Boron carbide coating deposition on tungsten and testing of tungsten layers and coating under intense plasma load

DOE Office of Scientific and Technical Information (OSTI.GOV)

Airapetov, A. A.; Begrambekov, L. B., E-mail: lbb@plasma.mephi.ru; Buzhinskiy, O. I.

2015-12-15

A device intended for boron carbide coating deposition and material testing under high heat loads is presented. A boron carbide coating 5 μm thick was deposited on the tungsten substrate. These samples were subjected to thermocycling loads in the temperature range of 400–1500°C. Tungsten layers deposited on tungsten substrates were tested in similar conditions. Results of the surface analysis are presented.

Deposition of tungsten metal by an immersion process

DOE PAGES

Small, Leo J.; Brumbach, Michael T.; Clem, Paul G.; ...

2017-03-23

A new multi-step, solution-phase method for the spontaneous deposition of tungsten from a room temperature ethereal solution is reported. This immersion process relies on the deposition of a sacrificial zinc coating which is galvanically displaced by the ether-mediated reduction of oxophilic WCl 6. Subsequent thermal treatment renders a crystalline, metallic tungsten film. The chemical evolution of the surface and formation of a complex intermediate tungsten species is characterized by X-ray diffraction, infrared spectroscopy, and X-ray photoelectron spectroscopy. Efficient metallic tungsten deposition is first characterized on a graphite substrate and then demonstrated on a functional carbon foam electrode. The resulting electrochemicalmore » performance of the modified electrode is interrogated with the canonical aqueous ferricyanide system. A tungsten-coated carbon foam electrode showed that both electrode resistance and overall electrochemical cell resistance were reduced by 50%, resulting in a concomitant decrease in redox peak separation from 1.902 V to 0.783 V. Furthermore, this process promises voltage efficiency gains in electrodes for energy storage technologies and demonstrates the viability of a new route to tungsten coating for technologies and industries where high conductivity and chemical stability are paramount.« less

Weldability, strength, and high temperature stability of chemically vapor deposited tungsten

NASA Technical Reports Server (NTRS)

Bryant, W. A.

1972-01-01

Three types of CVD tungsten (fluoride-produced, chloride-produced and the combination of the two which is termed duplex) were evaluated to determine their weldability, high temperature strength and structural stability during 5000 hour exposure to temperatures of 1540 C and 1700 C. Each type of CVD tungsten could be successfully electron beam welded but the results for the chloride product were not as satisfactory as those of the other two materials. The high temperature strength behavior of the three materials did not differ greatly. However a large difference was noted for the grain growth behavior of the two basic CVD tungsten materials. Fluoride tungsten was found to be relatively stable while for the most part the grain size of chloride tungsten increased appreciably. The examination of freshly fractured surfaces with a scanning electron microscope revealed numerous bubbles in the fluoride material following its exposure to 1700 C for 5000 hours. Less severe thermal treatments produced relatively few bubbles in this material. Only at certain locations within the chloride material associated with the interruption of tungsten were bubbles noted.

Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengdi, E-mail: M.Yang@utwente.nl; Aarnink, Antonius A. I.; Kovalgin, Alexey Y.

2016-01-15

In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecularmore » or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.« less

Granite-related Yangjiashan tungsten deposit, southern China

NASA Astrophysics Data System (ADS)

Xie, Guiqing; Mao, Jingwen; Li, Wei; Fu, Bin; Zhang, Zhiyuan

2018-04-01

The Yangjiashan scheelite-bearing deposit (38,663 metric tons of WO3 with an average ore grade of 0.70% WO3) is hosted in quartz veins in a biotite monzogranite intrusion and surrounding slate in the Xiangzhong Metallogenic Province of southern China. The monzogranite has a zircon SHRIMP U-Pb age of 406.6 ± 2.8 Ma (2σ, n = 20, MSWD = 1.4). Cassiterite coexisting with scheelite yields a weighted mean 206Pb/238U age of 409.8 ± 5.9 Ma (2σ, n = 30, MSWD = 0.20), and molybdenite intergrown with scheelite yields a weighted mean Re-Os age of 404.2 ± 3.2 Ma (2σ, n = 3, MSWD = 0.10). These results suggest that the Yangjiashan tungsten deposit is temporally related to the Devonian intrusion. The δD and calculated δ18OH2O values of quartz intergrown with scheelite range from - 87 to - 68‰, and - 1.2 to 3.4‰, respectively. Sulfides have a narrow range of δ34S values of - 2.9 to - 0.7‰ with an average value of - 1.6‰ (n = 16). The integration of geological, stable isotope, and geochronological data, combined with the quartz-muscovite greisen style of ore, supports a magmatic-hydrothermal origin for the tungsten mineralization. Compared to the more common tungsten skarn, quartz-wolframite vein, and porphyry tungsten deposits, as well as orogenic gold deposits worldwide, the Yangjiashan tungsten deposit is an unusual example of a granite-related, gold-poor, scheelite-bearing quartz vein type of deposit. The calcium needed for the formation of scheelite is derived from the sericitization of calcic plagioclase in the monzogranite and Ca-bearing psammitic country rocks, and the relatively high pH, reduced and Ca-rich mineralizing fluid may be the main reasons for the formation of scheelite rather than wolframite at Yangjiashan.

Role of Co-Vapors in Vapor Deposition Polymerization

PubMed Central

Lee, Ji Eun; Lee, Younghee; Ahn, Ki-Jin; Huh, Jinyoung; Shim, Hyeon Woo; Sampath, Gayathri; Im, Won Bin; Huh, Yang–Il; Yoon, Hyeonseok

2015-01-01

Polypyrrole (PPy)/cellulose (PPCL) composite papers were fabricated by vapor phase polymerization. Importantly, the vapor-phase deposition of PPy onto cellulose was assisted by employing different co-vapors namely methanol, ethanol, benzene, water, toluene and hexane, in addition to pyrrole. The resulting PPCL papers possessed high mechanical flexibility, large surface-to-volume ratio, and good redox properties. Their main properties were highly influenced by the nature of the co-vaporized solvent. The morphology and oxidation level of deposited PPy were tuned by employing co-vapors during the polymerization, which in turn led to change in the electrochemical properties of the PPCL papers. When methanol and ethanol were used as co-vapors, the conductivities of PPCL papers were found to have improved five times, which was likely due to the enhanced orientation of PPy chain by the polar co-vapors with high dipole moment. The specific capacitance of PPCL papers obtained using benzene, toluene, water and hexane co-vapors was higher than those of the others, which is attributed to the enlarged effective surface area of the electrode material. The results indicate that the judicious choice and combination of co-vapors in vapor-deposition polymerization (VDP) offers the possibility of tuning the morphological, electrical, and electrochemical properties of deposited conducting polymers. PMID:25673422

Laboratory studies of silicon vapor deposition, phase A. [feasibility of producing thin films for photovoltaic applications

NASA Technical Reports Server (NTRS)

Frost, R. T.; Racette, G. W.; Stockhoff, E. H.

1977-01-01

A system is described capable of carrying out silicon vapor deposition experiments in the low 10 to the minus 10th power torr vacuum range. The system was assembled and tested for use in a program aimed at exploration of vacuum heteroepitaxy of silicon on several substrates of potential interest for photovoltaic applications. An experiment is described in which a silicon layer 2.5 microns thick was deposited on a pyrolytically cleaned tungsten substrate held at a temperature of 400 C. Using a resistance heated silicon source, thicker layers can be deposited in periods of hours by utilizing closer source to substrate distances.

Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

NASA Astrophysics Data System (ADS)

Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

2016-10-01

The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

Method for deposition of a conductor in integrated circuits

DOEpatents

Creighton, J.R.; Dominguez, F.; Johnson, A.W.; Omstead, T.R.

1997-09-02

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten. 2 figs.

Method for deposition of a conductor in integrated circuits

DOEpatents

Creighton, J. Randall; Dominguez, Frank; Johnson, A. Wayne; Omstead, Thomas R.

1997-01-01

A method is described for fabricating integrated semiconductor circuits and, more particularly, for the selective deposition of a conductor onto a substrate employing a chemical vapor deposition process. By way of example, tungsten can be selectively deposited onto a silicon substrate. At the onset of loss of selectivity of deposition of tungsten onto the silicon substrate, the deposition process is interrupted and unwanted tungsten which has deposited on a mask layer with the silicon substrate can be removed employing a halogen etchant. Thereafter, a plurality of deposition/etch back cycles can be carried out to achieve a predetermined thickness of tungsten.

Vapor deposition routes to conformal polymer thin films

PubMed Central

Moni, Priya; Al-Obeidi, Ahmed

2017-01-01

Vapor phase syntheses, including parylene chemical vapor deposition (CVD) and initiated CVD, enable the deposition of conformal polymer thin films to benefit a diverse array of applications. This short review for nanotechnologists, including those new to vapor deposition methods, covers the basic theory in designing a conformal polymer film vapor deposition, sample preparation and imaging techniques to assess film conformality, and several applications that have benefited from vapor deposited, conformal polymer thin films. PMID:28487816

Vapor Wall Deposition in Chambers: Theoretical Considerations

NASA Astrophysics Data System (ADS)

McVay, R.; Cappa, C. D.; Seinfeld, J.

2014-12-01

In order to constrain the effects of vapor wall deposition on measured secondary organic aerosol (SOA) yields in laboratory chambers, Zhang et al. (2014) varied the seed aerosol surface area in toluene oxidation and observed a clear increase in the SOA yield with increasing seed surface area. Using a coupled vapor-particle dynamics model, we examine the extent to which this increase is the result of vapor wall deposition versus kinetic limitations arising from imperfect accommodation of organic species into the particle phase. We show that a seed surface area dependence of the SOA yield is present only when condensation of vapors onto particles is kinetically limited. The existence of kinetic limitation can be predicted by comparing the characteristic timescales of gas-phase reaction, vapor wall deposition, and gas-particle equilibration. The gas-particle equilibration timescale depends on the gas-particle accommodation coefficient αp. Regardless of the extent of kinetic limitation, vapor wall deposition depresses the SOA yield from that in its absence since vapor molecules that might otherwise condense on particles deposit on the walls. To accurately extrapolate chamber-derived yields to atmospheric conditions, both vapor wall deposition and kinetic limitations must be taken into account.

Dioxo-Fluoroalkoxide Tungsten(VI) Complexes for Growth of WOx Thin Films by Aerosol-Assisted Chemical Vapor Deposition.

PubMed

Bonsu, Richard O; Kim, Hankook; O'Donohue, Christopher; Korotkov, Roman Y; Abboud, Khalil A; Anderson, Timothy J; McElwee-White, Lisa

2015-08-03

The soluble bis(fluoroalkoxide) dioxo tungsten(VI) complexes WO2(OR)2(DME) [1, R = C(CF3)2CH3; 2, R = C(CF3)3] have been synthesized by alkoxide-chloride metathesis and evaluated as precursors for aerosol-assisted chemical vapor deposition (AACVD) of WOx. The (1)H NMR and (19)F NMR spectra of 1 and 2 are consistent with an equilibrium between the dimethoxyethane (DME) complexes 1 and 2 and the solvato complexes WO2(OR)2(CD3CN)2 [1b, R = C(CF3)2CH3; 2b, R = C(CF3)3] in acetonitrile-d3 solution. Studies of the fragmentation of 1 and 2 by mass spectrometry and thermolysis resulted in observation of DME and the corresponding alcohols, with hexafluoroisobutylene also generated from 1. DFT calculations on possible decomposition mechanisms for 1 located pathways for hydrogen abstraction by a terminal oxo to form hexafluoroisobutylene, followed by dimerization of the resulting terminal hydroxide complex and dissociation of the alcohol. AACVD using 1 occurred between 100 and 550 °C and produced both substoichiometric amorphous WOx and a polycrystalline W18O49 monoclinic phase, which exhibits 1-D preferred growth in the [010] direction. The work function (4.9-5.6 eV), mean optical transmittance (39.1-91.1%), conductivity (0.4-2.3 S/cm), and surface roughness (3.4-7.9 nm) of the WOx films are suitable for charge injection layers in organic electronics.

Design and test of porous-tungsten mercury vaporizers

NASA Technical Reports Server (NTRS)

Kerslake, W. R.

1972-01-01

Future use of large size Kaufman thrusters and thruster arrays will impose new design requirements for porous plug type vaporizers. Larger flow rate coupled with smaller pores to prevent liquid intrusion will be desired. The results of testing samples of porous tungsten for flow rate, liquid intrusion pressure level, and mechanical strength are presented. Nitrogen gas was used in addition to mercury flow for approximate calibration. Liquid intrusion pressure levels will require that flight thruster systems with long feed lines have some way (a valve) to restrict dynamic line pressures during launch.

Tungsten bridge for the low energy ignition of explosive and energetic materials

DOEpatents

Benson, D.A.; Bickes, R.W. Jr.; Blewer, R.S.

1990-12-11

A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose. 2 figs.

Tungsten bridge for the low energy ignition of explosive and energetic materials

DOEpatents

Benson, David A.; Bickes, Jr., Robert W.; Blewer, Robert S.

1990-01-01

A tungsten bridge device for the low energy ignition of explosive and energetic materials is disclosed. The device is fabricated on a silicon-on-sapphire substrate which has an insulating bridge element defined therein using standard integrated circuit fabrication techniques. Then, a thin layer of tungsten is selectively deposited on the silicon bridge layer using chemical vapor deposition techniques. Finally, conductive lands are deposited on each end of the tungsten bridge layer to form the device. It has been found that this device exhibits substantially shorter ignition times than standard metal bridges and foil igniting devices. In addition, substantially less energy is required to cause ignition of the tungsten bridge device of the present invention than is required for common metal bridges and foil devices used for the same purpose.

Perspective: Highly stable vapor-deposited glasses

NASA Astrophysics Data System (ADS)

Ediger, M. D.

2017-12-01

This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the "ideal glass." Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

Perspective: Highly stable vapor-deposited glasses

DOE PAGES

Ediger, M. D.

2017-12-07

This paper describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the “ideal glass”. Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquidsmore » are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.« less

Perspective: Highly stable vapor-deposited glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ediger, M. D.

This paper describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the “ideal glass”. Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquidsmore » are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.« less

Geology and genesis of the Baid al Jimalah tungsten deposit, Kingdom of Saudi Arabia

USGS Publications Warehouse

Kamilli, R.J.; Cole, J.C.; Elliott, J.E.; Criss, R.E.

1993-01-01

The Baid ad Jimalah tungsten deposit in Saudi Arabia consists predominantly of swarms of steeply dipping, subparallel, tungsten-bearing quartz veins and of less abundant, smaller stockwork veins. It is spatially, temporally, and genetically associated with a 569 Ma, highly differentiated, porphyritic, two-feldspar granite that intrudes Late Proterozoic immature sandstones. Baid al Jimalah is similar in character and origin to Phanerozoic tungsten-tin greisen deposits throughout the world, especially the Hemerdon deposit in Devon, England. It is also analogous to Climax-type molybdenum deposits, which contain virtually identical mineral assemblages, but with the relative proportions of molybdenum and tungsten mineralization reversed, primarily owing to differences in oxygen fugacity. This similarity in mineralization styles and fluid histories indicates that metallogenic processes in granite-related deposits in the late Precambrian were similar to those seen in the Phanerozoic. -from Authors

Enhanced properties of tungsten thin films deposited with a novel HiPIMS approach

NASA Astrophysics Data System (ADS)

Velicu, Ioana-Laura; Tiron, Vasile; Porosnicu, Corneliu; Burducea, Ion; Lupu, Nicoleta; Stoian, George; Popa, Gheorghe; Munteanu, Daniel

2017-12-01

Despite the tremendous potential for industrial use of tungsten (W), very few studies have been reported so far on controlling and tailoring the properties of W thin films obtained by physical vapor deposition techniques and, even less, for those deposited by High Power Impulse Magnetron Sputtering (HiPIMS). This study presents results on the deposition process and properties characterization of nanocrystalline W thin films deposited on silicon and molybdenum substrates (100 W average sputtering power) by conventional dc magnetron sputtering (dcMS) and HiPIMS techniques. Topological, structural, mechanical and tribological properties of the deposited thin films were investigated. It was found that in HiPIMS, both deposition process and coatings properties may be optimized by using an appropriate magnetic field configuration and pulsing design. Compared to the other deposited samples, the W films grown in multi-pulse (5 × 3 μs) HiPIMS assisted by an additional magnetic field, created with a toroidal-shaped permanent magnet placed in front of the magnetron cathode, show significantly enhanced properties, such as: smoother surfaces, higher homogeneity and denser microstructure, higher hardness and Young's modulus values, better adhesion to the silicon substrate and lower coefficient of friction. Mechanical behaviour and structural changes are discussed based on plasma diagnostics results.

Preparation Of Sources For Plasma Vapor Deposition

NASA Technical Reports Server (NTRS)

Waters, William J.; Sliney, Hal; Kowalski, D.

1993-01-01

Multicomponent metal targets serving as sources of vapor for plasma vapor deposition made in modified pressureless-sintering process. By use of targets made in modified process, one coats components with materials previously plasma-sprayed or sintered but not plasma-vapor-deposited.

Genesis and evolution of the Baid al Jimalah tungsten deposit, Kingdom of Saudi Arabia

USGS Publications Warehouse

Kamilli, Robert J.

1986-01-01

Baid al Jimalah is similar in character and origin to other tungsten-tin greisen deposits in the world, especially the Hemerdon deposit in Devon, England. It is also analogous to Climax-type molybdenum deposits, which contain virtually identical mineral assemblages, but with the relative intensities of the molybdenum and tungsten mineralization reversed.

What controls deposition rate in electron-beam chemical vapor deposition?

PubMed

White, William B; Rykaczewski, Konrad; Fedorov, Andrei G

2006-08-25

The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

Vapor Deposition Rig

NASA Image and Video Library

2015-01-27

The Plasma Spray-Physical Vapor Deposition (PS-PVD) Rig at NASA Glenn Research Center. The rig helps develop coatings for next-generation aircraft turbine components and create more efficient engines.

Polycrystalline silicon on tungsten substrates

NASA Technical Reports Server (NTRS)

Bevolo, A. J.; Schmidt, F. A.; Shanks, H. R.; Campisi, G. J.

1979-01-01

Thin films of electron-beam-vaporized silicon were deposited on fine-grained tungsten substrates under a pressure of about 1 x 10 to the -10th torr. Mass spectra from a quadrupole residual-gas analyzer were used to determine the partial pressure of 13 residual gases during each processing step. During separate silicon depositions, the atomically clean substrates were maintained at various temperatures between 400 and 780 C, and deposition rates were between 20 and 630 A min. Surface contamination and interdiffusion were monitored by in situ Auger electron spectrometry before and after cleaning, deposition, and annealing. Auger depth profiling, X-ray analysis, and SEM in the topographic and channeling modes were utilized to characterize the samples with respect to silicon-metal interface, interdiffusion, silicide formation, and grain size of silicon. The onset of silicide formation was found to occur at approximately 625 C. Above this temperature tungsten silicides were formed at a rate faster than the silicon deposition. Fine-grain silicon films were obtained at lower temperatures.

Fabrication of nanostructure by physical vapor deposition with glancing angle deposition technique and its applications

NASA Astrophysics Data System (ADS)

Horprathum, M.; Eiamchai, P.; Kaewkhao, J.; Chananonnawathorn, C.; Patthanasettakul, V.; Limwichean, S.; Nuntawong, N.; Chindaudom, P.

2014-09-01

A nanostructural thin film is one of the highly exploiting research areas particularly in applications in sensor, photocatalytic, and solar-cell technologies. In the past two decades, the integration of glancing-angle deposition (GLAD) technique to physical vapor deposition (PVD) process has gained significant attention for well-controlled multidimensional nanomorphologies because of fast, simple, cost-effective, and mass-production capability. The performance and functional properties of the coated thin films generally depend upon their nanostructural compositions, i.e., large aspect ratio, controllable porosity, and shape. Such structural platforms make the fabricated thin films very practical for several realistic applications. We therefore present morphological and nanostructural properties of various deposited materials, which included metals, i.e., silver (Ag), and oxide compounds, i.e., tungsten oxide (WO3), titanium dioxide (TiO2), and indium tin oxide (ITO). Different PVD techniques based on DC magnetron sputtering and electron-beam evaporation, both with the integrated GLAD component, were discussed. We further explore engineered nanostructures which enable controls of optical, electrical, and mechanical properties. These improvements led to several practical applications in surface-enhanced Raman, smart windows, gas sensors, self-cleaning materials and transparent conductive oxides (TCO).

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

1976-01-01

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Vapor deposition of hardened niobium

DOEpatents

Blocher, Jr., John M.; Veigel, Neil D.; Landrigan, Richard B.

1983-04-19

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Large-Area WS2 Film with Big Single Domains Grown by Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Liu, Pengyu; Luo, Tao; Xing, Jie; Xu, Hong; Hao, Huiying; Liu, Hao; Dong, Jingjing

2017-10-01

High-quality WS2 film with the single domain size up to 400 μm was grown on Si/SiO2 wafer by atmospheric pressure chemical vapor deposition. The effects of some important fabrication parameters on the controlled growth of WS2 film have been investigated in detail, including the choice of precursors, tube pressure, growing temperature, holding time, the amount of sulfur powder, and gas flow rate. By optimizing the growth conditions at one atmospheric pressure, we obtained tungsten disulfide single domains with an average size over 100 μm. Raman spectra, atomic force microscopy, and transmission electron microscopy provided direct evidence that the WS2 film had an atomic layer thickness and a single-domain hexagonal structure with a high crystal quality. And the photoluminescence spectra indicated that the tungsten disulfide films showed an evident layer-number-dependent fluorescence efficiency, depending on their energy band structure. Our study provides an important experimental basis for large-area, controllable preparation of atom-thick tungsten disulfide thin film and can also expedite the development of scalable high-performance optoelectronic devices based on WS2 film.

Physical Vapor Deposition of Thin Films

NASA Astrophysics Data System (ADS)

Mahan, John E.

2000-01-01

A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

Modelling of plasma-wall interaction and impurity transport in fusion devices and prompt deposition of tungsten as application

NASA Astrophysics Data System (ADS)

Kirschner, A.; Tskhakaya, D.; Brezinsek, S.; Borodin, D.; Romazanov, J.; Ding, R.; Eksaeva, A.; Linsmeier, Ch

2018-01-01

Main processes of plasma-wall interaction and impurity transport in fusion devices and their impact on the availability of the devices are presented and modelling tools, in particular the three-dimensional Monte-Carlo code ERO, are introduced. The capability of ERO is demonstrated on the example of tungsten erosion and deposition modelling. The dependence of tungsten deposition on plasma temperature and density is studied by simulations with a simplified geometry assuming (almost) constant plasma parameters. The amount of deposition increases with increasing electron temperature and density. Up to 100% of eroded tungsten can be promptly deposited near to the location of erosion at very high densities (˜1 × 1014 cm-3 expected e.g. in the divertor of ITER). The effect of the sheath characteristics on tungsten prompt deposition is investigated by using particle-in-cell (PIC) simulations to spatially resolve the plasma parameters inside the sheath. Applying PIC data instead of non-resolved sheath leads in general to smaller tungsten deposition, which is mainly due to a density and temperature decrease towards the surface within the sheath. Two-dimensional tungsten erosion/deposition simulations, assuming symmetry in toroidal direction but poloidally spatially varying plasma parameter profiles, have been carried out for the JET divertor. The simulations reveal, similar to experimental findings, that tungsten gross erosion is dominated in H-mode plasmas by the intra-ELM phases. However, due to deposition, the net tungsten erosion can be similar within intra- and inter-ELM phases if the inter-ELM electron temperature is high enough. Also, the simulated deposition fraction of about 84% in between ELMs is in line with spectroscopic observations from which a lower limit of 50% has been estimated.

Vapor Phase Deposition Using Plasma Spray-PVD™

NASA Astrophysics Data System (ADS)

von Niessen, K.; Gindrat, M.; Refke, A.

2010-01-01

Plasma spray—physical vapor deposition (PS-PVD) is a low pressure plasma spray technology to deposit coatings out of the vapor phase. PS-PVD is a part of the family of new hybrid processes recently developed by Sulzer Metco AG (Switzerland) on the basis of the well-established low pressure plasma spraying (LPPS) technology. Included in this new process family are plasma spray—chemical vapor deposition (PS-CVD) and plasma spray—thin film (PS-TF) processes. In comparison to conventional vacuum plasma spraying and LPPS, these new processes use a high energy plasma gun operated at a work pressure below 2 mbar. This leads to unconventional plasma jet characteristics which can be used to obtain specific and unique coatings. An important new feature of PS-PVD is the possibility to deposit a coating not only by melting the feed stock material which builds up a layer from liquid splats, but also by vaporizing the injected material. Therefore, the PS-PVD process fills the gap between the conventional PVD technologies and standard thermal spray processes. The possibility to vaporize feedstock material and to produce layers out of the vapor phase results in new and unique coating microstructures. The properties of such coatings are superior to those of thermal spray and EB-PVD coatings. This paper reports on the progress made at Sulzer Metco to develop functional coatings build up from vapor phase of oxide ceramics and metals.

Automatic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1981-01-01

Report reviews chemical vapor deposition (CVD) for processing integrated circuits and describes fully automatic machine for CVD. CVD proceeds at relatively low temperature, allows wide choice of film compositions (including graded or abruptly changing compositions), and deposits uniform films of controllable thickness at fairly high growth rate. Report gives overview of hardware, reactants, and temperature ranges used with CVD machine.

Design, fabrication and testing of porous tungsten vaporizers for mercury ion thrusters

NASA Technical Reports Server (NTRS)

Zavesky, R.; Kroeger, E.; Kami, S.

1983-01-01

The dispersions in the characteristics, performance and reliability of vaporizers for early model 30-cm thrusters were investigated. The purpose of the paper is to explore the findings and to discuss the approaches that were taken to reduce the observed dispersion and present the results of a program which validated those approaches. The information that is presented includes porous tungsten materials specifications, a discussion of assembly procedures, and a description of a test program which screens both material and fabrication processes. There are five appendices providing additional detail in the areas of vaporizer contamination, nitrogen flow testing, bubble testing, porosimeter testing, and mercury purity. Four neutralizers, seven cathodes and five main vaporizers were successfully fabricated, tested, and operated on thrusters. Performance data from those devices is presented and indicates extremely repeatable results from using the design and fabrication procedures.

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Komae, Yasuaki; Yasui, Kanji; Suemitsu, Maki; Endoh, Tetsuo; Ito, Takashi; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2009-07-01

Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

Hydrocarbon deposition in gaps of tungsten and graphite tiles in Experimental Advanced Superconducting Tokamak edge plasma parameters

NASA Astrophysics Data System (ADS)

Xu, Qian; Yang, Zhongshi; Luo, Guang-Nan

2015-09-01

The three-dimensional (3D) Monte Carlo code PIC-EDDY has been utilized to investigate the mechanism of hydrocarbon deposition in gaps of tungsten tiles in the Experimental Advanced Superconducting Tokamak (EAST), where the sheath potential is calculated by the 2D in space and 3D in velocity particle-in-cell method. The calculated results for graphite tiles using the same method are also presented for comparison. Calculation results show that the amount of carbon deposited in the gaps of carbon tiles is three times larger than that in the gaps of tungsten tiles when the carbon particles from re-erosion on the top surface of monoblocks are taken into account. However, the deposition amount is found to be larger in the gaps of tungsten tiles at the same CH4 flux. When chemical sputtering becomes significant as carbon coverage on tungsten increases with exposure time, the deposition inside the gaps of tungsten tiles would be considerable.

Effect of negative bias on the composition and structure of the tungsten oxide thin films deposited by magnetron sputtering

NASA Astrophysics Data System (ADS)

Wang, Meihan; Lei, Hao; Wen, Jiaxing; Long, Haibo; Sawada, Yutaka; Hoshi, Yoichi; Uchida, Takayuki; Hou, Zhaoxia

2015-12-01

Tungsten oxide thin films were deposited at room temperature under different negative bias voltages (Vb, 0 to -500 V) by DC reactive magnetron sputtering, and then the as-deposited films were annealed at 500 °C in air atmosphere. The crystal structure, surface morphology, chemical composition and transmittance of the tungsten oxide thin films were characterized by X-ray diffraction (XRD), field emission scanning electron microscopy (FE-SEM), X-ray photoelectron spectroscopy (XPS) and UV-vis spectrophotometer. The XRD analysis reveals that the tungsten oxide films deposited at different negative bias voltages present a partly crystallized amorphous structure. All the films transfer from amorphous to crystalline (monoclinic + hexagonal) after annealing 3 h at 500 °C. Furthermore, the crystallized tungsten oxide films show different preferred orientation. The morphology of the tungsten oxide films deposited at different negative bias voltages is consisted of fine nanoscale grains. The grains grow up and conjunct with each other after annealing. The tungsten oxide films deposited at higher negative bias voltages after annealing show non-uniform special morphology. Substoichiometric tungsten oxide films were formed as evidenced by XPS spectra of W4f and O1s. As a result, semi-transparent films were obtained in the visible range for all films deposited at different negative bias voltages.

Inter-diffusion analysis of joint interface of tungsten-rhenium couple

NASA Astrophysics Data System (ADS)

Hua, Y. F.; Li, Z. X.; Zhang, X.; Du, J. H.; Huang, C. L.; Du, M. H.

2011-09-01

The tungsten-rhenium couple was prepared by using glow plasma physical vapor deposition (PVD) on the isotropic fine grained graphite (IG) substrates. Diffusion anneals of the tungsten-rhenium couple were conducted at the temperature from 1100 °C to 1400 °C to investigate the inter-diffusion behaviors. The results showed that the thickness of the inter-diffusion zone increased with increasing annealing temperature. The relationship between the inter-diffusion coefficient and the annealing temperature accorded with the Arrhenius manner. The value of inter-diffusion activation energies was 189 kJ/mole (1.96 eV). The service time of tungsten-rhenium multilayer diffusion barrier was limited by the inter-diffusion for rhenium and tungsten rather than the diffusion of carbon in rhenium.

Method and apparatus for conducting variable thickness vapor deposition

DOEpatents

Nesslage, G.V.

1984-08-03

A method of vapor depositing metal on a substrate in variable thickness comprises conducting the deposition continuously without interruption to avoid formation of grain boundaries. To achieve reduced deposition in specific regions a thin wire or ribbon blocking body is placed between source and substrate to partially block vapors from depositing in the region immediately below.

ERO modelling of tungsten erosion and re-deposition in EAST L mode discharges

NASA Astrophysics Data System (ADS)

Xie, H.; Ding, R.; Kirschner, A.; Chen, J. L.; Ding, F.; Mao, H. M.; Feng, W.; Borodin, D.; Wang, L.

2017-09-01

Tungsten erosion and re-deposition at the upper outer divertor of the Experimental Advanced Superconducting Tokamak has been modelled using the 3D Monte Carlo code ERO. The measured divertor plasma condition in attached L mode discharges with upper single null configuration has been used to build the background plasma in the simulations. The tungsten gross erosion rate is mainly determined by carbon impurity in the background plasma. Increasing carbon concentration can first increase and afterwards suppress the tungsten erosion rate. Taking into account the material mixing surface model, the influence of eroded particles returning to the surface on sputtering has been studied. Sputtering by eroded particles returning to the surface can significantly enhance the gross erosion by reduction of the carbon ratio within the surface interaction layer and by increasing the erosion rate due to sputtering by both eroded tungsten and carbon particles. Modelling indicates that carbon deposition occurs on the dome plate and part of the vertical plate close to the dome plate, whereas tungsten net erosion occurs on most of the vertical plate. The modelling results are in reasonable agreement with the experimental WI spectroscopy.

Growth of tungsten oxide nanostructures by chemical solution deposition

NASA Astrophysics Data System (ADS)

Jin, L. H.; Bai, Y.; Li, C. S.; Wang, Y.; Feng, J. Q.; Lei, L.; Zhao, G. Y.; Zhang, P. X.

2018-05-01

Tungsten oxide nanostructures were fabricated on LaAlO3 (00l) substrates by a simple chemical solution deposition. The decomposition behavior and phase formation of ammonium tungstate precursor were characterized by thermal analysis and X-ray diffraction. Moreover, the morphology and chemical state of nanostructures were analyzed by scanning electron microscopy, atomic force microscopy and X-ray photoelectron spectra. The effects of crystallization temperature on the formation of nanodots and nanowires were investigated. The results indicated that the change of nanostructures had close relationship with the crystallization temperature during the chemical solution deposition process. Under higher crystallization temperature, the square-like dots transformed into the dome-like nanodots and nanowires. Moreover high density well-ordered nanodots could be obtained on the substrate with the further increase of crystallization temperature. It also suggested that this simple chemical solution process could be used to adjust the nanostructures of tungsten oxide compounds on substrate.

Stratabound tungsten deposits in the Alps revisited in the light of new age data

NASA Astrophysics Data System (ADS)

Raith, Johann

2013-04-01

Correct genetic models are vital for successful exploration of mineral deposits. Key information for deciding on the validity of a genetic model proposed for an ore deposit comes from geochronology. In this presentation we will demonstrate how absoute age determination of ore minerals and associated host rocks with conventional and in-situ dating techniques using the U-Pb, Sm-Nd and Re-Os systems have changed our understanding about the formation of stratiform/stratabound scheelite deposits, a rather unique class of tungsten deposits. This will be demonstrated for tungsten deposits in the Alpine orogen, with focus on the Felbertal scheelite deposit in the Eastern Alps, which is the type locality for this class of tungsten deposits. Genetic models, first propagated in the 1970-ties, postulated a syngenetic/syndiagenetic formation of this and similar deposits by exhalative-hydrothermal processes related to Early Palaeozoic mafic volcanism with subsequent magmatic as well as metamorphic reworking and mobilisation during the Variscan and Alpine orogeny. Discovery of Felbertal has boosted world-wide exploration for this type of W deposit, however without success. No second economic deposit of this type was ever discovered, likely because of inadequate exploration models that were based on a wrong genetic concept. Some essential aspects controlling formation of tungsten deposits in the Eastern Alps are: (1) They are restricted to some Early Palaeozoic terranes now incorporated in the Alpine orogen (pre-Alpine Penninic units, Celtic terrane within the Austroalpine units); this could indicate a selective geochemical pre-concentration of W in some parts of the pre-Alpine crust. (2) Collision-related Variscan magmatism with emplacement of a geochemically highly anomalous metagranitoid at c. 340 Ma ("K1 orthogneiss") proved to be crucial for the Felbertal deposit. (3) A new in-situ U-Pb age of c. 340 Ma for "Scheelite 1" (previously thought to be c. 520 Ma) confirms that at

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

NASA Astrophysics Data System (ADS)

Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap; Tanemura, Masaki

2016-02-01

The synthesis of large-area monolayer tungsten disulphide (WS2) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS2 crystals using tungsten hexachloride (WCl6) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl6 in ethanol was drop-casted on SiO2/Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS2 crystals on the substrate. The crystal geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS2 single crystalline monolayer can be grown using the WCl6 precursor. Our finding shows an easier and effective approach to grow WS2 monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction.

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

DTIC Science & Technology

2016-04-27

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical... vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...peer-reviewed journals: Number of Papers published in non peer-reviewed journals: Final Report: Hybrid Physical Vapor Deposition Instrument for Advanced

Erosion and Modifications of Tungsten-Coated Carbon and Copper Under High Heat Flux

NASA Astrophysics Data System (ADS)

Liu, Xiang; S, Tamura; K, Tokunaga; N, Yoshida; Zhang, Fu; Xu, Zeng-yu; Ge, Chang-chun; N, Noda

2003-08-01

Tungsten-coated carbon and copper was prepared by vacuum plasma spraying (VPS) and inert gas plasma spraying (IPS), respectively. W/CFC (Tungsten/Carbon Fiber-Enhanced material) coating has a diffusion barrier that consists of W and Re multi-layers pre-deposited by physical vapor deposition on carbon fiber-enhanced materials, while W/Cu coating has a graded transition interface. Different grain growth processes of tungsten coatings under stable and transient heat loads were observed, their experimental results indicated that the recrystallizing temperature of VPS-W coating was about 1400 °C and a recrystallized columnar layer of about 30 μm thickness was formed by cyclic heat loads of 4 ms pulse duration. Erosion and modifications of W/CFC and W/Cu coatings under high heat load, such as microstructure changes of interface, surface plastic deformations and cracks, were investigated, and the erosion mechanism (erosion products) of these two kinds of tungsten coatings under high heat flux was also studied.

Tungsten and Barium Transport in the Internal Plasma of Hollow Cathodes

NASA Technical Reports Server (NTRS)

Polk, James E.; Mikellides, Ioannis G.; Katz, Ira; Capece, Angela M.

2008-01-01

The effect of tungsten erosion, transport and redeposition on the operation of dispenser hollow cathodes was investigated in detailed examinations of the discharge cathode inserts from an 8200 hour and a 30,352 hour ion engine wear test. Erosion and subsequent re-deposition of tungsten in the electron emission zone at the downstream end of the insert reduces the porosity of the tungsten matrix, preventing the flow of barium from the interior. This inhibits the interfacial reactions of the barium-calcium-aluminate impregnant with the tungsten in the pores. A numerical model of barium transport in the internal xenon discharge plasma shows that the barium required to reduce the work function in the emission zone can be supplied from upstream through the gas phase. Barium that flows out of the pores of the tungsten insert is rapidly ionized in the xenon discharge and pushedback to the emitter surface by the electric field and drag from the xenon ion flow. Thisbarium ion flux is sufficient to maintain a barium surface coverage at the downstream endgreater than 0.6, even if local barium production at that point is inhibited by tungsten deposits. The model also shows that the neutral barium pressure exceeds the equilibrium vapor pressure of the impregnant decomposition reaction over much of the insert length,so the reactions are suppressed. Only a small region upstream of the zone blocked by tungsten deposits is active and supplies the required barium. These results indicate that hollowcathode failure models based on barium depletion rates in vacuum dispenser cathodes are very conservative.

Structural Characterization of Vapor-deposited Organic Glasses

NASA Astrophysics Data System (ADS)

Gujral, Ankit

Physical vapor deposition, a common route of thin film fabrication for organic electronic devices, has recently been shown to produce organic glassy films with enhanced kinetic stability and anisotropic structure. Anisotropic structures are of interest in the organic electronics community as it has been shown that certain structures lead to enhanced device performance, such as higher carrier mobility and better light outcoupling. A mechanism proposed to explain the origin of the stability and anisotropy of vapor-deposited glasses relies on two parameters: 1) enhanced molecular mobility at the free surface (vacuum interface) of a glass, and 2) anisotropic molecular packing at the free surface of the supercooled liquid of the glass-forming system. By vapor-depositing onto a substrate maintained at Tsubstrate < Tg (where Tg is the glass transition temperature), the enhanced molecular mobility at the free surface allows every molecule that lands on the surface to at least partially equilibrate to the preferred anisotropic molecular packing motifs before being buried by further deposition. The extent of equilibration depends on the mobility at the surface, controlled by Tsubstrate, and the residence time on the free surface, controlled by the rate of deposition. This body of work deals with the optimization of deposition conditions and system chemistry to prepare and characterize films with functional anisotropic structures. Here, we show that structural anisotropy can be attained for a variety of molecular systems including a rod-shaped non-mesogen, TPD, a rod-shaped smectic mesogen, itraconazole, two discotic mesogens, phenanthroperylene-ester and triphenylene-ester, and a disc-shaped non-mesogen, m-MTDATA. Experimental evidence is also provided of the anisotropic molecular packing at the free surface (vacuum interface) for the disc-shaped systems that are consistent with the expectations of the proposed mechanism and the final bulk state of the vapor-deposited

Chemical-Vapor-Deposited Diamond Film

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

1999-01-01

This chapter describes the nature of clean and contaminated diamond surfaces, Chemical-vapor-deposited (CVD) diamond film deposition technology, analytical techniques and the results of research on CVD diamond films, and the general properties of CVD diamond films. Further, it describes the friction and wear properties of CVD diamond films in the atmosphere, in a controlled nitrogen environment, and in an ultra-high-vacuum environment.

Research and development of plasma sprayed tungsten coating on graphite and copper substrates

NASA Astrophysics Data System (ADS)

Liu, Xiang; Zhang, Fu; Tao, Shunyan; Cao, Yunzhen; Xu, Zengyu; Liu, Yong; Noda, N.

2007-06-01

Vacuum plasma sprayed tungsten coating on graphite and copper substrates has been prepared. VPS-W coated graphite has multilayered silicon and tungsten interface pre-deposited by physical vapor deposition (PVD) and VPS-W coated copper has graded transition interlayer. VPS-W coating was characterized, and then the high heat flux properties of the coating were examined. Experimental results indicated that both VPS-W coated graphite and VPS-W coated copper could endure 1000 cycles without visible failure under a heat flux of approximately 5 MW/m2 absorbed power density and 5 s pulse duration. A comparison between the present VPS-W coated graphite and VPS-W coated carbon fiber composite (CX-2002U) with Re interface made by Plansee Aktiengesllshaft was carried out. Results show that both Re and Si are suitable as intermediate layer for tungsten coating on carbon substrates.

The Design and Use of Tungsten Coated TZM Molybdenum Tile Inserts in the DIII-D Tokamak Divertor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murphy, Christopher; Nygren, R. E.; Chrobak, C P.

Future tokamak devices are envisioned to utilize a high-Z metal divertor with tungsten as theleading candidate. However, tokamak experiments with tungsten divertors have seen significantdetrimental effects on plasma performance. The DIII-D tokamak presently has carbon as theplasma facing surface but to study the effect of tungsten on the plasma and its migration aroundthe vessel, two toroidal rows of carbon tiles in the divertor region were modified with high-Zmetal inserts, composed of a molybdenum alloy (TZM) coated with tungsten. A dedicated twoweek experimental campaign was run with the high-Z metal inserts. One row was coated withtungsten containing naturally occurring levels ofmore » isotopes. The second row was coated withtungsten where the isotope 182W was enhanced from the natural level of 26% up to greater than90%. The different isotopic concentrations enabled the experiment to differentiate between thetwo different sources of metal migration from the divertor. Various coating methods wereexplored for the deposition of the tungsten coating, including chemical vapor deposition,electroplating, vacuum plasma spray, and electron beam physical vapor deposition. The coatingswere tested to see if they were robust enough to act as a divertor target for the experiment. Testsincluded cyclic thermal heating using a high power laser and high-fluence deuterium plasmabombardment. The issues associate with the design of the inserts (tile installation, thermal stress,arcing, leading edges, surface preparation, etc.), are reviewed. The results of the tests used toselect the coating method and preliminary experimental observations are presented.« less

Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Haven, Victor E.

1999-01-01

Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

Impact of temperature during He+ implantation on deuterium retention in tungsten, tungsten with carbon deposit and tungsten carbide

NASA Astrophysics Data System (ADS)

Oya, Yasuhisa; Sato, Misaki; Li, Xiaochun; Yuyama, Kenta; Fujita, Hiroe; Sakurada, Shodai; Uemura, Yuki; Hatano, Yuji; Yoshida, Naoaki; Ashikawa, Naoko; Sagara, Akio; Chikada, Takumi

2016-02-01

Temperature dependence on deuterium (D) retention for He+ implanted tungsten (W) was studied by thermal desorption spectroscopy (TDS) to evaluate the tritium retention behavior in W. The activation energies were evaluated using Hydrogen Isotope Diffusion and Trapping (HIDT) simulation code and found to be 0.55 eV, 0.65 eV, 0.80 eV and 1.00 eV. The heating scenarios clearly control the D retention behavior and, dense and large He bubbles could work as a D diffusion barrier toward the bulk, leading to D retention enhancement at lower temperature of less than 430 K, even if the damage was introduced by He+ implantation. By comparing the D retention for W, W with carbon deposit and tungsten carbide (WC), the dense carbon layer on the surface enhances the dynamic re-emission of D as hydrocarbons, and induces the reduction of D retention. However, by He+ implantation, the D retention was increased for all the samples.

Chemical-Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Cagliostro, D. E.; Riccitiello, S. R.; Ren, J.; Zaghi, F.

1993-01-01

Report describes experiments in chemical-vapor deposition of silicon carbide by pyrolysis of dimethyldichlorosilane in hydrogen and argon carrier gases. Directed toward understanding chemical-kinetic and mass-transport phenomena affecting infiltration of reactants into, and deposition of SiC upon, fabrics. Part of continuing effort to develop method of efficient and more nearly uniform deposition of silicon carbide matrix throughout fabric piles to make improved fabric/SiC-matrix composite materials.

Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

2017-03-01

Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

Comparative investigation of smooth polycrystalline diamond films on dental burs by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Sein, Htet; Ahmed, Waqar; Rego, Christopher; Jackson, Mark; Polini, Riccardo

2006-04-01

Depositions of hot filament chemical vapor-deposited diamond on cobalt-cemented tungsten carbide (WC-Co) rotary cutting dental burs are presented. Conventional dental tools made of sintered polycrystalline diamond have a number of problems associated with the heterogeneity of the crystallite, decreased cutting efficiency, and short life. A preferential (111) faceted diamond was obtained after 15 h of deposition at a growth rate of 1.1 µm/h. Diamond-coated WC-Co dental burs and conventional sintered burs are mainly used in turning, milling, and drilling operations for machining metal ceramic hard alloys such as CoCr, composite teeth, and aluminum alloy in the dental laboratory. The influence of structure, the mechanical characteristics of both diamond grains and hard alloys on the wear behavior, as well as the regimen of grinding on diamond wear are considered. Erosion wear properties are also investigated under air-sand erosion testing. After machining with excessive cutting performance, calculations can be made on flank and crater wear areas. Diamond-coated WC-Co dental burs offered significantly better erosion and wear resistance compared with uncoated WC-Co tools and sintered burs.

An effective approach to synthesize monolayer tungsten disulphide crystals using tungsten halide precursor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Thangaraja, Amutha; Shinde, Sachin M.; Kalita, Golap, E-mail: kalita.golap@nitech.ac.jp

2016-02-01

The synthesis of large-area monolayer tungsten disulphide (WS{sub 2}) single crystal is critical for realistic application in electronic and optical devices. Here, we demonstrate an effective approach to synthesize monolayer WS{sub 2} crystals using tungsten hexachloride (WCl{sub 6}) as a solid precursor in atmospheric chemical vapor deposition process. In this technique, 0.05M solution of WCl{sub 6} in ethanol was drop-casted on SiO{sub 2}/Si substrate to create an even distribution of the precursor, which was reduced and sulfurized at 750 °C in Ar atmosphere. We observed growth of triangular, star-shaped, as well as dendritic WS{sub 2} crystals on the substrate. The crystalmore » geometry evolves with the shape and size of the nuclei as observed from the dendritic structures. These results show that controlling the initial nucleation and growth process, large WS{sub 2} single crystalline monolayer can be grown using the WCl{sub 6} precursor. Our finding shows an easier and effective approach to grow WS{sub 2} monolayer using tungsten halide solution-casting, rather than evaporating the precursor for gas phase reaction.« less

Moire-Fringe Images of Twin Boundaries in Chemical Vapor Deposited Diamond

DTIC Science & Technology

1992-07-10

Moire-Fringe Images of Twin Boundaries in Chemical Vapor Deposited Diamond IJ PERSONAL AUITHOR(S) - D. Shechtman. A. Fldman, M.D. Vaudin, and J.L...micrographs of chemical vapor deposited diamond can be interprete as Moire fringes that occur when viewing twin boundaries that are inclined to the electron...Dist J Special TECHNICAL REPORT No. 14 eca MOIRE-FRINGE IMAGES OF TWIN BOUNDARIES IN CHEMICAL VAPOR DEPOSITED DIAMOND D. Shechtman, A. Feldman, M.D

Comparison of a model vapor deposited glass films to equilibrium glass films

NASA Astrophysics Data System (ADS)

Flenner, Elijah; Berthier, Ludovic; Charbonneau, Patrick; Zamponi, Francesco

Vapor deposition of particles onto a substrate held at around 85% of the glass transition temperature can create glasses with increased density, enthalpy, kinetic stability, and mechanical stability compared to an ordinary glass created by cooling. It is estimated that an ordinary glass would need to age thousands of years to reach the kinetic stability of a vapor deposited glass, and a natural question is how close to the equilibrium is the vapor deposited glass. To understand the process, algorithms akin to vapor deposition are used to create simulated glasses that have a higher kinetic stability than their annealed counterpart, although these glasses may not be well equilibrated either. Here we use novel models optimized for a swap Monte Carlo algorithm in order to create equilibrium glass films and compare their properties with those of glasses obtained from vapor deposition algorithms. This approach allows us to directly assess the non-equilibrium nature of vapor-deposited ultrastable glasses. Simons Collaboration on Cracking the Glass Problem and NSF Grant No. DMR 1608086.

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

DTIC Science & Technology

2016-04-27

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical...vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...The instrumentation enables clean, uniform, and rapid deposition of a wide variety of metallic, semiconducting, and ceramic thin films with

Vacuum vapor deposition: A spinoff of space welding development

NASA Technical Reports Server (NTRS)

Poorman, R. M.

1991-01-01

A vapor deposition process has been defined through a spinoff effort of space welding development. In this development for welding in a space environment, a hollow electrode was used to add gas precisely at the welding arc. This provides gas for ionization which carries the welding arc current. During this welding development metal vapor coatings were observed. These coatings are unique in that they are produced by a new process. Some coatings produced and the potential of this new and innovative vapor deposition process are characterized. Advantages over prior art are discussed.

Chemical vapor deposition of mullite coatings

DOEpatents

Sarin, Vinod; Mulpuri, Rao

1998-01-01

This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

Deposition of naphthalene and tetradecane vapors in models of the human respiratory system.

PubMed

Zhang, Zhe; Kleinstreuer, Clement

2011-01-01

Jet-propulsion fuel (particularly JP-8) is currently being used worldwide, exposing especially Air Force personnel and people living near airfields to JP-8 vapors and aerosols during aircraft fueling, maintenance operations, and/or cold starts. JP-8 is a complex mixture containing >200, mostly toxic, aliphatic and aromatic hydrocarbon compounds of which tetradecane and naphthalene were chosen as two representative chemical markers for computer simulations. Thus, transport and deposition of naphthalene and tetradecane vapors have been simulated in models of the human respiratory system. The inspiratory deposition data were analyzed in terms of regional deposition fractions (DFs) and deposition enhancement factors (DEF). The vapor depositions are affected by vapor properties (e.g. diffusivity), airway geometric features, breathing patterns, inspiratory flow rates, as well as airway-wall absorption parameter. Specifically, the respiratory uptake of vapors is greatly influenced by the degree of airway-wall absorption. For example, being an almost insoluble species in the mucus layer, the deposition of tetradecane vapor is nearly zero in the extrathoracic and tracheobronchial (TB) airways, that is, the DF is <1%. The remaining vapors may penetrate further and deposit in the alveolar airways. The DF of tetradecane vapors during inhalation in the alveolar region can range from 7% to 24%, depending on breathing waveform, inhalation rate, and thickness of the mucus layer. In contrast, naphthalene vapor almost completely deposits in the extrathoracic and TB airways and hardly moves downstream and deposits in the respiratory zone. The DFs of naphthalene vapor in the extrathoracic airways from nasal/oral to trachea under normal breathing conditions (Q = 15-60 L/min) are about 12-34%, although they are about 66-87% in the TB airways. In addition, the variation of breathing routes (say, from nasal breathing to oral breathing) may influence the vapor deposition in the

Simple Chemical Vapor Deposition Experiment

ERIC Educational Resources Information Center

Pedersen, Henrik

2014-01-01

Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

Irradiation test of tungsten clad uranium carbide-zirconium carbide ((U,Zr)C) specimens for thermionic reactor application at conditions conductive to long-term performance

NASA Technical Reports Server (NTRS)

Creagh, J. W. R.; Smith, J. R.

1973-01-01

Uranium carbide fueled, thermionic emitter configurations were encapsulated and irradiated. One capsule contained a specimen clad with fluoride derived chemically vapor deposited (CVD) tungsten. The other capsule used a duplex clad specimen consisting of chloride derived on floride derived CVD tungsten. Both fuel pins were 16 millimeters in diameter and contained a 45.7-millimeter length of fuel.

Fabrication of highly selective tungsten oxide ammonia sensors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Llobet, E.; Molas, G.; Molinas, P.

Tungsten oxide is shown to be a very promising material for the fabrication of highly selective ammonia sensors. Films of WO{sub 3} were deposited onto a silicon substrate by means of the drop-coating method. Then, the films were annealed in dry air at two different temperatures (300 and 400 C). X-ray photoelectron spectroscopy was used to investigate the composition of the films. Tungsten appeared both in WO{sub 2} and WO{sub 3} oxidation states, but the second state was clearly dominant. Scanning electron microscopy results showed that the oxide was amorphous or nanocrystalline. The WO{sub 3}-based devices were sensitive to ammoniamore » vapors when operated between 250 and 350 C. The optimal operating temperature for the highest sensitivity to ammonia was 300 C. Furthermore, when the devices were operated at 300 C, their sensitivity to other reducing species such as ethanol, methane, toluene, and water vapor was significantly lower, and this resulted in a high selectivity to ammonia. A model for the sensing mechanisms of the fabricated sensors is proposed.« less

Substrate temperature controls molecular orientation in two-component vapor-deposited glasses

DOE PAGES

Jiang, J.; Walters, D. M.; Zhou, D.; ...

2016-02-22

Vapor-deposited glasses can be anisotropic and molecular orientation is important for organic electronics applications. In organic light emitting diodes (OLEDs), for example, the orientation of dye molecules in two-component emitting layers significantly influences emission efficiency. Here we investigate how substrate temperature during vapor deposition influences the orientation of dye molecules in a model two-component system. We determine the average orientation of a linear blue light emitter 1,4-di-[4-( N,N-diphenyl)amino]styrylbenzene (DSA-Ph) in mixtures with aluminum-tris(8-hydroxyquinoline) (Alq 3) by spectroscopic ellipsometry and IR dichroism. We find that molecular orientation is controlled by the ratio of the substrate temperature during deposition and the glassmore » transition temperature of the mixture. Furthermore, these findings extend recent results for single component vapor-deposited glasses and suggest that, during vapor deposition, surface mobility allows partial equilibration towards orientations preferred at the free surface of the equilibrium liquid.« less

Chemical vapor deposition reactor. [providing uniform film thickness

NASA Technical Reports Server (NTRS)

Chern, S. S.; Maserjian, J. (Inventor)

1977-01-01

An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

Chemical vapor deposition of epitaxial silicon

DOEpatents

Berkman, Samuel

1984-01-01

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

High speed, mask-less, laser controlled deposition of microscale tungsten tracks using 405 nm wavelength diode laser

NASA Astrophysics Data System (ADS)

Ten, Jyi Sheuan; Sparkes, Martin; O'Neill, William

2017-02-01

A rapid, mask-less deposition technique for the deposition of conductive tracks to nano- and micro-devices has been developed. The process uses a 405 nm wavelength laser diode for the direct deposition of tungsten tracks on silicon substrates via laser assisted chemical vapour deposition. Unlike lithographic processes this technique is single step and does not require chemical masks that may contaminate the substrate. To demonstrate the process, tungsten was deposited from tungsten hexacarbonyl precursors to produce conductive tracks with widths of 1.7-28 μm and heights of 0.05-35 μm at laser scan speeds up to 40 μm/s. The highest volumetric deposition rate achieved is 1×104 μm3/s, three orders of magnitude higher than that of focused ion beam deposition and on par with a 515 nm wavelength argon ion laser previously reported as the laser source. The microstructure and elemental composition of the deposits are comparable to that of largearea chemical vapour deposition methods using the same chemical precursor. The contact resistance and track resistance of the deposits has been measured using the transfer length method to be 205 μΩ cm. The deposition temperature has been estimated at 334 °C from a laser heat transfer model accounting for temperature dependent optical and physical properties of the substrate. The peak temperatures achieved on silicon and other substrates are higher than the thermal dissociation temperature of numerous precursors, indicating that this technique can also be used to deposit other materials such as gold and platinum on various substrates.

Effects of nitrogen ion implantation time on tungsten films deposited by DC magnetron sputtering on AISI 410 martensitic stainless steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Malau, Viktor, E-mail: malau@ugm.ac.id; Ilman, Mochammad Noer, E-mail: noer-ilman@yahoo.com; Iswanto, Priyo Tri, E-mail: priyatri@yahoo.com

Nitrogen ion implantation time on tungsten thin film deposited on surface of AISI 410 steel has been performed. Tungsten thin film produced by dc magnetron sputtering method was deposited on AISI 410 martensitic stainless steel substrates, and then the nitrogen ions were implanted on tungsten thin film. The objective of this research is to investigate the effects of implantation deposition time on surface roughness, microhardness, specific wear and corrosion rate of nitrogen implanted on tungsten film. Magnetron sputtering process was performed by using plasma gas of argon (Ar) to bombardier tungsten target (W) in a vacuum chamber with a pressuremore » of 7.6 x 10{sup −2} torr, a voltage of 300 V, a sputter current of 80 mA for sputtered time of 10 minutes. Nitrogen implantation on tungsten film was done with an initial pressure of 3x10{sup −6} mbar, a fluence of 2 x 10{sup 17} ions/cm{sup 2}, an energy of 100 keV and implantation deposition times of 0, 20, 30 and 40 minutes. The surface roughness, microhardness, specific wear and corrosion rate of the films were evaluated by surfcorder test, Vickers microhardness test, wear test and potentiostat (galvanostat) test respectively. The results show that the nitrogen ions implanted deposition time on tungsten film can modify the surface roughness, microhardness, specific wear and corrosion rate. The minimum surface roughness, specific wear and corrosion rate can be obtained for implantation time of 20 minutes and the maximum microhardness of the film is 329 VHN (Vickers Hardness Number) for implantation time of 30 minutes. The specific wear and corrosion rate of the film depend directly on the surface roughness.« less

Vacuum vapor deposition gun assembly

DOEpatents

Zeren, Joseph D.

1985-01-01

A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

Advanced deposition model for thermal activated chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cai, Dang

Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

Thin films deposited by femtosecond pulsed laser ablation of tungsten carbide

NASA Astrophysics Data System (ADS)

De Bonis, A.; Teghil, R.; Santagata, A.; Galasso, A.; Rau, J. V.

2012-09-01

Ultra-short Pulsed Laser Deposition has been applied to the production of thin films from a tungsten carbide target. The gaseous phase obtained by the laser ablation shows a very weak primary plume, in contrast with a very strong secondary one. The deposited films, investigated by Scanning Electron Microscopy, Atomic Force Microscopy, X-Ray Photoelectron Spectroscopy and X-Ray Diffraction, present a mixture of WC and other phases with lower carbon content. All films are amorphous, independently from the substrate temperature. The characteristics of the deposits have been explained in terms of thermal evaporation and cooling rate of molten particles ejected from the target.

Solar-induced chemical vapor deposition of diamond-type carbon films

DOEpatents

Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

1994-09-13

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

Solar-induced chemical vapor deposition of diamond-type carbon films

DOEpatents

Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

1994-01-01

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

Evaporation-assisted high-power impulse magnetron sputtering: The deposition of tungsten oxide as a case study

DOE Office of Scientific and Technical Information (OSTI.GOV)

Hemberg, Axel; Dauchot, Jean-Pierre; Snyders, Rony

2012-07-15

The deposition rate during the synthesis of tungsten trioxide thin films by reactive high-power impulse magnetron sputtering (HiPIMS) of a tungsten target increases, above the dc threshold, as a result of the appropriate combination of the target voltage, the pulse duration, and the amount of oxygen in the reactive atmosphere. This behavior is likely to be caused by the evaporation of the low melting point tungsten trioxide layer covering the metallic target in such working conditions. The HiPIMS process is therefore assisted by thermal evaporation of the target material.

Growth and tribological properties of diamond films on silicon and tungsten carbide substrates

NASA Astrophysics Data System (ADS)

Radhika, R.; Ramachandra Rao, M. S.

2016-11-01

Hot filament chemical vapor deposition technique was used to deposit microcrystalline diamond (MCD) and nanocrystalline diamond (NCD) films on silicon (Si) and tungsten carbide (WC-6Co) substrates. Friction coefficient of larger diamond grains deposited on WC-6Co substrate shows less value approximately 0.2 while this differs marginally on films grown on Si substrate. The study claims that for a less friction coefficient, the grain size is not necessarily smaller. However, the less friction coefficient (less than 0.1 saturated value) in MCD and NCD deposited on Si is explained by the formation of graphitized tribolayer. This layer easily forms when diamond phase is thermodynamically unstable.

Enthalpy and high temperature relaxation kinetics of stable vapor-deposited glasses of toluene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, Deepanjan; Sadtchenko, Vlad, E-mail: vlad@gwu.edu

Stable non-crystalline toluene films of micrometer and nanometer thicknesses were grown by vapor deposition at distinct rates and probed by fast scanning calorimetry. Fast scanning calorimetry is shown to be extremely sensitive to the structure of the vapor-deposited phase and was used to characterize simultaneously its kinetic stability and its thermodynamic properties. According to our analysis, transformation of vapor-deposited samples of toluene during heating with rates in excess 10{sup 5} K s{sup −1} follows the zero-order kinetics. The transformation rate correlates strongly with the initial enthalpy of the sample, which increases with the deposition rate according to sub-linear law. Analysismore » of the transformation kinetics of vapor-deposited toluene films of various thicknesses reveal a sudden increase in the transformation rate for films thinner than 250 nm. The change in kinetics seems to correlate with the surface roughness scale of the substrate. The implications of these findings for the formation mechanism and structure of vapor-deposited stable glasses are discussed.« less

Physical vapor deposition and metalorganic chemical vapor deposition of yttria-stabilized zirconia thin films

NASA Astrophysics Data System (ADS)

Kaufman, David Y.

Two vapor deposition techniques, dual magnetron oblique sputtering (DMOS) and metalorganic chemical vapor deposition (MOCVD), have been developed to produce yttria-stabilized zirconia (YSZ) films with unique microstructures. In particular, biaxially textured thin films on amorphous substrates and dense thin films on porous substrates have been fabricated by DMOS and MOCVD, respectively. DMOS YSZ thin films were deposited by reactive sputtering onto Si (native oxide surface) substrates positioned equidistant between two magnetron sources such that the fluxes arrived at oblique angles with respect to the substrate normal. Incident fluxes from two complimentary oblique directions were necessary for the development of biaxial texture. The films displayed a strong [001] out-of-plane orientation with the <110> direction in the film aligned with the incident flux. Biaxial texture improved with increasing oblique angle and film thickness, and was stronger for films deposited with Ne than with Ar. The films displayed a columnar microstructure with grain bundling perpendicular to the projected flux direction, the degree of which increased with oblique angle and thickness. The texture decreased by sputtering at pressures at which the flux of sputtered atoms was thermalized. These results suggested that grain alignment is due to directed impingement of both sputtered atoms and reflected energetic neutrals. The best texture, a {111} phi FWHM of 23°, was obtained in a 4.8 mum thick film deposited at an oblique angle of 56°. MOCVD YSZ thin films were deposited in a vertical cold-wall reactor using Zr(tmhd)4 and Y(tmhd)3 precursors. Fully stabilized YSZ films with 9 mol% could be deposited by controlling the bubbler temperatures. YSZ films on Si substrates displayed a transition at 525°C from surface kinetic limited growth, with an activation energy of 5.5 kJ/mole, to mass transport limited growth. Modifying the reactor by lowering the inlet height and introducing an Ar baffle

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

2006-01-01

Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

Flash vaporization during earthquakes evidenced by gold deposits

NASA Astrophysics Data System (ADS)

Weatherley, Dion K.; Henley, Richard W.

2013-04-01

Much of the world's known gold has been derived from arrays of quartz veins. The veins formed during periods of mountain building that occurred as long as 3 billion years ago, and were deposited by very large volumes of water that flowed along deep, seismically active faults. The veins formed under fluctuating pressures during earthquakes, but the magnitude of the pressure fluctuations and their influence on mineral deposition is not known. Here we use a simple thermo-mechanical piston model to calculate the drop in fluid pressure experienced by a fluid-filled fault cavity during an earthquake. The geometry of the model is constrained using measurements of typical fault jogs, such as those preserved in the Revenge gold deposit in Western Australia, and other gold deposits around the world. We find that cavity expansion generates extreme reductions in pressure that cause the fluid that is trapped in the jog to expand to a very low-density vapour. Such flash vaporization of the fluid results in the rapid co-deposition of silica with a range of trace elements to form gold-enriched quartz veins. Flash vaporization continues as more fluid flows towards the newly expanded cavity, until the pressure in the cavity eventually recovers to ambient conditions. Multiple earthquakes progressively build economic-grade gold deposits.

High-Throughput Characterization of Vapor-Deposited Organic Glasses

NASA Astrophysics Data System (ADS)

Dalal, Shakeel S.

Glasses are non-equilibrium materials which on short timescales behave like solids, and on long timescales betray their liquid-like structure. The most common way of preparing a glass is to cool the liquid faster than it can structurally rearrange. Until recently, most preparation schemes for a glass were considered to result in materials with undifferentiable structure and properties. This thesis utilizes a particular preparation method, physical vapor deposition, in order to prepare glasses of organic molecules with properties otherwise considered to be unobtainable. The glasses are characterized using spectroscopic ellipsometry, both as a dilatometric technique and as a reporter of molecular packing. The results reported here develop ellipsometry as a dilatometric technique on a pair of model glass formers, alpha,alpha,beta-trisnaphthylbenzene and indomethacin. It is found that the molecular orientation, as measured by birefringence, can be tuned by changing the substrate temperature during the deposition. In order to efficiently characterize the properties of vapor-deposited indomethacin as a function of substrate temperature, a high-throughput method is developed to capture the entire interesting range of substrate temperatures in just a few experiments. This high-throughput method is then leveraged to describe molecular mobility in vapor-deposited indomethacin. It is also used to demonstrate that the behavior of organic semiconducting molecules agrees with indomethacin quantitatively, and this agreement has implications for emerging technologies such as light-emitting diodes, photovoltaics and thin-film transistors made from organic molecules.

Chemical vapor deposition for automatic processing of integrated circuits

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1980-01-01

Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

Modeling physical vapor deposition of energetic materials

DOE PAGES

Shirvan, Koroush; Forrest, Eric C.

2018-03-28

Morphology and microstructure of organic explosive films formed using physical vapor deposition (PVD) processes strongly depends on local surface temperature during deposition. Currently, there is no accurate means of quantifying the local surface temperature during PVD processes in the deposition chambers. This study focuses on using a multiphysics computational fluid dynamics tool, STARCCM+, to simulate pentaerythritol tetranitrate (PETN) deposition. The PETN vapor and solid phase were simulated using the volume of fluid method and its deposition in the vacuum chamber on spinning silicon wafers was modeled. The model also included the spinning copper cooling block where the wafers are placedmore » along with the chiller operating with forced convection refrigerant. Implicit time-dependent simulations in two- and three-dimensional were performed to derive insights in the governing physics for PETN thin film formation. PETN is deposited at the rate of 14 nm/s at 142.9 °C on a wafer with an initial temperature of 22 °C. The deposition of PETN on the wafers was calculated at an assumed heat transfer coefficient (HTC) of 400 W/m 2 K. This HTC proved to be the most sensitive parameter in determining the local surface temperature during deposition. Previous experimental work found noticeable microstructural changes with 0.5 mm fused silica wafers in place of silicon during the PETN deposition. This work showed that fused silica slows initial wafer cool down and results in ~10 °C difference for the surface temperature at 500 μm PETN film thickness. It was also found that the deposition surface temperature is insensitive to the cooling power of the copper block due to the copper block's very large heat capacity and thermal conductivity relative to the heat input from the PVD process. Future work should incorporate the addition of local stress during PETN deposition. Lastly, based on simulation results, it is also recommended to investigate the impact of wafer

Modeling physical vapor deposition of energetic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shirvan, Koroush; Forrest, Eric C.

Morphology and microstructure of organic explosive films formed using physical vapor deposition (PVD) processes strongly depends on local surface temperature during deposition. Currently, there is no accurate means of quantifying the local surface temperature during PVD processes in the deposition chambers. This study focuses on using a multiphysics computational fluid dynamics tool, STARCCM+, to simulate pentaerythritol tetranitrate (PETN) deposition. The PETN vapor and solid phase were simulated using the volume of fluid method and its deposition in the vacuum chamber on spinning silicon wafers was modeled. The model also included the spinning copper cooling block where the wafers are placedmore » along with the chiller operating with forced convection refrigerant. Implicit time-dependent simulations in two- and three-dimensional were performed to derive insights in the governing physics for PETN thin film formation. PETN is deposited at the rate of 14 nm/s at 142.9 °C on a wafer with an initial temperature of 22 °C. The deposition of PETN on the wafers was calculated at an assumed heat transfer coefficient (HTC) of 400 W/m 2 K. This HTC proved to be the most sensitive parameter in determining the local surface temperature during deposition. Previous experimental work found noticeable microstructural changes with 0.5 mm fused silica wafers in place of silicon during the PETN deposition. This work showed that fused silica slows initial wafer cool down and results in ~10 °C difference for the surface temperature at 500 μm PETN film thickness. It was also found that the deposition surface temperature is insensitive to the cooling power of the copper block due to the copper block's very large heat capacity and thermal conductivity relative to the heat input from the PVD process. Future work should incorporate the addition of local stress during PETN deposition. Lastly, based on simulation results, it is also recommended to investigate the impact of wafer

Tungsten devices in analytical atomic spectrometry

NASA Astrophysics Data System (ADS)

Hou, Xiandeng; Jones, Bradley T.

2002-04-01

Tungsten devices have been employed in analytical atomic spectrometry for approximately 30 years. Most of these atomizers can be electrically heated up to 3000 °C at very high heating rates, with a simple power supply. Usually, a tungsten device is employed in one of two modes: as an electrothermal atomizer with which the sample vapor is probed directly, or as an electrothermal vaporizer, which produces a sample aerosol that is then carried to a separate atomizer for analysis. Tungsten devices may take various physical shapes: tubes, cups, boats, ribbons, wires, filaments, coils and loops. Most of these orientations have been applied to many analytical techniques, such as atomic absorption spectrometry, atomic emission spectrometry, atomic fluorescence spectrometry, laser excited atomic fluorescence spectrometry, metastable transfer emission spectroscopy, inductively coupled plasma optical emission spectrometry, inductively coupled plasma mass spectrometry and microwave plasma atomic spectrometry. The analytical figures of merit and the practical applications reported for these techniques are reviewed. Atomization mechanisms reported for tungsten atomizers are also briefly summarized. In addition, less common applications of tungsten devices are discussed, including analyte preconcentration by adsorption or electrodeposition and electrothermal separation of analytes prior to analysis. Tungsten atomization devices continue to provide simple, versatile alternatives for analytical atomic spectrometry.

Rapid vapor deposition of highly conformal silica nanolaminates.

PubMed

Hausmann, Dennis; Becker, Jill; Wang, Shenglong; Gordon, Roy G

2002-10-11

Highly uniform and conformal coatings can be made by the alternating exposures of a surface to vapors of two reactants, in a process commonly called atomic layer deposition (ALD). The application of ALD has, however, been limited because of slow deposition rates, with a theoretical maximum of one monolayer per cycle. We show that alternating exposure of a surface to vapors of trimethylaluminum and tris(tert-butoxy)silanol deposits highly conformal layers of amorphous silicon dioxide and aluminum oxide nanolaminates at rates of 12 nanometers (more than 32 monolayers) per cycle. This process allows for the uniform lining or filling of long, narrow holes. We propose that these ALD layers grow by a previously unknown catalytic mechanism that also operates during the rapid ALD of many other metal silicates. This process should allow improved production of many devices, such as trench insulation between transistors in microelectronics, planar waveguides, microelectromechanical structures, multilayer optical filters, and protective layers against diffusion, oxidation, or corrosion.

Research on chemical vapor deposition processes for advanced ceramic coatings

NASA Technical Reports Server (NTRS)

Rosner, Daniel E.

1993-01-01

Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

Infrared analysis of vapor phase deposited tricresylphosphate (TCP)

NASA Technical Reports Server (NTRS)

Morales, Wilfredo; Hanyaloglu, Bengi; Graham, Earl E.

1994-01-01

Infrared transmission was employed to study the formation of a lubricating film deposited on two different substrates at 700 C. The deposit was formed from tricresylphosphate vapors and collected onto a NaCl substrate and on an iron coated NaCl substrate. Analysis of the infrared data suggests that a metal phosphate is formed initially, followed by the formation of organophosphorus polymeric compounds.

Tungsten Contact and Line Resistance Reduction with Advanced Pulsed Nucleation Layer and Low Resistivity Tungsten Treatment

NASA Astrophysics Data System (ADS)

Chandrashekar, Anand; Chen, Feng; Lin, Jasmine; Humayun, Raashina; Wongsenakhum, Panya; Chang, Sean; Danek, Michal; Itou, Takamasa; Nakayama, Tomoo; Kariya, Atsushi; Kawaguchi, Masazumi; Hizume, Shunichi

2010-09-01

This paper describes electrical testing results of new tungsten chemical vapor deposition (CVD-W) process concepts that were developed to address the W contact and bitline scaling issues on 55 nm node devices. Contact resistance (Rc) measurements in complementary metal oxide semiconductor (CMOS) devices indicate that the new CVD-W process for sub-32 nm and beyond - consisting of an advanced pulsed nucleation layer (PNL) combined with low resistivity tungsten (LRW) initiation - produces a 20-30% drop in Rc for diffused NiSi contacts. From cross-sectional bright field and dark field transmission electron microscopy (TEM) analysis, such Rc improvement can be attributed to improved plugfill and larger in-feature W grain size with the advanced PNL+LRW process. More experiments that measured contact resistance for different feature sizes point to favorable Rc scaling with the advanced PNL+LRW process. Finally, 40% improvement in line resistance was observed with this process as tested on 55 nm embedded dynamic random access memory (DRAM) devices, confirming that the advanced PNL+LRW process can be an effective metallization solution for sub-32 nm devices.

Fabrication of (U, Zr) C-fueled/tungsten-clad specimens for irradiation in the Plum Brook Reactor Facility

NASA Technical Reports Server (NTRS)

1972-01-01

Fuel samples, 90UC - 10 ZrC, and chemically vapor deposited tungsten fuel cups were fabricated for the study of the long term dimensional stability and compatibility of the carbide-tungsten fuel-cladding systems under irradiation. These fuel samples and fuel cups were assembled into the fuel pins of two capsules, designated as V-2E and V-2F, for irradiation in NASA Plum Brook Reactor Facility at a fission power density of 172 watts/c.c. and a miximum cladding temperature of 1823 K. Fabrication methods and characteristics of the fuel samples and fuel cups prepared are described.

Development Status of a CVD System to Deposit Tungsten onto UO2 Powder via the WCI6 Process

NASA Technical Reports Server (NTRS)

Mireles, O. R.; Kimberlin, A.; Broadway, J.; Hickman, R.

2014-01-01

Nuclear Thermal Propulsion (NTP) is under development for deep space exploration. NTP's high specific impulse (> 850 second) enables a large range of destinations, shorter trip durations, and improved reliability. W-60vol%UO2 CERMET fuel development efforts emphasize fabrication, performance testing and process optimization to meet service life requirements. Fuel elements must be able to survive operation in excess of 2850 K, exposure to flowing hydrogen (H2), vibration, acoustic, and radiation conditions. CTE mismatch between W and UO2 result in high thermal stresses and lead to mechanical failure as a result UO2 reduction by hot hydrogen (H2) [1]. Improved powder metallurgy fabrication process control and mitigated fuel loss can be attained by coating UO2 starting powders within a layer of high density tungsten [2]. This paper discusses the advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process.

Corrosion processes of physical vapor deposition-coated metallic implants.

PubMed

Antunes, Renato Altobelli; de Oliveira, Mara Cristina Lopes

2009-01-01

Protecting metallic implants from the harsh environment of physiological fluids is essential to guaranteeing successful long-term use in a patient's body. Chemical degradation may lead to the failure of an implant device in two different ways. First, metal ions may cause inflammatory reactions in the tissues surrounding the implant and, in extreme cases, these reactions may inflict acute pain on the patient and lead to loosening of the device. Therefore, increasing wear strength is beneficial to the performance of the metallic implant. Second, localized corrosion processes contribute to the nucleation of fatigue cracks, and corrosion fatigue is the main reason for the mechanical failure of metallic implants. Common biomedical alloys such as stainless steel, cobalt-chrome alloys, and titanium alloys are prone to at least one of these problems. Vapor-deposited hard coatings act directly to improve corrosion, wear, and fatigue resistances of metallic materials. The effectiveness of the corrosion protection is strongly related to the structure of the physical vapor deposition layer. The aim of this paper is to present a comprehensive review of the correlation between the structure of physical vapor deposition layers and the corrosion properties of metallic implants.

Vapor-deposited organic glasses exhibit enhanced stability against photodegradation.

PubMed

Qiu, Yue; Dalal, Shakeel S; Ediger, M D

2018-04-18

Photochemically stable solids are in demand for applications in organic electronics. Previous work has established the importance of the molecular packing environment by demonstrating that different crystal polymorphs of the same compound react at different rates when illuminated. Here we show, for the first time, that different amorphous packing arrangements of the same compound photodegrade at different rates. For these experiments, we utilize the ability of physical vapor deposition to prepare glasses with an unprecedented range of densities and kinetic stabilities. Indomethacin, a pharmaceutical molecule that can undergo photodecarboxylation when irradiated by UV light, is studied as a model system. Photodegradation is assessed through light-induced changes in the mass of glassy thin films due to the loss of CO2, as measured by a quartz crystal microbalance (QCM). Glasses prepared by physical vapor deposition degraded more slowly under UV illumination than did the liquid-cooled glass, with the difference as large as a factor of 2. Resistance to photodegradation correlated with glass density, with the vapor-deposited glasses being up to 1.3% more dense than the liquid-cooled glass. High density glasses apparently limit the local structural changes required for photodegradation.

High Temperature Multilayer Environmental Barrier Coatings Deposited Via Plasma Spray-Physical Vapor Deposition

NASA Technical Reports Server (NTRS)

Harder, Bryan James; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2014-01-01

Si-based ceramic matrix composites (CMCs) require environmental barrier coatings (EBCs) in combustion environments to avoid rapid material loss. Candidate EBC materials have use temperatures only marginally above current technology, but the addition of a columnar oxide topcoat can substantially increase the durability. Plasma Spray-Physical Vapor Deposition (PS-PVD) allows application of these multilayer EBCs in a single process. The PS-PVD technique is a unique method that combines conventional thermal spray and vapor phase methods, allowing for tailoring of thin, dense layers or columnar microstructures by varying deposition conditions. Multilayer coatings were deposited on CMC specimens and assessed for durability under high heat flux and load. Coated samples with surface temperatures ranging from 2400-2700F and 10 ksi loads using the high heat flux laser rigs at NASA Glenn. Coating morphology was characterized in the as-sprayed condition and after thermomechanical loading using electron microscopy and the phase structure was tracked using X-ray diffraction.

Numerical modeling tools for chemical vapor deposition

NASA Technical Reports Server (NTRS)

Jasinski, Thomas J.; Childs, Edward P.

1992-01-01

Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities.

A review-application of physical vapor deposition (PVD) and related methods in the textile industry

NASA Astrophysics Data System (ADS)

Shahidi, Sheila; Moazzenchi, Bahareh; Ghoranneviss, Mahmood

2015-09-01

Physical vapor deposition (PVD) is a coating process in which thin films are deposited by the condensation of a vaporized form of the desired film material onto the substrate. The PVD process is carried out in a vacuum. PVD processes include different types, such as: cathode arc deposition, electron beam physical vapor deposition, evaporative deposition, sputtering, ion plating and enhanced sputtering. In the PVD method, the solid coating material is evaporated by heat or by bombardment with ions (sputtering). At the same time, a reactive gas is also introduced; it forms a compound with the metal vapor and is deposited on the substrate as a thin film with highly adherent coating. Such coatings are used in a wide range of applications such as aerospace, automotive, surgical, medical, dyes and molds for all manner of material processing, cutting tools, firearms, optics, thin films and textiles. The objective of this work is to give a comprehensive description and review of the science and technology related to physical vapor deposition with particular emphasis on their potential use in the textile industry. Physical vapor deposition has opened up new possibilities in the modification of textile materials and is an exciting prospect for usage in textile design and technical textiles. The basic principle of PVD is explained and the major applications, particularly sputter coatings in the modification and functionalization of textiles, are introduced in this research.

Fluid inclusion gas studies, carrock fell tungsten deposit, england: implications for regional exploration

NASA Astrophysics Data System (ADS)

Shepherd, T. J.; Waters, P.

1984-10-01

A fluid inclusion investigation of the Carrock Fell tungsten deposit, Northern England, confirms that the quartz-wolframite-scheelite veins associated with the Caledonian Skiddaw Granite are almost exclusively related to an exocontact hydrothermal system developed at the margin of a local cupola. Fluid circulation, as defined by the spatial variation in temperature and H2O/CO2 ratios for inclusions in vein quartz, reveals a strong structural control. The zone of maximum flow, which extends 0 400 m out from the granite contact, is characterised by high H2O/CO2 ratios and corresponds closely with the known distribution of high-grade oreshoots. Based on the fluid inclusion “gas” signature for the Carrock Fell deposit, a distinction can be made between potentially tungstaniferous quartz veins and those related to Cu-Pb-Zn deposits in the absence of diagnostic ore minerals. Also, a regional survey of quartz veins in the Lake District suggests that at several localities the fluids have a close affinity with those at Carrock Fell. This is interpreted as the high-level, distal expression of tungsten mineralisation at depth. Evidence for similar mineralisation elsewhere in the British Caledonides favours those granites in the paratectonic zones of Ireland and southern Scotland.

Plasma Spray-Physical Vapor Deposition (PS-PVD) of Ceramics for Protective Coatings

NASA Technical Reports Server (NTRS)

Harder, Bryan J.; Zhu, Dongming

2011-01-01

In order to generate advanced multilayer thermal and environmental protection systems, a new deposition process is needed to bridge the gap between conventional plasma spray, which produces relatively thick coatings on the order of 125-250 microns, and conventional vapor phase processes such as electron beam physical vapor deposition (EB-PVD) which are limited by relatively slow deposition rates, high investment costs, and coating material vapor pressure requirements. The use of Plasma Spray - Physical Vapor Deposition (PS-PVD) processing fills this gap and allows thin (< 10 microns) single layers to be deposited and multilayer coatings of less than 100 microns to be generated with the flexibility to tailor microstructures by changing processing conditions. Coatings of yttria-stabilized zirconia (YSZ) were applied to NiCrAlY bond coated superalloy substrates using the PS-PVD coater at NASA Glenn Research Center. A design-of-experiments was used to examine the effects of process variables (Ar/He plasma gas ratio, the total plasma gas flow, and the torch current) on chamber pressure and torch power. Coating thickness, phase and microstructure were evaluated for each set of deposition conditions. Low chamber pressures and high power were shown to increase coating thickness and create columnar-like structures. Likewise, high chamber pressures and low power had lower growth rates, but resulted in flatter, more homogeneous layers

Vapor-deposited porous films for energy conversion

DOEpatents

Jankowski, Alan F.; Hayes, Jeffrey P.; Morse, Jeffrey D.

2005-07-05

Metallic films are grown with a "spongelike" morphology in the as-deposited condition using planar magnetron sputtering. The morphology of the deposit is characterized by metallic continuity in three dimensions with continuous and open porosity on the submicron scale. The stabilization of the spongelike morphology is found over a limited range of the sputter deposition parameters, that is, of working gas pressure and substrate temperature. This spongelike morphology is an extension of the features as generally represented in the classic zone models of growth for physical vapor deposits. Nickel coatings were deposited with working gas pressures up 4 Pa and for substrate temperatures up to 1000 K. The morphology of the deposits is examined in plan and in cross section views with scanning electron microscopy (SEM). The parametric range of gas pressure and substrate temperature (relative to absolute melt point) under which the spongelike metal deposits are produced appear universal for other metals including gold, silver, and aluminum.

Vapor-Deposited Glasses with Long-Range Columnar Liquid Crystalline Order

DOE PAGES

Gujral, Ankit; Gomez, Jaritza; Ruan, Shigang; ...

2017-10-04

Anisotropic molecular packing, particularly in highly ordered liquid crystalline arrangements, has the potential for optimizing performance in organic electronic and optoelectronic applications. Here we show that physical vapor deposition can be used to prepare highly organized glassy solids of discotic liquid crystalline systems. Using grazing incidence X-ray scattering, atomic force microscopy, and UV–vis spectroscopy, we compare three systems: a rectangular columnar liquid crystal, a hexagonal columnar liquid crystal, and a nonmesogen. The packing motifs accessible by vapor deposition are highly organized for the liquid crystalline systems with columns propagating either in-plane or out-of-plane depending upon the substrate temperature during deposition.more » As a result, the structures formed at a given substrate temperature can be understood as resulting from partial equilibration toward the structure of the equilibrium liquid crystal surface during the deposition process.« less

Vapor-Deposited Glasses with Long-Range Columnar Liquid Crystalline Order

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gujral, Ankit; Gomez, Jaritza; Ruan, Shigang

Anisotropic molecular packing, particularly in highly ordered liquid crystalline arrangements, has the potential for optimizing performance in organic electronic and optoelectronic applications. Here we show that physical vapor deposition can be used to prepare highly organized glassy solids of discotic liquid crystalline systems. Using grazing incidence X-ray scattering, atomic force microscopy, and UV–vis spectroscopy, we compare three systems: a rectangular columnar liquid crystal, a hexagonal columnar liquid crystal, and a nonmesogen. The packing motifs accessible by vapor deposition are highly organized for the liquid crystalline systems with columns propagating either in-plane or out-of-plane depending upon the substrate temperature during deposition.more » As a result, the structures formed at a given substrate temperature can be understood as resulting from partial equilibration toward the structure of the equilibrium liquid crystal surface during the deposition process.« less

Chemical vapor deposition of sialon

DOEpatents

Landingham, Richard L.; Casey, Alton W.

1982-01-01

A laminated composite and a method for forming the composite by chemical vapor deposition. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200.degree. C.; and impinging a gas containing in a flowing atmosphere of air N.sub.2, SiCl.sub.4, and AlCl.sub.3 on the surface.

Chemical vapor deposition of sialon

DOEpatents

Landingham, R.L.; Casey, A.W.

A laminated composite and a method for forming the composite by chemical vapor deposition are described. The composite includes a layer of sialon and a material to which the layer is bonded. The method includes the steps of exposing a surface of the material to an ammonia containing atmosphere; heating the surface to at least about 1200/sup 0/C; and impinging a gas containing N/sub 2/, SiCl/sub 4/, and AlCl/sub 3/ on the surface.

Investigation of thermal and hot-wire chemical vapor deposition copper thin films on TiN substrates using CupraSelect as precursor.

PubMed

Papadimitropoulos, G; Davazoglou, D

2011-09-01

Copper films were deposited on oxidized Si substrates covered with TiN using a novel chemical vapor deposition reactor in which reactions were assisted by a heated tungsten filament (hot-wire CVD, HWCVD). Liquid at room temperature hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) was directly injected into the reactor with the aid of a direct-liquid injection (DLI) system using N2 as carrier gas. The deposition rates of HWCVD Cu films obtained on TiN covered substrates were found to increase with filament temperature (65 and 170 degrees C were tested). The resistivities of HWCVD Cu films were found to be higher than for thermally grown films due to the possible presence of impurities into the Cu films from the incomplete dissociation of the precursor and W impurities caused by the presence of the filament. For HWCVD films grown at a filament temperature of 170 degrees C, smaller grains are formed than at 65 degrees C as shown from the taken SEM micrographs. XRD diffractograms taken on Cu films deposited on TiN could not reveal the presence of W compounds originating from the filament because the relative peak was masked by the TiN [112] peak.

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

75 FR 14628 - Notice of Commission Decision

Federal Register 2010, 2011, 2012, 2013, 2014

2010-03-26

... complete, third recited step of claim 1, i.e., ``depositing a tungsten layer by chemical vapor deposition, said tungsten layer covering said glue layer on said dielectric and said exposed material.'' The... to the third step only includes the step of ``depositing a tungsten layer by chemical vapor...

High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

DOE PAGES

Vohra, Yogesh K.; Samudrala, Gopi K.; Moore, Samuel L.; ...

2015-06-10

Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two stage diamond anvil with 300 μm culet and with a CVD diamond second stage ofmore » 50 μm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86 GPa. Furthermore, the micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86 GPa.« less

Combined flame and solution synthesis of nanoscale tungsten-oxide and zinc/tin-oxide heterostructures

NASA Astrophysics Data System (ADS)

Dong, Zhizhong; Huo, Di; Kear, Bernard H.; Tse, Stephen D.

2015-12-01

Heterostructures of tungsten-oxide nanowires decorated with zinc/tin-oxide nanostructures are synthesized via a combined flame and solution synthesis approach. Vertically well-aligned tungsten-oxide nanowires are grown on a tungsten substrate by a flame synthesis method. Here, tetragonal WO2.9 nanowires (diameters of 20-50 nm, lengths >10 μm, and coverage density of 109-1010 cm-2) are produced by the vapor-solid mechanism at 1720 K. Various kinds of Zn/Sn-oxide nanostructures are grown or deposited on the WO2.9 nanowires by adjusting the Sn2+ : Zn2+ molar ratio in an aqueous ethylenediamine solution at 65 °C. With WO2.9 nanowires serving as the base structures, sequential growth or deposition on them of hexagonal ZnO nanoplates, Zn2SnO4 nanocubes, and SnO2 nanoparticles are attained for Sn2+ : Zn2+ ratios of 0 : 1, 1 : 10, and 10 : 1, respectively, along with different saturation conditions. High-resolution transmission electron microscopy of the interfaces at the nanoheterojunctions shows abrupt interfaces for ZnO/WO2.9 and Zn2SnO4/WO2.9, despite lattice mismatches of >20%.

Vaporization of a mixed precursors in chemical vapor deposition for YBCO films

NASA Technical Reports Server (NTRS)

Zhou, Gang; Meng, Guangyao; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

1995-01-01

Single phase YBa2Cu3O7-delta thin films with T(c) values around 90 K are readily obtained by using a single source chemical vapor deposition technique with a normal precursor mass transport. The quality of the films is controlled by adjusting the carrier gas flow rate and the precursor feed rate.

The Use of Ion Vapor Deposited Aluminum (IVD) for the Space Shuttle Solid Rocket Booster (SRB)

NASA Technical Reports Server (NTRS)

Novak, Howard L.

2003-01-01

This viewgraph representation provides an overview of the use of ion vapor deposited aluminum (IVD) for use in the Space Shuttle Solid Rocket Booster (SRB). Topics considered include: schematics of ion vapor deposition system, production of ion vapor deposition system, IVD vs. cadmium coated drogue ratchets, corrosion exposure facilities and tests, seawater immersion facilities and tests and continued research and development issues.

Vapor deposition in basaltic stalactites, Kilauea, Hawaii

NASA Astrophysics Data System (ADS)

Baird, A. K.; Mohrig, D. C.; Welday, E. E.

Basaltic stalacties suspended from the ceiling of a large lava tube at Kilauea, Hawaii, have totally enclosed vesicles whose walls are covered with euhedral FeTi oxide and silicate crystals. The walls of the vesicles and the exterior surfaces of stalactites are Fe and Ti enriched and Si depleted compared to common basalt. Minerals in vesicles have surface ornamentations on crystal faces which include alkali-enriched, aluminosilicate glass(?) hemispheres. No sulfide-, chloride-, fluoride-, phosphate- or carbonate-bearing minerals are present. Minerals in the stalactites must have formed by deposition from an iron oxide-rich vapor phase produced by the partial melting and vaporization of wall rocks in the tube.

Fabrication of solid oxide fuel cell by electrochemical vapor deposition

DOEpatents

Riley, B.; Szreders, B.E.

1988-04-26

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (/approximately/1100/degree/ /minus/ 1300/degree/C) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20--50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Fabrication of solid oxide fuel cell by electrochemical vapor deposition

DOEpatents

Brian, Riley; Szreders, Bernard E.

1989-01-01

In a high temperature solid oxide fuel cell (SOFC), the deposition of an impervious high density thin layer of electrically conductive interconnector material, such as magnesium doped lanthanum chromite, and of an electrolyte material, such as yttria stabilized zirconia, onto a porous support/air electrode substrate surface is carried out at high temperatures (approximately 1100.degree.-1300.degree. C.) by a process of electrochemical vapor deposition. In this process, the mixed chlorides of the specific metals involved react in the gaseous state with water vapor resulting in the deposit of an impervious thin oxide layer on the support tube/air electrode substrate of between 20-50 microns in thickness. An internal heater, such as a heat pipe, is placed within the support tube/air electrode substrate and induces a uniform temperature profile therein so as to afford precise and uniform oxide deposition kinetics in an arrangement which is particularly adapted for large scale, commercial fabrication of SOFCs.

Chemical vapor deposition of group IIIB metals

DOEpatents

Erbil, Ahmet

1989-01-01

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula (I) ##STR1## where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula I is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula I and a heat decomposable tellurium compound under nonoxidizing conditions.

Chemical vapor deposition of group IIIB metals

DOEpatents

Erbil, A.

1989-11-21

Coatings of Group IIIB metals and compounds thereof are formed by chemical vapor deposition, in which a heat decomposable organometallic compound of the formula given in the patent where M is a Group IIIB metal, such as lanthanum or yttrium and R is a lower alkyl or alkenyl radical containing from 2 to about 6 carbon atoms, with a heated substrate which is above the decomposition temperature of the organometallic compound. The pure metal is obtained when the compound of the formula 1 is the sole heat decomposable compound present and deposition is carried out under nonoxidizing conditions. Intermetallic compounds such as lanthanum telluride can be deposited from a lanthanum compound of formula 1 and a heat decomposable tellurium compound under nonoxidizing conditions.

Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization

DOEpatents

O'Brien, Kevin C [San Ramon, CA; Letts, Stephan A [San Ramon, CA; Spadaccini, Christopher M [Oakland, CA; Morse, Jeffrey C [Pleasant Hill, CA; Buckley, Steven R [Modesto, CA; Fischer, Larry E [Los Gatos, CA; Wilson, Keith B [San Ramon, CA

2012-01-24

A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

Preparation of membranes using solvent-less vapor deposition followed by in-situ polymerization

DOEpatents

O'Brien, Kevin C [San Ramon, CA; Letts, Stephan A [San Ramon, CA; Spadaccini, Christopher M [Oakland, CA; Morse, Jeffrey C [Pleasant Hill, CA; Buckley, Steven R [Modesto, CA; Fischer, Larry E [Los Gatos, CA; Wilson, Keith B [San Ramon, CA

2010-07-13

A system of fabricating a composite membrane from a membrane substrate using solvent-less vapor deposition followed by in-situ polymerization. A first monomer and a second monomer are directed into a mixing chamber in a deposition chamber. The first monomer and the second monomer are mixed in the mixing chamber providing a mixed first monomer and second monomer. The mixed first monomer and second monomer are solvent-less vapor deposited onto the membrane substrate in the deposition chamber. The membrane substrate and the mixed first monomer and second monomer are heated to produce in-situ polymerization and provide the composite membrane.

Water-Assisted Vapor Deposition of PEDOT Thin Film.

PubMed

Goktas, Hilal; Wang, Xiaoxue; Ugur, Asli; Gleason, Karen K

2015-07-01

The synthesis and characterization of poly(3,4-ethylenedioxythiophene) (PEDOT) using water-assisted vapor phase polymerization (VPP) and oxidative chemical vapor deposition (oCVD) are reported. For the VPP PEDOT, the oxidant, FeCl3 , is sublimated onto the substrate from a heated crucible in the reactor chamber and subsequently exposed to 3,4-ethylenedioxythiophene (EDOT) monomer and water vapor in the same reactor. The oCVD PEDOT was produced by introducing the oxidant, EDOT monomer, and water vapor simultaneously to the reactor. The enhancement of doping and crystallinity is observed in the water-assisted oCVD thin films. The high doping level observed at UV-vis-NIR spectra for the oCVD PEDOT, suggests that water acts as a solubilizing agent for oxidant and its byproducts. Although the VPP produced PEDOT thin films are fully amorphous, their conductivities are comparable with that of the oCVD produced ones. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

DOEpatents

Lackey, Jr., Walter J.; Caputo, Anthony J.

1986-01-01

A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Imparting passivity to vapor deposited magnesium alloys

NASA Astrophysics Data System (ADS)

Wolfe, Ryan C.

Magnesium has the lowest density of all structural metals. Utilization of low density materials is advantageous from a design standpoint, because lower weight translates into improved performance of engineered products (i.e., notebook computers are more portable, vehicles achieve better gas mileage, and aircraft can carry more payload). Despite their low density and high strength to weight ratio, however, the widespread implementation of magnesium alloys is currently hindered by their relatively poor corrosion resistance. The objective of this research dissertation is to develop a scientific basis for the creation of a corrosion resistant magnesium alloy. The corrosion resistance of magnesium alloys is affected by several interrelated factors. Among these are alloying, microstructure, impurities, galvanic corrosion effects, and service conditions, among others. Alloying and modification of the microstructure are primary approaches to controlling corrosion. Furthermore, nonequilibrium alloying of magnesium via physical vapor deposition allows for the formation of single-phase magnesium alloys with supersaturated concentrations of passivity-enhancing elements. The microstructure and surface morphology is also modifiable during physical vapor deposition through the variation of evaporation power, pressure, temperature, ion bombardment, and the source-to-substrate distance. Aluminum, titanium, yttrium, and zirconium were initially chosen as candidates likely to impart passivity on vapor deposited magnesium alloys. Prior to this research, alloys of this type have never before been produced, much less studied. All of these metals were observed to afford some degree of corrosion resistance to magnesium. Due to the especially promising results from nonequilibrium alloying of magnesium with yttrium and titanium, the ternary magnesium-yttrium-titanium system was investigated in depth. While all of the alloys are lustrous, surface morphology is observed under the scanning

Combinatorial Characterization of TiO2 Chemical Vapor Deposition Utilizing Titanium Isopropoxide.

PubMed

Reinke, Michael; Ponomarev, Evgeniy; Kuzminykh, Yury; Hoffmann, Patrik

2015-07-13

The combinatorial characterization of the growth kinetics in chemical vapor deposition processes is challenging because precise information about the local precursor flow is usually difficult to access. In consequence, combinatorial chemical vapor deposition techniques are utilized more to study functional properties of thin films as a function of chemical composition, growth rate or crystallinity than to study the growth process itself. We present an experimental procedure which allows the combinatorial study of precursor surface kinetics during the film growth using high vacuum chemical vapor deposition. As consequence of the high vacuum environment, the precursor transport takes place in the molecular flow regime, which allows predicting and modifying precursor impinging rates on the substrate with comparatively little experimental effort. In this contribution, we study the surface kinetics of titanium dioxide formation using titanium tetraisopropoxide as precursor molecule over a large parameter range. We discuss precursor flux and temperature dependent morphology, crystallinity, growth rates, and precursor deposition efficiency. We conclude that the surface reaction of the adsorbed precursor molecules comprises a higher order reaction component with respect to precursor surface coverage.

Modifying hydrogen-bonded structures by physical vapor deposition: 4-methyl-3-heptanol

NASA Astrophysics Data System (ADS)

Young-Gonzales, A. R.; Guiseppi-Elie, A.; Ediger, M. D.; Richert, R.

2017-11-01

We prepared films of 4-methyl-3-heptanol by vapor depositing onto substrates held at temperatures between Tdep = 0.6Tg and Tg, where Tg is the glass transition temperature. Using deposition rates between 0.9 and 6.0 nm/s, we prepared films about 5 μm thick and measured the dielectric properties via an interdigitated electrode cell onto which films were deposited. Samples prepared at Tdep = Tg display the dielectric behavior of the ordinary supercooled liquid. Films deposited at lower deposition temperatures show a high dielectric loss upon heating toward Tg, which decreases by a factor of about 12 by annealing at Tg = 162 K. This change is consistent with either a drop of the Kirkwood correlation factor, gk, by a factor of about 10, or an increase in the dielectric relaxation times, both being indicative of changes toward ring-like hydrogen-bonded structure characteristic of the ordinary liquid. We rationalize the high dielectric relaxation amplitude in the vapor deposited glass by suggesting that depositions at low temperature provide insufficient time for molecules to form ring-like supramolecular structures for which dipole moments cancel. Surprisingly, above Tg of the ordinary liquid, these vapor deposited films fail to completely recover the dielectric properties of the liquid obtained by supercooling. Instead, the dielectric relaxation remains slower and its amplitude much higher than that of the equilibrium liquid state, indicative of a structure that differs from the equilibrium liquid up to at least Tg + 40 K.

Reaction mechanism of electrochemical-vapor deposition of yttria-stabilized zirconia film

NASA Astrophysics Data System (ADS)

Sasaki, Hirokazu; Yakawa, Chiori; Otoshi, Shoji; Suzuki, Minoru; Ippommatsu, Masamichi

1993-10-01

The reaction mechanism for electrochemical-vapor deposition of yttria-stabilized zirconia was studied. Yttria-stabilized zirconia films were deposited on porous La(Sr)MnOx using the electrochemical-vapor-deposition process. The distribution of yttria concentration through the film was investigated by means of secondary-ion-mass spectroscopy and x-ray microanalysis and found to be nearly constant. The deposition rate was approximately proportional to the minus two-thirds power of the film thickness, the one-third power of the partial pressure of ZrCl4/YCl3 mixed gas, and the two-thirds power of the product of the reaction temperature and the electronic conductivity of yttria-stabilized zirconia film. These experimental results were explained by a model for electron transport through the YSZ film and reaction between the surface oxygen and the metal chloride on the chloride side of the film, both of which affect the deposition rate. If the film thickness is very small, the deposition rate is thought to be controlled by the surface reaction step. On the other hand, if large, the electron transport step is rate controlling.

Low temperature junction growth using hot-wire chemical vapor deposition

DOEpatents

Wang, Qi; Page, Matthew; Iwaniczko, Eugene; Wang, Tihu; Yan, Yanfa

2014-02-04

A system and a process for forming a semi-conductor device, and solar cells (10) formed thereby. The process includes preparing a substrate (12) for deposition of a junction layer (14); forming the junction layer (14) on the substrate (12) using hot wire chemical vapor deposition; and, finishing the semi-conductor device.

Chemical Vapor Deposition of Multispectral Domes

DTIC Science & Technology

1975-04-01

optical testing, was also cut out as indicated in Figure 10. The image spoiling measureinents were performed at the Air Force Avionics Laboratory on...AD-A014 362 CHEMICAL VAPOR DEPOSITION OF MULTISPECTRAL DOMES B. A. diBenedetto, et al Raytheon Company Prepared for: Air Force Materials Laboratory...Approved for public release; distribution unlimited. ) F) .• •~~EP 7 ’+ i.i AIR FORCE MATERIALS LABORATORY AIR FORCE SYSTEMS COMMAND WRIGHT-PATrERSON AIR

Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

DOEpatents

Liu, David K.

1992-01-01

Method and apparatus for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure.

Low temperature photochemical vapor deposition of alloy and mixed metal oxide films

DOEpatents

Liu, D.K.

1992-12-15

Method and apparatus are described for formation of an alloy thin film, or a mixed metal oxide thin film, on a substrate at relatively low temperatures. Precursor vapor(s) containing the desired thin film constituents is positioned adjacent to the substrate and irradiated by light having wavelengths in a selected wavelength range, to dissociate the gas(es) and provide atoms or molecules containing only the desired constituents. These gases then deposit at relatively low temperatures as a thin film on the substrate. The precursor vapor(s) is formed by vaporization of one or more precursor materials, where the vaporization temperature(s) is selected to control the ratio of concentration of metals present in the precursor vapor(s) and/or the total precursor vapor pressure. 7 figs.

Directed Vapor Deposition: Low Vacuum Materials Processing Technology

DTIC Science & Technology

2000-01-01

constituent A Crucible with constituent B Electron beam AB Substrate Deposit Flux of A Flux of B Composition "Skull" melt Electron beam Coolant Copper ... crucible Evaporation target Evaporant material Vapor flux Fibrous Coating Surface a) b) sharp (0.5 mm) beam focussing. When used with multisource

Chemical Vapor Deposition of Aluminum Oxide Thin Films

ERIC Educational Resources Information Center

Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

2010-01-01

Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

NASA Technical Reports Server (NTRS)

Cardelino, Carlos

1999-01-01

A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

Magmatic-vapor expansion and the formation of high-sulfidation gold deposits: Chemical controls on alteration and mineralization

USGS Publications Warehouse

Henley, R.W.; Berger, B.R.

2011-01-01

Large bulk-tonnage high-sulfidation gold deposits, such as Yanacocha, Peru, are the surface expression of structurally-controlled lode gold deposits, such as El Indio, Chile. Both formed in active andesite-dacite volcanic terranes. Fluid inclusion, stable isotope and geologic data show that lode deposits formed within 1500. m of the paleo-surface as a consequence of the expansion of low-salinity, low-density magmatic vapor with very limited, if any, groundwater mixing. They are characterized by an initial 'Sulfate' Stage of advanced argillic wallrock alteration ?? alunite commonly with intense silicification followed by a 'Sulfide' Stage - a succession of discrete sulfide-sulfosalt veins that may be ore grade in gold and silver. Fluid inclusions in quartz formed during wallrock alteration have homogenization temperatures between 100 and over 500 ??C and preserve a record of a vapor-rich environment. Recent data for El Indio and similar deposits show that at the commencement of the Sulfide Stage, 'condensation' of Cu-As-S sulfosalt melts with trace concentrations of Sb, Te, Bi, Ag and Au occurred at > 600 ??C following pyrite deposition. Euhedral quartz crystals were simultaneously deposited from the vapor phase during crystallization of the vapor-saturated melt occurs to Fe-tennantite with progressive non-equilibrium fractionation of heavy metals between melt-vapor and solid. Vugs containing a range of sulfides, sulfosalts and gold record the changing composition of the vapor. Published fluid inclusion and mineralogical data are reviewed in the context of geological relationships to establish boundary conditions through which to trace the expansion of magmatic vapor from source to surface and consequent alteration and mineralization. Initially heat loss from the vapor is high resulting in the formation of acid condensate permeating through the wallrock. This Sulfate Stage alteration effectively isolates the expansion of magmatic vapor in subsurface fracture arrays

Explosion symmetry improvement of polyimide-coated tungsten wire in vacuum on negative discharge facility

NASA Astrophysics Data System (ADS)

Li, Mo; Wu, Jian; Lu, Yihan; Li, Xingwen; Li, Yang; Qiu, Mengtong

2018-01-01

Tungsten wire explosion is very asymmetric when fast current rate and insulated coatings are both applied on negative discharge facility using a 24-mm-diameter cathode geometry, which is commonly used on mega-ampere facilities. It is inferred, based on an analytical treatment of the guiding center drift and COMSOL simulations, that the large negative radial electric field causes early voltage breakdown and terminates energy deposition into the wire core on the anode side of the wire. After the anode side is short circuited, the radial electric field along the wire surface on the cathode side will change its polarity and thus leading to additional energy deposition into the wire core. This change causes ˜10 times larger energy deposition and ˜14 times faster explosion velocity in the cathode side than the anode side. In order to reduce this asymmetry, a hollow cylindrical cathode geometry was used to reverse the polarity of radial electric field and was optimized to use on multi-MA facilities. In this case, fully vaporized polyimide-coated tungsten wire with great symmetry improvement was achieved with energy deposition of ˜8.8 eV/atom. The atomic and electronic density distributions for the two different load geometries were obtained by the double-wavelength measurement.

Hydrodynamic and Chemical Modeling of a Chemical Vapor Deposition Reactor for Zirconia Deposition

NASA Astrophysics Data System (ADS)

Belmonte, T.; Gavillet, J.; Czerwiec, T.; Ablitzer, D.; Michel, H.

1997-09-01

Zirconia is deposited on cylindrical substrates by flowing post-discharge enhanced chemical vapor deposition. In this paper, a two dimensional hydrodynamic and chemical modeling of the reactor is described for given plasma characteristics. It helps in determining rate constants of the synthesis reaction of zirconia in gas phase and on the substrate which is ZrCl4 hydrolysis. Calculated deposition rate profiles are obtained by modeling under various conditions and fits with a satisfying accuracy the experimental results. The role of transport processes and the mixing conditions of excited gases with remaining ones are studied. Gas phase reaction influence on the growth rate is also discussed.

Direct synthesis of large area graphene on insulating substrate by gallium vapor-assisted chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Murakami, Katsuhisa, E-mail: k.murakami@bk.tsukuba.ac.jp; Hiyama, Takaki; Kuwajima, Tomoya

2015-03-02

A single layer of graphene with dimensions of 20 mm × 20 mm was grown directly on an insulating substrate by chemical vapor deposition using Ga vapor catalysts. The graphene layer showed highly homogeneous crystal quality over a large area on the insulating substrate. The crystal quality of the graphene was measured by Raman spectroscopy and was found to improve with increasing Ga vapor density on the reaction area. High-resolution transmission electron microscopy observations showed that the synthesized graphene had a perfect atomic-scale crystal structure within its grains, which ranged in size from 50 nm to 200 nm.

Particle formation in SiOx film deposition by low frequency plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yamaguchi, Tomoyo; Sakamoto, Naoshi; Shimozuma, Mitsuo; Yoshino, Masaki; Tagashira, Hiroaki

1998-01-01

Dust particle formation dynamics in the process of SiOx film deposition from a SiH4 and N2O gas mixture by a low frequency plasma enhanced chemical vapor deposition have been investigated using scanning electron microscopy and laser light scattering. The deposited films are confirmed to be SiOx from the measurements of Auger electron spectroscopy, x-ray photoelectron spectroscopy, and Fourier transform infrared spectroscopy. It is observed by scanning electron microscopy that particles are deposited on Si substrate at the plasma power frequency f=5 kHz and above both with and without substrate heating (400 °C), while no particle is deposited below f=1 kHz. Moreover, the laser light scattering indicates that particles are generated at the plasma power frequency of f=3 kHz and above in the gas phase, and that they are not generated in the gas phase at below f=3 kHz. Properties (the refractive index, resistivity, and Vickers hardness) of the films with particles are inferior to those of the films without particles. This article has revealed experimentally the effect of plasma power frequency on SiOx particle formation and makes a contribution to the explication of the particle formation mechanism. We suggest that high-quality film deposition with the low frequency plasma enhanced chemical vapor deposition method is attained at f=1 kHz or less without substrate heating.

Chemical vapor deposition of fluorine-doped zinc oxide

DOEpatents

Gordon, Roy G.; Kramer, Keith; Liang, Haifan

2000-06-06

Fims of fluorine-doped zinc oxide are deposited from vaporized precursor compounds comprising a chelate of a dialkylzinc, such as an amine chelate, an oxygen source, and a fluorine source. The coatings are highly electrically conductive, transparent to visible light, reflective to infrared radiation, absorbing to ultraviolet light, and free of carbon impurity.

Influence of Molecular Shape on the Thermal Stability and Molecular Orientation of Vapor-Deposited Organic Semiconductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Walters, Diane M; Antony, Lucas; de Pablo, Juan

High thermal stability and anisotropic molecular orientation enhance the performance of vapor-deposited organic semiconductors, but controlling these properties is a challenge in amorphous materials. To understand the influence of molecular shape on these properties, vapor-deposited glasses of three disk-shaped molecules were prepared. For all three systems, enhanced thermal stability is observed for glasses prepared over a wide range of substrate temperatures and anisotropic molecular orientation is observed at lower substrate temperatures. For two of the disk-shaped molecules, atomistic simulations of thin films were also performed and anisotropic molecular orientation was observed at the equilibrium liquid surface. We find that themore » structure and thermal stability of these vapor-deposited glasses results from high surface mobility and partial equilibration toward the structure of the equilibrium liquid surface during the deposition process. For the three molecules studied, molecular shape is a dominant factor in determining the anisotropy of vapor-deposited glasses.« less

Lattice Matched Iii-V IV Semiconductor Heterostructures: Metalorganic Chemical Vapor Deposition and Remote Plasma Enhanced Chemical Vapor Deposition.

NASA Astrophysics Data System (ADS)

Choi, Sungwoo

1992-01-01

This thesis describes the growth and characterization of wide gap III-V compound semiconductors such as aluminum gallium arsenide (Al_{rm x} Ga_{rm 1-x}As), gallium nitride (GaN), and gallium phosphide (GaP), deposited by the metalorganic chemical vapor deposition (MOCVD) and remote plasma enhanced chemical vapor deposition (Remote PECVD). In the first part of the thesis, the optimization of GaAs and Al_{rm x}Ga _{rm 1-x}As hetero -epitaxial layers on Ge substrates is described in the context of the application in the construction of cascade solar cells. The emphasis on this study is on the trade-offs in the choice of the temperature related to increasing interdiffusion/autodoping and increasing perfection of the epilayer with increasing temperature. The structural, chemical, optical, and electrical properties of the heterostructures are characterized by x-ray rocking curve measurement, scanning electron microscopy (SEM), electron beam induced current (EBIC), cross-sectional transmission electron microscopy (X-TEM), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and steady-state and time-resolved photoluminescence (PL). Based on the results of this work the optimum growth temperature is 720^circC. The second part of the thesis describes the growth of GaN and GaP layers on silicon and sapphire substrates and the homoepitaxy of GaP by remote PECVD. I have designed and built an ultra high vacuum (UHV) deposition system which includes: the gas supply system, the pumping system, the deposition chamber, the load-lock chamber, and the waste disposal system. The work on the deposition of GaN on Si and sapphire focuses onto the understanding of the growth kinetics. In addition, Auger electron spectroscopy (AES) for surface analysis, x-ray diffraction methods and microscopic analyses using SEM and TEM for structural characterization, infrared (IR) and ultraviolet (UV) absorption measurements for optical characterization, and electrical characterization results

Model for the Vaporization of Mixed Organometallic Compounds in the Metalorganic Chemical Vapor Deposition of High Temperature Superconducting Films

NASA Technical Reports Server (NTRS)

Meng, Guangyao; Zhou, Gang; Schneider, Roger L.; Sarma, Bimal K.; Levy, Moises

1993-01-01

A model of the vaporization and mass transport of mixed organometallics from a single source for thin film metalorganic chemical vapor deposition is presented. A stoichiometric gas phase can be obtained from a mixture of the organometallics in the desired mole ratios, in spite of differences in the volatilities of the individual compounds. Proper film composition and growth rates are obtained by controlling the velocity of a carriage containing the organometallics through the heating zone of a vaporizer.

Preventing kinetic roughening in physical vapor-phase-deposited films.

PubMed

Vasco, E; Polop, C; Sacedón, J L

2008-01-11

The growth kinetics of the mostly used physical vapor-phase deposition techniques -molecular beam epitaxy, sputtering, flash evaporation, and pulsed laser deposition-is investigated by rate equations with the aim of testing their suitability for the preparation of ultraflat ultrathin films. The techniques are studied in regard to the roughness and morphology during early stages of growth. We demonstrate that pulsed laser deposition is the best technique for preparing the flattest films due to two key features [use of (i) a supersaturated pulsed flux of (ii) hyperthermal species] that promote a kinetically limited Ostwald ripening mechanism.

Vapor deposition on doublet airfoil substrates: Control of coating thickness and microstructure

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rodgers, Theron M.; Zhao, Hengbei; Wadley, Haydn N. G., E-mail: haydn@virginia.edu

Gas jet assisted vapor deposition processes for depositing coatings are conducted at higher pressures than conventional physical vapor deposition methods, and have shown promise for coating complex shaped substrates including those with non-line-of-sight (NLS) regions on their surface. These regions typically receive vapor atoms at a lower rate and with a wider incident angular distribution than substrate regions in line-of-sight (LS) of the vapor source. To investigate the coating of such substrates, the thickness and microstructure variation along the inner (curved) surfaces of a model doublet airfoil containing both LS and NLS regions has been investigated. Results from atomistic simulationsmore » and experiments confirm that the coating's thickness is thinner in flux-shadowed regions than in other regions for all the coating processes investigated. They also indicated that the coatings columnar microstructure and pore volume fraction vary with surface location through the LS to NLS transition zone. A substrate rotation strategy for optimizing the thickness over the entire doublet airfoil surface was investigated, and led to the identification of a process that resulted in only small variation of coating thickness, columnar growth angle, and pore volume fraction on all doublet airfoil surfaces.« less

Plasma Spray-PVD: A New Thermal Spray Process to Deposit Out of the Vapor Phase

NASA Astrophysics Data System (ADS)

von Niessen, Konstantin; Gindrat, Malko

2011-06-01

Plasma spray-physical vapor deposition (PS-PVD) is a low pressure plasma spray technology recently developed by Sulzer Metco AG (Switzerland). Even though it is a thermal spray process, it can deposit coatings out of the vapor phase. The basis of PS-PVD is the low pressure plasma spraying (LPPS) technology that has been well established in industry for several years. In comparison to conventional vacuum plasma spraying (VPS) or low pressure plasma spraying (LPPS), the new proposed process uses a high energy plasma gun operated at a reduced work pressure of 0.1 kPa (1 mbar). Owing to the high energy plasma and further reduced work pressure, PS-PVD is able to deposit a coating not only by melting the feed stock material which builds up a layer from liquid splats but also by vaporizing the injected material. Therefore, the PS-PVD process fills the gap between the conventional physical vapor deposition (PVD) technologies and standard thermal spray processes. The possibility to vaporize feedstock material and to produce layers out of the vapor phase results in new and unique coating microstructures. The properties of such coatings are superior to those of thermal spray and electron beam-physical vapor deposition (EB-PVD) coatings. In contrast to EB-PVD, PS-PVD incorporates the vaporized coating material into a supersonic plasma plume. Owing to the forced gas stream of the plasma jet, complex shaped parts such as multi-airfoil turbine vanes can be coated with columnar thermal barrier coatings using PS-PVD. Even shadowed areas and areas which are not in the line of sight of the coating source can be coated homogeneously. This article reports on the progress made by Sulzer Metco in developing a thermal spray process to produce coatings out of the vapor phase. Columnar thermal barrier coatings made of Yttria-stabilized Zircona (YSZ) are optimized to serve in a turbine engine. This process includes not only preferable coating properties such as strain tolerance and erosion

Results of Uranium Dioxide-Tungsten Irradiation Test and Post-Test Examination

NASA Technical Reports Server (NTRS)

Collins, J. F.; Debogdan, C. E.; Diianni, D. C.

1973-01-01

A uranium dioxide (UO2) fueled capsule was fabricated and irradiated in the NASA Plum Brook Reactor Facility. The capsule consisted of two bulk UO2 specimens clad with chemically vapor deposited tungsten (CVD W) 0.762 and 0.1016 cm (0.030-and 0.040-in.) thick, respectively. The second specimen with 0.1016-cm (0.040-in.) thick cladding was irradiated at temperature for 2607 hours, corresponding to an average burnup of 1.516 x 10 to the 20th power fissions/cu cm. Postirradiation examination showed distortion in the bottom end cap, failure of the weld joint, and fracture of the central vent tube. Diametral growth was 1.3 percent. No evidence of gross interaction between CVD tungsten or arc-cast tungsten cladding and the UO2 fuel was observed. Some of the fission gases passed from the fuel cavity to the gas surrounding the fuel specimen via the vent tube and possibly the end-cap weld failure. Whether the UO2 loss rates through the vent tube were within acceptable limits could not be determined in view of the end-cap weld failure.

Room temperature deposition of silicon nanodot clusters by plasma-enhanced chemical vapor deposition.

PubMed

Kim, Jae-Kwan; Kim, Jun Young; Yoon, Jae-Sik; Lee, Ji-Myon

2013-10-01

The formation of nanometer-scale (ns)-Si dots and clusters on p-GaN layers has been studied by controlling the early stage of growth during plasma-enhanced chemical vapor deposition (PECVD) at room temperature. We found that ns-Si dots and clusters formed on the p-GaN surface, indicating that growth was the Volmer-Weber mode. The deposition parameters such as radio frequency (RF) power and processing time mainly influenced the size of the ns-Si dots (40 nm-160 nm) and the density of the ns-Si dot clusters.

The influence of filament temperature and oxygen concentration on tungsten oxide nanostructures by hot filament metal oxide deposition

NASA Astrophysics Data System (ADS)

Lou, J.; Ye, B. J.; Weng, H. M.; Du, H. J.; Wang, Z. B.; Wang, X. P.

2008-08-01

Tungsten oxide (WOx) nanostructures were prepared by a hot filament chemical vapour deposition system and the temperature of the hot tungsten filaments was changed by steps of degrees. The morphology and average growth rate were indicated by scanning electron microscopy which showed that the morphology was highly related to the filament temperature (Tf) and the distance between the filaments and the polished Si (1 0 0) substrates (df). The influence of Tf on the crystalline nature was studied by x-ray diffraction and Raman spectroscopy. The evolution of stoichiometry and types of defects was indicated by x-ray photoelectron spectroscopy and slow positron implantation spectroscopy. When Tf was up to 1750 °C, tungsten oxide nanostructure was synthesized. A turning point of Tf was found at which the nature of crystallinity and of stoichiometry was the best. As Tf increased to 2100 °C or df decreased, the film crystallinity decreased; correspondingly, the component ratio of stoichiometry WO3 decreased and lots of vacancy agglomerates were present. In order to develop the chemical phase from substoichiometry to stoichiometry, the oxygen gas concentration in the mixture gas during deposition should be raised to an appropriate level.

The Metastable Persistence of Vapor-Deposited Amorphous Ice at Anomalously High Temperatures

NASA Technical Reports Server (NTRS)

Blake, David F.; Jenniskens, Peter; DeVincenzi, Donald L. (Technical Monitor)

1995-01-01

Studies of the gas release, vaporization behavior and infrared (IR) spectral properties of amorphous and crystalline water ice have direct application to cometary and planetary outgassing phenomena and contribute to an understanding of the physical properties of astrophysical ices. Several investigators report anomalous phenomena related to the warming of vapor-deposited astrophysical ice analogs. However gas release, ice volatilization and IR spectral features are secondary or tertiary manifestations of ice structure or morphology. These observations are useful in mimicking the bulk physical and chemical phenomena taking place in cometary and other extraterrestrial ices but do not directly reveal the structural changes which are their root cause. The phenomenological interpretation of spectral and gas release data is probably the cause of somewhat contradictory explanations invoked to account for differences in water ice behavior in similar temperature regimes. It is the microstructure, micromorphology and microchemical heterogeneity of astrophysical ices which must be characterized if the mechanisms underlying the observed phenomena are to be understood. We have been using a modified Transmission Electron Microscope to characterize the structure of vapor-deposited astrophysical ice analogs as a function of their deposition, temperature history and composition. For the present experiments, pure water vapor is deposited at high vacuum onto a 15 K amorphous carbon film inside an Hitachi H-500H TEM. The resulting ice film (approx. 0.05 micrometers thick) is warmed at the rate of 1 K per minute and diffraction patterns are collected at 1 K intervals. These patterns are converted into radial intensity distributions which are calibrated using patterns of crystalline gold deposited on a small part of the carbon substrate. The small intensity contributed by the amorphous substrate is removed by background subtraction. The proportions of amorphous and crystalline material

Experimental verification of vapor deposition rate theory in high velocity burner rigs

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.; Santoro, Gilbert J.

1985-01-01

The main objective has been the experimental verification of the corrosive vapor deposition theory in high-temperature, high-velocity environments. Towards this end a Mach 0.3 burner-rig appartus was built to measure deposition rates from salt-seeded (mostly Na salts) combustion gases on the internally cooled cylindrical collector. Deposition experiments are underway.

Influence of Molecular Shape on Molecular Orientation and Stability of Vapor-Deposited Organic Semiconductors

NASA Astrophysics Data System (ADS)

Walters, Diane M.; Johnson, Noah D.; Ediger, M. D.

Physical vapor deposition is commonly used to prepare active layers in organic electronics. Recently, it has been shown that molecular orientation and packing can be tuned by changing the substrate temperature during deposition, while still producing macroscopically homogeneous films. These amorphous materials can be highly anisotropic when prepared with low substrate temperatures, and they can exhibit exceptional kinetic stability; films retain their favorable packing when heated to high temperatures. Here, we study the influence of molecular shape on molecular orientation and stability. We investigate disc-shaped molecules, such as TCTA and m-MTDATA, nearly spherical molecules, such as Alq3, and linear molecules covering a broad range of aspect ratios, such as p-TTP and BSB-Cz. Disc-shaped molecules have preferential horizontal orientation when deposited at low substrate temperatures, and their orientation can be tuned by changing the substrate temperature. Alq3 forms stable, amorphous films that are optically isotropic when vapor deposited over a broad range of substrate temperatures. This work may guide the choice of material and deposition conditions for vapor-deposited films used in organic electronics and allow for more efficient devices to be fabricated.

Effect of deposition pressure on the morphology and structural properties of carbon nanotubes synthesized by hot-filament chemical vapor deposition.

PubMed

Arendse, C J; Malgas, G F; Scriba, M R; Cummings, F R; Knoesen, D

2007-10-01

Hot-filament chemical vapor deposition has developed into an attractive method for the synthesis of various carbon nanostructures, including carbon nanotubes. This is primarily due to its versatility, low cost, repeatability, up-scalability, and ease of production. The resulting nano-material synthesized by this technique is dependent on the deposition conditions which can be easily controlled. In this paper we report on the effect of the deposition pressure on the structural properties and morphology of carbon nanotubes synthesized by hot-filament chemical vapor deposition, using Raman spectroscopy and high-resolution scanning electron microscopy, respectively. A 10 nm-thick Ni layer, deposited on a SiO2/Si substrate, was used as catalyst for carbon nanotube growth. Multi-walled carbon nanotubes with diameters ranging from 20-100 nm were synthesized at 500 degrees C with high structural perfection at deposition pressures between 150 and 200 Torr. Raman spectroscopy measurements confirm that the carbon nanotube deposit is homogeneous across the entire substrate area.

Suspended tungsten-based nanowires with enhanced mechanical properties grown by focused ion beam induced deposition

NASA Astrophysics Data System (ADS)

Córdoba, Rosa; Lorenzoni, Matteo; Pablo-Navarro, Javier; Magén, César; Pérez-Murano, Francesc; María De Teresa, José

2017-11-01

The implementation of three-dimensional (3D) nano-objects as building blocks for the next generation of electro-mechanical, memory and sensing nano-devices is at the forefront of technology. The direct writing of functional 3D nanostructures is made feasible by using a method based on focused ion beam induced deposition (FIBID). We use this technique to grow horizontally suspended tungsten nanowires and then study their nano-mechanical properties by three-point bending method with atomic force microscopy. These measurements reveal that these nanowires exhibit a yield strength up to 12 times higher than that of the bulk tungsten, and near the theoretical value of 0.1 times the Young’s modulus (E). We find a size dependence of E that is adequately described by a core-shell model, which has been confirmed by transmission electron microscopy and compositional analysis at the nanoscale. Additionally, we show that experimental resonance frequencies of suspended nanowires (in the MHz range) are in good agreement with theoretical values. These extraordinary mechanical properties are key to designing electro-mechanically robust nanodevices based on FIBID tungsten nanowires.

Influence of vapor deposition on structural and charge transport properties of ethylbenzene films

DOE PAGES

Antony, Lucas W.; Jackson, Nicholas E.; Lyubimov, Ivan; ...

2017-04-14

Organic glass films formed by physical vapor deposition exhibit enhanced stability relative to those formed by conventional liquid cooling and aging techniques. Recently, experimental and computational evidence has emerged indicating that the average molecular orientation can be tuned by controlling the substrate temperature at which these “stable glasses” are grown. In this work, we present a comprehensive all-atom simulation study of ethylbenzene, a canonical stable-glass former, using a computational film formation procedure that closely mimics the vapor deposition process. Atomistic studies of experimentally formed vapor-deposited glasses have not been performed before, and this study therefore begins by verifying that themore » model and method utilized here reproduces key structural features observed experimentally. Having established agreement between several simulated and experimental macroscopic observables, simulations are used to examine the substrate temperature dependence of molecular orientation. The results indicate that ethylbenzene glasses are anisotropic, depending upon substrate temperature, and that this dependence can be understood from the orientation present at the surface of the equilibrium liquid. By treating ethylbenzene as a simple model for molecular semiconducting materials, a quantum-chemical analysis is then used to show that the vapor-deposited glasses exhibit decreased energetic disorder and increased magnitude of the mean-squared transfer integral relative to isotropic, liquid-cooled films, an effect that is attributed to the anisotropic ordering of the molecular film. Finally, these results suggest a novel structure–function simulation strategy capable of tuning the electronic properties of organic semiconducting glasses prior to experimental deposition, which could have considerable potential for organic electronic materials design.« less

Influence of vapor deposition on structural and charge transport properties of ethylbenzene films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Antony, Lucas W.; Jackson, Nicholas E.; Lyubimov, Ivan

Organic glass films formed by physical vapor deposition exhibit enhanced stability relative to those formed by conventional liquid cooling and aging techniques. Recently, experimental and computational evidence has emerged indicating that the average molecular orientation can be tuned by controlling the substrate temperature at which these “stable glasses” are grown. In this work, we present a comprehensive all-atom simulation study of ethylbenzene, a canonical stable-glass former, using a computational film formation procedure that closely mimics the vapor deposition process. Atomistic studies of experimentally formed vapor-deposited glasses have not been performed before, and this study therefore begins by verifying that themore » model and method utilized here reproduces key structural features observed experimentally. Having established agreement between several simulated and experimental macroscopic observables, simulations are used to examine the substrate temperature dependence of molecular orientation. The results indicate that ethylbenzene glasses are anisotropic, depending upon substrate temperature, and that this dependence can be understood from the orientation present at the surface of the equilibrium liquid. By treating ethylbenzene as a simple model for molecular semiconducting materials, a quantum-chemical analysis is then used to show that the vapor-deposited glasses exhibit decreased energetic disorder and increased magnitude of the mean-squared transfer integral relative to isotropic, liquid-cooled films, an effect that is attributed to the anisotropic ordering of the molecular film. Finally, these results suggest a novel structure–function simulation strategy capable of tuning the electronic properties of organic semiconducting glasses prior to experimental deposition, which could have considerable potential for organic electronic materials design.« less

Influence of Vapor Deposition on Structural and Charge Transport Properties of Ethylbenzene Films

PubMed Central

2017-01-01

Organic glass films formed by physical vapor deposition exhibit enhanced stability relative to those formed by conventional liquid cooling and aging techniques. Recently, experimental and computational evidence has emerged indicating that the average molecular orientation can be tuned by controlling the substrate temperature at which these “stable glasses” are grown. In this work, we present a comprehensive all-atom simulation study of ethylbenzene, a canonical stable-glass former, using a computational film formation procedure that closely mimics the vapor deposition process. Atomistic studies of experimentally formed vapor-deposited glasses have not been performed before, and this study therefore begins by verifying that the model and method utilized here reproduces key structural features observed experimentally. Having established agreement between several simulated and experimental macroscopic observables, simulations are used to examine the substrate temperature dependence of molecular orientation. The results indicate that ethylbenzene glasses are anisotropic, depending upon substrate temperature, and that this dependence can be understood from the orientation present at the surface of the equilibrium liquid. By treating ethylbenzene as a simple model for molecular semiconducting materials, a quantum-chemical analysis is then used to show that the vapor-deposited glasses exhibit decreased energetic disorder and increased magnitude of the mean-squared transfer integral relative to isotropic, liquid-cooled films, an effect that is attributed to the anisotropic ordering of the molecular film. These results suggest a novel structure–function simulation strategy capable of tuning the electronic properties of organic semiconducting glasses prior to experimental deposition, which could have considerable potential for organic electronic materials design. PMID:28573203

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

1976-01-01

The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

Room temperature chemical vapor deposition of c-axis ZnO

NASA Astrophysics Data System (ADS)

Barnes, Teresa M.; Leaf, Jacquelyn; Fry, Cassandra; Wolden, Colin A.

2005-02-01

Highly (0 0 2) oriented ZnO films have been deposited at temperatures between 25 and 230 °C by high-vacuum plasma-assisted chemical vapor deposition (HVP-CVD) on glass and silicon substrates. The HVP-CVD process was found to be weakly activated with an apparent activation energy of ∼0.1 eV, allowing room temperature synthesis. Films deposited on both substrates displayed a preferential c-axis texture over the entire temperature range. Films grown on glass demonstrated high optical transparency throughout the visible and near infrared.

Deuterium retention and release behaviours of tungsten and deuterium co-deposited layers

NASA Astrophysics Data System (ADS)

Qiao, L.; Zhang, H. W.; Xu, J.; Chai, L. Q.; Hu, M.; Wang, P.

2018-04-01

Tungsten (W) layer deposited in argon and deuterium atmosphere by magnetron sputtering was used as a model system to study the deuterium (D) retention and release behavior in co-deposited W layer. After deposition several selected samples were exposed in deuterium plasma at 370 K with a flux of 4.0 × 1021 D/(m2 s) up to a fluence of 1.1 × 1025 D/m2. Structures of co-deposited W layers are investigated by field-emission scanning electron microscopy (FESEM) and X-ray diffraction (XRD), and the corresponding D retention and release behaviors are studied as functions of deposition and exposure parameters using thermal desorption spectroscopy (TDS). Two main D release peaks were detected from TDS spectra located near 600 and 800 K in these W and D co-deposited layers, and total deuterium retention increased linearly as a function of W layer's thickness. After deuterium plasma exposure, the total D retention amount in W layer increases significantly and D release peak shifts to lower temperature. Clearly, despite the high density of defects expected in co-deposited W layers, the initial deuterium retention before exposure to the deuterium plasma is low even for the samples with a W&D layer. But due to the high densities of defects, during the deuterium plasma exposure the deuterium retention increases faster for co-deposited layer than for the bulk W sample.

Oxidation/vaporization of silicide coated columbium base alloys

NASA Technical Reports Server (NTRS)

Kohl, F. J.; Stearns, C. A.

1971-01-01

Mass spectrometric and target collection experiments were made at 1600 K to elucidate the mode of oxidative vaporization of two columbium alloys, fused-slurry-coated with a complex silicide former (Si-20Cr-Fe). At oxygen pressures up to 0.0005 torr the major vapor component detected by mass spectrometry for oxidized samples was gaseous silicon monoxide. Analysis of condensates collected at oxygen pressures of 0.1, 1.0 and 10 torr revealed that chromium-, silicon-, iron- and tungsten- containing species were the major products of vaporization. Equilibrium thermochemical diagrams were constructed for the metal-oxygen system corresponding to each constituent metal in both the coating and base alloy. The major vaporizing species are expected to be the gaseous oxides of chromium, silicon, iron and tungsten. Plots of vapor phase composition and maximum vaporization rate versus oxygen pressure were calculated for each coating constituent. The major contribution to weight loss by vaporization at oxygen pressures above 1 torr was shown to be the chromium-containing species.

High growth rate homoepitaxial diamond film deposition at high temperatures by microwave plasma-assisted chemical vapor deposition

NASA Technical Reports Server (NTRS)

Vohra, Yogesh K. (Inventor); McCauley, Thomas S. (Inventor)

1997-01-01

The deposition of high quality diamond films at high linear growth rates and substrate temperatures for microwave-plasma chemical vapor deposition is disclosed. The linear growth rate achieved for this process is generally greater than 50 .mu.m/hr for high quality films, as compared to rates of less than 5 .mu.m/hr generally reported for MPCVD processes.

The Vapor Deposition Model of Space Weathering: A Strawman Paradigm for the Moon

NASA Astrophysics Data System (ADS)

Hapke, Bruce W.

1998-01-01

Understanding space weathering on the lunar surface is essential to solving a number of major problems, including correctly interpreting lunar remote-sensing observations, understanding physical and chemical processes in the lunar regolith, and extrapolating to other bodies, especially Mercury, the asteroids, and the parent bodies of the ordinary chondrites. Hence, it is of great importance to correctly identify the process or processes that dominate lunar space weathering. The vapor deposition model postulates that lunar space weathering occurs as a result of the production of submicrscopic metallic iron (SMFe, also called superparamagnetic iron and nanophase iron) particles in the regolith by the intrinsic differentiation that accompanies the deposition of silicate vapor produced by both solar wind sputtering and micrometeorite impacts. This is the only process that has been demonstrated repeatedly by laboratory experiments to be capable of selectively producing SMFe. Hence, at present, it must be regarded as the leading contender for the correct model of lunar space weathering. This paper reviews the features of the vapor deposition model. The basic mechanism of the model relies on the fact that the porous microrelief of the lunar regolith allows most of the vapor produced by sputtering and impacts to be retained in the soil, rather than escaping from the Moon. As the individual vapor atoms impact the soil grain surfaces, they are first weakly bound by physical adsorption processes, and so have a finite probability of desorbing and escaping. Since the O is the most volatile, it escapes preferentially. The remaining atoms become chemically bound and form amorphous coatings on lunar soil grains. Because Fe is the most easily reduced of the major cations in the soil, the O deficiency manifests itself in the form of interstitial Fe0 in the glass deposits. Subsequent heating by impacts allows the Feo atoms to congregate together by solid-state diffusion to form SMFe

Textural and structural evidence for a predeformation hydrothermal origin of the Tungsten Queen Deposit, Hamme District, North Carolina

USGS Publications Warehouse

Foose, M.P.; Slack, J.F.; Casadevall, T.

1980-01-01

The Hamme tungsten district is composed of a series of steeply dipping quartz-wolframite veins in the Piedmont of North Carolina. Veins are concentrated near the border of the lower Paleozoic Vance County pluton, along its western contact with green-schist-facies metapelites and metavolcanic rocks of the Carolina slate belt. One of these quartz veins, the Snead-Walker, hosts the Tungsten Queen deposit. The vein is 0 to 10 m thick and trends N 35 degrees E for approximately 3,500 m through slate belt rocks and the granitic pluton. The deposit has been worked to a depth of nearly 520 m and contains eight en echelon ore lodes that plunge 42 degrees to 65 degrees between S 10 degrees E and S 10 degrees W. Ore lodes commonly are encased in thin lenses of quartz-sericite greisen. The principal ore mineral is huebnerite and is accompanied by scattered occurrences of pyrite, sphalerite, galena, chalcopyrite, and tetrahedrite. The gangue is predominantly quartz with minor amounts of fluorite, sericite, and carbonate.Studies of minor structures and mineral textures indicate that both the wall rock and the ore and gangue minerals within the vein have been deformed by at least two events. The first event produced relatively gentle, open, and shallow-plunging folds; later, an intense episode of right-lateral shearing developed steeply plunging, tight folds and numerous northeast-trending shears. This latter deformation also developed a prominent alignment of ore and gangue minerals oblique to the vein walls and may have formed the en echelon distribution of ore lodes.In relatively undeformed parts of the vein, clusters of euhedral huebnerite crystals are oriented perpendicular to vein layering. Some prismatic crystals have terminations with cappings of sulfides and in polished thin section show concentric growth zones. These features are similar to textures found in unmetamorphosed tungsten-bearing hydrothermal vein deposits such as those at Pasto Bueno, Peru; Carrock Fell

Mechanistic, kinetic, and processing aspects of tungsten chemical mechanical polishing

NASA Astrophysics Data System (ADS)

Stein, David

This dissertation presents an investigation into tungsten chemical mechanical polishing (CMP). CMP is the industrially predominant unit operation that removes excess tungsten after non-selective chemical vapor deposition (CVD) during sub-micron integrated circuit (IC) manufacture. This work explores the CMP process from process engineering and fundamental mechanistic perspectives. The process engineering study optimized an existing CMP process to address issues of polish pad and wafer carrier life. Polish rates, post-CMP metrology of patterned wafers, electrical test data, and synergy with a thermal endpoint technique were used to determine the optimal process. The oxidation rate of tungsten during CMP is significantly lower than the removal rate under identical conditions. Tungsten polished without inhibition during cathodic potentiostatic control. Hertzian indenter model calculations preclude colloids of the size used in tungsten CMP slurries from indenting the tungsten surface. AFM surface topography maps and TEM images of post-CMP tungsten do not show evidence of plow marks or intergranular fracture. Polish rate is dependent on potassium iodate concentration; process temperature is not. The colloid species significantly affects the polish rate and process temperature. Process temperature is not a predictor of polish rate. A process energy balance indicates that the process temperature is predominantly due to shaft work, and that any heat of reaction evolved during the CMP process is negligible. Friction and adhesion between alumina and tungsten were studied using modified AFM techniques. Friction was constant with potassium iodate concentration, but varied with applied pressure. This corroborates the results from the energy balance. Adhesion between the alumina and the tungsten was proportional to the potassium iodate concentration. A heuristic mechanism, which captures the relationship between polish rate, pressure, velocity, and slurry chemistry, is presented

Optical and infrared properties of glancing angle-deposited nanostructured tungsten films.

PubMed

Ungaro, Craig; Shah, Ankit; Kravchenko, Ivan; Hensley, Dale K; Gray, Stephen K; Gupta, Mool C

2015-02-15

Nanotextured tungsten thin films were obtained on a stainless steel (SS) substrate using the glancing-angle-deposition (GLAD) method. It was found that the optical absorption and thermal emittance of the SS substrate can be controlled by varying the parameters used during deposition. Finite-difference time-domain (FDTD) simulations were used to predict the optical absorption and infrared (IR) reflectance spectra of the fabricated samples, and good agreement was found between simulated and measured data. FDTD simulations were also used to predict the effect of changes in the height and periodicity of the nanotextures. These simulations show that good control over the absorption can be achieved by altering the height and periodicity of the nanostructure. These nanostructures were shown to be temperature stable up to 500°C with the addition of a protective HfO2 layer. Applications for this structure are explored, including a promising application for solar thermal energy systems.

Optical and infrared properties of glancing angle-deposited nanostructured tungsten films

DOE PAGES

Ungaro, Craig; Shah, Ankit; Kravchenko, Ivan; ...

2015-02-06

For this study, nanotextured tungsten thin films were obtained on a stainless steel (SS) substrate using the glancing-angle-deposition (GLAD) method. It was found that the optical absorption and thermal emittance of the SS substrate can be controlled by varying the parameters used during deposition. Finite-difference time-domain (FDTD) simulations were used to predict the optical absorption and infrared (IR) reflectance spectra of the fabricated samples, and good agreement was found between simulated and measured data. FDTD simulations were also used to predict the effect of changes in the height and periodicity of the nanotextures. These simulations show that good control overmore » the absorption can be achieved by altering the height and periodicity of the nanostructure. These nanostructures were shown to be temperature stable up to 500°C with the addition of a protective HfO 2 layer. Finally, applications for this structure are explored, including a promising application for solar thermal energy systems.« less

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

DOEpatents

Grigorian, Leonid [Raymond, OH; Hornyak, Louis [Evergreen, CO; Dillon, Anne C [Boulder, CO; Heben, Michael J [Denver, CO

2008-10-07

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Development of Nb{sub 3}Sn Cavity Vapor Diffusion Deposition System

DOE Office of Scientific and Technical Information (OSTI.GOV)

Eremeev, Grigory V.; Macha, Kurt M.; Clemens, William A.

2014-02-01

Nb{sub 3}Sn is a BCS superconductors with the superconducting critical temperature higher than that of niobium, so theoretically it surpasses the limitations of niobium in RF fields. The feasibility of technology has been demonstrated at 1.5 GHz with Nb{sub 3}Sn vapor deposition technique at Wuppertal University. The benefit at these frequencies is more pronounced at 4.2 K, where Nb{sub 3}Sn coated cavities show RF resistances an order of magnitude lower than that of niobium. At Jefferson Lab we started the development of Nb{sub 3}Sn vapor diffusion deposition system within an R\\&D development program towards compact light sources. Here we presentmore » the current progress of the system development.« less

Continuous growth of single-wall carbon nanotubes using chemical vapor deposition

DOEpatents

Grigorian, Leonid; Hornyak, Louis; Dillon, Anne C; Heben, Michael J

2014-09-23

The invention relates to a chemical vapor deposition process for the continuous growth of a carbon single-wall nanotube where a carbon-containing gas composition is contacted with a porous membrane and decomposed in the presence of a catalyst to grow single-wall carbon nanotube material. A pressure differential exists across the porous membrane such that the pressure on one side of the membrane is less than that on the other side of the membrane. The single-wall carbon nanotube growth may occur predominately on the low-pressure side of the membrane or, in a different embodiment of the invention, may occur predominately in between the catalyst and the membrane. The invention also relates to an apparatus used with the carbon vapor deposition process.

Differential AC chip calorimeter for in situ investigation of vapor deposited thin films

NASA Astrophysics Data System (ADS)

Ahrenberg, Mathias; Schick, Christoph; Huth, Heiko; Schoifet, Evgeni; Ediger, Mark; Whitaker, Katie

2012-02-01

Physical vapor deposition (PVD) can be used to produce thin films with particular material properties like extraordinarily stable glasses of organic molecules. We describe an AC chip calorimeter for in-situ heat capacity measurements of as-deposited nanometer thin films of organic glass formers. The calorimetric system is based on a differential AC chip calorimeter which is placed in the vacuum chamber for physical vapor deposition. The sample is directly deposited onto one calorimetric chip sensor while the other sensor is protected against deposition. The device and the temperature calibration procedure are described. The latter makes use of the phase transitions of cyclopentane and the frequency dependence of the dynamic glass transition of toluene and ethylbenzene. Sample thickness determination is based on a finite element modeling (FEM) of the sensor sample arrangement. A layer of toluene was added to the sample sensor and its thickness was varied in an iterative way until the model fits the experimental data.

Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications

DTIC Science & Technology

2000-06-01

coatings , photovoltaics, touch sensitive controls, electromagnetic shielding (as found on microwave ovens and stealth fighters), static dissipaters, and so...depositing high quality films. The methods are physical vapor deposition ( PVD ), spin/mist deposition, (CVD), and alternating layer (AL) CVD. PVD ...PZT & SBT, YBa2Cu3O, CeO, InO, TCOs, Varistors Ta2O5 , ZrO, MnO, HfO, CeO, MnO, MgO SAW/microwave Silicon/: Si, SiGe, SiGeC, �. Opto-electronics

Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Nguyen, QuynhGiao N.

1998-01-01

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

High rate chemical vapor deposition of carbon films using fluorinated gases

DOEpatents

Stafford, Byron L.; Tracy, C. Edwin; Benson, David K.; Nelson, Arthur J.

1993-01-01

A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

Growth of diamond by RF plasma-assisted chemical vapor deposition

NASA Technical Reports Server (NTRS)

Meyer, Duane E.; Ianno, Natale J.; Woollam, John A.; Swartzlander, A. B.; Nelson, A. J.

1988-01-01

A system has been designed and constructed to produce diamond particles by inductively coupled radio-frequency, plasma-assisted chemical vapor deposition. This is a low-pressure, low-temperature process used in an attempt to deposit diamond on substrates of glass, quartz, silicon, nickel, and boron nitride. Several deposition parameters have been varied including substrate temperature, gas concentration, gas pressure, total gas flow rate, RF input power, and deposition time. Analytical methods employed to determine composition and structure of the deposits include scanning electron microscopy, absorption spectroscopy, scanning Auger microprobe spectroscopy, and Raman spectroscopy. Analysis indicates that particles having a thin graphite surface, as well as diamond particles with no surface coatings, have been deposited. Deposits on quartz have exhibited optical bandgaps as high as 4.5 eV. Scanning electron microscopy analysis shows that particles are deposited on a pedestal which Auger spectroscopy indicates to be graphite. This is a phenomenon that has not been previously reported in the literature.

Development of tungsten armor and bonding to copper for plasma-interactive components

NASA Astrophysics Data System (ADS)

Smid, I.; Akiba, M.; Vieider, G.; Plöchl, L.

1998-10-01

For the highest sputtering threshold of all possible candidates, tungsten will be the most likely armor material in highly loaded plasma-interactive components of commercially relevant fusion reactors. The development of new materials, as well as joining and coating techniques are needed to find the best balance in plasma compatibility, lifetime, reliability, neutron irradiation resistance, and safety. Further important issues for selection are availability, costs of machining and production, etc. Tungsten doped with lanthanum oxide is a commercially available W grade for electrodes, designed for low electron work function, higher recrystallization temperature, reduced secondary grain growth, and machinability at relatively low costs. W-Re and related tungsten base alloys are preferred for application at high temperatures, when high strength, high thermal shock and recrystallization resistance are required. Due to the high costs and limited global availability of Re, however, the amount of such alloys in a commercial reactor should be kept low. Newly measured material properties up to high temperatures are presented for lanthanated and W-Re alloys, and the impact on fusion application is discussed. Recently developed coatings of chemical vapor deposited tungsten (CVD-W) on copper substrates have proven to be resistant to repeated thermal and shock loading. Layers of more than 5 mm, as required for the International Thermonuclear Experimental Reactor (ITER), became available. Vacuum plasma sprayed tungsten (VPS-W) in particular is attractive for its lower costs, and the potential of in situ repair. However, the advantage of sacrificial plasma-interactive tungsten coatings in long-term fusion devices has yet to be demonstrated. A durable and reliable joining of bulk tungsten to copper is needed to achieve an acceptable component lifetime in a fusion environment. The material properties of the copper alloys proposed for ITER, and their impact on the quality of bonding

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

1978-01-01

The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

Texture related unusual phenomena in electrodeposition and vapor deposition

NASA Astrophysics Data System (ADS)

Lee, D. N.; Han, H. N.

2015-04-01

The tensile strength of electrodeposits generally decreases with increasing bath temperature because the grain size increases and the dislocation density decreases with increasing bath temperature. Therefore, discontinuities observed in the tensile strength vs. bath temperature curves in electrodeposition of copper are unusual. The tensile strength of electrodeposits generally increases with increasing cathode current density because the rate of nucleation in electrodeposits increases with increasing current density, which in turn gives rise to a decrease in the grain size and in turn an increase in the strength. Therefore, a decrease in the tensile strength of copper electrodeposits at a high current density is unusual. The grain size of vapor deposits is expected to decrease with decreasing substrate temperature. However, rf sputtered Co-Cr deposits showed that deposits formed on water-cooled polyimide substrates had a larger grain size than deposits formed on polyimide substrates at 200 °C. These unusual phenomena can be explained by the preferred growth model for deposition texture evolution.

CMAS Interactions with Advanced Environmental Barrier Coatings Deposited via Plasma Spray- Physical Vapor Deposition

NASA Technical Reports Server (NTRS)

Harder, B. J.; Wiesner, V. L.; Zhu, D.; Johnson, N. S.

2017-01-01

Materials for advanced turbine engines are expected to have temperature capabilities in the range of 1370-1500C. At these temperatures the ingestion of sand and dust particulate can result in the formation of corrosive glass deposits referred to as CMAS. The presence of this glass can both thermomechanically and thermochemically significantly degrade protective coatings on metallic and ceramic components. Plasma Spray- Physical Vapor Deposition (PS-PVD) was used to deposit advanced environmental barrier coating (EBC) systems for investigation on their interaction with CMAS compositions. Coatings were exposed to CMAS and furnace tested in air from 1 to 50 hours at temperatures ranging from 1200-1500C. Coating composition and crystal structure were tracked with X-ray diffraction and microstructure with electron microscopy.

Chemical vapor deposition modeling: An assessment of current status

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.

1991-01-01

The shortcomings of earlier approaches that assumed thermochemical equilibrium and used chemical vapor deposition (CVD) phase diagrams are pointed out. Significant advancements in predictive capabilities due to recent computational developments, especially those for deposition rates controlled by gas phase mass transport, are demonstrated. The importance of using the proper boundary conditions is stressed, and the availability and reliability of gas phase and surface chemical kinetic information are emphasized as the most limiting factors. Future directions for CVD are proposed on the basis of current needs for efficient and effective progress in CVD process design and optimization.

Raman scattering from rapid thermally annealed tungsten silicide

NASA Technical Reports Server (NTRS)

Kumar, Sandeep; Dasgupta, Samhita; Jackson, Howard E.; Boyd, Joseph T.

1987-01-01

Raman scattering as a technique for studying the formation of tungsten silicide is presented. The tungsten silicide films have been formed by rapid thermal annealing of thin tungsten films sputter deposited on silicon substrates. The Raman data are interpreted by using data from resistivity measurements, Auger and Rutherford backscattering measurements, and scanning electron microscopy.

Variscan ore formation and metamorphism at the Felbertal scheelite deposit (Austria): constraining tungsten mineralisation from Re-Os dating of molybdenite

NASA Astrophysics Data System (ADS)

Raith, Johann G.; Stein, Holly J.

2006-10-01

The Felbertal scheelite deposit in the Eastern Alps has been regarded as the type locality for stratabound scheelite deposits. It is hosted by a Cambro-Ordovician metavolcanic arc sequence with minor Variscan granitoids (˜ 340 Ma) in the central Tauern Window. Re-Os model ages for molybdenite from the Felbertal tungsten deposit range between ˜ 358 and ˜ 336 Ma and record several pulses of magmatic-hydrothermal-metamorphic molybdenite formation. Molybdenite ages from the K2 orebody, a scheelite-rich quartz mylonite in the Western ore field, indicate that both mineralisation and mylonite are Variscan in age and suggest that the shear zone was active for ˜ 20 million years. Early stage tungsten mineralisation ( Scheelite 1) in quartzitic ores in the Eastern ore field, which is free of molybdenite, yielded very low to near blank levels of Re and Os and thus could not be dated. However, molybdenite from scheelite-quartz stringers, previously interpreted as a feeder stockwork to quartzitic scheelite ore of presumed Cambrian age, yielded Variscan Re-Os ages of ˜ 342 and ˜ 337 Ma. Dating of molybdenite contained in scheelite ores thus far provides no indication of a Cambrian component to the tungsten mineralisation. Our data are consistent with a model of either granite intrusion-related ore formation and coeval metamorphic overprint during the Early Carboniferous or, alternatively, molybdenite formation may be exclusively attributed to Variscan metamorphism (see Stein 2006).

Differential alternating current chip calorimeter for in situ investigation of vapor-deposited thin films

NASA Astrophysics Data System (ADS)

Ahrenberg, M.; Shoifet, E.; Whitaker, K. R.; Huth, H.; Ediger, M. D.; Schick, C.

2012-03-01

Physical vapor deposition can be used to produce thin films with interesting material properties including extraordinarily stable organic glasses. We describe an ac chip calorimeter for in situ heat capacity measurements of as-deposited nanometer thin films of organic glass formers. The calorimetric system is based on a differential ac chip calorimeter which is placed in the vacuum chamber for physical vapor deposition. The sample is directly deposited onto one calorimetric chip sensor while the other sensor is protected against deposition. The device and the temperature calibration procedure are described. The latter makes use of the phase transitions of cyclopentane and the frequency dependence of the dynamic glass transition of toluene and ethylbenzene. Sample thickness determination is based on a finite element modeling of the sensor sample arrangement. In the modeling, a layer of toluene was added to the sample sensor and its thickness was varied in an iterative way until the model fit the experimental data.

Vapor-Phase Deposition and Modification of Metal-Organic Frameworks: State-of-the-Art and Future Directions.

PubMed

Stassen, Ivo; De Vos, Dirk; Ameloot, Rob

2016-10-04

Materials processing, and thin-film deposition in particular, is decisive in the implementation of functional materials in industry and real-world applications. Vapor processing of materials plays a central role in manufacturing, especially in electronics. Metal-organic frameworks (MOFs) are a class of nanoporous crystalline materials on the brink of breakthrough in many application areas. Vapor deposition of MOF thin films will facilitate their implementation in micro- and nanofabrication research and industries. In addition, vapor-solid modification can be used for postsynthetic tailoring of MOF properties. In this context, we review the recent progress in vapor processing of MOFs, summarize the underpinning chemistry and principles, and highlight promising directions for future research. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Some observations on uranium carbide alloy/tungsten compatibility.

NASA Technical Reports Server (NTRS)

Phillips, W. M.

1972-01-01

Results of chemical compatibility tests between both pure tungsten and thoriated tungsten run at 1800 C for up to 3300 hours with uranium carbide alloys. Alloying with zirconium carbide appeared to widen the homogeneity range of uranium carbide, making additional carbon available for reaction with the tungsten. Reaction layers were formed both by vapor phase reaction and by physical contact, producing either or both UWC2 and W2C, depending upon the phases present in the starting fuel alloy. Formation of UWC2 results in slow growth of the reaction layer with time, while W2C reaction layers grow rapidly, allowing equilibrium to be reached in less than 2500 hours at 1800 C. Neither the presence of a thermal gradient nor the presence of thoria in the tungsten clad affect the reactions observed.

A Self Consistent RF Discharge, Plasma Chemistry and Surface Model for Plasma Enhanced Chemical Vapor Deposition

DTIC Science & Technology

1988-06-30

consists of three submodels for the electron kinetics, plasma chemistry , and surface deposition kinetics for a-Si:H deposited from radio frequency...properties. Plasma enhanced, Chemical vapor deposition, amorphous silicon, Modeling, Electron kinetics, Plasma chemistry , Deposition kinetics, Rf discharge, Silane, Film properties, Silicon.

Expanding the molecular-ruler process through vapor deposition of hexadecanethiol

PubMed Central

Patron, Alexandra M; Hooker, Timothy S; Santavicca, Daniel F

2017-01-01

The development of methods to produce nanoscale features with tailored chemical functionalities is fundamental for applications such as nanoelectronics and sensor fabrication. The molecular-ruler process shows great utility for this purpose as it combines top-down lithography for the creation of complex architectures over large areas in conjunction with molecular self-assembly, which enables precise control over the physical and chemical properties of small local features. The molecular-ruler process, which most commonly uses mercaptoalkanoic acids and metal ions to generate metal-ligated multilayers, can be employed to produce registered nanogaps between metal features. Expansion of this methodology to include molecules with other chemical functionalities could greatly expand the overall versatility, and thus the utility, of this process. Herein, we explore the use of alkanethiol molecules as the terminating layer of metal-ligated multilayers. During this study, it was discovered that the solution deposition of alkanethiol molecules resulted in low overall surface coverage with features that varied in height. Because features with varied heights are not conducive to the production of uniform nanogaps via the molecular-ruler process, the vapor-phase deposition of alkanethiol molecules was explored. Unlike the solution-phase deposition, alkanethiol islands produced by vapor-phase deposition exhibited markedly higher surface coverages of uniform heights. To illustrate the applicability of this method, metal-ligated multilayers, both with and without an alkanethiol capping layer, were utilized to create nanogaps between Au features using the molecular-ruler process. PMID:29181290

Advances in the Development of a WCl6 CVD System for Coating UO2 Powders with Tungsten

NASA Technical Reports Server (NTRS)

Mireles, Omar R.; Tieman, Alyssa; Broadway, Jeramie; Hickman, Robert

2013-01-01

W-UO2 CERMET fuels are under development to enable Nuclear Thermal Propulsion (NTP) for deep space exploration. Research efforts with an emphasis on fuel fabrication, testing, and identification of potential risks is underway. One primary risk is fuel loss due to CTE mismatch between W and UO2 and the grain boundary structure of W particles resulting in higher thermal stresses. Mechanical failure can result in significant reduction of the UO2 by hot hydrogen. Fuel loss can be mitigated if the UO2 particles are coated with a layer of high density tungsten before the consolidation process. This paper discusses the work to date, results, and advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process. Keywords: Space, Nuclear, Thermal, Propulsion, Fuel, CERMET, CVD, Tungsten, Uranium

Heteroepitaxial growth of 3-5 semiconductor compounds by metal-organic chemical vapor deposition for device applications

NASA Technical Reports Server (NTRS)

Collis, Ward J.; Abul-Fadl, Ali

1988-01-01

The purpose of this research is to design, install and operate a metal-organic chemical vapor deposition system which is to be used for the epitaxial growth of 3-5 semiconductor binary compounds, and ternary and quaternary alloys. The long-term goal is to utilize this vapor phase deposition in conjunction with existing current controlled liquid phase epitaxy facilities to perform hybrid growth sequences for fabricating integrated optoelectronic devices.

Spontaneous Oscillations and Waves during Chemical Vapor Deposition of InN

NASA Astrophysics Data System (ADS)

Jiang, F.; Munkholm, A.; Wang, R.-V.; Streiffer, S. K.; Thompson, Carol; Fuoss, P. H.; Latifi, K.; Elder, K. R.; Stephenson, G. B.

2008-08-01

We report observations of self-sustaining spatiotemporal chemical oscillations during metal-organic chemical vapor deposition of InN onto GaN. Under constant supply of vapor precursors trimethylindium and NH3, the condensed-phase cycles between crystalline islands of InN and elemental In droplets. Propagating fronts between regions of InN and In occur with linear, circular, and spiral geometries. The results are described by a model in which the nitrogen activity produced by surface-catalyzed NH3 decomposition varies with the exposed surface areas of GaN, InN, and In.

Spontaneous oscillations and waves during chemical vapor deposition of InN.

PubMed

Jiang, F; Munkholm, A; Wang, R-V; Streiffer, S K; Thompson, Carol; Fuoss, P H; Latifi, K; Elder, K R; Stephenson, G B

2008-08-22

We report observations of self-sustaining spatiotemporal chemical oscillations during metal-organic chemical vapor deposition of InN onto GaN. Under constant supply of vapor precursors trimethylindium and NH3, the condensed-phase cycles between crystalline islands of InN and elemental In droplets. Propagating fronts between regions of InN and In occur with linear, circular, and spiral geometries. The results are described by a model in which the nitrogen activity produced by surface-catalyzed NH3 decomposition varies with the exposed surface areas of GaN, InN, and In.

Production and reactions of silicon atoms in hot wire deposition of amorphous silicon

NASA Astrophysics Data System (ADS)

Zheng, Wengang; Gallagher, Alan

2003-10-01

Decomposing silane and hydrogen molecules on a hot tungsten filament is an alternative method of depositing hydrogenated microcrystal and amorphous Si for thin-film semmiconductor devices. This "hot-wire" method can have significant advantages, such as high film deposition rates. The deposition chemistry involves Si and H atoms released from the filament, followed by their reactions with the vapor and surfaces. To establish these deposition pathways, we measure radicals at the substrate with a home built, threshold ionization mass spectrometer. The design and operation of this mass spectrometer for radical detection, and the behavior of Si atom production and reactions, will be presented. This work is supported by the National Renewable Energy Laboratory, Golden, CO 80401

Measuring the dynamic polarizability of tungsten atom via electrical wire explosion in vacuum

NASA Astrophysics Data System (ADS)

Shi, Huantong; Zou, Xiaobing; Wang, Xinxin

2018-02-01

Electrical explosion of wire provides a practical approach to the experimental measurement of dynamic polarizability of metal atoms with high melting and boiling temperatures. With the help of insulation coating, a section of tungsten wire was transformed to the plasma state while the near electrode region was partially vaporized, which enabled us to locate the "neutral-region" (consisting of gaseous atoms) in the Mach-Zehnder interferogram. In this paper, the polarizability of the tungsten atom at 532 nm was reconstructed based on a technique previously used for the same purpose, and the basic preconditions of the measurement were verified in detail, including the existence of the neutral region, conservation of linear density of tungsten during wire expansion, and neglect of the vaporized insulation coating. The typical imaging time varied from 80 ns to as late as 200 ns and the reconstructed polarizability of the tungsten atom was 16 ± 1 Å3, which showed good statistical consistency and was also in good agreement with the previous results.

Measurements of tungsten migration in the DIII-D divertor

NASA Astrophysics Data System (ADS)

Wampler, W. R.; Rudakov, D. L.; Watkins, J. G.; McLean, A. G.; Unterberg, E. A.; Stangeby, P. C.

2017-12-01

An experimental study of migration of tungsten in the DIII-D divertor is described, in which the outer strike point of L-mode plasmas was positioned on a toroidal ring of tungsten-coated metal inserts. Net deposition of tungsten on the divertor just outside the strike point was measured on graphite samples exposed to various plasma durations using the divertor materials evaluation system. Tungsten coverage, measured by Rutherford backscattering spectroscopy (RBS), was found to be low and nearly independent of both radius and exposure time closer to the strike point, whereas farther from the strike point the W coverage was much larger and increased with exposure time. Depth profiles from RBS show this was due to accumulation of thicker mixed-material deposits farther from the strike point where the plasma temperature is lower. These results are consistent with a low near-surface steady-state coverage on graphite undergoing net erosion, and continuing accumulation in regions of net deposition. This experiment provides data needed to validate, and further improve computational simulations of erosion and deposition of material on plasma-facing components and transport of impurities in magnetic fusion devices. Such simulations are underway and will be reported later.

Why Chemical Vapor Deposition Grown MoS2 Samples Outperform Physical Vapor Deposition Samples: Time-Domain ab Initio Analysis.

PubMed

Li, Linqiu; Long, Run; Prezhdo, Oleg V

2018-06-13

Two-dimensional transition metal dichalcogenides (TMDs) have drawn strong attention due to their unique properties and diverse applications. However, TMD performance depends strongly on material quality and defect morphology. Experiments show that samples grown by chemical vapor deposition (CVD) outperform those obtained by physical vapor deposition (PVD). Experiments also show that CVD samples exhibit vacancy defects, while antisite defects are frequently observed in PVD samples. Our time-domain ab initio study demonstrates that both antisites and vacancies accelerate trapping and nonradiative recombination of charge carriers, but antisites are much more detrimental than vacancies. Antisites create deep traps for both electrons and holes, reducing energy gaps for recombination, while vacancies trap primarily holes. Antisites also perturb band-edge states, creating significant overlap with the trap states. In comparison, vacancy defects overlap much less with the band-edge states. Finally, antisites can create pairs of electron and hole traps close to the Fermi energy, allowing trapping by thermal activation from the ground state and strongly contributing to charge scattering. As a result, antisites accelerate charge recombination by more than a factor of 8, while vacancies enhance the recombination by less than a factor of 2. Our simulations demonstrate a general principle that missing atoms are significantly more benign than misplaced atoms, such as antisites and adatoms. The study rationalizes the existing experimental data, provides theoretical insights into the diverse behavior of different classes of defects, and generates guidelines for defect engineering to achieve high-performance electronic, optoelectronic, and solar-cell devices.

Exploration of plasma-enhanced chemical vapor deposition as a method for thin-film fabrication with biological applications.

PubMed

Vasudev, Milana C; Anderson, Kyle D; Bunning, Timothy J; Tsukruk, Vladimir V; Naik, Rajesh R

2013-05-22

Chemical vapor deposition (CVD) has been used historically for the fabrication of thin films composed of inorganic materials. But the advent of specialized techniques such as plasma-enhanced chemical vapor deposition (PECVD) has extended this deposition technique to various monomers. More specifically, the deposition of polymers of responsive materials, biocompatible polymers, and biomaterials has made PECVD attractive for the integration of biotic and abiotic systems. This review focuses on the mechanisms of thin-film growth using low-pressure PECVD and current applications of classic PECVD thin films of organic and inorganic materials in biological environments. The last part of the review explores the novel application of low-pressure PECVD in the deposition of biological materials.

Physical vapor deposition as a route to hidden amorphous states

PubMed Central

Dawson, Kevin J.; Kearns, Kenneth L.; Yu, Lian; Steffen, Werner; Ediger, M. D.

2009-01-01

Stable glasses of indomethacin (IMC) were prepared by using physical vapor deposition. Wide-angle X-ray scattering measurements were performed to characterize the average local structure. IMC glasses prepared at a substrate temperature of 0.84 Tg (where Tg is the glass transition temperature) and a deposition rate of 0.2 nm/s show a broad, high-intensity peak at low q values that is not present in the supercooled liquid or melt-quenched glasses. When annealed slightly above Tg, the new WAXS pattern transforms into the melt-quenched glass pattern, but only after very long annealing times. For a series of samples prepared at the lowest deposition rate, the new local packing arrangement is present only for deposition temperatures below Tg −20 K, suggesting an underlying first-order liquid-to-liquid phase transition. PMID:19666494

Tungsten-yttria carbide coating for conveying copper

DOEpatents

Rothman, Albert J.

1993-01-01

A method is provided for providing a carbided-tungsten-yttria coating on the interior surface of a copper vapor laser. The surface serves as a wick for the condensation of liquid copper to return the condensate to the interior of the laser for revolatilization.

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Method of physical vapor deposition of metal oxides on semiconductors

DOEpatents

Norton, David P.

2001-01-01

A process for growing a metal oxide thin film upon a semiconductor surface with a physical vapor deposition technique in a high-vacuum environment and a structure formed with the process involves the steps of heating the semiconductor surface and introducing hydrogen gas into the high-vacuum environment to develop conditions at the semiconductor surface which are favorable for growing the desired metal oxide upon the semiconductor surface yet is unfavorable for the formation of any native oxides upon the semiconductor. More specifically, the temperature of the semiconductor surface and the ratio of hydrogen partial pressure to water pressure within the vacuum environment are high enough to render the formation of native oxides on the semiconductor surface thermodynamically unstable yet are not so high that the formation of the desired metal oxide on the semiconductor surface is thermodynamically unstable. Having established these conditions, constituent atoms of the metal oxide to be deposited upon the semiconductor surface are directed toward the surface of the semiconductor by a physical vapor deposition technique so that the atoms come to rest upon the semiconductor surface as a thin film of metal oxide with no native oxide at the semiconductor surface/thin film interface. An example of a structure formed by this method includes an epitaxial thin film of (001)-oriented CeO.sub.2 overlying a substrate of (001) Ge.

Plasma-Powder Feedstock Interaction During Plasma Spray-Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Anwaar, Aleem; Wei, Lianglinag; Guo, Hongbo; Zhang, Baopeng

2017-02-01

Plasma spray-physical vapor deposition is a new process developed to produce coatings from the vapor phase. To achieve deposition from the vapor phase, the plasma-feedstock interaction inside the plasma torch, i.e., from the powder injection point to the nozzle exit, is critical. In this work, the plasma characteristics and the momentum and heat transfer between the plasma and powder feedstock at different torch input power levels were investigated theoretically to optimize the net plasma torch power, among other important factors such as the plasma gas composition, powder feed rate, and carrier gas. The plasma characteristics were calculated using the CEA2 code, and the plasma-feedstock interaction was studied inside the torch nozzle at low-pressure (20-25 kPa) conditions. A particle dynamics model was introduced to compute the particle velocity, coupled with Xi Chen's drag model for nonevaporating particles. The results show that the energy transferred to the particles and the coating morphology are greatly influenced by the plasma gas characteristics and the particle dynamics inside the nozzle. The heat transfer between the plasma gas and feedstock material increased with the net torch power up to an optimum at 64 kW, at which a maximum of 3.4% of the available plasma energy was absorbed by the feedstock powder. Experimental results using agglomerated 7-8 wt.% yttria-stabilized zirconia (YSZ) powder as feedstock material confirmed the theoretical predictions.

Boron nitride microfibers grown by plasma-assisted laser chemical vapor deposition without a metal catalyst

NASA Astrophysics Data System (ADS)

Komatsu, Shojiro; Kazami, Daisuke; Tanaka, Hironori; Shimizu, Yoshiki; Moriyoshi, Yusuke; Shiratani, Masaharu; Okada, Katsuyuki

2006-04-01

Boron nitride fibers were found to grow on polycrystalline nickel and Si (100) substrates by plasma-assisted laser chemical vapor deposition from B2H6+NH3 using an excimer laser at 193nm. Their diameter was typically a few hundreds of nanometers, while the length was a few tens of micrometers. They were stoichiometric or boron-rich BN in chemical composition. When the substrate was rotated during deposition, spiral fibers were found to grow. We conclude that they grew with the help of laser light by other than the vapor - liquid - solid mechanism.

Advanced Computational Modeling of Vapor Deposition in a High-Pressure Reactor

NASA Technical Reports Server (NTRS)

Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

2004-01-01

In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

Advanced Computational Modeling of Vapor Deposition in a High-pressure Reactor

NASA Technical Reports Server (NTRS)

Cardelino, Beatriz H.; Moore, Craig E.; McCall, Sonya D.; Cardelino, Carlos A.; Dietz, Nikolaus; Bachmann, Klaus

2004-01-01

In search of novel approaches to produce new materials for electro-optic technologies, advances have been achieved in the development of computer models for vapor deposition reactors in space. Numerical simulations are invaluable tools for costly and difficult processes, such as those experiments designed for high pressures and microgravity conditions. Indium nitride is a candidate compound for high-speed laser and photo diodes for optical communication system, as well as for semiconductor lasers operating into the blue and ultraviolet regions. But InN and other nitride compounds exhibit large thermal decomposition at its optimum growth temperature. In addition, epitaxy at lower temperatures and subatmospheric pressures incorporates indium droplets into the InN films. However, surface stabilization data indicate that InN could be grown at 900 K in high nitrogen pressures, and microgravity could provide laminar flow conditions. Numerical models for chemical vapor deposition have been developed, coupling complex chemical kinetics with fluid dynamic properties.

Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCloy, John S.; Tustison, Randal W.

2013-04-22

Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

Glasses of three alkyl phosphates show a range of kinetic stabilities when prepared by physical vapor deposition

NASA Astrophysics Data System (ADS)

Beasley, M. S.; Tylinski, M.; Chua, Y. Z.; Schick, C.; Ediger, M. D.

2018-05-01

In situ AC nanocalorimetry was used to characterize vapor-deposited glasses of three phosphates with increasing lengths of alkyl side chains: trimethyl phosphate, triethyl phosphate, and tributyl phosphate. The as-deposited glasses were assessed in terms of their reversing heat capacity, onset temperature, and isothermal transformation time. Glasses with a range of kinetic stabilities were prepared, including kinetically stable glasses, as indicated by high onset temperatures and long transformation times. Trimethyl phosphate forms kinetically stable glasses, similar to many other organic molecules, while triethyl phosphate and tributyl phosphate do not. Triethyl phosphate and tributyl phosphate present the first examples of non-hydrogen bonding systems that are unable to form stable glasses via vapor deposition at 0.2 nm/s. Based on experiments utilizing different deposition rates, we conclude that triethyl phosphate and tributyl phosphate lack the surface mobility required for stable glass formation. This may be related to their high enthalpies of vaporization and the internal structure of the liquid state.

Scaling behavior of columnar structure during physical vapor deposition

NASA Astrophysics Data System (ADS)

Meese, W. J.; Lu, T.-M.

2018-02-01

The statistical effects of different conditions in physical vapor deposition, such as sputter deposition, have on thin film morphology has long been the subject of interest. One notable effect is that of column development due to differential chamber pressure in the well-known empirical model called the Thornton's Structure Zone Model. The model is qualitative in nature and theoretical understanding with quantitative predictions of the morphology is still lacking due, in part, to the absence of a quantitative description of the incident flux distribution on the growth front. In this work, we propose an incident Gaussian flux model developed from a series of binary hard-sphere collisions and simulate its effects using Monte Carlo methods and a solid-on-solid growth scheme. We also propose an approximate cosine-power distribution for faster Monte Carlo sampling. With this model, it is observed that higher chamber pressures widen the average deposition angle, and similarly increase the growth of column diameters (or lateral correlation length) and the column-to-column separation (film surface wavelength). We treat both the column diameter and the surface wavelength as power laws. It is seen that both the column diameter exponent and the wavelength exponent are very sensitive to changes in pressure for low pressures (0.13 Pa to 0.80 Pa); meanwhile, both exponents saturate for higher pressures (0.80 Pa to 6.7 Pa) around a value of 0.6. These predictions will serve as guides to future experiments for quantitative description of the film morphology under a wide range of vapor pressure.

Microstructural Effects and Properties of Non-line-of-Sight Coating Processing via Plasma Spray-Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Harder, Bryan J.; Zhu, Dongming; Schmitt, Michael P.; Wolfe, Douglas E.

2017-08-01

Plasma spray-physical vapor deposition (PS-PVD) is a unique processing method that bridges the gap between conventional thermal spray and vapor phase methods, and enables highly tailorable coatings composed of a variety of materials in thin, dense layers or columnar microstructures with modification of the processing conditions. The strengths of this processing technique are material and microstructural flexibility, deposition speed, and potential for non-line-of-sight (NLOS) capability by vaporization of the feedstock material. The NLOS capability of PS-PVD is investigated here using yttria-stabilized zirconia and gadolinium zirconate, which are materials of interest for turbine engine applications. PS-PVD coatings were applied to static cylindrical substrates approximately 6-19 mm in diameter to study the coating morphology as a function of angle. In addition, coatings were deposited on flat substrates under various impingement configurations. Impingement angle had significant effects on the deposition mode, and microscopy of coatings indicated that there was a shift in the deposition mode at approximately 90° from incidence on the cylindrical samples, which may indicate the onset of more turbulent flow and PVD-like growth. Coatings deposited at non-perpendicular angles exhibited a higher density and nearly a 2× improvement in erosion performance when compared to coatings deposited with the torch normal to the surface.

Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Raupp, Gregory B.

1993-01-01

The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

Gallium assisted plasma enhanced chemical vapor deposition of silicon nanowires.

PubMed

Zardo, I; Yu, L; Conesa-Boj, S; Estradé, S; Alet, Pierre Jean; Rössler, J; Frimmer, M; Roca I Cabarrocas, P; Peiró, F; Arbiol, J; Morante, J R; Fontcuberta I Morral, A

2009-04-15

Silicon nanowires have been grown with gallium as catalyst by plasma enhanced chemical vapor deposition. The morphology and crystalline structure has been studied by electron microscopy and Raman spectroscopy as a function of growth temperature and catalyst thickness. We observe that the crystalline quality of the wires increases with the temperature at which they have been synthesized. The crystalline growth direction has been found to vary between <111> and <112>, depending on both the growth temperature and catalyst thickness. Gallium has been found at the end of the nanowires, as expected from the vapor-liquid-solid growth mechanism. These results represent good progress towards finding alternative catalysts to gold for the synthesis of nanowires.

Fabrication of lightweight ceramic mirrors by means of a chemical vapor deposition process

NASA Technical Reports Server (NTRS)

Goela, Jitendra S. (Inventor); Taylor, Raymond L. (Inventor)

1991-01-01

A process to fabricate lightweigth ceramic mirrors, and in particular, silicon/silicon carbide mirrors, involves three chemical vapor deposition steps: one to produce the mirror faceplate, the second to form the lightweight backstructure which is deposited integral to the faceplate, and the third and final step which results in the deposition of a layer of optical grade material, for example, silicon, onto the front surface of the faceplate. The mirror figure and finish are fabricated into this latter material.

Ultrahigh Responsivity and Detectivity Graphene-Perovskite Hybrid Phototransistors by Sequential Vapor Deposition

NASA Astrophysics Data System (ADS)

Chang, Po-Han; Liu, Shang-Yi; Lan, Yu-Bing; Tsai, Yi-Chen; You, Xue-Qian; Li, Chia-Shuo; Huang, Kuo-You; Chou, Ang-Sheng; Cheng, Tsung-Chin; Wang, Juen-Kai; Wu, Chih-I.

2017-04-01

In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W-1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450-700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices.

Evidence of thermal transport anisotropy in stable glasses of vapor deposited organic molecules

NASA Astrophysics Data System (ADS)

Ràfols-Ribé, Joan; Dettori, Riccardo; Ferrando-Villalba, Pablo; Gonzalez-Silveira, Marta; Abad, Llibertat; Lopeandía, Aitor F.; Colombo, Luciano; Rodríguez-Viejo, Javier

2018-03-01

Vapor deposited organic glasses are currently in use in many optoelectronic devices. Their operation temperature is limited by the glass transition temperature of the organic layers and thermal management strategies become increasingly important to improve the lifetime of the device. Here we report the unusual finding that molecular orientation heavily influences heat flow propagation in glassy films of small molecule organic semiconductors. The thermal conductivity of vapor deposited thin-film semiconductor glasses is anisotropic and controlled by the deposition temperature. We compare our data with extensive molecular dynamics simulations to disentangle the role of density and molecular orientation on heat propagation. Simulations do support the view that thermal transport along the backbone of the organic molecule is strongly preferred with respect to the perpendicular direction. This is due to the anisotropy of the molecular interaction strength that limits the transport of atomic vibrations. This approach could be used in future developments to implement small molecule glassy films in thermoelectric or other organic electronic devices.

Oxidation Kinetics of Chemically Vapor-Deposited Silicon Carbide in Wet Oxygen

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.

1994-01-01

The oxidation kinetics of chemically vapor-deposited SiC in dry oxygen and wet oxygen (P(sub H2O) = 0.1 atm) at temperatures between 1200 C and 1400 C were monitored using thermogravimetric analysis. It was found that in a clean environment, 10% water vapor enhanced the oxidation kinetics of SiC only very slightly compared to rates found in dry oxygen. Oxidation kinetics were examined in terms of the Deal and Grove model for oxidation of silicon. It was found that in an environment containing even small amounts of impurities, such as high-purity Al2O3 reaction tubes containing 200 ppm Na, water vapor enhanced the transport of these impurities to the oxidation sample. Oxidation rates increased under these conditions presumably because of the formation of less protective sodium alumino-silicate scales.

Methodology for Producing a Uniform Distribution of UO2 in a Tungsten Matrix

NASA Technical Reports Server (NTRS)

Tucker, Dennis S.; O'Conner, Andrew; Hickman, Rickman; Broadway, Jeramie; Belancik, Grace

2015-01-01

Current work at NASA's Marshall Space Flight Center (MSFC) is focused on the development CERMET fuel materials for Nuclear Thermal Propulsion (NTP). The CERMETs consist of uranium dioxide (UO2) fuel particles embedded in a tungsten (W) metal matrix. Initial testing of W-UO2 samples fabricated from fine angular powders performed reasonably well, but suffered from significant fuel loss during repeated thermal cycling due to agglomeration of the UO2 (1). The blended powder mixtures resulted in a non-uniform dispersion of the UO2 particles in the tungsten matrix, which allows rapid vaporization of the interconnected UO2 from the sample edges into the bulk material. Also, the angular powders create areas of stress concentrations due to thermal expansion mismatch, which eventually cracks the tungsten matrix. Evenly coating spherical UO2 particles with chemical vapor deposited (CVD) tungsten prior to consolidation was previously demonstrated to provide improved performance. However, the CVD processing technology is expensive and not currently available. In order to reduce cost and enhance performance, a powder coating process has been developed at MSFC to produce a uniform distribution of the spherical UO2 particles in a tungsten matrix. The method involves utilization of a polyethylene binder during mixing which leads to fine tungsten powders clinging to the larger UO2 spherical particles. This process was developed using HfO2 as a surrogate for UO2. Enough powder was mixed to make 8 discs (2cm diameter x 8mm thickness) using spark plasma sintering. A uniaxial pressure of 50 MPa was used at four different temperatures (2 samples at each temperature). The first two samples were heated to 1400C and 1500C respectively for 5 minutes. Densities for these samples were less than 85% of theoretical, so the time at temperature was increased to 20 minutes for the remaining samples. The highest densities were achieved for the two samples sintered at 1700C (approx. 92% of

Preparing highly ordered glasses of discotic liquid crystalline systems by vapor deposition

NASA Astrophysics Data System (ADS)

Gujral, Ankit; Gomez, Jaritza; Bishop, Camille E.; Toney, Michael F.; Ediger, M. D.

Anisotropic molecular packing, particularly in highly ordered liquid-crystalline arrangements, has the potential for optimizing performance in organic electronic and optoelectronic applications. Here we show that physical vapor deposition can be used to prepare highly organized out-of-equilibrium (glassy) solids of discotic liquid-crystalline (LC) systems. Using grazing incidence x-ray scattering, we compare 3 systems: a rectangular columnar LC, a hexagonal columnar LC and a non-liquid crystal former. The packing motifs accessible by vapor deposition are highly organized and vary from face-on to edge-on columnar arrangements depending upon substrate temperature. A subset of these structures cannot be accessed under equilibrium conditions. The structures formed at a given substrate temperature can be understood as the result of the system partially equilibrating toward the structure of the free surface of the equilibrium liquid crystal. Consistent with this view, the structures formed are independent of the substrate material.

Ultrahigh Responsivity and Detectivity Graphene–Perovskite Hybrid Phototransistors by Sequential Vapor Deposition

PubMed Central

Chang, Po-Han; Liu, Shang-Yi; Lan, Yu-Bing; Tsai, Yi-Chen; You, Xue-Qian; Li, Chia-Shuo; Huang, Kuo-You; Chou, Ang-Sheng; Cheng, Tsung-Chin; Wang, Juen-Kai; Wu, Chih-I

2017-01-01

In this work, graphene-methylammonium lead iodide (MAPbI3) perovskite hybrid phototransistors fabricated by sequential vapor deposition are demonstrated. Ultrahigh responsivity of 1.73 × 107 A W−1 and detectivity of 2 × 1015 Jones are achieved, with extremely high effective quantum efficiencies of about 108% in the visible range (450–700 nm). This excellent performance is attributed to the ultra-flat perovskite films grown by vapor deposition on the graphene sheets. The hybrid structure of graphene covered with uniform perovskite has high exciton separation ability under light exposure, and thus efficiently generates photocurrents. This paper presents photoluminescence (PL) images along with statistical analysis used to study the photo-induced exciton behavior. Both uniform and dramatic PL intensity quenching has been observed over entire measured regions, consistently demonstrating excellent exciton separation in the devices. PMID:28422117

Fabrication of hollow boron-doped diamond nanostructure via electrochemical corrosion of a tungsten oxide template.

PubMed

Lim, Young-Kyun; Lee, Eung-Seok; Lee, Choong-Hyun; Lim, Dae-Soon

2018-08-10

In the study, a hollow boron-doped diamond (BDD) nanostructure electrode is fabricated to increase the reactive surface area for electrochemical applications. Tungsten oxide nanorods are deposited on the silicon substrate as a template by the hot filament chemical vapor deposition (HFCVD) method. The template is coated with a 100 nm BDD layer deposited by HFCVD to form a core-shell nanostructure. The WO x core is finally electrochemically dissolved to form hollow BDD nanostructure. The fabricated hollow BDD nanostructure electrode is investigated via scanning electron microscopy, transmission electron microscopy, and Raman spectroscopy. The specific surface areas of the electrodes were analyzed and compared by using Brunauer-Emmett-Teller method. Furthermore, cyclic voltammetry and chronocoulometry are used to investigate the electrochemical characteristics and the reactive surface area of the as-prepared hollow BDD nanostructure electrode. A hollow BDD nanostructure electrode exhibits a reactive area that is 15 times that of a planar BDD thin electrode.

Chemical vapor deposition of Mo tubes for fuel cladding applications

DOE PAGES

Beaux, Miles F.; Vodnik, Douglas R.; Peterson, Reuben J.; ...

2018-01-31

In this study, chemical vapor deposition (CVD) techniques have been evaluated for fabrication of free-standing 0.25 mm thick molybdenum tubes with the end goal of nuclear fuel cladding applications. In order to produce tubes with the wall thickness and microstructures desirable for this application, long deposition durations on the order of 50 h with slow deposition rates were employed. A standard CVD method, involving molybdenum pentachloride reduction by hydrogen, as well as a fluidized-bed CVD (FBCVD) method was applied towards these objectives. Characterization of the tubes produced in this manner revealed regions of material with fine grain microstructure and wallmore » thickness suitable for fuel cladding applications, but lacking necessary uniformity across the length of the tubes. Finally, a path forward for the production of freestanding molybdenum tubes that possess the desired properties across their entire length has been identified and can be accomplished by future optimization of the deposition system.« less

Chemical vapor deposition of Mo tubes for fuel cladding applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Beaux, Miles F.; Vodnik, Douglas R.; Peterson, Reuben J.

In this study, chemical vapor deposition (CVD) techniques have been evaluated for fabrication of free-standing 0.25 mm thick molybdenum tubes with the end goal of nuclear fuel cladding applications. In order to produce tubes with the wall thickness and microstructures desirable for this application, long deposition durations on the order of 50 h with slow deposition rates were employed. A standard CVD method, involving molybdenum pentachloride reduction by hydrogen, as well as a fluidized-bed CVD (FBCVD) method was applied towards these objectives. Characterization of the tubes produced in this manner revealed regions of material with fine grain microstructure and wallmore » thickness suitable for fuel cladding applications, but lacking necessary uniformity across the length of the tubes. Finally, a path forward for the production of freestanding molybdenum tubes that possess the desired properties across their entire length has been identified and can be accomplished by future optimization of the deposition system.« less

Criteria for significance of simultaneous presence of both condensible vapors and aerosol particles on mass transfer (deposition) rates

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.

1987-01-01

The simultaneous presence of aerosol particles and condensible vapors in a saturated boundary layer which may affect deposition rates to subcooled surfaces because of vapor-particle interactions is discussed. Scavenging of condensible vapors by aerosol particles may lead to increased particle size and decreased vapor mass fraction, which alters both vapor and particle deposition rates. Particles, if sufficiently concentrated, may also coagulate. Criteria are provided to assess the significance of such phenomena when particles are already present in the mainstream and are not created inside the boundary layer via homogeneous nucleation. It is determined that there is direct proportionality with: (1) the mass concentration of both condensible vapors and aerosol particles; and (2) the square of the boundary layer thickness to particle diameter ratio (delta d sub p) square. Inverse proportionality was found for mainstream to surface temperature difference if thermophoresis dominates particle transport. It is concluded that the square of the boundary layer thickness to particle diameter ratio is the most critical factor to consider in deciding when to neglect vapor-particle interactions.

Criteria for significance of simultaneous presence of both condensible vapors and aerosol particles on mass transfer (deposition) rates

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.

1986-01-01

The simultaneous presence of aerosol particles and condensible vapors in a saturated boundary layer which may affect deposition rates to subcooled surfaces because of vapor-particle interactions is discussed. Scavenging of condensible vapors by aerosol particles may lead to increased particle size and decreased vapor mass fraction, which alters both vapor and particle deposition rates. Particles, if sufficiently concentrated, may also coagulate. Criteria are provided to assess the significance of such phenomena when particles are already present in the mainstream and are not created inside the boundary layer via homogeneous nucleation. It is determined that there is direct proportionality with: (1) the mass concentration of both condensible vapors and aerosol particles; and (2) the square of the boundary layer thickness to particle diameter ratio (delta d sub p) square. Inverse proportionality was found for mainstream to surface temperature difference if thermophoresis dominates particle transport. It is concluded that the square of the boundary layer thickness to particle diameter ratio is the most critical factor to consider in deciding when to neglect vapor-particle interactions.

Large improvement of phosphorus incorporation efficiency in n-type chemical vapor deposition of diamond

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ohtani, Ryota; Yamamoto, Takashi; Janssens, Stoffel D.

2014-12-08

Microwave plasma enhanced chemical vapor deposition is a promising way to generate n-type, e.g., phosphorus-doped, diamond layers for the fabrication of electronic components, which can operate at extreme conditions. However, a deeper understanding of the doping process is lacking and low phosphorus incorporation efficiencies are generally observed. In this work, it is shown that systematically changing the internal design of a non-commercial chemical vapor deposition chamber, used to grow diamond layers, leads to a large increase of the phosphorus doping efficiency in diamond, produced in this device, without compromising its electronic properties. Compared to the initial reactor design, the dopingmore » efficiency is about 100 times higher, reaching 10%, and for a very broad doping range, the doping efficiency remains highly constant. It is hypothesized that redesigning the deposition chamber generates a higher flow of active phosphorus species towards the substrate, thereby increasing phosphorus incorporation in diamond and reducing deposition of phosphorus species at reactor walls, which additionally reduces undesirable memory effects.« less

Comparative Study of Solution Phase and Vapor Phase Deposition of Aminosilanes on Silicon Dioxide Surfaces

PubMed Central

Yadav, Amrita R.; Sriram, Rashmi; Carter, Jared A.; Miller, Benjamin L.

2014-01-01

The uniformity of aminosilane layers typically used for the modification of hydroxyl bearing surfaces such as silicon dioxide is critical for a wide variety of applications, including biosensors. However, in spite of many studies that have been undertaken on surface silanization, there remains a paucity of easy-to-implement deposition methods reproducibly yielding smooth aminosilane monolayers. In this study, solution- and vapor-phase deposition methods for three aminoalkoxysilanes differing in the number of reactive groups (3-aminopropyl triethoxysilane (APTES), 3-aminopropyl methyl diethoxysilane (APMDES) and 3-aminopropyl dimethyl ethoxysilane (APDMES)) were assessed with the aim of identifying methods that yield highly uniform and reproducible silane layers that are resistant to minor procedural variations. Silane film quality was characterized based on measured thickness, hydrophilicity and surface roughness. Additionally, hydrolytic stability of the films was assessed via these thickness and contact angle values following desorption in water. We found that two simple solution-phase methods, an aqueous deposition of APTES and a toluene based deposition of APDMES, yielded high quality silane layers that exhibit comparable characteristics to those deposited via vapor-phase methods. PMID:24411379

Molybdenum-copper and tungsten-copper alloys and method of making

DOEpatents

Schmidt, Frederick A.; Verhoeven, John D.; Gibson, Edwin D.

1989-05-23

Molybdenum-copper and tungsten-copper alloys are prepared by a consumable electrode method in which the electrode consists of a copper matrix with embedded strips of refractory molybdenum or tungsten. The electrode is progressively melted at its lower end with a superatmospheric inert gas pressure maintained around the liquifying electrode. The inert gas pressure is sufficiently above the vapor pressure of copper at the liquidus temperature of the alloy being formed to suppress boiling of liquid copper.

Molybdenum-copper and tungsten-copper alloys and method of making

DOEpatents

Schmidt, F.A.; Verhoeven, J.D.; Gibson, E.D.

1989-05-23

Molybdenum-copper and tungsten-copper alloys are prepared by a consumable electrode method in which the electrode consists of a copper matrix with embedded strips of refractory molybdenum or tungsten. The electrode is progressively melted at its lower end with a superatmospheric inert gas pressure maintained around the liquefying electrode. The inert gas pressure is sufficiently above the vapor pressure of copper at the liquidus temperature of the alloy being formed to suppress boiling of liquid copper. 6 figs.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

Some observations on uranium carbide alloy/tungsten compatibility

NASA Technical Reports Server (NTRS)

Phillips, W. M.

1972-01-01

Chemical compatibility between both pure and thoriated tungsten and uranium carbide alloys was studied at 1800 C for up to 3300 hours. Alloying with zirconium carbide appeared to widen the homogeneity range of uranium carbide, making additional carbon available for reaction with the tungsten. Reaction layers were formed both by vapor phase reaction and by physical contact, producing either or both UWC2 and W2C, dependent upon the phases present in the starting fuel alloy. Formation of UWC2 results in slow growth of the reaction layer with time, while W2C reaction layers grow rapidly, allowing equilibrium to be reached in less than 2500 hours at 1800 C. The presence of a thermal gradient had no effect on the reactions observed nor did the presence of thoria in the tungsten clad.

Aerosol chemical vapor deposition of metal oxide films

DOEpatents

Ott, Kevin C.; Kodas, Toivo T.

1994-01-01

A process of preparing a film of a multicomponent metal oxide including: forming an aerosol from a solution comprised of a suitable solvent and at least two precursor compounds capable of volatilizing at temperatures lower than the decomposition temperature of said precursor compounds; passing said aerosol in combination with a suitable oxygen-containing carrier gas into a heated zone, said heated zone having a temperature sufficient to evaporate the solvent and volatilize said precursor compounds; and passing said volatilized precursor compounds against the surface of a substrate, said substrate having a sufficient temperature to decompose said volatilized precursor compounds whereby metal atoms contained within said volatilized precursor compounds are deposited as a metal oxide film upon the substrate is disclosed. In addition, a coated article comprising a multicomponent metal oxide film conforming to the surface of a substrate selected from the group consisting of silicon, magnesium oxide, yttrium-stabilized zirconium oxide, sapphire, or lanthanum gallate, said multicomponent metal oxide film characterized as having a substantially uniform thickness upon said FIELD OF THE INVENTION The present invention relates to the field of film coating deposition techniques, and more particularly to the deposition of multicomponent metal oxide films by aerosol chemical vapor deposition. This invention is the result of a contract with the Department of Energy (Contract No. W-7405-ENG-36).

Experimental verification of corrosive vapor deposition rate theory in high velocity burner rigs

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Santoro, G. J.

1986-01-01

The ability to predict deposition rates is required to facilitate modelling of high temperature corrosion by fused salt condensates in turbine engines. A corrosive salt vapor deposition theory based on multicomponent chemically frozen boundary layers (CFBL) has been successfully verified by high velocity burner rig experiments. The experiments involved internally air-impingement cooled, both rotating full and stationary segmented cylindrical collectors located in the crossflow of sodium-seeded combustion gases. Excellent agreement is found between the CFBL theory an the experimental measurements for both the absolute amounts of Na2SO4 deposition rates and the behavior of deposition rate with respect to collector temperature, mass flowrate (velocity) and Na concentration.

Experimental verification of corrosive vapor deposition rate theory in high velocity burner rigs

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.; Santoro, Gilbert J.

1986-01-01

The ability to predict deposition rates is required to facilitate modelling of high temperature corrosion by fused salt condensates in turbine engines. A corrosive salt vapor deposition theory based on multicomponent chemically frozen boundary layers (CFBL) has been successfully verified by high velocity burner rig experiments. The experiments involved internally air-impingement cooled, both rotating full and stationary segmented cylindrical collectors located in the crossflow of sodium-seeded combustion gases. Excellent agreement is found between the CFBL theory and the experimental measurements for both the absolute amounts of Na2SO4 deposition rates and the behavior of deposition rate with respect to collector temperature, mass flowrate (velocity) and Na concentration.

Vacuum Arc Vapor Deposition Method and Apparatus for Applying Identification Symbols to Substrates

NASA Technical Reports Server (NTRS)

Schramm, Harry F. (Inventor); Roxby, Donald L. (Inventor); Weeks, Jack L. (Inventor)

2002-01-01

An apparatus for applying permanent markings onto products using a Vacuum Arc Vapor Deposition (VAVD) marker by accelerating atoms or molecules from a vaporization source onto a substrate to form human and/or machine-readable part identification marking that can be detected optically or via a sensing device like x-ray, thermal imaging, ultrasound, magneto-optic, micro-power impulse radar, capacitance, or other similar sensing means. The apparatus includes a housing with a nozzle having a marking end. A chamber having an electrode, a vacuum port and a charge is located within the housing. The charge is activated by the electrode in a vacuum environment and deposited onto a substrate at the marking end of the nozzle. The apparatus may be a hand-held device or be disconnected from the handle and mounted to a robot or fixed station.

Thermodynamic Analysis and Growth of Zirconium Carbide by Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Wei, Sun; Hua, Hao Zheng; Xiang, Xiong

Equilibrium calculations were used to optimize conditions for the chemical vapor deposition of zirconium carbide from zirconium halide + CxHy+H2+Ar system. The results show the CVD-ZrC phase diagram is divided into ZrC+C, ZrC and ZrC+Zr zones by C, Zr generating lines. For the same mole of ZrCl4 reactant, it needs higher concentration of CH4 to generate single ZrC phase than that of C3H6. Using these calculations as a guide, single-phase cubic zirconium carbide coatings were deposited onto graphite substrate.

Vapor deposition of molybdenum oxide using bis(ethylbenzene) molybdenum and water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drake, Tasha L.; Stair, Peter C., E-mail: pstair@u.northwestern.edu

2016-09-15

Three molybdenum precursors—bis(acetylacetonate) dioxomolybdenum, molybdenum isopropoxide, and bis(ethylbenzene) molybdenum—were tested for molybdenum oxide vapor deposition. Quartz crystal microbalance studies were performed to monitor growth. Molybdenum isopropoxide and bis(ethylbenzene) molybdenum achieved linear growth rates 0.01 and 0.08 Å/cycle, respectively, using atomic layer deposition techniques. Negligible MoO{sub x} growth was observed on alumina powder using molybdenum isopropoxide, as determined by inductively coupled plasma optical emission spectroscopy. Bis(ethylbenzene) molybdenum achieved loadings of 0.5, 1.1, and 1.9 Mo/nm{sup 2} on alumina powder after one, two, and five cycles, respectively, using atomic layer deposition techniques. The growth window for bis(ethylbenzene) molybdenum is 135–150 °C. An alternative pulsingmore » strategy was also developed for bis(ethylbenzene) molybdenum that results in higher growth rates in less time compared to atomic layer deposition techniques. The outlined process serves as a methodology for depositing molybdenum oxide for catalytic applications. All as-deposited materials undergo further calcination prior to characterization and testing.« less

Maps showing mineral resource assessment for skarn deposits of gold, silver, copper, tungsten, and iron in the Butte 1 degree by 2 degrees Quadrangle, Montana

USGS Publications Warehouse

Elliott, J.E.; Wallace, C.A.; Lee, G.K.; Antweiler, J.C.; Lidke, D.J.; Rowan, L.C.; Hanna, W.F.; Trautwein, C.M.; Dwyer, John L.; Moll, S.H.

1992-01-01

The purpose of this report is to assess the potential for undiscovered skarn deposits of gold, silver, copper, tungsten, and iron in the Butte 1 °X2° quadrangle. Other deposit types have been assessed and reports for each of the following have been prepared: Vein and replacement deposits of gold, silver, copper, lead, zinc, ·manganese, and tungsten; porphyry-stockwork deposits of copper, molybdenum, and tungsten; stockwork-disseminated deposits of gold and silver; placer deposits of gold; and miscellaneous deposit types including strata-bound deposits of copper and silver in rocks of the Middle Proterozoic Belt Supergroup, phosphate deposits in the Permian Phosporia Formation, and deposits of barite and fluorite. The Butte quadrangle, in west-central Montana, is one of the most mineralized and productive mining regions in the U.S. Its mining districts, including the world famous Butte or Summit Valley district, have produced a variety of metallic and nonmetallic mineral commodities valued at more than $6.4 billion (at the time of production). Because of its importance as a mineral producing region, the Butte quadrangle was selected for study by the U.S. Geological Survey under the Conterminous United States Mineral Assessment Program (CUSMAP). Under this program, new data on geology, geochemistry, geophysics, geochronology, mineral resources, and remote sensing were collected and synthesized. The field and laboratory studies were supported, in part, by funding from the Geologic Framework and Synthesis Program and the Wilderness Program. The methods used in resource assessment include a compilation of all data into data sets, the development of an occurrence model for skarn deposits in the quadrangle, and the analysis of data using techniques provided by a Geographic Information System (GIS). This map is one of a number of reports and maps on the Butte 1 °X2° quadrangle. Other publications resulting from this study include U.S. Geological Survey (USGS

Nanoscale investigation of platinum nanoparticles on strontium titanium oxide grown via physical vapor deposition and atomic layer deposition

NASA Astrophysics Data System (ADS)

Christensen, Steven Thomas

This dissertation examines growth of platinum nanoparticles from vapor deposition on SrTiO3 using a characterization approach that combines imaging techniques and X-ray methods. The primary suite of characterization probes includes atomic force microscopy (AFM), grazing-incidence small-angle X-ray scattering (GISAXS), X-ray fluorescence (XRF), scanning electron microscopy (SEM), and X-ray absorption spectroscopy (XAS). The vapor deposition techniques include physical vapor deposition (PVD) by evaporation and atomic layer deposition (ALD). For the PVD platinum study, AFM/XRF showed ˜10 nm nanoparticles separated by an average of 100 nm. The combination of AFM, GISAXS, and XRF indicated that the nanoparticles observed with AFM were actually comprised of closely spaced, smaller nanoparticles. These conclusions were supported by high-resolution SEM. The unusual behavior of platinum nanoparticles to aggregate without coalescence or sintering was observed previously by other researchers using transmissision electron microscopy (TEM). Platinum nanoparticle growth was also investigated on SrTiO3 (001) single crystals using ALD to nucleate nanoparticles that subsequently grew and coalesced into granular films as the ALD progresses. The expected growth rate for the early stages of ALD showed a two-fold increase which was attributed to the platinum deposition occurring faster on the bare substrate. Once the nanoparticles had coalesced into a film, steady state ALD growth proceeded. The formation of nanoparticles was attributed to the atomic diffusion of platinum atoms on the surface in addition to direct growth from the ALD precursor gases. The platinum ALD nanoparticles were also studied on SrTiO3 nanocube powders. The SrTiO3 nanocubes average 60 nm on a side and the cube faces have a {001} orientation. The ALD proceeded in a similar fashion as on the single crystal substrates where the deposition rate was twice as fast as the steady state growth rate. The Pt nanoparticle

Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers.

PubMed

Matthews, Kristopher; Cruden, Brett A; Chen, Bin; Meyyappan, M; Delzeit, Lance

2002-10-01

Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

Plasma-enhanced chemical vapor deposition of multiwalled carbon nanofibers

NASA Technical Reports Server (NTRS)

Matthews, Kristopher; Cruden, Brett A.; Chen, Bin; Meyyappan, M.; Delzeit, Lance

2002-01-01

Plasma-enhanced chemical vapor deposition is used to grow vertically aligned multiwalled carbon nanofibers (MWNFs). The graphite basal planes in these nanofibers are not parallel as in nanotubes; instead they exhibit a small angle resembling a stacked cone arrangement. A parametric study with varying process parameters such as growth temperature, feedstock composition, and substrate power has been conducted, and these parameters are found to influence the growth rate, diameter, and morphology. The well-aligned MWNFs are suitable for fabricating electrode systems in sensor and device development.

Effects of deposition temperature and ammonia flow on metal-organic chemical vapor deposition of hexagonal boron nitride

NASA Astrophysics Data System (ADS)

Rice, Anthony; Allerman, Andrew; Crawford, Mary; Beechem, Thomas; Ohta, Taisuke; Spataru, Catalin; Figiel, Jeffrey; Smith, Michael

2018-03-01

The use of metal-organic chemical vapor deposition at high temperature is investigated as a means to produce epitaxial hexagonal boron nitride (hBN) at the wafer scale. Several categories of hBN films were found to exist based upon precursor flows and deposition temperature. Low, intermediate, and high NH3 flow regimes were found to lead to fundamentally different deposition behaviors. The low NH3 flow regimes yielded discolored films of boron sub-nitride. The intermediate NH3 flow regime yielded stoichiometric films that could be deposited as thick films. The high NH3 flow regime yielded self-limited deposition with thicknesses limited to a few mono-layers. A Langmuir-Hinshelwood mechanism is proposed to explain the onset of self-limited behavior for the high NH3 flow regime. Photoluminescence characterization determined that the intermediate and high NH3 flow regimes could be further divided into low and high temperature behaviors with a boundary at 1500 °C. Films deposited with both high NH3 flow and high temperature exhibited room temperature free exciton emission at 210 nm and 215.9 nm.

Hydrogen permeation properties of plasma-sprayed tungsten*1

NASA Astrophysics Data System (ADS)

Anderl, R. A.; Pawelko, R. J.; Hankins, M. R.; Longhurst, G. R.; Neiser, R. A.

1994-09-01

Tungsten has been proposed as a plasma-facing component material for advanced fusion facilities. This paper reports on laboratory-scale studies that were done to assess the hydrogen permeation properties of plasma-sprayed tungsten for such applications. The work entailed deuterium permeation measurements for plasma-sprayed (PS) tungsten coatings, sputter-deposited (SP) tungsten coatings, and steel substrate material using a mass-analyzed, 3 keV D 3+ ion beam with fluxes of ˜6.5 × 10 19 D/m 2 s. Extensive characterization analyses for the plasma-sprayed tungsten coatings were made using Auger spectrometry and scanning electron microscopy (SEM). Observed permeation rates through composite PS-tungsten/steel specimens were several orders of magnitude below the permeation levels observed for SP-tungsten/steel composite specimens and pure steel specimens. Characterization analyses indicated that the plasma-sprayed tungsten coating had a nonhomogeneous microstructure that consisted of splats with columnar solidification, partially-melted particles with grain boundaries, and void regions. Reduced permeation levels can be attributed to the complex microstructure and a substantial surface-connected porosity.

Plasma enhanced chemical vapor deposition of titanium nitride thin films using cyclopentadienyl cycloheptatrienyl titanium

NASA Astrophysics Data System (ADS)

Charatan, R. M.; Gross, M. E.; Eaglesham, D. J.

1994-10-01

The use of a low oxidation state Ti compound, cyclopentadienyl cycloheptatrienyl titanium, (C5H5) Ti(C7H7) (CPCHT), as a potential source for TiN and Ti in plasma enhanced chemical vapor deposition processes has been investigated. This precursor provides us with a new chemical vapor deposition route to TiN films that offer an interesting contrast to films deposited from Ti(IV) precursors. Film depositions were carried out by introducing CPCHT, with H2 carrier gas, into the downstream region of a NH3, N2, H2, or mixed H2/N2 plasma. Low resistivity (100-250 micro-ohm cm) nitrogen-rich TiN films with little carbon or oxygen incorporation and good conformality were deposited with activated N2 or NH3 at deposition temperatures of 300-600 C, inclusive. Mixed H2/N2 plasmas resulted in more stoichiometric TiN films with similar properties. The most striking feature of these films is the absence of columnar grain growth, in contrast to TiN films deposited using TiCl4 or Ti(NR(2))(4). Although the film texture was influenced by the plasma gas, the average grain size of the films deposited using activated N2 and NH3 was similar. The TiN films that we deposited were effective diffusion barriers between aluminum and silicon up to 575 C. Depositions using activated H2 resulted in films with significantly less carbon than CPCHT, but still having a minimum of 2.7:1 C:Ti. The lower oxidation state of the precursor did not facilitate the deposition of a Ti-rich film. No depositions were observed with any of the reactant gases in the absence of plasmas activation.

Development and study of chemical vapor deposited tantalum base alloys

NASA Technical Reports Server (NTRS)

Meier, G. H.; Bryant, W. A.

1976-01-01

A technique for the chemical vapor deposition of alloys was developed. The process, termed pulsing, involves the periodic injection of reactant gases into a previously-evacuated reaction chamber where they blanket the substrate almost instantaneously. Formation of alternating layers of the alloy components and subsequent homogenization allows the formation of an alloy of uniform composition with the composition being determined by the duration and relative numbers of the various cycles. The technique has been utilized to produce dense alloys of uniform thickness and composition (Ta- 10 wt % W) by depositing alternating layers of Ta and W by the hydrogen reduction of TaCl5 and WCl6. A similar attempt to deposit a Ta - 8 wt % W - 2 wt% Hf alloy was unsuccessful because of the difficulty in reducing HfCl4 at temperatures below those at which gas phase nucleation of Ta and W occurred.

Comparative study of solution-phase and vapor-phase deposition of aminosilanes on silicon dioxide surfaces.

PubMed

Yadav, Amrita R; Sriram, Rashmi; Carter, Jared A; Miller, Benjamin L

2014-02-01

The uniformity of aminosilane layers typically used for the modification of hydroxyl bearing surfaces such as silicon dioxide is critical for a wide variety of applications, including biosensors. However, in spite of many studies that have been undertaken on surface silanization, there remains a paucity of easy-to-implement deposition methods reproducibly yielding smooth aminosilane monolayers. In this study, solution- and vapor-phase deposition methods for three aminoalkoxysilanes differing in the number of reactive groups (3-aminopropyl triethoxysilane (APTES), 3-aminopropyl methyl diethoxysilane (APMDES) and 3-aminopropyl dimethyl ethoxysilane (APDMES)) were assessed with the aim of identifying methods that yield highly uniform and reproducible silane layers that are resistant to minor procedural variations. Silane film quality was characterized based on measured thickness, hydrophilicity and surface roughness. Additionally, hydrolytic stability of the films was assessed via these thickness and contact angle values following desorption in water. We found that two simple solution-phase methods, an aqueous deposition of APTES and a toluene based deposition of APDMES, yielded high quality silane layers that exhibit comparable characteristics to those deposited via vapor-phase methods. Copyright © 2013 Elsevier B.V. All rights reserved.

Qualification of tungsten coatings on plasma-facing components for JET

NASA Astrophysics Data System (ADS)

Maier, H.; Neu, R.; Greuner, H.; Böswirth, B.; Balden, M.; Lindig, S.; Matthews, G. F.; Rasinski, M.; Wienhold, P.; Wiltner, A.

2009-12-01

This contribution summarizes the work that has been performed to establish the industrial production of tungsten coatings on carbon fibre composite (CFC) for application within the ITER-like Wall Project at JET. This comprises the investigation of vacuum plasma-sprayed coatings, physical vapour deposited tungsten/rhenium multilayers, as well as coatings deposited by combined magnetron-sputtering and ion implantation. A variety of analysis tools were applied to investigate failures and oxide and carbide formation in these systems.

Buoyancy-Driven Heat Transfer During Application of a Thermal Gradient for the Study of Vapor Deposition at Low Pressure Using and Ideal Gas

NASA Technical Reports Server (NTRS)

Frazier, D. O.; Hung, R. J.; Paley, M. S.; Penn, B. G.; Long, Y. T.

1996-01-01

A mathematical model has been developed to determine heat transfer during vapor deposition of source materials under a variety of orientations relative to gravitational accelerations. The model demonstrates that convection can occur at total pressures as low as 10-2 mm Hg. Through numerical computation, using physical material parameters of air, a series of time steps demonstrates the development of flow and temperature profiles during the course of vapor deposition. These computations show that in unit gravity vapor deposition occurs by transport through a fairly complicated circulating flow pattern when applying heat to the bottom of the vessel with parallel orientation with respect to the gravity vector. The model material parameters for air predict the effect of kinematic viscosity to be of the same order as thermal diffusivity, which is the case for Prandtl number approx. 1 fluids. Qualitative agreement between experiment and the model indicates that 6-(2-methyl-4-nitroanilino)-2,4-hexadiyn-l-ol (DAMNA) at these pressures indeed approximates an ideal gas at the experiment temperatures, and may validate the use of air physical constants. It is apparent that complicated nonuniform temperature distribution in the vapor could dramatically affect the homogeneity, orientation, and quality of deposited films. The experimental test i's a qualitative comparison of film thickness using ultraviolet-visible spectroscopy on films generated in appropriately oriented vapor deposition cells. In the case where heating of the reaction vessel occurs from the top, deposition of vapor does not normally occur by convection due to a stable stratified medium. When vapor deposition occurs in vessels heated at the bottom, but oriented relative to the gravity vector between these two extremes, horizontal thermal gradients induce a complex flow pattern. In the plane parallel to the tilt axis, the flow pattern is symmetrical and opposite in direction from that where the vessel is

Tip-Enhanced Raman Scattering Imaging of Two-Dimensional Tungsten Disulfide with Optimized Tip Fabrication Process.

PubMed

Lee, Chanwoo; Kim, Sung Tae; Jeong, Byeong Geun; Yun, Seok Joon; Song, Young Jae; Lee, Young Hee; Park, Doo Jae; Jeong, Mun Seok

2017-01-13

We successfully achieve the tip-enhanced nano Raman scattering images of a tungsten disulfide monolayer with optimizing a fabrication method of gold nanotip by controlling the concentration of etchant in an electrochemical etching process. By applying a square-wave voltage supplied from an arbitrary waveform generator to a gold wire, which is immersed in a hydrochloric acid solution diluted with ethanol at various ratios, we find that both the conical angle and radius of curvature of the tip apex can be varied by changing the ratio of hydrochloric acid and ethanol. We also suggest a model to explain the origin of these variations in the tip shape. From the systematic study, we find an optimal condition for achieving the yield of ~60% with the radius of ~34 nm and the cone angle of ~35°. Using representative tips fabricated under the optimal etching condition, we demonstrate the tip-enhanced Raman scattering experiment of tungsten disulfide monolayer grown by a chemical vapor deposition method with a spatial resolution of ~40 nm and a Raman enhancement factor of ~4,760.

Characterization of Metalorganic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Jesser, W. A.

1998-01-01

A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

Initiated chemical vapor deposition polymers for high peak-power laser targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baxamusa, Salmaan H.; Lepro, Xavier; Lee, Tom

2016-12-05

Here, we report two examples of initiated chemical vapor deposition (iCVD) polymers being developed for use in laser targets for high peak-power laser systems. First, we show that iCVD poly(divinylbenzene) is more photo-oxidatively stable than the plasma polymers currently used in laser targets. Thick layers (10–12 μm) of this highly crosslinked polymer can be deposited with near-zero intrinsic film stress. Second, we show that iCVD epoxy polymers can be crosslinked after deposition to form thin adhesive layers for assembling precision laser targets. The bondlines can be made as thin as ~ 1 μm, approximately a factor of 2 thinner thanmore » achievable using viscous resin-based adhesives. These bonds can withstand downstream coining and stamping processes.« less

Low-pressure chemical vapor deposition of low in situ phosphorus doped silicon thin films

NASA Astrophysics Data System (ADS)

Sarret, M.; Liba, A.; Bonnaud, O.

1991-09-01

In situ low phosphorus doped silicon films are deposited onto glass substrates by low-pressure chemical vapor deposition method. The deposition parameters, temperature, total pressure, and pure silane gas flow are, respectively, fixed at 550 °C, 0.08 Torr, and 50 sccm. The varying deposition parameter is phosphine/silane mole ratio; when this ratio varies from 2×10-6 to 4×10-4, the phosphorus concentration and the resistivity after annealing, respectively, vary from 2×1018 to 3×1020 atoms cm-3 and from 1.5 Ω cm to 2.5×10-3 Ω cm.

Using atomic layer deposited tungsten to increase thermal conductivity of a packed bed

DOE PAGES

Van Norman, Staci A.; Tringe, Joseph W.; Sain, John D.; ...

2015-04-13

This paper investigated the effective thermal conductivity (k eff) of packed-beds that contained porous particles with nanoscale tungsten (W) films of different thicknesses formed by atomic layer deposition (ALD). A continuous film on the particles is vital towards increasing k eff of the packed beds. For example, the keff of an alumina packed bed was increased by three times after an ~8-nm continuous W film with 20 cycles of W ALD, whereas k eff was decreased on a polymer packed bed with discontinuous, evenly dispersed W-islands due to nanoparticle scattering of phonons. For catalysts, understanding the thermal properties of thesemore » packed beds is essential for developing thermally conductive supports as alternatives to structured supports.« less

Method of forming ultra thin film devices by vacuum arc vapor deposition

NASA Technical Reports Server (NTRS)

Schramm, Harry F. (Inventor)

2005-01-01

A method for providing an ultra thin electrical circuit integral with a portion of a surface of an object, including using a focal Vacuum Arc Vapor Deposition device having a chamber, a nozzle and a nozzle seal, depressing the nozzle seal against the portion of the object surface to create an airtight compartment in the chamber and depositing one or more ultra thin film layer(s) only on the portion of the surface of the object, the layers being of distinct patterns such that they form the circuit.

Glasses and Liquids Low on the Energy Landscape Prepared by Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Dalal, Shakeel; Fakhraai, Zahra; Ediger, Mark

2014-03-01

The lower portions of the potential energy landscape for glass-forming materials such as polymers and small molecules were historically inaccessible by experiments. Physical vapor deposition is uniquely able to prepare materials in this portion of the energy landscape, with the properties of the deposited material primarily modulated by the substrate temperature. Here we report on high-throughput experiments which utilize a temperature gradient stage to enable rapid screening of vapor-deposited organic glasses. Using ellipsometry, we characterize a 100 K range of substrate temperatures in a single experiment, allowing us to rapidly determine the density, kinetic stability, fictive temperature and molecular orientation of these glasses. Their properties fall into three temperature regimes. At substrate temperatures as low as 0.97Tg, we prepare materials which are equivalent to the supercooled liquid produced by cooling the melt. Below 0.9Tg (1.16TK) the properties of materials are kinetically controlled and highly tunable. At intermediate substrate temperatures we are able to produce materials whose bulk properties match those expected for the equilibrium supercooled liquid, down to 1.16TK, but are structurally anisotropic.

Spray Chemical Vapor Deposition of Single-Source Precursors for Chalcopyrite I-III-VI2 Thin-Film Materials

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; Banger, Kulbinder K.; Jin, Michael H.-C.; Harris, Jerry D.; McNatt, Jeremiah S.; Dickman, John E.

2008-01-01

Thin-film solar cells on flexible, lightweight, space-qualified substrates provide an attractive approach to fabricating solar arrays with high mass-specific power. A polycrystalline chalcopyrite absorber layer is among the new generation of photovoltaic device technologies for thin film solar cells. At NASA Glenn Research Center we have focused on the development of new single-source precursors (SSPs) for deposition of semiconducting chalcopyrite materials onto lightweight, flexible substrates. We describe the syntheses and thermal modulation of SSPs via molecular engineering. Copper indium disulfide and related thin-film materials were deposited via aerosol-assisted chemical vapor deposition using SSPs. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties to optimize device quality. Growth at atmospheric pressure in a horizontal hotwall reactor at 395 C yielded the best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier-, smoother-, and denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was one percent.

Near-Failure Detonation Behavior of Vapor-Deposited Hexanitrostilbene (HNS) Films

NASA Astrophysics Data System (ADS)

Knepper, Robert; Wixom, Ryan; Tappan, Alexander

2015-06-01

Physical vapor deposition is an attractive method to produce sub-millimeter explosive samples for studying detonation behavior at near-failure conditions. In this work, we examine hexanitrostilbene (HNS) films deposited onto polycarbonate substrates using vacuum thermal sublimation. Deposition conditions are varied in order to alter porosity in the films, and the resulting microstructures are quantified by analyzing ion-polished cross-sections using scanning electron microscopy. The effects of these changes in microstructure on detonation velocity and the critical thickness needed to sustain detonation are determined. The polycarbonate substrates can act as recording plates for detonation experiments, and films near the critical thickness display distinct patterns in the dent tracks that indicate instabilities in the detonation front when approaching failure conditions. Sandia National Laboratories is a multi-program laboratory managed and operated by Sandia Corporation, a wholly owned subsidiary of Lockheed Martin Corporation, for the U.S. Department of Energy's National Nuclear Security Administration under contract DE-AC04-94AL85000.

PLD deposition of tungsten carbide contact for diamond photodiodes. Influence of process conditions on electronic and chemical aspects

NASA Astrophysics Data System (ADS)

Cappelli, E.; Bellucci, A.; Orlando, S.; Trucchi, D. M.; Mezzi, A.; Valentini, V.

2013-08-01

Tungsten carbide, WC, contacts behave as very reliable Schottky contacts for opto-electronic diamond devices. Diamond is characterized by superior properties in high-power, high frequency and high-temperature applications, provided that thermally stable electrode contacts will be realized. Ohmic contacts can be easily achieved by using carbide-forming metals, while is difficult to get stable Schottky contacts at elevated temperatures, due to the interface reaction and/or inter-diffusion between metals and diamond. Novel type of contacts, made of tungsten carbide, WC, seem to be the best solution, for their excellent thermal stability, high melting point, oxidation and radiation resistance and good electrical conductivity. Our research was aimed at using pulsed laser deposition for WC thin film deposition, optimizing experimental parameters, to obtain a final device characterized by excellent electronic properties, as a detector for radiation in deep UV or as X-ray dosimeter. We deposited our films by laser ablation from a target of pure WC, using different reaction conditions (i.e., substrate heating, vacuum or reactive atmosphere (CH4/Ar), RF plasma activated), to optimize both the stoichiometry of the film and its structure. Trying to obtain a material with the best electronic response, we used also two sources of laser radiation for target ablation, i.e., nano-second pulsed excimer laser ArF, and ultra-short fs Ti:Sapphire laser. The structure and chemical aspects have been evaluated by Raman and X-ray photoelectron spectroscopy (XPS), while the dosimeter photodiode response has been tested by the I-V measurements, under soft X-ray irradiation.

Q-switched all-fiber laser with short pulse duration based on tungsten diselenide

NASA Astrophysics Data System (ADS)

Li, Wenyi; OuYang, Yuyi; Ma, Guoli; Liu, Mengli; Liu, Wenjun

2018-05-01

Fiber lasers are widely used in industrial processing, sensing, medical and communications applications due to their simple structure, good stability and low cost. With the rapid development of fiber lasers and the sustained improvement of industrial laser quality requirements, researchers in ultrafast optics focus on how to get laser pulses with high output power and narrow pulse duration. Q-switched technology is one of the most effective techniques to generate ultrashort pulses. In this paper, a tungsten diselenide saturable absorber with 16.82% modulation depth is prepared by chemical vapor deposition. Experimental results show that when the pump power changes from 115.7 mW to 630 mW, the all-fiber laser can achieve a stable Q-switched pulse output. The repetition rate of the output pulse varies from 80.32 kHz to 204.2 kHz, the pulse duration is 581 ns, the maximum output power is 17.1 mW and the maximum pulse energy is 83.7 nJ. Results in this paper show that tungsten diselenide can be applied to ultrafast optics, which is a kind of saturable absorption material with excellent properties.

Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

1974-01-01

Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800–1100°C, we report an increase inmore » the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm ₋1 to 2300 cm ₋1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Lastly, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100°C.« less

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

DOE PAGES

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun; ...

2016-01-29

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800–1100°C, we report an increase inmore » the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm ₋1 to 2300 cm ₋1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Lastly, Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100°C.« less

Large-Area Growth of Turbostratic Graphene on Ni(111) via Physical Vapor Deposition

PubMed Central

Garlow, Joseph A.; Barrett, Lawrence K.; Wu, Lijun; Kisslinger, Kim; Zhu, Yimei; Pulecio, Javier F.

2016-01-01

Single-layer graphene has demonstrated remarkable electronic properties that are strongly influenced by interfacial bonding and break down for the lowest energy configuration of stacked graphene layers (AB Bernal). Multilayer graphene with relative rotations between carbon layers, known as turbostratic graphene, can effectively decouple the electronic states of adjacent layers, preserving properties similar to that of SLG. While the growth of AB Bernal graphene through chemical vapor deposition has been widely reported, we investigate the growth of turbostratic graphene on heteroepitaxial Ni(111) thin films utilizing physical vapor deposition. By varying the carbon deposition temperature between 800 –1100 °C, we report an increase in the graphene quality concomitant with a transition in the size of uniform thickness graphene, ranging from nanocrystallites to thousands of square microns. Combination Raman modes of as-grown graphene within the frequency range of 1650 cm−1 to 2300 cm−1, along with features of the Raman 2D mode, were employed as signatures of turbostratic graphene. Bilayer and multilayer graphene were directly identified from areas that exhibited Raman characteristics of turbostratic graphene using high-resolution TEM imaging. Raman maps of the pertinent modes reveal large regions of turbostratic graphene on Ni(111) thin films at a deposition temperature of 1100 °C. PMID:26821604

Investigation of diamond deposition by chemical vapor transport with hydrogen

NASA Astrophysics Data System (ADS)

Piekarczyk, Wladyslaw; Messier, Russell F.; Roy, Rustum; Engdahl, Chris

1990-12-01

The carbon-hydrogen chemical vapor transport system was examined in accordance with a four-stage transport model. A result of this examination is that graphite co-deposition could be avoided when diamond is deposited from gas solutions under-saturated with respect to diamond. Actual deposition experiments showed that this unusual requirement can be fulfilled but only for the condition that the transport distance between the carbon source and the substrate surface is short. In such a case diamond can be deposited equally from super-saturated as well as from under-saturated gas solutions. On the basis of thermodynamic considerations a possible explanation of this unusual phenomenon is given. It is shown that there is a possibility of deposition of diamond from both super-saturated as well as under-saturated gas solutions but only on the condition that they are in a non-equilibrium state generally called the activated state. A model of the diamond deposition process consisting of two steps is proposed. In the first step diamond and graphite are deposited simultaneously. The most important carbon deposition reaction is C2H2(g) + 2 H(g) C(diamond graphite) + CH(g). The amount of co-deposited graphite is not a direct function of the saturation state of the gas phase. In the second step graphite is etched according to the most probable reaction C(graphite) + 4 H(g) CH4(g). Atomic hydrogen in a super-equilibrium concentration is necessary not only to etch graphite but also to precipitate and graphite. 1.

Maps showing mineral resource assessment for porphyry and stockwork deposits of copper, molybdenum, and tungsten and for stockwork and disseminated deposits of gold and silver in the Butte 1 degree by 2 degrees Quadrangle, Montana

USGS Publications Warehouse

Elliott, J.E.; Moll, S.H.; Wallace, C.A.; Lee, G.K.; Antweiler, J.C.; Lidke, D.J.; Rowan, L.C.; Hanna, W.F.; Trautwein, C.M.; Dwyer, John L.

1993-01-01

This report documents the assessment for potential occurrences of undiscovered porphyry and stockwork deposits of copper, molybdenum, and tungsten (porphyry Cu-Mo-W) and stockwork and disseminated deposits of gold and silver (disseminated Au-Ag) in the Butte 1 °X2° quadrangle. The Butte quadrangle, in west-central Montana, is one of the best known mineral producing regions in the U.S. Mining districts in the quadrangle, including the world famous Butte or Summit Valley district, have produced a variety of metallic and nonmetallic mineral commodities valued at more than $6.4 billion (at the time of production). Because of its importance as a mineral producing region, the Butte quadrangle was selected for study by the U.S. Geological Survey under the Conterminous United States Mineral Assessment Program (CUSMAP). Under this program, new data on geology, geochemistry, geophysics, geochronology, mineral resources, and remote sensing were collected and synthesized. The field and laboratory studies were supported, in part, by funding from the Geologic Framework and Synthesis Program and the Wilderness Program. The methods used in this resource assessment for porphyry Cu-Mo-W and disseminated Au-Ag deposits in the quadrangle include a compilation of all data, the development of descriptive occurrence models, and the analysis of data using techniques provided by a Geographic Information System (GIS). This map is one of several maps on the Butte 1 °X2° quadrangle. Other deposit types have been assessed for the Butte quadrangle, and maps (U.S. Geological Survey (USGS) Miscellaneous Investigation Series Maps) for each of the following have been prepared: Vein and replacement deposits of gold, silver, copper, lead, zinc, manganese, and tungsten (Elliott, Wallace, and others, 1992a) and skarn deposits of gold, silver, copper, tungsten, and iron (Elliott and others, 1992b ). Other publications resulting from this study include linear features map (Rowan and others, 1991

Using deposition rate to increase the thermal and kinetic stability of vapor-deposited hole transport layer glasses via a simple sublimation apparatus

NASA Astrophysics Data System (ADS)

Kearns, Kenneth L.; Krzyskowski, Paige; Devereaux, Zachary

2017-05-01

Deposition rate is known to affect the relative stability of vapor-deposited glasses; slower rates give more stable materials due to enhanced mobility at the free surface of the film. Here we show that the deposition rate can affect both the thermodynamic and kinetic stabilities of N ,N' -bis(3-methylphenyl)-N ,N' -diphenylbenzidine (TPD) and N ,N' -di-[(1-naphthyl)-N ,N' -diphenyl]-1,1'-biphenyl)-4,4'-diamine (NPD) glasses used as hole transport layers for organic light emitting diodes (OLEDs). A simple, low-vacuum glass sublimation apparatus and a high vacuum deposition chamber were used to deposit the glass. 50 μm thick films were deposited in the sublimation apparatus and characterized by differential scanning calorimetry while 75 nm thick films were prepared in the high vacuum chamber and studied by hot-stage spectroscopic ellipsometry (SE). The thermodynamic stability from both preparation chambers was consistent and showed that the fictive temperature (Tfictive) was more than 30 K lower than the conventional glass transition temperature (Tg) at the slowest deposition rates. The kinetic stability, measured as the onset temperature (Tonset) where the glass begins to transform into the supercooled liquid, was 16-17 K greater than Tg at the slowest rates. Tonset was systematically lower for the thin films characterized by SE and was attributed to the thickness dependent transformation of the glass into the supercooled liquid. These results show the first calorimetric characterization of the stability of glasses for OLED applications made by vapor deposition and the first direct comparison of deposition apparatuses as a function of the deposition rate. The ease of fabrication will create an opportunity for others to study the effect of deposition conditions on glass stability.

Two dimensional radial gas flows in atmospheric pressure plasma-enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kim, Gwihyun; Park, Seran; Shin, Hyunsu; Song, Seungho; Oh, Hoon-Jung; Ko, Dae Hong; Choi, Jung-Il; Baik, Seung Jae

2017-12-01

Atmospheric pressure (AP) operation of plasma-enhanced chemical vapor deposition (PECVD) is one of promising concepts for high quality and low cost processing. Atmospheric plasma discharge requires narrow gap configuration, which causes an inherent feature of AP PECVD. Two dimensional radial gas flows in AP PECVD induces radial variation of mass-transport and that of substrate temperature. The opposite trend of these variations would be the key consideration in the development of uniform deposition process. Another inherent feature of AP PECVD is confined plasma discharge, from which volume power density concept is derived as a key parameter for the control of deposition rate. We investigated deposition rate as a function of volume power density, gas flux, source gas partial pressure, hydrogen partial pressure, plasma source frequency, and substrate temperature; and derived a design guideline of deposition tool and process development in terms of deposition rate and uniformity.

Numerical simulation of the effects of dilution level, depth of inhalation, and smoke composition on nicotine vapor deposition during cigarette smoking.

PubMed

Ingebrethsen, Bradley J

2006-12-01

A numerical model of an aerosol containing vaporizable nicotine depositing to the walls of a tube was developed and applied to simulate the vapor deposition of nicotine in a denuder tube and under conditions approximating those in the respiratory tract during mainstream cigarette smoke inhalation. The numerical model was validated by comparison to data for denuder tube collection of nicotine from the smoke of three types of cigarette differing in smoke acidity and nicotine volatility. Simulations predict that the absorption of water by aerosol particles inhibits nicotine vapor deposition to tube walls, and that increased temperature, decreased tube diameter, and increased dilution enhance nicotine vapor deposition rate. The combined effect of changing these four parameters to approximate the transition from conducting to gas exchange regions of the respiratory tract was a significant net increase in predicted nicotine vapor deposition rate. Comparisons of nicotine deposition rates between conditions in the conducting airways and those in the gas exchange region were informative with regard to reported nicotine retention measurements during human smoking. Reports that vaporizable nicotine can penetrate past the conducting airways, that nicotine can be retained at near 100% efficiency from mainstream smoke, and that cigarettes with differing acidity and nicotine volatility have similar nicotine uptake rates are all shown to be consistent with the results of the model simulations.

Boron coating on boron nitride coated nuclear fuels by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Durmazuçar, Hasan H.; Gündüz, Güngör

2000-12-01

Uranium dioxide-only and uranium dioxide-gadolinium oxide (5% and 10%) ceramic nuclear fuel pellets which were already coated with boron nitride were coated with thin boron layer by chemical vapor deposition to increase the burn-up efficiency of the fuel during reactor operation. Coating was accomplished from the reaction of boron trichloride with hydrogen at 1250 K in a tube furnace, and then sintering at 1400 and 1525 K. The deposited boron was identified by infrared spectrum. The morphology of the coating was studied by using scanning electron microscope. The plate, grainy and string (fiber)-like boron structures were observed.

Chemical vapor deposition fluid flow simulation modelling tool

NASA Technical Reports Server (NTRS)

Bullister, Edward T.

1992-01-01

Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications.

Using atomic layer deposited tungsten to increase thermal conductivity of a packed bed

DOE Office of Scientific and Technical Information (OSTI.GOV)

Van Norman, Staci A.; Falconer, John L.; Weimer, Alan W., E-mail: alan.weimer@colorado.edu

2015-04-13

This study investigated the effective thermal conductivity (k{sub eff}) of packed-beds that contained porous particles with nanoscale tungsten (W) films of different thicknesses formed by atomic layer deposition (ALD). A continuous film on the particles is vital towards increasing k{sub eff} of the packed beds. For example, the k{sub eff} of an alumina packed bed was increased by three times after an ∼8-nm continuous W film with 20 cycles of W ALD, whereas k{sub eff} was decreased on a polymer packed bed with discontinuous, evenly dispersed W-islands due to nanoparticle scattering of phonons. For catalysts, understanding the thermal properties ofmore » these packed beds is essential for developing thermally conductive supports as alternatives to structured supports.« less

Formation of graphene on BN substrate by vapor deposition method and size effects on its structure

NASA Astrophysics Data System (ADS)

Giang, Nguyen Hoang; Hanh, Tran Thi Thu; Ngoc, Le Nhu; Nga, Nguyen To; Van Hoang, Vo

2018-04-01

We report MD simulation of the growth of graphene by the vapor deposition on a two-dimensional hBN substrate. The systems (containing carbon vapor and hBN substrate) are relaxed at high temperature (1500 K), and then it is cooled down to room one (300 K). Carbon atoms interact with the substrate via the Lennard-Jones potential while the interaction between carbon atoms is computed via the Tersoff potential. Depending on the size of the model, different crystalline honeycomb structures have been found. Structural properties of the graphene obtained at 300 K are studied by analyzing radial distribution functions (RDFs), coordination numbers, ring statistics, interatomic distances, bond-angle distributions and 2D visualization of atomic configurations. We find that the models containing various numbers of atoms have a honeycomb structure. Besides, differences in structural properties of graphene formed by the vapor deposition on the substrate and free standing one are found. Moreover, the size effect on the structure is significant.

Damping mechanisms in chemically vapor deposited SiC fibers

NASA Technical Reports Server (NTRS)

Dicarlo, James A.; Goldsby, Jon C.

1993-01-01

Evaluating the damping of reinforcement fibers is important for understanding their microstructures and the vibrational response of their structural composites. In this study the damping capacities of two types of chemically vapor deposited silicon carbide fibers were measured from -200 C to as high as 800 C. Measurements were made at frequencies in the range 50 to 15000 Hz on single cantilevered fibers. At least four sources were identified which contribute to fiber damping, the most significant being thermoelastic damping and grain boundary sliding. The mechanisms controlling all sources and their potential influence on fiber and composite performance are discussed.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, L.S.

1980-11-12

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR) is disclosed. Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Method of preparing high-temperature-stable thin-film resistors

DOEpatents

Raymond, Leonard S.

1983-01-01

A chemical vapor deposition method for manufacturing tungsten-silicide thin-film resistors of predetermined bulk resistivity and temperature coefficient of resistance (TCR). Gaseous compounds of tungsten and silicon are decomposed on a hot substrate to deposit a thin-film of tungsten-silicide. The TCR of the film is determined by the crystallinity of the grain structure, which is controlled by the temperature of deposition and the tungsten to silicon ratio. The bulk resistivity is determined by the tungsten to silicon ratio. Manipulation of the fabrication parameters allows for sensitive control of the properties of the resistor.

Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer

DOEpatents

Chow, Robert; Loomis, Gary E.; Thomas, Ian M.

1999-01-01

Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (.about.1.10-1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm.

Lateral epitaxial overgowth of GaAs by organometallic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Gale, R. P.; Mcclelland, R. W.; Fan, J. C. C.; Bozler, C. O.

1982-01-01

Lateral epitaxial overgrowth of GaAs by organometallic chemical vapor deposition has been demonstrated. Pyrolytic decomposition of trimethylgallium and arsine, without the use of HCl, was used to deposit GaAs on substrates prepared by coating (110) GaAs wafers with SiO2, then using photolithography to open narrow stripes in the oxide. Lateral overgrowth was seeded by epitaxial deposits formed on the GaAs surfaces exposed by the stripe openings. The extent of lateral overgrowth was investigated as a function of stripe orientation and growth temperature. Ratios of lateral to vertical growth rates greater than five have been obtained. The lateral growth is due to surface-kinetic control for the two-dimensional growth geometry studied. A continuous epitaxial GaAs layer 3 microns thick has been grown over a patterned mask on a GaAs substrate and then cleaved from the substrate.

Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kurapov, Denis; Reiss, Jennifer; Trinh, David H.

2007-07-15

Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl{sub 3}-O{sub 2}-Ar-H{sub 2} gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. Thesemore » changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.« less

Vapor transport deposition of antimony selenide thin film solar cells with 7.6% efficiency.

PubMed

Wen, Xixing; Chen, Chao; Lu, Shuaicheng; Li, Kanghua; Kondrotas, Rokas; Zhao, Yang; Chen, Wenhao; Gao, Liang; Wang, Chong; Zhang, Jun; Niu, Guangda; Tang, Jiang

2018-06-05

Antimony selenide is an emerging promising thin film photovoltaic material thanks to its binary composition, suitable bandgap, high absorption coefficient, inert grain boundaries and earth-abundant constituents. However, current devices produced from rapid thermal evaporation strategy suffer from low-quality film and unsatisfactory performance. Herein, we develop a vapor transport deposition technique to fabricate antimony selenide films, a technique that enables continuous and low-cost manufacturing of cadmium telluride solar cells. We improve the crystallinity of antimony selenide films and then successfully produce superstrate cadmium sulfide/antimony selenide solar cells with a certified power conversion efficiency of 7.6%, a net 2% improvement over previous 5.6% record of the same device configuration. We analyze the deep defects in antimony selenide solar cells, and find that the density of the dominant deep defects is reduced by one order of magnitude using vapor transport deposition process.

Metal organic chemical vapor deposition of 111-v compounds on silicon

DOEpatents

Vernon, Stanley M.

1986-01-01

Expitaxial composite comprising thin films of a Group III-V compound semiconductor such as gallium arsenide (GaAs) or gallium aluminum arsenide (GaAlAs) on single crystal silicon substrates are disclosed. Also disclosed is a process for manufacturing, by chemical deposition from the vapor phase, epitaxial composites as above described, and to semiconductor devices based on such epitaxial composites. The composites have particular utility for use in making light sensitive solid state solar cells.

Critical detonation thickness in vapor-deposited hexanitroazobenzene (HNAB) films with different preparation conditions

NASA Astrophysics Data System (ADS)

Tappan, Alexander; Knepper, Robert; Marquez, Michael; Ball, J.; Miller, Jill

2013-06-01

At Sandia National Laboratories, we have coined the term ``microenergetics'' to describe sub-millimeter energetic material studies aimed at gaining knowledge of combustion and detonation behavior at the mesoscale. Films of the high explosive hexanitroazobenzene (HNAB) have been deposited through physical vapor deposition. HNAB deposits in an amorphous state that crystallizes over time and modest heating accelerates this crystallization. HNAB films were prepared under different crystallization temperatures, and characterized with surface profilometry and scanning electron microscopy. The critical detonation thickness for HNAB at different crystallization conditions was determined in a configuration where charge width was large compared to film thickness, and thus side losses did not play a role in detonation propagation. The results of these experiments will be discussed in the context of small sample geometry, deposited film morphology, crystal structure, and density.

Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

1996-01-01

Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Understanding the Reaction Chemistry of 2,2':5',2''-Terthiophene Films with Vapor-Deposited Ag, Al, and Ca

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sang, Lingzi; Matz, Dallas L.; Pemberton, Jeanne E.

The reaction chemistry of vapor-deposited 2,2':5',2''-terthiophene (α-3T) solid-state thin films with postdeposited Ag, Al, and Ca is investigated in ultrahigh vacuum using Raman spectroscopy. Vapor-deposited Ag forms nanoparticles on these films and induces considerable surface enhanced Raman scattering (SERS) along with a change in molecular symmetry of adjacent α-3T and formation of Ag–S bonds; no other reaction chemistry is observed. Vapor-deposited Al and Ca undergo chemical reaction with α-3T initiated by metal-to-α-3T electron transfer. For Al, the resulting product is predominantly amorphous carbon through initial radical formation and subsequent decomposition reactions. For Ca, the spectral evidence suggests two pathways: onemore » leading to α-3T polymerization and the other resulting in thiophene ring opening, both initiated by radical formation through Ca-to-α-3T electron transfer. These interfacial reactions reflect the complex chemistry that can occur between low work function metals and thiophene-based oligomers. This reactivity is strongly correlated with metal work function.« less

Understanding the Reaction Chemistry of 2,2':5',2"-Terthiophene Films with Vapor-Deposited Ag, Al, and Ca

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sang, Lingzi; Matz, Dallas L.; Pemberton, Jeanne E.

The reaction chemistry of vapor-deposited 2,2':5',2''-terthiophene (α-3T) solid-state thin films with postdeposited Ag, Al, and Ca is investigated in ultrahigh vacuum using Raman spectroscopy. Vapor-deposited Ag forms nanoparticles on these films and induces considerable surface enhanced Raman scattering (SERS) along with a change in molecular symmetry of adjacent α-3T and formation of Ag–S bonds; no other reaction chemistry is observed. Vapor-deposited Al and Ca undergo chemical reaction with α-3T initiated by metal-to-α-3T electron transfer. For Al, the resulting product is predominantly amorphous carbon through initial radical formation and subsequent decomposition reactions. For Ca, the spectral evidence suggests two pathways: onemore » leading to α-3T polymerization and the other resulting in thiophene ring opening, both initiated by radical formation through Ca-to-α-3T electron transfer. These interfacial reactions reflect the complex chemistry that can occur between low work function metals and thiophene-based oligomers. This reactivity is strongly correlated with metal work function.« less

Properties of zinc tin oxide thin film by aerosol assisted chemical vapor deposition (AACVD)

NASA Astrophysics Data System (ADS)

Riza, Muhammad Arif; Rahman, Abu Bakar Abd; Sepeai, Suhaila; Ludin, Norasikin Ahmad; Teridi, Mohd Asri Mat; Ibrahim, Mohd Adib

2018-05-01

This study focuses on the properties of ZTO which have been deposited by a low-cost method namely aerosol assisted chemical vapor deposition (AACVD). The precursors used in this method were zinc acetate dihidrate and tin chloride dihydrate for ZTO thin film deposition. Both precursors were mixed and stirred until fully dissolved before deposition. The ZTO was deposited on borosilicate glass substrate for the investigation of optical properties. The films deposited have passed the scotch tape adherence test. XRD revealed that the crystal ZTO is slightly in the form of perovskite structure but several deteriorations were also seen in the spectrum. The UV-Vis analysis showed high transmittance of ˜85% and the band gap was calculated to be 3.85 eV. The average thickness of the film is around 284 nm. The results showed that the ZTO thin films have been successfully deposited by the utilization of AACVD method.

Direct determination of cadmium in foods by solid sampling electrothermal vaporization inductively coupled plasma mass spectrometry using a tungsten coil trap

NASA Astrophysics Data System (ADS)

Zhang, Ying; Mao, Xuefei; Liu, Jixin; Wang, Min; Qian, Yongzhong; Gao, Chengling; Qi, Yuehan

2016-04-01

In this work, a solid sampling device consisting of a tungsten coil trap, porous carbon vaporizer and on-line ashing furnace of a Ni-Cr coil was interfaced with inductively coupled plasma mass spectrometry (ICP-MS). A modified double gas circuit system was employed that was composed of carrier and supplemental gas lines controlled by separate gas mass flow controllers. For Cd determination in food samples using the assembled solid sampling ICP-MS, the optimal ashing and vaporization conditions, flow rate of the argon-hydrogen (Ar/H2) (v:v = 24:1) carrier gas and supplemental gas, and minimum sampling mass were investigated. Under the optimized conditions, the limit of quantification was 0.5 pg and the relative standard deviation was within a 10.0% error range (n = 10). Furthermore, the mean spiked recoveries for various food samples were 99.4%-105.9% (n = 6). The Cd concentrations measured by the proposed method were all within the certified values of the reference materials or were not significantly different (P > 0.05) from those of the microwave digestion ICP-MS method, demonstrating the good accuracy and precision of the solid sampling ICP-MS method for Cd determination in food samples.

Low-Temperature Process for Atomic Layer Chemical Vapor Deposition of an Al2O3 Passivation Layer for Organic Photovoltaic Cells.

PubMed

Kim, Hoonbae; Lee, Jihye; Sohn, Sunyoung; Jung, Donggeun

2016-05-01

Flexible organic photovoltaic (OPV) cells have drawn extensive attention due to their light weight, cost efficiency, portability, and so on. However, OPV cells degrade quickly due to organic damage by water vapor or oxygen penetration when the devices are driven in the atmosphere without a passivation layer. In order to prevent damage due to water vapor or oxygen permeation into the devices, passivation layers have been introduced through methods such as sputtering, plasma enhanced chemical vapor deposition, and atomic layer chemical vapor deposition (ALCVD). In this work, the structural and chemical properties of Al2O3 films, deposited via ALCVD at relatively low temperatures of 109 degrees C, 200 degrees C, and 300 degrees C, are analyzed. In our experiment, trimethylaluminum (TMA) and H2O were used as precursors for Al2O3 film deposition via ALCVD. All of the Al2O3 films showed very smooth, featureless surfaces without notable defects. However, we found that the plastic flexible substrate of an OPV device passivated with 300 degrees C deposition temperature was partially bended and melted, indicating that passivation layers for OPV cells on plastic flexible substrates need to be formed at temperatures lower than 300 degrees C. The OPV cells on plastic flexible substrates were passivated by the Al2O3 film deposited at the temperature of 109 degrees C. Thereafter, the photovoltaic properties of passivated OPV cells were investigated as a function of exposure time under the atmosphere.

Chemical vapor deposition of low reflective cobalt (II) oxide films

NASA Astrophysics Data System (ADS)

Amin-Chalhoub, Eliane; Duguet, Thomas; Samélor, Diane; Debieu, Olivier; Ungureanu, Elisabeta; Vahlas, Constantin

2016-01-01

Low reflective CoO coatings are processed by chemical vapor deposition from Co2(CO)8 at temperatures between 120 °C and 190 °C without additional oxygen source. The optical reflectivity in the visible and near infrared regions stems from 2 to 35% depending on deposition temperature. The combination of specific microstructural features of the coatings, namely a fractal ⿿cauliflower⿿ morphology and a grain size distribution more or less covering the near UV and IR wavelength ranges enhance light scattering and gives rise to a low reflectivity. In addition, the columnar morphology results in a density gradient in the vertical direction that we interpret as a refractive index gradient lowering reflectivity further down. The coating formed at 180 °C shows the lowest average reflectivity (2.9%), and presents an interesting deep black diffuse aspect.

Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

NASA Astrophysics Data System (ADS)

Selvamanickam, V.; Lee, H. G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K.

2003-10-01

SuperPower has been scaling up YBa 2Cu 3O x-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

International strategic mineral issues summary report: tungsten

USGS Publications Warehouse

Werner, Antony B.T.; Sinclair, W. David; Amey, Earle B.

1998-01-01

In 1995, China and the former Soviet Union accounted for over three-fourths of the world's mine production of tungsten. China alone produced about two-thirds of world output. Given its vast resources, China will likely maintain its prominent role in world tungsten supply. By the year 2020, changes in supply patterns are likely to result from declining output from individual deposits in Australia, Austria, and Portugal and the opening of new mines in Canada, China, and the United Kingdom.

Molecular Orientation in Two Component Vapor-Deposited Glasses: Effect of Substrate Temperature and Molecular Shape

NASA Astrophysics Data System (ADS)

Powell, Charles; Jiang, Jing; Walters, Diane; Ediger, Mark

Vapor-deposited glasses are widely investigated for use in organic electronics including the emitting layers of OLED devices. These materials, while macroscopically homogenous, have anisotropic packing and molecular orientation. By controlling this orientation, outcoupling efficiency can be increased by aligning the transition dipole moment of the light-emitting molecules parallel to the substrate. Light-emitting molecules are typically dispersed in a host matrix, as such, it is imperative to understand molecular orientation in two-component systems. In this study we examine two-component vapor-deposited films and the orientations of the constituent molecules using spectroscopic ellipsometry, UV-vis and IR spectroscopy. The role of temperature, composition and molecular shape as it effects molecular orientation is examined for mixtures of DSA-Ph in Alq3 and in TPD. Deposition temperature relative to the glass transition temperature of the two-component mixture is the primary controlling factor for molecular orientation. In mixtures of DSA-Ph in Alq3, the linear DSA-Ph has a horizontal orientation at low temperatures and slight vertical orientation maximized at 0.96Tg,mixture, analogous to one-component films.

Optical coatings of variable refractive index and high laser-resistance from physical-vapor-deposited perfluorinated amorphous polymer

DOEpatents

Chow, R.; Loomis, G.E.; Thomas, I.M.

1999-03-16

Variable index optical single-layers, optical multilayer, and laser-resistant coatings were made from a perfluorinated amorphous polymer material by physical vapor deposition. This was accomplished by physically vapor depositing a polymer material, such as bulk Teflon AF2400, for example, to form thin layers that have a very low refractive index (ca. 1.10--1.31) and are highly transparent from the ultra-violet through the near infrared regime, and maintain the low refractive index of the bulk material. The refractive index can be varied by simply varying one process parameter, either the deposition rate or the substrate temperature. The thus forming coatings may be utilized in anti-reflectors and graded anti-reflection coatings, as well as in optical layers for laser-resistant coatings at optical wavelengths of less than about 2000 nm. 2 figs.

The Corrosion Protection of Metals by Ion Vapor Deposited Aluminum

NASA Technical Reports Server (NTRS)

Danford, M. D.

1993-01-01

A study of the corrosion protection of substrate metals by ion vapor deposited aluminum (IVD Al) coats has been carried out. Corrosion protection by both anodized and unanodized IVD Al coats has been investigated. Base metals included in the study were 2219-T87 Al, 7075-T6 Al, Titanium-6 Al-4 Vanadium (Ti-6Al-4V), 4130 steel, D6AC steel, and 4340 steel. Results reveal that the anodized IVD Al coats provide excellent corrosion protection, but good protection is also achieved by IVD Al coats that have not been anodized.

Physical vapor deposition as a route to glasses with liquid crystalline order

NASA Astrophysics Data System (ADS)

Gomez, Jaritza

Physical vapor deposition (PVD) is an effective route to prepare glasses with a unique combination of properties. Substrate temperatures near the glass transition (Tg) and slow deposition rates can access enhanced mobility at the surface of the glass allowing molecules at the surface additional time to sample different molecular configurations. The temperature of the substrate can be used to control molecular mobility during deposition and properties in the resulting glasses such as higher density, kinetic stability and preferential molecular orientation. PVD was used to prepare glasses of itraconazole, a smectic A liquid crystal. We characterized molecular orientation using infrared and ellipsometry. Molecular orientation can be controlled by choice of Tsubstrate in a range of temperatures near Tg. Glasses deposited at Tsubstrate = Tg show nearly vertical molecular orientation relative to the substrate; at lower Tsubstrate, molecules are nearly parallel to the substrate. The molecular orientation depends on the temperature of the substrate during preparation and not on the molecular orientation of the underlying layer. This allows preparing samples of layers with differing orientations. We find these glasses are homogeneous solids without evidence of domain boundaries and are molecularly flat. We interpret the combination of properties obtained for vapor-deposited glasses of itraconazole to result from a process where molecular orientation is determined by the structure and dynamics at the free surface of the glass during deposition. We report the thermal and structural properties of glasses prepared using PVD of a rod-like molecule, posaconazole, which does not show equilibrium liquid crystal phases. These glasses show substantial molecular orientation that can be controlled by choice of Tsubstrate during deposition. Ellipsometry and IR indicate that glasses prepared at Tg - 3 K are highly ordered. At these Tsubstrate, molecules show preferential vertical

Development of refractory armored silicon carbide by infrared transient liquid phase processing

NASA Astrophysics Data System (ADS)

Hinoki, Tatsuya; Snead, Lance L.; Blue, Craig A.

2005-12-01

Tungsten (W) and molybdenum (Mo) were coated on silicon carbide (SiC) for use as a refractory armor using a high power plasma arc lamp at powers up to 23.5 MW/m 2 in an argon flow environment. Both tungsten powder and molybdenum powder melted and formed coating layers on silicon carbide within a few seconds. The effect of substrate pre-treatment (vapor deposition of titanium (Ti) and tungsten, and annealing) and sample heating conditions on microstructure of the coating and coating/substrate interface were investigated. The microstructure was observed by scanning electron microscopy (SEM) and optical microscopy (OM). The mechanical properties of the coated materials were evaluated by four-point flexural tests. A strong tungsten coating was successfully applied to the silicon carbide substrate. Tungsten vapor deposition and pre-heating at 5.2 MW/m 2 made for a refractory layer containing no cracks propagating into the silicon carbide substrate. The tungsten coating was formed without the thick reaction layer. For this study, small tungsten carbide grains were observed adjacent to the interface in all conditions. In addition, relatively large, widely scattered tungsten carbide grains and a eutectic structure of tungsten and silicon were observed through the thickness in the coatings formed at lower powers and longer heating times. The strength of the silicon carbide substrate was somewhat decreased as a result of the processing. Vapor deposition of tungsten prior to powder coating helped prevent this degradation. In contrast, molybdenum coating was more challenging than tungsten coating due to the larger coefficient of thermal expansion (CTE) mismatch as compared to tungsten and silicon carbide. From this work it is concluded that refractory armoring of silicon carbide by Infrared Transient Liquid Phase Processing is possible. The tungsten armored silicon carbide samples proved uniform, strong, and capable of withstanding thermal fatigue testing.

Chemical vapor deposition of Mo thin films from Mo(CO){sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, P.; Bond, J.; Westmore, T.

1995-12-01

Low levels of carbon and/or oxygen contamination in metallic thin films significantly alter the physical and chemical properties of these films often rendering them useless for any commercial applications. These impurities are often observed in films grown by a technique called metallorganic chemical vapor deposition (MOCVD). MOCVD films are grown by heating a substrate in the presence of a metallorganic precursor. We wish to identify the source(s) of contamination in films produced from the Group VIB metal hexacarbonyls, M(CO){sub 6}. Towards attaining this goal we have initiated studies on the elemental composition of thin films deposited by MOCVD using Mo(CO){submore » 6} as the precursor. The results obtained so far indicate that the level of contamination of the films partially depends on the deposition temperature. Our results will be compared to published work on films deposited by laser assisted CVD from Mo(CO){sub 6}.« less

Phase Equilibrium of TiO2 Nanocrystals in Flame-Assisted Chemical Vapor Deposition.

PubMed

Liu, Changran; Camacho, Joaquin; Wang, Hai

2018-01-19

Nano-scale titanium oxide (TiO 2 ) is a material useful for a wide range of applications. In a previous study, we showed that TiO 2 nanoparticles of both rutile and anatase crystal phases could be synthesized over the size range of 5 to 20 nm in flame-assisted chemical vapor deposition. Rutile was unexpectedly dominant in oxygen-lean synthesis conditions, whereas anatase is the preferred phase in oxygen-rich gases. The observation is in contrast to the 14 nm rutile-anatase crossover size derived from the existing crystal-phase equilibrium model. In the present work, we made additional measurements over a wider range of synthesis conditions; the results confirm the earlier observations. We propose an improved model for the surface energy that considers the role of oxygen desorption at high temperatures. The model successfully explains the observations made in the current and previous work. The current results provide a useful path to designing flame-assisted chemical vapor deposition of TiO 2 nanocrystals with controllable crystal phases. © 2018 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Plasma-induced damage of tungsten coatings on graphite limiters

NASA Astrophysics Data System (ADS)

Fortuna, E.; Rubel, M. J.; Psoda, M.; Andrzejczuk, M.; Kurzydowski, K. J.; Miskiewicz, M.; Philipps, V.; Pospieszczyk, A.; Sergienko, G.; Spychalski, M.; Zielinski, W.

2007-03-01

Vaccum plasma sprayed tungsten coatings with an evaporated sandwich Re-W interlayer on graphite limiter blocks were studied after the experimental campaign in the TEXTOR tokamak. The coating morphology was modified by high-heat loads and co-deposition of species from the plasma. Co-deposits contained fuel species, carbon, boron and silicon. X-ray diffractometer phase analysis indicated the coexistence of metallic tungsten and its carbides (WC and W2C) and boride (W2B). In the Re-W layer the presence of carbon was detected in a several micrometres thick zone. In the overheated part of the limiter, the Re-W layer was transformed into a sigma phase.

Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hemawan, Kadek W.; Gou, Huiyang; Hemley, Russell J.

2015-11-01

Polycrystalline diamond has been synthesized on silicon substrates at atmospheric pressure, using a microwave capillary plasma chemical vapor deposition technique. The CH4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C2, Ar, N2, CH, Hβ, and Hα were observed in the emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T2g phonon at 1333 cm-1 peak relative to the Raman features of graphitic carbon. Field emission scanning electron microscopy images reveal that, depending on the growth conditions, the carbon microstructures of grown films exhibit "coral" and "cauliflower-like" morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.

Study of nanostructure and ethanol vapor sensing performance of WO3 thin films deposited by e-beam evaporation method under different deposition angles: application in breath analysis devices

NASA Astrophysics Data System (ADS)

Amani, E.; Khojier, K.; Zoriasatain, S.

2018-01-01

This paper studies the effect of deposition angle on the crystallographic structure, surface morphology, porosity and subsequently ethanol vapor sensing performance of e-beam-evaporated WO3 thin films. The WO3 thin films were deposited by e-beam evaporation technique on SiO2/Si substrates under different deposition angles (0°, 30°, and 60°) and then post-annealed at 500 °C with a flow of oxygen for 4 h. Crystallographic structure and surface morphology of the samples were checked using X-ray diffraction method and atomic force microscopy, respectively. Physical adsorption isotherm was also used to measure the porosity and effective surface area of the samples. The electrical response of the samples was studied to different concentrations of ethanol vapor (10-50 ppm) at the temperature range of 140-260 °C and relative humidity of 80%. The results reveal that the WO3 thin film deposited under 30° angle shows more sensitivity to ethanol vapor than the other samples prepared in this work due to the more crystallinity, porosity, and effective surface area. The investigations also show that the sample deposited at 30° can be a good candidate as a breath analysis device at the operating temperature of 240 °C because of its high response, low detection limit, and reliability at high relative humidity.

Self-organization of SiO{sub 2} nanodots deposited by chemical vapor deposition using an atmospheric pressure remote microplasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Arnoult, G.; Belmonte, T.; Henrion, G.

Self-organization of SiO{sub 2} nanodots is obtained by chemical vapor deposition out of hexamethyldisiloxane (HMDSO) and atmospheric pressure remote Ar-O{sub 2} plasma operating at high temperature (1200-1600 K). The dewetting of the film being deposited when it is still thin enough (<500 nm) is found to be partly responsible for this self-organization. When the coating becomes thicker (approx1 mum), and for relatively high contents in HMDSO, SiO{sub 2} walls forming hexagonal cells are obtained on a SiO{sub 2} sublayer. For thicker coatings (>1 mum), droplet-shaped coatings with a Gaussian distribution in thickness over their width are deposited. The coatings aremore » submitted to high compressive stress. When it is relaxed, 'nestlike structures' made of nanoribbons are synthesized.« less

Novel Prospects for Plasma Spray-Physical Vapor Deposition of Columnar Thermal Barrier Coatings

NASA Astrophysics Data System (ADS)

Anwaar, Aleem; Wei, Lianglinag; Guo, Qian; Zhang, Baopeng; Guo, Hongbo

2017-12-01

Plasma spray-physical vapor deposition (PS-PVD) is an emerging coating technique that can produce columnar thermal barrier coatings from vapor phase. Feedstock treatment at the start of its trajectory in the plasma torch nozzle is important for such vapor-phase deposition. This study describes the effects of the plasma composition (Ar/He) on the plasma characteristics, plasma-particle interaction, and particle dynamics at different points spatially distributed inside the plasma torch nozzle. The results of calculations show that increasing the fraction of argon in the plasma gas mixture enhances the momentum and heat flow between the plasma and injected feedstock. For the plasma gas combination of 45Ar/45He, the total enthalpy transferred to a representative powder particle inside the plasma torch nozzle is highest ( 9828 kJ/kg). Moreover, due to the properties of the plasma, the contribution of the cylindrical throat, i.e., from the feed injection point (FIP) to the start of divergence (SOD), to the total transferred energy is 69%. The carrier gas flow for different plasma gas mixtures was also investigated by optical emission spectroscopy (OES) measurements of zirconium emissions. Yttria-stabilized zirconia (YSZ) coating microstructures were produced when using selected plasma gas compositions and corresponding carrier gas flows; structural morphologies were found to be in good agreement with OES and theoretical predictions. Quasicolumnar microstructure was obtained with porosity of 15% when applying the plasma composition of 45Ar/45He.

Method for producing microporous metal bodies

DOEpatents

Danko, Joseph C.

1982-01-01

Tungsten is vapor-deposited by hydrogen reduction of tungsten hexafluoride (WF.sub.6) to produce a tungsten body having from 40 to 100 ppm fluorine. The tungsten is then heated under vacuum to produce grain boundary porosity for a sufficient period of time to allow the pores along the grain boundaries to become interconnected.

Continuous roll-to-roll growth of graphene films by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Hesjedal, Thorsten

2011-03-01

Few-layer graphene is obtained in atmospheric chemical vapor deposition on polycrystalline copper in a roll-to-roll process. Raman and x-ray photoelectron spectroscopy were employed to confirm the few-layer nature of the graphene film, to map the inhomogeneities, and to study and optimize the growth process. This continuous growth process can be easily scaled up and enables the low-cost fabrication of graphene films for industrial applications.

Investigation of atypical molten pool dynamics in tungsten carbide-cobalt during laser deposition using in-situ thermal imaging

NASA Astrophysics Data System (ADS)

Xiong, Yuhong; Hofmeister, William H.; Smugeresky, John E.; Delplanque, Jean-Pierre; Schoenung, Julie M.

2012-01-01

An atypical "swirling" phenomenon observed during the laser deposition of tungsten carbide-cobalt cermets by laser engineered net shaping (LENS®) was studied using in-situ high-speed thermal imaging. To provide fundamental insight into this phenomenon, the thermal behavior of pure cobalt during LENS was also investigated for comparison. Several factors were considered as the possible source of the observed differences. Of those, phase difference, material emissivity, momentum transfer, and free surface disruption from the powder jets, and, to a lesser extent, Marangoni convection were identified as the relevant mechanisms.

Chemical vapor deposition modeling for high temperature materials

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.

1992-01-01

The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

Synthesis of zirconia (ZrO2) nanowires via chemical vapor deposition

NASA Astrophysics Data System (ADS)

Baek, M. K.; Park, S. J.; Choi, D. J.

2017-02-01

Monoclinic zirconia nanowires were synthesized by chemical vapor deposition using ZrCl4 powder as a starting material at 1200 °C and 760 Torr. Graphite was employed as a substrate, and an Au thin film was pre-deposited on the graphite as a catalyst. The zirconia nanostructure morphology was observed through scanning electron microscopy and transmission electron microscopy. Based on X-ray diffraction, selected area electron diffraction, and Raman spectroscopy data, the resulting crystal structure was found to be single crystalline monoclinic zirconia. The homogeneous distributions of Zr, O and Au were studied by scanning transmission electron microscopy with energy dispersive X-ray spectroscopy mapping, and there was no metal droplet at the nanowire tips despite the use of an Au metal catalyst. This result is apart from that of conventional metal catalyzed nanowires.

Testing of Wrought Iridium/Chemical Vapor Deposition Rhenium Rocket

NASA Technical Reports Server (NTRS)

Reed, Brian D.; Schneider, Steven J.

1996-01-01

A 22-N class, iridium/rhenium (Ir/Re) rocket chamber, composed of a thick (418 miocrometer) wrought iridium (Ir) liner and a rhenium substrate deposited via chemical vapor deposition, was tested over an extended period on gaseous oxygen/gaseous hydrogen (GO2/GH2) propellants. The test conditions were designed to produce species concentrations similar to those expected in an Earth-storable propellant combustion environment. Temperatures attained in testing were significantly higher than those expected with Earth-storable propellants, both because of the inherently higher combustion temperature of GO2/GH2 propellants and because the exterior surface of the rocket was not treated with a high-emissivity coating that would be applied to flight class rockets. Thus the test conditions were thought to represent a more severe case than for typical operational applications. The chamber successfully completed testing (over 11 hr accumulated in 44 firings), and post-test inspections showed little degradation of the Ir liner. The results indicate that use of a thick, wrought Ir liner is a viable alternative to the Ir coatings currently used for Ir/Re rockets.

2017 Report for New LANL Physical Vapor Deposition Capability

DOE Office of Scientific and Technical Information (OSTI.GOV)

Roman, Audrey Rae; Zhao, Xinxin; Bond, Evelyn M.

There is an urgent need at LANL to achieve uniform, thin film actinide targets that are essential for nuclear physics experiments. The target preparation work is currently performed externally by Professor Walter Loveland at Oregon State University, who has made various evaporated actinide targets such as Th and U for use on several nuclear physics measurements at LANSCE. We are developing a vapor deposition capability, with the goal of evaporating Th and U in the Actinide Research Facility (ARF) at TA-48. In the future we plan to expand this work to evaporating transuranic elements, such as Pu. The ARF ismore » the optimal location for evaporating actinides because this lab is specifically dedicated to actinide research. There are numerous instruments in the ARF that can be used to provide detailed characterization of the evaporated thin films such as: Table top Scanning Electron Microscope, In-situ X-Ray Diffraction, and 3D Raman spectroscopy. These techniques have the ability to determine the uniformity, surface characterization, and composition of the deposits.« less

Initiated Chemical Vapor Deposition (iCVD) of Highly Cross-Linked Polymer Films for Advanced Lithium-Ion Battery Separators.

PubMed

Yoo, Youngmin; Kim, Byung Gon; Pak, Kwanyong; Han, Sung Jae; Song, Heon-Sik; Choi, Jang Wook; Im, Sung Gap

2015-08-26

We report an initiated chemical vapor deposition (iCVD) process to coat polyethylene (PE) separators in Li-ion batteries with a highly cross-linked, mechanically strong polymer, namely, polyhexavinyldisiloxane (pHVDS). The highly cross-linked but ultrathin pHVDS films can only be obtained by a vapor-phase process, because the pHVDS is insoluble in most solvents and thus infeasible with conventional solution-based methods. Moreover, even after the pHVDS coating, the initial porous structure of the separator is well preserved owing to the conformal vapor-phase deposition. The coating thickness is delicately controlled by deposition time to the level that the pore size decreases to below 7% compared to the original dimension. The pHVDS-coated PE shows substantially improved thermal stability and electrolyte wettability. After incubation at 140 °C for 30 min, the pHVDS-coated PE causes only a 12% areal shrinkage (versus 90% of the pristine separator). The superior wettability results in increased electrolyte uptake and ionic conductivity, leading to significantly improved rate performance. The current approach is applicable to a wide range of porous polymeric separators that suffer from thermal shrinkage and poor electrolyte wetting.

Vapor core propulsion reactors

NASA Technical Reports Server (NTRS)

Diaz, Nils J.

1991-01-01

Many research issues were addressed. For example, it became obvious that uranium tetrafluoride (UF4) is a most preferred fuel over uranium hexafluoride (UF6). UF4 has a very attractive vaporization point (1 atm at 1800 K). Materials compatible with UF4 were looked at, like tungsten, molybdenum, rhenium, carbon. It was found that in the molten state, UF4 and uranium attacked most everything, but in the vapor state they are not that bad. Compatible materials were identified for both the liquid and vapor states. A series of analyses were established to determine how the cavity should be designed. A series of experiments were performed to determine the properties of the fluid, including enhancement of the electrical conductivity of the system. CFD's and experimental programs are available that deal with most of the major issues.

Divertor tungsten tile melting and its effect on core plasma performance

NASA Astrophysics Data System (ADS)

Lipschultz, B.; Coenen, J. W.; Barnard, H. S.; Howard, N. T.; Reinke, M. L.; Whyte, D. G.; Wright, G. M.

2012-12-01

For the 2007 and 2008 run campaigns, Alcator C-Mod operated with a full toroidal row of tungsten tiles in the high heat flux region of the outer divertor; tungsten levels in the core plasma were below measurement limits. An accidental creation of a tungsten leading edge in the 2009 campaign led to this study of a melting tungsten source: H-mode operation with strike point in the region of the melting tile was immediately impossible due to some fraction of tungsten droplets reaching the main plasma. Approximately 15 g of tungsten was lost from the tile over ˜100 discharges. Less than 1% of the evaporated tungsten was found re-deposited on surfaces, the rest is assumed to have become dust. The strong discharge variability of the tungsten reaching the core implies that the melt layer topology is always varying. There is no evidence of healing of the surface with repeated melting. Forces on the melted tungsten tend to lead to prominences that extend further into the plasma. A discussion of the implications of melting a divertor tungsten monoblock on the ITER plasma is presented.

Metalorganic chemical vapor deposition and characterization of ZnO materials

NASA Astrophysics Data System (ADS)

Sun, Shangzu; Tompa, Gary S.; Hoerman, Brent; Look, David C.; Claflin, Bruce B.; Rice, Catherine E.; Masaun, Puneet

2006-04-01

Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and n-type ZnO materials by metalorganic chemical vapor deposition (MOCVD), focusing on recent nitrogen-doped films grown using diethyl zinc as the zinc precursor and nitric oxide (NO) as the dopant. Characterization results, including resistivity, Hall measurements, photoluminescence, and SIMS, are reported and discussed. Electrical behavior was observed to be dependent on illumination, atmosphere, and heat treatment, especially for p-type material.

Study of Polymer Crystallization by Physical Vapor Deposition

NASA Astrophysics Data System (ADS)

Jeong, Hyuncheol

When a polymer is confined under the submicron length scale, confinement size and interfaces can significantly impact the crystallization kinetics and resulting morphology. The ability to tune the morphology of confined polymer systems is of critical importance for the development of high-performance polymer microelectronics. The wisdom from the research on confined crystallization suggests that it would be beneficial to have a processing route in which the crystallization of polymers is driven by interface and temperature effects at a nanometer-scale confinement. In practice, for atomic and small-molecular systems, physical vapor deposition (PVD) has been recognized as the most successful processing route for the precise control of the film structure at surface utilizing confinement effects. While standard PVD technologies are not generally applicable to the deposition of the chemically fragile macromolecules, the development of matrix-assisted pulsed laser evaporation (MAPLE) now enables the non-destructive PVD of high-molecular weight polymers. In this thesis work, we investigated the use of MAPLE for the precise control of the crystallization of polymer films at a molecular level. We also sought to decipher the rules governing the crystallization of confined polymers, by using MAPLE as a tool to form confined polymer systems onto substrates with a controlled temperature. We first explored the early stages of film growth and crystallization of poly(ethylene oxide) (PEO) at the substrate surface formed by MAPLE. The unique mechanism of film formation in MAPLE, the deposition of submicron-sized polymer droplets, allowed for the manifestation of confinement and substrate effects in the crystallization of MAPLE-deposited PEO. Furthermore, we also focused on the property of the amorphous PEO film formed by MAPLE, showing the dependence of polymer crystallization kinetics on the thermal history of the amorphous phase. Lastly, we probed how MAPLE processing affected

Ruthenium films by digital chemical vapor deposition: Selectivity, nanostructure, and work function

NASA Astrophysics Data System (ADS)

Dey, Sandwip K.; Goswami, Jaydeb; Gu, Diefeng; de Waard, Henk; Marcus, Steve; Werkhoven, Chris

2004-03-01

Ruthenium electrodes were selectively deposited on photoresist-patterned HfO2 surface [deposited on a SiOx/Si wafer by atomic layer deposition (ALD)] by a manufacturable, digital chemical vapor deposition (DCVD) technique. DCVD of Ru was carried out at 280-320 °C using an alternate delivery of Bis (2,2,6,6-tetramethyl-3,5-heptanedionato)(1,5-cyclooctadiene)Ru (dissolved in tetrahydrofuran) and oxygen. The as-deposited Ru films were polycrystalline, dense, and conducting (resistivity ˜20.6 μΩ cm). However, Rutherford backscattering spectroscopy, x-ray photoelectron spectroscopy, and high-resolution electron microscopy results indicate the presence of an amorphous RuOx at the Ru grain boundaries and at the DCVD-Ru/ALD-HfO2 interface. The estimated work function of DCVD-Ru on ALD-HfO2 was ˜5.1 eV. Moreover, the equivalent oxide thickness, hysteresis in capacitance-voltage, and leakage current density at -2 V of the HfO2/SiOx dielectric, after forming gas (95% N2+5% H2) annealing at 450 °C for 30 min, were 1.4 nm, 20 mV, and 7.4×10-7 A cm-2, respectively.

Diamond deposition by chemical vapor transport with hydrogen in a closed system

NASA Astrophysics Data System (ADS)

Piekarczyk, W.; Messier, R.; Roy, R.; Engdahl, C.

1990-11-01

The carbon-hydrogen chemical vapor transport system was examined in accordance with a four-stage transport model. A result of this examination is that graphite co-deposition could be avoided when diamond is deposited from gas solutions undersaturated with regard to diamond. Actual deposition experiments showed that this unusual requirement can be fulfilled but only for the condition that the transport distance between the carbon source and the substrate surface is short. In such a case diamond can be deposited equally from supersaturated as well as from undersaturated gas solutions. On the basis of thermodynamic considerations, a possible explanation of this unusual phenomenon is given. It is shown that there is a possibility of deposition of diamond from both supersaturated and undersaturated gas solutions but only on the condition that they are in a non-equilibrium state generally called the activated state. A model of the diamond deposition process consisting of two steps is proposed. In the first step diamond and graphite are deposited simultaneously. The most important carbon deposition reaction is C 2H 2(g)+2H(g) = C(diamond+graphite) +CH 4(g). The amount of co-deposited graphite is not a direct function of the saturation state of the gas phase. In the second step graphite is etched according to the most probable reaction C(graphite)+4H(g) = CH 4(g). Atomic hydrogen in a concentration exceeding equilibrium is necessary not only to etch graphite, but also to precipitate diamond and graphite.

Stress hysteresis during thermal cycling of plasma-enhanced chemical vapor deposited silicon oxide films

NASA Astrophysics Data System (ADS)

Thurn, Jeremy; Cook, Robert F.

2002-02-01

The mechanical response of plasma-enhanced chemical vapor deposited SiO2 to thermal cycling is examined by substrate curvature measurement and depth-sensing indentation. Film properties of deposition stress and stress hysteresis that accompanied thermal cycling are elucidated, as well as modulus, hardness, and coefficient of thermal expansion. Thermal cycling is shown to result in major plastic deformation of the film and a switch from a compressive to a tensile state of stress; both athermal and thermal components of the net stress alter in different ways during cycling. A mechanism of hydrogen incorporation and release from as-deposited silanol groups is proposed that accounts for the change in film properties and state of stress.

Metal-organic chemical vapor deposition of aluminum oxide thin films via pyrolysis of dimethylaluminum isopropoxide

DOE Office of Scientific and Technical Information (OSTI.GOV)

Schmidt, Benjamin W.; Sweet, William J. III; Rogers, Bridget R.

2010-03-15

Metal-organic chemical vapor deposited aluminum oxide films were produced via pyrolysis of dimethylaluminum isopropoxide in a high vacuum reaction chamber in the 417-659 deg. C temperature range. Deposited films contained aluminum, oxygen, and carbon, and the carbon-to-aluminum ratio increased with increased deposition temperature. Aluminum-carbon bonding was observed in films deposited at 659 deg. C by x-ray photoelectron spectroscopy, but not in films deposited at 417 deg. C. The apparent activation energy in the surface reaction controlled regime was 91 kJ/mol. The O/Al and C/Al ratios in the deposited films were greater and less than, respectively, the ratios predicted by themore » stoichiometry of the precursor. Flux analysis of the deposition process suggested that the observed film stoichiometries could be explained by the participation of oxygen-containing background gases present in the reactor at its base pressure.« less

Formation of β-FeSi 2 thin films by partially ionized vapor deposition

NASA Astrophysics Data System (ADS)

Harada, Noriyuki; Takai, Hiroshi

2003-05-01

The partially ionized vapor deposition (PIVD) is proposed as a new method to realize low temperature formation of β-FeSi 2 thin films. In this method, Fe is evaporated by E-gun and a few percents of Fe atoms are ionized. We have investigated influences of the ion content and the accelerating voltage of Fe ions on the structural properties of β-FeSi 2 films deposited on Si substrates. It was confirmed that β-FeSi 2 can be formed on Si(1 0 0) substrate by PIVD even at substrate temperature as low as 350, while FeSi by the conventional vacuum deposition. It was concluded that the influence of Fe ions on preferential orientation of β-FeSi 2 depends strongly on the content and the acceleration energy of ions.

Physical vapor deposition of one-dimensional nanoparticle arrays on graphite: seeding the electrodeposition of gold nanowires.

PubMed

Cross, C E; Hemminger, J C; Penner, R M

2007-09-25

One-dimensional (1D) ensembles of 2-15 nm diameter gold nanoparticles were prepared using physical vapor deposition (PVD) on highly oriented pyrolytic graphite (HOPG) basal plane surfaces. These 1D Au nanoparticle ensembles (NPEs) were prepared by depositing gold (0.2-0.6 nm/s) at an equivalent thickness of 3-4 nm onto HOPG surfaces at 670-690 K. Under these conditions, vapor-deposited gold nucleated selectively at the linear step edge defects present on these HOPG surfaces with virtually no nucleation of gold particles on terraces. The number density of 2-15 nm diameter gold particles at step edges was 30-40 microm-1. These 1D NPEs were up to a millimeter in length and organized into parallel arrays on the HOPG surface, following the organization of step edges. Surprisingly, the deposition of more gold by PVD did not lead to the formation of continuous gold nanowires at step edges under the range of sample temperature or deposition flux we have investigated. Instead, these 1D Au NPEs were used as nucleation templates for the preparation by electrodeposition of gold nanowires. The electrodeposition of gold occurred selectively on PVD gold nanoparticles over the potential range from 700-640 mV vs SCE, and after optimization of the electrodeposition parameters continuous gold nanowires as small as 80-90 nm in diameter and several micrometers in length were obtained.

Modeling of InP metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

1991-01-01

The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

Selective growth of titanium dioxide by low-temperature chemical vapor deposition.

PubMed

Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

2015-05-13

A key factor in engineering integrated optical devices such as electro-optic switches or waveguides is the patterning of thin films into specific geometries. In particular for functional oxides, etching processes are usually developed to a much lower extent than for silicon or silicon dioxide; therefore, selective area deposition techniques are of high interest for these materials. We report the selective area deposition of titanium dioxide using titanium isopropoxide and water in a high-vacuum chemical vapor deposition (HV-CVD) process at a substrate temperature of 225 °C. Here—contrary to conventional thermal CVD processes—only hydrolysis of the precursor on the surface drives the film growth as the thermal energy is not sufficient to thermally decompose the precursor. Local modification of the substrate surface energy by perfluoroalkylsilanization leads to a reduced surface residence time of the precursors and, consequently, to lower reaction rate and a prolonged incubation period before nucleation occurs, hence, enabling selective area growth. We discuss the dependence of the incubation time and the selectivity of the deposition process on the presence of the perfluoroalkylsilanization layer and on the precursor impinging rates—with selectivity, we refer to the difference of desired material deposition, before nucleation occurs in the undesired regions. The highest measured selectivity reached (99 ± 5) nm, a factor of 3 superior than previously reported in an atomic layer deposition process using the same chemistry. Furthermore, resolution of the obtained patterns will be discussed and illustrated.

Vapor-deposited water and nitric acid ices

NASA Astrophysics Data System (ADS)

Leu, Ming-Taun; Keyser, Leon F.

Ices formed by vapor deposition have been the subject of numerous laboratory investigations in connection with snow and glaciers on the ground, ice clouds in the terrestrial atmosphere, surfaces of other planets and their satellites, and the interstellar medium. In this review we will focus on these specific subjects: (1) heterogeneous chemistry on the surfaces of polar stratospheric clouds (PSCs) and (2) surfaces of satellites of the outer planets in our solar system. Stratospheric ozone provides a protective shield for mankind and the global biosphere from harmful ultraviolet solar radiation. In past decades, theoretical atmospheric models for the calculation of ozone balance frequently used only homogeneous gas-phase reactions in their studies. Since the discovery of the Antarctic ozone hole in 1985, however, it has been demonstrated that knowledge of heterogeneous reactions on the surface of PSCs is definitely needed to understand this significant natural event due to the anthropogenic emission of chlorofluorocarbons (CFCs). We will briefly discuss the experimental techniques for the investigation of heterogeneous chemistry on ice surfaces carried out in our laboratories. The experimental apparatus used include: several flow-tube reactors, an electron-impact ionization mass spectrometer, a Fourier transform infrared spectrometer, a BET adsorption apparatus, and a scanning environmental electron microscope. The adsorption experiments and electron microscopic work have demonstrated that the vapor-deposited ices are highly porous. Therefore, it is necessary to develop theoretical models for the elucidation of the uptake and reactivity of trace gases in porous ice substrates. Several measurements of uptake and reaction probabilities of these trace gases on water ices and nitric acid ices have been performed under ambient conditions in the upper troposphere and lower stratosphere, mainly in the temperature range 180-220 K. The trace gases of atmospheric importance

Creep of chemically vapor deposited SiC fibers

NASA Technical Reports Server (NTRS)

Dicarlo, J. A.

1984-01-01

The creep, thermal expansion, and elastic modulus properties for chemically vapor deposited SiC fibers were measured between 1000 and 1500 C. Creep strain was observed to increase logarithmically with time, monotonically with temperature, and linearly with tensile stress up to 600 MPa. The controlling activation energy was 480 + or - 20 kJ/mole. Thermal pretreatments near 1200 and 1450 C were found to significantly reduce fiber creep. These results coupled with creep recovery observations indicate that below 1400 C fiber creep is anelastic with neglible plastic component. This allowed a simple predictive method to be developed for describing fiber total deformation as a function of time, temperature, and stress. Mechanistic analysis of the property data suggests that fiber creep is the result of beta-SiC grain boundary sliding controlled by a small percent of free silicon in the grain boundaries.

Effects of argon addition on a-CNx film deposition by hot carbon filament chemical vapor deposition

NASA Astrophysics Data System (ADS)

Watanabe, Yoshihisa; Aono, Masami; Yamazaki, Ayumi; Kitazawa, Nobuaki; Nakamura, Yoshikazu

2002-07-01

Using a carbon filament which supplies carbon and heat, amorphous carbon nitride (a-CNx) films were prepared on Si (100) substrates by hot filament chemical vapor deposition. Deposition was performed in a low-pressure atmosphere of pure nitrogen and a gas mixture of nitrogen and argon. Effects of argon additions to the nitrogen atmosphere on the film microstructure and interface composition between the film and substrate were studied by field-emission scanning electron microscopy (FESEM) and x-ray photoelectron spectroscopy (XPS). FESEM observations reveal that the film prepared in a pure nitrogen atmosphere has uniform nucleation and a densely packed columnar pieces structure. The film prepared in the nitrogen and argon gas mixture exhibits preferential nucleation and a tapered structure with macroscopic voids. Depth analyses using XPS reveal that the film prepared in pure nitrogen possesses a broad interface, which includes silicon carbide as well as a-CNx, whereas a sharp interface is discerned in the film prepared in the mixed nitrogen and argon gas. We observed that silicon carbide formation is suppressed by an argon addition to the nitrogen atmosphere during deposition. copyright 2002 American Vacuum Society.

Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma

DOE Office of Scientific and Technical Information (OSTI.GOV)

Okada, H.; Kato, M.; Ishimaru, T.

2014-02-20

Organometallic chemical vapor deposition of silicon nitride films enhanced by atomic nitrogen generated from surface-wave plasma is investigated. Feasibility of precursors of triethylsilane (TES) and bis(dimethylamino)dimethylsilane (BDMADMS) is discussed based on a calculation of bond energies by computer simulation. Refractive indices of 1.81 and 1.71 are obtained for deposited films with TES and BDMADMS, respectively. X-ray photoelectron spectroscopy (XPS) analysis of the deposited film revealed that TES-based film coincides with the stoichiometric thermal silicon nitride.

Deposition of vaporized species onto glassy fallout from a near-surface nuclear test

DOE Office of Scientific and Technical Information (OSTI.GOV)

Weisz, David G.; Jacobsen, Benjamin; Marks, Naomi E.

In a near-surface nuclear explosion where the resultant fireball can interact with the surface, vaporized materials from the nuclear device can be incorporated into molten soil and other carrier materials from that surface. This mixed material becomes a source of glassy fallout upon quenching and is locally deposited. Fallout formation models have been proposed; however, the specific mechanisms and physical conditions by which soil and other carrier materials interact in the fireball, as well as the subsequent incorporation of device materials with carrier materials, are not well constrained. We observe a surface deposition layer preserved at interfaces where two aerodynamicmore » fallout glasses agglomerated and fused, and characterized 11 such boundaries using spatial analyses to better understand the vaporization and condensation behavior of species in the fireball. Using nanoscale secondary ion mass spectrometry (NanoSIMS), we identify higher enrichments of uranium from the device ( 235U/ 238U ratio >7.5) in 8 of the interface layers. Major element analysis of the interfaces reveals the deposition layer to be enriched in Fe, Ca, Mg, Mn, and Na-bearing species and depleted in Ti and Al-bearing species. Most notably, the Fe and Ca-bearing species are enriched approximately 50% at the interface layer relative to the average concentrations measured within the fallout glasses, while Ti and Al-bearing species are depleted by approximately 20%. SiO 2 is found to be relatively invariable across the samples and interfaces (~3% standard deviation). The notable depletion of Al, a refractory oxide abundant in the soil, together with the enrichment of 235U and Fe, suggests an anthropogenic source of the enriched species or an unexpected vaporization/condensation behavior. The presence of both refractory (e.g., Ca and U) and volatile (e.g., Na) species approximately co-located in most of the observed layers (within 1.5 μm) suggests a continuous condensation process may

Deposition of vaporized species onto glassy fallout from a near-surface nuclear test

NASA Astrophysics Data System (ADS)

Weisz, David G.; Jacobsen, Benjamin; Marks, Naomi E.; Knight, Kim B.; Isselhardt, Brett H.; Matzel, Jennifer E.; Weber, Peter K.; Prussin, Stan G.; Hutcheon, Ian D.

2017-03-01

In a near-surface nuclear explosion where the resultant fireball can interact with the surface, vaporized materials from the nuclear device can be incorporated into molten soil and other carrier materials from that surface. This mixed material becomes a source of glassy fallout upon quenching and is locally deposited. Fallout formation models have been proposed; however, the specific mechanisms and physical conditions by which soil and other carrier materials interact in the fireball, as well as the subsequent incorporation of device materials with carrier materials, are not well constrained. We observe a surface deposition layer preserved at interfaces where two aerodynamic fallout glasses agglomerated and fused, and characterized 11 such boundaries using spatial analyses to better understand the vaporization and condensation behavior of species in the fireball. Using nanoscale secondary ion mass spectrometry (NanoSIMS), we identify higher enrichments of uranium from the device (235U/238U ratio >7.5) in 8 of the interface layers. Major element analysis of the interfaces reveals the deposition layer to be enriched in Fe, Ca, Mg, Mn, and Na-bearing species and depleted in Ti and Al-bearing species. Most notably, the Fe and Ca-bearing species are enriched approximately 50% at the interface layer relative to the average concentrations measured within the fallout glasses, while Ti and Al-bearing species are depleted by approximately 20%. SiO2 is found to be relatively invariable across the samples and interfaces (∼3% standard deviation). The notable depletion of Al, a refractory oxide abundant in the soil, together with the enrichment of 235U and Fe, suggests an anthropogenic source of the enriched species or an unexpected vaporization/condensation behavior. The presence of both refractory (e.g., Ca and U) and volatile (e.g., Na) species approximately co-located in most of the observed layers (within 1.5 μm) suggests a continuous condensation process may also be

Deposition of vaporized species onto glassy fallout from a near-surface nuclear test

DOE PAGES

Weisz, David G.; Jacobsen, Benjamin; Marks, Naomi E.; ...

2016-10-29

In a near-surface nuclear explosion where the resultant fireball can interact with the surface, vaporized materials from the nuclear device can be incorporated into molten soil and other carrier materials from that surface. This mixed material becomes a source of glassy fallout upon quenching and is locally deposited. Fallout formation models have been proposed; however, the specific mechanisms and physical conditions by which soil and other carrier materials interact in the fireball, as well as the subsequent incorporation of device materials with carrier materials, are not well constrained. We observe a surface deposition layer preserved at interfaces where two aerodynamicmore » fallout glasses agglomerated and fused, and characterized 11 such boundaries using spatial analyses to better understand the vaporization and condensation behavior of species in the fireball. Using nanoscale secondary ion mass spectrometry (NanoSIMS), we identify higher enrichments of uranium from the device ( 235U/ 238U ratio >7.5) in 8 of the interface layers. Major element analysis of the interfaces reveals the deposition layer to be enriched in Fe, Ca, Mg, Mn, and Na-bearing species and depleted in Ti and Al-bearing species. Most notably, the Fe and Ca-bearing species are enriched approximately 50% at the interface layer relative to the average concentrations measured within the fallout glasses, while Ti and Al-bearing species are depleted by approximately 20%. SiO 2 is found to be relatively invariable across the samples and interfaces (~3% standard deviation). The notable depletion of Al, a refractory oxide abundant in the soil, together with the enrichment of 235U and Fe, suggests an anthropogenic source of the enriched species or an unexpected vaporization/condensation behavior. The presence of both refractory (e.g., Ca and U) and volatile (e.g., Na) species approximately co-located in most of the observed layers (within 1.5 μm) suggests a continuous condensation process may

Raman water vapor lidar calibration

NASA Astrophysics Data System (ADS)

Landulfo, E.; Da Costa, R. F.; Torres, A. S.; Lopes, F. J. S.; Whiteman, D. N.; Venable, D. D.

2009-09-01

We show here new results of a Raman LIDAR calibration methodology effort putting emphasis in the assessment of the cross-section ratio between water vapor and nitrogen by the use of a calibrated NIST traceable tungsten lamp. Therein we give a step by step procedure of how to employ such equipment by means of a mapping/scanning procedure over the receiving optics of a water vapor Raman LIDAR. This methodology has been independently used at Howard University Raman LIDAR and at IPEN Raman LIDAR what strongly supports its reproducibility and points towards an independently calibration methodology to be carried on within an experiment routine.

One-step microwave plasma enhanced chemical vapor deposition (MW-PECVD) for transparent superhydrophobic surface

NASA Astrophysics Data System (ADS)

Thongrom, Sukrit; Tirawanichakul, Yutthana; Munsit, Nantakan; Deangngam, Chalongrat

2018-02-01

We demonstrate a rapid and environmental friendly fabrication technique to produce optically clear superhydrophobic surfaces using poly (dimethylsiloxane) (PDMS) as a sole coating material. The inert PDMS chain is transformed into a 3-D irregular solid network through microwave plasma enhanced chemical vapor deposition (MW-PECVD) process. Thanks to high electron density in the microwave-activated plasma, coating can be done in just a single step with rapid deposition rate, typically much shorter than 10 s. Deposited layers show excellent superhydrophobic properties with water contact angles of ∼170° and roll-off angles as small as ∼3°. The plasma-deposited films can be ultrathin with thicknesses under 400 nm, greatly diminishing the optical loss. Moreover, with appropriate coating conditions, the coating layer can even enhance the transmission over the entire visible spectrum due to a partial anti-reflection effect.

Influence of Substrate Temperature on the Transformation Front Velocities That Determine Thermal Stability of Vapor-Deposited Glasses

DOE PAGES

Dalal, Shakeel S.; Ediger, M. D.

2015-02-09

Stable organic glasses prepared by physical vapor deposition transform into the supercooled liquid via propagating fronts of molecular mobility, a mechanism different from that exhibited by glasses prepared by cooling the liquid. In this paper, we show that spectroscopic ellipsometry can directly observe this front-based mechanism in real time and explore how the velocity of the front depends upon the substrate temperature during deposition. For the model glass former indomethacin, we detect surface-initiated mobility fronts in glasses formed at substrate temperatures between 0.68T g and 0.94T g. At each of two annealing temperatures, the substrate temperature during deposition can changemore » the transformation front velocity by a factor of 6, and these changes are imperfectly correlated with the density of the glass. We also observe substrate-initiated fronts at some substrate temperatures. By connecting with theoretical work, we are able to infer the relative mobilities of stable glasses prepared at different substrate temperatures. Finally, an understanding of the transformation behavior of vapor-deposited glasses may be relevant for extending the lifetime of organic semiconducting devices.« less

Diamond synthesis at atmospheric pressure by microwave capillary plasma chemical vapor deposition

DOE PAGES

Gou, Huiyang; Hemley, Russell J.; Hemawan, Kadek W.

2015-11-02

Polycrystalline diamond has been successfully synthesized on silicon substrates at atmospheric pressure using a microwave capillary plasma chemical vapor deposition technique. The CH 4/Ar plasma was generated inside of quartz capillary tubes using 2.45 GHz microwave excitation without adding H2 into the deposition gas chemistry. Electronically excited species of CN, C 2, Ar, N 2, CH, H β and H α were observed in emission spectra. Raman measurements of deposited material indicate the formation of well-crystallized diamond, as evidenced by the sharp T 2g phonon at 1333 cm -1 peak relative to the Raman features of graphitic carbon. Furthermore, fieldmore » emission scanning electron microscopy (SEM) images reveal that, depending on the on growth conditions, the carbon microstructures of grown films exhibit “coral” and “cauliflower-like” morphologies or well-facetted diamond crystals with grain sizes ranging from 100 nm to 10 μm.« less

PHYSICAL VAPOR DEPOSITION OF TANTALUM ON GUN BARREL STEEL (SYSTEMS ANLAYSIS BRANCH, SUSTAINABLE TECHNOLOGY DIVISION, NRMRL)

EPA Science Inventory

This project entails the development of an alternative technology for plating gun barrel steel to replace the process electroplating of chrome (Cr-electroplate) with physical vapor deposition of tantalum (Ta-PVD). Developed by Benet Laboratory at Watervliet Arsenal, this project'...

Pressure Measurements for Tungsten Wire Explosions in Water

NASA Astrophysics Data System (ADS)

Afanas'ev, V. N.

2005-07-01

Successful wire array implosion experiments carried out on PBFA- Z accelerator [1], in which a record-breaking soft x-ray yield of more than 1.5 MJ was observed, stimulated interest in research of electric explosion of thin metal wires. The results of pressure measurements micron's tungsten wire explosion, which carried out in deionized water. Thin tungsten wire explosion was investigated experimentally at current pulse 100 ns duration. The shock waves from the 70 μm tungsten wire explosion were measured by the piezoceramic pressure gauge. The gauges were placed at a range from 3 to 15 mm of wire. The piezoceramic gauges were calibrated on the stable electron beams generator with nanoseconds duration. Experiments were carried out for verifying the tungsten plasma equation of state parameters under different values of the deposited energy. [1] R. B. Spielman, C. Deeney, G. A. Chandler et al., Phys.Plasmas #5, ð. 2105, 1998. The work was supported by ISTC # 1826

Effect of Helmholtz Oscillation on Auto-shroud for APS Tungsten Carbide Coating

NASA Astrophysics Data System (ADS)

Jin, Younggil; Choi, Sooseok; Yang, Seung Jae; Park, Chong Rae; Kim, Gon-Ho

2013-06-01

The atmospheric-pressure plasma spray (APS) of tungsten coating was performed using tungsten carbide (WC) powder by means of DC plasma torch equipped with a stepped anode nozzle as a potential method of W coating on graphite plasma-facing component of fusion reactors. This nozzle configuration allows Helmholtz oscillation mode dominating in APS arc fluctuation, and the variation of auto-shroud effect with Helmholtz oscillation characteristics can be investigated. Tungsten coating made from WC powder has lower porosity and higher tungsten purity than that made from pure tungsten powder. The porosity and chemical composition of coatings were investigated by mercury intrusion porosimetry and x-ray photoelectron spectroscopy, respectively. The purity of tungsten coating layer is increased with the increasing frequency of Helmholtz oscillation and the increasing arc current. The modulation of Helmholtz oscillation frequency and magnitude may enhance the decarburization of WC to deposit tungsten coating without W-C and W-O bond from WC powder.

Thermal emission from large area chemical vapor deposited graphene devices

NASA Astrophysics Data System (ADS)

Luxmoore, I. J.; Adlem, C.; Poole, T.; Lawton, L. M.; Mahlmeister, N. H.; Nash, G. R.

2013-09-01

The spatial variation of thermal emission from large area graphene grown by chemical vapor deposition, transferred onto SiO2/Si substrates and fabricated into field effect transistor structures, has been investigated using infra-red microscopy. A peak in thermal emission occurs, the position of which can be altered by reversal of the current direction. The experimental results are compared with a one dimensional finite element model, which accounts for Joule heating and electrostatic effects, and it is found that the thermal emission is governed by the charge distribution in the graphene and maximum Joule heating occurs at the point of minimum charge density.

CuInS2 Films Deposited by Aerosol-Assisted Chemical Vapor Deposition Using Ternary Single-Source Precursors

NASA Technical Reports Server (NTRS)

Jin, Michael; Banger, Kal; Harris, Jerry; Hepp, Aloysius

2003-01-01

Polycrystalline CuInS2 films were deposited by aerosol-assisted chemical vapor deposition using both solid and liquid ternary single-source precursors (SSPs) which were prepared in-house. Films with either (112) or (204/220) preferred orientation, had a chalcopyrite structure, and (112)-oriented films contained more copper than (204/220)-oriented films. The preferred orientation of the film is likely related to the decomposition and reaction kinetics associated with the molecular structure of the precursors at the substrate. Interestingly, the (204/220)-oriented films were always In-rich and were accompanied by a secondary phase. From the results of post-growth annealing, etching experiments, and Raman spectroscopic data, the secondary phase was identified as an In-rich compound. On the contrary, (112)-oriented films were always obtained with a minimal amount of the secondary phase, and had a maximum grain size of about 0.5 micron. Electrical and optical properties of all the films grown were characterized. They all showed p-type conduction with an electrical resistivity between 0.1 and 30 Omega-cm, and an optical band gap of approximately 1.46 eV +/- 0.02, as deposited. The material properties of deposited films revealed this methodology of using SSPs for fabricating chalcopyrite-based solar cells to be highly promising.

Magmatic-vapor expansion and the formation of high-sulfidation gold deposits: Structural controls on hydrothermal alteration and ore mineralization

USGS Publications Warehouse

Berger, Byron R.; Henley, Richard W.

2011-01-01

High-sulfidation copper–gold lode deposits such as Chinkuashih, Taiwan, Lepanto, Philippines, and Goldfield, Nevada, formed within 1500 m of the paleosurface in volcanic terranes. All underwent an early stage of extensive advanced argillic silica–alunite alteration followed by an abrupt change to spatially much more restricted stages of fracture-controlled sulfide–sulfosalt mineral assemblages and gold–silver mineralization. The alteration as well as ore mineralization stages of these deposits were controlled by the dynamics and history of syn-hydrothermal faulting.At the Sulfate Stage, aggressive advanced argillic alteration and silicification were consequent on the in situ formation of acidic condensate from magmatic vapor as it expanded through secondary fracture networks alongside active faults. The reduction of permeability at this stage due to alteration decreased fluid flow to the surface, and progressively developed a barrier between magmatic-vapor expansion constrained by the active faults and peripheral hydrothermal activity dominated by hot-water flow. In conjunction with the increased rock strength resulting from alteration, subsequent fault-slip inversion in response to an increase in compressional stress generated new, highly permeable fractures localized by the embrittled, altered rock. The new fractures focused magmatic-vapor expansion with much lower heat loss so that condensation occurred. Sulfide Stage sulfosalt, sulfide, and gold–silver deposition then resulted from destabilization of vapor phase metal species due to vapor decompression through the new fracture array. The switch from sulfate to sulfide assemblages is, therefore, a logical consequence of changes in structural permeability due to the coupling of alteration and fracture dynamics rather than to changes in the chemistry of the fluid phase at its magmatic source.

Noncatalytic thermocouple coatings produced with chemical vapor deposition for flame temperature measurements.

PubMed

Bahlawane, N; Struckmeier, U; Kasper, T S; Osswald, P

2007-01-01

Chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD) have been employed to develop alumina thin films in order to protect thermocouples from catalytic overheating in flames and to minimize the intrusion presented to the combustion process. Alumina films obtained with a CVD process using AlCl(3) as the precursor are dense, not contaminated, and crystallize in the corundum structure, while MOCVD using Al(acetyl acetone)(3) allows the growth of corundum alumina with improved growth rates. These films, however, present a porous columnar structure and show some carbon contamination. Therefore, coated thermocouples using AlCl(3)-CVD were judged more suitable for flame temperature measurements and were tested in different fuels over a typical range of stoichiometries. Coated thermocouples exhibit satisfactory measurement reproducibility, no temporal drifts, and do not suffer from catalytic effects. Furthermore, their increased radiative heat loss (observed by infrared spectroscopy) allows temperature measurements over a wider range when compared to uncoated thermocouples. A flame with a well-known temperature profile established with laser-based techniques was used to determine the radiative heat loss correction to account for the difference between the apparent temperature measured by the coated thermocouple and the true flame temperature. The validity of the correction term was confirmed with temperature profile measurements for several flames previously studied in different laboratories with laser-based techniques.

Photoluminescence of silicon nanowires obtained by epitaxial chemical vapor deposition

NASA Astrophysics Data System (ADS)

Demichel, O.; Oehler, F.; Calvo, V.; Noé, P.; Pauc, N.; Gentile, P.; Ferret, P.; Baron, T.; Magnea, N.

2009-05-01

We have carried out photoluminescence measurements of silicon nanowires (SiNWs) obtained by the chemical vapor deposition method with a copper-catalyzed vapor-liquid-solid mechanism. The nanowires have a typical diameter of 200 nm. Spectrum of the as-grown SiNWs exhibits radiative states below the energy bandgap and a small contribution near the silicon gap energy at 1.08 eV. A thermal oxidation allows to decrease the intensity at low energy and to enhance the intensity of the 1.08 eV contribution. The behavior of this contribution as a function of the pump power is correlated to a free carrier recombination. Furthermore, the spatial confinement of the carriers in SiNWs could explain the difference of shape and recombination energy of this contribution compared to the recombination of free exciton in the bulk silicon. The electronic system seems to be in an electron-hole plasma (ehp), as it has already been shown in SOI structures [M. Tajima, et al., J. Appl. Phys. 84 (1998) 2224]. A simulation of the radiative emission of an ehp is performed and results are discussed.

Method and apparatus for fabricating a thin-film solar cell utilizing a hot wire chemical vapor deposition technique

DOEpatents

Wang, Qi; Iwaniczko, Eugene

2006-10-17

A thin-film solar cell is provided. The thin-film solar cell comprises an a-SiGe:H (1.6 eV) n-i-p solar cell having a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer by hot wire chemical vapor deposition. A method for fabricating a thin film solar cell is also provided. The method comprises depositing a n-i-p layer at a deposition rate of at least ten (10) .ANG./second for the a-SiGe:H intrinsic layer.

Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction

DOE PAGES

Martin, Aiden A.; Depond, Philip J.; Bagge-Hansen, Michael; ...

2018-03-14

An operando x-ray diffraction system is presented for elucidating optimal laser assisted chemical vapor deposition growth conditions. The technique is utilized to investigate deposition dynamics of boron-carbon materials using trimethyl borate precursor. Trimethyl borate exhibits vastly reduced toxicological and flammability hazards compared to existing precursors, but has previously not been applied to boron carbide growth. Crystalline boron-rich carbide material is produced in a narrow growth regime on addition of hydrogen during the growth phase at high temperature. Finally, the use of the operando x-ray diffraction system allows for the exploration of highly nonequilibrium conditions and rapid process control, which aremore » not possible using ex situ diagnostics.« less

Rapid feedback of chemical vapor deposition growth mechanisms by operando X-ray diffraction

DOE Office of Scientific and Technical Information (OSTI.GOV)

Martin, Aiden A.; Depond, Philip J.; Bagge-Hansen, Michael

An operando x-ray diffraction system is presented for elucidating optimal laser assisted chemical vapor deposition growth conditions. The technique is utilized to investigate deposition dynamics of boron-carbon materials using trimethyl borate precursor. Trimethyl borate exhibits vastly reduced toxicological and flammability hazards compared to existing precursors, but has previously not been applied to boron carbide growth. Crystalline boron-rich carbide material is produced in a narrow growth regime on addition of hydrogen during the growth phase at high temperature. Finally, the use of the operando x-ray diffraction system allows for the exploration of highly nonequilibrium conditions and rapid process control, which aremore » not possible using ex situ diagnostics.« less

Process development for the manufacture of an integrated dispenser cathode assembly using laser chemical vapor deposition

NASA Astrophysics Data System (ADS)

Johnson, Ryan William

2005-07-01

Laser Chemical Vapor Deposition (LCVD) has been shown to have great potential for the manufacture of small, complex, two or three dimensional metal and ceramic parts. One of the most promising applications of the technology is in the fabrication of an integrated dispenser cathode assembly. This application requires the deposition of a boron nitride-molybdenum composite structure. In order to realize this structure, work was done to improve the control and understanding of the LCVD process and to determine experimental conditions conducive to the growth of the required materials. A series of carbon fiber and line deposition studies were used to characterize process-shape relationships and study the kinetics of carbon LCVD. These studies provided a foundation for the fabrication of the first high aspect ratio multi-layered LCVD wall structures. The kinetics studies enabled the formulation of an advanced computational model in the FLUENT CFD package for studying energy transport, mass and momentum transport, and species transport within a forced flow LCVD environment. The model was applied to two different material systems and used to quantify deposition rates and identify rate-limiting regimes. A computational thermal-structural model was also developed using the ANSYS software package to study the thermal stress state within an LCVD deposit during growth. Georgia Tech's LCVD system was modified and used to characterize both boron nitride and molybdenum deposition independently. The focus was on understanding the relations among process parameters and deposit shape. Boron nitride was deposited using a B3 N3H6-N2 mixture and growth was characterized by sporadic nucleation followed by rapid bulk growth. Molybdenum was deposited from the MoCl5-H2 system and showed slow, but stable growth. Each material was used to grow both fibers and lines. The fabrication of a boron nitride-molybdenum composite was also demonstrated. In sum, this work served to both advance the

Methylsilane derived silicon carbide particle coatings produced by fluid-bed chemical vapor deposition

NASA Astrophysics Data System (ADS)

Miller, James Henry

This report describes the research effort that was undertaken to develop and understand processing techniques for the deposition of both low and high density SiC coatings from a non-halide precursor, in support of the Generation IV Gas-Cooled Fast Reactor (GFR) fuel development program. The research was conducted in two phases. In the first phase, the feasibility of producing both porous SiC coatings and dense SiC coatings on surrogate fuel particles by fluidized bed chemical vapor deposition (FBCVD) using gas mixtures of methylsilane and argon was demonstrated. In the second phase, a combined experimental and modeling effort was carried out in order to gain an understanding of the deposition mechanisms that result in either porous or dense SiC coatings, depending on the coating conditions. For this second phase effort, a simplified (compared to the fluid bed) single-substrate chemical vapor deposition (CVD) system was employed. Based on the experimental and modeling results, the deposition of SiC from methylsilane is controlled by the extent of gas-phase reaction, and is therefore highly sensitive to temperature. The results show that all SiC coatings are due to the surface adsorption of species that result from gas-phase reactions. The model terms these gas-borne species embryos, and while the model does not include a prediction of coating morphology, a comparison of the model and experimental results indicates that the morphology of the coatings is controlled by the nucleation and growth of the embryos. The coating that results from small embryos (embryos with only two Si-C pairs) appears relatively dense and continuous, while the coating that results from larger embryos becomes less continuous and more nodular as embryo size increases. At some point in the growth of embryos they cease to behave as molecular species and instead behave as particles that grow by either agglomeration or by incorporation of molecular species on their surface. As these particles

Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

NASA Astrophysics Data System (ADS)

Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

2016-04-01

In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

Femtosecond to nanosecond excited state dynamics of vapor deposited copper phthalocyanine thin films.

PubMed

Caplins, Benjamin W; Mullenbach, Tyler K; Holmes, Russell J; Blank, David A

2016-04-28

Vapor deposited thin films of copper phthalocyanine (CuPc) were investigated using transient absorption spectroscopy. Exciton-exciton annihilation dominated the kinetics at high exciton densities. When annihilation was minimized, the observed lifetime was measured to be 8.6 ± 0.6 ns, which is over an order of magnitude longer than previous reports. In comparison with metal free phthalocyanine (H2Pc), the data show evidence that the presence of copper induces an ultrafast relaxation process taking place on the ca. 500 fs timescale. By comparison to recent time-resolved photoemission studies, this is assigned as ultrafast intersystem crossing. As the intersystem crossing occurs ca. 10(4) times faster than lifetime decay, it is likely that triplets are the dominant excitons in vapor deposited CuPc films. The exciton lifetime of CuPc thin films is ca. 35 times longer than H2Pc thin films, while the diffusion lengths reported in the literature are typically quite similar for the two materials. These findings suggest that despite appearing to be similar materials at first glance, CuPc and H2Pc may transport energy in dramatically different ways. This has important implications on the design and mechanistic understanding of devices where phthalocyanines are used as an excitonic material.

Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Mousinho, A. P.; Mansano, R. D.

2015-03-01

Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

Dynamic Control of Particle Deposition in Evaporating Droplets by an External Point Source of Vapor

PubMed Central

2018-01-01

The deposition of particles on a surface by an evaporating sessile droplet is important for phenomena as diverse as printing, thin-film deposition, and self-assembly. The shape of the final deposit depends on the flows within the droplet during evaporation. These flows are typically determined at the onset of the process by the intrinsic physical, chemical, and geometrical properties of the droplet and its environment. Here, we demonstrate deterministic emergence and real-time control of Marangoni flows within the evaporating droplet by an external point source of vapor. By varying the source location, we can modulate these flows in space and time to pattern colloids on surfaces in a controllable manner. PMID:29363979

Dynamic Control of Particle Deposition in Evaporating Droplets by an External Point Source of Vapor.

PubMed

Malinowski, Robert; Volpe, Giovanni; Parkin, Ivan P; Volpe, Giorgio

2018-02-01

The deposition of particles on a surface by an evaporating sessile droplet is important for phenomena as diverse as printing, thin-film deposition, and self-assembly. The shape of the final deposit depends on the flows within the droplet during evaporation. These flows are typically determined at the onset of the process by the intrinsic physical, chemical, and geometrical properties of the droplet and its environment. Here, we demonstrate deterministic emergence and real-time control of Marangoni flows within the evaporating droplet by an external point source of vapor. By varying the source location, we can modulate these flows in space and time to pattern colloids on surfaces in a controllable manner.

Opacity of tungsten-seeded hydrogen to 2500 K and 115 atmospheres.

NASA Technical Reports Server (NTRS)

Williams, J. R.; Partain, W. L.; Clement, J. P.

1971-01-01

Experimental investigation and measurement of the radiant heat attenuation of an aerosol which may serve as a gas core nuclear-rocket propellant. The experiment uses a tungsten-hydrogen aerosol heated to temperatures as high as 2500 K under pressures up to 115 atmospheres. The hydrogen aerosol is produced by dispersion of submicron-sized particles of tungsten in hydrogen gas. A narrow beam of broad spectrum (visible and ultraviolet) light is passed through it with the attenuation being measured as a function of wavelength. Other aerosol characteristics examined include the nature and extent of chemical reactions between the seed material and the hydrogen and the degree of dispersion of the seed material obtained before and after heating. Chemical equilibrium calculations and vapor pressure data for the refractory metals indicate that tungsten is a prime candidate for the seed material in the gas core nuclear rocket.

Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

NASA Technical Reports Server (NTRS)

Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

2004-01-01

With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating

PubMed Central

Slifka, A. J.; Filla, B. J.

2003-01-01

An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature. PMID:27413601

Thermal Conductivity Measurement of an Electron-Beam Physical-Vapor-Deposition Coating.

PubMed

Slifka, A J; Filla, B J

2003-01-01

An industrial ceramic thermal-barrier coating designated PWA 266, processed by electron-beam physical-vapor deposition, was measured using a steady-state thermal conductivity technique. The thermal conductivity of the mass fraction 7 % yttria-stabilized zirconia coating was measured from 100 °C to 900 °C. Measurements on three thicknesses of coatings, 170 μm, 350 μm, and 510 μm resulted in thermal conductivity in the range from 1.5 W/(m·K) to 1.7 W/(m·K) with a combined relative standard uncertainty of 20 %. The thermal conductivity is not significantly dependent on temperature.

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Reduced-Pressure Chemical Vapor Deposition Growth of Isolated Ge Crystals and Suspended Layers on Micrometric Si Pillars.

PubMed

Skibitzki, Oliver; Capellini, Giovanni; Yamamoto, Yuji; Zaumseil, Peter; Schubert, Markus Andreas; Schroeder, Thomas; Ballabio, Andrea; Bergamaschini, Roberto; Salvalaglio, Marco; Miglio, Leo; Montalenti, Francesco

2016-10-05

In this work, we demonstrate the growth of Ge crystals and suspended continuous layers on Si(001) substrates deeply patterned in high aspect-ratio pillars. The material deposition was carried out in a commercial reduced-pressure chemical vapor deposition reactor, thus extending the "vertical-heteroepitaxy" technique developed by using the peculiar low-energy plasma-enhanced chemical vapor deposition reactor, to widely available epitaxial tools. The growth process was thoroughly analyzed, from the formation of small initial seeds to the final coalescence into a continuous suspended layer, by means of scanning and transmission electron microscopy, X-ray diffraction, and μ-Raman spectroscopy. The preoxidation of the Si pillar sidewalls and the addition of hydrochloric gas in the reactants proved to be key to achieve highly selective Ge growth on the pillars top only, which, in turn, is needed to promote the formation of a continuous Ge layer. Thanks to continuum growth models, we were able to single out the different roles played by thermodynamics and kinetics in the deposition dynamics. We believe that our findings will open the way to the low-cost realization of tens of micrometers thick heteroepitaxial layer (e.g., Ge, SiC, and GaAs) on Si having high crystal quality.

Plasma-enhanced deposition and processing of transition metals and transition metal silicides for VLSI

NASA Astrophysics Data System (ADS)

Hess, D. W.

1986-05-01

Radiofrequency (rf) discharges have been used to deposit films of tungsten, molybdenum and titanium silicide. As-deposited tungsten films, from tungsten hexafluoride and hydrogen source gases, were metastable (beta W), with significant (>1 atomic percent) fluorine incorporation. Film resistivities were 40-55 micro ohm - cm due to the beta W, but dropped to about 8 micro ohm cm after a short heat treatment at 700 C which resulted in a phase transition to alpha W (bcc form). The high resistivity (>10,000 micro ohm) associated with molybdenum films deposited from molybdenum hexafluoride and hydrogen appeared to be a result of the formation of molybdenum trifluoride in the deposited material. Titanium silicide films formed from a discharge of titanium tetrachloride, silane, and hydrogen, displayed resistivities of about 150 micro ohm cm, due to small amounts of oxygen and chlorine incorporated during deposition. Plasma etching studies of tungsten films with fluorine containing gases suggest that the etchant species for tungsten in these discharges are fluorine atoms.

Chemical vapor deposition techniques and related methods for manufacturing microminiature thermionic converters

DOEpatents

King, Donald B.; Sadwick, Laurence P.; Wernsman, Bernard R.

2002-06-25

Methods of manufacturing microminiature thermionic converters (MTCs) having high energy-conversion efficiencies and variable operating temperatures using MEMS manufacturing techniques including chemical vapor deposition. The MTCs made using the methods of the invention incorporate cathode to anode spacing of about 1 micron or less and use cathode and anode materials having work functions ranging from about 1 eV to about 3 eV. The MTCs also exhibit maximum efficiencies of just under 30%, and thousands of the devices can be fabricated at modest costs.

One-dimensional surface-imprinted polymeric nanotubes for specific biorecognition by initiated chemical vapor deposition (iCVD).

PubMed

Ince, Gozde Ozaydin; Armagan, Efe; Erdogan, Hakan; Buyukserin, Fatih; Uzun, Lokman; Demirel, Gokhan

2013-07-24

Molecular imprinting is a powerful, generic, and cost-effective technique; however, challenges still remain related to the fabrication and development of these systems involving nonhomogeneous binding sites, insufficient template removing, incompatibility with aqueous media, low rebinding capacity, and slow mass transfer. The vapor-phase deposition of polymers is a unique technique because of the conformal nature of coating and offers new possibilities in a number of applications including sensors, microfluidics, coating, and bioaffinity platforms. Herein, we demonstrated a simple but versatile concept to generate one-dimensional surface-imprinted polymeric nanotubes within anodic aluminum oxide (AAO) membranes based on initiated chemical vapor deposition (iCVD) technique for biorecognition of immunoglobulin G (IgG). It is reported that the fabricated surface-imprinted nanotubes showed high binding capacity and significant specific recognition ability toward target molecules compared with the nonimprinted forms. Given its simplicity and universality, the iCVD method can offer new possibilities in the field of molecular imprinting.

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Khan, M. A.; Skogman, R. A.; van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates is reported. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. As best as is known this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Optimization of silicon oxynitrides by plasma-enhanced chemical vapor deposition for an interferometric biosensor

NASA Astrophysics Data System (ADS)

Choo, Sung Joong; Lee, Byung-Chul; Lee, Sang-Myung; Park, Jung Ho; Shin, Hyun-Joon

2009-09-01

In this paper, silicon oxynitride layers deposited with different plasma-enhanced chemical vapor deposition (PECVD) conditions were fabricated and optimized, in order to make an interferometric sensor for detecting biochemical reactions. For the optimization of PECVD silicon oxynitride layers, the influence of the N2O/SiH4 gas flow ratio was investigated. RF power in the PEVCD process was also adjusted under the optimized N2O/SiH4 gas flow ratio. The optimized silicon oxynitride layer was deposited with 15 W in chamber under 25/150 sccm of N2O/SiH4 gas flow rates. The clad layer was deposited with 20 W in chamber under 400/150 sccm of N2O/SiH4 gas flow condition. An integrated Mach-Zehnder interferometric biosensor based on optical waveguide technology was fabricated under the optimized PECVD conditions. The adsorption reaction between bovine serum albumin (BSA) and the silicon oxynitride surface was performed and verified with this device.

Electron-Beam Vapor Deposition of Mold Inserts Final Report CRADA No. TSB-777-94

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shepp, T.; Feeley, T.

Lawrence Livermore National Laboratory and H.G.G. Laser Fare, Inc. studied the application of electron-beam vapor deposition technology to the production of mold inserts for use in an injection molding machine by Laser Fare. Laser Fare provided LLNL with the requirements of the mold inserts as well as sample inserts. LLNL replicated the mold insert(s) to Laser Fare for testing by Laser Fare.

Electrochemical Synthesis of Binary Carbides of Tungsten and Iron (Nickel, Cobalt) in Halide-Oxide Melts at 823 K

NASA Astrophysics Data System (ADS)

Kushkhov, Hasbi; Adamokova, Marina; Kvashin, Vitalij; Kardanov, Anzor; Gramoteeva, Svetlana

2007-12-01

Iron, cobalt and nickel powders are used as binding components for the production of articles of tungsten carbide by the hot pressing method. This fact and the unique properties of binary carbides of tungsten-iron triad metals encouraged the search for new ways of their synthesis. In the present work, the attempt to synthezise binary tungsten-nickel (cobalt, iron) carbides in molten KCl-NaCl-CsCl at 823 K was made. As a result of voltammetry research, it was established that in eutectic KCl-NaCl-CsCl melts the deposition potentials ofWand Ni (Co, Fe) differ by 150 - 350 mV from each other, which makes their co-deposition difficult. It is possible to shift the deposition potentials of tungsten and metals of the iron triad metals towards each other by changing the acid-base properties of the melt. The products of electrolysis in these molten system were identified by X-ray analysis. They are mixtures of tungsten and nickel (cobalt, iron) carbides: Ni2W4C, W6C2.54; Co3W3C, Co6W6C, W2C, Co3C; FeW3C.

A kinetic model for the characteristic surface morphologies of thin films by directional vapor deposition

NASA Astrophysics Data System (ADS)

Li, Kun-Dar; Huang, Po-Yu

2017-12-01

In order to simulate a process of directional vapor deposition, in this study, a numerical approach was applied to model the growth and evolution of surface morphologies for the crystallographic structures of thin films. The critical factors affecting the surface morphologies in a deposition process, such as the crystallographic symmetry, anisotropic interfacial energy, shadowing effect, and deposition rate, were all enclosed in the theoretical model. By altering the parameters of crystallographic symmetry in the structures, the faceted nano-columns with rectangular and hexagonal shapes were established in the simulation results. Furthermore, for revealing the influences of the anisotropic strength and the deposition rate theoretically on the crystallographic structure formations, various parameters adjusted in the numerical calculations were also investigated. Not only the morphologies but also the surface roughnesses for different processing conditions were distinctly demonstrated with the quantitative analysis of the simulations.

Backbone-Degradable Polymers Prepared by Chemical Vapor Deposition.

PubMed

Xie, Fan; Deng, Xiaopei; Kratzer, Domenic; Cheng, Kenneth C K; Friedmann, Christian; Qi, Shuhua; Solorio, Luis; Lahann, Joerg

2017-01-02

Polymers prepared by chemical vapor deposition (CVD) polymerization have found broad acceptance in research and industrial applications. However, their intrinsic lack of degradability has limited wider applicability in many areas, such as biomedical devices or regenerative medicine. Herein, we demonstrate, for the first time, a backbone-degradable polymer directly synthesized via CVD. The CVD co-polymerization of [2.2]para-cyclophanes with cyclic ketene acetals, specifically 5,6-benzo-2-methylene-1,3-dioxepane (BMDO), results in well-defined, hydrolytically degradable polymers, as confirmed by FTIR spectroscopy and ellipsometry. The degradation kinetics are dependent on the ratio of ketene acetals to [2.2]para-cyclophanes as well as the hydrophobicity of the films. These coatings address an unmet need in the biomedical polymer field, as they provide access to a wide range of reactive polymer coatings that combine interfacial multifunctionality with degradability. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Reflectance degradation of a secondary concentrator by nitrate salt vapor deposition in an open volumetric receiver configuration

NASA Astrophysics Data System (ADS)

Lahlou, Radia; Armstrong, Peter R.; Calvet, Nicolas; Shamim, Tariq

2017-06-01

Nitrate salt vapor deposition on the reflecting surface of a secondary concentrator placed on top of an open molten salt tank at 500 °C is investigated using a lab-scale setup over an 8h-exposure cycle. Deposition, consisting of mostly spherical particles, is characterized in terms of chemical composition using energy dispersive X-ray spectroscopy. The corresponding specular reflectance degradation both temporary (before washing off the salt deposits) and permanent (residual reflectance loss after cleaning), is measured at different incidence angles and at reference points located at different heights. Reflectance drop due to salt deposits is compared to the one resulting from dust deposition. Long-term reflectance degradation by means of corrosion needs to be further studied through suitable accelerated aging tests.

Tungsten migration in Alcator C-Mod: sputtering and melting

NASA Astrophysics Data System (ADS)

Wright, G. M.; Barnard, H.; Lipschultz, B.; Whyte, D. G.

2010-11-01

A row of bulk tungsten (W) tiles were installed near the typical outer strike-point location in the Alcator C-Mod divertor in 2007. In the 2009/2010 campaign, one of the W tiles mechanically failed resulting in significant W melting at that location. Post-campaign PIXE surface analysis has been used to observe tungsten (W) deposition and migration patterns in the divertor for the typical operations (sputtering only) and operation with melted components. For sputtering conditions, W deposition of up to 20 nm equivalent thickness is observed at various divertor surfaces indicating prompt re-deposition at the outer divertor, neutral and ion transport through the private-flux region and ion transport in the scrape off layer. For melting conditions, W deposition of up to 400 nm equivalent thickness is observed at some locations at the outer divertor. However, the toroidal distribution of W on the outer divertor is strongly non-uniform. There is no W deposition measured on the inner wall limiter. These results indicate that impurity migration is affected by the erosion mechanism and source, with the migration from melting being less predictable and uniform than from the sputtering case. Supported by USDoE award DE-SC00-02060.

Carbon nanotubes synthesized by Ni-assisted atmospheric pressure thermal chemical vapor deposition

NASA Astrophysics Data System (ADS)

Choi, G. S.; Cho, Y. S.; Hong, S. Y.; Park, J. B.; Son, K. H.; Kim, D. J.

2002-03-01

A detailed systematic study on the growth morphology of carbon nanotubes (CNTs) on Si in atmospheric pressure thermal chemical vapor deposition was undertaken. The role of NH3 for vertical alignment of CNTs was investigated. The direct cause for the alignment was a dense distribution of the catalytic metal particles, but that the particles are maintained catalytically active under amorphous carbon deposits was established by NH3. It allows a dense nucleation of the CNTs, and consequently, assists vertical alignment through entanglement and mechanical leaning among the tubes. The CNTs grew in a base growth mode. Since Ni is consumed both by silicide reaction and by capture into the growing tube, the growth stops when Ni is totally depleted. It occurs earlier for smaller particles, and thus a long time of growth results in a thin bottom with poor adhesion.

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Greenaway, Ann; Boucher, Jason

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substratesmore » conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew

Fabrication and characterization of a cell electrostimulator device combining physical vapor deposition and laser ablation

NASA Astrophysics Data System (ADS)

Aragón, Angel L.; Pérez, Eliseo; Pazos, Antonio; Bao-Varela, Carmen; Nieto, Daniel

2017-08-01

In this work we present the process of fabrication and optimization of a prototype of a cell electrostimulator device for medical application combining physical vapor deposition and laser ablation. The fabrication of the first prototype begins with a deposition of a thin layer of 200 nm of aluminium on a borosilicate glass substrate using physical vapor deposition (PVD). In the second stage the geometry design of the electrostimulator is made in a CAD-like software available in a Nd:YVO4 Rofin Power line 20E, operating at the fundamental wavelength of 1064 nm and 20 ns pulse width. Choosing the proper laser parameters the negative of the electrostimulator desing is ablated. After that the glass is assembled between two polycarbonate sheets and a thick sheet of polydimethylsiloxane (PDMS). The PDMS sheet has a round hole in where cells are placed. There is also included a thin soda-lime silicate glass (100 μm) between the electrostimulator and the PMDS to prevent the cells for being in contact with the electric circuit. In order to control the electrical signal applied to the electrostimulator is used a digital I/O device from National Instruments (USB-6501) which provides 5 V at the output monitored by a software programmed in LabVIEW. Finally, the optical and electrical characterization of the cell electrostimulator device is presented.

Chemical vapor deposition of Ta{sub 2}O{sub 5} corrosion resistant coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Graham, D.W.; Stinton, D.P.

1992-12-31

Silicon carbide and silicon nitride heat engine components are susceptible to hot corrosion by molten Na{sub 2}SO{sub 4} which forms from impurities present in fuel and the environment. Chemically vapor deposited Ta{sub 2}O{sub 5} coatings are being developed as a means to protect components from reaction with these salts and preserve their structural properties. Investigations to optimize the structure of the coating have revealed that the deposition conditions dramatically affect the coating morphology. Coatings deposited at high temperatures are typically columnar in structure; high concentrations of the reactant gases produce oxide powders on the substrate surface. Ta{sub 2}O{sub 5} depositedmore » at low temperatures consists of grains that are finer and have significantly less porosity than that formed at high temperatures. Samples of coatings which have been produced by CVD have successfully completed preliminary testing for resistance to corrosion by Na{sub 2}SO{sub 4}.« less

Rare-earth-doped optical-fiber core deposition using full vapor-phase SPCVD process

NASA Astrophysics Data System (ADS)

Barnini, A.; Robin, T.; Cadier, B.; Aka, G.; Caurant, D.; Gotter, T.; Guyon, C.; Pinsard, E.; Guitton, P.; Laurent, A.; Montron, R.

2017-02-01

One key parameter in the race toward ever-higher power fiber lasers remains the rare earth doped optical core quality. Modern Large Mode Area (LMA) fibers require a fine radial control of the core refractive index (RI) close to the silica level. These low RI are achieved with multi-component materials that cannot be readily obtained using conventional solution doping based Modified Chemical Vapor Deposition (MCVD) technology. This paper presents a study of such optical material obtained through a full-vapor phase Surface Plasma Chemical Vapor Deposition (SPCVD). The SPCVD process generates straight glassy films on the inner surface of a thermally regulated synthetic silica tube under vacuum. The first part of the presented results points out the feasibility of ytterbium-doped aluminosilicate fibers by this process. In the second part we describe the challenge controlling the refractive index throughout the core diameter when using volatile fluorine to create efficient LMA fiber profiles. It has been demonstrated that it is possible to counter-act the loss of fluorine at the center of the core by adjusting the core composition locally. Our materials yielded, when used in optical fibers with numerical apertures ranging from 0.07 to 0.09, power conversion efficiency up to 76% and low background losses below 20 dB/km at 1100nm. Photodarkening has been measured to be similar to equivalent MCVD based fibers. The use of cerium as a co-dopant allowed for a complete mitigation of this laser lifetime detrimental effect. The SPCVD process enables high capacity preforms and is particularly versatile when it comes to radial tailoring of both rare earth doping level and RI. Large core diameter preforms - up to 4mm - were successfully produced.

A Strategy to Design High-Density Nanoscale Devices utilizing Vapor Deposition of Metal Halide Perovskite Materials.

PubMed

Hwang, Bohee; Lee, Jang-Sik

2017-08-01

The demand for high memory density has increased due to increasing needs of information storage, such as big data processing and the Internet of Things. Organic-inorganic perovskite materials that show nonvolatile resistive switching memory properties have potential applications as the resistive switching layer for next-generation memory devices, but, for practical applications, these materials should be utilized in high-density data-storage devices. Here, nanoscale memory devices are fabricated by sequential vapor deposition of organolead halide perovskite (OHP) CH 3 NH 3 PbI 3 layers on wafers perforated with 250 nm via-holes. These devices have bipolar resistive switching properties, and show low-voltage operation, fast switching speed (200 ns), good endurance, and data-retention time >10 5 s. Moreover, the use of sequential vapor deposition is extended to deposit CH 3 NH 3 PbI 3 as the memory element in a cross-point array structure. This method to fabricate high-density memory devices could be used for memory cells that occupy large areas, and to overcome the scaling limit of existing methods; it also presents a way to use OHPs to increase memory storage capacity. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Parametric Investigation of the Isothermal Kinetics of Growth of Graphene on a Nickel Catalyst in the Process of Chemical Vapor Deposition of Hydrocarbons

NASA Astrophysics Data System (ADS)

Futko, S. I.; Shulitskii, B. G.; Labunov, V. A.; Ermolaeva, E. M.

2016-11-01

A kinetic model of isothermal synthesis of multilayer graphene on the surface of a nickel foil in the process of chemical vapor deposition, on it, of hydrocarbons supplied in the pulsed regime is considered. The dependences of the number of graphene layers formed and the time of their growth on the temperature of the process, the concentration of acetylene, and the thickness of the nickel foil were calculated. The regime parameters of the process of chemical vapor deposition, at which single-layer graphene and bi-layer graphene are formed, were determined. The dynamics of growth of graphene domains at chemical-vapor-deposition parameters changing in wide ranges was investigated. It is shown that the time dependences of the rates of growth of single-layer graphene and bi-layer graphene are nonlinear in character and that they are determined by the kinetics of nucleation and growth of graphene and the diffusion flow of carbon atoms in the nickel foil.

Radionuclide deposition control

DOEpatents

Brehm, William F.; McGuire, Joseph C.

1980-01-01

The deposition of radionuclides manganese-54, cobalt-58 and cobalt-60 from liquid sodium coolant is controlled by providing surfaces of nickel or high nickel alloys to extract the radionuclides from the liquid sodium, and by providing surfaces of tungsten, molybdenum or tantalum to prevent or retard radionuclide deposition.

Finite Element Analysis Modeling of Chemical Vapor Deposition of Silicon Carbide

DTIC Science & Technology

2014-06-19

thesis primarily focuses on mass transport by gas -phase flow and diffusion , chemical reaction in gas phase and on solid surfaces, and thin film...chemical vapor deposition (CVD). This thesis primarily focuses on mass transport by gas -phase flow and diffusion , chemical reaction in gas phase and...9 Fluid Flow…………………………………………..…………………..…………….9 Thermodynamics………………………………………..………………….….…….11 Chemical Reaction and Diffusion

Effects of etchants in the transfer of chemical vapor deposited graphene

NASA Astrophysics Data System (ADS)

Wang, M.; Yang, E. H.; Vajtai, R.; Kono, J.; Ajayan, P. M.

2018-05-01

The quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration.

Long-term stable water vapor permeation barrier properties of SiN/SiCN/SiN nanolaminated multilayers grown by plasma-enhanced chemical vapor deposition at extremely low pressures

DOE Office of Scientific and Technical Information (OSTI.GOV)

Choi, Bum Ho, E-mail: bhchoi@kitech.re.kr; Lee, Jong Ho

2014-08-04

We investigated the water vapor permeation barrier properties of 30-nm-thick SiN/SiCN/SiN nanolaminated multilayer structures grown by plasma enhanced chemical vapor deposition at 7 mTorr. The derived water vapor transmission rate was 1.12 × 10{sup −6} g/(m{sup 2} day) at 85 °C and 85% relative humidity, and this value was maintained up to 15 000 h of aging time. The X-ray diffraction patterns revealed that the nanolaminated film was composed of an amorphous phase. A mixed phase was observed upon performing high resolution transmission electron microscope analysis, which indicated that a thermodynamically stable structure was formed. It was revealed amorphous SiN/SiCN/SiN multilayer structures that are freemore » from intermixed interface defects effectively block water vapor permeation into active layer.« less

Atomic layer epitaxy of GaN over sapphire using switched metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Asif Khan, M.; Skogman, R. A.; Van Hove, J. M.; Olson, D. T.; Kuznia, J. N.

1992-03-01

In this letter we report the first switched atomic layer epitaxy (SALE) of single crystal GaN over basal plane sapphire substrates. A low pressure metalorganic chemical vapor deposition (LPMOCVD) system was used for the epilayer depositions. In contrast to conventional LPMOCVD requiring temperatures higher than 700 °C, the SALE process resulted in single crystal insulating GaN layers at growth temperatures ranging from 900 to 450 °C. The band-edge transmission and the photoluminescence of the films from the SALE process were comparable to the best LPMOCVD films. To the best of our knowledge this is the first report of insulating GaN films which show excellent band-edge photoluminescence.

Industrial Scale Synthesis of Carbon Nanotubes Via Fluidized Bed Chemical Vapor Deposition: A Senior Design Project

ERIC Educational Resources Information Center

Smith, York R.; Fuchs, Alan; Meyyappan, M.

2010-01-01

Senior year chemical engineering students designed a process to produce 10 000 tonnes per annum of single wall carbon nanotubes (SWNT) and also conducted bench-top experiments to synthesize SWNTs via fluidized bed chemical vapor deposition techniques. This was an excellent pedagogical experience because it related to the type of real world design…

A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

PubMed

Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

2011-09-01

The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

The contribution of vapor deposition to amorphous rims on lunar soil grains. [Abstract only

NASA Technical Reports Server (NTRS)

Keller, L. P.; Mckay, D. S.

1994-01-01

Recent analysis analytical electron microscope study of lunar soils showed that the approximately 60-nm-wide amorphous rims surrounding many lunar soils grains exhibit distinct compositional differences from their hosts. On average, the amorphous rim compositions reflect the local bulk soil composition with the exceptions of Si and S, which are enriched relative to the bulk soil. These chemical trends led us to propose that the amorphous rims were in fact deposits of impact-generated vapors produced during regolith gardening, a hypothesis that runs contrary to the generally accepted view that the rims are produced through amorphization of the outer parts of mineral grains by interaction with the solar wind. Analytical data are reported for amorphous rims on individual minerals in lunar soils in order to show that the magnitude of the chemical differences between rim and host are so great that they require a major addition of foreign elements to the grain surfaces. The average composition of amorphous rims is listed as a function of host mineralogy as determined in microtone thin sections using energy-dispersive X-ray spectrometry in the transmission electron microscope. As the host mineral becomes chemically more complex, the chemical differences are not as clear. The average rim compositions are remarkably similar and are independent of the host grain mineralogy. Whether there are 'sputtering' or radiation effects superimposed on the vapor-deposited material can be debated. We do not explicitly exclude the effects of radiation damage as a contributing factor to the formation of amorphous rims; we are merely emphasizing the major role played by condensed vapors in the formation of amorphous rims on lunar soil grains.

Vapor purification with self-cleaning filter

DOEpatents

Josephson, Gary B.; Heath, William O.; Aardahl, Christopher L.

2003-12-09

A vapor filtration device including a first electrode, a second electrode, and a filter between the first and second electrodes is disclosed. The filter is formed of dielectric material and the device is operated by applying a first electric potential between the electrodes to polarize the dielectric material such that upon passing a vapor stream through the filter, particles from the vapor stream are deposited onto the filter. After depositing the particles a second higher voltage is applied between the electrodes to form a nonthermal plasma around the filter to vaporize the collected particles thereby cleaning the filter. The filter can be a packed bed or serpentine filter mat, and an optional upstream corona wire can be utilized to charge airborne particles prior to their deposition on the filter.

Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

PubMed Central

Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

2016-01-01

Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

Kinetic and microstructural study of titanium nitride deposited by laser chemical vapor deposition

NASA Astrophysics Data System (ADS)

Egland, Keith Maynard

Titanium nitride (TiN) films were deposited onto Ti-6Al-4V substrates by laser chemical vapor deposition using a cw COsb2 laser and TiClsb4,\\ Nsb2, and Hsb2 reactant gases. In-situ laser induced fluorescence (LIF) and multi-wavelength pyrometry determined relative titanium gas phase atomic number density and deposition temperature, respectively. Deposited films were yellow to gold in color. Transmission electron microscopy on one sample revealed a face-centered cubic structure with a lattice parameter (0.4237 nm) expected for TiN. Auger electron spectroscopy found substoichiometric compositions with a N/Ti ratio between 0.7 and 0.9. Variables decreasing grain size (lower temperature, higher TiClsb4 input) decreased the N/Ti ratio. Higher Nsb2 input increased stoichiometry, while larger Hsb2 input decreased stoichiometry. The deposit substoichiometry is believed to be caused by diffusion of nitrogen through TiN grain boundaries to the titanium alloy substrate. The morphology starts as a dense polycrystalline structure evolving into a columnar structure having facets or nodules at the surface with crystallite sizes ranging from 10-1000 nm. TiClsb4 input had a inverse correlation with crystallite size, while Nsb2:Hsb2 ratio had minimal effect; the crystallite size (G) varied exponentially with temperature (T) for a given irradiation time, i.e., G = C exp (-28000/T), with constant C reflecting substrate roughness and gas composition. Microhardness tests revealed substrate contributions; nevertheless, films appeared to have a minimum hardness of 2000 Hsbv. The deposition apparent activation energy was calculated as 122 ± 9 kJ/mole using growth rates measured by film height and 117 ± 23 kJ/mole using growth rates measured by LIF signals. This puts the process in the surface kinetic growth regime over the temperature range 1370-1610 K. Above Nsb2 and Hsb2 levels of 1.25% and below TiClsb4 input of 4.5%, the growth rate has a half-order dependence on nitrogen and a

Enhanced vacuum arc vapor deposition electrode

NASA Technical Reports Server (NTRS)

Weeks, Jack L. (Inventor); Todd, Douglas M. (Inventor)

1999-01-01

A process for forming a thin metal coating on a substrate wherein a gas stream heated by an electrical current impinges on a metallic target in a vacuum chamber to form a molten pool of the metal and then vaporize a portion of the pool, with the source of the heated gas stream being on one side of the target and the substrate being on the other side of the target such that most of the metallic vapor from the target is directed at the substrate.

Characteristics of Ge-Sb-Te films prepared by cyclic pulsed plasma-enhanced chemical vapor deposition.

PubMed

Suk, Kyung-Suk; Jung, Ha-Na; Woo, Hee-Gweon; Park, Don-Hee; Kim, Do-Heyoung

2010-05-01

Ge-Sb-Te (GST) thin films were deposited on TiN, SiO2, and Si substrates by cyclic-pulsed plasma-enhanced chemical vapor deposition (PECVD) using Ge{N(CH3)(C2H5)}, Sb(C3H7)3, Te(C3H7)3 as precursors in a vertical flow reactor. Plasma activated H2 was used as the reducing agent. The growth behavior was strongly dependent on the type of substrate. GST grew as a continuous film on TiN regardless of the substrate temperature. However, GST formed only small crystalline aggregates on Si and SiO2 substrates, not a continuous film, at substrate temperatures > or = 200 degrees C. The effects of the deposition temperature on the surface morphology, roughness, resistivity, crystallinity, and composition of the GST films were examined.

Morphology and structure of Ti-doped diamond films prepared by microwave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Liu, Xuejie; Lu, Pengfei; Wang, Hongchao; Ren, Yuan; Tan, Xin; Sun, Shiyang; Jia, Huiling

2018-06-01

Ti-doped diamond films were deposited through a microwave plasma chemical vapor deposition (MPCVD) system for the first time. The effects of the addition of Ti on the morphology, microstructure and quality of diamond films were systematically investigated. Secondary ion mass spectrometry results show that Ti can be added to diamond films through the MPCVD system using tetra n-butyl titanate as precursor. The spectra from X-ray diffraction, Raman spectroscopy, and X-ray photoelectron spectroscopy and the images from scanning electron microscopy of the deposited films indicate that the diamond phase clearly exists and dominates in Ti-doped diamond films. The amount of Ti added obviously influences film morphology and the preferred orientation of the crystals. Ti doping is beneficial to the second nucleation and the growth of the (1 1 0) faceted grains.

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.

PubMed

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Chen, Yu; Lin, Yung-Chen; Qu, Yongquan; Bai, Jingwei; Ivanov, Ivan A; Liu, Gang; Huang, Yu; Duan, Xiangfeng

2012-01-28

Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH 4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH 4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm 2 V -1 s -1 at room temperature.

Suppressed beta relaxations and reduced heat capacity in ultrastable organic glasses prepared by physical vapor deposition

NASA Astrophysics Data System (ADS)

Ediger, Mark

Glasses play an important role in technology as a result of their macroscopic homogeneity (e.g., the clarity of window glass) and our ability to tune properties through composition changes. A problem with liquid-cooled glasses is that they exhibit marginal kinetic stability and slowly evolve towards lower energy glasses and crystalline states. In contrast, we have shown that physical vapor deposition can prepare glasses with very high kinetic stability. These materials have properties expected for ``million-year-old'' glasses, including high density, low enthalpy, and high mechanical moduli. We have used nanocalorimetry to show that these high stability glasses have lower heat capacities than liquid-cooled glasses for a number of molecular systems. Dielectric relaxation has been used to show that the beta relaxation can be suppressed by nearly a factor of four in vapor-deposited toluene glasses, indicating a very tight packing environment. Consistent with this view, computer simulations of high stability glasses indicate reduced Debye-Waller factors. These high stability materials raise interesting questions about the limiting properties of amorphous packing arrangements.

The organometallic chemical vapor deposition of transition metal carbides: The use of homoleptic alkyls

DOE Office of Scientific and Technical Information (OSTI.GOV)

Healy, M.D.; Smith, D.C.; Springer, R.W.

1993-12-31

The organometallic chemical vapor deposition of transition metal carbides (M = Ti, Zr, Hf, and Cr) from tetraneopentyl-metal precursors has been carried out. Metal carbides can be deposited on Si, Al{sub 2}O{sub 3}, and stainless steel substrates from M[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} at temperatures in the range of 300 to 750 C and pressures from 10{sup {minus}2} to 10{sup {minus}4} Torr. Thin films have also been grown using a carrier gas (Ar, H{sub 2}). The effects of variation of the metal center, deposition conditions, and reactor design on the resulting material have been examined by SEM, XPS, XRD, ERDmore » and AES. Hydrocarbon fragments generated in the deposition chamber have been studied in by in-situ mass spectrometry. Complementary studies examining the UHV surface decomposition of Zr[CH{sub 2}C(CH{sub 3}){sub 3}]{sub 4} have allowed for a better understanding of the mechanism leading to film growth.« less

Vacuum Plasma Spray Forming of Tungsten Lorentz Force Accelerator Components

NASA Technical Reports Server (NTRS)

Zimmerman, Frank R.

2004-01-01

The Vacuum Plasma Spray (VPS) Laboratory at NASA's Marshall Space Flight Center, working with the Jet Propulsion Laboratory, has developed and demonstrated a fabrication technique using the VPS process to form anode and cathode sections for a Lorentz force accelerator made from tungsten. Lorentz force accelerators are an attractive form of electric propulsion that provides continuous, high-efficiency propulsion at useful power levels for such applications as orbit transfers or deep space missions. The VPS process is used to deposit refractory metals such as tungsten onto a graphite mandrel of the desired shape. Because tungsten is reactive at high temperatures, it is thermally sprayed in an inert environment where the plasma gun melts and deposits the molten metal powder onto a mandrel. A three-axis robot inside the chamber controls the motion of the plasma spray torch. A graphite mandrel acts as a male mold, forming the required contour and dimensions for the inside surface of the anode or cathode of the accelerator. This paper describes the processing techniques, design considerations, and process development associated with the VPS forming of Lorentz force accelerator components.

Tungsten coating for improved wear resistance and reliability of microelectromechanical devices

DOEpatents

Fleming, James G.; Mani, Seethambal S.; Sniegowski, Jeffry J.; Blewer, Robert S.

2001-01-01

A process is disclosed whereby a 5-50-nanometer-thick conformal tungsten coating can be formed over exposed semiconductor surfaces (e.g. silicon, germanium or silicon carbide) within a microelectromechanical (MEM) device for improved wear resistance and reliability. The tungsten coating is formed after cleaning the semiconductor surfaces to remove any organic material and oxide film from the surface. A final in situ cleaning step is performed by heating a substrate containing the MEM device to a temperature in the range of 200-600 .degree. C. in the presence of gaseous nitrogen trifluoride (NF.sub.3). The tungsten coating can then be formed by a chemical reaction between the semiconductor surfaces and tungsten hexafluoride (WF.sub.6) at an elevated temperature, preferably about 450.degree. C. The tungsten deposition process is self-limiting and covers all exposed semiconductor surfaces including surfaces in close contact. The present invention can be applied to many different types of MEM devices including microrelays, micromirrors and microengines. Additionally, the tungsten wear-resistant coating of the present invention can be used to enhance the hardness, wear resistance, electrical conductivity, optical reflectivity and chemical inertness of one or more semiconductor surfaces within a MEM device.

Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

NASA Technical Reports Server (NTRS)

Levy, Moises; Sarma, Bimal K.

1994-01-01

Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen

NASA Astrophysics Data System (ADS)

Morimoto, Takashi; Ansari, S. G.; Yoneyama, Koji; Nakajima, Teppei; Masuda, Atsushi; Matsumura, Hideki; Nakamura, Megumi; Umemoto, Hironobu

2006-02-01

The mechanism of catalytic chemical vapor deposition (Cat-CVD) processes for hexamethyldisilazane (HMDS) and trisdimethylaminosilane (TDMAS), which are used as source gases to prepare SiNx or SiCxNy films, was studied using three different mass spectrometric techniques: ionization by Li+ ion attachment, vacuum-ultraviolet radiation and electron impact. The results for HMDS show that Si-N bonds dissociate selectively, although Si-C bonds are weaker, and (CH3)3SiNH should be one of the main precursors of deposited films. This decomposition mechanism did not change when NH3 was introduced, but the decomposition efficiency was slightly increased. Similar results were obtained for TDMAS.

Calibrated vapor generator source

DOEpatents

Davies, John P.; Larson, Ronald A.; Goodrich, Lorenzo D.; Hall, Harold J.; Stoddard, Billy D.; Davis, Sean G.; Kaser, Timothy G.; Conrad, Frank J.

1995-01-01

A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet.

Calibrated vapor generator source

DOEpatents

Davies, J.P.; Larson, R.A.; Goodrich, L.D.; Hall, H.J.; Stoddard, B.D.; Davis, S.G.; Kaser, T.G.; Conrad, F.J.

1995-09-26

A portable vapor generator is disclosed that can provide a controlled source of chemical vapors, such as, narcotic or explosive vapors. This source can be used to test and calibrate various types of vapor detection systems by providing a known amount of vapors to the system. The vapor generator is calibrated using a reference ion mobility spectrometer. A method of providing this vapor is described, as follows: explosive or narcotic is deposited on quartz wool, placed in a chamber that can be heated or cooled (depending on the vapor pressure of the material) to control the concentration of vapors in the reservoir. A controlled flow of air is pulsed over the quartz wool releasing a preset quantity of vapors at the outlet. 10 figs.

Method of making AlInSb by metal-organic chemical vapor deposition

DOEpatents

Biefeld, Robert M.; Allerman, Andrew A.; Baucom, Kevin C.

2000-01-01

A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

Thermal conductivity of ultra-thin chemical vapor deposited hexagonal boron nitride films

NASA Astrophysics Data System (ADS)

Alam, M. T.; Bresnehan, M. S.; Robinson, J. A.; Haque, M. A.

2014-01-01

Thermal conductivity of freestanding 10 nm and 20 nm thick chemical vapor deposited hexagonal boron nitride films was measured using both steady state and transient techniques. The measured value for both thicknesses, about 100 ± 10 W m-1 K-1, is lower than the bulk basal plane value (390 W m-1 K-1) due to the imperfections in the specimen microstructure. Impressively, this value is still 100 times higher than conventional dielectrics. Considering scalability and ease of integration, hexagonal boron nitride grown over large area is an excellent candidate for thermal management in two dimensional materials-based nanoelectronics.

Enhanced cyclic stability of SnS microplates with conformal carbon coating derived from ethanol vapor deposition for sodium-ion batteries

NASA Astrophysics Data System (ADS)

Li, Xiang; Liu, Jiangwen; Ouyang, Liuzhang; Yuan, Bin; Yang, Lichun; Zhu, Min

2018-04-01

Carbon coated SnS microplates (SnS@C MPs) were prepared via a facile chemical vapor deposition method using SnS2 nanoflakes as precursor and ethanol vapor as carbon source. The carbon coating restrains the growth of SnS during the heat treatment. Furthermore, it improves the electronic conductivity as well as accommodates volume variations of SnS during the sodiation and desodiation processes. Therefore, the rate capability and cycle performance of the SnS@C MPs as anode materials for sodium-ion batteries are remarkably enhanced compared with the bare SnS and the SnS2 precursor. At current densities of 0.1, 0.2, 0.5, 1 and 2 A g-1, the optimized SnS@C MPs exhibit stable capacities of 602.9, 532.1, 512.2, 465.9 and 427.2 mAh g-1, respectively. At 1 A g-1, they show a reversible capacity of 528.8 mAh g-1 in the first cycle, and maintain 444.7 mAh g-1 after 50 cycles, with capacity retention of 84.1%. The carbon coating through chemical vapor deposition using ethanol vapor as carbon sources is green, simple and cost-effective, which shows great promise to improve the reversible Na+ storage of electrode materials.

Effect of the carrier gas flow rate on the microstructure evolution and the generation of the charged nanoparticles during silicon chemical vapor deposition.

PubMed

Youn, Woong-Kyu; Kim, Chan-Soo; Hwang, Nong-Moon

2013-10-01

The generation of charged nanoparticles in the gas phase has been continually reported in many chemical vapor deposition processes. Charged silicon nanoparticles in the gas phase were measured using a differential mobility analyzer connected to an atmospheric-pressure chemical vapor deposition reactor at various nitrogen carrier gas flow rates (300-1000 standard cubic centimeter per minute) under typical conditions for silicon deposition at the reactor temperature of 900 degrees C. The carrier gas flow rate affected not only the growth behavior of nanostructures but also the number concentration and size distribution of both negatively and positively charged nanoparticles. As the carrier gas flow rate decreased, the growth behavior changed from films to nanowires, which grew without catalytic metal nanoparticles on a quartz substrate.

Heteroepitaxial diamond growth on 4H-SiC using microwave plasma chemical vapor deposition.

PubMed

Moore, Eric; Jarrell, Joshua; Cao, Lei

2017-09-01

Deposition of heteroepitaxial diamond via microwave chemical vapor deposition has been performed on a 4H-SiC substrate using bias enhanced nucleation followed by a growth step. In future work, the diamond film will serve as a protective layer for an alpha particle sensor designed to function in an electrorefiner during pyroprocessing of spent fuel. The diamond deposition on the 4H-SiC substrate was carried out using a methane-hydrogen gas mixture with varying gas flow rates. The nucleation step was conducted for 30 minutes and provided sufficient nucleation sites to grow a diamond film on various locations on the substrate. The resulting diamond film was characterized using Raman spectroscopy exhibiting the strong Raman peak at 1332 cm -1 . Scanning electron microscopy was used to observe the surface morphology and the average grain size of the diamond film was observed to be on the order of ∼2-3 μm.

Airfoil deposition model

NASA Technical Reports Server (NTRS)

Kohl, F. J.

1982-01-01

The methodology to predict deposit evolution (deposition rate and subsequent flow of liquid deposits) as a function of fuel and air impurity content and relevant aerodynamic parameters for turbine airfoils is developed in this research. The spectrum of deposition conditions encountered in gas turbine operations includes the mechanisms of vapor deposition, small particle deposition with thermophoresis, and larger particle deposition with inertial effects. The focus is on using a simplified version of the comprehensive multicomponent vapor diffusion formalism to make deposition predictions for: (1) simple geometry collectors; and (2) gas turbine blade shapes, including both developing laminar and turbulent boundary layers. For the gas turbine blade the insights developed in previous programs are being combined with heat and mass transfer coefficient calculations using the STAN 5 boundary layer code to predict vapor deposition rates and corresponding liquid layer thicknesses on turbine blades. A computer program is being written which utilizes the local values of the calculated deposition rate and skin friction to calculate the increment in liquid condensate layer growth along a collector surface.

Optical and compositional characterization of SiOxNy and SiOx thin films deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Roschuk, T.; Wojcik, J.; Tan, X.; Davies, J. A.; Mascher, P.

2004-05-01

Thin silicon oxynitride (SiOxNy) and silicon-rich silicon-oxide (SiOx,x<=2) films of varying composition have been deposited by electron cyclotron resonance plasma enhanced chemical vapor deposition. Films were deposited using various source gas flow rates while maintaining a constant chamber pressure. Thicknesses and refractive indices for these films were determined using ellipsometry. Bonding of the constituent atoms was analyzed using Fourier transform infrared (FTIR) spectroscopy. FTIR spectroscopy also allowed for the detection of bonded species such as hydrogen. Compositional characteristics were determined using various forms of ion beam analysis such as Rutherford backscattering and elastic recoil detection. These analysis techniques were used to determine the values of x and y, the molar fractions of oxygen and nitrogen, respectively, and the total amount of hydrogen present in the films. Using the results obtained from these methods the film characteristics were determined as a function of the deposition conditions. .

Electrochromic and optical properties of tungsten oxide films deposited with DC sputtering by introducing hydrogen.

PubMed

Chen, Hsi-Chao; Jan, Der-Jun; Luo, Yu-Siang; Huang, Kuo-Ting

2014-02-01

Research was undertaken to investigate the electrochromic and optical properties of tungsten oxide (WO3) films deposited by introducing hydrogen with a direct current (DC) and pulsed DC sputtering. The results show that WO3 films have optimum electrochromic properties at a hydrogen flow of 4 and 3 sccm for DC and pulsed DC, respectively. In the Raman spectra, the peak intensity increased with the increase of hydrogen flow at both 770  cm1 and 950  cm(-1) peaks, which resulted in bonds of W(6+)-O and W(6+)=O, respectively. Simultaneously, the transmittance (ΔT550  nm) variations were 65.6% and 64.4%, and the average transmittance (ΔT400-500  nm) variations were 56.7% and 56.4% for DC and pulsed DC, respectively. The bleached/colored ability of the cyclic voltammograms (CVs) was DC>pulsed DC, and the resistances of AC impedance were pulsed DC>DC.

Electron beam physical vapor deposition of YSZ electrolyte coatings for SOFCs

NASA Astrophysics Data System (ADS)

He, Xiaodong; Meng, Bin; Sun, Yue; Liu, Bochao; Li, Mingwei

2008-09-01

YSZ electrolyte coatings were prepared by electron beam physical vapor deposition (EB-PVD) at a high deposition rate of up to 1 μm/min. The YSZ coating consisted of a single cubic phase and no phase transformation occurred after annealing treatment at 1000 °C. A typical columnar structure was observed in this coating by SEM and feather-like characteristics appeared in every columnar grain. In columnar grain boundaries there were many micron-sized gaps and pores. In TEM image, many white lines were found, originating from the alignment of nanopores existing within feather-like columnar grains. The element distribution along the cross-section of the coating was homogeneous except Zr with a slight gradient. The coating exhibited a characteristic anisotropic behavior in electrical conductivity. In the direction perpendicular to coating surface the electrical conductivity was remarkably higher than that in the direction parallel to coating surface. This mainly attributed to the typical columnar structure for EB-PVD coating and the existence of many grain boundaries along the direction parallel to coating surface. For as-deposited coating, the gas permeability coefficient of 9.78 × 10 -5 cm 4 N -1 s -1 was obtained and this value was close to the critical value of YSZ electrolyte layer required for solid oxide fuel cell (SOFC) operation.

Low temperature deposition of polycrystalline silicon thin films on a flexible polymer substrate by hot wire chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, Sang-hoon; Jung, Jae-soo; Lee, Sung-soo; Lee, Sung-bo; Hwang, Nong-moon

2016-11-01

For the applications such as flexible displays and solar cells, the direct deposition of crystalline silicon films on a flexible polymer substrate has been a great issue. Here, we investigated the direct deposition of polycrystalline silicon films on a polyimide film at the substrate temperature of 200 °C. The low temperature deposition of crystalline silicon on a flexible substrate has been successfully made based on two ideas. One is that the Si-Cl-H system has a retrograde solubility of silicon in the gas phase near the substrate temperature. The other is the new concept of non-classical crystallization, where films grow by the building block of nanoparticles formed in the gas phase during hot-wire chemical vapor deposition (HWCVD). The total amount of precipitation of silicon nanoparticles decreased with increasing HCl concentration. By adding HCl, the amount and the size of silicon nanoparticles were reduced remarkably, which is related with the low temperature deposition of silicon films of highly crystalline fraction with a very thin amorphous incubation layer. The dark conductivity of the intrinsic film prepared at the flow rate ratio of RHCl=[HCl]/[SiH4]=3.61 was 1.84×10-6 Scm-1 at room temperature. The Hall mobility of the n-type silicon film prepared at RHCl=3.61 was 5.72 cm2 V-1s-1. These electrical properties of silicon films are high enough and could be used in flexible electric devices.

A Review of Carbon Nanomaterials' Synthesis via the Chemical Vapor Deposition (CVD) Method.

PubMed

Manawi, Yehia M; Samara, Ayman; Al-Ansari, Tareq; Atieh, Muataz A

2018-05-17

Carbon nanomaterials have been extensively used in many applications owing to their unique thermal, electrical and mechanical properties. One of the prime challenges is the production of these nanomaterials on a large scale. This review paper summarizes the synthesis of various carbon nanomaterials via the chemical vapor deposition (CVD) method. These carbon nanomaterials include fullerenes, carbon nanotubes (CNTs), carbon nanofibers (CNFs), graphene, carbide-derived carbon (CDC), carbon nano-onion (CNO) and MXenes. Furthermore, current challenges in the synthesis and application of these nanomaterials are highlighted with suggested areas for future research.

Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

NASA Astrophysics Data System (ADS)

Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

2016-07-01

The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

A Review of Carbon Nanomaterials’ Synthesis via the Chemical Vapor Deposition (CVD) Method

PubMed Central

Manawi, Yehia M.; Samara, Ayman; Al-Ansari, Tareq; Atieh, Muataz A.

2018-01-01

Carbon nanomaterials have been extensively used in many applications owing to their unique thermal, electrical and mechanical properties. One of the prime challenges is the production of these nanomaterials on a large scale. This review paper summarizes the synthesis of various carbon nanomaterials via the chemical vapor deposition (CVD) method. These carbon nanomaterials include fullerenes, carbon nanotubes (CNTs), carbon nanofibers (CNFs), graphene, carbide-derived carbon (CDC), carbon nano-onion (CNO) and MXenes. Furthermore, current challenges in the synthesis and application of these nanomaterials are highlighted with suggested areas for future research. PMID:29772760

Direct determination of lead in biological samples by electrothermal vaporization inductively coupled plasma mass spectrometry (ETV-ICP-MS) after furnace-fusion in the sample cuvette-tungsten boat furnace.

PubMed

Okamoto, Y

2000-06-01

The newly conceived electrothermal vaporization (ETV) system using a tungsten boat furnace (TBF) sample cuvette was designed for the direct analysis of solid samples with detection by inductively coupled plasma mass spectrometry (ICP-MS). Into this small sample cuvette, a solid mixture of the biological samples and diammonium hydrogenphosphate powder as a fusion flux was placed and situated on a TBF. Tetramethylammonium hydroxide solution was added to the mixture. After the on-furnace digestion had been completed, the analyte in the cuvette was vaporized and introduced into the ICP mass spectrometer. The solid samples were analyzed by using a calibration curve prepared from the aqueous standard solutions. The detection limit was estimated to be 5.1 pg of lead, which corresponds to 10.2 ng g(-1) of lead in solid samples when a prepared sample amount of 1.0 mg was applied. The relative standard deviation for 8 replicate measurements obtained with 100 pg of lead was calculated to be 6.5%. The analytical results for various biological samples are described.

Graphene by one-step chemical vapor deposition from ferrocene vapors: Properties and electrochemical evaluation

NASA Astrophysics Data System (ADS)

Pilatos, George; Perdikaki, Anna V.; Sapalidis, Andreas; Pappas, George S.; Giannakopoulou, Tatiana; Tsoutsou, Dimitra; Xenogiannopoulou, Evangelia; Boukos, Nikos; Dimoulas, Athanasios; Trapalis, Christos; Kanellopoulos, Nick K.; Karanikolos, Georgios N.

2016-02-01

Growth of few-layer graphene using ferrocene as precursor by chemical vapor deposition is reported. The growth did not involve any additional carbon or catalyst source or external hydrocarbon gases. Parametric investigation was performed using different conditions, namely, varying growth temperature from 600 to1000 °C, and growth duration from 5 min to 3 h, as well as using fast quenching or gradual cooling after the thermal treatment, in order to examine the effect on the quality of the produced graphene. The growth took place on silicon wafers and resulted, under optimal conditions, in formation of graphene with 2-3 layers and high graphitic quality, as evidenced by Raman spectroscopy, with characteristic full width at half maximum of the 2D band of 49.46 cm-1, and I2D/IG and ID/IG intensity ratios of 1.15 and 0.26, respectively. Atomic force microscopy and X-ray photoelectron spectroscopy were employed to further evaluate graphene characteristics and enlighten growth mechanism. Electrochemical evaluation of the developed material was performed using cyclic voltammetry, electrochemical impedance spectroscopy, and galvanostatic charge-discharge measurements.

Tungsten resources of Brazil

USGS Publications Warehouse

White, Max Gregg

1974-01-01

Brazilian tungsten production, 85 percent of which is exported, comes almost entirely from scheelite-bearing tactites in northeast Brazil, and has reached an annual rate of about 2,000 metric tons (2,200 short tons) of scheelite concentrate with 70 percent WO3. Scheelite ore reserves, located principally in the State of Rio Grande do Norte, are estimated to be as high as 8,300,000 tons (9,100,000 short tons) containing 0.7 percent WO3. Minor deposits (or those about which only minimal information is available) of wolframite, with which some cassiterite is associated, are located in Sao Paulo, Santa Catarina, and Rio Grande do Sul. Both the scheelite and the wolframite deposits are considered . to be late Precambrian A (620 to 900 m.y.) or early Cambrian in age.

OEDGE modeling for the planned tungsten ring experiment on DIII-D

DOE PAGES

Elder, J. David; Stangeby, Peter C.; Abrams, Tyler W.; ...

2017-04-19

The OEDGE code is used to model tungsten erosion and transport for DIII-D experiments with toroidal rings of high-Z metal tiles. Such modeling is needed for both experimental and diagnostic design to have estimates of the expected core and edge tungsten density and to understand the various factors contributing to the uncertainties in these calculations. OEDGE simulations are performed using the planned experimental magnetic geometries and plasma conditions typical of both L-mode and inter-ELM H-mode discharges in DIII-D. OEDGE plasma reconstruction based on specific representative discharges for similar geometries is used to determine the plasma conditions applied to tungsten plasmamore » impurity simulations. We developed a new model for tungsten erosion in OEDGE which imports charge-state resolved carbon impurity fluxes and impact energies from a separate OEDGE run which models the carbon production, transport and deposition for the same plasma conditions as the tungsten simulations. Furthermore, these values are then used to calculate the gross tungsten physical sputtering due to carbon plasma impurities which is then added to any sputtering by deuterium ions; tungsten self-sputtering is also included. The code results are found to be dependent on the following factors: divertor geometry and closure, the choice of cross-field anomalous transport coefficients, divertor plasma conditions (affecting both tungsten source strength and transport), the choice of tungsten atomic physics data used in the model (in particular sviz(Te) for W-atoms), and the model of the carbon flux and energy used for 2 calculating the tungsten source due to sputtering. The core tungsten density is found to be of order 10 15 m -3 (excluding effects of any core transport barrier and with significant variability depending on the other factors mentioned) with density decaying into the scrape off layer.« less

OEDGE Modeling of Collector Probe measurements in L-mode from the DIII-D tungsten ring campaign

NASA Astrophysics Data System (ADS)

Elder, J. D.; Stangeby, P. C.; Unterberg, Z.; Donovan, D.; Wampler, W. R.; Watkins, J.; Abrams, T.; McLean, A. G.

2017-10-01

During the tungsten ring campaign on DIII-D, a collector probe system with multiple diameter, dual-facing collector rods was inserted into the far scrape off layer (SOL) near the outer midplane to measure the plasma tungsten content. For most probes more tungsten was observed on the side connected along field lines to the inner divertor, with the larger probes showing largest divertor-facing asymmetries The OEDGE code is used to model the tungsten erosion, transport and deposition. It has been enhanced with (i) a peripheral particle transport and deposition model to record the impurity content in the peripheral region outside the regular mesh, and (ii) a collector probe model. The OEDGE results approximately reproduce both the divertor-facing asymmetries and the radial decay of each collector probe profile. The effect of changing impurity transport assumptions and wall location are examined. The measured divertor-facing asymmetries imply a higher tungsten density in the plasma upstream of the probe; this was expected theoretically from the effect of the parallel ion temperature gradient force driving upstream transport of tungsten from the outer divertor and was also found in the code analysis. Work supported by the US Department of Energy under DE-FC02-04ER54698, DE-NA0003525, DE-AC05-00OR22725, and DE-AC52-07NA27344.