Characteristics of epitaxial garnets grown by CVD using single metal alloy sources. [Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Besser, P. J.; Hamilton, T. N.; Mee, J. E.; Stermer, R. L.

1974-01-01

Single metal alloys have been explored as the cation source in the chemical vapor deposition (CVD) of iron garnets. Growth of good quality single crystal garnet films containing as many as five different cations has been achieved over a wide range of deposition conditions. The relationship of film composition to alloy compositions and deposition conditions has been determined for several materials. By proper choice of the alloy composition and the deposition conditions, uncrazed deposits were grown on (111) gadolinium gallium garnet (GGG) substrates. Data on physical, magnetic and optical properties of representative films is presented and discussed.

One-dimensional surface-imprinted polymeric nanotubes for specific biorecognition by initiated chemical vapor deposition (iCVD).

PubMed

Ince, Gozde Ozaydin; Armagan, Efe; Erdogan, Hakan; Buyukserin, Fatih; Uzun, Lokman; Demirel, Gokhan

2013-07-24

Molecular imprinting is a powerful, generic, and cost-effective technique; however, challenges still remain related to the fabrication and development of these systems involving nonhomogeneous binding sites, insufficient template removing, incompatibility with aqueous media, low rebinding capacity, and slow mass transfer. The vapor-phase deposition of polymers is a unique technique because of the conformal nature of coating and offers new possibilities in a number of applications including sensors, microfluidics, coating, and bioaffinity platforms. Herein, we demonstrated a simple but versatile concept to generate one-dimensional surface-imprinted polymeric nanotubes within anodic aluminum oxide (AAO) membranes based on initiated chemical vapor deposition (iCVD) technique for biorecognition of immunoglobulin G (IgG). It is reported that the fabricated surface-imprinted nanotubes showed high binding capacity and significant specific recognition ability toward target molecules compared with the nonimprinted forms. Given its simplicity and universality, the iCVD method can offer new possibilities in the field of molecular imprinting.

Enhanced photoresponse characteristics of transistors using CVD-grown MoS2/WS2 heterostructures

NASA Astrophysics Data System (ADS)

Shan, Junjie; Li, Jinhua; Chu, Xueying; Xu, Mingze; Jin, Fangjun; Fang, Xuan; Wei, Zhipeng; Wang, Xiaohua

2018-06-01

Semiconductor heterostructures based on transition metal dichalcogenides provide a broad platform to research two-dimensional nanomaterials and design atomically thin devices for fundamental and applied interests. The MoS2/WS2 heterostructure was prepared on SiO2/Si substrate by chemical vapor deposition (CVD) in our research. And the optical properties of the heterostructure was characterized by Raman and photoluminescence (PL) spectroscopy. The similar 2 orders of magnitude decrease of PL intensity in MoS2/WS2 heterostructures was tested, which is attribute to the electrical and optical modulation effects are connected with the interfacial charge transfer between MoS2 and WS2 films. Using MoS2/WS2 heterostructure as channel material of the phototransistor, we demonstrated over 50 folds enhanced photoresponsivity of multilayer MoS2 field-effect transistor. The results indicate that the MoS2/WS2 films can be a promising heterostructure material to enhance the photoresponse characteristics of MoS2-based phototransistors.

A Review of Carbon Nanomaterials' Synthesis via the Chemical Vapor Deposition (CVD) Method.

PubMed

Manawi, Yehia M; Samara, Ayman; Al-Ansari, Tareq; Atieh, Muataz A

2018-05-17

Carbon nanomaterials have been extensively used in many applications owing to their unique thermal, electrical and mechanical properties. One of the prime challenges is the production of these nanomaterials on a large scale. This review paper summarizes the synthesis of various carbon nanomaterials via the chemical vapor deposition (CVD) method. These carbon nanomaterials include fullerenes, carbon nanotubes (CNTs), carbon nanofibers (CNFs), graphene, carbide-derived carbon (CDC), carbon nano-onion (CNO) and MXenes. Furthermore, current challenges in the synthesis and application of these nanomaterials are highlighted with suggested areas for future research.

A Review of Carbon Nanomaterials’ Synthesis via the Chemical Vapor Deposition (CVD) Method

PubMed Central

Manawi, Yehia M.; Samara, Ayman; Al-Ansari, Tareq; Atieh, Muataz A.

2018-01-01

Carbon nanomaterials have been extensively used in many applications owing to their unique thermal, electrical and mechanical properties. One of the prime challenges is the production of these nanomaterials on a large scale. This review paper summarizes the synthesis of various carbon nanomaterials via the chemical vapor deposition (CVD) method. These carbon nanomaterials include fullerenes, carbon nanotubes (CNTs), carbon nanofibers (CNFs), graphene, carbide-derived carbon (CDC), carbon nano-onion (CNO) and MXenes. Furthermore, current challenges in the synthesis and application of these nanomaterials are highlighted with suggested areas for future research. PMID:29772760

Physically Unclonable Cryptographic Primitives by Chemical Vapor Deposition of Layered MoS2.

PubMed

Alharbi, Abdullah; Armstrong, Darren; Alharbi, Somayah; Shahrjerdi, Davood

2017-12-26

Physically unclonable cryptographic primitives are promising for securing the rapidly growing number of electronic devices. Here, we introduce physically unclonable primitives from layered molybdenum disulfide (MoS 2 ) by leveraging the natural randomness of their island growth during chemical vapor deposition (CVD). We synthesize a MoS 2 monolayer film covered with speckles of multilayer islands, where the growth process is engineered for an optimal speckle density. Using the Clark-Evans test, we confirm that the distribution of islands on the film exhibits complete spatial randomness, hence indicating the growth of multilayer speckles is a spatial Poisson process. Such a property is highly desirable for constructing unpredictable cryptographic primitives. The security primitive is an array of 2048 pixels fabricated from this film. The complex structure of the pixels makes the physical duplication of the array impossible (i.e., physically unclonable). A unique optical response is generated by applying an optical stimulus to the structure. The basis for this unique response is the dependence of the photoemission on the number of MoS 2 layers, which by design is random throughout the film. Using a threshold value for the photoemission, we convert the optical response into binary cryptographic keys. We show that the proper selection of this threshold is crucial for maximizing combination randomness and that the optimal value of the threshold is linked directly to the growth process. This study reveals an opportunity for generating robust and versatile security primitives from layered transition metal dichalcogenides.

Simple Chemical Vapor Deposition Experiment

ERIC Educational Resources Information Center

Pedersen, Henrik

2014-01-01

Chemical vapor deposition (CVD) is a process commonly used for the synthesis of thin films for several important technological applications, for example, microelectronics, hard coatings, and smart windows. Unfortunately, the complexity and prohibitive cost of CVD equipment makes it seldom available for undergraduate chemistry students. Here, a…

Excitation intensity dependent photoluminescence of annealed two-dimensional MoS2 grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Kaplan, D.; Mills, K.; Lee, J.; Torrel, S.; Swaminathan, V.

2016-06-01

Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS2 grown by chemical vapor deposition (CVD) on SiO2/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150-250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappears for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS2 monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS2 monolayers can be leveraged for various device applications.

Chemical vapor deposition of mullite coatings

DOEpatents

Sarin, Vinod; Mulpuri, Rao

1998-01-01

This invention is directed to the creation of crystalline mullite coatings having uniform microstructure by chemical vapor deposition (CVD). The process comprises the steps of establishing a flow of reactants which will yield mullite in a CVD reactor, and depositing a crystalline coating from the reactant flow. The process will yield crystalline coatings which are dense and of uniform thickness.

Numerical modeling tools for chemical vapor deposition

NASA Technical Reports Server (NTRS)

Jasinski, Thomas J.; Childs, Edward P.

1992-01-01

Development of general numerical simulation tools for chemical vapor deposition (CVD) was the objective of this study. Physical models of important CVD phenomena were developed and implemented into the commercial computational fluid dynamics software FLUENT. The resulting software can address general geometries as well as the most important phenomena occurring with CVD reactors: fluid flow patterns, temperature and chemical species distribution, gas phase and surface deposition. The physical models are documented which are available and examples are provided of CVD simulation capabilities.

Why Chemical Vapor Deposition Grown MoS2 Samples Outperform Physical Vapor Deposition Samples: Time-Domain ab Initio Analysis.

PubMed

Li, Linqiu; Long, Run; Prezhdo, Oleg V

2018-06-13

Two-dimensional transition metal dichalcogenides (TMDs) have drawn strong attention due to their unique properties and diverse applications. However, TMD performance depends strongly on material quality and defect morphology. Experiments show that samples grown by chemical vapor deposition (CVD) outperform those obtained by physical vapor deposition (PVD). Experiments also show that CVD samples exhibit vacancy defects, while antisite defects are frequently observed in PVD samples. Our time-domain ab initio study demonstrates that both antisites and vacancies accelerate trapping and nonradiative recombination of charge carriers, but antisites are much more detrimental than vacancies. Antisites create deep traps for both electrons and holes, reducing energy gaps for recombination, while vacancies trap primarily holes. Antisites also perturb band-edge states, creating significant overlap with the trap states. In comparison, vacancy defects overlap much less with the band-edge states. Finally, antisites can create pairs of electron and hole traps close to the Fermi energy, allowing trapping by thermal activation from the ground state and strongly contributing to charge scattering. As a result, antisites accelerate charge recombination by more than a factor of 8, while vacancies enhance the recombination by less than a factor of 2. Our simulations demonstrate a general principle that missing atoms are significantly more benign than misplaced atoms, such as antisites and adatoms. The study rationalizes the existing experimental data, provides theoretical insights into the diverse behavior of different classes of defects, and generates guidelines for defect engineering to achieve high-performance electronic, optoelectronic, and solar-cell devices.

Water-Assisted Vapor Deposition of PEDOT Thin Film.

PubMed

Goktas, Hilal; Wang, Xiaoxue; Ugur, Asli; Gleason, Karen K

2015-07-01

The synthesis and characterization of poly(3,4-ethylenedioxythiophene) (PEDOT) using water-assisted vapor phase polymerization (VPP) and oxidative chemical vapor deposition (oCVD) are reported. For the VPP PEDOT, the oxidant, FeCl3 , is sublimated onto the substrate from a heated crucible in the reactor chamber and subsequently exposed to 3,4-ethylenedioxythiophene (EDOT) monomer and water vapor in the same reactor. The oCVD PEDOT was produced by introducing the oxidant, EDOT monomer, and water vapor simultaneously to the reactor. The enhancement of doping and crystallinity is observed in the water-assisted oCVD thin films. The high doping level observed at UV-vis-NIR spectra for the oCVD PEDOT, suggests that water acts as a solubilizing agent for oxidant and its byproducts. Although the VPP produced PEDOT thin films are fully amorphous, their conductivities are comparable with that of the oCVD produced ones. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

BiVO4 thin film photoanodes grown by chemical vapor deposition.

PubMed

Alarcón-Lladó, Esther; Chen, Le; Hettick, Mark; Mashouf, Neeka; Lin, Yongjing; Javey, Ali; Ager, Joel W

2014-01-28

BiVO4 thin film photoanodes were grown by vapor transport chemical deposition on FTO/glass substrates. By controlling the flow rate, the temperatures of the Bi and V sources (Bi metal and V2O5 powder, respectively), and the temperature of the deposition zone in a two-zone furnace, single-phase monoclinic BiVO4 thin films can be obtained. The CVD-grown films produce global AM1.5 photocurrent densities up to 1 mA cm(-2) in aqueous conditions in the presence of a sacrificial reagent. Front illuminated photocatalytic performance can be improved by inserting either a SnO2 hole blocking layer and/or a thin, extrinsically Mo doped BiVO4 layer between the FTO and the CVD-grown layer. The incident photon to current efficiency (IPCE), measured under front illumination, for BiVO4 grown directly on FTO/glass is about 10% for wavelengths below 450 nm at a bias of +0.6 V vs. Ag/AgCl. For BiVO4 grown on a 40 nm SnO2/20 nm Mo-doped BiVO4 back contact, the IPCE is increased to over 40% at wavelengths below 420 nm.

Excitation intensity dependent photoluminescence of annealed two-dimensional MoS{sub 2} grown by chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaplan, D.; Swaminathan, V.; Mills, K.

2016-06-07

Here, we present detailed results of Raman and photoluminescence (PL) characterization of monolayers of MoS{sub 2} grown by chemical vapor deposition (CVD) on SiO{sub 2}/Si substrates after thermal annealing at 150 °C, 200 °C, and 250 °C in an argon atmosphere. In comparison to the as-grown monolayers, annealing in the temperature range of 150–250 °C brings about significant changes in the band edge luminescence. It is observed that annealing at 150 °C gives rise to a 100-fold increase in the PL intensity and produces a strong band at 1.852 eV attributed to a free-to-bound transition that dominates over the band edge excitonic luminescence. This band disappearsmore » for the higher annealing temperatures. The improvement in PL after the 200 °C anneal is reduced in comparison to that obtained after the 150 °C anneal; this is suggested to arise from a decrease in the non-radiative lifetime caused by the creation of sulfur di-vacancies. Annealing at 250 °C degrades the PL in comparison to the as-grown sample because of the onset of disorder/decomposition of the sample. It is clear that the PL features of the CVD-grown MoS{sub 2} monolayer are profoundly affected by thermal annealing in Ar atmosphere. However, further detailed studies are needed to identify, unambiguously, the role of native defects and/or adsorbed species in defining the radiative channels in annealed samples so that the beneficial effect of improvement in the optical efficiency of the MoS{sub 2} monolayers can be leveraged for various device applications.« less

Electrical transport and low-frequency noise in chemical vapor deposited single-layer MoS2 devices.

PubMed

Sharma, Deepak; Amani, Matin; Motayed, Abhishek; Shah, Pankaj B; Birdwell, A Glen; Najmaei, Sina; Ajayan, Pulickel M; Lou, Jun; Dubey, Madan; Li, Qiliang; Davydov, Albert V

2014-04-18

We have studied temperature-dependent (77-300 K) electrical characteristics and low-frequency noise (LFN) in chemical vapor deposited (CVD) single-layer molybdenum disulfide (MoS2) based back-gated field-effect transistors (FETs). Electrical characterization and LFN measurements were conducted on MoS2 FETs with Al2O3 top-surface passivation. We also studied the effect of top-surface passivation etching on the electrical characteristics of the device. Significant decrease in channel current and transconductance was observed in these devices after the Al2O3 passivation etching. For passivated devices, the two-terminal resistance variation with temperature showed a good fit to the activation energy model, whereas for the etched devices the trend indicated a hopping transport mechanism. A significant increase in the normalized drain current noise power spectral density (PSD) was observed after the etching of the top passivation layer. The observed channel current noise was explained using a standard unified model incorporating carrier number fluctuation and correlated surface mobility fluctuation mechanisms. Detailed analysis of the gate-referred noise voltage PSD indicated the presence of different trapping states in passivated devices when compared to the etched devices. Etched devices showed weak temperature dependence of the channel current noise, whereas passivated devices exhibited near-linear temperature dependence.

Origins of Moiré Patterns in CVD-grown MoS2 Bilayer Structures at the Atomic Scales.

PubMed

Wang, Jin; Namburu, Raju; Dubey, Madan; Dongare, Avinash M

2018-06-21

The chemical vapor deposition (CVD)-grown two-dimensional molybdenum disulfide (MoS 2 ) structures comprise of flakes of few layers with different dimensions. The top layers are relatively smaller in size than the bottom layers, resulting in the formation of edges/steps across adjacent layers. The strain response of such few-layer terraced structures is therefore likely to be different from exfoliated few-layered structures with similar dimensions without any terraces. In this study, the strain response of CVD-grown few-layered MoS 2 terraced structures is investigated at the atomic scales using classic molecular dynamics (MD) simulations. MD simulations suggest that the strain relaxation of CVD-grown triangular terraced structures is observed in the vertical displacement of the atoms across the layers that results in the formation of Moiré patterns. The Moiré islands are observed to nucleate at the corners or edges of the few-layered structure and propagate inwards under both tensile and compressive strains. The nucleation of these islands is observed to happen at tensile strains of ~ 2% and at compressive strains of ~2.5%. The vertical displacements of the atoms and the dimensions of the Moiré islands predicted using the MD simulation are in excellent agreement with that observed experimentally.

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

Chemical vapor deposition of epitaxial silicon

DOEpatents

Berkman, Samuel

1984-01-01

A single chamber continuous chemical vapor deposition (CVD) reactor is described for depositing continuously on flat substrates, for example, epitaxial layers of semiconductor materials. The single chamber reactor is formed into three separate zones by baffles or tubes carrying chemical source material and a carrier gas in one gas stream and hydrogen gas in the other stream without interaction while the wafers are heated to deposition temperature. Diffusion of the two gas streams on heated wafers effects the epitaxial deposition in the intermediate zone and the wafers are cooled in the final zone by coolant gases. A CVD reactor for batch processing is also described embodying the deposition principles of the continuous reactor.

Initiated Chemical Vapor Deposition (iCVD) of Highly Cross-Linked Polymer Films for Advanced Lithium-Ion Battery Separators.

PubMed

Yoo, Youngmin; Kim, Byung Gon; Pak, Kwanyong; Han, Sung Jae; Song, Heon-Sik; Choi, Jang Wook; Im, Sung Gap

2015-08-26

We report an initiated chemical vapor deposition (iCVD) process to coat polyethylene (PE) separators in Li-ion batteries with a highly cross-linked, mechanically strong polymer, namely, polyhexavinyldisiloxane (pHVDS). The highly cross-linked but ultrathin pHVDS films can only be obtained by a vapor-phase process, because the pHVDS is insoluble in most solvents and thus infeasible with conventional solution-based methods. Moreover, even after the pHVDS coating, the initial porous structure of the separator is well preserved owing to the conformal vapor-phase deposition. The coating thickness is delicately controlled by deposition time to the level that the pore size decreases to below 7% compared to the original dimension. The pHVDS-coated PE shows substantially improved thermal stability and electrolyte wettability. After incubation at 140 °C for 30 min, the pHVDS-coated PE causes only a 12% areal shrinkage (versus 90% of the pristine separator). The superior wettability results in increased electrolyte uptake and ionic conductivity, leading to significantly improved rate performance. The current approach is applicable to a wide range of porous polymeric separators that suffer from thermal shrinkage and poor electrolyte wetting.

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

1976-01-01

The chemical vapor deposition (CVD) method for the growth of Si sheet on inexpensive substrate materials is investigated. The objective is to develop CVD techniques for producing large areas of Si sheet on inexpensive substrate materials, with sheet properties suitable for fabricating solar cells meeting the technical goals of the Low Cost Silicon Solar Array Project. Specific areas covered include: (1) modification and test of existing CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using standard and near-standard processing techniques.

Work function variation of MoS{sub 2} atomic layers grown with chemical vapor deposition: The effects of thickness and the adsorption of water/oxygen molecules

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kim, Jong Hun; Kim, Jae Hyeon; Park, Jeong Young, E-mail: peterlee@skku.edu, E-mail: jeongypark@kaist.ac.kr

2015-06-22

The electrical properties of two-dimensional atomic sheets exhibit remarkable dependences on layer thickness and surface chemistry. Here, we investigated the variation of the work function properties of MoS{sub 2} films prepared with chemical vapor deposition (CVD) on SiO{sub 2} substrates with the number of film layers. Wafer-scale CVD MoS{sub 2} films with 2, 4, and 12 layers were fabricated on SiO{sub 2}, and their properties were evaluated by using Raman and photoluminescence spectroscopies. In accordance with our X-ray photoelectron spectroscopy results, our Kelvin probe force microscopy investigation found that the surface potential of the MoS{sub 2} films increases by ∼0.15 eVmore » when the number of layers is increased from 2 to 12. Photoemission spectroscopy (PES) with in-situ annealing under ultra high vacuum conditions was used to directly demonstrate that this work function shift is associated with the screening effects of oxygen or water molecules adsorbed on the film surface. After annealing, it was found with PES that the surface potential decreases by ∼0.2 eV upon the removal of the adsorbed layers, which confirms that adsorbed species have a role in the variation in the work function.« less

Structural analysis of ion-implanted chemical-vapor-deposited diamond by transmission electron microscope

NASA Astrophysics Data System (ADS)

Jiang, N.; Deguchi, M.; Wang, C. L.; Won, J. H.; Jeon, H. M.; Mori, Y.; Hatta, A.; Kitabatake, M.; Ito, T.; Hirao, T.; Sasaki, T.; Hiraki, A.

1997-04-01

A transmission electron microscope (TEM) study of ion-implanted chemical-vapor-deposited (CVD) diamond is presented. CVD diamond used for transmission electron microscope observation was directly deposited onto Mo TEM grids. As-deposited specimens were irradiated by C (100 keV) ions at room temperature with a wide range of implantation doses (10 12-10 17/cm 2). Transmission electron diffraction (TED) patterns indicate that there exists a critical dose ( Dc) for the onset of amorphization of CVD diamond as a result of ion induced damage and the value of critical dose is confirmed to be about 3 × 10 15/cm 2. The ion-induced transformation process is clearly revealed by high resolution electron microscope (HREM) images. For a higher dose implantation (7 × 10 15/cm 2) a large amount of diamond phase is transformed into amorphous carbon and many tiny misoriented diamond blocks are found to be left in the amorphous solid. The average size of these misoriented diamond blocks is only about 1-2 nm. Further bombardment (10 17/cm 2) almost kills all of the diamond phase within the irradiated volume and moreover leads to local formation of micropolycrystalline graphite.

Chemical Vapor Deposition of Aluminum Oxide Thin Films

ERIC Educational Resources Information Center

Vohs, Jason K.; Bentz, Amy; Eleamos, Krystal; Poole, John; Fahlman, Bradley D.

2010-01-01

Chemical vapor deposition (CVD) is a process routinely used to produce thin films of materials via decomposition of volatile precursor molecules. Unfortunately, the equipment required for a conventional CVD experiment is not practical or affordable for many undergraduate chemistry laboratories, especially at smaller institutions. In an effort to…

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Campbell, A. G.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Shaw, G. L.; Simpson, W. I.; Yang, J. J.

1978-01-01

The objective was to investigate and develop chemical vapor deposition (CVD) techniques for the growth of large areas of Si sheet on inexpensive substrate materials, with resulting sheet properties suitable for fabricating solar cells that would meet the technical goals of the Low Cost Silicon Solar Array Project. The program involved six main technical tasks: (1) modification and test of an existing vertical-chamber CVD reactor system; (2) identification and/or development of suitable inexpensive substrate materials; (3) experimental investigation of CVD process parameters using various candidate substrate materials; (4) preparation of Si sheet samples for various special studies, including solar cell fabrication; (5) evaluation of the properties of the Si sheet material produced by the CVD process; and (6) fabrication and evaluation of experimental solar cell structures, using impurity diffusion and other standard and near-standard processing techniques supplemented late in the program by the in situ CVD growth of n(+)/p/p(+) sheet structures subsequently processed into experimental cells.

Chemical Vapor Deposition of High-Quality Large-Sized MoS2 Crystals on Silicon Dioxide Substrates.

PubMed

Chen, Jianyi; Tang, Wei; Tian, Bingbing; Liu, Bo; Zhao, Xiaoxu; Liu, Yanpeng; Ren, Tianhua; Liu, Wei; Geng, Dechao; Jeong, Hu Young; Shin, Hyeon Suk; Zhou, Wu; Loh, Kian Ping

2016-08-01

Large-sized MoS 2 crystals can be grown on SiO 2 /Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS 2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. The electron mobility of the MoS 2 crystals can reach ≈30 cm 2 V -1 s -1 , which is comparable to those of exfoliated flakes.

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

1976-01-01

A chemical vapor deposition (CVD) reactor system with a vertical deposition chamber was used for the growth of Si films on glass, glass-ceramic, and polycrystalline ceramic substrates. Silicon vapor was produced by pyrolysis of SiH4 in a H2 or He carrier gas. Preliminary deposition experiments with two of the available glasses were not encouraging. Moderately encouraging results, however, were obtained with fired polycrystalline alumina substrates, which were used for Si deposition at temperatures above 1,000 C. The surfaces of both the substrates and the films were characterized by X-ray diffraction, reflection electron diffraction, scanning electron microscopy optical microscopy, and surface profilometric techniques. Several experiments were conducted to establish baseline performance data for the reactor system, including temperature distributions on the sample pedestal, effects of carrier gas flow rate on temperature and film thickness, and Si film growth rate as a function of temperature.

Large Area CVD MoS2 RF transistors with GHz performance

NASA Astrophysics Data System (ADS)

Nagavalli Yogeesh, Maruthi; Sanne, Atresh; Park, Saungeun; Akinwade, Deji; Banerjee, Sanjay

Molybdenum disulfide (MoS2) is a 2D semiconductor in the family of transition metal dichalcogenides (TMDs). Its single layer direct bandgap of 1.8 eV allows for high ION/IOFF metal-oxide semiconducting field-effect transistors (FETs). More relevant for radio frequency (RF) wireless applications, theoretical studies predict MoS2 to have saturation velocities, vsat >3×106 cm/s. Facilitated by cm-scale CVD MoS2, here we design and fabricate both top-gated and embedded gate short channel MoS2 RF transistors, and provide a systematic comparison of channel length scaling, extrinsic doping from oxygen-deficient dielectrics, and a gate-first gate-last process flow. The intrinsic fT (fmax) obtained from the embedded gate transistors shows 3X (2X) improvement over top-gated CVD MoS2 RF FETs, and the largest high-field saturation velocity, vsat = 1.88 ×106 cm/s, in MoS2 reported so far. The gate-first approach, offers enhancement mode operation, ION/IOFF ratio of 10, 8< and the highest reported transconductance (gm) of 70 μS/ μm. By manipulating the interfacial oxygen vacancies in atomic layer deposited (ALD) HfO2-x we are able to achieve 2X current density over stoichiometric Al2O3. We demonstrate a common-source (CS) amplifier with voltage gain of 14 dB and an active frequency mixer with conversion gain of -15 dB. Our results of gigahertz frequency performance as well as analog circuit operation show that large area CVD MoS2 may be suitable for industrial-scale electronic applications.

Chemical vapor deposition of high-quality large-sized MoS 2 crystals on silicon dioxide substrates

DOE PAGES

Chen, Jianyi; Tang, Wei; Tian, Bingbing; ...

2016-03-31

Large-sized MoS 2 crystals can be grown on SiO 2/Si substrates via a two-stage chemical vapor deposition method. The maximum size of MoS 2 crystals can be up to about 305 μm. The growth method can be used to grow other transition metal dichalcogenide crystals and lateral heterojunctions. Additionally, the electron mobility of the MoS 2 crystals can reach ≈30 cm 2 V –1 s –1, which is comparable to those of exfoliated flakes.

Chemical vapor deposition modeling: An assessment of current status

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.

1991-01-01

The shortcomings of earlier approaches that assumed thermochemical equilibrium and used chemical vapor deposition (CVD) phase diagrams are pointed out. Significant advancements in predictive capabilities due to recent computational developments, especially those for deposition rates controlled by gas phase mass transport, are demonstrated. The importance of using the proper boundary conditions is stressed, and the availability and reliability of gas phase and surface chemical kinetic information are emphasized as the most limiting factors. Future directions for CVD are proposed on the basis of current needs for efficient and effective progress in CVD process design and optimization.

Advanced deposition model for thermal activated chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cai, Dang

Thermal Activated Chemical Vapor Deposition (TACVD) is defined as the formation of a stable solid product on a heated substrate surface from chemical reactions and/or dissociation of gaseous reactants in an activated environment. It has become an essential process for producing solid film, bulk material, coating, fibers, powders and monolithic components. Global market of CVD products has reached multi billions dollars for each year. In the recent years CVD process has been extensively used to manufacture semiconductors and other electronic components such as polysilicon, AlN and GaN. Extensive research effort has been directed to improve deposition quality and throughput. To obtain fast and high quality deposition, operational conditions such as temperature, pressure, fluid velocity and species concentration and geometry conditions such as source-substrate distance need to be well controlled in a CVD system. This thesis will focus on design of CVD processes through understanding the transport and reaction phenomena in the growth reactor. Since the in situ monitor is almost impossible for CVD reactor, many industrial resources have been expended to determine the optimum design by semi-empirical methods and trial-and-error procedures. This approach has allowed the achievement of improvements in the deposition sequence, but begins to show its limitations, as this method cannot always fulfill the more and more stringent specifications of the industry. To resolve this problem, numerical simulation is widely used in studying the growth techniques. The difficulty of numerical simulation of TACVD crystal growth process lies in the simulation of gas phase and surface reactions, especially the latter one, due to the fact that very limited kinetic information is available in the open literature. In this thesis, an advanced deposition model was developed to study the multi-component fluid flow, homogeneous gas phase reactions inside the reactor chamber, heterogeneous surface

Spectroscopic signatures of AA' and AB stacking of chemical vapor deposited bilayer MoS 2

DOE PAGES

Xia, Ming; Li, Bo; Yin, Kuibo; ...

2015-11-04

We discuss prominent resonance Raman and photoluminescence spectroscopic differences between AA'and AB stacked bilayer molybdenum disulfide (MoS 2) grown by chemical vapor deposition are reported. Bilayer MoS 2 islands consisting of the two stacking orders were obtained under identical growth conditions. Also, resonance Raman and photoluminescence spectra of AA' and AB stacked bilayer MoS 2 were obtained on Au nanopyramid surfaces under strong plasmon resonance. Both resonance Raman and photoluminescence spectra show distinct features indicating clear differences in interlayer interaction between these two phases. The implication of these findings on device applications based on spin and valley degrees of freedom.

Friction and Wear of Ion-Beam-Deposited Diamondlike Carbon on Chemical-Vapor-Deposited, Fine-Grain Diamond

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Wu, Richard L. C.; Lanter, William C.

1996-01-01

Friction and wear behavior of ion-beam-deposited diamondlike carbon (DLC) films coated on chemical-vapor-deposited (CVD), fine-grain diamond coatings were examined in ultrahigh vacuum, dry nitrogen, and humid air environments. The DLC films were produced by the direct impact of an ion beam (composed of a 3:17 mixture of Ar and CH4) at ion energies of 1500 and 700 eV and an RF power of 99 W. Sliding friction experiments were conducted with hemispherical CVD diamond pins sliding on four different carbon-base coating systems: DLC films on CVD diamond; DLC films on silicon; as-deposited, fine-grain CVD diamond; and carbon-ion-implanted, fine-grain CVD diamond on silicon. Results indicate that in ultrahigh vacuum the ion-beam-deposited DLC films on fine-grain CVD diamond (similar to the ion-implanted CVD diamond) greatly decrease both the friction and wear of fine-grain CVD diamond films and provide solid lubrication. In dry nitrogen and in humid air, ion-beam-deposited DLC films on fine-grain CVD diamond films also had a low steady-state coefficient of friction and a low wear rate. These tribological performance benefits, coupled with a wider range of coating thicknesses, led to longer endurance life and improved wear resistance for the DLC deposited on fine-grain CVD diamond in comparison to the ion-implanted diamond films. Thus, DLC deposited on fine-grain CVD diamond films can be an effective wear-resistant, lubricating coating regardless of environment.

Room temperature chemical vapor deposition of c-axis ZnO

NASA Astrophysics Data System (ADS)

Barnes, Teresa M.; Leaf, Jacquelyn; Fry, Cassandra; Wolden, Colin A.

2005-02-01

Highly (0 0 2) oriented ZnO films have been deposited at temperatures between 25 and 230 °C by high-vacuum plasma-assisted chemical vapor deposition (HVP-CVD) on glass and silicon substrates. The HVP-CVD process was found to be weakly activated with an apparent activation energy of ∼0.1 eV, allowing room temperature synthesis. Films deposited on both substrates displayed a preferential c-axis texture over the entire temperature range. Films grown on glass demonstrated high optical transparency throughout the visible and near infrared.

Metal Organic Chemical Vapor Deposition of Oxide Films for Advanced Applications

DTIC Science & Technology

2000-06-01

coatings , photovoltaics, touch sensitive controls, electromagnetic shielding (as found on microwave ovens and stealth fighters), static dissipaters, and so...depositing high quality films. The methods are physical vapor deposition ( PVD ), spin/mist deposition, (CVD), and alternating layer (AL) CVD. PVD ...PZT & SBT, YBa2Cu3O, CeO, InO, TCOs, Varistors Ta2O5 , ZrO, MnO, HfO, CeO, MnO, MgO SAW/microwave Silicon/: Si, SiGe, SiGeC, �. Opto-electronics

Thermal chemical vapor deposition (T-CVD) growth of carbon nanotubes on different metallic underlayers

NASA Astrophysics Data System (ADS)

Kim, S. M.; Gangloff, L.

2011-06-01

The synthesis of carbon nanotubes (CNTs) on various substrates by thermal chemical vapor deposition (T-CVD) (500-800 °C) is described. C 2H 2 (98% purity) is used as the carbon feedstock and the metallic underlayers, i.e., AlCu, Cu, Ag, Ta, and NiV are used. A crucial component is the insertion (or inclusion) of an Al layer between the metal and the catalyst, which then leads to the effective growth of CNTs. The types of CNTs (single or multi walled) could be dependent on the diameter of Al xO y nanoparticles that are formed during the annealing process. In situ mass spectroscopy reveals that the increase in CO 2 and H 2O with temperature, during the growth, could be correlated to the formation of longer CNTs (∼2 μm) on NiV and Ta due to their etching effects (i.e. C+CO 2→2CO and C+H 2O→CO+H 2).

Development of a Computational Chemical Vapor Deposition Model: Applications to Indium Nitride and Dicyanovinylaniline

NASA Technical Reports Server (NTRS)

Cardelino, Carlos

1999-01-01

A computational chemical vapor deposition (CVD) model is presented, that couples chemical reaction mechanisms with fluid dynamic simulations for vapor deposition experiments. The chemical properties of the systems under investigation are evaluated using quantum, molecular and statistical mechanics models. The fluid dynamic computations are performed using the CFD-ACE program, which can simulate multispecies transport, heat and mass transfer, gas phase chemistry, chemistry of adsorbed species, pulsed reactant flow and variable gravity conditions. Two experimental setups are being studied, in order to fabricate films of: (a) indium nitride (InN) from the gas or surface phase reaction of trimethylindium and ammonia; and (b) 4-(1,1)dicyanovinyl-dimethylaminoaniline (DCVA) by vapor deposition. Modeling of these setups requires knowledge of three groups of properties: thermodynamic properties (heat capacity), transport properties (diffusion, viscosity, and thermal conductivity), and kinetic properties (rate constants for all possible elementary chemical reactions). These properties are evaluated using computational methods whenever experimental data is not available for the species or for the elementary reactions. The chemical vapor deposition model is applied to InN and DCVA. Several possible InN mechanisms are proposed and analyzed. The CVD model simulations of InN show that the deposition rate of InN is more efficient when pulsing chemistry is used under conditions of high pressure and microgravity. An analysis of the chemical properties of DCVA show that DCVA dimers may form under certain conditions of physical vapor transport. CVD simulations of the DCVA system suggest that deposition of the DCVA dimer may play a small role in the film and crystal growth processes.

Chemical vapor deposition modeling for high temperature materials

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.

1992-01-01

The formalism for the accurate modeling of chemical vapor deposition (CVD) processes has matured based on the well established principles of transport phenomena and chemical kinetics in the gas phase and on surfaces. The utility and limitations of such models are discussed in practical applications for high temperature structural materials. Attention is drawn to the complexities and uncertainties in chemical kinetics. Traditional approaches based on only equilibrium thermochemistry and/or transport phenomena are defended as useful tools, within their validity, for engineering purposes. The role of modeling is discussed within the context of establishing the link between CVD process parameters and material microstructures/properties. It is argued that CVD modeling is an essential part of designing CVD equipment and controlling/optimizing CVD processes for the production and/or coating of high performance structural materials.

Charging effect at grain boundaries of MoS2

NASA Astrophysics Data System (ADS)

Yan, Chenhui; Dong, Xi; Li, Connie H.; Li, Lian

2018-05-01

Grain boundaries (GBs) are inherent extended defects in chemical vapor deposited (CVD) transition metal dichalcogenide (TMD) films. Characterization of the atomic structure and electronic properties of these GBs is crucial for understanding and controlling the properties of TMDs via defect engineering. Here, we report the atomic and electronic structure of GBs in CVD grown MoS2 on epitaxial graphene/SiC(0001). Using scanning tunneling microscopy/spectroscopy, we find that GBs mostly consist of arrays of dislocation cores, where the presence of mid-gap states shifts both conduction and valence band edges by up to 1 eV. Our findings demonstrate the first charging effect near GBs in CVD grown MoS2, providing insights into the significant impact GBs can have on materials properties.

Chemical Vapor Deposited Zinc Sulfide. SPIE Press Monograph

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCloy, John S.; Tustison, Randal W.

2013-04-22

Zinc sulfide has shown unequaled utility for infrared windows that require a combination of long-wavelength infrared transparency, mechanical durability, and elevated-temperature performance. This book reviews the physical properties of chemical vapor deposited ZnS and their relationship to the CVD process that produced them. An in-depth look at the material microstructure is included, along with a discussion of the material's optical properties. Finally, because the CVD process itself is central to the development of this material, a brief history is presented.

Deposition and micro electrical discharge machining of CVD-diamond layers incorporated with silicon

NASA Astrophysics Data System (ADS)

Kühn, R.; Berger, T.; Prieske, M.; Börner, R.; Hackert-Oschätzchen, M.; Zeidler, H.; Schubert, A.

2017-10-01

In metal forming, lubricants have to be used to prevent corrosion or to reduce friction and tool wear. From an economical and ecological point of view, the aim is to avoid the usage of lubricants. For dry deep drawing of aluminum sheets it is intended to apply locally micro-structured wear-resistant carbon based coatings onto steel tools. One type of these coatings are diamond layers prepared by chemical vapor deposition (CVD). Due to the high strength of diamond, milling processes are unsuitable for micro-structuring of these layers. In contrast to this, micro electrical discharge machining (micro EDM) is a suitable process for micro-structuring CVD-diamond layers. Due to its non-contact nature and its process principle of ablating material by melting and evaporating, it is independent of the hardness, brittleness or toughness of the workpiece material. In this study the deposition and micro electrical discharge machining of silicon incorporated CVD-diamond (Si-CVD-diamond) layers were presented. For this, 10 µm thick layers were deposited on molybdenum plates by a laser-induced plasma CVD process (LaPlas-CVD). For the characterization of the coatings RAMAN- and EDX-analyses were conducted. Experiments in EDM were carried out with a tungsten carbide tool electrode with a diameter of 90 µm to investigate the micro-structuring of Si-CVD-diamond. The impact of voltage, discharge energy and tool polarity on process speed and resulting erosion geometry were analyzed. The results show that micro EDM is a suitable technology for micro-structuring of silicon incorporated CVD-diamond layers.

Scalable high-mobility MoS2 thin films fabricated by an atmospheric pressure chemical vapor deposition process at ambient temperature

NASA Astrophysics Data System (ADS)

Huang, Chung-Che; Al-Saab, Feras; Wang, Yudong; Ou, Jun-Yu; Walker, John C.; Wang, Shuncai; Gholipour, Behrad; Simpson, Robert E.; Hewak, Daniel W.

2014-10-01

Nano-scale MoS2 thin films are successfully deposited on a variety of substrates by atmospheric pressure chemical vapor deposition (APCVD) at ambient temperature, followed by a two-step annealing process. These annealed MoS2 thin films are characterized with scanning electron microscopy (SEM), energy dispersive X-ray spectroscopy (EDX), micro-Raman, X-ray diffraction (XRD), transmission electron microscopy (TEM), UV-VIS-NIR spectrometry, photoluminescence (PL) and Hall Effect measurement. Key optical and electronic properties of APCVD grown MoS2 thin films are determined. This APCVD process is scalable and can be easily incorporated with conventional lithography as the deposition is taking place at room temperature. We also find that the substrate material plays a significant role in the crystalline structure formation during the annealing process and single crystalline MoS2 thin films can be achieved by using both c-plane ZnO and c-plane sapphire substrates. These APCVD grown nano-scale MoS2 thin films show great promise for nanoelectronic and optoelectronic applications.

Vapor Phase Deposition Using Plasma Spray-PVD™

NASA Astrophysics Data System (ADS)

von Niessen, K.; Gindrat, M.; Refke, A.

2010-01-01

Plasma spray—physical vapor deposition (PS-PVD) is a low pressure plasma spray technology to deposit coatings out of the vapor phase. PS-PVD is a part of the family of new hybrid processes recently developed by Sulzer Metco AG (Switzerland) on the basis of the well-established low pressure plasma spraying (LPPS) technology. Included in this new process family are plasma spray—chemical vapor deposition (PS-CVD) and plasma spray—thin film (PS-TF) processes. In comparison to conventional vacuum plasma spraying and LPPS, these new processes use a high energy plasma gun operated at a work pressure below 2 mbar. This leads to unconventional plasma jet characteristics which can be used to obtain specific and unique coatings. An important new feature of PS-PVD is the possibility to deposit a coating not only by melting the feed stock material which builds up a layer from liquid splats, but also by vaporizing the injected material. Therefore, the PS-PVD process fills the gap between the conventional PVD technologies and standard thermal spray processes. The possibility to vaporize feedstock material and to produce layers out of the vapor phase results in new and unique coating microstructures. The properties of such coatings are superior to those of thermal spray and EB-PVD coatings. This paper reports on the progress made at Sulzer Metco to develop functional coatings build up from vapor phase of oxide ceramics and metals.

Morphological Evolution of Vertically Standing Molybdenum Disulfide Nanosheets by Chemical Vapor Deposition.

PubMed

Zhang, Song; Liu, Jiajia; Ruiz, Karla Hernandez; Tu, Rong; Yang, Meijun; Li, Qizhong; Shi, Ji; Li, Haiwen; Zhang, Lianmeng; Goto, Takashi

2018-04-20

In this study, we demonstrated the chemical vapor deposition (CVD) of vertically standing molybdenum disulfide (MoS₂) nanosheets, with an unconventional combination of molybdenum hexacarbonyl (Mo(CO)₆) and 1,2-ethanedithiol (C₂H₆S₂) as the novel kind of Mo and S precursors respectively. The effect of the distance between the precursor’s outlet and substrates (denoted as d ) on the growth characteristics of MoS₂, including surface morphology and nanosheet structure, was investigated. Meanwhile, the relationship between the structure characteristics of MoS₂ nanosheets and their catalytic performance for hydrogen evolution reaction (HER) was elucidated. The formation of vertically standing nanosheets was analyzed and verified by means of an extrusion growth model. The crystallinity, average length, and average depth between peak and valley ( R z) of MoS₂ nanosheets differed depending on the spatial location of the substrate. Good crystalized MoS₂ nanosheets grown at d = 5.5 cm with the largest average length of 440 nm, and the highest R z of 162 nm contributed to a better HER performance, with a respective Tafel slope and exchange current density of 138.9 mV/decade, and 22.6 μA/cm² for raw data (127.8 mV/decade and 19.3 μA/cm² for iR-corrected data).

Initiated chemical vapor deposition polymers for high peak-power laser targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baxamusa, Salmaan H.; Lepro, Xavier; Lee, Tom

2016-12-05

Here, we report two examples of initiated chemical vapor deposition (iCVD) polymers being developed for use in laser targets for high peak-power laser systems. First, we show that iCVD poly(divinylbenzene) is more photo-oxidatively stable than the plasma polymers currently used in laser targets. Thick layers (10–12 μm) of this highly crosslinked polymer can be deposited with near-zero intrinsic film stress. Second, we show that iCVD epoxy polymers can be crosslinked after deposition to form thin adhesive layers for assembling precision laser targets. The bondlines can be made as thin as ~ 1 μm, approximately a factor of 2 thinner thanmore » achievable using viscous resin-based adhesives. These bonds can withstand downstream coining and stamping processes.« less

Chemical vapor deposition fluid flow simulation modelling tool

NASA Technical Reports Server (NTRS)

Bullister, Edward T.

1992-01-01

Accurate numerical simulation of chemical vapor deposition (CVD) processes requires a general purpose computational fluid dynamics package combined with specialized capabilities for high temperature chemistry. In this report, we describe the implementation of these specialized capabilities in the spectral element code NEKTON. The thermal expansion of the gases involved is shown to be accurately approximated by the low Mach number perturbation expansion of the incompressible Navier-Stokes equations. The radiative heat transfer between multiple interacting radiating surfaces is shown to be tractable using the method of Gebhart. The disparate rates of reaction and diffusion in CVD processes are calculated via a point-implicit time integration scheme. We demonstrate the use above capabilities on prototypical CVD applications.

Zinc doping of large-area MoS2 films via chemical vapor deposition

NASA Astrophysics Data System (ADS)

Xu, Enzhi; Liu, Haoming; Park, Kyungwha; Li, Zhen; Losovyj, Yaroslav; Starr, Matthew; Werbianskyj, Madilynn; Fertig, Herbert; Zhang, Shixiong

Atomically thin molybdenum disulfide (MoS2) has attracted significant attention because of its great potential for electronic and optoelectronic applications. Undoped MoS2 is n-type presumably due to the formation of native defects, and realizing p-type conduction has often turned out to be challenging. In this work, we report on the synthesis and characterizations of large-area Zn-doped MoS2 thin films in which the zinc dopant is demonstrated to be p-type. The films were grown by chemical vapor deposition and are monolayers or bilayers with a lateral dimension on the order of millimeters. The p-type nature of Zn dopants was evidenced by the suppression of n-type conduction and a downward shift of the Fermi level with doping. Density-functional-theory calculations were carried out to demonstrate the stability of the Zn dopants and to determine the impurity states. A p-type gate transfer characteristic was observed after the Zn-MoS2 film was thermally annealed in a sulfur atmosphere. This work is supported by the NSF through Grant Nos. DMR-1506460, DMR-1506263, and DMR-1206354, the San Diego Supercomputer Center (SDSC) Gordon under DMR060009N, and by the US-Israel Binational Science Foundation.

The vertical growth of MoS2 layers at the initial stage of CVD from first-principles

NASA Astrophysics Data System (ADS)

Xue, Xiong-Xiong; Feng, Yexin; Chen, Keqiu; Zhang, Lixin

2018-04-01

Chemical vapor deposition (CVD) is the highly preferred method for mass production of transition metal dichalcogenide (TMD) layers, yet the atomic-scale knowledge is still lacking about the nucleation and growth. In this study, by using first-principles calculations, we show that, on Au(111) surface, one-dimensional (1D) MoxSy chains are first formed by coalescing of smaller feeding species and are energetically favored at the early stage of nucleation. Two-dimensional (2D) layers can be stabilized only after the number of Mo atoms exceeds ˜12. A vertical growth mode is revealed which accomplishes the structural transformation from the 1D chains to the 2D layers for the clusters while growing. The competition between intralayer and interlayer interactions is the key. These findings serve as new insights for better understanding the atomistic mechanism of the nucleation and growth of TMDs on the surface.

Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes

DOEpatents

Tsuo, S.; Langford, A.A.

1989-03-28

Unwanted build-up of the film deposited on the transparent light-transmitting window of a photochemical vacuum deposition (photo-CVD) chamber is eliminated by flowing an etchant into the part of the photolysis region in the chamber immediately adjacent the window and remote from the substrate and from the process gas inlet. The respective flows of the etchant and the process gas are balanced to confine the etchant reaction to the part of the photolysis region proximate to the window and remote from the substrate. The etchant is preferably one that etches film deposit on the window, does not etch or affect the window itself, and does not produce reaction by-products that are deleterious to either the desired film deposited on the substrate or to the photolysis reaction adjacent the substrate. 3 figs.

Method and apparatus for removing and preventing window deposition during photochemical vapor deposition (photo-CVD) processes

DOEpatents

Tsuo, Simon; Langford, Alison A.

1989-01-01

Unwanted build-up of the film deposited on the transparent light-transmitting window of a photochemical vacuum deposition (photo-CVD) chamber is eliminated by flowing an etchant into the part of the photolysis region in the chamber immediately adjacent the window and remote from the substrate and from the process gas inlet. The respective flows of the etchant and the process gas are balanced to confine the etchant reaction to the part of the photolysis region proximate to the window and remote from the substrate. The etchant is preferably one that etches film deposit on the window, does not etch or affect the window itself, and does not produce reaction by-products that are deleterious to either the desired film deposited on the substrate or to the photolysis reaction adjacent the substrate.

Significance of vapor phase chemical reactions on CVD rates predicted by chemically frozen and local thermochemical equilibrium boundary layer theories

NASA Technical Reports Server (NTRS)

Gokoglu, Suleyman A.

1988-01-01

This paper investigates the role played by vapor-phase chemical reactions on CVD rates by comparing the results of two extreme theories developed to predict CVD mass transport rates in the absence of interfacial kinetic barrier: one based on chemically frozen boundary layer and the other based on local thermochemical equilibrium. Both theories consider laminar convective-diffusion boundary layers at high Reynolds numbers and include thermal (Soret) diffusion and variable property effects. As an example, Na2SO4 deposition was studied. It was found that gas phase reactions have no important role on Na2SO4 deposition rates and on the predictions of the theories. The implications of the predictions of the two theories to other CVD systems are discussed.

Study of Silicidation Process of Tungsten Catalyzer during Silicon Film Deposition in Catalytic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Honda, Kazuhiro; Ohdaira, Keisuke; Matsumura, Hideki

2008-05-01

In catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD, source gases are decomposed by catalytic cracking reactions with heated catalyzing metal wires. In the case of silicon (Si) film deposition, such metal wires are often converted to silicide, which shortens the lifetime of catalyzing wires. As a catalyzer, tungsten (W) is widely used. Thus, the process of silicidation of a W catalyzer at temperatures over 1650 °C, which is the temperature used in Cat-CVD for Si film deposition, was studied extensively in various experiments. It is found that two phases of tungsten-silicide, WSi2 and W5Si3, are formed at this temperature, and that the radiation emissivity of WSi2 is 1.2 to 1.7 times higher than that of W5Si3 and pure W. The increase of surface emissivity due to the formation of WSi2 decreases the catalyzer surface temperature which induces further growth of the tungsten-silicide layer. It is also found that the suppression of WSi2 formation by elevating catalyzer temperatures over 1750 °C is a key to extending the lifetime of the W catalyzer in Cat-CVD.

A kinetic and equilibrium analysis of silicon carbide chemical vapor deposition on monofilaments

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Kuczmarski, M. A.

1993-01-01

Chemical kinetics of atmospheric pressure silicon carbide (SiC) chemical vapor deposition (CVD) from dilute silane and propane source gases in hydrogen is numerically analyzed in a cylindrical upflow reactor designed for CVD on monofilaments. The chemical composition of the SiC deposit is assessed both from the calculated total fluxes of carbon and silicon and from chemical equilibrium considerations for the prevailing temperatures and species concentrations at and along the filament surface. The effects of gas and surface chemistry on the evolution of major gas phase species are considered in the analysis.

Charge transfer in crystalline germanium/monolayer MoS 2 heterostructures prepared by chemical vapor deposition

DOE PAGES

Lin, Yung-Chen; Bilgin, Ismail; Ahmed, Towfiq; ...

2016-09-21

Heterostructuring provides novel opportunities for exploring emergent phenomena and applications by developing designed properties beyond those of homogeneous materials. Advances in nanoscience enable the preparation of heterostructures formed incommensurate materials. Two-dimensional (2D) materials, such as graphene and transition metal dichalcogenides, are of particular interest due to their distinct physical characteristics. There have been recent changes in new research areas related to 2D/2D heterostructures. But, other heterostructures such as 2D/three-dimensional (3D) materials have not been thoroughly studied yet although the growth of 3D materials on 2D materials creating 2D/3D heterostructures with exceptional carrier transport properties has been reported. Here also wemore » report a novel heterostructure composed of Ge and monolayer MoS 2, prepared by chemical vapor deposition. A single crystalline Ge (110) thin film was grown on monolayer MoS 2. The electrical characteristics of Ge and MoS 2 in the Ge/MoS 2 heterostructure were remarkably different from those of isolated Ge and MoS 2. The field-effect conductivity type of the monolayer MoS 2 is converted from n-type to p-type by growth of the Ge thin film on top of it. Undoped Ge on MoS 2 is highly conducting. The observations can be explained by charge transfer in the heterostructure as opposed to chemical doping via the incorporation of impurities, based on our first-principles calculations.« less

Fabrication and investigation of the optoelectrical properties of MoS2/CdS heterojunction solar cells

PubMed Central

2014-01-01

Molybdenum disulfide (MoS2)/cadmium sulfide (CdS) heterojunction solar cells were successfully synthesized via chemical bath deposition (CBD) and chemical vapor deposition (CVD). The as-grown CdS film on a fluorine tin oxide (FTO) substrate deposited by CBD is continuous and compact. The MoS2 film deposited by CVD is homogeneous and continuous, with a uniform color and a thickness of approximately 10 nm. The optical absorption range of the MoS2/CdS heterojunction covers the visible and near-infrared spectral regions of 350 to 800 nm, which is beneficial for the improvement of solar cell efficiency. Moreover, the MoS2/CdS solar cell exhibits good current-voltage (I-V) characteristics and pronounced photovoltaic behavior, with an open-circuit voltage of 0.66 V and a short-circuit current density of 0.227 × 10-6 A/cm2, comparable to the results obtained from other MoS2-based solar cells. This research is critical to investigate more efficient and stable solar cells based on graphene-like materials in the future. PMID:25593552

Diagnostic Techniques Used to Study Chemical-Vapor-Deposited Diamond Films

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa

2000-01-01

The advantages and utility of chemical-vapor-deposited (CVD) diamond as an industrial ceramic can only be realized if the price and quality are right. Until recently, this technology was of interest only to the academic and basic research community. However, interest has grown because of advances made by leading CVD diamond suppliers: 1) Reduction of the cost of CVD polycrystalline diamond deposition below $5/carat ($8/sq cm); 2) Installation of production capacity; 3) Epitaxial growth of CVD single-crystal diamond. Thus, CVD diamond applications and business are an industrial reality. At present, CVD diamond is produced in the form of coatings or wafers. CVD diamond film technology offers a broader technological potential than do natural and high-pressure synthetic diamonds because size, geometry, and eventually cost will not be as limiting. Now that they are cost effective, diamond coatings - with their extreme properties - can be used in a variety of applications. Diamond coatings can improve many of the surface properties of engineering substrate materials, including erosion, corrosion, and wear resistance. Examples of actual and potential applications, from microelectromechanical systems to the wear parts of diamond coatings and related superhard coatings are described. For example, diamond coatings can be used as a chemical and mechanical barrier for the space shuttles check valves, particularly on the guide pins and seat assemblies.

Atmospheric pressure chemical vapor deposition: an alternative route to large-scale MoS2 and WS2 inorganic fullerene-like nanostructures and nanoflowers.

PubMed

Li, Xiao-Lin; Ge, Jian-Ping; Li, Ya-Dong

2004-11-19

Large-scale MoS2 and WS2 inorganic fullerene-like (IF) nanostructures (onionlike nanoparticles, nanotubes) and elegant three-dimensional nanoflowers (NF) have been selectively prepared through an atmospheric pressure chemical vapor deposition (APCVD) process with the reaction of chlorides and sulfur. The morphologies were controlled by adjusting the deposition position, the deposition temperature, and the flux of the carrier gas. All of the nanostructures have been characterized by X-ray powder diffraction (XRD), transmission electron microscopy (TEM), and scanning electron microscopy (SEM). A reaction mechanism is proposed based on the experimental results. The surface area of MoS2 IF nanoparticles and the field-emission effect of as-prepared WS2 nanoflowers is reported.

Normal and grazing incidence pulsed laser deposition of nanostructured MoSx hydrogen evolution catalysts from a MoS2 target

NASA Astrophysics Data System (ADS)

Fominski, V. Yu.; Romanov, R. I.; Fominski, D. V.; Dzhumaev, P. S.; Troyan, I. A.

2018-06-01

Pulsed laser ablation of a MoS2 target causes enhanced splashing of the material. So, for MoSx films obtained by pulsed laser deposition (PLD) in the conventional normal incidence (NI) configuration, their typical morphology is characterized by an underlying granular structure with an overlayer of widely dispersed spherical Mo and MoSx particles possessing micro-, sub-micro- and nanometer sizes. We investigated the possibility of using high surface roughness, which occurs due to particle deposition, as a support with a large exposed surface area for thin MoSx catalytic layers for the hydrogen evolution reaction (HER). For comparison, the HER performance of MoSx layers formed by grazing incidence (GI) PLD was studied. During GI-PLD, a substrate was placed along the direction of laser plume transport and few large particles loaded the substrate. The local structure and composition of thin MoSx layers formed by the deposition of the vapor component of the laser plume were varied by changing the pressure of the buffer gas (argon, Ar). In the case of NI-PLD, an increase in Ar pressure caused the formation of quasi-amorphous MoSx (x ≥ 2) films that possessed highly active catalytic sites on the edges of the layered MoS2 nanophase. At the same time, a decrease in the deposition rate of the MoSx film appeared due to the scattering of the vapor flux by Ar molecules during flux transport from the target to the substrate. This effect prevented uniform deposition of the MoSx catalytic film on the surface of most particles, whose deposition rate was independent of Ar pressure. The scattered vapor flux containing Mo and S atoms was a dominant source for MoSx film growth during GI-PLD. The thickness and composition distribution of the MoSx film on the substrate depended on both the pressure of the buffer gas and the distance from the target. For 1.0-2.5 cm from the target, the deposition rate was quite sufficient to form S-enriched quasi-amorphous MoSx (2.5 < x < 6) catalytic

A Comparative Study of Three Different Chemical Vapor Deposition (CVD) Techniques of Carbon Nanotube Growth on Diamond Films

DTIC Science & Technology

2013-01-01

FCT-CVD) with xylene and ferrocene liquid mixture without any prior catalyst deposition. T-CVD is a low cost system that can easily be set up to grow...iron catalysts, respectively. For the FCT-CVD approach, ferrocene is used as an iron source to promote CNT growth. Based on these repeatable results...kept at 250 ° C while the high temperature furnace is ramped up to the growth temperature of 750 ° C. Ferrocene was dissolved into xylene solvent in

Research on chemical vapor deposition processes for advanced ceramic coatings

NASA Technical Reports Server (NTRS)

Rosner, Daniel E.

1993-01-01

Our interdisciplinary background and fundamentally-oriented studies of the laws governing multi-component chemical vapor deposition (VD), particle deposition (PD), and their interactions, put the Yale University HTCRE Laboratory in a unique position to significantly advance the 'state-of-the-art' of chemical vapor deposition (CVD) R&D. With NASA-Lewis RC financial support, we initiated a program in March of 1988 that has led to the advances described in this report (Section 2) in predicting chemical vapor transport in high temperature systems relevant to the fabrication of refractory ceramic coatings for turbine engine components. This Final Report covers our principal results and activities for the total NASA grant of $190,000. over the 4.67 year period: 1 March 1988-1 November 1992. Since our methods and the technical details are contained in the publications listed (9 Abstracts are given as Appendices) our emphasis here is on broad conclusions/implications and administrative data, including personnel, talks, interactions with industry, and some known applications of our work.

Process for the preparation of fiber-reinforced ceramic composites by chemical vapor deposition

DOEpatents

Lackey, Jr., Walter J.; Caputo, Anthony J.

1986-01-01

A chemical vapor deposition (CVD) process for preparing fiber-reinforced ceramic composites. A specially designed apparatus provides a steep thermal gradient across the thickness of a fibrous preform. A flow of gaseous ceramic matrix material is directed into the fibrous preform at the cold surface. The deposition of the matrix occurs progressively from the hot surface of the fibrous preform toward the cold surface. Such deposition prevents the surface of the fibrous preform from becoming plugged. As a result thereof, the flow of reactant matrix gases into the uninfiltrated (undeposited) portion of the fibrous preform occurs throughout the deposition process. The progressive and continuous deposition of ceramic matrix within the fibrous preform provides for a significant reduction in process time over known chemical vapor deposition processes.

Chemical Vapor Deposition Growth of Degenerate p-Type Mo-Doped ReS2 Films and Their Homojunction.

PubMed

Qin, Jing-Kai; Shao, Wen-Zhu; Xu, Cheng-Yan; Li, Yang; Ren, Dan-Dan; Song, Xiao-Guo; Zhen, Liang

2017-05-10

Substitutional doping of transition metal dichalcogenide two-dimensional materials has proven to be effective in tuning their intrinsic properties, such as band gap, transport characteristics, and magnetism. In this study, we realized substitutional doping of monolayer rhenium disulfide (ReS 2 ) with Mo via chemical vapor deposition. Scanning transmission electron microscopy demonstrated that Mo atoms are successfully doped into ReS 2 by substitutionally replacing Re atoms in the lattice. Electrical measurements revealed the degenerate p-type semiconductor behavior of Mo-doped ReS 2 field effect transistors, in agreement with density functional theory calculations. The p-n diode device based on a doped ReS 2 and ReS 2 homojunction exhibited gate-tunable current rectification behaviors, and the maximum rectification ratio could reach up to 150 at V d = -2/+2 V. The successful synthesis of p-type ReS 2 in this study could largely promote its application in novel electronic and optoelectronic devices.

Towards a uniform and large-scale deposition of MoS2 nanosheets via sulfurization of ultra-thin Mo-based solid films.

PubMed

Vangelista, Silvia; Cinquanta, Eugenio; Martella, Christian; Alia, Mario; Longo, Massimo; Lamperti, Alessio; Mantovan, Roberto; Basset, Francesco Basso; Pezzoli, Fabio; Molle, Alessandro

2016-04-29

Large-scale integration of MoS2 in electronic devices requires the development of reliable and cost-effective deposition processes, leading to uniform MoS2 layers on a wafer scale. Here we report on the detailed study of the heterogeneous vapor-solid reaction between a pre-deposited molybdenum solid film and sulfur vapor, thus resulting in a controlled growth of MoS2 films onto SiO2/Si substrates with a tunable thickness and cm(2)-scale uniformity. Based on Raman spectroscopy and photoluminescence, we show that the degree of crystallinity in the MoS2 layers is dictated by the deposition temperature and thickness. In particular, the MoS2 structural disorder observed at low temperature (<750 °C) and low thickness (two layers) evolves to a more ordered crystalline structure at high temperature (1000 °C) and high thickness (four layers). From an atomic force microscopy investigation prior to and after sulfurization, this parametrical dependence is associated with the inherent granularity of the MoS2 nanosheet that is inherited by the pristine morphology of the pre-deposited Mo film. This work paves the way to a closer control of the synthesis of wafer-scale and atomically thin MoS2, potentially extendable to other transition metal dichalcogenides and hence targeting massive and high-volume production for electronic device manufacturing.

Electrically insulating films deposited on V-4%Cr-4%Ti by reactive CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, J.H.

1998-04-01

In the design of liquid-metal blankets for magnetic fusion reactors, corrosion resistance of structural materials and the magnetohydrodynamic forces and their influence on thermal hydraulics and corrosion are major concerns. Electrically insulating CaO films deposited on V-4%Cr-4%Ti exhibit high-ohmic insulator behavior even though a small amount of vanadium from the alloy become incorporated into the film. However, when vanadium concentration in the film is > 15 wt.%, the film becomes conductive. When the vanadium concentration is high in localized areas, a calcium vanadate phase that exhibits semiconductor behavior can form. The objective of this study is to evaluate electrically insulatingmore » films that were deposited on V-4%Cr-4%Ti by a reactive chemical vapor deposition (CVD) method. To this end, CaO and Ca-V-O coatings were produced on vanadium alloys by CVD and by a metallic-vapor process to investigate the electrical resistance of the coatings. The authors found that the Ca-V-O films exhibited insulator behavior when the ratio of calcium concentration to vanadium concentration R in the film > 0.9, and semiconductor or conductor behavior when R < 0.8. However, in some cases, semiconductor behavior was observed when CaO-coated samples with R > 0.98 were exposed in liquid lithium. Based on these studies, they conclude that semiconductor behavior occurs if a conductive calcium vanadate phase is present in localized regions in the CaO coating.« less

Oxidation of Chemically-Vapor-Deposited Silicon Carbide in Carbon Dioxide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Nguyen, QuynhGiao N.

1998-01-01

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 96 and 500 h at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic mechanisms are discussed. Passive oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants that are also found in combustion environments, oxygen and water vapor.

Comparison of tungsten films grown by CVD and hot-wire assisted atomic layer deposition in a cold-wall reactor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, Mengdi, E-mail: M.Yang@utwente.nl; Aarnink, Antonius A. I.; Kovalgin, Alexey Y.

2016-01-15

In this work, the authors developed hot-wire assisted atomic layer deposition (HWALD) to deposit tungsten (W) with a tungsten filament heated up to 1700–2000 °C. Atomic hydrogen (at-H) was generated by dissociation of molecular hydrogen (H{sub 2}), which reacted with WF{sub 6} at the substrate to deposit W. The growth behavior was monitored in real time by an in situ spectroscopic ellipsometer. In this work, the authors compare samples with tungsten grown by either HWALD or chemical vapor deposition (CVD) in terms of growth kinetics and properties. For CVD, the samples were made in a mixture of WF{sub 6} and molecularmore » or atomic hydrogen. Resistivity of the WF{sub 6}-H{sub 2} CVD layers was 20 μΩ·cm, whereas for the WF{sub 6}-at-H-CVD layers, it was 28 μΩ·cm. Interestingly, the resistivity was as high as 100 μΩ·cm for the HWALD films, although the tungsten films were 99% pure according to x-ray photoelectron spectroscopy. X-ray diffraction reveals that the HWALD W was crystallized as β-W, whereas both CVD films were in the α-W phase.« less

Photoinitiated chemical vapor deposition of cytocompatible poly(2-hydroxyethyl methacrylate) films.

PubMed

McMahon, Brian J; Pfluger, Courtney A; Sun, Bing; Ziemer, Katherine S; Burkey, Daniel D; Carrier, Rebecca L

2014-07-01

Poly(2-hydroxyethyl methacrylate) (pHEMA) is a widely utilized biomaterial due to lack of toxicity and suitable mechanical properties; conformal thin pHEMA films produced via chemical vapor deposition (CVD) would thus have broad biomedical applications. Thin films of pHEMA were deposited using photoinitiated CVD (piCVD). Incorporation of ethylene glycol diacrylate (EGDA) into the pHEMA polymer film as a crosslinker, confirmed via Fourier transform infrared spectroscopy and X-ray photoelectron spectroscopy, resulted in varied swelling and degradation behavior. 2-Hydroxyethyl methacrylate-only films showed significant thickness loss (up to 40%), possibly due to extraction of low-molecular-weight species or erosion, after 24 h in aqueous solution, whereas films crosslinked with EGDA (9.25-12.4%) were stable for up to 21 days. These results differ significantly from those obtained with plasma-polymerized pHEMA, which degraded steadily over a 21-day period, even with crosslinking. This suggests that the piCVD films differ structurally from those fabricated via plasma polymerization (plasma-enhanced CVD). piCVD pHEMA coatings proved to be good cell culture materials, with Caco-2 cell attachment and viability comparable to results obtained on tissue-culture polystyrene. Thus, thin film CVD pHEMA offers the advantage of enabling conformal coating of a cell culture substrate with tunable properties depending on method of preparation and incorporation of crosslinking agents. © 2013 Wiley Periodicals, Inc.

Anisotropic MoS2 Nanosheets Grown on Self-Organized Nanopatterned Substrates.

PubMed

Martella, Christian; Mennucci, Carlo; Cinquanta, Eugenio; Lamperti, Alessio; Cappelluti, Emmanuele; Buatier de Mongeot, Francesco; Molle, Alessandro

2017-05-01

Manipulating the anisotropy in 2D nanosheets is a promising way to tune or trigger functional properties at the nanoscale. Here, a novel approach is presented to introduce a one-directional anisotropy in MoS 2 nanosheets via chemical vapor deposition (CVD) onto rippled patterns prepared on ion-sputtered SiO 2 /Si substrates. The optoelectronic properties of MoS 2 are dramatically affected by the rippled MoS 2 morphology both at the macro- and the nanoscale. In particular, strongly anisotropic phonon modes are observed depending on the polarization orientation with respect to the ripple axis. Moreover, the rippled morphology induces localization of strain and charge doping at the nanoscale, thus causing substantial redshifts of the phonon mode frequencies and a topography-dependent modulation of the MoS 2 workfunction, respectively. This study paves the way to a controllable tuning of the anisotropy via substrate pattern engineering in CVD-grown 2D nanosheets. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Deposition of thermal and hot-wire chemical vapor deposition copper thin films on patterned substrates.

PubMed

Papadimitropoulos, G; Davazoglou, D

2011-09-01

In this work we study the hot-wire chemical vapor deposition (HWCVD) of copper films on blanket and patterned substrates at high filament temperatures. A vertical chemical vapor deposition reactor was used in which the chemical reactions were assisted by a tungsten filament heated at 650 degrees C. Hexafluoroacetylacetonate Cu(I) trimethylvinylsilane (CupraSelect) vapors were used, directly injected into the reactor with the aid of a liquid injection system using N2 as carrier gas. Copper thin films grown also by thermal and hot-wire CVD. The substrates used were oxidized silicon wafers on which trenches with dimensions of the order of 500 nm were formed and subsequently covered with LPCVD W. HWCVD copper thin films grown at filament temperature of 650 degrees C showed higher growth rates compared to the thermally ones. They also exhibited higher resistivities than thermal and HWCVD films grown at lower filament temperatures. Thermally grown Cu films have very uniform deposition leading to full coverage of the patterned substrates while the HWCVD films exhibited a tendency to vertical growth, thereby creating gaps and incomplete step coverage.

Backbone-Degradable Polymers Prepared by Chemical Vapor Deposition.

PubMed

Xie, Fan; Deng, Xiaopei; Kratzer, Domenic; Cheng, Kenneth C K; Friedmann, Christian; Qi, Shuhua; Solorio, Luis; Lahann, Joerg

2017-01-02

Polymers prepared by chemical vapor deposition (CVD) polymerization have found broad acceptance in research and industrial applications. However, their intrinsic lack of degradability has limited wider applicability in many areas, such as biomedical devices or regenerative medicine. Herein, we demonstrate, for the first time, a backbone-degradable polymer directly synthesized via CVD. The CVD co-polymerization of [2.2]para-cyclophanes with cyclic ketene acetals, specifically 5,6-benzo-2-methylene-1,3-dioxepane (BMDO), results in well-defined, hydrolytically degradable polymers, as confirmed by FTIR spectroscopy and ellipsometry. The degradation kinetics are dependent on the ratio of ketene acetals to [2.2]para-cyclophanes as well as the hydrophobicity of the films. These coatings address an unmet need in the biomedical polymer field, as they provide access to a wide range of reactive polymer coatings that combine interfacial multifunctionality with degradability. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

High rate chemical vapor deposition of carbon films using fluorinated gases

DOEpatents

Stafford, Byron L.; Tracy, C. Edwin; Benson, David K.; Nelson, Arthur J.

1993-01-01

A high rate, low-temperature deposition of amorphous carbon films is produced by PE-CVD in the presence of a fluorinated or other halide gas. The deposition can be performed at less than 100.degree. C., including ambient room temperature, with a radio frequency plasma assisted chemical vapor deposition process. With less than 6.5 atomic percent fluorine incorporated into the amorphous carbon film, the characteristics of the carbon film, including index of refraction, mass density, optical clarity, and chemical resistance are within fifteen percent (15%) of those characteristics for pure amorphous carbon films, but the deposition rates are high.

Optimal Magnetorheological Fluid for Finishing of Chemical-Vapor-Deposited Zinc Sulfide

NASA Astrophysics Data System (ADS)

Salzman, Sivan

Magnetorheological finishing (MRF) of polycrystalline, chemical-vapor- deposited zinc sulfide (ZnS) optics leaves visible surface artifacts known as "pebbles". These artifacts are a direct result of the material's inner structure that consists of cone-like features that grow larger (up to a few millimeters in size) as deposition takes place, and manifest on the top deposited surface as "pebbles". Polishing the pebble features from a CVD ZnS substrate to a flat, smooth surface to below 10 nm root-mean-square is challenging, especially for a non-destructive polishing process such as MRF. This work explores ways to improve the surface finish of CVD ZnS processed with MRF through modification of the magnetorheological (MR) fluid's properties. A materials science approach is presented to define the anisotropy of CVD ZnS through a combination of chemical and mechanical experiments and theoretical predictions. Magnetorheological finishing experiments with single crystal samples of ZnS, whose cuts and orientations represent most of the facets known to occur in the polycrystalline CVD ZnS, were performed to explore the influence of material anisotropy on the material removal rate during MRF. By adjusting the fluid's viscosity, abrasive type concentration, and pH to find the chemo-mechanical conditions that equalize removal rates among all single crystal facets during MRF, we established an optimized, novel MR formulation to polish CVD ZnS without degrading the surface finish of the optic.

Strain and structure heterogeneity in MoS 2 atomic layers grown by chemical vapour deposition

DOE PAGES

Liu, Zheng; Amani, Matin; Najmaei, Sina; ...

2014-11-18

Monolayer molybdenum disulfide (MoS 2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS 2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS 2. Recently, large-size monolayer MoS 2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS 2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS 2 and strain-induced band gap engineering. We also evaluatemore » the effective strain transferred from polymer substrates to MoS 2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS 2.« less

CVD Polymers for Devices and Device Fabrication.

PubMed

Wang, Minghui; Wang, Xiaoxue; Moni, Priya; Liu, Andong; Kim, Do Han; Jo, Won Jun; Sojoudi, Hossein; Gleason, Karen K

2017-03-01

Chemical vapor deposition (CVD) polymerization directly synthesizes organic thin films on a substrate from vapor phase reactants. Dielectric, semiconducting, electrically conducting, and ionically conducting CVD polymers have all been readily integrated into devices. The absence of solvent in the CVD process enables the growth of high-purity layers and avoids the potential of dewetting phenomena, which lead to pinhole defects. By limiting contaminants and defects, ultrathin (<10 nm) CVD polymeric device layers have been fabricated in multiple laboratories. The CVD method is particularly suitable for synthesizing insoluble conductive polymers, layers with high densities of organic functional groups, and robust crosslinked networks. Additionally, CVD polymers are prized for the ability to conformally cover rough surfaces, like those of paper and textile substrates, as well as the complex geometries of micro- and nanostructured devices. By employing low processing temperatures, CVD polymerization avoids damaging substrates and underlying device layers. This report discusses the mechanisms of the major CVD polymerization techniques and the recent progress of their applications in devices and device fabrication, with emphasis on initiated CVD (iCVD) and oxidative CVD (oCVD) polymerization. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Controllable Growth of Monolayer MoS2 and MoSe2 Crystals Using Three-temperature-zone Furnace

NASA Astrophysics Data System (ADS)

Zheng, Binjie; Chen, Yuanfu

2017-12-01

Monolayer molybdenum disulfide (MoS2) and molybdenum diselenide (MoSe2) have attracted a great attention for their exceptional electronic and optoelectronic properties among the two dimensional family. However, controllable synthesis of monolayer crystals with high quality needs to be improved urgently. Here we demonstrate a chemical vapor deposition (CVD) growth of monolayer MoS2 and MoSe2 crystals using three-temperature-zone furnace. Systematical study of the effects of growth pressure, temperature and time on the thickness, morphology and grain size of crystals shows the good controllability. The photoluminescence (PL) characterizations indicate that the as-grown monolayer MoS2 and MoSe2 crystals possess excellent optical qualities with very small full-width-half-maximum (FWHM) of 96 me V and 57 me V, respectively. It is comparable to that of exfoliated monolayers and reveals their high crystal quality. It is promising that our strategy should be applicable for the growth of other transition metal dichalcogenides (TMDs) monolayer crystals.

Growth-substrate induced performance degradation in chemically synthesized monolayer MoS{sub 2} field effect transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Amani, Matin; Chin, Matthew L.; Mazzoni, Alexander L.

2014-05-19

We report on the electronic transport properties of single-layer thick chemical vapor deposition (CVD) grown molybdenum disulfide (MoS{sub 2}) field-effect transistors (FETs) on Si/SiO{sub 2} substrates. MoS{sub 2} has been extensively investigated for the past two years as a potential semiconductor analogue to graphene. To date, MoS{sub 2} samples prepared via mechanical exfoliation have demonstrated field-effect mobility values which are significantly higher than that of CVD-grown MoS{sub 2}. In this study, we will show that the intrinsic electronic performance of CVD-grown MoS{sub 2} is equal or superior to that of exfoliated material and has been possibly masked by a combinationmore » of interfacial contamination on the growth substrate and residual tensile strain resulting from the high-temperature growth process. We are able to quantify this strain in the as-grown material using pre- and post-transfer metrology and microscopy of the same crystals. Moreover, temperature-dependent electrical measurements made on as-grown and transferred MoS{sub 2} devices following an identical fabrication process demonstrate the improvement in field-effect mobility.« less

Mixed Convection Flow in Horizontal CVD Reactors

NASA Astrophysics Data System (ADS)

Chiu, Wilson K. S.; Richards, Cristy J.; Jaluria, Yogesh

1998-11-01

Increasing demands for high quality films and production rates are challenging current Chemical Vapor Deposition (CVD) technology. Since film quality and deposition rates are strongly dependent on gas flow and heat transfer (W.K.S. Chiu and Y. Jaluria, ASME HTD-Vol. 347, pp. 293-311, 1997.), process improvement is obtained through the study of mixed convection flow and temperature distribution in a CVD reactor. Experimental results are presented for a CVD chamber with a horizontal or inclined resistance heated susceptor. Vaporized glycol solution illuminated by a light sheet is used for flow visualization. Temperature measurements are obtained by inserting thermocouple probes into the gas stream or embedding probes into the reactor walls. Flow visualization and temperature measurements show predominantly two dimensional flow and temperature distributions along the streamwise direction under forced convection conditions. Natural convection dominates under large heating rates and low flow rates. Over the range of parameters studied, several distinct flow regimes, characterized by instability, separation, and turbulence, are evident. Different flow regimes alter the flow pattern and temperature distribution, and in consequence, significantly modify deposition rates and uniformity.

Ultrahigh-mobility graphene devices from chemical vapor deposition on reusable copper

PubMed Central

Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Dauber, Jan; Oellers, Martin; Haupt, Federica; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

2015-01-01

Graphene research has prospered impressively in the past few years, and promising applications such as high-frequency transistors, magnetic field sensors, and flexible optoelectronics are just waiting for a scalable and cost-efficient fabrication technology to produce high-mobility graphene. Although significant progress has been made in chemical vapor deposition (CVD) and epitaxial growth of graphene, the carrier mobility obtained with these techniques is still significantly lower than what is achieved using exfoliated graphene. We show that the quality of CVD-grown graphene depends critically on the used transfer process, and we report on an advanced transfer technique that allows both reusing the copper substrate of the CVD growth and making devices with mobilities as high as 350,000 cm2 V–1 s–1, thus rivaling exfoliated graphene. PMID:26601221

Noncatalytic thermocouple coatings produced with chemical vapor deposition for flame temperature measurements.

PubMed

Bahlawane, N; Struckmeier, U; Kasper, T S; Osswald, P

2007-01-01

Chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD) have been employed to develop alumina thin films in order to protect thermocouples from catalytic overheating in flames and to minimize the intrusion presented to the combustion process. Alumina films obtained with a CVD process using AlCl(3) as the precursor are dense, not contaminated, and crystallize in the corundum structure, while MOCVD using Al(acetyl acetone)(3) allows the growth of corundum alumina with improved growth rates. These films, however, present a porous columnar structure and show some carbon contamination. Therefore, coated thermocouples using AlCl(3)-CVD were judged more suitable for flame temperature measurements and were tested in different fuels over a typical range of stoichiometries. Coated thermocouples exhibit satisfactory measurement reproducibility, no temporal drifts, and do not suffer from catalytic effects. Furthermore, their increased radiative heat loss (observed by infrared spectroscopy) allows temperature measurements over a wider range when compared to uncoated thermocouples. A flame with a well-known temperature profile established with laser-based techniques was used to determine the radiative heat loss correction to account for the difference between the apparent temperature measured by the coated thermocouple and the true flame temperature. The validity of the correction term was confirmed with temperature profile measurements for several flames previously studied in different laboratories with laser-based techniques.

Effects of etchants in the transfer of chemical vapor deposited graphene

NASA Astrophysics Data System (ADS)

Wang, M.; Yang, E. H.; Vajtai, R.; Kono, J.; Ajayan, P. M.

2018-05-01

The quality of graphene can be strongly modified during the transfer process following chemical vapor deposition (CVD) growth. Here, we transferred CVD-grown graphene from a copper foil to a SiO2/Si substrate using wet etching with four different etchants: HNO3, FeCl3, (NH4)2S2O8, and a commercial copper etchant. We then compared the quality of graphene after the transfer process in terms of surface modifications, pollutions (residues and contaminations), and electrical properties (mobility and density). Our tests and analyses showed that the commercial copper etchant provides the best structural integrity, the least amount of residues, and the smallest doping carrier concentration.

Intrinsic electrical transport and performance projections of synthetic monolayer MoS2 devices

NASA Astrophysics Data System (ADS)

Smithe, Kirby K. H.; English, Chris D.; Suryavanshi, Saurabh V.; Pop, Eric

2017-03-01

We demonstrate monolayer (1L) MoS2 grown by chemical vapor deposition (CVD) with transport properties comparable to those of the best exfoliated 1L devices over a wide range of carrier densities (up to ˜1013 cm-2) and temperatures (80-500 K). Transfer length measurements decouple the intrinsic material mobility from the contact resistance, at practical carrier densities (>1012 cm-2). We demonstrate the highest current density reported to date (˜270 μA μm-1 or 44 MA cm-2) at 300 K for an 80 nm long device from CVD-grown 1L MoS2. Using simulations, we discuss what improvements of 1L MoS2 are still required to meet technology roadmap requirements for low power and high performance applications. Such results are an important step towards large-area electronics based on 1L semiconductors.

Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe 2

DOE PAGES

Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan; ...

2017-05-18

Chemical vapor deposition (CVD) is one of the most promising, scalable synthetic techniques to enable large-area synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) for the realization of next generation optoelectronic devices. However, defects formed during the CVD growth process currently limit the quality and electronic properties of 2D TMDs. Effective synthesis and processing strategies to suppress defects and enhance the quality of 2D TMDs are urgently needed. In this work, isoelectrnic doping to produce stable alloy is presented as a new strategy to suppress defects and enhance photoluminescence (PL) in CVD-grown TMD monolayers. The random, isoelectronic substitution of Wmore » atoms for Mo atoms in CVD-grown monolayers of Mo 1-xW xSe 2 (02 monolayers. The resultant decrease in defect-medicated non-radiative recombination in the Mo 0.82W 0.18Se 2 monolayers yielded ~10 times more intense PL and extended the carrier lifetime by a factor of 3 compared to pristine CVD-grown MoSe 2 monolayers grown under similar conditions. Low temperatures (4 125 K) PL from defect-related localized states confirms theoretical predictions that isoelectronic W alloying should suppress deep levels in MoSe 2, showing that the defect levels in Mo 1-xW xSe 2 monolayers are higher in energy and quenched more quickly than in MoSe 2. Isoelectronic substitution therefore appears to be a promising synthetic method to control the heterogeneity of 2D TMDs to realize the scalable production of high performance optoelectronic and electronic devices.« less

Suppression of Defects and Deep Levels Using Isoelectronic Tungsten Substitution in Monolayer MoSe 2

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Puretzky, Alexander A.; Sang, Xiahan

Chemical vapor deposition (CVD) is one of the most promising, scalable synthetic techniques to enable large-area synthesis of two-dimensional (2D) transition metal dichalcogenides (TMDs) for the realization of next generation optoelectronic devices. However, defects formed during the CVD growth process currently limit the quality and electronic properties of 2D TMDs. Effective synthesis and processing strategies to suppress defects and enhance the quality of 2D TMDs are urgently needed. In this work, isoelectrnic doping to produce stable alloy is presented as a new strategy to suppress defects and enhance photoluminescence (PL) in CVD-grown TMD monolayers. The random, isoelectronic substitution of Wmore » atoms for Mo atoms in CVD-grown monolayers of Mo 1-xW xSe 2 (02 monolayers. The resultant decrease in defect-medicated non-radiative recombination in the Mo 0.82W 0.18Se 2 monolayers yielded ~10 times more intense PL and extended the carrier lifetime by a factor of 3 compared to pristine CVD-grown MoSe 2 monolayers grown under similar conditions. Low temperatures (4 125 K) PL from defect-related localized states confirms theoretical predictions that isoelectronic W alloying should suppress deep levels in MoSe 2, showing that the defect levels in Mo 1-xW xSe 2 monolayers are higher in energy and quenched more quickly than in MoSe 2. Isoelectronic substitution therefore appears to be a promising synthetic method to control the heterogeneity of 2D TMDs to realize the scalable production of high performance optoelectronic and electronic devices.« less

Wear Mechanism of Chemical Vapor Deposition (CVD) Carbide Insert in Orthogonal Cutting Ti-6Al-4V ELI at High Cutting Speed

NASA Astrophysics Data System (ADS)

Gusri, A. I.; Che Hassan, C. H.; Jaharah, A. G.

2011-01-01

The performance of Chemical Vapor Deposition (CVD) carbide insert with ISO designation of CCMT 12 04 04 LF, when turning titanium alloys was investigated. There were four layers of coating materials for this insert i.e.TiN-Al2O3-TiCN-TiN. The insert performance was evaluated based on the insert's edge resistant towards the machining parameters used at high cutting speed range of machining Ti-6Al-4V ELI. Detailed study on the wear mechanism at the cutting edge of CVD carbide tools was carried out at cutting speed of 55-95 m/min, feed rate of 0.15-0.35 mm/rev and depth of cut of 0.10-0.20 mm. Wear mechanisms such as abrasive and adhesive were observed on the flank face. Crater wear due to diffusion was also observed on the rake race. The abrasive wear occurred more at nose radius and the fracture on tool were found at the feed rate of 0.35 mm/rev and the depth of cut of 0.20 mm. The adhesion wear takes place after the removal of the coating or coating delaminating. Therefore, adhesion or welding of titanium alloy onto the flank and rake faces demonstrates a strong bond at the workpiece-tool interface.

Mechanical properties of ultrahigh molecular weight PHEMA hydrogels synthesized using initiated chemical vapor deposition.

PubMed

Bose, Ranjita K; Lau, Kenneth K S

2010-08-09

In this work, poly(2-hydroxyethyl methacrylate) (PHEMA), a widely used hydrogel, is synthesized using initiated chemical vapor deposition (iCVD), a one-step surface polymerization that does not use any solvents. iCVD synthesis is capable of producing linear stoichiometric polymers that are free from entrained unreacted monomer or solvent and, thus, do not require additional purification steps. The resulting films, therefore, are found to be noncytotoxic and also have low nonspecific protein adsorption. The kinetics of iCVD polymerization are tuned so as to achieve rapid deposition rates ( approximately 1.5 microm/min), which in turn yield ultrahigh molecular weight polymer films that are mechanically robust with good water transport and swellability. The films have an extremely high degree of physical chain entanglement giving rise to high tensile modulus and storage modulus without the need for chemical cross-linking that compromises hydrophilicity.

Exploration of plasma-enhanced chemical vapor deposition as a method for thin-film fabrication with biological applications.

PubMed

Vasudev, Milana C; Anderson, Kyle D; Bunning, Timothy J; Tsukruk, Vladimir V; Naik, Rajesh R

2013-05-22

Chemical vapor deposition (CVD) has been used historically for the fabrication of thin films composed of inorganic materials. But the advent of specialized techniques such as plasma-enhanced chemical vapor deposition (PECVD) has extended this deposition technique to various monomers. More specifically, the deposition of polymers of responsive materials, biocompatible polymers, and biomaterials has made PECVD attractive for the integration of biotic and abiotic systems. This review focuses on the mechanisms of thin-film growth using low-pressure PECVD and current applications of classic PECVD thin films of organic and inorganic materials in biological environments. The last part of the review explores the novel application of low-pressure PECVD in the deposition of biological materials.

Origin of the relatively low transport mobility of graphene grown through chemical vapor deposition

PubMed Central

Song, H. S.; Li, S. L.; Miyazaki, H.; Sato, S.; Hayashi, K.; Yamada, A.; Yokoyama, N.; Tsukagoshi, K.

2012-01-01

The reasons for the relatively low transport mobility of graphene grown through chemical vapor deposition (CVD-G), which include point defect, surface contamination, and line defect, were analyzed in the current study. A series of control experiments demonstrated that the determinant factor for the low transport mobility of CVD-G did not arise from point defects or surface contaminations, but stemmed from line defects induced by grain boundaries. Electron microscopies characterized the presence of grain boundaries and indicated the polycrystalline nature of the CVD-G. Field-effect transistors based on CVD-G without the grain boundary obtained a transport mobility comparative to that of Kish graphene, which directly indicated the detrimental effect of grain boundaries. The effect of grain boundary on transport mobility was qualitatively explained using a potential barrier model. Furthermore, the conduction mechanism of CVD-G was also investigated using the temperature dependence measurements. This study can help understand the intrinsic transport features of CVD-G. PMID:22468224

Chemical vapor deposition growth of two-dimensional heterojunctions

NASA Astrophysics Data System (ADS)

Cui, Yu; Li, Bo; Li, JingBo; Wei, ZhongMing

2018-01-01

The properties of two-dimensional (2D) layered materials with atom-smooth surface and special interlayer van der Waals coupling are different from those of traditional materials. Due to the absence of dangling bonds from the clean surface of 2D layered materials, the lattice mismatch influences slightly on the growth of 2D heterojunctions, thus providing a flexible design strategy. 2D heterojunctions have attracted extensive attention because of their excellent performance in optoelectronics, spintronics, and valleytronics. The transfer method was utilized for the fabrication of 2D heterojunctions during the early stage of fundamental research on these materials. This method, however, has limited practical applications. Therefore, chemical vapor deposition (CVD) method was recently developed and applied for the preparation of 2D heterojunctions. The CVD method is a naturally down-top growth strategy that yields 2D heterojunctions with sharp interfaces. Moreover, this method effectively reduces the introduction of contaminants to the fabricated heterojunctions. Nevertheless, the CVD-growth method is sensitive to variations in growth conditions. In this review article, we attempt to provide a comprehensive overview of the influence of growth conditions on the fabrication of 2D heterojunctions through the direct CVD method. We believe that elucidating the effects of growth conditions on the CVD method is necessary to help control and improve the efficiency of the large-scale fabrication of 2D heterojunctions for future applications in integrated circuits.

Characterization of atomic-layer MoS2 synthesized using a hot filament chemical vapor deposition method

NASA Astrophysics Data System (ADS)

Ying-Zi, Peng; Yang, Song; Xiao-Qiang, Xie; Yuan, Li; Zheng-Hong, Qian; Ru, Bai

2016-05-01

Atomic-layer MoS2 ultrathin films are synthesized using a hot filament chemical vapor deposition method. A combination of atomic force microscopy (AFM), x-ray diffraction (XRD), high-resolution transition electron microscopy (HRTEM), photoluminescence (PL), and x-ray photoelectron spectroscopy (XPS) characterization methods is applied to investigate the crystal structures, valence states, and compositions of the ultrathin film areas. The nucleation particles show irregular morphology, while for a larger size somewhere, the films are granular and the grains have a triangle shape. The films grow in a preferred orientation (002). The HRTEM images present the graphene-like structure of stacked layers with low density of stacking fault, and the interlayer distance of plane is measured to be about 0.63 nm. It shows a clear quasi-honeycomb-like structure and 6-fold coordination symmetry. Room-temperature PL spectra for the atomic layer MoS2 under the condition of right and left circular light show that for both cases, the A1 and B1 direct excitonic transitions can be observed. In the meantime, valley polarization resolved PL spectra are obtained. XPS measurements provide high-purity samples aside from some contaminations from the air, and confirm the presence of pure MoS2. The stoichiometric mole ratio of S/Mo is about 2.0-2.1, suggesting that sulfur is abundant rather than deficient in the atomic layer MoS2 under our experimental conditions. Project supported by the Natural Science Foundation of Zhejiang Province, China (Grant Nos. LY16F040003 and LY16A040007) and the National Natural Science Foundation of China (Grant Nos. 51401069 and 11574067).

Thermodynamic Analysis and Growth of Zirconium Carbide by Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Wei, Sun; Hua, Hao Zheng; Xiang, Xiong

Equilibrium calculations were used to optimize conditions for the chemical vapor deposition of zirconium carbide from zirconium halide + CxHy+H2+Ar system. The results show the CVD-ZrC phase diagram is divided into ZrC+C, ZrC and ZrC+Zr zones by C, Zr generating lines. For the same mole of ZrCl4 reactant, it needs higher concentration of CH4 to generate single ZrC phase than that of C3H6. Using these calculations as a guide, single-phase cubic zirconium carbide coatings were deposited onto graphite substrate.

Formation of Aluminide Coatings on Fe-Based Alloys by Chemical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Zhang, Ying; Pint, Bruce A; Cooley, Kevin M

2008-01-01

Aluminide and Al-containing coatings were synthesized on commercial ferritic (P91) and austenitic (304L) alloys via a laboratory chemical vapor deposition (CVD) procedure for rigorous control over coating composition, purity and microstructure. The effect of the CVD aluminizing parameters such as temperature, Al activity, and post-aluminizing anneal on coating growth was investigated. Two procedures involving different Al activities were employed with and without including Cr-Al pellets in the CVD reactor to produce coatings with suitable thickness and composition for coating performance evaluation. The phase constitution of the as-synthesized coatings was assessed with the aid of a combination of X-ray diffraction, electronmore » probe microanalysis, and existing phase diagrams. The mechanisms of formation of these CVD coatings on the Fe-based alloys are discussed, and compared with nickel aluminide coatings on Ni-base superalloys. In addition, Cr-Al pellets were replaced with Fe-Al metals in some aluminizing process runs and similar coatings were achieved.« less

CVD Diamond, DLC, and c-BN Coatings for Solid Film Lubrication

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Miyake, Shojiro; Wu, Richard L. C.

1998-01-01

The main criteria for judging coating performance were coefficient of friction and wear rate, which had to be less than 0.1 and 10(exp -6) cubic MM /(N*m), respectively. Carbon- and nitrogen-ion-implanted, fine-grain, chemical-vapor-deposited (CVD) diamond and diamondlike carbon (DLC) ion beam deposited on fine-grain CVD diamond met the criteria regardless of environment (vacuum, nitrogen, and air).

Chemical Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Larkin, David J.; Matus, Lawrence G.; Petit, Jeremy B.

1993-01-01

Large single-crystal SiC boules from which wafers of large area cut now being produced commerically. Availability of wafers opens door for development of SiC semiconductor devices. Recently developed chemical vapor deposition (CVD) process produces thin single-crystal SiC films on SiC wafers. Essential step in sequence of steps used to fabricate semiconductor devices. Further development required for specific devices. Some potential high-temperature applications include sensors and control electronics for advanced turbine engines and automobile engines, power electronics for electromechanical actuators for advanced aircraft and for space power systems, and equipment used in drilling of deep wells. High-frequency applications include communication systems, high-speed computers, and microwave power transistors. High-radiation applications include sensors and controls for nuclear reactors.

Effects of hydrogen on the structural and optical properties of MoSe2 grown by hot filament chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wang, B. B.; Zhu, M. K.; Levchenko, I.; Zheng, K.; Gao, B.; Xu, S.; Ostrikov, K.

2017-10-01

The role of reactive environment and hydrogen specifically in growth and structure of molybdenum selenide (MoSe2) nanomaterials is presently debated, and it is not clear whether hydrogen can promote the growth of MoSe2 sheets and alter their electronic properties. To find efficient, convenient methods for controlling the nucleation, growth and resultant properties of MoSe2 nanomaterials, MoSe2 nanoflakes were synthesized on silicon substrates by hot filament chemical vapor deposition using molybdenum trioxide and selenium powders in pure hydrogen, nitrogen gases and hydrogen-nitrogen mixtures. The structures and composition of synthesized MoSe2 nanoflakes were studied using the advanced characterization instruments including field emission scanning electron microscopy, micro-Raman spectroscopy, X-ray photoelectron spectroscopy, transmission electron microscopy and energy dispersive X-ray spectrometry. The analysis of the growth process indicates that hydrogen can improve the formation of MoSe2 nanoflakes and significantly alter their properties due to the high reduction capacity of hydrogen and the creation of more nucleation centers of MoSe2 nanoflakes on the silicon surface. The study of photoluminescent (PL) properties reveals that the MoSe2 nanoflakes can generate a strong PL band at about 631 nm, differently from the plain MoSe2 nanoflakes. The major difference in the PL properties may be related to the edges of MoSe2 nanoflakes. These results can be used to control the growth and structure of MoSe2-based nanomaterials and contribute to the development of advanced MoSe2-based optoelectronic devices.

Reducing flicker noise in chemical vapor deposition graphene field-effect transistors

NASA Astrophysics Data System (ADS)

Arnold, Heather N.; Sangwan, Vinod K.; Schmucker, Scott W.; Cress, Cory D.; Luck, Kyle A.; Friedman, Adam L.; Robinson, Jeremy T.; Marks, Tobin J.; Hersam, Mark C.

2016-02-01

Single-layer graphene derived from chemical vapor deposition (CVD) holds promise for scalable radio frequency (RF) electronic applications. However, prevalent low-frequency flicker noise (1/f noise) in CVD graphene field-effect transistors is often up-converted to higher frequencies, thus limiting RF device performance. Here, we achieve an order of magnitude reduction in 1/f noise in field-effect transistors based on CVD graphene transferred onto silicon oxide substrates by utilizing a processing protocol that avoids aqueous chemistry after graphene transfer. Correspondingly, the normalized noise spectral density (10-7-10-8 μm2 Hz-1) and noise amplitude (4 × 10-8-10-7) in these devices are comparable to those of exfoliated and suspended graphene. We attribute the reduction in 1/f noise to a decrease in the contribution of fluctuations in the scattering cross-sections of carriers arising from dynamic redistribution of interfacial disorder.

Chemical vapor deposition of yttria-stabilized zirconia as a thermal barrier coating for gas turbine engines

NASA Astrophysics Data System (ADS)

Varanasi, Venu Gopal

The gas turbine engine uses an yttria-stabilized zirconia (YSZ) coating to provide thermal insulation for its turbine blades. This YSZ coating must be tetragonal in crystal structure, columnar in microstructure, and be 100--250 mum thick to provide for adequate protection for the turbine blades in the severe engine environment. Currently, YSZ coatings are fabricated by electron-beam physical vapor deposition (EB-PVD), but this fabrication method is cost intensive. Chemical vapor deposition (CVD) is a more commercially viable processing method and a possible alternative to EB-PVD. The deposition of tetragonal YSZ from gaseous metal and oxidation sources were studied. A chemical equilibrium analysis modeled the feasibility of depositing tetragonal YSZ for both chloride CVD (Zr-Y-C-O-Cl-H-Inert system) and metal-organic CVD (MOCVD) (Zr-Y-C-O-H system). Pure thermochemical properties and the assessed YSZ phase diagram were used in this analysis. Using the molar input of metals ((nY + nZr) and ( nY/(nY + nZr ) = 0.08)) as bases, equilibrium calculations showed that tetragonal YSZ formation was feasible. Tetragonal YSZ formation was feasible with high oxygen content (nO/(nY + nZr) > 8) and high temperature (T > 100°C) in the case of chloride CVD (Zr-Y-C-O-Cl-H-Inert). Tetragonal YSZ formation was feasible with high oxygen content (nO/( nY + nZr) > 5) and high temperature (T > 950°C) in the case of MOCVD (Zr-Y-C-O-H). Although solid carbon formation did not appear in chloride CVD, additional oxygen (nO/( nY + nZr) > 32) and low hydrogen content relative to carbon (nH/nC < 2) were required to avoid solid carbon formation in MOCVD. Coatings were deposited using a set of base conditions derived from the chemical equilibrium analysis. In chloride CVD, YCl3 was not included because of its low vapor pressure, thus, ZrCl4 was oxidized with the H2-CO2 gas mixture. Monoclinic ZrO2 coatings were deposited at the thermochemically optimized conditions (n O/(nY + nZr) > 8, T > 1004�

Plasma-assisted synthesis of MoS2

NASA Astrophysics Data System (ADS)

Campbell, Philip M.; Perini, Christopher J.; Chiu, Johannes; Gupta, Atul; Ray, Hunter S.; Chen, Hang; Wenzel, Kevin; Snyder, Eric; Wagner, Brent K.; Ready, Jud; Vogel, Eric M.

2018-03-01

There has been significant interest in transition metal dichalcogenides (TMDs), including MoS2, in recent years due to their potential application in novel electronic and optical devices. While synthesis methods have been developed for large-area films of MoS2, many of these techniques require synthesis temperatures of 800 °C or higher. As a result of the thermal budget, direct synthesis requiring high temperatures is incompatible with many integrated circuit processes as well as flexible substrates. This work explores several methods of plasma-assisted synthesis of MoS2 as a way to lower the synthesis temperature. The first approach used is conversion of a naturally oxidized molybdenum thin film to MoS2 using H2S plasma. Conversion is demonstrated at temperatures as low as 400 °C, and the conversion is enabled by hydrogen radicals which reduce the oxidized molybdenum films. The second method is a vapor phase reaction incorporating thermally evaporated MoO3 exposed to a direct H2S plasma, similar to chemical vapor deposition (CVD) synthesis of MoS2. Synthesis at 400 °C results in formation of super-stoichiometric MoS2 in a beam-interrupted growth process. A final growth method relies on a cyclical process in which a small amount of Mo is sputtered onto the substrate and is subsequently sulfurized in a H2S plasma. Similar results could be realized using an atomic layer deposition (ALD) process to deposit the Mo film. Compared to high temperature synthesis methods, the lower temperature samples are lower quality, potentially due to poor crystallinity or higher defect density in the films. Temperature-dependent conductivity measurements are consistent with hopping conduction in the plasma-assisted synthetic MoS2, suggesting a high degree of disorder in the low-temperature films. Optimization of the plasma-assisted synthesis process for slower growth rate and better stoichiometry is expected to lead to high quality films at low growth temperature.

Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Utama, M. Iqbal Bakti; Lu, Xin; Zhan, Da; Ha, Son Tung; Yuan, Yanwen; Shen, Zexiang; Xiong, Qihua

2014-10-01

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate

Wear Mechanism of Chemical Vapor Deposition (CVD) Carbide Insert in Orthogonal Cutting Ti-6Al-4V ELI at High Cutting Speed

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gusri, A. I.; Che Hassan, C. H.; Jaharah, A. G.

2011-01-17

The performance of Chemical Vapor Deposition (CVD) carbide insert with ISO designation of CCMT 12 04 04 LF, when turning titanium alloys was investigated. There were four layers of coating materials for this insert i.e.TiN-Al2O3-TiCN-TiN. The insert performance was evaluated based on the insert's edge resistant towards the machining parameters used at high cutting speed range of machining Ti-6Al-4V ELI. Detailed study on the wear mechanism at the cutting edge of CVD carbide tools was carried out at cutting speed of 55-95 m/min, feed rate of 0.15-0.35 mm/rev and depth of cut of 0.10-0.20 mm. Wear mechanisms such as abrasivemore » and adhesive were observed on the flank face. Crater wear due to diffusion was also observed on the rake race. The abrasive wear occurred more at nose radius and the fracture on tool were found at the feed rate of 0.35 mm/rev and the depth of cut of 0.20 mm. The adhesion wear takes place after the removal of the coating or coating delaminating. Therefore, adhesion or welding of titanium alloy onto the flank and rake faces demonstrates a strong bond at the workpiece-tool interface.« less

Enhanced photovoltaic performances of graphene/Si solar cells by insertion of a MoS₂ thin film.

PubMed

Tsuboi, Yuka; Wang, Feijiu; Kozawa, Daichi; Funahashi, Kazuma; Mouri, Shinichiro; Miyauchi, Yuhei; Takenobu, Taishi; Matsuda, Kazunari

2015-09-14

Transition-metal dichalcogenides exhibit great potential as active materials in optoelectronic devices because of their characteristic band structure. Here, we demonstrated that the photovoltaic performances of graphene/Si Schottky junction solar cells were significantly improved by inserting a chemical vapor deposition (CVD)-grown, large MoS2 thin-film layer. This layer functions as an effective electron-blocking/hole-transporting layer. We also demonstrated that the photovoltaic properties are enhanced with the increasing number of graphene layers and the decreasing thickness of the MoS2 layer. A high photovoltaic conversion efficiency of 11.1% was achieved with the optimized trilayer-graphene/MoS2/n-Si solar cell.

High-rate deposition of LiNb 1- xTa xO 3 films by thermal plasma spray CVD

NASA Astrophysics Data System (ADS)

Majima, T.; Yamamoto, H.; Kulinich, S. A.; Terashima, K.

2000-12-01

LiNb 1- xTa xO 3 films were prepared by a thermal plasma spray CVD method using liquid source materials. Preferentially (0 0 1)-oriented LiNb 1- xTa xO 3 films with satisfactory in-plane and out-of-plane alignment were fabricated on sapphire (0 0 1) substrates. The full-width at half-maximum (FWHM) of the (0 0 6) rocking curve could achieve 0.12°, which was comparable with those of LiNbO 3 and LiTaO 3 films prepared by other conventional vapor-phase deposition methods. The deposition rate was up to 0.07 μm/min, which was 5-40 times faster than those for most other conventional vapor-phase deposition methods. From inductively coupled plasma atomic emission spectroscopy analysis, x values of these films were estimated to be 0.36-0.49.

ZnO synthesis by high vacuum plasma-assisted chemical vapor deposition using dimethylzinc and atomic oxygen

NASA Astrophysics Data System (ADS)

Barnes, Teresa M.; Hand, Steve; Leaf, Jackie; Wolden, Colin A.

2004-09-01

Zinc oxide thin films were produced by high vacuum plasma-assisted chemical vapor deposition (HVP-CVD) from dimethylzinc (DMZn) and atomic oxygen. HVP-CVD is differentiated from conventional remote plasma-enhanced CVD in that the operating pressures of the inductively coupled plasma (ICP) source and the deposition chamber are decoupled. Both DMZn and atomic oxygen effuse into the deposition chamber under near collisionless conditions. The deposition rate was measured as a function of DMZn and atomic oxygen flux on glass and silicon substrates. Optical emission spectroscopy and quadrupole mass spectrometry (QMS) were used to provide real time analysis of the ICP source and the deposition chamber. The deposition rate was found to be first order in DMZn pressure and zero order in atomic oxygen density. All films demonstrated excellent transparency and were preferentially orientated along the c-axis. The deposition chemistry occurs exclusively through surface-mediated reactions, since the collisionless transport environment eliminates gas-phase chemistry. QMS analysis revealed that DMZn was almost completely consumed, and desorption of unreacted methyl radicals was greatly accelerated in the presence of atomic oxygen. Negligible zinc was detected in the gas phase, suggesting that Zn was efficiently consumed on the substrate and walls of the reactor.

Effect of processing parameters on microstructure of MoS{sub 2} ultra-thin films synthesized by chemical vapor deposition method

DOE Office of Scientific and Technical Information (OSTI.GOV)

Song, Yang; You, Suping; Sun, Kewei

2015-06-15

MoS{sub 2} ultra-thin layers are synthesized using a chemical vapor deposition method based on the sulfurization of molybdenum trioxide (MoO{sub 3}). The ultra-thin layers are characterized by X-ray diffraction (XRD), photoluminescence (PL) spectroscopy and atomic force microscope (AFM). Based on our experimental results, all the processing parameters, such as the tilt angle of substrate, applied voltage, heating time and the weight of source materials have effect on the microstructures of the layers. In this paper, the effects of such processing parameters on the crystal structures and morphologies of the as-grown layers are studied. It is found that the film obtainedmore » with the tilt angle of 0.06° is more uniform. A larger applied voltage is preferred to the growth of MoS{sub 2} thin films at a certain heating time. In order to obtain the ultra-thin layers of MoS{sub 2}, the weight of 0.003 g of source materials is preferred. Under our optimal experimental conditions, the surface of the film is smooth and composed of many uniformly distributed and aggregated particles, and the ultra-thin MoS{sub 2} atomic layers (1∼10 layers) covers an area of more than 2 mm×2 mm.« less

Effect of temperature for synthesizing single-walled carbon nanotubes by catalytic chemical vapor deposition over Mo-Co-MgO catalyst

DOE Office of Scientific and Technical Information (OSTI.GOV)

Niu Zhiqiang; Fang Yan

2008-06-03

The influence of temperature on synthesizing single-walled carbon nanotubes (SWCNTs) by catalytic chemical vapor deposition of methane over Mo-Co-MgO catalyst was studied by Transmission Electron Microscope (TEM) and Raman scattering. The Mo-Co-MgO bimetallic catalyst was prepared by decomposing the mixture of magnesium nitrate, ammonium molybdate, citric acid, and cobalt nitrate. The results show that Mo-Co-MgO bimetallic catalyst is effective to synthesize SWCNTs. By using Mo-Co-MgO bimetallic catalyst, generation of SWCNTs even at 940 K was demonstrated. The optimum temperature of synthesizing SWCNTs over Mo-Co-MgO bimetallic catalyst may be about 1123 K. At 1123 K, the diameters of SWCNTs are inmore » the range of 0.75-1.65 nm. The content of SWCNTs is increased with the increase of temperature below 1123 K and the carbon yield rate is also increased with the increase of synthesis temperature. Therefore, the amount of SWCNTs increases with the increase of temperature below 1123 K. However, above 1123 K, the content of SWCNTs is decreased with the increase of temperature; therefore, it is not effective to increase the amount of SWCNTs through increasing synthesis temperature above 1123 K.« less

Role of Co-Vapors in Vapor Deposition Polymerization

PubMed Central

Lee, Ji Eun; Lee, Younghee; Ahn, Ki-Jin; Huh, Jinyoung; Shim, Hyeon Woo; Sampath, Gayathri; Im, Won Bin; Huh, Yang–Il; Yoon, Hyeonseok

2015-01-01

Polypyrrole (PPy)/cellulose (PPCL) composite papers were fabricated by vapor phase polymerization. Importantly, the vapor-phase deposition of PPy onto cellulose was assisted by employing different co-vapors namely methanol, ethanol, benzene, water, toluene and hexane, in addition to pyrrole. The resulting PPCL papers possessed high mechanical flexibility, large surface-to-volume ratio, and good redox properties. Their main properties were highly influenced by the nature of the co-vaporized solvent. The morphology and oxidation level of deposited PPy were tuned by employing co-vapors during the polymerization, which in turn led to change in the electrochemical properties of the PPCL papers. When methanol and ethanol were used as co-vapors, the conductivities of PPCL papers were found to have improved five times, which was likely due to the enhanced orientation of PPy chain by the polar co-vapors with high dipole moment. The specific capacitance of PPCL papers obtained using benzene, toluene, water and hexane co-vapors was higher than those of the others, which is attributed to the enlarged effective surface area of the electrode material. The results indicate that the judicious choice and combination of co-vapors in vapor-deposition polymerization (VDP) offers the possibility of tuning the morphological, electrical, and electrochemical properties of deposited conducting polymers. PMID:25673422

Metalorganic Vapor-Phase Epitaxy Growth Parameters for Two-Dimensional MoS2

NASA Astrophysics Data System (ADS)

Marx, M.; Grundmann, A.; Lin, Y.-R.; Andrzejewski, D.; Kümmell, T.; Bacher, G.; Heuken, M.; Kalisch, H.; Vescan, A.

2018-02-01

The influence of the main growth parameters on the growth mechanism and film formation processes during metalorganic vapor-phase epitaxy (MOVPE) of two-dimensional MoS2 on sapphire (0001) have been investigated. Deposition was performed using molybdenum hexacarbonyl and di- tert-butyl sulfide as metalorganic precursors in a horizontal hot-wall MOVPE reactor from AIXTRON. The structural properties of the MoS2 films were analyzed by atomic force microscopy, scanning electron microscopy, and Raman spectroscopy. It was found that a substrate prebake step prior to growth reduced the nucleation density of the polycrystalline film. Simultaneously, the size of the MoS2 domains increased and the formation of parasitic carbonaceous film was suppressed. Additionally, the influence of growth parameters such as reactor pressure and surface temperature is discussed. An upper limit for these parameters was found, beyond which strong parasitic deposition or incorporation of carbon into MoS2 took place. This carbon contamination became significant at reactor pressure above 100 hPa and temperature above 900°C.

25th anniversary article: CVD polymers: a new paradigm for surface modification and device fabrication.

PubMed

Coclite, Anna Maria; Howden, Rachel M; Borrelli, David C; Petruczok, Christy D; Yang, Rong; Yagüe, Jose Luis; Ugur, Asli; Chen, Nan; Lee, Sunghwan; Jo, Won Jun; Liu, Andong; Wang, Xiaoxue; Gleason, Karen K

2013-10-11

Well-adhered, conformal, thin (<100 nm) coatings can easily be obtained by chemical vapor deposition (CVD) for a variety of technological applications. Room temperature modification with functional polymers can be achieved on virtually any substrate: organic, inorganic, rigid, flexible, planar, three-dimensional, dense, or porous. In CVD polymerization, the monomer(s) are delivered to the surface through the vapor phase and then undergo simultaneous polymerization and thin film formation. By eliminating the need to dissolve macromolecules, CVD enables insoluble polymers to be coated and prevents solvent damage to the substrate. CVD film growth proceeds from the substrate up, allowing for interfacial engineering, real-time monitoring, and thickness control. Initiated-CVD shows successful results in terms of rationally designed micro- and nanoengineered materials to control molecular interactions at material surfaces. The success of oxidative-CVD is mainly demonstrated for the deposition of organic conducting and semiconducting polymers. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Geochronology of the Thompson Creek Mo Deposit: Evidence for the Formation of Arc-related Mo Deposits

NASA Astrophysics Data System (ADS)

Lawrence, C. D.; Coleman, D. S.; Stein, H. J.

2016-12-01

The Thompson Creek Mo deposit in central ID, has been categorized as an arc-related Mo deposit due to the location, grade of Mo, and relative lack of enrichments in F, Rb, and Nb, compared to the Climax-type Mo deposits. Geochronology from this arc-related deposit provides an opportunity to compare and contrast magmatism, and mineralization to that in Climax-type deposits. Distinct pulses of magmatism were required to form the Thompson Creek Mo deposit, which is consistent with recent geochronology from Climax-type deposits. Molybdenite Re-Os geochronology from five veins requires at least three pulses of magmatism and mineralization between 89.39 +/- 0.37 and 88.47 +/- 0.16 Ma. Zircon U-Pb ages from these mineralized samples overlap with molybdenite mineralization, but show a much wider range (91.01 +/- 0.37 to 87.27 +/- 0.69). Previous work from Climax-type Mo deposits suggest a correlation between a super eruption, and the subsequent rapid (<1 Ma) onset, and completion of Mo mineralizing intrusions. The longer life (3-4 Ma) for the Thompson Creek Mo deposit suggests that the mineralizing intrusions for arc-related Mo deposits may not need to have as high [Mo] as the Climax-type deposits. This study also finds a shift in the source of magmatism from the pre- to syn-mineralizing intrusions. Zircons from pre-mineralizing intrusions have much higher (15-60 pg) concentrations of radiogenic Pb than zircons from mineralized intrusions, which all have less than 15 pg, though whole rock [U] are similar.

Etching-free patterning method for electrical characterization of atomically thin MoSe2 films grown by chemical vapor deposition.

PubMed

Utama, M Iqbal Bakti; Lu, Xin; Zhan, Da; Ha, Son Tung; Yuan, Yanwen; Shen, Zexiang; Xiong, Qihua

2014-11-07

Patterning two-dimensional materials into specific spatial arrangements and geometries is essential for both fundamental studies of materials and practical applications in electronics. However, the currently available patterning methods generally require etching steps that rely on complicated and expensive procedures. We report here a facile patterning method for atomically thin MoSe2 films using stripping with an SU-8 negative resist layer exposed to electron beam lithography. Additional steps of chemical and physical etching were not necessary in this SU-8 patterning method. The SU-8 patterning was used to define a ribbon channel from a field effect transistor of MoSe2 film, which was grown by chemical vapor deposition. The narrowing of the conduction channel area with SU-8 patterning was crucial in suppressing the leakage current within the device, thereby allowing a more accurate interpretation of the electrical characterization results from the sample. An electrical transport study, enabled by the SU-8 patterning, showed a variable range hopping behavior at high temperatures.

Low-temperature synthesis of 2D MoS2 on a plastic substrate for a flexible gas sensor.

PubMed

Zhao, Yuxi; Song, Jeong-Gyu; Ryu, Gyeong Hee; Ko, Kyung Yong; Woo, Whang Je; Kim, Youngjun; Kim, Donghyun; Lim, Jun Hyung; Lee, Sunhee; Lee, Zonghoon; Park, Jusang; Kim, Hyungjun

2018-05-08

The efficient synthesis of two-dimensional molybdenum disulfide (2D MoS2) at low temperatures is essential for use in flexible devices. In this study, 2D MoS2 was grown directly at a low temperature of 200 °C on both hard (SiO2) and soft substrates (polyimide (PI)) using chemical vapor deposition (CVD) with Mo(CO)6 and H2S. We investigated the effect of the growth temperature and Mo concentration on the layered growth by Raman spectroscopy and microscopy. 2D MoS2 was grown by using low Mo concentration at a low temperature. Through optical microscopy, Raman spectroscopy, X-ray photoemission spectroscopy, photoluminescence, and transmission electron microscopy measurements, MoS2 produced by low-temperature CVD was determined to possess a layered structure with good uniformity, stoichiometry, and a controllable number of layers. Furthermore, we demonstrated the realization of a 2D MoS2-based flexible gas sensor on a PI substrate without any transfer processes, with competitive sensor performance and mechanical durability at room temperature. This fabrication process has potential for burgeoning flexible and wearable nanotechnology applications.

Chemical reactivity of CVC and CVD SiC with UO2 at high temperatures

NASA Astrophysics Data System (ADS)

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; Snead, Lance L.

2015-05-01

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO2 pellets and evaluated for their potential chemical reaction with UO2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO2 was observed at comparatively low temperatures of 1100 and 1300 °C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity. However, both CVD and CVC SiCs showed some reaction with UO2 at a higher temperature (1500 °C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive than CVD SiC at 1500 °C. Furthermore, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi2, and U3Si2 as a result of SiC reaction with UO2.

Substrate effect on the growth of monolayer dendritic MoS2 on LaAlO3 (100) and its electrocatalytic applications

NASA Astrophysics Data System (ADS)

Li, Cong; Zhang, Yu; Ji, Qingqing; Shi, Jianping; Chen, Zhaolong; Zhou, Xiebo; Fang, Qiyi; Zhang, Yanfeng

2016-09-01

In accommodating the rapid development of two-dimensional (2D) nanomaterials, chemical vapor deposition (CVD) has become a powerful tool for their batch production with desirable characteristics, such as high crystal quality, large domain size, and tunable domain shape. The crystallinity and morphology of the growth substrates usually play a crucial role in the CVD synthesis of high-quality monolayer MoS2, a kind of 2D layered material which has ignited huge interest in nanoelectronics, optoelectronics and energy harvesting, etc. Herein, by utilizing a low-pressure chemical vapor deposition (LPCVD) system, we demonstrate a regioselective synthesis of monolayer MoS2 on the corrugated single-crystal LaAlO3 (100) with twin crystal domains induced by the second-order phase transition. Unique dendritic morphologies with tunable nucleation densities were obtained in different regions of the undulated substrate, presenting a strong substrate modulation effect. Interestingly, the exposure of abundant active edge sites along with the rather high nucleation density makes the monolayer dendritic MoS2 a good electrocatalyst for hydrogen evolution reaction (HER), particularly featured by a rather high exchange current density (70.4 μA cm-2). Furthermore, uniform monolayer MoS2 films can also be obtained and transferred to arbitrary substrates. We believe that this work provides a new growth system for the controllable synthesis of 2D layered materials with unique dendritic morphologies, as well as its great application potential in energy conversion and harvesting.

Nucleation and growth of single layer graphene on electrodeposited Cu by cold wall chemical vapor deposition

NASA Astrophysics Data System (ADS)

Das, Shantanu; Drucker, Jeff

2017-03-01

The nucleation density and average size of graphene crystallites grown using cold wall chemical vapor deposition (CVD) on 4 μm thick Cu films electrodeposited on W substrates can be tuned by varying growth parameters. Growth at a fixed substrate temperature of 1000 °C and total pressure of 700 Torr using Ar, H2 and CH4 mixtures enabled the contribution of total flow rate, CH4:H2 ratio and dilution of the CH4/H2 mixture by Ar to be identified. The largest variation in nucleation density was obtained by varying the CH4:H2 ratio. The observed morphological changes are analogous to those that would be expected if the deposition rate were varied at fixed substrate temperature for physical deposition using thermal evaporation. The graphene crystallite boundary morphology progresses from irregular/jagged through convex hexagonal to regular hexagonal as the effective C deposition rate decreases. This observation suggests that edge diffusion of C atoms along the crystallite boundaries, in addition to H2 etching, may contribute to shape evolution of the graphene crystallites. These results demonstrate that graphene grown using cold wall CVD follows a nucleation and growth mechanism similar to hot wall CVD. As a consequence, the vast knowledge base relevant to hot wall CVD may be exploited for graphene synthesis by the industrially preferable cold wall method.

Epitaxial Growth of GaN Films by Pulse-Mode Hot-Mesh Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Komae, Yasuaki; Yasui, Kanji; Suemitsu, Maki; Endoh, Tetsuo; Ito, Takashi; Nakazawa, Hideki; Narita, Yuzuru; Takata, Masasuke; Akahane, Tadashi

2009-07-01

Intermittent gas supplies for hot-mesh chemical vapor deposition (CVD) for the epitaxial growth of gallium nitride (GaN) films were investigated to improve film crystallinity and optical properties. The GaN films were deposited on SiC/Si(111) substrates using an alternating-source gas supply or an intermittent supply of source gases such as ammonia (NH3) and trimethylgallium (TMG) in hot-mesh CVD after deposition of an aluminum nitride (AlN) buffer layer. The AlN layer was deposited using NH3 and trimethylaluminum (TMA) on a SiC layer grown by carbonization of a Si substrate using propane (C3H8). GaN films were grown on the AlN layer by a reaction between NHx radicals generated on a ruthenium (Ru)-coated tungsten (W) mesh and TMG molecules. After testing various gas supply modes, GaN films with good crystallinity and surface morphology were obtained using an intermittent supply of TMG and a continuous supply of NH3 gas. An optimal interval for the TMG gas supply was also obtained for the apparatus employed.

New developments in CVD diamond for detector applications

NASA Astrophysics Data System (ADS)

Adam, W.; Berdermann, E.; Bergonzo, P.; de Boer, W.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; D'Angelo, P.; Dabrowski, W.; Delpierre, P.; Dulinski, W.; Doroshenko, J.; van Eijk, B.; Fallou, A.; Fischer, P.; Fizzotti, F.; Furetta, C.; Gan, K. K.; Ghodbane, N.; Grigoriev, E.; Hallewell, G.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kaplon, J.; Kass, R.; Keil, M.; Knoepfle, K. T.; Koeth, T.; Krammer, M.; Logiudice, A.; Lu, R.; Mac Lynne, L.; Manfredotti, C.; Meier, D.; Menichelli, D.; Meuser, S.; Mishina, M.; Moroni, L.; Noomen, J.; Oh, A.; Pernicka, M.; Perera, L.; Potenza, R.; Riester, J. L.; Roe, S.; Rudge, A.; Sala, S.; Sampietro, M.; Schnetzer, S.; Sciortino, S.; Stelzer, H.; Stone, R.; Sutera, C.; Trischuk, W.; Tromson, D.; Tuve, C.; Vincenzo, B.; Weilhammer, P.; Wermes, N.; Wetstein, M.; Zeuner, W.; Zoeller, M.

Chemical Vapor Deposition (CVD) diamond has been discussed extensively as an alternative sensor material for use very close to the interaction region of the LHC and other machines where extreme radiation conditions exist. During the last seven years the RD42 collaboration has developed diamond detectors and tested them with LHC electronics towards the end of creating a device usable by experiments. The most recent results of this work are presented. Recently, a new form of CVD diamond has been developed: single crystal CVD diamond which resolves many of the issues associated with poly-crystalline CVD material. The first tests of this material are also presented.

Minimizing artifact formation in magnetorheological finishing of chemical vapor deposition ZnS flats.

PubMed

Kozhinova, Irina A; Romanofsky, Henry J; Maltsev, Alexander; Jacobs, Stephen D; Kordonski, William I; Gorodkin, Sergei R

2005-08-01

The polishing performance of magnetorheological (MR) fluids prepared with a variety of magnetic and nonmagnetic ingredients was studied on four types of initial surface for chemical vapor deposition (CVD) ZnS flats from domestic and foreign sources. The results showed that it was possible to greatly improve smoothing performance of magnetorheological finishing (MRF) by altering the fluid composition, with the best results obtained for nanoalumina abrasive used with soft carbonyl iron and altered MR fluid chemistry. Surface roughness did not exceed 20 nm peak to valley and 2 nm rms after removal of 2 microm of material. The formation of orange peel and the exposure of a pebblelike structure inherent in ZnS from the CVD process were suppressed.

Anisotropic electrical conduction and reduction in dangling-bond density for polycrystalline Si films prepared by catalytic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Niikura, Chisato; Masuda, Atsushi; Matsumura, Hideki

1999-07-01

Polycrystalline Si (poly-Si) films with high crystalline fraction and low dangling-bond density were prepared by catalytic chemical vapor deposition (Cat-CVD), often called hot-wire CVD. Directional anisotropy in electrical conduction, probably due to structural anisotropy, was observed for Cat-CVD poly-Si films. A novel method to separately characterize both crystalline and amorphous phases in poly-Si films using anisotropic electrical conduction was proposed. On the basis of results obtained by the proposed method and electron spin resonance measurements, reduction in dangling-bond density for Cat-CVD poly-Si films was achieved using the condition to make the quality of the included amorphous phase high. The properties of Cat-CVD poly-Si films are found to be promising in solar-cell applications.

Investigation of chemical vapor deposition of garnet films for bubble domain memories

NASA Technical Reports Server (NTRS)

Besser, P. J.; Hamilton, T. N.

1973-01-01

The important process parameters and control required to grow reproducible device quality ferrimagnetic films by chemical vapor deposition (CVD) were studied. The investigation of the critical parameters in the CVD growth process led to the conclusion that the required reproducibility of film properties cannot be achieved with individually controlled separate metal halide sources. Therefore, the CVD growth effort was directed toward replacement of the halide sources with metallic sources with the ultimate goal being the reproducible growth of complex garnet compositions utilizing a single metal alloy source. The characterization of the YGdGaIG films showed that certain characteristics of this material, primarily the low domain wall energy and the large temperature sensitivity, severely limited its potential as a useful material for bubble domain devices. Consequently, at the time of the change from halide to metallic sources, the target film compositions were shifted to more useful materials such as YGdTmGaIG, YEuGaIG and YSmGaIG.

Selective growth of titanium dioxide by low-temperature chemical vapor deposition.

PubMed

Reinke, Michael; Kuzminykh, Yury; Hoffmann, Patrik

2015-05-13

A key factor in engineering integrated optical devices such as electro-optic switches or waveguides is the patterning of thin films into specific geometries. In particular for functional oxides, etching processes are usually developed to a much lower extent than for silicon or silicon dioxide; therefore, selective area deposition techniques are of high interest for these materials. We report the selective area deposition of titanium dioxide using titanium isopropoxide and water in a high-vacuum chemical vapor deposition (HV-CVD) process at a substrate temperature of 225 °C. Here—contrary to conventional thermal CVD processes—only hydrolysis of the precursor on the surface drives the film growth as the thermal energy is not sufficient to thermally decompose the precursor. Local modification of the substrate surface energy by perfluoroalkylsilanization leads to a reduced surface residence time of the precursors and, consequently, to lower reaction rate and a prolonged incubation period before nucleation occurs, hence, enabling selective area growth. We discuss the dependence of the incubation time and the selectivity of the deposition process on the presence of the perfluoroalkylsilanization layer and on the precursor impinging rates—with selectivity, we refer to the difference of desired material deposition, before nucleation occurs in the undesired regions. The highest measured selectivity reached (99 ± 5) nm, a factor of 3 superior than previously reported in an atomic layer deposition process using the same chemistry. Furthermore, resolution of the obtained patterns will be discussed and illustrated.

Chemical reactivity of CVC and CVD SiC with UO 2 at high temperatures

DOE PAGES

Silva, Chinthaka M.; Katoh, Yutai; Voit, Stewart L.; ...

2015-02-11

Two types of silicon carbide (SiC) synthesized using two different vapor deposition processes were embedded in UO 2 pellets and evaluated for their potential chemical reaction with UO 2. While minor reactivity between chemical-vapor-composited (CVC) SiC and UO 2 was observed at comparatively low temperatures of 1100 and 1300 C, chemical-vapor-deposited (CVD) SiC did not show any such reactivity, according to microstructural investigations. But, both CVD and CVC SiCs showed some reaction with UO 2 at a higher temperature (1500 C). Elemental maps supported by phase maps obtained using electron backscatter diffraction indicated that CVC SiC was more reactive thanmore » CVD SiC at 1500 C. Moreover, this investigation indicated the formation of uranium carbides and uranium silicide chemical phases such as UC, USi 2, and U 3Si 2 as a result of SiC reaction with UO 2.« less

Morphological Evolution and Weak Interface Development within CVD-Zirconia Coating Deposited on Hi-Nicalon Fiber

NASA Technical Reports Server (NTRS)

Li, Hao; Lee, Jinil; Libera, Matthew R.; Lee, Woo Y.; Kebbede, Anteneh; Lance, Michael J.; Wang, Hongyu; Morscher, Gregory N.; Gray, Hugh R. (Technical Monitor)

2002-01-01

The phase contents and morphology of a ZrO2 fiber coating deposited at 1050 C on Hi-Nicalon(Tm) by chemical vapor deposition were examined as a function of deposition time from 5 to 120 min. The morphological evolution in the ZrO2 coating was correlated to the development of delamination within the ZrO2 coating. The delamination appears to occur as a result of: (1) continuous formation of tetragonal ZrO2 nuclei on the deposition surface; (2) martensitic transformation of the tetragonal phase to a monoclinic phase upon reaching a critical grain size; and (3) development of significant compressive hoop stresses due to the volume dilation associated with the transformation. Our observations suggest that it will be of critical importance to further understand and eventually control the nucleation and grain growth behavior of CVD ZrO2 and its phase transformation behavior for its potential applications for composites.

Vapor deposition of molybdenum oxide using bis(ethylbenzene) molybdenum and water

DOE Office of Scientific and Technical Information (OSTI.GOV)

Drake, Tasha L.; Stair, Peter C., E-mail: pstair@u.northwestern.edu

2016-09-15

Three molybdenum precursors—bis(acetylacetonate) dioxomolybdenum, molybdenum isopropoxide, and bis(ethylbenzene) molybdenum—were tested for molybdenum oxide vapor deposition. Quartz crystal microbalance studies were performed to monitor growth. Molybdenum isopropoxide and bis(ethylbenzene) molybdenum achieved linear growth rates 0.01 and 0.08 Å/cycle, respectively, using atomic layer deposition techniques. Negligible MoO{sub x} growth was observed on alumina powder using molybdenum isopropoxide, as determined by inductively coupled plasma optical emission spectroscopy. Bis(ethylbenzene) molybdenum achieved loadings of 0.5, 1.1, and 1.9 Mo/nm{sup 2} on alumina powder after one, two, and five cycles, respectively, using atomic layer deposition techniques. The growth window for bis(ethylbenzene) molybdenum is 135–150 °C. An alternative pulsingmore » strategy was also developed for bis(ethylbenzene) molybdenum that results in higher growth rates in less time compared to atomic layer deposition techniques. The outlined process serves as a methodology for depositing molybdenum oxide for catalytic applications. All as-deposited materials undergo further calcination prior to characterization and testing.« less

Continuous, highly flexible, and transparent graphene films by chemical vapor deposition for organic photovoltaics.

PubMed

Gomez De Arco, Lewis; Zhang, Yi; Schlenker, Cody W; Ryu, Koungmin; Thompson, Mark E; Zhou, Chongwu

2010-05-25

We report the implementation of continuous, highly flexible, and transparent graphene films obtained by chemical vapor deposition (CVD) as transparent conductive electrodes (TCE) in organic photovoltaic cells. Graphene films were synthesized by CVD, transferred to transparent substrates, and evaluated in organic solar cell heterojunctions (TCE/poly-3,4-ethylenedioxythiophene:poly styrenesulfonate (PEDOT:PSS)/copper phthalocyanine/fullerene/bathocuproine/aluminum). Key to our success is the continuous nature of the CVD graphene films, which led to minimal surface roughness ( approximately 0.9 nm) and offered sheet resistance down to 230 Omega/sq (at 72% transparency), much lower than stacked graphene flakes at similar transparency. In addition, solar cells with CVD graphene and indium tin oxide (ITO) electrodes were fabricated side-by-side on flexible polyethylene terephthalate (PET) substrates and were confirmed to offer comparable performance, with power conversion efficiencies (eta) of 1.18 and 1.27%, respectively. Furthermore, CVD graphene solar cells demonstrated outstanding capability to operate under bending conditions up to 138 degrees , whereas the ITO-based devices displayed cracks and irreversible failure under bending of 60 degrees . Our work indicates the great potential of CVD graphene films for flexible photovoltaic applications.

Vertical graphene nanosheets synthesized by thermal chemical vapor deposition and the field emission properties

NASA Astrophysics Data System (ADS)

Guo, Xin; Qin, Shengchun; Bai, Shuai; Yue, Hongwei; Li, Yali; Chen, Qiang; Li, Junshuai; He, Deyan

2016-09-01

In this paper, we explored synthesis of vertical graphene nanosheets (VGNs) by thermal chemical vapor deposition (CVD). Through optimizing the experimental condition, growth of well aligned VGNs with uniform morphologies on nickel-coated stainless steel (SS) was realized for the first time by thermal CVD. In the meantime, influence of growth parameters on the VGN morphology was understood based on the balancing between the concentration and kinetic energy of carbon-containing radicals. Structural characterizations demonstrate that the achieved VGNs are normally composed of several graphene layers and less corrugated compared to the ones synthesized by other approaches, e.g. plasma enhanced (PE) CVD. The field emission measurement indicates that the VGNs exhibit relatively stable field emission and a field enhancement factor of about 1470, which is comparable to the values of VGNs prepared by PECVD can be achieved.

What Drives Metal-Surface Step Bunching in Graphene Chemical Vapor Deposition?

NASA Astrophysics Data System (ADS)

Yi, Ding; Luo, Da; Wang, Zhu-Jun; Dong, Jichen; Zhang, Xu; Willinger, Marc-Georg; Ruoff, Rodney S.; Ding, Feng

2018-06-01

Compressive strain relaxation of a chemical vapor deposition (CVD) grown graphene overlayer has been considered to be the main driving force behind metal surface step bunching (SB) in CVD graphene growth. Here, by combining theoretical studies with experimental observations, we prove that the SB can occur even in the absence of a compressive strain, is enabled by the rapid diffusion of metal adatoms beneath the graphene and is driven by the release of the bending energy of the graphene overlayer in the vicinity of steps. Based on this new understanding, we explain a number of experimental observations such as the temperature dependence of SB, and how SB depends on the thickness of the graphene film. This study also shows that SB is a general phenomenon that can occur in all substrates covered by films of two-dimensional (2D) materials.

Impact of reduced graphene oxide on MoS{sub 2} grown by sulfurization of sputtered MoO{sub 3} and Mo precursor films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Pacley, Shanee, E-mail: shanee.pacley@us.af.mil; Brausch, Jacob; Beck-Millerton, Emory

2016-07-15

Monolayer molybdenum disulfide (MoS{sub 2}), a two dimensional semiconducting dichalcogenide material with a bandgap of 1.8–1.9 eV, has demonstrated promise for future use in field effect transistors and optoelectronics. Various approaches have been used for MoS{sub 2} processing, the most common being chemical vapor deposition. During chemical vapor deposition, precursors such as Mo, MoO{sub 3}, and MoCl{sub 5} have been used to form a vapor reaction with sulfur, resulting in thin films of MoS{sub 2}. Currently, MoO{sub 3} ribbons and powder, and MoCl{sub 5} powder have been used. However, the use of ribbons and powder makes it difficult to growmore » large area-continuous films. Sputtering of Mo is an approach that has demonstrated continuous MoS{sub 2} film growth. In this paper, the authors compare the structural properties of MoS{sub 2} grown by sulfurization of pulse vapor deposited MoO{sub 3} and Mo precursor films. In addition, they have studied the effects that reduced graphene oxide (rGO) has on MoS{sub 2} structure. Reports show that rGO increases MoS{sub 2} grain growth during powder vaporization. Herein, the authors report a grain size increase for MoS{sub 2} when rGO was used during sulfurization of both sputtered Mo and MoO{sub 3} precursors. In addition, our transmission electron microscopy results show a more uniform and continuous film growth for the MoS{sub 2} films produced from Mo when compared to the films produced from MoO{sub 3}. Atomic force microscopy images further confirm this uniform and continuous film growth when Mo precursor was used. Finally, x-ray photoelectron spectroscopy results show that the MoS{sub 2} films produced using both precursors were stoichiometric and had about 7–8 layers in thickness, and that there was a slight improvement in stoichiometry when rGO was used.« less

Anisotropic Hydrogen Etching of Chemical Vapor Deposited Graphene

NASA Astrophysics Data System (ADS)

Zhang, Yi; Li, Zhen; Zhang, Luyao; Kim, Pyojae; Zhou, Chongwu

2012-02-01

In terms of the preparation of graphene, chemical vapor deposition (CVD) has raised its popularity as a scalable and cost effective approach for graphene synthesis. While the formation of graphene on copper foil has been intensively studied, the reverse reaction of graphene reacts with hydrogen has not been systematically studied. In this talk we will present a simple, clean, and highly anisotropic hydrogen etching method for CVD graphene catalyzed by the copper substrate. By exposing CVD graphene on copper foil to hydrogen flow around 800 ^oC, we observed that the initially continuous graphene can be etched to have many hexagonal openings. In addition, we found that the etching is temperature dependent and the etching of graphene at 800 oC is most efficient and anisotropic. 80% of the angles of graphene edges after etching are 120^o, indicating the etching is highly anisotropic. No increase of D band along the etched edges indicates that the crystallographic orientation of etching is zigzag direction. Furthermore, we observed that copper played an important role in catalyzing the etching reaction, as no etching was observed for graphene transferred to Si/SiO2 under similar conditions. This highly anisotropic hydrogen etching technology may work as a simple and convenient way to determine graphene crystal orientation and grain size, and may enable the etching of graphene into nanoribbons for electronic applications.

Iridium-coated rhenium thrusters by CVD

NASA Technical Reports Server (NTRS)

Harding, J. T.; Kazaroff, J. M.; Appel, M. A.

1989-01-01

Operation of spacecraft thrusters at increased temperature reduces propellant requirements. Inasmuch as propellant comprises the bulk of a satellite's mass, even a small percentage reduction makes possible a significant enhancement of the mission in terms of increased payload. Because of its excellent high temperature strength, rhenium is often the structural material of choice. It can be fabricated into free-standing shapes by chemical vapor deposition (CVD) onto an expendable mandrel. What rhenium lacks is oxidation resistance, but this can be provided by a coating of iridium, also by CVD. This paper describes the process used by Ultramet to fabricate 22-N (5-lbf) and, more recently, 445-N (100-lbf) Ir/Re thrusters; characterizes the CVD-deposited materials; and summarizes the materials effects of firing these thrusters. Optimal propellant mixture ratios can be employed because the materials withstand an oxidizing environment up to the melting temperature of iridium, 2400 C (4350 F).

Iridium-coated rhenium thrusters by CVD

NASA Technical Reports Server (NTRS)

Harding, John T.; Kazaroff, John M.; Appel, Marshall A.

1988-01-01

Operation of spacecraft thrusters at increased temperature reduces propellant requirements. Inasmuch as propellant comprises the bulk of a satellite's mass, even a small percentage reduction makes possible a significant enhancement of the mission in terms of increased payload. Because of its excellent high temperature strength, rhenium is often the structural material of choice. It can be fabricated into free-standing shapes by chemical vapor deposition (CVD) onto an expendable mandrel. What rhenium lacks is oxidation resistance, but this can be provided by a coating of iridium, also by CVD. This paper describes the process used by Ultramet to fabricate 22-N (5-lbf) and, more recently, 445-N (100-lbf) Ir/Re thrusters; characterizes the CVD-deposited materials; and summarizes the materials effects of firing these thrusters. Optimal propellant mixture ratios can be employed because the materials withstand an oxidizing environment up to the meltimg temperature of iridium, 2400 C (4350 F).

A platform for large-scale graphene electronics--CVD growth of single-layer graphene on CVD-grown hexagonal boron nitride.

PubMed

Wang, Min; Jang, Sung Kyu; Jang, Won-Jun; Kim, Minwoo; Park, Seong-Yong; Kim, Sang-Woo; Kahng, Se-Jong; Choi, Jae-Young; Ruoff, Rodney S; Song, Young Jae; Lee, Sungjoo

2013-05-21

Direct chemical vapor deposition (CVD) growth of single-layer graphene on CVD-grown hexagonal boron nitride (h-BN) film can suggest a large-scale and high-quality graphene/h-BN film hybrid structure with a defect-free interface. This sequentially grown graphene/h-BN film shows better electronic properties than that of graphene/SiO2 or graphene transferred on h-BN film, and suggests a new promising template for graphene device fabrication. Copyright © 2013 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Growth behavior of carbon nanotubes on multilayered metal catalyst film (Al/Fe/Mo) in chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cui, H.; Eres, G.; Howe, J. Y.; Puretzky, A.; Varela, M.; Geohegan, D. B.; Lowndes, D. H.

2003-03-01

The temperature- and time- dependences of carbon nanotube (CNT) growth by chemical vapor deposition are studied using a multilayered Al/Fe/Mo catalyst on silicon substrates. Within the 600 - 1100 ^oC temperature range in these studies, narrower temperature ranges were determined for the growth of aligned multi-walled carbon nanotubes (MWCNTs) and single-walled carbon nanotubes (SWCNTs). Aligned MWCNT growth is favored at lower temperatures ( ˜700 ^oC). At 900 ^oC, in contrast to earlier work, double-walled carbon nanotubes (DWCNTs) are found more abundant than SWCNTs. At further elevated temperature, highly defective carbon structures are produced. Defects also are found to accumulate faster than the ordered graphitic structure if the growth of CNTs is extended to long growth durations. Atomic force microscopy, field emission scanning electron microscopy, high resolution transmission electron microscopy, and Raman spectroscopy are used to characterize the catalyst and various types of CNTs.

CVD-graphene for low equivalent series resistance in rGO/CVD-graphene/Ni-based supercapacitors.

PubMed

Kwon, Young Hwi; Kumar, Sunil; Bae, Joonho; Seo, Yongho

2018-05-11

Reduced equivalent series resistance (ESR) is necessary, particularly at a high current density, for high performance supercapacitors, and the interface resistance between the current collector and electrode material is one of the main components of ESR. In this report, we have optimized chemical vapor deposition-grown graphene (CVD-G) on a current collector (Ni-foil) using reduced graphene oxide as an active electrode material to fabricate an electric double layer capacitor with reduced ESR. The CVD-G was grown at different cooling rates-20 °C min -1 , 40 °C min -1 and 100 °C min -1 -to determine the optimum conditions. The lowest ESR, 0.38 Ω, was obtained for a cell with a 100 °C min -1 cooling rate, while the sample without a CVD-G interlayer exhibited 0.80 Ω. The CVD-G interlayer-based supercapacitors exhibited fast CD characteristics with high scan rates up to 10 Vs -1 due to low ESR. The specific capacitances deposited with CVD-G were in the range of 145.6 F g -1 -213.8 F g -1 at a voltage scan rate of 0.05 V s -1 . A quasi-rectangular behavior was observed in the cyclic voltammetry curves, even at very high scan rates of 50 and 100 V s -1 , for the cell with optimized CVD-G at higher cooling rates, i.e. 100 °C min -1 .

CVD-graphene for low equivalent series resistance in rGO/CVD-graphene/Ni-based supercapacitors

NASA Astrophysics Data System (ADS)

Kwon, Young Hwi; Kumar, Sunil; Bae, Joonho; Seo, Yongho

2018-05-01

Reduced equivalent series resistance (ESR) is necessary, particularly at a high current density, for high performance supercapacitors, and the interface resistance between the current collector and electrode material is one of the main components of ESR. In this report, we have optimized chemical vapor deposition-grown graphene (CVD-G) on a current collector (Ni-foil) using reduced graphene oxide as an active electrode material to fabricate an electric double layer capacitor with reduced ESR. The CVD-G was grown at different cooling rates—20 °C min‑1, 40 °C min‑1 and 100 °C min‑1—to determine the optimum conditions. The lowest ESR, 0.38 Ω, was obtained for a cell with a 100 °C min‑1 cooling rate, while the sample without a CVD-G interlayer exhibited 0.80 Ω. The CVD-G interlayer-based supercapacitors exhibited fast CD characteristics with high scan rates up to 10 Vs‑1 due to low ESR. The specific capacitances deposited with CVD-G were in the range of 145.6 F g‑1–213.8 F g‑1 at a voltage scan rate of 0.05 V s‑1. A quasi-rectangular behavior was observed in the cyclic voltammetry curves, even at very high scan rates of 50 and 100 V s‑1, for the cell with optimized CVD-G at higher cooling rates, i.e. 100 °C min‑1.

Chemical vapor deposited silica coatings for solar mirror protection

NASA Technical Reports Server (NTRS)

Gulino, Daniel A.; Dever, Therese M.; Banholzer, William F.

1988-01-01

A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica flims, and hence such films would be desirable for this application.

Chemical vapor deposited silica coatings for solar mirror protection

NASA Technical Reports Server (NTRS)

Gulino, Daniel A.; Dever, Therese M.; Banholzer, William F.

1988-01-01

A variety of techniques is available to apply protective coatings to oxidation susceptible spacecraft components, and each has associated advantages and disadvantages. Film applications by means of chemical vapor deposition (CVD) has the advantage of being able to be applied conformally to objects of irregular shape. For this reason, a study was made of the oxygen plasma durability of thin film (less than 5000 A) silicon dioxide coatings applied by CVD. In these experiments, such coatings were applied to silver mirrors, which are strongly subject to oxidation, and which are proposed for use on the space station solar dynamic power system. Results indicate that such coatings can provide adequate protection without affecting the reflectance of the mirror. Scanning electron micrographs indicated that oxidation of the silver layer did occur at stress crack locations, but this did not affect the measured solar reflectances. Oxidation of the silver did not proceed beyond the immediate location of the crack. Such stress cracks did not occur in thinner silica films, and hence such films would be desirable for this application.

Top-gated chemical vapor deposition grown graphene transistors with current saturation.

PubMed

Bai, Jingwei; Liao, Lei; Zhou, Hailong; Cheng, Rui; Liu, Lixin; Huang, Yu; Duan, Xiangfeng

2011-06-08

Graphene transistors are of considerable interest for radio frequency (rf) applications. In general, transistors with large transconductance and drain current saturation are desirable for rf performance, which is however nontrivial to achieve in graphene transistors. Here we report high-performance top-gated graphene transistors based on chemical vapor deposition (CVD) grown graphene with large transconductance and drain current saturation. The graphene transistors were fabricated with evaporated high dielectric constant material (HfO(2)) as the top-gate dielectrics. Length scaling studies of the transistors with channel length from 5.6 μm to 100 nm show that complete current saturation can be achieved in 5.6 μm devices and the saturation characteristics degrade as the channel length shrinks down to the 100-300 nm regime. The drain current saturation was primarily attributed to drain bias induced shift of the Dirac points. With the selective deposition of HfO(2) gate dielectrics, we have further demonstrated a simple scheme to realize a 300 nm channel length graphene transistors with self-aligned source-drain electrodes to achieve the highest transconductance of 250 μS/μm reported in CVD graphene to date.

Paralinear Oxidation of CVD SiC in Water Vapor

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Hann, Raiford E., Jr.

1997-01-01

The oxidation kinetics of CVD SiC were monitored by thermogravimetric analysis (TGA) in a 50% H2O/50% O2 gas mixture flowing at 4.4 cm/s for temperatures between 1200 and 1400 C. Paralinear weight change kinetics were observed as the water vapor oxidized the SiC and simultaneously volatilized the silica scale. The long-term degradation rate of SiC is determined by the volatility of the silica scale. Rapid SiC surface recession rates were estimated from these data for actual aircraft engine combustor conditions.

Highly Conductive and Transparent Large-Area Bilayer Graphene Realized by MoCl5 Intercalation.

PubMed

Kinoshita, Hiroki; Jeon, Il; Maruyama, Mina; Kawahara, Kenji; Terao, Yuri; Ding, Dong; Matsumoto, Rika; Matsuo, Yutaka; Okada, Susumu; Ago, Hiroki

2017-11-01

Bilayer graphene (BLG) comprises a 2D nanospace sandwiched by two parallel graphene sheets that can be used to intercalate molecules or ions for attaining novel functionalities. However, intercalation is mostly demonstrated with small, exfoliated graphene flakes. This study demonstrates intercalation of molybdenum chloride (MoCl 5 ) into a large-area, uniform BLG sheet, which is grown by chemical vapor deposition (CVD). This study reveals that the degree of MoCl 5 intercalation strongly depends on the stacking order of the graphene; twist-stacked graphene shows a much higher degree of intercalation than AB-stacked. Density functional theory calculations suggest that weak interlayer coupling in the twist-stacked graphene contributes to the effective intercalation. By selectively synthesizing twist-rich BLG films through control of the CVD conditions, low sheet resistance (83 Ω ▫ -1 ) is realized after MoCl 5 intercalation, while maintaining high optical transmittance (≈95%). The low sheet resistance state is relatively stable in air for more than three months. Furthermore, the intercalated BLG film is applied to organic solar cells, realizing a high power conversion efficiency. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Optimization of operating parameters in polysilicon chemical vapor deposition reactor with response surface methodology

NASA Astrophysics Data System (ADS)

An, Li-sha; Liu, Chun-jiao; Liu, Ying-wen

2018-05-01

In the polysilicon chemical vapor deposition reactor, the operating parameters are complex to affect the polysilicon's output. Therefore, it is very important to address the coupling problem of multiple parameters and solve the optimization in a computationally efficient manner. Here, we adopted Response Surface Methodology (RSM) to analyze the complex coupling effects of different operating parameters on silicon deposition rate (R) and further achieve effective optimization of the silicon CVD system. Based on finite numerical experiments, an accurate RSM regression model is obtained and applied to predict the R with different operating parameters, including temperature (T), pressure (P), inlet velocity (V), and inlet mole fraction of H2 (M). The analysis of variance is conducted to describe the rationality of regression model and examine the statistical significance of each factor. Consequently, the optimum combination of operating parameters for the silicon CVD reactor is: T = 1400 K, P = 3.82 atm, V = 3.41 m/s, M = 0.91. The validation tests and optimum solution show that the results are in good agreement with those from CFD model and the deviations of the predicted values are less than 4.19%. This work provides a theoretical guidance to operate the polysilicon CVD process.

Vapor Wall Deposition in Chambers: Theoretical Considerations

NASA Astrophysics Data System (ADS)

McVay, R.; Cappa, C. D.; Seinfeld, J.

2014-12-01

In order to constrain the effects of vapor wall deposition on measured secondary organic aerosol (SOA) yields in laboratory chambers, Zhang et al. (2014) varied the seed aerosol surface area in toluene oxidation and observed a clear increase in the SOA yield with increasing seed surface area. Using a coupled vapor-particle dynamics model, we examine the extent to which this increase is the result of vapor wall deposition versus kinetic limitations arising from imperfect accommodation of organic species into the particle phase. We show that a seed surface area dependence of the SOA yield is present only when condensation of vapors onto particles is kinetically limited. The existence of kinetic limitation can be predicted by comparing the characteristic timescales of gas-phase reaction, vapor wall deposition, and gas-particle equilibration. The gas-particle equilibration timescale depends on the gas-particle accommodation coefficient αp. Regardless of the extent of kinetic limitation, vapor wall deposition depresses the SOA yield from that in its absence since vapor molecules that might otherwise condense on particles deposit on the walls. To accurately extrapolate chamber-derived yields to atmospheric conditions, both vapor wall deposition and kinetic limitations must be taken into account.

MoSi 2 Oxidation in 670-1498 K Water Vapor

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sooby Wood, Elizabeth; Parker, Stephen S.; Nelson, Andrew T.

Molybdenum disilicide (MoSi 2) has well documented oxidation resistance at high temperature (T > 1273 K) in dry O 2 containing atmospheres due to the formation of a passive SiO 2 surface layer. But, its behavior under atmospheres where water vapor is the dominant species has received far less attention. Oxidation testing of MoSi 2 was performed at temperatures ranging from 670–1498 K in both 75% water vapor and synthetic air (Ar-O2, 80%–20%) containing atmospheres. Here the thermogravimetric and microscopy data describing these phenomena are presented. Over the temperature range investigated, MoSi 2 displays more mass gain in water vapormore » than in air. The oxidation kinetics observed in water vapor differ from that of the air samples. Two volatile oxides, MoO 2(OH) 2 and Si(OH) 4, are thought to be the species responsible for the varied kinetics, at 670–877 K and at 1498 K, respectively. Finally, we observed an increase in oxidation (140–300 mg/cm 2) from 980–1084 K in water vapor, where passivation is observed in air.« less

MoSi 2 Oxidation in 670-1498 K Water Vapor

DOE PAGES

Sooby Wood, Elizabeth; Parker, Stephen S.; Nelson, Andrew T.; ...

2016-03-08

Molybdenum disilicide (MoSi 2) has well documented oxidation resistance at high temperature (T > 1273 K) in dry O 2 containing atmospheres due to the formation of a passive SiO 2 surface layer. But, its behavior under atmospheres where water vapor is the dominant species has received far less attention. Oxidation testing of MoSi 2 was performed at temperatures ranging from 670–1498 K in both 75% water vapor and synthetic air (Ar-O2, 80%–20%) containing atmospheres. Here the thermogravimetric and microscopy data describing these phenomena are presented. Over the temperature range investigated, MoSi 2 displays more mass gain in water vapormore » than in air. The oxidation kinetics observed in water vapor differ from that of the air samples. Two volatile oxides, MoO 2(OH) 2 and Si(OH) 4, are thought to be the species responsible for the varied kinetics, at 670–877 K and at 1498 K, respectively. Finally, we observed an increase in oxidation (140–300 mg/cm 2) from 980–1084 K in water vapor, where passivation is observed in air.« less

Low-temperature-grown continuous graphene films from benzene by chemical vapor deposition at ambient pressure

NASA Astrophysics Data System (ADS)

Jang, Jisu; Son, Myungwoo; Chung, Sunki; Kim, Kihyeun; Cho, Chunhum; Lee, Byoung Hun; Ham, Moon-Ho

2015-12-01

There is significant interest in synthesizing large-area graphene films at low temperatures by chemical vapor deposition (CVD) for nanoelectronic and flexible device applications. However, to date, low-temperature CVD methods have suffered from lower surface coverage because micro-sized graphene flakes are produced. Here, we demonstrate a modified CVD technique for the production of large-area, continuous monolayer graphene films from benzene on Cu at 100-300 °C at ambient pressure. In this method, we extended the graphene growth step in the absence of residual oxidizing species by introducing pumping and purging cycles prior to growth. This led to continuous monolayer graphene films with full surface coverage and excellent quality, which were comparable to those achieved with high-temperature CVD; for example, the surface coverage, transmittance, and carrier mobilities of the graphene grown at 300 °C were 100%, 97.6%, and 1,900-2,500 cm2 V-1 s-1, respectively. In addition, the growth temperature was substantially reduced to as low as 100 °C, which is the lowest temperature reported to date for pristine graphene produced by CVD. Our modified CVD method is expected to allow the direct growth of graphene in device manufacturing processes for practical applications while keeping underlying devices intact.

Chemical vapor deposition and characterization of polysilanes polymer based thin films and their applications in compound semiconductors and silicon devices

NASA Astrophysics Data System (ADS)

Oulachgar, El Hassane

As the semiconductors industry is moving toward nanodevices, there is growing need to develop new materials and thin films deposition processes which could enable strict control of the atomic composition and structure of thin film materials in order to achieve precise control on their electrical and optical properties. The accurate control of thin film characteristics will become increasingly important as the miniaturization of semiconductor devices continue. There is no doubt that chemical synthesis of new materials and their self assembly will play a major role in the design and fabrication of next generation semiconductor devices. The objective of this work is to investigate the chemical vapor deposition (CVD) process of thin film using a polymeric precursor as a source material. This process offers many advantages including low deposition cost, hazard free working environment, and most importantly the ability to customize the polymer source material through polymer synthesis and polymer functionalization. The combination between polymer synthesis and CVD process will enable the design of new generation of complex thin film materials with a wide range of improved chemical, mechanical, electrical and optical properties which cannot be easily achieved through conventional CVD processes based on gases and small molecule precursors. In this thesis we mainly focused on polysilanes polymers and more specifically poly(dimethylsilanes). The interest in these polymers is motivated by their distinctive electronic and photonic properties which are attributed to the delocalization of the sigma-electron along the Si-Si backbone chain. These characteristics make polysilane polymers very promising in a broad range of applications as a dielectric, a semiconductor and a conductor. The polymer-based CVD process could be eventually extended to other polymer source materials such as polygermanes, as well as and a variety of other inorganic and hybrid organic-inorganic polymers

Development of CVD-W coatings on CuCrZr and graphite substrates with a PVD intermediate layer

NASA Astrophysics Data System (ADS)

Song, Jiupeng; Lian, Youyun; Lv, Yanwei; Liu, Junyong; Yu, Yang; Liu, Xiang; Yan, Binyou; Chen, Zhigang; Zhuang, Zhigang; Zhao, Ximeng; Qi, Yang

2014-12-01

In order to apply tungsten (W) coatings by chemical vapor deposition (CVD) for repairing or updating the plasma facing components (PFCs) of the first wall and divertor in existing or future tokomaks, where CuCrZr or graphite is the substrate material, an intermediate layer by physical vapor deposition (PVD) has been used to accommodate the interface stress due to the mismatch of thermal expansion or act as a diffusion barrier between the CVD-W coating and the substrate. The prepared CuCrZr/PVD-Cu/CVD-W sample with active cooling has passed thermal fatigue tests by electron beam with an absorbed power of 2.2 MW/m2, 50 s on/50 s off, for 100 cycles. Another graphite/PVD-Si/CVD-W sample without active cooling underwent thermal fatigue testing with an absorbed power density of 4.62 MW/m2, 5 s on/25 s off, for 200 cycles, and no catastrophic failure was found.

Synthesis and Characterization of Tin(IV) Oxide Obtained by Chemical Vapor Deposition Method

NASA Astrophysics Data System (ADS)

Nagirnyak, Svitlana V.; Lutz, Victoriya A.; Dontsova, Tatiana A.; Astrelin, Igor M.

2016-07-01

The effect of precursors on the characteristics of tin oxide obtained by chemical vapor deposition (CVD) method was investigated. The synthesis of nanosized tin(IV) oxide was carried out with the use of two different precursors: tin(II) oxalate obtained using tin chloride(II) and oxalic acid; tin(II) oxalate obtained using tin chloride(II); and ammonium oxalate. The synthesized tin(IV) oxide samples were studied by electron microscopy, X-ray diffraction and optical spectra. The lattice parameters of tin(IV) oxide samples were defined, the bandgap of samples were calculated.

Equilibrium chemical vapor deposition growth of Bernal-stacked bilayer graphene.

PubMed

Zhao, Pei; Kim, Sungjin; Chen, Xiao; Einarsson, Erik; Wang, Miao; Song, Yenan; Wang, Hongtao; Chiashi, Shohei; Xiang, Rong; Maruyama, Shigeo

2014-11-25

Using ethanol as the carbon source, self-limiting growth of AB-stacked bilayer graphene (BLG) has been achieved on Cu via an equilibrium chemical vapor deposition (CVD) process. We found that during this alcohol catalytic CVD (ACCVD) a source-gas pressure range exists to break the self-limitation of monolayer graphene on Cu, and at a certain equilibrium state it prefers to form uniform BLG with a high surface coverage of ∼94% and AB-stacking ratio of nearly 100%. More importantly, once the BLG is completed, this growth shows a self-limiting manner, and an extended ethanol flow time does not result in additional layers. We investigate the mechanism of this equilibrium BLG growth using isotopically labeled (13)C-ethanol and selective surface aryl functionalization, and results reveal that during the equilibrium ACCVD process a continuous substitution of graphene flakes occurs to the as-formed graphene and the BLG growth follows a layer-by-layer epitaxy mechanism. These phenomena are significantly in contrast to those observed for previously reported BLG growth using methane as precursor.

On the possibility to grow zinc oxide-based transparent conducting oxide films by hot-wire chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Abrutis, Adulfas, E-mail: adulfas.abrutis@chf.vu.lt; Silimavicus, Laimis; Kubilius, Virgaudas

Hot-wire chemical vapor deposition (HW-CVD) was applied to grow zinc oxide (ZnO)-based transparent conducting oxide (TCO) films. Indium (In)-doped ZnO films were deposited using a cold wall pulsed liquid injection CVD system with three nichrome wires installed at a distance of 2 cm from the substrate holder. The wires were heated by an AC current in the range of 0–10 A. Zn and In 2,2,6,6-tetramethyl-3,5-heptanedionates dissolved in 1,2-dimethoxyethane were used as precursors. The hot wires had a marked effect on the growth rates of ZnO, In-doped ZnO, and In{sub 2}O{sub 3} films; at a current of 6–10 A, growth rates weremore » increased by a factor of ≈10–20 compared with those of traditional CVD at the same substrate temperature (400 °C). In-doped ZnO films with thickness of ≈150 nm deposited on sapphire-R grown at a wire current of 9 A exhibited a resistivity of ≈2 × 10{sup −3} Ωcm and transparency of >90% in the visible spectral range. These initial results reveal the potential of HW-CVD for the growth of TCOs.« less

CVD synthesis of large-area, highly crystalline MoSe2 atomic layers on diverse substrates and application to photodetectors.

PubMed

Xia, Jing; Huang, Xing; Liu, Ling-Zhi; Wang, Meng; Wang, Lei; Huang, Ben; Zhu, Dan-Dan; Li, Jun-Jie; Gu, Chang-Zhi; Meng, Xiang-Min

2014-08-07

Synthesis of large-area, atomically thin transition metal dichalcogenides (TMDs) on diverse substrates is of central importance for the large-scale fabrication of flexible devices and heterojunction-based devices. In this work, we successfully synthesized a large area of highly-crystalline MoSe2 atomic layers on SiO2/Si, mica and Si substrates using a simple chemical vapour deposition (CVD) method at atmospheric pressure. Atomic force microscopy (AFM) and Raman spectroscopy reveal that the as-grown ultrathin MoSe2 layers change from a single layer to a few layers. Photoluminescence (PL) spectroscopy demonstrates that while the multi-layer MoSe2 shows weak emission peaks, the monolayer has a much stronger emission peak at ∼ 1.56 eV, indicating the transition from an indirect to a direct bandgap. Transmission electron microscopy (TEM) analysis confirms the single-crystallinity of MoSe2 layers with a hexagonal structure. In addition, the photoresponse performance of photodetectors based on MoSe2 monolayer was studied for the first time. The devices exhibit a rapid response of ∼ 60 ms and a good photoresponsivity of ∼ 13 mA/W (using a 532 nm laser at an intensity of 1 mW mm(-2) and a bias of 10 V), suggesting that MoSe2 monolayer is a promising material for photodetection applications.

Finite Element Analysis Modeling of Chemical Vapor Deposition of Silicon Carbide

DTIC Science & Technology

2014-06-19

thesis primarily focuses on mass transport by gas -phase flow and diffusion , chemical reaction in gas phase and on solid surfaces, and thin film...chemical vapor deposition (CVD). This thesis primarily focuses on mass transport by gas -phase flow and diffusion , chemical reaction in gas phase and...9 Fluid Flow…………………………………………..…………………..…………….9 Thermodynamics………………………………………..………………….….…….11 Chemical Reaction and Diffusion

Core-shell SrTiO3/graphene structure by chemical vapor deposition for enhanced photocatalytic performance

NASA Astrophysics Data System (ADS)

He, Chenye; Bu, Xiuming; Yang, Siwei; He, Peng; Ding, Guqiao; Xie, Xiaoming

2018-04-01

Direct growth of high quality graphene on the surface of SrTiO3 (STO) was realized through chemical vapor deposition (CVD), to construct few-layer 'graphene shell' on every STO nanoparticle. The STO/graphene composite shows significantly enhanced UV light photocatalytic activity compared with the STO/rGO reference. Mechanism analysis confirms the role of special core-shell structure and chemical bond (Tisbnd C) for rapid interfacial electron transfer and effective electron-hole separation.

Intelligent process control of fiber chemical vapor deposition

NASA Astrophysics Data System (ADS)

Jones, John Gregory

Chemical Vapor Deposition (CVD) is a widely used process for the application of thin films. In this case, CVD is being used to apply a thin film interface coating to single crystal monofilament sapphire (Alsb2Osb3) fibers for use in Ceramic Matrix Composites (CMC's). The hot-wall reactor operates at near atmospheric pressure which is maintained using a venturi pump system. Inert gas seals obviate the need for a sealed system. A liquid precursor delivery system has been implemented to provide precise stoichiometry control. Neural networks have been implemented to create real-time process description models trained using data generated based on a Navier-Stokes finite difference model of the process. Automation of the process to include full computer control and data logging capability is also presented. In situ sensors including a quadrupole mass spectrometer, thermocouples, laser scanner, and Raman spectrometer have been implemented to determine the gas phase reactants and coating quality. A fuzzy logic controller has been developed to regulate either the gas phase or the in situ temperature of the reactor using oxygen flow rate as an actuator. Scanning electron microscope (SEM) images of various samples are shown. A hierarchical control structure upon which the control structure is based is also presented.

Spin-Polarized Tunneling through Chemical Vapor Deposited Multilayer Molybdenum Disulfide.

PubMed

Dankert, André; Pashaei, Parham; Kamalakar, M Venkata; Gaur, Anand P S; Sahoo, Satyaprakash; Rungger, Ivan; Narayan, Awadhesh; Dolui, Kapildeb; Hoque, Md Anamul; Patel, Ram Shanker; de Jong, Michel P; Katiyar, Ram S; Sanvito, Stefano; Dash, Saroj P

2017-06-27

The two-dimensional (2D) semiconductor molybdenum disulfide (MoS 2 ) has attracted widespread attention for its extraordinary electrical-, optical-, spin-, and valley-related properties. Here, we report on spin-polarized tunneling through chemical vapor deposited multilayer MoS 2 (∼7 nm) at room temperature in a vertically fabricated spin-valve device. A tunnel magnetoresistance (TMR) of 0.5-2% has been observed, corresponding to spin polarization of 5-10% in the measured temperature range of 300-75 K. First-principles calculations for ideal junctions result in a TMR up to 8% and a spin polarization of 26%. The detailed measurements at different temperature, bias voltages, and density functional theory calculations provide information about spin transport mechanisms in vertical multilayer MoS 2 spin-valve devices. These findings form a platform for exploring spin functionalities in 2D semiconductors and understanding the basic phenomena that control their performance.

Tribological Characteristics and Applications of Superhard Coatings: CVD Diamond, DLC, and c-BN

NASA Technical Reports Server (NTRS)

Miyoshi, Kazuhisa; Murakawa, Masao; Watanabe, Shuichi; Takeuchi, Sadao; Wu, Richard L. C.

1999-01-01

Results of fundamental research on the tribological properties of chemical-vapor-deposited (CVD) diamond, diamondlike carbon, and cubic boron nitride films in sliding contact with CVD diamond in ultrahigh vacuum, dry nitrogen, humid air, and water are discussed. Furthermore, the actual and potential applications of the three different superhard coatings in the field of tribology technology, particularly for wear parts and tools, are reviewed.

Interface properties of SiO2/GaN structures formed by chemical vapor deposition with remote oxygen plasma mixed with Ar or He

NASA Astrophysics Data System (ADS)

Truyen, Nguyen Xuan; Taoka, Noriyuki; Ohta, Akio; Makihara, Katsunori; Yamada, Hisashi; Takahashi, Tokio; Ikeda, Mitsuhisa; Shimizu, Mitsuaki; Miyazaki, Seiichi

2018-06-01

The impacts of noble gas species (Ar and He) on the formation of a SiO2/GaN structure formed by a remote oxygen plasma-enhanced chemical vapor deposition (ROPE-CVD) method were systematically investigated. Atomic force microscopy revealed that ROPE-CVD with He leads to a smooth SiO2 surface compared with the case of Ar. We found that no obvious oxidations of the GaN surfaces after the SiO2 depositions with the both Ar and He cases were observed. The capacitance–voltage (C–V) curves of the GaN MOS capacitors formed by ROPE-CVD with the Ar and He dilutions show good interface properties with no hysteresis and good agreement with the ideal C–V curves even after post deposition annealing at 800 °C. Besides, we found that the current density–oxide electric field characteristics shows a gate leakage current for the Ar case lower than the He case.

Modeling chemical vapor deposition of silicon dioxide in microreactors at atmospheric pressure

NASA Astrophysics Data System (ADS)

Konakov, S. A.; Krzhizhanovskaya, V. V.

2015-01-01

We developed a multiphysics mathematical model for simulation of silicon dioxide Chemical Vapor Deposition (CVD) from tetraethyl orthosilicate (TEOS) and oxygen mixture in a microreactor at atmospheric pressure. Microfluidics is a promising technology with numerous applications in chemical synthesis due to its high heat and mass transfer efficiency and well-controlled flow parameters. Experimental studies of CVD microreactor technology are slow and expensive. Analytical solution of the governing equations is impossible due to the complexity of intertwined non-linear physical and chemical processes. Computer simulation is the most effective tool for design and optimization of microreactors. Our computational fluid dynamics model employs mass, momentum and energy balance equations for a laminar transient flow of a chemically reacting gas mixture at low Reynolds number. Simulation results show the influence of microreactor configuration and process parameters on SiO2 deposition rate and uniformity. We simulated three microreactors with the central channel diameter of 5, 10, 20 micrometers, varying gas flow rate in the range of 5-100 microliters per hour and temperature in the range of 300-800 °C. For each microchannel diameter we found an optimal set of process parameters providing the best quality of deposited material. The model will be used for optimization of the microreactor configuration and technological parameters to facilitate the experimental stage of this research.

Evaluation of CVD silicon carbide for synchrotron radiation mirrors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takacs, P.Z.

1981-07-01

Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense x-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, andmore » few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods.« less

Evaluation of CVD silicon carbide for synchrotron radiation mirrors

NASA Astrophysics Data System (ADS)

Takacs, Peter Z.

1982-04-01

Chemical vapor deposited silicon carbide (CVD SiC) is a recent addition to the list of materials suitable for use in the harsh environment of synchrotron radiation (SR) beam lines. SR mirrors for use at normal incidence must be ultrahigh vacuum compatible, must withstand intense X-ray irradiation without surface damage, must be capable of being polished to an extremely smooth surface finish, and must maintain surface figure under thermal loading. CVD SiC exceeds the performance of conventional optical materials in all these areas. It is, however, a relatively new optical material. Few manufacturers have experience in producing optical quality material, and few opticians have experience in figuring and polishing the material. The CVD material occurs in a variety of forms, sensitively dependent upon reaction chamber production conditions. We are evaluating samples of CVD SiC obtained commercially from various manufacturers, representing a range of deposition conditions, to determine which types of CVD material are most suitable for superpolishing. At the time of this writing, samples are being polished by several commercial vendors and surface finish characteristics are being evaluated by various analytical methods.

Perspective: Highly stable vapor-deposited glasses

NASA Astrophysics Data System (ADS)

Ediger, M. D.

2017-12-01

This article describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the "ideal glass." Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquids are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.

Perspective: Highly stable vapor-deposited glasses

DOE PAGES

Ediger, M. D.

2017-12-07

This paper describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the “ideal glass”. Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquidsmore » are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.« less

Perspective: Highly stable vapor-deposited glasses

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ediger, M. D.

This paper describes recent progress in understanding highly stable glasses prepared by physical vapor deposition and provides perspective on further research directions for the field. For a given molecule, vapor-deposited glasses can have higher density and lower enthalpy than any glass that can be prepared by the more traditional route of cooling a liquid, and such glasses also exhibit greatly enhanced kinetic stability. Because vapor-deposited glasses can approach the bottom of the amorphous part of the potential energy landscape, they provide insights into the properties expected for the “ideal glass”. Connections between vapor-deposited glasses, liquid-cooled glasses, and deeply supercooled liquidsmore » are explored. The generality of stable glass formation for organic molecules is discussed along with the prospects for stable glasses of other types of materials.« less

Aqueous, Room Temperature Deposition of Silicon, Molybdenum and Germanium onto Aluminum Substrates

NASA Astrophysics Data System (ADS)

Krishnamurthy, Aarti Krishna

Electrochemical deposition of active materials such as Si, Mo and Ge is notoriously difficult, so they are typically deposited using expensive vacuum methods such as chemical vapor deposition (CVD), plasma-enhanced chemical vapor deposition (PECVD), and magnetron sputtering. However, for most materials, electrochemical deposition has significant advantages of cost, scalability, and manufacturability. There are two main challenges in depositing these materials from aqueous electrolytes at room temperature, namely their highly cathodic standard reduction potential and the formation of native oxides. This has led researchers to use non-aqueous electrolytes such as organic solvents, room temperature ionic liquids (RTILs), and high temperature molten salts. However, these have drawbacks over aqueous electrolytes such as high cost, low conductivity, flammability, and corrosive behavior. During my PhS studies, these two challenges were overcome by using the galvanic method of deposition and by including HF in the electrolyte. Si thin films are employed in a variety of technologies, including microelectronic and photovoltaic devices, Li ion battery anodes, and corrosion-resistant coatings. A galvanic and a combined galvanic/electroless method of Si deposition were developed using aqueous electrolytes at room temperature to obtain nanoporous and compact films, respectively. These films were characterized to understand the surface morphology, thickness, crystallinity, growth rate, composition and nucleation behavior. Approximately 7-10 µm thick compact Si films were achieved with a deposition time of around 28 hours. The galvanic method of deposition was also extended to deposit compact Mo films. Mo thin films have a number of technological applications, including back contacts for CIGS/CZTS photovoltaic devices and corrosion-resistant coatings. Mo thin films were also thoroughly characterized and approximately 4.5 µm thick films were obtained after 3 hours. Similar to Si

Mass-Spectrometric Studies of Catalytic Chemical Vapor Deposition Processes of Organic Silicon Compounds Containing Nitrogen

NASA Astrophysics Data System (ADS)

Morimoto, Takashi; Ansari, S. G.; Yoneyama, Koji; Nakajima, Teppei; Masuda, Atsushi; Matsumura, Hideki; Nakamura, Megumi; Umemoto, Hironobu

2006-02-01

The mechanism of catalytic chemical vapor deposition (Cat-CVD) processes for hexamethyldisilazane (HMDS) and trisdimethylaminosilane (TDMAS), which are used as source gases to prepare SiNx or SiCxNy films, was studied using three different mass spectrometric techniques: ionization by Li+ ion attachment, vacuum-ultraviolet radiation and electron impact. The results for HMDS show that Si-N bonds dissociate selectively, although Si-C bonds are weaker, and (CH3)3SiNH should be one of the main precursors of deposited films. This decomposition mechanism did not change when NH3 was introduced, but the decomposition efficiency was slightly increased. Similar results were obtained for TDMAS.

Transparent Large-Area MoS2 Phototransistors with Inkjet-Printed Components on Flexible Platforms.

PubMed

Kim, Tae-Young; Ha, Jewook; Cho, Kyungjune; Pak, Jinsu; Seo, Jiseok; Park, Jongjang; Kim, Jae-Keun; Chung, Seungjun; Hong, Yongtaek; Lee, Takhee

2017-10-24

Two-dimensional (2D) transition-metal dichalcogenides (TMDCs) have gained considerable attention as an emerging semiconductor due to their promising atomically thin film characteristics with good field-effect mobility and a tunable band gap energy. However, their electronic applications have been generally realized with conventional inorganic electrodes and dielectrics implemented using conventional photolithography or transferring processes that are not compatible with large-area and flexible device applications. To facilitate the advantages of 2D TMDCs in practical applications, strategies for realizing flexible and transparent 2D electronics using low-temperature, large-area, and low-cost processes should be developed. Motivated by this challenge, we report fully printed transparent chemical vapor deposition (CVD)-synthesized monolayer molybdenum disulfide (MoS 2 ) phototransistor arrays on flexible polymer substrates. All the electronic components, including dielectric and electrodes, were directly deposited with mechanically tolerable organic materials by inkjet-printing technology onto transferred monolayer MoS 2 , and their annealing temperature of <180 °C allows the direct fabrication on commercial flexible substrates without additional assisted-structures. By integrating the soft organic components with ultrathin MoS 2 , the fully printed MoS 2 phototransistors exhibit excellent transparency and mechanically stable operation.

Chemical vapor deposited monolayer MoS2 top-gate MOSFET with atomic-layer-deposited ZrO2 as gate dielectric

NASA Astrophysics Data System (ADS)

Hu, Yaoqiao; Jiang, Huaxing; Lau, Kei May; Li, Qiang

2018-04-01

For the first time, ZrO2 dielectric deposition on pristine monolayer MoS2 by atomic layer deposition (ALD) is demonstrated and ZrO2/MoS2 top-gate MOSFETs have been fabricated. ALD ZrO2 overcoat, like other high-k oxides such as HfO2 and Al2O3, was shown to enhance the MoS2 channel mobility. As a result, an on/off current ratio of over 107, a subthreshold slope of 276 mV dec-1, and a field-effect electron mobility of 12.1 cm2 V-1 s-1 have been achieved. The maximum drain current of the MOSFET with a top-gate length of 4 μm and a source/drain spacing of 9 μm is measured to be 1.4 μA μm-1 at V DS = 5 V. The gate leakage current is below 10-2 A cm-2 under a gate bias of 10 V. A high dielectric breakdown field of 4.9 MV cm-1 is obtained. Gate hysteresis and frequency-dependent capacitance-voltage measurements were also performed to characterize the ZrO2/MoS2 interface quality, which yielded an interface state density of ˜3 × 1012 cm-2 eV-1.

Electrical property of macroscopic graphene composite fibers prepared by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Sun, Haibin; Fu, Can; Gao, Yanli; Guo, Pengfei; Wang, Chunlei; Yang, Wenchao; Wang, Qishang; Zhang, Chongwu; Wang, Junya; Xu, Junqi

2018-07-01

Graphene fibers are promising candidates in portable and wearable electronics due to their tiny volume, flexibility and wearability. Here, we successfully synthesized macroscopic graphene composite fibers via a two-step process, i.e. first electrospinning and then chemical vapor deposition (CVD). Briefly, the well-dispersed PAN nanofibers were sprayed onto the copper surface in an electrified thin liquid jet by electrospinning. Subsequently, CVD growth process induced the formation of graphene films using a PAN-solid source of carbon and a copper catalyst. Finally, crumpled and macroscopic graphene composite fibers were obtained from carbon nanofiber/graphene composite webs by self-assembly process in the deionized water. Temperature-dependent conduct behavior reveals that electron transport of the graphene composite fibers belongs to hopping mechanism and the typical electrical conductivity reaches 4.59 × 103 S m‑1. These results demonstrated that the graphene composite fibers are promising for the next-generation flexible and wearable electronics.

Electrical property of macroscopic graphene composite fibers prepared by chemical vapor deposition.

PubMed

Sun, Haibin; Fu, Can; Gao, Yanli; Guo, Pengfei; Wang, Chunlei; Yang, Wenchao; Wang, Qishang; Zhang, Chongwu; Wang, Junya; Xu, Junqi

2018-07-27

Graphene fibers are promising candidates in portable and wearable electronics due to their tiny volume, flexibility and wearability. Here, we successfully synthesized macroscopic graphene composite fibers via a two-step process, i.e. first electrospinning and then chemical vapor deposition (CVD). Briefly, the well-dispersed PAN nanofibers were sprayed onto the copper surface in an electrified thin liquid jet by electrospinning. Subsequently, CVD growth process induced the formation of graphene films using a PAN-solid source of carbon and a copper catalyst. Finally, crumpled and macroscopic graphene composite fibers were obtained from carbon nanofiber/graphene composite webs by self-assembly process in the deionized water. Temperature-dependent conduct behavior reveals that electron transport of the graphene composite fibers belongs to hopping mechanism and the typical electrical conductivity reaches 4.59 × 10 3 S m -1 . These results demonstrated that the graphene composite fibers are promising for the next-generation flexible and wearable electronics.

Advances in silicon carbide Chemical Vapor Deposition (CVD) for semiconductor device fabrication

NASA Technical Reports Server (NTRS)

Powell, J. Anthony; Petit, Jeremy B.; Matus, Lawrence G.

1991-01-01

Improved SiC chemical vapor deposition films of both 3C and 6H polytypes were grown on vicinal (0001) 6H-SiC wafers cut from single-crystal boules. These films were produced from silane and propane in hydrogen at one atmosphere at a temperature of 1725 K. Among the more important factors which affected the structure and morphology of the grown films were the tilt angle of the substrate, the polarity of the growth surface, and the pregrowth surface treatment of the substrate. With proper pregrowth surface treatment, 6H films were grown on 6H substrates with tilt angles as small as 0.1 degrees. In addition, 3C could be induced to grow within selected regions on a 6H substrate. The polarity of the substrate was a large factor in the incorporation of dopants during epitaxial growth. A new growth model is discussed which explains the control of SiC polytype in epitaxial growth on vicinal (0001) SiC substrates.

Initiated chemical vapor deposited nanoadhesive for bonding National Ignition Facility's targets

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Tom

Currently, the target fabrication scientists in National Ignition Facility Directorate at Lawrence Livermore National Laboratory (LLNL) is studying the propagation force resulted from laser impulses impacting a target. To best study this, they would like the adhesive used to glue the target substrates to be as thin as possible. The main objective of this research project is to create adhesive glue bonds for NIF’s targets that are ≤ 1 μm thick. Polyglycidylmethacrylate (PGMA) thin films were coated on various substrates using initiated chemical vapor deposition (iCVD). Film quality studies using white light interferometry reveal that the iCVD PGMA films weremore » smooth. The coated substrates were bonded at 150 °C under vacuum, with low inflow of Nitrogen. Success in bonding most of NIF’s mock targets at thicknesses ≤ 1 μm indicates that our process is feasible in bonding the real targets. Key parameters that are required for successful bonding were concluded from the bonding results. They include inert bonding atmosphere, sufficient contact between the PGMA films, and smooth substrates. Average bond strength of 0.60 MPa was obtained from mechanical shearing tests. The bonding failure mode of the sheared interfaces was observed to be cohesive. Future work on this project will include reattempt to bond silica aerogel to iCVD PGMA coated substrates, stabilize carbon nanotube forests with iCVD PGMA coating, and kinetics study of PGMA thermal crosslinking.« less

Preparation Of Sources For Plasma Vapor Deposition

NASA Technical Reports Server (NTRS)

Waters, William J.; Sliney, Hal; Kowalski, D.

1993-01-01

Multicomponent metal targets serving as sources of vapor for plasma vapor deposition made in modified pressureless-sintering process. By use of targets made in modified process, one coats components with materials previously plasma-sprayed or sintered but not plasma-vapor-deposited.

Low Temperature Chemical Vapor Deposition Of Thin Film Magnets

DOEpatents

Miller, Joel S.; Pokhodnya, Kostyantyn I.

2003-12-09

A thin-film magnet formed from a gas-phase reaction of tetracyanoetheylene (TCNE) OR (TCNQ), 7,7,8,8-tetracyano-P-quinodimethane, and a vanadium-containing compound such as vanadium hexcarbonyl (V(CO).sub.6) and bis(benzene)vanalium (V(C.sub.6 H.sub.6).sub.2) and a process of forming a magnetic thin film upon at least one substrate by chemical vapor deposition (CVD) at a process temperature not exceeding approximately 90.degree. C. and in the absence of a solvent. The magnetic thin film is particularly suitable for being disposed upon rigid or flexible substrates at temperatures in the range of 40.degree. C. and 70.degree. C. The present invention exhibits air-stable characteristics and qualities and is particularly suitable for providing being disposed upon a wide variety of substrates.

Synthesis of high performance ceramic fibers by chemical vapor deposition for advanced metallics reinforcing

NASA Technical Reports Server (NTRS)

Revankar, Vithal; Hlavacek, Vladimir

1991-01-01

The chemical vapor deposition (CVD) synthesis of fibers capable of effectively reinforcing intermetallic matrices at elevated temperatures which can be used for potential applications in high temperature composite materials is described. This process was used due to its advantage over other fiber synthesis processes. It is extremely important to produce these fibers with good reproducible and controlled growth rates. However, the complex interplay of mass and energy transfer, blended with the fluid dynamics makes this a formidable task. The design and development of CVD reactor assembly and system to synthesize TiB2, CrB, B4C, and TiC fibers was performed. Residual thermal analysis for estimating stresses arising form thermal expansion mismatch were determined. Various techniques to improve the mechanical properties were also performed. Various techniques for improving the fiber properties were elaborated. The crystal structure and its orientation for TiB2 fiber is discussed. An overall view of the CVD process to develop CrB2, TiB2, and other high performance ceramic fibers is presented.

High pressure studies using two-stage diamond micro-anvils grown by chemical vapor deposition

DOE PAGES

Vohra, Yogesh K.; Samudrala, Gopi K.; Moore, Samuel L.; ...

2015-06-10

Ultra-high static pressures have been achieved in the laboratory using a two-stage micro-ball nanodiamond anvils as well as a two-stage micro-paired diamond anvils machined using a focused ion-beam system. The two-stage diamond anvils’ designs implemented thus far suffer from a limitation of one diamond anvil sliding past another anvil at extreme conditions. We describe a new method of fabricating two-stage diamond micro-anvils using a tungsten mask on a standard diamond anvil followed by microwave plasma chemical vapor deposition (CVD) homoepitaxial diamond growth. A prototype two stage diamond anvil with 300 μm culet and with a CVD diamond second stage ofmore » 50 μm in diameter was fabricated. We have carried out preliminary high pressure X-ray diffraction studies on a sample of rare-earth metal lutetium sample with a copper pressure standard to 86 GPa. Furthermore, the micro-anvil grown by CVD remained intact during indentation of gasket as well as on decompression from the highest pressure of 86 GPa.« less

Synthesis of Three-dimensional Polymer Nanostructures via Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Cheng, Kenneth

Chemical vapor deposition (CVD) is a widely practiced methodology for preparing thin film polymer coatings, and the coatings can be applied to a broad range of materials, including three-dimensional solid structures and low-vapor pressure liquids. Reactive poly(p-xylylene) (PPX) coatings prepared by CVD can be used as a powerful tool for surface functionalization and bio-conjugation. The first portion of this dissertation serves to extend the use of CVD-based reactive PPX coatings as a surface functionalization strategy for the conjugation of biomolecules. Micro-structured PPX coatings having multiple surface reactive groups were fabricated. Multiple orthogonal click reactions were then employed to selectively immobilize galactose and mannobiose to the micro-structured polymer coatings. The presence of different types of carbohydrate enables lectins binding for examining ligands/cell receptor interactions. This dissertation also demonstrates the use of CVD-based reactive PPX coatings as intermediate layers to immobilize adenoviral vectors onto tissue scaffolds. The ability to tether adenoviral vectors on tissue scaffolds localizes the transduction near the scaffold surface and reduces acute toxicity and hepatic pathology cause by direct administration of the viral vector, providing a safe and efficient gene therapy delivery strategy. In the second portion of this dissertation, we explore the CVD of PPX onto surfaces coated with a thin layer of liquid crystal (LC). Instead of forming a conformal PPX coating encapsulating the LC layer, PPX assembled into an array of high-aspect ratio nanofibers inside the LC layer. The LC layer was demonstrated to act as a template where the anisotropic internal ordering of the LC facilitated the formation of nanofibers. The diameter of the nanofibers was in the range of 100 nm and could be tuned by type of LC template used, and the length of the nanofibers could be precisely controlled by varying the thickness of the LC film. The

Electrical Performance of Monolayer MoS2 Field-Effect Transistors Prepared by Chemical Vapor Deposition

DTIC Science & Technology

2013-05-16

Furthermore, MoS2 also shows promise for use in logic circuits and optoelectronic devices, and it is a promising material for use on flexible and...onto an auxiliary silicon substrate and placed inside a tube furnace with the growth substrates surrounding it. Sulfur powder, placed upstream near the...opening of the furnace at an approximate temperature of 600 C, was subli- mated for use as the sulfur vapor source. The furnace was heated to a peak

Direct Metal Deposition of Refractory High Entropy Alloy MoNbTaW

NASA Astrophysics Data System (ADS)

Dobbelstein, Henrik; Thiele, Magnus; Gurevich, Evgeny L.; George, Easo P.; Ostendorf, Andreas

Alloying of refractory high entropy alloys (HEAs) such as MoNbTaW is usually done by vacuum arc melting (VAM) or powder metallurgy (PM) due to the high melting points of the elements. Machining to produce the final shape of parts is often needed after the PM process. Casting processes, which are often used for aerospace components (turbine blades, vanes), are not possible. Direct metal deposition (DMD) is an additive manufacturing technique used for the refurbishment of superalloy components, but generating these components from the bottom up is also of current research interest. MoNbTaW possesses high yield strength at high temperatures and could be an alternative to state-of-the-art materials. In this study, DMD of an equimolar mixture of elemental powders was performed with a pulsed Nd:YAG laser. Single wall structures were built, deposition strategies developed and the microstructure of MoNbTaW was analyzed by back scattered electrons (BSE) and energy dispersive X-ray (EDX) spectroscopy in a scanning electron microscope. DMD enables the generation of composition gradients by using dynamic powder mixing instead of pre-alloyed powders. However, the simultaneous handling of several elemental or pre-alloyed powders brings new challenges to the deposition process. The influence of thermal properties, melting point and vapor pressure on the deposition process and chemical composition will be discussed.

Making Ceramic Fibers By Chemical Vapor

NASA Technical Reports Server (NTRS)

Revankar, Vithal V. S.; Hlavacek, Vladimir

1994-01-01

Research and development of fabrication techniques for chemical vapor deposition (CVD) of ceramic fibers presented in two reports. Fibers of SiC, TiB2, TiC, B4C, and CrB2 intended for use as reinforcements in metal-matrix composite materials. CVD offers important advantages over other processes: fibers purer and stronger and processed at temperatures below melting points of constituent materials.

Photoreflectance study of the near-band-edge transitions of chemical vapor deposition-grown mono- and few-layer MoS{sub 2} films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lin, Kuang-I, E-mail: kilin@mail.ncku.edu.tw; Chen, Yen-Jen; Wang, Bo-Yan

2016-03-21

Room-temperature photoreflectance (PR) and reflectance (R) spectroscopy are utilized to investigate the near-band-edge transitions of molybdenum disulfide (MoS{sub 2}) thin films grown on sapphire substrates by a hot-wall chemical vapor deposition system. The layer thickness and optical properties of the MoS{sub 2} thin films are confirmed by Raman spectroscopy, atomic force microscope, and photoluminescence (PL) analysis. The B exciton shows relatively weak PL intensity in comparing with the A exciton even for monolayer MoS{sub 2} films. In the R spectrum of few‐layer MoS{sub 2}, it is not possible to clearly observe exciton related features. The PR spectra have two sharp,more » derivative-like features on a featureless background. Throughout the PR lineshape fitting, the transition energies are designated as the A and B excitons at the K-point of the Brillouin zone, but at room temperature there seems to be no distinguishable feature corresponding to an H‐point transition for the mono- and few-layer MoS{sub 2} films unlike in bulk. These transition energies are slightly larger than those obtained by PL, which is attributed to the Stokes shifts related to doping level. The obtained values of valence-band spin-orbit splitting are in good agreement with those from other experimental methods. By comparing the PR lineshapes, the dominant modulation mechanism is attributed to variations of the exciton transition energies due to change in the built-in electric field. On the strength of this study, PR spectroscopy is demonstrated as a powerful technique for characterizing the near-band-edge transitions of MoS{sub 2} from monolayer to bulk.« less

Characterization of Metalorganic Chemical Vapor Deposition

NASA Technical Reports Server (NTRS)

Jesser, W. A.

1998-01-01

A series of experimental and numerical investigations to develop a more complete understanding of the reactive fluid dynamics of chemical vapor deposition were conducted. In the experimental phases of the effort, a horizontal CVD reactor configuration was used for the growth of InP at UVA and for laser velocimetry measurements of the flow fields in the reactor at LaRC. This horizontal reactor configuration was developed for the growth of III-V semiconductors and has been used by our research group in the past to study the deposition of both GaAs and InP. While the ultimate resolution of many of the heat and mass transport issues will require access to a reduced-gravity environment, the series of groundbased research makes direct contributions to this area while attempting to answer the design questions for future experiments of how low must gravity be reduced and for how long must this gravity level be maintained to make the necessary measurements. It is hoped that the terrestrial experiments will be useful for the design of future microgravity experiments which likely will be designed to employ a core set of measurements for applications in the microgravity environment such as HOLOC, the Fluid Physics/Dynamics Facility, or the Schlieren photography, the Laser Imaging Velocimetry and the Laser Doppler Velocimetry instruments under development for the Advanced Fluids Experiment Module.

Characterization of thin film deposits on tungsten filaments in catalytic chemical vapor deposition using 1,1-dimethylsilacyclobutane

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shi, Yujun, E-mail: shiy@ucalgary.ca; Tong, Ling; Mulmi, Suresh

Metal filament plays a key role in the technique of catalytic chemical vapor deposition (Cat-CVD) as it serves as a catalyst in dissociating the source gas to form reactive species. These reactive species initiate the gas-phase reaction chemistry and final thin film and nanostructure formation. At the same time, they also react with the metal itself, leading to the formation of metal alloys and other deposits. The deposits on the tungsten filaments when exposed to 1,1-dimethylsilacyclobutane (DMSCB), a single-source precursor for silicon carbide thin films, in the process of Cat-CVD were studied in this work. It has been demonstrated thatmore » a rich variety of deposits, including tungsten carbides (W{sub 2}C and WC), tungsten silicide (W{sub 5}Si{sub 3}), silicon carbide, amorphous carbon, and graphite, form on the W filament surfaces. The structural and morphological changes in the tungsten filaments depend strongly on the DMSCB pressure and filament temperature. At 1000 and 2000 °C, the formation of WC and W{sub 2}C dominates. In addition, a thin amorphous carbon layer has been found at 1500 °C with the 0.12 and 0.24 Torr of DMSCB and a lower temperature of 1200 °C with the 0.48 Torr of DMSCB. An increase in the DMSCB sample pressure gives rise to higher Si and C contents. As a result, the formation of SiC and W{sub 5}Si{sub 3} has been observed with the two high-pressure DMSCB samples (i.e., 0.24 and 0.48 Torr). The rich decomposition chemistry of DMSCB on the W surfaces is responsible for the extensive changes in the structure of the W filament, providing support for the close relationship between the gas-phase decomposition chemistry and the nature of alloy formation on the metal surface. The understanding of the structural changes obtained from this work will help guide the development of efficient methods to solve the filament aging problem in Cat-CVD and also to achieve a controllable deposition process.« less

What controls deposition rate in electron-beam chemical vapor deposition?

PubMed

White, William B; Rykaczewski, Konrad; Fedorov, Andrei G

2006-08-25

The key physical processes governing electron-beam-assisted chemical vapor deposition are analyzed via a combination of theoretical modeling and supporting experiments. The scaling laws that define growth of the nanoscale deposits are developed and verified using carefully designed experiments of carbon deposition from methane onto a silicon substrate. The results suggest that the chamber-scale continuous transport of the precursor gas is the rate controlling process in electron-beam chemical vapor deposition.

High-efficiency solar cells fabricated by vacuum MO-CVD

NASA Technical Reports Server (NTRS)

Fraas, L. M.; Cape, J. A.; Partain, L. D.; Mcleod, P. S.

1984-01-01

High-efficiency, monolithic, two-color, three-terminal solar cells were fabricated by a novel growth technique, vacuum metal-organic chemical vapor deposition. The technique uses the expensive metal alkyls efficiently and toxic gases sparingly. The fact that the outer chamber is constructed of nonbreakable stainless steel is an attractive safety feature associated with this deposition system.

Vapor Deposition Rig

NASA Image and Video Library

2015-01-27

The Plasma Spray-Physical Vapor Deposition (PS-PVD) Rig at NASA Glenn Research Center. The rig helps develop coatings for next-generation aircraft turbine components and create more efficient engines.

The Oxidation of CVD Silicon Carbide in Carbon Dioxide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth J.; Nguyen, QuynchGiao N.

1997-01-01

Chemically-vapor-deposited silicon carbide (CVD SiC) was oxidized in carbon dioxide (CO2) at temperatures of 1200-1400 C for times between 100 and 500 hours at several gas flow rates. Oxidation weight gains were monitored by thermogravimetric analysis (TGA) and were found to be very small and independent of temperature. Possible rate limiting kinetic laws are discussed. Oxidation of SiC by CO2 is negligible compared to the rates measured for other oxidants typically found in combustion environments: oxygen and water vapor.

Fabrication of Nanocarbon Composites Using In Situ Chemical Vapor Deposition and Their Applications.

PubMed

He, Chunnian; Zhao, Naiqin; Shi, Chunsheng; Liu, Enzuo; Li, Jiajun

2015-09-23

Nanocarbon (carbon nanotubes (CNTs) and graphene (GN)) composites attract considerable research interest due to their fascinating applications in many fields. Here, recent developments in the field of in situ chemical vapor deposition (CVD) for the design and controlled preparation of advanced nanocarbon composites are highlighted, specifically, CNT-reinforced bulk structural composites, as well as CNT, GN, and CNT/GN functional composites, together with their practical and potential applications. In situ CVD is a very attractive approach for the fabrication of composites because of its engaging features, such as its simplicity, low-cost, versatility, and tunability. The morphologies, structures, dispersion, and interface of the resulting nanocarbon composites can be easily modulated by varying the experimental parameters (such as temperature, catalysts, carbon sources, templates or template catalysts, etc.), which enables a great potential for the in situ synthesis of high-quality nanocarbons with tailored size and dimension for constructing high-performance composites, which has not yet been achieved by conventional methods. In addition, new trends of the in situ CVD toward nanocarbon composites are discussed. © 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy.

PubMed

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M; Geohegan, David B; Xiao, Kai

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.

Two-dimensional GaSe/MoSe2 misfit bilayer heterojunctions by van der Waals epitaxy

PubMed Central

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; Huang, Bing; Puretzky, Alexander A.; Ma, Cheng; Wang, Kai; Zhou, Wu; Pantelides, Sokrates T.; Chi, Miaofang; Kravchenko, Ivan; Fowlkes, Jason; Rouleau, Christopher M.; Geohegan, David B.; Xiao, Kai

2016-01-01

Two-dimensional (2D) heterostructures hold the promise for future atomically thin electronics and optoelectronics because of their diverse functionalities. Although heterostructures consisting of different 2D materials with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) epitaxy, constructing heterostructures from layered semiconductors with large lattice misfits remains challenging. We report the growth of 2D GaSe/MoSe2 heterostructures with a large lattice misfit using two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientation between the two layers, forming a periodic superlattice. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe2 monolayer domains in lateral GaSe/MoSe2 heterostructures, GaSe monolayers are found to overgrow MoSe2 during CVD, forming a stripe of vertically stacked vdW heterostructures at the crystal interface. Such vertically stacked vdW GaSe/MoSe2 heterostructures are shown to form p-n junctions with effective transport and separation of photogenerated charge carriers between layers, resulting in a gate-tunable photovoltaic response. These GaSe/MoSe2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells. PMID:27152356

CVD-grown monolayer MoS2 in bioabsorbable electronics and biosensors.

PubMed

Chen, Xiang; Park, Yong Ju; Kang, Minpyo; Kang, Seung-Kyun; Koo, Jahyun; Shinde, Sachin M; Shin, Jiho; Jeon, Seunghyun; Park, Gayoung; Yan, Ying; MacEwan, Matthew R; Ray, Wilson Z; Lee, Kyung-Mi; Rogers, John A; Ahn, Jong-Hyun

2018-04-27

Transient electronics represents an emerging technology whose defining feature is an ability to dissolve, disintegrate or otherwise physically disappear in a controlled manner. Envisioned applications include resorbable/degradable biomedical implants, hardware-secure memory devices, and zero-impact environmental sensors. 2D materials may have essential roles in these systems due to their unique mechanical, thermal, electrical, and optical properties. Here, we study the bioabsorption of CVD-grown monolayer MoS 2 , including long-term cytotoxicity and immunological biocompatibility evaluations in biofluids and tissues of live animal models. The results show that MoS 2 undergoes hydrolysis slowly in aqueous solutions without adverse biological effects. We also present a class of MoS 2 -based bioabsorbable and multi-functional sensor for intracranial monitoring of pressure, temperature, strain, and motion in animal models. Such technology offers specific, clinically relevant roles in diagnostic/therapeutic functions during recovery from traumatic brain injury. Our findings support the broader use of 2D materials in transient electronics and qualitatively expand the design options in other areas.

Defect-mediated transport and electronic irradiation effect in individual domains of CVD-grown monolayer MoS 2

DOE PAGES

Durand, Corentin; Zhang, Xiaoguang; Fowlkes, Jason; ...

2015-01-16

We study the electrical transport properties of atomically thin individual crystalline grains of MoS 2 with four-probe scanning tunneling microscopy. The monolayer MoS 2 domains are synthesized by chemical vapor deposition on SiO 2/Si substrate. Temperature dependent measurements on conductance and mobility show that transport is dominated by an electron charge trapping and thermal release process with very low carrier density and mobility. The effects of electronic irradiation are examined by exposing the film to electron beam in the scanning electron microscope in an ultrahigh vacuum environment. The irradiation process is found to significantly affect the mobility and the carriermore » density of the material, with the conductance showing a peculiar time-dependent relaxation behavior. It is suggested that the presence of defects in active MoS 2 layer and dielectric layer create charge trapping sites, and a multiple trapping and thermal release process dictates the transport and mobility characteristics. The electron beam irradiation promotes the formation of defects and impact the electrical properties of MoS 2. Finally, our study reveals the important roles of defects and the electron beam irradiation effects in the electronic properties of atomic layers of MoS 2.« less

Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Raupp, Gregory B.

1993-01-01

The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

Initiated chemical vapor deposition of thermoresponsive poly(N-vinylcaprolactam) thin films for cell sheet engineering.

PubMed

Lee, Bora; Jiao, Alex; Yu, Seungjung; You, Jae Bem; Kim, Deok-Ho; Im, Sung Gap

2013-08-01

Poly(N-vinylcaprolactam) (PNVCL) is a thermoresponsive polymer known to be nontoxic, water soluble and biocompatible. Here, PNVCL homopolymer was successfully synthesized for the first time by use of a one-step vapor-phase process, termed initiated chemical vapor deposition (iCVD). Fourier transform infrared spectroscopy results showed that radical polymerization took place from N-vinylcaprolactam monomers without damaging the functional caprolactam ring. A sharp lower critical solution temperature transition was observed at 31°C from the iCVD poly(N-vinylcaprolactam) (PNVCL) film. The thermoresponsive PNVCL surface exhibited a hydrophilic/hydrophobic alteration with external temperature change, which enabled the thermally modulated attachment and detachment of cells. The conformal coverage of PNVCL film on various substrates with complex topography, including fabrics and nanopatterns, was successfully demonstrated, which can further be utilized to fabricate cell sheets with aligned cell morphology. The advantage of this system is that cells cultured on such thermoresponsive surfaces could be recovered as an intact cell sheet by simply lowering the temperature, eliminating the need for conventional enzymatic treatments. Copyright © 2013 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Development of CVD Diamond for Industrial Applications Final Report CRADA No. TC-2047-02

DOE Office of Scientific and Technical Information (OSTI.GOV)

Caplan, M.; Olstad, R.; Jory, H.

2017-09-08

This project was a collaborative effort to develop and demonstrate a new millimeter microwave assisted chemical vapor deposition(CVD) process for manufacturing large diamond disks with greatly reduced processing times and costs from those now available. In the CVD process, carbon based gases (methane) and hydrogen are dissociated into plasma using microwave discharge and then deposited layer by layer as polycrystalline diamond onto a substrate. The available low frequency (2.45GHz) microwave sources used elsewhere (De Beers) result in low density plasmas and low deposition rates: 4 inch diamond disks take 6-8 weeks to process. The new system developed in this projectmore » uses a high frequency 30GHz Gyrotron as the microwave source and a quasi-optical CVD chamber resulting in a much higher density plasma which greatly reduced the diamond processing times (1-2 weeks)« less

Surface functionalization of 3D-printed plastics via initiated chemical vapor deposition

PubMed Central

Cheng, Christine

2017-01-01

3D printing is a useful fabrication technique because it offers design flexibility and rapid prototyping. The ability to functionalize the surfaces of 3D-printed objects allows the bulk properties, such as material strength or printability, to be chosen separately from surface properties, which is critical to expanding the breadth of 3D printing applications. In this work, we studied the ability of the initiated chemical vapor deposition (iCVD) process to coat 3D-printed shapes composed of poly(lactic acid) and acrylonitrile butadiene styrene. The thermally insulating properties of 3D-printed plastics pose a challenge to the iCVD process due to large thermal gradients along the structures during processing. In this study, processing parameters such as the substrate temperature and the filament temperature were systematically varied to understand how these parameters affect the uniformity of the coatings along the 3D-printed objects. The 3D-printed objects were coated with both hydrophobic and hydrophilic polymers. Contact angle goniometry and X-ray photoelectron spectroscopy were used to characterize the functionalized surfaces. Our results can enable the use of iCVD to functionalize 3D-printed materials for a range of applications such as tissue scaffolds and microfluidics. PMID:28875099

Onset conditions for gas phase reaction and nucleation in the CVD of transition metal oxides

NASA Technical Reports Server (NTRS)

Collins, J.; Rosner, D. E.; Castillo, J.

1992-01-01

A combined experimental/theoretical study is presented of the onset conditions for gas phase reaction and particle nucleation in hot substrate/cold gas CVD of transition metal oxides. Homogeneous reaction onset conditions are predicted using a simple high activation energy reacting gas film theory. Experimental tests of the basic theory are underway using an axisymmetric impinging jet CVD reactor. No vapor phase ignition has yet been observed in the TiCl4/O2 system under accessible operating conditions (below substrate temperature Tw = 1700 K). The goal of this research is to provide CVD reactor design and operation guidelines for achieving acceptable deposit microstructures at the maximum deposition rate while simultaneously avoiding homogeneous reaction/nucleation and diffusional limitations.

The thickness effect of pre-deposited catalyst film on carbon nanotube growth by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Lowndes, Douglas H.

2001-03-01

Chemical vapor deposition (CVD) of multi wall carbon nanotubes (MWCNTs) was realized on a substrate with a layer of iron film used as a catalyst. The catalyst film was pre-deposited in an electron-gun evaporator equipped with a movable shutter which partially blocks the beam during the evaporation process to produce a catalyst film with a continuously changing thickness from 0 to 60 nm. This technique creates a growth environment in which the film thickness is the only variable and eliminates sample-to-sample variations, enabling a systematic study of the thickness effect of the catalyst film on CNT growth. After the deposition of the catalyst film, the sample was immediately transferred into a CVD chamber where CNT growth was performed. Using Acetylene (C_2H_2) as a carbon-source gas, at the substrate temperature of around 700^oC, MWCNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature from 640^oC to 800^oC. There appears to be no strong correlation between the film thickness and the diameter of the tubes. At the substrate temperature of over 900^oC, the deposited carbon formed graphite sheets surrounding the catalyst particles and no CNTs were observed. A plot of the critical thickness of the catalyst film where CNTs start to grow as a function of the substrate temperature has obtained, which can be served as a reference for selecting the growth parameter in MWCNT growth. The significance of these experimental trends is discussed within the framework of the diffusion model for MWCNT growth.

Controllable poly-crystalline bilayered and multilayered graphene film growth by reciprocal chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wu, Qinke; Jung, Seong Jun; Jang, Sung Kyu; Lee, Joohyun; Jeon, Insu; Suh, Hwansoo; Kim, Yong Ho; Lee, Young Hee; Lee, Sungjoo; Song, Young Jae

2015-06-01

We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for engineering the band structures of large-area graphene for electronic device applications.We report the selective growth of large-area bilayered graphene film and multilayered graphene film on copper. This growth was achieved by introducing a reciprocal chemical vapor deposition (CVD) process that took advantage of an intermediate h-BN layer as a sacrificial template for graphene growth. A thin h-BN film, initially grown on the copper substrate using CVD methods, was locally etched away during the subsequent graphene growth under residual H2 and CH4 gas flows. Etching of the h-BN layer formed a channel that permitted the growth of additional graphene adlayers below the existing graphene layer. Bilayered graphene typically covers an entire Cu foil with domain sizes of 10-50 μm, whereas multilayered graphene can be epitaxially grown to form islands a few hundreds of microns in size. This new mechanism, in which graphene growth proceeded simultaneously with h-BN etching, suggests a potential approach to control graphene layers for

CVD Growth of Carbon Nanotubes: Structure, Catalyst, and Growth

NASA Technical Reports Server (NTRS)

Delzeit, Lance

2003-01-01

Carbon nanotubes (CNTs) exhibit extraordinary mechanical and unique electronic properties and hence have been receiving much attention in recent years for their potential in nanoelectronics, field emission devices, scanning probes, high strength composites and many more applications. Catalytic decomposition of hydrocarbon feedstock with the aid of supported transition metal catalysts - also known as chemical vapor deposition (CVD) - has become popular to produce single-walled and multi-walled nanotubes (SWNTs, MWNTs) and multiwalled nanofibers (MWNFs). The ability to grow CNTs on patterned substrates and in vertically aligned arrays, and the simplicity of the process, has made CVD growth of CNTs an attractive approach.

Thermal barrier coatings on gas turbine blades: Chemical vapor deposition (Review)

NASA Astrophysics Data System (ADS)

Igumenov, I. K.; Aksenov, A. N.

2017-12-01

Schemes are presented for experimental setups (reactors) developed at leading scientific centers connected with the development of technologies for the deposition of coatings using the CVD method: at the Technical University of Braunschweig (Germany), the French Aerospace Research Center, the Materials Research Institute (Tohoku University, Japan) and the National Laboratory Oak Ridge (USA). Conditions and modes for obtaining the coatings with high operational parameters are considered. It is established that the formed thermal barrier coatings do not fundamentally differ in their properties (columnar microstructure, thermocyclic resistance, thermal conductivity coefficient) from standard electron-beam condensates, but the highest growth rates and the perfection of the crystal structure are achieved in the case of plasma-chemical processes and in reactors with additional laser or induction heating of a workpiece. It is shown that CVD reactors can serve as a basis for the development of rational and more advanced technologies for coating gas turbine blades that are not inferior to standard electron-beam plants in terms of the quality of produced coatings and have a much simpler and cheaper structure. The possibility of developing a new technology based on CVD processes for the formation of thermal barrier coatings with high operational parameters is discussed, including a set of requirements for industrial reactors, high-performance sources of vapor precursors, and promising new materials.

Vapor deposition of hardened niobium

DOEpatents

Blocher, Jr., John M.; Veigel, Neil D.; Landrigan, Richard B.

1983-04-19

A method of coating ceramic nuclear fuel particles containing a major amount of an actinide ceramic in which the particles are placed in a fluidized bed maintained at ca. 800.degree. to ca. 900.degree. C., and niobium pentachloride vapor and carbon tetrachloride vapor are led into the bed, whereby niobium metal is deposited on the particles and carbon is deposited interstitially within the niobium. Coating apparatus used in the method is also disclosed.

Composition and Morphology Control of Metal Dichalcogenides via Chemical Vapor Deposition for Photovoltaic and Nanoelectronic Applications

NASA Astrophysics Data System (ADS)

Samad, Leith L. J.

The body of work reviewed here encompasses a variety of metal dichalcogenides all synthesized using chemical vapor deposition (CVD) for solar and electronics applications. The first reported phase-pure CVD synthesis of iron pyrite thin films is presented with detailed structural and electrochemical analysis. The phase-pure thin film and improved crystal growth on a metallic backing material represents one of the best options for potential solar applications using iron pyrite. Large tin-sulfur-selenide solid solution plates with tunable bandgaps were also synthesized via CVD as single-crystals with a thin film geometry. Solid solution tin-sulfur-selenide plates were demonstrated to be a new material for solar cells with the first observed solar conversion efficiencies up to 3.1%. Finally, a low temperature molybdenum disulfide vertical heterostructure CVD synthesis with layered controlled growth was achieved with preferential growth enabled by Van der Waals epitaxy. Through recognition of additional reaction parameters, a fully regulated CVD synthesis enabled the controlled growth of 1-6 molybdenum disulfide monolayers for nanoelectronic applications. The improvements in synthesis and materials presented here were all enabled by the control afforded by CVD such that advances in phase purity, growth, and composition control of several metal dichalcogenides were achieved. Further work will be able to take full advantage of these advances for future solar and electronics technologies.

Effect of catalyst film thickness on carbon nanotube growth by selective area chemical vapor deposition

NASA Astrophysics Data System (ADS)

Wei, Y. Y.; Eres, Gyula; Merkulov, V. I.; Lowndes, D. H.

2001-03-01

The correlation between prepatterned catalyst film thickness and carbon nanotube (CNT) growth by selective area chemical vapor deposition (CVD) was studied using Fe and Ni as catalyst. To eliminate sample-to-sample variations and create a growth environment in which the film thickness is the sole variable, samples with continuously changing catalyst film thickness from 0 to 60 nm were fabricated by electron-gun evaporation. Using thermal CVD CNTs preferentially grow as a dense mat on the thin regions of the catalyst film. Moreover, beyond a certain critical film thickness no tubes were observed. The critical film thickness for CNT growth was found to increase with substrate temperature. There appears to be no strong correlation between the film thickness and the diameter of the tubes. In contrast, using plasma enhanced CVD with Ni as catalyst, vertically oriented CNTs grow in the entire range of catalyst film thickness. The diameter of these CNTs shows a strong correlation with the catalyst film thickness. The significance of these experimental trends is discussed within the framework of the diffusion model for CNT growth.

Fabrication of efficient planar perovskite solar cells using a one-step chemical vapor deposition method

PubMed Central

Tavakoli, Mohammad Mahdi; Gu, Leilei; Gao, Yuan; Reckmeier, Claas; He, Jin; Rogach, Andrey L.; Yao, Yan; Fan, Zhiyong

2015-01-01

Organometallic trihalide perovskites are promising materials for photovoltaic applications, which have demonstrated a rapid rise in photovoltaic performance in a short period of time. We report a facile one-step method to fabricate planar heterojunction perovskite solar cells by chemical vapor deposition (CVD), with a solar power conversion efficiency of up to 11.1%. We performed a systematic optimization of CVD parameters such as temperature and growth time to obtain high quality films of CH3NH3PbI3 and CH3NH3PbI3-xClx perovskite. Scanning electron microscopy and time resolved photoluminescence data showed that the perovskite films have a large grain size of more than 1 micrometer, and carrier life-times of 10 ns and 120 ns for CH3NH3PbI3 and CH3NH3PbI3-xClx, respectively. This is the first demonstration of a highly efficient perovskite solar cell using one step CVD and there is likely room for significant improvement of device efficiency. PMID:26392200

Influence of Alumina Reaction Tube Impurities on the Oxidation of Chemically-Vapor-Deposited Silicon Carbide

NASA Technical Reports Server (NTRS)

Opila, Elizabeth

1995-01-01

Pure coupons of chemically vapor deposited (CVD) SiC were oxidized for 100 h in dry flowing oxygen at 1300 C. The oxidation kinetics were monitored using thermogravimetry (TGA). The experiments were first performed using high-purity alumina reaction tubes. The experiments were then repeated using fused quartz reaction tubes. Differences in oxidation kinetics, scale composition, and scale morphology were observed. These differences were attributed to impurities in the alumina tubes. Investigators interested in high-temperature oxidation of silica formers should be aware that high-purity alumina can have significant effects on experiment results.

Porous tungsten prepared by atmospheric-pressure chemical vapor deposition with WF6 and its characterization

NASA Astrophysics Data System (ADS)

Li, Ying; Yu, Xiaodong; Tan, Chengwen; Wang, Fuchi; Ma, Honglei; Yue, Jintao

2017-05-01

Porous tungsten (W) is used in aeronautic and aerospace engineering, power electronics field and metallurgical industry. In this study, porous W with 98wt% W was prepared on a carbon foam substrate by atmospheric-pressure chemical vapor deposition (CVD) with tungsten fluoride (WF6) as the precursor. The porous W with 78.1346% porosity displayed a pure α-W phase and the uniform surface. The mode pore diameter of porous W is 208.0 µm. In a compression test, the fracture strength of porous W is 20.3 MPa.

Variability in Chemical Vapor Deposited Zinc Sulfide: Assessment of Legacy and International CVD ZnS Materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

McCloy, John S.; Korenstein, Ralph

2009-10-06

Samples of CVD ZnS from the United States, Germany, Israel, and China were evaluated using transmission spectroscopy, x-ray diffraction, photoluminescence, and biaxial flexure testing. Visible and near-infrared scattering, 6 μm absorption, and ultraviolet cut-on edge varied substantially in tested materials. Crystallographic hexagonality and texture was determined and correlated with optical scattering. Transmission cut-on (ultraviolet edge) blue-shifts with annealing and corresponds to visible color but not the 6 μm absorption. Photoluminescence results suggest that CVD ZnS exhibits a complex suite of electronic bandgap defects. All CVD ZnS tested with biaxial flexure exhibit similar fracture strength values and Weibull moduli. This surveymore » suggests that technical understanding of the structure and optical properties CVD ZnS is still in its infancy.« less

Vacuum vapor deposition

NASA Technical Reports Server (NTRS)

Poorman, Richard M. (Inventor); Weeks, Jack L. (Inventor)

1995-01-01

A method and apparatus is described for vapor deposition of a thin metallic film utilizing an ionized gas arc directed onto a source material spaced from a substrate to be coated in a substantial vacuum while providing a pressure differential between the source and the substrate so that, as a portion of the source is vaporized, the vapors are carried to the substrate. The apparatus includes a modified tungsten arc welding torch having a hollow electrode through which a gas, preferably inert, flows and an arc is struck between the electrode and the source. The torch, source, and substrate are confined within a chamber within which a vacuum is drawn. When the arc is struck, a portion of the source is vaporized and the vapors flow rapidly toward the substrate. A reflecting shield is positioned about the torch above the electrode and the source to ensure that the arc is struck between the electrode and the source at startup. The electrode and the source may be confined within a vapor guide housing having a duct opening toward the substrate for directing the vapors onto the substrate.

Development of CVD mullite coatings for Si-based ceramics

NASA Astrophysics Data System (ADS)

Auger, Michael Lawrence

1999-09-01

To raise fuel efficiencies, the next generation of engines and fuel systems must be lighter and operate at higher temperatures. Ceramic-based materials, which are considerably lighter than metals and can withstand working temperatures of up to 1400sp°C, have been targeted to replace traditional metal-based components. The materials used in combustion environments must also be capable of withstanding erosion and corrosion caused by combustion gases, particulates, and deposit-forming corrodants. With these demanding criteria, silicon-based ceramics are the leading candidate materials for high temperature engine and heat exchanger structural components. However, these materials are limited in gaseous environments and in the presence of molten salts since they form liquid silicates on exposed surfaces at temperatures as low as 800sp°C. Protective coatings that can withstand higher operating temperatures and corrosive atmospheres must be developed for silicon-based ceramics. Mullite (3Alsb2Osb3{*}2SiOsb2) was targeted as a potential coating material due to its unique ability to resist corrosion, retain its strength, resist creep, and avoid thermal shock failure at elevated temperatures. Several attempts to deposit mullite coatings by various processing methods have met with limited success and usually resulted in coatings that have had pores, cracks, poor adherence, and required thermal post-treatments. To overcome these deficiencies, the direct formation of chemically vapor deposited (CVD) mullite coatings has been developed. CVD is a high temperature atomistic deposition technique that results in dense, adherent crystalline coatings. The object of this dissertation was to further the understanding of the CVD mullite deposition process and resultant coating. The kinetics of CVD mullite deposition were investigated as a function of the following process parameters: temperature, pressure, and the deposition reactor system. An empirical kinetic model was developed

Chemical vapor deposition of Ta{sub 2}O{sub 5} corrosion resistant coatings

DOE Office of Scientific and Technical Information (OSTI.GOV)

Graham, D.W.; Stinton, D.P.

1992-12-31

Silicon carbide and silicon nitride heat engine components are susceptible to hot corrosion by molten Na{sub 2}SO{sub 4} which forms from impurities present in fuel and the environment. Chemically vapor deposited Ta{sub 2}O{sub 5} coatings are being developed as a means to protect components from reaction with these salts and preserve their structural properties. Investigations to optimize the structure of the coating have revealed that the deposition conditions dramatically affect the coating morphology. Coatings deposited at high temperatures are typically columnar in structure; high concentrations of the reactant gases produce oxide powders on the substrate surface. Ta{sub 2}O{sub 5} depositedmore » at low temperatures consists of grains that are finer and have significantly less porosity than that formed at high temperatures. Samples of coatings which have been produced by CVD have successfully completed preliminary testing for resistance to corrosion by Na{sub 2}SO{sub 4}.« less

Nanoscale arrays of antimony telluride single crystals by selective chemical vapor deposition

PubMed Central

Huang, Ruomeng; Benjamin, Sophie L.; Gurnani, Chitra; Wang, Yudong; Hector, Andrew L.; Levason, William; Reid, Gillian; De Groot, C. H. (Kees)

2016-01-01

Arrays of individual single nanocrystals of Sb2Te3 have been formed using selective chemical vapor deposition (CVD) from a single source precursor. Crystals are self-assembled reproducibly in confined spaces of 100 nm diameter with pitch down to 500 nm. The distribution of crystallite sizes across the arrays is very narrow (standard deviation of 15%) and is affected by both the hole diameter and the array pitch. The preferred growth of the crystals in the <1 1 0> orientation along the diagonal of the square holes strongly indicates that the diffusion of adatoms results in a near thermodynamic equilibrium growth mechanism of the nuclei. A clear relationship between electrical resistivity and selectivity is established across a range of metal selenides and tellurides, showing that conductive materials result in more selective growth and suggesting that electron donation is of critical importance for selective deposition. PMID:27283116

All-fiber Yb-doped fiber laser passively mode-locking by monolayer MoS2 saturable absorber

NASA Astrophysics Data System (ADS)

Zhang, Yue; Zhu, Jianqi; Li, Pingxue; Wang, Xiaoxiao; Yu, Hua; Xiao, Kun; Li, Chunyong; Zhang, Guangyu

2018-04-01

We report on an all-fiber passively mode-locked ytterbium-doped (Yb-doped) fiber laser with monolayer molybdenum disulfide (ML-MoS2) saturable absorber (SA) by three-temperature zone chemical vapor deposition (CVD) method. The modulation depth, saturation fluence, and non-saturable loss of this ML-MoS2 are measured to be 3.6%, 204.8 μJ/cm2 and 6.3%, respectively. Based on this ML-MoS2SA, a passively mode-locked Yb-doped fiber laser has been achieved at 979 nm with pulse duration of 13 ps and repetition rate of 16.51 MHz. A mode-locked fiber laser at 1037 nm is also realized with a pulse duration of 475 ps and repetition rate of 26.5 MHz. To the best of our knowledge, this is the first report that the ML-MoS2 SA is used in an all-fiber Yb-doped mode-locked fiber laser at 980 nm. Our work further points the excellent saturable absorption ability of ML-MoS2 in ultrafast photonic applications.

Photochemical CVD of Ru on functionalized self-assembled monolayers from organometallic precursors

NASA Astrophysics Data System (ADS)

Johnson, Kelsea R.; Arevalo Rodriguez, Paul; Brewer, Christopher R.; Brannaka, Joseph A.; Shi, Zhiwei; Yang, Jing; Salazar, Bryan; McElwee-White, Lisa; Walker, Amy V.

2017-02-01

Chemical vapor deposition (CVD) is an attractive technique for the metallization of organic thin films because it is selective and the thickness of the deposited film can easily be controlled. However, thermal CVD processes often require high temperatures which are generally incompatible with organic films. In this paper, we perform proof-of-concept studies of photochemical CVD to metallize organic thin films. In this method, a precursor undergoes photolytic decomposition to generate thermally labile intermediates prior to adsorption on the sample. Three readily available Ru precursors, CpRu(CO)2Me, (η3-allyl)Ru(CO)3Br, and (COT)Ru(CO)3, were employed to investigate the role of precursor quantum yield, ligand chemistry, and the Ru oxidation state on the deposition. To investigate the role of the substrate chemistry on deposition, carboxylic acid-, hydroxyl-, and methyl-terminated self-assembled monolayers were used. The data indicate that moderate quantum yields for ligand loss (φ ≥ 0.4) are required for ruthenium deposition, and the deposition is wavelength dependent. Second, anionic polyhapto ligands such as cyclopentadienyl and allyl are more difficult to remove than carbonyls, halides, and alkyls. Third, in contrast to the atomic layer deposition, acid-base reactions between the precursor and the substrate are more effective for deposition than nucleophilic reactions. Finally, the data suggest that selective deposition can be achieved on organic thin films by judicious choice of precursor and functional groups present on the substrate. These studies thus provide guidelines for the rational design of new precursors specifically for selective photochemical CVD on organic substrates.

Gaalas/Gaas Solar Cell Process Study

NASA Technical Reports Server (NTRS)

Almgren, D. W.; Csigi, K. I.

1980-01-01

Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A comparison of the basic cost elements of the epitaxy growth processes shows that the current infinite melt LPE process has the lower cost per cell for an annual production rate of 10,000 cells. The metal organic chemical vapor deposition (MO-CVD) process has the potential for low cost production of solar cells but there is currently a significant uncertainty in process yield, i.e., the fraction of active material in the input gas stream that ends up in the cell. Additional work is needed to optimize and document the process parameters for the MO-CVD process.

Conversion Coatings for Aluminum Alloys by Chemical Vapor Deposition Mechanisms

NASA Technical Reports Server (NTRS)

Reye, John T.; McFadden, Lisa S.; Gatica, Jorge E.; Morales, Wilfredo

2004-01-01

With the rise of environmental awareness and the renewed importance of environmentally friendly processes, the United States Environmental Protection Agency has targeted surface pre-treatment processes based on chromates. Indeed, this process has been subject to regulations under the Clean Water Act as well as other environmental initiatives, and there is today a marked movement to phase the process out in the near future. Therefore, there is a clear need for new advances in coating technology that could provide practical options for replacing present industrial practices. Depending on the final application, such coatings might be required to be resistant to corrosion, act as chemically resistant coatings, or both. This research examined a chemical vapor deposition (CVD) mechanism to deposit uniform conversion coatings onto aluminum alloy substrates. Robust protocols based on solutions of aryl phosphate ester and multi-oxide conversion coating (submicron) films were successfully grown onto the aluminum alloy samples. These films were characterized by X-ray Photoelectron Spectroscopy (XPS). Preliminary results indicate the potential of this technology to replace aqueous-based chromate processes.

Recent Results with CVD Diamond Trackers

NASA Astrophysics Data System (ADS)

Adam, W.; Bauer, C.; Berdermann, E.; Bergonzo, P.; Bogani, F.; Borchi, E.; Brambilla, A.; Bruzzi, M.; Colledani, C.; Conway, J.; Dabrowski, W.; Delpierre, P.; Deneuville, A.; Dulinski, W.; van Eijk, B.; Fallou, A.; Fizzotti, F.; Foulon, F.; Friedl, M.; Gan, K. K.; Gheeraert, E.; Grigoriev, E.; Hallewell, G.; Hall-Wilton, R.; Han, S.; Hartjes, F.; Hrubec, J.; Husson, D.; Kagan, H.; Kania, D.; Kaplon, J.; Karl, C.; Kass, R.; Knöpfle, K. T.; Krammer, M.; Logiudice, A.; Lu, R.; Manfredi, P. F.; Manfredotti, C.; Marshall, R. D.; Meier, D.; Mishina, M.; Oh, A.; Pan, L. S.; Palmieri, V. G.; Pernicka, M.; Peitz, A.; Pirollo, S.; Polesello, P.; Pretzl, K.; Procario, M.; Re, V.; Riester, J. L.; Roe, S.; Roff, D.; Rudge, A.; Runolfsson, O.; Russ, J.; Schnetzer, S.; Sciortino, S.; Speziali, V.; Stelzer, H.; Stone, R.; Suter, B.; Tapper, R. J.; Tesarek, R.; Trawick, M.; Trischuk, W.; Vittone, E.; Walsh, A. M.; Wedenig, R.; Weilhammer, P.; White, C.; Ziock, H.; Zoeller, M.; RD42 Collaboration

1999-08-01

We present recent results on the use of Chemical Vapor Deposition (CVD) diamond microstrip detectors for charged particle tracking. A series of detectors was fabricated using 1 x 1 cm 2 diamonds. Good signal-to-noise ratios were observed using both slow and fast readout electronics. For slow readout electronics, 2 μs shaping time, the most probable signal-to-noise ratio was 50 to 1. For fast readout electronics, 25 ns peaking time, the most probable signal-to-noise ratio was 7 to 1. Using the first 2 x 4 cm 2 diamond from a production CVD reactor with slow readout electronics, the most probable signal-to-noise ratio was 23 to 1. The spatial resolution achieved for the detectors was consistent with the digital resolution expected from the detector pitch.

Raman Enhancement and Photo-Bleaching of Organic Dyes in the Presence of Chemical Vapor Deposition-Grown Graphene.

PubMed

Weng, Jiaxin; Zhao, Shichao; Li, Zhiting; Ricardo, Karen B; Zhou, Feng; Kim, Hyojeong; Liu, Haitao

2017-10-19

Fluorescent organic dyes photobleach under intense light. Graphene has been shown to improve the photo-stability of organic dyes. In this paper, we investigated the Raman spectroscopy and photo-bleaching kinetics of dyes in the absence/presence of chemical vapor deposition (CVD)-grown graphene. We show that graphene enhances the Raman signal of a wide range of dyes. The photo-bleaching of the dyes was reduced when the dyes were in contact with graphene. In contrast, monolayer hexagonal boron nitride (h-BN) was much less effective in reducing the photo-bleaching rate of the dyes. We attribute the suppression of photo-bleaching to the energy or electron transfer from dye to graphene. The results highlight the potential of CVD graphene as a substrate for protecting and enhancing Raman response of organic dyes.

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE Office of Scientific and Technical Information (OSTI.GOV)

Li, Xufan; Lin, Ming-Wei; Lin, Junhao

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Two-dimensional GaSe/MoSe 2 misfit bilayer heterojunctions by van der Waals epitaxy

DOE PAGES

Li, Xufan; Lin, Ming-Wei; Lin, Junhao; ...

2016-04-01

Two-dimensional (2D) heterostructures hold the promise for future atomically-thin electronics and optoelectronics due to their diverse functionalities. While heterostructures consisting of different transition metal dichacolgenide monolayers with well-matched lattices and novel physical properties have been successfully fabricated via van der Waals (vdW) or edge epitaxy, constructing heterostructures from monolayers of layered semiconductors with large lattice misfits still remains challenging. Here, we report the growth of monolayer GaSe/MoSe 2 heterostructures with large lattice misfit by two-step chemical vapor deposition (CVD). Both vertically stacked and lateral heterostructures are demonstrated. The vertically stacked GaSe/MoSe 2 heterostructures exhibit vdW epitaxy with well-aligned lattice orientationmore » between the two layers, forming an incommensurate vdW heterostructure. However, the lateral heterostructures exhibit no lateral epitaxial alignment at the interface between GaSe and MoSe 2 crystalline domains. Instead of a direct lateral connection at the boundary region where the same lattice orientation is observed between GaSe and MoSe 2 monolayer domains in lateral GaSe/MoSe 2 heterostructures, GaSe monolayers are found to overgrow MoSe 2 during CVD, forming a stripe of vertically stacked vdW heterostructure at the crystal interface. Such vertically-stacked vdW GaSe/MoSe 2 heterostructures are shown to form p-n junctions with effective transport and separation of photo-generated charge carriers between layers, resulting in a gate-tunable photovoltaic response. In conclusion, these GaSe/MoSe 2 vdW heterostructures should have applications as gate-tunable field-effect transistors, photodetectors, and solar cells.« less

Correlating the optical properties of WS2 monolayers grown by CVD with isoelectronic Mo doping level(Conference Presentation)

NASA Astrophysics Data System (ADS)

Wang, Kai; Cross, Nick; Boulesbaa, Abdelaziz; Pudasaini, Pushpa R.; Tian, Mengkun; Mahjouri-Samani, Masoud; Oxley, Mark P.; Rouleau, Christopher M.; Puretzky, Alexander A.; Rack, Philip D.; Xiao, Kai; Yoon, Mina; Eres, Gyula; Duscher, Gerd; Geohegan, David B.

2017-02-01

Incorporating dopants in monolayer transition metal dichalcogenides (TMD) can enable manipulations of their electrical and optical properties. Previous attempts in amphoteric doping in monolayer TMDs have proven to be challenging. Here we report the incorporation of molybdenum (Mo) atoms in monolayer WS2 during growth by chemical vapor deposition, and correlate the distribution of Mo atoms with the optical properties including photoluminescence and ultrafast transient absorption dynamics. Dark field scanning transmission electron microscopy imaging quantified the isoelectronic doping of Mo in WS2 and revealed its gradual distribution along a triangular WS2 monolayer crystal, increasing from 0% at the edge to 2% in the center of the triangular WS2 triangular crystals. This agrees well with the Raman spectra data that showed two obvious modes between 360 cm-1 and 400 cm-1 that corresponded to MoS2 in the center. This in-plane gradual distribution of Mo in WS2 was found to account for the spatial variations in photoluminescence intensity and emission energy. Transition absorption spectroscopy further indicated that the incorporation of Mo in WS2 regulate the amplitude ratio of XA and XB of WS2. The effect of Mo incorporation on the electronic structure of WS2 was further elucidated by density functional theory. Finally, we compared the electrical properties of Mo incorporated and pristine WS2 monolayers by fabricating field-effect transistors. The isoelectronic doping of Mo in WS2 provides an alternative approach to engineer the bandgap and also enriches our understanding the influence of the doping on the excitonic dynamics.

Photoluminescence nonuniformity from self-seeding nuclei in CVD-grown monolayer MoSe2.

PubMed

Tian, Xiangling; Wei, Rongfei; Liu, Shanshan; Zhang, Yeming; Qiu, Jianrong

2018-01-03

We present optical spectroscopy (photoluminescence and Raman spectrum) studies of monolayer transition metal dichalcogenide MoSe 2 , with spatial location, temperature and excitation power dependence. The investigated spectra show location-dependent behavior with an increase in photoluminescence and Raman intensity and a blue-shift in photoluminescence peak position in the inner region. The observed behaviors of a large shift in the photoluminescence peak position at the edge and biexciton emissions in the inner region confirm that the monolayer MoSe 2 crystals grow from nucleation centers during the CVD process. Temperature activated energy and dependence of the peak position are attributed to residual oxygen during the growth. Investigating this information provides a basis for precisely controlling the synthesis of TMDCs and their application in advanced optoelectronics.

Atmospheric-Pressure Chemical Vapor Deposition of Iron Pyrite Thin Films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Berry, Nicholas; Cheng, Ming; Perkins, Craig L.

2012-10-23

Iron pyrite (cubic FeS{sub 2}) is a promising candidate absorber material for earth-abundant thin-film solar cells. In this report, single-phase, large-grain, and uniform polycrystalline pyrite thin films are fabricated on glass and molybdenum-coated glass substrates by atmospheric-pressure chemical vapor deposition (AP-CVD) using the reaction of iron(III) acetylacetonate and tert-butyl disulfide in argon at 300 C, followed by sulfur annealing at 500--550 C to convert marcasite impurities to pyrite. The pyrite-marcasite phase composition depends strongly on the concentration of sodium in the growth substrate and the sulfur partial pressure during annealing. Phase and elemental composition of the films are characterized bymore » X-ray diffraction, Raman spectroscopy, Auger electron spectroscopy, secondary ion mass spectrometry, Rutherford backscattering spectrometry, and X-ray photoelectron spectroscopy. The in-plane electrical properties are surprisingly insensitive to phase and elemental impurities, with all films showing p-type, thermally activated transport with a small activation energy ({approx}30 meV), a room- temperature resistivity of {approx}1 {Omega} cm, and low mobility. These ubiquitous electrical properties may result from robust surface effects. These CVD pyrite thin films are well suited to fundamental electrical studies and the fabrication of pyrite photovoltaic device stacks.« less

Modeling of InP metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

1991-01-01

The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

Physical Vapor Deposition of Thin Films

NASA Astrophysics Data System (ADS)

Mahan, John E.

2000-01-01

A unified treatment of the theories, data, and technologies underlying physical vapor deposition methods With electronic, optical, and magnetic coating technologies increasingly dominating manufacturing in the high-tech industries, there is a growing need for expertise in physical vapor deposition of thin films. This important new work provides researchers and engineers in this field with the information they need to tackle thin film processes in the real world. Presenting a cohesive, thoroughly developed treatment of both fundamental and applied topics, Physical Vapor Deposition of Thin Films incorporates many critical results from across the literature as it imparts a working knowledge of a variety of present-day techniques. Numerous worked examples, extensive references, and more than 100 illustrations and photographs accompany coverage of: * Thermal evaporation, sputtering, and pulsed laser deposition techniques * Key theories and phenomena, including the kinetic theory of gases, adsorption and condensation, high-vacuum pumping dynamics, and sputtering discharges * Trends in sputter yield data and a new simplified collisional model of sputter yield for pure element targets * Quantitative models for film deposition rate, thickness profiles, and thermalization of the sputtered beam

Chemical vapor deposition of mesoporous graphene nanoballs for supercapacitor.

PubMed

Lee, Jung-Soo; Kim, Sun-I; Yoon, Jong-Chul; Jang, Ji-Hyun

2013-07-23

A mass-producible mesoporous graphene nanoball (MGB) was fabricated via a precursor-assisted chemical vapor deposition (CVD) technique for supercapacitor application. Polystyrene balls and reduced iron created under high temperature and a hydrogen gas environment provide a solid carbon source and a catalyst for graphene growth during the precursor-assisted CVD process, respectively. Carboxylic acid and sulfonic acid functionalization of the polystyrene ball facilitates homogeneous dispersion of the hydrophobic polymer template in the metal precursor solution, thus, resulting in a MGB with a uniform number of graphene layers. The MGB is shown to have a specific surface area of 508 m(2)/g and is mesoporous with a mean mesopore diameter of 4.27 nm. Mesopores are generated by the removal of agglomerated iron domains, permeating down through the soft polystyrene spheres and providing the surface for subsequent graphene growth during the heating process in a hydrogen environment. This technique requires only drop-casting of the precursor/polystyrene solution, allowing for mass-production of multilayer MGBs. The supercapacitor fabricated by the use of the MGB as an electrode demonstrates a specific capacitance of 206 F/g and more than 96% retention of capacitance after 10,000 cycles. The outstanding characteristics of the MGB as an electrode for supercapacitors verify the strong potential for use in energy-related areas.

Surface-texture evolution of different chemical-vapor-deposited zinc sulfide flats polished with various magnetorheological fluids

DOE PAGES

Salzman, S.; Romanofsky, H. J.; Jacobs, S. D.; ...

2015-08-19

The macro-structure of chemical-vapor-deposited (CVD) zinc sulfide (ZnS) substrates is characterizedby cone-like structures that start growing at the early stages of deposition. As deposition progresses,these cones grow larger and reach centimeter size in height and millimeter size in width. It is challengingto polish out these features from the top layer, particularly for the magnetorheological finishing (MRF)process. A conventional MR fluid tends to leave submillimeter surface artifacts on the finished surface,which is a direct result of the cone-like structure. Here we describe the MRF process of polishing four CVD ZnS substrates, manufactured by four differentvendors, with conventional MR fluid at pHmore » 10 and zirconia-coated-CI (carbonyl iron) MR fluids at pH 4, 5,and 6. We report on the surface–texture evolution of the substrates as they were MRF polished with thedifferent fluids. We show that performances of the zirconia-coated-CI MR fluid at pH 4 are significantlyhigher than that of the same fluid at pH levels of 5 and 6 and moderately higher than that of a conventionalMR fluid at pH 10. An improvement in surface–texture variability from part to part was also observedwith the pH 4 MR fluid.« less

Chemical vapor deposition on chabazite (CHA) zeolite membranes for effective post-combustion CO2 capture.

PubMed

Kim, Eunjoo; Lee, Taehee; Kim, Hyungmin; Jung, Won-Jin; Han, Doug-Young; Baik, Hionsuck; Choi, Nakwon; Choi, Jungkyu

2014-12-16

Chabazite (CHA) zeolites with a pore size of 0.37 × 0.42 nm(2) are expected to separate CO2 (0.33 nm) from larger N2 (0.364 nm) in postcombustion flue gases by recognizing their minute size differences. Furthermore, the hydrophobic siliceous constituent in CHA membranes can allow for maintaining the CO2/N2 separation performance in the presence of H2O in contrast with the CO2 affinity-based membranes. In an attempt to increase the molecular sieving ability, the pore mouth size of all silica CHA (Si-CHA) particles was reduced via the chemical vapor deposition (CVD) of a silica precursor (tetraethyl orthosilicate). Accordingly, an increase of the CVD treatment duration decreased the penetration rate of CO2 into the CVD-treated Si-CHA particles. Furthermore, the CVD process was applied to siliceous CHA membranes in order to improve their CO2/N2 separation performance. Compared to the intact CHA membranes, the CO2/N2 maximum separation factor (max SF) for CVD-treated CHA membranes was increased by ∼ 2 fold under dry conditions. More desirably, the CO2/N2 max SF was increased by ∼ 3 fold under wet conditions at ∼ 50 °C, a representative temperature of the flue gas stream. In fact, the presence of H2O in the feed disfavored the permeation of N2 more than that of CO2 through CVD-modified CHA membranes and thus, contributed to the increased CO2/N2 separation factor.

Zinc Oxide Grown by CVD Process as Transparent Contact for Thin Film Solar Cell Applications

NASA Astrophysics Data System (ADS)

Faÿ, S.; Shah, A.

Metalorganic chemical vapor deposition of ZnO films (MOCVD) [1] started to be comprehensively investigated in the 1980s, when thin film industries were looking for ZnO deposition processes especially useful for large-scale coatings at high growth rates. Later on, when TCO for thin film solar cells started to be developed, another advantage of growing TCO films by the CVD process has been highlighted: the surface roughness. Indeed, a large number of studies on CVD ZnO revealed that an as-grown rough surface cn be obtained with this deposition process [2-4]. A rough surface induces a light scattering effect, which can significantly improve light trapping (and therefore current photo-generation) within thin film silicon solar cells. The CVD process, indeed, directly leads to as-grown rough ZnO films without any post-etching step (the latter is often introduced to obtain a rough surface, when working with as-deposited flat sputtered ZnO). This fact could turn out to be a significant advantage when upscaling the manufacturing process for actual commercial production of thin film solar modules. The zinc and oxygen sources for CVD growth of ZnO films are given in Table 6.1.

Aluminum Coating Influence on Nitride Layer Performance Deposited by MO-CVD in Fluidized Bed on Austenitic Stainless Steel Substrate

NASA Astrophysics Data System (ADS)

Găluşcă, D. G.; Perju, M. C.; Nejneru, C.; Burduhos Nergiş, D. D.; Lăzărescu, I. E.

2018-06-01

The modification of surface properties by duplex treatments, involving the overlapping of two surface treatment techniques, has been established as an intelligent solution to create new applications for the substrate metallic material. There are driveline components operating under very tough wear and corrosion conditions, with high temperature and humidity variations. Such components are usually made of high Cr and Ni stainless steel and for the hardening of surfaces it is recommended a thermo chemical treatment. Since stainless steels, especially austenitic stainless steels, are difficult to nitride, experimental studies focus on increasing the depth of the nitride layer and surface hardness. Achieving the goal involves changing active layer chemical composition by introducing aluminum in the surface layer. In order to find a solution, a new surface treatment technique is produced by combining aluminum thin films by MO-CVD in a fluidized bed using a triisobutylaluminum precursor with a thermo chemical nitriding treatment.

Contact-Engineered Electrical Properties of MoS2 Field-Effect Transistors via Selectively Deposited Thiol-Molecules.

PubMed

Cho, Kyungjune; Pak, Jinsu; Kim, Jae-Keun; Kang, Keehoon; Kim, Tae-Young; Shin, Jiwon; Choi, Barbara Yuri; Chung, Seungjun; Lee, Takhee

2018-05-01

Although 2D molybdenum disulfide (MoS 2 ) has gained much attention due to its unique electrical and optical properties, the limited electrical contact to 2D semiconductors still impedes the realization of high-performance 2D MoS 2 -based devices. In this regard, many studies have been conducted to improve the carrier-injection properties by inserting functional paths, such as graphene or hexagonal boron nitride, between the electrodes and 2D semiconductors. The reported strategies, however, require relatively time-consuming and low-yield transfer processes on sub-micrometer MoS 2 flakes. Here, a simple contact-engineering method is suggested, introducing chemically adsorbed thiol-molecules as thin tunneling barriers between the metal electrodes and MoS 2 channels. The selectively deposited thiol-molecules via the vapor-deposition process provide additional tunneling paths at the contact regions, improving the carrier-injection properties with lower activation energies in MoS 2 field-effect transistors. Additionally, by inserting thiol-molecules at the only one contact region, asymmetric carrier-injection is feasible depending on the temperature and gate bias. © 2018 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Measuring the Refractive Index of Highly Crystalline Monolayer MoS2 with High Confidence

PubMed Central

Zhang, Hui; Ma, Yaoguang; Wan, Yi; Rong, Xin; Xie, Ziang; Wang, Wei; Dai, Lun

2015-01-01

Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application. PMID:25676089

Measuring the refractive index of highly crystalline monolayer MoS2 with high confidence.

PubMed

Zhang, Hui; Ma, Yaoguang; Wan, Yi; Rong, Xin; Xie, Ziang; Wang, Wei; Dai, Lun

2015-02-13

Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application.

Measuring the Refractive Index of Highly Crystalline Monolayer MoS2 with High Confidence

NASA Astrophysics Data System (ADS)

Zhang, Hui; Ma, Yaoguang; Wan, Yi; Rong, Xin; Xie, Ziang; Wang, Wei; Dai, Lun

2015-02-01

Monolayer molybdenum disulphide (MoS2) has attracted much attention, due to its attractive properties, such as two-dimensional properties, direct bandgap, valley-selective circular dichroism, and valley Hall effect. However, some of its fundamental physical parameters, e.g. refractive index, have not been studied in detail because of measurement difficulties. In this work, we have synthesized highly crystalline monolayer MoS2 on SiO2/Si substrates via chemical vapor deposition (CVD) method and devised a method to measure their optical contrast spectra. Using these contrast spectra, we extracted the complex refractive index spectrum of monolayer MoS2 in the wavelength range of 400 nm to 750 nm. We have analyzed the pronounced difference between the obtained complex refractive index spectrum and that of bulk MoS2. The method presented here is effective for two-dimensional materials of small size. Furthermore, we have calculated the color contour plots of the contrast as a function of both SiO2 thickness and incident light wavelength for monolayer MoS2 using the obtained refractive index spectrum. These plots are useful for both fundamental study and device application.

A sub-atmospheric chemical vapor deposition process for deposition of oxide liner in high aspect ratio through silicon vias.

PubMed

Lisker, Marco; Marschmeyer, Steffen; Kaynak, Mehmet; Tekin, Ibrahim

2011-09-01

The formation of a Through Silicon Via (TSV) includes a deep Si trench etching and the formation of an insulating layer along the high-aspect-ratio trench and the filling of a conductive material into the via hole. The isolation of the filling conductor from the silicon substrate becomes more important for higher frequencies due to the high coupling of the signal to the silicon. The importance of the oxide thickness on the via wall isolation can be verified using electromagnetic field simulators. To satisfy the needs on the Silicon dioxide deposition, a sub-atmospheric chemical vapor deposition (SA-CVD) process has been developed to deposit an isolation oxide to the walls of deep silicon trenches. The technique provides excellent step coverage of the 100 microm depth silicon trenches with the high aspect ratio of 20 and more. The developed technique allows covering the deep silicon trenches by oxide and makes the high isolation of TSVs from silicon substrate feasible which is the key factor for the performance of TSVs for mm-wave 3D packaging.

Chemical vapor deposition of aluminum oxide

DOEpatents

Gordon, Roy; Kramer, Keith; Liu, Xinye

2000-01-01

An aluminum oxide film is deposited on a heated substrate by CVD from one or more alkylaluminum alkoxide compounds having composition R.sub.n Al.sub.2 (OR').sub.6-n, wherein R and R' are alkyl groups and n is in the range of 1 to 5.

iCVD Cyclic Polysiloxane and Polysilazane as Nanoscale Thin-Film Electrolyte: Synthesis and Properties.

PubMed

Chen, Nan; Reeja-Jayan, B; Liu, Andong; Lau, Jonathan; Dunn, Bruce; Gleason, Karen K

2016-03-01

A group of crosslinked cyclic siloxane (Si-O) and silazane (Si-N) polymers are synthesized via solvent-free initiated chemical vapor deposition (iCVD). Notably, this is the first report of cyclic polysilazanes synthesized via the gas-phase iCVD method. The deposited nanoscale thin films are thermally stable and chemically inert. By iCVD, they can uniformly and conformally cover nonplanar surfaces having complex geometry. Although polysiloxanes are traditionally utilized as dielectric materials and insulators, our research shows these cyclic organosilicon polymers can conduct lithium ions (Li(+) ) at room temperature. The conformal coating and the room temperature ionic conductivity make these cyclic organosilicon polymers attractive for use as thin-film electrolytes in solid-state batteries. Also, their synthesis process and properties have been systemically studied and discussed. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Vapor deposition of thin films

DOEpatents

Smith, David C.; Pattillo, Stevan G.; Laia, Jr., Joseph R.; Sattelberger, Alfred P.

1992-01-01

A highly pure thin metal film having a nanocrystalline structure and a process of preparing such highly pure thin metal films of, e.g., rhodium, iridium, molybdenum, tungsten, rhenium, platinum, or palladium by plasma assisted chemical vapor deposition of, e.g., rhodium(allyl).sub.3, iridium(allyl).sub.3, molybdenum(allyl).sub.4, tungsten(allyl).sub.4, rhenium(allyl).sub.4, platinum(allyl).sub.2, or palladium(allyl).sub.2 are disclosed. Additionally, a general process of reducing the carbon content of a metallic film prepared from one or more organometallic precursor compounds by plasma assisted chemical vapor deposition is disclosed.

Time dependent 14 MeV neutrons measurement using a polycrystalline chemical vapor deposited diamond detector at the JET tokamak

DOE Office of Scientific and Technical Information (OSTI.GOV)

Angelone, M.; Pillon, M.; Bertalot, L.

A polycrystalline chemical vapor deposited (CVD) diamond detector was installed on a JET tokamak in order to monitor the time dependent 14 MeV neutron emission produced by D-T plasma pulses during the Trace Tritium Experiment (TTE) performed in October 2003. This was the first tentative ever attempted to use a CVD diamond detector as neutron monitor in a tokamak environment. Despite its small active volume, the detector was able to detect the 14 MeV neutron emission (>1.0x10{sup 15} n/shot) with good reliability and stability during the experimental campaign that lasted five weeks. The comparison with standard silicon detectors presently usedmore » at JET as 14 MeV neutron monitors is reported, showing excellent correlation between the measurements. The results prove that CVD diamond detectors can be reliably used in a tokamak environment and therefore confirm the potential of this technology for next step machines like ITER.« less

Graphitized hollow carbon spheres and yolk-structured carbon spheres fabricated by metal-catalyst-free chemical vapor deposition

DOE PAGES

Li, Xufan; Chi, Miaofang; Mahurin, Shannon Mark; ...

2016-01-18

Hard-sphere-templating method has been widely used to synthesize hollow carbon spheres (HCSs), in which the spheres were firstly coated with a carbon precursor, followed by carbonization and core removal. The obtained HCSs are generally amorphous or weakly graphitized (with the help of graphitization catalysts). In this work, we report on the fabrication of graphitized HCSs and yolk–shell Au@HCS nanostructures using a modified templating method, in which smooth, uniform graphene layers were grown on SiO 2 spheres or Au@SiO 2 nanoparticles via metal-catalyst-free chemical vapor deposition (CVD) of methane. Furthermore, our work not only provides a new method to fabricate high-quality,more » graphitized HCSs but also demonstrates a reliable approach to grow quality graphene on oxide surfaces using CVD without the presence of metal catalysts.« less

An efficient synthesis of graphenated carbon nanotubes over the tailored mesoporous molecular sieves by chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Atchudan, R.; Department of Chemistry, CEG Campus, Anna University, Chennai 600025; Joo, Jin., E-mail: joojin@knu.ac.kr

2013-06-01

Highlights: ► Tailored 3D cubic Ni/KIT-6 with large pores was synthesized successfully. ► The new hybrid g-CNTs in large scale were synthesized using Ni/KIT-6 by CVD method. ► The use of mesoporous material by CVD method would be an ideal choice to prepare g-CNTs at reasonable cost. ► This type of g-CNTs might be a new avenue for nano-electronic applications. - Abstract: The new hybrid of graphenated carbon nanotubes (g-CNTs) was superior to either CNTs or graphene. Mesoporous 3D cubic Ni/KIT-6 were synthesized hydrothermally through organic template route and then were used as catalytic template for the production of g-CNTsmore » using acetylene as a carbon precursor by chemical vapor deposition (CVD) method. The deposited new hybrid carbon materials were purified and analyzed by various physico-chemical techniques such as XRD, TGA, SEM, TEM and Raman spectroscopy techniques. The graphitization of CNTs was confirmed by TGA and HRTEM studies. Thermal stability, surface morphology, and structural morphology of these materials were revealed by TGA, SEM and TEM analysis, respectively. Moreover, the tailored mesoporous Ni/KIT-6 molecular sieves were found to possess better quality and massive quantity of g-CNTs produced compared to other catalytic template route.« less

Chemical Vapor Deposition Synthesis of Graphene-Based Materials and Chemical Modulation of Graphene Electronics

NASA Astrophysics Data System (ADS)

Yan, Zheng

Graphene, a two-dimensional sp2-bonded carbon material, has attracted enormous attention due to its excellent electrical, optical and mechanical properties. Recently developed chemical vapor deposition (CVD) methods could produce large-size and uniform polycrystalline graphene films, limited to gas carbon sources, metal catalyst substrates and degraded properties induced by grain boundaries. Meanwhile, pristine monolayer graphene exhibits a standard ambipolar behavior with a zero neutrality point in field-effect transistors (FETs), limiting its future electronic applications. This thesis starts with the investigation of CVD synthesis of pristine and N-doped graphene with controlled thickness using solid carbon sources on metal catalyst substrates (chapter 1), and then discusses the direct growth of bilayer graphene on insulating substrates, including SiO2, h-BN, Si3N4 and Al2O3, without needing further transfer-process (chapter 2). Chapter 3 discusses the synthesis of high-quality graphene single crystals and hexagonal onion-ring-like graphene domains, and also explores the basic growth mechanism of graphene on Cu substrates. To extend graphene's potential applications, both vertical and planar graphene-carbon nanotube hybrids are fabricated using CVD method and their interesting properties are investigated (chapter 4). Chapter 5 discusses how to use chemical methods to modulate graphene's electronic behaviors.

Suitable alkaline for graphene peeling grown on metallic catalysts using chemical vapor deposition

NASA Astrophysics Data System (ADS)

Karamat, S.; Sonuşen, S.; Çelik, Ü.; Uysallı, Y.; Oral, A.

2016-04-01

In chemical vapor deposition, the higher growth temperature roughens the surface of the metal catalyst and a delicate method is necessary for the transfer of graphene from metal catalyst to the desired substrates. In this work, we grow graphene on Pt and Cu foil via ambient pressure chemical vapor deposition (AP-CVD) method and further alkaline water electrolysis was used to peel off graphene from the metallic catalyst. We used different electrolytes i.e., sodium hydroxide (NaOH), potassium hydroxide (KOH), lithium hydroxide (LiOH) and barium hydroxide Ba(OH)2 for electrolysis, hydrogen bubbles evolved at the Pt cathode (graphene/Pt/PMMA stack) and as a result graphene layer peeled off from the substrate without damage. The peeling time for KOH and LiOH was ∼6 min and for NaOH and Ba(OH)2 it was ∼15 min. KOH and LiOH peeled off graphene very efficiently as compared to NaOH and Ba(OH)2 from the Pt electrode. In case of copper, the peeling time is ∼3-5 min. Different characterizations like optical microscopy, Raman spectroscopy, X-ray photoelectron spectroscopy and atomic force microscopy were done to analyze the as grown and transferred graphene samples.

Patterned growth of carbon nanotubes obtained by high density plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Mousinho, A. P.; Mansano, R. D.

2015-03-01

Patterned growth of carbon nanotubes by chemical vapor deposition represents an assembly approach to place and orient nanotubes at a stage as early as when they are synthesized. In this work, the carbon nanotubes were obtained at room temperature by High Density Plasmas Chemical Vapor Deposition (HDPCVD) system. This CVD system uses a new concept of plasma generation, where a planar coil coupled to an RF system for plasma generation was used with an electrostatic shield for plasma densification. In this mode, high density plasmas are obtained. We also report the patterned growth of carbon nanotubes on full 4-in Si wafers, using pure methane plasmas and iron as precursor material (seed). Photolithography processes were used to pattern the regions on the silicon wafers. The carbon nanotubes were characterized by micro-Raman spectroscopy, the spectra showed very single-walled carbon nanotubes axial vibration modes around 1590 cm-1 and radial breathing modes (RBM) around 120-400 cm-1, confirming that high quality of the carbon nanotubes obtained in this work. The carbon nanotubes were analyzed by atomic force microscopy and scanning electron microscopy too. The results showed that is possible obtain high-aligned carbon nanotubes with patterned growth on a silicon wafer with high reproducibility and control.

Advanced zirconia-coated carbonyl-iron particles for acidic magnetorheological finishing of chemical-vapor-deposited ZnS and other IR materials

NASA Astrophysics Data System (ADS)

Salzman, S.; Giannechini, L. J.; Romanofsky, H. J.; Golini, N.; Taylor, B.; Jacobs, S. D.; Lambropoulos, J. C.

2015-10-01

We present a modified version of zirconia-coated carbonyl-iron (CI) particles that were invented at the University of Rochester in 2008. The amount of zirconia on the coating is increased to further protect the iron particles from corrosion when introduced to an acidic environment. Five low-pH, magnetorheological (MR) fluids were made with five acids: acetic, hydrochloric, nitric, phosphoric, and hydrofluoric. All fluids were based on the modified zirconia-coated CI particles. Off-line viscosity and pH stability were measured for all acidic MR fluids to determine the ideal fluid composition for acidic MR finishing of chemical-vapor-deposited (CVD) zinc sulfide (ZnS) and other infrared (IR) optical materials, such as hot-isostatic-pressed (HIP) ZnS, CVD zinc selenide (ZnSe), and magnesium fluoride (MgF2). Results show significant reduction in surface artifacts (millimeter-size, pebble-like structures on the finished surface) for several standard-grade CVD ZnS substrates and good surface roughness for the non-CVD MgF2 substrate when MR finished with our advanced acidic MR fluid.

Graphene Synthesis by Plasma-Enhanced CVD Growth with Ethanol

DOE PAGES

Campo, Teresa; Cotto, María; Márquez, Francisco; ...

2016-03-01

A modified route to synthesize graphene flakes is proposed using the Chemical Vapor Deposition (CVD) technique, by using copper substrates as supports. The carbon source used was ethanol, the synthesis temperature was 950°C and the pressure was controlled along the whole process. In this CVD synthesis process the incorporation of the carbon source was produced at low pressure and 950°C inducing the appearance of a plasma blue flash inside the quartz tube. Apparently, the presence of this plasma blue flash is required for obtaining graphene flakes. The synthesized graphene was characterized by different techniques, showing the presence of non-oxidized graphenemore » with high purity.« less

Atomic layer deposition of a MoS₂ film.

PubMed

Tan, Lee Kheng; Liu, Bo; Teng, Jing Hua; Guo, Shifeng; Low, Hong Yee; Tan, Hui Ru; Chong, Christy Yuen Tung; Yang, Ren Bin; Loh, Kian Ping

2014-09-21

A mono- to multilayer thick MoS₂ film has been grown by using the atomic layer deposition (ALD) technique at 300 °C on a sapphire wafer. ALD provides precise control of the MoS₂ film thickness due to pulsed introduction of the reactants and self-limiting reactions of MoCl₅ and H₂S. A post-deposition annealing of the ALD-deposited monolayer film improves the crystallinity of the film, which is evident from the presence of triangle-shaped crystals that exhibit strong photoluminescence in the visible range.

Fabrication and electrical properties of MoS2 nanodisc-based back-gated field effect transistors.

PubMed

Gu, Weixia; Shen, Jiaoyan; Ma, Xiying

2014-02-28

Two-dimensional (2D) molybdenum disulfide (MoS2) is an attractive alternative semiconductor material for next-generation low-power nanoelectronic applications, due to its special structure and large bandgap. Here, we report the fabrication of large-area MoS2 nanodiscs and their incorporation into back-gated field effect transistors (FETs) whose electrical properties we characterize. The MoS2 nanodiscs, fabricated via chemical vapor deposition (CVD), are homogeneous and continuous, and their thickness of around 5 nm is equal to a few layers of MoS2. In addition, we find that the MoS2 nanodisc-based back-gated field effect transistors with nickel electrodes achieve very high performance. The transistors exhibit an on/off current ratio of up to 1.9 × 105, and a maximum transconductance of up to 27 μS (5.4 μS/μm). Moreover, their mobility is as high as 368 cm2/Vs. Furthermore, the transistors have good output characteristics and can be easily modulated by the back gate. The electrical properties of the MoS2 nanodisc transistors are better than or comparable to those values extracted from single and multilayer MoS2 FETs.

Band Gap Engineering with Ultralarge Biaxial Strains in Suspended Monolayer MoS2.

PubMed

Lloyd, David; Liu, Xinghui; Christopher, Jason W; Cantley, Lauren; Wadehra, Anubhav; Kim, Brian L; Goldberg, Bennett B; Swan, Anna K; Bunch, J Scott

2016-09-14

We demonstrate the continuous and reversible tuning of the optical band gap of suspended monolayer MoS2 membranes by as much as 500 meV by applying very large biaxial strains. By using chemical vapor deposition (CVD) to grow crystals that are highly impermeable to gas, we are able to apply a pressure difference across suspended membranes to induce biaxial strains. We observe the effect of strain on the energy and intensity of the peaks in the photoluminescence (PL) spectrum and find a linear tuning rate of the optical band gap of 99 meV/%. This method is then used to study the PL spectra of bilayer and trilayer devices under strain and to find the shift rates and Grüneisen parameters of two Raman modes in monolayer MoS2. Finally, we use this result to show that we can apply biaxial strains as large as 5.6% across micron-sized areas and report evidence for the strain tuning of higher level optical transitions.

Flexible low-power RF nanoelectronics in the GHz regime using CVD MoS2

NASA Astrophysics Data System (ADS)

Yogeesh, Maruthi

Two-dimensional (2D) materials have attracted substantial interest for flexible nanoelectronics due to the overall device mechanical flexibility and thickness scalability for high mechanical performance and low operating power. In this work, we demonstrate the first MoS2 RF transistors on flexible substrates based on CVD-grown monolayers, featuring record GHz cutoff frequency (5.6 GHz) and saturation velocity (~1.8×106 cm/s), which is significantly superior to contemporary organic and metal oxide thin-film transistors. Furthermore, multicycle three-point bending results demonstrated the electrical robustness of our flexible MoS2 transistors after 10,000 cycles of mechanical bending. Additionally, basic RF communication circuit blocks such as amplifier, mixer and wireless AM receiver have been demonstrated. These collective results indicate that MoS2 is an ideal advanced semiconducting material for low-power, RF devices for large-area flexible nanoelectronics and smart nanosystems owing to its unique combination of large bandgap, high saturation velocity and high mechanical strength.

CO2-rich and CO2-poor ore-forming fluids of porphyry molybdenum systems in two contrasting geologic setting: evidence from Shapinggou and Zhilingtou Mo deposits, South China

NASA Astrophysics Data System (ADS)

Ni, P.

2017-12-01

Porphyry deposits are the world most important source of Mo, accounting for more than 95% of world Mo production. Porphyry Mo deposits have been classified into Climax type and Endako type. The Climax type was generally formed in an intra-continental setting, and contain high contents of Mo (0.15-0.45 wt.%) and F (0.5-5 wt.%). In contrast, the Endako type was generated in a continental arc setting and featured by low concentrations of Mo (0.05-0.15 wt.%) and F (0.05-0.15 wt.%). The systematic comparison of ore fluids in two contrasting tectonic environments is still poorly constrained. In this study, the Shapinggou and Zhilingtou Mo deposits in South China were selected to present the contrasting ore-forming fluid features. The fluid inclusion study of Shapinggou Mo deposit suggest: Early barren quartz veins contain fluid inclusions with salinities of 7.9-16.9 wt% NaCl equiv . CO2 contents are high enough to be detected by Raman. Later molybdenite-quartz veins contain vapor-type fluid inclusions with lower salinities (0.1-7.4 wt% NaCl equiv) but higher CO2-contents, coexisting with brine inclusions with 32.9-50.9 wt% NaCl equiv. The fluid inclusion study on Zhilintou Mo deposit suggest : Early barren quartz veins contain mostly intermediate density fluid inclusions with salinities of 5.3-14.1 wt% NaCl equiv, whereas main-stage quartz-molybdenite veins contain vapor-rich fluid inclusions of 0.5-6.2 wt% NaClequiv coexisting with brine inclusions of 38.6-44.8 wt% NaCl equiv. In contrast to the Shapinggou Mo deposit, the fluid inclusions at Shizitou contain only minor amounts of CO2. This study suggests the two porphyry molybdenum deposits experienced a similar fluid evolution trend, from single-phase fluids at the premineralization stage to two-phase fluids at the mineralization stage. Fluid boiling occurred during the ore stage and probably promoted a rapid precipitation of molybdenite. Intensive phyllic alteration, CO2-poor ore-forming fluids, and continental arc

Alternative group V precursors for CVD applications

NASA Astrophysics Data System (ADS)

Lum, R. M.; Klingert, J. K.

1991-01-01

The chemical vapor deposition (CVD) techniques used to grow III/V semiconductors films, such as metalorganic vapor phase epitaxy (MOVPE), hydride VPE, chemical beam epitaxy (CBE) and gas source molecular beam epitaxy (GS-MBE), all use hydrides (AsH 3 and PH 3) as the Group V source. However, the hydrides are extremely toxic gases which are stored under high pressure (200-2000 psi). To reduce the safety hazards associated with these gases, alternative Group V precursors have been investigated. Organoarsenic and phosphorous compounds have received the most attention as replacements for AsH 3 and PH 3 because they are typically low vapor pressure liquids, and thus present significantly lower exposure risks than the hydrides. For AsH 3 these have included the methyl, ethyl and butyl-based derivatives RnAsH 3- n, with varying degrees ( n = 1-3) of hydrogen atom substitution. In this paper the growth properties, thermochemistry and toxicity of the various alkylarsine precursors are compared with arsine. Data are presented on the impact of the thermochemistry of these compounds on film electrical properties, and on the effects of precursor composition and purity on overall film quality. The suitability of alternative As-precursors for device applications is demonstrated, and selection criteria are presented for the most effective alkylarsine compound for a particular CVD growth process.

Wafer-scale synthesis of monolayer and few-layer MoS2 via thermal vapor sulfurization

NASA Astrophysics Data System (ADS)

Robertson, John; Liu, Xue; Yue, Chunlei; Escarra, Matthew; Wei, Jiang

2017-12-01

Monolayer molybdenum disulfide (MoS2) is an atomically thin, direct bandgap semiconductor crystal potentially capable of miniaturizing optoelectronic devices to an atomic scale. However, the development of 2D MoS2-based optoelectronic devices depends upon the existence of a high optical quality and large-area monolayer MoS2 synthesis technique. To address this need, we present a thermal vapor sulfurization (TVS) technique that uses powder MoS2 as a sulfur vapor source. The technique reduces and stabilizes the flow of sulfur vapor, enabling monolayer wafer-scale MoS2 growth. MoS2 thickness is also controlled with great precision; we demonstrate the ability to synthesize MoS2 sheets between 1 and 4 layers thick, while also showing the ability to create films with average thickness intermediate between integer layer numbers. The films exhibit wafer-scale coverage and uniformity, with electrical quality varying depending on the final thickness of the grown MoS2. The direct bandgap of grown monolayer MoS2 is analyzed using internal and external photoluminescence quantum efficiency. The photoluminescence quantum efficiency is shown to be competitive with untreated exfoliated MoS2 monolayer crystals. The ability to consistently grow wafer-scale monolayer MoS2 with high optical quality makes this technique a valuable tool for the development of 2D optoelectronic devices such as photovoltaics, detectors, and light emitters.

A systematic study of atmospheric pressure chemical vapor deposition growth of large-area monolayer graphene.

PubMed

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Chen, Yu; Lin, Yung-Chen; Qu, Yongquan; Bai, Jingwei; Ivanov, Ivan A; Liu, Gang; Huang, Yu; Duan, Xiangfeng

2012-01-28

Graphene has attracted considerable interest as a potential material for future electronics. Although mechanical peel is known to produce high quality graphene flakes, practical applications require continuous graphene layers over a large area. The catalyst-assisted chemical vapor deposition (CVD) is a promising synthetic method to deliver wafer-sized graphene. Here we present a systematic study on the nucleation and growth of crystallized graphene domains in an atmospheric pressure chemical vapor deposition (APCVD) process. Parametric studies show that the mean size of the graphene domains increases with increasing growth temperature and CH 4 partial pressure, while the density of domains decreases with increasing growth temperature and is independent of the CH 4 partial pressure. Our studies show that nucleation of graphene domains on copper substrate is highly dependent on the initial annealing temperature. A two-step synthetic process with higher initial annealing temperature but lower growth temperature is developed to reduce domain density and achieve high quality full-surface coverage of monolayer graphene films. Electrical transport measurements demonstrate that the resulting graphene exhibits a high carrier mobility of up to 3000 cm 2 V -1 s -1 at room temperature.

Low Temperature Metal Free Growth of Graphene on Insulating Substrates by Plasma Assisted Chemical Vapor Deposition

PubMed Central

Muñoz, R.; Munuera, C.; Martínez, J. I.; Azpeitia, J.; Gómez-Aleixandre, C.; García-Hernández, M.

2016-01-01

Direct growth of graphene films on dielectric substrates (quartz and silica) is reported, by means of remote electron cyclotron resonance plasma assisted chemical vapor deposition r-(ECR-CVD) at low temperature (650°C). Using a two step deposition process- nucleation and growth- by changing the partial pressure of the gas precursors at constant temperature, mostly monolayer continuous films, with grain sizes up to 500 nm are grown, exhibiting transmittance larger than 92% and sheet resistance as low as 900 Ω·sq-1. The grain size and nucleation density of the resulting graphene sheets can be controlled varying the deposition time and pressure. In additon, first-principles DFT-based calculations have been carried out in order to rationalize the oxygen reduction in the quartz surface experimentally observed. This method is easily scalable and avoids damaging and expensive transfer steps of graphene films, improving compatibility with current fabrication technologies. PMID:28070341

Graphene-based quantum Hall resistance standards grown by chemical vapor deposition on silicon carbide

NASA Astrophysics Data System (ADS)

Ribeiro-Palau, Rebeca; Lafont, Fabien; Kazazis, Dimitris; Michon, Adrien; Couturaud, Olivier; Consejo, Christophe; Jouault, Benoit; Poirier, Wilfrid; Schopfer, Felicien

2015-03-01

Replace GaAs-based quantum Hall resistance standards (GaAs-QHRS) by a more convenient one, based on graphene (Gr-QHRS), is an ongoing goal in metrology. The new Gr-QHRS are expected to work in less demanding experimental conditions than GaAs ones. It will open the way to a broad dissemination of quantum standards, potentially towards industrial end-users, and it will support the implementation of a new International System of Units based on fixed fundamental constants. Here, we present accurate quantum Hall resistance measurements in large graphene Hall bars, grown by the hybrid scalable technique of propane/hydrogen chemical vapor deposition (CVD) on silicon carbide (SiC). This new Gr-QHRS shows a relative accuracy of 1 ×10-9 of the Hall resistance under the lowest magnetic field ever achieved in graphene. These experimental conditions surpass those of the most wildely used GaAs-QHRS. These results confirm the promises of graphene for resistance metrology applications and emphasizes the quality of the graphene produced by the CVD on SiC for applications as demanding as the resistance metrology.

High-speed deposition of titanium carbide coatings by laser-assisted metal–organic CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Gong, Yansheng; Tu, Rong, E-mail: turong@whut.edu.cn; Goto, Takashi

2013-08-01

Graphical abstract: - Highlights: • A semiconductor laser was first used to prepare wide-area LCVD-TiC{sub x} coatings. • The effect of laser power for the deposition of TiC{sub x} coatings was discussed. • TiC{sub x} coatings showed a columnar cross section and a dense surface texture. • TiC{sub x} coatings had a 1–4 order lower laser density than those of previous reports. • This study gives the possibility of LCVD applying on the preparation of TiC{sub x} coating. - Abstract: A semiconductor laser-assisted chemical vapor deposition (LCVD) of titanium carbide (TiC{sub x}) coatings on Al{sub 2}O{sub 3} substrate using tetrakismore » (diethylamido) titanium (TDEAT) and C{sub 2}H{sub 2} as source materials were investigated. The influences of laser power (P{sub L}) and pre-heating temperature (T{sub pre}) on the microstructure and deposition rate of TiC{sub x} coatings were examined. Single phase of TiC{sub x} coatings were obtained at P{sub L} = 100–200 W. TiC{sub x} coatings had a cauliflower-like surface and columnar cross section. TiC{sub x} coatings in the present study had the highest R{sub dep} (54 μm/h) at a relative low T{sub dep} than those of conventional CVD-TiC{sub x} coatings. The highest volume deposition rate (V{sub dep}) of TiC{sub x} coatings was about 4.7 × 10{sup −12} m{sup 3} s{sup −1}, which had 3–10{sup 5} times larger deposition area and 1–4 order lower laser density than those of previous LCVD using CO{sub 2}, Nd:YAG and argon ion laser.« less

Environmentally Resistant Mo-Si-B-Based Coatings

NASA Astrophysics Data System (ADS)

Perepezko, J. H.; Sossaman, T. A.; Taylor, M.

2017-06-01

High-temperature applications have demonstrated aluminide-coated nickel-base superalloys to be remarkably effective, but are reaching their service limit. Alternate materials such as refractory (e.g., W, Mo) silicide alloys and SiC composites are being considered to extend high temperature capability, but the silica surfaces on these materials require coatings for enhanced environmental resistance. This can be accomplished with a Mo-Si-B-based coating that is deposited by a spray deposition of Mo followed by a chemical vapor deposition of Si and B by pack cementation to develop an aluminoborosilica surface. Oxidation of the as-deposited (Si + B)-pack coatings proceeds with partial consumption of the initial MoSi2 forming amorphous silica. This Si depletion leads to formation of a B-saturated Mo5Si3 (T1) phase. Reactions between the Mo and the B rich phases develop an underlying Mo5SiB2 (T2) layer. The T1 phase saturated with B has robust oxidation resistance, and the Si depletion is prevented by the underlying diffusion barrier (T2). Further, due to the natural phase transformation characteristics of the Mo-Si-B system, cracks or scratches to the outer silica and T1 layers can be repaired from the Si and B reservoirs of T2 + MoB layer to yield a self-healing characteristic. Mo-Si-B-based coatings demonstrate robust performance up to at least 1700 °C not only to the rigors of elevated temperature oxidation, but also to CMAS attack, hot corrosion attack, water vapor and thermal cycling.

Method and apparatus for conducting variable thickness vapor deposition

DOEpatents

Nesslage, G.V.

1984-08-03

A method of vapor depositing metal on a substrate in variable thickness comprises conducting the deposition continuously without interruption to avoid formation of grain boundaries. To achieve reduced deposition in specific regions a thin wire or ribbon blocking body is placed between source and substrate to partially block vapors from depositing in the region immediately below.

CVD growth of large-area and high-quality HfS2 nanoforest on diverse substrates

NASA Astrophysics Data System (ADS)

Zheng, Binjie; Wang, Zegao; Qi, Fei; Wang, Xinqiang; Yu, Bo; Zhang, Wanli; Chen, Yuanfu

2018-03-01

Two-dimensional layered transition metal dichalcogenides (TMDs) have attracted burgeoning attention due to their various properties and wide potential applications. As a new TMD, hafnium disulfide (HfS2) is theoretically predicted to have better electrical performance than widely studied MoS2. The experimental researches also confirmed the extraordinary feature in electronics and optoelectronics. However, the maximal device performance may not be achieved due to its own limitation of planar structure and challenge of transfer without contamination. Here, through the chemical vapor deposition (CVD) technique, inch-size HfS2 nanoforest has been directly grown on diverse objective substrates covering insulating, semiconducting and conducting substrates. This direct CVD growth without conventional transfer process avoids contamination and degradation in quality, suggesting its promising and wide applications in high-quality and multifarious devices. It is noted that all the HfS2 nanoforests grown on diverse substrates are constructed with vertically aligned few-layered HfS2 nanosheets with high crystalline quality and edge orientation. Moreover, due to its unique structure, the HfS2 nanoforest owns abundant exposed edge sites and large active surface area, which is essential to apply in high-performance catalyst, sensor, and energy storage or field emitter.

Controlled p-doping of black phosphorus by integration of MoS2 nanoparticles

NASA Astrophysics Data System (ADS)

Jeon, Sumin; Kim, Minwoo; Jia, Jingyuan; Park, Jin-Hong; Lee, Sungjoo; Song, Young Jae

2018-05-01

Black phosphorus (BP), a new family of two dimensional (2D) layered materials, is an attractive material for future electronic, photonic and chemical sensing devices, thanks to its high carrier density and a direct bandgap of 0.3-2.0 eV, depending on the number of layers. Controllability over the properties of BP by electrical or chemical modulations is one of the critical requirements for future various device applications. Herein, we report a new doping method of BP by integration of density-controlled monolayer MoS2 nanoparticles (NPs). MoS2 NPs with different density were synthesized by chemical vapor deposition (CVD) and transferred onto a few-layer BP channel, which induced a p-doping effect. Scanning electron microscopy (SEM) confirmed the size and distribution of MoS2 NPs with different density. Raman and X-ray photoelectron spectroscopy (XPS) were measured to confirm the oxidation on the edge of MoS2 NPs and a doping effect of MoS2 NPs on a BP channel. The doping mechanism was explained by a charge transfer by work function differences between BP and MoS2 NPs, which was confirmed by Kelvin probe force microscopy (KPFM) and electrical measurements. The hole concentration of BP was controlled with different densities of MoS2 NPs in a range of 1012-1013 cm-2.

Influence of Gas Adsorption and Gold Nanoparticles on the Electrical Properties of CVD-Grown MoS2 Thin Films.

PubMed

Cho, Yunae; Sohn, Ahrum; Kim, Sujung; Hahm, Myung Gwan; Kim, Dong-Ho; Cho, Byungjin; Kim, Dong-Wook

2016-08-24

Molybdenum disulfide (MoS2) has increasingly attracted attention from researchers and is now one of the most intensively explored atomic-layered two-dimensional semiconductors. Control of the carrier concentration and doping type of MoS2 is crucial for its application in electronic and optoelectronic devices. Because the MoS2 layers are atomically thin, their transport characteristics may be very sensitive to ambient gas adsorption and the resulting charge transfer. We investigated the influence of the ambient gas (N2, H2/N2, and O2) choice on the resistance (R) and surface work function (WF) of trilayer MoS2 thin films grown via chemical vapor deposition. We also studied the electrical properties of gold (Au)-nanoparticle (NP)-coated MoS2 thin films; their R value was found to be 2 orders of magnitude smaller than that for bare samples. While the WF largely varied for each gas, R was almost invariant for both the bare and Au-NP-coated samples regardless of which gas was used. Temperature-dependent transport suggests that variable range hopping is the dominant mechanism for electrical conduction for bare and Au-NP-coated MoS2 thin films. The charges transferred from the gas adsorbates might be insufficient to induce measurable R change and/or be trapped in the defect states. The smaller WF and larger localization length of the Au-NP-coated sample, compared with the bare sample, suggest that more carriers and less defects enhanced conduction in MoS2.

CVD of silicon carbide on structural fibers - Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

CVD of silicon carbide on structural fibers: Microstructure and composition

NASA Technical Reports Server (NTRS)

Veitch, Lisa C.; Terepka, Francis M.; Gokoglu, Suleyman A.

1992-01-01

Structural fibers are currently being considered as reinforcements for intermetallic and ceramic materials. Some of these fibers, however, are easily degraded in a high temperature oxidative environment. Therefore, coatings are needed to protect the fibers from environmental attack. Silicon carbide (SiC) was chemically vapor deposited (CVD) on Textron's SCS6 fibers. Fiber temperatures ranging from 1350 to 1500 C were studied. Silane (SiH4) and propane (C2H8) were used for the source gases and different concentrations of these source gases were studied. Deposition rates were determined for each group of fibers at different temperatures. Less variation in deposition rates were observed for the dilute source gas experiments than the concentrated source gas experiments. A careful analysis was performed on the stoichiometry of the CVD SiC coating using electron microprobe. Microstructures for the different conditions were compared. At 1350 C, the microstructures were similar; however, at higher temperatures, the microstructure for the more concentrated source gas group were porous and columnar in comparison to the cross sections taken from the same area for the dilute source gas group.

Growth of InAs NWs with controlled morphology by CVD

NASA Astrophysics Data System (ADS)

Huang, Y. S.; Li, M.; Wang, J.; Xing, Y.; Xu, H. Q.

2017-06-01

We report on the growth of single crystal InAs NWs on Si/SiOx substrates by chemical vapor deposition (CVD). By adjusting growth parameters, the diameters, morphology, length and the proportion of superlattice ZB InAs NWs (NWs) can be controlled on a Si/SiOx substrate. Our work provides a low-cost route to grow and phase-engineer single crystal InAs NWs for a wide range of potential applications.

Spray CVD for Making Solar-Cell Absorber Layers

NASA Technical Reports Server (NTRS)

Banger, Kulbinder K.; Harris, Jerry; Jin, Michael H.; Hepp, Aloysius

2007-01-01

Spray chemical vapor deposition (spray CVD) processes of a special type have been investigated for use in making CuInS2 absorber layers of thin-film solar photovoltaic cells from either of two subclasses of precursor compounds: [(PBu3) 2Cu(SEt)2In(SEt)2] or [(PPh3)2Cu(SEt)2 In(SEt)2]. The CuInS2 films produced in the experiments have been characterized by x-ray diffraction, scanning electron microscopy, energy-dispersive spectroscopy, and four-point-probe electrical tests.

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

DTIC Science & Technology

2016-04-27

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical... vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...peer-reviewed journals: Number of Papers published in non peer-reviewed journals: Final Report: Hybrid Physical Vapor Deposition Instrument for Advanced

CVD-Enabled Graphene Manufacture and Technology

PubMed Central

2015-01-01

Integrated manufacturing is arguably the most challenging task in the development of technology based on graphene and other 2D materials, particularly with regard to the industrial demand for “electronic-grade” large-area films. In order to control the structure and properties of these materials at the monolayer level, their nucleation, growth and interfacing needs to be understood to a level of unprecedented detail compared to existing thin film or bulk materials. Chemical vapor deposition (CVD) has emerged as the most versatile and promising technique to develop graphene and 2D material films into industrial device materials and this Perspective outlines recent progress, trends, and emerging CVD processing pathways. A key focus is the emerging understanding of the underlying growth mechanisms, in particular on the role of the required catalytic growth substrate, which brings together the latest progress in the fields of heterogeneous catalysis and classic crystal/thin-film growth. PMID:26240694

Chemical vapor deposition: Stable carbons from low-rank coals

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, R.K.; Kulas, R.W.; Olson, E.S.

1996-12-31

A chemical vapor deposition (CVD) technique has been used to increase the oxidative stability of activated carbons. Activated carbons prepared from Gascoyne lignite (North Dakota) by thermal or potassium hydroxide activations were subjected to BCI, in helium at 727{degrees}C with or without benzene for a limited period of time, followed by annealing in helium at 900{degrees}C for three days. Untreated and acid-washed coal samples were used to assess the magnitude of the effect of mineral matter in the coal on the boron coating. The oxidative stability of the boron-modified carbons was determined from the decomposition curves obtained from the thermogravimetricmore » analysis. Modification of the as-received, KOH-treated carbon yielded oxidatively stable carbons up to an initial temperature of 520{degrees}C, compared to about 350{degrees}C for the starting material. Similar results were obtained for the carbonized Gascoyne lignite. Sulfurous acid washing of the Gascoyne significantly enhanced the thermal stability (600{degrees}C) of the boron-modified carbon.« less

Calculation of residual principal stresses in CVD boron on carbon filaments

NASA Technical Reports Server (NTRS)

Behrendt, D. R.

1980-01-01

A three-dimensional finite element model of the chemical vapor deposition (CVD) of boron on a carbon substrate (B/C) is developed. The model includes an expansion of the boron after deposition due to atomic rearrangement and includes creep of the boron and carbon. Curves are presented to show how the principal residual stresses and the filament elongation vary as the parameters defining deposition strain and creep are varied. The calculated results are compared with experimental axial residual stress and elongation measurements made on B/C filaments. This comparison requires that for good agreement between calculated and experimental results, the deposited boron must continue to expand after deposition, and that the build-up of residual stresses is limited by significant boron and carbon creep rates.

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE PAGES

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo; ...

2017-02-27

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Chemical Vapor-Deposited Hexagonal Boron Nitride as a Scalable Template for High-Performance Organic Field-Effect Transistors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Lee, Tae Hoon; Kim, Kwanpyo; Kim, Gwangwoo

Organic field-effect transistors have attracted much attention because of their potential use in low-cost, large-area, flexible electronics. High-performance organic transistors require a low density of grain boundaries in their organic films and a decrease in the charge trap density at the semiconductor–dielectric interface for efficient charge transport. In this respect, the role of the dielectric material is crucial because it primarily determines the growth of the film and the interfacial trap density. Here, we demonstrate the use of chemical vapor-deposited hexagonal boron nitride (CVD h-BN) as a scalable growth template/dielectric for high-performance organic field-effect transistors. The field-effect transistors based onmore » C60 films grown on single-layer CVD h-BN exhibit an average mobility of 1.7 cm 2 V –1 s –1 and a maximal mobility of 2.9 cm 2 V –1 s –1 with on/off ratios of 10 7. The structural and morphology analysis shows that the epitaxial, two-dimensional growth of C 60 on CVD h-BN is mainly responsible for the superior charge transport behavior. In conclusion, we believe that CVD h-BN can serve as a growth template for various organic semiconductors, allowing the development of large-area, high-performance flexible electronics.« less

Structural Characterization of Vapor-deposited Organic Glasses

NASA Astrophysics Data System (ADS)

Gujral, Ankit

Physical vapor deposition, a common route of thin film fabrication for organic electronic devices, has recently been shown to produce organic glassy films with enhanced kinetic stability and anisotropic structure. Anisotropic structures are of interest in the organic electronics community as it has been shown that certain structures lead to enhanced device performance, such as higher carrier mobility and better light outcoupling. A mechanism proposed to explain the origin of the stability and anisotropy of vapor-deposited glasses relies on two parameters: 1) enhanced molecular mobility at the free surface (vacuum interface) of a glass, and 2) anisotropic molecular packing at the free surface of the supercooled liquid of the glass-forming system. By vapor-depositing onto a substrate maintained at Tsubstrate < Tg (where Tg is the glass transition temperature), the enhanced molecular mobility at the free surface allows every molecule that lands on the surface to at least partially equilibrate to the preferred anisotropic molecular packing motifs before being buried by further deposition. The extent of equilibration depends on the mobility at the surface, controlled by Tsubstrate, and the residence time on the free surface, controlled by the rate of deposition. This body of work deals with the optimization of deposition conditions and system chemistry to prepare and characterize films with functional anisotropic structures. Here, we show that structural anisotropy can be attained for a variety of molecular systems including a rod-shaped non-mesogen, TPD, a rod-shaped smectic mesogen, itraconazole, two discotic mesogens, phenanthroperylene-ester and triphenylene-ester, and a disc-shaped non-mesogen, m-MTDATA. Experimental evidence is also provided of the anisotropic molecular packing at the free surface (vacuum interface) for the disc-shaped systems that are consistent with the expectations of the proposed mechanism and the final bulk state of the vapor-deposited

CVD diamond substrate for microelectronics. Final report

DOE Office of Scientific and Technical Information (OSTI.GOV)

Burden, J.; Gat, R.

1996-11-01

Chemical Vapor Deposition (CVD) of diamond films has evolved dramatically in recent years, and commercial opportunities for diamond substrates in thermal management applications are promising. The objective of this technology transfer initiative (TTI) is for Applied Science and Technology, Inc. (ASTEX) and AlliedSignal Federal Manufacturing and Technologies (FM&T) to jointly develop and document the manufacturing processes and procedures required for the fabrication of multichip module circuits using CVD diamond substrates, with the major emphasis of the project concentrating on lapping/polishing prior to metallization. ASTEX would provide diamond films for the study, and FM&T would use its experience in lapping, polishing,more » and substrate metallization to perform secondary processing on the parts. The primary goal of the project was to establish manufacturing processes that lower the manufacturing cost sufficiently to enable broad commercialization of the technology.« less

Desalination by Membrane Distillation using Electrospun Polyamide Fiber Membranes with Surface Fluorination by Chemical Vapor Deposition.

PubMed

Guo, Fei; Servi, Amelia; Liu, Andong; Gleason, Karen K; Rutledge, Gregory C

2015-04-22

Fibrous membranes of poly(trimethyl hexamethylene terephthalamide) (PA6(3)T) were fabricated by electrospinning and rendered hydrophobic by applying a conformal coating of poly(1H,1H,2H,2H-perfluorodecyl acrylate) (PPFDA) using initiated chemical vapor deposition (iCVD). A set of iCVD-treated electrospun PA6(3)T fiber membranes with fiber diameters ranging from 0.25 to 1.8 μm were tested for desalination using the air gap membrane distillation configuration. Permeate fluxes of 2-11 kg/m2/h were observed for temperature differentials of 20-45 °C between the feed stream and condenser plate, with rejections in excess of 99.98%. The liquid entry pressure was observed to increase dramatically, from 15 to 373 kPa with reduction in fiber diameter. Contrary to expectation, for a given feed temperature the permeate flux was observed to increase for membranes of decreasing fiber diameter. The results for permeate flux and salt rejection show that it is possible to construct membranes for membrane distillation even from intrinsically hydrophilic materials after surface modification by iCVD and that the fiber diameter is shown to play an important role on the membrane distillation performance in terms of permeate flux, salt rejection, and liquid entry pressure.

Ultratough CVD single crystal diamond and three dimensional growth thereof

DOEpatents

Hemley, Russell J [Washington, DC; Mao, Ho-kwang [Washington, DC; Yan, Chih-shiue [Washington, DC

2009-09-29

The invention relates to a single-crystal diamond grown by microwave plasma chemical vapor deposition that has a toughness of at least about 30 MPa m.sup.1/2. The invention also relates to a method of producing a single-crystal diamond with a toughness of at least about 30 MPa m.sup.1/2. The invention further relates to a process for producing a single crystal CVD diamond in three dimensions on a single crystal diamond substrate.

Chemical vapor deposition of silicon, silicon dioxide, titanium and ferroelectric thin films

NASA Astrophysics Data System (ADS)

Chen, Feng

Various silicon-based thin films (such as epitaxial, polycrystalline and amorphous silicon thin films, silicon dioxide thin films and silicon nitride thin films), titanium thin film and various ferroelectric thin films (such as BaTiO3 and PbTiO3 thin films) play critical roles in the manufacture of microelectronics circuits. For the past few years, there have been tremendous interests to search for cheap, safe and easy-to-use methods to develop those thin films with high quality and good step coverage. Silane is a critical chemical reagent widely used to deposit silicon-based thin films. Despite its wide use, silane is a dangerous material. It is pyrophoric, extremely flammable and may explode from heat, shock and/or friction. Because of the nature of silane, serious safety issues have been raised concerning the use, transportation, and storage of compressed gas cylinders of silane. Therefore it is desired to develop safer ways to deposit silicon-based films. In chapter III, I present the results of our research in the following fields: (1) Silane generator, (2) Substitutes of silane for deposition of silicon and silicon dioxide thin films, (3) Substitutes of silane for silicon dioxide thin film deposition. In chapter IV, hydropyridine is introduced as a new ligand for use in constructing precursors for chemical vapor deposition. Detachement of hydropyridine occurs by a low-temperature reaction leaving hydrogen in place of the hydropyridine ligands. Hydropyridine ligands can be attached to a variety of elements, including main group metals, such as aluminum and antimony, transition metals, such as titanium and tantalum, semiconductors such as silicon, and non-metals such as phosphorus and arsenic. In this study, hydropyridine-containing titanium compounds were synthesized and used as chemical vapor deposition precursors for deposition of titanium containing thin films. Some other titanium compounds were also studied for comparison. In chapter V, Chemical Vapor

Ion beam figuring of CVD silicon carbide mirrors

NASA Astrophysics Data System (ADS)

Gailly, P.; Collette, J.-P.; Fleury Frenette, K.; Jamar, C.

2017-11-01

Optical and structural elements made of silicon carbide are increasingly found in space instruments. Chemical vapor deposited silicon carbide (CVD-SiC) is used as a reflective coating on SiC optics in reason of its good behavior under polishing. The advantage of applying ion beam figuring (IBF) to CVD-SiC over other surface figure-improving techniques is discussed herein. The results of an IBF sequence performed at the Centre Spatial de Liège on a 100 mm CVD-SiC mirror are reported. The process allowed to reduce the mirror surface errors from 243 nm to 13 nm rms . Beside the surface figure, roughness is another critical feature to consider in order to preserve the optical quality of CVD-SiC . Thus, experiments focusing on the evolution of roughness were performed in various ion beam etching conditions. The roughness of samples etched at different depths down to 3 ≠m was determined with an optical profilometer. These measurements emphasize the importance of selecting the right combination of gas and beam energy to keep roughness at a low level. Kaufman-type ion sources are generally used to perform IBF but the performance of an end-Hall ion source in figuring CVD-SiC mirrors was also evaluated in this study. In order to do so, ion beam etching profiles obtained with the end-Hall source on CVD-SiC were measured and used as a basis for IBF simulations.

Chemical vapor deposition growth

NASA Technical Reports Server (NTRS)

Ruth, R. P.; Manasevit, H. M.; Johnson, R. E.; Kenty, J. L.; Moudy, L. A.; Simpson, W. I.; Yang, J. J.

1976-01-01

A laboratory type CVD reactor system with a vertical deposition chamber and sample pedestal heated by an external RF coil has been extensively modified by installation of mass flow controllers, automatic process sequence timers, and special bellows-sealed air-operated valves for overall improved performance. Various film characterization procedures, including classical metallography, SEM analyses, X ray diffraction analyses, surface profilometry, and electrical measurements (resistivity, carrier concentration, mobility, spreading resistance profiles, and minority-carrier lifetime by the C-V-t method) area used to correlate Si sheet properties with CVD parameters and substrate properties. Evaluation procedures and measurements are given. Experimental solar cell structures were made both in epitaxial Si sheet (on sapphire substrates) and in polycrystalline material on alumina substrates, the former to provide an indication of what might be an upper limit on performance of the latter. Preliminary results are given, as obtained in cell structures not specially designed to allow for the unique properties of the sheet material, and fabricated in material known to be far from optimum for photovoltaic performance. Low power conversion efficiencies have been obtained in the epitaxial as well as the polycrystalline Si sheet.

Single liquid source plasma-enhanced metalorganic chemical vapor deposition of high-quality YBa2Cu3O(7-x) thin films

NASA Technical Reports Server (NTRS)

Zhang, Jiming; Gardiner, Robin A.; Kirlin, Peter S.; Boerstler, Robert W.; Steinbeck, John

1992-01-01

High quality YBa2Cu3O(7-x) films were grown in-situ on LaAlO3 (100) by a novel single liquid source plasma-enhanced metalorganic chemical vapor deposition process. The metalorganic complexes M(thd) (sub n), (thd = 2,2,6,6-tetramethyl-3,5-heptanedionate; M = Y, Ba, Cu) were dissolved in an organic solution and injected into a vaporizer immediately upstream of the reactor inlet. The single liquid source technique dramatically simplifies current CVD processing and can significantly improve the process reproducibility. X-ray diffraction measurements indicated that single phase, highly c-axis oriented YBa2Cu3O(7-x) was formed in-situ at substrate temperature 680 C. The as-deposited films exhibited a mirror-like surface, had transition temperature T(sub cO) approximately equal to 89 K, Delta T(sub c) less than 1 K, and Jc (77 K) = 10(exp 6) A/sq cm.

Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Haven, Victor E.

1999-01-01

Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

Evaluating electrically insulating films deposited on V-4% Cr-4% Ti by reactive CVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Park, J.H.; Cho, W.D.

1997-04-01

Previous CaO coatings on V-4%Cr-4%Ti exhibited high-ohmic insulator behavior even though a small amount of vanadium from the alloy was incorporated in the coating. However, when the vanadium concentration in the coatings is > 15 wt%, the coating becomes conductive. When the vanadium concentration is high in localized areas, a calcium vanadate phase that exhibits semiconductor behavior can form. To explore this situation, CaO and Ca-V-O coatings were produced on vanadium alloys by chemical vapor deposition (CVD) and by a metallic-vapor process to investigate the electrical resistance of the coatings. Initially, the vanadium alloy specimens were either charged with oxygenmore » in argon that contained trace levels of oxygen, or oxidized for 1.5-3 h in a 1% CO-CO{sub 2} gas mixture or in air to form vanadium oxide at 625-650{degrees}C. Most of the specimens were exposed to calcium vapor at 800-850{degrees}C. Initial and final weights were obtained to monitor each step, and surveillance samples were removed for examination by optical and scanning electron microscopy and electron-energy-dispersive and X-ray diffraction analysis; the electrical resistivity was also measured. The authors found that Ca-V-O films exhibited insulator behavior when the ratio of calcium concentration to vanadium concentration R in the film was > 0.9, and semiconductor or conductor behavior for R < 0.8. However, in some cases, semiconductor behavior was observed when CaO-coated samples with R > 0.98 were exposed in liquid lithium. Based on these studies, the authors conclude that semiconductor behavior occurs if a conductive calcium vanadate phase is present in localized regions in the CaO coating.« less

Chemical-Vapor Deposition Of Silicon Carbide

NASA Technical Reports Server (NTRS)

Cagliostro, D. E.; Riccitiello, S. R.; Ren, J.; Zaghi, F.

1993-01-01

Report describes experiments in chemical-vapor deposition of silicon carbide by pyrolysis of dimethyldichlorosilane in hydrogen and argon carrier gases. Directed toward understanding chemical-kinetic and mass-transport phenomena affecting infiltration of reactants into, and deposition of SiC upon, fabrics. Part of continuing effort to develop method of efficient and more nearly uniform deposition of silicon carbide matrix throughout fabric piles to make improved fabric/SiC-matrix composite materials.

Mechanism of high growth rate for diamond-like carbon films synthesized by helicon wave plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Peiyu, JI; Jun, YU; Tianyuan, HUANG; Chenggang, JIN; Yan, YANG; Lanjian, ZHUGE; Xuemei, WU

2018-02-01

A high growth rate fabrication of diamond-like carbon (DLC) films at room temperature was achieved by helicon wave plasma chemical vapor deposition (HWP-CVD) using Ar/CH4 gas mixtures. The microstructure and morphology of the films were characterized by Raman spectroscopy and scanning electron microscopy. The diagnosis of plasma excited by a helicon wave was measured by optical emission spectroscopy and a Langmuir probe. The mechanism of high growth rate fabrication for DLC films by HWP-CVD has been discussed. The growth rate of the DLC films reaches a maximum value of 54 μm h-1 at the CH4 flow rate of 85 sccm, which is attributed to the higher plasma density during the helicon wave plasma discharge. The CH and H α radicals play an important role in the growth of DLC films. The results show that the H α radicals are beneficial to the formation and stabilization of C=C bond from sp2 to sp3.

Polymer Encapsulation of an Amorphous Pharmaceutical by initiated Chemical Vapor Deposition for Enhanced Stability

PubMed Central

2016-01-01

The usage of amorphous solids in practical applications, such as in medication, is commonly limited by the poor long-term stability of this state, because unwanted crystalline transitions occur. In this study, three different polymeric coatings are investigated for their ability to stabilize amorphous films of the model drug clotrimazole and to protect against thermally induced transitions. For this, drop cast films of clotrimazole are encapsulated by initiated chemical vapor deposition (iCVD), using perfluorodecyl acrylate (PFDA), hydroxyethyl methacrylate (HEMA), and methacrylic acid (MAA). The iCVD technique operates under solvent-free conditions at low temperatures, thus leaving the solid state of the encapsulated layer unaffected. Optical microscopy and X-ray diffraction data reveal that at ambient conditions of about 22 °C, any of these iCVD layers extends the lifetime of the amorphous state significantly. At higher temperatures (50 or 70 °C), the p-PFDA coating is unable to provide protection, while the p-HEMA and p-MAA strongly reduce the crystallization rate. Furthermore, p-HEMA and p-MAA selectively facilitate a preferential alignment of clotrimazole and, interestingly, even suppress crystallization upon a temporary, rapid temperature increase (3 °C/min, up to 150 °C). The results of this study demonstrate how a polymeric coating, synthesized directly on top of an amorphous phase, can act as a stabilizing agent against crystalline transitions, which makes this approach interesting for a variety of applications. PMID:27467099

Polymer Encapsulation of an Amorphous Pharmaceutical by initiated Chemical Vapor Deposition for Enhanced Stability.

PubMed

Christian, Paul; Ehmann, Heike M A; Coclite, Anna Maria; Werzer, Oliver

2016-08-24

The usage of amorphous solids in practical applications, such as in medication, is commonly limited by the poor long-term stability of this state, because unwanted crystalline transitions occur. In this study, three different polymeric coatings are investigated for their ability to stabilize amorphous films of the model drug clotrimazole and to protect against thermally induced transitions. For this, drop cast films of clotrimazole are encapsulated by initiated chemical vapor deposition (iCVD), using perfluorodecyl acrylate (PFDA), hydroxyethyl methacrylate (HEMA), and methacrylic acid (MAA). The iCVD technique operates under solvent-free conditions at low temperatures, thus leaving the solid state of the encapsulated layer unaffected. Optical microscopy and X-ray diffraction data reveal that at ambient conditions of about 22 °C, any of these iCVD layers extends the lifetime of the amorphous state significantly. At higher temperatures (50 or 70 °C), the p-PFDA coating is unable to provide protection, while the p-HEMA and p-MAA strongly reduce the crystallization rate. Furthermore, p-HEMA and p-MAA selectively facilitate a preferential alignment of clotrimazole and, interestingly, even suppress crystallization upon a temporary, rapid temperature increase (3 °C/min, up to 150 °C). The results of this study demonstrate how a polymeric coating, synthesized directly on top of an amorphous phase, can act as a stabilizing agent against crystalline transitions, which makes this approach interesting for a variety of applications.

Ballistic transport in graphene grown by chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calado, V. E.; Goswami, S.; Xu, Q.

2014-01-13

In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

SPE-LEEM Studies on the Surface and Electronic Structure of 2-D Transition Metal Dichalcogenides

NASA Astrophysics Data System (ADS)

Yeh, Po-Chun; Jin, Wencan; Zaki, Nader; Zhang, Datong; Sadowski, Jerzy; Al-Mahboob, Abdullah; van de Zande, Arend; Chenet, Daniel; Dadap, Jerry; Herman, Irving; Sutter, Petter; Hone, James; Osgood, Richard

2014-03-01

In this work, we studied the surface and electronic structure of monolayer and few-layer exfoliated MoS2 and WSe2, as well as chemical-vapor-deposition (CVD) grown MoS2, using Spectroscopic Photoemission and Low Energy Electron Microscope (SPE-LEEM). LEEM measurements reveal that, unlike exfoliated MoS2, CVD-grown MoS2 exhibits grain-boundary alterations due to surface strain. However, LEEM and micro-probe low energy electron diffraction show that the quality of CVD-grown MoS2 is comparable to that of exfoliated MoS2. Micrometer-scale angle-resolved photoemission spectroscopy (ARPES) measurement on exfoliated MoS2 and WSe2 single-crystals provides direct evidence for the shifting of the valence band maximum from Γ to K, when the layer number is thinned down to one, as predicted by density functional theory. Our measurements of the k-space resolved electronic structure allow for further comparison with other theoretical predictions and with transport measurements. Session I and II

Ti-doped hydrogenated diamond like carbon coating deposited by hybrid physical vapor deposition and plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, Na Rae; Sle Jun, Yee; Moon, Kyoung Il; Sunyong Lee, Caroline

2017-03-01

Diamond-like carbon films containing titanium and hydrogen (Ti-doped DLC:H) were synthesized using a hybrid technique based on physical vapor deposition (PVD) and plasma enhanced chemical vapor deposition (PECVD). The film was deposited under a mixture of argon (Ar) and acetylene gas (C2H2). The amount of Ti in the Ti-doped DLC:H film was controlled by varying the DC power of the Ti sputtering target ranging from 0 to 240 W. The composition, microstructure, mechanical and chemical properties of Ti-doped DLC:H films with varying Ti concentrations, were investigated using Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), nano indentation, a ball-on-disk tribometer, a four-point probe system and dynamic anodic testing. As a result, the optimum composition of Ti in Ti-doped DLC:H film using our hybrid method was found to be a Ti content of 18 at. %, having superior electrical conductivity and high corrosion resistance, suitable for bipolar plates. Its hardness value was measured to be 25.6 GPa with a low friction factor.

Chemical Vapor Deposition Growth and Applications of Two-Dimensional Materials and Their Heterostructures.

PubMed

Cai, Zhengyang; Liu, Bilu; Zou, Xiaolong; Cheng, Hui-Ming

2018-01-31

Two-dimensional (2D) materials have attracted increasing research interest because of the abundant choice of materials with diverse and tunable electronic, optical, and chemical properties. Moreover, 2D material based heterostructures combining several individual 2D materials provide unique platforms to create an almost infinite number of materials and show exotic physical phenomena as well as new properties and applications. To achieve these high expectations, methods for the scalable preparation of 2D materials and 2D heterostructures of high quality and low cost must be developed. Chemical vapor deposition (CVD) is a powerful method which may meet the above requirements, and has been extensively used to grow 2D materials and their heterostructures in recent years, despite several challenges remaining. In this review of the challenges in the CVD growth of 2D materials, we highlight recent advances in the controlled growth of single crystal 2D materials, with an emphasis on semiconducting transition metal dichalcogenides. We provide insight into the growth mechanisms of single crystal 2D domains and the key technologies used to realize wafer-scale growth of continuous and homogeneous 2D films which are important for practical applications. Meanwhile, strategies to design and grow various kinds of 2D material based heterostructures are thoroughly discussed. The applications of CVD-grown 2D materials and their heterostructures in electronics, optoelectronics, sensors, flexible devices, and electrocatalysis are also discussed. Finally, we suggest solutions to these challenges and ideas concerning future developments in this emerging field.

Room Temperature Sensing Achieved by GaAs Nanowires and oCVD Polymer Coating.

PubMed

Wang, Xiaoxue; Ermez, Sema; Goktas, Hilal; Gradečak, Silvija; Gleason, Karen

2017-06-01

Novel structures comprised of GaAs nanowire arrays conformally coated with conducting polymers (poly(3,4-ethylenedioxythiophene) (PEDOT) or poly(3,4-ethylenedioxythiophene-co-3-thiophene acetic acid) display both sensitivity and selectivity to a variety of volatile organic chemicals. A key feature is room temperature operation, so that neither a heater nor the power it would consume, is required. It is a distinct difference from traditional metal oxide sensors, which typically require elevated operational temperature. The GaAs nanowires are prepared directly via self-seeded metal-organic chemical deposition, and conducting polymers are deposited on GaAs nanowires using oxidative chemical vapor deposition (oCVD). The range of thickness for the oCVD layer is between 100 and 200 nm, which is controlled by changing the deposition time. X-ray diffraction analysis indicates an edge-on alignment of the crystalline structure of the PEDOT coating layer on GaAs nanowires. In addition, the positive correlation between the improvement of sensitivity and the increasing nanowire density is demonstrated. Furthermore, the effect of different oCVD coating materials is studied. The sensing mechanism is also discussed with studies considering both nanowire density and polymer types. Overall, the novel structure exhibits good sensitivity and selectivity in gas sensing, and provides a promising platform for future sensor design. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

CVD-grown horizontally aligned single-walled carbon nanotubes: synthesis routes and growth mechanisms.

PubMed

Ibrahim, Imad; Bachmatiuk, Alicja; Warner, Jamie H; Büchner, Bernd; Cuniberti, Gianaurelio; Rümmeli, Mark H

2012-07-09

Single-walled carbon nanotubes (SWCNTs) have attractive electrical and physical properties, which make them very promising for use in various applications. For some applications however, in particular those involving electronics, SWCNTs need to be synthesized with a high degree of control with respect to yield, length, alignment, diameter, and chirality. With this in mind, a great deal of effort is being directed to the precision control of vertically and horizontally aligned nanotubes. In this review the focus is on the latter, horizontally aligned tubes grown by chemical vapor deposition (CVD). The reader is provided with an in-depth review of the established vapor deposition orientation techniques. Detailed discussions on the characterization routes, growth parameters, and growth mechanisms are also provided. Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Nanocrystalline sp{sup 2} and sp{sup 3} carbons: CVD synthesis and applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Terranova, M. L.; Rossi, M.; Tamburri, E., E-mail: emanuela.tamburri@uniroma2.it

The design and production of innovative materials based on nanocrystalline sp{sup 2}- and sp{sup 3}-coordinated carbons is presently a focus of the scientific community. We present a review of the nanostructures obtained in our labs using a series of synthetic routes, which make use of chemical vapor deposition (CVD) techniques for the selective production of non-planar graphitic nanostructures, nanocrystalline diamonds, and hybrid two-phase nanostructures.

Gas-to-particle conversion in the particle precipitation-aided chemical vapor deposition process II. Synthesis of the perovskite oxide yttrium chromite

DOE Office of Scientific and Technical Information (OSTI.GOV)

Dieten, V.E.J. van; Dekker, J.P.; Hurkmans, E.J.

1993-11-01

In the particle precipitation-aided chemical vapor deposition process, an aerosol is formed in the gas phase at elevated temperatures. The particles are deposited on a cooled substrate. Coherent layers with a controlled porosity can be obtained by a simultaneous heterogeneous reaction, which interconnects the deposited particles. The synthesis of submicrometer powder of the perovskite oxide yttrium chromite (YCrO[sub 3]) by gas to particle conversion, which is the first step of the PP-CVD process, has been investigated, and preliminary results are shown. The powders have been synthesized using yttrium trichloride vapor (YCl[sub 3]), chromium trichloride vapor (CrCl[sub 3]), and steam andmore » oxygen as reactants. The influence of the input molar ratio of the elements on the composition and characteristics of the powders has been investigated. Phase composition has been determined by X-ray diffraction (XRD). The powders have been characterized by transmission electron microscopy (TEM) and sedimentation field flow fractionation (SF[sup 3]). At a reaction temperature of 1283 K the powders consist of the chromium sesquioxide (Cr[sub 2]O[sub 3]), or a mixture of Cr[sub 2]O[sub 3] and YCrO[sub 3]. At stoichiometeric input amounts of metal chlorides and steam the formation of YCrO[sub 3] seems to be favored. 19 refs., 6 figs., 3 tabs.« less

Growth, structure and stability of sputter-deposited MoS2 thin films.

PubMed

Kaindl, Reinhard; Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS 2 ) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS 2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS 2 films by magnetron sputtering. MoS 2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO 2 /Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS 2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS 2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS 2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS 2 thin films are discussed. A potential application for such conductive nanostructured MoS 2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS 2 films.

Growth, structure and stability of sputter-deposited MoS2 thin films

PubMed Central

Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS2) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films. PMID:28685112

Influence of water vapor on the electronic property of MoS2 field effect transistors.

PubMed

Shu, Jiapei; Wu, Gongtao; Gao, Song; Liu, Bo; Wei, Xianlong; Chen, Qing

2017-05-19

The influence of water vapor on the electronic property of MoS 2 field effect transistors (FETs) is studied through controlled experiments. We fabricate supported and suspended FETs on the same piece of MoS 2 to figure out the role of SiO 2 substrate on the water sensing property of MoS 2 . The two kinds of devices show similar response to water vapor and to different treatments, such as pumping in the vacuum, annealing at 500 K and current annealing, indicating the substrate does not play an important role in the MoS 2 water sensor. Water adsorption is found to decrease the carrier mobility probably through introducing a scattering center on the surface of MoS 2 . The threshold voltage and subthreshold swing of the FETs do not change obviously after introducing water vapor, indicating there is no obvious doping and trap introducing effects. Long time pumping in a high vacuum and 500 K annealing show negligible effects on removing the water adsorption on the devices. Current annealing at high source-drain bias is found to be able to remove the water adsorption and set the FETs to their initial states. The mechanism is proposed to be through the hot carriers at high bias.

Moire-Fringe Images of Twin Boundaries in Chemical Vapor Deposited Diamond

DTIC Science & Technology

1992-07-10

Moire-Fringe Images of Twin Boundaries in Chemical Vapor Deposited Diamond IJ PERSONAL AUITHOR(S) - D. Shechtman. A. Fldman, M.D. Vaudin, and J.L...micrographs of chemical vapor deposited diamond can be interprete as Moire fringes that occur when viewing twin boundaries that are inclined to the electron...Dist J Special TECHNICAL REPORT No. 14 eca MOIRE-FRINGE IMAGES OF TWIN BOUNDARIES IN CHEMICAL VAPOR DEPOSITED DIAMOND D. Shechtman, A. Feldman, M.D

Near room temperature chemical vapor deposition of graphene with diluted methane and molten gallium catalyst.

PubMed

Fujita, Jun-Ichi; Hiyama, Takaki; Hirukawa, Ayaka; Kondo, Takahiro; Nakamura, Junji; Ito, Shin-Ichi; Araki, Ryosuke; Ito, Yoshikazu; Takeguchi, Masaki; Pai, Woei Wu

2017-09-28

Direct growth of graphene integrated into electronic devices is highly desirable but difficult due to the nominal ~1000 °C chemical vapor deposition (CVD) temperature, which can seriously deteriorate the substrates. Here we report a great reduction of graphene CVD temperature, down to 50 °C on sapphire and 100 °C on polycarbonate, by using dilute methane as the source and molten gallium (Ga) as catalysts. The very low temperature graphene synthesis is made possible by carbon attachment to the island edges of pre-existing graphene nuclei islands, and causes no damages to the substrates. A key benefit of using molten Ga catalyst is the enhanced methane absorption in Ga at lower temperatures; this leads to a surprisingly low apparent reaction barrier of ~0.16 eV below 300 °C. The faster growth kinetics due to a low reaction barrier and a demonstrated low-temperature graphene nuclei transfer protocol can facilitate practical direct graphene synthesis on many kinds of substrates down to 50-100 °C. Our results represent a significant progress in reducing graphene synthesis temperature and understanding its mechanism.

NEXAFS Study of the Annealing Effect on the Local Structure of FIB-CVD DLC

DOE Office of Scientific and Technical Information (OSTI.GOV)

Saikubo, Akihiko; Kato, Yuri; Igaki, Jun-ya

2007-01-19

Annealing effect on the local structure of diamond like carbon (DLC) formed by focused ion beam-chemical vapor deposition (FIB-CVD) was investigated by the measurement of near edge x-ray absorption fine structure (NEXAFS) and energy dispersive x-ray (EDX) spectra. Carbon K edge absorption NEXAFS spectrum of FIB-CVD DLC was measured in the energy range of 275-320 eV. In order to obtain the information on the location of the gallium in the depth direction, incidence angle dependence of NEXAFS spectrum was measured in the incident angle range from 0 deg. to 60 deg. . The peak intensity corresponding to the resonance transitionmore » of 1s{yields}{sigma}* originating from carbon-gallium increased from the FIB-CVD DLC annealed at 200 deg. C to the FIB-CVD DLC annealed at 400 deg. C and decreased from that at 400 deg. C to that at 600 deg. C. Especially, the intensity of this peak remarkably enhanced in the NEXAFS spectrum of the FIB-CVD DLC annealed at 400 deg. C at the incident angle of 60 deg. . On the contrary, the peak intensity corresponding to the resonance transition of 1s{yields}{pi}* originating from carbon double bonding of emission spectrum decreased from the FIB-CVD DLC annealed at 200 deg. C to that at 400 deg. C and increased from that at 400 deg. C to that at 600 deg. C. Gallium concentration in the FIB-CVD DLC decreased from {approx_equal}2.2% of the as-deposited FIB-CVD DLC to {approx_equal}1.5% of the FIB-CVD DLC annealed at 600 deg. C from the elementary analysis using EDX. Both experimental results indicated that gallium atom departed from FIB-CVD DLC by annealing at the temperature of 600 deg. C.« less

Controlled surface diffusion in plasma-enhanced chemical vapor deposition of GaN nanowires.

PubMed

Hou, Wen Chi; Hong, Franklin Chau-Nan

2009-02-04

This study investigates the growth of GaN nanowires by controlling the surface diffusion of Ga species on sapphire in a plasma-enhanced chemical vapor deposition (CVD) system. Under nitrogen-rich growth conditions, Ga has a tendency to adsorb on the substrate surface diffusing to nanowires to contribute to their growth. The significance of surface diffusion on the growth of nanowires is dependent on the environment of the nanowire on the substrate surface as well as the gas phase species and compositions. Under nitrogen-rich growth conditions, the growth rate is strongly dependent on the surface diffusion of gallium, but the addition of 5% hydrogen in nitrogen plasma instantly diminishes the surface diffusion effect. Gallium desorbs easily from the surface by reaction with hydrogen. On the other hand, under gallium-rich growth conditions, nanowire growth is shown to be dominated by the gas phase deposition, with negligible contribution from surface diffusion. This is the first study reporting the inhibition of surface diffusion effects by hydrogen addition, which can be useful in tailoring the growth and characteristics of nanowires. Without any evidence of direct deposition on the nanowire surface, gallium and nitrogen are shown to dissolve into the catalyst for growing the nanowires at 900 degrees C.

Comparison of a model vapor deposited glass films to equilibrium glass films

NASA Astrophysics Data System (ADS)

Flenner, Elijah; Berthier, Ludovic; Charbonneau, Patrick; Zamponi, Francesco

Vapor deposition of particles onto a substrate held at around 85% of the glass transition temperature can create glasses with increased density, enthalpy, kinetic stability, and mechanical stability compared to an ordinary glass created by cooling. It is estimated that an ordinary glass would need to age thousands of years to reach the kinetic stability of a vapor deposited glass, and a natural question is how close to the equilibrium is the vapor deposited glass. To understand the process, algorithms akin to vapor deposition are used to create simulated glasses that have a higher kinetic stability than their annealed counterpart, although these glasses may not be well equilibrated either. Here we use novel models optimized for a swap Monte Carlo algorithm in order to create equilibrium glass films and compare their properties with those of glasses obtained from vapor deposition algorithms. This approach allows us to directly assess the non-equilibrium nature of vapor-deposited ultrastable glasses. Simons Collaboration on Cracking the Glass Problem and NSF Grant No. DMR 1608086.

Development of hot-pressed and chemical-vapor-deposited zinc sulfide and zinc selenide in the United States for optical windows

NASA Astrophysics Data System (ADS)

Harris, Daniel C.

2007-04-01

By the mid 1950s, there was a need for infrared-transmitting materials with improved optical and mechanical characteristics for military and commercial instruments. The newly invented "heat-seeking" missile also required a more durable infrared-transmitting dome. Some properties of ZnS were known from studies of natural minerals. More properties of pure ZnS and ZnSe were measured with single crystals grown in Air Force and industrial laboratories in the 1950s. In 1956, a team led by William Parsons at the Eastman Kodak Hawk-Eye Works in Rochester, New York began to apply the technique of hot pressing to make infrared-transmitting ceramics from powders. This work led to commercial production of six materials, including ZnS (IRTRAN® 2) and ZnSe (IRTRAN® 4) in the 1960s. Because the hot pressed materials could not be made in very large sizes and suffered from undesirable optical losses, the Air Force began to look for alternative manufacturing methods around 1970. Almost immediately, highly successful materials were produced by chemical vapor deposition under Air Force sponsorship by a team led by James Pappis at the Raytheon Research Division in Waltham, Massachusetts. Chemical-vapor-deposited materials replaced hot pressed materials in most applications within a few years. From a stream of Air Force contracts in the 1970s and early 1980s, Raytheon produced two different grades of ZnS for windows and domes, one grade of ZnSe for high-energy CO II laser windows, and a composite ZnS/ZnSe window for aircraft sensor pods. In 1980, a competitor called CVD, Inc., was formed by Robert Donadio, who came from the Raytheon Research Division. CVD began with a license from Raytheon, but soon sued Raytheon, arguing that the license violated the Sherman Antitrust Act. Raytheon countersued for breach of employment contracts and misappropriation of trade secrets. In 1984, a jury ruled in favor of CVD, which went on to build a lucrative business in ZnSe and ZnS. CVD was eventually

Selected Topics in CVD Diamond Research

NASA Astrophysics Data System (ADS)

Koizumi, Satoshi; Nebel, Christoph E.; Nesladek, Milos

2006-10-01

Since the discovery of Chemical Vapor Deposition (CVD) diamond growth in 1976, the steady scientific progress often resulted in surprising new discoveries and breakthroughs. This brought us to the idea to publish the special issue Selected Topics in CVD Diamond Research in physica status solidi (a), reflecting such advancements and interesting results at the leading edge of diamond research.The present issue summarizes this progress in the CVD diamond field by selecting contributions from several areas such as superconductivity, super-excitonic radiation, quantum computing, bio-functionalization, surface electronic properties, the nature of phosphorus doping, transport properties in high energy detectors, CVD growth and properties of nanocrystalline diamond. In all these directions CVD diamond appears to be very competitive in comparison with other semiconducting materials.As Editors of this special issue, we must admit that the selection is biased by our opinion. Nonetheless, we are sure that each contribution introduces new ideas and results which will improve the understanding of the current level of physics and chemistry of this attractive wide-bandgap semiconductor and which will help to bring it closer to applications.All submissions were invited based on the contributions of the authors to their specific research field. The Feature Articles have the format of topical reviews to give the reader a comprehensive summary. Partially, however, they are written in research paper style to report new results of ongoing research.We hope that this issue will attract the attention of a broad community of scientists and engineers, and that it will facilitate the utilization of diamond in electronic applications and technologies of the future.

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials

DTIC Science & Technology

2016-04-27

Hybrid Physical Vapor Deposition Instrument for Advanced Functional Multilayers and Materials PI Maria received support to construct a physical...vapor deposition (PVD) system that combines electron beam (e- beam) evaporation, magnetron sputtering, pulsed laser ablation, and ion-assisted deposition ...The instrumentation enables clean, uniform, and rapid deposition of a wide variety of metallic, semiconducting, and ceramic thin films with

Vacuum vapor deposition: A spinoff of space welding development

NASA Technical Reports Server (NTRS)

Poorman, R. M.

1991-01-01

A vapor deposition process has been defined through a spinoff effort of space welding development. In this development for welding in a space environment, a hollow electrode was used to add gas precisely at the welding arc. This provides gas for ionization which carries the welding arc current. During this welding development metal vapor coatings were observed. These coatings are unique in that they are produced by a new process. Some coatings produced and the potential of this new and innovative vapor deposition process are characterized. Advantages over prior art are discussed.

Low-Temperature Atomic Layer Deposition of MoS2 Films.

PubMed

Jurca, Titel; Moody, Michael J; Henning, Alex; Emery, Jonathan D; Wang, Binghao; Tan, Jeffrey M; Lohr, Tracy L; Lauhon, Lincoln J; Marks, Tobin J

2017-04-24

Wet chemical screening reveals the very high reactivity of Mo(NMe 2 ) 4 with H 2 S for the low-temperature synthesis of MoS 2 . This observation motivated an investigation of Mo(NMe 2 ) 4 as a volatile precursor for the atomic layer deposition (ALD) of MoS 2 thin films. Herein we report that Mo(NMe 2 ) 4 enables MoS 2 film growth at record low temperatures-as low as 60 °C. The as-deposited films are amorphous but can be readily crystallized by annealing. Importantly, the low ALD growth temperature is compatible with photolithographic and lift-off patterning for the straightforward fabrication of diverse device structures. © 2017 Wiley-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fast method for reactor and feature scale coupling in ALD and CVD

DOEpatents

Yanguas-Gil, Angel; Elam, Jeffrey W.

2017-08-08

Transport and surface chemistry of certain deposition techniques is modeled. Methods provide a model of the transport inside nanostructures as a single-particle discrete Markov chain process. This approach decouples the complexity of the surface chemistry from the transport model, thus allowing its application under general surface chemistry conditions, including atomic layer deposition (ALD) and chemical vapor deposition (CVD). Methods provide for determination of determine statistical information of the trajectory of individual molecules, such as the average interaction time or the number of wall collisions for molecules entering the nanostructures as well as to track the relative contributions to thin-film growth of different independent reaction pathways at each point of the feature.

Deposition of naphthalene and tetradecane vapors in models of the human respiratory system.

PubMed

Zhang, Zhe; Kleinstreuer, Clement

2011-01-01

Jet-propulsion fuel (particularly JP-8) is currently being used worldwide, exposing especially Air Force personnel and people living near airfields to JP-8 vapors and aerosols during aircraft fueling, maintenance operations, and/or cold starts. JP-8 is a complex mixture containing >200, mostly toxic, aliphatic and aromatic hydrocarbon compounds of which tetradecane and naphthalene were chosen as two representative chemical markers for computer simulations. Thus, transport and deposition of naphthalene and tetradecane vapors have been simulated in models of the human respiratory system. The inspiratory deposition data were analyzed in terms of regional deposition fractions (DFs) and deposition enhancement factors (DEF). The vapor depositions are affected by vapor properties (e.g. diffusivity), airway geometric features, breathing patterns, inspiratory flow rates, as well as airway-wall absorption parameter. Specifically, the respiratory uptake of vapors is greatly influenced by the degree of airway-wall absorption. For example, being an almost insoluble species in the mucus layer, the deposition of tetradecane vapor is nearly zero in the extrathoracic and tracheobronchial (TB) airways, that is, the DF is <1%. The remaining vapors may penetrate further and deposit in the alveolar airways. The DF of tetradecane vapors during inhalation in the alveolar region can range from 7% to 24%, depending on breathing waveform, inhalation rate, and thickness of the mucus layer. In contrast, naphthalene vapor almost completely deposits in the extrathoracic and TB airways and hardly moves downstream and deposits in the respiratory zone. The DFs of naphthalene vapor in the extrathoracic airways from nasal/oral to trachea under normal breathing conditions (Q = 15-60 L/min) are about 12-34%, although they are about 66-87% in the TB airways. In addition, the variation of breathing routes (say, from nasal breathing to oral breathing) may influence the vapor deposition in the

Large-scale Growth and Simultaneous Doping of Molybdenum Disulfide Nanosheets

PubMed Central

Kim, Seong Jun; Kang, Min-A; Kim, Sung Ho; Lee, Youngbum; Song, Wooseok; Myung, Sung; Lee, Sun Sook; Lim, Jongsun; An, Ki-Seok

2016-01-01

A facile method that uses chemical vapor deposition (CVD) for the simultaneous growth and doping of large-scale molybdenum disulfide (MoS2) nanosheets was developed. We employed metalloporphyrin as a seeding promoter layer for the uniform growth of MoS2 nanosheets. Here, a hybrid deposition system that combines thermal evaporation and atomic layer deposition (ALD) was utilized to prepare the promoter. The doping effect of the promoter was verified by X-ray photoelectron spectroscopy and Raman spectroscopy. In addition, the carrier density of the MoS2 nanosheets was manipulated by adjusting the thickness of the metalloporphyrin promoter layers, which allowed the electrical conductivity in MoS2 to be manipulated. PMID:27044862

Surface structuring of boron doped CVD diamond by micro electrical discharge machining

NASA Astrophysics Data System (ADS)

Schubert, A.; Berger, T.; Martin, A.; Hackert-Oschätzchen, M.; Treffkorn, N.; Kühn, R.

2018-05-01

Boron doped diamond materials, which are generated by Chemical Vapor Deposition (CVD), offer a great potential for the application on highly stressed tools, e. g. in cutting or forming processes. As a result of the CVD process rough surfaces arise, which require a finishing treatment in particular for the application in forming tools. Cutting techniques such as milling and grinding are hardly applicable for the finish machining because of the high strength of diamond. Due to its process principle of ablating material by melting and evaporating, Electrical Discharge Machining (EDM) is independent of hardness, brittleness or toughness of the workpiece material. EDM is a suitable technology for machining and structuring CVD diamond, since boron doped CVD diamond is electrically conductive. In this study the ablation characteristics of boron doped CVD diamond by micro electrical discharge machining are investigated. Experiments were carried out to investigate the influence of different process parameters on the machining result. The impact of tool-polarity, voltage and discharge energy on the resulting erosion geometry and the tool wear was analyzed. A variation in path overlapping during the erosion of planar areas leads to different microstructures. The results show that micro EDM is a suitable technology for finishing of boron doped CVD diamond.

High Yield Chemical Vapor Deposition Growth of High Quality Large-Area AB Stacked Bilayer Graphene

PubMed Central

Liu, Lixin; Zhou, Hailong; Cheng, Rui; Yu, Woo Jong; Liu, Yuan; Chen, Yu; Shaw, Jonathan; Zhong, Xing; Huang, Yu; Duan, Xiangfeng

2012-01-01

Bernal stacked (AB stacked) bilayer graphene is of significant interest for functional electronic and photonic devices due to the feasibility to continuously tune its band gap with a vertical electrical field. Mechanical exfoliation can be used to produce AB stacked bilayer graphene flakes but typically with the sizes limited to a few micrometers. Chemical vapor deposition (CVD) has been recently explored for the synthesis of bilayer graphene but usually with limited coverage and a mixture of AB and randomly stacked structures. Herein we report a rational approach to produce large-area high quality AB stacked bilayer graphene. We show that the self-limiting effect of graphene growth on Cu foil can be broken by using a high H2/CH4 ratio in a low pressure CVD process to enable the continued growth of bilayer graphene. A high temperature and low pressure nucleation step is found to be critical for the formation of bilayer graphene nuclei with high AB stacking ratio. A rational design of a two-step CVD process is developed for the growth of bilayer graphene with high AB stacking ratio (up to 90 %) and high coverage (up to 99 %). The electrical transport studies demonstrated that devices made of the as-grown bilayer graphene exhibit typical characteristics of AB stacked bilayer graphene with the highest carrier mobility exceeding 4,000 cm2/V·s at room temperature, comparable to that of the exfoliated bilayer graphene. PMID:22906199

Delaminated Transfer of CVD Graphene

NASA Astrophysics Data System (ADS)

Clavijo, Alexis; Mao, Jinhai; Tilak, Nikhil; Altvater, Michael; Andrei, Eva

Single layer graphene is commonly synthesized by dissociation of a carbonaceous gas at high temperatures in the presence of a metallic catalyst in a process known as Chemical Vapor Deposition or CVD. Although it is possible to achieve high quality graphene by CVD, the standard transfer technique of etching away the metallic catalyst is wasteful and jeopardizes the quality of the graphene film by contamination from etchants. Thus, development of a clean transfer technique and preservation of the parent substrate remain prominent hurdles to overcome. In this study, we employ a copper pretreatment technique and optimized parameters for growth of high quality single layer graphene at atmospheric pressure. We address the transfer challenge by utilizing the adhesive properties between a polymer film and graphene to achieve etchant-free transfer of graphene films from a copper substrate. Based on this concept we developed a technique for dry delamination and transferring of graphene to hexagonal boron nitride substrates, which produced high quality graphene films while at the same time preserving the integrity of the copper catalyst for reuse. DOE-FG02-99ER45742, Ronald E. McNair Postbaccalaureate Achievement Program.

Environmental effects on the tensile strength of chemically vapor deposited silicon carbide fibers

NASA Technical Reports Server (NTRS)

Bhatt, R. T.; Kraitchman, M. D.

1985-01-01

The room temperature and elevated temperature tensile strengths of commercially available chemically vapor-deposited (CVD) silicon carbide fibers were measured after 15 min heat treatment to 1600 C in various environments. These environments included oxygen, air, argon and nitrogen at one atmosphere and vacuum at 10/9 atmosphere. Two types of fibers were examined which differed in the SiC content of their carbon-rich coatings. Threshold temperature for fiber strength degradation was observed to be dependent on the as-received fiber-flaw structure, on the environment and on the coating. Fractographic analyses and flexural strength measurements indicate that tensile strength losses were caused by surface degradation. Oxidation of the surface coating is suggested as one possible degradation mechanism. The SiC fibers containing the higher percentage of SiC near the surface of the carbon-rich coating show better strength retention and higher elevated temperature strength.

Synthesis of molybdenum carbide superconducting compounds by microwave-plasma chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zhao, Hongyang; Cai, Kang; Ma, Zhibin; Cheng, Zhenxiang; Jia, Tingting; Kimura, Hideo; Fu, Qiuming; Tao, Hong; Xiong, Liwei

2018-02-01

A method to synthesize molybdenum carbides has been developed based on microwave plasma treatment with methane and hydrogen mixed gases, using a microwave-plasma chemical vapor deposition device. The device framework and its mechanism are described in detail. Two-dimensional α-Mo2C has been directly synthesized by a plate-to-plate substrate holder structure with a microwave power of 920 W and a partial pressure of 20 kPa. In-situ optical emission spectroscopy was used to measure the radical types in the plasma ball during glow discharge. The as-grown α-Mo2C samples were characterized by X-ray diffraction, transmission electron microscopy, X-ray photoelectron spectroscopy and Raman spectroscopy to determine their phases, purity and chemical groups. The superconducting transition temperature was measured, and the transition temperatures of the relevant phases are discussed in detail. The results confirmed that this method is an efficient way to obtain molybdenum carbides and inspire new research interest in transition metal carbides, which have many intrinsic local properties and applications.

Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary.

PubMed

Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong

2018-06-01

Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS 2 of 2D materials also contains 2DEG in an atomic layer as a field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS 2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in the FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not been previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS 2 .

Observation of Wigner crystal phase and ripplon-limited mobility behavior in monolayer CVD MoS2 with grain boundary

NASA Astrophysics Data System (ADS)

Chen, Jyun-Hong; Zhong, Yuan-Liang; Li, Lain-Jong; Chen, Chii-Dong

2018-06-01

Two-dimensional electron gas (2DEG) is crucial in condensed matter physics and is present on the surface of liquid helium and at the interface of semiconductors. Monolayer MoS2 of 2D materials also contains 2DEG in an atomic layer as a field effect transistor (FET) ultrathin channel. In this study, we synthesized double triangular MoS2 through a chemical vapor deposition method to obtain grain boundaries for forming a ripple structure in the FET channel. When the temperature was higher than approximately 175 K, the temperature dependence of the electron mobility μ was consistent with those in previous experiments and theoretical predictions. When the temperature was lower than approximately 175 K, the mobility behavior decreased with the temperature; this finding was also consistent with that of the previous experiments. We are the first research group to explain the decreasing mobility behavior by using the Wigner crystal phase and to discover the temperature independence of ripplon-limited mobility behavior at lower temperatures. Although these mobility behaviors have been studied on the surface of liquid helium through theories and experiments, they have not been previously analyzed in 2D materials and semiconductors. We are the first research group to report the similar temperature-dependent mobility behavior of the surface of liquid helium and the monolayer MoS2.

Ballistic Transport Exceeding 28 μm in CVD Grown Graphene.

PubMed

Banszerus, Luca; Schmitz, Michael; Engels, Stephan; Goldsche, Matthias; Watanabe, Kenji; Taniguchi, Takashi; Beschoten, Bernd; Stampfer, Christoph

2016-02-10

We report on ballistic transport over more than 28 μm in graphene grown by chemical vapor deposition (CVD) that is fully encapsulated in hexagonal boron nitride. The structures are fabricated by an advanced dry van-der-Waals transfer method and exhibit carrier mobilities of up to three million cm(2)/(Vs). The ballistic nature of charge transport is probed by measuring the bend resistance in cross- and square-shaped devices. Temperature-dependent measurements furthermore prove that ballistic transport is maintained exceeding 1 μm up to 200 K.

Substrate temperature controls molecular orientation in two-component vapor-deposited glasses

DOE PAGES

Jiang, J.; Walters, D. M.; Zhou, D.; ...

2016-02-22

Vapor-deposited glasses can be anisotropic and molecular orientation is important for organic electronics applications. In organic light emitting diodes (OLEDs), for example, the orientation of dye molecules in two-component emitting layers significantly influences emission efficiency. Here we investigate how substrate temperature during vapor deposition influences the orientation of dye molecules in a model two-component system. We determine the average orientation of a linear blue light emitter 1,4-di-[4-( N,N-diphenyl)amino]styrylbenzene (DSA-Ph) in mixtures with aluminum-tris(8-hydroxyquinoline) (Alq 3) by spectroscopic ellipsometry and IR dichroism. We find that molecular orientation is controlled by the ratio of the substrate temperature during deposition and the glassmore » transition temperature of the mixture. Furthermore, these findings extend recent results for single component vapor-deposited glasses and suggest that, during vapor deposition, surface mobility allows partial equilibration towards orientations preferred at the free surface of the equilibrium liquid.« less

Chemical vapor deposition reactor. [providing uniform film thickness

NASA Technical Reports Server (NTRS)

Chern, S. S.; Maserjian, J. (Inventor)

1977-01-01

An improved chemical vapor deposition reactor is characterized by a vapor deposition chamber configured to substantially eliminate non-uniformities in films deposited on substrates by control of gas flow and removing gas phase reaction materials from the chamber. Uniformity in the thickness of films is produced by having reactive gases injected through multiple jets which are placed at uniformally distributed locations. Gas phase reaction materials are removed through an exhaust chimney which is positioned above the centrally located, heated pad or platform on which substrates are placed. A baffle is situated above the heated platform below the mouth of the chimney to prevent downdraft dispersion and scattering of gas phase reactant materials.

A beam radiation monitor based on CVD diamonds for SuperB

NASA Astrophysics Data System (ADS)

Cardarelli, R.; Di Ciaccio, A.

2013-08-01

Chemical Vapor Deposition (CVD) diamond particle detectors are in use in the CERN experiments at LHC and at particle accelerator laboratories in Europe, USA and Japan mainly as beam monitors. Nowadays it is considered a proven technology with a very fast signal read-out and a very high radiation tolerance suitable for measurements in high radiation environment zones i.e. near the accelerators beam pipes. The specific properties of CVD diamonds make them a prime candidate for measuring single particles as well as high-intensity particle cascades, for timing measurements on the sub-nanosecond scale and for beam protection systems in hostile environments. A single-crystalline CVD (scCVD) diamond sensor, read out with a new generation of fast and high transition frequency SiGe bipolar transistor amplifiers, has been tested for an application as radiation monitor to safeguard the silicon vertex tracker in the SuperB detector from excessive radiation damage, cumulative dose and instantaneous dose rates. Test results with 5.5 MeV alpha particles from a 241Am radioactive source and from electrons from a 90Sr radioactive source are presented in this paper.

Formation of Graphene Grain Boundaries on Cu(100) Surface and a Route Towards Their Elimination in Chemical Vapor Deposition Growth

NASA Astrophysics Data System (ADS)

Yuan, Qinghong; Song, Guangyao; Sun, Deyan; Ding, Feng

2014-10-01

Grain boundaries (GBs) in graphene prepared by chemical vapor deposition (CVD) greatly degrade the electrical and mechanical properties of graphene and thus hinder the applications of graphene in electronic devices. The seamless stitching of graphene flakes can avoid GBs, wherein the identical orientation of graphene domain is required. In this letter, the graphene orientation on one of the most used catalyst surface -- Cu(100) surface, is explored by density functional theory (DFT) calculations. Our calculation demonstrates that a zigzag edged hexagonal graphene domain on a Cu(100) surface has two equivalent energetically preferred orientations, which are 30 degree away from each other. Therefore, the fusion of graphene domains on Cu(100) surface during CVD growth will inevitably lead to densely distributed GBs in the synthesized graphene. Aiming to solve this problem, a simple route, that applies external strain to break the symmetry of the Cu(100) surface, was proposed and proved efficient.

Low-temperature graphene synthesis using microwave plasma CVD

NASA Astrophysics Data System (ADS)

Yamada, Takatoshi; Kim, Jaeho; Ishihara, Masatou; Hasegawa, Masataka

2013-02-01

The graphene chemical vapour deposition (CVD) technique at substrate temperatures around 300 °C by a microwave plasma sustained by surface waves (surface wave plasma chemical vapour deposition, SWP-CVD) is discussed. A low-temperature, large-area and high-deposition-rate CVD process for graphene films was developed. It was found from Raman spectra that the deposited films on copper (Cu) substrates consisted of high-quality graphene flakes. The fabricated graphene transparent conductive electrode showed uniform optical transmittance and sheet resistance, which suggests the possibility of graphene for practical electrical and optoelectronic applications. It is intriguing that graphene was successfully deposited on aluminium (Al) substrates, for which we did not expect the catalytic effect to decompose hydrocarbon and hydrogen molecules. We developed a roll-to-roll SWP-CVD system for continuous graphene film deposition towards industrial mass production. A pair of winder and unwinder systems of Cu film was installed in the plasma CVD apparatus. Uniform Raman spectra were confirmed over the whole width of 297 mm of Cu films. We successfully transferred the deposited graphene onto PET films, and confirmed a transmittance of about 95% and a sheet resistance of less than 7 × 105 Ω/sq.

Development Status of a CVD System to Deposit Tungsten onto UO2 Powder via the WCI6 Process

NASA Technical Reports Server (NTRS)

Mireles, O. R.; Kimberlin, A.; Broadway, J.; Hickman, R.

2014-01-01

Nuclear Thermal Propulsion (NTP) is under development for deep space exploration. NTP's high specific impulse (> 850 second) enables a large range of destinations, shorter trip durations, and improved reliability. W-60vol%UO2 CERMET fuel development efforts emphasize fabrication, performance testing and process optimization to meet service life requirements. Fuel elements must be able to survive operation in excess of 2850 K, exposure to flowing hydrogen (H2), vibration, acoustic, and radiation conditions. CTE mismatch between W and UO2 result in high thermal stresses and lead to mechanical failure as a result UO2 reduction by hot hydrogen (H2) [1]. Improved powder metallurgy fabrication process control and mitigated fuel loss can be attained by coating UO2 starting powders within a layer of high density tungsten [2]. This paper discusses the advances of a fluidized bed chemical vapor deposition (CVD) system that utilizes the H2-WCl6 reduction process.

Methylsilane derived silicon carbide particle coatings produced by fluid-bed chemical vapor deposition

NASA Astrophysics Data System (ADS)

Miller, James Henry

This report describes the research effort that was undertaken to develop and understand processing techniques for the deposition of both low and high density SiC coatings from a non-halide precursor, in support of the Generation IV Gas-Cooled Fast Reactor (GFR) fuel development program. The research was conducted in two phases. In the first phase, the feasibility of producing both porous SiC coatings and dense SiC coatings on surrogate fuel particles by fluidized bed chemical vapor deposition (FBCVD) using gas mixtures of methylsilane and argon was demonstrated. In the second phase, a combined experimental and modeling effort was carried out in order to gain an understanding of the deposition mechanisms that result in either porous or dense SiC coatings, depending on the coating conditions. For this second phase effort, a simplified (compared to the fluid bed) single-substrate chemical vapor deposition (CVD) system was employed. Based on the experimental and modeling results, the deposition of SiC from methylsilane is controlled by the extent of gas-phase reaction, and is therefore highly sensitive to temperature. The results show that all SiC coatings are due to the surface adsorption of species that result from gas-phase reactions. The model terms these gas-borne species embryos, and while the model does not include a prediction of coating morphology, a comparison of the model and experimental results indicates that the morphology of the coatings is controlled by the nucleation and growth of the embryos. The coating that results from small embryos (embryos with only two Si-C pairs) appears relatively dense and continuous, while the coating that results from larger embryos becomes less continuous and more nodular as embryo size increases. At some point in the growth of embryos they cease to behave as molecular species and instead behave as particles that grow by either agglomeration or by incorporation of molecular species on their surface. As these particles

Growth behavior of carbon nanotubes on multilayered metal catalyst film in chemical vapor deposition

NASA Astrophysics Data System (ADS)

Cui, H.; Eres, G.; Howe, J. Y.; Puretkzy, A.; Varela, M.; Geohegan, D. B.; Lowndes, D. H.

2003-06-01

The temperature and time dependences of carbon nanotube (CNT) growth by chemical vapor deposition are studied using a multilayered Al/Fe/Mo catalyst on silicon substrates. Within the 600-1100 °C temperature range of these studies, narrower temperature ranges were determined for the growth of distinct types of aligned multi-walled CNTs and single-walled CNTs by using high-resolution transmission electron microscopy and Raman spectroscopy. At 900 °C, in contrast to earlier work, double-walled CNTs are found more abundant than single-walled CNTs. Defects also are found to accumulate faster than the ordered graphitic structure if the growth of CNTs is extended to long durations.

Superhydrophobic Copper Surfaces with Anticorrosion Properties Fabricated by Solventless CVD Methods.

PubMed

Vilaró, Ignasi; Yagüe, Jose L; Borrós, Salvador

2017-01-11

Due to continuous miniaturization and increasing number of electrical components in electronics, copper interconnections have become critical for the design of 3D integrated circuits. However, corrosion attack on the copper metal can affect the electronic performance of the material. Superhydrophobic coatings are a commonly used strategy to prevent this undesired effect. In this work, a solventless two-steps process was developed to fabricate superhydrophobic copper surfaces using chemical vapor deposition (CVD) methods. The superhydrophobic state was achieved through the design of a hierarchical structure, combining micro-/nanoscale domains. In the first step, O 2 - and Ar-plasma etchings were performed on the copper substrate to generate microroughness. Afterward, a conformal copolymer, 1H,1H,2H,2H-perfluorodecyl acrylate-ethylene glycol diacrylate [p(PFDA-co-EGDA)], was deposited on top of the metal via initiated CVD (iCVD) to lower the surface energy of the surface. The copolymer topography exhibited a very characteristic and unique nanoworm-like structure. The combination of the nanofeatures of the polymer with the microroughness of the copper led to achievement of the superhydrophobic state. AFM, SEM, and XPS were used to characterize the evolution in topography and chemical composition during the CVD processes. The modified copper showed water contact angles as high as 163° and hysteresis as low as 1°. The coating withstood exposure to aggressive media for extended periods of time. Tafel analysis was used to compare the corrosion rates between bare and modified copper. Results indicated that iCVD-coated copper corrodes 3 orders of magnitude slower than untreated copper. The surface modification process yielded repeatable and robust superhydrophobic coatings with remarkable anticorrosion properties.

Electron emission from chemical vapor deposited diamond and amorphous carbon films observed with a simple field emission device

DOE Office of Scientific and Technical Information (OSTI.GOV)

Feng, Z.; Brown, I.G.; Ager, J.W. III

Electron emission from chemical vapor deposited (CVD) diamond and amorphous carbon (a-C) films was observed with a simple field emission device (FED). Both diamond and a-C films were prepared with microwave plasma-enhanced CVD techniques. Electron emission in the field strength range +10 to {minus}10 MVm{sup {minus}1} was studied, and the field emission source was confirmed by a diode characteristic of the {ital I}-{ital V} curve, a straight line in the Fowler--Nordheim (F-N) plot, and direct observation of light emission from a fluorescent screen. The turn-on field strength was {similar_to}5 MVm{sup {minus}1}, which was similar for both kinds of carbon films.more » The highest current density for diamond films, observed at a field strength of 10 MVm{sup {minus}1}, was {similar_to}15 {mu}A cm{sup {minus}2}. Diamond films yielded a higher emission current than a-C films. The reasons for the observed field emission are discussed.« less

Ethylene Gas Sensing Properties of Tin Oxide Nanowires Synthesized via CVD Method

NASA Astrophysics Data System (ADS)

Akhir, Maisara A. M.; Mohamed, Khairudin; Rezan, Sheikh A.; Arafat, M. M.; Haseeb, A. S. M. A.; Uda, M. N. A.; Nuradibah, M. A.

2018-03-01

This paper studies ethylene gas sensing performance of tin oxide (SnO2) nanowires (NWs) as sensing material synthesized using chemical vapor deposition (CVD) technique. The effect of NWs diameter on ethylene gas sensing characteristics were investigated. SnO2 NWs with diameter of ∼40 and ∼240 nm were deposited onto the alumina substrate with printed gold electrodes and tested for sensing characteristic toward ethylene gas. From the finding, the smallest diameter of NWs (42 nm) exhibit fast response and recovery time and higher sensitivity compared to largest diameter of NWs (∼240 nm). Both sensor show good reversibility features for ethylene gas sensor.

Preparation and characterization of boron nitride coatings on carbon fibers from borazine by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Jun-Sheng; Zhang, Chang-Rui; Li, Bin

2011-06-01

Boron nitride (BN) coatings were deposited on carbon fibers by chemical vapor deposition (CVD) using borazine as single source precursor. The deposited coatings were characterized by scanning electron microscopy (SEM), Auger electron spectroscopy (AES), X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FTIR) and Raman spectroscopy. The effect of temperatures on growth kinetics, morphology, composition and structure of the coatings was investigated. In the low temperature range of 900 °C-1000 °C, the growth rate increased with increasing temperature complying with Arrhenius law, and an apparent active energy of 72 kJ/mol was calculated. The coating surface was smooth and compact, and the coatings uniformly deposited on individual fibers of carbon fiber bundles. The growth was controlled by surface reaction. At 1000 °C, the deposition rate reached a maximum (2.5 μm/h). At the same time, the limiting step of the growth translated to be mass-transportation. Above 1100 °C, the growth rate decreased drastically due to the occurrence of gas-phase nucleation. Moreover, the coating surface became loose and rough. Composition and structure examinations revealed that stoichiometric BN coatings with turbostratic structure were obtained below 1000 °C, while hexagonal BN coatings were deposited above 1100 °C. A penetration of carbon element from the fibers to the coatings was observed.

Nanoscale plasmonic phenomena in CVD-grown MoS 2 monolayer revealed by ultra-broadband synchrotron radiation based nano-FTIR spectroscopy and near-field microscopy

DOE PAGES

Patoka, Piotr; Ulrich, Georg; Nguyen, Ariana E.; ...

2016-01-13

Here, nanoscale plasmonic phenomena observed in single and bi-layers of molybdenum disulfide (MoS 2) on silicon dioxide (SiO 2) are reported. A scattering type scanning near-field optical microscope (s-SNOM) with a broadband synchrotron radiation (SR) infrared source was used. We also present complementary optical mapping using tunable CO 2-laser radiation. Specifically, there is a correlation of the topography of well-defined MoS 2 islands grown by chemical vapor deposition, as determined by atomic force microscopy, with the infrared (IR) signature of MoS 2. The influence of MoS 2 islands on the SiO 2 phonon resonance is discussed. The results reveal themore » plasmonic character of the MoS 2 structures and their interaction with the SiO 2 phonons leading to an enhancement of the hybridized surface plasmon-phonon mode. A theoretical analysis shows that, in the case of monolayer islands, the coupling of the MoS 2 optical plasmon mode to the SiO 2 surface phonons does not affect the infrared spectrum significantly. For two-layer MoS 2, the coupling of the extra inter-plane acoustic plasmon mode with the SiO 2 surface transverse phonon leads to a remarkable increase of the surface phonon peak at 794 cm -1. This is in agreement with the experimental data. These results show the capability of the s-SNOM technique to study local multiple excitations in complex non-homogeneous structures.« less

Deposition of amorphous carbon thin films by aerosol-assisted CVD method

NASA Astrophysics Data System (ADS)

Fadzilah, A. N.; Dayana, K.; Rusop, M.

2018-05-01

This paper reports on the deposition of amorphous carbon (a-C) by Aerosol-assisted Chemical Vapor Deposition (AACVD) using natural source of camphor oil as the precursor material. 4 samples were deposited at 4 different deposition flow rate from 15 sccm to 20 sccm, with 5 sccm interval for each sample. The analysis includes the electrical, optical and structural analysis of the data. The a-C structure which came from the manipulation of synthesis parameter was characterized by the solar simulator system, UV-VIS-NIR, Raman spectroscope and AFM. The properties of a-C are highly dependent on the deposition techniques and deposition parameters; hence the influences of gas flow rate were studied.

CVD growth of graphene at low temperature

NASA Astrophysics Data System (ADS)

Zeng, Changgan

2012-02-01

Graphene has attracted a lot of research interest owing to its exotic properties and a wide spectrum of potential applications. Chemical vapor deposition (CVD) from gaseous hydrocarbon sources has shown great promises for large-scale graphene growth. However, high growth temperature, typically 1000^oC, is required for such growth. In this talk, I will show a revised CVD route to grow graphene on Cu foils at low temperature, adopting solid and liquid hydrocarbon feedstocks. For solid PMMA and polystyrene precursors, centimeter-scale monolayer graphene films are synthesized at a growth temperature down to 400^oC. When benzene is used as the hydrocarbon source, monolayer graphene flakes with excellent quality are achieved at a growth temperature as low as 300^oC. I will also talk about our recent progress on low-temperature graphene growth using paraterphenyl as precursor. The successful low-temperature growth can be qualitatively understood from the first principles calculations. Our work might pave a way to economical and convenient growth route of graphene, as well as better control of the growth pattern of graphene at low temperature.

Ambipolar transport in CVD grown MoSe2 monolayer using an ionic liquid gel gate dielectric

NASA Astrophysics Data System (ADS)

Ortiz, Deliris N.; Ramos, Idalia; Pinto, Nicholas J.; Zhao, Meng-Qiang; Kumar, Vinayak; Johnson, A. T. Charlie

2018-03-01

CVD grown MoSe2 monolayers were electrically characterized at room temperature in a field effect transistor (FET) configuration using an ionic liquid (IL) as the gate dielectric. During the growth, instead of using MoO3 powder, ammonium heptamolybdate was used for better Mo control of the source and sodium cholate added for lager MoSe2 growth areas. In addition, a high specific capacitance (˜7 μF/cm2) IL was used as the gate dielectric to significantly reduce the operating voltage. The device exhibited ambipolar charge transport at low voltages with enhanced parameters during n- and p-FET operation. IL gating thins the Schottky barrier at the metal/semiconductor interface permitting efficient charge injection into the channel and reduces the effects of contact resistance on device performance. The large specific capacitance of the IL was also responsible for a much higher induced charge density compared to the standard SiO2 dielectric. The device was successfully tested as an inverter with a gain of ˜2. Using a common metal for contacts simplifies fabrication of this ambipolar device, and the possibility of radiative recombination of holes and electrons could further extend its use in low power optoelectronic applications.

Vacuum vapor deposition gun assembly

DOEpatents

Zeren, Joseph D.

1985-01-01

A vapor deposition gun assembly includes a hollow body having a cylindrical outer surface and an end plate for holding an adjustable heat sink, a hot hollow cathode gun, two magnets for steering the plasma from the gun into a crucible on the heat sink, and a shutter for selectively covering and uncovering the crucible.

Interwell coupling effect in Si/SiGe quantum wells grown by ultra high vacuum chemical vapor deposition

PubMed Central

Wang, Rui; Lu, Fen; Fan, Wei Jun; Liu, Chong Yang; Loh, Ter-Hoe; Nguyen, Hoai Son; Narayanan, Balasubramanian

2007-01-01

Si/Si0.66Ge0.34coupled quantum well (CQW) structures with different barrier thickness of 40, 4 and 2 nm were grown on Si substrates using an ultra high vacuum chemical vapor deposition (UHV-CVD) system. The samples were characterized using high resolution x-ray diffraction (HRXRD), cross-sectional transmission electron microscopy (XTEM) and photoluminescence (PL) spectroscopy. Blue shift in PL peak energy due to interwell coupling was observed in the CQWs following increase in the Si barrier thickness. The Si/SiGe heterostructure growth process and theoretical band structure model was validated by comparing the energy of the no-phonon peak calculated by the 6 + 2-bandk·pmethod with experimental PL data. Close agreement between theoretical calculations and experimental data was obtained.

The synthesis of graphene at different deposition time from palm oil via thermal chemical vapor deposition

NASA Astrophysics Data System (ADS)

Salifairus, M. J.; Soga, T.; Alrokayan, Salman A. H.; Khan, Haseeb A.; Rusop, M.

2018-05-01

The basic building of graphitic materials is graphene that can range from zero-dimensional to three-dimensional. Graphene is a single atomic layer of sp2 bonded carbon atoms. It becomes most potential new materials to replace silicon due to its fascinating properties. In this study, the graphene growth was observed at different deposition time. The 1cm x 1cm polycrystalline nickel substrate was cleaned by etching process. The palm oil, carbon source, was placed in the precursor furnace and the nickel substrate was placed in the second furnace (deposition furnace). The palm oil will mix with Argon and Hydrogen gas was used as carrier gas in the CVD under certain temperature and pressure to undergo pyrolysis process. The deposition temperature was set at 900 °C and the deposition time was varied from 5 - 60 minutes. The graphene was growth at ambient pressure in the CVD system. Raman spectrometer and atomic force microscopy revealed the structural properties and surface topography of the grapheme on the nickel substrate. The D, G and 2D band appear approximately at 1378 cm-1, 1580 cm-1 and 2696 cm-1. It can be concluded that the graphene has successfully synthesized at different deposition time.

Aerosol-assisted chemical vapor deposition of ultra-thin CuOx films as hole transport material for planar perovskite solar cells

NASA Astrophysics Data System (ADS)

Zhang, Zhixin; Chen, Shuqun; Li, Pingping; Li, Hongyi; Wu, Junshu; Hu, Peng; Wang, Jinshu

This paper reports on the fabrication of CuOx films to be used as hole transporting layer (HTL) in CH3NH3PbI3 perovskite solar cells (PSCs). Ultra-thin CuOx coatings were grown onto FTO substrates for the first time via aerosol-assisted chemical vapor deposition (AACVD) of copper acetylacetonate in methanol. After incorporating into the PSCs prepared at ambient air, a highest power conversion efficiency (PCE) of 8.26% with HTL and of 3.34% without HTL were achieved. Our work represents an important step in the development of low-cost CVD technique for fabricating ultra-thin metal oxide functional layers in thin film photovoltaics.

Solar-induced chemical vapor deposition of diamond-type carbon films

DOEpatents

Pitts, J.R.; Tracy, C.E.; King, D.E.; Stanley, J.T.

1994-09-13

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp[sup 3]-bonded diamond-type carbon films, comprises: (a) providing a volatile hydrocarbon gas/H[sub 2] reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and (b) directing a concentrated solar flux of from about 40 to about 60 watts/cm[sup 2] through said reactant mixture to produce substrate temperatures of about 750 C to about 950 C to activate deposition of the film on said substrate. 11 figs.

Solar-induced chemical vapor deposition of diamond-type carbon films

DOEpatents

Pitts, J. Roland; Tracy, C. Edwin; King, David E.; Stanley, James T.

1994-01-01

An improved chemical vapor deposition method for depositing transparent continuous coatings of sp.sup.3 -bonded diamond-type carbon films, comprising: a) providing a volatile hydrocarbon gas/H.sub.2 reactant mixture in a cold wall vacuum/chemical vapor deposition chamber containing a suitable substrate for said films, at pressure of about 1 to 50 Torr; and b) directing a concentrated solar flux of from about 40 to about 60 watts/cm.sup.2 through said reactant mixture to produce substrate temperatures of about 750.degree. C. to about 950.degree. C. to activate deposition of the film on said substrate.

Convection and chemistry effects in CVD: A 3-D analysis for silicon deposition

NASA Technical Reports Server (NTRS)

Gokoglu, S. A.; Kuczmarski, M. A.; Tsui, P.; Chait, A.

1989-01-01

The computational fluid dynamics code FLUENT has been adopted to simulate the entire rectangular-channel-like (3-D) geometry of an experimental CVD reactor designed for Si deposition. The code incorporated the effects of both homogeneous (gas phase) and heterogeneous (surface) chemistry with finite reaction rates of important species existing in silane dissociation. The experiments were designed to elucidate the effects of gravitationally-induced buoyancy-driven convection flows on the quality of the grown Si films. This goal is accomplished by contrasting the results obtained from a carrier gas mixture of H2/Ar with the ones obtained from the same molar mixture ratio of H2/He, without any accompanying change in the chemistry. Computationally, these cases are simulated in the terrestrial gravitational field and in the absence of gravity. The numerical results compare favorably with experiments. Powerful computational tools provide invaluable insights into the complex physicochemical phenomena taking place in CVD reactors. Such information is essential for the improved design and optimization of future CVD reactors.

Electron Emission Observations from As-Grown and Vacuum-Coated Chemical Vapor Deposited Diamond

NASA Technical Reports Server (NTRS)

Lamouri, A.; Wang, Yaxin; Mearini, G. T.; Krainsky, I. L.; Dayton, J. A., Jr.; Mueller,W.

1996-01-01

Field emission has been observed from chemical vapor deposited diamond grown on Mo and Si substrates. Emission was observed at fields as low as 20 kV/cm. The samples were tested in the as-grown form, and after coating with thin films of Au, CsI, and Ni. The emission current was typically maximum at the onset of the applied field, but was unstable, and decreased rapidly with time from the as-grown films. Thin Au layers, approximately 15 nm thick, vacuum deposited onto the diamond samples significantly improved the stability of the emission current at values approximately equal to those from uncoated samples at the onset of the applied field. Thin layers of CsI, approximately 5 nm thick, were also observed to improve the stability of the emission current but at values less than those from the uncoated samples at the onset of the applied field. While Au and CsI improved the stability of the emission, Ni was observed to have no effect.

Comparison of Two Preparation Methods on Catalytic Activity and Selectivity of Ru-Mo/HZSM5 for Methane Dehydroaromatization

DOE PAGES

Petkovic, Lucia M.; Ginosar, Daniel M.

2014-01-01

Catalytic performance of Mo/HZSM5 and Ru-Mo/HZSM5 catalysts prepared by vaporization-deposition of molybdenum trioxide and impregnation with ammonium heptamolybdate was analyzed in terms of catalyst activity and selectivity, nitrogen physisorption analyses, temperature-programmed oxidation of carbonaceous residues, and temperature-programmed reduction. Vaporization-deposition rendered the catalyst more selective to ethylene and coke than the catalyst prepared by impregnation. This result was assigned to lower interaction of molybdenum carbide with the zeolite acidic sites.

Optical characterization of single-crystal diamond grown by DC arc plasma jet CVD

NASA Astrophysics Data System (ADS)

Hei, Li-fu; Zhao, Yun; Wei, Jun-jun; Liu, Jin-long; Li, Cheng-ming; Lü, Fan-xiu

2017-12-01

Optical centers of single-crystal diamond grown by DC arc plasma jet chemical vapor deposition (CVD) were examined using a low-temperature photoluminescence (PL) technique. The results show that most of the nitrogen-vacancy (NV) complexes are present as NV- centers, although some H2 and H3 centers and B-aggregates are also present in the single-crystal diamond because of nitrogen aggregation resulting from high N2 incorporation and the high mobility of vacancies under growth temperatures of 950-1000°C. Furthermore, emissions of radiation-induced defects were also detected at 389, 467.5, 550, and 588.6 nm in the PL spectra. The reason for the formation of these radiation-induced defects is not clear. Although a Ni-based alloy was used during the diamond growth, Ni-related emissions were not detected in the PL spectra. In addition, the silicon-vacancy (Si-V)-related emission line at 737 nm, which has been observed in the spectra of many previously reported microwave plasma chemical vapor deposition (MPCVD) synthetic diamonds, was absent in the PL spectra of the single-crystal diamond prepared in this work. The high density of NV- centers, along with the absence of Ni-related defects and Si-V centers, makes the single-crystal diamond grown by DC arc plasma jet CVD a promising material for applications in quantum computing.

Processing - microstructure relationships of chemically vapor deposited zirconia fiber coating for environmentally durable silicon carbide/silicon carbide composites

NASA Astrophysics Data System (ADS)

Lee, Jinil

In SiC/SiC ceramic matrix composites, toughness is obtained by adding a fiber coating which provides a weak interface for crack deflection and debonding between the fiber and the matrix. However, the most commonly used fiber coatings, carbon and boron nitride, are unstable in oxidative environments. In the present study, the feasibility of using a chemically vapor deposited zirconia (CVD-ZrO 2) fiber coating as an oxidation-resistant interphase for SiC/SiC composites was investigated. The feasibility of the CVD-ZrO2 coating as a useful interphase for SiC/SiC composites was investigated with emphasis on developing critical processing-microstructure relationships. A study of morphological evolution in the CVD-ZrO2 coating suggested that a size-controlled displacive phase transformation from tetragonal ZrO2 (t-ZrO2) to monoclinic ZrO2 (m-ZrO2) was the key mechanism responsible for the weak interface behavior exhibited by the ZrO2 coating. The pre-delamination occurred as a result of (i) continuous formation of t-ZrO2 nuclei on the deposition surface; (ii) martensitic transformation of the tetragonal phase to a monoclinic phase upon reaching a critical grain size; and (iii) development of significant compressive hoop stresses due to the volume dilation associated with the transformation. We also discovered that low oxygen partial pressure in the CVD reactor was required for the nucleation of t-ZrO2 and was ultimately responsible for the delamination behavior. The effects of oxygen partial pressure on the nucleation behavior of the CVD-ZrO2 coating was systematically studied by intentionally adding the controlled amount of O2 into the CVD chamber. Characterization results suggested that the number density of t-ZrO2 nuclei apparently decreased with increasing the oxygen partial pressure from 0.004 to 1.6 Pa. Also, the coating layer became more columnar and contained larger m-ZrO2 grains. The observed relationships between the oxygen partial pressure and the morphological

Layer Dependence and Light Tuning Surface Potential of 2D MoS2 on Various Substrates.

PubMed

Li, Feng; Qi, Junjie; Xu, Minxuan; Xiao, Jiankun; Xu, Yuliang; Zhang, Xiankun; Liu, Shuo; Zhang, Yue

2017-04-01

Here surface potential of chemical vapor deposition (CVD) grown 2D MoS 2 with various layers is reported, and the effect of adherent substrate and light illumination on surface potential of monolayer MoS 2 are investigated. The surface potential of MoS 2 on Si/SiO 2 substrate decreases from 4.93 to 4.84 eV with the increase in the number of layer from 1 to 4 or more. Especially, the surface potentials of monolayer MoS 2 are strongly dependent on its adherent substrate, which are determined to be 4.55, 4.88, 4.93, 5.10, and 5.50 eV on Ag, graphene, Si/SiO 2 , Au, and Pt substrates, respectively. Light irradiation is introduced to tuning the surface potential of monolayer MoS 2 , with the increase in light intensity, the surface potential of MoS 2 on Si/SiO 2 substrate decreases from 4.93 to 4.74 eV, while increases from 5.50 to 5.56 eV on Pt substrate. The I-V curves on vertical of monolayer MoS 2 /Pt heterojunction show the decrease in current with the increase of light intensity, and Schottky barrier height at MoS 2 /Pt junctions increases from 0.302 to 0.342 eV. The changed surface potential can be explained by trapped charges on surface, photoinduced carriers, charge transfer, and local electric field. © 2017 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Fluorescent carbon quantum dots synthesized by chemical vapor deposition: An alternative candidate for electron acceptor in polymer solar cells

NASA Astrophysics Data System (ADS)

Cui, Bo; Yan, Lingpeng; Gu, Huimin; Yang, Yongzhen; Liu, Xuguang; Ma, Chang-Qi; Chen, Yongkang; Jia, Husheng

2018-01-01

Excitation-wavelength-dependent blue-greenish fluorescent carbon quantum dots (CQDs) with graphite structure were synthesized by chemical vapor deposition (CVD) method. In comparison with those synthesized by hydrothermal method (named H-CQDs), C-CQDs have less hydrophilic terminal groups, showing good solubility in common organic solvents. Furthermore, these synthesized C-CQDs show a low LUMO energy level (LUMO = -3.84 eV), which is close to that of phenyl-C61-butyric acid methyl ester (PC61BM, LUMO = -4.01 eV), the most widely used electron acceptor in polymer solar cells. Photoluminescence quenching of the poly(3-hexylthiophene-2,5-diyl):C-CQDs blended film (P3HT:C-CQDs) indicated that a photo-induced charge transfer between P3HT and C-CQDs occurs in such a composite film. Bulk heterojunction solar cells using C-CQDs as electron acceptors or doping materials were fabricated and tested. High fill factors were achieved for these C-CQDs based polymer solar cells, demonstrating that CQDs synthesized by CVD could be alternative to the fullerene derivatives for applying in polymer solar cells.

Evaluation of infrared thermography as a diagnostic tool in CVD applications

NASA Astrophysics Data System (ADS)

Johnson, E. J.; Hyer, P. V.; Culotta, P. W.; Clark, I. O.

1998-05-01

This research is focused on the feasibility of using infrared temperature measurements on the exterior of a chemical vapor deposition (CVD) reactor to ascertain both real-time information on the operating characteristics of a CVD system and provide data which could be post-processed to provide quantitative information for research and development on CVD processes. Infrared thermography techniques were used to measure temperatures on a horizontal CVD reactor of rectangular cross section which were correlated with the internal gas flow field, as measured with the laser velocimetry (LV) techniques. For the reactor tested, thermal profiles were well correlated with the gas flow field inside the reactor. Correlations are presented for nitrogen and hydrogen carrier gas flows. The infrared data were available to the operators in real time with sufficient sensitivity to the internal flow field so that small variations such as misalignment of the reactor inlet could be observed. The same data were post-processed to yield temperature measurements at known locations on the reactor surface. For the experiments described herein, temperatures associated with approximately 3.3 mm 2 areas on the reactor surface were obtained with a precision of ±2°C. These temperature measurements were well suited for monitoring a CVD production reactor, development of improved thermal boundary conditions for use in CFD models of reactors, and for verification of expected thermal conditions.

Photoluminescence Segmentation within Individual Hexagonal Monolayer Tungsten Disulfide Domains Grown by Chemical Vapor Deposition.

PubMed

Sheng, Yuewen; Wang, Xiaochen; Fujisawa, Kazunori; Ying, Siqi; Elias, Ana Laura; Lin, Zhong; Xu, Wenshuo; Zhou, Yingqiu; Korsunsky, Alexander M; Bhaskaran, Harish; Terrones, Mauricio; Warner, Jamie H

2017-05-03

We show that hexagonal domains of monolayer tungsten disulfide (WS 2 ) grown by chemical vapor deposition (CVD) with powder precursors can have discrete segmentation in their photoluminescence (PL) emission intensity, forming symmetric patterns with alternating bright and dark regions. Two-dimensional maps of the PL reveal significant reduction within the segments associated with the longest sides of the hexagonal domains. Analysis of the PL spectra shows differences in the exciton to trion ratio, indicating variations in the exciton recombination dynamics. Monolayers of WS 2 hexagonal islands transferred to new substrates still exhibit this PL segmentation, ruling out local strain in the regions as the dominant cause. High-power laser irradiation causes preferential degradation of the bright segments by sulfur removal, indicating the presence of a more defective region that is higher in oxidative reactivity. Atomic force microscopy (AFM) images of topography and amplitude modes show uniform thickness of the WS 2 domains and no signs of segmentation. However, AFM phase maps do show the same segmentation of the domain as the PL maps and indicate that it is caused by some kind of structural difference that we could not clearly identify. These results provide important insights into the spatially varying properties of these CVD-grown transition metal dichalcogenide materials, which may be important for their effective implementation in fast photo sensors and optical switches.

The use of CVD diamond burs for ultraconservative cavity preparations: a report of two cases.

PubMed

Carvalho, Carlos Augusto R; Fagundes, Ticiane C; Barata, Terezinha J E; Trava-Airoldi, Vladimir Jesus; Navarro, Maria Fidela L

2007-01-01

During the past decades, scientific developments in cutting instruments have changed the conventional techniques used to remove caries lesions. Ultrasound emerged as an alternative for caries removal since the 1950s. However, the conventional technology for diamond powder aggregation with nickel metallic binders could not withstand ultrasonic power. Around 5 years ago, an alternative approach using chemical vapor deposition (CVD) resulted in synthetic diamond technology. CVD diamond burs are obtained with high adherence of the diamond as a unique stone on the metallic surface with excellent abrading performance. This technology allows for diamond deposition with coalescent granulation in different formats of substrates. When connected to an ultrasonic handpiece, CVD diamond burs become an option for cavity preparation, maximizing preservation of tooth structure. Potential advantages such as reduced noise, minimal damage to the gingival tissue, extended bur durability, improved proximal cavity access, reduced risk of hitting the adjacent tooth resulting from the high inclination angles, and minimal patient's risk of metal contamination. These innovative instruments also potentially eliminate some problems regarding decreased cutting efficiency of conventional diamond burs. This clinical report presents the benefits of using CVD diamond burs coupled with an ultrasonic handpiece in the treatment of incipient caries. CVD diamond burs coupled with an ultrasonic device offer a promising alternative for removal of carious lesions when ultraconservative cavity preparations are required. Additionally, this system provides a less-painful technique for caries removal, with minimal noise.

Enthalpy and high temperature relaxation kinetics of stable vapor-deposited glasses of toluene

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bhattacharya, Deepanjan; Sadtchenko, Vlad, E-mail: vlad@gwu.edu

Stable non-crystalline toluene films of micrometer and nanometer thicknesses were grown by vapor deposition at distinct rates and probed by fast scanning calorimetry. Fast scanning calorimetry is shown to be extremely sensitive to the structure of the vapor-deposited phase and was used to characterize simultaneously its kinetic stability and its thermodynamic properties. According to our analysis, transformation of vapor-deposited samples of toluene during heating with rates in excess 10{sup 5} K s{sup −1} follows the zero-order kinetics. The transformation rate correlates strongly with the initial enthalpy of the sample, which increases with the deposition rate according to sub-linear law. Analysismore » of the transformation kinetics of vapor-deposited toluene films of various thicknesses reveal a sudden increase in the transformation rate for films thinner than 250 nm. The change in kinetics seems to correlate with the surface roughness scale of the substrate. The implications of these findings for the formation mechanism and structure of vapor-deposited stable glasses are discussed.« less

Robofurnace: A semi-automated laboratory chemical vapor deposition system for high-throughput nanomaterial synthesis and process discovery

PubMed Central

Oliver, C. Ryan; Westrick, William; Koehler, Jeremy; Brieland-Shoultz, Anna; Anagnostopoulos-Politis, Ilias; Cruz-Gonzalez, Tizoc; Hart, A. John

2013-01-01

Laboratory research and development on new materials, such as nanostructured thin films, often utilizes manual equipment such as tube furnaces due to its relatively low cost and ease of setup. However, these systems can be prone to inconsistent outcomes due to variations in standard operating procedures and limitations in performance such as heating and cooling rates restrict the parameter space that can be explored. Perhaps more importantly, maximization of research throughput and the successful and efficient translation of materials processing knowledge to production-scale systems, relies on the attainment of consistent outcomes. In response to this need, we present a semi-automated lab-scale chemical vapor deposition (CVD) furnace system, called “Robofurnace.” Robofurnace is an automated CVD system built around a standard tube furnace, which automates sample insertion and removal and uses motion of the furnace to achieve rapid heating and cooling. The system has a 10-sample magazine and motorized transfer arm, which isolates the samples from the lab atmosphere and enables highly repeatable placement of the sample within the tube. The system is designed to enable continuous operation of the CVD reactor, with asynchronous loading/unloading of samples. To demonstrate its performance, Robofurnace is used to develop a rapid CVD recipe for carbon nanotube (CNT) forest growth, achieving a 10-fold improvement in CNT forest mass density compared to a benchmark recipe using a manual tube furnace. In the long run, multiple systems like Robofurnace may be linked to share data among laboratories by methods such as Twitter. Our hope is Robofurnace and like automation will enable machine learning to optimize and discover relationships in complex material synthesis processes. PMID:24289435

Physical vapor deposition and metalorganic chemical vapor deposition of yttria-stabilized zirconia thin films

NASA Astrophysics Data System (ADS)

Kaufman, David Y.

Two vapor deposition techniques, dual magnetron oblique sputtering (DMOS) and metalorganic chemical vapor deposition (MOCVD), have been developed to produce yttria-stabilized zirconia (YSZ) films with unique microstructures. In particular, biaxially textured thin films on amorphous substrates and dense thin films on porous substrates have been fabricated by DMOS and MOCVD, respectively. DMOS YSZ thin films were deposited by reactive sputtering onto Si (native oxide surface) substrates positioned equidistant between two magnetron sources such that the fluxes arrived at oblique angles with respect to the substrate normal. Incident fluxes from two complimentary oblique directions were necessary for the development of biaxial texture. The films displayed a strong [001] out-of-plane orientation with the <110> direction in the film aligned with the incident flux. Biaxial texture improved with increasing oblique angle and film thickness, and was stronger for films deposited with Ne than with Ar. The films displayed a columnar microstructure with grain bundling perpendicular to the projected flux direction, the degree of which increased with oblique angle and thickness. The texture decreased by sputtering at pressures at which the flux of sputtered atoms was thermalized. These results suggested that grain alignment is due to directed impingement of both sputtered atoms and reflected energetic neutrals. The best texture, a {111} phi FWHM of 23°, was obtained in a 4.8 mum thick film deposited at an oblique angle of 56°. MOCVD YSZ thin films were deposited in a vertical cold-wall reactor using Zr(tmhd)4 and Y(tmhd)3 precursors. Fully stabilized YSZ films with 9 mol% could be deposited by controlling the bubbler temperatures. YSZ films on Si substrates displayed a transition at 525°C from surface kinetic limited growth, with an activation energy of 5.5 kJ/mole, to mass transport limited growth. Modifying the reactor by lowering the inlet height and introducing an Ar baffle

Aerosol-Assisted Chemical Vapor Deposited Thin Films for Space Photovoltaics

NASA Technical Reports Server (NTRS)

Hepp, Aloysius F.; McNatt, Jeremiah; Dickman, John E.; Jin, Michael H.-C.; Banger, Kulbinder K.; Kelly, Christopher V.; AquinoGonzalez, Angel R.; Rockett, Angus A.

2006-01-01

Copper indium disulfide thin films were deposited via aerosol-assisted chemical vapor deposition using single source precursors. Processing and post-processing parameters were varied in order to modify morphology, stoichiometry, crystallography, electrical properties, and optical properties in order to optimize device-quality material. Growth at atmospheric pressure in a horizontal hot-wall reactor at 395 C yielded best device films. Placing the susceptor closer to the evaporation zone and flowing a more precursor-rich carrier gas through the reactor yielded shinier, smoother, denser-looking films. Growth of (112)-oriented films yielded more Cu-rich films with fewer secondary phases than growth of (204)/(220)-oriented films. Post-deposition sulfur-vapor annealing enhanced stoichiometry and crystallinity of the films. Photoluminescence studies revealed four major emission bands (1.45, 1.43, 1.37, and 1.32 eV) and a broad band associated with deep defects. The highest device efficiency for an aerosol-assisted chemical vapor deposited cell was 1.03 percent.

Surface passivation of InGaP/GaAs HBT using silicon-nitride film deposited by ECR CVD plasma

NASA Astrophysics Data System (ADS)

Manera, L. T.; Zoccal, L. B.; Diniz, J. A.; Tatsch, P. J.; Doi, I.

2008-07-01

In this paper we have developed a passivation technique with silicon-nitride (SiN X) film that requires no surface pre-treatment, and is fully compatible to monolithic microwave integrated circuits (MMICs). The nitride depositions were carried out by ECR-CVD (electron cyclotron resonance-chemical vapor deposition) directly over InGaP/GaAs heterojunction structures, which are used for heterojunction bipolar transistors (HBTs). Optical emission spectrometry (OES) was used for plasma characterization, and low formation of H and NH molecules in the gas phase was detected at pressure of 2.5 mTorr. These molecules can degrade III-V semiconductor surfaces due to the preferential loss of As or P and hydrogen incorporation at the substrate. The substrates were cleaned with organic solvents using a Sox-let distillate. The ECR depositions were carried out at a fixed substrate temperature of 20 °C, SiH 4/N 2 flow ratio of 1, Ar flow of 5 sccm pressure of 2.5 mTorr and microwave (2.45 GHz) power of 250 W and RF (13.56 MHz) power of 4 W. We have applied this film for InGaP/GaAs HBT fabrication process with excellent results, where two major contribuiton is related to this passivation technique, the enhancement in the transistor dc gain β and the improvement in the signal-to-noise ratio when compared unpassivated and passivated devices.

Plasma CVD of hydrogenated boron-carbon thin films from triethylboron

NASA Astrophysics Data System (ADS)

Imam, Mewlude; Höglund, Carina; Schmidt, Susann; Hall-Wilton, Richard; Birch, Jens; Pedersen, Henrik

2018-01-01

Low-temperature chemical vapor deposition (CVD) of B—C thin films is of importance for neutron voltaics and semiconductor technology. The highly reactive trialkylboranes, with alkyl groups of 1-4 carbon atoms, are a class of precursors that have been less explored for low-temperature CVD of B—C films. Herein, we demonstrate plasma CVD of B—C thin films using triethylboron (TEB) as a single source precursor in an Ar plasma. We show that the film density and B/C ratio increases with increasing plasma power, reaching a density of 2.20 g/cm3 and B/C = 1.7. This is attributed to a more intense energetic bombardment during deposition and more complete dissociation of the TEB molecule in the plasma at higher plasma power. The hydrogen content in the films ranges between 14 and 20 at. %. Optical emission spectroscopy of the plasma shows that BH, CH, C2, and H are the optically active plasma species from TEB. We suggest a plasma chemical model based on β-hydrogen elimination of C2H4 to form BH3, in which BH3 and C2H4 are then dehydrogenated to form BH and C2H2. Furthermore, C2H2 decomposes in the plasma to produce C2 and CH, which together with BH and possibly BH3-x(C2H5)x are the film forming species.

Frictional behavior of atomically thin sheets: hexagonal-shaped graphene islands grown on copper by chemical vapor deposition.

PubMed

Egberts, Philip; Han, Gang Hee; Liu, Xin Z; Johnson, A T Charlie; Carpick, Robert W

2014-05-27

Single asperity friction experiments using atomic force microscopy (AFM) have been conducted on chemical vapor deposited (CVD) graphene grown on polycrystalline copper foils. Graphene substantially lowers the friction force experienced by the sliding asperity of a silicon AFM tip compared to the surrounding oxidized copper surface by a factor ranging from 1.5 to 7 over loads from the adhesive minimum up to 80 nN. No damage to the graphene was observed over this range, showing that friction force microscopy serves as a facile, high contrast probe for identifying the presence of graphene on Cu. Consistent with studies of epitaxially grown, thermally grown, and mechanically exfoliated graphene films, the friction force measured between the tip and these CVD-prepared films depends on the number of layers of graphene present on the surface and reduces friction in comparison to the substrate. Friction results on graphene indicate that the layer-dependent friction properties result from puckering of the graphene sheet around the sliding tip. Substantial hysteresis in the normal force dependence of friction is observed with repeated scanning without breaking contact with a graphene-covered region. Because of the hysteresis, friction measured on graphene changes with time and maximum applied force, unless the tip slides over the edge of the graphene island or contact with the surface is broken. These results also indicate that relatively weak binding forces exist between the copper foil and these CVD-grown graphene sheets.

High efficiency epitaxial GaAs/GaAs and GaAs/Ge solar cell technology using OM/CVD

NASA Technical Reports Server (NTRS)

Wang, K. L.; Yeh, Y. C. M.; Stirn, R. J.; Swerdling, S.

1980-01-01

A technology for fabricating high efficiency, thin film GaAs solar cells on substrates appropriate for space and/or terrestrial applications was developed. The approach adopted utilizes organometallic chemical vapor deposition (OM-CVD) to form a GaAs layer epitaxially on a suitably prepared Ge epi-interlayer deposited on a substrate, especially a light weight silicon substrate which can lead to a 300 watt per kilogram array technology for space. The proposed cell structure is described. The GaAs epilayer growth on single crystal GaAs and Ge wafer substrates were investigated.

Fabrication of nanostructured electrodes and interfaces using combustion CVD

NASA Astrophysics Data System (ADS)

Liu, Ying

Reducing fabrication and operation costs while maintaining high performance is a major consideration for the design of a new generation of solid-state ionic devices such as fuel cells, batteries, and sensors. The objective of this research is to fabricate nanostructured materials for energy storage and conversion, particularly porous electrodes with nanostructured features for solid oxide fuel cells (SOFCs) and high surface area films for gas sensing using a combustion CVD process. This research started with the evaluation of the most important deposition parameters: deposition temperature, deposition time, precursor concentration, and substrate. With the optimum deposition parameters, highly porous and nanostructured electrodes for low-temperature SOFCs have been then fabricated. Further, nanostructured and functionally graded La0.8Sr0.2MnO2-La 0.8SrCoO3-Gd0.1Ce0.9O2 composite cathodes were fabricated on YSZ electrolyte supports. Extremely low interfacial polarization resistances (i.e. 0.43 Ocm2 at 700°C) and high power densities (i.e. 481 mW/cm2 at 800°C) were generated at operating temperature range of 600°C--850°C. The original combustion CVD process is modified to directly employ solid ceramic powder instead of clear solution for fabrication of porous electrodes for solid oxide fuel cells. Solid particles of SOFC electrode materials suspended in an organic solvent were burned in a combustion flame, depositing a porous cathode on an anode supported electrolyte. Combustion CVD was also employed to fabricate highly porous and nanostructured SnO2 thin film gas sensors with Pt interdigitated electrodes. The as-prepared SnO2 gas sensors were tested for ethanol vapor sensing behavior in the temperature range of 200--500°C and showed excellent sensitivity, selectivity, and speed of response. Moreover, several novel nanostructures were synthesized using a combustion CVD process, including SnO2 nanotubes with square-shaped or rectangular cross sections, well

Reproducibility of CVD diamond detectors for radiotherapy dosimetry

NASA Astrophysics Data System (ADS)

Betzel, G. T.; Lansley, S. P.; McKay, D.; Meyer, J.

2012-11-01

Three in-house X-ray detectors based on diamond chemical vapor deposition (CVD) from the same manufactured batch of single crystal films were investigated for their reproducibility. Leakage current, priming dose, response dynamics, dose linearity, dependence on dose rate and angular dependence were used to evaluate differences between detectors. Slight differences were seen in leakage currents before (<1.5 pA) and after (<12 pA) irradiation. A priming dose of ˜7 Gy and rise and fall times of 2 s were found for all three detectors. Sensitivities differed by up to 10%. Dependence on dose rate were similar (∆=0.92-0.94). Angular dependence was minimal (97-102% avg.). Differences in detector performance appeared to be primarily due to film thickness, which can significantly change sensitivities (nC Gy-1) and applied fields (V μm-1) for detectors with small sensitive volumes. Results suggest that preselection of CVD diamond films according to thickness in addition to material quality would be required to avoid individual calibration, which is performed for commercially available natural diamond detectors.

Centimeter Scale Patterned Growth of Vertically Stacked Few Layer Only 2D MoS2/WS2 van der Waals Heterostructure.

PubMed

Choudhary, Nitin; Park, Juhong; Hwang, Jun Yeon; Chung, Hee-Suk; Dumas, Kenneth H; Khondaker, Saiful I; Choi, Wonbong; Jung, Yeonwoong

2016-05-05

Two-dimensional (2D) van der Waal (vdW) heterostructures composed of vertically-stacked multiple transition metal dichalcogenides (TMDs) such as molybdenum disulfide (MoS2) and tungsten disulfide (WS2) are envisioned to present unprecedented materials properties unobtainable from any other material systems. Conventional fabrications of these hybrid materials have relied on the low-yield manual exfoliation and stacking of individual 2D TMD layers, which remain impractical for scaled-up applications. Attempts to chemically synthesize these materials have been recently pursued, which are presently limited to randomly and scarcely grown 2D layers with uncontrolled layer numbers on very small areas. Here, we report the chemical vapor deposition (CVD) growth of large-area (>2 cm(2)) patterned 2D vdW heterostructures composed of few layer, vertically-stacked MoS2 and WS2. Detailed structural characterizations by Raman spectroscopy and high-resolution/scanning transmission electron microscopy (HRTEM/STEM) directly evidence the structural integrity of two distinct 2D TMD layers with atomically sharp vdW heterointerfaces. Electrical transport measurements of these materials reveal diode-like behavior with clear current rectification, further confirming the formation of high-quality heterointerfaces. The intrinsic scalability and controllability of the CVD method presented in this study opens up a wide range of opportunities for emerging applications based on the unconventional functionalities of these uniquely structured materials.

Two-step growth of two-dimensional WSe 2/MoSe 2 heterostructures

DOE PAGES

Gong, Yongji; Lei, Sidong; Lou, Jun; ...

2015-08-03

Two dimensional (2D) materials have attracted great attention due to their unique properties and atomic thickness. Although various 2D materials have been successfully synthesized with different optical and electrical properties, a strategy for fabricating 2D heterostructures must be developed in order to construct more complicated devices for practical applications. Here we demonstrate for the first time a two-step chemical vapor deposition (CVD) method for growing transition-metal dichalcogenide (TMD) heterostructures, where MoSe 2 was synthesized first and followed by an epitaxial growth of WSe 2 on the edge and on the top surface of MoSe 2. Compared to previously reported one-stepmore » growth methods, this two-step growth has the capability of spatial and size control of each 2D component, leading to much larger (up to 169 μm) heterostructure size, and cross-contamination can be effectively minimized. Furthermore, this two-step growth produces well-defined 2H and 3R stacking in the WSe 2/MoSe 2 bilayer regions and much sharper in-plane interfaces than the previously reported MoSe 2/WSe 2 heterojunctions obtained from one-step growth methods. The resultant heterostructures with WSe 2/MoSe 2 bilayer and the exposed MoSe 2 monolayer display rectification characteristics of a p-n junction, as revealed by optoelectronic tests, and an internal quantum efficiency of 91% when functioning as a photodetector. As a result, a photovoltaic effect without any external gates was observed, showing incident photon to converted electron (IPCE) efficiencies of approximately 0.12%, providing application potential in electronics and energy harvesting.« less

Field electron emission from diamond and related films synthesized by plasma enhanced chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lu, Xianfeng

The focus of this thesis is the study of the field electron emission (FEE) of diamond and related films synthesized by plasma enhanced chemical vapor deposition. The diamond and related films with different morphologies and compositions were prepared in a microwave plasma-enhanced chemical vapor deposition (CVD) reactor and a hot filament CVD reactor. Various analytical techniques including scanning electron microscopy (SEM), atomic force microscopy (AFM), and Raman spectroscopy were employed to characterize the surface morphology and chemical composition. The influence of surface morphology on the field electron emission property of diamond films was studied. The emission current of well-oriented microcrystalline diamond films is relatively small compared to that of randomly oriented microcrystalline diamond films. Meanwhile, the nanocrystalline diamond film has demonstrated a larger emission current than microcrystalline diamond films. The nanocone structure significantly improves the electron emission current of diamond films due to its strong field enhancement effect. The sp2 phase concentration also has significant influence on the field electron emission property of diamond films. For the diamond films synthesized by gas mixture of hydrogen and methane, their field electron emission properties were enhanced with the increase of methane concentration. The field electron emission enhancement was attributed to the increase of sp2 phase concentration, which increases the electrical conductivity of diamond films. For the diamond films synthesized through graphite etching, the growth rate and nucleation density of diamond films increase significantly with decreasing hydrogen flow rate. The field electron emission properties of the diamond films were also enhanced with the decrease of hydrogen flow rate. The field electron emission enhancement can be also attributed to the increase of the sp 2 phase concentration. In addition, the deviation of the experimental

One-step chemical vapor deposition synthesis and supercapacitor performance of nitrogen-doped porous carbon–carbon nanotube hybrids

PubMed Central

Bulusheva, Lyubov G; Fedorovskaya, Ekaterina O; Shubin, Yury V; Plyusnin, Pavel E; Lonchambon, Pierre; Senkovskiy, Boris V; Ismagilov, Zinfer R; Flahaut, Emmanuel; Okotrub, Alexander V

2017-01-01

Novel nitrogen-doped carbon hybrid materials consisting of multiwalled nanotubes and porous graphitic layers have been produced by chemical vapor deposition over magnesium-oxide-supported metal catalysts. CNx nanotubes were grown on Co/Mo, Ni/Mo, or Fe/Mo alloy nanoparticles, and MgO grains served as a template for the porous carbon. The simultaneous formation of morphologically different carbon structures was due to the slow activation of catalysts for the nanotube growth in a carbon-containing gas environment. An analysis of the obtained products by means of transmission electron microscopy, thermogravimetry and X-ray photoelectron spectroscopy methods revealed that the catalyst's composition influences the nanotube/porous carbon ratio and concentration of incorporated nitrogen. The hybrid materials were tested as electrodes in a 1M H2SO4 electrolyte and the best performance was found for a nitrogen-enriched material produced using the Fe/Mo catalyst. From the electrochemical impedance spectroscopy data, it was concluded that the nitrogen doping reduces the resistance at the carbon surface/electrolyte interface and the nanotubes permeating the porous carbon provide fast charge transport in the cell. PMID:29354339

Influence of Water on Chemical Vapor Deposition of Ni and Co thin films from ethanol solutions of acetylacetonate precursors

PubMed Central

Weiss, Theodor; Zielasek, Volkmar; Bäumer, Marcus

2015-01-01

In chemical vapor deposition experiments with pulsed spray evaporation (PSE-CVD) of liquid solutions of Ni and Co acetylacetonate in ethanol as precursors, the influence of water in the feedstock on the composition and growth kinetics of deposited Ni and Co metal films was systematically studied. Varying the water concentration in the precursor solutions, beneficial as well as detrimental effects of water on the metal film growth, strongly depending on the concentration of water and the β-diketonate in the precursor, were identified. For 2.5 mM Ni(acac)2 precursor solutions, addition of 0.5 vol% water improves growth of a metallic Ni film and reduces carbon contamination, while addition of 1.0 vol% water and more leads to significant oxidation of deposited Ni. By tuning the concentration of both, Ni(acac)2 and water in the precursor solution, the fraction of Ni metal and Ni oxide in the film or the film morphology can be adjusted. In the case of Co(acac)2, even smallest amounts of water promote complete oxidation of the deposited film. All deposited films were analyzed with respect to chemical composition quasi in situ by XPS, their morphology was evaluated after deposition by SEM. PMID:26658547

Low-temperature growth of nitrogen-doped carbon nanofibers by acetonitrile catalytic CVD using Ni-based catalysts

NASA Astrophysics Data System (ADS)

Iwasaki, Tomohiro; Makino, Yuri; Fukukawa, Makoto; Nakamura, Hideya; Watano, Satoru

2016-11-01

To synthesize nitrogen-doped carbon nanofibers (N-CNFs) at high growth rates and low temperatures less than 673 K, nickel species (metallic nickel and nickel oxide) supported on alumina particles were used as the catalysts for an acetonitrile catalytic chemical vapor deposition (CVD) process. The nickel:alumina mass ratio in the catalysts was fixed at 0.05:1. The catalyst precursors were prepared from various nickel salts (nitrate, chloride, sulfate, acetate, and lactate) and then calcined at 1073 K for 1 h in oxidative (air), reductive (hydrogen-containing argon), or inert (pure argon) atmospheres to activate the nickel-based catalysts. The effects of precursors and calcination atmosphere on the catalyst activity at low temperatures were studied. We found that the catalysts derived from nickel nitrate had relatively small crystallite sizes of nickel species and provided N-CNFs at high growth rates of 57 ± 4 g-CNF/g-Ni/h at 673 K in the CVD process using 10 vol% hydrogen-containing argon as the carrier gas of acetonitrile vapor, which were approximately 4 times larger than that of a conventional CVD process. The obtained results reveal that nitrate ions in the catalyst precursor and hydrogen in the carrier gas can contribute effectively to the activation of catalysts in low-temperature CVD. The fiber diameter and nitrogen content of N-CNFs synthesized at high growth rates were several tens of nanometers and 3.5 ± 0.3 at.%, respectively. Our catalysts and CVD process may lead to cost reductions in the production of N-CNFs.

Dispersive growth and laser-induced rippling of large-area singlelayer MoS2 nanosheets by CVD on c-plane sapphire substrate

PubMed Central

Liu, Hongfei; Chi, Dongzhi

2015-01-01

Vapor-phase growth of large-area two-dimensional (2D) MoS2 nanosheets via reactions of sulfur with MoO3 precursors vaporized and transferred from powder sources onto a target substrate has been rapidly progressing. Recent studies revealed that the growth yield of high quality singlelayer (SL) MoS2 is essentially controlled by quite a few parameters including the temperature, the pressure, the amount/weight of loaded source precursors, and the cleanup of old precursors. Here, we report a dispersive growth method where a shadow mask is encapsulated on the substrate to ‘indirectly’ supply the source precursors onto the laterally advancing growth front at elevated temperatures. With this method, we have grown large-area (up to millimeters) SL-MoS2 nanosheets with a collective in-plane orientation on c-plane sapphire substrates. Regular ripples (~1 nm in height and ~50 nm in period) have been induced by laser scanning into the SL-MoS2 nanosheets. The MoS2 ripples easily initiate at the grain boundaries and extend along the atomic steps of the substrate. Such laser-induced ripple structures can be fundamental materials for studying their effects, which have been predicted to be significant but hitherto not evidenced, on the electronic, mechanical, and transport properties of SL-MoS2. PMID:26119325

Observation of Charge Generation and Transfer during CVD Growth of Carbon Nanotubes.

PubMed

Wang, Jiangtao; Liu, Peng; Xia, Bingyu; Wei, Haoming; Wei, Yang; Wu, Yang; Liu, Kai; Zhang, Lina; Wang, Jiaping; Li, Qunqing; Fan, Shoushan; Jiang, Kaili

2016-07-13

Carbon nanotube (CNT) is believed to be the most promising material for next generation IC industries with the prerequisite of chirality specific growth. For various approaches to controlling the chiral indices of CNTs, the key is to deepen the understanding of the catalytic growth mechanism in chemical vapor deposition (CVD). Here we show our discovery that the as-grown CNTs are all negatively charged after Fe-catalyzed CVD process. The extra electrons come from the charge generation and transfer during the growth of CNTs, which indicates that an electrochemical process happens in the surface reaction step. We then designed an in situ measurement equipment, verifying that the CVD growth of CNTs can be regarded as a primary battery system. Furthermore, we found that the variation of the Fermi level in Fe catalysts have a significant impact on the chirality of CNTs when different external electric fields are applied. These findings not only provide a new perspective on the growth of CNTs but also open up new possibilities for controlling the growth of CNTs by electrochemical methods.

Fabricating Large-Area Sheets of Single-Layer Graphene by CVD

NASA Technical Reports Server (NTRS)

Bronikowski, Michael; Manohara, Harish

2008-01-01

This innovation consists of a set of methodologies for preparing large area (greater than 1 cm(exp 2)) domains of single-atomic-layer graphite, also called graphene, in single (two-dimensional) crystal form. To fabricate a single graphene layer using chemical vapor deposition (CVD), the process begins with an atomically flat surface of an appropriate substrate and an appropriate precursor molecule containing carbon atoms attached to substituent atoms or groups. These molecules will be brought into contact with the substrate surface by being flowed over, or sprayed onto, the substrate, under CVD conditions of low pressure and elevated temperature. Upon contact with the surface, the precursor molecules will decompose. The substituent groups detach from the carbon atoms and form gas-phase species, leaving the unfunctionalized carbon atoms attached to the substrate surface. These carbon atoms will diffuse upon this surface and encounter and bond to other carbon atoms. If conditions are chosen carefully, the surface carbon atoms will arrange to form the lowest energy single-layer structure available, which is the graphene lattice that is sought. Another method for creating the graphene lattice includes metal-catalyzed CVD, in which the decomposition of the precursor molecules is initiated by the catalytic action of a catalytic metal upon the substrate surface. Another type of metal-catalyzed CVD has the entire substrate composed of catalytic metal, or other material, either as a bulk crystal or as a think layer of catalyst deposited upon another surface. In this case, the precursor molecules decompose directly upon contact with the substrate, releasing their atoms and forming the graphene sheet. Atomic layer deposition (ALD) can also be used. In this method, a substrate surface at low temperature is covered with exactly one monolayer of precursor molecules (which may be of more than one type). This is heated up so that the precursor molecules decompose and form one

Synthesis of Diamond-Like Carbon Films on Planar and Non-Planar Geometries by the Atmospheric Pressure Plasma Chemical Vapor Deposition Method

NASA Astrophysics Data System (ADS)

Noborisaka, Mayui; Hirako, Tomoaki; Shirakura, Akira; Watanabe, Toshiyuki; Morikawa, Masashi; Seki, Masaki; Suzuki, Tetsuya

2012-09-01

Diamond-like carbon (DLC) films were synthesized by the dielectric barrier discharge-based plasma deposition at atmospheric pressure and their hardness and gas barrier properties were measured. A decrease in size of grains and heating substrate temperature improved nano-hardness up to 3.3 GPa. The gas barrier properties of DLC-coated poly(ethylene terephthalate) (PET) sheets were obtained by 3-5 times of non-coated PET with approximately 0.5 µm in film thickness. The high-gas-barrier DLC films deposited on PET sheets are expected to wrap elevated bridge of the super express and prevent them from neutralization of concrete. We also deposited DLC films inside PET bottles by the microwave surface-wave plasma chemical vapor deposition (CVD) method at near-atmospheric pressure. Under atmospheric pressure, the films were coated uniformly inside the PET bottles, but did not show high gas barrier properties. In this paper, we summarize recent progress of DLC films synthesized at atmospheric pressure with the aimed of food packaging and concrete pillar.

The partitioning of Cu, Au and Mo between liquid and vapor at magmatic temperatures and its implications for the genesis of magmatic-hydrothermal ore deposits

NASA Astrophysics Data System (ADS)

Zajacz, Zoltán; Candela, Philip A.; Piccoli, Philip M.

2017-06-01

The partition coefficients of Cu, Au and Mo between liquid and vapor were determined at P = 130 MPa and T = 900 °C, and P = 90 MPa and T = 650 °C and redox conditions favoring the dominance of reduced S species in the fluid. The experiments at 900 °C were conducted in rapid-quench Molybdenum-Hafnium Carbide externally-heated pressure vessel assemblies, whereas those at 650 °C were run in René41 pressure vessels. The fluids were sampled at run conditions using the synthetic fluid inclusion technique. The host quartz was fractured in situ during the experiments ensuring the entrapment of equilibrium fluids. A new method was developed to quantify the composition of the vapor inclusions from LA-ICPMS analyses relying on the use of boron as an internal standard, an element that fractionates between vapor and liquid to a very small degree. The bulk starting fluid compositions closely represented those expected to exsolve from felsic silicate melts in upper crustal magma reservoirs (0.64 m NaCl, 0.32 m KCl, ±0.2 m HCl and/or 4 wt% S). The experiments were conducted in Au97Cu3 alloy capsules allowing the simultaneous determination of apparent Au and Cu solubilities in the liquid and the vapor phase. Though the apparent metal solubilities were strongly affected by the addition of HCl and S in both phases, all three elements were found to preferentially partition to a liquid phase at all studied conditions with an increasing degree of preference for the liquid in the following order Au < Cu < Mo. The presence of HCl and S did not have a significant effect on the liquid/vapor partition coefficients of either Au or Cu, whereas the presence of HCl slightly shifted the partitioning of Mo in favor of the vapor. Ore metal partition coefficients normalized to that of Na (Ki-Naliq/ vap =Diliq/vap /DNaliq/vap) fall in the following ranges respectively for each studied metal: KAu-Naliq / vap = 0.20 ± 0.07-0.50 ± 0.19 (1σ); KCu-Naliq / vap = 0.36 ± 0.12-0.76 ± 0.22; KMo

Flash vaporization during earthquakes evidenced by gold deposits

NASA Astrophysics Data System (ADS)

Weatherley, Dion K.; Henley, Richard W.

2013-04-01

Much of the world's known gold has been derived from arrays of quartz veins. The veins formed during periods of mountain building that occurred as long as 3 billion years ago, and were deposited by very large volumes of water that flowed along deep, seismically active faults. The veins formed under fluctuating pressures during earthquakes, but the magnitude of the pressure fluctuations and their influence on mineral deposition is not known. Here we use a simple thermo-mechanical piston model to calculate the drop in fluid pressure experienced by a fluid-filled fault cavity during an earthquake. The geometry of the model is constrained using measurements of typical fault jogs, such as those preserved in the Revenge gold deposit in Western Australia, and other gold deposits around the world. We find that cavity expansion generates extreme reductions in pressure that cause the fluid that is trapped in the jog to expand to a very low-density vapour. Such flash vaporization of the fluid results in the rapid co-deposition of silica with a range of trace elements to form gold-enriched quartz veins. Flash vaporization continues as more fluid flows towards the newly expanded cavity, until the pressure in the cavity eventually recovers to ambient conditions. Multiple earthquakes progressively build economic-grade gold deposits.

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene

NASA Astrophysics Data System (ADS)

Amani, Matin; Burke, Robert A.; Proie, Robert M.; Dubey, Madan

2015-03-01

Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >107 and field effect mobilities as high as 16.4 cm2 V-1 s-1. Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W-1. Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform.

Flexible integrated circuits and multifunctional electronics based on single atomic layers of MoS2 and graphene.

PubMed

Amani, Matin; Burke, Robert A; Proie, Robert M; Dubey, Madan

2015-03-20

Two-dimensional materials, such as graphene and its analogues, have been investigated by numerous researchers for high performance flexible and conformal electronic systems, because they offer the ultimate level of thickness scaling, atomically smooth surfaces and high crystalline quality. Here, we use layer-by-layer transfer of large area molybdenum disulphide (MoS2) and graphene grown by chemical vapor deposition (CVD) to demonstrate electronics on flexible polyimide (PI) substrates. On the same PI substrate, we are able to simultaneously fabricate MoS2 based logic, non-volatile memory cells with graphene floating gates, photo-detectors and MoS2 transistors with tunable source and drain contacts. We are also able to demonstrate that these flexible heterostructure devices have very high electronic performance, comparable to four point measurements taken on SiO2 substrates, with on/off ratios >10(7) and field effect mobilities as high as 16.4 cm(2) V(-1) s(-1). Additionally, the heterojunctions show high optoelectronic sensitivity and were operated as photodetectors with responsivities over 30 A W(-1). Through local gating of the individual graphene/MoS2 contacts, we are able to tune the contact resistance over the range of 322-1210 Ω mm for each contact, by modulating the graphene work function. This leads to devices with tunable and multifunctional performance that can be implemented in a conformable platform.

Understanding the Mechanism of SiC Plasma-Enhanced Chemical Vapor Deposition (PECVD) and Developing Routes toward SiC Atomic Layer Deposition (ALD) with Density Functional Theory.

PubMed

Filatova, Ekaterina A; Hausmann, Dennis; Elliott, Simon D

2018-05-02

Understanding the mechanism of SiC chemical vapor deposition (CVD) is an important step in investigating the routes toward future atomic layer deposition (ALD) of SiC. The energetics of various silicon and carbon precursors reacting with bare and H-terminated 3C-SiC (011) are analyzed using ab initio density functional theory (DFT). Bare SiC is found to be reactive to silicon and carbon precursors, while H-terminated SiC is found to be not reactive with these precursors at 0 K. Furthermore, the reaction pathways of silane plasma fragments SiH 3 and SiH 2 are calculated along with the energetics for the methane plasma fragments CH 3 and CH 2 . SiH 3 and SiH 2 fragments follow different mechanisms toward Si growth, of which the SiH 3 mechanism is found to be more thermodynamically favorable. Moreover, both of the fragments were found to show selectivity toward the Si-H bond and not C-H bond of the surface. On the basis of this, a selective Si deposition process is suggested for silicon versus carbon-doped silicon oxide surfaces.

High-Throughput Characterization of Vapor-Deposited Organic Glasses

NASA Astrophysics Data System (ADS)

Dalal, Shakeel S.

Glasses are non-equilibrium materials which on short timescales behave like solids, and on long timescales betray their liquid-like structure. The most common way of preparing a glass is to cool the liquid faster than it can structurally rearrange. Until recently, most preparation schemes for a glass were considered to result in materials with undifferentiable structure and properties. This thesis utilizes a particular preparation method, physical vapor deposition, in order to prepare glasses of organic molecules with properties otherwise considered to be unobtainable. The glasses are characterized using spectroscopic ellipsometry, both as a dilatometric technique and as a reporter of molecular packing. The results reported here develop ellipsometry as a dilatometric technique on a pair of model glass formers, alpha,alpha,beta-trisnaphthylbenzene and indomethacin. It is found that the molecular orientation, as measured by birefringence, can be tuned by changing the substrate temperature during the deposition. In order to efficiently characterize the properties of vapor-deposited indomethacin as a function of substrate temperature, a high-throughput method is developed to capture the entire interesting range of substrate temperatures in just a few experiments. This high-throughput method is then leveraged to describe molecular mobility in vapor-deposited indomethacin. It is also used to demonstrate that the behavior of organic semiconducting molecules agrees with indomethacin quantitatively, and this agreement has implications for emerging technologies such as light-emitting diodes, photovoltaics and thin-film transistors made from organic molecules.

Preparation of Ti species coating hydrotalcite by chemical vapor deposition for photodegradation of azo dye.

PubMed

Xiao, Gaofei; Zeng, HongYan; Xu, Sheng; Chen, ChaoRong; Zhao, Quan; Liu, XiaoJun

2017-10-01

TiO 2 in anatase crystal phase is a very effective catalyst in the photocatalytic oxidation of organic compounds in water. To improve its photocatalytic activity, the Ti-coating MgAl hydrotalcite (Ti-MgAl-LDH) was prepared by chemical vapor deposition (CVD) method. Response surface method (RSM) was employed to evaluate the effect of Ti species coating parameters on the photocatalytic activity, which was found to be affected by the furnace temperature, N 2 flow rate and influx time of precursor gas. Application of RSM successfully increased the photocatalytic efficiency of the Ti-MgAl-LDH in methylene blue photodegradation under UV irradiation, leading to improved economy of the process. According to the results from X-ray diffraction, scanning electron microscopy, Brunner-Emmet-Teller and Barrett-Joyner-Hallender, thermogravimetric and differential thermal analysis, UV-vis diffuse reflectance spectra analyses, the Ti species (TiO 2 or/and Ti 4+ ) were successfully coated on the MgAl-LDH matrix. The Ti species on the surface of the Ti-MgAl-LDH lead to a higher photocatalytic performance than commercial TiO 2 -P25. The results suggested that CVD method provided a new approach for the industrial preparation of Ti-coating MgAl-LDH material with good photocatalytic performances. Copyright © 2017. Published by Elsevier B.V.

Chemical vapor deposition for automatic processing of integrated circuits

NASA Technical Reports Server (NTRS)

Kennedy, B. W.

1980-01-01

Chemical vapor deposition for automatic processing of integrated circuits including the wafer carrier and loading from a receiving air track into automatic furnaces and unloading on to a sending air track is discussed. Passivation using electron beam deposited quartz is also considered.

Scattering of low-energetic atoms and molecules from a boron-doped CVD diamond surface

NASA Astrophysics Data System (ADS)

Allenbach, M.; Neuland, M. B.; Riedo, A.; Wurz, P.

2018-01-01

For the detection of low energetic neutral atoms for the remote sensing of space plasmas, charge state conversion surfaces are used to ionize the neutrals for their subsequent measurement. We investigated a boron-doped Chemical Vapor Deposition (CVD) diamond sample for its suitability to serve as a conversion surface on future space missions, such as NASA's Interstellar Mapping and Acceleration Probe. For H and O atoms incident on conversion surface with energies ranging from 195 to 1000 eV and impact angles from 6° to 15° we measured the angular scattering distributions and the ionization yields. Atomic force microscope and laser ablation ionization mass spectrometry analyses were applied to further characterize the sample. Based on a figure-of-merit, which included the ionization yield and angular scatter distribution, the B-doped CVD surface was compared to other, previously characterized conversion surfaces, including e.g. an undoped CVD diamond with a metallized backside. For particle energies below 390 eV the performance of the B-doped CVD conversion surfaces is comparable to surfaces studied before. For higher energies the figure-of-merit indicates a superior performance. From our studies we conclude that the B-doped CVD diamond sample is well suited for its application on future space missions.

Ultra-thin MoS₂ coated Ag@Si nanosphere arrays as efficient and stable photocathode for solar-driven hydrogen production.

PubMed

Zhou, Qingwei; Su, Shaoqiang; Hu, Die; Lin, Lin; Yan, Zhibo; Gao, Xingsen; Zhang, Zhang; Liu, Junming

2018-01-02

Solar-driven photoelectrochemical (PEC) water splitting has recently attracted much attention. Silicon (Si) is an ideal light absorber for solar energy conversion. However, the poor stability and inefficient surface catalysis of Si photocathode for hydrogen evolution reaction (HER) have been remained as the key challenges. Alternatively, MoS2 has been reported to exhibit the excellent catalysis performance if sufficient active sites for the HER are available. Here, ultra-thin MoS2 nanoflakes are directly synthesized to coat on the arrays of Ag-core Si-shell nanospheres (Ag@Si NSs) using the chemical vapor deposition (CVD). Due to the high surface area ratio and large curvature of these NSs, the as-grown MoS2 nanoflakes can accommodate more active sites. Meanwhile, the high-quality coating of MoS2 nanoflakes on the Ag@Si NSs protects the photocathode from damage during the PEC reaction. A high efficiency with a photocurrent of 33.3 mA cm-2 at a voltage of -0.4 V vs. the reversible hydrogen electrode is obtained. The as-prepared nanostructure as hydrogen photocathode is evidenced to have high stability over 12 hour PEC performance. This work opens opportunities for composite photocathode with high activity and stability using cheap and stable co-catalysts. © 2017 IOP Publishing Ltd.

Epitaxial ferromagnetic single clusters and smooth continuous layers on large area MgO/CVD graphene substrates

NASA Astrophysics Data System (ADS)

Godel, Florian; Meny, Christian; Doudin, Bernard; Majjad, Hicham; Dayen, Jean-François; Halley, David

2018-02-01

We report on the fabrication of ferromagnetic thin layers separated by a MgO dielectric barrier from a graphene-covered substrate. The growth of ferromagnetic metal layers—Co or Ni0.8Fe0.2—is achieved by Molecular Beam Epitaxy (MBE) on a 3 nm MgO(111) epitaxial layer deposited on graphene. In the case of a graphene, grown by chemical vapor deposition (CVD) over Ni substrates, an annealing at 450 °C, under ultra-high-vacuum (UHV) conditions, leads to the dewetting of the ferromagnetic layers, forming well-defined flat facetted clusters whose shape reflects the substrate symmetry. In the case of CVD graphene transferred on SiO2, no dewetting is observed after same annealing. We attribute this difference to the mechanical stress states induced by the substrate, illustrating how it matters for epitaxial construction through graphene. Controlling the growth parameters of such magnetic single objects or networks could benefit to new architectures for catalysis or spintronic applications.

SPE-LEEM Studies on the Surface and Electronic Structure of 2-D Transition Metal Dichalcogenides (Part II)

NASA Astrophysics Data System (ADS)

Jin, Wencan; Yeh, Po-Chun; Zaki, Nader; Zhang, Datong; Sadowski, Jerzy; Al-Mahboob, Abdullah; van de Zande, Arend; Chenet, Daniel; Dadap, Jerry; Herman, Irving; Sutter, Peter; Hone, James; Osgood, Richard

2014-03-01

In this work, we studied the surface and electronic structure of monolayer and few-layer exfoliated MoS2 and WSe2, as well as chemical-vapor-deposition (CVD) grown MoS2, using Spectroscopic Photoemission and Low Energy Electron Microscope (SPE-LEEM). LEEM measurements reveal that, unlike exfoliated MoS2, CVD-grown MoS2 exhibits grain-boundary alterations due to surface strain. However, LEEM and micro-probe low energy electron diffraction show that the quality of CVD-grown MoS2 is comparable to that of exfoliated MoS2. Micrometer-scale angle-resolved photoemission spectroscopy (ARPES) measurement on exfoliated MoS2 and WSe2 single-crystals provides direct evidence for the shifting of the valence band maximum from Γ to K, when the layer number is thinned down to one, as predicted by density functional theory. Our measurements of the k-space resolved electronic structure allow for further comparison with other theoretical predictions and with transport measurements. This work is supported by DOE grant DE-FG 02-04-ER-46157, research carried out in part at the CFN and NSLS, Brookhaven National Laboratory.

Process development for the manufacture of an integrated dispenser cathode assembly using laser chemical vapor deposition

NASA Astrophysics Data System (ADS)

Johnson, Ryan William

2005-07-01

Laser Chemical Vapor Deposition (LCVD) has been shown to have great potential for the manufacture of small, complex, two or three dimensional metal and ceramic parts. One of the most promising applications of the technology is in the fabrication of an integrated dispenser cathode assembly. This application requires the deposition of a boron nitride-molybdenum composite structure. In order to realize this structure, work was done to improve the control and understanding of the LCVD process and to determine experimental conditions conducive to the growth of the required materials. A series of carbon fiber and line deposition studies were used to characterize process-shape relationships and study the kinetics of carbon LCVD. These studies provided a foundation for the fabrication of the first high aspect ratio multi-layered LCVD wall structures. The kinetics studies enabled the formulation of an advanced computational model in the FLUENT CFD package for studying energy transport, mass and momentum transport, and species transport within a forced flow LCVD environment. The model was applied to two different material systems and used to quantify deposition rates and identify rate-limiting regimes. A computational thermal-structural model was also developed using the ANSYS software package to study the thermal stress state within an LCVD deposit during growth. Georgia Tech's LCVD system was modified and used to characterize both boron nitride and molybdenum deposition independently. The focus was on understanding the relations among process parameters and deposit shape. Boron nitride was deposited using a B3 N3H6-N2 mixture and growth was characterized by sporadic nucleation followed by rapid bulk growth. Molybdenum was deposited from the MoCl5-H2 system and showed slow, but stable growth. Each material was used to grow both fibers and lines. The fabrication of a boron nitride-molybdenum composite was also demonstrated. In sum, this work served to both advance the

Modeling physical vapor deposition of energetic materials

DOE PAGES

Shirvan, Koroush; Forrest, Eric C.

2018-03-28

Morphology and microstructure of organic explosive films formed using physical vapor deposition (PVD) processes strongly depends on local surface temperature during deposition. Currently, there is no accurate means of quantifying the local surface temperature during PVD processes in the deposition chambers. This study focuses on using a multiphysics computational fluid dynamics tool, STARCCM+, to simulate pentaerythritol tetranitrate (PETN) deposition. The PETN vapor and solid phase were simulated using the volume of fluid method and its deposition in the vacuum chamber on spinning silicon wafers was modeled. The model also included the spinning copper cooling block where the wafers are placedmore » along with the chiller operating with forced convection refrigerant. Implicit time-dependent simulations in two- and three-dimensional were performed to derive insights in the governing physics for PETN thin film formation. PETN is deposited at the rate of 14 nm/s at 142.9 °C on a wafer with an initial temperature of 22 °C. The deposition of PETN on the wafers was calculated at an assumed heat transfer coefficient (HTC) of 400 W/m 2 K. This HTC proved to be the most sensitive parameter in determining the local surface temperature during deposition. Previous experimental work found noticeable microstructural changes with 0.5 mm fused silica wafers in place of silicon during the PETN deposition. This work showed that fused silica slows initial wafer cool down and results in ~10 °C difference for the surface temperature at 500 μm PETN film thickness. It was also found that the deposition surface temperature is insensitive to the cooling power of the copper block due to the copper block's very large heat capacity and thermal conductivity relative to the heat input from the PVD process. Future work should incorporate the addition of local stress during PETN deposition. Lastly, based on simulation results, it is also recommended to investigate the impact of wafer

Modeling physical vapor deposition of energetic materials

DOE Office of Scientific and Technical Information (OSTI.GOV)

Shirvan, Koroush; Forrest, Eric C.

Morphology and microstructure of organic explosive films formed using physical vapor deposition (PVD) processes strongly depends on local surface temperature during deposition. Currently, there is no accurate means of quantifying the local surface temperature during PVD processes in the deposition chambers. This study focuses on using a multiphysics computational fluid dynamics tool, STARCCM+, to simulate pentaerythritol tetranitrate (PETN) deposition. The PETN vapor and solid phase were simulated using the volume of fluid method and its deposition in the vacuum chamber on spinning silicon wafers was modeled. The model also included the spinning copper cooling block where the wafers are placedmore » along with the chiller operating with forced convection refrigerant. Implicit time-dependent simulations in two- and three-dimensional were performed to derive insights in the governing physics for PETN thin film formation. PETN is deposited at the rate of 14 nm/s at 142.9 °C on a wafer with an initial temperature of 22 °C. The deposition of PETN on the wafers was calculated at an assumed heat transfer coefficient (HTC) of 400 W/m 2 K. This HTC proved to be the most sensitive parameter in determining the local surface temperature during deposition. Previous experimental work found noticeable microstructural changes with 0.5 mm fused silica wafers in place of silicon during the PETN deposition. This work showed that fused silica slows initial wafer cool down and results in ~10 °C difference for the surface temperature at 500 μm PETN film thickness. It was also found that the deposition surface temperature is insensitive to the cooling power of the copper block due to the copper block's very large heat capacity and thermal conductivity relative to the heat input from the PVD process. Future work should incorporate the addition of local stress during PETN deposition. Lastly, based on simulation results, it is also recommended to investigate the impact of wafer

Synthesis of Different Layers of Graphene on Stainless Steel Using the CVD Method

NASA Astrophysics Data System (ADS)

Ghaemi, Ferial; Abdullah, Luqman Chuah; Tahir, Paridah Md; Yunus, Robiah

2016-11-01

In this study, different types of graphene, including single-, few-, and multi-layer graphene, were grown on a stainless steel (SS) mesh coated with Cu catalyst by using the chemical vapor deposition (CVD) method. Even though the SS mesh consisted of different types of metals, such as Fe, Ni, and Cr, which can also be used as catalysts, the reason for coating Cu catalyst on the SS surface had been related to the nature of the Cu, which promotes the growth of graphene with high quality and quantity at low temperature and time. The reaction temperature and run time, as the most important parameters of the CVD method, were varied, and thus led to the synthesis of different layers of graphene. Moreover, the presence of single-, few-, and multi-layer graphene was confirmed by employing two techniques, namely transmission electron microscopy (TEM) and Raman spectroscopy. On top of that, electron dispersive X-ray (EDX) was further applied to establish the influence of the CVD parameters on the growth of graphene.

Synthesis of Different Layers of Graphene on Stainless Steel Using the CVD Method.

PubMed

Ghaemi, Ferial; Abdullah, Luqman Chuah; Tahir, Paridah Md; Yunus, Robiah