77 FR 42722 - Copper Valley Electric Association; Notice of Updated Environmental Analysis Preparation Schedule

Federal Register 2010, 2011, 2012, 2013, 2014

2012-07-20

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-002] Copper Valley...: Original License Application. b. Project No.: 13124-002. c. Applicant: Copper Valley Electric Association (Copper Valley). d. Name of Project: Allison Creek Project. e. Location: On the south side of Port Valdez...

76 FR 58256 - Notice of Application Tendered for Filing With the Commission; Copper Valley Electric Association...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-09-20

... Application Tendered for Filing With the Commission; Copper Valley Electric Association, Inc. Take notice that..., 2011. d. Applicant: Copper Valley Electric Association, Inc.. e. Name of Project: Allison Creek...: Federal Power Act 16 U.S.C. 791 (a)--825(r) . h. Applicant Contact: Robert A. Wilkinson, CEO, Copper...

2D Semiconductors for Valley-Polarized LEDs and Photodetectors

NASA Astrophysics Data System (ADS)

Yu, Ting

The recently discovered two-dimensional (2D) semiconductors, such as transitional-metal-dichalcogenide monolayers, have aroused great interest due to the underlying quantum physics and the appealing optoelectronic applications like atomically thin light-emitting diodes (LEDs) and photodetectors. On the one hand, valley-polarized electroluminescence and photocurrent from such monolayers have not caused enough attention but highly demanded as building blocks for the new generation valleytronic applications. On the other hand, most reports on these devices are based on the mechanically exfoliated small samples. Considering real applications, a strategy which could offer mass-product and high compatibility to the current planar processes is greatly demanded. Large-area samples prepared by chemical vapour deposition (CVD) are perfect candidates towards such a goal. Here, we report electrically tunable valley-polarized electroluminescence and the selective spin-valley-coupled photocurrent in optoelectronic devices based on monolayer WS2 and MoS2 grown by CVD, exhibiting large electroluminescence and photocurrent dichroisms of 81% and 60%, respectively. The controllable valley polarization and emission components of the electroluminescence have been realized by varying electrical injection of carriers. For the observed helicity-dependent photocurrent, the circular photogalvanic effect at resonant excitations has been found to take the dominant responsibility.

San Diego Gas and Electric Company Imperial Valley geothermal activities

NASA Technical Reports Server (NTRS)

Hinrichs, T. C.

1974-01-01

San Diego Gas and Electric and its wholly owned subsidiary New Albion Resources Co. have been affiliated with Magma Power Company, Magma Energy Inc. and Chevron Oil Company for the last 2-1/2 years in carrying out geothermal research and development in the private lands of the Imperial Valley. The steps undertaken in the program are reviewed and the sequence that must be considered by companies considering geothermal research and development is emphasized. Activities at the south end of the Salton Sea and in the Heber area of Imperial Valley are leading toward development of demonstration facilities within the near future. The current status of the project is reported.

76 FR 78628 - Copper Valley Electric Association, Inc.; Notice of Application and Applicant-Prepared EA...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-19

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-003] Copper Valley... Application: Major License. b. Project No.: P-13124-003. c. Date filed: August 30, 2011. d. Applicant: Copper.... 791 (a)-825(r). h. Applicant Contact: Robert A. Wilkinson, CEO, Copper Valley Electric Association...

Valleytronics in merging Dirac cones: All-electric-controlled valley filter, valve, and universal reversible logic gate

NASA Astrophysics Data System (ADS)

Ang, Yee Sin; Yang, Shengyuan A.; Zhang, C.; Ma, Zhongshui; Ang, L. K.

2017-12-01

Despite much anticipation of valleytronics as a candidate to replace the aging complementary metal-oxide-semiconductor (CMOS) based information processing, its progress is severely hindered by the lack of practical ways to manipulate valley polarization all electrically in an electrostatic setting. Here, we propose a class of all-electric-controlled valley filter, valve, and logic gate based on the valley-contrasting transport in a merging Dirac cones system. The central mechanism of these devices lies on the pseudospin-assisted quantum tunneling which effectively quenches the transport of one valley when its pseudospin configuration mismatches that of a gate-controlled scattering region. The valley polarization can be abruptly switched into different states and remains stable over semi-infinite gate-voltage windows. Colossal tunneling valley-pseudomagnetoresistance ratio of over 10 000 % can be achieved in a valley-valve setup. We further propose a valleytronic-based logic gate capable of covering all 16 types of two-input Boolean logics. Remarkably, the valley degree of freedom can be harnessed to resurrect logical reversibility in two-input universal Boolean gate. The (2 +1 ) polarization states (two distinct valleys plus a null polarization) reestablish one-to-one input-to-output mapping, a crucial requirement for logical reversibility, and significantly reduce the complexity of reversible circuits. Our results suggest that the synergy of valleytronics and digital logics may provide new paradigms for valleytronic-based information processing and reversible computing.

78 FR 38711 - Copper Valley Electric Association, Inc.; Notice of Availability of Environmental Assessment

Federal Register 2010, 2011, 2012, 2013, 2014

2013-06-27

... Electric Association, Inc.; Notice of Availability of Environmental Assessment In accordance with the... 47897), the Office of Energy Projects has reviewed Copper Valley Electric Association, Inc.'s... three digits in the docket number field to access the document. For assistance, contact FERC Online...

Resolving Large Pre-glacial Valleys Buried by Glacial Sediment Using Electric Resistivity Imaging (ERI)

NASA Astrophysics Data System (ADS)

Schmitt, D. R.; Welz, M.; Rokosh, C. D.; Pontbriand, M.-C.; Smith, D. G.

2004-05-01

Two-dimensional electric resistivity imaging (ERI) is the most exciting and promising geological tool in geomorphology and stratigraphy since development of ground-penetrating radar. Recent innovations in 2-D ERI provides a non-intrusive mean of efficiently resolving complex shallow subsurface structures under a number of different geological scenarios. In this paper, we test the capacity of ERI to image two large pre-late Wisconsinan-aged valley-fills in central Alberta and north-central Montana. Valley-fills record the history of pre-glacial and glacial sedimentary deposits. These fills are of considerable economical value as groundwater aquifers, aggregate resources (sand and gravel), placers (gold, diamond) and sometime gas reservoirs in Alberta. Although the approximate locations of pre-glacial valley-fills have been mapped, the scarcity of borehole (well log) information and sediment exposures make accurate reconstruction of their stratigraphy and cross-section profiles difficult. When coupled with borehole information, ERI successfully imaged three large pre-glacial valley-fills representing three contrasting geological settings. The Sand Coulee segment of the ancestral Missouri River, which has never been glaciated, is filled by electrically conductive pro-glacial lacustrine deposits over resistive sandstone bedrock. By comparison, the Big Sandy segment of the ancestral Missouri River valley has a complex valley-fill composed of till units interbedded with glaciofluvial gravel and varved clays over conductive shale. The fill is capped by floodplain, paludal and low alluvial fan deposits. The pre-glacial Onoway Valley (the ancestral North Saskatchewan River valley) is filled with thick, resistive fluvial gravel over conductive shale and capped with conductive till. The cross-sectional profile of each surveyed pre-glacial valley exhibits discrete benches (terraces) connected by steep drops, features that are hard to map using only boreholes. Best quality ERI

78 FR 71599 - Copper Valley Electric Association, Inc.; Notice of Availability of Environmental Assessment

Federal Register 2010, 2011, 2012, 2013, 2014

2013-11-29

... Electric Association, Inc.; Notice of Availability of Environmental Assessment In accordance with the... 47897), the Office of Energy Projects has reviewed Copper Valley Electric Association, Inc.'s....asp . Enter the docket number (P-13124) in the docket number field to access the document. You may...

Impurity-assisted electric control of spin-valley qubits in monolayer MoS2

NASA Astrophysics Data System (ADS)

Széchenyi, G.; Chirolli, L.; Pályi, A.

2018-07-01

We theoretically study a single-electron spin-valley qubit in an electrostatically defined quantum dot in a transition metal dichalcogenide monolayer, focusing on the example of MoS2. Coupling of the qubit basis states for coherent control is challenging, as it requires a simultaneous flip of spin and valley. Here, we show that a tilted magnetic field together with a short-range impurity, such as a vacancy, a substitutional defect, or an adatom, can give rise to a coupling between the qubit basis states. This mechanism renders the in-plane g-factor nonzero, and allows to control the qubit with an in-plane ac electric field, akin to electrically driven spin resonance. We evaluate the dependence of the in-plane g-factor and the electrically induced qubit Rabi frequency on the type and position of the impurity. We reveal highly unconventional features of the coupling mechanism, arising from symmetry-forbidden intervalley scattering, in the case when the impurity is located at a S site. Our results provide design guidelines for electrically controllable qubits in two-dimensional semiconductors.

Valley polarization in bismuth

NASA Astrophysics Data System (ADS)

Fauque, Benoit

2013-03-01

The electronic structure of certain crystal lattices can contain multiple degenerate valleys for their charge carriers to occupy. The principal challenge in the development of valleytronics is to lift the valley degeneracy of charge carriers in a controlled way. In bulk semi-metallic bismuth, the Fermi surface includes three cigar-shaped electron valleys lying almost perpendicular to the high symmetry axis known as the trigonal axis. The in-plane mass anisotropy of each valley exceeds 200 as a consequence of Dirac dispersion, which drastically reduces the effective mass along two out of the three orientations. According to our recent study of angle-dependent magnetoresistance in bismuth, a flow of Dirac electrons along the trigonal axis is extremely sensitive to the orientation of in-plane magnetic field. Thus, a rotatable magnetic field can be used as a valley valve to tune the contribution of each valley to the total conductivity. As a consequence of a unique combination of high mobility and extreme mass anisotropy in bismuth, the effect is visible even at room temperature in a magnetic field of 1 T. Thus, a modest magnetic field can be used as a valley valve in bismuth. The results of our recent investigation of angle-dependent magnetoresistance in other semi-metals and doped semiconductors suggest that a rotating magnetic field can behave as a valley valve in a multi-valley system with sizeable mass anisotropy.

Optical manipulation of valley pseduospin in 2D semiconductors

NASA Astrophysics Data System (ADS)

Ye, Ziliang

Valley polarization associated with the occupancy in the energy degenerate but quantum mechanically distinct valleys in the momentum space closely resembles spin polarization and has been proposed as a pseudospin carrier for future quantum information technologies. Monolayers of transition metal dichalcogenide (TMDC) crystals, with broken inversion symmetry and large spin-orbital coupling, support robust valley polarization and therefore provide an important platform for studying valley-dependent physics. Besides optical excitation and photoluminescence detection, valley polarization has been electrically measured through the valley Hall effect and created through spin injection from ferromagnetic semiconductor contacts. Moreover, the energy degeneracy of the valley degree of freedom has been lifted by the optical Stark effect. Recently, we have demonstrated optical manipulation of valley coherence, i.e., of the valley pseudospin, by the optical Stark effect in monolayer WSe2. Using below-bandgap circularly polarized light, we rotated the valley pseudospin on the femtosecond time scale. Both the direction and speed of the rotation can be optically controlled by tuning the dynamic phase of excitons in opposite valleys. The pseudospin rotation was identified by changes in the polarization of the photoluminescence. In addition, by varying the time delay between the excitation and control pulses, we directly probed the lifetime of the intervalley coherence. Similar rotation levels have also been observed in static magneto-optic experiments. Our work presents an important step towards the full control of the valley degree of freedom in 2D semiconductors. The work was done in collaboration with Dr. Dezheng Sun and Prof. Tony F. Heinz.

Coordinating plug-in electric vehicle charging with electric grid: Valley filling and target load following

NASA Astrophysics Data System (ADS)

Zhang, Li; Jabbari, Faryar; Brown, Tim; Samuelsen, Scott

2014-12-01

Plug-in electric vehicles (PEVs) shift energy consumption from petroleum to electricity for the personal transportation sector. This work proposes a decentralized charging protocol for PEVs with grid operators updating the cost signal. Each PEV calculates its own optimal charging profile only once based on the cost signal, after it is plugged in, and sends the result back to the grid operators. Grid operators only need to aggregate charging profiles and update the load and cost. The existing PEV characteristics, national household travel survey (NHTS), California Independent System Operator (CAISO) demand, and estimates for future renewable generation in California are used to simulate PEV operation, PEV charging profiles, grid demand, and grid net load (demand minus renewable). Results show the proposed protocol has good performance for overnight net load valley filling if the costs to be minimized are proportional to the net load. Annual results are shown in terms of overnight load variation and comparisons are made with grid level valley filling results. Further, a target load can be approached in the same manner by using the gap between current load and the target load as the cost. The communication effort involved is quite modest.

Visualizing Carrier Transport in Metal Halide Perovskite Nanoplates via Electric Field Modulated Photoluminescence Imaging.

PubMed

Hu, Xuelu; Wang, Xiao; Fan, Peng; Li, Yunyun; Zhang, Xuehong; Liu, Qingbo; Zheng, Weihao; Xu, Gengzhao; Wang, Xiaoxia; Zhu, Xiaoli; Pan, Anlian

2018-05-09

Metal halide perovskite nanostructures have recently been the focus of intense research due to their exceptional optoelectronic properties and potential applications in integrated photonics devices. Charge transport in perovskite nanostructure is a crucial process that defines efficiency of optoelectronic devices but still requires a deep understanding. Herein, we report the study of the charge transport, particularly the drift of minority carrier in both all-inorganic CsPbBr 3 and organic-inorganic hybrid CH 3 NH 3 PbBr 3 perovskite nanoplates by electric field modulated photoluminescence (PL) imaging. Bias voltage dependent elongated PL emission patterns were observed due to the carrier drift at external electric fields. By fitting the drift length as a function of electric field, we obtained the carrier mobility of about 28 cm 2 V -1 S -1 in the CsPbBr 3 perovskite nanoplate. The result is consistent with the spatially resolved PL dynamics measurement, confirming the feasibility of the method. Furthermore, the electric field modulated PL imaging is successfully applied to the study of temperature-dependent carrier mobility in CsPbBr 3 nanoplates. This work not only offers insights for the mobile carrier in metal halide perovskite nanostructures, which is essential for optimizing device design and performance prediction, but also provides a novel and simple method to investigate charge transport in many other optoelectronic materials.

Valley-symmetric quasi-1D transport in ballistic graphene

NASA Astrophysics Data System (ADS)

Lee, Hu-Jong

We present our recent studies on gate-defined valley-symmetric one-dimensional (1D) carrier guiding in ballistic monolayer graphene and valley-symmetry-protected topological 1D transport in ballistic bilayer graphene. Successful carrier guiding was realized in ballistic monolayer graphene even in the absence of a band gap by inducing a high distinction ( more than two orders of magnitude) in the carrier density between the region of a quasi-1D channel and the rest of the top-gated regions. Conductance of a channel shows quantized values in units of 4e2/ h, suggesting that the valley symmetry is preserved. For the latter, the topological 1D conduction was realized between two closely arranged insulating regions with inverted band gaps, induced under a pair of split dual gating with polarities opposite to each other. The maximum conductance along the boundary channel showed 4e2/ h, again with the preserved valley symmetry. The 1D topological carrier guiding demonstrated in this study affords a promising route to robust valleytronic applications and sophisticated valley-associated functionalities based on 2D materials. This work was funded by the National Research Foundation of Korea.

78 FR 61984 - Copper Valley Electric Association, Inc.; Notice of Application To Amend License and Accepted for...

Federal Register 2010, 2011, 2012, 2013, 2014

2013-10-09

... DEPARTMENT OF ENERGY Federal Energy Regulatory Commission [Project No. 13124-005] Copper Valley...: Amendment to License. b. Project No: 13124-005. c. Date Filed: September 27, 2013. d. Applicant: Copper..., Copper Valley Electric Association, Inc., P.O. Box 45, Mile 187 Glenn Highway, Glennallen, AK 99588, (907...

Study on Operation Optimization of Pumping Station's 24 Hours Operation under Influences of Tides and Peak-Valley Electricity Prices

NASA Astrophysics Data System (ADS)

Yi, Gong; Jilin, Cheng; Lihua, Zhang; Rentian, Zhang

2010-06-01

According to different processes of tides and peak-valley electricity prices, this paper determines the optimal start up time in pumping station's 24 hours operation between the rating state and adjusting blade angle state respectively based on the optimization objective function and optimization model for single-unit pump's 24 hours operation taking JiangDu No.4 Pumping Station for example. In the meantime, this paper proposes the following regularities between optimal start up time of pumping station and the process of tides and peak-valley electricity prices each day within a month: (1) In the rating and adjusting blade angle state, the optimal start up time in pumping station's 24 hours operation which depends on the tide generation at the same day varies with the process of tides. There are mainly two kinds of optimal start up time which include the time at tide generation and 12 hours after it. (2) In the rating state, the optimal start up time on each day in a month exhibits a rule of symmetry from 29 to 28 of next month in the lunar calendar. The time of tide generation usually exists in the period of peak electricity price or the valley one. The higher electricity price corresponds to the higher minimum cost of water pumping at unit, which means that the minimum cost of water pumping at unit depends on the peak-valley electricity price at the time of tide generation on the same day. (3) In the adjusting blade angle state, the minimum cost of water pumping at unit in pumping station's 24 hour operation depends on the process of peak-valley electricity prices. And in the adjusting blade angle state, 4.85%˜5.37% of the minimum cost of water pumping at unit will be saved than that of in the rating state.

A Feasibility Study of Sustainable Distributed Generation Technologies to Improve the electrical System on the Duck Valley Reservation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Herman Atkins, Shoshone-Paiute; Mark Hannifan, New West Technologies

A range of sustainable energy options were assessed for feasibility in addressing chronic electric grid reliability problems at Duck Valley IR. Wind power and building energy efficiency were determined to have the most merit, with the Duck Valley Tribes now well positioned to pursue large scale wind power development for on- and off-reservation sales.

Smart Valley Infrastructure.

ERIC Educational Resources Information Center

Maule, R. William

1994-01-01

Discusses prototype information infrastructure projects in northern California's Silicon Valley. The strategies of the public and private telecommunications carriers vying for backbone services and industries developing end-user infrastructure technologies via office networks, set-top box networks, Internet multimedia, and "smart homes"…

Electrical and optical transport properties of single layer WSe2

NASA Astrophysics Data System (ADS)

Tahir, M.

2018-03-01

The electronic properties of single layer WSe2 are distinct from the famous graphene due to strong spin orbit coupling, a huge band gap and an anisotropic lifting of the degeneracy of the valley degree of freedom under Zeeman field. In this work, band structure of the monolayer WSe2 is evaluated in the presence of spin and valley Zeeman fields to study the electrical and optical transport properties. Using Kubo formalism, an explicit expression for the electrical Hall conductivity is examined at finite temperatures. The electrical longitudinal conductivity is also evaluated. Further, the longitudinal and Hall optical conductivities are analyzed. It is observed that the contributions of the spin-up and spin-down states to the power absorption spectrum depend on the valley index. The numerical results exhibit absorption peaks as a function of photon energy, ℏ ω, in the range ∼ 1.5 -2 eV. Also, the optical response lies in the visible frequency range in contrast to the conventional two-dimensional electron gas or graphene where the response is limited to terahertz regime. This ability to isolate carriers in spin-valley coupled structures may make WSe2 a promising candidate for future spintronics, valleytronics and optical devices.

Differential carrier lifetime and transport effects in electrically injected III-nitride light-emitting diodes

NASA Astrophysics Data System (ADS)

Rashidi, A.; Nami, M.; Monavarian, M.; Aragon, A.; DaVico, K.; Ayoub, F.; Mishkat-Ul-Masabih, S.; Rishinaramangalam, A.; Feezell, D.

2017-07-01

This work describes a small-signal microwave method for determining the differential carrier lifetime and transport effects in electrically injected InGaN/GaN light-emitting diodes (LEDs). By considering the carrier diffusion, capture, thermionic escape, and recombination, the rate equations are used to derive an equivalent small-signal electrical circuit for the LEDs, from which expressions for the input impedance and modulation response are obtained. The expressions are simultaneously fit to the experimental data for the input impedance and modulation response for nonpolar InGaN/GaN micro-LEDs on free-standing GaN substrates. The fittings are used to extract the transport related circuit parameters and differential carrier lifetimes. The dependence of the parameters on the device diameter and current density is reported. We also derive approximations for the modulation response under low and high injection levels and show that the transport of carriers affects the modulation response of the device, especially at low injection levels. The methods presented are relevant to the design of high-speed LEDs for visible-light communication.

Non-permeable substrate carrier for electroplating

DOEpatents

Abas, Emmanuel Chua; Chen, Chen-An; Ma, Diana Xiaobing; Ganti, Kalyana Bhargava

2012-11-27

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Non-permeable substrate carrier for electroplating

DOEpatents

Abas, Emmanuel Chua; Chen, Chen-an; Ma, Diana Xiaobing; Ganti, Kalyana; Divino, Edmundo Anida; Ermita, Jake Randal G.; Capulong, Jose Francisco S.; Castillo, Arnold Villamor

2015-12-29

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier comprises a non-conductive carrier body on which the substrates are to be held. Electrically-conductive lines are embedded within the carrier body, and a plurality of contact clips are coupled to the electrically-conductive lines embedded within the carrier body. The contact clips hold the substrates in place and electrically couple the substrates to the electrically-conductive lines. The non-conductive carrier body is continuous so as to be impermeable to flow of electroplating solution through the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Effects of Carrier Confinement and Intervalley Scattering on Photoexcited Electron Plasma in Silicon.

PubMed

Sieradzki, A; Kuznicki, Z T

2013-01-01

The ultrafast reflectivity of silicon, excited and probed with femtosecond laser pulses, is studied for different wavelengths and energy densities. The confinement of carriers in a thin surface layer delimited by a nanoscale Si-layered system buried in a Si heavily-doped wafer reduces the critical density of carriers necessary to create the electron plasma by a factor of ten. We performed two types of reflectivity measurements, using either a single beam or two beams. The plasma strongly depends on the photon energy density because of the intervalley scattering of the electrons revealed by two different mechanisms assisted by the electron-phonon interaction. One mechanism leads to a negative differential reflectivity that can be attributed to an induced absorption in X valleys. The other mechanism occurs, when the carrier population is thermalizing and gives rise to a positive differential reflectivity corresponding to Pauli-blocked intervalley gamma to X scattering. These results are important for improving the efficiency of Si light-to-electricity converters, in which there is a possibility of multiplying carriers by nanostructurization of Si.

Existence of electric/magnetic signals related to unknown luminous lights observed in Hessdalen valley (Norway)?

NASA Astrophysics Data System (ADS)

Zlotnicki, J.; Yvetot, P.; Fauquet, F.

2012-04-01

Hessdalen valley, in Norway, is a north-south elongated basin of about 20 km by 10 km (latitude: 62°50'N, longitude: 11°12'E) in which few inhabitants are permanently living. Since several decades, scarce observations made mainly during night time have point out transient luminous lights, called Hessdalen phenomena ('HP'). Østfold University College was the first pioneer research centre which started to install visual and geophysical monitoring systems able to track the unknown lights (http://www.hessdalen.org/). The characteristics of the HP can be summarized as followed. They can appear in the low atmosphere, remain quite fixed and suddenly move up at a speed of several hundreds of km/s, for disappearing on the ground or in one the numerous lakes located in the area. The duration can be of a very seconds to a tens of minutes or more. The HP can be white, blue-white flashing lights, yellows or white lights and have different shapes with sizes up to some cubic metres. From 80 observations per month in the 1980's, the number has sharply decreased to about 20 per year nowadays. In 2010, French Research Centres started cooperation with Østfold University College and the Istituto di Radio Astronomia of Bologna (http://www.ira.inaf.it/). The objectives are to study radio emission in the frequency band 1 kHz to 5 MHz (see Farges et al., EGU 2012) and the possible disturbances of the electromagnetic (EM) field recorded at two remote stations located in the valley. The two EM stations are located a tens of kilometres apart along the valley axis. In the northern FIN station, a fluxgate magnetometer (resolution of 1/100 nT), two orthogonal induction coils (frequency band: 7 Hz - 8 kHz, resolution 1/100,000 nT), and two horizontal electric lines (few mV resolution) record the magnetic and electric fields, respectively. In addition, a vertical seismometer is linked to the multi-parameter FIN station. At the south OYU station, two induction coils and horizontal electric

Giant magnetic splitting inducing near-unity valley polarization in van der Waals heterostructures.

PubMed

Nagler, Philipp; Ballottin, Mariana V; Mitioglu, Anatolie A; Mooshammer, Fabian; Paradiso, Nicola; Strunk, Christoph; Huber, Rupert; Chernikov, Alexey; Christianen, Peter C M; Schüller, Christian; Korn, Tobias

2017-11-16

Monolayers of semiconducting transition metal dichalcogenides exhibit intriguing fundamental physics of strongly coupled spin and valley degrees of freedom for charge carriers. While the possibility of exploiting these properties for information processing stimulated concerted research activities towards the concept of valleytronics, maintaining control over spin-valley polarization proved challenging in individual monolayers. A promising alternative route explores type II band alignment in artificial van der Waals heterostructures. The resulting formation of interlayer excitons combines the advantages of long carrier lifetimes and spin-valley locking. Here, we demonstrate artificial design of a two-dimensional heterostructure enabling intervalley transitions that are not accessible in monolayer systems. The resulting giant effective g factor of -15 for interlayer excitons induces near-unity valley polarization via valley-selective energetic splitting in high magnetic fields, even after nonselective excitation. Our results highlight the potential to deterministically engineer novel valley properties in van der Waals heterostructures using crystallographic alignment.

Electric properties and carrier multiplication in breakdown sites in multi-crystalline silicon solar cells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schneemann, Matthias; Carius, Reinhard; Rau, Uwe

2015-05-28

This paper studies the effective electrical size and carrier multiplication of breakdown sites in multi-crystalline silicon solar cells. The local series resistance limits the current of each breakdown site and is thereby linearizing the current-voltage characteristic. This fact allows the estimation of the effective electrical diameters to be as low as 100 nm. Using a laser beam induced current (LBIC) measurement with a high spatial resolution, we find carrier multiplication factors on the order of 30 (Zener-type breakdown) and 100 (avalanche breakdown) as new lower limits. Hence, we prove that also the so-called Zener-type breakdown is followed by avalanche multiplication. Wemore » explain that previous measurements of the carrier multiplication using thermography yield results higher than unity, only if the spatial defect density is high enough, and the illumination intensity is lower than what was used for the LBIC method. The individual series resistances of the breakdown sites limit the current through these breakdown sites. Therefore, the measured multiplication factors depend on the applied voltage as well as on the injected photocurrent. Both dependencies are successfully simulated using a series-resistance-limited diode model.« less

Electrical transport of spin-polarized carriers in disordered ultrathin films.

PubMed

Hernandez, L M; Bhattacharya, A; Parendo, Kevin A; Goldman, A M

2003-09-19

Slow, nonexponential relaxation of electrical transport accompanied by memory effects has been induced in quench-condensed ultrathin amorphous Bi films by the application of a parallel magnetic field. This behavior, which is very similar to space-charge limited current flow, is found in extremely thin films well on the insulating side of the thickness-tuned superconductor-insulator transition. It may be the signature of a collective state that forms when the carriers are spin polarized at low temperatures and in high magnetic fields.

Monitoring method and apparatus using high-frequency carrier

DOEpatents

Haynes, Howard D.

1996-01-01

A method and apparatus for monitoring an electrical-motor-driven device by injecting a high frequency carrier signal onto the power line current. The method is accomplished by injecting a high frequency carrier signal onto an AC power line current. The AC power line current supplies the electrical-motor-driven device with electrical energy. As a result, electrical and mechanical characteristics of the electrical-motor-driven device modulate the high frequency carrier signal and the AC power line current. The high frequency carrier signal is then monitored, conditioned and demodulated. Finally, the modulated high frequency carrier signal is analyzed to ascertain the operating condition of the electrical-motor-driven device.

Monitoring method and apparatus using high-frequency carrier

DOEpatents

Haynes, H.D.

1996-04-30

A method and apparatus for monitoring an electrical-motor-driven device by injecting a high frequency carrier signal onto the power line current. The method is accomplished by injecting a high frequency carrier signal onto an AC power line current. The AC power line current supplies the electrical-motor-driven device with electrical energy. As a result, electrical and mechanical characteristics of the electrical-motor-driven device modulate the high frequency carrier signal and the AC power line current. The high frequency carrier signal is then monitored, conditioned and demodulated. Finally, the modulated high frequency carrier signal is analyzed to ascertain the operating condition of the electrical-motor-driven device. 6 figs.

Electrical system for pulse-width modulated control of a power inverter using phase-shifted carrier signals and related operating methods

DOEpatents

Welchko, Brian A [Torrance, CA

2012-02-14

Systems and methods are provided for pulse-width modulated control of power inverter using phase-shifted carrier signals. An electrical system comprises an energy source and a motor. The motor has a first set of windings and a second set of windings, which are electrically isolated from each other. An inverter module is coupled between the energy source and the motor and comprises a first set of phase legs coupled to the first set of windings and a second set of phase legs coupled to the second set of windings. A controller is coupled to the inverter module and is configured to achieve a desired power flow between the energy source and the motor by modulating the first set of phase legs using a first carrier signal and modulating the second set of phase legs using a second carrier signal. The second carrier signal is phase-shifted relative to the first carrier signal.

Externally controlled on-demand release of anti-HIV drug using magneto-electric nanoparticles as carriers.

PubMed

Nair, Madhavan; Guduru, Rakesh; Liang, Ping; Hong, Jeongmin; Sagar, Vidya; Khizroev, Sakhrat

2013-01-01

Although highly active anti-retroviral therapy has resulted in remarkable decline in the morbidity and mortality in AIDS patients, inadequately low delivery of anti-retroviral drugs across the blood-brain barrier results in virus persistence. The capability of high-efficacy-targeted drug delivery and on-demand release remains a formidable task. Here we report an in vitro study to demonstrate the on-demand release of azidothymidine 5'-triphosphate, an anti-human immunodeficiency virus drug, from 30 nm CoFe2O4@BaTiO3 magneto-electric nanoparticles by applying a low alternating current magnetic field. Magneto-electric nanoparticles as field-controlled drug carriers offer a unique capability of field-triggered release after crossing the blood-brain barrier. Owing to the intrinsic magnetoelectricity, these nanoparticles can couple external magnetic fields with the electric forces in drug-carrier bonds to enable remotely controlled delivery without exploiting heat. Functional and structural integrity of the drug after the release was confirmed in in vitro experiments with human immunodeficiency virus-infected cells and through atomic force microscopy, spectrophotometry, Fourier transform infrared and mass spectrometry studies.

Small Wind Electric Systems: A Guide Produced for the Tennessee Valley Authority (Revised) (Brochure)

DOE Office of Scientific and Technical Information (OSTI.GOV)

Not Available

2009-06-01

Small Wind Electric Systems: A Guide Produced for the Tennessee Valley Authority provides consumers with information to help them determine whether a small wind electric system can provide all or a portion of the energy they need for their home or business based on their wind resource, energy needs, and their economics. Topics discussed in the guide include how to make a home more energy efficient, how to choose the correct turbine size, the parts of a wind electric system, how to determine whether enough wind resource exists, how to choose the best site for a turbine, how to connectmore » a system to the utility grid, and whether it's possible to become independent of the utility grid using wind energy. In addition, the cover of the guide contains a regional wind resource map and a list of incentives and contacts for more information.« less

Valley switch in a graphene superlattice due to pseudo-Andreev reflection

NASA Astrophysics Data System (ADS)

Beenakker, C. W. J.; Gnezdilov, N. V.; Dresselhaus, E.; Ostroukh, V. P.; Herasymenko, Y.; Adagideli, I.; Tworzydło, J.

2018-06-01

Dirac electrons in graphene have a valley degree of freedom that is being explored as a carrier of information. In that context of "valleytronics" one seeks to coherently manipulate the valley index. Here, we show that reflection from a superlattice potential can provide a valley switch: Electrons approaching a pristine-graphene-superlattice-graphene interface near normal incidence are reflected in the opposite valley. We identify the topological origin of this valley switch, by mapping the problem onto that of Andreev reflection from a topological superconductor, with the electron-hole degree of freedom playing the role of the valley index. The valley switch is ideal at a symmetry point of the superlattice potential, but remains close to 100% in a broad parameter range.

Carrier mobility and scattering lifetime in electric double-layer gated few-layer graphene

NASA Astrophysics Data System (ADS)

Piatti, E.; Galasso, S.; Tortello, M.; Nair, J. R.; Gerbaldi, C.; Bruna, M.; Borini, S.; Daghero, D.; Gonnelli, R. S.

2017-02-01

We fabricate electric double-layer field-effect transistor (EDL-FET) devices on mechanically exfoliated few-layer graphene. We exploit the large capacitance of a polymeric electrolyte to study the transport properties of three, four and five-layer samples under a large induced surface charge density both above and below the glass transition temperature of the polymer. We find that the carrier mobility shows a strong asymmetry between the hole and electron doping regime. We then employ ab initio density functional theory (DFT) calculations to determine the average scattering lifetime from the experimental data. We explain its peculiar dependence on the carrier density in terms of the specific properties of the electrolyte we used in our experiments.

Dynamics of valley pseudospin in single-layer WSe2. Inter-valley scattering mediated by electron-phonon interaction

NASA Astrophysics Data System (ADS)

Molina-Sanchez, Alejandro; Sangalli, Davide; Wirtz, Ludger; Marini, Andrea

In a time-dependent Kerr experiment a circularly polarized laser field is used to selectively populate the K+/- electronic valleys of single-layer WSe2. This carrier population corresponds to a finite pseudospin polarization that dictates the valleytronic properties of WSe2, but whose decay mechanism still remains largely debated. Time-dependent Kerr experiments provide an accurate way to visualize the pseudospin dynamics by measuring the rotation of a linearly polarized probe pulse applied after a circularly polarized and short pump pulse. We present here a clear, accurate and parameter-free description of the valley pseudospin dynamics in single-layer WSe2. By using an ab-initio approach we solve unambiguously the long standing debate about the dominant mechanism that drives the valley depolarization. Our results are in excellent agreement with recent time-dependent Kerr experiments. The decay dynamics and peculiar temperature dependence is explained in terms of electron phonon mediated processes that induce spin-flip inter-valley transitions.

Valley-locked thermospin effect in silicene and germanene with asymmetric magnetic field induced by ferromagnetic proximity effect

NASA Astrophysics Data System (ADS)

Zhai, Xuechao; Wang, Yun-Tong; Wen, Rui; Wang, Shu-Xuan; Tian, Yue; Zhou, Xingfei; Chen, Wei; Yang, Zhihong

2018-02-01

Silicene and germanene, as graphenelike materials with observable spin-orbit couplings and two distinctive valleys, have potential applications in future low-dissipation spintronics and valleytronics. We here propose a magnetic system of silicene or germanene intercalated between two ferromagetic (FM) dielectric layers, and find that the system with a proximity-induced asymmetric magnetic field supports an attractive phenomenon named the valley-locked spin-dependent Seebeck effect (VL-SSE) driven by a thermal gradient. The VL-SSE indicates that the carries from only one valley could be thermally excited, with opposite spin polarization counterpropagating along the thermal gradient direction, while nearly no carrier from the other insulating valley is excited due to the relatively wide band gap. It is also illustrated that the VL-SSE here does not survive in the usual FM or anti-FM systems, and can be destroyed by the overlarge temperature broadening. Moreover, we prove that the signal for VL-SSE can be weakened gradually with the enhancement of the local interlayer electric field, and be strengthened lineally by increasing the source-drain temperature difference in a caloritronic field effect transistor. Further calculations indicate that the VL-SSE is robust against many perturbations, including the global and local Fermi levels as well as the magnetic strength. These findings about the valley-locked thermospin effect provide a nontrivial and convenient dimension to control the quantum numbers of spin and valley and are expected to be applied in future spin-valley logic circuits and energy-saving devices.

EQUALIZING THE ELECTRIC FIELD INTENSITY WITHIN CHICK BRAIN IMMERSED IN BUFFER SOLUTION AT DIFFERENT CARRIER FREQUENCIES

EPA Science Inventory

Presented here are the numerical relationships between incident power densities that produce the same average electric field intensity within a chick brain half immersed in buffered saline solution and exposed to a uniform electromagnetic field at carrier frequencies of 50, 147, ...

Spin and valley filter across line defect in silicene

NASA Astrophysics Data System (ADS)

Wang, Sake; Ren, Chongdan; Li, Yunfang; Tian, Hongyu; Lu, Weitao; Sun, Minglei

2018-05-01

We propose a new scheme to achieve an effective spin/valley filter in silicene with extended line defect on the basis of spin–valley coupling due to the intrinsic spin-orbit coupling (SOC). The transmission coefficient of the spin/valley states is seriously affected by the SOC. When a perpendicular magnetic field is applied on one side of the line defect, one valley state will experience backscattering, but the other valley will not; this leads to high valley polarization in all transmission directions. Moreover, the spin/valley polarization can be enhanced to 96% with the aid of a perpendicular electric field.

Robust spin-valley polarization in commensurate Mo S2 /graphene heterostructures

NASA Astrophysics Data System (ADS)

Du, Luojun; Zhang, Qian; Gong, Benchao; Liao, Mengzhou; Zhu, Jianqi; Yu, Hua; He, Rui; Liu, Kai; Yang, Rong; Shi, Dongxia; Gu, Lin; Yan, Feng; Zhang, Guangyu; Zhang, Qingming

2018-03-01

The investigation and control of quantum degrees of freedom (DoFs) of carriers lie at the heart of condensed-matter physics and next-generation electronics/optoelectronics. van der Waals heterostructures stacked from distinct two-dimensional (2D) crystals offer an unprecedented platform for combining the superior properties of individual 2D materials and manipulating spin, layer, and valley DoFs. Mo S2 /graphene heterostructures, harboring prominent spin-transport properties of graphene, giant spin-orbit coupling, and spin-valley polarization of Mo S2 , are predicted as a perfect venue for optospintronics. Here, we report the epitaxial growth of commensurate Mo S2 on graphene with high quality by chemical vapor deposition, and demonstrate robust temperature-independent spin-valley polarization at off-resonant excitation. We further show that the helicity of B exciton is larger than that of A exciton, allowing the manipulation of spin bits in the commensurate heterostructures by both optical helicity and wavelength. Our results open a window for controlling spin DoF by light and pave a way for taking spin qubits as information carriers in the next-generation valley-controlled optospintronics.

Valley-contrasting physics in all-dielectric photonic crystals: Orbital angular momentum and topological propagation

NASA Astrophysics Data System (ADS)

Chen, Xiao-Dong; Zhao, Fu-Li; Chen, Min; Dong, Jian-Wen

2017-07-01

The valley has been exploited as a binary degree of freedom to realize valley-selective Hall transport and circular dichroism in two-dimensional layered materials, in which valley-contrasting physics is indispensable in making the valley index an information carrier. In this Rapid Communication, we reveal valley-contrasting physics in all-dielectric valley photonic crystals. The link between the angular momentum of light and the valley state is discussed, and unidirectional excitation of the valley chiral bulk state is realized by sources carrying orbital angular momentum with proper chirality. Characterized by the nonzero valley Chern number, valley-dependent edge states and the resultant broadband robust transport is found in such an all-dielectric system. Our work has potential in the orbital angular momentum assisted light manipulation and the discovery of valley-protected topological states in nanophotonics and on-chip integration.

Transport anomalies of high-mobility Q-valley electrons in few-layer WS2 and MoS2

NASA Astrophysics Data System (ADS)

Wang, Ning

Atomically thin transition metal dichalcogenides (TMDCs) have opened new avenues for exploring physical property anomalies due to their large band gaps, strong spin-orbit couplings, and rich valley degrees of freedom. Although novel optical phenomena such as valley selective circular dichroism, opto-valley Hall effect, and valley Zeeman effect have been extensively studied in TMDCs, investigation of quantum transport properties has encountered a number of obstacles primarily due to the low carrier mobility and strong impurity scattering. Recently, we successfully fabricated ultrahigh-mobility few-layer TMDC field-effect transistors based on the boron nitride encapsulation method and observed a number of interesting transport properties, such as even-odd layer-dependent magnetotransport of Q-valley electrons in WS2 and MoS2 and unconventional quantum Hall transport of Γ-valley hole carriers in WSe2. In few-layer samples of these TMDCs, the conduction bands along the ΓK directions shift downward energetically in the presence of interlayer interactions, forming six Q-valleys related by three-fold rotational symmetry and time reversal symmetry. In even-layers the extra inversion symmetry requires all states to be Kramers degenerate, whereas in odd-layers the intrinsic inversion asymmetry dictates the Q-valleys to be spin-valley coupled. In this talk, I'll demonstrate the prominent Shubnikov-de Hass (SdH) oscillations and the observation of the onset of quantum Hall plateaus for the Q-valley electrons. Universally in the SdH oscillations, we observe a valley Zeeman effect in all odd-layer TMDC devices and a spin Zeeman effect in all even-layer TMDC devices. In addition, we observe a series of quantum Hall states following an unconventional sequence predominated by odd-integer states under a moderate strength magnetic field in p-type few-layer TMDCs, indicating a large Zeeman energy associated with the carriers in the valence band at the Γ-valley. Financial supports

Valley excitons in two-dimensional semiconductors

DOE PAGES

Yu, Hongyi; Cui, Xiaodong; Xu, Xiaodong; ...

2014-12-30

Monolayer group-VIB transition metal dichalcogenides have recently emerged as a new class of semiconductors in the two-dimensional limit. The attractive properties include: the visible range direct band gap ideal for exploring optoelectronic applications; the intriguing physics associated with spin and valley pseudospin of carriers which implies potentials for novel electronics based on these internal degrees of freedom; the exceptionally strong Coulomb interaction due to the two-dimensional geometry and the large effective masses. The physics of excitons, the bound states of electrons and holes, has been one of the most actively studied topics on these two-dimensional semiconductors, where the excitons exhibitmore » remarkably new features due to the strong Coulomb binding, the valley degeneracy of the band edges, and the valley dependent optical selection rules for interband transitions. Here we give a brief overview of the experimental and theoretical findings on excitons in two-dimensional transition metal dichalcogenides, with focus on the novel properties associated with their valley degrees of freedom.« less

Effect of carrier doping and external electric field on the optical properties of graphene quantum dots

NASA Astrophysics Data System (ADS)

Basak, Tista; Basak, Tushima

2018-02-01

In this paper, we demonstrate that the optical properties of finite-sized graphene quantum dots can be effectively controlled by doping it with different types of charge carriers (electron/hole). In addition, the role played by a suitably directed external electric field on the optical absorption of charge-doped graphene quantum dots have also been elucidated. The computations have been performed on diamond-shaped graphene quantum dot (DQD) within the framework of the Pariser-Parr-Pople (PPP) model Hamiltonian, which takes into account long-range Coulomb interactions. Our results reveal that the energy band-gap increases when the DQD is doped with holes while it decreases on doping it with electrons. Further, the optical absorption spectra of DQD exhibits red/blue-shift on doping with electrons/holes. Our computations also indicate that the application of external transverse electric field results in a substantial blue-shift of the optical spectrum for charge-doped DQD. However, it is observed that the influence of charge-doping is more prominent in tuning the optical properties of finite-sized graphene quantum dots as compared to externally applied electric field. Thus, tailoring the optical properties of finite-sized graphene quantum dots by manipulative doping with charge carriers and suitably aligned external electric field can greatly enhance its potential application in designing nano-photonic devices.

Electrical Conductivity of Rocks and Dominant Charge Carriers. Part 1; Thermally Activated Positive Holes

NASA Technical Reports Server (NTRS)

Freund, Friedemann T.; Freund, Minoru M.

2012-01-01

The prevailing view in the geophysics community is that the electrical conductivity structure of the Earth's continental crust over the 5-35 km depth range can best be understood by assuming the presence of intergranular fluids and/or of intragranular carbon films. Based on single crystal studies of melt-grown MgO, magma-derived sanidine and anorthosite feldspars and upper mantle olivine, we present evidence for the presence of electronic charge carriers, which derive from peroxy defects that are introduced during cooling, under non-equilibrium conditions, through a redox conversion of pairs of solute hydroxyl arising from dissolution of H2O.The peroxy defects become thermally activated in a 2-step process, leading to the release of defect electrons in the oxygen anion sublattice. Known as positive holes and symbolized by h(dot), these electronic charge carriers are highly mobile. Chemically equivalent to O(-) in a matrix of O(2-) they are highly oxidizing. Being metastable they can exist in the matrix of minerals, which crystallized in highly reduced environments. The h(dot) are highly mobile. They appear to control the electrical conductivity of crustal rocks in much of the 5-35 km depth range.

Bimodal behaviour of charge carriers in graphene induced by electric double layer

PubMed Central

Tsai, Sing-Jyun; Yang, Ruey-Jen

2016-01-01

A theoretical investigation is performed into the electronic properties of graphene in the presence of liquid as a function of the contact area ratio. It is shown that the electric double layer (EDL) formed at the interface of the graphene and the liquid causes an overlap of the conduction bands and valance bands and increases the density of state (DOS) at the Fermi energy (EF). In other words, a greater number of charge carriers are induced for transport and the graphene changes from a semiconductor to a semimetal. In addition, it is shown that the dependence of the DOS at EF on the contact area ratio has a bimodal distribution which responses to the experimental observation, a pinnacle curve. The maximum number of induced carriers is expected to occur at contact area ratios of 40% and 60%. In general, the present results indicate that modulating the EDL provides an effective means of tuning the electronic properties of graphene in the presence of liquid. PMID:27464986

Observation of topological valley transport of sound in sonic crystals

NASA Astrophysics Data System (ADS)

Lu, Jiuyang; Qiu, Chunyin; Ye, Liping; Fan, Xiying; Ke, Manzhu; Zhang, Fan; Liu, Zhengyou

2017-04-01

The concept of valley pseudospin, labelling quantum states of energy extrema in momentum space, is attracting attention because of its potential as a new type of information carrier. Compared with the non-topological bulk valley transport, realized soon after predictions, topological valley transport in domain walls is extremely challenging owing to the inter-valley scattering inevitably induced by atomic-scale imperfections--but an electronic signature was recently observed in bilayer graphene. Here, we report the experimental observation of topological valley transport of sound in sonic crystals. The macroscopic nature of sonic crystals permits a flexible and accurate design of domain walls. In addition to a direct visualization of the valley-selective edge modes through spatial scanning of the sound field, reflection immunity is observed in sharply curved interfaces. The topologically protected interface transport of sound, strikingly different from that in traditional sound waveguides, may serve as the basis for designing devices with unconventional functions.

Protective carrier for microcircuit devices

DOEpatents

Robinson, Lyle A.

1976-10-26

An improved protective carrier for microcircuit devices having beam leads wherein a compressible member is disposed on the carrier base beneath and overlapping the periphery of an aperture in a flexible circuit element, the element being adapted to receive and make electrical contact with microcircuit device beam leads, the compressible member disposed or arranged to achieve flexing of the circuit element against the microcircuit device beam leads to conform to variations in thicknesses of the device beam leads or circuit element electrical paths and thereby insure electrical connection between the beam leads and the electrical paths.

Ultrafast Multi-Level Logic Gates with Spin-Valley Coupled Polarization Anisotropy in Monolayer MoS2

PubMed Central

Wang, Yu-Ting; Luo, Chih-Wei; Yabushita, Atsushi; Wu, Kaung-Hsiung; Kobayashi, Takayoshi; Chen, Chang-Hsiao; Li, Lain-Jong

2015-01-01

The inherent valley-contrasting optical selection rules for interband transitions at the K and K′ valleys in monolayer MoS2 have attracted extensive interest. Carriers in these two valleys can be selectively excited by circularly polarized optical fields. The comprehensive dynamics of spin valley coupled polarization and polarized exciton are completely resolved in this work. Here, we present a systematic study of the ultrafast dynamics of monolayer MoS2 including spin randomization, exciton dissociation, free carrier relaxation, and electron-hole recombination by helicity- and photon energy-resolved transient spectroscopy. The time constants for these processes are 60 fs, 1 ps, 25 ps, and ~300 ps, respectively. The ultrafast dynamics of spin polarization, valley population, and exciton dissociation provides the desired information about the mechanism of radiationless transitions in various applications of 2D transition metal dichalcogenides. For example, spin valley coupled polarization provides a promising way to build optically selective-driven ultrafast valleytronics at room temperature. Therefore, a full understanding of the ultrafast dynamics in MoS2 is expected to provide important fundamental and technological perspectives. PMID:25656222

Three-dimensional electrical resistivity model of the hydrothermal system in Long Valley Caldera, California, from magnetotellurics

USGS Publications Warehouse

Peacock, Jared R.; Mangan, Margaret T.; McPhee, Darcy K.; Wannamaker, Phil E.

2016-01-01

Though shallow flow of hydrothermal fluids in Long Valley Caldera, California, has been well studied, neither the hydrothermal source reservoir nor heat source has been well characterized. Here a grid of magnetotelluric data were collected around the Long Valley volcanic system and modeled in 3-D. The preferred electrical resistivity model suggests that the source reservoir is a narrow east-west elongated body 4 km below the west moat. The heat source could be a zone of 2–5% partial melt 8 km below Deer Mountain. Additionally, a collection of hypersaline fluids, not connected to the shallow hydrothermal system, is found 3 km below the medial graben, which could originate from a zone of 5–10% partial melt 8 km below the south moat. Below Mammoth Mountain is a 3 km thick isolated body containing fluids and gases originating from an 8 km deep zone of 5–10% basaltic partial melt.

Bioactivity of electric field-pulsed human recombinant interleukin-2 and its encapsulation into erythrocyte carriers.

PubMed

Mitchell, D H; James, G T; Kruse, C A

1990-06-01

The molecular integrity of human recombinant interleukin-2 (rIL-2), as measured by size exclusion chromatography, was not altered when exposed to high electrical field intensities. In addition, the biological activity was unaffected, as evidenced by the ability of the rIL-2 to stimulate the proliferation (by cell growth assays and tritiated thymidine uptake) and differentiation (by cytotoxicity assay) of human lymphocytes into killer cells. Electroporation conditions chosen for the loading of rIL-2, based upon those which provided for good recovery of carriers and minimal hemoglobin release, involved a lower field intensity (i.e., 6 kV/cm instead of 7 or 8 kV/cm) and multiple pulses (eight pulses, 5 microseconds) rather than a single pulse (40 microseconds). Human erythrocyte carriers consistently encapsulated 5-7.5% of the rIL-2 by electroporation (6 kV/cm, eight pulses, 5 microseconds duration). A rIL-2 concentration of 600,000 U/ml surrounding the erythrocytes during loading resulted in ca. 245,000 U/ml carriers, which represents a therapeutically significant quantity. Thus, rIL-2 shows potential as an encapsulated agent for slow release in the erythrocyte carrier system.

Castro Valley High School's Solar Panels

NASA Astrophysics Data System (ADS)

Lew, A.; Ham, S.; Shin, Y.; Yang, W.; Lam, J.

2014-12-01

Solar panels are photovoltaic cells that are designed to convert the sun's kinetic energy to generate usable energy in the form of electricity. Castro Valley High School has tried to offset the cost of electricity by installing solar panels, costing the district approximately 3.29 million dollars, but have been installed incorrectly and are not operating at peak efficency. By using trigonometry we deduced that Castro Valley High School's south facing solar panels were at an incline of 10o and that the east and west facing solar panels are at an incline of 5o. By taking the averages of the optimum angles for the months of September through May, roughly when school is in session, we found that the optimum angle for south facing solar panels should be roughly 46o. This shows that Castro Valley High School has not used it's budget to its full potential due to the fact that the solar panels were haphazardly installed.

Intelligent electric vehicle charging: Rethinking the valley-fill

NASA Astrophysics Data System (ADS)

Valentine, Keenan; Temple, William G.; Zhang, K. Max

This study proposes an intelligent PEV charging scheme that significantly reduces power system cost while maintaining reliability compared to the widely discussed valley-fill method of aggregated charging in the early morning. This study considers optimal PEV integration into the New York Independent System Operator's (NYISO) day-ahead and real-time wholesale energy markets for 21 days in June, July, and August of 2006, a record-setting summer for peak load. NYISO market and load data is used to develop a statistical Locational Marginal Price (LMP) and wholesale energy cost model. This model considers the high cost of ramping generators at peak-load and the traditional cost of steady-state operation, resulting in a framework with two competing cost objectives. Results show that intelligent charging assigns roughly 80% of PEV load to valley hours to take advantage of low steady-state cost, while placing the remaining 20% equally at shoulder and peak hours to reduce ramping cost. Compared to unregulated PEV charging, intelligent charging reduces system cost by 5-16%; a 4-9% improvement over the flat valley-fill approach. Moreover, a Charge Flexibility Constraint (CFC), independent of market modeling, is constructed from a vehicle-at-home profile and the mixture of Level 1 and Level 2 charging infrastructure. The CFC is found to severely restrict the ability to charge vehicles during the morning load valley. This study further shows that adding more Level 2 chargers without regulating PEV charging will significantly increase wholesale energy cost. Utilizing the proposed intelligent PEV charging method, there is a noticeable reduction in system cost if the penetration of Level 2 chargers is increased from 70/30 to 50/50 (Level 1/Level 2). However, the system benefit is drastically diminished for higher penetrations of Level 2 chargers.

Pilot evaluation of electricity-reliability and power-quality monitoring in California's Silicon Valley with the I-Grid(R) system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eto, Joseph; Divan, Deepak; Brumsickle, William

2004-02-01

Power-quality events are of increasing concern for the economy because today's equipment, particularly computers and automated manufacturing devices, is susceptible to these imperceptible voltage changes. A small variation in voltage can cause this equipment to shut down for long periods, resulting in significant business losses. Tiny variations in power quality are difficult to detect except with expensive monitoring equipment used by trained technicians, so many electricity customers are unaware of the role of power-quality events in equipment malfunctioning. This report describes the findings from a pilot study coordinated through the Silicon Valley Manufacturers Group in California to explore the capabilitiesmore » of I-Grid(R), a new power-quality monitoring system. This system is designed to improve the accessibility of power-quality in formation and to increase understanding of the growing importance of electricity reliability and power quality to the economy. The study used data collected by I-Grid sensors at seven Silicon Valley firms to investigate the impacts of power quality on individual study participants as well as to explore the capabilities of the I-Grid system to detect events on the larger electricity grid by means of correlation of data from the sensors at the different sites. In addition, study participants were interviewed about the value they place on power quality, and their efforts to address electricity-reliability and power-quality problems. Issues were identified that should be taken into consideration in developing a larger, potentially nationwide, network of power-quality sensors.« less

Observation of ultralong valley lifetime in WSe 2/MoS 2 heterostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jonghwan; Jin, Chenhao; Chen, Bin

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe 2/MoS 2 heterostructuresmore » by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe 2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.« less

Observation of ultralong valley lifetime in WSe 2/MoS 2 heterostructures

DOE PAGES

Kim, Jonghwan; Jin, Chenhao; Chen, Bin; ...

2017-07-26

The valley degree of freedom in two-dimensional (2D) crystals recently emerged as a novel information carrier in addition to spin and charge. The intrinsic valley lifetime in 2D transition metal dichalcogenides (TMD) is expected to be markedly long due to the unique spin-valley locking behavior, where the intervalley scattering of the electron simultaneously requires a large momentum transfer to the opposite valley and a flip of the electron spin. However, the experimentally observed valley lifetime in 2D TMDs has been limited to tens of nanoseconds thus far. We report efficient generation of microsecond-long-lived valley polarization in WSe 2/MoS 2 heterostructuresmore » by exploiting the ultrafast charge transfer processes in the heterostructure that efficiently creates resident holes in the WSe 2 layer. These valley-polarized holes exhibit near-unity valley polarization and ultralong valley lifetime: We observe a valley-polarized hole population lifetime of more than 1 μs and a valley depolarization lifetime (that is, intervalley scattering lifetime) of more than 40 μs at 10 K. The near-perfect generation of valley-polarized holes in TMD heterostructures, combined with ultralong valley lifetime, which is orders of magnitude longer than previous results, opens up new opportunities for novel valleytronics and spintronics applications.« less

Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures

NASA Astrophysics Data System (ADS)

Jin, Chenhao; Kim, Jonghwan; Utama, M. Iqbal Bakti; Regan, Emma C.; Kleemann, Hans; Cai, Hui; Shen, Yuxia; Shinner, Matthew James; Sengupta, Arjun; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wang, Feng

2018-05-01

Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS2)–tungsten diselenide (WSe2) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field–free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices.

Bedrock mapping of buried valley networks using seismic reflection and airborne electromagnetic data

NASA Astrophysics Data System (ADS)

Oldenborger, G. A.; Logan, C. E.; Hinton, M. J.; Pugin, A. J.-M.; Sapia, V.; Sharpe, D. R.; Russell, H. A. J.

2016-05-01

In glaciated terrain, buried valleys often host aquifers that are significant groundwater resources. However, given the range of scales, spatial complexity and depth of burial, buried valleys often remain undetected or insufficiently mapped. Accurate and thorough mapping of bedrock topography is a crucial step in detecting and delineating buried valleys and understanding formative valley processes. We develop a bedrock mapping procedure supported by the combination of seismic reflection data and helicopter time-domain electromagnetic data with water well records for the Spiritwood buried valley aquifer system in Manitoba, Canada. The limited spatial density of water well bedrock observations precludes complete depiction of the buried valley bedrock topography and renders the water well records alone inadequate for accurate hydrogeological model building. Instead, we leverage the complementary strengths of seismic reflection and airborne electromagnetic data for accurate local detection of the sediment-bedrock interface and for spatially extensive coverage, respectively. Seismic reflection data are used to define buried valley morphology in cross-section beneath survey lines distributed over a regional area. A 3D model of electrical conductivity is derived from inversion of the airborne electromagnetic data and used to extrapolate buried valley morphology over the entire survey area. A spatially variable assignment of the electrical conductivity at the bedrock surface is applied to different features of the buried valley morphology identified in the seismic cross-sections. Electrical conductivity is then used to guide construction of buried valley shapes between seismic sections. The 3D locus of points defining each morphological valley feature is constructed using a path optimization routine that utilizes deviation from the assigned electrical conductivities as the cost function. Our resulting map represents a bedrock surface of unprecedented detail with more

Carrier Propagation Dependence on Applied Potentials in Pentacene Organic Field Effect Transistors Investigated by Impedance Spectroscopy and Electrical Time-of-Flight Techniques

NASA Astrophysics Data System (ADS)

Lin, Jack; Weis, Martin; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2011-04-01

Transient measurements of impedance spectroscopy and electrical time-of-flight (TOF) techniques were used for the evaluation of carrier propagation dependence on applied potentials in a pentacene organic field effect transistor (OFET). These techniques are based on carrier propagation, thus isolates the effect of charge density. The intrinsic mobility which is free from contact resistance effects was obtained by measurement of various channel lengths. The obtained intrinsic mobility shows good correspondence with steady-state current-voltage measurement's saturation mobility. However, their power law relations on mobility vs applied potential resulted in different exponents, suggesting different carrier propagation mechanisms, which is attributable to filling of traps or space charge field in the channel region. The hypothesis was verified by a modified electrical TOF experiment which demonstrated how the accumulated charges in the channel influence the effective mobility.

Control of Exciton Valley Coherence in Transition Metal Dichalcogenide Monolayers

NASA Astrophysics Data System (ADS)

Wang, Gang

Current research on Transition Metal Dichalcogenide (TMD) Monolayers is stimulated by their strong light-matter interaction and the possibility to use the valley index in addition to spin as an information carrier. The direct gap interband transitions in TMD monolayers are governed by chiral optical selection rules. Determined by laser helicity, optical transitions in either the K+ or K- valley in momentum space are induced. Very recently the optical generation of valley polarization and valley coherence (coherent superposition of valley states) have been reported. In this work we go a step further by discussing the coherent manipulation of valley states. Linearly polarized laser excitation prepares a coherent superposition of valley states. We demonstrate the control of the exciton valley coherence in monolayer WSe2 by tuning the applied magnetic field perpendicular to the monolayer plane. The induced valley Zeeman splitting between K+ and K- results in a change of the oscillation frequency of the superposition of the valley states, which corresponds to a rotation of the exciton valley pseudo-spin. We show rotation of this coherent superposition of valley states by angles as large as 30 degrees in applied fields up to 9T and discuss valley coherence in other TMD monolayer materials. This exciton valley coherence control on ps time scale could be an important step towards complete control of qubits based on the valley degree of freedom. In collaboration with X. Marie, T. Amand, C. Robert, F. Cadiz, P. Renucci, B. Urbaszek (Université de Toulouse, INSA-CNRS-UPS, LPCNO, France), B. L. Liu (Institute of Physics, Chinese Academy of Sciences, China) and we acknowledge ERC Grant No. 306719.

Multipactor susceptibility on a dielectric with two carrier frequencies

NASA Astrophysics Data System (ADS)

Iqbal, Asif; Verboncoeur, John; Zhang, Peng

2018-04-01

This work investigates multipactor discharge on a single dielectric surface with two carrier frequencies of an rf electric field. We use Monte Carlo simulations and analytical calculations to obtain susceptibility diagrams in terms of the rf electric field and normal electric field due to the residual charge on the dielectric. It is found that in contrast to the single frequency case, in general, the presence of a second carrier frequency of the rf electric field increases the threshold of the magnitude of the rf electric field to initiate multipactor. The effects of the relative strength and phase, and the frequency separation of the two carrier frequencies are examined. The conditions to minimize mulitpactor are derived.

Energy Band Gap Dependence of Valley Polarization of the Hexagonal Lattice

NASA Astrophysics Data System (ADS)

Ghalamkari, Kazu; Tatsumi, Yuki; Saito, Riichiro

2018-02-01

The origin of valley polarization of the hexagonal lattice is analytically discussed by tight binding method as a function of energy band gap. When the energy gap decreases to zero, the intensity of optical absorption becomes sharp as a function of k near the K (or K') point in the hexagonal Brillouin zone, while the peak intensity at the K (or K') point keeps constant with decreasing the energy gap. When the dipole vector as a function of k can have both real and imaginary parts that are perpendicular to each other in the k space, the valley polarization occurs. When the dipole vector has only real values by selecting a proper phase of wave functions, the valley polarization does not occur. The degree of the valley polarization may show a discrete change that can be relaxed to a continuous change of the degree of valley polarization when we consider the life time of photo-excited carrier.

Valley Hall effect and Nernst effect in strain engineered graphene

NASA Astrophysics Data System (ADS)

Niu, Zhi Ping; Yao, Jian-ming

2018-04-01

We theoretically predict the existence of tunneling valley Hall effect and Nernst effect in the normal/strain/normal graphene junctions, where a strained graphene is sandwiched by two normal graphene electrodes. By applying an electric bias a pure transverse valley Hall current with longitudinal charge current is generated. If the system is driven by a temperature bias, a valley Nernst effect is observed, where a pure transverse valley current without charge current propagates. Furthermore, the transverse valley current can be modulated by the Fermi energy and crystallographic orientation. When the magnetic field is further considered, we obtain a fully valley-polarized current. It is expected these features may be helpful in the design of the controllable valleytronic devices.

Imaging of pure spin-valley diffusion current in WS2-WSe2 heterostructures.

PubMed

Jin, Chenhao; Kim, Jonghwan; Utama, M Iqbal Bakti; Regan, Emma C; Kleemann, Hans; Cai, Hui; Shen, Yuxia; Shinner, Matthew James; Sengupta, Arjun; Watanabe, Kenji; Taniguchi, Takashi; Tongay, Sefaattin; Zettl, Alex; Wang, Feng

2018-05-25

Transition metal dichalcogenide (TMDC) materials are promising for spintronic and valleytronic applications because valley-polarized excitations can be generated and manipulated with circularly polarized photons and the valley and spin degrees of freedom are locked by strong spin-orbital interactions. In this study we demonstrate efficient generation of a pure and locked spin-valley diffusion current in tungsten disulfide (WS 2 )-tungsten diselenide (WSe 2 ) heterostructures without any driving electric field. We imaged the propagation of valley current in real time and space by pump-probe spectroscopy. The valley current in the heterostructures can live for more than 20 microseconds and propagate over 20 micrometers; both the lifetime and the diffusion length can be controlled through electrostatic gating. The high-efficiency and electric-field-free generation of a locked spin-valley current in TMDC heterostructures holds promise for applications in spin and valley devices. Copyright © 2018 The Authors, some rights reserved; exclusive licensee American Association for the Advancement of Science. No claim to original U.S. Government Works.

Ab Initio Calculations of Ultrashort Carrier Dynamics in Two-Dimensional Materials: Valley Depolarization in Single-Layer WSe2

NASA Astrophysics Data System (ADS)

Molina-Sánchez, Alejandro; Sangalli, Davide; Wirtz, Ludger; Marini, Andrea

2017-08-01

In single-layer WSe$_2$, a paradigmatic semiconducting transition metal dichalcogenide, a circularly polarized laser field can selectively excite electronic transitions in one of the inequivalent $K^{\\pm}$ valleys. Such selective valley population corresponds to a pseudospin polarization. This can be used as a degree of freedom in a valleytronic device provided that the time scale for its depolarization is sufficiently large. Yet, the mechanism behind the valley depolarization still remains heavily debated. Recent time-dependent Kerr experiments have provided an accurate way to visualize the valley dynamics by measuring the rotation of a linearly polarized probe pulse applied after a circularly polarized pump pulse. We present here a clear, accurate and parameter-free description of the valley dynamics. By using an atomistic, ab initio, approach we fully disclose the elemental mechanisms that dictate the depolarization effects. Our results are in excellent agreement with recent time-dependent Kerr experiments. We explain the Kerr dynamics and its temperature dependence in terms of electron-phonon mediated processes that induce spin-flip inter-valley transitions.

Epitaxial Single-Layer MoS2 on GaN with Enhanced Valley Helicity.

PubMed

Wan, Yi; Xiao, Jun; Li, Jingzhen; Fang, Xin; Zhang, Kun; Fu, Lei; Li, Pan; Song, Zhigang; Zhang, Hui; Wang, Yilun; Zhao, Mervin; Lu, Jing; Tang, Ning; Ran, Guangzhao; Zhang, Xiang; Ye, Yu; Dai, Lun

2018-02-01

Engineering the substrate of 2D transition metal dichalcogenides can couple the quasiparticle interaction between the 2D material and substrate, providing an additional route to realize conceptual quantum phenomena and novel device functionalities, such as realization of a 12-time increased valley spitting in single-layer WSe 2 through the interfacial magnetic exchange field from a ferromagnetic EuS substrate, and band-to-band tunnel field-effect transistors with a subthreshold swing below 60 mV dec -1 at room temperature based on bilayer n-MoS 2 and heavily doped p-germanium, etc. Here, it is demonstrated that epitaxially grown single-layer MoS 2 on a lattice-matched GaN substrate, possessing a type-I band alignment, exhibits strong substrate-induced interactions. The phonons in GaN quickly dissipate the energy of photogenerated carriers through electron-phonon interaction, resulting in a short exciton lifetime in the MoS 2 /GaN heterostructure. This interaction enables an enhanced valley helicity at room temperature (0.33 ± 0.05) observed in both steady-state and time-resolved circularly polarized photoluminescence measurements. The findings highlight the importance of substrate engineering for modulating the intrinsic valley carriers in ultrathin 2D materials and potentially open new paths for valleytronics and valley-optoelectronic device applications. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deep electrical investigations in the Long Valley geothermal area, California

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stanley, W.D.; Jackson, D.B.; Zohdy, A.A.R.

1976-02-10

Direct current resistivity and time domain electromagnetic techniques were used to study the electrical structure of the Long Valley geothermal area. A resistivity map was compiled from 375 total field resistivity measurements. Two significant zones of low resistivity were detected, one near Casa Diablo Hot Springs and one surrounding the Cashbaugh Ranch-Whitmore Hot Springs area. These anomalies and other parts of the caldera were investigated in detail with 49 Schlumberger dc soundings and 13 transient electromagnetic soundings. An extensive conductive zone of 1- to 10-..cap omega..m resistivity was found to be the cause of the total field resistivity lows. Drillmore » hole information indicates that the shallow parts of the conductive zone in the eastern part of the caldera contain water of only 73/sup 0/C and consist of highly zeolitized tuffs and ashes in the places that were tested. A deeper zone near Whitmore Hot Springs is somewhat more promising in potential for hot water, but owing to the extensive alteration prevalent in the caldera the presence of hot water cannot be definitely assumed. The resistivity results indicate that most of the past hydrothermal activity, and probably most of the present activity, is controlled by fracture systems related to regional Sierran faulting.« less

CARRIER/CASK HANDLING SYSTEM DESCRIPTION DOCUMENT

DOE Office of Scientific and Technical Information (OSTI.GOV)

E.F. Loros

2000-06-23

building structures and space allocations. The Carrier/Cask Handling System interfaces with the Waste Handling Building Electrical System for electrical power.« less

Study of carrier energetics in ITO/P(VDF-TrFE)/pentacene/Au diode by using electric-field-induced optical second harmonic generation measurement and charge modulation spectroscopy

NASA Astrophysics Data System (ADS)

Otsuka, Takako; Taguchi, Dai; Manaka, Takaaki; Iwamoto, Mitsumasa

2017-02-01

By using electric-field-induced optical second harmonic generation (EFISHG) measurement and charge modulation spectroscopy (CMS), we studied carrier behavior and polarization reversal in ITO/ poly(vinylidene fluoride trifluoroethylene) (P(VDF-TrFE))/pentacene/Au diodes with a ferroelectric P(VDF-TrFE) layer in terms of carrier energetics. The current-voltage (I-V) characteristics of the diodes showed three-step polarization reversal in the dark. However, the I-V was totally different under illumination and exhibited two-step behavior. EFISHG probed the internal electric field in the pentacene layer and accounted for the polarization reversal change due to charge accumulation at the pentacene/P(VDF-TrFE) interface. CMS probed the related carrier energetics and indicated that exciton dissociation in pentacene molecular states governed carrier accumulation at the pentacene/ferroelectric interface, leading to different polarization reversal processes in the dark and under light illumination. Combining EFISHG measurement and CMS provides us a way to study carrier energetics that govern polarization reversal in ferroelectric P(VDF-TrFE)/pentacene diodes.

Valley magnetoelectricity in single-layer MoS2

NASA Astrophysics Data System (ADS)

Lee, Jieun; Wang, Zefang; Xie, Hongchao; Mak, Kin Fai; Shan, Jie

2017-09-01

The magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on the control of the electron spin degree of freedom (DOF) in materials such as multiferroics and conventional semiconductors. Here, we report a new form of the ME effect based on the valley DOF in two-dimensional Dirac materials. By breaking the three-fold rotational symmetry in single-layer MoS 2 via a uniaxial stress, we have demonstrated the pure electrical generation of valley magnetization in this material, and its direct imaging by Kerr rotation microscopy. The observed out-of-plane magnetization is independent of in-plane magnetic field, linearly proportional to the in-plane current density, and optimized when the current is orthogonal to the strain-induced piezoelectric field. These results are fully consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects. Furthermore, the effect persists at room temperature, opening possibilities for practical valleytronic devices.

Valley magnetoelectricity in single-layer MoS2.

PubMed

Lee, Jieun; Wang, Zefang; Xie, Hongchao; Mak, Kin Fai; Shan, Jie

2017-09-01

The magnetoelectric (ME) effect, the phenomenon of inducing magnetization by application of an electric field or vice versa, holds great promise for magnetic sensing and switching applications. Studies of the ME effect have so far focused on the control of the electron spin degree of freedom (DOF) in materials such as multiferroics and conventional semiconductors. Here, we report a new form of the ME effect based on the valley DOF in two-dimensional Dirac materials. By breaking the three-fold rotational symmetry in single-layer MoS 2 via a uniaxial stress, we have demonstrated the pure electrical generation of valley magnetization in this material, and its direct imaging by Kerr rotation microscopy. The observed out-of-plane magnetization is independent of in-plane magnetic field, linearly proportional to the in-plane current density, and optimized when the current is orthogonal to the strain-induced piezoelectric field. These results are fully consistent with a theoretical model of valley magnetoelectricity driven by Berry curvature effects. Furthermore, the effect persists at room temperature, opening possibilities for practical valleytronic devices.

Spin- and Valley-Dependent Electronic Structure in Silicene Under Periodic Potentials

NASA Astrophysics Data System (ADS)

Lu, Wei-Tao; Li, Yun-Fang; Tian, Hong-Yu

2018-03-01

We study the spin- and valley-dependent energy band and transport property of silicene under a periodic potential, where both spin and valley degeneracies are lifted. It is found that the Dirac point, miniband, band gap, anisotropic velocity, and conductance strongly depend on the spin and valley indices. The extra Dirac points appear as the voltage potential increases, the critical values of which are different for electron with different spins and valleys. Interestingly, the velocity is greatly suppressed due to the electric field and exchange field, other than the gapless graphene. It is possible to achieve an excellent collimation effect for a specific spin near a specific valley. The spin- and valley-dependent band structure can be used to adjust the transport, and perfect transmissions are observed at Dirac points. Therefore, a remarkable spin and valley polarization is achieved which can be switched effectively by the structural parameters. Importantly, the spin and valley polarizations are greatly enhanced by the disorder of the periodic potential.

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric

PubMed Central

Fujii, Mami N.; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

2015-01-01

The use of indium–gallium–zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic–inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic–inorganic hybrid devices. PMID:26677773

High-density carrier-accumulated and electrically stable oxide thin-film transistors from ion-gel gate dielectric.

PubMed

Fujii, Mami N; Ishikawa, Yasuaki; Miwa, Kazumoto; Okada, Hiromi; Uraoka, Yukiharu; Ono, Shimpei

2015-12-18

The use of indium-gallium-zinc oxide (IGZO) has paved the way for high-resolution uniform displays or integrated circuits with transparent and flexible devices. However, achieving highly reliable devices that use IGZO for low-temperature processes remains a technological challenge. We propose the use of IGZO thin-film transistors (TFTs) with an ionic-liquid gate dielectric in order to achieve high-density carrier-accumulated IGZO TFTs with high reliability, and we discuss a distinctive mechanism for the degradation of this organic-inorganic hybrid device under long-term electrical stress. Our results demonstrated that an ionic liquid or gel gate dielectric provides highly reliable and low-voltage operation with IGZO TFTs. Furthermore, high-density carrier accumulation helps improve the TFT characteristics and reliability, and it is highly relevant to the electronic phase control of oxide materials and the degradation mechanism for organic-inorganic hybrid devices.

Valley dependent g-factor anisotropy in Silicon quantum dots

NASA Astrophysics Data System (ADS)

Ferdous, Rifat; Kawakami, Erika; Scarlino, Pasquale; Nowak, Michal; Klimeck, Gerhard; Friesen, Mark; Coppersmith, Susan N.; Eriksson, Mark A.; Vandersypen, Lieven M. K.; Rahman, Rajib

Silicon (Si) quantum dots (QD) provide a promising platform for a spin based quantum computer, because of the exceptionally long spin coherence times in Si and the existing industrial infrastructure. Due to the presence of an interface and a vertical electric field, the two lowest energy states of a Si QD are primarily composed of two conduction band valleys. Confinement by the interface and the E-field not only affect the charge properties of these states, but also their spin properties through the spin-orbit interaction (SO), which differs significantly from the SO in bulk Si. Recent experiments have found that the g-factors of these states are different and dependent on the direction of the B-field. Using an atomistic tight-binding model, we investigate the electric and magnetic field dependence of the electron g-factor of the valley states in a Si QD. We find that the g-factors are valley dependent and show 180-degree periodicity as a function of an in-plane magnetic field orientation. However, atomic scale roughness can strongly affect the anisotropic g-factors. Our study helps to reconcile disparate experimental observations and to achieve better external control over electron spins in Si QD, by electric and magnetic fields.

Carrier-dependent magnetic anisotropy of cobalt doped titanium dioxide

PubMed Central

Shao, Bin; Feng, Min; Zuo, Xu

2014-01-01

Using first-principles calculations, we predict that the magnetic anisotropy energy of Co-doped TiO2 sensitively depends on carrier accumulation. This magnetoelectric phenomenon provides a potential route to a direct manipulation of the magnetization direction in diluted magnetic semiconductor by external electric-fields. We calculate the band structures and reveal the origin of the carrier-dependent magnetic anisotropy energy in k-space. It is shown that the carrier accumulation shifts the Fermi energy, and consequently, regulates the competing contributions to the magnetic anisotropy energy. The calculations provide an insight to understanding this magnetoelectric phenomenon, and a straightforward way to search prospective materials for electrically controllable spin direction of carriers. PMID:25510846

Ultrafast electron dynamics reveal the high potential of InSe for hot-carrier optoelectronics

NASA Astrophysics Data System (ADS)

Chen, Zhesheng; Giorgetti, Christine; Sjakste, Jelena; Cabouat, Raphael; Véniard, Valérie; Zhang, Zailan; Taleb-Ibrahimi, Amina; Papalazarou, Evangelos; Marsi, Marino; Shukla, Abhay; Peretti, Jacques; Perfetti, Luca

2018-06-01

We monitor the dynamics of hot carriers in InSe by means of two-photon photoelectron spectroscopy (2PPE). The electrons excited by photons of 3.12 eV experience a manifold relaxation. First, they thermalize to electronic states degenerate with the M ¯ valley. Subsequently, the electronic cooling is dictated by Fröhlich coupling with phonons of small momentum transfer. Ab initio calculations predict cooling rates that are in good agreement with the observed dynamics. We argue that electrons accumulating in states degenerate with the M ¯ valley could travel through a multilayer flake of InSe with a lateral size of 1 μ m . The hot carriers pave a viable route to the realization of below-band-gap photodiodes and Gunn oscillators. Our results indicate that these technologies may find a natural implementation in future devices based on layered chalcogenides.

Optically adjustable valley Hall current in single-layer transition metal dichalcogenides

NASA Astrophysics Data System (ADS)

Sengupta, Parijat; Pavlidis, Dimitris; Shi, Junxia

2018-02-01

The illumination of a single-layer transition metal dichalcogenide with an elliptically polarized light beam is shown to give rise to a differential rate of inter-band carrier excitation between the valence and conduction states around the valley edges, K and K' . This rate with a linear dependence on the beam ellipticity and inverse of the optical gap manifests as an asymmetric Fermi distribution between the valleys or a non-equilibrium population which under an external field and a Berry curvature induced anomalous velocity, results in an externally tunable finite valley Hall current. Surface imperfections that influence the excitation rates are included through the self-consistent Born approximation. Further, we describe applications centered around circular dichroism, quantum computing, and spin torque via optically excited spin currents within the framework of the suggested formalism. A closing summary points to the possibility of extending the calculations to composite charged particles like trions. The role of the substrate in renormalizing the fundamental band gap and moderating the valley Hall current is also discussed.

Conduction-band valley spin splitting in single-layer H-T l2O

NASA Astrophysics Data System (ADS)

Ma, Yandong; Kou, Liangzhi; Du, Aijun; Huang, Baibiao; Dai, Ying; Heine, Thomas

2018-02-01

Despite numerous studies, coupled spin and valley physics is currently limited to two-dimensional (2D) transition-metal dichalcogenides (TMDCs). Here, we predict an exceptional 2D valleytronic material associated with the spin-valley coupling phenomena beyond 2D TMDCs—single-layer (SL) H-T l2O . It displays large valley spin splitting (VSS), significantly larger than that of 2D TMDCs, and a finite band gap, which are both critically attractive for the integration of valleytronics and spintronics. More importantly, in sharp contrast to all the experimentally confirmed 2D valleytronic materials, where the strong valence-band VSS (0.15-0.46 eV) supports the spin-valley coupling, the VSS in SL H-T l2O is pronounced in its conduction band (0.61 eV), but negligibly small in its valence band (21 meV), thus opening a way for manipulating the coupled spin and valley physics. Moreover, SL H-T l2O possesses extremely high carrier mobility, as large as 9.8 ×103c m2V-1s-1 .

Large magnetoresistance dips and perfect spin-valley filter induced by topological phase transitions in silicene

NASA Astrophysics Data System (ADS)

Prarokijjak, Worasak; Soodchomshom, Bumned

2018-04-01

Spin-valley transport and magnetoresistance are investigated in silicene-based N/TB/N/TB/N junction where N and TB are normal silicene and topological barriers. The topological phase transitions in TB's are controlled by electric, exchange fields and circularly polarized light. As a result, we find that by applying electric and exchange fields, four groups of spin-valley currents are perfectly filtered, directly induced by topological phase transitions. Control of currents, carried by single, double and triple channels of spin-valley electrons in silicene junction, may be achievable by adjusting magnitudes of electric, exchange fields and circularly polarized light. We may identify that the key factor behind the spin-valley current filtered at the transition points may be due to zero and non-zero Chern numbers. Electrons that are allowed to transport at the transition points must obey zero-Chern number which is equivalent to zero mass and zero-Berry's curvature, while electrons with non-zero Chern number are perfectly suppressed. Very large magnetoresistance dips are found directly induced by topological phase transition points. Our study also discusses the effect of spin-valley dependent Hall conductivity at the transition points on ballistic transport and reveals the potential of silicene as a topological material for spin-valleytronics.

Hot Carriers in Semiconductors 6, Scottsdale, Arizona

DTIC Science & Technology

1989-11-01

34Autosolitons in electron-hole plasma weakly heated by an electric field," M. N. IVinosiavskii, B. S. Kerner, V V. Osipov, and C. G. Sarbei, Kiev I TuP...neasur d at 0.3 K was In a many-valley semiconductor subject to an electric found to decrease with increasing input power , which field strength above a...work was supported by the Air Force Office of with the heating of an electron gas, e.g., by electric Scientific Research, the U. S. Army Research Office

Many-body effects in valleytronics: direct measurement of valley lifetimes in single-layer MoS2.

PubMed

Mai, Cong; Barrette, Andrew; Yu, Yifei; Semenov, Yuriy G; Kim, Ki Wook; Cao, Linyou; Gundogdu, Kenan

2014-01-08

Single layer MoS2 is an ideal material for the emerging field of "valleytronics" in which charge carrier momentum can be finely controlled by optical excitation. This system is also known to exhibit strong many-body interactions as observed by tightly bound excitons and trions. Here we report direct measurements of valley relaxation dynamics in single layer MoS2, by using ultrafast transient absorption spectroscopy. Our results show that strong Coulomb interactions significantly impact valley population dynamics. Initial excitation by circularly polarized light creates electron-hole pairs within the K-valley. These excitons coherently couple to dark intervalley excitonic states, which facilitate fast electron valley depolarization. Hole valley relaxation is delayed up to about 10 ps due to nondegeneracy of the valence band spin states. Intervalley biexciton formation reveals the hole valley relaxation dynamics. We observe that biexcitons form with more than an order of magnitude larger binding energy compared to conventional semiconductors. These measurements provide significant insight into valley specific processes in 2D semiconductors. Hence they could be used to suggest routes to design semiconducting materials that enable control of valley polarization.

Carrier trajectory tracking equations for Simple-band Monte Carlo simulation of avalanche multiplication processes

NASA Astrophysics Data System (ADS)

Ong, J. S. L.; Charin, C.; Leong, J. H.

2017-12-01

Avalanche photodiodes (APDs) with steep electric field gradients generally have low excess noise that arises from carrier multiplication within the internal gain of the devices, and the Monte Carlo (MC) method is among popular device simulation tools for such devices. However, there are few articles relating to carrier trajectory modeling in MC models for such devices. In this work, a set of electric-field-gradient-dependent carrier trajectory tracking equations are developed and used to update the positions of carriers along the path during Simple-band Monte Carlo (SMC) simulations of APDs with non-uniform electric fields. The mean gain and excess noise results obtained from the SMC model employing these equations show good agreement with the results reported for a series of silicon diodes, including a p+n diode with steep electric field gradients. These results confirm the validity and demonstrate the feasibility of the trajectory tracking equations applied in SMC models for simulating mean gain and excess noise in APDs with non-uniform electric fields. Also, the simulation results of mean gain, excess noise, and carrier ionization positions obtained from the SMC model of this work agree well with those of the conventional SMC model employing the concept of a uniform electric field within a carrier free-flight. These results demonstrate that the electric field variation within a carrier free-flight has an insignificant effect on the predicted mean gain and excess noise results. Therefore, both the SMC model of this work and the conventional SMC model can be used to predict the mean gain and excess noise in APDs with highly non-uniform electric fields.

Large valley splitting in monolayer WS2 by proximity coupling to an insulating antiferromagnetic substrate

NASA Astrophysics Data System (ADS)

Xu, Lei; Yang, Ming; Shen, Lei; Zhou, Jun; Zhu, Tao; Feng, Yuan Ping

2018-01-01

Lifting the valley degeneracy is an efficient way to achieve valley polarization for further valleytronics operations. In this Rapid Communication, we demonstrate that a large valley splitting can be obtained in monolayer transition metal dichalcogenides by magnetic proximity coupling to an insulating antiferromagnetic substrate. As an example, we perform first-principles calculations to investigate the electronic structures of monolayer WS2 on the MnO(111) surface. Our calculation results suggest that a large valley splitting of 214 meV, which corresponds to a Zeeman magnetic field of 1516 T, is induced in the valence band of monolayer WS2. The magnitude of valley splitting relies on the strength of interfacial orbital hybridization and can be tuned continually by applying an external out-of-plane pressure and in-plane strain. More interestingly, we find that both spin and valley index will flip when the magnetic ordering of MnO is reversed. Besides, owing to the sizable Berry curvature and time-reversal symmetry breaking in the WS2/MnO heterostructure, a spin- and valley-polarized anomalous Hall current can be generated in the presence of an in-plane electric field, which allows one to detect valleys by the electrical approach. Our results shed light on the realization of valleytronic devices using the antiferromagnetic insulator as the substrate.

Dixie Valley Binary Cycle Production Data 2013 YTD

DOE Data Explorer

Lee, Vitaly

2013-10-18

Proving the technical and economic feasibility of utilizing the available unused heat to generate additional electric power from a binary power plant from the low-temperature brine at the Dixie Valley Geothermal Power Plant. Monthly data for Jan 2013-September 2013

Photo-induced spin and valley-dependent Seebeck effect in the low-buckled Dirac materials

NASA Astrophysics Data System (ADS)

Mohammadi, Yawar

2018-04-01

Employing the Landauer-Buttiker formula we investigate the spin and valley dependence of Seebeck effect in low-buckled Dirac materials (LBDMs), whose band structure are modulated by local application of a gate voltage and off-resonant circularly polarized light. We calculate the charge, spin and valley Seebeck coefficients of an irradiated LBDM as functions of electronic doping, light intensity and the amount of the electric field in the linear regime. Our calculation reveal that all Seebeck coefficients always shows an odd features with respect to the chemical potential. Moreover, we show that, due to the strong spin-orbit coupling in the LBDMs, the induced thermovoltage in the irradiated LBDMs is spin polarized, and can also become valley polarized if the gate voltage is applied too. It is also found that the valley (spin) polarization of the induced thermovoltage could be inverted by reversing the circular polarization of light or reversing the direction the electric field (only by reversing the circular polarization of light).

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

NASA Astrophysics Data System (ADS)

Feng, Shih-Wei; Liao, Po-Hsun; Leung, Benjamin; Han, Jung; Yang, Fann-Wei; Wang, Hsiang-Chen

2015-07-01

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantages of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.

Efficient carrier relaxation and fast carrier recombination of N-polar InGaN/GaN light emitting diodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Shih-Wei, E-mail: swfeng@nuk.edu.tw; Liao, Po-Hsun; Leung, Benjamin

2015-07-28

Based on quantum efficiency and time-resolved electroluminescence measurements, the effects of carrier localization and quantum-confined Stark effect (QCSE) on carrier transport and recombination dynamics of Ga- and N-polar InGaN/GaN light-emitting diodes (LEDs) are reported. The N-polar LED exhibits shorter ns-scale response, rising, delay, and recombination times than the Ga-polar one does. Stronger carrier localization and the combined effects of suppressed QCSE and electric field and lower potential barrier acting upon the forward bias in an N-polar LED provide the advantages of more efficient carrier relaxation and faster carrier recombination. By optimizing growth conditions to enhance the radiative recombination, the advantagesmore » of more efficient carrier relaxation and faster carrier recombination in a competitive performance N-polar LED can be realized for applications of high-speed flash LEDs. The research results provide important information for carrier transport and recombination dynamics of an N-polar InGaN/GaN LED.« less

Magnetic field induced strong valley polarization in the three-dimensional topological semimetal LaBi

NASA Astrophysics Data System (ADS)

Kumar, Nitesh; Shekhar, Chandra; Klotz, J.; Wosnitza, J.; Felser, Claudia

2017-10-01

LaBi is a three-dimensional rocksalt-type material with a surprisingly quasi-two-dimensional electronic structure. It exhibits excellent electronic properties such as the existence of nontrivial Dirac cones, extremely large magnetoresistance, and high charge-carrier mobility. The cigar-shaped electron valleys make the charge transport highly anisotropic when the magnetic field is varied from one crystallographic axis to another. We show that the electrons can be polarized effectively in these electron valleys under a rotating magnetic field. We achieved a polarization of 60% at 2 K despite the coexistence of three-dimensional hole pockets. The valley polarization in LaBi is compared to the sister compound LaSb where it is found to be smaller. The performance of LaBi is comparable to the highly efficient bismuth.

Carrier separation and transport in perovskite solar cells studied by nanometre-scale profiling of electrical potential

PubMed Central

Jiang, Chun-Sheng; Yang, Mengjin; Zhou, Yuanyuan; To, Bobby; Nanayakkara, Sanjini U.; Luther, Joseph M.; Zhou, Weilie; Berry, Joseph J.; van de Lagemaat, Jao; Padture, Nitin P.; Zhu, Kai; Al-Jassim, Mowafak M.

2015-01-01

Organometal–halide perovskite solar cells have greatly improved in just a few years to a power conversion efficiency exceeding 20%. This technology shows unprecedented promise for terawatt-scale deployment of solar energy because of its low-cost, solution-based processing and earth-abundant materials. We have studied charge separation and transport in perovskite solar cells—which are the fundamental mechanisms of device operation and critical factors for power output—by determining the junction structure across the device using the nanoelectrical characterization technique of Kelvin probe force microscopy. The distribution of electrical potential across both planar and porous devices demonstrates p–n junction structure at the TiO2/perovskite interfaces and minority-carrier diffusion/drift operation of the devices, rather than the operation mechanism of either an excitonic cell or a p-i-n structure. Combining the potential profiling results with solar cell performance parameters measured on optimized and thickened devices, we find that carrier mobility is a main factor that needs to be improved for further gains in efficiency of the perovskite solar cells. PMID:26411597

Carrier Separation and Transport in Perovskite Solar Cells Studied by Nanometre-Scale Profiling of Electrical Potential

DOE PAGES

Jiang, Chun-Sheng; Yang, Mengjin; Zhou, Yuanyuan; ...

2015-09-28

Organometal–halide perovskite solar cells have greatly improved in just a few years to a power conversion efficiency exceeding 20%. This technology shows unprecedented promise for terawatt-scale deployment of solar energy because of its low-cost, solution-based processing and earth-abundant materials. We have studied charge separation and transport in perovskite solar cells—which are the fundamental mechanisms of device operation and critical factors for power output—by determining the junction structure across the device using the nanoelectrical characterization technique of Kelvin probe force microscopy. Moreover, the distribution of electrical potential across both planar and porous devices demonstrates p–n junction structure at the TiO2/perovskite interfacesmore » and minority-carrier diffusion/drift operation of the devices, rather than the operation mechanism of either an excitonic cell or a p-i-n structure. When we combined the potential profiling results with solar cell performance parameters measured on optimized and thickened devices, we find that carrier mobility is a main factor that needs to be improved for further gains in efficiency of the perovskite solar cells.« less

Recovery Act:Rural Cooperative Geothermal development Electric & Agriculture

DOE Office of Scientific and Technical Information (OSTI.GOV)

Culp, Elzie Lynn

Surprise Valley Electric, a small rural electric cooperative serving northeast California and southern Oregon, developed a 3mw binary geothermal electric generating plant on a cooperative member's ranch. The geothermal resource had been discovered in 1980 when the ranch was developing supplemental irrigation water wells. The 240°F resource was used for irrigation until developed through this project for generation of electricity. A portion of the spent geothermal fluid is now used for irrigation in season and is available for other purposes, such as greenhouse agriculture, aquaculture and direct heating of community buildings. Surprise Valley Electric describes many of the challenges amore » small rural electric cooperative encountered and managed to develop a geothermal generating plant.« less

Carrier frequency offset estimation for an acoustic-electric channel using 16 QAM modulation

NASA Astrophysics Data System (ADS)

Cunningham, Michael T.; Anderson, Leonard A.; Wilt, Kyle R.; Chakraborty, Soumya; Saulnier, Gary J.; Scarton, Henry A.

2016-05-01

Acoustic-electric channels can be used to send data through metallic barriers, enabling communications where electromagnetic signals are ineffective. This paper considers an acoustic-electric channel that is formed by mounting piezoelectric transducers on metallic barriers that are separated by a thin water layer. The transducers are coupled to the barriers using epoxy and the barriers are positioned to axially-align the PZTs, maximizing energy transfer efficiency. The electrical signals are converted by the transmitting transducers into acoustic waves, which propagate through the elastic walls and water medium to the receiving transducers. The reverberation of the acoustic signals in these channels can produce multipath distortion with a significant delay spread that introduces inter-symbol interference (ISI) into the received signal. While the multipath effects can be severe, the channel does not change rapidly which makes equalization easier. Here we implement a 16-QAM system on this channel, including a method for obtaining accurate carrier frequency offset (CFO) estimates in the presence of the quasi-static multipath propagation. A raised-power approach is considered but found to suffer from excessive data noise resulting from the ISI. An alternative approach that utilizes a pilot tone burst at the start of a data packet is used for CFO estimation and found to be effective. The autocorrelation method is used to estimate the frequency of the received burst. A real-time prototype of the 16 QAM system that uses a Texas Instruments MSP430 microcontroller-based transmitter and a personal computer-based receiver is presented along with performance results.

Electric Properties of Obsidian: Evidence for Positive Hole Charge Carriers

NASA Astrophysics Data System (ADS)

Nordvik, R.; Freund, F. T.

2012-12-01

The blackness of obsidian is due to the presence of oxygen anions in the valence state 1-, creating broad energy levels at the upper edge of the valence band, which absorb visible light over a wide spectral range. These energy states are associated with defect electrons in the oxygen anion sublattice, well-known from "smoky quartz", where Al substituting for Si captures a defect electron in the oxygen anion sublattice for charge compensation [1]. Such defect electrons, also known as positive holes, are responsible for the increase in electrical conductivity in igneous rocks when uniaxial stresses are applied, causing the break-up of pre-existing peroxy defects, Si-OO-Si [2]. Peroxy defects in obsidian cannot be so easily activated by mechanical stress because the glassy matrix will break before sufficiently high stress levels can be reached. If peroxy defects do exist, however, they can be studied by activating them thermally [3]. We describe experiments with rectangular slabs of obsidian with Au electrodes at both ends. Upon heating one end, we observe (i) a thermopotential and (ii) a thermocurrent developing at distinct temperatures around 250°C and 450°C, marking the 2-step break-up of peroxy bonds. [1] Schnadt, R., and Schneider, J.: The electronic structure of the trapped-hole center in smoky quartz, Zeitschrift Physik B Condensed Matter 11, 19-42, 1970. [2] Freund, F. T., Takeuchi, A., and Lau, B. W.: Electric currents streaming out of stressed igneous rocks - A step towards understanding pre-earthquake low frequency EM emissions, Physics and Chemistry of the Earth, 31, 389-396, 2006. [3] Freund, F., and Masuda, M. M.: Highly mobile oxygen hole-type charge carriers in fused silica, Journal Material Research, 8, 1619-1622, 1991.

Terahertz radiation from accelerating charge carriers in graphene under ultrafast photoexcitation

NASA Astrophysics Data System (ADS)

Rustagi, Avinash; Stanton, C. J.

2016-11-01

We study the generation of terahertz (THz) radiation from the acceleration of ultrafast photoexcited charge carriers in graphene in the presence of a dc electric field. Our model is based on calculating the transient current density from the time-dependent distribution function which is determined using the Boltzmann transport equation (BTE) within a relaxation time approximation. We include the time-dependent generation of carriers by the pump pulse by solving for the carrier generation rate using the optical Bloch equations in the rotating wave approximation (RWA). The linearly polarized pump pulse generates an anisotropic distribution of photoexcited carriers in the kx-ky plane. The collision integral in the Boltzmann equation includes a term that leads to the thermalization of carriers via carrier-carrier scattering to an effective temperature above the lattice temperature, as well as a cooling term, which leads to energy relaxation via inelastic carrier-phonon scattering. The radiated signal is proportional to the time derivative of the transient current density. In spite of the fact that the magnitude of the velocity is the same for all the carriers in graphene, there is still emitted radiation from the photoexcited charge carriers with frequency components in the THz range due to a change in the direction of velocity of the photoexcited carriers in the external electric field as well as cooling of the photoexcited carriers on a subpicosecond time scale.

Carrier doping into a superconducting BaPb0.7Bi0.3O3‑δ epitaxial film using an electric double-layer transistor structure

NASA Astrophysics Data System (ADS)

Komori, S.; Kakeya, I.

2018-06-01

Doping evolution of the unconventional superconducting properties in BaBiO3-based compounds has yet to be clarified in detail due to the significant change of the oxygen concentration accompanied by the chemical substitution. We suggest that the carrier concentration of an unconventional superconductor, BaPb0.7Bi0.3O3‑δ , is controllable without inducing chemical or structural changes using an electric double-layer transistor structure. The critical temperature is found to decrease systematically with increasing carrier concentration.

47 CFR 15.113 - Power line carrier systems.

Code of Federal Regulations, 2012 CFR

2012-10-01

...-interference basis in accordance with § 15.5 of this part. If harmful interference occurs, the electric power... frequencies. (e) Power line carrier system apparatus shall conform to such engineering standards as may be... 47 Telecommunication 1 2012-10-01 2012-10-01 false Power line carrier systems. 15.113 Section 15...

Probing long-range carrier-pair spin–spin interactions in a conjugated polymer by detuning of electrically detected spin beating

PubMed Central

van Schooten, Kipp J.; Baird, Douglas L.; Limes, Mark E.; Lupton, John M.; Boehme, Christoph

2015-01-01

Weakly coupled electron spin pairs that experience weak spin–orbit interaction can control electronic transitions in molecular and solid-state systems. Known to determine radical pair reactions, they have been invoked to explain phenomena ranging from avian magnetoreception to spin-dependent charge-carrier recombination and transport. Spin pairs exhibit persistent spin coherence, allowing minute magnetic fields to perturb spin precession and thus recombination rates and photoreaction yields, giving rise to a range of magneto-optoelectronic effects in devices. Little is known, however, about interparticle magnetic interactions within such pairs. Here we present pulsed electrically detected electron spin resonance experiments on poly(styrene-sulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) devices, which show how interparticle spin–spin interactions (magnetic-dipolar and spin-exchange) between charge-carrier spin pairs can be probed through the detuning of spin-Rabi oscillations. The deviation from uncoupled precession frequencies quantifies both the exchange (<30 neV) and dipolar (23.5±1.5 neV) interaction energies responsible for the pair's zero-field splitting, implying quantum mechanical entanglement of charge-carrier spins over distances of 2.1±0.1 nm. PMID:25868686

Probing long-range carrier-pair spin–spin interactions in a conjugated polymer by detuning of electrically detected spin beating

DOE PAGES

van Schooten, Kipp J.; Baird, Douglas L.; Limes, Mark E.; ...

2015-04-14

Here, weakly coupled electron spin pairs that experience weak spin–orbit interaction can control electronic transitions in molecular and solid-state systems. Known to determine radical pair reactions, they have been invoked to explain phenomena ranging from avian magnetoreception to spin-dependent charge-carrier recombination and transport. Spin pairs exhibit persistent spin coherence, allowing minute magnetic fields to perturb spin precession and thus recombination rates and photoreaction yields, giving rise to a range of magneto-optoelectronic effects in devices. Little is known, however, about interparticle magnetic interactions within such pairs. Here we present pulsed electrically detected electron spin resonance experiments on poly(styrene-sulfonate)-doped poly(3,4-ethylenedioxythiophene) (PEDOT:PSS) devices,more » which show how interparticle spin–spin interactions (magnetic-dipolar and spin-exchange) between charge-carrier spin pairs can be probed through the detuning of spin-Rabi oscillations. The deviation from uncoupled precession frequencies quantifies both the exchange (<30 neV) and dipolar (23.5±1.5 neV) interaction energies responsible for the pair’s zero-field splitting, implying quantum mechanical entanglement of charge-carrier spins over distances of 2.1±0.1 nm.« less

Resonant tunneling spectroscopy of valley eigenstates on a donor-quantum dot coupled system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kobayashi, T., E-mail: t.kobayashi@unsw.edu.au; Heijden, J. van der; House, M. G.

We report on electronic transport measurements through a silicon double quantum dot consisting of a donor and a quantum dot. Transport spectra show resonant tunneling peaks involving different valley states, which illustrate the valley splitting in a quantum dot on a Si/SiO{sub 2} interface. The detailed gate bias dependence of double dot transport allows a first direct observation of the valley splitting in the quantum dot, which is controllable between 160 and 240 μeV with an electric field dependence 1.2 ± 0.2 meV/(MV/m). A large valley splitting is an essential requirement for implementing a physical electron spin qubit in a silicon quantum dot.

Pumpernickel Valley Geothermal Project Thermal Gradient Wells

DOE Office of Scientific and Technical Information (OSTI.GOV)

Z. Adam Szybinski

2006-01-01

, PVTG-1, -2, -3, and -4, and all four encountered geothermal fluids. The holes provided valuable water geochemistry, supporting the geothermometry results obtained from the hot springs and Magma well. The temperature data gathered from all the wells clearly indicates the presence of a major plume of thermal water centered on the Pumpernickel Valley fault, and suggests that the main plume is controlled, at least in part, by flow from this fault system. The temperature data also defines the geothermal resource with gradients >100oC/km, which covers an area a minimum of 8 km2. Structural blocks, down dropped with respect to the Pumpernickel Valley fault, may define an immediate reservoir. The geothermal system almost certainly continues beyond the recently drilled holes and might be open to the east and south, whereas the heat source responsible for the temperatures associated with this plume has not been intersected and must be at a depth greater than 920 meters (depth of the deepest well – Magma well). The geological and structural setting and other characteristics of the Pumpernickel Valley geothermal project area are markedly similar to the portions of the nearby Dixie Valley geothermal field. These similarities include, among others, the numerous, unexposed en echelon faults and large-scale pull-apart structure, which in Dixie Valley may host part of the geothermal field. The Pumpernickel Valley project area, for the majority of which Nevada Geothermal Power Company has geothermal rights, represents a geothermal site with a potential for the discovery of a relatively high temperature reservoir suitable for electric power production. Among locations not previously identified as having high geothermal potential, Pumpernickel Valley has been ranked as one of four sites with the highest potential for electrical power production in Nevada (Shevenell and Garside, 2003). Richards and Blackwell (2002) estimated the total heat loss and the preliminary production capacity for

Geophysical reconnaissance of Lemmon Valley, Washoe County, Nevada

USGS Publications Warehouse

Schaefer, Donald H.; Maurer, Douglas K.

1981-01-01

Rapid growth in the Lemmon Valley area, Nevada, during recent years has put increasing importance on knowledge of stored ground water for the valley. Data that would fill voids left by previous studies are depth to bedrock and depth to good-quality water beneath the two playas in the valley. Depths to bedrock calculated from a gravity survey in Lemmon Valley indicate that the western part of Lemmon Valley is considerably deeper than the eastern part. Maximum depth in the western part is about 2 ,600 feet below land surface. This depression approximately underlies the Silver Lake playa. A smaller, shallower depression with a maximum depth of about 1,500 feet below land surface exists about 2.5 miles north of the playa. The eastern area is considerably shallower. The maximum calculated depth to bedrock is about 1,000 feet below land surface, but the depth throughout most the eastern area is only about 400 feet below land surface. An electrical resistivity survey in Lemmon Valley consisting of 10 Schlumberger soundings was conducted around the playas. The maximum depth of poor-quality water (characterized by a resistivity less than 20 ohm-meters) differed considerably from place to place. Maximum depths of poor-quality water beneath the playa east of Stead varied from about 120 feet to almost 570 feet below land surface. At the Silver Lake playa, the maximum depths varied from about 40 feet in the west to 490 feet in the east. (USGS)

Solar Energy within the Central Valley, CA: Current Practices and Potential

NASA Astrophysics Data System (ADS)

Hoffacker, M. K.; Hernandez, R. R.; Allen, M. F.

2015-12-01

Utility-scale solar energy (USSE, ≥ 1 megawatt [MW]) systems are rapidly being deployed in the Central Valley of California, generating clean electricity and new job opportunities. Utility-scale solar energy systems require substantial quantities of land or space, often prompting an evaluation of environmental impacts and trade-offs when selecting their placement. Utilizing salt-contaminated agricultural land (as the sodium absorption and electrical conductivity values are unsuitably high), unsuitable for food production, and lands within the built environment (developed), can serve as a co-benefit opportunity when reclamation of these lands for USSE development is prioritized. In this study, we quantify the theoretical and generation-based solar energy potential for the Central Valley according to land-cover type, crop type, and for salt-contaminated lands. Further, we utilize the Carnegie Energy and Environmental Compatibility (CEEC) model to identify and prioritize solar energy, integrating environmental resource opportunities and constraints most relevant to the Central Valley. We use the CEEC model to generate a value-based environmental compatibility output for the Central Valley. The Central Valley extends across nearly 60,000 km2 of California with the potential of generating 21,800 - 30,300 TWh y-1 and 41,600 TWh y-1 of solar energy for photovoltaic (PV) and concentrating solar power (CSP), respectively. Pasture, hay, and cultivated crops comprise over half of the Central Valley, much of which is considered prime agriculture or of statewide or local importance for farming (28,200 km2). Together, approximately one-third of this region is salt-contaminated (16%) or developed (11%). This confers a generation-based potential of 5713 - 7891 TWh y-1 and 2770 TWh y-1 for PV and CSP, respectively. As energy, food, and land are inextricably linked, our study shows how land favorable for renewable energy systems can be used more effectively in places where land is

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

PubMed Central

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; Cushing, Scott K.; Borja, Lauren J.; Gandman, Andrey; Kaplan, Christopher J.; Oh, Myoung Hwan; Prell, James S.; Prendergast, David; Pemmaraju, Chaitanya D.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si0.25Ge0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M4,5-edge (∼30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons across the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔEgap,Ge,direct=0.8 eV) and Si0.25Ge0.75 indirect gaps (ΔEgap,Si0.25Ge0.75,indirect=0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si0.25Ge0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution. PMID:28653020

Holstein polaron in a valley-degenerate two-dimensional semiconductor.

PubMed

Kang, Mingu; Jung, Sung Won; Shin, Woo Jong; Sohn, Yeongsup; Ryu, Sae Hee; Kim, Timur K; Hoesch, Moritz; Kim, Keun Su

2018-05-28

Two-dimensional (2D) crystals have emerged as a class of materials with tunable carrier density 1 . Carrier doping to 2D semiconductors can be used to modulate many-body interactions 2 and to explore novel composite particles. The Holstein polaron is a small composite particle of an electron that carries a cloud of self-induced lattice deformation (or phonons) 3-5 , which has been proposed to play a key role in high-temperature superconductivity 6 and carrier mobility in devices 7 . Here we report the discovery of Holstein polarons in a surface-doped layered semiconductor, MoS 2 , in which a puzzling 2D superconducting dome with the critical temperature of 12 K was found recently 8-11 . Using a high-resolution band mapping of charge carriers, we found strong band renormalizations collectively identified as a hitherto unobserved spectral function of Holstein polarons 12-18 . The short-range nature of electron-phonon (e-ph) coupling in MoS 2 can be explained by its valley degeneracy, which enables strong intervalley coupling mediated by acoustic phonons. The coupling strength is found to increase gradually along the superconducting dome up to the intermediate regime, which suggests a bipolaronic pairing in the 2D superconductivity.

Temperature-dependent electrical characteristics and carrier transport mechanism of p-Cu2ZnSnS4/n-GaN heterojunctions

NASA Astrophysics Data System (ADS)

Niteesh Reddy, Varra; Reddy, M. Siva Pratap; Gunasekhar, K. R.; Lee, Jung-Hee

2018-04-01

This work explores the temperature-dependent electrical characteristics and carrier transport mechanism of Au/p-Cu2ZnSnS4/n-type GaN heterojunction (HJ) diodes with a CZTS interlayer. The electrical characteristics were examined by current-voltage-temperature, turn-on voltage-temperature and series resistance-temperature in the high-temperature range of 300-420 K. It is observed that an exponential decrease in the series resistance ( R S) and increase in the ideality factor ( n) and barrier height ( ϕ b) with increase in temperature. The thermal coefficient ( K j) is determined to be - 1.3 mV K-1 at ≥ 300 K. The effective ϕ b is determined to be 1.21 eV. This obtained barrier height is consistent with the theoretical one. The characteristic temperature ( T 0) resulting from the Cheung's functions [d V/d(ln I) vs. I and H( I) vs. I], is seen that there is good agreement between the T 0 values from both Cheung's functions. The relevant carrier transport mechanisms of Au/p-CZTS/n-type GaN HJ are explained based on the thermally decreased energy band gap of n-type GaN layers, thermally activated deep donors and increased further activated shallow donors.

Switching effects and spin-valley Andreev resonant peak shifting in silicene superconductor

NASA Astrophysics Data System (ADS)

Soodchomshom, Bumned; Niyomsoot, Kittipong; Pattrawutthiwong, Eakkarat

2018-03-01

The magnetoresistance and spin-valley transport properties in a silicene-based NM/FB/SC junction are investigated, where NM, FB and SC are normal, ferromagnetic and s-wave superconducting silicene, respectively. In the FB region, perpendicular electric and staggered exchange fields are applied. The quasiparticles may be described by Dirac Bogoliubov-de Gennes equation due to Cooper pairs formed by spin-valley massive fermions. The spin-valley conductances are calculated based on the modified Blonder-Tinkham-Klapwijk formalism. We find the spin-valley dependent Andreev resonant peaks in the junction shifted by applying exchange field. Perfect conductance switch generated by interplay of intrinsic spin orbit interaction and superconducting gap has been predicted. Spin and valley polarizations are almost linearly dependent on biased voltage near zero bias and then turn into perfect switch at biased voltage approaching the superconducting gap. The perfect switching of large magnetoresistance has been also predicted at biased energy near the superconducting gap. These switching effects may be due to the presence of spin-valley Andreev resonant peak near the superconducting gap. Our work reveals potential of silicene as applications of electronic switching devices and linear control of spin and valley polarizations.

Hot Carrier-Based Near-Field Thermophotovoltaic Energy Conversion.

PubMed

St-Gelais, Raphael; Bhatt, Gaurang Ravindra; Zhu, Linxiao; Fan, Shanhui; Lipson, Michal

2017-03-28

Near-field thermophotovoltaics (NFTPV) is a promising approach for direct conversion of heat to electrical power. This technology relies on the drastic enhancement of radiative heat transfer (compared to conventional blackbody radiation) that occurs when objects at different temperatures are brought to deep subwavelength distances (typically <100 nm) from each other. Achieving such radiative heat transfer between a hot object and a photovoltaic (PV) cell could allow direct conversion of heat to electricity with a greater efficiency than using current solid-state technologies (e.g., thermoelectric generators). One of the main challenges in the development of this technology, however, is its incompatibility with conventional silicon PV cells. Thermal radiation is weak at frequencies larger than the ∼1.1 eV bandgap of silicon, such that PV cells with lower excitation energies (typically 0.4-0.6 eV) are required for NFTPV. Using low bandgap III-V semiconductors to circumvent this limitation, as proposed in most theoretical works, is challenging and therefore has never been achieved experimentally. In this work, we show that hot carrier PV cells based on Schottky junctions between silicon and metallic films could provide an attractive solution for achieving high efficiency NFTPV electricity generation. Hot carrier science is currently an important field of research and several approaches are investigated for increasing the quantum efficiency (QE) of hot carrier generation beyond conventional Fowler model predictions. If the Fowler limit can indeed be overcome, we show that hot carrier-based NFTPV systems-after optimization of their thermal radiation spectrum-could allow electricity generation with up to 10-30% conversion efficiencies and 10-500 W/cm 2 generated power densities (at 900-1500 K temperatures). We also discuss how the unique properties of thermal radiation in the extreme near-field are especially well suited for investigating recently proposed approaches

Terahertz quantum cascade laser with an X-valley-based injector

NASA Astrophysics Data System (ADS)

Roy, Mithun; Talukder, Muhammad Anisuzzaman

2017-04-01

We present a novel terahertz (THz) quantum cascade laser (QCL) design where Γ-valley states are used for lasing transition and X-valley states—in particular, Xz-states—are used as injector subbands. Since the lasing states in our proposed structure are populated and depopulated mainly through the interface roughness assisted Γ-Xz electron scattering, we present a model to describe this intervalley carrier transport. In the injector region of the proposed THz QCL, we use a quaternary AlGaAsP material to introduce tensile strain, which plays a crucial role in increasing the gain. To compensate the strain per period, we propose to grow the periodic heterostructure on a GaAs 0.94 P 0.06 virtual substrate. To simulate the carrier transport and hence calculate the gain and lasing performance of the proposed THz QCL, we use a simplified density matrix formalism that considers resonant tunneling, dephasing, and the important intersubband scattering mechanisms. Since electron temperature significantly varies from lattice temperature for QCLs, we take their difference into account using the kinetic energy balance method. We show that the proposed structure is capable of lasing up to a maximum lattice temperature of ˜119 K at 4.8 THz. For future improvements of the device, we identify major performance-degrading factors of the proposed design.

Trap Modulated Charge Carrier Transport in Polyethylene/Graphene Nanocomposites.

PubMed

Li, Zhonglei; Du, Boxue; Han, Chenlei; Xu, Hang

2017-06-21

The role of trap characteristics in modulating charge transport properties is attracting much attentions in electrical and electronic engineering, which has an important effect on the electrical properties of dielectrics. This paper focuses on the electrical properties of Low-density Polyethylene (LDPE)/graphene nanocomposites (NCs), as well as the corresponding trap level characteristics. The dc conductivity, breakdown strength and space charge behaviors of NCs with the filler content of 0 wt%, 0.005 wt%, 0.01 wt%, 0.1 wt% and 0.5 wt% are studied, and their trap level distributions are characterized by isothermal discharge current (IDC) tests. The experimental results show that the 0.005 wt% LDPE/graphene NCs have a lower dc conductivity, a higher breakdown strength and a much smaller amount of space charge accumulation than the neat LDPE. It is indicated that the graphene addition with a filler content of 0.005 wt% introduces large quantities of deep carrier traps that reduce charge carrier mobility and result in the homocharge accumulation near the electrodes. The deep trap modulated charge carrier transport attributes to reduce the dc conductivity, suppress the injection of space charges into polymer bulks and enhance the breakdown strength, which is of great significance in improving electrical properties of polymer dielectrics.

Study of carrier-mobility of organic thin film by dark-injection time-of-flight and electric-field-induced optical second-harmonic generation measurements

NASA Astrophysics Data System (ADS)

Li, Xin; Sunaga, Masashi; Taguchi, Dai; Manaka, Takaaki; Lin, Hong; Iwamoto, Mitsumasa

2017-06-01

By using dark-injection time-of-flight (ToF) and time-resolved electric-field-induced optical second-harmonic generation (EFISHG) measurements, we studied carrier mobility μ of pentacene (Pen) thin film of ITO/Pen/Al and Au/Pen/polyimide/ITO diodes where pentacene film is ∼100 nm in thickness. ToF showed that determination of transit time tr from trace of transient currents is difficult owing to large capacitive charging current. On the other hand, optical EFISHG is free from this charging current, and allows us to calculate hole and electron mobility as μh = 1.8 ×10-4 cm2/Vs and μe = 7.6 ×10-7 cm2/Vs, respectively, by using the relation tr = d / μ ∫tc tr E (0) dt (d : Pen thickness, E (0) : electric field across Pen), instead of the conventional relationship tr =d2 / μV (V : voltage across Pen). Time-resolved EFISHG measurement is useful for the determination of carrier mobility of organic thin film in organic devices.

Mechanism of the free charge carrier generation in the dielectric breakdown

NASA Astrophysics Data System (ADS)

Rahim, N. A. A.; Ranom, R.; Zainuddin, H.

2017-12-01

Many studies have been conducted to investigate the effect of environmental, mechanical and electrical stresses on insulator. However, studies on physical process of discharge phenomenon, leading to the breakdown of the insulator surface are lacking and difficult to comprehend. Therefore, this paper analysed charge carrier generation mechanism that can cause free charge carrier generation, leading toward surface discharge development. Besides, this paper developed a model of surface discharge based on the charge generation mechanism on the outdoor insulator. Nernst’s Planck theory was used in order to model the behaviour of the charge carriers while Poisson’s equation was used to determine the distribution of electric field on insulator surface. In the modelling of surface discharge on the outdoor insulator, electric field dependent molecular ionization was used as the charge generation mechanism. A mathematical model of the surface discharge was solved using method of line technique (MOL). The result from the mathematical model showed that the behaviour of net space charge density was correlated with the electric field distribution.

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE PAGES

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.; ...

2017-06-06

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

Ultrafast carrier thermalization and trapping in silicon-germanium alloy probed by extreme ultraviolet transient absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zürch, Michael; Chang, Hung-Tzu; Kraus, Peter M.

Semiconductor alloys containing silicon and germanium are of growing importance for compact and highly efficient photonic devices due to their favorable properties for direct integration into silicon platforms and wide tunability of optical parameters. Here, we report the simultaneous direct and energy-resolved probing of ultrafast electron and hole dynamics in a silicon-germanium alloy with the stoichiometry Si 0.25Ge 0.75 by extreme ultraviolet transient absorption spectroscopy. Probing the photoinduced dynamics of charge carriers at the germanium M 4,5-edge (~30 eV) allows the germanium atoms to be used as reporter atoms for carrier dynamics in the alloy. The photoexcitation of electrons acrossmore » the direct and indirect band gap into conduction band (CB) valleys and their subsequent hot carrier relaxation are observed and compared to pure germanium, where the Ge direct (ΔE gap,Ge,direct = 0.8 eV) and Si 0.25Ge 0.75 indirect gaps (ΔE gap,Si0.25Ge0.75,indirect = 0.95 eV) are comparable in energy. In the alloy, comparable carrier lifetimes are observed for the X, L, and Γ valleys in the conduction band. A midgap feature associated with electrons accumulating in trap states near the CB edge following intraband thermalization is observed in the Si 0.25Ge 0.75 alloy. The successful implementation of the reporter atom concept for capturing the dynamics of the electronic bands by site-specific probing in solids opens a route to study carrier dynamics in more complex materials with femtosecond and sub-femtosecond temporal resolution.« less

Temperature-Dependent Electrical Properties and Carrier Transport Mechanisms of TMAH-Treated Ni/Au/Al2O3/GaN MIS Diode

NASA Astrophysics Data System (ADS)

Reddy, M. Siva Pratap; Puneetha, Peddathimula; Reddy, V. Rajagopal; Lee, Jung-Hee; Jeong, Seong-Hoon; Park, Chinho

2016-11-01

The temperature-dependent electrical properties and carrier transport mechanisms of tetramethylammonium hydroxide (TMAH)-treated Ni/Au/Al2O3/GaN metal-insulator-semiconductor (MIS) diodes have been investigated by current-voltage ( I- V) and capacitance-voltage ( C- V) measurements. The experimental results reveal that the barrier height ( I- V) increases whereas the ideality factor decreases with increasing temperature. The TMAH-treated Ni/Au/Al2O3/GaN MIS diode showed nonideal behaviors which indicate the presence of a nonuniform distribution of interface states ( N SS) and effect of series resistance ( R S). The obtained R S and N SS were found to decrease with increasing temperature. Furthermore, it was found that different transport mechanisms dominated in the TMAH-treated Ni/Au/Al2O3/GaN MIS diode. At 150 K to 250 K, Poole-Frenkel emission (PFE) was found to be responsible for the reverse leakage, while Schottky emission (SE) was the dominant mechanism at high electric fields in the temperature range from 300 K to 400 K. Feasible energy band diagrams and possible carrier transport mechanisms for the TMAH-treated Ni/Au/Al2O3/GaN MIS diode are discussed based on PFE and SE.

Spin- and valley-dependent electronic band structure and electronic heat capacity of ferromagnetic silicene in the presence of strain, exchange field and Rashba spin-orbit coupling

NASA Astrophysics Data System (ADS)

Hoi, Bui Dinh; Yarmohammadi, Mohsen; Kazzaz, Houshang Araghi

2017-10-01

We studied how the strain, induced exchange field and extrinsic Rashba spin-orbit coupling (RSOC) enhance the electronic band structure (EBS) and electronic heat capacity (EHC) of ferromagnetic silicene in presence of external electric field (EF) by using the Kane-Mele Hamiltonian, Dirac cone approximation and the Green's function approach. Particular attention is paid to investigate the EHC of spin-up and spin-down bands at Dirac K and K‧ points. We have varied the EF, strain, exchange field and RSOC to tune the energy of inter-band transitions and consequently EHC, leading to very promising features for future applications. Evaluation of EF exhibits three phases: Topological insulator (TI), valley-spin polarized metal (VSPM) and band insulator (BI) at given aforementioned parameters. As a new finding, we have found a quantum anomalous Hall phase in BI regime at strong RSOCs. Interestingly, the effective mass of carriers changes with strain, resulting in EHC behaviors. Here, exchange field has the same behavior with EF. Finally, we have confirmed the reported and expected symmetry results for both Dirac points and spins with the study of valley-dependent EHC.

Valley-dependent band structure and valley polarization in periodically modulated graphene

NASA Astrophysics Data System (ADS)

Lu, Wei-Tao

2016-08-01

The valley-dependent energy band and transport property of graphene under a periodic magnetic-strained field are studied, where the time-reversal symmetry is broken and the valley degeneracy is lifted. The considered superlattice is composed of two different barriers, providing more degrees of freedom for engineering the electronic structure. The electrons near the K and K' valleys are dominated by different effective superlattices. It is found that the energy bands for both valleys are symmetric with respect to ky=-(AM+ξ AS) /4 under the symmetric superlattices. More finite-energy Dirac points, more prominent collimation behavior, and new crossing points are found for K' valley. The degenerate miniband near the K valley splits into two subminibands and produces a new band gap under the asymmetric superlattices. The velocity for the K' valley is greatly renormalized compared with the K valley, and so we can achieve a finite velocity for the K valley while the velocity for the K' valley is zero. Especially, the miniband and band gap could be manipulated independently, leading to an increase of the conductance. The characteristics of the band structure are reflected in the transmission spectra. The Dirac points and the crossing points appear as pronounced peaks in transmission. A remarkable valley polarization is obtained which is robust to the disorder and can be controlled by the strain, the period, and the voltage.

77 FR 47493 - DMH Trust fbo Martha M. Head-Acquisition of Control Exemption-Red River Valley & Western Railroad...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-08

... Martha M. Head--Acquisition of Control Exemption-- Red River Valley & Western Railroad and Rutland Line, Inc. DMH Trust fbo Martha M. Head (the Trust), a noncarrier, has filed a verified notice of exemption...\\ both Class III rail carriers. \\1\\ RLI is a wholly owned subsidiary of RRVW. According to the Trust...

Electrically driven spin qubit based on valley mixing

NASA Astrophysics Data System (ADS)

Huang, Wister; Veldhorst, Menno; Zimmerman, Neil M.; Dzurak, Andrew S.; Culcer, Dimitrie

2017-02-01

The electrical control of single spin qubits based on semiconductor quantum dots is of great interest for scalable quantum computing since electric fields provide an alternative mechanism for qubit control compared with magnetic fields and can also be easier to produce. Here we outline the mechanism for a drastic enhancement in the electrically-driven spin rotation frequency for silicon quantum dot qubits in the presence of a step at a heterointerface. The enhancement is due to the strong coupling between the ground and excited states which occurs when the electron wave function overcomes the potential barrier induced by the interface step. We theoretically calculate single qubit gate times tπ of 170 ns for a quantum dot confined at a silicon/silicon-dioxide interface. The engineering of such steps could be used to achieve fast electrical rotation and entanglement of spin qubits despite the weak spin-orbit coupling in silicon.

Electrically tunable polarizer based on 2D orthorhombic ferrovalley materials

NASA Astrophysics Data System (ADS)

Shen, Xin-Wei; Tong, Wen-Yi; Gong, Shi-Jing; Duan, Chun-Gang

2018-03-01

The concept of ferrovalley materials has been proposed very recently. The existence of spontaneous valley polarization, resulting from ferromagnetism, in such hexagonal 2D materials makes nonvolatile valleytronic applications realizable. Here, we introduce a new member of ferrovalley family with orthorhombic lattice, i.e. monolayer group-IV monochalcogenides (GIVMs), in which the intrinsic valley polarization originates from ferroelectricity, instead of ferromagnetism. Combining the group theory analysis and first-principles calculations, we demonstrate that, different from the valley-selective circular dichroism in hexagonal lattice, linearly polarized optical selectivity for valleys exists in the new type of ferrovalley materials. On account of the distinctive property, a prototype of electrically tunable polarizer is realized. In the ferrovalley-based polarizer, a laser beam can be optionally polarized in x- or y-direction, depending on the ferrovalley state controlled by external electric fields. Such a device can be further optimized to emit circularly polarized radiation with specific chirality and to realize the tunability for operating wavelength. Therefore, we show that 2D orthorhombic ferrovalley materials are the promising candidates to provide an advantageous platform to realize the polarizer driven by electric means, which is of great importance in extending the practical applications of valleytronics.

Response of power systems to the San Fernando Valley earthquake of 9 February 1971. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schiff, A.J.; Yao, J.T.P.

1972-01-01

The impact of the San Fernando Valley earthquake on electric power systems is discussed. Particular attention focused on the following three areas; (1) the effects of an earthquake on the power network in the Western States, (2) the failure of subsystems and components of the power system, and (3) the loss of power to hospitals. The report includes sections on the description and functions of major components of a power network, existing procedures to protect the network, safety devices within the system which influence the network, a summary of the effects of the San Fernando Valley earthquake on the Westernmore » States Power Network, and present efforts to reduce the network vulnerability to faults. Also included in the report are a review of design procedures and practices prior to the San Fernando Valley earthquake and descriptions of types of damage to electrical equipment, dynamic analysis of equipment failures, equipment surviving the San Fernando Valley earthquake and new seismic design specifications. In addition, some observations and insights gained during the study, which are not directly related to power systems are discussed.« less

Implementation of ground penetrating radar and electrical resistivity tomography for inspecting the Greco-Roman Necropolis at Kilo 6 of the Golden Mummies Valley, Bahariya Oasis, Egypt

NASA Astrophysics Data System (ADS)

Abbas, Abbas M.; Ghazala, Hosni H.; Mesbah, Hany S.; Atya, Magdy A.; Radwan, Ali; Hamed, Diaa E.

2016-06-01

Bahariya Oasis is one of the lately inspected spots in Egypt and has a long historical record extending from the old kingdom till the emergence of Islam. Since June 1999, the Valley of the Golden Mummies near Bawiti (at kilometer 6 on the road leads to Farafra Oasis) became significant due to the discoveries of amazing mummies of gelded faces. The archeologists believe that the Valley has more valuable tombs that still unrevealed. Also, the possibility that the Greco-Roman Necropolis extends to areas other than Kilo-6 is sustainable. The ground penetrating radar and electrical resistivity tomography are two geophysical tools that have successful applications in archeological assessment. The two techniques were used in integration plan to assert the archeological potentiality of the studied site and to map the feasible tombs. Sum of 798 GPR profiles and 19 ERT cross sections was carried out over the study area. The results of them were analyzed to envisage these results in archeological terms.

A consortium of three brings real geothermal power for California's Imperial valley -- at last

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wehlage, E.F.

1983-04-01

Imperial Valley's geothermal history gets a whole new chapter with dedication ceremony for southern California's unusual 10,000 kilowatt power station-SCE in joint corporate venture with Southern Pacific and Union Oil. America's newest and unique electric power generation facility, The Salton Sea Geothermal-Electric Project, was the the site of a formal dedication ceremony while the sleek and stainless jacketed piping and machinery were displayed against a flawlessly brilliant January sky - blue and flecked with a few whisps of high white clouds, while plumes of geothermal steam rose across the desert. The occasion was the January 19, 1983, ceremonial dedication ofmore » the unique U.S.A. power generation facility constructed by an energy consortium under private enterprise, to make and deliver electricity, using geothermal steam released (with special cleaning and treatment) from magma-heated fluids produced at depths of 3,000 to 6,000 feet beneath the floor of the Imperial Valley near Niland and Brawley, California.« less

Subsurface valleys and geoarcheology of the Eastern Sahara revealed by shuttle radar

USGS Publications Warehouse

McCauley, J.F.; Schaber, G.G.; Breed, C.S.; Grolier, M.J.; Haynes, C.V.; Issawi, B.; Elachi, C.; Blom, R.

1982-01-01

The shuttle imaging radar (SIR-A) carried on the space shuttle Columbia in November 1981 penetrated the extremely dry Selima Sand Sheet, dunes, and drift sand of the eastern Sahara, revealing previously unknown buried valleys, geologic structures, and possible Stone Age occupation sites. Radar responses from bedrock and gravel surfaces beneath windblown sand several centimeters to possibly meters thick delineate sand- and alluvium-filled valleys, some nearly as wide as the Nile Valley and perhaps as old as middle Tertiary. The nov-vanished maijor river systems that carved these large valleys probably accomplished most of the erosional stripping of this extraordinarily flat, hyperarid region. Underfit and incised dry wadis, many superimposed on the large valleys, represent erosion by intermittent running water, probably during Quaternary pluvials. Stone Age artifacts associated with soils in the alluvium suggest that areas near the wadis may have been sites of early human occupation. The presence of old drainage networks beneath the sand sheet provides a geologic explanation for the locations of many playas and present-day oases which have been centers of episodic human habitation. Radar penetration of dry sand and soils varies with the wavelength of the incident signals (24 centimeters for the SIR-A system), incidence angle, and the electrical properties of the materials, which are largely determined by moisture content. The calculated depth of radar penetration of dry sand and granules, based on laboratory measurements of the electrical properties of samples from the Selima Sand Sheet, is at least 5 meters. Recent (September 1982) field studies in Egypt verified SIR-A signal penetration depths of at least 1 meter in the Selima Sand Sheet and in drift sand and 2 or more meters in sand dunes. Copyright ?? 1982 AAAS.

Hitchhiker-G: A new carrier system for attached shuttle payloads

NASA Technical Reports Server (NTRS)

Goldsmith, T. C.

1987-01-01

A new carrier system has been developed for economical and quick response flight of small attached payloads on the space shuttle. Hitchhiker-G can accommodate up to 750 lb. of customer payloads in canisters or mounted to an exposed plate. The carrier connects to the orbiter's electrical systems and provides up to six customers with standard electrical services including power, real time telemetry, and commands. A transparent data and command system concept is employed to allow the customer to easily use his own ground support equipment and personnel to control his payload during integration and flight operations. The first Hitchhiker-G was successfully flown in January 1986 on STS 61C.

Carrier Injection and Scattering in Atomically Thin Chalcogenides

NASA Astrophysics Data System (ADS)

Li, Song-Lin; Tsukagoshi, Kazuhito

2015-12-01

Atomically thin two-dimensional chalcogenides such as MoS2 monolayers are structurally ideal channel materials for the ultimate atomic electronics. However, a heavy thickness dependence of electrical performance is shown in these ultrathin materials, and the device performance normally degrades while exhibiting a low carrier mobility as compared with corresponding bulks, constituting a main hurdle for application in electronics. In this brief review, we summarize our recent work on electrode/channel contacts and carrier scattering mechanisms to address the origins of this adverse thickness dependence. Extrinsically, the Schottky barrier height increases at the electrode/channel contact area in thin channels owing to bandgap expansion caused by quantum confinement, which hinders carrier injection and degrades device performance. Intrinsically, thin channels tend to suffer from intensified Coulomb impurity scattering, resulting from the reduced interaction distance between interfacial impurities and channel carriers. Both factors are responsible for the adverse dependence of carrier mobility on channel thickness in two-dimensional semiconductors.

Coupling mechanism of electric vehicle and grid under the background of smart grid

NASA Astrophysics Data System (ADS)

Dong, Mingyu; Li, Dezhi; Chen, Rongjun; Shu, Han; He, Yongxiu

2018-02-01

With the development of smart distribution technology in the future, electric vehicle users can not only charge reasonably based on peak-valley price, they can also discharge electricity into the power grid to realize their economic benefit when it’s necessary and thus promote peak load shifting. According to the characteristic that future electric vehicles can discharge, this paper studies the interaction effect between electric vehicles and the grid based on TOU (time of use) Price Strategy. In this paper, four scenarios are used to compare the change of grid load after implementing TOU Price Strategy. The results show that the wide access of electric vehicles can effectively reduce peak and valley difference.

Hot Carrier Extraction from Multilayer Graphene.

PubMed

Urcuyo, Roberto; Duong, Dinh Loc; Sailer, Patrick; Burghard, Marko; Kern, Klaus

2016-11-09

Hot carriers in semiconductor or metal nanostructures are relevant, for instance, to enhance the activity of oxide-supported metal catalysts or to achieve efficient photodetection using ultrathin semiconductor layers. Moreover, rapid collection of photoexcited hot carriers can improve the efficiency of solar cells, with a theoretical maximum of 85%. Because of the long lifetime of secondary excited electrons, graphene is an especially promising two-dimensional material to harness hot carriers for solar-to-electricity conversion. However, the photoresponse of thus far realized graphene photoelectric devices is mainly governed by thermal effects, which yield only a very small photovoltage. Here, we report a Gr-TiO x -Ti heterostructure wherein the photovoltaic effect is predominant. By doping the graphene, the open circuit voltage reaches values up to 0.30 V, 2 orders of magnitude larger than for devices relying upon the thermoelectric effect. The photocurrent turned out to be limited by trap states in the few-nanometer-thick TiO x layer. Our findings represent a first valuable step toward the integration of graphene into third-generation solar cells based upon hot carrier extraction.

Assessment of bilayer silicene to probe as quantum spin and valley Hall effect

NASA Astrophysics Data System (ADS)

Rehman, Majeed Ur; Qiao, Zhenhua

2018-02-01

Silicene takes precedence over graphene due to its buckling type structure and strong spin orbit coupling. Motivated by these properties, we study the silicene bilayer in the presence of applied perpendicular electric field and intrinsic spin orbit coupling to probe as quantum spin/valley Hall effect. Using analytical approach, we calculate the spin Chern-number of bilayer silicene and then compare it with monolayer silicene. We reveal that bilayer silicene hosts double spin Chern-number as compared to single layer silicene and therefore accordingly has twice as many edge states in contrast to single layer silicene. In addition, we investigate the combined effect of intrinsic spin orbit coupling and the external electric field, we find that bilayer silicene, likewise single layer silicene, goes through a phase transitions from a quantum spin Hall state to a quantum valley Hall state when the strength of the applied electric field exceeds the intrinsic spin orbit coupling strength. We believe that the results and outcomes obtained for bilayer silicene are experimentally more accessible as compared to bilayer graphene, because of strong SO coupling in bilayer silicene.

Test probe for surface mounted leadless chip carrier

DOEpatents

Meyer, Kerry L.; Topolewski, John

1989-05-23

A test probe for a surface mounted leadless chip carrier is disclosed. The probed includes specially designed connector pins which allow size reductions in the probe. A thermoplastic housing provides spring action to ensure good mechanical and electrical contact between the pins and the contact strips of a leadless chip carrier. Other features include flexible wires molded into the housing and two different types of pins alternately placed in the housing. These features allow fabrication of a smaller and simpler test probe.

Analysis of carrier transport and carrier trapping in organic diodes with polyimide-6,13-Bis(triisopropylsilylethynyl)pentacene double-layer by charge modulation spectroscopy and optical second harmonic generation measurement

NASA Astrophysics Data System (ADS)

Lim, Eunju; Taguchi, Dai; Iwamoto, Mitsumasa

2014-08-01

We studied the carrier transport and carrier trapping in indium tin oxide/polyimide (PI)/6,13-Bis(triisopropylsilylethynyl)pentacene (TIPS-pentacene)/Au diodes by using charge modulation spectroscopy (CMS) and time-resolved electric field induced optical second harmonic generation (TR-EFISHG) measurements. TR-EFISHG directly probes the spatial carrier behaviors in the diodes, and CMS is useful in explaining the carrier motion with respect to energy. The results clearly indicate that the injected carriers move across TIPS-pentacene thorough the molecular energy states of TIPS-pentacene and accumulate at the PI/TIPS-pentacene interface. However, some carriers are trapped in the PI layers. These findings take into account the capacitance-voltage and current-voltage characteristics of the diodes.

Merging seismic and MT in Garden Valley, Nevada

DOE Office of Scientific and Technical Information (OSTI.GOV)

Telleen, K.E.

1986-04-01

In the northern part of Garden Valley, Nevada, a 1978 regional seismic program encountered a large area of poor to no-reflection data. Surface geology suggested that a large high structure might underlie the valley floor, and that shallowly buried basalts were causing the poor data. The implied strongly layered structure of electrical resistivity - resistive basalt on conductive Tertiary clastics on resistive paleozoic carbonates - formed an ideal theater for the magnetotelluric method. In 1984, Conoco acquired 48 magnetotelluric sites on about a half-mile grid. These data supported the presence of a buried high block in the Paleozoic rocks andmore » allowed confident mapping of its outlines. In addition, the magnetotelluric survey showed a thin, shallowly buried resistor coextensive with the seismic no-reflection area. In 1985, a high-effort repeat of the earlier no-reflection seismic line confirmed the high block, improved the fault interpretation, and provided weak guidance on the depth of the targeted Paleozoic rocks. Because Garden Valley's Paleozoic stratigraphy differs negligibly from that at nearby Grant Canyon field, the high block constitutes an attractive prospect - possibly the first one found in Nevada due largely to magnetotelluric surveying.« less

Time Resolved Studies of Carrier Dynamics in III -v Heterojunction Semiconductors.

NASA Astrophysics Data System (ADS)

Westland, Duncan James

Available from UMI in association with The British Library. Requires signed TDF. Picosecond time-resolution photoluminescence spectroscopy has been used to study transient processes in Ga _{.47}In_{.53 }As/InP multiple quantum wells (MQWs), and in bulk Ga_{.47}In _{.53}As and GaSb. To facilitate the experimental studies, apparatus was constructed to allow the detection of transient luminescence with 3ps time resolution. A frequency upconversion technique was employed. Relaxation of energetic carriers in bulk Ga _{.47}In_{.53 }As by optic phonons has been investigated, and, at carrier densities ~3 times 10^{18}cm ^{-3} is found to be a considerably slower process than simple theory predicts. The discrepancy is resolved by the inclusion of a non-equilibrium population of longitudinal optic phonons in the theoretical description. Slow energy loss is also observed in a 154A MQW under similar conditions, but carriers are found to relax more quickly in a 14A MQW with a comparable repeat period. The theory of non-equilibrium mode occupation is modified to describe the case of a MQW and is found to agree with experiment. Carrier relaxation in GaSb is studied and the importance of occupation of the L _6 conduction band valley in this material is demonstrated. The ambipolar diffusion of a photoexcited carrier plasma through an InP capping layer was investigated using an optical time-of-flight technique. This experiment also enables the efficiency of carrier capture by a Ga _{.47}In_{.53 }As quantum well to be determined. A capture time of 4ps was found.

Dominant role of many-body effects on the carrier distribution function of quantum dot lasers

NASA Astrophysics Data System (ADS)

Peyvast, Negin; Zhou, Kejia; Hogg, Richard A.; Childs, David T. D.

2016-03-01

The effects of free-carrier-induced shift and broadening on the carrier distribution function are studied considering different extreme cases for carrier statistics (Fermi-Dirac and random carrier distributions) as well as quantum dot (QD) ensemble inhomogeneity and state separation using a Monte Carlo model. Using this model, we show that the dominant factor determining the carrier distribution function is the free carrier effects and not the choice of carrier statistics. By using empirical values of the free-carrier-induced shift and broadening, good agreement is obtained with experimental data of QD materials obtained under electrical injection for both extreme cases of carrier statistics.

77 FR 33237 - Saline Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-06-05

... Valley Warm Springs Management Plan/Environmental Impact Statement, Death Valley National Park, Inyo... an Environmental Impact Statement for the Saline Valley Warm Springs Management Plan, Death Valley... analysis process for the Saline Valley Warm Springs Management Plan for Death Valley [[Page 33238...

Hydraulic parameters estimation by using an approach based on vertical electrical soundings (VES) in the semi-arid Khanasser valley region, Syria

NASA Astrophysics Data System (ADS)

Asfahani, Jamal

2016-05-01

A new alternative approach based on using Vertical electrical sounding (VES) technique is proposed for computing the hydraulic conductivity K of an aquifer. The approach takes only the salinity of the groundwater into consideration. VES measurements in the locations, where available water samples exist, are required in such an approach, in order to calibrate and establish empirical relationships between transverse resistance Dar-Zarrouck TR parameter and modified transverse resistance MTR, and between MTR and transmissivity T. Those relationships are thereafter used to extrapolate the transmissivity even in the VES points where no water samples exist. This approach is tested and practiced in the Khanasser valley, Northern Syria, where the hydraulic conductivity of the Quaternary aquifer is computed. An acceptable agreement is found between the hydraulic conductivity values obtained by the proposed approach and those obtained by the pumping test which range between 0.864 and 8.64 m/day (10-5 and 10-4 m/s). The Quaternary aquifer transmissivity of the Khanasser Valley, has been characterized by using this approach and by adapting the MTR parameter. The transmissivity varies between a minimum of 79 m2/day and a maximum of 814 m2/day, with an average of 283 m2/day and a standard deviation of 145 m2/day. The easy and inexpensive approach proposed in this paper can be applied in other semi arid regions.

Detection of minority carrier traps in p-type 4H-SiC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfieri, G.; Kimoto, T.

2014-03-03

Contrarily to the case of n-type 4H-SiC, very little is known about the presence of minority carrier traps in p-type epilayers. In this study, we performed the electrical characterization of as-grown, electron irradiated, and thermally oxidized p-type 4H-SiC, by using minority carrier transient spectroscopy. Four minority carrier traps are reported in 1.6–2.3 eV energy range above the valence band edge (E{sub V}). Particular emphasis is given to the mid-gap minority carrier trap (EH{sub 6∕7}) and to its correlation to an energetically close mid-gap majority carrier trap (HK4)

27 CFR 9.57 - Green Valley of Russian River Valley.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Green Valley of Russian River Valley. 9.57 Section 9.57 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.57 Green Valley of Russian River...

27 CFR 9.57 - Green Valley of Russian River Valley.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Green Valley of Russian River Valley. 9.57 Section 9.57 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.57 Green Valley of Russian River...

27 CFR 9.57 - Green Valley of Russian River Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Green Valley of Russian River Valley. 9.57 Section 9.57 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.57 Green Valley of Russian River...

27 CFR 9.57 - Green Valley of Russian River Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Green Valley of Russian River Valley. 9.57 Section 9.57 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.57 Green Valley of Russian River...

27 CFR 9.57 - Green Valley of Russian River Valley.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Green Valley of Russian River Valley. 9.57 Section 9.57 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.57 Green Valley of Russian River...

Use Of limestone resources in flue-gas desulfurization power plants in the Ohio River Valley

USGS Publications Warehouse

Foose, M.P.; Barsotti, A.F.

1999-01-01

In 1994, more than 41 of the approximately 160 coal-fired, electrical- power plants within the six-state Ohio River Valley region used flue-gas desulfurization (FGD) units to desulfurize their emissions, an approximately 100% increase over the number of plants using FGD units in 1989. This increase represents a trend that may continue with greater efforts to meet Federal Clean Air Act standards. Abundant limestone resources exist in the Ohio River Valley and are accessed by approximately 975 quarries. However, only 35 of these are believed to have supplied limestone for FGD electrical generating facilities. The locations of these limestone suppliers do not show a simple spatial correlation with FGD facilities, and the closest quarries are not being used in most cases. Thus, reduction in transportation costs may be possible in some cases. Most waste generated by FGD electrical-generating plants is not recycled. However, many FGD sites are relatively close to gypsum wallboard producers that may be able to process some of their waste.

Test probe for surface mounted leadless chip carrier

DOEpatents

Meyer, K.L.; Topolewski, J.

1987-10-02

A test probe for a surface mounted leadless chip carrier is disclosed. The probe includes specially designed connector pins which allow size reductions in the probe. A thermoplastic housing provides spring action to ensure good mechanical and electrical contact between the pins and the contact strips of a leadless chip carrier. Other features include flexible wires molded into the housing and two different types of pins alternately placed in the housing. These features allow fabrication of a smaller and simpler test probe. 1 fig.

Time Evolution of Charge Carriers & Phonons after Photo-Excitation by an Ultra-Short Light Pulse in Bulk Germanium

NASA Astrophysics Data System (ADS)

Fahy, Stephen; Murphy-Armando, Felipe; Trigo, Mariano; Savic, Ivana; Murray, Eamonn; Reis, David

We have calculated the time-evolution of carriers and generated phonons in Ge after ultrafast photo-excitation above the direct band-gap. The relevant electron-phonon and anharmonic phonon scattering rates are obtained from first-principles electronic structure calculations. Measurements of the x-ray diffuse scattering after excitation near the L point in the Brillouin zone find a relatively slow (5 ps, compared to the typical electron-phonon energy relaxation of the Gamma-L phonon) increase of the phonon population. We find this is due to emission caused by the scattering of electrons between the Delta and L valleys, after the initial depopulation of the Gamma valley. The relative slowness of this process is due to a combination of causes: (i) the finite time for the initial depopulation of the conduction Gamma valley; (ii) the associated electron-phonon coupling is relatively weaker (compared to Gamma-L, Gamma-Delta and Delta-Delta couplings) ; (iii) the TA associated phonon has a long lifetime and (iv) the depopulation of the Delta valley suppresses the phonon emission. Supported by Science Foundation Ireland, Grant 12/1A/1601.

Morphology of large valleys on Hawaii - Evidence for groundwater sapping and comparisons with Martian valleys

NASA Technical Reports Server (NTRS)

Kochel, R. Craig; Piper, Jonathan F.

1986-01-01

Morphometric data on the runoff and sapping valleys on the slopes of Hawaii and Molokai in Hawaii are analyzed. The analysis reveals a clear distinction between the runoff valleys and sapping valleys. The Hawaiian sapping valleys are characterized by: (1) steep valley walls and flat floors, (2) amphitheater heads, (3) low drainage density, (4) paucity of downstream tributaries, (5) low frequency of up-dip tributaries, and (6) structural and stratigraphic control on valley patterns. The characteristics of the Hawaiian sapping valleys are compared to Martian valleys and experimental systems, and good correlation between the data is detected. Flume experiments were also conducted to study the evolution of sapping valleys in response to variable structure and stratigraphy.

Direct measurement of discrete valley and orbital quantum numbers in bilayer graphene.

PubMed

Hunt, B M; Li, J I A; Zibrov, A A; Wang, L; Taniguchi, T; Watanabe, K; Hone, J; Dean, C R; Zaletel, M; Ashoori, R C; Young, A F

2017-10-16

The high magnetic field electronic structure of bilayer graphene is enhanced by the spin, valley isospin, and an accidental orbital degeneracy, leading to a complex phase diagram of broken symmetry states. Here, we present a technique for measuring the layer-resolved charge density, from which we directly determine the valley and orbital polarization within the zero energy Landau level. Layer polarization evolves in discrete steps across 32 electric field-tuned phase transitions between states of different valley, spin, and orbital order, including previously unobserved orbitally polarized states stabilized by skew interlayer hopping. We fit our data to a model that captures both single-particle and interaction-induced anisotropies, providing a complete picture of this correlated electron system. The resulting roadmap to symmetry breaking paves the way for deterministic engineering of fractional quantum Hall states, while our layer-resolved technique is readily extendable to other two-dimensional materials where layer polarization maps to the valley or spin quantum numbers.The phase diagram of bilayer graphene at high magnetic fields has been an outstanding question, with orders possibly between multiple internal quantum degrees of freedom. Here, Hunt et al. report the measurement of the valley and orbital order, allowing them to directly reconstruct the phase diagram.

Imaging ballistic carrier trajectories in graphene using scanning gate microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morikawa, Sei; Masubuchi, Satoru; Dou, Ziwei

2015-12-14

We use scanning gate microscopy to map out the trajectories of ballistic carriers in high-mobility graphene encapsulated by hexagonal boron nitride and subject to a weak magnetic field. We employ a magnetic focusing geometry to image carriers that emerge ballistically from an injector, follow a cyclotron path due to the Lorentz force from an applied magnetic field, and land on an adjacent collector probe. The local electric field generated by the scanning tip in the vicinity of the carriers deflects their trajectories, modifying the proportion of carriers focused into the collector. By measuring the voltage at the collector while scanningmore » the tip, we are able to obtain images with arcs that are consistent with the expected cyclotron motion. We also demonstrate that the tip can be used to redirect misaligned carriers back to the collector.« less

Charge carrier coherence and Hall effect in organic semiconductors

DOE PAGES

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force actingmore » on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Lastly, our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.« less

Charge carrier coherence and Hall effect in organic semiconductors.

PubMed

Yi, H T; Gartstein, Y N; Podzorov, V

2016-03-30

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor.

Charge carrier coherence and Hall effect in organic semiconductors

PubMed Central

Yi, H. T.; Gartstein, Y. N.; Podzorov, V.

2016-01-01

Hall effect measurements are important for elucidating the fundamental charge transport mechanisms and intrinsic mobility in organic semiconductors. However, Hall effect studies frequently reveal an unconventional behavior that cannot be readily explained with the simple band-semiconductor Hall effect model. Here, we develop an analytical model of Hall effect in organic field-effect transistors in a regime of coexisting band and hopping carriers. The model, which is supported by the experiments, is based on a partial Hall voltage compensation effect, occurring because hopping carriers respond to the transverse Hall electric field and drift in the direction opposite to the Lorentz force acting on band carriers. We show that this can lead in particular to an underdeveloped Hall effect observed in organic semiconductors with substantial off-diagonal thermal disorder. Our model captures the main features of Hall effect in a variety of organic semiconductors and provides an analytical description of Hall mobility, carrier density and carrier coherence factor. PMID:27025354

Magnetoelectric effect in bilayer graphene controlled by valley-isospin density

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zülicke, U.; Winkler, R.

2014-09-01

We show that bilayer graphene (BLG) exhibits magnetoelectric (ME) effects that are formally similar to those commonly seen in band insulators with broken inversion and time-reversal symmetries. Three unusual features characterize the ME responses exhibited by BLG: (i) unlike most other ME media, BLG is a conductor, (ii) BLG has a nonquantized ME coupling even though its electronic structure does not break parity and time-reversal symmetry, and (iii) the magnitude of the ME coupling in BLG is determined by the valley-isospin density, which can be manipulated experimentally. This last property also enables a purely electric measurement of valley-isospin densities. Whilemore » our theoretical arguments use BLG as an example, they are generally valid for any material with similar symmetries« less

Interrogator system for identifying electrical circuits

DOEpatents

Jatko, W.B.; McNeilly, D.R.

1988-04-12

A system for interrogating electrical leads to correctly ascertain the identity of equipment attached to remote ends of the leads is disclosed. The system includes a source of a carrier signal generated in a controller/receiver to be sent over the leads and an identifier unit at the equipment. The identifier is activated by command of the carrier and uses a portion of the carrier to produce a supply voltage. Each identifier is uniquely programmed for a specific piece of equipment, and causes the impedance of the circuit to be modified whereby the carrier signal is modulated according to that program. The modulation can be amplitude, frequency or phase modulation. A demodulator in the controller/receiver analyzes the modulated carrier signal, and if a verified signal is recognized displays and/or records the information. This information can be utilized in a computer system to prepare a wiring diagram of the electrical equipment attached to specific leads. Specific circuit values are given for amplitude modulation, and the system is particularly described for use with thermocouples. 6 figs.

Interrogator system for identifying electrical circuits

DOEpatents

Jatko, William B.; McNeilly, David R.

1988-01-01

A system for interrogating electrical leads to correctly ascertain the identity of equipment attached to remote ends of the leads. The system includes a source of a carrier signal generated in a controller/receiver to be sent over the leads and an identifier unit at the equipment. The identifier is activated by command of the carrier and uses a portion of the carrier to produce a supply voltage. Each identifier is uniquely programmed for a specific piece of equipment, and causes the impedance of the circuit to be modified whereby the carrier signal is modulated according to that program. The modulation can be amplitude, frequency or phase modulation. A demodulator in the controller/receiver analyzes the modulated carrier signal, and if a verified signal is recognized displays and/or records the information. This information can be utilized in a computer system to prepare a wiring diagram of the electrical equipment attached to specific leads. Specific circuit values are given for amplitude modulation, and the system is particularly described for use with thermocouples.

Dual field effects in electrolyte-gated spinel ferrite: electrostatic carrier doping and redox reactions.

PubMed

Ichimura, Takashi; Fujiwara, Kohei; Tanaka, Hidekazu

2014-07-24

Controlling the electronic properties of functional oxide materials via external electric fields has attracted increasing attention as a key technology for next-generation electronics. For transition-metal oxides with metallic carrier densities, the electric-field effect with ionic liquid electrolytes has been widely used because of the enormous carrier doping capabilities. The gate-induced redox reactions revealed by recent investigations have, however, highlighted the complex nature of the electric-field effect. Here, we use the gate-induced conductance modulation of spinel ZnxFe₃₋xO₄ to demonstrate the dual contributions of volatile and non-volatile field effects arising from electronic carrier doping and redox reactions. These two contributions are found to change in opposite senses depending on the Zn content x; virtual electronic and chemical field effects are observed at appropriate Zn compositions. The tuning of field-effect characteristics via composition engineering should be extremely useful for fabricating high-performance oxide field-effect devices.

Hot-electron effect in spin relaxation of electrically injected electrons in intrinsic Germanium.

PubMed

Yu, T; Wu, M W

2015-07-01

The hot-electron effect in the spin relaxation of electrically injected electrons in intrinsic germanium is investigated by the kinetic spin Bloch equations both analytically and numerically. It is shown that in the weak-electric-field regime with E ≲ 0.5 kV cm(-1), our calculations have reasonable agreement with the recent transport experiment in the hot-electron spin-injection configuration (2013 Phys. Rev. Lett. 111 257204). We reveal that the spin relaxation is significantly enhanced at low temperature in the presence of weak electric field E ≲ 50 V cm(-1), which originates from the obvious center-of-mass drift effect due to the weak electron-phonon interaction, whereas the hot-electron effect is demonstrated to be less important. This can explain the discrepancy between the experimental observation and the previous theoretical calculation (2012 Phys. Rev. B 86 085202), which deviates from the experimental results by about two orders of magnitude at low temperature. It is further shown that in the strong-electric-field regime with 0.5 ≲ E ≲ 2 kV cm(-1), the spin relaxation is enhanced due to the hot-electron effect, whereas the drift effect is demonstrated to be marginal. Finally, we find that when 1.4 ≲ E ≲ 2 kV cm(-1) which lies in the strong-electric-field regime, a small fraction of electrons (≲5%) can be driven from the L to Γ valley, and the spin relaxation rates are the same for the Γ and L valleys in the intrinsic sample without impurity. With the negligible influence of the spin dynamics in the Γ valley to the whole system, the spin dynamics in the L valley can be measured from the Γ valley by the standard direct optical transition method.

Solar-induced direct biomass-to-electricity hybrid fuel cell using polyoxometalates as photocatalyst and charge carrier.

PubMed

Liu, Wei; Mu, Wei; Liu, Mengjie; Zhang, Xiaodan; Cai, Hongli; Deng, Yulin

2014-01-01

The current polymer-exchange membrane fuel cell technology cannot directly use biomass as fuel. Here we present a solar-induced hybrid fuel cell that is directly powered with natural polymeric biomasses, such as starch, cellulose, lignin, and even switchgrass and wood powders. The fuel cell uses polyoxometalates as the photocatalyst and charge carrier to generate electricity at low temperature. This solar-induced hybrid fuel cell combines some features of solar cells, fuel cells and redox flow batteries. The power density of the solar-induced hybrid fuel cell powered by cellulose reaches 0.72 mW cm(-2), which is almost 100 times higher than cellulose-based microbial fuel cells and is close to that of the best microbial fuel cells reported in literature. Unlike most cell technologies that are sensitive to impurities, the cell reported in this study is inert to most organic and inorganic contaminants present in the fuels.

Solar-induced direct biomass-to-electricity hybrid fuel cell using polyoxometalates as photocatalyst and charge carrier

NASA Astrophysics Data System (ADS)

Liu, Wei; Mu, Wei; Liu, Mengjie; Zhang, Xiaodan; Cai, Hongli; Deng, Yulin

2014-02-01

The current polymer-exchange membrane fuel cell technology cannot directly use biomass as fuel. Here we present a solar-induced hybrid fuel cell that is directly powered with natural polymeric biomasses, such as starch, cellulose, lignin, and even switchgrass and wood powders. The fuel cell uses polyoxometalates as the photocatalyst and charge carrier to generate electricity at low temperature. This solar-induced hybrid fuel cell combines some features of solar cells, fuel cells and redox flow batteries. The power density of the solar-induced hybrid fuel cell powered by cellulose reaches 0.72 mW cm-2, which is almost 100 times higher than cellulose-based microbial fuel cells and is close to that of the best microbial fuel cells reported in literature. Unlike most cell technologies that are sensitive to impurities, the cell reported in this study is inert to most organic and inorganic contaminants present in the fuels.

Transient luminescence induced by electrical refilling of charge carrier traps of dislocation network at hydrophilically bonded Si wafers interface

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bondarenko, Anton; Vyvenko, Oleg

2014-02-21

Dislocation network (DN) at hydrophilically bonded Si wafers interface is placed in space charge region (SCR) of a Schottky diode at a depth of about 150 nm from Schottky electrode for simultaneous investigation of its electrical and luminescent properties. Our recently proposed pulsed traps refilling enhanced luminescence (Pulsed-TREL) technique based on the effect of transient luminescence induced by refilling of charge carrier traps with electrical pulses is further developed and used as a tool to establish DN energy levels responsible for D1 band of dislocation-related luminescence in Si (DRL). In present work we do theoretical analysis and simulation of trapsmore » refilling kinetics dependence on refilling pulse magnitude (Vp) in two levels model: shallow and deep. The influence of initial charge state of deep level on shallow level occupation-Vp dependence is discussed. Characteristic features predicted by simulations are used for Pulsed-TREL experimental results interpretation. We conclude that only shallow (∼0.1 eV from conduction and valence band) energetic levels in the band gap participate in D1 DRL.« less

Alternative Fuels Data Center: Electric Trolley Boosts Business in

Science.gov Websites

Bakersfield, CaliforniaA> Electric Trolley Boosts Business in Bakersfield, California to someone Business in Bakersfield, California Discover how Bakersfield's electric trolley is giving a green boost to downtown businesses. For information about this project, contact San Joaquin Valley Clean Cities. Download

Photo-generated carriers lose energy during extraction from polymer-fullerene solar cells

PubMed Central

Melianas, Armantas; Etzold, Fabian; Savenije, Tom J.; Laquai, Frédéric; Inganäs, Olle; Kemerink, Martijn

2015-01-01

In photovoltaic devices, the photo-generated charge carriers are typically assumed to be in thermal equilibrium with the lattice. In conventional materials, this assumption is experimentally justified as carrier thermalization completes before any significant carrier transport has occurred. Here, we demonstrate by unifying time-resolved optical and electrical experiments and Monte Carlo simulations over an exceptionally wide dynamic range that in the case of organic photovoltaic devices, this assumption is invalid. As the photo-generated carriers are transported to the electrodes, a substantial amount of their energy is lost by continuous thermalization in the disorder broadened density of states. Since thermalization occurs downward in energy, carrier motion is boosted by this process, leading to a time-dependent carrier mobility as confirmed by direct experiments. We identify the time and distance scales relevant for carrier extraction and show that the photo-generated carriers are extracted from the operating device before reaching thermal equilibrium. PMID:26537357

49 CFR 172.606 - Carrier information contact.

Code of Federal Regulations, 2010 CFR

2010-10-01

... attached to the vehicle at the brake hose or electrical connection; or (2) Have the shipping paper and... required shall instruct the operator of a motor vehicle, train, aircraft, or vessel to contact the carrier...) For transportation by highway, if a transport vehicle, (e.g., a semi-trailer or freight container-on...

Valley Fever (Coccidioidomycosis) Statistics

MedlinePlus

... Valley fever may be under-recognized. 2 , 3 Public health surveillance for Valley fever Valley fever is reportable ... MMWR) . Check with your local, state, or territorial public health department for more information about disease reporting requirements ...

Gene delivery in conjunction with gold nanoparticle and tumor treating electric field

NASA Astrophysics Data System (ADS)

Tiwari, Pawan K.; Soo Lee, Yeon

2013-08-01

The advances in electrotherapy to treat the diseased biological cell instigate its extension in gene therapy through the delivery of gene into the nucleus. The objective of this study is to investigate the application of moderate intensity alternating electric field, also known as tumor treating electric field on a carrier system consisting of a charged gene complex conjugated to the surface of a gold nanoparticle. The gene delivery mechanism relies on the magnitude and direction of the induced electric field inside the cytoplasm in presence of carrier system. The induced electric field strength is significant in breaking the gene complex-gold nanoparticle bonding, and exerting an electric force pushing the charged gene into the nucleus. The electric force orientation is dependent on the aspect ratio (AR) of the gold nanoparticle and a relationship between them is studied via Maxwell two-dimensional (2D) finite element simulation analyzer. The development of charge density on the surface of carrier system and the required electric field strength to break the bonding are investigated utilizing the Gouy-Chapman-Grahame-Stern (GCGS) theoretical model. A carrier system having the aspect ratio of the gold nanoparticle in the range 1 < AR ≤ 5 and AR = 1 are substantial delivering cationic and anionic genes into the nucleus, respectively.

Phonon-limited carrier mobility and resistivity from carbon nanotubes to graphene

NASA Astrophysics Data System (ADS)

Li, Jing; Miranda, Henrique Pereira Coutada; Niquet, Yann-Michel; Genovese, Luigi; Duchemin, Ivan; Wirtz, Ludger; Delerue, Christophe

2015-08-01

Under which conditions do the electrical transport properties of one-dimensional (1D) carbon nanotubes (CNTs) and 2D graphene become equivalent? We have performed atomistic calculations of the phonon-limited electrical mobility in graphene and in a wide range of CNTs of different types to address this issue. The theoretical study is based on a tight-binding method and a force-constant model from which all possible electron-phonon couplings are computed. The electrical resistivity of graphene is found in very good agreement with experiments performed at high carrier density. A common methodology is applied to study the transition from one to two dimensions by considering CNTs with diameter up to 16 nm. It is found that the mobility in CNTs of increasing diameter converges to the same value, i.e., the mobility in graphene. This convergence is much faster at high temperature and high carrier density. For small-diameter CNTs, the mobility depends strongly on chirality, diameter, and the existence of a band gap.

Energies of the X- and L-valleys in In{sub 0.53}Ga{sub 0.47}As from electronic structure calculations

DOE Office of Scientific and Technical Information (OSTI.GOV)

Greene-Diniz, Gabriel; Greer, J. C.; Fischetti, M. V.

2016-02-07

Several theoretical electronic structure methods are applied to study the relative energies of the minima of the X- and L-conduction-band satellite valleys of In{sub x}Ga{sub 1−x}As with x = 0.53. This III-V semiconductor is a contender as a replacement for silicon in high-performance n-type metal-oxide-semiconductor transistors. The energy of the low-lying valleys relative to the conduction-band edge governs the population of channel carriers as the transistor is brought into inversion, hence determining current drive and switching properties at gate voltages above threshold. The calculations indicate that the position of the L- and X-valley minima are ∼1 eV and ∼1.2 eV, respectively, higher in energymore » with respect to the conduction-band minimum at the Γ-point.« less

Chuckwalla Valley multiple-well monitoring site, Chuckwalla Valley, Riverside County

USGS Publications Warehouse

Everett, Rhett

2013-01-01

The U.S. Geological Survey (USGS), in cooperation with the Bureau of Land Management, is evaluating the geohydrology and water availability of the Chuckwalla Valley, California. As part of this evaluation, the USGS installed the Chuckwalla Valley multiple-well monitoring site (CWV1) in the southeastern portion of the Chuckwalla Basin. Data collected at this site provide information about the geology, hydrology, geophysics, and geochemistry of the local aquifer system, thus enhancing the understanding of the geohydrologic framework of the Chuckwalla Valley. This report presents construction information for the CWV1 multiple-well monitoring site and initial geohydrologic data collected from the site.

Sacramento Valley, CA, USA

NASA Technical Reports Server (NTRS)

1973-01-01

The Sacramento Valley (40.5N, 121.5W) of California is the northern extension of the Central Valley, main agriculture region of the state. Hundreds of truck farms, vineyards and orchards can be seen throughout the length and breadth of the valley which was reclaimed from the desert by means of intensive and extensive irrigation projects.

Carrier lifetimes in polar InGaN-based LEDs

NASA Astrophysics Data System (ADS)

Wang, Lai; Jin, Jie; Hao, Zhibiao; Luo, Yi

2018-02-01

Measurement of carrier lifetime is very important to understand the physics in light-emitting diodes (LEDs), as it builds a link between carrier concentration and excitation power or current density. In this paper, we present our study on optical and electrical characterizations on carrier lifetimes in polar InGaN-based LEDs. First, a carrier rate equation model is proposed to explain the non-exponential nature of time-resolved photoluminescence (TRPL) decay curves, wherein exciton recombination is replaced by bimolecular recombination, considering the influence of polarization field on electron-hole pairs. Then, nonradiative recombination and radiative recombination coefficients can be deduced from fitting and used to calculate the radiative recombination efficiency. By comparing with the temperature-dependent photoluminescence (TDPL) and power-dependent photoluminescence (PDPL), it is found these three methods provide the consistent results. Second, differential carrier lifetimes depending on injection current are measured in commercial near-ultraviolet (NUV), blue and green LEDs. It is found that carrier lifetime is longer in green one and shorter in NUV one, which is attributed to the influence of polarization-induced quantum confined Stark effect (QCSE). This result implies the carrier density is higher in green LED while lower NUV LED, even the injection current is the same. By ignoring Auger recombination and fitting the efficiency-current and carrier lifetime-current curves simultaneously, the dependence of injection efficiency on carrier concentration in different LED samples are plotted. The NUV LED, which has the shallowest InGaN quantum well, actually exhibits the most serious efficiency droop versus carrier concentration. Then, the approaches to overcome the efficiency droop are discussed.

Foothill Transit Battery Electric Bus Demonstration Results

DOT National Transportation Integrated Search

2016-01-01

In October 2010, Foothill Transit began a demonstration of three Proterra battery electric buses (BEBs) in its service area located in the San Gabriel and Pomona Valley region of Los Angeles County, California. The agency had a goal of evaluating the...

Charge carrier mobility in a two-phase disordered organic system in the low-carrier concentration regime

NASA Astrophysics Data System (ADS)

Woellner, Cristiano F.; Li, Zi; Freire, José A.; Lu, Gang; Nguyen, Thuc-Quyen

2013-09-01

In this paper we use a three-dimensional Pauli master equation to investigate the charge carrier mobility of a two-phase system which can mimic donor-acceptor and amorphous-crystalline bulk heterojunctions. By taking the energetic disorder of each phase, their energy offset, and domain morphology into consideration, we show that the carrier mobility can have a completely different behavior when compared to a one-phase system. When the energy offset is equal to zero, the mobility is controlled by the more disordered phase. When the energy offset is nonzero, we show that the mobility electric field dependence switches from negative to positive at a threshold field proportional to the energy offset. Additionally, the influence of morphology, through the domain size and volume ratio parameters, on the transport is investigated and an approximate analytical expression for the zero field mobility is provided.

Inverting polar domains via electrical pulsing in metallic germanium telluride

PubMed Central

Nukala, Pavan; Ren, Mingliang; Agarwal, Rahul; Berger, Jacob; Liu, Gerui; Johnson, A. T. Charlie; Agarwal, Ritesh

2017-01-01

Germanium telluride (GeTe) is both polar and metallic, an unusual combination of properties in any material system. The large concentration of free-carriers in GeTe precludes the coupling of external electric field with internal polarization, rendering it ineffective for conventional ferroelectric applications and polarization switching. Here we investigate alternate ways of coupling the polar domains in GeTe to external electrical stimuli through optical second harmonic generation polarimetry and in situ TEM electrical testing on single-crystalline GeTe nanowires. We show that anti-phase boundaries, created from current pulses (heat shocks), invert the polarization of selective domains resulting in reorganization of certain 71o domain boundaries into 109o boundaries. These boundaries subsequently interact and evolve with the partial dislocations, which migrate from domain to domain with the carrier-wind force (electrical current). This work suggests that current pulses and carrier-wind force could be external stimuli for domain engineering in ferroelectrics with significant current leakage. PMID:28401949

Strain-modulated anisotropy of quantum transport properties in single-layer silicene: Spin and valley filtering

NASA Astrophysics Data System (ADS)

Farokhnezhad, M.; Esmaeilzadeh, M.; Shakouri, Kh.

2017-11-01

Strained two-dimensional crystals often offer novel physical properties that are usable to improve their electronic performance. Here we show by the theory of elasticity combined with the tight-binding approximation that local strains in silicene can open up new prospects for generating fully polarized spin and valley currents. The trajectory of electrons flowing through locally strained regions obeys the same behavior as light waves propagating in uniaxial anisotropic materials. The refraction angle of electrons at local strain boundaries exhibits a strong dependence on the valley degree of freedom, allowing for valley filtering based on the strain direction. The ability to control the spin polarization direction additionally requires a perpendicular electric field to be involved in combination with the local strain. Further similarities of the problem with optics of anisotropic materials are elucidated and possible applications in spin- and valleytronic nanodevices are discussed.

Sacramento Valley, CA, USA

NASA Image and Video Library

1973-06-22

SL2-04-179 (22 June 1973) --- The Sacramento Valley (40.5N, 121.5W) of California is the northern extension of the Central Valley, main agriculture region of the state. Hundreds of truck farms, vineyards and orchards can be seen throughout the length and breadth of the valley which was reclaimed from the desert by means of intensive and extensive irrigation projects. Photo credit: NASA

Observation of acoustic valley vortex states and valley-chirality locked beam splitting

NASA Astrophysics Data System (ADS)

Ye, Liping; Qiu, Chunyin; Lu, Jiuyang; Wen, Xinhua; Shen, Yuanyuan; Ke, Manzhu; Zhang, Fan; Liu, Zhengyou

2017-05-01

We report an experimental observation of the classical version of valley polarized states in a two-dimensional hexagonal sonic crystal. The acoustic valley states, which carry specific linear momenta and orbital angular momenta, were selectively excited by external Gaussian beams and conveniently confirmed by the pressure distribution outside the crystal, according to the criterion of momentum conservation. The vortex nature of such intriguing bulk crystal states was directly characterized by scanning the phase profile inside the crystal. In addition, we observed a peculiar beam-splitting phenomenon, in which the separated beams are constructed by different valleys and locked to the opposite vortex chirality. The exceptional sound transport, encoded with valley-chirality locked information, may serve as the basis of designing conceptually interesting acoustic devices with unconventional functions.

Electric field-induced coherent control in GaAs: polarization dependence and electrical measurement [Invited].

PubMed

Wahlstrand, J K; Zhang, H; Choi, S B; Sipe, J E; Cundiff, S T

2011-11-07

A static electric field enables coherent control of the photoexcited carrier density in a semiconductor through the interference of one- and two-photon absorption. An experiment using optical detection is described. The polarization dependence of the signal is consistent with a calculation using a 14-band k · p model for GaAs. We also describe an electrical measurement. A strong enhancement of the phase-dependent photocurrent through a metal-semiconductor-metal structure is observed when a bias of a few volts is applied. The dependence of the signal on bias and laser spot position is studied. The field-induced enhancement of the signal could increase the sensitivity of semiconductor-based carrier-envelope phase detectors, useful in stabilizing mode-locked lasers for use in frequency combs.

Dry Valleys, Antarctica

NASA Image and Video Library

2009-11-02

The McMurdo Dry Valleys are a row of valleys west of McMurdo Sound, Antarctica. They are so named because of their extremely low humidity and lack of snow and ice cover. This image was acquired December 8, 2002 by NASA Terra spacecraft.

Model for Ultrafast Carrier Scattering in Semiconductors

DTIC Science & Technology

2012-11-14

energy transfer between semi-classical carrier drift-diffusion under an electric field and quantum kinetics of interband /intersubband transitions...from an electron during each phonon-emission event. The net rate of phonon emission is determined by the Boltzmann scattering equation which depends ...energy-drift term under a strong dc field was demonstrated to reduce the field- dependent drift velocity and mobility. The Doppler shift in the energy

Plasmon-induced carrier polarization in semiconductor nanocrystals.

PubMed

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V

2018-06-01

Spintronics 1 and valleytronics 2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals 3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In 2 O 3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes 11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

Plasmon-induced carrier polarization in semiconductor nanocrystals

NASA Astrophysics Data System (ADS)

Yin, Penghui; Tan, Yi; Fang, Hanbing; Hegde, Manu; Radovanovic, Pavle V.

2018-06-01

Spintronics1 and valleytronics2 are emerging quantum electronic technologies that rely on using electron spin and multiple extrema of the band structure (valleys), respectively, as additional degrees of freedom. There are also collective properties of electrons in semiconductor nanostructures that potentially could be exploited in multifunctional quantum devices. Specifically, plasmonic semiconductor nanocrystals3-10 offer an opportunity for interface-free coupling between a plasmon and an exciton. However, plasmon-exciton coupling in single-phase semiconductor nanocrystals remains challenging because confined plasmon oscillations are generally not resonant with excitonic transitions. Here, we demonstrate a robust electron polarization in degenerately doped In2O3 nanocrystals, enabled by non-resonant coupling of cyclotron magnetoplasmonic modes11 with the exciton at the Fermi level. Using magnetic circular dichroism spectroscopy, we show that intrinsic plasmon-exciton coupling allows for the indirect excitation of the magnetoplasmonic modes, and subsequent Zeeman splitting of the excitonic states. Splitting of the band states and selective carrier polarization can be manipulated further by spin-orbit coupling. Our results effectively open up the field of plasmontronics, which involves the phenomena that arise from intrinsic plasmon-exciton and plasmon-spin interactions. Furthermore, the dynamic control of carrier polarization is readily achieved at room temperature, which allows us to harness the magnetoplasmonic mode as a new degree of freedom in practical photonic, optoelectronic and quantum-information processing devices.

Modeling and visualization of carrier motion in organic films by optical second harmonic generation and Maxwell-displacement current

NASA Astrophysics Data System (ADS)

Iwamoto, Mitsumasa; Manaka, Takaaki; Taguchi, Dai

2015-09-01

The probing and modeling of carrier motions in materials as well as in electronic devices is a fundamental research subject in science and electronics. According to the Maxwell electromagnetic field theory, carriers are a source of electric field. Therefore, by probing the dielectric polarization caused by the electric field arising from moving carriers and dipoles, we can find a way to visualize the carrier motions in materials and in devices. The techniques used here are an electrical Maxwell-displacement current (MDC) measurement and a novel optical method based on the electric field induced optical second harmonic generation (EFISHG) measurement. The MDC measurement probes changes of induced charge on electrodes, while the EFISHG probes nonlinear polarization induced in organic active layers due to the coupling of electron clouds of molecules and electro-magnetic waves of an incident laser beam in the presence of a DC field caused by electrons and holes. Both measurements allow us to probe dynamical carrier motions in solids through the detection of dielectric polarization phenomena originated from dipolar motions and electron transport. In this topical review, on the basis of Maxwell’s electro-magnetism theory of 1873, which stems from Faraday’s idea, the concept for probing electron and hole transport in solids by using the EFISHG is discussed in comparison with the conventional time of flight (TOF) measurement. We then visualize carrier transit in organic devices, i.e. organic field effect transistors, organic light emitting diodes, organic solar cells, and others. We also show that visualizing an EFISHG microscopic image is a novel way for characterizing anisotropic carrier transport in organic thin films. We also discuss the concept of the detection of rotational dipolar motions in monolayers by means of the MDC measurement, which is capable of probing the change of dielectric spontaneous polarization formed by dipoles in organic monolayers. Finally we

Phonon assisted carrier motion on the Wannier-Stark ladder

NASA Astrophysics Data System (ADS)

Cheung, Alfred; Berciu, Mona

2014-03-01

It is well known that at zero temperature and in the absence of electron-phonon coupling, the presence of an electric field leads to localization of carriers residing in a single band of finite bandwidth. In this talk, we will present an implementation of the self-consistent Born approximation (SCBA) to study the effect of weak electron-phonon coupling on the motion of a carrier in a biased system. At moderate and strong electron-phonon coupling, we supplement the SCBA, describing the string of phonons left behind by the carrier, with the momentum average approximation to describe the phonon cloud that accompanies the resulting polaron. We find that coupling to the lattice delocalizes the carrier, as expected, although long-lived resonances resulting from the Wannier-Stark states of the polaron may appear in certain regions of the parameter space. We end with a discussion of how our method can be improved to model disorder, other types of electron-phonon coupling, and electron-hole pair dissociation in a biased system.

Ground-water conditions in southern Utah Valley and Goshen Valley, Utah

USGS Publications Warehouse

Cordova, R.M.

1970-01-01

The investigation of ground-water conditions in southern Utah Valley and Goshen Valley, Utah, was made by the U. S. Geological Survey as part of a cooperative program with the Utah Department of Natural Resources, Division of Water Rights, to investigate the water resources of the State. The purposes of the investigation were to (1) determine the occurrence, recharge, discharge, movement, storage, chemical quality, and availability of ground water; (2) appraise the effects of increased withdrawal of water from wells; and (3) evaluate the effect of the Central Utah Project on the ground-water reservoir and the water supply of Utah Lake.This report presents a description of the aquifer system in the two valleys, a detailed description of the ground-water resources, and conclusions about potential development and its effect on the hydrologic conditions in the valleys. Two supplementary reports are products of the investigation. A basic-data release (Cordova, 1969) contains most of the basic data collected for the investigation, including well characteristics, drillers' logs, water levels, pumpage from wells, chemical analyses of ground and surface waters, and discharge of selected springs, drains, and streams. An interpretive report (Cordova and Mower, 1967) contains the results of a large-scale aquifer test in southern Utah Valley.

Defect-Induced Luminescence Quenching vs. Charge Carrier Generation of Phosphorus Incorporated in Silicon Nanocrystals as Function of Size.

PubMed

Hiller, Daniel; López-Vidrier, Julian; Gutsch, Sebastian; Zacharias, Margit; Nomoto, Keita; König, Dirk

2017-04-13

Phosphorus doping of silicon nanostructures is a non-trivial task due to problems with confinement, self-purification and statistics of small numbers. Although P-atoms incorporated in Si nanostructures influence their optical and electrical properties, the existence of free majority carriers, as required to control electronic properties, is controversial. Here, we correlate structural, optical and electrical results of size-controlled, P-incorporating Si nanocrystals with simulation data to address the role of interstitial and substitutional P-atoms. Whereas atom probe tomography proves that P-incorporation scales with nanocrystal size, luminescence spectra indicate that even nanocrystals with several P-atoms still emit light. Current-voltage measurements demonstrate that majority carriers must be generated by field emission to overcome the P-ionization energies of 110-260 meV. In absence of electrical fields at room temperature, no significant free carrier densities are present, which disproves the concept of luminescence quenching via Auger recombination. Instead, we propose non-radiative recombination via interstitial-P induced states as quenching mechanism. Since only substitutional-P provides occupied states near the Si conduction band, we use the electrically measured carrier density to derive formation energies of ~400 meV for P-atoms on Si nanocrystal lattice sites. Based on these results we conclude that ultrasmall Si nanovolumes cannot be efficiently P-doped.

Analysis of Mining-induced Valley Closure Movements

NASA Astrophysics Data System (ADS)

Zhang, C.; Mitra, R.; Oh, J.; Hebblewhite, B.

2016-05-01

Valley closure movements have been observed for decades in Australia and overseas when underground mining occurred beneath or in close proximity to valleys and other forms of irregular topographies. Valley closure is defined as the inward movements of the valley sides towards the valley centreline. Due to the complexity of the local geology and the interplay between several geological, topographical and mining factors, the underlying mechanisms that actually cause this behaviour are not completely understood. A comprehensive programme of numerical modelling investigations has been carried out to further evaluate and quantify the influence of a number of these mining and geological factors and their inter-relationships. The factors investigated in this paper include longwall positional factors, horizontal stress, panel width, depth of cover and geological structures around the valley. It is found that mining in a series passing beneath the valley dramatically increases valley closure, and mining parallel to valley induces much more closure than other mining orientations. The redistribution of horizontal stress and influence of mining activity have also been recognised as important factors promoting valley closure, and the effect of geological structure around the valley is found to be relatively small. This paper provides further insight into both the valley closure mechanisms and how these mechanisms should be considered in valley closure prediction models.

The Inter-Valley Soil Comparative Survey: the ecology of Dry Valley edaphic microbial communities

PubMed Central

Lee, Charles K; Barbier, Béatrice A; Bottos, Eric M; McDonald, Ian R; Cary, Stephen Craig

2012-01-01

Recent applications of molecular genetics to edaphic microbial communities of the McMurdo Dry Valleys and elsewhere have rejected a long-held belief that Antarctic soils contain extremely limited microbial diversity. The Inter-Valley Soil Comparative Survey aims to elucidate the factors shaping these unique microbial communities and their biogeography by integrating molecular genetic approaches with biogeochemical analyses. Although the microbial communities of Dry Valley soils may be complex, there is little doubt that the ecosystem's food web is relatively simple, and evidence suggests that physicochemical conditions may have the dominant role in shaping microbial communities. To examine this hypothesis, bacterial communities from representative soil samples collected in four geographically disparate Dry Valleys were analyzed using molecular genetic tools, including pyrosequencing of 16S rRNA gene PCR amplicons. Results show that the four communities are structurally and phylogenetically distinct, and possess significantly different levels of diversity. Strikingly, only 2 of 214 phylotypes were found in all four valleys, challenging a widespread assumption that the microbiota of the Dry Valleys is composed of a few cosmopolitan species. Analysis of soil geochemical properties indicated that salt content, alongside altitude and Cu2+, was significantly correlated with differences in microbial communities. Our results indicate that the microbial ecology of Dry Valley soils is highly localized and that physicochemical factors potentially have major roles in shaping the microbiology of ice-free areas of Antarctica. These findings hint at links between Dry Valley glacial geomorphology and microbial ecology, and raise previously unrecognized issues related to environmental management of this unique ecosystem. PMID:22170424

27 CFR 9.132 - Rogue Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Rogue Valley. 9.132... Rogue Valley. (a) Name. The name of the viticultural area described in this section is “Rouge Valley.” (b) Approved map. The appropriate map for determining the boundaries of the Rogue Valley viticultural...

Charge carrier dynamics in organic semiconductors and their donor-acceptor composites: Numerical modeling of time-resolved photocurrent

NASA Astrophysics Data System (ADS)

Johnson, Brian; Kendrick, Mark J.; Ostroverkhova, Oksana

2013-09-01

We present a model that describes nanosecond (ns) time-scale photocurrent dynamics in functionalized anthradithiophene (ADT) films and ADT-based donor-acceptor (D/A) composites. By fitting numerically simulated photocurrents to experimental data, we quantify contributions of multiple pathways of charge carrier photogeneration to the photocurrent, as well as extract parameters that characterize charge transport (CT) in organic films including charge carrier mobilities, trap densities, hole trap depth, and trapping and recombination rates. In pristine ADT films, simulations revealed two competing charge photogeneration pathways: fast, occurring on picosecond (ps) or sub-ps time scales with efficiencies below 10%, and slow, which proceeds at the time scale of tens of nanoseconds, with efficiencies of about 11%-12%, at the applied electric fields of 40-80 kV/cm. The relative contribution of these pathways to the photocurrent was electric field dependent, with the contribution of the fast process increasing with applied electric field. However, the total charge photogeneration efficiency was weakly electric field dependent exhibiting values of 14%-20% of the absorbed photons. The remaining 80%-86% of the photoexcitation did not contribute to charge carrier generation at these time scales. In ADT-based D/A composites with 2 wt.% acceptor concentration, an additional pathway of charge photogeneration that proceeds via CT exciton dissociation contributed to the total charge photogeneration. In the composite with the functionalized pentacene (Pn) acceptor, which exhibits strong exciplex emission from a tightly bound D/A CT exciton, the contribution of the CT state to charge generation was small, ˜8%-12% of the total number of photogenerated charge carriers, dependent on the electric field. In contrast, in the composite with PCBM acceptor, the CT state contributed about a half of all photogenerated charge carriers. In both D/A composites, the charge carrier mobilities were

Optimal Decentralized Protocol for Electric Vehicle Charging

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gan, LW; Topcu, U; Low, SH

We propose a decentralized algorithm to optimally schedule electric vehicle (EV) charging. The algorithm exploits the elasticity of electric vehicle loads to fill the valleys in electric load profiles. We first formulate the EV charging scheduling problem as an optimal control problem, whose objective is to impose a generalized notion of valley-filling, and study properties of optimal charging profiles. We then give a decentralized algorithm to iteratively solve the optimal control problem. In each iteration, EVs update their charging profiles according to the control signal broadcast by the utility company, and the utility company alters the control signal to guidemore » their updates. The algorithm converges to optimal charging profiles (that are as "flat" as they can possibly be) irrespective of the specifications (e.g., maximum charging rate and deadline) of EVs, even if EVs do not necessarily update their charging profiles in every iteration, and use potentially outdated control signal when they update. Moreover, the algorithm only requires each EV solving its local problem, hence its implementation requires low computation capability. We also extend the algorithm to track a given load profile and to real-time implementation.« less

Measurement of carrier transport and recombination parameter in heavily doped silicon

NASA Technical Reports Server (NTRS)

Swanson, Richard M.

1986-01-01

The minority carrier transport and recombination parameters in heavily doped bulk silicon were measured. Both Si:P and Si:B with bulk dopings from 10 to the 17th and 10 to the 20th power/cu cm were studied. It is shown that three parameters characterize transport in bulk heavily doped Si: the minority carrier lifetime tau, the minority carrier mobility mu, and the equilibrium minority carrier density of n sub 0 and p sub 0 (in p-type and n-type Si respectively.) However, dc current-voltage measurements can never measure all three of these parameters, and some ac or time-transient experiment is required to obtain the values of these parameters as a function of dopant density. Using both dc electrical measurements on bipolar transitors with heavily doped base regions and transients optical measurements on heavily doped bulk and epitaxially grown samples, lifetime, mobility, and bandgap narrowing were measured as a function of both p and n type dopant densities. Best fits of minority carrier mobility, bandgap narrowing and lifetime as a function of doping density (in the heavily doped range) were constructed to allow accurate modeling of minority carrier transport in heavily doped Si.

Chemical Looping Technology: Oxygen Carrier Characteristics.

PubMed

Luo, Siwei; Zeng, Liang; Fan, Liang-Shih

2015-01-01

Chemical looping processes are characterized as promising carbonaceous fuel conversion technologies with the advantages of manageable CO2 capture and high energy conversion efficiency. Depending on the chemical looping reaction products generated, chemical looping technologies generally can be grouped into two types: chemical looping full oxidation (CLFO) and chemical looping partial oxidation (CLPO). In CLFO, carbonaceous fuels are fully oxidized to CO2 and H2O, as typically represented by chemical looping combustion with electricity as the primary product. In CLPO, however, carbonaceous fuels are partially oxidized, as typically represented by chemical looping gasification with syngas or hydrogen as the primary product. Both CLFO and CLPO share similar operational features; however, the optimum process configurations and the specific oxygen carriers used between them can vary significantly. Progress in both CLFO and CLPO is reviewed and analyzed with specific focus on oxygen carrier developments that characterize these technologies.

Hydrogeologic framework and estimates of groundwater storage for the Hualapai Valley, Detrital Valley, and Sacramento Valley basins, Mohave County, Arizona

USGS Publications Warehouse

Truini, Margot; Beard, L. Sue; Kennedy, Jeffrey; Anning, Dave W.

2013-01-01

We have investigated the hydrogeology of the Hualapai Valley, Detrital Valley, and Sacramento Valley basins of Mohave County in northwestern Arizona to develop a better understanding of groundwater storage within the basin fill aquifers. In our investigation we used geologic maps, well-log data, and geophysical surveys to delineate the sedimentary textures and lithology of the basin fill. We used gravity data to construct a basin geometry model that defines smaller subbasins within the larger basins, and airborne transient-electromagnetic modeled results along with well-log lithology data to infer the subsurface distribution of basin fill within the subbasins. Hydrogeologic units (HGUs) are delineated within the subbasins on the basis of the inferred lithology of saturated basin fill. We used the extent and size of HGUs to estimate groundwater storage to depths of 400 meters (m) below land surface (bls). The basin geometry model for the Hualapai Valley basin consists of three subbasins: the Kingman, Hualapai, and southern Gregg subbasins. In the Kingman subbasin, which is estimated to be 1,200 m deep, saturated basin fill consists of a mixture of fine- to coarse-grained sedimentary deposits. The Hualapai subbasin, which is the largest of the subbasins, contains a thick halite body from about 400 m to about 4,300 m bls. Saturated basin fill overlying the salt body consists predominately of fine-grained older playa deposits. In the southern Gregg subbasin, which is estimated to be 1,400 m deep, saturated basin fill is interpreted to consist primarily of fine- to coarse-grained sedimentary deposits. Groundwater storage to 400 m bls in the Hualapai Valley basin is estimated to be 14.1 cubic kilometers (km3). The basin geometry model for the Detrital Valley basin consists of three subbasins: northern Detrital, central Detrital, and southern Detrital subbasins. The northern and central Detrital subbasins are characterized by a predominance of playa evaporite and fine

Fretted Terrain Valleys

NASA Technical Reports Server (NTRS)

2004-01-01

30 October 2004 This Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows shallow tributary valleys in the Ismenius Lacus fretted terrain region of northern Arabia Terra. These valleys exhibit a variety of typical fretted terrain valley wall and floor textures, including a lineated, pitted material somewhat reminiscent of the surface of a brain. Origins for these features are still being debated within the Mars science community; there are no clear analogs to these landforms on Earth. This image is located near 39.9oN, 332.1oW. The picture covers an area about 3 km (1.9 mi) wide. Sunlight illuminates the scene from the lower left.

Audiomagnetotelluric investigation of Snake Valley, eastern Nevada and western Utah

USGS Publications Warehouse

McPhee, Darcy K.; Pari, Keith; Baird, Frank

2009-01-01

As support for an exploratory well-drilling and hydraulic-testing program, AMT data were collected using a Geometrics Stratagem EH4 system along four profiles that extend roughly east-west from the southern Snake Range into Snake Valley. The profiles range from 3 to 5 kilometers in length, and station spacing was 200 to 400 meters. Two-dimensional inverse models were computed using the data from the transverse-electric (TE), transverse-magnetic (TM), and combined (TE+TM) mode using a conjugate gradient, finite-difference method. Interpretation of the 2-D AMT models defines several faults, some of which may influence ground-water flow in the basins, as well as identify underlying Paleozoic carbonate and clastic rocks and the thickness of basin-fill sediments. These AMT data and models, coupled with the geologic mapping and other surface geophysical methods, form the basis for identifying potential well sites and defining the subsurface structures and stratigraphy within Snake Valley.

The impact of hot charge carrier mobility on photocurrent losses in polymer-based solar cells

PubMed Central

Philippa, Bronson; Stolterfoht, Martin; Burn, Paul L.; Juška, Gytis; Meredith, Paul; White, Ronald D.; Pivrikas, Almantas

2014-01-01

A typical signature of charge extraction in disordered organic systems is dispersive transport, which implies a distribution of charge carrier mobilities that negatively impact on device performance. Dispersive transport has been commonly understood to originate from a time-dependent mobility of hot charge carriers that reduces as excess energy is lost during relaxation in the density of states. In contrast, we show via photon energy, electric field and film thickness independence of carrier mobilities that the dispersive photocurrent in organic solar cells originates not from the loss of excess energy during hot carrier thermalization, but rather from the loss of carrier density to trap states during transport. Our results emphasize that further efforts should be directed to minimizing the density of trap states, rather than controlling energetic relaxation of hot carriers within the density of states. PMID:25047086

Mapping Aquifer Systems with Airborne Electromagnetics in the Central Valley of California.

PubMed

Knight, Rosemary; Smith, Ryan; Asch, Ted; Abraham, Jared; Cannia, Jim; Viezzoli, Andrea; Fogg, Graham

2018-03-09

The passage of the Sustainable Groundwater Management Act in California has highlighted a need for cost-effective ways to acquire the data used in building conceptual models of the aquifer systems in the Central Valley of California. One approach would be the regional implementation of the airborne electromagnetic (AEM) method. We acquired 104 line-kilometers of data in the Tulare Irrigation District, in the Central Valley, to determine the depth of investigation (DOI) of the AEM method, given the abundance of electrically conductive clays, and to assess the usefulness of the method for mapping the hydrostratigraphy. The data were high quality providing, through inversion of the data, models displaying the variation in electrical resistivity to a depth of approximately 500 m. In order to transform the resistivity models to interpreted sections displaying lithology, we established the relationship between resistivity and lithology using collocated lithology logs (from drillers' logs) and AEM data. We modeled the AEM response and employed a bootstrapping approach to solve for the range of values in the resistivity model corresponding to sand and gravel, mixed coarse and fine, and clay in the unsaturated and saturated regions. The comparison between the resulting interpretation and an existing cross section demonstrates that AEM can be an effective method for mapping the large-scale hydrostratigraphy of aquifer systems in the Central Valley. The methods employed and developed in this study have widespread application in the use of the AEM method for groundwater management in similar geologic settings. © 2018 The Authors. Groundwater published by Wiley Periodicals, Inc. on behalf of National Ground Water Association.

GHG and black carbon emission inventories from Mezquital Valley: The main energy provider for Mexico Megacity.

PubMed

Montelongo-Reyes, M M; Otazo-Sánchez, E M; Romo-Gómez, C; Gordillo-Martínez, A J; Galindo-Castillo, E

2015-09-15

The greenhouse gases and black carbon emission inventory from IPCC key category Energy was accomplished for the Mezquital Valley, one of the most polluted regions in Mexico, as the Mexico City wastewater have been continuously used in agricultural irrigation for more than a hundred years. In addition, thermoelectric, refinery, cement and chemistry industries are concentrated in the southern part of the valley, near Mexico City. Several studies have reported air, soil, and water pollution data and its main sources for the region. Paradoxically, these sources contaminate the valley, but boosted its economic development. Nevertheless, no research has been done concerning GHG emissions, or climate change assessment. This paper reports inventories performed by the 1996 IPCC methodology for the baseline year 2005. Fuel consumption data were derived from priority sectors such as electricity generation, refineries, manufacturing & cement industries, transportation, and residential use. The total CO2 emission result was 13,894.9 Gg, which constituted three-quarters of Hidalgo statewide energy category. The principal CO2 sources were energy transformation (69%) and manufacturing (19%). Total black carbon emissions were estimated by a bottom-up method at 0.66 Gg. The principal contributor was on-road transportation (37%), followed by firewood residential consumption (26%) and cocked brick manufactures (22%). Non-CO2 gas emissions were also significant, particularly SO2 (255.9 Gg), which accounts for 80% of the whole Hidalgo State emissions. Results demonstrated the negative environmental impact on Mezquital Valley, caused by its role as a Megacity secondary fuel and electricity provider, as well as by the presence of several cement industries. Copyright © 2015 Elsevier B.V. All rights reserved.

Geologic history of the Yosemite Valley

USGS Publications Warehouse

Matthes, Francois E.

1930-01-01

Projection of the longitudinal profiles of these hanging valleys forward to the axis of the Merced Canyon shows that they are closely accordant in height. Their profiles indicate a series of points on a former profile of the Merced with respect to which the side streams had graded their courses prior to the last uplift. This old profile can be extended upward into the glaciated part of the Merced Canyon above El Portal and even into the profoundly glaciated Yosemite Valley, accordant points being furnished by a number of hanging side valleys (due allowance being made for glacial erosion suffered by those valleys). However, not all the hanging valleys of the Yosemite region are accordant with this set. Several of them, including the upland valley of Yosemite Creek, constitute a separate set indicating another old profile of the Merced at a level 600 to 1,000 feet higher than the first. Others, including the hanging gulch of lower Bridalveil Creek, point to an old profile of the Merced about 1,200 feet lower than the first. There are thus three distinct sets of hanging valleys produced in three cycles of stream erosion. The valleys of the upper set, like those of the middle set, were left hanging as a result of rapid trenching by the Merced induced by an uplift of the range, there having been two such uplifts. Only the valleys of the lower set hang because of glacial deepening and widening of the Yosemite Valley, the cycle in which they were cut having been interrupted by the advent of the Pleistocene glaciers. They consequently indicate the preglacial depth of the Yosemite Valley. That depth, measured from the brow of El Capitan, was about 2,400 feet; measured from the rim at Glacier Point it was about 2,000 feet.

Electron transport and electron energy distributions within the wurtzite and zinc-blende phases of indium nitride: Response to the application of a constant and uniform electric field

DOE Office of Scientific and Technical Information (OSTI.GOV)

Siddiqua, Poppy; Hadi, Walid A.; Salhotra, Amith K.

2015-03-28

Within the framework of an ensemble semi-classical three-valley Monte Carlo electron transport simulation approach, we critically contrast the nature of the electron transport that occurs within the wurtzite and zinc-blende phases of indium nitride in response to the application of a constant and uniform electric field. We use the electron energy distribution and its relationship with the electron transport characteristics in order to pursue this analysis. For the case of zinc-blende indium nitride, only a peak corresponding to the electrons within the lowest energy conduction band valley is observed, this peak being seen to broaden and shift to higher energiesmore » in response to increases in the applied electric field strength, negligible amounts of upper energy conduction band valley occupancy being observed. In contrast, for the case of wurtzite indium nitride, in addition to the aforementioned lowest energy conduction band valley peak in the electron energy distribution, and its broadening and shifting to higher energies in response to increases in the applied electric field strength, beyond a certain critical electric field strength, 30 kV/cm for the case of this particular material, upper energy conduction band valley occupancy is observed, this occupancy being further enhanced in response to further increases in the applied electric field strength. Reasons for these results are provided. The potential for device consequences is then commented upon.« less

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE PAGES

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra; ...

2017-10-23

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p–n junction nanowires

DOE Office of Scientific and Technical Information (OSTI.GOV)

Delker, Collin James; Yoo, Jink Young; Bussmann, Ezra

Here, we investigate carrier transport in silicon–germanium nanowires with an axial p–n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source–drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source–drain configuration, current is limited by the nickel/n-side Schottky contact.

Dual-gate operation and carrier transport in SiGe p-n junction nanowires

NASA Astrophysics Data System (ADS)

Delker, C. J.; Yoo, J. Y.; Bussmann, E.; Swartzentruber, B. S.; Harris, C. T.

2017-11-01

We investigate carrier transport in silicon-germanium nanowires with an axial p-n junction doping profile by fabricating these wires into transistors that feature separate top gates over each doping segment. By independently biasing each gate, carrier concentrations in the n- and p-side of the wire can be modulated. For these devices, which were fabricated with nickel source-drain electrical contacts, holes are the dominant charge carrier, with more favorable hole injection occurring on the p-side contact. Channel current exhibits greater sensitivity to the n-side gate, and in the reverse biased source-drain configuration, current is limited by the nickel/n-side Schottky contact.

Foothill Transit Battery Electric Bus Demonstration Results : Second Report

DOT National Transportation Integrated Search

2017-06-01

This report summarizes results of a battery electric bus (BEB) evaluation at Foothill Transit, located in the San Gabriel and Pomona Valley region of Los Angeles County, California. Foothill Transit began a demonstration of three Proterra BEBs in Oct...

76 FR 22746 - Conecuh Valley Railway, LLC-Acquisition and Operation Exemption-Conecuh Valley Railroad Co., Inc.

Federal Register 2010, 2011, 2012, 2013, 2014

2011-04-22

... Railway, LLC--Acquisition and Operation Exemption--Conecuh Valley Railroad Co., Inc. Conecuh Valley Railway, LLC (CVR), a noncarrier, has filed a verified notice of exemption under 49 CFR 1150.31 to acquire from Conecuh Valley Railroad Co., Inc. (COEH), and to operate [[Page 22747

Valley filters, accumulators, and switches induced in graphene quantum dots by lines of adsorbed hydrogen atoms

NASA Astrophysics Data System (ADS)

Azari, Mohammadhadi; Kirczenow, George

2018-06-01

We present electronic structure and quantum transport calculations that predict conducting channels induced in graphene quantum dots by lines of adsorbed hydrogen atoms to function as highly efficient, experimentally realizable valley filters, accumulators, and switches. The underlying physics is an interesting property of graphene Dirac point resonances (DPRs) that is revealed here, namely, that an electric current passing through a DPR-mediated conducting channel in a given direction is carried by electrons of only one of the two graphene valleys. Our predictions apply to lines of hydrogen atoms adsorbed on graphene quantum dots that are either free standing or supported on a hexagonal boron nitride substrate.

Direct measurement of the electric-field distribution in a light-emitting electrochemical cell

NASA Astrophysics Data System (ADS)

Slinker, Jason D.; Defranco, John A.; Jaquith, Michael J.; Silveira, William R.; Zhong, Yu-Wu; Moran-Mirabal, Jose M.; Craighead, Harold G.; Abruña, Héctor D.; Marohn, John A.; Malliaras, George G.

2007-11-01

The interplay between ionic and electronic charge carriers in mixed conductors offers rich physics and unique device potential. In light-emitting electrochemical cells (LEECs), for example, the redistribution of ions assists the injection of electronic carriers and leads to efficient light emission. The mechanism of operation of LEECs has been controversial, as there is no consensus regarding the distribution of electric field in these devices. Here, we probe the operation of LEECs using electric force microscopy on planar devices. We show that obtaining the appropriate boundary conditions is essential for capturing the underlying device physics. A patterning scheme that avoids overlap between the mixed-conductor layer and the metal electrodes enabled the accurate in situ measurement of the electric-field distribution. The results show that accumulation and depletion of mobile ions near the electrodes create high interfacial electric fields that enhance the injection of electronic carriers.

Silicification of holocene soils in northern Monitor Valley, Nevada

NASA Astrophysics Data System (ADS)

Chadwick, O. A.; Hendricks, D. M.; Nettleton, W. D.

1989-02-01

Chemical, physical, and microscopic data for three soils in the northern Monitor Valley are analyzed. The soils ranked in order of increasing age are: Mule, Rotinom, and Nayped. The procedures and techniques used to obtain and study that data are described. It is observed that: (1) redistribution of carbonate is detectable in all soils; (2) clay illuviation is insignificant in the Mule soil, weak but identifiable in the Rotinom soil, and significant in the Nayped soil; and (3) the maximum sodium adsorption ratio (SAR) and electrical conductivity (EC) for the Mule soil is between 64-89 cm, for the Rotinom soil the values are below 100 cm, and for Nayped the maximum SAR values range from 51-117 cm and maximum EC values are between 117-152 cm. The relationship between volcanic glass weathering and the amount of silica cementation in the soils is studied. It is noted that silicification of Monitor Valley holocene soils is due to there being enough moisture to release silica from volcanic glass, but not enough to leach the weathering products from the profile.

Silicification of holocene soils in northern Monitor Valley, Nevada

NASA Technical Reports Server (NTRS)

Chadwick, O. A.; Hendricks, D. M.; Nettleton, W. D.

1989-01-01

Chemical, physical, and microscopic data for three soils in the northern Monitor Valley are analyzed. The soils ranked in order of increasing age are: Mule, Rotinom, and Nayped. The procedures and techniques used to obtain and study that data are described. It is observed that: (1) redistribution of carbonate is detectable in all soils; (2) clay illuviation is insignificant in the Mule soil, weak but identifiable in the Rotinom soil, and significant in the Nayped soil; and (3) the maximum sodium adsorption ratio (SAR) and electrical conductivity (EC) for the Mule soil is between 64-89 cm, for the Rotinom soil the values are below 100 cm, and for Nayped the maximum SAR values range from 51-117 cm and maximum EC values are between 117-152 cm. The relationship between volcanic glass weathering and the amount of silica cementation in the soils is studied. It is noted that silicification of Monitor Valley holocene soils is due to there being enough moisture to release silica from volcanic glass, but not enough to leach the weathering products from the profile.

Grizzly Valley fault system, Sierra Valley, CA

USGS Publications Warehouse

Gold, Ryan; Stephenson, William; Odum, Jack; Briggs, Rich; Crone, Anthony; Angster, Steve

2012-01-01

The Grizzly Valley fault system (GVFS) strikes northwestward across Sierra Valley, California and is part of a network of active, dextral strike-slip faults in the northern Walker Lane (Figure 1). To investigate Quaternary motion across the GVFS, we analyzed high-resolution (0.25 m) airborne LiDAR data (Figure 2) in combination with six, high-resolution, P-wave, seismic-reflection profiles [Gold and others, 2012]. The 0.5- to 2.0-km-long seismic-reflection profiles were sited orthogonal to suspected tectonic lineaments identified from previous mapping and our analysis of airborne LiDAR data. To image the upper 400–700 m of subsurface stratigraphy of Sierra Valley (Figure 3), we used a 230-kg accelerated weight drop source. Geophone spacing ranged from 2 to 5 m and shots were co-located with the geophones. The profiles reveal a highly reflective, deformed basal marker that we interpret to be the top of Tertiary volcanic rocks, overlain by a 120- to 300-m-thick suite of subhorizontal reflectors we interpret as Plio-Pleistocene lacustrine deposits. Three profiles image the principle active trace of the GVFS, which is a steeply dipping fault zone that offsets the volcanic rocks and the basin fill (Figures 4 & 5).

Lessons from the Tennessee Valley Authority

NASA Astrophysics Data System (ADS)

Kitchens, Carl Thomas

This dissertation is a program evaluation of the Tennessee Valley Authority (TVA) the largest publicly owned utility in the United States. The first essay in this dissertation examines the TVA's use of eminent domain in order to acquire property for the construction of reservoirs. It develops a new model of asymmetric information and then tests the model predictions using property level data from TVA property purchases in the 1930's. The second essay of this dissertation examines the unintended consequences of reservoir development my examining changes in the malaria rate associated with TVA reservoirs. Using panel data methods, I find that the presence of a TVA reservoir leads to large increases in the malaria mortality and morbidity rate, which cost up to 30 percent of TVA federal appropriations. The final essay in this dissertation examines the impact of TVA electrification programs on economic growth. It combines archival and panel data methods to show that contrary to the historical account, TVA electric rates did not differ substantially from the rates charged by private utilities, and secondly, shows that counties that had electricity contracts with the TVA did not have differential economic growth rates for a variety of economic outcomes. In order to control for selection into contracts, I adopt an instrumental variables strategy based on the cost of electric service.

Topological Valley Currents in Gapped Dirac Materials

NASA Astrophysics Data System (ADS)

Lensky, Yuri D.; Song, Justin C. W.; Samutpraphoot, Polnop; Levitov, Leonid S.

2015-06-01

Gapped 2D Dirac materials, in which inversion symmetry is broken by a gap-opening perturbation, feature a unique valley transport regime. Topological valley currents in such materials are dominated by bulk currents produced by electronic states just beneath the gap rather than by edge modes. The system ground state hosts dissipationless persistent valley currents existing even when topologically protected edge modes are absent. Valley currents induced by an external bias are characterized by a quantized half-integer valley Hall conductivity. The undergap currents dominate magnetization and the charge Hall effect in a light-induced valley-polarized state.

Field Surveys, IOC Valleys. Volume III, Part II. Cultural Resources Survey, Pine and Wah Wah Valleys, Utah.

DTIC Science & Technology

1981-08-01

valleys are typical of the Basin and Range Province, characterized by parallel, north-south trending mountain ranges, separated by hydrologically closed... basins . Pine and Wah Wah valleys each have hardpan-playas in their lowest areas. State Highway 21 runs roughly northwest-southeast through both val...have been important for prehis- toric and historic use of the area. Pine Valley: Pine and Wah Wah valleys are closed alluvial basins . The central part

Charge carrier mobility in thin films of organic semiconductors by the gated van der Pauw method

PubMed Central

Rolin, Cedric; Kang, Enpu; Lee, Jeong-Hwan; Borghs, Gustaaf; Heremans, Paul; Genoe, Jan

2017-01-01

Thin film transistors based on high-mobility organic semiconductors are prone to contact problems that complicate the interpretation of their electrical characteristics and the extraction of important material parameters such as the charge carrier mobility. Here we report on the gated van der Pauw method for the simple and accurate determination of the electrical characteristics of thin semiconducting films, independently from contact effects. We test our method on thin films of seven high-mobility organic semiconductors of both polarities: device fabrication is fully compatible with common transistor process flows and device measurements deliver consistent and precise values for the charge carrier mobility and threshold voltage in the high-charge carrier density regime that is representative of transistor operation. The gated van der Pauw method is broadly applicable to thin films of semiconductors and enables a simple and clean parameter extraction independent from contact effects. PMID:28397852

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS2

NASA Astrophysics Data System (ADS)

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S.; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J.; Schuck, P. James

2017-08-01

Optoelectronic excitations in monolayer MoS2 manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena—critical to both many-body physics exploration and device applications—presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Optically Discriminating Carrier-Induced Quasiparticle Band Gap and Exciton Energy Renormalization in Monolayer MoS_{2}.

PubMed

Yao, Kaiyuan; Yan, Aiming; Kahn, Salman; Suslu, Aslihan; Liang, Yufeng; Barnard, Edward S; Tongay, Sefaattin; Zettl, Alex; Borys, Nicholas J; Schuck, P James

2017-08-25

Optoelectronic excitations in monolayer MoS_{2} manifest from a hierarchy of electrically tunable, Coulombic free-carrier and excitonic many-body phenomena. Investigating the fundamental interactions underpinning these phenomena-critical to both many-body physics exploration and device applications-presents challenges, however, due to a complex balance of competing optoelectronic effects and interdependent properties. Here, optical detection of bound- and free-carrier photoexcitations is used to directly quantify carrier-induced changes of the quasiparticle band gap and exciton binding energies. The results explicitly disentangle the competing effects and highlight longstanding theoretical predictions of large carrier-induced band gap and exciton renormalization in two-dimensional semiconductors.

Free-carrier mobility in GaN in the presence of dislocation walls

NASA Astrophysics Data System (ADS)

Farvacque, J.-L.; Bougrioua, Z.; Moerman, I.

2001-03-01

The free-carrier mobility versus carrier density in n-type GaN grown by low-pressure metal-organic vapor- phase epitaxy on a sapphire substrate experiences a particular behavior that consists of the appearance of a sharp transition separating a low- from a high-mobility regime. This separation appears as soon as the carrier density exceeds a critical value that depends on the growth process. Using low-field electrical transport simulations, we show that this particular mobility behavior cannot be simply interpreted in terms of dislocation scattering or trapping mechanisms, but that it is also controlled by the collective effect of dislocation walls (the columnar structure). As the free-carrier density increases, the more efficient screening properties result in the transition from a barrier-controlled mobility regime to a pure-diffusion-process-controlled mobility regime. The model permits us to reproduce the experimental mobility collapse quantitatively.

Temperature dependence of exciton and charge carrier dynamics in organic thin films

NASA Astrophysics Data System (ADS)

Platt, A. D.; Kendrick, M. J.; Loth, M.; Anthony, J. E.; Ostroverkhova, O.

2011-12-01

We report on physical mechanisms behind the temperature-dependent optical absorption, photoluminescence (PL), and photoconductivity in spin-coated films of a functionalized anthradithiophene (ADT) derivative, ADT-triethylsilylethynyl (TES)-F, and its composites with C60 and another ADT derivative, ADT-TIPS-CN. Measurements of absorption and PL spectra, PL lifetimes, and transient photocurrent were performed at temperatures between 98 and 300 K as a function of applied electric field. In pristine ADT-TES-F films, absorptive and emissive species were identified to be disordered H aggregates whose properties are affected by static and dynamic disorder. The exciton bandwidths were ≤0.06 and ˜0.115 eV for absorptive and emissive aggregates, respectively, indicative of higher disorder in the emissive species. The exciton in the latter was found to be delocalized over approximately four to five molecules. The PL properties were significantly modified upon adding a guest molecule to the ADT-TES-F host. In ADT-TES-F/C60 composites, the PL was considerably quenched due to photoinduced electron transfer from ADT-TES-F to C60, while in ADT-TES-F/ADT-TIPS-CN blends, the PL was dominated by emission from an exciplex formed between ADT-TES-F and ADT-TIPS-CN molecules. In all materials, the PL quantum yield dramatically decreased as the temperature increased due to thermally activated nonradiative recombination. Considerable electric-field-induced PL quenching was observed at low temperatures at electric fields above ˜105 V/cm due to tunneling into dark states. No significant contribution of ADT-TES-F emissive exciton dissociation to transient photocurrent was observed. In all materials, charge carriers were photogenerated at sub-500-ps time scales, limited by the laser pulse width, with temperature- and electric-field-independent photogeneration efficiency. In ADT-TES-F/C60 (2%) composites, the photogeneration efficiency was a factor of 2-3 higher than that in pristine ADT

14 CFR 380.11 - Payment to direct air carrier(s).

Code of Federal Regulations, 2010 CFR

2010-01-01

... carrier(s). Except for air taxi operators and commuter air carriers (which are governed by 14 CFR 298.38) and Canadian charter air taxi operators (which are governed by 14 CFR 294.32), the direct air carrier...

14 CFR 380.11 - Payment to direct air carrier(s).

Code of Federal Regulations, 2011 CFR

2011-01-01

... carrier(s). Except for air taxi operators and commuter air carriers (which are governed by 14 CFR 298.38) and Canadian charter air taxi operators (which are governed by 14 CFR 294.32), the direct air carrier...

A landscape scale valley confinement algorithm: Delineating unconfined valley bottoms for geomorphic, aquatic, and riparian applications

Treesearch

David E. Nagel; John M. Buffington; Sharon L. Parkes; Seth Wenger; Jaime R. Goode

2014-01-01

Valley confinement is an important landscape characteristic linked to aquatic habitat, riparian diversity, and geomorphic processes. This report describes a GIS program called the Valley Confinement Algorithm (VCA), which identifies unconfined valleys in montane landscapes. The algorithm uses nationally available digital elevation models (DEMs) at 10-30 m resolution to...

Graphene Nanobubbles as Valley Filters and Beam Splitters

NASA Astrophysics Data System (ADS)

Settnes, Mikkel; Power, Stephen R.; Brandbyge, Mads; Jauho, Antti-Pekka

2016-12-01

The energy band structure of graphene has two inequivalent valleys at the K and K' points of the Brillouin zone. The possibility to manipulate this valley degree of freedom defines the field of valleytronics, the valley analogue of spintronics. A key requirement for valleytronic devices is the ability to break the valley degeneracy by filtering and spatially splitting valleys to generate valley polarized currents. Here, we suggest a way to obtain valley polarization using strain-induced inhomogeneous pseudomagnetic fields (PMFs) that act oppositely on the two valleys. Notably, the suggested method does not involve external magnetic fields, or magnetic materials, unlike previous proposals. In our proposal the strain is due to experimentally feasible nanobubbles, whose associated PMFs lead to different real space trajectories for K and K' electrons, thus allowing the two valleys to be addressed individually. In this way, graphene nanobubbles can be exploited in both valley filtering and valley splitting devices, and our simulations reveal that a number of different functionalities are possible depending on the deformation field.

Direct observation of the carrier transport process in InGaN quantum wells with a pn-junction

NASA Astrophysics Data System (ADS)

Wu, Haiyan; Ma, Ziguang; Jiang, Yang; Wang, Lu; Yang, Haojun; Li, Yangfeng; Zuo, Peng; Jia, Haiqiang; Wang, Wenxin; Zhou, Junming; Liu, Wuming; Chen, Hong

2016-11-01

A new mechanism of light-to-electricity conversion that uses InGaN/GaN QWs with a p-n junction is reported. According to the well established light-to-electricity conversion theory, quantum wells (QWs) cannot be used in solar cells and photodetectors because the photogenerated carriers in QWs usually relax to ground energy levels, owing to quantum confinement, and cannot form a photocurrent. We observe directly that more than 95% of the photoexcited carriers escape from InGaN/GaN QWs to generate a photocurrent, indicating that the thermionic emission and tunneling processes proposed previously cannot explain carriers escaping from QWs. We show that photoexcited carriers can escape directly from the QWs when the device is under working conditions. Our finding challenges the current theory and demonstrates a new prospect for developing highly efficient solar cells and photodetectors. Project supported by the National Natural Science Foundation of China (Grant Nos. 11574362, 61210014, and 11374340) and the Innovative Clean-energy Research and Application Program of Beijing Municipal Science and Technology Commission, China (Grant No. Z151100003515001).

The Long Valley Caldera GIS database

USGS Publications Warehouse

Battaglia, Maurizio; Williams, M.J.; Venezky, D.Y.; Hill, D.P.; Langbein, J.O.; Farrar, C.D.; Howle, J.F.; Sneed, M.; Segall, P.

2003-01-01

This database provides an overview of the studies being conducted by the Long Valley Observatory in eastern California from 1975 to 2001. The database includes geologic, monitoring, and topographic datasets related to Long Valley caldera. The CD-ROM contains a scan of the original geologic map of the Long Valley region by R. Bailey. Real-time data of the current activity of the caldera (including earthquakes, ground deformation and the release of volcanic gas), information about volcanic hazards and the USGS response plan are available online at the Long Valley observatory web page (http://lvo.wr.usgs.gov). If you have any comments or questions about this database, please contact the Scientist in Charge of the Long Valley observatory.

Reversible electron-hole separation in a hot carrier solar cell

NASA Astrophysics Data System (ADS)

Limpert, S.; Bremner, S.; Linke, H.

2015-09-01

Hot-carrier solar cells are envisioned to utilize energy filtering to extract power from photogenerated electron-hole pairs before they thermalize with the lattice, and thus potentially offer higher power conversion efficiency compared to conventional, single absorber solar cells. The efficiency of hot-carrier solar cells can be expected to strongly depend on the details of the energy filtering process, a relationship which to date has not been satisfactorily explored. Here, we establish the conditions under which electron-hole separation in hot-carrier solar cells can occur reversibly, that is, at maximum energy conversion efficiency. We thus focus our analysis on the internal operation of the hot-carrier solar cell itself, and in this work do not consider the photon-mediated coupling to the Sun. After deriving an expression for the voltage of a hot-carrier solar cell valid under conditions of both reversible and irreversible electrical operation, we identify separate contributions to the voltage from the thermoelectric effect and the photovoltaic effect. We find that, under specific conditions, the energy conversion efficiency of a hot-carrier solar cell can exceed the Carnot limit set by the intra-device temperature gradient alone, due to the additional contribution of the quasi-Fermi level splitting in the absorber. We also establish that the open-circuit voltage of a hot-carrier solar cell is not limited by the band gap of the absorber, due to the additional thermoelectric contribution to the voltage. Additionally, we find that a hot-carrier solar cell can be operated in reverse as a thermally driven solid-state light emitter. Our results help explore the fundamental limitations of hot-carrier solar cells, and provide a first step towards providing experimentalists with a guide to the optimal configuration of devices.

Characterization of Carrier Concentration and Mobility in n-type SiC Wafers Using Infrared Reflectance Spectroscopy

NASA Astrophysics Data System (ADS)

Narita, Katsutoshi; Hijikata, Yasuto; Yaguchi, Hiroyuki; Yoshida, Sadafumi; Nakashima, Shinichi

2004-08-01

We have estimated the free-carrier concentration and drift mobility in n-type 6H-SiC wafers in the carrier concentration range of 1017-1019 cm-3 from far- and mid-infrared (30-2000 cm-1) reflectance spectra obtained at room temperature. A modified classical dielectric function model was employed for the analysis. We found good agreement between the electrical properties derived from infrared reflectance spectroscopy and those derived from Hall effect measurements. We have demonstrated the spatial mapping of carrier concentration and mobility for commercially produced 2 inch SiC wafers.

27 CFR 9.78 - Ohio River Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Ohio River Valley. 9.78... River Valley. (a) Name. The name of the viticultural area described in this section is “Ohio River Valley.” (b) Approved maps. The approved maps for determining the boundary of the Ohio River Valley...

Valley dependent transport in graphene L junction

NASA Astrophysics Data System (ADS)

Chan, K. S.

2018-05-01

We studied the valley dependent transport in graphene L junctions connecting an armchair lead and a zigzag lead. The junction can be used in valleytronic devices and circuits. Electrons injected from the armchair lead into the junction is not valley polarized, but they can become valley polarized in the zigzag lead. There are Fermi energies, where the current in the zigzag lead is highly valley polarized and the junction is an efficient generator of valley polarized current. The features of the valley polarized current depend sensitively on the widths of the two leads, as well as the number of dimers in the armchair lead, because this number has a sensitive effect on the band structure of the armchair lead. When an external potential is applied to the junction, the energy range with high valley polarization is enlarged enhancing its function as a generator of highly valley polarized current. The scaling behavior found in other graphene devices is also found in L junctions, which means that the results presented here can be extended to junctions with larger dimensions after appropriate scaling of the energy.

Down in the Valley.

ERIC Educational Resources Information Center

Salter, Linda Graef

1999-01-01

Describes the partnerships formed by West Valley Mission Community College District (California) with its surrounding Silicon Valley business community in an effort to benefit workforce development. Asserts that community colleges are uniquely positioned to provide a lifelong education that will yield a skilled workforce to meet the needs of…

Hazardous Waste Cleanup: West Valley Demonstration Project USDOE in West Valley, New York

EPA Pesticide Factsheets

The U.S. Department of Energy's West Valley Demonstration Project is located at 10282 Rock Spring Road in West Valley, New York. This is a 167 acre, Department of Energy (DOE)-operated portion of a 3,300-acre site owned by the New York State Energy

Christmas Valley Renewable Energy Assessment

DOE Office of Scientific and Technical Information (OSTI.GOV)

Del Mar, Robert

In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. In partnership with the Oregon Military Department, the Department of Energy used the award to assess and evaluate renewable resources in a 2,622-acre location in Lake County, central Oregon, leading to future development of up to 200 MW of solar electricity. The Oregon Military Department (Military) acquired a large parcel of land located in south central Oregon. The landmore » was previously owned by the US Air Force and developed for an Over-the-Horizon Backscatter Radar Transmitter Facility, located about 10 miles east of the town of Christmas Valley. The Military is investigating a number of uses for the site, including Research and Development (R&D) laboratory, emergency response, military operations, developing renewable energy and related educational programs. One of the key potential uses would be for a large scale solar photovoltaic power plant. This is an attractive use because the site has excellent solar exposure; an existing strong electrical interconnection to the power grid; and a secure location at a moderate cost per acre. The project objectives include: 1. Site evaluation 2. Research and Development (R&D) facility analysis 3. Utility interconnection studies and agreements 4. Additional on-site renewable energy resources analysis 5. Community education, outreach and mitigation 6. Renewable energy and emergency readiness training program for veterans« less

Geological Carbon Sequestration in the Ohio River Valley: An Evaluation of Possible Target Formations

NASA Astrophysics Data System (ADS)

Dalton, T. A.; Daniels, J. J.

2009-12-01

The development of geological carbon sequestration within the Ohio River Valley is of major interest to the national electricity and coal industries because the Valley is home to a heavy concentration of coal-burning electricity generation plants and the infrastructure is impossible to eliminate in the short-term. It has been determined by Ohio's politicians and citizenry that the continued use of coal in this region until alternative energy supplies are available will be necessary over the next few years. Geologic sequestration is the only possible means of keeping the CO2 out of the atmosphere in the region. The cost of the sequestration effort greatly decreases CO2 emissions by sequestering CO2 directly on site of these plants, or by minimizing the distance between fossil-fueled generation and sequestration (i.e., by eliminating the cost of transportation of supercritical CO2 from plant to sequestration site). Thus, the practicality of CO2 geologic sequestration within the Ohio River Valley is central to the development of such a commercial effort. Though extensive work has been done by the Regional Partnerships of the DOE/NETL in the characterization of general areas for carbon sequestration throughout the nation, few projects have narrowed their focus into a single geologic region in order to evaluate the sites of greatest commercial potential. As an undergraduate of the Earth Sciences at Ohio State, I have engaged in thorough research to obtain a detailed understanding of the geology of the Ohio River Valley and its potential for commercial-scale carbon sequestration. Through this research, I have been able to offer an estimate of the areas of greatest interest for CO2 geologic sequestration. This research has involved petrological, mineralogical, geochemical, and geophysical analyses of four major reservoir formations within Ohio—the Rose Run, the Copper Ridge, the Clinton, and the Oriskany—along with an evaluation of the possible effects of injection

Semiconductor light source with electrically tunable emission wavelength

DOEpatents

Belenky, Gregory [Port Jefferson, NY; Bruno, John D [Bowie, MD; Kisin, Mikhail V [Centereach, NY; Luryi, Serge [Setauket, NY; Shterengas, Leon [Centereach, NY; Suchalkin, Sergey [Centereach, NY; Tober, Richard L [Elkridge, MD

2011-01-25

A semiconductor light source comprises a substrate, lower and upper claddings, a waveguide region with imbedded active area, and electrical contacts to provide voltage necessary for the wavelength tuning. The active region includes single or several heterojunction periods sandwiched between charge accumulation layers. Each of the active region periods comprises higher and lower affinity semiconductor layers with type-II band alignment. The charge carrier accumulation in the charge accumulation layers results in electric field build-up and leads to the formation of generally triangular electron and hole potential wells in the higher and lower affinity layers. Nonequillibrium carriers can be created in the active region by means of electrical injection or optical pumping. The ground state energy in the triangular wells and the radiation wavelength can be tuned by changing the voltage drop across the active region.

Origin of flatband voltage shift and unusual minority carrier generation in thermally grown GeO2/Ge metal-oxide-semiconductor devices

NASA Astrophysics Data System (ADS)

Hosoi, Takuji; Kutsuki, Katsuhiro; Okamoto, Gaku; Saito, Marina; Shimura, Takayoshi; Watanabe, Heiji

2009-05-01

Improvement in electrical properties of thermally grown GeO2/Ge metal-oxide-semiconductor (MOS) capacitors, such as significantly reduced flatband voltage (VFB) shift, small hysteresis, and minimized minority carrier response in capacitance-voltage (C-V) characteristics, has been demonstrated by in situ low temperature vacuum annealing prior to gate electrode deposition. Thermal desorption analysis has revealed that not only water but also hydrocarbons are easily infiltrated into GeO2 layers during air exposure and desorbed at around 300 °C, indicating that organic molecules within GeO2/Ge MOS structures are possible origins of electrical defects. The inversion capacitance, indicative of minority carrier generation, increases with air exposure time for Au/GeO2/Ge MOS capacitors, while maintaining an interface state density (Dit) of about a few 1011 cm-2 eV-1. Unusual increase in inversion capacitance was found to be suppressed by Al2O3 capping (Au/Al2O3/GeO2/Ge structures). This suggests that electrical defects induced outside the Au electrode by infiltrated molecules may enhance the minority carrier generation, and thus acting as a minority carrier source just like MOS field-effect transistors.

Rift Valley Fever Virus

USDA-ARS?s Scientific Manuscript database

Rift Valley fever virus (RVFV) is a mosquito-transmitted virus or arbovirus that is endemic in sub-Saharan Africa. In the last decade, Rift Valley fever (RVF) outbreaks have resulted in loss of human and animal life, as well as had significant economic impact. The disease in livestock is primarily a...

Optical and electrical stability of viral-templated copper sulfide (Cu1.8S) films

NASA Astrophysics Data System (ADS)

Shahriar Zaman, Mohammed; Bernard Grajeda, Gabriel; Haberer, Elaine D.

2014-04-01

The optical and electrical stabilities of viral-templated non-stoichiometric copper sulfide, digenite (Cu1.8S) films were investigated. The films were composed of large agglomerates of randomly aligned Cu1.8S-coated M13 filamentous phage. Free carrier optical absorption associated with localized surface plasmon resonance (LSPR) was observed in the near infrared spectral region, and the films were electrically active, displaying a linear current-voltage relationship. Under ambient conditions, the magnitude of the LSPR absorption increased, following a power law relationship with time, and the electrical resistance of viral-templated films decreased significantly. In contrast, the resistance of films stored under low oxygen, low humidity conditions experienced a smaller reduction in electrical resistance. Changes in optical and electrical film properties under ambient conditions were associated with an increase in free carrier concentration within the copper chalcogenide material due to oxygen exposure. X-ray photoelectron spectroscopy was used to relate this increase in free carrier concentration to compositional changes on the viral-templated material surface.

An evaluation of Skylab (EREP) remote sensing techniques applied to investigation of crustal structure. [Death Valley and Greenwater Valley (CA)

NASA Technical Reports Server (NTRS)

Bechtold, I. C. (Principal Investigator)

1974-01-01

The author has identified the following significant results. A study of Greenwater Valley indicates that the valley is bounded on the north and east by faults, on the south by a basement high, and on the west by the dip slope of the black mountains, movement of ground water from the valley is thus Movement of ground water from the valley is thus restricted, indicating the valley is a potential water reservoir.

Method of electric field flow fractionation wherein the polarity of the electric field is periodically reversed

DOEpatents

Stevens, Fred J.

1992-01-01

A novel method of electric field flow fractionation for separating solute molecules from a carrier solution is disclosed. The method of the invention utilizes an electric field that is periodically reversed in polarity, in a time-dependent, wave-like manner. The parameters of the waveform, including amplitude, frequency and wave shape may be varied to optimize separation of solute species. The waveform may further include discontinuities to enhance separation.

Built-in electric field thickness design for betavoltaic batteries

NASA Astrophysics Data System (ADS)

Haiyang, Chen; Darang, Li; Jianhua, Yin; Shengguo, Cai

2011-09-01

Isotope source energy deposition along the thickness direction of a semiconductor is calculated, based upon which an ideal short current is evaluated for betavoltaic batteries. Electron-hole pair recombination and drifting length in a PN junction built-in electric field are extracted by comparing the measured short currents with the ideal short currents. A built-in electric field thickness design principle is proposed for betavoltaic batteries: after measuring the energy deposition depth and the carrier drift length, the shorter one should then be chosen as the built-in electric field thickness. If the energy deposition depth is much larger than the carrier drift length, a multi-junction is preferred in betavoltaic batteries and the number of the junctions should be the value of the deposition depth divided by the drift length.

Apparatus and methods of measuring minority carrier lifetime using a liquid probe

DOEpatents

Li, Jian

2016-04-12

Methods and apparatus for measuring minority carrier lifetimes using liquid probes are provided. In one embodiment, a method of measuring the minority carrier lifetime of a semiconductor material comprises: providing a semiconductor material having a surface; forming a rectifying junction at a first location on the surface by temporarily contacting the surface with a conductive liquid probe; electrically coupling a second junction to the semiconductor material at a second location, wherein the first location and the second location are physically separated; applying a forward bias to the rectifying junction causing minority carrier injection in the semiconductor material; measuring a total capacitance as a function of frequency between the rectifying junction and the second junction; determining an inflection frequency of the total capacitance; and determining a minority lifetime of the semiconductor material from the inflection frequency.

27 CFR 9.154 - Chiles Valley.

Code of Federal Regulations, 2013 CFR

2013-04-01

... Chiles Valley. (a) Name. The name of the viticultural area described in this section is “Chiles Valley... viticultural area are four 1:24,000 Scale U.S.G.S. topography maps. They are titled: (1) St. Helena, CA 1960 photorevised 1980; (2) Rutherford, CA 1951 photorevised 1968; (3) Chiles Valley, CA 1958 photorevised 1980; (4...

Meter-Scale Characteristics of Martian Channels and Valleys

USGS Publications Warehouse

Carr, M.H.; Malin, M.C.

2000-01-01

Mars Global Surveyor images, with resolutions as high as 1.5 m pixel, enable characterization of martian channels and valleys at resolutions one to two orders of magnitude better than was previously possible. A major surprise is the near-absence of valleys a few hundred meters wide and narrower. The almost complete absence of fine-scale valleys could be due to lack of precipitation, destruction of small valleys by erosion, or dominance of infiltration over surface runoff. V-shaped valleys with a central channel, such as Nanedi Vallis, provide compelling evidence for sustained or episodic flow of water across the surface. Larger valleys appear to have formed not by headward erosion as a consequence of groundwater sapping but by erosion from water sources upstream of the observed sections. The freshest appearing valleys have triangular cross sections, with talus from opposing walls meeting at the center of the valley. The relations suggest that the width of the valleys is controlled by the depth of incision and the angle of repose of the walls. The flat floors of less fresh-appearing valleys result primarily from later eolian fill. Several discontinuous valleys and lines of craters suggest massive subsurface solution or erosion. The climatic implications of the new images will remain obscure until the cause for the scarcity of fine-scale dissection is better understood. ?? 2000 Academic Press.

The effects of interfacial recombination and injection barrier on the electrical characteristics of perovskite solar cells

NASA Astrophysics Data System (ADS)

Shi, Lin Xing; Wang, Zi Shuai; Huang, Zengguang; Sha, Wei E. I.; Wang, Haoran; Zhou, Zhen

2018-02-01

Charge carrier recombination in the perovskite solar cells (PSCs) has a deep influence on the electrical performance, such as open circuit voltage, short circuit current, fill factor and ultimately power conversion efficiency. The impacts of injection barrier, recombination channels, doping properties of carrier transport layers and light intensity on the performance of PSCs are theoretically investigated by drift-diffusion model in this work. The results indicate that due to the injection barrier at the interfaces of perovskite and carrier transport layer, the accumulated carriers modify the electric field distribution throughout the PSCs. Thus, a zero electric field is generated at a specific applied voltage, with greatly increases the interfacial recombination, resulting in a local kink of current density-voltage (J-V) curve. This work provides an effective strategy to improve the efficiency of PSCs by pertinently reducing both the injection barrier and interfacial recombination.

Supplement Analysis for the Transmission System Vegetation Management Program FEIS (DOE/EIS-0285/SA-60) - Rocky Reach - Maple Valley No. 1

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, Mark A.

2002-04-15

Vegetation Management along the Rocky Reach – Maple Valley No. 1 Transmission Line ROW from structure 110/1 to the Maple Valley Substation. The transmission line is a 500 kV line. BPA proposes to clear targeted vegetation along access roads and around tower structures that may impede the operation and maintenance of the subject transmission line. BPA plans to conduct vegetation management along existing access road and around structure landings for the purpose of maintaining access to structures site. All work will be in accordance with the National Electrical Safety Code and BPA standards.

Microscopic Identification of Prokaryotes in Modern and Ancient Halite, Saline Valley and Death Valley, California

NASA Astrophysics Data System (ADS)

Schubert, Brian A.; Lowenstein, Tim K.; Timofeeff, Michael N.

2009-06-01

Primary fluid inclusions in halite crystallized in Saline Valley, California, in 1980, 2004-2005, and 2007, contain rod- and coccoid-shaped microparticles the same size and morphology as archaea and bacteria living in modern brines. Primary fluid inclusions from a well-dated (0-100,000 years), 90 m long salt core from Badwater Basin, Death Valley, California, also contain microparticles, here interpreted as halophilic and halotolerant prokaryotes. Prokaryotes are distinguished from crystals on the basis of morphology, optical properties (birefringence), and uniformity of size. Electron micrographs of microparticles from filtered modern brine (Saline Valley), dissolved modern halite crystals (Saline Valley), and dissolved ancient halite crystals (Death Valley) support in situ microscopic observations that prokaryotes are present in fluid inclusions in ancient halite. In the Death Valley salt core, prokaryotes in fluid inclusions occur almost exclusively in halite precipitated in perennial saline lakes 10,000 to 35,000 years ago. This suggests that trapping and preservation of prokaryotes in fluid inclusions is influenced by the surface environment in which the halite originally precipitated. In all cases, prokaryotes in fluid inclusions in halite from the Death Valley salt core are miniaturized (<1 μm diameter cocci, <2.5 μm long, very rare rod shapes), which supports interpretations that the prokaryotes are indigenous to the halite and starvation survival may be the normal response of some prokaryotes to entrapment in fluid inclusions for millennia. These results reinforce the view that fluid inclusions in halite and possibly other evaporites are important repositories of microbial life and should be carefully examined in the search for ancient microorganisms on Earth, Mars, and elsewhere in the Solar System.

Valley Vortex States in Sonic Crystals

NASA Astrophysics Data System (ADS)

Lu, Jiuyang; Qiu, Chunyin; Ke, Manzhu; Liu, Zhengyou

2016-03-01

Valleytronics is quickly emerging as an exciting field in fundamental and applied research. In this Letter, we study the acoustic version of valley states in sonic crystals and reveal a vortex nature of such states. In addition to the selection rules established for exciting valley polarized states, a mimicked valley Hall effect of sound is proposed further. The extraordinary chirality of valley vortex states, detectable in experiments, may open a new possibility in sound manipulations. This is appealing to scalar acoustics that lacks a spin degree of freedom inherently. In addition, the valley selection enables a handy way to create vortex matter in acoustics, in which the vortex chirality can be controlled flexibly. Potential applications can be anticipated with the exotic interaction of acoustic vortices with matter, such as to trigger the rotation of the trapped microparticles without contact.

Topological Valley Transport in Two-dimensional Honeycomb Photonic Crystals.

PubMed

Yang, Yuting; Jiang, Hua; Hang, Zhi Hong

2018-01-25

Two-dimensional photonic crystals, in analogy to AB/BA stacking bilayer graphene in electronic system, are studied. Inequivalent valleys in the momentum space for photons can be manipulated by simply engineering diameters of cylinders in a honeycomb lattice. The inequivalent valleys in photonic crystal are selectively excited by a designed optical chiral source and bulk valley polarizations are visualized. Unidirectional valley interface states are proved to exist on a domain wall connecting two photonic crystals with different valley Chern numbers. With the similar optical vortex index, interface states can couple with bulk valley polarizations and thus valley filter and valley coupler can be designed. Our simple dielectric PC scheme can help to exploit the valley degree of freedom for future optical devices.

Resistivity structure and geochemistry of the Jigokudani Valley hydrothermal system, Mt. Tateyama, Japan

NASA Astrophysics Data System (ADS)

Seki, Kaori; Kanda, Wataru; Tanbo, Toshiya; Ohba, Takeshi; Ogawa, Yasuo; Takakura, Shinichi; Nogami, Kenji; Ushioda, Masashi; Suzuki, Atsushi; Saito, Zenshiro; Matsunaga, Yasuo

2016-10-01

This study clarifies the hydrothermal system of Jigokudani Valley near Mt. Tateyama volcano in Japan by using a combination of audio-frequency magnetotelluric (AMT) survey and hot-spring water analysis in order to assess the potential of future phreatic eruptions in the area. Repeated phreatic eruptions in the area about 40,000 years ago produced the current valley morphology, which is now an active solfatara field dotted with hot springs and fumaroles indicative of a well-developed hydrothermal system. The three-dimensional (3D) resistivity structure of the hydrothermal system was modeled by using the results of an AMT survey conducted at 25 locations across the valley in 2013-2014. The model suggests the presence of a near-surface highly conductive layer of < 50 m in thickness across the entire valley, which is interpreted as a cap rock layer. Immediately below the cap rock is a relatively resistive body interpreted as a gas reservoir. Field measurements of temperature, pH, and electrical conductivity (EC) were taken at various hot springs across the valley, and 12 samples of hot-spring waters were analyzed for major ion chemistry and H2O isotopic ratios. All hot-spring waters had low pH and could be categorized into three types on the basis of the Cl-/SO 42 - concentration ratio, with all falling largely on a mixing line between magmatic fluids and local meteoric water (LMW). The geochemical analysis suggests that the hydrothermal system includes a two-phase zone of vapor-liquid. A comparison of the resistivity structure and the geochemically inferred structure suggests that a hydrothermal reservoir is present at a depth of approximately 500 m, from which hot-spring water differentiates into the three observed types. The two-phase zone appears to be located immediately beneath the cap rock structure. These findings suggest that the hydrothermal system of Jigokudani Valley exhibits a number of factors that could trigger a future phreatic eruption.

Characterizing Drought Impacted Soils in the San Joaquin Valley of California Using Remote Sensing

NASA Astrophysics Data System (ADS)

Wahab, L. M.; Miller, D.; Roberts, D. A.

2017-12-01

California's San Joaquin Valley is an extremely agriculturally productive region of the country, and understanding the state of soils in this region is an important factor in maintaining this high productivity. In this study, we quantified changing soil cover during the drought and analyzed spatial changes in salinity, organic matter, and moisture using unique soil spectral characteristics. We used data from the Airborne Visible / Infrared Imaging Spectrometer (AVIRIS) from Hyperspectral Infrared Imager (HyspIRI) campaign flights in 2013 and 2014 over the San Joaquin Valley. A mixture model was applied to both images that identified non- photosynthetic vegetation, green vegetation, and soil cover fractions through image endmembers of each of these three classes. We optimized the spectral library used to identify these classes with Iterative Endmember Selection (IES), and the images were unmixed using Multiple Endmember Spectral Mixture Analysis (MESMA). Maps of soil electrical conductivity, organic matter, soil saturated moisture, and field moisture were generated for the San Joaquin Valley based on indices developed by Ben-Dor et al. [2002]. Representative polygons were chosen to quantify changes between years. Maps of spectrally distinct soils were also generated for 2013 and 2014, in order to determine the spatial distribution of these soil types as well as their temporal dynamics between years. We estimated that soil cover increased by 16% from 2013-2014. Six spectrally distinct soil types were identified for the region, and it was determined that the distribution of these soil types was not constant for most areas between 2013 and 2014. Changes in soil pH, electrical conductivity, and soil moisture were strongly tied in the region between 2013 and 2014.

Optical tuning of electronic valleys (Conference Presentation)

NASA Astrophysics Data System (ADS)

Sie, Edbert J.; Gedik, Nuh

2017-02-01

Monolayer transition-metal dichalcogenides such as MoS2 and WS2 are prime examples of atomically thin semiconducting crystals that exhibit remarkable electronic and optical properties. They have a pair of valleys that can serve as a new electronic degree of freedom, and these valleys obey optical selection rules with circularly polarized light. Here, we discuss how ultrafast laser pulses can be used to tune their energy levels in a controllable valley-selective manner. The energy tunability is extremely large, comparable to what would be obtained using a hundred Tesla of magnetic field. We will also show that such valley tunability can be performed while we effectively manipulate the valley selection rules. Finally, we will explore the prospect of using this technique through photoemission spectroscopy to create a new phase of matter called a valley Floquet topological insulator.

Multiscale transparent electrode architecture for efficient light management and carrier collection in solar cells.

PubMed

Boccard, Mathieu; Battaglia, Corsin; Hänni, Simon; Söderström, Karin; Escarré, Jordi; Nicolay, Sylvain; Meillaud, Fanny; Despeisse, Matthieu; Ballif, Christophe

2012-03-14

The challenge for all photovoltaic technologies is to maximize light absorption, to convert photons with minimal losses into electric charges, and to efficiently extract them to the electrical circuit. For thin-film solar cells, all these tasks rely heavily on the transparent front electrode. Here we present a multiscale electrode architecture that allows us to achieve efficiencies as high as 14.1% with a thin-film silicon tandem solar cell employing only 3 μm of silicon. Our approach combines the versatility of nanoimprint lithography, the unusually high carrier mobility of hydrogenated indium oxide (over 100 cm(2)/V/s), and the unequaled light-scattering properties of self-textured zinc oxide. A multiscale texture provides light trapping over a broad wavelength range while ensuring an optimum morphology for the growth of high-quality silicon layers. A conductive bilayer stack guarantees carrier extraction while minimizing parasitic absorption losses. The tunability accessible through such multiscale electrode architecture offers unprecedented possibilities to address the trade-off between cell optical and electrical performance. © 2012 American Chemical Society

Hydrogen: the future energy carrier.

PubMed

Züttel, Andreas; Remhof, Arndt; Borgschulte, Andreas; Friedrichs, Oliver

2010-07-28

Since the beginning of the twenty-first century the limitations of the fossil age with regard to the continuing growth of energy demand, the peaking mining rate of oil, the growing impact of CO2 emissions on the environment and the dependency of the economy in the industrialized world on the availability of fossil fuels became very obvious. A major change in the energy economy from fossil energy carriers to renewable energy fluxes is necessary. The main challenge is to efficiently convert renewable energy into electricity and the storage of electricity or the production of a synthetic fuel. Hydrogen is produced from water by electricity through an electrolyser. The storage of hydrogen in its molecular or atomic form is a materials challenge. Some hydrides are known to exhibit a hydrogen density comparable to oil; however, these hydrides require a sophisticated storage system. The system energy density is significantly smaller than the energy density of fossil fuels. An interesting alternative to the direct storage of hydrogen are synthetic hydrocarbons produced from hydrogen and CO2 extracted from the atmosphere. They are CO2 neutral and stored like fossil fuels. Conventional combustion engines and turbines can be used in order to convert the stored energy into work and heat.

Martian oceans, valleys and climate

USGS Publications Warehouse

Carr, M.H.

2000-01-01

The new Mars Global Surveyor altimetry shows that the heavily cratered southern hemisphere of Mars is 5 km higher that the sparely cratered plains of the northern hemisphere. Previous suggestions that oceans formerly occupied that northern plains as evidenced by shorelines are partly supported by the new data. A previously identified outer boundary has a wide range of elevations and is unlikely to be a shoreline but an inner contact with a narrow range of elevations is a more likely candidate. No shorelines are visible in the newly acquired, 2.5 metre/pixel imaging. Newly imaged valleys provide strong support for sustained or episodic flow of water across the Martian surface. A major surprise, however, is the near absence of valleys less than 100 m across. Martian valleys seemingly do not divide into ever smaller valleys as terrestrial valleys commonly do. This could be due to lack of precipitation or lack of surface runoff because of high infiltration rates. High erosion rates and supports warm climates and presence of large bodies of water during heavy bombardment. The climate history and fate of the water after heavy bombardment remain cotroversial.

Hydrochemical and water quality assessment of groundwater in Doon Valley of Outer Himalaya, Uttarakhand, India.

PubMed

Dudeja, Divya; Bartarya, Sukesh Kumar; Biyani, A K

2011-10-01

The present study discusses ion sources and assesses the chemical quality of groundwater of Doon Valley in Outer Himalayan region for drinking and irrigational purposes. Valley is almost filled with Doon gravels that are main aquifers supplying water to its habitants. Recharged only by meteoric water, groundwater quality in these aquifers is controlled essentially by chemical processes occurring between water and lithology and locally altered by human activities. Seventy-six water samples were collected from dug wells, hand pumps and tube wells and were analysed for their major ion concentrations. The pH is varying from 5.6 to 7.4 and electrical conductivity from 71 to 951 μmho/cm. Groundwater of Doon valley is dominated by bicarbonate contributing 83% in anionic abundance while calcium and magnesium dominate in cationic concentrations with 88%. The seasonal and spatial variation in ionic concentration, in general, is related to discharge and lithology. The high ratio of (Ca + Mg)/(Na + K), i.e. 10, low ratio of (Na + K)/TZ+, i.e.0.2 and also the presence of carbonate lithology in the northern part of valley, is indicative of carbonate dissolution as the main controlling solute acquisition process in the valley. The low abundance of silica content and high HCO₃/H₄SiO₄ ratio also supports carbonate dissolution and less significant role of silicate weathering as the major source for dissolved ions in Doon Valley. The analytical results computed for various indices show that water is of fairly good quality, although, hard but have moderate dissolved solid content. It is free from sodium hazard lying in C₁-S₁ and C₂-S₁ class of USSL diagram and in general suitable for drinking and irrigation except few locations having slightly high salinity hazard.

Knickpoints and Hanging Valleys of Licus Vallis, Mars

NASA Astrophysics Data System (ADS)

Goudge, T. A.; Fassett, C.

2016-12-01

Licus Vallis is a 350 km long valley system located along the dichotomy boundary on Mars. The main trunk of the valley is incised 200-700 m into the surrounding terrain. The valley heads at an outlet breach of a shallow, 30 km diameter impact crater, and is also fed by a system of tributaries incised into the plateau surrounding Licus Vallis. Many of the tributary valleys, as well as the main stem of the valley fed by the paleolake outlet, have profiles that are not smoothly graded, but rather have distinct reaches with concave downward topography. These sections are either knickpoints or hanging valleys that develop in response to changes in the effective local base level, changes in climate conditions during incision of the valley, or lithologic boundaries in the substrate. Here we present remote sensing observations from images and topography to test these competing hypotheses and further characterize the evolution of this large valley system. Slope-watershed area relationships for the tributaries and main trunk valley are used to distinguish between knickpoints and hanging valleys. Analysis of orbital images does not reveal any distinct layer above which knickpoints develop, and the elevation of knickpoints show no systematic trends that might be expected of a regional lithologic unit(s). Our preliminary results suggest that the distance of knickpoint retreat is correlated with the position of the tributary valley and not the watershed area. Downstream valleys have retreated the most, suggesting they have had the most time to adjust to lowering of the local base level associated with incision of the main valley. These results are most consistent with a wave of incision sweeping up the valley system as it adjusts to a low base level in the northern plains. This conclusion is also consistent with observations of the incision depth of Licus Vallis, which increases approximately linearly downstream. Understanding this signature of base level control on the incision

Recovery Act: Novel Oxygen Carriers for Coal-fueled Chemical Looping

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pan, Wei-Ping; Cao, Yan

2012-11-30

Chemical Looping Combustion (CLC) could totally negate the necessity of pure oxygen by using oxygen carriers for purification of CO{sub 2} stream during combustion. It splits the single fuel combustion reaction into two linked reactions using oxygen carriers. The two linked reactions are the oxidation of oxygen carriers in the air reactor using air, and the reduction of oxygen carriers in the fuel reactor using fuels (i.e. coal). Generally metal/metal oxides are used as oxygen carriers and operated in a cyclic mode. Chemical looping combustion significantly improves the energy conversion efficiency, in terms of the electricity generation, because it improvesmore » the reversibility of the fuel combustion process through two linked parallel processes, compared to the conventional combustion process, which is operated far away from its thermo-equilibrium. Under the current carbon-constraint environment, it has been a promising carbon capture technology in terms of fuel combustion for power generation. Its disadvantage is that it is less mature in terms of technological commercialization. In this DOE-funded project, accomplishment is made by developing a series of advanced copper-based oxygen carriers, with properties of the higher oxygen-transfer capability, a favorable thermodynamics to generate high purity of CO{sub 2}, the higher reactivity, the attrition-resistance, the thermal stability in red-ox cycles and the achievement of the auto-thermal heat balance. This will be achieved into three phases in three consecutive years. The selected oxygen carriers with final-determined formula were tested in a scaled-up 10kW coal-fueled chemical looping combustion facility. This scaled-up evaluation tests (2-day, 8-hour per day) indicated that, there was no tendency of agglomeration of copper-based oxygen carriers. Only trace-amount of coke or carbon deposits on the copper-based oxygen carriers in the fuel reactor. There was also no evidence to show the sulphidization of

Optical and electrical stability of viral-templated copper sulfide (Cu{sub 1.8}S) films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shahriar Zaman, Mohammed; Bernard Grajeda, Gabriel; Haberer, Elaine D., E-mail: haberer@ucr.edu

The optical and electrical stabilities of viral-templated non-stoichiometric copper sulfide, digenite (Cu{sub 1.8}S) films were investigated. The films were composed of large agglomerates of randomly aligned Cu{sub 1.8}S-coated M13 filamentous phage. Free carrier optical absorption associated with localized surface plasmon resonance (LSPR) was observed in the near infrared spectral region, and the films were electrically active, displaying a linear current-voltage relationship. Under ambient conditions, the magnitude of the LSPR absorption increased, following a power law relationship with time, and the electrical resistance of viral-templated films decreased significantly. In contrast, the resistance of films stored under low oxygen, low humidity conditionsmore » experienced a smaller reduction in electrical resistance. Changes in optical and electrical film properties under ambient conditions were associated with an increase in free carrier concentration within the copper chalcogenide material due to oxygen exposure. X-ray photoelectron spectroscopy was used to relate this increase in free carrier concentration to compositional changes on the viral-templated material surface.« less

Hybrid Perovskites for Photovoltaics: Charge-Carrier Recombination, Diffusion, and Radiative Efficiencies.

PubMed

Johnston, Michael B; Herz, Laura M

2016-01-19

Photovoltaic (PV) devices that harvest the energy provided by the sun have great potential as renewable energy sources, yet uptake has been hampered by the increased cost of solar electricity compared with fossil fuels. Hybrid metal halide perovskites have recently emerged as low-cost active materials in PV cells with power conversion efficiencies now exceeding 20%. Rapid progress has been achieved over only a few years through improvements in materials processing and device design. In addition, hybrid perovskites appear to be good light emitters under certain conditions, raising the prospect of applications in low-cost light-emitting diodes and lasers. Further optimization of such hybrid perovskite devices now needs to be supported by a better understanding of how light is converted into electrical currents and vice versa. This Account provides an overview of charge-carrier recombination and mobility mechanisms encountered in such materials. Optical-pump-terahertz-probe (OPTP) photoconductivity spectroscopy is an ideal tool here, because it allows the dynamics of mobile charge carriers inside the perovskite to be monitored following excitation with a short laser pulse whose photon energy falls into the range of the solar spectrum. We first review our insights gained from transient OPTP and photoluminescence spectroscopy on the mechanisms dominating charge-carrier recombination in these materials. We discuss that mono-molecular charge-recombination predominantly originates from trapping of charges, with trap depths being relatively shallow (tens of millielectronvolts) for hybrid lead iodide perovskites. Bimolecular recombination arises from direct band-to-band electron-hole recombination and is found to be in significant violation of the simple Langevin model. Auger recombination exhibits links with electronic band structure, in accordance with its requirement for energy and momentum conservation for all charges involved. We further discuss charge-carrier mobility

A Novel Photonic Clock and Carrier Recovery Device

NASA Technical Reports Server (NTRS)

Yao, X. Steve; Lutes, George; Maleki, Lute

1996-01-01

As data communication rates climb toward ten Gb/s, clock recovery and synchronization become more difficult, if not impossible, using conventional electronic circuits. We present in this article experimental results of a high speed clock and carrier recovery using a novel device called a photonic oscillator that we recently developed in our laboratory. This device is capable of recovering clock signals up to 70 GHz. To recover the clock, the incoming data is injected into the photonic oscillator either through the optical injection port or the electrical injection port. The free running photonic oscillator is tuned to oscillate at a nominal frequency equal to the clock frequency of the incoming data. With the injection of the data, the photonic oscillator will be quickly locked to clock frequency of the data stream while rejecting other frequency components associated with the data. Consequently, the output of the locked photonic oscillator is a continuous periodical wave synchronized with the incoming data or simply the recovered clock. We have demonstrated a clock to spur ratio of more than 60 dB of the recovered clock using this technique. Similar to the clock recovery, the photonic oscillator can be used to recover a high frequency carrier degraded by noise and an improvement of about 50 dB in signal-to-noise ratio was demonstrated. The photonic oscillator has both electrical and optical inputs and outputs and can be directly interfaced with a photonic system without signal conversion. In addition to clock and carrier recovery, the photonic oscillator can also be used for (1) stable high frequency clock signal generation, (2) frequency multiplication, (3) square wave and comb frequency generation, and (4) photonic phase locked loop.

Characterization of the Hole Transport and Electrical Properties in the Small-Molecule Organic Semiconductors

NASA Astrophysics Data System (ADS)

Wang, L. G.; Zhu, J. J.; Liu, X. L.; Cheng, L. F.

2017-10-01

In this paper, we investigate the hole transport and electrical properties in a small-molecule organic material N, N'-bis(1-naphthyl)- N, N'-diphenyl-1,1'-biphenyl-4,4'-diamine (NPB), which is frequently used in organic light-emitting diodes. It is shown that the thickness-dependent current density versus voltage ( J- V) characteristics of sandwich-type NPB-based hole-only devices cannot be described well using the conventional mobility model without carrier density or electric field dependence. However, a consistent and excellent description of the thickness-dependent and temperature-dependent J- V characteristics of NPB hole-only devices can be obtained with a single set of parameters by using our recently introduced improved model that take into account the temperature, carrier density, and electric field dependence of the mobility. For the small-molecule organic semiconductor studied, we find that the width of the Gaussian distribution of density of states σ and the lattice constant a are similar to the values reported for conjugated polymers. Furthermore, we show that the boundary carrier density has an important effect on the J- V characteristics. Both the maximum of carrier density and the minimum of electric field appear near the interface of NPB hole-only devices.

Detail of one way mirror, mail slot, and electrical box ...

Library of Congress Historic Buildings Survey, Historic Engineering Record, Historic Landscapes Survey

Detail of one way mirror, mail slot, and electrical box at sentry post no. 3, top of east stairs near the end of second floor corridor - March Air Force Base, Strategic Air Command, Combat Operations Center, 5220 Riverside Drive, Moreno Valley, Riverside County, CA

Geophysical Surveys of the Hydrologic Basin Underlying Yosemite Valley, California.

NASA Astrophysics Data System (ADS)

Maher, E. L.; Shaw, K. A.; Carey, C.; Dunn, M. E.; Whitman, S.; Bourdeau, J.; Eckert, E.; Louie, J. N.; Stock, G. M.

2017-12-01

UNR students in an Applied Geophysics course conducted geophysical investigations in Yosemite Valley during the months of March and August 2017. The goal of the study is to understand better the depth to bedrock, the geometry of the bedrock basin, and the properties of stratigraphy- below the valley floor. Gutenberg and others published the only prior geophysical investigation in 1956, to constrain the depth to bedrock. We employed gravity, resistivity, and refraction microtremor(ReMi) methods to investigate the interface between valley fill and bedrock, as well as shallow contrasts. Resistivity and ReMi arrays along three north-south transects investigated the top 50-60m of the basin fill. Gravity results constrained by shallow measurements suggest a maximum depth of 1000 m to bedrock. ReMi and resistivity techniques identified shallow contrasts in shear velocity and electrical resistivity that yielded information about the location of the unconfined water table, the thickness of the soil zone, and spatial variation in shallow sediment composition. The upper several meters of sediment commonly showed shear velocities below 200 m/s, while biomass-rich areas and sandy river banks could be below 150 m/s. Vs30 values consistently increased towards the edge of the basin. The general pattern for resistivity profiles was a zone of relatively high resistivity, >100 ohm-m, in the top 4 meters, followed by one or more layers with decreased resistivity. According to gravity measurements, assuming either -0.5 g/cc or -0.7 g/cc density contrast between bedrock and basin sediments, a maximum depth to bedrock is found south of El Capitan at respectively, 1145 ± 215 m or 818 ± 150 m. Longitudinal basin geometry coincides with the basin depth geometry discussed by Gutenberg in 1956. Their results describe a "double camel" shape where the deepest points are near El Capitan and the Ahwahnee Hotel and is shallowest near Yosemite Falls, in a wider part of the valley. An August Deep

14 CFR 221.204 - Adoption of provisions of one carrier by another carrier.

Code of Federal Regulations, 2010 CFR

2010-01-01

... Adoption of provisions of one carrier by another carrier. When one carrier adopts the tariffs of another carrier, the effective and prospective fares of the adopted carrier shall be changed to reflect the name of the adopting carrier and the effective date of the adoption. Further, each adopted fare shall bear...

Magnetic control of valley pseudospin in monolayer WSe 2

DOE PAGES

Aivazian, G.; Gong, Zhirui; Jones, Aaron M.; ...

2015-01-26

Local energy extrema of the bands in momentum space, or valleys, can endow electrons in solids with pseudo-spin in addition to real spin 1-5. In transition metal dichalcogenides this valley pseudo-spin, like real spin, is associated with a magnetic moment1,6 which underlies the valley-dependent circular dichroism 6 that allows optical generation of valley polarization 7-9, intervalley quantum coherence 10, and the valley Hall effect 11. However, magnetic manipulation of valley pseudospin via this magnetic moment 12-13, analogous to what is possible with real spin, has not been shown before. Here we report observation of the valley Zeeman splitting and magneticmore » tuning of polarization and coherence of the excitonic valley pseudospin, by performing polarization-resolved magneto-photoluminescence on monolayer WSe 2. Our measurements reveal both the atomic orbital and lattice contributions to the valley orbital magnetic moment; demonstrate the deviation of the band edges in the valleys from an exact massive Dirac fermion model; and reveal a striking difference between the magnetic responses of neutral and charged valley excitons which is explained by renormalization of the excitonic spectrum due to strong exchange interactions.« less

Modification of electrical properties of topological insulators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, Peter Anand

Ion implantation or deposition can be used to modify the bulk electrical properties of topological insulators. More particularly, ion implantation or deposition can be used to compensate for the non-zero bulk conductivity due to extrinsic charge carriers. The direct implantation of deposition/annealing of dopants allows better control over carrier concentrations for the purposes of achieving low bulk conductivity. Ion implantation or deposition enables the fabrication of inhomogeneously doped structures, enabling new types of device designs.

Microscopic study on the carrier distribution in optoelectronic device structures: experiment and modeling

NASA Astrophysics Data System (ADS)

Huang, Wenchao; Xia, Hui; Wang, Shaowei; Deng, Honghai; Wei, Peng; Li, Lu; Liu, Fengqi; Li, Zhifeng; Li, Tianxin

2011-12-01

Scanning capacitance microscopy (SCM) and scanning spreading resistance microscopy (SSRM) both are capable of mapping the 2-demensional carrier distribution in semiconductor device structures, which is essential in determining their electrical and optoelectronic performances. In this work, cross-sectional SCM1,2 is used to study the InGaAs/InP P-i-N junctions prepared by area-selective p-type diffusion. The diffusion lengths in the depth as well as the lateral directions are obtained for junctions under different window sizes in mask, which imply that narrow windows may result in shallow p-n junctions. The analysis is beneficial to design and fabricate focal plane array of near infrared photodetectors with high duty-cycle and quantum efficiency. On the other hand, SSRM provides unparalleled spatial resolution (<10 nm) in electrical characterization3 that is demanded for studying low-dimensional structures. However, to derive the carrier density from the measured local conductance in individual quantum structures, reliable model for SSRM is necessary but still not well established. Based on the carrier concentration related transport mechanisms, i.e. thermionic emission and thermionic field emission4,5, we developed a numerical model for the tip-sample Schottky contact4. The calculation is confronted with SSRM study on the dose-calibrated quantum wells (QWs).

Impact of carrier doping on electrical properties of laser-induced liquid-phase-crystallized silicon thin films for solar cell application

NASA Astrophysics Data System (ADS)

Umishio, Hiroshi; Matsui, Takuya; Sai, Hitoshi; Sakurai, Takeaki; Matsubara, Koji

2018-02-01

Large-grain-size (>1 mm) liquid-phase-crystallized silicon (LPC-Si) films with a wide range of carrier doping levels (1016-1018 cm-3 either of the n- or p-type) were prepared by irradiating amorphous silicon with a line-shaped 804 nm laser, and characterized for solar cell applications. The LPC-Si films show high electron and hole mobilities with maximum values of ˜800 and ˜200 cm2 V-1 s-1, respectively, at a doping level of ˜(2-4) × 1016 cm-3, while their carrier lifetime monotonically increases with decreasing carrier doping level. A grain-boundary charge-trapping model provides good fits to the measured mobility-carrier density relations, indicating that the potential barrier at the grain boundaries limits the carrier transport in the lowly doped films. The open-circuit voltage and short-circuit current density of test LPC-Si solar cells depend strongly on the doping level, peaking at (2-5) × 1016 cm-3. These results indicate that the solar cell performance is governed by the minority carrier diffusion length for the highly doped films, while it is limited by majority carrier transport as well as by device design for the lowly doped films.

Attosecond optical-field-enhanced carrier injection into the GaAs conduction band

NASA Astrophysics Data System (ADS)

Schlaepfer, F.; Lucchini, M.; Sato, S. A.; Volkov, M.; Kasmi, L.; Hartmann, N.; Rubio, A.; Gallmann, L.; Keller, U.

2018-06-01

Resolving the fundamental carrier dynamics induced in solids by strong electric fields is essential for future applications, ranging from nanoscale transistors1,2 to high-speed electro-optical switches3. How fast and at what rate can electrons be injected into the conduction band of a solid? Here, we investigate the sub-femtosecond response of GaAs induced by resonant intense near-infrared laser pulses using attosecond transient absorption spectroscopy. In particular, we unravel the distinct role of intra- versus interband transitions. Surprisingly, we found that despite the resonant driving laser, the optical response during the light-matter interaction is dominated by intraband motion. Furthermore, we observed that the coupling between the two mechanisms results in a significant enhancement of the carrier injection from the valence into the conduction band. This is especially unexpected as the intraband mechanism itself can accelerate carriers only within the same band. This physical phenomenon could be used to control ultrafast carrier excitation and boost injection rates in electronic switches in the petahertz regime.

27 CFR 9.36 - McDowell Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

....” (b) Approved maps. The appropriate map for determining the boundaries of the McDowell Valley... and the ridge line (highest elevation line) between the McDowell Creek Valley and the Dooley Creek Valley. (3) Then southeasterly along the ridge line (highest elevation line) to the intersection of the...

27 CFR 9.36 - McDowell Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

....” (b) Approved maps. The appropriate map for determining the boundaries of the McDowell Valley... and the ridge line (highest elevation line) between the McDowell Creek Valley and the Dooley Creek Valley. (3) Then southeasterly along the ridge line (highest elevation line) to the intersection of the...

Valley Near Nilus Chaos

NASA Technical Reports Server (NTRS)

2003-01-01

MGS MOC Release No. MOC2-504, 5 October 2003

This August 2003 Mars Global Surveyor (MGS) Mars Orbiter Camera (MOC) image shows a valley near Nilus Chaos, around 25.2oN, 80.3oW. The scene has a uniform albedo, indicating that all of the landforms are probably mantled by fine, bright dust. Dark streaks on the valley walls indicate places where recent dust avalanches have occurred. The ripple-like dune features on the valley floor were formed by wind, but today they are inactive and covered with dust. A few craters, created by impacting debris, have formed on the dunes, again attesting to their inactivity in the modern martian environment. The image covers an area 3 km (1.9 mi) wide; it is illuminated by sunlight from the lower left.

Solar thermal electric hybridization issues

NASA Astrophysics Data System (ADS)

Williams, Tom A.; Bohn, Mark S.; Price, Henry W.

1994-10-01

Solar thermal electric systems have an advantage over many other renewable energy technologies because the former use heat as an intermediate energy carrier. This is an advantage, as it allows for a relatively simple method of hybridization by using heat from fossil-fuel. Hybridization of solar thermal electric systems is a topic that has recently generated significant interest and controversy and has led to many diverse opinions. This paper discusses many of the issues associated with hybridization of solar thermal electric systems such as what role hybridization should play; how it should be implemented; what are the efficiency, environmental, and cost implications; what solar fraction is appropriate; how hybrid systems compete with solar-only systems; and how hybridization can impact commercialization efforts for solar thermal electric systems.

27 CFR 9.194 - San Antonio Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... significance. (b) Approved Maps. The appropriate maps for determining the boundary of the San Antonio Valley...) Hames Valley, California, 1949, photorevised 1978; (2) Tierra Redonda Mountain, California, 1949... southeast corner of section 14, T23S, R9E, on the Hames Valley map; (2) From the beginning point, proceed...

Morning Transition Tracer Experiments in a Deep Narrow Valley.

NASA Astrophysics Data System (ADS)

Whiteman, C. David

1989-07-01

Three sulfur hexafluoride atmospheric tracer experiments were conducted during the post-sunrise temperature inversion breakup period in the deep, narrow Brush Creek Valley of Colorado. Experiments were conducted under clear, undisturbed weather conditions.A continuous elevated tracer plume was produced along the axis of the valley before sunrise and the behavior of the plume during the inversion breakup period was detected down-valley from the release point using an array of radio-controlled sequential bag samplers, a vertical SF6 profiling system carried on a tethered balloon, two portable gas chromatographs operated on a sidewall of the valley, and a continuous real-time SF6 monitor operated from a research aircraft. Supporting meteorological data came primarily from tethered balloon profilers. The nocturnal elevated plume was carried and diffused in down-valley flows. After sunrise, convective boundary layers grew upward from the sunlit valley surfaces, fumigating the elevated plume onto the valley floor and sidewalls. Upslope flow developed in the growing convective boundary layers, carrying fumigated SF6 up the sidewalls and causing a compensating subsidence over the valley center. High post-sunrise SF6 concentrations were experienced on the northeast-facing sidewall of the northwest-southeast oriented valley as a result of cross-valley flow, which developed due to differential solar heating of the sidewalls. Reversal of the down-valley wind system brought air with lower SF6 concentrations into the lower valley.

Effect of the microstructure on electrical properties of high-purity germanium

NASA Astrophysics Data System (ADS)

Podkopaev, O. I.; Shimanskii, A. F.; Molotkovskaya, N. O.; Kulakovskaya, T. V.

2013-05-01

The interrelation between the electrical properties and the microstructure of high-purity germanium crystals has been revealed. The electrical conductivity of polycrystalline samples increases and the life-time of nonequilibrium charge carriers in them decreases with a decrease in the crystallite sizes.

Electrical transport properties of individual WS2 nanotubes and their dependence on water and oxygen absorption

NASA Astrophysics Data System (ADS)

Zhang, Chaoying; Ning, Zhiyuan; Liu, Yang; Xu, Tingting; Guo, Yao; Zak, Alla; Zhang, Zhiyong; Wang, Sheng; Tenne, Reshef; Chen, Qing

2012-09-01

The electrical properties of WS2 nanotubes (NTs) were studied through measuring 59 devices. Important electrical parameters, such as the carrier concentration, mobility, and effective barrier height at the contacts, were obtained through fitting experimental non-linear I-V curves using a metal-semiconductor-metal model. The carrier mobility was found to be several orders of magnitude higher than that have been reported previously for WS2 NTs. Water absorption was found to decrease the conductivity and carrier mobility of the NTs, and could be removed when the sample was dried. Oxygen absorption also slightly decreased the conductivity of WS2 NTs.

The Central Valley Hydrologic Model

NASA Astrophysics Data System (ADS)

Faunt, C.; Belitz, K.; Hanson, R. T.

2009-12-01

Historically, California’s Central Valley has been one of the most productive agricultural regions in the world. The Central Valley also is rapidly becoming an important area for California’s expanding urban population. In response to this competition for water, a number of water-related issues have gained prominence: conjunctive use, artificial recharge, hydrologic implications of land-use change, subsidence, and effects of climate variability. To provide information to stakeholders addressing these issues, the USGS made a detailed assessment of the Central Valley aquifer system that includes the present status of water resources and how these resources have changed over time. The principal product of this assessment is a tool, referred to as the Central Valley Hydrologic Model (CVHM), that simulates surface-water flows, groundwater flows, and land subsidence in response to stresses from human uses and from climate variability throughout the entire Central Valley. The CVHM utilizes MODFLOW combined with a new tool called “Farm Process” to simulate groundwater and surface-water flow, irrigated agriculture, land subsidence, and other key processes in the Central Valley on a monthly basis. This model was discretized horizontally into 20,000 1-mi2 cells and vertically into 10 layers ranging in thickness from 50 feet at the land surface to 750 feet at depth. A texture model constructed by using data from more than 8,500 drillers’ logs was used to estimate hydraulic properties. Unmetered pumpage and surface-water deliveries for 21 water-balance regions were simulated with the Farm Process. Model results indicate that human activities, predominately surface-water deliveries and groundwater pumping for irrigated agriculture, have dramatically influenced the hydrology of the Central Valley. These human activities have increased flow though the aquifer system by about a factor of six compared to pre-development conditions. The simulated hydrology reflects spatial

Communicating with residential electrical devices via a vehicle telematics unit

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roth, Rebecca C.; Pebbles, Paul H.

A method of communicating with residential electrical devices using a vehicle telematics unit includes receiving information identifying a residential electrical device to control; displaying in a vehicle one or more controlled features of the identified residential electrical device; receiving from a vehicle occupant a selection of the displayed controlled features of the residential electrical device; sending an instruction from the vehicle telematics unit to the residential electrical device via a wireless carrier system in response to the received selection; and controlling the residential electrical device using the sent instruction.

NV PFA - Steptoe Valley

DOE Data Explorer

Jim Faulds

2015-10-29

All datasets and products specific to the Steptoe Valley model area. Includes a packed ArcMap project (.mpk), individually zipped shapefiles, and a file geodatabase for the northern Steptoe Valley area; a GeoSoft Oasis montaj project containing GM-SYS 2D gravity profiles along the trace of our seismic reflection lines; a 3D model in EarthVision; spreadsheet of links to published maps; and spreadsheets of well data.

27 CFR 9.27 - Lime Kiln Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Lime Kiln Valley. 9.27... OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.27 Lime Kiln Valley. (a) Name. The name of the viticultural area described in this section is “Lime Kiln Valley...

Electrical control of antiferromagnetic metal up to 15 nm

NASA Astrophysics Data System (ADS)

Zhang, PengXiang; Yin, GuFan; Wang, YuYan; Cui, Bin; Pan, Feng; Song, Cheng

2016-08-01

Manipulation of antiferromagnetic (AFM) spins by electrical means is on great demand to develop the AFM spintronics with low power consumption. Here we report a reversible electrical control of antiferromagnetic moments of FeMn up to 15 nm, using an ionic liquid to exert a substantial electric-field effect. The manipulation is demonstrated by the modulation of exchange spring in [Co/Pt]/FeMn system, where AFM moments in FeMn pin the magnetization rotation of Co/Pt. By carrier injection or extraction, the magnetic anisotropy of the top layer in FeMn is modulated to influence the whole exchange spring and then passes its influence to the [Co/Pt]/FeMn interface, through a distance up to the length of exchange spring that fully screens electric field. Comparing FeMn to IrMn, despite the opposite dependence of exchange bias on gate voltages, the same correlation between carrier density and exchange spring stiffness is demonstrated. Besides the fundamental significance of modulating the spin structures in metallic AFM via all-electrical fashion, the present finding would advance the development of low-power-consumption AFM spintronics.

‘Valley Pearl’ table grape

USDA-ARS?s Scientific Manuscript database

‘Valley Pearl’ is an early to mid-season, white seedless table grape (Vitis vinifera L.) suitable for commercial table grape production where V. vinifera can be grown. Significant characteristics of ‘Valley Pearl’ are its high and consistent fruit production on spur pruned vines and large round berr...

Extraction of Martian valley networks from digital topography

NASA Technical Reports Server (NTRS)

Stepinski, T. F.; Collier, M. L.

2004-01-01

We have developed a novel method for delineating valley networks on Mars. The valleys are inferred from digital topography by an autonomous computer algorithm as drainage networks, instead of being manually mapped from images. Individual drainage basins are precisely defined and reconstructed to restore flow continuity disrupted by craters. Drainage networks are extracted from their underlying basins using the contributing area threshold method. We demonstrate that such drainage networks coincide with mapped valley networks verifying that valley networks are indeed drainage systems. Our procedure is capable of delineating and analyzing valley networks with unparalleled speed and consistency. We have applied this method to 28 Noachian locations on Mars exhibiting prominent valley networks. All extracted networks have a planar morphology similar to that of terrestrial river networks. They are characterized by a drainage density of approx.0.1/km, low in comparison to the drainage density of terrestrial river networks. Slopes of "streams" in Martian valley networks decrease downstream at a slower rate than slopes of streams in terrestrial river networks. This analysis, based on a sizable data set of valley networks, reveals that although valley networks have some features pointing to their origin by precipitation-fed runoff erosion, their quantitative characteristics suggest that precipitation intensity and/or longevity of past pluvial climate were inadequate to develop mature drainage basins on Mars.

Dynamics of Katabatic Winds in Colorado' Brush Creek Valley.

NASA Astrophysics Data System (ADS)

Vergeiner, I.; Dreiseitl, E.; Whiteman, C. David

1987-01-01

A method is proposed to evaluate the coupled mass, momentum and thermal energy budget equations for a deep valley under two-dimensional, steady-state flow conditions. The method requires the temperature, down- valley wind and valley width fields to be approximated by simple analytical functions. The vertical velocity field is calculated using the mass continuity equation. Advection terms in the momentum and energy equations are then calculated using finite differences computed on a vertical two-dimensional grid that runs down the valley's axis. The pressure gradient term in the momentum equation is calculated from the temperature field by means of the hydrostatic equation. The friction term is then calculated as a residual in the xmomentum equation, and the diabatic cooling term is calculated as a residual in the thermal energy budget equation.The method is applied to data from an 8-km-long segment of Colorado's; Brush Creek Valley on the night of 30-31 July 1982. Pressure decreased with distance down the peak on horizontal surfaces, with peak horizontal pressure gradients of 0.04 hPa km1. The valley mass budget indicated that subsidence was required in the valley to support calculated mean along-valley mass flux divergence. Peak subsidence rates on the order of 0.10 m s1 were calculated. Subsiding motions in the valley produced negative vertical down-valley momentum fluxes in the upper valley atmosphere, but produced positive down-valley momentum fluxes below the level of the jet. Friction, calculated as a residual in the x momentum equation, was negative, as expected on physical grounds. and attained reasonable quantitative values.The strong subsidence field in the stable valley atmosphere produced subsidence warming that was only partly counteracted by down-valley cold air advection. Strong diabatic cooling was therefore required in order to account for the weak net cooling of the valley atmosphere during the nighttime period when tethered balloon observations

Effective Charge Carrier Utilization in Photocatalytic Conversions.

PubMed

Zhang, Peng; Wang, Tuo; Chang, Xiaoxia; Gong, Jinlong

2016-05-17

Continuous efforts have been devoted to searching for sustainable energy resources to alleviate the upcoming energy crises. Among various types of new energy resources, solar energy has been considered as one of the most promising choices, since it is clean, sustainable, and safe. Moreover, solar energy is the most abundant renewable energy, with a total power of 173 000 terawatts striking Earth continuously. Conversion of solar energy into chemical energy, which could potentially provide continuous and flexible energy supplies, has been investigated extensively. However, the conversion efficiency is still relatively low since complicated physical, electrical, and chemical processes are involved. Therefore, carefully designed photocatalysts with a wide absorption range of solar illumination, a high conductivity for charge carriers, a small number of recombination centers, and fast surface reaction kinetics are required to achieve a high activity. This Account describes our recent efforts to enhance the utilization of charge carriers for semiconductor photocatalysts toward efficient solar-to-chemical energy conversion. During photocatalytic reactions, photogenerated electrons and holes are involved in complex processes to convert solar energy into chemical energy. The initial step is the generation of charge carriers in semiconductor photocatalysts, which could be enhanced by extending the light absorption range. Integration of plasmonic materials and introduction of self-dopants have been proved to be effective methods to improve the light absorption ability of photocatalysts to produce larger amounts of photogenerated charge carriers. Subsequently, the photogenerated electrons and holes migrate to the surface. Therefore, acceleration of the transport process can result in enhanced solar energy conversion efficiency. Different strategies such as morphology control and conductivity improvement have been demonstrated to achieve this goal. Fine-tuning of the

Fretted Terrain Valley in Coloe Fossae Region

NASA Technical Reports Server (NTRS)

2006-01-01

[figure removed for brevity, see original site] Figure 1 Click on image for larger version

The image in figure 1 shows lineated valley fill in one of a series of enclosed, intersecting troughs known as Coloe (Choloe) Fossae. Lineated valley fill consists of rows of material in valley centers that are parallel to the valley walls. It is probably made of ice-rich material and boulders that are left behind when the ice-rich material sublimates. Very distinct rows can be seen near the south (bottom) wall of the valley. Lineated valley fill is thought to result from mass wasting (downslope movement) of ice-rich material from valley walls towards their centers. It is commonly found in valleys near the crustal dichotomy that separates the two hemispheres of Mars. The valley shown here joins four other valleys with lineated fill near the top left corner of this image. Their juncture is a topographic low, suggesting that the lineated valley fill from the different valleys may be flowing or creeping towards the low area (movement towards the upper left of the image). The valley walls appear smooth at first glance but are seen to be speckled with small craters several meters in diameter at HiRISE resolution (see contrast-enhanced subimage). This indicates that at least some of the wall material has been stable to mass wasting for some period of time. Also seen on the valley wall are elongated features shaped like teardrops. These are most likely slightly older craters that have been degraded due to potentially recent downhill creep. It is unknown whether the valley walls are shedding material today. The subimage is approximately 140 x 400 m (450 x 1280 ft).

Image PSP_001372_2160 was taken by the High Resolution Imaging Science Experiment (HiRISE) camera onboard the Mars Reconnaissance Orbiter spacecraft on November 11, 2006. The complete image is centered at 35.5 degrees latitude, 56.8 degrees East longitude. The range to the target site was 290.3 km (181

14 CFR 399.82 - Passing off of carrier identity by affiliation between carriers.

Code of Federal Regulations, 2010 CFR

2010-01-01

... 14 Aeronautics and Space 4 2010-01-01 2010-01-01 false Passing off of carrier identity by... Relating to Enforcement § 399.82 Passing off of carrier identity by affiliation between carriers. (a... points served by both carriers should preserve the identity of the individual carriers; (5) Where joint...

14 CFR 399.82 - Passing off of carrier identity by affiliation between carriers.

Code of Federal Regulations, 2011 CFR

2011-01-01

... 14 Aeronautics and Space 4 2011-01-01 2011-01-01 false Passing off of carrier identity by... Relating to Enforcement § 399.82 Passing off of carrier identity by affiliation between carriers. (a... points served by both carriers should preserve the identity of the individual carriers; (5) Where joint...

14 CFR 399.82 - Passing off of carrier identity by affiliation between carriers.

Code of Federal Regulations, 2014 CFR

2014-01-01

... 14 Aeronautics and Space 4 2014-01-01 2014-01-01 false Passing off of carrier identity by... Relating to Enforcement § 399.82 Passing off of carrier identity by affiliation between carriers. (a... points served by both carriers should preserve the identity of the individual carriers; (5) Where joint...

14 CFR 399.82 - Passing off of carrier identity by affiliation between carriers.

Code of Federal Regulations, 2012 CFR

2012-01-01

... 14 Aeronautics and Space 4 2012-01-01 2012-01-01 false Passing off of carrier identity by... Relating to Enforcement § 399.82 Passing off of carrier identity by affiliation between carriers. (a... points served by both carriers should preserve the identity of the individual carriers; (5) Where joint...

14 CFR 399.82 - Passing off of carrier identity by affiliation between carriers.

Code of Federal Regulations, 2013 CFR

2013-01-01

... 14 Aeronautics and Space 4 2013-01-01 2013-01-01 false Passing off of carrier identity by... Relating to Enforcement § 399.82 Passing off of carrier identity by affiliation between carriers. (a... points served by both carriers should preserve the identity of the individual carriers; (5) Where joint...

Methods and applications of electrical simulation in ground-water studies in the lower Arkansas and Verdigris River Valleys, Arkansas and Oklahoma

USGS Publications Warehouse

Bedinger, M.S.; Reed, J.E.; Wells, C.J.; Swafford, B.F.

1970-01-01

The Arkansas River Multiple-Purpose Plan will provide year-round navigation on the Arkansas River from near its mouth to Muskogee, Okla., and on the Verdigris River from Muskogee to Catoosa, Okla. The altered regimen in the Arkansas and Verdigris Rivers will affect ground-water conditions in the adjacent alluvial aquifers. In 1957 the U.S. Geological Survey and U.S. Army Corps of Engineers entered into a cooperative agreement for a comprehensive ground-water study of the lower Arkansas and Verdigris River valleys. At the request of the Corps of Engineers, the Geological Survey agreed to provide (1) basic ground-water data before, during, and after construction of the Multiple-Purpose Plan and (2) interpretation and projections of postconstruction ground-water conditions. The data collected were used by the Corps of Engineers in preliminary foundation and excavation estimates and by the Geological Survey as the basis for defining the hydrologic properties of, and the ground-water conditions in, the aquifer. The projections of postconstruction ground-water conditions were used by the Corps of Engineers in the planning, design, construction, and operation of the Multiple-Purpose Plan. Analysis and projections of ground-water conditions were made by use of electrical analog models. These models use the analogy between the flow of electricity in a resistance-capacitance circuit and the flow of a liquid in a porous and permeable medium. Verification provides a test of the validity of the analog to perform as the aquifer would, within the range of historic forces. The verification process consists of simulating the action of historic forces which have acted upon the aquifer and of duplicating the aquifer response with the analog. The areal distribution of accretion can be treated as an unknown and can be determined by analog simulation of the piezometric surface in an aquifer. Comparison of accretion with depth to piezometric surface below land surface shows that

Victor Valley College Agreement between the Victor Valley Community College District and the Victor Valley College California Teachers Association Chapter 1170. July 1989 - June 1992.

ERIC Educational Resources Information Center

Victor Valley Community Coll. District, Victorville, CA.

The collective bargaining agreement between the Victor Valley College Board of Trustees and the Victor Valley College California Teachers Association/National Education Association is presented. This contract, covering the period from July 1989 through June 1992, deals with the following topics: bargaining agent recognition; district and…

Valley spin polarization of Tl/Si(111)

NASA Astrophysics Data System (ADS)

Stolwijk, Sebastian D.; Schmidt, Anke B.; Sakamoto, Kazuyuki; Krüger, Peter; Donath, Markus

2017-11-01

The metal/semiconductor hybrid system Tl/Si(111)-(1 ×1 ) exhibits a unique Tl-derived surface state with remarkable properties. It lies within the silicon band gap and forms spin-momentum-locked valleys close to the Fermi energy at the K ¯ and K¯' points. These valleys are completely spin polarized with opposite spin orientation at K ¯ and K¯' and show a giant spin splitting of more than 0.5 eV. We present a detailed preparation study of the surface system and demonstrate that the electronic valleys are extremely robust, surviving exposure to 100 L hydrogen and 500 L oxygen. We investigate the influence of additional Tl atoms on the spin-polarized valleys. By combining photoemission and inverse photoemission, we prove the existence of fully spin-polarized valleys crossing the Fermi level. Moreover, these metallic valleys carry opposite Berry curvature at K ¯ and K¯', very similar to WSe2, promising a large spin Hall effect. Thus, Tl/Si(111)-(1 ×1 ) possesses all necessary key properties for spintronic applications.

Observation of valley-dependent beams in photonic graphene.

PubMed

Deng, Fusheng; Sun, Yong; Wang, Xiao; Xue, Rui; Li, Yuan; Jiang, Haitao; Shi, Yunlong; Chang, Kai; Chen, Hong

2014-09-22

Valley-dependent propagation of light in an artificial photonic hexagonal lattice, akin to electrons in graphene, is investigated in microwave regime. Both numerical and experimental results show that the valley degeneracy in the photonic graphene is broken when the frequency is away from the Dirac point. The peculiar anisotropic wave transport property due to distinct valleys is analyzed using the equifrequency contours. More interestingly, the valley-dependent self-collimation and beam splitting phenomena are experimentally demonstrated with the armchair and zigzag interfaces, respectively. Our results confirm that there are two inequivalent Dirac points that lead to two distinct valleys in photonic graphene, which could be used to control the flow of light and might be used to carry information in valley polarized beam splitter, collimator or guiding device.

Drift of charge carriers in crystalline organic semiconductors

NASA Astrophysics Data System (ADS)

Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

2016-04-01

We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ˜105 V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

Drift of charge carriers in crystalline organic semiconductors.

PubMed

Dong, Jingjuan; Si, Wei; Wu, Chang-Qin

2016-04-14

We investigate the direct-current response of crystalline organic semiconductors in the presence of finite external electric fields by the quantum-classical Ehrenfest dynamics complemented with instantaneous decoherence corrections (IDC). The IDC is carried out in the real-space representation with the energy-dependent reweighing factors to account for both intermolecular decoherence and energy relaxation by which conduction occurs. In this way, both the diffusion and drift motion of charge carriers are described in a unified framework. Based on an off-diagonal electron-phonon coupling model for pentacene, we find that the drift velocity initially increases with the electric field and then decreases at higher fields due to the Wannier-Stark localization, and a negative electric-field dependence of mobility is observed. The Einstein relation, which is a manifestation of the fluctuation-dissipation theorem, is found to be restored in electric fields up to ∼10(5) V/cm for a wide temperature region studied. Furthermore, we show that the incorporated decoherence and energy relaxation could explain the large discrepancy between the mobilities calculated by the Ehrenfest dynamics and the full quantum methods, which proves the effectiveness of our approach to take back these missing processes.

27 CFR 9.58 - Carmel Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

....” (b) Approved maps. The approved maps for determining the boundary of the Carmel Valley viticultural... Ridge, Calif., dated 1956; and (5) Rana Creek, Calif., dated 1956. (c) Boundary. The Carmel Valley...

27 CFR 9.58 - Carmel Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

....” (b) Approved maps. The approved maps for determining the boundary of the Carmel Valley viticultural... Ridge, Calif., dated 1956; and (5) Rana Creek, Calif., dated 1956. (c) Boundary. The Carmel Valley...

Water resources of Parowan Valley, Iron County, Utah

USGS Publications Warehouse

Marston, Thomas M.

2017-08-29

Parowan Valley, in Iron County, Utah, covers about 160 square miles west of the Red Cliffs and includes the towns of Parowan, Paragonah, and Summit. The valley is a structural depression formed by northwest-trending faults and is, essentially, a closed surface-water basin although a small part of the valley at the southwestern end drains into the adjacent Cedar Valley. Groundwater occurs in and has been developed mainly from the unconsolidated basin-fill aquifer. Long-term downward trends in groundwater levels have been documented by the U.S. Geological Survey (USGS) since the mid-1950s. The water resources of Parowan Valley were assessed during 2012 to 2014 with an emphasis on refining the understanding of the groundwater and surface-water systems and updating the groundwater budget.Surface-water discharge of five perennial mountain streams that enter Parowan Valley was measured from 2013 to 2014. The total annual surface-water discharge of the five streams during 2013 to 2014 was about 18,000 acre-feet (acre-ft) compared to the average annual streamflow of about 22,000 acre-ft from USGS streamgages operated on the three largest of these streams from the 1940s to the 1980s. The largest stream, Parowan Creek, contributes more than 50 percent of the annual surface-water discharge to the valley, with smaller amounts contributed by Red, Summit, Little, and Cottonwood Creeks.Average annual recharge to the Parowan Valley groundwater system was estimated to be about 25,000 acre-ft from 1994 to 2013. Nearly all recharge occurs as direct infiltration of snowmelt and rainfall on the Markagunt Plateau east of the valley. Smaller amounts of recharge occur as infiltration of streamflow and unconsumed irrigation water near the east side of the valley on alluvial fans associated with mountain streams at the foot of the Red Cliffs. Subsurface flow from the mountain block to the east of the valley is a significant source of groundwater recharge to the basin-fill aquifer

Origin of the Valley Networks On Mars: A Hydrological Perspective

NASA Technical Reports Server (NTRS)

Gulick, Virginia C.

2000-01-01

The geomorphology of the Martian valley networks is examined from a hydrological perspective for their compatibility with an origin by rainfall, globally higher heat flow, and localized hydrothermal systems. Comparison of morphology and spatial distribution of valleys on geologic surfaces with terrestrial fluvial valleys suggests that most Martian valleys are probably not indicative of a rainfall origin, nor are they indicative of formation by an early global uniformly higher heat flow. In general, valleys are not uniformly distributed within geologic surface units as are terrestrial fluvial valleys. Valleys tend to form either as isolated systems or in clusters on a geologic surface unit leaving large expanses of the unit virtually untouched by erosion. With the exception of fluvial valleys on some volcanoes, most Martian valleys exhibit a sapping morphology and do not appear to have formed along with those that exhibit a runoff morphology. In contrast, terrestrial sapping valleys form from and along with runoff valleys. The isolated or clustered distribution of valleys suggests localized water sources were important in drainage development. Persistent ground-water outflow driven by localized, but vigorous hydrothermal circulation associated with magmatism, volcanism, impacts, or tectonism is, however, consistent with valley morphology and distribution. Snowfall from sublimating ice-covered lakes or seas may have provided an atmospheric water source for the formation of some valleys in regions where the surface is easily eroded and where localized geothermal/hydrothermal activity is sufficient to melt accumulated snowpacks.

EPA Region 1 - Valley Depth in Meters

EPA Pesticide Factsheets

Raster of the Depth in meters of EPA-delimited Valleys in Region 1.Valleys (areas that are lower than their neighbors) were extracted from a Digital Elevation Model (USGS, 30m) by finding the local average elevation, subtracting the actual elevation from the average, and selecting areas where the actual elevation was below the average. The landscape was sampled at seven scales (circles of 1, 2, 4, 7, 11, 16, and 22 km radius) to take into account the diversity of valley shapes and sizes. Areas selected in at least four scales were designated as valleys.

Experimental study of the minority-carrier transport at the polysilicon-monosilicon interface

NASA Astrophysics Data System (ADS)

Neugroschel, A.; Arienzo, M.; Isaac, R. D.; Komem, Y.

1985-04-01

This paper presents the results of an experimental study designed to explore both qualitatively and quantitatively the mechanism of the improved current gain in bipolar transistors with polysilicon emitter contacts. Polysilicon contacts were deposited and heat treated at different conditions. The electrical properties were measured using p-n junction test structures that are much more sensitive to the contact properties than are bipolar transistors. A simple phenomenological model was used to correlate the structural properties with electrical measurements. Possible transport mechanisms are examined and estimates are made about upper bounds on transport parameters in the principal regions of the devices. The main conclusion of this study is that the minority-carrier transport in the polycrystalline silicon is dominated by a highly disordered layer at the polysilicon-monosilicon interface characterized by very low minority-carrier mobility. The effective recombination velocity at the n(+) polysilicon-n(+) monosilicon interface was found to be a strong function of fabrication conditions. The results indicate that the recombination velocity can be much smaller than 10,000 cm/s.

Preliminary hydrogeologic assessment near the boundary of the Antelope Valley and El Mirage Valley groundwater basins, California

USGS Publications Warehouse

Stamos, Christina L.; Christensen, Allen H.; Langenheim, Victoria

2017-07-19

The increasing demands on groundwater for water supply in desert areas in California and the western United States have resulted in the need to better understand groundwater sources, availability, and sustainability. This is true for a 650-square-mile area that encompasses the Antelope Valley, El Mirage Valley, and Upper Mojave River Valley groundwater basins, about 50 miles northeast of Los Angeles, California, in the western part of the Mojave Desert. These basins have been adjudicated to ensure that groundwater rights are allocated according to legal judgments. In an effort to assess if the boundary between the Antelope Valley and El Mirage Valley groundwater basins could be better defined, the U.S. Geological Survey began a cooperative study in 2014 with the Mojave Water Agency to better understand the hydrogeology in the area and investigate potential controls on groundwater flow and availability, including basement topography.Recharge is sporadic and primarily from small ephemeral washes and streams that originate in the San Gabriel Mountains to the south; estimates range from about 400 to 1,940 acre-feet per year. Lateral underflow from adjacent basins has been considered minor in previous studies; underflow from the Antelope Valley to the El Mirage Valley groundwater basin has been estimated to be between 100 and 1,900 acre-feet per year. Groundwater discharge is primarily from pumping, mostly by municipal supply wells. Between October 2013 and September 2014, the municipal pumpage in the Antelope Valley and El Mirage Valley groundwater basins was reported to be about 800 and 2,080 acre-feet, respectively.This study was motivated by the results from a previously completed regional gravity study, which suggested a northeast-trending subsurface basement ridge and saddle approximately 3.5 miles west of the boundary between the Antelope Valley and El Mirage Valley groundwater basins that might influence groundwater flow. To better define potential basement

Monolithic carrier-envelope phase-stabilization scheme.

PubMed

Fuji, Takao; Rauschenberger, Jens; Apolonski, Alexander; Yakovlev, Vladislav S; Tempea, Gabriel; Udem, Thomas; Gohle, Christoph; Hänsch, Theodor W; Lehnert, Walter; Scherer, Michael; Krausz, Ferenc

2005-02-01

A new scheme for stabilizing the carrier-envelope (CE) phase of a few-cycle laser pulse train is demonstrated. Self-phase modulation and difference-frequency generation in a single periodically poled lithium niobate crystal that transmits the main laser beam allows CE phase locking directly in the usable output. The monolithic scheme obviates the need for splitting off a fraction of the laser output for CE phase control, coupling into microstructured fiber, and separation and recombination of spectral components. As a consequence, the output yields 6-fs, 800-nm pulses with an unprecedented degree of short- and long-term reproducibility of the electric field waveform.

Hot-carrier trap-limited transport in switching chalcogenides

NASA Astrophysics Data System (ADS)

Piccinini, Enrico; Cappelli, Andrea; Buscemi, Fabrizio; Brunetti, Rossella; Ielmini, Daniele; Rudan, Massimo; Jacoboni, Carlo

2012-10-01

Chalcogenide materials have received great attention in the last decade owing to their application in new memory systems. Recently, phase-change memories have, in fact, reached the early stages of production. In spite of the industrial exploitation of such materials, the physical processes governing the switching mechanism are still debated. In this paper, we work out a complete and consistent model for transport in amorphous chalcogenide materials based on trap-limited conduction accompanied by carrier heating. A previous model is here extended to include position-dependent carrier concentration and field, consistently linked by the Poisson equation. The results of the new model reproduce the experimental electrical characteristics and their dependences on the device length and temperature. Furthermore, the model provides a sound physical interpretation of the switching phenomenon and is able to give an estimate of the threshold condition in terms of the material parameters, a piece of information of great technological interest.

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

PubMed Central

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-01-01

Abstract The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm−2 and 7 × 1014 cm−2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm−2 and 2 × 1013 cm−2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10–13 cm2 V−1 s−1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500–700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm−3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500–700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration. PMID:28567175

Carrier properties of B atomic-layer-doped Si films grown by ECR Ar plasma-enhanced CVD without substrate heating

NASA Astrophysics Data System (ADS)

Sakuraba, Masao; Sugawara, Katsutoshi; Nosaka, Takayuki; Akima, Hisanao; Sato, Shigeo

2017-12-01

The atomic-layer (AL) doping technique in epitaxy has attracted attention as a low-resistive ultrathin semiconductor film as well as a two-dimensional (2-D) carrier transport system. In this paper, we report carrier properties for B AL-doped Si films with suppressed thermal diffusion. B AL-doped Si films were formed on Si(100) by B AL formation followed by Si cap layer deposition in low-energy Ar plasma-enhanced chemical-vapor deposition without substrate heating. After fabrication of Hall-effect devices with the B AL-doped Si films on unstrained and 0.8%-tensile-strained Si(100)-on-insulator substrates (maximum process temperature 350°C), carrier properties were electrically measured at room temperature. Typically for the initial B amount of 2 × 1014 cm-2 and 7 × 1014 cm-2, B concentration depth profiles showed a clear decay slope as steep as 1.3 nm/decade. Dominant carrier was a hole and the maximum sheet carrier densities as high as 4 × 1013 cm-2 and 2 × 1013 cm-2 (electrical activity ratio of about 7% and 3.5%) were measured respectively for the unstrained and 0.8%-tensile-strained Si with Hall mobility around 10-13 cm2 V-1 s-1. Moreover, mobility degradation was not observed even when sheet carrier density was increased by heat treatment at 500-700 °C. There is a possibility that the local carrier (ionized B atom) concentration around the B AL in Si reaches around 1021 cm-3 and 2-D impurity-band formation with strong Coulomb interaction is expected. The behavior of carrier properties for heat treatment at 500-700 °C implies that thermal diffusion causes broadening of the B AL in Si and decrease of local B concentration.

Influence of topological transitions in a quantizing magnetic field and anisotropy of current carrier scattering by acoustic phonons on the longitudinal electrical conductivity of layered crystals with open fermi surfaces

NASA Astrophysics Data System (ADS)

Gorskii, P. V.

2011-03-01

It is demonstrated that the dependence of Fermi's energy on the magnetic field causes a set of the Shubnikov - de Haas (SDH) oscillation frequencies to change, and their relative contribution to the total longitudinal conductivity of layered crystals depends on whether the scattering of current carriers is isotropic or anisotropic. Owing to the topological transition in a strong magnetic field, Fermi's surface (FS) is transformed from open into closed one and is compressed in the magnetic field direction. Therefore, in an ultraquantum limit, disregarding the Dingle factor, the longitudinal electrical conductivity of the layered crystal tends to zero as a reciprocal square of the magnetic field for the isotropic scattering and as a reciprocal cube of the magnetic field for the anisotropic scattering. All calculations are performed in the approximation of relaxation time considered to be constant versus the quantum numbers for the isotropic scattering and proportional to the longitudinal velocity of current carriers for the anisotropic scattering.

Geology and water resources of Owens Valley, California

USGS Publications Warehouse

Hollett, Kenneth J.; Danskin, Wesley R.; McCaffrey, William F.; Walti, Caryl L.

1991-01-01

Owens Valley, a long, narrow valley located along the east flank of the Sierra Nevada in east-central California, is the main source of water for the city of Los Angeles. The city diverts most of the surface water in the valley into the Owens River-Los Angeles Aqueduct system, which transports the water more than 200 miles south to areas of distribution and use. Additionally, ground water is pumped or flows from wells to supplement the surface-water diversions to the river-aqueduct system. Pumpage from wells needed to supplement water export has increased since 1970, when a second aqueduct was put into service, and local concerns have been expressed that the increased pumpage may have had a detrimental effect on the environment and the indigenous alkaline scrub and meadow plant communities in the valley. The scrub and meadow communities depend on soil moisture derived from precipitation and the unconfined part of a multilayered aquifer system. This report, which describes the hydrogeology of the aquifer system and the water resources of the valley, is one in a series designed to (1) evaluate the effects that groundwater pumping has on scrub and meadow communities and (2) appraise alternative strategies to mitigate any adverse effects caused by, pumping. Two principal topographic features are the surface expression of the geologic framework--the high, prominent mountains on the east and west sides of the valley and the long, narrow intermountain valley floor. The mountains are composed of sedimentary, granitic, and metamorphic rocks, mantled in part by volcanic rocks as well as by glacial, talus, and fluvial deposits. The valley floor is underlain by valley fill that consists of unconsolidated to moderately consolidated alluvial fan, transition-zone, glacial and talus, and fluvial and lacustrine deposits. The valley fill also includes interlayered recent volcanic flows and pyroclastic rocks. The bedrock surface beneath the valley fill is a narrow, steep-sided graben

Geohydrology of the Unconsolidated Valley-Fill Aquifer in the Meads Creek Valley, Schuyler and Steuben Counties, New York

USGS Publications Warehouse

Miller, Todd S.; Bugliosi, Edward F.; Reddy, James E.

2008-01-01

The Meads Creek valley encompasses 70 square miles of predominantly forested uplands in the upper Susquehanna River drainage basin. The valley, which was listed as a Priority Waterbody by the New York State Department of Environmental Conservation in 2004, is prone to periodic flooding, mostly in its downstream end, where development is occurring most rapidly. Hydraulic characteristics of the unconsolidated valley-fill aquifer were evaluated, and seepage rates in losing and gaining tributaries were calculated or estimated, in an effort to delineate the aquifer geometry and identify the factors that contribute to flooding. Results indicated that (1) Meads Creek gained about 61 cubic feet of flow per second (about 6.0 cubic feet per second per mile of stream channel) from ground-water discharge and inflow from tributaries in its 10.2-mile reach between the northernmost and southernmost measurement sites; (2) major tributaries in the northern part of the valley are not significant sources of recharge to the aquifer; and (3) major tributaries in the central and southern part of the valley provide recharge to the aquifer. The ground-water portion of streamflow in Meads Creek (excluding tributary inflow) was 11.3 cubic feet per second (ft3/s) in the central part of the valley and 17.2 ft3/s in the southern part - a total of 28.5 ft3/s. Ground-water levels were measured in 29 wells finished in unconfined deposits for construction of a potentiometric-surface map to depict directions of ground-water flow within the valley. In general, ground water flows from the edges of the valley toward Meads Creek and ultimately discharges to it. The horizontal hydraulic gradient for the entire 12-mile-long aquifer averages about 30 feet per mile, whereas the gradient in the southern fourth of the valley averages about half that - about 17 feet per mile. A water budget for the aquifer indicated that 28 percent of recharge was derived from precipitation that falls on the aquifer, 32

Mapping Free-Carriers in Multijunction Silicon Nanowires Using Infrared Near-Field Optical Microscopy.

PubMed

Ritchie, Earl T; Hill, David J; Mastin, Tucker M; Deguzman, Panfilo C; Cahoon, James F; Atkin, Joanna M

2017-11-08

We report the use of infrared (IR) scattering-type scanning near-field optical microscopy (s-SNOM) as a nondestructive method to map free-carriers in axially modulation-doped silicon nanowires (SiNWs) with nanoscale spatial resolution. Using this technique, we can detect local changes in the electrically active doping concentration based on the infrared free-carrier response in SiNWs grown using the vapor-liquid-solid (VLS) method. We demonstrate that IR s-SNOM is sensitive to both p-type and n-type free-carriers for carrier densities above ∼1 × 10 19 cm -3 . We also resolve subtle changes in local conductivity properties, which can be correlated with growth conditions and surface effects. The use of s-SNOM is especially valuable in low mobility materials such as boron-doped p-type SiNWs, where optimization of growth has been difficult to achieve due to the lack of information on dopant distribution and junction properties. s-SNOM can be widely employed for the nondestructive characterization of nanostructured material synthesis and local electronic properties without the need for contacts or inert atmosphere.

Enhanced piezoelectric operation of NiO/GaN heterojunction generator by suppressed internal carrier screening

NASA Astrophysics Data System (ADS)

Jeong, Dae Kyung; Kang, Jin-Ho; Ha, Jun-Seok; Ryu, Sang-Wan

2017-10-01

A NiO/GaN heterojunction piezoelectric generator was fabricated, and the improvement in device performance was analyzed. The electrical properties of NiO were varied by regulating the gas environment during sputtering. An optimized NiO layer was adopted for high piezoelectric voltage generation. Internal carrier screening was revealed to be the dominant mechanism degrading the piezoelectric performance, necessitating the suppression of carrier screening. The highly resistive NiO layer was advantageous in the suppression of carrier transport across the junction that screened the piezoelectric field. The maximum piezoelectric voltage and current density values obtained were 7.55 V and 1.14 µA cm-2, respectively. The power obtained was sufficient to operate a light-emitting diode combined with a charging circuit.

Observation of valley-selective microwave transport in photonic crystals

NASA Astrophysics Data System (ADS)

Ye, Liping; Yang, Yuting; Hong Hang, Zhi; Qiu, Chunyin; Liu, Zhengyou

2017-12-01

Recently, the discrete valley degree of freedom has attracted extensive attention in condensed matter physics. Here, we present an experimental observation of the intriguing valley transport for microwaves in photonic crystals, including the bulk valley transport and the valley-projected edge modes along the interface separating different photonic insulating phases. For both cases, valley-selective excitations are realized by a point-like chiral source located at proper locations inside the samples. Our results are promising for exploring unprecedented routes to manipulate microwaves.

Carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool

NASA Astrophysics Data System (ADS)

Cai, Yu; Sha, Shuang

2016-09-01

This paper proposes a new carrier-interleaved orthogonal multi-electrode multi-carrier resistivity-measurement tool used in a cylindrical borehole environment during oil-based mud drilling processes. The new tool is an orthogonal frequency division multiplexing access-based contactless multi-measurand detection tool. The tool can measure formation resistivity in different azimuthal angles and elevational depths. It can measure many more measurands simultaneously in a specified bandwidth than the legacy frequency division multiplexing multi-measurand tool without a channel-select filter while avoiding inter-carrier interference. The paper also shows that formation resistivity is not sensitive to frequency in certain frequency bands. The average resistivity collected from N subcarriers can increase the measurement of the signal-to-noise ratio (SNR) by N times given no amplitude clipping in the current-injection electrode. If the clipping limit is taken into account, with the phase rotation of each single carrier, the amplitude peak-to-average ratio can be reduced by 3 times, and the SNR can achieve a 9/N times gain over the single-carrier system. The carrier-interleaving technique is also introduced to counter the carrier frequency offset (CFO) effect, where the CFO will cause inter-pad interference. A qualitative analysis and simulations demonstrate that block-interleaving performs better than tone-interleaving when coping with a large CFO. The theoretical analysis also suggests that increasing the subcarrier number can increase the measurement speed or enhance elevational resolution without sacrificing receiver performance. The complex orthogonal multi-pad multi-carrier resistivity logging tool, in which all subcarriers are complex signals, can provide a larger available subcarrier pool than other types of transceivers.

California's Central Valley Groundwater Study: A Powerful New Tool to Assess Water Resources in California's Central Valley

USGS Publications Warehouse

Faunt, Claudia C.; Hanson, Randall T.; Belitz, Kenneth; Rogers, Laurel

2009-01-01

Competition for water resources is growing throughout California, particularly in the Central Valley. Since 1980, the Central Valley's population has nearly doubled to 3.8 million people. It is expected to increase to 6 million by 2020. Statewide population growth, anticipated reductions in Colorado River water deliveries, drought, and the ecological crisis in the Sacramento-San Joaquin Delta have created an intense demand for water. Tools and information can be used to help manage the Central Valley aquifer system, an important State and national resource.

A way for studying the impact of PEDOT:PSS interface layer on carrier transport in PCDTBT:PC71BM bulk hetero junction solar cells by electric field induced optical second harmonic generation measurement

NASA Astrophysics Data System (ADS)

Ahmad, Zubair; Abdullah, Shahino Mah; Taguchi, Dai; Sulaiman, Khaulah; Iwamoto, Mitsumasa

2015-04-01

Electric-field-induced optical second-harmonic generation (EFISHG) measurement was employed to study the impact of poly(3,4-ethylenedioxythiophene)-polystyrene sulfonate (PEDOT:PSS) interface layer on the carrier transport mechanism of the PCDTBT:PC71BM bulk heterojunction (BHJ) organic solar cells (OSCs). We revealed that the electric fields in the PCDTBT and PC71BM were allowed to be measured individually by choosing fundamental laser wavelengths of 1000 nm and 1060 nm, respectively, in dark and under illumination. The results showed that the direction of the internal electric fields in the PCDTBT:PC71BM BHJ layer is reversed by introducing the PEDOT:PSS layer, and this results in longer electron transport time in the BHJ layer. We conclude that TR-EFISHG can be used as a novel way for studying the impact of interfacial layer on the transport of electrons and holes in the bulk-heterojunction OSCs.

27 CFR 9.90 - Willamette Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

...) “Roseburg,” Location Diagram NL 10-2, 1958 (revised 1970). (c) Boundaries. The Willamette Valley... valleys of Little River, Mosby Creek, Sharps Creek and Lost Creek to the intersection of R1W/R1E and State...

Valley photonic crystals for control of spin and topology

NASA Astrophysics Data System (ADS)

Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang

2017-03-01

Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley-spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.

A review of empirical evidence on different uncanny valley hypotheses: support for perceptual mismatch as one road to the valley of eeriness

PubMed Central

Kätsyri, Jari; Förger, Klaus; Mäkäräinen, Meeri; Takala, Tapio

2015-01-01

The uncanny valley hypothesis, proposed already in the 1970s, suggests that almost but not fully humanlike artificial characters will trigger a profound sense of unease. This hypothesis has become widely acknowledged both in the popular media and scientific research. Surprisingly, empirical evidence for the hypothesis has remained inconsistent. In the present article, we reinterpret the original uncanny valley hypothesis and review empirical evidence for different theoretically motivated uncanny valley hypotheses. The uncanny valley could be understood as the naïve claim that any kind of human-likeness manipulation will lead to experienced negative affinity at close-to-realistic levels. More recent hypotheses have suggested that the uncanny valley would be caused by artificial–human categorization difficulty or by a perceptual mismatch between artificial and human features. Original formulation also suggested that movement would modulate the uncanny valley. The reviewed empirical literature failed to provide consistent support for the naïve uncanny valley hypothesis or the modulatory effects of movement. Results on the categorization difficulty hypothesis were still too scarce to allow drawing firm conclusions. In contrast, good support was found for the perceptual mismatch hypothesis. Taken together, the present review findings suggest that the uncanny valley exists only under specific conditions. More research is still needed to pinpoint the exact conditions under which the uncanny valley phenomenon manifests itself. PMID:25914661

Hybrid-Type Organic Thermoelectric Materials Containing Nanoparticles as a Carrier Transport Promoter

NASA Astrophysics Data System (ADS)

Oshima, Keisuke; Inoue, Junta; Sadakata, Shifumi; Shiraishi, Yukihide; Toshima, Naoki

2017-05-01

Carbon nanotubes (CNTs) have recently received much attention as thermoelectric materials. Although the carrier mobility within a single CNT is very high, the charge carrier transport between CNTs is quite slow. We have utilized nanoparticles (NPs) for promotion of the carrier transport between CNTs for improving their thermoelectric performance. Poly(vinyl chloride) (PVC) was used as a binder of the CNTs. Thus, hybrid-type organic thermoelectric materials containing the NPs were constructed from Pd NPs, CNTs, and PVC. The thermoelectric properties were slightly improved in the three-component films by only mixing the separately-prepared Pd NPs. The NPs of a polymer complex, poly(nickel 1,1,2,2-ethenetetrathiolate) (n-PETT), were also used as a charge carrier transport promoter instead of the Pd NPs to produce n-PETT/CNT/PVC hybrid films. Treatment of the three-component films with methanol produced a high thermoelectric power factor and low thermal conductivity, resulting in a high "apparent" thermoelectric performance ( ZT ˜ 0.3 near room temperature) although the thermal conductivity was measured in the through-plane direction, which is a different direction from that for the electrical conductivity.

Gravity survey of Dixie Valley, west-central Nevada

USGS Publications Warehouse

Schaefer, Donald H.

1983-01-01

Dixie Valley, a northeast-trending structural trough typical of valleys in the Basin and Range Province, is filled with a maximum of about 10,000 feet of alluvial and lacustrine deposits , as estimated from residual-gravity measurements obtained in this study. On the basis of gravity measurements at 300 stations on nine east-west profiles, the gravity residuals reach a maximum of 30 milligals near the south-central part of the valley. Results from a three-dimensional inversion model indicate that the central depression of the valley is offset to the west of the geographic axis. This offset is probably due to major faulting along the west side of the valley adjacent to the Stillwater Range. Comparison of depths to bedrock obtained during this study and depths obtained from a previous seismic-refraction study indicates a reasonably good correlation. A heterogeneous distribution of densities within the valley-fill deposits would account for differing depths determined by the two methods. (USGS)

Do methicillin resistant staphylococcus (MRSA) carrier patients influence MRSA infection more than MRSA-carrier medical officers and MRSA-carrier family?

PubMed

Dilogo, Ismail H; Arya, Abikara; Phedy; Loho, Tony

2013-07-01

to determine the rate of MRSA-carrier among patients, family members and health care providers, and the association between MRSA-carrier family members and health care providers on MRSA infection patient after orthopaedic surgery. this is a cross-sectional analytical study. Samples were taken consecutively during December 2010 to December 2011, consisting of postoperative patients infected with MRSA, attending family members, and the medical officers with history of contact with the patient. Swab culture were taken from nasal and axilla of all subjects. The incidence of MRSA infection, and MRSA-carrier on the patient, family members and medical officers were presented descriptively, while their association with MRSA infection was statistically tested using Fischer exact test. during the study period, there were 759 surgeries, with 4 (0.5%) patients were identified to have MRSA infection. Of these four cases, 48 subjects were enrolled. The rate of MRSA-carrier among patients, family and health care providers were 50%, 25% and 0% respectively. There were no significant association between MRSA and the rates of MRSA-carrier on the family member or health care providers. the incidence of MRSA infection, MRSA-carrier patient, MRSA-carrier health care providers, and family member carrier were 0.5%, 50%, 0%, and 25% respectively. No significant association found between MRSA-carrier on the family member or health care providers and MRSA infection patient. There were no MRSA infection found on the health care provider.

Imaging charge carriers in potential-induced degradation defects of c-Si solar cells by scanning capacitance microscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jiang, C. -S.; Xiao, C.; Moutinho, H. R.

We report on nm-resolution imaging of charge-carrier distribution around local potential-induced degradation (PID) shunting defects using scanning capacitance microscopy. We imaged on cross sections of heavily field-degraded module areas, cored out and selected by mm-scale photoluminescence imaging. We found localized areas with abnormal carrier behavior induced by the PID defects: the apparent n-type carrier extends vertically into the absorber to ~1-2 um from the cell surface, and laterally in similar lengths; in defect-free areas, the n-type carrier extends ~0.5 um, which is consistent with the junction depth. For comparison, we also investigated areas of the same module exhibiting the leastmore » PID stress, and we found no such heavily damaged junction area. Instead, we found slightly abnormal carrier behavior, where the carrier-type inversion in the absorber did not occur, but the p-type carrier concentration changed slightly in a much smaller lateral length of ~300 nm. These nano-electrical findings may indicate a possible mechanism that the existing extended defects, which may not be significantly harmful to cell performance, can be changed by PID to heavily damaged junction areas.« less

Imaging charge carriers in potential-induced degradation defects of c-Si solar cells by scanning capacitance microscopy

DOE PAGES

Jiang, C. -S.; Xiao, C.; Moutinho, H. R.; ...

2018-02-13

We report on nm-resolution imaging of charge-carrier distribution around local potential-induced degradation (PID) shunting defects using scanning capacitance microscopy. We imaged on cross sections of heavily field-degraded module areas, cored out and selected by mm-scale photoluminescence imaging. We found localized areas with abnormal carrier behavior induced by the PID defects: the apparent n-type carrier extends vertically into the absorber to ~1-2 um from the cell surface, and laterally in similar lengths; in defect-free areas, the n-type carrier extends ~0.5 um, which is consistent with the junction depth. For comparison, we also investigated areas of the same module exhibiting the leastmore » PID stress, and we found no such heavily damaged junction area. Instead, we found slightly abnormal carrier behavior, where the carrier-type inversion in the absorber did not occur, but the p-type carrier concentration changed slightly in a much smaller lateral length of ~300 nm. These nano-electrical findings may indicate a possible mechanism that the existing extended defects, which may not be significantly harmful to cell performance, can be changed by PID to heavily damaged junction areas.« less

Injection deep level transient spectroscopy: An improved method for measuring capture rates of hot carriers in semiconductors

DOE PAGES

Fleming, R. M.; Seager, C. H.; Lang, D. V.; ...

2015-07-02

In this study, an improved method for measuring the cross sections for carrier trapping at defects in semiconductors is described. This method, a variation of deep level transient spectroscopy(DLTS) used with bipolar transistors, is applied to hot carrier trapping at vacancy-oxygen, carbon-oxygen, and three charge states of divacancy centers (V 2) in n- and p-type silicon. Unlike standard DLTS, we fill traps by injecting carriers into the depletion region of a bipolar transistor diode using a pulse of forward bias current applied to the adjacent diode. We show that this technique is capable of accurately measuring a wide range ofmore » capture cross sections at varying electric fields due to the control of the carrier density it provides. Because this technique can be applied to a variety of carrier energy distributions, it should be valuable in modeling the effect of radiation-induced generation-recombination currents in bipolar devices.« less

Napa Valley Community College District and Napa Valley College Faculty Association/CTA/NEA 1988-89 Agreement.

ERIC Educational Resources Information Center

Napa Valley Community Coll. District, Napa, CA.

The collective bargaining agreement between the Board of Trustees of the Napa Valley Community College District and the Napa Valley College Faculty Association/California Teachers Association/National Education Association is presented. This contract, in effect from June 1988 through July 1989, deals with the following topics: bargaining agent…

Channels and valleys on Mars

NASA Technical Reports Server (NTRS)

Baker, V. R.

1983-01-01

Tentative conclusions about the origins of channels and valleys on Mars based on the consensus of investigators who have studied the problem are presented. The morphology of outflow channels is described in detail, and the morphology, distribution, and genesis of Martian valleys are addressed. Secondary modification of channels and valleys by mass-wasting phenomena, eolian processes, cratering, and mantling by lava flows is discussed. The physics of the flows needed to account for the immense volumes of Martian outflow channels is considered in detail, including the possible influence of debris flows and mudflows, glaciers, and ice sheets. It is concluded that Mars once probably possessed an atmosphere with higher temperatures and pressures than at present which played an essential role in an active hydrological cycle.

The geochemistry of groundwater resources in the Jordan Valley: The impact of the Rift Valley brines

USGS Publications Warehouse

Farber, E.; Vengosh, A.; Gavrieli, I.; Marie, Amarisa; Bullen, T.D.; Mayer, B.; Polak, A.; Shavit, U.

2007-01-01

The chemical composition of groundwater in the Jordan Valley, along the section between the Sea of Galilee and the Dead Sea, is investigated in order to evaluate the origin of the groundwater resources and, in particular, to elucidate the role of deep brines on the chemical composition of the regional groundwater resources in the Jordan Valley. Samples were collected from shallow groundwater in research boreholes on two sites in the northern and southern parts of the Jordan Valley, adjacent to the Jordan River. Data is also compiled from previous published studies. Geochemical data (e.g., Br/Cl, Na/Cl and SO4/Cl ratios) and B, O, Sr and S isotopic compositions are used to define groundwater groups, to map their distribution in the Jordan valley, and to evaluate their origin. The combined geochemical tools enabled the delineation of three major sources of solutes that differentially affect the quality of groundwater in the Jordan Valley: (1) flow and mixing with hypersaline brines with high Br/Cl (>2 ?? 10-3) and low Na/Cl (<0.8) ratios; (2) dissolution of highly soluble salts (e.g., halite, gypsum) in the host sediments resulting in typically lower Br/Cl signal (<2 ?? 10-3); and (3) recharge of anthropogenic effluents, primarily derived from evaporated agricultural return flow that has interacted (e.g., base-exchange reactions) with the overlying soil. It is shown that shallow saline groundwaters influenced by brine mixing exhibit a north-south variation in their Br/Cl and Na/Cl ratios. This chemical trend was observed also in hypersaline brines in the Jordan valley, which suggests a local mixing process between the water bodies. ?? 2007 Elsevier Ltd. All rights reserved.

36 CFR 7.26 - Death Valley National Monument.

Code of Federal Regulations, 2010 CFR

2010-07-01

... 36 Parks, Forests, and Public Property 1 2010-07-01 2010-07-01 false Death Valley National... INTERIOR SPECIAL REGULATIONS, AREAS OF THE NATIONAL PARK SYSTEM § 7.26 Death Valley National Monument. (a) Mining. Mining in Death Valley National Monument is subject to the following regulations, which are...

Total carbon and nitrogen in mineral soil after 26 years of prescribed fire: Long Valley and Fort Valley Experimental Forests

Treesearch

Daniel G. Neary; Sally M. Haase; Steven T. Overby

2008-01-01

Prescribed fire was introduced to high density ponderosa pine stands at Fort Valley and Long Valley Experimental Forests in 1976. This paper reports on mineral soil total carbon (C) and nitrogen (N) at Long Valley. Total soil C and N levels were highly variable and exhibited an increasing, but inconsistent, concentration trend related to burn interval. Total N ranged...

Valley-polarized quantum transport generated by gauge fields in graphene

NASA Astrophysics Data System (ADS)

Settnes, Mikkel; Garcia, Jose H.; Roche, Stephan

2017-09-01

We report on the possibility to simultaneously generate in graphene a bulk valley-polarized dissipative transport and a quantum valley Hall effect by combining strain-induced gauge fields and real magnetic fields. Such unique phenomenon results from a ‘resonance/anti-resonance’ effect driven by the superposition/cancellation of superimposed gauge fields which differently affect time reversal symmetry. The onset of a valley-polarized Hall current concomitant to a dissipative valley-polarized current flow in the opposite valley is revealed by a {{e}2}/h Hall conductivity plateau. We employ efficient linear scaling Kubo transport methods combined with a valley projection scheme to access valley-dependent conductivities and show that the results are robust against disorder.

Carrier transport performance of Cd0.9Zn0.1Te detector by direct current photoconductive technology

NASA Astrophysics Data System (ADS)

Ling, Yunpeng; Min, Jiahua; Liang, Xiaoyan; Zhang, Jijun; Yang, Liuqing; Zhang, Ying; Li, Ming; Liu, Zhaoxin; Wang, Linjun

2017-01-01

In this paper, based on the derivation of the Hecht model and Many model, we establish a new theoretical model and deduce its mathematical equation by considering an even-distributed charged center of certain concentration under constant illumination. This model helps us deeply understand the carrier transport performance of Cd0.9Zn0.1Te (CZT) under various illuminations and non-uniform distribution of the internal electric field in CZT. In our research, direct current photoconductive technology (DCPT) is applied to assess the electrical transport properties of carriers in CZT crystals, which is verified by room temperature Am-241 alpha-particle responses and charge collection efficiency test. The mobility-lifetime product ( μτ ) for carriers is extracted from fitting the Hecht model by DCPT for CZT radiated from the cathode and anode by a constant laser, respectively. Moreover, the carrier transport properties of CZT under various light intensities and during a wide range of temperatures are also taken and analyzed in detail, which enable us to develop the best performance of CZT. In addition, we figure out a method for estimating μeτe and μhτh on different positions of CZT wafer on the basis of the pixel detector that collects single polarity charge, and several corrective actions have improved the accuracy of the measurement.

Groundwater availability of the Central Valley Aquifer, California

USGS Publications Warehouse

Faunt, Claudia C.

2009-01-01

California's Central Valley covers about 20,000 square miles and is one of the most productive agricultural regions in the world. More than 250 different crops are grown in the Central Valley with an estimated value of $17 billion per year. This irrigated agriculture relies heavily on surface-water diversions and groundwater pumpage. Approximately one-sixth of the Nation's irrigated land is in the Central Valley, and about one-fifth of the Nation's groundwater demand is supplied from its aquifers. The Central Valley also is rapidly becoming an important area for California's expanding urban population. Since 1980, the population of the Central Valley has nearly doubled from 2 million to 3.8 million people. The Census Bureau projects that the Central Valley's population will increase to 6 million people by 2020. This surge in population has increased the competition for water resources within the Central Valley and statewide, which likely will be exacerbated by anticipated reductions in deliveries of Colorado River water to southern California. In response to this competition for water, a number of water-related issues have gained prominence: conservation of agricultural land, conjunctive use, artificial recharge, hydrologic implications of land-use change, and effects of climate variability. To provide information to stakeholders addressing these issues, the USGS Groundwater Resources Program made a detailed assessment of groundwater availability of the Central Valley aquifer system, that includes: (1) the present status of groundwater resources; (2) how these resources have changed over time; and (3) tools to assess system responses to stresses from future human uses and climate variability and change. This effort builds on previous investigations, such as the USGS Central Valley Regional Aquifer System and Analysis (CV-RASA) project and several other groundwater studies in the Valley completed by Federal, State and local agencies at differing scales. The

Valley-selective optical Stark effect in monolayer WS2

NASA Astrophysics Data System (ADS)

Gedik, Nuh

Monolayer semiconducting transition-metal dichalcogenides (TMDs) have a pair of valleys that, by time-reversal symmetry, are energetically degenerate. Lifting the valley degeneracy in these materials is of great interest because it would allow for valley specific band engineering and offer additional control in valleytronic applications. In this talk, I will show that circularly polarized light, which breaks time-reversal symmetry, can be used to lift the valley degeneracy by means of the optical Stark effect. We demonstrate that this effect is capable of raising the exciton level in monolayer TMD WS2 by as much as 18 meV in a controllable valley-selective manner. The resulting energy shift is extremely large, comparable to the shift that would be obtained using a very high magnetic field (approximately 100 Tesla). These results offer a novel way to control valley degree of freedom, and may provide a means to realize new valley-selective Floquet topological state of matter.

Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors.

PubMed

Zhang, Fengjiao; Dai, Xiaojuan; Zhu, Weikun; Chung, Hyunjoong; Diao, Ying

2017-07-01

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C 8 -benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This paper further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor-acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Large Modulation of Charge Carrier Mobility in Doped Nanoporous Organic Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Fengjiao; Dai, Xiaojuan; Zhu, Weikun

Molecular doping of organic electronics has shown promise to sensitively modulate important device metrics. One critical challenge is the disruption of structure order upon doping of highly crystalline organic semiconductors, which significantly reduces the charge carrier mobility. This paper demonstrates a new method to achieve large modulation of charge carrier mobility via channel doping without disrupting the molecular ordering. Central to the method is the introduction of nanopores into the organic semiconductor thin films via a simple and robust templated meniscus-guided coating method. Using this method, the charge carrier mobility of C8-benzothieno[3,2-b]benzothiophene transistors is boosted by almost sevenfold. This papermore » further demonstrates enhanced electron transport by close to an order of magnitude in a diketopyrrolopyrrole-based donor–acceptor polymer. Combining spectroscopic measurements, density functional theory calculations, and electrical characterizations, the doping mechanism is identified as partial-charge-transfer induced trap filling. The nanopores serve to enhance the dopant/organic semiconductor charge transfer reaction by exposing the π-electrons to the pore wall.« less

Hot-carrier degradation in deep-submicrometer nMOSFETs: lightly doped drain vs. large angle tilt implanted drain

NASA Astrophysics Data System (ADS)

Rafí, J. M.; Campabadal, F.

2001-08-01

The hot-carrier degradation of lightly doped drain (LDD) and large angle tilt implanted drain (LATID) nMOSFETs of a 0.35 μm CMOS technology is analysed and compared by means of I-V characterisation and charge pumping current measurements. LATID nMOSFETs are found to exhibit a significant improvement in terms of both, current drivability and hot-carrier immunity at maximum substrate current condition. The different factors which can be responsible for this improved hot-carrier resistance are investigated. It is shown that this must be attributed to a reduction of the maximum lateral electric field along the channel, but not to a minor generation of physical damage for a given electric field or to a reduced I-V susceptibility to a given amount of generated damage. Further to this analysis, the hot-carrier degradation comparison between LDD and LATID devices is extended to the whole range of gate-stress regimes and the effects of short electron injection (SEI) and short hole injection (SHI) phases on hot-carrier-stressed devices are analysed. Apart from a significant improved resistance to hot-carrier effects registered for LATID devices, a similar behaviour is observed for the two types of architectures. In this way, SEI phases are found to be an efficient tool for revealing part of the damage generated in stresses at low gate voltages, whereas the performance of a first SHI phase after stress at high gate bias is found to result in a significant additional degradation of the devices. This enhanced degradation is attributed to a sudden interface states build-up occurring in both, LDD and LATID devices, near the Si/spacer interface only under the first hot-hole injection condition.

Groundwater sapping valleys: Experimental studies, geological controls and implications to the interpretation of valley networks on Mars

NASA Technical Reports Server (NTRS)

Kochel, R. Craig

1988-01-01

An integrated approach using experimental laboratory models, field studies of terrestrial analogs, and remote studies of terrestrial field sites were applied to the goals of understanding the nature and morphology of valley networks formed by groundwater sapping. In spite of problems with scaling, the experimental studies provide valuable insights into concepts relating to the initiation, development, and evolution of valleys by groundwater sapping. These investigations are also aimed at developing geomorphic criteria for distinguishing valleys formed by surface runoff from those formed by groundwater sapping processes. Channels that were field classified as sapping vs. runoff were successfully distinguished using statistical analysis of their respective morphologies; therefore, it may be possible to use similar techniques to interpret channel genesis on Mars. The terrestrial and flume studies provide the ground truth dataset which can be used (and will be during the present year) to help interpret the genesis of valley networks on Mars.

The dynamics of current carriers in standing Alfvén waves: Parallel electric fields in the auroral acceleration region

NASA Astrophysics Data System (ADS)

Wright, Andrew N.; Allan, W.; Ruderman, Michael S.; Elphic, R. C.

2002-07-01

The acceleration of current carriers in an Alfvén wave current system is considered. The model incorporates a dipole magnetic field geometry, and we present an analytical solution of the two-fluid equations by successive approximations. The leading solution corresponds to the familiar single-fluid toroidal oscillations. The next order describes the nonlinear dynamics of electrons responsible for carrying a few μAm-2 field aligned current into the ionosphere. The solution shows how most of the electron acceleration in the magnetosphere occurs within 1 RE of the ionosphere, and that a parallel electric field of the order of 1 mVm-1 is responsible for energising the electrons to 1 keV. The limitations of the electron fluid approximation are considered, and a qualitative solution including electron beams and a modified E∥ is developed in accord with observations. We find that the electron acceleration can be nonlinear, (ve∥∇∥)ve∥ > ωve∥, as a result of our nonuniform equilibrium field geometry even when ve∥ is less than the Alfvén speed. Our calculation also elucidates the processes through which E∥ is generated and supported.

Hydrologic effects of stress-relief fracturing in an Appalachian Valley

USGS Publications Warehouse

Wyrick, Granville G.; Borchers, James W.

1981-01-01

A hydrologic study at Twin Falls State Park, Wyoming County, West Virginia, was made to determine how fracture systems affect the occurrence and movement of ground water in a typical valley of the Appalachian Plateaus Physiographic Province. Twin Falls was selected because it is generally unaffected by factors that would complicate an analysis of the data. The study area was the Black Fork Valley at Twin Falls. The valley is about 3 miles long and 400 to 600 feet wide and is cut into massive sandstone units interbedded with thin coal and shale beds. The study was made to determine how aquifer characteristics were related to fracture systems in this valley, so that the relation could be applied to studies of other valleys. Two sites were selected for test drilling, pumping tests, and geophysical studies. One site is in the upper part of the valley, and the second is near the lower central part. At both sites, ground water occurs mainly in horizontal bedding-plane fractures under the valley floor and in nearly vertical and horizontal slump fractures along the valley wall. The aquifer is under confined conditions under the valley floor and unconfined conditions along the valley wall. The fractures pinch out under the valley walls, which form impermeable barriers. Tests of wells near the valley center indicated a change in storage coefficient as the cone of depression caused by pumping reached the confined-unconfined boundaries; the tests also indicated barrier-image effects when the cone reached the impermeable boundaries. Drawdown from pumping near the center of the valley affected water levels at both sites, indicating a hydraulic connection from the upper to the lower end of the valley. Stream gain-and-loss studies show that ground water discharges to the stream from horizontal fractures beneath Black Fork Falls, near the mouth of Black Fork. The fracture systems that constitute most of the transmissive part of the aquifer at Twin Falls are like those described as

Groundwater quality in the Santa Clara River Valley, California

USGS Publications Warehouse

Burton, Carmen A.; Landon, Matthew K.; Belitz, Kenneth

2011-01-01

The Santa Clara River Valley (SCRV) study unit is located in Los Angeles and Ventura Counties, California, and is bounded by the Santa Monica, San Gabriel, Topatopa, and Santa Ynez Mountains, and the Pacific Ocean. The 460-square-mile study unit includes eight groundwater basins: Ojai Valley, Upper Ojai Valley, Ventura River Valley, Santa Clara River Valley, Pleasant Valley, Arroyo Santa Rosa Valley, Las Posas Valley, and Simi Valley (California Department of Water Resources, 2003; Montrella and Belitz, 2009). The SCRV study unit has hot, dry summers and cool, moist winters. Average annual rainfall ranges from 12 to 28 inches. The study unit is drained by the Ventura and Santa Clara Rivers, and Calleguas Creek. The primary aquifer system in the Ventura River Valley, Ojai Valley, Upper Ojai Valley, and Simi Valley basins is largely unconfined alluvium. The primary aquifer system in the remaining groundwater basins mainly consists of unconfined sands and gravels in the upper portion and partially confined marine and nonmarine deposits in the lower portion. The primary aquifer system in the SCRV study unit is defined as those parts of the aquifers corresponding to the perforated intervals of wells listed in the California Department of Public Health (CDPH) database. Public-supply wells typically are completed in the primary aquifer system to depths of 200 to 1,100 feet below land surface (bls). The wells contain solid casing reaching from the land surface to a depth of about 60-700 feet, and are perforated below the solid casing to allow water into the well. Water quality in the primary aquifer system may differ from the water in the shallower and deeper parts of the aquifer. Land use in the study unit is approximately 40 percent (%) natural (primarily shrubs, grassland, and wetlands), 37% agricultural, and 23% urban. The primary crops are citrus, avocados, alfalfa, pasture, strawberries, and dry beans. The largest urban areas in the study unit are the cities of

California's restless giant: the Long Valley Caldera

USGS Publications Warehouse

Hill, David P.; Bailey, Roy A.; Hendley, James W.; Stauffer, Peter H.; Marcaida, Mae

2014-01-01

Scientists have monitored geologic unrest in the Long Valley, California, area since 1980. In that year, following a swarm of strong earthquakes, they discovered that the central part of the Long Valley Caldera had begun actively rising. Unrest in the area persists today. The U.S. Geological Survey (USGS) continues to provide the public and civil authorities with current information on the volcanic hazard at Long Valley and is prepared to give timely warnings of any impending eruption.

Transport-reaction model for defect and carrier behavior within displacement cascades in gallium arsenide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wampler, William R.; Myers, Samuel M.

2014-02-01

A model is presented for recombination of charge carriers at displacement damage in gallium arsenide, which includes clustering of the defects in atomic displacement cascades produced by neutron or ion irradiation. The carrier recombination model is based on an atomistic description of capture and emission of carriers by the defects with time evolution resulting from the migration and reaction of the defects. The physics and equations on which the model is based are presented, along with details of the numerical methods used for their solution. The model uses a continuum description of diffusion, field-drift and reaction of carriers and defectsmore » within a representative spherically symmetric cluster. The initial radial defect profiles within the cluster were chosen through pair-correlation-function analysis of the spatial distribution of defects obtained from the binary-collision code MARLOWE, using recoil energies for fission neutrons. Charging of the defects can produce high electric fields within the cluster which may influence transport and reaction of carriers and defects, and which may enhance carrier recombination through band-to-trap tunneling. Properties of the defects are discussed and values for their parameters are given, many of which were obtained from density functional theory. The model provides a basis for predicting the transient response of III-V heterojunction bipolar transistors to pulsed neutron irradiation.« less

Geology of the Greenwater Range, and the dawn of Death Valley, California—Field guide for the Death Valley Natural History Conference, 2013

USGS Publications Warehouse

Calzia, J.P.; Rämö, O.T.; Jachens, Robert; Smith, Eugene; Knott, Jeffrey

2016-05-02

Much has been written about the age and formation of Death Valley, but that is one—if not the last—chapter in the fascinating geologic history of this area. Igneous and sedimentary rocks in the Greenwater Range, one mountain range east of Death Valley, tell an earlier story that overlaps with the formation of Death Valley proper. This early story has been told by scientists who have studied these rocks for many years and continue to do so. This field guide was prepared for the first Death Valley Natural History Conference and provides an overview of the geology of the Greenwater Range and the early history (10–0 Ma) of Death Valley.

27 CFR 9.191 - Ramona Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Ramona Valley. 9.191 Section 9.191 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT...) Borrego Valley, California, 1982 edition; and (2) El Cajon, California, 1979 edition. (c) Boundary. The...

27 CFR 9.191 - Ramona Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Ramona Valley. 9.191 Section 9.191 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT...) Borrego Valley, California, 1982 edition; and (2) El Cajon, California, 1979 edition. (c) Boundary. The...

A Quantitative Analysis of the Fretted Terrain Valleys, Arabia Terra, Mars

NASA Astrophysics Data System (ADS)

Mason, Kelsey Anne

Fretted terrain describes regions on Mars with low-lying, flat valleys separated by steep cliffs that often form polygonal-shaped mesas. The fretted terrain valleys have a morphology distinct from other valleys found on Mars, and their unknown origin may hold insights into critical questions about Mars' tectonic, magmatic, and hydrologic history. Current hypothesis for the formation of the fretted terrain include fracturing as well as hydrological flow processes such as fluvial or glacial erosion. The region for this study is located in eastern Arabia Terra and is the type-location for fretted terrain. By qualitatively and quantitatively documenting the planform, or map-view, valley geometries and orientations throughout the fretted terrain, this study better constrains the origin of the valleys. Valleys were mapped using automated routines in ArcGIS including the D8 flow direction algorithm. Valleys were then grouped geographically into basins and also by Strahler order. The valleys were then segmented every 50 km and the azimuth of each segment was calculated. The resulting valley azimuths were analyzed using rose diagrams to quantitatively describe the planform geometries of the valleys. Qualitatively, the majority of basins were found to have rectangular valley geometries. The downslope direction was calculated for each basin, and it was compared to the corresponding valley azimuths. The basins with rectangular valley geometries had valleys with an azimuth mode nearly parallel to the downslope direction and another azimuth mode perpendicular to the downslope direction. The valley azimuth mode parallel to the downslope direction is attributed to hydrological flow processes while the mode perpendicular to the downslope direction is attributed to fracturing related to the formation or existence of the Mars global dichotomy boundary.

Acoustic manipulation of active spherical carriers: Generation of negative radiation force

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rajabi, Majid, E-mail: majid_rajabi@iust.ac.ir; Mojahed, Alireza

2016-09-15

This paper examines theoretically a novel mechanism of generating negative (pulling) radiation force for acoustic manipulation of spherical carriers equipped with piezoelectric actuators in its inner surface. In this mechanism, the spherical particle is handled by common plane progressive monochromatic acoustic waves instead of zero-/higher- order Bessel beams or standing waves field. The handling strategy is based on applying a spatially uniform harmonic electrical voltage at the piezoelectric actuator with the same frequency of handling acoustic waves, in order to change the radiation force effect from repulsive (away from source) to attractive (toward source). This study may be considered asmore » a start point for development of contact-free precise handling and entrapment technology of active carriers which are essential in many engineering and medicine applications.« less

Rashba effect and enriched spin-valley coupling in Ga X /M X2 (M = Mo, W; X = S, Se, Te) heterostructures

NASA Astrophysics Data System (ADS)

Zhang, Qingyun; Schwingenschlögl, Udo

2018-04-01

Using first-principles calculations, we investigate the electronic properties of the two-dimensional Ga X /MX 2 (M = Mo, W; X = S, Se, Te) heterostructures. Orbital hybridization between Ga X and MX 2 is found to result in Rashba splitting at the valence-band edge around the Γ point, which grows for increasing strength of the spin-orbit coupling in the p orbitals of the chalcogenide atoms. The location of the valence-band maximum in the Brillouin zone can be tuned by strain and application of an out-of-plane electric field. The coexistence of Rashba splitting (in-plane spin direction) and band splitting at the K and K' valleys (out-of-plane spin direction) makes Ga X /MX 2 heterostructures interesting for spintronics and valleytronics. They are promising candidates for two-dimensional spin-field-effect transistors and spin-valley Hall effect devices. Our findings shed light on the spin-valley coupling in van der Waals heterostructures.

Both hemophilia health care providers and hemophilia a carriers report that carriers have excessive bleeding.

PubMed

Paroskie, Allison; Oso, Olatunde; Almassi, Benjamin; DeBaun, Michael R; Sidonio, Robert F

2014-05-01

Hemophilia A, the result of reduced factor VIII activity, is an X-linked recessive bleeding disorder. Previous reports of hemophilia A carriers suggest an increased bleeding tendency. Our objective was to determine the attitudes and understanding of the hemophilia A carrier bleeding phenotype, and opinions regarding timing of carrier testing from the perspective of both medical providers and affected patients. Data from this survey were used as preliminary data for an ongoing prospective study. An electronic survey was distributed to physicians and nurses employed at Hemophilia Treatment Centers, and hemophilia A carriers who were members of Hemophilia Federation of America. The questions focused on the clinical understanding of bleeding symptoms and management of hemophilia A carriers, and the timing and intensity of carrier testing. Our survey indicates that 51% (36/51) of providers compared with 78% (36/46) of carriers believe that hemophilia A carriers with normal factor VIII activity have an increased bleeding tendency (P<0.001); 72% (33/36) of hemophilia A carriers report a high frequency of bleeding symptoms. Regarding carrier testing, 72% (50/69) of medical providers recommend testing after 14 years of age, conversely 65% (29/45) of hemophilia A carriers prefer testing to be done before this age (P<0.001). Hemophilia A carriers self-report a higher frequency of bleeding than previously acknowledged, and have a preference for earlier testing to confirm carrier status.

Spectroscopy of Charge Carriers and Traps in Field-Doped Single Crystal Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Xiaoyang

2014-12-10

The proposed research aims to achieve quantitative, molecular level understanding of charge carriers and traps in field-doped crystalline organic semiconductors via in situ linear and nonlinear optical spectroscopy, in conjunction with transport measurements and molecular/crystal engineering. Organic semiconductors are emerging as viable materials for low-cost electronics and optoelectronics, such as organic photovoltaics (OPV), organic field effect transistors (OFETs), and organic light emitting diodes (OLEDs). Despite extensive studies spanning many decades, a clear understanding of the nature of charge carriers in organic semiconductors is still lacking. It is generally appreciated that polaron formation and charge carrier trapping are two hallmarks associatedmore » with electrical transport in organic semiconductors; the former results from the low dielectric constants and weak intermolecular electronic overlap while the latter can be attributed to the prevalence of structural disorder. These properties have lead to the common observation of low charge carrier mobilities, e.g., in the range of 10-5 - 10-3 cm2/Vs, particularly at low carrier concentrations. However, there is also growing evidence that charge carrier mobility approaching those of inorganic semiconductors and metals can exist in some crystalline organic semiconductors, such as pentacene, tetracene and rubrene. A particularly striking example is single crystal rubrene (Figure 1), in which hole mobilities well above 10 cm2/Vs have been observed in OFETs operating at room temperature. Temperature dependent transport and spectroscopic measurements both revealed evidence of free carriers in rubrene. Outstanding questions are: what are the structural features and physical properties that make rubrene so unique? How do we establish fundamental design principles for the development of other organic semiconductors of high mobility? These questions are critically important but not comprehensive, as the

Scaling relationships and concavity of small valley networks on Mars

NASA Astrophysics Data System (ADS)

Penido, Julita C.; Fassett, Caleb I.; Som, Sanjoy M.

2013-01-01

Valley networks are widely interpreted as the preserved erosional record of water flowing across the martian surface. The manner in which valley morphometric properties scale with drainage area has been widely examined on Earth. Earlier studies assessing these properties on Mars have suggested that martian valleys are morphometrically distinct from those on Earth. However, these earlier measurements were generally made on large valley systems because of the limited topographic data available. In this study, we determine the scaling properties of valley networks at smaller scales than have been previously assessed, using digital elevation models from the High Resolution Stereo Camera (HRSC). We find a Hack's law exponent of 0.74, larger than on Earth, and our measurements also reveal that individual small valleys have concave up, concave down, and quasi-linear longitudinal profiles, consistent with earlier studies of dissected terrain on Mars. However, for many valleys, widths are observed to increase downstream similarly to how they scale in terrestrial channels. The similarities and differences between valley networks on Mars and Earth are consistent with the idea that valleys on Mars are comparatively immature, and precipitation was a likely mechanism for delivering water to these networks.

Carrier Density Modulation in Ge Heterostructure by Ferroelectric Switching

DOE PAGES

Ponath, Patrick; Fredrickson, Kurt; Posadas, Agham B.; ...

2015-01-14

The development of nonvolatile logic through direct coupling of spontaneous ferroelectric polarization with semiconductor charge carriers is nontrivial, with many issues, including epitaxial ferroelectric growth, demonstration of ferroelectric switching, and measurable semiconductor modulation. Here we report a true ferroelectric field effect carrier density modulation in an underlying Ge(001) substrate by switching of the ferroelectric polarization in the epitaxial c-axis-oriented BaTiO3 (BTO) grown by molecular beam epitaxy (MBE) on Ge. Using density functional theory, we demonstrate that switching of BTO polarization results in a large electric potential change in Ge. Aberration-corrected electron microscopy confirms the interface sharpness, and BTO tetragonality. Electron-energy-lossmore » spectroscopy (EELS) indicates the absence of any low permittivity interlayer at the interface with Ge. Using piezoelectric force microscopy (PFM), we confirm the presence of fully switchable, stable ferroelectric polarization in BTO that appears to be single domain. Using microwave impedance microscopy (MIM), we clearly demonstrate a ferroelectric field effect.« less

One- and two-dimensional dopant/carrier profiling for ULSI

NASA Astrophysics Data System (ADS)

Vandervorst, W.; Clarysse, T.; De Wolf, P.; Trenkler, T.; Hantschel, T.; Stephenson, R.; Janssens, T.

1998-11-01

Dopant/carrier profiles constitute the basis of the operation of a semiconductor device and thus play a decisive role in the performance of a transistor and are subjected to the same scaling laws as the other constituents of a modern semiconductor device and continuously evolve towards shallower and more complex configurations. This evolution has increased the demands on the profiling techniques in particular in terms of resolution and quantification such that a constant reevaluation and improvement of the tools is required. As no single technique provides all the necessary information (dopant distribution, electrical activation,..) with the requested spatial and depth resolution, the present paper attempts to provide an assessment of those tools which can be considered as the main metrology technologies for ULSI-applications. For 1D-dopant profiling secondary ion mass spectrometry (SIMS) has progressed towards a generally accepted tool meeting the requirements. For 1D-carrier profiling spreading resistance profiling and microwave surface impedance profiling are envisaged as the best choices but extra developments are required to promote them to routinely applicable methods. As no main metrology tool exist for 2D-dopant profiling, main emphasis is on 2D-carrier profiling tools based on scanning probe microscopy. Scanning spreading resistance (SSRM) and scanning capacitance microscopy (SCM) are the preferred methods although neither of them already meets all the requirements. Complementary information can be extracted from Nanopotentiometry which samples the device operation in more detail. Concurrent use of carrier profiling tools, Nanopotentiometry, analysis of device characteristics and simulations is required to provide a complete characterization of deep submicron devices.

27 CFR 9.100 - Mesilla Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Mesilla Valley. 9.100 Section 9.100 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT... Mesilla Valley viticultural area is located within Dona Ana County, New Mexico, and El Paso County, Texas...

27 CFR 9.100 - Mesilla Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Mesilla Valley. 9.100 Section 9.100 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT... Mesilla Valley viticultural area is located within Dona Ana County, New Mexico, and El Paso County, Texas...

Theoretical investigation of carrier transfer by an optical contacting scheme for optoelectronic application

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Jianfeng, E-mail: jianfeng.yang@student.unsw.edu.au; Zhang, Zhilong; Chen, Weijian

2016-04-21

As a promising charge carrier transfer scheme, optical coupling could potentially improve the performance of an optoelectronic device for energy harvesting based on well developed nanotechnology. By extracting carriers optically, the functional features of the nano-structured material could be better used by minimizing the concerns about its electrical properties. In this paper, we present a rigorous electromagnetic model to analyze the optical carrier transfer problem. The flow of the energy is analyzed carefully by the photon transfer spectrum, and the photon emitters (electron-hole pairs) are assumed in a thermal equilibrium described by Bose-Einstein distribution. The result shows that an energymore » selective carrier transfer can be optically achieved at the device level by integrating the emitter and receiver into a nano-optical resonator, where both the photon emission and absorption are significantly amplified by a near-field coupling around the resonant frequency. General design and optimization schemes in practice are addressed by examining the influence of the photonic design and an energy dependent emissivity of the emitter, which can be used to develop the optical contacting concept further.« less

27 CFR 9.78 - Ohio River Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... Valley.” (b) Approved maps. The approved maps for determining the boundary of the Ohio River Valley... boundary proceeds in a straight line westerly to the town of Dry Ridge in Grant County, Kentucky...

Numerical Simulation of Nocturnal Drainage Flows in Idealized Valley-Tributary Systems.

NASA Astrophysics Data System (ADS)

O'Steen, Lance B.

2000-11-01

Numerical simulations of nocturnal drainage flow and transport in idealized valley-tributary systems are compared with the Atmospheric Science in Complex Terrain (ASCOT) meteorological field data and tracer studies from the Brush Creek valley of western Colorado. Much of the general valley-tributary flow behavior deduced from observations is qualitatively reproduced in the numerical results. The spatially complex, unsteady nature of the tributary flow found in the field data is also seen in the simulations. Oscillations in the simulated tributary flow are similar to some field observations. However, observed oscillations in the valley flow at the mouth of the tributary could not be reproduced in the numerical results. Thus, hypotheses of strongly coupled valley-tributary flow oscillations, based on field data, cannot be supported by these simulations. Along-valley mass flux calculations based on model results for the valley-tributary system indicate an increase of 5%-10% over a valley without a tributary. Enhanced valley mass fluxes were found from 8 km above the tributary to almost the valley mouth. However, the valley mass fluxes for topography with and without a tributary were nearly equal at the valley outflow. ASCOT field data suggested a tributary mass flow contribution of 5%-15% for a Brush Creek tributary of similar drainage area to the model tributary employed here. Numerical simulations of transport in the nocturnal valley-tributary flow strongly support ASCOT tracer studies in the Pack Canyon tributary of Brush Creek. These results suggest that the valley-tributary interaction can significantly increase plume dispersion under stable conditions. Overall, the simulation results presented here indicate that simple terrain geometries are able to capture many of the salient features of drainage flow in real valley-tributary systems.

Photogenerated Intrinsic Free Carriers in Small-molecule Organic Semiconductors Visualized by Ultrafast Spectroscopy

PubMed Central

He, Xiaochuan; Zhu, Gangbei; Yang, Jianbing; Chang, Hao; Meng, Qingyu; Zhao, Hongwu; Zhou, Xin; Yue, Shuai; Wang, Zhuan; Shi, Jinan; Gu, Lin; Yan, Donghang; Weng, Yuxiang

2015-01-01

Confirmation of direct photogeneration of intrinsic delocalized free carriers in small-molecule organic semiconductors has been a long-sought but unsolved issue, which is of fundamental significance to its application in photo-electric devices. Although the excitonic description of photoexcitation in these materials has been widely accepted, this concept is challenged by recently reported phenomena. Here we report observation of direct delocalized free carrier generation upon interband photoexcitation in highly crystalline zinc phthalocyanine films prepared by the weak epitaxy growth method using ultrafast spectroscopy. Transient absorption spectra spanning the visible to mid-infrared region revealed the existence of short-lived free electrons and holes with a diffusion length estimated to cross at least 11 molecules along the π−π stacking direction that subsequently localize to form charge transfer excitons. The interband transition was evidenced by ultraviolet-visible absorption, photoluminescence and electroluminescence spectroscopy. Our results suggest that delocalized free carriers photogeneration can also be achieved in organic semiconductors when the molecules are packed properly. PMID:26611323

The Valley Networks on Mars

NASA Astrophysics Data System (ADS)

Gulick, V. C.

2002-12-01

Despite three decades of exploration, the valley networks on Mars still seem to raise more questions than they answer. Valley systems have formed in the southern highlands, along some regions of the dichotomy boundary and the south rim of Valles Marineris, around the rim of some impact craters, and on the flanks of some volcanoes. They are found on some of the oldest and youngest terrains as well as on intermediate aged surfaces. There is surprisingly little consensus as to the formation and the paleoclimatic implications of the valley networks. Did the valleys require a persistent solar-driven atmospheric hydrological cycle involving precipitation, surface runoff, infiltration and groundwater outflow as they typically do on Earth? Or are they the result of magmatic or impact-driven thermal cycling of ground water involving persistent outflow and subsequent runoff? Are they the result of some other process(es)? Ground-water sapping, surface-water runoff, debris flows, wind erosion, and formation mechanisms involving other fluids have been proposed. Until such basic questions as these are definitively answered, their significance for understanding paleoclimatic change on Mars remains cloudy. I will review what is known about valley networks using data from both past and current missions. I will discuss what we have learned about their morphology, environments in which they formed, their spatial and temporal associations, possible formation mechanisms, relation to outflow channel and gully formation, as well as the possible implications for past climate change on Mars. Finally I will discuss how future, meter to submeter scale imaging and other remote sensing observations may shed new light on the debate over the origin of these enigmatic features.

Death Valley California as seen from STS-59

NASA Technical Reports Server (NTRS)

1994-01-01

This oblique handheld Hasselblad 70mm photo shows Death Valley, near California's border with Nevada. The valley -- the central feature of Death Valley National Monument -- extends north to south for some 140 miles (225 kilometers). Hemmed in to the east by the Amargosa Range and to the west by the Panamints, its width varies from 5 to 15 miles (8 to 24 kilometers).

Both Hemophilia Health Care Providers and Hemophilia A Carriers Report that Carriers have Excessive Bleeding

PubMed Central

Paroskie, Allison; Oso, Olatunde; DeBaun, Michael R.; Sidonio, Robert F

2014-01-01

Introduction Hemophilia A, the result of reduced factor VIII (FVIII) activity, is an X-linked recessive bleeding disorder. Previous reports of Hemophilia A carriers suggest an increased bleeding tendency. Our objective was to determine the attitudes and understanding of the Hemophilia A carrier bleeding phenotype, and opinions regarding timing of carrier testing from the perspective of both medical providers and affected patients. Data from this survey was used as preliminary data for an ongoing prospective study. Material and Methods An electronic survey was distributed to physicians and nurses employed at Hemophilia Treatment Centers (HTC), and Hemophilia A carriers who were members of Hemophilia Federation of America. Questions focused on the clinical understanding of bleeding symptoms and management of Hemophilia A carriers, and the timing and intensity of carrier testing. Results Our survey indicates that 51% (36/51) of providers compared to 78% (36/46) of carriers believe that Hemophilia A carriers with normal FVIII activity have an increased bleeding tendency (p<0.001); 72% (33/36) of Hemophilia A carriers report a high frequency of bleeding symptoms. Regarding carrier testing, 72% (50/69) of medical providers recommend testing after 14 years of age, conversely 65% (29/45) of Hemophilia A carriers prefer testing to be done prior to this age (p<0.001). Discussion Hemophilia A carriers self-report a higher frequency of bleeding than previously acknowledged, and have a preference for earlier testing to confirm carrier status. PMID:24309601

A hydrogen energy carrier. Volume 2: Systems analysis

NASA Technical Reports Server (NTRS)

Savage, R. L. (Editor); Blank, L. (Editor); Cady, T. (Editor); Cox, K. (Editor); Murray, R. (Editor); Williams, R. D. (Editor)

1973-01-01

A systems analysis of hydrogen as an energy carrier in the United States indicated that it is feasible to use hydrogen in all energy use areas, except some types of transportation. These use areas are industrial, residential and commercial, and electric power generation. Saturation concept and conservation concept forecasts of future total energy demands were made. Projected costs of producing hydrogen from coal or from nuclear heat combined with thermochemical decomposition of water are in the range $1.00 to $1.50 per million Btu of hydrogen produced. Other methods are estimated to be more costly. The use of hydrogen as a fuel will require the development of large-scale transmission and storage systems. A pipeline system similar to the existing natural gas pipeline system appears practical, if design factors are included to avoid hydrogen environment embrittlement of pipeline metals. Conclusions from the examination of the safety, legal, environmental, economic, political and societal aspects of hydrogen fuel are that a hydrogen energy carrier system would be compatible with American values and the existing energy system.

Spectroscopic evidence of photogenerated carrier separation by built-in electric field in Sb-doped n-BaSi2/B-doped p-BaSi2 homojunction diodes

NASA Astrophysics Data System (ADS)

Kodama, Komomo; Takabe, Ryota; Deng, Tianguo; Toko, Kaoru; Suemasu, Takashi

2018-05-01

The operation of a BaSi2 homojunction solar cell is first demonstrated. In n+-BaSi2 (20 nm)/p-BaSi2 (500 nm)/p+-BaSi2 (50 nm) homojunction diodes on p+-Si(111) (resistivity ρ < 0.01 Ω cm), the internal quantum efficiency (IQE) under AM1.5 illumination becomes pronounced at wavelengths λ < 800 nm and exceeded 30% at λ = 500 nm. In contrast, the IQE values are small at λ < 600 nm in n+-BaSi2 (300 nm)/p-Si (ρ > 0.1 Ω cm) heterojunction diodes, but are high in the range between 600 and 1200 nm. The difference in spectral response demonstrates the photogenerated carrier separation by the built-in electric field in the homojunction diode.

Cuyahoga Valley National Park : comprehensive rail study

DOT National Transportation Integrated Search

2013-07-25

Cuyahoga Valley Scenic Railroad (CVSR) has been operating in partnership with Cuyahoga Valley National Park (CVNP) since 1989 under a cooperative agreement. The railroad has been successfully developing and expanding services and ridership for the pa...

Audiomagnetotelluric data from Spring, Cave, and Coyote Spring Valleys, Nevada

USGS Publications Warehouse

McPhee, Darcy K.; Chuchel, Bruce A.; Pellerin, Louise

2006-01-01

Audiomagnetotelluric (AMT) data along four profiles in Spring, Cave, and Coyote Spring Valleys are presented here. The AMT method is used to estimate the electrical resistivity of the earth over depth ranges of a few meters to greater than one kilometer. This method is a valuable tool for revealing subsurface structure and stratigraphy within the Basin and Range of eastern Nevada, therefore helping to define the geohydrologic framework in this region. We collected AMT data using the Geometrics StrataGem EH4 system, a four-channel, natural and controlled- source tensor system recording in the range of 10 to 92,000 Hz. To augment the low signal in the natural field, an unpolarized transmitter comprised of two horizontal-magnetic dipoles was used from 1,000 to 70,000 Hz. Profiles were 1.4 - 12.6 km in length with station spacing of 100-400 m. Data were recorded with the electrical (E) field parallel to and perpendicular to the regional geologic strike direction. Station locations and sounding curves, showing apparent resistivity, phase data, and coherency data, are presented here.

Valley photonic crystals for control of spin and topology.

PubMed

Dong, Jian-Wen; Chen, Xiao-Dong; Zhu, Hanyu; Wang, Yuan; Zhang, Xiang

2017-03-01

Photonic crystals offer unprecedented opportunity for light manipulation and applications in optical communication and sensing. Exploration of topology in photonic crystals and metamaterials with non-zero gauge field has inspired a number of intriguing optical phenomena such as one-way transport and Weyl points. Recently, a new degree of freedom, valley, has been demonstrated in two-dimensional materials. Here, we propose a concept of valley photonic crystals with electromagnetic duality symmetry but broken inversion symmetry. We observe photonic valley Hall effect originating from valley-dependent spin-split bulk bands, even in topologically trivial photonic crystals. Valley-spin locking behaviour results in selective net spin flow inside bulk valley photonic crystals. We also show the independent control of valley and topology in a single system that has been long pursued in electronic systems, resulting in topologically-protected flat edge states. Valley photonic crystals not only offer a route towards the observation of non-trivial states, but also open the way for device applications in integrated photonics and information processing using spin-dependent transportation.

Improved electrical properties of n-type SiGe alloys

NASA Technical Reports Server (NTRS)

Scoville, A. N.; Bajgar, Clara; Vandersande, Jan; Fleurial, Jean-Pierre

1992-01-01

The effect of changes in the carrier concentration and mobility for heavily doped n-type SiGe on the electrical power factor has been investigated. It has been shown that power factors of 37-40 microV/cm-K-squared can be achieved with carrier concentrations of 2.0 - 2.5 x 10 exp 20/cu cm and mobilities of 38-40 sq cm/V-sec. Many samples with suitable carrier concentration do not have high mobilities and some rationale for this behavior is presented. Initial results are presented on fabrication of n-type samples from ultrafine powders. The emphasis in this work is to achieve thermal conductivity reductions by adding inert particles to scatter midfrequency phonons.

Measurement of Relaxation Time of Excess Carriers in Si and CIGS Solar Cells by Modulated Electroluminescence Technique

DOE Office of Scientific and Technical Information (OSTI.GOV)

Khatavkar, Sanchit; Muniappan, Kulasekaran; Kannan, Chinna V.

Excess carrier lifetime plays a crucial role in determining the efficiency of solar cells. In this paper, we use the frequency dependence of inphase and quadrature components of modulated electroluminescence (MEL) to measure the relaxation time (decay) of excess carriers. The advantage of the MEL technique is that the relaxation time is obtained directly from the angular frequency at which the quadrature component peaks. It does not need knowledge of the material parameters like mobility, etc., and can be used for any finished solar cells which have detectable light emission. The experiment is easy to perform with standard electrical equipment.more » For silicon solar cells, the relaxation time is dominated by recombination and hence, the relaxation time is indeed the excess carrier lifetime. In contrast, for the CIGS solar cells investigated here, the relaxation time is dominated by trapping and emission from shallow minority carrier traps.« less

Measurement of Relaxation Time of Excess Carriers in Si and CIGS Solar Cells by Modulated Electroluminescence Technique

DOE PAGES

Khatavkar, Sanchit; Muniappan, Kulasekaran; Kannan, Chinna V.; ...

2017-11-10

Excess carrier lifetime plays a crucial role in determining the efficiency of solar cells. In this paper, we use the frequency dependence of inphase and quadrature components of modulated electroluminescence (MEL) to measure the relaxation time (decay) of excess carriers. The advantage of the MEL technique is that the relaxation time is obtained directly from the angular frequency at which the quadrature component peaks. It does not need knowledge of the material parameters like mobility, etc., and can be used for any finished solar cells which have detectable light emission. The experiment is easy to perform with standard electrical equipment.more » For silicon solar cells, the relaxation time is dominated by recombination and hence, the relaxation time is indeed the excess carrier lifetime. In contrast, for the CIGS solar cells investigated here, the relaxation time is dominated by trapping and emission from shallow minority carrier traps.« less

INTERNATIONAL CONFERENCE ON SEMICONDUCTOR INJECTION LASERS SELCO-87: High-frequency impedance and spontaneous carrier lifetime in narrow-stripe semiconductor injection lasers

NASA Astrophysics Data System (ADS)

Hoernlein, W.

1988-11-01

Measurements were made of the complex reflection coefficient of hf (10-400 MHz) signals from semiconductor injection lasers supplied with a direct bias current ranging from several milliamperes up to the threshold value or higher. The hf impedance was calculated. The parameters of the equivalent electrical circuit made it possible to predict the modulation characteristics. The impedance corresponding to currents below the lasing threshold was used to find the differential carrier lifetime from the RC constant of the p-n junction of a laser diode. A description of the apparatus is supplemented by an account of the method used in calculation of the electrical parameters and carrier lifetimes. The first results obtained using this apparatus and method are reported.

Scaling relations for large Martian valleys

NASA Astrophysics Data System (ADS)

Som, Sanjoy M.; Montgomery, David R.; Greenberg, Harvey M.

2009-02-01

The dendritic morphology of Martian valley networks, particularly in the Noachian highlands, has long been argued to imply a warmer, wetter early Martian climate, but the character and extent of this period remains controversial. We analyzed scaling relations for the 10 large valley systems incised in terrain of various ages, resolvable using the Mars Orbiter Laser Altimeter (MOLA) and the Thermal Emission Imaging System (THEMIS). Four of the valleys originate in point sources with negligible contributions from tributaries, three are very poorly dissected with a few large tributaries separated by long uninterrupted trunks, and three exhibit the dendritic, branching morphology typical of terrestrial channel networks. We generated width-area and slope-area relationships for each because these relations are identified as either theoretically predicted or robust terrestrial empiricisms for graded precipitation-fed, perennial channels. We also generated distance-area relationships (Hack's law) because they similarly represent robust characteristics of terrestrial channels (whether perennial or ephemeral). We find that the studied Martian valleys, even the dendritic ones, do not satisfy those empiricisms. On Mars, the width-area scaling exponent b of -0.7-4.7 contrasts with values of 0.3-0.6 typical of terrestrial channels; the slope-area scaling exponent $\\theta$ ranges from -25.6-5.5, whereas values of 0.3-0.5 are typical on Earth; the length-area, or Hack's exponent n ranges from 0.47 to 19.2, while values of 0.5-0.6 are found on Earth. None of the valleys analyzed satisfy all three relations typical of terrestrial perennial channels. As such, our analysis supports the hypotheses that ephemeral and/or immature channel morphologies provide the closest terrestrial analogs to the dendritic networks on Mars, and point source discharges provide terrestrial analogs best suited to describe the other large Martian valleys.

The Role of Source Material in Basin Sedimentation, as Illustrated within Eureka Valley, Death Valley National Park, CA.

NASA Astrophysics Data System (ADS)

Lawson, M. J.; Yin, A.; Rhodes, E. J.

2015-12-01

Steep landscapes are known to provide sediment to sink regions, but often petrological factors can dominate basin sedimentation. Within Eureka Valley, in northwestern Death Valley National Park, normal faulting has exposed a steep cliff face on the western margin of the Last Chance range with four kilometers of vertical relief from the valley floor and an angle of repose of nearly 38 degrees. The cliff face is composed of Cambrian limestone and dolomite, including the Bonanza King, Carrara and Wood Canyon formations. Interacting with local normal faulting, these units preferentially break off the cliff face in coherent blocks, which result in landslide deposits rather than as finer grained material found within the basin. The valley is well known for a large sand dune, which derives its sediment from distal sources to the north, instead of from the adjacent Last Chance Range cliff face. During the Holocene, sediment is sourced primary from the northerly Willow Wash and Cucomungo canyon, a relatively small drainage (less than 80 km2) within the Sylvan Mountains. Within this drainage, the Jurassic quartz monzonite of Beer Creek is heavily fractured due to motion of the Fish Valley Lake - Death Valley fault zone. Thus, the quartz monzonite is more easily eroded than the well-consolidated limestone and dolomite that forms the Last Change Range cliff face. As well, the resultant eroded material is smaller grained, and thus more easily transported than the limestone. Consequently, this work highlights an excellent example of the strong influence that source material can have on basin sedimentation.

Boulder Valley Schools Teen Parenting Program.

ERIC Educational Resources Information Center

Parmerlee-Greiner, Gloria

To meet the needs of pregnant and parenting adolescents in Boulder Valley (Colorado), the local public school district has developed the Boulder Valley Schools Teen Parenting Program, now in its 12th year. The program was designed to help teen parents to mature to meet the challenges of parenting, enhance the school district's dropout/intervention…

29 CFR 516.22 - Employees engaged in charter activities of carriers pursuant to section 7(n) of the Act.

Code of Federal Regulations, 2010 CFR

2010-07-01

... respect to each employee employed in charter activities for a street, suburban or interurban electric railway or local trolley or motorbus carrier pursuant to section 7(n) of the Act, the employer shall...

Collective Bargaining Agreement between Antelope Valley Community College and Antelope Valley College Faculty Association, June 13, 1988.

ERIC Educational Resources Information Center

Antelope Valley Coll., Lancaster, CA.

The collective bargaining agreement between Antelope Valley Community College and the Antelope Valley College Faculty Association outlines the terms of employment for all full- and part-time certificated employees of the District, covering the period from June 1988 to June 1990. The articles in the agreement set forth provisions related to: (1)…

Volume of Valley Networks on Mars and Its Hydrologic Implications

NASA Astrophysics Data System (ADS)

Luo, W.; Cang, X.; Howard, A. D.; Heo, J.

2015-12-01

Valley networks on Mars are river-like features that offer the best evidence for water activities in its geologic past. Previous studies have extracted valley network lines automatically from digital elevation model (DEM) data and manually from remotely sensed images. The volume of material removed by valley networks is an important parameter that could help us infer the amount of water needed to carve the valleys. A progressive black top hat (PBTH) transformation algorithm has been adapted from image processing to extract valley volume and successfully applied to simulated landform and Ma'adim Valles, Mars. However, the volume of valley network excavation on Mars has not been estimated on a global scale. In this study, the PBTH method was applied to the whole Mars to estimate this important parameter. The process was automated with Python in ArcGIS. Polygons delineating the valley associated depressions were generated by using a multi-flow direction growth method, which started with selected high point seeds on a depth grid (essentially an inverted valley) created by PBTH transformation and grew outward following multi-flow direction on the depth grid. Two published versions of valley network lines were integrated to automatically select depression polygons that represent the valleys. Some crater depressions that are connected with valleys and thus selected in the previous step were removed by using information from a crater database. Because of large distortion associated with global dataset in projected maps, the volume of each cell within a valley was calculated using the depth of the cell multiplied by the spherical area of the cell. The volumes of all the valley cells were then summed to produce the estimate of global valley excavation volume. Our initial result of this estimate was ~2.4×1014 m3. Assuming a sediment density of 2900 kg/m3, a porosity of 0.35, and a sediment load of 1.5 kg/m3, the global volume of water needed to carve the valleys was

Geology and ground water in Russian River Valley areas and in Round, Laytonville, and Little Lake Valleys, Sonoma and Mendocino Counties, California

USGS Publications Warehouse

Cardwell, G.T.

1965-01-01

This report describes the occurrence, availability, and quality of ground water in seven valley areas along the course of the Russian River in Sonoma and Mendocino Counties, Calif., and in three valleys in the upper drainage reach of the Eel River in Mendocino County. Except for the westward-trending lower Russian River valley, the remaining valley areas along the Russian River (Healdsburg, Alexander, Cloverdale, Sanel, Ukiah, and Potter Valleys) lie in northwest-trending structurally controlled depressions formed in marine rocks of Jurassic and Cretaceous age. The principal aquifer in all the valleys is the alluvium of Recent age, which includes highly permeable channel deposits of gravel and sand. Water for domestic, irrigation, industrial, and other uses is developed by (1) direct diversion from the Russian River and its tributaries, (2) withdrawal of ground water and river water from shallow wells near the river, and (3) withdrawals of ground water from wells in alluvial deposits at varying distances from the river. Surface water in the Russian River and most tributaries is of good chemical quality. The water is a calcium magnesium bicarbonate type and contains 75,200 parts per million of dissolved solids. Ground water is also of good chemical quality throughout most of the drainage basin, but the concentration of dissolved solids (100-300 parts per million) is somewhat higher than that in the surface water. Round, Laytonville, and Little Lake Valleys are in central and northern Mendocino County in the drainage basin of the northwestward flowing Eel River. In Round Valley the alluvium of Recent age yields water of good chemical quality in large quantities. Yields are lower and the chemical quality poorer in Laytonville Valley. Ground water in Little Lake Valley is relatively undeveloped. Selected descriptions of wells, drillers' logs, chemical analyses, and hydrographs showing water-level fluctuations are included in the report. Accompanying maps show the

Lateral groundwater inflows into alluvial aquifers of main alpine valleys

NASA Astrophysics Data System (ADS)

Burger, Ulrich

2015-04-01

In alpine regions the topography is mainly characterised by deep incised valleys, mountain slopes and ridges. Usually the main valleys contain aquifers in alluvial soft rock. Lateral these aquifers are confined by mountainous hard rock slopes covered by heterogeneous sediments with different thickness. The slopes can be incised by lateral valleys. Numerical models for the main alluvial aquifers ask for lateral hydrogeological boundaries. Usually no flow boundaries or Constant head Boundaries are used, even if the lateral inflows to the main aquifers are rarely known. In this example a data set for a detailed investigated and monitored area is studied to give an answer on the location and the quantification of these lateral subsurface inflows. The study area is a typical main alpine valley with a thick alluvial aquifer (appr. 120m thick), lateral confined by granite, covered at the base of the steep slopes by quaternary sediments (Burger at al. 2012). The study consists of several steps 1.) Analytical calculation of the inflows on the base of investigated and monitored 2d profiles along fault zones (Perello et al 2013) which pinch out in the main valley 2.) Analytical models along typical W-dipping slopes with monitored slope springs 3.) Evaluating temperature and electrical conductivity profiles measured in approx. 30 groundwater wells in the alluvial aquifers and along the slopes to locate main lateral subsurface inflows 4.) Output of a regional model used for the hydrogeological back analyses of the excavation of a tunnel (Baietto et al. 2014) 5.) Output of a local numerical model calibrated with a monitoring dataset and results of a pumping test of big scale (450l/s for 10days) Results of these analyses are shown to locate and quantify the lateral groundwater inflows in the main alluvial aquifer. References Baietto A., Burger U., Perello P. (2014): Hydrogeological modelling applications in tunnel excavations: examples from tunnel excavations in granitic rocks

27 CFR 9.76 - Knights Valley.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Knights Valley. 9.76 Section 9.76 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.76 Knights Valley. (a) Name. The name of the viticultura...

27 CFR 9.29 - Sonoma Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Sonoma Valley. 9.29 Section 9.29 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.29 Sonoma Valley. (a) Name. The name of the viticultural...

27 CFR 9.23 - Napa Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Napa Valley. 9.23 Section 9.23 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.23 Napa Valley. (a) Name. The name of the viticultural area...

27 CFR 9.23 - Napa Valley.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Napa Valley. 9.23 Section 9.23 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.23 Napa Valley. (a) Name. The name of the viticultural area...

27 CFR 9.76 - Knights Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Knights Valley. 9.76 Section 9.76 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.76 Knights Valley. (a) Name. The name of the viticultura...

27 CFR 9.29 - Sonoma Valley.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Sonoma Valley. 9.29 Section 9.29 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.29 Sonoma Valley. (a) Name. The name of the viticultural...

27 CFR 9.23 - Napa Valley.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Napa Valley. 9.23 Section 9.23 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.23 Napa Valley. (a) Name. The name of the viticultural area...

27 CFR 9.23 - Napa Valley.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Napa Valley. 9.23 Section 9.23 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.23 Napa Valley. (a) Name. The name of the viticultural area...

27 CFR 9.142 - Bennett Valley.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Bennett Valley. 9.142 Section 9.142 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.142 Bennett Valley. (a) Name. The name of the...

27 CFR 9.29 - Sonoma Valley.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Sonoma Valley. 9.29 Section 9.29 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.29 Sonoma Valley. (a) Name. The name of the viticultural...

27 CFR 9.29 - Sonoma Valley.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Sonoma Valley. 9.29 Section 9.29 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.29 Sonoma Valley. (a) Name. The name of the viticultural...

27 CFR 9.53 - Alexander Valley.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Alexander Valley. 9.53 Section 9.53 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.53 Alexander Valley. (a) Name. The name of the...

27 CFR 9.53 - Alexander Valley.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Alexander Valley. 9.53 Section 9.53 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.53 Alexander Valley. (a) Name. The name of the...

27 CFR 9.76 - Knights Valley.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Knights Valley. 9.76 Section 9.76 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.76 Knights Valley. (a) Name. The name of the viticultura...

27 CFR 9.76 - Knights Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Knights Valley. 9.76 Section 9.76 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.76 Knights Valley. (a) Name. The name of the viticultura...

27 CFR 9.23 - Napa Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Napa Valley. 9.23 Section 9.23 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.23 Napa Valley. (a) Name. The name of the viticultural area...

27 CFR 9.29 - Sonoma Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Sonoma Valley. 9.29 Section 9.29 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.29 Sonoma Valley. (a) Name. The name of the viticultural...

27 CFR 9.142 - Bennett Valley.

Code of Federal Regulations, 2012 CFR

2012-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2012-04-01 2012-04-01 false Bennett Valley. 9.142 Section 9.142 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.142 Bennett Valley. (a) Name. The name of the...

27 CFR 9.142 - Bennett Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Bennett Valley. 9.142 Section 9.142 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.142 Bennett Valley. (a) Name. The name of the...

27 CFR 9.142 - Bennett Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Bennett Valley. 9.142 Section 9.142 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.142 Bennett Valley. (a) Name. The name of the...

27 CFR 9.53 - Alexander Valley.

Code of Federal Regulations, 2010 CFR

2010-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2010-04-01 2010-04-01 false Alexander Valley. 9.53 Section 9.53 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.53 Alexander Valley. (a) Name. The name of the...

27 CFR 9.76 - Knights Valley.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Knights Valley. 9.76 Section 9.76 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.76 Knights Valley. (a) Name. The name of the viticultura...

27 CFR 9.53 - Alexander Valley.

Code of Federal Regulations, 2011 CFR

2011-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2011-04-01 2011-04-01 false Alexander Valley. 9.53 Section 9.53 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY LIQUORS AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.53 Alexander Valley. (a) Name. The name of the...

27 CFR 9.53 - Alexander Valley.

Code of Federal Regulations, 2014 CFR

2014-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2014-04-01 2014-04-01 false Alexander Valley. 9.53 Section 9.53 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.53 Alexander Valley. (a) Name. The name of the...

27 CFR 9.142 - Bennett Valley.

Code of Federal Regulations, 2013 CFR

2013-04-01

... 27 Alcohol, Tobacco Products and Firearms 1 2013-04-01 2013-04-01 false Bennett Valley. 9.142 Section 9.142 Alcohol, Tobacco Products and Firearms ALCOHOL AND TOBACCO TAX AND TRADE BUREAU, DEPARTMENT OF THE TREASURY ALCOHOL AMERICAN VITICULTURAL AREAS Approved American Viticultural Areas § 9.142 Bennett Valley. (a) Name. The name of the...

Rift Valley fever in Namibia, 2010.

PubMed

Monaco, Federica; Pinoni, Chiara; Cosseddu, Gian Mario; Khaiseb, Siegfried; Calistri, Paolo; Molini, Umberto; Bishi, Alec; Conte, Annamaria; Scacchia, Massimo; Lelli, Rossella

2013-12-01

During May-July 2010 in Namibia, outbreaks of Rift Valley fever were reported to the National Veterinary Service. Analysis of animal specimens confirmed virus circulation on 7 farms. Molecular characterization showed that all outbreaks were caused by a strain of Rift Valley fever virus closely related to virus strains responsible for outbreaks in South Africa during 2009-2010.

East African Rift Valley, Kenya

NASA Technical Reports Server (NTRS)

1990-01-01

This rare, cloud free view of the East African Rift Valley, Kenya (1.5N, 35.5E) shows a clear view of the Turkwell River Valley, an offshoot of the African REift System. The East African Rift is part of a vast plate fracture which extends from southern Turkey, through the Red Sea, East Africa and into Mozambique. Dark green patches of forests are seen along the rift margin and tea plantations occupy the cooler higher ground.

Sealed substrate carrier for electroplating

DOEpatents

Ganti, Kalyana Bhargava [Fremont, CA

2012-07-17

One embodiment relates to a substrate carrier for use in electroplating a plurality of substrates. The substrate carrier includes a non-conductive carrier body on which the substrates are held, and conductive lines are embedded within the carrier body. A conductive bus bar is embedded into a top side of the carrier body and is conductively coupled to the conductive lines. A thermoplastic overmold covers a portion of the bus bar, and there is a plastic-to-plastic bond between the thermoplastic overmold and the non-conductive carrier body. Other embodiments, aspects and features are also disclosed.

Motor Carrier Drug And Alcohol Violations: Comparison Of Compliance Review Data From SafeStat Selected Carriers And A Random Sample Of Carriers

DOT National Transportation Integrated Search

2000-10-01

There has been interest in the extent to which motor carriers are in compliance with Part 382 of the Federal Motor Carrier Safety Regulations (Controlled Substances and Alcohol Use Testing), as well as the extent to which the Federal Motor Carrier Sa...

Total carbon and nitrogen in mineral soil after 26 years of prescribed fire: Long Valley and Fort Valley Experimental Forests (P-53)

Treesearch

Daniel G. Neary; Sally M. Haase; Steven T. Overby

2008-01-01

Prescribed fire was introduced to high density ponderosa pine stands at Fort Valley and Long Valley Experimental Forests in 1976. This paper reports on mineral soil total carbon (C) and nitrogen (N) at Long Valley. Total soil C and N levels were highly variable and exhibited an increasing, but inconsistent, concentration trend related to burn interval. Total N ranged...

Wilderness, water, and quality of life in the Bitterroot Valley

Treesearch

Kari Gunderson; Clint Cook

2007-01-01

The Bitterroot Valley is located in western Montana, U.S.A. Most of the Bitterroot Range above the Bitterroot Valley is protected as wilderness, and is a source of much of the water that flows down and through the valley floor. With an annual precipitation of only 12.3 inches, the Bitterroot Valley is classified as a high desert environment. Today the quality of life...

Fracture controls on valley persistence: the Cairngorm Granite pluton, Scotland

NASA Astrophysics Data System (ADS)

Hall, A. M.; Gillespie, M. R.

2017-09-01

Valleys are remarkably persistent features in many different tectonic settings, but the reasons for this persistence are rarely explored. Here, we examine the structural controls on valleys in the Cairngorms Mountains, Scotland, part of the passive margin of the eastern North Atlantic. We consider valleys at three scales: straths, glens and headwater valleys. The structural controls on valleys in and around the Cairngorm Granite pluton were examined on satellite and aerial photographs and by field survey. Topographic lineaments, including valleys, show no consistent orientation with joint sets or with sheets of microgranite and pegmatitic granite. In this granite landscape, jointing is not a first-order control on valley development. Instead, glens and headwater valleys align closely to quartz veins and linear alteration zones (LAZs). LAZs are zones of weakness in the granite pluton in which late-stage hydrothermal alteration and hydro-fracturing have greatly reduced rock mass strength and increased permeability. LAZs, which can be kilometres long and >700 m deep, are the dominant controls on the orientation of valleys in the Cairngorms. LAZs formed in the roof zone of the granite intrusion. Although the Cairngorm pluton was unroofed soon after emplacement, the presence of Old Red Sandstone (ORS) outliers in the terrain to the north and east indicates that the lower relief of the sub-ORS basement surface has been lowered by <500 m. Hence, the valley patterns in and around the Cairngorms have persisted through >1 km of vertical erosion and for 400 Myr. This valley persistence is a combined product of regionally low rates of basement exhumation and of the existence of LAZs in the Cairngorm pluton and sub-parallel Caledonide fractures in the surrounding terrain with depths that exceed 1 km.

Transparent conductor-embedding nanocones for selective emitters: optical and electrical improvements of Si solar cells

PubMed Central

Kim, Joondong; Yun, Ju-Hyung; Kim, Hyunyub; Cho, Yunae; Park, Hyeong-Ho; Kumar, M. Melvin David; Yi, Junsin; Anderson, Wayne A.; Kim, Dong-Wook

2015-01-01

Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells. Conventional wet-etching process was performed to form the nanocone-arrays for a large area, which spontaneously provides the graded doping features for a selective emitter. This enables to lower the electrical contact resistance and enhances the carrier collection due to the high electric field distribution through a nanocone. Optically, the convex-shaped nanocones efficiently reduce light-reflection and the incident light is effectively focused into Si via nanocone structure, resulting in an extremely improved the carrier collection performances. This nanocone-arrayed selective emitter simultaneously satisfies optical and electrical improvement. We report the record high efficiency of 16.3% for the periodically nanoscale patterned emitter Si solar cell. PMID:25787933

Transparent conductor-embedding nanocones for selective emitters: optical and electrical improvements of Si solar cells.

PubMed

Kim, Joondong; Yun, Ju-Hyung; Kim, Hyunyub; Cho, Yunae; Park, Hyeong-Ho; Kumar, M Melvin David; Yi, Junsin; Anderson, Wayne A; Kim, Dong-Wook

2015-03-19

Periodical nanocone-arrays were employed in an emitter region for high efficient Si solar cells. Conventional wet-etching process was performed to form the nanocone-arrays for a large area, which spontaneously provides the graded doping features for a selective emitter. This enables to lower the electrical contact resistance and enhances the carrier collection due to the high electric field distribution through a nanocone. Optically, the convex-shaped nanocones efficiently reduce light-reflection and the incident light is effectively focused into Si via nanocone structure, resulting in an extremely improved the carrier collection performances. This nanocone-arrayed selective emitter simultaneously satisfies optical and electrical improvement. We report the record high efficiency of 16.3% for the periodically nanoscale patterned emitter Si solar cell.

Airborne Dust Models in Valley Fever Research

NASA Astrophysics Data System (ADS)

Sprigg, W. A.; Galgiani, J. N.; Vujadinovic, M.; Pejanovic, G.; Vukovic, A. J.; Prasad, A. K.; Djurdjevic, V.; Nickovic, S.

2011-12-01

Dust storms (haboobs) struck Phoenix, Arizona, in 2011 on July 5th and again on July 18th. One potential consequence: an estimated 3,600 new cases of Valley Fever in Maricopa County from the first storm alone. The fungi, Coccidioides immitis, the cause of the respiratory infection, Valley Fever, lives in the dry desert soils of the American southwest and southward through Mexico, Central America and South America. The fungi become part of the dust storm and, a few weeks after inhalation, symptoms of Valley Fever may appear, including pneumonia-like illness, rashes, and severe fatigue. Some fatalities occur. Our airborne dust forecast system predicted the timing and extent of the storm, as it has done with other, often different, dust events. Atmosphere/land surface models can be part of public health services to reduce risk of Valley Fever and exacerbation of other respiratory and cardiovascular illness.

Apparent cooperativity of amino acid transport in Halobacterium halobium - Effect of electrical potential

NASA Technical Reports Server (NTRS)

Lanyi, J. K.

1978-01-01

Active serine accumulation in cell envelope vesicles from Halobacterium halobium proceeds by co-transport with Na(+) and can be induced by either transmembrane electrical potential or transmembrane Na(+) concentration difference. It was shown earlier that in the former case the initial transport rate is a fourth-power function of the magnitude of the electrochemical potential difference of sodium ions, and in the latter, a second-power function. A possible interpretation of this finding is cooperativity of sodium-transporting sites in the transport carrier. When both kinds of driving force are imposed simultaneously on the vesicles, fourth-power dependence on the total potential difference of sodium ions is obtained, suggesting that the transport carrier is regulated by the electrical potential. Heat treatment of the vesicles at 48 C partially inactivates transport and abolishes this effect of the electrical potential.

Current shock: Competition in electricity service

DOE Office of Scientific and Technical Information (OSTI.GOV)

Stuntz, L.G.

1995-07-01

Consumers may not have given much thought to who supplies their electricity, or how, but they should know that a tremendous battle is being waged behind their electrical sockets. Just as several long-distance telecommunication carriers (AT&T, Spring, MCI) now compete to serve each household, so too firms with currently unfamiliar names may one day - in the not-so-distant future - be competing to supply household electricity. Whether, when, and how this happens are questions at the center of a vigorous debate occurring in Washington, in state capitals, and in courtrooms around the United States. Many utilities, small consumer groups, andmore » environmentalists argue that moving to wide-open competition in electricity markets will benefit only the largest customers. With enhanced competition, what becomes of the electric utilities` historic obligation to serve? Customers and society may not be prepared to assume the risk that some customers could become, quite literally, powerless.« less

California: Diamond Valley

Atmospheric Science Data Center

2014-05-15

... article title:  Watching the Creation of Southern California's Largest Reservoir     ... Valley Lake is designed to provide protection against drought and a six-month emergency supply in the event of earthquake damage to a ...

Mzab Valley, Algeria

NASA Image and Video Library

2011-03-24

Located 600 km south of Algiers, Algeria in the heart of the Sahara Desert, the five ksour fortified villages of the MZab Valley form an extraordinarily homogenous ensemble in this image captured by NASA Terra spacecraft.

Effect of the RC time on photocurrent transients and determination of charge carrier mobilities

NASA Astrophysics Data System (ADS)

Kniepert, Juliane; Neher, Dieter

2017-11-01

We present a closed analytical model to describe time dependent photocurrents upon pulsed illumination in the presence of an external RC circuit. In combination with numerical drift diffusion simulations, it is shown that the RC time has a severe influence on the shape of the transients. In particular, the maximum of the photocurrent is delayed due to a delayed recharging of the electrodes. This delay increases with the increasing RC constant. As a consequence, charge carrier mobilities determined from simple extrapolation of the initial photocurrent decay will be in general too small and feature a false dependence on the electric field. Here, we present a recipe to correct charge carrier mobilities determined from measured photocurrent transients by taking into account the RC time of the experimental set-up. We also demonstrate how the model can be used to more reliably determine the charge carrier mobility from experimental data of a typical polymer/fullerene organic solar cell. It is shown that further aspects like a finite rising time of the pulse generator and the current contribution of the slower charger carriers influence the shape of the transients and may lead to an additional underestimation of the transit time.

Electrical Rectification in Betaine Derivatives

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sumpter, Bobby G; Meunier, Vincent; Filho, Antonio G. Souza

2008-01-01

We theoretically investigate the electric rectification in an organic two terminal push-pull molecular device using a combination of ab initio techniques. Our main finding is that the electric rectification is extremely sensitive to the length of the chain, undergoing a complete switching after a specific chain length. This unique process occurs for betainelike donor- bridge-acceptor systems and is directly associated with a conjugated bridge in the presence of an external electric field. The conjugated bridge between the donor and acceptor groups is composed of oligoethylene with sizes ranging from zero to ten C=C units. The appearance of electric rectification occursmore » when the bridge size is equal to 5 units and is complete for those larger than 6 units (i.e. full inversion). This new electronic effect is advantageous for the design of large hybrid organic/inorganic circuits with anincreased majority carrier flow that is necessary for the emerging needs of nanotechnology.« less

Structural, optical and Carrier dynamics of self-assembled InGaN nanocolumns on Si(111)

NASA Astrophysics Data System (ADS)

Kumar, Praveen; Devi, Pooja; Soto Rodriguez, P. E. D.; Jain, Rishabh; Jaggi, Neena; Sinha, R. K.; Kumar, Mahesh

2018-05-01

We investigated the morphological, structural, optical, electrical and carrier relaxation dynamic changes on the self-assembled grown InGaN nanocolumns (NCs) directly on p-Si(111) substrate at two different substrate temperature, namely 580 °C (A) and 500 °C (B). The emission wavelength of comparably low temperature (LT) grown NCs was red-shifted from 3.2eV to 2.4eV. First observations on the charge carrier dynamics of these directly grown NCs show comparable broad excited state absorption (ESA) for LT gown NCs, which manifest bi-exponential decay due to the radiative defects generated during the coalescence of these NCs.

2012-2013 Delaware Valley Household Travel Survey | Transportation Secure

Science.gov Websites

Data Center | NREL 12-2013 Delaware Valley Household Travel Survey 2012-2013 Delaware Valley Household Travel Survey The 2012-2013 Delaware Valley Household Travel Survey collected data for multiple ) sponsored the survey in collaboration with AbtSRBI. Methodology A sampling strategy was designed to recruit

Fluvial valleys on Martian volcanoes

NASA Technical Reports Server (NTRS)

Baker, Victor R.; Gulick, Virginia C.

1987-01-01

Channels and valleys were known on the Martian volcanoes since their discovery by the Mariner 9 mission. Their analysis has generally centered on interpretation of possible origins by fluvial, lava, or viscous flows. The possible fluvial dissection of Martian volcanoes has received scant attention in comparison to that afforded outflow, runoff, and fretted channels. Photointerpretative, mapping, and morphometric studies of three Martian volcanoes were initiated: Ceraunius Tholus, Hecate Tholus, and Alba Patera. Preliminary morphometric results indicate that, for these three volcanoes, valley junction angles increase with decreasing slope. Drainage densities are quite variable, apparently reflecting complex interactions in the landscape-forming factors described. Ages of the Martian volcanoes were recently reinterpreted. This refined dating provides a time sequence in which to evaluate the degradational forms. An anomaly has appeared from the initial study: fluvial valleys seem to be present on some Martian volcanoes, but not on others of the same age. Volcanic surfaces characterized only by high permeability lava flows may have persisted without fluvial dissection.

Evaluation of local free carrier concentrations in individual heavily-doped GaN:Si micro-rods by micro-Raman spectroscopy

NASA Astrophysics Data System (ADS)

Mohajerani, M. S.; Khachadorian, S.; Schimpke, T.; Nenstiel, C.; Hartmann, J.; Ledig, J.; Avramescu, A.; Strassburg, M.; Hoffmann, A.; Waag, A.

2016-02-01