Directed DNA Origami Pattern for Logic Gates.
Yang, Jing; Jiang, Shuoxing; Liu, Xiangrong; Pan, Linqiang; Zhang, Cheng
2016-12-14
In this study, an aptamer-substrate strategy is introduced to control programmable DNA origami pattern. Combined with DNA aptamer-substrate binding and DNAzyme-cutting, small DNA tiles were specifically controlled to fill into the predesigned DNA origami frame. Here, a set of DNA logic gates (OR, YES, and AND) are performed in response to the stimuli of adenosine triphosphate (ATP) and cocaine. The experimental results are confirmed by AFM imaging and time-dependent fluorescence changes, demonstrating that the geometric patterns are regulated in a controllable and programmable manner. Our approach provides a new platform for engineering programmable origami nanopatterns and constructing complex DNA nanodevices.
NASA Technical Reports Server (NTRS)
Allen, Gregory
2011-01-01
The NEPP Reconfigurable Field-Programmable Gate Array (FPGA) task has been charged to evaluate reconfigurable FPGA technologies for use in space. Under this task, the Xilinx single-event-immune, reconfigurable FPGA (SIRF) XQR5VFX130 device was evaluated for SEE. Additionally, the Altera Stratix-IV and SiliconBlue iCE65 were screened for single-event latchup (SEL).
Implementing a Microcontroller Watchdog with a Field-Programmable Gate Array (FPGA)
NASA Technical Reports Server (NTRS)
Straka, Bartholomew
2013-01-01
Reliability is crucial to safety. Redundancy of important system components greatly enhances reliability and hence safety. Field-Programmable Gate Arrays (FPGAs) are useful for monitoring systems and handling the logic necessary to keep them running with minimal interruption when individual components fail. A complete microcontroller watchdog with logic for failure handling can be implemented in a hardware description language (HDL.). HDL-based designs are vendor-independent and can be used on many FPGAs with low overhead.
Anomalous annealing of floating gate errors due to heavy ion irradiation
NASA Astrophysics Data System (ADS)
Yin, Yanan; Liu, Jie; Sun, Youmei; Hou, Mingdong; Liu, Tianqi; Ye, Bing; Ji, Qinggang; Luo, Jie; Zhao, Peixiong
2018-03-01
Using the heavy ions provided by the Heavy Ion Research Facility in Lanzhou (HIRFL), the annealing of heavy-ion induced floating gate (FG) errors in 34 nm and 25 nm NAND Flash memories has been studied. The single event upset (SEU) cross section of FG and the evolution of the errors after irradiation depending on the ion linear energy transfer (LET) values, data pattern and feature size of the device are presented. Different rates of annealing for different ion LET and different pattern are observed in 34 nm and 25 nm memories. The variation of the percentage of different error patterns in 34 nm and 25 nm memories with annealing time shows that the annealing of FG errors induced by heavy-ion in memories will mainly take place in the cells directly hit under low LET ion exposure and other cells affected by heavy ions when the ion LET is higher. The influence of Multiple Cell Upsets (MCUs) on the annealing of FG errors is analyzed. MCUs with high error multiplicity which account for the majority of the errors can induce a large percentage of annealed errors.
NASA Astrophysics Data System (ADS)
Ferraro, R.; Danzeca, S.; Brucoli, M.; Masi, A.; Brugger, M.; Dilillo, L.
2017-04-01
The need for upgrading the Total Ionizing Dose (TID) measurement resolution of the current version of the Radiation Monitoring system for the LHC complex has driven the research of new TID sensors. The sensors being developed nowadays can be defined as Systems On Chip (SOC) with both analog and digital circuitries embedded in the same silicon. A radiation tolerant TID Monitoring System (TIDMon) has been designed to allow the placement of the entire dosimeter readout electronics in very harsh environments such as calibration rooms and even in the mixed radiation field such as the one of the LHC complex. The objective of the TIDMon is to measure the effect of the TID on the new prototype of Floating Gate Dosimeter (FGDOS) without using long cables and with a reliable measurement system. This work introduces the architecture of the TIDMon, the radiation tolerance techniques applied on the controlling electronics as well as the design choices adopted for the system. Finally, results of several tests of TIDMon under different radiation environments such as gamma rays or mixed radiation field at CHARM are presented.
The Gates Malaria Partnership: a consortium approach to malaria research and capacity development.
Greenwood, Brian; Bhasin, Amit; Targett, Geoffrey
2012-05-01
Recently, there has been a major increase in financial support for malaria control. Most of these funds have, appropriately, been spent on the tools needed for effective prevention and treatment of malaria such as insecticide-treated bed nets, indoor residual spraying and artemisinin combination therapy. There has been less investment in the training of the scientists from malaria-endemic countries needed to support these large and increasingly complex malaria control programmes, especially in Africa. In 2000, with support from the Bill & Melinda Gates Foundation, the Gates Malaria Partnership was established to support postgraduate training of African scientists wishing to pursue a career in malaria research. The programme had three research capacity development components: a PhD fellowship programme, a postdoctoral fellowship programme and a laboratory infrastructure programme. During an 8-year period, 36 African PhD students and six postdoctoral fellows were supported, and two research laboratories were built in Tanzania. Some of the lessons learnt during this project--such as the need to improve PhD supervision in African universities and to provide better support for postdoctoral fellows--are now being applied to a successor malaria research capacity development programme, the Malaria Capacity Development Consortium, and may be of interest to other groups involved in improving postgraduate training in health sciences in African universities. © 2012 Blackwell Publishing Ltd.
NASA Astrophysics Data System (ADS)
Zhou, Weichang; Zhou, Yong; Peng, Yuehua; Zhang, Yong; Yin, Yanling; Tang, Dongsheng
2014-11-01
Optoelectronic diode based on PN heterostructure is one of the most fundamental device building blocks with extensive applications. Here we reported the fabrication and optoelectronic properties of GaTe/Sn : CdS nanoflake/nanowire PN heterojunction photodetectors. With high quality contacts between metal electrodes and Sn : CdS or GaTe, the electrical measurement of GaTe/Sn : CdS hybrid heterojunction under dark condition demonstrates an excellent diode characteristic with well-defined current rectification behavior. The photocurrent increases drastically under LED white light as well as red, green, UV illumination. The on-off ratio of current is about 100 for forward bias and 3000 for reverse bias, which clearly indicates the ultrahigh sensitivity of the heterostructure photodetector to white light. The responsivity and optical gain are determined to be 607 A W-1 and (1.06-2.16) × 105%, which is higher than previous reports of single GaTe or CdS nanostructures. Combination the Ids-Vds curves under different illumination power with energy band diagrams, we assign that both the light modulation effect under forward and reverse bias and the surface molecular oxygen adsorption/desorption mechanism are dominant to the electrical transport behavior of GaTe/Sn : CdS heterojunction. This heterostructure photodetector also shows good stability and fast response speed. Both the high photosensibility and fast response time described in the present study suggest strongly that the GaTe/Sn : CdS hybrid heterostructure is a promising candidate for photodetection, optical sensing and switching devices.
Reconfigurable OR and XOR logic gates based on dual responsive on-off-on micromotors.
Dong, Yonggang; Liu, Mei; Zhang, Hui; Dong, Bin
2016-04-21
In this study, we report a hemisphere-like micromotor. Intriguingly, the micromotor exhibits controllable on-off-on motion, which can be actuated by two different external stimuli (UV and NH3). Moreover, the moving direction of the micromotor can be manipulated by the direction in which UV and NH3 are applied. As a result, the motion accelerates when both stimuli are applied in the same direction and decelerates when the application directions are opposite to each other. More interestingly, the dual stimuli responsive micromotor can be utilized as a reconfigurable logic gate with UV and NH3 as the inputs and the motion of the micromotor as the output. By controlling the direction of the external stimuli, OR and XOR dual logic functions can be realized.
NASA Technical Reports Server (NTRS)
Allen, Gregory; Edmonds, Larry D.; Swift, Gary; Carmichael, Carl; Tseng, Chen Wei; Heldt, Kevin; Anderson, Scott Arlo; Coe, Michael
2010-01-01
We present a test methodology for estimating system error rates of Field Programmable Gate Arrays (FPGAs) mitigated with Triple Modular Redundancy (TMR). The test methodology is founded in a mathematical model, which is also presented. Accelerator data from 90 nm Xilins Military/Aerospace grade FPGA are shown to fit the model. Fault injection (FI) results are discussed and related to the test data. Design implementation and the corresponding impact of multiple bit upset (MBU) are also discussed.
Universal programmable logic gate and routing method
NASA Technical Reports Server (NTRS)
Vatan, Farrokh (Inventor); Akarvardar, Kerem (Inventor); Mojarradi, Mohammad M. (Inventor); Fijany, Amir (Inventor); Cristoloveanu, Sorin (Inventor); Kolawa, Elzbieta (Inventor); Blalock, Benjamin (Inventor); Chen, Suheng (Inventor); Toomarian, Nikzad (Inventor)
2009-01-01
An universal and programmable logic gate based on G.sup.4-FET technology is disclosed, leading to the design of more efficient logic circuits. A new full adder design based on the G.sup.4-FET is also presented. The G.sup.4-FET can also function as a unique router device offering coplanar crossing of signal paths that are isolated and perpendicular to one another. This has the potential of overcoming major limitations in VLSI design where complex interconnection schemes have become increasingly problematic.
Suthaparan, Aruppillai; Solhaug, Knut Asbjørn; Stensvand, Arne; Gislerød, Hans Ragnar
2017-10-01
Nighttime ultraviolet (UV) radiation, if applied properly, has a significant potential for management of powdery mildews in many crop species. In this study, the role of growth light duration, irradiance, a combination of both (daily light integral) and light spectral quality (blue or red) on the efficacy of UV treatments against powdery mildew caused by Podosphaera xanthii and the growth performance of cucumber plants was studied in growth chambers. Increasing daily light integral provided by high-pressure sodium lamps (HPS) decreased efficacy of nighttime UV treatments against P. xanthii, but it increased plant growth. Furthermore, the efficacy of nighttime UV decreased when day length was increased from 16 to 20h at a constant daily light integral. The efficacy of nighttime UV increased if red light was applied after UV treatment, showing the possibility of day length extension without reducing the effect of UV. Increasing the dose of blue light during daytime reduced the efficacy of nighttime UV in controlling the disease, whereas blue deficient growth light (<6% of blue) caused UV mediated curling of young leaves. Furthermore, application of blue light after nighttime UV reduced its disease control efficacy. This showed the importance of maintaining a minimum of blue light in the growth light before nighttime UV treatment. Findings from this study showed that optimization of nighttime UV for management of powdery mildew is dependent on the spectral composition of the photosynthetically active radiation. Copyright © 2017 Elsevier B.V. All rights reserved.
Reconfigurable OR and XOR logic gates based on dual responsive on-off-on micromotors
NASA Astrophysics Data System (ADS)
Dong, Yonggang; Liu, Mei; Zhang, Hui; Dong, Bin
2016-04-01
In this study, we report a hemisphere-like micromotor. Intriguingly, the micromotor exhibits controllable on-off-on motion, which can be actuated by two different external stimuli (UV and NH3). Moreover, the moving direction of the micromotor can be manipulated by the direction in which UV and NH3 are applied. As a result, the motion accelerates when both stimuli are applied in the same direction and decelerates when the application directions are opposite to each other. More interestingly, the dual stimuli responsive micromotor can be utilized as a reconfigurable logic gate with UV and NH3 as the inputs and the motion of the micromotor as the output. By controlling the direction of the external stimuli, OR and XOR dual logic functions can be realized.In this study, we report a hemisphere-like micromotor. Intriguingly, the micromotor exhibits controllable on-off-on motion, which can be actuated by two different external stimuli (UV and NH3). Moreover, the moving direction of the micromotor can be manipulated by the direction in which UV and NH3 are applied. As a result, the motion accelerates when both stimuli are applied in the same direction and decelerates when the application directions are opposite to each other. More interestingly, the dual stimuli responsive micromotor can be utilized as a reconfigurable logic gate with UV and NH3 as the inputs and the motion of the micromotor as the output. By controlling the direction of the external stimuli, OR and XOR dual logic functions can be realized. Electronic supplementary information (ESI) available: Fig. S1-S6 and Videos S1-S5. See DOI: 10.1039/c6nr00752j
ERIC Educational Resources Information Center
Zhu, Yi; Weng, T.; Cheng, Chung-Kuan
2009-01-01
Incorporating programmable logic devices (PLD) in digital design courses has become increasingly popular. The advantages of using PLDs, such as complex programmable logic devices (CPLDs) and field programmable gate arrays (FPGA), have been discussed before. However, previous studies have focused on the experiences from the point of view of the…
46 CFR 169.537 - Description of equipment for lifefloats.
Code of Federal Regulations, 2014 CFR
2014-10-01
... between the deck on which the life float(s) are stowed and the light draft of the vessel, (2) Have a... persons or more, the breaking strength must be at least 13.4 KN (3000 lbs.), (3) Be of a dark color, if synthetic, or of a type certified to be resistant to deterioration from ultraviolet light, and (4) Be stowed...
46 CFR 169.537 - Description of equipment for lifefloats.
Code of Federal Regulations, 2010 CFR
2010-10-01
... between the deck on which the life float(s) are stowed and the light draft of the vessel, (2) Have a... persons or more, the breaking strength must be at least 13.4 KN (3000 lbs.), (3) Be of a dark color, if synthetic, or of a type certified to be resistant to deterioration from ultraviolet light, and (4) Be stowed...
46 CFR 169.537 - Description of equipment for lifefloats.
Code of Federal Regulations, 2013 CFR
2013-10-01
... between the deck on which the life float(s) are stowed and the light draft of the vessel, (2) Have a... persons or more, the breaking strength must be at least 13.4 KN (3000 lbs.), (3) Be of a dark color, if synthetic, or of a type certified to be resistant to deterioration from ultraviolet light, and (4) Be stowed...
Grindy, Scott C; Holten-Andersen, Niels
2017-06-07
Control over the viscoelastic mechanical properties of hydrogels intended for use as biomedical materials has long been a goal of soft matter scientists. Recent research has shown that materials made from polymers with reversibly associating transient crosslinks are a promising strategy for controlling viscoelasticity in hydrogels, for example leading to systems with precisely tunable mechanical energy-dissipation. We and others have shown that bio-inspired histidine:transition metal ion complexes allow highly precise and tunable control over the viscoelastic properties of transient network hydrogels. In this paper, we extend the design of these hydrogels such that their viscoelastic properties respond to longwave UV radiation. We show that careful selection of the histidine:transition metal ion crosslink mixtures allows unique control over pre- and post-UV viscoelastic properties. We anticipate that our strategy for controlling stimuli-responsive viscoelastic properties will aid biomedical materials scientists in the development of soft materials with specific stress-relaxing or energy-dissipating properties.
G(sup 4)FET Implementations of Some Logic Circuits
NASA Technical Reports Server (NTRS)
Mojarradi, Mohammad; Akarvardar, Kerem; Cristoleveanu, Sorin; Gentil, Paul; Blalock, Benjamin; Chen, Suhan
2009-01-01
Some logic circuits have been built and demonstrated to work substantially as intended, all as part of a continuing effort to exploit the high degrees of design flexibility and functionality of the electronic devices known as G(sup 4)FETs and described below. These logic circuits are intended to serve as prototypes of more complex advanced programmable-logicdevice-type integrated circuits, including field-programmable gate arrays (FPGAs). In comparison with prior FPGAs, these advanced FPGAs could be much more efficient because the functionality of G(sup 4)FETs is such that fewer discrete components are needed to perform a given logic function in G(sup 4)FET circuitry than are needed perform the same logic function in conventional transistor-based circuitry. The underlying concept of using G(sup 4)FETs as building blocks of programmable logic circuitry was also described, from a different perspective, in G(sup 4)FETs as Universal and Programmable Logic Gates (NPO-41698), NASA Tech Briefs, Vol. 31, No. 7 (July 2007), page 44. A G(sup 4)FET can be characterized as an accumulation-mode silicon-on-insulator (SOI) metal oxide/semiconductor field-effect transistor (MOSFET) featuring two junction field-effect transistor (JFET) gates. The structure of a G(sup 4)FET (see Figure 1) is the same as that of a p-channel inversion-mode SOI MOSFET with two body contacts on each side of the channel. The top gate (G1), the substrate emulating a back gate (G2), and the junction gates (JG1 and JG2) can be biased independently of each other and, hence, each can be used to independently control some aspects of the conduction characteristics of the transistor. The independence of the actions of the four gates is what affords the enhanced functionality and design flexibility of G(sup 4)FETs. The present G(sup 4)FET logic circuits include an adjustable-threshold inverter, a real-time-reconfigurable logic gate, and a dynamic random-access memory (DRAM) cell (see Figure 2). The configuration of the adjustable-threshold inverter is similar to that of an ordinary complementary metal oxide semiconductor (CMOS) inverter except that an NMOSFET (a MOSFET having an n-doped channel and a p-doped Si substrate) is replaced by an n-channel G(sup 4)FET
A near-infrared light responsive c-di-GMP module-based AND logic gate in Shewanella oneidensis.
Hu, Yidan; Wu, Yichao; Mukherjee, Manisha; Cao, Bin
2017-01-31
A novel, biofilm-based AND logic gate was constructed in Shewanella oneidensis through a near-infrared (NIR) light responsive c-di-GMP module. The logic gate was demonstrated in microbial fuel cells with isopropyl β-d-thiogalactoside (IPTG) and NIR light as the inputs and electrical signals as the output.
Monolithically integrated Si gate-controlled light-emitting device: science and properties
NASA Astrophysics Data System (ADS)
Xu, Kaikai
2018-02-01
The motivation of this study is to develop a p-n junction based light emitting device, in which the light emission is conventionally realized using reverse current driving, by voltage driving. By introducing an additional terminal of insulated gate for voltage driving, a novel three-terminal Si light emitting device is described where both the light intensity and spatial light pattern of the device are controlled by the gate voltage. The proposed light emitting device employs injection-enhanced Si in avalanche mode where electric field confinement occurs in the corner of a reverse-biased p+n junction. It is found that, depending on the bias conditions, the light intensity is either a linear or a quadratic function of the applied gate voltage or the reverse-bias. Since the light emission is based on the avalanching mode, the Si light emitting device offers the potential for very large scale integration-compatible light emitters for inter- or intra-chip signal transmission and contactless functional testing of wafers.
NASA Astrophysics Data System (ADS)
Kwon, Dae Woong; Kim, Jang Hyun; Chang, Ji Soo; Kim, Sang Wan; Sun, Min-Chul; Kim, Garam; Kim, Hyun Woo; Park, Jae Chul; Song, Ihun; Kim, Chang Jung; Jung, U. In; Park, Byung-Gook
2010-11-01
A comprehensive study is done regarding stabilities under simultaneous stress of light and dc-bias in amorphous hafnium-indium-zinc-oxide thin film transistors. The positive threshold voltage (Vth) shift is observed after negative gate bias and light stress, and it is completely different from widely accepted phenomenon which explains that negative-bias stress results in Vth shift in the left direction by bias-induced hole-trapping. Gate current measurement is performed to explain the unusual positive Vth shift under simultaneous application of light and negative gate bias. As a result, it is clearly found that the positive Vth shift is derived from electron injection from gate electrode to gate insulator.
Contributions of visible and ultraviolet parts of sunlight to photoinhibition.
Hakala-Yatkin, Marja; Mäntysaari, Mika; Mattila, Heta; Tyystjärvi, Esa
2010-10-01
Photoinhibition is light-induced inactivation of PSII, and action spectrum measurements have shown that UV light causes photoinhibition much more efficiently than visible light. In the present study, we quantified the contribution of the UV part of sunlight in photoinhibition of PSII in leaves. Greenhouse-grown pumpkin leaves were pretreated with lincomycin to block the repair of photoinhibited PSII, and exposed to sunlight behind a UV-permeable or UV-blocking filter. Oxygen evolution and Chl fluorescence measurements showed that photoinhibition proceeds 35% more slowly under the UV-blocking than under the UV-permeable filter. Experiments with a filter that blocks UV-B but transmits UV-A and visible light revealed that UV-A light is almost fully responsible for the UV effect. The difference between leaves illuminated through a UV-blocking and UV-transparent filter disappeared when leaves of field-grown pumpkin plants were used. Thylakoids isolated from field-grown and greenhouse-grown plants were equally sensitive to UV light, and measurements of UV-induced fluorescence from leaves indicated that the protection of the field-grown plants was caused by substances that block the passage of UV light to the chloroplasts. Thus, the UV part of sunlight, especially the UV-A part, is potentially highly important in photoinhibition of PSII but the UV-screening compounds of plant leaves may offer almost complete protection against UV-induced photoinhibition.
Holck, Askild L; Liland, Kristian H; Drømtorp, Signe M; Carlehög, Mats; McLEOD, Anette
2018-01-01
Ten percent of all strong-evidence foodborne outbreaks in the European Union are caused by Salmonella related to eggs and egg products. UV light may be used to decontaminate egg surfaces and reduce the risk of human salmonellosis infections. The efficiency of continuous UV-C (254 nm) and pulsed UV light for reducing the viability of Salmonella Enteritidis, Listeria monocytogenes, and enterohemorrhagic Escherichia coli on eggs was thoroughly compared. Bacterial cells were exposed to UV-C light at fluences from 0.05 to 3.0 J/cm 2 (10 mW/cm 2 , for 5 to 300 s) and pulsed UV light at fluences from 1.25 to 18.0 J/cm 2 , resulting in reductions ranging from 1.6 to 3.8 log, depending on conditions used. Using UV-C light, it was possible to achieve higher reductions at lower fluences compared with pulsed UV light. When Salmonella was stacked on a small area or shielded in feces, the pulsed UV light seemed to have a higher penetration capacity and gave higher bacterial reductions. Microscopy imaging and attempts to contaminate the interior of the eggs with Salmonella through the eggshell demonstrated that the integrity of the eggshell was maintained after UV light treatments. Only minor sensory changes were reported by panelists when the highest UV doses were used. UV-C and pulsed UV light treatments appear to be useful decontamination technologies that can be implemented in continuous processing.
NASA Astrophysics Data System (ADS)
Hirayama, Ryuji; Shiraki, Atsushi; Nakayama, Hirotaka; Kakue, Takashi; Shimobaba, Tomoyoshi; Ito, Tomoyoshi
2017-07-01
We designed and developed a control circuit for a three-dimensional (3-D) light-emitting diode (LED) array to be used in volumetric displays exhibiting full-color dynamic 3-D images. The circuit was implemented on a field-programmable gate array; therefore, pulse-width modulation, which requires high-speed processing, could be operated in real time. We experimentally evaluated the developed system by measuring the luminance of an LED with varying input and confirmed that the system works appropriately. In addition, we demonstrated that the volumetric display exhibits different full-color dynamic two-dimensional images in two orthogonal directions. Each of the exhibited images could be obtained only from the prescribed viewpoint. Such directional characteristics of the system are beneficial for applications, including digital signage, security systems, art, and amusement.
Compact quantum random number generator based on superluminescent light-emitting diodes
NASA Astrophysics Data System (ADS)
Wei, Shihai; Yang, Jie; Fan, Fan; Huang, Wei; Li, Dashuang; Xu, Bingjie
2017-12-01
By measuring the amplified spontaneous emission (ASE) noise of the superluminescent light emitting diodes, we propose and realize a quantum random number generator (QRNG) featured with practicability. In the QRNG, after the detection and amplification of the ASE noise, the data acquisition and randomness extraction which is integrated in a field programmable gate array (FPGA) are both implemented in real-time, and the final random bit sequences are delivered to a host computer with a real-time generation rate of 1.2 Gbps. Further, to achieve compactness, all the components of the QRNG are integrated on three independent printed circuit boards with a compact design, and the QRNG is packed in a small enclosure sized 140 mm × 120 mm × 25 mm. The final random bit sequences can pass all the NIST-STS and DIEHARD tests.
Effect of UV irradiation on the apoptosis and necrosis of Jurkat cells using UV LEDs
NASA Astrophysics Data System (ADS)
Inada, Shunko A.; Amano, Hiroshi; Akasaki, Isamu; Morita, Akimichi; Kobayashi, Keiko
2009-02-01
Phototherapy is a very effective method for treating most of the incurable skin diseases. A fluorescent light bulb is used as a conventional UV light source for this type of therapy. However, infrared radiation from the light source sometimes causes serious problems on patient's health. In addition, the normal part of the skin is irradiated when a large fluorescent light bulb is used. Moreover, a conventional UV irradiation system is heavy and has a short lifetime and a high electrical power consumption. Therefore, a new UV light source for solving the problems of phototherapy is required. To realize low-power-consumption, lightweight and long-lifetime systems, group III nitride-based UV-A1 light-emitting diodes (LEDs) were investigated. We examined the UV LED irradiation of Jurkat cell, which is a tumor cell and more sensitive to UV light than a healthy cell. The numbers of apoptotic and necrotic cells were confirmed to be the same using a UV LED and a conventional lamp system. The UV LED showed the possibility of realizing a new UV light source for phototherapy.
Li, Bingyi; Chen, Liang; Yu, Wenyue; Xie, Yizhuang; Bian, Mingming; Zhang, Qingjun; Pang, Long
2018-01-01
With the development of satellite load technology and very large-scale integrated (VLSI) circuit technology, on-board real-time synthetic aperture radar (SAR) imaging systems have facilitated rapid response to disasters. A key goal of the on-board SAR imaging system design is to achieve high real-time processing performance under severe size, weight, and power consumption constraints. This paper presents a multi-node prototype system for real-time SAR imaging processing. We decompose the commonly used chirp scaling (CS) SAR imaging algorithm into two parts according to the computing features. The linearization and logic-memory optimum allocation methods are adopted to realize the nonlinear part in a reconfigurable structure, and the two-part bandwidth balance method is used to realize the linear part. Thus, float-point SAR imaging processing can be integrated into a single Field Programmable Gate Array (FPGA) chip instead of relying on distributed technologies. A single-processing node requires 10.6 s and consumes 17 W to focus on 25-km swath width, 5-m resolution stripmap SAR raw data with a granularity of 16,384 × 16,384. The design methodology of the multi-FPGA parallel accelerating system under the real-time principle is introduced. As a proof of concept, a prototype with four processing nodes and one master node is implemented using a Xilinx xc6vlx315t FPGA. The weight and volume of one single machine are 10 kg and 32 cm × 24 cm × 20 cm, respectively, and the power consumption is under 100 W. The real-time performance of the proposed design is demonstrated on Chinese Gaofen-3 stripmap continuous imaging. PMID:29495637
Structural Modification of Organic Thin-Film Transistors for Photosensor Application
NASA Astrophysics Data System (ADS)
Jeong, Hyeon Seok; Bae, Jin-Hyuk; Lee, Hyeonju; Ndikumana, Joel; Park, Jaehoon
2018-05-01
We investigated the light response characteristics of bottom-gate/top-contact organic TFTs fabricated using pentacene and polystyrene as an organic semiconductor and a polymeric insulator, respectively. The pentacene TFT with overlaps (50 μm) between the source and gate electrodes as well as between the drain and gate electrodes exhibited negligible hysteresis in its transfer characteristics upon reversal of the gate voltage sweep direction. When the TFTs were structurally modified to produce an underlap structure between the source and gate electrodes, clockwise hysteresis and a drain-current decrease were observed, which were further augmented by increasing the gate underlap (from 30 μm to 50 μm and 70 μm). Herein, these results are explained in terms of space charge formation and accumulation capacitance reduction. Importantly, we found that space charges formed under the source electrode contributed to the drain currents via light irradiation through the underlap region. Under constant bias conditions, the TFTs with gate underlap structures thus exhibited on-state drain current changes in response to light signals. In our study, an optimal photosensitivity exceeding 11 was achieved by the TFT with a 30 μm gate underlap. Consequently, we suggest that gate underlap structure modification is a viable means of implementing light responsiveness in organic TFTs.
An Evaluation of Flash Cells Used in Critical Applications
NASA Technical Reports Server (NTRS)
Katz, Rich; Flowers, David; Bergevin, Keith
2016-01-01
Due to the common use of Flash technology in many commercial and industrial Programmable Logic Devices (PLDs) such as FPGAs and mixed-signal microcontrollers, flash technology is being utilized in fuzed munition applications. This presents a long-term reliability issue for both DoD and NASA safety- and mission-critical applications. A thorough understanding of the data retention failure modes and statistics associated with Flash data retention is of vital concern to the fuze safety community. A key retention parameter for a flash cell is the threshold voltage (VTH), which is an indirect indicator of the amount of charge stored on the cells floating gate. Initial test results based on a study of charge loss in flash cells in an FPGA device is presented. Statistical data taken from a small sample set indicates quantifiable charge loss for devices stored at both room temperature and 150 C. Initial evaluation of the distribution of threshold voltage in a large sample set (800 devices) is presented. The magnitude of charge loss from exposure to electrostatic discharge and electromagnetic fields is measured and presented. Simulated data (and measured data as available) resultant from harsh-environment testing (neutron, heavy ion, EMP) is presented.
50. (no plate) Lens, lens pedestal, mercury float, drawing # ...
50. (no plate) Lens, lens pedestal, mercury float, drawing # 3101, sheet 1 of 2. Approved April 6, 1928. - Block Island Southeast Light, Spring Street & Mohegan Trail at Mohegan Bluffs, New Shoreham, Washington County, RI
A Compression Algorithm for Field Programmable Gate Arrays in the Space Environment
2011-12-01
Bit 1 ,Bit 0P . (V.3) Equation (V.3) is implemented with a string of XOR gates and Bit Basher blocks, as shown in Figure 31. As discussed in...5], the string of Bit Basher blocks are used to separate each 35-bit value into 35 one-bit values, and the string of XOR gates is used to
Qualification Strategies of Field Programmable Gate Arrays (FPGAs) for Space Application
NASA Technical Reports Server (NTRS)
Sheldon, Douglas; Schone, Harald
2005-01-01
This viewgraph document reviews the issue of using Field Programmable Gate Arrays (FPGAs) in Space Application, and the some of the strategies for qualifying the FPGA. Qualification and risk management of such complex systems requires new approaches. The paper presents a matrix approach to qualification has been presented that: - Complements historical specifications - Highlights the importance of device physics as a cornerstone to qualification. - Provides levels of risk management that expressly document trade offs. - Stresses the role of the FPGA vendor as team member in the development of modern spacecraft.
A software framework for pipelined arithmetic algorithms in field programmable gate arrays
NASA Astrophysics Data System (ADS)
Kim, J. B.; Won, E.
2018-03-01
Pipelined algorithms implemented in field programmable gate arrays are extensively used for hardware triggers in the modern experimental high energy physics field and the complexity of such algorithms increases rapidly. For development of such hardware triggers, algorithms are developed in C++, ported to hardware description language for synthesizing firmware, and then ported back to C++ for simulating the firmware response down to the single bit level. We present a C++ software framework which automatically simulates and generates hardware description language code for pipelined arithmetic algorithms.
Rusaczonek, Anna; Czarnocka, Weronika; Kacprzak, Sylwia; Witoń, Damian; Ślesak, Ireneusz; Szechyńska-Hebda, Magdalena; Gawroński, Piotr; Karpiński, Stanisław
2015-01-01
Plants coordinate their responses to various biotic and abiotic stresses in order to optimize their developmental and acclimatory programmes. The ultimate response to an excessive amount of stress is local induction of cell death mechanisms. The death of certain cells can help to maintain tissue homeostasis and enable nutrient remobilization, thus increasing the survival chances of the whole organism in unfavourable environmental conditions. UV radiation is one of the environmental factors that negatively affects the photosynthetic process and triggers cell death. The aim of this work was to evaluate a possible role of the red/far-red light photoreceptors phytochrome A (phyA) and phytochrome B (phyB) and their interrelations during acclimatory responses to UV stress. We showed that UV-C treatment caused a disturbance in photosystem II and a deregulation of photosynthetic pigment content and antioxidant enzymes activities, followed by increased cell mortality rate in phyB and phyAB null mutants. We also propose a regulatory role of phyA and phyB in CO2 assimilation, non-photochemical quenching, reactive oxygen species accumulation and salicylic acid content. Taken together, our results suggest a novel role of phytochromes as putative regulators of cell death and acclimatory responses to UV. PMID:26385378
Takulapalli, Bharath R
2010-02-23
Field-effect transistor-based chemical sensors fall into two broad categories based on the principle of signal transduction-chemiresistor or Schottky-type devices and MOSFET or inversion-type devices. In this paper, we report a new inversion-type device concept-fully depleted exponentially coupled (FDEC) sensor, using molecular monolayer floating gate fully depleted silicon on insulator (SOI) MOSFET. Molecular binding at the chemical-sensitive surface lowers the threshold voltage of the device inversion channel due to a unique capacitive charge-coupling mechanism involving interface defect states, causing an exponential increase in the inversion channel current. This response of the device is in opposite direction when compared to typical MOSFET-type sensors, wherein inversion current decreases in a conventional n-channel sensor device upon addition of negative charge to the chemical-sensitive device surface. The new sensor architecture enables ultrahigh sensitivity along with extraordinary selectivity. We propose the new sensor concept with the aid of analytical equations and present results from our experiments in liquid phase and gas phase to demonstrate the new principle of signal transduction. We present data from numerical simulations to further support our theory.
Pulse transmission transmitter including a higher order time derivate filter
Dress, Jr., William B.; Smith, Stephen F.
2003-09-23
Systems and methods for pulse-transmission low-power communication modes are disclosed. A pulse transmission transmitter includes: a clock; a pseudorandom polynomial generator coupled to the clock, the pseudorandom polynomial generator having a polynomial load input; an exclusive-OR gate coupled to the pseudorandom polynomial generator, the exclusive-OR gate having a serial data input; a programmable delay circuit coupled to both the clock and the exclusive-OR gate; a pulse generator coupled to the programmable delay circuit; and a higher order time derivative filter coupled to the pulse generator. The systems and methods significantly reduce lower-frequency emissions from pulse transmission spread-spectrum communication modes, which reduces potentially harmful interference to existing radio frequency services and users and also simultaneously permit transmission of multiple data bits by utilizing specific pulse shapes.
NASA Astrophysics Data System (ADS)
Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka
2013-04-01
We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.
NASA Astrophysics Data System (ADS)
Qi, Yadong; Bai, Shuju; Vogelmann, Thomas C.; Heisler, Gordon M.
2003-11-01
The depth of light penetration from the adaxial surfaces of the mature leaves of pecan (Carya illinoensis) was measured using a fiber optic microprobe system at four wavelengths: UV-B (310nm), UV-A (360 nm), blue light (430nm), and red light (680nm). The average thickness of the leaf adaxial epidermal layer was 15um and the total leaf thickness was 219um. The patterns of the light attenuation by the leaf tissues exhibited strong wavelength dependence. The leaf adaxial epidermal layer was chiefly responsible for absorbing the UV-A UV-B radiation. About 98% of 310 nm light was steeply attenuated within the first 5 um of the adaxial epidermis; thus, very little UV-B radiation was transmitted to the mesophyll tissues where contain photosynthetically sensitive sites. The adaxial epidermis also attenuated 96% of the UV-A radiation. In contrast, the blue and red light penetrated much deeper and was gradually attenutated by the leaves. The mesophyll tissues attenuated 17% of the blue light and 42% of the red light, which were available for photosynthesis use. Since the epidermal layer absorbed nearly all UV-B light, it acted as an effective filter screening out the harmful radiation and protecting photosynthetically sensitive tissues from the UV-B damage. Therefore, the epidermal function of the UV-B screening effectiveness can be regarded as one of the UV-B protection mechanisms in pecan.
Slowing DNA Translocation in a Nanofluidic Field-Effect Transistor.
Liu, Yifan; Yobas, Levent
2016-04-26
Here, we present an experimental demonstration of slowing DNA translocation across a nanochannel by modulating the channel surface charge through an externally applied gate bias. The experiments were performed on a nanofluidic field-effect transistor, which is a monolithic integrated platform featuring a 50 nm-diameter in-plane alumina nanocapillary whose entire length is surrounded by a gate electrode. The field-effect transistor behavior was validated on the gating of ionic conductance and protein transport. The gating of DNA translocation was subsequently studied by measuring discrete current dips associated with single λ-DNA translocation events under a source-to-drain bias of 1 V. The translocation speeds under various gate bias conditions were extracted by fitting event histograms of the measured translocation time to the first passage time distributions obtained from a simple 1D biased diffusion model. A positive gate bias was observed to slow the translocation of single λ-DNA chains markedly; the translocation speed was reduced by an order of magnitude from 18.4 mm/s obtained under a floating gate down to 1.33 mm/s under a positive gate bias of 9 V. Therefore, a dynamic and flexible regulation of the DNA translocation speed, which is vital for single-molecule sequencing, can be achieved on this device by simply tuning the gate bias. The device is realized in a conventional semiconductor microfabrication process without the requirement of advanced lithography, and can be potentially further developed into a compact electronic single-molecule sequencer.
Theoretical studies of floating-reference method for NIR blood glucose sensing
NASA Astrophysics Data System (ADS)
Shi, Zhenzhi; Yang, Yue; Zhao, Huijuan; Chen, Wenliang; Liu, Rong; Xu, Kexin
2011-03-01
Non-invasive blood glucose monitoring using NIR light has been suffered from the variety of optical background that is mainly caused by the change of human body, such as the change of temperature, water concentration, and so on. In order to eliminate these internal influence and external interference a so called floating-reference method has been proposed to provide an internal reference. From the analysis of the diffuse reflectance spectrum, a position has been found where diffuse reflection of light is not sensitive to the glucose concentrations. Our previous work has proved the existence of reference position using diffusion equation. However, since glucose monitoring generally use the NIR light in region of 1000-2000nm, diffusion equation is not valid because of the high absorption coefficient and small source-detector separations. In this paper, steady-state high-order approximate model is used to further investigate the existence of the floating reference position in semi-infinite medium. Based on the analysis of different optical parameters on the impact of spatially resolved reflectance of light, we find that the existence of the floating-reference position is the result of the interaction of optical parameters. Comparing to the results of Monte Carlo simulation, the applicable region of diffusion approximation and higher-order approximation for the calculation of floating-reference position is discussed at the wavelength of 1000nm-1800nm, using the intralipid solution of different concentrations. The results indicate that when the reduced albedo is greater than 0.93, diffusion approximation results are more close to simulation results, otherwise the high order approximation is more applicable.
An estimation methode for measurement of ultraviolet radiation during nondestructive testing
NASA Astrophysics Data System (ADS)
Hosseinipanah, M.; Movafeghi, A.; Farvadin, D.
2018-04-01
Dye penetrant testing and magnetic particle testing are among conventional NDT methods. For increased sensitivity, fluorescence dyes and particles can be used with ultraviolet (black) lights. UV flaw detection lights have different spectra. With the help of photo-filters, the output lights are transferred to UV-A and visible zones. UV-A light can be harmful to human eyes in some conditions. In this research, UV intensity and spectrum were obtained by a Radio-spectrometer for two different UV flaw detector lighting systems. According to the standards such as ASTM E709, UV intensity must be at least 10 W/m2 at a distance of 30 cm. Based on our measurements; these features not achieved in some lamps. On the other hand, intensity and effective intensity of UV lights must be below the some limits for prevention of unprotected eye damage. NDT centers are usually using some type of UV measuring devices. A method for the estimation of effective intensity of UV light has been proposed in this research.
Wang, Hanlin; Liu, Hongtao; Zhao, Qiang; Ni, Zhenjie; Zou, Ye; Yang, Jie; Wang, Lifeng; Sun, Yanqiu; Guo, Yunlong; Hu, Wenping; Liu, Yunqi
2017-08-01
Human eyes use retina photoreceptor cells to absorb and distinguish photons from different wavelengths to construct an image. Mimicry of such a process and extension of its spectral response into the near-infrared (NIR) is indispensable for night surveillance, retinal prosthetics, and medical imaging applications. Currently, NIR organic photosensors demand optical filters to reduce visible interference, thus making filter-free and anti-visible NIR imaging a challenging task. To solve this limitation, a filter-free and conformal, retina-inspired NIR organic photosensor is presented. Featuring an integration of photosensing and floating-gate memory modules, the device possesses an acute color distinguishing capability. In general, the retina-like photosensor transduces NIR (850 nm) into nonvolatile memory and acts as a dynamic photoswitch under green light (550 nm). In doing this, a filter-free but color-distinguishing photosensor is demonstrated that selectively converts NIR optical signals into nonvolatile memory. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
New down-converter for UV-stable perovskite solar cells: Phosphor-in-glass
NASA Astrophysics Data System (ADS)
Roh, Hee-Suk; Han, Gill Sang; Lee, Seongha; Kim, Sanghyun; Choi, Sungwoo; Yoon, Chulsoo; Lee, Jung-Kun
2018-06-01
Degradation of hybrid lead halide perovskite by UV light is a crucial issue that limits the commercialization of lead halide perovskite solar cells (PSCs). To address this problem, phosphor-in-glass (PiG) is used to convert UV to visible light. Down-conversion of UV light by PiG dramatically increases UV-stability of PSCs and enables PSCs to harvest UV light that is currently wasted. Performance of PSCs with PiG layer does not change significantly during 100 h-long UV-irradiation, while conventional PSCs degrade quickly by 1 h-long UV-irradiation. After 100 h long UV-irradiation, power conversion efficiency of PSCs with PiG is 440% larger than that of conventional PSCs. This result points a direction toward PSCs which are very stable and highly efficient under UV light.
Govorunova, Elena G; Sineshchekov, Oleg A; Janz, Roger; Liu, Xiaoqin; Spudich, John L
2015-08-07
Light-gated rhodopsin cation channels from chlorophyte algae have transformed neuroscience research through their use as membrane-depolarizing optogenetic tools for targeted photoactivation of neuron firing. Photosuppression of neuronal action potentials has been limited by the lack of equally efficient tools for membrane hyperpolarization. We describe anion channel rhodopsins (ACRs), a family of light-gated anion channels from cryptophyte algae that provide highly sensitive and efficient membrane hyperpolarization and neuronal silencing through light-gated chloride conduction. ACRs strictly conducted anions, completely excluding protons and larger cations, and hyperpolarized the membrane of cultured animal cells with much faster kinetics at less than one-thousandth of the light intensity required by the most efficient currently available optogenetic proteins. Natural ACRs provide optogenetic inhibition tools with unprecedented light sensitivity and temporal precision. Copyright © 2015, American Association for the Advancement of Science.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gaede, S; Jordan, K; Western University, London, ON
Purpose: To present a customized programmable moving insert for the ArcCHECK™ phantom that can, in a single delivery, check both entrance dosimetry, while simultaneously verifying the delivery of respiratory-gated VMAT. Methods: The cylindrical motion phantom uses a computer-controlled stepping motor to move an insert inside a stationery sleeve. Insert motion is programmable and can include rotational motion in addition to linear motion along the axis of the cylinder. The sleeve fits securely in the bore of the ArcCHECK™. Interchangeable inserts, including an A1SL chamber, optically-stimulated luminescence dosimeters, radiochromic film, or 3D gels, allow this combination to be used for commissioning,more » routine quality assurance, and patient-specific dosimetric verification of respiratory-gated VMAT. Before clinical implementation, the effect of a moving insert on the ArcCHECK™ measurements was considered. First, the measured dose to the ArcCHECK™ containing multiple inserts in the static position was compared to the calculated dose during multiple VMAT treatment deliveries. Then, dose was measured under both sinusoidal and real-patient motion conditions to determine any effect of the moving inserts on the ArcCHECK™ measurements. Finally, dose was measured during gated VMAT delivery to the same inserts under the same motion conditions to examine any effect of various beam “on-and-off” and dose rate ramp “up-and-down”. Multiple comparisons between measured and calculated dose to different inserts were also considered. Results: The pass rate for the static delivery exceeded 98% for all measurements (3%/3mm), suggesting a valid setup for entrance dosimetry. The pass rate was not altered for any measurement delivered under motion conditions. A similar Result was observed under gated VMAT conditions, including agreement of measured and calculated dose to the various inserts. Conclusion: Incorporating a programmable moving insert within the ArcCHECK™ phantom provides an efficient verification of respiratory-gated VMAT delivery that is useful during commissioning, routine quality assurance, and patient-specific dose verification. Prototype phantom development and testing was performed in collaboration with Modus Medical Devices Inc. (London, ON). No financial support was granted.« less
51. (no plate) Lens, lens pedestal, mercury float, shade holder ...
51. (no plate) Lens, lens pedestal, mercury float, shade holder installation, drawing # 3101, sheet 2 of 2. Approved April 6, 1928. - Block Island Southeast Light, Spring Street & Mohegan Trail at Mohegan Bluffs, New Shoreham, Washington County, RI
Federal Register 2010, 2011, 2012, 2013, 2014
2012-04-04
... to the point of origin. The restricted area will be marked by a lighted and signed floating buoy line... a signed floating buoy line without permission from the Supervisor of Shipbuilding, Conversion and...
Complete all-optical processing polarization-based binary logic gates and optical processors.
Zaghloul, Y A; Zaghloul, A R M
2006-10-16
We present a complete all-optical-processing polarization-based binary-logic system, by which any logic gate or processor can be implemented. Following the new polarization-based logic presented in [Opt. Express 14, 7253 (2006)], we develop a new parallel processing technique that allows for the creation of all-optical-processing gates that produce a unique output either logic 1 or 0 only once in a truth table, and those that do not. This representation allows for the implementation of simple unforced OR, AND, XOR, XNOR, inverter, and more importantly NAND and NOR gates that can be used independently to represent any Boolean expression or function. In addition, the concept of a generalized gate is presented which opens the door for reconfigurable optical processors and programmable optical logic gates. Furthermore, the new design is completely compatible with the old one presented in [Opt. Express 14, 7253 (2006)], and with current semiconductor based devices. The gates can be cascaded, where the information is always on the laser beam. The polarization of the beam, and not its intensity, carries the information. The new methodology allows for the creation of multiple-input-multiple-output processors that implement, by itself, any Boolean function, such as specialized or non-specialized microprocessors. Three all-optical architectures are presented: orthoparallel optical logic architecture for all known and unknown binary gates, singlebranch architecture for only XOR and XNOR gates, and the railroad (RR) architecture for polarization optical processors (POP). All the control inputs are applied simultaneously leading to a single time lag which leads to a very-fast and glitch-immune POP. A simple and easy-to-follow step-by-step algorithm is provided for the POP, and design reduction methodologies are briefly discussed. The algorithm lends itself systematically to software programming and computer-assisted design. As examples, designs of all binary gates, multiple-input gates, and sequential and non-sequential Boolean expressions are presented and discussed. The operation of each design is simply understood by a bullet train traveling at the speed of light on a railroad system preconditioned by the crossover states predetermined by the control inputs. The presented designs allow for optical processing of the information eliminating the need to convert it, back and forth, to an electronic signal for processing purposes. All gates with a truth table, including for example Fredkin, Toffoli, testable reversible logic, and threshold logic gates, can be designed and implemented using the railroad architecture. That includes any future gates not known today. Those designs and the quantum gates are not discussed in this paper.
Development of two-framing camera with large format and ultrahigh speed
NASA Astrophysics Data System (ADS)
Jiang, Xiaoguo; Wang, Yuan; Wang, Yi
2012-10-01
High-speed imaging facility is important and necessary for the formation of time-resolved measurement system with multi-framing capability. The framing camera which satisfies the demands of both high speed and large format needs to be specially developed in the ultrahigh speed research field. A two-framing camera system with high sensitivity and time-resolution has been developed and used for the diagnosis of electron beam parameters of Dragon-I linear induction accelerator (LIA). The camera system, which adopts the principle of light beam splitting in the image space behind the lens with long focus length, mainly consists of lens-coupled gated image intensifier, CCD camera and high-speed shutter trigger device based on the programmable integrated circuit. The fastest gating time is about 3 ns, and the interval time between the two frames can be adjusted discretely at the step of 0.5 ns. Both the gating time and the interval time can be tuned to the maximum value of about 1 s independently. Two images with the size of 1024×1024 for each can be captured simultaneously in our developed camera. Besides, this camera system possesses a good linearity, uniform spatial response and an equivalent background illumination as low as 5 electrons/pix/sec, which fully meets the measurement requirements of Dragon-I LIA.
Zhu, Pinkuan; Li, Qianwen; Azad, Sepideh M; Qi, Yu; Wang, Yiwen; Jiang, Yina; Xu, Ling
2018-01-01
Short-wave ultraviolet (UV-C) treatment represents a potent, clean and safe substitute to chemical sanitizers for fresh fruit preservation. However, the dosage requirement for microbial disinfection may have negative effects on fruit quality. In this study, UV-C was found to be more efficient in killing spores of Botrytis cinerea in dark and red light conditions when compared to white and blue light. Loss of the blue light receptor gene Bcwcl1 , a homolog of wc-1 in Neurospora crassa , led to hypersensitivity to UV-C in all light conditions tested. The expression of Bcuve1 and Bcphr1 , which encode UV-damage endonuclease and photolyase, respectively, were strongly induced by white and blue light in a Bcwcl1 -dependent manner. Gene mutation analyses of Bcuve1 and Bcphr1 indicated that they synergistically contribute to survival after UV-C treatment. In vivo assays showed that UV-C (1.0 kJ/m 2 ) abolished decay in drop-inoculated fruit only if the UV-C treatment was followed by a dark period or red light, while in contrast, typical decay appeared on UV-C irradiated fruits exposed to white or blue light. In summary, blue light enhances UV-C resistance in B. cinerea by inducing expression of the UV damage repair-related enzymes, while the efficiency of UV-C application for fruit surface disinfection can be enhanced in dark or red light conditions; these principles seem to be well conserved among postharvest fungal pathogens.
Readout of the UFFO Slewing Mirror Telescope to detect UV/optical photons from Gamma-Ray Bursts
NASA Astrophysics Data System (ADS)
Kim, J. E.; Lim, H.; Nam, J. W.; Brandt, S.; Budtz-Jørgensen, C.; Castro-Tirado, A. J.; Chen, P.; Choi, H. S.; Grossan, B.; Huang, M. A.; Jeong, S.; Jung, A.; Kim, M. B.; Kim, S.-W.; Lee, J.; Linder, E. V.; Liu, T.-C.; Na, G. W.; Panasyuk, M. I.; Park, I. H.; Ripa, J.; Reglero, V.; Smoot, G. F.; Svertilov, S.; Vedenkin, N.; Yashin, I.
2013-07-01
The Slewing Mirror Telescope (SMT) was proposed for rapid response to prompt UV/optical photons from Gamma-Ray Bursts (GRBs). The SMT is a key component of the Ultra-Fast Flash Observatory (UFFO)-pathfinder, which will be launched aboard the Lomonosov spacecraft at the end of 2013. The SMT utilizes a motorized mirror that slews rapidly forward to its target within a second after triggering by an X-ray coded mask camera, which makes unnecessary a reorientation of the entire spacecraft. Subsequent measurement of the UV/optical is accomplished by a 10 cm aperture Ritchey-Chrètien telescope and the focal plane detector of Intensified Charge-Coupled Device (ICCD). The ICCD is sensitive to UV/optical photons of 200-650 nm in wavelength by using a UV-enhanced S20 photocathode and amplifies photoelectrons at a gain of 104-106 in double Micro-Channel Plates. These photons are read out by a Kodak KAI-0340 interline CCD sensor and a CCD Signal Processor with 10-bit Analog-to-Digital Converter. Various control clocks for CCD readout are implemented using a Field Programmable Gate Array (FPGA). The SMT readout is in charge of not only data acquisition, storage and transfer, but also control of the slewing mirror, the ICCD high voltage adjustments, power distribution, and system monitoring by interfacing to the UFFO-pathfinder. These functions are realized in the FPGA to minimize power consumption and to enhance processing time. The SMT readout electronics are designed and built to meet the spacecraft's constraints of power consumption, mass, and volume. The entire system is integrated with the SMT optics, as is the UFFO-pathfinder. The system has been tested and satisfies the conditions of launch and those of operation in space: those associated with shock and vibration and those associated with thermal and vacuum, respectively. In this paper, we present the SMT readout electronics: the design, construction, and performance, as well as the results of space environment test.
ERIC Educational Resources Information Center
Ferreira, J. G.
2014-01-01
This article considers the possible contribution of the "kids in parks" programme offered at Golden Gate Highlands National Park to the professional development of teachers. Focus group interviews were held with teachers who participated in the programme, and an interview with open-ended questions was held with a learning facilitator…
ERIC Educational Resources Information Center
Corcoran, Thomas B.; Gerry, Gail B.
2010-01-01
In fall 2009, the Bill and Melinda Gates Foundation funded a three-year project (IB Access Project) with International Baccalaureate (IB) to increase participation of minority students and students in poverty in the Middle Years Programme (MYP) and Diploma Programme (DP). The IB Access Project seeks to do four things: (1) Improve teacher practice…
Light programmable organic transistor memory device based on hybrid dielectric
NASA Astrophysics Data System (ADS)
Ren, Xiaochen; Chan, Paddy K. L.
2013-09-01
We have fabricated the transistor memory devices based on SiO2 and polystyrene (PS) hybrid dielectric. The trap states densities with different semiconductors have been investigated and a maximum 160V memory window between programming and erasing is realized. For DNTT based transistor, the trapped electron density is limited by the number of mobile electrons in semiconductor. The charge transport mechanism is verified by light induced Vth shift effect. Furthermore, in order to meet the low operating power requirement of portable electronic devices, we fabricated the organic memory transistor based on AlOx/self-assembly monolayer (SAM)/PS hybrid dielectric, the effective capacitance of hybrid dielectric is 210 nF cm-2 and the transistor can reach saturation state at -3V gate bias. The memory window in transfer I-V curve is around 1V under +/-5V programming and erasing bias.
Two-color detection with charge sensitive infrared phototransistors
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kim, Sunmi, E-mail: kimsunmi@iis.u-tokyo.ac.jp; Kajihara, Yusuke; Komiyama, Susumu
2015-11-02
Highly sensitive two-color detection is demonstrated at wavelengths of 9 μm and 14.5 μm by using a charge sensitive infrared phototransistor fabricated in a triple GaAs/AlGaAs quantum well (QW) crystal. Two differently thick QWs (7 nm- and 9 nm-thicknesses) serve as photosensitive floating gates for the respective wavelengths via intersubband excitation: The excitation in the QWs is sensed by a third QW, which works as a conducting source-drain channel in the photosensitive transistor. The two spectral bands of detection are shown to be controlled by front-gate biasing, providing a hint for implementing voltage tunable ultra-highly sensitive detectors.
49 CFR Appendix A to Part 234 - Schedule of Civil Penalties 1
Code of Federal Regulations, 2010 CFR
2010-10-01
....219Gate arm lights and light cable 1,000 2,000 234.221Lamp voltage 1,000 2,000 234.223Gate arm 1,000 2,000... 234.251Standby power 5,000 7,500 234.253Flashing light units and lamp voltage 1,000 2,000 234.255Gate....265Timing relays and timing devices 1,000 2,000 234.267Insulation resistance tests, wires in trunking and...
Photonic Programmable Tele-Cloning Network.
Li, Wei; Chen, Ming-Cheng
2016-06-29
The concept of quantum teleportation allows an unknown quantum states to be broadcasted and processed in a distributed quantum network. The quantum information injected into the network can be diluted to distant multi-copies by quantum cloning and processed by arbitrary quantum logic gates which were programed in advance in the network quantum state. A quantum network combines simultaneously these fundamental quantum functions could lead to new intriguing applications. Here we propose a photonic programmable telecloning network based on a four-photon interferometer. The photonic network serves as quantum gate, quantum cloning and quantum teleportation and features experimental advantage of high brightness by photon recycling.
TID Effects of High-Z Material Spot Shields on FPGA Using MPTB Data
NASA Technical Reports Server (NTRS)
Hardage, Donna (Technical Monitor); Crain, S. H.; Mazur, J. E.; Looper, M. D.
2003-01-01
An experiment on the Microelectronics and Photonics Test Bed (MPTB) was testing lield programmable gate arrays using spot shields to extend the life of some of the devices being tested. It was expected that the unshielded parts would fail from a total ionizing dose (TID) and yet the opposite occurred. The data show that the devices failing from the TID effects are those with the spot shields attached. This effort is to determine the mechanism by which the environment is interacting with the high-Z material to enhance the TID in these field programmable gate arrays.
Hu, Kun; Lu, Houbing; Wang, Xu; Li, Feng; Liang, Futian; Jin, Ge
2015-01-01
The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.
NASA Technical Reports Server (NTRS)
Ng, Tak-kwong (Inventor); Herath, Jeffrey A. (Inventor)
2010-01-01
An integrated system mitigates the effects of a single event upset (SEU) on a reprogrammable field programmable gate array (RFPGA). The system includes (i) a RFPGA having an internal configuration memory, and (ii) a memory for storing a configuration associated with the RFPGA. Logic circuitry programmed into the RFPGA and coupled to the memory reloads a portion of the configuration from the memory into the RFPGA's internal configuration memory at predetermined times. Additional SEU mitigation can be provided by logic circuitry on the RFPGA that monitors and maintains synchronized operation of the RFPGA's digital clock managers.
Note: The design of thin gap chamber simulation signal source based on field programmable gate array
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hu, Kun; Wang, Xu; Li, Feng
The Thin Gap Chamber (TGC) is an important part of ATLAS detector and LHC accelerator. Targeting the feature of the output signal of TGC detector, we have designed a simulation signal source. The core of the design is based on field programmable gate array, randomly outputting 256-channel simulation signals. The signal is generated by true random number generator. The source of randomness originates from the timing jitter in ring oscillators. The experimental results show that the random number is uniform in histogram, and the whole system has high reliability.
A control system based on field programmable gate array for papermaking sewage treatment
NASA Astrophysics Data System (ADS)
Zhang, Zi Sheng; Xie, Chang; Qing Xiong, Yan; Liu, Zhi Qiang; Li, Qing
2013-03-01
A sewage treatment control system is designed to improve the efficiency of papermaking wastewater treatment system. The automation control system is based on Field Programmable Gate Array (FPGA), coded with Very-High-Speed Integrate Circuit Hardware Description Language (VHDL), compiled and simulated with Quartus. In order to ensure the stability of the data used in FPGA, the data is collected through temperature sensors, water level sensor and online PH measurement system. The automatic control system is more sensitive, and both the treatment efficiency and processing power are increased. This work provides a new method for sewage treatment control.
Basic mathematical function libraries for scientific computation
NASA Technical Reports Server (NTRS)
Galant, David C.
1989-01-01
Ada packages implementing selected mathematical functions for the support of scientific and engineering applications were written. The packages provide the Ada programmer with the mathematical function support found in the languages Pascal and FORTRAN as well as an extended precision arithmetic and a complete complex arithmetic. The algorithms used are fully described and analyzed. Implementation assumes that the Ada type FLOAT objects fully conform to the IEEE 754-1985 standard for single binary floating-point arithmetic, and that INTEGER objects are 32-bit entities. Codes for the Ada packages are included as appendixes.
1988-03-01
Applesoft language, a variant of floating-point BASIC that is supplied with the computer. As an intepreted language, Apple- soft BASIC executes fairly...fit with (VI , II ) array. I 8400 Sound bell and display warning when current limit exceeded. 8500-8510 Output HV pulse, read and display amplitude
Effect of ultraviolet light on water- and fat-soluble vitamins in cow and goat milk.
Guneser, O; Karagul Yuceer, Y
2012-11-01
The objective of this study was to investigate and compare the effects of UV light and heat treatment on vitamins A, B(2), C, and E in cow and goat milk. Vitamins were analyzed by reverse-phase high-pressure liquid chromatography. Ultraviolet and pasteurization treatments caused loss in vitamin C in milk. Pasteurization did not have any significant effect on vitamin B(2). However, UV light treatment decreased the amount of vitamin B(2) after several passes of milk through the UV system. In addition, UV light treatment decreased the amount of vitamins A and E. Vitamins C and E are more sensitive to UV light. UV light sensitivities of vitamins were C>E>A>B(2). These results show that UV light treatment decreases the vitamin content in milk. Also, the number of passes through the UV system and the initial amount of vitamins in milk are important factors affecting vitamin levels. Copyright © 2012 American Dairy Science Association. Published by Elsevier Inc. All rights reserved.
Far-infrared tangential interferometer/polarimeter design and installation for NSTX-U
Scott, E. R.; Barchfeld, R.; Riemenschneider, P.; ...
2016-08-09
Here, the Far-infrared Tangential Interferometer/Polarimeter (FIReTIP) system has been refurbished and is being reinstalled on the National Spherical Torus Experiment—Upgrade (NSTX-U) to supply real-time line-integrated core electron density measurements for use in the NSTX-U plasma control system (PCS) to facilitate real-time density feedback control of the NSTX-U plasma. Inclusion of a visible light heterodyne interferometer in the FIReTIP system allows for real-time vibration compensation due to movement of an internally mounted retroreflector and the FIReTIP front-end optics. Real-time signal correction is achieved through use of a National Instruments CompactRIO field-programmable gate array.
Sexton, Kristian J.; Zhao, Yan; Davis, Scott C.; Jiang, Shudong; Pogue, Brian W.
2017-01-01
The design of fluorescence imaging instruments for surgical guidance is rapidly evolving, and a key issue is to efficiently capture signals with high ambient room lighting. Here, we introduce a novel time-gated approach to fluorescence imaging synchronizing acquisition to the 120 Hz light of the room, with pulsed LED excitation and gated ICCD detection. It is shown that under bright ambient room light this technique allows for the detection of physiologically relevant nanomolar fluorophore concentrations, and in particular reduces the light fluctuations present from the room lights, making low concentration measurements more reliable. This is particularly relevant for the light bands near 700nm that are more dominated by ambient lights. PMID:28663895
All-optical switch and transistor gated by one stored photon.
Chen, Wenlan; Beck, Kristin M; Bücker, Robert; Gullans, Michael; Lukin, Mikhail D; Tanji-Suzuki, Haruka; Vuletić, Vladan
2013-08-16
The realization of an all-optical transistor, in which one "gate" photon controls a "source" light beam, is a long-standing goal in optics. By stopping a light pulse in an atomic ensemble contained inside an optical resonator, we realized a device in which one stored gate photon controls the resonator transmission of subsequently applied source photons. A weak gate pulse induces bimodal transmission distribution, corresponding to zero and one gate photons. One stored gate photon produces fivefold source attenuation and can be retrieved from the atomic ensemble after switching more than one source photon. Without retrieval, one stored gate photon can switch several hundred source photons. With improved storage and retrieval efficiency, our work may enable various new applications, including photonic quantum gates and deterministic multiphoton entanglement.
Development of high power UV irradiance meter calibration device
NASA Astrophysics Data System (ADS)
Xia, Ming; Gao, Jianqiang; Yin, Dejin; Li, Tiecheng
2016-09-01
With the rapid development of China's economy, many industries have more requirements for UV light applications, such as machinery manufacturing, aircraft manufacturing using high power UV light for detection, IT industry using high power UV light for curing component assembly, building materials, ink, paint and other industries using high power UV light for material aging test etc. In these industries, there are many measuring instruments for high power UV irradiance which are need to traceability. But these instruments are mostly imported instruments, these imported UV radiation meter are large range, wide wavelength range and high accuracy. They have exceeded our existing calibration capability. Expand the measuring range and improve the measurement accuracy of UV irradiance calibration device is a pressing matter of the moment. The newly developed high power UV irradiance calibration device is mainly composed of high power UV light, UV filter, condenser, UV light guide, optical alignment system, standard cavity absolute radiometer. The calibration device is using optical alignment system to form uniform light radiation field. The standard is standard cavity absolute radiometer, which can through the electrical substitution method, by means of adjusting and measuring the applied DC electric power at the receiver on a heating wire, which is equivalent to the thermo-electromotive force generated by the light radiation power, to achieve absolute optical radiation measurement. This method is the commonly used effective method for accurate measurement of light irradiation. The measuring range of calibration device is (0.2 200) mW/cm2, and the uncertainty of measurement results can reached 2.5% (k=2).
NASA Astrophysics Data System (ADS)
Feng, Liqiang; Liu, Katheryn
2018-05-01
An effective method to obtain the single attosecond pulses (SAPs) by using the multi-cycle plasmon-driven double optical gating (DOG) technology in the specifically designed metal nanostructures has been proposed and investigated. It is found that with the introduction of the crossed metal nanostructures along the driven and the gating polarization directions, not only the harmonic cutoff can be extended, but also the efficient high-order harmonic generation (HHG) at the very highest orders occurs only at one side of the region inside the nanostructure. As a result, a 93 eV supercontinuum with the near stable phase can be found. Further, by properly introducing an ultraviolet (UV) pulse into the driven laser polarization direction (which is defined as the DOG), the harmonic yield can be enhanced by two orders of magnitude in comparison with the singe polarization gating (PG) technology. However, as the polarized angle or the ellipticity of the UV pulse increase, the enhancement of the harmonic yield is slightly reduced. Finally, by superposing the selected harmonics from the DOG scheme, a 30 as SAP with intensity enhancement of two orders of magnitude can be obtained.
Long-term effects of UV light on contractility of rat arteries in vivo.
Morimoto, Yuji; Kohyama, Shinya; Nakai, Kanji; Matsuo, Hirotaka; Karasawa, Fujio; Kikuchi, Makoto
2003-10-01
Several studies have shown that UV irradiation may be effective for preventing vascular restenosis or vasopasm. However, the long-term effects of UV light on the physiological properties of vessels such as arterial tension have not been elucidated. We therefore studied the long-term effects of UV using rat carotid arteries treated with UV-B light (wavelength = 313 nm, total energy = 14 mJ/mm2). The animals were sacrificed at 1, 7 and 14 days after UV light exposure, and the carotid arteries were studied by light microscopy and the contractile responses of isolated arterial rings were recorded under isometric tension. UV treatment had induced a substantial loss of smooth muscle cells (SMC) along the entire circumference of the media on days 7 and 14, whereas loss of SMC on day 1 was negligible. Contractile responses of arteries that had been exposed to UV light were significantly reduced on days, 1, 7 and 14. The susceptibility of UV-treated arteries to phenylephrine and prostaglandin F2 alpha was significantly decreased on days 1 and 7, but decreased susceptibility was not seen on day 14. Acetylcholine-induced relaxations were not altered by UV treatment. These results suggest that the long-term effect of UV light is an attenuation of smooth muscle contractility without impairment of endothelial function.
NASA Astrophysics Data System (ADS)
Ahmad Bukhary, A. K.; Ruslan, M. Y.; Mohd. Fauzi, M. M.; Nicholas, S.; Muhamad Fahmi, M. H.; Izfa Riza, H.; Idris, A. B.
2015-09-01
A newly innovated and efficient UV-Pit-light Trap is described and the results of the experiments on its efficacy that were carried out within different oil palm age stands of the year 2013 were evaluated and compared with previous study year of 2010, with out the implementation of the UV-Pit-light Trap. In 2013 the UV-Pit-light Traps, the Malaise Traps, and the Pit-fall Traps were employed, while in 2010, the conventional canopy-height UV-Light Traps, Malaise Traps, and the Pit-fall Traps were employed. The UV-Pit-light traps caught more beetle and ant families, morpho-species, and individuals per species compared with the passive Pit-fall traps. The UV-Pit-light Trap targets different subsets of the oil palm beetles and ants' communities, specifying on epigaeic-related micro-habitats, with different oil palm age stands have different compositions of micro-habitats. The UV-Pit-light Traps have the dual quality for satisfying both the biological and statistical data requirements and evaluations. There were no significant difference between the UV-Pit-light Traps and the passive Pit-fall Traps, while the trapping difference with the Malaise traps for different seasons of the year 2013. The UV-Pit-light Traps and the Malaise Traps were complementary to each other, detecting the activities of beetles and ants around the epigaeic-related micro-habitats or having active flight activities respectively according to annual seasons. The UV-Pit-light Trap is an oil-palm specific type of passive trapping system, focusing on the insect species dwelling the upper-ground/epigaeic micro-habitats.
49. (no plate) 1,000 poind Mercury Float Pedestal and clock ...
49. (no plate) 1,000 poind Mercury Float Pedestal and clock case sheet no. 1 of 4 drawing # 5765. Approved 2-3-1916. - Block Island Southeast Light, Spring Street & Mohegan Trail at Mohegan Bluffs, New Shoreham, Washington County, RI
Federal Register 2010, 2011, 2012, 2013, 2014
2012-05-16
..., including a float plane dock and a heliport; (10) project roads leading from the float plane dock to the dam.... Although the Commission strongly encourages electronic filing, documents may also be paper- filed. To paper...
First measurements with Argo flots in the Southern Baltic Sea
NASA Astrophysics Data System (ADS)
Walczowski, Waldemar; Goszczko, Ilona; Wieczorek, Piotr; Merchel, Malgorzata; Rak, Daniel
2017-04-01
The Argo programme is one of the most important elements of the ocean observing system. Currently almost 4000 Argo floats profile global oceans and deliver real time data. Originally Argo floats were developed for open ocean observations. Therefore a standard float can dive up to 2000 m and deep Argo floats are under development. However in the last years the shallow shelf seas become also interesting for Argo users. Institute of Oceanology Polish Academy of Sciences (IOPAN) participates in the Euro-Argo research infrastructure, the European contribution to Argo system. A legal and governance framework (Euro-Argo ERIC) was set up in May 2014. For a few years IOPAN has deployed floats mostly in the Nordic Seas and the European Arctic region. In the end of 2016 the first Polish Argo float was deployed in the Southern Baltic Sea. Building on the successful experience with Argo floats deployed by the Finnish oceanographers in the Bothnian Sea and Gotland Basin, the IOPAN float was launched in the Bornholm Deep during the fall cruise of IOPAN research vessel Oceania. The standard APEX float equipped with 2-way Iridium communication was used and different modes of operation, required for the specific conditions in the shallow and low saline Baltic Sea, were tested. Settings for the Baltic float are different than for the oceanic mode and were frequently changed during the mission to find the optimum solution. Changing the float parking depth during the mission allows for the limited control of the float drift direction. Results of a high resolution numerical forecast model for the Baltic Sea proved to be a valuable tool for determining the parking depth of the float in the different flow regimes. Trajectory and drift velocity of the Argo float deployed in the Southern Baltic depended strongly on the atmospheric forcing (in particular wind speed and direction), what was clearly manifested during the 'Axel' storm passing over the deployment area in January 2017. The first deployment showed clearly that Argo floats can be a useful tool for the Baltic Sea monitoring as the important element of a more complex, multidisciplinary observing system.
USDA-ARS?s Scientific Manuscript database
Fecal contamination of produce is a known food safety risk. Measuring fluorescence responses to UV excitation is an established method for detecting such contamination. One measurement system utilizes a pulsed UV laser to induce a fluorescence response from fecal material and a gated intensified cam...
Hsu, Ming-Hung; Chang, Sheng-Po; Chang, Shoou-Jinn; Li, Chih-Wei; Li, Jyun-Yi; Lin, Chih-Chien
2018-05-01
In this study, zinc indium tin oxide thin-film transistors (ZITO TFTs) were fabricated by the radio frequency (RF) sputtering deposition method. Adding indium cations to ZnO by co-sputtering allows the development of ZITO TFTs with improved performance. Material characterization revealed that ZITO TFTs have a threshold voltage of 0.9 V, a subthreshold swing of 0.294 V/decade, a field-effect mobility of 5.32 cm2/Vs, and an on-off ratio of 4.7 × 105. Furthermore, an investigation of the photosensitivity of the fabricated devices was conducted by an illumination test. The responsivity of ZITO TFTs was 26 mA/W, with 330-nm illumination and a gate bias of -1 V. The UV-to-visible rejection ratio for ZITO TFTs was 2706. ZITO TFTs were observed to have greater UV light sensitivity than that of ZnO TFTs. We believe that these results suggest a significant step toward achieving high photosensitivity. In addition, the ZITO semiconductor system could be a promising candidate for use in high performance transparent TFTs, as well as further sensing applications.
Wang, Zhu-lou; Zhang, Wan-jie; Li, Chen-xi; Chen, Wen-liang; Xu, Ke-xin
2015-02-01
There are some challenges in near-infrared non-invasive blood glucose measurement, such as the low signal to noise ratio of instrument, the unstable measurement conditions, the unpredictable and irregular changes of the measured object, and etc. Therefore, it is difficult to extract the information of blood glucose concentrations from the complicated signals accurately. Reference measurement method is usually considered to be used to eliminate the effect of background changes. But there is no reference substance which changes synchronously with the anylate. After many years of research, our research group has proposed the floating reference method, which is succeeded in eliminating the spectral effects induced by the instrument drifts and the measured object's background variations. But our studies indicate that the reference-point will changes following the changing of measurement location and wavelength. Therefore, the effects of floating reference method should be verified comprehensively. In this paper, keeping things simple, the Monte Carlo simulation employing Intralipid solution with the concentrations of 5% and 10% is performed to verify the effect of floating reference method used into eliminating the consequences of the light source drift. And the light source drift is introduced through varying the incident photon number. The effectiveness of the floating reference method with corresponding reference-points at different wavelengths in eliminating the variations of the light source drift is estimated. The comparison of the prediction abilities of the calibration models with and without using this method shows that the RMSEPs of the method are decreased by about 98.57% (5%Intralipid)and 99.36% (10% Intralipid)for different Intralipid. The results indicate that the floating reference method has obvious effect in eliminating the background changes.
Multi-terminal memtransistors from polycrystalline monolayer molybdenum disulfide
NASA Astrophysics Data System (ADS)
Sangwan, Vinod K.; Lee, Hong-Sub; Bergeron, Hadallia; Balla, Itamar; Beck, Megan E.; Chen, Kan-Sheng; Hersam, Mark C.
2018-02-01
Memristors are two-terminal passive circuit elements that have been developed for use in non-volatile resistive random-access memory and may also be useful in neuromorphic computing. Memristors have higher endurance and faster read/write times than flash memory and can provide multi-bit data storage. However, although two-terminal memristors have demonstrated capacity for basic neural functions, synapses in the human brain outnumber neurons by more than a thousandfold, which implies that multi-terminal memristors are needed to perform complex functions such as heterosynaptic plasticity. Previous attempts to move beyond two-terminal memristors, such as the three-terminal Widrow-Hoff memristor and field-effect transistors with nanoionic gates or floating gates, did not achieve memristive switching in the transistor. Here we report the experimental realization of a multi-terminal hybrid memristor and transistor (that is, a memtransistor) using polycrystalline monolayer molybdenum disulfide (MoS2) in a scalable fabrication process. The two-dimensional MoS2 memtransistors show gate tunability in individual resistance states by four orders of magnitude, as well as large switching ratios, high cycling endurance and long-term retention of states. In addition to conventional neural learning behaviour of long-term potentiation/depression, six-terminal MoS2 memtransistors have gate-tunable heterosynaptic functionality, which is not achievable using two-terminal memristors. For example, the conductance between a pair of floating electrodes (pre- and post-synaptic neurons) is varied by a factor of about ten by applying voltage pulses to modulatory terminals. In situ scanning probe microscopy, cryogenic charge transport measurements and device modelling reveal that the bias-induced motion of MoS2 defects drives resistive switching by dynamically varying Schottky barrier heights. Overall, the seamless integration of a memristor and transistor into one multi-terminal device could enable complex neuromorphic learning and the study of the physics of defect kinetics in two-dimensional materials.
Federal Register 2010, 2011, 2012, 2013, 2014
2012-04-03
..., including a float plane dock and a heliport; (10) project roads leading from the float plane dock to the dam... electronic filing, documents may also be paper-filed. To paper-file, mail an original and seven copies to...
Portable Multispectral Colorimeter for Metallic Ion Detection and Classification
Jaimes, Ruth F. V. V.; Borysow, Walter; Gomes, Osmar F.; Salcedo, Walter J.
2017-01-01
This work deals with a portable device system applied to detect and classify different metallic ions as proposed and developed, aiming its application for hydrological monitoring systems such as rivers, lakes and groundwater. Considering the system features, a portable colorimetric system was developed by using a multispectral optoelectronic sensor. All the technology of quantification and classification of metallic ions using optoelectronic multispectral sensors was fully integrated in the embedded hardware FPGA ( Field Programmable Gate Array) technology and software based on virtual instrumentation (NI LabView®). The system draws on an indicative colorimeter by using the chromogen reagent of 1-(2-pyridylazo)-2-naphthol (PAN). The results obtained with the signal processing and pattern analysis using the method of the linear discriminant analysis, allows excellent results during detection and classification of Pb(II), Cd(II), Zn(II), Cu(II), Fe(III) and Ni(II) ions, with almost the same level of performance as for those obtained from the Ultravioled and visible (UV-VIS) spectrophotometers of high spectral resolution. PMID:28788082
Portable Multispectral Colorimeter for Metallic Ion Detection and Classification.
Braga, Mauro S; Jaimes, Ruth F V V; Borysow, Walter; Gomes, Osmar F; Salcedo, Walter J
2017-07-28
This work deals with a portable device system applied to detect and classify different metallic ions as proposed and developed, aiming its application for hydrological monitoring systems such as rivers, lakes and groundwater. Considering the system features, a portable colorimetric system was developed by using a multispectral optoelectronic sensor. All the technology of quantification and classification of metallic ions using optoelectronic multispectral sensors was fully integrated in the embedded hardware FPGA ( Field Programmable Gate Array) technology and software based on virtual instrumentation (NI LabView ® ). The system draws on an indicative colorimeter by using the chromogen reagent of 1-(2-pyridylazo)-2-naphthol (PAN). The results obtained with the signal processing and pattern analysis using the method of the linear discriminant analysis, allows excellent results during detection and classification of Pb(II), Cd(II), Zn(II), Cu(II), Fe(III) and Ni(II) ions, with almost the same level of performance as for those obtained from the Ultravioled and visible (UV-VIS) spectrophotometers of high spectral resolution.
An Undergraduate Survey Course on Asynchronous Sequential Logic, Ladder Logic, and Fuzzy Logic
ERIC Educational Resources Information Center
Foster, D. L.
2012-01-01
For a basic foundation in computer engineering, universities traditionally teach synchronous sequential circuit design, using discrete gates or field programmable gate arrays, and a microcomputers course that includes basic I/O processing. These courses, though critical, expose students to only a small subset of tools. At co-op schools like…
FPGAs in Space Environment and Design Techniques
NASA Technical Reports Server (NTRS)
Katz, Richard B.; Day, John H. (Technical Monitor)
2001-01-01
This viewgraph presentation gives an overview of Field Programmable Gate Arrays (FPGA) in the space environment and design techniques. Details are given on the effects of the space radiation environment, total radiation dose, single event upset, single event latchup, single event transient, antifuse technology and gate rupture, proton upsets and sensitivity, and loss of functionality.
Xue, Dandan; Zheng, Chunhong; Qu, Shengzu; Liao, Guanming; Fan, Congbin; Liu, Gang; Pu, Shouzhi
2017-06-01
A diarylethene bearing a triazole-linked rhodamine B unit was synthesized. Its fluorescent emission was significantly enhanced in the presence of protons or Cu 2 + due to transformation from the pirocyclic form to open-ring form. The fluorescence was quenched sequentially upon irradiation with 297 nm light based on the intramolecular fluorescence resonance energy transfer mechanism. In an acetonitrile: water binary solvent (1: 1 v/v), the compound showed significant fluorescent enhancement for Cu 2 + compared with a wide range of tested metal ions with a fast response and a limit of detection of 2.86 × 10 -8 mol L -1 . Using Cu 2 + and UV light as the chemical inputs, and fluorescence intensity at 597 nm as the output, a logic gate was developed at the molecular level. Moreover, the compound can be used with a high accuracy to detect Cu 2 + in a natural water sample. Copyright © 2016 John Wiley & Sons, Ltd.
NASA Astrophysics Data System (ADS)
Min, Xiaolin; Liu, Rong; Fu, Bo; Xu, Kexin
2017-06-01
In the non-invasive sensing of blood glucose by near-infrared diffuse reflectance spectroscopy, the spectrum is highly susceptible to the unstable and complicated background variations from the human body and the environment. In in vitro analyses, background variations are usually corrected by the spectrum of a standard reference sample that has similar optical properties to the analyte of interest. However, it is hard to find a standard sample for the in vivo measurement. Therefore, the floating reference measurement method is proposed to enable relative measurements in vivo, where the spectra under some special source-detector distance, defined as the floating reference position, are insensitive to the changes in glucose concentration due to the absorption effect and scattering effect. Because the diffuse reflectance signals at the floating reference positions only reflect the information on background variations during the measurement, they can be used as the internal reference. In this paper, the theoretical basis of the floating reference positions in a semi-infinite turbid medium was discussed based on the steady-state diffusion equation and its analytical solutions in a semi-infinite turbid medium (under the extrapolated boundary conditions). Then, Monte-Carlo (MC) simulations and in vitro experiments based on a custom-built continuous-moving spatially resolving double-fiber NIR measurement system, configured with two types of light source, a super luminescent diode (SLD) and a super-continuum laser, were carried out to verify the existence of the floating reference position in 5%, 10% and 20% Intralipid solutions. The results showed that the simulation values of the floating reference positions are close to the theoretical results, with a maximum deviation of approximately 0.3 mm in 1100-1320 nm. Great differences can be observed in 1340-1400 nm because the optical properties of Intralipid in this region don not satisfy the conditions of the steady-state diffusion equation. For the in vitro experiments, floating reference positions exist in 1220 nm and 1320 nm under two types of light source, and the results are quite close. However, the reference positions obtained from experiments are further from the light source compared with those obtained in the MC simulation. For the turbid media and the wavelengths investigated, the difference is up to 1 mm. This study is important for the design of optical fibers to be applied in the floating reference measurement.
Programmable resistive-switch nanowire transistor logic circuits.
Shim, Wooyoung; Yao, Jun; Lieber, Charles M
2014-09-10
Programmable logic arrays (PLA) constitute a promising architecture for developing increasingly complex and functional circuits through nanocomputers from nanoscale building blocks. Here we report a novel one-dimensional PLA element that incorporates resistive switch gate structures on a semiconductor nanowire and show that multiple elements can be integrated to realize functional PLAs. In our PLA element, the gate coupling to the nanowire transistor can be modulated by the memory state of the resistive switch to yield programmable active (transistor) or inactive (resistor) states within a well-defined logic window. Multiple PLA nanowire elements were integrated and programmed to yield a working 2-to-4 demultiplexer with long-term retention. The well-defined, controllable logic window and long-term retention of our new one-dimensional PLA element provide a promising route for building increasingly complex circuits with nanoscale building blocks.
Benrekia, Fayçal; Attari, Mokhtar; Bouhedda, Mounir
2013-01-01
This paper develops a primitive gas recognition system for discriminating between industrial gas species. The system under investigation consists of an array of eight micro-hotplate-based SnO2 thin film gas sensors with different selectivity patterns. The output signals are processed through a signal conditioning and analyzing system. These signals feed a decision-making classifier, which is obtained via a Field Programmable Gate Array (FPGA) with Very High-Speed Integrated Circuit Hardware Description Language. The classifier relies on a multilayer neural network based on a back propagation algorithm with one hidden layer of four neurons and eight neurons at the input and five neurons at the output. The neural network designed after implementation consists of twenty thousand gates. The achieved experimental results seem to show the effectiveness of the proposed classifier, which can discriminate between five industrial gases. PMID:23529119
Mondon, P; Shahin, M M
1992-05-01
Genetic effects of UV-A, UV-B, UV-C, and the combination of 8-methoxypsoralen (8-MOP) with UV-A or visible light were studied in the haploid strain XV185-14C and diploid strain D5 of Saccharomyces cerevisiae. The induction of his+, lys+, and hom+ reverse mutations was measured in strain XV185-14C. In strain D5 we measured the induction of genetically altered colonies, particularly twin spot colonies arising from a mitotic crossing-over. UV-C and UV-B induced point mutations at the three loci in the haploid strain and mitotic crossing-over and other genetic alterations in the diploid strain. UV-C was more mutagenic and recombinogenic than UV-B. UV-A or visible light alone did not induce genotoxic effects at the doses tested. However, UV-A plus 8-MOP produced lethal and mutagenic effects in the haploid strain XV185-14C, although mutagenic activity was less than that of UV-B. Visible light plus 8-MOP also induced genotoxic effects in strain XV185-14C. In the diploid strain D5, UV-A plus 8-MOP induced a higher frequency of genetic alterations than UV-B at comparative doses. Visible light plus 8-MOP was also genetically active in strain D5. The haploid strain was more sensitive to the lethal effects of UV-C, UV-B, UV-A, and impure visible light plus 8-MOP than the diploid strain.
NASA Astrophysics Data System (ADS)
Varma, Tarun; Periasamy, C.; Boolchandani, Dharmendar
2018-02-01
In this paper, we report the simulation, fabrication and characterisation of UV photo-detectors with bottom gate ZnO Thin Film Transistors (TFTs), grown on silicon at room temperature using RF magnetron sputtering process. The static performance of these detectors have been explored by varying the channel lengths (6 μm and 12 μm). The fabricated devices show low leakage currents with threshold voltages of 1.18 & 2.33 V, sub-threshold swings of 13.5 & 12.8 V/dec for channel lengths of 6 μm and 12 μm TFT, respectively. They also exhibit superior electrical characteristics with an ON-OFF ratio of the order of 3. The detector was also tested for device stability, with the transfer characteristics of the TFTs, which got deteriorated mainly by the negative bias-stress. The TFTs were further tested for UV detector applications and found to exhibit good photo-response.
NASA Astrophysics Data System (ADS)
Kamitake, Hiroki; Uenuma, Mutsunori; Okamoto, Naofumi; Horita, Masahiro; Ishikawa, Yasuaki; Yamashita, Ichro; Uraoka, Yukiharu
2015-05-01
We report a nanodot (ND) floating gate memory (NFGM) with a high-density ND array formed by a biological nano process. We utilized two kinds of cage-shaped proteins displaying SiO2 binding peptide (minTBP-1) on their outer surfaces: ferritin and Dps, which accommodate cobalt oxide NDs in their cavities. The diameters of the cobalt NDs were regulated by the cavity sizes of the proteins. Because minTBP-1 is strongly adsorbed on the SiO2 surface, high-density cobalt oxide ND arrays were obtained by a simple spin coating process. The densities of cobalt oxide ND arrays based on ferritin and Dps were 6.8 × 1011 dots cm-2 and 1.2 × 1012 dots cm-2, respectively. After selective protein elimination and embedding in a metal-oxide-semiconductor (MOS) capacitor, the charge capacities of both ND arrays were evaluated by measuring their C-V characteristics. The MOS capacitor embedded with the Dps ND array showed a wider memory window than the device embedded with the ferritin ND array. Finally, we fabricated an NFGM with a high-density ND array based on Dps, and confirmed its competent writing/erasing characteristics and long retention time.
Paydavosi, Sarah; Aidala, Katherine E; Brown, Patrick R; Hashemi, Pouya; Supran, Geoffrey J; Osedach, Timothy P; Hoyt, Judy L; Bulović, Vladimir
2012-03-14
Retention and diffusion of charge in tris(8-hydroxyquinoline) aluminum (Alq(3)) molecular thin films are investigated by injecting electrons and holes via a biased conductive atomic force microscopy tip into the Alq(3) films. After the charge injection, Kelvin force microscopy measurements reveal minimal changes with time in the spatial extent of the trapped charge domains within Alq(3) films, even for high hole and electron densities of >10(12) cm(-2). We show that this finding is consistent with the very low mobility of charge carriers in Alq(3) thin films (<10(-7) cm(2)/(Vs)) and that it can benefit from the use of Alq(3) films as nanosegmented floating gates in flash memory cells. Memory capacitors using Alq(3) molecules as the floating gate are fabricated and measured, showing durability over more than 10(4) program/erase cycles and the hysteresis window of up to 7.8 V, corresponding to stored charge densities as high as 5.4 × 10(13) cm(-2). These results demonstrate the potential for use of molecular films in high storage capacity nonvolatile memory cells. © 2012 American Chemical Society
Gates, GAVI, the glorious global funds and more: all you ever wanted to know.
Nossal, Gustav J V
2003-02-01
Global immunization programmes have achieved some remarkable successes. In 1977, Frank Fenner's Commission declared smallpox to have been eradicated by an 11-year-long intensive campaign. The Expanded Programme on Immunization encompassed six important childhood vaccines and reached over three-quarters of the world's children. Polio eradication has gone remarkably well, with only 10 out of 200 countries reporting residual cases. But amidst all the good news, there is also bad news. Coverage is variable; infrastructure is crumbling; and newer vaccines are not being incorporated in many country programmes. The Bill and Melinda Gates Foundation has introduced a new dynamic here. From their initial gift of $100 million in December 1998, their commitment to date is US$1.5 billion - and rising. At the centre is a Global Children's Vaccine Fund which permitted the launch, in January 2000, of the Global Alliance for Vaccines and Immunization. This is targeted to the 74 poorest countries of the world and is designed to improve vaccination infrastructure, to purchase newer vaccines and to support research and development. Even before we know how successful this programme will be, it has had its imitators. The Global Fund to Fight AIDS, TB and Malaria borrowed many concepts from GAVI. The Global Alliance for Improved Nutrition announced in May 2002 does so as well, and is heavily supported by Gates. Highly effective parasite control programmes antedate all this but will be much strengthened. However, we still face a sizeable budgetary gap both for research and for bringing the best advances to all people who need them.
Pruttivarasin, Thaned; Katori, Hidetoshi
2015-11-01
We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.
Photonic Programmable Tele-Cloning Network
Li, Wei; Chen, Ming-Cheng
2016-01-01
The concept of quantum teleportation allows an unknown quantum states to be broadcasted and processed in a distributed quantum network. The quantum information injected into the network can be diluted to distant multi-copies by quantum cloning and processed by arbitrary quantum logic gates which were programed in advance in the network quantum state. A quantum network combines simultaneously these fundamental quantum functions could lead to new intriguing applications. Here we propose a photonic programmable telecloning network based on a four-photon interferometer. The photonic network serves as quantum gate, quantum cloning and quantum teleportation and features experimental advantage of high brightness by photon recycling. PMID:27353838
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pruttivarasin, Thaned, E-mail: thaned.pruttivarasin@riken.jp; Katori, Hidetoshi; Innovative Space-Time Project, ERATO, JST, Bunkyo-ku, Tokyo 113-8656
We present a compact field-programmable gate array (FPGA) based pulse sequencer and radio-frequency (RF) generator suitable for experiments with cold trapped ions and atoms. The unit is capable of outputting a pulse sequence with at least 32 transistor-transistor logic (TTL) channels with a timing resolution of 40 ns and contains a built-in 100 MHz frequency counter for counting electrical pulses from a photo-multiplier tube. There are 16 independent direct-digital-synthesizers RF sources with fast (rise-time of ∼60 ns) amplitude switching and sub-mHz frequency tuning from 0 to 800 MHz.
Mofidi, Alexander A; Meyer, Ernest A; Wallis, Peter M; Chou, Connie I; Meyer, Barbara P; Ramalingam, Shivaji; Coffey, Bradley M
2002-04-01
This study measured the effect of germicidal ultraviolet (UV) light on Giardia lamblia and Giardia muris cysts, as determined by their infectivity in Mongolian gerbils and CD-1 mice, respectively. Reduction of cyst infectivity due to UV exposure was quantified by applying most probable number techniques. Controlled bench-scale, collimated-beam tests exposed cysts suspended in filtered natural water to light from a low-pressure UV lamp. Both G. lamblia and G. muris cysts showed similar sensitivity to UV light. At 3 mJ/cm2, a dose 10-fold lower than what large-scale UV reactors may be designed to provide, > 2-log10 (99 percent) inactivation was observed. These results, combined with previously published data showing other protozoa and bacteria have similar, high sensitivity to UV light, establish that UV disinfection of drinking water is controlled by viruses which may require over 10-fold more UV dose for the same level of control.
Buonanno, Manuela; Stanislauskas, Milda; Ponnaiya, Brian; Bigelow, Alan W; Randers-Pehrson, Gerhard; Xu, Yanping; Shuryak, Igor; Smilenov, Lubomir; Owens, David M; Brenner, David J
2016-01-01
UVC light generated by conventional germicidal lamps is a well-established anti-microbial modality, effective against both bacteria and viruses. However, it is a human health hazard, being both carcinogenic and cataractogenic. Earlier studies showed that single-wavelength far-UVC light (207 nm) generated by excimer lamps kills bacteria without apparent harm to human skin tissue in vitro. The biophysical explanation is that, due to its extremely short range in biological material, 207 nm UV light cannot penetrate the human stratum corneum (the outer dead-cell skin layer, thickness 5-20 μm) nor even the cytoplasm of individual human cells. By contrast, 207 nm UV light can penetrate bacteria and viruses because these cells are physically much smaller. To test the biophysically-based hypothesis that 207 nm UV light is not cytotoxic to exposed mammalian skin in vivo. Hairless mice were exposed to a bactericidal UV fluence of 157 mJ/cm2 delivered by a filtered Kr-Br excimer lamp producing monoenergetic 207-nm UV light, or delivered by a conventional 254-nm UV germicidal lamp. Sham irradiations constituted the negative control. Eight relevant cellular and molecular damage endpoints including epidermal hyperplasia, pre-mutagenic UV-associated DNA lesions, skin inflammation, and normal cell proliferation and differentiation were evaluated in mice dorsal skin harvested 48 h after UV exposure. While conventional germicidal UV (254 nm) exposure produced significant effects for all the studied skin damage endpoints, the same fluence of 207 nm UV light produced results that were not statistically distinguishable from the zero exposure controls. As predicted by biophysical considerations and in agreement with earlier in vitro studies, 207-nm light does not appear to be significantly cytotoxic to mouse skin. These results suggest that excimer-based far-UVC light could potentially be used for its anti-microbial properties, but without the associated hazards to skin of conventional germicidal UV lamps.
NASA Astrophysics Data System (ADS)
Hut, Rolf; Bogaard, Thom
2017-04-01
Throwing something in a river and seeing how fast it floats downstream is the first thing that every hydrologists does when encountering a new river. Using a collection of floats allows estimation of gauge surface water velocity and dispersion characteristics. To use floats over long (hundreds of kilometers) stretches of river requires either a crew that keeps an eye on the floats (labor intensive) or having high-tech floats that upload their location on regular intervals, such that they can be retrieved at the end of the experiment. GPS floats with communication units have been custom build by scientists before. Connecting GPS units to GSM modems used to require deep knowledge on micro-electronics and network protocols. In this work we present a version that is build using only off-the-shelf electronics that require no deep knowledge of either micro electronics nor network protocols. The new cellular enabled Particle Electron development board made it possible to connect a Sparkfun OpenLog (SD-card based logger) to a GPS tracker with no soldering and little programming. Because scientist can program the device themselves, settings like sample time can be adapted to the needs of specific experiments and additional sensors can be easily added. When writing GPS location every minute to SD and reporting every fifteen minutes online, our logger can run for three days on a single 2200 mAh LiPo battery (provided with the Particle Electron). Cost of components for our logger is less than 150. The durability of our GPS loggers will be tested during a field campaign at the end of January 2017 where 15 floats will float down the Irrawaddy river over a length of more than 200 km, during two days.
NASA Astrophysics Data System (ADS)
Jasenak, Brian
2017-02-01
Ultraviolet light-emitting diode (UV LED) adoption is accelerating; they are being used in new applications such as UV curing, germicidal irradiation, nondestructive testing, and forensic analysis. In many of these applications, it is critically important to produce a uniform light distribution and consistent surface irradiance. Flat panes of fused quartz, silica, or glass are commonly used to cover and protect UV LED arrays. However, they don't offer the advantages of an optical lens design. An investigation was conducted to determine the effect of a secondary glass optic on the uniformity of the light distribution and irradiance. Glass optics capable of transmitting UV-A, UV-B, and UV-C wavelengths can improve light distribution, uniformity, and intensity. In this work, two simulation studies were created to illustrate distinct irradiance patterns desirable for potential real world applications. The first study investigates the use of a multi-UV LED array and optic to create a uniform irradiance pattern on the flat two dimensional (2D) target surface. The uniformity was improved by designing both the LED array and molded optic to produce a homogenous pattern. The second study investigated the use of an LED light source and molded optic to improve the light uniformity on the inside of a canister. The case study illustrates the requirements for careful selection of LED based on light distribution and subsequent design of optics. The optic utilizes total internal reflection to create optimized light distribution. The combination of the LED and molded optic showed significant improvement in uniformity on the inner surface of the canister. The simulations illustrate how the application of optics can significantly improve UV light distribution which can be critical in applications such as UV curing and sterilization.
100-nm gate lithography for double-gate transistors
NASA Astrophysics Data System (ADS)
Krasnoperova, Azalia A.; Zhang, Ying; Babich, Inna V.; Treichler, John; Yoon, Jung H.; Guarini, Kathryn; Solomon, Paul M.
2001-09-01
The double gate field effect transistor (FET) is an exploratory device that promises certain performance advantages compared to traditional CMOS FETs. It can be scaled down further than the traditional devices because of the greater electrostatic control by the gates on the channel (about twice as short a channel length for the same gate oxide thickness), has steeper sub-threshold slope and about double the current for the same width. This paper presents lithographic results for double gate FET's developed at IBM's T. J. Watson Research Center. The device is built on bonded wafers with top and bottom gates self-aligned to each other. The channel is sandwiched between the top and bottom polysilicon gates and the gate length is defined using DUV lithography. An alternating phase shift mask was used to pattern gates with critical dimensions of 75 nm, 100 nm and 125 nm in photoresist. 50 nm gates in photoresist have also been patterned by 20% over-exposure of nominal 100 nm lines. No trim mask was needed because of a specific way the device was laid out. UV110 photoresist from Shipley on AR-3 antireflective layer were used. Process windows, developed and etched patterns are presented.
Siipola, Sari M; Kotilainen, Titta; Sipari, Nina; Morales, Luis O; Lindfors, Anders V; Robson, T Matthew; Aphalo, Pedro J
2015-05-01
Plants synthesize phenolic compounds in response to certain environmental signals or stresses. One large group of phenolics, flavonoids, is considered particularly responsive to ultraviolet (UV) radiation. However, here we demonstrate that solar blue light stimulates flavonoid biosynthesis in the absence of UV-A and UV-B radiation. We grew pea plants (Pisum sativum cv. Meteor) outdoors, in Finland during the summer, under five types of filters differing in their spectral transmittance. These filters were used to (1) attenuate UV-B; (2) attenuate UV-B and UV-A < 370 nm; (3) attenuate UV-B and UV-A; (4) attenuate UV-B, UV-A and blue light; and (5) as a control not attenuating these wavebands. Attenuation of blue light significantly reduced the flavonoid content in leaf adaxial epidermis and reduced the whole-leaf concentrations of quercetin derivatives relative to kaempferol derivatives. In contrast, UV-B responses were not significant. These results show that pea plants regulate epidermal UV-A absorbance and accumulation of individual flavonoids by perceiving complex radiation signals that extend into the visible region of the solar spectrum. Furthermore, solar blue light instead of solar UV-B radiation can be the main regulator of phenolic compound accumulation in plants that germinate and develop outdoors. © 2014 John Wiley & Sons Ltd.
Physiological limit of the daily endogenous cholecalciferol synthesis from UV light in cattle.
Hymøller, L; Jensen, S K; Kaas, P; Jakobsen, J
2017-04-01
The link between UV light (sunlight) and endogenous cholecalciferol (vitamin D 3 ) synthesis in the skin of humans has been known for more than a 100 years, since doctors for the first time successfully used UV light to cure rickets in children. Years later, it was shown that UV light also had a significant effect on the cholecalciferol status in the body of cattle. The cholecalciferol status in the body is measured as the plasma concentration of 25-hydroxycholecalciferol, which in cattle and humans is the major circulating metabolite of cholecalciferol. Very little is, however, known about the quantitative efficiency of UV light as a source of cholecalciferol in cattle nutrition and physiology. Hence, the aim of this study was to determine the efficiency of using UV light for increasing the plasma 25-hydroxycholecalciferol concentration in cholecalciferol-deprived cattle. Twelve cows deprived of cholecalciferol for 6 months were divided into three treatment groups and exposed to UV light for 30, 90 or 120 min/day during 28 days. UV-light wavelengths ranged from 280 to 415 nm and 30-min exposure to the UV light was equivalent to 60-min average summer-sunlight exposure at 56 °N. Blood samples were collected every 3-4 days and analysed for 25-hydroxycholecalciferol and cholecalciferol. Results showed that increasing the exposure time from 90-120 min/day did not change the slope of the daily increase in plasma 25-hydroxycholecalciferol. Hence, it appears that cholecalciferol-deprived dairy cattle are able to increase their plasma 25-hydroxycholecalciferol concentration by a maximum of 1 ng/ml/day from UV-light exposure. Journal of Animal Physiology and Animal Nutrition © 2016 Blackwell Verlag GmbH.
Takeuchi, Tomomi; Newton, Linsey; Burkhardt, Alyssa; Mason, Saundra; Farré, Eva M.
2014-01-01
In Arabidopsis, the circadian clock regulates UV-B-mediated changes in gene expression. Here it is shown that circadian clock components are able to inhibit UV-B-induced gene expression in a gene-by-gene-specific manner and act downstream of the initial UV-B sensing by COP1 (CONSTITUTIVE PHOTOMORPHOGENIC 1) and UVR8 (UV RESISTANCE LOCUS 8). For example, the UV-B induction of ELIP1 (EARLY LIGHT INDUCIBLE PROTEIN 1) and PRR9 (PSEUDO-RESPONSE REGULATOR 9) is directly regulated by LUX (LUX ARRYTHMO), ELF4 (EARLY FLOWERING 4), and ELF3. Moreover, time-dependent changes in plant sensitivity to UV-B damage were observed. Wild-type Arabidopsis plants, but not circadian clock mutants, were more sensitive to UV-B treatment during the night periods than during the light periods under diel cycles. Experiments performed under short cycles of 6h light and 6h darkness showed that the increased stress sensitivity of plants to UV-B in the dark only occurred during the subjective night and not during the subjective day in wild-type seedlings. In contrast, the stress sensitivity of Arabidopsis mutants with a compromised circadian clock was still influenced by the light condition during the subjective day. Taken together, the results show that the clock and light modulate plant sensitivity to UV-B stress at different times of the day. PMID:25147271
Buonanno, Manuela; Randers-Pehrson, Gerhard; Bigelow, Alan W; Trivedi, Sheetal; Lowy, Franklin D; Spotnitz, Henry M; Hammer, Scott M; Brenner, David J
2013-01-01
0.5% to 10% of clean surgeries result in surgical-site infections, and attempts to reduce this rate have had limited success. Germicidal UV lamps, with a broad wavelength spectrum from 200 to 400 nm are an effective bactericidal option against drug-resistant and drug-sensitive bacteria, but represent a health hazard to patient and staff. By contrast, because of its limited penetration, ~200 nm far-UVC light is predicted to be effective in killing bacteria, but without the human health hazards to skin and eyes associated with conventional germicidal UV exposure. The aim of this work was to test the biophysically-based hypothesis that ~200 nm UV light is significantly cytotoxic to bacteria, but minimally cytotoxic or mutagenic to human cells either isolated or within tissues. A Kr-Br excimer lamp was used, which produces 207-nm UV light, with a filter to remove higher-wavelength components. Comparisons were made with results from a conventional broad spectrum 254-nm UV germicidal lamp. First, cell inactivation vs. UV fluence data were generated for methicillin-resistant S. aureus (MRSA) bacteria and also for normal human fibroblasts. Second, yields of the main UV-associated pre-mutagenic DNA lesions (cyclobutane pyrimidine dimers and 6-4 photoproducts) were measured, for both UV radiations incident on 3-D human skin tissue. We found that 207-nm UV light kills MRSA efficiently but, unlike conventional germicidal UV lamps, produces little cell killing in human cells. In a 3-D human skin model, 207-nm UV light produced almost no pre-mutagenic UV-associated DNA lesions, in contrast to significant yields induced by a conventional germicidal UV lamp. As predicted based on biophysical considerations, 207-nm light kills bacteria efficiently but does not appear to be significantly cytotoxic or mutagenic to human cells. Used appropriately, 207-nm light may have the potential for safely and inexpensively reducing surgical-site infection rates, including those of drug-resistant origin.
A Hybrid FPGA-Based System for EEG- and EMG-Based Online Movement Prediction.
Wöhrle, Hendrik; Tabie, Marc; Kim, Su Kyoung; Kirchner, Frank; Kirchner, Elsa Andrea
2017-07-03
A current trend in the development of assistive devices for rehabilitation, for example exoskeletons or active orthoses, is to utilize physiological data to enhance their functionality and usability, for example by predicting the patient's upcoming movements using electroencephalography (EEG) or electromyography (EMG). However, these modalities have different temporal properties and classification accuracies, which results in specific advantages and disadvantages. To use physiological data analysis in rehabilitation devices, the processing should be performed in real-time, guarantee close to natural movement onset support, provide high mobility, and should be performed by miniaturized systems that can be embedded into the rehabilitation device. We present a novel Field Programmable Gate Array (FPGA) -based system for real-time movement prediction using physiological data. Its parallel processing capabilities allows the combination of movement predictions based on EEG and EMG and additionally a P300 detection, which is likely evoked by instructions of the therapist. The system is evaluated in an offline and an online study with twelve healthy subjects in total. We show that it provides a high computational performance and significantly lower power consumption in comparison to a standard PC. Furthermore, despite the usage of fixed-point computations, the proposed system achieves a classification accuracy similar to systems with double precision floating-point precision.
NASA Astrophysics Data System (ADS)
Chakrabartty, Shantanu; Feng, Tao; Aono, Kenji
2013-04-01
A key challenge in structural health monitoring (SHM) sensors embedded inside civil structures is that elec- tronics need to operate continuously such that mechanical events of interest can be detected and appropriately analyzed. Continuous operation however requires a continuous source of energy which cannot be guaranteed using conventional energy scavenging techniques. The paper describes a hybrid energy scavenging SHM sensor which experiences zero down-time in monitoring mechanical events of interest. At the core of the proposed sensor is an analog floating-gate storage technology that can be precisely programmed at nano-watt and pico- watt power levels. This facilitates self-powered, non-volatile data logging of the mechanical events of interest by scavenging energy directly from the mechanical events itself. Remote retrieval of the stored data is achieved using a commercial off-the-shelf Gen-2 radio-frequency identification (RFID) reader which periodically reads an electronic product code (EPC) that encapsulates the sensor data. The Gen-2 interface also facilitates in simultaneous remote access to multiple sensors and also facilitates in determining the range and orientation of the sensor. The architecture of the sensor is based on a token-ring topology which enables sensor channels to be dynamically added or deleted through software control.
A Hybrid FPGA-Based System for EEG- and EMG-Based Online Movement Prediction
Wöhrle, Hendrik; Tabie, Marc; Kim, Su Kyoung; Kirchner, Frank; Kirchner, Elsa Andrea
2017-01-01
A current trend in the development of assistive devices for rehabilitation, for example exoskeletons or active orthoses, is to utilize physiological data to enhance their functionality and usability, for example by predicting the patient’s upcoming movements using electroencephalography (EEG) or electromyography (EMG). However, these modalities have different temporal properties and classification accuracies, which results in specific advantages and disadvantages. To use physiological data analysis in rehabilitation devices, the processing should be performed in real-time, guarantee close to natural movement onset support, provide high mobility, and should be performed by miniaturized systems that can be embedded into the rehabilitation device. We present a novel Field Programmable Gate Array (FPGA) -based system for real-time movement prediction using physiological data. Its parallel processing capabilities allows the combination of movement predictions based on EEG and EMG and additionally a P300 detection, which is likely evoked by instructions of the therapist. The system is evaluated in an offline and an online study with twelve healthy subjects in total. We show that it provides a high computational performance and significantly lower power consumption in comparison to a standard PC. Furthermore, despite the usage of fixed-point computations, the proposed system achieves a classification accuracy similar to systems with double precision floating-point precision. PMID:28671632
Gating based on internal/external signals with dynamic correlation updates.
Wu, Huanmei; Zhao, Qingya; Berbeco, Ross I; Nishioka, Seiko; Shirato, Hiroki; Jiang, Steve B
2008-12-21
Precise localization of mobile tumor positions in real time is critical to the success of gated radiotherapy. Tumor positions are usually derived from either internal or external surrogates. Fluoroscopic gating based on internal surrogates, such as implanted fiducial markers, is accurate however requiring a large amount of imaging dose. Gating based on external surrogates, such as patient abdominal surface motion, is non-invasive however less accurate due to the uncertainty in the correlation between tumor location and external surrogates. To address these complications, we propose to investigate an approach based on hybrid gating with dynamic internal/external correlation updates. In this approach, the external signal is acquired at high frequency (such as 30 Hz) while the internal signal is sparsely acquired (such as 0.5 Hz or less). The internal signal is used to validate and update the internal/external correlation during treatment. Tumor positions are derived from the external signal based on the newly updated correlation. Two dynamic correlation updating algorithms are introduced. One is based on the motion amplitude and the other is based on the motion phase. Nine patients with synchronized internal/external motion signals are simulated retrospectively to evaluate the effectiveness of hybrid gating. The influences of different clinical conditions on hybrid gating, such as the size of gating windows, the optimal timing for internal signal acquisition and the acquisition frequency are investigated. The results demonstrate that dynamically updating the internal/external correlation in or around the gating window will reduce false positive with relatively diminished treatment efficiency. This improvement will benefit patients with mobile tumors, especially greater for early stage lung cancers, for which the tumors are less attached or freely floating in the lung.
Buonanno, Manuela; Stanislauskas, Milda; Ponnaiya, Brian; Bigelow, Alan W.; Randers-Pehrson, Gerhard; Xu, Yanping; Shuryak, Igor; Smilenov, Lubomir; Owens, David M.; Brenner, David J.
2016-01-01
Background UVC light generated by conventional germicidal lamps is a well-established anti-microbial modality, effective against both bacteria and viruses. However, it is a human health hazard, being both carcinogenic and cataractogenic. Earlier studies showed that single-wavelength far-UVC light (207 nm) generated by excimer lamps kills bacteria without apparent harm to human skin tissue in vitro. The biophysical explanation is that, due to its extremely short range in biological material, 207 nm UV light cannot penetrate the human stratum corneum (the outer dead-cell skin layer, thickness 5–20 μm) nor even the cytoplasm of individual human cells. By contrast, 207 nm UV light can penetrate bacteria and viruses because these cells are physically much smaller. Aims To test the biophysically-based hypothesis that 207 nm UV light is not cytotoxic to exposed mammalian skin in vivo. Methods Hairless mice were exposed to a bactericidal UV fluence of 157 mJ/cm2 delivered by a filtered Kr-Br excimer lamp producing monoenergetic 207-nm UV light, or delivered by a conventional 254-nm UV germicidal lamp. Sham irradiations constituted the negative control. Eight relevant cellular and molecular damage endpoints including epidermal hyperplasia, pre-mutagenic UV-associated DNA lesions, skin inflammation, and normal cell proliferation and differentiation were evaluated in mice dorsal skin harvested 48 h after UV exposure. Results While conventional germicidal UV (254 nm) exposure produced significant effects for all the studied skin damage endpoints, the same fluence of 207 nm UV light produced results that were not statistically distinguishable from the zero exposure controls. Conclusions As predicted by biophysical considerations and in agreement with earlier in vitro studies, 207-nm light does not appear to be significantly cytotoxic to mouse skin. These results suggest that excimer-based far-UVC light could potentially be used for its anti-microbial properties, but without the associated hazards to skin of conventional germicidal UV lamps. PMID:27275949
Taheri, Salman; Jalali, Fahimeh; Fattahi, Nazir; Jalili, Ronak; Bahrami, Gholamreza
2015-10-01
Dispersive liquid-liquid microextraction based on solidification of floating organic droplet was developed for the extraction of methadone and determination by high-performance liquid chromatography with UV detection. In this method, no microsyringe or fiber is required to support the organic microdrop due to the usage of an organic solvent with a low density and appropriate melting point. Furthermore, the extractant droplet can be collected easily by solidifying it at low temperature. 1-Undecanol and methanol were chosen as extraction and disperser solvents, respectively. Parameters that influence extraction efficiency, i.e. volumes of extracting and dispersing solvents, pH, and salt effect, were optimized by using response surface methodology. Under optimal conditions, enrichment factor for methadone was 134 and 160 in serum and urine samples, respectively. The limit of detection was 3.34 ng/mmL in serum and 1.67 ng/mL in urine samples. Compared with the traditional dispersive liquid-liquid microextraction, the proposed method obtained lower limit of detection. Moreover, the solidification of floating organic solvent facilitated the phase transfer. And most importantly, it avoided using high-density and toxic solvents of traditional dispersive liquid-liquid microextraction method. The proposed method was successfully applied to the determination of methadone in serum and urine samples of an addicted individual under methadone therapy. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Optical imaging through turbid media with a degenerate four-wave mixing correlation time gate
Sappey, Andrew D.
1998-04-14
Optical imaging through turbid media is demonstrated using a degenerate four-wave mixing correlation time gate. An apparatus and method for detecting ballistic and/or snake light while rejecting unwanted diffusive light for imaging structures within highly scattering media are described. Degenerate four-wave mixing (DFWM) of a doubled YAG laser in rhodamine 590 is used to provide an ultrafast correlation time gate to discriminate against light that has undergone multiple scattering and therefore has lost memory of the structures within the scattering medium. Images have been obtained of a test cross-hair pattern through highly turbid suspensions of whole milk in water that are opaque to the naked eye, which demonstrates the utility of DFWM for imaging through turbid media. Use of DFWM as an ultrafast time gate for the detection of ballistic and/or snake light in optical mammography is discussed.
Self-Adaptive System based on Field Programmable Gate Array for Extreme Temperature Electronics
NASA Technical Reports Server (NTRS)
Keymeulen, Didier; Zebulum, Ricardo; Rajeshuni, Ramesham; Stoica, Adrian; Katkoori, Srinivas; Graves, Sharon; Novak, Frank; Antill, Charles
2006-01-01
In this work, we report the implementation of a self-adaptive system using a field programmable gate array (FPGA) and data converters. The self-adaptive system can autonomously recover the lost functionality of a reconfigurable analog array (RAA) integrated circuit (IC) [3]. Both the RAA IC and the self-adaptive system are operating in extreme temperatures (from 120 C down to -180 C). The RAA IC consists of reconfigurable analog blocks interconnected by several switches and programmable by bias voltages. It implements filters/amplifiers with bandwidth up to 20 MHz. The self-adaptive system controls the RAA IC and is realized on Commercial-Off-The-Shelf (COTS) parts. It implements a basic compensation algorithm that corrects a RAA IC in less than a few milliseconds. Experimental results for the cold temperature environment (down to -180 C) demonstrate the feasibility of this approach.
NASA Astrophysics Data System (ADS)
Wang, Yonggang; Kuang, Jie; Liu, Chong; Cao, Qiang; Li, Deng
2017-03-01
A high performance multi-channel time-to-digital converter (TDC) is implemented in a Xilinx Zynq-7000 field programmable gate array (FPGA). It can be flexibly configured as either 32 TDC channels with 9.9 ps time-interval RMS precision, 16 TDC channels with 6.9 ps RMS precision, or 8 TDC channels with 5.8 ps RMS precision. All TDCs have a 380 M Samples/second measurement throughput and a 2.63 ns measurement dead time. The performance consistency and temperature dependence of TDC channels are also evaluated. Because Zynq-7000 FPGA family integrates a feature-rich dual-core ARM based processing system and 28 nm Xilinx programmable logic in a single device, the realization of high performance TDCs on it will make the platform more widely used in time-measuring related applications.
Visible-light-induced instability in amorphous metal-oxide based TFTs for transparent electronics
NASA Astrophysics Data System (ADS)
Ha, Tae-Jun
2014-10-01
We investigate the origin of visible-light-induced instability in amorphous metal-oxide based thin film transistors (oxide-TFTs) for transparent electronics by exploring the shift in threshold voltage (Vth). A large hysteresis window in amorphous indium-gallium-zinc-oxide (a-IGZO) TFTs possessing large optical band-gap (≈3 eV) was observed in a visible-light illuminated condition whereas no hysteresis window was shown in a dark measuring condition. We also report the instability caused by photo irradiation and prolonged gate bias stress in oxide-TFTs. Larger Vth shift was observed after photo-induced stress combined with a negative gate bias than the sum of that after only illumination stress and only negative gate bias stress. Such results can be explained by trapped charges at the interface of semiconductor/dielectric and/or in the gate dielectric which play a role in a screen effect on the electric field applied by gate voltage, for which we propose that the localized-states-assisted transitions by visible-light absorption can be responsible.
Research on the calibration of ultraviolet energy meters
NASA Astrophysics Data System (ADS)
Lin, Fangsheng; Yin, Dejin; Li, Tiecheng; Lai, Lei; Xia, Ming
2016-10-01
Ultraviolet (UV) radiation is a kind of non-lighting radiation with the wavelength range from 100nm to 400nm. Ultraviolet irradiance meters are now widely used in many areas. However, as the development of science and technology, especially in the field of light-curing industry, there are more and more UV energy meters or UV-integrators need to be measured. Because the structure, wavelength band and measured power intensity of UV energy meters are different from traditional UV irradiance meters, it is important for us to take research on the calibration. With reference to JJG879-2002, we SIMT have independently developed the UV energy calibration device and the standard of operation and experimental methods for UV energy calibration in detail. In the calibration process of UV energy meter, many influencing factors will affect the final results, including different UVA-band UV light sources, different spectral response for different brands of UV energy meters, instability and no uniformity of UV light source and temperature. Therefore we need to take all of these factors into consideration to improve accuracy in UV energy calibration.
Germicidal Efficacy and Mammalian Skin Safety of 222-nm UV Light
Buonanno, Manuela; Ponnaiya, Brian; Welch, David; Stanislauskas, Milda; Randers-Pehrson, Gerhard; Smilenov, Lubomir; Lowy, Franklin D.; Owens, David M.; Brenner, David J.
2017-01-01
We have previously shown that 207-nm ultraviolet (UV) light has similar antimicrobial properties as typical germicidal UV light (254 nm), but without inducing mammalian skin damage. The biophysical rationale is based on the limited penetration distance of 207-nm light in biological samples (e.g. stratum corneum) compared with that of 254-nm light. Here we extended our previous studies to 222-nm light and tested the hypothesis that there exists a narrow wavelength window in the far-UVC region, from around 200–222 nm, which is significantly harmful to bacteria, but without damaging cells in tissues. We used a krypton-chlorine (Kr-Cl) excimer lamp that produces 222-nm UV light with a bandpass filter to remove the lower- and higher-wavelength components. Relative to respective controls, we measured: 1. in vitro killing of methicillin-resistant Staphylococcus aureus (MRSA) as a function of UV fluence; 2. yields of the main UV-associated premutagenic DNA lesions (cyclobutane pyrimidine dimers and 6-4 photoproducts) in a 3D human skin tissue model in vitro; 3. eight cellular and molecular skin damage endpoints in exposed hairless mice in vivo. Comparisons were made with results from a conventional 254-nm UV germicidal lamp used as positive control. We found that 222-nm light kills MRSA efficiently but, unlike conventional germicidal UV lamps (254 nm), it produces almost no premutagenic UV-associated DNA lesions in a 3D human skin model and it is not cytotoxic to exposed mammalian skin. As predicted by biophysical considerations and in agreement with our previous findings, far-UVC light in the range of 200–222 nm kills bacteria efficiently regardless of their drug-resistant proficiency, but without the skin damaging effects associated with conventional germicidal UV exposure. PMID:28225654
Germicidal Efficacy and Mammalian Skin Safety of 222-nm UV Light.
Buonanno, Manuela; Ponnaiya, Brian; Welch, David; Stanislauskas, Milda; Randers-Pehrson, Gerhard; Smilenov, Lubomir; Lowy, Franklin D; Owens, David M; Brenner, David J
2017-04-01
We have previously shown that 207-nm ultraviolet (UV) light has similar antimicrobial properties as typical germicidal UV light (254 nm), but without inducing mammalian skin damage. The biophysical rationale is based on the limited penetration distance of 207-nm light in biological samples (e.g. stratum corneum) compared with that of 254-nm light. Here we extended our previous studies to 222-nm light and tested the hypothesis that there exists a narrow wavelength window in the far-UVC region, from around 200-222 nm, which is significantly harmful to bacteria, but without damaging cells in tissues. We used a krypton-chlorine (Kr-Cl) excimer lamp that produces 222-nm UV light with a bandpass filter to remove the lower- and higher-wavelength components. Relative to respective controls, we measured: 1. in vitro killing of methicillin-resistant Staphylococcus aureus (MRSA) as a function of UV fluence; 2. yields of the main UV-associated premutagenic DNA lesions (cyclobutane pyrimidine dimers and 6-4 photoproducts) in a 3D human skin tissue model in vitro; 3. eight cellular and molecular skin damage endpoints in exposed hairless mice in vivo. Comparisons were made with results from a conventional 254-nm UV germicidal lamp used as positive control. We found that 222-nm light kills MRSA efficiently but, unlike conventional germicidal UV lamps (254 nm), it produces almost no premutagenic UV-associated DNA lesions in a 3D human skin model and it is not cytotoxic to exposed mammalian skin. As predicted by biophysical considerations and in agreement with our previous findings, far-UVC light in the range of 200-222 nm kills bacteria efficiently regardless of their drug-resistant proficiency, but without the skin damaging effects associated with conventional germicidal UV exposure.
Brelsford, Craig C; Morales, Luis O; Nezval, Jakub; Kotilainen, Titta K; Hartikainen, Saara M; Aphalo, Pedro J; Robson, T Matthew
2018-04-28
We studied how plants acclimated to growing conditions that included combinations of blue light and ultraviolet-A (UV-A) radiation, and whether their growing environment affected their photosynthetic capacity during and after a brief period of acute high light (as might happen during an under-canopy sunfleck). Arabidopsis thaliana Landsberg erecta wild-type were compared with mutants lacking functional blue-light-and-UV photoreceptors: phototropin 1PHOT1, cryptochromes (CRY1 and CRY2) and UV RESISTANT LOCUS 8 (uvr8). This was achieved using LED lamps in a controlled environment to create treatments with or without blue light, in a split-plot design with or without UV-A radiation. We compared the accumulation of phenolic compounds under growth conditions and after exposure to 30 minutes of high light at the end of the experiment (46 days), and likewise measured the operational efficiency of photosystem II (φPSII a proxy for photosynthetic performance) and dark-adapted maximum quantum yield (F v /F m to assess PSII damage). Our results indicate that cryptochromes are the main photoreceptors regulating phenolic-compound accumulation in response to blue light and UV-A radiation, and a lack of functional cryptochromes impairs photosynthetic performance under high light. Our findings also reveal a role for UVR8 in accumulating flavonoids in response to a low UV-A dose. Interestingly, phototropin 1 partially-mediated constitutive accumulation of phenolic compounds in the absence of blue light. Low irradiance blue light and UV-A did not improve φPSII and F v /F m upon our acute high light treatment, however CRYs played an important role in ameliorating high-light stress. This article is protected by copyright. All rights reserved.
Liu, Xiaoxia; Tian, Miaomiao; Camara, Mohamed Amara; Guo, Liping; Yang, Li
2015-10-01
We present sequential CE analysis of amino acids and L-asparaginase-catalyzed enzyme reaction, by combing the on-line derivatization, optically gated (OG) injection and commercial-available UV-Vis detection. Various experimental conditions for sequential OG-UV/vis CE analysis were investigated and optimized by analyzing a standard mixture of amino acids. High reproducibility of the sequential CE analysis was demonstrated with RSD values (n = 20) of 2.23, 2.57, and 0.70% for peak heights, peak areas, and migration times, respectively, and the LOD of 5.0 μM (for asparagine) and 2.0 μM (for aspartic acid) were obtained. With the application of the OG-UV/vis CE analysis, sequential online CE enzyme assay of L-asparaginase-catalyzed enzyme reaction was carried out by automatically and continuously monitoring the substrate consumption and the product formation every 12 s from the beginning to the end of the reaction. The Michaelis constants for the reaction were obtained and were found to be in good agreement with the results of traditional off-line enzyme assays. The study demonstrated the feasibility and reliability of integrating the OG injection with UV/vis detection for sequential online CE analysis, which could be of potential value for online monitoring various chemical reaction and bioprocesses. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
PROGRAPE-1: A Programmable, Multi-Purpose Computer for Many-Body Simulations
NASA Astrophysics Data System (ADS)
Hamada, Tsuyoshi; Fukushige, Toshiyuki; Kawai, Atsushi; Makino, Junichiro
2000-10-01
We have developed PROGRAPE-1 (PROgrammable GRAPE-1), a programmable multi-purpose computer for many-body simulations. The main difference between PROGRAPE-1 and ``traditional'' GRAPE systems is that the former uses FPGA (Field Programmable Gate Array) chips as the processing elements, while the latter relies on a hardwired pipeline processor specialized to gravitational interactions. Since the logic implemented in FPGA chips can be reconfigured, we can use PROGRAPE-1 to calculate not only gravitational interactions, but also other forms of interactions, such as the van der Waals force, hydro\\-dynamical interactions in the SPHr calculation, and so on. PROGRAPE-1 comprises two Altera EPF10K100 FPGA chips, each of which contains nominally 100000 gates. To evaluate the programmability and performance of PROGRAPE-1, we implemented a pipeline for gravitational interactions similar to that of GRAPE-3. One pipeline is fitted into a single FPGA chip, operated at 16 MHz clock. Thus, for gravitational interactions, PROGRAPE-1 provided a speed of 0.96 Gflops-equivalent. PROGRAPE will prove to be useful for a wide-range of particle-based simulations in which the calculation cost of interactions other than gravity is high, such as the evaluation of SPH interactions.
Bruce G. Marcot; M. Torre Jorgenson; Anthony R. DeGange
2014-01-01
During July 16â18, 2013, low-level photography flights were conducted (with a Cessna 185 with floats and a Cessna 206 with tundra tires) over the five administrative units of the National Park Service Arctic Network (Bering Land Bridge National Preserve, Cape Krusenstern National Monument, Gates of the Arctic National Park and Preserve, Kobuk Valley National Park, and...
Footprints of the sun: memory of UV and light stress in plants
Müller-Xing, Ralf; Xing, Qian; Goodrich, Justin
2014-01-01
Sunlight provides the necessary energy for plant growth via photosynthesis but high light and particular its integral ultraviolet (UV) part causes stress potentially leading to serious damage to DNA, proteins, and other cellular components. Plants show adaptation to environmental stresses, sometimes referred to as “plant memory.” There is growing evidence that plants memorize exposure to biotic or abiotic stresses through epigenetic mechanisms at the cellular level. UV target genes such as CHALCONE SYNTHASE (CHS) respond immediately to UV treatment and studies of the recently identified UV-B receptor UV RESISTANCE LOCUS 8 (UVR8) confirm the expedite nature of UV signaling. Considering these findings, an UV memory seems redundant. However, several lines of evidence suggest that plants may develop an epigenetic memory of UV and light stress, but in comparison to other abiotic stresses there has been relatively little investigation. Here we summarize the state of knowledge about acclimation and adaptation of plants to UV light and discuss the possibility of chromatin based epigenetic memory. PMID:25278950
A randomization approach to handling data scaling in nuclear medicine.
Bai, Chuanyong; Conwell, Richard; Kindem, Joel
2010-06-01
In medical imaging, data scaling is sometimes desired to handle the system complexity, such as uniformity calibration. Since the data are usually saved in short integer, conventional data scaling will first scale the data in floating point format and then truncate or round the floating point data to short integer data. For example, when using truncation, scaling of 9 by 1.1 results in 9 and scaling of 10 by 1.1 results in 11. When the count level is low, such scaling may change the local data distribution and affect the intended application of the data. In this work, the authors use an example gated cardiac SPECT study to illustrate the effect of conventional scaling by factors of 1.1 and 1.2. The authors then scaled the data with the same scaling factors using a randomization approach, in which a random number evenly distributed between 0 and 1 is generated to determine how the floating point data will be saved as short integer data. If the random number is between 0 and 0.9, then 9.9 will be saved as 10, otherwise 9. In other words, the floating point value 9.9 will be saved in short integer value as 10 with 90% probability or 9 with 10% probability. For statistical analysis of the performance, the authors applied the conventional approach with rounding and the randomization approach to 50 consecutive gated studies from a clinical site. For the example study, the image reconstructed from the original data showed an apparent perfusion defect at the apex of the myocardium. The defect size was noticeably changed by scaling with 1.1 and 1.2 using the conventional approaches with truncation and rounding. Using the randomization approach, in contrast, the images from the scaled data appeared identical to the original image. Line profile analysis of the scaled data showed that the randomization approach introduced the least change to the data as compared to the conventional approaches. For the 50 gated data sets, significantly more studies showed quantitative differences between the original images and the images from the data scaled by 1.2 using the rounding approach than the randomization approach [46/50 (92%) versus 3/50 (6%), p < 0.05]. Likewise, significantly more studies showed visually noticeable differences between the original images and the images from the data scaled by 1.2 using the rounding approach than randomization [29/50 (58%) versus 1/50 (2%), p < 0.05]. In conclusion, the proposed randomization approach minimizes the scaling-introduced local data change as compared to the conventional approaches. It is preferred for nuclear medicine data scaling.
Długosz, Maciej; Żmudzki, Paweł; Kwiecień, Anna; Szczubiałka, Krzysztof; Krzek, Jan; Nowakowska, Maria
2015-11-15
Photocatalytic degradation of an antibiotic, sulfamethoxazole (SMX), in aqueous solution using a novel floating TiO2-expanded perlite photocatalyst (EP-TiO2-773) and radiation from the near UV spectral range was studied. The process is important considering that SMX is known to be a widespread and highly persistent pollutant of water resources. SMX degradation was described using a pseudo-first-order kinetic equation according to the Langmuir-Hinshelwood model. The products of the SMX photocatalytic degradation were identified. The effect of pH on the kinetics and mechanism of SMX photocatalytic degradation was explained. Copyright © 2015 Elsevier B.V. All rights reserved.
A 360-degree floating 3D display based on light field regeneration.
Xia, Xinxing; Liu, Xu; Li, Haifeng; Zheng, Zhenrong; Wang, Han; Peng, Yifan; Shen, Weidong
2013-05-06
Using light field reconstruction technique, we can display a floating 3D scene in the air, which is 360-degree surrounding viewable with correct occlusion effect. A high-frame-rate color projector and flat light field scanning screen are used in the system to create the light field of real 3D scene in the air above the spinning screen. The principle and display performance of this approach are investigated in this paper. The image synthesis method for all the surrounding viewpoints is analyzed, and the 3D spatial resolution and angular resolution of the common display zone are employed to evaluate display performance. The prototype is achieved and the real 3D color animation image has been presented vividly. The experimental results verified the representability of this method.
Extending the BEAGLE library to a multi-FPGA platform.
Jin, Zheming; Bakos, Jason D
2013-01-19
Maximum Likelihood (ML)-based phylogenetic inference using Felsenstein's pruning algorithm is a standard method for estimating the evolutionary relationships amongst a set of species based on DNA sequence data, and is used in popular applications such as RAxML, PHYLIP, GARLI, BEAST, and MrBayes. The Phylogenetic Likelihood Function (PLF) and its associated scaling and normalization steps comprise the computational kernel for these tools. These computations are data intensive but contain fine grain parallelism that can be exploited by coprocessor architectures such as FPGAs and GPUs. A general purpose API called BEAGLE has recently been developed that includes optimized implementations of Felsenstein's pruning algorithm for various data parallel architectures. In this paper, we extend the BEAGLE API to a multiple Field Programmable Gate Array (FPGA)-based platform called the Convey HC-1. The core calculation of our implementation, which includes both the phylogenetic likelihood function (PLF) and the tree likelihood calculation, has an arithmetic intensity of 130 floating-point operations per 64 bytes of I/O, or 2.03 ops/byte. Its performance can thus be calculated as a function of the host platform's peak memory bandwidth and the implementation's memory efficiency, as 2.03 × peak bandwidth × memory efficiency. Our FPGA-based platform has a peak bandwidth of 76.8 GB/s and our implementation achieves a memory efficiency of approximately 50%, which gives an average throughput of 78 Gflops. This represents a ~40X speedup when compared with BEAGLE's CPU implementation on a dual Xeon 5520 and 3X speedup versus BEAGLE's GPU implementation on a Tesla T10 GPU for very large data sizes. The power consumption is 92 W, yielding a power efficiency of 1.7 Gflops per Watt. The use of data parallel architectures to achieve high performance for likelihood-based phylogenetic inference requires high memory bandwidth and a design methodology that emphasizes high memory efficiency. To achieve this objective, we integrated 32 pipelined processing elements (PEs) across four FPGAs. For the design of each PE, we developed a specialized synthesis tool to generate a floating-point pipeline with resource and throughput constraints to match the target platform. We have found that using low-latency floating-point operators can significantly reduce FPGA area and still meet timing requirement on the target platform. We found that this design methodology can achieve performance that exceeds that of a GPU-based coprocessor.
Universal holonomic single quantum gates over a geometric spin with phase-modulated polarized light.
Ishida, Naoki; Nakamura, Takaaki; Tanaka, Touta; Mishima, Shota; Kano, Hiroki; Kuroiwa, Ryota; Sekiguchi, Yuhei; Kosaka, Hideo
2018-05-15
We demonstrate universal non-adiabatic non-abelian holonomic single quantum gates over a geometric electron spin with phase-modulated polarized light and 93% average fidelity. This allows purely geometric rotation around an arbitrary axis by any angle defined by light polarization and phase using a degenerate three-level Λ-type system in a negatively charged nitrogen-vacancy center in diamond. Since the control light is completely resonant to the ancillary excited state, the demonstrated holonomic gate not only is fast with low power, but also is precise without the dynamical phase being subject to control error and environmental noise. It thus allows pulse shaping for further fidelity.
NASA Astrophysics Data System (ADS)
Abdolmohammadi, Hamid Reza; Khalaf, Abdul Jalil M.; Panahi, Shirin; Rajagopal, Karthikeyan; Pham, Viet-Thanh; Jafari, Sajad
2018-06-01
Nowadays, designing chaotic systems with hidden attractor is one of the most interesting topics in nonlinear dynamics and chaos. In this paper, a new 4D chaotic system is proposed. This new chaotic system has no equilibria, and so it belongs to the category of systems with hidden attractors. Dynamical features of this system are investigated with the help of its state-space portraits, bifurcation diagram, Lyapunov exponents diagram, and basin of attraction. Also a hardware realisation of this system is proposed by using field programmable gate arrays (FPGA). In addition, an electronic circuit design for the chaotic system is introduced.
Modifications of traps to reduce bycatch of freshwater turtles
Bury, R. Bruce
2011-01-01
Mortality of freshwater turtles varies among types and deployments of traps. There are few or no losses in hoop or fyke traps set where turtles may reach air, including placement in shallows, addition of floats on traps, and tying traps securely to a stake or to shore. Turtle mortality occurs when traps are set deep, traps are checked at intervals >1 day, and when turtles are captured as bycatch. Devices are available that exclude turtles from traps set for crab or game fish harvest. Slotted gates in front of the trap mouth reduce turtle entry, but small individuals still may be trapped. Incidental take of turtles is preventable by integrating several designs into aquatic traps, such as adding floats to the top of traps so turtles may reach air or an extension tube (chimney, ramp) that creates an escape route.
Shen, Jing; Liang, Qingfeng; Su, Guanyu; Zhang, Yang; Wang, Zhiqun; Liang, Hong; Baudouin, Christophe; Labbé, Antoine
2017-01-01
In order to study Staphylococcus epidermis and Staphylococcus aureus in vitro viability after the exposure to ultraviolet (UV) light and riboflavin, twelve strains of Staphylococcus epidermis and twelve strains of Staphylococcus aureus were isolated from patients with bacterial keratitis. The growth situation of Staphylococcus epidermidis and Staphylococcus aureus under different experimental conditions was qualitatively observed. The number of colonies surviving bacteria was counted under different UV light power and different exposure time. The experiment showed that there was no inhibition effect on the growth of bacteria using riboflavin alone. In UV alone group and UV-riboflavin group, inhibition effect on the bacteria growth was found. The UV-riboflavin combination had better inhibition effect on bacteria than UV irradiation alone. The amount of bacteria in the UV-riboflavin group was decreased by 99.1%~99.5% and 54.8%~64.6% in the UV alone group, when the UV light power was 10.052 mW/cm 2 and the irradiation time was 30 min. Moreover, with the increase of the UV power or irradiation time, the survival rates of bacteria were rapidly reduced. Compared with Staphylococcus aureus , Staphylococcus epidermis was more easily to be killed under the action of UV light combined with riboflavin.
Walch, Gregor; Rotter, Bernhard; Brunauer, Georg Christoph; Esmaeili, Esmaeil; Opitz, Alexander Karl; Kubicek, Markus; Summhammer, Johann; Ponweiser, Karl
2017-01-01
A single crystalline SrTiO3 working electrode in a zirconia-based solid oxide electrochemical cell is illuminated by UV light at temperatures of 360–460 °C. In addition to photovoltaic effects, this leads to the build-up of a battery-type voltage up to more than 300 mV. After switching off UV light, this voltage only slowly decays. It is caused by UV-induced oxygen incorporation into the mixed conducting working electrode and thus by changes of the oxygen stoichiometry δ in SrTiO3–δ under UV illumination. These changes of the oxygen content could be followed in time-dependent voltage measurements and also manifest themselves in time-dependent resistance changes during and after UV illumination. Discharge currents measured after UV illumination reveal that a large fraction of the existing oxygen vacancies in SrTiO3 become filled under UV light. Additional measurements on cells with TiO2 thin film electrodes show the broader applicability of this novel approach for transforming light into chemical energy and thus the feasibility of solid oxide photoelectrochemical cells (SOPECs) in general and of a “light-charged oxygen battery” in particular. PMID:28261480
NASA Technical Reports Server (NTRS)
Howard, J. W.; Kim, H.; Berg, M.; LaBel, K. A.; Stansberry, S.; Friendlich, M.; Irwin, T.
2006-01-01
A viewgraph presentation on the development of a low cost, high speed tester reconfigurable Field Programmable Gata Array (FPGA) is shown. The topics include: 1) Introduction; 2) Objectives; 3) Tester Descriptions; 4) Tester Validations and Demonstrations; 5) Future Work; and 6) Summary.
NASA Astrophysics Data System (ADS)
Yang, Xusan; Tang, Yuanhe; Liu, Kai; Liu, Hanchen; Gao, Haiyang; Li, Qing; Zhang, Ruixia; Ye, Na; Liang, Yuan; Zhao, Gaoxiang
2008-12-01
Based on the electro-optical properties of liquid crystal, we have designed a novel partial gating detector. Liquid crystal can be taken to change its own transmission according to the light intensity outside. Every single pixel of the image is real-time modulated by liquid crystal, thus the strong light is weakened and low light goes through the detector normally .The purpose of partial-gating strong light (>105lx) can be achieved by this detector. The modulation transfer function (MTF) equations of the main optical sub-systems are calculated in this paper, they are liquid crystal panels, linear fiber panel and CCD array detector. According to the relevant size, the MTF value of this system is fitted out. The result is MTF= 0.518 at Nyquist frequency.
Synthesis of Core-shell Lanthanide-doped Upconversion Nanocrystals for Cellular Applications.
Ai, Xiangzhao; Lyu, Linna; Mu, Jing; Hu, Ming; Wang, Zhimin; Xing, Bengang
2017-11-10
Lanthanide-doped upconversion nanocrystals (UCNs) have attracted much attention in recent years based on their promising and controllable optical properties, which allow for the absorption of near-infrared (NIR) light and can subsequently convert it into multiplexed emissions that span over a broad range of regions from the UV to the visible to the NIR. This article presents detailed experimental procedures for high-temperature co-precipitation synthesis of core-shell UCNs that incorporate different lanthanide ions into nanocrystals for efficiently converting deep-tissue penetrable NIR excitation (808 nm) into a strong blue emission at 480 nm. By controlling the surface modification with biocompatible polymer (polyacrylic acid, PAA), the as-prepared UCNs acquires great solubility in buffer solutions. The hydrophilic nanocrystals are further functionalized with specific ligands (dibenzyl cyclooctyne, DBCO) for localization on the cell membrane. Upon NIR light (808 nm) irradiation, the upconverted blue emission can effectively activate the light-gated channel protein on the cell membrane and specifically regulate the cation (e.g., Ca 2+ ) influx in the cytoplasm. This protocol provides a feasible methodology for the synthesis of core-shell lanthanide-doped UCNs and subsequent biocompatible surface modification for further cellular applications.
Responses of Crepis japonica induced by supplemental blue light and UV-A radiation.
Constantino, L F da S; Nascimento, L B Dos S; Casanova, L M; Moreira, N Dos S; Menezes, E A; Esteves, R L; Costa, S S; Tavares, E S
2017-02-15
Crepis japonica (L.) D.C. (Asteraceae), a weed with antioxidant, antiallergenic, antiviral and antitumor properties displays both medicinal properties and nutritional value. This study aims to assess the effects of a supplementation of blue light and UV-A radiation on the growth, leaf anatomical structure and phenolic profile of the aerial parts of Crepis japonica. Plants were grown under two light treatments: W (control - white light), W + B (white light supplemented with blue light) and W + UV-A (white light supplemented with UV-A radiation). We recorded the length, width, and weight of fresh and dry leaves, the thickness of the epidermis and mesophyll, and stomata density. The phenolic profiles of the aqueous extracts of the aerial parts were analyzed by HPLC-DAD. There was an increase in the leaf size, stomatal density, and phenolic production, and a thickening of the mesophyll and epidermis. UV-A radiation increased the phenolic production more than blue light. Blue light and UV-A radiation both improved the production of caffeic acid by about 6 and 3 times, respectively, in comparison to control. This compound was first reported as a constituent of the extract from the aerial parts together with caftaric acid. UV-A also promoted the production of chlorogenic acid (about 1.5 times in comparison to the control). We observed that the morphological and chemical parameters of C. japonica are modified in response to blue light and UV-A radiation, which can be used as tools in the cultivation of this species in order to improve its medicinal properties and nutritional value.
Buonanno, Manuela; Randers-Pehrson, Gerhard; Bigelow, Alan W.; Trivedi, Sheetal; Lowy, Franklin D.; Spotnitz, Henry M.; Hammer, Scott M.; Brenner, David J.
2013-01-01
Background 0.5% to 10% of clean surgeries result in surgical-site infections, and attempts to reduce this rate have had limited success. Germicidal UV lamps, with a broad wavelength spectrum from 200 to 400 nm are an effective bactericidal option against drug-resistant and drug-sensitive bacteria, but represent a health hazard to patient and staff. By contrast, because of its limited penetration, ∼200 nm far-UVC light is predicted to be effective in killing bacteria, but without the human health hazards to skin and eyes associated with conventional germicidal UV exposure. Aims The aim of this work was to test the biophysically-based hypothesis that ∼200 nm UV light is significantly cytotoxic to bacteria, but minimally cytotoxic or mutagenic to human cells either isolated or within tissues. Methods A Kr-Br excimer lamp was used, which produces 207-nm UV light, with a filter to remove higher-wavelength components. Comparisons were made with results from a conventional broad spectrum 254-nm UV germicidal lamp. First, cell inactivation vs. UV fluence data were generated for methicillin-resistant S. aureus (MRSA) bacteria and also for normal human fibroblasts. Second, yields of the main UV-associated pre-mutagenic DNA lesions (cyclobutane pyrimidine dimers and 6-4 photoproducts) were measured, for both UV radiations incident on 3-D human skin tissue. Results We found that 207-nm UV light kills MRSA efficiently but, unlike conventional germicidal UV lamps, produces little cell killing in human cells. In a 3-D human skin model, 207-nm UV light produced almost no pre-mutagenic UV-associated DNA lesions, in contrast to significant yields induced by a conventional germicidal UV lamp. Conclusions As predicted based on biophysical considerations, 207-nm light kills bacteria efficiently but does not appear to be significantly cytotoxic or mutagenic to human cells. Used appropriately, 207-nm light may have the potential for safely and inexpensively reducing surgical-site infection rates, including those of drug-resistant origin. PMID:24146947
The EGFR family of receptors sensitizes cancer cells towards UV light
NASA Astrophysics Data System (ADS)
Petersen, Steffen; Neves-Petersen, Maria Teresa; Olsen, Birgitte
2008-02-01
A combination of bioinformatics, biophysical, advanced laser studies and cell biology lead to the realization that laser-pulsed UV light stops cancer growth and induces apoptosis. We have previously shown that laser-pulsed UV (LP-UV) illumination of two different skin-derived cancer cell lines both over expressing the EGF receptor, lead to arrest of the EGFR signaling pathway. We have investigated the available sequence and experimental 3D structures available in the Protein Data Bank. The EGF receptor contains a Furin like cystein rich extracellular domain. The cystein content is highly unusual, 25 disulphide bridges supports the 621 amino acid extracellular protein domain scaffold (1mb6.pdb). In two cases a tryptophan is neighboring a cystein in the primary sequence, which in itself is a rare observation. Aromatic residues is observed to be spatially close to all observed 25 disulphide bridges. The EGF receptor is often overexpressed in cancers and other proliferative skin disorders, it might be possible to significantly reduce the proliferative potential of these cells making them good targets for laser-pulsed UV-light treatment. The discovery that UV light can be used to open disulphide bridges in proteins upon illumination of nearby aromatic amino acids was the first step that lead to the hypothesis that UV light could modulate the structure and therefore the function of these key receptor proteins. The observation that membrane receptors (EGFR) contained exactly the motifs that are sensitive to UV light lead to the prediction that UV light could modify these receptors permanently and stop cancer proliferation. We hereby show that the EGFR family of receptors has the necessary structural motifs that make this family of proteins highly sensitive to UV light.
Programmable, very low noise current source.
Scandurra, G; Cannatà, G; Giusi, G; Ciofi, C
2014-12-01
We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.
Programmable, very low noise current source
NASA Astrophysics Data System (ADS)
Scandurra, G.; Cannatà, G.; Giusi, G.; Ciofi, C.
2014-12-01
We propose a new approach for the realization of very low noise programmable current sources mainly intended for application in the field of low frequency noise measurements. The design is based on a low noise Junction Field Effect Transistor (JFET) acting as a high impedance current source and programmability is obtained by resorting to a low noise, programmable floating voltage source that allows to set the sourced current at the desired value. The floating voltage source is obtained by exploiting the properties of a standard photovoltaic MOSFET driver. Proper filtering and a control network employing super-capacitors allow to reduce the low frequency output noise to that due to the low noise JFET down to frequencies as low as 100 mHz while allowing, at the same time, to set the desired current by means of a standard DA converter with an accuracy better than 1%. A prototype of the system capable of supplying currents from a few hundreds of μA up to a few mA demonstrates the effectiveness of the approach we propose. When delivering a DC current of about 2 mA, the power spectral density of the current fluctuations at the output is found to be less than 25 pA/√Hz at 100 mHz and less than 6 pA/√Hz for f > 1 Hz, resulting in an RMS noise in the bandwidth from 0.1 to 10 Hz of less than 14 pA.
Review of mixer design for low voltage - low power applications
NASA Astrophysics Data System (ADS)
Nurulain, D.; Musa, F. A. S.; Isa, M. Mohamad; Ahmad, N.; Kasjoo, S. R.
2017-09-01
A mixer is used in almost all radio frequency (RF) or microwave systems for frequency translation. Nowadays, the increase market demand encouraged the industry to deliver circuit designs to create proficient and convenient equipment with very low power (LP) consumption and low voltage (LV) supply in both digital and analogue circuits. This paper focused on different Complementary Metal Oxide Semiconductor (CMOS) design topologies for LV and LP mixer design. Floating Gate Metal Oxide Semiconductor (FGMOS) is an alternative technology to replace CMOS due to their high ability for LV and LP applications. FGMOS only required a few transistors per gate and can have a shift in threshold voltage (VTH) to increase the LP and LV performances as compared to CMOS, which makes an attractive option to replace CMOS.
Investigation of High-k Dielectrics and Metal Gate Electrodes for Non-volatile Memory Applications
NASA Astrophysics Data System (ADS)
Jayanti, Srikant
Due to the increasing demand of non-volatile flash memories in the portable electronics, the device structures need to be scaled down drastically. However, the scalability of traditional floating gate structures beyond 20 nm NAND flash technology node is uncertain. In this regard, the use of metal gates and high-k dielectrics as the gate and interpoly dielectrics respectively, seem to be promising substitutes in order to continue the flash scaling beyond 20nm. Furthermore, research of novel memory structures to overcome the scaling challenges need to be explored. Through this work, the use of high-k dielectrics as IPDs in a memory structure has been studied. For this purpose, IPD process optimization and barrier engineering were explored to determine and improve the memory performance. Specifically, the concept of high-k / low-k barrier engineering was studied in corroboration with simulations. In addition, a novel memory structure comprising a continuous metal floating gate was investigated in combination with high-k blocking oxides. Integration of thin metal FGs and high-k dielectrics into a dual floating gate memory structure to result in both volatile and non-volatile modes of operation has been demonstrated, for plausible application in future unified memory architectures. The electrical characterization was performed on simple MIS/MIM and memory capacitors, fabricated through CMOS compatible processes. Various analytical characterization techniques were done to gain more insight into the material behavior of the layers in the device structure. In the first part of this study, interfacial engineering was investigated by exploring La2O3 as SiO2 scavenging layer. Through the silicate formation, the consumption of low-k SiO2 was controlled and resulted in a significant improvement in dielectric leakage. The performance improvement was also gauged through memory capacitors. In the second part of the study, a novel memory structure consisting of continuous metal FG in the form of PVD TaN was investigated along with high-k blocking dielectric. The material properties of TaN metal and high-k / low-k dielectric engineering were systematically studied. And the resulting memory structures exhibit excellent memory characteristics and scalability of the metal FG down to ˜1nm, which is promising in order to reduce the unwanted FG-FG interferences. In the later part of the study, the thermal stability of the combined stack was examined and various approaches to improve the stability and understand the cause of instability were explored. The performance of the high-k IPD metal FG memory structure was observed to degrade with higher annealing conditions and the deteriorated behavior was attributed to the leakage instability of the high-k /TaN capacitor. While the degradation is pronounced in both MIM and MIS capacitors, a higher leakage increment was seen in MIM, which was attributed to the higher degree of dielectric crystallization. In an attempt to improve the thermal stability, the trade-off in using amorphous interlayers to reduce the enhanced dielectric crystallization on metal was highlighted. Also, the effect of oxygen vacancies and grain growth on the dielectric leakage was studied through a multi-deposition-multi-anneal technique. Multi step deposition and annealing in a more electronegative ambient was observed to have a positive impact on the dielectric performance.
NASA Astrophysics Data System (ADS)
Lee, Pui Fai
2007-12-01
Nanocrystals (NC) embedded in dielectrics have attracted a great deal of attention recently because they can potentially be applied in nonvolatile, high-speed, high-density and low-power memory devices. This device benefits from a relatively low operating voltage, high endurance, fast write-erase speeds and better immunity to soft errors. The nanocrystal materials suitable for such an application can be either metals or semiconductors. Recent studies have shown that high-k dielectrics, instead of SiO2 , for the tunneling layer in nanocrystal floating gate memory can improve the trade-off between data retention and program efficiency due to the unique band alignment of high-k dielectrics in the programming and retention modes. In this project, HfAlO has been selected as the high- k dielectric for the nanocrystal floating gate memory structure. The trilayer structure (HfAlO/Ge-NC/HfAlO) on Si was fabricated by PLD. Results revealed that relatively low substrate temperature and growth rate are favourable for the formation of smaller-size Ge nanocrystals. Effects of size/density of the Ge nanocrystal, the tunneling and control oxide layer thicknesses and the oxygen partial pressure during their growth on the charge storage and charge retention characteristics have also been studied. The island structure of the Ge nanocrystal suggests that the growth is based on the Volmer-Webber mode. The self-organized Ge nanocrystals so formed were uniform in size (5--20 nm diameter) and distribution with a density approaching 1012--1013cm-2. Flat-band voltage shift (DeltaVFB) of about 3.6 V and good retention property have been achieved. By varying aggregation distance, sputtering gas pressure and ionization power of the nanocluster source, nanoclusters of Ge with different sizes can be formed. The memory effect of the trilayer structure so formed with 10 nm Ge nanoclusters are manifested by the counter-clockwise hysteresis loop in the C-V curves and a maximum flat-band voltage shift of 5.0 V has been achieved. For comparison purposes, metal nanocrystals have also been investigated by utilizing both of the physical deposition methods as mentioned above. Silver (Ag) nanocrystals with size of 10--40 nm have been embedded in HfAlO matrix in the trilayer capacitor structure and a flat-band voltage shift of 2.0 V has been achieved.
Donigan, Katherine A; Cerritelli, Susana M; McDonald, John P; Vaisman, Alexandra; Crouch, Robert J; Woodgate, Roger
2015-11-01
DNA polymerase η (pol η) is best characterized for its ability to perform accurate and efficient translesion DNA synthesis (TLS) through cyclobutane pyrimidine dimers (CPDs). To ensure accurate bypass the polymerase is not only required to select the correct base, but also discriminate between NTPs and dNTPs. Most DNA polymerases have a conserved "steric gate" residue which functions to prevent incorporation of NMPs during DNA synthesis. Here, we demonstrate that the Phe35 residue of Saccharomyces cerevisiae pol η functions as a steric gate to limit the use of ribonucleotides during polymerization both in vitro and in vivo. Unlike the related pol ι enzyme, wild-type pol η does not readily incorporate NMPs in vitro. In contrast, a pol η F35A mutant incorporates NMPs on both damaged and undamaged DNA in vitro with a high degree of base selectivity. An S.cerevisiae strain expressing pol η F35A (rad30-F35A) that is also deficient for nucleotide excision repair (rad1Δ) and the TLS polymerase, pol ζ (rev3Δ), is extremely sensitive to UV-light. The sensitivity is due, in part, to RNase H2 activity, as an isogenic rnh201Δ strain is roughly 50-fold more UV-resistant than its RNH201(+) counterpart. Interestingly the rad1Δ rev3Δ rad30-F35A rnh201Δ strain exhibits a significant increase in the extent of spontaneous mutagenesis with a spectrum dominated by 1bp deletions at runs of template Ts. We hypothesize that the increased mutagenesis is due to rA incorporation at these sites and that the short poly rA tract is subsequently repaired in an error-prone manner by a novel repair pathway that is specifically targeted to polyribonucleotide tracks. These data indicate that under certain conditions, pol η can compete with the cell's replicases and gain access to undamaged genomic DNA. Such observations are consistent with a role for pol η in replicating common fragile sites (CFS) in human cells. Published by Elsevier B.V.
InGaAs/InP SPAD photon-counting module with auto-calibrated gate-width generation and remote control
NASA Astrophysics Data System (ADS)
Tosi, Alberto; Ruggeri, Alessandro; Bahgat Shehata, Andrea; Della Frera, Adriano; Scarcella, Carmelo; Tisa, Simone; Giudice, Andrea
2013-01-01
We present a photon-counting module based on InGaAs/InP SPAD (Single-Photon Avalanche Diode) for detecting single photons up to 1.7 μm. The module exploits a novel architecture for generating and calibrating the gate width, along with other functions (such as module supervision, counting and processing of detected photons, etc.). The gate width, i.e. the time interval when the SPAD is ON, is user-programmable in the range from 500 ps to 1.5 μs, by means of two different delay generation methods implemented with an FPGA (Field-Programmable Gate Array). In order to compensate chip-to-chip delay variation, an auto-calibration circuit picks out a combination of delays in order to match at best the selected gate width. The InGaAs/InP module accepts asynchronous and aperiodic signals and introduces very low timing jitter. Moreover the photon counting module provides other new features like a microprocessor for system supervision, a touch-screen for local user interface, and an Ethernet link for smart remote control. Thanks to the fullyprogrammable and configurable architecture, the overall instrument provides high system flexibility and can easily match all requirements set by many different applications requiring single photon-level sensitivity in the near infrared with very low photon timing jitter.
Replication of adeno-associated virus in cells irradiated with UV light at 254 nm
DOE Office of Scientific and Technical Information (OSTI.GOV)
Yakobson, B.; Hrynko, T.A.; Peak, M.J.
1989-03-01
Irradiation of simian virus 40 (ori mutant)-transformed Chinese hamster embryo cells (OD4 line) with UV light induced a cellular capacity which supported a full cycle of helper-independent adeno-associated virus replication. Monochromatic UV light at 254 nm was about 1,000-fold more effective than UV light at 313 nm, indicating that cellular nucleic acid is the primary chromophore in the UV-induced process leading to permissiveness for adeno-associated virus replication. The UV irradiation and the infection could be separated for up to 12 h without substantial loss of permissiveness. During this time interval, the induction process was partly sensitive to cycloheximide, suggesting amore » requirement for de novo protein synthesis.« less
A library of programmable DNAzymes that operate in a cellular environment.
Kahan-Hanum, Maya; Douek, Yehonatan; Adar, Rivka; Shapiro, Ehud
2013-01-01
DNAzymes were used as inhibitory agents in a variety of experimental disease settings, such as cancer, viral infections and even HIV. Drugs that become active only upon the presence of preprogrammed abnormal environmental conditions may enable selective molecular therapy by targeting abnormal cells without injuring normal cells. Here we show a novel programmable DNAzyme library composed of variety of Boolean logic gates, including YES, AND, NOT, OR, NAND, ANDNOT, XOR, NOR and 3-input-AND gate, that uses both miRNAs and mRNAs as inputs. Each gate is based on the c-jun cleaving Dz13 DNAzyme and active only in the presence of specific input combinations. The library is modular, supports arbitrary inputs and outputs, cascadable, highly specific and robust. We demonstrate the library's potential diagnostic abilities on miRNA and mRNA combinations in cell lysate and its ability to operate in a cellular environment by using beacon-like c-jun mimicking substrate in living mammalian cells.
A library of programmable DNAzymes that operate in a cellular environment
Kahan-Hanum, Maya; Douek, Yehonatan; Adar, Rivka; Shapiro, Ehud
2013-01-01
DNAzymes were used as inhibitory agents in a variety of experimental disease settings, such as cancer, viral infections and even HIV. Drugs that become active only upon the presence of preprogrammed abnormal environmental conditions may enable selective molecular therapy by targeting abnormal cells without injuring normal cells. Here we show a novel programmable DNAzyme library composed of variety of Boolean logic gates, including YES, AND, NOT, OR, NAND, ANDNOT, XOR, NOR and 3-input-AND gate, that uses both miRNAs and mRNAs as inputs. Each gate is based on the c-jun cleaving Dz13 DNAzyme and active only in the presence of specific input combinations. The library is modular, supports arbitrary inputs and outputs, cascadable, highly specific and robust. We demonstrate the library's potential diagnostic abilities on miRNA and mRNA combinations in cell lysate and its ability to operate in a cellular environment by using beacon-like c-jun mimicking substrate in living mammalian cells. PMID:23525068
Giusi, G; Giordano, O; Scandurra, G; Rapisarda, M; Calvi, S; Ciofi, C
2016-04-01
Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz(1/2), while DC performances are limited only by the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Giusi, G.; Giordano, O.; Scandurra, G.
Measurements of current fluctuations originating in electron devices have been largely used to understand the electrical properties of materials and ultimate device performances. In this work, we propose a high-sensitivity measurement setup topology suitable for the automatic and programmable Direct-Current (DC), Capacitance-Voltage (CV), and gate-drain low frequency noise characterization of field effect transistors at wafer level. Automatic and programmable operation is particularly useful when the device characteristics relax or degrade with time due to optical, bias, or temperature stress. The noise sensitivity of the proposed topology is in the order of fA/Hz{sup 1/2}, while DC performances are limited only bymore » the source and measurement units used to bias the device under test. DC, CV, and NOISE measurements, down to 1 pA of DC gate and drain bias currents, in organic thin film transistors are reported to demonstrate system operation and performances.« less
Fabrication and characteristics of MOSFET protein chip for detection of ribosomal protein.
Park, Keun-Yong; Kim, Min-Suk; Choi, Sie-Young
2005-04-15
A metal oxide silicon field effect transistor (MOSFET) protein chip for the easy detection of protein was fabricated and its characteristics were investigated. Generally, the drain current of the MOSFET is varied by the gate potential. It is expected that the formation of an antibody-antigen complex on the gate of MOSFET would lead to a detectable change in the charge distribution and thus, directly modulate the drain current of MOSFET. As such, the drain current of the MOSFET protein chip can be varied by ribosomal proteins absorbed by the self-assembled monolayer (SAM) immobilized on the gate (Au) surface, as ribosomal protein has positive charge, and these current variations then used as the response of the protein chip. The gate of MOSFET protein chip is not directly biased by an external voltage source, so called open gate or floating gate MOSFET, but rather chemically modified by immobilized molecular receptors called self-assembled monolayer (SAM). In our experiments, the current variation in the proposed protein chip was about 8% with a protein concentration of 0.7 mM. As the protein concentration increased, the drain current also gradually increased. In addition, there were some drift of the drain current in the device. It is considered that these drift might be caused by the drift from the MOSFET itself or protein absorption procedures that are relied on the facile attachment of thiol (-S) ligands to the gate (Au) surface. We verified the formation of SAM on the gold surface and the absorption of protein through the surface plasmon resonance (SPR) measurement.
A floating-point/multiple-precision processor for airborne applications
NASA Technical Reports Server (NTRS)
Yee, R.
1982-01-01
A compact input output (I/O) numerical processor capable of performing floating-point, multiple precision and other arithmetic functions at execution times which are at least 100 times faster than comparable software emulation is described. The I/O device is a microcomputer system containing a 16 bit microprocessor, a numerical coprocessor with eight 80 bit registers running at a 5 MHz clock rate, 18K random access memory (RAM) and 16K electrically programmable read only memory (EPROM). The processor acts as an intelligent slave to the host computer and can be programmed in high order languages such as FORTRAN and PL/M-86.
A SPAD-based 3D imager with in-pixel TDC for 145ps-accuracy ToF measurement
NASA Astrophysics Data System (ADS)
Vornicu, I.; Carmona-Galán, R.; Rodríguez-Vázquez, Á.
2015-03-01
The design and measurements of a CMOS 64 × 64 Single-Photon Avalanche-Diode (SPAD) array with in-pixel Time-to-Digital Converter (TDC) are presented. This paper thoroughly describes the imager at architectural and circuit level with particular emphasis on the characterization of the SPAD-detector ensemble. It is aimed to 2D imaging and 3D image reconstruction in low light environments. It has been fabricated in a standard 0.18μm CMOS process, i. e. without high voltage or low noise features. In these circumstances, we are facing a high number of dark counts and low photon detection efficiency. Several techniques have been applied to ensure proper functionality, namely: i) time-gated SPAD front-end with fast active-quenching/recharge circuit featuring tunable dead-time, ii) reverse start-stop scheme, iii) programmable time resolution of the TDC based on a novel pseudo-differential voltage controlled ring oscillator with fast start-up, iv) a global calibration scheme against temperature and process variation. Measurements results of individual SPAD-TDC ensemble jitter, array uniformity and time resolution programmability are also provided.
NASA Astrophysics Data System (ADS)
Kim, Youngjun; Cho, Seongeun; Park, Byoungnam
2018-03-01
We report ultraviolet (UV)-induced optical gating in a Zn1-x Mg x O nanocrystal solid solution (NCSS) field effect transistor (FET) through a systematic study in which UV-induced charge transport properties are probed as a function of Mg composition. Change in the electrical properties of Zn1-x Mg x O NCSS associated with electronic traps is investigated by field effect-modulated current-voltage characteristic curves in the dark and under illumination. Under UV illumination, significant threshold voltage shift to a more negative value in an n-channel Zn1-x Mg x O NCSS FET is observed. Importantly, as the Mg composition increases, the effect of UV illumination on the threshold voltage shift is alleviated. We found that threshold voltage shift as a function of Mg composition in the dark and under illumination is due to difference in the deep trap density in the Zn1-x Mg x O NCSS. This is supported by Mg composition dependent photoluminescence intensity in the visible range and reduced FET mobility with Mg addition. The presence of the deep traps and the corresponding trap energy levels in the Zn1-x Mg x O NCSS are ensured by photoelectron spectroscopy in air.
Solar UV light regulates flavonoid metabolism in apple (Malus x domestica).
Henry-Kirk, Rebecca A; Plunkett, Blue; Hall, Miriam; McGhie, Tony; Allan, Andrew C; Wargent, Jason J; Espley, Richard V
2018-03-01
Ultraviolet-B light (UV-B) is one environmental signal perceived by plants that affects the flavonoid pathway and influences the levels of anthocyanins, flavonols, and proanthocyanidins. To understand the mechanisms underlying UV exposure, apple trees were grown under spectral filters that altered transmission of solar UV light. Fruit analysis showed that UV induced changes in physiology, metabolism, and gene expression levels during development over a season. These changes were sustained after storage. Under low UV, ripening was delayed, fruit size decreased, and anthocyanin and flavonols were reduced. Expression analysis showed changes in response to UV light levels for genes in the regulation and biosynthesis of anthocyanin and flavonols. Transcription of flavonol synthase (FLS), ELONGATED HYPOCOTYL 5 (HY5), MYB10, and MYB22 were down-regulated throughout fruit development under reduced UV. Functional testing showed that the FLS promoter was activated by HY5, and this response was enhanced by the presence of MYB22. The MYB22 promoter can also be activated by the anthocyanin regulator, MYB10. As ambient levels of UV light vary around the globe, this study has implications for future crop production, the quality of which can be determined by the response to UV. © 2018 John Wiley & Sons Ltd.
Inactivation of Salmonella enterica by UV-C Light Alone and in Combination with Mild Temperatures
Gayán, E.; Serrano, M. J.; Raso, J.; Álvarez, I.
2012-01-01
The aim of this investigation was to study the efficacy of the combined processes of UV light and mild temperatures for the inactivation of Salmonella enterica subsp. enterica and to explore the mechanism of inactivation. The doses to inactivate the 99.99% (4D) of the initial population ranged from 18.03 (Salmonella enterica serovar Typhimurium STCC 878) to 12.75 J ml−1 (Salmonella enterica serovar Enteritidis ATCC 13076). The pH and water activity of the treatment medium did not change the UV tolerance, but it decreased exponentially by increasing the absorption coefficient. An inactivating synergistic effect was observed by applying simultaneous UV light and heat treatment (UV-H). A less synergistic effect was observed by applying UV light first and heat subsequently. UV did not damage cell envelopes, but the number of injured cells was higher after a UV-H treatment than after heating. The synergistic effect observed by combining simultaneous UV and heat treatment opens the possibility to design combined treatments for pasteurization of liquid food with high UV absorptivity, such as fruit juices. PMID:23001665
Surface disinfection by exposure to germicidal UV light.
Katara, G; Hemvani, N; Chitnis, S; Chitnis, V; Chitnis, D S
2008-01-01
The present study was aimed to design a simple model to check efficacy of germicidal UV tube, to standardise the position, distance and time for UV light and also to find out its efficacy against medically important bacteria, the bacterial spores and fungi. The microbial cultures tested included gram positive and gram negative bacteria, bacterial spores and fungal spores. The microbes streaked on solid media were exposed to UV light. The inactivation of the order of four logs was observed for bacteria. UV light can have efficient inactivation of bacteria up to a distance of eight feet on either side and exposure time of 30 minutes is adequate.
NASA Technical Reports Server (NTRS)
Goldman, A.
1978-01-01
Two balloon flights reaching float altitudes of approximately 30 and 40 km respectively, were used to obtain scans of the ultraviolet and visible solar spectra. Both flights covered the UV (2800-3500A) at approximately 0.3A resolution and the visible at approximately 0.6A. Numerous scans were obtained during ascent and from float for both flights. All spectral scans obtained at float, from high sun to low sun, were calibrated in wavelength by using several standard solar spectra for line position references. Comparisons of low sun scans and high sun scans show significant atmospheric continuum extinction and have the potential of being used to identify atmospheric lines superimposed on the attenuated solar spectrum. The resolution was mathematically degraded to approximately 5A to better see the broad band atmospheric extinction. This low resolution is also appropriate for the available low resolution absorption coefficients of NO2 and O3, allowing the identification of NO2 and O3 features on the sunset spectra.
Erosion as a possible mechanism for the decrease of size of plastic pieces floating in oceans.
Resmeriță, Ana-Maria; Coroaba, Adina; Darie, Raluca; Doroftei, Florica; Spiridon, Iuliana; Simionescu, Bogdan C; Navard, Patrick
2018-02-01
A sea water wave tank fitted in an artificial UV light weathering chamber was built to study the behaviour of polypropylene (PP) injected pieces in close ocean-like conditions. In air, the same pieces sees a degradation in the bulk with a decrease of mechanical properties, a little change of crystal properties and nearly no change of surface chemistry. Weathering in the sea water wave tank shows only a surface changes, with no effect on crystals or mechanical properties with loss of small pieces of matter in the sub-micron range and a change of surface chemistry. This suggests an erosion dispersion mechanism. Such mechanism could explain why no particle smaller than about one millimeter is found when collecting plastic debris at sea: there are much smaller, eroded from plastic surfaces by a mechano-chemical process similar to the erosion mechanism found in the dispersion of agglomerate under flow. Copyright © 2017 Elsevier Ltd. All rights reserved.
Enhanced biosensing resolution with foundry fabricated individually addressable dual-gated ISFETs.
Duarte-Guevara, Carlos; Lai, Fei-Lung; Cheng, Chun-Wen; Reddy, Bobby; Salm, Eric; Swaminathan, Vikhram; Tsui, Ying-Kit; Tuan, Hsiao Chin; Kalnitsky, Alex; Liu, Yi-Shao; Bashir, Rashid
2014-08-19
The adaptation of semiconductor technologies for biological applications may lead to a new era of inexpensive, sensitive, and portable diagnostics. At the core of these developing technologies is the ion-sensitive field-effect transistor (ISFET), a biochemical to electrical transducer with seamless integration to electronic systems. We present a novel structure for a true dual-gated ISFET that is fabricated with a silicon-on-insulator (SOI) complementary metal-oxide-semiconductor process by Taiwan Semiconductor Manufacturing Company (TSMC). In contrast to conventional SOI ISFETs, each transistor has an individually addressable back-gate and a gate oxide that is directly exposed to the solution. The elimination of the commonly used floating gate architecture reduces the chance of electrostatic discharge and increases the potential achievable transistor density. We show that when operated in a "dual-gate" mode, the transistor response can exhibit sensitivities to pH changes beyond the Nernst limit. This enhancement in sensitivity was shown to increase the sensor's signal-to-noise ratio, allowing the device to resolve smaller pH changes. An improved resolution can be used to enhance small signals and increase the sensor accuracy when monitoring small pH dynamics in biological reactions. As a proof of concept, we demonstrate that the amplified sensitivity and improved resolution result in a shorter detection time and a larger output signal of a loop-mediated isothermal DNA amplification reaction (LAMP) targeting a pathogenic bacteria gene, showing benefits of the new structure for biosensing applications.
Younis, Mahmoud El-Baz; Hasaneen, Mohammed Naguib Abdel-Ghany; Abdel-Aziz, Heba Mahmoud Mohammed
2010-10-01
Exposure of dark- or ambient visible light-grown broad bean seedlings to low (LL) and high (HL) visible light intensities, UV-A or UV-C, either alone or in combination, induced significant increases in total phenolic compounds as well as in anthocyanins content, throughout the germination period, as compared with the respective levels in control seedlings. In general, as compared with control levels, exposure of both dark- or light-grown broad bean seedlings to LL, HL, UV-A or UV-C, induced significant increases in the contents of non-enzymatic antioxidants (total ascorbate; ASA-DASA and total glutathione; GSSG-GSH) and enzymatic antioxidant activities (superoxide dismutase; SOD, catalase; CAT, ascorbate peroxidase; APO and glutathione reductase; GR). The obtained results are discussed in relation to induced mechanisms of protection and repair from the inevitable exposure to damaging visible light and UV-radiation. © 2010 Landes Bioscience
Hasaneen, Mohammed Naguib Abdel-Ghany; Abdel-Aziz, Heba Mahmoud Mohammed
2010-01-01
Exposure of dark- or ambient visible light-grown broad bean seedlings to low (LL) and high (HL) visible light intensities, UV-A or UV-C, either alone or in combination, induced significant increases in total phenolic compounds as well as in anthocyanins content, throughout the germination period, as compared with the respective levels in control seedlings. In general, as compared with control levels, exposure of both dark- or light-grown broad bean seedlings to LL, HL, UV-A or UV-C, induced significant increases in the contents of non-enzymatic antioxidants (total ascorbate; ASA-DASA and total glutathione; GSSG-GSH) and enzymatic antioxidant activities (superoxide dismutase; SOD, catalase; CAT, ascorbate peroxidase; APO and glutathione reductase; GR). The obtained results are discussed in relation to induced mechanisms of protection and repair from the inevitable exposure to damaging visible light and UV radiation. PMID:20505357
NASA Astrophysics Data System (ADS)
Bhattacharyya, Arghyadeep; Makhal, Subhash Chandra; Ganguly, Aniruddha; Guchhait, Nikhil
2018-03-01
Two anthracene based receptors ADAMN and ANOPD were synthesized and characterized. The response of both towards F- ion has been monitored by UV-Vis and 1H NMR spectroscopy as well as naked eye color change. Interestingly, change in acceptor unit endows ADAMN to behave as a INHIBIT logic gate with F- and H+ as inputs whereas ANOPD remains totally silent towards F-. The reason for this differential behavior has been explored by DFT calculations. The practical utility of the logic gate response of ADAMN was explored by successful paper strip experiment.
Kim, Soo-Ji; Kim, Do-Kyun
2015-01-01
UVC light is a widely used sterilization technology. However, UV lamps have several limitations, including low activity at refrigeration temperatures, a long warm-up time, and risk of mercury exposure. UV-type lamps only emit light at 254 nm, so as an alternative, UV light-emitting diodes (UV-LEDs) which can produce the desired wavelengths have been developed. In this study, we validated the inactivation efficacy of UV-LEDs by wavelength and compared the results to those of conventional UV lamps. Selective media inoculated with Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes were irradiated using UV-LEDs at 266, 270, 275, and 279 nm in the UVC spectrum at 0.1, 0.2, 0.5, and 0.7 mJ/cm2, respectively. The radiation intensity of the UV-LEDs was about 4 μW/cm2, and UV lamps were covered with polypropylene films to adjust the light intensity similar to those of UV-LEDs. In addition, we applied UV-LED to sliced cheese at doses of 1, 2, and 3 mJ/cm2. Our results showed that inactivation rates after UV-LED treatment were significantly different (P < 0.05) from those of UV lamps at a similar intensity. On microbiological media, UV-LED treatments at 266 and 270 nm showed significantly different (P < 0.05) inactivation effects than other wavelength modules. For sliced cheeses, 4- to 5-log reductions occurred after treatment at 3 mJ/cm2 for all three pathogens, with negligible generation of injured cells. PMID:26386061
1987-06-01
Debris diversion boom and debris, Appalachian Power Company Station at Winfield Lock and Dam, Kanavha River, West Virginia. Than, T 9 (sin a) - 1.94...control dam. Central gate Is blocked partly open causing .ime downstream scour. Water flows right to left. BOTTOM-Debris diversion boom and debris... Appalachian Power Company Station at Winfield Lock and Dam, Kanawha River, West Virginia. - 0 .’ Unclass ified SECURITY CLASSIFICATION OF THIS PAGE for- 40
Radiation Effects on Advanced Flash Memories
NASA Technical Reports Server (NTRS)
Nguyen, D. N.; Guertin, S.; Swift, G. M.; Johnston, A. H.
1998-01-01
Flash memories have evolved very rapidly in recent ears. New design techniques such as multilevel storage have been proposed to increase storage density, and are now available commercially. Threshold voltage distributions for single- and three-level technologies are compared. In order to implement this technology special circuitry must be added to allow the amount of charge stored in the floating gate to be controlled within narrow limits during the writing and also to detect the different amounts of charge during reading.
Federal Register 2010, 2011, 2012, 2013, 2014
2010-11-10
...]37[min]10.0[sec] W; thence easterly along the Marinette Marine Corporation pier to the point of origin. The restricted area will be marked by a lighted and signed floating boat barrier. (b) The... floating boat barrier without permission from the United States Navy, Supervisor of Shipbuilding Gulf Coast...
33 CFR 162.130 - Connecting waters from Lake Huron to Lake Erie; general rules.
Code of Federal Regulations, 2014 CFR
2014-07-01
... vessel astern, alongside, or by pushing ahead; and (iii) Each dredge and floating plant. (4) The traffic... towing another vessel astern, alongside or by pushing ahead; and (iv) Each dredge and floating plant. (c... Light to the lakeward limits of the improved navigation channels at the head of Lake Erie. District...
33 CFR 162.130 - Connecting waters from Lake Huron to Lake Erie; general rules.
Code of Federal Regulations, 2013 CFR
2013-07-01
... vessel astern, alongside, or by pushing ahead; and (iii) Each dredge and floating plant. (4) The traffic... towing another vessel astern, alongside or by pushing ahead; and (iv) Each dredge and floating plant. (c... Light to the lakeward limits of the improved navigation channels at the head of Lake Erie. District...
33 CFR 162.130 - Connecting waters from Lake Huron to Lake Erie; general rules.
Code of Federal Regulations, 2012 CFR
2012-07-01
... vessel astern, alongside, or by pushing ahead; and (iii) Each dredge and floating plant. (4) The traffic... towing another vessel astern, alongside or by pushing ahead; and (iv) Each dredge and floating plant. (c... Light to the lakeward limits of the improved navigation channels at the head of Lake Erie. District...
46 CFR 169.537 - Description of equipment for lifefloats.
Code of Federal Regulations, 2012 CFR
2012-10-01
... type. Boathook handles must be of clear grained white ash, or equivalent, not less than 6 feet long and 11/2 inches in diameter. (b) Lifeline and pendants. The lifeline and pendants must be as furnished by... in such a way it runs freely when the life float floats away from the sinking vessel. (e) Water light...
A novel micromixer based on the alternating current-flow field effect transistor.
Wu, Yupan; Ren, Yukun; Tao, Ye; Hou, Likai; Hu, Qingming; Jiang, Hongyuan
2016-12-20
Induced-charge electroosmosis (ICEO) phenomena have been attracting considerable attention as a means for pumping and mixing in microfluidic systems with the advantage of simple structures and low-energy consumption. We propose the first effort to exploit a fixed-potential ICEO flow around a floating electrode for microfluidic mixing. In analogy with the field effect transistor (FET) in microelectronics, the floating electrode act as a "gate" electrode for generating asymmetric ICEO flow and thus the device is called an AC-flow FET (AC-FFET). We take advantage of a tandem electrode configuration containing two biased center metal strips arranged in sequence at the bottom of the channel to generate asymmetric vortexes. The current device is manufactured on low-cost glass substrates via an easy and reliable process. Mixing experiments were conducted in the proposed device and the comparison between simulation and experimental results was also carried out, which indicates that the micromixer permits an efficient mixing effect. The mixing performance can be further enhanced by the application of a suitable phase difference between the driving electrode and the gate electrode or a square wave signal. Finally, we performed a critical analysis of the proposed micromixer in comparison with different mixer designs using a comparative mixing index (CMI). The novel methods put forward here offer a simple solution to mixing issues in microfluidic systems.
Dielectrophoresis-Assisted Integration of 1024 Carbon Nanotube Sensors into a CMOS Microsystem.
Seichepine, Florent; Rothe, Jörg; Dudina, Alexandra; Hierlemann, Andreas; Frey, Urs
2017-05-01
Carbon-nanotube (CNT)-based sensors offer the potential to detect single-molecule events and picomolar analyte concentrations. An important step toward applications of such nanosensors is their integration in large arrays. The availability of large arrays would enable multiplexed and parallel sensing, and the simultaneously obtained sensor signals would facilitate statistical analysis. A reliable method to fabricate an array of 1024 CNT-based sensors on a fully processed complementary-metal-oxide-semiconductor microsystem is presented. A high-yield process for the deposition of CNTs from a suspension by means of liquid-coupled floating-electrode dielectrophoresis (DEP), which yielded 80% of the sensor devices featuring between one and five CNTs, is developed. The mechanism of floating-electrode DEP on full arrays and individual devices to understand its self-limiting behavior is studied. The resistance distributions across the array of CNT devices with respect to different DEP parameters are characterized. The CNT devices are then operated as liquid-gated CNT field-effect-transistors (LG-CNTFET) in liquid environment. Current dependency to the gate voltage of up to two orders of magnitude is recorded. Finally, the sensors are validated by studying the pH dependency of the LG-CNTFET conductance and it is demonstrated that 73% of the CNT sensors of a given microsystem show a resistance decrease upon increasing the pH value. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
Jayant, Krishna; Singhai, Amit; Cao, Yingqiu; Phelps, Joshua B; Lindau, Manfred; Holowka, David A; Baird, Barbara A; Kan, Edwin C
2015-12-21
We present non-faradaic electrochemical recordings of exocytosis from populations of mast and chromaffin cells using chemoreceptive neuron MOS (CνMOS) transistors. In comparison to previous cell-FET-biosensors, the CνMOS features control (CG), sensing (SG) and floating gates (FG), allows the quiescent point to be independently controlled, is CMOS compatible and physically isolates the transistor channel from the electrolyte for stable long-term recordings. We measured exocytosis from RBL-2H3 mast cells sensitized by IgE (bound to high-affinity surface receptors FcεRI) and stimulated using the antigen DNP-BSA. Quasi-static I-V measurements reflected a slow shift in surface potential () which was dependent on extracellular calcium ([Ca]o) and buffer strength, which suggests sensitivity to protons released during exocytosis. Fluorescent imaging of dextran-labeled vesicle release showed evidence of a similar time course, while un-sensitized cells showed no response to stimulation. Transient recordings revealed fluctuations with a rapid rise and slow decay. Chromaffin cells stimulated with high KCl showed both slow shifts and extracellular action potentials exhibiting biphasic and inverted capacitive waveforms, indicative of varying ion-channel distributions across the cell-transistor junction. Our approach presents a facile method to simultaneously monitor exocytosis and ion channel activity with high temporal sensitivity without the need for redox chemistry.
NASA Astrophysics Data System (ADS)
Hong, Augustin Jinwoo
Non-volatile memory devices have attracted much attention because data can be retained without power consumption more than a decade. Therefore, non-volatile memory devices are essential to mobile electronic applications. Among state of the art non-volatile memory devices, NAND flash memory has earned the highest attention because of its ultra-high scalability and therefore its ultra-high storage capacity. However, human desire as well as market competition requires not only larger storage capacity but also lower power consumption for longer battery life time. One way to meet this human desire and extend the benefits of NAND flash memory is finding out new materials for storage layer inside the flash memory, which is called floating gate in the state of the art flash memory device. In this dissertation, we study new materials for the floating gate that can lower down the power consumption and increase the storage capacity at the same time. To this end, we employ various materials such as metal nanodot, metal thin film and graphene incorporating complementary-metal-oxide-semiconductor (CMOS) compatible processes. Experimental results show excellent memory effects at relatively low operating voltages. Detailed physics and analysis on experimental results are discussed. These new materials for data storage can be promising candidates for future non-volatile memory application beyond the state of the art flash technologies.
Jayant, Krishna; Singhai, Amit; Cao, Yingqiu; Phelps, Joshua B.; Lindau, Manfred; Holowka, David A.; Baird, Barbara A.; Kan, Edwin C.
2015-01-01
We present non-faradaic electrochemical recordings of exocytosis from populations of mast and chromaffin cells using chemoreceptive neuron MOS (CνMOS) transistors. In comparison to previous cell-FET-biosensors, the CνMOS features control (CG), sensing (SG) and floating gates (FG), allows the quiescent point to be independently controlled, is CMOS compatible and physically isolates the transistor channel from the electrolyte for stable long-term recordings. We measured exocytosis from RBL-2H3 mast cells sensitized by IgE (bound to high-affinity surface receptors FcεRI) and stimulated using the antigen DNP-BSA. Quasi-static I-V measurements reflected a slow shift in surface potential () which was dependent on extracellular calcium ([Ca]o) and buffer strength, which suggests sensitivity to protons released during exocytosis. Fluorescent imaging of dextran-labeled vesicle release showed evidence of a similar time course, while un-sensitized cells showed no response to stimulation. Transient recordings revealed fluctuations with a rapid rise and slow decay. Chromaffin cells stimulated with high KCl showed both slow shifts and extracellular action potentials exhibiting biphasic and inverted capacitive waveforms, indicative of varying ion-channel distributions across the cell-transistor junction. Our approach presents a facile method to simultaneously monitor exocytosis and ion channel activity with high temporal sensitivity without the need for redox chemistry. PMID:26686301
An imaging system for PLIF/Mie measurements for a combusting flow
NASA Technical Reports Server (NTRS)
Wey, C. C.; Ghorashi, B.; Marek, C. J.; Wey, C.
1990-01-01
The equipment required to establish an imaging system can be divided into four parts: (1) the light source and beam shaping optics; (2) camera and recording; (3) image acquisition and processing; and (4) computer and output systems. A pulsed, Nd:YAG-pummped, frequency-doubled dye laser which can freeze motion in the flowfield is used for an illumination source. A set of lenses is used to form the laser beam into a sheet. The induced fluorescence is collected by an UV-enhanced lens and passes through an UV-enhanced microchannel plate intensifier which is optically coupled to a gated solid state CCD camera. The output of the camera is simultaneously displayed on a monitor and recorded on either a laser videodisc set of a Super VHS VCR. This videodisc set is controlled by a minicomputer via a connection to the RS-232C interface terminals. The imaging system is connected to the host computer by a bus repeater and can be multiplexed between four video input sources. Sample images from a planar shear layer experiment are presented to show the processing capability of the imaging system with the host computer.
Modeling of a UV laser beam—silicon nitride interaction
NASA Astrophysics Data System (ADS)
Dgheim, J. A.
2016-11-01
A numerical model is developed to study heat and radiation transfers during the interaction between a UV laser beam and silicon nitride. The laser beam has temporal Gaussian or Gate shapes of a wavelength of 247 nm, with pulse duration of 27 ns. The mathematical model is based on the heat equation coupled to Lambert-Beer relationship by taking into account the conduction, convection and radiation phenomena. The resulting equations are schemed by the finite element method. Comparison with the literature shows qualitative and quantitative agreements. The investigated parameters are the temperature, the timing of the melting process and the melting phase thickness. The effects of the laser fluences, ranging from 500 to 16 000 J.m-2, the Gaussian and Gate shapes on the heat transfer, and the melting phenomenon are studied.
Performance characteristics of a nanoscale double-gate reconfigurable array
NASA Astrophysics Data System (ADS)
Beckett, Paul
2008-12-01
The double gate transistor is a promising device applicable to deep sub-micron design due to its inherent resistance to short-channel effects and superior subthreshold performance. Using both TCAD and SPICE circuit simulation, it is shown that the characteristics of fully depleted dual-gate thin-body Schottky barrier silicon transistors will not only uncouple the conflicting requirements of high performance and low standby power in digital logic, but will also allow the development of a locally-connected reconfigurable computing mesh. The magnitude of the threshold shift effect will scale with device dimensions and will remain compatible with oxide reliability constraints. A field-programmable architecture based on the double gate transistor is described in which the operating point of the circuit is biased via one gate while the other gate is used to form the logic array, such that complex heterogeneous computing functions may be developed from this homogeneous, mesh-connected organization.
Petritz, Andreas; Wolfberger, Archim; Fian, Alexander; Krenn, Joachim R.; Griesser, Thomas; Stadlober, Barbara
2013-01-01
A high-performing bottom-gate top-contact pentacene-based oTFT technology with an ultrathin (25–48 nm) and electrically dense photopatternable polymeric gate dielectric layer is reported. The photosensitive polymer poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) is patterned directly by UV-exposure (λ = 254 nm) at a dose typical for conventionally used negative photoresists without the need for any additional photoinitiator. The polymer itself undergoes a photo-Fries rearrangement reaction under UV illumination, which is accompanied by a selective cross-linking of the macromolecules, leading to a change in solubility in organic solvents. This crosslinking reaction and the negative photoresist behavior are investigated by means of sol–gel analysis. The resulting transistors show a field-effect mobility up to 0.8 cm2 V−1 s−1 at an operation voltage as low as −4.5 V. The ultra-low subthreshold swing in the order of 0.1 V dec−1 as well as the completely hysteresis-free transistor characteristics are indicating a very low interface trap density. It can be shown that the device performance is completely stable upon UV-irradiation and development according to a very robust chemical rearrangement. The excellent interface properties, the high stability and the small thickness make the PNDPE gate dielectric a promising candidate for fast organic electronic circuits. PMID:24748853
Faseela, Parammal; Puthur, Jos T
2018-01-01
High light and ultraviolet-B radiation (UV-B) are generally considered to have negative impact on photosynthesis and plant growth. The present study evaluates the tolerance potential of three cultivars of Oryza sativa L. (Kanchana, Mattatriveni and Harsha) seedlings towards high light and UV-B stress on the basis of photosynthetic pigment degradation, chlorophyll a fluorescence parameters and rate of lipid peroxidation, expressed by malondialdehyde content. Surprisingly, it was revealed that Kanchana was the most sensitive cultivar towards high light and at the same time it was the most tolerant cultivar towards UV-B stress. This contrasting feature of Kanchana towards high light and UV-B tolerance was further studied by analyzing photosystem (PS) I and II activity, mitochondrial activity, chlorophyll a fluorescence transient, enzymatic and non-enzymatic antioxidant defense system. Due to the occurrence of more PS I and PSII damages, the inhibition of photochemical efficiency and emission of dissipated energy as heat or fluorescence per PSII reaction center was higher upon high light exposure than UV-B treatments in rice seedlings of Kanchana. The mitochondrial activity was also found to be drastically altered upon high light as compared to UV-B treatments. The UV-B induced accumulation of non-enzymatic antioxidants (proline, total phenolics, sugar and ascorbate) and enzymatic antioxidants (ascorbate peroxidase, guaiacol peroxidase, superoxide dismutase and glutathione reductase) in rice seedlings than those subjected to high light exposure afforded more efficient protection against UV-B radiation in rice seedlings. Our results proved that high tolerance of Kanchana towards UV-B than high light treatments, correlated linearly with the protected photosynthetic and mitochondrial machinery which was provided by upregulation of antioxidants particularly by total phenolics, ascorbate and ascorbate peroxidase in rice seedlings. Data presented in this study conclusively proved that rice cultivar Kanchana respond to different environmental signals independently and tolerance mechanisms to individual stress factors was also varied. Copyright © 2017 Elsevier B.V. All rights reserved.
Suppression of cucumber powdery mildew by UV-B is affected by background light quality
USDA-ARS?s Scientific Manuscript database
Brief (5-10 min) exposure to UV-B radiation (280-300 nm) suppressed powdery mildew (Podosphaera xanthii) on Cucumis sativus. The effect was enhanced by red light (600-660 nm), but offset by blue light (420-500 nm) and UV-A (300-420 nm). Compared to untreated controls, 2 h red light from specific lig...
In-plane optical anisotropy of layered gallium telluride
Huang, Shengxi; Tatsumi, Yuki; Ling, Xi; ...
2016-08-16
Layered gallium telluride (GaTe) has attracted much attention recently, due to its extremely high photoresponsivity, short response time, and promising thermoelectric performance. Different from most commonly studied two-dimensional (2D) materials, GaTe has in-plane anisotropy and a low symmetry with the C 2h 3 space group. Investigating the in-plane optical anisotropy, including the electron–photon and electron–phonon interactions of GaTe is essential in realizing its applications in optoelectronics and thermoelectrics. In this work, the anisotropic light-matter interactions in the low-symmetry material GaTe are studied using anisotropic optical extinction and Raman spectroscopies as probes. Our polarized optical extinction spectroscopy reveals the weak anisotropymore » in optical extinction spectra for visible light of multilayer GaTe. Polarized Raman spectroscopy proves to be sensitive to the crystalline orientation of GaTe, and shows the intricate dependences of Raman anisotropy on flake thickness, photon and phonon energies. Such intricate dependences can be explained by theoretical analyses employing first-principles calculations and group theory. Furthermore, these studies are a crucial step toward the applications of GaTe especially in optoelectronics and thermoelectrics, and provide a general methodology for the study of the anisotropy of light-matter interactions in 2D layered materials with in-plane anisotropy.« less
Stacked Device of Polymer Light-Emitting Diode Driven by Metal-Base Organic Transistor
NASA Astrophysics Data System (ADS)
Yoneda, Kazuhiro; Nakayama, Ken-ichi; Yokoyama, Masaaki
2008-02-01
We fabricated a new light-emitting device that combined a polymer light-emitting diode (PLED) and a vertical-type metal-base organic transistor (MBOT) through a floating electrode. By employing a layered floating electrode of Mg:Ag/Au, the MBOT on the PLED was operated successfully and a current amplification factor of approximately 20 was observed. The PLED luminescence exceeding 100 cd/m2 can be modulated using the MBOT with a low base voltage (2.8 V) and VCC (8 V). The emission contrast (on/off ratio) was improved with insertion of an insulating layer under the base, and the cut-off frequency was estimated to be 8 kHz. This device is expected to be a promising driving system of organic light-emitting diode (OLED), realizing low voltage and high numerical aperture.
Wargent, J J; Nelson, B C W; McGhie, T K; Barnes, P W
2015-05-01
UV-B radiation is often viewed as a source of stress for higher plants. In particular, photosynthetic function has been described as a common target for UV-B impairment; yet as our understanding of UV-B photomorphogenesis increases, there are opportunities to expand the emerging paradigm of regulatory UV response. Lactuca sativa is an important dietary crop species and is often subjected to rapid sunlight exposure at field transfer. Acclimation to UV-B and visible light conditions in L. sativa was dissected using gas exchange and chlorophyll fluorescence measurements, in addition to non-destructive assessments of UV epidermal shielding (SUV ). After UV-B treatment, seedlings were subjected to wide-range metabolomic analysis using liquid chromatography hybrid quadrupole time-of-flight high-resolution mass spectrometry (LC-QTOF-HRMS). During the acclimation period, net photosynthetic rate increased in UV-treated plants, epidermal UV shielding increased in both subsets of plants transferred to the acclimatory conditions (UV+/UV- plants) and Fv /Fm declined slightly in UV+/UV- plants. Metabolomic analysis revealed that a key group of secondary compounds was up-regulated by higher light conditions, yet several of these compounds were elevated further by UV-B radiation. In conclusion, acclimation to UV-B radiation involves co-protection from the effects of visible light, and responses to UV-B radiation at a photosynthetic level may not be consistently viewed as damaging to plant development. © 2014 John Wiley & Sons Ltd.
NASA Technical Reports Server (NTRS)
Asato, Y.
1972-01-01
Three independently isolated ultraviolet light sensitive (uvs) mutants of Anacystis nidulans were characterized. Strain uvs-1 showed the highest sensitivity to UV by its greatly reduced photoreactivation capacity following irradiation. Pretreatment with caffeine suppressed the dark-survival curve of strain uvs-1, thus indicating the presence of excision enzymes involved in dark repair. Under 'black' and 'white' illumination, strain uvs-1 shows photorecovery properties comparable with wild-type cultures. Results indicate that strains uvs-1, uvs-35, and uvs-88 are probably genetically distinct UV-sensitive mutants.
Optimal quantum control of multimode couplings between trapped ion qubits for scalable entanglement.
Choi, T; Debnath, S; Manning, T A; Figgatt, C; Gong, Z-X; Duan, L-M; Monroe, C
2014-05-16
We demonstrate entangling quantum gates within a chain of five trapped ion qubits by optimally shaping optical fields that couple to multiple collective modes of motion. We individually address qubits with segmented optical pulses to construct multipartite entangled states in a programmable way. This approach enables high-fidelity gates that can be scaled to larger qubit registers for quantum computation and simulation.
Programmable architecture for pixel level processing tasks in lightweight strapdown IR seekers
NASA Astrophysics Data System (ADS)
Coates, James L.
1993-06-01
Typical processing tasks associated with missile IR seeker applications are described, and a straw man suite of algorithms is presented. A fully programmable multiprocessor architecture is realized on a multimedia video processor (MVP) developed by Texas Instruments. The MVP combines the elements of RISC, floating point, advanced DSPs, graphics processors, display and acquisition control, RAM, and external memory. Front end pixel level tasks typical of missile interceptor applications, operating on 256 x 256 sensor imagery, can be processed at frame rates exceeding 100 Hz in a single MVP chip.
Thayer, Zaneta M
2014-04-15
Skin color has been proposed to contribute to race-based health disparities in the United States because of differences in ultraviolet (UV) light-induced vitamin D synthesis. The prediction of this hypothesis, herein named the UVD hypothesis, is that racial disparities in health outcomes are correlated with UV light availability. This paper investigates whether UV light availability is associated with disparities in the rates of low birth weight (LBW) and preterm birth (PTB) between whites and blacks, because these outcomes are thought to be influenced by vitamin D status and to shape disease risk in later life. Data on LBW and PTB from 2007 (n = 2,825,620 births) were compared with data on UV light exposure across the United States. Contrary to the predictions of the UVD hypothesis, LBW and PTB rate disparities were greatest in states with the highest UV light exposure. Notably, income inequality was positively and significantly related to LBW and PTB disparities, even after controlling for UV light availability. The results of this analysis demonstrate that there is a significant environmental gradient in racial disparities in birth outcomes in the United States, but other social or environmental factors associated with living in the southern United States are likely stronger contributors to disparities in birth outcomes than UV light-induced vitamin D status.
33 CFR 88.15 - Lights on dredge pipelines.
Code of Federal Regulations, 2010 CFR
2010-07-01
... 33 Navigation and Navigable Waters 1 2010-07-01 2010-07-01 false Lights on dredge pipelines. 88.15... NAVIGATION RULES ANNEX V: PILOT RULES § 88.15 Lights on dredge pipelines. Dredge pipelines that are floating or supported on trestles shall display the following lights at night and in periods of restricted...
33 CFR 88.15 - Lights on dredge pipelines.
Code of Federal Regulations, 2013 CFR
2013-07-01
... 33 Navigation and Navigable Waters 1 2013-07-01 2013-07-01 false Lights on dredge pipelines. 88.15... NAVIGATION RULES ANNEX V: PILOT RULES § 88.15 Lights on dredge pipelines. Dredge pipelines that are floating or supported on trestles shall display the following lights at night and in periods of restricted...
33 CFR 88.15 - Lights on dredge pipelines.
Code of Federal Regulations, 2014 CFR
2014-07-01
... 33 Navigation and Navigable Waters 1 2014-07-01 2014-07-01 false Lights on dredge pipelines. 88.15... NAVIGATION RULES ANNEX V: PILOT RULES § 88.15 Lights on dredge pipelines. Dredge pipelines that are floating or supported on trestles shall display the following lights at night and in periods of restricted...
33 CFR 88.15 - Lights on dredge pipelines.
Code of Federal Regulations, 2011 CFR
2011-07-01
... 33 Navigation and Navigable Waters 1 2011-07-01 2011-07-01 false Lights on dredge pipelines. 88.15... NAVIGATION RULES ANNEX V: PILOT RULES § 88.15 Lights on dredge pipelines. Dredge pipelines that are floating or supported on trestles shall display the following lights at night and in periods of restricted...
33 CFR 88.15 - Lights on dredge pipelines.
Code of Federal Regulations, 2012 CFR
2012-07-01
... 33 Navigation and Navigable Waters 1 2012-07-01 2012-07-01 false Lights on dredge pipelines. 88.15... NAVIGATION RULES ANNEX V: PILOT RULES § 88.15 Lights on dredge pipelines. Dredge pipelines that are floating or supported on trestles shall display the following lights at night and in periods of restricted...
Radiation damage of all-silica fibers in the UV region
NASA Astrophysics Data System (ADS)
Gombert, Joerg; Ziegler, M.; Assmus, J.; Klein, Karl-Friedrich; Nelson, Gary W.; Clarkin, James P.; Pross, H.; Kiefer, J.
1999-04-01
Since several years, UVI-fibers having higher solarization- resistance are well known stimulating new fiber-optic applications in the UV-region below 250 nm. Besides the description of the improved transmission properties of UV- light from different UV-sources, the mechanisms of improvement have been discussed in detail. The UV-defects, mainly the E'- center with the UV-absorption band around 215 nm, were passivated by using hydrogen-doping. Besides DUV-light, ionizing radiation like Gamma-radiation or X-rays can create similar defects in the UV-region. In the past, the radiation- damage in the UV-region was studied on silica bulk samples: again, E'-centers were generated. Up to now, no UV- transmission through a 1 m long fiber during or after Gamma- radiation had been observed. However, the hydrogen in the UVI- fibers behaves the same for Gamma-irradiation, leading to a passivation of the radiation-induced defects and an improved transmission in the UV-C region below 250 nm. On this report, the influence of total dose and fiber diameter on the UV- damage after irradiation will be described and discussed. In addition, we will include annealing studies, with and without UV-light. Based on our results, the standard process of Gamma- sterilization with a total dose of approx. 2 Mrad can be used for UVI-fibers resulting in a good UV-transmission below 320 nm. Excimer-laser light at 308 nm (XeCl) and 248 nm (KrF) and deuterium-lamp light with the full spectrum starting at 200 nm can also be transmitted.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Keller, L.C.; Thompson, T.L.; Maxcy, R.B.
1982-02-01
A highly radiation-resistant member of the Moraxella-Acinetobacter group, isolate 4, obtained from meat, was studied to determine the effect of preexposure to UV radiation on subsequent UV light resistance. Cultures that were preexposed to UV light and incubated for a short time in plate count broth exhibited increased survival of a UV light challenge dose. This response was inhibited in the presence of chloramphenicol. Frequencies of mutation to streptomycin, trimethoprim, and sulfanilamide resistance remained the same after the induction of this survival response and were not altered by treatment with mutagens, with the exception of mutation to streptomycin resistance aftermore » ..gamma..-irradiation or nitrosoguanidine or methyl methane sulfonate treatment. The results indicated that isolate 4 has a UV light-inducible UV light resistance mechanism which is not associated with increased mutagenesis. The characteristics of the radiation resistance response in this organism are similar to those of certain other common food contaminants. Therefore, considered as part of the total microflora of meat, isolate 4 and the other radiation-resistant Moraxella-Acinetobacter isolates should not pose unique problems in a proposed radappertizaton process.« less
UV-B light contributes directly to the synthesis of chiloglottone floral volatiles
Amarasinghe, Ranamalie; Poldy, Jacqueline; Matsuba, Yuki; Barrow, Russell A.; Hemmi, Jan M.; Pichersky, Eran; Peakall, Rod
2015-01-01
Background and Aims Australian sexually deceptive Chiloglottis orchids attract their specific male wasp pollinators by means of 2,5-dialkylcyclohexane-1,3-diones or ‘chiloglottones’, representing a newly discovered class of volatiles with unique structures. This study investigated the hypothesis that UV-B light at low intensities is directly required for chiloglottone biosynthesis in Chiloglottis trapeziformis. Methods Chiloglottone production occurs only in specific tissue (the callus) of the labellum. Cut buds and flowers, and whole plants with buds and flowers, sourced from the field, were kept in a growth chamber and interactions between growth stage of the flowers and duration and intensity of UV-B exposure on chiloglottone production were studied. The effects of the protein synthesis inhibitor cycloheximide were also examined. Key Results Chiloglottone was not present in buds, but was detected in buds that were manually opened and then exposed to sunlight, or artificial UV-B light for ≥5 min. Spectrophotometry revealed that the sepals and petals blocked UV-B light from reaching the labellum inside the bud. Rates of chiloglottone production increased with developmental stage, increasing exposure time and increasing UV-B irradiance intensity. Cycloheximide did not inhibit the initial production of chiloglottone within 5 min of UV-B exposure. However, inhibition of chiloglottone production by cycloheximide occurred over 2 h of UV-B exposure, indicating a requirement for de novo protein synthesis to sustain chiloglottone production under UV-B. Conclusions The sepals and petals of Chiloglottis orchids strongly block UV-B wavelengths of light, preventing chiloglottone production inside the bud. While initiation of chiloglottone biosynthesis requires only UV-B light, sustained chiloglottone biosynthesis requires both UV-B and de novo protein biosynthesis. The internal amounts of chiloglottone in a flower reflect the interplay between developmental stage, duration and intensity of UV-B exposure, de novo protein synthesis, and feedback loops linked to the starting amount of chiloglottone. It is concluded that UV-B light contributes directly to chiloglottone biosynthesis. These findings suggest an entirely new and unexpected biochemical reaction that might also occur in taxa other than these orchids. PMID:25649114
High-performance reconfigurable coincidence counting unit based on a field programmable gate array.
Park, Byung Kwon; Kim, Yong-Su; Kwon, Osung; Han, Sang-Wook; Moon, Sung
2015-05-20
We present a high-performance reconfigurable coincidence counting unit (CCU) using a low-end field programmable gate array (FPGA) and peripheral circuits. Because of the flexibility guaranteed by the FPGA program, we can easily change system parameters, such as internal input delays, coincidence configurations, and the coincidence time window. In spite of a low-cost implementation, the proposed CCU architecture outperforms previous ones in many aspects: it has 8 logic inputs and 4 coincidence outputs that can measure up to eight-fold coincidences. The minimum coincidence time window and the maximum input frequency are 0.47 ns and 163 MHz, respectively. The CCU will be useful in various experimental research areas, including the field of quantum optics and quantum information.
Lee, James W.; Thundat, Thomas G.
2006-04-25
An apparatus for carrying out the separation, detection, and/or counting of single molecules at nanometer scale. Molecular separation is achieved by driving single molecules through a microfluidic or nanofluidic medium using programmable and coordinated electric fields. In various embodiments, the fluidic medium is a strip of hydrophilic material on nonconductive hydrophobic surface, a trough produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base, or a covered passageway produced by parallel strips of hydrophobic nonconductive material on a hydrophilic base together with a nonconductive cover on the parallel strips of hydrophobic nonconductive material. The molecules are detected and counted using nanoelectrode-gated electron tunneling methods, dielectric monitoring, and other methods.
Moreno-Tapia, Sandra Veronica; Vera-Salas, Luis Alberto; Osornio-Rios, Roque Alfredo; Dominguez-Gonzalez, Aurelio; Stiharu, Ion; de Jesus Romero-Troncoso, Rene
2010-01-01
Computer numerically controlled (CNC) machines have evolved to adapt to increasing technological and industrial requirements. To cover these needs, new generation machines have to perform monitoring strategies by incorporating multiple sensors. Since in most of applications the online Processing of the variables is essential, the use of smart sensors is necessary. The contribution of this work is the development of a wireless network platform of reconfigurable smart sensors for CNC machine applications complying with the measurement requirements of new generation CNC machines. Four different smart sensors are put under test in the network and their corresponding signal processing techniques are implemented in a Field Programmable Gate Array (FPGA)-based sensor node. PMID:22163602
Moreno-Tapia, Sandra Veronica; Vera-Salas, Luis Alberto; Osornio-Rios, Roque Alfredo; Dominguez-Gonzalez, Aurelio; Stiharu, Ion; Romero-Troncoso, Rene de Jesus
2010-01-01
Computer numerically controlled (CNC) machines have evolved to adapt to increasing technological and industrial requirements. To cover these needs, new generation machines have to perform monitoring strategies by incorporating multiple sensors. Since in most of applications the online Processing of the variables is essential, the use of smart sensors is necessary. The contribution of this work is the development of a wireless network platform of reconfigurable smart sensors for CNC machine applications complying with the measurement requirements of new generation CNC machines. Four different smart sensors are put under test in the network and their corresponding signal processing techniques are implemented in a Field Programmable Gate Array (FPGA)-based sensor node.
CRYPTOCHROME mediates behavioral executive choice in response to UV light
Baik, Lisa S.; Fogle, Keri J.; Roberts, Logan; Galschiodt, Alexis M.; Chevez, Joshua A.; Recinos, Yocelyn; Nguy, Vinh; Holmes, Todd C.
2017-01-01
Drosophila melanogaster CRYPTOCHROME (CRY) mediates behavioral and electrophysiological responses to blue light coded by circadian and arousal neurons. However, spectroscopic and biochemical assays of heterologously expressed CRY suggest that CRY may mediate functional responses to UV-A (ultraviolet A) light as well. To determine the relative contributions of distinct phototransduction systems, we tested mutants lacking CRY and mutants with disrupted opsin-based phototransduction for behavioral and electrophysiological responses to UV light. CRY and opsin-based external photoreceptor systems cooperate for UV light-evoked acute responses. CRY mediates behavioral avoidance responses related to executive choice, consistent with its expression in central brain neurons. PMID:28062690
Universal programmable quantum circuit schemes to emulate an operator
DOE Office of Scientific and Technical Information (OSTI.GOV)
Daskin, Anmer; Grama, Ananth; Kollias, Giorgos
Unlike fixed designs, programmable circuit designs support an infinite number of operators. The functionality of a programmable circuit can be altered by simply changing the angle values of the rotation gates in the circuit. Here, we present a new quantum circuit design technique resulting in two general programmable circuit schemes. The circuit schemes can be used to simulate any given operator by setting the angle values in the circuit. This provides a fixed circuit design whose angles are determined from the elements of the given matrix-which can be non-unitary-in an efficient way. We also give both the classical and quantummore » complexity analysis for these circuits and show that the circuits require a few classical computations. For the electronic structure simulation on a quantum computer, one has to perform the following steps: prepare the initial wave function of the system; present the evolution operator U=e{sup -iHt} for a given atomic and molecular Hamiltonian H in terms of quantum gates array and apply the phase estimation algorithm to find the energy eigenvalues. Thus, in the circuit model of quantum computing for quantum chemistry, a crucial step is presenting the evolution operator for the atomic and molecular Hamiltonians in terms of quantum gate arrays. Since the presented circuit designs are independent from the matrix decomposition techniques and the global optimization processes used to find quantum circuits for a given operator, high accuracy simulations can be done for the unitary propagators of molecular Hamiltonians on quantum computers. As an example, we show how to build the circuit design for the hydrogen molecule.« less
Image sensor system with bio-inspired efficient coding and adaptation.
Okuno, Hirotsugu; Yagi, Tetsuya
2012-08-01
We designed and implemented an image sensor system equipped with three bio-inspired coding and adaptation strategies: logarithmic transform, local average subtraction, and feedback gain control. The system comprises a field-programmable gate array (FPGA), a resistive network, and active pixel sensors (APS), whose light intensity-voltage characteristics are controllable. The system employs multiple time-varying reset voltage signals for APS in order to realize multiple logarithmic intensity-voltage characteristics, which are controlled so that the entropy of the output image is maximized. The system also employs local average subtraction and gain control in order to obtain images with an appropriate contrast. The local average is calculated by the resistive network instantaneously. The designed system was successfully used to obtain appropriate images of objects that were subjected to large changes in illumination.
System and method for floating-substrate passive voltage contrast
Jenkins, Mark W [Albuquerque, NM; Cole, Jr., Edward I.; Tangyunyong, Paiboon [Albuquerque, NM; Soden, Jerry M [Placitas, NM; Walraven, Jeremy A [Albuquerque, NM; Pimentel, Alejandro A [Albuquerque, NM
2009-04-28
A passive voltage contrast (PVC) system and method are disclosed for analyzing ICs to locate defects and failure mechanisms. During analysis a device side of a semiconductor die containing the IC is maintained in an electrically-floating condition without any ground electrical connection while a charged particle beam is scanned over the device side. Secondary particle emission from the device side of the IC is detected to form an image of device features, including electrical vias connected to transistor gates or to other structures in the IC. A difference in image contrast allows the defects or failure mechanisms be pinpointed. Varying the scan rate can, in some instances, produce an image reversal to facilitate precisely locating the defects or failure mechanisms in the IC. The system and method are useful for failure analysis of ICs formed on substrates (e.g. bulk semiconductor substrates and SOI substrates) and other types of structures.
Toxic effects of combined effects of anthracene and UV radiation on Brachionus plicatilis
NASA Astrophysics Data System (ADS)
Gao, Ceng; Zhang, Xinxin; Xu, Ningning; Tang, Xuexi
2017-05-01
Anthracene is a typical polycyclic aromatic hydrocarbon, with photo activity, can absorb ultraviolet light a series of chemical reactions, aquatic organisms in the ecosystem has a potential light induced toxicity. In this paper, the effects of anthracene and UV radiation on the light-induced toxicity of Brachionus plicatilis were studied. The main methods and experimental results were as follows: (1) The semi-lethal concentration of anthracene in UV light was much lower than that in normal light, The rotifers have significant light-induced acute toxicity. (2) Under UV irradiation, anthracene could induce the increase of ROS and MDA content in B. plicatilis, and the activity of antioxidant enzymes in B. plicatilis significantly changed, Where SOD, GPx activity was induced within 24 hours of the beginning of the experiment. And the content of GPX and CAT was inhibited after 48 hours. Therefore, the anthracite stress induced by UV radiation could more strongly interfere with the ant oxidative metabolism of B. plicatilis, and more seriously cause oxidative damage, significant light-induced toxicity.
Kim, Soo-Ji; Kim, Do-Kyun; Kang, Dong-Hyun
2016-01-01
UVC light is a widely used sterilization technology. However, UV lamps have several limitations, including low activity at refrigeration temperatures, a long warm-up time, and risk of mercury exposure. UV-type lamps only emit light at 254 nm, so as an alternative, UV light-emitting diodes (UV-LEDs) which can produce the desired wavelengths have been developed. In this study, we validated the inactivation efficacy of UV-LEDs by wavelength and compared the results to those of conventional UV lamps. Selective media inoculated with Escherichia coli O157:H7, Salmonella enterica serovar Typhimurium, and Listeria monocytogenes were irradiated using UV-LEDs at 266, 270, 275, and 279 nm in the UVC spectrum at 0.1, 0.2, 0.5, and 0.7 mJ/cm(2), respectively. The radiation intensity of the UV-LEDs was about 4 μW/cm(2), and UV lamps were covered with polypropylene films to adjust the light intensity similar to those of UV-LEDs. In addition, we applied UV-LED to sliced cheese at doses of 1, 2, and 3 mJ/cm(2). Our results showed that inactivation rates after UV-LED treatment were significantly different (P < 0.05) from those of UV lamps at a similar intensity. On microbiological media, UV-LED treatments at 266 and 270 nm showed significantly different (P < 0.05) inactivation effects than other wavelength modules. For sliced cheeses, 4- to 5-log reductions occurred after treatment at 3 mJ/cm(2) for all three pathogens, with negligible generation of injured cells. Copyright © 2015, American Society for Microbiology. All Rights Reserved.
Alkylation Induced DNA Repair and Mutagenesis in Escherichia coli.
1987-11-23
III (Gates and inn, 1977), Micrococcus luteus UV endo- nuclease (Grossman et al, 1978) and bacteriophage T UV endonuclease (Warner et al, 1980) have DNA...34, Garland Publishing, Inc. New York & London USA. Ather, A., Z. Ahmed and S. Riazxxddin, 1984. Adaptive response of Micrococcus luteus to alkylating...Laval, J., 3. Pierre and F. Laval. 1981. Release of 7-nmthylguanine residues frain alkylated ENA by extracts of Micrococcus luteus and Escherichia
Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor
NASA Astrophysics Data System (ADS)
Sihar, Nabihah; Tiong, Teck Yaw; Dee, Chang Fu; Ooi, Poh Choon; Hamzah, Azrul Azlan; Mohamed, Mohd Ambri; Majlis, Burhanuddin Yeop
2018-05-01
We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm2). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.
Ultraviolet Light-Assisted Copper Oxide Nanowires Hydrogen Gas Sensor.
Sihar, Nabihah; Tiong, Teck Yaw; Dee, Chang Fu; Ooi, Poh Choon; Hamzah, Azrul Azlan; Mohamed, Mohd Ambri; Majlis, Burhanuddin Yeop
2018-05-15
We fabricated copper oxide nanowires (CuO NWs) ultraviolet (UV) light-assisted hydrogen gas sensor. The fabricated sensor shows promising sensor response behavior towards 100 ppm of H 2 at room temperature and elevated temperature at 100 °C when exposed to UV light (3.0 mW/cm 2 ). One hundred-cycle device stability test has been performed, and it is found that for sample elevated at 100 °C, the UV-activated sample achieved stability in the first cycle as compared to the sample without UV irradiation which needed about 10 cycles to achieve stability at the initial stage, whereas the sample tested at room temperature was able to stabilize with the aid of UV irradiation. This indicates that with the aid of UV light, after some "warming up" time, it is possible for the conventional CuO NW sensor which normally work at elevated temperature to function at room temperature because UV source is speculated to play a dominant role to increase the interaction of the surface of CuO NWs and hydrogen gas molecules absorbed after the light exposure.
Moran, Patrick J; Wibawa, M Irene; Smith, Lincoln
2017-12-01
Aceria salsolae (Acari: Eriophyidae) is being evaluated as a candidate biological control agent of Russian thistle (Salsola tragus, Chenopodiaceae), a major invasive weed of rangelands and dryland crops in the western USA. Prior laboratory host range testing under artificial lighting indicated reproduction on non-native Bassia hyssopifolia and on a native plant, Suaeda calceoliformis. However, in field tests in the native range, mite populations released on these 'nontarget' plants remained low. We hypothesized that UV-A light, which can affect behavior of tetranychid mites, would affect populations of the eriophyid A. salsolae differently on the target and nontarget plant species, decreasing the mite's realized host range. Plants were infested with A. salsolae under lamps that emitted UV-A, along with broad-spectrum lighting, and the size of mite populations and plant growth was compared to infested plants exposed only to broad-spectrum light. Russian thistle supported 3- to 55-fold larger mite populations than nontarget plants regardless of UV-A treatment. UV-A exposure did not affect mite populations on Russian thistle or S. calceoliformis, whereas it increased populations 7-fold on B. hyssopifolia. Main stems on nontarget plants grew 2- to 6-fold faster than did Russian thistle under either light treatment. The two nontarget plants attained greater volume under the control light regime than UV-A, but Russian thistle was unaffected. Although Russian thistle was always the superior host, addition of UV-A light to the artificial lighting regime did not reduce the ability of A. salsolae to reproduce on the two nontarget species, suggesting that UV-B or other environmental factors may be more important in limiting mite populations in the field.
33 CFR 165.704 - Safety Zone; Tampa Bay, Florida.
Code of Federal Regulations, 2010 CFR
2010-07-01
..., Florida. (a) A floating safety zone is established consisting of an area 1000 yards fore and aft of a... ending at Gadsden Point Cut Lighted Buoys “3” and “4”. The safety zone starts again at Gadsden Point Cut... the marked channel at Tampa Bay Cut “K” buoy “11K” enroute to Rattlesnake, Tampa, FL, the floating...
Improving the color of bulgur: new industrial applications of tempering and UV/sun-light treatments.
Balci, Fatih; Bayram, Mustafa
2015-09-01
Color (CIE b*; yellowness) is an important parameter for bulgur quality. Color of bulgur is mainly due to natural pigments (carotenoids) that are present at different levels in wheat. In order to increase the customer acceptability, the producers try to obtain yellowish color in bulgur. In this study, two different tempering methods (spray and steam) were used before sun and UV- light polishing applications. Sun and UV-light were applied to tempered bulgur for 12, 24, 36, 48, 60 and 72 h. Moisture content (%, d.b.), ash content (%, d.b.), protein content (%, d.b.), total carotenoid content in terms of lutein equivalent (TCC) and color values (CIE L*; lightness, CIE b*; yellowness, CIE a*; redness and CIE YI; yellowness index) were determined. It was found that UV-light was more effective (P < 0.05) on the CIE L* and CIE b* values compared to sunlight. Both tempering methods were significantly (P < 0.05) increased the CIE L*, CIE b* and CIE YI values. Steam tempering has a significant effect (P < 0.05) on the CIE b* values as well as UV and time of UV exposure. The highest value of TCC i.e. 6.31 μg/g was obtained by using spray tempering and UV-light exposure. As a conclusion, as proposed methods steam tempering and UV-light have an obvious positive effect on the color of bulgur.
Designed cell consortia as fragrance-programmable analog-to-digital converters.
Müller, Marius; Ausländer, Simon; Spinnler, Andrea; Ausländer, David; Sikorski, Julian; Folcher, Marc; Fussenegger, Martin
2017-03-01
Synthetic biology advances the rational engineering of mammalian cells to achieve cell-based therapy goals. Synthetic gene networks have nearly reached the complexity of digital electronic circuits and enable single cells to perform programmable arithmetic calculations or to provide dynamic remote control of transgenes through electromagnetic waves. We designed a synthetic multilayered gaseous-fragrance-programmable analog-to-digital converter (ADC) allowing for remote control of digital gene expression with 2-bit AND-, OR- and NOR-gate logic in synchronized cell consortia. The ADC consists of multiple sampling-and-quantization modules sensing analog gaseous fragrance inputs; a gas-to-liquid transducer converting fragrance intensity into diffusible cell-to-cell signaling compounds; a digitization unit with a genetic amplifier circuit to improve the signal-to-noise ratio; and recombinase-based digital expression switches enabling 2-bit processing of logic gates. Synthetic ADCs that can remotely control cellular activities with digital precision may enable the development of novel biosensors and may provide bioelectronic interfaces synchronizing analog metabolic pathways with digital electronics.
Mei, Changtong; Xu, Bing; Chen, Weimin; Yong, Cheng; Wang, Ke; Wu, Qinglin
2018-01-01
Weathering of wood--plastic composites (WPCs) leads to discoloration and cracks, which greatly limits their outdoor application. In this study, light stabilizers (including UV-327, HS-944 and nano-SiO2) were added to the shell of a co-extruded high-density polyethylene-based WPC to improve its anti-ultraviolet (UV) ageing properties and simultaneously to maintain its good mechanical properties. The results showed that UV-327 was the most effective light stabilizer for improving the mechanical and anti-UV ageing properties of the composites among the three stabilizers used. WPC samples combined with 2% UV-327 had the highest retention rates in flexural strength and also had the smoothest surface after 2500 h of UV ageing. The samples with 2% UV-327 added had the best protection for discoloration, showing the lowest values of ΔE* (colour difference) and ΔL* (luminescence) in all samples after 2500 h of UV ageing. WPC samples with 2% UV-327 were also oxidized the least after 2500 h of UV ageing. The results reported herein serve to enhance our understanding of the efficiency of light stabilizers in preventing UV degradation of WPCs, with a view to developing co-extruded WPCs with low cost, high anti-UV ageing properties and good mechanical properties for outdoor applications. PMID:29892445
Xu, Jin; Zhang, Wei; Peng, Meng; Dai, Jiangnan; Chen, Changqing
2018-06-01
The distinct ultraviolet (UV) light absorption of indium tin oxide (ITO) limits the performance of GaN-based near-UV light-emitting diodes (LEDs). Herein, we report an Al-doped ITO with enhanced UV transmittance and low sheet resistance as the transparent conductive electrode for GaN-based 395 nm flip-chip near-UV LEDs. The thickness dependence of optical and electrical properties of Al-doped ITO films is investigated. The optimal Al-doped ITO film exhibited a transmittance of 93.2% at 395 nm and an average sheet resistance of 30.1 Ω/sq. Meanwhile, at an injection current of 300 mA, the forward voltage decreased from 3.14 to 3.11 V, and the light output power increased by 13% for the 395 nm near-UV flip-chip LEDs with the optimal Al-doped ITO over those with pure ITO. This Letter provides a simple and repeatable approach to further improve the light extraction efficiency of GaN-based near-UV LEDs.
2016-01-01
Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p-type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination. PMID:28066690
Hölz, K; Lietard, J; Somoza, M M
2017-01-03
Ultraviolet light emitting diodes (UV LEDs) have become widespread in chemical research as highly efficient light sources for photochemistry and photopolymerization. However, in more complex experimental setups requiring highly concentrated light and highly spatially resolved patterning of the light, high-pressure mercury arc lamps are still widely used because they emit intense UV light from a compact arc volume that can be efficiently coupled into optical systems. Advances in the deposition and p -type doping of gallium nitride have recently permitted the manufacture of UV LEDs capable of replacing mercury arc lamps also in these applications. These UV LEDs exceed the spectral radiance of mercury lamps even at the intense I-line at 365 nm. Here we present the successful exchange of a high-pressure mercury arc lamp for a new generation UV LED as a light source in photolithographic chemistry and its use in the fabrication of high-density DNA microarrays. We show that the improved light radiance and efficiency of these LEDs offer substantial practical, economic and ecological advantages, including faster synthesis, lower hardware costs, very long lifetime, an >85-fold reduction in electricity consumption and the elimination of mercury waste and contamination.
Orbach, Ron; Willner, Bilha; Willner, Itamar
2015-03-11
This feature article addresses the implementation of catalytic nucleic acids as functional units for the construction of logic gates and computing circuits, and discusses the future applications of these systems. The assembly of computational modules composed of DNAzymes has led to the operation of a universal set of logic gates, to field programmable logic gates and computing circuits, to the development of multiplexers/demultiplexers, and to full-adder systems. Also, DNAzyme cascades operating as logic gates and computing circuits were demonstrated. DNAzyme logic systems find important practical applications. These include the use of DNAzyme-based systems for sensing and multiplexed analyses, for the development of controlled release and drug delivery systems, for regulating intracellular biosynthetic pathways, and for the programmed synthesis and operation of cascades.
Nanoeletromechanical switch and logic circuits formed therefrom
Nordquist, Christopher D [Albuquerque, NM; Czaplewski, David A [Albuquerque, NM
2010-05-18
A nanoelectromechanical (NEM) switch is formed on a substrate with a source electrode containing a suspended electrically-conductive beam which is anchored to the substrate at each end. This beam, which can be formed of ruthenium, bows laterally in response to a voltage applied between a pair of gate electrodes and the source electrode to form an electrical connection between the source electrode and a drain electrode located near a midpoint of the beam. Another pair of gate electrodes and another drain electrode can be located on an opposite side of the beam to allow for switching in an opposite direction. The NEM switch can be used to form digital logic circuits including NAND gates, NOR gates, programmable logic gates, and SRAM and DRAM memory cells which can be used in place of conventional CMOS circuits, or in combination therewith.
NASA Astrophysics Data System (ADS)
Petrović, Sanja; Zvezdanović, Jelena; Marković, Dejan
2017-12-01
Irreversible chlorophyll degradation induced by continuous white light illumination and UV-B irradiation in the aqueous mediums (with 10%, 30% and 50% of methanol) was investigated using the ultrahigh liquid chromatography coupled with diode array and electrospray ionization mass spectrometry detectors (UHPLC-DAD-ESIMS). The degradation was governed by energy input of photons: higher energy of UV-B irradiation induced faster chlorophyll degradation and accordingly faster products formation in comparison to the white light treatment. Main light- or/and UV-B-induced products of chlorophyll in the aqueous mediums were hydroxy-pheophytin a, pheophytin a and hydroxy-lactone-pheophytin a, accompanied with the corresponding epimers. Chlorophylls aggregation dominant in the aqueous medium with the highest methanol content (50%) play a protective role against the UV-B radiation and white light illumination.
NASA Astrophysics Data System (ADS)
Choi, Jinhyeon; Lee, Hee Ho; Ahn, Jungil; Seo, Sang-Ho; Shin, Jang-Kyoo
2012-06-01
In this paper, we present a differential-mode biosensor using dual extended-gate metal-oxide-semiconductor field-effect transistors (MOSFETs), which possesses the advantages of both the extended-gate structure and the differential-mode operation. The extended-gate MOSFET was fabricated using a 0.6 µm standard complementary metal oxide semiconductor (CMOS) process. The Au extended gate is the sensing gate on which biomolecules are immobilized, while the Pt extended gate is the dummy gate for use in the differential-mode detection circuit. The differential-mode operation offers many advantages such as insensitivity to the variation of temperature and light, as well as low noise. The outputs were measured using a semiconductor parameter analyzer in a phosphate buffered saline (PBS; pH 7.4) solution. A standard Ag/AgCl reference electrode was used to apply the gate bias. We measured the variation of output voltage with time, temperature, and light intensity. The bindings of self-assembled monolayer (SAM), streptavidin, and biotin caused a variation in the output voltage of the differential-mode detection circuit and this was confirmed by surface plasmon resonance (SPR) experiment. Biotin molecules could be detected up to a concentration of as low as 0.001 µg/ml.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Okuno, T., E-mail: t093507@edu.imc.tut.ac.jp; Kawamura, G., E-mail: gokawamura@ee.tut.ac.jp; Muto, H., E-mail: muto@ee.tut.ac.jp
Mesoporous SiO{sub 2} templates deposited TiO{sub 2} nanocrystals are synthesized via a sol–gel route, and Au nanoparticles (NPs) are deposited in the tubular mesopores of the templates by a photodeposition method (Au/SiO{sub 2}–TiO{sub 2}). The photocatalytic characteristics of Au/SiO{sub 2}–TiO{sub 2} are discussed with the action spectra of photoreactions of 2-propanol and methylene blue. Photocatalytic activities of SiO{sub 2}–TiO{sub 2} under individual ultraviolet (UV) and visible (Vis) light illumination are enhanced by deposition of Au NPs. Furthermore, Au/SiO{sub 2}–TiO{sub 2} shows higher photocatalytic activities under simultaneous irradiation of UV and Vis light compared to the activity under individual UV andmore » Vis light irradiation. Since the photocatalytic activity under simultaneous irradiation is almost the same as the total activities under individual UV and Vis light irradiation, it is concluded that the electrons and the holes generated by lights of different wavelengths are efficiently used for photocatalysis without carrier recombination. - Graphical abstract: This graphic shows the possible charge behavior in Au/SiO{sub 2}–TiO{sub 2} under independent light irradiation of ultraviolet and visible light irradiation. Both reactions under independent UV and Vis light irradiation occurred in parallel when Au/SiO{sub 2}–TiO{sub 2} photocatalyst was illuminated UV and Vis light simultaneously, and then photocatalytic activity is improved by simultaneous irradiation. - Highlights: • Au nanoparticles were deposited in mesoporous SiO{sub 2}–TiO{sub 2} by a photodeposition method. • Photocatalytic activity under UV and Vis light was enhanced by deposition of Au. • Photocatalytic activity of Au/SiO{sub 2}–TiO{sub 2} was improved by simultaneous irradiation.« less
UBAT of UFFO/ Lomonosov: The X-Ray Space Telescope to Observe Early Photons from Gamma-Ray Bursts
NASA Astrophysics Data System (ADS)
Jeong, S.; Panasyuk, M. I.; Reglero, V.; Connell, P.; Kim, M. B.; Lee, J.; Rodrigo, J. M.; Ripa, J.; Eyles, C.; Lim, H.; Gaikov, G.; Jeong, H.; Leonov, V.; Chen, P.; Castro-Tirado, A. J.; Nam, J. W.; Svertilov, S.; Yashin, I.; Garipov, G.; Huang, M.-H. A.; Huang, J.-J.; Kim, J. E.; Liu, T.-C.; Petrov, V.; Bogomolov, V.; Budtz-Jørgensen, C.; Brandt, S.; Park, I. H.
2018-02-01
The Ultra-Fast Flash Observatory (UFFO) Burst Alert and Trigger Telescope (UBAT) has been designed and built for the localization of transient X-ray sources such as Gamma Ray Bursts (GRBs). As one of main instruments in the UFFO payload onboard the Lomonosov satellite (hereafter UFFO/ Lomonosov), the UBAT's roles are to monitor the X-ray sky, to rapidly locate and track transient sources, and to trigger the slewing of a UV/optical telescope, namely Slewing Mirror Telescope (SMT). The SMT, a pioneering application of rapid slewing mirror technology has a line of sight parallel to the UBAT, allowing us to measure the early UV/optical GRB counterpart and study the extremely early moments of GRB evolution. To detect X-rays, the UBAT utilizes a 191.1 cm2 scintillation detector composed of Yttrium Oxyorthosilicate (YSO) crystals, Multi-Anode Photomultiplier Tubes (MAPMTs), and associated electronics. To estimate a direction vector of a GRB source in its field of view, it employs the well-known coded aperture mask technique. All functions are written for implementation on a field programmable gate array to enable fast triggering and to run the device's imaging algorithms. The UFFO/ Lomonosov satellite was launched on April 28, 2016, and is now collecting GRB observation data. In this study, we describe the UBAT's design, fabrication, integration, and performance as a GRB X-ray trigger and localization telescope, both on the ground and in space.
2016-03-31
The SiGe receiver has two stages of programmable RF filtering and one stage of IF filtering. Each filter can be tuned in center frequency and...distribution unlimited. transmit, with an IF to RF upconversion chain that is split to programmable phase shifters and VGAs at each output port. Figure 2...These are optimized to run on medium grade Field Programmable Gate Arrays (FPGAs), such as the Altera Arria 10, and represent a few of the many
NASA Astrophysics Data System (ADS)
Omairi, Tareq; Wainwright, Milton
2015-07-01
We propose that green algae (Chlorella variabilis and Dunaliella tertiolecta) and cyanobacteria (Synechococcus elongatus and Nostoc commune) can grow inside fluorescent rock minerals which convert damaging UV light to visible light, thereby allowing these organisms to survive and thrive in UV-rich environments without (or with limited) visible light, which would otherwise be inimical to them. The four microorganisms were incubated inside fluorescent rocks composed of fluorite, calcite and pyrite. The resultant growth was then measured following exposure to UV radiation, with the use of optical density and measurement of chlorophyll concentration. Results show that the microorganisms were shielded from harmful UV in these semi-transparent rocks, while at the same time benefiting from the fact that the minerals converted UV to visible light; this have been shown by a statistically significant increase in their growth, which although lower than when the cells were incubated in sunlight, was significantly higher than in controls incubated in the dark.
UV Degradation and Recovery of Perovskite Solar Cells
Lee, Sang-Won; Kim, Seongtak; Bae, Soohyun; Cho, Kyungjin; Chung, Taewon; Mundt, Laura E.; Lee, Seunghun; Park, Sungeun; Park, Hyomin; Schubert, Martin C.; Glunz, Stefan W.; Ko, Yohan; Jun, Yongseok; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan
2016-01-01
Although the power conversion efficiency of perovskite solar cells has increased from 3.81% to 22.1% in just 7 years, they still suffer from stability issues, as they degrade upon exposure to moisture, UV light, heat, and bias voltage. We herein examined the degradation of perovskite solar cells in the presence of UV light alone. The cells were exposed to 365 nm UV light for over 1,000 h under inert gas at <0.5 ppm humidity without encapsulation. 1-sun illumination after UV degradation resulted in recovery of the fill factor and power conversion efficiency. Furthermore, during exposure to consecutive UV light, the diminished short circuit current density (Jsc) and EQE continuously restored. 1-sun light soaking induced recovery is considered to be caused by resolving of stacked charges and defect state neutralization. The Jsc and EQE bounce-back phenomenon is attributed to the beneficial effects of PbI2 which is generated by the decomposition of perovskite material. PMID:27909338
Enhancing the Photovoltaic Performance of Perovskite Solar Cells with a Down-Conversion Eu-Complex.
Jiang, Ling; Chen, Wangchao; Zheng, Jiawei; Zhu, Liangzheng; Mo, Li'e; Li, Zhaoqian; Hu, Linhua; Hayat, Tasawar; Alsaedi, Ahmed; Zhang, Changneng; Dai, Songyuan
2017-08-16
Organometal halide perovskite solar cells (PSCs) have shown high photovoltaic performance but poor utilization of ultraviolet (UV) irradiation. Lanthanide complexes have a wide absorption range in the UV region and they can down-convert the absorbed UV light into visible light, which provides a possibility for PSCs to utilize UV light for higher photocurrent, efficiency, and stability. In this study, we use a transparent luminescent down-converting layer (LDL) of Eu-4,7-diphenyl-1,10-phenanthroline (Eu-complex) to improve the light utilization efficiency of PSCs. Compared with the uncoated PSC, the PSC coated with Eu-complex LDL on the reverse of the fluorine-doped tin oxide glass displayed an enhancement of 11.8% in short-circuit current density (J sc ) and 15.3% in efficiency due to the Eu-complex LDL re-emitting UV light (300-380 nm) in the visible range. It is indicated that the Eu-complex LDL plays the role of enhancing the power conversion efficiency as well as reducing UV degradation for PSCs.
UV Degradation and Recovery of Perovskite Solar Cells.
Lee, Sang-Won; Kim, Seongtak; Bae, Soohyun; Cho, Kyungjin; Chung, Taewon; Mundt, Laura E; Lee, Seunghun; Park, Sungeun; Park, Hyomin; Schubert, Martin C; Glunz, Stefan W; Ko, Yohan; Jun, Yongseok; Kang, Yoonmook; Lee, Hae-Seok; Kim, Donghwan
2016-12-02
Although the power conversion efficiency of perovskite solar cells has increased from 3.81% to 22.1% in just 7 years, they still suffer from stability issues, as they degrade upon exposure to moisture, UV light, heat, and bias voltage. We herein examined the degradation of perovskite solar cells in the presence of UV light alone. The cells were exposed to 365 nm UV light for over 1,000 h under inert gas at <0.5 ppm humidity without encapsulation. 1-sun illumination after UV degradation resulted in recovery of the fill factor and power conversion efficiency. Furthermore, during exposure to consecutive UV light, the diminished short circuit current density (J sc ) and EQE continuously restored. 1-sun light soaking induced recovery is considered to be caused by resolving of stacked charges and defect state neutralization. The J sc and EQE bounce-back phenomenon is attributed to the beneficial effects of PbI 2 which is generated by the decomposition of perovskite material.
Correia, Manuel; Neves-Petersen, Maria Teresa; Jeppesen, Per Bendix; Gregersen, Søren; Petersen, Steffen B.
2012-01-01
In this work we report the effects of continuous UV-light (276 nm, ∼2.20 W.m−2) excitation of human insulin on its absorption and fluorescence properties, structure and functionality. Continuous UV-excitation of the peptide hormone in solution leads to the progressive formation of tyrosine photo-product dityrosine, formed upon tyrosine radical cross-linkage. Absorbance, fluorescence emission and excitation data confirm dityrosine formation, leading to covalent insulin dimerization. Furthermore, UV-excitation of insulin induces disulphide bridge breakage. Near- and far-UV-CD spectroscopy shows that UV-excitation of insulin induces secondary and tertiary structure losses. In native insulin, the A and B chains are held together by two disulphide bridges. Disruption of either of these bonds is likely to affect insulin’s structure. The UV-light induced structural changes impair its antibody binding capability and in vitro hormonal function. After 1.5 and 3.5 h of 276 nm excitation there is a 33.7% and 62.1% decrease in concentration of insulin recognized by guinea pig anti-insulin antibodies, respectively. Glucose uptake by human skeletal muscle cells decreases 61.7% when the cells are incubated with pre UV-illuminated insulin during 1.5 h. The observations presented in this work highlight the importance of protecting insulin and other drugs from UV-light exposure, which is of outmost relevance to the pharmaceutical industry. Several drug formulations containing insulin in hexameric, dimeric and monomeric forms can be exposed to natural and artificial UV-light during their production, packaging, storage or administration phases. We can estimate that direct long-term exposure of insulin to sunlight and common light sources for indoors lighting and UV-sterilization in industries can be sufficient to induce irreversible changes to human insulin structure. Routine fluorescence and absorption measurements in laboratory experiments may also induce changes in protein structure. Structural damage includes insulin dimerization via dityrosine cross-linking or disulphide bond disruption, which affects the hormone’s structure and bioactivity. PMID:23227203
Correia, Manuel; Neves-Petersen, Maria Teresa; Jeppesen, Per Bendix; Gregersen, Søren; Petersen, Steffen B
2012-01-01
In this work we report the effects of continuous UV-light (276 nm, ~2.20 W.m(-2)) excitation of human insulin on its absorption and fluorescence properties, structure and functionality. Continuous UV-excitation of the peptide hormone in solution leads to the progressive formation of tyrosine photo-product dityrosine, formed upon tyrosine radical cross-linkage. Absorbance, fluorescence emission and excitation data confirm dityrosine formation, leading to covalent insulin dimerization. Furthermore, UV-excitation of insulin induces disulphide bridge breakage. Near- and far-UV-CD spectroscopy shows that UV-excitation of insulin induces secondary and tertiary structure losses. In native insulin, the A and B chains are held together by two disulphide bridges. Disruption of either of these bonds is likely to affect insulin's structure. The UV-light induced structural changes impair its antibody binding capability and in vitro hormonal function. After 1.5 and 3.5 h of 276 nm excitation there is a 33.7% and 62.1% decrease in concentration of insulin recognized by guinea pig anti-insulin antibodies, respectively. Glucose uptake by human skeletal muscle cells decreases 61.7% when the cells are incubated with pre UV-illuminated insulin during 1.5 h. The observations presented in this work highlight the importance of protecting insulin and other drugs from UV-light exposure, which is of outmost relevance to the pharmaceutical industry. Several drug formulations containing insulin in hexameric, dimeric and monomeric forms can be exposed to natural and artificial UV-light during their production, packaging, storage or administration phases. We can estimate that direct long-term exposure of insulin to sunlight and common light sources for indoors lighting and UV-sterilization in industries can be sufficient to induce irreversible changes to human insulin structure. Routine fluorescence and absorption measurements in laboratory experiments may also induce changes in protein structure. Structural damage includes insulin dimerization via dityrosine cross-linking or disulphide bond disruption, which affects the hormone's structure and bioactivity.
SONOS Nonvolatile Memory Cell Programming Characteristics
NASA Technical Reports Server (NTRS)
MacLeod, Todd C.; Phillips, Thomas A.; Ho, Fat D.
2010-01-01
Silicon-oxide-nitride-oxide-silicon (SONOS) nonvolatile memory is gaining favor over conventional EEPROM FLASH memory technology. This paper characterizes the SONOS write operation using a nonquasi-static MOSFET model. This includes floating gate charge and voltage characteristics as well as tunneling current, voltage threshold and drain current characterization. The characterization of the SONOS memory cell predicted by the model closely agrees with experimental data obtained from actual SONOS memory cells. The tunnel current, drain current, threshold voltage and read drain current all closely agreed with empirical data.
An Investigation of Singapore Preschool Children's Emerging Concepts of Floating and Sinking
ERIC Educational Resources Information Center
Teo, Tang Wee; Yan, Yaw Kai; Ong, Woei Ling Monica
2017-01-01
Despite Singapore's excellent science achievements in international benchmark tests such as the Trends in International Mathematics and Science Study (TIMSS) and Programme for International Student Assessment (PISA), little is known about Singaporean children's (aged 4-8) emerging science conceptions as formal science schooling begins at Grade 3…
Chaplin, J C; Russell, N A; Krasnogor, N
2012-07-01
In this paper we detail experimental methods to implement registers, logic gates and logic circuits using populations of photochromic molecules exposed to sequences of light pulses. Photochromic molecules are molecules with two or more stable states that can be switched reversibly between states by illuminating with appropriate wavelengths of radiation. Registers are implemented by using the concentration of molecules in each state in a given sample to represent an integer value. The register's value can then be read using the intensity of a fluorescence signal from the sample. Logic gates have been implemented using a register with inputs in the form of light pulses to implement 1-input/1-output and 2-input/1-output logic gates. A proof of concept logic circuit is also demonstrated; coupled with the software workflow describe the transition from a circuit design to the corresponding sequence of light pulses. Copyright © 2012 Elsevier Ireland Ltd. All rights reserved.
Programmable Pulse-Position-Modulation Encoder
NASA Technical Reports Server (NTRS)
Zhu, David; Farr, William
2006-01-01
A programmable pulse-position-modulation (PPM) encoder has been designed for use in testing an optical communication link. The encoder includes a programmable state machine and an electronic code book that can be updated to accommodate different PPM coding schemes. The encoder includes a field-programmable gate array (FPGA) that is programmed to step through the stored state machine and code book and that drives a custom high-speed serializer circuit board that is capable of generating subnanosecond pulses. The stored state machine and code book can be updated by means of a simple text interface through the serial port of a personal computer.
UV emissions from low energy artificial light sources.
Fenton, Leona; Moseley, Harry
2014-01-01
Energy efficient light sources have been introduced across Europe and many other countries world wide. The most common of these is the Compact Fluorescent Lamp (CFL), which has been shown to emit ultraviolet (UV) radiation. Light Emitting Diodes (LEDs) are an alternative technology that has minimal UV emissions. This brief review summarises the different energy efficient light sources available on the market and compares the UV levels and the subsequent effects on the skin of normal individuals and those who suffer from photodermatoses. © 2013 John Wiley & Sons A/S. Published by John Wiley & Sons Ltd.