Enhancing Modulation of Thermal Conduction in Vanadium Dioxide Thin Film by Nanostructured Nanogaps

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choe, Hwan Sung; Suh, Joonki; Ko, Changhyun

Efficient thermal management at the nanoscale is important for reducing energy consumption and dissipation in electronic devices, lab-on-a-chip platforms and energy harvest/conversion systems. For many of these applications, it is much desired to have a solid-state structure that reversibly switches thermal conduction with high ON/OFF ratios and at high speed. We describe design and implementation of a novel, all-solid-state thermal switching device by nanostructured phase transformation, i.e., modulation of contact pressure an d area between two poly-silicon surfaces activated by microstructural change of a vanadium dioxide (VO 2 ) thin film. Our solid-state devices demonstrate large and reversible alteration ofmore » cross-plane thermal conductance as a function of temperature, achieving a conductance ratio of at least 2.5. This new approach using nanostructured phase transformation provides new opportunities for applications that require advanced temperature and heat regulations.« less

Influence of Heat Treatment Conditions on the Properties of Vanadium Oxide Thin Films for Thermochromic Applications.

PubMed

Kim, Donguk; Kwon, Samyoung; Park, Young; Boo, Jin-Hyo; Nam, Sang-Hun; Joo, Yang Tae; Kim, Minha; Lee, Jaehyeong

2016-05-01

In present work, the effects of the heat treatment on the structural, optical, and thermochromic properties of vanadium oxide films were investigated. Vanadium dioxide (VO2) thin films were deposited on glass substrate by reactive pulsed DC magnetron sputtering from a vanadium metal target in mixture atmosphere of argon and oxygen gas. Various heat treatment conditions were applied in order to evaluate their influence on the crystal phases formed, surface morphology, and optical properties. The films were characterized by an X-ray diffraction (XRD) in order to investigate the crystal structure and identify the phase change as post-annealing temperature of 500-600 degrees C for 5 minutes. Surface conditions of the obtained VO2(M) films were analyzed by field emission scanning electron microscopy (FE-SEM) and the semiconductor-metal transition (SMT) characteristics of the VO2 films were evaluate by optical spectrophotometry in the UV-VIS-NIR, controlling temperature of the films.

Control of the metal-insulator transition in vanadium dioxide by modifying orbital occupancy

NASA Astrophysics Data System (ADS)

Aetukuri, Nagaphani B.; Gray, Alexander X.; Drouard, Marc; Cossale, Matteo; Gao, Li; Reid, Alexander H.; Kukreja, Roopali; Ohldag, Hendrik; Jenkins, Catherine A.; Arenholz, Elke; Roche, Kevin P.; Dürr, Hermann A.; Samant, Mahesh G.; Parkin, Stuart S. P.

2013-10-01

External control of the conductivity of correlated oxides is one of the most promising schemes for realizing energy-efficient electronic devices. Vanadium dioxide (VO2), an archetypal correlated oxide compound, undergoes a temperature-driven metal-insulator transition near room temperature with a concomitant change in crystal symmetry. Here, we show that the metal-insulator transition temperature of thin VO2(001) films can be changed continuously from ~285 to ~345K by varying the thickness of the RuO2 buffer layer (resulting in different epitaxial strains). Using strain-, polarization- and temperature-dependent X-ray absorption spectroscopy, in combination with X-ray diffraction and electronic transport measurements, we demonstrate that the transition temperature and the structural distortion across the transition depend on the orbital occupancy in the metallic state. Our findings open up the possibility of controlling the conductivity in atomically thin VO2 layers by manipulating the orbital occupancy by, for example, heterostructural engineering.

Elevated transition temperature in Ge doped VO2 thin films

NASA Astrophysics Data System (ADS)

Krammer, Anna; Magrez, Arnaud; Vitale, Wolfgang A.; Mocny, Piotr; Jeanneret, Patrick; Guibert, Edouard; Whitlow, Harry J.; Ionescu, Adrian M.; Schüler, Andreas

2017-07-01

Thermochromic GexV1-xO2+y thin films have been deposited on Si (100) substrates by means of reactive magnetron sputtering. The films were then characterized by Rutherford backscattering spectrometry (RBS), four-point probe electrical resistivity measurements, X-ray diffraction, and atomic force microscopy. From the temperature dependent resistivity measurements, the effect of Ge doping on the semiconductor-to-metal phase transition in vanadium oxide thin films was investigated. The transition temperature was shown to increase significantly upon Ge doping (˜95 °C), while the hysteresis width and resistivity contrast gradually decreased. The precise Ge concentration and the film thickness have been determined by RBS. The crystallinity of phase-pure VO2 monoclinic films was confirmed by XRD. These findings make the use of vanadium dioxide thin films in solar and electronic device applications—where higher critical temperatures than 68 °C of pristine VO2 are needed—a viable and promising solution.

Effect of annealing on optical properties and structure of the vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Zhu, Huiqun; Li, Yi; Li, Yuming; Huang, Yize; Tong, Guoxiang; Fang, Baoying; Zheng, Qiuxin; Li, Liu; Shen, Yujian

2012-10-01

VO2 thin films were prepared on soda-lime glass substrates by DC magnetron sputtering at room temperature using vanadium target and post annealing in air. X-ray diffraction and FTIR spectroscopy analyses showed that the films obtained at the optimized parameters have high VO2 (011) orientation. Both low temperature deposition and post annealing method were beneficial to grow the nano-films with pure VO2 phase-structure and composition. Metalinsulator transition properties of the VO2 films in terms of infrared transmittance, transmittance variation and film thickness were investigated under varying annealing temperature. Results showed that infrared transmittance variation and transition temperature of the nano-films were significantly improved and reduced respectively. Therefore, this study was able to develop practical low-cost preparation methods for high-performance intelligent energy-saving thin films.

In situ electrical resistivity measurements of vanadium thin films performed in vacuum during different annealing cycles

NASA Astrophysics Data System (ADS)

Pedrosa, Paulo; Cote, Jean-Marc; Martin, Nicolas; Arab Pour Yazdi, Mohammad; Billard, Alain

2017-02-01

The present study describes a sputtering and in situ vacuum electrical resistivity setup that allows a more efficient sputtering-oxidation coupling process for the fabrication of oxide compounds like vanadium dioxide, VO2. After the sputtering deposition of pure V thin films, the proposed setup enables the sample holder to be transferred from the sputtering to the in situ annealing + resistivity chamber without venting the whole system. The thermal oxidation of the V films was studied by implementing two different temperature cycles up to 550 °C, both in air (using a different resistivity setup) and vacuum conditions. Main results show that the proposed system is able to accurately follow the different temperature setpoints, presenting clean and low-noise resistivity curves. Furthermore, it is possible to identify the formation of different vanadium oxide phases in air, taking into account the distinct temperature cycles used. The metallic-like electrical properties of the annealed coatings are maintained in vacuum whereas those heated in air produce a vanadium oxide phase mixture.

In situ electrical resistivity measurements of vanadium thin films performed in vacuum during different annealing cycles.

PubMed

Pedrosa, Paulo; Cote, Jean-Marc; Martin, Nicolas; Arab Pour Yazdi, Mohammad; Billard, Alain

2017-02-01

The present study describes a sputtering and in situ vacuum electrical resistivity setup that allows a more efficient sputtering-oxidation coupling process for the fabrication of oxide compounds like vanadium dioxide, VO 2 . After the sputtering deposition of pure V thin films, the proposed setup enables the sample holder to be transferred from the sputtering to the in situ annealing + resistivity chamber without venting the whole system. The thermal oxidation of the V films was studied by implementing two different temperature cycles up to 550 °C, both in air (using a different resistivity setup) and vacuum conditions. Main results show that the proposed system is able to accurately follow the different temperature setpoints, presenting clean and low-noise resistivity curves. Furthermore, it is possible to identify the formation of different vanadium oxide phases in air, taking into account the distinct temperature cycles used. The metallic-like electrical properties of the annealed coatings are maintained in vacuum whereas those heated in air produce a vanadium oxide phase mixture.

Analyzing optical properties of thin vanadium oxide films through semiconductor-to-metal phase transition using spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Sun, Jianing; Pribil, Greg K.

2017-11-01

We investigated the optical behaviors of vanadium dioxide (VO2) films through the semiconductor-to-metal (STM) phase transition using spectroscopic ellipsometry. Correlations between film thickness and refractive index were observed resulting from the absorbing nature of these films. Simultaneously analyzing data at multiple temperatures using Kramers-Kronig consistent oscillator models help identify film thickness. Nontrivial variations in resulting optical constants were observed through STM transition. As temperature increases, a clear increase is observed in near infrared absorption due to Drude losses that accompany the transition from semiconducting to metallic phases. Thin films grown on silicon and sapphire substrate present different optical properties and thermal hysteresis due to lattice stress and compositional differences.

Near-zero IR transmission of VO2 thin films deposited on Si substrate

NASA Astrophysics Data System (ADS)

Zhang, Chunzi; Koughia, Cyril; Li, Yuanshi; Cui, Xiaoyu; Ye, Fan; Shiri, Sheida; Sanayei, Mohsen; Wen, Shi-Jie; Yang, Qiaoqin; Kasap, Safa

2018-05-01

Vanadium dioxide (VO2) thin films of different thickness have been deposited on Si substrates by using DC magnetron sputtering. The effects of substrate pre-treatment by means of seeding (spin coating and ultrasonic bathing) and biasing on the structure and optical properties were investigated. Seeding results in a smaller grain size in the oxide film, whereas biasing results in square-textured crystals. VO2 thin films of 150 nm thick show a near-zero IR transmission in switched state. Especially, the 150 nm thick VO2 thin film with seeding treatment shows an enhanced switching efficiency.

Optical switching and photoluminescence in erbium-implanted vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Lim, Herianto; Stavrias, Nikolas; Johnson, Brett C.; Marvel, Robert E.; Haglund, Richard F.; McCallum, Jeffrey C.

2014-03-01

Vanadium dioxide (VO2) is under intensive consideration for optical switching due to its reversible phase transition, which features a drastic and rapid shift in infrared reflectivity. Classified as an insulator-to-metal transition, the phase transition in VO2 can be induced thermally, electrically, and optically. When induced optically, the transition can occur on sub-picosecond time scales. It is interesting to dope VO2 with erbium ions (Er3+) and observe their combined properties. The first excited-state luminescence of Er3+ lies within the wavelength window of minimal transmission-loss in silicon and has been widely utilized for signal amplification and generation in silicon photonics. The incorporation of Er3+ into VO2 could therefore result in a novel photonic material capable of simultaneous optical switching and amplification. In this work, we investigate the optical switching and photoluminescence in Er-implanted VO2 thin films. Thermally driven optical switching is demonstrated in the Er-implanted VO2 by infrared reflectometry. Photoluminescence is observed in the thin films annealed at ˜800 °C or above. In addition, Raman spectroscopy and a statistical analysis of switching hysteresis are carried out to assess the effects of the ion implantation on the VO2 thin films. We conclude that Er-implanted VO2 can function as an optical switch and amplifier, but with reduced switching quality compared to pure VO2.

Preparation of VO2 thin film and its direct optical bit recording characteristics.

PubMed

Fukuma, M; Zembutsu, S; Miyazawa, S

1983-01-15

Vanadium dioxide (VO2) film which has nearly the same transition point as single crystal has been obtained by reactive evaporation of vanadium on glass and subsequent annealing in N2 gas. Relations between optical properties of V02 film and its preparation conditions are presented. We made optical direct bit recording on V02 film using a laser diode as the light source. The threshold recording energy and bit density are 2 mJ/cm 2 and 350 bits/mm, respectively. We also made tungsten doping to lower the V02 film transition temperature.

Vanadium dioxide thin films prepared on silicon by low temperature MBE growth and ex-situ annealing

NASA Astrophysics Data System (ADS)

Homm, Pia; van Bilzen, Bart; Menghini, Mariela; Locquet, Jean-Pierre; Ivanova, Todora; Sanchez, Luis; Sanchis, Pablo

Vanadium dioxide (VO2) is a material that shows an insulator to metal transition (IMT) near room temperature. This property can be exploited for applications in field effect devices, electro-optical switches and nonlinear circuit components. We have prepared VO2 thin films on silicon wafers by combining a low temperature MBE growth with an ex-situ annealing at high temperature. We investigated the structural, electrical and optical characteristics of films with thicknesses ranging from 10 to 100 nm. We have also studied the influence of the substrate cleaning. The films grown with our method are polycrystalline with a preferred orientation in the (011) direction of the monoclinic phase. For the films produced on silicon with a native oxide, an IMT at around 75 °C is observed. The magnitude of the resistance change across the IMT decreases with thickness while the refractive index at room temperature corresponds with values reported in the literature for thin films. The successful growth of VO2 films on silicon with good electrical and optical properties is an important step towards the integration of VO2 in novel devices. The authors acknowledge financial support from the FWO project G052010N10 and EU-FP7 SITOGA project. PH acknowledges support from Becas Chile - CONICYT.

Bipolar resistive switching in room temperature grown disordered vanadium oxide thin-film devices

NASA Astrophysics Data System (ADS)

Wong, Franklin J.; Sriram, Tirunelveli S.; Smith, Brian R.; Ramanathan, Shriram

2013-09-01

We demonstrate bipolar switching with high OFF/ON resistance ratios (>104) in Pt/vanadium oxide/Cu structures deposited entirely at room temperature. The SET (RESET) process occurs when negative (positive) bias is applied to the top Cu electrode. The vanadium oxide (VOx) films are amorphous and close to the vanadium pentoxide stoichiometry. We also investigated Cu/VOx/W structures, reversing the position of the Cu electrode, and found the same polarity dependence with respect to the top and bottom electrodes, which suggests that the bipolar nature is linked to the VOx layer itself. Bipolar switching can be observed at 100 °C, indicating that it not due to a temperature-induced metal-insulator transition of a vanadium dioxide second phase. We discuss how ionic drift can lead to the bipolar electrical behavior of our junctions, similar to those observed in devices based on several other defective oxides. Such low-temperature processed oxide switches could be of relevance to back-end or package integration processing schemes.

Ultra-thin, single-layer polarization rotator

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, T. V.; Truong, V. V., E-mail: Truong.Vo-Van@Concordia.Ca; Do, P. A.

We demonstrate light polarization control over a broad spectral range by a uniform layer of vanadium dioxide as it undergoes a phase transition from insulator to metal. Changes in refractive indices create unequal phase shifts on s- and p-polarization components of incident light, and rotation of linear polarization shows intensity modulation by a factor of 10{sup 3} when transmitted through polarizers. This makes possible polarization rotation devices as thin as 50 nm that would be activated thermally, optically or electrically.

Investigation of electron beam lithography effects on metal-insulator transition behavior of vanadium dioxide

NASA Astrophysics Data System (ADS)

Yuce, H.; Alaboz, H.; Demirhan, Y.; Ozdemir, M.; Ozyuzer, L.; Aygun, G.

2017-11-01

Vanadium dioxide (VO2) shows metal-insulator phase transition at nearly 68 °C. This metal-insulator transition (MIT) in VO2 leads to a significant change in near-infrared transmittance and an abrupt change in the resistivity of VO2. Due to these characteristics, VO2 plays an important role on optic and electronic devices, such as thermochromic windows, meta-materials with tunable frequency, uncooled bolometers and switching devices. In this work, VO2 thin films were fabricated by reactive direct current magnetron sputtering in O2/Ar atmosphere on sapphire substrates without any further post annealing processes. The effect of sputtering parameters on optical characteristics and structural properties of grown thin films was investigated by SEM, XRD, Raman and UV/VIS spectrophotometer measurements. Patterning process of VO2 thin films was realized by e-beam lithography technique to monitor the temperature dependent electrical characterization. Electrical properties of VO2 samples were characterized using microprobe station in a vacuum system. MIT with hysteresis behavior was observed for the unpatterned square samples at around 68 °C. By four orders of magnitude of resistivity change was measured for the deposited VO2 thin films at transition temperature. After e-beam lithography process, substantial results in patterned VO2 thin films were observed. In this stage, for patterned VO2 thin films as stripes, the change in resistivity of VO2 was reduced by a factor of 10. As a consequence of electrical resistivity measurements, MIT temperature was shifted from 68 °C to 50 °C. The influence of e-beam process on the properties of VO2 thin films and the mechanism of the effects are discussed. The presented results contribute to the achievement of VO2 based thermochromic windows and bolometer applications.

New Insights into the Diverse Electronic Phases of a Novel Vanadium Dioxide Polymorph: A Terahertz Spectroscopy Study

PubMed Central

Lourembam, James; Srivastava, Amar; La-o-vorakiat, Chan; Rotella, H.; Venkatesan, T.; Chia, Elbert E. M.

2015-01-01

A remarkable feature of vanadium dioxide is that it can be synthesized in a number of polymorphs. The conductivity mechanism in the metastable layered polymorph VO2(B) thin films has been investigated by terahertz time-domain spectroscopy (THz-TDS). In VO2(B), a critical temperature of 240 K marks the appearance of a non-zero Drude term in the observed complex conductivity, indicating the evolution from a pure insulating state towards a metallic state. In contrast, the THz conductivity of the well-known VO2(M1) is well fitted only by a modification of the Drude model to include backscattering. We also identified two different THz conductivity regimes separated by temperature in these two polymorphs. The electronic phase diagram is constructed, revealing that the width and onset of the metal-insulator transition in the B phase develop differently from the M1 phase. PMID:25777320

Temperature-dependent mechanical behavior of silicon dioxide, gold and gold-vanadium thin films for VLSI integrated circuits and MicroElectroMechanical systems (MEMs)

NASA Astrophysics Data System (ADS)

Lin, Ming-Tzer

The Semiconductor Industry has grown rapidly in the last twenty years. The national technology roadmap for semiconductors plans for developing the complexity and packing density of semiconductor devices into the next decade, allowing ever smaller and more densely packed structures to be fabricated. Recently, MEMS (Micro-Electro-Mechanical Systems) have become important in modern technology. The goal of MEMs is to integrate many types of miniature devices on a single chip, creating a new micro-world. The oxidation of silicon is one of the most important processes in semiconductor technology. Producing high-quality IC's and MEMS devices requires an understanding of the basic oxidation mechanism. In addition, for the reliability of IC's and MEMS devices, the mechanical properties of the oxide play a critical role. There has been an apparent convergence of opinion on the relevant mechanism leading to the "standard computational model" for stress effects on silicon oxidation. This model has recently become suspect. Most of the reasonably direct experimental data on the flow properties of SiO 2 thin film do not support a stress-dependent viscosity of the sort envisioned by the model. Gold and gold vanadium alloys are used in electrical interconnections and in radio frequency switch contacts for the semiconductor industry, MEMs sensors for the aerospace industry and also in brain probes by the bioelectronics mechanical industry. Despite the strong potential usage of gold and gold vanadium thin films at the small scale, very little is known about their mechanical properties. Our goal was to experimentally investigate stress and its influence on SiO2 thin films and the mechanical properties of gold and gold vanadium thin films at room temperature and at elevated temperature of different vanadium concentration. We found that the application of relatively small amounts of bending to an oxidizing silicon substrate leads to significant decreases in oxide thickness in the ultrathin oxide regime. Both tensile and compressive bending retard oxide growth, although compressive bending results in somewhat thinner oxides than does tensile bending. We also determined the modulus of gold and gold vanadium, and discovered that there is some evidence for a vanadium concentration dependence of the mechanical properties.

Dynamic structural colour using vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Wilson, K.; Marocico, C. A.; Bradley, A. L.

2018-06-01

A thin film stack consisting of layers of indium tin oxide (ITO) with an intermediate vanadium oxide (VO2) layer on an optically thick silver film has been investigated for dynamic structural colour. The structure benefits from the phase change properties of VO2. Compared with other phase change materials, such as germanium antimony telluride (GST), VO2 can be offered as a lower power consumption alternative. It has been overlooked in the visible spectral range due to its smaller refractive index change below 700 nm. We demonstrate that the sensitivity of the visible reflectance spectrum to the change in phase of a 30 nm VO2 layer is increased after it is incorporated in a thin film stack, with performance comparable to other phase change materials. The extent to which dynamic tuning of the reflectance spectra of ITO–VO2–ITO–Ag thin film stacks can be exploited for colour switching is reported, with approximately 25% change in reflectance demonstrated at 550 nm. Inclusion of a top ITO layer is also shown to improve the chromaticity change on phase transition.

Ultrafast electron-lattice coupling dynamics in VO2 and V2O3 thin films

NASA Astrophysics Data System (ADS)

Abreu, Elsa; Gilbert Corder, Stephanie N.; Yun, Sun Jin; Wang, Siming; Ramírez, Juan Gabriel; West, Kevin; Zhang, Jingdi; Kittiwatanakul, Salinporn; Schuller, Ivan K.; Lu, Jiwei; Wolf, Stuart A.; Kim, Hyun-Tak; Liu, Mengkun; Averitt, Richard D.

2017-09-01

Ultrafast optical pump-optical probe and optical pump-terahertz probe spectroscopy were performed on vanadium dioxide (VO2) and vanadium sesquioxide (V2O3 ) thin films over a wide temperature range. A comparison of the experimental data from these two different techniques and two different vanadium oxides, in particular a comparison of the spectral weight oscillations generated by the photoinduced longitudinal acoustic modulation, reveals the strong electron-phonon coupling that exists in both materials. The low-energy Drude response of V2O3 appears more amenable than VO2 to ultrafast strain control. Additionally, our results provide a measurement of the temperature dependence of the sound velocity in both systems, revealing a four- to fivefold increase in VO2 and a three- to fivefold increase in V2O3 across the insulator-to-metal phase transition. Our data also confirm observations of strong damping and phonon anharmonicity in the metallic phase of VO2, and suggest that a similar phenomenon might be at play in the metallic phase of V2O3 . More generally, our simple table-top approach provides relevant and detailed information about dynamical lattice properties of vanadium oxides, paving the way to similar studies in other complex materials.

Vanadium doped tin dioxide as a novel sulfur dioxide sensor.

PubMed

Das, S; Chakraborty, S; Parkash, O; Kumar, D; Bandyopadhyay, S; Samudrala, S K; Sen, A; Maiti, H S

2008-04-15

Considering the short-term exposure limit of SO2 to be 5 ppm, we first time report that semiconductor sensors based on vanadium doped SnO2 can be used for SO2 leak detection because of their good sensitivity towards SO2 at concentrations down to 5 ppm. Such sensors are quite selective in presence of other gases like carbon monoxide, methane and butane. The high sensitivity of vanadium doped tin dioxide towards SO2 may be understood by considering the oxidation of sulfur dioxide to sulfur trioxide on SnO2 surface through redox cycles of vanadium-sulfur-oxygen adsorbed species.

Enhanced luminous transmittance of thermochromic VO2 thin film patterned by SiO2 nanospheres

NASA Astrophysics Data System (ADS)

Zhou, Liwei; Liang, Jiran; Hu, Ming; Li, Peng; Song, Xiaolong; Zhao, Yirui; Qiang, Xiaoyong

2017-05-01

In this study, an ordered SiO2 nanosphere array coated with vanadium dioxide (VO2) has been fabricated to enhance transmittance with the potential application as an energy-efficient coating in the field of smart windows. SiO2 arrays were formed using the methods of self-assembly, and VO2 thin films were prepared by rapid thermal annealing (RTA) of sputtered vanadium films. VO2@SiO2 arrays were characterized by scanning electron microscopy, X-ray diffraction, a four-point probe, and UV-vis-NIR spectrophotometry. Compared with the planar films, the films deposited on 300 nm diameter SiO2 nanospheres can offer approximately 18% enhancement of luminous transmission (Tlum) because the diameter is smaller than the given wavelength and the protuberance of the surface array behaves as a gradation of refractive index producing antireflection. The solar regulation efficiency was not much deteriorated.

Imaging metal-like monoclinic phase stabilized by surface coordination effect in vanadium dioxide nanobeam

PubMed Central

Li, Zejun; Wu, Jiajing; Hu, Zhenpeng; Lin, Yue; Chen, Qi; Guo, Yuqiao; Liu, Yuhua; Zhao, Yingcheng; Peng, Jing; Chu, Wangsheng; Wu, Changzheng; Xie, Yi

2017-01-01

In correlated systems, intermediate states usually appear transiently across phase transitions even at the femtosecond scale. It therefore remains an open question how to determine these intermediate states—a critical issue for understanding the origin of their correlated behaviour. Here we report a surface coordination route to successfully stabilize and directly image an intermediate state in the metal-insulator transition of vanadium dioxide. As a prototype metal-insulator transition material, we capture an unusual metal-like monoclinic phase at room temperature that has long been predicted. Coordinate bonding of L-ascorbic acid molecules with vanadium dioxide nanobeams induces charge-carrier density reorganization and stabilizes metallic monoclinic vanadium dioxide, unravelling orbital-selective Mott correlation for gap opening of the vanadium dioxide metal–insulator transition. Our study contributes to completing phase-evolution pathways in the metal-insulator transition process, and we anticipate that coordination chemistry may be a powerful tool for engineering properties of low-dimensional correlated solids. PMID:28613281

Plasmonic Structures for CMOS Photonics and Control of Spontaneous Emission

DTIC Science & Technology

2013-04-01

structures; v) developed CMOS Si photonic switching device based on the vanadium dioxide ( VO2 ) phase transition. vi) also engaged in a partnership with...CMOS Si photonic switching device based on the vanadium dioxide ( VO2 ) phase transition. vii. exploring approaches to enhance spontaneous emission in...size and bandwidth, we are exploring phase-change materials and, in particular, vanadium dioxide. VO2 undergoes an insulator-to-metal phase transition

Exploratory Phase Transition-Based Switches Using Functional Oxides

DTIC Science & Technology

2011-02-02

TECHNICAL REPORT Abstract Vanadium dioxide ( VO2 ) undergoes a sharp metal-insulator transition (MIT) in the vicinity of room temperature and there is...18 The mechanisms governing metal-insulator transition (MIT) in vanadium dioxide ( VO2 ) is an intensively explored subject in condensed matter...textured vanadium dioxide films were grown on single crystal Al2O3 (0001) substrates by RF-sputtering from a VO2 target (99.5%, AJA International Inc

Multifunctional overcoats on vanadium dioxide thermochromic thin films with enhanced luminous transmission and solar modulation, hydrophobicity and anti-oxidation

NASA Astrophysics Data System (ADS)

Liu, Chang; Wang, Ning; Long, Yi

2013-10-01

Vanadium dioxide (VO2) has a great potential to be utilized as solar energy switching glazing, even though there exist some intrinsic problems of low luminous transmittance (Tlum) and poor oxidation resistance. Si-Al based anti-reflection (AR) sol-gel coatings processed at low temperature have been developed to tackle these issues assisted by adjusting ramping rate and annealing temperature. Si-Al based AR coating gives large relative enhancement on the transmittance (22% for Tlum, 14% for the whole solar spectrum Tsol,) and successfully maintains IR contrast at 2500 nm wavelength with 18% relative increase in solar modulation (ΔTsol). The optimized Si-Al based AR coating annealing conditions are recorded at 3 °C/min ramping rate and 100 °C annealing temperature. Fluorinated-Si based gel offers a new direction of multifunctional overcoat on thermochromic smart windows with hydrophobicity (contact angle 111°), averaged 14% relatively increased luminous transmittance and enhanced oxidation resistance.

Attosecond transient absorption instrumentation for thin film materials: Phase transitions, heat dissipation, signal stabilization, timing correction, and rapid sample rotation.

PubMed

Jager, Marieke F; Ott, Christian; Kaplan, Christopher J; Kraus, Peter M; Neumark, Daniel M; Leone, Stephen R

2018-01-01

We present an extreme ultraviolet (XUV) transient absorption apparatus tailored to attosecond and femtosecond measurements on bulk solid-state thin-film samples, specifically when the sample dynamics are sensitive to heating effects. The setup combines methodology for stabilizing sub-femtosecond time-resolution measurements over 48 h and techniques for mitigating heat buildup in temperature-dependent samples. Single-point beam stabilization in pump and probe arms and periodic time-zero reference measurements are described for accurate timing and stabilization. A hollow-shaft motor configuration for rapid sample rotation, raster scanning capability, and additional diagnostics are described for heat mitigation. Heat transfer simulations performed using a finite element analysis allow comparison of sample rotation and traditional raster scanning techniques for 100 Hz pulsed laser measurements on vanadium dioxide, a material that undergoes an insulator-to-metal transition at a modest temperature of 340 K. Experimental results are presented confirming that the vanadium dioxide (VO 2 ) sample cannot cool below its phase transition temperature between laser pulses without rapid rotation, in agreement with the simulations. The findings indicate the stringent conditions required to perform rigorous broadband XUV time-resolved absorption measurements on bulk solid-state samples, particularly those with temperature sensitivity, and elucidate a clear methodology to perform them.

Attosecond transient absorption instrumentation for thin film materials: Phase transitions, heat dissipation, signal stabilization, timing correction, and rapid sample rotation

NASA Astrophysics Data System (ADS)

Jager, Marieke F.; Ott, Christian; Kaplan, Christopher J.; Kraus, Peter M.; Neumark, Daniel M.; Leone, Stephen R.

2018-01-01

We present an extreme ultraviolet (XUV) transient absorption apparatus tailored to attosecond and femtosecond measurements on bulk solid-state thin-film samples, specifically when the sample dynamics are sensitive to heating effects. The setup combines methodology for stabilizing sub-femtosecond time-resolution measurements over 48 h and techniques for mitigating heat buildup in temperature-dependent samples. Single-point beam stabilization in pump and probe arms and periodic time-zero reference measurements are described for accurate timing and stabilization. A hollow-shaft motor configuration for rapid sample rotation, raster scanning capability, and additional diagnostics are described for heat mitigation. Heat transfer simulations performed using a finite element analysis allow comparison of sample rotation and traditional raster scanning techniques for 100 Hz pulsed laser measurements on vanadium dioxide, a material that undergoes an insulator-to-metal transition at a modest temperature of 340 K. Experimental results are presented confirming that the vanadium dioxide (VO2) sample cannot cool below its phase transition temperature between laser pulses without rapid rotation, in agreement with the simulations. The findings indicate the stringent conditions required to perform rigorous broadband XUV time-resolved absorption measurements on bulk solid-state samples, particularly those with temperature sensitivity, and elucidate a clear methodology to perform them.

Fabrication of vanadium dioxide polycrystalline films with higher temperature coefficient of resistance

NASA Astrophysics Data System (ADS)

Li, Jinhua; Yuan, Ningyi; Jiang, Meiping; Kun, Li

2011-08-01

Vanadium Dioxide Polycrystalline Films with High Temperature Coefficient of Resistance(TCR) were fabricated by modified Ion Beam Enhanced Deposition(IBED) method. The TCR of the Un-doping VO2 was about -4%/K at room temperature after appropriate thermal annealing. The XRD results clearly showed that IBED polycrystalline VO2 films had a single [002] orientation of VO2(M). The TCR of 5at.%W and 7at.% Ta doped Vanadium Dioxide Polycrystalline Films were high up to -18%/K and -12%/K at room temperature, respectively. Using 7at.% Ta and 2at.% Ti co-doping, the TCR of the co-doped vanadium oxide film was -7%/K and without hysteresis during temperature increasing and decresing from 0-80°C. It should indicate that the W-doped vanadium dioxide films colud be used for high sensing IR detect and the Ta/Ti co-doped film without hysteresis is suitable for infrarid imaging application.

Suspended sub-50 nm vanadium dioxide membrane transistors: fabrication and ionic liquid gating studies

NASA Astrophysics Data System (ADS)

Sim, Jai S.; Zhou, You; Ramanathan, Shriram

2012-10-01

We demonstrate a robust lithographic patterning method to fabricate self-supported sub-50 nm VO2 membranes that undergo a phase transition. Utilizing such self-supported membranes, we directly observed a shift in the metal-insulator transition temperature arising from stress relaxation and consistent opening of the hysteresis. Electric double layer transistors were then fabricated with the membranes and compared to thin film devices. The ionic liquid allowed reversible modulation of channel resistance and distinguishing bulk processes from the surface effects. From the shift in the metal-insulator transition temperature, the carrier density doped through electrolyte gating is estimated to be 1 × 1020 cm-3. Hydrogen annealing studies showed little difference in resistivity between the film and the membrane indicating rapid diffusion of hydrogen in the vanadium oxide rutile lattice consistent with previous observations. The ability to fabricate electrically-wired, suspended VO2 ultra-thin membranes creates new opportunities to study mesoscopic size effects on phase transitions and may also be of interest in sensor devices.

Effect of annealing temperature on thermochromic properties of vanadium dioxide thin films deposited by organic sol-gel method

NASA Astrophysics Data System (ADS)

Wu, Jing; Huang, Wanxia; Shi, Qiwu; Cai, Jinghan; Zhao, Dong; Zhang, Yubo; Yan, Jiazhen

2013-03-01

This paper described the synthesis of vanadium dioxide (VO2) thin films on mica substrates with different annealing temperatures by an organic sol-gel method. We performed X-ray diffraction, scanning electron microscope and optical transmission measurements to investigate the effect of the annealing temperature on the crystalline structure, morphology, and phase transition properties of these films. The results showed that a polycrystalline structure with high crystallinity and compact surface at the annealing temperature of 500 °C. The film exhibited a V6O13 phase and a flat surface with small grain size at 440 °C. By contrast, the VnO2n-1 appeared when the annealing temperature at 540 °C, and the film surface split into segregation of spherical grain and aggregates of continuously dendritic particles. Accordingly, the optimal annealing temperature was 500 °C using the organic sol-gel method. And it turned out that the films mainly contained VO2 (M) phase at room temperature with high content of V4+ valence. Particularly, the films showed different changes in the infrared transmittance and hysteresis width during the phase transition. The largest transformation of the infrared transmittance before and after MIT was 73%, while the narrowest temperature hysteresis width was 8 °C at 500 °C.

Infrared characteristics of VO2 thin films for smart window and laser protection applications

NASA Astrophysics Data System (ADS)

Huang, Zhangli; Chen, Sihai; Lv, Chaohong; Huang, Ying; Lai, Jianjun

2012-11-01

Vanadium dioxide (VO2) films with a low semiconductor-to-metal transition temperature of 45 °C were fabricated through direct current magnetron sputtering followed by a post-annealing. Atomic force microscopy measurements show that the VO2 grain size is about one hundred of nanometers. Infrared (IR) characteristic is well investigated by applying a He-Ne laser power intensity measurement, and the result reveals that the VO2 film exhibits excellent IR switching property. Furthermore, solar smart window and laser protection experiments demonstrate that the obtained VO2 thin film is a promising material for the application in related fields.

Dynamically Switching the Polarization State of Light Based on the Phase Transition of Vanadium Dioxide

NASA Astrophysics Data System (ADS)

Jia, Zhi-Yong; Shu, Fang-Zhou; Gao, Ya-Jun; Cheng, Feng; Peng, Ru-Wen; Fan, Ren-Hao; Liu, Yongmin; Wang, Mu

2018-03-01

There have been great endeavors devoted to manipulating the polarization state of light by plasmonic nanostructures in recent decades. However, the topic of active polarizers has attracted much less attention. We present a composite plasmonic nanostructure consisting of vanadium dioxide that can dynamically modulate the polarization state of the reflected light through a thermally induced phase transition of vanadium dioxide. We design a system consisting of anisotropic plasmonic nanostructures with vanadium dioxide that exhibits distinct reflections subjected to different linearly polarized incidence at room temperature and in the heated state. Under a particular linearly polarized incidence, the polarization state of the reflected light changes at room temperature, and reverts to its original polarization state above the phase-transition temperature. The composite structure can also be used to realize a dynamically switchable infrared image, wherein a pattern can be visualized at room temperature while it disappears above the phase-transition temperature. The composite structure could be potentially used for versatile optical modulators, molecular detection, and polarimetric imaging.

Electron Microscopy Characterization of Vanadium Dioxide Thin Films and Nanoparticles

NASA Astrophysics Data System (ADS)

Rivera, Felipe

Vanadium dioxide (VO_2) is a material of particular interest due to its exhibited metal to insulator phase transition at 68°C that is accompanied by an abrupt and significant change in its electronic and optical properties. Since this material can exhibit a reversible drop in resistivity of up to five orders of magnitude and a reversible drop in infrared optical transmission of up to 80%, this material holds promise in several technological applications. Solid phase crystallization of VO_2 thin films was obtained by a post-deposition annealing process of a VO_{x,x approx 2} amorphous film sputtered on an amorphous silicon dioxide (SiO_2) layer. Scanning electron microscopy (SEM) and electron-backscattered diffraction (EBSD) were utilized to study the morphology of the solid phase crystallization that resulted from this post-deposition annealing process. The annealing parameters ranged in temperature from 300°C up to 1000°C and in time from 5 minutes up to 12 hours. Depending on the annealing parameters, EBSD showed that this process yielded polycrystalline vanadium dioxide thin films, semi-continuous thin films, and films of isolated single-crystal particles. In addition to these films on SiO_2, other VO_2 thin films were deposited onto a-, c-, and r-cuts of sapphire and on TiO_2(001) heated single-crystal substrates by pulsed-laser deposition (PLD). The temperature of the substrates was kept at ˜500°C during deposition. EBSD maps and orientation imaging microscopy were used to study the epitaxy and orientation of the VO_2 grains deposited on the single crystal substrates, as well as on the amorphous SiO_2 layer. The EBSD/OIM results showed that: 1) For all the sapphire substrates analyzed, there is a predominant family of crystallographic relationships wherein the rutile VO_2{001} planes tend to lie parallel to the sapphire's {10-10} and the rutile VO_2{100} planes lie parallel to the sapphire's {1-210} and {0001}. Furthermore, while this family of relationships accounts for the majority of the VO_2 grains observed, due to the sapphire substrate's geometry there were variations within these rules that changed the orientation of VO_2 grains with respect to the substrate's normal direction. 2) For the TiO_2, a substrate with a lower lattice mismatch, we observe the expected relationship where the rutile VO_2 [100], [110], and [001] crystal directions lie parallel to the TiO_2 substrate's [100], [110], and [001] crystal directions respectively. 3) For the amorphous SiO_2 layer, all VO_2 crystals that were measurable (those that grew to the thickness of the deposited film) had a preferred orientation with the the rutile VO_2[001] crystal direction tending to lie parallel to the plane of the specimen. The use of transmission electron microscopy (TEM) is presented as a tool for further characterization studies of this material and its applications. In this work TEM diffraction patterns taken from cross-sections of particles of the a- and r-cut sapphire substrates not only solidified the predominant family mentioned, but also helped lift the ambiguity present in the rutile VO_2{100} axes. Finally, a focused-ion beam technique for preparation of cross-sectional TEM samples of metallic thin films deposited on polymer substrates is demonstrated.

Equivalent circuit for VO{sub 2} phase change material film in reconfigurable frequency selective surfaces

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sanphuang, Varittha; Ghalichechian, Nima; Nahar, Niru K.

We developed equivalent circuits of phase change materials based on vanadium dioxide (VO{sub 2}) thin films. These circuits are used to model VO{sub 2} thin films for reconfigurable frequency selective surfaces (FSSs). This is important as it provides a way for designing complex structures. A reconfigurable FSS filter using VO{sub 2} ON/OFF switches is designed demonstrating −60 dB isolation between the states. This filter is used to provide the transmission and reflection responses of the FSS in the frequency range of 0.1–0.6 THz. The comparison between equivalent circuit and full-wave simulation shows excellent agreement.

Amorphous and Crystalline Vanadium Oxides as High-Energy and High-Power Cathodes for Three-Dimensional Thin-Film Lithium Ion Batteries.

PubMed

Mattelaer, Felix; Geryl, Kobe; Rampelberg, Geert; Dendooven, Jolien; Detavernier, Christophe

2017-04-19

Flexible wearable electronics and on-chip energy storage for wireless sensors drive rechargeable batteries toward thin-film lithium ion batteries. To enable more charge storage on a given surface, higher energy density materials are required, while faster energy storage and release can be obtained by going to thinner films. Vanadium oxides have been examined as cathodes in classical and thin-film lithium ion batteries for decades, but amorphous vanadium oxide thin films have been mostly discarded. Here, we investigate the use of atomic layer deposition, which enables electrode deposition on complex three-dimensional (3D) battery architectures, to obtain both amorphous and crystalline VO 2 and V 2 O 5 , and we evaluate their thin-film cathode performance. Very high volumetric capacities are found, alongside excellent kinetics and good cycling stability. Better kinetics and higher volumetric capacities were observed for the amorphous vanadium oxides compared to their crystalline counterparts. The conformal deposition of these vanadium oxides on silicon micropillar structures is demonstrated. This study shows the promising potential of these atomic layer deposited vanadium oxides as cathodes for 3D all-solid-state thin-film lithium ion batteries.

Phase transition in bulk single crystals and thin films of V O 2 by nanoscale infrared spectroscopy and imaging

DOE PAGES

Liu, Mengkun; Sternbach, Aaron J.; Wagner, Martin; ...

2015-06-29

We have systematically studied a variety of vanadium dioxide (VO 2) crystalline forms, including bulk single crystals and oriented thin films, using infrared (IR) near-field spectroscopic imaging techniques. By measuring the IR spectroscopic responses of electrons and phonons in VO 2 with sub-grain-size spatial resolution (~20nm), we show that epitaxial strain in VO 2 thin films not only triggers spontaneous local phase separations, but leads to intermediate electronic and lattice states that are intrinsically different from those found in bulk. Generalized rules of strain- and symmetry-dependent mesoscopic phase inhomogeneity are also discussed. Furthermore, these results set the stage for amore » comprehensive understanding of complex energy landscapes that may not be readily determined by macroscopic approaches.« less

Using a Semiconductor-to-Metal Transition to Control Optical Transmission through Subwavelength Hole Arrays

DOE PAGES

Donev, E. U.; Suh, J. Y.; Lopez, R.; ...

2008-01-01

We describe a simple configuration in which the extraordinary optical transmission effect through subwavelength hole arrays in noble-metal films can be switched by the semiconductor-to-metal transition in an underlying thin film of vanadium dioxide. In these experiments, the transition is brought about by thermal heating of the bilayer film. The surprising reverse hysteretic behavior of the transmission through the subwavelength holes in the vanadium oxide suggest that this modulation is accomplished by a dielectric-matching condition rather than plasmon coupling through the bilayer film. The results of this switching, including the wavelength dependence, are qualitatively reproduced by a transfer matrix model.more » The prospects for effecting a similar modulation on a much faster time scale by using ultrafast laser pulses to trigger the semiconductor-to-metal transition are also discussed.« less

Tunable Bragg filters with a phase transition material defect layer

DOE PAGES

Wang, Xi; Gong, Zilun; Dong, Kaichen; ...

2016-01-01

We propose an all-solid-state tunable Bragg filter with a phase transition material as the defect layer. Bragg filters based on a vanadium dioxide defect layer sandwiched between silicon dioxide/titanium dioxide Bragg gratings are experimentally demonstrated. Temperature dependent reflection spectroscopy shows the dynamic tunability and hysteresis properties of the Bragg filter. Temperature dependent Raman spectroscopy reveals the connection between the tunability and the phase transition of the vanadium dioxide defect layer. This work paves a new avenue in tunable Bragg filter designs and promises more applications by combining phase transition materials and optical cavities.

Tunable Bragg filters with a phase transition material defect layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xi; Gong, Zilun; Dong, Kaichen

We propose an all-solid-state tunable Bragg filter with a phase transition material as the defect layer. Bragg filters based on a vanadium dioxide defect layer sandwiched between silicon dioxide/titanium dioxide Bragg gratings are experimentally demonstrated. Temperature dependent reflection spectroscopy shows the dynamic tunability and hysteresis properties of the Bragg filter. Temperature dependent Raman spectroscopy reveals the connection between the tunability and the phase transition of the vanadium dioxide defect layer. This work paves a new avenue in tunable Bragg filter designs and promises more applications by combining phase transition materials and optical cavities.

Naturally formed ultrathin V2O5 heteroepitaxial layer on VO2/sapphire(001) film

NASA Astrophysics Data System (ADS)

Littlejohn, Aaron J.; Yang, Yunbo; Lu, Zonghuan; Shin, Eunsung; Pan, KuanChang; Subramanyam, Guru; Vasilyev, Vladimir; Leedy, Kevin; Quach, Tony; Lu, Toh-Ming; Wang, Gwo-Ching

2017-10-01

Vanadium dioxide (VO2) and vanadium pentoxide (V2O5) thin films change their properties in response to external stimuli such as photons, temperature, electric field and magnetic field and have applications in electronics, optical devices, and sensors. Due to the multiple valence states of V and non-stoichiometry in thin films, it is challenging to grow epitaxial, single-phase V-oxide on a substrate, or a heterostructure of two epitaxial V-oxides. We report the formation of a heterostructure consisting of a few nm thick ultrathin V2O5 epitaxial layer on pulsed laser deposited tens of nm thick epitaxial VO2 thin films grown on single crystal Al2O3(001) substrates without post annealing of the VO2 film. The simultaneous observation of the ultrathin epitaxial V2O5 layer and VO2 epitaxial film is only possible by our unique reflection high energy electron diffraction pole figure analysis. The out-of-plane and in-plane epitaxial relationships are V2O5[100]||VO2[010]||Al2O3[001] and V2O5[03 2 bar ]||VO2[100]||Al2O3[1 1 bar 0], respectively. The existence of the V2O5 layer on the surface of the VO2 film is also supported by X-ray photoelectron spectroscopy and Raman spectroscopy.

Electrical and Infrared Optical Properties of Vanadium Oxide Semiconducting Thin-Film Thermometers

NASA Astrophysics Data System (ADS)

Zia, Muhammad Fakhar; Abdel-Rahman, Mohamed; Alduraibi, Mohammad; Ilahi, Bouraoui; Awad, Ehab; Majzoub, Sohaib

2017-10-01

A synthesis method has been developed for preparation of vanadium oxide thermometer thin film for microbolometer application. The structure presented is a 95-nm thin film prepared by sputter-depositing nine alternating multilayer thin films of vanadium pentoxide (V2O5) with thickness of 15 nm and vanadium with thickness of 5 nm followed by postdeposition annealing at 300°C in nitrogen (N2) and oxygen (O2) atmospheres. The resulting vanadium oxide (V x O y ) thermometer thin films exhibited temperature coefficient of resistance (TCR) of -3.55%/°C with room-temperature resistivity of 2.68 Ω cm for structures annealed in N2 atmosphere, and TCR of -3.06%/°C with room-temperature resistivity of 0.84 Ω cm for structures annealed in O2 atmosphere. Furthermore, optical measurements of N2- and O2-annealed samples were performed by Fourier-transform infrared ellipsometry to determine their dispersion curves, refractive index ( n), and extinction coefficient ( k) at wavelength from 7000 nm to 14,000 nm. The results indicate the possibility of applying the developed materials in thermometers for microbolometers.

Vanadium dioxide based frequency tunable metasurface filters for realizing reconfigurable terahertz optical phase and polarization control.

PubMed

Nouman, M Tayyab; Hwang, Ji Hyun; Faiyaz, Mohd; Lee, Kye-Jeong; Noh, Do-Young; Jang, Jae-Hyung

2018-05-14

Metasurfaces are two dimensional arrays of artificial subwavelength resonators, which can manipulate the amplitude and phase profile of incident electromagnetic fields. To date, limited progress has been achieved in realizing reconfigurable phase control of incident waves using metasurfaces. Here, an active metasurface is presented, whose resonance frequency can be tuned by employing insulator to metal transition in vanadium dioxide. By virtue of the phase jump accompanied by the resonance frequency tuning, the proposed metasurface acts as a phase shifter at THz frequency. It is further demonstrated that by appropriately tailoring the anisotropy of the metasurface, the observed phase shift can be used to switch the transmitted polarization from circular to approximately linear. This work thus shows potential for reconfigurable phase and polarization control at THz frequencies using vanadium dioxide based frequency tunable metasurfaces.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

NASA Astrophysics Data System (ADS)

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; Kittiwatanakul, Salinporn; Tung, I.-Cheng; Zhu, Yi; Zhang, Jiawei; Bechtel, Hans A.; Martin, Michael C.; Carr, G. Lawrence; Lu, Jiwei; Wolf, Stuart A.; Wen, Haidan; Tao, Tiger H.; Liu, Mengkun

2017-10-01

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. In this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of Ti O2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in V O2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system are directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.

Controlling phase separation in vanadium dioxide thin films via substrate engineering

DOE PAGES

Gilbert Corder, Stephanie N.; Jiang, Jianjuan; Chen, Xinzhong; ...

2017-10-23

The strong electron-lattice interactions in correlated electron systems provide unique opportunities for altering the material properties with relative ease and flexibility. Here in this Rapid Communication, we use localized strain control via a focused-ion-beam patterning of TiO 2 substrates to demonstrate that one can selectively engineer the insulator-to-metal transition temperature, the fractional component of the insulating and metallic phases, and the degree of optical anisotropy down to the length scales of the intrinsic phase separation in VO 2 thin films without altering the quality of the films. The effects of localized strain control on the strongly correlated electron system aremore » directly visualized by state-of-the-art IR near-field imaging and spectroscopy techniques and x-ray microdiffraction measurements.« less

Effects of gamma irradiations on reactive pulsed laser deposited vanadium dioxide thin films

NASA Astrophysics Data System (ADS)

Madiba, I. G.; Émond, N.; Chaker, M.; Thema, F. T.; Tadadjeu, S. I.; Muller, U.; Zolliker, P.; Braun, A.; Kotsedi, L.; Maaza, M.

2017-07-01

Vanadium oxide films are considered suitable coatings for various applications such as thermal protective coating of small spacecrafts because of their thermochromic properties. While in outer space, such coating will be exposed to cosmic radiations which include γ-rays. To study the effect of these γ-rays on the coating properties, we have deposited vanadium dioxide (VO2) films on silicon substrates and subjected them to extensive γ-irradiations with typical doses encountered in space missions. The prevalent crystallographic phase after irradiation remains the monoclinic VO2 phase but the films preferential orientation shifts to lower angles due to the presence of disordered regions caused by radiations. Raman spectroscopy measurements also evidences that the VO2 structure is slightly affected by gamma irradiation. Indeed, increasing the gamma rays dose locally alters the crystalline and electronic structures of the films by modifying the V-V inter-dimer distance, which in turns favours the presence of the VO2 metallic phase. From the XPS measurements of V2p and O1s core level spectra, an oxidation of vanadium from V4+ towards V5+ is revealed. The data also reveal a hydroxylation upon irradiation which is corroborated by the vanishing of a low oxidation state peak near the Fermi energy in the valence band. Our observations suggest that gamma radiations induce the formation of Frenkel pairs. Moreover, THz transmission measurements show that the long range structure of VO2 remains intact after irradiation whilst the electrical measurements evidence that the coating resistivity decreases with gamma irradiation and that their transition temperature is slightly reduced for high gamma ray doses. Even though gamma rays are only one of the sources of radiations that are encountered in space environment, these results are very promising with regards to the potential of integration of such VO2 films as a protective coating for spacecrafts.

Insulating phases of vanadium dioxide are Mott-Hubbard insulators

DOE PAGES

Huffman, T. J.; Hendriks, C.; Walter, E. J.; ...

2017-02-15

Here, we present comprehensive broadband optical spectroscopy data on two insulating phases of vanadium dioxide (VO 2): monoclinic M 2 and triclinic. The main result of our work is that the energy gap and the electronic structure are essentially unaltered by the first-order structural phase transition between the M 2 and triclinic phases. Moreover, the optical interband features in the M 2 and triclinic phases are remarkably similar to those observed in the well-studied monoclinic M 1 insulating phase of VO 2. As the energy gap is insensitive to the different lattice structures of the three insulating phases, we rulemore » out vanadium-vanadium pairing (the Peierls component) as the dominant contributor to the opening of the gap. Rather, the energy gap arises primarily from intra-atomic Coulomb correlations.« less

The Influence of Vanadium Microalloying on the Production of Thin Slab Casting and Direct Rolled Steel Strip

NASA Astrophysics Data System (ADS)

Li, Yu; Milbourn, David

Vanadium microalloying is highly effective in high strength strip steels produced by thin slab casting and direct rolled process. Because of the high solubility of V(C,N) in austenite, vanadium is likely to remain in solution during casting, equalisation and rolling. Vanadium microalloyed steels have better hot ductility and are less prone to transverse cracking than niobium containing steels. Despite a coarse as-cast austenite grain size before rolling, significant grain refinement can be achieved in vanadium microalloyed steels by repeated recrystallization during rolling, resulting in a fine uniform ferrite microstructure in final strip. Almost all vanadium present in microalloyed steels is available to precipitate in ferrite as very fine particles, contributing to precipitation strengthening. Vanadium microalloyed steels show less sensitivity to rolling process variables and exhibit excellent combination of strength and toughness.

Orientation of Vanadium Dioxide Grains on Various Substrates

NASA Astrophysics Data System (ADS)

Rivera, Felipe; Davis, Robert; Vanfleet, Richard

2010-10-01

Crystalline vanadium dioxide VO2 experiences a fast and reversible semiconductor-to-metal structural phase transition near 68^oC. The changes exhibited during this phase transition comprise a well known change in resistivity of several orders of magnitude, as well as a significant drop in optical transmittance in the infrared. Due to the changes in these optical and electronic properties, vanadium dioxide shows promise as a material to be used in many applications ranging from thermochromic window coatings to optoelectronic devices. However, since there is a structural component to the phase transition of VO2, it is of interest to study the orientation of the crystalline grains deposited. Substrates such as glass, SiO2, Sapphire, and TiO2 have been used for the deposition of this material. We used orientation imaging microscopy to study and characterize the orientation of the grains deposited on several of these substrates. Here we present results on this study.

Switchable vanadium dioxide (VO2) metamaterials fabricated from tungsten doped vanadia-based colloidal nanocrystals

NASA Astrophysics Data System (ADS)

Paik, Taejong; Hong, Sung-Hoon; Gordon, Thomas; Gaulding, Ashley; Kagan, Cherie; Murray, Christopher

2013-03-01

We report the fabrication of thermochromic VO2-based metamaterials using solution-processable colloidal nanocrystals. Vanadium-based nanoparticles are prepared through a non-hydrolytic reaction, resulting in stable colloidal dispersions in solution. Thermochromic nanocrystalline VO2 thin-films are prepared via rapid thermal annealing of colloidal nanoparticles coated on a variety of substrates. Nanostructured VO2 can be patterned over large areas by nanoimprint lithography. Precise control of tungsten (W) doping concentration in colloidal nanoparticles enables tuning of the phase transition temperature of the nanocrystalline VO2 thin-films. W-doped VO2 films display a sharp temperature dependent phase transition, similar to the undoped VO2 film, but at lower temperatures tunable with the doping level. By sequential coating of doped VO2 with different doping concentrations, we fabricate ?smart? multi-layered VO2 films displaying multiple phase transition temperatures within a single structure, allowing for dynamic modulation of the metal-dielectric layered structure. The optical properties programmed into the layered structure are switchable with temperature, which provides additional degrees of freedom to design tunable optical metamaterials. This work is supported by the US Office of Naval Research Multidisciplinary University Research Initiative (MURI) program grant number ONR-N00014-10-1-0942.

Thermal aging effect of vanadyl acetylacetonate precursor for deposition of VO{sub 2} thin films with thermochromic properties

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yu, Jung-Hoon; Nam, Sang-Hun; Kim, Donguk

Highlights: • 7 day aged VO(acac){sub 2} sol shows enhanced adhesivity on the SiO{sub 2} compared with non-aged sol. • The aging process has significantly affected the morphologies of VO{sub 2} films. • From the FT-IR spectra, thermal aging process provides the deformation of precursor. • The metal insulator transition (MIT) efficiency (ΔT{sub at2000} {sub nm}) reached a maximum value of 51% at 7 day aging. • Thermal aging process could shorten the aging time of sol solution. - Abstract: Thermochromic properties of vanadium dioxide (VO{sub 2}) have been studied extensively due to their IR reflection applications in energy smartmore » windows. In this paper, we studied the optical switching property of VO{sub 2} thin film, depending on the thermal aging time of the vanadyl acetylacetonate (VO(acac){sub 2}) precursor. We found the alteration of the IR spectra of the precursor by tuning the aging time as well as heat treatments of the precursor. An aging effect of vanadium precursor directly affects the morphologies, optical switching property and crystallinity of VO{sub 2} films. The optimum condition was achieved at the 7 day aging time with metal insulator transition (MIT) efficiency of 50%.« less

[An in vitro study on toxic effect of vanadium-titanium-magnetite dust on alveolar macrophage in rabbits].

PubMed

Song, Y; Chen, Q; Guan, Y

1998-11-01

To study the toxic effect of vanadium-titanium-magnetite (VTM) dust on alveolar macrophage (AM) and its hazardous extent. Survival rates, morphology and function of AM were compared in rabbits exposed to dust of VTM, vanadium oxide, titanium dioxide and silica in various doses and length of time with in vitro cell culture and putamen membrane cover glass transmission electron microscopy, and changes in activities of lactic dehydrogenase (LDH) and acid phosphatase (ACP) in cell culture were measured. Exposure to all the four kinds of dust could lead to decrease in survival rate of AM, increase in activities of LDH and ACP in the cell culture, and changes in their morphology and function to the extent dependent on the nature of dust. Toxic effect of exposure to VTM dust was lower than that to vanadium oxide and silica, but higher than that to titanium dioxide, which had slight toxic effect.

Microstructures and thermochromic characteristics of VO2/AZO composite films

NASA Astrophysics Data System (ADS)

Xiao, Han; Li, Yi; Yuan, Wenrui; Fang, Baoying; Wang, Xiaohua; Hao, Rulong; Wu, Zhengyi; Xu, Tingting; Jiang, Wei; Chen, Peizu

2016-05-01

A vanadium dioxide (VO2) thin film was fabricated on a ZnO doped with Al (AZO) conductive glass by magnetron sputtering at room temperature followed by annealing under air atmosphere. The microstructures and optical properties of the thin film were studied. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. Compared to the VO2 film fabricated on soda-lime glass substrate through the same process and condition, the phase transition temperature of the VO2/AZO composite film was decreased by about 25 °C, thermal hysteresis width narrowed to 6 °C, the visible light transmittance was over 50%, the infrared transmittances before and after phase transition were 21% and 55%, respectively at 1500 nm.

Bidirectional current triggering in planar devices based on serially connected VO₂ thin films using 965 nm laser diode.

PubMed

Kim, Jihoon; Park, Kyongsoo; Kim, Bong-Jun; Lee, Yong Wook

2016-08-08

By incorporating a 965 nm laser diode, the bidirectional current triggering of up to 30 mA was demonstrated in a two-terminal planar device based on serially connected vanadium dioxide (VO₂) thin films grown by pulsed laser deposition. The bidirectional current triggering was realized by using the focused beams of laser pulses through the photo-thermally induced phase transition of VO₂. The transient responses of laser-triggered currents were also investigated when laser pulses excited the device at a variety of pulse widths and repetition rates of up to 4.0 Hz. A switching contrast between off- and on-state currents was obtained as ~8333, and rising and falling times were measured as ~39 and ~29 ms, respectively, for 50 ms laser pulses.

Growth control of the oxidation state in vanadium oxide thin films

DOE PAGES

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; ...

2014-12-05

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research, but also technological applications that utilize the subtle change in the physical properties originating from the metalinsulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V₂⁺²O₃, V⁺⁴O₂, and V₂⁺⁵O₅. A well pronounced MIT was only observed in VO₂ films grown in a very narrow range of oxygen partial pressure P(O₂). The films grown either in lower (< 10 mTorr) or higher P(O₂) (> 25 mTorr) result in V₂O₃ and V₂O₅ phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO₂ thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an 3 improved MIT behavior.« less

Growth control of the oxidation state in vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Lee, Shinbuhm; Meyer, Tricia L.; Park, Sungkyun; Egami, Takeshi; Lee, Ho Nyung

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase pure epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V2 + 3 O 3 , V + 4 O 2 , and V2 + 5 O 5 . A well pronounced MIT was only observed in VO2 films grown in a very narrow range of oxygen partial pressure P(O2). The films grown either in lower (<10 mTorr) or higher P(O2) (>25 mTorr) result in V2O3 and V2O5 phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO2 thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.

Growth control of the oxidation state in vanadium oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Shinbuhm; Meyer, Tricia L.; Lee, Ho Nyung, E-mail: hnlee@ornl.gov

2014-12-01

Precise control of the chemical valence or oxidation state of vanadium in vanadium oxide thin films is highly desirable for not only fundamental research but also technological applications that utilize the subtle change in the physical properties originating from the metal-insulator transition (MIT) near room temperature. However, due to the multivalent nature of vanadium and the lack of a good understanding on growth control of the oxidation state, stabilization of phase pure vanadium oxides with a single oxidation state is extremely challenging. Here, we systematically varied the growth conditions to clearly map out the growth window for preparing phase puremore » epitaxial vanadium oxides by pulsed laser deposition for providing a guideline to grow high quality thin films with well-defined oxidation states of V{sub 2}{sup +3}O{sub 3}, V{sup +4}O{sub 2}, and V{sub 2}{sup +5}O{sub 5}. A well pronounced MIT was only observed in VO{sub 2} films grown in a very narrow range of oxygen partial pressure P(O{sub 2}). The films grown either in lower (<10 mTorr) or higher P(O{sub 2}) (>25 mTorr) result in V{sub 2}O{sub 3} and V{sub 2}O{sub 5} phases, respectively, thereby suppressing the MIT for both cases. We have also found that the resistivity ratio before and after the MIT of VO{sub 2} thin films can be further enhanced by one order of magnitude when the films are further oxidized by post-annealing at a well-controlled oxidizing ambient. This result indicates that stabilizing vanadium into a single valence state has to compromise with insufficient oxidation of an as grown thin film and, thereby, a subsequent oxidation is required for an improved MIT behavior.« less

High Pressure Crystalline Structure and Resistance of Vanadium Dioxide to 13.5 GPa

NASA Astrophysics Data System (ADS)

Brady, Nathaniel; Appavoo, Kannatassen; Montgomery, Jeffery; Vohra, Yogesh; Haglund, Richard; Hilton, David

2013-03-01

We have investigated the insulator-to-metal transition in thin film vanadium dioxide as a function of pressure at ambient temperature using a designer diamond anvil cell (DAC). Four-point probe resistance measurements show a monotonic decrease over the entire pressure range studied with no significant discontinuity. High-pressure X-ray diffraction measurements observe an M1 (P21 / c) phase at 0 GPa, an M2 (C2/m) phase from 0.8 GPa to 1.1 GPa, and a reentrant M1 phase from 1.1 GPa to 13.5 GPa. Crystal refinement above 1.1 GPa shows a monotonically decreasing a, b and c lattice constants and a minimum in the monoclinic angle, β, near 8.5 +/-0.5 GPa. The atomic positions show that the first V-V nearest neighbor distance (d) decreases over the entire pressure range, the second nearest neighbor distance (s) increases until 5 GPa after which it is constant with s ~ f ~3.2 Å. The next most closely spaced V-V distance (f), which corresponds to V atoms in different unit cells, is approximately constant across the entire pressure range measured. NB and JM acknowledge support from the US Dept. Education GAANN Fellowship (P200A090143). KA and RH acknowledge support from the Office of Science, US Department of Energy (DE- FG02-01ER45916).

Consolidation and fabrication techniques for vanadium-20 w/o titanium /TV-20/

NASA Technical Reports Server (NTRS)

Burt, W. R.; Karasek, F. J.; Kramer, W. C.; Mayfield, R. M.; Mc Gowan, R. D.

1968-01-01

Tests of the mechanical properties, fuel compatibility, sodium corrosion and irradiation behavior were made for vanadium and vanadium alloy. Improved methods for consolidation and fabrication of bar, rod, sheet, and high-quality, small diameter, thin-wall tubing of vanadium-20 without titanium are reported.

Roles of strain and domain boundaries on the phase transition stability of VO2 thin films

NASA Astrophysics Data System (ADS)

Jian, Jie; Chen, Aiping; Chen, Youxing; Zhang, Xinghang; Wang, Haiyan

2017-10-01

The fundamental phase transition mechanism and the stability of the semiconductor-to-metal phase transition properties during multiple thermal cycles have been investigated on epitaxial vanadium dioxide (VO2) thin films via both ex situ heating and in situ heating by transmission electron microscopy (TEM). VO2 thin films were deposited on c-cut sapphire substrates by pulsed laser deposition. Ex situ studies show the broadening of transition sharpness (ΔT) and the width of thermal hysteresis (ΔH) after 60 cycles. In situ TEM heating studies reveal that during thermal cycles, large strain was accumulated around the domain boundaries, which was correlated with the phase transition induced lattice constant change and the thermal expansion. It suggests that the degradation of domain boundary structures in the VO2 films not only caused the transition property reduction (e.g., the decrease in ΔT and ΔH) but also played an important role in preventing the film from fracture during thermal cycles.

Epitaxial VO2 thin-film-based radio-frequency switches with electrical activation

NASA Astrophysics Data System (ADS)

Lee, Jaeseong; Lee, Daesu; Cho, Sang June; Seo, Jung-Hun; Liu, Dong; Eom, Chang-Beom; Ma, Zhenqiang

2017-09-01

Vanadium dioxide (VO2) is a correlated material exhibiting a sharp insulator-to-metal phase transition (IMT) caused by temperature change and/or bias voltage. We report on the demonstration of electrically triggered radio-frequency (RF) switches based on epitaxial VO2 thin films. The highly epitaxial VO2 and SnO2 template layer was grown on a (001) TiO2 substrate by pulsed laser deposition (PLD). A resistance change of the VO2 thin films of four orders of magnitude was achieved with a relatively low threshold voltage, as low as 13 V, for an IMT phase transition. VO2 RF switches also showed high-frequency responses of insertion losses of -3 dB at the on-state and return losses of -4.3 dB at the off-state over 27 GHz. Furthermore, an intrinsic cutoff frequency of 17.4 THz was estimated for the RF switches. The study on electrical IMT dynamics revealed a phase transition time of 840 ns.

Metal Insulator transition in Vanadium Dioxide

NASA Astrophysics Data System (ADS)

Jovaini, Azita; Fujita, Shigeji; Suzuki, Akira; Godoy, Salvador

2012-02-01

MAR12-2011-000262 Abstract Submitted for the MAR12 Meeting of The American Physical Society Sorting Category: 03.9 (T) On the metal-insulator-transition in vanadium dioxide AZITA JOVAINI, SHIGEJI FUJITA, University at Buffalo, SALVADOR GODOY, UNAM, AKIRA SUZUKI, Tokyo University of Science --- Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity _/ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop. Prefer Oral Session X Prefer .

Semiconductor-metal phase transition of vanadium dioxide nanostructures on silicon substrate: Applications for thermal control of spacecraft

DOE Office of Scientific and Technical Information (OSTI.GOV)

Leahu, G. L., E-mail: roberto.livoti@uniroma1.it; Li Voti, R., E-mail: roberto.livoti@uniroma1.it; Larciprete, M. C., E-mail: roberto.livoti@uniroma1.it

2014-06-19

We present a detailed infrared study of the semiconductor-to-metal transition (SMT) in a vanadium dioxide (VO2) film deposited on silicon wafer. The VO2 phase transition is studied in the mid-infrared (MIR) region by analyzing the transmittance and the reflectance measurements, and the calculated emissivity. The temperature behaviour of the emissivity during the SMT put into evidence the phenomenon of the anomalous absorption in VO2 which has been explained by applying the Maxwell Garnett effective medium approximation theory, together with a strong hysteresis phenomenon, both useful to design tunable thermal devices to be applied for the thermal control of spacecraft. Wemore » have also applied the photothermal radiometry in order to study the changes in the modulated emissivity induced by laser. Experimental results show how the use of these techniques represent a good tool for a quantitative measurement of the optothermal properties of vanadium dioxide based structures.« less

Enhanced Visible Transmittance of Thermochromic VO₂ Thin Films by SiO₂ Passivation Layer and Their Optical Characterization.

PubMed

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-07-09

This paper presents the preparation of high-quality vanadium dioxide (VO₂) thermochromic thin films with enhanced visible transmittance (T vis ) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO₂ thin films with high T vis and excellent optical switching efficiency (E os ) were successfully prepared by employing SiO₂ as a passivation layer. After SiO₂ deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO₂ coating, the phase transition temperature (T c ) of the prepared films was not affected. Compared with pristine VO₂, the total layer thickness after SiO₂ coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO₂ thin films showed a higher T vis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of T vis while maintaining high E os is meaningful for VO₂-based smart window applications.

Vanadium oxide thin films produced by magnetron sputtering from a V2O5 target at room temperature

NASA Astrophysics Data System (ADS)

de Castro, Marcelo S. B.; Ferreira, Carlos L.; de Avillez, Roberto R.

2013-09-01

Vanadium oxide thin films were grown by RF magnetron sputtering from a V2O5 target at room temperature, an alternative route of production of vanadium oxide thin films for infrared detector applications. The films were deposited on glass substrates, in an argon-oxygen atmosphere with an oxygen partial pressure from nominal 0% to 20% of the total pressure. X-ray diffraction (XRD) and X-ray photon spectroscopy (XPS) analyses showed that the films were a mixture of several vanadium oxides (V2O5, VO2, V5O9 and V2O3), which resulted in different colors, from yellow to black, depending on composition. The electrical resistivity varied from 1 mΩ cm to more than 500 Ω cm and the thermal coefficient of resistance (TCR), varied from -0.02 to -2.51% K-1. Computational thermodynamics was used to simulate the phase diagram of the vanadium-oxygen system. Even if plasma processes are far from equilibrium, this diagram provides the range of oxygen pressures that lead to the growth of different vanadium oxide phases. These conditions were used in the present work.

Intensity tunable infrared broadband absorbers based on VO2 phase transition using planar layered thin films

PubMed Central

Kocer, Hasan; Butun, Serkan; Palacios, Edgar; Liu, Zizhuo; Tongay, Sefaattin; Fu, Deyi; Wang, Kevin; Wu, Junqiao; Aydin, Koray

2015-01-01

Plasmonic and metamaterial based nano/micro-structured materials enable spectrally selective resonant absorption, where the resonant bandwidth and absorption intensity can be engineered by controlling the size and geometry of nanostructures. Here, we demonstrate a simple, lithography-free approach for obtaining a resonant and dynamically tunable broadband absorber based on vanadium dioxide (VO2) phase transition. Using planar layered thin film structures, where top layer is chosen to be an ultrathin (20 nm) VO2 film, we demonstrate broadband IR light absorption tuning (from ~90% to ~30% in measured absorption) over the entire mid-wavelength infrared spectrum. Our numerical and experimental results indicate that the bandwidth of the absorption bands can be controlled by changing the dielectric spacer layer thickness. Broadband tunable absorbers can find applications in absorption filters, thermal emitters, thermophotovoltaics and sensing. PMID:26294085

Effect of vanadium content on remanent polarization in bismuth titanate thin films prepared by liquid source misted chemical deposition

NASA Astrophysics Data System (ADS)

Kim, Tai Suk; Kim, Ki Woong; Jeon, Min Ku; Jung, Chang Hwa; Woo, Seong Ihl

2007-01-01

Bi4-x/3Ti3-xVxO12 (BTV) ferroelectric thin films were fabricated by liquid source misted chemical deposition. The substitution of vanadium for titanium site changed the crystalline orientation and surface morphology of the thin film, which in turn influenced the remanent polarization (Pr). 2Pr of BTV thin film increased with increase of vanadium content and reached a maximum value (21.5μC/cm2) at x =0.03, as this corresponded with the largest degree of a-axis orientation. However, at 0.05⩽x⩽0.09, 2Pr reduced with decrease in the degree of a-axis orientation. These results indicate that the Pr of the films is dependent on the degree of a-axis orientation.

VO.sub.2 precipitates for self-protected optical surfaces

DOEpatents

Gea, Laurence A.; Boatner, Lynn A.

1999-01-01

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al.sub.2 O.sub.3), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO.sub.2 precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al.sub.2 O.sub.3 host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at .about.77.degree. C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally "switchable" surface region on Al.sub.2 O.sub.3.

Nonlinear-optical properties of thick composite media with vanadium dioxide nanoparticles. II. Self-focusing of mid-IR radiation

NASA Astrophysics Data System (ADS)

Vinogradova, O. P.; Ostrosablina, A. A.; Sidorov, A. I.

2006-02-01

This paper presents the experimental and theoretical results of a study of the interaction of pulsed laser radiation with thick composite media containing nanoparticles of vanadium dioxide (VO2). It is established that the reversible semiconductor-metal phase transition that occurs in the VO2 nanoparticles under the action of radiation can produce self-focusing of the mid-IR radiation by the formation of a photoinduced dynamic lens. An analysis is carried out of how the radiation intensity affects the dynamics of the given process.

Investigation on the oxidation behavior of AlCrVxN thin films by means of synchrotron radiation and influence on the high temperature friction

NASA Astrophysics Data System (ADS)

Tillmann, Wolfgang; Kokalj, David; Stangier, Dominic; Paulus, Michael; Sternemann, Christian; Tolan, Metin

2018-01-01

Friction minimization is an important topic which is pursued in research and industry. In addition to the use of lubricants, friction-reducing oxide phases can be utilized which occur during. These oxides are called Magnéli phases and especially vanadium oxides exhibit good friction reducing properties. Thereby, the lubrication effect can be traced back to oxygen deficiencies. AlCrN thin films are being used as coatings for tools which have to withstand high temperatures. A further improvement of AlCrN thin films concerning their friction properties is possible by incorporation of vanadium. This study analyzes the temperature dependent oxidation behavior of magnetron sputtered AlCrVN thin films with different vanadium contents up to 13.5 at.-% by means of X-ray diffraction and X-ray absorption near-edge spectroscopy. Up to 400 °C the coatings show no oxidation. A higher temperature of 700 °C leads to an oxidation and formation of Magnéli phases of the coatings with vanadium contents above 10.7 at.-%. Friction coefficients, measured by ball-on-disk test are correlated with the oxide formation in order to figure out the effect of vanadium oxides. At 700 °C a decrease of the friction coefficient with increasing vanadium content can be observed, due to the formation of VO2, V2O3 and the Magnéli phase V4O7.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Ghosh, R.; Liu, Y.; Lopez, R.

2011-12-01

We report on local probe measurements of current-voltage and electrostatic force-voltage characteristics of electric-field-induced insulator to metal transition in VO2 thin film. In conducting AFM mode, switching from the insulating to metallic state occurs for electric-field threshold E˜6.5×107Vm-1 at 300K. Upon lifting the tip above the sample surface, we find that the transition can also be observed through a change in electrostatic force and in tunneling current. In this noncontact regime, the transition is characterized by random telegraphic noise. These results show that electric field alone is sufficient to induce the transition; however, the electronic current provides a positive feedback effect that amplifies the phenomena.

Reactions of vanadium dioxide molecules with acetylene: infrared spectra of VO2(η(2)-C2H2)(x) (x = 1, 2) and OV(OH)CCH in solid neon.

PubMed

Zhou, Xiaojie; Chen, Mohua; Zhou, Mingfei

2013-07-03

Reactions of vanadium dioxide molecules with acetylene have been studied by matrix isolation infrared spectroscopy. Reaction intermediates and products are identified on the basis of isotopic substitutions as well as density functional frequency calculations. Ground state vanadium dioxide molecule reacts with acetylene in forming the side-on-bonded VO2(η(2)-C2H2) and VO2(η(2)-C2H2)2 complexes spontaneously on annealing in solid neon. The VO2(η(2)-C2H2) complex is characterized to have a (2)B2 ground state with C2v symmetry, whereas the VO2(η(2)-C2H2)2 complex has a (2)A ground state with C2 symmetry. The VO2(η(2)-C2H2) and VO2(η(2)-C2H2)2 complexes are photosensitive. The VO2(η(2)-C2H2) complex rearranges to the OV(OH)CCH molecule upon UV-vis light excitation.

VO{sub 2} precipitates for self-protected optical surfaces

DOEpatents

Gea, L.A.; Boatner, L.A.

1999-03-23

A method for forming crystallographically coherent precipitates of vanadium dioxide in the near-surface region of sapphire and the resulting product is disclosed. Ions of vanadium and oxygen are stoichiometrically implanted into a sapphire substrate (Al{sub 2}O{sub 3}), and subsequently annealed to form vanadium dioxide precipitates in the substrate. The embedded VO{sub 2} precipitates, which are three-dimensionally oriented with respect to the crystal axes of the Al{sub 2}O{sub 3} host lattice, undergo a first-order monoclinic-to-tetragonal (and also semiconducting-to-metallic) phase transition at ca. 77 C. This transformation is accompanied by a significant variation in the optical transmission of the implanted region and results in the formation of an optically active, thermally ``switchable`` surface region on Al{sub 2}O{sub 3}. 5 figs.

Heterogeneous nucleation and growth dynamics in the light-induced phase transition in vanadium dioxide

DOE PAGES

Brady, Nathaniel F.; Appavoo, Kannatassen; Seo, Minah; ...

2016-03-02

Here we report on ultrafast optical investigations of the light-induced insulator-to-metal phase transition in vanadium dioxide with controlled disorder generated by substrate mismatch. These results reveal common dynamics of this optically-induced phase transition that are independent of this disorder. Lastly, above the fluence threshold for completing the transition to the rutile crystalline phase, we find a common time scale, independent of sample morphology, of 40.5 ± 2 ps that is consistent with nucleation and growth dynamics of the R phase from the parent M1 ground state.

Study of the resonant frequencies of silicon microcantilevers coated with vanadium dioxide films during the insulator-to-metal transition

NASA Astrophysics Data System (ADS)

Rúa, Armando; Fernández, Félix E.; Hines, Melissa A.; Sepúlveda, Nelson

2010-03-01

Vanadium dioxide (VO2) thin films were grown on silicon microcantilevers and companion test substrates by pulsed laser deposition followed by in situ annealing in an oxidizing atmosphere, with annealing times used to control crystallite sizes. Annealing times of 18 min produced VO2 films with average crystallite sizes of ˜10 nm or less, while those annealed for 35 min had crystallites of average size ˜90 nm, comparable to sample thickness. X-ray diffraction and x-ray photoelectron spectroscopy studies of the samples showed that films with crystallite sizes ˜40 nm or greater consisted of substoichiometric VO2 in its monoclinic phase, with preferential orientation with (011) planes parallel to the sample surface, while finer structured samples had a substantially similar composition, but showed no clear evidence of preferential orientation and were probably partially amorphous. Forced vibration experiments were performed with the cantilevers as they were thermally cycled through the VO2 insulator-to-metal transition (IMT). Very large reversible changes in the resonant frequencies of up to 5% (3.6 kHz) as well as hysteretic behavior were observed, which depend strongly on film crystallite size. The average value of Young's modulus for VO2 films with crystallite sizes of ˜90 nm was estimated from the mechanical resonance data at room temperature to be ˜120 GPa, but the large tensile stresses which develop between film and substrate through the IMT impede a similar determination for the VO2 tetragonal phase, since the commonly used relationships for cantilever frequencies derived from elasticity theory are not applicable for strongly curved composite beams. The results presented show that VO2 thin films can be useful in novel microscale and nanoscale electromechanical resonators in which effective stiffness can be tuned thermally or optically. This response can provide additional functionality to VO2—based devices which take advantage of other property changes through the IMT.

Radiation-based near-field thermal rectification with phase transition materials

NASA Astrophysics Data System (ADS)

Yang, Yue; Basu, Soumyadipta; Wang, Liping

2013-10-01

The capability of manipulating heat flow has promising applications in thermal management and thermal circuits. In this Letter, we report strong thermal rectification effect based on the near-field thermal radiation between silicon dioxide (SiO2) and a phase transition material, vanadium dioxide (VO2), separated by nanometer vacuum gaps under the framework of fluctuational electrodynamics. Strong coupling of surface phonon polaritons between SiO2 and insulating VO2 leads to enhanced near-field radiative transfer, which on the other hand is suppressed when VO2 becomes metallic, resulting in thermal rectification. The rectification factor is close to 1 when vacuum gap is at 1 μm and it increases to almost 2 at sub-20-nm gaps when emitter and receiver temperatures are set to 400 and 300 K, respectively. Replacing bulk SiO2 with a thin film of several nanometers, rectification factor of 3 can be achieved when the vacuum gap is around 100 nm.

Characterization of pulsed laser deposition grown V2O3 converted VO2

NASA Astrophysics Data System (ADS)

Majid, Suhail; Shukla, D. K.; Rahman, F.; Gautam, Kamini; Sathe, V. G.; Choudhary, R. J.; Phase, D. M.

2016-10-01

Controllable tuning of Metal-insulator transition in VxOy thin film has been a field of extensive research. However controlled synthesis of desired Vanadium oxide phase is a challenging task. We have successfully achieved VO2 phase on Silicon substrate after post deposition annealing treatment to the PLD grown as deposited V2O3 thin films. The annealed thin film was characterized by x-ray diffraction (XRD), resistivity, Raman spectroscopy, X-ray absorption spectroscopy (XAS) and X-ray photoelectron spectroscopy (XPS) measurements. XRD confirms the crystalline nature and growth of VO2 phase in thin film. The characteristic MIT was observed from resistivity measurements and transition temperature appeared at lower value around 336 K, compared to bulk VO2. The structural transition accompanied with MIT from lower temperature monoclinic phase to higher temperature Rutile phase became evident from temperature dependent Raman measurements. Chemical state of vanadium was examined using XAS and XPS measurements which confirm the presence of +4 oxidation state of vanadium in thin film.

Seedless Growth of Bismuth Nanowire Array via Vacuum Thermal Evaporation

PubMed Central

Liu, Mingzhao; Nam, Chang-Yong; Zhang, Lihua

2015-01-01

Here a seedless and template-free technique is demonstrated to scalably grow bismuth nanowires, through thermal evaporation in high vacuum at RT. Conventionally reserved for the fabrication of metal thin films, thermal evaporation deposits bismuth into an array of vertical single crystalline nanowires over a flat thin film of vanadium held at RT, which is freshly deposited by magnetron sputtering or thermal evaporation. By controlling the temperature of the growth substrate the length and width of the nanowires can be tuned over a wide range. Responsible for this novel technique is a previously unknown nanowire growth mechanism that roots in the mild porosity of the vanadium thin film. Infiltrated into the vanadium pores, the bismuth domains (~ 1 nm) carry excessive surface energy that suppresses their melting point and continuously expels them out of the vanadium matrix to form nanowires. This discovery demonstrates the feasibility of scalable vapor phase synthesis of high purity nanomaterials without using any catalysts. PMID:26709727

System Assessment of Carbon Dioxide Used as Gas Oxidant and Coolant in Vanadium-Extraction Converter

NASA Astrophysics Data System (ADS)

Du, Wei Tong; Wang, Yu; Liang, Xiao Ping

2017-10-01

With the aim of reducing carbon dioxide (CO2) emissions and of using waste resources in steel plants, the use of CO2 as a gas oxidant and coolant in the converter to increase productivity and energy efficiency was investigated in this study. Experiments were performed in combination with thermodynamic theory on vanadium-extraction with CO2 and oxygen (O2) mixed injections. The results indicate that the temperature of the hot metal bath decreased as the amount of CO2 introduced into O2 increased. At an injection of 85 vol.% O2 and 15 vol.% CO2, approximately 12% of additional carbon was retained in the hot metal. Moreover, the content of vanadium trioxide in the slag was higher. In addition, the O2 consumption per ton of hot metal was reduced by 8.5% and additional chemical energy was recovered by the controlled injection of CO2 into the converter. Therefore, using CO2 as a gas coolant was conducive to vanadium extraction, and O2 consumption was reduced.

Anisotropic vanadium dioxide sculptured thin films with superior thermochromic properties.

PubMed

Sun, Yaoming; Xiao, Xiudi; Xu, Gang; Dong, Guoping; Chai, Guanqi; Zhang, Hua; Liu, Pengyi; Zhu, Hanmin; Zhan, Yongjun

2013-09-25

VO2 (M) STF through reduction of V2O5 STF was prepared. The results illustrate that V2O5 STF can be successfully obtained by oblique angle thermal evaporation technique. After annealing at 550 °C/3 min, the V2O5 STF deposited at 85° can be easily transformed into VO2 STF with slanted columnar structure and superior thermochromic properties. After deposition SiO2 antireflective layer, Tlum of VO2 STF is enhanced 26% and ΔTsol increases 60% compared with that of normal VO2 thin films. Due to the anisotropic microstructure of VO2 STF, angular selectivity transmission of VO2 STF is observed and the solar modulation ability is further improved from 7.2% to 8.7% when light is along columnar direction. Moreover, the phase transition temperature of VO2 STF can be depressed into 54.5 °C without doping. Considering the oblique incidence of sunlight on windows, VO2 STF is more beneficial for practical application as smart windows compared with normal homogenous VO2 thin films.

Anisotropic vanadium dioxide sculptured thin films with superior thermochromic properties

PubMed Central

Sun, Yaoming; Xiao, Xiudi; Xu, Gang; Dong, Guoping; Chai, Guanqi; Zhang, Hua; Liu, Pengyi; Zhu, Hanmin; Zhan, Yongjun

2013-01-01

VO2 (M) STF through reduction of V2O5 STF was prepared. The results illustrate that V2O5 STF can be successfully obtained by oblique angle thermal evaporation technique. After annealing at 550°C/3 min, the V2O5 STF deposited at 85° can be easily transformed into VO2 STF with slanted columnar structure and superior thermochromic properties. After deposition SiO2 antireflective layer, Tlum of VO2 STF is enhanced 26% and ΔTsol increases 60% compared with that of normal VO2 thin films. Due to the anisotropic microstructure of VO2 STF, angular selectivity transmission of VO2 STF is observed and the solar modulation ability is further improved from 7.2% to 8.7% when light is along columnar direction. Moreover, the phase transition temperature of VO2 STF can be depressed into 54.5°C without doping. Considering the oblique incidence of sunlight on windows, VO2 STF is more beneficial for practical application as smart windows compared with normal homogenous VO2 thin films. PMID:24067743

Enhanced Visible Transmittance of Thermochromic VO2 Thin Films by SiO2 Passivation Layer and Their Optical Characterization

PubMed Central

Yu, Jung-Hoon; Nam, Sang-Hun; Lee, Ji Won; Boo, Jin-Hyo

2016-01-01

This paper presents the preparation of high-quality vanadium dioxide (VO2) thermochromic thin films with enhanced visible transmittance (Tvis) via radio frequency (RF) sputtering and plasma enhanced chemical vapor deposition (PECVD). VO2 thin films with high Tvis and excellent optical switching efficiency (Eos) were successfully prepared by employing SiO2 as a passivation layer. After SiO2 deposition, the roughness of the films was decreased 2-fold and a denser structure was formed. These morphological changes corresponded to the results of optical characterization including the haze, reflectance and absorption spectra. In spite of SiO2 coating, the phase transition temperature (Tc) of the prepared films was not affected. Compared with pristine VO2, the total layer thickness after SiO2 coating was 160 nm, which is an increase of 80 nm. Despite the thickness change, the VO2 thin films showed a higher Tvis value (λ 650 nm, 58%) compared with the pristine samples (λ 650 nm, 43%). This enhancement of Tvis while maintaining high Eos is meaningful for VO2-based smart window applications. PMID:28773679

Atomic Layer-Deposited Titanium-Doped Vanadium Oxide Thin Films and Their Thermistor Applications

DOE PAGES

Wang, Shuyu; Yu, Shifeng; Lu, Ming; ...

2016-11-30

In this paper, we report the enhancement in the temperature coefficient of resistance (TCR) of atomic layer-deposited vanadium oxide thin films through the doping of titanium oxide. The Hall effect measurement provides a potential explanation for the phenomenon. The composition and morphology of the thin films are investigated by x-ray diffraction and scanning electron microscopy techniques. The high TCR, good uniformity, and low processing temperature of the material make it a good candidate for thermistor application.

Spectrophotometric determination of vanadium in rutile and in mafic igneous rocks

USGS Publications Warehouse

Marinenko, John; Mei, Leung

1974-01-01

Minor and major levels of vanadium in rutile are separated from titanium and iron by sample fusion with sodium carbonate followed by water leach and filtration. The filtrate is then acidified with hydrochloric acid. Silicates are decomposed with a mixture of hydrofluoric and hydrochloric acids, and iron is separated by extraction of its chloride with diethyl ether. Sample vanadium in hydrochloric acid is then quantitatively reduced to vanadium(IV) with sulfurous acid. The remaining sulfur dioxide is expelled by heating. Vanadium (IV) then is reacted with excess of iron(III) at reduced acidity (pH 5) in the presence of 1,10-phenanthroline to yield the orange-red iron(II) 1,10-phenanthroline complex. Iron(II) generated by vanadium(IV) is a measure of total vanadium in the sample. The proposed method is free from elemental interferences because the color development cannot take place without the two redox reactions described above, and these are, under the outlined experimental conditions, quantitative only for vanadium.

Effect of the substrate on the insulator-metal transition of vanadium dioxide films

NASA Astrophysics Data System (ADS)

Kovács, György J.; Bürger, Danilo; Skorupa, Ilona; Reuther, Helfried; Heller, René; Schmidt, Heidemarie

2011-03-01

Single-phase vanadium dioxide films grown on (0001) sapphire and (001) silicon substrates show a very different insulator-metal electronic transition. A detailed description of the growth mechanisms and the substrate-film interaction is given, and the characteristics of the electronic transition are described by the morphology and grain boundary structure. (Tri-)epitaxy-stabilized columnar growth of VO2 takes place on the sapphire substrate, whereas on silicon the expected Zone II growth is identified. We have found that in the case of the Si substrate the reasons for the broader hysteresis and the lower switching amplitude are the formation of an amorphous insulating VOx (x > 2.6) phase coexisting with VO2 and the high vanadium vacancy concentration of the VO2. These phenomena are the result of the excess oxygen during the growth and the interaction between the silicon substrate and the growing film.

Linking Precursor Alterations to Nanoscale Structure and Optical Transparency in Polymer Assisted Fast-Rate Dip-Coating of Vanadium Oxide Thin Films

PubMed Central

Glynn, Colm; Creedon, Donal; Geaney, Hugh; Armstrong, Eileen; Collins, Timothy; Morris, Michael A.; Dwyer, Colm O’

2015-01-01

Solution processed metal oxide thin films are important for modern optoelectronic devices ranging from thin film transistors to photovoltaics and for functional optical coatings. Solution processed techniques such as dip-coating, allow thin films to be rapidly deposited over a large range of surfaces including curved, flexible or plastic substrates without extensive processing of comparative vapour or physical deposition methods. To increase the effectiveness and versatility of dip-coated thin films, alterations to commonly used precursors can be made that facilitate controlled thin film deposition. The effects of polymer assisted deposition and changes in solvent-alkoxide dilution on the morphology, structure, optoelectronic properties and crystallinity of vanadium pentoxide thin films was studied using a dip-coating method using a substrate withdrawal speed within the fast-rate draining regime. The formation of sub-100 nm thin films could be achieved rapidly from dilute alkoxide based precursor solutions with high optical transmission in the visible, linked to the phase and film structure. The effects of the polymer addition was shown to change the crystallized vanadium pentoxide thin films from a granular surface structure to a polycrystalline structure composed of a high density of smaller in-plane grains, resulting in a uniform surface morphology with lower thickness and roughness. PMID:26123117

Plasma assisted facile synthesis of vanadium oxide (V3O7) nanostructured thin films

NASA Astrophysics Data System (ADS)

Singh, Megha; Saini, Sujit K.; Kumar, Prabhat; Sharma, Rabindar K.; Reddy, G. B.

2018-05-01

Vanadium oxides nanostructured thin films are synthesized using plasma assisted sublimation process. The effect of temperatures on growth of V2O5 and V3O7 thin films is studied. Scanning electron micrographs shows different morphologies are obtained at different temperatures i.e. at 450 °C nano cubes-like structures are obtained, whereas at 550 °C and 650 °C nanorods are obtained. Sample deposited at 450 °C is entirely composed of V2O5 and sample at higher temperatures are composed of mixed phase of vanadium oxides i.e. V2O5 and V3O7. As temperature increased, so the content of V3O7 in the sample is increased as confirmed by XRD and Raman analyses.

Reduction of Vanadium Oxide (VOx) under High Vacuum Conditions as Investigated by X-Ray Photoelectron Spectroscopy

NASA Astrophysics Data System (ADS)

Chourasia, A.

2015-03-01

Vanadium oxide thin films were formed by depositing thin films of vanadium on quartz substrates and oxidizing them in an atmosphere of oxygen. The deposition was done by the e-beam technique. The oxide films were annealed at different temperatures for different times under high vacuum conditions. The technique of x-ray photoelectron spectroscopy has been employed to study the changes in the oxidation states of vanadium and oxygen in such films. The spectral features in the vanadium 2p, oxygen 1s, and the x-ray excited Auger regions were investigated. The Auger parameter has been utilized to study the changes. The complete oxidation of elemental vanadium to V2O5 was observed to occur at 700°C. At any other temperature, a mixture of oxides consisting of V2O5 and VO2 was observed in the films. Annealing of the films resulted in the gradual loss of oxygen followed by reduction in the oxidation state from +5 to 0. The reduction was observed to depend upon the annealing temperature and the annealing time. Organized Research, TAMU-Commerce.

Correlation of plume dynamics and oxygen pressure with VO2 stoichiometry during pulsed laser deposition

NASA Astrophysics Data System (ADS)

Lafane, S.; Kerdja, T.; Abdelli-Messaci, S.; Khereddine, Y.; Kechouane, M.; Nemraoui, O.

2013-07-01

Vanadium dioxide thin films have been deposited on Corning glass substrates by a KrF laser ablation of V2O5 target at the laser fluence of 2 J cm-2. The substrate temperature and the target-substrate distance were set to 500 ∘C and 4 cm, respectively. X-ray diffraction analysis showed that pure VO2 is only obtained at an oxygen pressure range of 4×10-3-2×10-2 mbar. A higher optical switching contrast was obtained for the VO2 films deposited at 4×10-3-10-2 mbar. The films properties were correlated to the plume-oxygen gas interaction monitored by fast imaging of the plume.

Microwave Tunable Metamaterial Based on Semiconductor-to-Metal Phase Transition.

PubMed

Zhang, Guanqiao; Ma, He; Lan, Chuwen; Gao, Rui; Zhou, Ji

2017-07-18

A microwave tunable metamaterial utilizing the semiconductor-to-metal transition of vanadium dioxide (VO 2 ) is proposed, experimentally demonstrated and theoretically scrutinized. Basic concept of the design involves the combination of temperature-dependent hysteresis in VO 2 with resonance induced heating, resulting in a nonlinear response to power input. A lithographically prepared gold split-rings resonator (SRR) array deposited with VO 2 thin film is fabricated. Transmission spectra analysis shows a clear manifestation of nonlinearity, involving power-dependence of resonant frequency as well as transmitted intensity at both elevated and room temperature. Simulation performed with CST Microwave Studio conforms with the findings. The concept may find applications in transmission modulation and frequency tuning devices working under microwave frequency bands.

Tunable multiband polarization conversion and manipulation in vanadium dioxide-based asymmetric chiral metamaterial

NASA Astrophysics Data System (ADS)

Song, Shichao; Ma, Xiaoliang; Pu, Mingbo; Li, Xiong; Zhang, Zuojun; Gao, Ping; Luo, Xiangang

2018-04-01

Tunable multiband polarization conversion and manipulation are achieved by introducing vanadium dioxide (VO2) into a planar spiral asymmetric chiral metamaterial. Numerical simulations demonstrate that when VO2 is in the insulating state, circularly polarized electromagnetic waves are emitted at two distinct resonant frequencies. When VO2 is in the metallic state, the number of resonant frequencies changes from two to four. In addition, the initial left-handed and right-handed circularly polarized transmitted waves correspondingly transform into right and left ones. Moreover, the surface current distributions are studied in order to investigate the transformation behaviors of both the insulating and metallic states.

Multilevel radiative thermal memory realized by the hysteretic metal-insulator transition of vanadium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ito, Kota, E-mail: kotaito@mosk.tytlabs.co.jp; Nishikawa, Kazutaka; Iizuka, Hideo

Thermal information processing is attracting much interest as an analog of electronic computing. We experimentally demonstrated a radiative thermal memory utilizing a phase change material. The hysteretic metal-insulator transition of vanadium dioxide (VO{sub 2}) allows us to obtain a multilevel memory. We developed a Preisach model to explain the hysteretic radiative heat transfer between a VO{sub 2} film and a fused quartz substrate. The transient response of our memory predicted by the Preisach model agrees well with the measured response. Our multilevel thermal memory paves the way for thermal information processing as well as contactless thermal management.

Fast Adaptive Thermal Camouflage Based on Flexible VO₂/Graphene/CNT Thin Films.

PubMed

Xiao, Lin; Ma, He; Liu, Junku; Zhao, Wei; Jia, Yi; Zhao, Qiang; Liu, Kai; Wu, Yang; Wei, Yang; Fan, Shoushan; Jiang, Kaili

2015-12-09

Adaptive camouflage in thermal imaging, a form of cloaking technology capable of blending naturally into the surrounding environment, has been a great challenge in the past decades. Emissivity engineering for thermal camouflage is regarded as a more promising way compared to merely temperature controlling that has to dissipate a large amount of excessive heat. However, practical devices with an active modulation of emissivity have yet to be well explored. In this letter we demonstrate an active cloaking device capable of efficient thermal radiance control, which consists of a vanadium dioxide (VO2) layer, with a negative differential thermal emissivity, coated on a graphene/carbon nanotube (CNT) thin film. A slight joule heating drastically changes the emissivity of the device, achieving rapid switchable thermal camouflage with a low power consumption and excellent reliability. It is believed that this device will find wide applications not only in artificial systems for infrared camouflage or cloaking but also in energy-saving smart windows and thermo-optical modulators.

Influence of Thermal Annealing Treatment on Bipolar Switching Properties of Vanadium Oxide Thin-Film Resistance Random-Access Memory Devices

NASA Astrophysics Data System (ADS)

Chen, Kai-Huang; Cheng, Chien-Min; Kao, Ming-Cheng; Chang, Kuan-Chang; Chang, Ting-Chang; Tsai, Tsung-Ming; Wu, Sean; Su, Feng-Yi

2017-04-01

The bipolar switching properties and electrical conduction mechanism of vanadium oxide thin-film resistive random-access memory (RRAM) devices obtained using a rapid thermal annealing (RTA) process have been investigated in high-resistive status/low-resistive status (HRS/LRS) and are discussed herein. In addition, the resistance switching properties and quality improvement of the vanadium oxide thin-film RRAM devices were measured by x-ray diffraction (XRD) analysis, x-ray photoelectron spectrometry (XPS), scanning electron microscopy (SEM), atomic force microscopy (AFM), and current-voltage ( I- V) measurements. The activation energy of the hopping conduction mechanism in the devices was investigated based on Arrhenius plots in HRS and LRS. The hopping conduction distance and activation energy barrier were obtained as 12 nm and 45 meV, respectively. The thermal annealing process is recognized as a candidate method for fabrication of thin-film RRAM devices, being compatible with integrated circuit technology for nonvolatile memory devices.

Plasmonic enhancement of the vanadium dioxide phase transition induced by low-power laser irradiation

NASA Astrophysics Data System (ADS)

Ferrara, Davon W.; MacQuarrie, Evan R.; Diez-Blanco, Victor; Nag, Joyeeta; Kaye, Anthony B.; Haglund, Richard F.

2012-08-01

Nanocomposites consisting of gold nanoparticle (NP) arrays and vanadium dioxide (VO2) thin films are noteworthy for the tunability of both their thermal and optical properties. The localized surface plasmon resonance (LSPR) of the Au can be tuned when its dielectric environment is modulated by the semiconducting-to-metal phase transition (SMT) of the VO2; the LSPR itself can be altered by changing the shape of the NPs and the pitch of the NP array. In principle, then it should be possible to choose a combination of VO2 film and Au LSPR properties that maximizes the overall optical response of the nanocomposite. To demonstrate this effect, transient transmission measurements were conducted on lithographically fabricated arrays of Au NPs of diameter 140 nm, array spacing 350 nm, and covered with a 60 nm thick films of VO2 via pulsed laser deposition. Both Au::VO2 nanocomposites and bare VO2 film were irradiated with a shuttered 785 nm pump laser, and their optical response was probed at 1550 nm by a fixed-frequency diode laser. The Au::VO2 nanocomposite exhibited an increased effective absorption coefficient 1.5 times that of the plain film and required 37 % less laser power to induce the SMT. The time-dependent temperature rise in the film as a function of laser intensity was calculated from these measurements and compared with both analytic and finite-element models. Our results suggest that Au::VO2 nanocomposites may be useful in applications such as thermal-management coatings for energy efficient "smart" windows.

Nonlinear optical properties of thick composite media with vanadium dioxide nanoparticles. I. Self-defocusing of radiation in the visible and near-IR regions

NASA Astrophysics Data System (ADS)

Ostrosablina, A. A.; Sidorov, A. I.

2005-07-01

This paper presents the experimental and theoretical results of a study of the interaction of pulsed laser radiation with thick composite media containing nanoparticles of vanadium dioxide (VO2). It establishes that the reversible semiconductor-metal phase transition that occurs in VO2 nanoparticles under the action of radiation can produce self-defocusing of radiation in the visible and near-IR regions because of the formation of a photoinduced dynamic lens. An analysis is carried out of how the radiation intensity affects the dynamics of these processes. It is shown that photoinduced absorption and scattering play a role in forming the nonlinear optical response.

Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition

NASA Astrophysics Data System (ADS)

Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W.; Kitano, Masao

2016-03-01

This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide ($\\mathrm{VO}_2$), the proposed metamaterial is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

Dynamically Babinet-invertible metasurface: a capacitive-inductive reconfigurable filter for terahertz waves using vanadium-dioxide metal-insulator transition.

PubMed

Urade, Yoshiro; Nakata, Yosuke; Okimura, Kunio; Nakanishi, Toshihiro; Miyamaru, Fumiaki; Takeda, Mitsuo W; Kitano, Masao

2016-03-07

This paper proposes a reconfigurable planar metamaterial that can be switched between capacitive and inductive responses using local changes in the electrical conductivity of its constituent material. The proposed device is based on Babinet's principle and exploits the singular electromagnetic responses of metallic checkerboard structures, which are dependent on the local electrical conductivity. Utilizing the heating-induced metal-insulator transition of vanadium dioxide (VO 2 ), the proposed meta-material is designed to compensate for the effect of the substrate and is experimentally characterized in the terahertz regime. This reconfigurable metamaterial can be utilized as a switchable filter and as a switchable phase shifter for terahertz waves.

Hydrogen-induced morphotropic phase transformation of single-crystalline vanadium dioxide nanobeams.

PubMed

Hong, Woong-Ki; Park, Jong Bae; Yoon, Jongwon; Kim, Bong-Joong; Sohn, Jung Inn; Lee, Young Boo; Bae, Tae-Sung; Chang, Sung-Jin; Huh, Yun Suk; Son, Byoungchul; Stach, Eric A; Lee, Takhee; Welland, Mark E

2013-04-10

We report a morphotropic phase transformation in vanadium dioxide (VO2) nanobeams annealed in a high-pressure hydrogen gas, which leads to the stabilization of metallic phases. Structural analyses show that the annealed VO2 nanobeams are hexagonal-close-packed structures with roughened surfaces at room temperature, unlike as-grown VO2 nanobeams with the monoclinic structure and with clean surfaces. Quantitative chemical examination reveals that the hydrogen significantly reduces oxygen in the nanobeams with characteristic nonlinear reduction kinetics which depend on the annealing time. Surprisingly, the work function and the electrical resistance of the reduced nanobeams follow a similar trend to the compositional variation due mainly to the oxygen-deficiency-related defects formed at the roughened surfaces. The electronic transport characteristics indicate that the reduced nanobeams are metallic over a large range of temperatures (room temperature to 383 K). Our results demonstrate the interplay between oxygen deficiency and structural/electronic phase transitions, with implications for engineering electronic properties in vanadium oxide systems.

Imaging Nanometer Phase Coexistence at Defects During the Insulator-Metal Phase Transformation in VO2 Thin Films by Resonant Soft X-ray Holography.

PubMed

Vidas, Luciana; Günther, Christian M; Miller, Timothy A; Pfau, Bastian; Perez-Salinas, Daniel; Martínez, Elías; Schneider, Michael; Gührs, Erik; Gargiani, Pierluigi; Valvidares, Manuel; Marvel, Robert E; Hallman, Kent A; Haglund, Richard F; Eisebitt, Stefan; Wall, Simon

2018-05-18

We use resonant soft X-ray holography to image the insulator-metal phase transition in vanadium dioxide with element and polarization specificity and nanometer spatial resolution. We observe that nanoscale inhomogeneity in the film results in spatial-dependent transition pathways between the insulating and metallic states. Additional nanoscale phases form in the vicinity of defects which are not apparent in the initial or final states of the system, which would be missed in area-integrated X-ray absorption measurements. These intermediate phases are vital to understand the phase transition in VO 2 , and our results demonstrate how resonant imaging can be used to understand the electronic properties of phase-separated correlated materials obtained by X-ray absorption.

VO 2 thin films synthesis for collaborators and various applications.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Johnson, Raegan Lynn; Clem, Paul G.

2016-11-01

Vanadium dioxide (VO 2) is an attractive material for a variety of applications due to its metal-to-insulator transition (MIT) observed at modest temperatures. This transition takes VO 2 from its low temperature insulating monoclinic phase to a high temperature (above 68°C) metallic rutile phase. This transition gives rise to a change in resistivity up to 5 orders of magnitude and a change in complex refractive index (especially at IR wavelengths), which is of interest for radar circuit protection and tunable control of infrared signature. Recently, collaborations have been initiated between CINT scientists and external university programs. The Enhanced Surveillance fundsmore » help fund this work which enabled synthesis of VO 2 films for several collaborations with internal and external researchers.« less

Thermally Stable Solution Processed Vanadium Oxide as a Hole Extraction Layer in Organic Solar Cells

PubMed Central

Alsulami, Abdullah; Griffin, Jonathan; Alqurashi, Rania; Yi, Hunan; Iraqi, Ahmed; Lidzey, David; Buckley, Alastair

2016-01-01

Low-temperature solution-processable vanadium oxide (V2Ox) thin films have been employed as hole extraction layers (HELs) in polymer bulk heterojunction solar cells. V2Ox films were fabricated in air by spin-coating vanadium(V) oxytriisopropoxide (s-V2Ox) at room temperature without the need for further thermal annealing. The deposited vanadium(V) oxytriisopropoxide film undergoes hydrolysis in air, converting to V2Ox with optical and electronic properties comparable to vacuum-deposited V2O5. When s-V2Ox thin films were annealed in air at temperatures of 100 °C and 200 °C, OPV devices showed similar results with good thermal stability and better light transparency. Annealing at 300 °C and 400 °C resulted in a power conversion efficiency (PCE) of 5% with a decrement approximately 15% lower than that of unannealed films; this is due to the relative decrease in the shunt resistance (Rsh) and an increase in the series resistance (Rs) related to changes in the oxidation state of vanadium. PMID:28773356

DOE Office of Scientific and Technical Information (OSTI.GOV)

He, Haowei; Gray, A. X.; Granitzka, P.

Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic x-ray scattering is used to measure the excitation spectrum of charge and spin degrees of freedom at the vanadium L edge under different polarization and temperature conditions, revealing excitations that differ greatly from those seen in optical measurements. Furthermore, these spectra encode the evolution of short-range energetics across the metal-insulator transition, including the low-temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer.

Comparative study of structural, optical and impedance measurements on V{sub 2}O{sub 5} and V-Ce mixed oxide thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malini, D. Rachel; Sanjeeviraja, C., E-mail: sanjeeviraja@rediffmail.com

Vanadium pentoxide (V{sub 2}O{sub 5}) and Vanadium-Cerium mixed oxide thin films at different molar ratios of V{sub 2}O{sub 5} and CeO{sub 2} have been deposited at 200 W rf power by rf planar magnetron sputtering in pure argon atmosphere. The structural and optical properties were studied by taking X-ray diffraction and transmittance and absorption spectra respectively. The amorphous thin films show an increase in transmittance and optical bandgap with increase in CeO{sub 2} content in as-prepared thin films. The impedance measurements for as-deposited thin films show an increase in electrical conductivity with increase in CeO{sub 2} material.

Electric-field-driven phase transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Wu, B.; Zimmers, A.; Aubin, H.; Gosh, R.; Liu, Y.; Lopez, R.

2011-03-01

In recent years, various strongly correlated materials have shown sharp switching from insulator to metallic state in their I(V) transport curves. Determining if this is purely an out of equilibrium phenomena (due to the strong electric field applied throughout the sample) or simply a Joule heating issue is still an open question. To address this issue, we have first measured local I(V) curves in vanadium dioxide (VO2) Mott insulator at various temperatures using a conducting AFM setup and determined the voltage threshold of the insulator to metal switching. By lifting the tip above the surface (> 35 nm) , wehavethenmeasuredthepurelyelectrostaticforcebetweenthetipandsamplesurfaceasthevoltagebetweenthesetwowasincreased . Inaverynarrowtemperaturerange (below 360 K) , atipheightrange (below 60 nm) andavoltageappliedrange (above 8 V) , weobservedswitchingintheelectrostaticforce (telegraphicnoisevs . timeandvs . voltage) . ThispurelyelectricfieldeffectshowsthattheswitchingphenomenonisstillpresentevenwithoutJouleheatinginVO 2 .

Optical modulation in silicon-vanadium dioxide photonic structures

NASA Astrophysics Data System (ADS)

Miller, Kevin J.; Hallman, Kent A.; Haglund, Richard F.; Weiss, Sharon M.

2017-08-01

All-optical modulators are likely to play an important role in future chip-scale information processing systems. In this work, through simulations, we investigate the potential of a recently reported vanadium dioxide (VO2) embedded silicon waveguide structure for ultrafast all-optical signal modulation. With a VO2 length of only 200 nm, finite-differencetime- domain simulations suggest broadband (200 nm) operation with a modulation greater than 12 dB and an insertion loss of less than 3 dB. Predicted performance metrics, including modulation speed, modulation depth, optical bandwidth, insertion loss, device footprint, and energy consumption of the proposed Si-VO2 all-optical modulator are benchmarked against those of current state-of-the-art all-optical modulators with in-plane optical excitation.

Studies on annealed ZnO:V thin films deposited by nebulised spray pyrolysis method

NASA Astrophysics Data System (ADS)

Malini, D. Rachel

2018-04-01

Structural, optical and photoluminescence properties of annealed ZnO:V thin films deposited by nebulized spray pyrolysis technique by varying vanadium concentration are studied. Thickness of thin films varies from 1.52µm to 7.78µm. V2O5, VO2 and ZnO peaks are observed in XRD patterns deposited with high vanadium concentration and the intensity of peaks corresponding to ZnO decreases in those samples. Morphological properties were studied by analysing SEM images and annealed thin films deposited at ZnO:V = 50:50 possess dumb bell shape grains. Emission peaks corresponding to both Augur transition and deep level transition are observed in the PL spectra of the samples.

Optimization of conditions for growth of vanadium dioxide thin films on silicon by pulsed-laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shibuya, Keisuke, E-mail: k.shibuya@aist.go.jp; Sawa, Akihito

2015-10-15

We systematically examined the effects of the substrate temperature (T{sub S}) and the oxygen pressure (P{sub O2}) on the structural and optical properties polycrystalline V O{sub 2} films grown directly on Si(100) substrates by pulsed-laser deposition. A rutile-type V O{sub 2} phase was formed at a T{sub S} ≥ 450 °C at P{sub O2} values ranging from 5 to 20 mTorr, whereas other structures of vanadium oxides were stabilized at lower temperatures or higher oxygen pressures. The surface roughness of the V O{sub 2} films significantly increased at growth temperatures of 550 °C or more due to agglomeration of Vmore » O{sub 2} on the surface of the silicon substrate. An apparent change in the refractive index across the metal–insulator transition (MIT) temperature was observed in V O{sub 2} films grown at a T{sub S} of 450 °C or more. The difference in the refractive index at a wavelength of 1550 nm above and below the MIT temperature was influenced by both the T{sub S} and P{sub O2}, and was maximal for a V O{sub 2} film grown at 450 °C under 20 mTorr. Based on the results, we derived the P{sub O2} versus 1/T{sub S} phase diagram for the films of vanadium oxides, which will provide a guide to optimizing the conditions for growth of V O{sub 2} films on silicon platforms.« less

Phase formation polycrystalline vanadium oxide via thermal annealing process under controlled nitrogen pressure

NASA Astrophysics Data System (ADS)

Jessadaluk, S.; Khemasiri, N.; Rahong, S.; Rangkasikorn, A.; Kayunkid, N.; Wirunchit, S.; Horprathum, M.; Chananonnawathron, C.; Klamchuen, A.; Nukeaw, J.

2017-09-01

This article provides an approach to improve and control crystal phases of the sputtering vanadium oxide (VxOy) thin films by post-thermal annealing process. Usually, as-deposited VxOy thin films at room temperature are amorphous phase: post-thermal annealing processes (400 °C, 2 hrs) under the various nitrogen (N2) pressures are applied to improve and control the crystal phase of VxOy thin films. The crystallinity of VxOy thin films changes from amorphous to α-V2O5 phase or V9O17 polycrystalline, which depend on the pressure of N2 carrier during annealing process. Moreover, the electrical resistivity of the VxOy thin films decrease from 105 Ω cm (amorphous) to 6×10-1 Ω cm (V9O17). Base on the results, our study show a simply method to improve and control phase formation of VxOy thin films.

Microstructure and thermochromic properties of VOX-WOX-VOX ceramic thin films

NASA Astrophysics Data System (ADS)

Khamseh, S.; Araghi, H.; Ghahari, M.; Faghihi Sani, M. A.

2016-03-01

W-doped VO2 films have been synthesized via oxygen annealing of V-W-V (vanadium-tungsten-vanadium) multilayered films. The effects of middle layer's thickness of V-W-V multilayered film on structure and properties of VOX-WOX-VOX ceramic thin films were investigated. The as-deposited V-W-V multilayered film showed amorphous-like structure when mixed structure of VO2 (M) and VO2 (B) was formed in VOX-WOX-VOX ceramic thin films. Tungsten content of VOX-WOX-VOX ceramic thin films increased with increasing middle layer's thickness. With increasing middle layer's thickness, room temperature square resistance ( R sq) of VOX-WOX-VOX ceramic thin films increased from 65 to 86 kΩ/sq. The VOX-WOX-VOX ceramic thin film with the thinnest middle layer showed significant SMT (semiconductor-metal transition) when SMT became negligible on increasing middle layer's thickness.

Electrical switching and oscillations in vanadium dioxide

NASA Astrophysics Data System (ADS)

Pergament, Alexander; Velichko, Andrey; Belyaev, Maksim; Putrolaynen, Vadim

2018-05-01

We have studied electrical switching with S-shaped I-V characteristics in two-terminal MOM devices based on vanadium dioxide thin films. The switching effect is associated with the metal-insulator phase transition. Relaxation oscillations are observed in circuits with VO2-based switches. Dependences of the oscillator critical frequency Fmax, threshold power and voltage, as well as the time of current rise, on the switching structure size are obtained by numerical simulation. The empirical dependence of the threshold voltage on the switching region dimensions and film thickness is found. It is shown that, for the VO2 channel sizes of 10 × 10 nm, Fmax can reach the value of 300 MHz at a film thickness of 20 nm. Next, it is shown that oscillatory neural networks can be implemented on the basis of coupled VO2 oscillators. For the weak capacitive coupling, we revealed the dependence of the phase difference upon synchronization on the coupling capacitance value. When the switches are scaled down, the limiting time of synchronization is reduced to Ts 13 μs, and the number of oscillation periods for the entering to the synchronization mode remains constant, Ns 17. In the case of weak thermal coupling in the synchronization mode, we observe in-phase behavior of oscillators, and there is a certain range of parameters of the supply current, in which the synchronization effect becomes possible. With a decrease in dimensions, a decrease in the thermal coupling action radius is observed, which can vary in the range from 0.5 to 50 μm for structures with characteristic dimensions of 0.1-5 μm, respectively. Thermal coupling may have a promising effect for realization of a 3D integrated oscillatory neural network.

Evolution of Metallicity in Vanadium Dioxide by Creation of Oxygen Vacancies

NASA Astrophysics Data System (ADS)

Zhang, Zhen; Zuo, Fan; Wan, Chenghao; Dutta, Aveek; Kim, Jongbum; Rensberg, Jura; Nawrodt, Ronny; Park, Helen Hejin; Larrabee, Thomas J.; Guan, Xiaofei; Zhou, You; Prokes, S. M.; Ronning, Carsten; Shalaev, Vladimir M.; Boltasseva, Alexandra; Kats, Mikhail A.; Ramanathan, Shriram

2017-03-01

Tuning of the electronic state of correlated materials is key to their eventual use in advanced electronics and photonics. The prototypical correlated oxide (VO2 ) is insulating at room temperature and transforms to a metallic state when heated to 67 °C (340 K). We report the emergence of a metallic state that is preserved down to 1.8 K by annealing thin films of VO2 at an ultralow oxygen partial pressure (PO2˜10-24 atm ). The films can be reverted back to their original state by annealing in oxygen, and this process can be iterated multiple times. The metallic phase created by oxygen deficiency has a tetragonal rutile structure and contains a large number of oxygen vacancies far beyond the solubility at equilibrium (greater than approximately 50 times). The oxygen starvation reduces the oxidation state of vanadium from V4 + to V3 + and leads to the metallization. The extent of resistance reduction (concurrent with tuning of optical properties) can be controlled by the time-temperature envelope of the annealing conditions since the process is diffusionally driven. This experimental platform, which can extensively tune oxygen vacancies in correlated oxides, provides an approach to study emergent phases and defect-mediated adaptive electronic and structural phase boundary crossovers.

Tunable assembly of vanadium dioxide nanoparticles to create porous film for energy-saving applications.

PubMed

Ding, Shangjun; Liu, Zhanqiang; Li, Dezeng; Zhao, Wei; Wang, Yaoming; Wan, Dongyun; Huang, Fuqiang

2013-03-13

Nanoparticle-assembled vanadium dioxide (VO2) films have been easily prepared with the assistance of cetyltrimethylammonium vanadate (CTAV) precursor which exhibits self-assembly properties. The obtained VO2 film has a micro/nano hierarchical porous structure, so its visible-light transmittance is significantly improved (∼25% increased compared to continuous film). The VO2 particle density as well as the film porosity can be facilely controlled by adjusting experimental parameters such as dip-coating speed. Accordingly, film optical properties can also be tuned to a large extent, in particular the visible transmittance (Tvis) and near-infrared switching efficiency (ΔTnir). These VO2 nanoparticle-assembled films prepared by this novel method provide a useful model to research the balance between Tvis and ΔTnir.

On the metal-insulator-transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Jovaini, Azita; Fujita, Shigeji; Godoy, Salvador; Suzuki, Akira

2012-02-01

Vanadium dioxide (VO2) undergoes a metal-insulator transition (MIT) at 340 K with the structural change from tetragonal to monoclinic crystal. The conductivity σ drops at MIT by four orders of magnitude. The low temperature monoclinic phase is known to have a lower ground-state energy. The existence of the k-vector k is prerequisite for the conduction since the k appears in the semiclassical equation of motion for the conduction electron (wave packet). The tetragonal (VO2)3 unit is periodic along the crystal's x-, y-, and z-axes, and hence there is a three-dimensional k-vector. There is a one-dimensional k for a monoclinic crystal. We believe this difference in the dimensionality of the k-vector is the cause of the conductivity drop.

Broadband and high modulation-depth THz modulator using low bias controlled VO2-integrated metasurface.

PubMed

Zhou, Gaochao; Dai, Penghui; Wu, Jingbo; Jin, Biaobing; Wen, Qiye; Zhu, Guanghao; Shen, Ze; Zhang, Caihong; Kang, Lin; Xu, Weiwei; Chen, Jian; Wu, Peiheng

2017-07-24

An active vanadium dioxide integrated metasurface offering broadband transmitted terahertz wave modulation with large modulation-depth under electrical control is demonstrated. The device consists of metal bias-lines arranged with grid-structure patterned vanadium dioxide (VO 2 ) film on sapphire substrate. Amplitude transmission is continuously tuned from more than 78% to 28% or lower in the frequency range from 0.3 THz to 1.0 THz, by means of electrical bias at temperature of 68 °C. The physical mechanism underlying the device's electrical tunability is investigated and found to be attributed to the ohmic heating. The developed device possessing over 87% modulation depth with 0.7 THz frequency band is expected to have many potential applications in THz regime such as tunable THz attenuator.

The leaching of vanadium(V) in soil due to the presence of atmospheric carbon dioxide and ammonia.

PubMed

Mandiwana, Khakhathi L; Panichev, Nikolay

2009-10-30

The natural leaching of vanadium(V) with CO2 from soil-water in the presence of ammonia, a known precursor to atmospheric aerosols, has been tested by bubbling carbon dioxide through soil suspension with varying amount of ammonia. It was found that the leaching of V(V) is enhanced in the presence of ammonia. From the results of the investigation, it could be concluded that atmospheric CO2 in the presence of ammonia (the only atmospheric gas that increases the pH of soil-water) could naturally leach V(V) from soil. Furthermore, it was also shown that the presence of (NH4)2CO3 in soil could enhance the leaching of toxic V(V) species thereby making it bioavailable for both plants and animals.

Measurement of collective excitations in VO 2 by resonant inelastic x-ray scattering

DOE PAGES

He, Haowei; Gray, A. X.; Granitzka, P.; ...

2016-10-15

Vanadium dioxide is of broad interest as a spin-1/2 electron system that realizes a metal-insulator transition near room temperature, due to a combination of strongly correlated and itinerant electron physics. Here, resonant inelastic x-ray scattering is used to measure the excitation spectrum of charge and spin degrees of freedom at the vanadium L edge under different polarization and temperature conditions, revealing excitations that differ greatly from those seen in optical measurements. Furthermore, these spectra encode the evolution of short-range energetics across the metal-insulator transition, including the low-temperature appearance of a strong candidate for the singlet-triplet excitation of a vanadium dimer.

Harnessing the metal-insulator transition for tunable metamaterials

NASA Astrophysics Data System (ADS)

Charipar, Nicholas A.; Charipar, Kristin M.; Kim, Heungsoo; Bingham, Nicholas S.; Suess, Ryan J.; Mathews, Scott A.; Auyeung, Raymond C. Y.; Piqué, Alberto

2017-08-01

The control of light-matter interaction through the use of subwavelength structures known as metamaterials has facilitated the ability to control electromagnetic radiation in ways not previously achievable. A plethora of passive metamaterials as well as examples of active or tunable metamaterials have been realized in recent years. However, the development of tunable metamaterials is still met with challenges due to lack of materials choices. To this end, materials that exhibit a metal-insulator transition are being explored as the active element for future metamaterials because of their characteristic abrupt change in electrical conductivity across their phase transition. The fast switching times (▵t < 100 fs) and a change in resistivity of four orders or more make vanadium dioxide (VO2) an ideal candidate for active metamaterials. It is known that the properties associated with thin film metal-insulator transition materials are strongly dependent on the growth conditions. For this work, we have studied how growth conditions (such as gas partial pressure) influence the metalinsulator transition in VO2 thin films made by pulsed laser deposition. In addition, strain engineering during the growth process has been investigated as a method to tune the metal-insulator transition temperature. Examples of both the optical and electrical transient dynamics facilitating the metal-insulator transition will be presented together with specific examples of thin film metamaterial devices.

Study on Thermochromic VO2 Films Grown on ZnO-Coated Glass Substrates for “Smart Windows”

NASA Astrophysics Data System (ADS)

Kato, Kazuhiro; Song, Pung Keun; Odaka, Hidehumi; Shigesato, Yuzo

2003-10-01

Vanadium dioxide (VO2) is one of the most attractive thermochromic materials, which show large changes in optical and electrical properties at the transition temperature (Tt) close to the atmospheric temperature (approximately 340 K). We already reported for VO2 deposition by rf magnetron sputtering using V2O3 or V2O5 targets that VO2 films thicker than 400 nm showed high thermochromic performance, whereas the VO2 films thinner than 200 nm did not show such performance because of their poor crystallinity and off-stoichiometry. In this study, very thin thermochromic VO2 films with thicknesses of about 50 nm were successfully deposited using highly < 001>-preferred oriented ZnO polycrystalline films as a buffer layer between the VO2 film and glass substrate (VO2/ZnO/glass) because of the heteroepitaxial growth of VO2 polycrystalline films. W-doped VO2 films were also deposited on the ZnO-coated glass substrates (ZnO/glass) by cosputtering. It was confirmed that W doping for thin VO2 films deposited on the ZnO/glass can decrease Tt systematically. Such very thin VO2 films should have high potential for application in “smart windows”.

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Hydrophilic Channel Alignment of Perfluoronated Sulfonic-Acid Ionomers for Vanadium Redox Flow Batteries.

PubMed

So, Soonyong; Cha, Min Suc; Jo, Sang-Woo; Kim, Tae-Ho; Lee, Jang Yong; Hong, Young Taik

2018-06-13

It is known that uniaxially drawn perfluoronated sulfonic-acid ionomers (PFSAs) show diffusion anisotropy because of the aligned water channels along the deformation direction. We apply the uniaxially stretched membranes to vanadium redox flow batteries (VRFBs) to suppress the permeation of active species, vanadium ions through the transverse directions. The aligned water channels render much lower vanadium permeability, resulting in higher Coulombic efficiency (>98%) and longer self-discharge time (>250 h). Similar to vanadium ions, proton conduction through the membranes also decreases as the stretching ratio increases, but the thinned membranes show the enhanced voltage and energy efficiencies over the range of current density, 50-100 mA/cm 2 . Hydrophilic channel alignment of PFSAs is also beneficial for long-term cycling of VRFBs in terms of capacity retention and cell performances. This simple pretreatment of membranes offers an effective and facile way to overcome high vanadium permeability of PFSAs for VRFBs.

Plasma enhanced chemical vapor deposition (PECVD) method of forming vanadium oxide films and vanadium oxide thin-films prepared thereby

DOEpatents

Zhang, Ji-Guang; Tracy, C. Edwin; Benson, David K.; Turner, John A.; Liu, Ping

2000-01-01

A method is disclosed of forming a vanadium oxide film on a substrate utilizing plasma enhanced chemical vapor deposition. The method includes positioning a substrate within a plasma reaction chamber and then forming a precursor gas comprised of a vanadium-containing chloride gas in an inert carrier gas. This precursor gas is then mixed with selected amounts of hydrogen and oxygen and directed into the reaction chamber. The amounts of precursor gas, oxygen and hydrogen are selected to optimize the final properties of the vanadium oxide film An rf plasma is generated within the reaction chamber to chemically react the precursor gas with the hydrogen and the oxygen to cause deposition of a vanadium oxide film on the substrate while the chamber deposition pressure is maintained at about one torr or less. Finally, the byproduct gases are removed from the plasma reaction chamber.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties.

PubMed

Dey, Arjun; Nayak, Manish Kumar; Esther, A Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A K; Bera, Parthasarathi; Barshilia, Harish C; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D Raghavendra; Sridhara, N; Sharma, Anand Kumar

2016-11-17

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V 2 O 5 , V 2 O 3 and VO 2 along with MoO 3 . Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10 -5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

NASA Astrophysics Data System (ADS)

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-11-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21-475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45-50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10-5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films.

Reactions of sulfur dioxide with neutral vanadium oxide clusters in the gas phase. I. Density functional theory study.

PubMed

Jakubikova, Elena; Bernstein, Elliot R

2007-12-27

Thermodynamics of reactions of vanadium oxide clusters with SO2 are studied at the BPW91/LANL2DZ level of theory. BPW91/LANL2DZ is insufficient to properly describe relative V-O and S-O bond strengths of vanadium and sulfur oxides. Calibration of theoretical results with experimental data is necessary to compute reliable enthalpy changes for reactions between VxOy and SO2. Theoretical results indicate SO2 to SO conversion occurs for oxygen-deficient clusters and SO2 to SO3 conversion occurs for oxygen-rich clusters. Stable intermediate structures of VOy (y = 1 - 4) clusters with SO2 are also obtained at the BPW91/TZVP level of theory. Some possible mechanisms for SO3 formation and catalyst regeneration for condensed-phase systems are suggested. These results are in agreement with, and complement, gas-phase experimental studies of neutral vanadium oxide clusters.

Vanadium dioxide nanogrid films for high transparency smart architectural window applications.

PubMed

Liu, Chang; Balin, Igal; Magdassi, Shlomo; Abdulhalim, Ibrahim; Long, Yi

2015-02-09

This study presents a novel approach towards achieving high luminous transmittance (T(lum)) for vanadium dioxide (VO(2)) thermochromic nanogrid films whilst maintaining the solar modulation ability (ΔT(sol)). The perforated VO(2)-based films employ orderly-patterned nano-holes, which are able to favorably transmit visible light dramatically but retain large near-infrared modulation, thereby enhancing ΔT(sol). Numerical optimizations using parameter search algorithms have implemented through a series of Finite Difference Time Domain (FDTD) simulations by varying film thickness, cell periodicity, grid dimensions and variations of grid arrangement. The best performing results of T(lum) (76.5%) and ΔT(sol) (14.0%) are comparable, if not superior, to the results calculated from nanothermochromism, nanoporosity and biomimic nanostructuring. It opens up a new approach for thermochromic smart window applications.

Spatial gradient tuning in metamaterials

NASA Astrophysics Data System (ADS)

Driscoll, Tom; Goldflam, Michael; Jokerst, Nan; Basov, Dimitri; Smith, David

2011-03-01

Gradient Index (GRIN) metamaterials have been used to create devices inspired by, but often surpassing the potential of, conventional GRIN optics. The unit-cell nature of metamaterials presents the opportunity to exert much greater control over spatial gradients than is possible in natural materials. This is true not only during the design phase but also offers the potential for real-time reconfiguration of the metamaterial gradient. This ability fits nicely into the picture of transformation-optics, in which spatial gradients can enable an impressive suite of innovative devices. We discuss methods to exert control over metamaterial response, focusing on our recent demonstrations using Vanadium Dioxide. We give special attention to role of memristance and mem-capacitance observed in Vanadium Dioxide, which simplify the demands of stimuli and addressing, as well as intersecting metamaterials with the field of memory-materials.

Tunable VO{sub 2}/Au hyperbolic metamaterial

DOE Office of Scientific and Technical Information (OSTI.GOV)

Prayakarao, S.; Noginov, M. A., E-mail: mnoginov@nsu.edu; Mendoza, B.

2016-08-08

Vanadium dioxide (VO{sub 2}) is known to have a semiconductor-to-metal phase transition at ∼68 °C. Therefore, it can be used as a tunable component of an active metamaterial. The lamellar metamaterial studied in this work is composed of subwavelength VO{sub 2} and Au layers and is designed to undergo a temperature controlled transition from the optical hyperbolic phase to the metallic phase. VO{sub 2} films and VO{sub 2}/Au lamellar metamaterial stacks have been fabricated and studied in electrical conductivity and optical (transmission and reflection) experiments. The observed temperature-dependent changes in the reflection and transmission spectra of the metamaterials and VO{sub 2}more » thin films are in a good qualitative agreement with theoretical predictions. The demonstrated optical hyperbolic-to-metallic phase transition is a unique physical phenomenon with the potential to enable advanced control of light-matter interactions.« less

VO2 Thermochromic Films on Quartz Glass Substrate Grown by RF-Plasma-Assisted Oxide Molecular Beam Epitaxy

PubMed Central

Zhang, Dong; Sun, Hong-Jun; Wang, Min-Huan; Miao, Li-Hua; Liu, Hong-Zhu; Zhang, Yu-Zhi; Bian, Ji-Ming

2017-01-01

Vanadium dioxide (VO2) thermochromic thin films with various thicknesses were grown on quartz glass substrates by radio frequency (RF)-plasma assisted oxide molecular beam epitaxy (O-MBE). The crystal structure, morphology and chemical stoichiometry were investigated systemically by X-ray diffraction (XRD), atomic force microscopy (AFM), Raman spectroscopy and X-ray photoelectron spectroscopy (XPS) analyses. An excellent reversible metal-to-insulator transition (MIT) characteristics accompanied by an abrupt change in both electrical resistivity and optical infrared (IR) transmittance was observed from the optimized sample. Remarkably, the transition temperature (TMIT) deduced from the resistivity-temperature curve was reasonably consistent with that obtained from the temperature-dependent IR transmittance. Based on Raman measurement and XPS analyses, the observations were interpreted in terms of residual stresses and chemical stoichiometry. This achievement will be of great benefit for practical application of VO2-based smart windows. PMID:28772673

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials

DOE PAGES

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.; ...

2017-07-21

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

Dynamically Reconfigurable Metadevice Employing Nanostructured Phase-Change Materials.

PubMed

Zhu, Zhihua; Evans, Philip G; Haglund, Richard F; Valentine, Jason G

2017-08-09

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated and local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhu, Zhihua; Evans, Philip G.; Haglund, Richard F.

Mastering dynamic free-space spectral control and modulation in the near-infrared (NIR) and optical regimes remains a challenging task that is hindered by the available functional materials at high frequencies. In this work, we have realized an efficient metadevice capable of spectral control by minimizing the thermal mass of a vanadium dioxide phase-change material (PCM) and placing the PCM at the feed gap of a bow-tie field antenna. The device has an experimentally measured tuning range of up to 360 nm in the NIR and a modulation depth of 33% at the resonant wavelength. The metadevice is configured for integrated andmore » local heating, leading to faster switching and more precise spatial control compared with devices based on phase-change thin films. We envisage that the combined advantages of this device will open new opportunities for signal processing, memory, security, and holography at optical frequencies.« less

Highly repeatable nanoscale phase coexistence in vanadium dioxide films

NASA Astrophysics Data System (ADS)

Huffman, T. J.; Lahneman, D. J.; Wang, S. L.; Slusar, T.; Kim, Bong-Jun; Kim, Hyun-Tak; Qazilbash, M. M.

2018-02-01

It is generally believed that in first-order phase transitions in materials with imperfections, the formation of phase domains must be affected to some extent by stochastic (probabilistic) processes. The stochasticity would lead to unreliable performance in nanoscale devices that have the potential to exploit the transformation of physical properties in a phase transition. Here we show that stochasticity at nanometer length scales is completely suppressed in the thermally driven metal-insulator transition (MIT) in sputtered vanadium dioxide (V O2 ) films. The nucleation and growth of domain patterns of metallic and insulating phases occur in a strikingly reproducible way. The completely deterministic nature of domain formation and growth in films with imperfections is a fundamental and unexpected finding about the kinetics of this material. Moreover, it opens the door for realizing reliable nanoscale devices based on the MIT in V O2 and similar phase-change materials.

Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams.

PubMed

Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

2015-06-04

Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain.

Substrate-mediated strain effect on the role of thermal heating and electric field on metal-insulator transition in vanadium dioxide nanobeams

PubMed Central

Kim, Min-Woo; Jung, Wan-Gil; Hyun-Cho; Bae, Tae-Sung; Chang, Sung-Jin; Jang, Ja-Soon; Hong, Woong-Ki; Kim, Bong-Joong

2015-01-01

Single-crystalline vanadium dioxide (VO2) nanostructures have recently attracted great attention because of their single domain metal-insulator transition (MIT) nature that differs from a bulk sample. The VO2 nanostructures can also provide new opportunities to explore, understand, and ultimately engineer MIT properties for applications of novel functional devices. Importantly, the MIT properties of the VO2 nanostructures are significantly affected by stoichiometry, doping, size effect, defects, and in particular, strain. Here, we report the effect of substrate-mediated strain on the correlative role of thermal heating and electric field on the MIT in the VO2 nanobeams by altering the strength of the substrate attachment. Our study may provide helpful information on controlling the properties of VO2 nanobeam for the device applications by changing temperature and voltage with a properly engineered strain. PMID:26040637

Current induced polycrystalline-to-crystalline transformation in vanadium dioxide nanowires

PubMed Central

Jeong, Junho; Yong, Zheng; Joushaghani, Arash; Tsukernik, Alexander; Paradis, Suzanne; Alain, David; Poon, Joyce K. S.

2016-01-01

Vanadium dioxide (VO2) exhibits a reversible insulator-metal phase transition that is of significant interest in energy-efficient nanoelectronic and nanophotonic devices. In these applications, crystalline materials are usually preferred for their superior electrical transport characteristics as well as spatial homogeneity and low surface roughness over the device area for reduced scattering. Here, we show applied electrical currents can induce a permanent reconfiguration of polycrystalline VO2 nanowires into crystalline nanowires, resulting in a dramatically reduced hysteresis across the phase transition and reduced resistivity. Low currents below 3 mA were sufficient to cause the local temperature in the VO2 to reach about 1780 K to activate the irreversible polycrystalline-to-crystalline transformation. The crystallinity was confirmed by electron microscopy and diffraction analyses. This simple yet localized post-processing of insulator-metal phase transition materials may enable new methods of studying and fabricating nanoscale structures and devices formed from these materials. PMID:27892519

Active Terahertz Chiral Metamaterials Based on Phase Transition of Vanadium Dioxide (VO2).

PubMed

Wang, Shengxiang; Kang, Lei; Werner, Douglas H

2018-01-09

Compared with natural materials, chiral metamaterials have been demonstrated with orders of magnitude stronger chiroptical response, which provides the basis for applications such as ultracompact polarization components and plasmonic-enhanced biosensing. Terahertz chiral metamaterials that allow dynamic polarization control of terahertz waves are of great practical interest, but remain extremely rare. Here, we show that hybrid metamaterials integrated with vanadium dioxide (VO 2 ) exhibiting phase transition can enable dynamically tunable chiroptical responses at terahertz frequencies. In particular, a circular dichroism of ~40° and a maximum polarization rotation of ~200°/λ are observed around 0.7 THz. Furthermore, our study also reveals that the chiroptical response from the proposed metamaterials is strongly dependent on the phase transition of VO 2 , leading to actively controllable polarization states of the transmitted terahertz waves. This work paves the way for the development of terahertz metadevices capable of enabling active polarization manipulation.

Low loss millimeter-wave switches based on the Vanadium Dioxide Metal - Insulator - Transition

NASA Astrophysics Data System (ADS)

Field, Mark; Hillman, Christopher; Stupar, Philip; Griffith, Zachary; Rodwell, Mark

2014-03-01

A new ultra-low-loss and broad band millimeter wave switch technology based on the reversible metal / insulator phase transition of vanadium dioxide has been developed. We report having fabricated series configured, single-pole single-throw (SPST) switches having measured S-parameters from DC to 110 GHz. The on-state insertion loss is 0.2 dB and off-state isolation is 21 dB at 50 GHz. The resulting impedance contrast ratio, ZOFF / ZON, is greater than 500:1 at 50 GHz (i.e. cut-off frequency fc ~ 40 THz). As a demonstration of the technology's utility, we also present the results of a 2-bit real time delay phase shifter incorporating a pair of VO2 SP4T switches. This switch technology's high impedance contrast ratio combined with its compactness, ease of integration, and low voltage operation make it an enabler of previously unachievable high-performance millimeter wave FPGAs.

Microwave assisted growth of nanorods vanadium dioxide VO2 (R): structural and electrical properties

NASA Astrophysics Data System (ADS)

Derkaoui, I.; Khenfouch, M.; Mothudi, B. M.; Moloi, S. J.; Zorkani, I.; Jorio, A.; Maaza, M.

2018-03-01

Nanostructured metal oxides have attracted a lot of attention recently owning to their unique structural advantages and demonstrated promising chemical and physical properties for various applications. In this study, we report the structural and electrical properties of vanadium dioxide VO2 (R) prepared via a single reaction microwave (SRC) synthesis. Our results are revealing that the components of VO2 (R) films have a rod-like shape with a uniform size distribution. The nanorods with very smooth and flat surfaces have a typical length of up to 2μm and a width of about several nanometers. The structural investigations reveal the high crystallinity of VO2 (R) ensuring good electrical contact and showing a high conductivity as a function of temperature. This synthesis method provides a new simple route to fabricate one-dimensional nanostructured metal oxides which is suitable for a large field of applications especially for smart windows.

Transparent optically vanadium dioxide thermochromic smart film fabricated via electrospinning technique

NASA Astrophysics Data System (ADS)

Lu, Yuan; Xiao, Xiudi; Cao, Ziyi; Zhan, Yongjun; Cheng, Haoliang; Xu, Gang

2017-12-01

The monoclinic phase vanadium dioxide VO2 (M) based transparent thermochromic smart films were firstly fabricated through heat treatment of opaque VO2-based composite nanofibrous mats, which were deposited on the glass substrate via electrospinning technique. Noteworthily, the anti-oxidation property of VO2 smart film was improved due to inner distribution of VO2 in the polymethylmethacrylate (PMMA) nanofibers, and the composite mats having water contact angle of 165° determined itself good superhydrophobic property. Besides, PMMA nanofibrous mats with different polymer concentrations demonstrated changeable morphology and fiber diameter. The VO2 nanoparticles having diameter of 30-50 nm gathered and exhibited ellipse-like or belt-like structure. Additionally, the solar modulation ability of PMMA-VO2 composite smart film was 6.88% according to UV-Vis-NIR spectra. The research offered a new notion for fabricating transparent VO2 thermochromic material.

Nanocolumnar Crystalline Vanadium Oxide-Molybdenum Oxide Antireflective Smart Thin Films with Superior Nanomechanical Properties

PubMed Central

Dey, Arjun; Nayak, Manish Kumar; Esther, A. Carmel Mary; Pradeepkumar, Maurya Sandeep; Porwal, Deeksha; Gupta, A. K.; Bera, Parthasarathi; Barshilia, Harish C.; Mukhopadhyay, Anoop Kumar; Pandey, Ajoy Kumar; Khan, Kallol; Bhattacharya, Manjima; Kumar, D. Raghavendra; Sridhara, N.; Sharma, Anand Kumar

2016-01-01

Vanadium oxide-molybdenum oxide (VO-MO) thin (21–475 nm) films were grown on quartz and silicon substrates by pulsed RF magnetron sputtering technique by altering the RF power from 100 to 600 W. Crystalline VO-MO thin films showed the mixed phases of vanadium oxides e.g., V2O5, V2O3 and VO2 along with MoO3. Reversible or smart transition was found to occur just above the room temperature i.e., at ~45–50 °C. The VO-MO films deposited on quartz showed a gradual decrease in transmittance with increase in film thickness. But, the VO-MO films on silicon exhibited reflectance that was significantly lower than that of the substrate. Further, the effect of low temperature (i.e., 100 °C) vacuum (10−5 mbar) annealing on optical properties e.g., solar absorptance, transmittance and reflectance as well as the optical constants e.g., optical band gap, refractive index and extinction coefficient were studied. Sheet resistance, oxidation state and nanomechanical properties e.g., nanohardness and elastic modulus of the VO-MO thin films were also investigated in as-deposited condition as well as after the vacuum annealing treatment. Finally, the combination of the nanoindentation technique and the finite element modeling (FEM) was employed to investigate yield stress and von Mises stress distribution of the VO-MO thin films. PMID:27853234

Electrolysis-induced protonation of VO2 thin film transistor for the metal-insulator phase modulation

NASA Astrophysics Data System (ADS)

Katase, Takayoshi; Endo, Kenji; Ohta, Hiromichi

2016-02-01

Compared to state-of-the-art modulation techniques, protonation is the most ideal to control the electrical and optical properties of transition metal oxides (TMOs) due to its intrinsic non-volatile operation. However, the protonation of TMOs is not typically utilized for solid-state devices because of imperative high-temperature annealing treatment in hydrogen source. Although one solution for room temperature (RT) protonation of TMOs is liquid-phase electrochemistry, it is unsuited for practical purposes due to liquid-leakage problem. Herein we demonstrate solid-state RT-protonation of vanadium dioxide (VO2), which is a well-known thermochromic TMO. We fabricated the three terminal thin-film-transistor structure on an insulating VO2 film using a water-infiltrated nanoporous glass, which serves as a solid electrolyte. For gate voltage application, water electrolysis and protonation/deprotonation of VO2 film surface occurred, leading to reversible metal-insulator phase conversion of ~11-nm-thick VO2 layer. The protonation was clearly accompanied by the structural change from an insulating monoclinic to a metallic tetragonal phase. Present results offer a new route for the development of electro-optically active solid-state devices with TMO materials by engineering RT protonation.

Effect of S-doping on structural, optical and electrochemical properties of vanadium oxide thin films prepared by spray pyrolysis

NASA Astrophysics Data System (ADS)

Mousavi, M.; Kompany, A.; Shahtahmasebi, N.; Bagheri-Mohagheghi, M.-M.

2013-12-01

In this research, S-doped vanadium oxide thin films, with doping levels from 0 to 40 at.%, are prepared by spray pyrolysis technique on glass substrates. For electrochemical measurements, the films were deposited on florin-tin oxide coated glass substrates. The effect of S-doping on structural, electrical, optical and electrochemical properties of vanadium oxide thin films was studied. The x-ray diffractometer analysis indicated that most of the samples have cubic β-V2O5 phase structure with preferred orientation along [200]. With increase in the doping levels, the structure of the samples tends to be amorphous. The scanning electron microscopy images show that the structure of the samples is nanobelt-shaped and the width of the nanobelts decreases from nearly 100 to 40 nm with increase in the S concentration. With increase in the S-doping level, the sheet resistance and the optical band gap increase from 940 to 4015 kΩ/square and 2.41 to 2.7 eV, respectively. The cyclic voltammogram results obtained for different samples show that the undoped sample is expanded and the sample prepared at 20 at.% S-doping level has sharper anodic and cathodic peaks.

Accuracy of ab initio electron correlation and electron densities in vanadium dioxide

DOE PAGES

Kylänpää, Ilkka; Balachandran, Janakiraman; Ganesh, Panchapakesan; ...

2017-11-27

Here, diffusion quantum Monte Carlo results are used as a reference to analyze properties related to phase stability and magnetism in vanadium dioxide computed with various formulations of density functional theory. We introduce metrics related to energetics, electron densities and spin densities that give us insight on both local and global variations in the antiferromagnetic M1 and R phases. Importantly, these metrics can address contributions arising from the challenging description of the 3d orbital physics in this material. We observe that the best description of energetics between the structural phases does not correspond to the best accuracy in the charge density, which is consistent with observations made recently by Medvedev et~al. in the context of isolated atoms. However, we do find evidence that an accurate spin density connects to correct energetic ordering of different magnetic states in VOmore » $$_2$$, although local, semilocal, and meta-GGA functionals tend to erroneously favor demagnetization of the vanadium sites. The recently developed SCAN functional stands out as remaining nearly balanced in terms of magnetization across the M1-R transition and correctly predicting the ground state crystal structure. In addition to ranking current density functionals, our reference energies and densities serve as important benchmarks for future functional development.« less

Accuracy of ab initio electron correlation and electron densities in vanadium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kylänpää, Ilkka; Balachandran, Janakiraman; Ganesh, Panchapakesan

Here, diffusion quantum Monte Carlo results are used as a reference to analyze properties related to phase stability and magnetism in vanadium dioxide computed with various formulations of density functional theory. We introduce metrics related to energetics, electron densities and spin densities that give us insight on both local and global variations in the antiferromagnetic M1 and R phases. Importantly, these metrics can address contributions arising from the challenging description of the 3d orbital physics in this material. We observe that the best description of energetics between the structural phases does not correspond to the best accuracy in the charge density, which is consistent with observations made recently by Medvedev et~al. in the context of isolated atoms. However, we do find evidence that an accurate spin density connects to correct energetic ordering of different magnetic states in VOmore » $$_2$$, although local, semilocal, and meta-GGA functionals tend to erroneously favor demagnetization of the vanadium sites. The recently developed SCAN functional stands out as remaining nearly balanced in terms of magnetization across the M1-R transition and correctly predicting the ground state crystal structure. In addition to ranking current density functionals, our reference energies and densities serve as important benchmarks for future functional development.« less

Characterization and Electrochromic Properties of Vanadium Oxide Thin Films Prepared via Spray Pyrolysis

NASA Astrophysics Data System (ADS)

Mousavi, M.; Kompany, A.; Shahtahmasebi, N.; Bagheri-Mohagheghi, M.-M.

2013-08-01

Vanadium oxide thin films were grown on glass substrates using spray pyrolysis technique. The effects of substrate temperature, vanadium concentration in the initial solution and the solution spray rate on the nanostructural and the electrochromic properties of deposited films are investigated. Characterization and the electrochromic measurements were carried out using X-ray diffraction, scanning electron microscopy and cyclic voltammogram. XRD patterns showed that the prepared films have polycrystalline structure and are mostly mixed phases of orthorhombic α-V2O5 along with minor β-V2O5 and V4O9 tetragonal structures. The preferred orientation of the deposited films was found to be along [101] plane. The cyclic voltammogram results obtained for different samples showed that only the films with 0.2 M solution concentration, 5 ml/min solution spray rate and 450°C substrate temperature exhibit two-step electrochromic properties. The results show a correlation between cycle voltammogram, morphology and resistance of the films.

Local probing of thermal energy transfer and conversion processes in VO2 nanostructures

NASA Astrophysics Data System (ADS)

Menges, Fabian

Nanostructures of strongly correlated materials, such as metal-insulator transition (MIT) oxides, enable unusual coupling of charge and heat transport. Hence, they provide an interesting pathway to the development of non-linear thermal devices for active heat flux control. Here, we will report the characterization of local thermal non-equilibrium processes in vanadium dioxide (VO2) thin films and single-crystalline nanobeams. Using a scanning thermal microscope and calorimetric MEMS platforms, we studied the MIT triggered by electrical currents, electrical fields, near-field thermal radiation and thermal conduction. Based on out recently introduced scanning probe thermometry method, which enables direct imaging of local Joule and Peltier effects, we quantified self-heating processes in VO2 memristors using the tip of a resistively heated scanning probe both as local sensor and nanoscopic heat source. Finally, we will report on recent approaches to build radiative thermal switches and oscillators using VO2 nanostructures. We quantified variations of near-field radiative thermal transport between silicon dioxide and VO2 down to nanoscopic gap sizes, and will discuss its implications for the development of phonon polariton based radiative thermal devices. Funding of the Swiss Federal Office of Energy under Grant Agreement No. SI/501093-01 is gratefully acknowledged.

Structural, optical and electrochemical properties of F-doped vanadium oxide transparent semiconducting thin films

NASA Astrophysics Data System (ADS)

Mousavi, M.; Khorrami, Gh. H.; Kompany, A.; Yazdi, Sh. Tabatabai

2017-12-01

In this study, F-doped vanadium oxide thin films with doping levels up to 60 at % were prepared by spray pyrolysis method on glass substrates. To measure the electrochemical properties, some films were deposited on fluorine-tin oxide coated glass substrates. The effect of F-doping on the structural, electrical, optical and electrochemical properties of vanadium oxide samples was investigated. The X-ray diffractographs analysis has shown that all the samples grow in tetragonal β-V2O5 phase structure with the preferred orientation of [200]. The intensity of (200) peak belonging to β-V2O5 phase was strongest in the undoped vanadium oxide film. The scanning electron microscopy images show that the samples have nanorod- and nanobelt-shaped structure. The size of the nanobelts in the F-doped vanadium oxide films is smaller than that in the pure sample and the width of the nanobelts increases from 30 to 70 nm with F concentration. With increasing F-doping level from 10 to 60 at %, the resistivity, the transparency and the optical band gap decrease from 111 to 20 Ω cm, 70 to 50% and 2.4 to 2.36 eV, respectively. The cyclic voltammogram (CV) results show that the undoped sample has the most extensive CV and by increasing F-doping level from 20 to 60 at %, the area of the CV is expanded. The anodic and cathodic peaks in F-doped samples are stronger.

V6O13 films by control of the oxidation state from aqueous precursor to crystalline phase.

PubMed

Peys, Nick; Ling, Yun; Dewulf, Daan; Gielis, Sven; De Dobbelaere, Christopher; Cuypers, Daniel; Adriaensens, Peter; Van Doorslaer, Sabine; De Gendt, Stefan; Hardy, An; Van Bael, Marlies K

2013-01-28

An aqueous deposition process for V(6)O(13) films is developed whereby the vanadium oxidation state is continuously controlled throughout the entire process. In the precursor stage, a controlled wet chemical reduction of the vanadium(V) source with oxalic acid is achieved and monitored by (51)Vanadium Nuclear Magnetic Resonance ((51)V-NMR) and Ultraviolet-Visible (UV-Vis) spectroscopy. The resulting vanadium(IV) species in the aqueous solution are identified as mononuclear citrato-oxovanadate(IV) complexes by Electron Paramagnetic Resonance (EPR) and Fourier Transform Infra-Red (FTIR) spectroscopy. This precursor is successfully employed for the deposition of uniform, thin films. The optimal deposition and annealing conditions for the formation of crystalline V(6)O(13), including the control of the vanadium oxidation state, are determined through an elaborate study of processing temperature and O(2) partial pressure. To ensure a sub 100 nm adjustable film thickness, a non-oxidative intermediate thermal treatment is carried out at the end of each deposition cycle, allowing maximal precursor decomposition while still avoiding V(IV) oxidation. The resulting surface hydrophilicity, indispensable for the homogeneous deposition of the next layer, is explained by an increased surface roughness and the increased availability of surface vanadyl groups. Crystalline V(6)O(13) with a preferential (002) orientation is obtained after a post deposition annealing in a 0.1% O(2) ambient for thin films with a thickness of 20 nm.

Induced Superconductivity and Engineered Josephson Tunneling Devices in Epitaxial (111)-Oriented Gold/Vanadium Heterostructures.

PubMed

Wei, Peng; Katmis, Ferhat; Chang, Cui-Zu; Moodera, Jagadeesh S

2016-04-13

We report a unique experimental approach to create topological superconductors by inducing superconductivity into epitaxial metallic thin film with strong spin-orbit coupling. Utilizing molecular beam epitaxy technique under ultrahigh vacuum conditions, we are able to achieve (111) oriented single phase of gold (Au) thin film grown on a well-oriented vanadium (V) s-wave superconductor film with clean interface. We obtained atomically smooth Au thin films with thicknesses even down to below a nanometer showing near-ideal surface quality. The as-grown V/Au bilayer heterostructure exhibits superconducting transition at around 3.9 K. Clear Josephson tunneling and Andreev reflection are observed in S-I-S tunnel junctions fabricated from the epitaxial bilayers. The barrier thickness dependent tunneling and the associated subharmonic gap structures (SGS) confirmed the induced superconductivity in Au (111), paving the way for engineering thin film heterostructures based on p-wave superconductivity and nano devices exploiting Majorana Fermions for quantum computing.

The optical and electrochemical properties of electrochromic films: WO3+xV2O5

NASA Astrophysics Data System (ADS)

Li, Zhuying; Liu, Hui; Liu, Ye; Yang, Shaohong; Liu, Yan; Wang, Chong

2010-05-01

Since Deb's experiment in 1973 on the electrochromic effect, transmissive electrochromic films exhibit outstanding potential as energy efficient window controls which allow dynamic control of the solar energy transmission. These films with non-volatile memory, once in the coloured state, remain in the same state even after removal of the field. The optical and electrochemical properties of electrochromic films using magnetron sputter deposition tungsten oxide thin films and vanadium oxide doped tungsten-vanadium oxide thin films on ITO coated glass were investigated. From the UV region of the transmittance spectra, the optical band gap energy from the fundamental absorption edge can be determined. And the Cyclic voltammograms of these thin films in 1 mol LiClO4 propylene carbonate electrolyte (LIPC) were measured and analysed. The anode electrochromic V2O5 doped cathode electrochromic WO3 could make films colour changing while the transmittance of films keeped invariance. These performance characteristics make tungstenvanadium oxide colour changeably thin films are suitable for electrochromic windows applications.

Effect of tungsten implantation on the switching parameters in V2O5 films

NASA Astrophysics Data System (ADS)

Burdyukh, S. V.; Berezina, O. Ya.; Pergament, A. L.

2017-11-01

The paper examines the effect of doping with tungsten on switching in hydrated vanadium pentoxide films. The switching effect is associated with the metal-insulator transition in a vanadium dioxide channel that forms in the initial film due to the process of electrical forming (EF). Doping is carried out by the plasma immersion ion implantation method. It is shown that implanting small tungsten doses improves the switching parameters after EF. When implanting large doses, switching is observed without EF, and if EF is applied, the switching effect, on the contrary, disappears.

Investigation of physicochemical and tribological properties of transparent oxide semiconducting thin films based on Ti-V oxides

NASA Astrophysics Data System (ADS)

Mazur, M.; Sieradzka, K.; Kaczmarek, D.; Domaradzki, J.; Wojcieszak, D.; Domanowski, P.

2013-08-01

In this paper investigations of structural and optical properties of nanocrystalline Ti-V oxide thin films are described. The films were deposited onto Corning 7059 glass using a modified reactive magnetron sputtering method. Structural investigations of prepared Ti-V oxides with vanadium addition of 19 at. % revealed amorphous structure, while incorporation of 21 and 23 at. % of vanadium resulted in V2O5 formation with crystallites sizes of 12.7 and 32.4 nm, respectively. All prepared thin films belong to transparent oxide semiconductors due to their high transmission level of ca. 60-75 % in the visible light range, and resistivity in the range of 3.3·102-1.4·105 Ωcm. Additionally, wettability and hardness tests were performed in order to evaluate the usefulness of the films for functional coatings.

Stress compensation for arbitrary curvature control in vanadium dioxide phase transition actuators

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dong, Kaichen, E-mail: dkc12@mails.tsinghua.edu.cn, E-mail: wuj@berkeley.edu; Materials Sciences Division, Lawrence Berkeley National Laboratory, Berkeley, California 94720; State Key Laboratory of Precision Measurement Technology and Instruments, Department of Precision Instrument, Tsinghua University, Beijing 100084

2016-07-11

Due to its thermally driven structural phase transition, vanadium dioxide (VO{sub 2}) has emerged as a promising material for micro/nano-actuators with superior volumetric work density, actuation amplitude, and repetition frequency. However, the high initial curvature of VO{sub 2} actuators severely obstructs the actuation performance and application. Here, we introduce a “seesaw” method of fabricating tri-layer cantilevers to compensate for the residual stress and realize nearly arbitrary curvature control of VO{sub 2} actuators. By simply adjusting the thicknesses of the individual layers, cantilevers with positive, zero, or negative curvatures can be engineered. The actuation amplitude can be decoupled from the curvaturemore » and controlled independently as well. Based on the experimentally measured residual stresses, we demonstrate sub-micron thick VO{sub 2} actuators with nearly zero final curvature and a high actuation amplitude simultaneously. This “seesaw” method can be further extended to the curvature engineering of other microelectromechanical system multi-layer structures where large stress-mismatch between layers are inevitable.« less

Variable electrical properties in composites: Application to vanadium dioxide pigments in a polyethylene host

DOE Office of Scientific and Technical Information (OSTI.GOV)

Alfred-Duplan, C.; Musso, J.; Gavarri, J.R.

1994-05-01

Composite pellets were prepared from low-density polyethylene (LDPE) and vanadium dioxide powders. The VO[sub 2] pigments are used for their insulating-to-metallic transition at 341 K in order to obtain electrically variable composite materials. The volume fractions of VO[sub 2] powders vary from [phi] = 0 to [phi] = 0.55. The composite samples are characterized by X-ray diffraction and scanning electron microscopy. Complex impedance analysis in the frequency range 10[sup [minus]1] to 10[sup 6]. Hz is carried out at room temperature and at T = 363 K, to observe the insulator-metal transition of VO[sub 2] pigments dispersed in the polymer host.more » The variation of the complex impedance modulus [vert bar]Z[vert bar] with frequency and with VO[sub 2] volume fraction ([phi]) is discussed. A specific (R, C) impedance model permits interpretation of the experimental results in terms of percolation; the observed variations can be accounted for.« less

Investigation on onset voltage and conduction channel temperature in voltage-induced metal-insulator transition of vanadium dioxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yoon, Joonseok; Kim, Howon; Ju, Honglyoul, E-mail: tesl@yonsei.ac.kr

2016-03-28

The characteristics of onset voltages and conduction channel temperatures in the metal-insulator transition (MIT) of vanadium dioxide (VO{sub 2}) devices are investigated as a function of dimensions and ambient temperature. The MIT onset voltage varies from 18 V to 199 V as the device length increases from 5 to 80 μm at a fixed width of 100 μm. The estimated temperature at local conduction channel increases from 110 to 370 °C, which is higher than the MIT temperature (67 °C) of VO{sub 2}. A simple Joule-heating model is employed to explain voltage-induced MIT as well as to estimate temperatures of conduction channel appearing after MIT inmore » various-sized devices. Our findings on VO{sub 2} can be applied to micro- to nano-size tunable heating devices, e.g., microscale scanning thermal cantilevers and gas sensors.« less

Plasma assisted synthesis of vanadium pentoxide nanoplates

NASA Astrophysics Data System (ADS)

Singh, Megha; Sharma, Rabindar Kumar; Kumar, Prabhat; Reddy, G. B.

2015-08-01

In this work, we report the growth of α-V2O5 (orthorhombic) nanoplates on glass substrate using plasma assisted sublimation process (PASP) and Nickel as catalyst. 100 nm thick film of Ni is deposited over glass substrate by thermal evaporation process. Vanadium oxide nanoplates have been deposited treating vanadium metal foil under high vacuum conditions with oxygen plasma. Vanadium foil is kept at fixed temperature growth of nanoplates of V2O5 to take place. Samples grown have been studied using XPS, XRD and HRTEM to confirm the growth of α-phase of V2O5, which revealed pure single crystal of α- V2O5 in orthorhombic crystallographic plane. Surface morphological studies using SEM and TEM show nanostructured thin film in form of plates. Uniform, vertically aligned randomly oriented nanoplates of V2O5 have been deposited.

Inhomogeneity of the ultrafast insulator-to-metal transition dynamics of VO2.

PubMed

O'Callahan, Brian T; Jones, Andrew C; Hyung Park, Jae; Cobden, David H; Atkin, Joanna M; Raschke, Markus B

2015-04-21

The insulator-metal transition (IMT) of vanadium dioxide (VO2) has remained a long-standing challenge in correlated electron physics since its discovery five decades ago. Most interpretations of experimental observations have implicitly assumed a homogeneous material response. Here we reveal inhomogeneous behaviour of even individual VO2 microcrystals using pump-probe microscopy and nanoimaging. The timescales of the ultrafast IMT vary from 40±8 fs, that is, shorter than a suggested phonon bottleneck, to 200±20 fs, uncorrelated with crystal size, transition temperature and initial insulating structural phase, with average value similar to results from polycrystalline thin-film studies. In combination with the observed sensitive variations in the thermal nanodomain IMT behaviour, this suggests that the IMT is highly susceptible to local changes in, for example, doping, defects and strain. Our results suggest an electronic mechanism dominating the photoinduced IMT, but also highlight the difficulty to deduce microscopic mechanisms when the true intrinsic material response is yet unclear.

Voltage-induced switching dynamics based on an AZO/VO2/AZO sandwiched structure

NASA Astrophysics Data System (ADS)

Xiao, Han; Li, Yi; Fang, Baoying; Wang, Xiaohua; Liu, Zhimin; Zhang, Jiao; Li, Zhengpeng; Huang, Yaqin; Pei, Jiangheng

2017-11-01

A vanadium dioxide (VO2) thin film was prepared on an Al-doped ZnO (AZO) conductive glass substrate by DC magnetron sputtering and a post-annealing process. The AZO/VO2/AZO sandwiched structure was fabricated on the VO2/AZO composite film using photolithography and a chemical etching process. The composition, microstructure and optical properties of the VO2/AZO composite film were tested. The results showed that the VO2/AZO composite film was poly-crystalline and the AZO layer did not change the preferred growth orientation of VO2. When the voltage was applied on both of the transparent conductive layers of the AZO/VO2/AZO sandwiched structure, an abrupt change in the current was observed at different temperatures. The temperature dependence of I-V characteristic curves for the AZO/VO2/AZO sandwiched structure was analyzed. The phase transition voltage value is 7.5 V at 20 °C and decreases with increasing temperature.

Flexible thermochromic window based on hybridized VO2/graphene.

PubMed

Kim, Hyeongkeun; Kim, Yena; Kim, Keun Soo; Jeong, Hu Young; Jang, A-Rang; Han, Seung Ho; Yoon, Dae Ho; Suh, Kwang S; Shin, Hyeon Suk; Kim, TaeYoung; Yang, Woo Seok

2013-07-23

Large-scale integration of vanadium dioxide (VO2) on mechanically flexible substrates is critical to the realization of flexible smart window films that can respond to environmental temperatures to modulate light transmittance. Until now, the formation of highly crystalline and stoichiometric VO2 on flexible substrate has not been demonstrated due to the high-temperature condition for VO2 growth. Here, we demonstrate a VO2-based thermochromic film with unprecedented mechanical flexibility by employing graphene as a versatile platform for VO2. The graphene effectively functions as an atomically thin, flexible, yet robust support which enables the formation of stoichiometric VO2 crystals with temperature-driven phase transition characteristics. The graphene-supported VO2 was capable of being transferred to a plastic substrate, forming a new type of flexible thermochromic film. The flexible VO2 films were then integrated into the mock-up house, exhibiting its efficient operation to reduce the in-house temperature under infrared irradiation. These results provide important progress for the fabrication of flexible thermochromic films for energy-saving windows.

Monolithic Silicon Microbolometer Materials forUncooled Infrared Detectors

DTIC Science & Technology

2015-05-21

L. Allara, Mark W. Horn. Vanadium Oxide Thin Films Alloyed with Ti, Zr , Nb , and Mo for Uncooled Infrared Imaging Applications, Journal of...entitled "Thin Film Materials and Devices for Resistive Temperature Sensing Applications" by Hitesh Basantani and the other entitled "Reactive...extension. One was entitled "Thin Film Materials and Devices for Resistive Temperature Sensing Applications" by Hitesh Basantani and the other

Superior selectivity and enhanced response characteristics of palladium sensitized vanadium pentoxide nanorods for detection of nitrogen dioxide gas.

PubMed

Mane, A A; Suryawanshi, M P; Kim, J H; Moholkar, A V

2017-06-01

Vanadium pentoxide (V 2 O 5 ) nanorods have been deposited onto the glass substrates by spraying 75ml of 30mM vanadium trichloride (VCl 3 ) solution at optimized substrate temperature of 400°C. The XRD study confirms the formation of orthorhombic crystal structure of V 2 O 5 nanorods. The FE-SEM micrograph shows the nanorods-like morphology of V 2 O 5 . The presence of palladium (Pd) in the Pd-sensitized V 2 O 5 nanorods is confirmed using EDAX study. The gas sensing measurements show that the Pd-sensitized V 2 O 5 sensing material is an outstanding candidate for nitrogen dioxide (NO 2 ) gas detection. Obtained results demonstrate that the Pd-sensitized V 2 O 5 nanorods show the superior selectivity for NO 2 gas in comparison with other gases such as NH 3 , H 2 S, CO, CO 2 and SO 2 at an operating temperature of 200°C. It shows the 75% response for 100ppm NO 2 gas concentration with response and recovery times of 22s and 126s, respectively. Finally, the gas sensing mechanism based on chemisorption process is proposed to illustrate how Pd nanoparticles affect the gas sensing characteristics (response and response-recovery times). Copyright © 2017 Elsevier Inc. All rights reserved.

Enhanced electrical and noise properties of nanocomposite vanadium oxide thin films by reactive pulsed-dc magnetron sputtering

NASA Astrophysics Data System (ADS)

Basantani, H. A.; Kozlowski, S.; Lee, Myung-Yoon; Li, J.; Dickey, E. C.; Jackson, T. N.; Bharadwaja, S. S. N.; Horn, M.

2012-06-01

Thin films of VOx (1.3 ≤ x ≤ 2) were deposited by reactive pulsed-dc magnetron sputtering of a vanadium metal target while RF-biasing the substrate. Rutherford back scattering, glancing angle x-ray, and cross-sectional transmission electron microscopy measurements revealed the formation of nanocolumns with nanotwins within VOx samples. The resistivity of nanotwinned VOx films ranged from 4 mΩ.cm to 0.6 Ω.cm and corresponding temperature coefficient of resistance between -0.1% and -2.6% per K, respectively. The 1/f electrical noise was analyzed in these VOx samples using the Hooge-Vandamme relation. These VOx films are comparable or surpass commercial VOx films deposited by ion beam sputtering.

Van der Waals MoS2/VO2 heterostructure junction with tunable rectifier behavior and efficient photoresponse.

PubMed

Oliva, Nicoló; Casu, Emanuele Andrea; Yan, Chen; Krammer, Anna; Rosca, Teodor; Magrez, Arnaud; Stolichnov, Igor; Schueler, Andreas; Martin, Olivier J F; Ionescu, Adrian Mihai

2017-10-27

Junctions between n-type semiconductors of different electron affinity show rectification if the junction is abrupt enough. With the advent of 2D materials, we are able to realize thin van der Waals (vdW) heterostructures based on a large diversity of materials. In parallel, strongly correlated functional oxides have emerged, having the ability to show reversible insulator-to-metal (IMT) phase transition by collapsing their electronic bandgap under a certain external stimulus. Here, we report for the first time the electronic and optoelectronic characterization of ultra-thin n-n heterojunctions fabricated using deterministic assembly of multilayer molybdenum disulphide (MoS 2 ) on a phase transition material, vanadium dioxide (VO 2 ). The vdW MoS 2 /VO 2 heterojunction combines the excellent blocking capability of an n-n junction with a high conductivity in on-state, and it can be turned into a Schottky rectifier at high applied voltage or at temperatures higher than 68 °C, exploiting the metal state of VO 2 . We report tunable diode-like current rectification with a good diode ideality factor of 1.75 and excellent conductance swing of 120 mV/dec. Finally, we demonstrate unique tunable photosensitivity and excellent junction photoresponse in the 500/650 nm wavelength range.

Facile Phase Control of Multivalent Vanadium Oxide Thin Films (V2O5 and VO2) by Atomic Layer Deposition and Postdeposition Annealing.

PubMed

Song, Gwang Yeom; Oh, Chadol; Sinha, Soumyadeep; Son, Junwoo; Heo, Jaeyeong

2017-07-19

Atomic layer deposition was adopted to deposit VO x thin films using vanadyl tri-isopropoxide {VO[O(C 3 H 7 )] 3 , VTIP} and water (H 2 O) at 135 °C. The self-limiting and purge-time-dependent growth behaviors were studied by ex situ ellipsometry to determine the saturated growth conditions for atomic-layer-deposited VO x . The as-deposited films were found to be amorphous. The structural, chemical, and optical properties of the crystalline thin films with controlled phase formation were investigated after postdeposition annealing at various atmospheres and temperatures. Reducing and oxidizing atmospheres enabled the formation of pure VO 2 and V 2 O 5 phases, respectively. The possible band structures of the crystalline VO 2 and V 2 O 5 thin films were established. Furthermore, an electrochemical response and a voltage-induced insulator-to-metal transition in the vertical metal-vanadium oxide-metal device structure were observed for V 2 O 5 and VO 2 films, respectively.

Influence of oxygen flow rate on metal-insulator transition of vanadium oxide thin films grown by RF magnetron sputtering

NASA Astrophysics Data System (ADS)

Ma, Xu; Liu, Xinkun; Li, Haizhu; Zhang, Angran; Huang, Mingju

2017-03-01

High-quality vanadium oxide ( VO2) films have been fabricated on Si (111) substrates by radio frequency (RF) magnetron sputtering deposition method. The sheet resistance of VO2 has a significant change (close to 5 orders of magnitude) in the process of the metal-insulator phase transition (MIT). The field emission-scanning electron microscope (FE-SEM) results show the grain size of VO2 thin films is larger with the increase of oxygen flow. The X-ray diffraction (XRD) results indicate the thin films fabricated at different oxygen flow rates grow along the (011) crystalline orientation. As the oxygen flow rate increases from 3 sccm to 6 sccm, the phase transition temperature of the films reduces from 341 to 320 K, the width of the thermal hysteresis loop decreases from 32 to 9 K. The thin films fabricated in the condition of 5 sccm have a high temperature coefficient of resistance (TCR) -3.455%/K with a small resistivity of 2.795 ρ/Ω cm.

Vanadium Redox Flow Batteries Using meta-Polybenzimidazole-Based Membranes of Different Thicknesses.

PubMed

Noh, Chanho; Jung, Mina; Henkensmeier, Dirk; Nam, Suk Woo; Kwon, Yongchai

2017-10-25

15, 25, and 35 μm thick meta-polybenzimidazole (PBI) membranes are doped with H 2 SO 4 and tested in a vanadium redox flow battery (VRFB). Their performances are compared with those of Nafion membranes. Immersed in 2 M H 2 SO 4 , PBI absorbs about 2 mol of H 2 SO 4 per mole of repeat unit. This results in low conductivity and low voltage efficiency (VE). In ex-situ tests, meta-PBI shows a negligible crossover of V 3+ and V 4+ ions, much lower than that of Nafion. This is due to electrostatic repulsive forces between vanadium cations and positively charged protonated PBI backbones, and the molecular sieving effect of PBI's nanosized pores. It turns out that charge efficiency (CE) of VRFBs using meta-PBI-based membranes is unaffected by or slightly increases with decreasing membrane thickness. Thick meta-PBI membranes require about 100 mV larger potentials to achieve the same charging current as thin meta-PBI membranes. This additional potential may increase side reactions or enable more vanadium ions to overcome the electrostatic energy barrier and to enter the membrane. On this basis, H 2 SO 4 -doped meta-PBI membranes should be thin to achieve high VE and CE. The energy efficiency of 15 μm thick PBI reaches 92%, exceeding that of Nafion 212 and 117 (N212 and N117) at 40 mA cm -2 .

Dependence of annealing temperature on microstructure and photoelectrical properties of vanadium oxide thin films prepared by DC reactive sputtering

NASA Astrophysics Data System (ADS)

Li, Yan; Zhang, Dongping; Wang, Bo; Liang, Guangxing; Zheng, Zhuanghao; Luo, Jingting; Cai, Xingmin; Fan, Ping

2013-12-01

Vanadium oxide thin films were prepared by DC reactive sputtering method, and the samples were annealed in Ar atmosphere under different temperature for 2 hours. The microstructure, optical and electrical properties of the as-grown and treated samples were characterized by XRD, spectrophotometer, and four-probe technique, respectively. XRD results investigated that the main content of the annealed sample are VO2 and V2O5. With annealing temperature increasing, the intensity of the VO2 phase diffraction peak strengthened. The electrical properties reveal that the annealed samples exhibit semiconductor-to-metal transition characteristic at about 40°C. Comparison of transmission spectra of the samples at room temperature and 100°C, a drastic drop in IR region is found.

Fabrication and design of vanadium oxide microbolometer

NASA Astrophysics Data System (ADS)

Abdel-Rahman, M.; Al-Khalli, N.; Zia, M. F.; Alduraibi, M.; Ilahi, B.; Awad, E.; Debbar, N.

2017-02-01

Vanadium oxide (VxOy) multilayer sandwich structures previously studied by our group were found to yield a sensitive thermometer thin film material suitable for microbolometer applications. In this work, we aim to estimate the performance of a proposed air-bridge microbolometer configuration based on VxOy multilayer sandwich structure thermometer thin films. For this purpose, a microbolometer was fabricated on silicon (Si) substrate covered with a silicon nitride (Si3N4) insulating layer using VxOy thermometer thin film material. The fabricated microbolometer was patterned using electron-beam lithography and liftoff techniques and it was characterized in terms of its voltage repsonsivity (Rv), signal to noise ratio (SNR), noise equivalent power (NEP) and detectivity D*. A model was then developed by the aid of numerical optical/thermal simulations and experimentally measured parameters to estimate the performance of the microbolometer when fabricated in an air-bridge configuration. The estimated D* was found to be 1.55×107 cm.√Hz/ W.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Astrophysics Data System (ADS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-06-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Deposition of vanadium oxide films by direct-current magnetron reactive sputtering

NASA Technical Reports Server (NTRS)

Kusano, E.; Theil, J. A.; Thornton, John A.

1988-01-01

It is demonstrated here that thin films of vanadium oxide can be deposited at modest substrate temperatures by dc reactive sputtering from a vanadium target in an O2-Ar working gas using a planar magnetron source. Resistivity ratios of about 5000 are found between a semiconductor phase with a resistivity of about 5 Ohm cm and a metallic phase with a resistivity of about 0.001 Ohm cm for films deposited onto borosilicate glass substrates at about 400 C. X-ray diffraction shows the films to be single-phase VO2 with a monoclinic structure. The VO2 films are obtained for a narrow range of O2 injection rates which correspond to conditions where cathode poisoning is just starting to occur.

Phase diagram of the ultrafast photoinduced insulator-metal transition in vanadium dioxide

NASA Astrophysics Data System (ADS)

Cocker, T. L.; Titova, L. V.; Fourmaux, S.; Holloway, G.; Bandulet, H.-C.; Brassard, D.; Kieffer, J.-C.; El Khakani, M. A.; Hegmann, F. A.

2012-04-01

We use time-resolved terahertz spectroscopy to probe the ultrafast dynamics of the insulator-metal phase transition induced by femtosecond laser pulses in a nanogranular vanadium dioxide (VO2) film. Based on the observed thresholds for characteristic transient terahertz dynamics, a phase diagram of critical pump fluence versus temperature for the insulator-metal phase transition in VO2 is established for the first time over a broad range of temperatures down to 17 K. We find that both Mott and Peierls mechanisms are present in the insulating state and that the photoinduced transition is nonthermal. We propose a critical-threshold model for the ultrafast photoinduced transition based on a critical density of electrons and a critical density of coherently excited phonons necessary for the structural transition to the metallic state. As a result, evidence is found at low temperatures for an intermediate metallic state wherein the Mott state is melted but the Peierls distortion remains intact, consistent with recent theoretical predictions. Finally, the observed terahertz conductivity dynamics above the photoinduced transition threshold reveal nucleation and growth of metallic nanodomains over picosecond time scales.

Modulated scattering technique in the terahertz domain enabled by current actuated vanadium dioxide switches

PubMed Central

Vitale, W. A.; Tamagnone, M.; Émond, N.; Le Drogoff, B.; Capdevila, S.; Skrivervik, A.; Chaker, M.; Mosig, J. R.; Ionescu, A. M.

2017-01-01

The modulated scattering technique is based on the use of reconfigurable electromagnetic scatterers, structures able to scatter and modulate an impinging electromagnetic field in function of a control signal. The modulated scattering technique is used in a wide range of frequencies up to millimeter waves for various applications, such as field mapping of circuits or antennas, radio-frequency identification devices and imaging applications. However, its implementation in the terahertz domain remains challenging. Here, we describe the design and experimental demonstration of the modulated scattering technique at terahertz frequencies. We characterize a modulated scatterer consisting in a bowtie antenna loaded with a vanadium dioxide switch, actuated using a continuous current. The modulated scatterer behavior is demonstrated using a time domain terahertz spectroscopy setup and shows significant signal strength well above 0.5 THz, which makes this device a promising candidate for the development of fast and energy-efficient THz communication devices and imaging systems. Moreover, our experiments allowed us to verify the operation of a single micro-meter sized VO2 switch at terahertz frequencies, thanks to the coupling provided by the antenna. PMID:28145523

Preparation and investigation of sputtered vanadium dioxide films with large phase-transition hysteresis loops

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; He, Qiong; Jiang, Yadong

2013-07-01

Vanadium dioxide (VO2) films with large phase-transition hysteresis loops were fabricated on glass substrates by reactive direct current (DC) magnetron sputtering in Ar/O2 atmosphere and subsequent in situ annealing process in pure oxygen. The crystal structure, chemical composition, morphology and metal-insulator transition (MIT) properties of the deposited films were investigated. The results reveal that the films show a polycrystalline nature with a (0 1 1) preferred orientation and consist of small spheroidal nanoparticles. All the deposited VO2 films show large hysteresis loops due to the small density of nucleating defects and the large interfacial energies, which are determined by the characteristics of the particles in the films, namely the small transversal grain size and the spheroidal shape. The film comprising the smallest spheroidal nanoparticles not only shows a large hysteresis width of 36.3 °C but also shows a low transition temperature of 32.2 °C upon cooling. This experiment facilitates the civilian applications of the VO2 films on glass substrates in optical storage-type devices.

Electrochemically Induced Insulator-Metal-Insulator Transformations of Vanadium Dioxide Nanocrystal Films

NASA Astrophysics Data System (ADS)

Milliron, Delia; Dahlman, Clayton; Leblanc, Gabriel; Bergerud, Amy

Vanadium dioxide (VO2) undergoes significant optical, electronic, and structural changes as it transforms between the low-temperature monoclinic and high-temperature rutile phases. The low-temperature state is insulating and transparent, while the high-temperature state is metallic and IR blocking. Alternative stimuli have been utilized to trigger insulator-to-metal transformations in VO2, including electrochemical gating. Here, VO2 nanocrystal films have been prepared by solution deposition of V2O3 nanocrystals followed by oxidative annealing. Nanocrystalline VO2 films are electrochemically reduced, inducing changes in their electronic and optical properties. We observe a reversible transition between infrared transparent insulating phases and a darkened metallic phase by in situ visible-near-infrared spectroelectrochemistry and correlate these observations with structural and electronic changes monitored by X-ray absorption spectroscopy, X-ray diffraction, Raman spectroscopy, and conductivity measurements. Reduction causes an initial transformation to a metallic, IR-colored distorted monoclinic phase. However, an unexpected reversible transition from conductive, reduced monoclinic VO2 to an infrared-transparent insulating phase is observed upon further reduction.

Chromium–niobium co-doped vanadium dioxide films: Large temperature coefficient of resistance and practically no thermal hysteresis of the metal–insulator transition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Miyazaki, Kenichi, E-mail: kenichi-miyazaki@denso.co.jp, E-mail: k.shibuya@aist.go.jp; University of Tsukuba, Tsukuba 305-8571; Shibuya, Keisuke, E-mail: kenichi-miyazaki@denso.co.jp, E-mail: k.shibuya@aist.go.jp

We investigated the effects of chromium (Cr) and niobium (Nb) co-doping on the temperature coefficient of resistance (TCR) and the thermal hysteresis of the metal–insulator transition of vanadium dioxide (VO{sub 2}) films. We determined the TCR and thermal-hysteresis-width diagram of the V{sub 1−x−y}Cr{sub x}Nb{sub y}O{sub 2} films by electrical-transport measurements and we found that the doping conditions x ≳ y and x + y ≥ 0.1 are appropriate for simultaneously realizing a large TCR value and an absence of thermal hysteresis in the films. By using these findings, we developed a V{sub 0.90}Cr{sub 0.06}Nb{sub 0.04}O{sub 2} film grown on amore » TiO{sub 2}-buffered SiO{sub 2}/Si substrate that showed practically no thermal hysteresis while retaining a large TCR of 11.9%/K. This study has potential applications in the development of VO{sub 2}-based uncooled bolometers.« less

Photo-driven nanoactuators based on carbon nanocoils and vanadium dioxide bimorphs.

PubMed

Ma, He; Zhang, Xinping; Cui, Ruixue; Liu, Feifei; Wang, Meng; Huang, Cuiying; Hou, Jiwei; Wang, Guang; Wei, Yang; Jiang, Kaili; Pan, Lujun; Liu, Kai

2018-06-06

Photo-driven actuators are highly desirable in various smart systems owing to the advantages of wireless control and possible actuation by solar energy. Miniaturization of photo-driven actuators is particularly essential in micro-robotics and micro-/nano-electro-mechanical systems. However, it remains a great challenge to build up nano-scale photo-driven actuators with competitive performance in amplitude, response speed, and lifetime. In this work, we developed photo-driven nanoactuators based on bimorph structures of vanadium dioxides (VO2) and carbon nanocoils (CNCs). Activated by the huge structural phase transition of VO2, the photo-driven VO2/CNC nanoactuators deliver a giant amplitude, a fast response up to 9400 Hz, and a long lifetime more than 10 000 000 actuation cycles. Both experimental and simulation results show that the helical structure of CNCs enables a low photo-driven threshold of VO2/CNC nanoactuators, which provides an effective method to construct photo-driven nanoactuators with low power consumption. Our photo-driven VO2/CNC nanoactuators would find potential applications in nano-scale electrical/optical switches and other smart devices.

Photoinduced surface plasmon switching at VO2/Au interface.

PubMed

Kumar, Nardeep; Rúa, Armando; Aldama, Jennifer; Echeverría, Karla; Fernández, Félix E; Lysenko, Sergiy

2018-05-28

Angle-resolved reflection, light scattering and ultrafast pump-probe spectroscopy combined with a surface plasmon-polariton (SPP) resonance technique in attenuated total reflection geometry was used to investigate the light-induced plasmonic switching in a photorefractive VO 2 /Au hybrid structure. Measurements of SPP scattering and reflection shows that the optically-induced formation of metallic state in a vanadium dioxide layer deposited on a gold film significantly alters the electromagnetic field enhancement and SPP propagation length at the VO 2 /Au interface. The ultrafast optical manipulation of SPP resonance is shown on a picosecond timescale. Obtained results demonstrate high potential of photorefractive vanadium oxides as efficient plasmonic modulating materials for ultrafast optoelectronic devices.

Effectively suppressing vanadium permeation in vanadium redox flow battery application with modified Nafion membrane with nacre-like nanoarchitectures

NASA Astrophysics Data System (ADS)

Zhang, Lesi; Ling, Ling; Xiao, Min; Han, Dongmei; Wang, Shuanjin; Meng, Yuezhong

2017-06-01

A novel self-assembled composite membrane, Nafion-[PDDA/ZrP]n with nacre-like nanostructures was successfully fabricated by a layer-by-layer (LbL) method and used as proton exchange membrane for vanadium redox flow battery applications. Poly(diallyldimethylammonium chloride) (PDDA) with positive charges and zirconium phosphate (ZrP) nanosheets with negative charges can form ultra-thin nacre-like nanostructure on the surface of Nafion membrane via the ionic crosslinking of tightly folded macromolecules. The lamellar structure of ZrP nanosheets and Donnan exclusion effect of PDDA can greatly decrease the vanadium ion permeability and improve the selectivity of proton conductivity. The fabricated Nafion-[PDDA/ZrP]4 membrane shows two orders of magnitude lower vanadium ion permeability (1.05 × 10-6 cm2 min-1) and 12 times higher ion selectivity than those of pristine Nafion membrane at room temperature. Consequently, the performance of vanadium redox flow batteries (VRFBs) assembled with Nafion-[PDDA/ZrP]3 membrane achieved a highly coulombic efficiency (CE) and energy efficiency (EE) together with a very slow self-discharge rate. When comparing with pristine Nafion VRFB, the CE and EE values of Nafion-[PDDA/ZrP]3 VRFB are 10% and 7% higher at 30 mA cm-2, respectively.

Ultrafast Dynamics in Vanadium Dioxide: Separating Spatially Segregated Mixed Phase Dynamics in the Time-domain

NASA Astrophysics Data System (ADS)

Hilton, David

2011-10-01

In correlated electronic systems, observed electronic and structural behavior results from the complex interplay between multiple, sometimes competing degrees-of- freedom. One such material used to study insulator-to-metal transitions is vanadium dioxide, which undergoes a phase transition from a monoclinic-insulating phase to a rutile-metallic phase when the sample is heated to 340 K. The major open question with this material is the relative influence of this structural phase transition (Peirels transition) and the effects of electronic correlations (Mott transition) on the observed insulator-to-metal transition. Answers to these major questions are complicated by vanadium dioxide's sensitivity to perturbations in the chemical structure in VO2. For example, related VxOy oxides with nearly a 2:1 ratio do not demonstrate the insulator-to- metal transition, while recent work has demonstrated that W:VO2 has demonstrated a tunable transition temperature controllable with tungsten doping. All of these preexisting results suggest that the observed electronic properties are exquisitely sensitive to the sample disorder. Using ultrafast spectroscopic techniques, it is now possible to impulsively excite this transition and investigate the photoinduced counterpart to this thermal phase transition in a strongly nonequilibrium regime. I will discuss our recent results studying the terahertz-frequency conductivity dynamics of this photoinduced phase transition in the poorly understood near threshold temperature range. We find a dramatic softening of the transition near the critical temperature, which results primarily from the mixed phase coexistence near the transition temperature. To directly study this mixed phase behavior, we directly study the nucleation and growth rates of the metallic phase in the parent insulator using non-degenerate optical pump-probe spectroscopy. These experiments measure, in the time- domain, the coexistent phase separation in VO2 (spatially separated insulator and metal islands) and, more importantly, their dynamic evolution in response to optical excitation.

Solution-processed phase-change VO(2) metamaterials from colloidal vanadium oxide (VO(x)) nanocrystals.

PubMed

Paik, Taejong; Hong, Sung-Hoon; Gaulding, E Ashley; Caglayan, Humeyra; Gordon, Thomas R; Engheta, Nader; Kagan, Cherie R; Murray, Christopher B

2014-01-28

We demonstrate thermally switchable VO2 metamaterials fabricated using solution-processable colloidal nanocrystals (NCs). Vanadium oxide (VOx) NCs are synthesized through a nonhydrolytic reaction and deposited from stable colloidal dispersions to form NC thin films. Rapid thermal annealing transforms the VOx NC thin films into monoclinic, nanocrystalline VO2 thin films that show a sharp, reversible metal-insulator phase transition. Introduction of precise concentrations of tungsten dopings into the colloidal VOx NCs enables the still sharp phase transition of the VO2 thin films to be tuned to lower temperatures as the doping level increases. We fabricate "smart", differentially doped, multilayered VO2 films to program the phase and therefore the metal-insulator behavior of constituent vertically structured layers with temperature. With increasing temperature, we tailored the optical response of multilayered films in the near-IR and IR regions from that of a strong light absorber, in a metal-insulator structure, to that of a Drude-like reflector, characteristic of a pure metallic structure. We demonstrate that nanocrystal-based nanoimprinting can be employed to pattern multilayered subwavelength nanostructures, such as three-dimensional VO2 nanopillar arrays, that exhibit plasmonic dipolar responses tunable with a temperature change.

Deposition and characterization of vanadium oxide based thin films for MOS device applications

NASA Astrophysics Data System (ADS)

Rakshit, Abhishek; Biswas, Debaleen; Chakraborty, Supratic

2018-04-01

Vanadium Oxide films are deposited on Si (100) substrate by reactive RF-sputtering of a pure Vanadium metallic target in an Argon-Oxygen plasma environment. The ratio of partial pressures of Argon to Oxygen in the sputtering-chamber is varied by controlling their respective flow rates and the resultant oxide films are obtained. MOS Capacitor based devices are then fabricated using the deposited oxide films. High frequency Capacitance-Voltage (C-V) and gate current-gate voltage (I-V) measurements reveal a significant dependence of electrical characteristics of the deposited films on their sputtering deposition parameters mainly, the relative content of Argon/Oxygen in the plasma chamber. A noteworthy change in the electrical properties is observed for the films deposited under higher relative oxygen content in the plasma atmosphere. Our results show that reactive sputtering serves as an indispensable deposition-setup for fabricating vanadium oxide based MOS devices tailor-made for Non-Volatile Memory (NVM) applications.

Method and apparatus for stable silicon dioxide layers on silicon grown in silicon nitride ambient

NASA Technical Reports Server (NTRS)

Cohen, R. A.; Wheeler, R. K. (Inventor)

1974-01-01

A method and apparatus for thermally growing stable silicon dioxide layers on silicon is disclosed. A previously etched and baked silicon nitride tube placed in a furnace is used to grow the silicon dioxide. First, pure oxygen is allowed to flow through the tube to initially coat the inside surface of the tube with a thin layer of silicon dioxide. After the tube is coated with the thin layer of silicon dioxide, the silicon is oxidized thermally in a normal fashion. If the tube becomes contaminated, the silicon dioxide is etched off thereby exposing clean silicon nitride and then the inside of the tube is recoated with silicon dioxide. As is disclosed, the silicon nitride tube can also be used as the ambient for the pyrolytic decomposition of silane and ammonia to form thin layers of clean silicon nitride.

Power sources for search and rescue 406 MHz beacons

NASA Technical Reports Server (NTRS)

Attia, Alan I.; Perrone, David E.

1987-01-01

The results of a study directed at the selection of a commercially available, safe, low cost, light weight and long storage life battery for search and rescue (Sarsat) 406 MHz emergency beacons are presented. In the course of this work, five electrochemical systems (lithium-manganese dioxide, lithium-carbon monofluoride, lithium-silver vanadium oxide, alkaline cells, and cadmium-mercuric oxide) were selected for limited experimental studies to determine their suitability for this application. Two safe, commercially available batteries (lithium-manganese dioxide and lithium-carbon monofluoride) which meet the near term requirements and several alternatives for the long term were identified.

Ultrahigh-Power Pseudocapacitors Based on Ordered Porous Heterostructures of Electron-Correlated Oxides.

PubMed

Lang, Xing-You; Liu, Bo-Tian; Shi, Xiang-Mei; Li, Ying-Qi; Wen, Zi; Jiang, Qing

2016-05-01

Nanostructured transition-metal oxides can store high-density energy in fast surface redox reactions, but their poor conductivity causes remarkable reductions in the energy storage of most pseudocapacitors at high power delivery (fast charge/discharge rates). Here it is shown that electron-correlated oxide hybrid electrodes made of nanocrystalline vanadium sesquioxide and manganese dioxide with 3D and bicontinuous nanoporous architecture (NP V 2 O 3 /MnO 2 ) have enhanced conductivity because of metallization of electron-correlated V 2 O 3 skeleton via insulator-to-metal transition. The conductive V 2 O 3 skeleton at ambient temperature enables fast electron and ion transports in the entire electrode and facilitates charge transfer at abundant V 2 O 3 /MnO 2 interface. These merits significantly improve the pseudocapacitive behavior and rate capability of the constituent MnO 2 . Symmetric pseudocapacitors assembled with binder-free NP V 2 O 3 /MnO 2 electrodes deliver ultrahigh electrical powers (up to ≈422 W cm 23 ) while maintaining the high volumetric energy of thin-film lithium battery with excellent stability.

Superconducting and Magnetic Properties of Vanadium/iron Superlattices.

NASA Astrophysics Data System (ADS)

Wong, Hong-Kuen

A novel ultrahigh vacuum evaporator was constructed for the preparation of superlattice samples. The thickness control was much better than an atomic plane. With this evaporator we prepared V/Fe superlattice samples on (0001) sapphire substrates with different thicknesses. All samples showed a good bcc(110) structure. Mossbauer experiments showed that the interface mixing extended a distance of about one atomic plane indicating an almost rectangular composition profile. Because of this we were able to prepare samples with layer thickness approaching one atomic plane. Even with ultrathin Fe layers, the samples are ferromagnetic, at least at lower temperatures. Superparamagnetism and spin glass states were not seen. In the absence of an external field, the magnetic moments lie close to the film plane. In addition to this shape anisotropy, there is some uniaxial anisotropy. No magnetic dead layers have been observed. The magnetic moments within the Fe layers vary little with the distance from the interfaces. At the interfaces the Fe moment is reduced and an antiparallel moment is induced on the vanadium atoms. It is observed that ultrathin Fe layers behave in a 2D fashion when isolated by sufficiently thick vanadium layers; however, on thinning the vanadium layers, a magnetic coupling between the Fe layers has been observed. We also studied the superconducting properties of V/Fe sandwiches and superlattices. In both cases, the Fe layer, a strong pair-breaker, suppresses the superconducting transition temperature consistent with the current knowledge of the magnetic proximity effect. For the sandwiches with thin (thick) vanadium layers, the temperature dependence of the upper critical fields is consistent with the simple theory for a 2D (3D) superconductor. For the superlattices, when the vanadium layer is on the order of the BCS coherence length and the Fe layer is only a few atomic planes thick, a 2D-3D crossover has been observed in the temperature dependence of the parallel upper critical field. This implies the coexistence of superconductivity and ferromagnetism. We observe three dimensional behavior for thinner Fe layers ((TURN)1 atomic plane) and two dimensional behavior for thicker Fe layers (greater than 10 atomic planes).

Accuracy of ab initio electron correlation and electron densities in vanadium dioxide

NASA Astrophysics Data System (ADS)

Kylänpää, Ilkka; Balachandran, Janakiraman; Ganesh, Panchapakesan; Heinonen, Olle; Kent, Paul R. C.; Krogel, Jaron T.

2017-11-01

Diffusion quantum Monte Carlo results are used as a reference to analyze properties related to phase stability and magnetism in vanadium dioxide computed with various formulations of density functional theory. We introduce metrics related to energetics, electron densities and spin densities that give us insight on both local and global variations in the antiferromagnetic M1 and R phases. Importantly, these metrics can address contributions arising from the challenging description of the 3 d orbital physics in this material. We observe that the best description of energetics between the structural phases does not correspond to the best accuracy in the charge density, which is consistent with observations made recently by Medvedev et al. [Science 355, 371 (2017), 10.1126/science.aag0410] in the context of isolated atoms. However, we do find evidence that an accurate spin density connects to correct energetic ordering of different magnetic states in VO2, although local, semilocal, and meta-GGA functionals tend to erroneously favor demagnetization of the vanadium sites. The recently developed SCAN functional stands out as remaining nearly balanced in terms of magnetization across the M1-R transition and correctly predicting the ground state crystal structure. In addition to ranking current density functionals, our reference energies and densities serve as important benchmarks for future functional development. With our reference data, the accuracy of both the energy and the electron density can be monitored simultaneously, which is useful for functional development. So far, this kind of detailed high accuracy reference data for correlated materials has been absent from the literature.

Atomic layer deposition of VO2 films with Tetrakis-dimethyl-amino vanadium (IV) as vanadium precursor

NASA Astrophysics Data System (ADS)

Lv, Xinrui; Cao, Yunzhen; Yan, Lu; Li, Ying; Song, Lixin

2017-02-01

VO2 thin films have been grown on Si(100) (VO2/Si) and fused silica substrates (VO2/SiO2) by atomic layer deposition (ALD) using tetrakis-dimethyl-amino vanadium (IV) (TDMAV) as a novel vanadium precursor and water as reactant gas. The quartz crystal microbalance (QCM) measurement was performed to study the ALD process of VO2 thin film deposition, and a constant growth rate of about 0.95 Å/cycle was obtained at the temperature range of 150-200 °C. XRD measurement was performed to study the influence of deposition temperature and post-annealing condition on the crystallization of VO2 films, which indicated that the films deposited between 150 and 200 °C showed well crystallinity after annealing at 475 °C for 100 min in Ar atmosphere. XPS measurement verified that the vanadium oxidation state was 4+ for both as-deposited film and post-annealed VO2/Si film. AFM was applied to study the surface morphology of VO2/Si films, which showed a dense polycrystalline film with roughness of about 1 nm. The resistance of VO2/Si films deposited between 150 °C and 200 °C as a function of temperature showed similar semiconductor-to-metal transition (SMT) characters with the transition temperature for heating branch (Tc,h) of about 72 °C, a hysteresis width of about 10 °C and the resistance change of two orders of magnitude. The increase of Tc,h compared with the bulk VO2 (68 °C) may be attributed to the tensile stress along the c-axis in the film. Transmittance measurement of VO2/SiO2 films showed typical thermochromic property with a NIR switching efficiency of above 50% at 2 μm across the transition.

Nanometer-thick flat lens with adjustable focus

DOE Office of Scientific and Technical Information (OSTI.GOV)

Son, T. V.; Haché, A.; Ba, C. O. F.

2014-12-08

We report laser beam focusing by a flat, homogeneous film with a thickness of less than 100 nm. The effect relies on refractive index changes occurring in vanadium dioxide as it undergoes a phase transition from insulator to metal. Phase front curvature is achieved by means of temperature gradients, and adjustable focal lengths from infinity to 30 cm are attained.

Vanadium Oxide Thin Film Formation on Graphene Oxide by Microexplosive Decomposition of Ammonium Peroxovanadate and Its Application as a Sodium Ion Battery Anode.

PubMed

Mikhaylov, Alexey A; Medvedev, Alexander G; Grishanov, Dmitry A; Sladkevich, Sergey; Gun, Jenny; Prikhodchenko, Petr V; Xu, Zhichuan J; Nagasubramanian, Arun; Srinivasan, Madhavi; Lev, Ovadia

2018-02-27

Formation of vanadium oxide nanofilm-coated graphene oxide (GO) is achieved by thermally induced explosive disintegration of a microcrystalline ammonium peroxovanadate-GO composite. GO sheets isolate the microcrystalline grains and capture and contain the microexplosion products, resulting in the deposition of the nanoscale products on the GO. Thermal treatment of the supported nanofilm yields a sequence of nanocrystalline phases of vanadium oxide (V 3 O 7 , VO 2 ) as a function of temperature. This is the first demonstration of microexplosive disintegration of a crystalline peroxo compound to yield a nanocoating. The large number of recently reported peroxide-rich crystalline materials suggests that the process can be a useful general route for nanofilm formation. The V 3 O 7 @GO composite product was tested as a sodium ion battery anode and showed high charge capacity at high rate charge-discharge cycling (150 mAh g -1 at 3000 mA g -1 vs 300 mAh g -1 at 100 mA g -1 ) due to the nanomorphology of the vanadium oxide.

Determination of the Mass Absorption Coefficient in Two-Layer Ti/V and V/Ti Thin Film Systems by the X-Ray Fluorescence Method

NASA Astrophysics Data System (ADS)

Mashin, N. I.; Chernyaeva, E. A.; Tumanova, A. N.; Gafarova, L. M.

2016-03-01

A new XRF procedure for the determination of the mass absorption coefficient in thin film Ti/V and V/Ti two-layer systems has been proposed. The procedure uses easy-to-make thin-film layers of sputtered titanium and vanadium on a polymer film substrate. Correction coefficients have been calculated that take into account attenuation of primary radiation of the X-ray tube, as well as attenuation of the spectral line of the bottom layer element in the top layer.

Computational studies of small neutral vanadium oxide clusters and their reactions with sulfur dioxide

NASA Astrophysics Data System (ADS)

Jakubikova, Elena; He, Sheng-Gui; Xie, Yan; Matsuda, Yoshiyuki; Bernstein, Elliot

2007-03-01

Vanadium oxide is a catalytic system that plays an important role in the conversion of SO2 to SO3. Density functional theory at the BPW91/LANL2DZ level is employed to obtain structures of VOy (y=1,,5), V2Oy (y=2,,7), V3Oy (y=4,,9), V4Oy (y=7,,12) and their complexes with SO2. BPW91/LANL2DZ is insufficient to describe properly relative V-O and S-O bond strengths of vanadium and sulfur oxides. Calibration of theoretical results with experimental data is necessary to compute enthalpies of reactions between VxOy and SO2. Theoretical results indicate SO2 to SO conversion occurs for oxygen-deficient clusters and SO2 to SO3 conversion occurs for oxygen-rich clusters. Subsequent experimental studies confirm the presence of SO in the molecular beam as well as the presence of VxOy complexes with SO2. Some possible mechanisms for SO3 formation and catalyst regeneration for solids are also suggested.

Microstructural and opto-electrical properties of chromium nitride films implanted with vanadium ions

NASA Astrophysics Data System (ADS)

Novaković, M.; Traverse, A.; Popović, M.; Lieb, K. P.; Zhang, K.; Bibić, N.

2012-07-01

We report on modifications of 280-nm thin polycrystalline CrN layers caused by vanadium ion implantation. The CrN layers were deposited at 150°C by d.c. reactive sputtering on Si(100) wafers and then implanted at room temperature with 80-keV V+ ions to fluences of 1×1017 and 2×1017 ions/cm2. Rutherford backscattering spectroscopy, cross-sectional transmission electron microscopy, and X-ray diffraction were used to characterize changes in the structural properties of the films. Their optical and electrical properties were analyzed by infrared spectroscopy in reflection mode and electrical resistivity measurements. CrN was found to keep its cubic structure under the conditions of vanadium ion implantation used here. The initially partially non-metallic CrN layer displays metallic character under implantation, which may be related to the possible formation of Cr1-x V x N.

Ultrafast Silicon-based Modulators using Optical Switching of Vanadium Dioxide

DTIC Science & Technology

2014-12-04

demonstrated by using photothermal heating to induce the VO2 semiconductor-to- metal phase transition and modulate the transmitted optical signal...speeds. By utilizing the sub-picosecond semiconductor-to- metal transition (SMT) in VO2 as the active switching mechanism that enables direct... metallic phases. The steep slope, high contrast, and relatively narrow hysteresis exhibited by these reflectivity measurements indicate the high quality

Energy, Power & Interconnect Technologies Division Overview

DTIC Science & Technology

2010-02-26

Indiana University, Bloomington, IN, February 26, 2010 14. ABSTRACT 15. SUBJECT TERMS 16. SECURITY CLASSIFICATION OF: 17. LIMITATION OF...Battery Expertise Alkaline (Sealed/Vented) Lithium (Reserve/Active) Thermal Aluminum-Oxygen (Air) Cadmium -Oxygen (Air) Carbon-Zinc Mercury- Cadmium M Zi...Iron Nickel- Cadmium Nickel-Hydrogen Oxyhalide Polymer Sulfur Dioxide Sulfuryl Chloride Thionyl Chloride V di P t id um con o a su e Magnesium/Vanadium

Silicon waveguide optical switch with embedded phase change material.

PubMed

Miller, Kevin J; Hallman, Kent A; Haglund, Richard F; Weiss, Sharon M

2017-10-30

Phase-change materials (PCMs) have emerged as promising active elements in silicon (Si) photonic systems. In this work, we design, fabricate, and characterize a hybrid Si-PCM optical switch. By integrating vanadium dioxide (a PCM) within a Si photonic waveguide, in a non-resonant geometry, we achieve ~10 dB broadband optical contrast with a PCM length of 500 nm using thermal actuation.

Different threshold and bipolar resistive switching mechanisms in reactively sputtered amorphous undoped and Cr-doped vanadium oxide thin films

NASA Astrophysics Data System (ADS)

Rupp, Jonathan A. J.; Querré, Madec; Kindsmüller, Andreas; Besland, Marie-Paule; Janod, Etienne; Dittmann, Regina; Waser, Rainer; Wouters, Dirk J.

2018-01-01

This study investigates resistive switching in amorphous undoped and Cr-doped vanadium oxide thin films synthesized by sputtering deposition at low oxygen partial pressure. Two different volatile threshold switching characteristics can occur as well as a non-volatile bipolar switching mechanism, depending on device stack symmetry and Cr-doping. The two threshold switching types are associated with different crystalline phases in the conduction filament created during an initial forming step. The first kind of threshold switching, observed for undoped vanadium oxide films, was, by its temperature dependence, proven to be associated with a thermally triggered insulator-to-metal transition in a crystalline VO2 phase, whereas the threshold switch observed in chromium doped films is stable up to 90 °C and shows characteristics of an electronically induced Mott transition. This different behaviour for undoped versus doped films has been attributed to an increased stability of V3+ due to the Cr3+ doping (as evidenced by X-ray photoelectron spectroscopy analysis), probably favouring the creation of a crystalline Cr-doped V2O3 phase (rather than a Cr-doped VO2 phase) during the energetic forming step. The symmetric Pt/a-(VCr)Ox/Pt device showing high temperature stable threshold switching may find interesting applications as a possible new selector device for resistive switching memory (ReRAM) crossbar arrays.

Investigation of activation cross-sections of deuteron induced reactions on vanadium up to 40 MeV

NASA Astrophysics Data System (ADS)

Tárkányi, F.; Ditrói, F.; Takács, S.; Hermanne, A.; Baba, M.; Ignatyuk, A. V.

2011-08-01

Experimental excitation functions for deuteron induced reactions up to 40 MeV on natural vanadium were measured with the activation method using a stacked foil irradiation technique. From high resolution gamma spectrometry cross-section data for the production of 51Cr, 48V, 48,47,46Sc and 47Ca were determined. Comparisons with the earlier published data are presented and results for values predicted by different theoretical codes are included. Thick target yields were calculated from a fit to our experimental excitation curves and compared with the earlier experimental data. Depth distribution curves used for thin layer activation (TLA) are also presented.

Growth of different V2O5 nanostructures as a function of deposition duration

NASA Astrophysics Data System (ADS)

Saini, Sujit K.; Sharma, Rabindar K.; Singh, Megha; Kumar, Prabhat; Reddy, G. B.

2018-05-01

Vanadium pentoxide nanostructured thin films are synthesized using plasma assisted sublimation process (PASP). The effect of deposition duration on the growth of V2O5 nanostructured thin films (NSTs) is studied in present paper. Raman and XRD results depict that all films exhibited only orthorhombic crystalline phase of vanadium oxide (i.e. V2O5). As duration increases the growth of V2O5 nanostructures preferentially aligned along (101) crystallographic plane. Scanning electron micrographs show that different morphologies are obtained with different duration of deposition. For low durations (i.e. 30 and 40 min.) the 1D nanostructures with random alignments are obtained, whereas for prolonged durations of deposition (50 and 60 min) the embedded nanopillers having vertical alignments with uniform distribution on entire substrate are found. The occurrence of remarkable increase in visible radiation from 8% to 13% on increasing duration again implies that the crystallinity and alignments of V2O5 nanostructures is getting improved with duration.

Structural and electrical properties of different vanadium oxide phases in thin film form synthesized using pulsed laser deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majid, S. S., E-mail: suhailphy276@gmail.com; Rahman, F.; Shukla, D. K.

2015-06-24

We present here the structural and electrical properties of the thin films of V{sub 2}O{sub 3} (Vanadium sesquioxide) and V{sub 5}O{sub 9}. Both these oxide phases, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}, have beenachieved on (001) orientedSi substrate using the V{sub 2}O{sub 5} target by optimizing the deposition parameters using pulsed laser deposition technique (PLD).Deposited films were characterized by X-ray diffraction(XRD)and four probe temperature dependent resistivity measurements. XRD studies reveal the V{sub 2}O{sub 3} and V{sub 5}O{sub 9} phases and the amount of strain present in both these films. The temperature dependency of electrical resistivity confirmed the characteristic metal-insulatormore » transitions (MIT) for both the films, V{sub 2}O{sub 3} and V{sub 5}O{sub 9}.« less

Metal-insulator transition properties of sputtered silicon-doped and un-doped vanadium dioxide films at terahertz range

NASA Astrophysics Data System (ADS)

Zhang, Huafu; Wu, Zhiming; Niu, Ruihua; Wu, Xuefei; he, Qiong; Jiang, Yadong

2015-03-01

Silicon-doped and un-doped vanadium dioxide (VO2) films were synthesized on high-purity single-crystal silicon substrates by means of reactive direct current magnetron sputtering followed by thermal annealing. The structure, morphology and metal-insulator transition properties of silicon-doped VO2 films at terahertz range were measured and compared to those of un-doped VO2 films. X-ray diffraction and scanning electron microscopy indicated that doping the films with silicon significantly affects the preferred crystallographic orientation and surface morphologies (grain size, pores and characteristics of grain boundaries). The temperature dependence of terahertz transmission shows that the transition temperature, hysteresis width and transition sharpness greatly depend on the silicon contents while the transition amplitude was relatively insensitive to the silicon contents. Interestingly, the VO2 film doped with a silicon content of 4.6 at.% shows excellent terahertz switching characteristics, namely a small hysteresis width of 4.5 °C, a giant transmission modulation ratio of about 82% and a relatively low transition temperature of 56.1 °C upon heating. This work experimentally indicates that silicon doping can effectively control not only the surface morphology but also the metal-insulator transition characteristics of VO2 films at terahertz range.

The metal-insulator triple point in vanadium dioxide

NASA Astrophysics Data System (ADS)

Cobden, David

2014-03-01

The metal-insulator transition (MIT) in vanadium dioxide is a candidate for optical and electrical switching applications. However, being a first-order solid-state phase transition makes it challenging to study reproducibly in any detail. The combination of the change in unit cell shape, symmetry reduction, long range of elastic distortion, and latent heat leads to domain structure, hysteresis, and cracking of even the highest quality samples. At the MIT two stable insulating phases (M1 and M2) occur in addition to the metallic phase (R), but their phase stability diagram was poorly known. To establish it precisely we studied single-crystal nanobeams of VO2 in a purpose-built nanomechanical strain apparatus. We were able to measure the transition temperature accurately to be 65.0 +- 0.1 oC, to determine the phase boundary slopes, and to detect the intermediate metastable triclinic (T) phase where it is metastable towards M2. We were surprised to find that the transition occurs precisely at the solid-state triple point of the metallic and two insulating phases, a fact that is not explained by existing theories. See J.H. Park et al, Nature 500, 431-4 (August 2013), doi:10.1038/nature12425. Supported by US Department of Energy, Office of Basic Energy Sciences, Division of Materials Science and Engineering, award DE-SC0002197.

Metallization of vanadium dioxide driven by large phonon entropy

DOE PAGES

Budai, John D.; Hong, Jiawang; Manley, Michael E.; ...

2014-11-10

Phase competition underlies many remarkable and technologically important phenomena in transition-metal oxides. Vanadium dioxide exhibits a first-order metal-insulator transition (MIT) near room temperature, where conductivity is suppressed and the lattice changes from tetragonal to monoclinic on cooling. Ongoing attempts to explain this coupled structural and electronic transition begin with two classic starting points: a Peierls MIT driven by instabilities in electron-lattice dynamics versus a Mott MIT where strong electron-electron correlations drive charge localization1-10. A key-missing piece of the VO2 puzzle is the role of lattice vibrations. Moreover, a comprehensive thermodynamic treatment must integrate both entropic and energetic aspects of themore » transition. Our measurements establish that the entropy driving the MIT is dominated by strongly anharmonic phonons rather than electronic contributions, and provide a direct determination of phonon dispersions. Our calculations identify softer bonding as the origin of the large vibrational entropy stabilizing the metallic rutile phase. They further reveal how a balance between higher entropy in the metal and orbital-driven lower energy in the insulator fully describes the thermodynamic forces controlling the MIT. This study illustrates the critical role of anharmonic lattice dynamics in metal-oxide phase competition, and provides guidance for the predictive design of new materials.« less

Vanadium dioxide film protected with an atomic-layer-deposited Al{sub 2}O{sub 3} thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Xiao; Cao, Yunzhen, E-mail: yzhcao@mail.sic.ac.cn; Yang, Chao

2016-01-15

A VO{sub 2} film exposed to ambient air is prone to oxidation, which will degrade its thermochromic properties. In this work, the authors deposited an ultrathin Al{sub 2}O{sub 3} film with atomic layer deposition (ALD) to protect the underlying VO{sub 2} film from degradation, and then studied the morphology and crystalline structure of the films. To assess the protectiveness of the Al{sub 2}O{sub 3} capping layer, the authors performed a heating test and a damp heating test. An ultrathin 5-nm-thick ALD Al{sub 2}O{sub 3} film was sufficient to protect the underlying VO{sub 2} film heated at 350 °C. However, in amore » humid environment at prolonged durations, a thicker ALD Al{sub 2}O{sub 3} film (15 nm) was required to protect the VO{sub 2}. The authors also deposited and studied a TiO{sub 2}/Al{sub 2}O{sub 3} bilayer, which significantly improved the protectiveness of the Al{sub 2}O{sub 3} film in a humid environment.« less

Electronic structure of HxVO2 probed with in-situ spectroscopic ellipsometry

NASA Astrophysics Data System (ADS)

Kim, So Yeun; Sandilands, Luke J.; Kang, Taedong; Son, Jaeseok; Sohn, C. H.; Yoon, Hyojin; Son, Junwoo; Moon, S. J.; Noh, T. W.

Vanadium dioxide (VO2) undergoes a metal-to-insulator transition (MIT) near 340K. Despite extensive studies on this material, the role of electron-electron correlation and electron-lattice interactions in driving this MIT is still under debate. Recently, it was demonstrated that hydrogen can be reversibly absorbed into VO2 thin film without destroying the lattice framework. This H-doping allows systematic control of the electron density and lattice structure which in turn leads to a insulator (VO2) - metal (HxVO2) - insulator (HVO2) phase modulation. To better understand the phase modulation of HxVO2, we used in-situ spectroscopic ellipsometry to monitor the electronic structure during the hydrogenization process, i.e. we measured the optical conductivity of HxVO2 while varying x. Starting in the high temperature rutile metallic phase of VO2, we observed a large change in the electronic structure upon annealing in H gas at 370K: the low energy conductivity is continuously suppressed, consistent with reported DC resistivity data, while the conductivity peaks at high energy show strong changes in energy and spectral weight. The implications of our results for the MIT in HxVO2 will be discussed.

Thermal tuning of infrared resonant absorbers based on hybrid gold-VO{sub 2} nanostructures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kocer, Hasan; Department of Electrical Engineering, Turkish Military Academy, 06654 Ankara; Butun, Serkan

2015-04-20

Resonant absorbers based on plasmonic materials, metamaterials, and thin films enable spectrally selective absorption filters, where absorption is maximized at the resonance wavelength. By controlling the geometrical parameters of nano/microstructures and materials' refractive indices, resonant absorbers are designed to operate at wide range of wavelengths for applications including absorption filters, thermal emitters, thermophotovoltaic devices, and sensors. However, once resonant absorbers are fabricated, it is rather challenging to control and tune the spectral absorption response. Here, we propose and demonstrate thermally tunable infrared resonant absorbers using hybrid gold-vanadium dioxide (VO{sub 2}) nanostructure arrays. Absorption intensity is tuned from 90% to 20%more » and 96% to 32% using hybrid gold-VO{sub 2} nanowire and nanodisc arrays, respectively, by heating up the absorbers above the phase transition temperature of VO{sub 2} (68 °C). Phase change materials such as VO{sub 2} deliver useful means of altering optical properties as a function of temperature. Absorbers with tunable spectral response can find applications in sensor and detector applications, in which external stimulus such as heat, electrical signal, or light results in a change in the absorption spectrum and intensity.« less

Enhancement of electrical transport modulation in epitaxial VO2 nanowire field-effect transistor

NASA Astrophysics Data System (ADS)

Tanaka, Hidekazu; Chikanari, Masashi; Kanki, Teruo

Strongly correlated system vanadium dioxide VO2 has attracted widespread concerns from researchers as an exciting electronic material, due to the many intriguing features, especially metal-insulator transition (MIT) in vicinity of room temperature. In this work, we report a diverse geometry for high sensitivity in the transport modulation. By taking advantage of nanometer scale channel, instead of thin film channels, we demonstrated the enhancement of resistance modulation by applying gate voltage. Also we designed the insulating gate, consisting of high-k material Ta2O5/organic polymer parylene-C hybrid insulator. Such as this hybrid gate dielectric would effectively reduce interface deterioration of active channel oxide and provide sufficient carrier density. Moreover, benefited from the nanometer scale channel, the VO2 nanowire-based transistor could deliver a resistance modulation ratio over 8.5%, which are about 10 folds higher than that of the film case. Furthermore, this result is explained that in spite of the stronger field distribution in the edge parts of VO2 nanowire channel yielded little carrier density, the generated mobility modulation would biquadratic increase according to Brinkman-Rice picture as new finding.

High capacity electrode materials for batteries and process for their manufacture

DOEpatents

Johnson, Christopher S.; Xiong, Hui; Rajh, Tijana; Shevchenko, Elena; Tepavcevic, Sanja

2018-04-03

The present invention provides a nanostructured metal oxide material for use as a component of an electrode in a lithium-ion or sodium-ion battery. The material comprises a nanostructured titanium oxide or vanadium oxide film on a metal foil substrate, produced by depositing or forming a nanostructured titanium dioxide or vanadium oxide material on the substrate, and then charging and discharging the material in an electrochemical cell from a high voltage in the range of about 2.8 to 3.8 V, to a low voltage in the range of about 0.8 to 1.4 V over a period of about 1/30 of an hour or less. Lithium-ion and sodium-ion electrochemical cells comprising electrodes formed from the nanostructured metal oxide materials, as well as batteries formed from the cells, also are provided.

Studies on Molecular and Ion Transport in Silicalite Membranes and Applications as Ion Separator for Redox Flow Battery

NASA Astrophysics Data System (ADS)

Yang, Ruidong

Microporous zeolite membranes have been widely studied for molecular separations based on size exclusion or preferential adsorption-diffusion mechanisms. The MFI-type zeolite membranes were also demonstrated for brine water desalination by molecular sieving effect. In this research, the pure silica MFI-type zeolite (i.e. silicalite) membrane has been for the first time demonstrated for selective permeation of hydrated proton (i.e. H3O+) in acidic electrolyte solutions. The silicalite membrane allows for permeation of H 3O+ ions, but is inaccessible to the large hydrated multivalent vanadium ions due to steric effect. The silicalite membrane has been further demonstrated as an effective ion separator in the all-vanadium redox flow battery (RFB).The silicalite is nonionic and its proton conductivity relies on the electric field-driven H3O+ transport through the sub nanometer-sized pores under the RFB operation conditions. The silicalite membrane displayed a significantly reduced self-discharge rate because of its high proton-to-vanadium ion transport selectivity. However, the nonionic nature of the silicalite membrane and very small diffusion channel size render low proton conductivity and is therefore inefficient as ion exchange membranes (IEMs) for practical applications. The proton transport efficiency may be improved by reducing the membrane thickness. However, the zeolite thin films are extremely fragile and must be supported on mechanically strong and rigid porous substrates. In this work, silicalite-Nafion composite membranes were synthesized to achieve a colloidal silicalite skin on the Nafion thin film base. The "colloidal zeolite-ionic polymer" layered composite membrane combines the advantages of high proton-selectivity of the zeolite layer and the mechanical flexibility and low proton transport resistance of the ionic polymer membrane. The composite membrane exhibited higher proton/vanadium ion separation selectivity and lower electrical resistance than the commercial Nafion 117 membrane. The high proton transport selectivity is a result of the molecular sieving effect between the H3O+ and multivalent vanadium ions by the zeolitic pores; thus the zeolite particles significantly reduced the effective membrane surface area for vanadium ion permeation. The low resistance of the composite membrane can be attributed to the reduced thickness of the Nafion base film and the thinness of the colloidal silicalite top layer. The composite membrane outperformed the Nafion 117 membrane in the vanadium RFB operation in terms of the overall charge-discharge energy efficiency. Efforts have been made in further investigation of ion and molecular transport diffusivity in the polycrystalline silicalite film using zeolite-coated optical fiber interferometers. A physical model has been established for analyzing the molecular diffusivity in the zeolite layer based on the temporal responses of the optical interferometric signals during the transient process of molecular sorption. Experiments were first carried out to study the diffusivity of isobutane to evaluate the effectiveness of the proposed optical method. The isobutane diffusivities in silicalite measured by this method were in good agreement with the values reported in literature. The zeolite coated fiber optic interferometer was however ineffective in monitoring ion sorption or ion exchange in the silicalite films. It is suggested that more sensitive fiber optic devices are needed for studying the ion diffusion.

A Highly Ion-Selective Zeolite Flake Layer on Porous Membranes for Flow Battery Applications.

PubMed

Yuan, Zhizhang; Zhu, Xiangxue; Li, Mingrun; Lu, Wenjing; Li, Xianfeng; Zhang, Huamin

2016-02-24

Zeolites are crystalline microporous aluminosilicates with periodic arrangements of cages and well-defined channels, which make them very suitable for separating ions of different sizes, and thus also for use in battery applications. Herein, an ultra-thin ZSM-35 zeolite flake was introduced onto a poly(ether sulfone) based porous membrane. The pore size of the zeolite (ca. 0.5 nm) is intermediary between that of hydrated vanadium ions (>0.6 nm) and protons (<0.24 nm). The resultant membrane can thus be used to perfectly separate vanadium ions and protons, making this technology useful in vanadium flow batteries (VFB). A VFB with a zeolite-coated membrane exhibits a columbic efficiency of >99 % and an energy efficiency of >81 % at 200 mA cm(-2), which is by far the highest value ever reported. These convincing results indicate that zeolite-coated membranes are promising in battery applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Epitaxial growth of VO2 by periodic annealing

NASA Astrophysics Data System (ADS)

Tashman, J. W.; Lee, J. H.; Paik, H.; Moyer, J. A.; Misra, R.; Mundy, J. A.; Spila, T.; Merz, T. A.; Schubert, J.; Muller, D. A.; Schiffer, P.; Schlom, D. G.

2014-02-01

We report the growth of ultrathin VO2 films on rutile TiO2 (001) substrates via reactive molecular-beam epitaxy. The films were formed by the cyclical deposition of amorphous vanadium and its subsequent oxidation and transformation to VO2 via solid-phase epitaxy. Significant metal-insulator transitions were observed in films as thin as 2.3 nm, where a resistance change ΔR/R of 25 was measured. Low angle annular dark field scanning transmission electron microscopy was used in conjunction with electron energy loss spectroscopy to study the film/substrate interface and revealed the vanadium to be tetravalent and the titanium interdiffusion to be limited to 1.6 nm.

Reduction of V2O5 thin films deposited by aqueous sol-gel method to VO2(B) and investigation of its photocatalytic activity

NASA Astrophysics Data System (ADS)

Monfort, Olivier; Roch, Tomas; Satrapinskyy, Leonid; Gregor, Maros; Plecenik, Tomas; Plecenik, Andrej; Plesch, Gustav

2014-12-01

A way of preparation of VO2(B) thin films by reduction of V2O5 films synthesized from an aqueous sol-gel system has been developed and photocatalytic properties of the obtained films were studied. The reduction was performed by annealing of the V2O5 film in vacuum as well as in H2/Ar atmosphere, which was followed by temperature dependent XRD. It has been shown that the reduction is influenced by the layered-structure of the vanadium oxides. It is a two-step process, where the mixed-valence vanadium oxide V4O9 is first formed before reaching the VO2(B) phase. The film microstructure was characterized by SEM and AFM and the valence states of vanadium in VO2(B) films were evaluated by XPS. The VO2(B) polymorph shows an energy band-gap around 2.8 eV and it exhibits photocatalytic properties. It was measured by following the degradation of rhodamine B under UVA as well as metalhalogenide lamp irradiation, which has similar spectral distribution as natural sunlight. The VO2(B) films show distinct photoactivities under both lamps, although they were found to be more active under the UVA irradiation. The film annealed under reducing hydrogen atmosphere, which exhibits higher granularity and surface roughness, shows higher photoactivity than the vacuum-annealed film.

Process optimization for diffusion bonding of tungsten with EUROFER97 using a vanadium interlayer

NASA Astrophysics Data System (ADS)

Basuki, Widodo Widjaja; Aktaa, Jarir

2015-04-01

Solid-state diffusion bonding is a selected joining technology to bond divertor components consisting of tungsten and EUROFER97 for application in fusion power plants. Due to the large mismatch in their coefficient of thermal expansions, which leads to serious thermally induced residual stresses after bonding, a thin vanadium plate is introduced as an interlayer. However, the diffusion of carbon originated from EUROFER97 in the vanadium interlayer during the bonding process can form a vanadium carbide layer, which has detrimental influences on the mechanical properties of the joint. For optimal bonding results, the thickness of this layer and the residual stresses has to be decreased sufficiently without a significant reduction of material transport especially at the vanadium/tungsten interface, which can be achieved by varying the diffusion bonding temperature and duration. The investigation results show that at a sufficiently low bonding temperature of 700 °C and a bonding duration of 4 h, the joint reaches a reasonable high ductility and toughness especially at elevated test temperature of 550 °C with elongation to fracture of 20% and mean absorbed Charpy impact energy of 2 J (using miniaturized Charpy impact specimens). The strength of the bonded materials is about 332 MPa at RT and 291 MPa at 550 °C. Furthermore, a low bonding temperature of 700 °C can also help to avoid the grain coarsening and the alteration of the grain structure especially of the EUROFER97 close to the bond interface.

Thermal oxidation of silicon in a residual oxygen atmosphere—the RESOX process—for self-limiting growth of thin silicon dioxide films

NASA Astrophysics Data System (ADS)

Wright, Jason T.; Carbaugh, Daniel J.; Haggerty, Morgan E.; Richard, Andrea L.; Ingram, David C.; Kaya, Savas; Jadwisienczak, Wojciech M.; Rahman, Faiz

2016-10-01

We describe in detail the growth procedures and properties of thermal silicon dioxide grown in a limited and dilute oxygen atmosphere. Thin thermal oxide films have become increasingly important in recent years due to the continuing down-scaling of ultra large scale integration metal oxide silicon field effect transistors. Such films are also of importance for organic transistors where back-gating is needed. The technique described here is novel and allows self-limited formation of high quality thin oxide films on silicon surfaces. This technique is easy to implement in both research laboratory and industrial settings. Growth conditions and their effects on film growth have been described. Properties of the resulting oxide films, relevant for microelectronic device applications, have also been investigated and reported here. Overall, our findings are that thin, high quality, dense silicon dioxide films of thicknesses up to 100 nm can be easily grown in a depleted oxygen environment at temperatures similar to that used for usual silicon dioxide thermal growth in flowing dry oxygen.

Oxidation State Discrimination in the Atomic Layer Deposition of Vanadium Oxides

DOE PAGES

Weimer, Matthew S.; Kim, In Soo; Guo, Peijun; ...

2017-06-02

We describe the use of a vanadium 3+ precursor for atomic layer deposition (ALD) of thin films that span the common oxidation states of vanadium oxides. Self-limiting surface synthesis of V 2O 3, VO 2, and V 2O 5 are realized via four distinct reaction mechanisms accessed via judicious choice of oxygen ALD partners. In situ quartz crystal microbalance and quadrupole mass spectrometry were used to study the reaction mechanism of the vanadium precursor with O 3, H 2O 2, H 2O/O 2, and H 2O 2/H 2. A clear distinction between non-oxidative protic ligand exchange and metal oxidation ismore » demonstrated through sequential surface reactions with different non-metal precursors. This synergistic effect, provides greater control of the resultant metal species in the film, as well as reactive surface species during growth. In an extension of this approach, we introduce oxidation state control through reducing equivalents of H 2 gas. When H 2 is dosed after H 2O 2 during growth, amorphous films of VO 2 are deposited that are readily crystallized with a low temperature anneal. These VO 2 films show a temperature dependent Raman spectroscopy response in the expected range and consistent with the well-known phase-change behavior of VO 2.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eaton, Craig; Brahlek, Matthew; Engel-Herbert, Roman, E-mail: rue2@psu.edu

The authors report the growth of stoichiometric SrVO{sub 3} thin films on (LaAlO{sub 3}){sub 0.3}(Sr{sub 2}AlTaO{sub 6}){sub 0.7} (001) substrates using hybrid molecular beam epitaxy. This growth approach employs a conventional effusion cell to supply elemental A-site Sr and the metalorganic precursor vanadium oxytriisopropoxide (VTIP) to supply vanadium. Oxygen is supplied in its molecular form through a gas inlet. An optimal VTIP:Sr flux ratio has been identified using reflection high-energy electron-diffraction, x-ray diffraction, atomic force microscopy, and scanning transmission electron microscopy, demonstrating stoichiometric SrVO{sub 3} films with atomically flat surface morphology. Away from the optimal VTIP:Sr flux, characteristic changes inmore » the crystalline structure and surface morphology of the films were found, enabling identification of the type of nonstoichiometry. For optimal VTIP:Sr flux ratios, high quality SrVO{sub 3} thin films were obtained with smallest deviation of the lattice parameter from the ideal value and with atomically smooth surfaces, indicative of the good cation stoichiometry achieved by this growth technique.« less

Fabrication and Characteristics of Pentacene/Vanadium Pentoxide Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Minagawa, M.; Nakai, K.; Baba, A.

2011-12-23

Organic field-effect transistors (OFETs) were fabricated using pentacene thin layer, and the effects of inserted Lewis-acid thin layers on electrical properties were investigated. The OFETs have active layers of pentacene and vanadium pentoxide (V{sub 2}O{sub 5}) as a Lewis-acid layer. Typical source-drain current (I{sub DS}) vs. source-drain voltage (V{sub DS}) curves were observed under negative gate voltages (V{sub G}S) application, and the shift of the threshold voltage for FET driving (V{sub t}) to positive side was also observed by V{sub 2}O{sub 5} layer insertion, that is, -2.5 V for device with V{sub 2}O{sub 5} layer and -5.7 V for devicemore » without V{sub 2}O{sub 5} layer. It was thought that charge transfer (CT) complexes which were formed at the interface between pentacene and V{sub 2}O{sub 5} layer were dissociated by the applied gate voltage, and the generated holes seem to contribute to drain current and the apparent V{sub t} improvement.« less

Vanadium Oxide Thin Films Alloyed with Ti, Zr, Nb, and Mo for Uncooled Infrared Imaging Applications

NASA Astrophysics Data System (ADS)

Ozcelik, Adem; Cabarcos, Orlando; Allara, David L.; Horn, Mark W.

2013-05-01

Microbolometer-grade vanadium oxide (VO x ) thin films with 1.3 < x < 2.0 were prepared by pulsed direct-current (DC) sputtering using substrate bias in a controlled oxygen and argon environment. These films were systematically alloyed with Ti, Nb, Mo, and Zr using a second gun and radiofrequency (RF) reactive co-sputtering to probe the effects of the transition metals on the film charge transport characteristics. The results reveal that the temperature coefficient of resistance (TCR) and resistivity are unexpectedly similar for alloyed and unalloyed films up to alloy compositions in the ˜20 at.% range. Analysis of the film structures for the case of the 17% Nb-alloyed film by glancing-angle x-ray diffraction and transmission electron microscopy shows that the microstructure remains even with the addition of high concentrations of alloy metal, demonstrating the robust character of the VO x films to maintain favorable electrical transport properties for bolometer applications. Postdeposition thermal annealing of the alloyed VO x films further reveals improvement of electrical properties compared with unalloyed films, indicating a direction for further improvements in the materials.

Action of pulse-periodic and continuous IR radiation on light-controlled vanadium dioxide mirrors

NASA Astrophysics Data System (ADS)

Danilov, Oleg B.; Sidorov, Aleksandr I.; Titterton, David H.; Tul'skii, Stanislav A.; Yachnev, Igor L.; Zhevlakov, Aleksandr P.

2001-03-01

The results of an experimental research of action of the intensive mid IR-range pulse-periodic laser radiation on VO2-mirrors are represented. The damage thresholds of VO2-mirrors are defined for pulse-periodic and continuous radiation and the analysis of the mechanism of their destruction is carried out. The results of numerical simulation of dynamics of switching of VO2-mirrors under the action of pulse-periodic radiation are presented.

Tunable optical switching in the near-infrared spectral regime by employing plasmonic nanoantennas containing phase change materials.

PubMed

Savaliya, Priten B; Thomas, Arun; Dua, Rishi; Dhawan, Anuj

2017-10-02

We propose the design of switchable plasmonic nanoantennas (SPNs) that can be employed for optical switching in the near-infrared regime. The proposed SPNs consist of nanoantenna structures made up of a plasmonic metal (gold) such that these nanoantennas are filled with a switchable material (vanadium dioxide). We compare the results of these SPNs with inverted SPN structures that consist of gold nanoantenna structures surrounded by a layer of vanadium dioxide (VO 2 ) on their outer surface. These nanoantennas demonstrate switching of electric-field intensity enhancement (EFIE) between two states (On and Off states), which can be induced thermally, optically or electrically. The On and Off states of the nanoantennas correspond to the metallic and semiconductor states, respectively of the VO 2 film inside or around the nanoantennas, as the VO 2 film exhibits phase transition from its semiconductor state to the metallic state upon application of thermal, optical, or electrical energy. We employ finite-difference time-domain (FDTD) simulations to demonstrate switching in the EFIE for four different SPN geometries - nanorod-dipole, bowtie, planar trapezoidal toothed log-periodic, and rod-disk - and compare their near-field distributions for the On and Off states of the SPNs. We also demonstrate that the resonance wavelength of the EFIE spectra gets substantially modified when these SPNs switch between the two states.

Growth temperature-dependent metal–insulator transition of vanadium dioxide epitaxial films on perovskite strontium titanate (111) single crystals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Liangxin; Zhao, Jiangtao; Hong, Bin

2016-04-14

Vanadium dioxide (VO{sub 2}) epitaxial films were grown on perovskite single-crystal strontium titanate (SrTiO{sub 3}) substrates by reactive radio-frequency magnetron sputtering. The growth temperature-dependent metal–insulator transition (MIT) behavior of the VO{sub 2} epitaxial films was then investigated. We found that the order of magnitude of resistance change across the MIT increased from 10{sup 2} to 10{sup 4} with increasing growth temperature. In contrast, the temperature of the MIT does not strongly depend on the growth temperature and is fairly stable at about 345 K. On one hand, the increasing magnitude of the MIT is attributed to the better crystallinity and thusmore » larger grain size in the (010)-VO{sub 2}/(111)-SrTiO{sub 3} epitaxial films at elevated temperature. On the other hand, the strain states do not change in the VO{sub 2} films deposited at various temperatures, resulting in stable V-V chains and V-O bonds in the VO{sub 2} epitaxial films. The accompanied orbital occupancy near the Fermi level is also constant and thus the MIT temperatures of VO{sub 2} films deposited at various temperatures are nearly the same. This work demonstrates that high-quality VO{sub 2} can be grown on perovskite substrates, showing potential for integration into oxide heterostructures and superlattices.« less

Investigation of plasma dynamics during the growth of amorphous titanium dioxide thin films

NASA Astrophysics Data System (ADS)

Kim, Jin-Soo; Jee, Hyeok; Yu, Young-Hun; Seo, Hye-Won

2018-06-01

We have grown amorphous titanium dioxide thin films by reactive DC sputtering method using a different argon/oxygen partial pressure at a room temperature. The plasma dynamics of the process, reactive and sputtered gas particles was investigated via optical emission spectroscopy. We then studied the correlations between the plasma states and the structural/optical properties of the films. The growth rate and morphology of the titanium dioxide thin films turned out to be contingent with the population and the energy profile of Ar, O, and TiO plasma. In particular, the films grown under energetic TiO plasma have shown a direct band-to-band transition with an optical energy band gap up to ∼4.2 eV.

Studies of electronic and magnetic properties of LaVO3 thin film

NASA Astrophysics Data System (ADS)

Jana, Anupam; Karwal, Sharad; Choudhary, R. J.; Phase, D. M.

2018-04-01

We have investigated the electronic and magnetic properties of pulsed laser deposited Mott insulator LaVO3 (LVO) thin film. Structural characterization revels the single phase [00l] oriented LVO thin film. Enhancement of out of plane lattice parameter indicates the compressively strained LVO film. Electron spectroscopic studies demonstrate that vanadium is present in V3+ state. An energy dispersive X-ray spectroscopic study ensures the stoichiometric growth of the film. Very smooth surface is observed in scanning electron micrograph. Colour mapping for elemental distribution reflect the homogeneity of LVO film. The bifurcation between zero-field-cooled and Field-cooled curves clearly points towards the weak ferromagnetic phase presence in compressively strained LVO thin film. A finite value of coercivity at 300 K reflects the possibility of room temperature ferromagnetism of LVO thin film.

Fuel Retention Improvement at High Temperatures in Tungsten-Uranium Dioxide Dispersion Fuel Elements by Plasma-Spray Cladding

NASA Technical Reports Server (NTRS)

Grisaffe, Salvatore J.; Caves, Robert M.

1964-01-01

An investigation was undertaken to determine the feasibility of depositing integrally bonded plasma-sprayed tungsten coatings onto 80-volume-percent tungsten - 20-volume-percent uranium dioxide composites. These composites were face clad with thin tungsten foil to inhibit uranium dioxide loss at elevated temperatures, but loss at the unclad edges was still significant. By preheating the composite substrates to approximately 3700 degrees F in a nitrogen environment, metallurgically bonded tungsten coatings could be obtained directly by plasma spraying. Furthermore, even though these coatings were thin and somewhat porous, they greatly inhibited the loss of uranium dioxide. For example, a specimen that was face clad but had no edge cladding lost 5.8 percent uranium dioxide after 2 hours at 4750 dgrees F in flowing hydrogen. A similar specimen with plasma-spray-coated edges, however, lost only 0.75 percent uranium dioxide under the same testing conditions.

Activation cross-sections of proton induced reactions on vanadium in the 37-65 MeV energy range

NASA Astrophysics Data System (ADS)

Ditrói, F.; Tárkányi, F.; Takács, S.; Hermanne, A.

2016-08-01

Experimental excitation functions for proton induced reactions on natural vanadium in the 37-65 MeV energy range were measured with the activation method using a stacked foil irradiation technique. By using high resolution gamma spectrometry cross-section data for the production of 51,48Cr, 48V, 48,47,46,44m,44g,43Sc and 43,42K were determined. Comparisons with the earlier published data are presented and results predicted by different theoretical codes (EMPIRE and TALYS) are included. Thick target yields were calculated from a fit to our experimental excitation curves and compared with the earlier experimental yield data. Depth distribution curves to be used for thin layer activation (TLA) are also presented.

Low-Cost and Facile Synthesis of the Vanadium Oxides V2O3, VO2, and V2O5 and Their Magnetic, Thermochromic and Electrochromic Properties.

PubMed

Mjejri, Issam; Rougier, Aline; Gaudon, Manuel

2017-02-06

In this study, vanadium sesquioxide (V 2 O 3 ), dioxide (VO 2 ), and pentoxide (V 2 O 5 ) were all synthesized from a single polyol route through the precipitation of an intermediate precursor: vanadium ethylene glycolate (VEG). Various annealing treatments of the VEG precursor, under controlled atmosphere and temperature, led to the successful synthesis of the three pure oxides, with sub-micrometer crystallite size. To the best of our knowledge, the synthesis of the three oxides V 2 O 5 , VO 2 , and V 2 O 3 from a single polyol batch has never been reported in the literature. In a second part of the study, the potentialities brought about by the successful preparation of sub-micrometer V 2 O 5 , VO 2 , and V 2 O 3 are illustrated by the characterization of the electrochromic properties of V 2 O 5 films, a discussion about the metal to insulator transition of VO 2 on the basis of in situ measurements versus temperature of its electrical and optical properties, and the characterization of the magnetic transition of V 2 O 3 powder from SQUID measurements. For the latter compound, the influence of the crystallite size on the magnetic properties is discussed.

Tracking the insulator-to-metal phase transition in VO 2 with few-femtosecond extreme UV transient absorption spectroscopy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jager, Marieke F.; Ott, Christian; Kraus, Peter M.

We present coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO 2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M 2,3 edge is used to track the insulator-to-metal phase transition in VO 2 . This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase,more » and measures the phase-transition dynamics in the insulating phase. An understanding of the VO 2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V 3+/d 2 character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott–Hubbard-type mechanism is favored, as the observed timescales and d 2 nature of the vanadium metal centers are inconsistent with a Peierls driving force. In conclusion, the findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials.« less

Tracking the insulator-to-metal phase transition in VO2 with few-femtosecond extreme UV transient absorption spectroscopy

PubMed Central

Jager, Marieke F.; Ott, Christian; Kraus, Peter M.; Kaplan, Christopher J.; Pouse, Winston; Marvel, Robert E.; Haglund, Richard F.; Neumark, Daniel M.; Leone, Stephen R.

2017-01-01

Coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M2,3 edge is used to track the insulator-to-metal phase transition in VO2. This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase, and measures the phase-transition dynamics in the insulating phase. An understanding of the VO2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V3+/d2 character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott–Hubbard-type mechanism is favored, as the observed timescales and d2 nature of the vanadium metal centers are inconsistent with a Peierls driving force. The findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials. PMID:28827356

Tracking the insulator-to-metal phase transition in VO 2 with few-femtosecond extreme UV transient absorption spectroscopy

DOE PAGES

Jager, Marieke F.; Ott, Christian; Kraus, Peter M.; ...

2017-08-21

We present coulomb correlations can manifest in exotic properties in solids, but how these properties can be accessed and ultimately manipulated in real time is not well understood. The insulator-to-metal phase transition in vanadium dioxide (VO 2) is a canonical example of such correlations. Here, few-femtosecond extreme UV transient absorption spectroscopy (FXTAS) at the vanadium M 2,3 edge is used to track the insulator-to-metal phase transition in VO 2 . This technique allows observation of the bulk material in real time, follows the photoexcitation process in both the insulating and metallic phases, probes the subsequent relaxation in the metallic phase,more » and measures the phase-transition dynamics in the insulating phase. An understanding of the VO 2 absorption spectrum in the extreme UV is developed using atomic cluster model calculations, revealing V 3+/d 2 character of the vanadium center. We find that the insulator-to-metal phase transition occurs on a timescale of 26 ± 6 fs and leaves the system in a long-lived excited state of the metallic phase, driven by a change in orbital occupation. Potential interpretations based on electronic screening effects and lattice dynamics are discussed. A Mott–Hubbard-type mechanism is favored, as the observed timescales and d 2 nature of the vanadium metal centers are inconsistent with a Peierls driving force. In conclusion, the findings provide a combined experimental and theoretical roadmap for using time-resolved extreme UV spectroscopy to investigate nonequilibrium dynamics in strongly correlated materials.« less

Role of copper/vanadium on the optoelectronic properties of reactive RF magnetron sputtered NiO thin films

NASA Astrophysics Data System (ADS)

Panneerselvam, Vengatesh; Chinnakutti, Karthik Kumar; Thankaraj Salammal, Shyju; Soman, Ajith Kumar; Parasuraman, Kuppusami; Vishwakarma, Vinita; Kanagasabai, Viswanathan

2018-04-01

In this study, pristine nickel oxide (NiO), copper-doped NiO (Cu-NiO) and vanadium-doped NiO (V-NiO) thin films were deposited using reactive RF magnetron co-sputtering as a function of dopant sputtering power. Cu (0-8 at%) and V (0-1 at%) were doped into the NiO lattice by varying the sputtering power of Cu and V in the range of 5-15 W. The effect of dopant concentration on optoelectronic behavior is investigated by UV-Vis-NIR spectrophotometer and Hall measurements. XRD analysis showed that the preferred orientation of the cubic phase for undoped NiO changes from (200) to (111) plane when the sputtering parameters are varied. The observed changes in the lattice parameters and bonding states of the doped NiO indicate the substitution of Ni ions by monovalent Cu and trivalent V ions. The optical bandgap of pristine NiO, Cu-NiO, and V-NiO was found to be 3.6, 3.45, and 3.05 eV, respectively, with decreased transmittance and resistivity. Further analysis using SEM and AFM described the morphological behavior of doped NiO thin films and Raman spectroscopy indicated the structural changes on doping. These findings would be helpful in fabricating solid-state solar cells using doped NiO as efficient hole transporting material.

Oriented conductive oxide electrodes on SiO2/Si and glass

DOEpatents

Jia, Quanxi; Arendt, Paul N.

2001-01-01

A thin film structure is provided including a silicon substrate with a layer of silicon dioxide on a surface thereof, and a layer of cubic oxide material deposited upon the layer of silicon dioxide by ion-beam-assisted-deposition, said layer of cubic oxide material characterized as biaxially oriented. Preferably, the cubic oxide material is yttria-stabilized zirconia. Additional thin layers of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide are deposited upon the layer of yttria-stabilized zirconia. An intermediate layer of cerium oxide is employed between the yttria-stabilized zirconia layer and the lanthanum strontium cobalt oxide layer. Also, a layer of barium strontium titanium oxide can be upon the layer of biaxially oriented ruthenium oxide or lanthanum strontium cobalt oxide. Also, a method of forming such thin film structures, including a low temperature deposition of a layer of a biaxially oriented cubic oxide material upon the silicon dioxide surface of a silicon dioxide/silicon substrate is provided.

Rapid and precise determination of total sulphur in soda-lime-silica glasses.

PubMed

Beesley, W J; Chamberlain, B R

1974-04-01

A method is described for the determination of total sulphur in small amounts of soda-lime-silica glasses (100 mg or less). The crushed glass is mixed with vanadium pentoxide and decomposed at 1450 degrees under oxygen. The sulphur is quantitatively removed from the glass and determined by a conductometric technique. The method is standardized by accurately injecting sulphur dioxide into the furnace tube. The analysis time is about 10 min and the overall precision (2s) is of the order of 5%.

Dynamic Control of Radiative Heat Transfer with Tunable Materials for Thermal Management in Both Far and Near Fields

NASA Astrophysics Data System (ADS)

Yang, Yue

The proposed research mainly focuses on employing tunable materials to achieve dynamic control of radiative heat transfer in both far and near fields for thermal management. Vanadium dioxide (VO2), which undergoes a phase transition from insulator to metal at the temperature of 341 K, is one tunable material being applied. The other one is graphene, whose optical properties can be tuned by chemical potential through external bias or chemical doping. (Abstract shortened by ProQuest.).

Tin-dioxide nanocrystals as Er3+ luminescence sensitizers: Formation of glass-ceramic thin films and their characterization

NASA Astrophysics Data System (ADS)

Zur, Lidia; Tran, Lam Thi Ngoc; Meneghetti, Marcello; Tran, Van Thi Thanh; Lukowiak, Anna; Chiasera, Alessandro; Zonta, Daniele; Ferrari, Maurizio; Righini, Giancarlo C.

2017-01-01

Silica-tin dioxide thin films doped with Er3+ ions were fabricated and investigated. Different parameters such as heat-treatment temperatures, molar concentrations of SnO2 as well as Er3+ ions concentration were changed in order to obtain the best properties of presented thin films. Using several techniques, thin films were characterized and proved to be crack-free, water-free and smooth after a heat-treatment at 1200 °C. Aiming to application in optics, the transparency of thin films was also evidenced by transmission spectra. Based on the photoluminescence measurements, the mechanism of energy transfer from SnO2 nanocrystals to Er3+ ions was examined and discussed.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO2 Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

NASA Astrophysics Data System (ADS)

Kana, J. B. Kana; Ndjaka, J. M.; Manyala, N.; Nemraoui, O.; Beye, A. C.; Maaza, M.

2008-09-01

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO2) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 °C to 600 °C. The X-ray diffraction results demonstrated that the Au and VO2 were well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 °C to 100 °C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at ˜57 nm for substrate temperature higher than 500 °C.

Polarized Raman scattering of epitaxial vanadium dioxide films with low-temperature monoclinic phase

NASA Astrophysics Data System (ADS)

Shibuya, Keisuke; Sawa, Akihito

2017-07-01

A polarized Raman scattering study was carried out on epitaxial VO2 thin films on MgF2(001) and (110) substrates to investigate the Raman symmetry and tensor elements of the phonon modes of the films in a low-temperature monoclinic phase. From the polarization angular dependence of the Raman intensity, we assigned the phonon modes at 137, 194, 310, 340, 499, 612, and 663 cm-1 to Ag symmetry and the phonon modes at 143, 262, 442, 480, 582, and 820 cm-1 to Bg symmetry. The angular-dependence measurements also revealed that two phonon modes with Ag and Bg symmetries are present at about 224 and 393 cm-1, although only a single peak was observed in the Raman spectra at around these wavenumbers. On the basis of the experimental results, we evaluated the Raman tensors of the identified phonon modes. From the Raman tensors, we found that the atomic displacements of the 194 and 340 cm-1 phonon modes are approximately perpendicular and parallel, respectively, to the V-V dimer direction. This is consistent with a previous theoretical prediction, i.e., these modes are attributable to the tilting motion and the stretching vibration of the V-V dimers, respectively.

Voltage- and current-activated metal-insulator transition in VO2-based electrical switches: a lifetime operation analysis.

PubMed

Crunteanu, Aurelian; Givernaud, Julien; Leroy, Jonathan; Mardivirin, David; Champeaux, Corinne; Orlianges, Jean-Christophe; Catherinot, Alain; Blondy, Pierre

2010-12-01

Vanadium dioxide is an intensively studied material that undergoes a temperature-induced metal-insulator phase transition accompanied by a large change in electrical resistivity. Electrical switches based on this material show promising properties in terms of speed and broadband operation. The exploration of the failure behavior and reliability of such devices is very important in view of their integration in practical electronic circuits. We performed systematic lifetime investigations of two-terminal switches based on the electrical activation of the metal-insulator transition in VO 2 thin films. The devices were integrated in coplanar microwave waveguides (CPWs) in series configuration. We detected the evolution of a 10 GHz microwave signal transmitted through the CPW, modulated by the activation of the VO 2 switches in both voltage- and current-controlled modes. We demonstrated enhanced lifetime operation of current-controlled VO 2 -based switching (more than 260 million cycles without failure) compared with the voltage-activated mode (breakdown at around 16 million activation cycles). The evolution of the electrical self-oscillations of a VO 2 -based switch induced in the current-operated mode is a subtle indicator of the material properties modification and can be used to monitor its behavior under various external stresses in sensor applications.

Thermochromic VO2 thin films: solution-based processing, improved optical properties, and lowered phase transformation temperature.

PubMed

Zhang, Zongtao; Gao, Yanfeng; Chen, Zhang; Du, Jing; Cao, Chuanxiang; Kang, Litao; Luo, Hongjie

2010-07-06

This paper describes a solution-phase synthesis of high-quality vanadium dioxide thermochromic thin films. The films obtained showed excellent visible transparency and a large change in transmittance at near-infrared (NIR) wavelengths before and after the metal-insulator phase transition (MIPT). For a 59 nm thick single-layer VO(2) thin film, the integral values of visible transmittance (T(int)) for metallic (M) and semiconductive (S) states were 54.1% and 49.1%, respectively, while the NIR switching efficiencies (DeltaT) were as high as 50% at 2000 nm. Thinner films can provide much higher transmittance of visible light, but they suffer from an attenuation of the switching efficiency in the near-infrared region. By varying the film thickness, ultrahigh T(int) values of 75.2% and 75.7% for the M and S states, respectively, were obtained, while the DeltaT at 2000 nm remained high. These results represent the best data for VO(2) to date. Thicker films in an optimized range can give enhanced NIR switching efficiencies and excellent NIR blocking abilities; in a particularly impressive experiment, one film provided near-zero NIR transmittance in the switched state. The thickness-dependent performance suggests that VO(2) will be of great use in the objective-specific applications. The reflectance and emissivity at the wavelength range of 2.5-25 microm before and after the MIPT were dependent on the film thickness; large contrasts were observed for relatively thick films. This work also showed that the MIPT temperature can be reduced simply by selecting the annealing temperature that induces local nonstoichiometry; a MIPT temperature as low as 42.7 degrees C was obtained by annealing the film at 440 degrees C. These properties (the high visible transmittance, the large change in infrared transmittance, and the near room-temperature MIPT) suggest that the current method is a landmark in the development of this interesting material toward applications in energy-saving smart windows.

Uranium resources in the Silver Reef (Harrisburg) district, Washington County, Utah

USGS Publications Warehouse

Stugard, Frederick

1951-01-01

The Silver Reef district is near Leeds, about 16 miles north of St. George, Utah. The major structural feature of the district is the Virgin anticline, a fold extending southwestward toward St. George. The anticline has been breached by erosion, and sandstone hogbacks or 'reefs' are carved from the Shinarump conglomerate mud sandstone members of the Chinle formation, both of Triassic age. Thirteen occurrences of uranium-vanadium minerals, all within the Tecumseh sandstone, which is the upper part of the Silver Reef sandstone member of the Chinle formation, have been examined over an area about 1.75 miles wide and 3 miles long. Two shipments of uranium-vanadium ore have been produced from the Chloride Chief and Silver Point claims. Samples from the deposits contain as much as 0.94 percent U3O8. The ore contains several times as much vanadium oxide as uranium, some copper, and traces of silver. It occurs in thinly bedded cross-bedded shales and sandstones within the fluviatile Tecumseh sandstone member of the Chinle formation. The ore beds are lenticular and are localized 2 near the base, center, and top of this sandstone member. The uranium-vanadium ore contains several yellow and green minerals not yet identified; the occurrences are similar to, but not associated with, the cerargyrite ore that made the district famous from 1879 to 1909.

Thermal annealing induced multiple phase in V/V2O5 alternating multilayer structure

NASA Astrophysics Data System (ADS)

Ilahi, B.; Abdel-Rahman, M.; Zaaboub, Z.; Zia, M. F.; Alduraibi, M.; Maaref, H.

2016-09-01

In this paper, we report on microstructural, optical and electrical properties of alternating multilayer of vanadium pentoxide (V2O5), 25 nm, and vanadium (V), 5 nm, thin films deposited at room temperature by radio frequency (RF) and DC magnetron sputtering, respectively. Raman and photoluminescence (PL) spectroscopy have been employed to investigate the effects of thermal annealing for 20, 30 and 40 min at 400∘C in Nitrogen (N2) atmosphere on the multiple phase formation and its impact on the film resistance and temperature coefficient of resistance (TCR). We demonstrate that the oxygen free annealing environment allows the formation of multiple phases including V2O5, V6O13 and VO2 through oxygen diffusion and consequent deficiency in V2O5 layer.

Self Assembly and Properties of C:WO3 Nano-Platelets and C:VO2/V2O5 Triangular Capsules Produced by Laser Solution Photolysis

PubMed Central

2010-01-01

Laser photolysis of WCl6 in ethanol and a specific mixture of V2O5 and VCl3 in ethanol lead to carbon modified vanadium and tungsten oxides with interesting properties. The presence of graphene’s aromatic rings (from the vibrational frequency of 1,600 cm−1) together with C–C bonding of carbon (from the Raman shift of 1,124 cm−1) present unique optical, vibrational, electronic and structural properties of the intended tungsten trioxide and vanadium dioxide materials. The morphology of these samples shows nano-platelets in WOx samples and, in VOx samples, encapsulated spherical quantum dots in conjunction with fullerenes of VOx. Conductivity studies revealed that the VO2/V2O5 nanostructures are more sensitive to Cl than to the presence of ethanol, whereas the C:WO3 nano-platelets are more sensitive to ethanol than atomic C. PMID:20671779

Properties of the correlated metal phase induced by electrolyte gating of insulating vanadium dioxide nanobeams

NASA Astrophysics Data System (ADS)

Singh, Sujay; Horrocks, Gregory; Marley, Peter; Banerjee, Sarbajit; Sambandamurthy, G.

2014-03-01

Vanadium oxide (VO2) undergoes a first order metal to insulator transition (MIT) and a structural phase transition (monoclinic insulator to rutile metal) near 340 K. Over the past few years, several attempts are made to trigger the MIT in VO2 using ionic liquids (IL). Parkin's group has recently showed that IL gating leads to the creation of oxygen vacancies in VO2 and stabilizes the metallic phase. Our goal is to study the electronic properties, changes in the stoichiometry and structure of this metallic phase created by oxygen vacancies. Electrical transport measurements on single crystal nanobeams show that the metallic phase has a higher resistance while IL gating is applied and results from Raman spectroscopy studies on any structural change during IL gating will be presented. The role of substitutional dopants (such as W, Mo) on the creation of oxygen vacancies and subsequent stabilization of metallic phase in IL gated experiments will also be discussed. The work is supported by NSF DMR 0847324 and 0847169.

Vanadium dioxide-based materials for potential thermal switching applications

NASA Astrophysics Data System (ADS)

Jeong, Minyoung

One of the materials able to exhibit a transition from insulators to metals (IMT materials) is vanadium dioxide (VO2). Through IMT, VO2 shows a drop of resistivity of five orders of magnitude at a picosecond timescale. In this work, the feasibility of using VO2 as an efficient thermal switching device is discussed. Several synthesis methods (sol-gel, hot press and spark plasma sintering) were attempted to obtain VO2 sample in pellet form. From the X-ray diffraction results, it was found that spark plasma sintering (SPS) yielded the highest phase purity. Several sintering parameters such as temperature or sintering time were tested to determine the optimal sintering conditions. For better thermal switching behavior, high-energy ball milling was used to reduce lattice thermal conductivity (klat.) in the insulator phase. Ball-milling time was varied from 30 minutes to 2 hours. It was found that with increasing milling time, the k lat. was reduced. Thus, it was demonstrated that thermal switching behavior was most efficient with 2 hour-milling. To improve electronic thermal conductivity ( kelec.) in the metallic state, nano-sized copper particles were added to the VO2 system with a subtle amount variation ranging from 3at % to 5 at%. Results show that a composite with 5 at% Cu (copper) addition exhibited the largest increase in thermal conductivity ( k) in the metallic state. In addition to this, a basic mechanism behind IMT and some of the exemplary IMT-based applications were introduced.

Thin film battery and method for making same

DOEpatents

Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

1994-08-16

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between [minus]15 C and 150 C. 9 figs.

Thin film battery and method for making same

DOEpatents

Bates, John B.; Dudney, Nancy J.; Gruzalski, Greg R.; Luck, Christopher F.

1994-01-01

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Effect of aging heat time and annealing temperature on the properties of nanocrystalline tin dioxide thin films

NASA Astrophysics Data System (ADS)

Kadhim, Imad H.; Abu Hassan, H.

2017-04-01

Nanocrystalline tin dioxide (SnO2) thin films have been successfully prepared by sol-gel spin-coating technique on p-type Si (100) substrates. A stable solution was prepared by mixing tin(II) chloride dihydrate, pure ethanol, and glycerin. Temperature affects the properties of SnO2 thin films, particularly the crystallite size where the crystallization of SnO2 with tetragonal rutile structure is achieved when thin films that prepared under different aging heat times are annealed at 400∘C. By increasing aging heat time in the presence of annealing temperatures the FESEM images indicated that the thickness of the fabricated film was directly proportional to solution viscosity, increasing from approximately 380 nm to 744 nm, as well as the crystallization of the thin films improved and reduced defects.

Electron-beam-evaporated thin films of hafnium dioxide for fabricating electronic devices

DOE PAGES

Xiao, Zhigang; Kisslinger, Kim

2015-06-17

Thin films of hafnium dioxide (HfO 2) are widely used as the gate oxide in fabricating integrated circuits because of their high dielectric constants. In this paper, the authors report the growth of thin films of HfO 2 using e-beam evaporation, and the fabrication of complementary metal-oxide semiconductor (CMOS) integrated circuits using this HfO 2 thin film as the gate oxide. The authors analyzed the thin films using high-resolution transmission electron microscopy and electron diffraction, thereby demonstrating that the e-beam-evaporation-grown HfO 2 film has a polycrystalline structure and forms an excellent interface with silicon. Accordingly, we fabricated 31-stage CMOS ringmore » oscillator to test the quality of the HfO 2 thin film as the gate oxide, and obtained excellent rail-to-rail oscillation waveforms from it, denoting that the HfO 2 thin film functioned very well as the gate oxide.« less

The effect of solution concentration on the physical and electrochemical properties of vanadium oxide films deposited by spray pyrolysis

NASA Astrophysics Data System (ADS)

Mousavi, M.; Kompany, A.; Shahtahmasebi, N.; Bagheri-Mohagheghi, M. M.

2013-10-01

Vanadium oxide thin films were prepared on glass substrates by using the spray pyrolysis technique. The effect of solution concentration (0.1 M, 0.2 M and 0.3 M) on the nanostructural, electrical, optical, and electrochromic properties of deposited films were investigated using X-ray diffraction, scanning electron microscopy, UV—vis spectroscopy, and cyclic volta-metrics. The X-ray diffraction shows that only the sample at 0.1 M has a single β-V2O5 phase and the others have mixed phases of vanadium oxide. The lowest sheet resistance was obtained for the samples prepared at 0.3 M solution. It was also found that the optical transparency of the samples changes from 70% to 35% and the optical band gap of the samples was in the range of 2.20 to 2.41 eV, depending on the morality of solution. The cycle voltammogram shows that the sample prepared at 0.3 M has one-step electerochoromic but the other samples have two-step electerochoromic. The results show a correlation between the cycle voltammogram and the physical properties of the films.

Possibilities of surface coating for thermal insulation. [zirconium dioxide, titanium dioxide, and zircon coatings

NASA Technical Reports Server (NTRS)

Poeschel, E.; Weisser, G.

1979-01-01

Calculations performed for pulsating heat sources indicate a relatively thin (200-1000 micron) coating can lower temperature both inside and on the surface of a construction material. Various coating materials (including zirconium dioxide) are discussed, together with possible thermic stresses and ways to deal with the latter.

Effects of V2O5/Au bi-layer electrodes on the top contact Pentacene-based organic thin film transistors

NASA Astrophysics Data System (ADS)

Borthakur, Tribeni; Sarma, Ranjit

2017-05-01

Top-contact Pentacene-based organic thin film transistors (OTFTs) with a thin layer of Vanadium Pent-oxide between Pentacene and Au layer are fabricated. Here we have found that the devices with V2O5/Au bi-layer source-drain electrode exhibit better field-effect mobility, high on-off ratio, low threshold voltage and low sub-threshold slope than the devices with Au only. The field-effect mobility, current on-off ratio, threshold voltage and sub-threshold slope of V2O5/Au bi-layer OTFT estimated from the device with 15 nm thick V2O5 layer is .77 cm2 v-1 s-1, 7.5×105, -2.9 V and .36 V/decade respectively.

Peroxy-Titanium Complex-based inks for low temperature compliant anatase thin films.

PubMed

Shabanov, N S; Asvarov, A Sh; Chiolerio, A; Rabadanov, K Sh; Isaev, A B; Orudzhev, F F; Makhmudov, S Sh

2017-07-15

Stable highly crystalline titanium dioxide colloids are of paramount importance for the establishment of a solution-processable library of materials that could help in bringing the advantages of digital printing to the world of photocatalysis and solar energy conversion. Nano-sized titanium dioxide in the anatase phase was synthesized by means of hydrothermal methods and treated with hydrogen peroxide to form Peroxy-Titanium Complexes (PTCs). The influence of hydrogen peroxide on the structural, optical and rheological properties of titanium dioxide and its colloidal solutions were assessed and a practical demonstration of a low temperature compliant digitally printed anatase thin film given. Copyright © 2017 Elsevier Inc. All rights reserved.

Nanostructured vanadium oxide thin film with high TCR at room temperature for microbolometer

NASA Astrophysics Data System (ADS)

Wang, Bin; Lai, Jianjun; Li, Hui; Hu, Haoming; Chen, Sihai

2013-03-01

In order to obtain high quality of thermal sensitive material, VOx thin film of high temperature coefficient of resistance (TCR) of 6.5%/K at room temperature has been deposited by reactive ion beam sputtering and post annealing method. AFM and XRD measurements indicate that the VOx thin film with nanostructured crystalline is composed of VO2 and V2O3. The nanostructured VOx microbolometer has been designed and fabricated. The measurement of the film system with TiN absorbing layer indicates that it has about 92% infrared absorption in the range of 8-14 μm. The performance of this bolometer, comparing with that of bolometer with common VOx, has a better result. At 20 Hz frequency and 10 μA bias current, the bolometer with high TCR has reached detectivity of 1.0 × 109 cm Hz1/2/W. It also indicates that this nanostructured VOx thin film has not only a higher TCR but also a lower noise than common VOx thin film without annealing.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor Depositions (CVD) of many oxide thin films including ferroelectric and high dielectric constant BaTiO3, SrTiO 3 and PbTiO3 films had been carried out under reduced pressure (30 torr--80 torr) using liquid precursors containing beta-diketone ligands. The relative reactivities of Ba(beta-diketonate)2, Sr(beta-diketonate) 2, Pb(beta-diketonate)2, Ti(beta-diketonate)3, TiO(beta-diketonate)2 and Ti(OiPr)2(beta-diketonate) 2 had been studied individually prior to the deposition of BaTiO 3, SrTiO3 and PbTiO3 thin films from the mixtures of corresponding precursors. By using multi-step deposition method, carbon free stoichiometric BaTiO3 thin films uniform in large area have been achieved.

Combined Thermochromic And Plasmonic: Optical Responses In Novel Nanocomposite Au-VO{sub 2} Films Prepared By RF Inverted Cylindrical Magnetron Sputtering

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kana, J. B. Kana; Department of physics, University of Yaounde I, P.O. Box 812 Yaounde; Ndjaka, J. M.

2008-09-23

We prepared gold/Vanadium dioxide nanocomposites thin films by the rf reactive inverted cylindrical magnetron sputtering (ICMS) for the first time and report their enhanced surface plasmon resonance (SPR) tunable shift reversibility. ICMS has been attracting much attention for its ability for uniform coating of three-dimensional objects and high-rate deposition of dielectric materials. To investigate the optical properties of gold nanoparticles embedded in an active matrix (VO{sub 2}) composite film was synthesized on corning glass substrates for several substrate temperatures ranging from 400 deg. C to 600 deg. C. The X-ray diffraction results demonstrated that the Au and VO{sub 2} weremore » well crystallized. The optical transmission properties were measured from 300nm to 1100nm and the absorption peak due to the surface plasmon resonance (SPR) of Au nanoparticles were observed. Under external temperature stimuli, the tunable reversibility of the SPR shift was observed when the nanocomposites temperature varies from 20 deg. C to 100 deg. C. The enhancement of this shift of SPR was observed as the substrate temperature increases and it was found that the shift of SPR increased rapidly with increasing substrate temperature but then remained constant at {approx}57 nm for substrate temperature higher than 500 deg. C.« less

Exploring the work function variability and structural stability of VO2(1 1 0) surface upon noble metal (Ag, Au, Pt) adsorption and incorporation

NASA Astrophysics Data System (ADS)

Chen, Lanli; Cui, Yuanyuan; Shi, Siqi; Luo, Hongjie; Gao, Yanfeng

2018-08-01

Vanadium dioxide (VO2) has attracted great attention, with scientific and technological advances over the past few decades due to its reversible metal-insulator transition at 340 K. However, the high phase transition temperature (Tc) of VO2 limits its practical applications. Our first-principles calculations show that VO2(1 1 0) surfaces with adsorbed noble metals (Ag, Au, Pt) exhibit a lower work function compared with the clean surface and further induces a lower Tc due to charge transfer from the noble metals to the VO2(1 1 0) surface. However, the work functions of the VO2(1 1 0) surfaces after the incorporation of noble metals are higher than that of the clean surface. In addition, the results of formation energies of various configurations show that the VO2(1 1 0) surface with the adsorption and incorporation of Ag is energetically more favorable than those with Au and Pt. Therefore, it may be concluded that the adsorption and incorporation of noble metals can not only tailor the work function of VO2, in turn realizing the rational tuning of Tc of VO2, but also stabilize the structures of VO2 thin films. These results provide guidance for further exploration of VO2-based optical switching devices and smart windows.

Invited Article: An active terahertz polarization converter employing vanadium dioxide and a metal wire grating in total internal reflection geometry

NASA Astrophysics Data System (ADS)

Liu, Xudong; Chen, Xuequan; Parrott, Edward P. J.; Han, Chunrui; Humbert, Georges; Crunteanu, Aurelian; Pickwell-MacPherson, Emma

2018-05-01

Active broadband terahertz (THz) polarization manipulation devices are challenging to realize, but also of great demand in broadband terahertz systems. Vanadium dioxide (VO2) shows a promising phase transition for active control of THz waves and provides broadband polarization characteristics when integrated within grating-type structures. We creatively combine a VO2-based grating structure with a total internal reflection (TIR) geometry providing a novel interaction mechanism between the electromagnetic waves and the device, to realize a powerful active broadband THz polarization-controlling device. The device is based on a Si-substrate coated with a VO2 layer and a metal grating structure on top, attached to a prism for generating the TIR condition on the Si-VO2-grating interface. The grating is connected to electrodes for electrically switching the VO2 between its insulating and conducting phases. By properly selecting the incident angle of the THz waves, the grating direction, and the incident polarization state, we first achieved a broadband intensity modulator under a fused silica prism with an average modulation depth of 99.75% in the 0.2-1.1 THz region. Additionally, we realized an active ultra-broadband quarter-wave converter under a Si prism that can be switched between a 45° linear rotator and a quarter wave converter in the 0.8-1.5 THz region. This is the first demonstration of an active quarter-wave converter with ultra-broad bandwidth performance. Our work shows a highly flexible and multifunctional polarization-controlling device for broadband THz applications.

Control of electromagnetically induced transparency via a hybrid semiconductor quantum dot-vanadium dioxide nanoparticle system

NASA Astrophysics Data System (ADS)

Zamani, Naser; Hatef, Ali; Nadgaran, Hamid; Keshavarz, Alireza

2017-07-01

We numerically investigate the electromagnetically induced transparency (EIT) of a hybrid system consisting of a three-level quantum dot (QD) in the vicinity of vanadium dioxide nanoparticle (VO2NP). VO2NP has semiconductor and metallic phases where the transition between the two phases occurs around a critical temperature. When the QD-VO2NP hybrid system interacts with continuous wave laser fields in an infrared regime, it supports a coherent coupling of exciton-polariton and exciton-plasmon polariton in semiconductor and metal phases of VO2NP, respectively. In our calculations a filling fraction factor controls the VO2NP phase transition. A probe and control laser field configuration is studied for the hybrid system to measure the absorption of QD through the filling fraction factor manipulations. We show that for the VO2NP semiconductor phase and proper geometrical configuration, the absorption spectrum profile of the QD represents an EIT with two peaks and a clear minimum. These two peaks merge to one through the VO2NP phase transition to metal. We also show that the absorption spectrum profile is modified by different orientations of the laser fields with the axis of the QD-VO2NP hybrid system. The innovation in comparison to other research in the field is that robust variation in the absorption profile through EIT is due to the phase transition in VO2NP without any structural change in the QD-VO2NP hybrid system. Our results can be employed to design nanothermal sensors, optical nanoswitches, and energy transfer devices.

Ozone assisted oxidation of gaseous PCDD/Fs over CNTs-containing composite catalysts at low temperature.

PubMed

Wang, Qiulin; Tang, Minghui; Peng, Yaqi; Du, Cuicui; Lu, Shengyong

2018-05-01

Ozone assisted carbon nanotubes (CNTs) supported vanadium oxide/titanium dioxide (V/Ti-CNTs) or vanadium oxide-manganese oxide/titanium dioxide (V-Mn/Ti-CNTs) catalysts towards gaseous PCDD/Fs (polychlorinated dibenzo-p-dioxins and polychlorinated dibenzofurans) catalytic oxidations at low temperature (150 °C) were investigated. The removal efficiency (RE) and decomposition efficiency (DE) of PCDD/Fs achieved with V-Mn/Ti-CNTs alone were 95% and 45% at 150 °C under a space velocity (SV) of 14000 h -1 ; yet, these values reached 99% and 91% when catalyst and low concentration (50 ppm) ozone were used in combined. The ozone promotion effect on catalytic activity was further enhanced with the addition of manganese oxide (MnO x ) and CNTs. Adding MnO x and CNTs in V/Ti catalysts facilitated the ozone decomposition (creating more active species on catalyst surface), thus, improved ozone utilization (demanding relatively lower ozone addition concentration). On the other hand, this study threw light upon ozone promotion mechanism based on the comparison of catalyst properties (i.e. components, surface area, surface acidity, redox ability and oxidation state) before and after ozone treatment. The experimental results indicate that a synergistic effect exists between catalyst and ozone: ozone is captured and decomposed on catalyst surface; meanwhile, the catalyst properties are changed by ozone in return. Reactive oxygen species from ozone decomposition and the accompanied catalyst properties optimization are crucial reasons for catalyst activation at low temperature. Copyright © 2018 Elsevier Ltd. All rights reserved.

Atomic Layer Deposition of Vanadium Dioxide and a Temperature-dependent Optical Model.

PubMed

Currie, Marc; Mastro, Michael A; Wheeler, Virginia D

2018-05-23

Vanadium dioxide is a material that has a reversible metal-insulator phase change near 68 °C. To grow VO2 on a wide variety of substrates, with wafer-scale uniformity and angstrom level control of thickness, the method of atomic-layer deposition was chosen. This ALD process enables high-quality, low-temperature (≤150 °C) growth of ultrathin films (100-1000 Å) of VO2. For this demonstration, the VO2 films were grown on sapphire substrates. This low temperature growth technique produces mostly amorphous VO2 films. A subsequent anneal in an ultra-high vacuum chamber with a pressure of 7x10 -4 Pa of ultra-high purity (99.999%) oxygen produced oriented, polycrystalline VO2 films. The crystallinity, phase, and strain of the VO2 were determined by Raman spectroscopy and X-ray diffraction, while the stoichiometry and impurity levels were determined by X-ray photoelectron spectroscopy, and finally the morphology was determined by atomic force microscopy. These data demonstrate the high-quality of the films grown by this technique. A model was created to fit to the data for VO2 in its metallic and insulating phases in the near infrared spectral region. The permittivity and refractive index of the ALD VO2 agreed well with the other fabrication methods in its insulating phase, but showed a difference in its metallic state. Finally, the analysis of the films' optical properties enabled the creation of a wavelength- and temperature-dependent model of the complex optical refractive index for developing VO2 as a tunable refractive index material.

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2.

PubMed

Quackenbush, Nicholas F; Paik, Hanjong; Woicik, Joseph C; Arena, Dario A; Schlom, Darrell G; Piper, Louis F J

2015-08-21

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.

Integration and High-Temperature Characterization of Ferroelectric Vanadium-Doped Bismuth Titanate Thin Films on Silicon Carbide

NASA Astrophysics Data System (ADS)

Ekström, Mattias; Khartsev, Sergiy; Östling, Mikael; Zetterling, Carl-Mikael

2017-07-01

4H-SiC electronics can operate at high temperature (HT), e.g., 300°C to 500°C, for extended times. Systems using sensors and amplifiers that operate at HT would benefit from microcontrollers which can also operate at HT. Microcontrollers require nonvolatile memory (NVM) for computer programs. In this work, we demonstrate the possibility of integrating ferroelectric vanadium-doped bismuth titanate (BiTV) thin films on 4H-SiC for HT memory applications, with BiTV ferroelectric capacitors providing memory functionality. Film deposition was achieved by laser ablation on Pt (111)/TiO2/4H-SiC substrates, with magnetron-sputtered Pt used as bottom electrode and thermally evaporated Au as upper contacts. Film characterization by x-ray diffraction analysis revealed predominately (117) orientation. P- E hysteresis loops measured at room temperature showed maximum 2 P r of 48 μC/cm2, large enough for wide read margins. P- E loops were measurable up to 450°C, with losses limiting measurements above 450°C. The phase-transition temperature was determined to be about 660°C from the discontinuity in dielectric permittivity, close to what is achieved for ceramics. These BiTV ferroelectric capacitors demonstrate potential for use in HT NVM applications for SiC digital electronics.

New thin films of NiO doped with V2O5 for electrochromic applications

NASA Astrophysics Data System (ADS)

Azevedo, Cristiane F.; Balboni, Raphael D. C.; Cholant, Camila M.; Moura, Elton A.; Lemos, Rafaela M. J.; Pawlicka, Agnieszka; Gündel, Andre; Flores, Wladimir H.; Pereira, Marcelo; Avellaneda, César O.

2017-11-01

This paper reports on synthesis and characterization of new electrochromic thin films of NiO doped with V2O5 that were prepared by the sol-gel method and deposited by the spin coating technique. The confirmation of the presence of the dopant in the structure of the films was given by energy-dispersive X-ray spectroscopy (EDX). The effect of the addition of vanadium to the films of NiO was evaluated by electrochemical techniques such as cyclic voltammetry, chronocoulometry, and chronoamperometry in 0.5 mol/L KOH electrolyte. The morphology and the structure of the films, determined by microscopies (SEM and AFM), reveal smooth and slightly rough surfaces. The addition of vanadium as a dopant does not produce changes in the host NiO matrix as evidenced by X-ray diffractometry (XRD). However, the addition of the dopant causes a significant improvement in a charge density values of the films that increase more than twice from 25.5 mC/cm2 for NiO to 52.8 mC/cm2 for NiO with 10 mol% of V2O5. V2O5 doping of NiO films also improved their optical properties as well as kinetics of insertion and extraction processes.

Titanium dioxide thin films deposited by pulsed laser deposition and integration in radio frequency devices: Study of structure, optical and dielectric properties

NASA Astrophysics Data System (ADS)

Orlianges, Jean-Christophe; Crunteanu, Aurelian; Pothier, Arnaud; Merle-Mejean, Therese; Blondy, Pierre; Champeaux, Corinne

2012-12-01

Titanium dioxide presents a wide range of technological application possibilities due to its dielectric, electrochemical, photocatalytic and optical properties. The three TiO2 allotropic forms: anatase, rutile and brookite are also interesting, since they exhibit different properties, stabilities and growth modes. For instance, rutile has a high dielectric permittivity, of particular interest for the integration as dielectric in components such as microelectromechanical systems (MEMS) for radio frequency (RF) devices. In this study, titanium dioxide thin films are deposited by pulsed laser deposition. Characterizations by Raman spectroscopy and X-ray diffraction show the evolution of the structural properties. Thin films optical properties are investigated using spectroscopic ellipsometry and transmission measurements from UV to IR range. Co-planar waveguide (CPW) devices are fabricated based on these films. Their performances are measured in the RF domain and compared to simulation, leading to relative permittivity values in the range 30-120, showing the potentialities of the deposited material for capacitive switches applications.

Silicon-on-Insulator Pin Diodes.

DTIC Science & Technology

1987-12-01

Thin (0.5 Micron) Silicon-on-Oxidized Silicon Fig. 2.8 SEM Photographs of CVD Silicon Dioxide on Aluminum 28 After 1500 0 C Anneal in Oxygen...silicon nitride over the silicon dioxide encapsu- -9- lation layer and by depositing the silicon dioxide with a plasma CVD process which uses N20 as...relief via thermal expansion matching varies lin- -27- A B Figure 2.8: SEM Photographs of CVD Silicon Dioxide on Aluminum after 15000 C Anneal in Oxygen

Optical properties of titanium di-oxide thin films prepared by dip coating method

NASA Astrophysics Data System (ADS)

Biswas, Sayari; Rahman, Kazi Hasibur; Kar, Asit Kumar

2018-05-01

Titanium dioxide (TiO2) thin films were prepared by sol-gel dip coating method on ITO coated glass substrate. The sol was synthesized by hydrothermal method at 90°C. The sol was then used to make TiO2 films by dip coating. After dip coating the rest of the sol was dried at 100°C to make TiO2 powder. Thin films were made by varying the number of dipping cycles and were annealed at 500°C. XRD study was carried out for powder samples that confirms the formation of anatase phase. Transmission spectra of thin films show sharp rise in the violet-ultraviolet transition region and a maximum transmittance of ˜60%. Band gap of the prepared films varies from 3.15 eV to 3.22 eV.

Review of infrared scene projector technology-1993

NASA Astrophysics Data System (ADS)

Driggers, Ronald G.; Barnard, Kenneth J.; Burroughs, E. E.; Deep, Raymond G.; Williams, Owen M.

1994-07-01

The importance of testing IR imagers and missile seekers with realistic IR scenes warrants a review of the current technologies used in dynamic infrared scene projection. These technologies include resistive arrays, deformable mirror arrays, mirror membrane devices, liquid crystal light valves, laser writers, laser diode arrays, and CRTs. Other methods include frustrated total internal reflection, thermoelectric devices, galvanic cells, Bly cells, and vanadium dioxide. A description of each technology is presented along with a discussion of their relative benefits and disadvantages. The current state of each methodology is also summarized. Finally, the methods are compared and contrasted in terms of their performance parameters.

Electrochemical gating-induced reversible and drastic resistance switching in VO2 nanowires

PubMed Central

Sasaki, Tsubasa; Ueda, Hiroki; Kanki, Teruo; Tanaka, Hidekazu

2015-01-01

Reversible and drastic modulation of the transport properties in vanadium dioxide (VO2) nanowires by electric field-induced hydrogenation at room temperature was demonstrated using the nanogaps separated by humid air in field-effect transistors with planer-type gates (PG-FET). These PG-FETs allowed us to investigate behavior of revealed hydrogen intercalation and diffusion aspects with time and spatial evolutions in nanowires. These results show that air nanogaps can operate as an electrochemical reaction field, even in a gaseous atmosphere, and offer new directions to explore emerging functions for electronic and energy devices in oxides. PMID:26584679

Electra-optical device including a nitrogen containing electrolyte

DOEpatents

Bates, J.B.; Dudney, N.J.; Gruzalski, G.R.; Luck, C.F.

1995-10-03

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between {minus}15 C and 150 C.

Cathode for an electrochemical cell

DOEpatents

Bates, John B.; Dudney, Nancy J.; Gruzalski, Greg R.; Luck, Christopher F.

2001-01-01

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Method for making an electrochemical cell

DOEpatents

Bates, John B.; Dudney, Nancy J.

1996-01-01

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Switchable vanadium oxide films by a sol-gel process

NASA Astrophysics Data System (ADS)

Partlow, D. P.; Gurkovich, S. R.; Radford, K. C.; Denes, L. J.

1991-07-01

Thin polycrystalline films of VO2 and V2O3 were deposited on a variety of substrates using a sol-gel process. The orientation, microstructure, optical constants, and optical and electrical switching behavior are presented. These films exhibited sharp optical switching behavior even on an amorphous substrate such as fused silica. The method yields reproducible results and is amenable to the coating of large substrates and curved surfaces such as mirrors and lenses.

High quality transparent conducting oxide thin films

DOEpatents

Gessert, Timothy A.; Duenow, Joel N.; Barnes, Teresa; Coutts, Timothy J.

2012-08-28

A transparent conducting oxide (TCO) film comprising: a TCO layer, and dopants selected from the elements consisting of Vanadium, Molybdenum, Tantalum, Niobium, Antimony, Titanium, Zirconium, and Hafnium, wherein the elements are n-type dopants; and wherein the transparent conducting oxide is characterized by an improved electron mobility of about 42 cm.sup.2/V-sec while simultaneously maintaining a high carrier density of .about.4.4e.times.10.sup.20 cm.sup.-3.

LPG ammonia and nitrogen dioxide gas sensing properties of nanostructured polypyrrole thin film

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bagul, Sagar B., E-mail: nano.sbbagul@gmail.com; Upadhye, Deepak S.; Sharma, Ramphal, E-mail: rps.phy@gmail.com

Nanostructured Polypyrrole thin film was synthesized by easy and economic chemical oxidative polymerization technique on glass at room temperature. The prepared thin film of Polypyrrole was characterized by optical absorbance study by UV-visible spectroscopy and electrical study by I-V measurement system. The optical absorbance spectrum of Polypyrrole shows two fundamental peaks in region of 420 and 890 nm, which confirms the formation of Polypyrrole on glass substrate. The I-V graph of nanostructured Polypyrrole represents the Ohmic nature. Furthermore, the thin film of Polypyrrole was investigated by Scanning electron microscopy for surface morphology study. The SEM micrograph represents spherical nanostructured morphology ofmore » Polypyrrole on glass substrate. In order to investigate gas sensing properties, 100 ppm of LPG, Ammonia and Nitrogen Dioxide were injected in the gas chamber and magnitude of resistance has been recorded as a function of time in second. It was observed that nanostructured Polypyrrole thin film shows good sensing behavior at room temperature.« less

LPG ammonia and nitrogen dioxide gas sensing properties of nanostructured polypyrrole thin film

NASA Astrophysics Data System (ADS)

Bagul, Sagar B.; Upadhye, Deepak S.; Sharma, Ramphal

2016-05-01

Nanostructured Polypyrrole thin film was synthesized by easy and economic chemical oxidative polymerization technique on glass at room temperature. The prepared thin film of Polypyrrole was characterized by optical absorbance study by UV-visible spectroscopy and electrical study by I-V measurement system. The optical absorbance spectrum of Polypyrrole shows two fundamental peaks in region of 420 and 890 nm, which confirms the formation of Polypyrrole on glass substrate. The I-V graph of nanostructured Polypyrrole represents the Ohmic nature. Furthermore, the thin film of Polypyrrole was investigated by Scanning electron microscopy for surface morphology study. The SEM micrograph represents spherical nanostructured morphology of Polypyrrole on glass substrate. In order to investigate gas sensing properties, 100 ppm of LPG, Ammonia and Nitrogen Dioxide were injected in the gas chamber and magnitude of resistance has been recorded as a function of time in second. It was observed that nanostructured Polypyrrole thin film shows good sensing behavior at room temperature.

Electron and hole dynamics in the electronic and structural phase transitions of VO2

NASA Astrophysics Data System (ADS)

Haglund, Richard

2015-03-01

The ultrafast, optically induced insulator-to-metal transition (IMT) and the associated structural phase transition (SPT) in vanadium dioxide (VO2) have been studied for over a decade. However, only recently have effects due to the combined presence of electron-hole pairs and injected electrons been observed. Here we compare and contrast IMT dynamics when both hot electrons and optically excited electron-hole pairs are involved, in (1) thin films of VO2 overlaid by a thin gold foil, in which hot electrons are generated by 1.5 eV photons absorbed in the foil and accelerated through the VO2 by an applied electric field; (2) VO2 nanoparticles covered with a sparse mesh of gold nanoparticles averaging 20-30 nm in diameter in which hot electrons are generated by resonant excitation and decay of the localized surface plasmon; and (3) bare VO2 thin films excited by intense near-single-cycle THz pulses. In the first case, the IMT is driven by excitation of the bulk gold plasmon, and the SPT appears on a few-picosecond time scale. In the second case, density-functional calculations indicate that above a critical carrier density, the addition of a single electron to a 27-unit supercell drives the catastrophic collapse of the coherent phonon associated with, and leading to, the SPT. In the third case, sub-bandgap-energy photons (approximately 0.1 eV) initiate the IMT, but exhibit the same sub-100 femtosecond switching time and coherent phonon dynamics as observed when the IMT is initiated by 1.5 eV photons. This suggests that the underlying mechanism must be quite different, possibly THz-field induced interband tunneling of spatially separated electron-hole pairs. The implications of these findings for ultrafast switching in opto-electronic devices - such as hybrid VO2 silicon ring resonators - are briefly considered. Support from the National Science Foundation (DMR-1207407), the Office of Science, U.S. Department of Energy (DE-FG02-01ER45916) and the Defense Threat-Reduction Agency (HDTRA1-10-1-0047) for these studies is gratefully acknowledged.

Growth and Etch Rate Study of Low Temperature Anodic Silicon Dioxide Thin Films

PubMed Central

Ashok, Akarapu; Pal, Prem

2014-01-01

Silicon dioxide (SiO2) thin films are most commonly used insulating films in the fabrication of silicon-based integrated circuits (ICs) and microelectromechanical systems (MEMS). Several techniques with different processing environments have been investigated to deposit silicon dioxide films at temperatures down to room temperature. Anodic oxidation of silicon is one of the low temperature processes to grow oxide films even below room temperature. In the present work, uniform silicon dioxide thin films are grown at room temperature by using anodic oxidation technique. Oxide films are synthesized in potentiostatic and potentiodynamic regimes at large applied voltages in order to investigate the effect of voltage, mechanical stirring of electrolyte, current density and the water percentage on growth rate, and the different properties of as-grown oxide films. Ellipsometry, FTIR, and SEM are employed to investigate various properties of the oxide films. A 5.25 Å/V growth rate is achieved in potentiostatic mode. In the case of potentiodynamic mode, 160 nm thickness is attained at 300 V. The oxide films developed in both modes are slightly silicon rich, uniform, and less porous. The present study is intended to inspect various properties which are considered for applications in MEMS and Microelectronics. PMID:24672287

REDUCTION OF INORGANIC COMPOUNDS WITH MOLECULAR HYDROGEN BY MICROCOCCUS LACTILYTICUS I.

PubMed Central

Woolfolk, C. A.; Whiteley, H. R.

1962-01-01

Woolfolk, C. A. (University of Washington, Seattle) and H. R. Whiteley. Reduction of inorganic compounds with molecular hydrogen by Micrococcus lactilyticus. I. Stoichiometry with compounds of arsenic, selenium, tellurium, transition and other elements. J. Bacteriol. 84:647–658. 1962.—Extracts of Micrococcus lactilyticus (Veillonella alcalescens) oxidize molecular hydrogen at the expense of certain compounds of arsenic, bismuth, selenium, tellurium, lead, thallium, vanadium, manganese, iron, copper, molybdenum, tungsten, osmium, ruthenium, gold, silver, and uranium, as well as molecular oxygen. Chemical and manometric data indicate that the following reductions are essentially quantitative: arsenate to arsenite, pentavalent and trivalent bismuth to the free element, selenite via elemental selenium to selenide, tellurate and tellurite to tellurium, lead dioxide and manganese dioxide to the divalent state, ferric to ferrous iron, osmium tetroxide to osmate ion, osmium dioxide and trivalent osmium to the metal, uranyl uranium to the tetravalent state, vanadate to the level of vanadyl, and polymolybdate ions to molybdenum blues with an average valence for molybdenum of +5. The results of a study of certain other hydrogenase-containing bacteria with respect to their ability to carry out some of the same reactions are also presented. PMID:14001842

Structure and Dynamics with Ultrafast Electron Microscopes

NASA Astrophysics Data System (ADS)

Siwick, Bradley

In this talk I will describe how combining ultrafast lasers and electron microscopes in novel ways makes it possible to directly `watch' the time-evolving structure of condensed matter, both at the level of atomic-scale structural rearrangements in the unit cell and at the level of a material's nano- microstructure. First, I will briefly describe my group's efforts to develop ultrafast electron diffraction using radio- frequency compressed electron pulses in the 100keV range, a system that rivals the capabilities of xray free electron lasers for diffraction experiments. I will give several examples of the new kinds of information that can be gleaned from such experiments. In vanadium dioxide we have mapped the detailed reorganization of the unit cell during the much debated insulator-metal transition. In particular, we have been able to identify and separate lattice structural changes from valence charge density redistribution in the material on the ultrafast timescale. In doing so we uncovered a previously unreported optically accessible phase/state of vanadium dioxide that has monoclinic crystallography like the insulator, but electronic structure and properties that are more like the rutile metal. We have also combined these dynamic structural measurements with broadband ultrafast spectroscopy to make detailed connections between structure and properties for the photoinduced insulator to metal transition. Second, I will show how dynamic transmission electron microscopy (DTEM) can be used to make direct, real space images of nano-microstructural evolution during laser-induced crystallization of amorphous semiconductors at unprecedented spatio-temporal resolution. This is a remarkably complex process that involves several distinct modes of crystal growth and the development of intricate microstructural patterns on the nanosecond to ten microsecond timescales all of which can be imaged directly with DTEM.

Titanium dioxide thin films by atomic layer deposition: a review

NASA Astrophysics Data System (ADS)

Niemelä, Janne-Petteri; Marin, Giovanni; Karppinen, Maarit

2017-09-01

Within its rich phase diagram titanium dioxide is a truly multifunctional material with a property palette that has been shown to span from dielectric to transparent-conducting characteristics, in addition to the well-known catalytic properties. At the same time down-scaling of microelectronic devices has led to an explosive growth in research on atomic layer deposition (ALD) of a wide variety of frontier thin-film materials, among which TiO2 is one of the most popular ones. In this topical review we summarize the advances in research of ALD of titanium dioxide starting from the chemistries of the over 50 different deposition routes developed for TiO2 and the resultant structural characteristics of the films. We then continue with the doped ALD-TiO2 thin films from the perspective of dielectric, transparent-conductor and photocatalytic applications. Moreover, in order to cover the latest trends in the research field, both the variously constructed TiO2 nanostructures enabled by ALD and the Ti-based hybrid inorganic-organic films grown by the emerging ALD/MLD (combined atomic/molecular layer deposition) technique are discussed.

Photoconductivity in nanostructured sulfur-doped V2O5 thin films

NASA Astrophysics Data System (ADS)

Mousavi, M.; Yazdi, Sh. Tabatabai

2016-03-01

In this paper, S-doped vanadium oxide thin films with doping levels up to 40 at.% are prepared via spray pyrolysis method on glass substrates, and the effect of S-doping on the structural and photoconductivity related properties of β-V2O5 thin films is studied. The results show that most of the films have been grown in the tetragonal β-V2O5 phase structure with the preferred orientation along [200]. With increasing the doping level, the samples tend to be amorphous. The structure of the samples reveals to be nanobelt-shaped whose width decreases from nearly 100 nm to 40 nm with S concentration. The photoconductivity measurements show that by increasing the S-doping level, the photosensitivity increases, which is due to the prolonged electron’s lifetime as a result of enhanced defect states acting as trap levels.

X-Ray Spectroscopy of Ultra-Thin Oxide/Oxide Heteroepitaxial Films: A Case Study of Single-Nanometer VO2/TiO2

PubMed Central

Quackenbush, Nicholas F.; Paik, Hanjong; Woicik, Joseph C.; Arena, Dario A.; Schlom, Darrell G.; Piper, Louis F. J.

2015-01-01

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe a low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Our results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. More generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions. PMID:28793516

X-ray Spectroscopy of Ultra-thin Oxide/oxide Heteroepitaxial Films: A Case Study of Single-nanometer VO2/TiO2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Quackenbush, Nicholas F.; Paik, Hanjong; Woicik, Joseph C.

2015-08-21

Epitaxial ultra-thin oxide films can support large percent level strains well beyond their bulk counterparts, thereby enabling strain-engineering in oxides that can tailor various phenomena. At these reduced dimensions (typically < 10 nm), contributions from the substrate can dwarf the signal from the epilayer, making it difficult to distinguish the properties of the epilayer from the bulk. This is especially true for oxide on oxide systems. Here, we have employed a combination of hard X-ray photoelectron spectroscopy (HAXPES) and angular soft X-ray absorption spectroscopy (XAS) to study epitaxial VO2/TiO2 (100) films ranging from 7.5 to 1 nm. We observe amore » low-temperature (300 K) insulating phase with evidence of vanadium-vanadium (V-V) dimers and a high-temperature (400 K) metallic phase absent of V-V dimers irrespective of film thickness. Results confirm that the metal insulator transition can exist at atomic dimensions and that biaxial strain can still be used to control the temperature of its transition when the interfaces are atomically sharp. Generally, our case study highlights the benefits of using non-destructive XAS and HAXPES to extract out information regarding the interfacial quality of the epilayers and spectroscopic signatures associated with exotic phenomena at these dimensions.« less

V x In (2–x) S 3 Intermediate Band Absorbers Deposited by Atomic Layer Deposition

DOE PAGES

McCarthy, Robert F.; Weimer, Matthew S.; Haasch, Richard T.; ...

2016-03-21

Substitutional alloys of several thin film semiconductors have been proposed as intermediate band (IB) materials for use in next-generation photovoltaics, which aim to utilize a larger fraction of the solar spectrum without sacrificing significant photovoltage. Here, we demonstrate a novel approach to IB material growth, namely atomic layer deposition (ALD), to enable unique control over substitutional-dopant location and density. Two new ALD processes for vanadium sulfide incorporation are introduced, one of which incorporates a vanadium (III) amidinate previously untested for ALD. We synthesize the first thin film V xIn (2-x)S 3 intermediate band semiconductors, using this process, and further demonstratemore » that the V:In ratio, and therefore intraband gap density of states, can be finely tuned according to the ALD dosing schedule. Deposition on a crystalline In 2S 3 underlayer promotes the growth of a tetragonal β-In 2S 3-like phase V xIn (2-x)S 3, which exhibits a distinct sub-band gap absorption peak with onset near 1.1 eV in agreement with computational predictions. But, the V xIn (2-x)S 3 films lack the lower energy transition predicted for a partially filled IB, and photoelectrochemical devices reveal a photocurrent response only from illumination with energy sufficient to span the parent band-gap.« less

Core-shell VO2@TiO2 nanorods that combine thermochromic and photocatalytic properties for application as energy-saving smart coatings

PubMed Central

Li, Yamei; Ji, Shidong; Gao, Yanfeng; Luo, Hongjie; Kanehira, Minoru

2013-01-01

Vanadium dioxide (VO2) is a Mott phase transition compound that can be applied as a thermochromic smart material for energy saving and comfort, and titanium dioxide (TiO2) is a well-known photocatalyst for self-cleaning coatings. In this paper, we report a VO2@TiO2 core-shell structure, in which the VO2 nanorod core exhibits a remarkable modulation ability for solar infrared light, and the TiO2 anatase shell exhibits significant photocatalytic degradation of organic dye. In addition, the TiO2 overcoating not only increased the luminous transmittance of VO2 based on an antireflection effect, but also modified the intrinsic colour of VO2 films from yellow to light blue. The TiO2 also enhanced the chemical stability of VO2 against oxidation. This is the first report of such a single nanoparticle structure with both thermochromic and photocatalytic properties that offer significant potential for creating a multifunctional smart coating. PMID:23546301

Core-shell VO2@TiO2 nanorods that combine thermochromic and photocatalytic properties for application as energy-saving smart coatings.

PubMed

Li, Yamei; Ji, Shidong; Gao, Yanfeng; Luo, Hongjie; Kanehira, Minoru

2013-01-01

Vanadium dioxide (VO2) is a Mott phase transition compound that can be applied as a thermochromic smart material for energy saving and comfort, and titanium dioxide (TiO2) is a well-known photocatalyst for self-cleaning coatings. In this paper, we report a VO2@TiO2 core-shell structure, in which the VO2 nanorod core exhibits a remarkable modulation ability for solar infrared light, and the TiO2 anatase shell exhibits significant photocatalytic degradation of organic dye. In addition, the TiO2 overcoating not only increased the luminous transmittance of VO2 based on an antireflection effect, but also modified the intrinsic colour of VO2 films from yellow to light blue. The TiO2 also enhanced the chemical stability of VO2 against oxidation. This is the first report of such a single nanoparticle structure with both thermochromic and photocatalytic properties that offer significant potential for creating a multifunctional smart coating.

Thermoelectric properties of V2O5 thin films deposited by thermal evaporation

NASA Astrophysics Data System (ADS)

Santos, R.; Loureiro, J.; Nogueira, A.; Elangovan, E.; Pinto, J. V.; Veiga, J. P.; Busani, T.; Fortunato, E.; Martins, R.; Ferreira, I.

2013-10-01

This work reports the structural, optical, electrical and thermoelectric properties of vanadium pentoxide (V2O5) thin films deposited at room temperature by thermal evaporation on Corning glass substrates. A post-deposition thermal treatment up to 973 K under atmospheric conditions induces the crystallization of the as-deposited amorphous films with an orthorhombic V2O5 phase with grain sizes around 26 nm. As the annealing temperature rises up to 773 K the electrical conductivity increases. The films exhibit thermoelectric properties with a maximum Seebeck coefficient of -218 μV/K and electrical conductivity of 5.5 (Ω m)-1. All the films show NIR-Vis optical transmittance above 60% and optical band gap of 2.8 eV.

Electra-optical device including a nitrogen containing electrolyte

DOEpatents

Bates, John B.; Dudney, Nancy J.; Gruzalski, Greg R.; Luck, Christopher F.

1995-01-01

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Electrolyte for an electrochemical cell

DOEpatents

Bates, John B.; Dudney, Nancy J.

1997-01-01

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte amorphous lithium phosphorus oxynitride which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Electrolyte for an electrochemical cell

DOEpatents

Bates, J.B.; Dudney, N.J.

1997-01-28

Described is a thin-film battery, especially a thin-film microbattery, and a method for making the same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte amorphous lithium phosphorus oxynitride which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between {minus}15 C and 150 C. 9 figs.

Method of making an electrolyte for an electrochemical cell

DOEpatents

Bates, J.B.; Dudney, N.J.

1996-04-30

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between {minus}15 C and 150 C. 9 figs.

Method of making an electrolyte for an electrochemical cell

DOEpatents

Bates, John B.; Dudney, Nancy J.

1996-01-01

Described is a thin-film battery, especially a thin-film microbattery, and a method for making same having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between -15.degree. C. and 150.degree. C.

Method for making an electrochemical cell

DOEpatents

Bates, J.B.; Dudney, N.J.

1996-10-22

Described is a thin-film battery, especially a thin-film microbattery, and a method for making the same, having application as a backup or primary integrated power source for electronic devices. The battery includes a novel electrolyte which is electrochemically stable and does not react with the lithium anode and a novel vanadium oxide cathode. Configured as a microbattery, the battery can be fabricated directly onto a semiconductor chip, onto the semiconductor die or onto any portion of the chip carrier. The battery can be fabricated to any specified size or shape to meet the requirements of a particular application. The battery is fabricated of solid state materials and is capable of operation between {minus}15 C and 150 C. 9 figs.

Electrochemical Cell for Obtaining Oxygen from Carbon Dioxide Atmospheres

NASA Technical Reports Server (NTRS)

Hooker, Matthew; Rast, H. Edward; Rogers, Darren K.; Borja, Luis; Clark, Kevin; Fleming, Kimberly; Mcgurren, Michael; Oldaker, Tom; Sweet, Nanette

1989-01-01

To support human life on the Martian surface, an electrochemical device will be required to obtain oxygen from the carbon dioxide rich atmosphere. The electrolyte employed in such a device must be constructed from extremely thin, dense membranes to efficiently acquire the oxygen necessary to support life. A forming process used industrially in the production of multilayer capacitors and electronic substrates was adapted to form the thin membranes required. The process, known as the tape casting, involves the suspension consisting of solvents and binders. The suspension is passed under a blade, resulting in the production of ceramic membranes between 0.1 and 0.5 mm thick. Once fired, the stabilized zirconia membranes were assembled into the cell design by employing a zirconium phosphate solution as the sealing agent. The resulting ceramic-to-ceramic seals were found to be structurally sound and gas-tight. Furthermore, by using a zirconia-based solution to assemble the cell, the problem of a thermal expansion mismatch was alleviated. By adopting an industrial forming process to produce thin membranes, an electrochemical cell for obtaining oxygen from carbon dioxide was produced. The proposed cell design is unique in that it does not require a complicated manifold system for separating the various gases present in this process, nor does it require a series of complex electrical connections. Thus, the device can reliably obtain the vital oxygen supply from the toxic carbon dioxide atmosphere.

Low resistivity W{sub x}V{sub 1−x}O{sub 2}-based multilayer structure with high temperature coefficient of resistance for microbolometer applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Émond, Nicolas; Hendaoui, Ali; Chaker, Mohamed, E-mail: chaker@emt.inrs.ca

2015-10-05

Materials that exhibit semiconductor-to-metal phase transition (SMT) are commonly used as sensing layers for the fabrication of uncooled microbolometers. The development of highly responsive microbolometers would benefit from using a sensing material that possesses a large thermal coefficient of resistance (TCR) close to room temperature and a resistivity low enough to compromise between noise reduction and high TCR, while it should also satisfies the requirements of current CMOS technology. Moreover, a TCR that remains constant when the IR camera surrounding temperature varies would contribute to achieve reliable temperature measurements without additional corrections steps for TCR temperature dependence. In this paper,more » the characteristics of the SMT occurring in undoped and tungsten-doped vanadium dioxide thin films deposited on LaAlO{sub 3} (100) substrates are investigated. They are further exploited to fabricate a W{sub x}V{sub 1−x}O{sub 2} (0 ≤ x ≤ 2.5) multilayer structure exhibiting a bottom-up gradient of tungsten content. This MLS displays a combination of properties that is promising for application to uncooled microbolometer, such as a large TCR of −10.4%/ °C and low resistivity values ranging from 0.012 to 0.10 Ω-cm over the temperature range 22 °C–42 °C.« less

Optically imprinted reconfigurable photonic elements in a VO{sub 2} nanocomposite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jostmeier, Thorben; Betz, Markus; Zimmer, Johannes

We investigate the optical and thermal hysteresis of single-domain vanadium dioxide nanocrystals fabricated by ion beam synthesis in a fused silica matrix. The nanocrystals exhibit a giant hysteresis, which permits to optically generate a long-time stable supercooled metallic phase persistent down to practically room temperature. Spatial patterns of supercooled and insulating nanocrystals feature a large dielectric contrast, in particular, for telecom wavelengths. We utilize this contrast to optically imprint reconfigurable photonic elements comprising diffraction gratings as well as on- and off-axis zone plates. The structures allow for highly repetitive (>10{sup 4}) cycling through the phase transition without structural damage.

Nanostructured Gd3+-TiO2 surfaces for self-cleaning application

NASA Astrophysics Data System (ADS)

Saif, M.; El-Molla, S. A.; Aboul-Fotouh, S. M. K.; Ibrahim, M. M.; Ismail, L. F. M.; Dahn, Douglas C.

2014-06-01

Preparation of self-cleaning surfaces based on lanthanide modified titanium dioxide nanoparticles has rarely been reported. In the present work, gadolinium doped titanium dioxide thin films (x mol Gd3+-TiO2 where x = 0.000, 0.005, 0.008, 0.010, 0.020 and 0.030 mol) were synthesized by sol-gel method and deposited using doctor-blade method. These films were characterized by studying their structural, optical and electrical properties. Doping with gadolinium decreases the band gap energy and increase conductivity of thin films. The photo self-cleaning activity in term of quantitative determination of the active oxidative species (rad OH) produced on the thin film surfaces was evaluated using fluorescent probe method. The results show that, the highly active thin film is the 0.020 Gd3+-TiO2. The structural, morphology, optical, electrical and photoactivity properties of Gd3+-TiO2 thin films make it promising surfaces for self-cleaning application. Mineralization of commercial textile dye (Remazol Red RB-133, RR) and durability using 0.020Gd3+-TiO2 film surface was studied.

Fast response of sprayed vanadium pentoxide (V2O5) nanorods towards nitrogen dioxide (NO2) gas detection

NASA Astrophysics Data System (ADS)

Mane, A. A.; Suryawanshi, M. P.; Kim, J. H.; Moholkar, A. V.

2017-05-01

The V2O5 nanorods have been successfully spray deposited at optimized substrate temperature of 400 °C onto the glass substrates using vanadium trichloride (VCl3) solution of different concentrations. The effect of solution concentration on the physicochemical and NO2 gas sensing properties of sprayed V2O5 nanorods is studied at different operating temperatures and gas concentrations. The XRD study reveals the formation of V2O5 having an orthorhombic symmetry. The FE-SEM micrographs show the nanorods-like morphology of V2O5. The AFM micrographs exhibit a well covered granular surface topography. For direct allowed transition, the band gap energy values are found to be decreased from 2.45 eV to 2.42 eV. The nanorods deposited with 30 mM solution concentration shows the maximum response of 24.2% for 100 ppm NO2 gas concentration at an operating temperature of 200 °C with response and recovery times of 13 s and 140 s, respectively. Finally, the chemisorption mechanism of NO2 gas on the V2O5 nanorods is discussed.

Influence of architecture and material properties on vanadium redox flow battery performance

NASA Astrophysics Data System (ADS)

Houser, Jacob; Clement, Jason; Pezeshki, Alan; Mench, Matthew M.

2016-01-01

This publication reports a design optimization study of all-vanadium redox flow batteries (VRBs), including performance testing, distributed current measurements, and flow visualization. Additionally, a computational flow simulation is used to support the conclusions made from the experimental results. This study demonstrates that optimal flow field design is not simply related to the best architecture, but is instead a more complex interplay between architecture, electrode properties, electrolyte properties, and operating conditions which combine to affect electrode convective transport. For example, an interdigitated design outperforms a serpentine design at low flow rates and with a thin electrode, accessing up to an additional 30% of discharge capacity; but a serpentine design can match the available discharge capacity of the interdigitated design by increasing the flow rate or the electrode thickness due to differing responses between the two flow fields. The results of this study should be useful to design engineers seeking to optimize VRB systems through enhanced performance and reduced pressure drop.

Auger electron diffraction study of V/Fe(100) interface formation

NASA Astrophysics Data System (ADS)

Huttel, Y.; Avila, J.; Asensio, M. C.; Bencok, P.; Richter, C.; Ilakovac, V.; Heckmann, O.; Hricovini, K.

1998-05-01

Vanadium atoms present a magnetic moment different to zero when they are part of a thin film deposited on Fe or as a bimetallic Fe-V alloy. The understanding of this phenomenon can only be achieved with a correct structural description of these types of systems. We report an Auger electron diffraction investigation of V films grown on body cubic centred (b.c.c.) Fe(100) substrates. Angular-scanned Auger electron diffraction (AED) patterns of V L 23M 23M 4 (473 eV) and Fe L 3VV (703 eV) show the formation of a well-ordered V/Fe interface even at room temperature. The AED patterns of V films in the range of vanadium submonolayer provide evidence of an isotropic Auger emission, indicating the absence of interdiffusion of V atoms into the Fe substrate and absence of cluster growth of the V film. The annealing of these films up to 400°C does not activate the substitution of the topmost Fe surface layers by V atoms.

Structural Changes in the Vanadium Sample Surface Induced by Pulsed High-Temperature Deuterium Plasma and Deuterium Ion Fluxes

NASA Astrophysics Data System (ADS)

Borovitskaya, I. V.; Pimenov, V. N.; Gribkov, V. A.; Padukh, M.; Bondarenko, G. G.; Gaidar, A. I.; Paramonova, V. V.; Morozov, E. V.

2017-11-01

The structural changes in the vanadium sample surface are studied as functions of the conditions of irradiation by pulsed high-temperature deuterium plasma and deuterium ion fluxes in the Plasma Focus installation. It is found that processes of partial evaporation, melting, and crystallization of the surface layer of vanadium samples take place in the plasma flux power density range q = 108-1010 W/cm2 and the ion flux density range q = 1010-1012 W/cm2. The surface relief is wavelike. There are microcracks, gas-filled bubbles (blisters), and traces of fracture on the surface. The blisters are failed in the solid state. The character of blister fracture is similar to that observed during usual ion irradiation in accelerators. The samples irradiated at relatively low power density ( q = 107-108 W/cm2) demonstrate the ejection of microparticles (surface fragments) on the side facing plasma. This process is assumed to be due to the fact that the unloading wave formed in the sample-target volume reaches its irradiated surface. Under certain irradiation conditions (sample-anode distance, the number of plasma pulses), a block microstructure with block sizes of several tens of microns forms on the sample surfaces. This structure is likely to form via directional crack propagation upon cooling of a thin melted surface layer.

Fundamental Studies on Confinement Effects in Ionic Conduction and Inversion Layers in 2-D Single Crystal Free Standing Oxide Membranes

DTIC Science & Technology

2014-02-14

properties of VO2 films and membranes and compare the results with annealing VO2 films and membranes in hydrogen to provide insight into the doping...2-dimensional free standing membrane with correlated oxides may also lead to new insights into mesoscopic electronic phenomena. Vanadium oxide ( VO2 ...well as for potential applications in switching devices. While studies have been conducted on thin films, hybrid layers of VO2 supported on other

Speciation of vanadium in Chinese cabbage (Brassica rapa L.) and soils in response to different levels of vanadium in soils and cabbage growth.

PubMed

Tian, Liyan; Yang, Jinyan; Alewell, Christine; Huang, Jen-How

2014-09-01

This study highlights the accumulation and speciation of vanadium in Chinese cabbage (Brassica rapa L.) in relation to the speciation of soil vanadium with pot experiments at 122-622mgVkg(-1) by spiking NH4VO3. Cabbage planting decreased the bioavailable and residual vanadium based on sequential extraction, leading to enrichment of oxalate-extractable vanadium in soils. The biomass production increased with increasing concentrations of soil vanadium from 122 to 372mgVkg(-1), probably due to the increasing nitrogen availability and low vanadium availability in our soils with a consequent low vanadium toxicity. Although the concentrations of root vanadium (14.4-24.9mgVkg(-1)) related positively with soil vanadium, the bio-dilution alleviated the increase of leaf vanadium (2.1-2.7mgVkg(-1)). The predominance of vanadium(IV) in leaves (∼60-80% of total vanadium) indicates bio-reduction of vanadium in Chinese cabbage, since the mobile vanadium in oxic soils was usually pentavalent. Approximately 15-20% of the leaf vanadium was associated with recalcitrant leaf tissues. The majority of leaf vanadium was water and ethanol extractable, which is considered mobile and may cause more toxic effects on Chinese cabbage. Copyright © 2014 Elsevier Ltd. All rights reserved.

Selective Metallization of Well Aligned PS-b-P2VP Block Copolymers in Thin Films and in Confined Geometries

NASA Astrophysics Data System (ADS)

Sievert, James D.; Watkins, James J.; Russell, Thomas P.

2006-03-01

Well aligned, microphase-separated structures of styrene-2-vinylpyridine block copolymers are being used as templates for macromolecule-metal nanocomposites. These composites are either prepared as thin films or confined in nanoporous aluminum oxide membranes. Under optimal conditions, templates are prepared as thin films or confined nanorods and metallized without disturbing the ordered structure. We have developed a procedure that deposits metal within the polymer using supercritical carbon dioxide-soluble metal precursors. The use of supercritical carbon dioxide allows for selective metallization of the polymer at or below the glass transition, without disrupting the morphology. In addition, similar procedures have been investigated using metal salts and acids. Using these techniques, metals and metal-sulfides including silver, gold, platinum and zinc sulfide have been selectively deposited.

Improvement of water resistance and dimensional stability of wood through titanium dioxide coating

Treesearch

Qingfeng Sun; Haipeng Yu; Yixing Liu; Jian Li; Yun Lu; John F. Hunt

2010-01-01

Moisture absorption and dimensional distortion are the major drawbacks of wood utilization as building material. In this study, poplar wood coated with a thin layer of titanium dioxide (TiO2) was prepared by the cosolvent-controlled hydrothermal method. Subsequently, its moisture absorption and dimensional stability were examined. Scanning...

Optimizing the withdrawal speed using dip coating for optical sensor

NASA Astrophysics Data System (ADS)

Samat, S. F. A.; Sarah, M. S. P.; Idros, M. Faizol Md; Rusop, M.

2018-05-01

The processing route of sol-gel has been used for many productions of thin film using metal oxide such as titanium dioxide, zinc oxide, carbon dioxide and so on. For this research the thin film phase was studied has high transmittance using dip coating technique with different withdrawal speed for optical sensing. The result obtained from optical transmittance spectra that transmits at 30nm and bend at 350nm to 800nm was in the visible light wavelength range. From the data, the withdrawal speed was low at 5s and 10s could give the highest transmittance which were 90.41% and 87.91% respectively.

Metal-organic framework thin films on a surface of optical fibre long period grating for chemical sensing

NASA Astrophysics Data System (ADS)

Hromadka, J.; Tokay, B.; James, S.; Korposh, S.

2017-04-01

An optical fibre long period grating (LPG) modified with a thin film of HKUST-1, a material from metal organic framework (MOF) family, was employed for the detection of carbon dioxide. The sensing mechanism is based on the measurement of the change of the refractive index (RI) of the coating that is induced by the penetration of CO2 molecules into the HKUST-1 pores. The responses of the resonance bands in the transmission spectrum of an LPG modified with 40 layers of HKUST-1 upon exposure to carbon dioxide in mixture with nitrogen were investigated.

Nanoparticle Thin Films for Gas Sensors Prepared by Matrix Assisted Pulsed Laser Evaporation

PubMed Central

Caricato, Anna Paola; Luches, Armando; Rella, Roberto

2009-01-01

The matrix assisted pulsed laser evaporation (MAPLE) technique has been used for the deposition of metal dioxide (TiO2, SnO2) nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al2O3 substrates. A rather uniform distribution of TiO2 nanoparticles with an average size of about 10 nm and of SnO2 nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG) inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit) towards ethanol and acetone are presented. PMID:22574039

Nanoparticle thin films for gas sensors prepared by matrix assisted pulsed laser evaporation.

PubMed

Caricato, Anna Paola; Luches, Armando; Rella, Roberto

2009-01-01

The matrix assisted pulsed laser evaporation (MAPLE) technique has been used for the deposition of metal dioxide (TiO(2), SnO(2)) nanoparticle thin films for gas sensor applications. For this purpose, colloidal metal dioxide nanoparticles were diluted in volatile solvents, the solution was frozen at the liquid nitrogen temperature and irradiated with a pulsed excimer laser. The dioxide nanoparticles were deposited on Si and Al(2)O(3) substrates. A rather uniform distribution of TiO(2) nanoparticles with an average size of about 10 nm and of SnO(2) nanoparticles with an average size of about 3 nm was obtained, as demonstrated by high resolution scanning electron microscopy (SEM-FEG) inspections. Gas-sensing devices based on the resistive transduction mechanism were fabricated by depositing the nanoparticle thin films onto suitable rough alumina substrates equipped with interdigitated electrical contacts and heating elements. Electrical characterization measurements were carried out in controlled environment. The results of the gas-sensing tests towards low concentrations of ethanol and acetone vapors are reported. Typical gas sensor parameters (gas responses, response/recovery time, sensitivity, and low detection limit) towards ethanol and acetone are presented.

Surface Structure and Photocatalytic Activity of Nano-TiO2 Thin Film

EPA Science Inventory

Controlled titanium dioxide (TiO2) thin films were deposited on stainless steel surfaces using flame aerosol synthetic technique, which is a one-step coating process, that doesn’t require further calcination. Solid state characterization of the coatings was conducted by different...

Enzymatically active high-flux selectively gas-permeable membranes

DOEpatents

Jiang, Ying-Bing; Cecchi, Joseph L.; Rempe, Susan; FU, Yaqin; Brinker, C. Jeffrey

2016-01-26

An ultra-thin, catalyzed liquid transport medium-based membrane structure fabricated with a porous supporting substrate may be used for separating an object species such as a carbon dioxide object species. Carbon dioxide flux through this membrane structures may be several orders of magnitude higher than traditional polymer membranes with a high selectivity to carbon dioxide. Other gases such as molecular oxygen, molecular hydrogen, and other species including non-gaseous species, for example ionic materials, may be separated using variations to the membrane discussed.

Growth and characterization of V2 O5 thin film on conductive electrode.

PubMed

Mola, Genene T; Arbab, Elhadi A A; Taleatu, Bidini A; Kaviyarasu, K; Ahmad, Ishaq; Maaza, M

2017-02-01

Vanadium pentoxide V 2 O 5 thin films were grown at room temperature on ITO coated glass substrates by electrochemical deposition. The resulting films were annealed at 300, 400 and 500°C for 1 h in ambient environment. The effect of heat treatment on the films properties such as surface morphology, crystal structure, optical absorption and photoluminescence were investigated. The x-ray diffraction study showed that the films are well crystallized with temperatures. Strong reflection from plane (400) indicated the film's preferred growth orientation. The V 2 O 5 films are found to be highly transparent across the visible spectrum and the measured photoluminescence quenching suggested the film's potential application in OPV device fabrication. © 2016 The Authors Journal of Microscopy © 2016 Royal Microscopical Society.

Role of annealing duration on the microstructure and electrochemical performance of β-V2O5 thin films

NASA Astrophysics Data System (ADS)

Jeyalakshmi, K.; Muralidharan, G.

2014-03-01

Vanadium pentoxide thin films have been prepared by sol-gel spin coating method. The eight-layered films coated on fluorine-doped tin oxide substrate and glass substrate were subjected to different durations of annealing under a constant annealing temperature of 300 °C from 30 to 120 min. The X-ray diffraction spectrum reveals crystallinity along (2 0 0) direction. The SEM images of these films show the variation in the surface morphology with increase in annealing duration. The supercapacitor behaviour has been studied using cyclic voltammetry technique and electrochemical impedance spectroscopy. The film annealed for 60 min exhibits a maximum specific capacitance of 346 F/g at a scan rate of 5 mV/s with a charge transfer resistance of 172 Ω.

METHOD OF FORMING A FUEL ELEMENT FOR A NUCLEAR REACTOR

DOEpatents

Layer, E.H. Jr.; Peet, C.S.

1962-01-23

A method is given for preparing a fuel element for a nuclear reactor. The method includes the steps of sandblasting a body of uranium dioxide to roughen the surface thereof, depositing a thin layer of carbon thereon by thermal decomposition of methane, and cladding the uranium dioxide body with zirconium by gas pressure bonding. (AEC)

Ultrafast far-infrared studies of vanadates &mdash Multiple routes for an insulator to metal transition

NASA Astrophysics Data System (ADS)

Liu, Mengkun

The metal insulator transition in vanadates has been studied for decades and yet new discoveries still spring up revealing new physics, especially among two of the most studied members: Vanadium sesquioxide (V20 3) and Vanadium dioxide (VO2). Although subtleties abound, both of the materials have first order insulator to metal phase transitions that are considered to be related to strong electron-electron (e-e) correlation. Further, ultrafast spectroscopy of strongly correlated materials has generated great interest in the field given the potential to dynamically distinguish the difference between electronic (spin) response versus lattice responses due to the associated characteristic energy and time scales. In this thesis, I mainly focus on utilizing ultrafast optical and THz spectroscopy to study phase transition dynamics in high quality V20 3 and VO2 thin films epitaxially grown on different substrates. The main findings of the thesis are: (1) Despite the fact that the insulator to metal transition (IMT) in V203 is electron-correlation driven, lattice distortion plays an important role. Coherent oscillations in the far-infrared conductivity are observed resulting from coherent acoustic phonon modulation of the bandwidth W. The same order of lattice distortion induces less of an effect on the electron transport in VO2 in comparison to V203. This is directly related to the difference in latent heat of the phase transitions in VO2 and V203. (2) It is possible for the IMT to occur with very little structural change in epitaxial strained VO2 films, like in the case of Cr doped or strained V203. However, in V02, this necessitates a large strain which is only possible by clamping to a substrate with larger c axis parameter through epitaxial growth. This is demonstrated for VO 2 films on TiO2 substrates. (3) Initiating an ultrafast photo-induced insulator-to-metal transition (IMT) is not only possible with above bandgap excitation, but also possible with high-field far-infrared excitation. With the help of the field enhancement in metamaterial split ring resonator gaps, we obtain picosecond THz electric field transients of several MV/cm which is sufficient to drive the insulator to metal transition in V02.

Vanadium Respiration by Geobacter metallireducens: Novel Strategy for In Situ Removal of Vanadium from Groundwater

PubMed Central

Ortiz-Bernad, Irene; Anderson, Robert T.; Vrionis, Helen A.; Lovley, Derek R.

2004-01-01

Vanadium can be an important contaminant in groundwaters impacted by mining activities. In order to determine if microorganisms of the Geobacteraceae, the predominant dissimilatory metal reducers in many subsurface environments, were capable of reducing vanadium(V), Geobacter metallireducens was inoculated into a medium in which acetate was the electron donor and vanadium(V) was the sole electron acceptor. Reduction of vanadium(V) resulted in the production of vanadium(IV), which subsequently precipitated. Reduction of vanadium(V) was associated with cell growth with a generation time of 15 h. No vanadium(V) was reduced and no precipitate was formed in heat-killed or abiotic controls. Acetate was the most effective of all the electron donors evaluated. When acetate was injected into the subsurface to enhance the growth and activity of Geobacteraceae in an aquifer contaminated with uranium and vanadium, vanadium was removed from the groundwater even more effectively than uranium. These studies demonstrate that G. metallireducens can grow via vanadium(V) respiration and that stimulating the activity of Geobacteraceae, and hence vanadium(V) reduction, can be an effective strategy for in situ immobilization of vanadium in contaminated subsurface environments. PMID:15128571

A comparative study: Effect of plasma on V2O5 nanostructured thin films

NASA Astrophysics Data System (ADS)

Singh, Megha; Kumar, Prabhat; Sharma, Rabindar K.; Reddy, G. B.

2016-05-01

Vanadium pentoxide nanostructured thin films (NSTs) have been studied to analyze the effect of plasma on nanostructures grown and morphology of films deposited using sublimation process. Nanostructured thin films were deposited on glass substrates, one in presence of oxygen plasma and other in oxygen environment (absence of plasma). Films were characterized using XRD, Raman spectroscopy, SEM and HRTEM. XRD studies revealed α-V2O5 films (orthorhombic phase) with good crystallinity. However, film deposited in presence of plasma have higher peak intensities as compared to those deposited in absence of plasma. Raman studies also support these finding following same trends of considerable increase in intensity in case of film deposited in presence of plasma. SEM micrographs makes the difference more visible, as film deposited in plasma have well defined plate like structures whereas other film have not-clearly-defined petal-like structures. HRTEM results show orthorhombic phase with 0.39 nm interplanar spacing, as reported by XRD. Results are hereby in good agreement with each other.

Sulvanite (Cu 3VS 4) nanocrystals for printable thin film photovoltaics

DOE PAGES

Chen, Ching -Chin; Stone, Kevin H.; Lai, Cheng -Yu; ...

2017-09-21

Copper Vanadium Sulfide (Cu 3VS 4), also known as sulvanite, has recently emerged as a suitable absorber material for thin film photovoltaics. The synthesis of Cu 3VS 4 nanocrystals via a rapid solvothermal route is reported for the first time. The phase purity of the Cu 3VS 4 nanocrystals has been confirmed by X-ray powder diffraction (XRD) and Raman spectroscopy, while the nanoparticle size, of about 10 nm, was evaluated by transmission electron microscopy (TEM). Successful ligand exchange with sulfide, an inorganic ligand, demonstrated that the nanoparticles are amenable to surface modifications, key element in solution processing. Further annealing ofmore » as-synthesized nanocrystals under a sulfur/argon atmosphere at 600 °C, rendered highly crystalline Cu 3VS 4 powders exhibiting an impurity that could be potentially mitigated by annealing temperature optimization. Furthermore, Cu 3VS 4, formed solely from Earth-abundant elements, could provide an inexpensive, reliable approach to fabricating solution processed thin film photovoltaic absorbers.« less

Sulvanite (Cu 3VS 4) nanocrystals for printable thin film photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Chen, Ching -Chin; Stone, Kevin H.; Lai, Cheng -Yu

Copper Vanadium Sulfide (Cu 3VS 4), also known as sulvanite, has recently emerged as a suitable absorber material for thin film photovoltaics. The synthesis of Cu 3VS 4 nanocrystals via a rapid solvothermal route is reported for the first time. The phase purity of the Cu 3VS 4 nanocrystals has been confirmed by X-ray powder diffraction (XRD) and Raman spectroscopy, while the nanoparticle size, of about 10 nm, was evaluated by transmission electron microscopy (TEM). Successful ligand exchange with sulfide, an inorganic ligand, demonstrated that the nanoparticles are amenable to surface modifications, key element in solution processing. Further annealing ofmore » as-synthesized nanocrystals under a sulfur/argon atmosphere at 600 °C, rendered highly crystalline Cu 3VS 4 powders exhibiting an impurity that could be potentially mitigated by annealing temperature optimization. Furthermore, Cu 3VS 4, formed solely from Earth-abundant elements, could provide an inexpensive, reliable approach to fabricating solution processed thin film photovoltaic absorbers.« less

Microwave-assisted synthesis and electrochemical evaluation of VO 2 (B) nanostructures

DOE PAGES

Ashton, Thomas E.; Borras, David Hevia; Iadecola, Antonella; ...

2015-12-01

Understanding how intercalation materials change during electrochemical operation is paramount to optimising their behaviour and function and in situ characterisation methods allow us to observe these changes without sample destruction. Here, we first report the improved intercalation properties of bronze phase vanadium dioxide VO2 (B) prepared by a microwave assisted route which exhibits a larger electrochemical capacity (232 mAh g -1) compared to VO 2 (B) prepared by a solvothermal route (197 mAh g -1). These electrochemical differences have also been followed using in situ X-ray absorption spectroscopy allowing us to follow oxidation state changes as they occur during batterymore » operation.« less

Material For Self-Q-Switching Mirrors For Solid State Laser (MSMSSL)

NASA Astrophysics Data System (ADS)

Wolf, L.; Walocha, J.; Drobnik, A.

1983-09-01

Vanadium dioxide (V02) film exhibits semiconductor-to-metal transition at temperature, Tt near 340 K. The transition is accompanied by changes in optical transmission and relection. In this paper the reflected light spectra were experimentally determined at the two temperatures below and above Tt (300 and 360 K) using film thickness as the parameter. Then we calculated the ratio, Kλ , of reflection coefficient, Rm, in metallic phase to reflection coefficient, Rsc, in semiconductor phase. The film for which the maximum Kλ was observed at λ =1.06μm applied as a mirror in Nd:glass laser. The laser generated giant pulse with duration time at about 50 ns.

Review on Variable Emissivity Materials and Devices Based on Smart Chromism

NASA Astrophysics Data System (ADS)

Lang, FengPei; Wang, Hao; Zhang, ShengJun; Liu, JingBing; Yan, Hui

2018-01-01

Variable emissivity material (VEM) can dynamically vary its emissivity and infrared radiation under certain conditions, which may find potential applications in infrared stealth/camouflage, solar thermal collector, spacecraft thermal control, and smart energy-saving windows. In this paper, the variable emissivity materials and devices based on electrochromism and thermochromism are introduced. The basic principle and present status of the research in these fields are overviewed. Four kinds of representative VEMs are extensively summarized, which are tungsten trioxides (WO3), conducting polymers (CPs), perovskite oxides (A_{1-{x}}B_{{x}}MO3), and vanadium dioxide (VO2). Finally, specific issues confronted with electrochromic and thermochromic materials and devices are prospected.

Broadband extreme ultraviolet probing of transient gratings in vanadium dioxide

DOE PAGES

Sistrunk, Emily; Grilj, Jakob; Jeong, Jaewoo; ...

2015-02-11

Nonlinear spectroscopy in the extreme ultraviolet (EUV) and soft x-ray spectral range offers the opportunity for element selective probing of ultrafast dynamics using core-valence transitions (Mukamel et al., Acc. Chem. Res. 42, 553 (2009)). The study demonstrate a step on this path showing core-valence sensitivity in transient grating spectroscopy with EUV probing. We study the optically induced insulator-to-metal transition (IMT) of a VO 2 film with EUV diffraction from the optically excited sample. The VO 2 exhibits a change in the 3p-3d resonance of V accompanied by an acoustic response. Due to the broadband probing we are able to separatemore » the two features.« less

Electronic and thermally tunable infrared metamaterial absorbers

NASA Astrophysics Data System (ADS)

Shrekenhamer, David; Miragliotta, Joseph A.; Brinkley, Matthew; Fan, Kebin; Peng, Fenglin; Montoya, John A.; Gauza, Sebastian; Wu, Shin-Tson; Padilla, Willie J.

2016-09-01

In this paper, we report a computational and experimental study using tunable infrared (IR) metamaterial absorbers (MMAs) to demonstrate frequency tunable (7%) and amplitude modulation (61%) designs. The dynamic tuning of each structure was achieved through the addition of an active material—liquid crystals (LC) or vanadium dioxide (VO2)-within the unit cell of the MMA architecture. In both systems, an applied stimulus (electric field or temperature) induced a dielectric change in the active material and subsequent variation in the absorption and reflection properties of the MMA in the mid- to long-wavelength region of the IR (MWIR and LWIR, respectively). These changes were observed to be reversible for both systems and dynamic in the LC-based structure.

Local coexistence of VO 2 phases revealed by deep data analysis

DOE PAGES

Strelcov, Evgheni; Ievlev, Anton; Tselev, Alexander; ...

2016-07-07

We report a synergistic approach of micro-Raman spectroscopic mapping and deep data analysis to study the distribution of crystallographic phases and ferroelastic domains in a defected Al-doped VO 2 microcrystal. Bayesian linear unmixing revealed an uneven distribution of the T phase, which is stabilized by the surface defects and uneven local doping that went undetectable by other classical analysis techniques such as PCA and SIMPLISMA. This work demonstrates the impact of information recovery via statistical analysis and full mapping in spectroscopic studies of vanadium dioxide systems, which is commonly substituted by averaging or single point-probing approaches, both of which suffermore » from information misinterpretation due to low resolving power.« less

Gate-tunable gigantic lattice deformation in VO{sub 2}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okuyama, D., E-mail: okuyama@riken.jp, E-mail: nakano@imr.tohoku.ac.jp, E-mail: iwasa@ap.t.u-tokyo.ac.jp; Hatano, T.; Nakano, M., E-mail: okuyama@riken.jp, E-mail: nakano@imr.tohoku.ac.jp, E-mail: iwasa@ap.t.u-tokyo.ac.jp

2014-01-13

We examined the impact of electric field on crystal lattice of vanadium dioxide (VO{sub 2}) in a field-effect transistor geometry by in-situ synchrotron x-ray diffraction measurements. Whereas the c-axis lattice parameter of VO{sub 2} decreases through the thermally induced insulator-to-metal phase transition, the gate-induced metallization was found to result in a significant increase of the c-axis length by almost 1% from that of the thermally stabilized insulating state. We also found that this gate-induced gigantic lattice deformation occurs even at the thermally stabilized metallic state, enabling dynamic control of c-axis lattice parameter by more than 1% at room temperature.

Evidence for impact ionization in vanadium dioxide

DOE PAGES

Holleman, Joshua; Bishop, Michael M.; Garcia, Carlos; ...

2016-10-17

Pump-probe optical spectroscopy was used to investigate charge carrier multiplication via impact ionization in the M 1 insulating phase of VO 2. By comparing the transient reflectivities of the film when pumped at less than and then more than twice the band-gap energy, we observed an enhancement of the ultrafast response with the higher energy pump color while the film was still transiently in the insulating phase. We additionally identified multiple timescales within the charge dynamics and analyzed how these changed when the pump and probe wavelengths were varied. This experiment provided evidence that impact ionization acts efficiently as amore » carrier multiplication process in this prototypical strongly-correlated insulator.« less

Development of a prototype regenerable carbon dioxide absorber

NASA Technical Reports Server (NTRS)

Onischak, M.

1976-01-01

Design information was obtained for a new, regenerable carbon dioxide control system for extravehicular activity life support systems. Solid potassium carbonate was supported in a thin porous sheet form and fabricated into carbon dioxide absorber units. Carbon dioxide and water in the life support system atmosphere react with the potassium carbonate and form potassium bicarbonate. The bicarbonate easily reverts to the carbonate by heating to 150 deg C. The methods of effectively packing the sorbent material into EVA-sized units and the effects of inlet concentrations, flowrate, and temperature upon performance were investigated. The cycle life of the sorbent upon the repeated thermal regenerations was demonstrated through 90 cycles.

Effect of growth time on the structure, morphology and optical properties of hydrothermally synthesized TiO2 nanorod thin films

NASA Astrophysics Data System (ADS)

Mohapatra, A. K.; Nayak, J.

2018-05-01

Titanium dioxide (TiO2) nanorod thin films were deposited on fluorine doped tin oxide coated glass substrates by a single step rapid hydrothermal process. The concentration of the precursor, the temperature of the reaction mixture were optimized in order to enhance the rate of deposition. Unlike the previously reported hydrothermal treatment for 24 - 48 h, the deposition of well aligned titanium dioxide nanorods was achieved in a short time such as 3 - 8 h. The crystal structure of the films were investigated by X-rays diffraction. The morphology of the nanorod films were studied with scanning electron microscopy. The optical properties were studied by photoluminescence spectroscopy.

Structure and optical properties of TiO2 thin films deposited by ALD method

NASA Astrophysics Data System (ADS)

Szindler, Marek; Szindler, Magdalena M.; Boryło, Paulina; Jung, Tymoteusz

2017-12-01

This paper presents the results of study on titanium dioxide thin films prepared by atomic layer deposition method on a silicon substrate. The changes of surface morphology have been observed in topographic images performed with the atomic force microscope (AFM) and scanning electron microscope (SEM). Obtained roughness parameters have been calculated with XEI Park Systems software. Qualitative studies of chemical composition were also performed using the energy dispersive spectrometer (EDS). The structure of titanium dioxide was investigated by X-ray crystallography. A variety of crystalline TiO2 was also confirmed by using the Raman spectrometer. The optical reflection spectra have been measured with UV-Vis spectrophotometry.

Comparative study on deposition of fluorine-doped tin dioxide thin films by conventional and ultrasonic spray pyrolysis methods for dye-sensitized solar modules

NASA Astrophysics Data System (ADS)

Icli, Kerem Cagatay; Kocaoglu, Bahadir Can; Ozenbas, Macit

2018-01-01

Fluorine-doped tin dioxide (FTO) thin films were produced via conventional spray pyrolysis and ultrasonic spray pyrolysis (USP) methods using alcohol-based solutions. The prepared films were compared in terms of crystal structure, morphology, surface roughness, visible light transmittance, and electronic properties. Upon investigation of the grain structures and morphologies, the films prepared using ultrasonic spray method provided relatively larger grains and due to this condition, carrier mobilities of these films exhibited slightly higher values. Dye-sensitized solar cells and 10×10 cm modules were prepared using commercially available and USP-deposited FTO/glass substrates, and solar performances were compared. It is observed that there exists no remarkable efficiency difference for both cells and modules, where module efficiency of the USP-deposited FTO glass substrates is 3.06% compared to commercial substrate giving 2.85% under identical conditions. We demonstrated that USP deposition is a low cost and versatile method of depositing commercial quality FTO thin films on large substrates employed in large area dye-sensitized solar modules or other thin film technologies.

Multi-physics transient simulation of monolithic niobium dioxide-tantalum dioxide memristor-selector structures

NASA Astrophysics Data System (ADS)

Sevic, John F.; Kobayashi, Nobuhiko P.

2017-10-01

Self-assembled niobium dioxide (NbO2) thin-film selectors self-aligned to tantalum dioxide (TaO2) memristive memory cells are studied by a multi-physics transient solution of the heat equation coupled to the nonlinear current continuity equation. While a compact model can resolve the quasi-static bulk negative differential resistance (NDR), a self-consistent coupled transport formulation provides a non-equilibrium picture of NbO2-TaO2 selector-memristor operation ab initio. By employing the drift-diffusion transport approximation, a finite element method is used to study the dynamic electrothermal behavior of our experimentally obtained selector-memristor devices, showing that existing conditions are suitable for electroformation of NbO2 selector thin-films. Both transient and steady-state simulations support our theory, suggesting that the phase change due to insulator-metal transition is responsible for NbO2 selector NDR in our as-fabricated selector-memristor devices. Simulation results further suggest that TiN nano-via may play a central role in electroforming, as its dimensions and material properties establish the mutual electrothermal interaction between TiN nano-via and the selector-memristor.

Memory Deficit Recovery after Chronic Vanadium Exposure in Mice

PubMed Central

Folarin, Oluwabusayo; Olopade, Funmilayo; Onwuka, Silas; Olopade, James

2016-01-01

Vanadium is a transitional metal with an ability to generate reactive oxygen species in the biological system. This work was designed to assess memory deficits in mice chronically exposed to vanadium. A total of 132 male BALB/c mice (4 weeks old) were used for the experiment and were divided into three major groups of vanadium treated, matched controls, and animals exposed to vanadium for three months and thereafter vanadium was withdrawn. Animals were tested using Morris water maze and forelimb grip test at 3, 6, 9, and 12 months of age. The results showed that animals across the groups showed no difference in learning but had significant loss in memory abilities after 3 months of vanadium exposure and this trend continued in all vanadium-exposed groups relative to the controls. Animals exposed to vanadium for three months recovered significantly only 9 months after vanadium withdrawal. There was no significant difference in latency to fall in the forelimb grip test between vanadium-exposed groups and the controls in all age groups. In conclusion, we have shown that chronic administration of vanadium in mice leads to memory deficit which is reversible but only after a long period of vanadium withdrawal. PMID:26962395

Memory Deficit Recovery after Chronic Vanadium Exposure in Mice.

PubMed

Folarin, Oluwabusayo; Olopade, Funmilayo; Onwuka, Silas; Olopade, James

2016-01-01

Vanadium is a transitional metal with an ability to generate reactive oxygen species in the biological system. This work was designed to assess memory deficits in mice chronically exposed to vanadium. A total of 132 male BALB/c mice (4 weeks old) were used for the experiment and were divided into three major groups of vanadium treated, matched controls, and animals exposed to vanadium for three months and thereafter vanadium was withdrawn. Animals were tested using Morris water maze and forelimb grip test at 3, 6, 9, and 12 months of age. The results showed that animals across the groups showed no difference in learning but had significant loss in memory abilities after 3 months of vanadium exposure and this trend continued in all vanadium-exposed groups relative to the controls. Animals exposed to vanadium for three months recovered significantly only 9 months after vanadium withdrawal. There was no significant difference in latency to fall in the forelimb grip test between vanadium-exposed groups and the controls in all age groups. In conclusion, we have shown that chronic administration of vanadium in mice leads to memory deficit which is reversible but only after a long period of vanadium withdrawal.

Simulation of the optical coating deposition

NASA Astrophysics Data System (ADS)

Grigoriev, Fedor; Sulimov, Vladimir; Tikhonravov, Alexander

2018-04-01

A brief review of the mathematical methods of thin-film growth simulation and results of their applications is presented. Both full-atomistic and multi-scale approaches that were used in the studies of thin-film deposition are considered. The results of the structural parameter simulation including density profiles, roughness, porosity, point defect concentration, and others are discussed. The application of the quantum level methods to the simulation of the thin-film electronic and optical properties is considered. Special attention is paid to the simulation of the silicon dioxide thin films.

Hydrothermal route to VO2 (B) nanorods: controlled synthesis and characterization

NASA Astrophysics Data System (ADS)

Song, Shaokun; Huang, Qiwei; Zhu, Wanting

2017-10-01

One-dimensional vanadium dioxides have attracted intensive attention owing to their distinctive structure and novel applications in catalysis, high energy lithium-ion batteries, chemical sensors/actuators and electrochemical devices etc. In this paper, large-scale VO2 (B) nanorods have been successfully synthesized via a versatile and environment friendly hydrothermal strategy using V2O5 as vanadium source and carbohydrates/alcohols as reductant. The obtained samples are characterized by XRD, FT-IR, TEM, and XPS techniques to investigate the effects of chemical parameters such as reductants, temperature, and time of synthesis on the structure and morphology of products. Results show that pure B phase VO2 with homogeneous nanorod-like morphology can be prepared easily at 180 °C for 3 days with glycerol as reluctant. Typically, the nanorod-like products are 0.5-1 μm long and 50 nm width. Furthermore, it is also confirmed that the products are consisted of VO2, corresponding to the B phase. More importantly, this novel approach is efficient, free of any harmful solvents and surfactants. Therefore, this efficient, green, and cost-saving route will have great potential in the large-scale fabrication of 1D VO2 (B) nanorods from the economic and environmental point of view.

The electro-optic mechanism and infrared switching dynamic of the hybrid multilayer VO2/Al:ZnO heterojunctions.

PubMed

Zhang, Peng; Zhang, Wu; Wang, Junyong; Jiang, Kai; Zhang, Jinzhong; Li, Wenwu; Wu, Jiada; Hu, Zhigao; Chu, Junhao

2017-06-30

Active and widely controllable phase transition optical materials have got rapid applications in energy-efficient electronic devices, field of meta-devices and so on. Here, we report the optical properties of the vanadium dioxide (VO 2 )/aluminum-doped zinc oxide (Al:ZnO) hybrid n-n type heterojunctions and the corresponding electro-optic performances of the devices. Various structures are fabricated to compare the discrepancy of the optical and electrical characteristics. It was found that the reflectance spectra presents the wheel phenomenon rather than increases monotonically with temperature at near-infrared region range. The strong interference effects was found in the hybrid multilayer heterojunction. In addition, the phase transition temperature decreases with increasing the number of the Al:ZnO layer, which can be ascribed to the electron injection to the VO 2 film from the Al:ZnO interface. Affected by the double layer Al:ZnO, the abnormal Raman vibration mode was presented in the insulator region. By adding the external voltage on the Al 2 O 3 /Al:ZnO/VO 2 /Al:ZnO, Al 2 O 3 /Al:ZnO/VO 2 and Al 2 O 3 /VO 2 /Al:ZnO thin-film devices, the infrared optical spectra of the devices can be real-time manipulated by an external voltage. The main effect of joule heating and assistant effect of electric field are illustrated in this work. It is believed that the results will add a more thorough understanding in the application of the VO 2 /transparent conductive film device.

Controle des proprietes des couches optiques par bombardement ionique

NASA Astrophysics Data System (ADS)

Marushka, Viktor

The manufacture of optical coatings presents many challenges such as the control over the film properties and microstructure, the optimization for the production of thin films with high quality, and the research on new materials. Ion-assisted evaporation is one of the principal methods used for the fabrication of optical coatings as a response to these challenges. It allows for good process control, and it permits us to predict and put on an industrial scale the deposition process by considering the direct and quantitative relation between the energies of the incident ions, and the performance of the deposited materials. This work is devoted to the study of the effect of ion bombardment on the microstructure and properties of optical thin films of silicon dioxide and titanium dioxide, which are widely used in optical interference filters, in particular with the use of a Hall effect ion source. These studies include a systematic evaluation of the mechanical and optical properties and of the density of thin films using different complementary techniques - the Quartz Crystal Microbalance, Rutherford Backscattering Spectroscopy, and Infrared Variable Angle Spectroscopic Ellipsometry among others. Different approaches (Spectroscopic Ellipsometry and Infrared Ellipsometry, the measurement of mechanical stress) have been used to evaluate the amount of water in thin films. The results on the density of films and the presence of water in the films obtained by the different methods are in good agreement. It was found that the critical energy values giving rise to dense and stable optical coatings of silicon dioxide and titanium dioxide are 25 eV/atom and 45 eV/atom, respectively. Moreover, this work presents the methodology developed to determine the ion current density distribution on the surface of a substrate holder of a dome shape for different positions relative to the ion source. The proposed analysis can be used as an effective tool for the construction of an industrial reactor and for its appropriate optimization.

Optoelectronic and all-optical multiple memory states in vanadium dioxide

NASA Astrophysics Data System (ADS)

Coy, Horacio; Cabrera, Rafmag; Sepúlveda, Nelson; Fernández, Félix E.

2010-12-01

Vanadium dioxide exhibits a well-known insulator-to-metal transition during which several of its physical properties change significantly. A hysteresis loop develops for each of them as the material is heated and then cooled through the transition. In this work VO2/SiO2 samples were maintained—by heat sinking—at a selected temperature within the heating branch of the hysteresis loops for resistance and near-infrared transmittance, while brief thermal excursions of the VO2 film were caused by either voltage pulses applied to the film or laser light pulses irradiating the film. These pulses had durations from milliseconds to a few seconds and the resulting drops in resistance or transmittance were easily and repeatably measurable without appreciably affecting their new values. A sequence of equal-duration pulses (for either equal-voltage or equal-irradiation pulses) caused the resistance and infrared transmittance to continue to drop, each time by a smaller amount, and larger energy pulses were required in order to cause drops comparable with the initial one. The ability of the film to change the values of the measurands in this manner with additional pulses was maintained up to a limit defined by the outer hysteresis curve for the measurand in question. The results presented show that a plurality of memory "states" in VO2 can be established or "written" either by voltage pulses or by light pulses applied to the material, and queried or "read" by resistance or transmittance readings, or both. These states were found to remain stable for at least several hours, as long as temperature was kept constant, and are expected to persist indefinitely under this condition. In the all-optical case, if the same light beam is used for writing and reading the memory state, the device is an optical analog of a memristor.

Mineral and energy resources of the Roswell Resource Area, East-Central New Mexico

USGS Publications Warehouse

Bartsch-Winkler, Susan B.; Donatich, Alessandro J.

1995-01-01

The sedimentary formations of the Roswell Resource Area have significant mineral and energy resources. Some of the pre-Pennsylvanian sequences in the Northwestern Shelf of the Permian Basin are oil and gas reservoirs, and Pennsylvanian rocks in Tucumcari Basin are reservoirs of oil and gas as well as source rocks for oil and gas in Triassic rocks. Pre-Permian rocks also contain minor deposits of uranium and vanadium, limestone, and gases. Hydrocarbon reservoirs in Permian rocks include associated gases such as carbon dioxide, helium, and nitrogen. Permian rocks are mineralized adjacent to the Lincoln County porphyry belt, and include deposits of copper, uranium, manganese, iron, polymetallic veins, and Mississippi-Valley-type lead-zinc. Industrial minerals in Permian rocks include fluorite, barite, potash, halite, polyhalite, gypsum, anhydrite, sulfur, limestone, dolomite, brine deposits (iodine and bromine), aggregate (sand), and dimension stone. Doubly terminated quartz crystals, called 'Pecos diamonds' and collected as mineral specimens, occur in Permian rocks along the Pecos River. Mesozoic sedimentary rocks are hosts for copper, uranium, and small quantities of gold-silver-tellurium veins, as well as significant deposits of oil and gas, carbon dioxide, asphalt, coal, and dimension stone. Mesozoic rocks contain limited amounts of limestone, gypsum, petrified wood, and clay. Tertiary rocks host ore deposits commonly associated with intrusive rocks, including platinum-group elements, iron skarns, manganese, uranium and vanadium, molybdenum, polymetallic vein deposits, gold-silver-tellurium veins, and thorium-rare-earth veins. Museum-quality quartz crystals are associated with Tertiary intrusive rocks. Industrial minerals in Tertiary rocks include fluorite, vein- and bedded-barite, caliche, limestone, and aggregate. Tertiary and Quaternary sediments host important placer deposits of gold and titanium, and occurrences of silver and uranium. Important industrial commodities include caliche, limestone and dolomite, and aggregate. Quaternary basalt contains sub-ore-grade uranium, scoria, and clay deposits.

The controlled deposition of metal oxides onto carbon nanotubes by atomic layer deposition: examples and a case study on the application of V2O4 coated nanotubes in gas sensing.

PubMed

Willinger, Marc-Georg; Neri, Giovanni; Bonavita, Anna; Micali, Giuseppe; Rauwel, Erwan; Herntrich, Tobias; Pinna, Nicola

2009-05-21

A new atomic layer deposition (ALD) process was applied for the uniform coating of carbon nanotubes with a number of transition-metal oxide thin films (vanadium, titanium, and hafnium oxide). The presented approach is adapted from non-aqueous sol-gel chemistry and utilizes metal alkoxides and carboxylic acids as precursors. It allows the coating of the inner and outer surface of the tubes with a highly conformal film of controllable thickness and hence, the production of high surface area hybrid materials. The morphology and the chemical composition as well as the high purity of the films are evidenced through a combination of electron microscopic and electron-energy-loss spectrometric techniques. Furthermore, in order to highlight a possible application of the obtained hybrids, the electrical and sensing properties of resistive gas sensors based on hybrid vanadium oxide-coated carbon nanotubes (V2O4-CNTs) are reported and the effect of thermal treatment on the gas sensing properties is studied.

Ferromagnetism of vanadium doped Bi2Se3 thin films

NASA Astrophysics Data System (ADS)

Zhang, Liguo; Zhao, Dapeng; Zang, Yunyi; Yuan, Yonghao; Jiang, Gaoyuan; He, Ke; Ma, Xucun; Xue, Qikun

Bi2Se3 is a representative three-dimensional topological insulator with a bulk band gap of about 300 meV. The quantum anomalous Hall effect (QAHE) has never been realized in Bi2Se3-based magnetic topological insulators due to the difficulties in introducing ferromagnetism in them. With molecular beam epitaxy (MBE), we have grown vanadium-doped Bi2Se3 films with decent crystalline quality and homogeneous distribution of V impurities. The films are all electron-doped and show square-shaped hysteresis loops of Hall resistance with coercivity up to 0.2T at 2K, indicating ferromagnetism with perpendicular magnetic anisotropy in them. Both the ferromagnetism and anomalous Hall resistance are enhanced by decreasing electron density. We have systematically studied the magneto-transport properties of the films with varying V concentration, film thickness, and carrier density and discussed the mechanism of ferromagnetic coupling. The study demonstrates that V-doped Bi2Se3 films are candidate QAHE materials if their electron density can be further reduced. This work was supported by National Natural Science Foundation of China.

Atomic Layer Deposition of Bismuth Vanadates for Solar Energy Materials.

PubMed

Stefik, Morgan

2016-07-07

The fabrication of porous nanocomposites is key to the advancement of energy conversion and storage devices that interface with electrolytes. Bismuth vanadate, BiVO4 , is a promising oxide for solar water splitting where the controlled fabrication of BiVO4 layers within porous, conducting scaffolds has remained a challenge. Here, the atomic layer deposition of bismuth vanadates is reported from BiPh3 , vanadium(V) oxytriisopropoxide, and water. The resulting films have tunable stoichiometry and may be crystallized to form the photoactive scheelite structure of BiVO4 . A selective etching process was used with vanadium-rich depositions to enable the synthesis of phase-pure BiVO4 after spinodal decomposition. BiVO4 thin films were measured for photoelectrochemical performance under AM 1.5 illumination. The average photocurrents were 1.17 mA cm(-2) at 1.23 V versus the reversible hydrogen electrode using a hole-scavenging sulfite electrolyte. The capability to deposit conformal bismuth vanadates will enable a new generation of nanocomposite architectures for solar water splitting. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Facile synthesis of layered V2O5/ZnV2O6 heterostructures with enhanced sensing performance

NASA Astrophysics Data System (ADS)

Xiao, Bingxin; Huang, Hao; Yu, Xiantong; Song, Jun; Qu, Junle

2018-07-01

A low-cost and environment-friendly hydrothermal approach was used for the synthesis of layered V2O5/ZnV2O6 hybrid nanobelts. Characterization results indicate that the V2O5/ZnV2O6 nanobelts are composed of several thin layers. Additionally, it is illustrated that the chemical formation process of V2O5/ZnV2O6 occurred in the solution. The synthesized V2O5/ZnV2O6 heterostructures were subjected to detailed ethanol sensing tests. Results demonstrate that V2O5/ZnV2O6 based sensor shows about 4.3 of response to 100 ppm of ethanol gases, reveals relatively high sensitivity at relatively low optimal operating temperature of 240 °C, as well as relatively good selectivity and stability. The performance of the sensor is better than most of reported vanadium based sensing devices. Thus this work offers a new insight into the rational regulation of vanadium based sensing devices.

The effect of laser energy on V2O5 thin film growth prepared by laser assisted molecular beam deposition

NASA Astrophysics Data System (ADS)

Abdel Samad, B.; Ashrit, P. V.

2014-09-01

Vanadium pentoxide V2O5 thin films were grown on glass substrates by the LAMBD deposition system with different laser energies. The structure, composition and optical properties of the films have been investigated with atomic force microscopy, x-ray photoemission spectroscopy, ellipsometry and the transmittance analysis. Upon the increase of laser energy, the results showed that the changes in the optical constants are consistent with the thickness changes of the film. The refractive index increases and the absorption coefficient increases when the laser energy increases. The AFM analysis showed a change of the roughness and structure of the deposited films at different laser energies. The prepared films deposited by LAMBD showed interesting properties with correct V2O5 phase without need of annealing after deposition.

V2O5 thin film deposition for application in organic solar cells

NASA Astrophysics Data System (ADS)

Arbab, Elhadi A. A.; Mola, Genene Tessema

2016-04-01

Vanadium pentoxide V2O5 films were fabricated by way of electrochemical deposition technique for application as hole transport buffer layer in organic solar cell. A thin and uniform V2O5 films were successfully deposited on indium tin oxide-coated glass substrate. The characterization of surface morphology and optical properties of the deposition suggest that the films are suitable for photovoltaic application. Organic solar cell fabricated using V2O5 as hole transport buffer layer showed better devices performance and environmental stability than those devices fabricated with PEDOT:PSS. In an ambient device preparation condition, the power conversion efficiency increases by nearly 80 % compared with PEDOT:PSS-based devices. The devices lifetime using V2O5 buffer layer has improved by a factor of 10 over those devices with PEDOT:PSS.

Optical and sensing properties of sol-gel derived vanadium pentoxide thin films with porous and dense structures

NASA Astrophysics Data System (ADS)

Babeva, T.; Awala, H.; Grand, J.; Lazarova, K.; Vasileva, M.; Mintova, S.

2018-03-01

The sol-gel and spin-coating methods were used for deposition of thin transparent V2O5 films on optical glass substrates and silicon wafers. Different synthesis and deposition conditions, including synthesis temperatures and post-deposition annealing, were used aiming at obtaining transparent films with high refractive index and good optical quality. The surface morphology and structure of the films were studied by SEM and XRD. The optical properties (refractive index, extinction coefficient and optical band gap) and thickness of the V2O5 films were determined from their transmittance and reflectance spectra. The potential application of the films as building blocks of optical sensors was demonstrated by preparation of multilayered structures comprising both V2O5 and BEA-type zeolite films and testing their response towards acetone vapors.

Assessment of total and organic vanadium levels and their bioaccumulation in edible sea cucumbers: tissues distribution, inter-species-specific, locational differences and seasonal variations.

PubMed

Liu, Yanjun; Zhou, Qingxin; Xu, Jie; Xue, Yong; Liu, Xiaofang; Wang, Jingfeng; Xue, Changhu

2016-02-01

The objective of this study is to investigate the levels, inter-species-specific, locational differences and seasonal variations of vanadium in sea cucumbers and to validate further several potential factors controlling the distribution of metals in sea cucumbers. Vanadium levels were evaluated in samples of edible sea cucumbers and were demonstrated exhibit differences in different seasons, species and sampling sites. High vanadium concentrations were measured in the sea cucumbers, and all of the vanadium detected was in an organic form. Mean vanadium concentrations were considerably higher in the blood (sea cucumber) than in the other studied tissues. The highest concentration of vanadium (2.56 μg g(-1)), as well as a higher degree of organic vanadium (85.5 %), was observed in the Holothuria scabra samples compared with all other samples. Vanadium levels in Apostichopus japonicus from Bohai Bay and Yellow Sea have marked seasonal variations. Average values of 1.09 μg g(-1) of total vanadium and 0.79 μg g(-1) of organic vanadium were obtained in various species of sea cucumbers. Significant positive correlations between vanadium in the seawater and V org in the sea cucumber (r = 81.67 %, p = 0.00), as well as between vanadium in the sediment and V org in the sea cucumber (r = 77.98 %, p = 0.00), were observed. Vanadium concentrations depend on the seasons (salinity, temperature), species, sampling sites and seawater environment (seawater, sediment). Given the adverse toxicological effects of inorganic vanadium and positive roles in controlling the development of diabetes in humans, a regular monitoring programme of vanadium content in edible sea cucumbers can be recommended.

Leaching characteristics of vanadium in mine tailings and soils near a vanadium titanomagnetite mining site.

PubMed

Yang, Jinyan; Tang, Ya; Yang, Kai; Rouff, Ashaki A; Elzinga, Evert J; Huang, Jen-How

2014-01-15

A series of column leaching experiments were performed to understand the leaching behaviour and the potential environmental risk of vanadium in a Panzhihua soil and vanadium titanomagnetite mine tailings. Results from sequential extraction experiments indicated that the mobility of vanadium in both the soil and the mine tailings was low, with <1% of the total vanadium readily mobilised. Column experiments revealed that only <0.1% of vanadium in the soil and mine tailing was leachable. The vanadium concentrations in the soil leachates did not vary considerably, but decreased with the leachate volume in the mine tailing leachates. This suggests that there was a smaller pool of leachable vanadium in the mine tailings compared to that in the soil. Drought and rewetting increased the vanadium concentrations in the soil and mine tailing leachates from 20μgL(-1) to 50-90μgL(-1), indicating the potential for high vanadium release following periods of drought. Experiments with soil columns overlain with 4, 8 and 20% volume mine tailings/volume soil exhibited very similar vanadium leaching behaviour. These results suggest that the transport of vanadium to the subsurface is controlled primarily by the leaching processes occurring in soils. Copyright © 2013 Elsevier B.V. All rights reserved.

[Oxidative Stress Level of Vanadium-exposed Workers].

PubMed

Wei, Teng-da; Li, Shun-pin; Liu, Yun-xing; Tan, Chun-ping; Li, Juan; Zhang, Zu-hui; Lan, Ya-jia; Zhang, Qin

2015-11-01

To determine the oxidative stress level in peripheral blood of vanadium-exposed workers, as an indication of population health effect of vanadium on human neurobehavioral system. 86 vanadium-exposed workers and 65 non-exposed workers were recruited by cluster sampling. A questionnaire was administered to collect demographic and occupational exposure information. Serum activity of superoxide dismutase (SOD), inducible nitric oxide synthase (iNOS) and malonaldehyde (MDA) contents were detected by kit assay. The differences in oxidative stress level between vanadium-exposed and non-exposed workers were compared. Vanadium-exposed workers had higher levels of MDA contents than the controls. The total superoxide dismutase(T-SOD) activity in vanadium-exposed workers was significantly lower than that in the controls, which was associated with lowered levels of manganese superoxide dismutase (Mn-SOD) activity. No changes in serum levels of cupro-zinc superoxide dismutase (CuZn-SOD) was found in vanadium-exposed workers. No difference in iNOS activity was found between vanadium-exposed workers and controls. Vanadium exposure increases free radical production in serum and reduces antioxidant capacity. But the relationship between vanadium exposure and iNOS damage remains uncertain.

Characterization of zinc oxide thin film for pH detector

NASA Astrophysics Data System (ADS)

Hashim, Uda; Fathil, M. F. M.; Arshad, M. K. Md; Gopinath, Subash C. B.; Uda, M. N. A.

2017-03-01

This paper presents the fabrication process of the zinc oxide thin films for using to act as pH detection by using different PH solution. Sol-gel solution technique is used for preparing zinc oxide seed solution, followed by metal oxide deposition process by using spin coater on the silicon dioxide. Silicon dioxide layer is grown on the silicon wafer, then, ZnO seed solution is deposited on the silicon layer, baked, and annealing process carried on to undergo the characterization of its surface morphology, structural and crystalline phase. Electrical characterization is showed by using PH 4, 7, and 10 is dropped on the surface of the die, in addition, APTES solution is used as linker and also as a references of the electrical characterization.

The presence of vanadium in groundwater of southeastern extreme the pampean region Argentina Relationship with other chemical elements.

PubMed

Fiorentino, Carmen E; Paoloni, Juan D; Sequeira, Mario E; Arosteguy, Pedro

2007-08-15

Changes in the quality of groundwater resources are related to the presence and concentration of contaminants, especially trace elements such as arsenic, boron, fluoride and vanadium. Vanadium is a rare element naturally abundant, generally found in combination with other elements. Vanadium pentoxide is known to have aneugenic effects. Thus, a study was carried out to assess the presence of vanadium in the groundwater of the southeastern pampean region of Argentina, which constitutes the main water supply for the local population. Statistical and correlational analyses were applied to identify possible interrelationships between vanadium and another chemical elements. Vanadium was found in all groundwater samples. The minimum and maximum vanadium concentrations found were 0.05 mg/l and 2.47 mg/l, respectively. Vanadium is significantly correlated with other trace elements such as arsenic, fluoride and boron. The interrelationship between vanadium and the presence of volcanic glass in sediments is not significant as expected.

Bioaccumulation of Vanadium by Vanadium-Resistant Bacteria Isolated from the Intestine of Ascidia sydneiensis samea.

PubMed

Romaidi; Ueki, Tatsuya

2016-06-01

Isolation of naturally occurring bacterial strains from metal-rich environments has gained popularity due to the growing need for bioremediation technologies. In this study, we found that the vanadium concentration in the intestine of the vanadium-rich ascidian Ascidia sydneiensis samea could reach 0.67 mM, and thus, we isolated vanadium-resistant bacteria from the intestinal contents and determined the ability of each bacterial strain to accumulate vanadium and other heavy metals. Nine strains of vanadium-resistant bacteria were successfully isolated, of which two strains, V-RA-4 and S-RA-6, accumulated vanadium at a higher rate than did the other strains. The maximum vanadium absorption by these bacteria was achieved at pH 3, and intracellular accumulation was the predominant mechanism. Each strain strongly accumulated copper and cobalt ions, but accumulation of nickel and molybdate ions was relatively low. These bacterial strains can be applied to protocols for bioremediation of vanadium and heavy metal toxicity.

Vanadium recycling in the United States in 2004

USGS Publications Warehouse

Goonan, Thomas G.

2011-01-01

As one of a series of reports that describe the recycling of metal commodities in the United States, this report discusses the flow of vanadium in the U.S. economy in 2004. This report includes a description of vanadium supply and demand in the United States and illustrates the extent of vanadium recycling and recycling trends. In 2004, apparent vanadium consumption, by end use, in the United States was 3,820 metric tons (t) in steelmaking and 232 t in manufacturing, of which 17 t was for the production of superalloys and 215 t was for the production of other alloys, cast iron, catalysts, and chemicals. Vanadium use in steel is almost entirely dissipative because recovery of vanadium from steel scrap is chemically impeded under the oxidizing conditions in steelmaking furnaces. The greatest amount of vanadium recycling is in the superalloy, other-alloy, and catalyst sectors of the vanadium market. Vanadium-bearing catalysts are associated with hydrocarbon recovery and refining in the oil industry. In 2004, 2,850 t of vanadium contained in alloy scrap and spent catalysts was recycled, which amounted to about 44 percent of U.S. domestic production. About 94 percent of vanadium use in the United States was dissipative (3,820 t in steel/4,050 t in steel+fabricated products).

Thinning and opening of carbon nanotubes by oxidation using carbon dioxide

NASA Astrophysics Data System (ADS)

Tsang, S. C.; Harris, P. J. F.; Green, M. L. H.

1993-04-01

THE discovery1 and bulk synthesis2 of carbon nanotubes has stimulated great interest. It has been suggested that these structures may have useful electronic3-5 and mechanical6 properties, and these might be modified by introducing foreign materials into the nanotubes. But the tubes are invariably capped at the ends. Ajayan and lijima7 have succeeded in drawing molten material (lead or one of its compounds) into the tubes by heating them in the presence of lead and oxygen; less than 1% of the tubes in the sample studied could be filled in this way. Here we report that heating in carbon dioxide gas can result in the partial or complete destruction of the tube caps and stripping of the outer layers to produce thinner tubes. In some cases, we have thinned the extremity of tubes to a single layer. The opened tubes can be regarded as nanoscale test-tubes for adsorption of other molecules, and this controlled method of thinning may allow studies of the properties of single tubes.

Effects of supercritical carbon dioxide on immobile bound polymer chains on solid substrates

NASA Astrophysics Data System (ADS)

Sen, Mani; Asada, Mitsunori; Jiang, Naisheng; Endoh, Maya K.; Akgun, Bulent; Satija, Sushil; Koga, Tadanori

2013-03-01

Adsorbed polymer layers formed on flat solid substrates have recently been the subject of extensive studies because it is postulated to control the dynamics of technologically relevant polymer thin films, for example, in lithography. Such adsorbed layers have been reported to hinder the mobility of polymer chains in thin films even at a large length scale. Consequently, this bound layer remains immobile regardless of processing techniques (i.e. thermal annealing, solvent dissolution, etc). Here, we investigate the use of supercritical carbon dioxide (scCO2) as a novel plasticizer for bound polystyrene layers formed on silicon substrates. In-situ swelling and interdiffusion experiments using neutron reflectivity were performed. As a result, we found the anomalous plasticization effects of scCO2 on the bound polymer layers near the critical point where the anomalous adsorption of CO2 molecules in polymer thin films has been reported previously. Acknowledgement: We acknowledge the financial support from NSF Grant No. CMMI-084626.

Release kinetics of vanadium from vanadium (III, IV and V) oxides: Effect of pH, temperature and oxide dose.

PubMed

Hu, Xingyun; Yue, Yuyan; Peng, Xianjia

2018-05-01

Batch experiments were performed to derive the rate laws for the proton-promoted dissolution of the main vanadium (III, IV and V) oxides at pH 3.1-10.0. The release rates of vanadium are closely related to the aqueous pH, and several obvious differences were observed in the release behavior of vanadium from the dissolution of V 2 O 5 and vanadium(III, IV) oxides. In the first 2hr, the release rates of vanadium from V 2 O 3 were r=1.14·([H + ]) 0.269 at pH 3.0-6.0 and r=0.016·([H + ]) -0.048 at pH 6.0-10.0; the release rates from VO 2 were r=0.362·([H + ]) 0.129 at pH 3.0-6.0 and r=0.017·([H + ]) -0.097 at pH 6.0-10.0; and the release rates from V 2 O 5 were r=0.131·([H + ]) -0.104 at pH 3.1-10.0. The release rates of vanadium from the three oxides increased with increasing temperature, and the effect of temperature was different at pH 3.8, pH 6.0 and pH 7.7. The activation energies of vanadium (III, IV and V) oxides (33.4-87.5kJ/mol) were determined at pH 3.8, pH6.0 and pH 7.7, showing that the release of vanadium from dissolution of vanadium oxides follows a surface-controlled reaction mechanism. The release rates of vanadium increased with increasing vanadium oxides dose, albeit not proportionally. This study, as part of a broader study of the release behavior of vanadium, can help to elucidate the pollution problem of vanadium and to clarify the fate of vanadium in the environment. Copyright © 2017. Published by Elsevier B.V.

High pressure spectroscopic studies of phase transition in VO2

NASA Astrophysics Data System (ADS)

Basu, Raktima; Mishra, K. K.; Ravindran, T. R.; Dhara, Sandip

2018-04-01

Vanadium dioxide (VO2) exhibits a reversible first-order metal to insulator transition (MIT) at a technologically important temperature of 340K. A structural phase transition (SPT) from monoclinic M1 to rutile tetragonal R is also reported via another two intermediate phases of monoclinic M2 and triclinic T. Metastable monoclinic M2 phase of VO2 was synthesized by Mg doping in the vapour transport process. Raman spectroscopic measurements were carried out at high pressure on V1-xMgxO2 microrods. Two reversible structural phase transitions from monoclinic M2 to triclinic T at 1.6 GPa and T to monoclinic M1 at 3.2 GPa are observed and are explained by structural relaxation of the strained phases.

VO2 /TiN Plasmonic Thermochromic Smart Coatings for Room-Temperature Applications.

PubMed

Hao, Qi; Li, Wan; Xu, Huiyan; Wang, Jiawei; Yin, Yin; Wang, Huaiyu; Ma, Libo; Ma, Fei; Jiang, Xuchuan; Schmidt, Oliver G; Chu, Paul K

2018-03-01

Vanadium dioxide/titanium nitride (VO 2 /TiN) smart coatings are prepared by hybridizing thermochromic VO 2 with plasmonic TiN nanoparticles. The VO 2 /TiN coatings can control infrared (IR) radiation dynamically in accordance with the ambient temperature and illumination intensity. It blocks IR light under strong illumination at 28 °C but is IR transparent under weak irradiation conditions or at a low temperature of 20 °C. The VO 2 /TiN coatings exhibit a good integral visible transmittance of up to 51% and excellent IR switching efficiency of 48% at 2000 nm. These unique advantages make VO 2 /TiN promising as smart energy-saving windows. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Correlation-driven insulator-metal transition in near-ideal vanadium dioxide films

DOE PAGES

Gray, A. X.; Jeong, J.; Aetukuri, N. P.; ...

2016-03-18

We use polarization- and temperature-dependent x-ray absorption spectroscopy, in combination with photoelectron microscopy, x-ray diffraction, and electronic transport measurements, to study the driving force behind the insulator-metal transition in VO 2. We show that both the collapse of the insulating gap and the concomitant change in crystal symmetry in homogeneously strained single-crystalline VO 2 films are preceded by the purely electronic softening of Coulomb correlations within V-V singlet dimers. Furthermore, this process starts 7 K (±0.3 K) below the transition temperature, as conventionally defined by electronic transport and x-ray diffraction measurements, and sets the energy scale for driving the near-room-temperaturemore » insulator-metal transition in this technologically promising material.« less

Description of the dynamic infrared background/target simulator (DIBS)

NASA Astrophysics Data System (ADS)

Lujan, Ignacio

1988-01-01

The purpose of the Dynamic Infrared Background/Target Simulator (DIBS) is to project dynamic infrared scenes to a test sensor; e.g., a missile seeker that is sensitive to infrared energy. The projected scene will include target(s) and background. This system was designed to present flicker-free infrared scenes in the 8 micron to 12 micron wavelength region. The major subassemblies of the DIBS are the laser write system (LWS), vanadium dioxide modulator assembly, scene data buffer (SDB), and the optical image translator (OIT). This paper describes the overall concept and design of the infrared scene projector followed by some details of the LWS and VO2 modulator. Also presented are brief descriptions of the SDB and OIT.

Development of Membrane Process for Carbon Dioxide Separation from Diving Atmosphere

DTIC Science & Technology

1990-05-01

backing, or support layer, as is shown in Figure 17b. The ultrathin film and backing of this composite membrane, which is sometimes called a " thin - film ...As a result, the properties and performance of a thin - film laminate can be better controlled, in principle, than those of a "skinned" membrane...method of preparing an asymmetric membrane is by coating a thin nonporous film directly on the surface of a suitable microporous t __ .. NEW DEVELOPMEN"TS

Methods for making lithium vanadium oxide electrode materials

DOEpatents

Schutts, Scott M.; Kinney, Robert J.

2000-01-01

A method of making vanadium oxide formulations is presented. In one method of preparing lithium vanadium oxide for use as an electrode material, the method involves: admixing a particulate form of a lithium compound and a particulate form of a vanadium compound; jet milling the particulate admixture of the lithium and vanadium compounds; and heating the jet milled particulate admixture at a temperature below the melting temperature of the admixture to form lithium vanadium oxide.

THE COLORIMETRIC DETERMINATION OF VANADIUM IN NIOBIUM-VANADIUM ALLOYS

DOE Office of Scientific and Technical Information (OSTI.GOV)

Articolo, O.J.

1959-06-26

A procedure is described for the analysis of vanadium in niobium-- vanadium alloys in the range >0.1% vanadium with an accuracy of better than 3%. The method was applied to the analysis of niobium alloys in which the nominal per cent vanadium varied between 0.3 to 4.6%. The sample is dissolved in a mixture of nitric and hydrofluoric acid and then evaporated to fumes with sulfuric acid. The niobium is hydrolyzed with sulfurous acid and separated from the vanadium by filtration. Hydrogen peroxide is added to the filtrate to form a reddish brown complex with the vanadium. The optical densitymore » of the resulting solution is obtained at 450 m mu on a model B Beckman spectrophotometer. (auth)« less

Improved ferroelectric polarization of V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films prepared by a chemical solution deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, D. P.; University of Science and Technology of China, Hefei 230026; Yang, J., E-mail: jyang@issp.ac.cn

We prepared V-doped Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films on Pt/Ti/SiO{sub 2}/Si (100) substrates by using a chemical solution deposition route and investigated the doping effect on the microstructure, dielectric, leakage, and ferroelectric properties of Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films. The Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film exhibits improved dielectric properties, leakage current, and ferroelectric properties. The incorporation of vanadium resulted in a substantially enhanced remnant polarization (2P{sub r}) over 30 μC/cm{sup 2} in Bi{sub 5.97}Fe{sub 2}Ti{sub 2.91}V{sub 0.09}O{sub 18} thin film compared with 10 μC/cm{sup 2} in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin film. It ismore » demonstrated that the improved properties may stem from the improvement of crystallinity of the films with the contribution of suppressed oxygen vacancies and decreased mobility of oxygen vacancies caused by the V-doping. The results will provide a guidance to optimize the ferroelectric properties in Bi{sub 6}Fe{sub 2}Ti{sub 3}O{sub 18} thin films by chemical solution deposition, which is important to further explore single-phase multiferroics in the n = 5 Aurivillius thin films.« less

Characterisation of well-adhered ZrO2 layers produced on structured reactors using the sonochemical sol-gel method

NASA Astrophysics Data System (ADS)

Jodłowski, Przemysław J.; Chlebda, Damian K.; Jędrzejczyk, Roman J.; Dziedzicka, Anna; Kuterasiński, Łukasz; Sitarz, Maciej

2018-01-01

The aim of this study was to obtain thin zirconium dioxide coatings on structured reactors using the sonochemical sol-gel method. The preparation method of metal oxide layers on metallic structures was based on the synergistic combination of three approaches: the application of ultrasonic irradiation during the synthesis of Zr sol-gel based on a precursor solution containing zirconium(IV) n-propoxide, the addition of stabilszing agents, and the deposition of ZrO2 on the metallic structures using the dip-coating method. As a result, dense, uniform zirconium dioxide films were obtained on the FeCrAlloy supports. The structured reactors were characterised by various physicochemical methods, such as BET, AFM, EDX, XRF, XRD, XPS and in situ Raman spectroscopy. The results of the structural analysis by Raman and XPS spectroscopy confirmed that the metallic surface was covered by a ZrO2 layer without any impurities. SEM/EDX mapping revealed that the deposited ZrO2 covered the metallic support uniformly. The mechanical and high temperature tests showed that the developed ultrasound assisted sol-gel method is an efficient way to obtain thin, well-adhered zirconium dioxide layers on the structured reactors. The prepared metallic supports covered with thin ZrO2 layers may be a good alternative to layered structured reactors in several dynamics flow processes, for example for gas exhaust abatement.

DNA damage induction in human cells exposed to vanadium oxides in vitro.

PubMed

Rodríguez-Mercado, Juan J; Mateos-Nava, Rodrigo A; Altamirano-Lozano, Mario A

2011-12-01

Vanadium and vanadium salts cause genotoxicity and elicit variable biological effects depending on several factors. In the present study, we analyzed and compared the DNA damage and repair processes induced by vanadium in three oxidation states. We used human blood leukocytes in vitro and in a single cell gel electrophoresis assay at two pH values. We observed that vanadium(III) trioxide and vanadium(V) pentoxide produced DNA single-strand breaks at all of the concentrations (1, 2, 4, or 8 μg/ml) and treatment times (2, 4, or 6 h) tested. Vanadium(IV) tetraoxide treatment significantly increased DNA damage at all concentrations for 4 or 6 h of treatment but not for 2 h of treatment. The DNA repair kinetics indicated that most of the cells exposed to vanadium III and V for 4 h recovered within the repair incubation time of 90 min; however, those exposed to vanadium(IV) repaired their DNA within 120 min. The data at pH 9 indicated that vanadium(IV) tetraoxide induced DNA double-strand breaks. Our results show that the genotoxic effect of vanadium can be produced by any of its three oxidation states. However, vanadium(IV) induces double-strand breaks, and it is known that these lesions are linked with forming structural chromosomal aberrations. Copyright © 2011 Elsevier Ltd. All rights reserved.

Effective role of deposition duration on the growth of V2O5 nanostructured thin films

NASA Astrophysics Data System (ADS)

Sharma, Rabindar Kumar; Saini, Sujit Kumar; Singh, Megha; Reddy, G. B.

2016-05-01

In this report, vanadium pentoxide nanostructured thin films (NSTs) with nanoplates (NPs) have synthesized on Ni coated glass substrate employing plasma assisted sublimation process (PASP), as a function of deposition/growth durations. The effect of deposition durations on the morphological, structural, vibrational, and compositional properties have been investigated one by one. The structural and vibrational studies endorsed that the grown NPs have only orthorhombic phase, no other sub oxide phases are recorded in the limit of resolution. The morphological results of all samples using SEM, revealed that the features, coverage density, and alignments of NPs are greatly controlled by deposition duration and the best sample is obtained for 25 min (S2). Further, the more insight information is accomplished by HRTEM/SAED on the best featured sample, which confirmed the single crystalline nature of NPs. The XPS result again confirmed the compositional purity and the nearly stoichiometric nature of NPs.

Comparison of the optical responses of O-poor and O-rich thermochromic VOX films during semiconductor-to-metal transition

NASA Astrophysics Data System (ADS)

Luo, Zhenfei; Wu, Zhiming; Wang, Tao; Xu, Xiangdong; Li, Weizhi; Li, Wei; Jiang, Yadong

2012-09-01

O-poor and O-rich thermochromic vanadium oxide (VOX) nanostructured thin films were prepared by applying reactive direct current magnetron sputtering and post-annealing in oxygen ambient. UV-visible spectrophotometer and spectroscopic ellipsometry were used to investigate the optical properties of films. It was found that, when the O-poor VOX thin film underwent semiconductor-to-metal transition, the values of optical conductivity and extinction coefficient in the visible region increased due to the existence of occupied band-gap states. This noticeable feature, however, was not observed for the O-rich film, which showed a similar optical behavior with the stoichiometric crystalline VO2 films reported in the literatures. Moreover, the O-poor VOX film exhibits consistent variations of transmission values in the visible/near-infrared region when it undergoes semiconductor-to-metal transition.

Morphology, Structural and Dielectric Properties of Vacuum Evaporated V2O5 Thin Films

NASA Astrophysics Data System (ADS)

Sengodan, R.; Shekar, B. Chandar; Sathish, S.

Vanadium pentoxide (V2O5) thin films were deposited on well cleaned glass substrate using evaporation technique under the pressure of 10-5 Torr. The thickness of the films was measured by the multiple beam interferometry technique and cross checked by using capacitance method. Metal-Insulator-Metal (MIM) structure was fabricated by using suitable masks to study dielectric properties. The dielectric properties were studied by employing LCR meter in the frequency range 12 Hz to 100 kHz for various temperatures. The temperature co- efficient of permittivity (TCP), temperature co-efficient of capacitance (TCC) and dielectric constant (ɛ) were calculated. The activation energy was calculated and found to be very low. The activation energy was found to be increasing with increase in frequency. The obtained low value of activation energy suggested that the hopping conduction may be due to electrons rather than ions.

Surface Brillouin scattering of opaque solids and thin supported films

PubMed

Comins; Every; Stoddart; Zhang; Crowhurst; Hearne

2000-03-01

Surface Brillouin scattering (SBS) has been used successfully for the study of acoustic excitations in opaque solids and thin supported films, at both ambient and high temperatures. A number of different systems have been investigated recently by SBS including crystalline silicon, amorphous silicon layers produced by ion bombardment and their high temperature recrystallisation, vanadium carbides, and a nickel-based superalloy. The most recent development includes the measurement of a supported gold film at high pressure. The extraction of the elastic constants is successfully accomplished by a combination of the angular dependence of surface wave velocities and the longitudinal wave threshold within the Lamb shoulder. The application of surface Green's function methods successfully reproduces the experimental SBS spectra. The discrepancies often observed between surface wave velocities and by ultrasonics measurements have been investigated and a detailed correction procedure for the SBS measurements has been developed.

On the influence of Ti-Al intermetallic coating architecture on mechanical properties and wear resistance of end mills

NASA Astrophysics Data System (ADS)

Vardanyan, E. L.; Budilov, V. V.; Ramazanov, K. N.; Ataullin, Z. R.

2017-07-01

Thin-film wear-resistant coatings are widely used to increase life and efficiency of metal cutting tools. This paper shows the results of a study on the influence of architecture (number, sequence and thickness of layers) of wear-resistant coatings on physical, mechanical and operational properties of end mills. Coatings consisting of alternating Ti-Al/Ti-Al-N layers of equal thickness demonstrated the best physical and mechanical properties. Durability of coated tools when processing materials from chromium-vanadium steel increased twice as compared to uncoated tools.

Effects of dietary vanadium in mallard ducks

USGS Publications Warehouse

White, D.H.; Dieter, M.P.

1978-01-01

Adult mallard ducks fed 0, 1, 10, or 100 ppm vanadyl sulfate in the diet were sacrificed after 12 wk on treatment; tissues were analyzed for vanadium. No birds died during the study and body weights did not change. Vanadium accumulated to higher concentrations in the bone and liver than in other tissues. Concentrations in bones of hens were five times those in bones of drakes, suggesting an interaction between vanadium and calcium mobilization in laying hens. Vanadium concentrations in most tissues were significantly correlated and increased with treatment level. Lipid metabolism was altered in laying hens fed 100 ppm vanadium. Very little vanadium accumulated in the eggs of laying hens.

Vanadium accumulation in carbonaceous rocks: A review of geochemical controls during deposition and diagenesis

USGS Publications Warehouse

Breit, G.N.; Wanty, R.B.

1991-01-01

Published data relevant to the geochemistry of vanadium were used to evaluate processes and conditions that control vanadium accumulation in carbonaceous rocks. Reduction, adsorption, and complexation of dissolved vanadium favor addition of vanadium to sediments rich in organic carbon. Dissolved vanadate (V(V)) species predominate in oxic seawater and are reduced to vanadyl ion (V(IV)) by organic compounds or H2S. Vanadyl ion readily adsorbs to particle surfaces and is added to the sediment as the particles settle. The large vanadium concentrations of rocks deposited in marine as compared to lacustrine environments are the result of the relatively large amount of vanadium provided by circulating ocean water compared to terrestrial runoff. Vanadium-rich carbonaceous rocks typically have high contents of organically bound sulfur and are stratigraphically associated with phosphate-rich units. A correspondence between vanadium content and organically bound sulfur is consistent with high activities of H2S during sediment deposition. Excess H2S exited the sediment into bottom waters and favored reduction of dissolved V(V) to V(IV) or possibly V(III). The stratigraphic association of vanadiferous and phosphatic rocks reflects temporal and spatial shifts in bottom water chemistry from suboxic (phosphate concentrated) to more reducing (euxinic?) conditions that favor vanadium accumulation. During diagenesis some vanadium-organic complexes migrate with petroleum out of carbonaceous rocks, but significant amounts of vanadium are retained in refractory organic matter or clay minerals. As carbon in the rock evolves toward graphite during metamorphism, vanadium is incorporated into silicate minerals. ?? 1991.

Efficient Separation and Extraction of Vanadium and Chromium in High Chromium Vanadium Slag by Selective Two-Stage Roasting-Leaching

NASA Astrophysics Data System (ADS)

Wen, Jing; Jiang, Tao; Xu, Yingzhe; Liu, Jiayi; Xue, Xiangxin

2018-06-01

Vanadium and chromium are important rare metals, leading to a focus on high chromium vanadium slag (HCVS) as a potential raw material to extract vanadium and chromium in China. In this work, a novel method based on selective two-stage roasting-leaching was proposed to separate and extract vanadium and chromium efficiently in HCVS. XRD, FT-IR, and SEM were utilized to analyze the phase evolutions and microstructure during the whole process. Calcification roasting, which can calcify vanadium selectively using thermodynamics, was carried out in the first roasting stage to transfer vanadium into acid-soluble vanadate and leave chromium in the leaching residue as (Fe0.6Cr0.4)2O3 after H2SO4 leaching. When HCVS and CaO were mixed in the molar ratio CaO/V2O3 (n(CaO)/n(V2O3)) of 0.5 to 1.25, around 90 pct vanadium and less than 1 pct chromium were extracted in the first leaching liquid, thus achieving the separation of vanadium and chromium. In the second roasting stage, sodium salt, which combines with chromium easily, was added to the first leaching residue to extract chromium and 95.16 pct chromium was extracted under the optimal conditions. The total vanadium and chromium leaching rates were above 95 pct, achieving the efficient separation and extraction of vanadium and chromium. The established method provides a new technique to separate vanadium and chromium during roasting rather than in the liquid form, which is useful for the comprehensive application of HCVS.

Efficient Separation and Extraction of Vanadium and Chromium in High Chromium Vanadium Slag by Selective Two-Stage Roasting-Leaching

NASA Astrophysics Data System (ADS)

Wen, Jing; Jiang, Tao; Xu, Yingzhe; Liu, Jiayi; Xue, Xiangxin

2018-04-01

Vanadium and chromium are important rare metals, leading to a focus on high chromium vanadium slag (HCVS) as a potential raw material to extract vanadium and chromium in China. In this work, a novel method based on selective two-stage roasting-leaching was proposed to separate and extract vanadium and chromium efficiently in HCVS. XRD, FT-IR, and SEM were utilized to analyze the phase evolutions and microstructure during the whole process. Calcification roasting, which can calcify vanadium selectively using thermodynamics, was carried out in the first roasting stage to transfer vanadium into acid-soluble vanadate and leave chromium in the leaching residue as (Fe0.6Cr0.4)2O3 after H2SO4 leaching. When HCVS and CaO were mixed in the molar ratio CaO/V2O3 (n(CaO)/n(V2O3)) of 0.5 to 1.25, around 90 pct vanadium and less than 1 pct chromium were extracted in the first leaching liquid, thus achieving the separation of vanadium and chromium. In the second roasting stage, sodium salt, which combines with chromium easily, was added to the first leaching residue to extract chromium and 95.16 pct chromium was extracted under the optimal conditions. The total vanadium and chromium leaching rates were above 95 pct, achieving the efficient separation and extraction of vanadium and chromium. The established method provides a new technique to separate vanadium and chromium during roasting rather than in the liquid form, which is useful for the comprehensive application of HCVS.

Effect of tea polyphenols on production performance, egg quality, and hepatic antioxidant status of laying hens in vanadium-containing diets.

PubMed

Yuan, Z H; Zhang, K Y; Ding, X M; Luo, Y H; Bai, S P; Zeng, Q F; Wang, J P

2016-07-01

This study was conducted to determine the effect of tea polyphenols (TP) on production performance, egg quality, and hepatic-antioxidant status of laying hens in vanadium-containing diets. A total of 300 Lohman laying hens (67 wk old) were used in a 1 plus 3 × 3 experiment design in which hens were given either a diet without vanadium and TP supplementation (control) or diets supplemented with 5, 10, or 15 mg V/kg and TP (0, 600, 1,000 mg/kg) diets for 8 wk, which included 2 phases: a 5-wk accumulation phase and a 3-wk depletion phase. During the accumulation phase, dietary vanadium addition decreased (linear, P < 0.01) albumen height and Haugh unit (HU), and TP supplementation mitigated (linear effect, P < 0.01) this reduction effect induced by vanadium. Eggshell thickness (linear, P < 0.01), redness (linear and quadratic, P < 0.05), and yellowness (linear and quadratic, P < 0.05) were decreased by vanadium and increased by the effect of TP when a vanadium-containing diet was fed. In the depletion phase, the bleaching effect on eggshells induced by vanadium disappeared one wk after vanadium withdrawal. Eggshell thickness, eggshell strength, albumen height, and HU were lower (P < 0.05) in the 15 mg/kg vanadium group compared with the control diet until 2 wk post vanadium challenge, but hens fed 15 mg/kg vanadium and 600 mg/kg TP showed no difference from the control diet only after 1 wk withdrawal. In the liver, the activity of glutathione S-transferases and glutathione peroxidase was increased (linear, P < 0.01) with the TP addition at 5 wk in the accumulation phase in the vanadium-containing diet; the malondialdehyde content increased (linear effect, P = 0.02) with the addition of vanadium. The results indicate that supplementation of 10 and 15 mg/kg vanadium resulted in reduced albumen quality, bleaching effect on eggshell color, and antioxidant stress in the liver. The effect of TP addition can prevent laying hens from the adverse effect of vanadium on egg quality, liver antioxidant stress and shorten the recovery time. © 2016 Poultry Science Association Inc.

Sol-gel preparation of silica and titania thin films

NASA Astrophysics Data System (ADS)

Thoř, Tomáš; Václavík, Jan

2016-11-01

Thin films of silicon dioxide (SiO2) and titanium dioxide (TiO2) for application in precision optics prepared via the solgel route are being investigated in this paper. The sol-gel process presents a low cost approach, which is capable of tailoring thin films of various materials in optical grade quality. Both SiO2 and TiO2 are materials well known for their application in the field of anti-reflective and also highly reflective optical coatings. For precision optics purposes, thickness control and high quality of such coatings are of utmost importance. In this work, thin films were deposited on microscope glass slides substrates using the dip-coating technique from a solution based on alkoxide precursors of tetraethyl orthosilicate (TEOS) and titanium isopropoxide (TIP) for SiO2 and TiO2, respectively. As-deposited films were studied using spectroscopic ellipsometry to determine their thickness and refractive index. Using a semi-empirical equation, a relationship between the coating speed and the heat-treated film thickness was described for both SiO2 and TiO2 thin films. This allows us to control the final heat-treated thin film thickness by simply adjusting the coating speed. Furthermore, films' surface was studied using the white-light interferometry. As-prepared films exhibited low surface roughness with the area roughness parameter Sq being on average of 0.799 nm and 0.33 nm for SiO2 and TiO2, respectively.

Sol-gel synthesis and optical properties of titanium dioxide thin film

NASA Astrophysics Data System (ADS)

Ullah, Irfan; Khattak, Shaukat Ali; Ahmad, Tanveer; Saman; Ludhi, Nayab Ali

2018-03-01

The titanium dioxide (TiO2) is synthesized by sol-gel method using titanium-tetra-iso-propoxide (TTIP) as a starting material, and deposited on the pre-cleaned glass substrate using spin coating technique at optimized parameters. Energy dispersive X-ray (EDX) spectroscopy confirms successful TiO2 growth. The optical properties concerning the transmission and absorption spectra show 85% transparency and 3.28 eV wide optical band gap for indirect transition, calculated from absorbance. The exponential behavior of absorption edge is observed and attributed to the localized states electronic transitions, curtailed in the indirect band gap of the thin film. The film reveals decreasing refractive index with increasing wavelength. The photoluminescence (PL) study ascertains that luminescent properties are due to the surface defects.

Vanadium distribution in rats and DNA cleavage by vanadyl complex: implication for vanadium toxicity and biological effects.

PubMed Central

Sakurai, H

1994-01-01

Vanadium ion is toxic to animals. However, vanadium is also an agent used for chemoprotection against cancers in animals. To understand both the toxic and beneficial effects we studied vanadium distribution in rats. Accumulation of vanadium in the liver nuclei of rats given low doses of compounds in the +4 or +5 oxidation state was greater than in the liver nuclei of rats given high doses of vanadium compounds or the vanadate (+5 oxidation state) compound. Vanadium was incorporated exclusively in the vanadyl (+4 oxidation state) form. We also investigated the reactions of vanadyl ion and found that incubation of DNA with vanadyl ion and hydrogen peroxide (H2O2) led to intense DNA cleavage. ESR spin trapping demonstrated that hydroxyl radicals are generated during the reactions of vanadyl ion and H2O2. Thus, we propose that the mechanism for vanadium-dependent toxicity and antineoplastic action is due to DNA cleavage by hydroxyl radicals generated in living systems. PMID:7843133

Semiconductor to Metal Transition Characteristics of VO2/NiO Epitaxial Heterostructures Integrated with Si(100)

NASA Astrophysics Data System (ADS)

Molaei, Roya

The novel functionalities of Vanadium dioxide (VO2), such as, several orders of magnitude transition in resistivity and IR transmittance, provide the exciting opportunity for the development of next generation memory, sensor, and field-effect based devices. A critical issue in the development of practical devices based on metal oxides is the integration of high quality epitaxial oxide thin films with the existing silicon technology which is based on silicon (100) substrates. However, silicon is not suitable for epitaxial growth of oxides owing to its tendency to readily form an amorphous oxide layer or silicide at the film-substrate interface. The oxide films deposited directly on silicon exhibit poor crystallinity and are not suitable for device applications. To overcome this challenge, appropriate substrate templates must be developed for the growth of oxide thin films on silicon substrates. The primary objective of this dissertation was to develop an integration methodology of VO2 with Si (100) substrates so they could be used in "smart" sensor type of devices along with other multifunctional devices on the same silicon chip. This was achieved by using a NiO/c- YSZ template layer deposited in situ. It will be shown that if the deposition conditions are controlled properly. This approach was used to integrate VO 2 thin films with Si (100) substrates using pulsed laser deposition (PLD) technique. The deposition methodology of integrating VO2 thin films on silicon using various other template layers will also be discussed. Detailed epitaxial relationship of NiO/c-YSZ/Si(100) heterostructures as a template to growth of VO2 as well as were studied. We also were able to create a p-n junction within a single NiO epilayer through subsequent nanosecond laser annealing, as well as established a structure-property correlation in NiO/c-YSZ/Si(100) thin film epitaxial heterostructures with especial emphasis on the stoichiometry and crystallographic characteristics. NiO/c-YSZ/Si(100) heterostructures were used as template to grow fully relaxed VO2 thin films. The detailed x-ray diffraction, transmission electron microscopy (TEM), electrical characterization results for the deposited films will be presented. In the framework on domain matching epitaxy, epitaxial growth of VO2 (tetragonal crystal structure at growth temperature) on NiO has been explained. Our detailed phi-scan X-ray diffraction measurements corroborate our understanding of the epitaxial growth and in-plane atomic arrangements at the interface. It was observed that the transition characteristics (sharpness, over which electrical property changes are completed, amplitude, transition temperature, and hysteresis) are a strong function of microstructure, strain, and stoichiometry. We have shown that by the choosing the right template layer, strain in the VO2 thin films can be fully relaxed and near-bulk VO2 transition temperatures can be achieved. Finally, I will present my research work on modification of semiconductor-to-metal transition characteristics and effect on room temperature magnetic properties of VO2 thin films upon laser annealing. While the microstructure (epitaxy, crystalline quality etc.) and phase were preserved, we envisage these changes to occur as a result of introduction of oxygen vacancies upon laser treatment.

Aqueous vanadium ion dynamics relevant to bioinorganic chemistry: A review.

PubMed

Kustin, Kenneth

2015-06-01

Aqueous solutions of the four highest vanadium oxidation states exhibit four diverse colors, which only hint at the diverse reactions that these ions can undergo. Cationic vanadium ions form complexes with ligands; anionic vanadium ions form complexes with ligands and self-react to form isopolyanions. All vanadium species undergo oxidation-reduction reactions. With a few exceptions, elucidation of the dynamics of these reactions awaited the development of fast reaction techniques before the kinetics of elementary ligation, condensation, reduction, and oxidation of the aqueous vanadium ions could be investigated. As the biological roles played by endogenous and therapeutic vanadium expand, it is appropriate to bring the results of the diverse kinetics studies under one umbrella. To achieve this goal this review presents a systematic examination of elementary aqueous vanadium ion dynamics. Copyright © 2014 Elsevier Inc. All rights reserved.

Vanadium

USGS Publications Warehouse

Kelley, Karen D.; Scott, Clinton T.; Polyak, Désirée E.; Kimball, Bryn E.; Schulz, Klaus J.; DeYoung,, John H.; Seal, Robert R.; Bradley, Dwight C.

2017-12-19

Vanadium is used primarily in the production of steel alloys; as a catalyst for the chemical industry; in the making of ceramics, glasses, and pigments; and in vanadium redox-flow batteries (VRBs) for large-scale storage of electricity. World vanadium resources in 2012 were estimated to be 63 million metric tons, which include about 14 million metric tons of reserves. The majority of the vanadium produced in 2012 was from China, Russia, and South Africa.Vanadium is extracted from several different types of mineral deposits and from fossil fuels. These deposits include vanadiferous titanomagnetite (VTM) deposits, sandstone-hosted vanadium (with or without uranium) deposits (SSV deposits), and vanadium-rich black shales. VTM deposits are the principal source of vanadium and consist of magmatic accumulations of ilmenite and magnetite containing 0.2 to 1 weight percent vanadium pentoxide (V2O5). SSV deposits are another important source; these deposits have average ore grades that range from 0.1 to greater than 1 weight percent V2O5. The United States has been and is currently the main producer of vanadium from SSV deposits, particularly those on the Colorado Plateau. Vanadium-rich black shales occur in marine successions that were deposited in epeiric (inland) seas and on continental margins. Concentrations in these shales regularly exceed 0.18 weight percent V2O5 and can be as high as 1.7 weight percent V2O5. Small amounts of vanadium have been produced from the Alum Shale in Sweden and from ferrophosphorus slag generated during the reduction of phosphate to elemental phosphorus in ore from shales of the Phosphoria Formation in Idaho and Wyoming. Because vanadium enrichment occurs in beds that are typically only a few meters thick, most of the vanadiferous black shales are not currently economic, although they may become an important resource in the future. Significant amounts of vanadium are recovered as byproducts of petroleum refining, and processing of coal, tar sands, and oil shales may be important future sources.Vanadium occurs in one of four oxidation states in nature: +2, +3, +4, and +5. The V3+ ion has an octahedral radius that is almost identical to that of (Fe3+) and (Al3+) and, therefore, it substitutes in ferromagnesian minerals. During weathering, much of the vanadium may partition into newly formed clay minerals, and it either remains in the +3 valence state or oxidizes to the +4 valence state, both of which are relatively insoluble. If erosion is insignificant but chemical leaching is intense, the residual material may be enriched in vanadium, as are some bauxites and laterites. During the weathering of igneous, residual, or sedimentary rocks, some vanadium oxidizes to the +5 valence state, especially in the intensive oxidizing conditions that are characteristic of arid climates.The average contents of vanadium in the environment are as follows: soils [10 to 500 parts per million (ppm)]; streams and rivers [0.2 to 2.9 parts per billion (ppb)]; and coastal seawater (0.3 to 2.8 ppb). Concentrations of vanadium in soils (548 to 7,160 ppm) collected near vanadium mines in China, the Czech Republic, and South Africa are many times greater than natural concentrations in soils. Additionally, if deposits contain sulfide minerals such as chalcocite, pyrite, and sphalerite, high levels of acidity may be present if sulfide dissolution is not balanced by the presence of acid-neutralizing carbonate minerals. Some of the vanadium-bearing deposit types, particularly some SSV and black-shale deposits, contain appreciable amounts of carbonate minerals, which lowers the acid-generation potential.Vanadium is a micronutrient with a postulated requirement for humans of less than 10 micrograms per day, which can be met through dietary intake. Primary and secondary drinking water regulations for vanadium are not currently in place in the United States. Vanadium toxicity is thought to result from an intake of more than 10 to 20 milligrams per day. Vanadium is essential for some biological processes and organisms. For example, some nitrogen-fixing bacteria require vanadium for producing enzymes necessary to convert nitrogen from the atmosphere into ammonia, which is a more biologically accessible form of nitrogen.

Nonequilibrium gas absorption in rotating permeable media

NASA Astrophysics Data System (ADS)

Baev, V. K.; Bazhaikin, A. N.

2016-08-01

The absorption of ammonia, sulfur dioxide, and carbon dioxide by water and aqueous solutions in rotating permeable media, a cellular porous disk, and a set of spaced-apart thin disks has been considered. The efficiency of cleaning air to remove these impurities is determined, and their anomalously high solubility (higher than equilibrium value) has been discovered. The results demonstrate the feasibility of designing cheap efficient rotor-type absorbers to clean gases of harmful impurities.

Polymer-encapsulated carbon capture liquids that tolerate precipitation of solids for increased capacity

DOEpatents

Aines, Roger D; Bourcier, William L; Spadaccini, Christopher M; Stolaroff, Joshuah K

2015-02-03

A system for carbon dioxide capture from flue gas and other industrial gas sources utilizes microcapsules with very thin polymer shells. The contents of the microcapsules can be liquids or mixtures of liquids and solids. The microcapsules are exposed to the flue gas and other industrial gas and take up carbon dioxide from the flue gas and other industrial gas and eventual precipitate solids in the capsule.

Gd, I-doped TiO2 thin films coated on solid waste material: synthesis, characterization, and photocatalytic activity under UV or visible light irradiation

NASA Astrophysics Data System (ADS)

Deng, Siwei; Yu, Jiang; Yang, Chun; Chang, Jiahua; Wang, Yizheng; Wang, Ping; Xie, Shiqian

2017-10-01

In this work, titanium dioxide thin films doped with different concentrations of gadolinium (Gd) and iodine (I) were synthesized using the sol-gel method and successfully coated on solid waste material (made in our lab) by dipping, resulting in the titanium dioxide thin-film-coated material (TiO2M). Then, the doped titanium dioxide thin films were characterized by X-ray diffraction (XRD), SEM, and UV-Vis spectroscopy; the optimum coating cycle was evaluated by removal rates of COD and ammonia nitrogen in raw wastewater and secondary effluent. Moreover, the photocatalytic activity was determined by degradation efficiency of methyl orange. The results showed that TiO2M had desirable reusability and the photocatalytic activity was attractive under ultraviolet light irradiation. Furthermore, it is found that the amount of dopant in TiO2 was a key parameter in increasing the photoactivity. 1% Gd-doped TiO2M exhibited the best photocatalytic activity for the degradation of methyl orange with the removal rate reaching 85.55%. The result was in good agreement with the observed smaller crystallite size and profitable crystal structure (anatase phase). Besides, the TiO2M (0.8% Gd-doped TiO2M, 1% Gd-doped TiO2M, 10% I-doped TiO2M, and 5% I-1% Gd-doped TiO2M) with desirable photocatalytic activity at ultraviolet light irradiation was selected for the visible light photocatalytic experiments with taking methyl orange as the target pollutants. The results showed that all of them exhibited the similar photocatalytic activity after 7 h of sunlight irradiation (around 90% removal effect). In general, this research developed a very effective and environmentally friendly photocatalyst for pollutant degradation.

Monolithic microcircuit techniques and processes

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1972-01-01

Brief discussions of the techniques used to make dielectric and metal thin film depositions for monolithic circuits are presented. Silicon nitride deposition and the properties of silicon nitride films are discussed. Deposition of dichlorosilane and thermally grown silicon dioxide are reported. The deposition and thermal densification of borosilicate, aluminosilicate, and phosphosilicate glasses are discussed. Metallization for monolithic circuits and the characteristics of thin films are also included.

Development studies for a novel wet oxidation process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dhooge, P.M.; Hakim, L.B.

1994-01-01

A catalytic wet oxidation process (DETOX), which uses an acidic iron solution to oxidize organic compounds to carbon dioxide, water, and other simple products, was investigated as a potential method for the treatment of multicomponent hazardous and mixed wastes. The organic compounds picric acid, poly(vinyl chloride), tetrachlorothiophene, pentachloropyridine, Aroclor 1260 (a polychlorinated biphenyl), and hexachlorobenzene were oxidized in 125 ml reaction vessels. The metals arsenic, barium, beryllium, cadmium, cerium (as a surrogate for plutonium), chromium, lead, mercury, neodymium (as a surrogate for uranium), nickel, and vanadium were tested in the DETOX solution. Barium, beryllium, cerium, chromium, mercury, neodymium, nickel, andmore » vanadium were all found to be very soluble (>100 g/l) in the DETOX chloride-based solution. Arsenic, barium, cadmium, and lead solubilities were lower. Lead could be selectively precipitated from the DETOX solution. Chromium(VI) was reduced to relatively non-toxic chromium(III) by the solution. Six soils were contaminated with arsenic, barium, beryllium, chromium, lead, and neodymium oxides at approximately 0.1% by weight, and benzene, trichloroethene, mineral oil, and Aroclor 1260 at approximately 5% by weight total, and 5.g amounts treated with the DETOX solution in unstirred 125. ml reaction bombs. It is felt that soil treatment in a properly designed system is entirely possible despite incomplete oxidation of the less volatile organic materials in these unstirred tests.« less

40 CFR 440.30 - Applicability; description of the uranium, radium and vanadium ores subcategory.

Code of Federal Regulations, 2014 CFR

2014-07-01

... vanadium ores are produced; and (b) mills using the acid leach, alkaline leach, or combined acid and alkaline leach process for the extraction of uranium, radium and vanadium. Only vanadium byproduct...

40 CFR 440.30 - Applicability; description of the uranium, radium and vanadium ores subcategory.

Code of Federal Regulations, 2012 CFR

2012-07-01

... vanadium ores are produced; and (b) mills using the acid leach, alkaline leach, or combined acid and alkaline leach process for the extraction of uranium, radium and vanadium. Only vanadium byproduct...

40 CFR 440.30 - Applicability; description of the uranium, radium and vanadium ores subcategory.

Code of Federal Regulations, 2013 CFR

2013-07-01

... vanadium ores are produced; and (b) mills using the acid leach, alkaline leach, or combined acid and alkaline leach process for the extraction of uranium, radium and vanadium. Only vanadium byproduct...

Vanadium Recovery from Oil Fly Ash by Carbon Removal and Roast-Leach Process

NASA Astrophysics Data System (ADS)

Jung, Myungwon; Mishra, Brajendra

2018-02-01

This research mainly focuses on the recovery of vanadium from oil fly ash by carbon removal and the roast-leach process. The oil fly ash contained about 85% unburned carbon and 2.2% vanadium by weight. A vanadium-enriched product was obtained after carbon removal, and the vanadium content of this product was 19% by weight. Next, the vanadium-enriched product was roasted with sodium carbonate to convert vanadium oxides to water-soluble sodium metavanadate. The roasted sample was leached with water at 60°C, and the extraction percentage of vanadium was about 92% by weight. Several analytical techniques, such as inductively coupled plasma atomic emission spectroscopy (ICP-AES), x-ray fluorescence (XRF), and thermogravimetric and differential thermal analysis (TG-DTA), were utilized for sample analyses. Thermodynamic modeling was also conducted with HSC chemistry software to explain the experimental results.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Luo, Qingtao; Li, Liyu; Nie, Zimin

We will show a new method to differentiate the vanadium transport from concentration gradient and that from electric field. Flow batteries with vanadium and iron redox couples as the electro-active species were employed to investigate the transport behavior of vanadium ions in the presence of electric field. It was shown that electric field accelerated the positive-to-negative and reduced the negative-to-positive vanadium ions transport in charge process and affected the vanadium ions transport in an opposite way in discharge process. In addition, a method was designed to differentiate the concentration gradient-driven vanadium ions diffusion and electric field-driven vanadium ions migration. Simplifiedmore » mathematical model was established to simulate the vanadium ions transport in real charge-discharge operation of flow battery. The concentration gradient diffusion coefficients and electric-migration coefficients of V2+, V3+, VO2+, and VO2+ across Nafion membrane were obtained by fitting the experimental data.« less

Exposure to fuel-oil ash and welding emissions during the overhaul of an oil-fired boiler.

PubMed

Liu, Youcheng; Woodin, Mark A; Smith, Thomas J; Herrick, Robert F; Williams, Paige L; Hauser, Russ; Christiani, David C

2005-09-01

The health effects of exposure to vanadium in fuel-oil ash are not well described at levels ranging from 10 to 500 microg/m(3). As part of a larger occupational epidemiologic study that assessed these effects during the overhaul of a large oil-fired boiler, this study was designed to quantify boilermakers' exposures to fuel-oil ash particles, metals, and welding gases, and to identify determinants of these exposures. Personal exposure measurements were conducted on 18 boilermakers and 11 utility workers (referents) before and during a 3-week overhaul. Ash particles < 10 microm in diameter (PM(10), mg/m(3)) were sampled over full work shifts using a one-stage personal size selective sampler containing a polytetrafluoroethylene filter. Filters were digested using the Parr bomb method and analyzed for the metals vanadium (V), nickel (Ni), iron (Fe), chromium (Cr), cadmium (Cd), lead (Pb), manganese (Mn), and arsenic (As) by inductively coupled plasma mass spectrometry. Nitrogen dioxide (NO(2)) was measured with an Ogawa passive badge-type sampler and ozone (O(3)) with a personal active pump sampler.Time-weighted average (TWA) exposures were significantly higher (p < 0.05) for boilermakers than for utility workers for PM(10) (geometric mean: 0.47 vs. 0.13 mg/m(3)), V (8.9 vs. 1.4 microg/m(3)), Ni (7.4 vs. 1.8 microg/m(3)) and Fe (56.2 vs. 11.2 microg/m(3)). Exposures were affected by overhaul time periods, tasks, and work locations. No significant increases were found for O(3) or NO(2) for boilermakers or utility workers regardless of overhaul period or task group. Fuel-oil ash was a major contributor to boilermakers' exposure to PM(10) and metals. Vanadium concentrations sometimes exceeded the 2003 American Conference of Governmental Industrial Hygienists (ACGIH) threshold limit value.

Knocking on wood: base metal complexes as catalysts for selective oxidation of lignin models and extracts.

PubMed

Hanson, Susan K; Baker, R Tom

2015-07-21

This work began as part of a biomass conversion catalysis project with UC Santa Barbara funded by the first NSF Chemical Bonding Center, CATSB. Recognizing that catalytic aerobic oxidation of diol C-C bonds could potentially be used to break down lignocellulose, we began to synthesize oxovanadium complexes and explore their fundamental reactivity. Of course there were theories regarding the oxidation mechanism, but our mechanistic studies soon revealed a number of surprises of the type that keep all chemists coming back to the bench! We realized that these reactions were also exciting in that they actually used the oxygen-on-every-carbon property of biomass-derived molecules to control the selectivity of the oxidation. When we found that these oxovanadium complexes tended to convert sugars predominantly to formic acid and carbon dioxide, we replaced one of the OH groups with an ether and entered the dark world of lignin chemistry. In this Account, we summarize results from our collaboration and from our individual labs. In particular, we show that oxidation selectivity (C-C vs C-O bond cleavage) of lignin models using air and vanadium complexes depends on the ancillary ligands, the reaction solvent, and the substrate structure (i.e., phenolic vs non-phenolic). Selected vanadium complexes in the presence of added base serve as effective alcohol oxidation catalysts via a novel base-assisted dehydrogenation pathway. In contrast, copper catalysts effect direct C-C bond cleavage of these lignin models, presumably through a radical pathway. The most active vanadium catalyst exhibits unique activity for the depolymerization of organosolv lignin. After Weckhuysen's excellent 2010 review on lignin valorization, the number of catalysis studies and approaches on both lignin models and extracts has expanded rapidly. Today we are seeing new start-ups and lignin production facilities sprouting up across the globe as we all work to prove wrong the old pulp and paper chemist's adage: you can make anything from lignin except money!

Thirty years through vanadium chemistry.

PubMed

Costa Pessoa, J

2015-06-01

The relevance of vanadium in biological systems is known for many years and vanadium-based catalysts have important industrial applications, however, till the beginning of the 80s research on vanadium chemistry and biochemistry did not receive much attention from the scientific community. The understanding of the broad bioinorganic implications resulting from the similarities between phosphate and vanadate(V) and the discovery of vanadium dependent enzymes gave rise to an enormous increase in interest in the chemistry and biological relevance of vanadium. Thereupon the last 30years corresponded to a period of enormous research effort in these fields, as well as in medicinal applications of vanadium and in the development of catalysts for use in fine-chemical synthesis, some of these inspired by enzymatic active sites. Since the 80s my group in collaboration with others made contributions, described throughout this text, namely in the understanding of the speciation of vanadium compounds in aqueous solution and in biological fluids, and to the transport of vanadium compounds in blood plasma and their uptake by cells. Several new types of vanadium compounds were also synthesized and characterized, with applications either as prospective therapeutic drugs or as homogeneous or heterogenized catalysts for the production of fine chemicals. The developments made are described also considering the international context of the evolution of the knowledge in the chemistry and bioinorganic chemistry of vanadium compounds during the last 30years. This article was compiled based on the Vanadis Award presentation at the 9th International Vanadium Symposium. Copyright © 2015 Elsevier Inc. All rights reserved.

[The vanadium compounds: chemistry, synthesis, insulinomimetic properties].

PubMed

Fedorova, E V; Buriakina, A V; Vorob'eva, N M; Baranova, N I

2014-01-01

The review considers the biological role of vanadium, its participation in various processes in humans and other mammals, and the anti-diabetic effect of its compounds. Vanadium salts have persistent hypoglycemic and antihyperlipidemic effects and reduce the probability of secondary complications in animals with experimental diabetes. The review contains a detailed description of all major synthesized vanadium complexes having antidiabetic activity. Currently, vanadium complexes with organic ligands are more effective and safer than the inorganic salts. Despite the proven efficacy of these compounds as the anti-diabetic agents in animal models, only one organic complex of vanadium is currently under the second phase of clinical trials. All of the considered data suggest that vanadium compound are a new promising class of drugs in modern pharmacotherapy of diabetes.

Bioleaching of vanadium from barren stone coal and its effect on the transition of vanadium speciation and mineral phase

NASA Astrophysics Data System (ADS)

Wang, Xin; Lin, Hai; Dong, Ying-bo; Li, Gan-yu

2018-03-01

This study determined the optimal conditions required to obtain maximum vanadium extraction and examined the transition of mineral phases and vanadium speciation during the bioleaching process. Parameters including the initial pH value, initial Fe2+ concentration, solid load, and inoculum quantity were examined. The results revealed that 48.92wt% of the vanadium was extracted through bioleaching under optimal conditions. Comparatively, the chemical leaching yield (H2SO4, pH 2.0) showed a slower and milder increase in vanadium yield. The vanadium bioleaching yield was 35.11wt% greater than the chemical leaching yield. The Community Bureau of Reference (BCR) sequential extraction results revealed that 88.62wt% of vanadium existed in the residual fraction. The bacteria substantially changed the distribution of the vanadium speciation during the leaching process, and the residual fraction decreased to 48.44wt%. The X-ray diffraction (XRD) and Fourier transform infrared (FTIR) results provided evidence that the crystal lattice structure of muscovite was destroyed by the bacteria.

Why Antidiabetic Vanadium Complexes are Not in the Pipeline of "Big Pharma" Drug Research? A Critical Review.

PubMed

Scior, Thomas; Guevara-Garcia, Jose Antonio; Do, Quoc-Tuan; Bernard, Philippe; Laufer, Stefan

2016-01-01

Public academic research sites, private institutions as well as small companies have made substantial contributions to the ongoing development of antidiabetic vanadium compounds. But why is this endeavor not echoed by the globally operating pharmaceutical companies, also known as "Big Pharma"? Intriguingly, today's clinical practice is in great need to improve or replace insulin treatment against Diabetes Mellitus (DM). Insulin is the mainstay therapeutically and economically. So, why do those companies develop potential antidiabetic drug candidates without vanadium (vanadium- free)? We gathered information about physicochemical and pharmacological properties of known vanadium-containing antidiabetic compounds from the specialized literature, and converted the data into explanations (arguments, the "pros and cons") about the underpinnings of antidiabetic vanadium. Some discoveries were embedded in chronological order while seminal reviews of the last decade about the Medicinal chemistry of vanadium and its history were also listed for further understanding. In particular, the concepts of so-called "noncomplexed or free" vanadium species (i.e. inorganic oxido-coordinated species) and "biogenic speciation" of antidiabetic vanadium complexes were found critical and subsequently documented in more details to answer the question.

Physiological and anthocyanin biosynthesis genes response induced by vanadium stress in mustard genotypes with distinct photosynthetic activity.

PubMed

Imtiaz, Muhammad; Mushtaq, Muhammad Adnan; Nawaz, Muhammad Amjad; Ashraf, Muhammad; Rizwan, Muhammad Shahid; Mehmood, Sajid; Aziz, Omar; Rizwan, Muhammad; Virk, Muhammad Safiullah; Shakeel, Qaiser; Ijaz, Raina; Androutsopoulos, Vasilis P; Tsatsakis, Aristides M; Coleman, Michael D

2018-06-13

The present study aimed to elucidate the photosynthetic performance, antioxidant enzyme activities, anthocyanin contents, anthocyanin biosynthetic gene expression, and vanadium uptake in mustard genotypes (purple and green) that differ in photosynthetic capacity under vanadium stress. The results indicated that vanadium significantly reduced photosynthetic activity in both genotypes. The activities of the antioxidant enzymes were increased significantly in response to vanadium in both genotypes, although the purple exhibited higher. The anthocyanin contents were also reduced under vanadium stress. The anthocyanin biosynthetic genes were highly expressed in the purple genotype, notably the genes TT8, F3H, and MYBL2 under vanadium stress. The results indicate that induction of TT8, F3H, and MYBL2 genes was associated with upregulation of the biosynthetic genes required for higher anthocyanin biosynthesis in purple compared with the green mustard. The roots accumulated higher vanadium than shoots in both mustard genotypes. The results indicate that the purple mustard had higher vanadium tolerance. Copyright © 2018 Elsevier B.V. All rights reserved.

Realization of Long-Term Air Stability in the Organic Magnet Vanadium Tetracyanoethylene

NASA Astrophysics Data System (ADS)

Froning, Ian; Harberts, Megan; Lu, Yu; Yu, Howard; Epstein, Arthur J.; Johnston-Halperin, Ezekiel

2015-03-01

The organic ferrimagnet vanadium tetracyanoethylene (V[TCNE]x) has potential uses in both microwave electronics and spintronics due to the combination of high temperature magnetic ordering (TC >600 K), extremely sharp ferromagnetic resonance (peak to peak linewidth of 1 G), and low-temperature conformal deposition via chemical vapor deposition (CVD; deposition temperature of 50 C), but air-sensitivity leads to the complete degradation of the films within 2 hours under ambient conditions. We have encapsulated thin films of V[TCNE]x using a UV-cured epoxy that increases film lifetime to over 700 hours as measured by the remanent magnetization. The saturation magnetization and Curie temperature decay more slowly than the remanence, and the coercivity is unchanged after 340 hours of air exposure. Fourier transform infrared spectroscopy (FTIR) shows that the epoxy does not react with the film, and magnetometry measurements show that the epoxy does not impact bulk magnetic properties. This encapsulation strategy enables experimental protocols and investigations that were not previously possible for air-sensitive samples and points the way toward the development of practical applications for this promising organic-based magnetic material. Supported by NSF Grant DMR 1207243, and the NanoSystems Laboratory at the Ohio State University.

Kiln emissions and potters' exposures.

PubMed

Hirtle, B; Teschke, K; van Netten, C; Brauer, M

1998-10-01

Some ten thousand British Columbia potters work in small private studios, cooperative facilities, educational institutions, or recreation centers. There has been considerable concern that this diffuse, largely unregulated activity may involve exposures to unacceptable levels of kiln emissions. Pottery kiln emissions were measured at 50 sites--10 from each of 5 categories: professional studios, recreation centers, elementary schools, secondary schools, and colleges. Area monitoring was done 76 cm from firing kilns and 1.6 m above the floor to assess breathing zone concentrations of nitrogen dioxide, carbon monoxide, sulfur dioxide, fluorides, aldehydes, aluminum, antimony, arsenic, barium, beryllium, boron, cadmium, chromium, cobalt, copper, gold, iron, lead, lithium, magnesium, manganese, mercury, nickel, selenium, silver, vanadium, and zinc. Personal exposures to the same metals were measured at 24 sites. Almost all measured values were well below permissible concentrations for British Columbia work sites and American Conference of Governmental Industrial Hygienists (ACGIH) threshold limit values (TLVs) with the following two exceptions. A single firing duration (495 minute) acrolein measurement adjacent to an electric kiln (0.109 ppm) exceeded these guidelines. One 15-minute sulfur dioxide measurement collected adjacent to a gas kiln (5.7 ppm) exceeded the ACGIH short-term exposure limit. The fact that concentrations in small, ventilated kiln rooms ranked among the highest measured gives rise to concern that unacceptable levels of contamination may exist where small kiln rooms remain unventilated. Custom designed exhaust hoods and industrial heating, ventilating, and air-conditioning systems were the most effective ventilation strategies. Passive diffusion and wall/window fans were least effective.

Effects of V2O3 buffer layers on sputtered VO2 smart windows: Improved thermochromic properties, tunable width of hysteresis loops and enhanced durability

NASA Astrophysics Data System (ADS)

Long, Shiwei; Cao, Xun; Sun, Guangyao; Li, Ning; Chang, Tianci; Shao, Zewei; Jin, Ping

2018-05-01

Vanadium dioxide (VO2) is one of the most well-known thermochromic materials, which exhibits a notable optical change from transparent to reflecting in the infrared region upon a metal-insulator phase transition. For practical applications, VO2 thin films should be in high crystalline quality to obtain a strong solar modulation ability (ΔTsol). Meanwhile, narrow hysteresis loops and robust ambient durability are also indispensable for sensitivity and long-lived utilization, respectively. In this work, a series of high-quality V2O3/VO2 bilayer structures were grown on quartz glass substrates by reactive magnetron sputtering. Basically, the bottom V2O3 acts as the buffer layer to improve the crystallinity of the top VO2, while the VO2 serves as the thermochromic layer to guarantee the solar modulation ability for energy-saving. We observed an obvious increase in ΔTsol of 76% (from 7.5% to 13.2%) for VO2 films after introducing V2O3 buffer layers. Simultaneously, a remarkable reduction by 79% (from 21.9 °C to 4.7 °C) in width of hysteresis loop was obtained when embedding 60 nm V2O3 buffer for 60 nm VO2. In addition, VO2 with non-stoichiometry of V2O3±x buffer demonstrates a broadening hysteresis loops width, which is derived from the lattice distortion caused by lattice imperfection. Finally, durability of VO2 has been significantly improved due to positive effects of V2O3 buffer layer. Our results lead to a comprehensive enhancement in crystallinity of VO2 and shed new light on the promotion of thermochromic property by homologous oxides for VO2.

Electrically driven hybrid photonic metamaterials for multifunctional control

NASA Astrophysics Data System (ADS)

Kang, Lei; Liu, Liu; Campbell, Sawyer D.; Yue, Taiwei; Ren, Qiang; Mayer, Theresa S.; Werner, Douglas H.

2017-08-01

The unique light-matter interaction in metamaterials, a type of artificial medium in which the geometrical features of subunits dominate their optical responses, have been utilized to achieve exotic material properties that are rare or nonexistent in natural materials. Furthermore, to extend their behaviors, active materials have been introduced into metamaterial systems to advance tunability, switchability and nonlinearity. Nevertheless, practical examples of versatile photonic metamaterials remain exceedingly rare for two main reasons. On the one hand, in sharp contrast to the broad material options available at lower frequencies, it is less common to find active media in the optical regime that can provide pronounced dielectric property changes under external stimuli, such as electric and magnetic fields. Vanadium dioxide (VO2), offering a large refractive index variation over a broad frequency range due to its near room temperature insulator-to-metal transition (IMT), has been favored in recent studies on tunable metamaterials. On the other hand, it turns out that regulating responses of hybrid metamaterials to external forces in an integrated manner is not a straightforward task. Recently, metamaterial-enabled devices (i.e., metadevices) with `self-sufficient' or `self-contained' electrical and optical properties have enabled complex functionalities. Here, we present a design methodology along with the associated experimental validation of a VO2 thin film integrated optical metamaterial absorber as a hybrid photonic platform for electrically driven multifunctional control, including reflectance switching, a rewritable memory process and manageable localized camouflage. The nanoengineered topologically continuous metal structure simultaneously supports the optical resonance and electrical functionality that actuates the phase transition in VO2 through the process of Joule heating. This work provides a universal approach to creating self-sufficient and highly-versatile nanophotonic systems.

Sharpness and intensity modulation of the metal-insulator transition in ultrathin VO2 films by interfacial structure manipulation

NASA Astrophysics Data System (ADS)

McGee, Ryan; Goswami, Ankur; Pal, Soupitak; Schofield, Kalvin; Bukhari, Syed Asad Manzoor; Thundat, Thomas

2018-03-01

Vanadium dioxide (VO2) undergoes a structural transformation from monoclinic (insulator) to tetragonal (metallic) upon heating above 340 K, accompanied by abrupt changes to its electronic, optical, and mechanical properties. Not only is this transition scientifically intriguing, but there are also numerous applications in sensing, memory, and optoelectronics. Here we investigate the effect different substrates and the processing conditions have on the characteristics metal-insulator transition (MIT), and how the properties can be tuned for specific applications. VO2 thin films were grown on c -plane sapphire (0001) and p-type silicon <100 > by pulsed laser deposition. High-resolution x-ray diffraction along with transmission electron microscopy reveals textured epitaxial growth on sapphire by domain-matching epitaxy, while the presence of a native oxide layer on silicon prevented any preferential growth resulting in a polycrystalline film. An orientation relationship of <001 > (010)VO2||<11 ¯00 > (0001)Al 2O3 was established for VO2 grown on sapphire, while no such relationship was found for VO2 grown on silicon. Surface-energy minimization is the driving force behind grain growth, as the lowest energy VO2 plane grew on silicon, while on sapphire the desire for epitaxial growth was dominant. Polycrystallinity of films grown on silicon caused a weaker and less prominent MIT than observed on sapphire, whose MIT was higher in magnitude and steeper in slope. The position of the MIT was shown to depend on the competing effects of misfit strain and grain growth. Higher deposition temperatures caused an increase in the MIT, while compressive strain resulted in a decreased MIT.

Commercialization of the Chevron FCC vanadium trap

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kennedy, J.V.; Kuehler, C.W.; Krishna, A.S.

1995-09-01

Vanadium, present to varying degrees in FCC feed, deposits on the catalyst virtually quantitatively in the cracking process. In resid operations, vanadium levels on catalyst can reach 10,000 ppm at typical catalyst make-up rates. Once on the catalyst, vanadium destroys the zeolite and restricts access to active sites. This reduces catalyst activity. A vanadium trap is a material that when introduced into the catalyst inventory selectively reacts with migrating vanadium, thus protecting the zeolite and other active components of the catalyst. The trap may be incorporated into the catalyst, or introduced as a separate particle. Only a limited amount ofmore » trap can be incorporated into the catalyst without limiting the amount of zeolite that can be included. Gulf began development of a vanadium trap during the early 1980`s. The work produced a variety of promising materials whose use as vanadium traps was subsequently patented. The work ultimately led to a formulation with a phase very active for trapping vanadium while still quite sulfur tolerant. Based on these results, an extensive pilot plant evaluation was undertaken by Chevron after the Chevron-Gulf merger to better simulate commercial operation. The paper describes pilot plant tests as well as 3 commercial tests of this vanadium trap.« less

Spatial distribution of vanadium and microbial community responses in surface soil of Panzhihua mining and smelting area, China.

PubMed

Cao, Xuelong; Diao, Muhe; Zhang, Baogang; Liu, Hui; Wang, Song; Yang, Meng

2017-09-01

Spatial distribution of vanadium in surface soils from different processing stages of vanadium-bearing titanomagnetite in Panzhihua mining and smelting area (China) as well as responses of microbial communities including bacteria and fungi to vanadium were investigated by fieldwork and laboratory incubation experiment. The vanadium contents in this region ranged from 149.3 to 4793.6 mg kg -1 , exceeding the soil background value of vanadium in China (82 mg kg -1 ) largely. High-throughput DNA sequencing results showed bacterial communities from different manufacturing locations were quite diverse, but Bacteroidetes and Proteobacteria were abundant in all samples. The contents of organic matter, available P, available S and vanadium had great influences on the structures of bacterial communities in soils. Bacterial communities converged to similar structure after long-term (240 d) cultivation with vanadium containing medium, dominating by bacteria which can tolerate or reduce toxicities of heavy metals. Fungal diversities decreased after cultivation, but Ascomycota and Ciliophora were still the most abundant phyla as in the original soil samples. Results in this study emphasize the urgency of investigating vanadium contaminations in soils and provide valuable information on how vanadium contamination influences bacterial and fungal communities. Copyright © 2017 Elsevier Ltd. All rights reserved.

Controlled coordination in vanadium(V) dimethylhydrazido compounds.

PubMed

Sakuramoto, Takashi; Moriuchi, Toshiyuki; Hirao, Toshikazu

2016-11-01

The vanadium(V) dimethylhydrazido compounds were structurally characterized to elucidate the effect of the alkoxide ligands in the coordination environment of vanadium(V) hydrazido center. The single-crystal X-ray structure determination of the vanadium(V) dimethylhydrazido compound with isopropoxide ligands revealed a dimeric structure with the V(1)-N(1) distance of 1.680(5)Å, in which each vanadium atom is coordinated in a distorted trigonal-bipyramidal geometry (τ 5 =0.81) with the hydrazido and bridging isopropoxide ligands in the apical positions. On the contrary, nearly tetrahedral arrangement around the vanadium metal center (τ 4 =0.06) with the V(1)-N(1) distance of 1.660(2)Å was observed in the vanadium(V) dimethylhydrazido compound with tert-butoxide ligands. The introduction of the 2,2',2″-nitrilotriethoxide ligand led to a pseudo-trigonal-bipyramidal geometry (τ 5 =0.92) at the vanadium center with the V(1)-N(1) distance of 1.691(5)Å, wherein vanadium atom is pulled out of the plane formed by the nitrilotriethoxide oxygen atoms in the direction of the hydrazido nitrogen. The coordination from the apical ligand in the vanadium(V) dimethylhydrazido compound was found to result in the longer V(1)-N(1) distance. Copyright © 2016 Elsevier Inc. All rights reserved.

The toxicity of vanadium on gastrointestinal, urinary and reproductive system, and its influence on fertility and fetuses malformations.

PubMed

Wilk, Aleksandra; Szypulska-Koziarska, Dagmara; Wiszniewska, Barbara

2017-09-25

Vanadium is a transition metal that has a unique and beneficial effect on both humans and animals. For many years, studies have suggested that vanadium is an essential trace element. Its biological properties are of interest due to its therapeutic potential, including in the treatment of diabetes mellitus. Vanadium deficiencies can lead to a range of pathologies. However, excessive concentration of this metal can cause irreversible damage to various tissues and organs. Vanadium toxicity mainly manifests in gastrointestinal symptoms, including diarrhea, vomiting, and weight reduction. Vanadium also exhibits hepatotoxic and nephrotoxic properties, including glomerulonephritis and pyelonephritis. Vanadium compounds may also lead to partial degeneration of the seminiferous epithelium of the seminiferous tubules in the testes and can affect male fertility. This paper describes the harmful effects of vanadium on the morphology and physiology of both animal and human tissues, including the digestive system, the urinary tract, and the reproductive system. What is more, the following study includes data concerning the correlation between the above-mentioned metal and its influence on fertility and fetus malformations. Additionally, this research identifies the doses of vanadium which lead to pathological alterations becoming visible within tissues. Moreover, this study includes information about the protective efficacy of some substances in view of the toxicity of vanadium.

A general synthesis strategy for the multifunctional 3D polypyrrole foam of thin 2D nanosheets

NASA Astrophysics Data System (ADS)

Xue, Jiangli; Mo, Maosong; Liu, Zhuming; Ye, Dapeng; Cheng, Zhihua; Xu, Tong; Qu, Liangti

2018-05-01

A 3D macroporous conductive polymer foam of thin 2D polypyrrole (PPy) nanosheets is developed by adopting a novel intercalation of guest (monomer Py) between the layers of the lamellar host (3D vanadium oxide foam) template-replication strategy. The 3D PPy foam of thin 2D nanosheets exhibits diverse functions including reversible compressibility, shape memory, absorption/adsorption and mechanically deformable supercapacitor characteristics. The as-prepared 3D PPy foam of thin nanosheets is highly light weight with a density of 12 mg·cm-3 which can bear the large compressive strain up to 80% whether in wet or dry states; and can absorb organic solutions or extract dye molecules fast and efficiently. In particular, the PPy nanosheet-based foamas a mechanically deformable electrode material for supercapacitors exhibits high specific capacitance of 70 F·g-1 at a fast charge-discharge rate of 50 mA·g-1, superior to that of any other typical pure PPy-based capacitor. We envision that the strategy presented here should be applicable to fabrication of a wide variety of organic polymer foams and hydrogels of low-dimensional nanostructures and even inorganic foams and hydrogels of low-dimensional nanostructures, and thus allow for exploration of their advanced physical and chemical properties.

A general synthesis strategy for the multifunctional 3D polypyrrole foam of thin 2D nanosheets

NASA Astrophysics Data System (ADS)

Xue, Jiangli; Mo, Maosong; Liu, Zhuming; Ye, Dapeng; Cheng, Zhihua; Xu, Tong; Qu, Liangti

2018-06-01

A 3D macroporous conductive polymer foam of thin 2D polypyrrole (PPy) nanosheets is developed by adopting a novel intercalation of guest (monomer Py) between the layers of the lamellar host (3D vanadium oxide foam) template-replication strategy. The 3D PPy foam of thin 2D nanosheets exhibits diverse functions including reversible compressibility, shape memory, absorption/adsorption and mechanically deformable supercapacitor characteristics. The as-prepared 3D PPy foam of thin nanosheets is highly light weight with a density of 12 mg·cm-3 which can bear the large compressive strain up to 80% whether in wet or dry states; and can absorb organic solutions or extract dye molecules fast and efficiently. In particular, the PPy nanosheet-based foam as a mechanically deformable electrode material for supercapacitors exhibits high specific capacitance of 70 F·g-1 at a fast charge-discharge rate of 50 mA·g-1, superior to that of any other typical pure PPy-based capacitor. We envision that the strategy presented here should be applicable to fabrication of a wide variety of organic polymer foams and hydrogels of low-dimensional nanostructures and even inorganic foams and hydrogels of low-dimensional nanostructures, and thus allow for exploration of their advanced physical and chemical properties.

Thin film materials and devices for resistive temperature sensing applications

NASA Astrophysics Data System (ADS)

Basantani, Hitesh A.

Thin films of vanadium oxide (VOx) and hydrogenated amorphous silicon (a-Si:H) are the two dominant material systems used in resistive infrared radiation detectors (microbolometers) for sensing long wave infrared (LWIR) wavelengths in the 8--14 microm range. Typical thin films of VO x (x < 2) currently used in the bolometer industry have a magnitude of temperature coefficient of resistance (TCR) between 2%/K -- 3%/K. In contrast, thin films of hydrogenated germanium (SiGe:H) have |TCR| between 3%/K to 4%/K. Devices made from either of these materials have resulted in similar device performance with NETD ≈ 25 mK. The performance of the microbolometers is limited by the electronic noise, especially 1/f noise. Therefore, regardless of the choice of bolometer sensing material and read out circuitry, manufacturers are constantly striving to reduce 1/f noise while simultaneously increasing TCR to give better signal to noise ratios in their bolometers and ultimately, better image quality with more thermal information to the end user. In this work, thin films of VOx and hydrogenated germanium (Ge:H), having TCR values > 4 %/K are investigated as potential candidates for higher sensitivity next generation of microbolometers. Thin films of VO x were deposited by Biased Target Ion Beam Deposition (BTIBD) (˜85 nm thick). Electrical characterization of lateral resistor structures showed resistivity ranging from 104 O--cm to 2.1 x 104 O--cm, TCR varying from --4%/K to --5%/K, normalized Hooge parameter (alphaH/n) of 5 x 10 -21 to 5 x 10-18 cm3. Thin films of Ge:H were deposited by plasma enhanced chemical vapor deposition (PECVD) by incorporating an increasing amount of crystal fraction in the growing thin films. Thin films of Ge:H having a mixed phase, amorphous + nanocrystalline, having a |TCR| > 6 %/K were deposited with resistivity < 2,300 O--cm and a normalized Hooge's parameter 'alphaH/n' < 2 x 10-20 cm3. Higher TCR materials are desired, however, such materials have higher resistivity and therefore unacceptable large electrical resistance in a lateral resistor configuration. This work looks at an alternate bolometer device design which incorporates higher TCR materials in a vertically integrated configuration. Thin films of high TCR hydrogenated germanium (Ge:H, |TCR| > 6%/K) and vanadium oxide (VOx, TCR > 5%/K) were integrated in lateral and through film configuration. The electrical performance of the vertically integrated devices is compared with lateral resistance structures. It was confirmed experimentally that the device impedance was significantly lowered while maintaining the signal to noise ratio of the lateral resistor configuration. The vertically integrated devices allow higher device currents without any increase in self heating. These structures may help reduce integration time and may result in higher frame rate. Finally, one dimensional arrays were fabricated using both lateral and vertically integrated configurations and their performance was evaluated. It was found that the performance of the lateral devices was limited by noise floor of the measurement setup used. However, due to the lower impedance of the vertically integrated resistors, a higher signal and therefore higher signal to noise ratio could be obtained. These vertically integrated devices exhibited low RMS noise values of 12 mK.

Role of thermal heating on the voltage induced insulator-metal transition in VO2.

PubMed

Zimmers, A; Aigouy, L; Mortier, M; Sharoni, A; Wang, Siming; West, K G; Ramirez, J G; Schuller, Ivan K

2013-02-01

We show that the main mechanism for the dc voltage or dc current induced insulator-metal transition in vanadium dioxide VO(2) is due to local Joule heating and not a purely electronic effect. This "tour de force" experiment was accomplished by using the fluorescence spectra of rare-earth doped micron sized particles as local temperature sensors. As the insulator-metal transition is induced by a dc voltage or dc current, the local temperature reaches the transition temperature indicating that Joule heating plays a predominant role. This has critical implications for the understanding of the dc voltage or dc current induced insulator-metal transition and has a direct impact on applications which use dc voltage or dc current to externally drive the transition.

Switchable wavelength-selective and diffuse metamaterial absorber/emitter with a phase transition spacer layer

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Hao; Yang, Yue; Wang, Liping, E-mail: liping.wang@asu.edu

2014-08-18

We numerically demonstrate a switchable metamaterial absorber/emitter by thermally turning on or off the excitation of magnetic resonance upon the phase transition of vanadium dioxide (VO{sub 2}). Perfect absorption peak exists around the wavelength of 5 μm when the excitation of magnetic resonance is supported with the insulating VO{sub 2} spacer layer. The wavelength-selective absorption is switched off when the magnetic resonance is disabled with metallic VO{sub 2} that shorts the top and bottom metallic structures. The resonance wavelength can be tuned with different geometry, and the switchable metamaterial exhibits diffuse behaviors at oblique angles. The results would facilitate the designmore » of switchable metamaterials for active control in energy and sensing applications.« less

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jackson, L.L.; Engleman, E.E.; Peard, J.L.

Sulfur was determined in plants and lichens by combustion of the sample and infrared detection of evolved sulfur dioxide using an automated sulfur analyzer. Vanadium pentaoxide was used as a combustion accelerator. Pelletization of the sample prior to combustion was not found to be advantageous. Washing studies showed that leaching of sulfur was not a major factor in the sample preparation. The combustion-IR analysis usually gave higher sulfur content than the turbidimetric analysis as well as shorter analysis time. Relative standard deviations of less than 7% were obtained by the combustion-IR technique when sulfur levels in plant material range frommore » 0.05 to 0.70%. Determination of sulfur in National Bureau of Standards botanical reference materials showed good agreement between the combustion-IR technique and other instrumental procedures. Seven NBS botanical reference materials were analyzed.« less

Voltage switching of a VO{sub 2} memory metasurface using ionic gel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Goldflam, M. D.; Liu, M. K.; Chapler, B. C.

2014-07-28

We demonstrate an electrolyte-based voltage tunable vanadium dioxide (VO{sub 2}) memory metasurface. Large spatial scale, low voltage, non-volatile switching of terahertz (THz) metasurface resonances is achieved through voltage application using an ionic gel to drive the insulator-to-metal transition in an underlying VO{sub 2} layer. Positive and negative voltage application can selectively tune the metasurface resonance into the “off” or “on” state by pushing the VO{sub 2} into a more conductive or insulating regime respectively. Compared to graphene based control devices, the relatively long saturation time of resonance modification in VO{sub 2} based devices suggests that this voltage-induced switching originates primarilymore » from electrochemical effects related to oxygen migration across the electrolyte–VO{sub 2} interface.« less

Ultrafast optical switching in three-dimensional photonic crystals

NASA Astrophysics Data System (ADS)

Mazurenko, D. A.

2004-09-01

The rapidly expanding research on photonic crystals is driven by potential applications in all-optical switches, optical computers, low-threshold lasers, and holographic data storage. The performance of such devices might surpass the speed of traditional electronics by several orders of magnitude and may result in a true revolution in nanotechnology. The heart of such devices would likely be an optical switching element. This thesis analyzes different regimes of ultrafast all-optical switching in various three-dimensional photonic crystals, in particular opals filled with silicon or vanadium dioxide and periodic arrays of silica-gold core-shell spherical particles with silica outer shell. In the experiment an ultrashort optical pulse is used to excite a photonic crystal and change its complex effective dielectric constant. The change in the imaginary part of the dielectric constant corresponds to the change in absorption that suppresses interference inside the photonic crystal and modifies the amplitude of the reflectivity, while the change in the real part of the dielectric constant accounts for a shift in a spectral position of the photonic stop band. The first type of switching is shown on an example of an opal filled with silicon. In this crystal, switching is induced by photo-excited carriers in silicon that act as an electron plasma and increase the absorption in silicon. Within 30 fs constructive interference inside the opal vanishes and Bragg reflectivity drops down. Changes in reflectivity reach values as high as 46% at maximum excitation power. The experimental results are in a good agreement with calculations. The second type of switching is demonstrated in opal filled with vanadium dioxide. Here, the optical switching is driven by a photoinduced phase transition of vanadium dioxide. The phase transition takes place on a subpicosecond time scale and changes the effective dielectric constant of the opal. As a result, the spectral position of the photonic stop band shifts to the blue leading to large (up to 35%) changes in the reflectivity. Metallo-dielectric photonic crystals give even more possibilities for the band-tuning, since in addition to the resonance for light they posses surface plasmon resonances. The interplay of these resonances leads to unusual optical phenomena. As an example, reflected light produces an unexpected beaming in the apexes of a hexagon with a divergence angle of 8°, in our sample. This angle is too small to be attributed to a simple diffraction on the periodic lattice of core-shells but can be explained by interference between surface plasmons and propagating surface waves. Time-resolved spectra demonstrate rapid changes immediately after the arrival of the pump pulse. Ultrafast reflection changes are dramatically enhanced by the plasmon resonances, and can reach values as high as 35%. A completely different mechanism for ultrafast switching is explored, based on the excitation of coherent acoustic radial vibrations of the gold spheres. This results in a 4% modulation of the reflectivity on a subnanosecond timescale. The observed oscillation properties of our gold-shell spheres are in excellent agreement with the calculations. The described results show that the demonstrated dynamical changes in the reflectivity of a three-dimensional photonic crystal can be made both large and ultrafast and therefore may prove to be relevant for future applications.

Silicon Dioxide Thin Film Mediated Single Cell Nucleic Acid Isolation

PubMed Central

Bogdanov, Evgeny; Dominova, Irina; Shusharina, Natalia; Botman, Stepan; Kasymov, Vitaliy; Patrushev, Maksim

2013-01-01

A limited amount of DNA extracted from single cells, and the development of single cell diagnostics make it necessary to create a new highly effective method for the single cells nucleic acids isolation. In this paper, we propose the DNA isolation method from biomaterials with limited DNA quantity in sample, and from samples with degradable DNA based on the use of solid-phase adsorbent silicon dioxide nanofilm deposited on the inner surface of PCR tube. PMID:23874571

Properties of Hydrogen Sulfide Sensors Based on Thin Films of Tin Dioxide and Tungsten Trioxide

NASA Astrophysics Data System (ADS)

Sevastianov, E. Yu.; Maksimova, N. K.; Chernikov, E. V.; Sergeichenko, N. V.; Rudov, F. V.

2016-12-01

The effect of hydrogen sulfide in the concentration range of 0-100 ppm on the characteristics of thin films of tin dioxide and tungsten trioxide obtained by the methods of magnetron deposition and modified with gold in the bulk and on the surface is studied. The impurities of antimony and nickel have been additionally introduced into the SnO2 bulk. An optimal operating temperature of sensors 350°C was determined, at which there is a satisfactory correlation between the values of the response to H2S and the response time. Degradation of the sensor characteristics is investigated in the long-term ( 0.5-1.5 years) tests at operating temperature and periodic exposure to hydrogen sulfide, as well as after conservation of samples in the laboratory air. It is shown that for the fabrication of H2S sensors, the most promising are thin nanocrystalline Au/WO3:Au films characterized by a linear concentration dependence of the response and high stability of parameters during exploitation.

Assessment of Dephosphorization During Vanadium Extraction Process in Converter

NASA Astrophysics Data System (ADS)

Chen, Lian; Diao, Jiang; Wang, Guang; Xie, Bing

2018-06-01

Dephosphorization during the vanadium extraction process in the converter was studied. The effects of the slag basicity and FeO content on the dephosphorization and the mineral phases in the phosphorus-containing vanadium slag are discussed. The results show that removal of phosphorus from the hot metal during the vanadium extraction process can be achieved by adding lime into the vanadium extraction converter. The highest dephosphorization rate was obtained at slag basicity of 1.93. The phosphorus distribution ratio increased with increasing FeO content up to 16-18% but decreased thereafter. Vanadium was present in the slag only as spinels rather than calcium vanadate. Phosphorus was still present in the form of calcium phosphate eutectic in calcium silicate. The present work proves that the vanadium extraction and dephosphorization processes are nonconflicting reactions.

Synthesis, Characterization, Antioxidant Status, and Toxicity Study of Vanadium-Rutin Complex in Balb/c Mice.

PubMed

Roy, Souvik; Majumdar, Sumana; Singh, Amit Kumar; Ghosh, Balaram; Ghosh, Nilanjan; Manna, Subhadip; Chakraborty, Tania; Mallick, Sougato

2015-08-01

A new trend was developed for the formation of a complex between vanadium and flavonoid derivatives in order to increase the intestinal absorption and to reduce the toxicity of vanadium compounds. The vanadium-rutin complex was characterized by several spectroscopic techniques like ultraviolet (UV)-visible, Fourier transform infrared (FTIR), NMR, mass spectrometry, and microscopic evaluation by scanning electron microscopy. The mononuclear complex was formed by the interaction between vanadium and rutin with 1:2 metal to ligand stoichiometry. Antioxidant activity of the complex was evaluated by 1,1-diphenyl-2 picrylhydrazyl, ferric-reducing power, and 2,2'-azin-obis 3-ethylbenzothiazoline-6-sulphonic acid methods. It was shown that radical scavenging activity and ferric-reducing potential of free rutin was lower as compared with vanadium-rutin complex. The study was also investigated for oral acute toxicity and 28 days repeated oral subacute toxicity study of vanadium-rutin complex in balb/c mice. The vanadium-rutin complex showed mortality at a dose of 120 mg/kg in the balb/c mice. In 28 days repeated oral toxicity study, vanadium-rutin complex was administered to both sex of balb/c mice at dose levels of 90, 45, and 20 ppm, respectively. In addition, subacute toxicity study of vanadium-rutin complex (at 90 ppm dose level) showed increase levels of white blood cell (WBC), total bilirubin, alanine aminotransferase (ALT), alkaline phosphatase (ALP), aspartate aminotransferase (AST), creatinine, and blood urea nitrogen and decrease level of total protein (TP) as compared with control group. Histopathological study of vanadium-rutin showed structural alteration in the liver, kidney, and stomach at 90 ppm dose level. No observed toxic level of vanadium-rutin complex at 20 ppm dose level could be good for further study.

Vanadium exposure-induced striatal learning and memory alterations in rats.

PubMed

Sun, Liping; Wang, Keyue; Li, Yan; Fan, Qiyuan; Zheng, Wei; Li, Hong

2017-09-01

Occupational and environmental exposure to vanadium has been associated with toxicities in reproductive, respiratory, and cardiovascular systems. The knowledge on whether and how vanadium exposure caused neurobehavioral changes remains incomplete. This study was designed to investigate the changes in learning and memory following drinking water exposure to vanadium, and to conduct the preliminary study on underlying mechanisms. Male Sprague-Dawley rats were exposed to vanadium dissolved in drinking water at the concentration of 0.0, 0.5, 1.0 and 2.0g/L, as the control, low-, medium-, and high- dose groups, respectively, for 12 weeks. The results by the Morris water maze test showed that the time for the testing animal to find the platform in the high exposed group was increased by 82.9% and 49.7%, as compared to animals in control and low-dose groups (p<0.05). There were significantly fewer rats in the medium- and high- dose groups than in the control group who were capable of crossing the platform (p<0.05). Quantitation of vanadium by atomic absorption spectrophotometry revealed a significant dose-dependent accumulation of vanadium in striatum (r=0.931, p<0.01). Histopathological examination further demonstrated a degenerative damage in vanadium-exposed striatum. Interestingly, with the increase of the dose of vanadium, the contents of neurotransmitter ACh, 5-HT and GABA in the striatum increased; however, the levels of Syn1 was significantly reduced in the exposed groups compared with controls (p<0.05). These data suggest that vanadium exposure apparently reduces the animals' learning ability. This could be due partly to vanadium's accumulation in striatum and the ensuing toxicity to striatal structure and synaptic plasticity. Further research is warranted for mechanistic understanding of vanadium-induced neurotoxicity. Copyright © 2017 Elsevier B.V. All rights reserved.

Electrolytic Manganese Dioxide Coatings on High Aspect Ratio Micro-Pillar Arrays for 3D Thin Film Lithium Ion Batteries.

PubMed

Zargouni, Yafa; Deheryan, Stella; Radisic, Alex; Alouani, Khaled; Vereecken, Philippe M

2017-05-27

In this work, we present the electrochemical deposition of manganese dioxide (MnO₂) thin films on carbon-coated TiN/Si micro-pillars. The carbon buffer layer, grown by plasma enhanced chemical vapor deposition (PECVD), is used as a protective coating for the underlying TiN current collector from oxidation, during the film deposition, while improving the electrical conductivity of the stack. A conformal electrolytic MnO₂ (EMD) coating is successfully achieved on high aspect ratio C/TiN/Si pillar arrays by tailoring the deposition process. Lithiation/Delithiation cycling tests have been performed. Reversible insertion and extraction of Li⁺ through EMD structure are observed. The fabricated stack is thus considered as a good candidate not only for 3D micorbatteries but also for other energy storage applications.

Electrolytic Manganese Dioxide Coatings on High Aspect Ratio Micro-Pillar Arrays for 3D Thin Film Lithium Ion Batteries

PubMed Central

Zargouni, Yafa; Deheryan, Stella; Radisic, Alex; Alouani, Khaled; Vereecken, Philippe M.

2017-01-01

In this work, we present the electrochemical deposition of manganese dioxide (MnO2) thin films on carbon-coated TiN/Si micro-pillars. The carbon buffer layer, grown by plasma enhanced chemical vapor deposition (PECVD), is used as a protective coating for the underlying TiN current collector from oxidation, during the film deposition, while improving the electrical conductivity of the stack. A conformal electrolytic MnO2 (EMD) coating is successfully achieved on high aspect ratio C/TiN/Si pillar arrays by tailoring the deposition process. Lithiation/Delithiation cycling tests have been performed. Reversible insertion and extraction of Li+ through EMD structure are observed. The fabricated stack is thus considered as a good candidate not only for 3D micorbatteries but also for other energy storage applications. PMID:28555017

Noise Spectroscopy in Strongly Correlated Oxides

NASA Astrophysics Data System (ADS)

Alsaqqa, Ali M.

Strongly correlated materials are an interesting class of materials, thanks to the novel electronic and magnetic phenomena they exhibit as a result of the interplay of various degrees of freedom. This gives rise to an array of potential applications, from Mott-FET to magnetic storage. Many experimental probes have been used to study phase transitions in strongly correlated oxides. Among these, resistance noise spectroscopy, together with conventional transport measurements, provides a unique viewpoint to understand the microscopic dynamics near the phase transitions in these oxides. In this thesis, utilizing noise spectroscopy and transport measurements, four different strongly correlated materials were studied: (1) neodymium nickel oxide (NdNiO 3) ultrathin films, (2) vanadium dioxide (VO2) microribbons, (3) copper vanadium bronze (CuxV2O 5) microribbons and (4) niobium triselenide (NbSe3) microribbons. Ultra thin films of rare-earth nickelates exhibit several temperature-driven phase transitions. In this thesis, we studied the metal-insulator and Neel transitions in a series of NdNiO3 films with different lattice mismatches. Upon colling down, the metal-insulator phase transition is accompanied by a structural (orthorohombic to monoclinic) and magnetic (paramagnetic to antiferromagnetic) transitions as well, making the problem more interesting and complex at the same time. The noise is of the 1/f type and is Gaussian in the high temperature phase, however deviations are seen in the low temperature phases. Below the metal-insulator transition, noise magnitude increases by orders of magnitude: a sign of inhomogeneous electrical conduction as result of phase separation. This is further assured by the non-Gaussian noise signature. At very low temperatures (T < 50 K), the noise behavior switches between Gaussian and non-Gaussian over several hours, possibly arising from dynamically competing ground states. VO2 is one of the most widely studied strongly correlated oxides and is important from the fundamental physics point of view and for applications. Its transition from a metal to an insulator (MIT) with simple application of voltage is quite interesting. For use in applications, e.g. transistors, it is very important to have a clear understanding of the MIT. Equally important is the question of whether the thermally- and electrically-driven transitions have the same origin. In this thesis, we tried to answer this question by utilizing three different tuning parameters: temperature, voltage bias and strain. Our results point to an unusual noise behavior in the high-temperature metallic phase, and provide valuable insight into the transport dynamics of this material. CuxV2O5 exhibit a metal-insulator transition and, more interestingly, a superconductivity transition. Unlike VO2, copper vanadium bronzes are much less studied and many questions are still open, including the possibility of charge ordering transition, just like in other members of the vanadium family. In this thesis, we studied this material and found evidences for charge ordering transitions and possibly other transitions as well. The last material, NbSe3, is a prototypical example of charge density wave systems, where Peierls transitions exist. Here, we study the effects of contacts on resistance noise in the 1D limit. The study aimed to confirm that the electric field threshold is sample length independent, to find out if there is a relation between contact separation and the noise generated and to explore the characteristics of the contact noise. The results confirm that the electric field threshold is independent of the sample length. It was also found that the separation between the contacts does not affect the noise. Finally, the contact noise is of the 1/f-type and has a Gaussian distribution. These results are timely for future device applications utilizing NbSe3.

Enhanced magnetization in VxFe3-xO4 nanoparticles

NASA Astrophysics Data System (ADS)

Pool, V. L.; Kleb, M. T.; Chorney, C. L.; Arenholz, E.; Idzerda, Y. U.

2015-12-01

Nanoparticles of VxFe3-xO4 with up to 33% vanadium doping (x=0 to 1) and a 9 nm diameter are investigated in order to determine the site preference of the vanadium and the magnetic behavior of the nanoparticles. The iron and vanadium L23-edge X-ray absorption spectroscopy (XAS) and X-ray magnetic circular dichroism (MCD) spectra are used to identify that vanadium initially substitutes into the tetrahedral iron site as V3+ and that the average iron moment is observed to increase with vanadium concentration up to 12.5% (x=.375). When the vanadium incorporation exceeds 12.5%, the XAS and MCD show that the vanadium begins substituting as V2+ in the octahedral coordination. This coincides with a rapid reduction of the average moment to zero by 25% (x=.75). The frequency-dependent alternating-current magnetic susceptibility (ACMS) displays a substantial increase in blocking temperature with vanadium concentration and indicated substantial variation in the strength of inter-particle interactions.

Investigation on the fates of vanadium and nickel during co-gasification of petroleum coke with biomass.

PubMed

Li, Jiazhou; Wang, Xiaoyu; Wang, Bing; Zhao, Jiantao; Fang, Yitian

2018-06-01

This study investigates the volatilization behaviors and mineral transformation of vanadium and nickel during co-gasification of petroleum coke with biomass. Moreover, the evolution of occurrence modes of vanadium and nickel was also determined by the method of sequential chemical extraction. The results show that the volatilities of vanadium and nickel in petroleum coke have a certain level of growth with an increase in the temperature. With the addition of biomass, their volatilities both show an obvious decrease. Organic matter and stable forms are the dominant chemical forms of vanadium and nickel. After gasification, organic-bound vanadium and nickel decompose completely and convert into other chemical forms. The crystalline phases of vanadium trioxide, coulsonite, nickel sulfide, and elemental nickel are clearly present in petroleum coke and biomass gasification ashes. When the addition of biomass reaches 60 wt%, the diffraction peaks of orthovanadate are found while that of vanadium trioxide disappear. Copyright © 2018 Elsevier Ltd. All rights reserved.

Comparison of Ultrasound-Assisted and Regular Leaching of Vanadium and Chromium from Roasted High Chromium Vanadium Slag

NASA Astrophysics Data System (ADS)

Wen, Jing; Jiang, Tao; Gao, Huiyang; Liu, Yajing; Zheng, Xiaole; Xue, Xiangxin

2018-02-01

Ultrasound-assisted leaching (UAL) was used for vanadium and chromium leaching from roasted material obtained by the calcification roasting of high-chromium-vanadium slag. UAL was compared with regular leaching. The effect of the leaching time and temperature, acid concentration, and liquid-solid ratio on the vanadium and chromium leaching behaviors was investigated. The UAL mechanism was determined from particle-size-distribution and microstructure analyses. UAL decreased the reaction time and leaching temperature significantly. Furthermore, 96.67% vanadium and less than 1% chromium were leached at 60°C for 60 min with 20% H2SO4 at a liquid-solid ratio of 8, which was higher than the maximum vanadium leaching rate of 90.89% obtained using regular leaching at 80°C for 120 min. Ultrasonic waves broke and dispersed the solid sample because of ultrasonic cavitation, which increased the contact area of the roasted sample and the leaching medium, the solid-liquid mass transfer, and the vanadium leaching rate.

Vanadium Electrolyte Studies for the Vanadium Redox Battery-A Review.

PubMed

Skyllas-Kazacos, Maria; Cao, Liuyue; Kazacos, Michael; Kausar, Nadeem; Mousa, Asem

2016-07-07

The electrolyte is one of the most important components of the vanadium redox flow battery and its properties will affect cell performance and behavior in addition to the overall battery cost. Vanadium exists in several oxidation states with significantly different half-cell potentials that can produce practical cell voltages. It is thus possible to use the same element in both half-cells and thereby eliminate problems of cross-contamination inherent in all other flow battery chemistries. Electrolyte properties vary with supporting electrolyte composition, state-of-charge, and temperature and this will impact on the characteristics, behavior, and performance of the vanadium battery in practical applications. This Review provides a broad overview of the physical properties and characteristics of the vanadium battery electrolyte under different conditions, together with a description of some of the processing methods that have been developed to produce vanadium electrolytes for vanadium redox flow battery applications. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Protective effects of Sesamum indicum extract against oxidative stress induced by vanadium on isolated rat hepatocytes.

PubMed

Hosseini, Mir-Jamal; Shahraki, Jafar; Tafreshian, Saman; Salimi, Ahmad; Kamalinejad, Mohammad; Pourahmad, Jalal

2016-08-01

Vanadium toxicity is a challenging problem to human and animal health with no entirely understanding cytotoxic mechanisms. Previous studies in vanadium toxicity showed involvement of oxidative stress in isolated liver hepatocytes and mitochondria via increasing of ROS formation, release of cytochrome c and ATP depletion after incubation with different concentrations (25-200 µM). Therefore, we aimed to investigate the protective effects of Sesamum indicum seed extract (100-300 μg/mL) against oxidative stress induced by vanadium on isolated rat hepatocytes. Our results showed that quite similar to Alpha-tocopherol (100 µM), different concentrations of extract (100-300 μg/mL) protected the isolated hepatocyte against all oxidative stress/cytotoxicity markers induced by vanadium in including cell lysis, ROS generation, mitochondrial membrane potential decrease and lysosomal membrane damage. Besides, vanadium induced mitochondrial/lysosomal toxic interaction and vanadium reductive activation mediated by glutathione in vanadium toxicity was significantly (P < 0.05) ameliorated by Sesamum indicum extracts. These findings suggested a hepato-protective role for extracts against liver injury resulted from vanadium toxicity. © 2015 Wiley Periodicals, Inc. Environ Toxicol 31: 979-985, 2016. © 2015 Wiley Periodicals, Inc.

Why Antidiabetic Vanadium Complexes are Not in the Pipeline of “Big Pharma” Drug Research? A Critical Review

PubMed Central

Scior, Thomas; Guevara-Garcia, Jose Antonio; Do, Quoc-Tuan; Bernard, Philippe; Laufer, Stefan

2016-01-01

Public academic research sites, private institutions as well as small companies have made substantial contributions to the ongoing development of antidiabetic vanadium compounds. But why is this endeavor not echoed by the globally operating pharmaceutical companies, also known as “Big Pharma”? Intriguingly, today’s clinical practice is in great need to improve or replace insulin treatment against Diabetes Mellitus (DM). Insulin is the mainstay therapeutically and economically. So, why do those companies develop potential antidiabetic drug candidates without vanadium (vanadium-free)? We gathered information about physicochemical and pharmacological properties of known vanadium-containing antidiabetic compounds from the specialized literature, and converted the data into explanations (arguments, the “pros and cons”) about the underpinnings of antidiabetic vanadium. Some discoveries were embedded in chronological order while seminal reviews of the last decade about the Medicinal chemistry of vanadium and its history were also listed for further understanding. In particular, the concepts of so-called “noncomplexed or free” vanadium species (i.e. inorganic oxido-coordinated species) and “biogenic speciation” of antidiabetic vanadium complexes were found critical and subsequently documented in more details to answer the question. PMID:26997154

The role of phosphate additive in stabilization of sulphuric-acid-based vanadium(V) electrolyte for all-vanadium redox-flow batteries

NASA Astrophysics Data System (ADS)

Roznyatovskaya, Nataliya V.; Roznyatovsky, Vitaly A.; Höhne, Carl-Christoph; Fühl, Matthias; Gerber, Tobias; Küttinger, Michael; Noack, Jens; Fischer, Peter; Pinkwart, Karsten; Tübke, Jens

2017-09-01

Catholyte in all-vanadium redox-flow battery (VRFB) which consists of vanadium salts dissolved in sulphuric acid is known to be stabilized by phosphoric acid to slow down the thermal aging at temperatures higher than 40 °C. To reveal the role of phosphoric acid, the thermally-induced aggregation is investigated using variable-temperature 51V, 31P, 17O, 1H nuclear magnetic resonance (NMR) spectroscopy and dynamic light scattering (DLS). The results indicate that the thermal stabilization of vanadium(V) electrolyte is attained by the involvement of monomeric and dimeric vanadium(V) species in the reaction with phosphoric acid which is concurrent to the formation of neutral hydroxo-aqua vanadium(V) precipitation precursor. The dimers are stabilized by counter ions due to association reaction or if such stabilization is not possible, precipitation of vanadium pentoxide is favored. The evolution of particles size distributions at 50 °C in electrolyte samples containing 1.6 M vanadium and 4.0 M total sulphate and the pathways of precipitate formation are discussed. The optimal total phosphate concentration is found to be of 0.15 M. However, the induction time is assumed to be dependent not only on the total phosphate concentrations, but also on the ratio of total vanadium(V) to sulphate concentrations.

Pharmacokinetics of vanadium in humans after intravenous administration of a vanadium containing albumin solution

PubMed Central

Heinemann, Günter; Fichtl, Burckhard; Vogt, Wolfgang

2003-01-01

Aims Vanadium is currently undergoing clinical trials as an oral drug in patients with noninsulin-dependent diabetes mellitus. Furthermore, vanadium occurs in elevated concentrations in the blood of patients receiving intravenous albumin solutions containing large amounts of the metal ion as an impurity. The present study was performed to examine the pharmacokinetics of vanadium in humans following a single intravenous (i.v.) dose of a commercial albumin solution containing a high amount of vanadium. Methods The study was conducted in five healthy volunteer subjects who received intravenously 90 ml of a commercial 20% albumin infusion solution containing 47.6 µg vanadium as an impurity. Vanadium concentrations in serum and urine were determined by electrothermal atomic absorption spectrometry. Results Vanadium serum concentrations after i.v. administration were measured for 31 days. The data could be fitted by a triexponential function corresponding formally to a three-compartment model. There was an initial rapid decrease in serum concentrations with half-lives of 1.2 and 26 h. This was followed by a long-terminal half-life time of 10 days. The terminal phase accounted for about 80% of the total area under the serum concentration-time curve (AUC). The mean apparent volume of distribution of the central compartment was found to be 10 l. The volume of distribution at steady state was 54 l, and total clearance was 0.15 l h−1. Vanadium was mainly excreted by the kidneys. About 52% of the dose was recovered in the urine after 12 days. Conclusions This study provides data on vanadium pharmacokinetics in healthy humans. PMID:12630973

Effect of vanadium contamination on the framework and micropore structure of ultra stable Y-zeolite.

PubMed

Etim, U J; Xu, B; Ullah, Rooh; Yan, Z

2016-02-01

Y-zeolites are the main component of fluid catalytic cracking (FCC) catalyst for conversion of crude petroleum to products of high demand including transportation fuel. We investigated effects of vanadium which is present as one of the impurities in FCC feedstock on the framework and micropore structure of ultra-stable (US) Y-zeolite. The zeolite samples were prepared and characterized using standard techniques including: (1) X-ray diffraction, (2) N2 adsorption employing non local density functional theory method, NLDFT, (3) Transmittance and Pyridine FTIR, (4) Transmittance electron microscopy (TEM), and (5) (27)Al and (29)Si MAS-NMR. Results revealed that in the presence of steam, vanadium caused excessive evolution of non inter-crystalline mesopores and structural damage. The evolved mesopore size averaged about 25.0nm at 0.5wt.% vanadium loading, far larger than mesopore size in zeolitic materials with improved hydrothermal stability and performance for FCC catalyst. A mechanism of mesopore formation based on accelerated dealumination has been proposed and discussed. Vanadium immobilization experiments conducted to mitigate vanadium migration into the framework clearly showed vanadium is mobile at reaction conditions. From the results, interaction of vanadium with the passivator limits and decreases mobility and activity of vanadium into inner cavities of the zeolite capable of causing huge structure breakdown and acid sites destruction. This study therefore deepens insight into the causes of alteration in activity and selectivity of vanadium contaminated catalyst and hints on a possible mechanism of passivation in vanadium passivated FCC catalyst. Copyright © 2015 Elsevier Inc. All rights reserved.

NREL, American Vanadium Demonstrate First-of-Its-Kind Battery Management

Science.gov Websites

System | Energy Systems Integration Facility | NREL American Vanadium NREL, American Vanadium Demonstrate First-of-Its-Kind Battery Management System NREL researchers are collaborating with American Vanadium, an integrated energy storage company, to evaluate and demonstrate the first North American

76 FR 78888 - Final Results of Expedited Sunset Review: Ferrovanadium and Nitrided Vanadium From Russia

Federal Register 2010, 2011, 2012, 2013, 2014

2011-12-20

... Sunset Review: Ferrovanadium and Nitrided Vanadium From Russia AGENCY: Import Administration... and nitrided vanadium from the Russian Federation (Russia), pursuant to section 751(c) of the Tariff... vanadium from Russia, pursuant to section 751(c) of the Act. See Initiation of Five-Year (``Sunset...

77 FR 51825 - Ferrovanadium and Nitrided Vanadium From Russia

Federal Register 2010, 2011, 2012, 2013, 2014

2012-08-27

... Nitrided Vanadium From Russia Determination On the basis of the record \\1\\ developed in the subject five... order on ferrovanadium and nitrided vanadium from Russia would not be likely to lead to continuation or... in USITC Publication 4345 (August 2012), entitled Ferrovanadium and Nitrided Vanadium from Russia...

40 CFR 440.80 - Applicability; description of the vanadium ore subcategory.

Code of Federal Regulations, 2011 CFR

2011-07-01

... vanadium ore subcategory. 440.80 Section 440.80 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS ORE MINING AND DRESSING POINT SOURCE CATEGORY Vanadium Ore Subcategory (Mined Alone and Not as a Byproduct) § 440.80 Applicability; description of the vanadium ore...

40 CFR 440.80 - Applicability; description of the vanadium ore subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... vanadium ore subcategory. 440.80 Section 440.80 Protection of Environment ENVIRONMENTAL PROTECTION AGENCY (CONTINUED) EFFLUENT GUIDELINES AND STANDARDS ORE MINING AND DRESSING POINT SOURCE CATEGORY Vanadium Ore Subcategory (Mined Alone and Not as a Byproduct) § 440.80 Applicability; description of the vanadium ore...

40 CFR 440.30 - Applicability; description of the uranium, radium and vanadium ores subcategory.

Code of Federal Regulations, 2010 CFR

2010-07-01

... uranium, radium and vanadium ores subcategory. 440.30 Section 440.30 Protection of Environment... SOURCE CATEGORY Uranium, Radium and Vanadium Ores Subcategory § 440.30 Applicability; description of the uranium, radium and vanadium ores subcategory. The provisions of this subpart C are applicable to...

Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

1993-01-01

In order to reduce heat transfer between a hot gas heat source and a metallic engine component, a thermal insulating layer of material is placed between them. This thermal barrier coating is applied by plasma spray processing the thin films. The coating has been successfully employed in aerospace applications for many years. Lewis Research Center, a leader in the development engine components coating technology, has assisted Caterpillar, Inc. in applying ceramic thermal barrier coatings on engines. Because these large engines use heavy fuels containing vanadium, engine valve life is sharply decreased. The barrier coating controls temperatures, extends valve life and reduces operating cost. Additional applications are currently under development.

Mineralogy and geochemistry of vanadium in the Colorado Plateau

USGS Publications Warehouse

Weeks, A.D.

1961-01-01

The chief domestic source of vanadium is uraniferous sandstone in the Colorado Plateau. Vanadium is 3-, 4-, or 5-valent in nature and, as oxides or combined with other elements, it forms more than 40 minerals in the Plateau ores. These ores have been studied with regard to the relative amounts of vanadium silicates and oxide-vanadates, uranium-vanadium ratios, the progressive oxidation of black low-valent ores to high-valent carnotite-type ores, and theories of origin. ?? 1961.

CATALYTIC PROMOTION OF THE ADSORPTION OF VANADIUM ON AN ANIONIC EXCHANGE RESIN

DOEpatents

Bailes, R.H.; Ellis, D.A.

1958-08-26

An improvement in the process for the recovery of vanadium from acidic phosphatic solutions is presented. In this process the vanadium is first oxidized to the pentavaleat state, and is then separated by contacting such solutions with an anion exchange resin whereby adsorption of the complexed pentavalent vanadium is effected. The improvement lies in the fact that adsorp tion of the vanadium complex by the anion exchange resin is promoted and improved by providing fiuoride ions in solution to be contacted.

Exploring electrolyte preference of vanadium nitride supercapacitor electrodes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Wang, Bo; Chen, Zhaohui; Lu, Gang

Highlights: • Hierarchical VN nanostructures were prepared on graphite foam. • Electrolyte preference of VN supercapacitor electrodes was explored. • VN showed better capacitive property in organic and alkaline electrolytes than LiCl. - Abstract: Vanadium nitride hierarchical nanostructures were prepared through an ammonia annealing procedure utilizing vanadium pentoxide nanostructures grown on graphite foam. The electrochemical properties of hierarchical vanadium nitride was tested in aqueous and organic electrolytes. As a result, the vanadium nitride showed better capacitive energy storage property in organic and alkaline electrolytes. This work provides insight into the charge storage process of vanadium nitride and our findings canmore » shed light on other transition metal nitride-based electrochemical energy storage systems.« less

Chloride supporting electrolytes for all-vanadium redox flow batteries.

PubMed

Kim, Soowhan; Vijayakumar, M; Wang, Wei; Zhang, Jianlu; Chen, Baowei; Nie, Zimin; Chen, Feng; Hu, Jianzhi; Li, Liyu; Yang, Zhenguo

2011-10-28

This paper examines vanadium chloride solutions as electrolytes for an all-vanadium redox flow battery. The chloride solutions were capable of dissolving more than 2.3 M vanadium at varied valence states and remained stable at 0-50 °C. The improved stability appeared due to the formation of a vanadium dinuclear [V(2)O(3)·4H(2)O](4+) or a dinuclear-chloro complex [V(2)O(3)Cl·3H(2)O](3+) in the solutions over a wide temperature range. The all-vanadium redox flow batteries with the chloride electrolytes demonstrated excellent reversibility and fairly high efficiencies. Only negligible, if any, gas evolution was observed. The improved energy capacity and good performance, along with the ease in heat management, would lead to substantial reduction in capital cost and life-cycle cost, making the vanadium chloride redox flow battery a promising candidate for stationary applications. This journal is © the Owner Societies 2011

Cellular uptake of titanium and vanadium from addition of salts or fretting corrosion in vitro

DOE Office of Scientific and Technical Information (OSTI.GOV)

Maurer, A.M.; Merritt, K.; Brown, S.A.

1994-02-01

The use of titanium and titanium-6% aluminum-4% vanadium alloy for dental and orthopedic implants has increased in the last decade. The implants are presumed to be compatible because oseointegration, bony apposition, and cell attachment are known. However, the cellular association of titanium and vanadium have remained unknown. This study examined the uptake of salts or fretting corrosion products. Titanium was not observed to be toxic to the cells. Vanadium was toxic at levels greater than 10[mu]g/mL. The percentage of cellular association of titanium was shown to be about 10 times that of vanadium. The percentage of cellular association of eithermore » element was greater from fretting corrosion than from the addition of salts. The presence of vanadium did not affect the cellular uptake of titanium. The presence of titanium decreased the cell association of vanadium.« less

Low-temperature direct synthesis of mesoporous vanadium nitrides for electrochemical capacitors

NASA Astrophysics Data System (ADS)

Lee, Hae-Min; Jeong, Gyoung Hwa; Kim, Sang-Wook; Kim, Chang-Koo

2017-04-01

Mesoporous vanadium nitrides are directly synthesized by a one-step chemical precipitation method at a low temperature (70 °C). Structural and morphological analyses reveal that vanadium nitride consist of long and slender nanowhiskers, and mesopores with diameters of 2-5 nm. Compositional analysis confirms the presence of vanadium in the VN structure, along with oxidized vanadium. The cyclic voltammetry and charge-discharge tests indicate that the obtained material stores charges via a combination of electric double-layer capacitance and pseudocapacitance mechanisms. The vanadium nitride electrode exhibits a specific capacitance of 598 F/g at a current density of 4 A/g. After 5000 charge-discharge cycles, the electrode has an equivalent series resistance of 1.42 Ω and retains 83% of its initial specific capacitance. This direct low-temperature synthesis of mesoporous vanadium nitrides is a simple and promising method to achieve high specific capacitance and low equivalent series resistance for electrochemical capacitor applications.

Vanadium in landscape components of western Transbaikalia

NASA Astrophysics Data System (ADS)

Kashin, V. K.

2017-10-01

Vanadium in soil-forming rocks, soils, and vegetation of forest-steppe, steppe, and dry-steppe landscapes of Transbaikalia has been studied. The mean element contents in rocks and soils are equal to its mean natural abundances (clarke values). The content of vanadium in soils is strictly determined by its content in parent materials; its dependence on the vanadium concentration in plants and on the soil pH and humus is less pronounced. With respect to the coefficient of biological uptake by plants, vanadium is assigned to the group of elements of slight accumulation (0.10-0.33) on mineral soils and of moderate accumulation (1.1-1.5) on peat bog soils. The mean vanadium concentration in steppe, meadow, and cultivated vegetation exceeds the norm for animals by 1.7-2.6 times but does not rich toxic levels. Vanadium uptake by plants is most intensive in meadow cenoses and is less intensive in dry-steppe cenoses.

Vanadium-uranium extraction from Wyoming vanadiferoud silicates. Report of investigations/1983

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hayashi, M.; Nichols, I.L.; Huiatt, J.L.

1983-11-01

The Bureau of Mines conducted laboratory studies on low-grade vanadiferous silicates from the Pumpkin Buttes and Nine Mile Lake deposits of Wyoming to examine techniques for extracting vanadium and uranium. Recovery from low-grade sources such as these could contribute to future vanadium production and reduce reliance on vanadium imports.

77 FR 54897 - Ferrovanadium and Nitrided Vanadium from the Russian Federation: Revocation of Antidumping Duty...

Federal Register 2010, 2011, 2012, 2013, 2014

2012-09-06

... nitrided vanadium from the Russian Federation (Russia) would not be likely to lead to continuation or... the antidumping duty order on ferrovanadium and nitrided vanadium from Russia. \\1\\ See Ferrovanadium and Nitrided Vanadium From Russia, 77 FR 51825 (August 27, 2012) (ITC Final). DATES: Effective Date...

76 FR 69736 - Draft Toxicological Review of Vanadium Pentoxide: In Support of Summary Information on the...

Federal Register 2010, 2011, 2012, 2013, 2014

2011-11-09

... Toxicological Review of Vanadium Pentoxide: In Support of Summary Information on the Integrated Risk Information..., ``Toxicological Review of Vanadium Pentoxide: In Support of Summary Information on the Integrated Risk Information... Vanadium Pentoxide: In Support of Summary Information on the Integrated Risk Information System (IRIS)'' is...

Essentiality and toxicity of vanadium supplements in health and pathology.

PubMed

Gruzewska, K; Michno, A; Pawelczyk, T; Bielarczyk, H

2014-10-01

The biological properties of vanadium complexes have become an object of interest due to their therapeutic potential in several diseases. However, the mechanisms of action of vanadium salts are still poorly understood. Vanadium complexes are cofactors for several enzymes and also exhibit insulin-mimetic properties. Thus, they are involved in the regulation of glucose metabolism, including in patients with diabetes. In addition, vanadium salts may also normalize blood pressure and play a key role in the metabolism of the thyroid and of iron as well as in the regulation of total cholesterol, cholesterol HDL and triglyceride (TG) levels in blood. Moreover, in cases of hypoxia, vanadium compounds may improve cardiomyocytes function. They may also exhibit both carcinogenic and anti-cancer properties. These include dose- and exposure-time-dependent induction and inhibition of the proliferation and survival of cancer cells. On the other hand, the balance between vanadium's therapeutic properties and its side effects has not yet been determined. Therefore, any studies on the potential use of vanadium compounds as supplements to support the treatment of a number of diseases must be strictly monitored for adverse effects.

Electronic structure of lead telluride-based alloys, doped with vanadium

NASA Astrophysics Data System (ADS)

Skipetrov, E. P.; Golovanov, A. N.; Slynko, E. I.; Slynko, V. E.

2013-01-01

The crystal structure, composition, galvanomagnetic properties in low magnetic fields (4.2 K ≤ T ≤ 300 K, B ≤ 0.07 T), and the Shubnikov-de Haas effect (T = 4.2 K, B ≤ 7 T) are studied in Pb1-x-ySnxVyTe (x = 0, 0.05-0.18) alloys synthesized by the Bridgman technique with variable vanadium impurity concentrations. It is shown that increasing the vanadium content leads to the formation of regions enriched in vanadium and of microscopic inclusions of compounds with compositions close to V3Te4. In Pb1-yVyTe stabilization of the Fermi level by a deep vanadium level, an insulator-metal transition, and a rise in the free electron concentration are observed as the vanadium content is increased. The variation in the free charge carrier concentration with increasing vanadium concentration in Pb1-yVyTe and Pb1-x-ySnxVyTe (x = 0.05-0.18) alloys is compared. Possible models for rearrangement of the electronic structure in Pb1-x-ySnxVyTe alloys with vanadium doping are discussed.

Kinetic model of whole-body vanadium metabolism: studies in sheep

DOE Office of Scientific and Technical Information (OSTI.GOV)

Patterson, B.W.; Hansard, S.L. II; Ammerman, C.B.

1986-08-01

A compartmental model for vanadium metabolism in sheep has been proposed. The model is consistent with data obtained from sheep fed a control diet (2.6 ppm vanadium) containing 0 or 200 ppm supplemental vanadium. Sheep were administered UYV dioxovanadium either orally or intravenously. Blood feces, and urine radioactivity were monitored for 6 days postdosing. Several new insights regarding vanadium metabolism are suggested and tested against the data using the model. Some of these include 1) significant absorption of UYV occurs from the upper gastrointestinal tract; 2) an in vivo process is necessary in order for UYV dioxovanadium to be convertedmore » into a more biologically reactive species; 3) at steady state the upper and lower gastrointestinal tracts contain at least 10- and 100-fold more mass of vanadium, respectively, than does blood. No statistically significant differences in transport rate constants were found between animals receiving 0 and 200 ppm supplemental dietary vanadium. The availability of a model will enable the refinement of future studies regarding vanadium metabolism in the ruminant.« less

Cottonseed meal, dehydrated grass and ascorbic acid as dietary factors preventing toxicity of vanadium for the chick

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berg, L.R.; Lawrence, W.W.

1971-01-01

Studies have been conducted which show that the replacement of 5% sucrose in a sucrose-fish meal diet for chicks with degossypolized cottonseed meal prevents the toxicity of 20 ppm added vanadium. The addition of 5% dehydrated grass to the same ration markedly reduced the toxicity symptoms. No such reduction in vanadium toxicity resulted when soybean meal, corn gluten meal, meat meal, fish meal, casein, isolated soybean protein, zein or wheat gluten were added to the ration. No evidence was found that the gossypol remaining in the cottonseed meal was the detoxifying agent. The addition of 0.25 to 0.50% ascorbic acidmore » to the sucrose-fish meal basal ration prevented the toxic symptoms resulting from the addition of 20 ppm vanadium derived from HN/sub 4/VO/sub 3/. The vanadium derived from VOSO/sub 4/ and VOCl/sub 2/ (vanadium valence 4) was as toxic as vanadium derived from HN/sub 4/VO/sub 3/ (V = valence 5). This leads one to question that the action of ascorbic acid in reducing vanadium toxicity is through its property of a reducing agent which might change the vanadium in VH/sub 4/VO/sub 3/ to a lower valence, presumably less toxic.« less

Vanadium bioavailability and toxicity to soil microorganisms and plants.

PubMed

Larsson, Maja A; Baken, Stijn; Gustafsson, Jon Petter; Hadialhejazi, Golshid; Smolders, Erik

2013-10-01

Vanadium, V, is a redox-sensitive metal that in solution, under aerobic conditions, prevails as the oxyanion vanadate(V). There is little known regarding vanadium toxicity to soil biota, and the present study was set up to determine the toxicity of added vanadate to soil organisms and to investigate the relationship between toxicity and vanadium sorption in soils. Five soils with contrasting properties were spiked with 7 different doses (3.2-3200 mg V kg(-1)) of dissolved vanadate, and toxicity was measured with 2 microbial and 3 plant assays. The median effective concentration (EC50) thresholds of the microbial assays ranged from 28 mg added V kg(-1) to 690 mg added V kg(-1), and the EC50s in the plant assays ranged from 18 mg added V kg(-1) to 510 mg added V kg(-1). The lower thresholds were in the concentration range of the background vanadium in the untreated control soils (15-58 mg V kg(-1)). The vanadium toxicity to plants decreased with a stronger soil vanadium sorption strength. The EC50 values for plants expressed on a soil solution basis ranged from 0.8 mg V L(-1) to 15 mg V L(-1) and were less variable among soils than corresponding values based on total vanadium in soil. It is concluded that sorption decreases the toxicity of added vanadate and that soil solution vanadium is a more robust measure to determine critical vanadium concentrations across soils. © 2013 SETAC.

Deposition of tetracene thin films on SiO2/Si substrates by rapid expansion of supercritical solutions using carbon dioxide

NASA Astrophysics Data System (ADS)

Fujii, Tatsuya; Takahashi, Yuta; Uchida, Hirohisa

2015-03-01

We report on a novel deposition technique of tetracene (naphthacene) thin films on SiO2/Si substrates by rapid expansion of supercritical solutions (RESS) using CO2. Optical microscopy and scanning electron microscopy show that the thin films consist of a high density of submicron-sized grains. The growth mode of the grains followed the Volmer-Weber mode. X-ray diffraction shows that the thin films have regularly arranged structures in both the horizontal and vertical directions of the substrate. A fabricated top-contacted organic thin-film transistor with the tetracene active layer showed p-type transistor characteristics with a field-effect mobility of 5.1 × 10-4 cm2 V-1 s-1.

Gas sensing properties of very thin TiO2 films prepared by atomic layer deposition (ALD)

NASA Astrophysics Data System (ADS)

Boyadjiev, S.; Georgieva, V.; Vergov, L.; Baji, Zs; Gáber, F.; Szilágyi, I. M.

2014-11-01

Very thin titanium dioxide (TiO2) films of less than 10 nm were deposited by atomic layer deposition (ALD) in order to study their gas sensing properties. Applying the quartz crystal microbalance (QCM) method, prototype structures with the TiO2 ALD deposited thin films were tested for sensitivity to NO2. Although being very thin, the films were sensitive at room temperature and could register low concentrations as 50-100 ppm. The sorption is fully reversible and the films seem to be capable to detect for long term. These initial results for very thin ALD deposited TiO2 films give a promising approach for producing gas sensors working at room temperature on a fast, simple and cost-effective technology.

Vanadium exposure-induced striatal learning and memory alterations in rats

PubMed Central

Sun, Liping; Wang, Keyue; Li, Yan; Fan, Qiyuan; Zheng, Wei; Li, Hong

2017-01-01

Occupational and environmental exposure to vanadium has been associated with toxicities in reproductive, respiratory, and cardiovascular systems. The knowledge on whether and how vanadium exposure caused neurobehavioral changes remains incomplete. This study was designed to investigate the changes in learning and memory following drinking water exposure to vanadium, and to conduct the preliminary study on underlying mechanisms. Male Sprague-Dawley rats were exposed to vanadium dissolved in drinking water at the concentration of 0.0, 0.5, 1.0 and 2.0 g/L, as the control, low-, medium-, and high- dose groups, respectively, for 12 weeks. The results by the Morris water maze test showed that the time for the testing animal to find the platform in the high exposed group was increased by 82.9% and 49.7%, as compared to animals in control and low-dose groups (p <0.05). There were significantly fewer rats in the medium- and high- dose groups than in the control group who were capable of crossing the platform (p <0.05). Quantitation of vanadium by atomic absorption spectrophotometry revealed a significant dose-dependent accumulation of vanadium in striatum (r = 0.931, p <0.01). Histopathological examination further demonstrated a degenerative damage in vanadium-exposed striatum. Interestingly, with the increase of the dose of vanadium, the contents of neurotransmitter ACh, 5-HT and GABA in the striatum increased; however, the levels of Syn1 was significantly reduced in the exposed groups compared with controls (p <0.05). These data suggest that vanadium exposure apparently reduces the animals’ learning ability. This could be due partly to vanadium’s accumulation in striatum and the ensuing toxicity to striatal structure and synaptic plasticity. Further research is warranted for mechanistic understanding of vanadium-induced neurotoxicity. PMID:28625925

Influence of vanadium on serum lipid and lipoprotein profiles: a population-based study among vanadium exposed workers

PubMed Central

2014-01-01

Background Some experimental animal studies reported that vanadium had beneficial effects on blood total cholesterol (TC) and triglyceride (TG). However, the relationship between vanadium exposure and lipid, lipoprotein profiles in human subjects remains uncertain. This study aimed to compare the serum lipid and lipoprotein profiles of occupational vanadium exposed and non-exposed workers, and to provide human evidence on serum lipid, lipoprotein profiles and atherogenic indexes changes in relation to vanadium exposure. Methods This cross-sectional study recruited 533 vanadium exposed workers and 241 non-exposed workers from a Steel and Iron Group in Sichuan, China. Demographic characteristics and occupational information were collected through questionnaires. Serum lipid and lipoprotein levels were measured for all participants. The ratios of total cholesterol to high-density lipoprotein cholesterol (HDL-C), low-density lipoprotein cholesterol (LDL-C) to HDL-C and apoB to apoA-I were used as atherogenic indexes. A general linear model was applied to compare outcomes of the two groups while controlling possible confounders and multivariate logistic regression was performed to evaluate the relationship between low HDL-C level, abnormal atherogenic index and vanadium exposure. Results Higher levels of HDL-C and apoA-I could be observed in the vanadium exposed group compared with the control group (P < 0.05). Furthermore, atherogenic indexes (TC/HDL-C, LDL-C/HDL-C, and apoB/apoA-I ratios) were found statistically lower in the vanadium exposed workers (P < 0.05). Changes in HDL-C, TC/HDL-C, and LDL-C/HDL-C were more pronounced in male workers than that in female workers. In male workers, after adjusting for potential confounding variables as age, habits of smoking and drinking, occupational vanadium exposure was still associated with lower HDL-C (OR 0.41; 95% CI, 0.27-0.62) and abnormal atherogenic index (OR 0.38; 95% CI, 0.20-0.70). Conclusion Occupational vanadium exposure appears to be associated with increased HDL-C and apoA-I levels and decreased atherogenic indexes. Among male workers, a significantly negative association existed between low HDL-C level, abnormal atherogenic index and occupational vanadium exposure. This suggests vanadium has beneficial effects on blood levels of HDL-C and apoA-I. PMID:24558984

Surface and microstructural properties of photocatalytic cements for pavement applications.

DOT National Transportation Integrated Search

2016-10-01

Thin concrete inlays incorporating flowable fibrous concrete (FFC) mix designs as well as titanium dioxide (TiO2)- containing photocatalytic cements are a promising pavement preservation solution. These multi-functional inlays offer enhanced construc...

Ion assisted deposition of SiO2 film from silicon

NASA Astrophysics Data System (ADS)

Pham, Tuan. H.; Dang, Cu. X.

2005-09-01

Silicon dioxide, SiO2, is one of the preferred low index materials for optical thin film technology. It is often deposited by electron beam evaporation source with less porosity and scattering, relatively durable and can have a good laser damage threshold. Beside these advantages the deposition of critical optical thin film stacks with silicon dioxide from an E-gun was severely limited by the stability of the evaporation pattern or angular distribution of the material. The even surface of SiO2 granules in crucible will tend to develop into groove and become deeper with the evaporation process. As the results, angular distribution of the evaporation vapor changes in non-predicted manner. This report presents our experiments to apply Ion Assisted Deposition process to evaporate silicon in a molten liquid form. By choosing appropriate process parameters we can get SiO2 film with good and stable property.

40 CFR 421.223 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2011 CFR

2011-07-01

... molybdenum plus vanadium plus pure grade molybdenum produced Arsenic 27.120 12.097 Chromium 7.219 2.927 Lead...) Vanadium decomposition wet air pollution control. BAT Limitations for the Secondary Molybdenum and Vanadium... per million pounds) of vanadium produced by decomposition Arsenic 0.000 0.000 Chromium 0.000 0.000...

40 CFR 421.223 - Effluent limitations guidelines representing the degree of effluent reduction attainable by the...

Code of Federal Regulations, 2010 CFR

2010-07-01

... molybdenum plus vanadium plus pure grade molybdenum produced Arsenic 27.120 12.097 Chromium 7.219 2.927 Lead...) Vanadium decomposition wet air pollution control. BAT Limitations for the Secondary Molybdenum and Vanadium... per million pounds) of vanadium produced by decomposition Arsenic 0.000 0.000 Chromium 0.000 0.000...

ION EXCHANGE PROCESS FOR THE RECOVERY AND PURIFICATION OF MATERIALS

DOEpatents

Long, R.S.; Bailes, R.H.

1958-04-15

A process for the recovery of certain metallic ions from aqueous solutions by ion exchange techniques is described. It is applicable to elements such as vanadium, chromium, nnanganese, and the like, which are capable of forming lower valent cations soluble in aqueous solutions and which also form ldgher valent anions soluble in aqueous acidic solutions. For example, small amounts of vanadium occurring in phosphoric acid prepared from phosphate rock may be recovered by reducing the vanadium to a trivalent cation adsorbing; the vanadium in a cationic exchange resin, then treating the resin with a suitable oxidizing agent to convert the adsorbed vanadium to a higher valent state, and finally eluting; the vanadium as an anion from the resin by means of an aqueous acidic solution.

A well-defined terminal vanadium(III) oxo complex.

PubMed

King, Amanda E; Nippe, Michael; Atanasov, Mihail; Chantarojsiri, Teera; Wray, Curtis A; Bill, Eckhard; Neese, Frank; Long, Jeffrey R; Chang, Christopher J

2014-11-03

The ubiquity of vanadium oxo complexes in the V+ and IV+ oxidation states has contributed to a comprehensive understanding of their electronic structure and reactivity. However, despite being predicted to be stable by ligand-field theory, the isolation and characterization of a well-defined terminal mononuclear vanadium(III) oxo complex has remained elusive. We present the synthesis and characterization of a unique terminal mononuclear vanadium(III) oxo species supported by the pentadentate polypyridyl ligand 2,6-bis[1,1-bis(2-pyridyl)ethyl]pyridine (PY5Me2). Exposure of [V(II)(NCCH3)(PY5Me2)](2+) (1) to either dioxygen or selected O-atom-transfer reagents yields [V(IV)(O)(PY5Me2)](2+) (2). The metal-centered one-electron reduction of this vanadium(IV) oxo complex furnishes a stable, diamagnetic [V(III)(O)(PY5Me2)](+) (3) species. The vanadium(III) oxo species is unreactive toward H- and O-atom transfer but readily reacts with protons to form a putative vanadium hydroxo complex. Computational results predict that further one-electron reduction of the vanadium(III) oxo species will result in ligand-based reduction, even though pyridine is generally considered to be a poor π-accepting ligand. These results have implications for future efforts toward low-valent vanadyl chemistry, particularly with regard to the isolation and study of formal vanadium(II) oxo species.

A combined theoretical-experimental study of interactions between vanadium ions and Nafion membrane in all-vanadium redox flow batteries

NASA Astrophysics Data System (ADS)

Intan, Nadia N.; Klyukin, Konstantin; Zimudzi, Tawanda J.; Hickner, Michael A.; Alexandrov, Vitaly

2018-01-01

Vanadium redox flow batteries (VRFBs) are a promising solution for large-scale energy storage, but a number of problems still impede the deployment of long-lifetime VRFBs. One important aspect of efficient operation of VRFBs is understanding interactions between vanadium species and the membrane. Herein, we investigate the interactions between all four vanadium cations and Nafion membrane by a combination of infrared (IR) spectroscopy and density-functional-theory (DFT)-based static and molecular dynamics simulations. It is observed that vanadium species primarily lead to changes in the IR spectrum of Nafion in the SO3- spectral region which is attributed to the interaction between vanadium species and the SO3- exchange sites. DFT calculations of vanadium -Nafion complexes in the gas phase show that it is thermodynamically favorable for all vanadium cations to bind to SO3- via a contact pair mechanism. Car-Parrinello molecular dynamics-based metadynamics simulations of cation-Nafion systems in aqueous solution suggest that V2+ and V3+ species coordinate spontaneously to SO3-, which is not the case for VO2+ and VO2+ . The interaction behavior of the uncycled membrane determined in this study is used to explain the experimentally observed changes in the vibrational spectra, and is discussed in light of previous results on device-cycled membranes.

Thermally switchable meta-material absorber involving vanadium dioxide semiconductor-metal transition for thermo photovoltaic conversion

NASA Astrophysics Data System (ADS)

Bendelala, Fathi; Cheknane, Ali; Hilal, Hikmat S.

2018-01-01

A new switchable absorber design using meta-materials for thermo photovoltaic applications is proposed here. Conventional absorbents are normally non-adjustable with narrow band-widths and polarization-dependence. The present study describes an alternative infrared absorber structure with tunable characteristics. The absorber is based on VO2 which exhibits transition from semiconductor to metallic conductor by thermal effect. With this design, the results show that wide-band absorption can be achieved. The absorption bandwidth can be improved from 15.94 to 36.75 THz. With 40.42% relative shift in the peak frequency, a maximum absorption efficiency of 99% can be achieved. This structure design is polarization-independent of normal incident radiations, and may accommodate radiations from wide oblique angles. These new features make the new thermally adjustable absorber potentially useful in thermo-photovoltaic conversion devices.

Preparation and enhanced infrared response properties of ordered W-doped VO2 nanowire array

NASA Astrophysics Data System (ADS)

Xie, Bing He; Fu, Wen Biao; Fei, Guang Tao; Xu, Shao Hui; Gao, Xu Dong; Zhang, Li De

2018-04-01

In this article, pure and tungsten-doped (W-doped) highly ordered two-dimensional (2D) vanadium dioxide (VO2) nanowire arrays were successfully prepared by a hydrothermal treatment, followed by a self-assembly progress and the in-situ high temperature treatment. The infrared photodetector devices based on monoclinic VO2 (VO2(M)) and W-doped VO2(M) nanowires were comparatively studied . It was found that the device based on W-doped VO2(M) nanowires exhibits a rapid infrared response and an enhanced photoelectric responsivity of 21.4 mA/W under the incident infrared light intensity of 280 mW/cm2, which is nearly two orders of magnitude superior to pure VO2(M) nanowire array. Our experimental results provided a direct and convenient path for design of future high-performance photodetector devices.

Determination of total sulfur in lichens and plants by combustion-infrared analysis

USGS Publications Warehouse

Jackson, L.L.; Engleman, E.E.; Peard, J.L.

1985-01-01

Sulfur was determined in plants and lichens by combustion of the sample and infrared detection of evolved sulfur dioxide using an automated sulfur analyzer. Vanadium pentaoxide was used as a combustion accelerator. Pelletization of the sample prior to combustion was not found to be advantageous. Washing studies showed that leaching of sulfur was not a major factor in the sample preparation. The combustion-IR analysis usually gave higher sulfur content than the turbidimetric analysis as well as shorter analysis time. Relative standard deviations of less than 7% were obtained by the combustion-IR technique when sulfur levels in plant material ranged from 0.05 to 0.70%. Determination of sulfur in National Bureau of Standards botanical reference materials showed good agreement between the combustion-IR technique and other instrumental procedures. Seven NBS botanical reference materials were analyzed.

Passive Q switching and mode-locking of Er:glass lasers using VO2 mirrors

NASA Astrophysics Data System (ADS)

Pollack, S. A.; Chang, D. B.; Chudnovky, F. A.; Khakhaev, I. A.

1995-09-01

Passive Q switching of an Er:glass laser with the pulse width varying between 14 and 80 ns has been demonstrated, using three resonator vanadium-dioxide-coated (VO2) mirror samples with temperature-dependent reflectivity and differing in the reflectivity contrast. The reflectivity changes because of a phase transition from a semiconductor to a metallic state. Broad band operating characteristics of VO2 mirrors provide Q switching over a wide range of wavelengths. In addition, mode-locked pulses with much shorter time scales have been observed, due to exciton formation and recombination. A simple criterion is derived for the allowable ambient temperatures at which the Q switching operates effectively. A simple relation has also been found relating the duration of the Q-switched pulse to the contrast in reflectivities of the two mirror phases.

Boron-tuning transition temperature of vanadium dioxide from rutile to monoclinic phase

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, J. J.; He, H. Y.; Xie, Y.

2014-11-21

The effect of the doped boron on the phase transition temperature between the monoclinic phase and the rutile phase of VO{sub 2} has been studied by performing first-principles calculations. It is found that the phase transition temperature decreases linearly with increasing the doping level of B in each system, no matter where the B atom is in the crystal. More importantly, the descent of the transition temperature is predicted to be as large as 83 K/at. % B, indicating that the boron concentration of only 0.5% can cause the phase transition at room temperature. These findings provide a new routinemore » of modulating the phase transition of VO{sub 2} and pave a way for the practicality of VO{sub 2} as an energy-efficient green material.« less

Hydrothermal growth of VO2 nanoplate thermochromic films on glass with high visible transmittance

PubMed Central

Zhang, Jiasong; Li, Jingbo; Chen, Pengwan; Rehman, Fida; Jiang, Yijie; Cao, Maosheng; Zhao, Yongjie; Jin, Haibo

2016-01-01

The preparation of thermochromic vanadium dioxide (VO2) films in an economical way is of interest to realizing the application of smart windows. Here, we reported a successful preparation of self-assembly VO2 nanoplate films on TiO2-buffered glass by a facile hydrothermal process. The VO2 films composed of triangle-shaped plates standing on substrates exhibit a self-generated porous structure, which favors the transmission of solar light. The porosity of films is easily controlled by changing the concentration of precursor solutions. Excellent thermochromic properties are observed with visible light transmittance as high as 70.3% and solar modulating efficiency up to 9.3% in a VO2 film with porosity of ~35.9%. This work demonstrates a promising technique to promote the commercial utilization of VO2 in smart windows. PMID:27296772

Thermogravimetric feasibility study of argon purification using powders of titanium alloys with molybdenum and vanadium

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eremeev, A.P.; Veselovskii, P.F.

1987-10-20

The high adsorption and chemical activity of titanium alloy powders (TiMo > TiV) having specific size and chemical compositions, and the nature of the surface and its specific energy characteristics permit one to use them effectively for the purification of argon and other inert gases from impurities such as water vapor, carbon dioxide gas, oxygen, and nitrogen. In agreement with the developed activity series the irreversible adsorption of impurities (1 vol. %) by the indicated powders can be controlled using powders or filters pressed from these powders by heating to temperatures of 500-700/sup 0/. The thickness of the filters canmore » be established on the basis of the rate constants of the chemical reactions of the impurities with the TiMo and TiV powders obtained in this study.« less

Effects of switching to lower sulfur marine fuel oil on air quality in the San Francisco Bay area.

PubMed

Tao, Ling; Fairley, David; Kleeman, Michael J; Harley, Robert A

2013-09-17

Ocean-going vessels burning high-sulfur heavy fuel oil are an important source of air pollutants, such as sulfur dioxide and particulate matter. Beginning in July 2009, an emission control area was put into effect at ports and along the California coastline, requiring use of lower sulfur fuels in place of heavy fuel oil in main engines of ships. To assess impacts of the fuel changes on air quality at the Port of Oakland and in the surrounding San Francisco Bay area, we analyzed speciated fine particle concentration data from four urban sites and two more remote sites. Measured changes in concentrations of vanadium, a specific marker for heavy fuel oil combustion, are related to overall changes in aerosol emissions from ships. We found a substantial reduction in vanadium concentrations after the fuel change and a 28-72% decrease in SO2 concentrations, with the SO2 decrease varying depending on proximity to shipping lanes. We estimate that the changes in ship fuel reduced ambient PM2.5 mass concentrations at urban sites in the Bay area by about 3.1 ± 0.6% or 0.28 ± 0.05 μg/m(3). The largest contributing factor to lower PM mass concentrations was reductions in particulate sulfate. Absolute sulfate reductions were fairly consistent across sites, whereas trace metal reductions were largest at a monitoring site in West Oakland near the port.

A method for recovery of iron, titanium, and vanadium from vanadium-bearing titanomagnetite

NASA Astrophysics Data System (ADS)

Zhang, Yi-min; Wang, Li-na; Chen, De-sheng; Wang, Wei-jing; Liu, Ya-hui; Zhao, Hong-xin; Qi, Tao

2018-02-01

An innovative method for recovering valuable elements from vanadium-bearing titanomagnetite is proposed. This method involves two procedures: low-temperature roasting of vanadium-bearing titanomagnetite and water leaching of roasting slag. During the roasting process, the reduction of iron oxides to metallic iron, the sodium oxidation of vanadium oxides to water-soluble sodium vanadate, and the smelting separation of metallic iron and slag were accomplished simultaneously. Optimal roasting conditions for iron/slag separation were achieved with a mixture thickness of 42.5 mm, a roasting temperature of 1200°C, a residence time of 2 h, a molar ratio of C/O of 1.7, and a sodium carbonate addition of 70wt%, as well as with the use of anthracite as a reductant. Under the optimal conditions, 93.67% iron from the raw ore was recovered in the form of iron nugget with 95.44% iron grade. After a water leaching process, 85.61% of the vanadium from the roasting slag was leached, confirming the sodium oxidation of most of the vanadium oxides to water-soluble sodium vanadate during the roasting process. The total recoveries of iron, vanadium, and titanium were 93.67%, 72.68%, and 99.72%, respectively.

Enrichment, Distribution of Vanadium-Containing Protein in Vanadium-Enriched Sea Cucumber Apostichopus japonicus and the Ameliorative Effect on Insulin Resistance.

PubMed

Liu, Yanjun; Zhou, Qingxin; Zhao, Yanlei; Wang, Yiming; Wang, Yuming; Wang, Jingfeng; Xu, Jie; Xue, Changhu

2016-05-01

Sea cucumbers are a potential source of natural organic vanadium that may improve insulin resistance. In this work, vanadium was accumulated rapidly in blood, body wall, and intestine by sea cucumber Apostichopus japonicus. Furthermore, water-soluble vanadium-containing proteins, the main form of the organic vanadium, were tentatively accumulated and isolated by a bioaccumulation experiment. It was also designed to evaluate the beneficial effect of vanadium-containing proteins (VCPs) from sea cucumber rich in vanadium on the development of hyperglycemia and insulin resistance in C57BL/6J mice fed with a high-fat high-sucrose diet (HFSD). HFSD mice treated with VCPs significantly decreased fasting blood glucose, serum insulin, and HOMA-IR values as compared to HFSD mice, respectively. Serum adiponectin, resistin, TNF-α, and leptin levels in insulin-resistant mice were dramatically reduced by a VCP supplement. These results show an ameliorative effect on insulin resistance by treatment with VCPs. Such compound seems to be a valuable therapy to achieve and/or maintain glycemic control and therapeutic agents in the treatment arsenal for insulin resistance and type 2 diabetes.

Comparison of bioavailable vanadium in alfalfa rhizosphere soil extracted by an improved BCR procedure and EDTA, HCl, and NaNO₃ single extractions in a pot experiment with V-Cd treatments.

PubMed

Yang, Jie; Teng, Yanguo; Zuo, Rui; Song, Liuting

2015-06-01

The BCR sequential extraction procedure was compared with EDTA, HCl, and NaNO3 single extractions for evaluating vanadium bioavailability in alfalfa rhizosphere soil. The amounts of vanadium extracted by these methods were in the following order: BCR (bioavailable V) > EDTA ≈ HCl > NaNO3. Both correlation analysis and stepwise regression were adopted to illustrate the extractable vanadium between different reagents. The correlation coefficients between extracted vanadium and the vanadium contents in alfalfa roots were R NaNO3 = 0.948, R HCl = 0.902, R EDTA = 0.816, and R bioavailable V = 0.819. The stepwise multiple regression equation of the NaNO3 extraction was the most significant at a 95 % confidence interval. The influence of pH, total organic carbon, and cadmium content of soil to vanadium bioavailability were not definite. In summary, both the BCR sequential extraction and the single extraction methods were valid approaches for predicting vanadium bioavailability in alfalfa rhizosphere soil, especially the single extractions.

Development of a prototype regenerable carbon dioxide absorber for portable life support systems. [for astronaut EVA

NASA Technical Reports Server (NTRS)

Onischak, M.; Baker, B.

1977-01-01

The design and development of a prototype carbon dioxide absorber using potassium carbonate (K2CO3) is described. Absorbers are constructed of thin, porous sheets of supported K2CO3 that are spirally wound to form a cylindrical reactor. Axial gas passages are formed between the porous sheets by corrugated screen material. Carbon dioxide and water in an enclosed life support system atmosphere react with potassium carbonate to form potassium bicarbonate. The potassium carbonate is regenerated by heating the potassium bicarbonate to 150 C at ambient pressure. The extravehicular mission design conditions are for one man for 8 h. Results are shown for a subunit test module investigating the effects of heat release, length-to-diameter ratio, and active cooling upon performance. The most important effect upon carbon dioxide removal is the temperature of the potassium carbonate.

Extraction of Vanadium from Vanadium Slag Via Non-salt Roasting and Ammonium Oxalate Leaching

NASA Astrophysics Data System (ADS)

Li, Meng; Du, Hao; Zheng, Shili; Wang, Shaona; Zhang, Yang; Liu, Biao; Dreisinger, David Bruce; Zhang, Yi

2017-10-01

A clean method featuring non-salt roasting followed by (NH4)2C2O4 leaching to recover vanadium from vanadium slag was proposed. The carcinogenic Cr6+ compounds and exhaust gases were avoided, and the water generated from vanadate precipitation may be recycled and reused in this new leaching process. The leaching residues may be easily used by a blast furnace. Moreover, (NH4)2C2O4 solution was used as a leaching medium to avoid expensive and complicated ammonium controlling operations as a result of the stability of (NH4)2C2O4 at a high temperature. The transformation mechanisms of vanadium- and chromium-bearing phases were systematically investigated by x-ray diffraction analysis and scanning electron microscopy with energy-disperse x-ray spectrometry, respectively. In addition, the effects of oxygen concentration, roasting temperature, and holding time on vanadium recovery were investigated. Finally, the effects of leaching variables on the vanadium leaching rate were also examined.

Theoretical analysis and experiments for the carburization of vanadium-bearing hot metal

NASA Astrophysics Data System (ADS)

Ma, Deng; Wu, Wei; Dai, Shifan; Liu, Zhibin

2018-01-01

In this study, the feasibility of the carburization of vanadium-bearing hot metal was first investigated by thermodynamic analysis. Next, three carburizers, namely a low-nitrogen carburizer, anthracite, and coke, were used for carburization of 500 g of vanadium-bearing hot metal at 1450 °C, 1500 °C, and 1550 °C, respectively. The carbon increments for the low-nitrogen carburizer, anthracite and coke followed decreasing order in the temperature range from 1450 °C to 1550 °C. Anthracite was the most cost-effective carburizer. Hence, anthracite is used in pilot-scale experiments of the vanadium-bearing hot metal (100 kg and 200 kg). Finally, vanadium extraction experiments of the vanadium-bearing hot metal were carried out in a top-bottom-combined blowing induction furnace. It is proved that the average superheat degree of semi-steel increases from 100 °C to 198 °C by the carburization of vanadium-containing hot metal. Foundation Item: Item Sponsored by National Science Foundation of China (51674092)

Vanadium-Binding Ability of Nucleoside Diphosphate Kinase from the Vanadium-Rich Fan Worm, Pseudopotamilla occelata.

PubMed

Yamaguchi, Nobuo; Yoshinaga, Masafumi; Kamino, Kei; Ueki, Tatsuya

2016-06-01

Polychaete fan worms and ascidians accumulate high levels of vanadium ions. Several vanadiumbinding proteins, known as vanabins, have been found in ascidians. However, no vanadium-binding factors have been isolated from the fan worm. In the present study, we sought to identify vanadiumbinding proteins in the branchial crown of the fan worm using immobilized metal ion affinity chromatography. A nucleoside diphosphate kinase (NDK) homolog was isolated and determined to be a vanadium-binding protein. Kinase activity of the NDK homologue, PoNDK, was suppressed by the addition of V(IV), but was unaffected by V(V). The effect of V(IV) on PoNDK precedes its activation by Mg(II). This is the first report to describe the relationship between NDK and V(IV). PoNDK is located in the epidermis of the branchial crown, and its distribution is very similar to that of vanadium. These results suggest that PoNDK is associated with vanadium accumulation and metabolism in P. occelata.