Deposition and characterization of stoichiometric films of V2O5 on Pd(111)

NASA Astrophysics Data System (ADS)

Feng, Xu; Abdel-Rahman, Mohammed K.; Kruppe, Christopher M.; Trenary, Michael

2017-10-01

A simple and efficient method has been used to grow V2O5 thin films on Pd(111) at a substrate temperature of 300 K through physical vapor deposition by heating a fine powder of V2O5 in a non-oxidative, UHV environment. X-ray photoelectron spectroscopy (XPS), reflection absorption infrared spectroscopy (RAIRS) and low energy electron diffraction (LEED) were used to characterize the thin films. When the as-grown films exceed a minimum thickness, characteristic features of V2O5 were revealed by XPS and RAIRS, which confirms the presence of stoichiometric V2O5. LEED indicates no long range order of the as-grown films at 300 K. Annealing to temperatures between 600 and 700 K causes a reduction of V2O5 to VO2 as identified by XPS and the formation of ordered structures as determined by LEED, and VO2 is predominant after annealing to 800 K. After further annealing to 1000 K, only an ordered form of V2O3 is present on Pd(111).

Effect of nickel seed layer on growth of α-V2O5 nanostructured thin films

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat; Singh, Megha; Reddy, G. B.

2015-08-01

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V2O5) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ˜ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V2O5 film deposited on both substrates are carried out by SEM, revealed that features of V2O5 NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

Impression of plasma voltage on growth of α-V{sub 2}O{sub 5} nanostructured thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar Kumar, E-mail: rkrksharma6@gmail.com; Kumar, Prabhat; Reddy, G. B.

2015-06-24

In this communication, we synthesized vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NST{sub s}) accompanied with nanoflakes/ nanoplates on the Ni-coated glass substrates employing plasma assisted sublimation process (PASP) as a function of plasma voltage (V{sub p}). The effect of plasma voltage on structural, morphological, compositional, and vibrational properties have been studied systematically. The structural analysis divulged that all films deposited at different V{sub p} have pure orthorhombic phase, no impurity phase is detected under resolution limit of XRD and XPS. The morphological studies of samples is carried out by SEM, revealed that features as well as alignment ofmore » V{sub 2}O{sub 5} NST{sub s} is greatly monitored by V{sub p} and the film possessing the best features is obtained at 2500volt. In addition, XPS results reveal that V{sup 5+} oxidation state is the most prominent state in sample V{sub 2}, which represents better stoichiometric nature of film. The vibrational study of all samples is performed by FTIR and strongly support the XRD observations. All the results are in consonance with each other.« less

Influence of solution deposition rate on properties of V2O5 thin films deposited by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Abd-Alghafour, N. M.; Ahmed, Naser M.; Hassan, Zai; Mohammad, Sabah M.

2016-07-01

Vanadium oxide (V2O5) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl3 in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in the macrostrain resulted in an improvement in the films' crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V2O5 film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).

The effect of laser energy on V2O5 thin film growth prepared by laser assisted molecular beam deposition

NASA Astrophysics Data System (ADS)

Abdel Samad, B.; Ashrit, P. V.

2014-09-01

Vanadium pentoxide V2O5 thin films were grown on glass substrates by the LAMBD deposition system with different laser energies. The structure, composition and optical properties of the films have been investigated with atomic force microscopy, x-ray photoemission spectroscopy, ellipsometry and the transmittance analysis. Upon the increase of laser energy, the results showed that the changes in the optical constants are consistent with the thickness changes of the film. The refractive index increases and the absorption coefficient increases when the laser energy increases. The AFM analysis showed a change of the roughness and structure of the deposited films at different laser energies. The prepared films deposited by LAMBD showed interesting properties with correct V2O5 phase without need of annealing after deposition.

Effect of nickel seed layer on growth of α-V{sub 2}O{sub 5} nanostructured thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Rabindar Kumar; Kant, Chandra; Kumar, Prabhat

In this communication, we reported the role of Ni seed layer on the growth of vanadium pentoxide (α-V{sub 2}O{sub 5}) nanostructured thin films (NSTs) using plasma assisted sublimation process (PASP). Two different substrates, simple glass substrate and the Ni coated glass substrate (Ni thickness ∼ 100 nm) are employing in the present work. The influence of seed layer on structural, morphological, and vibrational properties have been studied systematically. The structural analysis divulged that both films deposited on simple glass as well as on Ni coated glass shown purely orthorhombic phase, no other phases are detected. The morphological studies of V{sub 2}O{submore » 5} film deposited on both substrates are carried out by SEM, revealed that features of V{sub 2}O{sub 5} NSTs is completely modified in presence of Ni seed layer and the film possessing the excellent growth of nanorods (NRs) on Ni coated glass rather than simple glass. The HRTEM analysis of NRs is performed at very high magnification, shows very fine fringe pattern, which confirmed the single crystalline nature of nanorods. The vibrational study of NRs is performed using micro-Raman spectroscopy, which strongly support the XRD observations.« less

Synthesis and electronic properties of Fe2TiO5 epitaxial thin films

NASA Astrophysics Data System (ADS)

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; Hikita, Yasuyuki

2018-05-01

We investigate the growth phase diagram of pseudobrookite Fe2TiO5 epitaxial thin films on LaAlO3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20-80 Ω cm, which are significantly lower than α-Fe2O3, making Fe2TiO5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe2TiO5 in oxide heterostructures for photocatalytic and photoelectrochemical applications.

Studies on annealed ZnO:V thin films deposited by nebulised spray pyrolysis method

NASA Astrophysics Data System (ADS)

Malini, D. Rachel

2018-04-01

Structural, optical and photoluminescence properties of annealed ZnO:V thin films deposited by nebulized spray pyrolysis technique by varying vanadium concentration are studied. Thickness of thin films varies from 1.52µm to 7.78µm. V2O5, VO2 and ZnO peaks are observed in XRD patterns deposited with high vanadium concentration and the intensity of peaks corresponding to ZnO decreases in those samples. Morphological properties were studied by analysing SEM images and annealed thin films deposited at ZnO:V = 50:50 possess dumb bell shape grains. Emission peaks corresponding to both Augur transition and deep level transition are observed in the PL spectra of the samples.

Plasma assisted facile synthesis of vanadium oxide (V3O7) nanostructured thin films

NASA Astrophysics Data System (ADS)

Singh, Megha; Saini, Sujit K.; Kumar, Prabhat; Sharma, Rabindar K.; Reddy, G. B.

2018-05-01

Vanadium oxides nanostructured thin films are synthesized using plasma assisted sublimation process. The effect of temperatures on growth of V2O5 and V3O7 thin films is studied. Scanning electron micrographs shows different morphologies are obtained at different temperatures i.e. at 450 °C nano cubes-like structures are obtained, whereas at 550 °C and 650 °C nanorods are obtained. Sample deposited at 450 °C is entirely composed of V2O5 and sample at higher temperatures are composed of mixed phase of vanadium oxides i.e. V2O5 and V3O7. As temperature increased, so the content of V3O7 in the sample is increased as confirmed by XRD and Raman analyses.

Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

NASA Astrophysics Data System (ADS)

Sengodan, R.; Shekar, B. Chandar; Sathish, S.

Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.

Synthesis and electronic properties of Fe 2TiO 5 epitaxial thin films

DOE PAGES

Osada, Motoki; Nishio, Kazunori; Hwang, Harold Y.; ...

2018-05-02

Here, we investigate the growth phase diagram of pseudobrookite Fe 2TiO 5 epitaxial thin films on LaAlO 3 (001) substrates using pulsed laser deposition. Control of the oxygen partial pressure and temperature during deposition enabled selective stabilization of (100)- and (230)-oriented films. In this regime, we find an optical gap of 2.1 eV and room temperature resistivity in the range of 20–80 Ω cm, which are significantly lower than α-Fe 2O 3, making Fe 2TiO 5 potentially an ideal inexpensive visible-light harvesting semiconductor. These results provide a basis to incorporate Fe 2TiO 5 in oxide heterostructures for photocatalytic and photoelectrochemicalmore » applications.« less

Reduction of V2O5 thin films deposited by aqueous sol-gel method to VO2(B) and investigation of its photocatalytic activity

NASA Astrophysics Data System (ADS)

Monfort, Olivier; Roch, Tomas; Satrapinskyy, Leonid; Gregor, Maros; Plecenik, Tomas; Plecenik, Andrej; Plesch, Gustav

2014-12-01

A way of preparation of VO2(B) thin films by reduction of V2O5 films synthesized from an aqueous sol-gel system has been developed and photocatalytic properties of the obtained films were studied. The reduction was performed by annealing of the V2O5 film in vacuum as well as in H2/Ar atmosphere, which was followed by temperature dependent XRD. It has been shown that the reduction is influenced by the layered-structure of the vanadium oxides. It is a two-step process, where the mixed-valence vanadium oxide V4O9 is first formed before reaching the VO2(B) phase. The film microstructure was characterized by SEM and AFM and the valence states of vanadium in VO2(B) films were evaluated by XPS. The VO2(B) polymorph shows an energy band-gap around 2.8 eV and it exhibits photocatalytic properties. It was measured by following the degradation of rhodamine B under UVA as well as metalhalogenide lamp irradiation, which has similar spectral distribution as natural sunlight. The VO2(B) films show distinct photoactivities under both lamps, although they were found to be more active under the UVA irradiation. The film annealed under reducing hydrogen atmosphere, which exhibits higher granularity and surface roughness, shows higher photoactivity than the vacuum-annealed film.

Influence of solution deposition rate on properties of V{sub 2}O{sub 5} thin films deposited by spray pyrolysis technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abd–Alghafour, N. M., E-mail: na2013bil@gmail.com; Ahmed, Naser M.; Hassan, Zai

Vanadium oxide (V{sub 2}O{sub 5}) thin films were deposited on glass substrates by using a cost-efficient spray pyrolysis technique. The films were grown at 350° through thermal decomposition of VCl{sub 3} in deionized water with different solution spray rates. The high resolution X-ray diffraction results revealed the formation of nanocrystalline films having orthorhombic structures with preferential orientation along (101) direction. The spray rate influenced the surface morphology and crystallite size of the films. The crystallite size was found to increase whereas the micro-strain was decreased by increasing the spray deposition rates. The increase in crystallite size and decrease in themore » macrostrain resulted in an improvement in the films’ crystallinity. The UV-Visible spectroscopy analysis indicated that the average transmittance of all films lies in the range 75-80 %. The band gap of V{sub 2}O{sub 5} film was decreased from 2.65 to 2.46 eV with increase of the spray deposition rate from 5 ml/min to 10 ml/min. first, second, and third level headings (first level heading).« less

Sputtering Deposition of Sandwich-Structured V2O5/Metal (V, W)/V2O5 Multilayers for the Preparation of High-Performance Thermally Sensitive VO2 Thin Films with Selectivity of VO2 (B) and VO2 (M) Polymorph.

PubMed

Liu, Hengwu; Wan, Dongyun; Ishaq, Ahmad; Chen, Lanli; Guo, Beibei; Shi, Siqi; Luo, Hongjie; Gao, Yanfeng

2016-03-01

For specific application to an uncooled infrared detector, VO2 thin films should have a series of characteristics including purposefully chosen polymorphs, accurate stoichiometry, phase stabilization, a high temperature-coefficient of resistance (TCR), and suitable square-resistance. This work reports controllable preparation of high-performance VO2 films via post annealing of a sandwich-structured V2O5/metal (V, W)/V2O5 multilayer precursor, which was deposited by RF magnetron sputtering. This sandwich structure can dynamically regulate oxygen contents and doping element levels in the films, enabling us to achieve accurate regulation of stoichiometry and polymorphs. The precursor films undergo a B to M phase transition depending on the quantity of the metal layers. At the thickness of the metal layer below a limitation, the resulting film after heat treatment was VO2 (B), and above the limitation, the product was VO2 (M). The optical modulation of the VO2 (M) in the near-infrared region can be tuned from 1.2 to 39.8% (ΔT2000 nm). TCR values can range from -1.89 to -4.29%/K and the square-resistances at room temperature (R0) from 69.68 to 12.63 kΩ. The simplicity in phase regulation of the present method and the superior optical and electrical properties of the films may allow its wide applications in thermo-opto-electro sensing devices.

Sb:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Bhadrapriya B., C.; Varghese, Anitta Rose; Amarendra, G.; Hussain, Shamima

2018-04-01

Transparent thin films of antimony doped SnO2 have been synthesized and characterized using optical spectroscopy, XRD, RAMAN and FESEM. The band gap of Sb doped tin oxide thin film samples were found to vary from 3.26 eV to 3.7 eV. The XRD peaks showed prominent rutile SnO2 peaks with diminished intensity due to antimony doping. A wide band in the range 550-580 cm-1 was observed in raman spectra and is a feature of nano-sized SnO2. SEM images showed flower-like structures on thin film surface, a characteristic feature of antimony.

Improved ferroelectric polarization of V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films prepared by a chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, D. P.; University of Science and Technology of China, Hefei 230026; Yang, J., E-mail: jyang@issp.ac.cn

We prepared V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films on Pt/Ti/SiO{sub 2}/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films. The Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2P{sub r}) over 30 μC/cm{sup 2} in Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film compared with 10 μC/cm{sup 2} in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin film. It ismore » demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n = 5 Aurivillius thin films.« less

Structure and enhanced thermochromic performance of low-temperature fabricated VO2/V2O3 thin film

NASA Astrophysics Data System (ADS)

Sun, Guangyao; Cao, Xun; Gao, Xiang; Long, Shiwei; Liang, Mengshi; Jin, Ping

2016-10-01

For VO2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. Here, the thermochromic films of VO2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V2O3 interlayer. V2O3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO2 film. The VO2/V2O3 films display high solar modulating ability and narrow hysteresis loop. Our data can serve as a promising point for industrial production with high degree of crystallinity at a low temperature.

The optical and electrochemical properties of electrochromic films: WO3+xV2O5

NASA Astrophysics Data System (ADS)

Li, Zhuying; Liu, Hui; Liu, Ye; Yang, Shaohong; Liu, Yan; Wang, Chong

2010-05-01

Since Deb's experiment in 1973 on the electrochromic effect, transmissive electrochromic films exhibit outstanding potential as energy efficient window controls which allow dynamic control of the solar energy transmission. These films with non-volatile memory, once in the coloured state, remain in the same state even after removal of the field. The optical and electrochemical properties of electrochromic films using magnetron sputter deposition tungsten oxide thin films and vanadium oxide doped tungsten-vanadium oxide thin films on ITO coated glass were investigated. From the UV region of the transmittance spectra, the optical band gap energy from the fundamental absorption edge can be determined. And the Cyclic voltammograms of these thin films in 1 mol LiClO4 propylene carbonate electrolyte (LIPC) were measured and analysed. The anode electrochromic V2O5 doped cathode electrochromic WO3 could make films colour changing while the transmittance of films keeped invariance. These performance characteristics make tungstenvanadium oxide colour changeably thin films are suitable for electrochromic windows applications.

Effect of V2O5 concentration on structural and optical properties of WO3 thin films prepared by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Meenakshi, M.; Gowthami, V.; Perumal, P.; Sanjeeviraja, C.

2014-10-01

Thin films of WO3 and V2O5 doped WO3 were coated on glass substrates using sputtering targets of diameter 50mm and thickness 5mm with RF power of 100 W and source to substrate distance of 60mm at room temperature for various V2O5 compositions (1, 2, 4, 6 and 10 %). XRD studies revealed that as deposited films were amorphous for all compositions. Morphological studies like Laser Raman and SEM too confirmed this amorphous nature of films. Refractive index (n) and the extinction coefficient (k) were calculated from the optical spectra such as transmittance and absorbance measured over the wavelength range of 200 to 2500nm. The films exhibited transmittance in the range of 80 to 90% in the UV-Vis-NIR region. Optical band gaps were calculated for both direct and indirect transitions. The optical parameters such as optical dispersion energies Eo and Ed, the average dielectric constant (ɛ), average values of the oscillator strength (So), wavelength of single oscillator (λo), and plasma frequency (ωp) were also calculated.

Zirconium doped TiO2 thin films deposited by chemical spray pyrolysis

NASA Astrophysics Data System (ADS)

Juma, A.; Oja Acik, I.; Oluwabi, A. T.; Mere, A.; Mikli, V.; Danilson, M.; Krunks, M.

2016-11-01

Chemical spray pyrolysis (CSP) is a flexible deposition technique that allows for mixing of the precursor solutions in different proportions suitable for doping thin films. The CSP method was used to dope TiO2 thin films with Zr by adding zirconium(IV) acetylacetonate into a solution of titanium(IV) isopropoxide in ethanol stabilized by acetylacetone at [Zr]/[Ti] of 0, 5, 10 and 20 at%. The Zr-doped TiO2 thin films were uniform and homogeneous showing much smaller grains than the undoped TiO2 films. Zr stabilized the anatase phase to temperatures above 800 °C depending on Zr concentration in the spray solution. The concentration of Zr determined by XPS was 6.4 at% for the thin film deposited from the 20 at% solution. According to AFM studies, Zr doping decreased the root mean square roughness of TiO2 film from 5.9 to 1.1 nm. An XRD study of samples with the highest Zr amount showed the ZrTiO4 phase started forming after annealing at 800 °C. The optical band gap for TiO2 decreased from 3.3 eV to 3.0 eV after annealing at 800 °C but for the TiO2:Zr(20) film it remained at 3.4 eV. The dielectric constant increased by more than four times with Zr-doping and this was associated with the change in the bond formations caused by substitution of Ti by Zr in the lattice.

Thermochromic VO2 Films Deposited by RF Magnetron Sputtering Using V2O3 or V2O5 Targets

NASA Astrophysics Data System (ADS)

Shigesato, Yuzo; Enomoto, Mikiko; Odaka, Hidehumi

2000-10-01

Thermochromic monoclinic-tetragonal VO2 films were successfully deposited on glass substrates with high reproducibility by rf magnetron sputtering using V2O3 or V2O5 targets. In the case of reactive sputtering using a V-metal target, the VO2 films could be obtained only under the very narrow deposition conditions of the “transition region” where the deposition rate decreases drastically with increasing oxygen gas flow rate. In the case of a V2O3 target, polycrystalline VO2 films with a thickness of 400 to 500 nm were obtained by the introduction of oxygen gas [O2/(Ar+O2)=1--1.5%], whereas hydrogen gas [H2/(Ar+H2)=2.5--10%] was introduced in the case of a V2O5 target. Furthermore, the VO2 films were successfully grown heteroepitaxially on a single-crystal sapphire [α-Al2O3(001)] substrate, where the epitaxial relationship was confirmed to be VO2(010)[100]\\parallelAl2O3(001)[100], [010], [\\bar{1}\\bar{1}0] by an X-ray diffraction pole figure measurement. The resistivity ratio between semiconductor and metal phases for the heteroepitaxial VO2 films was much larger than the ratio of the polycrystalline films on glass substrates under the same deposition conditions.

Structure and enhanced thermochromic performance of low-temperature fabricated VO 2/V 2O 3 thin film

DOE PAGES

Sun, Guangyao; Cao, Xun; Gao, Xiang; ...

2016-10-06

For VO 2-based smart window manufacture, it is a long-standing demand for high-quality thin films deposited at low temperature. In this paper, the thermochromic films of VO 2 were deposited by a magnetron sputtering method at a fairly low temperature of 250 °C without subsequent annealing by embedding a V 2O 3 interlayer. V 2O 3 acts as a seed layer to lower the depositing temperature and buffer layer to epitaxial grow VO 2 film. The VO 2/V 2O 3 films display high solar modulating ability and narrow hysteresis loop. Finally, our data can serve as a promising point formore » industrial production with high degree of crystallinity at a low temperature.« less

Electrochemical and Spectroscopic Analysis of Mg2+ Intercalation into Thin Film Electrodes of Layered Oxides: V2O5 and MoO3

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gershinsky, G; Yoo, HD; Gofer, Y

Electrochemical, surface, and structural studies related to rechargeable Mg batteries were carried out with monolithic thin-film cathodes comprising layered V2O5 and MoO3. The reversible intercalation reactions of these electrodes with Mg ion in nonaqueous Mg salt solutions were explored using a variety of analytical tools. These included slow-scan rate cyclic voltammetry (SSCV), chrono-potentiometry (galvanostatic cycling), Raman and photoelectron spectroscopies, high-resolution microscopy, and XRD. The V2O5 electrodes exhibited reversible Mg-ion intercalation at capacities around 150-180 mAh g(-1) with 100% efficiency. A capacity of 220 mAh g(-1) at >95% efficiency was obtained with MoO3 electrodes. By applying the electrochemical driving force sufficientlymore » slowly it was possible to measure the electrodes at equilibrium conditions and verify by spectroscopy, microscopy, and diffractometry that these electrodes undergo fully reversible structural changes upon Mg-ion insertion/deinsertion cycling.« less

Nanoscale contact resistance of V2O5 xerogel films developed by nanostructured powder

NASA Astrophysics Data System (ADS)

Bera, Biswajit; Sekhar Das, Pradip; Bhattacharya, Manjima; Ghosh, Swapankumar; Mukhopadhyay, Anoop Kumar; Dey, Arjun

2016-03-01

Here we report the synthesis of V2O5 nanostructures by a fast, simple, cost-effective, low-temperature chemical process; followed by the deposition of V2O5 xerogel thin films on a glass substrate by a sol-gel route. Phase analysis, phase transition, microstructural and electronic characterization studies are carried out by x-ray diffraction, texture coefficient analysis, field emission scanning electron microscopy, transmission electron microscopy (TEM), related selected area electron diffraction pattern (SAED) analysis, Fourier transform infrared spectroscopy, thermogravimetry and differential thermal analysis, differential scanning calorimetry, and x-ray photoelectron spectroscopy techniques. Confirmatory TEM and SAED data analysis prove further that in this polycrystalline powder there is a unique localized existence of purely single crystalline V2O5 powder with a preferred orientation in the (0 1 0) direction. The most interesting result obtained in the present work is that the xerogel thin films exhibit an inherent capability to enhance the intrinsic resistance against contact induced deformations as more external load is applied during the nanoindentation experiments. In addition, both the nanohardness and Young’s modulus of the films are found to be insensitive to load variations (e.g. 1 to 7 mN). These results are explained in terms of microstructural parameters, e.g. porosity and structural configuration.

Cr:SnO2 thin films-synthesis and characterization

NASA Astrophysics Data System (ADS)

Varghese, Anitta Rose; B. Bhadrapriya, C.; Amarendra, G.; Hussain, Shamima

2018-04-01

Thin films of pure and Chromium doped SnO2 were synthesized using sol-gel method by spin coating technique. XRD studies confirmed the formation of tetragonal structure for SnO2 thin films. Variations in peak width and position were identified with doping. The optical band gap of the undoped films was found to be 3.8eV and varied with doping. Raman spectrum gave signature peaks of Sn-O and Cr-O bonds for undoped and doped films. The uniformity of the samples and formation of aggregates were observed from FESEM analysis.

The effect of TiO2 thin film thickness on self-cleaning glass properties

NASA Astrophysics Data System (ADS)

Mufti, Nandang; Laila, Ifa K. R.; Hartatiek; Fuad, Abdulloh

2017-05-01

TiO2 is one of semiconductor materials which are widely used as photocatalyst in the form of a thin film. The TiO2 thin film is prepared by using the spin coating sol-gel method. The researcher prepared TiO2 thin film with 3 coating variations and X-Ray Diffraction characterization, UV-Vis Spectrophotometer, Electron Microscopy Scanning, and examined its hydrophilic and anti-fogging properties. The result of X-Ray Diffraction showed that the phase formed is the anatase on 101crystal field. The Electron Microscopy Scanning images showed that TiO2 thin films had a homogeneous surface with the particle sizes as big as 235 nm, 179 nm, and 137 nm. The thickness of each thin film was 2.06μm, 3.33μm, and 5.20μm. The characterization of UV-Vis Spectrophotometer showed that the greatest absorption to the wavelength of visible light was in the thin film’s thickness of 3 coatings with the band-gap determined by using 3.30 eV, 3.33 eV, and 3.33 eV Plot Tuoc. These results indicated that the rate of absorption would be increased by increasing the thickness of film. The increasing thickness of the thin film makes the film hydrophilic able to be used as an anti-fogging substance.

Influences of the residual argon gas and thermal annealing on Ta2O5 and SiO2 thin film filters

NASA Astrophysics Data System (ADS)

Liu, Wen-Jen; Chen, Chih-Min; Lai, Yin-Chieh

2005-04-01

Ion beam assisted deposition (IBAD) technique had widely used for improving stacking density and atomic mobility of thin films in many applications, especially adopted in optical film industries. Tantalum pentaoxide (Ta2O5) and silicon oxides (SiO2) optical thin films were deposited on the quartz glass substrate by using argon ion beam assisted deposition, and the influences of the residual argon gas and thermal annealing processes on the optical property, stress, compositional and microstructure evolution of the thin films were investigated in this study. Ta2O5 thin films were analyzed by XPS indicated that the ratio value of oxygen to tantalum was insufficient, at the same time, the residual argon gas in the thin films might result in film and device instabilities. Adopting oxygen-thermal annealing treatment at the temperature of 425°C, the thin films not only decreased the residual argon gas and the surface roughness, but also provided the sufficient stoichiometric ratio. Simultaneously, microstructure examination indicated few nano-crystallized structures and voids existed in Ta2O5 thin films, and possessed reasonable refractive index and lower extinction coefficient. By the way, we also suggested the IBAD system using the film compositional gas ion beam to replace the argon ion beam for assisting deposited optical films. The designed (HL)6H6LH(LH)6 multi-layers indicated higher insertion loss than the designed (HL)68H(LH)6 multi-layers. Therefore, using the high refractive index as spacer material represented lower insertion loss.

Ferroelectricity and antiferroelectricity of doped thin HfO2-based films.

PubMed

Park, Min Hyuk; Lee, Young Hwan; Kim, Han Joon; Kim, Yu Jin; Moon, Taehwan; Kim, Keum Do; Müller, Johannes; Kersch, Alfred; Schroeder, Uwe; Mikolajick, Thomas; Hwang, Cheol Seong

2015-03-18

The recent progress in ferroelectricity and antiferroelectricity in HfO2-based thin films is reported. Most ferroelectric thin film research focuses on perovskite structure materials, such as Pb(Zr,Ti)O3, BaTiO3, and SrBi2Ta2O9, which are considered to be feasible candidate materials for non-volatile semiconductor memory devices. However, these conventional ferroelectrics suffer from various problems including poor Si-compatibility, environmental issues related to Pb, large physical thickness, low resistance to hydrogen, and small bandgap. In 2011, ferroelectricity in Si-doped HfO2 thin films was first reported. Various dopants, such as Si, Zr, Al, Y, Gd, Sr, and La can induce ferro-electricity or antiferroelectricity in thin HfO2 films. They have large remanent polarization of up to 45 μC cm(-2), and their coercive field (≈1-2 MV cm(-1)) is larger than conventional ferroelectric films by approximately one order of magnitude. Furthermore, they can be extremely thin (<10 nm) and have a large bandgap (>5 eV). These differences are believed to overcome the barriers of conventional ferroelectrics in memory applications, including ferroelectric field-effect-transistors and three-dimensional capacitors. Moreover, the coupling of electric and thermal properties of the antiferroelectric thin films is expected to be useful for various applications, including energy harvesting/storage, solid-state-cooling, and infrared sensors. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Zirconium doped TiO{sub 2} thin films: A promising dielectric layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Arvind; Mondal, Sandip, E-mail: sandipmondal@physics.iisc.ernet.in; Rao, K. S. R. Koteswara

2016-05-06

In the present work, we have fabricated the zirconium doped TiO{sub 2} thin (ZTO) films from a facile spin – coating method. The addition of Zirconium in TiO{sub 2} offers conduction band offset to Si and consequently decreased the leakage current density by approximately two orders as compared to pure TiO{sub 2} thin (TO) films. The ZTO thin film shows a high dielectric constant 27 with a very low leakage current density ∼10{sup −8} A/cm{sup 2}. The oxide capacitate, flat band voltage and change in flat band voltage are 172 pF, -1.19 V and 54 mV. The AFM analysis confirmed the compactmore » and pore free flat surface. The RMS surface roughness is found to be 1.5 Å. The ellipsometry analysis also verified the fact with a high refractive index 2.21.« less

Crystallization, fluoridation and some properties of apatite thin films prepared through rf-sputtering from CaO-P2O5 glasses.

PubMed

Yamashita, K; Matsuda, M; Arashi, T; Umegaki, T

1998-07-01

Using calcium phosphate glass targets with the CaO/P2O5 molar ratios of 1.50-0.50, much lower than the stoichiometric value of 3.3 for hydroxyapatite, thin films of stoichiometric hydroxy-, nonstoichiometric oxyhydroxy- and Ca-deficient oxyhydroxy-apatites were prepared on alumina ceramic substrates by rf-sputtering followed by post-annealing. Based on the present results, a phase diagram for CaO-P2O5 at low temperatures in the ambience of air was depicted for thin films. The ambient H2O vapor had an influence on the phase diagram: Tricalcium phosphate was changed to apatite in the presence of H2O vapor. Dense fluorohydroxyapatite thin films were prepared by fluoridation of those apatite thin films at a low temperature such as 200 degrees C. In the present report, some functional properties of thin films thus prepared were also shown.

Preparation and Characterization of PbO-SrO-Na2O-Nb2O5-SiO2 Glass Ceramics Thin Film for High-Energy Storage Application

NASA Astrophysics Data System (ADS)

Tan, Feihu; Zhang, Qingmeng; Zhao, Hongbin; Wei, Feng; Du, Jun

2018-03-01

PbO-SrO-Na2O-Nb2O5-SiO2 (PSNNS) glass ceramic thin films were prepared by pulsed laser deposition technology on heavily doped silicon substrates. The influence of annealing temperatures on microstructures, dielectric properties and energy storage performances of the as-prepared films were investigated in detail. X-ray diffraction studies indicate that Pb2Nb2O7 crystallizes at 800°C and disappears at 900°C, while NaNbO3 and PbNb2O6 are formed at the higher temperature of 900°C. The dielectric properties of the glass ceramics thin films have a strong dependence on the phase assemblages that are developed during heat treatment. The maximum dielectric constant value of 171 was obtained for the film annealed at 800°C, owing to the high electric breakdown field strength, The energy storage densities of the PSNNS films annealed at 800°C were as large as 36.9 J/cm3, These results suggest that PSNNS thin films are promising for energy storage applications.

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

PubMed

Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

2018-03-05

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure

NASA Astrophysics Data System (ADS)

Ilahi, B.; Abdel-Rahman, M.; Zaaboub, Z.; Zia, M. F.; Alduraibi, M.; Maaref, H.

2016-09-01

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400∘C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O13 and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

Multivalent Mn-doped TiO2 thin films

NASA Astrophysics Data System (ADS)

Lin, C. Y. W.; Channei, D.; Koshy, P.; Nakaruk, A.; Sorrell, C. C.

2012-07-01

Thin films of TiO2 doped with Mn were deposited on F-doped SnO2-coated glass using spin coating. The concentration of the dopant was in the range 0-7 wt% Mn (metal basis). The films were examined in terms of the structural, chemical, and optical properties. Glancing angle X-ray diffraction data show that the films consisted of the anatase polymorph of TiO2, without any contaminant phases. The X-ray photoelectron spectroscopy data indicate the presence of Mn3+ and Mn4+ in the doped films as well as atomic disorder and associated structural distortion. Ultraviolet-visible spectrophotometry data show that the optical indirect band gap of the films decreased significantly with increasing manganese doping, from 3.32 eV for the undoped composition to 2.90 eV for that doped with 7 wt% Mn.

Impact of mechanical stress on ferroelectricity in (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shiraishi, Takahisa; Institute for Materials Research, Tohoku University, 2-1-1 Katahira, Aoba-ku, Sendai 980-8577; Katayama, Kiliha

2016-06-27

To investigate the impact of mechanical stress on their ferroelectric properties, polycrystalline (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films were deposited on (111)Pt-coated SiO{sub 2}, Si, and CaF{sub 2} substrates with thermal expansion coefficients of 0.47, 4.5, and 22 × 10{sup −6}/ °C, respectively. In-plane X-ray diffraction measurements revealed that the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films deposited on SiO{sub 2} and Si substrates were under in-plane tensile strain and that their volume fraction of monoclinic phase decreased as this strain increased. In contrast, films deposited on CaF{sub 2} substrates were under in-plane compressive strain, and their volume fraction of monoclinic phasemore » was the largest among the three kinds of substrates. The maximum remanent polarization of 9.3 μC/cm{sup 2} was observed for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}, while ferroelectricity was barely observable for Pt/(Hf{sub 0.5}Zr{sub 0.5})O{sub 2}/Pt/TiO{sub 2}/SiO{sub 2}/CaF{sub 2}. This result suggests that the in-plane tensile strain effectively enhanced the ferroelectricity of the (Hf{sub 0.5}Zr{sub 0.5})O{sub 2} thin films.« less

SHI irradiation effect on pure and Mn doped ZnO thin films

NASA Astrophysics Data System (ADS)

Khawal, H. A.; Raskar, N. D.; Dole, B. N.

2017-05-01

Investigated the structural, surface, electrical and modifications induced by Swift Heavy Ions (SHI) irradiation on pure and Mn substituted ZnO thin films were observed. Thin films of Zn1-xMnxO (x = 0.00, 0.04) were synthesized using the dip coating technique. All thin films irradiated by Li3+ swift heavy ions with fluence 5 × 1013 ions/cm2. The XRD peak reveals that all the samples exhibit wurtzite structures. Surface morphology of samples was investigated by SEM, it was observed that pristine samples of ZnO thin film shows spherical shape but for 4 % Mn substituted ZnO thin film with 5 × 1013 ions/cm2 fluence, it reveals that big grain spherical morphology like structure respectively. I-V characteristics were recorded in the voltage range -5 to 5 V. All curves were passed through origin and nearly linear exhibit ohmic in nature for the films.

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors

PubMed Central

2013-01-01

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric. PMID:23294730

Structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics for a-IGZO thin-film transistors.

PubMed

Chen, Fa-Hsyang; Her, Jim-Long; Shao, Yu-Hsuan; Matsuda, Yasuhiro H; Pan, Tung-Ming

2013-01-08

In this letter, we investigated the structural and electrical characteristics of high-κ Er2O3 and Er2TiO5 gate dielectrics on the amorphous indium-gallium-zinc-oxide (a-IGZO) thin-film transistor (TFT) devices. Compared with the Er2O3 dielectric, the a-IGZO TFT device incorporating an Er2TiO5 gate dielectric exhibited a low threshold voltage of 0.39 V, a high field-effect mobility of 8.8 cm2/Vs, a small subthreshold swing of 143 mV/decade, and a high Ion/Ioff current ratio of 4.23 × 107, presumably because of the reduction in the oxygen vacancies and the formation of the smooth surface roughness as a result of the incorporation of Ti into the Er2TiO5 film. Furthermore, the reliability of voltage stress can be improved using an Er2TiO5 gate dielectric.

Effects of the precursor concentration and different annealing ambients on the structural, optical, and electrical properties of nanostructured V2O5 thin films deposited by spray pyrolysis technique

NASA Astrophysics Data System (ADS)

Irani, Rowshanak; Rozati, Seyed Mohammad; Beke, Szabolcs

2018-04-01

V2O5 thin films were deposited with different precursor concentrations of 0.01, 0.05, and 0.1 M on glass substrates by spray pyrolysis technique, then the optimized films were annealed in different ambients (air, oxygen, and vacuum). The results showed that by increasing the concentration, the films grew along the (001) direction with an orthorhombic structure. Field emission scanning electron microscopy showed that nanorods were formed when depositing 0.05 molar of VCl3. We conclude that with the precursor concentration, the surface nanostructure can be well-controlled. Annealing improved the crystallinity under all ambients, but the best crystallinity was achieved in vacuum. It was revealed that the as-deposited films had the highest transmission, whereas the films annealed in air had the lowest. When annealed in air, the optical band gap decreased from 2.45 to 2.32 eV. The sheet resistance, resistivity, mobility, conductivity, and carrier concentration were measured for all the prepared V2O5 films.

Atomic layer deposition of Al2O3 on V2O5 xerogel film for enhanced lithium-ion intercalation stability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Liu, Dawei; Liu, Yanyi; Candelaria, Stephanie L.

V2O5 xerogel films were fabricated by casting V2O5 sols onto fluorine-doped tin oxide glass substrates at room temperature. Five, ten and twenty atomic layers of Al2O3 were grown onto as-fabricated films respectively. The bare film and Al2O3-deposited films all exhibited hydrous V2O5 phase only. Electrochemical impedance spectroscopy study revealed increased surface charge-transfer resistance of V2O5 films as more Al2O3 atomic layers were deposited. Lithium-ion intercalation tests at 600 mAg_1 showed that bare V2O5 xerogel film possessed high initial discharge capacity of 219 mAhg_1 but suffered from severe capacity degradation, i.e., having only 136 mAhg_1 after 50 cycles. After deposition ofmore » ten atomic layers of Al2O3, the initial discharge capacity was 195 mAhg_1 but increased over cycles before stabilizing; after 50 cycles, the discharge capacity was as high as 225 mAhg_1. The noticeably improved cyclic stability of Al2O3-deposited V2O5 xerogel film could be attributed to the improved surface chemistry and enhanced mechanical strength. During repeated lithium-ion intercalation/de-intercalation, atomic layers of Al2O3 which were coated onto V2O5 surface could prevent V2O5 electrode dissolution into electrolyte by reducing direct contact between active electrode and electrolyte while at the same time acting as binder to maintain good mechanical contact between nanoparticles inside the film. VC 2012 American Vacuum Society.« less

Preparation and characterization of nanostructured Pt/TiO2 thin films treated using electron beam.

PubMed

Shin, Joong-Hyeok; Woo, Hee-Gweon; Kim, Bo-Hye; Lee, Byung Cheol; Jun, Jin

2010-05-01

Pt nanoparticle-doped titanium dioxide (Pt/TiO2) thin films were prepared on a silicon wafer substrate by sol-gel spin coating process. The prepared thin films were treated with electron beam (EB at 1.1 MeV, 100, 200, 300 kGy) at air atmosphere. The effect of EB-irradiation on the composition of the treated thin films, optical properties and morphology of thin films were investigated by various analytical techniques such as X-ray photoelectron spectroscopy (XPS), spectroscopic ellipsometry (SE), X-ray diffraction (XRD), field emission-scanning electron microscopy (FE-SEM) and transmission electron microscopy (TEM). The crystal structure of the TiO2 layer was found to be an anatase phase and the size of TiO2 particles was determined to be about 13 nm. Pt nanoparticles with diameter of 5 nm were observed on surface of the films. A new layer (presumed to be Pt-Ti complex and/or PtO2 compound) was created in the Pt/TiO2 thin film treated with EB (300 kGy). The transmittance of thin film decreased with EB treatment whereas the refractive index increased.

Growth of different V2O5 nanostructures as a function of deposition duration

NASA Astrophysics Data System (ADS)

Saini, Sujit K.; Sharma, Rabindar K.; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

2018-05-01

Vanadium pentoxide nanostructured thin films are synthesized using plasma assisted sublimation process (PASP). The effect of deposition duration on the growth of V2O5 nanostructured thin films (NSTs) is studied in present paper. Raman and XRD results depict that all films exhibited only orthorhombic crystalline phase of vanadium oxide (i.e. V2O5). As duration increases the growth of V2O5 nanostructures preferentially aligned along (101) crystallographic plane. Scanning electron micrographs show that different morphologies are obtained with different duration of deposition. For low durations (i.e. 30 and 40 min.) the 1D nanostructures with random alignments are obtained, whereas for prolonged durations of deposition (50 and 60 min) the embedded nanopillers having vertical alignments with uniform distribution on entire substrate are found. The occurrence of remarkable increase in visible radiation from 8% to 13% on increasing duration again implies that the crystallinity and alignments of V2O5 nanostructures is getting improved with duration.

LPCVD homoepitaxy of Si doped β-Ga2O3 thin films on (010) and (001) substrates

NASA Astrophysics Data System (ADS)

Rafique, Subrina; Karim, Md Rezaul; Johnson, Jared M.; Hwang, Jinwoo; Zhao, Hongping

2018-01-01

This paper presents the homoepitaxy of Si-doped β-Ga2O3 thin films on semi-insulating (010) and (001) Ga2O3 substrates via low pressure chemical vapor deposition with a growth rate of ≥1 μm/h. Both high resolution scanning transmission electron microscopy and X-ray diffraction measurements demonstrated high crystalline quality homoepitaxial growth of these thin films. Atomic resolution STEM images of the as-grown β-Ga2O3 thin films on (010) and (001) substrates show high quality material without extended defects or dislocations. The charge carrier transport properties of the as-grown Si-doped β-Ga2O3 thin films were characterized by the temperature dependent Hall measurement using van der Pauw patterns. The room temperature carrier concentrations achieved for the (010) and (001) homoepitaxial thin films were ˜1.2 × 1018 cm-3 and ˜9.5 × 1017 cm-3 with mobilities of ˜72 cm2/V s and ˜42 cm2/V s, respectively.

Fabrication of stable, wide-bandgap thin films of Mg, Zn and O

DOEpatents

Katiyar, Ram S.; Bhattacharya, Pijush; Das, Rasmi R.

2006-07-25

A stable, wide-bandgap (approximately 6 eV) ZnO/MgO multilayer thin film is fabricated using pulsed-laser deposition on c-plane Al₂O₃ substrates. Layers of ZnO alternate with layers of MgO. The thickness of MgO is a constant of approximately 1 nm; the thicknesses of ZnO layers vary from approximately 0.75 to 2.5 nm. Abrupt structural transitions from hexagonal to cubic phase follow a decrease in the thickness of ZnO sublayers within this range. The band gap of the thin films is also influenced by the crystalline structure of multilayer stacks. Thin films with hexagonal and cubic structure have band-gap values of 3.5 and 6 eV, respectively. In the hexagonal phase, Mg content of the films is approximately 40%; in the cubic phase Mg content is approximately 60%. The thin films are stable and their structural and optical properties are unaffected by annealing at 750.degree. C.

Influences of annealing temperature on sprayed CuFeO2 thin films

NASA Astrophysics Data System (ADS)

Abdelwahab, H. M.; Ratep, A.; Abo Elsoud, A. M.; Boshta, M.; Osman, M. B. S.

2018-06-01

Delafossite CuFeO2 thin films were successfully prepared onto quartz substrates using simple spray pyrolysis technique. Post annealing under nitrogen atmosphere for 2 h was necessary to form delafossite CuFeO2 phase. The effect of alteration in annealing temperature (TA) 800, 850 and 900 °C was study on structural, morphology and optical properties. The XRD results for thin film annealed at TA = 850 °C show single phase CuFeO2 with rhombohedral crystal system and R 3 bar m space group with preferred orientation along (0 1 2). The prepared copper iron oxide thin films have an optical transmission ranged ∼40% in the visible region. The optical direct optical band gap of the prepared thin films was ranged ∼2.9 eV.

Electrical and structural characterization of plasma polymerized polyaniline/TiO2 heterostructure diode: a comparative study of single and bilayer TiO2 thin film electrode.

PubMed

Ameen, Sadia; Akhtar, M Shaheer; Kimi, Young Soon; Yang, O-Bong; Shin, Hyung-Shik

2011-04-01

A heterostructure was fabricated using p-type plasma polymerized polyaniline (PANI) and n-type (single and bilayer) titanium dioxide (TiO2) thin film on FTO glass. The deposition of single and bilayer TiO2 thin film on FTO substrate was achieved through doctor blade followed by dip coating technique before subjected to plasma enhanced polymerization. To fabricate p-n heterostructure, a plasma polymerization of aniline was conducted using RF plasma at 13.5 MHz and at the power of 120 W on the single and bilayer TiO2 thin film electrodes. The morphological, optical and the structural characterizations revealed the formation of p-n heterostructures between PANI and TiO2 thin film. The PANI/bilayer TiO2 heterostructure showed the improved current-voltage (I-V) characteristics due to the substantial deposition of PANI molecules into the bilayer TiO2 thin film which provided good conducting pathway and reduced the degree of excitons recombination. The change of linear I-V behavior of PANI/TiO2 heterostructure to non linear behavior with top Pt contact layer confirmed the formation of Schottky contact at the interfaces of Pt layer and PANI/TiO2 thin film layers.

Direct observation of pure pentavalent uranium in U2O5 thin films by high resolution photoemission spectroscopy.

PubMed

Gouder, T; Eloirdi, R; Caciuffo, R

2018-05-29

Thin films of the elusive intermediate uranium oxide U 2 O 5 have been prepared by exposing UO 3 precursor multilayers to atomic hydrogen. Electron photoemission spectra measured about the uranium 4f core-level doublet contain sharp satellites separated by 7.9(1) eV from the 4f main lines, whilst satellites characteristics of the U(IV) and U(VI) oxidation states, expected respectively at 6.9(1) and 9.7(1) eV from the main 4f lines, are absent. This shows that uranium ions in the films are in a pure pentavalent oxidation state, in contrast to previous investigations of binary oxides claiming that U(V) occurs only as a metastable intermediate state coexisting with U(IV) and U(VI) species. The ratio between the 5f valence band and 4f core-level uranium photoemission intensities decreases by about 50% from UO 2 to U 2 O 5 , which is consistent with the 5f  2 (UO 2 ) and 5f  1 (U 2 O 5 ) electronic configurations of the initial state. Our studies conclusively establish the stability of uranium pentoxide.

Plasma Spray Synthesis Of Nanostructured V2O5 Films For Electrical Energy Storage

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nanda, Jagjit

We demonstrate for the first time, the synthesis of nanostructured vanadium pentoxide (V2O5) films and coatings using plasma spray technique. V2O5 has been used in several applications such as catalysts, super-capacitors and also as an electrode material in lithium ion batteries. In the present studies, V2O5 films were synthesized using liquid precursors (vanadium oxychloride and ammonium metavanadate) and powder suspension. In our approach, the precursors were atomized and injected radially into the plasma gun for deposition on the substrates. During the flight towards the substrate, the high temperature of the plasma plume pyrolyzes the precursor particles resulting into the desiredmore » film coatings. These coatings were then characterized using X-ray diffraction (XRD), scanning electron microscopy (SEM), Transmission electron microscopy (TEM) and Differential Scanning Calorimetry (DSC). Among the precursors, vanadium oxychloride gave the best results in terms of nanocrystalline and monophasic films. Spraying of commercial powder suspension yielded multi-phasic mixture in the films. Our approach enables deposition of large area coatings of high quality nanocrystalline films of V2O5 with controllable particle morphology. This has been optimized by means of control over precursor composition and plasma spray conditions. Initial electrochemical studies of V2O5 film electrodes show potential for energy storage studies.« less

Synthesis and characterization of binary ZnO-SnO2 (ZTO) thin films by e-beam evaporation technique

NASA Astrophysics Data System (ADS)

Bibi, Shagufta; Shah, A.; Mahmood, Arshad; Ali, Zahid; Raza, Qaisar; Aziz, Uzma; Haneef; Waheed, Abdul; Shah, Ziaullah

2018-04-01

The binary ZnO-SnO2 (ZTO) thin films with varying SnO2 concentrations (5, 10, 15, and 20 wt%) were grown on glass substrate by e-beam evaporation technique. The prepared ZTO films were annealed at 400 °C in air. These films were then characterized to investigate their structural, optical, and electrical properties as a function of SnO2 concentration. XRD analysis reveals that the crystallinity of the film decreases with the addition of SnO2 and it transforms to an amorphous structure at a composition of 40% SnO2 and 60% ZnO. Morphology of the films was examined by atomic force microscopy which points out that surface roughness of the films decreases with the increasing of SnO2 in the film. Optical properties such as optical transparency, band-gap energy, and optical constants of these films were examined by spectrophotometer and spectroscopic Ellipsometer. It was observed that the average optical transmission of mixed films improves with incorporation of SnO2. In addition, the band-gap energy of the films was determined to be in the range of 3.37-3.7 eV. Furthermore, it was found that the optical constants (n and k) decrease with the addition of SnO2. Similarly, it is observed that the electrical resistivity increases nonlinearly with the increase in SnO2 in ZnO-SnO2 thin films. However, it is noteworthy that the highest figure of merit (FOM) value, i.e., 55.87 × 10-5 Ω-1, is obtained for ZnO-SnO2 (ZTO) thin film with 40 wt% of SnO2 composition. Here, we suggest that ZnO-SnO2 (ZTO) thin film with composition of 60:40 wt% can be used as an efficient TCO film due to the improved transmission, and reduced RMS value and highest FOM value.

Some physical properties of Nb2O5 thin films prepared using nobic acid based colloidal suspension at room temperature

NASA Astrophysics Data System (ADS)

Salim, Evan T.; Admon Saimon, Jehan; Abood, Marwa K.; Fakhri, Makram A.

2017-10-01

This work presents the successful preparation of niobium pentoxide micro structures thin films at room temperature. A chemical colloidal suspension was deposited employing Spin coating method. Nb2O5 thin films were prepared at two different thicknesses before and after ultrasonic vibration processes. Optical, structural, and morphological properties were studied. An enhanced crystalline structure with bigger grain size at both thicknesses was obtained after ultrasonic process; this was ensured by SEM results. The energy gap of the prepared films was estimated and found to be about (2.81, 2.42) eV for (T1  =  325 nm) and (2.59, 2.32) eV at the second thickness (T2  =  425 nm). The I-V characteristic study of prepared heterojunction on silicon substrate show an increase in the rectification ratio after the ultrasonic vibrational process for both thicknesses.

Domain matched epitaxial growth of (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} thin films on (0001) Al{sub 2}O{sub 3} with ZnO buffer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Krishnaprasad, P. S., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Jayaraj, M. K., E-mail: pskrishnaprasu@gmail.com, E-mail: mkj@cusat.ac.in; Antony, Aldrin

2015-03-28

Epitaxial (111) Ba{sub 0.5}Sr{sub 0.5}TiO{sub 3} (BST) thin films have been grown by pulsed laser deposition on (0001) Al{sub 2}O{sub 3} substrate with ZnO as buffer layer. The x-ray ω-2θ, Φ-scan and reciprocal space mapping indicate epitaxial nature of BST thin films. The domain matched epitaxial growth of BST thin films over ZnO buffer layer was confirmed using Fourier filtered high resolution transmission electron microscope images of the film-buffer interface. The incorporation of ZnO buffer layer effectively suppressed the lattice mismatch and promoted domain matched epitaxial growth of BST thin films. Coplanar inter digital capacitors fabricated on epitaxial (111) BSTmore » thin films show significantly improved tunable performance over polycrystalline thin films.« less

Optical enhancement of Au doped ZrO2 thin films by sol-gel dip coating method

NASA Astrophysics Data System (ADS)

John Berlin, I.; Joy, K.

2015-01-01

Homogeneous and transparent Au doped ZrO2 thin films were prepared by sol-gel dip coating method. The films have mixed phase of tetragonal, monoclinic and face centered cubic with crack free surface. Due to the increase in Au doping concentration many-body interaction occurs between free carriers and ionized impurities causing decrease in optical band gap from 5.72 to 5.40 eV. Localized surface plasmon resonance peak of the Au doped films appeared at 610 nm. Conversion of photons to surface plasmons allows the sub-wavelength manipulation of electromagnetic radiation. Hence the prepared Au doped ZrO2 thin films can be applied in nanoscale photonic devices such as lenses, switches, waveguides etc. Moreover the photoluminescence (PL) intensity of Au doped ZrO2 thin films decrease due to decrease in the radiative recombination, life time of the excitons and suppression of grain growth of ZrO2 with increasing Au dopant.

[Modification and luminescence properties of transparent Lu2SiO5 : Ce3+ thin-film phosphors].

PubMed

Fan, Yang-Yang; Liu, Xiao-Lin; Gu, Mu; Ni, Chen; Huang, Shi-Ming; Liu, Bo

2011-02-01

To achieve high-spatial-resolution for X-ray imaging and flat panel display, transparent thin-film phosphors have been attracted much attention in recent years. In comparison with conventional powder phosphors, the transparent thin-film phosphors have some outstanding advantages such as high contrast and resolution, superior thermal conductivity and better adhesion. Cerium-doped lutetium oxyorthosilicate Lu2 SiO5 (LSO) is one promising candidate due to its high density (7.4 g x cm(-3)), high light yield (27 300 photons x MeV(-1)), short decay time (40 ns), and excellent chemical stability. The sol-gel method is one of the most important techniques for deposition of functional thin films, because it possesses a number of advantages over conventional film formation techniques, such as low processing temperature, easy coating of large surfaces, homogenous multicomponent films, and cheap equipments. In X-ray imaging application, the thickness of the thin-film phosphor is the most important factor, which can increase X-ray absorption of the film and then strengthen its luminescence intensity. In the present work, transparent LSO : Ce film was successfully prepared using sol-gel method and spin-coating technique by using inorganic salts as raw materials, 2-methoxyethanol as solvent, and poly (ethylene glycol) (PEG) as modifier without inert atmosphere. The effect of PEG on the luminescence properties of the film was investigated in detail. The results indicated that PEG200 played an important role in the formation of LSO : Ce film, improving its quality and luminescent intensity. The film thickness of 0.9 microm was achieved after 5 times of coating. The luminescence properties of the film were studied. Their performances were good, which implied that the film would have promising applications in high-spatial-resolution X-ray imaging and flat panel display devices.

A very promising piezoelectric property of Ta{sub 2}O{sub 5} thin films. II: Birefringence and piezoelectricity

DOE Office of Scientific and Technical Information (OSTI.GOV)

Audier, M., E-mail: Marc.Audier@grenoble-inp.fr; Chenevier, B.; Roussel, H.

2011-08-15

Birefringent and piezoelectric properties of Ta{sub 2}O{sub 5} ceramic thin films of monoclinic and trigonal structures were analyzed. The birefringence, observed by reflected polarized light microscopy, yields information on thin film microstructures, crystal shapes and sizes and on crystallographic orientations of grains of trigonal structure. Such an information was considered for investigating piezoelectric properties by laser Doppler vibrometry and by piezoresponse force microscopy. The vibration velocity was measured by applying an oscillating electric field between electrodes on both sides of a Ta{sub 2}O{sub 5} film deposited on a Si substrate which was pasted on an isolating mica sheet. In thismore » case, it is shown that the vibration velocity results were not only from a converse piezoelectric effect, proportional to the voltage, but also from the Coulomb force, proportional to the square of the voltage. A huge piezoelectric strain effect, up to 7.6%, is found in the case of Ta{sub 2}O{sub 5} of trigonal structure. From an estimation of the electrical field through the Ta{sub 2}O{sub 5} thin film, this strain likely corresponds to a very high longitudinal coefficient d{sub 33} of several thousand picometers. Results obtained by piezoresponse force microscopy show that trigonal grains exhibit a polarization at zero field, which is probably due to stress caused expansion in the transition monoclinic-trigonal, presented in a previous article (part I). - Graphical abstract: Image of cross-polarized optical microscopy showing grains of trigonal structure embedded in the monoclinic phase (on the left); (a) mounting of the sample for Laser Doppler Vibrometry, sample constituted of several layers and its equivalent electrical circuit; (b) longitudinal displacements due to converse piezoelectric and Coulomb effects and corresponding piezoelectric strain-U{sub app.}. hystereses. Highlights: > A new Ta{sub 2}O{sub 5} trigonal phase is shown to be birefringent

Role of annealing duration on the microstructure and electrochemical performance of β-V2O5 thin films

NASA Astrophysics Data System (ADS)

Jeyalakshmi, K.; Muralidharan, G.

2014-03-01

Vanadium pentoxide thin films have been prepared by sol-gel spin coating method. The eight-layered films coated on fluorine-doped tin oxide substrate and glass substrate were subjected to different durations of annealing under a constant annealing temperature of 300 °C from 30 to 120 min. The X-ray diffraction spectrum reveals crystallinity along (2 0 0) direction. The SEM images of these films show the variation in the surface morphology with increase in annealing duration. The supercapacitor behaviour has been studied using cyclic voltammetry technique and electrochemical impedance spectroscopy. The film annealed for 60 min exhibits a maximum specific capacitance of 346 F/g at a scan rate of 5 mV/s with a charge transfer resistance of 172 Ω.

Simultaneous ultra-long data retention and low power based on Ge10Sb90/SiO2 multilayer thin films

NASA Astrophysics Data System (ADS)

You, Haipeng; Hu, Yifeng; Zhu, Xiaoqin; Zou, Hua; Song, Sannian; Song, Zhitang

2018-02-01

In this article, Ge10Sb90/SiO2 multilayer thin films were prepared to improve thermal stability and data retention for phase change memory. Compared with Ge10Sb90 monolayer thin film, Ge10Sb90 (1 nm)/SiO2 (9 nm) multilayer thin film had higher crystallization temperature and resistance contrast between amorphous and crystalline states. Annealed Ge10Sb90 (1 nm)/SiO2 (9 nm) had uniform grain with the size of 15.71 nm. After annealing, the root-mean-square surface roughness for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film increased slightly from 0.45 to 0.53 nm. The amorphization time for Ge10Sb90 (1 nm)/SiO2 (9 nm) thin film (2.29 ns) is shorter than Ge2Sb2Te5 (3.56 ns). The threshold voltage of a cell based on Ge10Sb90 (1 nm)/SiO2 (9 nm) (3.57 V) was smaller than GST (4.18 V). The results indicated that Ge10Sb90/SiO2 was a promising phase change thin film with high thermal ability and low power consumption for phase change memory application.

Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo 2O 5.5+δ Thin Films

DOE PAGES

Cheng, Sheng; Lu, Jiangbo; Han, Dong; ...

2016-11-23

Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo 2O 5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo 2O 5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo 2O 5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo 2O 6 (δ = 0.5). The discrepancy of energymore » band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Thus, LaBaCo 2O 5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere.« less

Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films.

PubMed

Cheng, Sheng; Lu, Jiangbo; Han, Dong; Liu, Ming; Lu, Xiaoli; Ma, Chunrui; Zhang, Shengbai; Chen, Chonglin

2016-11-23

Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo 2 O 5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo 2 O 5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo 2 O 5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo 2 O 6 (δ = 0.5). The discrepancy of energy band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Hence, LaBaCo 2 O 5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere.

Temperature dependence of gas sensing behaviour of TiO2 doped PANI composite thin films

NASA Astrophysics Data System (ADS)

Srivastava, Subodh; Sharma, S. S.; Sharma, Preetam; Sharma, Vinay; Rajura, Rajveer Singh; Singh, M.; Vijay, Y. K.

2014-04-01

In the present work we have reported the effect of temperature on the gas sensing properties of TiO2 doped PANI composite thin film based chemiresistor type gas sensors for hydrogen gas sensing application. PANI and TiO2 doped PANI composite were synthesized by in situ chemical oxidative polymerization of aniline at low temperature. The electrical properties of these composite thin films were characterized by I-V measurements as function of temperature. The I-V measurement revealed that conductivity of composite thin films increased as the temperature increased. The changes in resistance of the composite thin film sensor were utilized for detection of hydrogen gas. It was observed that at room temperature TiO2 doped PANI composite sensor shows higher response value and showed unstable behavior as the temperature increased. The surface morphology of these composite thin films has also been characterized by scanning electron microscopy (SEM) measurement.

Preparation of p-type GaN-doped SnO2 thin films by e-beam evaporation and their applications in p-n junction

NASA Astrophysics Data System (ADS)

Lv, Shuliang; Zhou, Yawei; Xu, Wenwu; Mao, Wenfeng; Wang, Lingtao; Liu, Yong; He, Chunqing

2018-01-01

Various transparent GaN-doped SnO2 thin films were deposited on glass substrates by e-beam evaporation using GaN:SnO2 targets of different GaN weight ratios. It is interesting to find that carrier polarity of the thin films was converted from n-type to p-type with increasing GaN ratio higher than 15 wt.%. The n-p transition in GaN-doped SnO2 thin films was explained for the formation of GaSn and NO with increasing GaN doping level in the films, which was identified by Hall measurement and XPS analysis. A transparent thin film p-n junction was successfully fabricated by depositing p-type GaN:SnO2 thin film on SnO2 thin film, and a low leakage current (6.2 × 10-5 A at -4 V) and a low turn-on voltage of 1.69 V were obtained for the p-n junction.

Structural, morphological and optical properties of LiCo0.5Ni0.45Ag0.05O2 thin films

NASA Astrophysics Data System (ADS)

Haider, Adawiya J.; AL-Rsool, Rusul Abed; AL-Tabbakh, Ahmed A.; Al-Gebori, Abdul Nasser M.; Mohamed, Aliaa

2018-05-01

Pulsed Laser Deposition (PLD) method has been successfully used for the synthesized of nano-crystalline cathode m aterial LiCo0.5Ni0.45Ag0.05O2 (LCNAO) thin film. LCNAO Ferromagnetic using pulsed Nd-YAG laser with wavelength (λ = 532 nm) and duration (10 ns) and energy fluence (1.4 J/cm2) with different substrate temperature (100, 200, 300) ˚C and O2 pressure at 10 mbar. The structural, morphological and optical properties of the films were determined by X-ray Diffraction (XRD), Scan Electron Microscopy (SEM), Atomic Force microscope (AFM) and UV-VIS spectroscopy respectively. It is observed that partial layer to spinel transformation takes place during post annealing and the average particle size of the LiCo0.5Ni0.45Ag0.05O2 is found to be (1-12) nm from SEM measurement. Finally the optical properties of the thin films have been studied at different Substrate temperature. It found the energy gap decreases from 4.2 to 3.8 eV when the substrate's temperature increasing from 100° C into 300 °C of the LCNAO films. These mean that the optical quality of LCNAO films is improved due to the increase in crystalline size and reduction of defect sites.

Direct observation of the lattice precursor of the metal-to-insulator transition in V2O3 thin films by surface acoustic waves

NASA Astrophysics Data System (ADS)

Kündel, J.; Pontiller, P.; Müller, C.; Obermeier, G.; Liu, Z.; Nateprov, A. A.; Hörner, A.; Wixforth, A.; Horn, S.; Tidecks, R.

2013-03-01

A surface acoustic wave (SAW) delay line is used to study the metal-to-insulator (MI) transition of V2O3 thin films deposited on a piezoelectric LiNbO3 substrate. Effects contributing to the sound velocity shift of the SAW which are caused by elastic properties of the lattice of the V2O3 films when changing the temperature are separated from those originating from the electrical conductivity. For this purpose the electric field accompanying the elastic wave of the SAW has been shielded by growing the V2O3 film on a thin metallic Cr interlayer (coated with Cr2O3), covering the piezoelectric substrate. Thus, the recently discovered lattice precursor of the MI transition can be directly observed in the experiments, and its fine structure can be investigated.

Synthesis of nanodimensional TiO2 thin films.

PubMed

Thakurdesai, Madhavi; Mohanty, T; John, J; Rao, T K Gundu; Raychaudhuri, Pratap; Bhattacharyya, V; Kanjilal, D

2008-08-01

Nanodimensional TiO2 has wide application in the field of photocatalysis, photovoltaic and photochromic devices. In present investigation TiO2 thin films deposited by pulsed laser deposition method are irradiated by 100 MeV Ag ion beam to achieve growth of nanophases. The nanostructure evolution is characterized by atomic force microscopy (AFM). The phases of TiO2 formed after irradiation are identified by glancing angle X-ray diffraction and Raman spectroscopy. The particle radius estimated by AFM varies from 10-13 nm. Anatase phase of TiO2 is formed after irradiation. The blue shift observed in UV-VIS absorption spectra indicates the nanostructure formation. The shape and size of nanoparticles formed due to high electronic excitation depend upon thickness of the film.

Dopant controlled photoinduced hydrophilicity and photocatalytic activity of SnO2 thin films

NASA Astrophysics Data System (ADS)

Talinungsang; Dhar Purkayastha, Debarun; Krishna, M. Ghanashyam

2018-07-01

The influence of Fe and Ni (1 wt.%) doping on the wettability and photocatalytic activity of sol-gel derived SnO2 films is reported. X-ray diffraction studies revealed the presence of tetragonal phase for both pure and doped SnO2 thin films. The crystallite size was of the order of 8 nm indicating the nanocrystalline nature of the films. The pure SnO2 films which were hydrophilic with a contact angle of 11.8° showed increase in contact angle with doping (38.7° for Fe and 48.6° for Ni). This is accompanied by decrease in surface energy and root mean square roughness, with doping of SnO2 film. In order to further increase the water contact angle, the film surfaces were modified using a layer of stearic acid. As a consequence, the water contact angles increased to 108°, 110° and 111° for the pure, Fe and Ni doped SnO2 films respectively, rendering them hydrophobic. Significantly, the unmodified surfaces that did not exhibit any change under UV irradiation showed photoinduced hydrophilicity on modification with stearic acid. There was a red-shift in the optical band gap of SnO2 films from 3.8 to 3.5 eV with doping, indicating the possibility of dopant controlled photocatalytic activity. This was confirmed by observing the photocatalytic degradation of an aqueous solution of methylene blue under UV irradiation. There was, indeed, significant improvement in the photocatalytic efficiency of the metal doped SnO2 thin film in comparison to undoped film. The current work, thus, demonstrates a simple method to chemically engineer the wettability and photocatalytic activity of SnO2 thin film surfaces.

Energy band engineering and controlled p-type conductivity of CuAlO2 thin films by nonisovalent Cu-O alloying

NASA Astrophysics Data System (ADS)

Yao, Z. Q.; He, B.; Zhang, L.; Zhuang, C. Q.; Ng, T. W.; Liu, S. L.; Vogel, M.; Kumar, A.; Zhang, W. J.; Lee, C. S.; Lee, S. T.; Jiang, X.

2012-02-01

The electronic band structure and p-type conductivity of CuAlO2 films were modified via synergistic effects of energy band offset and partial substitution of less-dispersive Cu+ 3d10 with Cu2+ 3d9 orbitals in the valence band maximum by alloying nonisovalent Cu-O with CuAlO2 host. The Cu-O/CuAlO2 alloying films show excellent electronic properties with tunable wide direct bandgaps (˜3.46-3.87 eV); Hall measurements verify the highest hole mobilities (˜11.3-39.5 cm2/Vs) achieved thus far for CuAlO2 thin films and crystals. Top-gate thin film transistors constructed on p-CuAlO2 films were presented, and the devices showed pronounced performance with Ion/Ioff of ˜8.0 × 102 and field effect mobility of 0.97 cm2/Vs.

Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films

NASA Astrophysics Data System (ADS)

Abreu, Elsa; Gilbert Corder, Stephanie N.; Yun, Sun Jin; Wang, Siming; Ramírez, Juan Gabriel; West, Kevin; Zhang, Jingdi; Kittiwatanakul, Salinporn; Schuller, Ivan K.; Lu, Jiwei; Wolf, Stuart A.; Kim, Hyun-Tak; Liu, Mengkun; Averitt, Richard D.

2017-09-01

Ultrafast optical pump-optical probe and optical pump-terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3 ) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the spectral weight oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in both materials. The low-energy Drude response of V2O3 appears more amenable than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the insulator-to-metal phase transition. Our data also confirm observations of strong damping and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3 . More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, paving the way to similar studies in other complex materials.

High efficiency microcolumnar Lu2O3:Eu scintillator thin film for hard X-ray microtomography

NASA Astrophysics Data System (ADS)

Marton, Z.; Bhandari, H. B.; Brecher, C.; Miller, S. R.; Singh, B.; Nagarkar, V. V.

2013-03-01

We have developed microstructured Lu2O3:Eu scintillator films capable of providing spatial resolution on the order of micrometers for hard X-ray imaging. In addition to their extraordinary resolution, Lu2O3:Eu films simultaneously provide high absorption efficiency for 20 to 100 keV X-rays, and bright 610 nm emission, with intensity rivalling that of the brightest known scintillators. At present, high spatial resolution of such a magnitude is achieved using ultra-thin scintillators measuring only about 1 to 5 μm in thickness, which limits absorption efficiency to ~3% for 12 keV X-rays and less than 0.1% for 20 to 100 keV X-rays, resulting in excessive measurement time and exposure to the specimen. Lu2O3:Eu would significantly improve that (99.9% @12 keV and 30% @ 70 keV). Important properties and features of our Lu2O3:Eu scintillator material, fabricated by our electron-beam physical vapour deposition (EB-PVD) process, combines superior density of 9.5 g/cm3, microcolumnar structure emitting 48000 photons/MeV whose wavelength is an ideal match for the underlying CCD detector array. We grew thin films measuring 5-50μm in thickness as well as covering areas up to 5 × 5 cm2 which can be a suitable basis for microtomography, digital radiography as well as CT and hard X-ray Micro-Tomography (XMT).

Low-temperature, solution-processed ZrO2:B thin film: a bifunctional inorganic/organic interfacial glue for flexible thin-film transistors.

PubMed

Park, Jee Ho; Oh, Jin Young; Han, Sun Woong; Lee, Tae Il; Baik, Hong Koo

2015-03-04

A solution-processed boron-doped peroxo-zirconium oxide (ZrO2:B) thin film has been found to have multifunctional characteristics, providing both hydrophobic surface modification and a chemical glue layer. Specifically, a ZrO2:B thin film deposited on a hydrophobic layer becomes superhydrophilic following ultraviolet-ozone (UVO) treatment, whereas the same treatment has no effect on the hydrophobicity of the hydrophobic layer alone. Investigation of the ZrO2:B/hydrophobic interface layer using angle-resolved X-ray photoelectron spectroscopy (AR XPS) confirmed it to be chemically bonded like glue. Using the multifunctional nature of the ZrO2:B thin film, flexible amorphous indium oxide (In2O3) thin-film transistors (TFTs) were subsequently fabricated on a polyimide substrate along with a ZrO2:B/poly-4-vinylphenol (PVP) dielectric. An aqueous In2O3 solution was successfully coated onto the ZrO2:B/PVP dielectric, and the surface and chemical properties of the PVP and ZrO2:B thin films were analyzed by contact angle measurement, atomic force microscopy (AFM), Fourier transform infrared (FT-IR) spectroscopy, and X-ray photoelectron spectroscopy (XPS). The surface-engineered PVP dielectric was found to have a lower leakage current density (Jleak) of 4.38 × 10(-8) A/cm(2) at 1 MV/cm, with no breakdown behavior observed up to a bending radius of 5 mm. In contrast, the electrical characteristics of the flexible amorphous In2O3 TFT such as on/off current ratio (Ion/off) and electron mobility remained similar up to 10 mm of bending without degradation, with the device being nonactivated at a bending radius of 5 mm. These results suggest that ZrO2:B thin films could be used for low-temperature, solution-processed surface-modified flexible devices.

Manipulation of Optical Transmittance by Ordered-Oxygen-Vacancy in Epitaxial LaBaCo2O5.5+δ Thin Films

PubMed Central

Cheng, Sheng; Lu, Jiangbo; Han, Dong; Liu, Ming; Lu, Xiaoli; Ma, Chunrui; Zhang, Shengbai; Chen, Chonglin

2016-01-01

Giant optical transmittance changes of over 300% in wide wavelength range from 500 nm to 2500 nm were observed in LaBaCo2O5.5+δ thin films annealed in air and ethanol ambient, respectively. The reduction process induces high density of ordered oxygen vacancies and the formation of LaBaCo2O5.5 (δ = 0) structure evidenced by aberration-corrected transmission electron microscopy. Moreover, the first-principles calculations reveal the origin and mechanism of optical transmittance enhancement in LaBaCo2O5.5 (δ = 0), which exhibits quite different energy band structure compared to that of LaBaCo2O6 (δ = 0.5). The discrepancy of energy band structure was thought to be the direct reason for the enhancement of optical transmission in reducing ambient. Hence, LaBaCo2O5.5+δ thin films show great prospect for applications on optical gas sensors in reducing/oxidizing atmosphere. PMID:27876830

Influence of thermal treatment temperature on high-performance varistors prepared by hot-dipping tin oxide thin films in Nb2O5 powder

NASA Astrophysics Data System (ADS)

Wang, Qi; Peng, Zhijian; Wang, Yang; Fu, Xiuli

2018-06-01

SnOx-Nb2O5 thin film varistors were prepared by hot-dipping oxygen-deficient tin oxide films in Nb2O5 powder in air, and the influence of hot-dipping temperature (HDT) on the varistor performance of the samples was systematically explored. When the HDT increased from 300 to 700 °C, the nonlinear coefficient of the samples raised first and then dropped down, reaching the maximum of 14.73 at 500 °C, and the breakdown electric field exhibited a similar variation trend, gaining the peak value of 0.0201 V/nm at this temperature. Correspondingly, the leakage current decreased first and then increased with increasing HDT, reaching the minimum of 17.1 mA/cm2 at 500 °C. Besides, it was proposed that a grain-boundary defect barrier model was responsible for the nonlinear behavior of the obtained SnOx-Nb2O5 film varistors. This high-performance thin film varistor with nanoscaled thickness might be much promising in nano-devices or devices working in low voltage.

Synthesis and characterization of ZnO:TiO2 nano composites thin films deposited on glass substrate by sol-gel spray coating technique

NASA Astrophysics Data System (ADS)

Sutanto, Heri; Nurhasanah, Iis; Hidayanto, Eko; Wibowo, Singgih; Hadiyanto

2015-12-01

In this work, (ZnO)x:(TiO2)1-x nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol-gel spray coating technique onto glass substrate. Pure TiO2 and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO2 and ZnO:TiO2 thin films at different composition have been investigated. Ultraviolet - Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employed in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO2 on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.

Oxygen vacancy induced room temperature ferromagnetism in (In1-xNix)2O3 thin films

NASA Astrophysics Data System (ADS)

Chakraborty, Deepannita; Kaleemulla, S.; Kuppan, M.; Rao, N. Madhusudhana; Krishnamoorthi, C.; Omkaram, I.; Reddy, D. Sreekantha; Rao, G. Venugopal

2018-05-01

Nickel doped indium oxide thin films (In1-xNix)2O3 at x = 0.00, 0.03, 0.05 and 0.07 were deposited onto glass substrates by electron beam evaporation technique. The deposited thin films were subjected to annealing in air at 250 °C, 350 °C and 450 °C for 2 h using high temperature furnace. A set of films were vacuum annealed at 450 °C to study the role of oxygen on magnetic properties of the (In1-xNix)2O3 thin films. The thin films were subjected to different characterization techniques to study their structural, chemical, surface, optical and magnetic properties. All the synthesized air annealed and vacuum annealed films exhibit body centered cubic structure without any secondary phases. No significant change in the diffraction peak position, either to lower or higher diffraction angles has been observed. The band gap of the films decreased from 3.73 eV to 3.63 eV with increase of annealing temperature from 250 °C to 450 °C, in the presence of air. From a slight decrease in strength of magnetization to a complete disappearance of hysteresis loop has been observed in pure In2O3 thin films with increasing the annealing temperature from 250 °C to 450 °C, in the presence of air. The (In1-xNix)2O3 thin films annealed under vacuum follow a trend of enhancement in the strength of magnetization to increase in temperature from 250 °C to 450 °C. The hysteresis loop does not disappear at 450 °C in (In1-xNix)2O3 thin films, as observed in the case of pure In2O3 thin films.

Electrical properties of HfO2 high- k thin-film MOS capacitors for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Khairnar, A. G.; Patil, L. S.; Salunke, R. S.; Mahajan, A. M.

2015-11-01

We deposited the hafnium dioxide (HfO2) thin films on p-Si (100) substrates. The thin films were deposited with deposition time variations, viz 2, 4, 7 and 20 min using RF-sputtering technique. The thickness and refractive index of the films were measured using spectroscopic ellipsometer. The thicknesses of the films were measured to be 13.7, 21.9, 35.38 and 92.2 nm and refractive indices of 1.90, 1.93, 1.99 and 1.99, respectively, of the films deposited for 2, 4, 7 and 20 min deposition time. The crystal structures of the deposited HfO2 thin films were determined using XRD spectra and showed the monoclinic structure, confirmed with the ICDD card no 34-0104. Aluminum metallization was carried to form the Al/HfO2/ p-Si MOS structures by using thermal evaporation system with electrode area of 12.56 × 10-4 cm2. Capacitance voltage and current voltage measurements were taken to know electrical behavior of these fabricated MOS structures. The electrical parameters such as dielectric constant, flat-band shift and interface trap density determined through CV measurement were 7.99, 0.11 V and 6.94 × 1011 eV-1 cm-2, respectively. The low leakage current density was obtained from IV measurement of fabricated MOS structure at 1.5 V is 4.85 × 10-10 Acm-2. Aforesaid properties explored the suitability of the fabricated HfO2 high- k-based MOS capacitors for advanced CMOS technology.

Thickness-dependence of optical constants for Ta2O5 ultrathin films

NASA Astrophysics Data System (ADS)

Zhang, Dong-Xu; Zheng, Yu-Xiang; Cai, Qing-Yuan; Lin, Wei; Wu, Kang-Ning; Mao, Peng-Hui; Zhang, Rong-Jun; Zhao, Hai-bin; Chen, Liang-Yao

2012-09-01

An effective method for determining the optical constants of Ta2O5 thin films deposited on crystal silicon (c-Si) using spectroscopic ellipsometry (SE) measurement with a two-film model (ambient-oxide-interlayer-substrate) was presented. Ta2O5 thin films with thickness range of 1-400 nm have been prepared by the electron beam evaporation (EBE) method. We find that the refractive indices of Ta2O5 ultrathin films less than 40 nm drop with the decreasing thickness, while the other ones are close to those of bulk Ta2O5. This phenomenon was due to the existence of an interfacial oxide region and the surface roughness of the film, which was confirmed by the measurement of atomic force microscopy (AFM). Optical properties of ultrathin film varying with the thickness are useful for the design and manufacture of nano-scaled thin-film devices.

Nanocrystalline SnO2 formation by oxygen ion implantation in tin thin films

NASA Astrophysics Data System (ADS)

Kondkar, Vidya; Rukade, Deepti; Kanjilal, Dinakar; Bhattacharyya, Varsha

2018-03-01

Metallic tin thin films of thickness 100 nm are deposited on fused silica substrates by thermal evaporation technique. These films are implanted with 45 keV oxygen ions at fluences ranging from 5 × 1015 to 5 × 1016 ions cm-2. The energy of the oxygen ions is calculated using SRIM in order to form embedded phases at the film-substrate interface. Post-implantation, films are annealed using a tube furnace for nanocrystalline tin oxide formation. These films are characterized using x-ray diffraction, Raman spectroscopy, UV-vis spectroscopy and photoluminescence spectroscopy. XRD and Raman spectroscopy studies reveal the formation of single rutile phase of SnO2. The size of the nanocrystallites formed decreases with an increase in the ion fluence. The nanocrystalline SnO2 formation is also confirmed by UV-vis and photoluminescence spectroscopy.

Oxygen vacancies controlled multiple magnetic phases in epitaxial single crystal Co0.5(Mg0.55Zn0.45)0.5O1-v thin films

PubMed Central

Zhu, Dapeng; Cao, Qiang; Qiao, Ruimin; Zhu, Shimeng; Yang, Wanli; Xia, Weixing; Tian, Yufeng; Liu, Guolei; Yan, Shishen

2016-01-01

High quality single-crystal fcc-Cox(MgyZn1-y)1-xO1-v epitaxial thin films with high Co concentration up to x = 0.5 have been fabricated by molecular beam epitaxy. Systematic magnetic property characterization and soft X-ray absorption spectroscopy analysis indicate that the coexistence of ferromagnetic regions, superparamagnetic clusters, and non-magnetic boundaries in the as-prepared Cox(MgyZn1-y)1-xO1-v films is a consequence of the intrinsic inhomogeneous distribution of oxygen vacancies. Furthermore, the relative strength of multiple phases could be modulated by controlling the oxygen partial pressure during sample preparation. Armed with both controllable magnetic properties and tunable band-gap, Cox(MgyZn1-y)1-xO1-v films may have promising applications in future spintronics. PMID:27062992

Observation of shift in band gap with annealing in hydrothermally synthesized TiO2-thin films

NASA Astrophysics Data System (ADS)

Pawar, Vani; Jha, Pardeep K.; Singh, Prabhakar

2018-05-01

Anatase TiO2 thin films were synthesized by hydrothermal method. The films were fabricated on a glass substrate by spin coating unit and annealed at 500 °C for 2 hours in ambient atmosphere. The effect of annealing on microstructure and optical properties of TiO2 thin films namely, just deposited and annealed thin film were investigated. The XRD data confirms the tetragonal crystalline structure of the films with space group I41/amd. The surface morphology suggests that TiO2 particles are almost homogeneous in size and annealing of the film affect the grain growth of the particles. The band gap energy increases from 2.81 to 3.34 eV. On the basis of our observation, it can be concluded that the annealing of TiO2 thin films enhances the absorption range and it may find potential application in the field of solar cells.

Resonant photoemission spectroscopic studies of SnO2 thin films

NASA Astrophysics Data System (ADS)

Kumar, Sunil; Chauhan, R. S.; Panchal, Gyanendra; Singh, C. P.; Dar, Tanveer A.; Phase, D. M.; Choudhary, R. J.

2017-09-01

We report the structural and electronic properties of single phase, polycrystalline rutile tetragonal SnO2 thin film grown on Si (100) substrate by pulsed laser deposition technique. X-ray photoelectron and resonant photoemission spectroscopic (RPES) studies divulge that Sn is present in 4+ (˜91%) valence state with a very small involvement of 2+ (˜9%) valence state at the surface. Valence band spectrum of the film shows prominent contribution due to the Sn4+ valence state. RPES measurements were performed in the Sn 4d→5p photo absorption region. This study shows that O-2p, Sn-5s, and Sn-5p partial density of states are the main contributions to the valence band of this material. The resonance behavior of these three contributions has been analyzed. Constant initial state versus photon energy plots suggest that the low binding energy feature at ˜2.8 eV results from the hybridization of the O-2p and mixed valence states of Sn, while remaining features at higher binding energies are due to the hybridization between O-2p (bonding) orbitals and Sn4+ valence state.

Structural, electrical and optical properties of nanostructured ZrO2 thin film deposited by SILAR method

NASA Astrophysics Data System (ADS)

Salodkar, R. V.; Belkhedkar, M. R.; Nemade, S. D.

2018-05-01

Successive Ionic Layer Adsorption and Reaction (SILAR) method has been employed to deposit nanocrystalline ZrO2 thin film of thickness 91 nm onto glass substrates using ZrOCl2.8H2O and NaOH as cationic and anionic precursors respectively. The structural and surface morphological characterizations have been carried out by means of X-ray diffraction and field emission scanning electron microscopy confirms the nanocrystalline nature of ZrO2 thin film. The direct optical band gap and activation energy of the ZrO2 thin film are found to be 4.74 and 0.80eV respectively.

Ultraviolet emission enhancement in ZnO thin films modified by nanocrystalline TiO2

NASA Astrophysics Data System (ADS)

Zheng, Gaige; Lu, Xi; Qian, Liming; Xian, Fenglin

2017-05-01

In this study, nanocrystalline TiO2 modified ZnO thin films were prepared by electron beam evaporation. The structural, morphological and optical properties of the samples were analyzed by X-ray diffraction (XRD), scanning electron microscopy (SEM), high-resolution transmission electron microscopy (HRTEM), UV-visible spectroscopy, fluorescence spectroscopy, respectively. The composition of the films was examined by energy dispersive X-ray spectroscopy (EDX). The photoluminescent spectrum shows that the pure ZnO thin film exhibits an ultraviolet (UV) emission peak and a strong green emission band. Surface analysis indicates that the ZnO thin film contains many oxygen vacancy defects on the surface. After the ZnO thin film is modified by the nanocrystalline TiO2 layer, the UV emission of ZnO is largely enhanced and the green emission is greatly suppressed, which suggests that the surface defects such as oxygen vacancies are passivated by the TiO2 capping layer. As for the UV emission enhancement of the ZnO thin film, the optimized thickness of the TiO2 capping layer is ∼16 nm. When the thickness is larger than 16 nm, the UV emission of the ZnO thin film will decrease because the TiO2 capping layer absorbs most of the excitation energy. The UV emission enhancement in the nanocrystalline TiO2 modified ZnO thin film can be attributed to surface passivation and flat band effect.

Crystallization of Sr0.5Ba0.5Nb2O6 Thin Films on LaNiO3 Electrodes by RF Magnetron Reactive Sputtering

NASA Astrophysics Data System (ADS)

Jong, Chao-An; Gan, Jon-Yiew

2000-02-01

Strontium barium niobium (Sr0.5Ba0.5Nb2O6) (SBN) thin films are prepared on conductive-oxide LNO (LaNiO3) electrodes by the rf magnetron sputtering system. Instead of conventional furnace annealing, SBN thin films are crystallized by rapid thermal annealing (RTA) above 700°C for 5 min. The textured SBN films are crystallized with two orientations: one is the (001) or (310) direction, and the other is the (002) or (620) direction. Films compositions measured by the electron spectroscopy of chemical analysis (ESCA) quantitative analysis method show nearly the same stoichiometric ratio as the target. The depth profiles of SBN films and the target are examined by secondary ion mass spectrometer (SIMS). The concentrations of the films are quite uniform. After being heat treated at 800°C for 5 min by RTA, La and Ni diffuse into the SBN film. The diffusion coefficient of La in SBN films is also calculated.

Effect of molarity on sol-gel routed nano TiO2 thin films

NASA Astrophysics Data System (ADS)

Lourduraj, Stephen; Williams, Rayar Victor

The nanostructured titanium dioxide (TiO2) thin films have been prepared for the molar concentrations of titanium tetra isopropoxide (TTIP) 0.05M, 0.1M, 0.15M and 0.2M by sol-gel routed spin coating technique with calcination at 450∘C. The processing parameters such as, pH value (8), catalyst HCl (0.1ml), spin speed (3000rpm) and calcination temperature (450∘C) are optimized. The crystalline nature and surface morphology were analyzed by XRD, SEM and AFM analysis. The XRD results confirm that the films are crystalline with anatase phase, and are nanostructured. The SEM micrographs of the TiO2 film reveal the spherical nature of the particle. AFM analysis establishes that the uniformity of the TiO2 thin film was optimized at 0.2M. The optical measurements show that the transmittance depends on the molarity, and the optical band gap energy of TiO2 films is found to be inversely proportional to molarity. The I-V characteristics exhibit that the molarity strongly influences the electrical conductivity of the film. The results indicate that the significant effect of molarity on structural, optical and electrical properties of the nanostructured TiO2 thin films will be useful to photovoltaic application.

The low temperature oxidation of lithium thin films on HOPG by O 2 and H 2O

DOE PAGES

Wulfsberg, Steven M.; Koel, Bruce E.; Bernasek, Steven L.

2016-04-16

Lithiated graphite and lithium thin films have been used in fusion devices. In this environment, lithiated graphite will undergo oxidation by background gases. In order to gain insight into this oxidation process, thin (< 15 monolayer (ML)) lithium films on highly ordered pyrolytic graphite (HOPG) were exposed in this paper to O 2(g) and H 2O (g) in an ultra-high vacuum chamber. High resolution electron energy loss spectroscopy (HREELS) was used to identify the surface species formed during O 2(g) and H 2O (g) exposure. Auger electron spectroscopy (AES) was used to obtain the relative oxidation rates during O 2(g)more » and H 2O (g) exposure. AES showed that as the lithium film thickness decreased from 15 to 5 to 1 ML, the oxidation rate decreased for both O 2(g) and H 2O (g). HREELS showed that a 15 ML lithium film was fully oxidized after 9.7 L (L) of O 2(g) exposure and Li 2O was formed. HREELS also showed that during initial exposure (< 0.5 L) H 2O (g), lithium hydride and lithium hydroxide were formed on the surface of a 15 ML lithium film. Finally, after 0.5 L of H 2O (g) exposure, the H 2O (g) began to physisorb, and after 15 L of H 2O (g) exposure, the 15 ML lithium film was not fully oxidized.« less

The low temperature oxidation of lithium thin films on HOPG by O 2 and H 2O

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wulfsberg, Steven M.; Koel, Bruce E.; Bernasek, Steven L.

Lithiated graphite and lithium thin films have been used in fusion devices. In this environment, lithiated graphite will undergo oxidation by background gases. In order to gain insight into this oxidation process, thin (< 15 monolayer (ML)) lithium films on highly ordered pyrolytic graphite (HOPG) were exposed in this paper to O 2(g) and H 2O (g) in an ultra-high vacuum chamber. High resolution electron energy loss spectroscopy (HREELS) was used to identify the surface species formed during O 2(g) and H 2O (g) exposure. Auger electron spectroscopy (AES) was used to obtain the relative oxidation rates during O 2(g)more » and H 2O (g) exposure. AES showed that as the lithium film thickness decreased from 15 to 5 to 1 ML, the oxidation rate decreased for both O 2(g) and H 2O (g). HREELS showed that a 15 ML lithium film was fully oxidized after 9.7 L (L) of O 2(g) exposure and Li 2O was formed. HREELS also showed that during initial exposure (< 0.5 L) H 2O (g), lithium hydride and lithium hydroxide were formed on the surface of a 15 ML lithium film. Finally, after 0.5 L of H 2O (g) exposure, the H 2O (g) began to physisorb, and after 15 L of H 2O (g) exposure, the 15 ML lithium film was not fully oxidized.« less

Zn1-xAlxO:Cu2O transparent metal oxide composite thin films by sol gel method

NASA Astrophysics Data System (ADS)

AlHammad, M. S.

2017-05-01

We have synthesized undoped zinc oxide (ZnO) and Cu2O doped Zn1-XAlXO (AZO; Al/Zn = 1.5 at.%) metal oxide films by sol-gel spin coating method. Atomic force microscopy results indicate that the Zn1-xAlxO:Cu2O is are formed form the fibers. The surface morphology of the films is found to depend on the concentration of Cu2O. The optical constants such as band gap, Urbach energy, refractive index, extinction coefficient and dielectric constants of the films were determined. The transmittance spectra shows that all the films are highly transparent. The study revealed that undoped ZnO film has direct bang gap of 3.29 eV and the optical band gap of films is increased with doping content. The hot probe measurements indicate that Zn1-xAlxO:Cu2O transparent metal oxide composite thin films exhibited p-type electrical conductivity.

Optimization of pulsed laser deposited ZnO thin-film growth parameters for thin-film transistors (TFT) application

NASA Astrophysics Data System (ADS)

Gupta, Manisha; Chowdhury, Fatema Rezwana; Barlage, Douglas; Tsui, Ying Yin

2013-03-01

In this work we present the optimization of zinc oxide (ZnO) film properties for a thin-film transistor (TFT) application. Thin films, 50±10 nm, of ZnO were deposited by Pulsed Laser Deposition (PLD) under a variety of growth conditions. The oxygen pressure, laser fluence, substrate temperature and annealing conditions were varied as a part of this study. Mobility and carrier concentration were the focus of the optimization. While room-temperature ZnO growths followed by air and oxygen annealing showed improvement in the (002) phase formation with a carrier concentration in the order of 1017-1018/cm3 with low mobility in the range of 0.01-0.1 cm2/V s, a Hall mobility of 8 cm2/V s and a carrier concentration of 5×1014/cm3 have been achieved on a relatively low temperature growth (250 °C) of ZnO. The low carrier concentration indicates that the number of defects have been reduced by a magnitude of nearly a 1000 as compared to the room-temperature annealed growths. Also, it was very clearly seen that for the (002) oriented films of ZnO a high mobility film is achieved.

Synthesis and characterization of ZnO:TiO{sub 2} nano composites thin films deposited on glass substrate by sol-gel spray coating technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sutanto, Heri, E-mail: herisutanto@undip.ac.id; Nurhasanah, Iis; Hidayanto, Eko

In this work, (ZnO){sub x}:(TiO{sub 2}){sub 1-x} nano composites thin films, with x = 1, 0.75, 0.5, 0.25, and 0, have been prepared by sol–gel spray coating technique onto glass substrate. Pure TiO{sub 2} and ZnO thin films were synthesized from titanium isopropoxide-based and zinc acetate-based precursor solutions, respectively, whereas the composite films were obtained from the mixture of these solutions at the specific % vol ratios. The properties and performance of nano composite ZnO, TiO{sub 2} and ZnO:TiO{sub 2} thin films at different composition have been investigated. Ultraviolet – Visible (UV-Vis) Spectrophotometer and Scanning Electron Microscopy (SEM) were employedmore » in order to get morphology and transmittance of thin films. Testing the ability of photocatalytic activity of obtained films was conducted on photodegradation of methylene blue (MB) dye and organic pollutants of wastewater under a 30 watt UV light irradiation, then testing BOD, COD and TPC were conducted. Using the Tauc model, the band-gap energy decreased from 3.12 eV to 3.02 eV for the sample with x = 1 and 0, respectively. This decrease occured along with the replacement of percentage of ZnO by TiO{sub 2} on the films. This decrease also reduced the minimum energy that required for electron excitation. Obtained thin films had nanoscale roughness level with range 3.64 to 17.30 nm. The film with x= 0 has the biggest removal percentage on BOD, COD and TPC mesurements with percentage 54.82%, 62.73% and 99.88%, respectively.« less

Sol-gel deposited Cu2O and CuO thin films for photocatalytic water splitting.

PubMed

Lim, Yee-Fun; Chua, Chin Sheng; Lee, Coryl Jing Jun; Chi, Dongzhi

2014-12-21

Cu2O and CuO are attractive photocatalytic materials for water splitting due to their earth abundance and low cost. In this paper, we report the deposition of Cu2O and CuO thin films by a sol-gel spin-coating process. Sol-gel deposition has distinctive advantages such as low-cost solution processing and uniform film formation over large areas with a precise stoichiometry and thickness control. Pure-phase Cu2O and CuO films were obtained by thermal annealing at 500 °C in nitrogen and ambient air, respectively. The films were successfully incorporated as photocathodes in a photoelectrochemical (PEC) cell, achieving photocurrents of -0.28 mA cm(-2) and -0.35 mA cm(-2) (for Cu2O and CuO, respectively) at 0.05 V vs. a reversible hydrogen electrode (RHE). The Cu2O photocurrent was enhanced to -0.47 mA cm(-2) upon incorporation of a thin layer of a NiOx co-catalyst. Preliminary stability studies indicate that CuO may be more stable than Cu2O as a photocathode for PEC water-splitting.

Oxygen vacancies controlled multiple magnetic phases in epitaxial single crystal Co 0.5(Mg 0.55Zn 0.45) 0.5O 1-v thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Dapeng; Cao, Qiang; Qiao, Ruimin

2016-04-11

High quality single-crystal fcc-Co x (Mg y Zn 1-y ) 1-x O 1-v epitaxial thin films with high Co concentration up to x = 0.5 have been fabricated by molecular beam epitaxy. Systematic magnetic property characterization and soft X-ray absorption spectroscopy analysis indicate that the coexistence of ferromagnetic regions, superparamagnetic clusters, and non-magnetic boundaries in the as-prepared Co x (Mg y Zn 1-y ) 1-x O 1-v films is a consequence of the intrinsic inhomogeneous distribution of oxygen vacancies. Furthermore, the relative strength of multiple phases could be modulated by controlling the oxygen partial pressure during sample preparation. Armed withmore » both controllable magnetic properties and tunable band-gap, Co x (Mg y Zn 1-y ) 1-x O 1-v films may have promising applications in future spintronics.« less

SnO2/TiO2 bilayer thin films exhibiting superhydrophilic properties

NASA Astrophysics Data System (ADS)

Talinungsang, Nibedita Paul; Purkayastha, Debarun Dhar

2017-05-01

Nanostructured thin films of TiO2, SnO2, and SnO2/TiO2 have been deposited by sol-gel method. The films are characterized by X-ray diffraction, wettability and optical properties. In the present work, we have achieved a way of converting hydrophilic to super-hydrophilic state by incorporating TiO2 buffer layer in between substrate and SnO2 film, which has its utility in anti-fogging surfaces. The decrease in contact angle of water over SnO2/TiO2 bilayer is attributed to the increase in roughness of the film as well as surface energy of the substrate.

Growth of epitaxial orthorhombic YO{sub 1.5}-substituted HfO{sub 2} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shimizu, Takao; Katayama, Kiliha; Kiguchi, Takanori

YO{sub 1.5}-substituted HfO{sub 2} thin films with various substitution amounts were grown on (100) YSZ substrates by the pulsed laser deposition method directly from the vapor phase. The epitaxial growth of film with different YO{sub 1.5} amounts was confirmed by the X-ray diffraction method. Wide-area reciprocal lattice mapping measurements were performed to clarify the crystal symmetry of films. The formed phases changed from low-symmetry monoclinic baddeleyite to high-symmetry tetragonal/cubic fluorite phases through an orthorhombic phase as the YO{sub 1.5} amount increased from 0 to 0.15. The additional annular bright-field scanning transmission electron microscopy indicates that the orthorhombic phase has polarmore » structure. This means that the direct growth by vapor is of polar orthorhombic HfO{sub 2}-based film. Moreover, high-temperature X-ray diffraction measurements showed that the film with a YO{sub 1.5} amount of 0.07 with orthorhombic structure at room temperature only exhibited a structural phase transition to tetragonal phase above 450 °C. This temperature is much higher than the reported maximum temperature of 200 °C to obtain ferroelectricity as well as the expected temperature for real device application. The growth of epitaxial orthorhombic HfO{sub 2}-based film helps clarify the nature of ferroelectricity in HfO{sub 2}-based films (186 words/200 words)« less

Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

DOE PAGES

Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin; ...

2017-05-01

Pyrochlore-structure oxides, A 2B 2O 7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. In this paper, the mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La 2Zr 2O 7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr + at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopymore » (STEM). At lower doses, the surface of the La 2Zr 2O 7 film amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La 2Zr 2O 7, the bandgap of a thick La 2Zr 2O 7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.« less

The effect of Argon pressure dependent V thin film on the phase transition process of (020) VO2 thin film

NASA Astrophysics Data System (ADS)

Meng, Yifan; Huang, Kang; Tang, Zhou; Xu, Xiaofeng; Tan, Zhiyong; Liu, Qian; Wang, Chunrui; Wu, Binhe; Wang, Chang; Cao, Juncheng

2018-01-01

It has been proved challenging to fabricate the single crystal orientation of VO2 thin film by a simple method. Based on chemical reaction thermodynamic and crystallization analysis theory, combined with our experimental results, we find out that when stoichiometric number of metallic V in the chemical equation is the same, the ratio of metallic V thin film surface average roughness Ra to thin film average particle diameter d decreases with the decreasing sputtering Argon pressure. Meanwhile, the oxidation reaction equilibrium constant K also decreases, which will lead to the increases of oxidation time, thereby the crystal orientation of the VO2 thin film will also become more uniform. By sputtering oxidation coupling method, metallic V thin film is deposited on c-sapphire substrate at 1 × 10-1 Pa, and then oxidized in the air with the maximum oxidation time of 65s, high oriented (020) VO2 thin film has been fabricated successfully, which exhibits ∼4.6 orders sheet resistance change across the metal-insulator transition.

Electrical properties of radio-frequency sputtered HfO2 thin films for advanced CMOS technology

NASA Astrophysics Data System (ADS)

Sarkar, Pranab Kumar; Roy, Asim

2015-08-01

The Hafnium oxide (HfO2) high-k thin films have been deposited by radio frequency (rf) sputtering technique on p-type Si (100) substrate. The thickness, composition and phases of films in relation to annealing temperatures have been investigated by using cross sectional FE-SEM (Field Emission Scanning Electron Microscope) and grazing incidence x-ray diffraction (GI-XRD), respectively. GI-XRD analysis revealed that at annealing temperatures of 350°C, films phases change to crystalline from amorphous. The capacitance-voltage (C-V) and current-voltage (I-V) characteristics of the annealed HfO2 film have been studied employing Al/HfO2/p-Si metal-oxide-semiconductor (MOS) structures. The electrical properties such as dielectric constant, interface trap density and leakage current density have been also extracted from C-V and I-V Measurements. The value of dielectric constant, interface trap density and leakage current density of annealed HfO2 film is obtained as 23,7.57×1011eV-1 cm-2 and 2.7×10-5 Acm-2, respectively. In this work we also reported the influence of post deposition annealing onto the trapping properties of hafnium oxide and optimized conditions under which no charge trapping is observed into the dielectric stack.

Thin-film Rechargeable Lithium Batteries

DOE R&D Accomplishments Database

Dudney, N. J.; Bates, J. B.; Lubben, D.

1995-06-01

Thin film rechargeable lithium batteries using ceramic electrolyte and cathode materials have been fabricated by physical deposition techniques. The lithium phosphorous oxynitride electrolyte has exceptional electrochemical stability and a good lithium conductivity. The lithium insertion reaction of several different intercalation materials, amorphous V{sub 2}O{sub 5}, amorphous LiMn{sub 2}O{sub 4}, and crystalline LiMn{sub 2}O{sub 4} films, have been investigated using the completed cathode/electrolyte/lithium thin film battery.

Thin Films

NASA Astrophysics Data System (ADS)

Khorshidi, Zahra; Bahari, Ali; Gholipur, Reza

2014-11-01

Effect of annealing temperature on the characteristics of sol-gel-driven Ta ax La(1- a) x O y thin film spin-coated on Si substrate as a high- k gate dielectric was studied. Ta ax La(1- a) x O y thin films with different amounts of a were prepared (as-prepared samples). X-ray diffraction measurements of the as-prepared samples indicated that Ta0.3 x La0.7 x Oy film had an amorphous structure. Therefore, Ta0.3 x La0.7 x O y film was chosen to continue the present studies. The morphology of Ta0.3 x La0.7 x O y films was studied using scanning electron microscopy and atomic force microscopy techniques. The obtained results showed that the size of grain boundaries on Ta0.3 x La0.7 x O y film surfaces was increased with increasing annealing temperature. Electrical and optical characterizations of the as-prepared and annealed films were investigated as a function of annealing temperature using capacitance-voltage ( C- V) and current density-voltage ( J- V) measurements and the Tauc method. The obtained results demonstrated that Ta0.3 x La0.7 x O y films had high dielectric constant (≈27), wide band gap (≈4.5 eV), and low leakage current density (≈10-6 A/cm2 at 1 V).

Tuning metal-insulator transitions in epitaxial V2O3 thin films

NASA Astrophysics Data System (ADS)

Thorsteinsson, Einar B.; Shayestehaminzadeh, Seyedmohammad; Arnalds, Unnar B.

2018-04-01

We present a study of the synthesis of epitaxial V2O3 films on c-plane Al2O3 substrates by reactive dc-magnetron sputtering. The results reveal a temperature window, at substantially lower values than previously reported, wherein epitaxial films can be obtained when deposited on [0001] oriented surfaces. The films display a metal-insulator transition with a change in the resistance of up to four orders of magnitude, strongly dependent on the O2 partial pressure during deposition. While the electronic properties of the films show sensitivity to the amount of O2 present during deposition of the films, their crystallographic structure and surface morphology of atomically flat terraced structures with up to micrometer dimensions are maintained. The transition temperature, as well as the scale of the metal-insulator transition, is correlated with the stoichiometry and local strain in the films controllable by the deposition parameters.

Effect of annealing temperature on optical and electrical properties of ZrO2-SnO2 based nanocomposite thin films

NASA Astrophysics Data System (ADS)

Anitha, V. S.; Lekshmy, S. Sujatha; Berlin, I. John; Joy, K.

2014-01-01

Transparent nanocomposite ZrO2-SnO2 thin films were prepared by sol-gel dip-coating technique. Films were annealed at 500°C, 800°C and 1200°C respectively. X-ray diffraction(XRD) spectra showed a mixture of three phases: tetragonal ZrO2 and SnO2 and orthorhombic ZrSnO4. The grain size of all the three phases' increased with annealing temperature. An average transmittance greater than 85%(in UV-Visible region) is observed for all the films. The band gap for the films decreased from 4.79 eV to 4.62 eV with increase in annealing temperature from 500 to 1200 °C. The electrical resistivity increased with increase in annealing temperature. Such composite ZrO2-SnO2 films can be used in many applications and in optoelectronic devices.

Optical properties of dip coated titanium-di-oxide (TiO2) thin films annealed at different temperatures

NASA Astrophysics Data System (ADS)

Biswas, Sayari; Kar, Asit Kumar

2018-02-01

Titanium dioxide (TiO2) thin films were synthesized by hydrothermal assisted sol-gel dip coating method on quartz substrate. The sol was prepared by hydrothermal method at 90 °C. Dip coating method was used to deposit the thin films. Later films were annealed at four different temperatures -600 °C, 800 °C, 1000 °C and 1200 °C. XRD study showed samples annealed at 600 °C are almost amorphous. At 800 °C, film turns into anatase phase and with further increment of annealing temperature they turn into rutile phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60% was observed in the visible region for the sample annealed at the lowest temperature. Band gap of the prepared films varies from 2.9 eV to 3.5 eV.

ZnO Thin Film Electronics for More than Displays

NASA Astrophysics Data System (ADS)

Ramirez, Jose Israel

Zinc oxide thin film transistors (TFTs) are investigated in this work for large-area electronic applications outside of display technology. A constant pressure, constant flow, showerhead, plasma-enhanced atomic layer deposition (PEALD) process has been developed to fabricate high mobility TFTs and circuits on rigid and flexible substrates at 200 °C. ZnO films and resulting devices prepared by PEALD and pulsed laser deposition (PLD) have been compared. Both PEALD and PLD ZnO films result in densely packed, polycrystalline ZnO thin films that were used to make high performance devices. PEALD ZnO TFTs deposited at 300 °C have a field-effect mobility of ˜ 40 cm2/V-s (and > 20 cm2/V-S deposited at 200 °C). PLD ZnO TFTs, annealed at 400 °C, have a field-effect mobility of > 60 cm2/V-s (and up to 100 cm2/V-s). Devices, prepared by either technique, show high gamma-ray radiation tolerance of up to 100 Mrad(SiO2) with only a small radiation-induced threshold voltage shift (VT ˜ -1.5 V). Electrical biasing during irradiation showed no enhanced radiation-induced effects. The study of the radiation effects as a function of material stack thicknesses revealed the majority of the radiation-induced charge collection happens at the semiconductor-passivation interface. A simple sheet-charge model at that interface can describe the radiation-induced charge in ZnO TFTs. By taking advantage of the substrate-agnostic process provided by PEALD, due to its low-temperature and excellent conformal coatings, ZnO electronics were monolithically integrated with thin-film complex oxides. Application-based examples where ZnO electronics provide added functionality to complex oxide-based devices are presented. In particular, the integration of arrayed lead zirconate titanate (Pb(Zr, Ti)O3 or PZT) thin films with ZnO electronics for microelectromechanical systems (MEMs) and deformable mirrors is demonstrated. ZnO switches can provide voltage to PZT capacitors with fast charging and slow

Microstructure research for ferroelectric origin in the strained Hf0.5Zr0.5O2 thin film via geometric phase analysis

NASA Astrophysics Data System (ADS)

Bi, Han; Sun, Qingqing; Zhao, Xuebing; You, Wenbin; Zhang, David Wei; Che, Renchao

2018-04-01

Recently, non-volatile semiconductor memory devices using a ferroelectric Hf0.5Zr0.5O2 film have been attracting extensive attention. However, at the nano-scale, the phase structure remains unclear in a thin Hf0.5Zr0.5O2 film, which stands in the way of the sustained development of ferroelectric memory nano-devices. Here, a series of electron microscopy evidences have illustrated that the interfacial strain played a key role in inducing the orthorhombic phase and the distorted tetragonal phase, which was the origin of the ferroelectricity in the Hf0.5Zr0.5O2 film. Our results provide insight into understanding the association between ferroelectric performances and microstructures of Hf0.5Zr0.5O2-based systems.

Improved photoelectrochemical performance of BiVO4/MoO3 heterostructure thin films

NASA Astrophysics Data System (ADS)

Kodan, Nisha; Mehta, B. R.

2018-05-01

Bismuth vanadate (BiVO4) and Molybdenum trioxide (MoO3) thin films have been prepared by RF sputtering technique. BiVO4 thin films were deposited on indium doped tin oxide (In: SnO2; ITO) substrates at room temperature and 80W applied rf power. The prepared BiVO4 thin films were further annealed at 450°C for 2 hours in air to obtain crystalline monoclinic phase and successively coated with MoO3 thin films deposited at 150W rf power and 400°C for 30 minutes. The effect of coupling BiVO4 and MoO3 on the structural, optical and photoelectrochemical (PEC) properties have been studied. Optical studies reveal that coupling of BiVO4 and MoO3 results in improvement of optical absorption in visible region of solar spectrum. PEC study shows approximate 3-fold and 38-fold increment in photocurrent values of BiVO4/MoO3 (0.38 mA/cm2) heterostructure thin film as compared to MoO3 (0.15 mA/cm2) and BiVO4 (10 µA/cm2) thin films at applied bias of 1 V vs Ag/AgCl in 0.5 M Na2SO4 (pH=7) electrolyte.

Luminescence behaviour and deposition of Sc2O3 thin films from scandium(III) acetylacetonate at ambient pressure

NASA Astrophysics Data System (ADS)

Dixon, Sebastian C.; Jiamprasertboon, Arreerat; Carmalt, Claire J.; Parkin, Ivan P.

2018-05-01

Scandium(III) oxide thin film deposition has been historically difficult to achieve without the use of vacuum-based or wet chemical systems due to precursor limitations of low vapour pressure or ambient instability. In this letter, the adoption of aerosol-assisted delivery of scandium(III) acetylacetonate has enabled the chemical vapour deposition of polycrystalline and amorphous Sc2O3 thin films at ambient pressure with high growth rates (ca. 500 nm h-1). The scandia films were intrinsically highly photoluminescent, exhibiting broad emission bands centred at 3.6 and 3.0 eV, which increased significantly in intensity upon aerobic annealing, accompanying a transition from amorphous to crystalline, while bands appearing at 2.1 and 2.3 eV seemed to occur only in the crystalline films. In addition, both amorphous and crystalline scandia films exhibited blue-green vibronic fine structure between 2.3 and 3.2 eV attributed to the electronic transition B→κ Σ+ 2 Σ+ in surface ⋯ O - ⋯ O - S c = O groups and split by a vibrational mode observed at 920 ± 60 cm - 1 by infrared spectroscopy. Band gaps of amorphous and crystalline Sc2O3 were determined to be 5.3 and 5.7 eV, respectively via diffuse reflectance. All films had high refractive indices, varying between 1.8 and 2.0 at 400 nm depending on film thickness and carrier gas used in the deposition; film thicknesses less than ca. 300 nm were observed to have a strong influence on the refractive index measured, while there was little variation for films thicker than this. The synthesis process itself is exceedingly low-cost and facile thus promising streamlined industrial scalability.

A flexible amorphous Bi(5)Nb(3)O(15) film for the gate insulator of the low-voltage operating pentacene thin-film transistor fabricated at room temperature.

PubMed

Cho, Kyung-Hoon; Seong, Tae-Geun; Choi, Joo-Young; Kim, Jin-Seong; Kwon, Jae-Hong; Shin, Sang-Il; Chung, Myung-Ho; Ju, Byeong-Kwon; Nahm, Sahn

2009-10-20

The amorphous Bi(5)Nb(3)O(15) film grown at room temperature under an oxygen-plasma sputtering ambient (BNRT-O(2) film) has a hydrophobic surface with a surface energy of 35.6 mJ m(-2), which is close to that of the orthorhombic pentacene (38 mJ m(-2)), resulting in the formation of a good pentacene layer without the introduction of an additional polymer layer. This film was very flexible, maintaining a high capacitance of 145 nF cm(-2) during and after 10(5) bending cycles with a small curvature radius of 7.5 mm. This film was optically transparent. Furthermore, the flexible, pentacene-based, organic thin-film transistors (OTFTs) fabricated on the poly(ether sulfone) substrate at room temperature using a BNRT-O(2) film as a gate insulator exhibited a promising device performance with a high field effect mobility of 0.5 cm(2) V(-1) s(-1), an on/off current modulation of 10(5), and a small subthreshold slope of 0.2 V decade(-1) under a low operating voltage of -5 V. This device also maintained a high carrier mobility of 0.45 cm(2) V(-1 )s(-1) during the bending with a small curvature radius of 9 mm. Therefore, the BNRT-O(2) film is considered a promising material for the gate insulator of the flexible, pentacene-based OTFT.

Preparation of Zinc Oxide (ZnO) Thin Film as Transparent Conductive Oxide (TCO) from Zinc Complex Compound on Thin Film Solar Cells: A Study of O2 Effect on Annealing Process

NASA Astrophysics Data System (ADS)

Muslih, E. Y.; Kim, K. H.

2017-07-01

Zinc oxide (ZnO) thin film as a transparent conductive oxide (TCO) for thin film solar cell application was successfully prepared through two step preparations which consisted of deposition by spin coating at 2000 rpm for 10 second and followed by annealing at 500 °C for 2 hours under O2 and ambient atmosphere. Zinc acetate dehydrate was used as a precursor which dissolved in ethanol and acetone (1:1 mol) mixture in order to make a zinc complex compound. In this work, we reported the O2 effect, reaction mechanism, structure, morphology, optical and electrical properties. ZnO thin film in this work shows a single phase of wurtzite, with n-type semiconductor and has band gap, carrier concentration, mobility, and resistivity as 3.18 eV, 1.21 × 10-19cm3, 11 cm2/Vs, 2.35 × 10-3 Ωcm respectively which is suitable for TCO at thin film solar cell.

Epitaxial Bi2 FeCrO6 Multiferroic Thin Film as a New Visible Light Absorbing Photocathode Material.

PubMed

Li, Shun; AlOtaibi, Bandar; Huang, Wei; Mi, Zetian; Serpone, Nick; Nechache, Riad; Rosei, Federico

2015-08-26

Ferroelectric materials have been studied increasingly for solar energy conversion technologies due to the efficient charge separation driven by the polarization induced internal electric field. However, their insufficient conversion efficiency is still a major challenge. Here, a photocathode material of epitaxial double perovskite Bi(2) FeCrO(6) multiferroic thin film is reported with a suitable conduction band position and small bandgap (1.9-2.1 eV), for visible-light-driven reduction of water to hydrogen. Photoelectrochemical measurements show that the highest photocurrent density up to -1.02 mA cm(-2) at a potential of -0.97 V versus reversible hydrogen electrode is obtained in p-type Bi(2) FeCrO(6) thin film photocathode grown on SrTiO(3) substrate under AM 1.5G simulated sunlight. In addition, a twofold enhancement of photocurrent density is obtained after negatively poling the Bi(2) FeCrO(6) thin film, as a result of modulation of the band structure by suitable control of the internal electric field gradient originating from the ferroelectric polarization in the Bi(2) FeCrO(6) films. The findings validate the use of multiferroic Bi(2) FeCrO(6) thin films as photocathode materials, and also prove that the manipulation of internal fields through polarization in ferroelectric materials is a promising strategy for the design of improved photoelectrodes and smart devices for solar energy conversion. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Damage evolution of ion irradiated defected-fluorite La 2 Zr 2 O 7 epitaxial thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaspar, Tiffany C.; Gigax, Jonathan G.; Shao, Lin

2017-05-01

Pyrochlore-structure oxides, A2B2O7, may exhibit remarkable radiation tolerance due to the ease with which they can accommodate disorder by transitioning to a defected fluorite structure. The mechanism of defect formation was explored by evaluating the radiation damage behavior of high quality epitaxial La2Zr2O7 thin films with the defected fluorite structure, irradiated with 1 MeV Zr+ at doses up to 10 displacements per atom (dpa). The level of film damage was evaluated as a function of dose by Rutherford backscattering spectrometry in the channeling geometry (RBS/c) and scanning transmission electron microscopy (STEM). At lower doses, the surface of the La2Zr2O7 filmmore » amorphized, and the amorphous fraction as a function of dose fit well to a stimulated amorphization model. As the dose increased, the surface amorphization slowed, and amorphization appeared at the interface. Even at a dose of 10 dpa, the core of the film remained crystalline, despite the prediction of amorphization from the model. To inform future ab initio simulations of La2Zr2O7, the bandgap of a thick La2Zr2O7 film was measured to be indirect at 4.96 eV, with a direct transition at 5.60 eV.« less

Thermoelectric Properties of Al-Doped ZnO Thin Films

NASA Astrophysics Data System (ADS)

Saini, S.; Mele, P.; Honda, H.; Matsumoto, K.; Miyazaki, K.; Ichinose, A.

2014-06-01

We have prepared 2 % Al-doped ZnO (AZO) thin films on SrTiO3 substrates by a pulsed laser deposition technique at various deposition temperatures ( T dep = 300-600 °C). The thermoelectric properties of AZO thin films were studied in a low temperature range (300-600 K). Thin film deposited at 300 °C is fully c-axis-oriented and presents electrical conductivity 310 S/cm with Seebeck coefficient -65 μV/K and power factor 0.13 × 10-3 Wm-1 K-2 at 300 K. The performance of thin films increases with temperature. For instance, the power factor is enhanced up to 0.55 × 10-3 Wm-1 K-2 at 600 K, surpassing the best AZO film previously reported in the literature.

Physical properties of nanostructured CeO2 thin films grown by SILAR method

NASA Astrophysics Data System (ADS)

Khan, Ishaque Ahmed; Belkhedkar, M. R.; Salodkar, R. V.; Ubale, A. U.

2018-05-01

Nanostructured CeO2 thin films have been deposited by Successive Ionic Layer Adsorption and Reaction (SILAR) method onto glass substrate using (CeNO3)3 6H2O and NaOH as cationic and anionic precursors respectively. The structural and morphological characterizations were carried out by means of X-ray diffraction, FTIR, FESEM and EDX studies. The highly resistive (1010 Ω cm) semiconducting CeO2 film exhibits 2.95 eV optical band gap.

A Highly Thermostable In2O3/ITO Thin Film Thermocouple Prepared via Screen Printing for High Temperature Measurements

PubMed Central

Liu, Yantao; Ren, Wei; Shi, Peng; Liu, Dan; Zhang, Yijun; Liu, Ming; Jing, Weixuan; Tian, Bian; Jiang, Zhuangde

2018-01-01

An In2O3/ITO thin film thermocouple was prepared via screen printing. Glass additives were added to improve the sintering process and to increase the density of the In2O3/ITO films. The surface and cross-sectional images indicate that both the grain size and densification of the ITO and In2O3 films increased with the increase in annealing time. The thermoelectric voltage of the In2O3/ITO thermocouple was 53.5 mV at 1270 °C at the hot junction. The average Seebeck coefficient of the thermocouple was calculated as 44.5 μV/°C. The drift rate of the In2O3/ITO thermocouple was 5.44 °C/h at a measuring time of 10 h at 1270 °C. PMID:29570680

Controlling the ferroelectric and resistive switching properties of a BiFeO3 thin film prepared using sub-5 nm dimension nanoparticles.

PubMed

Shirolkar, Mandar M; Li, Jieni; Dong, Xiaolei; Li, Ming; Wang, Haiqian

2017-10-04

In recent years, BiFeO 3 has attracted significant attention as an interesting multiferroic material in the exploration of fundamental science and development of novel applications. Our previous study (Phys. Chem. Chem. Phys.18, 2016, 25409) highlighted the interesting physicochemical features of BiFeO 3 of sub-5 nm dimension. The study also accentuated the existence of weak ferroelectricity at sub-5 nm dimensions in BiFeO 3 . Based on this feature, we have prepared thin films using sub-5 nm BiFeO 3 nanoparticles and explored various physicochemical properties of the thin film. We report that during the formation of the thin film, the nanoparticles aggregated; particularly, annihilation of their nanotwinning nature was observed. Qualitatively, the Gibbs free energy change ΔG governed the abovementioned processes. The thin film exhibited an R3c phase and enhanced Bi-O-Fe coordination as compared to the sub-5 nm nanoparticles. Raman spectroscopy under the influence of a magnetic field shows a magnetoelectric effect, spin phonon coupling, and magnetic anisotropy. We report room-temperature ferroelectric behavior in the thin film, which enhances with the application of a magnetic field; this confirms the multiferroic nature of the thin film. The thin film shows polarization switching ability at multiple voltages and read-write operation at low bias (±0.5 V). Furthermore, the thin film shows negative differential-complementary resistive switching behavior in the nano-microampere current range. We report nearly stable 1-bit operation for 10 2 cycles, 10 5 voltage pulses, and 10 5 s, demonstrating the paradigm device applications. The observed results thus show that the thin films prepared using sub-5 nm BiFeO 3 nanoparticles are a promising candidate for future spintronics and memory applications. The reported approach can also be pertinent to explore the physicochemical properties and develop potential applications of several other nanoparticles.

Giant negative electrocaloric effect in PbZrO3/0.88BaTiO3-0.12Bi(Mg1/2,Ti1/2)O3 multilayered composite ferroelectric thin film for solid-state refrigeration

NASA Astrophysics Data System (ADS)

Huang, D.; Wang, J. B.; Zhong, X. L.; Li, B.; Zhang, Y.; Jin, C.; Zheng, D. F.; Meng, X. J.

2017-11-01

A giant negative electrocaloric (EC) effect in a PbZrO3/(0.88BaTiO3-0.12 Bi(Mg1/2,Ti1/2)O3) (PZ/(BT-BMT)) multilayered composite ferroelectric (MCFE) thin film which is grown on Pt(111)/Ti/SiO2/Si(100) substrates by the sol-gel method is investigated in this work. The negative EC effect in the PZ/(BMT-BT) MCFE thin film is greatly higher than that in the PZ AFE thin film with an adiabatic temperature change (ATC) ΔT = 1.5 K. The ATC ΔT of the PZ/(BMT-BT) MCFE thin film is -32 K under the applied electric field change ΔE = 1151 kV/cm. The result is conducive to enhance the EC refrigeration efficiency greatly.

Understanding the influence of surface chemical states on the dielectric tunability of sputtered Ba0.5Sr0.5TiO3 thin films

NASA Astrophysics Data System (ADS)

Venkata Saravanan, K.; Raju, K. C. James

2014-03-01

The surface chemical states of RF-magnetron sputtered Ba0.5Sr0.5TiO3 (BST5) thin films deposited at different oxygen mixing percentage (OMP) was examined by x-ray photoelectron spectroscopy. The O1s XPS spectra indicate the existence of three kinds of oxygen species (dissociated oxygen ion O2 -, adsorbed oxide ion O- and lattice oxide ion O2-) on the films’ surface, which strongly depends on OMP. The presence of oxygen species other than lattice oxygen ion makes the films’ surface highly reactivity to atmospheric gases, resulting in the formation of undesired surface layers. The XPS results confirm the formation of surface nitrates for the films deposited under oxygen deficient atmosphere (OMP ≦̸ 25%), whereas the films deposited in oxygen rich atmosphere (OMP ≧̸ 75%) show the presence of metal-hydroxide. The influence of a surface dead layer on the tunable dielectric properties of BST5 films have been studied in detail and are reported. Furthermore, our observations indicate that an optimum ratio of Ar:O2 is essential for achieving desired material and dielectric properties in BST5 thin films. The films deposited at 50% OMP have the highest dielectric tunability of ~65% (@280 kV cm-1), with good ɛ r-E curve symmetry of 98% and low tan δ of 0.018. The figure of merit for these films is about 35, which is promising for frequency agile device applications.

Exploring ferroelectric and magnetic properties of Tb-substituted m = 5 layered Aurivillius phase thin films

NASA Astrophysics Data System (ADS)

Faraz, Ahmad; Ricote, Jesus; Jimenez, Ricardo; Maity, Tuhin; Schmidt, Michael; Deepak, Nitin; Roy, Saibal; Pemble, Martyn E.; Keeney, Lynette

2018-03-01

Here, we report the effect of A-site substitution of Tb at the expense of Bi on the ferroelectric and magnetic properties in m = 5 layered 2-D Aurivillius Bi6Ti3Fe2O18 thin films. The nominal stoichiometry of the prepared compound is Tb0.40Bi5.6Fe2Ti3O18, Tb0.90Bi5.1Fe2Ti3O18, and Bi6Ti3Fe2O18. Phase examination reveals that only 0.40 mol. % is successfully substituted forming Tb0.40Bi5.6Fe2Ti3O18 thin films. Lateral and vertical piezoresponse switching loops up to 200 °C reveal responses for Bi6Ti3Fe2O18, Tb substituted Tb0.40Bi5.6Fe2Ti3O18, and Tb0.90Bi5.1Fe2Ti3O18 thin films along the in-plane (±42.31 pm/V, 88 pm/V and ±134 pm/V, respectively) compared with the out-of-plane (±6.15 pm/V, 19.83 pm/V and ±37.52 pm/V, respectively). The macroscopic in-plane polarization loops reveal in-plane saturation (Ps) and remanence polarization (Pr) for Bi6Ti3Fe2O18 of ±26.16 μC/cm2 and ±22 μC/cm2, whereas, ±32.75 μC/cm2 and ±22.11 μC/cm2, ±40.30 μC/cm2 and ±28.5 μC/cm2 for Tb0.40Bi5.6Fe2Ti3O18 and Tb0.90Bi5.1Fe2Ti3O18 thin films, respectively. No ferromagnetic signatures were observed for Bi6Ti3Fe2O18 and Tb0.40Bi5.6Fe2Ti3O18. However, a weak response was observed for the Tb0.90Bi5.1Fe2Ti3O18 at 2 K. Microstructural analysis of Tb0.90Bi5.1Fe2Ti3O18 revealed that it contains 4 vol. % Fe:Tb rich areas forming FexTbyOz, which accounts for the observed magnetic moment. This study demonstrates the importance of thorough microstructural analysis when determining whether magnetic signatures can be reliably assigned to the single-phase system. We conclude that Tb0.40Bi5.6Fe2Ti3O18 and Tb0.90Bi5.1Fe2Ti3O18 samples are not multiferroic but demonstrate the potential for Fe-RAM applications.

Comparison of structural and electrical properties of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for α-InGaZnO thin-film transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Tung-Ming, E-mail: tmpan@mail.cgu.edu.tw; Chen, Ching-Hung; Her, Jim-Long

We compared the structural properties and electrical characteristics of high-κ Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} gate dielectrics for amorphous indium-gallium-zinc oxide (α-InGaZnO) thin-film transistor (TFT) applications. The Lu{sub 2}O{sub 3} film has a strong Lu{sub 2}O{sub 3} (400) peak in the X-ray diffraction pattern, while the Lu{sub 2}TiO{sub 5} sample shows a relatively weak Lu{sub 2}TiO{sub 5} (102) peak. Atomic force microscopy reveals that the Lu{sub 2}O{sub 3} dielectric exhibits a rougher surface (about three times) than Lu{sub 2}TiO{sub 5} one. In X-ray photoelectron spectroscopy analysis, we found that the intensity of the O 1s peak corresponding tomore » Lu(OH){sub x} for Lu{sub 2}O{sub 3} film was higher than that of Lu{sub 2}TiO{sub 5} film. Furthermore, compared with the Lu{sub 2}O{sub 3} dielectric, the α-InGaZnO TFT using the Lu{sub 2}TiO{sub 5} gate dielectric exhibited a lower threshold voltage (from 0.43 to 0.25 V), a higher I{sub on}/I{sub off} current ratio (from 3.5 × 10{sup 6} to 1.3 × 10{sup 8}), a smaller subthreshold swing (from 276 to 130 mV/decade), and a larger field-effect mobility (from 14.5 to 24.4 cm{sup 2}/V s). These results are probably due to the incorporation of TiO{sub x} into the Lu{sub 2}O{sub 3} film to form a Lu{sub 2}TiO{sub 5} structure featuring a smooth surface, a low moisture absorption, a high dielectric constant, and a low interface state density at the oxide/channel interface. Furthermore, the stability of Lu{sub 2}O{sub 3} and Lu{sub 2}TiO{sub 5} α-InGaZnO TFTs was investigated under positive gate-bias stress (PGBS) and negative gate-bias stress (NGBS). The threshold voltage of the TFT performed under NGBS is more degradation than that under PGBS. This behavior may be attributed to the electron charge trapping at the dielectric–channel interface under PGBS, whereas the oxygen vacancies occurred in the InGaZnO under NGBS.« less

Transparent Conducting Mo-Doped CdO Thin Films by Spray Pyrolysis Method for Solar Cell Applications

NASA Astrophysics Data System (ADS)

Helen, S. J.; Devadason, Suganthi; Haris, M.; Mahalingam, T.

2018-04-01

Pure and 3%, 5%, and 7% molybdenum-doped cadmium oxide (CdO) thin films have been prepared on glass substrates preheated to 400°C using a spray pyrolysis technique, then analyzed using x-ray diffraction analysis, field-emission scanning electron microscopy, ultraviolet-visible spectroscopy, and photoluminescence and Hall measurements. The films were found to have polycrystalline nature with cubic structure. The crystallite size was calculated to be ˜ 12 nm for various doping concentrations. Doping improved the optical transparency of the CdO thin film, with the 5% Mo-doped film recording the highest transmittance in the optical region. The energy bandgap deduced from optical studies ranged from 2.38 eV and 2.44 eV for different Mo doping levels. The electrical conductivity was enhanced on Mo doping, with the highest conductivity of 1.74 × 103 (Ω cm)-1 being achieved for the 5% Mo-doped CdO thin film.

Near-ambient pressure XPS of high-temperature surface chemistry in Sr2Co2O5 thin films

DOE PAGES

Hong, Wesley T.; Stoerzinger, Kelsey; Crumlin, Ethan J.; ...

2016-02-11

Transition metal perovskite oxides are promising electrocatalysts for the oxygen reduction reaction (ORR) in fuel cells, but a lack of fundamental understanding of oxide surfaces impedes the rational design of novel catalysts with improved device efficiencies. In particular, understanding the surface chemistry of oxides is essential for controlling both catalytic activity and long-term stability. Thus, elucidating the physical nature of species on perovskite surfaces and their catalytic enhancement would generate new insights in developing oxide electrocatalysts. In this article, we perform near-ambient pressure XPS of model brownmillerite Sr 2Co 2O 5 (SCO) epitaxial thin films with different crystallographic orientations. Detailedmore » analysis of the Co 2p spectra suggests that the films lose oxygen as a function of temperature. Moreover, deconvolution of the O 1s spectra shows distinct behavior for (114)-oriented SCO films compared to (001)-oriented SCO films, where an additional bulk oxygen species is observed. These findings indicate a change to a perovskite-like oxygen chemistry that occurs more easily in (114) SCO than (001) SCO, likely due to the orientation of oxygen vacancy channels out-of-plane with respect to the film surface. This difference in surface chemistry is responsible for the anisotropy of the oxygen surface exchange coefficient of SCO and may contribute to the enhanced ORR kinetics of La 0.8Sr 0.2CoO 3-δ thin films by SCO surface particles observed previously.« less

Dye sensitized solar cell applications of CdTiO3-TiO2 composite thin films deposited from single molecular complex

NASA Astrophysics Data System (ADS)

Ehsan, Muhammad Ali; Khaledi, Hamid; Pandikumar, Alagarsamy; Huang, Nay Ming; Arifin, Zainudin; Mazhar, Muhammad

2015-10-01

A heterobimetallic complex [Cd2Ti4(μ-O)6(TFA)8(THF)6]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO3-TiO2 composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity, phase identification and chemical composition of microspherical architectured CdTiO3-TiO2 composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application.

Properties of NiZnO Thin Films with Different Amounts of Al Doping

NASA Astrophysics Data System (ADS)

Kayani, Zohra N.; Fatima, Gulnaz; Zulfiqar, Bareera; Riaz, Saira; Naseem, Shahzad

2017-10-01

Transparent Al-doped NiZnO thin films have been fabricated by sol-gel dip coating and investigated using scanning electron microscopy, x-ray diffraction analysis, ultraviolet-visible-near infrared (UV-Vis-NIR) spectrophotometry, vibrating-sample magnetometry, and Fourier-transform infrared spectroscopy. The Al-doped NiZnO films consisted of ZnO hexagonal and α-Al2O3 rhombohedral phases as the Al incorporation was gradually increased from 1 at.% up to 3 at.%. A decrease in the optical bandgap from 3.90 eV to 3.09 eV was observed for films grown with Al content of 1 at.% to 2.5 at.%, but at 3 at.% Al, the bandgap increased to 3.87 eV. Optical transmittance of 96% was achieved for these transparent oxide films. Study of their magnetic properties revealed that increasing Al percentage resulted in enhanced ferromagnetism. The saturated magnetization increased with increasing Al percentage. The ferromagnetic properties of Al-doped NiZnO are mediated by electrons. The surface of the deposited thin films consisted of nanowires, nanorods, porous surface, and grains.

Determination of structural, mechanical and corrosion properties of Nb2O5 and (NbyCu 1-y)Ox thin films deposited on Ti6Al4V alloy substrates for dental implant applications.

PubMed

Mazur, M; Kalisz, M; Wojcieszak, D; Grobelny, M; Mazur, P; Kaczmarek, D; Domaradzki, J

2015-02-01

In this paper comparative studies on the structural, mechanical and corrosion properties of Nb2O5/Ti and (NbyCu1-y)Ox/Ti alloy systems have been investigated. Pure layers of niobia and niobia with a copper addition were deposited on a Ti6Al4V titanium alloy surface using the magnetron sputtering method. The physicochemical properties of the prepared thin films were examined with the aid of XRD, XPS SEM and AFM measurements. The mechanical properties (i.e., nanohardness, Young's modulus and abrasion resistance) were performed using nanoindentation and a steel wool test. The corrosion properties of the coatings were determined by analysis of the voltammetric curves. The deposited coatings were crack free, exhibited good adherence to the substrate, no discontinuity of the thin film was observed and the surface morphology was homogeneous. The hardness of pure niobium pentoxide was ca. 8.64GPa. The obtained results showed that the addition of copper into pure niobia resulted in the preparation of a layer with a lower hardness of ca. 7.79 GPa (for niobia with 17 at.% Cu) and 7.75 GPa (for niobia with 25 at.% Cu). The corrosion properties of the tested thin films deposited on the surface of titanium alloy depended on the composition of the thin layer. The addition of copper (i.e. a noble metal) to Nb2O5 film increased the corrosion resistance followed by a significant decrease in the value of corrosion currents and, in case of the highest Cu content, the shift of corrosion potential towards the noble direction. The best corrosion properties were obtained from a sample of Ti6Al4V coated with (Nb0.75Cu0.25)Ox thin film. It seems that the tested materials could be used in the future as protection coatings for Ti alloys in biomedical applications such as implants. Copyright © 2014. Published by Elsevier B.V.

Photocurrent generation in SnO2 thin film by surface charged chemisorption O ions

NASA Astrophysics Data System (ADS)

Lee, Po-Ming; Liao, Ching-Han; Lin, Chia-Hua; Liu, Cheng-Yi

2018-06-01

We report a photocurrent generation mechanism in the SnO2 thin film surface layer by the charged chemisorption O ions on the SnO2 thin film surface induced by O2-annealing. A critical build-in electric field in the SnO2 surface layer resulted from the charged O ions on SnO2 surface prolongs the lifetime and reduces the recombination probability of the photo-excited electron-hole pairs by UV-laser irradiation (266 nm) in the SnO2 surface layer, which is the key for the photocurrent generation in the SnO2 thin film surface layer. The critical lifetime of prolonged photo-excited electron-hole pair is calculated to be 8.3 ms.

Electrical and optical properties of nitrogen doped SnO{sub 2} thin films deposited on flexible substrates by magnetron sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Fang, Feng, E-mail: fangfeng@seu.edu.cn; Zhang, Yeyu; Wu, Xiaoqin

2015-08-15

Graphical abstract: The best SnO{sub 2}:N TCO film: about 80% transmittance and 9.1 × 10{sup −4} Ω cm. - Highlights: • Nitrogen-doped tin oxide film was deposited on PET by RF-magnetron sputtering. • Effects of oxygen partial pressure on the properties of thin films were investigated. • For SnO{sub 2}:N film, visible light transmittance was 80% and electrical resistivity was 9.1 × 10{sup −4} Ω cm. - Abstract: Nitrogen-doped tin oxide (SnO{sub 2}:N) thin films were deposited on flexible polyethylene terephthalate (PET) substrates at room temperature by RF-magnetron sputtering. Effects of oxygen partial pressure (0–4%) on electrical and optical propertiesmore » of thin films were investigated. Experimental results showed that SnO{sub 2}:N films were amorphous state, and O/Sn ratios of SnO{sub 2}:N films were deviated from the standard stoichiometry 2:1. Optical band gap of SnO{sub 2}:N films increased from approximately 3.10 eV to 3.42 eV as oxygen partial pressure increased from 0% to 4%. For SnO{sub 2}:N thin films deposited on PET, transmittance was about 80% in the visible light region. The best transparent conductive oxide (TCO) deposited on flexible PET substrates was SnO{sub 2}:N thin films preparing at 2% oxygen partial pressure, the transmittance was about 80% and electrical conductivity was about 9.1 × 10{sup −4} Ω cm.« less

Nanostructured PdO Thin Film from Langmuir-Blodgett Precursor for Room-Temperature H2 Gas Sensing.

PubMed

Choudhury, Sipra; Betty, C A; Bhattacharyya, Kaustava; Saxena, Vibha; Bhattacharya, Debarati

2016-07-06

Nanoparticulate thin films of PdO were prepared using the Langmuir-Blodgett (LB) technique by thermal decomposition of a multilayer film of octadecylamine (ODA)-chloropalladate complex. The stable complex formation of ODA with chloropalladate ions (present in subphase) at the air-water interface was confirmed by the surface pressure-area isotherm and Brewster angle microscopy. The formation of nanocrystalline PdO thin film after thermal decomposition of as-deposited LB film was confirmed by X-ray diffraction and Raman spectroscopy. Nanocrystalline PdO thin films were further characterized by using UV-vis and X-ray photoelectron spectroscopic (XPS) measurements. The XPS study revealed the presence of prominent Pd(2+) with a small quantity (18%) of reduced PdO (Pd(0)) in nanocrystalline PdO thin film. From the absorption spectroscopic measurement, the band gap energy of PdO was estimated to be 2 eV, which was very close to that obtained from specular reflectance measurements. Surface morphology studies of these films using atomic force microscopy and field-emission scanning electron microscopy indicated formation of nanoparticles of size 20-30 nm. These PdO film when employed as a chemiresistive sensor showed H2 sensitivity in the range of 30-4000 ppm at room temperature. In addition, PdO films showed photosensitivity with increase in current upon shining of visible light.

Fabrication of solution-processed InSnZnO/ZrO2 thin film transistors.

PubMed

Hwang, Soo Min; Lee, Seung Muk; Choi, Jun Hyuk; Lim, Jun Hyung; Joo, Jinho

2013-11-01

We fabricated InSnZnO (ITZO) thin-film transistors (TFTs) with a high-permittivity (K) ZrO2 gate insulator using a solution process and explored the microstructure and electrical properties. ZrO2 and ITZO (In:Sn:Zn = 2:1:1) precursor solutions were deposited using consecutive spin-coating and drying steps on highly doped p-type Si substrate, followed by annealing at 700 degrees C in ambient air. The ITZO/ZrO2 TFT device showed n-channel depletion mode characteristics, and it possessed a high saturation mobility of approximately 9.8 cm2/V x s, a small subthreshold voltage swing of approximately 2.3 V/decade, and a negative V(TH) of approximately 1.5 V, but a relatively low on/off current ratio of approximately 10(-3). These results were thought to be due to the use of the high-kappa crystallized ZrO2 dielectric (kappa approximately 21.8) as the gate insulator, which could permit low-voltage operation of the solution-processed ITZO TFT devices for applications to high-throughput, low-cost, flexible and transparent electronics.

Dip coated TiO2 nanostructured thin film: synthesis and application

NASA Astrophysics Data System (ADS)

Vanaraja, Manoj; Muthukrishnan, Karthika; Boomadevi, Shanmugam; Karn, Rakesh Kumar; Singh, Vijay; Singh, Pramod K.; Pandiyan, Krishnamoorthy

2016-02-01

TiO2 thin film was fabricated by dip coating method using titanium IV chloride as precursor and sodium carboxymethyl cellulose as thickening as well as capping agent. Structural and morphological features of TiO2 thin film were characterized by X-ray diffractometer and field emission scanning electron microscope, respectively. Crystallinity of the film was confirmed with high-intensity peak at (101) plane, and its average crystallite size was found to be 28 nm. The ethanol-sensing properties of TiO2 thin film was studied by the chemiresistive method. Furthermore, various gases were tested in order to verify the selectivity of the sensor. Among the several gases, the fabricated TiO2 sensor showed very high selectivity towards ethanol at room temperature.

Optical, mechanical and structural properties of PMMA/SiO2 nanocomposite thin films

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-01-01

We have fabricated PMMA/SiO2 nanocomposite flexible thin films of 60 μm thicknesses by using solution casting method in the presence of transverse electric field. In this paper, we have investigated the effect of SiO2 nanoparticle (NP) loading on optical and mechanical properties of the composite thin film. The SEM images show that nanocomposite thin films have a smoother and uniform morphology. The transmittance peak near 1103 cm-1 in FT-IR spectrum confirms the presence of SiO2 NPs in the composite thin film. It is observed that optical bandgap decreases with an increase in the SiO2 NP concentration. Dynamic mechanical analysis shows that presence of SiO2 NP enhances the mechanical strength of the composite thin film.

High Responsivity MgZnO Ultraviolet Thin-Film Phototransistor Developed Using Radio Frequency Sputtering

PubMed Central

Li, Jyun-Yi; Chang, Sheng-Po; Hsu, Ming-Hung; Chang, Shoou-Jinn

2017-01-01

We investigated the electrical and optoelectronic properties of a magnesium zinc oxide thin-film phototransistor. We fabricate an ultraviolet phototransistor by using a wide-bandgap MgZnO thin film as the active layer material of the thin film transistor (TFT). The fabricated device demonstrated a threshold voltage of 3.1 V, on–off current ratio of 105, subthreshold swing of 0.8 V/decade, and mobility of 5 cm2/V·s in a dark environment. As a UV photodetector, the responsivity of the device was 3.12 A/W, and the rejection ratio was 6.55 × 105 at a gate bias of −5 V under 290 nm illumination. PMID:28772487

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Ionic liquid versus SiO 2 gated a-IGZO thin film transistors: A direct comparison

DOE PAGES

Pudasaini, Pushpa Raj; Noh, Joo Hyon; Wong, Anthony T.; ...

2015-08-12

Here, ionic liquid gated field effect transistors have been extensively studied due to their low operation voltage, ease of processing and the realization of high electric fields at low bias voltages. Here, we report ionic liquid (IL) gated thin film transistors (TFTs) based on amorphous Indium Gallium Zinc Oxide (a-IGZO) active layers and directly compare the characteristics with a standard SiO 2 gated device. The transport measurements of the top IL gated device revealed the n-channel property of the IGZO thin film with a current ON/OFF ratio ~10 5, a promising field effect mobility of 14.20 cm 2V –1s –1,more » and a threshold voltage of 0.5 V. Comparable measurements on the bottom SiO2 gate insulator revealed a current ON/OFF ratio >108, a field effect mobility of 13.89 cm 2V –1s –1 and a threshold voltage of 2.5 V. Furthermore, temperature-dependent measurements revealed that the ionic liquid electric double layer can be “frozen-in” by cooling below the glass transition temperature with an applied electrical bias. Positive and negative freezing bias locks-in the IGZO TFT “ON” and “OFF” state, respectively, which could lead to new switching and possibly non-volatile memory applications.« less

Optical and semiconductive properties of binary and ternary thin films from the Nb-Ti-O system

NASA Astrophysics Data System (ADS)

Aperador, W.; Yate, L.; Pinzón, M. J.; Caicedo, J. C.

2018-06-01

A study has been conducted based on the Mott-Schottky model acquisition by potentiodynamic electrochemical impedance spectroscopy, to determine the physical-chemical properties of binary TiO2, Nb2O5 and ternary Nb-Ti-O thin films (semiconductor type) based on Nb,Ti, O elements. The technique used for the study of optical properties was that of spectral transmittance, measurements were performed using a spectrophotometer. The consistency of the impedance data has been studied by calculating the Kramers-Kronig relations. The structural properties were analyzed by XRD patterns; the chemical composition measurements for all thin films were made by using XPS technique. So, in this research the transmittance values change from 72.74% for Nb2O5 to 59.68% for Ti-Nb-O with wavelength around 355 nm. The absorption coefficients for all films were analyzed from 31823.87 cm-1 for Nb2O5 to 91240.90 cm-1 for Nb-Ti-O with wavelength around 355 nm evidencing thus a 65% reduction. The direct band gap it was found that the photon energy (band gap Eg) changes in all films from 3.56 eV for Nb2O5 to 3.96 eV for Ti-Nb-O evidencing a 10% reduction. The extinction coefficient values change in all films from 0.038 cm-1 for Nb2O5 to 0.277 cm-1 for Ti-Nb-O films with wavelength around 355 nm, exhibiting an 86% increasing. Finally, it was observed by the Mott-Schottky analysis that the reference potential (Ag/AgCl) changes for all films from -2.09 V for Nb2O5 to -0.80 V for Ti-Nb-O material showing a 62% reduction.

Multiferroic YCrO3 thin films grown on glass substrate: Resistive switching characteristics

NASA Astrophysics Data System (ADS)

Seo, Jeongdae; Ahn, Yoonho; Son, Jong Yeog

2016-01-01

Polycrystalline YCrO3 thin films were deposited on (111) Pt/Ta/glass substrates by pulsed laser deposition. The YCrO3 thin films exhibited good ferroelectric properties with remnant polarization of about 5 µC/cm2. Large leakage current was observed by I- V curve and ferroelectric hysteresis loop. The YCrO3 resistive random access memory (RRAM) capacitor showed unipolar switching behaviors with SET and RESET voltages higher than those of general NiO RRAM capacitors. [Figure not available: see fulltext.

Deposition of tetracene thin films on SiO2/Si substrates by rapid expansion of supercritical solutions using carbon dioxide

NASA Astrophysics Data System (ADS)

Fujii, Tatsuya; Takahashi, Yuta; Uchida, Hirohisa

2015-03-01

We report on a novel deposition technique of tetracene (naphthacene) thin films on SiO2/Si substrates by rapid expansion of supercritical solutions (RESS) using CO2. Optical microscopy and scanning electron microscopy show that the thin films consist of a high density of submicron-sized grains. The growth mode of the grains followed the Volmer-Weber mode. X-ray diffraction shows that the thin films have regularly arranged structures in both the horizontal and vertical directions of the substrate. A fabricated top-contacted organic thin-film transistor with the tetracene active layer showed p-type transistor characteristics with a field-effect mobility of 5.1 × 10-4 cm2 V-1 s-1.

Synthesis of LiCoO 2 thin films by sol/gel process

NASA Astrophysics Data System (ADS)

Porthault, H.; Le Cras, F.; Franger, S.

LiCoO 2 thin films were synthesized by sol/gel process using acrylic acid (AA) as chelating agent. The gel formulation was optimized by varying solvent (ethylene glycol or water) and precursors molar ratios (Li, Co, AA) in order to obtain a dense film for positive electrode of lithium batteries. The gel was deposited by spin-coating technique on an Au/TiO 2/SiN/SiO 2/Si substrate. Thin films were deposited by either single or multistep process to enhance the density of the thin film and then calcined during 5 h at 800 °C to obtain the R-3m phase (HT-LiCoO 2). A chemical characterization of the solution was realized by Fourier Transform Infrared (FTIR) spectroscopy. Thermal decomposition of precursors and gel was studied by Thermo Gravimetric Analyses (TGA). Further investigations were done to characterize rheologic behaviour of the gel and solvents affinity with the substrate. Crystallinity and morphology were analyzed respectively by X-ray diffraction (XRD) and Scanning Electron Microscopy (SEM). The formation of R-3m phase was confirmed by the electrochemical behaviour of the gel derived LiCoO 2. Cyclic voltammograms and galvanostatic cycling show typical curve shape of the HT-LiCoO 2.

Synthesis and characterization of Zn(O,OH)S and AgInS2 layers to be used in thin film solar cells

NASA Astrophysics Data System (ADS)

Vallejo, W.; Arredondo, C. A.; Gordillo, G.

2010-11-01

In this paper AgInS2 and Zn(O,OH)S thin films were synthesized and characterized. AgInS2 layers were grown by co-evaporation from metal precursors in a two-step process, and, Zn(O,OH)S thin films were deposited from chemical bath containing thiourea, zinc acetate, sodium citrate and ammonia. X-ray diffraction measurements indicated that AgInS2 thin films grown with chalcopyrite structure, and the as-grown Zn(O,OH)S thin films were polycrystalline. It was also found that the AgInS2 films presented p-type conductivity, a high absorption coefficient (greater than 104 cm-1) and energy band-gap Eg of about 1.95 eV, Zn(O,OH),S thin films presented Eg of about 3.89 eV. Morphological analysis showed that under this synthesis conditions Zn(O,OH),S thin films coated uniformly the absorber layer. Additionally, the Zn(O,OH)S kinetic growth on AgInS2 layer was studied also. Finally, the results suggest that these layers possibly could be used in one-junction solar cells and/or as top cell in a tandem solar cell.

Atomic layer deposition and properties of ZrO2/Fe2O3 thin films

PubMed Central

Seemen, Helina; Ritslaid, Peeter; Rähn, Mihkel; Tamm, Aile; Kukli, Kaupo; Kasikov, Aarne; Link, Joosep; Stern, Raivo; Dueñas, Salvador; Castán, Helena; García, Héctor

2018-01-01

Thin solid films consisting of ZrO2 and Fe2O3 were grown by atomic layer deposition (ALD) at 400 °C. Metastable phases of ZrO2 were stabilized by Fe2O3 doping. The number of alternating ZrO2 and Fe2O3 deposition cycles were varied in order to achieve films with different cation ratios. The influence of annealing on the composition and structure of the thin films was investigated. Additionally, the influence of composition and structure on electrical and magnetic properties was studied. Several samples exhibited a measurable saturation magnetization and most of the samples exhibited a charge polarization. Both phenomena were observed in the sample with a Zr/Fe atomic ratio of 2.0. PMID:29441257

Stabilization and enhanced energy gap by Mg doping in ɛ-phase Ga2O3 thin films

NASA Astrophysics Data System (ADS)

Bi, Xiaoyu; Wu, Zhenping; Huang, Yuanqi; Tang, Weihua

2018-02-01

Mg-doped Ga2O3 thin films with different doping concentrations were deposited on sapphire substrates using laser molecular beam epitaxy (L-MBE) technique. X-ray diffraction (XRD), x-ray photoelectron spectroscopy (XPS) and ultraviolet-visible (UV-vis) absorption spectrum were used to characterize the crystal structure and optical properties of the as-grown films. Compared to pure Ga2O3 thin film, the Mg-doped thin films have transformed from the most stable β-phase into ɛ-phase. The absorption edge shifted to about 205 nm and the optical bandgap increased to ˜ 6 eV. These properties reveal that Mg-doped Ga2O3 films may have potential applications in the field of deep ultraviolet optoelectronic devices, such as deep ultraviolet photodetectors, short wavelength light emitting devices and so on.

Surface-area-controlled synthesis of porous TiO2 thin films for gas-sensing applications

NASA Astrophysics Data System (ADS)

Park, Jae Young; Kim, Ho-hyoung; Rana, Dolly; Jamwal, Deepika; Katoch, Akash

2017-03-01

Surface-area-controlled porous TiO2 thin films were prepared via a simple sol-gel chemical route, and their gas-sensing properties were thoroughly investigated in the presence of typical oxidizing NO2 gas. The surface area of TiO2 thin films was controlled by developing porous TiO2 networked by means of controlling the TiO2-to-TTIP (titanium isopropoxide, C12H28O4Ti) molar ratio, where TiO2 nanoparticles of size ˜20 nm were used. The sensor’s response was found to depend on the surface area of the TiO2 thin films. The porous TiO2 thin-film sensor with greater surface area was more sensitive than those of TiO2 thin films with lesser surface area. The improved sensing ability was ascribed to the porous network formed within the thin films by TiO2 sol. Our results show that surface area is a key parameter for obtaining superior gas-sensing performance; this provides important guidelines for preparing and using porous thin films for gas-sensing applications.

PEALD grown high-k ZrO{sub 2} thin films on SiC group IV compound semiconductor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khairnar, A. G., E-mail: agkhairnar@gmail.com; Patil, V. S.; Agrawal, K. S.

The study of ZrO{sub 2} thin films on SiC group IV compound semiconductor has been studied as a high mobility substrates. The ZrO{sub 2} thin films were deposited using the Plasma Enhanced Atomic Layer Deposition System. The thickness of the thin films were measured using ellipsometer and found to be 5.47 nm. The deposited ZrO{sub 2} thin films were post deposition annealed in rapid thermal annealing chamber at temperature of 400°Ð¡. The atomic force microscopy and X-гау photoelectron spectroscopy has been carried out to study the surface topography, roughness and chemical composition of thin film, respectively.

Anomalous bias-stress-induced unstable phenomena of InZnO thin-film transistors using Ta2O5 gate dielectric

NASA Astrophysics Data System (ADS)

Xu, Wangying; Dai, Mingzhi; Liang, Lingyan; Liu, Zhimin; Sun, Xilian; Wan, Qing; Cao, Hongtao

2012-05-01

InZnO thin-film transistors using high-κ Ta2O5 gate dielectric are presented and analysed. The large capacitance coupling effect of amorphous Ta2O5 results in fabricated devices with good electrical properties. However, an anomalous negative threshold voltage (Vth) shift under positive bias stress is observed. It is suggested that electron detrapping from the high-κ Ta2O5 dielectric to the gate electrode is responsible for this Vth shift, which is supported both by the logarithmical dependence of the Vth change on the duration of the bias stress and device simulation extracted trapped charges involved.

Lanthanum aluminum oxide thin-film dielectrics from aqueous solution.

PubMed

Plassmeyer, Paul N; Archila, Kevin; Wager, John F; Page, Catherine J

2015-01-28

Amorphous LaAlO3 dielectric thin films were fabricated via solution processing from inorganic nitrate precursors. Precursor solutions contained soluble oligomeric metal-hydroxyl and/or -oxo species as evidenced by dynamic light scattering (DLS) and Raman spectroscopy. Thin-film formation was characterized as a function of annealing temperature using Fourier transform infrared (FTIR), X-ray diffraction (XRD), X-ray reflectivity (XRR), scanning electron microscopy (SEM), and an array of electrical measurements. Annealing temperatures ≥500 °C result in thin films with low leakage-current densities (∼1 × 10(-8) A·cm(-2)) and dielectric constants ranging from 11.0 to 11.5. When incorporated as the gate dielectric layer in a-IGZO thin-film transistors (TFTs), LaAlO3 thin films annealed at 600 °C in air yielded TFTs with relatively low average mobilities (∼4.5 cm(2)·V(-1)·s(-1)) and high turn-on voltages (∼26 V). Interestingly, reannealing the LaAlO3 in 5%H2/95%N2 at 300 °C before deposition of a-IGZO channel layers resulted in TFTs with increased average mobilities (11.1 cm(2)·V(-1)·s(-1)) and lower turn-on voltages (∼6 V).

Interfacial characteristics and multiferroic properties of ion-doped BiFeO3/NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Guo, Meiyou; Tan, Guoqiang; Zheng, Yujuan; Liu, Wenlong; Ren, Huijun; Xia, Ao

2017-05-01

Multi-ion doped BiFeO3/NiFe2O4 bilayered thin films were successfully prepared on fluorine-doped SnO2/glass (SnO2:F) substrates by sol-gel method. The crystalline structure, leakage current, interfacial characteristics, and multiferroic properties were investigated in detail. The results of Rietveld refinement showed that the structure of BSrSFMC layer is transformed from rhombohedral to tetragonal structure by the means of ion-doping. The difference of leakage current density of the BSrSFMC/NiFe2O4 (NFO) bilayered films of the -40 V to 40 V and 40 V to -40 V are 0.32 × 10-5 and 1.13 × 10-5 A/cm2, respectively. It was observed that there are obvious interface effects between BSrSFMC and NFO layers, which will cause the accumulation of space charges and the establishment of built-in internal electric field (EI) at the interface. Therefore, different EI directions will affect the dipoles reversal and migration of carriers in the BSrSFMC layer, which will result in different values of transient current with the same applied voltage in the opposite directions. The larger coercive field (Ec ˜ 750 kV/cm) of BSrSFMC/NFO film indicated that there is a tensile stress at the interface between BSrSFMC and NFO layers, making the polarization difficult. These results showed that the above interesting phenomena of the J-V are closely related to the interface effects between the layer of BiFeO3 and NiFe2O4.

Dielectric and piezoelectric properties of lead-free (Bi,Na)TiO3-based thin films

NASA Astrophysics Data System (ADS)

Abazari, M.; Safari, A.; Bharadwaja, S. S. N.; Trolier-McKinstry, S.

2010-02-01

Dielectric and piezoelectric properties of morphotropic phase boundary (Bi,Na)TiO3-(Bi,K)TiO3-BaTiO3 epitaxial thin films deposited on SrRuO3 coated SrTiO3 substrates were reported. Thin films of 350 nm thickness exhibited small signal dielectric permittivity and loss tangent values of 750 and 0.15, respectively, at 1 kHz. Ferroelectric hysteresis measurements indicated a remanent polarization value of 30 μC/cm2 with a coercive field of 85-100 kV/cm. The thin film transverse piezoelectric coefficient (e31,f) of these films after poling at 600 kV/cm was found to be -2.2 C/m2. The results indicate that these BNT-based thin films are a potential candidate for lead-free piezoelectric devices.

Preparation and Characterization of Ferroelectric BaTi0.91(Hf0.5, Zr0.5)0.09O3 Thin Films by Sol-Gel Process Using Titanium and Zirconium Alkoxides

NASA Astrophysics Data System (ADS)

Thongrueng, Jirawat; Nishio, Keishi; Nagata, Kunihiro; Tsuchiya, Toshio

2000-09-01

Sol-gel-derived BaTi0.91(Hf0.5, Zr0.5)0.09O3 (BTHZ-9) thin films have been successfully prepared on Pt and Pt(111)/Ti/SiO2/Si(100) substrates by spin-coating and sintering from 550 to 900°C for 2 h in oxygen ambient. X-ray diffraction measurement indicated that the single perovskite phase of the BTHZ-9 thin films was obtained at heat treatment above 650°C. The formation temperature of the double-alkoxy-derived BTHZ-9 thin films was lower by at least 80°C than that of the films prepared from only titanium alkoxide. The microstructure of the films was observed by atomic force microscopy and scanning electron microscopy. The grain size of the films increased from 70 to 200 nm with increasing sintering temperature ranging from 650 to 850°C. The maximum peak for the dielectric constant, corresponding to the Curie point (87°C), was broad and lower in magnitude compared with that of the BTHZ-9 bulk ceramics. Tensile stresses resulting from the differences between thermal expansion coefficients of the substrate and the film caused poor electrical properties. BTHZ-9 thin films exhibited a well-saturated polarization-electric field hysteresis loop. The polarization and coercive field for the 850-nm-thick BTHZ-9 thin film prepared on Pt/Ti/SiO2/Si substrate at 750°C were determined to be 8 μC/cm2 and 15 kV/cm, respectively. Those of the BTHZ-9 thin film prepared on Pt substrate at 850°C were found to be 9 μC/cm2 and 18 kV/cm, respectively.

Formation of homologous In{sub 2}O{sub 3}(ZnO){sub m} thin films and its thermoelectric properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jia, Junjun; Nakamura, Shin-ichi; Shigesato, Yuzo, E-mail: yuzo@chem.aoyama.ac.jp

Homologous In{sub 2}O{sub 3}(ZnO){sub 5} thin films were produced on a synthetic quartz glass substrate by thermal annealing of magnetron sputtered In{sub 2}O{sub 3}-ZnO compound films. When the annealing temperature was increased to 700 °C, the sputtered In{sub 2}O{sub 3}-ZnO film with In{sub 2}O{sub 3} microcrystalline changed to a c-oriented homologous In{sub 2}O{sub 3}(ZnO){sub 5} structure, for which the crystallization is suggested to begin from the surface and proceed along with the film thickness. The annealing temperature of 700 °C to form the In{sub 2}O{sub 3}(ZnO){sub 5} structure was substantially lower than temperatures of conventional solid state synthesis from In{sub 2}O{sub 3}more » and ZnO powders, which is attributed to the rapid diffusional transport of In and Zn due to the mixing of In{sub 2}O{sub 3} and ZnO in the atomic level for sputtered In{sub 2}O{sub 3}-ZnO compound films. The homologous structure collapsed at temperatures above 900 °C, which is attributed to (1) zinc vaporization from the surface and (2) a gradual increase of zinc silicate phase at the interface. This c-oriented layer structure of homologous In{sub 2}O{sub 3}(ZnO){sub 5} thin films along the film thickness allowed the thin film to reach a power factor of 1.3 × 10{sup −4} W/m K{sup 2} at 670 °C, which is comparable with the reported maximum value for the textured In{sub 2}O{sub 3}(ZnO){sub 5} powder (about 1.6 × 10{sup −4} W/m K{sup 2} at 650 °C).« less

Electrical and structural properties of TiO2-δ thin film with oxygen vacancies prepared by RF magnetron sputtering using oxygen radical

NASA Astrophysics Data System (ADS)

Kawamura, Kinya; Suzuki, Naoya; Tsuchiya, Takashi; Shimazu, Yuichi; Minohara, Makoto; Kobayashi, Masaki; Horiba, Koji; Kumigashira, Hiroshi; Higuchi, Tohru

2016-06-01

Anatase TiO2-δ thin film was prepared by RF magnetron sputtering using oxygen radical and Ti-metal target. Degrees of the TiO2-δ crystal orientation in the thin film depends of the oxygen gas pressure (P\\text{O2}) in the radical gun. The (004)- and (112)-oriented TiO2-δ thin films crystallized without postannealing have the mixed valence Ti4+/Ti3+ state. The electrical conductivities, which corresponds to n-type oxide semiconductor, is higher in the case of (004)-oriented TiO2-δ thin film containing with high concentration of oxygen vacancy. The donor band of TiO2-δ thin film is observed at ˜1.0 eV from the Fermi level (E F). The density-of-state at E F is higher in (004)-oriented TiO2-δ thin film. The above results indicate that the oxygen vacancies can control by changing the P\\text{O2} of the oxygen radical.

Effect of temperature on optical properties of PMMA/SiO2 composite thin film

NASA Astrophysics Data System (ADS)

Soni, Gyanesh; Srivastava, Subodh; Soni, Purushottam; Kalotra, Pankaj; Vijay, Y. K.

2018-05-01

Effect of temperature on PMMA/SiO2 composites thin films were investigated. Nanocomposite flexible thin films of 60 µm thicknesses with different loading of SiO2 nanoparticles were prepared using solution casting method. SEM images show that SiO2 nanoparticles are distributed uniformly in PMMA matrix without any lumps on the surface, and PMMA/SiO2 nano composite thin films had a smoother and regular morphology. UV-Vis and optical band gap measurements revealed that both the concentration of SiO2 nanoparticles and temperature affect the optical properties of the composite thin film in comparison to the pure PMMA film.

Synthesis, characterization and application of Co doped TiO2 multilayer thin films

NASA Astrophysics Data System (ADS)

Khan, M. I.

2018-06-01

To use the visible portion of solar light, 2% cobalt doped TiO2 (Co: TiO2) multilayer thin films having 1, 2, 3 and 4 stacked layers have been deposited on FTO substrates using spray pyrolysis technique. XRD results show that 1 and 2 layers of films have anatase phase. Brookite phase has been appeared at the 3 and 4 layered films. The average grain size of 1, 2, 3 and 4 layers of films are 14.4, 23.5, 29.7 and 33.6 nm respectively. UV-Vis results show that 4th layer film has high absorption in the visible region. The calculated Eg of 1, 2, 3 and 4 layers is 3.54, 3.42, 3.30 and 3.03 eV respectively. The calculated average sheet resistivity of 1, 2, 3 and 4 layers of films is 7.68 × 104, 4.54 × 104, 8.85 × 103 and 7.95 × 102 (ohm-m) respectively, according to four point probe technique. Solar simulator results show that highest solar conversion efficiency (5.6%) has been obtained by using 3 stacked layers photoanode. This new structure in the form of stack layers provides a way to improve the efficiency of optoelectronic devices.

500 keV Ar2+ ion irradiation induced anatase to brookite phase transformation and ferromagnetism at room temperature in TiO2 thin films

NASA Astrophysics Data System (ADS)

Bharati, B.; Mishra, N. C.; Kanjilal, D.; Rath, Chandana

2018-01-01

In our earlier report, where we have demonstrated ferromagnetic behavior at room temperature (RT) in TiO2 thin films deposited through electron beam evaporation technique followed by annealing either in Ar or O2 atmosphere [Mohanty et al., Journal of Magnetism and Magnetic Materials 355 (2014) 240-245], here we have studied the evolution of structure and magnetic properties after irradiating the TiO2 thin films with 500 keV Ar2+ ions. The pristine film while exhibits anatase phase, the films become amorphous after irradiating at fluence in the range 1 × 1014 to 1 × 1016 ions/cm2. Increasing the fluence up to 5 × 1016 ions/cm2, amorphous to crystalline phase transformation occurs and the structure becomes brookite. Although anatase to rutile phase transformation is usually reported in literatures, anatase to brookite phase transformation is an unusual feature which we have reported here for the first time. Such anatase to brookite phase transformation is accompanied with grain growth without showing any change in film thickness evidenced from Rutherford's Back Scattering (RBS) measurement. From scanning probe micrographs (SPM), roughness is found to be more in amorphous films than in the crystalline ones. Anatase to brookite phase transformation could be realized by considering the importance of intermediate amorphous phase. Because due to amorphous phase, heat deposited by energetic ions are localized as dissipation of heat is less and as a result, the localized region crystallizes in brookite phase followed by grain growth as observed in highest fluence. Further, we have demonstrated ferromagnetic behavior at RT in irradiated films similar to pristine one, irrespective of their phase and crystallinity. Origin for room temperature ferromagnetism (RTFM) is attributed to the presence of oxygen vacancies which is confirmed by carrying out XPS measurement.

Tailoring and optimization of optical properties of CdO thin films for gas sensing applications

NASA Astrophysics Data System (ADS)

Rajput, Jeevitesh K.; Pathak, Trilok K.; Kumar, V.; Swart, H. C.; Purohit, L. P.

2018-04-01

Cadmium oxide (CdO) thin films have been deposited onto glass substrates using different molar concentrations (0.2 M, 0.5 M and 0.8 M) of cadmium acetate precursor solutions using a sol-gel spin coating technique. The structural, morphological, optical and electrical results are presented. X-ray diffraction patterns indicated that the CdO films of different molarity have a stable cubic structure with a (111) preferred orientation at low molar concentration. Scanning electron microscopy images revealed that the films adopted a rectangular to cauliflower like morphology. The optical transmittance of the thin films was observed in the range 200-800 nm and it was found that the 0.2 M CdO thin films showed about 83% transmission in the visible region. The optical band gap energy of the thin films was found to vary from 2.10 to 3.30 eV with the increase in molar concentration of the solution. The electrical resistance of the 0.5 M thin film was found to be 1.56 kΩ. The oxygen sensing response was observed between 20-33% in the low temperature range (32-200 °C).

Pulsed Laser Deposition Growth of Delafossite (CuFeO2) thin films and multilayers

NASA Astrophysics Data System (ADS)

Joshi, Toyanath; Ferrari, Piero; Borisov, Pavel; Cabrera, Alejandro; Lederman, David

2014-03-01

Owing to its narrow band gap (<2 eV) and p-type conductivity delafossite CuFeO2 is attractive for applications in the field of solar energy conversion. Obtaining pure phase CuFeO2 thin films, however, is relatively difficult. It is necessary to maintain the lowest possible Cu valency (+1) in order to avoid forming the comparably stable spinel compound CuFe2O4. We present a systematic study of the pulsed laser deposition (PLD) growth conditions for epitaxial (00.1) oriented CuFeO2 thin films on Al2O3 (00.1) substrates. The secondary impurity phase, CuFe2O4, was removed completely by optimizing the growth conditions. RHEED, XRD and TEM showed that the pure phase delafossite films are highly epitaxial to the substrate. The chemical purity was verified by Raman and XPS. The indirect bandgap of 1.15 eV was measured using infrared reflectivity, and is in agreement with the CuFeO2 bulk value. Finally, we discuss the growth and structural characterization of delafossite multilayers, CuFeO2/CuGaO2. This work was supported by a Research Challenge Grant from the West Virginia Higher Education Policy Commission (HEPC.dsr.12.29) and the Microelectronics Advanced Research Corporation (Contract # 2013-MA-2382) at WVU.

Thermoelectric effects of amorphous Ga-Sn-O thin film

NASA Astrophysics Data System (ADS)

Matsuda, Tokiyoshi; Uenuma, Mutsunori; Kimura, Mutsumi

2017-07-01

The thermoelectric effects of an amorphous Ga-Sn-O (a-GTO) thin film have been evaluated as a physical parameter of a novel oxide semiconductor. Currently, a-GTO thin films are greatly desired not only because they do not contain rare metals and are therefore free from problems on the exhaustion of resources and the increase in cost but also because their initial characteristics and performance stabilities are excellent when they are used in thin-film transistors. In this study, an a-GTO thin film was deposited on a quartz substrate by RF magnetron sputtering and postannealing was performed in air at 350 °C for 1 h using an annealing furnace. The Seebeck coefficient and electrical conductivity of the a-GTO thin film were -137 µV/K and 31.8 S/cm at room temperature, and -183 µV/K and 43.8 S/cm at 397 K, respectively, and as a result, the power factor was 1.47 µW/(cm·K2) at 397 K; these values were roughly as high as those of amorphous In-Ga-Zn-O (a-IGZO) thin films. Therefore, a-GTO thin films will be a candidate material for thermoelectric devices fabricated in a large area at a low cost by controlling the carrier mobility, carrier density, device structures, and so forth.

Enhanced magnetoelectric response in 2-2 bilayer 0.50Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3/NiFe2O4 thin films

NASA Astrophysics Data System (ADS)

Ade, Ramesh; Sambasiva, V.; Kolte, Jayant; Karthik, T.; Kulkarni, Ajit R.; Venkataramani, N.

2018-03-01

In this work, room temperature magnetoelectric (ME) properties of 0.50Pb(Ni1/3Nb2/3)O3-0.35PbTiO3-0.15PbZrO3 (PNNZT)/NiFe2O4 (NFO) 2-2 bilayer thin films grown on Pt/Ti/SiO2/Si substrate, using pulsed laser deposition technique, are reported. Structural studies confirm single phase PNNZT/NFO 2-2 bilayer structure formation. PNNZT/NFO 2-2 bilayer thin film shows a maximum ME voltage coefficient (α E ) of ~0.70 V cm-1. Oe-1 at a frequency of 1 kHz. The present study reveals that PNNZT/NFO bilayer thin film can be a potential candidate for technological applications.

Efficient high-resolution hard x-ray imaging with transparent Lu2O3:Eu scintillator thin films

NASA Astrophysics Data System (ADS)

Marton, Zsolt; Miller, Stuart R.; Brecher, Charles; Kenesei, Peter; Moore, Matthew D.; Woods, Russell; Almer, Jonathan D.; Miceli, Antonino; Nagarkar, Vivek V.

2015-09-01

We have developed microstructured Lu2O3:Eu scintillator films that provide spatial resolution on the order of micrometers for hard X-ray imaging. In addition to their outstanding resolution, Lu2O3:Eu films also exhibits both high absorption efficiency for 20 to 100 keV X-rays, and bright 610 nm emission whose intensity rivals that of the brightest known scintillators. At present, high spatial resolution of such a magnitude is achieved using ultra-thin scintillators measuring only about 1 to 5 μm in thickness, which limits absorption efficiency to ~3% for 12 keV X-rays and less than 0.1% for 20 to 100 keV X-rays; this results in excessive measurement time and exposure to the specimen. But the absorption efficiency of Lu2O3:Eu (99.9% @12 keV and 30% @ 70 keV) is much greater, significantly decreasing measurement time and radiation exposure. Our Lu2O3:Eu scintillator material, fabricated by our electron-beam physical vapor deposition (EB-PVD) process, combines superior density of 9.5 g/cm3, a microcolumnar structure for higher spatial resolution, and a bright emission (48000 photons/MeV) whose wavelength is an ideal match for the underlying CCD detector array. We grew thin films of this material on a variety of matching substrates, measuring some 5-10μm in thickness and covering areas up to 1 x 1 cm2, which can be a suitable basis for microtomography, digital radiography as well as CT and hard X-ray Micro-Tomography (XMT). The microstructure and optical transparency of such screens was optimized, and their imaging performance was evaluated in the Argonne National Laboratory's Advanced Photon Source. Spatial resolution and efficiency were also characterized.

Electrochemical Properties of RuO2 Electrodes as a Function of Thin Film Thickness

NASA Astrophysics Data System (ADS)

Li, Xiang; Xiong, Jian; Luo, Yuan; Luo, Yongmei

2018-01-01

A thin film RuO2 electrode was prepared by spin coating thermal decomposition methods. Precursor containing RuCl3·nH2O and isopropyl alcohol was coated on tantalum substrate and annealed at 250-260°C for 3 h to form a thin film RuO2 electrode of about 2.5 μm, 5.6 μm, 11.4 μm, and 14.5 μm in thickness. X-ray diffraction revealed that peak intensities of those electrodes were similar and close to each other. Scanning electron microscopy showed that thin film of 5.6 μm in thickness was dense and free of cracks. Electrochemical performances of electrodes were examined by cyclic voltammetry, galvanostatic charge/discharge as well as equivalent series resistance. The highest specific capacitance value of 725 F g-1 was registered for the electrode of 5.6 μm in thickness with good constant current charge/discharge and equivalent series resistance of 0.36 Ω as well as cyclic stability.

Nanocrystalline Pd:NiFe2O4 thin films: A selective ethanol gas sensor

NASA Astrophysics Data System (ADS)

Rao, Pratibha; Godbole, R. V.; Bhagwat, Sunita

2016-10-01

In this work, Pd:NiFe2O4 thin films were investigated for the detection of reducing gases. These films were fabricated using spray pyrolysis technique and characterized using X-ray diffraction (XRD) to confirm the crystal structure. The surface morphology was studied using scanning electron microscopy (SEM). Magnetization measurements were carried out using SQUID VSM, which shows ferrimagnetic behavior of the samples. These thin film sensors were tested against methanol, ethanol, hydrogen sulfide and liquid petroleum gas, where they were found to be more selective to ethanol. The fabricated thin film sensors exhibited linear response signal for all the gases with concentrations up to 5 w/o Pd. Reduction in optimum operating temperature and enhancement in response was also observed. Pd:NiFe2O4 thin films exhibited faster response and recovery characteristic. These sensors have potential for industrial applications because of their long-term stability, low power requirement and low production cost.

Ultrahigh broadband photoresponse of SnO2 nanoparticle thin film/SiO2/p-Si heterojunction.

PubMed

Ling, Cuicui; Guo, Tianchao; Lu, Wenbo; Xiong, Ya; Zhu, Lei; Xue, Qingzhong

2017-06-29

The SnO 2 /Si heterojunction possesses a large band offset and it is easy to control the transportation of carriers in the SnO 2 /Si heterojunction to realize high-response broadband detection. Therefore, we investigated the potential of the SnO 2 nanoparticle thin film/SiO 2 /p-Si heterojunction for photodetectors. It is demonstrated that this heterojunction shows a stable, repeatable and broadband photoresponse from 365 nm to 980 nm. Meanwhile, the responsivity of the device approaches a high value in the range of 0.285-0.355 A W -1 with the outstanding detectivity of ∼2.66 × 10 12 cm H 1/2 W -1 and excellent sensitivity of ∼1.8 × 10 6 cm 2 W -1 , and its response and recovery times are extremely short (<0.1 s). This performance makes the device stand out among previously reported oxide or oxide/Si based photodetectors. In fact, the photosensitivity and detectivity of this heterojunction are an order of magnitude higher than that of 2D material based heterojunctions such as (Bi 2 Te 3 )/Si and MoS 2 /graphene (photosensitivity of 7.5 × 10 5 cm 2 W -1 and detectivity of ∼2.5 × 10 11 cm H 1/2 W -1 ). The excellent device performance is attributed to the large Fermi energy difference between the SnO 2 nanoparticle thin film and Si, SnO 2 nanostructure, oxygen vacancy defects and thin SiO 2 layer. Consequently, practical highly-responsive broadband PDs may be actualized in the future.

Ultrafast atomic layer-by-layer oxygen vacancy-exchange diffusion in double-perovskite LnBaCo2O5.5+δ thin films.

PubMed

Bao, Shanyong; Ma, Chunrui; Chen, Garry; Xu, Xing; Enriquez, Erik; Chen, Chonglin; Zhang, Yamei; Bettis, Jerry L; Whangbo, Myung-Hwan; Dong, Chuang; Zhang, Qingyu

2014-04-22

Surface exchange and oxygen vacancy diffusion dynamics were studied in double-perovskites LnBaCo2O5.5+δ (LnBCO) single-crystalline thin films (Ln = Er, Pr; -0.5 < δ < 0.5) by carefully monitoring the resistance changes under a switching flow of oxidizing gas (O2) and reducing gas (H2) in the temperature range of 250 ~ 800 °C. A giant resistance change ΔR by three to four orders of magnitude in less than 0.1 s was found with a fast oscillation behavior in the resistance change rates in the ΔR vs. t plots, suggesting that the oxygen vacancy exchange diffusion with oxygen/hydrogen atoms in the LnBCO thin films is taking the layer by layer oxygen-vacancy-exchange mechanism. The first principles density functional theory calculations indicate that hydrogen atoms are present in LnBCO as bound to oxygen forming O-H bonds. This unprecedented oscillation phenomenon provides the first direct experimental evidence of the layer by layer oxygen vacancy exchange diffusion mechanism.

Spray pyrolysis synthesized Cu(In,Al)(S,Se)2 thin films solar cells

NASA Astrophysics Data System (ADS)

Aamir Hassan, Muhammad; Mujahid, Mohammad; Woei, Leow Shin; Wong, Lydia Helena

2018-03-01

Cu(In,Al)(S,Se)2 thin films are prepared by the Spray pyrolysis of aqueous precursor solutions of copper, indium, aluminium and sulphur sources. The bandgap of the films was engineered by aluminium (Al) doping in CISSe films deposited on molybdenum (Mo) coated glass substrate. The as-sprayed thin films were selenized at 500 °C for 10 min. Cadmium sulphide (CdS) buffer layer was deposited by chemical bath deposition process. Solar cell devices were fabricated with configuration of glass/Mo/CIASSe/CdS/i-ZnO/AZO. The solar cell device containing thin film of Cu(In,Al)(S,Se)2 with our optimized composition shows j-V characteristics of Voc = 0.47 V, jsc = 21.19 mA cm-2, FF = 52.88% and power conversion efficiency of 5.27%, under AM 1.5, 100 mW cm-2 illumination.

Structural and morphological study of ZrO2 thin films

NASA Astrophysics Data System (ADS)

Kumar, Davinder; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant Singh; Kaur, Raminder

2018-05-01

In this paper we discuss the fabrication of transparent thin films of Zirconium Oxide (ZrO2) deposited on glass substrates by sol-gel dip coating technique. Further these fabricated films were characterized for different annealing temperatures and withdrawal speed. X-ray diffraction is used to study the structural properties of deposited thin films and it reveals the change in crystallographic properties with the change in annealing temperature. Thickness of thin films is estimated by using scanning electron microscope.

Spin Seebeck effect in insulating epitaxial γ-Fe2O3 thin films

NASA Astrophysics Data System (ADS)

Jiménez-Cavero, P.; Lucas, I.; Anadón, A.; Ramos, R.; Niizeki, T.; Aguirre, M. H.; Algarabel, P. A.; Uchida, K.; Ibarra, M. R.; Saitoh, E.; Morellón, L.

2017-02-01

We report the fabrication of high crystal quality epitaxial thin films of maghemite (γ-Fe2O3), a classic ferrimagnetic insulating iron oxide. Spin Seebeck effect (SSE) measurements in γ-Fe2O3/Pt bilayers as a function of sample preparation conditions and temperature yield a SSE coefficient of 0.5(1) μV/K at room temperature. Dependence on temperature allows us to estimate the magnon diffusion length in maghemite to be in the range of tens of nanometers, in good agreement with that of conducting iron oxide magnetite (Fe3O4), establishing the relevance of spin currents of magnonic origin in magnetic iron oxides.

Investigation of phase transition properties of ZrO2 thin films

NASA Astrophysics Data System (ADS)

Kumar, Davinder; Singh, Avtar; Kaur, Manpreet; Rana, Vikrant Singh; Kaur, Raminder

2018-05-01

This paper presents the synthesis of transparent thin films of zirconium oxide (ZrO2) deposited on glass substrates by sol-gel dip coating technique. Synthesized films were characterized for different annealing time and withdrawal speed. Change in crystallographic properties of thin films was investigated by using X-ray diffraction. Surface morphology of transparent thin films was estimated by using scanning electron microscope.

Enhanced ultraviolet photo-response in Dy doped ZnO thin film

NASA Astrophysics Data System (ADS)

Kumar, Pawan; Singh, Ranveer; Pandey, Praveen C.

2018-02-01

In the present work, a Dy doped ZnO thin film deposited by the spin coating method has been studied for its potential application in a ZnO based UV detector. The investigations on the structural property and surface morphology of the thin film ensure that the prepared samples are crystalline and exhibit a hexagonal crystal structure of ZnO. A small change in crystallite size has been observed due to Dy doping in ZnO. AFM analysis ascertains the grain growth and smooth surface of the thin films. The Dy doped ZnO thin film exhibits a significant enhancement in UV region absorption as compared to the pure ZnO thin film, which suggests that Dy doped ZnO can be used as a UV detector. Under UV irradiation of wavelength 325 nm, the photocurrent value of Dy doped ZnO is 105.54 μA at 4.5 V, which is 31 times greater than that of the un-doped ZnO thin film (3.39 μA). The calculated value of responsivity is found to increase significantly due to the incorporation of Dy in the ZnO lattice. The observed higher value of photocurrent and responsivity could be attributed to the substitution of Dy in the ZnO lattice, which enhances the conductivity, electron mobility, and defects in ZnO and benefits the UV sensing property.

Interplay between current driven ferromagnetism in charge ordered antiferromagnetic Pr0.5Ca0.5MnO3 and superconducting YBa2Cu3O7-δ thin film multilayer

NASA Astrophysics Data System (ADS)

Baisnab, Dipak Kumar; Sardar, Manas; Amaladass, E. P.; Vaidhyanathan, L. S.; Baskaran, R.

2018-07-01

Thin film multilayer heterostructure of alternate YBa2Cu3O7-δ (YBCO) and Pr0.5Ca0.5MnO3 (PCMO) with thickness of each layer ∼60 nm has been deposited on (100) oriented SrTiO3 substrate by Pulsed Laser Deposition technique. A half portion of the base YBCO layer was masked in situ using mechanical shadow mask and in the remaining half portion, five alternate layers of PCMO and YBCO thin films were deposited. Magnetoresistance measurements were carried out under externally applied magnetic field and injection current. A noticeable damped oscillation of the superconducting transition temperature (TC) of this multilayer with respect to magnetic field is seen. Curiously, the field at which the first minimum in TC occurs, decreases as an injection current is driven perpendicular/parallel to the multilayers. Both these phenomena indicate that ferromagnetic correlation can be induced in antiferromagnetic PCMO thin films by (1) external magnetic field, or (2) injection current. While (1) is well researched, our study indicates that ferromagnetism can be induced by small amount of current in PCMO thin films. This unusual behavior points towards the strongly correlated nature of electrons in PCMO.

Critical current density of TlBa 2Ca 2Cu 3O 9 thin films on MgO (100) in magnetic fields

NASA Astrophysics Data System (ADS)

Piehler, A.; Ströbel, J. P.; Reschauer, N.; Löw, R.; Schönberger, R.; Renk, K. F.; Kraus, M.; Daniel, J.; Saemann-Ischenko, G.

1994-04-01

We report on the critical current density of TlBa 2Ca 2Cu 3O 9 thin films on (100) MgO substrates in magnetic fields. Single- phase and highly c-axis oriented thin films were prepared by laser ablation in combination with thermal evaporation of Tl 2O 3. Scanning electron microscope investigations indicated a flat plate-like microstructure and DC magnetization measurements showed the onset of superconductivity at ∼ 115 K. The critical current density jc was determined from magnetization cycles. Typical values of jc were 9 × 10 5 A/cm 2 at 6 K and 2.5 × 10 5 A/cm 2 at 77 K. In a magnetic field to 1 T applied parallel to the c-axis the critical current densities were 3 × 10 5 A/cm 2 at 6 K and 3 × 10 3 A/cm 2 at 77 K. The decrease of jc at higher magnetic fields is discussed and attributed to the microstructure of the TlBa 2Ca 2Cu 3O 9 thin films.

Fabrication of assembled ZnO/TiO2 heterojunction thin film transistors using solution processing technique

NASA Astrophysics Data System (ADS)

Liau, Leo Chau-Kuang; Lin, Yun-Guo

2015-01-01

Ceramic-based metal-oxide-semiconductor (MOS) field-effect thin film transistors (TFTs), which were assembled by ZnO and TiO2 heterojunction films coated using solution processing technique, were fabricated and characterized. The fabrication of the device began with the preparation of ZnO and TiO2 films by spin coating. The ZnO and TiO2 films that were stacked together and annealed at 450 °C were characterized as a p-n junction diode. Two types of the devices, p-channel and n-channel TFTs, were produced using different assemblies of ZnO and TiO2 films. Results show that the p-channel TFTs (p-TFTs) and n-channel TFTs (n-TFTs) using the assemblies of ZnO and TiO2 films were demonstrated by source-drain current vs. drain voltage (IDS-VDS) measurements. Several electronic properties of the p- and n- TFTs, such as threshold voltage (Vth), on-off ratio, channel mobility, and subthreshold swing (SS), were determined by current-voltage (I-V) data analysis. The ZnO/TiO2-based TFTs can be produced using solution processing technique and an assembly approach.

Influence of substrate temperature and post annealing of CuGaO{sub 2} thin films on optical and structural properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bakar, Muhammad Hafiz Abu; Li, Lam Mui; Salleh, Saafie

A transparent p-type thin film CuGaO{sub 2} was deposited by using RF sputtering deposition method on plastic (PET) and glass substrate. The characteristics of the film is investigated. The thin film was deposited at temperature range from 50-250°C and the pressure inside the chamber is 1.0×10{sup −2} Torr and Argon gas was used as a working gas. The RF power is set to 100 W. The thickness of thin film is 300nm. In this experiment the transparency of the thin film is more than 70% for the visible light region. The band gap obtain is between 3.3 to 3.5 eV. Themore » details of the results will be discussed in the conference.« less

Effect of rapid thermal annealing on nanocrystalline TiO2 thin films synthesized by swift heavy ion irradiation

NASA Astrophysics Data System (ADS)

Thakurdesai, Madhavi; Kanjilal, D.; Bhattacharyya, Varsha

2012-08-01

Irradiation by swift heavy ions (SHI) is unique tool to synthesize nanocrystalline thin films. We have reported transformation of 100 nm thick amorphous films into nanocrystalline film due to irradiation by 100 MeV Ag ion beam. Oblate shaped nanoparticles having anatase phase of TiO2 were formed on the surface of the irradiated films. In the present investigation, these films are annealed at 350 °C for 2 min in oxygen atmosphere by Rapid Thermal Annealing (RTA) method. During RTA processing, the temperature rises abruptly and this thermal instability is expected to alter surface morphology, structural and optical properties of nanocrystalline TiO2 thin films. Thus in the present work, effect of RTA on SHI induced nanocrystalline thin films of TiO2 is studied. The effect of RTA processing on the shape and size of TiO2 nanoparticles is studied by Atomic Force Microscopy (AFM) and Scanning Electron Microscopy (SEM). Glancing Angle X-ray Diffraction (GAXRD) studies are carried to investigate structural changes induced by RTA processing. Optical characterization is carried out by UV-vis spectroscopy and photoluminescence (PL) spectroscopy. The changes observed in structural and optical properties of nanocrystalline TiO2 thin films after RTA processing are attributed to the annihilation of SHI induced defects.

LiCoO2 and SnO2 Thin Film Electrodes for Lithium-Ion Battery Applications

NASA Technical Reports Server (NTRS)

Maranchi, Jeffrey P.; Hepp, Aloysius F.; Kumta, Prashant N.

2004-01-01

There is an increasing need for small dimension, ultra-lightweight, portable power supplies due to the miniaturization of consumer electronic devices. Rechargeable thin film lithium-ion batteries have the potential to fulfill the growing demands for micro-energy storage devices. However, rechargeable battery technology and fabrication processes have not kept paced with the advances made in device technology. Economical fabrication methods lending excellent microstructural and compositional control in the thin film battery electrodes have yet to be fully developed. In this study, spin coating has been used to demonstrate the flexibility of the approach to produce both anode (SnO2) and cathode (LiCoO2) thin films. Results on the microstructure crystal structure and electrochemical properties of the thin film electrodes are described and discussed.

Solution-derived SiO2 gate insulator formed by CO2 laser annealing for polycrystalline silicon thin-film transistors

NASA Astrophysics Data System (ADS)

Hishitani, Daisuke; Horita, Masahiro; Ishikawa, Yasuaki; Ikenoue, Hiroshi; Uraoka, Yukiharu

2017-05-01

The formation of perhydropolysilazane (PHPS)-based SiO2 films by CO2 laser annealing is proposed. Irradiation with a CO2 laser with optimum fluence transformed a prebaked PHPS film into a SiO2 film with uniform composition in the thickness direction. Polycrystalline silicon thin-film transistors (poly-Si TFTs) with a SiO2 film as the gate insulator were fabricated. When the SiO2 film was formed by CO2 laser annealing (CO2LA) at the optimum fluence of 20 mJ/cm2, the film had fewer OH groups which was one-twentieth that of the furnace annealed PHPS film and one-hundredth that of the SiO2 film deposited by plasma-enhanced chemical vapor deposition (PECVD) using tetraethyl orthosilicate (TEOS). The resulting TFTs using PHPS showed a clear transistor operation with a field-effect mobility of 37.9 ± 1.2 cm2 V-1 s-1, a threshold voltage of 9.8 ± 0.2 V, and a subthreshold swing of 0.76 ± 0.02 V/decade. The characteristics of such TFTs were as good as those of a poly-Si TFT with a SiO2 gate insulator prepared by PECVD using TEOS.

Influence of growth time on crystalline structure, morphologic and optical properties of In2O3 thin films

NASA Astrophysics Data System (ADS)

Attaf, A.; Bouhdjar, A.; Saidi, H.; Benkhetta, Y.; Bendjedidi, H.; Nouadji, M.; Lehraki, N.

2015-03-01

Indium oxide (In2O3) thin films are successfully deposited on glass substrate at different deposition timings by ultrasonic spray technique using Indium chloride (InCl3) material source witch is prepared with dissolvent Ethanol (C2H5-OH), the physical properties of these films are characterized by XRD, MEB,UV-visible. XRD analysis revealed that the films are polycrystalline in nature having centered cubic crystal structure and symmetry space group I213 with a preferred grain orientation along to (222) plane when the deposition time changes from 4 to 10 min but after t = 10 min, especially when t = 13 min we found that the majority of grains preferred the plane (400). The maximum value of grain size D = 61,51 nm is attained for In2O3 films grown at t =10 min. the average transmittance is about 72%, The optical gap energy is found to decrease from 3.8 to 3.66 eV with growth time Increased from 4 to 10 min but after t = 10 min the value of Eg will increase to 3.72 eV. A systematic study on the influence of growth time on the properties of In2O3 thin films deposited by ultrasonic spray at 400 °C has been reported.

Microstructure and optical properties of nanocrystalline Cu2O thin films prepared by electrodeposition.

PubMed

Jiang, Xishun; Zhang, Miao; Shi, Shiwei; He, Gang; Song, Xueping; Sun, Zhaoqi

2014-01-01

Cuprous oxide (Cu2O) thin films were prepared by using electrodeposition technique at different applied potentials (-0.1, -0.3, -0.5, -0.7, and -0.9 V) and were annealed in vacuum at a temperature of 100°C for 1 h. Microstructure and optical properties of these films have been investigated by X-ray diffractometer (XRD), field-emission scanning electron microscope (SEM), UV-visible (vis) spectrophotometer, and fluorescence spectrophotometer. The morphology of these films varies obviously at different applied potentials. Analyses from these characterizations have confirmed that these films are composed of regular, well-faceted, polyhedral crystallites. UV-vis absorption spectra measurements have shown apparent shift in optical band gap from 1.69 to 2.03 eV as the applied potential becomes more cathodic. The emission of FL spectra at 603 nm may be assigned as the near band-edge emission.

Biocompatible Nb2O5 thin films prepared by means of the sol-gel process.

PubMed

Velten, D; Eisenbarth, E; Schanne, N; Breme, J

2004-04-01

Thin biocompatible oxide films with an optimised composition and structure on the surface of titanium and its alloys can improve the implant integration. The preparation of these thin oxide layers with the intended improvement of the surface properties can be realised by means of the sol-gel process. Nb2O5 is a promising coating material for this application because of its extremely high corrosion resistance and thermodynamic stability. In this study, thin Nb2O5 layers ( < 200 nm) were prepared by spin coating of polished discs of cp-titanium with a sol consisting of a mixture of niobium ethoxide, butanol and acetylacetone. The thickness, phase composition, corrosion resistance and the wettability of the oxide layers were determined after an optimisation of the processing parameters for deposition of oxide without any organic impurities. The purity of the oxide layer is an important aspect in order to avoid a negative response to the cell adhesion. The biocompatibility of the oxide layers which was investigated by in vitro tests (morphology, proliferation rate, WST-1, cell spreading) is improved as compared to uncoated and TiO2 sol-gel coated cp-titanium concerning the spreading of cells, collagen I synthesis and wettability.

The effect of K and Na excess on the ferroelectric and piezoelectric properties of K0.5Na0.5NbO3 thin films

NASA Astrophysics Data System (ADS)

Ahn, C. W.; Y Lee, S.; Lee, H. J.; Ullah, A.; Bae, J. S.; Jeong, E. D.; Choi, J. S.; Park, B. H.; Kim, I. W.

2009-11-01

We have fabricated K0.5Na0.5NbO3 (KNN) thin films on Pt substrates by a chemical solution deposition method and investigated the effect of K and Na excess (0-30 mol%) on ferroelectric and piezoelectric properties of KNN thin film. It was found that with increasing K and Na excess in a precursor solution from 0 to 30 mol%, the leakage current and ferroelectric properties were strongly affected. KNN thin film synthesized by using 20 mol% K and Na excess precursor solution exhibited a low leakage current density and well saturated ferroelectric P-E hysteresis loops. Moreover, the optimized KNN thin film had good fatigue resistance and a piezoelectric constant of 40 pm V-1, which is comparable to that of polycrystalline PZT thin films.

Epitaxial Ferroelectric Ba(0.5)Sr(0.5)TiO3 Thin Films for Room-Temperature High-Frequency Tunable Element Applications

NASA Technical Reports Server (NTRS)

Chen, C. L.; Feng, H. H.; Zhang, Z.; Brazdeikis, A.; Miranda, F. A.; VanKeuls, F. W.; Romanofsky, R. R.; Huang, Z. J.; Liou, Y.; Chu, W. K.;

Cathode limited charge transport and performance of thin-film rechargeable lithium batteries

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bates, J.B.; Hart, F.X.; Lubben, D.

1994-11-01

Several types of thin-film rechargeable batteries based on lithium metal anodes and amorphous V{sub 2}O{sub 5} (aV{sub 2}O{sub 5}), LiMn{sub 2}O{sub 4}, and LiCoO{sub 2} cathodes have been investigated in this laboratory. In all cases, the current density of these cells is limited by lithium ion transport in the cathodes. This paper, discusses sources of this impedance in Li-aV{sub 2}O{sub 5} and Li-LiMn{sub 2}O{sub 4} thin-film cells and their effect on cell performance.

Temperature-independent ferroelectric property and characterization of high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films

NASA Astrophysics Data System (ADS)

Zhang, Linxing; Chen, Jun; Zhao, Hanqing; Fan, Longlong; Rong, Yangchun; Deng, Jinxia; Yu, Ranbo; Xing, Xianran

2013-08-01

Ferroelectric property stability against elevated temperature is significant for ferroelectric film applications, such as non-volatile ferroelectric random access memories. The high-TC 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films show the temperature-independent ferroelectric properties, which were fabricated on Pt(111)/Ti/SiO2/Si substrates via sol-gel method. The present thin films were well crystallized in a phase-pure perovskite structure with a high (100) orientation and uniform texture. A remanent polarization (2Pr) of 77 μC cm-2 and a local effective piezoelectric coefficient d33* of 60 pm/V were observed in the 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films. It is interesting to observe a behavior of temperature-independent ferroelectric property in the temperature range of room temperature to 125 °C. The remanent polarization, coercive field, and polarization at the maximum field are almost constant in the investigated temperature range. Furthermore, the dielectric loss and fatigue properties of 0.2Bi(Mg1/2Ti1/2)O3-0.8PbTiO3 thin films have been effectively improved by the Mn-doping.

Influence of discharge voltage on the sensitivity of the resultant sputtered NiO thin films toward hydrogen gas

NASA Astrophysics Data System (ADS)

Khalaf, Mohammed K.; Mutlak, Rajaa H.; Khudiar, Ausama I.; Hial, Qahtan G.

2017-06-01

Nickel oxide thin films were deposited on glass substrates as the main gas sensor for H2 by the DC sputtering technique at various discharge voltages within the range of 1.8-2.5 kV. Their structural, optical and gas sensing properties were investigated by XRD, AFM, SEM, ultraviolet visible spectroscopy and home-made gas sensing measurement units. A diffraction peak in the direction of NiO (200) was observed for the sputtered films, thereby indicating that these films were polycrystalline in nature. The optical band gap of the films decreased from 3.8 to 3.5 eV when the thickness of the films was increased from 83.5 to 164.4 nm in relation to an increase in the sputtering discharge voltage from 1.8 to 2.5 kV, respectively. The gas sensitivity performance of the NiO films that were formed was studied and the electrical responses of the NiO-based sensors toward different H2 concentrations were also considered. The sensitivity of the gas sensor increased with the working temperature and H2 gas concentration. The thickness of the NiO thin films was also an important parameter in determining the properties of the NiO films as H2 sensors. It was shown in this study that NiO films have the capability to detect H2 concentrations below 3% in wet air, a feature that allows this material to be used directly for the monitoring of the environment.

Photoconductivity in BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Basu, S. R.; Martin, L. W.; Chu, Y. H.; Gajek, M.; Ramesh, R.; Rai, R. C.; Xu, X.; Musfeldt, J. L.

2008-03-01

The optical properties of epitaxial BiFeO3 thin films have been characterized in the visible range. Variable temperature spectra show an absorption onset near 2.17eV, a direct gap (2.667±0.005eV at 300K), and charge transfer excitations at higher energy. Additionally, we report photoconductivity in BiFeO3 films under illumination from a 100mW /cm2 white light source. A direct correlation is observed between the magnitude of the photoconductivity and postgrowth cooling pressure. Dark conductivities increased by an order of magnitude when comparing films cooled in 760 and 0.1Torr. Large increases in photoconductivity are observed in light.

ZrO{sub 2}-ZnO composite thin films for humidity sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Velumani, M., E-mail: velumanimohan@gmail.com; Sivacoumar, R.; Alex, Z. C.

2016-05-23

ZrO{sub 2}-ZnO composite thin films were grown by reactive DC magnetron sputtering. X-ray diffraction studies reveal the composite nature of the films with separate ZnO and ZrO{sub 2} phase. Scanning electron microscopy studies confirm the nanocrystalline structure of the films. The films were studied for their impedometric relative humidity (RH) sensing characteristics. The complex impedance plot was fitted with a standard equivalent circuit consisting of an inter-granular resistance and a capacitance in parallel. The DC resistance was found to be decreasing with increase in RH.

Effects of Mev Si Ions and Thermal Annealing on Thermoelectric and Optical Properties of SiO2/SiO2+Ge Multi-nanolayer thin Films

NASA Astrophysics Data System (ADS)

Budak, S.; Alim, M. A.; Bhattacharjee, S.; Muntele, C.

Thermoelectric generator devices have been prepared from 200 alternating layers of SiO2/SiO2+Ge superlattice films using DC/RF magnetron sputtering. The 5 MeV Si ionsbombardmenthasbeen performed using the AAMU Pelletron ion beam accelerator to formquantum dots and / or quantum clusters in the multi-layer superlattice thin films to decrease the cross-plane thermal conductivity, increase the cross-plane Seebeck coefficient and increase the cross-plane electrical conductivity to increase the figure of merit, ZT. The fabricated devices have been annealed at the different temperatures to tailor the thermoelectric and optical properties of the superlattice thin film systems. While the temperature increased, the Seebeck coefficient continued to increase and reached the maximum value of -25 μV/K at the fluenceof 5x1013 ions/cm2. The decrease in resistivity has been seen between the fluence of 1x1013 ions/cm2 and 5x1013 ions/cm2. Transport properties like Hall coefficient, density and mobility did not change at all fluences. Impedance spectroscopy has been used to characterize the multi-junction thermoelectric devices. The loci obtained in the C*-plane for these data indicate non-Debye type relaxation displaying the presence of the depression parameter.

Growth and structure of Bi 0.5(Na 0.7K 0.2Li 0.1) 0.5TiO 3 thin films prepared by pulsed laser deposition technique

NASA Astrophysics Data System (ADS)

Lu, Lei; Xiao, Dingquan; Lin, Dunmin; Zhang, Yongbin; Zhu, Jianguo

2009-02-01

Bi 0.5(Na 0.7K 0.2Li 0.1) 0.5TiO 3 (BNKLT) thin films were prepared on Pt/Ti/SiO 2/Si substrates by pulsed laser deposition (PLD) technique. The films prepared were examined by using X-ray diffraction (XRD), scanning electron microscopy (SEM) and atomic force microscopy (AFM). The effects of the processing parameters, such as oxygen pressure, substrate temperature and laser power, on the crystal structure, surface morphology, roughness and deposition rates of the thin films were investigated. It was found that the substrate temperature of 600 °C and oxygen pressure of 30 Pa are the optimized technical parameters for the growth of textured film, and all the thin films prepared have granular structure, homogeneous grain size and smooth surfaces.

An enhancement of photoluminescence property of Ag doped La2O3 thin films at room temperature.

PubMed

Jbeli, R; Boukhachem, A; Ben Jemaa, I; Mahdhi, N; Saadallah, F; Elhouichet, H; Alleg, S; Amlouk, M; Ezzaouïa, H

2017-09-05

Metal transition doped oxide thin films or nanocomposites have recently emerged at the forefront of potentials research. With the focus mainly on efficiency, the aspect of stability against optical irradiation of such materials has so far not been thoroughly addressed. This work covers the synthesis of silver doped lanthanum oxide thin films (La 2 O 3 :Ag) which have been prepared by the spray pyrolysis technique on glass substrates at 460°C. Then, Ag thin films were grown on lanthanum oxide thin films by thermal evaporation. The present work aims to reach the synthesis of La 2 O 3 :Ag thin films using both the spray pyrolysis and thermal evaporation techniques. First, X-ray diffraction analysis shows that undoped and Ag doped films crystallize in a mixture of hexagonal and cubic phase with crystallites oriented along (001) direction. Raman spectroscopy shows the bands positions corresponding to hexagonal and cubic phases. On the other hand, an attempt regarding their optical properties has been carried out by means of photoluminescence measurements. Second, from electrical conductivity measurements, the activation energy decreases from 1.42 to 1.09eV with the increase of annealing time and the charge carriers are following the CBH model as dominant charge transport mechanism. Finally, the annealing time influences the surface wettability property and transforms La 2 O 3 character from hydrophobic (θ>90°) to hydrophilic (θ<90°). Copyright © 2017 Elsevier B.V. All rights reserved.

Thermoelectric properties of Bi 2Sr 2Co 2O y thin films and single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Diao, Zhenyu; Lee, Ho Nyung; Chisholm, Matthew F.

Bi 2Sr 2Co 2O 9 exhibits a misfit-layered structure with good thermoelectric properties. We have investigated the thermoelectric properties of Bi 2Sr 2Co 2O y in both thin-film and single-crystal forms. Among thin films grown at different temperatures, we find that both the in-plane thermoelectric power (Sab) and electrical resistivity (ρab) vary in an opposite trend, i.e., Sab is high when ρab is small. This results in large power factor (S ab 2/ρab~5.5 μW/K 2 cm for the film grown at 700 °C), comparable to that for whiskers. For single crystals, the electrical resistivity shows metallic behavior in a largemore » temperature range, but has higher magnitude than that of films grown at 675 °C and 700 °C. The annealing of single crystals under Ar atmosphere leads to even higher resistivity while S ab is improved. Lastly, we discuss the thermoelectric performance of this material considering both oxygen concentration and phase purity.« less

Thermoelectric properties of Bi 2Sr 2Co 2O y thin films and single crystals

DOE PAGES

Diao, Zhenyu; Lee, Ho Nyung; Chisholm, Matthew F.; ...

2017-02-02

Bi 2Sr 2Co 2O 9 exhibits a misfit-layered structure with good thermoelectric properties. We have investigated the thermoelectric properties of Bi 2Sr 2Co 2O y in both thin-film and single-crystal forms. Among thin films grown at different temperatures, we find that both the in-plane thermoelectric power (Sab) and electrical resistivity (ρab) vary in an opposite trend, i.e., Sab is high when ρab is small. This results in large power factor (S ab 2/ρab~5.5 μW/K 2 cm for the film grown at 700 °C), comparable to that for whiskers. For single crystals, the electrical resistivity shows metallic behavior in a largemore » temperature range, but has higher magnitude than that of films grown at 675 °C and 700 °C. The annealing of single crystals under Ar atmosphere leads to even higher resistivity while S ab is improved. Lastly, we discuss the thermoelectric performance of this material considering both oxygen concentration and phase purity.« less

Facile synthesis of layered V2O5/ZnV2O6 heterostructures with enhanced sensing performance

NASA Astrophysics Data System (ADS)

Xiao, Bingxin; Huang, Hao; Yu, Xiantong; Song, Jun; Qu, Junle

2018-07-01

A low-cost and environment-friendly hydrothermal approach was used for the synthesis of layered V2O5/ZnV2O6 hybrid nanobelts. Characterization results indicate that the V2O5/ZnV2O6 nanobelts are composed of several thin layers. Additionally, it is illustrated that the chemical formation process of V2O5/ZnV2O6 occurred in the solution. The synthesized V2O5/ZnV2O6 heterostructures were subjected to detailed ethanol sensing tests. Results demonstrate that V2O5/ZnV2O6 based sensor shows about 4.3 of response to 100 ppm of ethanol gases, reveals relatively high sensitivity at relatively low optimal operating temperature of 240 °C, as well as relatively good selectivity and stability. The performance of the sensor is better than most of reported vanadium based sensing devices. Thus this work offers a new insight into the rational regulation of vanadium based sensing devices.

Mixed Al and Si doping in ferroelectric HfO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lomenzo, Patrick D.; Nishida, Toshikazu, E-mail: nishida@ufl.edu; Takmeel, Qanit

2015-12-14

Ferroelectric HfO{sub 2} thin films 10 nm thick are simultaneously doped with Al and Si. The arrangement of the Al and Si dopant layers within the HfO{sub 2} greatly influences the resulting ferroelectric properties of the polycrystalline thin films. Optimizing the order of the Si and Al dopant layers led to a remanent polarization of ∼20 μC/cm{sup 2} and a coercive field strength of ∼1.2 MV/cm. Post-metallization anneal temperatures from 700 °C to 900 °C were used to crystallize the Al and Si doped HfO{sub 2} thin films. Grazing incidence x-ray diffraction detected differences in peak broadening between the mixed Al and Si doped HfO{submore » 2} thin films, indicating that strain may influence the formation of the ferroelectric phase with variations in the dopant layering. Endurance characteristics show that the mixed Al and Si doped HfO{sub 2} thin films exhibit a remanent polarization greater than 15 μC/cm{sup 2} up to 10{sup 8} cycles.« less

Experimental Study of Acid Treatment Toward Characterization of Structural, Optical, and Morphological Properties of TiO2-SnO2 Composite Thin Film

NASA Astrophysics Data System (ADS)

Fajar, M. N.; Hidayat, R.; Triwikantoro; Endarko

2018-04-01

The TiO2-SnO2 thin film with single and double-layer structure has successfully synthesized on FTO (Fluorine-doped Tin Oxide) substrate using the screen printing technique. The structural, optical, and morphological properties of the film were investigated by XRD, UV-Vis, and SEM, respectively. The results showed that the single and double-layer structure of TiO2-SnO2 thin film has mixed phase with a strong formation of casseritte phase. The acid treatment effect on TiO2-SnO2 thin film decreases the peak intensity of anatase phase formation and thin film’s absorbance values. The morphological study is also revealed that the single layer TiO2-SnO2 thin film had a more porous nature and decreased particle size distribution after acid treatment, while the double-layer TiO2-SnO2 thin film Eroded due to acid treatment.

Dye sensitized solar cell applications of CdTiO{sub 3}–TiO{sub 2} composite thin films deposited from single molecular complex

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ehsan, Muhammad Ali; Khaledi, Hamid; Pandikumar, Alagarsamy

2015-10-15

A heterobimetallic complex [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF (1) (TFA=trifluoroacetato, THF=tetrahydrofuran) comprising of Cd:Ti (1:2) ratio was synthesized by a chemical reaction of cadmium (II) acetate with titanium (IV) isopropoxide and triflouroacetic acid in THF. The stoichiometry of (1) was recognized by single crystal X-ray diffraction, spectroscopic and elemental analyses. Thermal studies revealed that (1) neatly decomposes at 450 °C to furnish 1:1 ratio of cadmium titanate:titania composite oxides material. The thin films of CdTiO{sub 3}–TiO{sub 2} composite oxides were deposited at 550 °C on fluorine doped tin oxide coated conducting glass substrate in air ambient. The micro-structure, crystallinity,more » phase identification and chemical composition of microspherical architectured CdTiO{sub 3}–TiO{sub 2} composite thin film have been determined by scanning electron microscopy, X-ray diffraction, Raman spectroscopy and energy dispersive X-ray analysis. The scope of composite thin film having band gap of 3.1 eV was explored as photoanode for dye-sensitized solar cell application. - Graphical abstarct: Microspherical designed CdTiO{sub 3}–TiO{sub 2} composite oxides photoanode film has been fabricated from single source precursor [Cd{sub 2}Ti{sub 4}(μ-O){sub 6}(TFA){sub 8}(THF){sub 6}]·1.5THF via aerosol assisted chemical vapor deposition technique for dye sensitized solar cell application. - Highlights: • Synthesis and characterization of a heterobimetallic Cd–Ti complex. • Fabrication of CdTiO{sub 3}–TiO{sub 2} thin film photoelectrode. • Application as dye sensitized photoanode for solar application.« less

Optical properties of Ag nanoclusters formed by irradiation and annealing of SiO2/SiO2:Ag thin films

NASA Astrophysics Data System (ADS)

Güner, S.; Budak, S.; Gibson, B.; Ila, D.

2014-08-01

We have deposited five periodic SiO2/SiO2 + Ag multi-nano-layered films on fused silica substrates using physical vapor deposition technique. The co-deposited SiO2:Ag layers were 2.7-5 nm and SiO2 buffer layers were 1-15 nm thick. Total thickness was between 30 and 105 nm. Different concentrations of Ag, ranging from 1.5 to 50 molecular% with respect to SiO2 were deposited to determine relevant rates of nanocluster formation and occurrence of interaction between nanoclusters. Using interferometry as well as in situ thickness monitoring, we measured the thickness of the layers. The concentration of Ag in SiO2 was measured with Rutherford Backscattering Spectrometry (RBS). To nucleate Ag nanoclusters, 5 MeV cross plane Si ion bombardments were performed with fluence varying between 5 × 1014 and 1 × 1016 ions/cm2 values. Optical absorption spectra were recorded in the range of 200-900 nm in order to monitor the Ag nanocluster formation in the thin films. Thermal annealing treatment at different temperatures was applied as second method to form varying size of nanoclusters. The physical properties of formed super lattice were criticized for thermoelectric applications.

Enhancement of electrical properties in polycrystalline BiFeO3 thin films

NASA Astrophysics Data System (ADS)

Yun, Kwi Young; Ricinschi, Dan; Kanashima, Takeshi; Okuyama, Masanori

2006-11-01

Ferroelectric BiFeO3 thin films were grown on Pt /TiO2/SiO2/Si substrates by pulsed-laser deposition. From the x-ray diffraction analysis, the BiFeO3 thin films consist of perovskite single phase, and the crystal structure shows the tetragonal structure with a space group P4mm. The BiFeO3 thin films show enhanced electrical properties with low leakage current density value of ˜10-4A /cm2 at a maximum applied voltage of 31V. This enhanced electrical resistivity allowed the authors to obtain giant ferroelectric polarization values such as saturation polarizations of 110 and 166μC/cm2 at room temperature and 80K, respectively.