GRID BLACKOUT IN VACUUM TUBES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hardin, K.D.

1961-06-01

A method which gives quantitative data is presented which allows for characterization of the grid blackout effect and is applicable to calculation of circuit degradation. Data are presented for several tube types which show developed bias and discharge time constants as a function of pulse input conditions. Blackout can seriously change the performance of any vacuum tube circuit which utilizes the tube in positive grid operation. The effects on CW oscillators and UHF mixers are discussed. An equivalent circuit which simulates some portions of the blackout phenomenon is presented and used to calculate effective capacitance and resistance associated with themore » grid surface. (auth)« less

Heat transfer in a liquid helium cooled vacuum tube following sudden vacuum loss

NASA Astrophysics Data System (ADS)

Dhuley, R. C.; Van Sciver, S. W.

2015-12-01

Condensation of nitrogen gas rapidly flowing into a liquid helium (LHe) cooled vacuum tube is studied. This study aims to examine the heat transfer in geometries such as the superconducting RF cavity string of a particle accelerator following a sudden loss of vacuum to atmosphere. In a simplified experiment, the flow is generated by quickly venting a large reservoir of nitrogen gas to a straight long vacuum tube immersed in LHe. Normal LHe (LHe I) and superfluid He II are used in separate experiments. The rate of condensation heat transfer is determined from the temperature of the tube measured at several locations along the gas flow. Instantaneous heat deposition rates in excess of 200 kW/m2 result from condensation of the flowing gas. The gas flow is then arrested in its path to pressurize the tube to atmosphere and estimate the heat transfer rate to LHe. A steady LHe I heat load of ≈25 kW/m2 is obtained in this scenario. Observations from the He II experiment are briefly discussed. An upper bound for the LHe I heat load is derived based on the thermodynamics of phase change of nitrogen.

Resonant Circuits and Introduction to Vacuum Tubes, Industrial Electronics 2: 9325.03. Course Outline.

ERIC Educational Resources Information Center

Dade County Public Schools, Miami, FL.

The 135 clock-hour course for the 11th year consists of outlines for blocks of instruction on series resonant circuits, parallel resonant circuits, transformer theory and application, vacuum tube fundamentals, diode vacuum tubes, triode tube construction and parameters, vacuum tube tetrodes and pentodes, beam-power and multisection tubes, and…

Flux tubes in the SU(3) vacuum

NASA Astrophysics Data System (ADS)

Cardaci, M. S.; Cea, P.; Cosmai, L.; Falcone, R.; Papa, A.

We analyze the distribution of the chromoelectric field generated by a static quark-antiquark pair in the SU(3) vacuum. We find that the transverse profile of the flux tube resembles the dual version of the Abrikosov vortex field distribution and give an estimate of the London penetration length in the confined vacuum.

Carbon nanotube vacuum gauges utilizing long, dissipative tubes

NASA Astrophysics Data System (ADS)

Kaul, Anupama B.; Manohara, Harish M.

2008-04-01

A carbon nanotube-based thermal conductivity vacuum gauge is described which utilizes 5-10 μm long diffusively contacted SWNTs for vacuum sensing. By etching the thermal SiO II beneath the tubes and minimizing heat conduction through the substrate, pressure sensitivity was extended toward higher vacuums. The pressure response of unannealed and annealed devices was compared to that of released devices. The released devices showed sensitivity to pressure as low as 1 x 10 -6 Torr. The sensitivity increased more dramatically with power for the released device compared to that of the unreleased device. Low temperature electronic transport measurements of the tubes were suggestive of a thermally activated hopping mechanism where the activation energy for hopping was calculated to be ~ 39 meV.

Low vacuum and discard tubes reduce hemolysis in samples drawn from intravenous catheters.

PubMed

Heiligers-Duckers, Connie; Peters, Nathalie A L R; van Dijck, Jose J P; Hoeijmakers, Jan M J; Janssen, Marcel J W

2013-08-01

In-vitro hemolysis is a great challenge to emergency departments where blood is drawn from intravenous catheters (IVCs). Although high quality samples can be obtained by straight needle venipuncture, IVCs are preferred for various reasons. The aim of this study was to identify blood collection practices that reduce hemolysis while using IVC. The study was conducted at an emergency department where blood is drawn in ≥ 90% of patients from IVC. Hemolysis, measured spectrophotometrically, was compared between syringe and vacuum tubes. The following practices were tested in combination with vacuum collection; a Luer-slip adapter, a Luer-lock adapter, discard tubes and low vacuum tubes. Each intervention lasted 1 week and retrieved 154 to 297 samples. As reference, hemolysis was also measured in vacuum tubes retrieved from departments where only straight needle venipuncture is performed. Vacuum collection led to more hemolytic samples compared with syringe tubes (24% versus 16% respectively, p=0.008). No difference in hemolysis was observed between the Luer-slip and the Luer-lock adapter. The use of discard (17% hemolytic, p=0.045) and low vacuum tubes (12% hemolytic, p<0.001) substantially decreased hemolysis. None of the interventions reduced the hemolysis rate to the level observed when drawing blood by straight needle venipuncture (3%, p<0.02). In summary, both discard and low vacuum tubes reduce hemolysis while drawing blood from IVC. Of these practices the use of a low vacuum tube is preferred considering the less volume of blood and the amount of tubes drawn. Copyright © 2013 The Canadian Society of Clinical Chemists. Published by Elsevier Inc. All rights reserved.

Preanalytical management: serum vacuum tubes validation for routine clinical chemistry.

PubMed

Lima-Oliveira, Gabriel; Lippi, Giuseppe; Salvagno, Gian Luca; Montagnana, Martina; Picheth, Geraldo; Guidi, Gian Cesare

2012-01-01

The validation process is essential in accredited clinical laboratories. Aim of this study was to validate five kinds of serum vacuum tubes for routine clinical chemistry laboratory testing. Blood specimens from 100 volunteers in five different serum vacuum tubes (Tube I: VACUETTE, Tube II: LABOR IMPORT, Tube III: S-Monovette, Tube IV: SST and Tube V: SST II) were collected by a single, expert phlebotomist. The routine clinical chemistry tests were analyzed on cobas 6000 module. The significance of the differences between samples was assessed by paired Student's t-test after checking for normality. The level of statistical significance was set at P < 0.005. Finally, the biases from Tube I, Tube II, Tube III, Tube IV and Tube V were compared with the current desirable quality specifications for bias (B), derived from biological variation. Basically, our validation will permit the laboratory or hospital managers to select the brand's vacuum tubes validated according him/her technical or economical reasons, in order to perform the following laboratory tests: glucose, total cholesterol, high density lipoprotein-cholesterol, triglycerides, total protein, albumin, blood urea nitrogen, uric acid, alkaline phosphatise, aspartate aminotransferase, gamma-glutamyltransferase, lactate dehydrogenase, creatine kinase, total bilirubin, direct bilirubin, calcium, iron, sodium and potassium. On the contrary special attention will be required if the laboratory already performs creatinine, amylase, phosphate and magnesium determinations and the quality laboratory manager intend to change the serum tubes. We suggest that laboratory management should both standardize the procedures and frequently evaluate the quality of in vitro diagnostic devices.

Preanalytical management: serum vacuum tubes validation for routine clinical chemistry

PubMed Central

Lima-Oliveira, Gabriel; Lippi, Giuseppe; Salvagno, Gian Luca; Montagnana, Martina; Picheth, Geraldo; Guidi, Gian Cesare

2012-01-01

Introduction The validation process is essential in accredited clinical laboratories. Aim of this study was to validate five kinds of serum vacuum tubes for routine clinical chemistry laboratory testing. Materials and methods: Blood specimens from 100 volunteers in five diff erent serum vacuum tubes (Tube I: VACUETTE®, Tube II: LABOR IMPORT®, Tube III: S-Monovette®, Tube IV: SST® and Tube V: SST II®) were collected by a single, expert phlebotomist. The routine clinical chemistry tests were analyzed on cobas® 6000 module. The significance of the diff erences between samples was assessed by paired Student’s t-test after checking for normality. The level of statistical significance was set at P < 0.005. Finally, the biases from Tube I, Tube II, Tube III, Tube IV and Tube V were compared with the current desirable quality specifications for bias (B), derived from biological variation. Results and conclusions: Basically, our validation will permit the laboratory or hospital managers to select the brand’s vacuum tubes validated according him/her technical or economical reasons, in order to perform the following laboratory tests: glucose, total cholesterol, high density lipoprotein-cholesterol, triglycerides, total protein, albumin, blood urea nitrogen, uric acid, alkaline phosphatise, aspartate aminotransferase, gamma-glutamyltransferase, lactate dehydrogenase, creatine kinase, total bilirubin, direct bilirubin, calcium, iron, sodium and potassium. On the contrary special attention will be required if the laboratory already performs creatinine, amylase, phosphate and magnesium determinations and the quality laboratory manager intend to change the serum tubes. We suggest that laboratory management should both standardize the procedures and frequently evaluate the quality of in vitro diagnostic devices. PMID:22838184

Research on temperature control and influence of the vacuum tubes with inserted tubes solar heater

NASA Astrophysics Data System (ADS)

Xiao, L. X.; He, Y. T.; Hua, J. Q.

2017-11-01

A novel snake-shape vacuum tube with inserted tubes solar collector is designed in this paper, the heat transfer characteristics of the collector are analyzed according to its structural characteristics, and the influence of different working temperature on thermal characteristics of the collector is studied. The solar water heater prototype consisting of 14 vacuum tubes with inserted tubes is prepared, and the hot water storage control subsystem is designed by hysteresis comparison algorithm. The heat characteristic of the prototype was experimentally studied under hot water output temperature of 40-45°C, 50-55°C and 60-65°C. The daily thermal efficiency was 64%, 50% and 46%, respectively. The experimental results are basically consistent with the theoretical analysis.

Generation of nanosecond neutron pulses in vacuum accelerating tubes

NASA Astrophysics Data System (ADS)

Didenko, A. N.; Shikanov, A. E.; Rashchikov, V. I.; Ryzhkov, V. I.; Shatokhin, V. L.

2014-06-01

The generation of neutron pulses with a duration of 1-100 ns using small vacuum accelerating tubes is considered. Two physical models of acceleration of short deuteron bunches in pulse neutron generators are described. The dependences of an instantaneous neutron flux in accelerating tubes on the parameters of pulse neutron generators are obtained using computer simulation. The results of experimental investigation of short-pulse neutron generators based on the accelerating tube with a vacuum-arc deuteron source, connected in the circuit with a discharge peaker, and an accelerating tube with a laser deuteron source, connected according to the Arkad'ev-Marx circuit, are given. In the experiments, the neutron yield per pulse reached 107 for a pulse duration of 10-100 ns. The resultant experimental data are in satisfactory agreement with the results of computer simulation.

Fine-needle aspiration by vacuum tubes.

PubMed

Holmquist, N D

1989-07-01

Fine-needle aspiration of subcutaneous masses, accepted in many parts of Europe and the Americas as a routine diagnostic technique, employs a syringe holder to facilitate the creation of a vacuum to withdraw cells. This investigation demonstrates that a vacuum tube used in venipuncture can be used to supply the negative pressure to suck cells into the needle. This apparatus is more readily available than a syringe holder in hospitals and clinics, and particularly provides the operator with a more dexterous approach to the mass because the fingers holding the needle can be much closer to the mass being immobilized by the other hand.

A vacuum-sealed miniature X-ray tube based on carbon nanotube field emitters

NASA Astrophysics Data System (ADS)

Heo, Sung Hwan; Kim, Hyun Jin; Ha, Jun Mok; Cho, Sung Oh

2012-05-01

A vacuum-sealed miniature X-ray tube based on a carbon nanotube field-emission electron source has been demonstrated. The diameter of the X-ray tube is 10 mm; the total length of the tube is 50 mm, and no external vacuum pump is required for the operation. The maximum tube voltage reaches up to 70 kV, and the X-ray tube generates intense X-rays with the air kerma strength of 108 Gy·cm2 min-1. In addition, X-rays produced from the miniature X-ray tube have a comparatively uniform spatial dose distribution.

Study of Performance of Coaxial Vacuum Tube Solar Collector on Ethanol Distillation Process

NASA Astrophysics Data System (ADS)

Sutomo; Ramelan, A. H.; Mustafa; Tristono, T.

2017-07-01

Coaxial vacuum tube solar collectors can generate heat up to 80°C is possibly used for ethanol distillation process that required temperature 79°C only. This study reviews the performance of coaxial collector vacuum tube used for ethanol distillation process. This experimental research was conducted in a closed space using a halogen lamp as a solar radiation simulator. We had done on three different of the radiation values, i.e. 998 W/m2, 878 W/m2 and 782 W/m2. The pressure levels of vacuum tube collector cavity in the research were 1; 0.5; 0.31; 0.179; and 0.043 atmospheres. The Research upgraded the 30% of ethanol to produce the concentration of 77% after distillation. The result shows that the performance of coaxial collector vacuum tube used for ethanol distillation process has the negative correlation to the level of the collector tube cavity pressure. The productivity will increase while the collector tube cavity pressure decreased. Therefore, the collector efficiency has the negative correlation also to the level of collector tube cavity pressure. The best performance achieved when it operated at a pressure of 0.043 atmosphere with radiation intensity 878 W / m2, and the value of efficiency is 57.8%.

On thermionic emission and the use of vacuum tubes in the advanced physics laboratory

NASA Astrophysics Data System (ADS)

Angiolillo, Paul J.

2009-12-01

Two methods are outlined for measuring the charge-to-mass ratio e /me of the electron using thermionic emission as exploited in vacuum tube technology. One method employs the notion of the space charge in the vacuum tube diode as described by the Child-Langmuir equation; the other method uses the electron trajectories in vacuum tube pentodes with cylindrical electrodes under conditions of orthogonally related electric and magnetic fields (the Hull magnetron method). The vacuum diode method gave e /me=1.782±0.166×10+11 C/kg (averaged over the vacuum diodes studied), and the Hull magnetron method gave e /me=1.779±0.208×10+11 C/kg (averaged over both pentodes and the anode voltages studied). These methods afford opportunities for students to determine the e /me ratio without using the Bainbridge tube method and to become familiar with phenomena not normally covered in a typical experimental methods curriculum.

Cold cathode vacuum discharge tube

DOEpatents

Boettcher, Gordon E.

1998-01-01

A cold cathode vacuum discharge tube, and method for making same, with an interior surface of the trigger probe coated with carbon deposited by carbon vapor deposition (CVD) or diamond-like carbon (DLC) deposition. Preferably a solid graphite insert is employed in the probe-cathode structure in place of an aluminum bushing employed in the prior art. The CVD or DLC probe face is laser scribed to allow resistance trimming to match available trigger voltage signals and to reduce electrical aging.

Noninvasive vacuum integrity tests on fast warm-up traveling-wave tubes

NASA Astrophysics Data System (ADS)

Dallos, A.; Carignan, R. G.

1989-04-01

A method of tube vacuum monitoring that uses the tube's existing internal electrodes as an ion gage is discussed. This method has been refined using present-day instrumentation and has proved to be a precise, simple, and fast method of tube vacuum measurement. The method is noninvasive due to operation of the cathode at low temperature, which minimizes pumping or outgassing. Because of the low current levels to be measured, anode insulator leakage must be low, and the leads must be properly shielded to minimize charging effects. A description of the method, instrumentation used, limitations, and data showing results over a period of 600 days are presented.

Evolution of gettering technologies for vacuum tubes to getters for MEMS

NASA Astrophysics Data System (ADS)

Amiotti, M.

2008-05-01

Getter materials are technically proven and industrially accepted practical ways to maintain vacuum inside hermetically sealed tubes or devices to assure high reliability and long lifetime of the operating devices. The most industrially proven vacuum tube is the cathode rays tubes (CRTs), where large surfaces are available for the deposition of an evaporated barium film by a radio frequency inductive heating of a stainless steel container filled with a BaAl4 powder mixed to Ni powder. The evolution of the CRTs manufacturing technologies required also new types of barium getters able to withstand some thermal process in air without any deterioration of the evaporation characteristics. In other vacuum tubes such as traveling waves tubes, the space available for the evaporation of a barium film and the sorption capacity required to assure the vacuum for the lifetime of the devices did not allow the use of the barium film, prompting the development of sintered non evaporable getter pills that can be activated during the manufacturing process or by flowing current through an embedded resistance. The same sintered non evaporable getter pills could find usage also in evacuated parts to thermally isolate the infrared sensors for different final applications. In high energy physics particle accelerators, the getter technology moved from localized vacuum getter pumps or getter strips to a getter coating over the surface of vacuum chambers in order to guarantee a more uniform pumping speed. With the advent of solid state electronics, new challenges faced the getter technology to assure long life to vacuum or inert gas filled hermetical packages containing microelectronic devices, especially in the telecommunication and military applications. A well known problem of GaAs devices with Pd or Pt metalization is the H2 poisoning of the metal gate: to prevent this degradation a two layer getter film has been develop to absorb a large quantity of H2 per unit of getter surface. The

Comparison of blood specimens from plain and gel vacuum blood collection tubes.

PubMed

Wiwanitkit, V

2001-05-01

This study was set in the Division of Laboratory Medicine, Chulalongkorn Hospital. All 2,000 blood specimens were randomly collected using evacuated blood collection by plain or gel vacuum tubes. After collection, each specimen was considered and judged using criteria of specimen rejection to determine how proper the specimen presentations were. All data were reviewed, collected and interpreted. It revealed that there were only 20 (1%) improper specimens and all were improper in quality. There was no significant difference between the ratio of improper specimens in both groups (P > 0.30). From this study, it revealed that efficacy of both types of vacuum tubes was not different. The new gel vacuum tube seems to be an effective tool in the evacuated blood collection system due to its advantage in reduction of time in specimen processing.

Cold cathode vacuum discharge tube

DOEpatents

Boettcher, G.E.

1998-03-10

A cold cathode vacuum discharge tube, and method for making same, are disclosed with an interior surface of the trigger probe coated with carbon deposited by carbon vapor deposition (CVD) or diamond-like carbon (DLC) deposition. Preferably a solid graphite insert is employed in the probe-cathode structure in place of an aluminum bushing employed in the prior art. The CVD or DLC probe face is laser scribed to allow resistance trimming to match available trigger voltage signals and to reduce electrical aging. 15 figs.

Cold cathode vacuum discharge tube

DOEpatents

Boettcher, G.E.

1998-04-14

A cold cathode vacuum discharge tube, and method for making same, with an interior surface of the trigger probe coated with carbon deposited by chemical vapor deposition (CVD) or diamond-like carbon (DLC) deposition are disclosed. Preferably a solid graphite insert is employed in the probe-cathode structure in place of an aluminum bushing employed in the prior art. The CVD or DLC probe face is laser scribed to allow resistance trimming to match available trigger voltage signals and to reduce electrical aging. 14 figs.

Use of vacuum tubes in test instrumentation for measuring characteristics of fast high-voltage semiconductor devices

NASA Technical Reports Server (NTRS)

Berning, D.

1981-01-01

Circuits are described that permit measurement of fast events occurring in power semiconductors. These circuits were developed for the dynamic characterization of transistors used in inductive-load switching applications. Fast voltage clamping using vacuum diodes is discussed, and reference is made to a unique circuit that was built for performing nondestructive, reverse-bias, second-breakdown tests on transistors.

Vacuum field-effect transistor with a deep submicron channel fabricated by electro-forming

NASA Astrophysics Data System (ADS)

Wang, Xiao; Shen, Zhihua; Wu, Shengli; Zhang, Jintao

2017-06-01

Vacuum field-effect transistors (VFETs) with channel lengths down to 500 nm (i.e., the deep submicron scale) were fabricated with the mature technology of the surface conduction electron emitter fabrication process in our former experiments. The vacuum channel of this new VFET was generated by using the electro-forming process. During electro-forming, the joule heat cracks the conductive film and then generates the submicron scale gap that serves as the vacuum channel. The gap separates the conductive film into two plane-to-plane electrodes, which serve as a source (cathode) electrode and a drain (anode) electrode of the VFET, respectively. Experimental results reveal that the fabricated device demonstrates a clear triode behavior of the gate modulation. Fowler-Nordheim theory was used to analyze the electron emission mechanism and operating principle of the device.

Ultralight Fabric Reflux Tube (UFRT) Thermal/Vacuum Test

NASA Technical Reports Server (NTRS)

Hurlbert, K. M.; Ewert, M. K.; Graf, J. P.; Keller, J. R.; Pauley, K. A.; Guenther, R. J.; Antoniak, Z. I.

1996-01-01

Spacecraft thermal control systems are essential to provide the necessary environment for the crew and equipment to function adequately on space missions. The Ultralight Fabric Reflux Tube (UFRT) was developed by Pacific Northwest Laboratory (PNL) as a lightweight radiator concept to be used on planetary-type missions (e.g., Moon, Mars). The UFRT consists of a thin-walled tube (acting as the fluid boundary), overwrapped with a low-mass ceramic fabric (acting as the primary pressure boundary). The tubes are placed in an array in the vertical position with the evaporators at the lower end. Heat is added to the evaporators, which vaporizes the working fluid. The vapor travels to the condenser end above and cools as heat is radiated to the environment. The fluid condensed on the tube wall is then returned to the evaporator by gravity. The primary objectives for the fiscal year 1994 program included the design and fabrication of prototype UFRTs and thermal/vacuum chamber testing of these test articles. Six UFRTS, with improved titanium liners, were successfully manufactured and provided to the Johnson Space Center in July 1994. Five were tested in a thermal/vacuum chamber in September 1994. Data obtained to characterize the performance of the UFRTs under simulated lunar conditions demonstrated the design concept successfully. In addition, a trade study showed that an optimized/improved UFRT could achieve as much as a 25% mass savings in the heat rejection subsystem of future planetary-type thermal control systems.

A vacuum-sealed compact x-ray tube based on focused carbon nanotube field-emission electrons

NASA Astrophysics Data System (ADS)

Jeong, Jin-Woo; Kim, Jae-Woo; Kang, Jun-Tae; Choi, Sungyoul; Ahn, Seungjoon; Song, Yoon-Ho

2013-03-01

We report on a fully vacuum-sealed compact x-ray tube based on focused carbon nanotube (CNT) field-emission electrons for various radiography applications. The specially designed two-step brazing process enabled us to accomplish a good vacuum level for the stable and reliable operation of the x-ray tube without any active vacuum pump. Also, the integrated focusing electrodes in the field-emission electron gun focused electron beams from the CNT emitters onto the anode target effectively, giving a small focal spot of around 0.3 mm with a large current of above 50 mA. The active-current control through the cathode electrode of the x-ray tube led a fast digital modulation of x-ray dose with a low voltage of below 5 V. The fabricated compact x-ray tube showed a stable and reliable operation, indicating good maintenance of a vacuum level of below 5 × 10-6 Torr and the possibility of field-emission x-ray tubes in a stand-alone device without an active pumping system.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-06-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

Performance characteristics of nanocrystalline diamond vacuum field emission transistor array

NASA Astrophysics Data System (ADS)

Hsu, S. H.; Kang, W. P.; Davidson, J. L.; Huang, J. H.; Kerns, D. V.

2012-05-01

Nitrogen-incorporated nanocrystalline diamond (ND) vacuum field emission transistor (VFET) with self-aligned gate is fabricated by mold transfer microfabrication technique in conjunction with chemical vapor deposition (CVD) of nanocrystalline diamond on emitter cavity patterned on silicon-on-insulator (SOI) substrate. The fabricated ND-VFET demonstrates gate-controlled emission current with good signal amplification characteristics. The dc characteristics of the ND-VFET show well-defined cutoff, linear, and saturation regions with low gate turn-on voltage, high anode current, negligible gate intercepted current, and large dc voltage gain. The ac performance of the ND-VFET is measured, and the experimental data are analyzed using a modified small signal circuit model. The experimental results obtained for the ac voltage gain are found to agree with the theoretical model. A higher ac voltage gain is attainable by using a better test setup to eliminate the associated parasitic capacitances. The paper reveals the amplifier characteristics of the ND-VFET for potential applications in vacuum microelectronics.

An assessment of the hardness of miniature vacuum tubes to high-voltage transients

DOE Office of Scientific and Technical Information (OSTI.GOV)

Orvis, W.J.

1990-03-01

Miniature vacuum tubes are vacuum switching and control devices fabricated on a silicon wafer, using the same technology as is used to make integrated circuits. They operate in much the same manner as conventional vacuum tubes, but with two important differences: they are micron sized devices, and they employ field emission instead of thermionic emission as the electron source. As these devices have a vacuum as their active region, they will be extremely hard to nuclear radiation and relatively insensitive to temperature effects, they are also expected to be extremely fast devices. We have estimated here that their hardness tomore » high-voltage transients will be at least as good as existing semiconductor devices and possibly better. 5 figs.« less

Numerical research of the swirling supersonic gas flows in the self-vacuuming vortex tube

NASA Astrophysics Data System (ADS)

Volov, V. T.; Lyaskin, A. S.

2018-03-01

This article presents the results of simulation for a special type of vortex tubes – self-vacuuming vortex tube (SVVT), for which extreme values of temperature separation and vacuum are realized. The main results of this study are the flow structure in the SVVT and energy loss estimations on oblique shock waves, gas friction, instant expansion and organization of vortex bundles in SVVT.

Telephone equipment room, showing channel terminal bank with vacuum tubes. ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Telephone equipment room, showing channel terminal bank with vacuum tubes. View to east - March Air Force Base, Strategic Air Command, Combat Operations Center, 5220 Riverside Drive, Moreno Valley, Riverside County, CA

Residual Negative Pressure in Vacuum Tubes Might Increase the Risk of Spurious Hemolysis.

PubMed

Xiao, Tong-Tong; Zhang, Qiao-Xin; Hu, Jing; Ouyang, Hui-Zhen; Cai, Ying-Mu

2017-05-01

We planned a study to establish whether spurious hemolysis may occur when negative pressure remains in vacuum tubes. Four tubes with different vacuum levels (-54, -65, -74, and -86 kPa) were used to examine blood drawn from one healthy volunteer; the tubes were allowed to stand for different times (1, 2, 3, and 4 hours). The plasma was separated and immediately tested for free hemoglobin (FHb). Thirty patients were enrolled in a verification experiment. The degree of hemolysis observed was greater when the remaining negative pressure was higher. Significant differences were recorded in the verification experiment. The results suggest that residual negative pressure might increase the risk of spurious hemolysis.

Impact of Use of Smaller Volume, Smaller Vacuum Blood Collection Tubes on Hemolysis in Emergency Department Blood Samples.

PubMed

Phelan, Michael P; Reineks, Edmunds Z; Berriochoa, Jacob P; Schold, Jesse D; Hustey, Fredric M; Chamberlin, Janelle; Kovach, Annmarie

2017-10-01

Hemolyzed blood samples commonly occur in hospital emergency departments (EDs). Our objective was to determine whether replacing standard large-volume/high-vacuum sample tubes with low-volume/low-vacuum tubes would significantly affect ED hemolysis. This was a prospective intervention of the use of small-volume/vacuum collection tubes. We evaluated all potassium samples in ED patients and associated hemolysis. We used χ2 tests to compare hemolysis incidence prior to and following utilization of small tubes for chemistry collection. There were 35,481 blood samples collected during the study period. Following implementation of small-volume tubes, overall hemolysis decreased from a baseline of 11.8% to 2.9% (P < .001) with corresponding reductions in hemolysis with comment (8.95% vs 1.99%; P < .001) gross hemolysis (2.84% vs 0.90%; P < .007). This work demonstrates that significant improvements in ED hemolysis can be achieved by utilization of small-volume/vacuum sample collection tubes. © American Society for Clinical Pathology, 2017. All rights reserved. For permissions, please e-mail: journals.permissions@oup.com

Compact vacuum tubes with GaAs(Cs,O) photocathodes for studying spin-dependent phenomena

NASA Astrophysics Data System (ADS)

Alperovich, V. L.; Orlov, D. A.; Grishaev, V. G.; Kosolobov, S. N.; Jaroshevich, A. S.; Scheibler, H. E.; Terekhov, A. S.

2009-08-01

Compact proximity focused vacuum tubes with GaAs(Cs,O) photocathodes are used for experimental studying spindependent phenomena. Firstly, spin-dependent emission of optically oriented electrons from p-GaAs(Cs,O) into vacuum in a magnetic field normal to the surface was observed in a nonmagnetic vacuum diode. This phenomenon is explained by the jump in the electron g-factor at the semiconductor-vacuum interface. Due to this jump, the effective electron affinity on the semiconductor surface depends on the mutual direction of optically oriented electron spins and the magnetic field, resulting in the spin-dependent photoemission. It is demonstrated that the observed effect can be used for the determination of spin diffusion length in semiconductors. Secondly, we developed a prototype of a new spin filter, which consists of a vacuum tube with GaAs(Cs,O) photocathode and a nickel-covered venetian blind dynode. Preliminary results on spin-dependent reflection of electrons from the oxidized polycrystal nickel layer are presented.

Vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors.

PubMed

Yi, H T; Chen, Y; Czelen, K; Podzorov, V

2011-12-22

A novel vacuum lamination approach to fabrication of high-performance single-crystal organic field-effect transistors has been developed. The non-destructive nature of this method allows a direct comparison of field-effect mobilities achieved with various gate dielectrics using the same single-crystal sample. The method also allows gating delicate systems, such as n -type crystals and SAM-coated surfaces, without perturbation. Copyright © 2011 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Pneumatic vacuum tube message center, basement room 23, looking southeast ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Pneumatic vacuum tube message center, basement room 23, looking southeast toward doorway and corridor. Note soundproof walls, pedestal flooring, and cable tray suspended from the ceiling - March Air Force Base, Strategic Air Command, Combat Operations Center, 5220 Riverside Drive, Moreno Valley, Riverside County, CA

Glow discharge cleaning of vacuum switch tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hayashi, T.; Toya, H.

1991-10-01

This paper reports that glow discharge cleaning has ben advancing as a means of degassing vacuum chambers constructed for a large accelerator or for nuclear fusion research. To clean the whole surface of parts inside a vacuum switch tube (VST), a new technique is tried which generates glow discharge between the inner electrodes and copper grid surrounding it. Photographic observation reveals that the glow discharge spreads out and cleans the whole surface inside the VST. A breakdown test between the inner electrodes shows the effect of the cleaning with this technique. Higher breakdown voltage between the inner electrodes is attainedmore » by performing this glow discharge cleaning in argon rather than hydrogen gas. The difference of the cleaning effect seems to be attributed to that of the energy transfer from ion species to the absorbed molecules and microprotrusions on the surfaces.« less

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

PubMed Central

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-01-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation. PMID:27645425

Synaptic organic transistors with a vacuum-deposited charge-trapping nanosheet

NASA Astrophysics Data System (ADS)

Kim, Chang-Hyun; Sung, Sujin; Yoon, Myung-Han

2016-09-01

Organic neuromorphic devices hold great promise for unconventional signal processing and efficient human-machine interfaces. Herein, we propose novel synaptic organic transistors devised to overcome the traditional trade-off between channel conductance and memory performance. A vacuum-processed, nanoscale metallic interlayer provides an ultra-flat surface for a high-mobility molecular film as well as a desirable degree of charge trapping, allowing for low-temperature fabrication of uniform device arrays on plastic. The device architecture is implemented by widely available electronic materials in combination with conventional deposition methods. Therefore, our results are expected to generate broader interests in incorporation of organic electronics into large-area neuromorphic systems, with potential in gate-addressable complex logic circuits and transparent multifunctional interfaces receiving direct optical and cellular stimulation.

Flux tubes and coherence length in the SU(3) vacuum

NASA Astrophysics Data System (ADS)

Cea, P.; Cosmai, L.; Cuteri, F.; Papa, A.

An estimate of the London penetration and coherence lengths in the vacuum of the SU(3) pure gauge theory is given downstream an analysis of the transverse profile of the chromoelectric flux tubes. Within ordinary superconductivity, a simple variational model for the magnitude of the normalized order parameter of an isolated vortex produces an analytic expression for magnetic field and supercurrent density. In the picture of SU(3) vacuum as dual superconductor, this expression provides us with the function that fits the chromoelectric field data. The smearing procedure is used in order to reduce noise.

Flux tubes in the QCD vacuum

NASA Astrophysics Data System (ADS)

Cea, Paolo; Cosmai, Leonardo; Cuteri, Francesca; Papa, Alessandro

2017-06-01

The hypothesis that the QCD vacuum can be modeled as a dual superconductor is a powerful tool to describe the distribution of the color field generated by a quark-antiquark static pair and, as such, can provide useful clues for the understanding of confinement. In this work we investigate, by lattice Monte Carlo simulations of the S U (3 ) pure gauge theory and of (2 +1 )-flavor QCD with physical mass settings, some properties of the chromoelectric flux tube at zero temperature and their dependence on the physical distance between the static sources. We draw some conclusions about the validity domain of the dual superconductor picture.

Vacuum microelectronics for beam power and rectennas

NASA Technical Reports Server (NTRS)

Gray, Henry F.

1989-01-01

Vacuum Microelectronic devices can be described as vacuum transistors or micro-miniature vacuum tubes, as one chooses. The fundamental reason behind this new technology is the very large current densities available from field emitters, namely as high as 10(8) A/sq cm. Array current densities as high as 1000 A/sq cm have been measured. Total electron transit times from source to drain for 1 micron feature size devices have been predicted to be about 150fs. This very short transit time implies the possibility of submillimeter wave transmitters and rectennas in devices which can operate with reasonably high voltages and which are small in size and are lightweight. In addition, they are expected to be extremely radiation hard and very temperature insensitive. That is, they are expected to have radiation hardness characteristics similar to vacuum tubes, and both the high temperature and low temperature limits should be determined by the package. That is, there should be no practical intrinsic temperature or carrier freezeout problems for devices based on metals or composites. But the technology is difficult to implement at the present time because it is based on 300 to 500 angstrom radius field emitters which must be relatively uniform. There is also the need to understand the non-equilibrium transport physics in the near-surface regions of the field emitters.

Methods for batch fabrication of cold cathode vacuum switch tubes

DOEpatents

Walker, Charles A [Albuquerque, NM; Trowbridge, Frank R [Albuquerque, NM

2011-05-10

Methods are disclosed for batch fabrication of vacuum switch tubes that reduce manufacturing costs and improve tube to tube uniformity. The disclosed methods comprise creating a stacked assembly of layers containing a plurality of adjacently spaced switch tube sub-assemblies aligned and registered through common layers. The layers include trigger electrode layer, cathode layer including a metallic support/contact with graphite cathode inserts, trigger probe sub-assembly layer, ceramic (e.g. tube body) insulator layer, and metallic anode sub-assembly layer. Braze alloy layers are incorporated into the stacked assembly of layers, and can include active metal braze alloys or direct braze alloys, to eliminate costs associated with traditional metallization of the ceramic insulator layers. The entire stacked assembly is then heated to braze/join/bond the stack-up into a cohesive body, after which individual switch tubes are singulated by methods such as sawing. The inventive methods provide for simultaneously fabricating a plurality of devices as opposed to traditional methods that rely on skilled craftsman to essentially hand build individual devices.

Vacuum-processed polyethylene as a dielectric for low operating voltage organic field effect transistors

PubMed Central

Kanbur, Yasin; Irimia-Vladu, Mihai; Głowacki, Eric D.; Voss, Gundula; Baumgartner, Melanie; Schwabegger, Günther; Leonat, Lucia; Ullah, Mujeeb; Sarica, Hizir; Erten-Ela, Sule; Schwödiauer, Reinhard; Sitter, Helmut; Küçükyavuz, Zuhal; Bauer, Siegfried; Sariciftci, Niyazi Serdar

2012-01-01

We report on the fabrication and performance of vacuum-processed organic field effect transistors utilizing evaporated low-density polyethylene (LD-PE) as a dielectric layer. With C60 as the organic semiconductor, we demonstrate low operating voltage transistors with field effect mobilities in excess of 4 cm2/Vs. Devices with pentacene showed a mobility of 0.16 cm2/Vs. Devices using tyrian Purple as semiconductor show low-voltage ambipolar operation with equal electron and hole mobilities of ∼0.3 cm2/Vs. These devices demonstrate low hysteresis and operational stability over at least several months. Grazing-angle infrared spectroscopy of evaporated thin films shows that the structure of the polyethylene is similar to solution-cast films. We report also on the morphological and dielectric properties of these films. Our experiments demonstrate that polyethylene is a stable dielectric supporting both hole and electron channels. PMID:23483783

Review of a solution-processed vertical organic transistor as a solid-state vacuum tube

NASA Astrophysics Data System (ADS)

Lin, Hung-Cheng; Zan, Hsiao-Wen; Chao, Yu-Chiang; Chang, Ming-Yu; Meng, Hsin-Fei

2015-05-01

In this paper, we investigate the key issues in raising the on/off current ratio and increasing the output current. A 1 V operated inverter composed of an enhancement-mode space-charge-limited transistor (SCLT) and a depletion-mode SCLT is demonstrated using the self-assembled monolayer modulation process. With a bulk-conduction mechanism, good bias-stress reliability, and good bending durability are obtained. Finally, key scaling-up processes, including nanoimprinting and blade-coated nanospheres, are demonstrated.

A nanoscale vacuum-tube diode triggered by few-cycle laser pulses

NASA Astrophysics Data System (ADS)

Higuchi, Takuya; Maisenbacher, Lothar; Liehl, Andreas; Dombi, Péter; Hommelhoff, Peter

2015-02-01

We propose and demonstrate a nanoscale vacuum-tube diode triggered by few-cycle near-infrared laser pulses. It represents an ultrafast electronic device based on light fields, exploiting near-field optical enhancement at surfaces of two metal nanotips. The sharper of the two tips displays a stronger field-enhancement, resulting in larger photoemission yields at its surface. One laser pulse with a peak intensity of 4.7 × 1011 W/cm2 triggers photoemission of ˜16 electrons from the sharper cathode tip, while emission from the blunter anode tip is suppressed by 19 dB to ˜0.2 electrons per pulse. Thus, the laser-triggered current between two tips exhibit a rectifying behavior, in analogy to classical vacuum-tube diodes. According to the kinetic energy of the emitted electrons and the distance between the tips, the total operation time of this laser-triggered nanoscale diode is estimated to be below 1 ps.

A vacuum tube vee-trough collector for solar heating and air conditioning applications

NASA Technical Reports Server (NTRS)

Selcuk, M. K.

1978-01-01

An analysis is conducted of the performance of a vee-trough vacuum tube collector proposed for use in solar heating and cooling applications. The vee-trough reflector is a triangular sectioned, flat surfaced reflector, whose axis is laid in the East-West direction. A vacuum tube receiver placed at the bottom of the vee-trough collects solar heat most efficiently since convection is completely eliminated. Radiation losses are reduced by use of selective coatings on the absorber. Owing to its high temperature capabilities (300-400 F), the proposed scheme could also be used for power generation applications in combination with an organic Rankine conversion system. It is especially recommended for unattended pumping stations since the reflectors only require reversal once every six months.

A fixed collector employing reversible vee-trough concentrator and a vacuum tube receiver for high temperature solar energy systems

NASA Technical Reports Server (NTRS)

Selcuk, M. K.

1976-01-01

A solar heat collection system employing non-tracking reflectors integrated with a fixed vacuum tube receiver which achieves modest year-round concentration (about 2) of the sunlight at low capital costs is discussed. The axis of the vee-trough reflector lies in a east-west direction and requires reversal of the reflector surfaces only twice a year without disturbing the receiver tubes and associated plumbing. It collects most of the diffuse flux. The vacuum tube receiver with selective absorber has no convection losses while radiation and conduction losses are minimal. Significant cost reductions are offered since the vee-trough can be fabricated from inexpensive polished or plastic reflector laminated sheet metal covering 2/3 of the collection area, and only about 1/3 of the area is covered with the more expensive vacuum tube receivers. Thermal and economic performance of the vee-trough vacuum tube system, year-round variation of the concentration factor, incident flux, useful heat per unit area at various operation temperatures and energy cost estimates are presented. The electrical energy cost is estimated to be 77 mills/kWh, and the system construction cost is estimated to be $1140/kWe.

Separation phenomena for gaseous mixture flowing through a long tube into vacuum

NASA Astrophysics Data System (ADS)

Sharipov, Felix; Kalempa, Denize

2005-12-01

A gaseous mixture flow through a long tube into vacuum is considered assuming the pressure to be arbitrary at the tube entrance. Thus, the flow regime can vary from hydrodynamic at the entrance to free molecular at the tube exit. The distributions of density and concentration along the tube were obtained for the mixture helium-xenon at various values of the concentration and rarefaction at the tube entrance. It was shown that the variation of the concentration along the tube can be significant. The flow rates of both species determining the chemical composition in the down flow container were calculated. An analysis of these data shows that the chemical composition in the down flow container can be different from that in the up flow one, i.e., the separation phenomenon takes place. The results presented in the article can be used in practice to avoid the separation phenomenon or to intensify it if necessary.

Solution-processed field-effect transistors based on dihexylquaterthiophene films with performances exceeding those of vacuum-sublimed films.

PubMed

Leydecker, Tim; Trong Duong, Duc; Salleo, Alberto; Orgiu, Emanuele; Samorì, Paolo

2014-12-10

Solution-processable oligothiophenes are model systems for charge transport and fabrication of organic field-effect transistors (OFET) . Herein we report a structure vs function relationship study focused on the electrical characteristics of solution-processed dihexylquaterthiophene (DH4T)-based OFET. We show that by combining the tailoring of all interfaces in the bottom-contact bottom-gate transistor, via chemisorption of ad hoc molecules on electrodes and dielectric, with suitable choice of the film preparation conditions (including solvent type, concentration, volume, and deposition method), it is possible to fabricate devices exhibiting field-effect mobilities exceeding those of vacuum-processed DH4T transistors. In particular, the evaporation rate of the solvent, the processing temperature, as well as the concentration of the semiconducting material were found to hold a paramount importance in driving the self-assembly toward the formation of highly ordered and low-dimensional supramolecular architectures, confirming the kinetically governed nature of the self-assembly process. Among the various architectures, hundreds-of-micrometers long and thin DH4T crystallites exhibited enhanced charge transport.

Basic Radio Circuits and Vacuum Tube AM Troubleshooting; Radio and Television Service, Intermediate: 9785.03.

ERIC Educational Resources Information Center

Dade County Public Schools, Miami, FL.

The 135-hour quinmester course covers study of basic radio circuits as applied to vacuum tube radios in six blocks of instruction: orientation; AM receivers with tubes; no signal, audio failure; distortion; weak, noisy signals; and a post-test. Each block is subdivided into several units, and block objectives are outlined. Completion of AC…

Pseudopolycythemia, pseudothrombocytopenia, and pseudoleukopenia due to overfilling of blood collection vacuum tubes.

PubMed

Pewarchuk, W; VanderBoom, J; Blajchman, M A

1992-01-01

A patient blood sample with an unexpectedly high hemoglobin level, high hematocrit, low white blood cell count, and low platelet count was recognized as being spurious based on previously available data. Repeated testing of the original sample showed a gradual return of all parameters to expected levels. We provide evidence that the overfilling of blood collection vacuum tubes can lead to inadequate sample mixing and that, in combination with the settling of the cellular contents in the collection tubes, can result in spuriously abnormal hematological parameters as estimated by an automated method.

Demonstrations with a Vacuum: Old Demonstrations for New Vacuum Pumps.

ERIC Educational Resources Information Center

Greenslade, Thomas B., Jr.

1989-01-01

Explains mechanisms of 19th-century vacuum pumps. Describes demonstrations using the pump including guinea and feather tube, aurora tube, electric egg, Gassiots cascade, air mill, bell in vacuum, density and buoyancy of air, fountain in vacuum, mercury shower, palm and bladder glasses, Bacchus demonstration, pneumatic man-lifter, and Magdeburg…

Experimental evaluation of a fixed collector employing vee-trough concentrator and vacuum tube receivers

NASA Technical Reports Server (NTRS)

Selcuk, M. K.

1977-01-01

A test bed for experimental evaluation of a fixed solar collector which combines an evacuated glass tube solar receiver with a flat plate/black chrome plated copper absorber and an asymmetric vee-trough concentrator was designed and constructed. Earlier predictions of thermal performance were compared with test data acquired for a bare vacuum tube receiver; and receiver tubes with Alzak aluminum, aluminized FEP Teflon film laminated sheet metal and second surface ordinary mirror reflectors. Test results and system economics as well as objectives of an ongoing program to obtain long-term performance data are discussed.

Comparative studies of silicon photomultipliers and traditional vacuum photomultiplier tubes

NASA Astrophysics Data System (ADS)

Shi, Feng; Lü, Jun-Guang; Lu, Hong; Wang, Huan-Yu; Ma, Yu-Qian; Hu, Tao; Zhou, Li; Cai, Xiao; Sun, Li-Jun; Yu, Bo-Xiang; Fang, Jian; Xie, Yu-Guang; An, Zheng-Hua; Wang, Zhi-Gang; Gao, Min; Li, Xin-Qiao; Xu, Yan-Bing; Wang, Ping; Sun, Xi-Lei; Zhang, Ai-Wu; Xue, Zhen; Liu, Hong-Bang; Wang, Xiao-Dong; Zhao, Xiao-Yun; Zheng, Yang-Heng; Meng, Xiang-Cheng; Wang, Hui

2011-01-01

Silicon photomultipliers (SiPMs) are a new generation of semiconductor-based photon counting devices with the merits of low weight, low power consumption and low voltage operation, promising to meet the needs of space particle physics experiments. In this paper, comparative studies of SiPMs and traditional vacuum photomultiplier tubes (PMTs) have been performed regarding the basic properties of dark currents, dark counts and excess noise factors. The intrinsic optical crosstalk effect of SiPMs was evaluated.

Development of a low-permeability glass--ceramic to seal to molybdenum. [For long-life vacuum tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eagan, R. J.

1975-03-01

This report describes the development of low-permeability glass-ceramics which can be sealed directly to molybdenum for the purpose of producing long-life vacuum tubes. Low permeability to helium and thermal expansion match to molybdenum are the bases upon which particular glass-ceramic compositions were selected and developed. The fabrication of tube envelopes using glass-ceramics is simplified when compared to conventional ceramic/metal tubes and these melting and sealing techniques are presented.

Laparoscopic temporary bilateral uterine artery occlusion with silicone tubing to prevent hemorrhage during vacuum aspiration of cesarean scar pregnancies.

PubMed

Wang, Lingling; Sun, Lingbin; Wang, Lijun; Chen, Huifang; Ouyang, Xue; Qiu, Huiling

2015-11-01

The aim of this study was to determine the feasibility and effects of temporary bilateral uterine artery occlusion with silicone tubing on blood loss during vacuum aspiration of cesarean scar pregnancies (CSP). Six patients with CSP underwent removal of gestational masses via vacuum aspiration. At the beginning of the procedure, all patients underwent laparoscopic temporary bilateral uterine artery occlusion with tubing. The main measurements were the operating time, operative blood loss, Doppler examination of the uterine arteries, and complications of procedure. The median operation time was 99 min, the median time needed to put the tubing in place (the time from the opening of the retroperitoneum to positioning of the tubing) was 45.5 min and the median time of bilateral uterine artery occlusion with tubing was 32.5 min. The median blood loss was 97.5 mL, and none of the patients required blood transfusion. Doppler examination showed no difference in the pre- and postoperative resistance or pulsatility indices of the uterine vessels. There were no conspicuous complications. The serum ß-human chorionic gonadotrophin level decreased to normal within 14-27 days after the operation. Laparoscopic temporary bilateral uterine artery occlusion with silicone tubing is an effective, minimally invasive procedure for reducing blood loss during vacuum aspiration in patients with CSP. © 2015 Japan Society of Obstetrics and Gynecology.

To mix or not to mix venous blood samples collected in vacuum tubes?

PubMed

Parenmark, Anna; Landberg, Eva

2011-09-08

There are recommendations to mix venous blood samples by inverting the tubes immediately after venipuncture. Though mixing allows efficient anticoagulation in plasma tubes and fast initiation of coagulation in serum tubes, the effect on laboratory analyses and risk of haemolysis has not been thoroughly evaluated. Venous blood samples were collected by venipuncture in vacuum tubes from 50 patients (10 or 20 patients in each group). Four types of tubes and 18 parameters used in routine clinical chemistry were evaluated. For each patient and tube, three types of mixing strategies were used: instant mixing, no mixing and 5 min of rest followed by mixing. Most analyses did not differ significantly in samples admitted to different mixing strategies. Plasma lactate dehydrogenase and haemolysis index showed a small but significant increase in samples omitted to instant mixing compared to samples without mixing. However, in one out of twenty non-mixed samples, activated partial thromboplastin time was seriously affected. These results indicate that mixing blood samples after venipuncture is not mandatory for all types of tubes. Instant mixing may introduce interference for those analyses susceptible to haemolysis. However, tubes with liquid-based citrate buffer for coagulation testing should be mixed to avoid clotting.

The Vacuum Silicon Photomultiplier Tube (VSiPMT): A new version of a hybrid photon detector

NASA Astrophysics Data System (ADS)

Russo, Stefano; Barbarino, Giancarlo; de Asmundis, Riccardo; De Rosa, Gianfranca

2010-11-01

The future astroparticle experiments will study both energetic phenomena and extremely rare events from astrophysical sources. Since most of these families of experiments are carried out by using scintillation phenomena, Cherenkov or fluorescence radiation, the development of photosensitive detectors seems to be the right way to increase the experimental sensitivity. Therefore we propose an innovative design for a modern, high gain, silicon-based Vacuum Silicon Photomultiplier Tube (VSiPMT), which combines three fully established and well-understood technologies: the manufacture of hemispherical vacuum tubes with the possibility of very large active areas, the photocathode glass deposition and the novel Geiger-mode avalanche silicon photodiode (G-APD) for which a mass production is today available. This new design, based on G-APD as the electron multiplier, allows overcoming the limits of a classical PMT dynode chain.

Open-tube diffusion techniques for InP/LnGaAs heterojunctior bipolar transistors

NASA Astrophysics Data System (ADS)

Schuitemaker, P.; Houston, P. A.

1986-11-01

Open-tube diffusion techniques used between 450 and 600° C are described which involve the supply of diffusant from a vapour source (via a solution) and a solid evaporated metal source. Investigations of Zn into InP and InGaAs(P) have been undertaken using both sources. SIMS profile analyses show that in the case of the vapour source the profiles indicate a concentration-dependent diffusion coefficient while the solid source diffusions can be well described by a Gaussian-type profile. The usefulness of the vapour source method has been demonstrated in the fabrication of bipolar transistors which exhibit good d.c. characteristics. The solid source method is limited by the slow diffusion velocity and more gradual profile. The InGaAs(P)/InP materials system has important applications in optical communications and future high speed microwave and switching devices. Useful technologies allied to the introduction of impurities into Si by diffusion, have gradually been emerging for use in the III-V semiconductor family. Closed tube systems1 have been used in order to contain the volatile group V species and prevent surface erosion. In addition, simpler open tube systems2,3 have been developed that maintain a sufficient overpressure of the group V element. Zn and Cd p-dopants have been studied extensively because of the volatility and relatively large diffusion rates in III-V semiconductors. Opentube diffusion into both InP and InGaAs2-6 has been studied but little detail has appeared concerning InGaAs and InGaAsP. In this paper we describe a comprehensive study of the diffusion of Zn into InP and InGaAs(P) using both open-tube vapour source and a Au/Zn/Au evaporated solid source with SiNx acting both as a mask and also an encapsulant to prevent loss of Zn and decomposition of the substrate material. The techniques have been successfully applied to the fabrication of InP/lnGaAs heterojunction bipolar transistors which show good dc characteristics. Reference to InGaAs in

The formation of an ion beam in a vacuum neutron tube

NASA Astrophysics Data System (ADS)

Agafonov, A. V.; Tarakanov, V. P.

2014-09-01

The formation of a deuteron beam in a diode with a plasma emitter that is integrated into the structure of a vacuum neutron tube is considered. Computations are carried out for plasma with given time dependences of parameters (density, relative concentration, and expansion velocity) at the inlet to an accelerating gap. It is shown that it is possible to increase the ion-beam current possible by sectioning the diode at the given external parameters.

Vacuum tube operation analysis under multi-harmonic driving and heavy beam loading effect in J-PARC RCS

NASA Astrophysics Data System (ADS)

Yamamoto, M.; Nomura, M.; Shimada, T.; Tamura, F.; Hara, K.; Hasegawa, K.; Ohmori, C.; Toda, M.; Yoshii, M.; Schnase, A.

2016-11-01

An rf cavity in the J-PARC RCS not only covers the frequency range of a fundamental acceleration pattern but also generates multi-harmonic rf voltage because it has a broadband impedance. However, analyzing the vacuum tube operation in the case of multi-harmonics is very complicated because many variables must be solved in a self-consistent manner. We developed a method to analyze the vacuum tube operation using a well-known formula and which includes the dependence on anode current for some variables. The calculation method is verified with beam tests, and the results indicate that it is efficient under condition of multi-harmonics with a heavy beam loading effect.

Flux tubes in the SU(3) vacuum: London penetration depth and coherence length

NASA Astrophysics Data System (ADS)

Cea, Paolo; Cosmai, Leonardo; Cuteri, Francesca; Papa, Alessandro

2014-05-01

Within the dual superconductor scenario for the QCD confining vacuum, the chromoelectric field generated by a static qq¯ pair can be fitted by a function derived, by dual analogy, from a simple variational model for the magnitude of the normalized order parameter of an isolated Abrikosov vortex. Previous results for the SU(3) vacuum are revisited, but here the transverse chromoelectric field is measured by means of the connected correlator of two Polyakov loops and, in order to reduce noise, the smearing procedure is used instead of cooling. The penetration and coherence lengths of the flux tube are then extracted from the fit and compared with previous results.

Goddard with Vacuum Tube Device

NASA Image and Video Library

2017-12-08

Robert H. Goddard with vacuum tube apparatus he built in 1916 to research rocket efficiency. Dr. Robert Hutchings Goddard is commonly referred to as the father of American rocketry. The same year he built the apparatus, Goddard wrote a study requesting funding from the Smithsonian Institution so that he could continue his rocket research, which he had begun in 1907 while still a student at Worcester Polytechnic Institute. A brilliant physicist, with a unique genius for invention, Goddard may not have succeeded had it not been for the Smithsonian Institution and later the Daniel Guggenheim Foundation and his employer the Worcester Polytechnic Institute of Clark University. The former gave him research monies while the Institute provided leaves of absence so that he could continue his life's work. He was the first scientist who not only realized the potential of missiles and space flight, but also contributed directly to making them a reality. NASA Goddard Space Flight Center enables NASA’s mission through four scientific endeavors: Earth Science, Heliophysics, Solar System Exploration, and Astrophysics. Goddard plays a leading role in NASA’s accomplishments by contributing compelling scientific knowledge to advance the Agency’s mission. Follow us on Twitter Join us on Facebook

Noise characteristics of single-walled carbon nanotube network transistors.

PubMed

Kim, Un Jeong; Kim, Kang Hyun; Kim, Kyu Tae; Min, Yo-Sep; Park, Wanjun

2008-07-16

The noise characteristics of randomly networked single-walled carbon nanotubes grown directly by plasma enhanced chemical vapor deposition (PECVD) are studied with field effect transistors (FETs). Due to the geometrical complexity of nanotube networks in the channel area and the large number of tube-tube/tube-metal junctions, the inverse frequency, 1/f, dependence of the noise shows a similar level to that of a single single-walled carbon nanotube transistor. Detailed analysis is performed with the parameters of number of mobile carriers and mobility in the different environment. This shows that the change in the number of mobile carriers resulting in the mobility change due to adsorption and desorption of gas molecules (mostly oxygen molecules) to the tube surface is a key factor in the 1/f noise level for carbon nanotube network transistors.

Simulation and development of novel slow-wave structures for miniaturized THz-band vacuum-tube devices

NASA Astrophysics Data System (ADS)

Benedik, Andrey I.; Karetnikova, Tatiana A.; Torgashov, Roman A.; Terentyuk, Artem G.; Rozhnev, Andrey G.; Torgashov, Gennadiy V.; Ryskin, Nikita M.

2018-04-01

Microfabricated vacuum-tube millimeter- and THz-band sources are of great interest for numerous applications such as communications, radar, sensors, imaging, etc. Recently, miniaturized sheet-beam traveling-wave tubes for sub-THz and THz operation have attracted a considerable interest. In this paper, we present the results of modeling and development of slow-wave structures (SWS) for medium power (10-100 W) traveling-wave tube (TWT) amplifiers and backwardwave oscillators (BWO) in near-THz frequency band. Different types of SWSs are considered, such as double-vane SWS for TWT with a sheet electron beam, a folded-waveguide SWS, and novel planar SWSs on dielectric substrates.

Tubing vs. buckets: a cost comparison

Treesearch

Neil K. Huyler

1975-01-01

Equipment investment for tubing-vacuum systems was significantly less than that for bucket systems. Tubing-vacuum systems required about 22 percent less labor input, the major labor input being completed before sap-flow periods. Annual cost of operation was less for tubing-vacuum than the bucket system. Small tubing-vacuum operations showed more profit potential than...

Cold cathode vacuum gauging system

DOEpatents

Denny, Edward C.

2004-03-09

A vacuum gauging system of the cold cathode type is provided for measuring the pressure of a plurality of separate vacuum systems, such as in a gas centrifuge cascade. Each casing is fitted with a gauge tube assembly which communicates with the vacuum system in the centrifuge casing. Each gauge tube contains an anode which may be in the form of a slender rod or wire hoop and a cathode which may be formed by the wall of the gauge tube. The tube is provided with an insulated high voltage connector to the anode which has a terminal for external connection outside the vacuum casing. The tube extends from the casing so that a portable magnet assembly may be inserted about the tube to provide a magnetic field in the area between the anode and cathode necessary for pressure measurements in a cold cathode-type vacuum gauge arrangement. The portable magnetic assembly is provided with a connector which engages the external high voltage terminal for providing power to the anode within in the gauge tube. Measurement is made in the same manner as the prior cold cathode gauges in that the current through the anode to the cathode is measured as an indication of the pressure. By providing the portable magnetic assembly, a considerable savings in cost, installation, and maintenance of vacuum gauges for pressure measurement in a gas centrifuge cascade is realizable.

Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hershcovitch, A., E-mail: hershcovitch@bnl.gov; Blaskiewicz, M.; Brennan, J. M.

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made,more » with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.« less

EDITORIAL: Reigniting innovation in the transistor Reigniting innovation in the transistor

NASA Astrophysics Data System (ADS)

Demming, Anna

2012-09-01

Today the transistor is integral to the electronic circuitry that wires our lives. When Bardeen and Brattain first observed an amplified signal by connecting electrodes to a germanium crystal they saw that their 'semiconductor triode' could prove a useful alternative to the more cumbersome vacuum tubes used at the time [1]. But it was perhaps William Schottky who recognized the extent of the transistor's potential. A basic transistor has three or more terminals and current across one pair of terminals can switch or amplify current through another pair. Bardeen, Brattain and Schottky were jointly awarded a Nobel Prize in 1956 'for their researches on semiconductors and their discovery of the transistor effect' [2]. Since then many new forms of the transistor have been developed and understanding of the underlying properties is constantly advancing. In this issue Chen and Shih and colleagues at Taiwan National University and Drexel University report a pyroelectrics transistor. They show how a novel optothermal gating mechanism can modulate the current, allowing a range of developments in nanoscale optoelectronics and wireless devices [3]. The explosion of interest in nanoscale devices in the 1990s inspired electronics researchers to look for new systems that can act as transistors, such as carbon nanotube [4] and silicon nanowire [5] transistors. Generally these transistors function by raising and lowering an energy barrier of kBT -1, but researchers in the US and Canada have demonstrated that the quantum interference between two electronic pathways through aromatic molecules can also modulate the current flow [6]. The device has advantages for further miniaturization where energy dissipation in conventional systems may eventually cause complications. Interest in transistor technology has also led to advances in fabrication techniques for achieving high production quantities, such as printing [7]. Researchers in Florida in the US demonstrated field effect transistor

Vacuum Ultraviolet Absorption Measurements of Atomic Oxygen in a Shock Tube

NASA Technical Reports Server (NTRS)

Meyer, Scott Andrew

1995-01-01

The absorption of vacuum ultraviolet light by atomic oxygen has been measured in the Electric Arc-driven Shock Tube (EAST) Facility at NASA-Ames Research Center. This investigation demonstrates the instrumentation required to determine atomic oxygen concentrations from absorption measurements in impulse facilities. A shock wave dissociates molecular oxygen, producing a high temperature sample of atomic oxygen in the shock tube. A probe beam is generated with a Raman-shifted ArF excimer laser. By suitable tuning of the laser, absorption is measured over a range of wavelengths in the region of the atomic line at 130.49 nm. The line shape function is determined from measurements at atomic oxygen densities of 3 x 10(exp 17) and 9 x 10(exp 17)/cu cm. The broadening coefficient for resonance interactions is deduced from this data, and this value is in accord with available theoretical models.

Vacuum Ultraviolet Absorption Measurements of Atomic Oxygen in a Shock Tube

NASA Technical Reports Server (NTRS)

Meyer, Scott Andrew

1995-01-01

The absorption of vacuum ultraviolet light by atomic oxygen has been measured in the Electric Arc-driven Shock Tube (EAST) Facility at NASA-Ames Research Center. This investigation demonstrates the instrumentation required to determine atomic oxygen concentrations from absorption measurements in impulse facilities. A shock wave dissociates molecular oxygen, producing a high temperature sample of atomic oxygen in the shock tube. A probe beam is generated with a Raman-shifted ArF excimer laser. By suitable tuning of the laser, absorption is measured over a range of wavelengths in the region of the atomic line at 130.49 nm. The line shape function is determined from measurements at atomic oxygen densities of 3x10(exp 17) and 9x10(exp 17) cm(exp -3). The broadening coefficient for resonance interactions is deduced from this data, and this value is in accord with available theoretical models.

Vacuum Ultraviolet Absorption Measurements of Atomic Oxygen in a Shock Tube

NASA Technical Reports Server (NTRS)

Meyer, Scott Andrew

1995-01-01

The absorption of vacuum ultraviolet light by atomic oxygen has been measured in the Electric Arc-driven Shock Tube (EAST) Facility at NASA-Ames Research Center. This investigation demonstrates the instrumentation required to determine atomic oxygen concentrations from absorption measurements in impulse facilities. A shock wave dissociates molecular oxygen, producing a high temperature sample of atomic oxygen in the shock tube. A probe beam is generated with a Raman-shifted ArF excimer laser. By suitable tuning of the laser, absorption is measured over a range of wavelengths in the region of the atomic line at 130.49 nm. The line shape function is determined from measurements at atomic oxygen densities of 3 x 10(exp 17) and 9 x 10(exp 17) cm(exp -3). The broadening coefficient for resonance interactions is deduced from this data, and this value is in accord with available theoretical models.

Interplay between Vacuum-Grown Monolayers of Alkylphosphonic Acids and the Performance of Organic Transistors Based on Dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene.

PubMed

Hannah, Stuart; Cardona, Javier; Lamprou, Dimitrios A; Šutta, Pavol; Baran, Peter; Al Ruzaiqi, Afra; Johnston, Karen; Gleskova, Helena

2016-09-28

Monolayers of six alkylphosphonic acids ranging from C8 to C18 were prepared by vacuum evaporation and incorporated into low-voltage organic field-effect transistors based on dinaphtho[2,3-b:2',3'-f]thieno[3,2-b]thiophene (DNTT). Similar to solution-assembled monolayers, the molecular order for vacuum-deposited monolayers improved with increasing length of the aliphatic tail. At the same time, Fourier transform infrared (FTIR) measurements suggested lower molecular coverage for longer phosphonic acids. The comparison of FTIR and vibration frequencies calculated by density functional theory indicated that monodentate bonding does not occur for any phosphonic acid. All monolayers exhibited low surface energy of ∼17.5 mJ/m(2) with a dominating Lifshitz-van der Waals component. Their surface roughness was comparable, while the nanomechanical properties were varied but not correlated to the length of the molecule. However, large improvement in transistor performance was observed with increasing length of the aliphatic tail. Upon going from C8 to C18, the mean threshold voltage decreased from -1.37 to -1.24 V, the field-effect mobility increased from 0.03 to 0.33 cm(2)/(V·s), the off-current decreased from ∼8 × 10(-13) to ∼3 × 10(-13) A, and for transistors with L = 30 μm the on-current increased from ∼3 × 10(-8) to ∼2 × 10(-6) A, and the on/off-current ratio increased from ∼3 × 10(4) to ∼4 × 10(6). Similarly, transistors with longer phosphonic acids exhibited much better air and bias-stress stability. The achieved transistor performance opens up a completely "dry" fabrication route for ultrathin dielectrics and low-voltage organic transistors.

The birth of information in the brain: Edgar Adrian and the vacuum tube.

PubMed

Garson, Justin

2015-03-01

As historian Henning Schmidgen notes, the scientific study of the nervous system would have been "unthinkable" without the industrialization of communication in the 1830s. Historians have investigated extensively the way nerve physiologists have borrowed concepts and tools from the field of communications, particularly regarding the nineteenth-century work of figures like Helmholtz and in the American Cold War Era. The following focuses specifically on the interwar research of the Cambridge physiologist Edgar Douglas Adrian, and on the technology that led to his Nobel-Prize-winning research, the thermionic vacuum tube. Many countries used the vacuum tube during the war for the purpose of amplifying and intercepting coded messages. These events provided a context for Adrian's evolving understanding of the nerve fiber in the 1920s. In particular, they provide the background for Adrian's transition around 1926 to describing the nerve impulse in terms of "information," "messages," "signals," or even "codes," and for translating the basic principles of the nerve, such as the all-or-none principle and adaptation, into such an "informational" context. The following also places Adrian's research in the broader context of the changing relationship between science and technology, and between physics and physiology, in the first few decades of the twentieth century.

A developed Ullmann reaction to III-V semiconductor nanocrystals in sealed vacuum tubes.

PubMed

Wang, Junli; Yang, Qing

2008-11-21

Group III-V (13-15, III = Ga, In, and V = P, As) semiconductor nanocrystals were effectively obtained via a developed Ullmann reaction route through the reactions of preformed nanoscale metallic indium or commercial gallium with triphenylphosphine (PPh(3)) and triphenylarsine (AsPh(3)) in sealed vacuum quartz tubes under moderate conditions at 320-400 degrees C for 8-24 h. The developed synthetic strategy in sealed vacuum tubes extends the synthesis of III-V semiconductor materials, and the air-stable PPh(3) and AsPh(3) with low toxicity provide good alternative pnicogen precursors for the synthesis of III-V nanocrystals. The analysis of XRD, ED and HRTEM established the production of one-dimensional (1D) metastable wurtzite (W) InP, InAs and GaP nanostructures in the zinc blende (ZB) products. Further investigations showed that 1D W nanostructures resulted from kinetic effects under the moderate synthetic conditions employed and the steric effect of PPh(3) and AsPh(3), and that the tendency for the synthesis of III-V nanocrystals was in the orders of IIIP > IIIAs and GaV > InV on the basis of experiments and thermodynamic calculations. Meanwhile, the microstructures and growth mechanism of the III-V nanocrystals were investigated.

Shot noise: from Schottky's vacuum tube to present-day quantum devices

NASA Astrophysics Data System (ADS)

Schonenberger, Christian; Oberholzer, Stefan

2004-05-01

Shot-noise in the electrical current through a 'device' is caused by random processes that determine the electron transport from source to drain. Two sources can be distinguished: on the hand, electrons may randomly emanate from the contacts (source and drain), because the relevant states in the reservoirs fluctuate. On the other hand, the transmission through the device is non-deterministic (non-classical). As we demonstrate in this article the former dominates noise in the vacuum tube, whereas the latter applies to coherent mesoscopic devices, which have been studied in great detail during the last decade.

Theoretical analysis of cross-talking signals between counter-streaming electron beams in a vacuum tube oscillator

NASA Astrophysics Data System (ADS)

Shin, Y. M.; Ryskin, N. M.; Won, J. H.; Han, S. T.; Park, G. S.

2006-03-01

The basic theory of cross-talking signals between counter-streaming electron beams in a vacuum tube oscillator consisting of two two-cavity klystron amplifiers reversely coupled through input/output slots is theoretically investigated. Application of Kirchhoff's laws to the coupled equivalent RLC circuit model of the device provides four nonlinear coupled equations, which are the first-order time-delayed differential equations. Analytical solutions obtained through linearization of the equations provide oscillation frequencies and thresholds of four fundamental eigenstates, symmetric/antisymmetric 0/π modes. Time-dependent output signals are numerically analyzed with variation of the beam current, and a self-modulation mechanism and transition to chaos scenario are examined. The oscillator shows a much stronger multistability compared to a delayed feedback klystron oscillator owing to the competitions among more diverse eigenmodes. A fully developed chaos region also appears at a relatively lower beam current, ˜3.5Ist, compared to typical vacuum tube oscillators (10-100Ist), where Ist is a start-oscillation current.

Plasma Sputtering Robotic Device for In-Situ Thick Coatings of Long, Small Diameter Vacuum Tubes

NASA Astrophysics Data System (ADS)

Hershcovitch, Ady

2014-10-01

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed fabricated & operated. Reason for this endeavor is to alleviate the problems of unacceptable ohmic heating of stainless steel vacuum tubes and of electron clouds, due to high secondary electron yield (SEY), in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase cathode lifetime, movable magnet package was developed, and thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced SEY to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that 10 μm Cu coated stainless steel RHIC tube has conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. Device detail and experimental results will be presented. Work supported by Brookhaven Science Associates, LLC under

THE EFFECTS OF REACTOR RADIATION ON THE ELECTRICAL PROPERTIES OF ELECTRONIC COMPONENTS. PART VII. RESISTORS AND VACUUM TUBES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Palmer, E.E.; Howell, D.

1961-06-01

Several types of vacuum tubes and resistors were irradiated with the Ground Test Reactor for a period of 100 hours at a power level of 1 megawatt. Data were taken on the components before, during, and after the irradiation. The vacuum tubes received a maximum radiation exposure of 8.64 x 10/sup 1//sup 5/ nf/ cm/sup 2/ and 3.9 x 10/sup 1//sup 0/ ergs/gm(C). A small increase in the average plate current was noted for all tube types. Pentodes subjected to the high-flunx field exhibited the largest percent change ( approx equal 6%) while dicdes remained relatively unaffected-at these radiation levels.more » The resistors received a maximum radiation exposure of 1.4 x 10/sup 1//sup 6/ nf/cm/sup 2/ and 6.2 x 10/ sup 1//sup 0/ ergs/gm(C). The degree of damage was dependent upon the material and type of construetion of the individual resistor types. The maximum observed change ( approx equal 6%) occurred in fixed-composition resistors. (auth)« less

Natural vacuum electronics

NASA Technical Reports Server (NTRS)

Leggett, Nickolaus

1990-01-01

The ambient natural vacuum of space is proposed as a basis for electron valves. Each valve is an electron controlling structure similiar to a vacuum tube that is operated without a vacuum sustaining envelope. The natural vacuum electron valves discussed offer a viable substitute for solid state devices. The natural vacuum valve is highly resistant to ionizing radiation, system generated electromagnetic pulse, current transients, and direct exposure to space conditions.

Vacuum Polarization by a Magnetic Flux Tube at Finite Temperature in the Cosmic String Space-Time

NASA Astrophysics Data System (ADS)

Spinelly, J.; Bezerra de Mello, E. R.

In this paper, we analyze the effect produced by the temperature in the vacuum polarization associated with a charged massless scalar field in the presence of a magnetic flux tube in the cosmic string space-time. Three different configurations of magnetic fields are taken into account: (i) a homogeneous field inside the tube, (ii) a field proportional to 1/r, and (iii) a cylindrical shell with δ-function. In these three cases, the axis of the infinitely long tube of radius R coincides with the cosmic string. Because of the complexity of this analysis in the region inside the tube, we consider the thermal effect in the region outside. In order to develop this analysis, we construct the thermal Green function associated with this system for the three above-mentioned situations considering points in the region outside the tube. We explicitly calculate, in the high-temperature limit, the thermal average of the field square and the energy-momentum tensor.

Sodium citrate vacuum tubes validation: preventing preanalytical variability in routine coagulation testing.

PubMed

Lima-Oliveira, Gabriel; Lippi, Giuseppe; Salvagno, Gian Luca; Montagnana, Martina; Picheth, Geraldo; Guidi, Gian Cesare

2013-04-01

Sometimes in-vitro diagnostic devices (e.g. blood collection tubes) are not validated before use or when the producer's brand is changed. The aim of this study was to validate five brands of sodium citrate vacuum tubes. Blood specimens from 50 volunteers were collected in five different tube brands (I: Venosafe, II: VACUETTE, III: BD Vacutainer, IV: LABOR IMPORT and V: S-Monovette). Routine coagulation tests [activated partial thromboplastin time (aPTT), prothrombin time (PT), and fibrinogen (FIB)] were performed on ACL TOP instrument using HemosIL reagents. The significance of the differences between samples was assessed by paired Student's t-test, set at P < 0.005. Significant differences were observed for: PT when comparing I vs. II, I vs. III, I vs. V, II vs. III, II vs. IV, II vs. V, III vs. IV, III vs. V and IV vs. V; aPTT when comparing I vs. II, I vs. III, I vs. IV, II vs. IV, III vs. IV and IV vs. V. No differences were observed among brands for FIB determination. We suggest that every laboratory management should both standardize the procedures and frequently evaluate the quality of in-vitro diagnostic devices.

Metal glass vacuum tube solar collectors are approaching lower-medium temperature heat application.

PubMed

Jiang, Xinian

2010-04-26

Solar thermal collectors are widely used worldwide mainly for hot water preparation at a low temperature (less than 80 degrees C). Applications including many industrial processes and central air conditioning with absorption chillers, instead require lower-medium temperature heat (between 90 degrees C and 150 degrees C) to be driven when using solar thermal energy. The metal absorber glass vacuum tube collectors (MGVT) are developed for this type of applications. Current state-of-art and possible future technology development of MGVT are presented.

Metal glass vacuum tube solar collectors are approaching lower-medium temperature heat application.

PubMed

Jiang, Xinian

2010-04-26

Solar thermal collectors are widely used worldwide mainly for hot water preparation at a low temperature (less than 80?C). Applications including many industrial processes and central air conditioning with absorption chillers, instead require lower-medium temperature heat (between 90 degrees C and 150 degrees C) to be driven when using solar thermal energy. The metal absorber glass vacuum tube collectors (MGVT) are developed for this type of applications. Current state-of-art and possible future technology development of MGVT are presented.

Contribution of the channel electron multiplier to the race of vacuum tubes towards picosecond resolution time

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pietri, G.

1977-02-01

The ability to tightly pack millions of microscopic secondary emitting channels into a two-dimensional, very thin, array known as a microchannel plate (MCP) provides excellent electrical charge or current amplification associated with an extremely short response time as well as very good spatial resolution. The ultimate performances in spatial and temporal resolutions achieved by MCP-based vacuum devices are discussed and illustrated by the description of a large range of experimental prototypes (photomultipliers, oscilloscope tubes, streak camera tubes, etc.) designed and produced at LEP, then tested in cooperation with Nuclear Research and Plasma Physics Centers in Europe and USA.

Theoretical analysis of cross-talking signals between counter-streaming electron beams in a vacuum tube oscillator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shin, Y.M.; Ryskin, N.M.; Won, J.H.

The basic theory of cross-talking signals between counter-streaming electron beams in a vacuum tube oscillator consisting of two two-cavity klystron amplifiers reversely coupled through input/output slots is theoretically investigated. Application of Kirchhoff's laws to the coupled equivalent RLC circuit model of the device provides four nonlinear coupled equations, which are the first-order time-delayed differential equations. Analytical solutions obtained through linearization of the equations provide oscillation frequencies and thresholds of four fundamental eigenstates, symmetric/antisymmetric 0/{pi} modes. Time-dependent output signals are numerically analyzed with variation of the beam current, and a self-modulation mechanism and transition to chaos scenario are examined. The oscillatormore » shows a much stronger multistability compared to a delayed feedback klystron oscillator owing to the competitions among more diverse eigenmodes. A fully developed chaos region also appears at a relatively lower beam current, {approx}3.5I{sub st}, compared to typical vacuum tube oscillators (10-100I{sub st}), where I{sub st} is a start-oscillation current.« less

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors.

PubMed

Matsushima, Toshinori; Sandanayaka, Atula S D; Esaki, Yu; Adachi, Chihaya

2015-09-29

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10(-2) cm(2)/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm(2)/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

NASA Astrophysics Data System (ADS)

Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

2015-09-01

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10-2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost.

A Large Tracking Detector In Vacuum Consisting Of Self-Supporting Straw Tubes

NASA Astrophysics Data System (ADS)

Wintz, P.

2004-02-01

A novel technique to stretch the anode wire simply by the gas over-pressure inside straw drift tubes reduces the necessary straw weight to an absolute minimum. Our detector will consist of more than 3000 straws filling up a cylindrical tracking volume of 1m diameter and 30cm length. The projected spatial resolution is 200μm. The detector with a total mass of less than 15kg will be operated in vacuum, but will have an added wall thickness of 3mm mylar, only. The detector design, production experience and first results will be discussed.

CROSS-DISCIPLINARY PHYSICS AND RELATED AREAS OF SCIENCE AND TECHNOLOGY: Vacuum relaxation and annealing-induced enhancement of mobility of regioregular poly (3-hexylthiophene) field-effect transistors

NASA Astrophysics Data System (ADS)

Tian, Xue-Yan; Xu, Zheng; Zhao, Su-Ling; Zhang, Fu-Jun; Xu, Xu-Rong; Yuan, Guang-Cai; Li, Jing; Sun, Qin-Jun; Wang, Ying

2009-11-01

In order to enhance the performance of regioregular poly(3-hexylthiophene) (RR-P3HT) field-effect transistors (FETs), RR-P3HT FETs are prepared by the spin-coating method followed by vacuum placement and annealing. This paper reports that the crystal structure, the molecule interconnection, the surface morphology, and the charge carrier mobility of RR-P3HT films are affected by vacuum relaxation and annealing. The results reveal that the field-effect mobility of RR-P3HT FETs can reach 4.17 × 10-2 m2/(V · s) by vacuum relaxation at room temperature due to an enhanced local self-organization. Furthermore, it reports that an appropriate annealing temperature can facilitate the crystal structure, the orientation and the interconnection of polymer molecules. These results show that the field-effect mobility of device annealed at 150 °C for 10 minutes in vacuum at atmosphere and followed by placement for 20 hours in vacuum at room temperature is enhanced dramatically to 9.00 × 10-2 cm2/(V · s).

Performances of single and two-stage pulse tube cryocoolers under different vacuum levels with and without thermal radiation shields

NASA Astrophysics Data System (ADS)

Kasthurirengan, Srinivasan; Behera, Upendra; Nadig, D. S.; Krishnamoorthy, V.

2012-06-01

Single and two-stage Pulse Tube Cryocoolers (PTC) have been designed, fabricated and experimentally studied. The single stage PTC reaches a no-load temperature of ~ 29 K at its cold end, the two-stage PTC reaches ~ 2.9 K in its second stage cold end and ~ 60 K in its first stage cold end. The two-stage Pulse Tube Cryocooler provides a cooling power of ~ 250 mW at 4.2 K. The single stage system uses stainless steel meshes along with Pb granules as its regenerator materials, while the two-stage PTC uses combinations of Pb along with Er3Ni / HoCu2 as the second stage regenerator materials. Normally, the above systems are insulated by thermal radiation shields and mounted inside a vacuum chamber which is maintained at high vacuum. To evaluate the performance of these systems in the possible conditions of loss of vacuum with and without radiation shields, experimental studies have been performed. The heat-in-leak under such severe conditions has been estimated from the heat load characteristics of the respective stages. The experimental results are analyzed to obtain surface emissivities and effective thermal conductivities as a function of interspace pressure.

New type of drift tubes for gas-discharge detectors operating in vacuum: Production technology and quality control

NASA Astrophysics Data System (ADS)

Azorskii, N. I.; Gusakov, Yu. V.; Elsha, V. V.; Enik, T. L.; Ershov, Yu. V.; Kekelidze, V. D.; Kislov, E. M.; Kolesnikov, A. O.; Madigozhin, D. T.; Movchan, S. A.; Polenkevich, I. A.; Potrebenikov, Yu. K.; Samsonov, V. A.; Shkarovskiy, S. N.; Sotnikov, A. N.; Volkov, A. D.; Zinchenko, A. I.

2017-01-01

A device for fabricating thin-wall (straw) drift tubes using polyethylene terephthalate film 36 μm thick by ultrasonic welding is described together with the technique for controlling their quality. The joint width amounts to 0.4-1.0 mm. The joint breaking strength is 31.9 kg/mm2. The argon leakage from a tube of volume 188.6 cm3 under a pressure gradient of 1.0 atm does not exceed 0.3 × 10-3 cm3/min, which is mainly related to the absence of metallization in the joint vicinity. The high strength, the low tensile creep due to the absence of glued layers, the small value of gas leakage makes the new tubes capable of reliable and long-term operation in vacuum, which is confirmed by the operation of 7168 straw tubes for two years in the NA62 experiment.

[Application research of presacral space drainage tube combined with subcutaneous vacuum pressure suction in the laparoscopic-assisted abdominoperineal resection].

PubMed

Chen, Liqi; Zeng, Changqing; Chi, Liangjie; Huang, Liangxiang; Li, Jiandang

2017-08-25

To study the management for the perineal incision after laparoscopic-assisted abdominoperineal resection for rectal cancer. Clinical data of 87 patients undergoing laparoscopic Miles operation for lower rectal cancer from June 2009 to February 2014 were collected and studied. Presacral space drainage group: presacral space drainage tube was applied in 42 patients. Combined drainage group: presacral space drainage tube combined with subcutaneous vacuum pressure suction was applied in 45 cases. In combined drainage group, except the presacral drainage tube, another drainage tube was placed subcutaneously and connected to a negative pressure ball, which was fixed on the lateral anterior of perineal wound by the further incision and drainage. After subcutaneous tube was placed for 2 weeks, as drainage fluid was limpid and <15 ml/d for 3 days, meanwhile no obvious pelvic fluid was detected by ultrasound, and the wound healed quite well without redness and edema, then the subcutaneous tube with the negative pressure ball could be removed. There were 51 males and 36 females with the mean age of 26-78(56.9±10.8) years old. The laparoscopic Miles operation was successfully completed in all the cases without death and complications. The drainage tube was placed for 4-13(8.0±2.5) days in presacral space drainage group, and for 4-14(6.7±2.4) days in combined drainage group. The subcutaneous tube was placed for 14-24(15.8±3.0) days. The primary healing rate of perineal wound in presacral space drainage group and combined drainage group was 66.7%(28/42) and 91.1%(41/45) respectively, while the perineal wound infection rate was 21.4%(9/42) and 4.4%(2/45) respectively, whose differences between two groups were both significant (χ 2 =7.911, P=0.005 and χ 2 =5.674, P=0.017). Presacral space drainage tube combined with subcutaneous vacuum pressure suction in laparoscopic-assisted abdominoperineal resection for rectal cancer has better efficacy and lower infection rate for

Traveling-Wave Tubes

NASA Technical Reports Server (NTRS)

Kory, Carol L.

1998-01-01

The traveling-wave tube (TWT) is a vacuum device invented in the early 1940's used for amplification at microwave frequencies. Amplification is attained by surrendering kinetic energy from an electron beam to a radio frequency (RF) electromagnetic wave. The demand for vacuum devices has been decreased largely by the advent of solid-state devices. However, although solid state devices have replaced vacuum devices in many areas, there are still many applications such as radar, electronic countermeasures and satellite communications, that require operating characteristics such as high power (Watts to Megawatts), high frequency (below 1 GHz to over 100 GHz) and large bandwidth that only vacuum devices can provide. Vacuum devices are also deemed irreplaceable in the music industry where musicians treasure their tube-based amplifiers claiming that the solid-state and digital counterparts could never provide the same "warmth" (3). The term traveling-wave tube includes both fast-wave and slow-wave devices. This article will concentrate on slow-wave devices as the vast majority of TWTs in operation fall into this category.

Brazing open cell reticulated copper foam to stainless steel tubing with vacuum furnace brazed gold/indium alloy plating

DOEpatents

Howard, Stanley R [Windsor, SC; Korinko, Paul S [Aiken, SC

2008-05-27

A method of fabricating a heat exchanger includes brush electroplating plated layers for a brazing alloy onto a stainless steel tube in thin layers, over a nickel strike having a 1.3 .mu.m thickness. The resultant Au-18 In composition may be applied as a first layer of indium, 1.47 .mu.m thick, and a second layer of gold, 2.54 .mu.m thick. The order of plating helps control brazing erosion. Excessive amounts of brazing material are avoided by controlling the electroplating process. The reticulated copper foam rings are interference fit to the stainless steel tube, and in contact with the plated layers. The copper foam rings, the plated layers for brazing alloy, and the stainless steel tube are heated and cooled in a vacuum furnace at controlled rates, forming a bond of the copper foam rings to the stainless steel tube that improves heat transfer between the tube and the copper foam.

Vacuum-and-solvent-free fabrication of organic semiconductor layers for field-effect transistors

PubMed Central

Matsushima, Toshinori; Sandanayaka, Atula S. D.; Esaki, Yu; Adachi, Chihaya

2015-01-01

We demonstrate that cold and hot isostatic pressing (CIP and HIP) is a novel, alternative method for organic semiconductor layer fabrication, where organic powder is compressed into a layer shape directly on a substrate with 200 MPa pressure. Spatial gaps between powder particles and the other particles, substrates, or electrodes are crushed after CIP and HIP, making it possible to operate organic field-effect transistors (OFETs) containing the compressed powder as the semiconductor. The CIP-compressed powder of 2,7-dioctyl[1]benzothieno[3,2-b][1]benzothiophene (C8-BTBT) had a hole mobility of (1.6 ± 0.4) × 10–2 cm2/Vs. HIP of C8-BTBT powder increased the hole mobility to an amorphous silicon-like value (0.22 ± 0.07 cm2/Vs) because of the growth of the C8-BTBT crystallites and the improved continuity between the powder particles. The vacuum and solution processes are not involved in our CIP and HIP techniques, offering a possibility of manufacturing OFETs at low cost. PMID:26416434

Vacuum ultraviolet radiation effects on two-dimensional MoS2 field-effect transistors

NASA Astrophysics Data System (ADS)

McMorrow, Julian J.; Cress, Cory D.; Arnold, Heather N.; Sangwan, Vinod K.; Jariwala, Deep; Schmucker, Scott W.; Marks, Tobin J.; Hersam, Mark C.

2017-02-01

Atomically thin MoS2 has generated intense interest for emerging electronics applications. Its two-dimensional nature and potential for low-power electronics are particularly appealing for space-bound electronics, motivating the need for a fundamental understanding of MoS2 electronic device response to the space radiation environment. In this letter, we quantify the response of MoS2 field-effect transistors (FETs) to vacuum ultraviolet (VUV) total ionizing dose radiation. Single-layer (SL) and multilayer (ML) MoS2 FETs are compared to identify differences that arise from thickness and band structure variations. The measured evolution of the FET transport properties is leveraged to identify the nature of VUV-induced trapped charge, isolating the effects of the interface and bulk oxide dielectric. In both the SL and ML cases, oxide trapped holes compete with interface trapped electrons, exhibiting an overall shift toward negative gate bias. Raman spectroscopy shows no variation in the MoS2 signatures as a result of VUV exposure, eliminating significant crystalline damage or oxidation as possible radiation degradation mechanisms. Overall, this work presents avenues for achieving radiation-hard MoS2 devices through dielectric engineering that reduces oxide and interface trapped charge.

Literature search for ceramic vacuum tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cannon, W.

1977-01-12

The NTIS and Engineering Index files were searched for citations relating to Ceramic and/or Metal Electron Tubes and High Temperature Electronics. A total of 24 citations were found relating directly to ceramic tubes and 24 to high temperature electronics. A search for electron tubes in general was examined for high temperature applications and 39 were obtained. Computer printouts of the abstracts are included in appendices. (MHR)

Use of a holder-vacuum tube device to save on-site hands in preparing urine samples for head-space gas-chromatography, and its application to determine the time allowance for sample sealing.

PubMed

Kawai, Toshio; Sumino, Kimiaki; Ohashi, Fumiko; Ikeda, Masayuki

2011-01-01

To facilitate urine sample preparation prior to head-space gas-chromatographic (HS-GC) analysis. Urine samples containing one of the five solvents (acetone, methanol, methyl ethyl ketone, methyl isobutyl ketone and toluene) at the levels of biological exposure limits were aspirated into a vacuum tube via holder, a device commercially available for venous blood collection (the vacuum tube method). The urine sample, 5 ml, was quantitatively transferred to a 20-ml head-space vial prior to HS-GC analysis. The loaded tubes were stored at +4 ℃ in dark for up to 3 d. The vacuum tube method facilitated on-site procedures of urine sample preparation for HS-GC with no significant loss of solvents in the sample and no need of skilled hands, whereas on-site sample preparation time was significantly reduced. Furthermore, no loss of solvents was detected during the 3-d storage, irrespective of hydrophilic (acetone) or lipophilic solvent (toluene). In a pilot application, high performance of the vacuum tube method in sealing a sample in an air-tight space succeeded to confirm that no solvent will be lost when sealing is completed within 5 min after urine voiding, and that the allowance time is as long as 30 min in case of toluene in urine. The use of the holder-vacuum tube device not only saves hands for transfer of the sample to air-tight space, but facilitates sample storage prior to HS-GC analysis.

Electrical system for measurement of breakdown voltage of vacuum and gas-filled tubes using a dynamic method

NASA Astrophysics Data System (ADS)

Pejović, Milić M.; Milosavljević, Čedomir S.; Pejović, Momčilo M.

2003-06-01

This article describes an electrical system aimed at measuring and data acquisition of breakdown voltages of vacuum and gas-filled tubes. The measurements were performed using a nitrogen-filled tube at 4 mbar pressure. Based on the measured breakdown voltage data as a function of the applied voltage increase rate, a static breakdown voltage is estimated for the applied voltage gradient ranging from 0.1 to 1 V s-1 and from 1 to 10 V s-1. The histograms of breakdown voltages versus applied voltage increase rates from 0.1 and 0.5 V s-1 are approximated by the probability density functions using a fitting procedure.

TUBE TESTER

DOEpatents

Gittings, H.T. Jr.; Kalbach, J.F.

1958-01-14

This patent relates to tube testing, and in particular describes a tube tester for automatic testing of a number of vacuum tubes while in service and as frequently as may be desired. In it broadest aspects the tube tester compares a particular tube with a standard tube tarough a difference amplifier. An unbalanced condition in the circuit of the latter produced by excessive deviation of the tube in its characteristics from standard actuates a switch mechanism stopping the testing cycle and indicating the defective tube.

Fermionic vacuum polarization by an Abelian magnetic tube in the cosmic string spacetime

NASA Astrophysics Data System (ADS)

Maior de Sousa, M. S.; Ribeiro, R. F.; Bezerra de Mello, E. R.

2017-02-01

In this paper, we consider a charged massive fermionic quantum field in the idealized cosmic string spacetime and in the presence of a magnetic field confined in a cylindrical tube of finite radius. Three distinct configurations for the magnetic fields are taken into account: (i) a cylindrical shell of radius a , (ii) a magnetic field proportional to 1 /r , and (iii) a constant magnetic field. In these three cases, the axis of the infinitely long tube of radius a coincides with the cosmic string. Our main objectives in this paper are to analyze the fermionic condensate (FC) and the vacuum expectation value (VEV) of the fermionic energy-momentum tensor. In order to do that, we explicitly construct the complete set of normalized wave functions for each configuration of the magnetic field. We show that in the region outside the tube, the FC and the VEV of the energy-momentum tensor are decomposed into two parts: The first ones correspond to the zero-thickness magnetic flux contributions, and the second ones are induced by the nontrivial structure of the magnetic field, named core-induced contributions. The latter present specific forms depending on the magnetic field configuration considered. We also show that the VEV of the energy-momentum tensor is diagonal and obeys the conservation condition, and its trace is expressed in terms of the fermionic condensate. The zero-thickness contributions to the FC and VEV of the energy-momentum tensor depend only on the fractional part of the ration of the magnetic flux inside the tube by the quantum one. As to the core-induced contributions, they depend on the total magnetic flux inside the tube and, consequently, in general, are not a periodic function of the magnetic flux.

Ambipolar pentacene field-effect transistor with double-layer organic insulator

NASA Astrophysics Data System (ADS)

Kwak, Jeong-Hun; Baek, Heume-Il; Lee, Changhee

2006-08-01

Ambipolar conduction in organic field-effect transistor is very important feature to achieve organic CMOS circuitry. We fabricated an ambipolar pentacene field-effect transistors consisted of gold source-drain electrodes and double-layered PMMA (Polymethylmethacrylate) / PVA (Polyvinyl Alcohol) organic insulator on the ITO(Indium-tin-oxide)-patterned glass substrate. These top-contact geometry field-effect transistors were fabricated in the vacuum of 10 -6 Torr and minimally exposed to atmosphere before its measurement and characterized in the vacuum condition. Our device showed reasonable p-type characteristics of field-effect hole mobility of 0.2-0.9 cm2/Vs and the current ON/OFF ratio of about 10 6 compared to prior reports with similar configurations. For the n-type characteristics, field-effect electron mobility of 0.004-0.008 cm2/Vs and the current ON/OFF ratio of about 10 3 were measured, which is relatively high performance for the n-type conduction of pentacene field-effect transistors. We attributed these ambipolar properties mainly to the hydroxyl-free PMMA insulator interface with the pentacene active layer. In addition, an increased insulator capacitance due to double-layer insulator structure with high-k PVA layer also helped us to observe relatively good n-type characteristics.

Removable Mandrels For Vacuum-Plasma-Spray Forming

NASA Technical Reports Server (NTRS)

Krotz, Phillip D.; Davis, William M.; Power, Christopher A.; Woodford, William H.; Todd, Douglas M.; Liaw, Yoon K.; Holmes, Richard R.; Zimmerman, Frank R.; Mckechnie, Timothy N.

1995-01-01

Improved mandrels developed for use in vacuum-plasma-spray (VPS) forming of refractory metal and ceramic furnace cartridge tubes. Designed so after tubes formed on them by VPS, mandrels shrink away from tubes upon cooling back to room temperature and simply slip out of tube.

Failure analysis of glass-ceramic insulators of shock tested vacuum (neutron) tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Spears, R.K.

1980-08-25

Eight investigative techniques were used to examine the glass-ceramic insulators in vacuum (neutron) tubes. The insulators were extracted from units that had been subjected to low temperature mechanical shock tests. Two of the three units showed reduced neutron output after these tests and an insulator on one of these two was cracked completely through which probably occurred during shock testing. The objective of this study was to determine if any major differences existed between the insulators of these tubes. After eight analyses, it was concluded that no appreciable differences existed. It appeared that cracking of the one glass-ceramic sample wasmore » initiated at inner-sleeve interface voids. For this sample, the interface void density was much higher than is presently acceptable. All insulators were made with glass-ceramic having a Na/sub 2/O content of 4.6 wt%. An increased Na/sub 2/O content will cause an increase in the coefficient of expansion and will reduce the residual stress level since the molybdenum has a higher coefficient of thermal expansion than the insulator. Thus, it is believed that a decrease in interface voids and an increase in Na/sub 2/O should aid in reduced cracking of the insulator during these tests.« less

Electron dynamics inside a vacuum tube diode through linear differential equations

NASA Astrophysics Data System (ADS)

González, Gabriel; Orozco, Fco. Javier González; Orozco

2014-04-01

In this paper we analyze the motion of charged particles in a vacuum tube diode by solving linear differential equations. Our analysis is based on expressing the volume charge density as a function of the current density and coordinates only, i.e. ρ=ρ(J,z), while in the usual scheme the volume charge density is expressed as a function of the current density and electrostatic potential, i.e. ρ=ρ(J,V). We show that, in the case of slow varying charge density, the space-charge-limited current is reduced up to 50%. Our approach gives the well-known behavior of the classical current density proportional to the three-halves power of the bias potential and inversely proportional to the square of the gap distance between electrodes, and does not require the solution of the nonlinear differential equation normally associated with the Child-Langmuir formulation.

Proof of feasibility of the Vacuum Silicon PhotoMultiplier Tube (VSiPMT)

NASA Astrophysics Data System (ADS)

Barbarino, G.; Campajola, L.; de Asmundis, R.; De Rosa, G.; Fiorillo, G.; Migliozzi, P.; Barbato, F. C. T.; Mollo, C. M.; Russo, A.; Vivolo, D.

2013-04-01

The Vacuum Silicon PhotoMultiplier Tube (VSiPMT) is an innovative design we propose for a modern hybrid photodetector based on the combination of a Silicon PhotoMultiplier (SiPM) with a hemispherical vacuum glass PMT standard envelope. The basic idea is to replace the classical dynode chain of a PMT with a SiPM, which acts as an electron multiplying detector. Such a solution will match the goal of a large photocathode sensitive area with the performances of a SiPM. This will lead to many advantages such as lower power consumption, mild sensitivity to magnetic fields and high quantum efficiency. The feasibility of this idea has been throughly studied both from a theoretical and experimental point of view. As a first step we performed the full characterization of a special non-windowed Hamamatsu MPPC with a laser source. The response of the SiPM to an electron beam was studied as a function of the energy and of the incident angle by means of a Geant4-based simulation. In this paper we present the preliminary results of the characterization of the SiPM with an electron source and we discuss how the development of next generation SiPMs will overcome the main weaknesses of VSiPMT, such as relatively low PDE and high photocathode voltage.

2016 Summer Series - Jin-Woo Han: Vacuum Electronics in a Nanometer Era

NASA Image and Video Library

2016-06-07

Modern space vehicles rely on transistors. Radiation tolerance of space electronics is critical for space exploration beyond low Earth orbit. NASA Ames Research Center is investigating ways to overcome this issue using vacuums. Dr. Jin-Woo Han's lecture will present advancements in the use of vacuums to improve radiation immunity in space circuitry.

Phase Formation and Superconductivity of Fe-TUBE Encapsulated and Vacuum-Annealed MgB2

NASA Astrophysics Data System (ADS)

Singh, K. P.; Awana, V. P. S.; Shahabuddin, Md.; Husain, M.; Saxena, R. B.; Nigam, Rashmi; Ansari, M. A.; Gupta, Anurag; Narayan, Himanshu; Halder, S. K.; Kishan, H.

We report optimization of the synthesis parameters viz. heating temperature (TH), and hold time (thold) for vacuum-annealed (10-5 Torr) and LN2 (liquid nitrogen) quenched MgB2 compound. These are single-phase compounds crystallizing in the hexagonal structure (space group P6/mmm) at room temperature. Our XRD results indicated that for phase-pure MgB2, the TH for 10-5 Torr annealed and LN2-quenched samples is 750°C. The right stoichiometry i.e., MgB2 of the compound corresponding to 10-5 Torr and TH of 750°C is found for the hold time (thold) of 2.30 hours. With varying thold from 1-4 hours at fixed TH (750°C) and vacuum (10-5 Torr), the c-lattice parameter decreases first and later increases with thold (hours) before a near saturation, while the a-lattice parameter first increases and later decreases beyond a thold of 2.30 hours. The c/a ratio versus thold plot showed an inverted bell-shaped curve, touching the lowest value of 1.141, which is the reported value for perfect stoichiometry of MgB2. The optimized stoichimetric MgB2 compound exhibited superconductivity at 39.2 K with a transition width of 0.6 K. In conclusion, the synthesis parameters for phase pure stoichimetric vacuum-annealed MgB2 compound are optimized and are compared with widely-reported Ta tube encapsulated samples.

Relation between acid dissolution time in the vacuum test tube and time required for graphitization for AMS target preparation

NASA Astrophysics Data System (ADS)

Yokoyama, Yusuke; Miyairi, Yousuke; Matsuzaki, Hiroyuki; Tsunomori, Fumiaki

2007-06-01

Availability of an effective graphitization system is essential for the successful operation of an AMS laboratory for radiocarbon measurements. We have set up a graphitization system consisting of metal vacuum lines for cleaning CO2 sample gas which is then converted to graphite. CO2 gas from a carbonate sample is produced in vacuum in a test tube by injecting concentrated phosphoric acid. The tube is placed into a heated metal block to accelerate dissolution. However, we have observed systematic differences in the time required to convert the CO2 gas to graphite under a hydrogen atmosphere, from less than 3 h to over 10 h. We have conducted a series of experiments including background measurements and yield measurements to monitor secondary carbon contamination and changes in isotopic fractionation. All of the tests show that the carbon isotope ratios remain unaffected by the duration of the process. We also used a quadrupole mass spectrometer (QMS) to identify possible contaminant gases. Contaminant peaks were identified at high mass (larger than 60) only for long duration experiments. This suggests a possible reaction between the rubber cap and acid fumes producing a contaminant gas that impeded the reduction of CO2.

Patterned Liquid Metal Contacts for Printed Carbon Nanotube Transistors.

PubMed

Andrews, Joseph B; Mondal, Kunal; Neumann, Taylor V; Cardenas, Jorge A; Wang, Justin; Parekh, Dishit P; Lin, Yiliang; Ballentine, Peter; Dickey, Michael D; Franklin, Aaron D

2018-05-14

Flexible and stretchable electronics are poised to enable many applications that cannot be realized with traditional, rigid devices. One of the most promising options for low-cost stretchable transistors are printed carbon nanotubes (CNTs). However, a major limiting factor in stretchable CNT devices is the lack of a stable and versatile contact material that forms both the interconnects and contact electrodes. In this work, we introduce the use of eutectic gallium-indium (EGaIn) liquid metal for electrical contacts to printed CNT channels. We analyze thin-film transistors (TFTs) fabricated using two different liquid metal deposition techniques-vacuum-filling polydimethylsiloxane (PDMS) microchannel structures and direct-writing liquid metals on the CNTs. The highest performing CNT-TFT was realized using vacuum-filled microchannel deposition with an in situ annealing temperature of 150 °C. This device exhibited an on/off ratio of more than 10 4 and on-currents as high as 150 μA/mm-metrics that are on par with other printed CNT-TFTs. Additionally, we observed that at room temperature the contact resistances of the vacuum-filled microchannel structures were 50% lower than those of the direct-write structures, likely due to the poor adhesion between the materials observed during the direct-writing process. The insights gained in this study show that stretchable electronics can be realized using low-cost and solely solution processing techniques. Furthermore, we demonstrate methods that can be used to electrically characterize semiconducting materials as transistors without requiring elevated temperatures or cleanroom processes.

Flexible, Carbon-Based Ohmic Contacts for Organic Transistors

NASA Technical Reports Server (NTRS)

Brandon, Erik

2005-01-01

A low-temperature process for fabricating flexible, ohmic contacts for use in organic thin-film transistors (OTFTs) has been developed. Typical drainsource contact materials used previously for OTFTs include (1) vacuum-deposited noble-metal contacts and (2) solution-deposited intrinsically conducting molecular or polymeric contacts. Both of these approaches, however, have serious drawbacks.

Development of vacuum ultraviolet absorption spectroscopy system for wide measurement range of number density using a dual-tube inductively coupled plasma light source

NASA Astrophysics Data System (ADS)

Kuwahara, Akira; Matsui, Makoto; Yamagiwa, Yoshiki

2012-12-01

A vacuum ultraviolet absorption spectroscopy system for a wide measurement range of atomic number densities is developed. Dual-tube inductively coupled plasma was used as a light source. The probe beam profile was optimized for the target number density range by changing the mass flow rate of the inner and outer tubes. This system was verified using cold xenon gas. As a result, the measurement number density range was extended from the conventional two orders to five orders of magnitude.

Microfabricated Millimeter-Wave High-Power Vacuum Electronic Amplifiers

DTIC Science & Technology

2015-01-01

Applications filed 2012). In spite of the challenges, high power sources of electromagnetic radiation are needed in the mmW bands for advanced DoD...Research Laboratory is demonstrating and developing millimeter-wave vacuum electronic traveling wave tube amplifiers at W- and G- band in the 10’ s to 100... s of watts power range at several percent instantaneous bandwidth. Keywords: Traveling wave tube; millimeter wave; vacuum electron device

Air bearing vacuum seal assembly

DOEpatents

Booth, Rex

1978-01-01

An air bearing vacuum seal assembly capable of rotating at the speed of several thousand revolutions per minute using an air cushion to prevent the rotating and stationary parts from touching, and a two stage differential pumping arrangement to maintain the pressure gradient between the air cushion and the vacuum so that the leak rate into the vacuum is, for example, less than 1 .times. 10.sup.-4 Pa m.sup.3 /s. The air bearing vacuum seal has particular application for mounting rotating targets to an evacuated accelerator beam tube for bombardment of the targets with high-power charged particle beams in vacuum.

Electron tube

DOEpatents

Suyama, Motohiro [Hamamatsu, JP; Fukasawa, Atsuhito [Hamamatsu, JP; Arisaka, Katsushi [Los Angeles, CA; Wang, Hanguo [North Hills, CA

2011-12-20

An electron tube of the present invention includes: a vacuum vessel including a face plate portion made of synthetic silica and having a surface on which a photoelectric surface is provided, a stem portion arranged facing the photoelectric surface and made of synthetic silica, and a side tube portion having one end connected to the face plate portion and the other end connected to the stem portion and made of synthetic silica; a projection portion arranged in the vacuum vessel, extending from the stem portion toward the photoelectric surface, and made of synthetic silica; and an electron detector arranged on the projection portion, for detecting electrons from the photoelectric surface, and made of silicon.

Feed-through connector couples RF power into vacuum chamber

NASA Technical Reports Server (NTRS)

Grandy, G. L.

1967-01-01

Feed-through device connects RF power to an RF coil in a vacuum chamber. The coil and leads are water cooled and vacuum tight seals are provided at the junctions. The device incorporates silver soldered copper tubes, polytetrafluoroethylene electrical insulators, and O-ring vacuum seals.

On the temporal development of erythrocyte sedimentation rate using sealed vacuum tubes.

PubMed

Kallner, A

1991-07-01

The temporal development of the erythrocyte sedimentation rate (ESR) was studied in wide, short vacuum tubes. It was found that in about 3% of the specimens arriving in the laboratory the ESR developed in three different phases during 60 min, whereas the other showed only two. The specimens with three phases behaved similarly in the Westergren method. It was shown that the Westergren ESR can be estimated with an acceptable accuracy already from measurements obtained after 30 min. Reproducibility and precision were improved by using a special instrument. Several advantages by this procedure were recognized, e.g., quicker results, identification of several otherwise missed rapid ESR. Accurate timing of the readings further improves accuracy and precision, and permits estimation of ESR (Westergren) up to 100 mm. In view of the obvious phases in the development of the ESR, it is proposed that this abbreviation is interpreted as erythrocyte sedimentation reaction and that the kind of quantity that is length is expressed in mm.

Balancing Hole and Electron Conduction in Ambipolar Split-Gate Thin-Film Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Lee, Dong-Kyu; Smits, Edsger C P; Gelinck, Gerwin H; Ahn, Hyungju; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2017-07-10

Complementary organic electronics is a key enabling technology for the development of new applications including smart ubiquitous sensors, wearable electronics, and healthcare devices. High-performance, high-functionality and reliable complementary circuits require n- and p-type thin-film transistors with balanced characteristics. Recent advancements in ambipolar organic transistors in terms of semiconductor and device engineering demonstrate the great potential of this route but, unfortunately, the actual development of ambipolar organic complementary electronics is currently hampered by the uneven electron (n-type) and hole (p-type) conduction in ambipolar organic transistors. Here we show ambipolar organic thin-film transistors with balanced n-type and p-type operation. By manipulating air exposure and vacuum annealing conditions, we show that well-balanced electron and hole transport properties can be easily obtained. The method is used to control hole and electron conductions in split-gate transistors based on a solution-processed donor-acceptor semiconducting polymer. Complementary logic inverters with balanced charging and discharging characteristics are demonstrated. These findings may open up new opportunities for the rational design of complementary electronics based on ambipolar organic transistors.

Sugar maple sap volume increases as vacuum level is increased

Treesearch

Russell S. Walters; H. Clay Smith

1975-01-01

Maple sap yields collected by using plastic tubing with a vacuum pump increased as the vacuum level was increased. Sap volumes collected at the 10- and 15-inch mercury vacuum levels were statistically significantly higher than volumes collected at the 5-inch level. Although the 15-inch vacuum yielded more sap than the 10-inch vacuum, the difference was not...

A quantum optical transistor with a single quantum dot in a photonic crystal nanocavity.

PubMed

Li, Jin-Jin; Zhu, Ka-Di

2011-02-04

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to a photonic crystal nanocavity. This provides an important clue towards the realization of a quantum optical transistor. Using experimentally realistic parameters, in this work, theoretical analysis shows that such a quantum optical transistor can be switched on or off by turning on or off the pump laser, which corresponds to attenuation or amplification of the probe laser, respectively. Furthermore, based on this quantum optical transistor, an all-optical measurement of the vacuum Rabi splitting is also presented. The idea of associating a quantum optical transistor with this coupled QD-nanocavity system may achieve images of light controlling light in all-optical logic circuits and quantum computers.

A fixed tilt solar collector employing reversible vee-trough reflectors and vacuum tube receivers for solar heating and cooling systems

NASA Technical Reports Server (NTRS)

Selcuk, M. K.

1977-01-01

The usefulness of vee-trough concentrators in improving the efficiency and reducing the cost of collectors assembled from evacuated tube receivers was studied in the vee-trough/vacuum tube collector (VTVTC) project. The VTVTC was analyzed rigorously and various mathematical models were developed to calculate the optical performance of the vee-trough concentrator and the thermal performance of the evacuated tube receiver. A test bed was constructed to verify the mathematical analyses and compare reflectors made out of glass, Alzak and aluminized FEP Teflon. Tests were run at temperatures ranging from 95 to 180 C. Vee-trough collector efficiencies of 35 to 40% were observed at an operating temperature of about 175 C. Test results compared well with the calculated values. Predicted daily useful heat collection and efficiency values are presented for a year's duration of operation temperatures ranging from 65 to 230 C. Estimated collector costs and resulting thermal energy costs are presented. Analytical and experimental results are discussed along with a complete economic evaluation.

Electron-emission characteristics of tungsten alloys: Mee 492. [No data; plasma anode tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Moon, H.M.

A plasma-anode tube was constructed to investigate the electron-emission characteristics for rhenium, 1% thorium tungsten, and 2% thorium tungsten. The tube consists of cathode, anode, cesium reservoir, and three probes. Inside of tube is a rough vacuum by using a Varian liquid-nitrogen-cooled cryovalve and further vacuum by using a Varian absorption pumpt to 4 X IO/sup -5/ pa. The tube was sealed off from the vacuum pump after the cesium ampoule was broken. The entire plasma-anode tube except the cesiunm reservoir was placed in a Blue M Electric Company furnace whose door had been modified to permit viewing of themore » tube.« less

Analysis, development and testing of a fixed tilt solar collector employing reversible Vee-Trough reflectors and vacuum tube receivers

NASA Technical Reports Server (NTRS)

Selcuk, M. K.

1979-01-01

The Vee-Trough/Vacuum Tube Collector (VTVTC) aimed to improve the efficiency and reduce the cost of collectors assembled from evacuated tube receivers. The VTVTC was analyzed rigorously and a mathematical model was developed to calculate the optical performance of the vee-trough concentrator and the thermal performance of the evacuated tube receiver. A test bed was constructed to verify the mathematical analyses and compare reflectors made out of glass, Alzak and aluminized GEB Teflon. Tests were run at temperatures ranging from 95 to 180 C during the months of April, May, June, July and August 1977. Vee-trough collector efficiencies of 35-40 per cent were observed at an operating temperature of about 175 C. Test results compared well with the calculated values. Test data covering a complete day are presented for selected dates throughout the test season. Predicted daily useful heat collection and efficiency values are presented for a year's duration at operation temperatures ranging from 65 to 230 C. Estimated collector costs and resulting thermal energy costs are presented. Analytical and experimental results are discussed along with an economic evaluation.

Thermal Gradient During Vacuum-Deposition Dramatically Enhances Charge Transport in Organic Semiconductors: Toward High-Performance N-Type Organic Field-Effect Transistors.

PubMed

Kim, Joo-Hyun; Han, Singu; Jeong, Heejeong; Jang, Hayeong; Baek, Seolhee; Hu, Junbeom; Lee, Myungkyun; Choi, Byungwoo; Lee, Hwa Sung

2017-03-22

A thermal gradient distribution was applied to a substrate during the growth of a vacuum-deposited n-type organic semiconductor (OSC) film prepared from N,N'-bis(2-ethylhexyl)-1,7-dicyanoperylene-3,4:9,10-bis(dicarboxyimide) (PDI-CN2), and the electrical performances of the films deployed in organic field-effect transistors (OFETs) were characterized. The temperature gradient at the surface was controlled by tilting the substrate, which varied the temperature one-dimensionally between the heated bottom substrate and the cooled upper substrate. The vacuum-deposited OSC molecules diffused and rearranged on the surface according to the substrate temperature gradient, producing directional crystalline and grain structures in the PDI-CN2 film. The morphological and crystalline structures of the PDI-CN2 thin films grown under a vertical temperature gradient were dramatically enhanced, comparing with the structures obtained from either uniformly heated films or films prepared under a horizontally applied temperature gradient. The field effect mobilities of the PDI-CN2-FETs prepared using the vertically applied temperature gradient were as high as 0.59 cm 2 V -1 s -1 , more than a factor of 2 higher than the mobility of 0.25 cm 2 V -1 s -1 submitted to conventional thermal annealing and the mobility of 0.29 cm 2 V -1 s -1 from the horizontally applied temperature gradient.

Printable Top-Gate-Type Polymer Light-Emitting Transistors with Surfaces of Amorphous Fluoropolymer Insulators Modified by Vacuum Ultraviolet Light Treatment

NASA Astrophysics Data System (ADS)

Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke; Ikezoe, Ikuya; Ohmori, Yutaka

2013-04-01

We investigated the fabrication and electrical and optical properties of top-gate-type polymer light-emitting transistors with the surfaces of amorphous fluoropolymer insulators, CYTOP (Asahi Glass) modified by vacuum ultraviolet light (VUV) treatment. The surface energy of CYTOP, which has a good solution barrier property was increased by VUV irradiation, and the gate electrode was fabricated by solution processing on the CYTOP film using the Ag nano-ink. The influence of VUV irradiation on the optical properties of poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) films with various gate insulators was investigated to clarify the passivation effect of gate insulators. It was found that the poly(methyl methacrylate) (PMMA) film prevented the degradation of the F8BT layer under VUV irradiation because the PMMA film can absorb VUV. The solution-processed F8BT device with multilayer PMMA/CYTOP insulators utilizing a gate electrode fabricated using the Ag nano-ink exhibited both the ambipolar characteristics and yellow-green emission.

Phase-locked loop based on nanoelectromechanical resonant-body field effect transistor

NASA Astrophysics Data System (ADS)

Bartsch, S. T.; Rusu, A.; Ionescu, A. M.

2012-10-01

We demonstrate the room-temperature operation of a silicon nanoelectromechanical resonant-body field effect transistor (RB-FET) embedded into phase-locked loop (PLL). The very-high frequency resonator uses on-chip electrostatic actuation and transistor-based displacement detection. The heterodyne frequency down-conversion based on resistive FET mixing provides a loop feedback signal with high signal-to-noise ratio. We identify key parameters for PLL operation, and analyze the performance of the RB-FET at the system level. Used as resonant mass detector, the experimental frequency stability in the ppm-range translates into sub atto-gram (10-18 g) sensitivity in high vacuum. The feedback and control system are generic and may be extended to other mechanical resonators with transistor properties, such as graphene membranes and carbon nanotubes.

First results of performance tests of the newly designed Vacuum Silicon Photo Multiplier Tube (VSiPMT).

NASA Astrophysics Data System (ADS)

de Asmundis, R.; Barbarino, G.; Barbato, F. C. T.; Campajola, L.; De Rosa, G.; Fiorillo, G.; Migliozzi, P.; Mollo, C. M.; Rossi, B.; Vivolo, D.

2014-04-01

We invented (2007) the VSiPMT, a novel, high-gain, photo detector device and we publically proposed this idea in an International Conference for the first time at the 11th Topical Seminar on Innovative Particle and Radiation Detectors (IPRD08) in Siena, triggering deep discussions on the feasibility of the device itself and on the convenience of such a solution. After several years spent in designing, evaluation, tests and eventually negotiations with some suppliers, we finally got a couple of prototypes of the Vacuum Silicon Photo Multiplier Tube (VSiPMT) made under our specifications by Hamamatsu. We present in this paper the most important results of characterization tests of the first prototypes of the VSiPMT.

Correlation between active layer thickness and ambient gas stability in IGZO thin-film transistors

NASA Astrophysics Data System (ADS)

Gao, Xu; Lin, Meng-Fang; Mao, Bao-Hua; Shimizu, Maki; Mitoma, Nobuhiko; Kizu, Takio; Ou-Yang, Wei; Nabatame, Toshihide; Liu, Zhi; Tsukagoshi, Kazuhito; Wang, Sui-Dong

2017-01-01

Decreasing the active layer thickness has been recently reported as an alternative way to achieve fully depleted oxide thin-film transistors for the realization of low-voltage operations. However, the correlation between the active layer thickness and device resistivity to environmental changes is still unclear, which is important for the optimized design of oxide thin-film transistors. In this work, the ambient gas stability of IGZO thin-film transistors is found to be strongly correlated to the IGZO thickness. The TFT with the thinnest IGZO layer shows the highest intrinsic electron mobility in a vacuum, which is greatly reduced after exposure to O2/air. The device with a thick IGZO layer shows similar electron mobility in O2/air, whereas the mobility variation measured in the vacuum is absent. The thickness dependent ambient gas stability is attributed to a high-mobility region in the IGZO surface vicinity with less sputtering-induced damage, which will become electron depleted in O2/air due to the electron transfer to adsorbed gas molecules. The O2 adsorption and deduced IGZO surface band bending is demonstrated by the ambient-pressure x-ray photoemission spectroscopy results.

Carbon Nanotube Vacuum Gauges Utilizing Long, Dissipative Tubes

NASA Technical Reports Server (NTRS)

Kaul, Anupama B.; Manohara, Harish M.

2008-01-01

CNT Vacuum Gauges: a) have a broad range of pressure response from 760 - 10(exp -6) Torr. b) have current changes approx. 100's nA in high vacuum regime (10(exp -6) Torr) and sensitivity increases with power and substrate removal. c) have a negative dR/dT (TCR negative) where a thermal hopping energy E(sub a) was determined to be approx. 40 meV. d) have compatible fabrication requirements for their integration with micromachined structures. e) can be operated at low power (nW - micro-W). f) have an active device region footprint of < 10 sq microns. g) are non-intrusive due to small size and passive operation.

Advances in electrometer vacuum tube design

NASA Technical Reports Server (NTRS)

1970-01-01

Single-ended, miniature-cathode tube with a relatively low grid current level is constructed. Adequate cathode temperature at relatively low heater power drain is provided by designing the supporting spacers to provide a square cathode hole. Method of assembling the mount and bonding the elements is discussed.

Tube Failure Mechanisms.

DTIC Science & Technology

studies will be made: ( a ) An investigation of the factors influencing electrical breakdown in a vacuum and across the surface of a dielectric. (b) An...The purpose of this program is to investigate the nature and the principal causes of failures in microwave tubes. In this context, the following...investigation of the various electrical and surface properties of materials commonly used in microwave tubes, i.e., OFHC copper, alumina ceramic, tungsten

Vacuum-assisted venous return reduces blood usage.

PubMed

Banbury, Michael K; White, Jennifer A; Blackstone, Eugene H; Cosgrove, Delos M

2003-09-01

To determine whether vacuum-assisted venous return has clinical advantages over conventional gravity drainage apart from allowing the use of smaller cannulas and shorter tubing. A total of 150 valve operations were performed at our institution between February and July 1999 using vacuum-assisted venous return with small venous cannulas connected to short tubing. These were compared with (1) 83 valve operations performed between April 1997 and January 1998 using the initial version of vacuum-assisted venous return, and (2) 124 valve operations performed between January and April of 1997 using conventional gravity drainage. Priming volume, hematocrit value, red blood cell usage, and total blood product usage were compared multivariably. These comparisons were covariate and propensity adjusted for dissimilarities between the groups and confirmed by propensity-matched pairs analysis. Priming volume was 1.4 +/- 0.4 L for small-cannula vacuum-assisted venous return, 1.7 +/- 0.4 L for initial vacuum-assisted venous return, and 2.0 +/- 0.4 L for gravity drainage (P <.0001). Smaller priming resulted in higher hematocrit values both at the beginning of cardiopulmonary bypass (27% +/- 5% compared with 26% +/- 4% and 25% +/- 4%, respectively, P <.0001) and at the end (30% +/- 4% compared with 28% +/- 4% and 27% +/- 4%, respectively, P <.0001). Red cell transfusions were used in 17% of the patients having small-cannula vacuum-assisted venous return, 27% of the initial patients having vacuum-assisted venous return, and 37% of the patients having gravity drainage (P =.001); total blood product usage was 19%, 27%, and 39%, respectively (P =.002). Although ministernotomy also was associated with reduced blood product usage (P <.004), propensity matching on type of sternotomy confirmed the association of vacuum-assisted venous return with lowered blood product usage. Vacuum-assisted venous return results in (1) higher hematocrit values during cardiopulmonary bypass and (2) decreased

Physical property characterization of Fe-tube encapsulated and vacuum annealed bulk MgB 2

NASA Astrophysics Data System (ADS)

Awana, V. P. S.; Rawat, Rajeev; Gupta, Anurag; Isobe, M.; Singh, K. P.; Vajpayee, Arpita; Kishan, H.; Takayama-Muromachi, E.; Narlikar, A. V.

2006-08-01

We report the phase formation, and present a detailed study of magnetization and resistivity under magnetic field of MgB 2 polycrystalline bulk samples prepared by the Fe-tube encapsulated and vacuum (10 -5 Torr) annealed (750 ∘C) route. Zero-field-cooled magnetic susceptibility (χ) measurements exhibited a sharp transition to the superconducting state with a sizeable diamagnetic signal at 39 K (Tc). The measured magnetization loops of the samples, despite the presence of flux jumps, exhibited a stable current density (Jc) of around 2.4×10 5 A/cm 2 in up to 2 T (Tesla) field and at temperatures (T) up to 10 K. The upper critical field is estimated from resistivity measurements in various fields and shows a typical value of 8 T at 21 K. Further, χ measurements at an applied field of 0.1 T reveal a paramagnetic Meissner effect (PME) that is briefly discussed.

Effect of fabrication parameters on coating properties of tubular solid oxide fuel cell electrolyte prepared by vacuum slurry coating

NASA Astrophysics Data System (ADS)

Son, Hui-Jeong; Song, Rak-Hyun; Lim, Tak-Hyoung; Lee, Seung-Bok; Kim, Sung-Hyun; Shin, Dong-Ryul

The process of vacuum slurry coating for the fabrication of a dense and thin electrolyte film on a porous anode tube is investigated for application in solid oxide fuel cells. 8 mol% yttria stabilized zirconia is coated on an anode tube by vacuum slurry-coating process as a function of pre-sintering temperature of the anode tube, vacuum pressure, slurry concentration, number of coats, and immersion time. A dense electrolyte layer is formed on the anode tube after final sintering at 1400 °C. With decrease in the pre-sintering temperature of the anode tube, the grain size of the coated electrolyte layer increases and the number of surface pores in the coating layer decreases. This is attributed to a reduced difference in the respective shrinkage of the anode tube and the electrolyte layer. The thickness of the coated electrolyte layer increases with the content of solid powder in the slurry, the number of dip-coats, and the immersion time. Although vacuum pressure has no great influence on the electrolyte thickness, higher vacuum produces a denser coating layer, as confirmed by low gas permeability and a reduced number of defects in the coating layer. A single cell with the vacuum slurry coated electrolyte shows a good performance of 620 mW cm -2 (0.7 V) at 750 °C. These experimental results indicate that the vacuum slurry-coating process is an effective method to fabricate a dense thin film on a porous anode support.

Flexible radiator thermal vacuum test report

NASA Technical Reports Server (NTRS)

Oren, J. A.; Hixon, C. W.

1982-01-01

Two flexible, deployable/retraction radiators were designed and fabricated. The two radiator panels are distinguishable by their mission life design. One panel is designed with a 90 percent probability of withstanding the micrometeoroid environment of a low earth orbit for 30 days. This panel is designated the soft tube radiator after the PFA Teflon tubes which distribute the transport fluid over the panel. The second panel is designed with armored flow tubes to withstand the same micrometeoroid environment for 5 years. It is designated the hard tube radiator after its stainless steel flow tubes. The thermal performance of the radiators was tested under anticipated environmental conditions. The two deployment systems of the radiators were evaluated in a thermal vacuum environment.

Ultra high vacuum seal arrangement

DOEpatents

Flaherty, Robert

1981-01-01

Arrangement for demountably sealing two concentric metallic tubes in an ultra high vacuum system which facilitates remote actuation. A tubular seal includes integral spaced lips which circumferentially engage the metallic tubes. The lips plastically deform the metallic tubes by mechanical forces resulting from a martensite to austenite transformation of the tubular seal upon application of a predetermined temperature. The sealing force is released upon application of another temperature which causes a transformation from the stronger austenite to the weaker martensite. Use of a dual acting sealing ring and driving ring circumferentially contacting the sealing ring is particularly applicable to sealing larger diameter concentric metallic members.

Quantum Optical Transistor and Other Devices Based on Nanostructures

NASA Astrophysics Data System (ADS)

Li, Jin-Jin; Zhu, Ka-Di

Laser and strong coupling can coexist in a single quantum dot (QD) coupled to nanostructures. This provides an important clue toward the realization of quantum optical devices, such as quantum optical transistor, slow light device, fast light device, or light storage device. In contrast to conventional electronic transistor, a quantum optical transistor uses photons as signal carriers rather than electrons, which has a faster and more powerful transfer efficiency. Under the radiation of a strong pump laser, a signal laser can be amplified or attenuated via passing through a single quantum dot coupled to a photonic crystal (PC) nanocavity system. Such a switching and amplifying behavior can really implement the quantum optical transistor. By simply turning on or off the input pump laser, the amplified or attenuated signal laser can be obtained immediately. Based on this transistor, we further propose a method to measure the vacuum Rabi splitting of exciton in all-optical domain. Besides, we study the light propagation in a coupled QD and nanomechanical resonator (NR) system. We demonstrate that it is possible to achieve the slow light, fast light, and quantum memory for light on demand, which is based on the mechanically induced coherent population oscillation (MICPO) and exciton polaritons. These QD devices offer a route toward the use of all-optical technique to investigate the coupled QD systems and will make contributions to quantum internets and quantum computers.

Transistor Effect in Improperly Connected Transistors.

ERIC Educational Resources Information Center

Luzader, Stephen; Sanchez-Velasco, Eduardo

1996-01-01

Discusses the differences between the standard representation and a realistic representation of a transistor. Presents an experiment that helps clarify the explanation of the transistor effect and shows why transistors should be connected properly. (JRH)

Wall-ablative laser-driven in-tube accelerator

NASA Astrophysics Data System (ADS)

Sasoh, Akihiro; Suzuki, Shingo; Matsuda, Atsushi

2008-05-01

The laser-driven in-tube accelerator in which the propellant is supplied from laser-ablated gas from the tube wall was developed. Proof-of concept demonstrations of vertical launch were successfully done. The device had a 25mm X 25mm square cross-section; two opposing walls were made of polyacetal and acted as the propellant, the other two acrylic window with guide grooves to the projectile. The upper end of the launch tube was connected to a vacuum chamber of an inner volume of 0.8 m2, in which the initial pressure was set to lower than 20 Pa. With plugging the bottom end of the launch tube, a momentum coupling coefficient exceeding 2.5 mN/W was obtained. Even with the bottom end connected to the same vacuum chamber through a different duct, the projectile was vertical launched successfully, obtaining 0.14 mN/W.

Historical Perspective on Technology and Music.

ERIC Educational Resources Information Center

Webster, Peter

2002-01-01

Explores the historical developments in technology that affected music education. Describes the developments in hardware, such as gears and levers, electricity, vacuum tubes, transistors, and integrated circuits. Discusses the changes in computer software from the 1950s to the present. (CMK)

Planar edge Schottky barrier-tunneling transistors using epitaxial graphene/SiC junctions.

PubMed

Kunc, Jan; Hu, Yike; Palmer, James; Guo, Zelei; Hankinson, John; Gamal, Salah H; Berger, Claire; de Heer, Walt A

2014-09-10

A purely planar graphene/SiC field effect transistor is presented here. The horizontal current flow over one-dimensional tunneling barrier between planar graphene contact and coplanar two-dimensional SiC channel exhibits superior on/off ratio compared to conventional transistors employing vertical electron transport. Multilayer epitaxial graphene (MEG) grown on SiC(0001̅) was adopted as the transistor source and drain. The channel is formed by the accumulation layer at the interface of semi-insulating SiC and a surface silicate that forms after high vacuum high temperature annealing. Electronic bands between the graphene edge and SiC accumulation layer form a thin Schottky barrier, which is dominated by tunneling at low temperatures. A thermionic emission prevails over tunneling at high temperatures. We show that neglecting tunneling effectively causes the temperature dependence of the Schottky barrier height. The channel can support current densities up to 35 A/m.

Electron tubes for industrial applications

NASA Astrophysics Data System (ADS)

Gellert, Bernd

1994-05-01

This report reviews research and development efforts within the last years for vacuum electron tubes, in particular power grid tubes for industrial applications. Physical and chemical effects are discussed that determine the performance of todays devices. Due to the progress made in the fundamental understanding of materials and newly developed processes the reliability and reproducibility of power grid tubes could be improved considerably. Modern computer controlled manufacturing methods ensure a high reproducibility of production and continuous quality certification according to ISO 9001 guarantees future high quality standards. Some typical applications of these tubes are given as an example.

Flexible Textile-Based Organic Transistors Using Graphene/Ag Nanoparticle Electrode

PubMed Central

Kim, Youn; Kwon, Yeon Ju; Lee, Kang Eun; Oh, Youngseok; Um, Moon-Kwang; Seong, Dong Gi; Lee, Jea Uk

2016-01-01

Highly flexible and electrically-conductive multifunctional textiles are desirable for use in wearable electronic applications. In this study, we fabricated multifunctional textile composites by vacuum filtration and wet-transfer of graphene oxide films on a flexible polyethylene terephthalate (PET) textile in association with embedding Ag nanoparticles (AgNPs) to improve the electrical conductivity. A flexible organic transistor can be developed by direct transfer of a dielectric/semiconducting double layer on the graphene/AgNP textile composite, where the textile composite was used as both flexible substrate and conductive gate electrode. The thermal treatment of a textile-based transistor enhanced the electrical performance (mobility = 7.2 cm2·V−1·s−1, on/off current ratio = 4 × 105, and threshold voltage = −1.1 V) due to the improvement of interfacial properties between the conductive textile electrode and the ion-gel dielectric layer. Furthermore, the textile transistors exhibited highly stable device performance under extended bending conditions (with a bending radius down to 3 mm and repeated tests over 1000 cycles). We believe that our simple methods for the fabrication of graphene/AgNP textile composite for use in textile-type transistors can potentially be applied to the development of flexible large-area electronic clothes. PMID:28335276

Intrinsic delay of permeable base transistor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Wenchao; Guo, Jing; So, Franky

2014-07-28

Permeable base transistors (PBTs) fabricated by vacuum deposition or solution process have the advantages of easy fabrication and low power operation and are a promising device structure for flexible electronics. Intrinsic delay of PBT, which characterizes the speed of the transistor, is investigated by solving the three-dimensional Poisson equation and drift-diffusion equation self-consistently using finite element method. Decreasing the emitter thickness lowers the intrinsic delay by improving on-current, and a thinner base is also preferred for low intrinsic delay because of fewer carriers in the base region at off-state. The intrinsic delay exponentially decreases as the emitter contact Schottky barriermore » height decreases, and it linearly depends on the carrier mobility. With an optimized emitter contact barrier height and device geometry, a sub-nano-second intrinsic delay can be achieved with a carrier mobility of ∼10 cm{sup 2}/V/s obtainable in solution processed indium gallium zinc oxide, which indicates the potential of solution processed PBTs for GHz operations.« less

Multilayer screen gives cathode ray tube high contrast

NASA Technical Reports Server (NTRS)

Bullinger, H.; Hilborn, E. H.

1970-01-01

Fabrication method for cathode ray tubes uses low-cost siloxane resin formulations. The resins contain sufficient methyl or phenyl groups for solubility in organic solvents. After vaporization and baking, the polymerized material is stable under vacuum and under temperatures required for tube fabrication.

On-Chip Sorting of Long Semiconducting Carbon Nanotubes for Multiple Transistors along an Identical Array.

PubMed

Otsuka, Keigo; Inoue, Taiki; Maeda, Etsuo; Kometani, Reo; Chiashi, Shohei; Maruyama, Shigeo

2017-11-28

Ballistic transport and sub-10 nm channel lengths have been achieved in transistors containing one single-walled carbon nanotube (SWNT). To fill the gap between single-tube transistors and high-performance logic circuits for the replacement of silicon, large-area, high-density, and purely semiconducting (s-) SWNT arrays are highly desired. Here we demonstrate the fabrication of multiple transistors along a purely semiconducting SWNT array via an on-chip purification method. Water- and polymer-assisted burning from site-controlled nanogaps is developed for the reliable full-length removal of metallic SWNTs with the damage to s-SWNTs minimized even in high-density arrays. All the transistors with various channel lengths show large on-state current and excellent switching behavior in the off-state. Since our method potentially provides pure s-SWNT arrays over a large area with negligible damage, numerous transistors with arbitrary dimensions could be fabricated using a conventional semiconductor process, leading to SWNT-based logic, high-speed communication, and other next-generation electronic devices.

Military Curricula for Vocational & Technical Education. Basic Electricity and Electronics. CANTRAC A-100-0010. Module 21: Basic Transistor Theory; Module 21T: Multi-Element Vacuum Tubes. Study Booklet.

ERIC Educational Resources Information Center

Chief of Naval Education and Training Support, Pensacola, FL.

This set of individualized learning modules on transistor theory is one in a series of modules for a course in basic electricity and electronics. The course is one of a number of military-developed curriculum packages selected for adaptation to vocational instructional and curriculum development in a civilian setting. Two modules are included in…

Evaluation of sample hemolysis in blood collected by S-Monovette using vacuum or aspiration mode.

PubMed

Lippi, Giuseppe; Avanzini, Paola; Musa, Roberta; Sandei, Franca; Aloe, Rosalia; Cervellin, Gianfranco

2013-01-01

In vitro hemolysis can be induced by several biological and technical sources, and may be worsened by forced aspiration of blood in vacuum tubes. This study was aimed to compare the probability of hemolysis by drawing blood with a commercial evacuated blood collection tube, and S-Monovette used either in the "vacuum" or "aspiration" mode. The study population consisted in 20 healthy volunteers. A sample was drawn into 4.0 mL BD Vacutainer serum tube from a vein of one upper arm. Two other samples were drawn with a second venipuncture from a vein of the opposite arm, into 4.0 mL S-Monovette serum tubes, by both vacuum an aspiration modes. After separation, serum potassium, lactate dehydrogenase (LD) and hemolysis index (HI) were tested on Beckman Coulter DxC. In no case the HI exceed the limit of significant hemolysis. As compared with BD Vacutainer, no significant differences were observed for potassium and LD using S-Monovette with vacuum method. Significant increased values of both parameters were however found in serum collected into BD Vacutainer and S-Monovette by vacuum mode, compared to serum drawn by S-Monovette in aspiration mode. The mean potassium bias was 2.2% versus BD Vacutainer and 2.4% versus S-Monovette in vacuum mode, that of LD was 2.7% versus BD Vacutainer and 2.1% versus S-Monovette in vacuum mode. None of these variations exceeded the allowable total error. Although no significant macro-hemolysis was observed with any collection system, the less chance of producing micro-hemolysis by S-Monovette in aspiration mode suggest that this device may be used when a difficult venipuncture combined with the vacuum may increase the probability of spurious hemolysis.

The fabrication and optical detection of a vertical structure organic thin film transistor

NASA Astrophysics Data System (ADS)

Zhang, H.; Wang, D.; Jia, P.

2014-03-01

Using vacuum evaporation and sputtering process, we prepared a photoelectric transistor with the vertical structure of Cu/copper phthalocyanine (CuPc)/Al/copper phthalocyanine (CuPc)/ITO. The material of CuPc semiconductor has good photosensitive properties. Excitons will be generated after the optical signal irradiation in semiconductor material, and then transformed into photocurrent under the built-in electric field formed by the Schottky contact, as the organic transistor drive current makes the output current enlarged. The results show that the I-V characteristics of transistor are unsaturated. When device was irradiated by full band (white) light, its working current significantly increased. In full band white light, when Vec = 3 V, the ratio of light and no light current was ranged for 2.9-6.4 times. Device in the absence of light current amplification coefficient is 16.5, and white light amplification coefficient is 98.65.

Effect of Vacuum on Venous Drainage: an Experimental Evaluation on Pediatric Venous Cannulas and Tubing Systems.

PubMed

Vida, V L; Bhattarai, A; Speggiorin, S; Zanella, F; Stellin, G

2014-01-01

To observe how vacuum assisted venous drainage (VAVD) may influence the flow in a cardiopulmonary bypass circuit with different size of venous lines and cannulas. The experimental circuit was assembled to represent the cardiopulmonary bypass circuit routinely used during cardiac surgery. Wall suction was applied directly, modulated and measured into the venous reservoir. The blood flow was measured with a flow-meter positioned on the venous line. The circuit prime volume was replaced with group O date expired re-suspended red cells and Plasmalyte 148 to a hematocrit of 28% to 30%. In an open circuit with gravity siphon venous drain, angled cannulae drain more than straight ones regardless the amount of suction applied to the venous line (16 Fr straight cannula (S) drains 90 ml/min less than a 16 Fr angled (A) with a siphon gravity). The same flow can be obtained with lower cannula size and higher suction (i.e. 12 A with and -30 mmHg). Tables have been created to list how the flow varies according to the size of the cannulas, the size of the venous tubes, and the amount of suction applied to the system. Vacuum assisted venous drainage allows the use of smaller cannulae and venous lines to maintain a good venous return, which is very useful during minimally invasive approaches. The present study should be considered as a preliminary attempt to create a scientific-based starting point for a uniform the use of VAVD.

Naphthacene Based Organic Thin Film Transistor With Rare Earth Oxide

NASA Astrophysics Data System (ADS)

Konwar, K.; Baishya, B.

2010-12-01

Naphthacene based organic thin film transistors (OTFTs) have been fabricated using La2O3, as the gate insulator. All the OTFTs have been fabricated by the process of thermal evaporation in vacuum on perfectly cleaned glass substrates with aluminium as source-drain and gate electrodes. The naphthacene film morphology on the glass substrate has been studied by XRD and found to be polycrystalline in nature. The field effect mobility, output resistance, amplification factor, transconductance and gain bandwidth product of the OTFTs have been calculated by using theoretical TFT model. The highest value of field effect mobility is found to be 0.07×10-3 cm2V-1s-1 for the devices annealed in vacuum at 90° C for 5 hours.

Flexible organic transistors and circuits with extreme bending stability

NASA Astrophysics Data System (ADS)

Sekitani, Tsuyoshi; Zschieschang, Ute; Klauk, Hagen; Someya, Takao

2010-12-01

Flexible electronic circuits are an essential prerequisite for the development of rollable displays, conformable sensors, biodegradable electronics and other applications with unconventional form factors. The smallest radius into which a circuit can be bent is typically several millimetres, limited by strain-induced damage to the active circuit elements. Bending-induced damage can be avoided by placing the circuit elements on rigid islands connected by stretchable wires, but the presence of rigid areas within the substrate plane limits the bending radius. Here we demonstrate organic transistors and complementary circuits that continue to operate without degradation while being folded into a radius of 100μm. This enormous flexibility and bending stability is enabled by a very thin plastic substrate (12.5μm), an atomically smooth planarization coating and a hybrid encapsulation stack that places the transistors in the neutral strain position. We demonstrate a potential application as a catheter with a sheet of transistors and sensors wrapped around it that enables the spatially resolved measurement of physical or chemical properties inside long, narrow tubes.

Electrical in-situ characterisation of interface stabilised organic thin-film transistors

PubMed Central

Striedinger, Bernd; Fian, Alexander; Petritz, Andreas; Lassnig, Roman; Winkler, Adolf; Stadlober, Barbara

2015-01-01

We report on the electrical in-situ characterisation of organic thin film transistors under high vacuum conditions. Model devices in a bottom-gate/bottom-contact (coplanar) configuration are electrically characterised in-situ, monolayer by monolayer (ML), while the organic semiconductor (OSC) is evaporated by organic molecular beam epitaxy (OMBE). Thermal SiO2 with an optional polymer interface stabilisation layer serves as the gate dielectric and pentacene is chosen as the organic semiconductor. The evolution of transistor parameters is studied on a bi-layer dielectric of a 150 nm of SiO2 and 20 nm of poly((±)endo,exo-bicyclo[2.2.1]hept-5-ene-2,3-dicarboxylic acid, diphenylester) (PNDPE) and compared to the behaviour on a pure SiO2 dielectric. The thin layer of PNDPE, which is an intrinsically photo-patternable organic dielectric, shows an excellent stabilisation performance, significantly reducing the calculated interface trap density at the OSC/dielectric interface up to two orders of magnitude, and thus remarkably improving the transistor performance. PMID:26457122

Note: Development of target changeable palm-top pyroelectric x-ray tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Imashuku, Susumu; Kawai, Jun

2012-01-15

A target changeable palm-top size x-ray tube was realized using pyroelectric crystal and detachable vacuum flanges. The target metals can be exchanged easily by attaching them on the brass stage with carbon tape. When silver and titanium palates (area: 10 mm{sup 2}) were used as targets, silver L{alpha} and titanium K lines were clearly observed by bombarding electrons on the targets for 90 s. The intensities were the same or higher than those of previously reported pyroelectric x-ray tubes. Chromium, iron, nickel, copper, and zinc K lines in the x-ray tube (stainless steel and brass) disappeared by replacing the brassmore » stage and the stainless steel vacuum flange with a carbon stage and a glass tube, respectively.« less

APPARATUS FOR VACUUM DEPOSITION OF METALS

DOEpatents

Milleron, N.

1962-03-13

An apparatus and a method are described for continuous vacuum deposition of metals for metallic coatings, for ultra-high vacuum work, for purification of metals, for maintaining high-density electron currents, and for other uses. The apparatus comprises an externally cooled feeder tube extending into a container and adapted to feed metal wire or strip so that it emerges in a generally vertical position therein. The tube also provides shielding from the heat produced by an electron beam therein focused to impinge from a vertical direction upon the tip of the emerging wire. By proper control of the wire feed, coolant feed, and electron beam intensity, a molten ball of metal forms upon the emerging tip and remains self-supported thereon by the interaction of various forces. The metal is vaporized and travels in a line of sight direction, while additional wire is fed from the tube, so that the size of the molten ball remains constant. In the preferred embodiments, the wire is selected from a number of gettering metals and is degassed by electrical resistance in an adjacent chamber which is also partially evacuated. The wire is then fed through the feed tube into the electron beam and vaporizes and adsorbs gases to provide pumping action while being continuously deposited upon surfaces within the chamber. Ion pump electrodes may also be provided within line of sight of the vaporizing metal source to enhance the pumping action. (AEC)

Evaporation Source for Deposition of Protective Layers inside Tubes

NASA Astrophysics Data System (ADS)

Musa, Geavit; Mustata, Ion; Dinescu, Gheorghe; Bajeu, George; Raiciu, Elena

1992-09-01

A heated cathode arc can be ignited in vacuum in the vapours of the anode material due to the accelerated electron beam from the cathode. A small assembly, consisting of an electron gun as the cathode and a refractory metal crucible, containing the material to be evaporated, as the anode, can be moved along the axis of the tube whose inside wall is to be covered with a protective layer. The vacuum arc ignited between the electrodes in the vapours of the evaporating anode material ensures a high deposition rate with low thermal energy transport to the tube wall. This new method can be used for the deposition of various metal layers inside different kinds of tubes (metallic, glass, ceramics or plastics).

O-Ring sealing arrangements for ultra-high vacuum systems

DOEpatents

Kim, Chang-Kyo; Flaherty, Robert

1981-01-01

An all metal reusable O-ring sealing arrangement for sealing two concentric tubes in an ultra-high vacuum system. An O-ring of a heat recoverable alloy such as Nitinol is concentrically positioned between protruding sealing rings of the concentric tubes. The O-ring is installed between the tubes while in a stressed martensitic state and is made to undergo a thermally induced transformation to an austenitic state. During the transformation the O-ring expands outwardly and contracts inwardly toward a previously sized austenitic configuration, thereby sealing against the protruding sealing rings of the concentric tubes.

Cesium iodide crystals fused to vacuum tube faceplates

NASA Technical Reports Server (NTRS)

Fleck, H. G.

1964-01-01

A cesium iodide crystal is fused to the lithium fluoride faceplate of a photon scintillator image tube. The conventional silver chloride solder is then used to attach the faceplate to the metal support.

Window-assisted nanosphere lithography for vacuum micro-nano-electronics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Nannan; Institute of Electronic Engineering, Chinese Academy of Engineering Physics, Mianyang, 621900; Pang, Shucai

2015-04-15

Development of vacuum micro-nano-electronics is quite important for combining the advantages of vacuum tubes and solid-state devices but limited by the prevailing fabricating techniques which are expensive, time consuming and low-throughput. In this work, window-assisted nanosphere lithography (NSL) technique was proposed and enabled the low-cost and high-efficiency fabrication of nanostructures for vacuum micro-nano-electronic devices, thus allowing potential applications in many areas. As a demonstration, we fabricated high-density field emitter arrays which can be used as cold cathodes in vacuum micro-nano-electronic devices by using the window-assisted NSL technique. The details of the fabricating process have been investigated. This work provided amore » new and feasible idea for fabricating nanostructure arrays for vacuum micro-nano-electronic devices, which would spawn the development of vacuum micro-nano-electronics.« less

STABILIZED TRANSISTOR AMPLIFIER

DOEpatents

Noe, J.B.

1963-05-01

A temperature stabilized transistor amplifier having a pair of transistors coupled in cascade relation that are capable of providing amplification through a temperature range of - 100 un. Concent 85% F to 400 un. Concent 85% F described. The stabilization of the amplifier is attained by coupling a feedback signal taken from the emitter of second transistor at a junction between two serially arranged biasing resistances in the circuit of the emitter of the second transistor to the base of the first transistor. Thus, a change in the emitter current of the second transistor is automatically corrected by the feedback adjustment of the base-emitter potential of the first transistor and by a corresponding change in the base-emitter potential of the second transistor. (AEC)

Scanning Tunneling Microscope For Use In Vacuum

NASA Technical Reports Server (NTRS)

Abel, Phillip B.

1993-01-01

Scanning tunneling microscope with subangstrom resolution developed to study surface structures. Although instrument used in air, designed especially for use in vacuum. Scanning head is assembly of small, mostly rigid components made of low-outgassing materials. Includes coarse-positioning mechanical-translation stage, on which specimen mounted by use of standard mounting stub. Tunneling tip mounted on piezoelectric fine-positioning tube. Application of suitable voltages to electrodes on piezoelectric tube controls scan of tunneling tip across surface of specimen. Electronic subsystem generates scanning voltages and collects data.

Tube Suction Test for Evaluating

DOT National Transportation Integrated Search

2012-06-01

In a comprehensive laboratory study, different tests namely, unconfined compressive strength (UCS) at the end of freeze-thaw/wet-dry (F-T/W-D) cycles, resilient modulus (Mr) at the end of F-T/W-D cycles, vacuum saturation, tube suction, and moisture ...

Apparatus facilitates high-temperature tensile testing in vacuum

NASA Technical Reports Server (NTRS)

Sikora, P. F.

1964-01-01

An apparutus for heating refractory materials to high temperatures during tensile testing includes a water-cooled stainless steel vacuum chamber. This contains a resistance heater consisting of a slit tube of tantalum or tungsten to enclose the tensile test rod.

A vacuum-sealed, gigawatt-class, repetitively pulsed high-power microwave source

NASA Astrophysics Data System (ADS)

Xun, Tao; Fan, Yu-wei; Yang, Han-wu; Zhang, Zi-cheng; Chen, Dong-qun; Zhang, Jian-de

2017-06-01

A compact L-band sealed-tube magnetically insulated transmission line oscillator (MILO) has been developed that does not require bulky external vacuum pump for repetitive operations. This device with a ceramic insulated vacuum interface, a carbon fiber array cathode, and non-evaporable getters has a base vacuum pressure in the low 10-6 Pa range. A dynamic 3-D Monte-Carlo model for the molecular flow movement and collision was setup for the MILO chamber. The pulse desorption, gas evolution, and pressure distribution were exactly simulated. In the 5 Hz repetition rate experiments, using a 600 kV diode voltage and 48 kA beam current, the average radiated microwave power for 25 shots is about 3.4 GW in 45 ns pulse duration. The maximum equilibrium pressure is below 4.0 × 10-2 Pa, and no pulse shortening limitations are observed during the repetitive test in the sealed-tube condition.

Organic thin film transistors using a liquid crystalline palladium phthalocyanine as active layer

NASA Astrophysics Data System (ADS)

Jiménez Tejada, Juan A.; Lopez-Varo, Pilar; Chaure, Nandu B.; Chambrier, Isabelle; Cammidge, Andrew N.; Cook, Michael J.; Jafari-Fini, Ali; Ray, Asim K.

2018-03-01

70 nm thick solution-processed films of a palladium phthalocyanine (PdPc6) derivative bearing eight hexyl (-C6H13) chains at non-peripheral positions have been employed as active layers in the fabrication of bottom-gate bottom-contact organic thin film transistors (OTFTs) deposited on highly doped p-type Si (110) substrates with SiO2 gate dielectric. The dependence of the transistor electrical performance upon the mesophase behavior of the PdPc6 films has been investigated by measuring the output and transfer characteristics of the OTFT having its active layer ex situ vacuum annealed at temperatures between 500 °C and 200 °C. A clear correlation between the annealing temperature and the threshold voltage and carrier mobility of the transistors, and the transition temperatures extracted from the differential scanning calorimetric curves for bulk materials has been established. This direct relation has been obtained by means of a compact electrical model in which the contact effects are taken into account. The precise determination of the contact-voltage drain-current curves allows for obtaining such a relation.

Doped Organic Transistors.

PubMed

Lüssem, Björn; Keum, Chang-Min; Kasemann, Daniel; Naab, Ben; Bao, Zhenan; Leo, Karl

2016-11-23

Organic field-effect transistors hold the promise of enabling low-cost and flexible electronics. Following its success in organic optoelectronics, the organic doping technology is also used increasingly in organic field-effect transistors. Doping not only increases device performance, but it also provides a way to fine-control the transistor behavior, to develop new transistor concepts, and even improve the stability of organic transistors. This Review summarizes the latest progress made in the understanding of the doping technology and its application to organic transistors. It presents the most successful doping models and an overview of the wide variety of materials used as dopants. Further, the influence of doping on charge transport in the most relevant polycrystalline organic semiconductors is reviewed, and a concise overview on the influence of doping on transistor behavior and performance is given. In particular, recent progress in the understanding of contact doping and channel doping is summarized.

A VACUUM OPERATED INSTRUMENT FOR HANDLING RADIUM TUBES

DOE Office of Scientific and Technical Information (OSTI.GOV)

Englander, O.

1964-03-01

Application of known principles resulted in the design of an apparatus for reducing exposure of x-ray technicians during the loading and unloading of radium tubes. The device offers the advantage of an increased distance between radium and fingers as compared with the conventionally used 25 mm forceps. A diagram of the instrument is included. (H.M.G.)

Vacuum system of the compact Energy Recovery Linac

DOE Office of Scientific and Technical Information (OSTI.GOV)

Honda, T., E-mail: tohru.honda@kek.jp; Tanimoto, Y.; Nogami, T.

2016-07-27

The compact Energy Recovery Linac (cERL), a test accelerator to establish important technologies demanded for future ERL-based light sources, was constructed in late 2013 at KEK. The accelerator was successfully commissioned in early 2014, and demonstrated beam circulation with energy recovery. In the cERL vacuum system, low-impedance vacuum components are required to circulate high-intensity, low-emittance and short-bunch electron beams. We therefore developed ultra-high-vacuum (UHV)-compatible flanges that can connect beam tubes seamlessly, and employed retractable beam monitors, namely, a movable Faraday cup and screen monitors. In most parts of the accelerator, pressures below 1×10{sup −7} Pa are required to mitigate beam-gasmore » interactions. Particularly, near the photocathode electron gun and the superconducting (SC) cavities, pressures below 1×10{sup −8} Pa are required. The beam tubes in the sections adjoining the SC cavities were coated with non-evaporable getter (NEG) materials, to reduce gas condensation on the cryo-surfaces. During the accelerator commissioning, stray magnetic fields from the permanent magnets of some cold cathode gauges (CCGs) were identified as a source of the disturbance to the beam orbit. Magnetic shielding was specially designed as a remedy for this issue.« less

CryoCart Restoration and Vacuum Pipe Construction

NASA Technical Reports Server (NTRS)

Chaidez, Mariana

2016-01-01

and connectors, system checks of the electrical system were ran to ensure that the system was working correctly. While completing system checks, the pressure transducers that were not functioning properly were also replaced and any issue with the wiring or signal was addressed. Once the electrical components were replaced, the restoration of the fluid system began. Parts of the tubing in the CryoCart had to be rebuild and often consisted of sizing, cutting, bending, filing, and sanding the tubing to prepare it to be flared. Many components had to be proof-tested to bring their certifications up to date, and several components had to be replaced. Various flex hoses, valves, and fittings were send to the Clean Lab because they were new, dirty, or had gone through proof-testing. Once they arrived from the cleaning lab they had to be put back to the system and leak checks and functional tests were conducted. In the Nitrogen system, the copper tubing located in the Oxygen cart was rebuild and Aerogel insulation was added to this section. A new gaseous nitrogen system was added to the CryoCart to purge the vacuum tube which will serve as the test chamber. Once the CryoCart was completed, construction of parts of the vacuum tube began. A flange was manufactured with welded fittings to hold the line of the vacuum pump as well as some extra fittings which will serve as extra inlets used to introduce fluid lines to the vacuum tube. Stress analysis was ran in this flange to ensure that it would not fail under vacuum conditions. The fluid lines leading from the air side of the vacuum to the test article were also constructed and added to the mount that had already been manufactured. Three different sets of tubing were constructed to accommodate the seven different RCS thruster and the main engine igniter that are going to be tested. Full electrical system checks were completed to ensure that all the wire harnesses and valves were functioning. Upon the completion of the Cryo

Stability of phenytoin in blood collected in vacuum blood collection tubes.

PubMed

Parish, R C; Alexander, T

1990-01-01

The stability of phenytoin in blood collected in plain and serum separator tubes (SSTs) was investigated under simulated storage and transport conditions. The drug was generally more stable in plain collection tubes than in SSTs. No degradation occurred in plain red-top tubes or in refrigerated SSTs, but clinically significant degradation was present in SSTs stored at room temperature (25 degrees C) and at elevated temperature (32 degrees C) 24 h after collection. The mean loss was 17.9% at 25 degrees C and 25.9% at 32 degrees C. It is recommended that if blood is to be transported or stored in SSTs, the samples be refrigerated unless assay can be performed within 8 h.

Results from sudden loss of vacuum on scaled superconducting radio frequency cryomodule experiment

NASA Astrophysics Data System (ADS)

Dalesandro, Andrew A.; Dhuley, Ram C.; Theilacker, Jay C.; Van Sciver, Steven W.

2014-01-01

Superconducting radio frequency (SRF) cavities for particle accelerators are at risk of failure due to sudden loss of vacuum (SLV) adjacent to liquid helium (LHe) spaces. To better understand this failure mode and its associated risks an experiment is designed to test the longitudinal effects of SLV within the beam tube of a scaled SRF cryomodule that has considerable length relative to beam tube cross section. The scaled cryomodule consists of six individual SRF cavities each roughly 350 mm long, initially cooled to 2 K by a superfluid helium bath and a beam tube pumped to vacuum. A fast-acting solenoid valve is used to simulate SLV on the beam tube, from which point it takes over 3 s for the beam tube pressure to equalize with atmosphere, and 30 s for the helium space to reach the relief pressure of 4 bara. A SLV longitudinal effect in the beam tube is evident in both pressure and temperature data, but interestingly the temperatures responds more quickly to SLV than do the pressures. It takes 500 ms (roughly 100 ms per cavity) for the far end of the 2 m long beam tube to respond to a pressure increase compared to 300 ms for temperature (approximately 50 ms per cavity). The paper expands upon these and other results to better understand the longitudinal effect for SRF cryomodules due to SLV.

Reversible and Precisely Controllable p/n-Type Doping of MoTe2 Transistors through Electrothermal Doping.

PubMed

Chang, Yuan-Ming; Yang, Shih-Hsien; Lin, Che-Yi; Chen, Chang-Hung; Lien, Chen-Hsin; Jian, Wen-Bin; Ueno, Keiji; Suen, Yuen-Wuu; Tsukagoshi, Kazuhito; Lin, Yen-Fu

2018-03-01

Precisely controllable and reversible p/n-type electronic doping of molybdenum ditelluride (MoTe 2 ) transistors is achieved by electrothermal doping (E-doping) processes. E-doping includes electrothermal annealing induced by an electric field in a vacuum chamber, which results in electron (n-type) doping and exposure to air, which induces hole (p-type) doping. The doping arises from the interaction between oxygen molecules or water vapor and defects of tellurium at the MoTe 2 surface, and allows the accurate manipulation of p/n-type electrical doping of MoTe 2 transistors. Because no dopant or special gas is used in the E-doping processes of MoTe 2 , E-doping is a simple and efficient method. Moreover, through exact manipulation of p/n-type doping of MoTe 2 transistors, quasi-complementary metal oxide semiconductor adaptive logic circuits, such as an inverter, not or gate, and not and gate, are successfully fabricated. The simple method, E-doping, adopted in obtaining p/n-type doping of MoTe 2 transistors undoubtedly has provided an approach to create the electronic devices with desired performance. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Paraformaldehyde pellet not necessary in vacuum-pumped maple sap system

Treesearch

H. Clay Smith; Carter B. Gibbs

1970-01-01

In a study of sugar maple sap collection through a vacuum-pumped plastic tubing system, yields were compared between tapholes in which paraformaldehyde pellets were used and tapholes without pellets, Use of the pellets did not increase yield.

Giant electron-hole transport asymmetry in ultra-short quantum transistors.

PubMed

McRae, A C; Tayari, V; Porter, J M; Champagne, A R

2017-05-31

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e-h charging energy asymmetry). We parameterize the e-h transport asymmetry by the ratio of the hole and electron charging energies η e-h . This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, η e-h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV.

Giant electron-hole transport asymmetry in ultra-short quantum transistors

PubMed Central

McRae, A. C.; Tayari, V.; Porter, J. M.; Champagne, A. R.

2017-01-01

Making use of bipolar transport in single-wall carbon nanotube quantum transistors would permit a single device to operate as both a quantum dot and a ballistic conductor or as two quantum dots with different charging energies. Here we report ultra-clean 10 to 100 nm scale suspended nanotube transistors with a large electron-hole transport asymmetry. The devices consist of naked nanotube channels contacted with sections of tube under annealed gold. The annealed gold acts as an n-doping top gate, allowing coherent quantum transport, and can create nanometre-sharp barriers. These tunnel barriers define a single quantum dot whose charging energies to add an electron or a hole are vastly different (e−h charging energy asymmetry). We parameterize the e−h transport asymmetry by the ratio of the hole and electron charging energies ηe−h. This asymmetry is maximized for short channels and small band gap tubes. In a small band gap device, we demonstrate the fabrication of a dual functionality quantum device acting as a quantum dot for holes and a much longer quantum bus for electrons. In a 14 nm-long channel, ηe−h reaches up to 2.6 for a device with a band gap of 270 meV. The charging energies in this device exceed 100 meV. PMID:28561024

Transistor-based interface circuitry

DOEpatents

Taubman, Matthew S [Richland, WA

2007-02-13

Among the embodiments of the present invention is an apparatus that includes a transistor, a servo device, and a current source. The servo device is operable to provide a common base mode of operation of the transistor by maintaining an approximately constant voltage level at the transistor base. The current source is operable to provide a bias current to the transistor. A first device provides an input signal to an electrical node positioned between the emitter of the transistor and the current source. A second device receives an output signal from the collector of the transistor.

Front-end circuit for position sensitive silicon and vacuum tube photomultipliers with gain control and depth of interaction measurement

NASA Astrophysics Data System (ADS)

Herrero, Vicente; Colom, Ricardo; Gadea, Rafael; Lerche, Christoph W.; Cerdá, Joaquín; Sebastiá, Ángel; Benlloch, José M.

2007-06-01

Silicon Photomultipliers, though still under development for mass production, may be an alternative to traditional Vacuum Photomultipliers Tubes (VPMT). As a consequence, electronic front-ends initially designed for VPMT will need to be modified. In this simulation, an improved architecture is presented which is able to obtain impact position and depth of interaction of a gamma ray within a continuous scintillation crystal, using either kind of PM. A current sensitive preamplifier stage with individual gain adjustment interfaces the multi-anode PM outputs with a current division resistor network. The preamplifier stage allows to improve front-end processing delay and temporal resolution behavior as well as to increase impact position calculation resolution. Depth of interaction (DOI) is calculated from the width of the scintillation light distribution, which is related to the sum of voltages in resistor network input nodes. This operation is done by means of a high-speed current mode scheme.

Can Vacuum Assisted Venous Drainage be Achieved using a Roller Pump in an Emergency? A Pilot Study using Neonatal Circuitry

PubMed Central

Hill, S. L.; Holt, D. W.

2007-01-01

Abstract: There has been much advancement in perfusion technology over its 50 years of progression. One of these techniques is vacuum-assisted venous drainage (VAVD). Many perfusionists augment venous drainage using VAVD, typically from a wall vacuum source. This study explores alternates to providing VAVD if the wall vacuum fails. In two porcine laboratories, ∼36 in. of 3/16-in. tubing was connected to a sucker return port and placed into the roller head next to the arterial pump. The vacuum was monitored with a DLP pressure monitoring system (Medtronic). This system was connected to small-bore tubing and attached to a stopcock on top of the reservoir. The vacuum was regulated using another stopcock connected to a non-filtered luer lock port on top of the reservoir or by a segment of 3 × 0.25-in.-diameter tubing attached to the vent port with a c-clamp. Vacuum drainage was achieved, ranging from −18 mmHg to −71 mmHg by manipulating the stopcock or c-clamp. Changes in venous drainage were seen by volume fluctuations in the venous reservoir. The vacuum was adjusted to account for dramatic changes. Augmented venous drainage using a roller pump can be achieved successfully during cardiopulmonary bypass (CPB). This method of active drainage can be used in lieu of wall suction or during times of emergency if wall suction fails. PMID:18293812

METAL SPRAYER FOR USE IN VACUUM OR INERT ATMOSPHERE

DOEpatents

Monroe, R.E.

1958-10-14

A metal sprayer is described for use in a vacuum or inert atmosphere with a straight line wire feed and variable electrode contact angle. This apparatus comprises two wires which are fed through straight tubes of two mechanisms positioned on opposite sides of a central tube to which an inert gas is fed. The two mechanisms and the wires being fed constitute electrodes to which electrical current is supplied so that the wires are melted by the electric are formed at their contacting region and sprayed by the gas supplied by the central tube. This apparatus is designed specifically to apply a zirconium coating to uranium in an inert atmosphere and without the use of an oxidizing flame.

VOLTAGE-CONTROLLED TRANSISTOR OSCILLATOR

DOEpatents

Scheele, P.F.

1958-09-16

This patent relates to transistor oscillators and in particular to those transistor oscillators whose frequencies vary according to controlling voltages. A principal feature of the disclosed transistor oscillator circuit resides in the temperature compensation of the frequency modulating stage by the use of a resistorthermistor network. The resistor-thermistor network components are selected to have the network resistance, which is in series with the modulator transistor emitter circuit, vary with temperature to compensate for variation in the parameters of the transistor due to temperature change.

A drift chamber with a new type of straws for operation in vacuum

NASA Astrophysics Data System (ADS)

Azorskiy, N.; Glonti, L.; Gusakov, Yu.; Elsha, V.; Enik, T.; Kakurin, S.; Kekelidze, V.; Kislov, E.; Kolesnikov, A.; Madigozhin, D.; Movchan, S.; Polenkevich, I.; Potrebenikov, Yu.; Samsonov, V.; Shkarovskiy, S.; Sotnikov, S.; Zinchenko, A.; Danielsson, H.; Bendotti, J.; Degrange, J.; Dixon, N.; Lichard, P.; Morant, J.; Palladino, V.; Gomez, F. Perez; Ruggiero, G.; Vergain, M.

2016-07-01

A 2150×2150 mm2 registration area drift chamber capable of working in vacuum is presented. Thin-wall tubes (straws) of a new type are used in the chamber. A large share of these 9.80 mm diameter drift tubes are made in Dubna from metalized 36 μm Mylar film welded along the generatrix using an ultrasonic welding machine created at JINR. The main features of the chamber and some characteristics of the drift tubes are described. Four such chambers with the X, Y, U, V coordinates each, containing 7168 straws in total, are designed and produced at JINR and CERN. They are installed in the vacuum volume of the NA62 setup in order to study the ultra-rare decay K+ →π+ vv bar and to search for and study rare meson decays. In autumn 2014 the chambers were used for the first time for the data taking in the experimental run of the NA62 at CERN's SPS.

TRANSISTORIZED RADIATION MEASURING APPARATUS FOR $gamma$-RAYS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beug, L.; Rudack, G.

1961-06-24

It is often necessary to measure the content of containers which for various reasons cannot be opened or inspected visually, but the gamma rays emitted by certain radioisotopes can be used for these measuring purposes because they can penetrate iron walls of from 2 to 100 mm thickness. A level gage is described which consists of a measuring table, a radiation source, a radiation detector, a transformer which converts the incident rays in electric current, a discriminator, a recording device, and an adequate current supply. In principle, there are 2 different measuring methods: one uses 2 counting tubes and determinesmore » the level by the difference method, while the other uses only one tube which has been calibrated with a standard source. Several circuit diagrams used in the construction of the devices are discussed. The use of transistors instead of electron tubes is advantageous because they are more compact, sturdier, less dependent on temperature, have a longer life time, and are more economical. A table shows the characteristic properties of one radiation measuring device: 100 pulses/sec, 200 mu amp, -20 deg -+50 deg C, 500-5000 OMEGA , 12w, counting duration 10/sup 10/ pulses. (OID)« less

Radiation-hardened transistor and integrated circuit

DOEpatents

Ma, Kwok K.

2007-11-20

A composite transistor is disclosed for use in radiation hardening a CMOS IC formed on an SOI or bulk semiconductor substrate. The composite transistor has a circuit transistor and a blocking transistor connected in series with a common gate connection. A body terminal of the blocking transistor is connected only to a source terminal thereof, and to no other connection point. The blocking transistor acts to prevent a single-event transient (SET) occurring in the circuit transistor from being coupled outside the composite transistor. Similarly, when a SET occurs in the blocking transistor, the circuit transistor prevents the SET from being coupled outside the composite transistor. N-type and P-type composite transistors can be used for each and every transistor in the CMOS IC to radiation harden the IC, and can be used to form inverters and transmission gates which are the building blocks of CMOS ICs.

Casimir Effect in Hemisphere Capped Tubes

NASA Astrophysics Data System (ADS)

Bezerra de Mello, E. R.; Saharian, A. A.

2016-02-01

In this paper we investigate the vacuum densities for a massive scalar field with general curvature coupling in background of a (2 + 1)-dimensional spacetime corresponding to a cylindrical tube with a hemispherical cap. A complete set of mode functions is constructed and the positive-frequency Wightman function is evaluated for both the cylindrical and hemispherical subspaces. On the base of this, the vacuum expectation values of the field squared and energy-momentum tensor are investigated. The mean field squared and the normal stress are finite on the boundary separating two subspaces, whereas the energy density and the parallel stress diverge as the inverse power of the distance from the boundary. For a conformally coupled field, the vacuum energy density is negative on the cylindrical part of the space. On the hemisphere, it is negative near the top and positive close to the boundary. In the case of minimal coupling the energy density on the cup is negative. On the tube it is positive near the boundary and negative at large distances. Though the geometries of the subspaces are different, the Casimir pressures on the separate sides of the boundary are equal and the net Casimir force vanishes. The results obtained may be applied to capped carbon nanotubes described by an effective field theory in the long-wavelength approximation.

Coaxial tube array space transmission line characterization

NASA Technical Reports Server (NTRS)

Switzer, Colleen A.; Bents, David J.

1987-01-01

The coaxial tube array tether/transmission line used to connect an SP-100 nuclear power system to the space station was characterized over the range of reactor-to-platform separation distances of 1 to 10 km. Characterization was done with respect to array performance, physical dimensions and masses. Using a fixed design procedure, a family of designs was generated for the same power level (300 kWe), power loss (1.5 percent), and meteoroid survival probability (99.5 percent over 10 yr). To differentiate between vacuum insulated and gas insulated lines, two different maximum values of the E field were considered: 20 kV/cm (appropriate to vacuum insulation) and 50 kV/cm (compressed SF6). Core conductor, tube, bumper, standoff, spacer and bumper support dimensions, and masses were also calculated. The results of the characterization show mainly how transmission line size and mass scale with reactor-to-platform separation distance.

Coaxial tube array space transmission line characterization

NASA Astrophysics Data System (ADS)

Switzer, Colleen A.; Bents, David J.

The coaxial tube array tether/transmission line used to connect an SP-100 nuclear power system to the space station was characterized over the range of reactor-to-platform separation distances of 1 to 10 km. Characterization was done with respect to array performance, physical dimensions and masses. Using a fixed design procedure, a family of designs was generated for the same power level (300 kWe), power loss (1.5 percent), and meteoroid survival probability (99.5 percent over 10 yr). To differentiate between vacuum insulated and gas insulated lines, two different maximum values of the E field were considered: 20 kV/cm (appropriate to vacuum insulation) and 50 kV/cm (compressed SF6). Core conductor, tube, bumper, standoff, spacer and bumper support dimensions, and masses were also calculated. The results of the characterization show mainly how transmission line size and mass scale with reactor-to-platform separation distance.

Analysis of high vacuum systems using SINDA'85

NASA Technical Reports Server (NTRS)

Spivey, R. A.; Clanton, S. E.; Moore, J. D.

1993-01-01

The theory, algorithms, and test data correlation analysis of a math model developed to predict performance of the Space Station Freedom Vacuum Exhaust System are presented. The theory used to predict the flow characteristics of viscous, transition, and molecular flow is presented in detail. Development of user subroutines which predict the flow characteristics in conjunction with the SINDA'85/FLUINT analysis software are discussed. The resistance-capacitance network approach with application to vacuum system analysis is demonstrated and results from the model are correlated with test data. The model was developed to predict the performance of the Space Station Freedom Vacuum Exhaust System. However, the unique use of the user subroutines developed in this model and written into the SINDA'85/FLUINT thermal analysis model provides a powerful tool that can be used to predict the transient performance of vacuum systems and gas flow in tubes of virtually any geometry. This can be accomplished using a resistance-capacitance (R-C) method very similar to the methods used to perform thermal analyses.

Transistor Radio Receivers; Radio and Television Service, Intermediate: 9785.04.

ERIC Educational Resources Information Center

Dade County Public Schools, Miami, FL.

The course outlined is one of the required courses in the Radio and Television Service Curriculum. Mastery of the skills in Basic Radio Circuits and Vacuum Tube AM Troubleshooting (9785.03) is a prerequisite. Eight blocks of instruction are divided into several units each. The instruction blocks are: orientation, fundamentals of transistor…

Optimized photonic gauge of extreme high vacuum with Petawatt lasers

NASA Astrophysics Data System (ADS)

Paredes, Ángel; Novoa, David; Tommasini, Daniele; Mas, Héctor

2014-03-01

One of the latest proposed applications of ultra-intense laser pulses is their possible use to gauge extreme high vacuum by measuring the photon radiation resulting from nonlinear Thomson scattering within a vacuum tube. Here, we provide a complete analysis of the process, computing the expected rates and spectra, both for linear and circular polarizations of the laser pulses, taking into account the effect of the time envelope in a slowly varying envelope approximation. We also design a realistic experimental configuration allowing for the implementation of the idea and compute the corresponding geometric efficiencies. Finally, we develop an optimization procedure for this photonic gauge of extreme high vacuum at high repetition rate Petawatt and multi-Petawatt laser facilities, such as VEGA, JuSPARC and ELI.

Double wall vacuum tubing and method of manufacture

DOEpatents

Stahl, Charles R.; Gibson, Michael A.; Knudsen, Christian W.

1989-01-01

An evacuated double wall tubing is shown together with a method for the manufacture of such tubing which includes providing a first pipe of predetermined larger diameter and a second pipe having an O.D. substantially smaller than the I.D. of the first pipe. An evacuation opening is then in the first pipe. The second pipe is inserted inside the first pipe with an annular space therebetween. The pipes are welded together at one end. A stretching tool is secured to the other end of the second pipe after welding. The second pipe is then prestressed mechanically with the stretching tool an amount sufficient to prevent substantial buckling of the second pipe under normal operating conditions of the double wall pipe. The other ends of the first pipe and the prestressed second pipe are welded together, preferably by explosion welding, without the introduction of mechanical spacers between the pipes. The annulus between the pipes is evacuated through the evacuation opening, and the evacuation opening is finally sealed. The first pipe is preferably of steel and the second pipe is preferably of titanium. The pipes may be of a size and wall thickness sufficient for the double wall pipe to be structurally load bearing or may be of a size and wall thickness insufficient for the double wall pipe to be structurally load bearing, and the double wall pipe positioned with a sliding fit inside a third pipe of a load-bearing size.

Leakage and field emission in side-gate graphene field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Di Bartolomeo, A., E-mail: dibant@sa.infn.it; Iemmo, L.; Romeo, F.

We fabricate planar graphene field-effect transistors with self-aligned side-gate at 100 nm from the 500 nm wide graphene conductive channel, using a single lithographic step. We demonstrate side-gating below 1 V with conductance modulation of 35% and transconductance up to 0.5 mS/mm at 10 mV drain bias. We measure the planar leakage along the SiO{sub 2}/vacuum gate dielectric over a wide voltage range, reporting rapidly growing current above 15 V. We unveil the microscopic mechanisms driving the leakage, as Frenkel-Poole transport through SiO{sub 2} up to the activation of Fowler-Nordheim tunneling in vacuum, which becomes dominant at higher voltages. We report a field-emission current densitymore » as high as 1 μA/μm between graphene flakes. These findings are important for the miniaturization of atomically thin devices.« less

Tuning the threshold voltage of carbon nanotube transistors by n-type molecular doping for robust and flexible complementary circuits

PubMed Central

Wang, Huiliang; Wei, Peng; Li, Yaoxuan; Han, Jeff; Lee, Hye Ryoung; Naab, Benjamin D.; Liu, Nan; Wang, Chenggong; Adijanto, Eric; Tee, Benjamin C.-K.; Morishita, Satoshi; Li, Qiaochu; Gao, Yongli; Cui, Yi; Bao, Zhenan

2014-01-01

Tuning the threshold voltage of a transistor is crucial for realizing robust digital circuits. For silicon transistors, the threshold voltage can be accurately controlled by doping. However, it remains challenging to tune the threshold voltage of single-wall nanotube (SWNT) thin-film transistors. Here, we report a facile method to controllably n-dope SWNTs using 1H-benzoimidazole derivatives processed via either solution coating or vacuum deposition. The threshold voltages of our polythiophene-sorted SWNT thin-film transistors can be tuned accurately and continuously over a wide range. Photoelectron spectroscopy measurements confirmed that the SWNT Fermi level shifted to the conduction band edge with increasing doping concentration. Using this doping approach, we proceeded to fabricate SWNT complementary inverters by inkjet printing of the dopants. We observed an unprecedented noise margin of 28 V at VDD = 80 V (70% of 1/2VDD) and a gain of 85. Additionally, robust SWNT complementary metal−oxide−semiconductor inverter (noise margin 72% of 1/2VDD) and logic gates with rail-to-rail output voltage swing and subnanowatt power consumption were fabricated onto a highly flexible substrate. PMID:24639537

Critically safe vacuum pickup for use in wet or dry cleanup of radioactive materials

DOEpatents

Zeren, Joseph D.

1994-01-01

A vacuum pickup of critically safe quantity and geometric shape is used in cleanup of radioactive materials. Collected radioactive material is accumulated in four vertical, parallel, equally spaced canisters arranged in a cylinder configuration. Each canister contains a filter bag. An upper intake manifold includes four 90 degree spaced, downward facing nipples. Each nipple communicates with the top of a canister. The bottom of each canister communicates with an exhaust manifold comprising four radially extending tubes that meet at the bottom of a centrally located vertical cylinder. The top of the central cylinder terminates at a motor/fan power head. A removable HEPA filter is located intermediate the top of the central cylinder and the power head. Four horizontal bypass tubes connect the top of the central cylinder to the top of each of the canisters. Air enters the vacuum cleaner via a hose connected to the intake manifold. Air then travels down the canisters, where particulate material is accumulated in generally equal quantities in each filter bag. Four air paths of bag filtered air then pass radially inward to the bottom of the central cylinder. Air moves up the central cylinder, through the HEPA filter, through a vacuum fan compartment, and exits the vacuum cleaner. A float air flow valve is mounted at the top of the central cylinder. When liquid accumulates to a given level within the central cylinder, the four bypass tubes, and the four canisters, suction is terminated by operation of the float valve.

Vacuum packing: a model system for laboratory-scale silage fermentations.

PubMed

Johnson, H E; Merry, R J; Davies, D R; Kell, D B; Theodorou, M K; Griffith, G W

2005-01-01

To determine the utility of vacuum-packed polythene bags as a convenient, flexible and cost-effective alternative to fixed volume glass vessels for lab-scale silage studies. Using perennial ryegrass or red clover forage, similar fermentations (as assessed by pH measurement) occurred in glass tube and vacuum-packed silos over a 35-day period. As vacuum-packing devices allow modification of initial packing density, the effect of four different settings (initial packing densities of 0.397, 0.435, 0.492 and 0.534 g cm(-3)) on the silage fermentation over 16 days was examined. Significant differences in pH decline and lactate accumulation were observed at different vacuum settings. Gas accumulation was apparent within all bags and changes in bag volume with time was observed to vary according to initial packing density. Vacuum-packed silos do provide a realistic model system for lab-scale silage fermentations. Use of vacuum-packed silos holds potential for lab-scale evaluations of silage fermentations, allowing higher throughput of samples, more consistent packing as well as the possibility of investigating the effects of different initial packing densities and use of different wrapping materials.

Mercury Vacuum Cleaner, Operational Test and Evaluation

DTIC Science & Technology

1981-03-01

Indirect readings were obtained by air sampling with hopcalite tubes and subsequent analysis by the USAF OEHL Analytical Services Division. - r...during the operational and storage modes of the MRS-3 vacuum. During the operational mode, indirect ( hopcalite ) air sampling was periodically taken at...from the top and bottom sides of the HEPA and charcoal filter. During the storage mode, indirect ( hopcalite and dosimeter coil) air sampling was

Copper atomic-scale transistors.

PubMed

Xie, Fangqing; Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen; Schimmel, Thomas

2017-01-01

We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO 4 + H 2 SO 4 ) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and -170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes ( U bias ) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1 G 0 ( G 0 = 2e 2 /h; with e being the electron charge, and h being Planck's constant) or 2 G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors.

Copper atomic-scale transistors

PubMed Central

Kavalenka, Maryna N; Röger, Moritz; Albrecht, Daniel; Hölscher, Hendrik; Leuthold, Jürgen

2017-01-01

We investigated copper as a working material for metallic atomic-scale transistors and confirmed that copper atomic-scale transistors can be fabricated and operated electrochemically in a copper electrolyte (CuSO4 + H2SO4) in bi-distilled water under ambient conditions with three microelectrodes (source, drain and gate). The electrochemical switching-on potential of the atomic-scale transistor is below 350 mV, and the switching-off potential is between 0 and −170 mV. The switching-on current is above 1 μA, which is compatible with semiconductor transistor devices. Both sign and amplitude of the voltage applied across the source and drain electrodes (U bias) influence the switching rate of the transistor and the copper deposition on the electrodes, and correspondingly shift the electrochemical operation potential. The copper atomic-scale transistors can be switched using a function generator without a computer-controlled feedback switching mechanism. The copper atomic-scale transistors, with only one or two atoms at the narrowest constriction, were realized to switch between 0 and 1G 0 (G 0 = 2e2/h; with e being the electron charge, and h being Planck’s constant) or 2G 0 by the function generator. The switching rate can reach up to 10 Hz. The copper atomic-scale transistor demonstrates volatile/non-volatile dual functionalities. Such an optimal merging of the logic with memory may open a perspective for processor-in-memory and logic-in-memory architectures, using copper as an alternative working material besides silver for fully metallic atomic-scale transistors. PMID:28382242

Fundamental investigation of vacuum PD tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suyama, M.; Hirano, K.; Asakura, N.

1994-08-01

As a fundamental study of photodiodes (PDs) for electron bombardment, two types of PDs have been experimentally investigated to be applied in electron tubes. A PD bombarded from the front surface (FB-PD), where pn junction of planer structure existed, was evaluated to measure fast response characteristics such as 2.1ns in rise time, however, more than an order of magnitude increase of dark current was also confirmed after a long term stability test of 1,000 hours. On the other hand, a PD bombarded by electrons from the rear surface (RB-PD) showed no increase of dark current after the stability test andmore » fast rise time of 2.7ns. However, it was clarified that the rise time of RB-PD depended on applied voltage to the PD, and applied voltage of 200 V was necessary to achieve such fast response. Since it was a much higher voltage than expected, some modifications may be necessary to achieve fast response with lower applied voltage, considering the yield of the PDs. Comparison of two types of PDs on some other characteristics are discussed. Preliminary test results of an electron bombardment APD are also discussed.« less

A Low Cost Traveling Wave Tube for Wireless Communications

NASA Technical Reports Server (NTRS)

Vancil, Bernard Kenneth; Wintucky, Edwin G.; Williams, W. D. (Technical Monitor)

2002-01-01

Demand for high data rate wireless communications is pushing up amplifier power, bandwidth and frequency requirements. Some systems are using vacuum electron devices again because solid-state power amplifiers are not able to efficiently meet the new requirements. The traveling wave tube is the VED of choice because of its excellent broadband capability as well as high power efficiency and frequency. But TWTs are very expensive on a per watt basis below about 200 watts of output power. We propose a new traveling wave tube that utilizes cathode ray tube construction technology and electrostatic focusing. We believe the tube can be built in quantity for under $1,000 each. We discuss several traveling wave tube slow wave circuits that lend themselves to the new construction. We will present modeling results and data on prototype devices.

Simple constant-current-regulated power supply

NASA Technical Reports Server (NTRS)

Priebe, D. H. E.; Sturman, J. C.

1977-01-01

Supply incorporates soft-start circuit that slowly ramps current up to set point at turn-on. Supply consists of full-wave rectifier, regulating pass transistor, current feedback circuit, and quad single-supply operational-amplifier circuit providing control. Technique is applicable to any system requiring constant dc current, such as vacuum tube equipment, heaters, or battery charges; it has been used to supply constant current for instrument calibration.

Development and quality assessments of commercial heat production of ATF FeCrAl tubes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yamamoto, Yukinori

2015-09-01

Development and quality assessment of the 2 nd generation ATF FeCrAl tube production with commercial manufacturers were conducted. The manufacturing partners include Sophisticated Alloys, Inc. (SAI), Butler, PA for FeCrAl alloy casting via vacuum induction melting, Oak Ridge National Laboratory (ORNL) for extrusion process to prepare the master bars/tubes to be tube-drawn, and Rhenium Alloys, Inc. (RAI), North Ridgeville, OH, for tube-drawing process. The masters bars have also been provided to Los Alamos National Laboratory (LANL) who works with Century Tubes, Inc., (CTI), San Diego, CA, as parallel tube production effort under the current program.

Construction of vacuum system for Tristan accumulation ring

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ishimaru, H.; Horikoshi, G.; Kobayashi, M.

1983-08-01

An all aluminum-alloy vacuum system for the TRISTAN accumulation ring is now under construction. Aluminum and aluminum alloys are preferred materials for ultrahigh vacuum systems of large electron storage rings because of their good thermal conductivity, extremely low outgassing rate, and low residual radioactivity. Vacuum beam chambers for the dipole and quadrupole magnets are extruded using porthole dies. The aluminum alloy 6063-T6 provides superior performance in extrusion. For ultrahigh vacuum performance, a special extrusion technique is applied which, along with the outgassing procedure used, is described in detail. Aluminum alloy 3004 seamless elliptical bellows are inserted between the dipole andmore » quadrupole magnet chambers. These bellows are produced by the hydraulic forming of a seamless tube. The seamless bellows and the beam chambers are joined by fully automatic welding. The ceramic chambers for the kicker magnets, the fast bump magnets, and the slow beam intensity monitor are inserted in the aluminum alloy beam chambers. The ceramic chamber (98% alumina) and elliptical bellows are brazed with brazing sheets (4003-3003-4003) in a vacuum furnace. The brazing technique is described. The inner surface of the ceramic chamber is coated with a TiMo alloy by vacuum evaporation to permit a smooth flow of the RF wall current. Other suitable aluminum alloy components, including fittings, feedthroughs, gauges, optical windows, sputter ion pumps, turbomolecular pumps, and valves have been developed; their fabrication is described.« less

Realization of Molecular-Based Transistors.

PubMed

Richter, Shachar; Mentovich, Elad; Elnathan, Roey

2018-06-06

Molecular-based devices are widely considered as significant candidates to play a role in the next generation of "post-complementary metal-oxide-semiconductor" devices. In this context, molecular-based transistors: molecular junctions that can be electrically gated-are of particular interest as they allow new modes of operation. The properties of molecular transistors composed of a single- or multimolecule assemblies, focusing on their practicality as real-world devices, concerning industry demands and its roadmap are compared. Also, the capability of the gate electrode to modulate the molecular transistor characteristics efficiently is addressed, showing that electrical gating can be easily facilitated in single molecular transistors and that gating of transistor composed of molecular assemblies is possible if the device is formed vertically. It is concluded that while the single-molecular transistor exhibits better performance on the lab-scale, its realization faces signifacant challenges when compared to those faced by transistors composed of a multimolecule assembly. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Development of a 30-cm ion thruster thermal-vacuum power processor

NASA Technical Reports Server (NTRS)

Herron, B. G.

1976-01-01

The 30-cm Hg electron-bombardment ion thruster presently under development has reached engineering model status and is generally accepted as the prime propulsion thruster module to be used on the earliest solar electric propulsion missions. This paper presents the results of a related program to develop a transistorized 3-kW Thermal-Vacuum Breadboard (TVBB) Power Processor for this thruster. Emphasized in the paper are the implemented electrical and mechanical designs as well as the resultant system performance achieved over a range of test conditions. In addition, design modifications affording improved performance are identified and discussed.

Test bench HEATREC for heat loss measurement on solar receiver tubes

NASA Astrophysics Data System (ADS)

Márquez, José M.; López-Martín, Rafael; Valenzuela, Loreto; Zarza, Eduardo

2016-05-01

In Solar Thermal Electricity (STE) plants the thermal energy of solar radiation is absorbed by solar receiver tubes (HCEs) and it is transferred to a heat transfer fluid. Therefore, heat losses of receiver tubes have a direct influence on STE plants efficiency. A new test bench called HEATREC has been developed by Plataforma Solar de Almería (PSA) in order to determinate the heat losses of receiver tubes under laboratory conditions. The innovation of this test bench consists in the possibility to determine heat losses under controlled vacuum.

Evolvable circuit with transistor-level reconfigurability

NASA Technical Reports Server (NTRS)

Stoica, Adrian (Inventor); Salazar-Lazaro, Carlos Harold (Inventor)

2004-01-01

An evolvable circuit includes a plurality of reconfigurable switches, a plurality of transistors within a region of the circuit, the plurality of transistors having terminals, the plurality of transistors being coupled between a power source terminal and a power sink terminal so as to be capable of admitting power between the power source terminal and the power sink terminal, the plurality of transistors being coupled so that every transistor terminal to transistor terminal coupling within the region of the circuit comprises a reconfigurable switch.

Interband Lateral Resonant Tunneling Transistor.

DTIC Science & Technology

1994-11-14

INTERBAND LATERAL RESONANT TUNNELING TRANSISTOR 10 BACKGROUND OF THE INVENTION Field of the Invention This invention pertains to a tunneling transistor...and in 15 particular to an interband lateral resonant tunneling transistor. Description of Related Art Conventional semiconductor technologies are... interband lateral resonant tunneling transistor along the cross-section B-B of Figure 2c. Figure 4 is another preferred embodiment cross-sectional 20

Insufficient filling of vacuum tubes as a cause of microhemolysis and elevated serum lactate dehydrogenase levels. Use of a data-mining technique in evaluation of questionable laboratory test results.

PubMed

Tamechika, Yoshie; Iwatani, Yoshinori; Tohyama, Kaoru; Ichihara, Kiyoshi

2006-01-01

Experienced physicians noted unexpectedly elevated concentrations of lactate dehydrogenase in some patient samples, but quality control specimens showed no bias. To evaluate this problem, we used a "latent reference individual extraction method", designed to obtain reference intervals from a laboratory database by excluding individuals who have abnormal results for basic analytes other than the analyte in question, in this case lactate dehydrogenase. The reference interval derived for the suspected year was 264-530 U/L, while that of the previous year was 248-495 U/L. The only change we found was the introduction of an order entry system, which requests precise sampling volumes rather than complete filling of vacuum tubes. The effect of vacuum persistence was tested using ten freshly drawn blood samples. Compared with complete filling, 1/5 filling resulted in average elevations of lactate dehydrogenase, aspartic aminotransferase, and potassium levels of 8.0%, 3.8%, and 3.4%, respectively (all p<0.01). Microhemolysis was confirmed using a urine stick method. The length of time before centrifugation determined the degree of hemolysis, while vacuum during centrifugation did not affect it. Microhemolysis is the probable cause of the suspected pseudo-elevation noted by the physicians. Data-mining methodology represents a valuable tool for monitoring long-term bias in laboratory results.

High-performance vertical organic transistors.

PubMed

Kleemann, Hans; Günther, Alrun A; Leo, Karl; Lüssem, Björn

2013-11-11

Vertical organic thin-film transistors (VOTFTs) are promising devices to overcome the transconductance and cut-off frequency restrictions of horizontal organic thin-film transistors. The basic physical mechanisms of VOTFT operation, however, are not well understood and VOTFTs often require complex patterning techniques using self-assembly processes which impedes a future large-area production. In this contribution, high-performance vertical organic transistors comprising pentacene for p-type operation and C60 for n-type operation are presented. The static current-voltage behavior as well as the fundamental scaling laws of such transistors are studied, disclosing a remarkable transistor operation with a behavior limited by injection of charge carriers. The transistors are manufactured by photolithography, in contrast to other VOTFT concepts using self-assembled source electrodes. Fluorinated photoresist and solvent compounds allow for photolithographical patterning directly and strongly onto the organic materials, simplifying the fabrication protocol and making VOTFTs a prospective candidate for future high-performance applications of organic transistors. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fully Digital Arrays of Silicon Photomultipliers (dSiPM) - a Scalable Alternative to Vacuum Photomultiplier Tubes (PMT)

NASA Astrophysics Data System (ADS)

Haemisch, York; Frach, Thomas; Degenhardt, Carsten; Thon, Andreas

Silicon Photomultipliers (SiPMs) have emerged as promising alternative to fast vacuum photomultiplier tubes (PMT). A fully digital implementation of the Silicon Photomultiplier (dSiPM) has been developed in order to overcome the deficiencies and limitations of the so far only analog SiPMs (aSiPMs). Our sensor is based on arrays of single photon avalanche photodiodes (SPADs) integrated in a standard CMOS process. Photons are detected directly by sensing the voltage at the SPAD anode using a dedicated cell electronics block next to each diode. This block also contains active quenching and recharge circuits as well as a one bit memory for the selective inhibit of detector cells. A balanced trigger network is used to propagate the trigger signal from all cells to the integrated time-to-digital converter. In consequence, photons are detected and counted as digital signals, thus making the sensor less susceptible to temperature variations and electronic noise. The integration with CMOS logic provides the added benefit of low power consumption and possible integration of data post-processing directly in the sensor. In this overview paper, we discuss the sensor architecture together with its characteristics with a focus on scalability and practicability aspects for applications in medical imaging, high energy- and astrophysics.

THERMOCOUPLE VACUUM GAUGE

DOEpatents

Price, G.W.

1954-08-01

A protector device is described for use in controlling the pressure within a cyclotron. In particular, an electrical circuit functions to actuate a vacuum pump when a predetermined low pressure is reached and disconnect the pump when the pressure increases abcve a certain value. The principal feature of the control circuit lies in the use of a voltage divider network at the input to a relay control tube comprising two parallel, adjustable resistances wherein one resistor is switched into the circuit when the relay connects the pump to a power source. With this arrangement the relay is energized at one input level received from a sensing element within the cyclotron chamber and is de-energized when a second input level, representing the higher pressure limit, is reached.

The NASA, Marshall Space Flight Center drop tube user's manual

NASA Technical Reports Server (NTRS)

Rathz, Thomas J.; Robinson, Michael B.

1990-01-01

A comprehensive description of the structural and instrumentation hardware and the experimental capabilities of the 105-meter Marshall Space Flight Center Drop Tube Facility is given. This document is to serve as a guide to the investigator who wishes to perform materials processing experiments in the Drop Tube. Particular attention is given to the Tube's hardware to which an investigator must interface to perform experiments. This hardware consists of the permanent structural hardware (with such items as vacuum flanges), and the experimental hardware (with the furnaces and the sample insertion devices). Two furnaces, an electron-beam and an electromagnetic levitator, are currently used to melt metallic samples in a process environment that can range from 10(exp -6) Torr to 1 atmosphere. Details of these furnaces, the processing environment gases/vacuum, the electrical power, and data acquisition capabilities are specified to allow an investigator to design his/her experiment to maximize successful results and to reduce experimental setup time on the Tube. Various devices used to catch samples while inflicting minimum damage and to enhance turnaround time between experiments are described. Enough information is provided to allow an investigator who wishes to build his/her own furnace or sample catch devices to easily interface it to the Tube. The experimental instrumentation and data acquisition systems used to perform pre-drop and in-flight measurements of the melting and solidification process are also detailed. Typical experimental results are presented as an indicator of the type of data that is provided by the Drop Tube Facility. A summary bibliography of past Drop Tube experiments is provided, and an appendix explaining the noncontact temperature determination of free-falling drops is provided. This document is to be revised occasionally as improvements to the Facility are made and as the summary bibliography grows.

A digital miniature x-ray tube with a high-density triode carbon nanotube field emitter

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeong, Jin-Woo; Kang, Jun-Tae; Choi, Sungyoul

2013-01-14

We have fabricated a digital miniature x-ray tube (6 mm in diameter and 32 mm in length) with a high-density triode carbon nanotube (CNT) field emitter for special x-ray applications. The triode CNT emitter was densely formed within a diameter of below 4 mm with the focusing-functional gate. The brazing process enables us to obtain and maintain a desired vacuum level for the reliable electron emission from the CNT emitters after the vacuum packaging. The miniature x-ray tube exhibited a stable and reliable operation over 250 h in a pulse mode at an anode voltage of above 25 kV.

Tube suction test for evaluating durability of cementitiously stabilized soils.

DOT National Transportation Integrated Search

2011-06-01

In a comprehensive laboratory study, different tests namely, unconfined compressive strength (UCS) at the end of freeze-thaw/wet-dry (F-T/W-D) cycles, resilient modulus (Mr) at the end of F-T/W-D cycles, vacuum saturation, tube suction, and moisture ...

Tube suction test for evaluating durability of cementitiously stabilized soils.

DOT National Transportation Integrated Search

2011-06-01

In a comprehensive laboratory study, different tests namely, unconfined compressive strength (UCS) at the end of freeze-thaw/wet-dry (FT/ : W-D) cycles, resilient modulus (Mr) at the end of F-T/W-D cycles, vacuum saturation, tube suction, and moistur...

Vertical organic transistors.

PubMed

Lüssem, Björn; Günther, Alrun; Fischer, Axel; Kasemann, Daniel; Leo, Karl

2015-11-11

Organic switching devices such as field effect transistors (OFETs) are a key element of future flexible electronic devices. So far, however, a commercial breakthrough has not been achieved because these devices usually lack in switching speed (e.g. for logic applications) and current density (e.g. for display pixel driving). The limited performance is caused by a combination of comparatively low charge carrier mobilities and the large channel length caused by the need for low-cost structuring. Vertical Organic Transistors are a novel technology that has the potential to overcome these limitations of OFETs. Vertical Organic Transistors allow to scale the channel length of organic transistors into the 100 nm regime without cost intensive structuring techniques. Several different approaches have been proposed in literature, which show high output currents, low operation voltages, and comparatively high speed even without sub-μm structuring technologies. In this review, these different approaches are compared and recent progress is highlighted.

Numerical Simulation of the Permeable Base Transistor.

DTIC Science & Technology

1987-05-04

chi report has ben reviWed d saprovco for Ptb"Ic r!a4e , -AW AFR 190.12.Distrquti.n Is unlimitedMATTH-: J. KERPERChief# Technca I.1omt DivisIoM 87 5 21...significant clustering within the vicinity of the base region. Further, a cursory examination of the unscaled contours (figure 6) and the depletion...be published by the authors. 8. E.L. Chaffee, Theory of Thermionic Vacuum Tubes, McGraw-Hill (1933), Cf figures 75 and 76. 9. Y. Avano, K . Tomizawa and

Miniature shock tube for laser driven shocks.

PubMed

Busquet, Michel; Barroso, Patrice; Melse, Thierry; Bauduin, Daniel

2010-02-01

We describe in this paper the design of a miniature shock tube (smaller than 1 cm(3)) that can be placed in a vacuum vessel and allows transverse optical probing and longitudinal backside extreme ultraviolet emission spectroscopy in the 100-500 A range. Typical application is the study of laser launched radiative shocks, in the framework of what is called "laboratory astrophysics."

A reconfigurable image tube using an external electronic image readout

NASA Astrophysics Data System (ADS)

Lapington, J. S.; Howorth, J. R.; Milnes, J. S.

2005-08-01

We have designed and built a sealed tube microchannel plate (MCP) intensifier for optical/NUV photon counting applications suitable for 18, 25 and 40 mm diameter formats. The intensifier uses an electronic image readout to provide direct conversion of event position into electronic signals, without the drawbacks associated with phosphor screens and subsequent optical detection. The Image Charge technique is used to remove the readout from the intensifier vacuum enclosure, obviating the requirement for additional electrical vacuum feedthroughs and for the readout pattern to be UHV compatible. The charge signal from an MCP intensifier is capacitively coupled via a thin dielectric vacuum window to the electronic image readout, which is external to the sealed intensifier tube. The readout pattern is a separate item held in proximity to the dielectric window and can be easily detached, making the system easily reconfigurable. Since the readout pattern detects induced charge and is external to the tube, it can be constructed as a multilayer, eliminating the requirement for narrow insulator gaps and allowing it to be constructed using standard PCB manufacturing tolerances. We describe two readout patterns, the tetra wedge anode (TWA), an optimized 4 electrode device similar to the wedge and strip anode (WSA) but with a factor 2 improvement in resolution, and an 8 channel high speed 50 ohm device, both manufactured as multilayer PCBs. We present results of the detector imaging performance, image resolution, linearity and stability, and discuss the development of an integrated readout and electronics device based on these designs.

Gas propagation following a sudden loss of vacuum in a pipe cooled by He I and He II.

NASA Astrophysics Data System (ADS)

Garceau, N.; Guo, W.; Dodamead, T.

2017-12-01

Many cryogenic systems around the world are concerned with the sudden catastrophic loss of vacuum for cost, preventative damage, safety or other reasons. The experiments in this paper were designed to simulate the sudden vacuum break in the beam-line pipe of a liquid helium cooled superconducting particle accelerator. This paper expands previous research conducted at the National High Magnetic Field Laboratory and evaluates the differences between normal helium (He I) and superfluid helium (He II). For the experiments, a straight pipe and was evacuated and immersed in liquid helium at 4.2 K and below 2.17 K. Vacuum loss was simulated by opening a solenoid valve on a buffer tank filled nitrogen gas. Gas front arrival was observed by a temperature rise of the tube. Preliminary results suggested that the speed of the gas front through the experiment decreased exponentially along the tube for both normal liquid helium and super-fluid helium. The system was modified to a helical pipe system to increase propagation length. Testing and analysis on these two systems revealed there was minor difference between He I and He II despite the difference between the two distinct helium phases heat transfer mechanisms: convection vs thermal counterflow. Furthermore, the results indicated that the temperature of the tube wall above the LHe bath also plays a significant role in the initial front propagation. More systematic measurements are planned in with the helical tube system to further verify the results.

Design and calibration of a vacuum compatible scanning tunneling microscope

NASA Technical Reports Server (NTRS)

Abel, Phillip B.

1990-01-01

A vacuum compatible scanning tunneling microscope was designed and built, capable of imaging solid surfaces with atomic resolution. The single piezoelectric tube design is compact, and makes use of sample mounting stubs standard to a commercially available surface analysis system. Image collection and display is computer controlled, allowing storage of images for further analysis. Calibration results from atomic scale images are presented.

A versatile approach to vacuum injection casting for materials research and development.

PubMed

Xu, Donghua; Xu, Yifan

2017-03-01

Vacuum injection casting (VIC) is important for research and development (R&D) of materials that are prone to oxidation at high temperatures, particularly metals and metallic alloys (e.g., metallic glasses and high entropy alloys). VIC in R&D laboratories often involves initial melting/alloying in a prior step, transporting the sample to a dedicated vacuum chamber, re-melting the sample in a quartz tube, and finally injecting the melt with an inert gas to a dedicated mold. Here we present a new approach to laboratory VIC that requires no sample transfer (for a variety of materials), no dedicated vacuum chamber/space nor dedicated mold, and hence provides more versatility and higher efficiency and yet lowers the capital equipment cost. Our approach takes advantage of the exceptional portability, thermal and chemical stability, and thermoplastic processability of quartz glass and uses quartz tubes for all the melting, re-melting, injection casting, and molding. In addition, our approach includes oxygen gettering to remove residual oxygen for all the steps and allows for slow or fast cooling (e.g., water quenching) upon injection. This paper focuses on the design, the procedures, and the versatile features of this new approach while also demonstrating the practical implementation of this approach and computational modeling of the heat transfer and the cooling rates for two exemplary cases. The new approach is expected to bring notable expedition to sample fabrication and materials discovery, as well as wider adoption of vacuum injection casting in materials science and condensed matter physics research laboratories.

A versatile approach to vacuum injection casting for materials research and development

NASA Astrophysics Data System (ADS)

Xu, Donghua; Xu, Yifan

2017-03-01

Vacuum injection casting (VIC) is important for research and development (R&D) of materials that are prone to oxidation at high temperatures, particularly metals and metallic alloys (e.g., metallic glasses and high entropy alloys). VIC in R&D laboratories often involves initial melting/alloying in a prior step, transporting the sample to a dedicated vacuum chamber, re-melting the sample in a quartz tube, and finally injecting the melt with an inert gas to a dedicated mold. Here we present a new approach to laboratory VIC that requires no sample transfer (for a variety of materials), no dedicated vacuum chamber/space nor dedicated mold, and hence provides more versatility and higher efficiency and yet lowers the capital equipment cost. Our approach takes advantage of the exceptional portability, thermal and chemical stability, and thermoplastic processability of quartz glass and uses quartz tubes for all the melting, re-melting, injection casting, and molding. In addition, our approach includes oxygen gettering to remove residual oxygen for all the steps and allows for slow or fast cooling (e.g., water quenching) upon injection. This paper focuses on the design, the procedures, and the versatile features of this new approach while also demonstrating the practical implementation of this approach and computational modeling of the heat transfer and the cooling rates for two exemplary cases. The new approach is expected to bring notable expedition to sample fabrication and materials discovery, as well as wider adoption of vacuum injection casting in materials science and condensed matter physics research laboratories.

Design and fabrication of the vacuum systems for TPS pulsed septum magnets

NASA Astrophysics Data System (ADS)

Chan, C. K.; Chang, C. C.; Chen, C. L.; Yang, C. S.; Chen, C. S.; Lin, F. Y.; Chen, J. R.

2014-11-01

Three in-air pulsed septum magnets were developed to inject and extract electron beams for the 3 GeV synchrotron facility, the Taiwan Photon Source (TPS). The vacuum chamber is a novel combined aluminium-stainless steel design, using a bimetallic flange to connect the two material types. To evaluate the vacuum performances of these vacuum chambers, we set up a test bench at which we simultaneously measure the rates of thermal outgassing of the aluminium chamber and the septum tube with a throughput method. The test result indicates that the rate q72 of thermal outgassing measured after 1 day from baking at 150 °C was 1×10-13 mbar L s-1 cm-2. The magnetic leakage measurements show the combination of conductor slitting, magnetic shielding and the aluminium vacuum chamber reduce the peak value of the leakage field integral to ~10 G cm along the trajectory of the stored beam.

High Current Density Cathodes for Future Vacuum Electronics Applications

DTIC Science & Technology

2008-05-30

Tube - device for generating high levels of RF power DARPA Defense Advanced Research Agency PBG Photonic band gap W- Band 75-111 GHz dB Decibels GHz...Extended interaction klystron 1. Introduction All RF vacuum electron sources require a high quality electron beam for efficient operation. Research on...with long life. Pres- ently, only thermionic dispenser cathodes are practical for high power RF sources. Typical thermi- onic cathodes consists of a

Transistor-based particle detection systems and methods

DOEpatents

Jain, Ankit; Nair, Pradeep R.; Alam, Muhammad Ashraful

2015-06-09

Transistor-based particle detection systems and methods may be configured to detect charged and non-charged particles. Such systems may include a supporting structure contacting a gate of a transistor and separating the gate from a dielectric of the transistor, and the transistor may have a near pull-in bias and a sub-threshold region bias to facilitate particle detection. The transistor may be configured to change current flow through the transistor in response to a change in stiffness of the gate caused by securing of a particle to the gate, and the transistor-based particle detection system may configured to detect the non-charged particle at least from the change in current flow.

High Power Microwave Tubes: Basics and Trends, Volume 2

NASA Astrophysics Data System (ADS)

Kesari, Vishal; Basu, B. N.

2018-01-01

Volume 2 of the book begins with chapter 6, in which we have taken up conventional MWTs (such as TWTs, klystrons, including multi-cavity and multi-beam klystrons, klystron variants including reflex klystron, IOT, EIK, EIO and twystron, and crossed-field tubes, namely, magnetron, CFA and carcinotron). In chapter 7, we have taken up fast-wave tubes (such as gyrotron, gyro-BWO, gyro-klystron, gyro-TWT, CARM, SWCA, hybrid gyro-tubes and peniotron). In chapter 8, we discuss vacuum microelectronic tubes (such as klystrino module, THz gyrotron and clinotron BWO); plasma-assisted tubes (such as PWT, plasma-filled TWT, BWO, including PASOTRON, and gyrotron); and HPM (high power microwave) tubes (such as relativistic TWT, relativistic BWO, RELTRON (variant of relativistic klystron), relativistic magnetron, high power Cerenkov tubes including SWO, RDG or orotron, MWCG and MWDG, bremsstrahlung radiation type tube, namely, vircator, and M-type tube MILO). In Chapter 9, we provide handy information about the frequency and power ranges of common MWTs, although more such information is provided at relevant places in the rest of the book as and where necessary. Chapter 10 is an epilogue that sums up the authors' attempt to bring out the various aspects of the basics of and trends in high power MWTs.

A vacuum-operated pore-water extractor for estuarine and freshwater sediments

USGS Publications Warehouse

Winger, Parley V.; Lasier, Peter J.

1991-01-01

A vacuum-operated pore-water extractor for estuarine and freshwater sediments was developed and constructed from a fused-glass air stone attached with aquarium airline tubing to a 30 or 60 cc polypropylene syringe. Pore water is extracted by inserting the air stone into the sediment and creating a vacuum by retracting and bracing the syringe plunger. A hand-operated vacuum pump attached to a filtration flask was also evaluated as an alternative vacuum source. The volume and time to extract pore water varies with the number of devices and the sediment particle size. Extraction time is longer for fine sediments than for sandy sediments. Four liters of sediment generally yield between 500 and 1,500 mL of pore water. The sediment that surrounds and accumulates on the air stone acts as a filter, and, except for the first few milliliters, the collected pore water is clear. Because there is no exposure to air or avenue for escape, volatile compounds andin situ characteristics are retained in the extracted pore water.

High voltage power transistor development

NASA Technical Reports Server (NTRS)

Hower, P. L.

1981-01-01

Design considerations, fabrication procedures, and methods of evaluation for high-voltage power-transistor development are discussed. Technique improvements such as controlling the electric field at the surface and perserving lifetimes in the collector region which have advanced the state of the art in high-voltage transistors are discussed. These improvements can be applied directly to the development of 1200 volt, 200 ampere transistors.

Effects of vacuum rapid thermal annealing on the electrical characteristics of amorphous indium gallium zinc oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Hyun-Woo; Cho, Won-Ju

2018-01-01

We investigated the effects of vacuum rapid thermal annealing (RTA) on the electrical characteristics of amorphous indium gallium zinc oxide (a-IGZO) thin films. The a-IGZO films deposited by radiofrequency sputtering were subjected to vacuum annealing under various temperature and pressure conditions with the RTA system. The carrier concentration was evaluated by Hall measurement; the electron concentration of the a-IGZO film increased and the resistivity decreased as the RTA temperature increased under vacuum conditions. In a-IGZO thin-film transistors (TFTs) with a bottom-gate top-contact structure, the threshold voltage decreased and the leakage current increased as the vacuum RTA temperature increased. As the annealing pressure decreased, the threshold voltage decreased, and the leakage current increased. X-ray photoelectron spectroscopy indicated changes in the lattice oxygen and oxygen vacancies of the a-IGZO films after vacuum RTA. At higher annealing temperatures, the lattice oxygen decreased and oxygen vacancies increased, which suggests that oxygen was diffused out in a reduced pressure atmosphere. The formation of oxygen vacancies increased the electron concentration, which consequently increased the conductivity of the a-IGZO films and reduced the threshold voltage of the TFTs. The results showed that the oxygen vacancies and electron concentrations of the a-IGZO thin films changed with the vacuum RTA conditions and that high-temperature RTA treatment at low pressure converted the IGZO thin film to a conductor.

Controllable Hysteresis and Threshold Voltage of Single-Walled Carbon Nano-tube Transistors with Ferroelectric Polymer Top-Gate Insulators

PubMed Central

Sun, Yi-Lin; Xie, Dan; Xu, Jian-Long; Zhang, Cheng; Dai, Rui-Xuan; Li, Xian; Meng, Xiang-Jian; Zhu, Hong-Wei

2016-01-01

Double-gated field effect transistors have been fabricated using the SWCNT networks as channel layer and the organic ferroelectric P(VDF-TrFE) film spin-coated as top gate insulators. Standard photolithography process has been adopted to achieve the patterning of organic P(VDF-TrFE) films and top-gate electrodes, which is compatible with conventional CMOS process technology. An effective way for modulating the threshold voltage in the channel of P(VDF-TrFE) top-gate transistors under polarization has been reported. The introduction of functional P(VDF-TrFE) gate dielectric also provides us an alternative method to suppress the initial hysteresis of SWCNT networks and obtain a controllable ferroelectric hysteresis behavior. Applied bottom gate voltage has been found to be another effective way to highly control the threshold voltage of the networked SWCNTs based FETs by electrostatic doping effect. PMID:26980284

Silicon on insulator self-aligned transistors

DOEpatents

McCarthy, Anthony M.

2003-11-18

A method for fabricating thin-film single-crystal silicon-on-insulator (SOI) self-aligned transistors. Standard processing of silicon substrates is used to fabricate the transistors. Physical spaces, between the source and gate, and the drain and gate, introduced by etching the polysilicon gate material, are used to provide connecting implants (bridges) which allow the transistor to perform normally. After completion of the silicon substrate processing, the silicon wafer is bonded to an insulator (glass) substrate, and the silicon substrate is removed leaving the transistors on the insulator (glass) substrate. Transistors fabricated by this method may be utilized, for example, in flat panel displays, etc.

High power, high frequency, vacuum flange

DOEpatents

Felker, B.; McDaniel, M.R.

1993-03-23

An improved waveguide flange is disclosed for high power operation that helps prevent arcs from being initiated at the junctions between waveguide sections. The flanges at the end of the waveguide sections have counter bores surrounding the waveguide tubes. When the sections are bolted together the counter bores form a groove that holds a fully annealed copper gasket. Each counterbore has a beveled step that is specially configured to insure the gasket forms a metal-to-metal vacuum seal without gaps or sharp edges. The resultant inner surface of the waveguide is smooth across the junctions between waveguide sections, and arcing is prevented.

Solution-Processed Transistors Using Colloidal Nanocrystals with Composition-Matched Molecular "Solders": Approaching Single Crystal Mobility.

PubMed

Jang, Jaeyoung; Dolzhnikov, Dmitriy S; Liu, Wenyong; Nam, Sooji; Shim, Moonsub; Talapin, Dmitri V

2015-10-14

Crystalline silicon-based complementary metal-oxide-semiconductor transistors have become a dominant platform for today's electronics. For such devices, expensive and complicated vacuum processes are used in the preparation of active layers. This increases cost and restricts the scope of applications. Here, we demonstrate high-performance solution-processed CdSe nanocrystal (NC) field-effect transistors (FETs) that exhibit very high carrier mobilities (over 400 cm(2)/(V s)). This is comparable to the carrier mobilities of crystalline silicon-based transistors. Furthermore, our NC FETs exhibit high operational stability and MHz switching speeds. These NC FETs are prepared by spin coating colloidal solutions of CdSe NCs capped with molecular solders [Cd2Se3](2-) onto various oxide gate dielectrics followed by thermal annealing. We show that the nature of gate dielectrics plays an important role in soldered CdSe NC FETs. The capacitance of dielectrics and the NC electronic structure near gate dielectric affect the distribution of localized traps and trap filling, determining carrier mobility and operational stability of the NC FETs. We expand the application of the NC soldering process to core-shell NCs consisting of a III-V InAs core and a CdSe shell with composition-matched [Cd2Se3](2-) molecular solders. Soldering CdSe shells forms nanoheterostructured material that combines high electron mobility and near-IR photoresponse.

Single-transistor-clocked flip-flop

DOEpatents

Zhao, Peiyi; Darwish, Tarek; Bayoumi, Magdy

2005-08-30

The invention provides a low power, high performance flip-flop. The flip-flop uses only one clocked transistor. The single clocked transistor is shared by the first and second branches of the device. A pulse generator produces a clock pulse to trigger the flip-flop. In one preferred embodiment the device can be made as a static explicit pulsed flip-flop which employs only two clocked transistors.

Rigid indented cylindrical cathode for X-ray tube

DOEpatents

Hudgens, Claude R.

1985-01-01

A cathode assembly for a vacuum tube includes a wire filament, a straight bular anode parallel to and surrounding the wire filament, and insulating spacers for rigidly fastening the filament with respect to the anode, and with one side of the anode indented or flattened such that only one portion of the anode is heated to emitting temperatures by the filament.

Towards an emergent model of solitonic particles from non-trivial vacuum structure

NASA Astrophysics Data System (ADS)

Gillard, Adam B.; Gresnigt, Niels G.

2017-12-01

We motivate and introduce what we refer to as the principles of Lie-stability and Hopf-stability and see what the physical theories must look like. Lie-stability is needed on the classical side and Hopf-stability is needed on the quantum side. We implement these two principles together with Lie-deformations consistent with basic constraints on the classical kinematical variables to arrive at the form of a theory that identifies standard model fermions with quantum solitonic trefoil knotted flux tubes which emerge from a flux tube vacuum network. Moreover, twisted unknot fluxtubes form natural dark matter candidates

Vacuum force

NASA Astrophysics Data System (ADS)

Han, Yongquan

2015-03-01

To study on vacuum force, we must clear what is vacuum, vacuum is a space do not have any air and also ray. There is not exist an absolute the vacuum of space. The vacuum of space is relative, so that the vacuum force is relative. There is a certain that vacuum vacuum space exists. In fact, the vacuum space is relative, if the two spaces compared to the existence of relative vacuum, there must exist a vacuum force, and the direction of the vacuum force point to the vacuum region. Any object rotates and radiates. Rotate bend radiate- centripetal, gravity produced, relative gravity; non gravity is the vacuum force. Gravity is centripetal, is a trend that the objects who attracted wants to Centripetal, or have been do Centripetal movement. Any object moves, so gravity makes the object curve movement, that is to say, the radiation range curve movement must be in the gravitational objects, gravity must be existed in non vacuum region, and make the object who is in the region of do curve movement (for example: The earth moves around the sun), or final attracted in the form gravitational objects, and keep relatively static with attract object. (for example: objects on the earth moves but can't reach the first cosmic speed).

Complementary spin transistor using a quantum well channel.

PubMed

Park, Youn Ho; Choi, Jun Woo; Kim, Hyung-Jun; Chang, Joonyeon; Han, Suk Hee; Choi, Heon-Jin; Koo, Hyun Cheol

2017-04-20

In order to utilize the spin field effect transistor in logic applications, the development of two types of complementary transistors, which play roles of the n- and p-type conventional charge transistors, is an essential prerequisite. In this research, we demonstrate complementary spin transistors consisting of two types of devices, namely parallel and antiparallel spin transistors using InAs based quantum well channels and exchange-biased ferromagnetic electrodes. In these spin transistors, the magnetization directions of the source and drain electrodes are parallel or antiparallel, respectively, depending on the exchange bias field direction. Using this scheme, we also realize a complementary logic operation purely with spin transistors controlled by the gate voltage, without any additional n- or p-channel transistor.

Stability study of solution-processed zinc tin oxide thin-film transistors

NASA Astrophysics Data System (ADS)

Zhang, Xue; Ndabakuranye, Jean Pierre; Kim, Dong Wook; Choi, Jong Sun; Park, Jaehoon

2015-11-01

In this study, the environmental dependence of the electrical stability of solution-processed n-channel zinc tin oxide (ZTO) thin-film transistors (TFTs) is reported. Under a prolonged negative gate bias stress, a negative shift in threshold voltage occurs in atmospheric air, whereas a negligible positive shift in threshold voltage occurs under vacuum. In the positive bias-stress experiments, a positive shift in threshold voltage was invariably observed both in atmospheric air and under vacuum. In this study, the negative gate-bias-stress-induced instability in atmospheric air is explained through an internal potential in the ZTO semiconductor, which can be generated owing to the interplay between H2O molecules and majority carrier electrons at the surface of the ZTO film. The positive bias-stress-induced instability is ascribed to electron-trapping phenomenon in and around the TFT channel region, which can be further augmented in the presence of air O2 molecules. These results suggest that the interaction between majority carriers and air molecules will have crucial implications for a reliable operation of solution-processed ZTO TFTs. [Figure not available: see fulltext.

Low-frequency electronic noise in single-layer MoS2 transistors.

PubMed

Sangwan, Vinod K; Arnold, Heather N; Jariwala, Deep; Marks, Tobin J; Lauhon, Lincoln J; Hersam, Mark C

2013-09-11

Ubiquitous low-frequency 1/f noise can be a limiting factor in the performance and application of nanoscale devices. Here, we quantitatively investigate low-frequency electronic noise in single-layer transition metal dichalcogenide MoS2 field-effect transistors. The measured 1/f noise can be explained by an empirical formulation of mobility fluctuations with the Hooge parameter ranging between 0.005 and 2.0 in vacuum (<10(-5) Torr). The field-effect mobility decreased, and the noise amplitude increased by an order of magnitude in ambient conditions, revealing the significant influence of atmospheric adsorbates on charge transport. In addition, single Lorentzian generation-recombination noise was observed to increase by an order of magnitude as the devices were cooled from 300 to 6.5 K.

Trap density of states in small-molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Haas, Simon; Krellner, Cornelius; Mathis, Thomas; Batlogg, Bertram

2010-04-01

We show that it is possible to reach one of the ultimate goals of organic electronics: producing organic field-effect transistors with trap densities as low as in the bulk of single crystals. We studied the spectral density of localized states in the band gap [trap density of states (trap DOS)] of small-molecule organic semiconductors as derived from electrical characteristics of organic field-effect transistors or from space-charge-limited current measurements. This was done by comparing data from a large number of samples including thin-film transistors (TFT’s), single crystal field-effect transistors (SC-FET’s) and bulk samples. The compilation of all data strongly suggests that structural defects associated with grain boundaries are the main cause of “fast” hole traps in TFT’s made with vacuum-evaporated pentacene. For high-performance transistors made with small-molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric surface. In samples with very low trap densities, we sometimes observe a steep increase in the trap DOS very close (<0.15eV) to the mobility edge with a characteristic slope of 10-20 meV. It is discussed to what degree band broadening due to the thermal fluctuation of the intermolecular transfer integral is reflected in this steep increase in the trap DOS. Moreover, we show that the trap DOS in TFT’s with small-molecule semiconductors is very similar to the trap DOS in hydrogenated amorphous silicon even though polycrystalline films of small-molecules with van der Waals-type interaction on the one hand are compared with covalently bound amorphous silicon on the other hand.

TRANSISTOR HIGH VOLTAGE POWER SUPPLY

DOEpatents

Driver, G.E.

1958-07-15

High voltage, direct current power supplies are described for use with battery powered nuclear detection equipment. The particular advantages of the power supply described, are increased efficiency and reduced size and welght brought about by the use of transistors in the circuit. An important feature resides tn the employment of a pair of transistors in an alternatefiring oscillator circuit having a coupling transformer and other circuit components which are used for interconnecting the various electrodes of the transistors.

Photosensitive graphene transistors.

PubMed

Li, Jinhua; Niu, Liyong; Zheng, Zijian; Yan, Feng

2014-08-20

High performance photodetectors play important roles in the development of innovative technologies in many fields, including medicine, display and imaging, military, optical communication, environment monitoring, security check, scientific research and industrial processing control. Graphene, the most fascinating two-dimensional material, has demonstrated promising applications in various types of photodetectors from terahertz to ultraviolet, due to its ultrahigh carrier mobility and light absorption in broad wavelength range. Graphene field effect transistors are recognized as a type of excellent transducers for photodetection thanks to the inherent amplification function of the transistors, the feasibility of miniaturization and the unique properties of graphene. In this review, we will introduce the applications of graphene transistors as photodetectors in different wavelength ranges including terahertz, infrared, visible, and ultraviolet, focusing on the device design, physics and photosensitive performance. Since the device properties are closely related to the quality of graphene, the devices based on graphene prepared with different methods will be addressed separately with a view to demonstrating more clearly their advantages and shortcomings in practical applications. It is expected that highly sensitive photodetectors based on graphene transistors will find important applications in many emerging areas especially flexible, wearable, printable or transparent electronics and high frequency communications. © 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flow-Tube Investigations of Hypergolic Reactions of a Dicyanamide Ionic Liquid Via Tunable Vacuum Ultraviolet Aerosol Mass Spectrometry.

PubMed

Chambreau, Steven D; Koh, Christine J; Popolan-Vaida, Denisia M; Gallegos, Christopher J; Hooper, Justin B; Bedrov, Dmitry; Vaghjiani, Ghanshyam L; Leone, Stephen R

2016-10-07

The unusually high heats of vaporization of room-temperature ionic liquids (RTILs) complicate the utilization of thermal evaporation to study ionic liquid reactivity. Although effusion of RTILs into a reaction flow-tube or mass spectrometer is possible, competition between vaporization and thermal decomposition of the RTIL can greatly increase the complexity of the observed reaction products. In order to investigate the reaction kinetics of a hypergolic RTIL, 1-butyl-3-methylimidazolium dicyanamide (BMIM + DCA - ) was aerosolized and reacted with gaseous nitric acid, and the products were monitored via tunable vacuum ultraviolet photoionization time-of-flight mass spectrometry at the Chemical Dynamics Beamline 9.0.2 at the Advanced Light Source. Reaction product formation at m/z 42, 43, 44, 67, 85, 126, and higher masses was observed as a function of HNO 3 exposure. The identities of the product species were assigned to the masses on the basis of their ionization energies. The observed exposure profile of the m/z 67 signal suggests that the excess gaseous HNO 3 initiates rapid reactions near the surface of the RTIL aerosol. Nonreactive molecular dynamics simulations support this observation, suggesting that diffusion within the particle may be a limiting step. The mechanism is consistent with previous reports that nitric acid forms protonated dicyanamide species in the first step of the reaction.

Quantum Thermal Transistor.

PubMed

Joulain, Karl; Drevillon, Jérémie; Ezzahri, Younès; Ordonez-Miranda, Jose

2016-05-20

We demonstrate that a thermal transistor can be made up with a quantum system of three interacting subsystems, coupled to a thermal reservoir each. This thermal transistor is analogous to an electronic bipolar one with the ability to control the thermal currents at the collector and at the emitter with the imposed thermal current at the base. This is achieved by determining the heat fluxes by means of the strong-coupling formalism. For the case of three interacting spins, in which one of them is coupled to the other two, that are not directly coupled, it is shown that high amplification can be obtained in a wide range of energy parameters and temperatures. The proposed quantum transistor could, in principle, be used to develop devices such as a thermal modulator and a thermal amplifier in nanosystems.

Plasma sputtering robotic device for in-situ thick coatings of long, small diameter vacuum tubesa)

NASA Astrophysics Data System (ADS)

Hershcovitch, A.; Blaskiewicz, M.; Brennan, J. M.; Custer, A.; Dingus, A.; Erickson, M.; Fischer, W.; Jamshidi, N.; Laping, R.; Liaw, C.-J.; Meng, W.; Poole, H. J.; Todd, R.

2015-05-01

A novel robotic plasma magnetron mole with a 50 cm long cathode was designed, fabricated, and operated. The reason for this endeavor is to alleviate the problems of unacceptable resistive heating of stainless steel vacuum tubes in the BNL Relativistic Heavy Ion Collider (RHIC). The magnetron mole was successfully operated to copper coat an assembly containing a full-size, stainless steel, cold bore, RHIC magnet tubing connected to two types of RHIC bellows, to which two additional pipes made of RHIC tubing were connected. To increase the cathode lifetime, a movable magnet package was developed, and the thickest possible cathode was made, with a rather challenging target to substrate (de facto anode) distance of less than 1.5 cm. Achieving reliable steady state magnetron discharges at such a short cathode to anode gap was rather challenging, when compared to commercial coating equipment, where the target to substrate distance is 10's cm; 6.3 cm is the lowest experimental target to substrate distance found in the literature. Additionally, the magnetron developed during this project provides unique omni-directional uniform coating. The magnetron is mounted on a carriage with spring loaded wheels that successfully crossed bellows and adjusted for variations in vacuum tube diameter, while keeping the magnetron centered. Electrical power and cooling water were fed through a cable bundle. The umbilical cabling system is driven by a motorized spool. Excellent coating adhesion was achieved. Measurements indicated that well-scrubbed copper coating reduced secondary electron yield to 1, i.e., the problem of electron clouds can be eliminated. Room temperature RF resistivity measurement indicated that a 10 μm copper coated stainless steel RHIC tube has a conductivity close to that of pure copper tubing. Excellent coating adhesion was achieved. The device details and experimental results are described.

Preparation of W/CuCrZr mono-block test mock-up using vacuum brazing technique

NASA Astrophysics Data System (ADS)

Premjit Singh, K.; Khirwadkar, S.; Bhope, Kedar; Patel, Nikunj; Mokaria, Prakash

2017-04-01

Development of the joining for W/CuCrZr mono-block PFC test mock-up is an interesting area in Fusion R&D. W/Cu bimetallic material has been prepared using OFHC Copper casting approach on the radial surface of W mono-block tile surface. The W/Cu bimetallic material has been joined with CuCrZr tube (heat sink) material with the vacuum brazing route. Vacuum brazing of W/Cu-CuCrZr has been performed @ 970°C for 10 min using NiCuMn-37 filler material under deep vacuum environment (10-6 mbar). Graphite fixture was used for OFHC Copper casting and vacuum brazing experiments. The joint integrity of W/Cu-CuCrZr mono-block mock-up of W/Cu and Cu-CuCrZr interface has been checked using ultrasonic immersion technique. The result of the experimental work is presented in the paper.

Boron nitride housing cools transistors

NASA Technical Reports Server (NTRS)

1965-01-01

Boron nitride ceramic heat sink cools transistors in r-f transmitter and receiver circuits. Heat dissipated by the transistor is conducted by the boron nitride housing to the metal chassis on which it is mounted.

25OHD analogues and vacuum blood collection tubes dramatically affect the accuracy of automated immunoassays

PubMed Central

Yu, Songlin; Cheng, Xinqi; Fang, Huiling; Zhang, Ruiping; Han, Jianhua; Qin, Xuzhen; Cheng, Qian; Su, Wei; Hou, Li’an; Xia, Liangyu; Qiu, Ling

2015-01-01

Variations in vitamin D quantification methods are large, and influences of vitamin D analogues and blood collection methods have not been systematically examined. We evaluated the effects of vitamin D analogues 25OHD2 and 3-epi 25OHD3 and blood collection methods on vitamin D measurement, using five immunoassay systems and liquid chromatography-tandem mass spectrometry (LC-MS/MS). Serum samples (332) were selected from routine vitamin D assay requests, including samples with or without 25OHD2 or 3-epi 25OHD3, and analysed using various immunoassay systems. In samples with no 25OHD2 or 3-epi 25OHD3, all immunoassays correlated well with LC-MS/MS. However, the Siemens system produced a large positive mean bias of 12.5 ng/mL and a poor Kappa value when using tubes with clot activator and gel separator. When 25OHD2 or 3-epi 25OHD3 was present, correlations and clinical agreement decreased for all immunoassays. Serum 25OHD in VACUETTE tubes with gel and clot activator, as measured by the Siemens system, produced significantly higher values than did samples collected in VACUETTE tubes with no additives. Bias decreased and clinical agreement improved significantly when using tubes with no additives. In conclusion, most automated immunoassays showed acceptable correlation and agreement with LC-MS/MS; however, 25OHD analogues and blood collection tubes dramatically affected accuracy. PMID:26420221

25OHD analogues and vacuum blood collection tubes dramatically affect the accuracy of automated immunoassays.

PubMed

Yu, Songlin; Cheng, Xinqi; Fang, Huiling; Zhang, Ruiping; Han, Jianhua; Qin, Xuzhen; Cheng, Qian; Su, Wei; Hou, Li'an; Xia, Liangyu; Qiu, Ling

2015-09-30

Variations in vitamin D quantification methods are large, and influences of vitamin D analogues and blood collection methods have not been systematically examined. We evaluated the effects of vitamin D analogues 25OHD2 and 3-epi 25OHD3 and blood collection methods on vitamin D measurement, using five immunoassay systems and liquid chromatography-tandem mass spectrometry (LC-MS/MS). Serum samples (332) were selected from routine vitamin D assay requests, including samples with or without 25OHD2 or 3-epi 25OHD3, and analysed using various immunoassay systems. In samples with no 25OHD2 or 3-epi 25OHD3, all immunoassays correlated well with LC-MS/MS. However, the Siemens system produced a large positive mean bias of 12.5 ng/mL and a poor Kappa value when using tubes with clot activator and gel separator. When 25OHD2 or 3-epi 25OHD3 was present, correlations and clinical agreement decreased for all immunoassays. Serum 25OHD in VACUETTE tubes with gel and clot activator, as measured by the Siemens system, produced significantly higher values than did samples collected in VACUETTE tubes with no additives. Bias decreased and clinical agreement improved significantly when using tubes with no additives. In conclusion, most automated immunoassays showed acceptable correlation and agreement with LC-MS/MS; however, 25OHD analogues and blood collection tubes dramatically affected accuracy.

The resonant body transistor.

PubMed

Weinstein, Dana; Bhave, Sunil A

2010-04-14

This paper introduces the resonant body transistor (RBT), a silicon-based dielectrically transduced nanoelectromechanical (NEM) resonator embedding a sense transistor directly into the resonator body. Combining the benefits of FET sensing with the frequency scaling capabilities and high quality factors (Q) of internal dielectrically transduced bar resonators, the resonant body transistor achieves >10 GHz frequencies and can be integrated into a standard CMOS process for on-chip clock generation, high-Q microwave circuits, fundamental quantum-state preparation and observation, and high-sensitivity measurements. An 11.7 GHz bulk-mode RBT is demonstrated with a quality factor Q of 1830, marking the highest frequency acoustic resonance measured to date on a silicon wafer.

On-Chip Chemical Self-Assembly of Semiconducting Single-Walled Carbon Nanotubes (SWNTs): Toward Robust and Scale Invariant SWNTs Transistors.

PubMed

Derenskyi, Vladimir; Gomulya, Widianta; Talsma, Wytse; Salazar-Rios, Jorge Mario; Fritsch, Martin; Nirmalraj, Peter; Riel, Heike; Allard, Sybille; Scherf, Ullrich; Loi, Maria A

2017-06-01

In this paper, the fabrication of carbon nanotubes field effect transistors by chemical self-assembly of semiconducting single walled carbon nanotubes (s-SWNTs) on prepatterned substrates is demonstrated. Polyfluorenes derivatives have been demonstrated to be effective in selecting s-SWNTs from raw mixtures. In this work the authors functionalized the polymer with side chains containing thiols, to obtain chemical self-assembly of the selected s-SWNTs on substrates with prepatterned gold electrodes. The authors show that the full side functionalization of the conjugated polymer with thiol groups partially disrupts the s-SWNTs selection, with the presence of metallic tubes in the dispersion. However, the authors determine that the selectivity can be recovered either by tuning the number of thiol groups in the polymer, or by modulating the polymer/SWNTs proportions. As demonstrated by optical and electrical measurements, the polymer containing 2.5% of thiol groups gives the best s-SWNT purity. Field-effect transistors with various channel lengths, using networks of SWNTs and individual tubes, are fabricated by direct chemical self-assembly of the SWNTs/thiolated-polyfluorenes on substrates with lithographically defined electrodes. The network devices show superior performance (mobility up to 24 cm 2 V -1 s -1 ), while SWNTs devices based on individual tubes show an unprecedented (100%) yield for working devices. Importantly, the SWNTs assembled by mean of the thiol groups are stably anchored to the substrate and are resistant to external perturbation as sonication in organic solvents. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Preanalytical Nonconformity Management Regarding Primary Tube Mixing in Brazil.

PubMed

Lima-Oliveira, Gabriel; Cesare Guidi, Gian; Guimaraes, Andre Valpassos Pacifici; Abol Correa, Jose; Lippi, Giuseppe

2017-01-01

The multifaceted clinical laboratory process is divided in three essential phases: the preanalytical, analytical and postanalytical phase. Problems emerging from the preanalytical phase are responsible for more than 60% of laboratory errors. This report is aimed at highlighting and discussing nonconformity (e.g., nonstandardized procedures) in primary blood tube mixing immediately after blood collection by venipuncture with evacuated tube systems. From January 2015 to December 2015, fifty different laboratory quality managers from Brazil were contacted to request their internal audit reports on nonconformity regarding primary blood tube mixing immediately after blood collection by venipuncture performed using evacuated tube systems. A minority of internal audits (i.e., 4%) concluded that evacuated blood tubes were not accurately mixed after collection, whereas more than half of them reported that evacuated blood tubes were vigorously mixed immediately after collection, thus magnifying the risk of producing spurious hemolysis. Despite the vast ma jority of centers declaring that evacuated blood tubes were mixed gently and carefully, the overall number of inversions was found to be different from that recommended by the manufacturer. Since the turbulence generated by the standard vacuum pressure inside the primary evacuated tubes seems to be sufficient for providing solubilization, mixing and stabilization between additives and blood during venipuncture, avoidance of primary tube mixing probably does not introduce a major bias in tests results and may not be considered a nonconformity during audits for accreditation.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, Albert G.; Drummond, Timothy J.; Robertson, Perry J.; Zipperian, Thomas E.

1995-01-01

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits.

Complementary junction heterostructure field-effect transistor

DOEpatents

Baca, A.G.; Drummond, T.J.; Robertson, P.J.; Zipperian, T.E.

1995-12-26

A complimentary pair of compound semiconductor junction heterostructure field-effect transistors and a method for their manufacture are disclosed. The p-channel junction heterostructure field-effect transistor uses a strained layer to split the degeneracy of the valence band for a greatly improved hole mobility and speed. The n-channel device is formed by a compatible process after removing the strained layer. In this manner, both types of transistors may be independently optimized. Ion implantation is used to form the transistor active and isolation regions for both types of complimentary devices. The invention has uses for the development of low power, high-speed digital integrated circuits. 10 figs.

Assessment of Phospohrene Field Effect Transistors

DTIC Science & Technology

2018-01-28

electronics industry. To this end, transistor test structures would initially be fabricated on phosphorene exfoliated from black phosphorus and, later, on...34Phosphorene FETs-Promising Transistors Based on a few Layers of Phosphorus Atoms," Nanjing Electronic Devices Institute, Nanjing, China, Jul. 2015...OH, Nov. 2015. J.C. M. Hwang, "Phosphorene Transistors-Transient or Lasting Electronics ?" Workshop Frontier Electronics , San Juan, PR, Dec. 2015

Oxide Based Transistor for Flexible Displays

DTIC Science & Technology

2014-09-15

thin film transistors (TFTs) for next generation display technologies. A detailed and comprehensive study was carried out to ascertain the process...Box 12211 Research Triangle Park, NC 27709-2211 Thin film transistors , flexible electronics, RF sputtering, Transparent amorphous oxide semiconductors...NC A&T and RTI, International investigated In free GaSnZnO (GSZO) material system, as the active channel in thin film transistors (TFTs) for next

Tube bundle system

PubMed Central

Marchewka, W.; Mohamed, K.; Addis, J.; Karnack, F.

2015-01-01

A tube bundle system (TBS) is a mechanical system for continuously drawing gas samples through tubes from multiple monitoring points located in an underground coal mine. The gas samples are drawn via vacuum pump to the surface and are typically analyzed for oxygen, methane, carbon dioxide and carbon monoxide. Results of the gas analyses are displayed and recorded for further analysis. Trends in the composition of the mine atmosphere, such as increasing methane or carbon monoxide concentration, can be detected early, permitting rapid intervention that prevents problems, such as a potentially explosive atmosphere behind seals, fire or spontaneous combustion. TBS is a well-developed technology and has been used in coal mines around the world for more than 50 years. Most longwall coal mines in Australia deploy a TBS, usually with 30 to 40 monitoring points as part of their atmospheric monitoring. The primary uses of a TBS are detecting spontaneous combustion and maintaining sealed areas inert. The TBS might also provide mine atmosphere gas composition data after a catastrophe occurs in an underground mine, if the sampling tubes are not damaged. TBSs are not an alternative to statutory gas and ventilation airflow monitoring by electronic sensors or people; rather, they are an option to consider in an overall mine atmosphere monitoring strategy. This paper describes the hardware, software and operation of a TBS and presents one example of typical data from a longwall coal mine PMID:26306052

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors

PubMed Central

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C. P.; Gelinck, Gerwin H.; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-01-01

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics. PMID:27762321

Reconfigurable Complementary Logic Circuits with Ambipolar Organic Transistors.

PubMed

Yoo, Hocheon; Ghittorelli, Matteo; Smits, Edsger C P; Gelinck, Gerwin H; Lee, Han-Koo; Torricelli, Fabrizio; Kim, Jae-Joon

2016-10-20

Ambipolar organic electronics offer great potential for simple and low-cost fabrication of complementary logic circuits on large-area and mechanically flexible substrates. Ambipolar transistors are ideal candidates for the simple and low-cost development of complementary logic circuits since they can operate as n-type and p-type transistors. Nevertheless, the experimental demonstration of ambipolar organic complementary circuits is limited to inverters. The control of the transistor polarity is crucial for proper circuit operation. Novel gating techniques enable to control the transistor polarity but result in dramatically reduced performances. Here we show high-performance non-planar ambipolar organic transistors with electrical control of the polarity and orders of magnitude higher performances with respect to state-of-art split-gate ambipolar transistors. Electrically reconfigurable complementary logic gates based on ambipolar organic transistors are experimentally demonstrated, thus opening up new opportunities for ambipolar organic complementary electronics.

Carbon Nanotube-Based Digital Vacuum Electronics and Miniature Instrumentation for Space Exploration

NASA Technical Reports Server (NTRS)

Manohara, H.; Toda, R.; Lin, R. H.; Liao, A.; Mojarradi, M.

2010-01-01

JPL has developed high performance cold cathodes using arrays of carbon nanotube bundles that produce > 15 A/sq cm at applied fields of 5 to 8 V/micron without any beam focusing. They have exhibited robust operation in poor vacuums of 10(exp -6) to 10(exp -4) Torr- a typically achievable range inside hermetically sealed microcavities. Using these CNT cathodes JPL has developed miniature X-ray tubes capable of delivering sufficient photon flux at acceleration voltages of <20kV to perform definitive mineralogy on planetary surfaces; mass ionizers that offer two orders of magnitude power savings, and S/N ratio better by a factor of five over conventional ionizers. JPL has also developed a new class of programmable logic gates using CNT vacuum electronics potentially for Venus in situ missions and defense applications. These digital vacuum electronic devices are inherently high-temperature tolerant and radiation insensitive. Device design, fabrication and DC switching operation at temperatures up to 700 C are presented in this paper.

Ultra-high gain diffusion-driven organic transistor

PubMed Central

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-01-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal–semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics. PMID:26829567

Ultra-high gain diffusion-driven organic transistor.

PubMed

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

Ultra-high gain diffusion-driven organic transistor

NASA Astrophysics Data System (ADS)

Torricelli, Fabrizio; Colalongo, Luigi; Raiteri, Daniele; Kovács-Vajna, Zsolt Miklós; Cantatore, Eugenio

2016-02-01

Emerging large-area technologies based on organic transistors are enabling the fabrication of low-cost flexible circuits, smart sensors and biomedical devices. High-gain transistors are essential for the development of large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show a new organic field-effect transistor architecture with a gain larger than 700. This is the highest gain ever reported for organic field-effect transistors. In the proposed organic field-effect transistor, the charge injection and extraction at the metal-semiconductor contacts are driven by the charge diffusion. The ideal conditions of ohmic contacts with negligible contact resistance and flat current saturation are demonstrated. The approach is general and can be extended to any thin-film technology opening unprecedented opportunities for the development of high-performance flexible electronics.

High-Performance Vertical Organic Electrochemical Transistors.

PubMed

Donahue, Mary J; Williamson, Adam; Strakosas, Xenofon; Friedlein, Jacob T; McLeod, Robert R; Gleskova, Helena; Malliaras, George G

2018-02-01

Organic electrochemical transistors (OECTs) are promising transducers for biointerfacing due to their high transconductance, biocompatibility, and availability in a variety of form factors. Most OECTs reported to date, however, utilize rather large channels, limiting the transistor performance and resulting in a low transistor density. This is typically a consequence of limitations associated with traditional fabrication methods and with 2D substrates. Here, the fabrication and characterization of OECTs with vertically stacked contacts, which overcome these limitations, is reported. The resulting vertical transistors exhibit a reduced footprint, increased intrinsic transconductance of up to 57 mS, and a geometry-normalized transconductance of 814 S m -1 . The fabrication process is straightforward and compatible with sensitive organic materials, and allows exceptional control over the transistor channel length. This novel 3D fabrication method is particularly suited for applications where high density is needed, such as in implantable devices. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

High transconductance organic electrochemical transistors

NASA Astrophysics Data System (ADS)

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-07-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications.

High transconductance organic electrochemical transistors

PubMed Central

Khodagholy, Dion; Rivnay, Jonathan; Sessolo, Michele; Gurfinkel, Moshe; Leleux, Pierre; Jimison, Leslie H.; Stavrinidou, Eleni; Herve, Thierry; Sanaur, Sébastien; Owens, Róisín M.; Malliaras, George G.

2013-01-01

The development of transistors with high gain is essential for applications ranging from switching elements and drivers to transducers for chemical and biological sensing. Organic transistors have become well-established based on their distinct advantages, including ease of fabrication, synthetic freedom for chemical functionalization, and the ability to take on unique form factors. These devices, however, are largely viewed as belonging to the low-end of the performance spectrum. Here we present organic electrochemical transistors with a transconductance in the mS range, outperforming transistors from both traditional and emerging semiconductors. The transconductance of these devices remains fairly constant from DC up to a frequency of the order of 1 kHz, a value determined by the process of ion transport between the electrolyte and the channel. These devices, which continue to work even after being crumpled, are predicted to be highly relevant as transducers in biosensing applications. PMID:23851620

Recent progress in photoactive organic field-effect transistors.

PubMed

Wakayama, Yutaka; Hayakawa, Ryoma; Seo, Hoon-Seok

2014-04-01

Recent progress in photoactive organic field-effect transistors (OFETs) is reviewed. Photoactive OFETs are divided into light-emitting (LE) and light-receiving (LR) OFETs. In the first part, LE-OFETs are reviewed from the viewpoint of the evolution of device structures. Device performances have improved in the last decade with the evolution of device structures from single-layer unipolar to multi-layer ambipolar transistors. In the second part, various kinds of LR-OFETs are featured. These are categorized according to their functionalities: phototransistors, non-volatile optical memories, and photochromism-based transistors. For both, various device configurations are introduced: thin-film based transistors for practical applications, single-crystalline transistors to investigate fundamental physics, nanowires, multi-layers, and vertical transistors based on new concepts.

Investigation of using shrinking method in construction of Institute for Research in Fundamental Sciences Electron Linear Accelerator TW-tube (IPM TW-Linac tube)

NASA Astrophysics Data System (ADS)

Ghasemi, F.; Abbasi Davani, F.

2015-06-01

Due to Iran's growing need for accelerators in various applications, IPM's electron Linac project has been defined. This accelerator is a 15 MeV energy S-band traveling-wave accelerator which is being designed and constructed based on the klystron that has been built in Iran. Based on the design, operating mode is π /2 and the accelerating chamber consists of two 60cm long tubes with constant impedance and a 30cm long buncher. Amongst all construction methods, shrinking method is selected for construction of IPM's electron Linac tube because it has a simple procedure and there is no need for large vacuum or hydrogen furnaces. In this paper, different aspects of this method are investigated. According to the calculations, linear ratio of frequency alteration to radius change is 787.8 MHz/cm, and the maximum deformation at the tube wall where disks and the tube make contact is 2.7μ m. Applying shrinking method for construction of 8- and 24-cavity tubes results in satisfactory frequency and quality factor. Average deviations of cavities frequency of 8- and 24-cavity tubes to the design values are 0.68 MHz and 1.8 MHz respectively before tune and 0.2 MHz and 0.4 MHz after tune. Accelerating tubes, buncher, and high power couplers of IPM's electron linac are constructed using shrinking method.

High-Speed, high-power, switching transistor

NASA Technical Reports Server (NTRS)

Carnahan, D.; Ohu, C. K.; Hower, P. L.

1979-01-01

Silicon transistor rate for 200 angstroms at 400 to 600 volts combines switching speed of transistors with ruggedness, power capacity of thyristor. Transistor introduces unique combination of increased power-handling capability, unusally low saturation and switching losses, and submicrosecond switching speeds. Potential applications include high power switching regulators, linear amplifiers, chopper controls for high frequency electrical vehicle drives, VLF transmitters, RF induction heaters, kitchen cooking ranges, and electronic scalpels for medical surgery.

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

PubMed Central

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2015-01-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode. PMID:25814770

In situ preparation, electrical and surface analytical characterization of pentacene thin film transistors

NASA Astrophysics Data System (ADS)

Lassnig, R.; Striedinger, B.; Hollerer, M.; Fian, A.; Stadlober, B.; Winkler, A.

2014-09-01

The fabrication of organic thin film transistors with highly reproducible characteristics presents a very challenging task. We have prepared and analyzed model pentacene thin film transistors under ultra-high vacuum conditions, employing surface analytical tools and methods. Intentionally contaminating the gold contacts and SiO2 channel area with carbon through repeated adsorption, dissociation, and desorption of pentacene proved to be very advantageous in the creation of devices with stable and reproducible parameters. We mainly focused on the device properties, such as mobility and threshold voltage, as a function of film morphology and preparation temperature. At 300 K, pentacene displays Stranski-Krastanov growth, whereas at 200 K fine-grained, layer-like film growth takes place, which predominantly influences the threshold voltage. Temperature dependent mobility measurements demonstrate good agreement with the established multiple trapping and release model, which in turn indicates a predominant concentration of shallow traps in the crystal grains and at the oxide-semiconductor interface. Mobility and threshold voltage measurements as a function of coverage reveal that up to four full monolayers contribute to the overall charge transport. A significant influence on the effective mobility also stems from the access resistance at the gold contact-semiconductor interface, which is again strongly influenced by the temperature dependent, characteristic film growth mode.

COR1 Engineering Test Unit Measurements at the NCAR/HAO Vacuum Tunnel Facility, October-November 2002

NASA Technical Reports Server (NTRS)

Thompson, William

2002-01-01

The Engineering Test Unit (ETU) of COR1 was made in two configurations. The first configuration, ETU-1, was for vibration testing, while the second, ETU-2, was for optical testing. This is a report on the optical testing performed on ETU-2 at the NCAR/HAO Vacuum Tunnel Facility during the months of October and November, 2002. This was the same facility used to test the two previous breadboard models. In both configurations, the first two tube sections were complete, with all optical elements aligned. The vibration model ETU-1 had the remaining tube sections attached, with mass models for the remaining optics, for the various mechanisms, and for the focal plane assembly. It was then converted into the optical model ETU-2 by removing tube sections 3 to 5, and mounting the remaining optics on commercial mounts. (The bandpass filter was also installed into tube 2, which had been replaced in ETU-1 by a mass model, so that pre- and post-vibration optical measurements could be made.) Doublet 2 was installed in a Newport LP-2 carrier, and aligned to the other optics in the first two tube sections. The LP-2 adjustment screws were then uralened so that the alignment could be maintained during shipping. Because neither the flight polarizer nor Hollow Core Motor were available, they were simulated by a commercial polarizer and rotational mount, both from Oriel corporation. The Oriel rotational stage was not designed for vacuum use, but it was determined after consultation with the company, and lab testing, that the stage could be used in the moderate vacuum conditions at the NCAR/HAO facility. The shutter and focal plane assembly were simulated with the same camera used for the previous two breadboard tests. The focal plane mask was simulated with a plane of BK7 glass with a mask glued on, using the same procedure as for the Lyot spot on Doublet 1, and mounted in an adjustable LP-2 carrier. Two masks were made, one made to the precise specifications of the optical design, the

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements

NASA Astrophysics Data System (ADS)

Hlondo, L. R.; Lalremruata, B.; Punte, L. R. M.; Rebecca, L.; Lalnunthari, J.; Thanga, H. H.

2016-04-01

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power are studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hlondo, L. R.; Lalremruata, B.; Punte, L. R. M.

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power aremore » studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.« less

A revisit to self-excited push pull vacuum tube radio frequency oscillator for ion sources and power measurements.

PubMed

Hlondo, L R; Lalremruata, B; Punte, L R M; Rebecca, L; Lalnunthari, J; Thanga, H H

2016-04-01

Self-excited push-pull vacuum tube oscillator is one of the most commonly used oscillators in radio frequency (RF)-ion plasma sources for generation of ions using radio frequency. However, in spite of its fundamental role in the process of plasma formation, the working and operational characteristics are the most frequently skip part in the descriptions of RF ion sources in literatures. A more detailed treatment is given in the present work on the RF oscillator alone using twin beam power tetrodes 829B and GI30. The circuit operates at 102 MHz, and the oscillation conditions, stability in frequency, and RF output power are studied and analyzed. A modified form of photometric method and RF peak voltage detection method are employed to study the variation of the oscillator output power with plate voltage. The power curves obtained from these measurements are quadratic in nature and increase with increase in plate voltage. However, the RF output power as measured by photometric methods is always less than the value calculated from peak voltage measurements. This difference is due to the fact that the filament coil of the ordinary light bulb used as load/detector in photometric method is not a perfect inductor. The effect of inductive reactance on power transfer to load was further investigated and a technique is developed to estimate the amount of power correction needed in the photometric measurement result.

Universal power transistor base drive control unit

DOEpatents

Gale, Allan R.; Gritter, David J.

1988-01-01

A saturation condition regulator system for a power transistor which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition.

Universal power transistor base drive control unit

DOEpatents

Gale, A.R.; Gritter, D.J.

1988-06-07

A saturation condition regulator system for a power transistor is disclosed which achieves the regulation objectives of a Baker clamp but without dumping excess base drive current into the transistor output circuit. The base drive current of the transistor is sensed and used through an active feedback circuit to produce an error signal which modulates the base drive current through a linearly operating FET. The collector base voltage of the power transistor is independently monitored to develop a second error signal which is also used to regulate base drive current. The current-sensitive circuit operates as a limiter. In addition, a fail-safe timing circuit is disclosed which automatically resets to a turn OFF condition in the event the transistor does not turn ON within a predetermined time after the input signal transition. 2 figs.

Indian Vacuum Society: The Indian Vacuum Society

NASA Astrophysics Data System (ADS)

Saha, T. K.

2008-03-01

The Indian Vacuum Society (IVS) was established in 1970. It has over 800 members including many from Industry and R & D Institutions spread throughout India. The society has an active chapter at Kolkata. The society was formed with the main aim to promote, encourage and develop the growth of Vacuum Science, Techniques and Applications in India. In order to achieve this aim it has conducted a number of short term courses at graduate and technician levels on vacuum science and technology on topics ranging from low vacuum to ultrahigh vacuum So far it has conducted 39 such courses at different parts of the country and imparted training to more than 1200 persons in the field. Some of these courses were in-plant training courses conducted on the premises of the establishment and designed to take care of the special needs of the establishment. IVS also regularly conducts national and international seminars and symposia on vacuum science and technology with special emphasis on some theme related to applications of vacuum. A large number of delegates from all over India take part in the deliberations of such seminars and symposia and present their work. IVS also arranges technical visits to different industries and research institutes. The society also helped in the UNESCO sponsored post-graduate level courses in vacuum science, technology and applications conducted by Mumbai University. The society has also designed a certificate and diploma course for graduate level students studying vacuum science and technology and has submitted a syllabus to the academic council of the University of Mumbai for their approval, we hope that some colleges affiliated to the university will start this course from the coming academic year. IVS extended its support in standardizing many of the vacuum instruments and played a vital role in helping to set up a Regional Testing Centre along with BARC. As part of the development of vacuum education, the society arranges the participation of

Hafnium transistor design for neural interfacing.

PubMed

Parent, David W; Basham, Eric J

2008-01-01

A design methodology is presented that uses the EKV model and the g(m)/I(D) biasing technique to design hafnium oxide field effect transistors that are suitable for neural recording circuitry. The DC gain of a common source amplifier is correlated to the structural properties of a Field Effect Transistor (FET) and a Metal Insulator Semiconductor (MIS) capacitor. This approach allows a transistor designer to use a design flow that starts with simple and intuitive 1-D equations for gain that can be verified in 1-D MIS capacitor TCAD simulations, before final TCAD process verification of transistor properties. The DC gain of a common source amplifier is optimized by using fast 1-D simulations and using slower, complex 2-D simulations only for verification. The 1-D equations are used to show that the increased dielectric constant of hafnium oxide allows a higher DC gain for a given oxide thickness. An additional benefit is that the MIS capacitor can be employed to test additional performance parameters important to an open gate transistor such as dielectric stability and ionic penetration.

Solution Processed Metal Oxide High-κ Dielectrics for Emerging Transistors and Circuits.

PubMed

Liu, Ao; Zhu, Huihui; Sun, Huabin; Xu, Yong; Noh, Yong-Young

2018-06-14

The electronic functionalities of metal oxides comprise conductors, semiconductors, and insulators. Metal oxides have attracted great interest for construction of large-area electronics, particularly thin-film transistors (TFTs), for their high optical transparency, excellent chemical and thermal stability, and mechanical tolerance. High-permittivity (κ) oxide dielectrics are a key component for achieving low-voltage and high-performance TFTs. With the expanding integration of complementary metal oxide semiconductor transistors, the replacement of SiO 2 with high-κ oxide dielectrics has become urgently required, because their provided thicker layers suppress quantum mechanical tunneling. Toward low-cost devices, tremendous efforts have been devoted to vacuum-free, solution processable fabrication, such as spin coating, spray pyrolysis, and printing techniques. This review focuses on recent progress in solution processed high-κ oxide dielectrics and their applications to emerging TFTs. First, the history, basics, theories, and leakage current mechanisms of high-κ oxide dielectrics are presented, and the underlying mechanism for mobility enhancement over conventional SiO 2 is outlined. Recent achievements of solution-processed high-κ oxide materials and their applications in TFTs are summarized and traditional coating methods and emerging printing techniques are introduced. Finally, low temperature approaches, e.g., ecofriendly water-induced, self-combustion reaction, and energy-assisted post treatments, for the realization of flexible electronics and circuits are discussed. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Gain control of photomultiplier tubes used in detecting differential absorption lidar returns

NASA Technical Reports Server (NTRS)

Allen, Robert J. (Inventor)

1989-01-01

A technique for controlling the gain of a photomultiplier tube (PMT) 20. A voltage divider (resistors 45-49 in FIG. 1 and zener diodes 60-65 in FIG. 3) is used to control the potentials on dynodes 5, 7, and 9 of PMT 20. Transistor switches 53 and 58 provide the control of the voltage divider in FIG. 1 and photodiodes 66, 67 and 70 provide the control in FIG. 3. The gain control of PMT 20 is in the range from 100% to less than 0.001% (100,000 to 1).

Carbon Nanotube Bundle Array Cold Cathodes for THz Vacuum Tube Sources

NASA Astrophysics Data System (ADS)

Manohara, Harish M.; Toda, Risaku; Lin, Robert H.; Liao, Anna; Bronikowski, Michael J.; Siegel, Peter H.

2009-12-01

We present high performance cold cathodes composed of arrays of carbon nanotube bundles that routinely produce > 15 A/cm2 at applied fields of 5 to 8 V/µm without any beam focusing. They have exhibited robust operation in poor vacuums of 10-6 to 10-4 Torr- a typically achievable range inside hermetically sealed microcavities. A new double-SOI process was developed to monolithically integrate a gate and additional beam tailoring electrodes. The ability to design the electrodes for specific requirements makes carbon nanotube field emission sources extremely flexible. The lifetime of these cathodes is found to be affected by two effects: a gradual decay of emission due to anode sputtering, and catastrophic failure because of dislodging of CNT bundles at high fields ( > 10 V/µm).

Planar-Processed Polymer Transistors.

PubMed

Xu, Yong; Sun, Huabin; Shin, Eul-Yong; Lin, Yen-Fu; Li, Wenwu; Noh, Yong-Young

2016-10-01

Planar-processed polymer transistors are proposed where the effective charge injection and the split unipolar charge transport are all on the top surface of the polymer film, showing ideal device characteristics with unparalleled performance. This technique provides a great solution to the problem of fabrication limitations, the ambiguous operating principle, and the performance improvements in practical applications of conjugated-polymer transistors. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Graphene-based flexible and stretchable thin film transistors.

PubMed

Yan, Chao; Cho, Jeong Ho; Ahn, Jong-Hyun

2012-08-21

Graphene has been attracting wide attention owing to its superb electronic, thermal and mechanical properties. These properties allow great applications in the next generation of optoelectronics, where flexibility and stretchability are essential. In this context, the recent development of graphene growth/transfer and its applications in field-effect transistors are involved. In particular, we provide a detailed review on the state-of-the-art of graphene-based flexible and stretchable thin film transistors. We address the principles of fabricating high-speed graphene analog transistors and the key issues of producing an array of graphene-based transistors on flexible and stretchable substrates. It provides a platform for future work to focus on understanding and realizing high-performance graphene-based transistors.

Thermal analysis on x-ray tube for exhaust process

NASA Astrophysics Data System (ADS)

Kumar, Rakesh; Rao Ratnala, Srinivas; Veeresh Kumar, G. B.; Shivakumar Gouda, P. S.

2018-02-01

It is great importance in the use of X-rays for medical purposes that the dose given to both the patient and the operator is carefully controlled. There are many types of the X- ray tubes used for different applications based on their capacity and power supplied. In present thesis maxi ray 165 tube is analysed for thermal exhaust processes with ±5% accuracy. Exhaust process is usually done to remove all the air particles and to degasify the insert under high vacuum at 2e-05Torr. The tube glass is made up of Pyrex material, 95%Tungsten and 5%rhenium is used as target material for which the melting point temperature is 3350°C. Various materials are used for various parts; during the operation of X- ray tube these waste gases are released due to high temperature which in turn disturbs the flow of electrons. Thus, before using the X-ray tube for practical applications it has to undergo exhaust processes. Initially we build MX 165 model to carry out thermal analysis, and then we simulate the bearing temperature profiles with FE model to match with test results with ±5%accuracy. At last implement the critical protocols required for manufacturing processes like MF Heating, E-beam, Seasoning and FT.

Coaxial inverted geometry transistor having buried emitter

NASA Technical Reports Server (NTRS)

Hruby, R. J.; Cress, S. B.; Dunn, W. R. (Inventor)

1973-01-01

The invention relates to an inverted geometry transistor wherein the emitter is buried within the substrate. The transistor can be fabricated as a part of a monolithic integrated circuit and is particularly suited for use in applications where it is desired to employ low actuating voltages. The transistor may employ the same doping levels in the collector and emitter, so these connections can be reversed.

Highly Crumpled All-Carbon Transistors for Brain Activity Recording.

PubMed

Yang, Long; Zhao, Yan; Xu, Wenjing; Shi, Enzheng; Wei, Wenjing; Li, Xinming; Cao, Anyuan; Cao, Yanping; Fang, Ying

2017-01-11

Neural probes based on graphene field-effect transistors have been demonstrated. Yet, the minimum detectable signal of graphene transistor-based probes is inversely proportional to the square root of the active graphene area. This fundamentally limits the scaling of graphene transistor-based neural probes for improved spatial resolution in brain activity recording. Here, we address this challenge using highly crumpled all-carbon transistors formed by compressing down to 16% of its initial area. All-carbon transistors, chemically synthesized by seamless integration of graphene channels and hybrid graphene/carbon nanotube electrodes, maintained structural integrity and stable electronic properties under large mechanical deformation, whereas stress-induced cracking and junction failure occurred in conventional graphene/metal transistors. Flexible, highly crumpled all-carbon transistors were further verified for in vivo recording of brain activity in rats. These results highlight the importance of advanced material and device design concepts to make improvements in neuroelectronics.

High Accuracy Transistor Compact Model Calibrations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hembree, Charles E.; Mar, Alan; Robertson, Perry J.

2015-09-01

Typically, transistors are modeled by the application of calibrated nominal and range models. These models consists of differing parameter values that describe the location and the upper and lower limits of a distribution of some transistor characteristic such as current capacity. Correspond- ingly, when using this approach, high degrees of accuracy of the transistor models are not expected since the set of models is a surrogate for a statistical description of the devices. The use of these types of models describes expected performances considering the extremes of process or transistor deviations. In contrast, circuits that have very stringent accuracy requirementsmore » require modeling techniques with higher accuracy. Since these accurate models have low error in transistor descriptions, these models can be used to describe part to part variations as well as an accurate description of a single circuit instance. Thus, models that meet these stipulations also enable the calculation of quantifi- cation of margins with respect to a functional threshold and uncertainties in these margins. Given this need, new model high accuracy calibration techniques for bipolar junction transis- tors have been developed and are described in this report.« less

A transistor based on 2D material and silicon junction

NASA Astrophysics Data System (ADS)

Kim, Sanghoek; Lee, Seunghyun

2017-07-01

A new type of graphene-silicon junction transistor based on bipolar charge-carrier injection was designed and investigated. In contrast to many recent studies on graphene field-effect transistor (FET), this device is a new type of bipolar junction transistor (BJT). The transistor fully utilizes the Fermi level tunability of graphene under bias to increase the minority-carrier injection efficiency of the base-emitter junction in the BJT. Single-layer graphene was used to form the emitter and the collector, and a p-type silicon was used as the base. The output of this transistor was compared with a metal-silicon junction transistor ( i.e. surface-barrier transistor) to understand the difference between a graphene-silicon junction and metal-silicon Schottky junction. A significantly higher current gain was observed in the graphene-silicon junction transistor as the base current was increased. The graphene-semiconductor heterojunction transistor offers several unique advantages, such as an extremely thin device profile, a low-temperature (< 110 °C) fabrication process, low cost (no furnace process), and high-temperature tolerance due to graphene's stability. A transistor current gain ( β) of 33.7 and a common-emitter amplifier voltage gain of 24.9 were achieved.

Refurbishment of a 39 foot thermal vacuum chamber

NASA Technical Reports Server (NTRS)

Edwards, Arthur A.

1994-01-01

The 39' thermal vacuum chamber at Space Systems/Loral has been used to test numerous spacecraft including those of the GOES, Intelsat, Insat, Superbird, N-Star, NATO and other programs. Ten years ago, the aluminum LN2 shroud experienced serious fatigue failures in the field welded jumper tubing, effectively shutting down the chamber for vacuum testing. The problem was repaired at the time, but new failures began to reappear a few months ago and are now occurring at a rate that suggests that the shroud may again become inoperable. Consequently, Space Systems/Loral is spending in excess of $6 million to replace the shroud and the existing LN2 equipment with a new, state of the art cryogenic system. In May, 1994, a contract was awarded to remove the existing shroud and LN2 pumping system and replace it with a gravity fed shroud and distribution system. Included in the contract are eight skid mounted gaseous nitrogen pumping systems capable of controlling shroud zone temperatures between +150 C and -180 C. The project is scheduled to be completed in April 1995.

Multiple-channel detection of cellular activities by ion-sensitive transistors

NASA Astrophysics Data System (ADS)

Machida, Satoru; Shimada, Hideto; Motoyama, Yumi

2018-04-01

An ion-sensitive field-effect transistor to record cellular activities was demonstrated. This field-effect transistor (bio transistor) includes cultured cells on the gate insulator instead of gate electrode. The bio transistor converts a change in potential underneath the cells into variation of the drain current when ion channels open. The bio transistor has high detection sensitivity to even minute variations in potential utilizing a subthreshold swing region. To open ion channels, a reagent solution (acetylcholine) was added to a human-originating cell cultured on the bio transistor. The drain current was successfully decreased with the addition of acetylcholine. Moreover, we attempted to detect the opening of ion channels using a multiple-channel measurement circuit containing several bio transistors. As a consequence, the drain current distinctly decreased only after the addition of acetylcholine. We confirmed that this measurement system including bio transistors enables to observation of cellular activities sensitively and simultaneously.

Multimode Silicon Nanowire Transistors

PubMed Central

2014-01-01

The combined capabilities of both a nonplanar design and nonconventional carrier injection mechanisms are subject to recent scientific investigations to overcome the limitations of silicon metal oxide semiconductor field effect transistors. In this Letter, we present a multimode field effect transistors device using silicon nanowires that feature an axial n-type/intrinsic doping junction. A heterostructural device design is achieved by employing a self-aligned nickel-silicide source contact. The polymorph operation of the dual-gate device enabling the configuration of one p- and two n-type transistor modes is demonstrated. Not only the type but also the carrier injection mode can be altered by appropriate biasing of the two gate terminals or by inverting the drain bias. With a combined band-to-band and Schottky tunneling mechanism, in p-type mode a subthreshold swing as low as 143 mV/dec and an ON/OFF ratio of up to 104 is found. As the device operates in forward bias, a nonconventional tunneling transistor is realized, enabling an effective suppression of ambipolarity. Depending on the drain bias, two different n-type modes are distinguishable. The carrier injection is dominated by thermionic emission in forward bias with a maximum ON/OFF ratio of up to 107 whereas in reverse bias a Schottky tunneling mechanism dominates the carrier transport. PMID:25303290

Correlation between ambient air and continuous bending stress for the electrical reliability of flexible pentacene-based thin-film transistors

NASA Astrophysics Data System (ADS)

Fan, Ching-Lin; Lin, Wei-Chun; Peng, Han-Hsing; Lin, Yu-Zuo; Huang, Bohr-Ran

2015-01-01

This study investigated how continuous bending stress affects the electrical characteristics of pentacene-based organic thin-film transistors (OTFTs) with poly(4-vinylphenol) (PVP) gate insulator in a vacuum and in ambient air. In tension mode, the strain direction of the fabricated devices was perpendicular to the device channel length. The OTFT devices that were bent in a vacuum exhibited a decreased on current because of cracking in the pentacene channel layer, which can obstruct the transport of charge carriers and deteriorate the on current of the OTFTs. The OTFT devices that were bent in ambient air exhibited a slightly decreased on current and considerably increased off current and subthreshold swing (SS). It was assumed that air moisture passed through the pentacene cracks into the interface between the PVP and pentacene layer, thereby yielding an increase in polar moisture traps, and leading to an increase in the conductivity of the pentacene, thus yielding a slightly decreased on current and considerably increased off current and SS.

Self-protecting transistor oscillator for treating animal tissues

DOEpatents

Doss, James D.

1980-01-01

A transistor oscillator circuit wherein the load current applied to animal tissue treatment electrodes is fed back to the transistor. Removal of load is sensed to automatically remove feedback and stop oscillations. A thermistor on one treatment electrode senses temperature, and by means of a control circuit controls oscillator transistor current.

Contact Metallization and Packaging Technology Development for SiC Bipolar Junction Transistors, PiN Diodes, and Schottky Diodes Designed for Long-Term Operations at 350degreeC

DTIC Science & Technology

2006-05-01

switches that are used in power conditioning systems. Silicon carbide diodes are now available commercially, and transistors (JEFETs, MOSFETs, IGBTs ...in UHP Ar for 60s in a rapid thermal annealing (RTA) furnace to achieve a low contact resistance. Following the RTA step, photolithography was...with 20μm Au is shown in Figure 3-4. The brazing process was performed with an SST 3150 high vacuum furnace . The 3150 utilizes an oil-free roughing

Effect of mesh-peel ply variation on mechanical properties of E-glas composite by infusion vacuum method

NASA Astrophysics Data System (ADS)

Abdurohman, K.; Siahaan, Mabe

2018-04-01

Composite materials made of glass fiber EW-135 with epoxy lycal resin with vacuum infusion method have been performed. The dried glass fiber is arranged in a mold then connected to a vacuum machine and a resin tube. Then, the vacuum machine is turned on and at the same time the resin is sucked and flowed into the mold. This paper reports on the effect of using mesh- peel ply singles on upper-side laminates called A and the effect of using double mesh-peel ply on upper and lower-side laminates call B with glass fiber arrangement is normal and ± 450 in vacuum infusion process. Followed by the manufacture of tensile test specimen and tested its tensile strength with universal test machine 100kN Tensilon RTF 2410, at room temperature with constant crosshead speed. From tensile test results using single and double layers showed that double mesh-peel ply can increase tensile strength 14% and Young modulus 17%.

Vacuum mechatronics

NASA Technical Reports Server (NTRS)

Hackwood, Susan; Belinski, Steven E.; Beni, Gerardo

1989-01-01

The discipline of vacuum mechatronics is defined as the design and development of vacuum-compatible computer-controlled mechanisms for manipulating, sensing and testing in a vacuum environment. The importance of vacuum mechatronics is growing with an increased application of vacuum in space studies and in manufacturing for material processing, medicine, microelectronics, emission studies, lyophylisation, freeze drying and packaging. The quickly developing field of vacuum mechatronics will also be the driving force for the realization of an advanced era of totally enclosed clean manufacturing cells. High technology manufacturing has increasingly demanding requirements for precision manipulation, in situ process monitoring and contamination-free environments. To remove the contamination problems associated with human workers, the tendency in many manufacturing processes is to move towards total automation. This will become a requirement in the near future for e.g., microelectronics manufacturing. Automation in ultra-clean manufacturing environments is evolving into the concept of self-contained and fully enclosed manufacturing. A Self Contained Automated Robotic Factory (SCARF) is being developed as a flexible research facility for totally enclosed manufacturing. The construction and successful operation of a SCARF will provide a novel, flexible, self-contained, clean, vacuum manufacturing environment. SCARF also requires very high reliability and intelligent control. The trends in vacuum mechatronics and some of the key research issues are reviewed.

The MEMS Knudsen Compressor as a Vacuum Pump for Space Exploration Applications

NASA Technical Reports Server (NTRS)

Vargo, S. E.; Muntz, E. P.; Tang, W. C.

2000-01-01

Several lander, probe and rover missions currently under study at the Jet Propulsion Laboratory (JPL) and especially in the Microdevices Laboratory (MDL) Center for Space Microelectronics Technology, focus on utilizing microelectromechanical systems (MEMS) based instruments for science data gathering. These small instruments and NASA's commitment to "faster, better, cheaper" type missions has brought about the need for novel approaches to satisfying mission requirements. Existing in-situ instrument systems clearly lack novel and integrated methods for satisfying their vacuum needs. One attractive candidate for a MEMS vacuum pump is the Knudsen Compressor, which operates based on thermal transpiration. Thermal transpiration describes gas flows induced by temperature differences maintained across orifices, porous membranes or capillary tubes under rarefied conditions. This device has two overwhelmingly attractive features as a MEMS vacuum pump - no moving parts and no fluids. An initial estimate of a Knudsen Compressor's pumping power requirements for a surface atmospheric sampling task on Mars is less than 80 mW, significantly below than alternative pumps. Due to the relatively low energy use for this task and the applicability of the Knudsen Compressor to other applications, the development of a Knudsen Compressor utilizing MEMS fabrication techniques has been initiated. This paper discusses the initial fabrication of a single-stage MEMS Knudsen Compressor vacuum pump, provides performance criteria such as pumping speed, size, energy use and ultimate pressure and details vacuum pump applications in several MDL related in-situ instruments.

Power and Thermal Technology for Air and Space-Scientific Research Program Delivery Order 0003: Electrical Technology Component Development

DTIC Science & Technology

2007-03-01

specific contact resistivity of Ti/AlNi/Au 24 21 The full view 3D model of the IGBT ………………………………….. 25 22 2D temperature distribution of the SiC...comprised of multiple materials. The representative geometry of a Si isolated gated bipolar transistor ( IGBT ) was chosen for the initial simulation...samples annealed at 650°C for 30 minutes in either the tube furnace with an oxygen gettering system or in the vacuum chamber, represented the superior

Doped organic transistors operating in the inversion and depletion regime

PubMed Central

Lüssem, Björn; Tietze, Max L.; Kleemann, Hans; Hoßbach, Christoph; Bartha, Johann W.; Zakhidov, Alexander; Leo, Karl

2013-01-01

The inversion field-effect transistor is the basic device of modern microelectronics and is nowadays used more than a billion times on every state-of-the-art computer chip. In the future, this rigid technology will be complemented by flexible electronics produced at extremely low cost. Organic field-effect transistors have the potential to be the basic device for flexible electronics, but still need much improvement. In particular, despite more than 20 years of research, organic inversion mode transistors have not been reported so far. Here we discuss the first realization of organic inversion transistors and the optimization of organic depletion transistors by our organic doping technology. We show that the transistor parameters—in particular, the threshold voltage and the ON/OFF ratio—can be controlled by the doping concentration and the thickness of the transistor channel. Injection of minority carriers into the doped transistor channel is achieved by doped contacts, which allows forming an inversion layer. PMID:24225722

On current transients in MoS2 Field Effect Transistors.

PubMed

Macucci, Massimo; Tambellini, Gerry; Ovchinnikov, Dmitry; Kis, Andras; Iannaccone, Giuseppe; Fiori, Gianluca

2017-09-14

We present an experimental investigation of slow transients in the gate and drain currents of MoS 2 -based transistors. We focus on the measurement of both the gate and drain currents and, from the comparative analysis of the current transients, we conclude that there are at least two independent trapping mechanisms: trapping of charges in the silicon oxide substrate, occurring with time constants of the order of tens of seconds and involving charge motion orthogonal to the MoS 2 sheet, and trapping at the channel surface, which occurs with much longer time constants, in particular when the device is in a vacuum. We observe that the presence of such slow phenomena makes it very difficult to perform reliable low-frequency noise measurements, requiring a stable and repeatable steady-state bias point condition, and may explain the sometimes contradictory results that can be found in the literature about the dependence of the flicker noise power spectral density on gate bias.

Radio frequency analog electronics based on carbon nanotube transistors

PubMed Central

Kocabas, Coskun; Kim, Hoon-sik; Banks, Tony; Rogers, John A.; Pesetski, Aaron A.; Baumgardner, James E.; Krishnaswamy, S. V.; Zhang, Hong

2008-01-01

The potential to exploit single-walled carbon nanotubes (SWNTs) in advanced electronics represents a continuing, major source of interest in these materials. However, scalable integration of SWNTs into circuits is challenging because of difficulties in controlling the geometries, spatial positions, and electronic properties of individual tubes. We have implemented solutions to some of these challenges to yield radio frequency (RF) SWNT analog electronic devices, such as narrow band amplifiers operating in the VHF frequency band with power gains as high as 14 dB. As a demonstration, we fabricated nanotube transistor radios, in which SWNT devices provide all of the key functions, including resonant antennas, fixed RF amplifiers, RF mixers, and audio amplifiers. These results represent important first steps to practical implementation of SWNTs in high-speed analog circuits. Comparison studies indicate certain performance advantages over silicon and capabilities that complement those in existing compound semiconductor technologies. PMID:18227509

Design considerations for FET-gated power transistors

NASA Technical Reports Server (NTRS)

Chen, D. Y.; Chin, S. A.

1983-01-01

An FET-bipolar combinational power transistor configuration (tested up to 300 V, 20 A at 100 kHz) is described. The critical parameters for integrating the chips in hybrid form are examined, and an effort to optimize the overall characteristics of the configuration is discussed. Chip considerations are examined with respect to the voltage and current rating of individual chips, the FET surge capability, the choice of triple diffused transistor or epitaxial transistor for the bipolar element, the current tailing effect, and the implementation of the bipolar transistor and an FET as single chip or separate chips. Package considerations are discussed with respect to package material and geometry, surge current capability of bipolar base terminal bonding, and power losses distribution.

CMOS-based carbon nanotube pass-transistor logic integrated circuits

PubMed Central

Ding, Li; Zhang, Zhiyong; Liang, Shibo; Pei, Tian; Wang, Sheng; Li, Yan; Zhou, Weiwei; Liu, Jie; Peng, Lian-Mao

2012-01-01

Field-effect transistors based on carbon nanotubes have been shown to be faster and less energy consuming than their silicon counterparts. However, ensuring these advantages are maintained for integrated circuits is a challenge. Here we demonstrate that a significant reduction in the use of field-effect transistors can be achieved by constructing carbon nanotube-based integrated circuits based on a pass-transistor logic configuration, rather than a complementary metal-oxide semiconductor configuration. Logic gates are constructed on individual carbon nanotubes via a doping-free approach and with a single power supply at voltages as low as 0.4 V. The pass-transistor logic configurarion provides a significant simplification of the carbon nanotube-based circuit design, a higher potential circuit speed and a significant reduction in power consumption. In particular, a full adder, which requires a total of 28 field-effect transistors to construct in the usual complementary metal-oxide semiconductor circuit, uses only three pairs of n- and p-field-effect transistors in the pass-transistor logic configuration. PMID:22334080

Triple-mode single-transistor graphene amplifier and its applications.

PubMed

Yang, Xuebei; Liu, Guanxiong; Balandin, Alexander A; Mohanram, Kartik

2010-10-26

We propose and experimentally demonstrate a triple-mode single-transistor graphene amplifier utilizing a three-terminal back-gated single-layer graphene transistor. The ambipolar nature of electronic transport in graphene transistors leads to increased amplifier functionality as compared to amplifiers built with unipolar semiconductor devices. The ambipolar graphene transistors can be configured as n-type, p-type, or hybrid-type by changing the gate bias. As a result, the single-transistor graphene amplifier can operate in the common-source, common-drain, or frequency multiplication mode, respectively. This in-field controllability of the single-transistor graphene amplifier can be used to realize the modulation necessary for phase shift keying and frequency shift keying, which are widely used in wireless applications. It also offers new opportunities for designing analog circuits with simpler structure and higher integration densities for communications applications.

Vacuum Permeator Analysis for Extraction of Tritium from DCLL Blankets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Humrickhouse, Paul Weston; Merrill, Brad Johnson

2014-11-01

It is envisioned that tritium will be extracted from DCLL blankets using a vacuum permeator. We derive here an analytical solution for the extraction efficiency of a permeator tube, which is a function of only two dimensionless numbers: one that indicates whether radial transport is limited in the PbLi or in the solid membrane, and another that is the ratio of axial and radial transport times in the PbLi. The permeator efficiency is maximized by decreasing the velocity and tube diameter, and increasing the tube length. This is true regardless of the mass transport correlation used; we review several heremore » and find that they differ little, and the choice of correlation is not a source of significant uncertainty here. The PbLi solubility, on the other hand, is a large source of uncertainty, and we identify upper and lower bounds from the literature data. Under the most optimistic assumptions, we find that a ferritic steel permeator operating at 550 °C will need to be at least an order of magnitude larger in volume than previous conceptual designs using niobium and operating at higher temperatures.« less

Thermal transistor utilizing gas-liquid transition.

PubMed

Komatsu, Teruhisa S; Ito, Nobuyasu

2011-01-01

We propose a simple thermal transistor, a device to control heat current. In order to effectively change the current, we utilize the gas-liquid transition of the heat-conducting medium (fluid) because the gas region can act as a good thermal insulator. The three terminals of the transistor are located at both ends and the center of the system, and are put into contact with distinct heat baths. The key idea is a special arrangement of the three terminals. The temperature at one end (the gate temperature) is used as an input signal to control the heat current between the center (source, hot) and another end (drain, cold). Simulating the nanoscale systems of this transistor, control of heat current is demonstrated. The heat current is effectively cut off when the gate temperature is cold and it flows normally when it is hot. By using an extended version of this transistor, we also simulate a primitive application for an inverter.

Water-gel for gating graphene transistors.

PubMed

Kim, Beom Joon; Um, Soong Ho; Song, Woo Chul; Kim, Yong Ho; Kang, Moon Sung; Cho, Jeong Ho

2014-05-14

Water, the primary electrolyte in biology, attracts significant interest as an electrolyte-type dielectric material for transistors compatible with biological systems. Unfortunately, the fluidic nature and low ionic conductivity of water prevents its practical usage in such applications. Here, we describe the development of a solid state, megahertz-operating, water-based gate dielectric system for operating graphene transistors. The new electrolyte systems were prepared by dissolving metal-substituted DNA polyelectrolytes into water. The addition of these biocompatible polyelectrolytes induced hydrogelation to provide solid-state integrity to the system. They also enhanced the ionic conductivities of the electrolytes, which in turn led to the quick formation of an electric double layer at the graphene/electrolyte interface that is beneficial for modulating currents in graphene transistors at high frequencies. At the optimized conditions, the Na-DNA water-gel-gated flexible transistors and inverters were operated at frequencies above 1 MHz and 100 kHz, respectively.

Fatigue induced cracking in aluminum LN-2 shroud of 39 foot vacuum chamber

NASA Technical Reports Server (NTRS)

Edwards, A. A.

1984-01-01

Fourteen years after completion of Ford's 39-foot space simulation chamber, leaks began to appear in its LN2 shroud. Although the shroud had been tight since its acceptance, cracks appeared in 1983 in some of the field welds of the one inch tubes which interconnect the LN2 panels. The resulting leaks were large enough to prevent pump down to high vacuum and could be heard easily when the chamber was at ambient conditions. New cracks appeared during each thermal cycle making it impossible to utilize the chamber for thermal vacuum testing. The analysis presented here implies that many, if not all, of the aluminum LN2 shrouds now in use may be in various stages of fatigue failure. The probability is high that fatigue cracks are working through the aluminum tubing in heat-affected zones of some field welds. The cracks may not be apparent yet, but after the shroud has experienced a certain number of thermal cycles these cracks will work through the material and become serious leaks. Fortunately, appropriate planning, analysis, and checking can, with a relatively small expenditure of money, help to avoid large and unexpected shroud failures and keep the chamber operational as long as it is needed.

VACUUM TRAP

DOEpatents

Gordon, H.S.

1959-09-15

An improved adsorption vacuum trap for use in vacuum systems was designed. The distinguishing feature is the placement of a plurality of torsionally deformed metallic fins within a vacuum jacket extending from the walls to the central axis so that substantially all gas molecules pass through the jacket will impinge upon the fin surfaces. T fins are heated by direct metallic conduction, thereby ol taining a uniform temperature at the adeorbing surfaces so that essentially all of the condensible impurities from the evacuating gas are removed from the vacuum system.

Quality factors, antioxidant activity, and sensory properties of jet-tube dried rabbiteye blueberries.

PubMed

Pallas, Laura A; Pegg, Ronald B; Kerr, William L

2013-06-01

Rabbiteye blueberries are an excellent source of nutrients and phytochemicals. They are often dried, which can degrade health-promoting compounds. Means of shortening exposure to high-temperature drying air are desirable. Five cultivars of rabbiteye blueberries ('Premier', 'Tifblue', 'Brightwell', 'Alapaha', and 'Powderblue') were dried in a jet-tube fluidized bed air dryer with varying pretreatments including mechanical abrasion and osmotic dehydration. Drying time ranged from 66 to 95 min at 107 °C, achieving a final water activity of 0.347-0.605. Prior osmotic dehydration significantly reduced the drying time. Vacuum osmotic dehydration for 70 min achieved similar moisture contents to soaking blueberries for 24 h. Jet-tube dried blueberries exhibited greater color saturation than commercially available blueberries. While drying reduced the total monomeric anthocyanin (TMA) content, this occurred to a lesser extent than by other processing methods. The total phenolics content (TPC) and antioxidant capacity (H-ORACFL values) increased after drying. 'Premier' was the most preferred vacuum-infused dried blueberry, with a water activity (aw) of 0.53 and 157 g H2O kg(-1). 'Tifblue' was most preferred amongst the overnight-infused and also unsweetened dried blueberries. Jet-tube drying can substantially reduce drying times while yielding blueberries with good color, sensory properties, TMA, TPC, and H-ORACFL values. Furthermore, some cultivars produce better-quality dried blueberries than others. © 2012 Society of Chemical Industry.

Field effect transistors improve buffer amplifier

NASA Technical Reports Server (NTRS)

1967-01-01

Unity gain buffer amplifier with a Field Effect Transistor /FET/ differential input stage responds much faster than bipolar transistors when operated at low current levels. The circuit uses a dual FET in a unity gain buffer amplifier having extremely high input impedance, low bias current requirements, and wide bandwidth.

Characterization of the microstructure of Nb-1wt.%Zr-0.1wt.%C tubes as affected by thermomechanical processing

NASA Technical Reports Server (NTRS)

Uz, Mehmet; Titran, Robert H.

1993-01-01

Microstructure of Nb-1Zr-0.1C tubes were characterized as affected by extrusion temperature of the tube shell and its thermomechanical processing to tubing. Two tube shells of about 40-mm outside diameter (OD) and 25-mm inside diameter (ID) were extruded 8:1 from a vacuum arc-melted ingot at 1900 and 1550 K. Two different OD tubes of approximately 0.36-mm wall thickness were fabricated from each tube shell by a series of 26 cold drawing operations with two in process anneals. The microstructure of tube shells and the tubing before and after a 2-step heat treatment were characterized. Residue extracted chemically from each sample was also analyzed to identify the precipitates. The results concerning the effect of the initial extrusion temperature and subsequent processing on the microstructure of the tubes are presented together with a review of results from similar work on Nb-1Zr-0.1C sheet stock.

[Increasing the anode characteristics of sharp-focused Coolidge X-ray tubes by changing from a high to a low vacuum].

PubMed

Kanikovskiĭ, V B

2002-01-01

The anode characteristics of up-to-date sharp-focused Coolidge X-ray tubes are analyzed. The reason for differences in the real anode characteristics from theoretical ones has been found to be a higher tube gas pressure than that accepted. There is evidence that there are new third-class X-tubes--electronic tubes with compensation for negative volumetric charge of electrons with positive gas ions.

Photon-triggered nanowire transistors

NASA Astrophysics Data System (ADS)

Kim, Jungkil; Lee, Hoo-Cheol; Kim, Kyoung-Ho; Hwang, Min-Soo; Park, Jin-Sung; Lee, Jung Min; So, Jae-Pil; Choi, Jae-Hyuck; Kwon, Soon-Hong; Barrelet, Carl J.; Park, Hong-Gyu

2017-10-01

Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 106. A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

Photon-triggered nanowire transistors.

PubMed

Kim, Jungkil; Lee, Hoo-Cheol; Kim, Kyoung-Ho; Hwang, Min-Soo; Park, Jin-Sung; Lee, Jung Min; So, Jae-Pil; Choi, Jae-Hyuck; Kwon, Soon-Hong; Barrelet, Carl J; Park, Hong-Gyu

2017-10-01

Photon-triggered electronic circuits have been a long-standing goal of photonics. Recent demonstrations include either all-optical transistors in which photons control other photons or phototransistors with the gate response tuned or enhanced by photons. However, only a few studies report on devices in which electronic currents are optically switched and amplified without an electrical gate. Here we show photon-triggered nanowire (NW) transistors, photon-triggered NW logic gates and a single NW photodetection system. NWs are synthesized with long crystalline silicon (CSi) segments connected by short porous silicon (PSi) segments. In a fabricated device, the electrical contacts on both ends of the NW are connected to a single PSi segment in the middle. Exposing the PSi segment to light triggers a current in the NW with a high on/off ratio of >8 × 10 6 . A device that contains two PSi segments along the NW can be triggered using two independent optical input signals. Using localized pump lasers, we demonstrate photon-triggered logic gates including AND, OR and NAND gates. A photon-triggered NW transistor of diameter 25 nm with a single 100 nm PSi segment requires less than 300 pW of power. Furthermore, we take advantage of the high photosensitivity and fabricate a submicrometre-resolution photodetection system. Photon-triggered transistors offer a new venue towards multifunctional device applications such as programmable logic elements and ultrasensitive photodetectors.

Operational stability of solution-processed indium-oxide thin-film transistors: Environmental condition and electrical stress

NASA Astrophysics Data System (ADS)

Baang, Sungkeun; Lee, Hyeonju; Zhang, Xue; Park, Jaehoon; Kim, Won-Pyo; Ko, Young-Woong; Piao, Shang Hao; Choi, Hyoung Jin; Kwon, Jin-Hyuk; Bae, Jin-Hyuk

2018-01-01

We investigate the operational stability of bottom-gate/top-contact-structured indium-oxide (In2O3) thin-film transistors (TFTs) in atmospheric air and under vacuum. Based on the thermogravimetric analysis of the In2O3 precursor solution, we utilize a thermal annealing process at 400 °C for 40 min to prepare the In2O3 films. The results of X-ray photoemission spectroscopy and field-emission scanning electron microscopy show that the electron is the majority carrier in the In2O3 semiconductor film prepared by a spin-coating method and that the film has a polycrystalline morphology with grain boundaries. The fabricated In2O3 TFTs operate in an n-type enhancement mode. When constant drain and gate voltages are applied, these TFTs in atmospheric air exhibit a more acute decay in the drain currents with time compared to that observed under vacuum. In the positive gate-bias stress experiments, a decrease in the field-effect mobility and a positive shift in the threshold voltage are invariably observed both in atmospheric air and under vacuum, but such characteristic variations are also found to be more pronounced for the atmospheric-air case. These results are explained in terms of the electron-trapping phenomenon at the grain boundaries in the In2O3 semiconductor, as well as the electrostatic interactions between electrons and polar water molecules.

Modeling of short channel MOS transistors

NASA Technical Reports Server (NTRS)

Lin, H. C.; Kokalis, D. P.; Bandy, W. R.

1976-01-01

Higher frequency response in MOS technology can be obtained by shortening the channel length. One approach for doing this involves an employment of higher resolution lithography technology. A second approach makes use of a double-diffused MOS transistor (DMOS). It is pointed out that the ordinary method of modeling the transistors used in both approaches is not accurate. An investigation is conducted of the questions which have to be considered for DMOS modeling. The modeling of a short channel MOS transistor is discussed, taking into account the derivation of the threshold voltage equation. Excellent agreement between theoretical and experimental data shows the accuracy of the described modeling approach.

Pass-transistor very large scale integration

NASA Technical Reports Server (NTRS)

Maki, Gary K. (Inventor); Bhatia, Prakash R. (Inventor)

2004-01-01

Logic elements are provided that permit reductions in layout size and avoidance of hazards. Such logic elements may be included in libraries of logic cells. A logical function to be implemented by the logic element is decomposed about logical variables to identify factors corresponding to combinations of the logical variables and their complements. A pass transistor network is provided for implementing the pass network function in accordance with this decomposition. The pass transistor network includes ordered arrangements of pass transistors that correspond to the combinations of variables and complements resulting from the logical decomposition. The logic elements may act as selection circuits and be integrated with memory and buffer elements.

Cost of Maple Sap Production for Various Size Tubing Operations

Treesearch

Niel K. Huyler

2000-01-01

Reports sap production costs for small (500 to 1,000 taps), medium (1,000 to 5,000), and large (5,000 to 15,000) maple syrup operations that use plastic tubing with vacuum pumping. The average annual operating cost per tap ranged from $4.64 for a 500-tap sugarbush operation to $1.84 for a sugarbush with 10,000 taps. The weighted average was $2.87 per tap or $11.48 per...

Ultrashort Channel Length Black Phosphorus Field-Effect Transistors.

PubMed

Miao, Jinshui; Zhang, Suoming; Cai, Le; Scherr, Martin; Wang, Chuan

2015-09-22

This paper reports high-performance top-gated black phosphorus (BP) field-effect transistors with channel lengths down to 20 nm fabricated using a facile angle evaporation process. By controlling the evaporation angle, the channel length of the transistors can be reproducibly controlled to be anywhere between 20 and 70 nm. The as-fabricated 20 nm top-gated BP transistors exhibit respectable on-state current (174 μA/μm) and transconductance (70 μS/μm) at a VDS of 0.1 V. Due to the use of two-dimensional BP as the channel material, the transistors exhibit relatively small short channel effects, preserving a decent on-off current ratio of 10(2) even at an extremely small channel length of 20 nm. Additionally, unlike the unencapsulated BP devices, which are known to be chemically unstable in ambient conditions, the top-gated BP transistors passivated by the Al2O3 gate dielectric layer remain stable without noticeable degradation in device performance after being stored in ambient conditions for more than 1 week. This work demonstrates the great promise of atomically thin BP for applications in ultimately scaled transistors.

Low electron mobility of field-effect transistor determined by modulated magnetoresistance

NASA Astrophysics Data System (ADS)

Tauk, R.; Łusakowski, J.; Knap, W.; Tiberj, A.; Bougrioua, Z.; Azize, M.; Lorenzini, P.; Sakowicz, M.; Karpierz, K.; Fenouillet-Beranger, C.; Cassé, M.; Gallon, C.; Boeuf, F.; Skotnicki, T.

2007-11-01

Room temperature magnetotransport experiments were carried out on field-effect transistors in magnetic fields up to 10 T. It is shown that measurements of the transistor magnetoresistance and its first derivative with respect to the gate voltage allow the derivation of the electron mobility in the gated part of the transistor channel, while the access/contact resistances and the transistor gate length need not be known. We demonstrate the potential of this method using GaN and Si field-effect transistors and discuss its importance for mobility measurements in transistors with nanometer gate length.

Application of the Johnson criteria to graphene transistors

NASA Astrophysics Data System (ADS)

Kelly, M. J.

2013-12-01

For 60 years, the Johnson criteria have guided the development of materials and the materials choices for field-effect and bipolar transistor technology. Intrinsic graphene is a semi-metal, precluding transistor applications, but only under lateral bias is a gap opened and transistor action possible. This first application of the Johnson criteria to biased graphene suggests that this material will struggle to ever achieve competitive commercial applications.

Oscillatory Threshold Logic

PubMed Central

Borresen, Jon; Lynch, Stephen

2012-01-01

In the 1940s, the first generation of modern computers used vacuum tube oscillators as their principle components, however, with the development of the transistor, such oscillator based computers quickly became obsolete. As the demand for faster and lower power computers continues, transistors are themselves approaching their theoretical limit and emerging technologies must eventually supersede them. With the development of optical oscillators and Josephson junction technology, we are again presented with the possibility of using oscillators as the basic components of computers, and it is possible that the next generation of computers will be composed almost entirely of oscillatory devices. Here, we demonstrate how coupled threshold oscillators may be used to perform binary logic in a manner entirely consistent with modern computer architectures. We describe a variety of computational circuitry and demonstrate working oscillator models of both computation and memory. PMID:23173034

Oscillatory threshold logic.

PubMed

Borresen, Jon; Lynch, Stephen

2012-01-01

In the 1940s, the first generation of modern computers used vacuum tube oscillators as their principle components, however, with the development of the transistor, such oscillator based computers quickly became obsolete. As the demand for faster and lower power computers continues, transistors are themselves approaching their theoretical limit and emerging technologies must eventually supersede them. With the development of optical oscillators and Josephson junction technology, we are again presented with the possibility of using oscillators as the basic components of computers, and it is possible that the next generation of computers will be composed almost entirely of oscillatory devices. Here, we demonstrate how coupled threshold oscillators may be used to perform binary logic in a manner entirely consistent with modern computer architectures. We describe a variety of computational circuitry and demonstrate working oscillator models of both computation and memory.

Microscopic origin of low frequency noise in MoS{sub 2} field-effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ghatak, Subhamoy; Jain, Manish; Ghosh, Arindam

2014-09-01

We report measurement of low frequency 1/f noise in molybdenum di-sulphide (MoS{sub 2}) field-effect transistors in multiple device configurations including MoS{sub 2} on silicon dioxide as well as MoS{sub 2}-hexagonal boron nitride (hBN) heterostructures. All as-fabricated devices show similar magnitude of noise with number fluctuation as the dominant mechanism at high temperatures and density, although the calculated density of traps is two orders of magnitude higher than that at the SiO{sub 2} interface. Measurements on the heterostructure devices with vacuum annealing and dual gated configuration reveals that along with the channel, metal-MoS{sub 2} contacts also play a significant role inmore » determining noise magnitude in these devices.« less

Outlook and emerging semiconducting materials for ambipolar transistors.

PubMed

Bisri, Satria Zulkarnaen; Piliego, Claudia; Gao, Jia; Loi, Maria Antonietta

2014-02-26

Ambipolar or bipolar transistors are transistors in which both holes and electrons are mobile inside the conducting channel. This device allows switching among several states: the hole-dominated on-state, the off-state, and the electron-dominated on-state. In the past year, it has attracted great interest in exotic semiconductors, such as organic semiconductors, nanostructured materials, and carbon nanotubes. The ability to utilize both holes and electrons inside one device opens new possibilities for the development of more compact complementary metal-oxide semiconductor (CMOS) circuits, and new kinds of optoelectronic device, namely, ambipolar light-emitting transistors. This progress report highlights the recent progresses in the field of ambipolar transistors, both from the fundamental physics and application viewpoints. Attention is devoted to the challenges that should be faced for the realization of ambipolar transistors with different material systems, beginning with the understanding of the importance of interface modification, which heavily affects injections and trapping of both holes and electrons. The recent development of advanced gating applications, including ionic liquid gating, that open up more possibility to realize ambipolar transport in materials in which one type of charge carrier is highly dominant is highlighted. Between the possible applications of ambipolar field-effect transistors, we focus on ambipolar light-emitting transistors. We put this new device in the framework of its prospective for general lightings, embedded displays, current-driven laser, as well as for photonics-electronics interconnection. © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Flexible Proton-Gated Oxide Synaptic Transistors on Si Membrane.

PubMed

Zhu, Li Qiang; Wan, Chang Jin; Gao, Ping Qi; Liu, Yang Hui; Xiao, Hui; Ye, Ji Chun; Wan, Qing

2016-08-24

Ion-conducting materials have received considerable attention for their applications in fuel cells, electrochemical devices, and sensors. Here, flexible indium zinc oxide (InZnO) synaptic transistors with multiple presynaptic inputs gated by proton-conducting phosphorosilicate glass-based electrolyte films are fabricated on ultrathin Si membranes. Transient characteristics of the proton gated InZnO synaptic transistors are investigated, indicating stable proton-gating behaviors. Short-term synaptic plasticities are mimicked on the proposed proton-gated synaptic transistors. Furthermore, synaptic integration regulations are mimicked on the proposed synaptic transistor networks. Spiking logic modulations are realized based on the transition between superlinear and sublinear synaptic integration. The multigates coupled flexible proton-gated oxide synaptic transistors may be interesting for neuroinspired platforms with sophisticated spatiotemporal information processing.

The trap DOS in small molecule organic semiconductors: A quantitative comparison of thin-film transistors with single crystals

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang; Haas, Simon; Pernstich, Kurt; Mathis, Thomas; Batlogg, Bertram

2010-03-01

Our study shows that it is possible to reach one of the ultimate goals of organic electronics: organic field-effect transistors can be produced with trap densities as low as in the bulk of single crystals. Several analytical methods to calculate the spectral density of localized states in the band gap (trap DOS) from measured data were used to clarify, if the different methods lead to similar results. We then compared quantitatively trap DOS information from the literature, correcting for differences due to different calculation methods. In the bulk of single crystals the trap DOS is lower by several orders of magnitude than in thin films. The compilation of all data strongly suggests that structural defects at grain boundaries are the main cause of ``fast'' traps in TFT's made with vacuum-evaporated pentacene. For high-performance transistors made with small molecule semiconductors such as rubrene it is essential to reduce the dipolar disorder caused by water adsorbed on the gate dielectric. We will discuss to what degree band broadening due to the thermal fluctuations of the intermolecular transfer integral is reflected in the trap DOS very close (<0.15 eV) to the mobility edge.

Probing surface states in PbS nanocrystal films using pentacene field effect transistors: controlling carrier concentration and charge transport in pentacene.

PubMed

Park, Byoungnam; Whitham, Kevin; Bian, Kaifu; Lim, Yee-Fun; Hanrath, Tobias

2014-12-21

We used a bilayer field effect transistor (FET) consisting of a thin PbS nanocrystals (NCs) film interfaced with vacuum-deposited pentacene to probe trap states in NCs. We interpret the observed threshold voltage shift in context of charge carrier trapping by PbS NCs and relate the magnitude of the threshold voltage shift to the number of trapped carriers. We explored a series of NC surface ligands to modify the interface between PbS NCs and pentacene and demonstrate the impact of interface chemistry on charge carrier density and the FET mobility in a pentacene FET.

Novel Low-Cost, Low-Power Miniature Thermionic Cathode Developed for Microwave/Millimeter Wave Tube and Cathode Ray Tube Applications

NASA Technical Reports Server (NTRS)

Wintucky, Edwin G.

1999-01-01

A low cost, small size and mass, low heater power, durable high-performance barium dispenser thermionic cathode has been developed that offers significant advancements in the design, manufacture, and performance of the electron sources used in vacuum electronic devices--such as microwave (and millimeter wave) traveling-wave tubes (TWT's)--and in display devices such as high-brightness, high-resolution cathode ray tubes (CRT's). The lower cathode heater power and the reduced size and mass of the new cathode are expected to be especially beneficial in TWT's for deep space communications, where future missions are requiring smaller spacecraft, higher data transfer rates (higher frequencies and radiofrequency output power), and greater electrical efficiency. Also expected to benefit are TWT's for commercial and government communication satellites, for both low and geosynchronous Earth orbit, with additional benefits offered by lower cost and potentially higher cathode current loading. A particularly important TWT application is in the microwave power module (MPM), which is a hybrid microwave (or millimeter wave) amplifier consisting of a low-noise solid state driver, a vacuum power booster (small TWT), and an electronic power conditioner integrated into a single compact package. The attributes of compactness and potentially high electrical efficiency make the MPM very attractive for many commercial and government (civilian and defense) applications in communication and radar systems. The MPM is already finding application in defense electronic systems and is under development by NASA for deep space communications. However, for the MPM to become competitive and commercially successful, a major reduction in cost must be achieved.

Proton Damage Effects on Carbon Nanotube Field-Effect Transistors

DTIC Science & Technology

2014-06-19

PROTON DAMAGE EFFECTS ON CARBON NANOTUBE FIELD-EFFECT TRANSISTORS THESIS Evan R. Kemp, Ctr...United States. AFIT-ENP-T-14-J-39 PROTON DAMAGE EFFECTS ON CARBON NANOTUBE FIELD-EFFECT TRANSISTORS THESIS Presented to...PROTON DAMAGE EFFECTS ON CARBON NANOTUBE FIELD-EFFECT TRANSISTORS Evan R. Kemp, BS Ctr, USAF Approved: // Signed

A nanoscale piezoelectric transformer for low-voltage transistors.

PubMed

Agarwal, Sapan; Yablonovitch, Eli

2014-11-12

A novel piezoelectric voltage transformer for low-voltage transistors is proposed. Placing a piezoelectric transformer on the gate of a field-effect transistor results in the piezoelectric transformer field-effect transistor that can switch at significantly lower voltages than a conventional transistor. The piezoelectric transformer operates by using one piezoelectric to squeeze another piezoelectric to generate a higher output voltage than the input voltage. Multiple piezoelectrics can be used to squeeze a single piezoelectric layer to generate an even higher voltage amplification. Coupled electrical and mechanical modeling in COMSOL predicts a 12.5× voltage amplification for a six-layer piezoelectric transformer. This would lead to more than a 150× reduction in the power needed for communications.

Titanyl phthalocyanine ambipolar thin film transistors making use of carbon nanotube electrodes

NASA Astrophysics Data System (ADS)

Coppedè, Nicola; Valitova, Irina; Mahvash, Farzaneh; Tarabella, Giuseppe; Ranzieri, Paolo; Iannotta, Salvatore; Santato, Clara; Martel, Richard; Cicoira, Fabio

2014-12-01

The capability of efficiently injecting charge carriers into organic films and finely tuning their morphology and structure is crucial to improve the performance of organic thin film transistors (OTFTs). In this work, we investigate OTFTs employing carbon nanotubes (CNTs) as the source-drain electrodes and, as the organic semiconductor, thin films of titanyl phthalocyanine (TiOPc) grown by supersonic molecular beam deposition (SuMBD). While CNT electrodes have shown an unprecedented ability to improve charge injection in OTFTs, SuMBD is an effective technique to tune film morphology and structure. Varying the substrate temperature during deposition, we were able to grow both amorphous (low substrate temperature) and polycrystalline (high substrate temperature) films of TiOPc. Regardless of the film morphology and structure, CNT electrodes led to superior charge injection and transport performance with respect to benchmark Au electrodes. Vacuum annealing of polycrystalline TiOPc films with CNT electrodes yielded ambipolar OTFTs.

Electrochemical doping for lowering contact barriers in organic field effect transistors

PubMed Central

Schaur, Stefan; Stadler, Philipp; Meana-Esteban, Beatriz; Neugebauer, Helmut; Serdar Sariciftci, N.

2012-01-01

By electrochemically p-doping pentacene in the vicinity of the source-drain electrodes in organic field effect transistors the injection barrier for holes is decreased. The focus of this work is put on the influence of the p-doping process on the transistor performance. Cyclic voltammetry performed on a pentacene based transistor exhibits a reversible p-doping response. This doped state is evoked at the transistor injection electrodes. An improvement is observed when comparing transistor characteristics before and after the doping process apparent by an improved transistor on-current. This effect is reflected in the analysis of the contact resistances of the devices. PMID:23483101

Magnetic Vortex Based Transistor Operations

PubMed Central

Kumar, D.; Barman, S.; Barman, A.

2014-01-01

Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan–out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT). PMID:24531235

Magnetic vortex based transistor operations.

PubMed

Kumar, D; Barman, S; Barman, A

2014-02-17

Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan-out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT).

Magnetic Vortex Based Transistor Operations

NASA Astrophysics Data System (ADS)

Kumar, D.; Barman, S.; Barman, A.

2014-02-01

Transistors constitute the backbone of modern day electronics. Since their advent, researchers have been seeking ways to make smaller and more efficient transistors. Here, we demonstrate a sustained amplification of magnetic vortex core gyration in coupled two and three vortices by controlling their relative core polarities. This amplification is mediated by a cascade of antivortex solitons travelling through the dynamic stray field. We further demonstrated that the amplification can be controlled by switching the polarity of the middle vortex in a three vortex sequence and the gain can be controlled by the input signal amplitude. An attempt to show fan-out operation yielded gain for one of the symmetrically placed branches which can be reversed by switching the core polarity of all the vortices in the network. The above observations promote the magnetic vortices as suitable candidates to work as stable bipolar junction transistors (BJT).

High current gain transistor laser

PubMed Central

Liang, Song; Qiao, Lijun; Zhu, Hongliang; Wang, Wei

2016-01-01

A transistor laser (TL), having the structure of a transistor with multi-quantum wells near its base region, bridges the functionality gap between lasers and transistors. However, light emission is produced at the expense of current gain for all the TLs reported up to now, leading to a very low current gain. We propose a novel design of TLs, which have an n-doped InP layer inserted in the emitter ridge. Numerical studies show that a current flow aperture for only holes can be formed in the center of the emitter ridge. As a result, the common emitter current gain can be as large as 143.3, which is over 15 times larger than that of a TL without the aperture. Besides, the effects of nonradiative recombination defects can be reduced greatly because the flow of holes is confined in the center region of the emitter ridge. PMID:27282466

Liquid crystals for organic transistors (Conference Presentation)

NASA Astrophysics Data System (ADS)

Hanna, Jun-ichi; Iino, Hiroaki

2016-09-01

Liquid crystals are a new type of organic semiconductors exhibiting molecular orientation in self-organizing manner, and have high potential for device applications. In fact, various device applications have been proposed so far, including photosensors, solar cells, light emitting diodes, field effect transistors, and so on.. However, device performance in those fabricated with liquid crystals is less than those of devices fabricated with conventional materials in spite of unique features of liquid crystals. Here we discuss how we can utilize the liquid crystallinity in organic transistors and how we can overcome conventional non-liquid crystalline organic transistor materials. Then, we demonstrate high performance organic transistors fabricated with a smectic E liquid crystal of Ph-BTBT-10, which show high mobility of over 10cm2/Vs and high thermal durability of over 200oC in OFETs fabricated with its spin-coated polycrystalline thin films.

Large-current-controllable carbon nanotube field-effect transistor in electrolyte solution

NASA Astrophysics Data System (ADS)

Myodo, Miho; Inaba, Masafumi; Ohara, Kazuyoshi; Kato, Ryogo; Kobayashi, Mikinori; Hirano, Yu; Suzuki, Kazuma; Kawarada, Hiroshi

2015-05-01

Large-current-controllable carbon nanotube field-effect transistors (CNT-FETs) were fabricated with mm-long CNT sheets. The sheets, synthesized by remote-plasma-enhanced CVD, contained both single- and double-walled CNTs. Titanium was deposited on the sheet as source and drain electrodes, and an electrolyte solution was used as a gate electrode (solution gate) to apply a gate voltage to the CNTs through electric double layers formed around the CNTs. The drain current came to be well modulated as electrolyte solution penetrated into the sheets, and one of the solution gate CNT-FETs was able to control a large current of over 2.5 A. In addition, we determined the transconductance parameter per tube and compared it with values for other CNT-FETs. The potential of CNT sheets for applications requiring the control of large current is exhibited in this study.

Transistor circuit increases range of logarithmic current amplifier

NASA Technical Reports Server (NTRS)

Gilmour, G.

1966-01-01

Circuit increases the range of a logarithmic current amplifier by combining a commercially available amplifier with a silicon epitaxial transistor. A temperature compensating network is provided for the transistor.

49 CFR 570.56 - Vacuum brake assist unit and vacuum brake system.

Code of Federal Regulations, 2010 CFR

2010-10-01

.... The following requirements apply to vehicles with vacuum brake assist units and vacuum brake systems. (a) Vacuum brake assist unit integrity. The vacuum brake assist unit shall demonstrate integrity as... maintained on the pedal. (1) Inspection procedure. Stop the engine and apply service brake several times to...

The effect of cuff presence and cuff inflation on airway pressure in a canine tracheostomy tube model.

PubMed

Wignall, Jamie R; Baines, Stephen J

2014-01-01

To evaluate the effect of cuff presence and cuff inflation on airway pressure in an inspiratory model of canine tracheostomy. Ex vivo experimental study. Cadaver tracheas from Beagle dogs were attached aborally to a vacuum. Airway pressure and flow rate was measured before and after placement of tracheostomy tubes. None. Adult uncuffed tubes and cuffed tracheostomy tubes (sizes 4, 6, 8, and 10) were placed within tracheas. Cuffs were investigated without inflation and at maximum cuff inflation. Airway pressure was measured at constant airflow rates at 30 and 60 L/min. At set flow rates, airway pressures of tracheostomy tubes were compared to the intact trachea. A size 4 uncuffed tracheostomy tube showed the lowest airway pressure and a size 4 cuffed trachestomy tube with inflation showed the highest airway pressures. For sizes 6, 8, and 10 tubes, the presence of a cuff with and without inflation significantly increased airway pressure. Inflation of a cuff always significantly increased airway pressure. Similar pressure is seen between sizes 4 and 6 uncuffed tubes. Cuffed tracheostomy tubes should not be used unless specifically indicated due to increased airway pressure. © Veterinary Emergency and Critical Care Society 2013.

Stretchable transistors with buckled carbon nanotube films as conducting channels

DOEpatents

Arnold, Michael S; Xu, Feng

2015-03-24

Thin-film transistors comprising buckled films comprising carbon nanotubes as the conductive channel are provided. Also provided are methods of fabricating the transistors. The transistors, which are highly stretchable and bendable, exhibit stable performance even when operated under high tensile strains.

Metal nanoparticle film-based room temperature Coulomb transistor.

PubMed

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-07-01

Single-electron transistors would represent an approach to developing less power-consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations.

Defect healing at room temperature in pentacene thin films and improved transistor performance

NASA Astrophysics Data System (ADS)

Kalb, Wolfgang L.; Meier, Fabian; Mattenberger, Kurt; Batlogg, Bertram

2007-11-01

We report on a healing of defects at room temperature in the organic semiconductor pentacene. This peculiar effect is a direct consequence of the weak intermolecular interaction which is characteristic of organic semiconductors. Pentacene thin-film transistors were fabricated and characterized by in situ gated four-terminal measurements. Under high vacuum conditions (base pressure of order 10-8mbar ), the device performance is found to improve with time. The effective field-effect mobility increases by as much as a factor of 2 and mobilities up to 0.45cm2/Vs were achieved. In addition, the contact resistance decreases by more than an order of magnitude and there is a significant reduction in current hysteresis. Oxygen and nitrogen exposure as well as annealing experiments show the improvement of the electronic parameters to be driven by a thermally promoted process and not by chemical doping. In order to extract the spectral density of trap states from the transistor characteristics, we have implemented a powerful scheme which allows for a calculation of the trap densities with high accuracy in a straightforward fashion. We show the performance improvement to be due to a reduction in the density of shallow traps ⩽0.15eV from the valence band edge, while the energetically deeper traps are essentially unaffected. This work contributes to an understanding of the shallow traps in organic semiconductors and identifies structural point defects within the grains of the polycrystalline thin films as a major cause.

Npn double heterostructure bipolar transistor with ingaasn base region

DOEpatents

Chang, Ping-Chih; Baca, Albert G.; Li, Nein-Yi; Hou, Hong Q.; Ashby, Carol I. H.

2004-07-20

An NPN double heterostructure bipolar transistor (DHBT) is disclosed with a base region comprising a layer of p-type-doped indium gallium arsenide nitride (InGaAsN) sandwiched between n-type-doped collector and emitter regions. The use of InGaAsN for the base region lowers the transistor turn-on voltage, V.sub.on, thereby reducing power dissipation within the device. The NPN transistor, which has applications for forming low-power electronic circuitry, is formed on a gallium arsenide (GaAs) substrate and can be fabricated at commercial GaAs foundries. Methods for fabricating the NPN transistor are also disclosed.

Organic field effect transistor with ultra high amplification

NASA Astrophysics Data System (ADS)

Torricelli, Fabrizio

2016-09-01

High-gain transistors are essential for the large-scale circuit integration, high-sensitivity sensors and signal amplification in sensing systems. Unfortunately, organic field-effect transistors show limited gain, usually of the order of tens, because of the large contact resistance and channel-length modulation. Here we show organic transistors fabricated on plastic foils enabling unipolar amplifiers with ultra-gain. The proposed approach is general and opens up new opportunities for ultra-large signal amplification in organic circuits and sensors.

Parametric study of a concentric coaxial glass tube solar air collector: a theoretical approach

NASA Astrophysics Data System (ADS)

Dabra, Vishal; Yadav, Avadhesh

2017-12-01

Concentric coaxial glass tube solar air collector (CCGTSAC) is a quite innovative development in the field of solar collectors. This type of collector is specially designed to produce hot air. A mathematical model based on the energy conservation equations for small control volumes along the axial direction of concentric coaxial glass tube (CCGT) is developed in this paper. It is applied to predict the effect of thirteen different parameters on the exit air temperature rise and appeared that absorber tube size, length of CCGT, absorptivity of transparent glazing, transmissivity of transparent glazing, absorptivity of absorber coating, inlet or ambient air temperature, mass flow rate, variation of thermo-physical properties of air, wind speed, solar intensity and vacuum present between transparent glazing and absorber tube are significant parameters. Results of the model were analysed to predict the effect of key parameters on the thermal performance of a CCGTSAC for exit air temperature rise about 43.9-58.4 °C.

Parametric study of a concentric coaxial glass tube solar air collector: a theoretical approach

NASA Astrophysics Data System (ADS)

Dabra, Vishal; Yadav, Avadhesh

2018-06-01

Concentric coaxial glass tube solar air collector (CCGTSAC) is a quite innovative development in the field of solar collectors. This type of collector is specially designed to produce hot air. A mathematical model based on the energy conservation equations for small control volumes along the axial direction of concentric coaxial glass tube (CCGT) is developed in this paper. It is applied to predict the effect of thirteen different parameters on the exit air temperature rise and appeared that absorber tube size, length of CCGT, absorptivity of transparent glazing, transmissivity of transparent glazing, absorptivity of absorber coating, inlet or ambient air temperature, mass flow rate, variation of thermo-physical properties of air, wind speed, solar intensity and vacuum present between transparent glazing and absorber tube are significant parameters. Results of the model were analysed to predict the effect of key parameters on the thermal performance of a CCGTSAC for exit air temperature rise about 43.9-58.4 °C.

Improved Vacuum Bazooka

NASA Astrophysics Data System (ADS)

Cockman, John

2003-04-01

This apparatus is a modification to the well-known "vacuum bazooka" (PIRA 2B30.70). My vacuum bazooka is easy to construct and demonstrate, requires no precise fittings, foil, or vacuum grease, and propels ping-pong balls at a tremendous velocity!

Carrier mobility in organic field-effect transistors

NASA Astrophysics Data System (ADS)

Xu, Yong; Benwadih, Mohamed; Gwoziecki, Romain; Coppard, Romain; Minari, Takeo; Liu, Chuan; Tsukagoshi, Kazuhito; Chroboczek, Jan; Balestra, Francis; Ghibaudo, Gerard

2011-11-01

A study of carrier transport in top-gate and bottom-contact TIPS-pentacene organic field-effect transistors (OFETs) based on mobility is presented. Among three mobilities extracted by different methods, the low-field mobility obtained by the Y function exhibits the best reliability and ease for use, whereas the widely applied field-effect mobility is not reliable, particularly in short-channel transistors and at low temperatures. A detailed study of contact transport reveals its strong impact on short-channel transistors, suggesting that a more intrinsic transport analysis is better implemented in relatively longer-channel devices. The observed temperature dependences of mobility are well explained by a transport model with Gaussian-like diffusivity band tails, different from diffusion in localized states band tails. This model explicitly interprets the non-zero constant mobility at low temperatures and clearly demonstrates the effects of disorder and hopping transport on temperature and carrier density dependences of mobility in organic transistors.

SPEAKING IN LIGHT - Jupiter radio signals as deflections of light-emitting electron beams in a vacuum chamber

NASA Astrophysics Data System (ADS)

Petrovic, K.

2015-10-01

Light emitting electron beam generated in a vacuum chamber is used as a medium for visualizing Jupiter's electromagnetic radiation. Dual dipole array antenna is receiving HF radio signals that are next amplified to radiate a strong electromagnetic field capable of influencing the propagation of electron beam in plasma. Installation aims to provide a platform for observing the characteristics of light emitting beam in 3D, as opposed to the experiments with cathode ray tubes in 2-dimensional television screens. Gas giant 'speaking' to us by radio waves bends the light in the tube, allowing us to see and hear the messages of Jupiter - God of light and sky.

Theory of Magnetic Bipolar Transistors

NASA Astrophysics Data System (ADS)

Zutic, Igor; Fabian, Jaroslav; Das Sarma, S.

2003-03-01

We introduce the concept of a magnetic bipolar transistor (MBT) (J. Fabian, I. Zutic, S. Das Sarma, cond-mat/0211639.), which can be realized using already available materials. The transistor has at least one magnetic region (emitter, base, or collector) characterized by spin-splitting of the carrier bands. In addition, nonequilibrium (source) spin in MBTs can be induced by external means (electrically or optically). The theory of ideal MBTs is developed and discussed in the forward active regime where the transistors can amplify signals. It is shown that source spin can be injected from the emitter to the collector. It is predicted that electrical current gain (amplification) can be controlled effectively by magnetic field and source spin. If a base is a ferromagnetic semiconductor we suggest several methods for using spin-polarized bipolar transport (I. Zutic, J. Fabian, S. Das Sarma, Phys. Rev. Lett. f 88, 066603 (2002); J. Fabian, I. Zutic, S. Das Sarma, Phys. Rev. B f 66, 165301 (2002).) to manipulate semiconductor ferromagnetism.

Recent Progress in Entry Radiation Measurements in the NASA Ames Electric ARC Shock Tube Facility

NASA Technical Reports Server (NTRS)

Cruden, Brett A.

2012-01-01

The Electric Arc Shock Tube (EAST) at NASA Ames Research Center is NASA's only working shock tube capable of obtaining conditions representative of entry in a multitude of planetary atmospheres. The facility is capable of mapping spectroscopic signatures of a wide range of planetary entries from the Vacuum Ultraviolet through Mid-Wave Infrared (120-5500 nm). This paper summarizes the tests performed in EAST for Earth, Mars and Venus entries since 2008, then focuses on a specific test case for CO2/N2 mixtures. In particular, the paper will focus on providing information for the proper interpretation of the EAST data.

A steep-slope transistor based on abrupt electronic phase transition

NASA Astrophysics Data System (ADS)

Shukla, Nikhil; Thathachary, Arun V.; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G.; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-01

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep (`sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

A steep-slope transistor based on abrupt electronic phase transition.

PubMed

Shukla, Nikhil; Thathachary, Arun V; Agrawal, Ashish; Paik, Hanjong; Aziz, Ahmedullah; Schlom, Darrell G; Gupta, Sumeet Kumar; Engel-Herbert, Roman; Datta, Suman

2015-08-07

Collective interactions in functional materials can enable novel macroscopic properties like insulator-to-metal transitions. While implementing such materials into field-effect-transistor technology can potentially augment current state-of-the-art devices by providing unique routes to overcome their conventional limits, attempts to harness the insulator-to-metal transition for high-performance transistors have experienced little success. Here, we demonstrate a pathway for harnessing the abrupt resistivity transformation across the insulator-to-metal transition in vanadium dioxide (VO2), to design a hybrid-phase-transition field-effect transistor that exhibits gate controlled steep ('sub-kT/q') and reversible switching at room temperature. The transistor design, wherein VO2 is implemented in series with the field-effect transistor's source rather than into the channel, exploits negative differential resistance induced across the VO2 to create an internal amplifier that facilitates enhanced performance over a conventional field-effect transistor. Our approach enables low-voltage complementary n-type and p-type transistor operation as demonstrated here, and is applicable to other insulator-to-metal transition materials, offering tantalizing possibilities for energy-efficient logic and memory applications.

Enhanced transconductance in a double-gate graphene field-effect transistor

NASA Astrophysics Data System (ADS)

Hwang, Byeong-Woon; Yeom, Hye-In; Kim, Daewon; Kim, Choong-Ki; Lee, Dongil; Choi, Yang-Kyu

2018-03-01

Multi-gate transistors, such as double-gate, tri-gate and gate-all-around transistors are the most advanced Si transistor structure today. Here, a genuine double-gate transistor with a graphene channel is experimentally demonstrated. The top and bottom gates of the double-gate graphene field-effect transistor (DG GFET) are electrically connected so that the conductivity of the graphene channel can be modulated simultaneously by both the top and bottom gate. A single-gate graphene field-effect transistor (SG GFET) with only the top gate is also fabricated as a control device. For systematical analysis, the transfer characteristics of both GFETs were measured and compared. Whereas the maximum transconductance of the SG GFET was 17.1 μS/μm, that of the DG GFET was 25.7 μS/μm, which is approximately a 50% enhancement. The enhancement of the transconductance was reproduced and comprehensively explained by a physics-based compact model for GFETs. The investigation of the enhanced transfer characteristics of the DG GFET in this work shows the possibility of a multi-gate architecture for high-performance graphene transistor technology.

Modeling of charge transport in ion bipolar junction transistors.

PubMed

Volkov, Anton V; Tybrandt, Klas; Berggren, Magnus; Zozoulenko, Igor V

2014-06-17

Spatiotemporal control of the complex chemical microenvironment is of great importance to many fields within life science. One way to facilitate such control is to construct delivery circuits, comprising arrays of dispensing outlets, for ions and charged biomolecules based on ionic transistors. This allows for addressability of ionic signals, which opens up for spatiotemporally controlled delivery in a highly complex manner. One class of ionic transistors, the ion bipolar junction transistors (IBJTs), is especially attractive for these applications because these transistors are functional at physiological conditions and have been employed to modulate the delivery of neurotransmitters to regulate signaling in neuronal cells. Further, the first integrated complementary ionic circuits were recently developed on the basis of these ionic transistors. However, a detailed understanding of the device physics of these transistors is still lacking and hampers further development of components and circuits. Here, we report on the modeling of IBJTs using Poisson's and Nernst-Planck equations and the finite element method. A two-dimensional model of the device is employed that successfully reproduces the main characteristics of the measurement data. On the basis of the detailed concentration and potential profiles provided by the model, the different modes of operation of the transistor are analyzed as well as the transitions between the different modes. The model correctly predicts the measured threshold voltage, which is explained in terms of membrane potentials. All in all, the results provide the basis for a detailed understanding of IBJT operation. This new knowledge is employed to discuss potential improvements of ion bipolar junction transistors in terms of miniaturization and device parameters.

Tube-in-tube thermophotovoltaic generator

DOEpatents

Ashcroft, J.; Campbell, B.; DePoy, D.

1998-06-30

A thermophotovoltaic device includes at least one thermal radiator tube, a cooling tube concentrically disposed within each thermal radiator tube and an array of thermophotovoltaic cells disposed on the exterior surface of the cooling tube. A shell having a first end and a second end surrounds the thermal radiator tube. Inner and outer tubesheets, each having an aperture corresponding to each cooling tube, are located at each end of the shell. The thermal radiator tube extends within the shell between the inner tubesheets. The cooling tube extends within the shell through the corresponding apertures of the two inner tubesheets to the corresponding apertures of the two outer tubesheets. A plurality of the thermal radiator tubes can be arranged in a staggered or an in-line configuration within the shell. 8 figs.

Tube-in-tube thermophotovoltaic generator

DOEpatents

Ashcroft, John; Campbell, Brian; DePoy, David

1998-01-01

A thermophotovoltaic device includes at least one thermal radiator tube, a cooling tube concentrically disposed within each thermal radiator tube and an array of thermophotovoltaic cells disposed on the exterior surface of the cooling tube. A shell having a first end and a second end surrounds the thermal radiator tube. Inner and outer tubesheets, each having an aperture corresponding to each cooling tube, are located at each end of the shell. The thermal radiator tube extends within the shell between the inner tubesheets. The cooling tube extends within the shell through the corresponding apertures of the two inner tubesheets to the corresponding apertures of the two outer tubesheets. A plurality of the thermal radiator tubes can be arranged in a staggered or an in-line configuration within the shell.

Metal nanoparticle film–based room temperature Coulomb transistor

PubMed Central

Willing, Svenja; Lehmann, Hauke; Volkmann, Mirjam; Klinke, Christian

2017-01-01

Single-electron transistors would represent an approach to developing less power–consuming microelectronic devices if room temperature operation and industry-compatible fabrication were possible. We present a concept based on stripes of small, self-assembled, colloidal, metal nanoparticles on a back-gate device architecture, which leads to well-defined and well-controllable transistor characteristics. This Coulomb transistor has three main advantages. By using the scalable Langmuir-Blodgett method, we combine high-quality chemically synthesized metal nanoparticles with standard lithography techniques. The resulting transistors show on/off ratios above 90%, reliable and sinusoidal Coulomb oscillations, and room temperature operation. Furthermore, this concept allows for versatile tuning of the device properties such as Coulomb energy gap and threshold voltage, as well as period, position, and strength of the oscillations. PMID:28740864

Development and fabrication of improved power transistor switches

NASA Technical Reports Server (NTRS)

Hower, P. L.; Chu, C. K.

1979-01-01

A new class of high-voltage power transistors was achieved by adapting present interdigitated thyristor processing techniques to the fabrication of npn Si transistors. Present devices are 2.3 cm in diameter and have V sub CEO (sus) in the range of 400 to 600V. V sub CEO (sus) = 450V devices were made with an (h sub FE)(I sub C) product of 900A at V sub CE = 2.5V. The electrical performance obtained was consistent with the predictions of an optimum design theory specifically developed for power switching transistors. The device design, wafer processing, and assembly techniques are described. Experimental measurements of the dc characteristics, forward SOA, and switching times are included. A new method of characterizing the switching performance of power transistors is proposed.

Large scale electromechanical transistor with application in mass sensing

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jin, Leisheng; Li, Lijie, E-mail: L.Li@swansea.ac.uk

Nanomechanical transistor (NMT) has evolved from the single electron transistor, a device that operates by shuttling electrons with a self-excited central conductor. The unfavoured aspects of the NMT are the complexity of the fabrication process and its signal processing unit, which could potentially be overcome by designing much larger devices. This paper reports a new design of large scale electromechanical transistor (LSEMT), still taking advantage of the principle of shuttling electrons. However, because of the large size, nonlinear electrostatic forces induced by the transistor itself are not sufficient to drive the mechanical member into vibration—an external force has to bemore » used. In this paper, a LSEMT device is modelled, and its new application in mass sensing is postulated using two coupled mechanical cantilevers, with one of them being embedded in the transistor. The sensor is capable of detecting added mass using the eigenstate shifts method by reading the change of electrical current from the transistor, which has much higher sensitivity than conventional eigenfrequency shift approach used in classical cantilever based mass sensors. Numerical simulations are conducted to investigate the performance of the mass sensor.« less

Ideal Channel Field Effect Transistors

DTIC Science & Technology

2010-03-01

well as on /?-GaAs/w-GaAs homojunctions grown by molecular beam epitaxy (MBE). The diode I-Vs at reverse bias are plotted below. The measured breakdown...transistors and composite channel InAlAs/InGaAs/lnP/InAlAs high electron mobility transistors ( HEMTs ), which have taken the full advantage of the matched...result in a large number of dislocations in GaAs films epitaxially grown on wurtzite GaN. In this work, we have successfully integrated GaAs with GaN

Organic transistors manufactured using inkjet technology with subfemtoliter accuracy

PubMed Central

Sekitani, Tsuyoshi; Noguchi, Yoshiaki; Zschieschang, Ute; Klauk, Hagen; Someya, Takao

2008-01-01

A major obstacle to the development of organic transistors for large-area sensor, display, and circuit applications is the fundamental compromise between manufacturing efficiency, transistor performance, and power consumption. In the past, improving the manufacturing efficiency through the use of printing techniques has inevitably resulted in significantly lower performance and increased power consumption, while attempts to improve performance or reduce power have led to higher process temperatures and increased manufacturing cost. Here, we lift this fundamental limitation by demonstrating subfemtoliter inkjet printing to define metal contacts with single-micrometer resolution on the surface of high-mobility organic semiconductors to create high-performance p-channel and n-channel transistors and low-power complementary circuits. The transistors employ an ultrathin low-temperature gate dielectric based on a self-assembled monolayer that allows transistors and circuits on rigid and flexible substrates to operate with very low voltages. PMID:18362348

Transistors using crystalline silicon devices on glass

DOEpatents

McCarthy, Anthony M.

1995-01-01

A method for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed.

Field-effect transistors (2nd revised and enlarged edition)

NASA Astrophysics Data System (ADS)

Bocharov, L. N.

The design, principle of operation, and principal technical characteristics of field-effect transistors produced in the USSR are described. Problems related to the use of field-effect transistors in various radioelectronic devices are examined, and tables of parameters and mean statistical characteristics are presented for the main types of field-effect transistors. Methods for calculating various circuit components are discussed and illustrated by numerical examples.

The Classical Vacuum.

ERIC Educational Resources Information Center

Boyer, Timothy H.

1985-01-01

The classical vacuum of physics is not empty, but contains a distinctive pattern of electromagnetic fields. Discovery of the vacuum, thermal spectrum, classical electron theory, zero-point spectrum, and effects of acceleration are discussed. Connection between thermal radiation and the classical vacuum reveals unexpected unity in the laws of…

Electroweak vacuum instability and renormalized Higgs field vacuum fluctuations in the inflationary universe

NASA Astrophysics Data System (ADS)

Kohri, Kazunori; Matsui, Hiroki

2017-08-01

In this work, we investigated the electroweak vacuum instability during or after inflation. In the inflationary Universe, i.e., de Sitter space, the vacuum field fluctuations < δ phi 2 > enlarge in proportion to the Hubble scale H2. Therefore, the large inflationary vacuum fluctuations of the Higgs field < δ phi 2 > are potentially catastrophic to trigger the vacuum transition to the negative-energy Planck-scale vacuum state and cause an immediate collapse of the Universe. However, the vacuum field fluctuations < δ phi 2 >, i.e., the vacuum expectation values have an ultraviolet divergence, and therefore a renormalization is necessary to estimate the physical effects of the vacuum transition. Thus, in this paper, we revisit the electroweak vacuum instability from the perspective of quantum field theory (QFT) in curved space-time, and discuss the dynamical behavior of the homogeneous Higgs field phi determined by the effective potential V eff( phi ) in curved space-time and the renormalized vacuum fluctuations < δ phi 2 >ren via adiabatic regularization and point-splitting regularization. We simply suppose that the Higgs field only couples the gravity via the non-minimal Higgs-gravity coupling ξ(μ). In this scenario, the electroweak vacuum stability is inevitably threatened by the dynamical behavior of the homogeneous Higgs field phi, or the formations of AdS domains or bubbles unless the Hubble scale is small enough H< ΛI .

Influence of water vapor on the electronic property of MoS2 field effect transistors.

PubMed

Shu, Jiapei; Wu, Gongtao; Gao, Song; Liu, Bo; Wei, Xianlong; Chen, Qing

2017-05-19

The influence of water vapor on the electronic property of MoS 2 field effect transistors (FETs) is studied through controlled experiments. We fabricate supported and suspended FETs on the same piece of MoS 2 to figure out the role of SiO 2 substrate on the water sensing property of MoS 2 . The two kinds of devices show similar response to water vapor and to different treatments, such as pumping in the vacuum, annealing at 500 K and current annealing, indicating the substrate does not play an important role in the MoS 2 water sensor. Water adsorption is found to decrease the carrier mobility probably through introducing a scattering center on the surface of MoS 2 . The threshold voltage and subthreshold swing of the FETs do not change obviously after introducing water vapor, indicating there is no obvious doping and trap introducing effects. Long time pumping in a high vacuum and 500 K annealing show negligible effects on removing the water adsorption on the devices. Current annealing at high source-drain bias is found to be able to remove the water adsorption and set the FETs to their initial states. The mechanism is proposed to be through the hot carriers at high bias.

Three dimensional-stacked complementary thin-film transistors using n-type Al:ZnO and p-type NiO thin-film transistors.

PubMed

Lee, Ching-Ting; Chen, Chia-Chi; Lee, Hsin-Ying

2018-03-05

The three dimensional inverters were fabricated using novel complementary structure of stacked bottom n-type aluminum-doped zinc oxide (Al:ZnO) thin-film transistor and top p-type nickel oxide (NiO) thin-film transistor. When the inverter operated at the direct voltage (V DD ) of 10 V and the input voltage from 0 V to 10 V, the obtained high performances included the output swing of 9.9 V, the high noise margin of 2.7 V, and the low noise margin of 2.2 V. Furthermore, the high performances of unskenwed inverter were demonstrated by using the novel complementary structure of the stacked n-type Al:ZnO thin-film transistor and p-type nickel oxide (NiO) thin-film transistor.

A PWM transistor inverter for an ac electric vehicle drive

NASA Technical Reports Server (NTRS)

Slicker, J. M.

1981-01-01

A prototype system consisting of closely integrated motor, inverter, and transaxle has been built in order to demonstrate the feasibility of a three-phase ac transistorized inverter for electric vehicle applications. The microprocessor-controlled inverter employs monolithic power transistors to drive an oil-cooled, three-phase induction traction motor at a peak output power of 30 kW from a 144 V battery pack. Transistor safe switching requirements are discussed, and a circuit is presented for recovering trapped snubber inductor energy at transistor turn-off.

SHINE Vacuum Pump Test Verification

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morgan, Gregg A; Peters, Brent

2013-09-30

Normetex pumps used world-wide for tritium service are no longer available. DOE and other researchers worldwide have spent significant funds characterizing this pump. Identification of alternate pumps is required for performance and compatibility with tritium gas. Many of the pumps that could be used to meet the functional performance requirements (e.g. pressure and flow conditions) of the Normetex pump have features that include the use of polymers or oils and greases that are not directly compatible with tritium service. This study assembles a test system to determine the flow characteristics for candidate alternate pumps. These tests are critical to themore » movement of tritium through the SHINE Tritium Purification System (TPS). The purpose of the pump testing is two-fold: (1) obtain baseline vacuum pump characteristics for an alternate (i.e. ''Normetex replacement'') pump intended for use in tritium service; and (2) verify that low pressure hydrogen gas can be transported over distances up to 300 feet by the candidate pumps. Flow rates and nominal system pressures have been identified for the SHINE Mo-99 production process Tritium Purification System (TPS). To minimize the line sizes for the transfer of low pressure tritium from the Neutron Driver Accelerator System (NDAS) to the primary processing systems in the TPS, a ''booster'' pump has been located near the accelerator in the design. A series of pump tests were performed at various configurations using hydrogen gas (no tritium) to ensure that this concept is practical and maintains adequate flow rates and required pressures. This report summarizes the results of the tests that have been performed using various pump configurations. The current design of the Tritium Purification System requires the ''booster'' pump to discharge to or to be backed by another vacuum pump. Since Normetex pumps are no longer manufactured, a commercially available Edwards scroll pump will be used to back the booster pump. In

Thermo-piezo-electro-mechanical simulation of AlGaN (aluminum gallium nitride) / GaN (gallium nitride) High Electron Mobility Transistors

NASA Astrophysics Data System (ADS)

Stevens, Lorin E.

Due to the current public demand of faster, more powerful, and more reliable electronic devices, research is prolific these days in the area of high electron mobility transistor (HEMT) devices. This is because of their usefulness in RF (radio frequency) and microwave power amplifier applications including microwave vacuum tubes, cellular and personal communications services, and widespread broadband access. Although electrical transistor research has been ongoing since its inception in 1947, the transistor itself continues to evolve and improve much in part because of the many driven researchers and scientists throughout the world who are pushing the limits of what modern electronic devices can do. The purpose of the research outlined in this paper was to better understand the mechanical stresses and strains that are present in a hybrid AlGaN (Aluminum Gallium Nitride) / GaN (Gallium Nitride) HEMT, while under electrically-active conditions. One of the main issues currently being researched in these devices is their reliability, or their consistent ability to function properly, when subjected to high-power conditions. The researchers of this mechanical study have performed a static (i.e. frequency-independent) reliability analysis using powerful multiphysics computer modeling/simulation to get a better idea of what can cause failure in these devices. Because HEMT transistors are so small (micro/nano-sized), obtaining experimental measurements of stresses and strains during the active operation of these devices is extremely challenging. Physical mechanisms that cause stress/strain in these structures include thermo-structural phenomena due to mismatch in both coefficient of thermal expansion (CTE) and mechanical stiffness between different materials, as well as stress/strain caused by "piezoelectric" effects (i.e. mechanical deformation caused by an electric field, and conversely voltage induced by mechanical stress) in the AlGaN and GaN device portions (both

Switching Transistor

NASA Technical Reports Server (NTRS)

1981-01-01

Westinghouse Electric Corporation's D60T transistors are used primarily as switching devices for controlling high power in electrical circuits. It enables reduction in the number and size of circuit components and promotes more efficient use of energy. Wide range of application from a popcorn popper to a radio frequency generator for solar cell production.

Germanium detector vacuum encapsulation

NASA Technical Reports Server (NTRS)

Madden, N. W.; Malone, D. F.; Pehl, R. H.; Cork, C. P.; Luke, P. N.; Landis, D. A.; Pollard, M. J.

1991-01-01

This paper describes an encapsulation technology that should significantly improve the viability of germanium gamma-ray detectors for a number of important applications. A specialized vacuum chamber has been constructed in which the detector and the encapsulating module are processed in high vacuum. Very high vacuum conductance is achieved within the valveless encapsulating module. The detector module is then sealed without breaking the chamber vacuum. The details of the vacuum chamber, valveless module, processing, and sealing method are presented.

Programmable, automated transistor test system

NASA Technical Reports Server (NTRS)

Truong, L. V.; Sundburg, G. R.

1986-01-01

A programmable, automated transistor test system was built to supply experimental data on new and advanced power semiconductors. The data will be used for analytical models and by engineers in designing space and aircraft electric power systems. A pulsed power technique was used at low duty cycles in a nondestructive test to examine the dynamic switching characteristic curves of power transistors in the 500 to 1000 V, 10 to 100 A range. Data collection, manipulation, storage, and output are operator interactive but are guided and controlled by the system software.

I-V Characteristics of a Ferroelectric Field Effect Transistor

NASA Technical Reports Server (NTRS)

MacLeod, Todd C.; Ho, Fat Duen

1999-01-01

There are many possible uses for ferroelectric field effect transistors.To understand their application, a fundamental knowledge of their basic characteristics must first be found. In this research, the current and voltage characteristics of a field effect transistor are described. The effective gate capacitance and charge are derived from experimental data on an actual FFET. The general equation for a MOSFET is used to derive the internal characteristics of the transistor: This equation is modified slightly to describe the FFET characteristics. Experimental data derived from a Radiant Technologies FFET is used to calculate the internal transistor characteristics using fundamental MOSFET equations. The drain current was measured under several different gate and drain voltages and with different initial polarizations on the ferroelectric material in the transistor. Two different polarization conditions were used. One with the gate ferroelectric material polarized with a +9.0 volt write pulse and one with a -9.0 volt pulse.

Performance of an adjustable, threaded inertance tube

NASA Astrophysics Data System (ADS)

Zhou, W. J.; Pfotenhauer, J. M.; Nellis, G. F.; Liu, S. Y.

2015-12-01

The performance of the Stirling type pulse tube cryocooler depends strongly on the design of the inertance tube. The phase angle produced by the inertance tube is very sensitive to its diameter and length. Recent developments are reported here regarding an adjustable inertance device that can be adjusted in real time. The inertance passage is formed by the root of a concentric cylindrical threaded device. The depth of the threads installed on the outer screw varies. In this device, the outer screw can be rotated four and half turns. At the zero turn position the length of the passage is 1.74 m and the hydraulic diameter is 7 mm. By rotating the outer screw, the inner threaded rod engages with additional, larger depth threads. Therefore, at its upper limit of rotation, the inertance passage includes both the original 1.74 m length with 7mm hydraulic diameter plus an additional 1.86 m length with a 10 mm hydraulic diameter. A phase shift change of 24° has been experimentally measured by changing the position of outer screw while operating the device at a frequency of 60 Hz. This phase angle shift is less than the theoretically predicted value due to the presence of a relatively large leak through the thread clearance. Therefore, the distributed component model of the inertance tube was modified to account for the leak path causing the data to agree with the model. Further, the application of vacuum grease to the threads causes the performance of the device to improve substantially.

14 CFR 145.59 - Ratings.

Code of Federal Regulations, 2011 CFR

2011-01-01

... tubes, transistors, or similar devices, including capacitance type quantity gauges, system amplifiers... depends on the use of an electron tube transistor, or similar device, including supercharger, temperature...

14 CFR 145.59 - Ratings.

Code of Federal Regulations, 2012 CFR

2012-01-01

... tubes, transistors, or similar devices, including capacitance type quantity gauges, system amplifiers... depends on the use of an electron tube transistor, or similar device, including supercharger, temperature...

14 CFR 145.59 - Ratings.

Code of Federal Regulations, 2013 CFR

2013-01-01

... tubes, transistors, or similar devices, including capacitance type quantity gauges, system amplifiers... depends on the use of an electron tube transistor, or similar device, including supercharger, temperature...

14 CFR 145.59 - Ratings.

Code of Federal Regulations, 2014 CFR

2014-01-01

... tubes, transistors, or similar devices, including capacitance type quantity gauges, system amplifiers... depends on the use of an electron tube transistor, or similar device, including supercharger, temperature...

Theory and Device Modeling for Nano-Structured Transistor Channels

DTIC Science & Technology

2011-06-01

zinc oxide ( ZnO ) thin film transistors ( TFTs ) that contain nanocrystalline grains on the order of ~20nm. The authors of ref. 1 present results...problem in order to determine the threshold voltage. 15. SUBJECT TERMS nano-structured transistor , mesoscopic, zinc oxide , ZnO , field-effect...and R. Neidhard, “Microwave ZnO Thin - Film Transistors ”, IEEE Electron Dev. Lett. 29, 1024 (2008); doi: 10.1109/LED.2008.2001635.

AlGaSb Buffer Layers for Sb-Based Transistors

DTIC Science & Technology

2010-01-01

transistor ( HEMT ), molecular beam epitaxy (MBE), field-effect transistor (FET), buffer layer INTRODUCTION High-electron-mobility transistors ( HEMTs ) with InAs...monolayers/s. The use of thinner buffer layers reduces molecular beam epitaxial growth time and source consumption. The buffer layers also exhibit...source. In addition, some of the flux from an Sb cell in a molecular beam epitaxy (MBE) system will deposit near the mouth of the cell, eventually

Development of High Interruption Capability Vacuum Circuit Breaker -Technology of Vacuum Arc Control-

NASA Astrophysics Data System (ADS)

Niwa, Yoshimitsu; Kaneko, Eiji

Vacuum circuit breakers (VCB) have been widely used for power distribution systems. Vacuum Interrupters, which are the current interruption unit, have been increased its interruption capability with the development of vacuum arc control technology by magnetic field. There are three major type electrodes: disk shaped electrodes, radial magnetic field electrodes, axial magnetic field (AMF) electrodes. In the disk shaped electrode, the vacuum arc between the electrodes is not controlled. In the AMF electrode, the vacuum arc is diffused and stabilized by an axial magnetic field, which is parallel to the arc current. In the last type of electrodes, the vacuum arc column is rotated by magnetic force generated by the current flowing in the electrodes. The interruption current and the voltage of one break VCB is increased to 100 kA, 144 kV respectively. This paper describes basic configurations and functions of VCB, vacuum arc control technology in vacuum interrupters, recent researches and applications of VCB.

Electroweak vacuum instability and renormalized Higgs field vacuum fluctuations in the inflationary universe

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kohri, Kazunori; Matsui, Hiroki, E-mail: kohri@post.kek.jp, E-mail: matshiro@post.kek.jp

In this work, we investigated the electroweak vacuum instability during or after inflation. In the inflationary Universe, i.e., de Sitter space, the vacuum field fluctuations < δ φ {sup 2} > enlarge in proportion to the Hubble scale H {sup 2}. Therefore, the large inflationary vacuum fluctuations of the Higgs field < δ φ {sup 2} > are potentially catastrophic to trigger the vacuum transition to the negative-energy Planck-scale vacuum state and cause an immediate collapse of the Universe. However, the vacuum field fluctuations < δ φ {sup 2} >, i.e., the vacuum expectation values have an ultraviolet divergence, andmore » therefore a renormalization is necessary to estimate the physical effects of the vacuum transition. Thus, in this paper, we revisit the electroweak vacuum instability from the perspective of quantum field theory (QFT) in curved space-time, and discuss the dynamical behavior of the homogeneous Higgs field φ determined by the effective potential V {sub eff}( φ ) in curved space-time and the renormalized vacuum fluctuations < δ φ {sup 2} >{sub ren} via adiabatic regularization and point-splitting regularization. We simply suppose that the Higgs field only couples the gravity via the non-minimal Higgs-gravity coupling ξ(μ). In this scenario, the electroweak vacuum stability is inevitably threatened by the dynamical behavior of the homogeneous Higgs field φ, or the formations of AdS domains or bubbles unless the Hubble scale is small enough H < Λ {sub I} .« less

Development of a direct patterning method for functional oxide thin films using ultraviolet irradiation and hybrid-cluster gels and its application to thin-film transistor fabrication

NASA Astrophysics Data System (ADS)

Yoshimoto, Yuuki; Li, Jinwang; Shimoda, Tatsuya

2018-04-01

A gel state exists in the solution-solid conversion process. We found that solidification can be promoted by irradiating the gel with ultraviolet (UV) light. In this study, a patterning method without using a vacuum system or employing photoresist materials has been proposed wherein solidification was applied to a gel by UV irradiation. Indium oxide gel, indium gallium oxide gel, lanthanum zirconium oxide gel, and lanthanum ruthenium oxide gels were successfully patterned by using our technique. Moreover, an oxide thin-film transistor was fabricated by our novel patterning method and was successfully operated.

Mixed protonic and electronic conductors hybrid oxide synaptic transistors

NASA Astrophysics Data System (ADS)

Fu, Yang Ming; Zhu, Li Qiang; Wen, Juan; Xiao, Hui; Liu, Rui

2017-05-01

Mixed ionic and electronic conductor hybrid devices have attracted widespread attention in the field of brain-inspired neuromorphic systems. Here, mixed protonic and electronic conductor (MPEC) hybrid indium-tungsten-oxide (IWO) synaptic transistors gated by nanogranular phosphorosilicate glass (PSG) based electrolytes were obtained. Unique field-configurable proton self-modulation behaviors were observed on the MPEC hybrid transistor with extremely strong interfacial electric-double-layer effects. Temporally coupled synaptic plasticities were demonstrated on the MPEC hybrid IWO synaptic transistor, including depolarization/hyperpolarization, synaptic facilitation and depression, facilitation-stead/depression-stead behaviors, spiking rate dependent plasticity, and high-pass/low-pass synaptic filtering behaviors. MPEC hybrid synaptic transistors may find potential applications in neuron-inspired platforms.

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

NASA Astrophysics Data System (ADS)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron; Dolgashev, Valery A.; Haase, Andrew; Fazio, Michael V.; Borchard, Philipp

2017-06-01

We report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at the 5th harmonic.

Scalable fabrication of self-aligned graphene transistors and circuits on glass.

PubMed

Liao, Lei; Bai, Jingwei; Cheng, Rui; Zhou, Hailong; Liu, Lixin; Liu, Yuan; Huang, Yu; Duan, Xiangfeng

2012-06-13

Graphene transistors are of considerable interest for radio frequency (rf) applications. High-frequency graphene transistors with the intrinsic cutoff frequency up to 300 GHz have been demonstrated. However, the graphene transistors reported to date only exhibit a limited extrinsic cutoff frequency up to about 10 GHz, and functional graphene circuits demonstrated so far can merely operate in the tens of megahertz regime, far from the potential the graphene transistors could offer. Here we report a scalable approach to fabricate self-aligned graphene transistors with the extrinsic cutoff frequency exceeding 50 GHz and graphene circuits that can operate in the 1-10 GHz regime. The devices are fabricated on a glass substrate through a self-aligned process by using chemical vapor deposition (CVD) grown graphene and a dielectrophoretic assembled nanowire gate array. The self-aligned process allows the achievement of unprecedented performance in CVD graphene transistors with a highest transconductance of 0.36 mS/μm. The use of an insulating substrate minimizes the parasitic capacitance and has therefore enabled graphene transistors with a record-high extrinsic cutoff frequency (> 50 GHz) achieved to date. The excellent extrinsic cutoff frequency readily allows configuring the graphene transistors into frequency doubling or mixing circuits functioning in the 1-10 GHz regime, a significant advancement over previous reports (∼20 MHz). The studies open a pathway to scalable fabrication of high-speed graphene transistors and functional circuits and represent a significant step forward to graphene based radio frequency devices.

Transistors using crystalline silicon devices on glass

DOEpatents

McCarthy, A.M.

1995-05-09

A method is disclosed for fabricating transistors using single-crystal silicon devices on glass. This method overcomes the potential damage that may be caused to the device during high voltage bonding and employs a metal layer which may be incorporated as part of the transistor. This is accomplished such that when the bonding of the silicon wafer or substrate to the glass substrate is performed, the voltage and current pass through areas where transistors will not be fabricated. After removal of the silicon substrate, further metal may be deposited to form electrical contact or add functionality to the devices. By this method both single and gate-all-around devices may be formed. 13 figs.

Controlled n-Type Doping of Carbon Nanotube Transistors by an Organorhodium Dimer.

PubMed

Geier, Michael L; Moudgil, Karttikay; Barlow, Stephen; Marder, Seth R; Hersam, Mark C

2016-07-13

Single-walled carbon nanotube (SWCNT) transistors are among the most developed nanoelectronic devices for high-performance computing applications. While p-type SWCNT transistors are easily achieved through adventitious adsorption of atmospheric oxygen, n-type SWCNT transistors require extrinsic doping schemes. Existing n-type doping strategies for SWCNT transistors suffer from one or more issues including environmental instability, limited carrier concentration modulation, undesirable threshold voltage control, and/or poor morphology. In particular, commonly employed benzyl viologen n-type doping layers possess large thicknesses, which preclude top-gate transistor designs that underlie high-density integrated circuit layouts. To overcome these limitations, we report here the controlled n-type doping of SWCNT thin-film transistors with a solution-processed pentamethylrhodocene dimer. The charge transport properties of organorhodium-treated SWCNT thin films show consistent n-type behavior when characterized in both Hall effect and thin-film transistor geometries. Due to the molecular-scale thickness of the organorhodium adlayer, large-area arrays of top-gated, n-type SWCNT transistors are fabricated with high yield. This work will thus facilitate ongoing efforts to realize high-density SWCNT integrated circuits.

Influence of centrifugation conditions on the results of 77 routine clinical chemistry analytes using standard vacuum blood collection tubes and the new BD-Barricor tubes

PubMed Central

Cadamuro, Janne; Mrazek, Cornelia; Leichtle, Alexander B.; Kipman, Ulrike; Felder, Thomas K.; Wiedemann, Helmut; Oberkofler, Hannes; Fiedler, Georg M.; Haschke-Becher, Elisabeth

2017-01-01

Introduction Although centrifugation is performed in almost every blood sample, recommendations on duration and g-force are heterogeneous and mostly based on expert opinions. In order to unify this step in a fully automated laboratory, we aimed to evaluate different centrifugation settings and their influence on the results of routine clinical chemistry analytes. Materials and methods We collected blood from 41 healthy volunteers into BD Vacutainer PST II-heparin-gel- (LiHepGel), BD Vacutainer SST II-serum-, and BD Vacutainer Barricor heparin-tubes with a mechanical separator (LiHepBar). Tubes were centrifuged at 2000xg for 10 minutes and 3000xg for 7 and 5 minutes, respectively. Subsequently 60 and 21 clinical chemistry analytes were measured in plasma and serum samples, respectively, using a Roche COBAS instrument. Results High sensitive Troponin T, pregnancy-associated plasma protein A, ß human chorionic gonadotropin and rheumatoid factor had to be excluded from statistical evaluation as many of the respective results were below the measuring range. Except of free haemoglobin (fHb) measurements, no analyte result was altered by the use of shorter centrifugation times at higher g-forces. Comparing LiHepBar to LiHepGel tubes at different centrifugation setting, we found higher lactate-dehydrogenase (LD) (P = 0.003 to < 0.001) and lower bicarbonate values (P = 0.049 to 0.008) in the latter. Conclusions Serum and heparin samples may be centrifuged at higher speed (3000xg) for a shorter amount of time (5 minutes) without alteration of the analytes tested in this study. When using LiHepBar tubes for blood collection, a separate LD reference value might be needed. PMID:29187797

Influence of centrifugation conditions on the results of 77 routine clinical chemistry analytes using standard vacuum blood collection tubes and the new BD-Barricor tubes.

PubMed

Cadamuro, Janne; Mrazek, Cornelia; Leichtle, Alexander B; Kipman, Ulrike; Felder, Thomas K; Wiedemann, Helmut; Oberkofler, Hannes; Fiedler, Georg M; Haschke-Becher, Elisabeth

2018-02-15

Although centrifugation is performed in almost every blood sample, recommendations on duration and g-force are heterogeneous and mostly based on expert opinions. In order to unify this step in a fully automated laboratory, we aimed to evaluate different centrifugation settings and their influence on the results of routine clinical chemistry analytes. We collected blood from 41 healthy volunteers into BD Vacutainer PST II-heparin-gel- (LiHepGel), BD Vacutainer SST II-serum-, and BD Vacutainer Barricor heparin-tubes with a mechanical separator (LiHepBar). Tubes were centrifuged at 2000xg for 10 minutes and 3000xg for 7 and 5 minutes, respectively. Subsequently 60 and 21 clinical chemistry analytes were measured in plasma and serum samples, respectively, using a Roche COBAS instrument. High sensitive Troponin T, pregnancy-associated plasma protein A, ß human chorionic gonadotropin and rheumatoid factor had to be excluded from statistical evaluation as many of the respective results were below the measuring range. Except of free haemoglobin (fHb) measurements, no analyte result was altered by the use of shorter centrifugation times at higher g-forces. Comparing LiHepBar to LiHepGel tubes at different centrifugation setting, we found higher lactate-dehydrogenase (LD) (P = 0.003 to < 0.001) and lower bicarbonate values (P = 0.049 to 0.008) in the latter. Serum and heparin samples may be centrifuged at higher speed (3000xg) for a shorter amount of time (5 minutes) without alteration of the analytes tested in this study. When using LiHepBar tubes for blood collection, a separate LD reference value might be needed.

Organic transistors making use of room temperature ionic liquids as gating medium

NASA Astrophysics Data System (ADS)

Hoyos, Jonathan Javier Sayago

The ability to couple ionic and electronic transport in organic transistors, based on pi conjugated organic materials for the transistor channel, can be particularly interesting to achieve low voltage transistor operation, i.e. below 1 V. The operation voltage in typical organic transistors based on conventional dielectrics (200 nm thick SiO2) is commonly higher than 10 V. Electrolyte-gated (EG) transistors, i.e. employing an electrolyte as the gating medium, permit current modulations of several orders of magnitude at relatively low gate voltages thanks to the exceptionally high capacitance at the electrolyte/transistor channel interface, in turn due to the low thickness (ca. 3 nm) of the electrical double layers forming at the electrolyte/semiconductor interface. Electrolytes based on room temperature ionic liquids (RTILs) are promising in EG transistor applications for their high electrochemical stability and good ionic conductivity. The main motivation behind this work is to achieve low voltage operation in organic transistors by making use of RTILs as gating medium. First we demonstrate the importance of the gate electrode material in the EG transistor performance. The use of high surface area carbon gate electrodes limits undesirable electrochemical processes and renders unnecessary the presence of a reference electrode to monitor the channel potential. This was demonstrated using activated carbon as gate electrode, the electronic conducting polymer MEH-PPV, poly[2-methoxy-5-(2'-ethylhexyloxy)-1,4-phenylene vinylene] channel material, and the ionic liquid [EMIM][TFSI] (1-ethyl-3-methylimidazolium bis(trifluoromethylsulfonyl)imide), as gating medium. Using high surface area gate electrodes resulted in sub-1 V operation and charge carrier mobilities of (1.0 +/- 0.5) x 10-2 cm2V -1s-1. A challenge in the field of EG transistors is to decrease their response time, a consequence of the slow ion redistribution in the transistor channel upon application of electric

Organic electrochemical transistors

NASA Astrophysics Data System (ADS)

Rivnay, Jonathan; Inal, Sahika; Salleo, Alberto; Owens, Róisín M.; Berggren, Magnus; Malliaras, George G.

2018-02-01

Organic electrochemical transistors (OECTs) make effective use of ion injection from an electrolyte to modulate the bulk conductivity of an organic semiconductor channel. The coupling between ionic and electronic charges within the entire volume of the channel endows OECTs with high transconductance compared with that of field-effect transistors, but also limits their response time. The synthetic tunability, facile deposition and biocompatibility of organic materials make OECTs particularly suitable for applications in biological interfacing, printed logic circuitry and neuromorphic devices. In this Review, we discuss the physics and the mechanism of operation of OECTs, focusing on their identifying characteristics. We highlight organic materials that are currently being used in OECTs and survey the history of OECT technology. In addition, form factors, fabrication technologies and applications such as bioelectronics, circuits and memory devices are examined. Finally, we take a critical look at the future of OECT research and development.

Magnetophoretic transistors in a tri-axial magnetic field.

PubMed

Abedini-Nassab, Roozbeh; Joh, Daniel Y; Albarghouthi, Faris; Chilkoti, Ashutosh; Murdoch, David M; Yellen, Benjamin B

2016-10-18

The ability to direct and sort individual biological and non-biological particles into spatially addressable locations is fundamentally important to the emerging field of single cell biology. Towards this goal, we demonstrate a new class of magnetophoretic transistors, which can switch single magnetically labeled cells and magnetic beads between different paths in a microfluidic chamber. Compared with prior work on magnetophoretic transistors driven by a two-dimensional in-plane rotating field, the addition of a vertical magnetic field bias provides significant advantages in preventing the formation of particle clumps and in better replicating the operating principles of circuits in general. However, the three-dimensional driving field requires a complete redesign of the magnetic track geometry and switching electrodes. We have solved this problem by developing several types of transistor geometries which can switch particles between two different tracks by either presenting a local energy barrier or by repelling magnetic objects away from a given track, hereby denoted as "barrier" and "repulsion" transistors, respectively. For both types of transistors, we observe complete switching of magnetic objects with currents of ∼40 mA, which is consistent over a range of particle sizes (8-15 μm). The switching efficiency was also tested at various magnetic field strengths (50-90 Oe) and driving frequencies (0.1-0.6 Hz); however, we again found that the device performance only weakly depended on these parameters. These findings support the use of these novel transistor geometries to form circuit architectures in which cells can be placed in defined locations and retrieved on demand.

Tunable organic transistors that use microfluidic source and drain electrodes

NASA Astrophysics Data System (ADS)

Maltezos, George; Nortrup, Robert; Jeon, Seokwoo; Zaumseil, Jana; Rogers, John A.

2003-09-01

This letter describes a type of transistor that uses conducting fluidic source and drain electrodes of mercury which flow on top of a thin film of the organic semiconductor pentacene. Pumping the mercury through suitably designed microchannels changes the width of the transistor channel and, therefore, the electrical characteristics of the device. Measurements on transistors with a range of channel lengths reveal low contact resistances between mercury and pentacene. Data collected before, during, and after pumping the mercury through the microchannels demonstrate reversible and systematic tuning of the devices. This unusual type of organic transistor has the potential to be useful in plastic microfluidic devices that require active elements for pumps, sensors, or other components. It also represents a noninvasive way to build transistor test structures that incorporate certain classes of chemically and mechanically fragile organic semiconductors.

X-band T/R switch with body-floating multi-gate PDSOI NMOS transistors

NASA Astrophysics Data System (ADS)

Park, Mingyo; Min, Byung-Wook

2018-03-01

This paper presents an X-band transmit/receive switch using multi-gate NMOS transistors in a silicon-on-insulator CMOS process. For low loss and high power handling capability, floating body multi-gate NMOS transistors are adopted instead of conventional stacked NMOS transistors, resulting in 53% reduction of transistor area. Comparing to the stacked NMOS transistors, the multi gate transistor shares the source and drain region between stacked transistors, resulting in reduced chip area and parasitics. The impedance between bodies of gates in multi-gate NMOS transistors is assumed to be very large during design and confirmed after measurement. The measured input 1 dB compression point is 34 dBm. The measured insertion losses of TX and RX modes are respectively 1.7 dB and 2.0 dB at 11 GHz, and the measured isolations of TX and RX modes are >27 dB and >20 dB in X-band, respectively. The chip size is 0.086 mm2 without pads, which is 25% smaller than the T/R switch with stacked transistors.

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE Office of Scientific and Technical Information (OSTI.GOV)

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

Experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum tube

DOE PAGES

Toufexis, Filippos; Tantawi, Sami G.; Jensen, Aaron; ...

2017-06-26

Here, we report the experimental demonstration of a 5th harmonic mm-wave frequency multiplying vacuum electronic device, which uses an over-moded spherical sector output cavity. In this device, a pencil electron beam is helically deflected in a transverse deflecting cavity before entering the output cavity. No magnetic field is required to focus or guide the beam. We built and tested a proof-of-principle device with an output frequency of 57.12 GHz. The measured peak power was 52.67 W at the 5th harmonic of the drive frequency. Power at the 4th, 6th, and 7th harmonics was 33.28 dB lower than that at themore » 5th harmonic.« less

A Klein-tunneling transistor with ballistic graphene

NASA Astrophysics Data System (ADS)

Wilmart, Quentin; Berrada, Salim; Torrin, David; Nguyen, V. Hung; Fève, Gwendal; Berroir, Jean-Marc; Dollfus, Philippe; Plaçais, Bernard

2014-06-01

Today, the availability of high mobility graphene up to room temperature makes ballistic transport in nanodevices achievable. In particular, p-n-p transistors in the ballistic regime give access to Klein tunneling physics and allow the realization of devices exploiting the optics-like behavior of Dirac Fermions (DFs) as in the Veselago lens or the Fabry-Pérot cavity. Here we propose a Klein tunneling transistor based on the geometrical optics of DFs. We consider the case of a prismatic active region delimited by a triangular gate, where total internal reflection may occur, which leads to the tunable suppression of transistor transmission. We calculate the transmission and the current by means of scattering theory and the finite bias properties using non-equilibrium Green's function (NEGF) simulation.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

PubMed

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

Tunneling modulation of a quantum-well transistor laser

NASA Astrophysics Data System (ADS)

Feng, M.; Qiu, J.; Wang, C. Y.; Holonyak, N.

2016-11-01

Different than the Bardeen and Brattain transistor (1947) with the current gain depending on the ratio of the base carrier spontaneous recombination lifetime to the emitter-collector transit time, the Feng and Holonyak transistor laser current gain depends upon the base electron-hole (e-h) stimulated recombination, the base dielectric relaxation transport, and the collector stimulated tunneling. For the n-p-n transistor laser tunneling operation, the electron-hole pairs are generated at the collector junction under the influence of intra-cavity photon-assisted tunneling, with electrons drifting to the collector and holes drifting to the base. The excess charge in the base lowers the emitter junction energy barrier, allowing emitter electron injection into the base and satisfying charge neutrality via base dielectric relaxation transport (˜femtoseconds). The excess electrons near the collector junction undergo stimulated recombination at the base quantum-well or transport to the collector, thus supporting tunneling current amplification and optical modulation of the transistor laser.

Development and fabrication of an augmented power transistor

NASA Technical Reports Server (NTRS)

Geisler, M. J.; Hill, F. E.; Ostop, J. A.

1983-01-01

The development of device design and processing techniques for the fabrication of an augmented power transistor capable of fast switching and high voltage power conversion is discussed. The major device goals sustaining voltages in the range of 800 to 1000 V at 80 A and 50 A, respectively, at a gain of 14. The transistor switching rise and fall times were both to have been less than 0.5 microseconds. The development of a passivating glass technique to shield the device high voltage junction from moisture and ionic contaminants is discussed as well as the development of an isolated package that separates the thermal and electrical interfaces. A new method was found to alloy the transistors to the molybdenum disc at a relatively low temperature. The measured electrical performance compares well with the predicted optimum design specified in the original proposed design. A 40 mm diameter transistor was fabricated with seven times the emitter area of the earlier 23 mm diameter device.

Enhanced Amplification and Fan-Out Operation in an All-Magnetic Transistor

PubMed Central

Barman, Saswati; Saha, Susmita; Mondal, Sucheta; Kumar, Dheeraj; Barman, Anjan

2016-01-01

Development of all-magnetic transistor with favorable properties is an important step towards a new paradigm of all-magnetic computation. Recently, we showed such possibility in a Magnetic Vortex Transistor (MVT). Here, we demonstrate enhanced amplification in MVT achieved by introducing geometrical asymmetry in a three vortex sequence. The resulting asymmetry in core to core distance in the three vortex sequence led to enhanced amplification of the MVT output. A cascade of antivortices travelling in different trajectories including a nearly elliptical trajectory through the dynamic stray field is found to be responsible for this amplification. This asymmetric vortex transistor is further used for a successful fan-out operation, which gives large and nearly equal gains in two output branches. This large amplification in magnetic vortex gyration in magnetic vortex transistor is proposed to be maintained for a network of vortex transistor. The above observations promote the magnetic vortex transistors to be used in complex circuits and logic operations. PMID:27624662

Measurement of insulation integrity of IUE camera tube facsimiles by partial discharges method and diffusion of gases through various silicone rubbers

NASA Technical Reports Server (NTRS)

Bever, R. S.

1977-01-01

Several dummy tubes imitating the IUE Camera System design were encapsulated with Solithane 2, Conathane EN-11, Green and Black Hysols and SMRD 432. Various flaws were purposefully placed in some of these. Partial discharge testing in vacuum under direct voltage conditions was carried once a week for 12 weeks, 15 kv dc being applied during normal working hours for 40 hours duration per week. None of the units showed much damage during this time judging by the P.D. energy histograms. A more complete mathematical presentation is given on diffusion and permeation than previously. Measurements of diffusion constants for various silicone rubbers are carried out by the Time-Lag method and compared to other determinations in the literature. Calculations of the time required for diffusion through a thick wall are demonstrated in the long time approximation and for dimensions pertaining to void and wall sizes of a delamination problem in the LANDSAT-C vidicon tubes. An actual delaminated LANDSAT-C tube and some facsimiles are immersed in vacuum for long periods and tested for catastrophic breakdown due to diffusion of gas, by application of high voltage.

Design of spherical electron gun for ultra high frequency, CW power inductive output tube

NASA Astrophysics Data System (ADS)

Kaushik, Meenu; Joshi, L. M.

2016-03-01

Inductive Output Tube (IOT) is an amplifier that usually operates in UHF range. It is an electron tube whose basic structure is similar to conventional vacuum devices. This device is widely used in broadcast applications but is now being explored for scientific applications also specifically, particle accelerators and fusion plasma heating purposes. The paper describes the design approach of a spherical gridded electron gun of a 500 MHz, 100 kW CW power IOT. The electron gun structure has been simulated and optimized for operating voltage and current of 40kV and 3.5 A respectively. The electromagnetic analysis of this spherical electron gun has been carried out in CST and TRAK codes.

Radiation hard vacuum switch

DOEpatents

Boettcher, Gordon E.

1990-01-01

A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

Radiation hard vacuum switch

DOEpatents

Boettcher, Gordon E.

1990-03-06

A vacuum switch with an isolated trigger probe which is not directly connected to the switching electrodes. The vacuum switch within the plasmatron is triggered by plasma expansion initiated by the trigger probe which travels through an opening to reach the vacuum switch elements. The plasma arc created is directed by the opening to the space between the anode and cathode of the vacuum switch to cause conduction.

A Flush Toilet Model for the Transistor

NASA Astrophysics Data System (ADS)

Organtini, Giovanni

2012-04-01

In introductory physics textbooks, diodes working principles are usually well described in a relatively simple manner. According to our experience, they are well understood by students. Even when no formal derivation of the physics laws governing the current flow through a diode is given, the use of this device as a check valve is easily accepted. This is not true for transistors. In most textbooks the behavior of a transistor is given without formal explanation. When the amplification is computed, for some reason, students have difficulties in identifying the basic physical mechanisms that give rise to such an effect. In this paper we give a simple and captivating illustration of the working principles of a transistor as an amplifier, tailored to high school students even with almost no background in electronics nor in modern physics. We assume that the target audience is familiar with the idea that a diode works as a check valve for currents. The lecture emphasis is on the illustration of physics principles governing the behavior of a transistor, rather than on a formal description of the processes leading to amplification.

PH-Sensitive WO(3)-Based Microelectrochemical Transistors.

DTIC Science & Technology

1986-09-22

electronics, microelectrochemistry, microelectrodes, surface L- modification, molecuale based transistors, polyaniline , poly-3-methylthiophene Chemical...polymer, as in the cases of polypyrrole,8 poly(N-methyl pyrrole), 8b polyaniline , 9 or poly(3-methylthiophene),1 0 the polymer- % .4_. connected...Polypyrrole, 8 polyaniline , 9 and poly(3-methylthiophene) I0 are similar in that they are conducting when oxidized, and transistors based on these materials

Thin Film Transistors On Plastic Substrates

DOEpatents

Carey, Paul G.; Smith, Patrick M.; Sigmon, Thomas W.; Aceves, Randy C.

2004-01-20

A process for formation of thin film transistors (TFTs) on plastic substrates replaces standard thin film transistor fabrication techniques, and uses sufficiently lower processing temperatures so that inexpensive plastic substrates may be used in place of standard glass, quartz, and silicon wafer-based substrates. The silicon based thin film transistor produced by the process includes a low temperature substrate incapable of withstanding sustained processing temperatures greater than about 250.degree. C., an insulating layer on the substrate, a layer of silicon on the insulating layer having sections of doped silicon, undoped silicon, and poly-silicon, a gate dielectric layer on the layer of silicon, a layer of gate metal on the dielectric layer, a layer of oxide on sections of the layer of silicon and the layer of gate metal, and metal contacts on sections of the layer of silicon and layer of gate metal defining source, gate, and drain contacts, and interconnects.

Micellar Electrolytes in Organic Electrochemical Transistors

NASA Astrophysics Data System (ADS)

Cicoira, Fabio; Giuseppe, Tarabella; Nanda, Gaurav; Iannotta, Salvatore; Santato, Clara

2012-02-01

Organic electrochemical transistors (OECTs) are promising for applications in sensing and bioelectronics. OECTs consist of a conducting polymer film (transistor channel) in contact with an electrolyte. A gate electrode immersed in the electrolyte controls the doping/dedoping level of the conducting polymer. OECTs can be operated in aqueous electrolytes, making possible the implementation of organic electronic materials at the interface with biology. The inherent signal amplification of OECTs has the potential to yield sensors with low detection limits and high sensitivity. In this talk we will present recent studies on OECTs using ionic surfactants (such as hexadecyl-trimethyl-ammonium bromide) as electrolytes. As the conducting polymer we used PEDOT:PSS, i.e. (Poly,3-4 ethylenedioxythiopene) doped with Poly(styrene sulphonate). Interestingly, ionic surfactant electrolytes result in large transistor current modulation, especially beyond the critical micellar concentration (CMC). Since micelles play a primary role in biological processes and drug-delivery systems, the use for micellar electrolytes opens new exciting opportunities for the use of OECTs in bioelectronics.

Flow distribution analysis on the cooling tube network of ITER thermal shield

DOE Office of Scientific and Technical Information (OSTI.GOV)

Nam, Kwanwoo; Chung, Wooho; Noh, Chang Hyun

2014-01-29

Thermal shield (TS) is to be installed between the vacuum vessel or the cryostat and the magnets in ITER tokamak to reduce the thermal radiation load to the magnets operating at 4.2K. The TS is cooled by pressurized helium gas at the inlet temperature of 80K. The cooling tube is welded on the TS panel surface and the composed flow network of the TS cooling tubes is complex. The flow rate in each panel should be matched to the thermal design value for effective radiation shielding. This paper presents one dimensional analysis on the flow distribution of cooling tube networkmore » for the ITER TS. The hydraulic cooling tube network is modeled by an electrical analogy. Only the cooling tube on the TS surface and its connecting pipe from the manifold are considered in the analysis model. Considering the frictional factor and the local loss in the cooling tube, the hydraulic resistance is expressed as a linear function with respect to mass flow rate. Sub-circuits in the TS are analyzed separately because each circuit is controlled by its own control valve independently. It is found that flow rates in some panels are insufficient compared with the design values. In order to improve the flow distribution, two kinds of design modifications are proposed. The first one is to connect the tubes of the adjacent panels. This will increase the resistance of the tube on the panel where the flow rate is excessive. The other design suggestion is that an orifice is installed at the exit of tube routing where the flow rate is to be reduced. The analysis for the design suggestions shows that the flow mal-distribution is improved significantly.« less

A gallium phosphide high-temperature bipolar junction transistor

NASA Technical Reports Server (NTRS)

Zipperian, T. E.; Dawson, L. R.; Chaffin, R. J.

1981-01-01

Preliminary results are reported on the development of a high temperature (350 C) gallium phosphide bipolar junction transistor (BJT) for geothermal and other energy applications. This four-layer p(+)n(-)pp(+) structure was formed by liquid phase epitaxy using a supercooling technique to insure uniform nucleation of the thin layers. Magnesium was used as the p-type dopant to avoid excessive out-diffusion into the lightly doped base. By appropriate choice of electrodes, the device may also be driven as an n-channel junction field-effect transistor. The initial design suffers from a series resistance problem which limits the transistor's usefulness at high temperatures.

High-Temperature Crystal-Growth Cartridge Tubes Made by VPS

NASA Technical Reports Server (NTRS)

Holmes, Richard; O'Dell, Scott; McKechnie, Timothy; Power, Christopher

2008-01-01

Cartridge tubes for use in a crystal growth furnace at temperatures as high as 1,600 deg. C have been fabricated by vacuum plasma spraying (VPS). These cartridges consist mainly of an alloy of 60 weight percent molybdenum with 40 weight percent rhenium, made from molybdenum powder coated with rhenium. This alloy was selected because of its high melting temperature (approximately equal.2,550 C) and because of its excellent ductility at room temperature. These cartridges are intended to supplant tungsten/nickel-alloy cartridges, which cannot be used at temperatures above approximately equal 1,300 C.

Vacuum fluctuations in an ancestor vacuum: A possible dark energy candidate

NASA Astrophysics Data System (ADS)

Aoki, Hajime; Iso, Satoshi; Lee, Da-Shin; Sekino, Yasuhiro; Yeh, Chen-Pin

2018-02-01

We consider an open universe created by bubble nucleation, and study possible effects of our "ancestor vacuum," a de Sitter space in which bubble nucleation occurred, on the present universe. We compute vacuum expectation values of the energy-momentum tensor for a minimally coupled scalar field, carefully taking into account the effect of the ancestor vacuum by the Euclidean prescription. We pay particular attention to the so-called supercurvature mode, a non-normalizable mode on a spatial slice of the open universe, which has been known to exist for sufficiently light fields. This mode decays in time most slowly, and may leave residual effects of the ancestor vacuum, potentially observable in the present universe. We point out that the vacuum energy of the quantum field can be regarded as dark energy if mass of the field is of order the present Hubble parameter or smaller. We obtain preliminary results for the dark energy equation of state w (z ) as a function of the redshift.

Transport Mechanisms in Organic Thin-Film Transistors

NASA Astrophysics Data System (ADS)

Fung, A. W. P.

1996-03-01

Recent success in fabricating field-effect transistors with polycrystalline α-sexithiophene (α-6T) has allowed us to study charge transport in this organic semiconductor. The appealing structural property that the oligomer chains are seated almost perpendicular to the substrate provides a model π-conjugated system which we find exhibits band transport at low temperatures. We observe a behavioral transition around 50K which is consistent with the metal-insulator transition in Holstein's small-polaron theory. The fact that we can observe intrinsic behavior means that the ambient-temperature mobility obtained in these transistors is optimal for α-6T. Agreement with the Holstein theory provides us with a prescription for rational design of materials for organic transistor applications. Work done in collaboration with L. Torsi, A. Dodabalapur, L. J. Rothberg and H. E. Katz.

Reprogrammable read only variable threshold transistor memory with isolated addressing buffer

DOEpatents

Lodi, Robert J.

1976-01-01

A monolithic integrated circuit, fully decoded memory comprises a rectangular array of variable threshold field effect transistors organized into a plurality of multi-bit words. Binary address inputs to the memory are decoded by a field effect transistor decoder into a plurality of word selection lines each of which activates an address buffer circuit. Each address buffer circuit, in turn, drives a word line of the memory array. In accordance with the word line selected by the decoder the activated buffer circuit directs reading or writing voltages to the transistors comprising the memory words. All of the buffer circuits additionally are connected to a common terminal for clearing all of the memory transistors to a predetermined state by the application to the common terminal of a large magnitude voltage of a predetermined polarity. The address decoder, the buffer and the memory array, as well as control and input/output control and buffer field effect transistor circuits, are fabricated on a common substrate with means provided to isolate the substrate of the address buffer transistors from the remainder of the substrate so that the bulk clearing function of simultaneously placing all of the memory transistors into a predetermined state can be performed.

Ion bipolar junction transistors

PubMed Central

Tybrandt, Klas; Larsson, Karin C.; Richter-Dahlfors, Agneta; Berggren, Magnus

2010-01-01

Dynamic control of chemical microenvironments is essential for continued development in numerous fields of life sciences. Such control could be achieved with active chemical circuits for delivery of ions and biomolecules. As the basis for such circuitry, we report a solid-state ion bipolar junction transistor (IBJT) based on conducting polymers and thin films of anion- and cation-selective membranes. The IBJT is the ionic analogue to the conventional semiconductor BJT and is manufactured using standard microfabrication techniques. Transistor characteristics along with a model describing the principle of operation, in which an anionic base current amplifies a cationic collector current, are presented. By employing the IBJT as a bioelectronic circuit element for delivery of the neurotransmitter acetylcholine, its efficacy in modulating neuronal cell signaling is demonstrated. PMID:20479274

Failure rates for accelerated acceptance testing of silicon transistors

NASA Technical Reports Server (NTRS)

Toye, C. R.

1968-01-01

Extrapolation tables for the control of silicon transistor product reliability have been compiled. The tables are based on a version of the Arrhenius statistical relation and are intended to be used for low- and medium-power silicon transistors.

T-gate aligned nanotube radio frequency transistors and circuits with superior performance.

PubMed

Che, Yuchi; Lin, Yung-Chen; Kim, Pyojae; Zhou, Chongwu

2013-05-28

In this paper, we applied self-aligned T-gate design to aligned carbon nanotube array transistors and achieved an extrinsic current-gain cutoff frequency (ft) of 25 GHz, which is the best on-chip performance for nanotube radio frequency (RF) transistors reported to date. Meanwhile, an intrinsic current-gain cutoff frequency up to 102 GHz is obtained, comparable to the best value reported for nanotube RF transistors. Armed with the excellent extrinsic RF performance, we performed both single-tone and two-tone measurements for aligned nanotube transistors at a frequency up to 8 GHz. Furthermore, we utilized T-gate aligned nanotube transistors to construct mixing and frequency doubling analog circuits operated in gigahertz frequency regime. Our results confirm the great potential of nanotube-based circuit applications and indicate that nanotube transistors are promising building blocks in high-frequency electronics.

Experiment for transient effects of sudden catastrophic loss of vacuum on a scaled superconducting radio frequency cryomodule

NASA Astrophysics Data System (ADS)

Dalesandro, Andrew A.; Theilacker, Jay; Van Sciver, Steven

2012-06-01

Safe operation of superconducting radio frequency (SRF) cavities require design consideration of a sudden catastrophic loss of vacuum (SCLV) adjacent with liquid helium (LHe) vessels and subsequent dangers. An experiment is discussed to test the longitudinal effects of SCLV along the beam line of a string of scaled SRF cavities. Each scaled cavity includes one segment of beam tube within a LHe vessel containing 2 K saturated LHe, and a riser pipe connecting the LHe vessel to a common gas header. At the beam tube inlet is a fast acting solenoid valve to simulate SCLV and a high/low range orifice plate flow-meter to measure air influx to the cavity. The gas header exit also has an orifice plate flow-meter to measure helium venting the system at the relief pressure of 0.4 MPa. Each cavity is instrumented with Validyne pressure transducers and Cernox thermometers. The purpose of this experiment is to quantify the time required to spoil the beam vacuum and the effects of transient heat and mass transfer on the helium system. Heat transfer data is expected to reveal a longitudinal effect due to the geometry of the experiment. Details of the experimental design criteria and objectives are presented.

Sterilization of Long Tube Inner Surface Using Oxygen and Water Vapor Plasmas Produced by AC HV Discharge

NASA Astrophysics Data System (ADS)

Kitazaki, Satoshi; Hayashi, Nobuya

2009-10-01

Oxygen and water vapor plasmas inside a narrow long tube were produced using an AC HV glow discharge at low pressure in order to sterilize the inner surface of a tube. In order to produce plasma inside a narrow tube, an AC high voltage was adopted. The material of the tube used in this experiment was silicon rubber. The length and diameter of the tubes ranged from 300 to 1,000 mm and from 1 to 4 mm, respectively. The tube was placed in a stainless steel vacuum chamber and was evacuated to 10 Pa using a rotary pump. The material gas for plasma and radical productions was pure oxygen or water vapor, which was introduced to the chamber from a gas cylinder or water reservoir. Light emission spectral lines of oxygen and OH radicals were observed at 777 nm and 306 nm, respectively. The chemical indicator was inserted into the tube and turned to a yellowish color (from the original red) after a treatment, which indicates the generation of sufficient oxygen on OH radicals for sterilization. A tube with the length of 500 mm and diameter of 4 mm is sterilized using oxygen plasma by 10 minutes treatment. Also a tube with the length of 300 mm and diameter of 2 mm is sterilized using water vapor plasma by 5 minutes treatment.

AlN/GaN heterostructures for normally-off transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhuravlev, K. S., E-mail: zhur@isp.nsc.ru; Malin, T. V.; Mansurov, V. G.

The structure of AlN/GaN heterostructures with an ultrathin AlN barrier is calculated for normally-off transistors. The molecular-beam epitaxy technology of in situ passivated SiN/AlN/GaN heterostructures with a two-dimensional electron gas is developed. Normally-off transistors with a maximum current density of ~1 A/mm, a saturation voltage of 1 V, a transconductance of 350 mS/mm, and a breakdown voltage of more than 60 V are demonstrated. Gate lag and drain lag effects are almost lacking in these transistors.

Photolithographically Patterned TiO2 Films for Electrolyte-Gated Transistors.

PubMed

Valitova, Irina; Kumar, Prajwal; Meng, Xiang; Soavi, Francesca; Santato, Clara; Cicoira, Fabio

2016-06-15

Metal oxides constitute a class of materials whose properties cover the entire range from insulators to semiconductors to metals. Most metal oxides are abundant and accessible at moderate cost. Metal oxides are widely investigated as channel materials in transistors, including electrolyte-gated transistors, where the charge carrier density can be modulated by orders of magnitude upon application of relatively low electrical bias (2 V). Electrolyte gating offers the opportunity to envisage new applications in flexible and printed electronics as well as to improve our current understanding of fundamental processes in electronic materials, e.g. insulator/metal transitions. In this work, we employ photolithographically patterned TiO2 films as channels for electrolyte-gated transistors. TiO2 stands out for its biocompatibility and wide use in sensing, electrochromics, photovoltaics and photocatalysis. We fabricated TiO2 electrolyte-gated transistors using an original unconventional parylene-based patterning technique. By using a combination of electrochemical and charge carrier transport measurements we demonstrated that patterning improves the performance of electrolyte-gated TiO2 transistors with respect to their unpatterned counterparts. Patterned electrolyte-gated (EG) TiO2 transistors show threshold voltages of about 0.9 V, ON/OFF ratios as high as 1 × 10(5), and electron mobility above 1 cm(2)/(V s).

Vacuum Virtues

ERIC Educational Resources Information Center

Rathey, Allen

2007-01-01

Upright vacuums, like cars, vary in quality, features and performance. Like automobiles, some uprights are reliable, others may be problematic, and some become a problem as a result of neglect or improper use. So, how do education institutions make an informed choice and, having done so, ensure that an upright vacuum goes the distance? In this…

Carrier Conduction and Light Emission by Modification of Poly(alkylfluorene) Interface under Vacuum Ultraviolet Light Irradiation

NASA Astrophysics Data System (ADS)

Ohmori, Yutaka; Kajii, Hirotake; Terashima, Daiki; Kusumoto, Yusuke

2013-03-01

Organic field effect transistors (OFETs) have been extensively studied for flexible electronics. The characteristics of poly(9,9-dioctylfluorenyl-2,7-dyl) (F8) modified by thermal or light are strongly dependent on the carrier transport and optical characteristics. We investigate all solution-processed OFETs with Ag nano-ink as gate electrodes patterned by Vacuum Ultraviolet (VUV) (172 nm). Bi-layer gate insulators of amorphous fluoro-polymer CYTOP (Asahi Glass Corp.) and poly(methylmethacrylate) (PMMA) were used. Top-gate-type OFETs with ITO source/drain electrode utilizing F8 or poly(9,9-dioctylfluorene-co-benzothiadiazole) (F8BT) as an active layer were fabricated, and investigated the carrier conduction and emission characteristic. Without VUV irradiation, both OFETs showed the ambipolar and light-emitting characteristics. On the other hand, F8 devices with VUV exhibited only p-type conduction. The quenching centers were generated in F8 layer by VUV irradiation, which are related to the electron trap sites at the interface. OFETs with F8BT showed both p- and n-type conduction even after VUV. F8BT suffers less damage by VUV and maintain light emission. Light emitting transistors were realized utilizing F8BT patterned by VUV irradiation. This research was partially supported financially by MEXT. The authors thank Harima Chemicals Inc. for providing Ag nano-ink.

Metal Oxide Silicon /MOS/ transistors protected from destructive damage by wire

NASA Technical Reports Server (NTRS)

Deboo, G. J.; Devine, E. J.

1966-01-01

Loop of flexible, small diameter, nickel wire protects metal oxide silicon /MOS/ transistors from a damaging electrostatic potential. The wire is attached to a music-wire spring, slipped over the MOS transistor case, and released so the spring tensions the wire loop around all the transistor leads, shorting them together. This allows handling without danger of damage.

Interchangeability of gas detection tubes and hand pumps.

PubMed

Haag, W R

2001-01-01

Users of gas detection tubes occasionally seek the convenience of using a single hand pump with different brands of tubes, to avoid the need to carry more than one pump. Several professional organizations recommend against such interchange. However, these recommendations appear to be based on a single study of pump designs that mostly are no longer in use. The present study was undertaken to determine if current hand pumps are interchangeable. Both piston-type and bellows-type hand pumps were evaluated by comparing pump flow profiles and test gas measurements with a variety of tubes. The results demonstrate that three piston hand pumps in common use (Sensidyne/Gastec GV/100, RAE Systems LP-1200, and Matheson-Kitagawa 8104-400A) are fully interchangeable. Two bellows pumps (Draeger Accuro and MSA Kwik-Draw) also are interchangeable with each other. Mixing of bellows and piston systems is often possible, but there are enough exceptions to conclude that such practice should be discouraged because it can give inaccurate readings. It is recommended that technical standards be adopted, such as total volume and an initial pump vacuum or a pump flow curve, to assess hand pump interchangeability. When two manufacturers' pumps meet the same standard and routine leak tests are conducted, interchangeability is scientifically valid and poses no risk to the end user while offering greater convenience.

Protective tubes for sodium heated water tubes

DOEpatents

Essebaggers, Jan

1979-01-01

A heat exchanger in which water tubes are heated by liquid sodium which minimizes the results of accidental contact between the water and the sodium caused by failure of one or more of the water tubes. A cylindrical protective tube envelopes each water tube and the sodium flows axially in the annular spaces between the protective tubes and the water tubes.

Switching Characteristics of Ferroelectric Transistor Inverters

NASA Technical Reports Server (NTRS)

Laws, Crystal; Mitchell, Coey; MacLeod, Todd C.; Ho, Fat D.

2010-01-01

This paper presents the switching characteristics of an inverter circuit using a ferroelectric field effect transistor, FeFET. The propagation delay time characteristics, phl and plh are presented along with the output voltage rise and fall times, rise and fall. The propagation delay is the time-delay between the V50% transitions of the input and output voltages. The rise and fall times are the times required for the output voltages to transition between the voltage levels V10% and V90%. Comparisons are made between the MOSFET inverter and the ferroelectric transistor inverter.

Current-Induced Transistor Sensorics with Electrogenic Cells

PubMed Central

Fromherz, Peter

2016-01-01

The concepts of transistor recording of electroactive cells are considered, when the response is determined by a current-induced voltage in the electrolyte due to cellular activity. The relationship to traditional transistor recording, with an interface-induced response due to interactions with the open gate oxide, is addressed. For the geometry of a cell-substrate junction, the theory of a planar core-coat conductor is described with a one-compartment approximation. The fast electrical relaxation of the junction and the slow change of ion concentrations are pointed out. On that basis, various recording situations are considered and documented by experiments. For voltage-gated ion channels under voltage clamp, the effects of a changing extracellular ion concentration and the enhancement/depletion of ion conductances in the adherent membrane are addressed. Inhomogeneous ion conductances are crucial for transistor recording of neuronal action potentials. For a propagating action potential, the effects of an axon-substrate junction and the surrounding volume conductor are distinguished. Finally, a receptor-transistor-sensor is described, where the inhomogeneity of a ligand–activated ion conductance is achieved by diffusion of the agonist and inactivation of the conductance. Problems with regard to a development of reliable biosensors are mentioned. PMID:27120627

Microfabricated triggered vacuum switch

DOEpatents

Roesler, Alexander W [Tijeras, NM; Schare, Joshua M [Albuquerque, NM; Bunch, Kyle [Albuquerque, NM

2010-05-11

A microfabricated vacuum switch is disclosed which includes a substrate upon which an anode, cathode and trigger electrode are located. A cover is sealed over the substrate under vacuum to complete the vacuum switch. In some embodiments of the present invention, a metal cover can be used in place of the trigger electrode on the substrate. Materials used for the vacuum switch are compatible with high vacuum, relatively high temperature processing. These materials include molybdenum, niobium, copper, tungsten, aluminum and alloys thereof for the anode and cathode. Carbon in the form of graphitic carbon, a diamond-like material, or carbon nanotubes can be used in the trigger electrode. Channels can be optionally formed in the substrate to mitigate against surface breakdown.

Connecting world youth with tobacco brands: YouTube and the internet policy vacuum on Web 2.0.

PubMed

Elkin, Lucy; Thomson, George; Wilson, Nick

2010-10-01

The internet is an ideal forum for tobacco marketing, as it is largely unregulated and there is no global governing body for controlling content. Nevertheless, tobacco companies deny advertising on the internet. To assess the extent and nature of English language videos available on the Web 2.0 domain 'YouTube' that contain tobacco brand images or words. The authors conducted a YouTube search using five leading non-Chinese cigarette brands worldwide. The themes and content of up to 40 of the most viewed videos returned for each search were analysed: a total of 163 videos. A majority of the 163 tobacco brand-related videos analysed (71.2%, 95% CI 63.9 to 77.7) had pro-tobacco content, versus a small minority (3.7%) having anti-tobacco content (95% CI 1.4 to 7.8). Most of these videos contained tobacco brand content (70.6%), the brand name in the title (71.2%) or smoking imagery content (50.9%). One pro-smoking music video had been viewed over 2 million times. The four most prominent themes of the videos were celebrity/movies, sports, music and 'archive', the first three of which represent themes of interest to a youth audience. Pro-tobacco videos have a significant presence on YouTube, consistent with indirect marketing activity by tobacco companies or their proxies. Since content may be removed from YouTube if it is found to breach copyright or if it contains offensive material, there is scope for the public and health organisations to request the removal of pro-tobacco content containing copyright or offensive material. Governments should also consider implementing Framework Convention on Tobacco Control requirements on the internet, to further reduce such pro-tobacco content.

Low-frequency switching in a transistor amplifier.

PubMed

Carroll, T L

2003-04-01

It is known from extensive work with the diode resonator that the nonlinear properties of a P-N junction can lead to period doubling, chaos, and other complicated behaviors in a driven circuit. There has been very little work on what happens when more than one P-N junction is present. In this work, the first step towards multiple P-N junction circuits is taken by doing both experiments and simulations with a single-transistor amplifier using a bipolar transistor. Period doubling and chaos are seen when the amplifier is driven with signals between 100 kHz and 1 MHz, and they coincide with a very low frequency switching between different period doubled (or chaotic) wave forms. The switching frequencies are between 5 and 10 Hz. The switching behavior was confirmed in a simplified model of the transistor amplifier.

Molecular thermal transistor: Dimension analysis and mechanism

NASA Astrophysics Data System (ADS)

Behnia, S.; Panahinia, R.

2018-04-01

Recently, large challenge has been spent to realize high efficient thermal transistors. Outstanding properties of DNA make it as an excellent nano material in future technologies. In this paper, we introduced a high efficient DNA based thermal transistor. The thermal transistor operates when the system shows an increase in the thermal flux despite of decreasing temperature gradient. This is what called as negative differential thermal resistance (NDTR). Based on multifractal analysis, we could distinguish regions with NDTR state from non-NDTR state. Moreover, Based on dimension spectrum of the system, it is detected that NDTR state is accompanied by ballistic transport regime. The generalized correlation sum (analogous to specific heat) shows that an irregular decrease in the specific heat induces an increase in the mean free path (mfp) of phonons. This leads to the occurrence of NDTR.

Thermal transistor behavior of a harmonic chain

NASA Astrophysics Data System (ADS)

Kim, Sangrak

2017-09-01

Thermal transistor behavior of a harmonic chain with three heat reservoirs is explicitly analyzed. Temperature profile and heat currents of the rather general system are formulated and then heat currents for the simplest system are exactly calculated. The matrix connecting the three temperatures of the reservoirs and those of the particles comprises a stochastic matrix. The ratios R 1 and R 2 between heat currents, characterizing thermal signals can be expressed in terms of two external variables and two material parameters. It is shown that the ratios R 1 and R 2 can have wide range of real values. The thermal system shows a thermal transistor behavior such as the amplification of heat current by appropriately controlling the two variables and two parameters. We explicitly demonstrate the characteristics and mechanisms of thermal transistor with the simplest model.