Fabrication process for polymer PLC platforms with V-grooves for passive alignment
NASA Astrophysics Data System (ADS)
Park, Suntak; Lee, Jong-Moo; Ahn, Joon Tae; Baek, Yong-Soon
2005-12-01
A method for polymer planar lightwave circuit (PLC) devices fabricated on a substrate with V-grooves is developed for passive alignment of an optical fiber to a polymer waveguide. In order to minimize thickness nonuniformity of polymer layers caused by the V-grooves, dry film resist (DFR) is used. The V-grooves are covered with the DFR before the polymer layers are spin-coated on the substrate. The DFR prevents the polymer from being filled in the V-grooves as well as from being spin-coated nonuniformly on the substrate. This process provides a simple and cost-effective fabrication method of polymer PLCs or platforms for passive alignment.
Wafer scale BN on sapphire substrates for improved graphene transport.
Vangala, Shivashankar; Siegel, Gene; Prusnick, Timothy; Snure, Michael
2018-06-11
Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO 2 /Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.
NASA Astrophysics Data System (ADS)
Liu, Manyu; Hu, Youwang; Sun, Xiaoyan; Wang, Cong; Zhou, Jianying; Dong, Xinran; Yin, Kai; Chu, Dongkai; Duan, Ji'an
2017-01-01
Sapphire, with extremely high hardness, high-temperature stability and wear resistance, often corroded in molten KOH at 300 °C after processing. The fabrication of microstructures on sapphire substrate performed by femtosecond laser irradiation combined with KOH solution chemical etching at room temperature is presented. It is found that this method reduces the harsh requirements of sapphire corrosion. After femtosecond irradiation, the sapphire has a high corrosion speed at room temperature. Through the analysis of Raman spectrum and XRD spectrum, a novel insight of femtosecond laser interaction with sapphire (α-Al2O3) is proposed. Results indicated that grooves on sapphire surface were formed by the lasers ablation removal, and the groove surface was modified in a certain depth. The modified area of the groove surface was changed from α-Al2O3 to γ-Al2O3. In addition, the impacts of three experimental parameters, laser power, scanning velocities and etching time, on the width and depth of microstructures are investigated, respectively. The modified area dimension is about 2 μm within limits power and speed. This work could fabricate high-quality arbitrary microstructures and enhance the performance of sapphire processing.
Controllable laser thermal cleavage of sapphire wafers
NASA Astrophysics Data System (ADS)
Xu, Jiayu; Hu, Hong; Zhuang, Changhui; Ma, Guodong; Han, Junlong; Lei, Yulin
2018-03-01
Laser processing of substrates for light-emitting diodes (LEDs) offers advantages over other processing techniques and is therefore an active research area in both industrial and academic sectors. The processing of sapphire wafers is problematic because sapphire is a hard and brittle material. Semiconductor laser scribing processing suffers certain disadvantages that have yet to be overcome, thereby necessitating further investigation. In this work, a platform for controllable laser thermal cleavage was constructed. A sapphire LED wafer was modeled using the finite element method to simulate the thermal and stress distributions under different conditions. A guide groove cut by laser ablation before the cleavage process was observed to guide the crack extension and avoid deviation. The surface and cross section of sapphire wafers processed using controllable laser thermal cleavage were characterized by scanning electron microscopy and optical microscopy, and their morphology was compared to that of wafers processed using stealth dicing. The differences in luminous efficiency between substrates prepared using these two processing methods are explained.
Properties of GaN grown on sapphire substrates
NASA Technical Reports Server (NTRS)
Crouch, R. K.; Debnam, W. J.; Fripp, A. L.
1978-01-01
Epitaxial growth of GaN on sapphire substrates using an open-tube growth furnace has been carried out to study the effects of substrate orientation and transfer gas upon the properties of the layers. It has been found that for the (0001) substrates, surface appearance was virtually independent of carrier gas and of doping levels. For the (1(-1)02) substrates surface faceting was greatly reduced when He was used as a transfer gas as opposed to H2. Faceting was also reduced when the GaN was doped with Zn, and the best surfaces for the (1(-1)02) substrates were obtained in a Zn-doped run using He as the transfer gas. The best sample in terms of electrical properties for the (1(-1)02) substrate had a mobility greater than 400 sq cm/V per sec and a carrier concentration of about 10 to the 17th per cu cm. This sample was undoped and used He as the transfer gas. The best (0001) sample was also grown undoped with He as the transfer gas and had a mobility of 300 sq cm/V per sec and a carrier concentration of 1 x 10 to the 18th per cu cm.
NASA Astrophysics Data System (ADS)
Dongxue, Wu; Ping, Ma; Boting, Liu; Shuo, Zhang; Junxi, Wang; Jinmin, Li
2016-10-01
The effect of patterned sapphire substrate (PSS) on the top-surface (P-GaN-surface) and the bottom-surface (sapphire-surface) of the light output power (LOP) of GaN-based LEDs was investigated, in order to study the changes in reflection and transmission of the GaN-sapphire interface. Experimental research and computer simulations were combined to reveal a great enhancement in LOP from either the top or bottom surface of GaN-based LEDs, which are prepared on patterned sapphire substrates (PSS-LEDs). Furthermore, the results were compared to those of the conventional LEDs prepared on the planar sapphire substrates (CSS-LEDs). A detailed theoretical analysis was also presented to further support the explanation for the increase in both the effective reflection and transmission of PSS-GaN interface layers and to explain the causes of increased LOP values. Moreover, the bottom-surface of the PSS-LED chip shows slightly increased light output performance when compared to that of the top-surface. Therefore, the light extraction efficiency (LEE) can be further enhanced by integrating the method of PSS and flip-chip structure design. Project supported by the National High Technology Program of China (No. Y48A040000) and the National High Technology Program of China (No. Y48A040000).
Characteristics of surface acoustic waves in (11\\bar 2 0)ZnO film/ R-sapphire substrate structures
NASA Astrophysics Data System (ADS)
Wang, Yan; Zhang, ShuYi; Xu, Jing; Xie, YingCai; Lan, XiaoDong
2018-02-01
(11\\bar 2 0)ZnO film/ R-sapphire substrate structure is promising for high frequency acoustic wave devices. The propagation characteristics of SAWs, including the Rayleigh waves along [0001] direction and Love waves along [1ī00] direction, are investigated by using 3 dimensional finite element method (3D-FEM). The phase velocity ( v p), electromechanical coupling coefficient ( k 2), temperature coefficient of frequency ( TCF) and reflection coefficient ( r) of Rayleigh wave and Love wave devices are theoretically analyzed. Furthermore, the influences of ZnO films with different crystal orientation on SAW properties are also investigated. The results show that the 1st Rayleigh wave has an exceedingly large k 2 of 4.95% in (90°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate associated with a phase velocity of 5300 m/s; and the 0th Love wave in (0°, 90°, 0°) (11\\bar 2 0)ZnO film/ R-sapphire substrate has a maximum k 2 of 3.86% associated with a phase velocity of 3400 m/s. And (11\\bar 2 0)ZnO film/ R-sapphire substrate structures can be used to design temperature-compensated and wide-band SAW devices. All of the results indicate that the performances of SAW devices can be optimized by suitably selecting ZnO films with different thickness and crystal orientations deposited on R-sapphire substrates.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Voronenkov, V. V.; Virko, M. V.; Kogotkov, V. S.
The intense absorption of CO{sub 2} laser radiation in sapphire is used to separate GaN films from GaN templates on sapphire. Scanning of the sapphire substrate by the laser leads to the thermal dissociation of GaN at the GaN/sapphire interface and to the detachment of GaN films from the sapphire. The threshold density of the laser energy at which n-GaN started to dissociate is 1.6 ± 0.5 J/cm{sup 2}. The mechanical-stress distribution and the surface morphology of GaN films and sapphire substrates before and after laser lift-off are studied by Raman spectroscopy, atomic-force microscopy, and scanning electron microscopy. A verticalmore » Schottky diode with a forward current density of 100 A/cm{sup 2} at a voltage of 2 V and a maximum reverse voltage of 150 V is fabricated on the basis of a 9-μm-thick detached n-GaN film.« less
GaN grown on nano-patterned sapphire substrates
NASA Astrophysics Data System (ADS)
Jing, Kong; Meixin, Feng; Jin, Cai; Hui, Wang; Huaibing, Wang; Hui, Yang
2015-04-01
High-quality gallium nitride (GaN) film was grown on nano-patterned sapphire substrates (NPSS) and investigated using XRD and SEM. It was found that the optimum thickness of the GaN buffer layer on the NPSS is 15 nm, which is thinner than that on micro-patterned sapphire substrates (MPSS). An interesting phenomenon was observed for GaN film grown on NPSS:GaN mainly grows on the trench regions and little grows on the sidewalls of the patterns at the initial growth stage, which is dramatically different from GaN grown on MPSS. In addition, the electrical and optical properties of LEDs grown on NPSS were characterized. Project supported by the Suzhou Nanojoin Photonics Co., Ltd and the High-Tech Achievements Transformation of Jiangsu Province, China (No.BA2012010).
Towards rhombohedral SiGe epitaxy on 150mm c-plane sapphire substrates
NASA Astrophysics Data System (ADS)
Duzik, Adam J.; Park, Yeonjoon; Choi, Sang H.
2015-04-01
Previous work demonstrated for the first time the ability to epitaxially grow uniform single crystal diamond cubic SiGe (111) films on trigonal sapphire (0001) substrates. While SiGe (111) forms two possible crystallographic twins on sapphire (0001), films consisting primarily of one twin were produced on up to 99.95% of the total wafer area. This permits new bandgap engineering possibilities and improved group IV based devices that can exploit the higher carrier mobility in Ge compared to Si. Models are proposed on the epitaxy of such dissimilar crystal structures based on the energetic favorability of crystallographic twins and surface reconstructions. This new method permits Ge (111) on sapphire (0001) epitaxy, rendering Ge an economically feasible replacement for Si in some applications, including higher efficiency Si/Ge/Si quantum well solar cells. Epitaxial SiGe films on sapphire showed a 280% increase in electron mobility and a 500% increase in hole mobility over single crystal Si. Moreover, Ge possesses a wider bandgap for solar spectrum conversion than Si, while the transparent sapphire substrate permits an inverted device structure, increasing the total efficiency to an estimated 30-40%, much higher than traditional Si solar cells. Hall Effect mobility measurements of the Ge layer in the Si/Ge/Si quantum well structure were performed to demonstrate the advantage in carrier mobility over a pure Si solar cell. Another application comes in the use of microelectromechanical devices technology, where high-resistivity Si is currently used as a substrate. Sapphire is a more resistive substrate and offers better performance via lower parasitic capacitance and higher film carrier mobility over the current Si-based technology.
Defect analysis of the LED structure deposited on the sapphire substrate
NASA Astrophysics Data System (ADS)
Nie, Qichu; Jiang, Zhimin; Gan, Zhiyin; Liu, Sheng; Yan, Han; Fang, Haisheng
2018-04-01
Transmission electron microscope (TEM) and double-crystal X-ray diffraction (DCXRD) measurements have been performed to investigate dislocations of the whole structure of the LED layers deposited on both the conventional (unpatterned sapphire substrate, UPSS) and patterned sapphire substrates (PSS). TEM results show that there exists a dislocation-accumulated region near the substrate/GaN interface, where the dislocation density is much higher with the UPPS than that with the PSS. It indicates that the pattern on the substrate surface is able to block the formation and propagation of dislocations. Further analysis discloses that slope of the pattern is found to suppress the deposition of GaN, and thus to provide more spaces for the epitaxially lateral overgrowth (ELO) of high temperature GaN, which significantly reduces the number of the initial islands, and minimizes dislocation formation due to the island coalescence. V-defect incorporating the threading dislocation is detected in the InGaN/GaN multi-quantum wells (MQWs), and its propagation mechanism is determined as the decrease of the surface energy due to the incorporation of indium. In addition, temperature dependence of dislocation formation is further investigated. The results show that dislocation with the screw component decreases monotonously as temperature goes up. However, edge dislocation firstly drops, and then increases by temperature due to the enhanced thermal mismatch stress. It implies that an optimized range of the growth temperature can be obtained to improve quality of the LED layers.
NASA Astrophysics Data System (ADS)
Xuan, Ming-dong; Dai, Long-gui; Jia, Hai-qiang; Chen, Hong
2014-01-01
Periodic triangle truncated pyramid arrays are successfully fabricated on the sapphire substrate by a low-cost and high-efficiency laser interference lithography (LIL) system. Through the combination of dry etching and wet etching techniques, the nano-scale patterned sapphire substrate (NPSS) with uniform size is prepared. The period of the patterns is 460 nm as designed to match the wavelength of blue light emitting diode (LED). By improving the stability of the LIL system and optimizing the process parameters, well-defined triangle truncated pyramid arrays can be achieved on the sapphire substrate with diameter of 50.8 mm. The deviation of the bottom width of the triangle truncated pyramid arrays is 6.8%, which is close to the industrial production level of 3%.
One-dimensional arrangement of nanoparticles utilizing the V-groove and cage shaped proteins
NASA Astrophysics Data System (ADS)
Ban, Takahiko; Uenuma, Mutsunori; Migita, Shinji; Okamoto, Naofumi; Ishikawa, Yasuaki; Uraoka, Yukiharu; Yamashita, Ichiro; Yamamoto, Shin-ichi
2017-06-01
The one-dimensional arrangement of nanoparticles (NPs) was performed using a V-groove and ferritins as spherical shell proteins. The V-groove was synthesized by lithography and anisotropic etching of a Si substrate. Ferritin has an outer diameter of 12 nm and an inner diameter of 6 nm, and various inorganic substances can be formed into the cavity. In this study, iron oxide, cobalt oxide, and indium oxide cores were used. The surface potential of ferritin can be changed by genetic modification. Particularly, by using Fer8-K98E, NPs could be arranged one-dimensionally onto the bottom of the V-groove. In addition, we succeeded in selectively forming a one-dimensional array of one layer, two layers, and three layers by changing the protein concentration. This experiment is expected to be applicable to various one-dimensional devices.
Lattice-Matched Semiconductor Layers on Single Crystalline Sapphire Substrate
NASA Technical Reports Server (NTRS)
Choi, Sang; King, Glen; Park, Yeonjoon
2009-01-01
SiGe is an important semiconductor alloy for high-speed field effect transistors (FETs), high-temperature thermoelectric devices, photovoltaic solar cells, and photon detectors. The growth of SiGe layer is difficult because SiGe alloys have different lattice constants from those of the common Si wafers, which leads to a high density of defects, including dislocations, micro-twins, cracks, and delaminations. This innovation utilizes newly developed rhombohedral epitaxy of cubic semiconductors on trigonal substrates in order to solve the lattice mismatch problem of SiGe by using trigonal single crystals like sapphire (Al2O3) as substrate to give a unique growth-orientation to the SiGe layer, which is automatically controlled at the interface upon sapphire (0001). This technology is different from previous silicon on insulator (SOI) or SGOI (SiGe on insulator) technologies that use amorphous SiO2 as the growth plane. A cubic semiconductor crystal is a special case of a rhombohedron with the inter-planar angle, alpha = 90 deg. With a mathematical transformation, all rhombohedrons can be described by trigonal crystal lattice structures. Therefore, all cubic lattice constants and crystal planes (hkl) s can be transformed into those of trigonal crystal parameters. These unique alignments enable a new opportunity of perfect lattice matching conditions, which can eliminate misfit dislocations. Previously, these atomic alignments were thought to be impossible or very difficult. With the invention of a new x-ray diffraction measurement method here, growth of cubic semiconductors on trigonal crystals became possible. This epitaxy and lattice-matching condition can be applied not only to SiGe (111)/sapphire (0001) substrate relations, but also to other crystal structures and other materials, including similar crystal structures which have pointgroup rotational symmetries by 120 because the cubic (111) direction has 120 rotational symmetry. The use of slightly miscut (less than
Microdynamic Devices Fabricated on Silicon-On-Sapphire Substrates.
Silicon-on-sapphire substrates are provided for the fabrication of micromechanical devices, such as micromotors . The high voltage stand-off...a consequence, the electrostatically driven devices, micromotors , can be incorporated in the integrated circuits and yet be powered at elevated voltages to increase their work potential.
NASA Astrophysics Data System (ADS)
Park, Byung-Guon; Saravana Kumar, R.; Moon, Mee-Lim; Kim, Moon-Deock; Kang, Tae-Won; Yang, Woo-Chul; Kim, Song-Gang
2015-09-01
We demonstrate the evolution of GaN films on novel langasite (LGS) substrate by plasma-assisted molecular beam epitaxy, and assessed the quality of grown GaN film by comparing the experimental results obtained using LGS, sapphire and silicon (Si) substrates. To study the substrate effect, X-ray diffraction (XRD), scanning electron microscopy (SEM), Raman spectroscopy and photoluminescence (PL) spectra were used to characterize the microstructure and stress states in GaN films. Wet etching of GaN films in KOH solution revealed that the films deposited on GaN/LGS, AlN/sapphire and AlN/Si substrates possess Ga-polarity, while the film deposited on GaN/sapphire possess N-polarity. XRD, Raman and PL analysis demonstrated that a compressive stress exist in the films grown on GaN/LGS, AlN/sapphire, and GaN/sapphire substrates, while a tensile stress appears on AlN/Si substrate. Comparative analysis showed the growth of nearly stress-free GaN films on LGS substrate due to the very small lattice mismatch ( 3.2%) and thermal expansion coefficient difference ( 7.5%). The results presented here will hopefully provide a new framework for the further development of high performance III-nitride-related devices using GaN/LGS heteroepitaxy.
Fabrication of wafer-scale nanopatterned sapphire substrate through phase separation lithography
NASA Astrophysics Data System (ADS)
Guo, Xu; Ni, Mengyang; Zhuang, Zhe; Dai, Jiangping; Wu, Feixiang; Cui, Yushuang; Yuan, Changsheng; Ge, Haixiong; Chen, Yanfeng
2016-04-01
A phase separation lithography (PSL) based on polymer blend provides an extremely simple, low-cost, and high-throughput way to fabricate wafer-scale disordered nanopatterns. This method was introduced to fabricate nanopatterned sapphire substrates (NPSSs) for GaN-based light-emitting diodes (LEDs). The PSL process only involved in spin-coating of polystyrene (PS)/polyethylene glycol (PEG) polymer blend on sapphire substrate and followed by a development with deionized water to remove PEG moiety. The PS nanoporous network was facilely obtained, and the structural parameters could be effectively tuned by controlling the PS/PEG weight ratio of the spin-coating solution. 2-in. wafer-scale NPSSs were conveniently achieved through the PS nanoporous network in combination with traditional nanofabrication methods, such as O2 reactive ion etching (RIE), e-beam evaporation deposition, liftoff, and chlorine-based RIE. In order to investigate the performance of such NPSSs, typical blue LEDs with emission wavelengths of ~450 nm were grown on the NPSS and a flat sapphire substrate (FSS) by metal-organic chemical vapor deposition, respectively. The integral photoluminescence (PL) intensity of the NPSS LED was enhanced by 32.3 % compared to that of the FSS-LED. The low relative standard deviation of 4.7 % for PL mappings of NPSS LED indicated the high uniformity of PL data across the whole 2-in. wafer. Extremely simple, low cost, and high throughput of the process and the ability to fabricate at the wafer scale make PSL a potential method for production of nanopatterned sapphire substrates.
NASA Astrophysics Data System (ADS)
Bashir, Umar; Hassan, Zainuriah; Ahmed, Naser M.; Afzal, Naveed
2018-05-01
Indium nitride (InN) films were grown on Si (111), bulk GaN, quartz and sapphire substrates by radio frequency magnetron sputtering. Prior to the film deposition, a zinc oxide (ZnO) buffer layer was deposited on all the substrates. The x-ray diffraction patterns of InN films on ZnO-buffered substrates indicated c-plane-oriented films whereas the Raman spectroscopy results indicated A1 (LO) and E2 (high) modes of InN on all the substrates. The crystalline quality of InN was found to be better on sapphire and quartz than on the other substrates. The surface roughness of InN was studied using an atomic force microscope. The results indicated higher surface roughness of the film on sapphire as compared to the others; however, roughness of the film was lower than 8 nm on all the substrates. The electrical properties indicated higher electron mobility of InN (20.20 cm2/Vs) on bulk GaN than on the other substrates. The optical band gap of InN film was more than 2 eV in all the cases and was attributed to high carrier concentration in the film.
NASA Astrophysics Data System (ADS)
Dai, LongGui; Yang, Fan; Yue, Gen; Jiang, Yang; Jia, Haiqiang; Wang, Wenxin; Chen, Hong
2014-11-01
Generally, nano-scale patterned sapphire substrate (NPSS) has better performance than micro-scale patterned sapphire substrate (MPSS) in improving the light extraction efficiency of LEDs. Laser interference lithography (LIL) is one of the powerful fabrication methods for periodic nanostructures without photo-masks for different designs. However, Lloyd's mirror LIL system has the disadvantage that fabricated patterns are inevitably distorted, especially for large-area twodimensional (2D) periodic nanostructures. Herein, we introduce two-beam LIL system to fabricate consistent large-area NPSS. Quantitative analysis and characterization indicate that the high uniformity of the photoresist arrays is achieved. Through the combination of dry etching and wet etching techniques, the well-defined NPSS with period of 460 nm were prepared on the whole sapphire substrate. The deviation is 4.34% for the bottom width of the triangle truncated pyramid arrays on the whole 2-inch sapphire substrate, which is suitable for the application in industrial production of NPSS.
Realizing structural color generation with aluminum plasmonic V-groove metasurfaces
Wang, Wei; Rosenmann, Daniel; Czaplewski, David A.; ...
2017-08-14
The structural color printing based on all-aluminum plasmonic V-groove metasurfaces is demonstrated under both bright field and dark field illumination conditions. A broad visible color range is realized with the plasmonic V-groove arrays etched on aluminum surface by simply varying the groove depth while keeping the groove period as a constant. Polarization dependent structural color printing is further achieved with interlaced V-groove arrays along both the horizontal and vertical directions. Furthermore, these results pave the way towards the use of all-aluminum structural color printing platform for many practical applications such as security marking and information storage.
Realizing structural color generation with aluminum plasmonic V-groove metasurfaces
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Wei; Rosenmann, Daniel; Czaplewski, David A.
The structural color printing based on all-aluminum plasmonic V-groove metasurfaces is demonstrated under both bright field and dark field illumination conditions. A broad visible color range is realized with the plasmonic V-groove arrays etched on aluminum surface by simply varying the groove depth while keeping the groove period as a constant. Polarization dependent structural color printing is further achieved with interlaced V-groove arrays along both the horizontal and vertical directions. Furthermore, these results pave the way towards the use of all-aluminum structural color printing platform for many practical applications such as security marking and information storage.
NASA Technical Reports Server (NTRS)
Kim, Hyun Jung; Choi, Sang H.; Bae, Hyung-Bin; Lee, Tae Woo
2012-01-01
The National Aeronautics and Space Administration-invented X-ray diffraction (XRD) methods, including the total defect density measurement method and the spatial wafer mapping method, have confirmed super hetero epitaxy growth for rhombohedral single crystalline silicon germanium (Si1-xGex) on a c-plane sapphire substrate. However, the XRD method cannot observe the surface morphology or roughness because of the method s limited resolution. Therefore the authors used transmission electron microscopy (TEM) with samples prepared in two ways, the focused ion beam (FIB) method and the tripod method to study the structure between Si1-xGex and sapphire substrate and Si1?xGex itself. The sample preparation for TEM should be as fast as possible so that the sample should contain few or no artifacts induced by the preparation. The standard sample preparation method of mechanical polishing often requires a relatively long ion milling time (several hours), which increases the probability of inducing defects into the sample. The TEM sampling of the Si1-xGex on sapphire is also difficult because of the sapphire s high hardness and mechanical instability. The FIB method and the tripod method eliminate both problems when performing a cross-section TEM sampling of Si1-xGex on c-plane sapphire, which shows the surface morphology, the interface between film and substrate, and the crystal structure of the film. This paper explains the FIB sampling method and the tripod sampling method, and why sampling Si1-xGex, on a sapphire substrate with TEM, is necessary.
Xu, Zai-Quan; Zhang, Yupeng; Lin, Shenghuang; Zheng, Changxi; Zhong, Yu Lin; Xia, Xue; Li, Zhipeng; Sophia, Ponraj Joice; Fuhrer, Michael S; Cheng, Yi-Bing; Bao, Qiaoliang
2015-06-23
Two-dimensional layered transition metal dichalcogenides (TMDs) show intriguing potential for optoelectronic devices due to their exotic electronic and optical properties. Only a few efforts have been dedicated to large-area growth of TMDs. Practical applications will require improving the efficiency and reducing the cost of production, through (1) new growth methods to produce large size TMD monolayer with less-stringent conditions, and (2) nondestructive transfer techniques that enable multiple reuse of growth substrate. In this work, we report to employ atmospheric pressure chemical vapor deposition (APCVD) for the synthesis of large size (>100 μm) single crystals of atomically thin tungsten disulfide (WS2), a member of TMD family, on sapphire substrate. More importantly, we demonstrate a polystyrene (PS) mediated delamination process via capillary force in water which reduces the etching time in base solution and imposes only minor damage to the sapphire substrate. The transferred WS2 flakes are of excellent continuity and exhibit comparable electron mobility after several growth cycles on the reused sapphire substrate. Interestingly, the photoluminescence emission from WS2 grown on the recycled sapphire is much higher than that on fresh sapphire, possibly due to p-type doping of monolayer WS2 flakes by a thin layer of water intercalated at the atomic steps of the recycled sapphire substrate. The growth and transfer techniques described here are expected to be applicable to other atomically thin TMD materials.
NASA Astrophysics Data System (ADS)
Yang, Xu; Nitta, Shugo; Pristovsek, Markus; Liu, Yuhuai; Nagamatsu, Kentaro; Kushimoto, Maki; Honda, Yoshio; Amano, Hiroshi
2018-05-01
Hexagonal boron nitride (h-BN) films directly grown on c-plane sapphire substrates by pulsed-mode metalorganic vapor phase epitaxy exhibit an interlayer for growth temperatures above 1200 °C. Cross-sectional transmission electron microscopy shows that this interlayer is amorphous, while the crystalline h-BN layer above has a distinct orientational relationship with the sapphire substrate. Electron energy loss spectroscopy shows the energy-loss peaks of B and N in both the amorphous interlayer and the overlying crystalline h-BN layer, while Al and O signals are also seen in the amorphous interlayer. Thus, the interlayer forms during h-BN growth through the decomposition of the sapphire at elevated temperatures.
NASA Technical Reports Server (NTRS)
Mueller, Carl; Alterovitz, Samuel; Croke, Edward; Ponchak, George
2004-01-01
System-on-a-chip (SOC) processes are under intense development for high-speed, high frequency transceiver circuitry. As frequencies, data rates, and circuit complexity increases, the need for substrates that enable high-speed analog operation, low-power digital circuitry, and excellent isolation between devices becomes increasingly critical. SiGe/Si modulation doped field effect transistors (MODFETs) with high carrier mobilities are currently under development to meet the active RF device needs. However, as the substrate normally used is Si, the low-to-modest substrate resistivity causes large losses in the passive elements required for a complete high frequency circuit. These losses are projected to become increasingly troublesome as device frequencies progress to the Ku-band (12 - 18 GHz) and beyond. Sapphire is an excellent substrate for high frequency SOC designs because it supports excellent both active and passive RF device performance, as well as low-power digital operations. We are developing high electron mobility SiGe/Si transistor structures on r-plane sapphire, using either in-situ grown n-MODFET structures or ion-implanted high electron mobility transistor (HEMT) structures. Advantages of the MODFET structures include high electron mobilities at all temperatures (relative to ion-implanted HEMT structures), with mobility continuously improving to cryogenic temperatures. We have measured electron mobilities over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively in MODFET structures. The electron carrier densities were 1.6 and 1.33 x 10(exp 12)/sq cm at room and liquid helium temperature, respectively, denoting excellent carrier confinement. Using this technique, we have observed electron mobilities as high as 900 sq cm/V-sec at room temperature at a carrier density of 1.3 x 10(exp 12)/sq cm. The temperature dependence of mobility for both the MODFET and HEMT structures provides insights into the mechanisms that allow for enhanced
High Electron Mobility in SiGe/Si n-MODFET Structures on Sapphire Substrates
NASA Technical Reports Server (NTRS)
Mueller, Carl H.; Croke, Edward T.; Alterovitz, Samuel A.
2003-01-01
For the first time, SiGe/Si n-Modulation Doped Field Effect Transistors (n-MODFET) structures have been grown on sapphire substrates. Room temperature electron mobility value of 1271 square centimeters N-sec at an electron carrier density (n(sub e) = 1.33x10(exp 12) per square centimeter)) of 1.6 x 10(exp 12) per square centimeter was obtained. At 250 mK, the mobility increases to 13,313 square centimeters/V-sec (n(sub e)=1.33x10(exp 12) per square centimeter)) and Shubnikov-de Haas oscillations appear, showing excellent confinement of the two-dimensional electron gas.
High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates
NASA Technical Reports Server (NTRS)
Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.
2004-01-01
SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony concentration was approximately 4 x 10(exp 19) per cubic centimeter. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per square centimeter, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V (sub DS)) range, with V (sub DS) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.
High Mobility SiGe/Si n-Type Structures and Field Effect Transistors on Sapphire Substrates
NASA Technical Reports Server (NTRS)
Alterovitz, Samuel A.; Ponchak, George E.; Mueller, Carl H.; Croke, Edward T.
2004-01-01
SiGe/Si n-type modulation doped field effect transistors (MODFETs) fabricated on sapphire substrates have been characterized at microwave frequencies for the first time. The highest measured room temperature electron mobility is 1380 sq cm/V-sec at a carrier density of 1.8 x 10(exp 12)/sq cm for a MODFET structure, and 900 sq cm/V-sec at a carrier density of 1.3 x 10/sq cm for a phosphorus ion implanted sample. A two finger, 2 x 200 micron gate n-MODFET has a peak transconductance of 37 mS/mm at a drain to source voltage of 2.5 V and a transducer gain of 6.4 dB at 1 GHz.
NASA Astrophysics Data System (ADS)
Akazawa, Housei; Ueno, Yuko
2014-10-01
We report how the crystallinity and orientation of hydroxyapatite (HAp) films deposited on sapphire substrates depend on the crystallographic planes. Both solid-phase crystallization of amorphous HAp films and crystallization during sputter deposition at elevated temperatures were examined. The low-temperature epitaxial phase on C-plane sapphire substrates has c-axis orientated HAp crystals regardless of the crystallization route, whereas the preferred orientation switches to the (310) direction at higher temperatures. Only the symmetric stretching mode (ν1) of PO43- units appears in the Raman scattering spectra, confirming well-ordered crystalline domains. In contrast, HAp crystals grown on A-plane sapphire substrates are always oriented toward random orientations. Exhibiting all vibrational modes (ν1, ν3, and ν4) of PO43- units in the Raman scattering spectra reflects random orientation, violating the Raman selection rule. If we assume that Raman intensities of PO43- units represent the crystallinity of HAp films, crystallization terminating the surface with the C-plane is hindered by the presence of excess H2O and OH species in the film, whereas crystallization at random orientations on the A-plane sapphire is rather promoted by these species. Such contrasting behaviors between C-plane and A-plane substrates will reflect surface-plane dependent creation of crystalline seeds and eventually determine the orientation of resulting HAp films.
Ga2O3-In2O3 thin films on sapphire substrates: Synthesis and ultraviolet photoconductivity
NASA Astrophysics Data System (ADS)
Muslimov, A. E.; Butashin, A. V.; Kolymagin, A. B.; Nabatov, B. V.; Kanevsky, V. M.
2017-11-01
The structure and electrical and optical properties of β-Ga2O3-In2O3 thin films on sapphire substrates with different orientations have been investigated. The samples have been prepared by annealing of gallium-indium metallic films on sapphire substrates in air at different gallium-to-indium ratios in the initial mixture. The photoconductivity of these structures in the solar-blind ultraviolet spectral region has been examined.
High Electron Mobility SiGe/Si Transistor Structures on Sapphire Substrates
NASA Technical Reports Server (NTRS)
Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.; Ponchak, George E.
2003-01-01
SiGe/Si n-type modulation doped field effect structures and transistors (n-MODFETs) have been fabricated on r-plane sapphire substrates. The structures were deposited using molecular beam epitaxy, and antimony dopants were incorporated via a delta doping process. Secondary ion mass spectroscopy (SIMS) indicates that the peak antimony, concentration was approximately 4 x 10(exp19) per cubic cm. The electron mobility was over 1,200 and 13,000 sq cm/V-sec at room temperature and 0.25 K, respectively. At these two temperatures, the electron carrier densities were 1.6 and 1.33 x 10(exp 12) per sq cm, thus demonstrating that carrier confinement was excellent. Shubnikov-de Haas oscillations were observed at 0.25 K, thus confirming the two-dimensional nature of the carriers. Transistors, with gate lengths varying from 1 micron to 5 microns, were fabricated using these structures and dc characterization was performed at room temperature. The saturated drain current region extended over a wide source-to-drain voltage (V(sub DS)) range, with (V(sub DS)) knee voltages of approximately 0.5 V and increased leakage starting at voltages slightly higher than 4 V.
NASA Astrophysics Data System (ADS)
Li, Qiang; Lai, Billy; Lau, Kei May
2017-10-01
We report epitaxial growth of GaSb nano-ridge structures and planar thin films on V-groove patterned Si (001) substrates by leveraging the aspect ratio trapping technique. GaSb was deposited on {111} Si facets of the V-shaped trenches using metal-organic chemical vapor deposition with a 7 nm GaAs growth initiation layer. Transmission electron microscopy analysis reveals the critical role of the GaAs layer in providing a U-shaped surface for subsequent GaSb epitaxy. A network of misfit dislocations was uncovered at the GaSb/GaAs hetero-interface. We studied the evolution of the lattice relaxation as the growth progresses from closely pitched GaSb ridges to coalesced thin films using x-ray diffraction. The omega rocking curve full-width-at-half-maximum of the resultant GaSb thin film is among the lowest values reported by molecular beam epitaxy, substantiating the effectiveness of the defect necking mechanism. These results thus present promising opportunities for the heterogeneous integration of devices based on 6.1 Å family compound semiconductors.
Zeta potential orientation dependence of sapphire substrates.
Kershner, Ryan J; Bullard, Joseph W; Cima, Michael J
2004-05-11
The zeta potential of planar sapphire substrates for three different crystallographic orientations was measured by a streaming potential technique in the presence of KCl and (CH3)4NCl electrolytes. The streaming potential was measured for large single crystalline C-plane (0001), A-plane (1120), and R-plane (1102) wafers over a full pH range at three or more ionic strengths ranging from 1 to 100 mM. The roughness of the epi-polished wafers was verified using atomic force microscopy to be on the order of atomic scale, and X-ray photoelectron spectroscopy (XPS) was used to ensure that the samples were free of silica and other contaminants. The results reveal a shift in the isoelectric point (iep) of the three samples by as much as two pH units, with the R-plane surface exhibiting the most acidic behavior and the C-plane samples having the highest iep. The iep at all ionic strengths was tightly centered around a single pH for each wafer. These values of iep are substantially different from the range of pH 8-10 consistently reported in the literature for alpha-Al2O3 particles. Particle zeta potential measurements were performed on a model powder using phase analysis light scattering, and the iep was confirmed to occur at pH 8. Modified Auger parameters (MAP) were calculated from XPS spectra of a monolayer of iridium metal deposited on the sapphire by electron beam deposition. A shift in MAP consistent with the observed differences in iep of the surfaces confirms the effect of surface structure on the transfer of charge between the Ir and sapphire, hence accounting for the changes in acidity as a function of crystallographic orientation.
Liquid-phase growth of few-layered graphene on sapphire substrates using SiC micropowder source
NASA Astrophysics Data System (ADS)
Maruyama, Takahiro; Yamashita, Yutaka; Saida, Takahiro; Tanaka, Shin-ichiro; Naritsuka, Shigeya
2017-06-01
We demonstrated direct synthesis of graphene films consisting of a few layers (few-layered graphene) on sapphire substrates by liquid-phase growth (LPG), using liquid Ga as the melt and SiC micropowder as the source material. When the dissolution temperature was above 700 °C, almost all Si atoms of SiC diffused into the Ga melt and only carbon atoms remained at the interface beneath the liquid Ga. Above 800 °C, X-ray photoelectron spectra showed that most of the remaining carbon was graphitized. When the dissolution temperature was 1000 °C, Raman spectra showed that few-layered graphene films grew on the sapphire substrates.
Huang, Jen-Ching; Weng, Yung-Jin
2014-01-01
This study focused on the nanomachining property and cutting model of single-crystal sapphire during nanomachining. The coated diamond probe is used to as a tool, and the atomic force microscopy (AFM) is as an experimental platform for nanomachining. To understand the effect of normal force on single-crystal sapphire machining, this study tested nano-line machining and nano-rectangular pattern machining at different normal force. In nano-line machining test, the experimental results showed that the normal force increased, the groove depth from nano-line machining also increased. And the trend is logarithmic type. In nano-rectangular pattern machining test, it is found when the normal force increases, the groove depth also increased, but rather the accumulation of small chips. This paper combined the blew by air blower, the cleaning by ultrasonic cleaning machine and using contact mode probe to scan the surface topology after nanomaching, and proposed the "criterion of nanomachining cutting model," in order to determine the cutting model of single-crystal sapphire in the nanomachining is ductile regime cutting model or brittle regime cutting model. After analysis, the single-crystal sapphire substrate is processed in small normal force during nano-linear machining; its cutting modes are ductile regime cutting model. In the nano-rectangular pattern machining, due to the impact of machined zones overlap, the cutting mode is converted into a brittle regime cutting model. © 2014 Wiley Periodicals, Inc.
NASA Astrophysics Data System (ADS)
Gao, Haiyong; Yan, Fawang; Zhang, Yang; Li, Jinmin; Zeng, Yiping; Wang, Guohong
2008-01-01
Sapphire substrates were patterned by a chemical wet etching technique in the micro- and nanoscale to enhance the light output power of InGaN/GaN light-emitting diodes (LEDs). InGaN/GaN LEDs on a pyramidal patterned sapphire substrate in the microscale (MPSS) and pyramidal patterned sapphire substrate in the nanoscale (NPSS) were grown by metalorganic chemical vapor deposition. The characteristics of the LEDs fabricated on the MPSS and NPSS prepared by wet etching were studied and the light output powers of the LEDs fabricated on the MPSS and NPSS increased compared with that of the conventional LEDs fabricated on planar sapphire substrates. In comparison with the planar sapphire substrate, an enhancement in output power of about 29% and 48% is achieved with the MPSS and NPSS at an injection current of 20 mA, respectively. This significant enhancement is attributable to the improvement of the epitaxial quality of GaN-based epilayers and the improvement of the light extraction efficiency by patterned sapphire substrates. Additionally, the NPSS is more effective to enhance the light output power than the MPSS.
Laser beam joining of optical fibers in silicon V-grooves
NASA Astrophysics Data System (ADS)
Kaufmann, Stefan; Otto, Andreas; Luz, Gerhard
2000-06-01
The increasing use of optical data transmission systems and the development of new optical components require adjustment-insensitive and reliable joining and assembling techniques. The state of the art includes the utilization of silicon submounts with anisotropically etched V-grooves. Several glass fibers are fixed in these V-grooves with adhesive. Adhesive bonds tend towards degradation under the influence of temperature and moisture. For this reason, the alternative joining processes laser beam welding and laser beam soldering are relevant. The goal is a reliable joining of optical fibers in V-grooves without damage to the fibers or the silicon submount. Because of the anomaly of silicon during phase transformation, a positive joining can be realized by laser beam welding. A melt pool is created through the energy of a Nd:YAG-laser pulse. During solidification, the volume of silicon increases and a bump is formed in the center. Experiments have shown that this phenomenon can be used for joining optical fibers in silicon-V-grooves. With suitable parameters the silicon flows half around the fiber during solidification. For each fiber, several welding points are necessary. Another promising joining method is laser bema soldering. In this case, a second silicon sheet with a solder deposit is placed on the fibers which lie in the V-grooves of the metallized silicon submount. The laser heats the upper silicon until the solder metals by heat conduction.
High-T(sub c) Edge-geometry SNS Weak Links on Silicon-on-sapphire Substrates
NASA Technical Reports Server (NTRS)
Hunt, B.; Foote, M.; Pike, W.; Barner, J.; Vasquez, R.
1994-01-01
High-quality superconductor/normal-metal/superconductor(SNS) edge-geometry weak links have been produced on silicon-on-sapphire (SOS) substrates using a new SrTiO(sub 3)/'seed layer'/cubic-zirconia (YS2) buffer system.
YBCO High-Temperature Superconducting Filters on M-Plane Sapphire Substrates
NASA Technical Reports Server (NTRS)
Sabataitis, J. C.; Mueller, C. H.; Miranda, F. A.; Warner, J.; Bhasin, K. B.
1996-01-01
Since the discovery of High Temperature Superconductors (HTS) in 1986, microwave circuits have been demonstrated using HTS films on various substrates. These HTS-based circuits have proven to operate with less power loss than their metallic film counterparts at 77 K. This translates into smaller and lighter microwave circuits for space communication systems such as multiplexer filter banks. High quality HTS films have conventionally been deposited on lanthanum aluminate (LaAlO3) substrates. However, LaAlO3 has a relative dielectric constant (epsilon(sub r)) of 24. With a epsilon(sub r) approx. 9.4-11.6, sapphire (Al2O3) would be a preferable substrate for the fabrication of HTS-based components since the lower dielectric constant would permit wider microstrip lines to be used in filter design, since the lower dielectric constant would permit wider microstrip lines to be used for a given characteristic impedance (Z(sub 0)), thus lowering the insertion losses and increasing the power handling capabilities of the devices. We report on the fabrication and characterization of YBa2Cu3O(7-delta) (YBCO) on M-plane sapphire bandpass filters at 4.0 GHz. For a YBCO 'hairpin' filter, a minimum insertion loss of 0.5 dB was measured at 77 K as compared with 1.4 dB for its gold counterpart. In an 'edge-coupled' configuration, the insertion loss went down from 0.9 dB for the gold film to 0.8 dB for the YBCO film at the same temperature.
2013-01-01
Large-scale nanopatterned sapphire substrates were fabricated by annealing of patterned Al thin films. Patterned Al thin films were obtained by soft UV-nanoimprint lithography and reactive ion etching. The soft mold with 550-nm-wide lines separated by 250-nm space was composed of the toluene-diluted polydimethylsiloxane (PDMS) layer supported by the soft PDMS. Patterned Al thin films were subsequently subjected to dual-stage annealing due to the melting temperature of Al thin films (660°C). The first comprised a low-temperature oxidation anneal at 450°C for 24 h. This was followed by a high-temperature annealing in the range of 1,000°C and 1,200°C for 1 h to induce growth of the underlying sapphire single crystal to consume the oxide layer. The SEM results indicate that the patterns were retained on sapphire substrates after high-temperature annealing at less than 1,200°C. Finally, large-scale nanopatterned sapphire substrates were successfully fabricated by annealing of patterned Al thin films for 24 h at 450°C and 1 h at 1,000°C by soft UV-nanoimprint lithography. PMID:24215718
Improved output power of GaN-based light-emitting diodes grown on a nanopatterned sapphire substrate
NASA Astrophysics Data System (ADS)
Chan, Chia-Hua; Hou, Chia-Hung; Tseng, Shao-Ze; Chen, Tsing-Jen; Chien, Hung-Ta; Hsiao, Fu-Li; Lee, Chien-Chieh; Tsai, Yen-Ling; Chen, Chii-Chang
2009-07-01
This letter describes the improved output power of GaN-based light-emitting diodes (LEDs) formed on a nanopatterned sapphire substrate (NPSS) prepared through etching with a self-assembled monolayer of 750-nm-diameter SiO2 nanospheres used as the mask. The output power of NPSS LEDs was 76% greater than that of LEDs on a flat sapphire substrate. Three-dimensional finite-difference time-domain calculation predicted a 40% enhancement in light extraction efficiency of NPSS LEDs. In addition, the reduction of full widths at half maximum in the ω-scan rocking curves for the (0 0 2) and (1 0 2) planes of GaN on NPSS suggested improved crystal quality.
GaAs Solar Cells on V-Grooved Silicon via Selective Area Growth: Preprint
DOE Office of Scientific and Technical Information (OSTI.GOV)
Warren, Emily L; Jain, Nikhil; Tamboli, Adele C
Interest in integrating III-Vs onto Si has recently resurged as a promising pathway towards high-efficiency, low-cost tandem photovoltaics. Here, we present a single junction GaAs solar cell grown monolithically on polished Si (001) substrates using V-grooves, selective area growth, and aspect ratio trapping to mitigate defect formation without the use of expensive, thick graded buffers. The GaAs is free of antiphase domains and maintains a relatively low TDD of 4x107 cm-2, despite the lack of a graded buffer. This 6.25 percent-efficient demonstration solar cell shows promise for further improvements to III-V/Si tandems to enable cost-competitive photovoltaics.
NASA Astrophysics Data System (ADS)
Lin, Yu-Sheng; Yeh, J. Andrew
2011-09-01
High-efficiency GaN-based light-emitting diodes (LEDs) with an emitting wavelength of 438 nm were demonstrated utilizing nanoscale patterned sapphire substrates with void-embedded cortex-like nanostructures (NPSS-VECN). Unlike the previous nanopatterned sapphire substrates, the presented substrate has a new morphology that can not only improve the crystalline quality of GaN epilayers but also generate a void-embedded nanostructural layer to enhance light extraction. Under a driving current of 20 mA, the external quantum efficiency of an LED with NPSS-VECN is enhanced by 2.4-fold compared with that of the conventional LED. Moreover, the output powers of two devices respectively are 33.1 and 13.9 mW.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sakai, Joe; Limelette, Patrice; Funakubo, Hiroshi
2015-12-14
We prepared V{sub 2}O{sub 3} thin films on C- or R-plane sapphire (Al{sub 2}O{sub 3}) substrates by a pulsed laser deposition method. X-ray diffraction analyses confirmed that single-phase V{sub 2}O{sub 3} films were epitaxially grown on both C- and R-planes under an Ar gas ambient of 2 × 10{sup −2} mbar at a substrate temperature of 873 K. Depending on the deposition conditions, c/a ratios at room temperature of (0001)-oriented V{sub 2}O{sub 3} films widely ranged from 2.79 to 2.88. Among them, the films of 2.81 ≤ c/a ≤ 2.84 showed complex metal (M)–insulator (I)–M transition during cooling from 300 to 10 K, while those of larger c/a ratiosmore » were accompanied by metallic properties throughout this temperature range. All the films on R-plane substrates underwent simple M-I transition at ∼150 K, which was more abrupt than the films on C-plane, whereas their c/a ratios were narrowly distributed. The distinct difference of M-I transition properties between C- and R-plane films is explained by the intrinsic a- and c-axes evolution through the transition from M to I phases.« less
High Mobility SiGe/Si Transistor Structures on Sapphire Substrates Using Ion Implantation
NASA Technical Reports Server (NTRS)
Alterovitz, S. A.; Mueller, C. H.; Croke, E. T.
2003-01-01
High mobility n-type SiGe/Si transistor structures have been fabricated on sapphire substrates by ion implanting phosphorus ions into strained 100 Angstrom thick silicon channels for the first time. The strained Si channels were sandwiched between Si(sub 0.7)Ge(sub 0.3) layers, which, in turn, were deposited on Si(sub 0.7)Ge(sub 0.3) virtual substrates and graded SiGe buffer layers. After the molecular beam epitaxy (MBE) film growth process was completed, ion thick silicon channels implantation and post-annealing were used to introduce donors. The phosphorous ions were preferentially located in the Si channel at a peak concentration of approximately 1x10(exp 18)/cu cm. Room temperature electron mobilities exceeding 750 sq cm/V-sec at carrier densities of 1x10(exp 12)/sq cm were measured. Electron concentration appears to be the key factor that determines mobility, with the highest mobility observed for electron densities in the 1 - 2x10(exp 12)/sq cm range.
Complex Investigations of Sapphire Crystals Production
NASA Astrophysics Data System (ADS)
Malyukov, S. P.; Klunnikova, Yu V.
The problem of optimum conditions choice for processing sapphire substrates was solved with optimization methods and with combination of analytical simulation methods, experiment and expert system technology. The experimental results and software give rather full information on features of real structure of the sapphire crystal substrates and can be effectively used for optimization of technology of the substrate preparation for electronic devices.
Mathematical modeling of photovoltaic thermal PV/T system with v-groove collector
NASA Astrophysics Data System (ADS)
Zohri, M.; Fudholi, A.; Ruslan, M. H.; Sopian, K.
2017-07-01
The use of v-groove in solar collector has a higher thermal efficiency in references. Dropping the working heat of photovoltaic panel was able to raise the electrical efficiency performance. Electrical and thermal efficiency were produced by photovoltaic thermal (PV/T) system concurrently. Mathematical modeling based on steady-state thermal analysis of PV/T system with v-groove was conducted. With matrix inversion method, the energy balance equations are explained by means of the investigative method. The comparison results show that in the PV/T system with the V-groove collector is higher temperature, thermal and electrical efficiency than other collectors.
NASA Astrophysics Data System (ADS)
Sivanathan, P. C.; Shuhaimi, Ahmad; Hamza, Hebal; Kowsz, Stacy J.; Abdul Khudus, Muhammad I. M.; Li, Hongjian; Allif, Kamarul
2018-07-01
The InGaN/GaN multi-quantum wells, growth on bulk GaN substrate were studied for blue light emission. Growth temperature plays a key role determining the peak wavelength of a quantum well. The study was carried out by growing quantum wells, MQWs on the whole sapphire at 716 °C and observed peak wavelength at 463 nm. While the bulk GaN substrate with sapphire corral grown at 703 °C and observed a blueshift at 433 nm peak wavelength. These results contradict that of typical observation of wavelength emission inversely proportional to the growth temperature. On the other hand, the growth of GaN-sapphire and GaN-silicon at similar conditions emits 435 nm and 450 nm respectively. The heat interaction of bulk GaN substrates surrounded by the sapphire corral exhibits different growth conditions in multi-quantum wells when compared to that of a whole sapphire substrate (absence of bulk GaN). The predicated surface temperature of bulk GaN substrate is 10 °C-15 °C of more than the corral sapphire. This observation may link to the difference in the thermal distribution of the growth surface corresponding to the different thermal conductivity ratio. The photoluminescence and computational techniques were used to understand in-depth of the heat interaction.
Microwave properties of peeled HEMT devices sapphire substrates
NASA Technical Reports Server (NTRS)
Young, Paul G.; Alterovitz, Samuel A.; Mena, Rafael A.; Smith, Edwyn D.
1992-01-01
The focus of this research is to demonstrate the first full radio frequency characterization of high electron mobility transistor (HEMT) device parameters. The results of this research are used in the design of circuits with peeled HEMT devices, e.g. 10 GHz amplifiers. Devices were fabricated using two HEMT structures grown by molecular beam epitaxy methods. A 500 A AlAs release layer for 'peel off' was included under the active layers of the structure. The structures are a homogeneously doped Al(0.3)GA(0.7)As/GaAs and a delta doped square well Al(.23)Ga(.77)As/GaAs HEMT structure. Devices were fabricated using a mesa isolation process. Contacts were done by sequentially evaporating Au/Ge/Au/Ni/Au followed by rapid thermal anneal at 400 C for 15 seconds. Gates were wet etch recessed and 1 to 1.4 micron Ti/Au gate metal was deposited. Devices were peeled off the GaAs substrate using Apiezon wax to support the active layer and a HF:DI (1:10) solution to remove the AlAs separation layer. Devices were then attached to sapphire substrates using van der Waals bonding.
NASA Astrophysics Data System (ADS)
Loka, Chadrasekhar; Moon, Sung Whan; Choi, YiSik; Lee, Kee-Sun
2018-03-01
Transparent conducting oxides attract intense interests due to its diverse industrial applications. In this study, we report sapphire substrate-based TiO2/Ag/TiO2 (TAT) multilayer structure of indium-free transparent conductive multilayer coatings. The TAT thin films were deposited at room temperature on sapphire substrates and a rigorous analysis has been presented on the electrical and optical properties of the films as a function of Ag thickness. The optical and electrical properties were mainly controlled by the Ag mid-layer thickness of the TAT tri-layer. The TAT films showed high luminous transmittance 84% at 550 nm along with noteworthy low electrical resistance 3.65 × 10-5 Ω-cm and sheet resistance of 3.77 Ω/square, which is better are than those of amorphous ITO films and any sapphire-based dielectric/metal/dielectric multilayer stack. The carrier concentration of the films was increased with respect to Ag thickness. We obtained highest Hackke's figure of merit 43.97 × 10-3 Ω-1 from the TAT multilayer thin film with a 16 nm thick Ag mid-layer.
NASA Astrophysics Data System (ADS)
Okita, Koshi; Inaba, Katsuhiko; Yatabe, Zenji; Nakamura, Yusui
2018-06-01
ZnS is attractive as a material for low-cost light-emitting diodes. In this study, a non-polar ZnS layer was epitaxially grown on a sapphire substrate by inserting a ZnO buffer layer between ZnS and sapphire. The ZnS and ZnO layers were grown by a mist chemical vapor deposition system with a simple setup operated under atmospheric pressure. The sample was characterized by high-resolution X-ray diffraction measurements including 2θ/ω scans, rocking curves, and reciprocal space mapping. The results showed that an m-plane wurtzite ZnS layer grew epitaxially on an m-plane wurtzite ZnO buffer layer formed on the m-plane sapphire substrate to provide a ZnS/ZnO/sapphire structure.
Geng, Chong; Zheng, Lu; Fang, Huajing; Yan, Qingfeng; Wei, Tongbo; Hao, Zhibiao; Wang, Xiaoqing; Shen, Dezhong
2013-08-23
Patterned sapphire substrates (PSS) have been widely used to enhance the light output power in GaN-based light emitting diodes. The shape and feature size of the pattern in a PSS affect its enhancement efficiency to a great degree. In this work we demonstrate the nanoscale fabrication of volcano-shaped PSS using a wet chemical etching approach in combination with a colloidal monolayer templating strategy. Detailed analysis by scanning electron microscopy reveals that the unique pattern shape is a result of the different corrosion-resistant abilities of silica masks of different effective heights during wet chemical etching. The formation of silica etching masks of different effective heights has been ascribed to the silica precursor solution in the interstice of the colloidal monolayer template being distributed unevenly after infiltration. In the subsequent wet chemical etching process, the active reaction sites altered as etching duration was prolonged, resulting in the formation of volcano-shaped nano-patterned sapphire substrates.
Temperature-modulated annealing of c-plane sapphire for long-range-ordered atomic steps
NASA Astrophysics Data System (ADS)
Yatsui, Takashi; Kuribara, Kazunori; Sekitani, Tsuyoshi; Someya, Takao; Yoshimoto, Mamoru
2016-03-01
High-quality single-crystalline sapphire is used to prepare various semiconductors because of its thermal stability. Here, we applied the tempering technique, which is well known in the production of chocolate, to prepare a sapphire substrate. Surprisingly, we successfully realised millimetre-range ordering of the atomic step of the sapphire substrate. We also obtained a sapphire atomic step with nanometre-scale uniformity in the terrace width and atomic-step height. Such sapphire substrates will find applications in the preparation of various semiconductors and devices.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Kim, Young-Min
In Part I, we have shown that the addition of Si into sapphire by ion implantationmakes the sapphire substrate elastically softer than for the undoped sapphire. The more compliant layer of the Si-implanted sapphire substrate can absorb the misfit stress at the GaN/sapphire interface, which produces a lower threading-dislocation density in the GaN overlayer. Here in Part II, based on experimental results by electron energy loss spectroscopy and a first-principle molecular orbital calculation in the literature, we suggest that the softening effect of Si results from a reduction of ionic bonding strength in sapphire (α-Al{sub 2}O{sub 3}) with the substitutionmore » of Si for Al.« less
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography.
Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo
2016-11-04
We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
NASA Astrophysics Data System (ADS)
Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo
2016-11-01
We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer.
High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
Zhang, Lisheng; Xu, Fujun; Wang, Jiaming; He, Chenguang; Guo, Weiwei; Wang, Mingxing; Sheng, Bowen; Lu, Lin; Qin, Zhixin; Wang, Xinqiang; Shen, Bo
2016-01-01
We report epitaxial growth of AlN films with atomically flat surface on nano-patterned sapphire substrates (NPSS) prepared by nano-imprint lithography. The crystalline quality can be greatly improved by using the optimized 1-μm-period NPSS. The X-ray diffraction ω-scan full width at half maximum values for (0002) and (102) reflections are 171 and 205 arcsec, respectively. The optimized NPSS contribute to eliminating almost entirely the threading dislocations (TDs) originating from the AlN/sapphire interface via bending the dislocations by image force from the void sidewalls before coalescence. In addition, reducing the misorientations of the adjacent regions during coalescence adopting the low lateral growth rate is also essential for decreasing TDs in the upper AlN epilayer. PMID:27812006
NASA Astrophysics Data System (ADS)
Zhang, Yonghui; Wei, Tongbo; Wang, Junxi; Lan, Ding; Chen, Yu; Hu, Qiang; Lu, Hongxi; Li, Jinmin
2014-02-01
Self-assembly SiO2 nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, the external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.
An optical biosensor using MEMS-based V-grooves
NASA Astrophysics Data System (ADS)
Tian, Ye; Ma, Xiaodong; Zou, Xiaotian; Wu, Nan; Wang, Xingwei
2011-05-01
An optical fiber biosensor featuring miniaturization, electromagnetic interference (EMI)-immunity, and flexibility is presented. The sensor was fabricated by aligning two gold-deposited optical single-mode fiber facets inside V-grooves on a silicon chip to form a Fabry-Perot (FP) cavity. The mirrors on the fiber facets were made of deposited gold (Au) films, which provided a high finesse to produce a highly sensitivity. Microelectromechanical systems (MEMS) fabrication techniques were used to precisely control the profile and angle of the V-grooves on the silicon. The biotin-terminated thiol molecule was firstly immobilized on the gold surface. Subsequently, the molecules of Neutravidin were specifically bound to the biotin-terminated self-assembled monolayers (SAMs). The induced changes of cavity length and refractive index (RI) upon the gold surface lead to an optical path difference (OPD) of the FP cavity, which was detected by demodulating the transmission spectrum phase shift. By taking advantage of MEMS techniques, multiple biosensors can be integrated into one small silicon chip for detecting various biomolecule targets simultaneously.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Liu, Hao; Li, Yufeng; Wang, Shuai
Air-void structure was introduced in GaN-based blue light-emitting diodes (LED) with one-step growth on periodic laser drilling patterned sapphire substrate, which free of any photolithography or wet/dry etching process. The influence of filling factors (FF) of air-void on crystal quality and optical performance were investigate. Transmission electron microscopy images and micro-Raman spectroscopy indicated that the dislocation was bended and the partially compressed strain was released. When FF was 55.43%, compared with the LED structure grown on flat sapphire substrate, the incorporation of air-void was observed to reduce the compressed stress of ∼20% and the luminance intensity has improved by 128%.more » Together with the simulated reflection intensity enhancement by finite difference time-domain (FDTD) method, we attribute the enhanced optical performance to the combined contribution of strong back-side light reflection of air-void and better GaN epitaxial quality. This approach provides a simple replacement to the conventional air-void embedded LED process.« less
NASA Astrophysics Data System (ADS)
Seo, Yeonwoo; Lee, Sanghwa; Jue, Miyeon; Yoon, Hansub; Kim, Chinkyo
2012-12-01
Over a wide range of growth conditions, GaN domains were grown on bare m-plane sapphire substrates by using hydride vapor phase epitaxy (HVPE), and the relation between these growth conditions and three possible preferred crystallographic orientations ([1100], [1103], [1122]) of GaN domains was investigated. In contrast with the previous reports by other groups, our results revealed that preferentially [1100]-oriented GaN domains were grown without low-temperature nitridation or a buffer layer, and that the growth condition of preferentially [1100]-oriented GaN was insensitive to V/III ratio.
Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing
2017-01-01
In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1–2 × 109 cm−2, which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 109 cm−2). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices. PMID:28772961
Tasi, Chi-Tsung; Wang, Wei-Kai; Tsai, Tsung-Yen; Huang, Shih-Yung; Horng, Ray-Hua; Wuu, Dong-Sing
2017-05-31
In this study, a 3-μm-thick AlGaN film with an Al mole fraction of 10% was grown on a nanoscale-patterned sapphire substrate (NPSS) using hydride vapor phase epitaxy (HVPE). The growth mechanism, crystallization, and surface morphology of the epilayers were examined using X-ray diffraction, transmission electron microscopy (TEM), and scanning electron microscopy at various times in the growth process. The screw threading dislocation (TD) density of AlGaN-on-NPSS can improve to 1-2 × 10⁸ cm -2 , which is significantly lower than that of the sample grown on a conventional planar sapphire substrate (7 × 10⁸ cm -2 ). TEM analysis indicated that these TDs do not subsequently propagate to the surface of the overgrown AlGaN layer, but bend or change directions in the region above the voids within the side faces of the patterned substrates, possibly because of the internal stress-relaxed morphologies of the AlGaN film. Hence, the laterally overgrown AlGaN films were obtained by HVPE, which can serve as a template for the growth of ultraviolet III-nitride optoelectronic devices.
Site-controlled crystalline InN growth from the V-pits of a GaN substrate
NASA Astrophysics Data System (ADS)
Kuo, Chien-Ting; Hsu, Lung-Hsing; Lai, Yung-Yu; Cheng, Shan-Yun; Kuo, Hao-Chung; Lin, Chien-Chung; Cheng, Yuh-Jen
2017-05-01
A site-controlled crystalline InN growth from the V-pits of a GaN substrate was investigated. The V- pits were fabricated by epitaxial lateral growth of GaN over SiO2 disks patterned on a sapphire substrate. InN crystals were found to preferably grow on the inclined {10-11} crystal planes of the V-pits. A V-pit size of 1 μm or less can provide precise site-controlled InN nucleation at the V-pit bottom, while no InN was grown on the rest of the exposed GaN surfaces. The site-controlled nucleation is attributed to the low surface energy point created by the converging six {10-11} crystal facets at the V-pit bottom. When In source supply is below a certain value, this V-pit bottom is the only location able to aggregate enough active sources to start nucleation, thereby providing site-controlled crystal growth.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zhang, Yonghui; Wei, Tongbo, E-mail: tbwei@semi.ac.cn; Wang, Junxi
2014-02-15
Self-assembly SiO{sub 2} nanosphere monolayer template is utilized to fabricate nanopatterned sapphire substrates (NPSSs) with 0-nm, 50-nm, and 120-nm spacing, receptively. The GaN growth on top of NPSS with 0-nm spacing has the best crystal quality because of laterally epitaxial overgrowth. However, GaN growth from pattern top is more difficult to get smooth surface than from pattern bottom. The rougher surface may result in a higher work voltage. The stimulation results of finite-difference time-domain (FDTD) display that too large or too small spacing lead to the reduced light extracted efficiency (LEE) of LEDs. Under a driving current 350 mA, themore » external quantum efficiencies (EQE) of GaN-based LEDs grown on NPSSs with 0-nm, 50-nm, and 120-nm spacing increase by 43.3%, 50.6%, and 39.1%, respectively, compared to that on flat sapphire substrate (FSS). The optimized pattern spacing is 50 nm for the NPSS with 600-nm pattern period.« less
NASA Astrophysics Data System (ADS)
Skuza, J. R.; Scott, D. W.; Pradhan, A. K.
2015-11-01
We investigate the structural and electronic properties of VO2 thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO2 film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO2, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO2 film growth with SMTs that can be easily tailored for device applications.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gillinger, M., E-mail: manuel.gillinger@tuwien.ac.at; Knobloch, T.; Schneider, M.
2016-06-06
This paper investigates the performance of surface acoustic wave (SAW) devices consisting of reactively sputter deposited scandium doped aluminum nitride (Sc{sub x}Al{sub 1-x}N) thin films as piezoelectric layers on sapphire substrates for wireless sensor or for RF-MEMS applications. To investigate the influence of piezoelectric film thickness on the device properties, samples with thickness ranging from 500 nm up to 3000 nm are fabricated. S{sub 21} measurements and simulations demonstrate that the phase velocity is predominantly influenced by the mass density of the electrode material rather than by the thickness of the piezoelectric film. Additionally, the wave propagation direction is varied by rotatingmore » the interdigital transducer structures with respect to the crystal orientation of the substrate. The phase velocity is about 2.5% higher for a-direction compared to m-direction of the sapphire substrate, which is in excellent agreement with the difference in the anisotropic Young's modulus of the substrate corresponding to these directions.« less
Nam, Hanyeob; Kim, Hong-Seok; Han, Jae-Hee; Kwon, Sang Jik; Cho, Eou Sik
2018-09-01
As direct formation of p-type two-dimensional transition metal dichalcogenides (TMDC) films on substrates, tungsten disulfide (WS2) thin films were deposited onto sapphire glass substrate through shadow mask patterns by radio-frequency (RF) sputtering at different sputtering powers ranging from 60 W to 150 W and annealed by rapid thermal processing (RTP) at various high temperatures ranging from 500 °C to 800 °C. Based on scanning electron microscope (SEM) images and Raman spectra, better surface roughness and mode dominant E12g and A1g peaks were found for WS2 thin films prepared at higher RF sputtering powers. It was also possible to obtain high mobilities and carrier densities for all WS2 thin films based on results of Hall measurements. Process conditions for these WS2 thin films on sapphire substrate were optimized to low RF sputtering power and high temperature annealing.
NASA Astrophysics Data System (ADS)
Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang
2018-05-01
High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.
NASA Astrophysics Data System (ADS)
Dong, Peng; Yan, Jianchang; Wang, Junxi; Zhang, Yun; Geng, Chong; Wei, Tongbo; Cong, Peipei; Zhang, Yiyun; Zeng, Jianping; Tian, Yingdong; Sun, Lili; Yan, Qingfeng; Li, Jinmin; Fan, Shunfei; Qin, Zhixin
2013-06-01
We first report AlGaN-based deep ultraviolet light-emitting diodes (UV-LEDs) grown on nano-patterned sapphire substrates (NPSS) prepared through a nanosphere lithography technique. The AlN coalescence thickness on NPSS is only 3 μm due to AlN's nano-scaled lateral growth, which also leads to low dislocation densities in AlN and epi-layers above. On NPSS, the light-output power of a 282-nm UV-LED reaches 3.03 mW at 20 mA with external quantum efficiency of 3.45%, exhibiting 98% better performance than that on flat sapphire. Temperature-dependent photoluminescence reveals this significant enhancement to be a combination of higher internal quantum efficiency and higher light extraction efficiency.
Evolution of the sapphire industry: Rubicon Technology and Gavish
NASA Astrophysics Data System (ADS)
Harris, Daniel C.
2009-05-01
A. Verneuil developed flame fusion to grow sapphire and ruby on a commercial scale around 1890. Flame fusion was further perfected by Popov in the Soviet Union in the 1930s and by Linde Air Products Co. in the U.S. during World War II. Union Carbide Corp., the successor to Linde, developed Czochralski crystal growth for sapphire laser materials in the 1960s. Stepanov in the Soviet Union published his sapphire growth method in 1959. Edge-Defined Film-Fed Growth (EFG), which is similar to the Stepanov method, was developed by H. Labelle in the U. S. in the 1960s and 1970s. The Heat Exchanger Method (HEM), invented by F. Schmid and D. Viechnicki in 1967 was commercialized in the 1970s. Gradient solidification was invented in Israel in the 1970s by J. Makovsky. The Horizontal Directional Solidification Method (HDSM) proposed by Kh. S. Bagdasorov in the Soviet Union in the 1960s was further developed at the Institute for Single Crystals in Ukraine. Kyropoulos growth of sapphire, known as GOI crystal growth in the Soviet Union, was developed by M. Musatov at the State Optical Institute in St. Petersburg in the 1970s and 1980s. At the Institute for Single Crystals in Ukraine, E. Dobrovinskaya characterized Verneuil, Czochralsky, Bagdasarov, and GOI sapphire. In 1995, she emigrated to the United States and joined S&R Rubicon, founded near Chicago by R. Mogilevsky initially to import sapphire and ruby. Mogilevsky began producing sapphire by the Kyropoulos method in 1999. In 2000 the company name was changed to Rubicon Technology. Today, Dobrovinskaya is Chief Scientist and Rubicon produces high quality Kyropoulos sapphire substrates for solid-state lighting. In 1995, H. Branover of Ben Gurion University and a sole investor founded Gavish, which is Hebrew for "crystal." They invited another veteran of the Ukrainian Institute for Single Crystals, V. Pishchik, to become Chief Scientist. Under Pishchik's technical leadership and J. Sragowicz's business leadership, Gavish now
Modern trends in crystal growth and new applications of sapphire
NASA Astrophysics Data System (ADS)
Akselrod, Mark S.; Bruni, Frank J.
2012-12-01
We provide an overview of the latest market trends and modern competing methods of sapphire crystal growth and the application of sapphire wafers as LED substrates. Almost all methods of high temperature growth from the melt are suitable for sapphire production, but each of these methods has its advantages and disadvantages depending on the application and required finished product form factor. Special attention is paid to the review of defects and imperfections that allow the engineering of new active devices based on sapphire.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Flemish, Joseph; Soer, Wouter
2015-11-30
Patterned sapphire substrate (PSS) technology has proven to be an effective approach to improve efficacy and reduce cost of light-emitting diodes (LEDs). The volume emission from the transparent substrate leads to high package efficiency, while the simple and robust architecture of PSS-based LEDs enables low cost. PSS substrates have gained wide use in mid-power LEDs over the past years. In this project, Lumileds has developed and industrialized PSS and epitaxy technology for high- power flip-chip LEDs to bring these benefits to a broader range of applications and accelerate the adoption of energy-efficient solid-state lighting (SSL). PSS geometries were designed formore » highly efficient light extraction in a flip-chip architecture and high-volume manufacturability, and corresponding sapphire patterning and epitaxy manufacturing processes were integrally developed. Concurrently, device and package architectures were developed to take advantage of the PSS flip-chip die in different types of products that meet application needs. The developed PSS and epitaxy technology has been fully implemented in manufacturing at Lumileds’ San Jose, CA location, and incorporated in illumination-grade LED products that have been successfully introduced to the market, including LUXEON Q and LUXEON FlipChip White.« less
Growth and Crystal Orientation of ZnTe on m-Plane Sapphire with Nanofaceted Structure
NASA Astrophysics Data System (ADS)
Nakasu, Taizo; Sun, Wei-Che; Kobayashi, Masakazu; Asahi, Toshiaki
2017-04-01
ZnTe thin films on sapphire substrate with nanofaceted structure have been studied. The nanofaceted structure of the m-plane (10-10) sapphire was obtained by heating the substrate at above 1100°C in air, and the r-plane (10-12) and S-plane (1-101) were confirmed. ZnTe layers were prepared on the nanofaceted m-plane sapphire substrates by molecular beam epitaxy (MBE). The effect of the nanofaceted structure on the orientation of the thin films was examined based on x-ray diffraction (XRD) pole figures. Transmission electron microscopy (TEM) was also employed to characterize the interface structures. The ZnTe layer on the nanofaceted m-plane sapphire substrate exhibited (331)-plane orientation, compared with (211)-plane without the nanofaceted structure. After thermal treatment, the m-plane surface vanished and (211) layer could not be formed because of the lack of surface lattice matching. On the other hand, (331)-plane thin film was formed on the nanofaceted m-plane sapphire substrate, since the (111) ZnTe domains were oriented on the S-facet. The orientation of the ZnTe epilayer depended on the atomic ordering on the surface and the influence of the S-plane.
A conduction model for contacts to Si-doped AlGaN grown on sapphire and single-crystalline AlN
NASA Astrophysics Data System (ADS)
Haidet, Brian B.; Bryan, Isaac; Reddy, Pramod; Bryan, Zachary; Collazo, Ramón; Sitar, Zlatko
2015-06-01
Ohmic contacts to AlGaN grown on sapphire substrates have been previously demonstrated for various compositions of AlGaN, but contacts to AlGaN grown on native AlN substrates are more difficult to obtain. In this paper, a model is developed that describes current flow through contacts to Si-doped AlGaN. This model treats the current through reverse-biased Schottky barriers as a consequence of two different tunneling-dependent conduction mechanisms in parallel, i.e., Fowler-Nordheim emission and defect-assisted Frenkel-Poole emission. At low bias, the defect-assisted tunneling dominates, but as the potential across the depletion region increases, tunneling begins to occur without the assistance of defects, and the Fowler-Nordheim emission becomes the dominant conduction mechanism. Transfer length method measurements and temperature-dependent current-voltage (I-V) measurements of Ti/Al-based contacts to Si-doped AlGaN grown on sapphire and AlN substrates support this model. Defect-assisted tunneling plays a much larger role in the contacts to AlGaN on sapphire, resulting in nearly linear I-V characteristics. In contrast, contacts to AlGaN on AlN show limited defect-assisted tunneling appear to be only semi-Ohmic.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Skuza, J. R., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu; Scott, D. W.; Pradhan, A. K., E-mail: jrskuza@nsu.edu, E-mail: apradhan@nsu.edu
2015-11-21
We investigate the structural and electronic properties of VO{sub 2} thin films on c-plane sapphire substrates with three different surface morphologies to control the strain at the substrate-film interface. Only non-annealed substrates with no discernible surface features (terraces) provided a suitable template for VO{sub 2} film growth with a semiconductor-metal transition (SMT), which was much lower than the bulk transition temperature. In addition to strain, oxygen vacancy concentration also affects the properties of VO{sub 2}, which can be controlled through deposition conditions. Oxygen plasma-assisted pulsed laser deposition allows favorable conditions for VO{sub 2} film growth with SMTs that can bemore » easily tailored for device applications.« less
Measurement and thermal modeling of sapphire substrate temperature at III-Nitride MOVPE conditions
Creighton, J. Randall; Coltrin, Michael E.; Figiel, Jeffrey J.
2017-04-01
Here, growth rates and alloy composition of AlGaN grown by MOVPE is often very temperature dependent due to the presence of gas-phase parasitic chemical processes. These processes make wafer temperature measurement highly important, but in fact such measurements are very difficult because of substrate transparency in the near- IR (~900 nm) where conventional pyrometers detect radiation. The transparency problem can be solved by using a mid-IR pyrometer operating at a wavelength (~7500 nm) where sapphire is opaque. We employ a mid- IR pyrometer to measure the sapphire wafer temperature and simultaneously a near-IR pyrometer to measure wafer pocket temperature, whilemore » varying reactor pressure in both a N 2 and H 2 ambient. Near 1300 °C, as the reactor pressure is lowered from 300 Torr to 10 Torr the wafer temperature drops dramatically, and the ΔT between the pocket and wafer increases from ~20 °C to ~250 °C. Without the mid-IR pyrometer the large wafer temperature change with pressure would not have been noted. In order to explain this behavior we have developed a quasi-2D thermal model that includes a proper accounting of the pressure-dependent thermal contact resistance, and also accounts for sapphire optical transmission. The model and experimental results demonstrate that at most growth conditions the majority of the heat is transported from the wafer pocket to the wafer via gas conduction, in the free molecular flow limit. In this limit gas conductivity is independent of gap size but first order in pressure, and can quantitatively explain results from 20 to 300 Torr. Further analysis yields a measure of the thermal accommodation coefficients; α(H 2) =0.23, α(N 2) =0.50, which are in the range typically measured.« less
Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD
NASA Astrophysics Data System (ADS)
O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.
2018-04-01
High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.
NASA Astrophysics Data System (ADS)
Markeviciute, Vilda; White, Nicholas; Troian, Sandra
2017-11-01
Although spontaneous capillary flow can be an especially rapid process in slender open microchannels resembling V-grooves, enhanced flow control is possible through implementation of electric field distributions which generate opposing electrohydrodynamic pressures along the air/liquid interface to modulate the capillary pressures. Important fundamental work by Romero and Yost (1996) and Weislogel(1996) has elucidated the behavior of Newtonian films in slender V-grooves driven to flow solely by the streamwise change in capillary pressure due to the change in radius of curvature of the circular arc describing the interface of wetting or non-wetting fluids. Here we augment the Romero and Yost model with inclusion of Maxwell stresses for perfectly conducting wetting films and examine which electric field distributions allow formation of steady state film shapes for various inlet and outlet boundary conditions. We investigate the stability of these steady solutions to small perturbations in film thickness using a generalized stability analysis. These results reveal how the ratio of Maxwell to capillary stresses influences the degree of linearized transient growth or decay for thin films confined to flow within an open V-groove. Funding from the 2017 Caltech Summer Undergraduate Research Fellowship Program (Markeviciute) as well as a 2017 NASA Space Technology Research Fellowship (White) is gratefully acknowledged.
Defect reduction in GaN on dome-shaped patterned-sapphire substrates
NASA Astrophysics Data System (ADS)
Chen, Po-Hsun; Su, Vin-Cent; Wu, Shang-Hsuan; Lin, Ray-Ming; Kuan, Chieh-Hsiung
2018-02-01
This paper demonstrates the behavior of defect reduction in un-doped GaN (u-GaN) grown on a commercial dome-shaped patterned-sapphire substrate (CDPSS). Residual strain inside the u-GaN grown on the CDPSS have been investigated as well. As verified by the experimentally measured data, the limited growth rate of the u-GaN on the sidewall of the CDPSS enhances the lateral growth of the GaN on the trench region while increasing the growth time. This subsequently contributes to improve the crystalline quality of the GaN on the CDPSS. The more prominent dislocations occur in the u-GaN epilayers on the CDPSS after reaching the summit of the accumulated strain inside the epilayers. Such prominent bent dislocations improve their blocking abilities, followed by the achievement of the better crystalline quality for the growth of the u-GaN on the CDPSS.
NASA Astrophysics Data System (ADS)
Dong, Peng; Yan, Jianchang; Zhang, Yun; Wang, Junxi; Zeng, Jianping; Geng, Chong; Cong, Peipei; Sun, Lili; Wei, Tongbo; Zhao, Lixia; Yan, Qingfeng; He, Chenguang; Qin, Zhixin; Li, Jinmin
2014-06-01
We report high-performance AlGaN-based deep ultraviolet light-emitting diodes grown on nano-patterned sapphire substrates (NPSS) using metal-organic chemical vapor deposition. By nanoscale epitaxial lateral overgrowth on NPSS, 4-μm AlN buffer layer has shown strain relaxation and a coalescence thickness of only 2.5 μm. The full widths at half-maximum of X-ray diffraction (002) and (102) ω-scan rocking curves of AlN on NPSS are only 69.4 and 319.1 arcsec. The threading dislocation density in AlGaN-based multi-quantum wells, which are grown on this AlN/NPSS template with a light-emitting wavelength at 283 nm at room temperature, is reduced by 33% compared with that on flat sapphire substrate indicated by atomic force microscopy measurements, and the internal quantum efficiency increases from 30% to 43% revealed by temperature-dependent photoluminescent measurement.
Magnetoresistivity of thin YBa2Cu3O7-δ films on sapphire substrate
NASA Astrophysics Data System (ADS)
Probst, Petra; Il'in, Konstantin; Engel, Andreas; Semenov, Alexei; Hübers, Heinz-Wilhelm; Hänisch, Jens; Holzapfel, Bernhardt; Siegel, Michael
2012-09-01
Magnetoresistivity of YBa2Cu3O7-δ films with thicknesses between 7 and 100 nm deposited on CeO2 and PrBa2Cu3O7-δ buffer layers on sapphire substrate has been measured to analyze the temperature dependence of the second critical magnetic field Bc2. To define Bc2, the mean-field transition temperature Tc was evaluated by fitting the resistive transition in zero magnetic field with the fluctuation conductivity theory of Aslamazov and Larkin. At T → Tc the Bc2(T) dependence shows a crossover from downturn to upturn curvature with the increase in film thickness.
InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate.
Ke, Wen-Cheng; Lee, Fang-Wei; Chiang, Chih-Yung; Liang, Zhong-Yi; Chen, Wei-Kuo; Seong, Tae-Yeon
2016-12-21
A hybrid patterned sapphire substrate (hybrid-PSS) was prepared using an anodic aluminum oxide etching mask to transfer nanopatterns onto a conventional patterned sapphire substrate with microscale patterns (bare-PSS). The threading dislocation (TD) suppression of light-emitting diodes (LEDs) grown on a hybrid-PSS (HP-LED) exhibits a smaller reverse leakage current compared with that of LEDs grown on a bare-PSS (BP-LED). The strain-free GaN buffer layer and fully strained InGaN active layer were evidenced by cross-sectional Raman spectra and reciprocal space mapping of the X-ray diffraction intensity for both samples. The calculated piezoelectric fields for both samples are close, implying that the quantum-confined Stark effect was not a dominant mechanism influencing the electroluminescence (EL) peak wavelength under a high injection current. The bandgap shrinkage effect of the InGaN well layer was considered to explain the large red-shifted EL peak wavelength under high injection currents. The estimated LED chip temperatures rise from room temperature to 150 °C and 75 °C for BP-LED and HP-LED, respectively, at a 600-mA injection current. This smaller temperature rise of the LED chip is attributed to the increased contact area between the sapphire and the LED structural layer because of the embedded nanopattern. Although the chip generates more heat at high injection currents, the accumulated heat can be removed to outside the chip effectively. The high diffuse reflection (DR) rate of hybrid-PSS increases the escape probability of photons, resulting in an increase in the viewing angle of the LEDs from 130° to 145°. The efficiency droop was reduced from 46% to 35%, effects which can be attributed to the elimination of TDs and strain relaxation by embedded nanopatterns. In addition, the light output power of HP-LED at 360-mA injection currents exhibits a ∼ 22.3% enhancement, demonstrating that hybrid-PSSs are beneficial to apply in high-power LEDs.
NASA Astrophysics Data System (ADS)
Kim, Youngwoo; Moyen, Eric; Yi, Hemian; Avila, José; Chen, Chaoyu; Asensio, Maria C.; Lee, Young Hee; Pribat, Didier
2018-07-01
We propose a novel growth technique, in which graphene is synthesized on capped Cu thin films deposited on c-plane sapphire. The cap is another sapphire plate which is just laid upon the Cu thin film, in direct contact with it. Thanks to this ‘contact cap’, Cu evaporation can be suppressed at high temperature and the 400 nm-thick Cu films can be annealed above 1000 °C, resulting in (1 1 1)-oriented grains of millimeter size. Following this high temperature annealing, graphene is grown by chemical vapor deposition during the same pump-down operation, without removing the contact cap. The orientation and doping type of the as-grown graphene were first studied, using low energy electron diffraction, as well as high resolution angle-resolved photoemission spectroscopy. In particular, the orientation relationships between the graphene and copper thin film with respect to the sapphire substrate were precisely determined. We find that the graphene sheets exhibit a minimal rotational disorder, with ~90% of the grains aligned along the copper high symmetry direction. Detailed transport measurements were also performed using field-effect transistor structures. Carrier mobility values as high as 8460 cm2 V‑1 s‑1 have been measured on top gate transistors fabricated directly on the sapphire substrate, by etching the Cu film from underneath the graphene sheets. This is by far the best carrier mobility value obtained to date for graphene sheets synthesized on a thin film-type metal substrate.
High T(sub c) Superconducting Bolometer on Chemically Etched 7 Micrometer Thick Sapphire
NASA Technical Reports Server (NTRS)
Lakew, B.; Brasunas, J. C.; Pique, A.; Fettig, R.; Mott, B.; Babu, S.; Cushman, G. M.
1997-01-01
A transition-edge IR detector, using a YBa2Cu3O(7-x) (YBCO) thin film deposited on a chemically etched, 7 micrometer thick sapphire substrate has been built. To our knowledge it is the first such high T(sub c) superconducting (HTS) bolometer on chemically thinned sapphire. The peak optical detectivity obtained is l.2 x 10(exp 10) cmHz(sup 1/2)/W near 4Hz. Result shows that it is possible to obtain high detectivity with thin films on etched sapphire with no processing after the deposition of the YBCO film. We discuss the etching process and its potential for micro-machining sapphire and fabricating 2-dimensional detector arrays with suspended sapphire membranes. A 30 micrometer thick layer of gold black provided IR absorption. Comparison is made with the current state of the art on silicon substrates.
NASA Astrophysics Data System (ADS)
Sun, Yongjian; Trieu, Simeon; Yu, Tongjun; Chen, Zhizhong; Qi, Shengli; Tian, Pengfei; Deng, Junjing; Jin, Xiaoming; Zhang, Guoyi
2011-08-01
Vertical structure LEDs have been fabricated with a novel light extraction composite surface structure composed of a micron grating and nano-structure. The composite surface structure was generated by using a modified YAG laser lift-off technique, separating the wafers from cone-shaped patterned sapphire substrates. LEDs thus fabricated showed the light output power increase about 1.7-2.5 times when compared with conventional vertical structure LEDs grown on plane sapphire substrates. A three-dimensional finite difference time domain method was used to simulate this new kind of LED device. It was determined that nano-structures in composite surface patterns play a key role in the improvement of light extraction efficiency of LEDs.
Solar cell with doped groove regions separated by ridges
Molesa, Steven Edward; Pass, Thomas; Kraft, Steve
2017-01-31
Solar cells with doped groove regions separated by ridges and methods of fabricating solar cells are described. In an example, a solar cell includes a substrate having a surface with a plurality of grooves and ridges. A first doped region of a first conductivity type is disposed in a first of the grooves. A second doped region of a second conductivity type, opposite the first conductivity type, is disposed in a second of the grooves. The first and second grooves are separated by one of the ridges.
NASA Astrophysics Data System (ADS)
Dimastrodonato, Valeria; Pelucchi, Emanuele; Zestanakis, Panagiotis A.; Vvedensky, Dimitri D.
2013-07-01
We present a theoretical model of the formation of self-limited (Al)GaAs quantum wires within V-grooves on GaAs(001) substrates during metalorganic vapor-phase epitaxy. We identify the facet-dependent rates of the kinetic processes responsible for the formation of the self-limiting profile, which is accompanied by Ga segregation along the axis perpendicular to the bottom of the original template, and analyze their interplay with the facet geometry in the transient regime. A reduced model is adopted for the evolution of the patterned profile, as determined by the angle between the different crystallographic planes as a function of the growth conditions. Our results provide a comprehensive phenomenological understanding of the self-ordering mechanism on patterned surfaces which can be harnessed for designing the quantum optical properties of low-dimensional systems.
Modifications of Ti-6Al-4V surfaces by direct-write laser machining of linear grooves
NASA Astrophysics Data System (ADS)
Ulerich, Joseph P.; Ionescu, Lara C.; Chen, Jianbo; Soboyejo, Winston O.; Arnold, Craig B.
2007-02-01
As patients who receive orthopedic implants live longer and opt for surgery at a younger age, the need to extend the in vivo lifetimes of these implants has grown. One approach is to pattern implant surfaces with linear grooves, which elicit a cellular response known as contact guidance. Lasers provide a unique method of generating these surface patterns because they are capable of modifying physical and chemical properties over multiple length scales. In this paper we explore the relationship between surface morphology and laser parameters such as fluence, pulse overlap (translation distance), number of passes, and machining environment. We find that using simple procedures involving multiple passes it is possible to manipulate groove properties such as depth, shape, sub-micron roughness, and chemical composition of the Ti-6Al-4V oxide layer. Finally, we demonstrate this procedure by machining several sets of grooves with the same primary groove parameters but varied secondary characteristics. The significance of the secondary groove characteristics is demonstrated by preliminary cell studies indicating that the grooves exhibit basic features of contact guidance and that the cell proliferation in these grooves are significantly altered despite their similar primary characteristics. With further study it will be possible to use specific laser parameters during groove formation to create optimal physical and chemical properties for improved osseointegration.
Electron Beam "Writes" Silicon On Sapphire
NASA Technical Reports Server (NTRS)
Heinemann, Klaus
1988-01-01
Method of growing silicon on sapphire substrate uses beam of electrons to aid growth of semiconductor material. Silicon forms as epitaxial film in precisely localized areas in micron-wide lines. Promising fabrication method for fast, densely-packed integrated circuits. Silicon deposited preferentially in contaminated substrate zones and in clean zone irradiated by electron beam. Electron beam, like surface contamination, appears to stimulate decomposition of silane atmosphere.
Chen, Mingjun; Zheng, Ting; Wu, Chunya; Xing, Cheng
2014-09-01
The early adsorption stages of collagen onto nano-grooved rutile surface without hydroxylation were studied using molecular dynamics and steered MD simulations. On the basis of plane rutile (110), two kinds of models have been adopted: single groove and parallel grooves along [1-11] crystal orientation with various width dimensions. Initially, collagens were parallel or perpendicular to the groove orientation, respectively, in order to investigate the influence of groove width on collagen adsorption. The simulation result suggests that surface grooves could exert a strong effect on collagen adsorption: when collagen was parallel to the groove direction, adsorption was favored if the groove width matched well with the dimension of collagen. However, adsorption strength may decrease as the groove width expanded. As for the condition of collagen perpendicular to the groove orientation, collagen was difficult to bend and insert into grooves in the free adsorption procedure. But the steered MD simulation results reveal that more energy was consumed for collagen to insert into narrower grooves which may be interpreted as strong barrier for adsorption. We believe that adsorption will be favored if appropriate dimension match between dimension of collagen and the groove width was approached. Copyright © 2014 Elsevier B.V. All rights reserved.
Generalized Stability Analysis of Capillary Flow in Slender V-Grooves
NASA Astrophysics Data System (ADS)
White, Nicholas; Troian, Sandra
2017-11-01
Spontaneous capillary flow, an especially rapid process in slender open microchannels resembling V-grooves, is of significant importance to many applications requiring passive robust flow control. Many types of biomedical devices for point-of-care use in developing countries are being designed around this principle. Important fundamental work by Romero and Yost (1996) and Weislogel (1996) elucidated the behavior of Newtonian films in slender V-grooves driven to flow by the streamwise change in capillary pressure due to the change in radius of curvature of the circular arc describing the interface of wetting or non-wetting fluids. Self-similar solutions describing Washburn type dynamics were found but other solutions are possible. Here we extend the Romero and Yost model to include a variety of inlet and outlet boundary conditions and examine the transient growth and generalized stability of perturbations to steady state and self-similar flows. Although most cases examined for wetting fluids exhibit robust stability against small perturbations, some exceptions reveal unstable flow. In total, these results support decades of experimental work which has found this method of flow control to be especially reliable, robust and self-healing. The authors gratefully acknowledge financial support from the 2016 NASA/Jet Propulsion Laboratory President's and Director's Fund as well as a 2017 NASA Space Technology Research Fellowship.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Chen, Meei-Ru; Chen, Hou-Guang; Kao, Hui-Ling, E-mail: hlkao@cycu.edu.tw
2015-05-15
AlN thin films have been deposited directly on c-plane sapphire substrates at low temperatures by a helicon sputtering system. The structural quality of AlN epitaxial films was characterized by x-ray diffractometry and transmission electron microscopy. The films exhibit smooth surface with root-mean-square roughness as small as 0.7 nm evaluated by atomic force microscope. The optical transmittance spectra show a steep absorption edge at the wavelength of 200 nm and a high transmittance of over 80% in the visible range. The band-edge transition (6.30 eV) of AlN film was observed in the cathodoluminescence spectrum recorded at 11 K. The spectral response of metal–semiconductor–metal photodetectors constructedmore » with AlN/sapphire reveals the peak responsivity at 200 nm and a UV/visible rejection ratio of about two orders of magnitude. The results of this low temperature deposition suggest the feasibility of the epitaxial growth of AlN on sapphire substrates and the incorporation of the AlN films in the surface acoustic wave devices and the optical devices at deep ultraviolet region.« less
Nanoscale Plasmonic V-Groove Waveguides for the Interrogation of Single Fluorescent Bacterial Cells.
Lotan, Oren; Bar-David, Jonathan; Smith, Cameron L C; Yagur-Kroll, Sharon; Belkin, Shimshon; Kristensen, Anders; Levy, Uriel
2017-09-13
We experimentally demonstrate the interrogation of an individual Escherichia coli cell using a nanoscale plasmonic V-groove waveguide. Several different configurations were studied. The first involved the excitation of the cell in a liquid environment because it flows on top of the waveguide nanocoupler, while the obtained fluorescence is coupled into the waveguide and collected at the other nanocoupler. The other two configurations involved the positioning of the bacterium within the nanoscale waveguide and its excitation in a dry environment either directly from the top or through waveguide modes. This is achieved by taking advantage of the waveguide properties not only for light guiding but also as a mechanical tool for trapping the bacteria within the V-grooves. The obtained results are supported by a set of numerical simulations, shedding more light on the mechanism of excitation. This demonstration paves the way for the construction of an efficient bioplasmonic chip for diverse cell-based sensing applications.
Reduced cost and improved figure of sapphire optical components
NASA Astrophysics Data System (ADS)
Walters, Mark; Bartlett, Kevin; Brophy, Matthew R.; DeGroote Nelson, Jessica; Medicus, Kate
2015-10-01
Sapphire presents many challenges to optical manufacturers due to its high hardness and anisotropic properties. Long lead times and high prices are the typical result of such challenges. The cost of even a simple 'grind and shine' process can be prohibitive. The high precision surfaces required by optical sensor applications further exacerbate the challenge of processing sapphire thereby increasing cost further. Optimax has demonstrated a production process for such windows that delivers over 50% time reduction as compared to traditional manufacturing processes for sapphire, while producing windows with less than 1/5 wave rms figure error. Optimax's sapphire production process achieves significant improvement in cost by implementation of a controlled grinding process to present the best possible surface to the polishing equipment. Following the grinding process is a polishing process taking advantage of chemical interactions between slurry and substrate to deliver excellent removal rates and surface finish. Through experiments, the mechanics of the polishing process were also optimized to produce excellent optical figure. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. In addition to reducing the cost of producing large sapphire sensor windows, the grinding and polishing technology Optimax has developed aids in producing spherical sapphire components to better figure quality. Through specially developed polishing slurries, the peak-to-valley figure error of spherical sapphire parts is reduced by over 80%.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Xiao-Hang, E-mail: xli@gatech.edu, E-mail: dupuis@gatech.edu; Kao, Tsung-Ting; Satter, Md. Mahbub
2015-01-26
We demonstrate transverse-magnetic (TM) dominant deep-ultraviolet (DUV) stimulated emission from photo-pumped AlGaN multiple-quantum-well lasers grown pseudomorphically on an AlN/sapphire template by means of photoluminescence at room temperature. The TM-dominant stimulated emission was observed at wavelengths of 239, 242, and 243 nm with low thresholds of 280, 250, and 290 kW/cm{sup 2}, respectively. In particular, the lasing wavelength of 239 nm is shorter compared to other reports for AlGaN lasers grown on foreign substrates including sapphire and SiC. The peak wavelength difference between the transverse-electric (TE)-polarized emission and TM-polarized emission was approximately zero for the lasers in this study, indicating the crossover of crystal-fieldmore » split-off hole and heavy-hole valence bands. The rapid variation of polarization between TE- and TM-dominance versus the change in lasing wavelength from 243 to 249 nm can be attributed to a dramatic change in the TE-to-TM gain coefficient ratio for the sapphire-based DUV lasers in the vicinity of TE-TM switch.« less
Theoretical studies on lattice-oriented growth of single-walled carbon nanotubes on sapphire
NASA Astrophysics Data System (ADS)
Li, Zhengwei; Meng, Xianhong; Xiao, Jianliang
2017-09-01
Due to their excellent mechanical and electrical properties, single-walled carbon nanotubes (SWNTs) can find broad applications in many areas, such as field-effect transistors, logic circuits, sensors and flexible electronics. High-density, horizontally aligned arrays of SWNTs are essential for high performance electronics. Many experimental studies have demonstrated that chemical vapor deposition growth of nanotubes on crystalline substrates such as sapphire offers a promising route to achieve such dense, perfectly aligned arrays. In this work, a theoretical study is performed to quantitatively understand the van der Waals interactions between SWNTs and sapphire substrates. The energetically preferred alignment directions of SWNTs on A-, R- and M-planes and the random alignment on the C-plane predicted by this study are all in good agreement with experiments. It is also shown that smaller SWNTs have better alignment than larger SWNTs due to their stronger interaction with sapphire substrate. The strong vdW interactions along preferred alignment directions can be intuitively explained by the nanoscale ‘grooves’ formed by atomic lattice structures on the surface of sapphire. This study provides important insights to the controlled growth of nanotubes and potentially other nanomaterials.
Processing of high-precision ceramic balls with a spiral V-groove plate
NASA Astrophysics Data System (ADS)
Feng, Ming; Wu, Yongbo; Yuan, Julong; Ping, Zhao
2017-03-01
As the demand for high-performance bearings gradually increases, ceramic balls with excellent properties, such as high accuracy, high reliability, and high chemical durability used, are extensively used for highperformance bearings. In this study, a spiral V-groove plate method is employed in processing high-precision ceramic balls. After the kinematic analysis of the ball-spin angle and enveloped lapping trajectories, an experimental rig is constructed and experiments are conducted to confirm the feasibility of this method. Kinematic analysis results indicate that the method not only allows for the control of the ball-spin angle but also uniformly distributes the enveloped lapping trajectories over the entire ball surface. Experimental results demonstrate that the novel spiral Vgroove plate method performs better than the conventional concentric V-groove plate method in terms of roundness, surface roughness, diameter difference, and diameter decrease rate. Ceramic balls with a G3-level accuracy are achieved, and their typical roundness, minimum surface roughness, and diameter difference are 0.05, 0.0045, and 0.105 μm, respectively. These findings confirm that the proposed method can be applied to high-accuracy and high-consistency ceramic ball processing.
Strain Evolution of Annealed Hydrogen-Implanted (0001) Sapphire
NASA Astrophysics Data System (ADS)
Wong, Christine Megan
Exfoliation is a technique used to remove a thin, uniform layer of material from the bulk that involves the annealing of hydrogen ion-implanted materials in order to initiate defect nucleation and growth leading to guided crack propagation. This study presents an investigation into the annealing process required to initiate blistering (an essential precursor to exfoliation) in (0001) sapphire implanted at room temperature with hydrogen ions. Triple axis x-ray diffraction was used to characterize the evolution of the implanted layer for single crystal (0001) sapphire substrates implanted at room temperature at 360 keV with either a 5x1016 cm -2 or 8x1016 cm-2 dose of hydrogen ions. A simulation of the ion distribution in TRIM estimated that the projected range and thickness of the implanted layer for both doses was approximately 2.2 mum. Following implantation, the implanted sapphire was annealed using a two-step annealing procedure. The first step was performed at a lower temperature, ideally to nucleate and coarsen defects. Temperatures investigated ranged from 550 - 650 °C. The second step was performed at a higher temperature (800 °C) to induce further defect coarsening and surface blistering. After all annealing steps, triple axis o/2theta and o scans were taken to observe any changes in the diffraction profile - namely, any reduction in the amplitude and shift in the location of the fringes associated with strain in the crystal - which would correlate with defect growth and nucleation. It was found that significant strain fringe reduction first occurred after annealing at 650 °C for 8 hours for both doses; however, it was not clear whether or not this strain reduction was due primarily to hydrogen diffusion or to recovery of other defects induced during the ion implantation. The o/2theta curves were then fit using Bede RADS in order to quantify the strain within the crystal and confirm the reduction of the strained layer within the crystal. Finally
Photodetectors using III-V nitrides
Moustakas, Theodore D.; Misra, Mira
1997-01-01
A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector.
Li, Heng; Cheng, Hui-Yu; Chen, Wei-Liang; Huang, Yi-Hsin; Li, Chi-Kang; Chang, Chiao-Yun; Wu, Yuh-Renn; Lu, Tien-Chang; Chang, Yu-Ming
2017-03-30
We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the In x Ga 1-x N/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E 2 (high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the In x Ga 1-x N/GaN MQWs active layer.
Li, Heng; Cheng, Hui-Yu; Chen, Wei-Liang; Huang, Yi-Hsin; Li, Chi-Kang; Chang, Chiao-Yun; Wu, Yuh-Renn; Lu, Tien-Chang; Chang, Yu-Ming
2017-01-01
We performed depth-resolved PL and Raman spectral mappings of a GaN-based LED structure grown on a patterned sapphire substrate (PSS). Our results showed that the Raman mapping in the PSS-GaN heterointerface and the PL mapping in the InxGa1−xN/GaN MQWs active layer are spatially correlated. Based on the 3D construction of E2(high) Raman peak intensity and frequency shift, V-shaped pits in the MQWs can be traced down to the dislocations originated in the cone tip area of PSS. Detail analysis of the PL peak distribution further revealed that the indium composition in the MQWs is related to the residual strain propagating from the PSS-GaN heterointerface toward the LED surface. Numerical simulation based on the indium composition distribution also led to a radiative recombination rate distribution that shows agreement with the experimental PL intensity distribution in the InxGa1−xN/GaN MQWs active layer. PMID:28358119
NASA Astrophysics Data System (ADS)
Jinno, Daiki; Otsuki, Shunya; Sugimori, Shogo; Daicho, Hisayoshi; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
2018-02-01
To reduce the number of threading dislocations (TDs) in nonpolar a-plane GaN (a-GaN) epi-layers grown on flat r-plane sapphire substrates (r-FSS), we investigated the effects on the crystalline quality of the a-GaN epi-layers of high-density patterned r-plane sapphire substrates (r-HPSS), the patterns of which were placed at intervals of several hundred nanometers. Two types of r-HPSS, the patterns of which had diameters and heights on the order of several hundred nanometers (r-NHPSS) or several micrometers (r-MHPSS), were prepared with conventional r-FSS. The effect of these r-HPSS on the a-GaN epi-layers was demonstrated by evaluating the surface morphology and the crystalline quality of the epi-layers. The surfaces of the a-GaN epi-layer grown on r-FSS and r-NHPSS were pit-free and mirror-like, whereas the surface of the a-GaN epi-layer grown on r-MHPSS was very rough due to the large, irregular GaN islands that grew on the patterns, mainly at the initial growth stage. The crystalline quality of the a-GaN epi-layer grown on r-NHPSS was better than that of the a-GaN epi-layer grown on r-FSS. We confirmed that there were fewer TDs in the a-GaN epi-layer grown on r-NHPSS than there were in the a-GaN epi-layer grown on r-FSS. The TDs propagating to the surface in a-GaN epi-layer grown on r-NHPSS were mainly generated on the flat sapphire regions between the patterns. Interestingly, it was also found that the TDs that propagated to the surface concentrated with a periodic pitch along the c-axis direction. The TD densities of a-GaN epi-layers grown on r-FSS and r-NHPSS were estimated to be approximately 5.0 × 1010 and 1.5 × 109 cm-2, respectively. This knowledge will contribute to the further development of a-GaN epi-layers for high-performance devices.
Photodetectors using III-V nitrides
Moustakas, T.D.; Misra, M.
1997-10-14
A photodetector using a III-V nitride and having predetermined electrical properties is disclosed. The photodetector includes a substrate with interdigitated electrodes formed on its surface. The substrate has a sapphire base layer, a buffer layer formed from a III-V nitride and a single crystal III-V nitride film. The three layers are formed by electron cyclotron resonance microwave plasma-assisted molecular beam epitaxy (ECR-assisted MBE). Use of the ECR-assisted MBE process allows control and predetermination of the electrical properties of the photodetector. 24 figs.
NASA Technical Reports Server (NTRS)
George, T.; Pike, W. T.; Khan, M. A.; Kuznia, J. N.; Chang-Chien, P.
1994-01-01
The initial growth by low pressure metalorganic chemical vapor deposition and subsequent thermal annealing of AIN and GaN epitaxial layers on SiC and sapphire substrates is examined using high resolution transmission electron microscopy and atomic force microscopy.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Sung Bo, E-mail: bolee@snu.ac.kr; Han, Heung Nam, E-mail: hnhan@snu.ac.kr; Lee, Dong Nyung
Much research has been done to reduce dislocation densities for the growth of GaN on sapphire, but has paid little attention to the elastic behavior at the GaN/sapphire interface. In this study, we have examined effects of the addition of Si to a sapphire substrate on its elastic property and on the growth of GaN deposit. Si atoms are added to a c-plane sapphire substrate by ion implantation. The ion implantation results in scratches on the surface, and concomitantly, inhomogeneous distribution of Si. The scratch regions contain a higher concentration of Si than other regions of the sapphire substrate surface,more » high-temperature GaN being poorly grown there. However, high-temperature GaN is normally grown in the other regions. The GaN overlayer in the normally-grown regions is observed to have a lower TD density than the deposit on the bare sapphire substrate (with no Si accommodated). As compared with the film on an untreated, bare sapphire, the cathodoluminescence defect density decreases by 60 % for the GaN layer normally deposited on the Si-ion implanted sapphire. As confirmed by a strain mapping technique by transmission electron microscopy (geometric phase analysis), the addition of Si in the normally deposited regions forms a surface layer in the sapphire elastically more compliant than the GaN overlayer. The results suggest that the layer can largely absorb the misfit strain at the interface, which produces the overlayer with a lower defect density. Our results highlight a direct correlation between threading-dislocation density in GaN deposits and the elastic behavior at the GaN/sapphire interface, opening up a new pathway to reduce threading-dislocation density in GaN deposits.« less
NASA Astrophysics Data System (ADS)
Ohtsuka, Makoto; Takeuchi, Hiroto; Fukuyama, Hiroyuki
2016-05-01
Aluminum nitride (AlN) is a promising material for use in applications such as deep-ultraviolet light-emitting diodes (UV-LEDs) and surface acoustic wave (SAW) devices. In the present study, the effect of sputtering pressure on the surface morphology, crystalline quality, and residual stress of AlN films deposited at 823 K on nitrided a-plane sapphire substrates, which have high-crystalline-quality c-plane AlN thin layers, by pulsed DC reactive sputtering was investigated. The c-axis-oriented AlN films were homoepitaxially grown on nitrided sapphire substrates at sputtering pressures of 0.4-1.5 Pa. Surface damage of the AlN sputtered films increased with increasing sputtering pressure because of arcing (abnormal electrical discharge) during sputtering. The sputtering pressure affected the crystalline quality and residual stress of AlN sputtered films because of a change in the number and energy of Ar+ ions and Al sputtered atoms. The crystalline quality of AlN films was improved by deposition with lower sputtering pressure.
NASA Astrophysics Data System (ADS)
Cho, H. K.; Krüger, O.; Külberg, A.; Rass, J.; Zeimer, U.; Kolbe, T.; Knauer, A.; Einfeldt, S.; Weyers, M.; Kneissl, M.
2017-12-01
We report on a chip design which allows the laser lift-off (LLO) of the sapphire substrate sustaining the epitaxial film of flip-chip mounted deep ultraviolet light emitting diodes. A nanosecond pulsed excimer laser with a wavelength of 248 nm was used for the LLO. A mechanically stable chip design was found to be the key to prevent crack formation in the epitaxial layers and material chipping during the LLO process. Stabilization was achieved by introducing a Ti/Au leveling layer that mechanically supports the fragile epitaxial film. The electrical and optical characterization of devices before and after the LLO process shows that the device performance did not degrade by the LLO.
A metal-insulator transition study of VO 2 thin films grown on sapphire substrates
Yu, Shifeng; Wang, Shuyu; Lu, Ming; ...
2017-12-15
In this paper, vanadium thin films were deposited on sapphire substrates by DC magnetron sputtering and then oxidized in a tube furnace filled with oxygen under different temperatures and oxygen flow rates. The significant influence of the oxygen flow rate and oxidation temperature on the electrical and structural properties of the vanadium oxide thin films were investigated systematically. It shows the pure vanadium dioxide (VO 2) state can only be obtained in a very narrow temperature and oxygen flow rate range. The resistivity change during the metal-insulator transition varies from 0.2 to 4 orders of magnitude depending on the oxidationmore » condition. Large thermal hysteresis during the metal-insulator phase transition was observed during the transition compared to the results in literature. Proper oxidation conditions can significantly reduce the thermal hysteresis. Finally, the fabricated VO 2 thin films showed the potential to be applied in the development of electrical sensors and other smart devices.« less
DOE Office of Scientific and Technical Information (OSTI.GOV)
Adikimenakis, A.; Aretouli, K. E.; Tsagaraki, K.
2015-06-28
The spontaneous growth of GaN nanopillars (NPs) by direct plasma-assisted molecular beam epitaxy on nitridated r-plane sapphire substrates has been studied. The emanation of metal-polarity NPs from inside an a-plane nonpolar GaN film was found to depend on both the substrate nitridation and the growth conditions. The density of NPs increased with increasing the duration of the nitridation process and the power applied on the radio-frequency plasma source, as well as the III/V flux ratio, while variation of the first two parameters enhanced the roughness of the substrate's surface. Transmission electron microscopy (TEM) techniques were employed to reveal the structuralmore » characteristics of the NPs and their nucleation mechanism from steps on the sapphire surface and/or interfacial semipolar GaN nanocrystals. Lattice strain measurements showed a possible Al enrichment of the first 5–6 monolayers of the NPs. By combining cross-sectional and plan-view TEM observations, the three-dimensional model of the NPs was constructed. The orientation relationship and interfacial accommodation between the NPs and the nonpolar a-plane GaN film were also elucidated. The NPs exhibited strong and narrow excitonic emission, suggesting an excellent structural quality.« less
High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array
Freitas, Barry L.
1998-01-01
An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver>4kW/cm2 of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources.
Epitaxial growth of HfS2 on sapphire by chemical vapor deposition and application for photodetectors
NASA Astrophysics Data System (ADS)
Wang, Denggui; Zhang, Xingwang; Liu, Heng; Meng, Junhua; Xia, Jing; Yin, Zhigang; Wang, Ye; You, Jingbi; Meng, Xiang-Min
2017-09-01
Group IVB transition metal (Zr and Hf) dichalcogenides (TMDs) have been attracting intensive attention as promising candidates in the modern electronic and/or optoelectronic fields. However, the controllable growth of HfS2 monolayers or few layers still remains a great challenge, thus hindering their further applications so far. Here, for the first time we demonstrate the epitaxial growth of high-quality HfS2 with a controlled number of layers on c-plane sapphire substrates by chemical vapor deposition (CVD). The HfS2 layers exhibit an atomically sharp interface with the sapphire substrate, followed by flat, 2D layers with octahedral coordination. The epitaxial relationship between HfS2 and substrate was determined by x-ray diffraction and transmission electron microscopy measurements to be: HfS2 (0 0 0 1) [10-10]||sapphire (0 0 0 1)[1-100]. Moreover, a high-performance photodetector with a high on/off ratio of more than 103 and an ultrafast response rate of 130 µs for the rise and 155 µs for the decay times were fabricated based on the CVD-grown HfS2 layers on sapphire substrates. This simple and controllable approach opens up a new way to produce highly crystalline HfS2 atomic layers, which are promising materials for nanoelectronics.
NASA Astrophysics Data System (ADS)
Jamaluddin, F. W.; Khalid, M. F. Abdul; Mamat, M. H.; Zoolfakar, A. S.; Zulkefle, M. A.; Rusop, M.; Awang, Z.
2018-05-01
Barium Strontium Titanate (Ba0.5Sr0.5TiO3) is known to have a high dielectric constant and low loss at microwave frequencies. These unique features are useful for many electronic applications. This paper focuses on material characterization of BST thin films deposited on sapphire substrate by RF magnetron sputtering system. The sample was then annealed at 900 °C for two hours. Several methods were used to characterize the structural properties of the material such as X-ray diffraction (XRD) and atomic force microscopy (AFM). Field emission scanning electron microscopy (FESEM) was used to analyze the surface morphology of the thin film. From the results obtained, it can be shown that the annealed sample had a rougher surface and better crystallinity as compared to as-deposited sample.
Resistance of full veneer metal crowns with different forms of axial grooves
NASA Astrophysics Data System (ADS)
Hidayat, A. S.; Masulili, C.; Indrasari, M.
2017-08-01
Dental crowns or bridges can occasionally come loose or separate from the tooth during chewing, particularly when they are situated on small, short, and conical teeth. The main cause of this separation is a lack of retention and resistance to the tooth. There are several methods available to increase the retention and resistance of the crown during both inlay and onlay preparation, including parallelism, groove preparation, crown build-up, and surface roughness. The aim of this study was to determine the differences in resistance of full veneer metal crowns with various forms of groove preparation. The study involved the compressive strength testing of a total of 24 specimens, namely six specimens without groove preparation, six specimens with box-shaped grooves, six specimens with V-shaped grooves, and six specimens with half round grooves. The mean values of the metal crowns that separated from the teeth during testing were 27.97 ± 1.08 kgF for the crowns with box-shaped grooves, 6.15 ± 0.22 kgF for those with V-shaped grooves, 1.77 ± 0.12 kgF for those with half round grooves, and 0.95 ± 0.13 kgF for those without grooves. This study found that the resistance is best in crowns with box-shaped grooves, followed by those with V-shaped grooves, half round grooves, and those without groove. When clinicians are working on short and conical molar teeth, it is therefore recommended that box-shaped grooves are used to increase the resistance of the crown.
High density, optically corrected, micro-channel cooled, v-groove monolithic laser diode array
Freitas, B.L.
1998-10-27
An optically corrected, micro-channel cooled, high density laser diode array achieves stacking pitches to 33 bars/cm by mounting laser diodes into V-shaped grooves. This design will deliver > 4kW/cm{sup 2} of directional pulsed laser power. This optically corrected, micro-channel cooled, high density laser is usable in all solid state laser systems which require efficient, directional, narrow bandwidth, high optical power density pump sources. 13 figs.
NASA Astrophysics Data System (ADS)
Bun-Athuek, Natthaphon; Yoshimoto, Yutaka; Sakai, Koya; Khajornrungruang, Panart; Suzuki, Keisuke
2017-07-01
The surface and diameter size variations of colloidal silica particles during the chemical mechanical polishing (CMP) of sapphire substrates were investigated using different particle diameters of 20 and 55 nm. Dynamic light scattering (DLS) results show that the silica particles became larger after CMP under both conditions. The increase in particle size in the slurry was proportional to the material removal amount (MRA) as a function of the removed volume of sapphire substrates by CMP and affected the material removal rate (MRR). Transmission electron microscopy (TEM) images revealed an increase in the size of the fine particles and a change in their surface shape in the slurry. The colloidal silica was coated with the material removed from the substrate during CMP. In this case, the increase in the size of 55 nm diameter particles is larger than that of 20 nm diameter particles. X-ray fluorescence spectrometry (XRF) results indicate that the aluminum element from polished sapphire substrates adhered to the surfaces of silica particles. Therefore, MRR decreases with increasing of polishing time owing to the degradation of particles in the slurry.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Kizir, Seda; Haider, Ali; Biyikli, Necmi, E-mail: biyikli@unam.bilkent.edu.tr
2016-07-15
Gallium nitride (GaN) thin films were grown on Si (100), Si (111), and c-plane sapphire substrates at 200 °C via hollow-cathode plasma-assisted atomic layer deposition (HCPA-ALD) using GaEt{sub 3} and N{sub 2}/H{sub 2} plasma as group-III and V precursors, respectively. The main aim of the study was to investigate the impact of substrate on the material properties of low-temperature ALD-grown GaN layers. Structural, chemical, and optical characterizations were carried out in order to evaluate and compare film quality of GaN on different substrates. X-ray reflectivity measurements showed film density values of 5.70, 5.74, and 5.54 g/cm{sup 3} for GaN grown on Simore » (100), Si (111), and sapphire, respectively. Grazing incidence x-ray diffraction measurements exhibited hexagonal wurtzite structure in all HCPA-ALD grown GaN samples. However, dominant diffraction peak for GaN films grown on Si and sapphire substrates were detected differently as (002) and (103), respectively. X-ray diffraction gonio scans measured from GaN grown on c-plane sapphire primarily showed (002) orientation. All samples exhibited similar refractive index values (∼2.17 at 632 nm) with 2–3 at. % of oxygen impurity existing within the bulk of the films. The grain size was calculated as ∼9–10 nm for GaN grown on Si (100) and Si (111) samples while it was ∼5 nm for GaN/sapphire sample. Root-mean-square surface roughness values found as 0.68, 0.76, and 1.83 nm for GaN deposited on Si (100), Si (111), and sapphire, respectively. Another significant difference observed between the samples was the film growth per cycle: GaN/sapphire sample showed a considerable higher thickness value when compared with GaN/Si samples, which might be attributed to a possibly more-efficient nitridation and faster nucleation of sapphire surface.« less
Growth and characterizations of various GaN nanostructures on C-plane sapphire using laser MBE
NASA Astrophysics Data System (ADS)
Ch., Ramesh; Tyagi, P.; Maurya, K. K.; Kumar, M. Senthil; Kushvaha, S. S.
2017-05-01
We have grown various GaN nanostructures such as three-dimensional islands, nanowalls and nanocolumns on c-plane sapphire substrates using laser assisted molecular beam epitaxy (LMBE) system. The shape of the GaN nanostructures was controlled by using different nucleation surfaces such as bare and nitridated sapphire with GaN or AlN buffer layers. The structural and surface morphological properties of grown GaN nanostructures were characterized by ex-situ high resolution x-ray diffraction, Raman spectroscopy and field emission scanning electron microscopy. The symmetric x-ray rocking curve along GaN (0002) plane shows that the GaN grown on pre-nitridated sapphire with GaN or AlN buffer layer possesses good crystalline quality compared to sapphire without nitridation. The Raman spectroscopy measurements revealed the wurtzite phase for all the GaN nanostructures grown on c-sapphire.
An investigation of GaN thin films on AlN on sapphire substrate by sol-gel spin coating method
NASA Astrophysics Data System (ADS)
Amin, Nur Fahana Mohd; Ng, Sha Shiong
2017-12-01
In this research, the gallium nitride (GaN) thin films were deposited on aluminium nitride on sapphire (AlN/Al2O3) substrate by sol-gel spin coating method. Simple ethanol-based precursor with the addition of diethanolamine solution was used. The structural and morphology properties of synthesized GaN thin films were characterized by using X-ray Diffraction, Field-Emission Scanning Electron Microscopy and Atomic Force Microscopy. While the elemental compositions and the lattice vibrational properties of the films were investigated by means of the Energy Dispersive X-ray spectroscopy and Raman spectroscopy. All the results revealed that the wurtzite structure GaN thin films with GaN(002) preferred orientation and smooth surface morphology were successfully grown on AlN/Al2O3 substrate by using inexpensive and simplified sol-gel spin coating technique. The sol-gel spin coated GaN thin film with lowest oxygen content was also achieved.FESEM images show that GaN thin films with uniform and packed grains were formed. Based on the obtained results, it can be concluded that wurtzite structure GaN thin films were successfully deposited on AlN/Al2O3 substrate.
Pseudorotational epitaxy of self-assembled octadecyltrichlorosilane monolayers on sapphire (0001)
Steinrück, H. -G.; Magerl, A.; Deutsch, M.; ...
2014-10-06
The structure of octadecyltrichlorosilane self-assembled monolayers (SAMs) on sapphire (0001) was studied by Å-resolution surface-specific x-ray scattering methods. The monolayer was found to consist of three sublayers where the outermost layer corresponds to vertically oriented, closely packed alkyl tails. Laterally, the monolayer is hexagonally packed and exhibits pseudorotational epitaxy to the sapphire, manifested by a broad scattering peak at zero relative azimuthal rotation, with long powderlike tails. The lattice mismatch of ~1% – 3% to the sapphire’s and the different length scale introduced by the lateral Si-O-Si bonding prohibit positional epitaxy. However, the substrate induces an intriguing increase in themore » crystalline coherence length of the SAM’s powderlike crystallites when rotationally aligned with the sapphire’s lattice. As a result, the increase correlates well with the rotational dependence of the separation of corresponding substrate-monolayer lattice sites.« less
Heteroepitaxial Writing of Silicon-on-Sapphire Nanowires.
Xu, Mingkun; Xue, Zhaoguo; Wang, Jimmy; Zhao, Yaolong; Duan, Yao; Zhu, Guangyao; Yu, Linwei; Xu, Jun; Wang, Junzhuan; Shi, Yi; Chen, Kunji; Roca I Cabarrocas, Pere
2016-12-14
The heteroepitaxial growth of crystal silicon thin films on sapphire, usually referred to as SoS, has been a key technology for high-speed mixed-signal integrated circuits and processors. Here, we report a novel nanoscale SoS heteroepitaxial growth that resembles the in-plane writing of self-aligned silicon nanowires (SiNWs) on R-plane sapphire. During a low-temperature growth at <350 °C, compared to that required for conventional SoS fabrication at >900 °C, the bottom heterointerface cultivates crystalline Si pyramid seeds within the catalyst droplet, while the vertical SiNW/catalyst interface subsequently threads the seeds into continuous nanowires, producing self-oriented in-plane SiNWs that follow a set of crystallographic directions of the sapphire substrate. Despite the low-temperature fabrication process, the field effect transistors built on the SoS-SiNWs demonstrate a high on/off ratio of >5 × 10 4 and a peak hole mobility of >50 cm 2 /V·s. These results indicate the novel potential of deploying in-plane SoS nanowire channels in places that require high-performance nanoelectronics and optoelectronics with a drastically reduced thermal budget and a simplified manufacturing procedure.
Resistance to minor groove binders.
Colmegna, Benedetta; Uboldi, Sarah; Erba, Eugenio; D'Incalci, Maurizio
2014-03-01
In this paper multiple resistance mechanisms to minor groove binders (MGBs) are overviewed. MGBs with antitumor properties are natural products or their derivatives and, as expected, they are all substrates of P-glycoprotein (P-gp). However, a moderate expression of P-gp does not appear to reduce the sensitivity to trabectedin, the only MGB so far approved for clinical use. Resistance to this drug is often related to transcriptional mechanisms and to DNA repair pathways, particularly defects in transcription-coupled nucleotide excision repair (TC-NER). Therefore tumors resistant to trabectedin may become hypersensitive to UV rays and other DNA damaging agents acting in the major groove, such as Platinum (Pt) complexes. If this is confirmed in clinic, that will provide the rationale to combine trabectedin sequentially with Pt derivates.
Polymer Scaffolds with Preferential Parallel Grooves Enhance Nerve Regeneration
Mobasseri, Atefeh; Faroni, Alessandro; Minogue, Ben M.; Downes, Sandra; Reid, Adam J.
2015-01-01
We have modified the surface topography of poly ɛ-caprolactone (PCL) and polylactic acid (PLA) blended films to improve cell proliferation and to guide the regeneration of peripheral nerves. Films with differing shaped grooves were made using patterned silicon templates, sloped walls (SL), V-shaped (V), and square-shaped (SQ), and compared with nongrooved surfaces with micropits. The solvent cast films were tested in vitro using adult adipose-derived stem cells differentiated to Schwann cell-like cells. Cell attachment, proliferation, and cell orientation were all improved on the grooved surfaces, with SL grooves giving the best results. We present in vivo data on Sprague-Dawley rat sciatic nerve injury with a 10-mm gap, evaluating nerve regeneration at 3 weeks across a polymer nerve conduit modified with intraluminal grooves (SL, V, and SQ) and differing wall thicknesses (70, 100, 120, and 210 μm). The SL-grooved nerve conduit showed a significant improvement over the other topographical-shaped grooves, while increasing the conduit wall thickness saw no positive effect on the biological response of the regenerating nerve. Furthermore, the preferred SL-grooved conduit (C) with 70 μm wall thickness was compared with the current clinical gold standard of autologous nerve graft (Ag) in the rat 10-mm sciatic nerve gap model. At 3 weeks postsurgery, all nerve gaps across both groups were bridged with regenerated nerve fibers. At 16 weeks, features of regenerated axons were comparable between the autograft (Ag) and conduit (C) groups. End organ assessments of muscle weight, electromyography, and skin reinnervation were also similar between the groups. The comparable experimental outcome between conduit and autograft, suggests that the PCL/PLA conduit with inner lumen microstructured grooves could be used as a potential alternative treatment for peripheral nerve repair. PMID:25435096
NASA Astrophysics Data System (ADS)
Kao, Chien-Chih; Su, Yan-Kuin; Lin, Chuing-Liang; Chen, Jian-Jhong
2010-07-01
The nanopatterned sapphire substrates (NPSSs) with aspect ratio that varied from 2.00 to 2.50 were fabricated by nanoimprint lithography. We could improve the epitaxial film quality and enhance the light extraction efficiency by NPSS technique. In this work, the aspect ratio effects on the performances of GaN-based light-emitting diodes (LEDs) with NPSS were investigated. The light output enhancement of GaN-based LEDs with NPSS was increased from 11% to 27% as the aspect ratio of the NPSS increases from 2.00 to 2.50. Owing to the same improvement of crystalline quality by using various aspect ratios of NPSS, these results indicated that the aspect ratio of the NPSS is strongly related to the light extraction efficiency.
Ghalem, Areski; Ponchel, Freddy; Remiens, Denis; Legier, Jean-Francois; Lasri, Tuami
2013-05-01
A complete microwave characterization up to 67 GHz using specific coplanar waveguides was performed to determine the dielectric properties (permittivity, losses, and tunability) of sapphire/TiOx/Ba0.3Sr0.7TiO3 (BST) (111)-oriented thin films. To that end, BaxSr1-xTiO3 thin films were deposited by RF magnetron sputtering on sapphire (0001) substrate. To control the preferred (111) orientation, a TiOx buffer layer was deposited on sapphire. According to the detailed knowledge of the material properties, it has been possible to conceive, fabricate, and test interdigitated capacitors, the basic element for future microwave tunable applications. Retention of capacitive behavior up to 67 GHz and a tunability of 32% at 67 GHz at an applied voltage of 30 V (150 kV/cm) were observed. The Q-factor remains greater than 30 over the entire frequency band. The possibility of a complete characterization of the material for the realization of high-performance interdigitated capacitors opens the door to microwave device fabrication.
Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering
NASA Astrophysics Data System (ADS)
Voronov, D. L.; Gawlitza, P.; Cambie, R.; Dhuey, S.; Gullikson, E. M.; Warwick, T.; Braun, S.; Yashchuk, V. V.; Padmore, H. A.
2012-05-01
Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr+ ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.
Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering
DOE Office of Scientific and Technical Information (OSTI.GOV)
Voronov, D. L.; Cambie, R.; Dhuey, S.
2012-05-01
Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. To minimize the shadowing effects, we used an ion-beam sputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in order to minimizemore » degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr{sup +} ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.« less
Conformal growth of Mo/Si multilayers on grating substrates using collimated ion beam sputtering
DOE Office of Scientific and Technical Information (OSTI.GOV)
Voronov, D. L.; Gawlitza, Peter; Cambie, Rossana
2012-05-07
Deposition of multilayers on saw-tooth substrates is a key step in the fabrication of multilayer blazed gratings (MBG) for extreme ultraviolet and soft x-rays. Growth of the multilayers can be perturbed by shadowing effects caused by the highly corrugated surface of the substrates, which results in distortion of the multilayer stack structure and degradation of performance of MBGs. In this study, to minimize the shadowing effects, we used an ion-beamsputtering machine with a highly collimated atomic flux to deposit Mo/Si multilayers on saw-tooth substrates. The sputtering conditions were optimized by finding a balance between smoothening and roughening processes in ordermore » to minimize degradation of the groove profile in the course of deposition and at the same time to keep the interfaces of a multilayer stack smooth enough for high efficiency. An optimal value of energy of 200 eV for sputtering Kr + ions was found by deposition of test multilayers on flat substrates at a range of ion energies. Two saw-tooth substrates were deposited at energies of 200 eV and 700 eV for the sputtering ions. It was found that reduction of the ion energy improved the blazing performance of the MBG and resulted in a 40% gain in the diffraction efficiency due to better replication of the groove profile by the multilayer. As a result of the optimization performed, an absolute diffraction efficiency of 28.8% was achieved for the 2nd blaze order of the MBG with a groove density of 7350 lines/mm at a wavelength of 13.5 nm. Lastly, details of the growth behavior of the multilayers on flat and saw-tooth substrates are discussed in terms of the linear continuous model of film growth.« less
Rohrer, Karin M; Haug, Markus; Schwörer, Daniela; Kalbacher, Hubert; Holzer, Ursula
2014-01-01
Heat-shock protein 70 (Hsp70)–peptide complexes are involved in MHC class I-and II-restricted antigen presentation, enabling enhanced activation of T cells. As shown previously, mammalian cytosolic Hsp70 (Hsc70) molecules interact specifically with HLA-DR molecules. This interaction might be of significance as Hsp70 molecules could transfer bound antigenic peptides in a ternary complex into the binding groove of HLA-DR molecules. The present study provides new insights into the distinct interaction of Hsp70 with HLA-DR molecules. Using a quantitative binding assay, it could be demonstrated that a point mutation of amino acids alanine 406 and valine 438 in the substrate binding pocket led to reduced peptide binding compared with the wild-type Hsp70 whereas HLA-DR binding remains unaffected. The removal of the C-terminal lid neither altered the substrate binding capacity nor the Hsp70 binding characteristics to HLA-DR. A truncated variant lacking the nucleotide binding domain showed no binding interactions with HLA-DR. Furthermore, the truncated ATPase subunit of constitutively expressed Hsc70 revealed similar binding affinities to HLA-DR compared with the complete Hsc70. Hence, it can be assumed that the Hsp70–HLA-DR interaction takes place outside the peptide binding groove and is attributed to the ATPase domain of HSP70 molecules. The Hsp70-chaperoned peptides might thereby be directly transferred into the binding groove of HLA-DR, so enabling enhanced presentation of the peptide on antigen-presenting cells and leading to an improved proliferation of responding T cells as shown previously. PMID:24428437
NASA Astrophysics Data System (ADS)
Jmerik, V. N.; Kuznetsova, N. V.; Nechaev, D. V.; Shubina, T. V.; Kirilenko, D. A.; Troshkov, S. I.; Davydov, V. Yu.; Smirnov, A. N.; Ivanov, S. V.
2017-11-01
The site-controlled selective area growth of N-polar GaN nanorods (NR) was developed by plasma-assisted MBE (PA MBE) on micro-cone-patterned sapphire substrates (μ-CPSS) by using a two-stage growth process. A GaN nucleation layer grown by migration enhanced epitaxy provides the best selectivity for nucleation of NRs on the apexes of 3.5-μm-diameter cones, whereas the subsequent growth of 1-μm-high NRs with a constant diameter of about 100 nm proceeds by standard high-temperature PA MBE at nitrogen-rich conditions. These results are explained by anisotropy of the surface energy for GaN of different polarity and crystal orientation. The InGaN single quantum wells inserted in the GaN NRs grown on the μ-CPSS demonstrate photoluminescence at 510 nm with a spatially periodic variation of its intensity with a period of ∼6 μm equal to that of the substrate patterning profile.
High performance sapphire windows
NASA Technical Reports Server (NTRS)
Bates, Stephen C.; Liou, Larry
1993-01-01
High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.
High performance sapphire windows
NASA Astrophysics Data System (ADS)
Bates, Stephen C.; Liou, Larry
1993-02-01
High-quality, wide-aperture optical access is usually required for the advanced laser diagnostics that can now make a wide variety of non-intrusive measurements of combustion processes. Specially processed and mounted sapphire windows are proposed to provide this optical access to extreme environment. Through surface treatments and proper thermal stress design, single crystal sapphire can be a mechanically equivalent replacement for high strength steel. A prototype sapphire window and mounting system have been developed in a successful NASA SBIR Phase 1 project. A large and reliable increase in sapphire design strength (as much as 10x) has been achieved, and the initial specifications necessary for these gains have been defined. Failure testing of small windows has conclusively demonstrated the increased sapphire strength, indicating that a nearly flawless surface polish is the primary cause of strengthening, while an unusual mounting arrangement also significantly contributes to a larger effective strength. Phase 2 work will complete specification and demonstration of these windows, and will fabricate a set for use at NASA. The enhanced capabilities of these high performance sapphire windows will lead to many diagnostic capabilities not previously possible, as well as new applications for sapphire.
NASA Astrophysics Data System (ADS)
Lee, Fang-Wei; Ke, Wen-Cheng; Cheng, Chun-Hong; Liao, Bo-Wei; Chen, Wei-Kuo
2016-07-01
This study presents GaN thin films grown on nanoscale-patterned sapphire substrates (NPSSs) with different aspect ratios (ARs) using a homemade metal-organic chemical vapor deposition system. The anodic aluminum oxide (AAO) technique is used to prepare the dry etching mask. The cross-sectional view of the scanning electron microscope image shows that voids exist between the interface of the GaN thin film and the high-AR (i.e. ∼2) NPSS. In contrast, patterns on the low-AR (∼0.7) NPSS are filled full of GaN. The formation of voids on the high-AR NPSS is believed to be due to the enhancement of the lateral growth in the initial growth stage, and the quick-merging GaN thin film blocks the precursors from continuing to supply the bottom of the pattern. The atomic force microscopy images of GaN on bare sapphire show a layer-by-layer surface morphology, which becomes a step-flow surface morphology for GaN on a high-AR NPSS. The edge-type threading dislocation density can be reduced from 7.1 × 108 cm-2 for GaN on bare sapphire to 4.9 × 108 cm-2 for GaN on a high-AR NPSS. In addition, the carrier mobility increases from 85 cm2/Vs for GaN on bare sapphire to 199 cm2/Vs for GaN on a high-AR NPSS. However, the increased screw-type threading dislocation density for GaN on a low-AR NPSS is due to the competition of lateral growth on the flat-top patterns and vertical growth on the bottom of the patterns that causes the material quality of the GaN thin film to degenerate. Thus, the experimental results indicate that the AR of the particular patterning of a NPSS plays a crucial role in achieving GaN thin film with a high crystalline quality.
Chen, Hao; Zhang, Qi; Chou, Stephen Y
2015-02-27
Sapphire nanopatterning is the key solution to GaN light emitting diode (LED) light extraction. One challenge is to etch deep nanostructures with a vertical sidewall in sapphire. Here, we report a study of the effects of two masking materials (SiO2 and Cr) and different etching recipes (the reaction gas ratio, the reaction pressure and the inductive power) in a chlorine-based (BCl3 and Cl2) inductively coupled plasma (ICP) etching of deep nanopillars in sapphire, and the etching process optimization. The masking materials were patterned by nanoimprinting. We have achieved high aspect ratio sapphire nanopillar arrays with a much steeper sidewall than the previous etching methods. We discover that the SiO2 mask has much slower erosion rate than the Cr mask under the same etching condition, leading to the deep cylinder-shaped nanopillars (122 nm diameter, 200 nm pitch, 170 nm high, flat top, and a vertical sidewall of 80° angle), rather than the pyramid-shaped shallow pillars (200 nm based diameter, 52 nm height, and 42° sidewall) resulted by using Cr mask. The processes developed are scalable to large volume LED manufacturing.
Orange a-plane InGaN/GaN light-emitting diodes grown on r-plane sapphire substrates.
Seo, Yong Gon; Baik, Kwang Hyeon; Song, Hooyoung; Son, Ji-Su; Oh, Kyunghwan; Hwang, Sung-Min
2011-07-04
We report on orange a-plane light-emitting diodes (LEDs) with InGaN single quantum well (SQW) grown on r-plane sapphire substrates by metal organic chemical vapor deposition (MOCVD). The peak wavelength and the full-width at half maximum (FWHM) at a drive current of 20mA were 612.2 nm and 72 nm, respectively. The device demonstrated a blue shift in emission wavelength from 614.6 nm at 10 mA to 607.5 nm at 100 mA, representing a net shift of 7.1 nm over a 90 mA range, which is the longest wavelength compared with reported values in nonpolar LEDs. The polarization ratio values obtained from the orange LED varied between 0.36 and 0.44 from 10 to 100mA and a weak dependence of the polarization ratio on the injection current was observed.
NASA Astrophysics Data System (ADS)
Xu, Shicai; Jiang, Shouzhen; Zhang, Chao; Yue, Weiwei; Zou, Yan; Wang, Guiying; Liu, Huilan; Zhang, Xiumei; Li, Mingzhen; Zhu, Zhanshou; Wang, Jihua
2018-01-01
Graphene has attracted much attention in biosensing applications for its unique properties. Because of one-atom layer structure, every atom of graphene is exposed to the environment, making the electronic properties of graphene are very sensitive to charged analytes. Therefore, graphene is an ideal material for transistors in high-performance sensors. Chemical vapor deposition (CVD) method has been demonstrated the most successful method for fabricating large area graphene. However, the conventional CVD methods can only grow graphene on metallic substrate and the graphene has to be transferred to the insulating substrate for further device fabrication. The transfer process creates wrinkles, cracks, or tears on the graphene, which severely degrade electrical properties of graphene. These factors severely degrade the sensing performance of graphene. Here, we directly fabricated graphene on sapphire substrate by high temperature CVD without the use of metal catalysts. The sapphire-based graphene was patterned and make into a DNA biosensor in the configuration of field-effect transistor. The sensors show high performance and achieve the DNA detection sensitivity as low as 100 fM (10-13 M), which is at least 10 times lower than prior transferred CVD G-FET DNA sensors. The use of the sapphire-based G-FETs suggests a promising future for biosensing applications.
NASA Technical Reports Server (NTRS)
1985-01-01
Safety grooving, the cutting of grooves in concrete to increase traction and prevent injury, was first developed to reduce aircraft accidents on wet runways. Represented by the International Grooving and Grinding Association (IG&GA), the industry expanded into highway and pedestrian applications. The technique originated at Langley, which assisted in testing the grooving at airports and on highways. Skidding was reduced, stopping distance decreased, and a vehicle's cornering ability on curves was increased. The process has been extended to animal holding pens, steps, parking lots and other potentially slippery surfaces.
Optical absorption edge of ZnO thin films: The effect of substrate
NASA Astrophysics Data System (ADS)
Srikant, V.; Clarke, D. R.
1997-05-01
The optical absorption edge and the near-absorption edge characteristics of undoped ZnO films grown by laser ablation on various substrates have been investigated. The band edge of films on C [(0001)] and R-plane [(1102)] sapphire, 3.29 and 3.32 eV, respectively, are found to be very close to the single crystal value of ZnO (3.3 eV) with the differences being accounted for in terms of the thermal mismatch strain using the known deformation potentials of ZnO. In contrast, films grown on fused silica consistently exhibit a band edge ˜0.1 eV lower than that predicted using the known deformation potential and the thermal mismatch strains. This behavior is attributed to the small grain size (50 nm) realized in these films and the effect of electrostatic potentials that exist at the grain boundaries. Additionally, the spread in the tail (E0) of the band edge for the different films is found to be very sensitive to the defect structure in the films. For films grown on sapphire substrates, values of E0 as low as 30 meV can be achieved on annealing in air, whereas films on fused silica always show a value >100 meV. We attribute this difference to the substantially higher density of high-angle grain boundaries in the films on fused silica.
NASA Technical Reports Server (NTRS)
1986-01-01
This image of Miranda, obtained by Voyager 2 on approach, shows an unusual 'chevron' figure and regions of distinctly differing terrain on the Uranian moon. Voyager was 42,000 kilometers (26,000 miles) away when its narrow-angle camera acquired this clear-filter view. Grooved areas baring light and dark bands, distinct from other areas of mottled terrain, are visible at this resolution of about 600 meters (2,000 feet). The bright V-shaped feature in the grooved areas is the 'chevron' observed in earlier, lower-resolution images. Cutting across the bands are sinuous scarps, probably faults. Superimposed on both types of terrain are many bowl-shaped impact craters less than 5 km (3 mi) wide. The entire picture spans an area about 220 km (140 mi) across. The Voyager project is managed for NASA by the Jet Propulsion Laboratory.
NASA Astrophysics Data System (ADS)
Lai, Billy; Li, Qiang; Lau, Kei May
2018-02-01
InAs/GaSb nanoridge heterostructures were grown on V-grooved (0 0 1) Si by metal organic chemical vapor deposition. Combining the aspect ratio trapping process and a low temperature GaAs buffer, we demonstrated high quality GaSb nanoridge templates for InAs/GaSb heterostructure growth. Two different interfaces, a transitional GaAsSb and an InSb-like interface, were investigated when growing these heterostructures. A 500 °C growth temperature in conjunction with a GaAsSb interface was determined to produce the optimal interface, properly compensating for the tensile strain accumulated when growing InAs on GaSb. Without the need for a complicated switching sequence, this GaAsSb-like interface utilized at the optimized temperature is the initial step towards InAs/GaSb type II superlattice and other device structures integrated onto Si.
Behr, Sebastian; Jungblut, Laura; Swain, Michael V; Schneider, Gerold A
2016-10-12
The common tensile lap-shear test for adhesive joints is inappropriate for brittle substrates such as glasses or ceramics where stress intensifications due to clamping and additional bending moments invalidate results. Nevertheless, bonding of glasses and ceramics is still important in display applications for electronics, in safety glass and ballistic armor, for dental braces and restoratives, or in recently developed bioinspired composites. To mechanically characterize adhesive bondings in these fields nonetheless, a novel approach based on the so-called Schwickerath test for dental sintered joints is used. This new method not only matches data from conventional analysis but also uniquely combines the accurate determination of interfacial shear strength and toughness in one simple test. The approach is verified for sapphire-epoxy joints that are of interest for bioinspired composites. For these, the procedure not only provides quantitative interfacial properties for the first time, it also exemplarily suggests annealing of sapphire at 1000 °C for 10 h for mechanically and economically effective improvements of the interfacial bond strength and toughness. With increases of strength and toughness from approximately 8 to 29 MPa and from 2.6 to 35 J/m 2 , respectively, this thermal modification drastically enhances the properties of unmodified sapphire-epoxy interfaces. At the same time, it is much more convenient than wet-chemical approaches such as silanization. Hence, besides the introduction of a new testing procedure for adhesive joints of brittle or expensive substrates, a new and facile annealing process for improvements of the adhesive properties of sapphire is suggested and quantitative data for the mechanical properties of sapphire-epoxy interfaces that are common in synthetic nacre-inspired composites are provided for the first time.
NASA Astrophysics Data System (ADS)
Li, Xiao-Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.
2015-03-01
We studied temperature dependence of crystalline quality of AlN layers at 1050-1250 °C with a fine increment step of around 18 °C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068 °C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086 °C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 °C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 °C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 °C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086 °C which is accessible by most of the III-nitride MOCVD systems.
NASA Astrophysics Data System (ADS)
Lin, Jyun-Hao; Huang, Shyh-Jer; Su, Yan-Kuin; Huang, Kai-Wen
2015-11-01
In contrast to convex nano-pattern sapphire substrates (NPSS), which are frequently used to fabricate high-quality nitride-based light-emitting diodes (LEDs), concave NPSS have been paid relatively less attention. In this study, a concave NPSS was fabricated, and its nitride epitaxial growth process was evaluated in a step by step manner. A SiO2 layer was used to avoid nucleation over the sidewall and bottom of the nano-patterns to reduce dislocation reformation. Traditional LED structures were grown on the NPSS layer to determine its influence on device performance. X-ray diffraction, etched pit density, inverse leakage current, and internal quantum efficiency (IQE) results showed that dislocations and non-radiative recombination centers are reduced by the NPSS constructed with a SiO2 blocking layer. An IQE twice that on a planar substrate was also achieved; such a high IQE significantly enhanced the external quantum efficiency of the resultant device. Taken together, the results demonstrate that the SiO2 blocking layer proposed in this work can enhance the performance of LEDs.
NASA Astrophysics Data System (ADS)
Gillinger, M.; Shaposhnikov, K.; Knobloch, T.; Stöger-Pollach, M.; Artner, W.; Hradil, K.; Schneider, M.; Kaltenbacher, M.; Schmid, U.
2018-03-01
Aluminum nitride (AlN) on sapphire has been investigated with two different pretreatments prior to sputter deposition of the AlN layer to improve the orientation and homogeneity of the thin film. An inverse sputter etching of the substrate in argon atmosphere results in an improvement of the uniformity of the alignment of the AlN grains and hence, in enhanced electro-mechanical AlN film properties. This effect is demonstrated in the raw measurements of SAW test devices. Additionally, the impulse response of several devices shows that a poor AlN thin film layer quality leads to a higher signal damping during the transduction of energy in the inter-digital transducers. As a result, the triple-transit signal cannot be detected at the receiver.
Lattice distortions in GaN on sapphire using the CBED-HOLZ technique.
Sridhara Rao, D V; McLaughlin, K; Kappers, M J; Humphreys, C J
2009-09-01
The convergent beam electron diffraction (CBED) methodology was developed to investigate the lattice distortions in wurtzite gallium nitride (GaN) from a single zone-axis pattern. The methodology enabled quantitative measurements of lattice distortions (alpha, beta, gamma and c) in transmission electron microscope (TEM) specimens of a GaN film grown on (0,0,0,1) sapphire by metal-organic vapour-phase epitaxy. The CBED patterns were obtained at different distances from the GaN/sapphire interface. The results show that GaN is triclinic above the interface with an increased lattice parameter c. At 0.85 microm from the interface, alpha=90 degrees , beta=8905 degrees and gamma=11966 degrees . The GaN lattice relaxes steadily back to hexagonal further away from the sapphire substrate. The GaN distortions are mainly confined to the initial stages of growth involving the growth and the coalescence of 3D GaN islands.
Formation of graphitic carbon nitride and boron carbon nitride film on sapphire substrate
NASA Astrophysics Data System (ADS)
Kosaka, Maito; Urakami, Noriyuki; Hashimoto, Yoshio
2018-02-01
As a novel production method of boron carbon nitride (BCN) films, in this paper, we present the incorporation of B into graphitic carbon nitride (g-C3N4). First, we investigated the formation of g-C3N4 films via chemical vapor deposition (CVD) using melamine powder as the precursor. The formation of g-C3N4 films on a c-plane sapphire substrate was confirmed by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD), and Raman spectroscopy measurements. The deposition temperature of g-C3N4 films was found to be suitable between 550 and 600 °C since the degradation and desorption of hexagonal C-N bonds should be suppressed. As for BCN films, we prepared BCN films via two-zone extended CVD using ammonia borane as the B precursor. Several XPS signals from B, C, and N core levels were detected from B-incorporated g-C3N4 films. While the N composition was almost constant, the marked tendencies for increasing B composition and decreasing C composition were achieved with the increase in the B incorporation, indicating the incorporation of B atoms by the substitution for C atoms. Optical absorptions were shifted to the high-energy side by B incorporation, which indicates the successful formation of BCN films using melamine and ammonia borane powders as precursors.
NASA Astrophysics Data System (ADS)
Huang, Hung-Wen; Huang, Jhi-Kai; Kuo, Shou-Yi; Lee, Kang-Yuan; Kuo, Hao-Chung
2010-06-01
In this paper, GaN-based LEDs with a nanoscale patterned sapphire substrate (NPSS) and a SiO2 photonic quasicrystal (PQC) structure on an n-GaN layer using nanoimprint lithography are fabricated and investigated. The light output power of LED with a NPSS and a SiO2 PQC structure on an n-GaN layer was 48% greater than that of conventional LED. Strong enhancement in output power is attributed to better epitaxial quality and higher reflectance resulted from NPSS and PQC structures. Transmission electron microscopy images reveal that threading dislocations are blocked or bended in the vicinities of NPSS layer. These results provide promising potential to increase output power for commercial light emitting devices.
NASA Astrophysics Data System (ADS)
Bayati, Mohammad Reza
The main focus of this study was placed on structure-property correlation in TiO2 and VO2 based epitaxial heterostructures where the photochemical and electrical properties were tuned through microstructural engineering. In the framework of domain matching epitaxy, epitaxial growth of TiO2 and VO2 heterostructures on different substrates were explained. The theta-2theta and ϕ scan X-ray diffraction measurements and detailed high resolution electron microscopy studies corroborated our understanding of the epitaxial growth and the crystallographic arrangement across the interfaces. The influence of the laser and substrate variables on structural characteristics of the films was investigated using X-ray photoelectron spectroscopy, room temperature photoluminescence spectroscopy, and UV-Vis spectrophotometry. In addition, morphological studies were performed by atomic force microscopy. Photochemical properties of the heterostructures were assessed through measuring surface wettability characteristics and photocatalytic reaction rate constant of degradation of 4-chlorophenol under ultraviolet and visible irradiations. We also studied electrical properties employing 4-probe measurement technique. The effect of post treatment processes, such as vacuum annealing and laser treatment, on structure and properties was investigated as well. The role of point defects and deviation from the stoichiometry on photochemical and electrical properties was addressed. In this research, TiO2 epilayers with controlled phase structure, defect content, and crystallographic alignments were grown on sapphire and silicon substrates. Integration with silicon was achieved using cubic and tetragonal yttria-stabilized zirconia buffer layers. I was able to tune the phase structure of the TiO2 based heterostructures from pure rutile to pure anatase and establish an epitaxial relationship across the interfaces in each case. These heterostructures were used for two different purposes. First, their
Efficient solar-pumped Nd:YAG laser by a double-stage light-guide/V-groove cavity
NASA Astrophysics Data System (ADS)
Almeida, Joana; Liang, Dawei
2011-05-01
Since the first reported Nd:YAG solar laser, researchers have been exploiting parabolic mirrors and heliostats for enhancing laser output performance. We are now investigating the production of an efficient solar-pumped laser for the reduction of magnesium from magnesium oxide, which could be an alternative solution to fossil fuel. Therefore both high conversion efficiency and excellent beam quality are imperative. By using a single fused silica light guide of rectangular cross section, highly concentrated solar radiation at the focal spot of a stationary parabolic mirror is efficiently transferred to a water-flooded V-groove pump cavity. It allows for the double-pass absorption of pump light along a 4mm diameter, 30mm length, 1.1at% Nd:YAG rod. Optimum pumping parameters and solar laser output power are found through ZEMAXTM non-sequential ray-tracing and LASCADTM laser cavity analysis. 11.0 W of multimode laser output power with excellent beam profile is numerically calculated, corresponding to 6.1W/m2 collection efficiency. To validate the proposed pumping scheme, an experimental setup of the double-stage light-guide/V-groove cavity was built. 78% of highly concentrated solar radiation was efficiently transmitted by the fused silica light guide. The proposed pumping scheme can be an effective solution for enhancing solar laser performances when compared to other side-pump configurations.
Grooved impactor and inertial trap for sampling inhalable particulate matter
Loo, Billy W.
1984-01-01
An inertial trap and grooved impactor for providing a sharp cutoff for particles over 15 microns from entering an inhalable particulate sampler. The impactor head has a tapered surface and is provided with V-shaped grooves. The tapered surface functions for reducing particle blow-off or reentrainment while the grooves prevent particle bounce. Water droplets and any resuspended material over the 15 micron size are collected by the inertial trap and deposited in a reservoir associated with the impactor.
NASA Astrophysics Data System (ADS)
Zaw, Khin; Sutherland, Lin; Yui, Tzen-Fu; Meffre, Sebastien; Thu, Kyaw
2015-01-01
Rubies and sapphires are of both scientific and commercial interest. These gemstones are corundum colored by transition elements within the alumina crystal lattice: Cr3+ yields red in ruby and Fe2+, Fe3+, and Ti4+ ionic interactions color sapphires. A minor ion, V3+ induces slate to purple colors and color change in some sapphires, but its role in coloring rubies remains enigmatic. Trace element and oxygen isotope composition provide genetic signatures for natural corundum and assist geographic typing. Here, we show that V can dominate chromophore contents in Mogok ruby suites. This raises implications for their color quality, enhancement treatments, geographic origin, exploration and exploitation and their comparison with rubies elsewhere. Precise LA-ICP-MS analysis of ruby and sapphire from Mogok placer and in situ deposits reveal that V can exceed 5,000 ppm, giving V/Cr, V/Fe and V/Ti ratios up to 26, 78, and 97 respectively. Such values significantly exceed those found elsewhere suggesting a localized geological control on V-rich ruby distribution. Our results demonstrate that detailed geochemical studies of ruby suites reveal that V is a potential ruby tracer, encourage comparisons of V/Cr-variation between ruby suites and widen the scope for geographic typing and genesis of ruby. This will allow more precise comparison of Asian and other ruby fields and assist confirmation of Mogok sources for rubies in historical and contemporary gems and jewelry.
Spontaneous formation of multiple land-and-groove structures of silica thin films
NASA Astrophysics Data System (ADS)
Takeda, Yasuhiko; Matsuoka, Yoriko; Motohiro, Tomoyoshi
1999-05-01
We found spontaneous formation of microscopic multiple land-and-groove structures of silica thin films. Silica and nickel were simultaneously deposited onto glass substrates from two opposite oblique directions to form columnar structures of silica among which nickel nanoparticles were embedded. Then nickel was dissolved in hydrochloric acid solution. After the dissolution of the nickel particles the columns of silica became very unstable and coalesced to form the multiple land-and-groove structures. The grooves are oriented to the direction perpendicular to the two deposition directions. The distances between the neighboring grooves are fairly uniform, and can be controlled between several hundred nanometers and several microns by changing the film thickness and the ratio of the nickel deposition rate to the silica deposition rate. The process found here may propose a new class of micro fabrication techniques in contrast to the artificial photolithography.
Low Temperature Rhombohedral Single Crystal SiGe Epitaxy on c-plane Sapphire
NASA Technical Reports Server (NTRS)
Duzik, Adam J.; Choi, Sang H.
2016-01-01
Current best practice in epitaxial growth of rhombohedral SiGe onto (0001) sapphire (Al2O3) substrate surfaces requires extreme conditions to grow a single crystal SiGe film. Previous models described the sapphire surface reconstruction as the overriding factor in rhombohedral epitaxy, requiring a high temperature Al-terminated surface for high quality films. Temperatures in the 850-1100 C range were thought to be necessary to get SiGe to form coherent atomic matching between the (111) SiGe plane and the (0001) sapphire surface. Such fabrication conditions are difficult and uneconomical, hindering widespread application. This work proposes an alternative model that considers the bulk sapphire structure and determines how the SiGe film nucleates and grows. Accounting for thermal expansion effects, calculations using this new model show that both pure Ge and SiGe can form single crystal films in the 450-550 C temperature range. Experimental results confirm these predictions, where x-ray diffraction and atomic force microscopy show the films fabricated at low temperature rival the high temperature films in crystallographic and surface quality. Finally, an explanation is provided for why films of comparable high quality can be produced in either temperature range.
Structural, transport and microwave properties of 123/sapphire films: Thickness effect
DOE Office of Scientific and Technical Information (OSTI.GOV)
Predtechensky, MR.; Smal, A.N.; Varlamov, Y.D.
1994-12-31
The effect of thickness and growth conditions on the structure and microwave properties has been investigated for the 123/sapphire films. It has been shown that in the conditions of epitaxial growth and Al atoms do not diffuse from substrate into the film and the films with thickness up to 100nm exhibit the excellent DC properties. The increase of thickness of GdBaCuO films causes the formation of extended line-mesh defects and the increase of the surface resistance (R{sub S}). The low value of surface resistance R{sub S}(75GHz,77K)=20 mOhm has been obtained for the two layer YBaCuO/CdBaCuO/sapphire films.
Preparation and modification of VO2 thin film on R-sapphire substrate by rapid thermal process
NASA Astrophysics Data System (ADS)
Zhu, Nai-Wei; Hu, Ming; Xia, Xiao-Xu; Wei, Xiao-Ying; Liang, Ji-Ran
2014-04-01
The VO2 thin film with high performance of metal-insulator transition (MIT) is prepared on R-sapphire substrate for the first time by magnetron sputtering with rapid thermal process (RTP). The electrical characteristic and THz transmittance of MIT in VO2 film are studied by four-point probe method and THz time domain spectrum (THz-TDS). X-ray diffraction (XRD), X-ray photoelectron spectroscopy (XPS), atomic force microscopy (AFM), and search engine marketing (SEM) are employed to analyze the crystalline structure, valence state, surface morphology of the film. Results indicate that the properties of VO2 film which is oxidized from the metal vanadium film in oxygen atmosphere are improved with a follow-up RTP modification in nitrogen atmosphere. The crystallization and components of VO2 film are improved and the film becomes compact and uniform. A better phase transition performance is shown that the resistance changes nearly 3 orders of magnitude with a 2-°C hysteresis width and the THz transmittances are reduced by 64% and 60% in thermal and optical excitation respectively.
Liu, Hongfei; Chi, Dongzhi
2015-01-01
Vapor-phase growth of large-area two-dimensional (2D) MoS2 nanosheets via reactions of sulfur with MoO3 precursors vaporized and transferred from powder sources onto a target substrate has been rapidly progressing. Recent studies revealed that the growth yield of high quality singlelayer (SL) MoS2 is essentially controlled by quite a few parameters including the temperature, the pressure, the amount/weight of loaded source precursors, and the cleanup of old precursors. Here, we report a dispersive growth method where a shadow mask is encapsulated on the substrate to ‘indirectly’ supply the source precursors onto the laterally advancing growth front at elevated temperatures. With this method, we have grown large-area (up to millimeters) SL-MoS2 nanosheets with a collective in-plane orientation on c-plane sapphire substrates. Regular ripples (~1 nm in height and ~50 nm in period) have been induced by laser scanning into the SL-MoS2 nanosheets. The MoS2 ripples easily initiate at the grain boundaries and extend along the atomic steps of the substrate. Such laser-induced ripple structures can be fundamental materials for studying their effects, which have been predicted to be significant but hitherto not evidenced, on the electronic, mechanical, and transport properties of SL-MoS2. PMID:26119325
DOE Office of Scientific and Technical Information (OSTI.GOV)
Milakhina, D. S., E-mail: denironman@mail.ru; Malin, T. V.; Mansurov, V. G.
This paper is devoted to the study of the nitridation of unreconstructed and reconstructed (√31 ×√31)R ± 9° (0001) sapphire surfaces in an ammonia flow by reflection high-energy electron diffraction (RHEED). The experimental results show that sapphire nitridation occurs on the unreconstructed (1 × 1) surface, which results in AlN phase formation on the substrate surface. However, if sapphire nitridation is preceded by high-temperature annealing (1150°C) resulting in sapphire surface reconstruction with formation of the (√31 ×√31)R ± 9° surface, the crystalline AlN phase on the sapphire surface is not formed during surface exposure to an ammonia flow.
Strain effect in epitaxial VO2 thin films grown on sapphire substrates using SnO2 buffer layers
NASA Astrophysics Data System (ADS)
Kim, Heungsoo; Bingham, Nicholas S.; Charipar, Nicholas A.; Piqué, Alberto
2017-10-01
Epitaxial VO2/SnO2 thin film heterostructures were deposited on m-cut sapphire substrates via pulsed laser deposition. By adjusting SnO2 (150 nm) growth conditions, we are able to control the interfacial strain between the VO2 film and SnO2 buffer layer such that the semiconductor-to-metal transition temperature (TC) of VO2 films can be tuned without diminishing the magnitude of the transition. It is shown that in-plane tensile strain and out-of-plane compressive strain of the VO2 film leads to a decrease of Tc. Interestingly, VO2 films on SnO2 buffer layers exhibit a structural phase transition from tetragonal-like VO2 to tetragonal-VO2 during the semiconductor-to-metal transition. These results suggest that the strain generated by SnO2 buffer provides an effective way for tuning the TC of VO2 films.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Shakthivel, Dhayalan; Rathkanthiwar, Shashwat; Raghavan, Srinivasan, E-mail: sraghavan@cense.iisc.ernet.in
2015-04-28
Si nanowire growth on sapphire substrates by the vapor-liquid-solid (VLS) method using Au catalyst particles has been studied. Sapphire was chosen as the substrate to ensure that the vapor phase is the only source of Si. Three hitherto unreported observations are described. First, an incubation period of 120–480 s, which is shown to be the incubation period as defined in classical nucleation theory, is reported. This incubation period permits the determination of a desolvation energy of Si from Au-Si alloys of 15 kT. Two, transmission electron microscopy studies of incubation, point to Si loss by reverse reaction as an important partmore » of the mechanism of Si nanowire growth by VLS. Three, calculations using these physico-chemical parameters determined from incubation and measured steady state growth rates of Si nanowires show that wire growth happens from a supersaturated catalyst droplet.« less
Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong
2014-01-01
Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm2 at the reverse bias of −1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface. PMID:25205042
Zhang, Kexiong; Liang, Hongwei; Liu, Yang; Shen, Rensheng; Guo, Wenping; Wang, Dongsheng; Xia, Xiaochuan; Tao, Pengcheng; Yang, Chao; Luo, Yingmin; Du, Guotong
2014-09-10
Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n(+)-GaN polarization-induced backward tunneling junction (PIBTJ) was grown by metal-organic chemical vapor deposition on sapphire substrate. A self-consistent solution of Poisson-Schrödinger equations combined with polarization-induced theory was used to model PIBTJ structure, energy band diagrams and free carrier concentrations distribution. The PIBTJ displays reliable and reproducible backward tunneling with a current density of 3 A/cm(2) at the reverse bias of -1 V. The absence of negative differential resistance behavior of PIBTJ at forward bias can mainly be attributed to the hole compensation centers, including C, H and O impurities, accumulated at the p-GaN/Mg-doped AlGaN heterointerface.
Spontaneous formation of GaN/AlN core-shell nanowires on sapphire by hydride vapor phase epitaxy
NASA Astrophysics Data System (ADS)
Trassoudaine, Agnès; Roche, Elissa; Bougerol, Catherine; André, Yamina; Avit, Geoffrey; Monier, Guillaume; Ramdani, Mohammed Réda; Gil, Evelyne; Castelluci, Dominique; Dubrovskii, Vladimir G.
2016-11-01
Spontaneous GaN/AlN core-shell nanowires with high crystal quality were synthesized on sapphire substrates by vapor-liquid-solid hydride vapor phase epitaxy (VLS-HVPE) without any voluntary aluminum source. Deposition of aluminum is difficult to achieve in this growth technique which uses metal-chloride gaseous precursors: the strong interaction between the AlCl gaseous molecules and the quartz reactor yields a huge parasitic nucleation on the walls of the reactor upstream the substrate. We open up an innovative method to produce GaN/AlN structures by HVPE, thanks to aluminum etching from the sapphire substrate followed by redeposition onto the sidewalls of the GaN core. The paper presents the structural characterization of GaN/AlN core-shell nanowires, speculates on the growth mechanism and discusses a model which describes this unexpected behavior.
Rhombohedral Super Hetero Epitaxy of Cubic SiGe on Trigonal c-plane Sapphire
NASA Technical Reports Server (NTRS)
Choi, Sang H.; Duzik, Adam J.
2017-01-01
New rhombohedral super-hetero-epitaxy technology was developed at NASA. This epitaxy technology enables the growth of unprecedented cubic-trigonal hybrid single crystal structures with lattice match on sapphire (Al2O3) substrates, hence with little strain and very few defects at the interface.
Experimental Studies on Grooved Double Pipe Heat Exchanger with Different Groove Space
NASA Astrophysics Data System (ADS)
Sunu, P. W.; Arsawan, I. M.; Anakottapary, D. S.; Santosa, I. D. M. C.; Yasa, I. K. A.
2018-01-01
Experimental studies were performed on grooved double pipe heat exchanger (DPHE) with different groove space. The objective of this work is to determine optimal heat transfer parameter especially logarithmic mean temperature difference (LMTD). The document in this paper also provides the total heat observed by the cold fluid. The rectangular grooves were incised on outer surface of tube side with circumferential pattern and two different grooves space, namely 1 mm and 2 mm. The distance between grooves and the grooves high were kept constant, 8 mm and 0.3 mm respectively. The tube diameter is 20 mm and its made of aluminium. The shell is made of acrylic which has 28 mm in diameter. Water is used as the working fluid. Using counter flow scheme, the cold fluid flows in the annulus room of DPHE. The volume flowrate of hot fluid remains constant at 15 lpm. The volume flowrate of cold fluid were varied from 11 lpm to 15 lpm. Based on logarithmic mean temperature difference analysis, the LMTD of 1 mm grooves space was higher compared to that of 2 mm grooves space. The smaller grooves space has more advantage since the recirculating region are increased which essentially cause larger heat transfer enhancement.
Outwater, John O.
2000-01-01
A pressure vessel is provided for observing corrosive fluids at high temperatures and pressures. A transparent Teflon bag contains the corrosive fluid and provides an inert barrier. The Teflon bag is placed within a sapphire tube, which forms a pressure boundary. The tube is received within a pipe including a viewing window. The combination of the Teflon bag, sapphire tube and pipe provides a strong and inert pressure vessel. In an alternative embodiment, tie rods connect together compression fittings at opposite ends of the sapphire tube.
NASA Astrophysics Data System (ADS)
Zhang, Kexiong; Liang, Hongwei; Shen, Rensheng; Wang, Dongsheng; Tao, Pengcheng; Liu, Yang; Xia, Xiaochuan; Luo, Yingmin; Du, Guotong
2014-02-01
Negative differential resistance (NDR) behavior was observed in low Al-composition p-GaN/Mg-doped-Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate. The energy band and free carrier concentration of hetero-junction were studied by the model of the self-consistent solution of Schrödinger-Poisson equations combined with polarization engineering theory. At the forward bias of 0.95 V, the NDR effect has a high peak-to-valley current ratio of ˜9 with a peak current of 22.4 mA (˜current density of 11.4 A/cm2). An interesting phenomenon of NDR disappearance after consecutive scans and recurrence after electrical treatment was observed, which was associated with Poole-Frenkel effect.
Laser processing of sapphire with picosecond and sub-picosecond pulses
NASA Astrophysics Data System (ADS)
Ashkenasi, D.; Rosenfeld, A.; Varel, H.; Wähmer, M.; Campbell, E. E. B.
1997-11-01
Laser processing of sapphire using a Ti:sapphire laser at 790 and 395 nm and pulse widths varying between 0.2 and 5 ps is reported. A clear improvement in quality is demonstrated for multi-shot processing with sub-ps laser pulses. For fluences between 3 and 12 J/cm 2 two ablation phases were observed, in agreement with previous work from Tam et al. using 30 ps, 266 nm laser pulses [A.C. Tam, J.L. Brand, D.C. Cheng, W. Zapka, Appl. Phys. Lett. 55 (20) (1994) 2045]. During the `gentle ablation' phase periodic wavelike structures, i.e. ripples, were observed on the Al 2O 3 surface, perpendicular to the laser polarisation and with a spacing almost equalling the laser wavelength, indicating metallic-like behaviour. The ripple modulation depth was in the order of a few tens of nm. For fluences between 1 and 2.5 J/cm 2, below the single-shot surface damage threshold and at a pulse width above 200 fs, microstructures could be produced at the rear side of a 1 mm thick sapphire substrate without affecting the front surface.
Farah, John; Sudarshanam, Venkatapuram S.
2003-05-13
Polymer substrates, in particular polyimide substrates, and polymer laminates for optical applications are described. Polyimide substrates are polished on one or both sides depending on their thickness, and single-layer or multi-layer waveguide structures are deposited on the polished polyimide substrates. Optical waveguide devices are machined by laser ablation using a combination of IR and UV lasers. A waveguide-fiber coupler with a laser-machined groove for retaining the fiber is also disclosed.
NASA Astrophysics Data System (ADS)
Kim, Jongmyeong; Moon, Daeyoung; Lee, Seungmin; Lee, Donghyun; Yang, Duyoung; Jang, Jeonghwan; Park, Yongjo; Yoon, Euijoon
2018-05-01
Anisotropic in-plane strain and resultant linearly polarized photoluminescence (PL) of c-plane GaN layers were realized by using a stripe-shaped cavity-engineered sapphire substrate (SCES). High resolution X-ray reciprocal space mapping measurements revealed that the GaN layers on the SCES were under significant anisotropic in-plane strain of -0.0140% and -0.1351% along the directions perpendicular and parallel to the stripe pattern, respectively. The anisotropic in-plane strain in the GaN layers was attributed to the anisotropic strain relaxation due to the anisotropic arrangement of cavity-incorporated membranes. Linearly polarized PL behavior such as the observed angle-dependent shift in PL peak position and intensity comparable with the calculated value based on k.p perturbation theory. It was found that the polarized PL behavior was attributed to the modification of valence band structures induced by anisotropic in-plane strain in the GaN layers on the SCES.
Selection of optimal welding condition for GTA pulse welding in root-pass of V-groove butt joint
NASA Astrophysics Data System (ADS)
Yun, Seok-Chul; Kim, Jae-Woong
2010-12-01
In the manufacture of high-quality welds or pipeline, a full-penetration weld has to be made along the weld joint. Therefore, root-pass welding is very important, and its conditions have to be selected carefully. In this study, an experimental method for the selection of optimal welding conditions is proposed for gas tungsten arc (GTA) pulse welding in the root pass which is done along the V-grooved butt-weld joint. This method uses response surface analysis in which the width and height of back bead are chosen as quality variables of the weld. The overall desirability function, which is the combined desirability function for the two quality variables, is used as the objective function to obtain the optimal welding conditions. In our experiments, the target values of back bead width and height are 4 mm and zero, respectively, for a V-grooved butt-weld joint of a 7-mm-thick steel plate. The optimal welding conditions could determine the back bead profile (bead width and height) as 4.012 mm and 0.02 mm. From a series of welding tests, it was revealed that a uniform and full-penetration weld bead can be obtained by adopting the optimal welding conditions determined according to the proposed method.
Longitudinal afterbody grooves and shoulder radiusing for low-speed bluff body drag reduction
NASA Technical Reports Server (NTRS)
Howard, F. G.; Quass, B. F.; Weinstein, L. M.; Bushnell, D. M.
1981-01-01
A new low-speed drag reduction approach is proposed which employs longitudinal surface V-shaped grooves cutting through the afterbody shoulder region. The test Reynolds number range was from 20,000 to 200,000 based on undisturbed free-stream flow and a body diameter of 6.08 cm. The V-grooves are shown to be most effective in reducing drag when the afterbody shoulder radius is zero. Reductions in drag of up to 33% have been measured for this condition. For large shoulder radius, the grooves are only effective at the lower Reynolds numbers of the test.
Hwang, Jae-Yeol; Kim, Young-Min; Lee, Kyu Hyoung; Ohta, Hiromichi; Kim, Sung Wng
2017-10-11
Demands on high-quality layer structured two-dimensional (2D) thin films such as pnictogen chalcogenides and transition metal dichalcogenides are growing due to the findings of exotic physical properties and potentials for device applications. However, the difficulties in controlling epitaxial growth and the unclear understanding of van der Waals epitaxy (vdWE) for a 2D chalcogenide film on a three-dimensional (3D) substrate have been major obstacles for the further advances of 2D materials. Here, we exploit the spontaneous vdWE of a high-quality 2D chalcogenide (Bi 0.5 Sb 1.5 Te 3 ) film by the chalcogen-driven surface reconstruction of a conventional 3D sapphire substrate. It is verified that the in situ formation of a pseudomorphic Te atomic monolayer on the surface of sapphire, which results in a dangling bond-free surface, allows the spontaneous vdWE of 2D chalcogenide film. Since this route uses the natural surface reconstruction of sapphire with chalcogen under vacuum condition, it can be scalable and easily utilized for the developments of various 2D chalcogenide vdWE films through conventional thin-film fabrication technologies.
Gate-controlled-diodes in silicon-on-sapphire: A computer simulation
NASA Technical Reports Server (NTRS)
Gassaway, J. D.
1974-01-01
The computer simulation of the electrical behavior of a Gate-Controlled Diode (GCD) fabricated in Silicon-On-Sapphire (SOS) was described. A procedure for determining lifetime profiles from capacitance and reverse current measurements on the GCD was established. Chapter 1 discusses the SOS structure and points out the need of lifetime profiles to assist in device design for GCD's and bipolar transistors. Chapter 2 presents the one-dimensional analytical formula for electrostatic analysis of the SOS-GCD which are useful for data interpretation and setting boundary conditions on a simplified two-dimensional analysis. Chapter 3 gives the results of a two-dimensional analysis which treats the field as one-dimensional until the silicon film is depleted and the field penetrates the sapphire substrate. Chapter 4 describes a more complete two-dimensional model and gives results of programs implementing the model.
NASA Astrophysics Data System (ADS)
Iwano, Keisuke; Yamanoi, Kohei; Iwasa, Yuki; Mori, Kazuyuki; Minami, Yuki; Arita, Ren; Yamanaka, Takuma; Fukuda, Kazuhito; Empizo, Melvin John F.; Takano, Keisuke; Shimizu, Toshihiko; Nakajima, Makoto; Yoshimura, Masashi; Sarukura, Nobuhiko; Norimatsu, Takayoshi; Hangyo, Masanori; Azechi, Hiroshi; Singidas, Bess G.; Sarmago, Roland V.; Oya, Makoto; Ueda, Yoshio
2016-10-01
We investigate the optical transmittances of ion-irradiated sapphire crystals as potential vacuum ultraviolet (VUV) to near-infrared (NIR) window materials of fusion reactors. Under potential conditions in fusion reactors, sapphire crystals are irradiated with hydrogen (H), deuterium (D), and helium (He) ions with 1-keV energy and ˜ 1020-m-2 s-1 flux. Ion irradiation decreases the transmittances from 140 to 260 nm but hardly affects the transmittances from 300 to 1500 nm. H-ion and D-ion irradiation causes optical absorptions near 210 and 260 nm associated with an F-center and an F+-center, respectively. These F-type centers are classified as Schottky defects that can be removed through annealing above 1000 K. In contrast, He-ion irradiation does not cause optical absorptions above 200 nm because He-ions cannot be incorporated in the crystal lattice due to the large ionic radius of He-ions. Moreover, the significant decrease in transmittance of the ion-irradiated sapphire crystals from 140 to 180 nm is related to the light scattering on the crystal surface. Similar to diamond polishing, ion irradiation modifies the crystal surface thereby affecting the optical properties especially at shorter wavelengths. Although the transmittances in the VUV wavelengths decrease after ion irradiation, the transmittances can be improved through annealing above 1000 K. With an optical transmittance in the VUV region that can recover through simple annealing and with a high transparency from the ultraviolet (UV) to the NIR region, sapphire crystals can therefore be used as good optical windows inside modern fusion power reactors in terms of light particle loadings of hydrogen isotopes and helium.
Miniature Sapphire Acoustic Resonator - MSAR
NASA Technical Reports Server (NTRS)
Wang, Rabi T.; Tjoelker, Robert L.
2011-01-01
A room temperature sapphire acoustics resonator incorporated into an oscillator represents a possible opportunity to improve on quartz ultrastable oscillator (USO) performance, which has been a staple for NASA missions since the inception of spaceflight. Where quartz technology is very mature and shows a performance improvement of perhaps 1 dB/decade, these sapphire acoustic resonators when integrated with matured quartz electronics could achieve a frequency stability improvement of 10 dB or more. As quartz oscillators are an essential element of nearly all types of frequency standards and reference systems, the success of MSAR would advance the development of frequency standards and systems for both groundbased and flight-based projects. Current quartz oscillator technology is limited by quartz mechanical Q. With a possible improvement of more than x 10 Q with sapphire acoustic modes, the stability limit of current quartz oscillators may be improved tenfold, to 10(exp -14) at 1 second. The electromagnetic modes of sapphire that were previously developed at JPL require cryogenic temperatures to achieve the high Q levels needed to achieve this stability level. However sapphire fs acoustic modes, which have not been used before in a high-stability oscillator, indicate the required Q values (as high as Q = 10(exp 8)) may be achieved at room temperature in the kHz range. Even though sapphire is not piezoelectric, such a high Q should allow electrostatic excitation of the acoustic modes with a combination of DC and AC voltages across a small sapphire disk (approximately equal to l mm thick). The first evaluations under this task will test predictions of an estimated input impedance of 10 kilohms at Q = 10(exp 8), and explore the Q values that can be realized in a smaller resonator, which has not been previously tested for acoustic modes. This initial Q measurement and excitation demonstration can be viewed similar to a transducer converting electrical energy to
A peek into the history of sapphire crystal growth
NASA Astrophysics Data System (ADS)
Harris, Daniel C.
2003-09-01
After the chemical compositions of sapphire and ruby were unraveled in the middle of the 19th century, chemists set out to grow artificial crystals of these valuable gemstones. In 1885 a dealer in Geneva began to sell ruby that is now believed to have been created by flame fusion. Gemnologists rapidly concluded that the stones were artificial, but the Geneva ruby stimulated A. V. L. Verneuil in Paris to develop a flame fusion process to produce higher quality ruby and sapphire. By 1900 there was brisk demand for ruby manufactured by Verneuil's method, even though Verneuil did not publicly announce his work until 1902 and did not publish details until 1904. The Verneuil process was used with little alteration for the next 50 years. From 1932-1953, S. K. Popov in the Soviet Union established a capability for manufacturing high quality sapphire by the Verneuil process. In the U.S., under government contract, Linde Air Products Co. implemented the Verneuil process for ruby and sapphire when European sources were cut off during World War II. These materials were essential to the war effort for jewel bearings in precision instruments. In the 1960s and 1970s, the Czochralski process was implemented by Linde and its successor, Union Carbide, to make higher crystal quality material for ruby lasers. Stimulated by a government contract for structural fibers in 1966, H. LaBelle invented edge-defined film-fed growth (EFG). The Saphikon company, which is currently owned by Saint-Gobain, evolved from this effort. Independently and simultaneously, Stepanov developed edge-defined film-fed growth in the Soviet Union. In 1967 F. Schmid and D. Viechnicki at the Army Materials Research Lab grew sapphire by the heat exchanger method (HEM). Schmid went on to establish Crystal Systems, Inc. around this technology. Rotem Industries, founded in Israel in 1969, perfected the growth of sapphire hemispheres and near-net-shape domes by gradient solidification. In the U.S., growth of near
Advances in sapphire optical fiber sensors
NASA Technical Reports Server (NTRS)
Wang, Anbo; Wang, George Z.; Gollapudi, Sridhar; May, Russell G.; Murphy, Kent A.; Claus, Richard O.
1993-01-01
We describe the development and testing of two sapphire fiber sensor designs intended for use in high temperature environments. The first is a birefringence-balanced polarimetric sapphire fiber sensor. In this sensor, two single crystal sapphire rods, acting as the birefringence sensing element, are connected to each other in such a way that the slow axis of the first rod is aligned along with the fast axis of the second rod, and the fast axis of the first rod is along the slow axis of the second rod. This sensor has been demonstrated for measurement of temperature up to 1500 C. The second is a sapphire-fiber-based intrinsic interferometric sensor. In this sensor, a length of uncoated, unclad, structural-graded multimode sapphire fiber is fusion spliced to a singlemode silica fiber to form a Fabry-Perot cavity. The reflections from the silica-to-sapphire fiber splice and the free endface of the sapphire fiber give rise to the interfering fringe output. This sensor has been demonstrated for the measurement of temperature above 1510 C, and a resolution of 0.1 C has been obtained.
Photonics of 2D gold nanolayers on sapphire surface
DOE Office of Scientific and Technical Information (OSTI.GOV)
Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Nabatov, B. V.
Gold layers with thicknesses of up to several nanometers, including ordered and disordered 2D nanostructures of gold particles, have been formed on sapphire substrates; their morphology is described; and optical investigations are carried out. The possibility of increasing the accuracy of predicting the optical properties of gold layers and 2D nanostructures using quantum-mechanical models based on functional density theory calculation techniques is considered. The application potential of the obtained materials in photonics is estimated.
Structural characterization of ZnO thin films grown on various substrates by pulsed laser deposition
NASA Astrophysics Data System (ADS)
Novotný, M.; Čížek, J.; Kužel, R.; Bulíř, J.; Lančok, J.; Connolly, J.; McCarthy, E.; Krishnamurthy, S.; Mosnier, J.-P.; Anwand, W.; Brauer, G.
2012-06-01
ZnO thin films were grown by pulsed laser deposition on three different substrates: sapphire (0 0 0 1), MgO (1 0 0) and fused silica (FS). The structure and morphology of the films were characterized by x-ray diffraction and scanning electron microscopy and defect studies were carried out using slow positron implantation spectroscopy (SPIS). Films deposited on all substrates studied in this work exhibit the wurtzite ZnO structure and are characterized by an average crystallite size of 20-100 nm. However, strong differences in the microstructure of films deposited on various substrates were found. The ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit local epitaxy, i.e. a well-defined relation between film crystallites and the substrate. Domains with different orientation relationships with the substrate were found in both films. On the other hand, the film deposited on the FS substrate exhibits fibre texture with random lateral orientation of crystallites. Extremely high compressive in-plane stress of σ ˜ 14 GPa was determined in the film deposited on the MgO substrate, while the film deposited on sapphire is virtually stress-free, and the film deposited on the FS substrate exhibits a tensile in-plane stress of σ ˜ 0.9 GPa. SPIS investigations revealed that the concentration of open-volume defects in the ZnO films is substantially higher than that in a bulk ZnO single crystal. Moreover, the ZnO films deposited on MgO and sapphire single-crystalline substrates exhibit a significantly higher density of defects than the film deposited on the amorphous FS substrate.
A Surface Groove Essential for Viral Bcl-2 Function During Chronic Infection In Vivo
Petros, Andrew M; Nettesheim, David; van Dyk, Linda F.; Labrada, Lucia; Speck, Samuel H; Levine, Beth
2005-01-01
Antiapoptotic Bcl-2 family proteins inhibit apoptosis in cultured cells by binding BH3 domains of proapoptotic Bcl-2 family members via a hydrophobic BH3 binding groove on the protein surface. We investigated the physiological importance of the BH3 binding groove of an antiapoptotic Bcl-2 protein in mammals in vivo by analyzing a viral Bcl-2 family protein. We show that the γ-herpesvirus 68 (γHV68) Bcl-2 family protein (γHV68 v-Bcl-2), which is known to inhibit apoptosis in cultured cells, inhibits both apoptosis in primary lymphocytes and Bax toxicity in yeast. Nuclear magnetic resonance determination of the γHV68 v-Bcl-2 structure revealed a BH3 binding groove that binds BH3 domain peptides from proapoptotic Bcl-2 family members Bax and Bak via a molecular mechanism shared with host Bcl-2 family proteins, involving a conserved arginine in the BH3 peptide binding groove. Mutations of this conserved arginine and two adjacent amino acids to alanine (SGR to AAA) within the BH3 binding groove resulted in a properly folded protein that lacked the capacity of the wild-type γHV68 v-Bcl-2 to bind Bax BH3 peptide and to block Bax toxicity in yeast. We tested the physiological importance of this v-Bcl-2 domain during viral infection by engineering viral mutants encoding a v-Bcl-2 containing the SGR to AAA mutation. This mutation resulted in a virus defective for both efficient reactivation of γHV68 from latency and efficient persistent γHV68 replication. These studies demonstrate an essential functional role for amino acids in the BH3 peptide binding groove of a viral Bcl-2 family member during chronic infection. PMID:16201011
NASA Astrophysics Data System (ADS)
Noorprajuda, Marsetio; Ohtsuka, Makoto; Fukuyama, Hiroyuki
2018-04-01
The effect of oxygen partial pressure (PO2) on polarity and crystalline quality of AlN films grown on nitrided a-plane sapphire substrates by pulsed direct current (DC) reactive sputtering was investigated as a fundamental study. The polarity inversion of AlN from nitrogen (-c)-polarity to aluminum (+c)-polarity occurred during growth at a high PO2 of 9.4×103 Pa owing to Al-O octahedral formation at the interface of nitrided layer and AlN sputtered film which reset the polarity of AlN. The top part of the 1300 nm-thick AlN film sputtered at the high PO2 was polycrystallized. The crystalline quality was improved owing to the high kinetic energy of Al sputtered atom in the sputtering phenomena. Thinner AlN films were also fabricated at the high PO2 to eliminate the polycrystallization. For the 200 nm-thick AlN film sputtered at the high PO2, the full width at half-maximum values of the AlN (0002) and (10-12) X-ray diffraction rocking curves were 47 and 637 arcsec, respectively.
Bonding of sapphire to sapphire by eutectic mixture of aluminum oxide and zirconium oxide
NASA Technical Reports Server (NTRS)
Deluca, J. J. (Inventor)
1975-01-01
Bonding of an element comprising sapphire, ruby or blue sapphire to another element of such material with a eutectic mixture of aluminum oxide and zirconium oxide is discussed. The bonding mixture may be applied in the form of a distilled water slurry or by electron beam vapor deposition. In one embodiment the eutectic is formed in situ by applying a layer of zirconium oxide and then heating the assembly to a temperature above the eutectic temperature and below the melting point of the material from which the elements are formed. The formation of a sapphire rubidium maser cell utilizing eutectic bonding is shown.
Efficient evaluation of epitaxial MoS2 on sapphire by direct band structure imaging
NASA Astrophysics Data System (ADS)
Kim, Hokwon; Dumcenco, Dumitru; Fregnaux, Mathieu; Benayad, Anass; Kung, Yen-Cheng; Kis, Andras; Renault, Olivier; Lanes Group, Epfl Team; Leti, Cea Team
The electronic band structure evaluation of two-dimensional metal dichalcogenides is critical as the band structure can be greatly influenced by the film thickness, strain, and substrate. Here, we performed a direct measurement of the band structure of as-grown monolayer MoS2 on single crystalline sapphire by reciprocal-space photoelectron emission microscopy with a conventional laboratory ultra-violet He I light source. Arrays of gold electrodes were deposited onto the sample in order to avoid charging effects due to the insulating substrate. This allowed the high resolution mapping (ΔE = 0.2 eV Δk = 0.05 Å-1) of the valence states in momentum space down to 7 eV below the Fermi level. The high degree of the epitaxial alignment of the single crystalline MoS2 nuclei was verified by the direct momentum space imaging over a large area containing multiple nuclei. The derived values of the hole effective mass were 2.41 +/-0.05 m0 and 0.81 +/-0.05 m0, respectively at Γ and K points, consistent with the theoretical values of the freestanding monolayer MoS2 reported in the literature. HK acknowledges the french CEA Basic Technological Research program (RTB) for funding.
Pan, Jui-Wen; Tsai, Pei-Jung; Chang, Kao-Der; Chang, Yung-Yuan
2013-03-01
In this paper, we propose a method to analyze the light extraction efficiency (LEE) enhancement of a nanopatterned sapphire substrates (NPSS) light-emitting diode (LED) by comparing wave optics software with ray optics software. Finite-difference time-domain (FDTD) simulations represent the wave optics software and Light Tools (LTs) simulations represent the ray optics software. First, we find the trends of and an optimal solution for the LEE enhancement when the 2D-FDTD simulations are used to save on simulation time and computational memory. The rigorous coupled-wave analysis method is utilized to explain the trend we get from the 2D-FDTD algorithm. The optimal solution is then applied in 3D-FDTD and LTs simulations. The results are similar and the difference in LEE enhancement between the two simulations does not exceed 8.5% in the small LED chip area. More than 10(4) times computational memory is saved during the LTs simulation in comparison to the 3D-FDTD simulation. Moreover, LEE enhancement from the side of the LED can be obtained in the LTs simulation. An actual-size NPSS LED is simulated using the LTs. The results show a more than 307% improvement in the total LEE enhancement of the NPSS LED with the optimal solution compared to the conventional LED.
Burton, Harry; Debardelaben, Christopher; Amir, Wafa; Planchon, Thomas A
2017-03-20
The fluorescence spectra of titanium doped sapphire (Ti:Sapphire) crystals were measured for temperature ranging from 300K to 77K. The resulting gain cross-section line shapes were calculated and used in a three-dimensional amplification model to illustrate the importance of the precise knowledge of these fluorescence spectra for the design of cryogenic cooled Ti:Sapphire based chirped-pulse laser amplifiers.
Morphological stability of sapphire crystallization front
DOE Office of Scientific and Technical Information (OSTI.GOV)
Baranov, V. V., E-mail: baranov.isc@gmail.com; Nizhankovskyi, S. V.
2016-03-15
The main factors and specificity of growth conditions for sapphire and Ti:sapphire crystals, which affect the morphological stability of the crystal–melt interface, have been investigated with allowance for the concentration and radiative melt supercooling. It is shown that the critical sapphire growth rate is determined to a great extent by the optical transparency of the melt and the mixing conditions near the crystallization front.
NASA Astrophysics Data System (ADS)
Palke, Aaron C.; Renfro, Nathan D.; Berg, Richard B.
2017-05-01
We report here compositions of glassy melt inclusions hosted in sapphires (gem quality corundum) from three alluvial deposits in Montana, USA including the Rock Creek, Dry Cottonwood Creek, and Missouri River deposits. While it is likely that sapphires in these deposits were transported to the surface by Eocene age volcanic events, their ultimate origin is still controversial with many models suggesting the sapphires are xenocrysts with a metamorphic or metasomatic genesis. Melt inclusions are trachytic, dacitic, and rhyolitic in composition. Microscopic observations allow separation between primary and secondary melt inclusions. The primary melt inclusions represent the silicate liquid that was present at the time of sapphire formation and are enriched in volatile components (8-14 wt.%). Secondary melt inclusions analyzed here for Dry Cottonwood Creek and Rock Creek sapphires are relatively volatile depleted and represent the magma that carried the sapphires to the surface. We propose that alluvial Montana sapphires from these deposits formed through a peritectic melting reaction during partial melting of a hydrated plagioclase-rich protolith (e.g. an anorthosite). The heat needed to drive this reaction was likely derived from the intrusion of mantle-derived mafic magmas near the base of the continental lithosphere during rollback of the Farallon slab around 50 Ma. These mafic magmas may have ended up as the ultimate carrier of the sapphires to the surface as evidenced by the French Bar trachybasalt near the Missouri River deposit. Alternatively, the trachytic, rhyolitic, and dacitic secondary melt inclusions at Rock Creek and Dry Cottonwood Creek suggests that the same magmas produced during the partial melting event that generated the sapphires may have also transported them to the surface. Determining the genesis of these deposits will further our understanding of sapphire deposits around the world and may help guide future sapphire prospecting techniques. This
Detection of beryllium treatment of natural sapphires by NRA
NASA Astrophysics Data System (ADS)
Gutiérrez, P. C.; Ynsa, M.-D.; Climent-Font, A.; Calligaro, T.
2010-06-01
Since the 1990's, artificial treatment of natural sapphires (Al 2O 3 crystals coloured by impurities) by diffusion of beryllium at high temperature has become a growing practice. This process permits to enhance the colour of these gemstones, and thus to increase their value. Detection of such a treatment - diffusion of tens of μg/g of beryllium in Al 2O 3 crystals - is usually achieved using high sensitivity techniques like laser-ablation inductively coupled plasma mass spectrometry (LA-ICP/MS) or laser-induced breakdown spectrometry (LIBS) which are unfortunately micro-destructive (leaving 50-100-μm diameter craters on the gems). The simple and non-destructive alternative method proposed in this work is based on the nuclear reaction 9Be(α, nγ) 12C with an external helium ion beam impinging on the gem directly placed in air. The 4439 keV prompt γ-ray tagging Be atoms are detected with a high efficiency bismuth germanate scintillator. Beam dose is monitored using the 2235 keV prompt γ-ray produced during irradiation by the aluminium of the sapphire matrix through the 27Al(α, pγ) 30Si nuclear reaction. The method is tested on a series of Be-treated sapphires previously analyzed by LA-ICP/MS to determine the optimal conditions to obtain a peak to background appropriate to reach the required μg/g sensitivity. Using a 2.8-MeV external He beam and a beam dose of 200 μC, beryllium concentrations from 5 to 16 μg/g have been measured in the samples, with a detection limit of 1 μg/g.
NASA Astrophysics Data System (ADS)
Guo, Shusen; Cao, Yongzhi; Sun, Tao; Zhang, Junjie; Gu, Le; Zhang, Chuanwei; Xu, Zhiqiang
2018-05-01
Molecular dynamics (MD) simulations were used to provide insights into the influence of nano-scale surface morphology on adsorptive behavior of Potassium stearate molecules on diamond-like carbon (DLC) substrates. Particular focus was given to explain that how the distinctive geometric properties of different surface morphologies affect the equilibrium structures and substrate-molecules interactions of monolayers, which was achieved through adsorptive analysis methods including adsorptive process, density profile, density distribution and surface potential energy. Analysis on surface potential energy demonstrated that the adsorptivity of amorphous smooth substrate is uniformly distributed over the surface, while DLC substrates with different surface morphologies appear to be more potentially corrugated, which improves the adsorptivity significantly. Because of the large distance of molecules from carbon atoms located at the square groove bottom, substrate-molecules interactions vanish significantly, and thus potassium stearate molecules cannot penetrate completely into the square groove. It can be observed that the equilibrium substrate-molecules interactions of triangle groove and semi-circle groove are much more powerful than that of square groove due to geometrically advantageous properties. These findings provided key information of optimally design of solid substrates with controllable adsorptivity.
NASA Astrophysics Data System (ADS)
Park, Soohyung; Mutz, Niklas; Schultz, Thorsten; Blumstengel, Sylke; Han, Ali; Aljarb, Areej; Li, Lain-Jong; List-Kratochvil, Emil J. W.; Amsalem, Patrick; Koch, Norbert
2018-04-01
Understanding the excitonic nature of excited states in two-dimensional (2D) transition-metal dichalcogenides (TMDCs) is of key importance to make use of their optical and charge transport properties in optoelectronic applications. We contribute to this by the direct experimental determination of the exciton binding energy (E b,exc) of monolayer MoS2 and WSe2 on two fundamentally different substrates, i.e. the insulator sapphire and the metal gold. By combining angle-resolved direct and inverse photoelectron spectroscopy we measure the electronic band gap (E g), and by reflectance measurements the optical excitonic band gap (E exc). The difference of these two energies is E b,exc. The values of E g and E b,exc are 2.11 eV and 240 meV for MoS2 on sapphire, and 1.89 eV and 240 meV for WSe2 on sapphire. On Au E b,exc is decreased to 90 meV and 140 meV for MoS2 and WSe2, respectively. The significant E b,exc reduction is primarily due to a reduction of E g resulting from enhanced screening by the metal, while E exc is barely decreased for the metal support. Energy level diagrams determined at the K-point of the 2D TMDCs Brillouin zone show that MoS2 has more p-type character on Au as compared to sapphire, while WSe2 appears close to intrinsic on both. These results demonstrate that the impact of the dielectric environment of 2D TMDCs is more pronounced for individual charge carriers than for a correlated electron-hole pair, i.e. the exciton. A proper dielectric surrounding design for such 2D semiconductors can therefore be used to facilitate superior optoelectronic device function.
Preparation of a Non-Polar ZnO Film on a Single-Crystal NdGaO3 Substrate by the RF Sputtering Method
NASA Astrophysics Data System (ADS)
Kashiwaba, Y.; Tanaka, Y.; Sakuma, M.; Abe, T.; Imai, Y.; Kawasaki, K.; Nakagawa, A.; Niikura, I.; Kashiwaba, Y.; Osada, H.
2018-04-01
Preparation of non-polar ZnO ( 11\\overline{2} 0 ) films on single-crystal NdGaO3 (NGO) (001) substrates was successfully achieved by the radio frequency (RF) sputtering method. Orientation, deposition rate, and surface roughness of ZnO films strongly depend on the working pressure. Characteristics of ZnO films deposited on single-crystal NGO (001) substrates were compared with those of ZnO films deposited on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. An x-ray diffraction peak of the ZnO ( 11\\overline{2} 0 ) plane was observed on ZnO films deposited on single-crystal NGO (001) substrates under working pressure of less than 0.5 Pa. On the other hand, uniaxially oriented ZnO ( 11\\overline{2} 0 ) films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates were observed under working pressure of 0.1 Pa. The mechanism by which the diffraction angle of the ZnO ( 11\\overline{2} 0 ) plane on single-crystal NGO (001) substrates was shifted is discussed on the basis of anisotropic stress of lattice mismatch. The deposition rate of ZnO films decreased with an increase in working pressure, and the deposition rate on single-crystal NGO (001) substrates was larger than that on single-crystal sapphire ( 01\\overline{1} 2 ) substrates. Root mean square (RMS) roughness of ZnO films increased with an increase in working pressure, and RMS roughness of ZnO films on single-crystal NGO (001) substrates was smaller than that of ZnO films on single-crystal sapphire ( 01\\overline{1} 2 ) substrates even though the film thickness on single-crystal NGO (001) substrates was greater than that on sapphire substrates. It is thought that a single-crystal NGO (001) substrate is useful for deposition of non-polar ZnO ( 11\\overline{2} 0 ) films.
The study of optical property of sapphire irradiated with 73 MeV Ca ions
NASA Astrophysics Data System (ADS)
Yang, Yitao; Zhang, Chonghong; Song, Yin; Gou, Jie; Liu, Juan; Xian, Yongqiang
2015-12-01
Single crystals of sapphire were irradiated with 73 MeV Ca ions at room temperature to the fluences of 0.1, 0.5 and 1.0 × 1014 ions/cm2. Optical properties of these samples were characterized by ultraviolet-visible spectrometry (UV-VIS) and fluorescence spectrometer (PL). In UV-VIS spectra, it is observed the absorbance bands from oxygen single vacancy (F and F+ color centers) and vacancy pair (F2+ and F22+ color centers). The oxygen single vacancy initially increases rapidly and then does not increase in the fluence range from 0.1 to 0.5 × 1014 ions/cm2. When the fluence is higher than 0.5 × 1014 ions/cm2, oxygen single vacancy starts to increase again. Oxygen vacancy pair increases monotonically with fluence for all irradiated samples. The variation of oxygen single vacancy with fluence is probably associated with the recombination of oxygen vacancies with Al interstitials and complex defect formation (such as vacancy clusters). From PL spectra, two emission bands around 3.1 and 2.34 eV are observed. The PL intensity of the emission band around 3.1 eV decreases for all the irradiated samples. For the emission band around 2.34 eV, the PL intensity initially decreases, and then increases with fluence. Meanwhile, the peak position of the emission band around 2.34 eV gradually shifts to high energy direction with increase of fluence. The decrease of the intensity of the emission bands around 3.1 and 2.34 eV could be induced by stress from the damage layer in the irradiated samples. The shift of peak position for the emission band around 2.34 eV is induced by the appearance of emission band from Al interstitials.
Enhanced tunability of magnetron sputtered Ba0.5Sr0.5TiO3 thin films on c-plane sapphire substrates
NASA Astrophysics Data System (ADS)
Fardin, E. A.; Holland, A. S.; Ghorbani, K.; Reichart, P.
2006-07-01
Thin films of Ba0.5Sr0.5TiO3 (BST) were deposited on c-plane (0001) sapphire by rf magnetron sputtering and investigated by complementary materials analysis methods. Microwave properties of the films, including tunability and Q factor were measured from 1to20GHz by patterning interdigital capacitors (IDCs) on the film surface. The tunability is correlated with texture, strain, and grain size in the deposited films. An enhanced capacitance tunability of 56% at a bias field of 200kV/cm and total device Q of more than 15 (up to 20GHz) were achieved following postdeposition annealing at 900°C.
NASA Astrophysics Data System (ADS)
Baldwin, L. C.; Tomaschek, F.; Ballhaus, C.; Gerdes, A.; Fonseca, R. O. C.; Wirth, R.; Geisler, T.; Nagel, T.
2017-06-01
Megacrystic sapphires are frequently associated with alkaline basalts, most notably in Asia and Australia, although basalt is not generally normative in corundum. Most of these sapphire occurrences are located in alluvial or eluvial deposits, making it difficult to study the enigmatic relationship between the sapphires and their host rocks. Here, we present detailed petrological and geochemical investigations of in situ megacrystic sapphires within alkaline basalts from the Cenozoic Siebengebirge Volcanic Field (SVF) in Germany. Markedly, the sapphires show several micrometer thick spinel coronas at the contact with the host basalt, indicating chemical disequilibrium between the sapphire and the basaltic melt, supporting a xenogenetic relationship. However, in situ U-Pb dating of a Columbite Group inclusion within one Siebengebirge sapphire using laser ablation-inductively coupled plasma-mass spectrometry (LA-ICP-MS) indicates a close genetic relationship between sapphire crystallization and alkaline mafic volcanism in the SVF. The syngenetic mineral inclusion suite including carbonates, members of the Pyrochlore, Betafite and Columbite Groupe minerals, as well as a high abundance of HFSE and of gaseous low-density CO2 inclusions support a parentage of a highly evolved, MgO and FeO deficient carbonatitic melt. We identified CO2 to be the link between alkaline basaltic volcanism and the xenocrystic sapphires. Only alkaline volcanic suites can build up enough CO2 in this magma chamber upon fractionation so that at high degrees of fractionation a carbonatitic melt exsolves which in turn can crystallize sapphires.
Kellogg, Harvey J.; Holm, Robert O.
1983-01-01
A groove refinishing tool which utilizes a finishing wheel which is controlled by an air grinder motor. The air grinder motor is mounted on a main body section which is pivotally attached to a shoe element. The shoe element contains guide pins which guide the shoe element on the groove to be refinished. Application of pressure on the main body element compresses a weight counterbalance spring to extend the finishing wheel through the shoe element to refinish the groove surface. A window is provided for viewing the refinishing operation. Milling operations can also be performed by replacing the finishing wheel with a milling wheel.
NASA Astrophysics Data System (ADS)
Didenko, N. V.; Konyashchenko, A. V.; Konyashchenko, D. A.; Kostryukov, P. V.; Kuritsyn, I. I.; Lutsenko, A. P.; Mavritskiy, A. O.
2017-02-01
A laser system utilising the method of synchronous pumping of a Ti : sapphire laser by a high-power femtosecond Yb3+-doped laser is described. The pulse repetition rate of the Ti : sapphire laser is successfully locked to the repetition rate of the Yb laser for more than 6 hours without the use of any additional electronics. The measured timing jitter is shown to be less than 1 fs. A simple qualitative model addressing the synchronisation mechanism utilising the cross-phase modulation of oscillation and pump pulses within a Ti : sapphire active medium is proposed. Output parameters of the Ti : sapphire laser as functions of its cavity length are discussed in terms of this model.
Natural substrate lift-off technique for vertical light-emitting diodes
NASA Astrophysics Data System (ADS)
Lee, Chia-Yu; Lan, Yu-Pin; Tu, Po-Min; Hsu, Shih-Chieh; Lin, Chien-Chung; Kuo, Hao-Chung; Chi, Gou-Chung; Chang, Chun-Yen
2014-04-01
Hexagonal inverted pyramid (HIP) structures and the natural substrate lift-off (NSLO) technique were demonstrated on a GaN-based vertical light-emitting diode (VLED). The HIP structures were formed at the interface between GaN and the sapphire substrate by molten KOH wet etching. The threading dislocation density (TDD) estimated by transmission electron microscopy (TEM) was reduced to 1 × 108 cm-2. Raman spectroscopy indicated that the compressive strain from the bottom GaN/sapphire was effectively released through the HIP structure. With the adoption of the HIP structure and NSLO, the light output power and yield performance of leakage current could be further improved.
GaN-based light-emitting diodes on various substrates: a critical review.
Li, Guoqiang; Wang, Wenliang; Yang, Weijia; Lin, Yunhao; Wang, Haiyan; Lin, Zhiting; Zhou, Shizhong
2016-05-01
GaN and related III-nitrides have attracted considerable attention as promising materials for application in optoelectronic devices, in particular, light-emitting diodes (LEDs). At present, sapphire is still the most popular commercial substrate for epitaxial growth of GaN-based LEDs. However, due to its relatively large lattice mismatch with GaN and low thermal conductivity, sapphire is not the most ideal substrate for GaN-based LEDs. Therefore, in order to obtain high-performance and high-power LEDs with relatively low cost, unconventional substrates, which are of low lattice mismatch with GaN, high thermal conductivity and low cost, have been tried as substitutes for sapphire. As a matter of fact, it is not easy to obtain high-quality III-nitride films on those substrates for various reasons. However, by developing a variety of techniques, distincts progress has been made during the past decade, with high-performance LEDs being successfully achieved on these unconventional substrates. This review focuses on state-of-the-art high-performance GaN-based LED materials and devices on unconventional substrates. The issues involved in the growth of GaN-based LED structures on each type of unconventional substrate are outlined, and the fundamental physics behind these issues is detailed. The corresponding solutions for III-nitride growth, defect control, and chip processing for each type of unconventional substrate are discussed in depth, together with a brief introduction to some newly developed techniques in order to realize LED structures on unconventional substrates. This is very useful for understanding the progress in this field of physics. In this review, we also speculate on the prospects for LEDs on unconventional substrates.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Lee, Kyuseung; Chae, Sooryong; Jang, Jongjin
2016-04-15
In this study, self-assembled inclined (1-10-3)-oriented GaN nanorods (NRs) were grown on nanoimprinted (10-10) m-sapphire substrates using catalyst-free metal-organic chemical vapor deposition. According to X-ray phi-scans, the inclined GaN NRs were tilted at an angle of ∼57.5° to the [10-10]{sub sapp} direction. Specifically, the GaN NRs grew in a single inclined direction to the [11-20]{sub sapp}. Uni-directionally inclined NRs were formed through the one-sided (10-11)-faceted growth of the interfacial a-GaN plane layer. It was confirmed that a thin layer of a-GaN was formed on r-facet nanogrooves of the m-sapphire substrate by nitridation. The interfacial a-GaN nucleation affected both the inclinedmore » angle and the growth direction of the inclined GaN NRs. Using X-ray diffraction and selective area electron diffraction, the epitaxial relationship between the inclined (1-10-3) GaN NRs and interfacial a-GaN layer on m-sapphire substrates was systematically investigated. Moreover, the inclined GaN NRs were observed to be mostly free of stacking fault-related defects using high-resolution transmission electron microscopy.« less
Hall thruster with grooved walls
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li Hong; Ning Zhongxi; Yu Daren
2013-02-28
Axial-oriented and azimuthal-distributed grooves are formed on channel walls of a Hall thruster after the engine undergoes a long-term operation. Existing studies have demonstrated the relation between the grooves and the near-wall physics, such as sheath and electron near-wall transport. The idea to optimize the thruster performance with such grooves was also proposed. Therefore, this paper is devoted to explore the effects of wall grooves on the discharge characteristics of a Hall thruster. With experimental measurements, the variations on electron conductivity, ionization distribution, and integrated performance are obtained. The involved physical mechanisms are then analyzed and discussed. The findings helpmore » to not only better understand the working principle of Hall thruster discharge but also establish a physical fundamental for the subsequent optimization with artificial grooves.« less
Spectral analysis of groove spacing on Ganymede
NASA Technical Reports Server (NTRS)
Grimm, R. E.; Squyres, S. W.
1985-01-01
A quantitative analysis of groove spacing on Ganymede is described. Fourier transforms of a large number of photometric profiles across groove sets are calculated and the resulting power spectra are examined for the position and strength of peaks representing topographic periodicities. The geographic and global statistical distribution of groove wavelengths are examined, and these data are related to models of groove tectonism. It is found that groove spacing on Ganymede shows an approximately long-normal distribution with a minimum of about 3.5 km, a maximum of about 17 km, and a mean of 8.4 km. Groove spacing tends to be quite regular within a single groove set but can vary substantially from one groove set to another within a single geographic region.
Development of a sapphire optical pressure sensor for high-temperature applications
NASA Astrophysics Data System (ADS)
Mills, David A.; Alexander, Dylan; Subhash, Ghatu; Sheplak, Mark
2014-06-01
This paper presents the fabrication, packaging, and characterization of a sapphire optical pressure sensor for hightemperature applications. Currently available instrumentation poses significant limitations on the ability to achieve realtime, continuous measurements in high-temperature environments such as those encountered in industrial gas turbines and high-speed aircraft. The fiber-optic lever design utilizes the deflection of a circular platinum-coated sapphire diaphragm to modulate the light reflected back to a single send/receive sapphire optical fiber. The 7 mm diameter, 50 μm thick diaphragm is attached using a novel thermocompression bonding process based on spark plasma sintering technology. Bonds using platinum as an intermediate layer are achieved at a temperature of 1200°C with a hold time of 5 min. Initial characterization of the bond interface using a simple tensile test indicates a bond strength in excess of 12 MPa. Analysis of the buckled diaphragm after bonding is also presented. The packaged sensor enables continuous operation up to 900°C. Room-temperature characterization reveals a first resonance of 18.2 kHz, a flat-band sensitivity of -130 dB re 1 V/Pa (0.32 μV/Pa) from 4-20 kHz, a minimum detectable pressure of 3.8 Pa, and a linear response up to 169 dB at 1.9 kHz.
Neutron Transmission of Single-crystal Sapphire Filters
NASA Astrophysics Data System (ADS)
Adib, M.; Kilany, M.; Habib, N.; Fathallah, M.
2005-05-01
An additive formula is given that permits the calculation of the nuclear capture, thermal diffuse and Bragg scattering cross-sections as a function of sapphire temperature and crystal parameters. We have developed a computer program that allows calculations of the thermal neutron transmission for the sapphire rhombohedral structure and its equivalent trigonal structure. The calculated total cross-section values and effective attenuation coefficient for single-crystalline sapphire at different temperatures are compared with measured values. Overall agreement is indicated between the formula and experimental data. We discuss the use of sapphire single crystal as a thermal neutron filter in terms of the optimum cystal thickness, mosaic spread, temperature, cutting plane and tuning for efficient transmission of thermal-reactor neutrons.
Leveraging Python Interoperability Tools to Improve Sapphire's Usability
DOE Office of Scientific and Technical Information (OSTI.GOV)
Gezahegne, A; Love, N S
2007-12-10
The Sapphire project at the Center for Applied Scientific Computing (CASC) develops and applies an extensive set of data mining algorithms for the analysis of large data sets. Sapphire's algorithms are currently available as a set of C++ libraries. However many users prefer higher level scripting languages such as Python for their ease of use and flexibility. In this report, we evaluate four interoperability tools for the purpose of wrapping Sapphire's core functionality with Python. Exposing Sapphire's functionality through a Python interface would increase its usability and connect its algorithms to existing Python tools.
Local-scale stratigraphy of grooved terrain on Ganymede
NASA Technical Reports Server (NTRS)
Murchie, Scott L.; Head, James W.; Helfenstein, Paul; Plescia, Jeffrey B.
1987-01-01
The surface of the Jovian satellite, Ganymede, is divided into two main units, dark terrain cut by arcuate and subradial furrows, and light terrain consisting largely of areas with pervasive U-shaped grooves. The grooved terrain may be subdivided on the basis of pervasive morphology of groove domains into four terrain types: (1) elongate bands of parallel grooves (groove lanes); (2) polygonal domains of parallel grooves (grooved polygons); (3) polygonal domains of two orthogonal groove sets (reticulate terrain); and (4) polygons having two to several complexly cross-cutting groove sets (complex grooved terrain). Reticulate terrain is frequently dark and not extensively resurfaced, and grades to a more hummocky terrain type. The other three grooved terrain types have almost universally been resurfaced by light material during their emplacement. The sequence of events during grooved terrain emplacement has been investigated. An attempt is made to integrate observed geologic and tectonic patterns to better constrain the relative ages and styles of emplacement of grooved terrain types. A revised model of grooved terrain emplacement is proposed and is tested using detailed geologic mapping and measurement of crater density.
Surface-mount sapphire interferometric temperature sensor.
Zhu, Yizheng; Wang, Anbo
2006-08-20
A fiber-optic high-temperature sensor is demonstrated by bonding a 45 degrees -polished single-crystal sapphire fiber on the surface of a sapphire wafer, whose optical thickness is temperature dependent and measured by white-light interferometry. A novel adhesive-free coupling between the silica and sapphire fibers is achieved by fusion splicing, and its performance is characterized. The sensor's interference signal is investigated for its dependence on angular alignment between the fiber and the wafer. A prototype sensor is tested to 1,170 degrees C with a resolution of 0.4 degrees C, demonstrating excellent potential for high-temperature measurement.
NASA Astrophysics Data System (ADS)
Son, Ji-Su; Hyeon Baik, Kwang; Gon Seo, Yong; Song, Hooyoung; Hoon Kim, Ji; Hwang, Sung-Min; Kim, Tae-Geun
2011-07-01
The optimal conditions of p-type activation for nonpolar a-plane (1 1 -2 0) p-type GaN films on r-plane (1 -1 0 2) sapphire substrates with various off-axis orientations have been investigated. Secondary ion mass spectrometry (SIMS) measurements show that Mg doping concentrations of 6.58×10 19 cm -3 were maintained in GaN during epitaxial growth. The samples were activated at various temperatures and periods of time in air, oxygen (O 2) and nitrogen (N 2) gas ambient by conventional furnace annealing (CFA) and rapid thermal annealing (RTA). The activation of nonpolar a-plane p-type GaN was successful in similar annealing times and temperatures when compared with polar c-plane p-type GaN. However, activation ambient of nonpolar a-plane p-type GaN was clearly different, where a-plane p-type GaN was effectively activated in air ambient. Photoluminescence shows that the optical properties of Mg-doped a-plane GaN samples are enhanced when activated in air ambient.
Structure of a Pheromone Receptor-Associated Mhc Molecule With An Open And Empty Groove
DOE Office of Scientific and Technical Information (OSTI.GOV)
Olson, R.; Huey-Tubman, K.E.; Dulac, C.
2006-10-06
Neurons in the murine vomeronasal organ (VNO) express a family of class Ib major histocompatibility complex (MHC) proteins (M10s) that interact with the V2R class of VNO receptors. This interaction may play a direct role in the detection of pheromonal cues that initiate reproductive and territorial behaviors. The crystal structure of M10.5, an M10 family member, is similar to that of classical MHC molecules. However, the M10.5 counterpart of the MHC peptide-binding groove is open and unoccupied, revealing the first structure of an empty class I MHC molecule. Similar to empty MHC molecules, but unlike peptide-filled MHC proteins and non-peptide-bindingmore » MHC homologs, M10.5 is thermally unstable, suggesting that its groove is normally occupied. However, M10.5 does not bind endogenous peptides when expressed in mammalian cells or when offered a mixture of class I-binding peptides. The F pocket side of the M10.5 groove is open, suggesting that ligands larger than 8-10-mer class I-binding peptides could fit by extending out of the groove. Moreover, variable residues point up from the groove helices, rather than toward the groove as in classical MHC structures. These data suggest that M10s are unlikely to provide specific recognition of class I MHC-binding peptides, but are consistent with binding to other ligands, including proteins such as the V2Rs.« less
Mode-converting coupler for silicon-on-sapphire devices
NASA Astrophysics Data System (ADS)
Zlatanovic, S.; Offord, B. W.; Owen, M.; Shimabukuro, R.; Jacobs, E. W.
2015-02-01
Silicon-on-sapphire devices are attractive for the mid-infrared optical applications up to 5 microns due to the low loss of both silicon and sapphire in this wavelength band. Designing efficient couplers for silicon-on-sapphire devices presents a challenge due to a highly confined mode in silicon and large values of refractive index of both silicon and sapphire. Here, we present design, fabrication, and measurements of a mode-converting coupler for silicon-on-sapphire waveguides. We utilize a mode converter layout that consists of a large waveguide that is overlays a silicon inverse tapered waveguide. While this geometry was previously utilized for silicon-on-oxide devices, the novelty is in using materials that are compatible with the silicon-on-sapphire platform. In the current coupler the overlaying waveguide is made of silicon nitride. Silicon nitride is the material of choice because of the large index of refraction and low absorption from near-infrared to mid-infrared. The couplers were fabricated using a 0.25 micron silicon-on-sapphire process. The measured coupling loss from tapered lensed silica fibers to the silicon was 4.8dB/coupler. We will describe some challenges in fabrication process and discuss ways to overcome them.
Patterned substrates and methods for nerve regeneration
Mallapragada, Surya K.; Heath, Carole; Shanks, Howard; Miller, Cheryl A.; Jeftinija, Srdija
2004-01-13
Micropatterned substrates and methods for fabrication of artificial nerve regeneration conduits and methods for regenerating nerves are provided. Guidance compounds or cells are seeded in grooves formed on the patterned substrate. The substrates may also be provided with electrodes to provide electrical guidance cues to the regenerating nerve. The micropatterned substrates give physical, chemical, cellular and/or electrical guidance cues to promote nerve regeneration at the cellular level.
Method for imaging informational biological molecules on a semiconductor substrate
NASA Technical Reports Server (NTRS)
Coles, L. Stephen (Inventor)
1994-01-01
Imaging biological molecules such as DNA at rates several times faster than conventional imaging techniques is carried out using a patterned silicon wafer having nano-machined grooves which hold individual molecular strands and periodically spaced unique bar codes permitting repeatably locating all images. The strands are coaxed into the grooves preferably using gravity and pulsed electric fields which induce electric charge attraction to the molecular strands in the bottom surfaces of the grooves. Differential imaging removes substrate artifacts.
Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN
NASA Astrophysics Data System (ADS)
Osinski, Marek; Eliseev, Petr G.; Lee, Jinhyun; Smagley, Vladimir A.; Sugahara, Tamoya; Sakai, Shiro
1999-11-01
Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.
Effect of the substrate on the insulator-metal transition of vanadium dioxide films
NASA Astrophysics Data System (ADS)
Kovács, György J.; Bürger, Danilo; Skorupa, Ilona; Reuther, Helfried; Heller, René; Schmidt, Heidemarie
2011-03-01
Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO2 takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VOx (x > 2.6) phase coexisting with VO2 and the high vanadium vacancy concentration of the VO2. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.
Formation of Ganymede's Grooved Terrain by Convection-Driven Resurfacing
NASA Astrophysics Data System (ADS)
Hammond, N. P.; Barr, A. C.
2013-12-01
Over half the surface of Ganymede, Jupiter's largest icy moon, is covered in grooved terrain, which is composed of 10-100 km wide swaths of sub-parallel ridges and troughs [1]. Convection in Ganymede's ice shell was originally suggested as a driving mechanism for grooved terrain formation [2] but subsequent work has argued that convective stresses were too weak to deform the surface [3] and that Ganymede's ice shell was thin and conductive during groove terrain formation [4]. However, the heat flow [5] and strain rate [6] inferred for grooved terrain formation resemble the conditions observed at the active Enceladus South Polar Terrain (SPT), where 'sluggish lid' convection may be occurring [7]. During 'sluggish lid' convection, thermal buoyancy stresses exceed the lithospheric yield stress, allowing convection to reach the surface and drive deformation [8]. Previous work shows that the heat flows and strain rates associated with sluggish lid convection are consistent with the observed heat flow and surface age of the Enceladus SPT [7, 9]. Here we use numerical models of convection in Ganymede's ice shell to show that convection can provide the heat flow and strain rate inferred for grooved terrain formation. We use the finite element model CITCOM [10] to model convection for a wide range of ice shell conditions. We use a newtonian temperature-dependent viscosity consistent with deformation by volume diffusion [11]. We impose a limited viscosity contrast between the surface and base of the ice shell to mimic the effect of an upper surface whose yield stress is less than the critical stress for sluggish lid convection [7, 12] due to impact fracturing [13], tidal flexing, and/or shallow tidal heating. We find that ice shells 10 to 80 km thick are consistent with the heat flow and strain rate inferred for grooved terrain formation. Regions above convective upwellings are consistent with conditions inferred at groove lanes. Regions above downwellings are consistent
NASA Astrophysics Data System (ADS)
Cheng, Zongzhe; Hanke, Michael; Vogt, Patrick; Bierwagen, Oliver; Trampert, Achim
2017-10-01
Heteroepitaxial Ga2O3 was deposited on c-plane and a-plane oriented sapphire by plasma-assisted molecular beam epitaxy and probed by ex-situ and in-situ synchrotron-based x-ray diffraction. The investigation on c-plane sapphire determined a critical thickness of around 33 Å, at which the monoclinic β-phase forms on top of the hexagonal α-phase. A 143 Å thick single phase α-Ga2O3 was observed on a-plane sapphire, much thicker than the α-Ga2O3 on c-plane sapphire. The α-Ga2O3 relaxed very fast in the first 30 Å in both out-of-plane and in-plane directions as measured by the in-situ study.
Edge coating apparatus with movable roller applicator for solar cell substrates
Pavani, Luca; Abas, Emmanuel
2012-12-04
A non-contact edge coating apparatus includes an applicator for applying a coating material on an edge of a solar cell substrate and a control system configured to drive the applicator. The control system may drive the applicator along an axis to maintain a distance with an edge of the substrate as the substrate is rotated to have the edge coated with a coating material. The applicator may include a recessed portion into which the edge of the substrate is received for edge coating. For example, the applicator may be a roller with a groove. Coating material may be introduced into the groove for application onto the edge of the substrate. A variety of coating materials may be employed with the apparatus including hot melt ink and UV curable plating resist.
Structural tuning of residual conductivity in highly mismatched III-V layers
Han, Jung; Figiel, Jeffrey J.
2002-01-01
A new process to control the electrical conductivity of gallium nitride layers grown on a sapphire substrate has been developed. This process is based on initially coating the sapphire substrate with a thin layer of aluminum nitride, then depositing the gallium nitride thereon. This process allows one to controllably produce gallium nitride layers with resistivity varying over as much as 10 orders of magnitude, without requiring the introduction and activation of suitable dopants.
A morphometric assessment and classification of coral reef spur and groove morphology
NASA Astrophysics Data System (ADS)
Duce, S.; Vila-Concejo, A.; Hamylton, S. M.; Webster, J. M.; Bruce, E.; Beaman, R. J.
2016-07-01
Spurs and grooves (SaGs) are a common and important feature of coral reef fore slopes worldwide. However, they are difficult to access and hence their morphodynamics and formation are poorly understood. We use remote sensing, with extensive ground truthing, to measure SaG morphometrics and environmental factors at 11,430 grooves across 17 reefs in the southern Great Barrier Reef, Australia. We revealed strong positive correlations between groove length, orientation and wave exposure with longer, more closely-spaced grooves oriented easterly reflecting the dominant swell regime. Wave exposure was found to be the most important factor controlling SaG distribution and morphology. Gradient of the upper reef slope was also an important limiting factor, with SaGs less likely to develop in steeply sloping (> 5°) areas. We used a subset of the morphometric data (11 reefs) to statistically define four classes of SaG. This classification scheme was tested on the remaining six reefs. SaGs in the four classes differ in morphology, groove substrate and coral cover. These differences provide insights into SaG formation mechanisms with implications to reef platform growth and evolution. We hypothesize SaG formation is dominated by coral growth processes at two classes and erosion processes at one class. A fourth class may represent relic features formed earlier in the Holocene transgression. The classes are comparable with SaGs elsewhere, suggesting the classification could be applied globally with the addition of new classes if necessary. While further research is required, we show remotely sensed SaG morphometrics can provide useful insights into reef platform evolution.
NASA Astrophysics Data System (ADS)
Hur, Min-Jae; Han, Xue-Feng; Choi, Ho-Gil; Yi, Kyung-Woo
2017-09-01
The quality of sapphire single crystals used as substrates for LED production is largely influenced by two defects: dislocation density and bubbles trapped in the crystal. In particular, the dislocation density has a higher value in sapphire grown by the Czochralski (CZ) method than by other methods. In the present study, we predict a decreased value for the convexity and thermal gradient at the crystal front (CF) through the use of an additional heater in an induction-heated CZ system. In addition, we develop a solute concentration model by which the location of bubble formation in CZ growth is calculated, and the results are compared with experimental results. We further calculate the location of bubble entrapment corresponding with the use of an additional heater. We find that sapphire crystal growth with an additional heater yields a decreased thermal gradient at the CF, together with decreased CF convexity, improved energy efficiency, and improvements in terms of bubble formation location.
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
Chen, Kevin; Kapadia, Rehan; Harker, Audrey; Desai, Sujay; Seuk Kang, Jeong; Chuang, Steven; Tosun, Mahmut; Sutter-Fella, Carolin M.; Tsang, Michael; Zeng, Yuping; Kiriya, Daisuke; Hazra, Jubin; Madhvapathy, Surabhi Rao; Hettick, Mark; Chen, Yu-Ze; Mastandrea, James; Amani, Matin; Cabrini, Stefano; Chueh, Yu-Lun; Ager III, Joel W.; Chrzan, Daryl C.; Javey, Ali
2016-01-01
The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V's on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V's of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. The patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. The work presents an important advance towards universal integration of III–V's on application-specific substrates by direct growth. PMID:26813257
Sapphire Fabry-Perot high-temperature sensor study
NASA Astrophysics Data System (ADS)
Yao, Yi-qiang; Liang, Wei-long; Gui, Xinwang; Fan, Dian
2017-04-01
A new structure sapphire fiber Fabry-Perot (F-P) high-temperature sensor based on sapphire wafer was proposed and fabricated. The sensor uses the sapphire fiber as a transmission waveguide, the sapphire wafer as an Fabry-Perot (F-P) interferometer and the new structure of "Zirconia ferrule-Zirconia tube" as the sensor fixing structure of the sensor. The reflection spectrum of the interferometer was demodulated by a serial of data processing including FIR bandpass filter, FFT (Fast Fourier Transformation) estimation and LSE (least squares estimation) compensation to obtain more precise OPD. Temperature measurement range is from 20 to 1000°C in experiment. The experimental results show that the sensor has the advantages of small size, low cost, simple fabrication and high repeatability. It can be applied for longterm, stable and high-precision high temperature measurement in harsh environments.
Sapphire capillary interstitial irradiators for laser medicine
NASA Astrophysics Data System (ADS)
Shikunova, I. A.; Dolganova, I. N.; Dubyanskaya, E. N.; Mukhina, E. E.; Zaytsev, K. I.; Kurlov, V. N.
2018-04-01
In this paper, we demonstrate instruments for laser radiation delivery based on sapphire capillary needles. Such sapphire irradiators (introducers) can be used for various medical applications, such as photodynamic therapy, laser hyperthermia, laser interstitial thermal therapy, and ablation of tumors of various organs. Unique properties of sapphire allow for effective redistribution of the heat, generated in biological tissues during their exposure to laser radiation. This leads to homogeneous distribution of the laser irradiation around the needle, and lower possibility of formation of the overheating focuses, as well as the following non-transparent thrombi.
Dielectric image line groove antennas for millimeterwaves
NASA Astrophysics Data System (ADS)
Solbach, K.; Wolff, I.
Grooves in the ground plane of dielectric image lines are proposed as a new radiating structure. A figure is included showing the proposed groove structure as a discontinuity in a dielectric image line. A wave incident on the dielectric image line is partly reflected by the discontinuity, partly transmitted across the groove, and partly radiated into space above the line. In a travelling-wave antenna, a number of grooves are arranged below a dielectric guide, with spacings around one guide wavelength to produce a beam in the upper half space. A prescribed aperture distribution can be effected by tapering the series radiation resistance of the grooves. This can be done by adjusting the depths of the grooves with a constant width or by varying the widths of the grooves with a constant depth. Attention is also given to circular grooves. Here, the widths of the holes are chosen so that they can be considered as waveguides operating far below the cut-off frequency of the fundamental circular waveguide mode.
Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film
NASA Astrophysics Data System (ADS)
Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching
2017-10-01
Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.
The epitaxial growth of wurtzite ZnO films on LiNbO 3 (0 0 0 1) substrates
NASA Astrophysics Data System (ADS)
Yin, J.; Liu, Z. G.; Liu, H.; Wang, X. S.; Zhu, T.; Liu, J. M.
2000-12-01
ZnO epitaxial films were deposited on LiNbO 3 (0 0 0 1) substrates by pulsed laser deposition. The smaller lattice misfit (-8.5%) between ZnO along <1 0 1¯ 0>- direction and LiNbO 3 (0 0 0 1) along <1 1 2¯ 0>- direction, as compared with that in the case of normally used sapphire (0 0 0 1) substrates, favored the epitaxial growth of ZnO films. The transmittance spectra of ZnO films deposited in vacuum after annealed in pure oxygen show a sharp absorption edge at 375.6 nm (E g=3.31 eV) .
Temperature dependence of sapphire fiber Raman scattering
Liu, Bo; Yu, Zhihao; Tian, Zhipeng; ...
2015-04-27
Anti-Stokes Raman scattering in sapphire fiber has been observed for the first time. Temperature dependence of Raman peaks’ intensity, frequency shift, and linewidth were also measured. Three anti-Stokes Raman peaks were observed at temperatures higher than 300°C in a 0.72-m-long sapphire fiber excited by a second-harmonic Nd YAG laser. The intensity of anti-Stokes peaks are comparable to that of Stokes peaks when the temperature increases to 1033°C. We foresee the combination of sapphire fiber Stokes and anti-Stokes measurement in use as a mechanism for ultrahigh temperature sensing.
Size and shape dependence of CO adsorption sites on sapphire supported Fe microcrystals
NASA Technical Reports Server (NTRS)
Papageorgopoulos, C.; Heinemann, K.
1985-01-01
The surface structure and stoichiometry of alumina substrates, as well as the size, growth characteristics, and shape of Fe deposits on sapphire substrates have been investigated by low energy electron diffraction (LEED), Auger electron spectroscopy, electron energy loss spectroscopy, and X-ray photoemission spectroscopy (XPS), as well as work function measurements, in conjunction with transition electron microscopy observations. The substrates used in this work were the following: (1) new, clean Al2O3; (2) same surface amorphized by Ar ion bombardment; (3) same surface regenerated by 650 C annealing; (4) amorphous alumina films on Ta slab; and (5) polycrystal alumina films, obtained by heating amorphous films to 600 C. Substrate cleaning was found to be most effective in producing a reproducible surface upon oxygen RF plasma treatment. The Fe nucleation and growth process was found to depend strongly on the type of substrate surface and deposition conditions. Ar ion bombardment under beam flooding, and subsequent annealing at 650 C was found an effective means to restore the original Al2O3 (1102) surface for renewed Fe deposition.
Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure
NASA Technical Reports Server (NTRS)
Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)
2016-01-01
One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
Electron Beam Welder Used to Braze Sapphire to Platinum
NASA Technical Reports Server (NTRS)
Forsgren, Roger C.; Vannuyen, Thomas
1998-01-01
A new use for electron beam brazing was recently developed by NASA Lewis Research Center's Manufacturing Engineering Division. This work was done to fabricate a fiberoptic probe (developed by Sentec Corporation) that could measure high temperatures less than 600 deg C of vibrating machinery, such as in jet engine combustion research. Under normal circumstances, a sapphire fiber would be attached to platinum by a ceramic epoxy. However, no epoxies can adhere ceramic fibers to platinum under such high temperatures and vibration. Also, since sapphire and platinum have different thermal properties, the epoxy bond is subjected to creep over time. Therefore, a new method had to be developed that would permanently and reliably attach a sapphire fiber to platinum. Brazing a sapphire fiber to a platinum shell. The fiber-optic probe assembly consists of a 0.015-in.-diameter sapphire fiber attached to a 0.25-in.-long, 0.059-in.-diameter platinum shell. Because of the small size of this assembly, electron beam brazing was chosen instead of conventional vacuum brazing. The advantage of the electron beam is that it can generate a localized heat source in a vacuum. Gold reactive braze was used to join the sapphire fiber and the platinum. Consequently, the sapphire fiber was not affected by the total heat needed to braze the components together.
Influence of musical groove on postural sway.
Ross, Jessica M; Warlaumont, Anne S; Abney, Drew H; Rigoli, Lillian M; Balasubramaniam, Ramesh
2016-03-01
Timescales of postural fluctuation reflect underlying neuromuscular processes in balance control that are influenced by sensory information and the performance of concurrent cognitive and motor tasks. An open question is how postural fluctuations entrain to complex environmental rhythms, such as in music, which also vary on multiple timescales. Musical groove describes the property of music that encourages auditory-motor synchronization and is used to study voluntary motor entrainment to rhythmic sounds. The influence of groove on balance control mechanisms remains unexplored. We recorded fluctuations in center of pressure (CoP) of standing participants (N = 40) listening to low and high groove music and during quiet stance. We found an effect of musical groove on radial sway variability, with the least amount of variability in the high groove condition. In addition, we observed that groove influenced postural sway entrainment at various temporal scales. For example, with increasing levels of groove, we observed more entrainment to shorter, local timescale rhythmic musical occurrences. In contrast, we observed more entrainment to longer, global timescale features of the music, such as periodicity, with decreasing levels of groove. Finally, musical experience influenced the amount of postural variability and entrainment at local and global timescales. We conclude that groove in music and musical experience can influence the neural mechanisms that govern balance control, and discuss implications of our findings in terms of multiscale sensorimotor coupling. (PsycINFO Database Record (c) 2016 APA, all rights reserved).
Wang, Jy-An; Liu, Kenneth C.
2003-07-08
A method for determining fracture toughness K.sub.IC of materials ranging from metallic alloys, brittle ceramics and their composites, and weldments. A cylindrical specimen having a helical V-groove with a 45.degree. pitch is subjected to pure torsion. This loading configuration creates a uniform tensile-stress crack-opening mode, and a transverse plane-strain state along the helical groove. The full length of the spiral groove is equivalent to the thickness of a conventional compact-type specimen. K.sub.IC values are determined from the fracture torque and crack length measured from the test specimen using a 3-D finite element program (TOR3D-KIC) developed for the purpose. In addition, a mixed mode (combined tensile and shear stress mode) fracture toughness value can be determined by varying the pitch of the helical groove. Since the key information needed for determining the K.sub.IC value is condensed in the vicinity of the crack tip, the specimen can be significantly miniaturized without the loss of generality.
Studies of Niobium Thin Film Produced by Energetic Vacuum Deposition
DOE Office of Scientific and Technical Information (OSTI.GOV)
Genfa Wu; Anne-Marie Valente; H. Phillips
2004-05-01
An energetic vacuum deposition system has been used to study deposition energy effects on the properties of niobium thin films on copper and sapphire substrates. The absence of working gas avoids the gaseous inclusions commonly seen with sputtering deposition. A biased substrate holder controls the deposition energy. Transition temperature and residual resistivity ratio of the niobium thin films at several deposition energies are obtained together with surface morphology and crystal orientation measurements by AFM inspection, XRD and TEM analysis. The results show that niobium thin films on sapphire substrate exhibit the best cryogenic properties at deposition energy around 123 eV.more » The TEM analysis revealed that epitaxial growth of film was evident when deposition energy reaches 163 eV for sapphire substrate. Similarly, niobium thin film on copper substrate shows that film grows more oriented with higher deposition energy and grain size reaches the scale of the film thickness at the deposition energy around 153 eV.« less
First branchial groove anomaly.
Kumar, M; Hickey, S; Joseph, G
2000-06-01
First branchial groove anomalies are very rare. We report a case of a first branchial groove anomaly presented as an infected cyst in an 11-month-old child. Management of such lesions is complicated because of their close association with the facial nerve. Surgical management must include identification and protection of the facial nerve. Embryology and facial nerve disposition in relation to the anomaly are reviewed.
High free carrier concentration in p-GaN grown on AlN substrates
NASA Astrophysics Data System (ADS)
Sarkar, Biplab; Mita, Seiji; Reddy, Pramod; Klump, Andrew; Kaess, Felix; Tweedie, James; Bryan, Isaac; Bryan, Zachary; Kirste, Ronny; Kohn, Erhard; Collazo, Ramon; Sitar, Zlatko
2017-07-01
A high free hole concentration in III-nitrides is important for next generation optoelectronic and high power electronic devices. The free hole concentration exceeding 1018 cm-3 and resistivity as low as 0.7 Ω cm are reported for p-GaN layers grown by metalorganic vapor phase epitaxy on single crystal AlN substrates. Temperature dependent Hall measurements confirmed a much lower activation energy, 60-80 mV, for p-GaN grown on AlN as compared to sapphire substrates; the lowering of the activation energy was due to screening of Coulomb potential by free carriers. It is also shown that a higher doping density (more than 5 × 1019 cm-3) can be achieved in p-GaN/AlN without the onset of self-compensation.
Thermochromic VO2 Films Deposited by RF Magnetron Sputtering Using V2O3 or V2O5 Targets
NASA Astrophysics Data System (ADS)
Shigesato, Yuzo; Enomoto, Mikiko; Odaka, Hidehumi
2000-10-01
Thermochromic monoclinic-tetragonal VO2 films were successfully deposited on glass substrates with high reproducibility by rf magnetron sputtering using V2O3 or V2O5 targets. In the case of reactive sputtering using a V-metal target, the VO2 films could be obtained only under the very narrow deposition conditions of the “transition region” where the deposition rate decreases drastically with increasing oxygen gas flow rate. In the case of a V2O3 target, polycrystalline VO2 films with a thickness of 400 to 500 nm were obtained by the introduction of oxygen gas [O2/(Ar+O2)=1--1.5%], whereas hydrogen gas [H2/(Ar+H2)=2.5--10%] was introduced in the case of a V2O5 target. Furthermore, the VO2 films were successfully grown heteroepitaxially on a single-crystal sapphire [α-Al2O3(001)] substrate, where the epitaxial relationship was confirmed to be VO2(010)[100]\\parallelAl2O3(001)[100], [010], [\\bar{1}\\bar{1}0] by an X-ray diffraction pole figure measurement. The resistivity ratio between semiconductor and metal phases for the heteroepitaxial VO2 films was much larger than the ratio of the polycrystalline films on glass substrates under the same deposition conditions.
NASA Astrophysics Data System (ADS)
Bag, Ankush; Mukhopadhyay, Partha; Ghosh, Saptarsi; Das, Palash; Chakraborty, Apurba; Dinara, Syed M.; Kabi, Sanjib; Biswas, Dhurbes
2015-05-01
We have experimentally studied trapping and self-heating effect in terms of current slump in AlGaN/GaN HEMT grown and identically processed on Silicon (111) and Sapphire (0001) substrates. Different responses have been observed through DC characterization of different duty cycle (100%, 50%, 5% and 0.5%) of pulses at drain end. Effect of self-heating is more in case of HEMT on Sapphire due to its comparative poor thermal conductivity whereas trapped charges have strong contribution in current drop of HEMT on Si (111) due to larger lattice as well as thermal expansion coefficient mismatched epitaxy between GaN and Si (111). These results have been compared among substrates that lead us to find out optimal source of current slump quantitatively between traps and self-heating.
Zhu, Zhendong; Bai, Benfeng; Duan, Huigao; Zhang, Haosu; Zhang, Mingqian; You, Oubo; Li, Qunqing; Tan, Qiaofeng; Wang, Jia; Fan, Shoushan; Jin, Guofan
2014-04-24
Plasmonic nanostructures separated by nanogaps enable strong electromagnetic-field confinement on the nanoscale for enhancing light-matter interactions, which are in great demand in many applications such as surface-enhanced Raman scattering (SERS). A simple M-shaped nanograting with narrow V-shaped grooves is proposed. Both theoretical and experimental studies reveal that the electromagnetic field on the surface of the M grating can be pronouncedly enhanced over that of a grating without such grooves, due to field localization in the nanogaps formed by the narrow V grooves. A technique based on room-temperature nanoimprinting lithography and anisotropic reactive-ion etching is developed to fabricate this device, which is cost-effective, reliable, and suitable for fabricating large-area nanostructures. As a demonstration of the potential application of this device, the M grating is used as a SERS substrate for probing Rhodamine 6G molecules. Experimentally, an average SERS enhancement factor as high as 5×10⁸ has been achieved, which verifies the greatly enhanced light-matter interaction on the surface of the M grating over that of traditional SERS surfaces. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.
NASA Astrophysics Data System (ADS)
Chen, X.; Qin, G.; Ai, Z.; Ji, Y.
2017-08-01
As an effective and economic method for flow range enhancement, circumferential groove casing treatment (CGCT) is widely used to increase the stall margin of compressors. Different from traditional grooved casing treatments, in which the grooves are always located over the rotor in both axial and radial compressors, one or several circumferential grooves are located along the shroud side of the diffuser passage in this paper. Numerical investigations were conducted to predict the performance of a low flow rate centrifugal compressor with CGCT in diffuser. Computational fluid dynamics (CFD) analysis is performed under stage environment in order to find the optimum location of the circumferential casing groove in consideration of stall margin enhancement and efficiency gain at design point, and the impact of groove number to the effect of this grooved casing treatment configuration in enhancing the stall margin of the compressor stage is studied. The results indicate that the centrifugal compressor with circumferential groove in vaned diffuser can obtain obvious improvement in the stall margin with sacrificing design efficiency a little. Efforts were made to study blade level flow mechanisms to determine how the CGCT impacts the compressor’s stall margin (SM) and performance. The flow structures in the passage, the tip gap, and the grooves as well as their mutual interactions were plotted and analysed.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sahoo, Trilochan; Ju, Jin-Woo; Kannan, V.
2008-03-04
Single crystalline ZnO thin film on p-GaN/sapphire (0 0 0 1) substrate, using two different precursors by hydrothermal route at a temperature of 90 deg. C were successfully grown. The effect of starting precursor on crystalline nature, surface morphology and optical emission of the films were studied. ZnO thin films were grown in aqueous solution of zinc acetate and zinc nitrate. X-ray diffraction analysis revealed that all the thin films were single crystalline in nature and exhibited wurtzite symmetry and c-axis orientation. The thin films obtained with zinc nitrate had a more pitted rough surface morphology compared to the filmmore » grown in zinc acetate. However the thickness of the films remained unaffected by the nature of the starting precursor. Sharp luminescence peaks were observed from the thin films almost at identical energies but deep level emission was slightly prominent for the thin film grown in zinc nitrate.« less
Bridges, N.T.; Herkenhoff, K. E.
2002-01-01
The topographic and geologic characteristics of grooves and groove-like features in the south polar layered deposits near the Mars Polar Lander/Deep Space 2 landing sites are evaluated using Mariner 9 images and their derived photoclinometry, normalized using Mars Orbiter Laser Altimeter data. Although both Mariner 9 and Viking images of the south polar layered deposits were available at the time of this study, Mariner 9 images of the grooves were selected because they were generally of higher resolution than Viking images. The dimensions and slopes of the grooves, together with orientations that nearly match the strongest winds predicted in the Martian Global Circulation Model and directions inferred from other wind indicators, suggest that they formed by aeolian scour of an easily erodible surface. Most grooves are symmetric and V-shaped in transverse profile, inconsistent with an origin involving extensional brittle deformation. Although the grooves strike along slopes and terraces of the south polar layered deposits, the variable depths and lack of terracing within the grooves themselves indicate that any stratigraphy in the uppermost 100 m of the polar layered deposits is composed of layers of similar, and relatively low, resistance. The grooves do not represent landing hazards at the scale of the Mariner 9 images (72-86 m/pixel) and therefore probably would not have affected Mars Polar Lander and Deep Space 2, had they successfully reached the surface. ?? 2002 Elsevier Science (USA).
Oleophobic properties of the step-and-terrace sapphire surface
NASA Astrophysics Data System (ADS)
Muslimov, A. E.; Butashin, A. V.; Kanevsky, V. M.
2017-03-01
Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical-mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of the surface. The results are analyzed using the Ventsel-Deryagin homogeneous wetting model.
Oleophobic properties of the step-and-terrace sapphire surface
DOE Office of Scientific and Technical Information (OSTI.GOV)
Muslimov, A. E., E-mail: amuslimov@mail.ru; Butashin, A. V.; Kanevsky, V. M.
Sapphire is widely used in production of optical windows for various devices due to its mechanical and optical properties. However, during operation the surface can be affected by fats, oils, and other organic contaminations. Therefore, it is important to improve the oleophobic properties of sapphire windows. In this study, we investigate the interaction of a supersmooth sapphire surface with oleic acid droplets, which imitate human finger printing. It is established that chemical–mechanical polishing with additional annealing in air, which leads to the formation of an atomically smooth sapphire surface, makes it possible to significantly improve the oleophobic properties of themore » surface. The results are analyzed using the Ventsel–Deryagin homogeneous wetting model.« less
Discovery of Grooves on Gaspra
Veverka, J.; Thomas, P.; Simonelli, D.; Belton, M.J.S.; Carr, M.; Chapman, C.; Davies, M.E.; Greeley, R.; Greenberg, R.; Head, J.; Klaasen, K.; Johnson, T.V.; Morrison, D.; Neukum, G.
1994-01-01
We report the discovery of grooves in Galileo high-resolution images of Gaspra. These features, previously seen only on Mars' satellite Phobos, are most likely related to severe impacts. Grooves on Gaspra occur as linear and pitted depressions, typically 100-200 m wide, 0.8 to 2.5 km long, and 10-20 m deep. Most occur in two major groups, one of which trends approximately parallel to the asteroid's long axis, but is offset by some 15??; the other is approximately perpendicular to this trend. The first of these directions falls along a family of planes which parallel three extensive flat facets identified by Thomas et al., Icarus 107. The occurrence of grooves on Gaspra is consistent with other indications (irregular shape, cratering record) that this asteroid has evolved through a violent collisional history. The bodywide congruence of major groove directions and other structural elements suggests that present-day Gaspra is a globally coherent body. ?? 1994 Academic Press. All rights reserved.
Ridge InGaAs/InP multi-quantum-well selective growth in nanoscale trenches on Si (001) substrate
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, S.; Zhou, X.; Li, M.
Metal organic chemical vapor deposition of InGaAs/InP multi-quantum-well in nanoscale V-grooved trenches on Si (001) substrate was studied using the aspect ratio trapping method. A high quality GaAs/InP buffer layer with two convex (111) B facets was selectively grown to promote the highly uniform, single-crystal ridge InP/InGaAs multi-quantum-well structure growth. Material quality was confirmed by transmission electron microscopy and room temperature micro-photoluminescence measurements. This approach shows great promise for the fabrication of photonics devices and nanolasers on Si substrate.
Scalable cell alignment on optical media substrates.
Anene-Nzelu, Chukwuemeka G; Choudhury, Deepak; Li, Huipeng; Fraiszudeen, Azmall; Peh, Kah-Yim; Toh, Yi-Chin; Ng, Sum Huan; Leo, Hwa Liang; Yu, Hanry
2013-07-01
Cell alignment by underlying topographical cues has been shown to affect important biological processes such as differentiation and functional maturation in vitro. However, the routine use of cell culture substrates with micro- or nano-topographies, such as grooves, is currently hampered by the high cost and specialized facilities required to produce these substrates. Here we present cost-effective commercially available optical media as substrates for aligning cells in culture. These optical media, including CD-R, DVD-R and optical grating, allow different cell types to attach and grow well on them. The physical dimension of the grooves in these optical media allowed cells to be aligned in confluent cell culture with maximal cell-cell interaction and these cell alignment affect the morphology and differentiation of cardiac (H9C2), skeletal muscle (C2C12) and neuronal (PC12) cell lines. The optical media is amenable to various chemical modifications with fibronectin, laminin and gelatin for culturing different cell types. These low-cost commercially available optical media can serve as scalable substrates for research or drug safety screening applications in industry scales. Copyright © 2013 Elsevier Ltd. All rights reserved.
Terrain types and local-scale stratigraphy of grooved terrain on ganymede
NASA Technical Reports Server (NTRS)
Murchie, Scott L.; Head, James W.; Helfenstein, Paul; Plescia, Jeffrey B.
1986-01-01
Grooved terrain is subdivided on the basis of pervasive morphology into: (1) groove lanes - elongate parallel groove bands, (2) grooved polygons - polygonal domains of parallel grooves, (3) reticulate terrain - polygonal domains of orthogonal grooves, and (4) complex grooved terrain - polygons with several complexly cross-cutting groove sets. Detailed geologic mapping of select areas, employing previously established conventions for determining relative age relations, reveals a general three-stage sequence of grooved terrain emplacement: first, dissection of the lithosphere by throughgoing grooves, and pervasive deformation of intervening blocks; second, extensive flooding and continued deformation of the intervening blocks; third, repeated superposition of groove lanes concentrated at sites of initial throughgoing grooves. This sequence is corroborated by crater-density measurements. Dominant orientations of groove sets are parallel to relict zones of weakness that probably were reactivated during grooved terrain formation. Groove lane morphology and development consistent with that predicted for passive rifts suggests a major role of global expansion in grooved terrain formation.
Nanostructuring of sapphire using time-modulated nanosecond laser pulses
NASA Astrophysics Data System (ADS)
Lorenz, P.; Zagoranskiy, I.; Ehrhardt, M.; Bayer, L.; Zimmer, K.
2017-02-01
The nanostructuring of dielectric surfaces using laser radiation is still a challenge. The IPSM-LIFE (laser-induced front side etching using in-situ pre-structured metal layer) method allows the easy, large area and fast laser nanostructuring of dielectrics. At IPSM-LIFE a metal covered dielectric is irradiated where the structuring is assisted by a self-organized molten metal layer deformation process. The IPSM-LIFE can be divided into two steps: STEP 1: The irradiation of thin metal layers on dielectric surfaces results in a melting and nanostructuring process of the metal layer and partially of the dielectric surface. STEP 2: A subsequent high laser fluence treatment of the metal nanostructures result in a structuring of the dielectric surface. At this study a sapphire substrate Al2O3(1-102) was covered with a 10 nm thin molybdenum layer and irradiated by an infrared laser with an adjustable time-dependent pulse form with a time resolution of 1 ns (wavelength λ = 1064 nm, pulse duration Δtp = 1 - 600 ns, Gaussian beam profile). The laser treatment allows the fabrication of different surface structures into the sapphire surface due to a pattern transfer process. The resultant structures were investigated by scanning electron microscopy (SEM). The process was simulated and the simulation results were compared with experimental results.
Surface study of irradiated sapphires from Phrae Province, Thailand using AFM
NASA Astrophysics Data System (ADS)
Monarumit, N.; Jivanantaka, P.; Mogmued, J.; Lhuaamporn, T.; Satitkune, S.
2017-09-01
The irradiation is one of the gemstone enhancements for improving the gem quality. Typically, there are many varieties of irradiated gemstones in the gem market such as diamond, topaz, and sapphire. However, it is hard to identify the gemstones before and after irradiation. The aim of this study is to analyze the surface morphology for classifying the pristine and irradiated sapphires using atomic force microscope (AFM). In this study, the sapphire samples were collected from Phrae Province, Thailand. The samples were irradiated by high energy electron beam for a dose of ionizing radiation at 40,000 kGy. As the results, the surface morphology of pristine sapphires shows regular atomic arrangement, whereas, the surface morphology of irradiated sapphires shows the nano-channel observed by the 2D and 3D AFM images. The atomic step height and root mean square roughness have changed after irradiation due to the micro-structural defect on the sapphire surface. Therefore, this study is a frontier application for sapphire identification before and after irradiation.
Stress generated modifications of epitaxial ferroelectric SrTiO3 films on sapphire
NASA Astrophysics Data System (ADS)
Hollmann, E.; Schubert, J.; Kutzner, R.; Wördenweber, R.
2009-06-01
The effect of lattice-mismatch induced stress upon the crystallographic structure, strain, strain relaxation, and the generation of different types of defects in heteroepitaxially grown SrTiO3 films on CeO2 buffered sapphire is examined. Depending on the thickness of the SrTiO3 layer, characteristic changes in the structural perfection of the layers, their crystallographic orientation with respect to the substrate system, and their strain is observed. For thin films misfit dislocations partially compensate the stress in the SrTiO3 layer, whereas cracks develop in thicker SrTiO3 films. The cracks are orientated along two predominant crystallographic orientations of the sapphire. The structural modifications and the formation of misfit defects and cracks are explained in a model based on lattice misfit induced stress, on the one hand, and energy considerations taking into account the stress release due to crack formation and the energy necessary for the formation of new surfaces at the crack, on the other hand. The impact of lattice misfit is discussed in two steps, i.e., intrinsic and thermal induced misfits during heteroepitaxial film growth at a given temperature and the subsequent cooling of the sample, respectively. The comparison of the theoretical predictions and the experimental observations demonstrate that intrinsic mismatch and thermal mismatch have to be considered in order to explain strain dependent effects in complex heteroepitaxial layer systems such as induced ferroelectricity of SrTiO3 on sapphire.
Buffer layers for high-Tc thin films on sapphire
NASA Technical Reports Server (NTRS)
Wu, X. D.; Foltyn, S. R.; Muenchausen, R. E.; Cooke, D. W.; Pique, A.; Kalokitis, D.; Pendrick, V.; Belohoubek, E.
1992-01-01
Buffer layers of various oxides including CeO2 and yttrium-stabilized zirconia (YSZ) have been deposited on R-plane sapphire. The orientation and crystallinity of the layers were optimized to promote epitaxial growth of YBa2Cu3O(7-delta) (YBCO) thin films. An ion beam channeling minimum yield of about 3 percent was obtained in the CeO2 layer on sapphire, indicating excellent crystallinity of the buffer layer. Among the buffer materials used, CeO2 was found to be the best one for YBCO thin films on R-plane sapphire. High Tc and Jc were obtained in YBCO thin films on sapphire with buffer layers. Surface resistances of the YBCO films were about 4 mOmega at 77 K and 25 GHz.
Sapphire: Canada's Answer to Space-Based Surveillance of Orbital Objects
NASA Astrophysics Data System (ADS)
Maskell, P.; Oram, L.
The Canadian Department of National Defence is in the process of developing the Canadian Space Surveillance System (CSSS) as the main focus of the Surveillance of Space (SofS) Project. The CSSS consists of two major elements: the Sapphire System and the Sensor System Operations Centre (SSOC). The space segment of the Sapphire System is comprised of the Sapphire Satellite - an autonomous spacecraft with an electro-optical payload which will act as a contributing sensor to the United States (US) Space Surveillance Network (SSN). It will operate in a circular, sunsynchronous orbit at an altitude of approximately 750 kilometers and image a minimum of 360 space objects daily in orbits ranging from 6,000 to 40,000 kilometers in altitude. The ground segment of the Sapphire System is composed of a Spacecraft Control Center (SCC), a Satellite Processing and Scheduling Facility (SPSF), and the Sapphire Simulator. The SPSF will be responsible for data transmission, reception, and processing while the SCC will serve to control and monitor the Sapphire Satellite. Surveillance data will be received from Sapphire through two ground stations. Following processing by the SPSF, the surveillance data will then be forwarded to the SSOC. The SSOC will function as the interface between the Sapphire System and the US Joint Space Operations Center (JSpOC). The JSpOC coordinates input from various sensors around the world, all of which are a part of the SSN. The SSOC will task the Sapphire System daily and provide surveillance data to the JSpOC for correlation with data from other SSN sensors. This will include orbital parameters required to predict future positions of objects to be tracked. The SSOC receives daily tasking instructions from the JSpOC to determine which objects the Sapphire spacecraft is required to observe. The advantage of this space-based sensor over ground-based telescopes is that weather and time of day are not factors affecting observation. Thus, space-based optical
High Precision 2-D Grating Groove Density Measurement
NASA Astrophysics Data System (ADS)
Zhang, Ningxiao; McEntaffer, Randall; Tedesco, Ross
2017-08-01
Our research group at Penn State University is working on producing X-ray reflection gratings with high spectral resolving power and high diffraction efficiency. To estimate our fabrication accuracy, we apply a precise 2-D grating groove density measurement to plot groove density distributions of gratings on 6-inch wafers. In addition to plotting a fixed groove density distribution, this method is also sensitive to measuring the variation of the groove density simultaneously. This system can reach a measuring accuracy (ΔN/N) of 10-3. Here we present this groove density measurement and some applications.
NASA Astrophysics Data System (ADS)
Yoshikawa, Akira; Nagatomi, Takaharu; Morishita, Tomohiro; Iwaya, Motoaki; Takeuchi, Tetsuya; Kamiyama, Satoshi; Akasaki, Isamu
2017-10-01
We developed a method for fabricating high-crystal-quality AlN films by combining a randomly distributed nanosized concavo-convex sapphire substrate (NCC-SS) and a three-step growth method optimized for NCC-SS, i.e., a 3-nm-thick nucleation layer (870 °C), a 150-nm-thick high-temperature layer (1250 °C), and a 3.2-μm-thick medium-temperature layer (1110 °C). The NCC-SS is easily fabricated using a conventional metalorganic vapor phase epitaxy reactor equipped with a showerhead plate. The resultant AlN film has a crack-free and single-step surface with a root-mean-square roughness of 0.5 nm. The full-widths at half-maxima of the X-ray rocking curve were 50/250 arcsec for the (0002)/(10-12) planes, revealing that the NCC surface is critical for achieving such a high-quality film. Hexagonal-pyramid-shaped voids at the AlN/NCC-SS interface and confinement of dislocations within the 150-nm-thick high-temperature layer were confirmed. The NCC surface feature and resultant faceted voids play an important role in the growth of high-crystal-quality AlN films, likely via localized and/or disordered growth of AlN at the initial stage, contributing to the alignment of high-crystal-quality nuclei and dislocations.
High power continuous-wave titanium:sapphire laser
Erbert, G.V.; Bass, I.L.; Hackel, R.P.; Jenkins, S.L.; Kanz, V.K.; Paisner, J.A.
1993-09-21
A high-power continuous-wave laser resonator is provided, wherein first, second, third, fourth, fifth and sixth mirrors form a double-Z optical cavity. A first Ti:sapphire rod is disposed between the second and third mirrors and at the mid-point of the length of the optical cavity, and a second Ti:sapphire rod is disposed between the fourth and fifth mirrors at a quarter-length point in the optical cavity. Each Ti:sapphire rod is pumped by two counter-propagating pump beams from a pair of argon-ion lasers. For narrow band operation, a 3-plate birefringent filter and an etalon are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors are disposed between the first and second mirrors to form a triple-Z optical cavity. A third Ti:sapphire rod is disposed between the seventh and eighth mirrors at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers. 5 figures.
Crystal Structure and Ferroelectric Properties of ε-Ga2O3 Films Grown on (0001)-Sapphire.
Mezzadri, Francesco; Calestani, Gianluca; Boschi, Francesco; Delmonte, Davide; Bosi, Matteo; Fornari, Roberto
2016-11-21
The crystal structure and ferroelectric properties of ε-Ga 2 O 3 deposited by low-temperature MOCVD on (0001)-sapphire were investigated by single-crystal X-ray diffraction and the dynamic hysteresis measurement technique. A thorough investigation of this relatively unknown polymorph of Ga 2 O 3 showed that it is composed of layers of both octahedrally and tetrahedrally coordinated Ga 3+ sites, which appear to be occupied with a 66% probability. The refinement of the crystal structure in the noncentrosymmetric space group P6 3 mc pointed out the presence of uncompensated electrical dipoles suggesting ferroelectric properties, which were finally demonstrated by independent measurements of the ferroelectric hysteresis. A clear epitaxial relation is observed with respect to the c-oriented sapphire substrate, with the Ga 2 O 3 [10-10] direction being parallel to the Al 2 O 3 direction [11-20], yielding a lattice mismatch of about 4.1%.
Sapphire shaped crystals for laser-assisted cryodestruction of biological tissues
NASA Astrophysics Data System (ADS)
Shikunova, I. A.; Dubyanskaya, E. N.; Kuznetsov, A. A.; Katyba, G. M.; Dolganova, I. N.; Mukhina, E. E.; Chernomyrdin, N. V.; Zaytsev, K. I.; Tuchin, V. V.; Kurlov, V. N.
2018-04-01
We have developed cryo-applicators based on the sapphire shaped crystals fabricated using the edge-defined film-fed growth (EFG) and noncapillary shaping (NCS) techniques. Due to the unique physical properties of sapphire: i.e. high thermal, mechanical, and chemical strength, impressive thermal conductivity and optical transparency, these cryo-applicators yield combination of the tissue cryo-destruction with its exposure to laser radiation for controlling the thermal regimes of cryosurgery, and with the optical diagnosis of tissue freezing. We have applied the proposed sapphire cryo-applicators for the destruction of tissues in vitro. The observed results highlight the prospectives of the sapphire cryo-applicators in cryosurgery.
NASA Astrophysics Data System (ADS)
Wei, Tongbo; Duan, Ruifei; Wang, Junxi; Li, Jinmin; Huo, Ziqiang; Yang, Jiankun; Zeng, Yiping
2008-05-01
Thick nonpolar (1010) GaN layers were grown on m-plane sapphire substrates by hydride vapor phase epitaxy (HVPE) using magnetron sputtered ZnO buffers, while semipolar (1013) GaN layers were obtained by the conventional two-step growth method using the same substrate. The in-plane anisotropic structural characteristics and stress distribution of the epilayers were revealed by high resolution X-ray diffraction and polarized Raman scattering measurements. Atomic force microscopy (AFM) images revealed that the striated surface morphologies correlated with the basal plane stacking faults for both (1010) and (1013) GaN films. The m-plane GaN surface showed many triangular-shaped pits aligning uniformly with the tips pointing to the c-axis after etching in boiled KOH, whereas the oblique hillocks appeared on the semipolar epilayers. In addition, the dominant emission at 3.42 eV in m-plane GaN films displayed a red shift with respect to that in semipolar epilayers, maybe owing to the different strain states present in the two epitaxial layers.
Jang, A-Rang; Hong, Seokmo; Hyun, Chohee; Yoon, Seong In; Kim, Gwangwoo; Jeong, Hu Young; Shin, Tae Joo; Park, Sung O; Wong, Kester; Kwak, Sang Kyu; Park, Noejung; Yu, Kwangnam; Choi, Eunjip; Mishchenko, Artem; Withers, Freddie; Novoselov, Kostya S; Lim, Hyunseob; Shin, Hyeon Suk
2016-05-11
Large-scale growth of high-quality hexagonal boron nitride has been a challenge in two-dimensional-material-based electronics. Herein, we present wafer-scale and wrinkle-free epitaxial growth of multilayer hexagonal boron nitride on a sapphire substrate by using high-temperature and low-pressure chemical vapor deposition. Microscopic and spectroscopic investigations and theoretical calculations reveal that synthesized hexagonal boron nitride has a single rotational orientation with AA' stacking order. A facile method for transferring hexagonal boron nitride onto other target substrates was developed, which provides the opportunity for using hexagonal boron nitride as a substrate in practical electronic circuits. A graphene field effect transistor fabricated on our hexagonal boron nitride sheets shows clear quantum oscillation and highly improved carrier mobility because the ultraflatness of the hexagonal boron nitride surface can reduce the substrate-induced degradation of the carrier mobility of two-dimensional materials.
NASA Astrophysics Data System (ADS)
Nakasu, Taizo; Sun, W.; Kobayashi, M.; Asahi, T.
2017-06-01
Zinc telluride layers were grown on highly-lattice-mismatched sapphire substrates by molecular beam epitaxy, and their crystallographic properties were studied by means of X-ray diffraction pole figures. The crystal quality of the ZnTe thin film was further studied by scanning electron microscopy, X-ray rocking curves and low-temperature photoluminescence measurements. These methods show that high-crystallinity (111)-oriented single domain ZnTe layers with the flat surface and good optical properties are realized when the beam intensity ratio of Zn and Te beams is adjusted. The migration of Zn and Te was inhibited by excess surface material and cracks were appeared. In particular, excess Te inhibited the formation of a high-crystallinity ZnTe film. The optical properties of the ZnTe layer revealed that the exciton-related features were dominant, and therefore the film quality was reasonably high even though the lattice constants and the crystal structures were severely mismatched.
Submicron diameter single crystal sapphire optical fiber
Hill, Cary; Homa, Daniel; Liu, Bo; ...
2014-10-02
In this work, a submicron-diameter single crystal sapphire optical fiber was demonstrated via wet acid etching at elevated temperatures. Etch rates on the order 2.3 µm/hr were achievable with a 3:1 molar ratio sulfuric-phosphoric acid solution maintained at a temperature of 343°C. A sapphire fiber with an approximate diameter of 800 nm was successfully fabricated from a commercially available fiber with an original diameter of 50 µm. The simple and controllable etching technique provides a feasible approach to the fabrication of unique waveguide structures via traditional silica masking techniques. The ability to tailor the geometry of sapphire optical fibers ismore » the first step in achieving optical and sensing performance on par with its fused silica counterpart.« less
Droplet impact on regular micro-grooved surfaces
NASA Astrophysics Data System (ADS)
Hu, Hai-Bao; Huang, Su-He; Chen, Li-Bin
2013-08-01
We have investigated experimentally the process of a droplet impact on a regular micro-grooved surface. The target surfaces are patterned such that micro-scale spokes radiate from the center, concentric circles, and parallel lines on the polishing copper plate, using Quasi-LIGA molding technology. The dynamic behavior of water droplets impacting on these structured surfaces is examined using a high-speed camera, including the drop impact processes, the maximum spreading diameters, and the lengths and numbers of fingers at different values of Weber number. Experimental results validate that the spreading processes are arrested on all target surfaces at low velocity. Also, the experimental results at higher impact velocity demonstrate that the spreading process is conducted on the surface parallel to the micro-grooves, but is arrested in the direction perpendicular to the micro-grooves. Besides, the lengths of fingers increase observably, even when they are ejected out as tiny droplets along the groove direction, at the same time the drop recoil velocity is reduced by micro-grooves which are parallel to the spreading direction, but not by micro-grooves which are vertical to the spreading direction.
Mapping Vesta Equatorial Quadrangle V-8EDL: Various Craters and Giant Grooves
NASA Astrophysics Data System (ADS)
Le Corre, L.; Nathues, A.; Reddy, V.; Buczkowski, D.; Denevi, B. W.; Gaffey, M.; Williams, D. A.; Garry, W. B.; Yingst, R.; Jaumann, R.; Pieters, C. M.; Russell, C. T.; Raymond, C. A.
2011-12-01
NASA's Dawn spacecraft arrived at the asteroid 4Vesta on July 15, 2011, and is now collecting imaging, spectroscopic, and elemental abundance data during its one-year orbital mission. As part of the geological analysis of the surface, a series of 15 quadrangle maps are being produced based on Framing Camera images (FC: spatial resolution: ~65 m/pixel) along with Visible & Infrared Spectrometer data (VIR: spatial resolution: ~180 m/pixel) obtained during the High-Altitude Mapping Orbit (HAMO). This poster presentation concentrates on our geologic analysis and mapping of quadrangle V-8EDL located between -22 and 22 degrees latitude and 144 and 216 degrees East longitude. This quadrangle is dominated by old craters (without any ejecta visible in the clear and color bands), but one small recent crater can be seen with bright ejecta blanket and rays. The latter has some small, dark units outside and inside the crater rim that could be indicative of impact melt. This quadrangle also contains a set of giant linear grooves running almost parallel to the equator that might have formed subsequent to a big impact. We will use FC mosaics with clear images and false color composites as well as VIR spectroscopy data in order to constrain the geology and identify the nature of each unit present in this quadrangle.
Enhanced vbasis laser diode package
Deri, Robert J.; Chen, Diana; Bayramian, Andy; Freitas, Barry; Kotovsky, Jack
2014-08-19
A substrate having an upper surface and a lower surface is provided. The substrate includes a plurality of v-grooves formed in the upper surface. Each v-groove includes a first side and a second side perpendicular to the first side. A laser diode bar assembly is disposed within each of the v-grooves and attached to the first side. The laser diode bar assembly includes a first adhesion layer disposed on the first side of the v-groove, a metal plate attached to the first adhesion layer, a second adhesion layer disposed over the metal plate, and a laser diode bar attached to the second adhesion layer. The laser diode bar has a coefficient of thermal expansion (CTE) substantially similar to that of the metal plate.
NASA Astrophysics Data System (ADS)
de Pablos-Martín, A.; Lorenz, M.; Grundmann, M.; Höche, Th.
2017-07-01
Laser welding of dissimilar materials is challenging, due to their difference in coefficients of thermal expansion (CTE). In this work, fused silica-to-sapphire joints were achieved by employment of a ns laser focused in the intermediate Si-enriched fresnoitic glass thin film sealant. The microstructure of the bonded interphase was analyzed down to the nanometer scale and related to the laser parameters used. The crystallization of fresnoite in the glass sealant upon laser process leads to an intense blue emission intensity under UV excitation. This crystallization is favored in the interphase with the silica glass substrate, rather than in the border with the sapphire. The formation of SiO2 particles was confirmed, as well. The bond quality was evaluated by scanning acoustic microscopy (SAM). The substrates remain bonded even after heat treatment at 100 °C for 30 min, despite the large CTE difference between both substrates.
Nanostructured sapphire optical fiber for sensing in harsh environments
NASA Astrophysics Data System (ADS)
Chen, Hui; Liu, Kai; Ma, Yiwei; Tian, Fei; Du, Henry
2017-05-01
We describe an innovative and scalable strategy of transforming a commercial unclad sapphire optical fiber to an allalumina nanostructured sapphire optical fiber (NSOF) that overcomes decades-long challenges faced in the field of sapphire fiber optics. The strategy entails fiber coating with metal Al followed by subsequent anodization to form anodized alumina oxide (AAO) cladding of highly organized pore channel structure. We show that Ag nanoparticles entrapped in AAO show excellent structural and morphological stability and less susceptibility to oxidation for potential high-temperature surface-enhanced Raman Scattering (SERS). We reveal, with aid of numerical simulations, that the AAO cladding greatly increases the evanescent-field overlap both in power and extent and that lower porosity of AAO results in higher evanescent-field overlap. This work has opened the door to new sapphire fiber-based sensor design and sensor architecture.
Double-grooved nanofibre surfaces with enhanced anisotropic hydrophobicity.
Liang, Meimei; Chen, Xin; Xu, Yang; Zhu, Lei; Jin, Xiangyu; Huang, Chen
2017-11-02
This study reports a facile method for fabricating double-grooved fibrous surfaces. The primary grooves of the surface are formed by aligned fibres, while the secondary grooves are achieved by oriented nanogrooves on the fibre surface. Investigation into the formation mechanism reveals that the nanogrooves can be readily tailored through adjusting the solvent ratio and relative humidity. With this understanding, a variety of polymers have been successfully electrospun into fibres having the same nanogrooved feature. These fibres show high resemblance to natural hierarchical structures, and thereby endowing the corresponding double-grooved surface with enhanced anisotropic hydrophobicity. A water droplet at a parallel direction to the grooves exhibits a much higher contact angle and a lower roll-off angle than the droplet at a perpendicular direction. The application potential of such anisotropic hydrophobicity has been demonstrated via a fog collection experiment, in which the double-grooved surface can harvest the largest amount of water. Moreover, the fabrication method requires neither post-treatment nor sophisticated equipment, making us anticipate that the double-grooved surface would be competitive in areas where a highly ordered surface, a large surface area and an anisotropic hydrophobicity are preferred.
The sapphire backscattering monochromator at the Dynamics beamline P01 of PETRA III
Alexeev, P.; Asadchikov, V.; Bessas, D.; ...
2016-02-23
Here, we report on a high resolution sapphire backscattering monochromator installed at the Dynamics beamline P01 of PETRA III. The device enables nuclear resonance scattering experiments on M ossbauer isotopes with transition energies between 20 and 60 keV with sub-meV to meV resolution. In a first performance test with 119Sn nuclear resonance at a X-ray energy of 23.88 keV an energy resolution of 1.34 meV was achieved. Moreover, the device extends the field of nuclear resonance scattering at the PETRA III synchrotron light source to many further isotopes like 151Eu, 149Sm, 161Dy, 125Te and 121Sb.
High power continuous-wave titanium:sapphire laser
Erbert, Gaylen V.; Bass, Isaac L.; Hackel, Richard P.; Jenkins, Sherman L.; Kanz, Vernon K.; Paisner, Jeffrey A.
1993-01-01
A high-power continuous-wave laser resonator (10) is provided, wherein first, second, third, fourth, fifth and sixth mirrors (11-16) form a double-Z optical cavity. A first Ti:Sapphire rod (17) is disposed between the second and third mirrors (12,13) and at the mid-point of the length of the optical cavity, and a second Ti:Sapphire rod (18) is disposed between the fourth and fifth mirrors (14,15) at a quarter-length point in the optical cavity. Each Ti:Sapphire rod (17,18) is pumped by two counter-propagating pump beams from a pair of argon-ion lasers (21-22, 23-24). For narrow band operation, a 3-plate birefringent filter (36) and an etalon (37) are disposed in the optical cavity so that the spectral output of the laser consists of 5 adjacent cavity modes. For increased power, seventy and eighth mirrors (101, 192) are disposed between the first and second mirrors (11, 12) to form a triple-Z optical cavity. A third Ti:Sapphire rod (103) is disposed between the seventh and eighth mirrors (101, 102) at the other quarter-length point in the optical cavity, and is pumped by two counter-propagating pump beams from a third pair of argon-ion lasers (104, 105).
Single-Crystal Sapphire Optical Fiber Sensor Instrumentation
DOE Office of Scientific and Technical Information (OSTI.GOV)
Pickrell, Gary; Scott, Brian; Wang, Anbo
2013-12-31
This report summarizes technical progress on the program “Single-Crystal Sapphire Optical Fiber Sensor Instrumentation,” funded by the National Energy Technology Laboratory of the U.S. Department of Energy, and performed by the Center for Photonics Technology of the Bradley Department of Electrical and Computer Engineering at Virginia Tech. This project was completed in three phases, each with a separate focus. Phase I of the program, from October 1999 to April 2002, was devoted to development of sensing schema for use in high temperature, harsh environments. Different sensing designs were proposed and tested in the laboratory. Phase II of the program, frommore » April 2002 to April 2009, focused on bringing the sensor technologies, which had already been successfully demonstrated in the laboratory, to a level where the sensors could be deployed in harsh industrial environments and eventually become commercially viable through a series of field tests. Also, a new sensing scheme was developed and tested with numerous advantages over all previous ones in Phase II. Phase III of the program, September 2009 to December 2013, focused on development of the new sensing scheme for field testing in conjunction with materials engineering of the improved sensor packaging lifetimes. In Phase I, three different sensing principles were studied: sapphire air-gap extrinsic Fabry-Perot sensors; intensity-based polarimetric sensors; and broadband polarimetric sensors. Black body radiation tests and corrosion tests were also performed in this phase. The outcome of the first phase of this program was the selection of broadband polarimetric differential interferometry (BPDI) for further prototype instrumentation development. This approach is based on the measurement of the optical path difference (OPD) between two orthogonally polarized light beams in a single-crystal sapphire disk. At the beginning of Phase II, in June 2004, the BPDI sensor was tested at the Wabash River coal
Transmission characteristics of a subwavelength metallic slit with perpendicular groove
NASA Astrophysics Data System (ADS)
Jin, Li; Zhou, Jun; Zou, Weibo; Zhang, Haopeng; Zhang, Lingfen
2011-12-01
The transmission property of a subwavelength metallic slit with perpendicular groove is investigated by using finite element method. The lengths for the slits at both sides of the groove are set as the length of a metallic slit without groove at the surface plasmon fundamental mode resonance. In the grooved subwavelength metallic slit, enhanced transmission is found to be attributed to two kinds of resonance including surface plasmon waveguide resonance along the propagating direction and the transversely constructive interferential resonance. For the former resonance, integer antinodes of surface plasmon are formed in the groove. For the later resonance, there is a tradeoff between the maximum amplitude and the full width at half maximum of the transmitted peaks with the change of the groove width. And, the transmission enhancement of the grooved subwavelength metallic slit is related to the number of groove and the incident wavelength. Furthermore, the above resonances also exist in the structure whose lengths of metallic slits are set as the length of a slit without groove at the surface plasmon high-order mode resonance. By optimizing the geometric parameters, the transmission enhancement of the grooved subwavelength metallic slit as high as about 15367% is achieved.
Shear strength of metal-sapphire contacts
NASA Technical Reports Server (NTRS)
Pepper, S. V.
1976-01-01
The shear strength of polycrystalline Ag, Cu, Ni, and Fe contacts on clean (0001) sapphire has been studied in ultrahigh vacuum. Both clean metal surfaces and surfaces exposed to O2, Cl2, and C2H4 were used. The results indicate that there are two sources of strength of Al2O3-metal contacts: an intrinsic one that depends on the particular clean metal in contact with Al2O3 and an additional one due to intermediate films. The shear strength of the clean metal contacts correlated directly with the free energy of oxide formation for the lowest metal oxide, in accord with the hypothesis that a chemical bond is formed between metal cations and oxygen anions in the sapphire surface. Contacts formed by metals exposed to chlorine exhibited uniformly low shear strength indicative of van der Waals bonding between chlorinated metal surfaces and sapphire. Contacts formed by metals exposed to oxygen exhibited enhanced shear strength, in accord with the hypothesis that an intermediate oxide layer increases interfacial strength.
Kafka, K R P; Austin, D R; Li, H; Yi, A Y; Cheng, J; Chowdhury, E A
2015-07-27
Time-resolved diffraction microscopy technique has been used to observe the formation of laser-induced periodic surface structures (LIPSS) from the interaction of a single femtosecond laser pulse (pump) with a nano-scale groove mechanically formed on a single-crystal Cu substrate. The interaction dynamics (0-1200 ps) was captured by diffracting a time-delayed, frequency-doubled pulse (probe) from nascent LIPSS formation induced by the pump with an infinity-conjugate microscopy setup. The LIPSS ripples are observed to form asynchronously, with the first one forming after 50 ps and others forming sequentially outward from the groove edge at larger time delays. A 1-D analytical model of electron heating including both the laser pulse and surface plasmon polariton excitation at the groove edge predicts ripple period, melt spot diameter, and qualitatively explains the asynchronous time-evolution of LIPSS formation.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun
Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less
Ren, Fan; Pearton, Stephen J.; Ahn, Shihyun; ...
2016-09-21
Here, AlGaN/GaN high electron mobility transistors (HEMTs) have been grown on sapphire substrates, using ZrTi buffer layers to provide in-plane lattice-matching to hexagonal GaN. X-ray diffraction (XRD) as well as cross-section transmission electron microscopy (TEM) were used to assess the quality of the HEMT structure. The XRD 2θ scans showed full-width-at-half-maximum values of 0.16°, 0.07°, and 0.08° for ZrTi alloy, GaN buffer layer, and the entire HEMT structure, respectively. TEM studies of the GaN buffer layer and the AlN/ZrTi/AlN stack showed the importance of growing thin AlN buffer layers on the ZrTi layer prior to growth of the GaN buffermore » layer. The density of threading dislocations in the GaN channel layer of the HEMT structure was estimated to be in the 10 8 cm –2 range. The HEMT device exhibited a saturation drain current density of 820 mA/mm, and the channel of the fabricated HEMTs could be well modulated. A cutoff frequency (f T) of 8.9 GHz and a maximum frequency of oscillation (f max) of 17.3 GHz were achieved for HEMTs with gate dimensions of 1 × 200 μm.« less
Channel Temperature Determination for AlGaN/GaN HEMTs on SiC and Sapphire
NASA Technical Reports Server (NTRS)
Freeman, Jon C.; Mueller, Wolfgang
2008-01-01
Numerical simulation results (with emphasis on channel temperature) for a single gate AlGaN/GaN High Electron Mobility Transistor (HEMT) with either a sapphire or SiC substrate are presented. The static I-V characteristics, with concomitant channel temperatures (T(sub ch)) are calculated using the software package ATLAS, from Silvaco, Inc. An in-depth study of analytical (and previous numerical) methods for the determination of T(sub ch) in both single and multiple gate devices is also included. We develop a method for calculating T(sub ch) for the single gate device with the temperature dependence of the thermal conductivity of all material layers included. We also present a new method for determining the temperature on each gate in a multi-gate array. These models are compared with experimental results, and show good agreement. We demonstrate that one may obtain the channel temperature within an accuracy of +/-10 C in some cases. Comparisons between different approaches are given to show the limits, sensitivities, and needed approximations, for reasonable agreement with measurements.
Progress on 10 Kelvin cryo-cooled sapphire oscillator
NASA Technical Reports Server (NTRS)
Wang, Rabi T.; Dick, G. John; Diener, William A.
2004-01-01
We present recent progress on the 10 Kelvin Cryocooled Sapphire Oscillator (10K CSO). Included are incorporation of a new pulse tube cryocooler, cryocooler vibration comparisons between G-M and pulse-tube types, phase noise, and frequency stability tests. For the advantage of a single stage pulse tube cryocooler, we also present results for a 40K Compensated Sapphire Oscillator (40K CSO).
Microlens frames for laser diode arrays
Skidmore, J.A.; Freitas, B.L.
1999-07-13
Monolithic microlens frames enable the fabrication of monolithic laser diode arrays and are manufactured inexpensively with high registration, and with inherent focal length compensation for any lens diameter variation. A monolithic substrate is used to fabricate a low-cost microlens array. The substrate is wet-etched or sawed with a series of v-grooves. The v-grooves can be created by wet-etching, by exploiting the large etch-rate selectivity of different crystal planes. The v-grooves provide a support frame for either cylindrical or custom-shaped microlenses. Because the microlens frames are formed by photolithographic semiconductor batch-processing techniques, they can be formed inexpensively over large areas with precise lateral and vertical registration. The v-groove has an important advantage for preserving the correct focus for lenses of varying diameter. 12 figs.
Microlens frames for laser diode arrays
Skidmore, Jay A.; Freitas, Barry L.
1999-01-01
Monolithic microlens frames enable the fabrication of monolithic laser diode arrays and are manufactured inexpensively with high registration, and with inherent focal length compensation for any lens diameter variation. A monolithic substrate is used to fabricate a low-cost microlens array. The substrate is wet-etched or sawed with a series of v-grooves. The v-grooves can be created by wet-etching, by exploiting the large etch-rate selectivity of different crystal planes. The v-grooves provide a support frame for either cylindrical or custom-shaped microlenses. Because the microlens frames are formed by photolithographic semiconductor batch-processing techniques, they can be formed inexpensively over large areas with precise lateral and vertical registration. The v-groove has an important advantage for preserving the correct focus for lenses of varying diameter.
Epitaxy of boron phosphide on AlN, 4H-SiC, 3C-SiC and ZrB2 substrates
NASA Astrophysics Data System (ADS)
Padavala, Balabalaji
The semiconductor boron phosphide (BP) has many outstanding features making it attractive for developing various electronic devices, including neutron detectors. In order to improve the efficiency of these devices, BP must have high crystal quality along with the best possible electrical properties. This research is focused on growing high quality crystalline BP films on a variety of superior substrates like AlN, 4H-SiC, 3C-SiC and ZrB2 by chemical vapor deposition. In particular, the influence of various parameters such as temperature, reactant flow rates, and substrate type and its crystalline orientation on the properties of BP films were studied in detail. Twin-free BP films were produced by depositing on off-axis 4H-SiC(0001) substrate tilted 4° toward [11¯00] and crystal symmetry matched zincblende 3C-SiC. BP crystalline quality improved at higher deposition temperature (1200°C) when deposited on AlN, 4H-SiC, whereas increased strain in 3C-SiC and increased boron segregation in ZrB2 at higher temperatures limited the best deposition temperature to below 1200°C. In addition, higher flow ratios of PH 3 to B2H6 resulted in smoother films and improved quality of BP on all substrates. The FWHM of the Raman peak (6.1 cm -1), XRD BP(111) peak FWHM (0.18°) and peak ratios of BP(111)/(200) = 5157 and BP(111)/(220) = 7226 measured on AlN/sapphire were the best values reported in the literature for BP epitaxial films. The undoped films on AlN/sapphire were n-type with a highest electron mobility of 37.8 cm2/V˙s and a lowest carrier concentration of 3.15x1018 cm -3. Raman imaging had lower values of FWHM (4.8 cm-1 ) and a standard deviation (0.56 cm-1) for BP films on AlN/sapphire compared to 4H-SiC, 3C-SiC substrates. X-ray diffraction and Raman spectroscopy revealed residual tensile strain in BP on 4H-SiC, 3C-SiC, ZrB2/4H-SiC, bulk AlN substrates while compressive strain was evident on AlN/sapphire and bulk ZrB2 substrates. Among the substrates studied, AlN/sapphire
NASA Technical Reports Server (NTRS)
Ponchak, George E.; Jordan, Jennifer L.; Scardelletti, Maximilian; Stalker, Amy R.
2007-01-01
This paper presents the characteristics of coplanar waveguide transmission lines fabricated on R-plane sapphire substrates as a function of temperature across the temperature range of 25 to 400 C. Effective permittivity and attenuation are measured on a high temperature probe station. Two techniques are used to obtain the transmission line characteristics, a Thru-Reflect-Line calibration technique that yields the propagation coefficient and resonant stubs. To a first order fit of the data, the effective permittivity and the attenuation increase linearly with temperature.
Principle of topography-directed inkjet printing for functional micro-tracks in flexible substrates
NASA Astrophysics Data System (ADS)
Keum, Chang-Min; Lee, In-Ho; Park, Hea-Lim; Kim, Chiwoo; Lüssem, Björn; Choi, Jong Sun; Lee, Sin-Doo
2017-06-01
We present a general principle of topography-directed (TD) inkjet printing for functional micro-tracks embedded in a flexible elastomer substrate. The essential features of the TD inkjet printing in a micro-structured substrate with periodic grooves and ridges are described in terms of the topographic parameters for the transformation from a single droplet to a filament or an edge-disjoint pattern of ink in the groove. Silver ink, being widely used for producing conductive wires by conventional inkjet printing, is utilized as a testbed in our study. The underlying mechanisms for the spreading and drying processes of ink drops under the topographic compartment can be understood in a two-dimensional parameter space of the aspect ratio of the groove and the contact angle of ink on the substrate. The wetting morphologies of ink droplets are described in an analytical model where the Laplace pressure and the mean curvature at the vapor/ink interface are taken into account. The first principle of the TD inkjet printing would be applicable for constructing a variety of functional micro-tracks with high pattern fidelity from different classes of solutions such as conducting polymers, organic semiconductors, and colloidal nanoparticles.
Holographic fabrication of gratings in metal substrates
NASA Technical Reports Server (NTRS)
Fletcher, R. M.; Wagner, D. K.; Ballantyne, J. M.
1982-01-01
A program for investigating the grain enlargement resulting from the laser recrystallization of a thin gallium arsenide film on a patterned substrate, a technique known as graphoepitaxy was evaluated. More specifically, the effects of recrystallizing an uncapped gallium arsenide film using a continuous wave neodymium YAG laser operating at 1.06 microns were studied. In an effort to minimize arsenic loss from the film, the specimens were held in an arsine atmosphere during recrystallization. Two methods for fabricating patterned substrates were developed, one using reactive ion etching of a molybdenum film on both sapphire and silicon substates and another by preferential wet etching of a silicon substrate onto which a film of molybdenum was subsequently deposited.
Axially grooved heat pipe study
NASA Technical Reports Server (NTRS)
1977-01-01
A technology evaluation study on axially grooved heat pipes is presented. The state-of-the-art is reviewed and present and future requirements are identified. Analytical models, the Groove Analysis Program (GAP) and a closed form solution, were developed to facilitate parametric performance evaluations. GAP provides a numerical solution of the differential equations which govern the hydrodynamic flow. The model accounts for liquid recession, liquid/vapor shear interaction, puddle flow as well as laminar and turbulent vapor flow conditions. The closed form solution was developed to reduce computation time and complexity in parametric evaluations. It is applicable to laminar and ideal charge conditions, liquid/vapor shear interaction, and an empirical liquid flow factor which accounts for groove geometry and liquid recession effects. The validity of the closed form solution is verified by comparison with GAP predictions and measured data.
Modal reduction in single crystal sapphire optical fiber
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cheng, Yujie; Hill, Cary; Liu, Bo
2015-10-12
A new type of single crystal sapphire optical fiber (SCSF) design is proposed to reduce the number of guided modes via a highly dispersive cladding with a periodic array of high and low index regions in the azimuthal direction. The structure retains a “core” region of pure single crystal (SC) sapphire in the center of the fiber and a “cladding” region of alternating layers of air and SC sapphire in the azimuthal direction that is uniform in the radial direction. The modal characteristics and confinement losses of the fundamental mode were analyzed via the finite element method by varying themore » effective core diameter and the dimensions of the “windmill” shaped cladding. The simulation results showed that the number of guided modes were significantly reduced in the “windmill” fiber design, as the radial dimension of the air and SC sapphire cladding regions increase with corresponding decrease in the azimuthal dimension. It is anticipated that the “windmill” SCSF will readily improve the performance of current fiber optic sensors in the harsh environment and potentially enable those that were limited by the extremely large modal volume of unclad SCSF.« less
Micrometer for Measuring Trepanned Grooves
NASA Technical Reports Server (NTRS)
Bird, S. K.
1983-01-01
Special micrometer measures diameter of circular groove on face of large part, while part is mounted in lathe chuck. Tool has curved frame so it can reach around obstruction on centerline of part. At one end of frame is blade/ micrometer spindle for reaching into groove to be measured; this type of spindle does not rotate when micrometer thimble is turned in taking measurement. Other end of frame has sliding foot with blade.
Substrate topography: A valuable in vitro tool, but a clinical red herring for in vivo tenogenesis.
English, Andrew; Azeem, Ayesha; Spanoudes, Kyriakos; Jones, Eleanor; Tripathi, Bhawana; Basu, Nandita; McNamara, Karrina; Tofail, Syed A M; Rooney, Niall; Riley, Graham; O'Riordan, Alan; Cross, Graham; Hutmacher, Dietmar; Biggs, Manus; Pandit, Abhay; Zeugolis, Dimitrios I
2015-11-01
Controlling the cell-substrate interactions at the bio-interface is becoming an inherent element in the design of implantable devices. Modulation of cellular adhesion in vitro, through topographical cues, is a well-documented process that offers control over subsequent cellular functions. However, it is still unclear whether surface topography can be translated into a clinically functional response in vivo at the tissue/device interface. Herein, we demonstrated that anisotropic substrates with a groove depth of ∼317nm and ∼1988nm promoted human tenocyte alignment parallel to the underlying topography in vitro. However, the rigid poly(lactic-co-glycolic acid) substrates used in this study upregulated the expression of chondrogenic and osteogenic genes, indicating possible tenocyte trans-differentiation. Of significant importance is that none of the topographies assessed (∼37nm, ∼317nm and ∼1988nm groove depth) induced extracellular matrix orientation parallel to the substrate orientation in a rat patellar tendon model. These data indicate that two-dimensional imprinting technologies are useful tools for in vitro cell phenotype maintenance, rather than for organised neotissue formation in vivo, should multifactorial approaches that consider both surface topography and substrate rigidity be established. Herein, we ventured to assess the influence of parallel groves, ranging from nano- to micro-level, on tenocytes response in vitro and on host response using a tendon and a subcutaneous model. In vitro analysis indicates that anisotropically ordered micro-scale grooves, as opposed to nano-scale grooves, maintain physiological cell morphology. The rather rigid PLGA substrates appeared to induce trans-differentiation towards chondrogenic and/or steogenic lineage, as evidence by TILDA gene analysis. In vivo data in both tendon and subcutaneous models indicate that none of the substrates induced bidirectional host cell and tissue growth. Collective, these
Analysis and modification of blue sapphires from Rwanda by ion beam techniques
NASA Astrophysics Data System (ADS)
Bootkul, D.; Chaiwai, C.; Tippawan, U.; Wanthanachaisaeng, B.; Intarasiri, S.
2015-12-01
Blue sapphire is categorised in a corundum (Al2O3) group. The gems of this group are always amazed by their beauties and thus having high value. In this study, blue sapphires from Rwanda, recently came to Thai gemstone industry, are chosen for investigations. On one hand, we have applied Particle Induced X-ray Emission (PIXE), which is a highly sensitive and precise analytical technique that can be used to identify and quantify trace elements, for chemical analysis of the sapphires. Here we have found that the major element of blue sapphires from Rwanda is Al with trace elements such as Fe, Ti, Cr, Ga and Mg as are commonly found in normal blue sapphire. On the other hand, we have applied low and medium ion implantations for color improvement of the sapphire. It seems that a high amount of energy transferring during cascade collisions have altered the gems properties. We have clearly seen that the blue color of the sapphires have been intensified after nitrogen ion bombardment. In addition, the gems were also having more transparent and luster. The UV-Vis-NIR measurement detected the modification of their absorption properties, implying of the blue color increasing. Here the mechanism of these modifications is postulated and reported. In any point of view, the bombardment by using nitrogen ion beam is a promising technique for quality improvement of the blue sapphire from Rwanda.
Spectroscopic properties for identifying sapphire samples from Ban Bo Kaew, Phrae Province, Thailand
NASA Astrophysics Data System (ADS)
Mogmued, J.; Monarumit, N.; Won-in, K.; Satitkune, S.
2017-09-01
Gemstone commercial is a high revenue for Thailand especially ruby and sapphire. Moreover, Phrae is a potential gem field located in the northern part of Thailand. The studies of spectroscopic properties are mainly to identify gemstone using advanced techniques (e.g. UV-Vis-NIR spectrophotometry, FTIR spectrometry and Raman spectroscopy). Typically, UV-Vis-NIR spectrophotometry is a technique to study the cause of color in gemstones. FTIR spectrometry is a technique to study the functional groups in gem-materials. Raman pattern can be applied to identify the mineral inclusions in gemstones. In this study, the natural sapphires from Ban Bo Kaew were divided into two groups based on colors including blue and green. The samples were analyzed by UV-Vis-NIR spectrophotometer, FTIR spectrometer and Raman spectroscope for studying spectroscopic properties. According to UV-Vis-NIR spectra, the blue sapphires show higher Fe3+/Ti4+ and Fe2+/Fe3+ absorption peaks than those of green sapphires. Otherwise, green sapphires display higher Fe3+/Fe3+ absorption peaks than blue sapphires. The FTIR spectra of both blue and green sapphire samples show the absorption peaks of -OH,-CH and CO2. The mineral inclusions such as ferrocolumbite and rutile in sapphires from this area were observed by Raman spectroscope. The spectroscopic properties of sapphire samples from Ban Bo Kaew, Phrae Province, Thailand are applied to be the specific evidence for gemstone identification.
Spectral analysis of groove spacing on Ganymede
NASA Technical Reports Server (NTRS)
Grimm, R. E.
1984-01-01
The technique used to analyze groove spacing on Ganymede is presented. Data from Voyager images are used determine the surface topography and position of the grooves. Power spectal estimates are statistically analyzed and sample data is included.
Disk in a groove with friction: An analysis of static equilibrium and indeterminacy
NASA Astrophysics Data System (ADS)
Donolato, Cesare
2018-05-01
This note studies the statics of a rigid disk placed in a V-shaped groove with frictional walls and subjected to gravity and a torque. The two-dimensional equilibrium problem is formulated in terms of the angles that contact forces form with the normal to the walls. This approach leads to a single trigonometric equation in two variables whose domain is determined by Coulomb's law of friction. The properties of solutions (existence, uniqueness, or indeterminacy) as functions of groove angle, friction coefficient and applied torque are derived by a simple geometric representation. The results modify some of the conclusions by other authors on the same problem.
Synthesis of Diamond Nanoplatelets/Carbon Nanowalls on Graphite Substrate by MPCVD
NASA Astrophysics Data System (ADS)
Zhang, Wei; Lyu, Jilei; Lin, Xiaoqi; Zhu, Jinfeng; Man, Weidong; Jiang, Nan
2015-07-01
The films composed of carbon nanowalls and diamond nanoplatelets, respectively, can be simultaneously formed on graphite substrate by controlling the hydrogen etching rate during microwave plasma chemical vapor deposition. To modulate the etching rate, two kinds of substrate design were used: a bare graphite plate and a graphite groove covered with a single crystal diamond sheet. After deposition at 1200°C for 3 hours, we find that dense diamond nanoplatelets were grown on the bare graphite, whereas carbon nanowalls were formed on the grooved surface, indicating that not only reaction temperature but also etching behavior is a key factor for nanostructure formation. supported by the Public Welfare Technology Application Projects of Zhejiang Province, China (No. 2013C33G3220012)
Development of a sapphire fiber thermometer using two wavelength bands
NASA Astrophysics Data System (ADS)
Ye, Linhua; Shen, Yonghang
1996-09-01
This paper reports the development of a sapphire ((alpha) - Al2O3) single crystal optical fiber thermometer using two wavelength bands. A thin film of precious metal or ceramic deposited onto one end of the sapphire fiber forms a mini-radiation cavity. The other end of the sapphire fiber is coupled to a low-loss silica fiber. Radiation from the small cavity is transmitted along the silica fiber into a photodetection system which consists of a lens, beam splitter, two interference filters (820 nm and 940 nm center wavelength, 30 nm bandwidth) and two silicon photocells. The temperature measurement is based on the detection of radiation from the small cavity. The sapphire fiber (0.25 - 1.0 mm diameter, 100 - 450 mm length) was grown by the laser heated pedestal growth (LHPG) methods. Transmission loss in the sapphire fiber was experimentally measured. Theoretical analysis shows the apparent emittance of the small cavity with a length to diameter (L/D) ratio greater than eight is a constant value near to one, so the small cavity can be considered as a small black-body cavity. Using the developed sapphire fiber temperature sensor, we have built a sapphire fiber thermometer based on a 8098 single-chip microcomputer system. It was calibrated at some known stable temperature point and uses the fundamental radiation law to extrapolate to other temperatures. By taking the ratio of the optical power at two wavelengths, errors due to changes in the system, such as emissivity and transmission losses, can be canceled out. The thermometer has an operating temperature range of 800 to 1900 degrees Celsius, and an accuracy of 0.2% at 1000 degrees Celsius. There are a number of applications of the thermometer both in science and industry.
Reliability improvement methods for sapphire fiber temperature sensors
NASA Astrophysics Data System (ADS)
Schietinger, C.; Adams, B.
1991-08-01
Mechanical, optical, electrical, and software design improvements can be brought to bear in the enhancement of fiber-optic sapphire-fiber temperature measurement tool reliability in harsh environments. The optical fiber thermometry (OFT) equipment discussed is used in numerous process industries and generally involves a sapphire sensor, an optical transmission cable, and a microprocessor-based signal analyzer. OFT technology incorporating sensors for corrosive environments, hybrid sensors, and two-wavelength measurements, are discussed.
Picosecond temporal contrast of Ti:Sapphire lasers (Conference Presentation)
NASA Astrophysics Data System (ADS)
Kalashnikov, Mikhail P.; Khodakovskiy, Nikita
2017-05-01
The temporal shape of recompressed Ti:sapphire CPA pulses typically contains relatively long pre- and post- pedestals appearing on a picosecond time scale. Despite playing a key role in laser-matter interactions, these artifacts - especially the shape of the leading front of the recompressed pulses - are poorly investigated and understood. The related publications consider picosecond pedestals appearing at both fronts of the main pulse to be related to scattering of the stretched pulse off diffraction gratings inside the stretcher or due to clipping of the pulse spectrum at dielectric coatings. In our experiments we analyzed different types of stretcher-compressor combinations used in Ti:Sapphire laser systems. These include a prism-based stretcher and a bulk compressor, transmission and reflection diffraction gratings - based combinations. We identified pedestals that are typical for the particular stretcher-compressor combination. Especially investigated are those which are coherent with the major recompressed pulse, since with self-phase modulation in power amplifiers they will grow nonlinearly and finally appear symmetric around the major pulse, generating the pre-pedestal from the post-pedestal. Thus, a previously unreported influence of the trailing pedestal has been identified. It is commonly known that recompressed pulses from Ti:sapphire chirped-pulse amplifier systems are accompanied by a slowly decaying ragged post-pedestal. The detailed investigation shows that it consists of numerous pulses with temporal separation in the picosecond range. These are coherent with the main pulse. Moreover, the temporal structure of the trailing pedestal is independent of the particular realization of the Ti:sapphire system and it is present in radiation of any Ti:Sapphire CPA system including Kerr- mode locked master oscillators. Our investigations show that the coherent ragged post-pedestal is the post-radiation of inverted Ti:sapphire medium resulting from phonon
Fabrication Of SNS Weak Links On SOS Substrates
NASA Technical Reports Server (NTRS)
Hunt, Brian D.
1995-01-01
High-quality superconductor/normal-conductor/superconductor (SNS) devices ("weak links") containing epitaxial films of YBa(2)Cu(3)O(7-x) and SrTiO(3) fabricated on silicon-on-sapphire (SOS) substrates with help of improved multilayer buffer system. Process for fabrication of edge-defined SNS weak links described in "Edge-Geometry SNS Devices Made of Y/Ba/Cu" (NPO-18552).
Kuroshima, Shinichiro; Nakano, Takayoshi; Ishimoto, Takuya; Sasaki, Muneteru; Inoue, Maaya; Yasutake, Munenori; Sawase, Takashi
2017-01-15
The aim was to investigate the effect of groove designs on bone quality under controlled-repetitive load conditions for optimizing dental implant design. Anodized Ti-6Al-4V alloy implants with -60° and +60° grooves around the neck were placed in the proximal tibial metaphysis of rabbits. The application of a repetitive mechanical load was initiated via the implants (50N, 3Hz, 1800 cycles, 2days/week) at 12weeks after surgery for 8weeks. Bone quality, defined as osteocyte density and degree of biological apatite (BAp) c-axis/collagen fibers, was then evaluated. Groove designs did not affect bone quality without mechanical loading; however, repetitive mechanical loading significantly increased bone-to-implant contact, bone mass, and bone mineral density (BMD). In +60° grooves, the BAp c-axis/collagen fibers preferentially aligned along the groove direction with mechanical loading. Moreover, osteocyte density was significantly higher both inside and in the adjacent region of the +60° grooves, but not -60° grooves. These results suggest that the +60° grooves successfully transmitted the load to the bone tissues surrounding implants through the grooves. An optimally oriented groove structure on the implant surface was shown to be a promising way for achieving bone tissue with appropriate bone quality. This is the first report to propose the optimal design of grooves on the necks of dental implants for improving bone quality parameters as well as BMD. The findings suggest that not only BMD, but also bone quality, could be a useful clinical parameter in implant dentistry. Although the paradigm of bone quality has shifted from density-based assessments to structural evaluations of bone, clarifying bone quality based on structural bone evaluations remains challenging in implant dentistry. In this study, we firstly demonstrated that the optimal design of dental implant necks improved bone quality defined as osteocytes and the preferential alignment degree of biological
Method of Fabricating Double Sided Si(Ge)/Sapphire/III-Nitride Hybrid Structure
NASA Technical Reports Server (NTRS)
Choi, Sang Hyouk (Inventor); Park, Yeonjoon (Inventor)
2017-01-01
One aspect of the present invention is a double sided hybrid crystal structure including a trigonal Sapphire wafer containing a (0001) C-plane and having front and rear sides. The Sapphire wafer is substantially transparent to light in the visible and infrared spectra, and also provides insulation with respect to electromagnetic radio frequency noise. A layer of crystalline Si material having a cubic diamond structure aligned with the cubic <111> direction on the (0001) C-plane and strained as rhombohedron to thereby enable continuous integration of a selected (SiGe) device onto the rear side of the Sapphire wafer. The double sided hybrid crystal structure further includes an integrated III-Nitride crystalline layer on the front side of the Sapphire wafer that enables continuous integration of a selected III-Nitride device on the front side of the Sapphire wafer.
Tanaka, Atsunori; Chen, Renjie; Jungjohann, Katherine L.; ...
2015-11-27
Advanced semiconductor devices often utilize structural and geometrical effects to tailor their characteristics and improve their performance. Our detailed understanding of such geometrical effects in the epitaxial selective area growth of GaN on sapphire substrates is reported here, and we utilize them to enhance light extraction from GaN light emitting diodes. Systematic size and spacing effects were performed side-by-side on a single 2” sapphire substrate to minimize experimental sampling errors for a set of 144 pattern arrays with circular mask opening windows in SiO 2. We show that the mask opening diameter leads to as much as 4 times increasemore » in the thickness of the grown layers for 20 μm spacings and that spacing effects can lead to as much as 3 times increase in thickness for a 350 μm dot diameter. We also observed that the facet evolution in comparison with extracted Ga adatom diffusion lengths directly influences the vertical and lateral overgrowth rates and can be controlled with pattern geometry. Lastly, such control over the facet development led to 2.5 times stronger electroluminescence characteristics from well-faceted GaN/InGaN multiple quantum well LEDs compared to non-faceted structures.« less
NASA Astrophysics Data System (ADS)
Arndt, Roger; Chamorro, Leonardo; Sotiropoulos, Fotis
2010-11-01
Skin friction drag reduction through the use of riblets has been a topic of intensive research during the last decades. Main efforts have been placed on both numerical (mainly DNS) and experimental approaches. In spite of the valuable efforts, the fundamental mechanisms that induce drag reduction are not well established. In this study, wind tunnel experiments were performed to quantify the drag reduction in a wind turbine airfoil using different V-groove riblet structures. A full-scale 2.5MW Clipper wind turbine airfoil section (of 1 meter chord length, typical of the 88% blade span), was placed in the freestream flow of the wind tunnel at the Saint Anthony Falls Laboratory, University of Minnesota. Four different sizes of V-groove riblets were tested at different angles of attack at full scale Reynolds number of Re=2.67x106 (based on the airfoil chord length). Force sensors were used to measure Lift and Drag. A combination of single and cross-wire anemometers were also used to study the turbulent scale-to-scale interaction in the near wall region to better understand the physical mechanisms of drag reduction and flow characteristics in that region. The measurements will be used to develop and test the performance of near-wall boundary conditions in the context of RANS and hybrid RANS/LES models.
Direct growth of single-crystalline III–V semiconductors on amorphous substrates
Chen, Kevin; Kapadia, Rehan; Harker, Audrey; ...
2016-01-27
The III–V compound semiconductors exhibit superb electronic and optoelectronic properties. Traditionally, closely lattice-matched epitaxial substrates have been required for the growth of high-quality single-crystal III–V thin films and patterned microstructures. To remove this materials constraint, here we introduce a growth mode that enables direct writing of single-crystalline III–V’s on amorphous substrates, thus further expanding their utility for various applications. The process utilizes templated liquid-phase crystal growth that results in user-tunable, patterned micro and nanostructures of single-crystalline III–V’s of up to tens of micrometres in lateral dimensions. InP is chosen as a model material system owing to its technological importance. Themore » patterned InP single crystals are configured as high-performance transistors and photodetectors directly on amorphous SiO 2 growth substrates, with performance matching state-of-the-art epitaxially grown devices. In conclusion, the work presents an important advance towards universal integration of III–V’s on application-specific substrates by direct growth.« less
NASA Astrophysics Data System (ADS)
Hammond, R. B.; Paulter, N. G.; Wagner, R. S.
1984-08-01
Cross-correlation measurements of the response of photoconductor pulsers and sampling gates excited by a femtosecond laser are reported. The photoconductors were fabricated in microstrip transmission line structures on Si-on-sapphire, semiinsulating GaAs, and semiinsulating InP wafers. The photoconductor sampling gates were ion beam-damaged to produce short carrier lifetimes (less than 3 ps in one case). Damage was introduced with 6 MeV Ne-20 on the Si-on-sapphire, 2 MeV H-2 on the GaAs, and 2 MeV He-4 on the InP. Doses in the range 10 to the 12th - 10 to the 15th were used. Results show circuit limits to the time resolution in correlation measurements from two sources: (1) RC time constants due to photoconductor gap capacitance and transmission line characteristic impedance and (2) dispersion in microstrip transmission lines.
High-temperature effects on the light transmission through sapphire optical fiber
Wilson, Brandon A.; Petrie, Christian M.; Blue, Thomas E.
2018-03-13
Single crystal sapphire optical fiber was tested at high temperatures (1500°C) to determine its suitability for optical instrumentation in high-temperature environments. Broadband light transmission (450-2300 nm) through sapphire fiber was measured as a function of temperature as a test of the fiber's ability to survive and operate in high-temperature environments. Upon heating sapphire fiber to 1400°C, large amounts of light attenuation were measured across the entire range of light wavelengths that were tested. SEM and TEM images of the heated sapphire fiber indicated that a layer had formed at the surface of the fiber, most likely due to a chemicalmore » change at high temperatures. The microscopy results suggest that the surface layer may be in the form of aluminum hydroxide. Subsequent tests of sapphire fiber in an inert atmosphere showed minimal light attenuation at high temperatures along with the elimination of any surface layers on the fiber, indicating that the air atmosphere is indeed responsible for the increased attenuation and surface layer formation at high temperatures.« less
High-temperature effects on the light transmission through sapphire optical fiber
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wilson, Brandon A.; Petrie, Christian M.; Blue, Thomas E.
Single crystal sapphire optical fiber was tested at high temperatures (1500°C) to determine its suitability for optical instrumentation in high-temperature environments. Broadband light transmission (450-2300 nm) through sapphire fiber was measured as a function of temperature as a test of the fiber's ability to survive and operate in high-temperature environments. Upon heating sapphire fiber to 1400°C, large amounts of light attenuation were measured across the entire range of light wavelengths that were tested. SEM and TEM images of the heated sapphire fiber indicated that a layer had formed at the surface of the fiber, most likely due to a chemicalmore » change at high temperatures. The microscopy results suggest that the surface layer may be in the form of aluminum hydroxide. Subsequent tests of sapphire fiber in an inert atmosphere showed minimal light attenuation at high temperatures along with the elimination of any surface layers on the fiber, indicating that the air atmosphere is indeed responsible for the increased attenuation and surface layer formation at high temperatures.« less
Behzadirad, Mahmoud; Nami, Mohsen; Wostbrock, Neal; Zamani Kouhpanji, Mohammad Reza; Feezell, Daniel F; Brueck, Steven R J; Busani, Tito
2018-03-27
GaN nanowires are promising for optical and optoelectronic applications because of their waveguiding properties and large optical band gap. However, developing a precise, scalable, and cost-effective fabrication method with a high degree of controllability to obtain high-aspect-ratio nanowires with high optical properties and minimum crystal defects remains a challenge. Here, we present a scalable two-step top-down approach using interferometric lithography, for which parameters can be controlled precisely to achieve highly ordered arrays of nanowires with excellent quality and desired aspect ratios. The wet-etch mechanism is investigated, and the etch rates of m-planes {11̅00} (sidewalls) were measured to be 2.5 to 70 nm/h depending on the Si doping concentration. Using this method, uniform nanowire arrays were achieved over a large area (>10 5 μm 2 ) with an spect ratio as large as 50, a radius as small as 17 nm, and atomic-scale sidewall roughness (<1 nm). FDTD modeling demonstrated HE 11 is the dominant transverse mode in the nanowires with a radius of sub-100 nm, and single-mode lasing from vertical cavity nanowire arrays with different doping concentrations on a sapphire substrate was interestingly observed in photoluminescence measurements. High Q-factors of ∼1139-2443 were obtained in nanowire array lasers with a radius and length of 65 nm and 2 μm, respectively, corresponding to a line width of 0.32-0.15 nm (minimum threshold of 3.31 MW/cm 2 ). Our results show that fabrication of high-quality GaN nanowire arrays with adaptable aspect ratio and large-area uniformity is feasible through a top-down approach using interferometric lithography and is promising for fabrication of III-nitride-based nanophotonic devices (radial/axial) on the original substrate.
NASA Astrophysics Data System (ADS)
Khordad, R.
2010-03-01
The influence of temperature and pressure, simultaneously, on the binding energy of a hydrogenic donor impurity in a ridge GaAs/Ga 1- xAl xAs quantum wire is studied using a variational procedure within the effective mass approximation. The subband energy and the binding energy of the donor impurity in its ground state as a function of the wire bend width and impurity location at different temperatures and pressures are calculated. The results show that, when the temperature increases, the donor binding energy decreases for a constant applied pressure for all wire bend widths. Also, the binding energy increases by increasing the pressure for a constant temperature for all wire bend widths. In addition, when the temperature and pressure are applied simultaneously the binding energy decreases as the quantum wire bend width increases. On the whole, it is deduced that the temperature and pressure have important effects on the donor binding energy in a V-groove quantum wire.
Failure Analysis of Sapphire Refractive Secondary Concentrators
NASA Technical Reports Server (NTRS)
Salem, Jonathan A.; Quinn, George D.
2009-01-01
Failure analysis was performed on two sapphire, refractive secondary concentrators (RSC) that failed during elevated temperature testing. Both concentrators failed from machining/handling damage on the lens face. The first concentrator, which failed during testing to 1300 C, exhibited a large r-plane twin extending from the lens through much of the cone. The second concentrator, which was an attempt to reduce temperature gradients and failed during testing to 649 C, exhibited a few small twins on the lens face. The twins were not located at the origin, but represent another mode of failure that needs to be considered in the design of sapphire components. In order to estimate the fracture stress from fractographic evidence, branching constants were measured on sapphire strength specimens. The fractographic analysis indicated radial tensile stresses of 44 to 65 MPa on the lens faces near the origins. Finite element analysis indicated similar stresses for the first RSC, but lower stresses for the second RSC. Better machining and handling might have prevented the fractures, however, temperature gradients and resultant thermal stresses need to be reduced to prevent twinning.
Spiral groove seal. [for rotating shaft
NASA Technical Reports Server (NTRS)
Ludwig, L. P.; Strom, T. N. (Inventor)
1974-01-01
Mating flat surfaces inhibit leakage of a fluid around a stationary shaft. A spiral groove produces a pumping action toward the fluid when the shaft rotates. This prevents leakage while a generated hydraulic lifting force separates the mating surfaces to minimize wear. Provision is made for placing these spiral grooves in communication with the fluid to accelerate the generation of the hydraulic lifting force.
Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system
Backus, Sterling; Durfee, Charles; Lemons, Randy; ...
2017-02-10
Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less
Direct diode pumped Ti:sapphire ultrafast regenerative amplifier system
DOE Office of Scientific and Technical Information (OSTI.GOV)
Backus, Sterling; Durfee, Charles; Lemons, Randy
Here, we report on a direct diode-pumped Ti:sapphire ultrafast regenerative amplifier laser system producing multi-uJ energies with repetition rate from 50 to 250 kHz. By combining cryogenic cooling of Ti:sapphire with high brightness fiber-coupled 450nm laser diodes, we for the first time demonstrate a power-scalable CW-pumped architecture that can be directly applied to demanding ultrafast applications such as coherent high-harmonic EUV generation without any complex post-amplification pulse compression. Initial results promise a new era for Ti:sapphire amplifiers not only for ultrafast laser applications, but also for tunable CW sources. We discuss the unique challenges to implementation, as well as themore » solutions to these challenges.« less
Ti:sapphire - A theoretical assessment for its spectroscopy
NASA Astrophysics Data System (ADS)
Da Silva, A.; Boschetto, D.; Rax, J. M.; Chériaux, G.
2017-03-01
This article tries to theoretically compute the stimulated emission cross-sections when we know the oscillator strength of a broad material class (dielectric crystals hosting metal-transition impurity atoms). We apply the present approach to Ti:sapphire and check it by computing some emission cross-section curves for both π and σ polarizations. We also set a relationship between oscillator strength and radiative lifetime. Such an approach will allow future parametric studies for Ti:sapphire spectroscopic properties.
Optimizing Ti:Sapphire laser for quantitative biomedical imaging
NASA Astrophysics Data System (ADS)
James, Jeemol; Thomsen, Hanna; Hanstorp, Dag; Alemán Hérnandez, Felipe Ademir; Rothe, Sebastian; Enger, Jonas; Ericson, Marica B.
2018-02-01
Ti:Sapphire lasers are powerful tools in the field of scientific research and industry for a wide range of applications such as spectroscopic studies and microscopic imaging where tunable near-infrared light is required. To push the limits of the applicability of Ti:Sapphire lasers, fundamental understanding of the construction and operation is required. This paper presents two projects, (i) dealing with the building and characterization of custom built tunable narrow linewidth Ti:Sapphire laser for fundamental spectroscopy studies; and the second project (ii) the implementation of a fs-pulsed commercial Ti:Sapphire laser in an experimental multiphoton microscopy platform. For the narrow linewidth laser, a gold-plated diffraction grating with a Littrow geometry was implemented for highresolution wavelength selection. We demonstrate that the laser is tunable between 700 to 950 nm, operating in a pulsed mode with a repetition rate of 1 kHz and maximum average output power around 350 mW. The output linewidth was reduced from 6 GHz to 1.5 GHz by inserting an additional 6 mm thick etalon. The bandwidth was measured by means of a scanning Fabry Perot interferometer. Future work will focus on using a fs-pulsed commercial Ti:Sapphire laser (Tsunami, Spectra physics), operating at 80 MHz and maximum average output power around 1 W, for implementation in an experimental multiphoton microscopy set up dedicated for biomedical applications. Special focus will be on controlling pulse duration and dispersion in the optical components and biological tissue using pulse compression. Furthermore, time correlated analysis of the biological samples will be performed with the help of time correlated single photon counting module (SPCM, Becker&Hickl) which will give a novel dimension in quantitative biomedical imaging.
Plasma interaction with emmissive surface with Debye-scale grooves
NASA Astrophysics Data System (ADS)
Schweigert, Irina; Burton, Thomas S.; Thompson, Gregory B.; Langendorf, Samuel; Walker, Mitchell L. R.; Keidar, Michael
2018-04-01
The sheath development over emissive grooved surface in dc discharge plasma controlled by an electron beam is studied in the experiment and in 2D kinetic simulations. Grooved hexagonal boron nitride surfaces with different aspect ratios, designed to mimic the erosion channels, were exposed to an argon plasma. The characteristic size of the grooves (1 mm and 5 mm) is about of the Debye length. The secondary electrons emission from the grooved surfaces is provided by the bombardment with energetic electrons originated from the heated powered cathode. The transition between a developed and a collapsed sheaths near emissive surface takes place with an increase of the beam electron energy. For grooved emissive surfaces, the sheath transition happens at essentially higher voltage compared to the planar one. This phenomenon is analyzed in the terms of the electron energy distribution function.
Aptamer sensor for cocaine using minor groove binder based energy transfer.
Zhou, Jinwen; Ellis, Amanda V; Kobus, Hilton; Voelcker, Nicolas H
2012-03-16
We report on an optical aptamer sensor for cocaine detection. The cocaine sensitive fluorescein isothiocyanate (FITC)-labeled aptamer underwent a conformational change from a partial single-stranded DNA with a short hairpin to a double-stranded T-junction in the presence of the target. The DNA minor groove binder Hoechst 33342 selectively bound to the double-stranded T-junction, bringing the dye within the Förster radius of FITC, and therefore initiating minor groove binder based energy transfer (MBET), and reporting on the presence of cocaine. The sensor showed a detection limit of 0.2 μM. The sensor was also implemented on a carboxy-functionalized polydimethylsiloxane (PDMS) surface by covalently immobilizing DNA aptamers. The ability of surface-bound cocaine detection is crucial for the development of microfluidic sensors. Copyright © 2012 Elsevier B.V. All rights reserved.
NASA Astrophysics Data System (ADS)
Chen, P.-C.; Lin, P.-T.; Mikolas, D. G.; Tsai, Y.-W.; Wang, Y.-L.; Fu, C.-C.; Chang, S.-L.
2015-01-01
To provide coherent x-ray sources for probing the dynamic structures of solid or liquid biological substances on the picosecond timescale, a high-aspect-ratio x-ray resonator cavity etched from a single crystal substrate with a nearly vertical sidewall structure is required. Although high-aspect-ratio resonator cavities have been produced in silicon, they suffer from unwanted multiple beam effects. However, this problem can be avoided by using the reduced symmetry of single-crystal sapphire in which x-ray cavities may produce a highly monochromatic transmitted x-ray beam. In this study, we performed nominal 100 µm deep etching and vertical sidewall profiles in single crystal sapphire using inductively coupled plasma (ICP) etching. The large depth is required to intercept a useful fraction of a stopped-down x-ray beam, as well as for beam clearance. An electroplated Ni hard mask was patterned using KMPR 1050 photoresist and contact lithography. The quality and performance of the x-ray cavity depended upon the uniformity of the cavity gap and therefore verticality of the fabricated vertical sidewall. To our knowledge, this is the first report of such deep, vertical etching of single-crystal sapphire. A gas mixture of Cl2/BCl3/Ar was used to etch the sapphire with process variables including BCl3 flow ratio and bias power. By etching for 540 min under optimal conditions, we obtained an x-ray resonant cavity with a depth of 95 µm, width of ~30 µm, gap of ~115 µm and sidewall profile internal angle of 89.5°. The results show that the etching parameters affected the quality of the vertical sidewall, which is essential for good x-ray resonant cavities.
Single Mode Air-Clad Single Crystal Sapphire Optical Fiber
DOE Office of Scientific and Technical Information (OSTI.GOV)
Hill, Cary; Homa, Dan; Yu, Zhihao
The observation of single mode propagation in an air-clad single crystal sapphire optical fiber at wavelengths at and above 783 nm is presented for the first time. A high-temperature wet acid etching method was used to reduce the diameter of a 10 cm length of commercially-sourced sapphire fiber from 125 micrometers to 6.5 micrometers, and far-field imaging provided modal information at intervals as the fiber diameter decreased. Modal volume was shown to decrease with decreasing diameter, and single mode behavior was observed at the minimum diameter achieved. While weakly-guiding approximations are generally inaccurate for low modal volume optical fiber withmore » high core-cladding refractive index disparity, consistency between these approximations and experimental results was observed when the effective numerical aperture was measured and substituted for the theoretical numerical aperture in weakly-guiding approximation calculations. With the demonstration of very low modal volume in sapphire at fiber diameters much larger than anticipated by legacy calculations, the resolution of sapphire fiber distributed sensors may be increased and other sensing schemes requiring very low modal volume, such as fiber Bragg gratings, may be realized in extreme environment applications.« less
Single Mode Air-Clad Single Crystal Sapphire Optical Fiber
Hill, Cary; Homa, Dan; Yu, Zhihao; ...
2017-05-03
The observation of single mode propagation in an air-clad single crystal sapphire optical fiber at wavelengths at and above 783 nm is presented for the first time. A high-temperature wet acid etching method was used to reduce the diameter of a 10 cm length of commercially-sourced sapphire fiber from 125 micrometers to 6.5 micrometers, and far-field imaging provided modal information at intervals as the fiber diameter decreased. Modal volume was shown to decrease with decreasing diameter, and single mode behavior was observed at the minimum diameter achieved. While weakly-guiding approximations are generally inaccurate for low modal volume optical fiber withmore » high core-cladding refractive index disparity, consistency between these approximations and experimental results was observed when the effective numerical aperture was measured and substituted for the theoretical numerical aperture in weakly-guiding approximation calculations. With the demonstration of very low modal volume in sapphire at fiber diameters much larger than anticipated by legacy calculations, the resolution of sapphire fiber distributed sensors may be increased and other sensing schemes requiring very low modal volume, such as fiber Bragg gratings, may be realized in extreme environment applications.« less
NASA Astrophysics Data System (ADS)
Yin, Kai; Wang, Cong; Duan, Ji'an; Guo, Chunlei
2016-09-01
Sapphire has a potential as a new generation of electronics display. However, direct processing of sapphire surface by visible or near-IR laser light is challenging since sapphire is transparent to these wavelengths. In this study, we investigate the formation of femtosecond laser-induced periodic surface structures (LIPSSs) on sapphire coated with nanolayered gold film. We found a reduced threshold by about 25 % in generating uniform LIPSSs on sapphire due to the nanolayered gold film. Different thickness of nanolayered gold films are studied, and it is shown that the change in thickness does not significantly affect the threshold reduction. It is believed that the diffusion of hot electrons in the gold films increases interfacial carrier density and electron-phonon coupling that results in a reduced threshold and more uniform periodic surface structure generation.
NASA Astrophysics Data System (ADS)
Williams, Adrian Daniel
Gallium nitride (GaN) is a direct wide band gap semiconductor currently under heavy development worldwide due to interest in its applications in ultra-violet optoelectronics, power electronics, devices operating in harsh environments (high temperature or corrorsive), etc. While a number of devices have been demonstrated with this material and its related alloys, the unavailability of GaN substrates is seen as one of the current major bottlenecks to both material quality and device performance. This dissertation is concerned with the synthesis of high quality GaN substrates by the hydride vapor phase epitaxy method (HVPE). In this work, the flow of growth precursors in a home-built HVPE reactor was modeled by the Navier-Stokes equation and solved by finite element analysis to promote uniformity of GaN on 2'' sapphire substrates. Kinetics of growth was studied and various regimes of growth were identified to establish a methodology for HVPE GaN growth, independent of reactor geometry. GaN templates as well as bulk substrates were fabricated in this work. Realization of freestanding GaN substrates was achieved through discovery of a natural stress-induced method of separating bulk GaN from sapphire via mechanical failure of a low-temperature GaN buffer layer. Such a process eliminates the need for pre- or post-processing of sapphire substrates, as is currently the standard. Stress in GaN-on-sapphire is discussed, with the dominant contributor identified as thermal stress due to thermal expansion coefficient mismatch between the two materials. This thermal stress is analyzed using Stoney's equation and conditions for crack-free growth of thick GaN substrates were identified. An etch-back process for planarizing GaN templates was also developed and successfully applied to rough GaN templates. The planarization of GaN has been mainly addressed by chemo-mechanical polishing (CMP) methods in the literature, with notable shortcomings including the inability to effectively
The effects of femtosecond laser-textured Ti-6Al-4V on wettability and cell response.
Raimbault, Ophélie; Benayoun, Stephane; Anselme, Karine; Mauclair, Cyril; Bourgade, Tatiana; Kietzig, Anne-Marie; Girard-Lauriault, Pierre-Luc; Valette, Stephane; Donnet, Christophe
2016-12-01
To study the biological activity effects of femtosecond laser-induced structures on cell behavior, TA6V samples were micro-textured with focused femtosecond laser pulses generating grooves of various dimensions on the micrometer scale (width: 25-75μm; depth: 1-10μm). LIPSS (Laser Induced Periodic Surface Structures) were also generated during the laser irradiation, providing a supplementary structure (sinusoidal form) of hundreds of nanometers at the bottom of the grooves oriented perpendicular (⊥ LIPPS) or parallel (// LIPPS) to the direction of these grooves. C3H10 T1/2 murine mesenchymal stem cells were cultivated on the textured biomaterials. To have a preliminary idea of the spreading of biological media on the substrate, prior to cell culture, contact angle measurement were performed. This showed that the post-irradiation hydrophilicity of the samples can decrease with time according to its storage environment. The multiscale structuration either induced a collaborative or a competitive influence of the LIPSS and grooves on the cells. It has been shown that cells individually and collectively were most sensitive to microscale grooves which were narrower than 25μm and deeper than 5μm with ⊥ LIPPS. In some cases, cells were individually sensitive to the LIPSS but the cell layer organization did not exhibit significant differences in comparison to a non-textured surface. These results showed that cells are more sensitive to the nanoscale structures (LIPSS), unless the microstructures's size is close to the cell size and deeper than 5μm. There, the cells are sensitive to the microscale structures and go on spreading following these structures. Copyright © 2016 Elsevier B.V. All rights reserved.
Raman scattering in single-crystal sapphire at elevated temperatures
DOE Office of Scientific and Technical Information (OSTI.GOV)
Thapa, Juddha; Liu, Bo; Woodruff, Steven D.
Sapphire is a widely used high-temperature material and this work presents thorough characterization of all the measurable Raman scattering modes in sapphire and their temperature dependencies. Here, Raman scattering in bulk sapphire rods is measured from room temperature to 1081 °C and is illustrated as a method of noncontact temperature measurement. A single-line argon ion laser at 488 nm was used to excite the sapphire rods inside a cylindrical furnace. All the anti-Stokes peaks (or lines) were observable through the entire temperature range of interest, while Stokes peaks were observable until they were obscured by background thermal emission. Temperature measurementsmore » were found to be most reliable for A 1g and E g modes using the peaks at ±418, ±379, +578, +645, and, +750 cm -1 (+ and – are designated for Stokes and anti-Stokes peaks respectively). The 418 cm -1 peak was found to be the most intense peak. The temperature dependence of peak position, peak width, and peak area of the ±418 and ±379 peaks is presented. For +578, +645 and +750, the temperature dependence of peak position is presented. The peaks’ spectral positions provide the most precise temperature information within the experimental temperature range. Finally, the resultant temperature calibration curves are given, which indicate that sapphire can be used in high-temperature Raman thermometry with an accuracy of about 1.38°C average standard deviation over the entire >1000°C temperature range.« less
Raman scattering in single-crystal sapphire at elevated temperatures
Thapa, Juddha; Liu, Bo; Woodruff, Steven D.; ...
2017-10-25
Sapphire is a widely used high-temperature material and this work presents thorough characterization of all the measurable Raman scattering modes in sapphire and their temperature dependencies. Here, Raman scattering in bulk sapphire rods is measured from room temperature to 1081 °C and is illustrated as a method of noncontact temperature measurement. A single-line argon ion laser at 488 nm was used to excite the sapphire rods inside a cylindrical furnace. All the anti-Stokes peaks (or lines) were observable through the entire temperature range of interest, while Stokes peaks were observable until they were obscured by background thermal emission. Temperature measurementsmore » were found to be most reliable for A 1g and E g modes using the peaks at ±418, ±379, +578, +645, and, +750 cm -1 (+ and – are designated for Stokes and anti-Stokes peaks respectively). The 418 cm -1 peak was found to be the most intense peak. The temperature dependence of peak position, peak width, and peak area of the ±418 and ±379 peaks is presented. For +578, +645 and +750, the temperature dependence of peak position is presented. The peaks’ spectral positions provide the most precise temperature information within the experimental temperature range. Finally, the resultant temperature calibration curves are given, which indicate that sapphire can be used in high-temperature Raman thermometry with an accuracy of about 1.38°C average standard deviation over the entire >1000°C temperature range.« less
Femtosecond laser-induced blazed periodic grooves on metals.
Hwang, Taek Yong; Guo, Chunlei
2011-07-01
In this Letter, we generate laser-induced periodic surface structures (LIPSSs) on platinum following femtosecond laser pulse irradiation. For the first time to our knowledge, we study the morphological profile of LIPSSs over a broad incident angular range, and find that the morphological profile of LIPSSs depends significantly on the incident angle of the laser beam. We show that LIPSS grooves become more asymmetric at a larger incident angle, and the morphological profile of LIPSSs formed at an incident angle over 55° eventually resembles that of a blazed grating. Our study suggests that the formation of the blazed groove structures is attributed to the selective ablation of grooves through the asymmetric periodic surface heating following femtosecond pulse irradiation. The blazed grooves are useful for controlling the diffraction efficiency of LIPSSs.
Investigation of Low Cost Substrate Approaches for III-V Solar Cells
NASA Astrophysics Data System (ADS)
Lichty, Marlene Lydia
With the need for cleaner energy sources, which can displace fossil fuel, the solar cell industry is of particular interest due to the abundancy of the Sun. Silicon currently dominates terrestrial applications, but efficiency improvements have saturated. III-V based solar cells have reported the highest efficiencies, however, high costs due to substrates and fabrication processes have limited these devices to specialty applications, such as space. In order to reduce the cost associated with fabricating III-V semiconductor substrate material, two different approaches were taken in this work with a particular focus on making III-Vs more applicable outside of specialty applications, including InP, InAsnd Ge. Typical material characterization techniques were used to analyze the samples and processes studied in this thesis. The first process examined was the direct epitaxial growth of III-V materials by MOCVD on cheaper substrates. More specifically, the direct growth of InP and InAs on metal foils. A growth time study and surface coverage analysis was performed for the growth of InP. A characterization study was then conducted on the second process, the aluminum- induced crystallization of germanium to determine the effects this process had on the surface. Crystalline InP, InAs and Ge were successfully characterized in this work, and show promise for use in cheaper III-V alternatives to terrestrial energy solutions.
The Formation of Ganymede's Grooved Terrain: Importance of Strain Weakening
NASA Astrophysics Data System (ADS)
Bland, M. T.; McKinnon, W. B.; Showman, A. P.
2008-12-01
Nearly two-thirds of Ganymede's surface consists of relatively bright, young, tectonically deformed terrain dubbed grooved terrain. The grooved terrain consists of sets of parallel, undulatory ridges and troughs with peak to trough amplitudes of several hundred meters and periodic spacings that range from 3 to 10~km. The low slopes and periodic spacing of the grooves suggest that they formed via unstable extension of the ice lithosphere [e.g. Fink and Fletcher 1981, LPS XII; Pappalardo et al. 1998, Icarus 135]. Application of analytical models of unstable extension to Ganymede suggest that large amplitude grooves with appropriate wavelengths can form if the lithosphere is in pervasive brittle failure and if the lithospheric thermal gradient was relatively high (~45K km-1) [Dombard and McKinnon 2001, Icarus 154]; however, numerical models of unstable extension struggle to produce topographic amplitudes consistent with Ganymede's grooves (maximum amplitudes are a factor of five less than typical large amplitude grooves) [Bland and Showman 2007, Icarus 189]. The difficulties in producing large amplitude deformation may be overcome by the inclusion of strain weakening in models of groove formation. Strain weakening effects account for a material's tendency to strain more easily as viscous and/or plastic deformation accumulates, and as strain localizes in shear zones or along faults. When included in models of terrestrial extension, such effects can increase deformation amplitudes by up to several orders of magnitude [e.g. Fredericksen and Braun 2001, EPSL 188; Behn et al. 2002, EPSL 202]. Here we present the results of simulations of Ganymede's groove formation that include various strain weakening processes. Incorporation of a simple damage rheology, in which the yield strength of the ice lithosphere decreases as plastic strain accumulates, permits a factor of three increase in the amplitude of the simulated grooves, generating topography of 200~m or more. Such groove
High temperature sensing using higher-order-mode rejected sapphire-crystal fiber gratings
NASA Astrophysics Data System (ADS)
Zhan, Chun; Kim, Jae Hun; Lee, Jon; Yin, Stuart; Ruffin, Paul; Luo, Claire
2007-09-01
In this paper, we report the fabrication of higher-order-mode rejected fiber Bragg gratings (FBGs) in sapphire crystal fiber using infrared (IR) femtosecond laser illumination. The grating is tested in high temperature furnace up to 1600 degree Celsius. As sapphire fiber is only available as highly multimode fiber, a scheme to filter out higher order modes in favor for the fundamental mode is theoretically evaluated and experimentally demonstrated. The approach is to use an ultra thin sapphire crystal fiber (60 micron in diameter) to decrease the number of modes. The small diameter fiber also enables bending the fiber to certain radius which is carefully chosen to provide low loss for the fundamental mode LP01 and high loss for the other high-order modes. After bending, less-than-2-nm resonant peak bandwidth is achieved. The grating spectrum is improved, and higher resolution sensing measurement can be achieved. This mode filtering method is very easy to implement. Furthermore, the sapphire fiber is sealed with hi-purity alumina ceramic cement inside a flexible high temperature titanium tube, and the highly flexible titanium tube offers a robust packaging to sapphire fiber. Our high temperature sapphire grating sensor is very promising in extremely high temperature sensing application.
Review and perspective: Sapphire optical fiber cladding development for harsh environment sensing
NASA Astrophysics Data System (ADS)
Chen, Hui; Buric, Michael; Ohodnicki, Paul R.; Nakano, Jinichiro; Liu, Bo; Chorpening, Benjamin T.
2018-03-01
The potential to use single-crystal sapphire optical fiber as an alternative to silica optical fibers for sensing in high-temperature, high-pressure, and chemically aggressive harsh environments has been recognized for several decades. A key technological barrier to the widespread deployment of harsh environment sensors constructed with sapphire optical fibers has been the lack of an optical cladding that is durable under these conditions. However, researchers have not yet succeeded in incorporating a high-temperature cladding process into the typical fabrication process for single-crystal sapphire fibers, which generally involves seed-initiated fiber growth from the molten oxide state. While a number of advances in fabrication of a cladding after fiber-growth have been made over the last four decades, none have successfully transitioned to a commercial manufacturing process. This paper reviews the various strategies and techniques for fabricating an optically clad sapphire fiber which have been proposed and explored in published research. The limitations of current approaches and future prospects for sapphire fiber cladding are discussed, including fabrication methods and materials. The aim is to provide an understanding of the past research into optical cladding of sapphire fibers and to assess possible material systems for future research on this challenging problem for harsh environment sensors.
NASA Astrophysics Data System (ADS)
Reverchon, Jean-Luc; Gourdel, Yves; Robo, Jean-Alexandre; Truffer, Jean-Patrick; Costard, Eric; Brault, Julien; Duboz, Jean-Yves
2017-11-01
The fast development of nitrides has given the opportunity to investigate AlGaN as a material for ultraviolet detection. Such AlGaN based camera presents an intrinsic spectral selectivity and an extremely low dark current at room temperature. Firstly, we will present results on focal plane array of 320x256 pixels with a pitch of 30μm. The peak responsivity is around 280nm (solar-blind), 310nm and 360nm. These results are obtained in a standard SWIR supply chain (readout circuit, electronics). With the existing near-UV camera grown on sapphire, the short wavelength cutoff is due to a window layer improving the material quality of the active layer. The ultimate shortest wavelength would be 200nm due to sapphire substrate. We present here the ways to transfer the standard design of Schottky photodiodes from sapphire to silicon substrate. We will show the capability to remove the silicon substrate, and etch the window layer in order to extend the band width to lower wavelengths.
Experimental investigation of turbulent flow in smooth and longitudinal grooved tubes
NASA Technical Reports Server (NTRS)
Nitschke, P.
1984-01-01
Turbulent flow in tubes with and without longitudinal grooves is examined. The discovery of fine grooves forming a sort of streamline pattern on the body of sharks led to the expectation that the grooves on a surface reduce the momentum change, and thus the drag. To test this thesis, drag law, velocity profile and the profile of the velocity fluctuation were determined. Results show that for moderate Reynolds numbers the drag coefficient for grooved tubes is about 3 percent smaller than that of the smooth tubes. At higher Reynolds numbers, however, the drag coefficient for grooved tubes becomes larger than that for smooth tubes. No significant differences in the velocity profiles between grooved tubes and smooth tubes are found.
Flow visualization study of grooved surface/surfactant/air sheet interaction
NASA Technical Reports Server (NTRS)
Reed, Jason C.; Weinstein, Leonard M.
1989-01-01
The effects of groove geometry, surfactants, and airflow rate have been ascertained by a flow-visualization study of grooved-surface models which addresses the possible conditions for skin friction-reduction in marine vehicles. It is found that the grooved surface geometry holds the injected bubble stream near the wall and, in some cases, results in a 'tube' of air which remains attached to the wall. It is noted that groove dimension and the use of surfactants can substantially affect the stability of this air tube; deeper grooves, surfactants with high contact angles, and angled air injection, are all found to increase the stability of the attached air tube, while convected disturbances and high shear increase interfacial instability.
Titanium-doped sapphire laser research and design study
NASA Technical Reports Server (NTRS)
Moulton, Peter F.
1987-01-01
Three main topics were considered in this study: the fundamental laser parameters of titanium-doped sapphire, characterization of commercially grown material, and design of a tunable, narrow-linewidth laser. Fundamental parameters investigated included the gain cross section, upper-state lifetime as a function of temperature and the surface-damage threshold. Commercial material was found to vary widely in the level of absorption of the laser wavelength with the highest absorption in Czochralski-grown crystals. Several Yi:sapphire lasers were constructed, including a multimode laser with greater than 50mJ of output energy and a single-transverse-mode ring laser, whose spectral and temporal characteristics were completely characterized. A design for a narrow-linewidth (single-frequency) Ti:sapphire laser was developed, based on the results of the experimental work. The design involves the use of a single-frequency, quasi-cw master oscillator, employed as an injection source for a pulsed ring laser.
Reducing Water/Hull Drag By Injecting Air Into Grooves
NASA Technical Reports Server (NTRS)
Reed, Jason C.; Bushnell, Dennis M.; Weinstein, Leonard M.
1991-01-01
Proposed technique for reduction of friction drag on hydrodynamic body involves use of grooves and combinations of surfactants to control motion of layer on surface of such body. Surface contains many rows of side-by-side, evenly spaced, longitudinal grooves. Dimensions of grooves and sharpnesses of tips in specific case depends on conditions of flow about vessel. Requires much less air than does microbubble-injection method.
NASA Astrophysics Data System (ADS)
Knapp, Wolfgang; Gillet, Vincent; Courant, Bruno; Aubignat, Emilie; Costil, Sophie; Langlade, Cécile
2017-02-01
Surface pre-treatment is fundamental in thermal spraying processes to obtain a sufficient bonding strength between substrate and coating. Different pre-treatments can be used, mostly grit-blasting for current industrial applications. This study is focused on Cu-Al2O3 coatings obtained by Low Pressure Cold Spray on AW5083 aluminum alloy substrate. Bonding strength is measured by tensile adhesion test, while deposition efficiency is measured. Substrates are textured by laser, using a pattern of equally spaced grooves with almost constant diameter and variations of depth. Results show that bonding strength is improved up to +81% compared to non-treated substrate, while deposition efficiency remains constant. The study of the samples after rupture reveals a modification of the failure mode, from mixed failure to cohesive failure. A modification of crack propagation is also noticed, the shape of laser textured grooves induces a deviation of cracks inside the coating instead of following the interface between the layers.
Static and dynamic characteristics of parallel-grooved seals
NASA Technical Reports Server (NTRS)
Iwatsubo, Takuzo; Yang, Bo-Suk; Ibaraki, Ryuji
1987-01-01
Presented is an analytical method to determine static and dynamic characteristics of annular parallel-grooved seals. The governing equations were derived by using the turbulent lubrication theory based on the law of fluid friction. Linear zero- and first-order perturbation equations of the governing equations were developed, and these equations were analytically investigated to obtain the reaction force of the seals. An analysis is presented that calculates the leakage flow rate, the torque loss, and the rotordynamic coefficients for parallel-grooved seals. To demonstrate this analysis, we show the effect of changing number of stages, land and groove width, and inlet swirl on stability of the boiler feed water pump seals. Generally, as the number of stages increased or the grooves became wider, the leakage flow rate and rotor-dynamic coefficients decreased and the torque loss increased.
Grooved Fuel Rings for Nuclear Thermal Rocket Engines
NASA Technical Reports Server (NTRS)
Emrich, William
2009-01-01
An alternative design concept for nuclear thermal rocket engines for interplanetary spacecraft calls for the use of grooved-ring fuel elements. Beyond spacecraft rocket engines, this concept also has potential for the design of terrestrial and spacecraft nuclear electric-power plants. The grooved ring fuel design attempts to retain the best features of the particle bed fuel element while eliminating most of its design deficiencies. In the grooved ring design, the hydrogen propellant enters the fuel element in a manner similar to that of the Particle Bed Reactor (PBR) fuel element.
Grooved Terrain on Ganymede: A Galileo-based Synthesis
NASA Technical Reports Server (NTRS)
Pappalardo, Robert T.; Collins, Geoffrey C.; Head, James W.; Moore, Jeffrey M.; Schenk, Paul M.
2003-01-01
Swaths of bright "grooved terrain" (sulci) on Ganymede are 10s to 100s of kilometers wide and cross-cut the older dark terrain, forming an intricate patchwork across 2/3 of Ganymede's surface. The view of grooved terrain developed from Voyager images is that bright cells are broad graben infilled by extrusion of relatively clean (silicate-poor) liquid water, warm ice, or icy slush, and then extended and faulted. Galileo imaging has greatly improved understanding of the emplacement history and geological implications of grooved terrain, supporting a rift-like model for its formation.
Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
NASA Astrophysics Data System (ADS)
Khan, M. A.; Skogman, R. A.; van Hove, J. M.; Olson, D. T.; Kuznia, J. N.
1992-03-01
In this letter the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates is reported. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. As best as is known this is the first report of insulating GaN films which show excellent band-edge photoluminescence.
NASA Astrophysics Data System (ADS)
Vuye, Cedric; Couscheir, Karolien; Lauriks, Leen; Van den bergh, Wim; Van Bouwel, Philippe
2017-09-01
After the first rehabilitation of runway 07R/25L in 2015, runway 01/19 was reconstructed in the summer of 2016, as part of a cycle where all runway pavements at Brussels airport are completely renovated each thirty years. The top layer is a Marshall asphalt with a polymer modified bitumen. To optimize the water drainage the central part of the runway (47 m wide) is grooved instead of applying an anti-skid layer. In this paper the focus is on the durability of the grooved top layer. Two different Marshall asphalt mixtures with a different maximum granulate size (10 mm or 14 mm) are compared, both in the laboratory and in a full-scale trial. In the laboratory the resistance against rutting and raveling are investigated for both mixtures with and without adhesion promotor, which did not show a positive effect. In the full-scale trial the compactability and impact of both a longer curing period and a variation in the degree of compaction on the groove stability is investigated for both mixtures using a heavy truck. No visual differences could be found except in areas which were undercompacted and showed more damage to the grooves.
Rear-side picosecond laser ablation of indium tin oxide micro-grooves
NASA Astrophysics Data System (ADS)
Liu, Peng; Wang, Wenjun; Mei, Xuesong; Liu, Bin; Zhao, Wanqin
2015-06-01
A comparative study of the fabrication of micro-grooves in indium tin oxide films by picosecond laser ablation for application in thin film solar cells is presented, evaluating the variation of different process parameters. Compared with traditional front-side ablation, rear-side ablation results in thinner grooves with varying laser power at a certain scan speed. In particular, and in contrast to front-side ablation, the width of the micro-grooves remains unchanged when the scan speed was changed. Thus, the micro-groove quality can be optimized by adjusting the scan speed while the groove width would not be affected. Furthermore, high-quality micro-grooves with ripple free surfaces and steep sidewalls could only be achieved when applying rear-side ablation. Finally, the formation mechanism of micro-cracks on the groove rims during rear-side ablation is analyzed and the cracks can be almost entirely eliminated by an optimization of the scan speed.
Silicon-Germanium Films Grown on Sapphire for Ka-Band Communications Applications
NASA Technical Reports Server (NTRS)
Alterovitz, Samuel A.; Mueller, Carl H.; Croke, Edward T.
2004-01-01
NASA's vision in the space communications area is to develop a broadband data network in which there is a high degree of interconnectivity among the various satellite systems, ground stations, and wired systems. To accomplish this goal, we will need complex electronic circuits integrating analog and digital data handling at the Ka-band (26 to 40 GHz). The purpose of this project is to show the feasibility of a new technology for Ka-band communications applications, namely silicon germanium (SiGe) on sapphire. This new technology will have several advantages in comparison to the existing silicon-substrate- based circuits. The main advantages are extremely low parasitic reactances that enable much higher quality active and passive components, better device isolation, higher radiation tolerance, and the integration of digital and analog circuitry on a single chip.
Wu, Tsung-Hsien; Li, Chia-Hui; Tang, Ming-Jer; Liang, Jen-I; Chen, Chia-Hsin; Yeh, Ming-Long
2013-10-01
The epithelial to mesenchymal transition (EMT) involves several physiological and pathological phenomena and endows cells with invasive and migratory properties. However, the effects of substrate stiffness and topography on the migration of cells before or after transforming growth factor-β1 (TGF-β1)-induced EMT (tEMT) are unknown. Herein, we seed control or tEMT NMuMG cells on the 2D patterns consisted of 1 μm or 5 μm line-widths and groove or cone patterns on either 2 MPa (1.96 ± 0.48 MPa) or 4 MPa (3.70 ± 0.74 MPa) polydimethylsiloxane (PDMS) substrates. After tEMT, the increased expression of α-SMA with vinculin in focal adhesion (FA) sites led to an acceleration of tEMT cell motility. On the 2 MPa substrate, the most influenced substrate was the 1 μm, cone-patterned substrate, where the tEMT cells' motility decelerated by 0.13 μm/min (36% slower than the cells on groove pattern). However, on the 5 μm, groove-patterned substrate, where the tEMT cells demonstrated the most rapid motility relative to the control cells, with an increment of 0.18 μm/min (100%). Among the different physical cues from substrate, the cone pattern could impede the migration speed of tEMT cells. Furthermore, we recommend the groove-patterned with a 5 μm line-width substrate as a useful tool to differentiate control and tEMT cells by migration speed.
Wang, Xiang; Wu, Tong; Wang, Wei; Huang, Chen; Jin, Xiangyu
2016-01-01
A novel type of protein fibers, regenerated collagen fibers (RC) from cattle skin, was prepared through wet-spinning. Due to the combined effect of solvent exchange and subsequent drawing process, the fibers were found to have a grooved surface texture. The grooves provided not only ordered topographical cues, but also increased surface area. Protein content of the RC fibers was confirmed by Fourier Transform infrared spectroscopy (FTIR) and ninhydrin color reaction. The fibers could be readily fabricated into nonwovens or other textiles, owning to their comparable physical properties to other commercialized fibers. Cell growth behavior on RC nonwovens suggested both early adhesion and prompt proliferation. The high moisture regain, good processability, along with the excellent cytocompatibility indicated that the RC fibers and nonwovens developed in this study might offer a good candidate for biomedical and healthcare applications. Copyright © 2015 Elsevier B.V. All rights reserved.
Molecular-orbital model for metal-sapphire interfacial strength
NASA Technical Reports Server (NTRS)
Johnson, K. H.; Pepper, S. V.
1982-01-01
Self-consistent-field X-Alpha scattered-wave cluster molecular-orbital models have been constructed for transition and noble metals (Fe, Ni, Cu, and Ag) in contact with a sapphire (Al2O3) surface. It is found that a chemical bond is established between the metal d-orbital electrons and the nonbonding 2p-orbital electrons of the oxygen anions on the Al2O3 surface. An increasing number of occupied metal-sapphire antibonding molecular orbitals explains qualitatively the observed decrease of contact shear strength through the series Fe, Ni, Cu, and Ag.
NASA Astrophysics Data System (ADS)
Zigler, A.; Palchan, T.; Bruner, N.; Schleifer, E.; Eisenmann, S.; Botton, M.; Henis, Z.; Pikuz, S. A.; Faenov, A. Y., Jr.; Gordon, D.; Sprangle, P.
2011-04-01
We report on the first generation of 5.5-7.5 MeV protons by a moderate-intensity short-pulse laser (˜5×1017W/cm2, 40 fsec) interacting with frozen H2O nanometer-size structure droplets (snow nanowires) deposited on a sapphire substrate. In this setup, the laser intensity is locally enhanced by the snow nanowire, leading to high spatial gradients. Accordingly, the nanoplasma is subject to enhanced ponderomotive potential, and confined charge separation is obtained. Electrostatic fields of extremely high intensities are produced over the short scale length, and protons are accelerated to MeV-level energies.
The Impact of GaN/Substrate Thermal Boundary Resistance on a HEMT Device
2011-11-01
stack between the GaN and Substrate layers. The University of Bristol recently reported that this TBR in commercial devices on Silicon Carbide ( SiC ...Circuit RF Radio Frequency PA Power Amplifier SiC Silicon Carbide FEA Finite Element Analysis heff Effective Heat transfer Coefficient (W/m 2 K...substrate material switched from sapphire to silicon , and by another factor of two from silicon to SiC . TABLE 1: SAMPLE RESULTS FROM DOUGLAS ET AL. FOR
Interproximal grooving in the Atapuerca-SH hominid dentitions.
Bermúdez de Castro, J M; Arsuaga, J L; Pérez, P J
1997-03-01
The dental sample recovered from the Sima de los Huesos (SH) Middle Pleistocene cave site of the Sierra de Atapuerca (Spain) includes 296 specimens. Interproximal wear grooves have been observed in 20 maxillary and mandibular posterior teeth belonging to at least five of the 32 individuals identified so far in the SH hypodigm. Interproximal grooving affected only the adults, and at an age between 25 and 40 years. The appearance, morphology, and location pattern of the SH wear grooves are similar to those reported in other fossil hominids and in more recent human populations. Two alternative proposals, the toothpicking and the fiber or sinew processing hypotheses, compete for explaining the formation of this anomalous wear. The characteristics observed in the wear grooves of the SH teeth are compatible only with the habitual probing of interdental spaces by means of hard and inflexible objects. Dietary grit may also have contributed to the abrasion of the root walls during the motion of the dental probes.
Effectiveness of transverse grooves in rigid pavement
NASA Astrophysics Data System (ADS)
Gurney, G. F.; Bryden, J. E.
1982-10-01
Transverse grooves were installed at 11 intersection approaches on worn rigid pavement to reduce a high rate of wet road accidents. In most cases, accident reductions were experienced only at intersections with multiple negative operational characteristics, including higher approach speeds, limited sight distances, and frequent vehicle stopping for turns or stop signs. Intersections with no more than one negative characteristic generally did not benefit from grooving.
Evaporator film coefficients of grooved heat pipes
NASA Technical Reports Server (NTRS)
Kamotani, Y.
1978-01-01
The heat transfer rate in the meniscus attachment region of a grooved heat pipe evaporator is studied theoretically. The analysis shows that the evaporation takes place mainly in the region where the liquid changes its shape sharply. However, comparisons with available heat transfer data indicate that the heat transfer rate in the meniscus varying region is substantially reduced probably due to groove wall surface roughness.
Liu, Shu; Bolger, Joshua K; Kirkland, Lindsay O; Premnath, Padmavathy N; McInnes, Campbell
2010-12-17
An alternative strategy for inhibition of the cyclin dependent kinases (CDKs) in antitumor drug discovery is afforded through the substrate recruitment site on the cyclin positive regulatory subunit. Critical CDK substrates such as the Rb and E2F families must undergo cyclin groove binding before phosphorylation, and hence inhibitors of this interaction also block substrate specific kinase activity. This approach offers the potential to generate highly selective and cell cycle specific CDK inhibitors and to reduce the inhibition of transcription mediated through CDK7 and 9, commonly observed with ATP competitive compounds. While highly potent peptide and small molecule inhibitors of CDK2/cyclin A, E substrate recruitment have been reported, little information has been generated on the determinants of inhibitor binding to the cyclin groove of the CDK4/cyclin D1 complex. CDK4/cyclin D is a validated anticancer drug target and continues to be widely pursued in the development of new therapeutics based on cell cycle blockade. We have therefore investigated the structural basis for peptide binding to its cyclin groove and have examined the features contributing to potency and selectivity of inhibitors. Peptidic inhibitors of CDK4/cyclin D of pRb phosphorylation have been synthesized, and their complexes with CDK4/cyclin D1 crystal structures have been generated. Based on available structural information, comparisons of the cyclin grooves of cyclin A2 and D1 are presented and provide insights into the determinants for peptide binding and the basis for differential binding and inhibition. In addition, a complex structure has been generated in order to model the interactions of the CDKI, p27(KIP)¹, with cyclin D1. This information has been used to shed light onto the endogenous inhibition of CDK4 and also to identify unique aspects of cyclin D1 that can be exploited in the design of cyclin groove based CDK inhibitors. Peptidic and nonpeptidic compounds have been
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tada, Takuji; Murakoshi, Dai; Ishii, Hiroyasu
2012-07-31
In order to improve the image quality of X-ray refraction images using a Talbot-Lau interferometer, we have been attempting to fabricate gratings with high aspect ratio. In our attempt, deep grooves of grating structure were channeled on a Si substrate bonded by Au diffusion bonding method, and the grooves were filled with Au where the Au layer used for the bonding Si substrate was acting as a seed layer of Au electroplating. From the results of a visibility measurement and a cross sectional SEM image, it was confirmed that the grooves with a pitch of 5.8 {mu}m and a depthmore » of 100 {mu}m could be successfully filled with Au over a large area of 72 Multiplication-Sign 80 mm{sup 2}. Using this grating, the X-ray refraction images for the cartilage of a knee joint of a livestock pig could be obtained where SPS method was employed for the single-shot image acquisition.« less
[The design of all solid-state tunable pulsed Ti:sapphire laser system].
Chen, Zhe; Ku, Geng; Wan, Junchao; Wang, Wei; Zhou, Chuanqing
2013-05-01
This paper presented a design of broadly all solid-state tunable pulsed Ti:sapphire laser with high power and stable performance. The laser was pumped by custom-made Nd:YAG laser which had water cooling system and amplified by two stage amplifier. The method accomplished tunable output of all solid-state tunable pulsed Ti:sapphire laser by modifying the reflection angle of the back mirror. We investigated the relationship between the power of the pumping laser and the all solid-state tunable pulsed Ti: sapphire laser by changing the power of the pumping source.
Schilling, Martin; Ziemann, Paul; Zhang, Zaoli; Biskupek, Johannes; Kaiser, Ute; Wiedwald, Ulf
2016-01-01
Texture formation and epitaxy of thin metal films and oriented growth of nanoparticles (NPs) on single crystal supports are of general interest for improved physical and chemical properties especially of anisotropic materials. In the case of FePt, the main focus lies on its highly anisotropic magnetic behavior and its catalytic activity, both due to the chemically ordered face-centered tetragonal (fct) L10 phase. If the c-axis of the tetragonal system can be aligned normal to the substrate plane, perpendicular magnetic recording could be achieved. Here, we study the orientation of FePt NPs and films on a-SiO2/Si(001), i.e., Si(001) with an amorphous (a-) native oxide layer on top, on MgO(001), and on sapphire(0001) substrates. For the NPs of an approximately equiatomic composition, two different sizes were chosen: "small" NPs with diameters in the range of 2-3 nm and "large" ones in the range of 5-8 nm. The 3 nm thick FePt films, deposited by pulsed laser deposition (PLD), served as reference samples. The structural properties were probed in situ, particularly texture formation and epitaxy of the specimens by reflection high-energy electron diffraction (RHEED) and, in case of 3 nm nanoparticles, additionally by high-resolution transmission electron microscopy (HRTEM) after different annealing steps between 200 and 650 °C. The L10 phase is obtained at annealing temperatures above 550 °C for films and 600 °C for nanoparticles in accordance with previous reports. On the amorphous surface of a-SiO2/Si substrates we find no preferential orientation neither for FePt films nor nanoparticles even after annealing at 630 °C. On sapphire(0001) supports, however, FePt nanoparticles exhibit a clearly preferred (111) orientation even in the as-prepared state, which can be slightly improved by annealing at 600-650 °C. This improvement depends on the size of NPs: Only the smaller NPs approach a fully developed (111) orientation. On top of MgO(001) the effect of annealing on
Schilling, Martin; Ziemann, Paul; Zhang, Zaoli; Biskupek, Johannes; Kaiser, Ute
2016-01-01
Summary Texture formation and epitaxy of thin metal films and oriented growth of nanoparticles (NPs) on single crystal supports are of general interest for improved physical and chemical properties especially of anisotropic materials. In the case of FePt, the main focus lies on its highly anisotropic magnetic behavior and its catalytic activity, both due to the chemically ordered face-centered tetragonal (fct) L10 phase. If the c-axis of the tetragonal system can be aligned normal to the substrate plane, perpendicular magnetic recording could be achieved. Here, we study the orientation of FePt NPs and films on a-SiO2/Si(001), i.e., Si(001) with an amorphous (a-) native oxide layer on top, on MgO(001), and on sapphire(0001) substrates. For the NPs of an approximately equiatomic composition, two different sizes were chosen: “small” NPs with diameters in the range of 2–3 nm and “large” ones in the range of 5–8 nm. The 3 nm thick FePt films, deposited by pulsed laser deposition (PLD), served as reference samples. The structural properties were probed in situ, particularly texture formation and epitaxy of the specimens by reflection high-energy electron diffraction (RHEED) and, in case of 3 nm nanoparticles, additionally by high-resolution transmission electron microscopy (HRTEM) after different annealing steps between 200 and 650 °C. The L10 phase is obtained at annealing temperatures above 550 °C for films and 600 °C for nanoparticles in accordance with previous reports. On the amorphous surface of a-SiO2/Si substrates we find no preferential orientation neither for FePt films nor nanoparticles even after annealing at 630 °C. On sapphire(0001) supports, however, FePt nanoparticles exhibit a clearly preferred (111) orientation even in the as-prepared state, which can be slightly improved by annealing at 600–650 °C. This improvement depends on the size of NPs: Only the smaller NPs approach a fully developed (111) orientation. On top of MgO(001) the
Simulation of multipactor on the rectangular grooved dielectric surface
DOE Office of Scientific and Technical Information (OSTI.GOV)
Cai, Libing; Wang, Jianguo, E-mail: wanguiuc@mail.xjtu.edu.cn; Northwest Institute of Nuclear Technology, Xi'an, Shaanxi 710024
2015-11-15
Multipactor discharge on the rectangular grooved dielectric surface is simulated self-consistently by using a two-and-a-half dimensional (2.5 D) electrostatic particle-in-cell (PIC) code. Compared with the electromagnetic PIC code, the former can give much more accurate solution for the space charge field caused by the multipactor electrons and the deposited surface charge. According to the rectangular groove width and height, the multipactor can be divided into four models, the spatial distributions of the multipactor electrons and the space charge fields are presented for these models. It shows that the rectangular groove in different models gives very different suppression effect on themore » multipactor, effective and efficient suppression on the multipactor can only be reached with a proper groove size.« less
Zhang, Qing; Dong, Hua; Li, Yuli; Zhu, Ye; Zeng, Lei; Gao, Huichang; Yuan, Bo; Chen, Xiaofeng; Mao, Chuanbin
2015-10-21
Surface topography can affect cell adhesion, morphology, polarity, cytoskeleton organization, and osteogenesis. However, little is known about the effect of topography on the fracture healing in repairing nonunion and large bone defects. Microgrooved topography on the surface of bone implants may promote cell migration into the fracture gap to accelerate fracture healing. To prove this hypothesis, we used an in vitro fracture (wound) healing assay on the microgrooved polycaprolactone substrates to study the effect of microgroove widths and depths on the osteoblast-like cell (MG-63) migration and the subsequent healing. We found that the microgrooved substrates promoted MG-63 cells to migrate collectively into the wound gap, which serves as a fracture model, along the grooves and ridges as compared with the flat substrates. Moreover, the groove widths did not show obvious influence on the wound healing whereas the smaller groove depths tended to favor the collective cell migration and thus subsequent healing. The microgrooved substrates accelerated the wound healing by facilitating the collective cell migration into the wound gaps but not by promoting the cell proliferation. Furthermore, microgrooves were also found to promote the migration of human mesenchymal stem cells (hMSCs) to heal the fracture model. Though osteogenic differentiation of hMSCs was not improved on the microgrooved substrate, collagen I and minerals deposited by hMSCs were organized in a way similar to those in the extracellular matrix of natural bone. These findings suggest the necessity in using microgrooved implants in enhancing fracture healing in bone repair.
Laser window with annular grooves for thermal isolation
Warner, B.E.; Horton, J.A.; Alger, T.W.
1983-07-13
A laser window or other optical element which is thermally loaded, heats up and causes optical distortions because of temperature gradients between the center and the edge. A number of annular grooves, one to three or more, are formed in the element between a central portion and edge portion, producing a web portion which concentrates the thermal gradient and thermally isolates the central portion from the edge portion, producing a uniform temperature profile across the central portion and therefore reduce the optical distortions. The grooves are narrow and closely spaced with respect to the thickness of the element, and successive grooves are formed from alternate sides of the element.
NASA Astrophysics Data System (ADS)
Tanikawa, Tomoyuki; Shojiki, Kanako; Aisaka, Takashi; Kimura, Takeshi; Kuboya, Shigeyuki; Hanada, Takashi; Katayama, Ryuji; Matsuoka, Takashi
2014-01-01
With respect to N-polar (000\\bar{1}) GaN grown on a sapphire substrate, the effects of Mg doping on the surface morphology, and the optical, and electrical properties are precisely investigated. By doping Mg, hillocks observed on the surface of (000\\bar{1}) GaN can be suppressed, while step bunching becomes severe. The atomic terrace width is extended with increasing Mg/Ga precursor ratio. Mg doping can promote the surface migration of Ga adatoms on a GaN surface during growth. In the case of heavily Mg-doped GaN, atomic steps become wavy. From photoluminescence spectra, the dominant transition was found to change from near-band-edge transition to donor-acceptor-pair transition. Hall-effect measurement shows p-type conduction at room temperature for a sample grown with the Mg/Ga precursor ratio of 4.5 × 10-3. The activation energy is 143 meV, which is comparable to that of Mg in the conventional Ga-polar (0001) GaN.
1935-05-16
that many of the olateo tested do sux^ ass the reouired limita by a considerable margin. Therefore, the efficiency of these grooved plate...Plpte Thicknesn B>lll<tle .Llji^f - ./.. s... a’ ^ea:: of All RtSUltS !’ Teen of Rlgbeot lOf of All Reoultr. s/i«- 1830 an« 7/16" ?180
Topography and Albedo Image of Grooved Terrain on Vesta
2011-11-29
These images from NASA Dawn spacecraft show part of the grooved terrain in asteroid Vesta Pinaria quadrangle, which is in the southern hemisphere. Large-scale grooves and depressions can be seen running diagonally across the image.
Presence of a groove in the lateral wall of the human orbit.
Santo Neto, H; Penteado, C V; de Carvalho, V C
1984-01-01
The presence of a groove in the lateral wall of the human orbit (Royle, 1973) was found in 45 of 100 orbits examined (45%). In 15 skulls the groove was present bilaterally. The groove probably lodges an anastomosis between the middle meningeal and infraorbital blood vessels. No reference to this groove was found in general anatomical texts. Images Fig. 1 PMID:6746401
The SSME seal test program: Leakage tests for helically-grooved seals
NASA Technical Reports Server (NTRS)
Childs, D. W.
1983-01-01
Helically grooved annular seal configurations were tested in highly turbulent flow to determine if reduced leakage and enhanced stability would result from the pumping action of the seal. It was found that: (1) leakage of a helically grooved seals decreases with running speed; (2) leakage reduction due to increased running speed is greater at lower values of R sub a; (3) an asymptote for leakage reduction is indicated with increasing running speed; (4) leakage is reduced by reducing the ridge (minimum) and average clearances; (5) leakage increases with increasing pitch angles and with increasing groove depth. Plain seals with smooth rotors and stators will leak more than a helically grooved seal. It was also found that plain seals with a rough rotor and a rough stator leak less than a properly designed helically grooved seal. A properly designed helically grooved seal consumes at least twice as much power as a conventional annular seal.
Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition
NASA Astrophysics Data System (ADS)
Asif Khan, M.; Skogman, R. A.; Van Hove, J. M.; Olson, D. T.; Kuznia, J. N.
1992-03-01
In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaN films which show excellent band-edge photoluminescence.
Investigations of gain redshift in high peak power Ti:sapphire laser systems
NASA Astrophysics Data System (ADS)
Wu, Fenxiang; Yu, Linpeng; Zhang, Zongxin; Li, Wenkai; Yang, Xiaojun; Wu, Yuanfeng; Li, Shuai; Wang, Cheng; Liu, Yanqi; Lu, Xiaoming; Xu, Yi; Leng, Yuxin
2018-07-01
Gain redshift in high peak power Ti:sapphire laser systems can result in narrowband spectral output and hence lengthen the compressed pulse duration. In order to realize broadband spectral output in 10 PW-class Ti:sapphire lasers, the influence on gain redshift induced by spectral pre-shaping, gain distribution of cascaded amplifiers and Extraction During Pumping (EDP) technique have been investigated. The theoretical and experimental results show that the redshift of output spectrum is sensitive to the spectral pre-shaping and the gain distribution of cascaded amplifiers, while insensitive to the pumping scheme with or without EDP. Moreover, the output spectrum from our future 10 PW Ti:sapphire laser is theoretically analyzed based on the investigations above, which indicates that a Fourier-transform limited (FTL) pulse duration of 21 fs can be achieved just by optimizing the spectral pre-shaping and gain distribution in 10 PW-class Ti:sapphire lasers.
Gas Seal Pad With Herringbone-Grooved Rotor-Stiffness and Load Capacity
NASA Technical Reports Server (NTRS)
Flemming, David P.
2006-01-01
The principle of herringbone-grooved journal bearings has been applied to the case of a seal disc running under a finger seal pad. The inward pumping action of herringbone grooves on the disc generates load capacity and stiffness to maintain a fluid film and prevent contact of the pad and disc. This mechanism does not depend on a converging film under the pad, such as analyzed in previous works. Analysis shows that significant stiffness and load capacity can be supplied by herringbone grooves. In order for the grooves to be effective, the seal pressure drop must be taken outside of the grooved portion of the rotor, but this may be acceptable in order to gain freedom from maintaining a precise film convergence.
Fabrication of Monolithic Sapphire Membranes for High Tc Bolometer Array Development
NASA Technical Reports Server (NTRS)
Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.
2003-01-01
This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to hot H2SO4:H3PO4 etchant, will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology and elemental concentration of the Pt/Cr thin film layers and (2) etch pit formation on the sapphire surface will be presented.
Appraisal of transverse nasal groove: a study.
Sathyanarayana, Belagola D; Basavaraj, Halevoor B; Nischal, Kuchangi C; Swaroop, Mukunda R; Umashankar, Puttagangu N; Agrawal, Dhruv P; Swamy, Suchetha S; Okram, Sarda
2012-01-01
Transverse nasal groove is a condition of cosmetic concern which awaits due recognition and has been widely described as a shallow groove that extends transversely over the dorsum of nose. However, we observed variations in the clinical presentations of this entity, hitherto undescribed in literature. We conducted a clinicoepidemiological study of transverse nasal lesions in patients attending our outpatient department. We conducted a prospective observational study. We screened all patients attending our out-patient department for presence of transverse nasal lesions, signs of any dermatosis and associated other skin conditions. One hundred patients were recruited in the study. Females (80%) predominated over males. Most patients were of 15-45 years age group (70%). Majority of the transverse nasal lesions were classical transverse nasal groove (39%) and others included transverse nasal line (28%), strip (28%), ridge (4%) and loop (1%). Seborrhoeic diathesis was the most common condition associated with transverse nasal lesion. Occurrence of transverse nasal line, strip, ridge and loop, in addition to classical transverse nasal groove implies that latter is actually a subset of transverse nasal lesions. Common association of this entity with seborrheic dermatitis, seborrhea and dandruff raises a possibility of whether transverse nasal lesion is a manifestation of seborrheic diathesis.
Gratings Fabricated on Flat Surfaces and Reproduced on Non-Flat Substrates
NASA Technical Reports Server (NTRS)
Content, David; Iazikov, Dmitri; Mossberg, Thomas W.; Greiner, Christopher M.
2009-01-01
A method has been developed for fabricating gratings on flat substrates, and then reproducing the groove pattern on a curved (concave or convex) substrate and a corresponding grating device. First, surface relief diffraction grating grooves are formed on flat substrates. For example, they may be fabricated using photolithography and reactive ion etching, maskless lithography, holography, or mechanical ruling. Then, an imprint of the grating is made on a deformable substrate, such as plastic, polymer, or other materials using thermoforming, hot or cold embossing, or other methods. Interim stamps using electroforming, or other methods, may be produced for the imprinting process or if the same polarity of the grating image is required. The imprinted, deformable substrate is then attached to a curved, rigid substrate using epoxy or other suitable adhesives. The imprinted surface is facing away from the curved rigid substrate. As an alternative fabrication method, after grating is imprinted on the deformable substrate as described above, the grating may be coated with thin conformal conductive layer (for example, using vacuum deposition of gold). Then the membrane may be mounted over an opening in a pressured vessel in a manner of a membrane on a drum, grating side out. The pressure inside of the vessel may be changed with respect to the ambient pressure to produce concave or convex membrane surface. The shape of the opening may control the type of the surface curvature (for example, a circular opening would create spherical surface, oval opening would create toroidal surface, etc.). After that, well-known electroforming methods may be used to create a replica of the grating on the concave or convex membrane. For example, the pressure vessel assembly may be submerged into an electro-forming solution and negative electric potential applied to the metal coated membrane using an insulated wire. Positive electric potential may be then applied to a nickel or other metal
NASA Astrophysics Data System (ADS)
Agarwal, S.; Haseman, M. S.; Leedy, K. D.; Winarski, D. J.; Saadatkia, P.; Doyle, E.; Zhang, L.; Dang, T.; Vasilyev, V. S.; Selim, F. A.
2018-04-01
Titanium oxide (TiO2) is a semiconducting oxide of increasing interest due to its chemical and thermal stability and broad applicability. In this study, thin films of TiO2 were deposited by pulsed laser deposition on sapphire and silicon substrates under various growth conditions, and characterized by x-ray diffraction (XRD), atomic force microscopy (AFM), optical absorption spectroscopy and Hall-effect measurements. XRD patterns revealed that a sapphire substrate is more suitable for the formation of the rutile phase in TiO2, while a silicon substrate yields a pure anatase phase, even at high-temperature growth. AFM images showed that the rutile TiO2 films grown at 805°C on a sapphire substrate have a smoother surface than anatase films grown at 620°C. Optical absorption spectra confirmed the band gap energy of 3.08 eV for the rutile phase and 3.29 eV for the anatase phase. All the deposited films exhibited the usual high resistivity of TiO2; however, when employed as a buffer layer, anatase TiO2 deposited on sapphire significantly improves the conductivity of indium gallium zinc oxide thin films. The study illustrates how to control the formation of TiO2 phases and reveals another interesting application for TiO2 as a buffer layer for transparent conducting oxides.
NASA Astrophysics Data System (ADS)
Zhou, Shengjun; Hu, Hongpo; Liu, Xingtong; Liu, Mengling; Ding, Xinghuo; Gui, Chengqun; Liu, Sheng; Guo, L. Jay
2017-11-01
GaN-based ultraviolet-light-emitting diodes (UV LEDs) with 375 nm emission were grown on different-sized patterned sapphire substrates (PSSs) with ex situ 15-nm-thick sputtered AlN nucleation layers by metal-organic chemical vapor deposition (MOCVD). It was observed through in situ optical reflectance monitoring that the transition time from a three-dimensional (3D) island to a two-dimensional (2D) coalescence was prolonged when GaN was grown on a larger PSS, owing to a much longer lateral growth time of GaN. The full widths at half-maximum (FWHMs) of symmetric GaN(002) and asymmetric GaN(102) X-ray diffraction (XRD) rocking curves decreased as the PSS size increased. By cross-sectional transmission electron microscopy (TEM) analysis, it was found that the threading dislocation (TD) density in UV LEDs decreased with increasing pattern size and fill factor of the PSS, thereby resulting in a marked improvement in internal quantum efficiency (IQE). Finite-difference time-domain (FDTD) simulations quantitatively demonstrated a progressive decrease in light extraction efficiency (LEE) as the PSS size increased. However, owing to the significantly reduced TD density in InGaN/AlInGaN multiple quantum wells (MQWs) and thus improved IQE, the light output power of the UV LED grown on a large PSS with a fill factor of 0.71 was 131.8% higher than that of the UV LED grown on a small PSS with a fill factor of 0.4, albeit the UV LED grown on a large PSS exhibited a much lower LEE.
Design of well and groove microchannel bioreactors for cell culture.
Korin, Natanel; Bransky, Avishay; Khoury, Maria; Dinnar, Uri; Levenberg, Shulamit
2009-03-01
Microfluidic bioreactors have been shown valuable for various cellular applications. The use of micro-wells/grooves bioreactors, in which micro-topographical features are used to protect sensitive cells from the detrimental effects of fluidic shear stress, is a promising approach to culture sensitive cells in these perfusion microsystems. However, such devices exhibit substantially different fluid dynamics and mass transport characteristics compared to conventional planar microchannel reactors. In order to properly design and optimize these systems, fluid and mass transport issues playing a key role in microscale bioreactors should be adequately addressed. The present work is a parametric study of micro-groove/micro-well microchannel bioreactors. Operation conditions and design parameters were theoretically examined via a numerical model. The complex flow pattern obtained at grooves of various depths was studied and the shear protection factor compared to planar microchannels was evaluated. 3D flow simulations were preformed in order to examine the shear protection factor in micro-wells, which were found to have similar attributes as the grooves. The oxygen mass transport problem, which is coupled to the fluid mechanics problem, was solved for various groove geometries and for several cell types, assuming a defined shear stress limitation. It is shown that by optimizing the groove depth, the groove bioreactor may be used to effectively maximize the number of cells cultured within it or to minimize the oxygen gradient existing in such devices. Moreover, for sensitive cells having a high oxygen demand (e.g., hepatocytes) or low endurance to shear (e.g., human embryonic stem cells), results show that the use of grooves is an enabling technology, since under the same physical conditions the cells cannot be cultured for long periods of time in a planar microchannel. In addition to the theoretical model findings, the culture of human foreskin fibroblasts in groove (30
TEM00 mode Nd:YAG solar laser by side-pumping a grooved rod
NASA Astrophysics Data System (ADS)
Vistas, Cláudia R.; Liang, Dawei; Almeida, Joana; Guillot, Emmanuel
2016-05-01
A simple TEM00 mode solar laser system with a grooved Nd:YAG rod pumped through a heliostat-parabolic mirror system is reported here. The radiation coupling capacity of a fused silica tube lens was combined with the multipass pumping ability of a 2 V-shaped cavity to provide efficient side-pumping along a 4.0 mm diameter grooved Nd:YAG single-crystal rod. TEM00 mode solar laser power of 3.4 W was measured by adopting an asymmetric large-mode laser resonant cavity. Record TEM00 mode solar laser collection efficiency of 3.4 W/m2and slope efficiency of 1.9% was achieved, which corresponds to 1.8 and 2.4 times more than the previous TEM00 mode Nd:YAG solar laser using the PROMES-CNRS heliostat-parabolic mirror system, respectively.
Effect of type and location of oil groove on the performance of journal bearings
NASA Technical Reports Server (NTRS)
Vijayaraghavan, D.; Keith, T. G., Jr.
1992-01-01
A numerical study is performed of oil groove type (circumferential and axial), groove number (single and double) and groove location on journal bearing performance. The analysis involves the use of a cavitation algorithm. The interaction between cavitation phenomena and grooving is determined. Quantitative information is provided which will aid designers to better locate oil feed grooves.
Boundary conditions at the gas sectors of superhydrophobic grooves
NASA Astrophysics Data System (ADS)
Dubov, Alexander L.; Nizkaya, Tatiana V.; Asmolov, Evgeny S.; Vinogradova, Olga I.
2018-01-01
The hydrodynamics of liquid flowing past gas sectors of unidirectional superhydrophobic surfaces is revisited. Attention is focused on the local slip boundary condition at the liquid-gas interface, which is equivalent to the effect of a gas cavity on liquid flow. The system is characterized by a large viscosity contrast between liquid and gas μ /μg≫1 . We interpret earlier results, namely, the dependence of the local slip length on the flow direction, in terms of a tensorial local slip boundary condition and relate the eigenvalues of the local local slip tensor to the texture parameters, such as the width of the groove δ and the local depth of the groove e (y ,α ) . The latter varies in the direction y , orthogonal to the orientation of stripes, and depends on the bevel angle of the groove's edges, π /2 -α , at the point where three phases meet. Our theory demonstrates that when grooves are sufficiently deep their eigenvalues of the local slip length tensor depend only on μ /μg ,δ , and α , but not on the depth. The eigenvalues of the local slip length of shallow grooves depend on μ /μg and e (y ,α ) , although the contribution of the bevel angle is moderate. In order to assess the validity of our theory we propose an approach to solve the two-phase hydrodynamic problem, which significantly facilitates and accelerates calculations compared to conventional numerical schemes. The numerical results show that our simple analytical description obtained for limiting cases of deep and shallow grooves remains valid for various unidirectional textures.
[A case of groove pancreatitis associated with duodenal ulcer].
Iemoto, Takao; Shiomi, Hideyuki; Masuda, Atsuhiro; Sanuki, Tsuyoshi; Kutsumi, Hiromu; Hayakumo, Takanobu; Shinzeki, Makoto; Matsumoto, Ippei; Ku, Yonson; Kanzawa, Maki; Hara, Shigeo; Azuma, Takeshi
2013-01-01
We describe a 69-year-old man with a history of multiple gastroduodenal ulcers, presenting with the onset of obstructive jaundice. Abdominal CT, MRI and EUS demonstrated a sheet-like mass in the pancreaticoduodenal groove. EUS-FNA did not reveal malignancy. Conservative treatment did not improve his clinical condition and repeated acute pancreatitis occurred during his treatment. Thus, pancreaticoduodenectomy was performed. Histopathological findings showed a duodenal ulcer penetrating the pancreas and infiltration of inflammatory cells and fibrosis in the pancreaticoduodenal groove. The spread of inflammation associated with the duodenal ulcer may have been one of the causes of groove pancreatitis.
Design of pellet surface grooves for fission gas plenum
DOE Office of Scientific and Technical Information (OSTI.GOV)
Carter, T.J.; Jones, L.R.; Macici, N.
1986-01-01
In the Canada deuterium uranium pressurized heavy water reactor, short (50-cm) Zircaloy-4 clad bundles are fueled on-power. Although internal void volume within the fuel rods is adequate for the present once-through natural uranium cycle, the authors have investigated methods for increasing the internal gas storage volume needed in high-power, high-burnup, experimental ceramic fuels. This present work sought to prove the methodology for design of gas storage volume within the fuel pellets - specifically the use of grooves pressed or machined into the relatively cool pellet/cladding interface. Preanalysis and design of pellet groove shape and volume was accomplished using the TRUMPmore » heat transfer code. Postirradiation examination (PIE) was used to check the initial design and heat transfer assumptions. Fission gas release was found to be higher for the grooved pellet rods than for the comparison rods with hollow or unmodified pellets. This had been expected from the initial TRUMP thermal analyses. The ELESIM fuel modeling code was used to check in-reactor performance, but some modifications were necessary to accommodate the loss of heat transfer surface to the grooves. It was concluded that for plenum design purposes, circumferential pellet grooves could be adequately modeled by the codes TRUMP and ELESIM.« less
Mark-forming simulations of phase-change land/groove disks
NASA Astrophysics Data System (ADS)
Nishi, Yoshiko; Shimano, Takeshi; Kando, Hidehiko
2000-09-01
The track pitches of optical discs have become so narrow that it is comparable to the wavelength of laser beam. Finite-difference time-domain (FDTD) simulation, based on vector diffraction analysis, can predict the propagation of light more accurately than scalar analysis, when the size of media texture becomes sub-micron order. The authors applied FDTD simulation to land-and-groove optical disc models, and found out that the effects of 3D geometry is not negligible in analyzing the energy absorption of light inside the land- and-groove multi-layered media. The electromagnetic field in the media does not have the same intensity distribution as the incident beam. Furthermore, the heat conduction inside the media depends on the disc geometry, so the beam spots centered on land and groove makes different effects in heating the recording layers. That is, the spatial and historical profile of temperature requires 3D analysis for both incident light absorption and heat conduction. The difference in temperature profiles is applied to the phase change simulator to see the writing process of the marks in land and groove. We have integrated three simulators: FDTD analysis, heat conduction and phase change simulation. These simulators enabled to evaluate the differences in mark forming process between land and groove.
Wet Weather Crater Repair Technologies for Grooved and Smooth Pavements
2018-04-30
test area needed for this project, the PCC slab was grooved by using a walk-behind saw equipped with one diamond saw- cutting blade rather than a...tent. Figure 49 shows the rainwater running off the edge of the tent. Figure 49. Tent water runoff from simulated rain. Figure 50 shows the catch...covered with the tarp. These barriers still left the pavement grooving exposed, so water was able to run freely into the basin from the grooves. The
Sapphire Viewports for a Venus Probe
NASA Technical Reports Server (NTRS)
Bates, Stephen
2012-01-01
A document discusses the creation of a viewport suitable for use on the surface of Venus. These viewports are rated for 500 C and 100 atm pressure with appropriate safety factors and reliability required for incorporation into a Venus Lander. Sapphire windows should easily withstand the chemical, pressure, and temperatures of the Venus surface. Novel fixture designs and seals appropriate to the environment are incorporated, as are materials compatible with exploration vessels. A test cell was fabricated, tested, and leak rate measured. The window features polish specification of the sides and corners, soft metal padding of the sapphire, and a metal C-ring seal. The system safety factor is greater than 2, and standard mechanical design theory was used to size the window, flange, and attachment bolts using available material property data. Maintenance involves simple cleaning of the window aperture surfaces. The only weakness of the system is its moderate rather than low leak rate for vacuum applications.
Modified Kelvin Equations for Capillary Condensation in Narrow and Wide Grooves
NASA Astrophysics Data System (ADS)
Malijevský, Alexandr; Parry, Andrew O.
2018-03-01
We consider the location and order of capillary condensation transitions occurring in deep grooves of width L and depth D . For walls that are completely wet by liquid (contact angle θ =0 ) the transition is continuous and its location is not sensitive to the depth of the groove. However, for walls that are partially wet by liquid, where the transition is first order, we show that the pressure at which it occurs is determined by a modified Kelvin equation characterized by an edge contact angle θE describing the shape of the meniscus formed at the top of the groove. The dependence of θE on the groove depth D relies, in turn, on whether corner menisci are formed at the bottom of the groove in the low density gaslike phase. While for macroscopically wide grooves these are always present when θ <45 ° we argue that their formation is inhibited in narrow grooves. This has a number of implications including that the local pinning of the meniscus and location of the condensation transition is different depending on whether the contact angle is greater or less than a universal value θ*≈31 °. Our arguments are supported by detailed microscopic density functional theory calculations that show that the modified Kelvin equation remains highly accurate even when L and D are of the order of tens of molecular diameters.
Osteochondritis Dissecans Involving the Trochlear Groove Treated With Retrograde Drilling
Kaji, Yoshio; Nakamura, Osamu; Yamaguchi, Konosuke; Yamamoto, Tetsuji
2015-01-01
Abstract Osteochondritis dissecans (OCD) occurs frequently in the humeral capitellum of the upper extremity, whereas OCD involving the trochlear groove (trochlear groove OCD) is rarely reported. A standard treatment for trochlear groove OCD has therefore not been determined, although several methods have been tried. The case of a 14-year-old male gymnast with bilateral trochlear groove OCD is presented. Retrograde drilling from the lateral condyle of the humerus was applied for the OCD lesion of the left elbow, since it was larger in size than that in the right elbow and was symptomatic. Conversely, since the right lesion was small and asymptomatic, it was managed conservatively. After treatment, consolidation of the OCD lesions was observed in both elbows. However, the time to healing was shorter in the left elbow treated surgically than in the right elbow managed conservatively. In conclusion, retrograde drilling is a very simple and minimally invasive treatment. This case suggests that retrograde drilling for trochlear groove OCD may be a useful procedure that may accelerate the healing process for OCD lesions. PMID:26356703
Infiltration of Slag Film into the Grooves on a Continuous Casting Mold
NASA Astrophysics Data System (ADS)
Cho, Jung-Wook; Jeong, Hee-Tae
2013-02-01
An analytical model is developed to clarify the slag film infiltration into grooves on a copper mold during the continuous casting of steel slabs. A grooved-type casting mold was applied to investigate the infiltration of slag film into the grooves of a pitch of 0.8 mm, width of 0.7 mm, and depth of 0.6 mm at the vicinity of a meniscus. The plant trial tests were carried out at a casting speed of 5.5 m min-1. The slag film captured at a commercial thin slab casting plant showed that both the overall and the liquid film thickness were decreased exponentially as the distance from the meniscus increases. In contrast, the infiltration of slag film into the grooves had been increased with increasing distance from the meniscus. A theoretic model has been derived based on the measured profile of slag film thickness to calculate the infiltration of slag film into the grooves. It successfully reproduces the empirical observation that infiltration ratio increased sharply along casting direction, about 80 pct at 50 mm and 95 pct at 150 mm below the meniscus. In the model calculation, the infiltration of slag film increases with increasing groove width and/or surface tension of the slag. The effect of groove depth is negligible when the width to depth ratio of the groove is larger than unity. It is expected that the developed model for slag film infiltration in this study will be widely utilized to optimize the design of groove dimensions in continuous casting molds.
[Evaluation of the Abbott Cell-Dyn Sapphire hematology analyzer].
Park, Younhee; Song, Jaewoo; Song, Sungwook; Song, Kyung Soon; Ahn, Mee Suk; Yang, Mi-Sook; Kim, Il; Choi, Jong Rak
2007-06-01
The performance of Cell-Dyn Sapphire (Abbott Diagnostic, USA) was compared to the Bayer Advia 2120 (Bayer Diagnostics, USA), Sysmex XE-2100 (Sysmex Corporation, Japan), and reference microscopy. Three hundred samples for routine CBC and WBC differentials were randomly chosen for a comparison analysis. The Cell-Dyn Sapphire system was evaluated according to the linearity, imprecision, inter-instrument correlations, and white blood cell differential. The CBC parameters (WBC, RBC, hemoglobin and platelet) showed a significant linearity with correlation coefficients greater than 0.99 (P<0.0001). Coefficients of variation (CV) for within-run and differential count of WBC were less than 5% except for Total CV for monocytes, eosinophils, and basophils and within-run CV for low valued eosinophils. The correlation coefficients with manual count were lower in monocytes, eosinophils, and basophils than in neutrophils and lymphocytes. The correlation with other hematology anlayzers was significant exclusive of basophils. These results demonstrate that the Cell-Dyn Sapphire has a good linearity, an acceptable reproducibility, a minimal carryover, and a comparable performance with the sysmex XE-2100 and Advia 2120.
Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure
NASA Technical Reports Server (NTRS)
Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)
2017-01-01
An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
Integrated Multi-Color Light Emitting Device Made with Hybrid Crystal Structure
NASA Technical Reports Server (NTRS)
Park, Yeonjoon (Inventor); Choi, Sang Hyouk (Inventor)
2016-01-01
An integrated hybrid crystal Light Emitting Diode ("LED") display device that may emit red, green, and blue colors on a single wafer. The various embodiments may provide double-sided hetero crystal growth with hexagonal wurtzite III-Nitride compound semiconductor on one side of (0001) c-plane sapphire media and cubic zinc-blended III-V or II-VI compound semiconductor on the opposite side of c-plane sapphire media. The c-plane sapphire media may be a bulk single crystalline c-plane sapphire wafer, a thin free standing c-plane sapphire layer, or crack-and-bonded c-plane sapphire layer on any substrate. The bandgap energies and lattice constants of the compound semiconductor alloys may be changed by mixing different amounts of ingredients of the same group into the compound semiconductor. The bandgap energy and lattice constant may be engineered by changing the alloy composition within the cubic group IV, group III-V, and group II-VI semiconductors and within the hexagonal III-Nitrides.
Syncopation, body-movement and pleasure in groove music.
Witek, Maria A G; Clarke, Eric F; Wallentin, Mikkel; Kringelbach, Morten L; Vuust, Peter
2014-01-01
Moving to music is an essential human pleasure particularly related to musical groove. Structurally, music associated with groove is often characterised by rhythmic complexity in the form of syncopation, frequently observed in musical styles such as funk, hip-hop and electronic dance music. Structural complexity has been related to positive affect in music more broadly, but the function of syncopation in eliciting pleasure and body-movement in groove is unknown. Here we report results from a web-based survey which investigated the relationship between syncopation and ratings of wanting to move and experienced pleasure. Participants heard funk drum-breaks with varying degrees of syncopation and audio entropy, and rated the extent to which the drum-breaks made them want to move and how much pleasure they experienced. While entropy was found to be a poor predictor of wanting to move and pleasure, the results showed that medium degrees of syncopation elicited the most desire to move and the most pleasure, particularly for participants who enjoy dancing to music. Hence, there is an inverted U-shaped relationship between syncopation, body-movement and pleasure, and syncopation seems to be an important structural factor in embodied and affective responses to groove.
Chen, Yujin; Lin, Yanfu; Huang, Jianhua; Gong, Xinghong; Luo, Zundu; Huang, Yidong
2018-01-08
A composite crystal consisting of a 1.5-mm-thick Er:Yb:YAl 3 (BO 3 ) 4 crystal between two 1.2-mm-thick sapphire crystals was fabricated by the thermal diffusion bonding technique. Compared with a lone Er:Yb:YAl 3 (BO 3 ) 4 crystal measured under the identical experimental conditions, higher laser performances were demonstrated in the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal due to the reduction of the thermal effects. End-pumped by a 976 nm laser diode in a hemispherical cavity, a 1.55 μm continuous-wave laser with a maximum output power of 1.75 W and a slope efficiency of 36% was obtained in the composite crystal when the incident pump power was 6.54 W. Passively Q-switched by a Co 2+ :MgAl 2 O 4 crystal, a 1.52 μm pulse laser with energy of 10 μJ and repetition frequency of 105 kHz was also realized in the composite crystal. Pulse width was 315 ns. The results show that the sapphire/Er:Yb:YAl 3 (BO 3 ) 4 /sapphire composite crystal is an excellent active element for 1.55 μm laser.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Zigler, A.; Palchan, T.; Bruner, N.
We report on the first generation of 5.5-7.5 MeV protons by a moderate-intensity short-pulse laser ({approx}5x10{sup 17} W/cm{sup 2}, 40 fsec) interacting with frozen H{sub 2}O nanometer-size structure droplets (snow nanowires) deposited on a sapphire substrate. In this setup, the laser intensity is locally enhanced by the snow nanowire, leading to high spatial gradients. Accordingly, the nanoplasma is subject to enhanced ponderomotive potential, and confined charge separation is obtained. Electrostatic fields of extremely high intensities are produced over the short scale length, and protons are accelerated to MeV-level energies.
Progress Report for a New Cryogenic Sapphire Oscillator
NASA Technical Reports Server (NTRS)
Wang, Rabi T.; Dick, G. J.; Tjoelker, R. L.
2006-01-01
We present design progress and subsystem test results for a new short-term frequency standard, the Voltage Controlled Sapphire Oscillator (VCSO). Included are sapphire resonator and coupling design, cryocooler environmental sensitivity tests, Q measurement results, and turnover temperature results. A previous report presented history of the design related to resonator frequency and frequency compensation [1]. Performance goals are a frequency stability of 1x10(exp -14) (1 second less than or equal to (tau) less than or equal to 100 seconds) and two years or more continuous operation. Long-term operation and small size are facilitated by use of a small Stirling cryo-cooler (160W wall power) with an expected 5 year life.
Influence of the substrate material on the optical properties of tungsten diselenide monolayers
NASA Astrophysics Data System (ADS)
Lippert, Sina; Schneider, Lorenz Maximilian; Renaud, Dylan; Kang, Kyung Nam; Ajayi, Obafunso; Kuhnert, Jan; Halbich, Marc-Uwe; Abdulmunem, Oday M.; Lin, Xing; Hassoon, Khaleel; Edalati-Boostan, Saeideh; Duck Kim, Young; Heimbrodt, Wolfram; Yang, Eui-Hyeok; Hone, James C.; Rahimi-Iman, Arash
2017-06-01
Monolayers of transition-metal dichalcogenides such as WSe2 have become increasingly attractive due to their potential in electrical and optical applications. Because the properties of these 2D systems are known to be affected by their surroundings, we report how the choice of the substrate material affects the optical properties of monolayer WSe2. To accomplish this study, pump-density-dependent micro-photoluminescence measurements are performed with time-integrating and time-resolving acquisition techniques. Spectral information and power-dependent mode intensities are compared at 290 K and 10 K for exfoliated WSe2 on SiO2/Si, sapphire (Al2O3), hBN/Si3N4/Si, and MgF2, indicating substrate-dependent appearance and strength of exciton, trion, and biexciton modes. Additionally, one CVD-grown WSe2 monolayer on sapphire is included in this study for direct comparison with its exfoliated counterpart. Time-resolved micro-photoluminescence shows how radiative decay times strongly differ for different substrate materials. Our data indicates exciton-exciton annihilation as a shortening mechanism at room temperature, and subtle trends in the decay rates in correlation to the dielectric environment at cryogenic temperatures. On the measureable time scales, trends are also related to the extent of the respective 2D-excitonic modes’ appearance. This result highlights the importance of further detailed characterization of exciton features in 2D materials, particularly with respect to the choice of substrate.
Increased efficiency with surface texturing in ITO/InP solar cells
NASA Technical Reports Server (NTRS)
Jenkins, Phillip; Landis, Geoffrey A.; Fatemi, Navid; Li, Xiaonan; Scheiman, David; Bailey, Sheila
1992-01-01
Optimization of an InP solar cell with a V-grooved surface is discussed. Total internal reflection in the coverglass reduces surface reflection and can recover light reflected from the front metallization. Results from the first ITO/InP solar cells on low-angle V-grooved substrates are presented, showing a 5.8 percent increase in current.
Freestanding ultrathin single-crystalline SiC substrate by MeV H ion-slicing
NASA Astrophysics Data System (ADS)
Jia, Qi; Huang, Kai; You, Tiangui; Yi, Ailun; Lin, Jiajie; Zhang, Shibin; Zhou, Min; Zhang, Bin; Zhang, Bo; Yu, Wenjie; Ou, Xin; Wang, Xi
2018-05-01
SiC is a widely used wide-bandgap semiconductor, and the freestanding ultrathin single-crystalline SiC substrate provides the material platform for advanced devices. Here, we demonstrate the fabrication of a freestanding ultrathin single-crystalline SiC substrate with a thickness of 22 μm by ion slicing using 1.6 MeV H ion implantation. The ion-slicing process performed in the MeV energy range was compared to the conventional case using low-energy H ion implantation in the keV energy range. The blistering behavior of the implanted SiC surface layer depends on both the implantation temperature and the annealing temperature. Due to the different straggling parameter for two implant energies, the distribution of implantation-induced damage is significantly different. The impact of implantation temperature on the high-energy and low-energy slicing was opposite, and the ion-slicing SiC in the MeV range initiates at a much higher temperature.
Yoshida, Hiromi; Yoshihara, Akihide; Ishii, Tomohiko; Izumori, Ken; Kamitori, Shigehiro
2016-12-01
Pseudomonas cichorii D-tagatose 3-epimerase (PcDTE), which has a broad substrate specificity, efficiently catalyzes the epimerization of not only D-tagatose to D-sorbose but also D-fructose to D-psicose (D-allulose) and also recognizes the deoxy sugars as substrates. In an attempt to elucidate the substrate recognition and catalytic reaction mechanisms of PcDTE for deoxy sugars, the X-ray structures of the PcDTE mutant form with the replacement of Cys66 by Ser (PcDTE_C66S) in complexes with deoxy sugars were determined. These X-ray structures showed that substrate recognition by the enzyme at the 1-, 2-, and 3-positions is responsible for enzymatic activity and that substrate-enzyme interactions at the 4-, 5-, and 6-positions are not essential for the catalytic reaction of the enzyme leading to the broad substrate specificity of PcDTE. They also showed that the epimerization site of 1-deoxy 3-keto D-galactitol is shifted from C3 to C4 and that 1-deoxy sugars may bind to the catalytic site in the inhibitor-binding mode. The hydrophobic groove that acts as an accessible surface for substrate binding is formed through the dimerization of PcDTE. In PcDTE_C66S/deoxy sugar complex structures, bound ligand molecules in both the linear and ring forms were detected in the hydrophobic groove, while bound ligand molecules in the catalytic site were in the linear form. This result suggests that the sugar-ring opening of a substrate may occur in the hydrophobic groove and also that the narrow channel of the passageway to the catalytic site allows a substrate in the linear form to pass through.
Champagne Groove Lipectomy: A Safe Technique to Contour the Upper Abdomen in Abdominoplasty.
Brooks, Ron; Nguyen, Jonathan; Chowdhry, Saeed; Tutela, John Paul; Kelishadi, Sean; Yonick, David; Choo, Joshua; Wilhelmi, Bradon J
2017-01-01
Objective: Combined liposuction and abdominoplasty, or lipoabdominoplasty, is particularly helpful in sculpting a more aesthetically pleasing abdominal contour, particularly in the supraumbilical midline groove. This groove, coined the "champagne groove" by one of our patients, is a frequently sought-after attribute by patients. However, liposuction adds time and cost to an already costly abdominoplasty. We sought to create this groove without the addition of liposuction, utilizing what we call a champagne groove lipectomy. This study reports on our champagne groove lipectomy technique and compares our complication rates with those reported in the literature for standard abdominoplasty techniques. Methods: This is a retrospective review of a single surgeon's experience at our institution over a 6-year period (2007-2012). A total of 74 patients undergoing consecutive abdominoplasty were studied, all female nonsmokers. Two groups were recognized: 64 of 74 patients underwent abdominoplasty, partial belt lipectomy, and champagne groove lipectomy, while 10 of 74 patients underwent fleur-de-lis abdominoplasty without champagne groove lipectomy. Results: Overall, 10 of 74 patients (13.5%) suffered some type of complication, which compares favorably with reported rates in the literature. The majority of complications were related to delayed wound healing or superficial wound dehiscence. Among those patients who underwent champagne groove lipectomy, complications occurred in 6 of 64 patients (9.3%), versus 4 of 10 (40%) patients undergoing fleur-de-lis abdominoplasty. Conclusions: Champagne groove lipectomy is a cost-effective alternative to lipoabdominoplasty for achieving an aesthetically pleasing upper midline abdominal contour, with complication rates comparing favorably with those reported in the literature.
Current trends in the management of pediatric patients with perineal groove.
Esposito, Ciro; Giurin, Ida; Savanelli, Antonio; Alicchio, Francesca; Settimi, Alessandro
2011-10-01
Perineal groove is an uncommon congenital anomaly of the perineum, affecting young girls. We report our experience in the treatment of this pathology. Retrospective review of patients operated in our institution for a perineal groove between 1999 and 2007. Multidisciplinary clinic for young girls with perineal groove at the Department of Pediatrics, "Federico II" University, Naples, Italy. Six young girls (aged between 2 and 7 years) with perineal groove. In the first three patients, who were operated on before 2004, the procedure consisted in resecting the groove and closing the perineal defect using interrupted sutures; in the last three, the skin was closed with similar approach and then covered with a chemical glue to impermeabilize and protect the suture. At a long-term follow-up, two of the three patients operated before 2004 experienced dehiscence of the perineal skin due to urine and feces contamination; in the last three patients in whom the sutures were covered with glue there was no skin dehiscence, and the postoperative course was uneventful. A perineal groove is a rare anomaly in young girls. Treatment consists in the surgical excision of the groove, generally after two years of age. On the basis of our experience it is preferable to cover the suture with a chemical glue to impermeabilize the suture line and protect the skin from infections. Copyright © 2011 North American Society for Pediatric and Adolescent Gynecology. Published by Elsevier Inc. All rights reserved.
Documentation of roller-bearing effect on butterfly inspired grooves
NASA Astrophysics Data System (ADS)
Gautam, Sashank; Lang, Amy
2017-11-01
Butterfly wings are covered with scales in a roof shingle pattern which align together to form grooves. The increase or decrease of laminar friction drag depends on the flow orientation to the scales. Flow in the longitudinal direction to the grooves encounters increased surface area which increases the friction drag. However, in the transverse direction, for low Re laminar flow, a single vortex is formed inside each groove and is predicted to remain stable due to the very low Re of the flow in each cavity. These embedded vortices act as roller bearings to the flow above, such that the fluid from the outer boundary layer does not mix with fluid inside the cavities. This leads to a reduction of skin friction drag when compared to a smooth surface. When the cavity flow Re is increased beyond a critical point, the vortex becomes unstable and the low-momentum fluid in the grooves mixes with the outer boundary layer flow, increasing the drag. The objective of this experiment is to determine the critical Re where the embedded vortex transitions from a stable to an unstable state using DPIV. Subsequently, for steady vortex conditions, a comparison of skin friction drag between the grooved and flat plate can show that the butterfly scaled surface can result in sub-laminar friction drag. The National Science Foundation (Grant No. 1335848).
Single crystal growth of submillimeter diameter sapphire tube by the micro-pulling down method
NASA Astrophysics Data System (ADS)
Kamada, Kei; Murakami, Rikito; Kochurikhin, Vladimir V.; Luidmila, Gushchina; Jin Kim, Kyoung; Shoji, Yasuhiro; Yamaji, Akihiro; Kurosawa, Shunsuke; Ohashi, Yuji; Yokota, Yuui; Yoshikawa, Akira
2018-06-01
This paper addresses several aspects of the μ-PD growth technology as applied to submillimeter diameter sapphire tubes for UFD application. The μ-PD method has been successfully adapted for single crystal sapphire tube growth. A compound crucible made possible the growth of single crystal sapphire tube as small as around 0.70-0.72 mm in outer diameter and 0.28-0.29 in inner diameter over 160 mm in length at growth rate of 2-4 mm/min along 〈0 0 1〉 direction. An Ir crucible with a die composed of an equivalent hole and Ir wire was heated by RF coil in N2 atmosphere. The μ-PD method has been successfully adapted for single crystal sapphire tube growth. Grown crystal tube showed good XRC value of 30.2 arcsec.
NASA Astrophysics Data System (ADS)
Pandey, C.; Mahapatra, M. M.
2016-07-01
The martensitic creep-resistant steel designated as ASTM A335 for plate and as P91 for pipe is primarily used for high-temperature and high-pressure applications in steam power plants due to its excellent high-temperature properties such as high creep strength, high thermal conductivity, low thermal expansion, and so on. However, in the case of welded joints of such steels, the presence of an inter-critical heat-affected zone (IC-HAZ) can cause the joint to have lower creep strength than the base metal. In the present study, the effect of post-welding heat treatment (PWHT) and weld groove designs on the overall microstructure and mechanical properties of P91 steel pipe welds produced by the gas tungsten arc welding process was studied. Various regions of welded joints were characterized in detail for hardness and metallographic and tensile properties. Sub-size tensile samples were also tested to evaluate the mechanical properties of the weld metal and heat-affected zone (HAZ) with respect to PWHT. After PWHT, a homogenous microstructure was observed in the HAZ and tensile test fracture samples revealed shifting of the fracture location from the IC-HAZ to the fine-grained heat-affected zone. Before PWHT, the conventional V-grooved welded joints exhibited higher tensile strength compared to the narrow-grooved joints. However, after PWHT, both narrow- and V-grooved joints exhibited similar strength. Fractography of the samples indicates the presence of carbide precipitates such as Cr23C6, VC, and NbC on the fracture surface.
Formation Mechanisms for Spur and Groove Features on Fringing Reefs
NASA Astrophysics Data System (ADS)
Bramante, J. F.; Ashton, A. D.; Perron, J. T.
2016-12-01
Spur and groove systems (SAGs) are ubiquitous morphological features found on fore-reef slopes globally. SAGs consist of parallel, roughly shore-normal ridges of actively growing coral and coralline algae (spurs) separated by offshore-sloping depressions typically carpeted by a veneer of sediment (grooves). Although anecdotal observations and recent statistical analyses have reported correlations between wave exposure and the distribution of SAGs on fore-reef slopes, the physical mechanisms driving SAG formation remain poorly understood. For example, there remains significant debate regarding the importance of coral growth versus bed erosion for SAG formation. Here we investigate a hypothesis that SAG formation is controlled by feedbacks between sediment production and diffusion and coral growth. Using linear stability analysis, we find that sediment production, coral growth, and the feedbacks between them are unable to produce stable periodic structures without a sediment sink. However, if incipient grooves act as conduits for sediment transport offshore, a positive feedback can develop as the groove bed erodes through wave-driven abrasion during offshore transport. Eventually a negative feedback slows groove deepening when the groove bed is armored by sediment, and the groove bed relaxes to a sediment-veneered equilibrium profile analogous to sediment-rich shorefaces. To test this hypothesis, we apply a numerical model that incorporates coral growth and sediment production, sediment diffusion, non-linear wave-driven abrasion, and sediment advection offshore. This model produces the periodic, linear features characteristic of SAG morphology. The relative magnitude of growth, production, diffusion, abrasion, and advection rates affect periodic spacing or wavelength of the modeled SAGs. Finally, we evaluate the ability of the model to replicate geographical variability in SAG characteristics using previously published datasets and reanalysis wave data.
Combined endodontic-periodontic treatment of a palatal groove: a case report.
Schwartz, Scott A; Koch, Michael A; Deas, David E; Powell, Charles A
2006-06-01
The palatal groove is a developmental anomaly that predisposes the tooth involved to a severe periodontal defect. When further complicated by pulp necrosis, these grooves often present a diagnostic and treatment planning challenge that requires an interdisciplinary treatment approach. This case report describes the successful collaborative management of a maxillary lateral incisor with an extensive palatal groove using a combination of nonsurgical endodontic therapy, odontoplasty, and periodontal regenerative techniques.
NASA Astrophysics Data System (ADS)
Guillong, M.; Günther, D.
2001-07-01
A homogenized 193 nm excimer laser with a flat-top beam profile was used to study the capabilities of LA-ICP-MS for 'quasi' non-destructive fingerprinting and sourcing of sapphires from different locations. Sapphires contain 97-99% of Al 2O 3 (corundum), with the remainder composed of several trace elements, which can be used to distinguish the origin of these gemstones. The ablation behavior of sapphires, as well as the minimum quantity of sample removal that is required to determine these trace elements, was investigated. The optimum ablation conditions were a fluency of 6 J cm -2, a crater diameter of 120 μm, and a laser repetition rate of 10 Hz. The optimum time for the ablation was determined to be 2 s, equivalent to 20 laser pulses. The mean sample removal was 60 nm per pulse (approx. 3 ng per pulse). This allowed satisfactory trace element determination, and was found to cause the minimum amount of damage, while allowing for the fingerprinting of sapphires. More than 40 isotopes were measured using different spatial resolutions (20-120 μm) and eight elements were reproducibly detected in 25 sapphire samples from five different locations. The reproducibility of the trace element distribution is limited by the heterogeneity of the sample. The mean of five or more replicate analyses per sample was used. Calibration was carried out using NIST 612 glass reference material as external standard. The linear dynamic range of the ICP-MS (nine orders of magnitude) allowed the use of Al, the major element in sapphire, as an internal standard. The limits of detection for most of the light elements were in the μg g -1 range and were better for heavier elements (mass >85), being in the 0.1 μg g -1 range. The accuracy of the determinations was demonstrated by comparison with XRF analyses of the same set of samples. Using the quantitative analyses obtained using LA-ICP-MS, natural sapphires from five different origins were statistically classified using ternary plots and
Syncopation, Body-Movement and Pleasure in Groove Music
Witek, Maria A. G.; Clarke, Eric F.; Wallentin, Mikkel; Kringelbach, Morten L.; Vuust, Peter
2014-01-01
Moving to music is an essential human pleasure particularly related to musical groove. Structurally, music associated with groove is often characterised by rhythmic complexity in the form of syncopation, frequently observed in musical styles such as funk, hip-hop and electronic dance music. Structural complexity has been related to positive affect in music more broadly, but the function of syncopation in eliciting pleasure and body-movement in groove is unknown. Here we report results from a web-based survey which investigated the relationship between syncopation and ratings of wanting to move and experienced pleasure. Participants heard funk drum-breaks with varying degrees of syncopation and audio entropy, and rated the extent to which the drum-breaks made them want to move and how much pleasure they experienced. While entropy was found to be a poor predictor of wanting to move and pleasure, the results showed that medium degrees of syncopation elicited the most desire to move and the most pleasure, particularly for participants who enjoy dancing to music. Hence, there is an inverted U-shaped relationship between syncopation, body-movement and pleasure, and syncopation seems to be an important structural factor in embodied and affective responses to groove. PMID:24740381
Numerical investigation of a centrifugal compressor with circumferential grooves in vane diffuser
NASA Astrophysics Data System (ADS)
Chen, X. F.; Qin, G. L.; Ai, Z. J.
2015-08-01
Enhancing stall and surge margin has a great importance for the development of turbo compressors. The application of casing treatment is an effective measure to expand the stall margin and stable operation range. Numerical investigations were conducted to predict the performance of a low flow rate centrifugal compressor with circumferential groove casing treatment in vane diffuser. Numerical cases with different radial location, radial width and axial depth of a circumferential single groove and different numbers of circumferential grooves were carried out to compare the results. The CFD analyses results show that the centrifugal compressor with circumferential grooves in diffuser can extend stable range by about 9% while the efficiency over the whole operating range decreases by 0.2 to 1.7%. The evaluation based on stall margin improvement showed the optimal position for the groove to be located was indicated to exist near the leading edge of the diffuser, and a combination of position, width, depth and numbers of circumferential grooves that will maximize both surge margin range and efficiency.
Deep-UV sensors based on SAW oscillators using low-temperature-grown AlN films on sapphires.
Laksana, Chipta; Chen, Meei-Ru; Liang, Yen; Tzou, An-Jyeg; Kao, Hui-Ling; Jeng, Erik; Chen, Jyh; Chen, Hou-Guang; Jian, Sheng-Rui
2011-08-01
High-quality epitaxial AlN films were deposited on sapphire substrates at low growth temperature using a helicon sputtering system. SAW filters fabricated on the AlN films exhibited excellent characteristics, with center frequency of 354.2 MHz, which corresponds to a phase velocity of 5667 m/s. An oscillator fabricated using AlN-based SAW devices is presented and applied to deep-UV light detection. A frequency downshift of about 43 KHz was observed when the surface of SAW device was illuminated by a UV source with dominant wavelength of around 200 nm. The results indicate the feasibility of developing remote sensors for deep-UV measurement using AlN-based SAW oscillators.
α-Al2O3/Ga2O3 superlattices coherently grown on r-plane sapphire
NASA Astrophysics Data System (ADS)
Oshima, Takayoshi; Kato, Yuji; Imura, Masataka; Nakayama, Yoshiko; Takeguchi, Masaki
2018-06-01
Ten-period binary α-Al2O3/Ga2O3 superlattices were fabricated on r-plane sapphire substrates by molecular beam epitaxy. By systematic variation of α-Ga2O3 thickness and evaluation through X-ray reflectivity and diffraction measurements and scanning transmission electron microscopy, we verified that the superlattice with α-Ga2O3 thickness up to ∼1 nm had coherent interfaces without misfit dislocation in spite of the large lattice mismatches. This successful fabrication of coherent α-Al2O3/Ga2O3 superlattices will encourage further development of α-(Al x Ga1‑ x )2O3-based heterostructures including superlattices.
Grooved Terrain on Ganymede: First Results from Galileo High-Resolution Imaging
Pappalardo, R.T.; Head, J.W.; Collins, G.C.; Kirk, R.L.; Neukum, G.; Oberst, J.; Giese, B.; Greeley, R.; Chapman, C.R.; Helfenstein, P.; Moore, Johnnie N.; McEwen, A.; Tufts, B.R.; Senske, D.A.; Herbert, Breneman H.; Klaasen, K.
1998-01-01
High-resolution Galileo imaging has provided important insight into the origin and evolution of grooved terrain on Ganymede. The Uruk Sulcus target site was the first imaged at high resolution, and considerations of resolution, viewing geometry, low image compression, and complementary stereo imaging make this region extremely informative. Contrast variations in these low-incidence angle images are extreme and give the visual impression of topographic shading. However, photometric analysis shows that the scene must owe its character to albedo variations. A close correlation of albedo variations to topography is demonstrated by limited stereo coverage, allowing extrapolation of the observed brightness and topographic relationships to the rest of the imaged area. Distinct geological units are apparent across the region, and ridges and grooves are ubiquitous within these units. The stratigraphically lowest and most heavily cratered units ("lineated grooved terrain") generally show morphologies indicative of horst-and-graben-style normal faulting. The stratigraphically highest groove lanes ("parallel ridged terrain") exhibit ridges of roughly triangular cross section, suggesting that tilt-block-style normal faulting has shaped them. These extensional-tectonic models are supported by crosscutting relationships at the margins of groove lanes. Thus, a change in tectonic style with time is suggested in the Uruk Sulcus region, varying from horst and graben faulting for the oldest grooved terrain units to tilt block normal faulting for the latest units. The morphologies and geometries of some stratigraphically high units indicate that a strike-slip component of deformation has played an important role in shaping this region of grooved terrain. The most recent tectonic episode is interpreted as right-lateral transtension, with its tectonic pattern of two contemporaneous structural orientations superimposed on older units of grooved terrain. There is little direct evidence for
Champagne Groove Lipectomy: A Safe Technique to Contour the Upper Abdomen in Abdominoplasty
Brooks, Ron; Chowdhry, Saeed; Tutela, John Paul; Kelishadi, Sean; Yonick, David; Choo, Joshua; Wilhelmi, Bradon J.
2017-01-01
Objective: Combined liposuction and abdominoplasty, or lipoabdominoplasty, is particularly helpful in sculpting a more aesthetically pleasing abdominal contour, particularly in the supraumbilical midline groove. This groove, coined the “champagne groove” by one of our patients, is a frequently sought-after attribute by patients. However, liposuction adds time and cost to an already costly abdominoplasty. We sought to create this groove without the addition of liposuction, utilizing what we call a champagne groove lipectomy. This study reports on our champagne groove lipectomy technique and compares our complication rates with those reported in the literature for standard abdominoplasty techniques. Methods: This is a retrospective review of a single surgeon's experience at our institution over a 6-year period (2007-2012). A total of 74 patients undergoing consecutive abdominoplasty were studied, all female nonsmokers. Two groups were recognized: 64 of 74 patients underwent abdominoplasty, partial belt lipectomy, and champagne groove lipectomy, while 10 of 74 patients underwent fleur-de-lis abdominoplasty without champagne groove lipectomy. Results: Overall, 10 of 74 patients (13.5%) suffered some type of complication, which compares favorably with reported rates in the literature. The majority of complications were related to delayed wound healing or superficial wound dehiscence. Among those patients who underwent champagne groove lipectomy, complications occurred in 6 of 64 patients (9.3%), versus 4 of 10 (40%) patients undergoing fleur-de-lis abdominoplasty. Conclusions: Champagne groove lipectomy is a cost-effective alternative to lipoabdominoplasty for achieving an aesthetically pleasing upper midline abdominal contour, with complication rates comparing favorably with those reported in the literature. PMID:28293334
Study of Mastoid Canals and Grooves in North Karnataka Human Skulls
Hadimani, Gavishiddappa Andanappa; Bagoji, Ishwar Basavantappa
2013-01-01
Introduction: This study was undertaken to observe the frequency of mastoid canals and grooves in north Karnataka dry human skulls. 100 dry human skulls of unknown age and sex from the department of Anatomy were selected and observed for the present study. Material and Methods: The mastoid regions of dry skulls were observed for the presence of mastoid canals and grooves, if any. A metallic wire was passed through the canal for its confirmation and then the length was measured. Results: The Mastoid canals were present in 53% of the total 100 skulls observed either bilaterally or unilaterally. Mastoid grooves were present in 18% of the total skulls (100) observed. Double mastoid canal was found in 01% of total skull studied and both Mastoid canals & Mastoid grooves together were present in 02% of the total skulls (100) observed. Conclusion: The knowledge of mastoid canals and grooves is very important for otolaryngologists and neurosurgeons. Because they contain an arterial branch of occipital artery with its accompanying vein which is liable to injury resulting into severe bleeding. PMID:24086832
Study of mastoid canals and grooves in north karnataka human skulls.
Hadimani, Gavishiddappa Andanappa; Bagoji, Ishwar Basavantappa
2013-08-01
This study was undertaken to observe the frequency of mastoid canals and grooves in north Karnataka dry human skulls. 100 dry human skulls of unknown age and sex from the department of Anatomy were selected and observed for the present study. The mastoid regions of dry skulls were observed for the presence of mastoid canals and grooves, if any. A metallic wire was passed through the canal for its confirmation and then the length was measured. The Mastoid canals were present in 53% of the total 100 skulls observed either bilaterally or unilaterally. Mastoid grooves were present in 18% of the total skulls (100) observed. Double mastoid canal was found in 01% of total skull studied and both Mastoid canals & Mastoid grooves together were present in 02% of the total skulls (100) observed. The knowledge of mastoid canals and grooves is very important for otolaryngologists and neurosurgeons. Because they contain an arterial branch of occipital artery with its accompanying vein which is liable to injury resulting into severe bleeding.
Miranda Fractures, Grooves and Craters
1996-01-29
This image of the Uranian moon, Miranda, was taken Jan 24, 1986 by NASA's Voyager 2. This image reveals a bewildering variety of fractures, grooves and craters, as well as features of different albedos reflectancea. http://photojournal.jpl.nasa.gov/catalog/PIA00140
NASA Astrophysics Data System (ADS)
Miyagawa, Chihiro; Kobayashi, Takumi; Taishi, Toshinori; Hoshikawa, Keigo
2014-09-01
Based on the growth of 3-inch diameter c-axis sapphire using the vertical Bridgman (VB) technique, numerical simulations were made and used to guide the growth of a 6-inch diameter sapphire. A 2D model of the VB hot-zone was constructed, the seeding interface shape of the 3-inch diameter sapphire as revealed by green laser scattering was estimated numerically, and the temperature distributions of two VB hot-zone models designed for 6-inch diameter sapphire growth were numerically simulated to achieve the optimal growth of large crystals. The hot-zone model with one heater was selected and prepared, and 6-inch diameter c-axis sapphire boules were actually grown, as predicted by the numerical results.
Fluidic Grooves on Doped-Ice Surface as Size-Tunable Channels
Inagawa, Arinori; Harada, Makoto; Okada, Tetsuo
2015-01-01
We propose a new principle for fabrication of size-tunable fluidic nano- and microchannels with a ubiquitous green material, water. Grooves filled with a solution are spontaneously formed on the surface of ice when an appropriate dopant is incorporated. Sucrose doping allows the development of grooves with lengths of 300 μm along the boundaries of ice crystal grains. This paper focuses on controlling the size of the liquid-filled groove and reveals its applicability to size-selective differentiation of nano- and micromaterials. The width of this groove can be varied in a range of 200 nm to 4 μm by adjusting the working temperature of the frozen platform. The channel dimension is reproducible as long as the same frozen condition is employed. We demonstrate the size-selective entrapment of particles as well as the state evaluation of DNA by controlling the physical interference of the ice wall with the electrophoretic migration of particles. PMID:26601703
Fluidic Grooves on Doped-Ice Surface as Size-Tunable Channels
NASA Astrophysics Data System (ADS)
Inagawa, Arinori; Harada, Makoto; Okada, Tetsuo
2015-11-01
We propose a new principle for fabrication of size-tunable fluidic nano- and microchannels with a ubiquitous green material, water. Grooves filled with a solution are spontaneously formed on the surface of ice when an appropriate dopant is incorporated. Sucrose doping allows the development of grooves with lengths of 300 μm along the boundaries of ice crystal grains. This paper focuses on controlling the size of the liquid-filled groove and reveals its applicability to size-selective differentiation of nano- and micromaterials. The width of this groove can be varied in a range of 200 nm to 4 μm by adjusting the working temperature of the frozen platform. The channel dimension is reproducible as long as the same frozen condition is employed. We demonstrate the size-selective entrapment of particles as well as the state evaluation of DNA by controlling the physical interference of the ice wall with the electrophoretic migration of particles.
276 nm Substrate-Free Flip-Chip AlGaN Light-Emitting Diodes
NASA Astrophysics Data System (ADS)
Hwang, Seongmo; Morgan, Daniel; Kesler, Amanda; Lachab, Mohamed; Zhang, Bin; Heidari, Ahmad; Nazir, Haseeb; Ahmad, Iftikhar; Dion, Joe; Fareed, Qhalid; Adivarahan, Vinod; Islam, Monirul; Khan, Asif
2011-03-01
Lateral-conduction, substrate-free flip-chip (SFFC) light-emitting diodes (LEDs) with peak emission at 276 nm are demonstrated for the first time. The AlGaN multiple quantum well LED structures were grown by metal-organic chemical vapor deposition (MOCVD) on thick-AlN laterally overgrown on sapphire substrates. To fabricate the SFFC LEDs, a newly-developed laser-assisted ablation process was employed to separate the substrate from the LED chips. The chips had physical dimensions of 1100×900 µm2, and were comprised of four devices each with a 100×100 µm2 junction area. Electrical and optical characterization of the devices revealed no noticeable degradation to their performance due to the laser-lift-off process.
Fabrication of Monolithic Sapphire Membranes for High T(sub c) Bolometer Array Development
NASA Technical Reports Server (NTRS)
Pugel, D. E.; Lakew, B.; Aslam, S.; Wang, L.
2004-01-01
This paper examines the effectiveness of Pt/Cr thin film masks for the architecture of monolithic membrane structures in r-plane single crystal sapphire. The development of a pinhole-free Pt/Cr composite mask that is resistant to boiling H2SO4:H3PO4 etchant will lead to the fabrication of smooth sapphire membranes whose surfaces are well-suited for the growth of low-noise high Tc films. In particular, the relationship of thermal annealing conditions on the Pt/Cr composite mask system to: (1) changes in the surface morphology (2) elemental concentration of the Pt/Cr thin film layers and (3) etch pit formation on the sapphire surface will be presented.
Flow dynamics of a spiral-groove dry-gas seal
NASA Astrophysics Data System (ADS)
Wang, Bing; Zhang, Huiqiang; Cao, Hongjun
2013-01-01
The dry-gas seal has been widely used in different industries. With increased spin speed of the rotator shaft, turbulence occurs in the gas film between the stator and rotor seal faces. For the micro-scale flow in the gas film and grooves, turbulence can change the pressure distribution of the gas film. Hence, the seal performance is influenced. However, turbulence effects and methods for their evaluation are not considered in the existing industrial designs of dry-gas seal. The present paper numerically obtains the turbulent flow fields of a spiral-groove dry-gas seal to analyze turbulence effects on seal performance. The direct numerical simulation (DNS) and Reynolds-averaged Navier-Stokes (RANS) methods are utilized to predict the velocity field properties in the grooves and gas film. The key performance parameter, open force, is obtained by integrating the pressure distribution, and the obtained result is in good agreement with the experimental data of other researchers. Very large velocity gradients are found in the sealing gas film because of the geometrical effects of the grooves. Considering turbulence effects, the calculation results show that both the gas film pressure and open force decrease. The RANS method underestimates the performance, compared with the DNS. The solution of the conventional Reynolds lubrication equation without turbulence effects suffers from significant calculation errors and a small application scope. The present study helps elucidate the physical mechanism of the hydrodynamic effects of grooves for improving and optimizing the industrial design or seal face pattern of a dry-gas seal.
Laser etching of groove structures with micro-optical fiber-enhanced irradiation
2012-01-01
A microfiber is used as a laser-focusing unit to fabricate a groove structure on TiAlSiN surfaces. After one laser pulse etching, a groove with the minimum width of 265 nm is manufactured at the area. This technique of microfabricating the groove in microscale is studied. Based on the near-field intensity enhancement at the contact area between the fiber and the surface during the laser irradiation, simulation results are also presented, which agree well with the experimental results. PMID:22713521
Wang, Zhuo; Dong, Zhaogang; Zhu, Hai; Jin, Lei; Chiu, Ming-Hui; Li, Lain-Jong; Xu, Qing-Hua; Eda, Goki; Maier, Stefan A; Wee, Andrew T S; Qiu, Cheng-Wei; Yang, Joel K W
2018-02-27
Monolayer two-dimensional transition-metal dichalcogenides (2D TMDCs) exhibit promising characteristics in miniaturized nonlinear optical frequency converters, due to their inversion asymmetry and large second-order nonlinear susceptibility. However, these materials usually have very short light interaction lengths with the pump laser because they are atomically thin, such that second-harmonic generation (SHG) is generally inefficient. In this paper, we fabricate a judiciously structured 150 nm-thick planar surface consisting of monolayer tungsten diselenide and sub-20 nm-wide gold trenches on flexible substrates, reporting ∼7000-fold SHG enhancement without peak broadening or background in the spectra as compared to WSe 2 on as-grown sapphire substrates. Our proof-of-concept experiment yields effective second-order nonlinear susceptibility of 2.1 × 10 4 pm/V. Three orders of magnitude enhancement is maintained with pump wavelength ranging from 800 to 900 nm, breaking the limitation of narrow pump wavelength range for cavity-enhanced SHG. In addition, SHG amplitude can be dynamically controlled via selective excitation of the lateral gap plasmon by rotating the laser polarization. Such a fully open, flat, and ultrathin profile enables a great variety of functional samples with high SHG from one patterned silicon substrate, favoring scalable production of nonlinear converters. The surface accessibility also enables integration with other optical components for information processing in an ultrathin and flexible form.
Viscous dewetting of metastable liquid films on substrates with microgrooves.
Kim, Taehong; Kim, Wonjung
2018-06-15
We present a combined experimental and theoretical investigation of dewetting on substrates with parallel microgrooves. A thin, static liquid film has an equilibrium thickness so as to minimize the sum of the surface free energy and the gravitational potential energy. When the thickness of a liquid film is less than the equilibrium thickness, the film seeks the equilibrium through contraction of the wetted area, which is referred to as dewetting. We experimentally observed the dewetting of thin, metastable liquid films on substrates with parallel microgrooves. The experiments revealed that the films retract in the direction along the grooves and leaves liquid residues with various morphologies. We classify the residue morphologies into three modes and elucidate the dependence of the mode selection on the groove geometry and the equilibrium contact angle of the liquid. We also experimentally examined the dynamic motion of the receding contact lines of the dewetting films, and developed a mechanical model for the receding speed. Our results provide a basis for controlling liquid films using microstructures, which is useful for lubricant-impregnated surface production, painting, spray cooling, and surface cleaning. Copyright © 2018 Elsevier Inc. All rights reserved.
Defect-related photoluminescence in Mg-doped GaN nanostructures
NASA Astrophysics Data System (ADS)
Reshchikov, M. A.; Shahedipour-Sandvik, F.; Messer, B. J.; Jindal, V.; Tripathi, N.; Tungare, M.
2009-12-01
Thin film of GaN:Mg, pyramidal GaN:Mg on GaN, sapphire and AlN substrates were grown in a MOCVD system under same growth conditions and at the same time. In samples with Mg-doped GaN pyramids on GaN:Si template a strong ultraviolet (UVL) band with few phonon replicas dominated at low temperature and was attributed to transitions from shallow donors to shallow Mg acceptor. In samples grown on sapphire and AlN substrates the UVL band appeared as a structureless band with the maximum at about 3.25 eV. There is a possibility that the structureless UVL band and the UVL band with phonon structure have different origin. In addition to the UVL band, the blue luminescence (BL) band peaking at 2.9 eV was observed in samples representing GaN:Mg pyramids on GaN:Si substrate. It is preliminary attributed to transitions from shallow donors to Zn acceptor in GaN:Si substrate.
Sapphire Whispering Gallery Thermometer
NASA Astrophysics Data System (ADS)
Strouse, G. F.
2007-12-01
An innovative sapphire whispering gallery thermometer (SWGT) is being explored at the National Institute of Standards and Technology (NIST) as a potential replacement for a standard platinum resistance thermometer (SPRT) for industrial applications that require measurement uncertainties of ≤ 10 mK. The NIST SWGT uses a synthetic sapphire monocrystalline disk configured as a uniaxial, dielectric resonator with whispering gallery modes between 14 GHz and 20 GHz and with Q-factors as large as 90,000. The prototype SWGT stability at the ice melting point (0°C) is ≤ 1 mK with a frequency resolution equivalent to 0.05 mK. The prototype SWGT measurement uncertainty ( k= 1) is 10 mK from 0°C to 100°C for all five resonance modes studied. These results for the SWGT approach the capabilities of industrial resistance thermometers. The SWGT promises greatly increased resistance to mechanical shock relative to SPRTs, over the range from -196°C to 500°C while retaining the low uncertainties needed by secondary calibration laboratories. The temperature sensitivity of the SWGT depends upon a well-defined property (the refractive index at microwave frequencies) and the thermal expansion of a pure material. Therefore, it is expected that SWGTs can be calibrated over a wide temperature range using a reference function, along with deviations measured at a few fixed points. This article reports the prototype SWGT stability, resolution, repeatability, and the temperature dependence of five whispering gallery resonance frequencies in the range from 0°C to 100°C.
The origin of the grooves on Phobos
NASA Technical Reports Server (NTRS)
Thomas, P. C.; Veverka, J.; Duxbury, T.
1977-01-01
Various theories for the long, linear depressions on the surface of Phobos are reviewed. Imagery from Viking Orbiters is used to map the surface distribution of the grooves, study their morphology, and date them by means of the density of superimposed impact craters. Data is presented which tends to support the hypothesis that the deep-seated fracturing was caused by a large, nearly catastrophic cratering event. It is suggested that the grooves were produced during the creation of the Stickney crater, rather than as the result of tidal stresses induced by Mars or by drag forces during the hypothetical capture of the satellite by Mars.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Tendille, Florian, E-mail: florian.tendille@crhea.cnrs.fr; Vennéguès, Philippe; De Mierry, Philippe
2016-08-22
Semipolar GaN crystal stripes larger than 100 μm with dislocation densities below 5 × 10{sup 6} cm{sup −2} are achieved using a low cost fabrication process. An original sapphire patterning procedure is proposed, enabling selective growth of semipolar oriented GaN stripes while confining the defects to specific areas. Radiative and non-radiative crystalline defects are investigated by cathodoluminescence and can be correlated to the development of crystal microstructure during the growth process. A dislocation reduction mechanism, supported by transmission electron microscopy, is proposed. This method represents a step forward toward low-cost quasi-bulk semipolar GaN epitaxial platforms with an excellent structural quality which will allowmore » for even more efficient III-nitride based devices.« less
Hardy, John G; Khaing, Zin Z; Xin, Shangjing; Tien, Lee W; Ghezzi, Chiara E; Mouser, David J; Sukhavasi, Rushi C; Preda, Rucsanda C; Gil, Eun S; Kaplan, David L; Schmidt, Christine E
2015-01-01
Instructive biomaterials capable of controlling the behaviour of the cells are particularly interesting scaffolds for tissue engineering and regenerative medicine. Novel biomaterials are particularly important in societies with rapidly aging populations, where demand for organ/tissue donations is greater than their supply. Herein we describe the preparation of electrically conductive silk film-based nerve tissue scaffolds that are manufactured using all aqueous processing. Aqueous solutions of Bombyx mori silk were cast on flexible polydimethylsiloxane substrates with micrometer-scale grooves on their surfaces, allowed to dry, and annealed to impart β-sheets to the silk which assures that the materials are stable for further processing in water. The silk films were rendered conductive by generating an interpenetrating network of polypyrrole and polystyrenesulfonate in the silk matrix. Films were incubated in an aqueous solution of pyrrole (monomer), polystyrenesulfonate (dopant) and iron chloride (initiator), after which they were thoroughly washed to remove low molecular weight components (monomers, initiators, and oligomers) and dried, yielding conductive films with sheet resistances of 124 ± 23 kΩ square(-1). The micrometer-scale grooves that are present on the surface of the films are analogous to the natural topography in the extracellular matrix of various tissues (bone, muscle, nerve, skin) to which cells respond. Dorsal root ganglions (DRG) adhere to the films and the grooves in the surface of the films instruct the aligned growth of processes extending from the DRG. Such materials potentially enable the electrical stimulation (ES) of cells cultured on them, and future in vitro studies will focus on understanding the interplay between electrical and topographical cues on the behaviour of cells cultured on them.
NASA Astrophysics Data System (ADS)
Sui, Mao; Pandey, Puran; Li, Ming-Yu; Zhang, Quanzhen; Kunwar, Sundar; Lee, Jihoon
2017-01-01
Nanoscale patterning of sapphires is a challenging task due to the high mechanical strength, chemical stability as well as thermal durability. In this paper, we demonstrate a gold droplet assisted approach of nano-hole fabrication on c-plane sapphire via a thermal treatment. Uniformly distributed nano-holes are fabricated on the sapphire surface guided by dome shaped Au nanoparticles (NPs) as catalysts and the patterning process is discussed based on the disequilibrium of vapor, liquid, solid interface energies at the Au NP/sapphire interface induced by the Au evaporation at high temperature. Followed by the re-equilibration of interface energy, transport of alumina from the beneath of NPs to the sapphire surface can occur along the NP/sapphire interface resulting in the formation of nano-holes. The fabrication of nano-holes using Au NPs as catalysts is a flexible, economical and convenient approach and can find applications in various optoelectronics.
Individual Differences in Beat Perception Affect Gait Responses to Low- and High-Groove Music
Leow, Li-Ann; Parrott, Taylor; Grahn, Jessica A.
2014-01-01
Slowed gait in patients with Parkinson’s disease (PD) can be improved when patients synchronize footsteps to isochronous metronome cues, but limited retention of such improvements suggest that permanent cueing regimes are needed for long-term improvements. If so, music might make permanent cueing regimes more pleasant, improving adherence; however, music cueing requires patients to synchronize movements to the “beat,” which might be difficult for patients with PD who tend to show weak beat perception. One solution may be to use high-groove music, which has high beat salience that may facilitate synchronization, and affective properties, which may improve motivation to move. As a first step to understanding how beat perception affects gait in complex neurological disorders, we examined how beat perception ability affected gait in neurotypical adults. Synchronization performance and gait parameters were assessed as healthy young adults with strong or weak beat perception synchronized to low-groove music, high-groove music, and metronome cues. High-groove music was predicted to elicit better synchronization than low-groove music, due to its higher beat salience. Two musical tempi, or rates, were used: (1) preferred tempo: beat rate matched to preferred step rate and (2) faster tempo: beat rate adjusted to 22.5% faster than preferred step rate. For both strong and weak beat-perceivers, synchronization performance was best with metronome cues, followed by high-groove music, and worst with low-groove music. In addition, high-groove music elicited longer and faster steps than low-groove music, both at preferred tempo and at faster tempo. Low-groove music was particularly detrimental to gait in weak beat-perceivers, who showed slower and shorter steps compared to uncued walking. The findings show that individual differences in beat perception affect gait when synchronizing footsteps to music, and have implications for using music in gait rehabilitation. PMID:25374521
Aerodynamic Inner Workings of Circumferential Grooves in a Transonic Axial Compressor
NASA Technical Reports Server (NTRS)
Hah, Chunill; Mueller, Martin; Schiffer, Heinz-Peter
2007-01-01
The current paper reports on investigations of the fundamental flow mechanisms of circumferential grooves applied to a transonic axial compressor. Experimental results show that the compressor stall margin is significantly improved with the current set of circumferential grooves. The primary focus of the current investigation is to advance understanding of basic flow mechanics behind the observed improvement of stall margin. Experimental data and numerical simulations of a circumferential groove were analyzed in detail to unlock the inner workings of the circumferential grooves in the current transonic compressor rotor. A short length scale stall inception occurs when a large flow blockage is built on the pressure side of the blade near the leading edge and incoming flow spills over to the adjacent blade passage due to this blockage. The current study reveals that a large portion of this blockage is created by the tip clearance flow originating from 20% to 50% chord of the blade from the leading edge. Tip clearance flows originating from the leading edge up to 20% chord form a tip clearance core vortex and this tip clearance core vortex travels radially inward. The tip clearance flows originating from 20% to 50% chord travels over this tip clearance core vortex and reaches to the pressure side. This part of tip clearance flow is of low momentum as it is coming from the casing boundary layer and the blade suction surface boundary layer. The circumferential grooves disturb this part of the tip clearance flow close to the casing. Consequently the buildup of the induced vortex and the blockage near the pressure side of the passage is reduced. This is the main mechanism of the circumferential grooves that delays the formation of blockage near the pressure side of the passage and delays the onset of short length scale stall inception. The primary effect of the circumferential grooves is preventing local blockage near the pressure side of the blade leading edge that
Correcting groove error in gratings ruled on a 500-mm ruling engine using interferometric control.
Mi, Xiaotao; Yu, Haili; Yu, Hongzhu; Zhang, Shanwen; Li, Xiaotian; Yao, Xuefeng; Qi, Xiangdong; Bayinhedhig; Wan, Qiuhua
2017-07-20
Groove error is one of the most important factors affecting grating quality and spectral performance. To reduce groove error, we propose a new ruling-tool carriage system based on aerostatic guideways. We design a new blank carriage system with double piezoelectric actuators. We also propose a completely closed-loop servo-control system with a new optical measurement system that can control the position of the diamond relative to the blank. To evaluate our proposed methods, we produced several gratings, including an echelle grating with 79 grooves/mm, a grating with 768 grooves/mm, and a high-density grating with 6000 grooves/mm. The results show that our methods effectively reduce groove error in ruled gratings.
NASA Technical Reports Server (NTRS)
Miyoshi, Kazuhisa; Pohlchuck, Bobby; Whitle, Neville C.; Hector, Louis G., Jr.; Adams, Jim
1998-01-01
An investigation was conducted to examine the adhesion and surface chemistry of single-crystal aluminum in contact with single-crystal sapphire (alumina). Pull-off force (adhesion) measurements were conducted under loads of 0. I to I mN in a vacuum of 10(exp -1) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) at room temperature. An Auger electron spectroscopy analyzer incorporated directly into an adhesion-measuring vacuum system was primarily used to define the chemical nature of the surfaces before and after adhesion measurements. The surfaces were cleaned by argon ion sputtering. With a clean aluminum-clean -sapphire couple the mean value and standard deviation of pull-off forces required to separate the surfaces were 3015 and 298 micro-N, respectively. With a contaminated aluminum-clean sapphire couple these values were 231 and 241 micro-N. The presence of a contaminant film on the aluminum surface reduced adhesion by a factor of 13. Therefore, surfaces cleanliness, particularly aluminum cleanliness, played an important role in the adhesion of the aluminum-sapphire couples. Pressures on the order of 10(exp -8) to 10(exp -9) Pa (approx. 10(exp -10) to 10(exp -11) torr) maintained a clean aluminum surface for only a short time (less then 1 hr) but maintained a clean sapphire surface, once it was achieved, for a much longer time.
NASA Astrophysics Data System (ADS)
Petrie, Christian M.
The U.S. Department of Energy is interested in extending optically-based instrumentation from non-extreme environments to extremely high temperature radiation environments for the purposes of developing in-pile instrumentation. The development of in-pile instrumentation would help support the ultimate goal of understanding the behavior and predicting the performance of nuclear fuel systems at a microstructural level. Single crystal sapphire optical fibers are a promising candidate for in-pile instrumentation due to the high melting temperature and radiation hardness of sapphire. In order to extend sapphire fiber-based optical instrumentation to high temperature radiation environments, the ability of sapphire fibers to adequately transmit light in such an environment must first be demonstrated. Broadband optical transmission measurements of sapphire optical fibers were made in-situ as the sapphire fibers were heated and/or irradiated. The damage processes in sapphire fibers were also modeled from the primary knock-on event from energetic neutrons to the resulting damage cascade in order to predict the formation of stable defects that ultimately determine the resulting change in optical properties. Sapphire optical fibers were shown to withstand temperatures as high as 1300 °C with minimal increases in optical attenuation. A broad absorption band was observed to grow over time without reaching a dynamic equilibrium when the sapphire fiber was heated at temperatures of 1400 °C and above. The growth of this absorption band limits the use of sapphire optical fibers, at least in air, to temperatures of 1300 °C and below. Irradiation of sapphire fibers with gamma rays caused saturation of a defect center located below 500 nm, and extending as far as ~1000 nm, with little effect on the transmission at 1300 and 1550 nm. Increasing temperature during gamma irradiation generally reduced the added attenuation. Reactor irradiation of sapphire fibers caused an initial rapid
Laser melting of groove defect repair on high thermal conductivity steel (HTCS-150)
NASA Astrophysics Data System (ADS)
Norhafzan, B.; Aqida, S. N.; Fazliana, F.; Reza, M. S.; Ismail, I.; Khairil, C. M.
2018-02-01
This paper presents laser melting repair of groove defect on HTCS-150 surface using Nd:YAG laser system. Laser melting process was conducted using JK300HPS Nd:YAG twin lamp laser source with 1064 nm wavelength and pulsed mode. The parameters are pulse repetition frequency (PRF) that is set from 70 to 100 Hz, average power ( P A) of 50-70 W, and laser spot size of 0.7 mm. HTCS-150 samples were prepared with groove dimension of 0.3 mm width and depths of 0.5 mm using EDM wire cut. Groove defect repaired using laser melting process on groove surface area with various parameters' process. The melted surface within the groove was characterized for subsurface hardness profile, roughness, phase identification, chemical composition, and metallographic study. The roughness analysis indicates high PRF at large spot size caused high surface roughness and low surface hardness. Grain refinement of repaired layer was analyzed within the groove as a result of rapid heating and cooling. The hardness properties of modified HTCS inside the groove and the bulk surface increased two times from as received HTCS due to grain refinement which is in agreement with Hall-Petch equation. These findings are significant to parameter design of die repair for optimum surface integrity and potential for repairing crack depth and width of less than 0.5 and 0.3 mm, respectively.
Rise and fall of ferromagnetism in O-irradiated Al{sub 2}O{sub 3} single crystals
DOE Office of Scientific and Technical Information (OSTI.GOV)
Li, Qiang; China Spallation Neutron Source, Institute of High Energy Physics, Chinese Academy of Sciences, Dongguan 523803; Xu, Juping
2015-06-21
In dilute magnetic semiconductors studies, sapphire was usually used as non-magnetic substrate for films. We observed weak ferromagnetic component in Al{sub 2}O{sub 3} single crystal substrate, and excluded the possibility of ferromagnetic contaminations carefully by inductively coupled plasma mass spectrometry and X-ray photoelectron spectroscopy. The ferromagnetism rise and fall during the process of annealing-oxygen irradiation-annealing of the sapphire. The ferromagnetic changes are consistent with Al-vacancy related defects detected by positron annihilation spectroscopy. With first-principle calculations, we confirm that Al-vacancy can introduce magnetic moment for 3 μB in Al{sub 2}O{sub 3} crystal and form stable V{sub Al}-V{sub Al} ferromagnetic coupling at roommore » temperature.« less
From the Bandstand to the Classroom: Thinking and Playing Grooves
ERIC Educational Resources Information Center
Baxter, Marsha; Santantasio, Christopher
2012-01-01
In this article, narratives of a salsa concert and a lesson with a Native American flute performer provide openings for exploring grooves and their application in the music classroom. The term "groove" is examined, along with some non-Western ideas about time as represented in the music of the West African Kpelle people. A sixth-grade…
[Developmental radicular groove as a cause of endodontic failure].
Fabra Campos, H; Millet Part, J
1989-01-01
A clinical case of apical injury on an upper lateral incisor with endodontical and surgical failures in its treatment is presented. Extraction of the incisor and its study at the stereoscopic microscope showed the existence of a developmental groove running from the cingulum to the end of the root, establishing a communication between the crevice and the apical part of the tooth. Bacterial infection through the groove could provide an explanation for treatment failure.
Grooving of concrete pavements : final report.
DOT National Transportation Integrated Search
1973-08-01
This project was initiated by the Louisiana Department of Highways in cooperation with the Federal Highway Administration to determine whether transverse diamond cut grooves of a certain style (Christensen Style 7) placed in hardened concrete in seve...
Plant nuclei can contain extensive grooves and invaginations
NASA Technical Reports Server (NTRS)
Collings, D. A.; Carter, C. N.; Rink, J. C.; Scott, A. C.; Wyatt, S. E.; Allen, N. S.; Brown, C. S. (Principal Investigator)
2000-01-01
Plant cells can exhibit highly complex nuclear organization. Through dye-labeling experiments in untransformed onion epidermal and tobacco culture cells and through the expression of green fluorescent protein targeted to either the nucleus or the lumen of the endoplasmic reticulum/nuclear envelope in these cells, we have visualized deep grooves and invaginations into the large nuclei of these cells. In onion, these structures, which are similar to invaginations seen in some animal cells, form tubular or planelike infoldings of the nuclear envelope. Both grooves and invaginations are stable structures, and both have cytoplasmic cores containing actin bundles that can support cytoplasmic streaming. In dividing tobacco cells, invaginations seem to form during cell division, possibly from strands of the endoplasmic reticulum trapped in the reforming nucleus. The substantial increase in nuclear surface area resulting from these grooves and invaginations, their apparent preference for association with nucleoli, and the presence in them of actin bundles that support vesicle motility suggest that the structures might function both in mRNA export from the nucleus and in protein import from the cytoplasm to the nucleus.
Mechanical grooving effect on the gettering efficiency of crystalline silicon based solar cells
NASA Astrophysics Data System (ADS)
Zarroug, Ahmed; Hamed, Zied Ben; Derbali, Lotfi; Ezzaouia, Hatem
2017-04-01
This paper examines a gettering process of Czochralski silicon (CZ) via mechanical texture, followed by two step heat treatment in the presence of porous silicon layer (PSL) under oxygen flow gas. It is shown that a process with PS has a positive trend of improvement in the electronic quality, and found to be more efficient when used in combination with mechanical grooving. We obtained a significant increase of the effective minority carrier lifetime and majority charge carriers mobility. Thus, there is an apparent decrease in the resistivity. These parameters were estimated through a The Quasi-Steady-State Photo-Conductance technique (QSSPC), the van Der Pauw method and Hall Effect. Particularly, we have made obvious that the large enhancement of the electronic quality of the wafers can be related to the presence of grooves, the influence during which the gettering process is of importance to overcome the unexpected saturation phenomena. The current voltage I-V characteristics of all samples had been measured under illumination. They were shown to enhance the photovoltaic properties of solar cells.
High-temperature sensor instrumentation with a thin-film-based sapphire fiber.
Guo, Yuqing; Xia, Wei; Hu, Zhangzhong; Wang, Ming
2017-03-10
A novel sapphire fiber-optic high-temperature sensor has been designed and fabricated based on blackbody radiation theory. Metallic molybdenum has been used as the film material to develop the blackbody cavity, owing to its relatively high melting point compared to that of sapphire. More importantly, the fabrication process for the blackbody cavity is simple, efficient, and economical. Thermal radiation emitted from such a blackbody cavity is transmitted via optical fiber to a remote place for detection. The operating principle, the sensor structure, and the fabrication process are described here in detail. The developed high-temperature sensor was calibrated through a calibration blackbody furnace at temperatures from 900°C to 1200°C and tested by a sapphire crystal growth furnace up to 1880°C. The experimental results of our system agree well with those from a commercial Rayteck MR1SCCF infrared pyrometer, and the maximum residual is approximately 5°C, paving the way for high-accuracy temperature measurement especially for extremely harsh environments.
Bonding Lexan and sapphire to form high-pressure, flame-resistant window
NASA Technical Reports Server (NTRS)
Richardson, William R.; Walker, Ernie D.
1987-01-01
Flammable materials have been studied in normal gravity and microgravity for many years. Photography plays a major role in the study of the combustion process giving a permanent visual record that can be analyzed. When these studies are extended to manned spacecraft, safety becomes a primary concern. The need for a high-pressure, flame-resistant, shatter-resistant window permitting photographic recording of combustion experiments in manned spacecraft prompted the development of a method for bonding Lexan and sapphire. Materials that resist shattering (e.g., Lexan) are not compatible with combustion experiments; the material loses strength at combustion temperatures. Sapphire is compatible with combustion temperatures in oxygen-enriched atmospheres but is subject to shattering. Combining the two materials results in a shatter-resistant, flame-resistant window. Combustion in microgravity produces a low-visibility flame; however, flame propagation and flame characteristics are readily visible as long as there is no deterioration of the image. Since an air gap between the Lexan and the sapphire would reduce transmission, a method was developed for bonding these unlike materials to minimize light loss.
Implementation of ZnO/ZnMgO strained-layer superlattice for ZnO heteroepitaxial growth on sapphire
NASA Astrophysics Data System (ADS)
Petukhov, Vladimir; Bakin, Andrey; Tsiaoussis, Ioannis; Rothman, Johan; Ivanov, Sergey; Stoemenos, John; Waag, Andreas
2011-05-01
The main challenge in fabrication of ZnO-based devices is the absence of reliable p-type material. This is mostly caused by insufficient crystalline quality of the material and not well-enough-developed native point defect control of ZnO. At present high-quality ZnO wafers are still expensive and ZnO heteroepitaxial layers on sapphire are the most reasonable alternative to homoepitaxial layers. But it is still necessary to improve the crystalline quality of the heteroepitaxial layers. One of the approaches to reduce defect density in heteroepitaxial layers is to introduce a strained-layer superlattice (SL) that could stop dislocation propagation from the substrate-layer interface. In the present paper we have employed fifteen periods of a highly strained SL structure. The structure was grown on a conventional double buffer layer comprising of high-temperature MgO/low-temperature ZnO on sapphire. The influence of the SLs on the properties of the heteroepitaxial ZnO layers is investigated. Electrical measurements of the structure with SL revealed very high values of the carrier mobility up to 210 cm2/Vs at room temperature. Structural characterization of the obtained samples showed that the dislocation density in the following ZnO layer was not reduced. The high mobility signal appears to come from the SL structure or the SL/ZnO interface.
Two pad axially grooved hydrostatic bearing
NASA Technical Reports Server (NTRS)
San Andres, Luis A. (Inventor)
1995-01-01
A hydrostatic bearing having two axial grooves on opposite sides of the bearing for breaking the rotational symmetry in the dynamic force coefficients thus reducing the whirl frequency ratio and increasing the damping and stiffness of the hydrostatic bearing.
Development of optimized, graded-permeability axial groove heat pipes
NASA Technical Reports Server (NTRS)
Kapolnek, Michael R.; Holmes, H. Rolland
1988-01-01
Heat pipe performance can usually be improved by uniformly varying or grading wick permeability from end to end. A unique and cost effective method for grading the permeability of an axial groove heat pipe is described - selective chemical etching of the pipe casing. This method was developed and demonstrated on a proof-of-concept test article. The process improved the test article's performance by 50 percent. Further improvement is possible through the use of optimally etched grooves.
Inagawa, Arinori; Okada, Yusuke; Okada, Tetsuo
2018-06-01
Channel-like grooves are formed on the surface of frozen aqueous sucrose. They are filled with a freeze concentrated solution (FCS) and act as an efficient size-tunable separation field for micro and nanoparticles. The width of the channel can be easily varied by changing the temperature. Because the channel width decreases with decreasing temperature, particles become immobilized due to physical interference from the ice wall when the temperature reaches a threshold point specific to the particle size. Surface modification of particles can add a factor of chemical interaction between the particles and ice walls. In this study, anti-freeze proteins (AFPs) are anchored on 1µm-polystyrene (PS) particles, and their behavior in the surface grooves on the ice is studied. The threshold temperature is an effective criterion for evaluating chemical interactions between particles and ice walls. The AFP binding on 1µm PS particles lowers the threshold temperature by 2.5°C, indicating interactions between AFPs on the PS particles and the ice wall. Because the AFPs studied here show selectivity towards the prism plane, it is critical that the prism plane of the ice crystal is in contact with the FCS in the surface grooves. Copyright © 2017 Elsevier B.V. All rights reserved.
Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices
DOE Office of Scientific and Technical Information (OSTI.GOV)
Wang, Ziwen; Xue, Zhongying; Zhang, Miao
Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less
Germanium-Assisted Direct Growth of Graphene on Arbitrary Dielectric Substrates for Heating Devices
Wang, Ziwen; Xue, Zhongying; Zhang, Miao; ...
2017-05-31
Direct growth of graphene on dielectric substrates is a prerequsite for the development of graphene-based electronic and optoelectronic devices. However, the current graphene synthesis directly on dielectric substrates always involves metal contamination problem, and the direct production of graphene patterns still remains unattainable and challenging. We propose herein a semiconducting Ge-assisted chemical vapor deposition approach to directly grow monolayer graphene on arbitrary dielectric substrates. By pre-patterning of catalytic Ge layer, the graphene with desired pattern can be achieved with extreme ease. Due to the catalysis of Ge, monolayer graphene is able to form on Ge covered dielectric substrates including SiOmore » 2/Si, quartz glass and sapphire substrates. Optimization of the process parameters leads to the complete sublimation of catalytic Ge layer during or immediately after monolayer graphene formation, thus resulting in direct deposition of large-area continuous graphene on dielectric substrates. The large-area, highly conductive graphene synthesized on transparent dielectric substrate using the proposed approach has exhibited wide applications, e.g., in defogger and in thermochromic displays, with both devices possessing excellent performances.« less
NASA Technical Reports Server (NTRS)
Dick, G. John (Inventor); Santiago, David G. (Inventor)
1999-01-01
A sapphire resonator for an ultrastable oscillator capable of substantial performance improvements over the best available crystal quartz oscillators in a compact cryogenic package is based on a compensation mechanism enabled by the difference between copper and sapphire thermal expansion coefficients for so tuning the resonator as to cancel the temperature variation of the sapphire's dielectric constant. The sapphire resonator consists of a sapphire ring separated into two parts with webs on the outer end of each to form two re-entrant parts which are separated by a copper post. The re-entrant parts are bonded to the post by indium solder for good thermal conductivity between parts of that subassembly which is supported on the base plate of a closed copper cylinder (rf shielding casing) by a thin stainless steel cylinder. A unit for temperature control is placed in the stainless steel cylinder and is connected to the subassembly of re-entrant parts and copper post by a layer of indium for good thermal conduction. In normal use, the rf shielding casing is placed in a vacuum tank which is in turn placed in a thermos flask of liquid nitrogen. The temperature regulator is controlled from outside the thermos flask to a temperature in a range of about 40K to 150K, such as 87K for the WGH-811, mode of resonance in response to microwave energy inserted into the rf shielding casing through a port from an outside source.
NASA Technical Reports Server (NTRS)
Asthana, R.; Tiwari, R.; Tewari, S. N.
1995-01-01
Sapphire-reinforced NiAl matrix composites with chromium or tungsten as alloying additions were synthesized using casting and zone directional solidification (DS) techniques and characterized by a fiber pushout test as well as by microhardness measurements. The sapphire-NiAl(Cr) specimens exhibited an interlayer of Cr rich eutectic at the fiber-matrix interface and a higher interfacial shear strength compared to unalloyed sapphire-NiAl specimens processed under identical conditions. In contrast, the sapphire-NiAl(W) specimens did not show interfacial excess of tungsten rich phases, although the interfacial shear strength was high and comparable to that of sapphire-NiAl(Cr). The postdebond sliding stress was higher in sapphire-NiAl(Cr) than in sapphire-NiAl(W) due to interface enrichment with chromium particles. The matrix microhardness progressively decreased with increasing distance from the interface in both DS NiAl and NiAl(Cr) specimens. The study highlights the potential of casting and DS techniques to improve the toughness and strength of NiAl by designing dual-phase microstructures in NiAl alloys reinforced with sapphire fibers.
The role of the bicipital groove in tendopathy of the long biceps tendon.
Pfahler, M; Branner, S; Refior, H J
1999-01-01
Long biceps tendon disease is often underrated but plays an important role in anterior shoulder pain. We studied prospectively the anatomy of the bicipital groove and its relationship to clinical symptoms. Sixty-seven consecutive patients were investigated by mutual ultrasonography and radiographs of the intertubercular groove. All images were scrutinized for biceps tendon status (ultrasonography) and groove anatomy (radiography). Thirty-seven patients (21 male, 16 female, average age 48 years) had chronic anterior shoulder pain, and 30 patients (16 male, 14 female, average age 46 years) served as a control group. In 28 shoulders we found sonographic signs of tendovaginitis, and in 14 we found degenerative changes. The mean age of patients with pathologic conditions of the long biceps tendon was 40 years, significantly lower than that of the complete study group. The x-ray films revealed a great variation in the medial and total opening angle of the groove, whereas width, depth, and humeral head diameter showed sex-related differences. Radiologic signs of groove degeneration correlated in 43.6% with biceps tendon disease on the sonogram. Our study revealed statistically significant correlations between groove anatomy and long biceps tendon disease, which should be considered more while shoulder problems are evaluated.
Tunable THz notch filter with a single groove inside parallel-plate waveguides.
Lee, Eui Su; Jeon, Tae-In
2012-12-31
A single groove in a parallel-plate waveguide (PPWG) has been applied to a tunable terahertz (THz) notch filter with a transverse-electromagnetic (TEM) mode. When the air gap between the metal plates of the PPWG is controlled from 60 to 240 μm using a motor controlled translation stage or a piezo-actuator, the resonant frequency of the notch filter is changed from 1.75 up to 0.62 THz, respectively. Therefore, the measured tunable sensitivity of the notch filter increases to 6.28 GHz/μm. The measured resonant frequencies were found to be in good agreement with the calculation using an effective groove depth. Using a finite-difference time-domain (FDTD) simulation, we also demonstrate that the sensitivity of a THz microfluidic sensor can be increased via a small air gap, a narrow groove width, and a deep groove depth.
Control of relative carrier-envelope phase slip in femtosecond Ti:sapphire and Cr:forsterite lasers.
Kobayashi, Yohei; Torizuka, Kenji; Wei, Zhiyi
2003-05-01
We were able to control relative carrier-envelope phase slip among mode-locked Ti:sapphire and Cr:forsterite lasers by employing electronic feedback. The pulse timings of these lasers were passively synchronized with our crossing-beam technique. Since the optical-frequency ratio of Ti:sapphire and Cr:forsterite is approximately 3:2, we can observe the phase relation by superimposing the third harmonic of Cr:forsterite and the second harmonic of Ti:sapphire lasers in time and in space. The spectrum width of the locked beat note was less than 3 kHz, which corresponds to the controlled fluctuation of a cavity-length difference of less than 10 pm.
Kerr-lens mode-locked Ti:Sapphire laser pumped by a single laser diode
NASA Astrophysics Data System (ADS)
Kopylov, D. A.; Esaulkov, M. N.; Kuritsyn, I. I.; Mavritskiy, A. O.; Perminov, B. E.; Konyashchenko, A. V.; Murzina, T. V.; Maydykovskiy, A. I.
2018-04-01
The performance of a Ti:sapphire laser pumped by a single 461 nm laser diode is presented for both the continuous-wave and the mode-locked regimes of operation. We introduce a simple astigmatism correction scheme for the laser diode beam consisting of two cylindrical lenses affecting the pump beam along the fast axis of the laser diode, which provides the mode-matching between the nearly square-shaped pump beam and the cavity mode. The resulting efficiency of the suggested Ti:Sapphire oscillator pumped by such a laser diode is analyzed for the Ti:sapphire crystals of 3 mm, 5 mm and 10 mm in length. We demonstrate that such a system provides the generation of ultrashort pulses up to 15 fs in duration with the repetition rate of 87 MHz, the average power being 170 mW.
Method of forming grooves in the [011] crystalline direction
NASA Technical Reports Server (NTRS)
Marinelli, Donald Paul (Inventor)
1977-01-01
An A-B etchant is applied to a (100) surface of a body of semiconductor material, a portion of which along the (100) surface of the body is either gallium arsenide or gallium aluminum arsenide. The etchant is applied for at least 15 seconds at a temperature of approximately 80.degree. C. The A-B etchant is a solution by weight percent of 47.5%, water, 0.2% silver nitrate, 23.8% chromium trioxide and 28.5% of a 48% aqueous solution of hydrofluoric acid. As a result of the application of the A-B etchant a pattern of elongated etch pits form having their longitudinal axes along the [011] crystalline direction. Grooves are formed in the body at a surface opposite the (100) surface on which was applied the etchant. The grooves are formed along the [011] crystalline direction by aligning the longitudinal axes of the grooves with the longitudinal axes of the etch pits.
NASA Astrophysics Data System (ADS)
Zhu, Z. Y.; Mo, J. L.; Wang, D. W.; Zhao, J.; Zhu, M. H.; Zhou, Z. R.
2018-04-01
In this work, the interfacial friction and wear and vibration characteristics are studied by sliding a chromium bearing steel ball (AISI 52100) over both multi-grooved and single-grooved forged steel disks (20CrMnMo) at low and high rotating speeds in order to reveal the effect mechanism of groove-textured surface on tribological behaviors. The results show that the grooves modify the contact state of the ball and the disk at the contact interface. This consequently causes variations in the normal displacement, normal force, and friction force signals. The changes in these three signals become more pronounced with increasing groove width at a low speed. The collision behavior between the ball and the groove increase the amplitude of vibration acceleration at a high speed. The test results suggest that grooves with appropriate widths could trap wear debris on the ball surface while avoiding a strong collision between the disk and the ball, resulting in an improvement in the wear states.
Ohtaki, Akashi; Kida, Hiroshi; Miyata, Yusuke; Ide, Naoki; Yonezawa, Akihiro; Arakawa, Takatoshi; Iizuka, Ryo; Noguchi, Keiichi; Kita, Akiko; Odaka, Masafumi; Miki, Kunio; Yohda, Masafumi
2008-02-29
Prefoldin (PFD) is a heterohexameric molecular chaperone complex in the eukaryotic cytosol and archaea with a jellyfish-like structure containing six long coiled-coil tentacles. PFDs capture protein folding intermediates or unfolded polypeptides and transfer them to group II chaperonins for facilitated folding. Although detailed studies on the mechanisms for interaction with unfolded proteins or cooperation with chaperonins of archaeal PFD have been performed, it is still unclear how PFD captures the unfolded protein. In this study, we determined the X-ray structure of Pyrococcus horikoshii OT3 PFD (PhPFD) at 3.0 A resolution and examined the molecular mechanism for binding and recognition of nonnative substrate proteins by molecular dynamics (MD) simulation and mutation analyses. PhPFD has a jellyfish-like structure with six long coiled-coil tentacles and a large central cavity. Each subunit has a hydrophobic groove at the distal region where an unfolded substrate protein is bound. During MD simulation at 330 K, each coiled coil was highly flexible, enabling it to widen its central cavity and capture various nonnative proteins. Docking MD simulation of PhPFD with unfolded insulin showed that the beta subunit is essentially involved in substrate binding and that the alpha subunit modulates the shape and width of the central cavity. Analyses of mutant PhPFDs with amino acid replacement of the hydrophobic residues of the beta subunit in the hydrophobic groove have shown that beta Ile107 has a critical role in forming the hydrophobic groove.
Electrical and Thermal Analysis of Gallium Nitride HEMTs
2009-06-01
devices are currently constructed with various substrates such as silicon-carbide (SiC) or sapphire. The current market availability and scientific...current with Vgs = +2V is around 0.2A while the knee of the curve begins around Vds = 4V . Figure 12 describes the device of Gm versus dsV . The
DOE Office of Scientific and Technical Information (OSTI.GOV)
Blue, Thomas; Windl, Wolfgang
The primary objective of this project was to determine the optical attenuation and signal degradation of sapphire optical fibers & sensors (temperature & strain), in-situ, operating at temperatures up to 1500°C during reactor irradiation through experiments and modeling. The results will determine the feasibility of extending sapphire optical fiber-based instrumentation to extremely high temperature radiation environments. This research will pave the way for future testing of sapphire optical fibers and fiber-based sensors under conditions expected in advanced high temperature reactors.
The multiple V-shaped double peeling of elastic thin films from elastic soft substrates
NASA Astrophysics Data System (ADS)
Menga, N.; Afferrante, L.; Pugno, N. M.; Carbone, G.
2018-04-01
In this paper, a periodic configuration of V-shaped double peeling process is investigated. Specifically, an elastic thin film is detached from a soft elastic material by applying multiple concentrated loads periodically distributed with spatial periodicity λ. The original Kendall's idea is extended to take into account the change in elastic energy occurring in the substrate when the detachment fronts propagate. The symmetric configuration typical of a V-peeling process causes the energy release rate to be sensitive to variations of the elastic energy stored in the soft substrate. This results in an enhancement of the adhesion strength because part of the external work required to trigger the peeling mechanism is converted in substrate elastic energy. A key role is played by both spatial periodicity λ and elasticity ratio E/Eh, between tape and substrate elastic moduli, in determining the conditions of stable adhesion. Indeed, the presence of multiple peeling fronts determines a modification of the mechanism of interaction, because deformations close to each peeling front are also affected by the stresses related to the other fronts. Results show that the energy release rate depends on the detached length of the tape so that conditions can be established which lead to an increase of the supported load compared to the classical peeling on rigid substrates. Finally, we also find that for any given value of the load per unit length, an optimum value of the wavelength λ exists that maximizes the tolerance of the system, before unstable propagation of the peeling front can occur.
2009-05-01
2 Figure 2. Schematic of a Schottky diode structure (a) grown on an insulating substrate such as sapphire that requires front side...an on-axis substrate at 1000 °C taken (a) at a high magnification and (b) in a region where micropores were observed. ..........8 Figure 5. The 5 x...is useful for vertical high power devices. It can also be made insulating by growing it in a very pure state, which is useful for lateral high
NASA Astrophysics Data System (ADS)
Bland, M. T.; McKinnon, W. B.
2010-12-01
Ganymede’s iconic topography offers clues to both the satellite’s thermal evolution, and the mechanics of tectonic deformation on icy satellites. Much of Ganymede’s surface consists of bright, young terrain, with a characteristic morphology dubbed “groove terrain”. As reviewed in Pappalardo et al. (2004), in Jupiter - The Planet, Satellites, and Magnetosphere (CUP), grooved terrain consists of sets of quasi-parallel, periodically-spaced, ridges and troughs. Peak-to-trough groove amplitudes are ~500 m, with low topographic slopes (~5°). Groove spacing is strongly periodic within a single groove set, ranging from 3-17 km; shorter wavelength deformation is also apparent in high-resolution images. Grooved terrain likely formed via unstable extension of Ganymede’s ice lithosphere, which was deformed into periodically-spaced pinches and swells, and accommodated by tilt-block normal faulting. Analytical models of unstable extension support this formation mechanism [Dombard and McKinnon 2001, Icarus 154], but initial numerical models of extending ice lithospheres struggled to produce large-amplitude, groove-like deformation [Bland and Showman 2007, Icarus 189]. Here we present simulations that reproduce many of the characteristics of Ganymede’s grooves [Bland et al. 2010, Icarus in press]. By more realistically simulating the decrease in material strength after initial fault development, our model allows strain to become readily localized into discrete zones. Such strain localization leads to the formation of periodic structures with amplitudes of 200-500 m, and wavelengths of 3-20 km. The morphology of the deformation depends on both the lithospheric thermal gradient, and the rate at which material strength decreases with increasing plastic strain. Large-amplitude, graben-like structures form when material weakening occurs rapidly with increasing strain, while lower-amplitude, periodic structures form when the ice retains its strength. Thus, extension can
Readout signals calculated for near-field optical pickups with land and groove recording.
Saito, K; Kishima, K; Ichimura, I
2000-08-10
Optical disk readout signals with a solid immersion lens (SIL) and the land-groove recording technique are calculated by use of a simplified vector-diffraction theory. In this method the full vector-diffraction theory is applied to calculate the diffracted light from the initial state of the disk, and the light scattered from the recorded marks is regarded as a perturbation. Using this method, we confirmed that the land-groove recording technique is effective as a means of cross-talk reduction even when the numerical aperture is more than 1. However, the top surface of the disk under the SIL must be flat, or the readout signal from marks recorded on a groove decays when the optical depth of the groove is greater than lambda/8.
NASA Astrophysics Data System (ADS)
Yu, Yunluo; Pu, Guang; Jiang, Kyle
2017-12-01
This paper describes a theoretical investigation of static and dynamic characteristics of herringbone-grooved air thrust bearings. Firstly, Finite Difference Method (FDM) and Finite Volume Method (FVM) are used in combination to solve the non-linear Reynolds equation and to find the pressure distribution of the film and the total loading capacity of the bearing. The influence of design parameters on air film gap characteristics, including the air film thickness, depth of the groove and rotating speed, are analyzed based on the FDM model. The simulation results show that hydrostatic thrust bearings can achieve a better load capacity with less air consumption than herringbone grooved thrust bearings at low compressibility number; herringbone grooved thrust bearings can achieve a higher load capacity but with more air consumption than hydrostatic thrust bearing at high compressibility number; herringbone grooved thrust bearings would lose stability at high rotating speeds, and the stability increases with the depth of the grooves.
Site location and optical properties of Eu implanted sapphire
NASA Astrophysics Data System (ADS)
Marques, C.; Wemans, A.; Maneira, M. J. P.; Kozanecki, A.; da Silva, R. C.; Alves, E.
2005-10-01
Synthetic colourless transparent (0 0 0 1) sapphire crystals were implanted at room temperature with 100 keV europium ions to fluences up to 1 × 1016 cm-2. Surface damage is observed at low fluences, as seen by Rutherford backscattering spectrometry under channelling conditions. Optical absorption measurements revealed a variety of structures, most probably related to F-type defects characteristic of implantation damage. Thermal treatments in air or in vacuum up to 1000 °C do not produce noticeable changes both in the matrix or the europium profiles. However, the complete recovery of the implantation damage and some redistribution of the europium ions is achieved after annealing at 1300 °C in air. Detailed lattice site location studies performed for various axial directions allowed to assess the damage recovery and the incorporation of the Eu ions into well defined crystallographic sites, possibly in an oxide phase also inferred from optical absorption measurements.
Channel plasmon-polariton guiding by subwavelength metal grooves.
Bozhevolnyi, Sergey I; Volkov, Valentyn S; Devaux, Eloïse; Ebbesen, Thomas W
2005-07-22
We report on realization of channel plasmon-polariton (CPP) propagation along a subwavelength metal groove. Using imaging with a near-field microscope and end-fire coupling with a tapered fiber connected to a tunable laser at telecommunication wavelengths (1425-1620 nm), we demonstrate low-loss (propagation length approximately 100 microm) and well-confined (mode width approximately 1.1 microm) CPP guiding along a triangular 0.6 microm-wide and 1 microm-deep groove in gold. We develop a simple model based on the effective-index method that accounts for the main features of CPP guiding and provides a clear physical picture of this phenomenon.
Optimal Tempo for Groove: Its Relation to Directions of Body Movement and Japanese nori
Etani, Takahide; Marui, Atsushi; Kawase, Satoshi; Keller, Peter E.
2018-01-01
The tendency for groove-based music to induce body movements has been linked to multiple acoustical factors. However, it is unclear how or whether tempo affects groove, although tempo significantly affects other aspects of music perception. To address this issue, the present study investigated effects of tempo, specific rhythmic organizations of patterns, and syncopation on groove and the induction of the sensation of wanting to move. We focused on the directions of body movement in particular by taking into account nori, which is an indigenous Japanese musical term used not only synonymously with groove, but also as a spatial metaphor indicating vertical or horizontal movement directions. Thus, the present study explored how groove was felt and defined, as well as how musical factors induced the sensation of wanting to move in cross-cultural context. A listening experiment was conducted using drum breaks as stimuli. Stimuli consisted of various rhythm patterns at six tempi from 60 to 200 BPM. The main findings are that: (1) an optimal tempo for groove existed for drum breaks at around 100–120 BPM, (2) an optimal tempo existed for the sensation of wanting to move the body in specific directions (i.e., back-and-forth and side-to-side), (3) groove and nori shared a similar concept of wanting to move but differed on several points (i.e., association with sense of pulse and fast tempo). Overall, the present study suggests that there is an optimal tempo for body movement related to groove. This finding has implications for the use of music or rhythmic stimuli to induce smooth motion in rehabilitation, therapy, or dance. PMID:29692747
High-pressure sapphire cell for phase equilibria measurements of CO2/organic/water systems.
Pollet, Pamela; Ethier, Amy L; Senter, James C; Eckert, Charles A; Liotta, Charles L
2014-01-24
The high pressure sapphire cell apparatus was constructed to visually determine the composition of multiphase systems without physical sampling. Specifically, the sapphire cell enables visual data collection from multiple loadings to solve a set of material balances to precisely determine phase composition. Ternary phase diagrams can then be established to determine the proportion of each component in each phase at a given condition. In principle, any ternary system can be studied although ternary systems (gas-liquid-liquid) are the specific examples discussed herein. For instance, the ternary THF-Water-CO2 system was studied at 25 and 40 °C and is described herein. Of key importance, this technique does not require sampling. Circumventing the possible disturbance of the system equilibrium upon sampling, inherent measurement errors, and technical difficulties of physically sampling under pressure is a significant benefit of this technique. Perhaps as important, the sapphire cell also enables the direct visual observation of the phase behavior. In fact, as the CO2 pressure is increased, the homogeneous THF-Water solution phase splits at about 2 MPa. With this technique, it was possible to easily and clearly observe the cloud point and determine the composition of the newly formed phases as a function of pressure. The data acquired with the sapphire cell technique can be used for many applications. In our case, we measured swelling and composition for tunable solvents, like gas-expanded liquids, gas-expanded ionic liquids and Organic Aqueous Tunable Systems (OATS)(1-4). For the latest system, OATS, the high-pressure sapphire cell enabled the study of (1) phase behavior as a function of pressure and temperature, (2) composition of each phase (gas-liquid-liquid) as a function of pressure and temperature and (3) catalyst partitioning in the two liquid phases as a function of pressure and composition. Finally, the sapphire cell is an especially effective tool to gather
DOE Office of Scientific and Technical Information (OSTI.GOV)
Menapace, J A; Schaffers, K I; Bayramian, A J
2008-02-26
Advanced magnetorheological finishing (MRF) techniques have been applied to Ti:sapphire crystals to compensate for sub-millimeter lattice distortions that occur during the crystal growing process. Precise optical corrections are made by imprinting topographical structure onto the crystal surfaces to cancel out the effects of the lattice distortion in the transmitted wavefront. This novel technique significantly improves the optical quality for crystals of this type and sets the stage for increasing the availability of high-quality large-aperture sapphire and Ti:sapphire optics in critical applications.
High-quality AlN grown on a thermally decomposed sapphire surface
NASA Astrophysics Data System (ADS)
Hagedorn, S.; Knauer, A.; Brunner, F.; Mogilatenko, A.; Zeimer, U.; Weyers, M.
2017-12-01
In this study we show how to realize a self-assembled nano-patterned sapphire surface on 2 inch diameter epi-ready wafer and the subsequent AlN overgrowth both in the same metal-organic vapor phase epitaxial process. For this purpose in-situ annealing in H2 environment was applied prior to AlN growth to thermally decompose the c-plane oriented sapphire surface. By proper AlN overgrowth management misoriented grains that start to grow on non c-plane oriented facets of the roughened sapphire surface could be overcome. We achieved crack-free, atomically flat AlN layers of 3.5 μm thickness. The layers show excellent material quality homogeneously over the whole wafer as proved by the full width at half maximum of X-ray measured ω-rocking curves of 120 arcsec to 160 arcsec for the 002 reflection and 440 arcsec to 550 arcsec for the 302 reflection. The threading dislocation density is 2 ∗ 109 cm-2 which shows that the annealing and overgrowth process investigated in this work leads to cost-efficient AlN templates for UV LED devices.
NMR studies of DNA oligomers and their interactions with minor groove binding ligands
DOE Office of Scientific and Technical Information (OSTI.GOV)
Fagan, Patricia A.
1996-05-01
The cationic peptide ligands distamycin and netropsin bind noncovalently to the minor groove of DNA. The binding site, orientation, stoichiometry, and qualitative affinity of distamycin binding to several short DNA oligomers were investigated by NMR spectroscopy. The oligomers studied contain A,T-rich or I,C-rich binding sites, where I = 2-desaminodeoxyguanosine. I•C base pairs are functional analogs of A•T base pairs in the minor groove. The different behaviors exhibited by distamycin and netropsin binding to various DNA sequences suggested that these ligands are sensitive probes of DNA structure. For sites of five or more base pairs, distamycin can form 1:1 or 2:1more » ligand:DNA complexes. Cooperativity in distamycin binding is low in sites such as AAAAA which has narrow minor grooves, and is higher in sites with wider minor grooves such as ATATAT. The distamycin binding and base pair opening lifetimes of I,C-containing DNA oligomers suggest that the I,C minor groove is structurally different from the A,T minor groove. Molecules which direct chemistry to a specific DNA sequence could be used as antiviral compounds, diagnostic probes, or molecular biology tools. The author studied two ligands in which reactive groups were tethered to a distamycin to increase the sequence specificity of the reactive agent.« less
Controlling material birefringence in sapphire via self-assembled, sub-wavelength defects
NASA Astrophysics Data System (ADS)
Singh, Astha; Sharma, Geeta; Ranjan, Neeraj; Mittholiya, Kshitij; Bhatnagar, Anuj; Singh, B. P.; Mathur, Deepak; Vasa, Parinda
2018-02-01
Birefringence is the optical property of a material having a refractive index that depends on the polarization and propagation direction of light. Generally, this is an intrinsic optical property of a material and cannot be altered. Here, we report a novel technique—direct laser writing—that enables us to control the natural, material birefringence of sapphire over a broad range of wavelengths. The broadband form birefringence originating from self-assembled, periodic array of sub-wavelength (˜ 50-200 nm) defects created by laser writing, can enhance, suppress or maintain the material birefringence of sapphire without affecting its transparency range in visible or its surface quality.
Thermal boundary resistance between sapphire and aluminum monocrystals at low temperature
DOE Office of Scientific and Technical Information (OSTI.GOV)
Sahling, S.; Engert, J.; Gladun, A.
1981-12-01
The thermal boundary resistance at boundaries between monocrystalline sapphire and monocrystalline aluminum and between monocrystalline sapphire and polycrystalline aluminum has been measured in the temperature range from 0.1 to 6 K with aluminum in the superconducting and normal states. The ratio of the thermal boundary resistance of the aluminum monocrystals in the superconducting state to that in the normal state increases as the temperature is lowered, reaches a maximum at about 0.13 K, and decreases at still lower temperatures. At the maximum, the thermal boundary resistance in the superconducting state is two orders of magnitude larger than the resistance inmore » the normal state.« less
High-Temperature Mechanical Properties of Cr(3+) Doped Sapphire Fibers
NASA Technical Reports Server (NTRS)
Sayir, A.; QuispeCancapa, J. J.; deArellanoLopez, A. R.; Gray, Hugh R. (Technical Monitor)
2002-01-01
High-temperature slow-crack growth of single crystal 10 wt% Cr2O3 - Al2O3 (nominal composition) fibers has been studied by tensile rupture experiments at 1400 C, under different stressing rates (0.5 to 41.5 MPa/s). Slow-crack growth (SCG) is less pronounced with increasing Cr2O3. Rupture stresses increased with the stressing rate from 397 MPa to 515 MPa, resulting in a SCG exponent, N=19. The Cr2O3 composition was analyzed by Energy Dispersed X-Ray Spectra (EDS) and fracture surfaces were studied by scanning electron microscopy (SEM). Results are compared with previous studies on 100-300 ppm Cr3(+) doped sapphire fibers and on commercial sapphire fibers.
U-Groove aluminum weld strength improvement
NASA Technical Reports Server (NTRS)
Verderaime, V.; Vaughan, R.
1996-01-01
Though butt-welds are among the most preferred joining methods in aerostructures, their strength dependence on inelastic mechanics is generally the least understood. This study investigated experimental strain distributions across a thick aluminum U-grooved weld and identified two weld process considerations for improving the multipass weld strength. The extreme thermal expansion and contraction gradient of the fusion heat input across the groove tab thickness produces severe peaking, which induces bending under uniaxial loading. The filler strain-hardening decreased with increasing filler pass sequence, producing the weakest welds on the last pass side. Current welding schedules unknowingly compound these effects which reduce the weld strength. A depeaking index model was developed to select filler pass thicknesses, pass numbers, and sequences to improve depeaking in the welding process. The intent is to combine the strongest weld pass side with the peaking induced bending tension to provide a more uniform stress and stronger weld under axial tensile loading.
Senn, Olivier; Kilchenmann, Lorenz; von Georgi, Richard; Bullerjahn, Claudia
2016-01-01
This study tested the influence of expert performance microtiming on listeners' experience of groove. Two professional rhythm section performances (bass/drums) in swing and funk style were recorded, and the performances' original microtemporal deviations from a regular metronomic grid were scaled to several levels of magnitude. Music expert (n = 79) and non-expert (n = 81) listeners rated the groove qualities of stimuli using a newly developed questionnaire that measures three dimensions of the groove experience (Entrainment, Enjoyment, and the absence of Irritation). Findings show that music expert listeners were more sensitive to microtiming manipulations than non-experts. Across both expertise groups and for both styles, groove ratings were high for microtiming magnitudes equal or smaller than those originally performed and decreased for exaggerated microtiming magnitudes. In particular, both the fully quantized music and the music with the originally performed microtiming pattern were rated equally high on groove. This means that neither the claims of PD theory (that microtiming deviations are necessary for groove) nor the opposing exactitude hypothesis (that microtiming deviations are detrimental to groove) were supported by the data. PMID:27761117
Senn, Olivier; Kilchenmann, Lorenz; von Georgi, Richard; Bullerjahn, Claudia
2016-01-01
This study tested the influence of expert performance microtiming on listeners' experience of groove. Two professional rhythm section performances (bass/drums) in swing and funk style were recorded, and the performances' original microtemporal deviations from a regular metronomic grid were scaled to several levels of magnitude. Music expert ( n = 79) and non-expert ( n = 81) listeners rated the groove qualities of stimuli using a newly developed questionnaire that measures three dimensions of the groove experience ( Entrainment, Enjoyment , and the absence of Irritation ). Findings show that music expert listeners were more sensitive to microtiming manipulations than non-experts. Across both expertise groups and for both styles, groove ratings were high for microtiming magnitudes equal or smaller than those originally performed and decreased for exaggerated microtiming magnitudes. In particular, both the fully quantized music and the music with the originally performed microtiming pattern were rated equally high on groove. This means that neither the claims of PD theory (that microtiming deviations are necessary for groove) nor the opposing exactitude hypothesis (that microtiming deviations are detrimental to groove) were supported by the data.
Nanostructural engineering of nitride nucleation layers for GaN substrate dislocation reduction.
DOE Office of Scientific and Technical Information (OSTI.GOV)
Koleske, Daniel David; Lee, Stephen Roger; Lemp, Thomas Kerr
2009-07-01
With no lattice matched substrate available, sapphire continues as the substrate of choice for GaN growth, because of its reasonable cost and the extensive prior experience using it as a substrate for GaN. Surprisingly, the high dislocation density does not appear to limit UV and blue LED light intensity. However, dislocations may limit green LED light intensity and LED lifetime, especially as LEDs are pushed to higher current density for high end solid state lighting sources. To improve the performance for these higher current density LEDs, simple growth-enabled reductions in dislocation density would be highly prized. GaN nucleation layers (NLs)more » are not commonly thought of as an application of nano-structural engineering; yet, these layers evolve during the growth process to produce self-assembled, nanometer-scale structures. Continued growth on these nuclei ultimately leads to a fully coalesced film, and we show in this research program that their initial density is correlated to the GaN dislocation density. In this 18 month program, we developed MOCVD growth methods to reduce GaN dislocation densities on sapphire from 5 x 10{sup 8} cm{sup -2} using our standard delay recovery growth technique to 1 x 10{sup 8} cm{sup -2} using an ultra-low nucleation density technique. For this research, we firmly established a correlation between the GaN nucleation thickness, the resulting nucleation density after annealing, and dislocation density of full GaN films grown on these nucleation layers. We developed methods to reduce the nuclei density while still maintaining the ability to fully coalesce the GaN films. Ways were sought to improve the GaN nuclei orientation by improving the sapphire surface smoothness by annealing prior to the NL growth. Methods to eliminate the formation of additional nuclei once the majority of GaN nuclei were developed using a silicon nitride treatment prior to the deposition of the nucleation layer. Nucleation layer thickness was
NASA Technical Reports Server (NTRS)
Anton, R.; Poppa, H.; Flanders, D. C.
1982-01-01
The graphoepitaxial alignment of vapor-deposited discrete metal crystallites is investigated in the nucleation and growth stages and during annealing by in situ UHV/TEM techniques. Various stages of nucleation, growth and coalescence of vapor deposits of Au, Ag, Pb, Sn, and Bi on amorphous, topographically structured C substrates are analyzed by advanced dark-field techniques to detect preferred local orientations. It is found that the topography-induced orientation of metal crystallites depends strongly on their mobility and their respective tendency to develop pronounced crystallographic shapes. Lowering of the average surface free energies and increasing the crystallographic surface energy anisotropies cause generally improved graphoepitaxial alignments.
Bloom, Guillaume; Larat, Christian; Lallier, Eric; Lee-Bouhours, Mane-Si Laure; Loiseaux, Brigitte; Huignard, Jean-Pierre
2011-02-10
We have designed a high-efficiency array generator composed of subwavelength grooves etched in a GaAs substrate for operation at 4.5 μm. The method used combines rigorous coupled wave analysis with an optimization algorithm. The optimized beam splitter has both a high efficiency (∼96%) and a good intensity uniformity (∼0.2%). The fabrication error tolerances are numerically calculated, and it is shown that this subwavelength array generator could be fabricated with current electron beam writers and inductively coupled plasma etching. Finally, we studied the effect of a simple and realistic antireflection coating on the performance of the beam splitter.
Illyaskutty, Navas; Sreedhar, Sreeja; Sanal Kumar, G; Kohler, Heinz; Schwotzer, Matthias; Natzeck, Carsten; Pillai, V P Mahadevan
2014-11-21
MoO3 nanostructures have been grown in thin film form on five different substrates by RF magnetron sputtering and subsequent annealing; non-aligned nanorods, aligned nanorods, bundled nanowires, vertical nanorods and nanoslabs are formed respectively on the glass, quartz, wafer, alumina and sapphire substrates. The nanostructures formed on these substrates are characterized by AFM, SEM, GIXRD, XPS, micro-Raman, diffuse reflectance and photoluminescence spectroscopy. A detailed growth model for morphology alteration with respect to substrates has been discussed by considering various aspects such as surface roughness, lattice parameters and the thermal expansion coefficient, of both substrates and MoO3. The present study developed a strategy for the choice of substrates to materialize different types MoO3 nanostructures for future thin film applications. The gas sensing tests point towards using these MoO3 nanostructures as principal detection elements in gas sensors.
High-harmonic generation by field enhanced femtosecond pulses in metal-sapphire nanostructure
Han, Seunghwoi; Kim, Hyunwoong; Kim, Yong Woo; Kim, Young-Jin; Kim, Seungchul; Park, In-Yong; Kim, Seung-Woo
2016-01-01
Plasmonic high-harmonic generation (HHG) drew attention as a means of producing coherent extreme ultraviolet (EUV) radiation by taking advantage of field enhancement occurring in metallic nanostructures. Here a metal-sapphire nanostructure is devised to provide a solid tip as the HHG emitter, replacing commonly used gaseous atoms. The fabricated solid tip is made of monocrystalline sapphire surrounded by a gold thin-film layer, and intended to produce EUV harmonics by the inter- and intra-band oscillations of electrons driven by the incident laser. The metal-sapphire nanostructure enhances the incident laser field by means of surface plasmon polaritons, triggering HHG directly from moderate femtosecond pulses of ∼0.1 TW cm−2 intensities. The measured EUV spectra exhibit odd-order harmonics up to ∼60 nm wavelengths without the plasma atomic lines typically seen when using gaseous atoms as the HHG emitter. This experimental outcome confirms that the plasmonic HHG approach is a promising way to realize coherent EUV sources for nano-scale near-field applications in spectroscopy, microscopy, lithography and atto-second physics. PMID:27721374
Direct Substrate Identification with an Analog Sensitive (AS) Viral Cyclin-Dependent Kinase (v-Cdk).
Umaña, Angie C; Iwahori, Satoko; Kalejta, Robert F
2018-01-19
Viral cyclin-dependent kinases (v-Cdks) functionally emulate their cellular Cdk counterparts. Such viral mimicry is an established phenomenon that we extend here through chemical genetics. Kinases contain gatekeeper residues that limit the size of molecules that can be accommodated within the enzyme active site. Mutating gatekeeper residues to smaller amino acids allows larger molecules access to the active site. Such mutants can utilize bio-orthoganol ATPs for phosphate transfer and are inhibited by compounds ineffective against the wild type protein, and thus are referred to as analog-sensitive (AS) kinases. We identified the gatekeeper residues of the v-Cdks encoded by Epstein-Barr virus (EBV) and human cytomegalovirus (HCMV) and mutated them to generate AS kinases. The AS-v-Cdks are functional and utilize different ATP derivatives with a specificity closely matching their cellular ortholog, AS-Cdk2. The AS derivative of the EBV v-Cdk was used to transfer a thiolated phosphate group to targeted proteins which were then purified through covalent capture and identified by mass spectrometry. Pathway analysis of these newly identified direct substrates of the EBV v-Cdk extends the potential influence of this kinase into all stages of gene expression (transcription, splicing, mRNA export, and translation). Our work demonstrates the biochemical similarity of the cellular and viral Cdks, as well as the utility of AS v-Cdks for substrate identification to increase our understanding of both viral infections and Cdk biology.
Lin, Hui-Feng; Wu, Chun-Te; Chien, Wei-Cheng; Chen, Sheng-Wen; Kao, Hui-Ling; Chyi, Jen-Inn; Chen, Jyh-Shin
2005-05-01
Epitaxial AlN films have been grown on GaN/sapphire using helicon sputtering at 300 degrees C. The surface acoustic wave (SAW) filters fabricated on AlN/GaN/sapphire exhibit more superior characteristics than those made on GaN/sapphire. This composite structure of AlN on GaN may bring about the development of high-frequency components, which integrate and use their semiconducting, optoelectronic, and piezoelectric properties.
2002-12-04
The Tharsis Montes region on Mars is a major center of volcanic and tectonic activity. The channel in this image from NASA Mars Odyssey is west of the relatively small volcano called Biblis Patera although it shows no obvious relationship to that volcano. Instead, it may be related to the more distant, but more massive volcano Olympus Mons to the north. The channel may have hosted flowing lava at one time but now contains a material that has eroded into an impressive ridge-and-groove pattern. These features may be yardangs, landforms produced from the erosion by wind of sedimentary material. http://photojournal.jpl.nasa.gov/catalog/PIA04020
NASA Astrophysics Data System (ADS)
Yu, Yingying; Sun, Bo
2018-07-01
We investigate the multi-resonance coupling of inverted quadrangular frustum pyramid (IQFP) groove metal arrays at terahertz frequencies. The surface plasmon resonance (SPR) and groove resonance are induced, resulting in resonance coupling. The dipole of the groove resonance drives the quadrupole of the SPR and creates a sharp Fano-like resonance. The effects of geometry parameters including the width (at the bottom) and height are analyzed in detail. The results show that with the decrease in the sidewall slope of the groove, the confinement of the groove region on the electromagnetic field decreases, thereby increasing the resonance coupling. The Fano-like resonance is enhanced. The sensitivity and quality factor are discussed. The results show that the Fano-like resonance has high sensitivity and quality factor. With the increase in the sidewall slope of the groove, the sensitivity increases, and the quality factor decreases. The results show that the Fano-like resonance of IQFP groove metal arrays has a significant potential for biological monitoring and sensing.
Ti:sapphire-pumped diamond Raman laser with sub-100-fs pulse duration.
Murtagh, Michelle; Lin, Jipeng; Mildren, Richard P; Spence, David J
2014-05-15
We report a synchronously pumped femtosecond diamond Raman laser operating at 895 nm with a 33% slope efficiency. Pumped using a mode-locked Ti:sapphire laser at 800 nm with a duration of 170 fs, the bandwidth of the Stokes output is broadened and chirped to enable subsequent pulse compression to 95 fs using a prism pair. Modeling results indicate that self-phase modulation drives the broadening of the Stokes spectrum in this highly transient laser. Our results demonstrate the potential for Raman conversion to extend the wavelength coverage and pulse shorten Ti:sapphire lasers.
Ti:Sapphire micro-structures by femtosecond laser inscription: Guiding and luminescence properties
NASA Astrophysics Data System (ADS)
Ren, Yingying; Jiao, Yang; Vázquez de Aldana, Javier R.; Chen, Feng
2016-08-01
We report on the fabrication of buried cladding waveguides with different diameters in a Ti:Sapphire crystal by femtosecond laser inscription. The propagation properties are studied, showing that the cladding waveguides could support near- to mid-infrared waveguiding at both TE and TM polarizations. Confocal micro-photoluminescence experiments reveal that the original fluorescence properties in the waveguide region are very well preserved, while it suffers from a strong quenching at the centers of laser induced filaments. Broadband waveguide fluorescence emissions with high efficiency are realized, indicating the application of the cladding waveguides in Ti:Sapphire as compact broadband luminescence sources in biomedical fields.
U-shaped micro-groove fiber based on femtosecond laser processing for humidity sensing
NASA Astrophysics Data System (ADS)
Fu, Gui; Ma, Li-li; Su, Fu-fang; Shi, Meng
2018-05-01
A novel optical fiber sensor with a U-shaped micro-groove structure ablated by femtosecond laser on single-mode fiber for measuring air relative humidity (RH) is reported in this paper. In order to improve the accuracy of sensor, a graphene oxide (GO)/polyvinyl alcohol (PVA) composite film is coated on the surface of micro-groove structure. In the U-shaped micro-groove structure, the remaining core and micro-cavity in the micro-groove make up two major optical propagation paths, forming a Mach-Zehnder interferometer (MZI). The sensor has a good linear response within the RH range of 30%—85%, and the maximum sensitivity can reach 0.638 1 nm/%RH. The effect of temperature on the overall performance of the humidity sensor is also investigated. As a new type of all-fiber device, the sensor shows excellent sensitivity and stability.
Zhao, Guijuan; Wang, Lianshan; Yang, Shaoyan; Li, Huijie; Wei, Hongyuan; Han, Dongyue; Wang, Zhanguo
2016-02-10
We report the anisotropic structural and optical properties of semi-polar (11-22) GaN grown on m-plane sapphire using a three-step growth method which consisted of a low temperature AlN buffer layer, followed by a high temperature AlN buffer layer and GaN growth. By introducing double AlN buffer layers, we substantially improve the crystal and optical qualities of semi-polar (11-22) GaN, and significantly reduce the density of stacking faults and dislocations. The high resolution x-ray diffraction measurement revealed that the in-plane anisotropic structural characteristics of GaN layer are azimuthal dependent. Transmission electron microscopy analysis showed that the majority of dislocations in the GaN epitaxial layer grown on m-sapphire are the mixed-type and the orientation of GaN layer was rotated 58.4° against the substrate. The room temperature photoluminescence (PL) spectra showed the PL intensity and wavelength have polarization dependence along parallel and perpendicular to the [1-100] axis (polarization degrees ~ 0.63). The realization of a high polarization semi-polar GaN would be useful to achieve III-nitride based lighting emission device for displays and backlighting.
1988-03-01
Results, ATR-86A(8501)-1, The Aerospace Corporation: El Segundo, Calif. (20 May 1987). 3. D. Neaman , W. Shedd, and B. Buchanan, "Permanently Ionizing...Radiation Effects in Dielectrically Bounded Field-Effect Transistors," IEEE Trans.. Nucl. Sci. NS-20 [6], 158-165 (Decembe. 1973). 4. D. Neaman , W. Shedd...1974). 5. D. Neaman , W. Shedd, and B. Buchanan, "Silicon-Sapphire Interface Charge Trapping -- Effects of Sapphire Type and Epi Growth Conditions
Neurosurgery contact handheld probe based on sapphire shaped crystal
NASA Astrophysics Data System (ADS)
Shikunova, I. A.; Stryukov, D. O.; Rossolenko, S. N.; Kiselev, A. M.; Kurlov, V. N.
2017-01-01
A handheld contact probe based on sapphire shaped crystal is developed for intraoperative spectrally-resolved optical diagnostics, laser coagulation and aspiration of malignant brain tissue. The technology was integrated into the neurosurgical workflow for intraoperative real-time identification and removing of invasive brain cancer.
Mathematical modeling of a Ti:sapphire solid-state laser
NASA Technical Reports Server (NTRS)
Swetits, John J.
1987-01-01
The project initiated a study of a mathematical model of a tunable Ti:sapphire solid-state laser. A general mathematical model was developed for the purpose of identifying design parameters which will optimize the system, and serve as a useful predictor of the system's behavior.
The resistance of high frequency inductive welded pipe to grooving corrosion in salt water
DOE Office of Scientific and Technical Information (OSTI.GOV)
Duran, C.; Triess, E.; Herbsleb, G.
1986-09-01
When exposed to neutral, salt-containing waters, electric resistant welded pipe in carbon and low alloy steels with increased sulfur contents may suffer preferential corrosion attack in the weld area. Because of its appearance, this type of corrosion is called grooving corrosion. The susceptibility to grooving corrosion may be determined and quantitatively described by means of an accelerated potentiostatic exposure test. The importance of type, concentration, and temperature of the electrolytic solution; potential; test duration; and the sulfur content of the steel in the accelerated corrosion test and the susceptibility of steels to grooving corrosion are described. Line pipe in highmore » frequency inductive (HFI) welded carbon and low alloy steels are resistant to grooving corrosion particularly because of their low sulfur content.« less
Comparative evaluation of three heat transfer enhancement strategies in a grooved channel
NASA Astrophysics Data System (ADS)
Herman, C.; Kang, E.
Results of a comparative evaluation of three heat transfer enhancement strategies for forced convection cooling of a parallel plate channel populated with heated blocks, representing electronic components mounted on printed circuit boards, are reported. Heat transfer in the reference geometry, the asymmetrically heated parallel plate channel, is compared with that for the basic grooved channel, and the same geometry enhanced by cylinders and vanes placed above the downstream edge of each heated block. In addition to conventional heat transfer and pressure drop measurements, holographic interferometry combined with high-speed cinematography was used to visualize the unsteady temperature fields in the self-sustained oscillatory flow. The locations of increased heat transfer within one channel periodicity depend on the enhancement technique applied, and were identified by analyzing the unsteady temperature distributions visualized by holographic interferometry. This approach allowed gaining insight into the mechanisms responsible for heat transfer enhancement. Experiments were conducted at moderate flow velocities in the laminar, transitional and turbulent flow regimes. Reynolds numbers were varied in the range Re=200-6500, corresponding to flow velocities from 0.076 to 2.36m/s. Flow oscillations were first observed between Re=1050 and 1320 for the basic grooved channel, and around Re=350 and 450 for the grooved channels equipped with cylinders and vanes, respectively. At Reynolds numbers above the onset of oscillations and in the transitional flow regime, heat transfer rates in the investigated grooved channels exceeded the performance of the reference geometry, the asymmetrically heated parallel plate channel. Heat transfer in the grooved channels enhanced with cylinders and vanes showed an increase by a factor of 1.2-1.8 and 1.5-3.5, respectively, when compared to data obtained for the basic grooved channel; however, the accompanying pressure drop penalties also
User's Manual for Thermal Analysis Program of Axially Grooved Heat Pipe (HTGAP)
NASA Technical Reports Server (NTRS)
Kamotani, Y.
1978-01-01
A computer program that numerically predicts the steady state temperature distribution inside an axially grooved heat pipe wall for a given groove geometry and working fluid under various heat input and output modes is described. The program computes both evaporator and condenser film coefficients. The program is able to handle both axisymmetric and nonaxisymmetric heat transfer cases. Non-axisymmetric heat transfer results either from non-uniform input at the evaporator or non-uniform heat removal from the condenser, or from both. The presence of a liquid pool in the condenser region under one-g condition also causes non-axisymmetric heat transfer, and its effect on the pipe wall temperature distribution is included in the present program. The hydrodynamic aspect of an axially grooved heat pipe is studied in the Groove Analysis Program (GAP). The present thermal analysis program assumes that the GAP program (or other similar programs) is run first so that the heat transport limit and optimum fluid charge of the heat pipe are known a priori.
Powell, Nathaniel J; Jang, Albert; Park, Jang-Yeon; Valette, Julien; Garwood, Michael; Marjańska, Małgorzata
2015-01-01
To introduce a new outer volume suppression (OVS) technique that uses a single pulse and rotating gradients to accomplish frequency-swept excitation. This new technique, which is called gradient rotating outer volume excitation (GROOVE), produces a circular or elliptical suppression band rather than suppressing the entire outer volume. Theoretical and k-space descriptions of GROOVE are provided. The properties of GROOVE were investigated with simulations, phantom, and human experiments performed using a 4T horizontal bore magnet equipped with a TEM coil. Similar suppression performance was obtained in phantom and human brain using GROOVE with circular and elliptical shapes. Simulations indicate that GROOVE requires less SAR and time than traditional OVS schemes, but traditional schemes provide a sharper transition zone and less residual signal. GROOVE represents a new way of performing OVS in which spins are excited temporally in space on a trajectory that can be tailored to fit the shape of the suppression region. In addition, GROOVE is capable of suppressing tailored regions of space with more flexibility and in a shorter period of time than conventional methods. GROOVE provides a fast, low SAR alternative to conventional OVS methods in some applications (e.g., scalp suppression). © 2014 Wiley Periodicals, Inc.
NASA Astrophysics Data System (ADS)
Zhang, Jie; Ding, Lan; Liang, Changneng; Xiao, Yiming; Xu, Wen
2017-11-01
We develop a multiple reflection model (MRM) for the examination of infrared transmission properties of a graphene/substrate system. The incident angle and the multiple reflection beams in the substrate with finite thickness are taken into consideration. The model can be applied to predict the optical responses of graphene/substrate systems or to extract the real part of the optical conductance of graphene from the experimental measurement. As an example, we calculate the relative transmittance of graphene/quartz and graphene/sapphire systems by using MRM and provide an experimental verification in the near-infrared range. The measured results show good agreement with the calculated ones. Our method can be easily extended to accurately and non-invasively identify the layer numbers of other 2D materials, and assess the quality of them.
Femtosecond laser pulse distortion in Ti:sapphire multipass amplifier by atomic phase shifts
NASA Astrophysics Data System (ADS)
Hwang, Seungjin; Jeong, Jihoon; Cho, Seryeyohan; Lee, Jongmin; Yu, Tae Jun
2017-11-01
We have derived modified Frantz-Nodvik equations that simultaneously account for atomic phase shift (APS) and gain depletion as the chirped laser pulse passes through a gain medium, and have analyzed the effect of temporal pulse distortion in a Ti:sapphire multipass amplifier chain. The combination of APS and gain depletion distorted a temporal pulse and decreased the peak power. The pulse width increased from 21.3 fs to 22.8 fs and the peak power reduced to 89% for the PW class Ti:sapphire CPA laser system in the particular conditions.
Müller, André; Jensen, Ole Bjarlin; Unterhuber, Angelika; Le, Tuan; Stingl, Andreas; Hasler, Karl-Heinz; Sumpf, Bernd; Erbert, Götz; Andersen, Peter E; Petersen, Paul Michael
2011-06-20
For the first time a single-pass frequency doubled DBR-tapered diode laser suitable for pumping Ti:sapphire lasers generating ultrashort pulses is demonstrated. The maximum output powers achieved when pumping the Ti:sapphire laser are 110 mW (CW) and 82 mW (mode-locked) respectively at 1.2 W of pump power. This corresponds to a reduction in optical conversion efficiencies to 75% of the values achieved with a commercial diode pumped solid-state laser. However, the superior electro-optical efficiency of the diode laser improves the overall efficiency of the Ti:sapphire laser by a factor > 2. The optical spectrum emitted by the Ti:sapphire laser when pumped with our diode laser shows a spectral width of 112 nm (FWHM). Based on autocorrelation measurements, pulse widths of less than 20 fs can therefore be expected.
Orientation of Vanadium Dioxide Grains on Various Substrates
NASA Astrophysics Data System (ADS)
Rivera, Felipe; Davis, Robert; Vanfleet, Richard
2010-10-01
Crystalline vanadium dioxide VO2 experiences a fast and reversible semiconductor-to-metal structural phase transition near 68^oC. The changes exhibited during this phase transition comprise a well known change in resistivity of several orders of magnitude, as well as a significant drop in optical transmittance in the infrared. Due to the changes in these optical and electronic properties, vanadium dioxide shows promise as a material to be used in many applications ranging from thermochromic window coatings to optoelectronic devices. However, since there is a structural component to the phase transition of VO2, it is of interest to study the orientation of the crystalline grains deposited. Substrates such as glass, SiO2, Sapphire, and TiO2 have been used for the deposition of this material. We used orientation imaging microscopy to study and characterize the orientation of the grains deposited on several of these substrates. Here we present results on this study.
NASA Astrophysics Data System (ADS)
Gresh, Nohad; Perrée-fauvet, Martine
1999-03-01
On the basis of theoretical computations, we have recently synthesised [Perrée-Fauvet, M. and Gresh, N., Tetrahedron Lett., 36 (1995) 4227] a bisarginyl conjugate of a tricationic porphyrin (BAP), designed to target, in the major groove of DNA, the d(GGC GCC)2 sequence which is part of the primary binding site of the HIV-1 retrovirus site [Wain-Hobson, S. et al., Cell, 40 (1985) 9]. In the theoretical model, the chromophore intercalates at the central d(CpG)2 step and each of the arginyl arms targets O6/N7belonging to guanine bases flanking the intercalation site. Recent IR and UV-visible spectroscopic studies have confirmed the essential features of these theoretical predictions [Mohammadi, S. et al., Biochemistry, 37 (1998) 6165]. In the present study, we compare the energies of competing intercalation modes of BAP to several double-stranded oligonucleotides, according to whether one, two or three N- methylpyridinium rings project into the major groove. Correspondingly, three minor groove binding modes were considered, the arginyl arms now targeting N3, O2 sites belonging to the purine or pyrimidine bases flanking the intercalation site. This investigation has shown that: (i) in both the major and minor grooves, the best-bound complexes have the three N-methylpyridinium rings in the groove opposite to that of the phenyl group bearing the arginyl arms; (ii) major groove binding is preferred over minor groove binding by a significant energy (29 kcal/mol); and (iii) the best-bound sequence in the major groove is d(GGC GCC)2 with two successive guanines upstream from the intercalation. On the other hand, due to the flexibility of the arginyl arms, other GC-rich sequences have close binding energies, two of them being less stable than it by less than 8 kcal/mol. These results serve as the basis for the design of derivatives of BAP with enhanced sequence selectivities in the major groove.
Epitaxial corundum-VTiO 3 thin films grown on c-cut sapphire
Kramer, Alan; Sutter, Eli; Su, Dong; ...
2017-04-12
Corundum structured VTiO 3 has been grown as epitaxial films on c-cut sapphire by laser molecular beam epitaxy. The properties of the film were characterized by reflection high energy electron diffraction, x-ray diffraction, transmission electron microscopy, and photoemission spectroscopy. All the structural probes clearly indicate the corundum structure of the film. X-ray photoemission spectroscopy (XPS) indicates that V is in a 3+ charge state implying that Ti also needs to adopt a 3+ charge state in order for the corundum structure to form. However, the Ti-2p XPS, while clearly broadened to the lower binding energy side compared to TiO 2,more » also exhibits a pronounced Ti 4+ component. This is tentatively assigned to a final state effect in XPS measurements and not as the true cation state. In conclusion, the valence band spectra show occupation of 3d metal states that resemble more closely those of Ti 2O 3 than for V 2O 3, suggesting that only the a1g molecular states are occupied.« less
Spiral groove seal. [for hydraulic rotating shaft
NASA Technical Reports Server (NTRS)
Ludwig, L. P. (Inventor)
1973-01-01
Mating flat surfaces inhibit leakage of a fluid around a stationary shaft. A spiral groove pattern produces a pumping action toward the fluid when the shaft rotates which prevents leakage while a generated hydraulic lifting force separates the mating surfaces to minimize wear.
Bhandaru, Nandini; Karim, Alamgir; Mukherjee, Rabibrata
2017-07-21
Substrate pattern guided self-organization of ultrathin and confined polymeric films on a topographically patterned substrate is a useful approach for obtaining ordered meso and nano structures over large areas, particularly if the ordering is achieved during film preparation itself, eliminating any post-processing such as thermal or solvent vapor annealing. By casting a dilute solution of two immiscible polymers, polystyrene (PS) and polymethylmethacrylate (PMMA), from a common solvent (toluene) on a topographically patterned substrate with a grating geometry, we show the formation of self-organized meso patterns with various degrees of ordering. The morphology depends on both the concentration of the dispensed solution (C n ) and the blend composition (R B ). Depending on the extent of dewetting during spin coating, the final morphologies can be classified into three distinct categories. At a very low C n the solution dewets fully, resulting in isolated polymer droplets aligned along substrate grooves (Type 1). Type 2 structures comprising isolated threads with aligned phase separated domains along each substrate groove are observed at intermediate C n . A continuous film (Type 3) is obtained above a critical concentration (C n *) that depends on R B . While the extent of ordering of the domains gradually diminishes with an increase in film thickness for Type 3 patterns, the size of the domains remains much smaller than that on a flat substrate, resulting in significant downsizing of the features due to the lateral confinement imposed on the phase separation process by the topographic patterns. Finally, we show that some of these structures exhibit excellent broadband anti-reflection (AR) properties.