MOCVD of Bi2Te3 and Sb2Te3 on GaAs substrates for thin-film thermoelectric applications.

PubMed

Kim, Jeong-Hun; Jung, Yong-Chul; Suh, Sang-Hee; Kim, Jin-Sang

2006-11-01

Metal organic chemical vapour deposition (MOCVD) has been investigated for growth of Bi2Te3 and Sb2Te3 films on (001) GaAs substrates using trimethylbismuth, triethylantimony and diisopropyltelluride as metal organic sources. The surface morphologies of Bi2Te3 and Sb2Te3 films were strongly dependent on the deposition temperatures as it varies from a step-flow growth mode to island coalescence structures depending on deposition temperature. In-plane carrier concentration and electrical Hall mobility were highly dependent on precursor ratio of VI/V and deposition temperature. By optimizing growth parameters, we could clearly observe an electrically intrinsic region of the carrier concentration over the 240 K in Bi2Te3 films. The high Seebeck coefficient (of -160 microVK(-1) for Bi2Te3 and +110 microVK(-1) for Sb2Te3 films, respectively) and good surface morphologies of these materials are promising for the fabrication of a few nm thick periodic Bi2Te3/Sb2Te3 super lattice structures for thin film thermoelectric device applications.

New Quantum Wire Field Effect Transistor

DTIC Science & Technology

2001-06-01

based on V-groove GaAs/AlGaAs heterostructure grown metal organic chemical- vapour -deposition. Electron transport in one-dimensional (1D) systems has... vapour -deposition (MOCVD). This technique produces very long QWR’s in heterostructures with hard wall confinement and large mini band separation. To

Aerosol assisted chemical vapour deposition of gas sensitive SnO2 and Au-functionalised SnO2 nanorods via a non-catalysed vapour solid (VS) mechanism

PubMed Central

Vallejos, Stella; Selina, Soultana; Annanouch, Fatima Ezahra; Gràcia, Isabel; Llobet, Eduard; Blackman, Chris

2016-01-01

Tin oxide nanorods (NRs) are vapour synthesised at relatively lower temperatures than previously reported and without the need for substrate pre-treatment, via a vapour-solid mechanism enabled using an aerosol-assisted chemical vapour deposition method. Results demonstrate that the growth of SnO2 NRs is promoted by a compression of the nucleation rate parallel to the substrate and a decrease of the energy barrier for growth perpendicular to the substrate, which are controlled via the deposition conditions. This method provides both single-step formation of the SnO2 NRs and their integration with silicon micromachined platforms, but also allows for in-situ functionalization of the NRs with gold nanoparticles via co-deposition with a gold precursor. The functional properties are demonstrated for gas sensing, with microsensors using functionalised NRs demonstrating enhanced sensing properties towards H2 compared to those based on non-functionalised NRs. PMID:27334232

The preparation of Fe2O3-ZSM-5 catalysts by metal-organic chemical vapour deposition method for catalytic wet peroxide oxidation of m-cresol.

PubMed

Yang, Yi; Zhang, Huiping; Yan, Ying

2018-03-01

Fe 2 O 3 -ZSM-5 catalysts (0.6 wt% Fe load) prepared by metal-organic chemical vapour deposition (MOCVD) method were evaluated in the catalytic wet peroxide oxidation (CWPO) of m -cresol in a batch reactor. The catalysts have a good iron dispersion and small iron crystalline size, and exhibit high stability during reaction. In addition, the kinetics of the reaction were studied and the initial oxidation rate equation was given. Catalysts were first characterized by N 2 adsorption-desorption isotherms, scanning electronic microscopy, energy-dispersive spectroscopy, X-ray diffraction and X-ray photoelectron spectroscopy. Results show that extra-framework Fe 3+ species (presenting in the form of Fe 2 O 3 ) are successfully loaded on ZSM-5 supports by MOCVD method. Performances of catalysts were tested and effects of different temperature, stirring rate, catalyst amount on hydrogen peroxide, m -cresol, total organic carbon (TOC) conversion and Fe leaching concentration were studied. Results reveal that catalytic activity increased with higher temperature, faster stirring rate and larger catalyst amount. In all circumstances, m -cresol conversion could reach 99% in 0.5-2.5 h, and the highest TOC removal (80.5%) is obtained after 3 h under conditions of 60°C, 400 r.p.m. and catalyst amount of 2.5 g l -1 . The iron-leaching concentrations are less than 1.1 mg l -1 under all conditions. The initial oxidation rate equation [Formula: see text] is obtained for m -cresol degradation with Fe 2 O 3 -ZSM-5 catalysts.

Comparison of AlGaAs Oxidation in MBE and MOCVD Grown Samples

DTIC Science & Technology

2002-01-01

vertical cavity surface emitting lasers ( VCSELs ) [1, 2, 3]. They are also being... molecular beam epitaxy ( MBE ) [5, 6] or metal organic chemical vapor deposition (MOCVD) [7, 8]. The MBE -grown A1GaAs layers are sometimes pseudo or digital...Simultaneous wet-thermal oxidation of MBE and MOCVD grown AlxGal_xAs layers (x = 0.1 to 1.0) showed that the epitaxial growth method does not

Giant spin Hall effect in graphene grown by chemical vapour deposition

NASA Astrophysics Data System (ADS)

Balakrishnan, Jayakumar; Koon, Gavin Kok Wai; Avsar, Ahmet; Ho, Yuda; Lee, Jong Hak; Jaiswal, Manu; Baeck, Seung-Jae; Ahn, Jong-Hyun; Ferreira, Aires; Cazalilla, Miguel A.; Neto, Antonio H. Castro; Özyilmaz, Barbaros

2014-09-01

Advances in large-area graphene synthesis via chemical vapour deposition on metals like copper were instrumental in the demonstration of graphene-based novel, wafer-scale electronic circuits and proof-of-concept applications such as flexible touch panels. Here, we show that graphene grown by chemical vapour deposition on copper is equally promising for spintronics applications. In contrast to natural graphene, our experiments demonstrate that chemically synthesized graphene has a strong spin-orbit coupling as high as 20 meV giving rise to a giant spin Hall effect. The exceptionally large spin Hall angle ~0.2 provides an important step towards graphene-based spintronics devices within existing complementary metal-oxide-semiconductor technology. Our microscopic model shows that unavoidable residual copper adatom clusters act as local spin-orbit scatterers and, in the resonant scattering limit, induce transverse spin currents with enhanced skew-scattering contribution. Our findings are confirmed independently by introducing metallic adatoms-copper, silver and gold on exfoliated graphene samples.

Engineering of InN epilayers by repeated deposition of ultrathin layers in pulsed MOCVD growth

NASA Astrophysics Data System (ADS)

Mickevičius, J.; Dobrovolskas, D.; Steponavičius, T.; Malinauskas, T.; Kolenda, M.; Kadys, A.; Tamulaitis, G.

2018-01-01

Capabilities of repeated deposition of ultrathin layers by pulsed metalorganic chemical vapor deposition (MOCVD) for improvement of structural and luminescence properties of InN thin films on GaN/sapphire templates were studied by varying the growth temperature and the durations of pulse and pause in the delivery of In precursor. X-ray diffraction, atomic force microscopy, and spatially-resolved photoluminescence (PL) spectroscopy were exploited to characterize the structural quality, surface morphology and luminescence properties. Better structural quality is achieved by using longer trimethylindium pulses. However, it is shown that the luminescence properties of InN epilayers correlate with the pause and pulse ratio rather than with their absolute lengths, and the deposition of 1.5-2 monolayers of InN during one growth cycle is optimal to achieve the highest PL intensity. Moreover, the use of temperature ramping enabled achieving the highest PL intensity and the smallest blue shift of the PL band. The luminescence parameters are linked with the structural properties, and domain-like patterns of InN layers are revealed.

Fabrication of InP-pentacene inorganic-organic hybrid heterojunction using MOCVD grown InP for photodetector application

NASA Astrophysics Data System (ADS)

Sarkar, Kalyan Jyoti; Pal, B.; Banerji, P.

2018-04-01

We fabricated inorganic-organic hybrid heterojunction between indium phosphide (InP) and pentacene for photodetector application. InP layer was grown on n-Si substrate by atmospheric pressure metal organic chemical vapour deposition (MOCVD) technique. Morphological properties of InP and pentacene thin film were characterized by atomic force microscopy (AFM). Current-voltage characteristics were investigated in dark and under illumination condition at room temperature. During illumination, different wavelengths of visible and infrared light source were employed to perform the electrical measurement. Enhancement of photocurrent was observed with decreasing in wavelength of incident photo radiation. Ideality factor was found to be 1.92. High rectification ratio of 225 was found at ± 3 V in presence of infrared light source. This study provides new insights of inorganic-organic hybrid heterojunction for broadband photoresponse in visible to near infrared (IR) region under low reverse bias condition.

Hardware Modifications to the US Army Research Laboratory’s Metalorganic Chemical Vapor Deposition (MOCVD) System for Optimization of Complex Oxide Thin Film Fabrication

DTIC Science & Technology

2015-04-01

studies on flow and thermal fields in MOCVD reactor. Chinese Science Bulletin. 2010;55:560–566. 36. Hampdensmith MJ, Kodas TT. Chemical vapor...Chemistry. 1995;19727–750. 47. Xu CY, Hampdensmith MJ, Kodas TT. Aerosol-assisted chemical-vapor- deposition (AACVD) of binary alloy (AGXPD1-X, CUXPD1-X

Growth and characterization of CdS buffer layers by CBD and MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Morrone, A.A.; Huang, C.; Li, S.S.

1999-03-01

Thin film CdS has been widely used in thin-film photovoltaic devices. The most efficient Cu(In,&hthinsp;Ga)Se{sub 2} (CIGS) solar cells reported to date utilized a thin CdS buffer layer prepared by a reactive solution growth technique known as chemical bath deposition (CBD). Considerable effort has been directed to better understand the role and find a replacement for the CBD CdS process in CIGS-based solar cells. We reported a low temperature ({approximately}150&hthinsp;{degree}C) Metalorganic Chemical Vapor Deposition (MOCVD) CdS thin film buffer layer process for CIGS absorbers. Many prior studies have reported that CBD CdS contains a mixture of crystal structures. Recent investigationsmore » of CBD CdS thin films by ellipsometry suggested a multilayer structure. In this study we compare CdS thin films prepared by CBD and MOCVD and the effects of annealing. TED and XRD are used to characterize the crystal structure, the film microstructure is studied by HRTEM, and the optical properties are studied by Raman and spectrophotometry. All of these characterization techniques reveal superior crystalline film quality for CdS films grown by MOCVD compared to those grown by CBD. Dual Beam Optical Modulation (DBOM) studies showed that the MOCVD and CBD CdS buffer layer processes have nearly the same effect on CIGS absorbers when combined with a cadmium partial electrolyte aqueous dip. {copyright} {ital 1999 American Institute of Physics.}« less

The modelling routes for the chemical vapour deposition process: application to Si 1- xGe x deposition

NASA Astrophysics Data System (ADS)

Pons, M.; Bernard, C.; Rouch, H.; Madar, R.

1995-10-01

The purpose of this article is to present the modelling routes for the chemical vapour deposition process with a special emphasis on mass transport models with near local thermochemical equilibrium imposed in the gas-phase and at the deposition surface. The theoretical problems arising from the linking of the two selected approaches, thermodynamics and mass transport, are shown and a solution procedure is proposed. As an illustration, selected results of thermodynamic and mass transport analysis and of the coupled approach showed that, for the deposition of Si 1- xGe x solid solution at 1300 K (system SiGeClHAr), the thermodynamic heterogeneous stability of the reactive gases and the thermal diffusion led to the germanium depletion of the deposit.

Microstructure study of ZnO thin films on Si substrate grown by MOCVD

NASA Astrophysics Data System (ADS)

Huang, Jingyun; Ye, Zhizhen; Lu, Huanming; Wang, Lei; Zhao, Binghui; Li, Xianhang

2007-08-01

The microstructure of zinc oxide thin films on silicon substrates grown by metalorganic chemical vapour deposition (MOCVD) was characterized. The cross-sectional bright-field transmission electron microscopy (TEM) image showed that small ZnO columnar grains were embedded into large columnar grains, and the selected-area electron diffraction pattern showed that the ZnO/Si thin films were nearly c-axis oriented. The deviation angle along the ZnO (0 0 0 1) direction with respect to the growth direction of Si (1 0 0) was no more than 5°. The [0 0 0 1]-tilt grain boundaries in ZnO/Si thin films were investigated symmetrically by plan-view high resolution TEM. The boundaries can be classified into three types: low-angle boundaries described as an irregular array of edge dislocations, boundaries of near 30° angle with (1\\,0\\,\\bar{1}\\,0) facet structures and large-angle boundaries with symmetric structure which could be explained by a low Σ coincident site lattice structure mode. The research was useful to us for finding optimized growth conditions to improve ZnO/Si thin film quality.

Electrical and optical performance of transparent conducting oxide films deposited by electrostatic spray assisted vapour deposition.

PubMed

Hou, Xianghui; Choy, Kwang-Leong; Liu, Jun-Peng

2011-09-01

Transparent conducting oxide (TCO) films have the remarkable combination of high electrical conductivity and optical transparency. There is always a strong motivation to produce TCO films with good performance at low cost. Electrostatic Spray Assisted Vapor Deposition (ESAVD), as a variant of chemical vapour deposition (CVD), is a non-vacuum and low-cost deposition method. Several types of TCO films have been deposited using ESAVD process, including indium tin oxide (ITO), antimony-doped tin oxide (ATO), and fluorine doped tin oxide (FTO). This paper reports the electrical and optical properties of TCO films produced by ESAVD methods, as well as the effects of post treatment by plasma hydrogenation on these TCO films. The possible mechanisms involved during plasma hydrogenation of TCO films are also discussed. Reduction and etching effect during plasma hydrogenation are the most important factors which determine the optical and electrical performance of TCO films.

Influence of Natural Convection and Thermal Radiation Multi-Component Transport in MOCVD Reactors

NASA Technical Reports Server (NTRS)

Lowry, S.; Krishnan, A.; Clark, I.

1999-01-01

The influence of Grashof and Reynolds number in Metal Organic Chemical Vapor (MOCVD) reactors is being investigated under a combined empirical/numerical study. As part of that research, the deposition of Indium Phosphide in an MOCVD reactor is modeled using the computational code CFD-ACE. The model includes the effects of convection, conduction, and radiation as well as multi-component diffusion and multi-step surface/gas phase chemistry. The results of the prediction are compared with experimental data for a commercial reactor and analyzed with respect to the model accuracy.

Controllable growth of shaped graphene domains by atmospheric pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Fan, Lili; Li, Zhen; Li, Xiao; Wang, Kunlin; Zhong, Minlin; Wei, Jinquan; Wu, Dehai; Zhu, Hongwei

2011-12-01

Graphene domains in different shapes have been grown on copper substrates via atmospheric pressure chemical vapour deposition by controlling the growth process parameters. Under stabilized conditions, graphene domains tend to be six-fold symmetric hexagons under low flow rate methane with some domains in an irregular hexagonal shape. After further varying the growth duration, methane flow rate, and temperature, graphene domains have developed shapes from hexagon to shovel and dendrite. Two connecting modes, through overlap and merging of adjacent graphene domains, are proposed.Graphene domains in different shapes have been grown on copper substrates via atmospheric pressure chemical vapour deposition by controlling the growth process parameters. Under stabilized conditions, graphene domains tend to be six-fold symmetric hexagons under low flow rate methane with some domains in an irregular hexagonal shape. After further varying the growth duration, methane flow rate, and temperature, graphene domains have developed shapes from hexagon to shovel and dendrite. Two connecting modes, through overlap and merging of adjacent graphene domains, are proposed. Electronic supplementary information (ESI) available: Schematics of CVD setups for graphene growth, Raman spectra and SEM images. See DOI: 10.1039/c1nr11480h

Vapour-Deposited Cesium Lead Iodide Perovskites: Microsecond Charge Carrier Lifetimes and Enhanced Photovoltaic Performance

PubMed Central

2017-01-01

Metal halide perovskites such as methylammonium lead iodide (MAPbI3) are highly promising materials for photovoltaics. However, the relationship between the organic nature of the cation and the optoelectronic quality remains debated. In this work, we investigate the optoelectronic properties of fully inorganic vapour-deposited and spin-coated black-phase CsPbI3 thin films. Using the time-resolved microwave conductivity technique, we measure charge carrier mobilities up to 25 cm2/(V s) and impressively long charge carrier lifetimes exceeding 10 μs for vapour-deposited CsPbI3, while the carrier lifetime reaches less than 0.2 μs in the spin-coated samples. Finally, we show that these improved lifetimes result in enhanced device performance with power conversion efficiencies close to 9%. Altogether, these results suggest that the charge carrier mobility and recombination lifetime are mainly dictated by the inorganic framework rather than the organic nature of the cation. PMID:28852710

Fabrication of 100 A class, 1 m long coated conductor tapes by metal organic chemical vapor deposition and pulsed laser deposition

NASA Astrophysics Data System (ADS)

Selvamanickam, V.; Lee, H. G.; Li, Y.; Xiong, X.; Qiao, Y.; Reeves, J.; Xie, Y.; Knoll, A.; Lenseth, K.

2003-10-01

SuperPower has been scaling up YBa 2Cu 3O x-based second-generation superconducting tapes by techniques such as pulsed laser deposition (PLD) using industrial laser and metal organic chemical vapor deposition (MOCVD). Both techniques offer advantage of high deposition rates, which is important for high throughput. Using highly-polished substrates produced in a reel-to-reel polishing facility and buffer layers deposited in a pilot ion beam assisted deposition facility, meter-long second-generation high temperature superconductor tapes have been produced. 100 A class, meter-long coated conductor tapes have been reproducibly demonstrated in this work by both MOCVD and PLD. The best results to date are 148 A over 1.06 m by MOCVD and 135 A over 1.1 m by PLD using industrial laser.

Chemical vapour deposition growth and Raman characterization of graphene layers and carbon nanotubes

NASA Astrophysics Data System (ADS)

Lai, Y.-C.; Rafailov, P. M.; Vlaikova, E.; Marinova, V.; Lin, S. H.; Yu, P.; Yu, S.-C.; Chi, G. C.; Dimitrov, D.; Sveshtarov, P.; Mehandjiev, V.; Gospodinov, M. M.

2016-02-01

Single-layer graphene films were grown by chemical vapour deposition (CVD) on Cu foil. The CVD process was complemented by plasma enhancement to grow also vertically aligned multiwalled carbon nanotubes using Ni nanoparticles as catalyst. The obtained samples were characterized by Raman spectroscopy analysis. Nature of defects in the samples and optimal growth conditions leading to achieve high quality of graphene and carbon nanotubes are discussed.

Suppression of Mg propagation into subsequent layers grown by MOCVD

NASA Astrophysics Data System (ADS)

Agarwal, Anchal; Tahhan, Maher; Mates, Tom; Keller, Stacia; Mishra, Umesh

2017-01-01

Low temperature (LT) flow modulation epitaxy (FME) or "pulsed" growth was successfully used to prevent magnesium from Metalorganic Chemical Vapor Deposition (MOCVD) grown p-GaN:Mg layers riding into subsequently deposited n-type layers. Mg concentration in the subsequent layers was lowered from ˜1 × 1018 cm-3 for a medium temperature growth at 950 °C to ˜1 × 1016 cm-3 for a low temperature growth at 700 °C via FME. The slope of the Mg concentration drop in the 700 °C FME sample was 20 nm/dec—the lowest ever demonstrated by MOCVD. For growth on Mg implanted GaN layers, the drop for a medium temperature regrowth at 950 °C was ˜10 nm/dec compared to >120 nm/dec for a high temperature regrowth at 1150 °C. This drop-rate obtained at 950 °C or lower was maintained even when the growth temperature in the following layers was raised to 1150 °C. A controlled silicon doping series using LT FME was also demonstrated with the lowest and highest achieved doping levels being 5 × 1016 cm-3 and 6 × 1019 cm-3, respectively.

Micromachining of silicon carbide on silicon fabricated by low-pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Behrens, Ingo; Peiner, Erwin; Bakin, Andrey S.; Schlachetzki, Andreas

2002-07-01

We describe the fabrication of silicon carbide layers for micromechanical applications using low-pressure metal-organic chemical vapour deposition at temperatures below 1000 °C. The layers can be structured by lift-off using silicon dioxide as a sacrificial layer. A large selectivity with respect to silicon can be exploited for bulk micromachining. Thin membranes are fabricated which exhibit high mechanical quality, as necessary for applications in harsh environments.

Optical Refrigeration

DTIC Science & Technology

2007-12-01

confined to either glasses and crystals doped with rare-earth (RE) elements or direct-bandgap semiconductors such as gallium arsenide. Although laser...condition. Highly controlled epitaxial growth techniques, such as metal–organic chemical vapour deposition (MOCVD) can produce very low surface

Radiation effects on p+n InP junctions grown by MOCVD

NASA Technical Reports Server (NTRS)

Messenger, Scott R.; Walters, Robert J.; Panunto, M. J.; Summers, Geoffrey P.

1994-01-01

The superior radiation resistance of InP over other solar cell materials such as Si or GaAs has prompted the development of InP cells for space applications. The early research on radiation effects in InP was performed by Yamaguchi and co-workers who showed that, in diffused p-InP junctions, radiation-induced defects were readily annealed both thermally and by injection, which was accompanied by significant cell recovery. More recent research efforts have been made using p-InP grown by metalorganic chemical vapor deposition (MOCVD). While similar deep level transient spectroscopy (DLTS) results were found for radiation induced defects in these cells and in diffused junctions, significant differences existed in the annealing characteristics. After injection annealing at room temperature, Yamaguchi noticed an almost complete recovery of the photovoltaic parameters, while the MOCVD samples showed only minimal annealing. In searching for an explanation of the different annealing behavior of diffused junctions and those grown by MOCVD, several possibilities have been considered. One possibility is the difference in the emitter structure. The diffused junctions have S-doped graded emitters with widths of approximately 0.3 micrometers, while the MOCVD emitters are often doped with Si and have widths of approximately 300A (0.03 micrometers). The difference in the emitter thickness can have important effects, e.g. a larger fraction of the total photocurrent is generated in the n-type material for thicker emitters. Therefore the properties of the n-InP material may explain the difference in the observed overall annealing behavior of the cells.

Friction and wear behavior of nitrogen-doped ZnO thin films deposited via MOCVD under dry contact

DOE PAGES

Mbamara, U. S.; Olofinjana, B.; Ajayi, O. O.; ...

2016-02-01

Most researches on doped ZnO thin films are tilted toward their applications in optoelectronics and semiconductor devices. Research on their tribological properties is still unfolding. In this work, nitrogen-doped ZnO thin films were deposited on 304 L stainless steel substrate from a combination of zinc acetate and ammonium acetate precursor by MOCVD technique. Compositional and structural studies of the films were done using Rutherford Backscattering Spectroscopy (RBS) and X-ray Diffraction (XRD). The frictional behavior of the thin film coatings was evaluated using a ball-on-flat configuration in reciprocating sliding under dry contact condition. After friction test, the flat and ball counter-facemore » surfaces were examined to assess the wear dimension and failure mechanism. In conclusion, both friction behavior and wear (in the ball counter-face) were observed to be dependent on the crystallinity and thickness of the thin film coatings.« less

Defect characterization of MOCVD grown AlN/AlGaN films on sapphire substrates by TEM and TKD

NASA Astrophysics Data System (ADS)

O'Connell, J. H.; Lee, M. E.; Westraadt, J.; Engelbrecht, J. A. A.

2018-04-01

High resolution transmission electron microscopy (TEM) has been used to characterize defects structures in AlN/AlGaN epilayers grown by metal-organic chemical vapour deposition (MOCVD) on c-plane sapphire (Al2O3) substrates. The AlN buffer layer was shown to be epitaxially grown on the sapphire substrate with the two lattices rotated relatively through 30°. The AlN layer had a measured thickness of 20-30 nm and was also shown to contain nano-sized voids. The misfit dislocations in the buffer layer have been shown to be pure edge with a spacing of 1.5 nm. TEM characterization of the AlGaN epilayers was shown to contain a higher than expected threading dislocation density of the order 1010 cm-2 as well as the existence of "nanopipes". TEM analysis of the planar lamella for AlGaN has presented evidence for the possibility of columnar growth. The strain and misorientation mapping in the AlGaN epilayer by transmission Kikuchi diffraction (TKD) using the FIB lamella has also been demonstrated to be complimentary to data obtained by TEM imaging.

Ge-rich islands grown on patterned Si substrates by low-energy plasma-enhanced chemical vapour deposition.

PubMed

Bollani, M; Chrastina, D; Fedorov, A; Sordan, R; Picco, A; Bonera, E

2010-11-26

Si(1-x)Ge(x) islands grown on Si patterned substrates have received considerable attention during the last decade for potential applications in microelectronics and optoelectronics. In this work we propose a new methodology to grow Ge-rich islands using a chemical vapour deposition technique. Electron-beam lithography is used to pre-pattern Si substrates, creating material traps. Epitaxial deposition of thin Ge films by low-energy plasma-enhanced chemical vapour deposition then leads to the formation of Ge-rich Si(1-x)Ge(x) islands (x > 0.8) with a homogeneous size distribution, precisely positioned with respect to the substrate pattern. The island morphology was characterized by atomic force microscopy, and the Ge content and strain in the islands was studied by μRaman spectroscopy. This characterization indicates a uniform distribution of islands with high Ge content and low strain: this suggests that the relatively high growth rate (0.1 nm s(-1)) and low temperature (650 °C) used is able to limit Si intermixing, while maintaining a long enough adatom diffusion length to prevent nucleation of islands outside pits. This offers the novel possibility of using these Ge-rich islands to induce strain in a Si cap.

MOCVD growth of vertically aligned InGaN nanowires

NASA Astrophysics Data System (ADS)

Kuo, H. C.; Su Oh, Tae; Ku, P.-C.

2013-05-01

In this work, we report the growth of vertically aligned bulk InGaN nanowires (NWs) on r-plane sapphire substrate by metal organic chemical vapor deposition (MOCVD). Through the optimization process of growth conditions, such as growth temperature and pressure, we obtained high density InGaN NWs consisting of one (0001) polar- and two equivalent {1101} semi-polar planes. We have shown the highest InGaN NWs wire density of 8×108 cm-2,with an average diameter of 300 nm and a length of 2 μm. From results of photoluminescence (PL) at 30 K and 300 K, we observed the intense and broad emission peak from InGaN NWs at around 595 nm, and confirmed that the luminescence could be tuned from 580 nm to 660 nm by controlling the indium flow (TMIn) rate. Our results indicate that MOCVD-grown InGaN NWs can be effective absorbers of the blue-green range of solar spectrum and may be one of the good candidates for high efficiency photovoltaic devices targeting at blue-green photons.

Vacuum MOCVD fabrication of high efficience cells

NASA Technical Reports Server (NTRS)

Partain, L. D.; Fraas, L. M.; Mcleod, P. S.; Cape, J. A.

1985-01-01

Vacuum metal-organic-chemical-vapor-deposition (MOCVD) is a new fabrication process with improved safety and easier scalability due to its metal rather than glass construction and its uniform multiport gas injection system. It uses source materials more efficiently than other methods because the vacuum molecular flow conditions allow the high sticking coefficient reactants to reach the substrates as undeflected molecular beams and the hot chamber walls cause the low sticking coefficient reactants to bounce off the walls and interact with the substrates many times. This high source utilization reduces the materials costs power device and substantially decreases the amounts of toxic materials that must be handled as process effluents. The molecular beams allow precise growth control. With improved source purifications, vacuum MOCVD has provided p GaAs layers with 10-micron minority carrier diffusion lengths and GaAs and GaAsSb solar cells with 20% AMO efficiencies at 59X and 99X sunlight concentration ratios. Mechanical stacking has been identified as the quickest, most direct and logical path to stacked multiple-junction solar cells that perform better than the best single-junction devices. The mechanical stack is configured for immediate use in solar arrays and allows interconnections that improve the system end-of-life performance in space.

Photoreflectance for in-situ characterization of MOCVD growth of semiconductors under micro-gravity conditions

NASA Technical Reports Server (NTRS)

Pollak, Fred H.

1990-01-01

A contactless electromodulation technique of photoreflectance (PR) was developed for in-situ monitoring of metal-organic chemical vapor deposition (MOCVD) semiconductor growth for micro-gravity applications. PR can be employed in a real MOCVD reactor including rotating substrate (approximately 500 rev/min) in flowing gases and through a diffuser plate. Measurements on GaAs and Ga(0.82)Al(0.18)As were made up to 690 C. The direct band gaps of In(x)Ga(1-x)As (x = 0.07 and 0.16) were evaluated up to 600 C. In order to address the question of real time measurement, the spectra of the direct gap of GaAs at 650 C was obtained in 30 seconds and 15 seconds seems feasible.

CO 2-fluxing collapses metal mobility in magmatic vapour

DOE PAGES

van Hinsberg, V. J.; Berlo, K.; Migdisov, A. A.; ...

2016-05-18

Magmatic systems host many types of ore deposits, including world-class deposits of copper and gold. Magmas are commonly an important source of metals and ore-forming fluids in these systems. In many magmatic-hydrothermal systems, low-density aqueous fluids, or vapours, are significant metal carriers. Such vapours are water-dominated shallowly, but fluxing of CO 2-rich vapour exsolved from deeper magma is now recognised as ubiquitous during open-system magma degassing. Furthermore, we show that such CO 2-fluxing leads to a sharp drop in element solubility, up to a factor of 10,000 for Cu, and thereby provides a highly efficient, but as yet unrecognised mechanismmore » for metal deposition.« less

A simple, space constrained NIRIM type reactor for chemical vapour deposition of diamond

NASA Astrophysics Data System (ADS)

Thomas, Evan L. H.; Ginés, Laia; Mandal, Soumen; Klemencic, Georgina M.; Williams, Oliver A.

2018-03-01

In this paper the design of a simple, space constrained chemical vapour deposition reactor for diamond growth is detailed. Based on the design by NIRIM, the reactor is composed of a quartz discharge tube placed within a 2.45 GHz waveguide to create the conditions required for metastable growth of diamond. Utilising largely off-the-shelf components and a modular design, the reactor allows for easy modification, repair, and cleaning between growth runs. The elements of the reactor design are laid out with the CAD files, parts list, and control files made easily available to enable replication. Finally, the quality of nanocrystalline diamond films produced are studied with SEM and Raman spectroscopy, with the observation of clear faceting and a large diamond fraction suggesting the design offers deposition of diamond with minimal complexity.

Process in manufacturing high efficiency AlGaAs/GaAs solar cells by MO-CVD

NASA Technical Reports Server (NTRS)

Yeh, Y. C. M.; Chang, K. I.; Tandon, J.

1984-01-01

Manufacturing technology for mass producing high efficiency GaAs solar cells is discussed. A progress using a high throughput MO-CVD reactor to produce high efficiency GaAs solar cells is discussed. Thickness and doping concentration uniformity of metal oxide chemical vapor deposition (MO-CVD) GaAs and AlGaAs layer growth are discussed. In addition, new tooling designs are given which increase the throughput of solar cell processing. To date, 2cm x 2cm AlGaAs/GaAs solar cells with efficiency up to 16.5% were produced. In order to meet throughput goals for mass producing GaAs solar cells, a large MO-CVD system (Cambridge Instrument Model MR-200) with a susceptor which was initially capable of processing 20 wafers (up to 75 mm diameter) during a single growth run was installed. In the MR-200, the sequencing of the gases and the heating power are controlled by a microprocessor-based programmable control console. Hence, operator errors can be reduced, leading to a more reproducible production sequence.

Sub-10-nm patterning via directed self-assembly of block copolymer films with a vapour-phase deposited topcoat

DOE Office of Scientific and Technical Information (OSTI.GOV)

Suh, Hyo Seon; Kim, Do Han; Moni, Priya

2017-03-27

Directed self-assembly (DSA) of the domain structure in block copolymer (BCP) thin films is a promising approach for sub-10-nm surface patterning. DSA requires the control of interfacial properties on both interfaces of a BCP film to induce the formation of domains that traverse the entire film with a perpendicular orientation. Here we show a methodology to control the interfacial properties of BCP films that uses a polymer topcoat deposited by initiated chemical vapour deposition (iCVD). The iCVD topcoat forms a crosslinked network that grafts to and immobilizes BCP chains to create an interface that is equally attractive to both blocksmore » of the underlying copolymer. The topcoat, in conjunction with a chemically patterned substrate, directs the assembly of the grating structures in BCP films with a half-pitch dimension of 9.3 nm. As the iCVD topcoat can be as thin as 7 nm, it is amenable to pattern transfer without removal. As a result, the ease of vapour-phase deposition, applicability to high-resolution BCP systems and integration with pattern-transfer schemes are attractive properties of iCVD topcoats for industrial applications.« less

Long distance spin communication in chemical vapour deposited graphene

NASA Astrophysics Data System (ADS)

Kamalakar, M. Venkata; Groenveld, Christiaan; Dankert, André; Dash, Saroj P.

2015-04-01

Graphene is an ideal medium for long-distance spin communication in future spintronic technologies. So far, the prospect is limited by the smaller sizes of exfoliated graphene flakes and lower spin transport properties of large-area chemical vapour-deposited (CVD) graphene. Here we demonstrate a high spintronic performance in CVD graphene on SiO2/Si substrate at room temperature. We show pure spin transport and precession over long channel lengths extending up to 16 μm with a spin lifetime of 1.2 ns and a spin diffusion length ~6 μm at room temperature. These spin parameters are up to six times higher than previous reports and highest at room temperature for any form of pristine graphene on industrial standard SiO2/Si substrates. Our detailed investigation reinforces the observed performance in CVD graphene over wafer scale and opens up new prospects for the development of lateral spin-based memory and logic applications.

Temperature coefficients and radiation induced DLTS spectra of MOCVD grown n(+)p InP solar cells

NASA Technical Reports Server (NTRS)

Walters, Robert J.; Statler, Richard L.; Summers, Geoffrey P.

1991-01-01

The effects of temperature and radiation on n(+)p InP solar cells and mesa diodes grown by metallorganic chemical vapor deposition (MOCVD) were studied. It was shown that MOCVD is capable of consistently producing good quality InP solar cells with Eff greater than 19 percent which display excellent radiation resistance due to minority carrier injection and thermal annealing. It was also shown that universal predictions of InP device performance based on measurements of a small group of test samples can be expected to be quite accurate, and that the degradation of an InP device due to any incident particle spectrum should be predictable from a measurement following a single low energy proton irradiation.

Epitaxial Ge Solar Cells Directly Grown on Si (001) by MOCVD Using Isobutylgermane

NASA Astrophysics Data System (ADS)

Kim, Youngjo; Kim, Kangho; Lee, Jaejin; Kim, Chang Zoo; Kang, Ho Kwan; Park, Won-Kyu

2018-03-01

Epitaxial Ge layers have been grown on Si (001) substrates by metalorganic chemical vapor deposition (MOCVD) using an isobutylgermane (IBuGe) metalorganic source. Low and high temperature two-step growth and post annealing techniques are employed to overcome the lattice mismatch problem between Ge and Si. It is demonstrated that high quality Ge epitaxial layers can be grown on Si (001) by using IBuGe with surface RMS roughness of 2 nm and an estimated threading dislocation density of 4.9 × 107 cm -2. Furthermore, single-junction Ge solar cells have been directly grown on Si substrates with an in situ MOCVD growth. The epitaxial Ge p- n junction structures are investigated with transmission electron microscopy and electrochemical C- V measurements. As a result, a power conversion efficiency of 1.69% was achieved for the Ge solar cell directly grown on Si substrate under AM1.5G condition.

Combining single source chemical vapour deposition precursors to explore the phase space of titanium oxynitride thin films.

PubMed

Rees, Kelly; Lorusso, Emanuela; Cosham, Samuel D; Kulak, Alexander N; Hyett, Geoffrey

2018-02-14

In this paper we report on a novel chemical vapour deposition approach to the formation and control of composition of mixed anion materials, as applied to titanium oxynitride thin films. The method used is the aerosol assisted chemical vapour deposition (AACVD) of a mixture of single source precursors. To explore the titanium-oxygen-nitrogen system the single source precursors selected were tetrakis(dimethylamido) titanium and titanium tetraisopropoxide which individually are precursors to thin films of titanium nitride and titanium dioxide respectively. However, by combining these precursors in specific ratios in a series of AACVD reactions at 400 °C, we are able to deposit thin films of titanium oxynitride with three different structure types and a wide range of compositions. Using this precursor system we can observe films of nitrogen doped anatase, with 25% anion doping of nitrogen; a new composition of pseudobrookite titanium oxynitride with a composition of Ti 3 O 3.5 N 1.5 , identified as being a UV photocatalyst; and rock-salt titanium oxynitride in the range TiO 0.41 N 0.59 to TiO 0.05 N 0.95 . The films were characterised using GIXRD, WDX and UV-vis spectroscopy, and in the case of the pseudobrookite films, assessed for photocatalytic activity. This work shows that a so-called dual single-source CVD approach is an effective method for the deposition of ternary mixed anion ceramic films through simple control of the ratio of the precursors, while keeping all other experimental parameters constant.

Tungsten Deposition on Graphite using Plasma Enhanced Chemical Vapour Deposition.

NASA Astrophysics Data System (ADS)

Sharma, Uttam; Chauhan, Sachin S.; Sharma, Jayshree; Sanyasi, A. K.; Ghosh, J.; Choudhary, K. K.; Ghosh, S. K.

2016-10-01

The tokamak concept is the frontrunner for achieving controlled thermonuclear reaction on earth, an environment friendly way to solve future energy crisis. Although much progress has been made in controlling the heated fusion plasmas (temperature ∼ 150 million degrees) in tokamaks, technological issues related to plasma wall interaction topic still need focused attention. In future, reactor grade tokamak operational scenarios, the reactor wall and target plates are expected to experience a heat load of 10 MW/m2 and even more during the unfortunate events of ELM's and disruptions. Tungsten remains a suitable choice for the wall and target plates. It can withstand high temperatures, its ductile to brittle temperature is fairly low and it has low sputtering yield and low fuel retention capabilities. However, it is difficult to machine tungsten and hence usages of tungsten coated surfaces are mostly desirable. To produce tungsten coated graphite tiles for the above-mentioned purpose, a coating reactor has been designed, developed and made operational at the SVITS, Indore. Tungsten coating on graphite has been attempted and successfully carried out by using radio frequency induced plasma enhanced chemical vapour deposition (rf -PECVD) for the first time in India. Tungsten hexa-fluoride has been used as a pre-cursor gas. Energy Dispersive X-ray spectroscopy (EDS) clearly showed the presence of tungsten coating on the graphite samples. This paper presents the details of successful operation and achievement of tungsten coating in the reactor at SVITS.

Multilayer porous structures of HVPE and MOCVD grown GaN for photonic applications

NASA Astrophysics Data System (ADS)

Braniste, T.; Ciers, Joachim; Monaico, Ed.; Martin, D.; Carlin, J.-F.; Ursaki, V. V.; Sergentu, V. V.; Tiginyanu, I. M.; Grandjean, N.

2017-02-01

In this paper we report on a comparative study of electrochemical processes for the preparation of multilayer porous structures in hydride vapor phase epitaxy (HVPE) and metal organic chemical vapor phase deposition (MOCVD) grown GaN. It was found that in HVPE-grown GaN, multilayer porous structures are obtained due to self-organization processes leading to a fine modulation of doping during the crystal growth. However, these processes are not totally under control. Multilayer porous structures with a controlled design have been produced by optimizing the technological process of electrochemical etching in MOCVD-grown samples, consisting of five pairs of thin layers with alternating-doping profiles. The samples have been characterized by SEM imaging, photoluminescence spectroscopy, and micro-reflectivity measurements, accompanied by transfer matrix analysis and simulations by a method developed for the calculation of optical reflection spectra. We demonstrate the applicability of the produced structures for the design of Bragg reflectors.

Chemical vapor deposition of Mo thin films from Mo(CO){sub 6}

DOE Office of Scientific and Technical Information (OSTI.GOV)

Sharma, P.; Bond, J.; Westmore, T.

1995-12-01

Low levels of carbon and/or oxygen contamination in metallic thin films significantly alter the physical and chemical properties of these films often rendering them useless for any commercial applications. These impurities are often observed in films grown by a technique called metallorganic chemical vapor deposition (MOCVD). MOCVD films are grown by heating a substrate in the presence of a metallorganic precursor. We wish to identify the source(s) of contamination in films produced from the Group VIB metal hexacarbonyls, M(CO){sub 6}. Towards attaining this goal we have initiated studies on the elemental composition of thin films deposited by MOCVD using Mo(CO){submore » 6} as the precursor. The results obtained so far indicate that the level of contamination of the films partially depends on the deposition temperature. Our results will be compared to published work on films deposited by laser assisted CVD from Mo(CO){sub 6}.« less

Vapour phase techniques for deposition of CZTS thin films: A review

NASA Astrophysics Data System (ADS)

Kaur, Ramanpreet; Kumar, Sandeep; Singh, Sukhpal

2018-05-01

With the surge of thin film photovoltaic technologies in recent years, for cost reduction and increased production there is a need for earth abundant and non-toxic raw materials. Existing thin film solar cells comprising CuInS2 (CIS), CuInGaSe2 (CIGS) and CdTe contain elements that are rare in earth's crust and in case of CdTe toxic. Cu2ZnSnS4 (CZTS), having Kesterite structure, a direct band gap of 1.4 - 1.5 eV and an absorption coefficient of 104 cm-1 makes a promising candidate for absorber layer in thin film solar cells. So far many physical and chemical techniques have been employed for deposition of CZTS thin films. This review focuses on various vapour phase techniques used for fabrication of films, recent advances in these techniques and their future outlook.

Crystalline gamma-Al2O3 physical vapour deposition-coating for steel thixoforging tools.

PubMed

Bobzin, K; Hirt, G; Bagcivan, N; Khizhnyakova, L; Ewering, M

2011-10-01

The process of thixoforming, which has been part of many researches during the last decades, combines the advantages of forging and casting for the shaping of metallic components. But due to the high temperatures of semi-solid steel alloys high demands on the tools are requested. To resists the thermal and mechanical loads (wear, friction, thermal and thermomechanical fatigue) protecting thin films are necessary. In this regard crystalline gamma-Al2O3 deposited via Physical Vapour Deposition (PVD) is a promising candidate: It exhibits high thermal stability, high oxidation resistance and high hot hardness. In the present work the application of a (Ti, Al)N/gamma-Al2O3 coating deposited by means of Magnetron Sputter Ion Plating in an industrial coating unit is presented. The coating was analysed by means of Rockwell test, nanoindentation, and Scanning Electron Microscopy (SEM). The coated tool was tested in thixoforging experiments with steel grade X210CrW12 (AlSI D6). The surface of the coated dies was examined with Scanning Electron Microscope (SEM) after 22, 42, 90 and 170 forging cycles.

Improved luminescence properties of MoS2 monolayers grown via MOCVD: role of pre-treatment and growth parameters

NASA Astrophysics Data System (ADS)

Andrzejewski, D.; Marx, M.; Grundmann, A.; Pfingsten, O.; Kalisch, H.; Vescan, A.; Heuken, M.; Kümmell, T.; Bacher, G.

2018-07-01

Fabrication of transition metal dichalcogenides (TMDCs) via metalorganic chemical vapor deposition (MOCVD) represents one of the most attractive routes to large-scale 2D material layers. Although good homogeneity and electrical conductance have been reported recently, the relation between growth parameters and photoluminescence (PL) intensity—one of the most important parameters for optoelectronic applications—has not yet been discussed for MOCVD TMDCs. In this work, MoS2 is grown via MOCVD on sapphire (0001) substrates using molybdenum hexacarbonyl (Mo(CO)6, MCO) and di-tert-butyl sulphide as precursor materials. A prebake step under H2 atmosphere combined with a reduced MCO precursor flow increases the crystal grain size by one order of magnitude and strongly enhances PL intensity with a clear correlation to the grain size. A decrease of the linewidth of both Raman resonances and PL spectra down to full width at half maxima of 3.2 cm‑1 for the E 2g Raman mode and 60 meV for the overall PL spectrum indicate a reduced defect density at optimized growth conditions.

All-MOCVD-grown BH laser on P-InP substrates

NASA Astrophysics Data System (ADS)

Nishimura, Tadashi; Ishimura, E.; Nakajima, Yasuo; Tada, Hitoshi; Kimura, T.; Ohkura, Y.; Goto, Katsuhiko; Omura, Etsuji; Aiga, Masao

1993-07-01

A very low cw threshold current of 2.5 mA ( 25 degree(s)C) and 8.0 mA ( 80 degree(s)C) with high reliability has been realized in the all-MOCVD grown BH lasers on p-InP substrates. A strained MQW active layer of 1.3 micrometers wavelength and the precise carrier confinement buried structure by MOCVD is employed for the BH lasers. The excellent potential of long lifetime of the all-MOCVD grown laser has also been confirmed. After the high temperature and the high current (100 degree(s)C, 200 mA) aging test, no significant degradation is observed which is comparable with the well-established LPE grown lasers. The BH laser is also operating stably over 3700 hrs under the APC condition of 50 degree(s)C, 10 mW. Finally, an extremely uniform 10-element all-MOCVD grown LD array is demonstrated, which has the threshold current uniformity of 2.4 +/- 0.1 mA ( 25 degree(s)C) and 9.2 +/- 0.2 mA ( 80 degree(s)C). The growth mechanism in the MOCVD is also described.

Photo Initiated Chemical Vapour Deposition To Increase Polymer Hydrophobicity

NASA Astrophysics Data System (ADS)

Bérard, Ariane; Patience, Gregory S.; Chouinard, Gérald; Tavares, Jason R.

2016-08-01

Apple growers face new challenges to produce organic apples and now many cover orchards with high-density polyethylene (HDPE) nets to exclude insects, rather than spraying insecticides. However, rainwater- associated wetness favours the development of apple scabs, Venturia inaequalis, whose lesions accumulate on the leaves and fruit causing unsightly spots. Treating the nets with a superhydrophobic coating should reduce the amount of water that passes through the net. Here we treat HDPE and polyethylene terephthalate using photo-initiated chemical vapour deposition (PICVD). We placed polymer samples in a quartz tube and passed a mixture of H2 and CO through it while a UVC lamp (254 nm) illuminated the surface. After the treatment, the contact angle between water droplets and the surface increased by an average of 20°. The contact angle of samples placed 70 cm from the entrance of the tube was higher than those at 45 cm and 20 cm. The PICVD-treated HDPE achieved a contact angle of 124°. Nets spray coated with a solvent-based commercial product achieved 180° but water ingress was, surprisingly, higher than that for nets with a lower contact angle.

Optimization of GaN thin films via MOCVD

NASA Technical Reports Server (NTRS)

Dickens, Corey; Wilson, Sylvia L.

1995-01-01

A unique characteristic of every semiconductor is the amount of energy required to break an electron bond in the lowest band of allowed states, the valence band. The energy necessary to set an electron free and allow it to conduct in the material is termed the energy gap (Eg). Semiconductors with wide bandgap energies have been shown to possess properties for high power, high temperature, radiation resistance damage, and short wavelength optoelectronic applications. Gallium nitride, which has a wide gap of 3.39 eV, is a material that has demonstrated these characteristics. Various growth conditions are being investigated for quality gallium nitride heteroepitaxy growth via the technique of low pressure metal organic chemical vapor deposition (MOCVD) that can be used for device development.

Three-dimensional modelling of horizontal chemical vapor deposition. I - MOCVD at atmospheric pressure

NASA Technical Reports Server (NTRS)

Ouazzani, Jalil; Rosenberger, Franz

1990-01-01

A systematic numerical study of the MOCVD of GaAs from trimethylgallium and arsine in hydrogen or nitrogen carrier gas at atmospheric pressure is reported. Three-dimensional effects are explored for CVD reactors with large and small cross-sectional aspect ratios, and the effects on growth rate uniformity of tilting the susceptor are investigated for various input flow rates. It is found that, for light carrier gases, thermal diffusion must be included in the model. Buoyancy-driven three-dimensional flow effects can greatly influence the growth rate distribution through the reactor. The importance of the proper design of the lateral thermal boundary conditions for obtaining layers of uniform thickness is emphasized.

MOCVD of aluminium oxide films using aluminium β-diketonates as precursors

NASA Astrophysics Data System (ADS)

Devi, A.; Shivashankar, S. A.; Samuelson, A. G.

2002-06-01

Deposition of Al203 coatings by CVD is of importance because they are often used as abrading material in cemented carbide cutting tools. The conventionally used CVD process for Al203 involves the corrosive reactant AICl3. In this paper, we report on the thermal characterisation of the metalorganic precursors namely aluminium tris-tetramethyl-heptanedionate [ Al(thd)3] and aluminium tris-acetylacetonate [ Al(acac)3] and their application to the CVD of Al203 films. Crystalline A1203 films were deposited by MOCVD at low temperatures by the pyrolysis of Al(thd)3 and AI(acac)3. The films were deposited on a TiN-coated tungsten carbide (TiN/WC) and Si(100) substrates in the temperature range 500-1100 °C. The as-deposited films were characterised by x-ray diffraction, optical microscopy, scanning and transmission electron microscopy, Auger electron spectroscopy. The observed crystallinity of films grown at low temperatures, their microstructure, and composition may be interpreted in terms of a growth process that involves the melting of the metalorganic precursor on the hot growth surface.

GaN epitaxial layers grown on multilayer graphene by MOCVD

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Gan, Lin; Xu, Bingshe

2018-04-01

In this study, GaN epitaxial layers were successfully deposited on a multilayer graphene (MLG) by using metal-organic chemical vapor deposition (MOCVD). Highly crystalline orientations of the GaN films were confirmed through electron backscatter diffraction (EBSD). An epitaxial relationship between GaN films and MLG is unambiguously established by transmission electron microscope (TEM) analysis. The Raman spectra was used to analyze the internal stress of GaN films, and the spectrum shows residual tensile stress in the GaN films. Moreover, the results of the TEM analysis and Raman spectra indicate that the high quality of the MLG substrate is maintained even after the growth of the GaN film. This high-quality MLG makes it possible to easily remove epitaxial layers from the supporting substrate by micro-mechanical exfoliation technology. This work can aid in the development of transferable devices using GaN films.

Growth of indium gallium arsenide thin film on silicon substrate by MOCVD technique

NASA Astrophysics Data System (ADS)

Chowdhury, Sisir; Das, Anish; Banerji, Pallab

2018-05-01

Indium gallium arsenide (InGaAs) thin film with indium phosphide (InP) buffer has been grown on p-type silicon (100) by Metal Organic Chemical Vapor Deposition (MOCVD) technique. To get a lattice matched substrate an Indium Phosphide buffer thin film is deposited onto Si substrate prior to InGaAs growth. The grown films have been investigated by UV-Vis-NIR reflectance spectroscopy. The band gap energy of the grown InGaAs thin films determined to be 0.82 eV from reflectance spectrum and the films are found to have same thickness for growth between 600 °C and 650 °C. Crystalline quality of the grown films has been studied by grazing incidence X-ray diffractometry (GIXRD).

Wetting behaviour of carbon nitride nanostructures grown by plasma enhanced chemical vapour deposition technique

NASA Astrophysics Data System (ADS)

Ahmad Kamal, Shafarina Azlinda; Ritikos, Richard; Abdul Rahman, Saadah

2015-02-01

Tuning the wettability of various coating materials by simply controlling the deposition parameters is essential for various specific applications. In this work, carbon nitride (CNx) films were deposited on silicon (1 1 1) substrates using radio-frequency plasma enhanced chemical vapour deposition employing parallel plate electrode configuration. Effects of varying the electrode distance (DE) on the films' structure and bonding properties were investigated using Field emission scanning electron microscopy, Atomic force microscopy, Fourier transform infrared and X-ray photoemission spectroscopy. The wettability of the films was analyzed using water contact angle measurements. At high DE, the CNx films' surface was smooth and uniform. This changed into fibrous nanostructures when DE was decreased. Surface roughness of the films increased with this morphological transformation. Nitrogen incorporation increased with decrease in DE which manifested the increase in both relative intensities of Cdbnd N to Cdbnd C and Nsbnd H to Osbnd H bonds. sp2-C to sp3-C ratio increased as DE decreased due to greater deformation of sp2 bonded carbon at lower DE. The films' characteristics changed from hydrophilic to super-hydrophobic with the decrease in DE. Roughness ratio, surface porosity and surface energy calculated from contact angle measurements were strongly dependent on the morphology, surface roughness and bonding properties of the films.

Fabrication of zinc-dicarboxylate- and zinc-pyrazolate-carboxylate-framework thin films through vapour-solid deposition.

PubMed

Medishetty, Raghavender; Zhang, Zongji; Sadlo, Alexander; Cwik, Stefan; Peeters, Daniel; Henke, Sebastian; Mangayarkarasi, Nagarathinam; Devi, Anjana

2018-05-17

Fabrication of three-dimensional metal-organic framework (MOF) thin films has been investigated for the first time through the conversion of a ZnO layer via a pure vapour-solid deposition reaction at ambient pressure. The fabrication of MOF thin films with a dicarboxylate linker, (DMA)2[Zn3(bdc)4] (1) (bdc = 1,4-benzenedicarboxylate), and a carboxy-pyrazolate linker, [Zn4O(dmcapz)6] (2) (dmcapz = 3,5-dimethyl-4-carboxypyrazole), involves the deposition of the linker and/or the preparation of a composite film preliminarily and its subsequent conversion into a MOF film using closed cell thermal treatment. Furthermore, it was possible to isolate thin films with a MOF-5 isotype structure grown along the [110] direction, using a carboxy-pyrazolate linker. This was achieved just by the direct reaction of the ZnO film and the organic linker vapors, employing a simple route that demonstrates the feasibility of MOF thin film fabrication using inexpensive routes at ambient pressure.

Growth of ZnO nanorods on stainless steel wire using chemical vapour deposition and their photocatalytic activity.

PubMed

Abd Aziz, Siti Nor Qurratu Aini; Pung, Swee-Yong; Ramli, Nurul Najiah; Lockman, Zainovia

2014-01-01

The photodegradation efficiency of ZnO nanoparticles in removal of organic pollutants deteriorates over time as a high percentage of the nanoparticles can be drained away by water during the wastewater treatment. This problem can be solved by growing the ZnO nanorods on stainless steel wire. In this work, ZnO nanorods were successfully grown on stainless steel wire by chemical vapour deposition. The SAED analysis indicates that ZnO nanorod is a single crystal and is preferentially grown in [0001] direction. The deconvoluted O 1s peak at 531.5 eV in XPS analysis is associated with oxygen deficient, revealing that the ZnO nanorods contain many oxygen vacancies. This observation is further supported by the finding of the small I(uv)/I(vis) ratio, that is, ~1 in the photoluminescence analysis. The growth of ZnO nanorods on stainless steel wire was governed by vapour-solid mechanism as there were no Fe particles observed at the tips of the nanorods. The photodegradation of Rhodamine B solution by ZnO nanorods followed the first-order kinetics.

Growth of ZnO Nanorods on Stainless Steel Wire Using Chemical Vapour Deposition and Their Photocatalytic Activity

PubMed Central

Abd Aziz, Siti Nor Qurratu Aini; Pung, Swee-Yong; Ramli, Nurul Najiah; Lockman, Zainovia

2014-01-01

The photodegradation efficiency of ZnO nanoparticles in removal of organic pollutants deteriorates over time as a high percentage of the nanoparticles can be drained away by water during the wastewater treatment. This problem can be solved by growing the ZnO nanorods on stainless steel wire. In this work, ZnO nanorods were successfully grown on stainless steel wire by chemical vapour deposition. The SAED analysis indicates that ZnO nanorod is a single crystal and is preferentially grown in [0001] direction. The deconvoluted O 1s peak at 531.5 eV in XPS analysis is associated with oxygen deficient, revealing that the ZnO nanorods contain many oxygen vacancies. This observation is further supported by the finding of the small I uv/I vis ratio, that is, ~1 in the photoluminescence analysis. The growth of ZnO nanorods on stainless steel wire was governed by vapour-solid mechanism as there were no Fe particles observed at the tips of the nanorods. The photodegradation of Rhodamine B solution by ZnO nanorods followed the first-order kinetics. PMID:24587716

Optical properties of hybrid quantum-well–dots nanostructures grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Kalyuzhnyy, N. A.; Nadtochiy, A. M.

The deposition of In{sub x}Ga{sub 1–x}As with an indium content of 0.3–0.5 and an average thickness of 3–27 single layers on a GaAs wafer by metalorganic chemical vapor deposition (MOCVD) at low temperatures results in the appearance of thickness and composition modulations in the layers being formed. Such structures can be considered to be intermediate nanostructures between ideal quantum wells and quantum dots. Depending on the average thickness and composition of the layers, the wavelength of the photoluminescence peak for the hybrid InGaAs quantum well–dots nanostructures varies from 950 to 1100 nm. The optimal average In{sub x}Ga{sub 1–x}As thicknesses andmore » compositions at which the emission wavelength is the longest with a high quantum efficiency retained are determined.« less

Growth mechanism of GaAs1-xSbx ternary alloy thin film on MOCVD reactor using TMGa, TDMAAs and TDMASb

NASA Astrophysics Data System (ADS)

Suhandi, A.; Tayubi, Y. R.; Arifin, P.

2016-04-01

Metal Organic Chemical Vapor Deposition (MOCVD) is a method for growing a solid material (in the form of thin films, especially for semiconductor materials) using vapor phase metal organic sources. Studies on the growth mechanism of GaAs1-xSbx ternary alloy thin solid film in the range of miscibility-gap using metal organic sources trimethylgallium (TMGa), trisdimethylaminoarsenic (TDMAAs), and trisdimethylaminoantimony (TDMASb) on MOCVD reactor has been done to understand the physical and chemical processes involved. Knowledge of the processes that occur during alloy formation is very important to determine the couple of growth condition and growth parameters are appropriate for yield high quality GaAs1-xSbx alloy. The mechanism has been studied include decomposition of metal organic sources and chemical reactions that may occur, the incorporation of the alloy elements forming and the contaminants element that are formed in the gown thin film. In this paper presented the results of experimental data on the growth of GaAs1-xSbx alloy using Vertical-MOCVD reactor to demonstrate its potential in growing GaAs1-xSbx alloy in the range of its miscibility gap.

High-quality nonpolar a-plane GaN epitaxial films grown on r-plane sapphire substrates by the combination of pulsed laser deposition and metal–organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yang, Weijia; Zhang, Zichen; Wang, Wenliang; Zheng, Yulin; Wang, Haiyan; Li, Guoqiang

2018-05-01

High-quality a-plane GaN epitaxial films have been grown on r-plane sapphire substrates by the combination of pulsed laser deposition (PLD) and metal–organic chemical vapor deposition (MOCVD). PLD is employed to epitaxial growth of a-plane GaN templates on r-plane sapphire substrates, and then MOCVD is used. The nonpolar a-plane GaN epitaxial films with relatively small thickness (2.9 µm) show high quality, with the full-width at half-maximum values of GaN(11\\bar{2}0) along [1\\bar{1}00] direction and GaN(10\\bar{1}1) of 0.11 and 0.30°, and a root-mean-square surface roughness of 1.7 nm. This result is equivalent to the quality of the films grown by MOCVD with a thickness of 10 µm. This work provides a new and effective approach for achieving high-quality nonpolar a-plane GaN epitaxial films on r-plane sapphire substrates.

Approaching the resolution limit of W-C nano-gaps using focused ion beam chemical vapour deposition

NASA Astrophysics Data System (ADS)

Dai, Jun; Chang, Hui; Maeda, Etsuo; Warisawa, Shin'ichi; Kometani, Reo

2018-01-01

Nano-gaps are fundamental building blocks for nanochannels, plasmonic nanostructures and superconducting Josephson junctions. We present a systematic study on the formation mechanism and resolution limit of W-C nano-gaps fabricated using focused-ion-beam chemical vapour deposition (FIB-CVD). First, the deposition size of the nanostructures is evaluated. The size averaged over 100 dots is 32 nm at FWHM. Line and space are also fabricated with the smallest size, having a spacing of only 5 nm at FWHM. Then, a model is developed to study the formation mechanism and provides the design basis for W-C nano-gaps. Both experimental and simulation results reveal that the shrinkage of W-C nano-gaps is accelerated as the Gaussian parts of the nano-wire profiles overlap. A Nano-gap with a length of 5 nm and height difference as high as 42 nm is synthesized. We believe that FIB-CVD opens avenues for novel functional nanodevices that can be potentially used for biosensing, photodetecting, or quantum computing.

Continuous flow chemical vapour deposition of carbon nanotube sea urchins.

PubMed

de La Verpilliere, Jean; Jessl, Sarah; Saeed, Khuzaimah; Ducati, Caterina; De Volder, Michael; Boies, Adam

2018-04-26

Hybrid structures consisting of functional materials enhanced by carbon nanotubes (CNTs) have potential for a variety of high impact applications, as shown by the impressive progress in sensing and mechanical applications enabled by CNT-enhanced materials. The hierarchical organisation of CNTs with other materials is key to the design of macroscale devices benefiting from the unique properties of individual CNTs, provided CNT density, morphology and binding with other materials are optimized. In this paper, we provide an analysis of a continuous aerosol process to create a hybrid hierarchical sea urchin structure with CNTs organized around a functional metal oxide core. We propose a new mechanism for the growth of these carbon nanotube sea urchins (CNTSU) and give new insight into their chemical composition. To corroborate the new mechanism, we examine the influence of CNT growth conditions on CNTSU morphology and demonstrate a new in-line characterisation technique to continuously monitor aerosol CNT growth during synthesis, which enables industrial-scale production optimization. Based upon the new formation mechanism we describe the first substrate-based chemical vapour deposition growth of CNTSUs which increases CNT length and improves G to D ratio, which also allows for the formation of CNTSU carpets with unique structures.

On The Stability Of Model Flows For Chemical Vapour Deposition

NASA Astrophysics Data System (ADS)

Miller, Robert

2016-11-01

The flow in a chemical vapour deposition (CVD) reactor is assessed. The reactor is modelled as a flow over an infinite-radius rotating disk, where the mean flow and convective instability of the disk boundary layer are measured. Temperature-dependent viscosity and enforced axial flow are used to model the steep temperature gradients present in CVD reactors and the pumping of the gas towards the disk, respectively. Increasing the temperature-dependence parameter of the fluid viscosity (ɛ) results in an overall narrowing of the fluid boundary layer. Increasing the axial flow strength parameter (Ts) accelerates the fluid both radially and axially, while also narrowing the thermal boundary layer. It is seen that when both effects are imposed, the effects of axial flow generally dominate those of the viscosity temperature dependence. A local stability analysis is performed and the linearized stability equations are solved using a Galerkin projection in terms of Chebyshev polynomials. The neutral stability curves are then plotted for a range of ɛ and Ts values. Preliminary results suggest that increasing Ts has a stabilising effect on both type I and type II stationary instabilities, while small increases in ɛ results in a significant reduction to the critical Reynolds number.

Trade-offs of the opto-electrical properties of a-Si:H solar cells based on MOCVD BZO films.

PubMed

Chen, Ze; Zhang, Xiao-dan; Liang, Jun-hui; Fang, Jia; Liang, Xue-jiao; Sun, Jian; Zhang, De-kun; Chen, Xin-liang; Huang, Qian; Zhao, Ying

2015-01-07

Boron-doped zinc oxide (BZO) films, deposited by metal-organic chemical vapor deposition (MOCVD), have been widely used as front electrodes in thin-film solar cells due to their native pyramidal surface structure, which results in efficient light trapping. This light trapping effect can enhance the short-circuit current density (Jsc) of solar cells. However, nanocracks or voids in the silicon active layer may form when the surface morphology of the BZO is too sharp; this usually leads to degraded electrical properties of the cells, such as open-circuit voltage (Voc) and the fill factor (FF), which in turn decreases efficiency (Eff) [Bailat et al., Photovoltaic Energy Conversion, Conference Record of the 2006 IEEE 4th World Conference on. IEEE, 2006, vol. 2, pp. 1533-1536]. In this paper, an etching and coating method was proposed to modify the sharp "pyramids" on the surface of the BZO films. As a result, an evident enhancement was achieved for these modified, BZO-based cells' Voc, FF, and Eff, although the Jsc exhibited a small decrease. In order to increase the Jsc and maintain the improved electrical properties (Voc, FF) of the cell, a thin BZO coating, deposited by MOCVD, was introduced to coat the sputtering-treated BZO film. Finally, we optimized the trade-off among the Voc, FF, and Jsc, that is, we identified a regime with an increase of the Jsc as well as a further improvement of the other electrical properties.

The Improvement of Utilization Ratio of Metal Organic Sources for the Low Cost Preparation of MOCVD-synthesized YBCO Films based on a Self-heating Technology

NASA Astrophysics Data System (ADS)

Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Tao, Bowan; Li, Yanrong

2017-12-01

We have successfully applied metal organic chemical vapor deposition (MOCVD) to synthesize biaxially textured YBa2Cu3O7-δ (YBCO) superconducting films on the templates of LaMnO3/epitaxial MgO/IBAD-MgO/solution deposition planarization (SDP) Y2O3/Hastelloy tape. The YBCO films have obtained dense and smooth surface with good structure and performance. A new self-heating method, which replaced the conventional heating-wire radiation heating method, has been used to heat the Hastelloy metal tapes by us. Compared with the heating-wire radiation heating method, the self-heating method shows higher energy efficiency and lower power consumption, which has good advantage to simplify the structure of the MOCVD system. Meanwhile, the utilization ratio of metal organic sources can be increased from 6% to 20% through adopting the new self-heating method. Then the preparation cost of the YBCO films can be also greatly reduced.

Heterocrystal and bicrystal structures of ZnS nanowires synthesized by plasma enhanced chemical vapour deposition

NASA Astrophysics Data System (ADS)

Jie, J. S.; Zhang, W. J.; Jiang, Y.; Meng, X. M.; Zapien, J. A.; Shao, M. W.; Lee, S. T.

2006-06-01

ZnS nanowires with heterocrystal and bicrystal structures were successfully synthesized using the DC-plasma chemical vapour deposition (CVD) method. The heterocrystalline ZnS nanowires have the zinc blende (ZB) and wurtzite (WZ) zones aligned alternately in the transverse direction but without an obvious period. The bicrystal ZnS nanowires are composed of two ZB fractions separated by a clear grain boundary along the length. Significantly, the grain boundaries in both the heterocrystal and bicrystal structures are atomically sharp without any visible lattice distortion. The effects of plasma species, ion bombardment, and silicon impurities in the formation of these distinctive structures are discussed. A defect-induced red-shift and broadening of the band-gap emission are revealed in photoluminescence (PL) and cathodoluminescence (CL) measurements.

Status of HgCdTe Barrier Infrared Detectors Grown by MOCVD in Military University of Technology

NASA Astrophysics Data System (ADS)

Kopytko, M.; Jóźwikowski, K.; Martyniuk, P.; Gawron, W.; Madejczyk, P.; Kowalewski, A.; Markowska, O.; Rogalski, A.; Rutkowski, J.

2016-09-01

In this paper we present the status of HgCdTe barrier detectors with an emphasis on technological progress in metalorganic chemical vapor deposition (MOCVD) growth achieved recently at the Institute of Applied Physics, Military University of Technology. It is shown that MOCVD technology is an excellent tool for HgCdTe barrier architecture growth with a wide range of composition, donor /acceptor doping, and without post-grown annealing. The device concept of a specific barrier bandgap architecture integrated with Auger-suppression is as a good solution for high-operating temperature infrared detectors. Analyzed devices show a high performance comparable with the state-of-the-art of HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07" and detectivities of non-immersed detectors are close to the value marked for HgCdTe photodiodes. Experimental data of long-wavelength infrared detector structures were confirmed by numerical simulations obtained by a commercially available software APSYS platform. A detailed analysis applied to explain dark current plots was made, taking into account Shockley-Read-Hall, Auger, and tunneling currents.

Substrate patterning with NiOx nanoparticles and hot-wire chemical vapour deposition of WO3x and carbon nanostructures

NASA Astrophysics Data System (ADS)

Houweling, Z. S.

2011-10-01

The first part of the thesis treats the formation of nickel catalyst nanoparticles. First, a patterning technique using colloids is employed to create ordered distributions of monodisperse nanoparticles. Second, nickel films are thermally dewetted, which produces mobile species that self-arrange in non-ordered distributions of polydisperse particles. Third, the mobility of the nickel species is successfully reduced by the addition of air during the dewetting and the use of a special anchoring layer. Thus, non-ordered distributions of self-arranged monodisperse nickel oxide nanoparticles (82±10 nm x 16±2 nm) are made. Studies on nickel thickness, dewetting time and dewetting temperature are conducted. With these particle templates, graphitic carbon nanotubes are synthesised using catalytic hot-wire chemical vapour deposition (HWCVD), demonstrating the high-temperature processability of the nanoparticles. The second part of this thesis treats the non-catalytic HWCVD of tungsten oxides (WO3-x). Resistively heated tungsten filaments exposed to an air flow at subatmospheric pressures, produce tungsten oxide vapour species, which are collected on substrates and are subsequently characterised. First, a complete study on the process conditions is conducted, whereby the effects of filament radiation, filament temperature, process gas pressure and substrate temperature, are investigated. The thus controlled growth of nanogranular smooth amorphous and crystalline WO3-x thin films is presented for the first time. Partially crystalline smooth hydrous WO3-x thin films consisting of 20 nm grains can be deposited at very high rates. The synthesis of ultrafine powders with particle sizes of about 7 nm and very high specific surface areas of 121.7±0.4 m2·g-1 at ultrahigh deposition rates of 36 µm·min-1, is presented. Using substrate heating to 600°C or more, while using air pressures of 3·10-5 mbar to 0.1 mbar, leads to pronounced crystal structures, from nanowires, to

Characterization of doped hydrogenated nanocrystalline silicon films prepared by plasma enhanced chemical vapour deposition

NASA Astrophysics Data System (ADS)

Wang, Jin-Liang; Wu, Er-Xing

2007-03-01

The B- and P-doped hydrogenated nanocrystalline silicon films (nc-Si:H) are prepared by plasma-enhanced chemical vapour deposition (PECVD). The microstructures of doped nc-Si:H films are carefully and systematically characterized by using high resolution electron microscopy (HREM), Raman scattering, x-ray diffraction (XRD), Auger electron spectroscopy (AES), and resonant nucleus reaction (RNR). The results show that as the doping concentration of PH3 increases, the average grain size (d) tends to decrease and the crystalline volume percentage (Xc) increases simultaneously. For the B-doped samples, as the doping concentration of B2H6 increases, no obvious change in the value of d is observed, but the value of Xc is found to decrease. This is especially apparent in the case of heavy B2H6 doped samples, where the films change from nanocrystalline to amorphous.

Micropatterning of TiO2 thin films by MOCVD and study of their growth tendency.

PubMed

Hwang, Ki-Hwan; Kang, Byung-Chang; Jung, Duk Young; Kim, Youn Jea; Boo, Jin-Hyo

2015-03-23

In this work, we studied the growth tendency of TiO2 thin films deposited on a narrow-stripe area (<10 μm). TiO2 thin films were selectively deposited on OTS patterned Si(100) substrates by MOCVD. The experimental data showed that the film growth tendency was divided into two behaviors above and below a line patterning width of 4 μm. The relationship between the film thickness and the deposited area was obtained as a function of f(x) = a[1 - e((-bx))]c. To find the tendency of the deposition rate of the TiO2 thin films onto the various linewidth areas, the relationship between the thickness of the TiO2 thin film and deposited linewidth was also studied. The thickness of the deposited TiO2 films was measured from the alpha-step profile analyses and cross-sectional SEM images. At the same time, a computer simulation was carried out to reveal the relationship between the TiO2 film thickness and deposited line width. The theoretical results suggest that the mass (velocity) flux in flow direction is directly affected to the film thickness.

A mechanical-force-driven physical vapour deposition approach to fabricating complex hydride nanostructures.

PubMed

Pang, Yuepeng; Liu, Yongfeng; Gao, Mingxia; Ouyang, Liuzhang; Liu, Jiangwen; Wang, Hui; Zhu, Min; Pan, Hongge

2014-03-24

Nanoscale hydrides desorb and absorb hydrogen at faster rates and lower temperatures than bulk hydrides because of their high surface areas, abundant grain boundaries and short diffusion distances. No current methods exist for the direct fabrication of nanoscale complex hydrides (for example, alanates, borohydrides) with unique morphologies because of their extremely high reducibility, relatively low thermodynamic stability and complicated elemental composition. Here, we demonstrate a mechanical-force-driven physical vapour deposition procedure for preparing nanoscale complex hydrides without scaffolds or supports. Magnesium alanate nanorods measuring 20-40 nm in diameter and lithium borohydride nanobelts measuring 10-40 nm in width are successfully synthesised on the basis of the one-dimensional structure of the corresponding organic coordination polymers. The dehydrogenation kinetics of the magnesium alanate nanorods are improved, and the nanorod morphology persists through the dehydrogenation-hydrogenation process. Our findings may facilitate the fabrication of such hydrides with improved hydrogen storage properties for practical applications.

A mechanical-force-driven physical vapour deposition approach to fabricating complex hydride nanostructures

NASA Astrophysics Data System (ADS)

Pang, Yuepeng; Liu, Yongfeng; Gao, Mingxia; Ouyang, Liuzhang; Liu, Jiangwen; Wang, Hui; Zhu, Min; Pan, Hongge

2014-03-01

Nanoscale hydrides desorb and absorb hydrogen at faster rates and lower temperatures than bulk hydrides because of their high surface areas, abundant grain boundaries and short diffusion distances. No current methods exist for the direct fabrication of nanoscale complex hydrides (for example, alanates, borohydrides) with unique morphologies because of their extremely high reducibility, relatively low thermodynamic stability and complicated elemental composition. Here, we demonstrate a mechanical-force-driven physical vapour deposition procedure for preparing nanoscale complex hydrides without scaffolds or supports. Magnesium alanate nanorods measuring 20-40 nm in diameter and lithium borohydride nanobelts measuring 10-40 nm in width are successfully synthesised on the basis of the one-dimensional structure of the corresponding organic coordination polymers. The dehydrogenation kinetics of the magnesium alanate nanorods are improved, and the nanorod morphology persists through the dehydrogenation-hydrogenation process. Our findings may facilitate the fabrication of such hydrides with improved hydrogen storage properties for practical applications.

Physical vapor deposition and metalorganic chemical vapor deposition of yttria-stabilized zirconia thin films

NASA Astrophysics Data System (ADS)

Kaufman, David Y.

Two vapor deposition techniques, dual magnetron oblique sputtering (DMOS) and metalorganic chemical vapor deposition (MOCVD), have been developed to produce yttria-stabilized zirconia (YSZ) films with unique microstructures. In particular, biaxially textured thin films on amorphous substrates and dense thin films on porous substrates have been fabricated by DMOS and MOCVD, respectively. DMOS YSZ thin films were deposited by reactive sputtering onto Si (native oxide surface) substrates positioned equidistant between two magnetron sources such that the fluxes arrived at oblique angles with respect to the substrate normal. Incident fluxes from two complimentary oblique directions were necessary for the development of biaxial texture. The films displayed a strong [001] out-of-plane orientation with the <110> direction in the film aligned with the incident flux. Biaxial texture improved with increasing oblique angle and film thickness, and was stronger for films deposited with Ne than with Ar. The films displayed a columnar microstructure with grain bundling perpendicular to the projected flux direction, the degree of which increased with oblique angle and thickness. The texture decreased by sputtering at pressures at which the flux of sputtered atoms was thermalized. These results suggested that grain alignment is due to directed impingement of both sputtered atoms and reflected energetic neutrals. The best texture, a {111} phi FWHM of 23°, was obtained in a 4.8 mum thick film deposited at an oblique angle of 56°. MOCVD YSZ thin films were deposited in a vertical cold-wall reactor using Zr(tmhd)4 and Y(tmhd)3 precursors. Fully stabilized YSZ films with 9 mol% could be deposited by controlling the bubbler temperatures. YSZ films on Si substrates displayed a transition at 525°C from surface kinetic limited growth, with an activation energy of 5.5 kJ/mole, to mass transport limited growth. Modifying the reactor by lowering the inlet height and introducing an Ar baffle

Deuterium permeation of amorphous alumina coating on 316L prepared by MOCVD

NASA Astrophysics Data System (ADS)

Li, Shuai; He, Di; Liu, Xiaopeng; Wang, Shumao; Jiang, Lijun

2012-01-01

The deuterium permeation behavior of the alumina coating on 316L stainless steel prepared by metal organic chemical vapor deposition (MOCVD) was investigated. The alumina coating was also characterized by X-ray photoelectron spectroscopy (XPS), X-ray diffraction (XRD) and scanning electron microscope (SEM). It was found that the as-prepared coating consisted of amorphous alumina. This alumina coating had a dense, crack-free and homogeneous morphology. Although the alumina coating was amorphous, effective suppression of deuterium permeation was demonstrated. The deuterium permeability of the alumina coating was 51-60 times less than that of the 316L stainless steel and 153-335 times less than that of the referred low activation martensitic steels at 860-960 K.

Direct growth of aligned graphitic nanoribbons from a DNA template by chemical vapour deposition.

PubMed

Sokolov, Anatoliy N; Yap, Fung Ling; Liu, Nan; Kim, Kwanpyo; Ci, Lijie; Johnson, Olasupo B; Wang, Huiliang; Vosgueritchian, Michael; Koh, Ai Leen; Chen, Jihua; Park, Jinseong; Bao, Zhenan

2013-01-01

Graphene, laterally confined within narrow ribbons, exhibits a bandgap and is envisioned as a next-generation material for high-performance electronics. To take advantage of this phenomenon, there is a critical need to develop methodologies that result in graphene ribbons <10 nm in width. Here we report the use of metal salts infused within stretched DNA as catalysts to grow nanoscopic graphitic nanoribbons. The nanoribbons are termed graphitic as they have been determined to consist of regions of sp(2) and sp(3) character. The nanoscopic graphitic nanoribbons are micrometres in length, <10 nm in width, and take on the shape of the DNA template. The DNA strand is converted to a graphitic nanoribbon by utilizing chemical vapour deposition conditions. Depending on the growth conditions, metallic or semiconducting graphitic nanoribbons are formed. Improvements in the growth method have potential to lead to bottom-up synthesis of pristine single-layer graphene nanoribbons.

Synthesis and characterization of heteroleptic titanium MOCVD precursors for TiO2 thin films.

PubMed

Kim, Euk Hyun; Lim, Min Hyuk; Lah, Myoung Soo; Koo, Sang Man

2018-02-13

Heteroleptic titanium alkoxides with three different ligands, i.e., [Ti(O i Pr)(X)(Y)] (X = tridentate, Y = bidentate ligands), were synthesized to find efficient metal organic chemical vapor deposition (MOCVD) precursors for TiO 2 thin films. Acetylacetone (acacH) or 2,2,6,6-tetramethyl-3,5-heptanedione (thdH) was employed as a bidentate ligand, while N-methyldiethanolamine (MDEA) was employed as a tridentate ligand. It was expected that the oxygen and moisture susceptibility of titanium alkoxides, as well as their tendency to form oligomers, would be greatly reduced by placing multidentate and bulky ligands around the center Ti atom. The synthesized heteroleptic titanium alkoxides were characterized both physicochemically and crystallographically, and their thermal behaviors were also investigated. [Ti(O i Pr)(MDEA)(thd)] was found to be monomeric and stable against moisture; it also showed good volatility in the temperature window between volatilization and decomposition. This material was used as a single-source precursor during MOCVD to generate TiO 2 thin films on silicon wafers. The high thermal stability of [Ti(O i Pr)(MDEA)(thd)] enabled the fabrication of TiO 2 films over a wide temperature range, with steady growth rates between 500 and 800 °C.

Growth of carbon nanotubes (CNTs) on metallic underlayers by diffusion plasma-enhanced chemical vapour deposition (DPECVD)

NASA Astrophysics Data System (ADS)

Kim, S. M.; Gangloff, L.

2009-10-01

Here, we demonstrate the low-temperature (480-612 °C) synthesis of carbon nanotubes (CNTs) on different metallic underlayers (i.e., NiV, Ir, Ag, Pt, W, and Ta) using diffusion (dc) plasma-enhanced (~20 W, -600 V) chemical vapour deposition (DPECVD). The catalyst used is bi-layered Fe/Al and the feedstock used is a mixture of C 2H 2 and NH 3 (1:4). The crucial component is the diffusion of radical ions and hydrogen generated such as H 2/H +/H 2+/NH 3+/CH 2+/C 2H 2+ (which are confirmed by in-situ mass spectroscopy) from the nozzle, where it is inserted for most effective plasma diffusion between a substrate and a gas distributor.

Osteoconductive Potential of Barrier NanoSiO2 PLGA Membranes Functionalized by Plasma Enhanced Chemical Vapour Deposition

PubMed Central

Terriza, Antonia; Vilches-Pérez, Jose I.; de la Orden, Emilio; Yubero, Francisco; Gonzalez-Caballero, Juan L.; González-Elipe, Agustin R.; Vilches, José; Salido, Mercedes

2014-01-01

The possibility of tailoring membrane surfaces with osteoconductive potential, in particular in biodegradable devices, to create modified biomaterials that stimulate osteoblast response should make them more suitable for clinical use, hopefully enhancing bone regeneration. Bioactive inorganic materials, such as silica, have been suggested to improve the bioactivity of synthetic biopolymers. An in vitro study on HOB human osteoblasts was performed to assess biocompatibility and bioactivity of SiO2 functionalized poly(lactide-co-glycolide) (PLGA) membranes, prior to clinical use. A 15 nm SiO2 layer was deposited by plasma enhanced chemical vapour deposition (PECVD), onto a resorbable PLGA membrane. Samples were characterized by X-ray photoelectron spectroscopy, atomic force microscopy, scanning electron microscopy, and infrared spectroscopy (FT-IR). HOB cells were seeded on sterilized test surfaces where cell morphology, spreading, actin cytoskeletal organization, and focal adhesion expression were assessed. As proved by the FT-IR analysis of samples, the deposition by PECVD of the SiO2 onto the PLGA membrane did not alter the composition and other characteristics of the organic membrane. A temporal and spatial reorganization of cytoskeleton and focal adhesions and morphological changes in response to SiO2 nanolayer were identified in our model. The novedous SiO2 deposition method is compatible with the standard sterilization protocols and reveals as a valuable tool to increase bioactivity of resorbable PLGA membranes. PMID:24883304

Plasma enhanced chemical vapour deposition of silica onto Ti: Analysis of surface chemistry, morphology and functional hydroxyl groups

PubMed Central

Szili, Endre J.; Kumar, Sunil; Smart, Roger St. C.; Lowe, Rachel; Saiz, Eduardo; Voelcker, Nicolas H.

2009-01-01

Previously, we have developed and characterised a procedure for the deposition of thin silica films by a plasma enhanced chemical vapour deposition (PECVD) procedure using tetraethoxysilane (TEOS) as the main precursor. We have used the silica coatings for improving the corrosion resistance of metals and for enhancing the bioactivity of biomedical metallic implants. Recently, we have been fine-tuning the PECVD method for producing high quality and reproducible PECVD-silica (PECVD-Si) coatings on metals, primarily for biomaterial applications. In order to understand the interaction of the PECVD-Si coatings with biological species (such as proteins and cells), it is important to first analyse the properties of the silica films deposited using the optimised parameters. Therefore, this current investigation was carried out to analyse the characteristic features of PECVD-Si deposited on Ti substrates (PECVD-Si-Ti). We determined that the PECVD-Si coatings on Ti were conformal to the substrate surface, strongly adhered to the underlying substrate and were resistant to delamination. The PECVD-Si surface was composed of stoichiometric SiO2, showed a low carbon content (below 10 at.%) and was very hydrophilic (contact angle <10°). Finally, we also showed that the PECVD-Si coatings contain functional hydroxyl groups. PMID:19809536

A chemical and fluid dynamic study of the chemical vapor deposition of aluminum nitride in a vertical reactor

NASA Astrophysics Data System (ADS)

Bather, Wayne Anthony

The metalorganic chemical vapor deposition (MOCVD) growth of compound semiconductors has become important in producing many high performance electronic and optoelectronic devices from the wide bandgaps III-V nitrides, for example, aluminum nitride (AlN). A systematic theoretical and experimental investigation of the chemistry and mass transport process in a MOCVD system can yield predictive models of the deposition process. The chemistries and fluid dynamics of the MOCVD growth of AlN in a vertical reactor is analyzed and characterized in order to parameterize and model the deposition process. A Fourier Transform Infrared (FTIR) spectroscopic study of the predeposition reactions between trimethylaluminum (TMAl) and ammonia (NHsb3) is carried out in a static gas cell to examine the primary homogeneous gas phase reactions, pyrolysis of the reactants, and adduct formation, possibly accompanied by elimination reactions. A series of reactions, based on laboratory studies and literature review, is then proposed to model the deposition process. All pertinent kinetic, thermochemical, and transport properties were obtained. Utilizing a mass transport model, we performed computational fluid dynamics calculations using the FLUENT software package. We determined temperature, velocity, and concentration profiles, along with deposition rates inside the experimental vertical CVD reactor in the Howard University Material Science Research Center of Excellence. Experimental deposition rate data were found to be in good agreement with those predicted from the simulations, thus validating the proposed model. The control of the homogeneous gas phase reaction leading to the formation and subsequent decomposition of the adduct is critical to the formation of device-grade AlN films. Many basic processes occurring during MOCVD of AlN are still not completely understood, and none of the detailed surface reaction mechanisms are known.

(111)-oriented Pb(Zr ,Ti)O3 films deposited on SrRuO3/Pt electrodes: Reproducible preparation by metal organic chemical vapor deposition, top electrode influence, and reliability

NASA Astrophysics Data System (ADS)

Menou, Nicolas; Funakubo, Hiroshi

2007-12-01

(111)-textured Pb(Zr0.4Ti0.6)O3 films (thickness of ˜120nm) were deposited on (111)-oriented SrRuO3 bottom electrodes by pulse metal organic chemical vapor deposition (MOCVD). PZT single phase was evidenced over a large range of Pb precursor input rate into the MOCVD chamber. In this process window, the good control of the (111) texture of PZT films was confirmed. It is shown that the control of both the composition and orientation of PZT films leads to reproducible electric properties (Pr, Vc, resistance to fatigue) across the process window. Furthermore, the impact of the top electrode chemical nature, elaboration process, and annealing process upon the electric properties was studied systematically.

MEDUSA: The ExoMars experiment for in-situ monitoring of dust and water vapour

NASA Astrophysics Data System (ADS)

Colangeli, L.; Lopez-Moreno, J. J.; Nørnberg, P.; Della Corte, V.; Esposito, F.; Mazzotta Epifani, E.; Merrison, J.; Molfese, C.; Palumbo, P.; Rodriguez-Gomez, J. F.; Rotundi, A.; Visconti, G.; Zarnecki, J. C.; The International Medusa Team

2009-07-01

Dust and water vapour are fundamental components of the Martian atmosphere. In view of tracing the past environmental conditions on Mars, that possibly favoured the appearing of life forms, it is important to study the present climate and its evolution. Here dust and water vapour have (and have had) strong influence. Of major scientific interest is the quantity and physical, chemical and electrical properties of dust and the abundance of water vapour dispersed in the atmosphere and their exchange with the surface. Moreover, in view of the exploration of the planet with automated systems and in the future by manned missions, it is of primary importance to analyse the hazards linked to these environmental factors. The Martian Environmental Dust Systematic Analyser (MEDUSA) experiment, included in the scientific payload of the ESA ExoMars mission, accommodates a complement of sensors, based on optical detection and cumulative mass deposition, that aims to study dust and water vapour in the lower Martian atmosphere. The goals are to study, for the first time, in-situ and quantitatively, physical properties of the airborne dust, including the cumulative dust mass flux, the dust deposition rate, the physical and electrification properties, the size distribution of sampled particles and the atmospheric water vapour abundance versus time.

Metallorganic chemical vapor deposition and atomic layer deposition approaches for the growth of hafnium-based thin films from dialkylamide precursors for advanced CMOS gate stack applications

NASA Astrophysics Data System (ADS)

Consiglio, Steven P.

To continue the rapid progress of the semiconductor industry as described by Moore's Law, the feasibility of new material systems for front end of the line (FEOL) process technologies needs to be investigated, since the currently employed polysilicon/SiO2-based transistor system is reaching its fundamental scaling limits. Revolutionary breakthroughs in complementary-metal-oxide-semiconductor (CMOS) technology were recently announced by Intel Corporation and International Business Machines Corporation (IBM), with both organizations revealing significant progress in the implementation of hafnium-based high-k dielectrics along with metal gates. This announcement was heralded by Gordon Moore as "...the biggest change in transistor technology since the introduction of polysilicon gate MOS transistors in the late 1960s." Accordingly, the study described herein focuses on the growth of Hf-based dielectrics and Hf-based metal gates using chemical vapor-based deposition methods, specifically metallorganic chemical vapor deposition (MOCVD) and atomic layer deposition (ALD). A family of Hf source complexes that has received much attention recently due to their desirable properties for implementation in wafer scale manufacturing is the Hf dialkylamide precursors. These precursors are room temperature liquids and possess sufficient volatility and desirable decomposition characteristics for both MOCVD and ALD processing. Another benefit of using these sources is the existence of chemically compatible Si dialkylamide sources as co-precursors for use in Hf silicate growth. The first part of this study investigates properties of MOCVD-deposited HfO2 and HfSixOy using dimethylamido Hf and Si precursor sources using a customized MOCVD reactor. The second part of this study involves a study of wet and dry surface pre-treatments for ALD growth of HfO2 using tetrakis(ethylmethylamido)hafnium in a wafer scale manufacturing environment. The third part of this study is an investigation of

Towards engineered branch placement: Unreal™ match between vapour-liquid-solid glancing angle deposition nanowire growth and simulation

NASA Astrophysics Data System (ADS)

Taschuk, M. T.; Tucker, R. T.; LaForge, J. M.; Beaudry, A. L.; Kupsta, M. R.; Brett, M. J.

2013-12-01

The vapour-liquid-solid glancing angle deposition (VLS-GLAD) process is capable of producing complex nanotree structures with control over azimuthal branch orientation and height. We have developed a thin film growth simulation including ballistic deposition, simplified surface diffusion, and droplet-mediated cubic crystal growth for the VLS-GLAD process using the UnrealTM Development Kit. The use of a commercial game engine has provided an interactive environment while allowing a custom physics implementation. Our simulation's output is verified against experimental data, including a volumetric film reconstruction produced using focused ion beam and scanning-electron microscopy (SEM), crystallographic texture, and morphological characteristics such as branch orientation. We achieve excellent morphological and texture agreement with experimental data, as well as qualitative agreement with SEM imagery. The simplified physics in our model reproduces the experimental films, indicating that the dominant role flux geometry plays in the VLS-GLAD competitive growth process responsible for azimuthally oriented branches and biaxial crystal texture evolution. The simulation's successful reproduction of experimental data indicates that it should have predictive power in designing novel VLS-GLAD structures.

Impact of oxygen precursor flow on the forward bias behavior of MOCVD-Al2O3 dielectrics grown on GaN

NASA Astrophysics Data System (ADS)

Chan, Silvia H.; Bisi, Davide; Liu, Xiang; Yeluri, Ramya; Tahhan, Maher; Keller, Stacia; DenBaars, Steven P.; Meneghini, Matteo; Mishra, Umesh K.

2017-11-01

This paper investigates the effects of the oxygen precursor flow supplied during metalorganic chemical vapor deposition (MOCVD) of Al2O3 films on the forward bias behavior of Al2O3/GaN metal-oxide-semiconductor capacitors. The low oxygen flow (100 sccm) delivered during the in situ growth of Al2O3 on GaN resulted in films that exhibited a stable capacitance under forward stress, a lower density of stress-generated negative fixed charges, and a higher dielectric breakdown strength compared to Al2O3 films grown under high oxygen flow (480 sccm). The low oxygen grown Al2O3 dielectrics exhibited lower gate current transients in stress/recovery measurements, providing evidence of a reduced density of trap states near the GaN conduction band and an enhanced robustness under accumulated gate stress. This work reveals oxygen flow variance in MOCVD to be a strategy for controlling the dielectric properties and performance.

Vapour sensitivity of an ALD hierarchical photonic structure inspired by Morpho.

PubMed

Poncelet, Olivier; Tallier, Guillaume; Mouchet, Sébastien R; Crahay, André; Rasson, Jonathan; Kotipalli, Ratan; Deparis, Olivier; Francis, Laurent A

2016-05-09

The unique architecture of iridescent Morpho butterfly scales is known to exhibit different optical responses to various vapours. However, the mechanism behind this phenomenon is not fully quantitatively understood. This work reports on process developments in the micro-fabrication of a Morpho-inspired photonic structure in atomic layer deposited (ALD) materials in order to investigate the vapour optical sensitivity of such artificial nanostructures. By developing recipes for dry and wet etching of ALD oxides, we micro-fabricated two structures: one combining Al2O3 and TiO2, and the other combining Al2O3 and HfO2. For the first time, we report the optical response of such ALD Morpho-like structures measured under a controlled flow of either ethanol or isopropyl alcohol (IPA) vapour. In spite of the small magnitude of the effect, the results show a selective vapour response (depending on the materials used).

Comprehensive investigation of HgCdTe metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Raupp, Gregory B.

1993-01-01

The principal objective of this experimental and theoretical research program was to explore the possibility of depositing high quality epitaxial CdTe and HgCdTe at very low pressures through metalorganic chemical vapor deposition (MOCVD). We explored two important aspects of this potential process: (1) the interaction of molecular flow transport and deposition in an MOCVD reactor with a commercial configuration, and (2) the kinetics of metal alkyl source gas adsorption, decomposition and desorption from the growing film surface using ultra high vacuum surface science reaction techniques. To explore the transport-reaction issue, we have developed a reaction engineering analysis of a multiple wafer-in-tube ultrahigh vacuum chemical vapor deposition (UHV/CVD) reactor which allows an estimate of wafer or substrate throughput for a reactor of fixed geometry and a given deposition chemistry with specified film thickness uniformity constraints. The model employs a description of ballistic transport and reaction based on the pseudo-steady approximation to the Boltzmann equation in the limit of pure molecular flow. The model representation takes the form of an integral equation for the flux of each reactant or intermediate species to the wafer surfaces. Expressions for the reactive sticking coefficients (RSC) for each species must be incorporated in the term which represents reemission from a wafer surface. The interactions of MOCVD precursors with Si and CdTe were investigated using temperature programmed desorption (TPD) in ultra high vacuum combined with Auger electron spectroscopy (AES). These studies revealed that diethyltellurium (DETe) and dimethylcadmium (DMCd) adsorb weakly on clean Si(100) and desorb upon heating without decomposing. These precursors adsorb both weakly and strongly on CdTe(111)A, with DMCd exhibiting the stronger interaction with the surface than DETe.

High performance of Ga-doped ZnO transparent conductive layers using MOCVD for GaN LED applications.

PubMed

Horng, Ray-Hua; Shen, Kun-Ching; Yin, Chen-Yang; Huang, Chiung-Yi; Wuu, Dong-Sing

2013-06-17

High performance of Ga-doped ZnO (GZO) prepared using metalorganic chemical vapor deposition (MOCVD) was employed in GaN blue light-emitting diodes (LEDs) as transparent conductive layers (TCL). By the post-annealing process, the annealed 800°C GZO films exhibited a high transparency above 97% at wavelength of 450 nm. The contact resistance of GZO decreased with the annealing temperature increasing. It was attributed to the improvement of the GZO crystal quality, leading to an increase in electron concentration. It was also found that some Zn atom caused from the decomposition process diffused into the p-GaN surface of LED, which generated a stronger tunneling effect at the GZO/p-GaN interface and promoted the formation of ohmic contact. Moreover, contrast to the ITO-LED, a high light extraction efficiency of 77% was achieved in the GZO-LED at injection current of 20 mA. At 350 mA injection current, the output power of 256.51 mW of GZO-LEDs, corresponding to a 21.5% enhancement as compared to ITO-LEDs was obtained; results are promising for the development of GZO using the MOCVD technique for GaN LED applications.

Molecular beam epitaxy and metalorganic chemical vapor deposition growth of epitaxial CdTe on (100) GaAs/Si and (111) GaAs/Si substrates

NASA Technical Reports Server (NTRS)

Nouhi, A.; Radhakrishnan, G.; Katz, J.; Koliwad, K.

1988-01-01

Epitaxial CdTe has been grown on both (100)GaAs/Si and (111)GaAs/Si substrates. A combination of molecular beam epitaxy (MBE) and metalorganic chemical vapor deposition (MOCVD) has been employed for the first time to achieve this growth: the GaAs layers are grown on Si substrates by MBE and the CdTe film is subsequently deposited on GaAs/Si by MOCVD. The grown layers have been characterized by X-ray diffraction, scanning electron microscopy, and photoluminescence.

Growth mechanisms in chemical vapour deposited carbon nanotubes

NASA Astrophysics Data System (ADS)

Vinciguerra, Vincenzo; Buonocore, Francesco; Panzera, Giuseppe; Occhipinti, Luigi

2003-06-01

We present a model for the process of the growth of carbon nanotubes (CNTs) obtained by chemical vapour deposition in the presence of transition metal nanoparticles (Me-NPs) which act as a catalyst. We have deduced that the growth of a CNT occurs in the presence of two forces: (i) a viscous force, due to the surrounding hot gas, which opposes and slows down the growth of the CNT, and (ii) an extrusive force that causes the growth and that in the steady-state stage of the growth is completely balanced by the viscous force. We believe that it is the great decrease in free energy in the assembling reaction that occurs at the interface of the Me-NP catalyst that causes the extrusive force for the growth of a CNT. Moreover, the process of chemisorption of a C2 fragment, through the interaction of the C2-pi system with the 3d metal orbitals, has been considered as well as the coordination action of the Fe, Ni and Co metal surfaces. The structural properties of the Fe, Co and Ni surfaces show that the (1, - 1, 0) planes of Fe and the (1, 1, 1) planes of Co and Ni exhibit the symmetry and distances required to overlap with the lattice of a graphene sheet. This gives us information about the coordination mechanism responsible for assembling the CNTs. In fact, we show that it is possible to cleave an Me-NP in such a way as to match the correct symmetry and dimension of the armchair structure of a single-walled nanotube. The mechanism of C2 addition at the edge of the growing CNT has also been considered in relation to the highest occupied molecular orbital-lowest unoccupied molecular orbital (HOMO-LUMO) symmetry. We demonstrate that the action of d orbitals of the metal atoms forming the Me-NP makes possible the thermally forbidden reaction, which involves the C2-pi system.

Incorporation of zinc in MOCVD growth of Ga 0.5In 0.5P

NASA Astrophysics Data System (ADS)

Kurtz, Sarah R.; Olson, J. M.; Kibbler, A. E.; Bertness, K. A.

1992-11-01

Data are presented for the Zn doping of Ga 0.5In 0.5P, showing that the hole and zinc concentrations increase almost linearly with zinc flow, and also increase with the V/III ratio and with growth rate at a fixed V/III ratio. These observations are consistent with other reports that show the incorporation of zinc to increase with V/III ratio for both GaAs and Ga 0.5In 0.5P deposition by metalorganic chemical vapor deposition (MOCVD). The growth-rate dependence of the zinc incorporation in Ga 0.5In 0.5P has not previously been reported. A model based on varying group V coverage of the step where zinc is most strongly bound is presented and compared with the data. The model predicts that the zinc incorporation increases with increasing phosphorus overpressure, but should be independent of group III overpressure in the parameter space investigated here.

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

NASA Technical Reports Server (NTRS)

Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

1990-01-01

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectric having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writting capability, complex device structures like three-terminal hybrid semiconductors/superconductors transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray defraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

In-situ integrated processing and characterization of thin films of high temperature superconductors, dielectrics and semiconductors by MOCVD

NASA Technical Reports Server (NTRS)

Singh, R.; Sinha, S.; Hsu, N. J.; Thakur, R. P. S.; Chou, P.; Kumar, A.; Narayan, J.

1991-01-01

In this strategy of depositing the basic building blocks of superconductors, semiconductors, and dielectrics having common elements, researchers deposited superconducting films of Y-Ba-Cu-O, semiconductor films of Cu2O, and dielectric films of BaF2 and Y2O3 by metal oxide chemical vapor deposition (MOCVD). By switching source materials entering the chamber, and by using direct writing capability, complex device structures like three terminal hybrid semiconductor/superconductor transistors can be fabricated. The Y-Ba-Cu-O superconducting thin films on BaF2/YSZ substrates show a T(sub c) of 80 K and are textured with most of the grains having their c-axis or a-axis perpendicular to the substrate. Electrical characteristics as well as structural characteristics of superconductors and related materials obtained by x-ray deffraction, electron microscopy, and energy dispersive x-ray analysis are discussed.

High-performance InGaN/GaN MQW LEDs with Al-doped ZnO transparent conductive layers grown by MOCVD using H2O as an oxidizer

NASA Astrophysics Data System (ADS)

Lin, Jia-Yong; Pei, Yan-Li; Zhuo, Yi; Chen, Zi-Min; Hu, Rui-Qin; Cai, Guang-Shuo; Wang, Gang

2016-11-01

In this study, the high performance of InGaN/GaN multiple quantum well light-emitting diodes (LEDs) with Al-doped ZnO (AZO) transparent conductive layers (TCLs) has been demonstrated. The AZO-TCLs were fabricated on the n+-InGaN contact layer by metal organic chemical vapor deposition (MOCVD) using H2O as an oxidizer at temperatures as low as 400 °C without any post-deposition annealing. It shows a high transparency (98%), low resistivity (510-4 Ω·cm), and an epitaxial-like excellent interface on p-GaN with an n+-InGaN contact layer. A forward voltage of 2.82 V @ 20 mA was obtained. Most importantly, the power efficiencies can be markedly improved by 53.8%@20 mA current injection and 39.6%@350 mA current injection compared with conventional LEDs with indium tin oxide TCL (LED-III), and by 28.8%@20 mA current injection and 4.92%@350 mA current injection compared with LEDs with AZO-TCL prepared by MOCVD using O2 as an oxidizer (LED-II), respectively. The results indicate that the AZO-TCL grown by MOCVD using H2O as an oxidizer is a promising TCL for a low-cost and high-efficiency GaN-based LED application. Project supported by the National Natural Science Foundation of China (Grant Nos. 61204091, 61404177, 51402366, and U1201254) and the Science and Technology Planning Project of Guangdong Province, China (Grant No. 2015B010132006).

Electrical properties of GaAs metal–oxide–semiconductor structure comprising Al{sub 2}O{sub 3} gate oxide and AlN passivation layer fabricated in situ using a metal–organic vapor deposition/atomic layer deposition hybrid system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Aoki, Takeshi, E-mail: aokit@sc.sumitomo-chem.co.jp; Fukuhara, Noboru; Osada, Takenori

2015-08-15

This paper presents a compressive study on the fabrication and optimization of GaAs metal–oxide–semiconductor (MOS) structures comprising a Al{sub 2}O{sub 3} gate oxide, deposited via atomic layer deposition (ALD), with an AlN interfacial passivation layer prepared in situ via metal–organic chemical vapor deposition (MOCVD). The established protocol afforded self-limiting growth of Al{sub 2}O{sub 3} in the atmospheric MOCVD reactor. Consequently, this enabled successive growth of MOCVD-formed AlN and ALD-formed Al{sub 2}O{sub 3} layers on the GaAs substrate. The effects of AlN thickness, post-deposition anneal (PDA) conditions, and crystal orientation of the GaAs substrate on the electrical properties of the resultingmore » MOS capacitors were investigated. Thin AlN passivation layers afforded incorporation of optimum amounts of nitrogen, leading to good capacitance–voltage (C–V) characteristics with reduced frequency dispersion. In contrast, excessively thick AlN passivation layers degraded the interface, thereby increasing the interfacial density of states (D{sub it}) near the midgap and reducing the conduction band offset. To further improve the interface with the thin AlN passivation layers, the PDA conditions were optimized. Using wet nitrogen at 600 °C was effective to reduce D{sub it} to below 2 × 10{sup 12} cm{sup −2} eV{sup −1}. Using a (111)A substrate was also effective in reducing the frequency dispersion of accumulation capacitance, thus suggesting the suppression of traps in GaAs located near the dielectric/GaAs interface. The current findings suggest that using an atmosphere ALD process with in situ AlN passivation using the current MOCVD system could be an efficient solution to improving GaAs MOS interfaces.« less

Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

NASA Astrophysics Data System (ADS)

Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A.; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

2016-03-01

Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration.

PubMed

Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A; Yoo, Jung Ho; Lee, Kyoung G; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

2016-03-10

Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties.

Graphene growth from reduced graphene oxide by chemical vapour deposition: seeded growth accompanied by restoration

PubMed Central

Chang, Sung-Jin; Hyun, Moon Seop; Myung, Sung; Kang, Min-A; Yoo, Jung Ho; Lee, Kyoung G.; Choi, Bong Gill; Cho, Youngji; Lee, Gaehang; Park, Tae Jung

2016-01-01

Understanding the underlying mechanisms involved in graphene growth via chemical vapour deposition (CVD) is critical for precise control of the characteristics of graphene. Despite much effort, the actual processes behind graphene synthesis still remain to be elucidated in a large number of aspects. Herein, we report the evolution of graphene properties during in-plane growth of graphene from reduced graphene oxide (RGO) on copper (Cu) via methane CVD. While graphene is laterally grown from RGO flakes on Cu foils up to a few hundred nanometres during CVD process, it shows appreciable improvement in structural quality. The monotonous enhancement of the structural quality of the graphene with increasing length of the graphene growth from RGO suggests that seeded CVD growth of graphene from RGO on Cu surface is accompanied by the restoration of graphitic structure. The finding provides insight into graphene growth and defect reconstruction useful for the production of tailored carbon nanostructures with required properties. PMID:26961409

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

NASA Astrophysics Data System (ADS)

Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

2015-04-01

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10-9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices.

Quantum Hall resistance standards from graphene grown by chemical vapour deposition on silicon carbide

PubMed Central

Lafont, F.; Ribeiro-Palau, R.; Kazazis, D.; Michon, A.; Couturaud, O.; Consejo, C.; Chassagne, T.; Zielinski, M.; Portail, M.; Jouault, B.; Schopfer, F.; Poirier, W.

2015-01-01

Replacing GaAs by graphene to realize more practical quantum Hall resistance standards (QHRS), accurate to within 10−9 in relative value, but operating at lower magnetic fields than 10 T, is an ongoing goal in metrology. To date, the required accuracy has been reported, only few times, in graphene grown on SiC by Si sublimation, under higher magnetic fields. Here, we report on a graphene device grown by chemical vapour deposition on SiC, which demonstrates such accuracies of the Hall resistance from 10 T up to 19 T at 1.4 K. This is explained by a quantum Hall effect with low dissipation, resulting from strongly localized bulk states at the magnetic length scale, over a wide magnetic field range. Our results show that graphene-based QHRS can replace their GaAs counterparts by operating in as-convenient cryomagnetic conditions, but over an extended magnetic field range. They rely on a promising hybrid and scalable growth method and a fabrication process achieving low-electron-density devices. PMID:25891533

Sticking non-stick: Surface and Structure control of Diamond-like Carbon in Plasma Enhanced Chemical Vapour Deposition

NASA Astrophysics Data System (ADS)

Jones, B. J.; Nelson, N.

2016-10-01

This short review article explores the practical use of diamond-like carbon (DLC) produced by plasma enhanced chemical vapour deposition (PECVD). Using as an example issues relating to the DLC coating of a hand-held surgical device, we draw on previous works using atomic force microscopy, X-ray photoelectron spectroscopy, Raman spectroscopy, scanning electron microscopy, tensiometry and electron paramagnetic resonance. Utilising data from these techniques, we examine the surface structure, substrate-film interface and thin film microstructure, such as sp2/sp3 ratio (graphitic/diamond-like bonding ratio) and sp2 clustering. We explore the variations in parameters describing these characteristics, and relate these to the final device properties such as friction, wear resistance, and diffusion barrier integrity. The material and device characteristics are linked to the initial plasma and substrate conditions.

Method of making AlInSb by metal-organic chemical vapor deposition

DOEpatents

Biefeld, Robert M.; Allerman, Andrew A.; Baucom, Kevin C.

2000-01-01

A method for producing aluminum-indium-antimony materials by metal-organic chemical vapor deposition (MOCVD). This invention provides a method of producing Al.sub.X In.sub.1-x Sb crystalline materials by MOCVD wherein an Al source material, an In source material and an Sb source material are supplied as a gas to a heated substrate in a chamber, said Al source material, In source material, and Sb source material decomposing at least partially below 525.degree. C. to produce Al.sub.x In.sub.1-x Sb crystalline materials wherein x is greater than 0.002 and less than one.

Structural and optical properties of Ga auto-incorporated InAlN epilayers

NASA Astrophysics Data System (ADS)

Taylor, E.; Smith, M. D.; Sadler, T. C.; Lorenz, K.; Li, H. N.; Alves, E.; Parbrook, P. J.; Martin, R. W.

2014-12-01

InAlN epilayers deposited on thick GaN buffer layers grown by metalorganic chemical vapour deposition (MOCVD) revealed an auto-incorporation of Ga when analysed by wavelength dispersive x-ray (WDX) spectroscopy and Rutherford backscattering spectrometry (RBS). Samples were grown under similar conditions with the change in reactor flow rate resulting in varying Ga contents of 12-24%. The increase in flow rate from 8000 to 24 000 sccm suppressed the Ga auto-incorporation which suggests that the likely cause is from residual Ga left behind from previous growth runs. The luminescence properties of the resultant InAlGaN layers were investigated using cathodoluminescence (CL) measurements.

A difference in using atomic layer deposition or physical vapour deposition TiN as electrode material in metal-insulator-metal and metal-insulator-silicon capacitors.

PubMed

Groenland, A W; Wolters, R A M; Kovalgin, A Y; Schmitz, J

2011-09-01

In this work, metal-insulator-metal (MIM) and metal-insulator-silicon (MIS) capacitors are studied using titanium nitride (TiN) as the electrode material. The effect of structural defects on the electrical properties on MIS and MIM capacitors is studied for various electrode configurations. In the MIM capacitors the bottom electrode is a patterned 100 nm TiN layer (called BE type 1), deposited via sputtering, while MIS capacitors have a flat bottom electrode (called BE type 2-silicon substrate). A high quality 50-100 nm thick SiO2 layer, made by inductively-coupled plasma CVD at 150 degrees C, is deposited as a dielectric on top of both types of bottom electrodes. BE type 1 (MIM) capacitors have a varying from low to high concentration of structural defects in the SiO2 layer. BE type 2 (MIS) capacitors have a low concentration of structural defects and are used as a reference. Two sets of each capacitor design are fabricated with the TiN top electrode deposited either via physical vapour deposition (PVD, i.e., sputtering) or atomic layer deposition (ALD). The MIM and MIS capacitors are electrically characterized in terms of the leakage current at an electric field of 0.1 MV/cm (I leak) and for different structural defect concentrations. It is shown that the structural defects only show up in the electrical characteristics of BE type 1 capacitors with an ALD TiN-based top electrode. This is due to the excellent step coverage of the ALD process. This work clearly demonstrates the sensitivity to process-induced structural defects, when ALD is used as a step in process integration of conductors on insulation materials.

A Comparative Study of the Dispersion of Multi-Wall Carbon Nanotubes Made by Arc-Discharge and Chemical Vapour Deposition.

PubMed

Frømyr, Tomas-Roll; Bourgeaux-Goget, Marie; Hansen, Finn Knut

2015-05-01

A method has been developed to characterize the dispersion of multi-wall carbon nanotubes in water using a disc centrifuge for the detection of individual carbon nanotubes, residual aggregates, and contaminants. Carbon nanotubes produced by arc-discharge have been measured and compared with carbon nanotubes produced by chemical vapour deposition. Studies performed on both pristine (see text) arc-discharge nanotubes is rather strong and that high ultra-sound intensity is required to achieve complete dispersion of carbon nanotube bundles. The logarithm of the mode of the particle size distribution of the arc-discharge carbon nanotubes was found to be a linear function of the logarithm of the total ultrasonic energy input in the dispersion process.

High-performance perovskite CH3NH3PbI3 thin films for solar cells prepared by single-source physical vapour deposition

PubMed Central

Fan, Ping; Gu, Di; Liang, Guang-Xing; Luo, Jing-Ting; Chen, Ju-Long; Zheng, Zhuang-Hao; Zhang, Dong-Ping

2016-01-01

In this work, an alternative route to fabricating high-quality CH3NH3PbI3 thin films is proposed. Single-source physical vapour deposition (SSPVD) without a post-heat-treating process was used to prepare CH3NH3PbI3 thin films at room temperature. This new process enabled complete surface coverage and moisture stability in a non-vacuum solution. Moreover, the challenges of simultaneously controlling evaporation processes of the organic and inorganic sources via dual-source vapour evaporation and the heating process required to obtain high crystallization were avoided. Excellent composition with stoichiometry transferred from the powder material, a high level of tetragonal phase-purity, full surface coverage, well-defined grain structure, high crystallization and reproducibility were obtained. A PCE of approximately 10.90% was obtained with a device based on SSPVD CH3NH3PbI3. These initial results suggest that SSPVD is a promising method to significantly optimize perovskite CH3NH3PbI3 solar cell efficiency. PMID:27426686

Chemical Vapor Deposition of Turbine Thermal Barrier Coatings

NASA Technical Reports Server (NTRS)

Haven, Victor E.

1999-01-01

Ceramic thermal barrier coatings extend the operating temperature range of actively cooled gas turbine components, therefore increasing thermal efficiency. Performance and lifetime of existing ceram ic coatings are limited by spallation during heating and cooling cycles. Spallation of the ceramic is a function of its microstructure, which is determined by the deposition method. This research is investigating metalorganic chemical vapor deposition (MOCVD) of yttria stabilized zirconia to improve performance and reduce costs relative to electron beam physical vapor deposition. Coatings are deposited in an induction-heated, low-pressure reactor at 10 microns per hour. The coating's composition, structure, and response to the turbine environment will be characterized.

Carbon Nanotubes/Nanofibers by Plasma Enhanced Chemical Vapour Deposition

NASA Technical Reports Server (NTRS)

Teo, K. B. K.; Hash, D. B.; Bell, M. S.; Chhowalla, M.; Cruden, B. A.; Amaratunga, G. A. J.; Meyyappan, M.; Milne, W. I.

2005-01-01

Plasma enhanced chemical vapour deposition (PECVD) has been recently used for the production of vertically aligned carbon nanotubedfibers (CN) directly on substrates. These structures are potentially important technologically as electron field emitters (e.g. microguns, microwave amplifiers, displays), nanoelectrodes for sensors, filter media, superhydrophobic surfaces and thermal interface materials for microelectronics. A parametric study on the growth of CN grown by glow discharge dc-PECVD is presented. In this technique, a substrate containing thin film Ni catalyst is exposed to C2H2 and NH3 gases at 700 C. Without plasma, this process is essentially thermal CVD which produces curly spaghetti-like CN as seen in Fig. 1 (a). With the plasma generated by biasing the substrate at -6OOV, we observed that the CN align vertically during growth as shown in Fig. l(b), and that the magnitude of the applied substrate bias affects the degree of alignment. The thickness of the thin film Ni catalyst was found to determine the average diameter and inversely the length of the CN. The yield and density of the CN were controlled by the use of different diffusion barrier materials under the Ni catalyst. Patterned CN growth [Fig. l(c)], with la variation in CN diameter of 4.1% and 6.3% respectively, is achieved by lithographically defining the Ni thin film prior to growth. The shape of the structures could be varied from very straight nanotube-like to conical tip-like nanofibers by increasing the ratio of C2H2 in the gas flow. Due to the plasma decomposition of C2H2, amorphous carbon (a-C) is an undesirable byproduct which could coat the substrate during CN growth. Using a combination of depth profiled Auger electron spectroscopy to study the substrate and in-situ mass spectroscopy to examine gas phase neutrals and ions, the optimal conditions for a-C free growth of CN is determined.

Adsorbed Molecules and Surface Treatment Effect on Optical Properties of ZnO Nanowires Grown by MOCVD

NASA Astrophysics Data System (ADS)

Jabri, S.; Souissi, H.; Sallet, V.; Lusson, A.; Meftah, A.; Galtier, P.; Oueslati, M.

2017-07-01

We have investigated the optical properties of ZnO nanowires grown by metalorganic chemical vapor deposition (MOCVD) with nitrous oxide (N2O) as oxygen precursor. Photoluminescence (PL) and Raman measurements showed the influence of adsorbed molecules on the optical properties. Low-temperature (4 K) PL studies on the surface exciton (SX) at 3.3660 eV elucidated the nature and origin of this emission. In particular, surface treatment by annealing at high temperature under inert gas reduced the emission intensity of SX. Raman vibrational spectra proved that presence of a considerable amount of adsorbed molecules on the surface of ZnO nanowires plays a key role in the occurrence of surface excitons.

Transport mechanisms through PE-CVD coatings: influence of temperature, coating properties and defects on permeation of water vapour

NASA Astrophysics Data System (ADS)

Kirchheim, Dennis; Jaritz, Montgomery; Mitschker, Felix; Gebhard, Maximilian; Brochhagen, Markus; Hopmann, Christian; Böke, Marc; Devi, Anjana; Awakowicz, Peter; Dahlmann, Rainer

2017-03-01

Gas transport mechanisms through plastics are usually described by the temperature-dependent Arrhenius-model and compositions of several plastic layers are represented by the CLT. When it comes to thin films such as plasma-enhanced chemical vapour deposition (PE-CVD) or plasma-enhanced atomic layer deposition (PE-ALD) coatings on substrates of polymeric material, a universal model is lacking. While existing models describe diffusion through defects, these models presume that permeation does not occur by other means of transport mechanisms. This paper correlates the existing transport models with data from water vapour transmission experiments.

Chemical Vapour Deposition of Graphene with Re-useable Pt and Cu substrates for Flexible Electronics

NASA Astrophysics Data System (ADS)

Karamat, Shumaila; Sonusen, Selda; Celik, Umit; Uysalli, Yigit; Oral, Ahmet

2015-03-01

Graphene has gained the attention of scientific world due to its outstanding physical properties. The future demand of flexible electronics such as solar cells, light emitting diodes, photo-detectors and touch screen technology requires more exploration of graphene properties on flexible substrates. The most interesting application of graphene is in organic light emitting diodes (OLED) where efforts are in progress to replace brittle indium tin oxide (ITO) electrode with a flexible graphene electrode because ITO raw materials are becoming increasingly expensive, and its brittle nature makes it unsuitable for flexible devices. In this work, we grow graphene on Pt and Cu substrates using chemical vapour deposition (CVD) and transferred it to a polymer material (PVA) using lamination technique. We used hydrogen bubbling method for separating graphene from Pt and Cu catalyst to reuse the substrates many times. After successful transfer of graphene on polymer samples, we checked the resistivity values of the graphene sheet which varies with growth conditions. Furthermore, Raman, atomic force microscopy (AFM), I-V and Force-displacement measurements will be presented for these samples.

Modifying friction between ultra-high molecular weight polyethylene (UHMWPE) yarns with plasma enhanced chemical vapour deposition (PCVD)

NASA Astrophysics Data System (ADS)

Chu, Yanyan; Chen, Xiaogang; Tian, Lipeng

2017-06-01

Ultra-high molecular weight polyethylene (UHMWPE) yarns are widely used in military applications for protection owing to its high modulus and high strength; however, the friction between UHMWPE yarns is too small, which is a weakness for ballistic applications. The purpose of current research is to increase the friction between UHMWPE yarns by plasma enhanced chemical vapour deposition (PCVD). The changes of morphology and chemical structure were characterised by SEM and FTIR individually. The coefficients of friction between yarns were tested by means of Capstan method. Results from tests showed that the yarn-yarn coefficient of static friction (CSF) has been improved from 0.12 to 0.23 and that of kinetic friction (CSF) increased from 0.11 to 0.19, as the samples exposure from 21 s to 4 min. The more inter-yarn friction can be attributed to more and more particles and more polar groups deposited on the surfaces of yarns, including carboxyl, carbonyl, hydroxyl and amine groups and compounds containing silicon. The tensile strength and modulus of yarns, which are essential to ballistic performance, keep stable and are not affected by the treatments, indicating that PCVD treatment is an effective way to improve the inter-yarn friction without mechanical property degradation.

Progress in MOCVD growth of HgCdTe epilayers for HOT infrared detectors

NASA Astrophysics Data System (ADS)

Kebłowski, A.; Gawron, W.; Martyniuk, P.; Stepień, D.; Kolwas, K.; Piotrowski, J.; Madejczyk, P.; Kopytko, M.; Piotrowski, A.; Rogalski, A.

2016-05-01

In this paper we present progress in MOCVD growth of (100) HgCdTe epilayers achieved recently at the Institute of Applied Physics, Military University of Technology and Vigo System S.A. It is shown that MOCVD technology is an excellent tool in fabrication of different HgCdTe detector structures with a wide range of composition, donor/acceptor doping and without post grown annealing. Particular progress has been achieved in the growth of (100) HgCdTe epilayers for long wavelength infrared photoconductors operated in HOT conditions. The (100) HgCdTe photoconductor optimized for 13-μm attain detectivity equal to 6.5x109 Jones and therefore outperform its (111) counterpart. The paper also presents technological progress in fabrication of MOCVD-grown (111) HgCdTe barrier detectors. The barrier device performance is comparable with state-of-the-art of HgCdTe photodiodes. The detectivity of HgCdTe detectors is close to the value marked HgCdTe photodiodes. Dark current densities are close to the values given by "Rule 07".

MOCVD process technology for affordable, high-yield, high-performance MESFET structures. Phase 3: MIMIC

NASA Astrophysics Data System (ADS)

1993-01-01

Under the MIMIC Program, Spire has pursued improvements in the manufacturing of low cost, high quality gallium arsenide MOCVD wafers for advanced MIMIC FET applications. As a demonstration of such improvements, Spire was tasked to supply MOCVD wafers for comparison to MBE wafers in the fabrication of millimeter and microwave integrated circuits. In this, the final technical report for Spire's two-year MIMIC contract, we report the results of our work. The main objectives of Spire's MIMIC Phase 3 Program, as outlined in the Statement of Work, were as follows: Optimize the MOCVD growth conditions for the best possible electrical and morphological gallium arsenide. Optimization should include substrate and source qualification as well as determination of the optimum reactor growth conditions; Perform all work on 75 millimeter diameter wafers, using a reactor capable of at least three wafers per run; and Evaluate epitaxial layers using electrical, optical, and morphological tests to obtain thickness, carrier concentration, and mobility data across wafers.

Effects of boron addition on a-Si(90)Ge(10):H films obtained by low frequency plasma enhanced chemical vapour deposition.

PubMed

Pérez, Arllene M; Renero, Francisco J; Zúñiga, Carlos; Torres, Alfonso; Santiago, César

2005-06-29

Optical, structural and electric properties of (a-(Si(90)Ge(10))(1-y)B(y):H) thin film alloys, deposited by low frequency plasma enhanced chemical vapour deposition, are presented. The chemical bonding structure has been studied by IR spectroscopy, while the composition was investigated by Raman spectroscopy. A discussion about boron doping effects, in the composition and bonding of samples, is presented. Transport of carriers has been studied by measurement of the conductivity dependence on temperature, which increases from 10(-3) to 10(1) Ω(-1) cm(-1) when the boron content varies from 0 to 50%. Similarly, the activation energy is between 0.62 and 0.19 eV when the doping increases from 0 to 83%. The optical properties have been determined from the film's optical transmission, using Swanepoel's method. It is shown that the optical gap varies from 1.3 to 0.99 eV.

Crystallographic alignment of high-density gallium nitride nanowire arrays.

PubMed

Kuykendall, Tevye; Pauzauskie, Peter J; Zhang, Yanfeng; Goldberger, Joshua; Sirbuly, Donald; Denlinger, Jonathan; Yang, Peidong

2004-08-01

Single-crystalline, one-dimensional semiconductor nanostructures are considered to be one of the critical building blocks for nanoscale optoelectronics. Elucidation of the vapour-liquid-solid growth mechanism has already enabled precise control over nanowire position and size, yet to date, no reports have demonstrated the ability to choose from different crystallographic growth directions of a nanowire array. Control over the nanowire growth direction is extremely desirable, in that anisotropic parameters such as thermal and electrical conductivity, index of refraction, piezoelectric polarization, and bandgap may be used to tune the physical properties of nanowires made from a given material. Here we demonstrate the use of metal-organic chemical vapour deposition (MOCVD) and appropriate substrate selection to control the crystallographic growth directions of high-density arrays of gallium nitride nanowires with distinct geometric and physical properties. Epitaxial growth of wurtzite gallium nitride on (100) gamma-LiAlO(2) and (111) MgO single-crystal substrates resulted in the selective growth of nanowires in the orthogonal [1\\[Evec]0] and [001] directions, exhibiting triangular and hexagonal cross-sections and drastically different optical emission. The MOCVD process is entirely compatible with the current GaN thin-film technology, which would lead to easy scale-up and device integration.

Chemical etching and organometallic chemical vapor deposition on varied geometries of GaAs

NASA Technical Reports Server (NTRS)

Bailey, Sheila G.; Landis, Geoffrey A.; Wilt, David M.

1989-01-01

Results of micron-spaced geometries produced by wet chemical etching and subsequent OMCVD growth on various GaAs surfaces are presented. The polar lattice increases the complexity of the process. The slow-etch planes defined by anisotropic etching are not always the same as the growth facets produced during MOCVD deposition, especially for deposition on higher-order planes produced by the hex groove etching.

Applying a potential difference to minimise damage to carbon fibres during carbon nanotube grafting by chemical vapour deposition.

PubMed

Anthony, David B; Qian, Hui; Clancy, Adam J; Greenhalgh, Emile S; Bismarck, Alexander; Shaffer, Milo S P

2017-07-28

The application of an in situ potential difference between carbon fibres and a graphite foil counter electrode (300 V, generating an electric field ca 0.3-0.7 V μm -1 ), during the chemical vapour deposition synthesis of carbon nanotube (CNT) grafted carbon fibres, significantly improves the uniformity of growth without reducing the tensile properties of the underlying carbon fibres. Grafted CNTs with diameters 55 nm ± 36 nm and lengths around 10 μm were well attached to the carbon fibre surface, and were grown without the requirement for protective barrier coatings. The grafted CNTs increased the surface area to 185 m 2 g -1 compared to the as-received sized carbon fibre 0.24 m 2 g -1 . The approach is not restricted to batch systems and has the potential to improve CNT grafted carbon fibre production for continuous processing.

Applying a potential difference to minimise damage to carbon fibres during carbon nanotube grafting by chemical vapour deposition

NASA Astrophysics Data System (ADS)

Anthony, David B.; Qian, Hui; Clancy, Adam J.; Greenhalgh, Emile S.; Bismarck, Alexander; Shaffer, Milo S. P.

2017-07-01

The application of an in situ potential difference between carbon fibres and a graphite foil counter electrode (300 V, generating an electric field ca 0.3-0.7 V μm-1), during the chemical vapour deposition synthesis of carbon nanotube (CNT) grafted carbon fibres, significantly improves the uniformity of growth without reducing the tensile properties of the underlying carbon fibres. Grafted CNTs with diameters 55 nm ± 36 nm and lengths around 10 μm were well attached to the carbon fibre surface, and were grown without the requirement for protective barrier coatings. The grafted CNTs increased the surface area to 185 m2 g-1 compared to the as-received sized carbon fibre 0.24 m2 g-1. The approach is not restricted to batch systems and has the potential to improve CNT grafted carbon fibre production for continuous processing.

The Seasonal Cycle of Water Vapour on Mars from Assimilation of Thermal Emission Spectrometer Data

NASA Technical Reports Server (NTRS)

Steele, Liam J.; Lewis, Stephen R.; Patel, Manish R.; Montmessin, Franck; Forget, Francois; Smith, Michael D.

2014-01-01

We present for the first time an assimilation of Thermal Emission Spectrometer (TES) water vapour column data into a Mars global climate model (MGCM). We discuss the seasonal cycle of water vapour, the processes responsible for the observed water vapour distribution, and the cross-hemispheric water transport. The assimilation scheme is shown to be robust in producing consistent reanalyses, and the global water vapour column error is reduced to around 2-4 pr micron depending on season. Wave activity is shown to play an important role in the water vapour distribution, with topographically steered flows around the Hellas and Argyre basins acting to increase transport in these regions in all seasons. At high northern latitudes, zonal wavenumber 1 and 2 stationary waves during northern summer are responsible for spreading the sublimed water vapour away from the pole. Transport by the zonal wavenumber 2 waves occurs primarily to the west of Tharsis and Arabia Terra and, combined with the effects of western boundary currents, this leads to peak water vapour column abundances here as observed by numerous spacecraft. A net transport of water to the northern hemisphere over the course of one Mars year is calculated, primarily because of the large northwards flux of water vapour which occurs during the local dust storm around L(sub S) = 240-260deg. Finally, outlying frost deposits that surround the north polar cap are shown to be important in creating the peak water vapour column abundances observed during northern summer.

High-quality uniaxial In(x)Ga(1-x)N/GaN multiple quantum well (MQW) nanowires (NWs) on Si(111) grown by metal-organic chemical vapor deposition (MOCVD) and light-emitting diode (LED) fabrication.

PubMed

Ra, Yong-Ho; Navamathavan, R; Park, Ji-Hyeon; Lee, Cheul-Ro

2013-03-01

This article describes the growth and device characteristics of vertically aligned high-quality uniaxial p-GaN/InxGa1-xN/GaN multiple quantum wells (MQW)/n-GaN nanowires (NWs) on Si(111) substrates grown by metal-organic chemical vapor deposition (MOCVD) technique. The resultant nanowires (NWs), with a diameter of 200-250 nm, have an average length of 2 μm. The feasibility of growing high-quality NWs with well-controlled indium composition MQW structure is demonstrated. These resultant NWs grown on Si(111) substrates were utilized for fabricating vertical-type light-emitting diodes (LEDs). The steep and intense photoluminescence (PL) and cathodoluminescence (CL) spectra are observed, based on the strain-free NWs on Si(111) substrates. High-resolution transmission electron microscopy (HR-TEM) analysis revealed that the MQW NWs are grown along the c-plane with uniform thickness. The current-voltage (I-V) characteristics of these NWs exhibited typical p-n junction LEDs and showed a sharp onset voltage at 2.75 V in the forward bias. The output power is linearly increased with increasing current. The result indicates that the pulsed MOCVD technique is an effective method to grow uniaxial p-GaN/InxGa1-xN/GaN MQW/n-GaN NWs on Si(111), which is more advantageous than other growth techniques, such as molecular beam epitaxy. These results suggest the uniaxial NWs are promising to allow flat-band quantum structures, which can enhance the efficiency of LEDs.

Spectroscopic investigation of different concentrations of the vapour deposited copper phthalocyanine as a "guest" in polyimide matrix.

PubMed

Georgiev, Anton; Yordanov, Dancho; Dimov, Dean; Assa, Jacob; Spassova, Erinche; Danev, Gencho

2015-04-05

Nanocomposite layers 250 nm copper phthalocyanine/polyimide prepared by simultaneous vapour deposition of three different sources were studied. Different concentrations of copper phthalocyanine as a "guest" in polyimide matrix as a function of conditions of the preparation have been determined by FTIR (Fourier Transform Infrared) and UV-VIS (Ultraviolet-Visible) spectroscopies. The aim was to estimate the possibility of the spectroscopic methods for quantitative determination of the "guest" and compare with the quality of the polyimide thin films in relation to the "guest" concentration. The band at 1334 cm(-1) has been used for quantitative estimation of "guest" in polyimide matrix. The concentrations of the copper phthalocyanine less than 20% require curve fitting techniques with Fourier self deconvolution. The relationship between "guest" concentrations and degree of imidization, as well as the electronic UV-VIS spectra are discussed in relation to the composition, imidization degree and the two crystallographic modification of the embedded chromophore. Copyright © 2015 Elsevier B.V. All rights reserved.

Chemical vapour deposition: Transition metal carbides go 2D

DOE PAGES

Gogotsi, Yury

2015-08-17

Here, the research community has been steadily expanding the family of few-atom-thick crystals beyond graphene, discovering new materials or producing known materials in a 2D state and demonstrating their unique properties 1, 2. Recently, nanometre-thin 2D transition metal carbides have also joined this family 3. Writing in Nature Materials, Chuan Xu and colleagues now report a significant advance in the field, showing the synthesis of large-area, high-quality, nanometre-thin crystals of molybdenum carbide that demonstrate low-temperature 2D superconductivity 4. Moreover, they also show that other ultrathin carbide crystals, such as tungsten and tantalum carbides, can be grown by chemical vapour depositionmore » with a high crystallinity and very low defect concentration.« less

The controlled growth of GaN microrods on Si(111) substrates by MOCVD

NASA Astrophysics Data System (ADS)

Foltynski, Bartosz; Garro, Nuria; Vallo, Martin; Finken, Matthias; Giesen, Christoph; Kalisch, Holger; Vescan, Andrei; Cantarero, Andrés; Heuken, Michael

2015-03-01

In this paper, a selective area growth (SAG) approach for growing GaN microrods on patterned SiNx/Si(111) substrates by metal-organic chemical vapor deposition (MOCVD) is studied. The surface morphology, optical and structural properties of vertical GaN microrods terminated by pyramidal shaped facets (six { 10 1 bar 1} planes) were characterized using scanning electron microscopy (SEM), room temperature photoluminescence (PL) and Raman spectroscopy, respectively. Measurements revealed high-quality GaN microcolumns grown with silane support. Characterized structures were grown nearly strain-free (central frequency of Raman peak of 567±1 cm-1) with crystal quality comparable to bulk crystals (FWHM=4.2±1 cm-1). Such GaN microrods might be used as a next-generation device concept for solid-state lighting (SSL) applications by realizing core-shell InGaN/GaN multi-quantum wells (MQWs) on the n-GaN rod base.

Heterostructures of metamorphic GaInAs photovoltaic converters fabricated by MOCVD on GaAs substrates

DOE Office of Scientific and Technical Information (OSTI.GOV)

Mintairov, S. A., E-mail: mintairov@scell.ioffe.ru; Emelyanov, V. M.; Rybalchenko, D. V.

Heterostructures of metamorphic GaInAs photovoltaic converters (PVCs) are on GaAs substrates by the metal-organic chemical vapor deposition (MOCVD) method. It is shown that using a multilayer metamorphic buffer with a step of 2.5% in indium content and layer thicknesses of 120 nm provides the high quality of bulk layers subsequently grown on the buffer up to an indium content of 24%. PVCs with a long-wavelength photosensitivity edge up to 1300 nm and a quantum efficiency of ~80% in the spectral range 1050–1100 nm are fabricated. Analysis of the open-circuit voltage of the PVCs and diffusion lengths of minority carriers inmore » the layers demonstrates that the density of misfit dislocations penetrating into the bulk layers increases at an indium content exceeding 10%.« less

Metal organic chemical vapor deposition of environmental barrier coatings for the inhibition of solid deposit formation from heated jet fuel

NASA Astrophysics Data System (ADS)

Mohan, Arun Ram

Solid deposit formation from jet fuel compromises the fuel handling system of an aviation turbine engine and increases the maintenance downtime of an aircraft. The deposit formation process depends upon the composition of the fuel, the nature of metal surfaces that come in contact with the heated fuel and the operating conditions of the engine. The objective of the study is to investigate the effect of substrate surfaces on the amount and nature of solid deposits in the intermediate regime where both autoxidation and pyrolysis play an important role in deposit formation. A particular focus has been directed to examining the effectiveness of barrier coatings produced by metal organic chemical vapor deposition (MOCVD) on metal surfaces for inhibiting the solid deposit formation from jet fuel degradation. In the first part of the experimental study, a commercial Jet-A sample was stressed in a flow reactor on seven different metal surfaces: AISI316, AISI 321, AISI 304, AISI 347, Inconel 600, Inconel 718, Inconel 750X and FecrAlloy. Examination of deposits by thermal and microscopic analysis shows that the solid deposit formation is influenced by the interaction of organosulfur compounds and autoxidation products with the metal surfaces. The nature of metal sulfides was predicted by Fe-Ni-S ternary phase diagram. Thermal stressing on uncoated surfaces produced coke deposits with varying degree of structural order. They are hydrogen-rich and structurally disordered deposits, spherulitic deposits, small carbon particles with relatively ordered structures and large platelets of ordered carbon structures formed by metal catalysis. In the second part of the study, environmental barrier coatings were deposited on tube surfaces to inhibit solid deposit formation from the heated fuel. A new CVD system was configured by the proper choice of components for mass flow, pressure and temperature control in the reactor. A bubbler was designed to deliver the precursor into the reactor

Advanced light-scattering materials: Double-textured ZnO:B films grown by LP-MOCVD

NASA Astrophysics Data System (ADS)

Addonizio, M. L.; Spadoni, A.; Antonaia, A.

2013-12-01

Double-textured ZnO:B layers with enhanced optical scattering in both short and long wavelength regions have been successfully fabricated using MOCVD technique through a three step process. Growth of double-textured structures has been induced by wet etching on polycrystalline ZnO surface. Our double-layer structure consists of a first ZnO:B layer wet etched and subsequently used as substrate for a second ZnO:B layer deposition. Polycrystalline ZnO:B layers were etched by utilizing diluted solutions of fluoridic acid (HF), chloridric acid (HCl) and phosphoric acid (H3PO4) and their effect on surface morphology modification was systematically investigated. The morphology of the second deposited ZnO layer strongly depended on the surface properties of the etched ZnO first layer. Growth of cauliflower-like texture was induced by protrusions presence on the HCl etched surface. Optimized double-layer structure shows a cauliflower-like double texture with higher RMS roughness and increased spectral haze values in both short and long wavelength regions, compared to conventional pyramidal-like single texture. Furthermore, this highly scattering structure preserves excellent optical and electrical properties.

Microstructure Characteristics of High Lift Factor MOCVD REBCO Coated Conductors With High Zr Content

DOE Office of Scientific and Technical Information (OSTI.GOV)

Galstyan, E; Gharahcheshmeh, MH; Delgado, L

We report the microstructural characteristics of high levels of Zr-added REBa2Cu3O7-x (RE = Gd, Y rare earth) coated conductors fabricated by Metal Organic Chemical Vapor Deposition (MOCVD). The enhancements of the lift factor defined as a ratio of the in-field (3 T, B parallel to c-axis) critical current density (J(c)) at 30 K and self-field J(c) at 77 K have been achieved for Zr addition levels of 20 and 25 mol% via optimization of deposition parameters. The presence of strong flux pinning is attributed to the aligned nanocolumns of BaZrO3 and nanoprecipitates embedded in REBa2Cu3O7-x matrix with good crystal quality.more » A high density of BZO nanorods with a typical size 6-8 nm and spacing of 20 nm has been observed. Moreover, the high Zr content was found to induce a high density of intrinsic defects, including stacking faults and dislocations. The correlation between in-field performance along the c-axis and microstructure of (Gd, Y) BCO film with a high level of Zr addition is discussed.« less

Point defect reduction in MOCVD (Al)GaN by chemical potential control and a comprehensive model of C incorporation in GaN

NASA Astrophysics Data System (ADS)

Reddy, Pramod; Washiyama, Shun; Kaess, Felix; Kirste, Ronny; Mita, Seiji; Collazo, Ramon; Sitar, Zlatko

2017-12-01

A theoretical framework that provides a quantitative relationship between point defect formation energies and growth process parameters is presented. It enables systematic point defect reduction by chemical potential control in metalorganic chemical vapor deposition (MOCVD) of III-nitrides. Experimental corroboration is provided by a case study of C incorporation in GaN. The theoretical model is shown to be successful in providing quantitative predictions of CN defect incorporation in GaN as a function of growth parameters and provides valuable insights into boundary phases and other impurity chemical reactions. The metal supersaturation is found to be the primary factor in determining the chemical potential of III/N and consequently incorporation or formation of point defects which involves exchange of III or N atoms with the reservoir. The framework is general and may be extended to other defect systems in (Al)GaN. The utility of equilibrium formalism typically employed in density functional theory in predicting defect incorporation in non-equilibrium and high temperature MOCVD growth is confirmed. Furthermore, the proposed theoretical framework may be used to determine optimal growth conditions to achieve minimum compensation within any given constraints such as growth rate, crystal quality, and other practical system limitations.

Temporal Stability of Metal-Chloride-Doped Chemical-Vapour-Deposited Graphene.

PubMed

Kang, Moon H; Milne, William I; Cole, Matthew T

2016-08-18

Graphene has proven to be a promising material for transparent flexible electronics. In this study, we report the development of a transfer and doping scheme of large-area chemical vapour deposited (CVD) graphene. A technique to transfer the as-grown material onto mechanically flexible and optically transparent polymeric substrates using an ultraviolet adhesive (UVA) is outlined, along with the temporal stability of the sheet resistance and optical transparency following chemical doping with various metal chlorides (Mx Cly The sheet resistance (RS ) and 550 nm optical transparency (%T550 ) of the transferred un-doped graphene was 3.5 kΩ sq(-1) (±0.2 kΩ sq(-1) ) and 84.1 % (±2.9 %), respectively. Doping with AuCl3 showed a notable reduction in RS by some 71.4 % (to 0.93 kΩ sq(-1) ) with a corresponding %T550 of 77.0 %. After 200 h exposure to air at standard temperature and pressure, the increase in RS was found to be negligible (ΔRS AuCl3 =0.06 kΩ sq(-1) ), indicating that, of the considered Mx Cly species, AuCl3 doping offered the highest degree of time stability under ambient conditions. There appears a tendency of increasing RS with time for the remaining metal chlorides studied. We attribute the observed temporal shift to desorption of molecular dopants. We find that desorption was most significant in RhCl3 -doped samples whereas, in contrast, after 200 h in ambient conditions, AuCl3 -doped graphene showed only marginal desorption. The results of this study demonstrate that chemical doping of UVA-transferred graphene is a promising means for enhancing large-area CVD graphene in order to realise a viable platform for next-generation optically transparent and mechanically flexible electronics. © 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

3D imaging of vapour and liquid inclusions from the Mole Granite, Australia, using helical fluorescence tomography

NASA Astrophysics Data System (ADS)

Cauzid, J.; Philippot, P.; Bleuet, P.; Simionovici, A.; Somogyi, A.; Golosio, B.

2007-08-01

World class Cu resources are concentrated in porphyry and epithermal ore deposits. Their formation remains partially understood, however, due to a lack of constraints on the partitioning properties of trace elements in general, and Cu in particular, between vapour and liquid phases evolved from boiling fluids at depth in the Earth's crust. Immiscible liquid and vapour fluid inclusions coexisting in a single quartz grain have been imaged in three dimensions by X-ray Fluorescence Computed Tomography (XFCT). Elemental spatial distributions confirm that Cu, and to a lesser extent As, partition into the vapour phase, whereas Mn, Fe, Zn, Br, Rb, Sr and Pb concentrate in the liquid inclusion. High resolution mapping of the vapour inclusions revealed that Cu is heterogeneously distributed at the scale of a single inclusion and is mostly concentrated as tiny daughter crystals.

Modeling of InP metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Black, Linda R.; Clark, Ivan O.; Kui, J.; Jesser, William A.

1991-01-01

The growth of InP by metalorganic chemical vapor deposition (MOCVD) in a horizontal reactor is being modeled with a commercially available computational fluid dynamics modeling code. The mathematical treatment of the MOCVD process has four primary areas of concern: 1) transport phenomena, 2) chemistry, 3) boundary conditions, and 4) numerical solution methods. The transport processes involved in CVD are described by conservation of total mass, momentum, energy, and atomic species. Momentum conservation is described by a generalized form of the Navier-Stokes equation for a Newtonian fluid and laminar flow. The effect of Soret diffusion on the transport of particular chemical species and on the predicted deposition rate is examined. Both gas-phase and surface chemical reactions are employed in the model. Boundary conditions are specified at the inlet and walls of the reactor for temperature, fluid flow and chemical species. The coupled set of equations described above is solved by a finite difference method over a nonuniform rectilinear grid in both two and three dimensions. The results of the 2-D computational model is presented for gravity levels of zero- and one-g. The predicted growth rates at one-g are compared to measured growth rates on fused silica substrates.

Low-temperature synthesis and characterization of helical carbon fibers by one-step chemical vapour deposition

NASA Astrophysics Data System (ADS)

Jin, Yongzhong; Chen, Jian; Fu, Qingshan; Li, Binghong; Zhang, Huazhi; Gong, Yong

2015-01-01

Helical carbon fibers (HCNFs) were synthesized by one-step chemical vapour deposition using cupric tartrate as a catalyst at temperature below 500 °C. The bound rubber of natural rubber (NR)/HCNFs were also prepared in this study. The results of thermogravimetry-differential scanning calorimetry (TG/DSC) for cupric tartrate nanoparticles show that the transformation of C4H4CuO6 → Cu reaction occurs at ∼250-310 °C. The characterization of scanning electron microscopy (SEM), transmission electron microscope (TEM), X-ray diffraction (XRD) and Raman spectrum for the synthesized products confirms that the synthesis of HCNFs is highly temperature-dependent. The straight fibers with the fiber diameter of 100-400 nm are obtained at 280 °C and HCNFs can be synthesized at higher temperature, with the coil diameter of 0.5-1 μm and fiber diameter of 100-200 nm at 380 °C, and the coil diameter of ∼100 nm and fiber diameter of ∼80 nm at 480 °C. The maximum of the bound-rubber content (37%) can be obtained with the addition of 100 wt.% HCNFs in NR, which indicates that the coiled configuration of HCNFs makes a noticeable contribution to the reinforcement of NR/CB system.

Optical and Structural Properties of Microcrystalline GaN on an Amorphous Substrate Prepared by a Combination of Molecular Beam Epitaxy and Metal-Organic Chemical Vapor Deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Min, Jung-Wook; Hwang, Hyeong-Yong; Kang, Eun-Kyu

2016-05-01

Microscale platelet-shaped GaN grains were grown on amorphous substrates by a combined epitaxial growth method of molecular beam epitaxy (MBE) and metal-organic chemical vapor deposition (MOCVD). First, MBE GaN was grown on an amorphous substrate as a pre-orienting layer and its structural properties were investigated. Second, MOCVD grown GaN samples using the different growth techniques of planar and selective area growth (SAG) were comparatively investigated by transmission electron microscopy (TEM), cathodoluminescence (CL), and photoluminescence (PL). In MOCVD planar GaN, strong bound exciton peaks dominated despite the high density of the threading dislocations (TDs). In MOCVD SAG GaN, on the othermore » hand, TDs were clearly reduced with bending, but basal stacking fault (BSF) PL peaks were observed at 3.42 eV. The combined epitaxial method not only provides a deep understanding of the growth behavior but also suggests an alternative approach for the growth of GaN on amorphous substances.« less

Synthesis of ultrathin polymer insulating layers by initiated chemical vapour deposition for low-power soft electronics.

PubMed

Moon, Hanul; Seong, Hyejeong; Shin, Woo Cheol; Park, Won-Tae; Kim, Mincheol; Lee, Seungwon; Bong, Jae Hoon; Noh, Yong-Young; Cho, Byung Jin; Yoo, Seunghyup; Im, Sung Gap

2015-06-01

Insulating layers based on oxides and nitrides provide high capacitance, low leakage, high breakdown field and resistance to electrical stresses when used in electronic devices based on rigid substrates. However, their typically high process temperatures and brittleness make it difficult to achieve similar performance in flexible or organic electronics. Here, we show that poly(1,3,5-trimethyl-1,3,5-trivinyl cyclotrisiloxane) (pV3D3) prepared via a one-step, solvent-free technique called initiated chemical vapour deposition (iCVD) is a versatile polymeric insulating layer that meets a wide range of requirements for next-generation electronic devices. Highly uniform and pure ultrathin films of pV3D3 with excellent insulating properties, a large energy gap (>8 eV), tunnelling-limited leakage characteristics and resistance to a tensile strain of up to 4% are demonstrated. The low process temperature, surface-growth character, and solvent-free nature of the iCVD process enable pV3D3 to be grown conformally on plastic substrates to yield flexible field-effect transistors as well as on a variety of channel layers, including organics, oxides, and graphene.

Effect of annealing time and NH3 flow on GaN films deposited on amorphous SiO2 by MOCVD

NASA Astrophysics Data System (ADS)

Li, Tianbao; Liu, Chenyang; Zhang, Zhe; Yu, Bin; Dong, Hailiang; Jia, Wei; Jia, Zhigang; Yu, Chunyan; Xu, Bingshe

2018-05-01

GaN polycrystalline films were successfully grown on amorphous SiO2 by metal-organic chemical vapour deposition to fabricate transferable devices using inorganic films. Field-emission scanning electron microscopy images show that by prolonging the annealing time, re-evaporation is enhanced, which reduced the uniformity of the nucleation layer and GaN films. X-ray diffraction patterns indicate that the decomposition rate of the nucleation layer increases when the annealing flow rate of NH3 is 500 sccm, which makes the unstable plane and amorphous domains decompose rapidly, thereby improving the crystallinity of the GaN films. Photoluminescence spectra also indicate the presence of fewer defects when the annealing flow rate of NH3 is 500 sccm. The excellent crystal structure of the GaN films grown under optimized conditions was revealed by transmission electron microscopy analysis. More importantly, the crystal structure and orientation of GaN grown on SiO2 are the same as that of GaN grown on conventional sapphire substrate when a buffer layer is used. This work can aid in the development of transferable devices using GaN films.

Magnesium doping of efficient GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Lewis, C. R.; Ford, C. W.; Werthen, J. G.

1984-01-01

Magnesium has been substituted for zinc in GaAs and Ga(0.75)In(0.25)As solar cells grown by metalorganic chemical vapor deposition (MOCVD). Bis(cyclopentadienyl)magnesium (Cp2Mg) is used as the MOCVD transport agent for Mg. Full retention of excellent material quality and efficient cell performance results. The substitution of Mg for Zn would enhance the abruptness and reproducibility of doping profiles, and facilitate high temperature processing and operation, due to the much lower diffusion coefficient of Mg, relative to Zn, in these materials.

The ESA DUE GlobVapour Project

NASA Astrophysics Data System (ADS)

Schröder, M.; ESA Due Globvapour Project Team

2010-12-01

The European Space Agency (ESA) Data User Element (DUE) project series aims at bridging the gap between research projects and the sustainable provision of Earth Observation (EO) climate data products at an information level that fully responds to the operational needs of user communities. The ultimate objective of GlobVapour is to provide long-term coherent water vapour data sets exploiting the synergistic capabilities of different EO missions aiming at improved accuracies and enhanced temporal and spatial sampling better than those provided by the single sources. The project seeks to utilize the increasing potential of the synergistic capabilities of past, existing and upcoming satellite missions (ERS-1 and -2, ENVISAT, METOP, MSG as well as relevant non-European missions and in-situ data) in order to meet the increasing needs for coherent long-term water vapour datasets required by the scientific community. GlobVapour develops, validates and applies novel water vapour climate data sets derived from various sensors. More specifically, the primary objectives of the GlobVapour project are: 1)The development of multi-annual global water vapour data sets inclusive of error estimates based on carefully calibrated and inter-calibrated radiances. 2)The validation of the water vapour products against ground based, airborne and other satellite based measurements. 3) The provision of an assessment of the quality of different IASI water vapour profile algorithms developed by the project partners and other groups. 4) The provision of a complete processing system that can further strengthen operational production of the developed products. 5) A demonstration of the use of the products in the field of climate modelling, including applying alternative ways of climate model validation using forward radiation operators. 6) The promotion of the strategy of data set construction and the data sets themselves to the global research and operational community. The ultimate goal of the

Method for Improving Mg Doping During Group-III Nitride MOCVD

DOEpatents

Creighton, J. Randall; Wang, George T.

2008-11-11

A method for improving Mg doping of Group III-N materials grown by MOCVD preventing condensation in the gas phase or on reactor surfaces of adducts of magnesocene and ammonia by suitably heating reactor surfaces between the location of mixing of the magnesocene and ammonia reactants and the Group III-nitride surface whereon growth is to occur.

Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

1990-01-01

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, wherein a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd.sub.1-x Mn.sub.x Te, wherein 0.ltoreq..times..ltoreq.0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) maganese (TCPMn) is employed. To prevent TCPMn condensation during the introduction thereof int the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, wherein the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

Multilayer graphene growth on polar dielectric substrates using chemical vapour deposition

NASA Astrophysics Data System (ADS)

Karamat, S.; Çelik, K.; Shah Zaman, S.; Oral, A.

2018-06-01

High quality of graphene is necessary for its applications at industrial scale production. The most convenient way is its direct growth on dielectrics which avoid the transfer route of graphene from metal to dielectric substrate usually followed by graphene community. The choice of a suitable dielectric for the gate material which can replace silicon dioxide (SiO2) is in high demand. Various properties like permittivity, thermodynamic stability, film morphology, interface quality, bandgap and band alignment of other dielectrics with graphene needs more exploration. A potential dielectric material is required which could be used to grow graphene with all these qualities. Direct growth of graphene on magnesium oxide (MgO) substrates is an interesting idea and will be a new addition in the library of 2D materials. The present work is about the direct growth of graphene on MgO substrates by an ambient pressure chemical vapour deposition (CVD) method. We address the surface instability issue of the polar oxides which is the most challenging factor in MgO. Atomic force microscopy (AFM) measurements showed the topographical features of the graphene coated on MgO. X-ray photoelectron spectroscopy (XPS) study is carried out to extract information regarding the presence of necessary elements, their bonding with substrates and to confirm the sp-2 hybridization of carbon, which is a characteristic feature of graphene film. The chemical shift is due to the surface reconstruction of MgO in the prepared samples. For graphene-MgO interface, valence band offset (VBO) and conduction band offset (CBO) extracted from valence band spectra reported. Further, we predicted the energy band diagram for single layer and thin film of graphene. By using the room-temperature energy band gap values of MgO and graphene, the CBO is calculated to be 6.85 eV for single layer and 5.66 eV for few layer (1-3) of graphene layers.

Preparation of SmBCO layer for the surface optimization of GdYBCO film by MOCVD process based on a simple self-heating technology

NASA Astrophysics Data System (ADS)

Zhao, Ruipeng; Zhang, Fei; Liu, Qing; Xia, Yudong; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

2018-07-01

The MOCVD process was adopted to grow the REBa2Cu3O7-δ ((REBCO), RE = rare earth elements) films on the LaMnO3 (LMO) templates. Meanwhile, the LMO-template tapes are heated by the joule effect after applying a heating current through the Hastelloy metal substrates. The surface of GdYBCO films prepared by MOCVD method is prone to form outgrowths. So the surface morphology of GdYBCO film is optimized by depositing the SmBCO layer, which is an important process method for the preparation of high-quality multilayer REBCO films. At last, the GdYBCO/SmBCO/GdYBCO multilayer films were successfully prepared on the LMO templates based on the simple self-heating method. It is demonstrated that the GdYBCO surface was well improved by the characterization analysis of scanning electron microscope. And the Δω of REBCO (005) and Δφ of REBCO (103), which were performed by an X-ray diffraction system, are respectively 1.3° and 3.3° What's more, the critical current density (Jc) has been more than 3 MA/cm2 (77 K, 0 T) and the critical current (Ic) basically shows a trend of good linear increase with the increase of the number of REBCO layers.

Synthesis of carbon nanostructures from high density polyethylene (HDPE) and polyethylene terephthalate (PET) waste by chemical vapour deposition

NASA Astrophysics Data System (ADS)

Hatta, M. N. M.; Hashim, M. S.; Hussin, R.; Aida, S.; Kamdi, Z.; Ainuddin, AR; Yunos, MZ

2017-10-01

In this study, carbon nanostructures were synthesized from High Density Polyethylene (HDPE) and Polyethylene terephthalate (PET) waste by single-stage chemical vapour deposition (CVD) method. In CVD, iron was used as catalyst and pyrolitic of carbon source was conducted at temperature 700, 800 and 900°C for 30 minutes. Argon gas was used as carrier gas with flow at 90 sccm. The synthesized carbon nanostructures were characterized by FESEM, EDS and calculation of carbon yield (%). FESEM micrograph shows that the carbon nanostructures were only grown as nanofilament when synthesized from PET waste. The synthesization of carbon nanostructure at 700°C was produced smooth and the smallest diameter nanofilament compared to others. The carbon yield of synthesized carbon nanostructures from PET was lower from HDPE. Furthermore, the carbon yield is recorded to increase with increasing of reaction temperature for all samples. Elemental study by EDS analysis were carried out and the formation of carbon nanostructures was confirmed after CVD process. Utilization of polymer waste to produce carbon nanostructures is beneficial to ensure that the carbon nanotechnology will be sustained in future.

MOCVD growth and characterization of gallium nitride and gallium antimonide nanowires

NASA Astrophysics Data System (ADS)

Burke, Robert Alan

Group-III nitride and group-III antimonide thin films have been used for years in optoelectronic, high-speed applications, and high power/high temperature applications such as light emitting diodes (LEDs), microwave power devices, and thermovoltaics. In recent years, nanowires have gained interest due to the ability to take advantage of their geometry for increased light absorption and the synthesis of radial heterostructures. Several growth techniques have been explored for the growth of GaN and GaSb nanowires. Metal-organic chemical vapor deposition (MOCVD) is of particular interest due to its use in the commercial growth and fabrication of GaN-based and GaSb-based devices. The first part of this thesis focused on addressing several key issues related to the growth of GaN nanowires by MOCVD. Preliminary studies investigated the effect of growth conditions on GaN nanowire formation in a hot wall MOCVD reactor. A computational fluid dynamics-based model was developed to predict the gas phase velocity, temperature and concentration profiles in the reactor. The results demonstrate a strong dependence of GaN nanowire growth on substrate position within the reactor which is due to the rapid reaction and depletion of precursors near the gas inlet of the reactor. Ni-catalyzed GaN nanowire growth was observed to occur over the temperature range of 800-900°C, which is significantly lower than typical GaN thin film temperatures. The nanowires, however, exhibited a tapered diameter due to thin film deposition which occurred simultaneously with nanowire growth. Based on the low growth temperatures, TEM characterization was carried out to investigate the nature of the catalyst. Through these studies, the catalyst was found to consist of Ni3Ga, indicating the presence of a vapor-solid-solid growth mechanism. In an attempt to improve the nanowire growth selectivity, GeCl4 was added during growth resulting in a drastic increase in nanowire density and a reduction in the tapering

Fast growth rate of epitaxial β-Ga2O3 by close coupled showerhead MOCVD

NASA Astrophysics Data System (ADS)

Alema, Fikadu; Hertog, Brian; Osinsky, Andrei; Mukhopadhyay, Partha; Toporkov, Mykyta; Schoenfeld, Winston V.

2017-10-01

We report on the growth of epitaxial β-Ga2O3 thin films on c-plane sapphire substrates using a close coupled showerhead MOCVD reactor. Ga(DPM)3 (DPM = dipivaloylmethanate), triethylgallium (TEGa) and trimethylgallium (TMGa) metal organic (MO) precursors were used as Ga sources and molecular oxygen was used for oxidation. Films grown from each of the Ga sources had high growth rates, with up to 10 μm/hr achieved using a TMGa precursor at a substrate temperature of 900 °C. As confirmed by X-ray diffraction, the films grown from each of the Ga sources were the monoclinic (2 bar 0 1) oriented β-Ga2O3 phase. The optical bandgap of the films was also estimated to be ∼4.9 eV. The fast growth rate of β-Ga2O3 thin films obtained using various Ga-precursors has been achieved due to the close couple showerhead design of the MOCVD reactor as well as the separate injection of oxygen and MO precursors, preventing the premature oxidation of the MO sources. These results suggest a pathway to overcoming the long-standing challenge of realizing fast growth rates for Ga2O3 using the MOCVD method.

Growth of a New Ternary BON Crystal on Si(100) by Plasma-Assisted MOCVD and Study on the Effects of Fed Gas and Growth Temperature

NASA Astrophysics Data System (ADS)

Chen, G. C.; Lee, S.-B.; Boo, J.-H.

A new ternary BOxNy crystal was grown on Si(100) substrate at 500°C by low-frequency (100 kHz) radio-frequency (rf) derived plasma-assisted MOCVD with an organoborate precursor. The as-grown deposits were characterized by SEM, TED, XPS, XRD, AFM and FT-IR. The experimental results showed that BOxNy crystal was apt to be formed at N-rich atmosphere and high temperature. The decrease of hydrogen flux in fed gases was of benefit to form BON crystal structure. The crystal structure of BOxNy was as similar to that of H3BO3 in this study.

Room temperature electroluminescence from the n-ZnO/p-GaN heterojunction device grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Yang, T.P.; Zhu, H.C.; Bian, J.M.

2008-12-01

The heterojunction light-emitting diode with n-ZnO/p-GaN structure was grown on (0 0 0 1) sapphire substrate by metalorganic chemical vapor deposition (MOCVD) technique. The heterojunction structure was consisted of an Mg-doped p-type GaN layer with a hole concentration of {approx}10{sup 17} cm{sup -3} and a unintentionally doped n-type ZnO layer with an electron concentration of {approx}10{sup 18} cm{sup -3}. A distinct blue-violet electroluminescence with a dominant emission peak centered at {approx}415 nm was observed at room temperature from the heterojunction structure under forward bias conditions. The origins of the electroluminescence (EL) emissions are discussed in comparison with the photoluminescence spectra,more » and it was supposed to be attributed to a radiative recombination in both n-ZnO and p-GaN sides.« less

Aluminum Coating Influence on Nitride Layer Performance Deposited by MO-CVD in Fluidized Bed on Austenitic Stainless Steel Substrate

NASA Astrophysics Data System (ADS)

Găluşcă, D. G.; Perju, M. C.; Nejneru, C.; Burduhos Nergiş, D. D.; Lăzărescu, I. E.

2018-06-01

The modification of surface properties by duplex treatments, involving the overlapping of two surface treatment techniques, has been established as an intelligent solution to create new applications for the substrate metallic material. There are driveline components operating under very tough wear and corrosion conditions, with high temperature and humidity variations. Such components are usually made of high Cr and Ni stainless steel and for the hardening of surfaces it is recommended a thermo chemical treatment. Since stainless steels, especially austenitic stainless steels, are difficult to nitride, experimental studies focus on increasing the depth of the nitride layer and surface hardness. Achieving the goal involves changing active layer chemical composition by introducing aluminum in the surface layer. In order to find a solution, a new surface treatment technique is produced by combining aluminum thin films by MO-CVD in a fluidized bed using a triisobutylaluminum precursor with a thermo chemical nitriding treatment.

Multi-Aperture Shower Design for the Improvement of the Transverse Uniformity of MOCVD-Derived GdYBCO Films

PubMed Central

Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Zhang, Fei; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

2017-01-01

A multi-aperture shower design is reported to improve the transverse uniformity of GdYBCO superconducting films on the template of sputtered-LaMnO3/epitaxial-MgO/IBAD-MgO/solution deposition planarization (SDP)-Y2O3-buffered Hastelloy tapes. The GdYBCO films were prepared by the metal organic chemical vapor deposition (MOCVD) process. The transverse uniformities of structure, morphology, thickness, and performance were characterized by X-ray diffraction (XRD), scanning electron microscopy (SEM), step profiler, and the standard four-probe method using the criteria of 1 μV/cm, respectively. Through adopting the multi-aperture shower instead of the slit shower, measurement by step profiler revealed that the thickness difference between the middle and the edges based on the slit shower design was well eliminated. Characterization by SEM showed that a GdYBCO film with a smooth surface was successfully prepared. Moreover, the transport critical current density (Jc) of its middle and edge positions at 77 K and self-field were found to be over 5 MA/cm2 through adopting the micro-bridge four-probe method. PMID:28914793

Vapour Intrusion into Buildings - A Literature Review

EPA Science Inventory

This chapter provides a review of recent research on vapour intrusion of volatile organic compounds (VOCs) into buildings. The chapter builds on a report from Tillman and Weaver (2005) which reviewed the literature on vapour intrusion through 2005. Firstly, the term ‘vapour intru...

The Chemical Vapor Deposition of Thin Metal Oxide Films

NASA Astrophysics Data System (ADS)

Laurie, Angus Buchanan

1990-01-01

Chemical vapor deposition (CVD) is an important method of preparing thin films of materials. Copper (II) oxide is an important p-type semiconductor and a major component of high T_{rm c} superconducting oxides. By using a volatile copper (II) chelate precursor, copper (II) bishexafluoroacetylacetonate, it has been possible to prepare thin films of copper (II) oxide by low temperature normal pressure metalorganic chemical vapor deposition. In the metalorganic CVD (MOCVD) production of oxide thin films, oxygen gas saturated with water vapor has been used mainly to reduce residual carbon and fluorine content. This research has investigated the influence of water-saturated oxygen on the morphology of thin films of CuO produced by low temperature chemical vapor deposition onto quartz, magnesium oxide and cubic zirconia substrates. ZnO is a useful n-type semiconductor material and is commonly prepared by the MOCVD method using organometallic precursors such as dimethyl or diethylzinc. These compounds are difficult to handle under atmospheric conditions. In this research, thin polycrystalline films of zinc oxide were grown on a variety of substrates by normal pressure CVD using a zinc chelate complex with zinc(II) bishexafluoroacetylacetonate dihydrate (Zn(hfa)_2.2H _2O) as the zinc source. Zn(hfa) _2.2H_2O is not moisture - or air-sensitive and is thus more easily handled. By operating under reduced-pressure conditions (20-500 torr) it is possible to substantially reduce deposition times and improve film quality. This research has investigated the reduced-pressure CVD of thin films of CuO and ZnO. Sub-micron films of tin(IV) oxide (SnO _2) have been grown by normal pressure CVD on quartz substrates by using tetraphenyltin (TPT) as the source of tin. All CVD films were characterized by X-ray powder diffraction (XRPD), scanning electron microscopy (SEM) and electron probe microanalysis (EPMA).

High utilization ratio of metal organic sources for MOCVD-derived GdYBCO films based on a narrow channel reaction chamber

NASA Astrophysics Data System (ADS)

Zhao, Ruipeng; Liu, Qing; Xia, Yudong; Tang, Hao; Lu, Yuming; Cai, Chuanbing; Tao, Bowan; Li, Yanrong

2018-01-01

A narrow channel reaction chamber is designed in our home-made MOCVD system and applied to deposit GdYBCO films on the template of LaMnO3/epitaxial MgO/IBAD-MgO/solution deposition planarization-Y2O3-buffered Hastelloy tapes. In the reaction chamber, metal organic sources are transferred from the inlet to the outlet along the direction of the tape movement. Thus, compared to the vertical injection way of metal organic sources, the residence time of metal organic sources on the surface of substrates would be extended through adopting the novel reaction chamber. Therefore, the utilization of metal organic sources, which is calculated according to the measured results of experiments, can reach 31%. Additionally, the utilization ratio of metal organic sources based on the novel reaction chamber is basically two times as much as that of the commonly used vertical injection slit shower. What is more, through adjusting the process, the critical current density of 300 nm thick GdYBCO film prepared the reel-to-reel way has reached 3.2 MA cm-2 (77 K, 0 T).

Chemical vapor deposition of yttria-stabilized zirconia as a thermal barrier coating for gas turbine engines

NASA Astrophysics Data System (ADS)

Varanasi, Venu Gopal

The gas turbine engine uses an yttria-stabilized zirconia (YSZ) coating to provide thermal insulation for its turbine blades. This YSZ coating must be tetragonal in crystal structure, columnar in microstructure, and be 100--250 mum thick to provide for adequate protection for the turbine blades in the severe engine environment. Currently, YSZ coatings are fabricated by electron-beam physical vapor deposition (EB-PVD), but this fabrication method is cost intensive. Chemical vapor deposition (CVD) is a more commercially viable processing method and a possible alternative to EB-PVD. The deposition of tetragonal YSZ from gaseous metal and oxidation sources were studied. A chemical equilibrium analysis modeled the feasibility of depositing tetragonal YSZ for both chloride CVD (Zr-Y-C-O-Cl-H-Inert system) and metal-organic CVD (MOCVD) (Zr-Y-C-O-H system). Pure thermochemical properties and the assessed YSZ phase diagram were used in this analysis. Using the molar input of metals ((nY + nZr) and ( nY/(nY + nZr ) = 0.08)) as bases, equilibrium calculations showed that tetragonal YSZ formation was feasible. Tetragonal YSZ formation was feasible with high oxygen content (nO/(nY + nZr) > 8) and high temperature (T > 100°C) in the case of chloride CVD (Zr-Y-C-O-Cl-H-Inert). Tetragonal YSZ formation was feasible with high oxygen content (nO/( nY + nZr) > 5) and high temperature (T > 950°C) in the case of MOCVD (Zr-Y-C-O-H). Although solid carbon formation did not appear in chloride CVD, additional oxygen (nO/( nY + nZr) > 32) and low hydrogen content relative to carbon (nH/nC < 2) were required to avoid solid carbon formation in MOCVD. Coatings were deposited using a set of base conditions derived from the chemical equilibrium analysis. In chloride CVD, YCl3 was not included because of its low vapor pressure, thus, ZrCl4 was oxidized with the H2-CO2 gas mixture. Monoclinic ZrO2 coatings were deposited at the thermochemically optimized conditions (n O/(nY + nZr) > 8, T > 1004�

Preparation of dilute magnetic semiconductor films by metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Nouhi, Akbar (Inventor); Stirn, Richard J. (Inventor)

1988-01-01

A method for preparation of a dilute magnetic semiconductor (DMS) film is provided, in which a Group II metal source, a Group VI metal source and a transition metal magnetic ion source are pyrolyzed in the reactor of a metalorganic chemical vapor deposition (MOCVD) system by contact with a heated substrate. As an example, the preparation of films of Cd(sub 1-x)Mn(sub x)Te, in which 0 is less than or equal to x less than or equal to 0.7, on suitable substrates (e.g., GaAs) is described. As a source of manganese, tricarbonyl (methylcyclopentadienyl) manganese (TCPMn) is employed. To prevent TCPMn condensation during its introduction into the reactor, the gas lines, valves and reactor tubes are heated. A thin-film solar cell of n-i-p structure, in which the i-type layer comprises a DMS, is also described; the i-type layer is suitably prepared by MOCVD.

Effect of Hydrogen in Zinc Oxide Thin-Film Transistor Grown by Metal Organic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Jo, Jungyol; Seo, Ogweon; Jeong, Euihyuk; Seo, Hyunseok; Lee, Byeongon; Choi, Yearn-Ik

2007-04-01

We studied the transport characteristics of ZnO grown by metal organic chemical vapor deposition (MOCVD) at temperatures between 200 and 500 °C. The crystal quality, measured by X-ray diffraction, improved as the growth temperature increased. However, the mobility measured in the thin-film transistor (TFT) decreased in films grown at higher temperatures. In our experiments, a ZnO TFT grown at 250 °C showed good electrical characteristics, with a 13 cm2 V-1 s-1 mobility and a 103 on/off ratio. We conclude that hydrogen incorporated during MOCVD growth plays an important role in determining the transistor characteristics. This was supported by results of secondary ion mass spectroscopy (SIMS), where a higher hydrogen concentration was observed in films grown at lower temperatures.

Silicon deposition in nanopores using a liquid precursor.

PubMed

Masuda, Takashi; Tatsuda, Narihito; Yano, Kazuhisa; Shimoda, Tatsuya

2016-11-22

Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.

Silicon deposition in nanopores using a liquid precursor

NASA Astrophysics Data System (ADS)

Masuda, Takashi; Tatsuda, Narihito; Yano, Kazuhisa; Shimoda, Tatsuya

2016-11-01

Techniques for depositing silicon into nanosized spaces are vital for the further scaling down of next-generation devices in the semiconductor industry. In this study, we filled silicon into 3.5-nm-diameter nanopores with an aspect ratio of 70 by exploiting thermodynamic behaviour based on the van der Waals energy of vaporized cyclopentasilane (CPS). We originally synthesized CPS as a liquid precursor for semiconducting silicon. Here we used CPS as a gas source in thermal chemical vapour deposition under atmospheric pressure because vaporized CPS can fill nanopores spontaneously. Our estimation of the free energy of CPS based on Lifshitz van der Waals theory clarified the filling mechanism, where CPS vapour in the nanopores readily undergoes capillary condensation because of its large molar volume compared to those of other vapours such as water, toluene, silane, and disilane. Consequently, a liquid-specific feature was observed during the deposition process; specifically, condensed CPS penetrated into the nanopores spontaneously via capillary force. The CPS that filled the nanopores was then transformed into solid silicon by thermal decomposition at 400 °C. The developed method is expected to be used as a nanoscale silicon filling technology, which is critical for the fabrication of future quantum scale silicon devices.

Studies of copper and gold vapour lasers

NASA Astrophysics Data System (ADS)

Clark, Graeme Lawrence

The work described in this thesis covers various aspects of pulsed copper and gold vapour lasers. The work is divided into four main parts : a computer model of the kinetics of the copper vapour laser discharge; construction and characterization of a copper vapour laser and a gold vapour laser system (to be used for photodynamic cancer treatment); analysis of the thermal processes occurring in the various forms of thermal insulation used in these lasers; and studies of the use of metal walls to confine a discharge plasma. The results of this work were combined in the design of the first copper vapour laser to use metal rather than an electrically insulating ceramic material for confinement of the discharge plasma. Laser action in copper vapour has been achieved in a number of metal-walled designs, with continuous lengths of metal ranging from 30 mm, in a segmented design, to 400 mm, where the discharge plasma was confined by two molybdenum tubes of this length. A theoretical explanation of the behaviour of plasmas in metal-walled discharge vessels is described.

Polyethylene Oxide Films Polymerized by Radio Frequency Plasma-Enhanced Chemical Vapour Phase Deposition and Its Adsorption Behaviour of Platelet-Rich Plasma

NASA Astrophysics Data System (ADS)

Hu, Wen-Juan; Xie, Fen-Yan; Chen, Qiang; Weng, Jing

2008-10-01

We present polyethylene oxide (PEO) functional films polymerized by rf plasma-enhanced vapour chemical deposition (rf-PECVD) on p-Si (100) surface with precursor ethylene glycol dimethyl ether (EGDME) and diluted Ar in pulsed plasma mode. The influences of discharge parameters on the film properties and compounds are investigated. The film structure is analysed by Fourier transform infrared (FTIR) spectroscopy. The water contact angle measurement and atomic force microscope (AFM) are employed to examine the surface polarity and to detect surface morphology, respectively. It is concluded that the smaller duty cycle in pulsed plasma mode contributes to the rich C-O-C (EO) group on the surfaces. As an application, the adsorption behaviour of platelet-rich plasma on plasma polymerization films performed in-vitro is explored. The shapes of attached cells are studied in detail by an optic invert microscope, which clarifies that high-density C-O-C groups on surfaces are responsible for non-fouling adsorption behaviour of the PEO films.

Doping and compensation in Al-rich AlGaN grown on single crystal AlN and sapphire by MOCVD

NASA Astrophysics Data System (ADS)

Bryan, Isaac; Bryan, Zachary; Washiyama, Shun; Reddy, Pramod; Gaddy, Benjamin; Sarkar, Biplab; Breckenridge, M. Hayden; Guo, Qiang; Bobea, Milena; Tweedie, James; Mita, Seiji; Irving, Douglas; Collazo, Ramon; Sitar, Zlatko

2018-02-01

In order to understand the influence of dislocations on doping and compensation in Al-rich AlGaN, thin films were grown by metal organic chemical vapor deposition (MOCVD) on different templates on sapphire and low dislocation density single crystalline AlN. AlGaN grown on AlN exhibited the highest conductivity, carrier concentration, and mobility for any doping concentration due to low threading dislocation related compensation and reduced self-compensation. The onset of self-compensation, i.e., the "knee behavior" in conductivity, was found to depend only on the chemical potential of silicon, strongly indicating the cation vacancy complex with Si as the source of self-compensation. However, the magnitude of self-compensation was found to increase with an increase in dislocation density, and consequently, AlGaN grown on AlN substrates demonstrated higher conductivity over the entire doping range.

Sub-atmospheric pressure gas sources for bulk storage and delivery of arsine and phosphine to MOCVD tools

NASA Astrophysics Data System (ADS)

Raynor, M. W.; Houlding, V. H.; Funke, H. H.; Frye, R.; Dietz, J. A.

2003-02-01

A sub-atmospheric (SA) pressure gas source, based on the reversible adsorption of hydride gas onto a high surface area substrate within a cylinder, has been developed for the safe storage and delivery of high-purity arsine and phosphine for MOCVD processes. SA pressure and high-pressure sources are compared with respect to gas delivery and purity, risk reduction, and cost benefits. Gas analysis and performance of epi-structures grown with SA pressure cylinders confirm that the hydride gas delivered meets the purity requirements of MOCVD processes. Further, the low gas release rates measured from 2.2 and 49 l SA pressure cylinders indicate that the technology can be scaled up without additional safety risk.

Modelling of MOCVD Reactor: New 3D Approach

NASA Astrophysics Data System (ADS)

Raj, E.; Lisik, Z.; Niedzielski, P.; Ruta, L.; Turczynski, M.; Wang, X.; Waag, A.

2014-04-01

The paper presents comparison of two different 3D models of vertical, rotating disc MOCVD reactor used for 3D GaN structure growth. The first one is based on the reactor symmetry, while the second, novel one incorporates only single line of showerhead nozzles. It is shown that both of them can be applied interchangeably regarding the phenomena taking place within the processing area. Moreover, the importance of boundary conditions regarding proper modelling of showerhead cooling and the significance of thermal radiation on temperature field within the modelled structure are presented and analysed. The last phenomenon is erroneously neglected in most of the hitherto studies.

The role of magmas in the formation of hydrothermal ore deposits

USGS Publications Warehouse

Hedenquist, Jeffrey W.; Lowenstern, Jacob B.

1994-01-01

Magmatic fluids, both vapour and hypersaline liquid, are a primary source of many components in hydrothermal ore deposits formed in volcanic arcs. These components, including metals and their ligands, become concentrated in magmas in various ways from various sources, including subducted oceanic crust. Leaching of rocks also contributes components to the hydrothermal fluid—a process enhanced where acid magmatic vapours are absorbed by deeply circulating meteoric waters. Advances in understanding the hydrothermal systems that formed these ore deposits have come from the study of their active equivalents, represented at the surface by hot springs and volcanic fumaroles.

Fluid inclusion study of some Sarrabus fluorite deposits, Sardinia, Italy.

USGS Publications Warehouse

Belkin, H.E.; de Vivo, B.; Valera, R.

1984-01-01

Fluid inclusions in six deposits of fluorite fracture fillings associated with Hercynian (Carboniferous) cycle magmatism were studied by microthermometric techniques. All the inclusions were liquid dominated, aqueous, and homogenized in the liquid phase. One-phase (liquid), two-phase (liquid + vapour) and three-phase (liquid, vapour, and solid NaCl daughter mineral) fluid inclusions were noted. This study indicates that five of the fluorite deposits formed from 95o-125oC fluids with approx 15 wt.% NaCl. One other deposit appears to have been formed by very dilute solutions at approx 125oC. It is suggested that the local fluorite-forming process was the formation of fracture-localized hydrothermal systems in which magmatic water interaction with some other fluid-connate, meteoric, or marine.-G.J.N.

Advanced indium phosphide based monolithic integration using quantum well intermixing and MOCVD regrowth

NASA Astrophysics Data System (ADS)

Raring, James W.

The proliferation of the internet has fueled the explosive growth of telecommunications over the past three decades. As a result, the demand for communication systems providing increased bandwidth and flexibility at lower cost continues to rise. Lightwave communication systems meet these demands. The integration of multiple optoelectronic components onto a single chip could revolutionize the photonics industry. Photonic integrated circuits (PIC) provide the potential for cost reduction, decreased loss, decreased power consumption, and drastic space savings over conventional fiber optic communication systems comprised of discrete components. For optimal performance, each component within the PIC may require a unique epitaxial layer structure, band-gap energy, and/or waveguide architecture. Conventional integration methods facilitating such flexibility are increasingly complex and often result in decreased device yield, driving fabrication costs upward. It is this trade-off between performance and device yield that has hindered the scaling of photonic circuits. This dissertation presents high-functionality PICs operating at 10 and 40 Gb/s fabricated using novel integration technologies based on a robust quantum-well-intermixing (QWI) method and metal organic chemical vapor deposition (MOCVD) regrowth. We optimize the QWI process for the integration of high-performance quantum well electroabsorption modulators (QW-EAM) with sampled-grating (SG) DBR lasers to demonstrate the first widely-tunable negative chirp 10 and 40 Gb/s EAM based transmitters. Alone, QWI does not afford the integration of high-performance semiconductor optical amplifiers (SOA) and photodetectors with the transmitters. To overcome this limitation, we have developed a novel high-flexibility integration scheme combining MOCVD regrowth with QWI to merge low optical confinement factor SOAs and 40 Gb/s uni-traveling carrier (UTC) photodiodes on the same chip as the QW-EAM based transmitters. These high

Broad Temperature Pinning Study of 15 mol.% Zr-Added (Gd, Y)-Ba-Cu-O MOCVD Coated Conductors

DOE Office of Scientific and Technical Information (OSTI.GOV)

Xu, AX; Khatri, N; Liu, YH

BaZrO3 (BZO) nanocolumns have long been shown to be very effective for raising the pinning force F-p of REBa2Cu3Ox (REBCO, where RE = rare earth) films at high temperatures and recently at low temperatures too. We have successfully incorporated a high density of BZO nanorods into metal organic chemical vapor deposited (MOCVD) REBCO coated conductors via Zr addition. We found that, compared to the 7.5% Zr-added coated conductor, dense BZO nanorod arrays in the 15% Zr-added conductor are effective over the whole temperature range from 77 K down to 4.2 K. We attribute the substantially enhanced J(c) at 30 Kmore » to the weak uncorrelated pinning as well as the strong correlated pinning. Meanwhile, by tripling the REBCO layer thickness to similar to 2.8 mu m, the engineering critical current density J(e) at 30 K exceeds J(e) of optimized Nb-Ti wires at 4.2 K.« less

Epitaxial Growth of BGaAs and BGaInAs by MOCVD: Preprint

DOE Office of Scientific and Technical Information (OSTI.GOV)

Geisz, J. F.; Friedman, D. J.; Kurtz, S. R.

2001-10-01

Presented at the 2001 NCPV Program Review Meeting: Comparison of use of TMB, TEB, and BF3 to diborane for MOCVD growth of BGaInAs. BGaInAs can potentially be used in strain-free high-efficiency III-V solar cells, but the growth of sufficiently high-quality epitaxial BGaInAs using diborane has proven difficult. We compare the use of alternative boron precursors (trimethylboron [TMB], triethylboron [TEB], and boron trifluoride [BF{sub 3}]) with diborane for the MOCVD growth of these boron-containing III-V alloys. We find that TMB and BF{sub 3} do not result in significant boron incorporation into GaAs. TEB does result in boron incorporation in a mannermore » very similar to diborane. Both diborane and TEB incorporate more efficiently using triethylgallium (TEG) rather than trimethylgallium (TMG), making TEG a preferred source of gallium for BGaAs epitaxy. Using TEB together with TEG, a higher boron composition (x = 4%-7%) has been achieved than has been previously reported, but we are still unable to achieve high- quality BGaInAs with the correct composition for solar cell applications.« less

Parametric study of waste chicken fat catalytic chemical vapour deposition for controlled synthesis of vertically aligned carbon nanotubes

NASA Astrophysics Data System (ADS)

Suriani, A. B.; Dalila, A. R.; Mohamed, A.; Rosmi, M. S.; Mamat, M. H.; Malek, M. F.; Ahmad, M. K.; Hashim, N.; Isa, I. M.; Soga, T.; Tanemura, M.

2016-12-01

High-quality vertically aligned carbon nanotubes (VACNTs) were synthesised using ferrocene-chicken oil mixture utilising a thermal chemical vapour deposition (TCVD) method. Reaction parameters including vaporisation temperature, catalyst concentration and synthesis time were examined for the first time to investigate their influence on the growth of VACNTs. Analysis via field emission scanning electron microscopy and micro-Raman spectroscopy revealed that the growth rate, diameter and crystallinity of VACNTs depend on the varied synthesis parameters. Vaporisation temperature of 570°C, catalyst concentration of 5.33 wt% and synthesis time of 60 min were considered as optimum parameters for the production of VACNTs from waste chicken fat. These parameters are able to produce VACNTs with small diameters in the range of 15-30 nm and good quality (ID/IG 0.39 and purity 76%) which were comparable to those synthesised using conventional carbon precursor. The low turn on and threshold fields of VACNTs synthesised using optimum parameters indicated that the VACNTs synthesised using waste chicken fat are good candidate for field electron emitter. The result of this study therefore can be used to optimise the growth and production of VACNTs from waste chicken fat in a large scale for field emission application.

Effects of ball-milling on lithium insertion into multi-walled carbon nanotubes synthesized by thermal chemical vapour deposition

NASA Astrophysics Data System (ADS)

Eom, JiYong; Kim, DongYung; Kwon, HyukSang

The effects of ball-milling on Li insertion into multi-walled carbon nanotubes (MWNTs) are presented. The MWNTs are synthesized on supported catalysts by thermal chemical vapour deposition, purified, and mechanically ball-milled by the high energy ball-milling. The purified MWNTs and the ball-milled MWNTs were electrochemically inserted with Li. Structural and chemical modifications in the ball-milled MWNTs change the insertion-extraction properties of Li ions into/from the ball-milled MWNTs. The reversible capacity (C rev) increases with increasing ball-milling time, namely, from 351 mAh g -1 (Li 0.9C 6) for the purified MWNTs to 641 mAh g -1 (Li 1.7C 6) for the ball-milled MWNTs. The undesirable irreversible capacity (C irr) decreases continuously with increase in the ball-milling time, namely, from 1012 mAh g -1 (Li 2.7C 6) for the purified MWNTs to 518 mAh g -1 (Li 1.4C 6) for the ball-milled MWNTs. The decrease in C irr of the ball-milled samples results in an increase in the coulombic efficiency from 25% for the purified samples to 50% for the ball-milled samples. In addition, the ball-milled samples maintain a more stable capacity than the purified samples during charge-discharge cycling.

Roughness and compressive strength of FDM 3D printed specimens affected by acetone vapour treatment

NASA Astrophysics Data System (ADS)

Beniak, Juraj; Križan, Peter; Šooš, Ľubomír; Matúš, Miloš

2018-01-01

Rapid Prototyping technologies are the fastest growing technologies in the manufacturing of components and parts. There are many techniques which can be used with different materials and different purposes of produced part. Gradually, Rapid Prototyping systems have grown into Additive Manufacturing, because technology expansion brings faster production, improved manufactured components, and expanded palette of used materials. So now this techniques are also used for regular production of special parts, where is usual change of part design, where is necessary to produce variety of different designs and shapes. The following article deals with Fused Deposition Modelling (FDM) technology, the core of which is the manufacture models and components from thermoplastic polymers by deposition single fibres of semi-molten plastic material layer by layer. The article focuses on the results of research for testing of manufactured specimens by FDM technology. Components are modified by acetone vapour for surface smoothing. The purpose is to point out how the additional specimen treatment influence the strength properties. Presented paper shows realized experiments and measurements of compressive force on specimens and surface roughness which are influenced by acetone vapour treatment.

Dislocation confinement in the growth of Na flux GaN on metalorganic chemical vapor deposition-GaN

DOE Office of Scientific and Technical Information (OSTI.GOV)

Takeuchi, S., E-mail: takeuchi@ee.es.osaka-u.ac.jp; Asazu, H.; Nakamura, Y.

2015-12-28

We have demonstrated a GaN growth technique in the Na flux method to confine c-, (a+c)-, and a-type dislocations around the interface between a Na flux GaN crystal and a GaN layer grown by metalorganic chemical vapor deposition (MOCVD) on a (0001) sapphire substrate. Transmission electron microscopy (TEM) clearly revealed detailed interface structures and dislocation behaviors that reduced the density of vertically aligned dislocations threading to the Na flux GaN surface. Submicron-scale voids were formed at the interface above the dislocations with a c component in MOCVD-GaN, while no such voids were formed above the a-type dislocations. The penetration ofmore » the dislocations with a c component into Na flux GaN was, in most cases, effectively blocked by the presence of the voids. Although some dislocations with a c component in the MOCVD-GaN penetrated into the Na flux GaN, their propagation direction changed laterally through the voids. On the other hand, the a-type dislocations propagated laterally and collectively near the interface, when these dislocations in the MOCVD-GaN penetrated into the Na flux GaN. These results indicated that the dislocation propagation behavior was highly sensitive to the type of dislocation, but all types of dislocations were confined to within several micrometers region of the Na flux GaN from the interface. The cause of void formation, the role of voids in controlling the dislocation behavior, and the mechanism of lateral and collective dislocation propagation are discussed on the basis of TEM results.« less

ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire capacitor structure fabricated solely by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Fujisawa, Hironori; Kuwamoto, Kei; Nakashima, Seiji; Shimizu, Masaru

2016-02-01

HfO2-based thin films are one of the key dielectric and ferroelectric materials in Si-CMOS LSIs as well as in oxide electronic nanodevices. In this study, we demonstrated the fabrication of a ZnO/(Hf,Zr)O2/ZnO-trilayered nanowire (NW) capacitor structure solely by metalorganic chemical vapor deposition (MOCVD). 15-nm-thick dielectric (Hf,Zr)O2 and 40-nm-thick top ZnO electrode layers were uniformly grown by MOCVD on a ZnO NW template with average diameter, length, and aspect ratio of 110 nm, 10 µm, and ˜90, respectively. The diameter and aspect ratio of the resultant trilayerd NWs are 200-300 nm and above 30, respectively. The crystalline phase of HfO2 and stacked the structure are also discussed.

One-step growth of thin film SnS with large grains using MOCVD.

PubMed

Clayton, Andrew J; Charbonneau, Cecile M E; Tsoi, Wing C; Siderfin, Peter J; Irvine, Stuart J C

2018-01-01

Thin film tin sulphide (SnS) films were produced with grain sizes greater than 1 μm using a one-step metal organic chemical vapour deposition process. Tin-doped indium oxide (ITO) was used as the substrate, having a similar work function to molybdenum typically used as the back contact, but with potential use of its transparency for bifacial illumination. Tetraethyltin and ditertiarybutylsulphide were used as precursors with process temperatures 430-470 °C to promote film growth with large grains. The film stoichiometry was controlled by varying the precursor partial pressure ratios and characterised with energy dispersive X-ray spectroscopy to optimise the SnS composition. X-ray diffraction and Raman spectroscopy were used to determine the phases that were present in the film and revealed that small amounts of ottemannite Sn 2 S 3 was present when SnS was deposited on to the ITO using optimised growth parameters. Interaction at the SnS/ITO interface to form Sn 2 S 3 was deduced to have resulted for all growth conditions.

Evaporation Source for Deposition of Protective Layers inside Tubes

NASA Astrophysics Data System (ADS)

Musa, Geavit; Mustata, Ion; Dinescu, Gheorghe; Bajeu, George; Raiciu, Elena

1992-09-01

A heated cathode arc can be ignited in vacuum in the vapours of the anode material due to the accelerated electron beam from the cathode. A small assembly, consisting of an electron gun as the cathode and a refractory metal crucible, containing the material to be evaporated, as the anode, can be moved along the axis of the tube whose inside wall is to be covered with a protective layer. The vacuum arc ignited between the electrodes in the vapours of the evaporating anode material ensures a high deposition rate with low thermal energy transport to the tube wall. This new method can be used for the deposition of various metal layers inside different kinds of tubes (metallic, glass, ceramics or plastics).

Noncatalytic thermocouple coatings produced with chemical vapor deposition for flame temperature measurements.

PubMed

Bahlawane, N; Struckmeier, U; Kasper, T S; Osswald, P

2007-01-01

Chemical vapor deposition (CVD) and metal-organic chemical vapor deposition (MOCVD) have been employed to develop alumina thin films in order to protect thermocouples from catalytic overheating in flames and to minimize the intrusion presented to the combustion process. Alumina films obtained with a CVD process using AlCl(3) as the precursor are dense, not contaminated, and crystallize in the corundum structure, while MOCVD using Al(acetyl acetone)(3) allows the growth of corundum alumina with improved growth rates. These films, however, present a porous columnar structure and show some carbon contamination. Therefore, coated thermocouples using AlCl(3)-CVD were judged more suitable for flame temperature measurements and were tested in different fuels over a typical range of stoichiometries. Coated thermocouples exhibit satisfactory measurement reproducibility, no temporal drifts, and do not suffer from catalytic effects. Furthermore, their increased radiative heat loss (observed by infrared spectroscopy) allows temperature measurements over a wider range when compared to uncoated thermocouples. A flame with a well-known temperature profile established with laser-based techniques was used to determine the radiative heat loss correction to account for the difference between the apparent temperature measured by the coated thermocouple and the true flame temperature. The validity of the correction term was confirmed with temperature profile measurements for several flames previously studied in different laboratories with laser-based techniques.

Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process

DOE Office of Scientific and Technical Information (OSTI.GOV)

Swain, Basudev, E-mail: Swain@iae.re.kr; Mishra, Chinmayee; Lee, Chan Gi

2015-07-15

Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga{sub 0.97}N{sub 0.9}O{sub 0.09} is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga{sub 0.97}N{sub 0.9}O{sub 0.09} of the MOCVD dust is leached at the optimum condition. Subsequently, the leachmore » residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4 M HCl, 100 °C and pulp density of 100 kg/m{sup 3,} respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. - Highlights: • Waste MOCVD dust is treated through mechanochemical leaching. • GaN is hardly leached, and converted to NaGaO{sub 2} through ball milling and annealing. • Process for gallium recovery from waste MOCVD dust has been developed. • Thermal analysis and phase properties of GaN to Ga{sub 2}O{sub 3} and GaN to NaGaO{sub 2} is revealed. • Solid-state chemistry involved in this process is reported.« less

MOCVD (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films for high frequency tunable devices.

DOE Office of Scientific and Technical Information (OSTI.GOV)

Baumann, P. K.; Kaufman, D. Y.; Im, J.

2001-01-01

We have investigated the structural and electrical characteristics of (Ba{sub x}Sr{sub 1-x})Ti{sub 1+y}O{sub 3+z} (BST) thin films synthesized at 650{sup o}C on Pt/SiO{sub 2}/Si substrates using a large area, vertical metalorganic chemical vapor deposition (MOCVD) reactor equipped with a liquid delivery system. Films with a Ba/Sr ratio of 70/30 were studied, as determined using X-ray fluorescence spectroscopy (XRF) and Rutherford backscattering spectrometry (RBS). A substantial reduction of the dielectric loss was achieved when annealing the entire capacitor structure in air at 700{sup o}C. Dielectric tunability as high as 2.3:1 was measured for BST capacitors with the currently optimized processing conditions.

Processing of CuInSe{sub 2}-based solar cells: Characterization of deposition processes in terms of chemical reaction analyses. Phase 2 Annual Report, 6 May 1996--5 May 1997

DOE Office of Scientific and Technical Information (OSTI.GOV)

Anderson, T.

This report describes research performed by the University of Florida during Phase 2 of this subcontract. First, to study CIGS, researchers adapted a contactless, nondestructive technique previously developed for measuring photogenerated excess carrier lifetimes in SOI wafers. This dual-beam optical modulation (DBOM) technique was used to investigate the differences between three alternative methods of depositing CdS (conventional chemical-bath deposition [CBD], metal-organic chemical vapor deposition [MOCVD], and sputtering). Second, a critical assessment of the Cu-In-Se thermochemical and phase diagram data using standard CALPHAD procedures is being performed. The outcome of this research will produce useful information on equilibrium vapor compositions (requiredmore » annealing ambients, Sex fluxes from effusion cells), phase diagrams (conditions for melt-assisted growth), chemical potentials (driving forces for diffusion and chemical reactions), and consistent solution models (extents of solid solutions and extending phase diagrams). Third, an integrated facility to fabricate CIS PV devices was established that includes migration-enhanced epitaxy (MEE) for deposition of CIS, a rapid thermal processing furnace for absorber film formation, sputtering of ZnO, CBD or MOCVD of CdS, metallization, and pattern definition.« less

Chemical vapor deposition of high T(sub c) superconducting films in a microgravity environment

NASA Technical Reports Server (NTRS)

Levy, Moises; Sarma, Bimal K.

1994-01-01

Since the discovery of the YBaCuO bulk materials in 1987, Metalorganic Chemical Vapor Deposition (MOCVD) has been proposed for preparing HTSC high T(sub c) films. This technique is now capable of producing high-T(sub c) superconducting thin films comparable in quality to those prepared by any other methods. The MOCVD technique has demonstrated its superior advantage in making large area high quality HTSC thin films and will play a major role in the advance of device applications of HTSC thin films. The organometallic precursors used in the MOCVD preparation of HTSC oxide thin films are most frequently metal beta-diketonates. High T(sub c) superconductors are multi-component oxides which require more than one component source, with each source, containing one kind of precursor. Because the volatility and stability of the precursors are strongly dependent on temperature, system pressure, and carrier gas flow rate, it has been difficult to control the gas phase composition, and hence film stoichiometry. In order circumvent these problems we have built and tested a single source MOCVD reactor in which a specially designed vaporizer was employed. This vaporizer can be used to volatilize a stoichiometric mixture of diketonates of yttrium, barium and copper to produce a mixed vapor in a 1:2:3 ratio respectively of the organometellics. This is accomplished even though the three compounds have significantly different volatilities. We have developed a model which provides insight into the process of vaporizing mixed precursors to produce high quality thin films of Y1Ba2Cu3O7. It shows that under steady state conditions the mixed organometallic vapor must have a stoichiometric ratio of the individual organometallics identical to that in the solid mixture.

Metalorganic chemical vapor deposition growth of InAs/GaSb type II superlattices with controllable AsxSb1-x interfaces

PubMed Central

2012-01-01

InAs/GaSb type II superlattices were grown on (100) GaSb substrates by metalorganic chemical vapor deposition (MOCVD). A plane of mixed As and Sb atoms connecting the InAs and GaSb layers was introduced to compensate the tensile strain created by the InAs layer in the SL. Characterizations of the samples by atomic force microscopy and high-resolution X-ray diffraction demonstrate flat surface morphology and good crystalline quality. The lattice mismatch of approximately 0.18% between the SL and GaSb substrate is small compared to the MOCVD-grown supperlattice samples reported to date in the literature. Considerable optical absorption in 2- to 8-μm infrared region has been realized. PACS: 78.67.Pt; 81.15.Gh; 63.22.Np; 81.05.Ea PMID:22373387

Metal-organic chemical vapor deposition of cerium oxide, gallium-indium-oxide, and magnesium oxide thin films: Precursor design, film growth, and film characterization

NASA Astrophysics Data System (ADS)

Edleman, Nikki Lynn

A new class of volatile, low-melting, fluorine-free lanthanide metal-organic chemical vapor deposition (MOCVD) precursors has been developed. The neutral, monomeric cerium, neodymium, gadolinium, and erbium complexes are coordinatively saturated by a versatile, multidentate, ether-functionalized beta-ketoiminate ligand, and complex melting point and volatility characteristics can be tuned by altering the alkyl substituents on the ligand periphery. Direct comparison with lanthanide beta-diketonate complexes reveals that the present precursor class is a superior choice for lanthanide oxide MOCVD. Epitaxial CeO 2 buffer layer films have been grown on (001) YSZ substrates by MOCVD at significantly lower temperatures than previously reported using one of the newly developed cerium precursors. High-quality YBCO films grown on these CeO2 buffer layers by POMBE exhibit very good electrical transport properties. The cerium complex has therefore been explicitly demonstrated to be a stable and volatile precursor and is attractive for low-temperature growth of coated conductor multilayer structures by MOCVD. Gallium-indium-oxide thin films (GaxIn2-xO 3), x = 0.0˜1.1, have been grown by MOCVD using the volatile metal-organic precursors In(dpm)3 and Ga(dpm)3. The films have a homogeneously Ga-substituted, cubic In2O3 microstructure randomly oriented on quartz or heteroepitaxial on (100) YSZ single-crystal substrates. The highest conductivity of the as-grown films is found at x = 0.12. The optical transmission window and absolute transparency of the films rivals or exceeds that of the most transparent conductive oxides known. Reductive annealing results in improved charge transport characteristics with little loss of optical transparency. No significant difference in electrical properties is observed between randomly oriented and heteroepitaxial films, thus arguing that carrier scattering effects at high-angle grain boundaries play a minor role in the film conductivity mechanism

Comparison of electrical properties and deep traps in p-AlxGa1-xN grown by molecular beam epitaxy and metal organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Polyakov, A. Y.; Smirnov, N. B.; Govorkov, A. V.; Kozhukhova, E. A.; Dabiran, A. M.; Chow, P. P.; Wowchak, A. M.; Lee, In-Hwan; Ju, Jin-Woo; Pearton, S. J.

2009-10-01

The electrical properties, admittance spectra, microcathodoluminescence, and deep trap spectra of p-AlGaN films with an Al mole fraction up to 45% grown by both metal organic chemical vapor deposition (MOCVD) and molecular beam epitaxy (MBE) were compared. The ionization energy of Mg increases from 0.15 to 0.17 eV in p-GaN to 0.3 eV in 45% Al p-AlGaN. In p-GaN films grown by MBE and MOCVD and in MOCVD grown p-AlGaN, we observed additional acceptors with a concentration an order lower than that of Mg acceptors, with a higher hole capture cross section and an ionization energy close to that of Mg. For some of the MBE grown p-AlGaN, we also detected the presence of additional acceptor centers, but in that case the centers were located near the p-AlGaN layer interface with the semi-insulating AlGaN buffer and showed activation energies considerably lower than those of Mg.

The development of technology for growing InAs/GaSb superlattices by MOCVD

NASA Astrophysics Data System (ADS)

Fedorov, I. V.; Levin, R. V.; Nevedomsky, V. N.

2018-03-01

This study is dedicated to developing the technology for growing InAs/GaSb superlattices (SLs) by MOCVD. The structures were studied by transmission electron microscopy (TEM) and photoluminescence (PL) methods. We concluded that hetero-interface sharpness is not affected by the pause time between growth stages for separate layers or by switching the layer direction. A possible interpretation for the spectra of SLs was suggested.

Ultra-fast vapour-liquid-solid synthesis of Si nanowires using ion-beam implanted gallium as catalyst.

PubMed

Hetzel, Martin; Lugstein, Alois; Zeiner, Clemens; Wójcik, Tomasz; Pongratz, Peter; Bertagnolli, Emmerich

2011-09-30

The feasibility of gallium as a catalyst for vapour-liquid-solid (VLS) nanowire (NW) growth deriving from an implantation process in silicon by a focused ion beam (FIB) is investigated. Si(100) substrates are subjected to FIB implantation of gallium ions with various ion fluence rates. NW growth is performed in a hot wall chemical vapour deposition (CVD) reactor at temperatures between 400 and 500 °C with 2% SiH(4)/He as precursor gas. This process results in ultra-fast growth of (112)- and (110)-oriented Si-NWs with a length of several tens of micrometres. Further investigation by transmission electron microscopy indicates the presence of a NW core-shell structure: while the NW core yields crystalline structuring, the shell consists entirely of amorphous material.

Enhanced water vapour flow in silica microchannels and interdiffusive water vapour flow through anodic aluminium oxide (AAO) membranes

NASA Astrophysics Data System (ADS)

Lei, Wenwen; McKenzie, David R.

2015-12-01

Enhanced liquid water flows through carbon nanotubes reinvigorated the study of moisture permeation through membranes and micro- and nano-channels. The study of water vapour through micro-and nano-channels has been neglected even though water vapour is as important as liquid water for industry, especially for encapsulation of electronic devices. Here we measure moisture flow rates in silica microchannels and interdiffusive water vapour flows in anodic aluminium oxide (AAO) membrane channels for the first time. We construct theory for the flow rates of the dominant modes of water transport through four previously defined standard configurations and benchmark it against our new measurements. The findings show that measurements of leak behaviour made using other molecules, such as helium, are not reliable. Single phase water vapour flow is overestimated by a helium measurement, while Washburn or capillary flow is underestimated or for all channels when boundary slip applies, to an extent that depends on the slip length for the liquid phase flows.

Atomic origins of water-vapour-promoted alloy oxidation

NASA Astrophysics Data System (ADS)

Luo, Langli; Su, Mao; Yan, Pengfei; Zou, Lianfeng; Schreiber, Daniel K.; Baer, Donald R.; Zhu, Zihua; Zhou, Guangwen; Wang, Yanting; Bruemmer, Stephen M.; Xu, Zhijie; Wang, Chongmin

2018-06-01

The presence of water vapour, intentional or unavoidable, is crucial to many materials applications, such as in steam generators, turbine engines, fuel cells, catalysts and corrosion1-4. Phenomenologically, water vapour has been noted to accelerate oxidation of metals and alloys5,6. However, the atomistic mechanisms behind such oxidation remain elusive. Through direct in situ atomic-scale transmission electron microscopy observations and density functional theory calculations, we reveal that water-vapour-enhanced oxidation of a nickel-chromium alloy is associated with proton-dissolution-promoted formation, migration, and clustering of both cation and anion vacancies. Protons derived from water dissociation can occupy interstitial positions in the oxide lattice, consequently lowering vacancy formation energy and decreasing the diffusion barrier of both cations and anions, which leads to enhanced oxidation in moist environments at elevated temperatures. This work provides insights into water-vapour-enhanced alloy oxidation and has significant implications in other material and chemical processes involving water vapour, such as corrosion, heterogeneous catalysis and ionic conduction.

Atomic origins of water-vapour-promoted alloy oxidation.

PubMed

Luo, Langli; Su, Mao; Yan, Pengfei; Zou, Lianfeng; Schreiber, Daniel K; Baer, Donald R; Zhu, Zihua; Zhou, Guangwen; Wang, Yanting; Bruemmer, Stephen M; Xu, Zhijie; Wang, Chongmin

2018-06-01

The presence of water vapour, intentional or unavoidable, is crucial to many materials applications, such as in steam generators, turbine engines, fuel cells, catalysts and corrosion 1-4 . Phenomenologically, water vapour has been noted to accelerate oxidation of metals and alloys 5,6 . However, the atomistic mechanisms behind such oxidation remain elusive. Through direct in situ atomic-scale transmission electron microscopy observations and density functional theory calculations, we reveal that water-vapour-enhanced oxidation of a nickel-chromium alloy is associated with proton-dissolution-promoted formation, migration, and clustering of both cation and anion vacancies. Protons derived from water dissociation can occupy interstitial positions in the oxide lattice, consequently lowering vacancy formation energy and decreasing the diffusion barrier of both cations and anions, which leads to enhanced oxidation in moist environments at elevated temperatures. This work provides insights into water-vapour-enhanced alloy oxidation and has significant implications in other material and chemical processes involving water vapour, such as corrosion, heterogeneous catalysis and ionic conduction.

Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

NASA Astrophysics Data System (ADS)

Surender, S.; Pradeep, S.; Ramesh, R.; Baskar, K.

2016-05-01

In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3 nm for a scan area of 5×5 µm2 which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×1017cm-3 and resistivity of 1.7 Ωcm at room temperature.

The ignitability of petrol vapours and potential for vapour phase explosion by use of TASER® law enforcement electronic control device.

PubMed

Clarke, C; Andrews, S P

2014-12-01

An experimental study was made of the potential of the TASER-X26™ law enforcement electronic control device to ignite petrol vapours if used by an officer to incapacitate a person soaked in petrol, or within a flammable atmosphere containing petrol vapour. Bench scale tests have shown that a wooden mannequin with pig skin covering the chest was a suitable representation of a human target. Full scale tests using the mannequin have shown that the arc from a TASER-X26™ is capable of igniting petrol/air vapours on a petrol-soaked person. Further tests in a 1/5 scale and a full scale compartment have shown that if a TASER is used within a compartment, a petrol vapour explosion (deflagration) may be achieved. It is evident from this research that if used in a flammable vapour rich environment, the device could prove fatal not only to the target but the TASER® operator as well. Copyright © 2014 Forensic Science Society. Published by Elsevier Ireland Ltd. All rights reserved.

Synthesis and characterization of a mixed phase of anatase TiO2 and TiO2(B) by low pressure chemical vapour deposition (LPCVD) for high photocatalytic activity

NASA Astrophysics Data System (ADS)

Chimupala, Y.; Hyett, G.; Simpson, R.; Brydson, R.

2014-06-01

This project is concerned with enhancing photocatalytic activity by preparing a mixed phase of nano-sized TiO2. TiO2 thin films were synthesized by using Low Pressure Chemical Vapour Deposition (LPCVD). Titanium isopropoxide and N2 gas were used as the precursor and carrier gas respectively. The effects of reaction temperature, carrier gas flow rate and deposited area were studied. TiO2 thin films with nano-sized TiO2 particles were obtained under suitable conditions and SEM, TEM, powder XRD and Raman spectroscopy were employed to characterize the phase and physical appearance of synthesized materials. Preliminary results show that a dual phase (TiO2(B) and anatase) thin film nanopowder was successfully prepared by LPCVD with needle- and polygonal plate-shape crystallites respectively. This thin film deposit produced a preferred orientation of TiO2(B) needles in the [001] direction of average crystallite size 50-80 nm in length and 5-10 nm in width, whilst the crystallite size of anatase polygonal-plates was around 200 nm. The optimal LPCVD condition for preparing this mixed phase of TiO2 was 600°C with a 1 mL/s N2 flow rate.

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD.

PubMed

Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

2013-04-07

We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 10(7) cm(-2). The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

Vertically p-n-junctioned GaN nano-wire array diode fabricated on Si(111) using MOCVD

NASA Astrophysics Data System (ADS)

Park, Ji-Hyeon; Kim, Min-Hee; Kissinger, Suthan; Lee, Cheul-Ro

2013-03-01

We demonstrate the fabrication of n-GaN:Si/p-GaN:Mg nanowire arrays on (111) silicon substrate by metal organic chemical vapor deposition (MOCVD) method .The nanowires were grown by a newly developed two-step growth process. The diameter of as-grown nanowires ranges from 300-400 nm with a density of 6-7 × 107 cm-2. The p- and n-type doping of the nanowires is achieved with Mg and Si dopant species. Structural characterization by X-ray diffraction (XRD) and high-resolution transmission electron microscopy (HRTEM) indicates that the nanowires are relatively defect-free. The room-temperature photoluminescence emission with a strong peak at 370 nm indicates that the n-GaN:Si/p-GaN:Mg nanowire arrays have potential application in light-emitting nanodevices. The cathodoluminscence (CL) spectrum clearly shows a distinct optical transition of GaN nanodiodes. The nano-n-GaN:Si/p-GaN:Mg diodes were further completed using a sputter coating approach to deposit Au/Ni metal contacts. The polysilazane filler has been etched by a wet chemical etching process. The n-GaN:Si/p-GaN:Mg nanowire diode was fabricated for different Mg source flow rates. The current-voltage (I-V) measurements reveal excellent rectifying properties with an obvious turn-on voltage at 1.6 V for a Mg flow rate of 5 sccm (standard cubic centimeters per minute).

Valorization of GaN based metal-organic chemical vapor deposition dust a semiconductor power device industry waste through mechanochemical oxidation and leaching: A sustainable green process.

PubMed

Swain, Basudev; Mishra, Chinmayee; Lee, Chan Gi; Park, Kyung-Soo; Lee, Kun-Jae

2015-07-01

Dust generated during metal organic vapor deposition (MOCVD) process of GaN based semiconductor power device industry contains significant amounts of gallium and indium. These semiconductor power device industry wastes contain gallium as GaN and Ga0.97N0.9O0.09 is a concern for the environment which can add value through recycling. In the present study, this waste is recycled through mechanochemical oxidation and leaching. For quantitative recovery of gallium, two different mechanochemical oxidation leaching process flow sheets are proposed. In one process, first the Ga0.97N0.9O0.09 of the MOCVD dust is leached at the optimum condition. Subsequently, the leach residue is mechanochemically treated, followed by oxidative annealing and finally re-leached. In the second process, the MOCVD waste dust is mechanochemically treated, followed by oxidative annealing and finally leached. Both of these treatment processes are competitive with each other, appropriate for gallium leaching and treatment of the waste MOCVD dust. Without mechanochemical oxidation, 40.11 and 1.86 w/w% of gallium and Indium are leached using 4M HCl, 100°C and pulp density of 100 kg/m(3,) respectively. After mechanochemical oxidation, both these processes achieved 90 w/w% of gallium and 1.86 w/w% of indium leaching at their optimum condition. Copyright © 2015 Elsevier Inc. All rights reserved.

Characteristics of Mg-doped and In-Mg co-doped p-type GaN epitaxial layers grown by metal organic chemical vapour deposition

NASA Astrophysics Data System (ADS)

Chung, S. J.; Senthil Kumar, M.; Lee, Y. S.; Suh, E.-K.; An, M. H.

2010-05-01

Mg-doped and In-Mg co-doped p-type GaN epilayers were grown using the metal organic chemical vapour deposition technique. The effect of In co-doping on the physical properties of p-GaN layer was examined by high resolution x-ray diffraction (HRXRD), transmission electron microscopy (TEM), Hall effect, photoluminescence (PL) and persistent photoconductivity (PPC) at room temperature. An improved crystalline quality and a reduction in threading dislocation density are evidenced upon In doping in p-GaN from HRXRD and TEM images. Hole conductivity, mobility and carrier density also significantly improved by In co-doping. PL studies of the In-Mg co-doped sample revealed that the peak position is blue shifted to 3.2 eV from 2.95 eV of conventional p-GaN and the PL intensity is increased by about 25%. In addition, In co-doping significantly reduced the PPC effect in p-type GaN layers. The improved electrical and optical properties are believed to be associated with the active participation of isolated Mg impurities.

Induction-heating MOCVD reactor with significantly improved heating efficiency and reduced harmful magnetic coupling

NASA Astrophysics Data System (ADS)

Li, Kuang-Hui; Alotaibi, Hamad S.; Sun, Haiding; Lin, Ronghui; Guo, Wenzhe; Torres-Castanedo, Carlos G.; Liu, Kaikai; Valdes-Galán, Sergio; Li, Xiaohang

2018-04-01

In a conventional induction-heating III-nitride metalorganic chemical vapor deposition (MOCVD) reactor, the induction coil is outside the chamber. Therefore, the magnetic field does not couple with the susceptor well, leading to compromised heating efficiency and harmful coupling with the gas inlet and thus possible overheating. Hence, the gas inlet has to be at a minimum distance away from the susceptor. Because of the elongated flow path, premature reactions can be more severe, particularly between Al- and B-containing precursors and NH3. Here, we propose a structure that can significantly improve the heating efficiency and allow the gas inlet to be closer to the susceptor. Specifically, the induction coil is designed to surround the vertical cylinder of a T-shaped susceptor comprising the cylinder and a top horizontal plate holding the wafer substrate within the reactor. Therefore, the cylinder coupled most magnetic field to serve as the thermal source for the plate. Furthermore, the plate can block and thus significantly reduce the uncoupled magnetic field above the susceptor, thereby allowing the gas inlet to be closer. The results show approximately 140% and 2.6 times increase in the heating and susceptor coupling efficiencies, respectively, as well as a 90% reduction in the harmful magnetic flux on the gas inlet.

EFFECTS OF Au ON THE GROWTH OF ZnO NANOSTRUCTURES ON Si BY MOCVD

NASA Astrophysics Data System (ADS)

Cong, Chen; Fan, Lu Yang; Ping, He Hai; Wei, Wu Ke; Zhen, Ye Zhi

2013-06-01

The effects of Au on the growth of ZnO nanostructures on Si by metal organic chemical vapor deposition (MOCVD) at a relatively low temperature (450°C) were investigated. The experimental results showed that Au nanoparticles played a critical role during the growth of the ZnO nanostructures and affected their morphology and optical properties. It was found that Au nanoparticles particularly affected the nucleation of ZnO nanostructures during the growth process and the Au-assisted growth mechanism of ZnO nanostructures should be ascribed to the vapor-solid (VS) mechanism. The formation of a nanoneedle may be attributed to a more reactive interface between Au and ZnO, which leads to more zinc gaseous species absorbed near the interface. Different nucleation sites on ZnO nuclei resulted in the disorder of ZnO nanoneedles. Moreover, the crystalline quality of nano-ZnO was improved due to the presence of Au, according to the smaller full width at half maximum (FWHM) of the low-temperature exciton emission. We confirmed that ZnO nanoneedles showed better crystalline quality than ZnO nanorods through the HRTEM images and the SAED patterns. The reason for the improvement of the crystalline quality of nano-ZnO may be due to the less lattice mismatch.

Methods and systems for fabricating high quality superconducting tapes

DOE Office of Scientific and Technical Information (OSTI.GOV)

Majkic, Goran; Selvamanickam, Venkat

An MOCVD system fabricates high quality superconductor tapes with variable thicknesses. The MOCVD system can include a gas flow chamber between two parallel channels in a housing. A substrate tape is heated and then passed through the MOCVD housing such that the gas flow is perpendicular to the tape's surface. Precursors are injected into the gas flow for deposition on the substrate tape. In this way, superconductor tapes can be fabricated with variable thicknesses, uniform precursor deposition, and high critical current densities.

Water Vapour Effects in Mass Measurement

NASA Astrophysics Data System (ADS)

Khélifa, N.

2008-01-01

Water vapour density inside the mass comparator enclosure is a critical parameter whose fluctuations during mass weighing can lead to errors in the determination of an unknown mass. To monitor them, a method using DFB laser diode in the near infrared has been proposed and tested. Preliminary results of our observation of water vapour sorption and de-sorption processes from the walls and the mass standard are reported.

Effect of oxygen plasma on field emission characteristics of single-wall carbon nanotubes grown by plasma enhanced chemical vapour deposition system

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, Avshish; Parveen, Shama; Husain, Samina

2014-02-28

Field emission properties of single wall carbon nanotubes (SWCNTs) grown on iron catalyst film by plasma enhanced chemical vapour deposition system were studied in diode configuration. The results were analysed in the framework of Fowler-Nordheim theory. The grown SWCNTs were found to be excellent field emitters, having emission current density higher than 20 mA/cm{sup 2} at a turn-on field of 1.3 V/μm. The as grown SWCNTs were further treated with Oxygen (O{sub 2}) plasma for 5 min and again field emission characteristics were measured. The O{sub 2} plasma treated SWCNTs have shown dramatic improvement in their field emission properties with emission current densitymore » of 111 mA/cm{sup 2} at a much lower turn on field of 0.8 V/μm. The as grown as well as plasma treated SWCNTs were also characterized by various techniques, such as scanning electron microscopy, high resolution transmission electron microscopy, Raman spectroscopy, and Fourier transform infrared spectroscopy before and after O{sub 2} plasma treatment and the findings are being reported in this paper.« less

Improvement of crystalline quality of N-polar AlN layers on c-plane sapphire by low-pressure flow-modulated MOCVD

NASA Astrophysics Data System (ADS)

Takeuchi, M.; Shimizu, H.; Kajitani, R.; Kawasaki, K.; Kumagai, Y.; Koukitu, A.; Aoyagi, Y.

2007-01-01

The growth of N-polar AlN layers on c-plane sapphire is reported. Low-temperature AlN (LT-AlN) layers were used as seeding buffer layers with pre-nitridation for sapphire. To avoid strong vapor-phase reaction between trimethylaluminum (TMA) and ammonia (NH 3) and to improve the crystalline quality, low-pressure flow-modulated (FM) metal-organic chemical vapor deposition (MOCVD) technique was introduced with careful optimization of the FM sequence. The surface morphologies and the crystalline quality defined by the X-ray diffraction (XRD) (0 0 2) and (1 0 0) rocking curve measurements strongly depended on the LT-AlN thickness and on the TMA coverage per cycle of the FM growth. The sample showing the best XRD data with a good morphology was almost completely etched in aqueous KOH solution owing to N-polarity. From the plan-view transmission electron microscopy (TEM) observation, the dislocation density was counted to be about 3×10 10 cm -2.

Optical properties of m-plane GaN grown on patterned Si(112) substrates by MOCVD using a two-step approach

NASA Astrophysics Data System (ADS)

Izyumskaya, N.; Okur, S.; Zhang, F.; Monavarian, M.; Avrutin, V.; Özgür, Ü.; Metzner, S.; Karbaum, C.; Bertram, F.; Christen, J.; Morkoç, H.

2014-03-01

Nonpolar m-plane GaN layers were grown on patterned Si (112) substrates by metal-organic chemical vapor deposition (MOCVD). A two-step growth procedure involving a low-pressure (30 Torr) first step to ensure formation of the m-plane facet and a high-pressure step (200 Torr) for improvement of optical quality was employed. The layers grown in two steps show improvement of the optical quality: the near-bandedge photoluminescence (PL) intensity is about 3 times higher than that for the layers grown at low pressure, and deep emission is considerably weaker. However, emission intensity from m-GaN is still lower than that of polar and semipolar (1 100 ) reference samples grown under the same conditions. To shed light on this problem, spatial distribution of optical emission over the c+ and c- wings of the nonpolar GaN/Si was studied by spatially resolved cathodoluminescence and near-field scanning optical microscopy.

Metalorganic chemical vapor deposition and characterization of ZnO materials

NASA Astrophysics Data System (ADS)

Sun, Shangzu; Tompa, Gary S.; Hoerman, Brent; Look, David C.; Claflin, Bruce B.; Rice, Catherine E.; Masaun, Puneet

2006-04-01

Zinc oxide is attracting growing interest for potential applications in electronics, optoelectronics, photonics, and chemical and biochemical sensing, among other applications. We report herein our efforts in the growth and characterization of p- and n-type ZnO materials by metalorganic chemical vapor deposition (MOCVD), focusing on recent nitrogen-doped films grown using diethyl zinc as the zinc precursor and nitric oxide (NO) as the dopant. Characterization results, including resistivity, Hall measurements, photoluminescence, and SIMS, are reported and discussed. Electrical behavior was observed to be dependent on illumination, atmosphere, and heat treatment, especially for p-type material.

New method to assess the water vapour permeance of wound coverings.

PubMed

Jonkman, M F; Molenaar, I; Nieuwenhuis, P; Bruin, P; Pennings, A J

1988-05-01

A new method for assessing the permeability to water vapour of wound coverings is presented, using the evaporimeter developed by Nilsson. This new method combines the water vapour transmission rate (WVTR) and the vapour pressure difference across a wound covering in one absolute measure: the water vapour permeance (WVP). The WVP of a wound covering is the steady flow (g) of water vapour per unit (m2) area of surface in unit (h) time induced by unit (kPa) vapour pressure difference, g.m-2.h-1.kPa-1. Since the WVP of a wound covering is a more accurate measure for the permeability than the WVTR is, it facilitates the prediction of the water exchange of a wound covering in clinical situations.

Medical cannabis use in Canada: vapourization and modes of delivery.

PubMed

Shiplo, Samantha; Asbridge, Mark; Leatherdale, Scott T; Hammond, David

2016-10-29

The mode of medical cannabis delivery-whether cannabis is smoked, vapourized, or consumed orally-may have important implications for its therapeutic efficacy and health risks. However, there is very little evidence on current patterns of use among Canadian medical cannabis users, particularly with respect to modes of delivery. The current study examined modes of medical cannabis delivery following regulatory changes in 2014 governing how Canadians access medical cannabis. A total of 364 approved adult Canadian medical cannabis users completed an online cross-sectional survey between April and June 2015. The survey examined patterns of medical cannabis use, modes of delivery used, and reasons for use. Participants were recruited through a convenience sample from nine Health Canada licensed producers. Using a vapourizer was the most popular mode of delivery for medical cannabis (53 %), followed by smoking a joint (47 %). The main reason for using a vapourizer was to reduce negative health consequences associated with smoking. A majority of current vapourizer users reported using a portable vapourizer (67.2 %), followed by a stationary vapourizer (41.7 %), and an e-cigarette or vape pen (19.3 %). Current use of a vapourizer was associated with fewer respiratory symptoms (AOR = 1.28, 95 % CI 1.05-1.56, p = 0.01). The findings suggest an increase in the popularity of vapourizers as the primary mode of delivery among approved medical users. Using vapourizers has the potential to prevent some of the adverse respiratory health consequences associated with smoking and may serve as an effective harm reduction method. Monitoring implications of such current and future changes to medical cannabis regulations may be beneficial to policymakers.

Amorphous alumina coatings: processing, structure and remarkable barrier properties.

PubMed

Samélor, Diane; Lazar, Ana-Maria; Aufray, Maëlenn; Tendero, Claire; Lacroix, Loïc; Béguin, Jean-Denis; Caussat, Brigitte; Vergnes, Hugues; Alexis, Joël; Poquillon, Dominique; Pébère, Nadine; Gleizes, Alain; Vahlas, Constantin

2011-09-01

Amorphous aluminium oxide coatings were processed by metalorganic chemical vapour deposition (MOCVD); their structural characteristics were determined as a function of the processing conditions, the process was modelled considering appropriate chemical kinetic schemes, and the properties of the obtained material were investigated and were correlated with the nanostructure of the coatings. With increasing processing temperature in the range 350 degrees C-700 degrees C, subatmospheric MOCVD of alumina from aluminium tri-isopropoxide (ATI) sequentially yields partially hydroxylated amorphous aluminium oxides, amorphous Al2O3 (415 degrees C-650 degrees C) and nanostructured gamma-Al2O3 films. A numerical model for the process allowed reproducing the non uniformity of deposition rate along the substrate zone due to the depletion of ATI. The hardness of the coatings prepared at 350 degrees C, 480 degrees C and 700 degrees C is 6 GPa, 11 GPa and 1 GPa, respectively. Scratch tests on films grown on TA6V titanium alloy reveal adhesive and cohesive failures for the amorphous and nanocrystalline ones, respectively. Alumina coating processed at 480 degrees C on TA6V yielded zero weight gain after oxidation at 600 degrees C in lab air. The surface of such low temperature processed amorphous films is hydrophobic (water contact angle 106 degrees), while the high temperature processed nanocrystalline films are hydrophilic (48 degrees at a deposition temperature of 700 degrees C). It is concluded that amorphous Al2O3 coatings can be used as oxidation and corrosion barriers at ambient or moderate temperature. Nanostructured with Pt or Ag nanoparticles, they can also provide anti-fouling or catalytic surfaces.

Free and bound excitons in thin wurtzite GaN layers on sapphire

NASA Astrophysics Data System (ADS)

Merz, C.; Kunzer, M.; Kaufmann, U.; Akasaki, I.; Amano, H.

1996-05-01

Free and bound excitons have been studied by photoluminescence in thin (0268-1242/11/5/010/img8) wurtzite-undoped GaN, n-type GaN:Si as well as p-type GaN:Mg and GaN:Zn layers grown by metal-organic chemical vapour phase deposition (MOCVD). An accurate value for the free A exciton binding energy and an estimate for the isotropically averaged hole mass of the uppermost 0268-1242/11/5/010/img9 valence band are deduced from the data on undoped samples. The acceptor-doped samples reveal recombination lines which are attributed to excitons bound to 0268-1242/11/5/010/img10 and 0268-1242/11/5/010/img11 respectively. These lines are spectrally clearly separated and the exciton localization energies are in line with Haynes' rule. Whenever a comparison is possible, it is found that the exciton lines in these thin MOCVD layers are ultraviolet-shifted by 20 to 25 meV as compared to quasi-bulk (0268-1242/11/5/010/img12) samples. This effect is interpreted in terms of the compressive hydrostatic stress component which thin GaN layers experience when grown on sapphire with an AlN buffer layer.

No sodium in the vapour plumes of Enceladus.

PubMed

Schneider, Nicholas M; Burger, Matthew H; Schaller, Emily L; Brown, Michael E; Johnson, Robert E; Kargel, Jeffrey S; Dougherty, Michele K; Achilleos, Nicholas A

2009-06-25

The discovery of water vapour and ice particles erupting from Saturn's moon Enceladus fuelled speculation that an internal ocean was the source. Alternatively, the source might be ice warmed, melted or crushed by tectonic motions. Sodium chloride (that is, salt) is expected to be present in a long-lived ocean in contact with a rocky core. Here we report a ground-based spectroscopic search for atomic sodium near Enceladus that places an upper limit on the mixing ratio in the vapour plumes orders of magnitude below the expected ocean salinity. The low sodium content of escaping vapour, together with the small fraction of salt-bearing particles, argues against a situation in which a near-surface geyser is fuelled by a salty ocean through cracks in the crust. The lack of observable sodium in the vapour is consistent with a wide variety of alternative eruption sources, including a deep ocean, a freshwater reservoir, or ice. The existing data may be insufficient to distinguish between these hypotheses.

Gallium Nitride (GaN) High Power Electronics (FY11)

DTIC Science & Technology

2012-01-01

GaN films grown by metal-organic chemical vapor deposition (MOCVD) and ~1010 in films grown by molecular beam epitaxy (MBE) when they are deposited...inductively coupled plasma I-V current-voltage L-HVPE low doped HVPE MBE molecular beam epitaxy MOCVD metal-organic chemical vapor deposition...figure of merit HEMT high electron mobility transistor H-HVPE high doped HVPE HPE high power electronics HVPE hydride vapor phase epitaxy ICP

Investigation on structural, optical and electrical properties of Cp2Mg flow varied p-GaN grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Surender, S.; Pradeep, S.; Ramesh, R.

2016-05-23

In this work the effect of different concentration of Magnesium doped GaN (p-GaN) were systematically studied. The p-GaN epilayers were grown on c-plane sapphire substrate by horizontal flow Metal Organic Chemical Vapor Deposition (MOCVD) with various flow rates of 100 sccm to 300 sccm using bis-(cyclopentadienyl) - magnesium (Cp2Mg) precursor. The samples were subjected to structural, optical, morphological and electrical studies using High Resolution X-ray diffraction (HRXRD), room temperature photoluminescence (PL), Atomic Force Microscopy (AFM) and Hall measurement respectively. Results indicated that the Mg doped GaN of 200 sccm Cp2Mg has the root mean square (rms) roughness of about 0.3more » nm for a scan area of 5×5 µm{sup 2} which has good two dimensional growth. Moreover, Hall measurements results shows that (200 sccm Cp2Mg) Mg-doped GaN possess the highest hole concentration of 5.4×10{sup 17}cm{sup −3} and resistivity of 1.7 Ωcm at room temperature.« less

Prediction of vapour-liquid and vapour-liquid-liquid equilibria of nitrogen-hydrocarbon mixtures used in J-T refrigerators

NASA Astrophysics Data System (ADS)

Narayanan, Vineed; Venkatarathnam, G.

2018-03-01

Nitrogen-hydrocarbon mixtures are widely used as refrigerants in J-T refrigerators operating with mixtures, as well as in natural gas liquefiers. The Peng-Robinson equation of state has traditionally been used to simulate the above cryogenic process. Multi parameter Helmholtz energy equations are now preferred for determining the properties of natural gas. They have, however, been used only to predict vapour-liquid equilibria, and not vapour-liquid-liquid equilibria that can occur in mixtures used in cryogenic mixed refrigerant processes. In this paper the vapour-liquid equilibrium of binary mixtures of nitrogen-methane, nitrogen-ethane, nitrogen-propane, nitrogen-isobutane and three component mixtures of nitrogen-methane-ethane and nitrogen-methane-propane have been studied with the Peng-Robinson and the Helmholtz energy equations of state of NIST REFPROP and compared with experimental data available in the literature.

Influence of in-situ deposited SiNx interlayer on crystal quality of GaN epitaxial films

NASA Astrophysics Data System (ADS)

Fan, Teng; Jia, Wei; Tong, Guangyun; Zhai, Guangmei; Li, Tianbao; Dong, Hailiang; Xu, Bingshe

2018-05-01

GaN epitaxial films with SiNx interlayers were prepared by metal organic chemical vapor deposition (MOCVD) on c-plane sapphire substrates. The influences of deposition times and locations of SiNx interlayers on crystal quality of GaN epitaxial films were studied. Under the optimal growth time of 120 s for the SiNx interlayer, the dislocation density of GaN film is reduced to 4.05 × 108 cm-2 proved by high resolution X-ray diffraction results. It is found that when the SiNx interlayer deposits on the GaN nucleation islands, the subsequent GaN film has the lowest dislocation density of only 2.89 × 108 cm-2. Moreover, a model is proposed to illustrate the morphological evolution and associated propagation processes of TDs in GaN epi-layers with SiNx interlayers for different deposition times and locations.

Chemical vapour deposition growth of carbon nanotube forests: kinetics, morphology, composition, and their mechanisms

NASA Astrophysics Data System (ADS)

Vinten, Phillip

This thesis analyzes the chemical vapour deposition (CVD) growth of vertically aligned carbon nanotube (CNT) forests in order to understand how CNT forests grow, why they stop growing, and how to control the properties of the synthesized CNTs. in situ kinetics data of the growth of CNT forests are gathered by in situ optical microscopy. The overall morphology of the forests and the characteristics of the individual CNTs in the forests are investigated using scanning electron microscopy and Raman spectroscopy. The in situ data show that forest growth and termination are activated processes (with activation energies on the order of 1 eV), suggesting a possible chemical origin. The activation energy changes at a critical temperature for ethanol CVD (approximately 870°C). These activation energies and critical temperature are also seen in the temperature dependence of several important characteristics of the CNTs, including the defect density as determined by Raman spectroscopy. This observation is seen across several CVD processes and suggests a mechanism of defect healing. The CNT diameter also depends on the growth temperature. In this thesis, a thermodynamic model is proposed. This model predicts a temperature and pressure dependence of the CNT diameter from the thermodynamics of the synthesis reaction and the effect of strain on the enthalpy of formation of CNTs. The forest morphology suggests significant interaction between the constituent CNTs. These interactions may play a role in termination. The morphology, in particular a microscale rippling feature that is capable of diffracting light, suggest a non-uniform growth rate across the forest. A gas phase diffusion model predicts a non-uniform distribution of the source gas. This gas phase diffusion is suggested as a possible explanation for the non-uniform growth rate. The gas phase diffusion is important because growth by acetylene CVD is found to be very efficient (approximately 30% of the acetylene is

Intercomparison of TCCON and MUSICA Water Vapour Products

NASA Astrophysics Data System (ADS)

Weaver, D.; Strong, K.; Deutscher, N. M.; Schneider, M.; Blumenstock, T.; Robinson, J.; Notholt, J.; Sherlock, V.; Griffith, D. W. T.; Barthlott, S.; García, O. E.; Smale, D.; Palm, M.; Jones, N. B.; Hase, F.; Kivi, R.; Ramos, Y. G.; Yoshimura, K.; Sepúlveda, E.; Gómez-Peláez, Á. J.; Gisi, M.; Kohlhepp, R.; Warneke, T.; Dohe, S.; Wiegele, A.; Christner, E.; Lejeune, B.; Demoulin, P.

2014-12-01

We present an intercomparison between the water vapour products from the Total Carbon Column Observing Network (TCCON) and the MUlti-platform remote Sensing of Isotopologues for investigating the Cycle of Atmospheric water (MUSICA), two datasets from ground-based Fourier Transform InfraRed (FTIR) spectrometers with good global representation. Where possible, comparisons to radiosondes are also included. The near-infrared TCCON measurements are optimized to provide precise monitoring of greenhouse gases for carbon cycle studies; however, TCCON's retrievals also produce water vapour products. The mid-infrared MUSICA products result from retrievals optimized to give precise and accurate information about H2O, HDO, and δD. The MUSICA water vapour products have been validated by extensive intercomparisons with H2O and δD in-situ measurements made from ground, radiosonde, and aircraft (Schneider et al. 2012, 2014), as well as by intercomparisons with satellite-based H2O and δD remote sensing measurements (Wiegele et al., 2014). This dataset provides a valuable reference point for other measurements of water vapour. This study is motivated by the limited intercomparisons performed for TCCON water vapour products and limited characterisation of their uncertainties. We compare MUSICA and TCCON products to assess the potential for TCCON measurements to contribute to studies of the water cycle, water vapour's role in climate and use as a tracer for atmospheric dynamics, and to evaluate the performance of climate models. The TCCON and MUSICA products result from measurements taken using the same FTIR instruments, enabling a comparison with constant instrumentation. The retrieval techniques differ, however, in their method and a priori information. We assess the impact of these differences and characterize the comparability of the TCCON and MUSICA datasets.

MOCVD Process Technology for Affordable, High-Yield, High-Performance MESFET Structures. MIMIC Phase 3

DTIC Science & Technology

1993-01-26

by an optical pyrometer that views the inside of the susceptor through a sapphire light pipe. The gas delivery system is of standard commercial design ...of the operating conditions for MESFET growth. 2.2.2 Modifications to the Apparatus for MIMIC Spire designed and installed a bell jar capable of...withstanding, without water cooling, the 500 to 1 100’C temperatures needed for MOCVD growth. The bell jar features a flow disrupter of proprietary design

The millennium water vapour drop in chemistry-climate model simulations

NASA Astrophysics Data System (ADS)

Brinkop, Sabine; Dameris, Martin; Jöckel, Patrick; Garny, Hella; Lossow, Stefan; Stiller, Gabriele

2016-07-01

This study investigates the abrupt and severe water vapour decline in the stratosphere beginning in the year 2000 (the "millennium water vapour drop") and other similarly strong stratospheric water vapour reductions by means of various simulations with the state-of-the-art Chemistry-Climate Model (CCM) EMAC (ECHAM/MESSy Atmospheric Chemistry Model). The model simulations differ with respect to the prescribed sea surface temperatures (SSTs) and whether nudging is applied or not. The CCM EMAC is able to most closely reproduce the signature and pattern of the water vapour drop in agreement with those derived from satellite observations if the model is nudged. Model results confirm that this extraordinary water vapour decline is particularly obvious in the tropical lower stratosphere and is related to a large decrease in cold point temperature. The drop signal propagates under dilution to the higher stratosphere and to the poles via the Brewer-Dobson circulation (BDC). We found that the driving forces for this significant decline in water vapour mixing ratios are tropical sea surface temperature (SST) changes due to a coincidence with a preceding strong El Niño-Southern Oscillation event (1997/1998) followed by a strong La Niña event (1999/2000) and supported by the change of the westerly to the easterly phase of the equatorial stratospheric quasi-biennial oscillation (QBO) in 2000. Correct (observed) SSTs are important for triggering the strong decline in water vapour. There are indications that, at least partly, SSTs contribute to the long period of low water vapour values from 2001 to 2006. For this period, the specific dynamical state of the atmosphere (overall atmospheric large-scale wind and temperature distribution) is important as well, as it causes the observed persistent low cold point temperatures. These are induced by a period of increased upwelling, which, however, has no corresponding pronounced signature in SSTs anomalies in the tropics. Our free

Selective epitaxial growth of Ge1-xSnx on Si by using metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Washizu, Tomoya; Ike, Shinichi; Inuzuka, Yuki; Takeuchi, Wakana; Nakatsuka, Osamu; Zaima, Shigeaki

2017-06-01

Selective epitaxial growth of Ge and Ge1-xSnx layers on Si substrates was performed by using metal-organic chemical vapor deposition (MOCVD) with precursors of tertiary-butyl-germane (t-BGe) and tri-butyl-vinyl-tin (TBVSn). We investigated the effects of growth temperature and total pressure during growth on the selectivity and the crystallinity of the Ge and Ge1-xSnx epitaxial layers. Under low total pressure growth conditions, the dominant mechanism of the selective growth of Ge epitaxial layers is the desorption of the Ge precursors. At a high total pressure case, it is needed to control the surface migration of precursors to realize the selectivity because the desorption of Ge precursors was suppressed. The selectivity of Ge growth was improved by diffusion of the Ge precursors on the SiO2 surfaces when patterned substrates were used at a high total pressure. The selective epitaxial growth of Ge1-xSnx layer was also realized using MOCVD. We found that the Sn precursors less likely to desorb from the SiO2 surfaces than the Ge precursors.

MEDUSA (Martian Environmental DUst Systematic Analyser) for the monitoring of the Martian atmospheric dust and water vapour

NASA Astrophysics Data System (ADS)

Colangeli, L.; Battaglia, R.; della Corte, V.; Esposito, F.; Ferrini, G.; Mazzotta Epifani, E.; Palomba, E.; Palumbo, P.; Panizza, A.; Rotundi, A.

2004-03-01

The knowledge of Martian airborne dust properties and about mechanisms of dust settling/raising to/from the surface are important to determine climate and surface evolution on Mars. Water is an important tracer of climatic changes on long time-scales and is strictly related to the presence of life forms. The study in situ of dust and water vapour properties and evolution in Martian atmosphere is useful to trace back the planet climate, also in function of life form development. This investigation is also appropriate in preparation to future manned exploration of the planet (in relation to hazardous conditions). In this work we discuss the concept of the MEDUSA (Martian Environmental Dust Analyser) experiment that is designed to provide data on grain size and mass distribution, number density, velocity and scattering properties and on water vapour concentration. The instrument is a multisensor system based on optical and impact detection of grains, coupled with cumulative deposition sensors.

Nanocomposite film prepared by depositing xylan on cellulose nanowhiskers matrix

Treesearch

Qining Sun; Anurag Mandalika; Thomas Elder; Sandeep S. Nair; Xianzhi Meng; Fang Huang; Art J. Ragauskas

2014-01-01

Novel bionanocomposite films have been prepared by depositing xylan onto cellulose nanowhiskers through a pH adjustment. Analysis of strength properties, water vapour transmission, transparency, surface morphology and thermal decomposition showed the enhancement of film performance. This provides a new green route to the utilization of biomass for sustainable...

Claims in vapour device (e-cigarette) regulation: A Narrative Policy Framework analysis.

PubMed

O'Leary, Renée; Borland, Ron; Stockwell, Tim; MacDonald, Marjorie

2017-06-01

The electronic cigarette or e-cigarette (vapour device) is a consumer product undergoing rapid growth, and governments have been adopting regulations on the sale of the devices and their nicotine liquids. Competing claims about vapour devices have ignited a contentious debate in the public health community. What claims have been taken up in the state arena, and how have they possibly influenced regulatory outcomes? This study utilized Narrative Policy Framework to analyze the claims made about vapour devices in legislation recommendation reports from Queensland Australia, Canada, and the European Union, and the 2016 deeming rule legislation from the United States, and examined the claims and the regulatory outcomes in these jurisdictions. The vast majority of claims in the policy documents represented vapour devices as a threat: an unsafe product harming the health of vapour device users, a gateway product promoting youth tobacco uptake, and a quasi-tobacco product impeding tobacco control. The opportunity for vapour devices to promote cessation or reduce exposure to toxins was very rarely presented, and these positive claims were not discussed at all in two of the four documents studied. The dominant claims of vapour devices as a public health threat have supported regulations that have limited their potential as a harm reduction strategy. Future policy debates should evaluate the opportunities for vapour devices to decrease the health and social burdens of the tobacco epidemic. Copyright © 2017 Elsevier B.V. All rights reserved.

Atrial and ventricular septal changes in ethanol vapour exposed chick embryos.

PubMed

Kamran, Kiran; Khan, Muhammad Yunus; Minhas, Liaqat Ali

2015-03-01

To study the effects of ethanol vapour exposure on development of atrial and ventricular septa of chick embryo. The experimental study was conducted at the College of Physicians and Surgeons, Islamabad, from 2006 to 2007. The experimental and control groups were further divided into three subgroups based on the day of sacrifice. The experimental group was exposed to ethanol vapours produced in a specially-designed vapour chamber and then compared with age-matched controls. There were 90 eggs in each of the two groups. The development of inter-ventricular septum completed at day 7 of development in chick embryo. Ethanol vapour exposure produced a small discontinuity at day 10 of development in a chick embryo which may be labelled as ventricular septal defect since ventricular development is completed by day 7. Interatrial septum formed till day 7 with small perforations which persisted till hatching. Ethanol vapour exposure may lead to ventricular septal defect.

Sensing response of copper phthalocyanine salt dispersed glass with organic vapours

NASA Astrophysics Data System (ADS)

Ridhi, R.; Sachdeva, Sheenam; Saini, G. S. S.; Tripathi, S. K.

2016-05-01

Copper Phthalocyanine and other Metal Phthalocyanines are very flexible and tuned easily to modify their structural, spectroscopic, optical and electrical properties by either functionalizing them with various substituent groups or by replacing or adding a ligand to the central metal atom in the phthalocyanine ring and accordingly can be made sensitive and selective to various organic species or gaseous vapours. In the present work, we have dispersed Copper Phthalocyanine Salt (CuPcS) in sol-gel glass form using chemical route sol-gel method and studied its sensing mechanism with organic vapours like methanol and benzene and found that current increases onto their exposure with vapours. A variation in the activation energies was also observed with exposure of vapours.

Diode laser-induced infrared fluorescence of water vapour

NASA Astrophysics Data System (ADS)

Li, Hejie; Hanson, Ronald K.; Jeffries, Jay B.

2004-07-01

Infrared laser-induced fluorescence (LIF) of water vapour was investigated for its potential as a spatially resolved gasdynamic diagnostic. A cw diode laser operating near 1392 nm was scanned across a single absorption transition in the ngr1 + ngr3 band of H2O in a static cell, and the resulting fluorescence signal was collected near 2.7 µm (both ngr1 and ngr3 bands). Experiments were conducted at low pressure in pure water vapour and mixtures of water vapour and N2 using a 20 mW laser in a double-pass arrangement. A simple analytical model was developed to relate LIF intensity to gas properties as a function of laser power. The spectrally resolved, single-line excitation spectrum was fitted with a Voigt profile, allowing inference of the water vapour temperature from the Doppler-broadened component of the measured fluorescence lineshape. A two-line excitation scheme was also investigated as a means of measuring temperature with reduced measurement time. From these initial measurements, we estimate that a practical sensor for atmospheric pressure applications would require a minimum of 1-2 W of laser power for two-line, fixed-wavelength temperature measurements and a minimum of about 70 W of power for scanned-wavelength measurements.

The deep levels in InGaAlP epilayers grown by metalorganic chemical vapor deposition using tertiarybutylphosphine

NASA Astrophysics Data System (ADS)

Izumiya, T.; Ishikawa, H.; Mashita, M.

1994-12-01

InGaAlP epilayers and double-hetero structure light emitting diodes (LEDs) were grown by metalorganic chemical vapor deposition (MOCVD) using tertiarybutylphosphine (TBP). The photoluminescence (PL) intensities were low compared with the epilayer grown using PH 3, and depended markedly on the TBP synthesis lots. Deep levels, were studied and two oxygen related levels were observed in the epilayers with small PL intensities. An intimate relation between the deep levels and the photoluminescence (PL) intensity has been found. A larger TBP flow rate reduced the deep level concentrations and improved the PL intensity.

Formation of a pn junction on an anisotropically etched GaAs surface using metalorganic chemical vapor deposition

NASA Technical Reports Server (NTRS)

Leon, R. P.; Bailey, S. G.; Mazaris, G. A.; Williams, W. D.

1986-01-01

A continuous p-type GaAs epilayer has been deposited on an n-type sawtooth GaAs surface using MOCVD. A wet chemical etching process was used to expose the intersecting (111)Ga and (-1 -1 1)Ga planes with 6-micron periodicity. Charge-collection microscopy was used to verify the presence of the pn junction thus formed and to measure its depth. The ultimate goal of this work is to fabricate a V-groove GaAs cell with improved absorptivity, high short-circuit current, and tolerance to particle radiation.

Sensing response of copper phthalocyanine salt dispersed glass with organic vapours

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ridhi, R.; Sachdeva, Sheenam; Saini, G. S. S.

2016-05-06

Copper Phthalocyanine and other Metal Phthalocyanines are very flexible and tuned easily to modify their structural, spectroscopic, optical and electrical properties by either functionalizing them with various substituent groups or by replacing or adding a ligand to the central metal atom in the phthalocyanine ring and accordingly can be made sensitive and selective to various organic species or gaseous vapours. In the present work, we have dispersed Copper Phthalocyanine Salt (CuPcS) in sol-gel glass form using chemical route sol-gel method and studied its sensing mechanism with organic vapours like methanol and benzene and found that current increases onto their exposuremore » with vapours. A variation in the activation energies was also observed with exposure of vapours.« less

Vapour phase motion in cryogenic systems containing superheated and subcooled liquids

NASA Astrophysics Data System (ADS)

Kirichenko, Yu. A.; Chernyakov, P. S.; Seregin, V. E.

The development of vent pipelines, and venting storage tanks for cryogenic liquids requires the knowledge of the law of motion as well as regularities of vapour content variation in the liquid and heat dissipation by the vapour phase. This is a theoretical study of the effect of superheating (subcooling) of the liquid, relative acceleration and reduced pressure upon the size and velocity of noninteracting vapour bubbles, moving in the liquid, and upon their resistance and heat transfer coefficients.

Optimization of structural and growth parameters of metamorphic InGaAs photovoltaic converters grown by MOCVD

DOE Office of Scientific and Technical Information (OSTI.GOV)

Rybalchenko, D. V.; Mintairov, S. A.; Salii, R. A.

Metamorphic Ga{sub 0.76}In{sub 0.24}As heterostructures for photovoltaic converters are grown by the MOCVD (metal–organic chemical vapor deposition) technique. It is found that, due to the valence-band offset at the p-In{sub 0.24}Al{sub 0.76}As/p-In{sub 0.24}Ga{sub 0.76}As (wide-gap window/emitter) heterointerface, a potential barrier for holes arises as a result of a low carrier concentration in the wide-gap material. The use of an InAlGaAs solid solution with an Al content lower than 40% makes it possible to raise the hole concentration in the widegap window up ~9 × 10{sup 18} cm{sup –3} and completely remove the potential barrier, thereby reducing the series resistance ofmore » the device. The parameters of an GaInAs metamorphic buffer layer with a stepwise In content profile are calculated and its epitaxial growth conditions are optimized, which improves carrier collection from the n-GaInAs base region and provides a quantum efficiency of 83% at a wavelength of 1064 nm. Optimization of the metamorphic heterostructure of the photovoltaic converter results in that its conversion efficiency for laser light with a wavelength of 1064 nm is 38.5%.« less

A water vapour monitor at Paranal Observatory

NASA Astrophysics Data System (ADS)

Kerber, Florian; Rose, Thomas; Chacón, Arlette; Cuevas, Omar; Czekala, Harald; Hanuschik, Reinhard; Momany, Yazan; Navarrete, Julio; Querel, Richard R.; Smette, Alain; van den Ancker, Mario E.; Cure, Michel; Naylor, David A.

2012-09-01

We present the performance characteristics of a water vapour monitor that has been permanently deployed at ESO's Paranal observatory as a part of the VISIR upgrade project. After a careful analysis of the requirements and an open call for tender, the Low Humidity and Temperature Profiling microwave radiometer (LHATPRO), manufactured by Radiometer Physics GmbH (RPG), has been selected. The unit measures several channels across the strong water vapour emission line at 183 GHz, necessary for resolving the low levels of precipitable water vapour (PWV) that are prevalent on Paranal (median ~2.5 mm). The unit comprises the above humidity profiler (183-191 GHz), a temperature profiler (51-58 GHz), and an infrared radiometer (~10 μm) for cloud detection. The instrument has been commissioned during a 2.5 week period in Oct/Nov 2011, by comparing its measurements of PWV and atmospheric profiles with the ones obtained by 22 radiosonde balloons. In parallel an IR radiometer (Univ. Lethbridge) has been operated, and various observations with ESO facility spectrographs have been taken. The RPG radiometer has been validated across the range 0.5 - 9 mm demonstrating an accuracy of better than 0.1 mm. The saturation limit of the radiometer is about 20 mm. Currently, the radiometer is being integrated into the Paranal infrastructure to serve as a high time-resolution monitor in support of VLT science operations. The water vapour radiometer's ability to provide high precision, high time resolution information on this important aspect of the atmosphere will be most useful for conducting IR observations with the VLT under optimal conditions.

Stratospheric water vapour in the vicinity of the Arctic polar vortex

NASA Astrophysics Data System (ADS)

Maturilli, M.; Fierli, F.; Yushkov, V.; Lukyanov, A.; Khaykin, S.; Hauchecorne, A.

2006-07-01

The stratospheric water vapour mixing ratio inside, outside, and at the edge of the polar vortex has been accurately measured by the FLASH-B Lyman-Alpha hygrometer during the LAUTLOS campaign in Sodankylä, Finland, in January and February 2004. The retrieved H2O profiles reveal a detailed view on the Arctic lower stratospheric water vapour distribution, and provide a valuable dataset for the validation of model and satellite data. Analysing the measurements with the semi-lagrangian advection model MIMOSA, water vapour profiles typical for the polar vortex' interior and exterior have been identified, and laminae in the observed profiles have been correlated to filamentary structures in the potential vorticity field. Applying the validated MIMOSA transport scheme to specific humidity fields from operational ECMWF analyses, large discrepancies from the observed profiles arise. Although MIMOSA is able to reproduce weak water vapour filaments and improves the shape of the profiles compared to operational ECMWF analyses, both models reveal a dry bias of about 1 ppmv in the lower stratosphere above 400 K, accounting for a relative difference from the measurements in the order of 20%. The large dry bias in the analysis representation of stratospheric water vapour in the Arctic implies the need for future regular measurements of water vapour in the polar stratosphere to allow the validation and improvement of climate models.

Effect of Ag doping on the structural, electrical and optical properties of ZnO grown by MOCVD at different substrate temperatures

NASA Astrophysics Data System (ADS)

Ievtushenko, A.; Karpyna, V.; Eriksson, J.; Tsiaoussis, I.; Shtepliuk, I.; Lashkarev, G.; Yakimova, R.; Khranovskyy, V.

2018-05-01

ZnO films and nanostructures were deposited on Si substrates by MOCVD using single source solid state zinc acetylacetonate (Zn(AA)) precursor. Doping by silver was realized in-situ via adding 1 and 10 wt. % of Ag acetylacetonate (Ag(AA)) to zinc precursor. Influence of Ag on the microstructure, electrical and optical properties of ZnO at temperature range 220-550 °C was studied by scanning, transmission electron and Kelvin probe force microscopy, photoluminescence and four-point probe electrical measurements. Ag doping affects the ZnO microstructure via changing the nucleation mode into heterogeneous and thus transforming the polycrystalline films into a matrix of highly c-axis textured hexagonally faceted nanorods. Increase of the work function value from 4.45 to 4.75 eV was observed with Ag content increase, which is attributed to Ag behaviour as a donor impurity. It was observed, that near-band edge emission of ZnO NS was enhanced with Ag doping as a result of quenching deep-level emission. Upon high doping of ZnO by Ag it tends to promote the formation of basal plane stacking faults defect, as it was observed by HR TEM and PL study in the case of 10 wt.% of Ag. Based on the results obtained, it is suggested that NS deposition at lower temperatures (220-300 °C) is more favorable for p-type doping of ZnO.

Structural and environmental dependence of superlow friction in ion vapour-deposited a-C : H : Si films for solid lubrication application

NASA Astrophysics Data System (ADS)

Chen, Xinchun; Kato, Takahisa; Kawaguchi, Masahiro; Nosaka, Masataka; Choi, Junho

2013-06-01

Understanding the tribochemical interaction of water molecules in humid environment with carbonaceous film surfaces, especially hydrophilic surface, is fundamental for applications in tribology and solid lubrication. This paper highlights some experimental evidence to elucidate the structural and environmental dependence of ultralow or even superlow friction in ion vapour-deposited a-C : H : Si films. The results indicate that both surface density of silicon hydroxyl group (Si-OH) and humidity level (RH) determine the frictional performance of a-C : H : Si films. Ultralow friction coefficient μ (˜0.01-0.055) is feasible in a wide range of RH. The dissociative formation of hydrophilic Si-OH surface and the following nanostructure of interfacial water molecules under contact pressure are the origin of ultralow friction for a-C : H : Si films in humid environment. The correlation between contact pressure and friction coefficient derived from Hertzian contact model is not valid in the present case. Under this nanoscale boundary lubrication, the friction coefficient tends to increase as the contact pressure increases. There even exists a contact pressure threshold for the transition from ultralow to superlow friction (μ ˜ 0.007). In comparison, when tribotested in dry N2, the observed superlow friction (μ ˜ 0.004) in the absence of water is correlated with the formation of a low shear strength tribolayer by wear-induced phase transformation.

Deposition of plasmon gold-fluoropolymer nanocomposites

NASA Astrophysics Data System (ADS)

Safonov, Alexey I.; Sulyaeva, Veronica S.; Timoshenko, Nikolay I.; Kubrak, Konstantin V.; Starinskiy, Sergey V.

2016-12-01

Degradation-resistant two-dimensional metal-fluoropolymer composites consisting of gold nanoparticles coated with a thin fluoropolymer film were deposited on a substrate by hot wire chemical vapour deposition (HWCVD) and ion sputtering. The morphology and optical properties of the obtained coatings were determined. The thickness of the thin fluoropolymer film was found to influence the position of the surface plasmon resonance peak. Numerical calculations of the optical properties of the deposited materials were performed using Mie theory and the finite-difference time-domain (FDTD) method. The calculation results are consistent with the experimental data. The study shows that the position of the resonance peak can be controlled by changing the surface concentration of particles and the thickness of the fluoropolymer coating. The protective coating was found to prevent the plasmonic properties of the nanoparticles from changing for several months.

The impact of multiphase behaviour on coke deposition in heavy oil hydroprocessing catalysts

NASA Astrophysics Data System (ADS)

Zhang, Xiaohui

Coke deposition in heavy oil catalytic hydroprocessing remains a serious problem. The influence of multiphase behaviour on coke deposition is an important but unresolved question. A model heavy oil system (Athabasca vacuum bottoms (ABVB) + decane) and a commercial heavy oil hydrotreating catalyst (NiMo/gamma-Al 2O3) were employed to study the impact of multiphase behaviour on coke deposition. The model heavy oil mixture exhibits low-density liquid + vapour (L1V), high-density liquid + vapour (L2V), as well as low-density liquid + high-density liquid + vapour (L1L2V) phase behaviour at a typical hydroprocessing temperature (380°C). The L2 phase only arises for the ABVB composition range from 10 to 50 wt %. The phase behaviour undergoes transitions from V to L2V, to L1L2V, to L1V with increasing ABVB compositions at the pressure examined. The addition of hydrogen into the model heavy oil mixtures at a fixed mass ratio (0.0057:1) does not change the phase behaviour significantly, but shifts the phase regions and boundaries vertically from low pressure to high pressure. In the absence of hydrogen, the carbon content, surface area and pore volume losses for catalyst exposed to the L1 phase are greater than for the corresponding L2 phase despite a higher coke precursor concentration in L2 than in L1. By contrast, in the presence of hydrogen, the carbon content, surface area and pore volume losses for the catalyst exposed to the L2 phase are greater than for the corresponding L1 phase. The higher hydrogen concentration in L1 appears to reverse the observed results. In the presence of hydrogen, L2 was most closely associated with coke deposition, L1 less associated with coke deposition, and V least associated with coke deposition. Coke deposition is maximized in the phase regions where the L2 phase arises. This key result is inconsistent with expectation and coke deposition models where the extent of coke deposition, at otherwise fixed reaction conditions, is asserted to

Study of recombination characteristics in MOCVD grown GaN epi-layers on Si

NASA Astrophysics Data System (ADS)

Gaubas, E.; Ceponis, T.; Dobrovolskas, D.; Malinauskas, T.; Meskauskaite, D.; Miasojedovas, S.; Mickevicius, J.; Pavlov, J.; Rumbauskas, V.; Simoen, E.; Zhao, M.

2017-12-01

The radiative and non-radiative recombination carrier decay lifetimes in GaN epi-layers grown by metal-organic chemical vapour deposition technology on Si substrates were measured by contactless techniques of time-resolved photoluminescence and microwave-probed transients of photoconductivity. The lifetime variations were obtained to be dependent on growth regimes. These variations have been related to varied densities of edge dislocations associated with growth temperature. It has been also revealed that the lateral carrier lifetime and photoluminescence intensity distribution is determined by the formation of dislocation clusters dependent on the growth conditions. For low excitation level, the asymptotic component within the excess carrier decay transients is attributed to carrier trapping and anomalous diffusion through random-walk processes within dislocation cluster regions and barriers at dislocation cores. The two-componential decay process at high excitation conditions, where excess carriers may suppress barriers, proceeds through a nonlinear recombination, where band-to-band transitions determine the nonlinearity of the process, while the asymptotic component is ascribed to the impact of D-A pair PL within the long-wavelength wing of the UV-PL band.

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.

2016-01-07

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupledmore » plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.« less

A dilute Cu(Ni) alloy for synthesis of large-area Bernal stacked bilayer graphene using atmospheric pressure chemical vapour deposition

NASA Astrophysics Data System (ADS)

Madito, M. J.; Bello, A.; Dangbegnon, J. K.; Oliphant, C. J.; Jordaan, W. A.; Momodu, D. Y.; Masikhwa, T. M.; Barzegar, F.; Fabiane, M.; Manyala, N.

2016-01-01

A bilayer graphene film obtained on copper (Cu) foil is known to have a significant fraction of non-Bernal (AB) stacking and on copper/nickel (Cu/Ni) thin films is known to grow over a large-area with AB stacking. In this study, annealed Cu foils for graphene growth were doped with small concentrations of Ni to obtain dilute Cu(Ni) alloys in which the hydrocarbon decomposition rate of Cu will be enhanced by Ni during synthesis of large-area AB-stacked bilayer graphene using atmospheric pressure chemical vapour deposition. The Ni doped concentration and the Ni homogeneous distribution in Cu foil were confirmed with inductively coupled plasma optical emission spectrometry and proton-induced X-ray emission. An electron backscatter diffraction map showed that Cu foils have a single (001) surface orientation which leads to a uniform growth rate on Cu surface in early stages of graphene growth and also leads to a uniform Ni surface concentration distribution through segregation kinetics. The increase in Ni surface concentration in foils was investigated with time-of-flight secondary ion mass spectrometry. The quality of graphene, the number of graphene layers, and the layers stacking order in synthesized bilayer graphene films were confirmed by Raman and electron diffraction measurements. A four point probe station was used to measure the sheet resistance of graphene films. As compared to Cu foil, the prepared dilute Cu(Ni) alloy demonstrated the good capability of growing large-area AB-stacked bilayer graphene film by increasing Ni content in Cu surface layer.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory.

PubMed

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In 2 Ga 2 ZnO 7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO 2 (blocking oxide)/p ++ -Si (control gate) substrate, where 3 nm thick atomic layer deposited Al 2 O 3 (tunneling oxide) and 5 nm thick low-pressure CVD Si 3 N 4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F ) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

In2Ga2ZnO7 oxide semiconductor based charge trap device for NAND flash memory

NASA Astrophysics Data System (ADS)

Hwang, Eun Suk; Kim, Jun Shik; Jeon, Seok Min; Lee, Seung Jun; Jang, Younjin; Cho, Deok-Yong; Hwang, Cheol Seong

2018-04-01

The programming characteristics of charge trap flash memory device adopting amorphous In2Ga2ZnO7 (a-IGZO) oxide semiconductors as channel layer were evaluated. Metal-organic chemical vapor deposition (MOCVD) and RF-sputtering processes were used to grow a 45 nm thick a-IGZO layer on a 20 nm thick SiO2 (blocking oxide)/p++-Si (control gate) substrate, where 3 nm thick atomic layer deposited Al2O3 (tunneling oxide) and 5 nm thick low-pressure CVD Si3N4 (charge trap) layers were intervened between the a-IGZO and substrate. Despite the identical stoichiometry and other physicochemical properties of the MOCVD and sputtered a-IGZO, a much faster programming speed of MOCVD a-IGZO was observed. A comparable amount of oxygen vacancies was found in both MOCVD and sputtered a-IGZO, confirmed by x-ray photoelectron spectroscopy and bias-illumination-instability test measurements. Ultraviolet photoelectron spectroscopy analysis revealed a higher Fermi level (E F) of the MOCVD a-IGZO (∼0.3 eV) film than that of the sputtered a-IGZO, which could be ascribed to the higher hydrogen concentration in the MOCVD a-IGZO film. Since the programming in a flash memory device is governed by the tunneling of electrons from the channel to charge trapping layer, the faster programming performance could be the result of a higher E F of MOCVD a-IGZO.

MOCVD growth and study of thin films of indium nitride

NASA Astrophysics Data System (ADS)

Jain, Abhishek

This thesis is focused on a study of MOCVD growth of InN with the goal of providing new information on the effects of growth conditions and buffer/substrate materials on InN film properties. Initial studies, using both (111) Si and (0001) sapphire substrates, identified an optimum growth temperature window of 540--560°C for the formation of stable InN films. When attempting to grow InN films on sapphire with thicknesses greater than approximately 150 nanometers using an AlN buffer layer, the InN films were observed to delaminate from the buffer/substrate at growth temperature. The combined effect of compressive stress due to high lattice mismatch between InN and AlN (˜14%) and tensile stress due to grain coalescence along with the relatively weak bond strength of InN compared to GaN and AlN, is believed to cause the InN film to crack along the interface and delaminate. To further investigate the effect of the buffer layer on InN growth, studies were carried out using GaN films grown on sapphire as the growth template. Recent MBE results had indicated a significant difference in the thermal stability and growth mode of In-polar and N-polar InN, with improved properties reported for N-polar material grown on N-polar GaN. MOCVD growth of N-polar GaN is very difficult; consequently, all of the results reported in the literature for InN growth on GaN were likely carried out on Ga-polar material resulting in films with a high surface roughness. By utilizing N-polar and Ga-polar GaN films, it was possible to produce N-polar and In-polar InN films by MOCVD, as determined by convergent beam electron diffraction (CBED) analysis. Furthermore, the polarity was found to dramatically alter the surface roughness and growth mode of the InN films with enhanced lateral growth and reduced surface roughness obtained for N-polar InN. A qualitative model was proposed to explain the different growth mechanisms observed for In-polar and N-polar InN. In spite of the improvements in

Design of a safe facility for the metalorganic chemical vapor deposition of high-purity GaAs and AlGaAs

NASA Astrophysics Data System (ADS)

Messham, R. L.; Tucker, W. K.

1986-09-01

A metalorganic chemical vapor deposition (MOCVD) facility designed to safely handle highly toxic and pyrophoric growth materials is described. The system concept is based on remote operation, passive flow restriction, and forced air dilution to maintain safe gas concentrations under normal running and catastrophic system failure conditions. MOCVD is a key materials technology for advanced high-frequency optical and microwave devices. At this time, the use of highly toxic arsine as an arsenic source is dictated by critical device purity, reproducibility, and doping control requirements. The handling and use of this gas is a primary feature in the design of any safe facility for MOCVD growth of high-quality GaAs/AlGaAs. After a critical review of presently available effluent treatment techniques, it was concluded that a combination of flow restriction and dilution presented the most reliable treatment. Measured flow rates through orifices from 0.002 to 0.005 inch in diameter were compared to calculated values. A 0.002 inch orifice located in the cylinder valve or CGA fitting, combined with a cylinder of pure liquid arsine (205 psi), limits the maximum gas flow to ≪1 lpm. Such a flow can then be vented through a dedicated exhaust system where an additional forced injection of diluting air reduces the gas concentration to acceptable levels. In the final Westinghouse R&D Center design, the use of low-pressure pure arsine, flow restriction, and stack air injection has reduced the maximum stack exist gas concentration to below 25% of the IDLH level for arsine under total and catastrophic MOCVD facility equipment failure conditions. The elimination of potential problems with purging behind such orifices using carefully designed purging procedures and a microprocessor-controlled purging system are described. The IDLH level is defined by the OSHA and NIOSH standards completion program and represents the maximum level from which one could escape within 30 min without any

The dynamic effects of metal vapour in gas metal arc welding

NASA Astrophysics Data System (ADS)

Haidar, Jawad

2010-04-01

Numerical simulations for the dynamic effects of metal vapour in gas metal arc welding (GMAW) suggest that vapour from the welding droplet at the tip of the welding wire has a significant influence on the plasma properties. It is found that for the evaporation rates calculated for arcs in pure argon, the dynamic effects of metal vapour markedly cool down the plasma in the central region of the arc, leading to the formation of a low temperature zone centred on the arc axis, in agreement with experimental measurements in the literature. Radiation effects, omitted in this paper, may produce further cooling of the plasma gas. The results highlight major deficiencies in the common approach to modelling the GMAW process and suggest that accurate description of GMAW must include the influence of metal vapour on the plasma.

GPS tomographic experiment on water vapour dynamics in the troposphere over Lisbon

NASA Astrophysics Data System (ADS)

Benevides, Pedro; Catalao, Joao; Miranda, Pedro

2015-04-01

Quantification of the water vapour variability on the atmosphere remains a difficult task, affecting the weather prediction. Coarse water vapour resolution measurements in space and time affect the numerical weather prediction solution models causing artifacts in the prediction of severe weather phenomena. The GNSS atmospheric processing has been developed in the past years providing integrated water vapour estimates comparable with the meteorological sensor measurements, with studies registering 1 to 2 kg/m2 bias, but lack a vertical determination of the atmospheric processes. The GNSS tomography in the troposphere is one of the most promising techniques for sensing the three-dimensional water vapour state of the atmosphere. The determination of the integrated water vapour profile by means of the widely accepted GNSS meteorology techniques, allows the reconstruction of several slant path delay rays in the satellite line of view, providing an opportunity to sense the troposphere at tree-dimensions plus time. The tomographic system can estimate an image solution of the water vapour but impositions have to be introduced to the system of equations inversion because of the non-optimal GNSS observation geometry. Application of this technique on atmospheric processes like large convective precipitation or mesoscale water vapour circulation have been able to describe its local dynamic vertical variation. A 3D tomographic experiment was developed over an area of 60x60 km2 around Lisbon (Portugal). The GNSS network available composed by 9 receivers was used for an experiment of densification of the permanent network using 8 temporarily installed GPS receivers (totalling 17 stations). This study was performed during several weeks in July 2013, where a radiosonde campaign was also held in order to validate the tomographic inversion solution. 2D integrated water vapour maps directly obtained from the GNSS processing were also evaluated and local coastal breeze circulation

Measurements of the levels of organic solvent vapours by personal air samplers and the levels of urinary metabolites of workers. Part 2. Toluene vapour in a shipbuilding yard (author's transl).

PubMed

Kira, S

1977-05-01

Personal air samplers were applied to shipyard's painters putting on gas masks during the spraying work, and the levels of toluene vapour surrounding the workers were measured. On the other hand, levels of urinary hippuric acid (metabolites of toluene) of the workers were measured, and the levels of toluene vapour inhaled were calculated from the levels of urinary hippuric acid. Then the actual removing-efficiencies of toluene vapours by the use of gas masks were estimated from these two levels (i.e., toluene vapours exposed and inhaled). The values of removing-efficiencies were found to be 65.9-98.1%. The concentrations of hippuric and methylhippuric acids in the urine of workers exposed to toluene and xylene for 3 hours, collected just after the exposure, are valuable indices of these organic solvent vapours inhaled. A minute amount of urinary methylhippuric acid can be determined by means of gas chromatography.

High speed, mask-less, laser controlled deposition of microscale tungsten tracks using 405 nm wavelength diode laser

NASA Astrophysics Data System (ADS)

Ten, Jyi Sheuan; Sparkes, Martin; O'Neill, William

2017-02-01

A rapid, mask-less deposition technique for the deposition of conductive tracks to nano- and micro-devices has been developed. The process uses a 405 nm wavelength laser diode for the direct deposition of tungsten tracks on silicon substrates via laser assisted chemical vapour deposition. Unlike lithographic processes this technique is single step and does not require chemical masks that may contaminate the substrate. To demonstrate the process, tungsten was deposited from tungsten hexacarbonyl precursors to produce conductive tracks with widths of 1.7-28 μm and heights of 0.05-35 μm at laser scan speeds up to 40 μm/s. The highest volumetric deposition rate achieved is 1×104 μm3/s, three orders of magnitude higher than that of focused ion beam deposition and on par with a 515 nm wavelength argon ion laser previously reported as the laser source. The microstructure and elemental composition of the deposits are comparable to that of largearea chemical vapour deposition methods using the same chemical precursor. The contact resistance and track resistance of the deposits has been measured using the transfer length method to be 205 μΩ cm. The deposition temperature has been estimated at 334 °C from a laser heat transfer model accounting for temperature dependent optical and physical properties of the substrate. The peak temperatures achieved on silicon and other substrates are higher than the thermal dissociation temperature of numerous precursors, indicating that this technique can also be used to deposit other materials such as gold and platinum on various substrates.

Metalorganic chemical vapor deposition of AlGaAs and InGaP heterojunction bipolar transistors

NASA Astrophysics Data System (ADS)

Pan, N.; Welser, R. E.; Lutz, C. R.; DeLuca, P. M.; Han, B.; Hong, K.

2001-05-01

Heterojunction bipolar transistors (HBT) are now beginning to be widely incorporated as power amplifiers, laser drivers, multiplexers, clock data recovery circuits, as well as transimpedance and broadband amplifiers in high performance millimeter wave circuits (MMICs). The increasing acceptance of this device is principally due to advancements in metalorganic chemical vapor deposition (MOCVD), device processing, and circuit design technologies. Many of the DC electrical characteristics of large area devices can be directly correlated to the DC performance of small area RF devices. A precise understanding of the growth parameters and their relationship to device characteristics is critical for ensuring the high degree of reproducibility required for low cost high-yield volume manufacturing. Significant improvements in the understanding of the MOCVD growth process have been realized through the implementation of statistical process control on the key HBT device parameters. This tool has been successfully used to maintain the high quality of the device characteristics in high-volume production of 4″ GaAs-based HBTs. There is a growing demand to migrate towards 6″ diameter wafer size due to the potential cost reductions and increased volume production that can be realized. Preliminary results, indicating good heterostructure layer characteristics, demonstrate the feasibility of 6″ InGaP-based HBT devices.

Structure, morphology and Raman and optical spectroscopic analysis of In1-xCuxP thin films grown by MOCVD technique for solar cell applications

NASA Astrophysics Data System (ADS)

Alshahrie, Ahmed; Juodkazis, S.; Al-Ghamdi, A. A.; Hafez, M.; Bronstein, L. M.

2017-10-01

Nanocrystalline In1-xCuxP thin films (0 ≤ x ≤ 0.5) have been deposited on quartz substrates by a Metal-Organic Chemical Vapor Deposition (MOCVD) technique. The effect of the copper ion content on the structural crystal lattice, morphology and optical behavior of the InP thin films was assessed using X-ray diffraction, scanning electron microscopy, atomic force microscopy, Raman spectroscopy and spectrophotometry. All films exhibited a crystalline cubic zinc blende structure, inferring the solubility of the Cu atoms in the InP crystal structure. The XRD patterns demonstrated that the inclusion of Cu atoms into the InP films forced the nanoparticles in the films to grow along the (1 1 1) direction. The AFM topography showed that the Cu ions reduce the surface roughness of deposited films. The Raman spectra of the deposited films contain the first and second order anti-stoke ΓTO, ΓLO, ΧLO + ΧTO, 2ΓTO, and ΓLO + ΓTO bands which are characteristic of the InP crystalline structure. The intensities of these bands decreased with increasing the content of the Cu atoms in the InP crystals implying the creation of a stacking fault density in the InP crystal structure. The In1-xCuxP thin films have shown high optical transparency of 90%. An increase of the optical band gap from 1.38 eV to 1.6 eV was assigned to the increase of the amount of Cu ions in the InP films. The In0.5Cu0.5P thin film exhibited remarkable optical conductivity with very low dissipation factor which makes it a promising buffer window for solar energy applications.

Heteroepitaxial growth of Ba1 - xSrxTiO3/YBa2Cu3O7 - x by plasma-enhanced metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Chern, C. S.; Liang, S.; Shi, Z. Q.; Yoon, S.; Safari, A.; Lu, P.; Kear, B. H.; Goodreau, B. H.; Marks, T. J.; Hou, S. Y.

1994-06-01

Epitaxial Ba1-xSrxTiO3(BST)/YBa2Cu3O7-x heterostructures with superior electrical and dielectric properties have been fabricated by plasma-enhanced metalorganic chemical vapor deposition (PE-MOCVD). Data of x-ray diffraction and high resolution transmission electron microscopy showed that <100> oriented Ba1-xSrxTiO3 layers were epitaxially deposited on epitaxial (001) YBa2Cu3O7-x layers. The leakage current density through the Ba1-xSrxTiO3 films was about 10-7 A/cm2 at 2 V (about 2×105 V/cm) operation. Moreover, the results of capacitance-temperature measurements showed that the PE-MOCVD Ba1-xSrxTiO3 films had Curie temperatures of about 30 °C and a peak dielectric constant of 600 at zero bias voltage. The Rutherford backscattering spectrometry and x-ray diffraction results showed that the BST film composition was controlled between Ba0.75Sr0.25TiO3 and Ba0.8Sr0.2TiO3. The structural and electrical properties of the Ba1-xSrxTiO3/YBa2Cu3O7-x heterostructure indicated that conductive oxide materials with close lattice to Ba1-xSrxTiO3 can be good candidates for the bottom electrode.

Vertical structure of stratospheric water vapour trends derived from merged satellite data

PubMed Central

Hegglin, M. I.; Plummer, D. A.; Shepherd, T. G.; Scinocca, J. F.; Anderson, J.; Froidevaux, L.; Funke, B.; Hurst, D.; Rozanov, A.; Urban, J.; von Clarmann, T.; Walker, K. A.; Wang, H. J.; Tegtmeier, S.; Weigel, K.

2017-01-01

Stratospheric water vapour is a powerful greenhouse gas. The longest available record from balloon observations over Boulder, Colorado, USA shows increases in stratospheric water vapour concentrations that cannot be fully explained by observed changes in the main drivers, tropical tropopause temperatures and methane. Satellite observations could help resolve the issue, but constructing a reliable long-term data record from individual short satellite records is challenging. Here we present an approach to merge satellite data sets with the help of a chemistry-climate model nudged to observed meteorology. We use the models' water vapour as a transfer function between data sets that overcomes issues arising from instrument drift and short overlap periods. In the lower stratosphere, our water vapour record extends back to 1988 and water vapour concentrations largely follow tropical tropopause temperatures. Lower and mid-stratospheric long-term trends are negative, and the trends from Boulder are shown not to be globally representative. In the upper stratosphere, our record extends back to 1986 and shows positive long-term trends. The altitudinal differences in the trends are explained by methane oxidation together with a strengthened lower-stratospheric and a weakened upper-stratospheric circulation inferred by this analysis. Our results call into question previous estimates of surface radiative forcing based on presumed global long-term increases in water vapour concentrations in the lower stratosphere. PMID:29263751

Vertical structure of stratospheric water vapour trends derived from merged satellite data.

PubMed

Hegglin, M I; Plummer, D A; Shepherd, T G; Scinocca, J F; Anderson, J; Froidevaux, L; Funke, B; Hurst, D; Rozanov, A; Urban, J; von Clarmann, T; Walker, K A; Wang, H J; Tegtmeier, S; Weigel, K

2014-01-01

Stratospheric water vapour is a powerful greenhouse gas. The longest available record from balloon observations over Boulder, Colorado, USA shows increases in stratospheric water vapour concentrations that cannot be fully explained by observed changes in the main drivers, tropical tropopause temperatures and methane. Satellite observations could help resolve the issue, but constructing a reliable long-term data record from individual short satellite records is challenging. Here we present an approach to merge satellite data sets with the help of a chemistry-climate model nudged to observed meteorology. We use the models' water vapour as a transfer function between data sets that overcomes issues arising from instrument drift and short overlap periods. In the lower stratosphere, our water vapour record extends back to 1988 and water vapour concentrations largely follow tropical tropopause temperatures. Lower and mid-stratospheric long-term trends are negative, and the trends from Boulder are shown not to be globally representative. In the upper stratosphere, our record extends back to 1986 and shows positive long-term trends. The altitudinal differences in the trends are explained by methane oxidation together with a strengthened lower-stratospheric and a weakened upper-stratospheric circulation inferred by this analysis. Our results call into question previous estimates of surface radiative forcing based on presumed global long-term increases in water vapour concentrations in the lower stratosphere.

Water vapour correction of the daily 1 km AVHRR global land dataset: Part I validation and use of the Water Vapour input field

USGS Publications Warehouse

DeFelice, Thomas P.; Lloyd, D.; Meyer, D.J.; Baltzer, T. T.; Piraina, P.

2003-01-01

An atmospheric correction algorithm developed for the 1 km Advanced Very High Resolution Radiometer (AVHRR) global land dataset was modified to include a near real-time total column water vapour data input field to account for the natural variability of atmospheric water vapour. The real-time data input field used for this study is the Television and Infrared Observational Satellite (TIROS) Operational Vertical Sounder (TOVS) Pathfinder A global total column water vapour dataset. It was validated prior to its use in the AVHRR atmospheric correction process using two North American AVHRR scenes, namely 13 June and 28 November 1996. The validation results are consistent with those reported by others and entail a comparison between TOVS, radiosonde, experimental sounding, microwave radiometer, and data from a hand-held sunphotometer. The use of this data layer as input to the AVHRR atmospheric correction process is discussed.

Ab initio molecular dynamics of atomic-scale surface reactions: insights into metal organic chemical vapor deposition of AlN on graphene.

PubMed

Sangiovanni, D G; Gueorguiev, G K; Kakanakova-Georgieva, A

2018-06-19

Metal organic chemical vapor deposition (MOCVD) of group III nitrides on graphene heterostructures offers new opportunities for the development of flexible optoelectronic devices and for the stabilization of conceptually-new two-dimensional materials. However, the MOCVD of group III nitrides is regulated by an intricate interplay of gas-phase and surface reactions that are beyond the resolution of experimental techniques. We use density-functional ab initio molecular dynamics (AIMD) with van der Waals corrections to identify atomistic pathways and associated electronic mechanisms driving precursor/surface reactions during metal organic vapor phase epitaxy at elevated temperatures of aluminum nitride on graphene, considered here as model case study. The results presented provide plausible interpretations of atomistic and electronic processes responsible for delivery of Al, C adatoms, and C-Al, CHx, AlNH2 admolecules on pristine graphene via precursor/surface reactions. In addition, the simulations reveal C adatom permeation across defect-free graphene, as well as exchange of C monomers with graphene carbon atoms, for which we obtain rates of ∼0.3 THz at typical experimental temperatures (1500 K), and extract activation energies Eexca = 0.28 ± 0.13 eV and attempt frequencies Aexc = 2.1 (×1.7±1) THz via Arrhenius linear regression. The results demonstrate that AIMD simulations enable understanding complex precursor/surface reaction mechanisms, and thus propose AIMD to become an indispensable routine prediction-tool toward more effective exploitation of chemical precursors and better control of MOCVD processes during synthesis of functional materials.

Spectroscopic interaction studies of substituted and unsubstituted copper phthalocyanine with adsorbed organic vapours

NASA Astrophysics Data System (ADS)

Ridhi, R.; Kang, Jasmeen; Saini, G. S. S.; Tripathi, S. K.

2018-05-01

The present study deals with comparing the interaction mechanism of adsorbed organic vapours with Copper Phthalocyanine thin films in its substituted and unsubstituted forms. For this purpose, the variations in vibrational levels of substituted CuPc (CuPcS) functionalized with tetrasulfonic acid tetrasodium salt and unsubstituted CuPc after exposure with methanol and benzene vapours is analyzed. Fourier transform infrared (FTIR) is used to study the interaction behaviour. The bulkier group tetrasulfonic acid tetrasodium salt added to CuPc leads to occupation of more space in the molecular arrangement as compared to unsubstituted CuPc and hence alteration of its properties. FTIR spectra of CuPc and CuPcS before and after vapours exposures highlighted the effect of these vapours on the various bonds and the role of functional group in altering the molecular structure of CuPcS during interaction with adsorbed vapours.

Antifungal activity of clove essential oil and its volatile vapour against dermatophytic fungi.

PubMed

Chee, Hee Youn; Lee, Min Hee

2007-12-01

Antifungal activities of clove essential oil and its volatile vapour against dermatophytic fungi including Candida albicans, Epidermophyton floccosum. Microsporum audouinii, Trichophyton mentagrophytes, and Trichophyton rubrum were investigated. Both clove essential oil and its volatile vapour strongly inhibit spore germination and mycelial growth of the dermatophytic fungi tested. The volatile vapour of clove essential oil showed fungistatic activity whereas direct application of clove essential oil showed fungicidal activity.

Post-Contamination Vapour Hazards from Military Vehicles Contaminated with Thickened and Unthickened GD

DTIC Science & Technology

1979-02-01

The residual vapour hazards from four types of military vehicles previously contaminated with either thickened or unthickened GD have been measured...magnitude of these hazards have been investigated and an assessment made of their relevance to contamination control. It was found that on permeable... contamination had been applied were ineffective in reducing the subsequent vapour hazard; the vapour hazard arising from thickened GD contamination was less

Comparison of interaction mechanisms of copper phthalocyanine and nickel phthalocyanine thin films with chemical vapours

NASA Astrophysics Data System (ADS)

Ridhi, R.; Singh, Sukhdeep; Saini, G. S. S.; Tripathi, S. K.

2018-04-01

The present study deals with comparing interaction mechanisms of copper phthalocyanine and nickel phthalocyanine with versatile chemical vapours: reducing, stable aromatic and oxidizing vapours namely; diethylamine, benzene and bromine. The variation in electrical current of phthalocyanines with exposure of chemical vapours is used as the detection parameter for studying interaction behaviour. Nickel phthalocyanine is found to exhibit anomalous behaviour after exposure of reducing vapour diethylamine due to alteration in its spectroscopic transitions and magnetic states. The observed sensitivities of copper phthalocyanine and nickel phthalcyanine films are different in spite of their similar bond numbers, indicating significant role of central metal atom in interaction mechanism. The variations in electronic transition levels after vapours exposure, studied using UV-Visible spectroscopy confirmed our electrical sensing results. Bromine exposure leads to significant changes in vibrational bands of metal phthalocyanines as compared to other vapours.

Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN

NASA Astrophysics Data System (ADS)

Osinski, Marek; Eliseev, Petr G.; Lee, Jinhyun; Smagley, Vladimir A.; Sugahara, Tamoya; Sakai, Shiro

1999-11-01

Experimental data on photoluminescence of various bulk and quantum-well epitaxial InGaN/GaN structures grown by MOCVD are interpreted in terms of a band-tail model of inhomogeneously broadened radiative recombination. The anomalous temperature-induced blue spectral is shown to result from band-tail recombination under non-degenerate conditions. Significant differences are observed between epilayers grown on sapphire substrates and on GaN substrates prepared by the sublimination method, with no apparent evidence of band tails in homoepitaxial structures, indicating their higher crystalline quality.

Impact of major volcanic eruptions on stratospheric water vapour

NASA Astrophysics Data System (ADS)

Löffler, Michael; Brinkop, Sabine; Jöckel, Patrick

2016-05-01

Volcanic eruptions can have a significant impact on the Earth's weather and climate system. Besides the subsequent tropospheric changes, the stratosphere is also influenced by large eruptions. Here changes in stratospheric water vapour after the two major volcanic eruptions of El Chichón in Mexico in 1982 and Mount Pinatubo on the Philippines in 1991 are investigated with chemistry-climate model simulations. This study is based on two simulations with specified dynamics of the European Centre for Medium-Range Weather Forecasts Hamburg - Modular Earth Submodel System (ECHAM/MESSy) Atmospheric Chemistry (EMAC) model, performed within the Earth System Chemistry integrated Modelling (ESCiMo) project, of which only one includes the long-wave volcanic forcing through prescribed aerosol optical properties. The results show a significant increase in stratospheric water vapour induced by the eruptions, resulting from increased heating rates and the subsequent changes in stratospheric and tropopause temperatures in the tropics. The tropical vertical advection and the South Asian summer monsoon are identified as sources for the additional water vapour in the stratosphere. Additionally, volcanic influences on tropospheric water vapour and El Niño-Southern Oscillation (ENSO) are evident, if the long-wave forcing is strong enough. Our results are corroborated by additional sensitivity simulations of the Mount Pinatubo period with reduced nudging and reduced volcanic aerosol extinction.

Levels of selected carcinogens and toxicants in vapour from electronic cigarettes.

PubMed

Goniewicz, Maciej Lukasz; Knysak, Jakub; Gawron, Michal; Kosmider, Leon; Sobczak, Andrzej; Kurek, Jolanta; Prokopowicz, Adam; Jablonska-Czapla, Magdalena; Rosik-Dulewska, Czeslawa; Havel, Christopher; Jacob, Peyton; Benowitz, Neal

2014-03-01

Electronic cigarettes, also known as e-cigarettes, are devices designed to imitate regular cigarettes and deliver nicotine via inhalation without combusting tobacco. They are purported to deliver nicotine without other toxicants and to be a safer alternative to regular cigarettes. However, little toxicity testing has been performed to evaluate the chemical nature of vapour generated from e-cigarettes. The aim of this study was to screen e-cigarette vapours for content of four groups of potentially toxic and carcinogenic compounds: carbonyls, volatile organic compounds, nitrosamines and heavy metals. Vapours were generated from 12 brands of e-cigarettes and the reference product, the medicinal nicotine inhaler, in controlled conditions using a modified smoking machine. The selected toxic compounds were extracted from vapours into a solid or liquid phase and analysed with chromatographic and spectroscopy methods. We found that the e-cigarette vapours contained some toxic substances. The levels of the toxicants were 9-450 times lower than in cigarette smoke and were, in many cases, comparable with trace amounts found in the reference product. Our findings are consistent with the idea that substituting tobacco cigarettes with e-cigarettes may substantially reduce exposure to selected tobacco-specific toxicants. E-cigarettes as a harm reduction strategy among smokers unwilling to quit, warrants further study. (To view this abstract in Polish and German, please see the supplementary files online.).

Mixing of multiple metal vapours into an arc plasma in gas tungsten arc welding of stainless steel

NASA Astrophysics Data System (ADS)

Park, Hunkwan; Trautmann, Marcus; Tanaka, Keigo; Tanaka, Manabu; Murphy, Anthony B.

2017-11-01

A computational model of the mixing of multiple metal vapours, formed by vaporization of the surface of an alloy workpiece, into the thermal arc plasma in gas tungsten arc welding (GTAW) is presented. The model incorporates the combined diffusion coefficient method extended to allow treatment of three gases, and is applied to treat the transport of both chromium and iron vapour in the helium arc plasma. In contrast to previous models of GTAW, which predict that metal vapours are swept away to the edge of the arc by the plasma flow, it is found that the metal vapours penetrate strongly into the arc plasma, reaching the cathode region. The predicted results are consistent with published measurements of the intensity of atomic line radiation from the metal vapours. The concentration of chromium vapour is predicted to be higher than that of iron vapour due to its larger vaporization rate. An accumulation of chromium vapour is predicted to occur on the cathode at about 1.5 mm from the cathode tip, in agreement with published measurements. The arc temperature is predicted to be strongly reduced due to the strong radiative emission from the metal vapours. The driving forces causing the diffusion of metal vapours into the helium arc are examined, and it is found that diffusion due to the applied electric field (cataphoresis) is dominant. This is explained in terms of large ionization energies and the small mass of helium compared to those of the metal vapours.

Kinetic model of water vapour adsorption by gluten-free starch

NASA Astrophysics Data System (ADS)

Ocieczek, Aneta; Kostek, Robert; Ruszkowska, Millena

2015-01-01

This study evaluated the kinetics of water vapour adsorption on the surface of starch molecules derived from wheat. The aim of the study was to determine an equation that would allow estimation of water content in tested material in any timepoint of the adsorption process aimed at settling a balance with the environment. An adsorption isotherm of water vapour on starch granules was drawn. The parameters of the Guggenheim, Anderson, and De Boer equation were determined by characterizing the tested product and adsorption process. The equation of kinetics of water vapour adsorption on the surface of starch was determined based on the Guggenheim, Anderson, and De Boer model describing the state of equilibrium and on the model of a first-order linear inert element describing the changes in water content over time.

Mechanism of two-step vapour-crystal nucleation in a pore

NASA Astrophysics Data System (ADS)

van Meel, J. A.; Liu, Y.; Frenkel, D.

2015-09-01

We present a numerical study of the effect of hemispherical pores on the nucleation of Lennard-Jones crystals from the vapour phase. As predicted by Page and Sear, there is a narrow range of pore radii, where vapour-liquid nucleation can become a two-step process. A similar observation was made for different pore geometries by Giacomello et al. We find that the maximum nucleation rate depends on both the size and the adsorption strength of the pore. Moreover, a poe can be more effective than a planar wall with the same strength of attraction. Pore-induced vapour-liquid nucleation turns out to be the rate-limiting step for crystal nucleation. This implies that crystal nucleation can be enhanced by a judicious choice of the wetting properties of a microporous nucleating agent.

Growth factor of Fe-doped semi-insulating InP by LP-MOCVD

NASA Astrophysics Data System (ADS)

Yan, Xuejin; Zhu, Hongliang; Wang, Wei; Xu, Guoyang; Zhou, Fan; Ma, Chaohua; Wang, Xiaojie; Tian, Huijiang; Zhang, Jingyuan; Wu, Rong Han; Wang, Qiming

1998-08-01

The semi-insulating InP has been grown using ferrocene as a dopant source by low pressure MOCVD. Fe doped semi-insulating InP material whose resistivity is equal to 2.0 X 108(Omega) *cm and the breakdown field is greater than 4.0 X 104Vcm-1 has been achieved. It is found that the magnitude of resistivity increases with growing pressure enhancement under keeping TMIn, PH3, ferrocene [Fe(C5H5)2] flow constant at 620 degrees Celsius growth temperature. Moreover, the experimental results which resistivity varies with ferrocene mole fraction are given. It is estimated that active Fe doping efficiency, (eta) , is equal to 8.7 X 10-4 at 20 mbar growth pressure and 620 degrees Celsius growth temperature by the comparison of calculated and experimental results.

Metalorganic chemical vapor deposition of gallium nitride on sacrificial substrates

NASA Astrophysics Data System (ADS)

Fenwick, William Edward

GaN-based light emitting diodes (LEDs) face several challenges if the technology is to continue to make a significant impact in general illumination, and on technology that has become known as solid state lighting (SSL). Two of the most pressing challenges for the continued penetration of SSL into traditional lighting applications are efficacy and total lumens from the device, and their related cost. The development of alternative substrate technologies is a promising avenue toward addressing both of these challenges, as both GaN-based device technology and the associated metalorganic chemical vapor deposition (MOCVD) technology are already relatively mature technologies with a well-understood cost base. Zinc oxide (ZnO) and silicon (Si) are among the most promising alternative substrates for GaN epitaxy. These substrates offer the ability to access both higher efficacy and lumen devices (ZnO) at a much reduced cost. This work focuses on the development of MOCVD growth processes to yield high quality GaN-based materials and devices on both ZnO and Si. ZnO is a promising substrate for growth of low defect-density GaN because of its similar lattice constant and thermal expansion coefficient. The major hurdles for GaN growth on ZnO are the instability of the substrate in a hydrogen atmosphere, which is typical of nitride growth conditions, and the inter-diffusion of zinc and oxygen from the substrate into the GaN-based epitaxial layer. A process was developed for the MOCVD growth of GaN and InxGa 1-xN on ZnO that attempted to address these issues. The structural and optical properties of these films were studied using various techniques. X-ray diffraction (XRD) showed the growth of wurtzite GaN on ZnO, and room-temperature photoluminescence (RT-PL) showed near band-edge luminescence from the GaN and InxGa1-xN layers. However, high zinc and oxygen concentrations due to interdiffusion near the ZnO substrate remained an issue; therefore, the diffusion of zinc and oxygen

WALES: water vapour lidar experiment in space

NASA Astrophysics Data System (ADS)

Guerin, F.; Pain, Th.; Palmade, J.-L.; Pailharey, E.; Giraud, D.; Jubineau, F.

2017-11-01

The WAter vapour Lidar Experiment in Space (WALES) mission aims at providing water vapour profiles with high accuracy and vertical resolution through the troposphere and the lower stratosphere on a global scale using an instrument based on Differential Absorption Lidar (DIAL) observation technique, and mounted on an Earth orbiting satellite. This active DIAL technique will also provide data on the cloud coverage by means of the signal reflection on the cloud layers. In DIAL operation, backscatter lidar signals at two wavelengths - at least - are detected. One wavelength (λ ON) is highly absorbed by the species of interest, while the other (λ OFF) is backscattered with minimal absorption. This difference in absorption at the two transmitted wavelengths leads to the determination of the concentration of the species of interest. The DIAL is therefore a dual-wavelength lidar in which the signals detected at the two wavelengths are processed to extract the absolute density of water vapour. The Phase A study performed by ALCATEL Space and their partners under contract of the European Space Agency has led to a credible and innovative concept of instrument, based on a mission performance modelling. The challenge is to foster the scientific return while minimising the development risks and costs of instrument development, in particular the laser transmitter. The paper describes the payload design and the implementation on a low Earth orbiting (LEO) satellite.

WALES: WAter vapour Lidar Experiment in Space

NASA Astrophysics Data System (ADS)

Guerin, F.; Pain, Th.; Palmade, J. L.; Pailharey, E.; Giraud, D.; Jubineau, F.

2004-06-01

The WAter vapour Lidar Experiment in Space (WALES) mission aims at providing water vapour profiles with high accuracy and vertical resolution through the troposphere and the lower stratosphere on a global scale using an instrument based on Differential Absorption Lidar (DIAL) observation technique, and mounted on an Earth orbiting satellite. This active DIAL technique will also provide data on the cloud coverage by means of the signal reflection on the cloud layers. In DIAL operation, backscatter lidar signals at two wavelengths - at least - are detected. One wavelength (λ ON) is highly absorbed by the species of interest, while the other (λ OFF) is backscattered with minimal absorption. This difference in absorption at the two transmitted wavelengths leads to the determination of the concentration of the species of interest. The DIAL is therefore a dual-wavelength lidar in which the signals detected at the two wavelengths are processed to extract the absolute density of water vapour. The Phase A study performed by ALCATEL Space and their partners under contract of the European Space Agency has led to a credible and innovative concept of instrument, based on a mission performance modelling. The challenge is to foster the scientific return while minimising the development risks and costs of instrument development, in particular the laser transmitter. The paper describes the payload design and the implementation on a low Earth orbiting (LEO) satellite.

Deposition of dual-layer coating on Ti6Al4V

NASA Astrophysics Data System (ADS)

Hussain Din, Sajad; Shah, M. A.; Sheikh, N. A.

2017-03-01

Dual-layer diamond coatings were deposited on titanium alloy (Ti6Al4V) using a hot filament chemical vapour deposition technique with the anticipation of studying the structural and morphology properties of the alloy. The coated diamond films were characterized using scanning electron microscope, x-ray diffraction (XRD), and Raman spectroscopy. The XRD studies reveal that the deposited films are highly crystalline in nature, whereas morphological studies show that the films have a cauliflower structure. XRD analysis was used to calculate the structural parameters of the Ti6Al4V and CVD-coated Ti6Al4V. Raman spectroscopy was used to determine the nature and magnitude of the residual stress of the coatings.

Unsaturation of vapour pressure inside leaves of two conifer species

DOE PAGES

Cernusak, Lucas A.; Ubierna, Nerea; Jenkins, Michael W.; ...

2018-05-16

Stomatal conductance (g s) impacts both photosynthesis and transpiration, and is therefore fundamental to the global carbon and water cycles, food production, and ecosystem services. Mathematical models provide the primary means of analysing this important leaf gas exchange parameter. A nearly universal assumption in such models is that the vapour pressure inside leaves (e i) remains saturated under all conditions. The validity of this assumption has not been well tested, because so far e i cannot be measured directly. Here, we test this assumption using a novel technique, based on coupled measurements of leaf gas exchange and the stable isotopemore » compositions of CO 2 and water vapour passing over the leaf. We applied this technique to mature individuals of two semiarid conifer species. In both species, e i routinely dropped below saturation when leaves were exposed to moderate to high air vapour pressure deficits. Typical values of relative humidity in the intercellular air spaces were as low 0.9 in Juniperus monosperma and 0.8 in Pinus edulis. These departures of e i from saturation caused significant biases in calculations of g s and the intercellular CO 2 concentration. Thus, our results refute the longstanding assumption of saturated vapour pressure in plant leaves under all conditions.« less

Unsaturation of vapour pressure inside leaves of two conifer species

DOE Office of Scientific and Technical Information (OSTI.GOV)

Cernusak, Lucas A.; Ubierna, Nerea; Jenkins, Michael W.

Stomatal conductance (g s) impacts both photosynthesis and transpiration, and is therefore fundamental to the global carbon and water cycles, food production, and ecosystem services. Mathematical models provide the primary means of analysing this important leaf gas exchange parameter. A nearly universal assumption in such models is that the vapour pressure inside leaves (e i) remains saturated under all conditions. The validity of this assumption has not been well tested, because so far e i cannot be measured directly. Here, we test this assumption using a novel technique, based on coupled measurements of leaf gas exchange and the stable isotopemore » compositions of CO 2 and water vapour passing over the leaf. We applied this technique to mature individuals of two semiarid conifer species. In both species, e i routinely dropped below saturation when leaves were exposed to moderate to high air vapour pressure deficits. Typical values of relative humidity in the intercellular air spaces were as low 0.9 in Juniperus monosperma and 0.8 in Pinus edulis. These departures of e i from saturation caused significant biases in calculations of g s and the intercellular CO 2 concentration. Thus, our results refute the longstanding assumption of saturated vapour pressure in plant leaves under all conditions.« less

A direct comparison between gas state and atomised liquid state precursor in the deposition of functional coatings by pin corona plasma

NASA Astrophysics Data System (ADS)

Herbert, P. A. F.; Jaroszyńska-Wolińska, J.

2011-07-01

An atmospheric pressure non-thermal equilibrium pin corona plasma jet was used to deposit polymeric coatings from monomer precursor in both vapour and liquid aerosol states to allow a direct comparison of the quality and performance of the as-deposited coatings, specifically with respect to the achievement of soft plasma polymerisation (SPP) where the coating exhibits minimal fragmentation or damage to the monomer molecule while, at the same time, being highly cross-linked. A long chain perfluorocarbon molecule was introduced into the helium plasma and coatings deposited at rates of up to 50 nm/min. XPS, FTIR, contact angle and ellipsometric measurements indicated that a controlled polymerisation reaction had taken place in the case of the vapour deposited samples through the vinyl group of the monomer, with only minor fragmentation of the functional perfluoro chain. Furthermore, a high level of cross-linking was achieved and the coatings were stable to a toluene wash. In contrast, while the liquid deposition samples showed good retention of monomer molecular structure, they exhibited negligible cross-linking and were readily removed by immersion in toluene rendering them functionally useless.

Structural, electrical and optical properties of indium tin oxide thin film grown by metal organic chemical vapor deposition with tetramethyltin-precursor

NASA Astrophysics Data System (ADS)

Zhuo, Yi; Chen, Zimin; Tu, Wenbin; Ma, Xuejin; Wang, Gang

2018-01-01

Tin-doped indium oxide (ITO) is grown by metal organic chemical vapor deposition (MOCVD) using tetramethyltin (TDMASn) as tin precursor. The as-grown ITO films are polycrystalline with (111) and (100) textures. A gradual transition of crystallographic orientation from (111) preferred to (100) preferred is observed as the composition of tin changes. By precisely controlling the Sn doping, the ITO thin films present promising optical and electrical performances at either near-infrared-visible or visible-near-ultraviolet ranges. At low Sn doping level, the as-grown ITO possesses high electron mobility of 48.8 cm2 V-1 s-1, which results in high near-infrared transmittance and low resistivity. At higher Sn doping level, high carrier concentration (8.9 × 1020 cm-3) and low resistivity (3 × 10-4 Ω cm) are achieved. The transmittance is 97.8, 99.1, and 82.3% at the wavelength of 550, 365, and 320 nm, respectively. The results strongly suggest that MOCVD with TDMASn as tin precursor is an effective method to fabricate high quality ITO thin film for near-infrared, visible light, and near-ultraviolet application.

Water vapour and methane coupling in the stratosphere observed using SCIAMACHY solar occultation measurements

NASA Astrophysics Data System (ADS)

Noël, Stefan; Weigel, Katja; Bramstedt, Klaus; Rozanov, Alexei; Weber, Mark; Bovensmann, Heinrich; Burrows, John P.

2018-04-01

An improved stratospheric water vapour data set has been retrieved from SCIAMACHY/ENVISAT solar occultation measurements. It is similar to that successfully applied to methane and carbon dioxide. There is now a consistent set of data products for the three constituents covering the altitudes 17-45 km, the latitude range between about 50 and 70° N, and the period August 2002 to April 2012. The new water vapour concentration profiles agree with collocated results from ACE-FTS and MLS/Aura to within ˜ 5 %. A significant positive linear change in water vapour for the time 2003-2011 is observed at lower stratospheric altitudes with a value of about 0.015 ± 0.008 ppmv year-1 around 17 km. Between 30 and 37 km the changes become significantly negative (about -0.01 ± 0.008 ppmv year-1); all errors are 2σ values. The combined analysis of the SCIAMACHY methane and water vapour time series shows the expected anti-correlation between stratospheric methane and water vapour and a clear temporal variation related to the Quasi-Biennial Oscillation (QBO). Above about 20 km most of the additional water vapour is attributed to the oxidation of methane. In addition short-term fluctuations and longer-term variations on a timescale of 5-6 years are observed. The SCIAMACHY data confirm that at lower altitudes the amount of water vapour and methane are transported from the tropics to higher latitudes via the shallow branch of the Brewer-Dobson circulation.

A sensor of alcohol vapours based on thin polyaniline base film and quartz crystal microbalance.

PubMed

Ayad, Mohamad M; El-Hefnawey, Gad; Torad, Nagy L

2009-08-30

Thin films of polyaniline base, emeraldine base (EB), coating on the quartz crystal microbalance (QCM) electrode were used as a sensitive layer for the detection of a number of primary aliphatic alcohols such as ethanol, methanol, 2-propanol and 1-propanol vapours. The frequency shifts (Deltaf) of the QCM were increased due to the vapour adsorption into the EB film. Deltaf were found to be linearly correlated with the concentrations of alcohols vapour in part per million (ppm). The sensitivity of the sensor was found to be governed by the chemical structure of the alcohol. The sensor shows a good reproducibility and reversibility. The diffusions of different alcohols vapour were studied and the diffusion coefficients (D) were calculated. It is concluded that the diffusion of the vapours into the EB film follows Fickian kinetics.

Carbon acceptor incorporation in GaAs grown by metalorganic chemical vapor deposition: Arsine versus tertiarybutylarsine

NASA Astrophysics Data System (ADS)

Watkins, S. P.; Haacke, G.

1991-10-01

Undoped p-type GaAs epilayers were grown by low-pressure metalorganic chemical vapor deposition (MOCVD) at 650 °C and 76 Torr using either arsine or tertiarybutylarsine (TBA), and trimethylgallium (TMG). Extremely high-purity precursors were used in order to eliminate extrinsic doping effects. Carbon acceptors from the TMG were the dominant residual electrical impurities under all growth conditions. Temperature-dependent Hall measurements were used to make a quantitative comparison of the carbon acceptor concentrations for arsine- and TBA-grown epilayers over a range of As partial pressures. For a given group V partial pressure, we report a significant reduction in carbon acceptor incorporation using TBA compared with arsine under identical growth conditions.

Seasonally-Active Water on Mars: Vapour, Ice, Adsorbate, and the Possibility of Liquid

NASA Astrophysics Data System (ADS)

Richardson, M. I.

2002-12-01

southern caps. Similar climate-models of the water cycle also do not need much exchangeable adsorbed water in order to explain the observed vapour distributions. The possibility of liquid water is tantalizing, but difficult to definitively judge. On scales greater than a meter or so, Mars is most definitely well away from the water triple point--although the surface pressure can exceed 6.1 mbars, the partial pressure of water vapor (to which the triple point refers) is at best orders of magnitude lower. Several careful studies have shown, however, that locally transient (meta-stable) liquid is possible, if the net heating of ice deposits is high enough. This process is aided if the total surface pressure exceeds 6.1mbar (this prevents boiling, or the explosive loss of vapour into the atmosphere) or if the liquid is covered by a thin ice shell, and is only possible if surface temperatures exceed 273K (for pure water, or the appropriate eutectic for brines) and if ice is present. The former challenge is much easier to meet than the latter. The melt scenario requires that ice deposited in winter must be protected from sublimation as surface temperatures increase in spring, but then exposed to the peak of solar heating in summer. Available spacecraft observations of seasonal water will be discussed with the aid of GCM model simulations, and examined in the context of water distributions and phases.

Transport of metals and sulphur in magmas by flotation of sulphide melt on vapour bubbles

NASA Astrophysics Data System (ADS)

Mungall, J. E.; Brenan, J. M.; Godel, B.; Barnes, S. J.; Gaillard, F.

2015-03-01

Emissions of sulphur and metals from magmas in Earth’s shallow crust can have global impacts on human society. Sulphur-bearing gases emitted into the atmosphere during volcanic eruptions affect climate, and metals and sulphur can accumulate in the crust above a magma reservoir to form giant copper and gold ore deposits, as well as massive sulphur anomalies. The volumes of sulphur and metals that accumulate in the crust over time exceed the amounts that could have been derived from an isolated magma reservoir. They are instead thought to come from injections of multiple new batches of vapour- and sulphide-saturated magmas into the existing reservoirs. However, the mechanism for the selective upward transfer of sulphur and metals is poorly understood because their main carrier phase, sulphide melt, is dense and is assumed to settle to the bottoms of magma reservoirs. Here we use laboratory experiments as well as gas-speciation and mass-balance models to show that droplets of sulphide melt can attach to vapour bubbles to form compound drops that float. We demonstrate the feasibility of this mechanism for the upward mobility of sulphide liquids to the shallow crust. Our work provides a mechanism for the atmospheric release of large amounts of sulphur, and contradicts the widely held assumption that dense sulphide liquids rich in sulphur, copper and gold will remain sequestered in the deep crust.

Major element and oxygen isotope geochemistry of vapour-phase garnet from the Topopah Spring Tuff at Yucca Mountain, Nevada, USA

USGS Publications Warehouse

Moscati, Richard J.; Johnson, Craig A.

2014-01-01

Twenty vapour-phase garnets were studied in two samples of the Topopah Spring Tuff of the Paintbrush Group from Yucca Mountain, in southern Nevada. The Miocene-age Topopah Spring Tuff is a 350 m thick, devitrified, moderately to densely welded ash-flow tuff that is zoned compositionally from high-silica rhyolite to latite. During cooling of the tuff, escaping vapour produced lithophysae (former gas cavities) lined with an assemblage of tridymite (commonly inverted to cristobalite or quartz), sanidine and locally, hematite and/or garnet. Vapour-phase topaz and economic deposits associated commonly with topaz-bearing rhyolites (characteristically enriched in F) were not found in the Topopah Spring Tuff at Yucca Mountain. Based on their occurrence only in lithophysae, the garnets are not primary igneous phenocrysts, but rather crystals that grew from a F-poor magma-derived vapour trapped during and after emplacement of the tuff. The garnets are euhedral, vitreous, reddish brown, trapezohedral, as large as 2 mm in diameter and fractured. The garnets also contain inclusions of tridymite. Electron microprobe analyses of the garnets reveal that they are almandine-spessartine (48.0 and 47.9 mol.%, respectively), have an average composition of (Fe1.46Mn1.45Mg0.03Ca0.10)(Al1.93Ti0.02)Si3.01O12 and are comparatively homogeneous in Fe and Mn concentrations from core to rim. Composited garnets from each sample site have δ18O values of 7.2 and 7.4‰. The associated quartz (after tridymite) has δ18O values of 17.4 and 17.6‰, values indicative of reaction with later, low-temperature water. Unaltered tridymite from higher in the stratigraphic section has a δ18O of 11.1‰ which, when coupled with the garnet δ18O values in a quartz-garnet fractionation equation, indicates isotopic equilibration (vapour-phase crystallization) at temperatures of ~600°C. This high-temperature mineralization, formed during cooling of the tuffs, is distinct from the later and commonly recognized

Effects of substrate heating and post-deposition annealing on characteristics of thin MOCVD HfO2 films

NASA Astrophysics Data System (ADS)

Gopalan, Sundararaman; Ramesh, Sivaramakrishnan; Dutta, Shibesh; Virajit Garbhapu, Venkata

2018-02-01

It is well known that Hf-based dielectrics have replaced the traditional SiO2 and SiON as gate dielectric materials for conventional CMOS devices. By using thicker high-k materials such as HfO2 rather than ultra-thin SiO2, we can bring down leakage current densities in MOS devices to acceptable levels. HfO2 is also one of the potential candidates as a blocking dielectric for Flash memory applications for the same reason. In this study, effects of substrate heating and oxygen flow rate while depositing HfO2 thin films using CVD and effects of post deposition annealing on the physical and electrical characteristics of HfO2 thin films are presented. It was observed that substrate heating during deposition helps improve the density and electrical characteristics of the films. At higher substrate temperature, Vfb moved closer to zero and also resulted in significant reduction in hysteresis. Higher O2 flow rates may improve capacitance, but also results in slightly higher leakage. The effect of PDA depended on film thickness and O2 PDA improved characteristics only for thick films. For thinner films forming gas anneal resulted in better electrical characteristics.

Intercomparison of atmospheric water vapour measurements at a Canadian High Arctic site

NASA Astrophysics Data System (ADS)

Weaver, Dan; Strong, Kimberly; Schneider, Matthias; Rowe, Penny M.; Sioris, Chris; Walker, Kaley A.; Mariani, Zen; Uttal, Taneil; McElroy, C. Thomas; Vömel, Holger; Spassiani, Alessio; Drummond, James R.

2017-08-01

Water vapour is a critical component of the Earth system. Techniques to acquire and improve measurements of atmospheric water vapour and its isotopes are under active development. This work presents a detailed intercomparison of water vapour total column measurements taken between 2006 and 2014 at a Canadian High Arctic research site (Eureka, Nunavut). Instruments include radiosondes, sun photometers, a microwave radiometer, and emission and solar absorption Fourier transform infrared (FTIR) spectrometers. Close agreement is observed between all combination of datasets, with mean differences ≤ 1.0 kg m-2 and correlation coefficients ≥ 0.98. The one exception in the observed high correlation is the comparison between the microwave radiometer and a radiosonde product, which had a correlation coefficient of 0.92.A variety of biases affecting Eureka instruments are revealed and discussed. A subset of Eureka radiosonde measurements was processed by the Global Climate Observing System (GCOS) Reference Upper Air Network (GRUAN) for this study. Comparisons reveal a small dry bias in the standard radiosonde measurement water vapour total columns of approximately 4 %. A recently produced solar absorption FTIR spectrometer dataset resulting from the MUSICA (MUlti-platform remote Sensing of Isotopologues for investigating the Cycle of Atmospheric water) retrieval technique is shown to offer accurate measurements of water vapour total columns (e.g. average agreement within -5.2 % of GRUAN and -6.5 % of a co-located emission FTIR spectrometer). However, comparisons show a small wet bias of approximately 6 % at the high-latitude Eureka site. In addition, a new dataset derived from Atmospheric Emitted Radiance Interferometer (AERI) measurements is shown to provide accurate water vapour measurements (e.g. average agreement was within 4 % of GRUAN), which usefully enables measurements to be taken during day and night (especially valuable during polar night).

Coordination number constraint models for hydrogenated amorphous Si deposited by catalytic chemical vapour deposition

NASA Astrophysics Data System (ADS)

Kawahara, Toshio; Tabuchi, Norikazu; Arai, Takashi; Sato, Yoshikazu; Morimoto, Jun; Matsumura, Hideki

2005-02-01

We measured structure factors of hydrogenated amorphous Si by x-ray diffraction and analysed the obtained structures using a reverse Monte Carlo (RMC) technique. A small shoulder in the measured structure factor S(Q) was observed on the larger Q side of the first peak. The RMC results with an unconstrained model did not clearly show the small shoulder. Adding constraints for coordination numbers 2 and 3, the small shoulder was reproduced and the agreement with the experimental data became better. The ratio of the constrained coordination numbers was consistent with the ratio of Si-H and Si-H2 bonds which was estimated by the Fourier transformed infrared spectra of the same sample. This shoulder and the oscillation of the corresponding pair distribution function g(r) at large r seem to be related to the low randomness of cat-CVD deposited a-Si:H.

Technologies for deposition of transition metal oxide thin films: application as functional layers in “Smart windows” and photocatalytic systems

NASA Astrophysics Data System (ADS)

Gesheva, K.; Ivanova, T.; Bodurov, G.; Szilágyi, I. M.; Justh, N.; Kéri, O.; Boyadjiev, S.; Nagy, D.; Aleksandrova, M.

2016-02-01

“Smart windows” are envisaged for future low-energy, high-efficient architectural buildings, as well as for the car industry. By switching from coloured to fully bleached state, these windows regulate the energy of solar flux entering the interior. Functional layers in these devices are the transition metals oxides. The materials (transitional metal oxides) used in smart windows can be also applied as photoelectrodes in water splitting photocells for hydrogen production or as photocatalytic materials for self-cleaning surfaces, waste water treatment and pollution removal. Solar energy utilization is recently in the main scope of numerous world research laboratories and energy organizations, working on protection against conventional fuel exhaustion. The paper presents results from research on transition metal oxide thin films, fabricated by different methods - atomic layer deposition, atmospheric pressure chemical vapour deposition, physical vapour deposition, and wet chemical methods, suitable for flowthrough production process. The lower price of the chemical deposition processes is especially important when the method is related to large-scale glazing applications. Conclusions are derived about which processes are recently considered as most prospective, related to electrochromic materials and devices manufacturing.

Deposition of radon progeny on skin surfaces and resulting radiation doses in radon therapy.

PubMed

Tempfer, H; Hofmann, W; Schober, A; Lettner, H; Dinu, A L

2010-05-01

In the Gastein valley, Austria, radon-rich thermal water and air have been used for decades for the treatment of various diseases. To explore the exposure pathway of radon progeny adsorbed to the skin, progeny activities on the skin of patients exposed to thermal water (in a bathtub) and hot vapour (in a vapour chamber) were measured by alpha spectrometry. Average total alpha activities on the patients' skin varied from 1.2 to 4.1 Bq/cm(2) in the bathtub, and from 1.1 to 2.6 Bq/cm(2) in the vapour bath. Water pH-value and ion concentration did affect radon progeny adsorption on the skin, whereas skin greasiness and blood circulation did not. Measurements of the penetration of deposited radon progeny into the skin revealed a roughly exponential activity distribution in the upper layers of the skin. Based on the radon progeny surface activity concentrations and their depth distributions, equivalent doses to different layers of the skin, in particular to the Langerhans cells located in the epidermis, ranged from 0.12 mSv in the thermal bath to 0.33 mSv in the vapour bath, exceeding equivalent doses to the inner organs (kidneys) by inhaled radon and progeny by about a factor 3, except for the lung, which receives the highest doses via inhalation. These results suggest that radon progeny attachment on skin surfaces may play a major role in the dosimetry for both thermal water and hot vapour treatment schemes.

The Droplets Condensate Centering in the Vapour Channel of Short Low Temperature Heat Pipes at High Heat Loads

NASA Astrophysics Data System (ADS)

Seryakov, A. V.; Shakshin, S. L.; Alekseev, A. P.

2017-11-01

The results of experimental studies of the process of condensate microdroplets centering contained in the moving moist vapour in the vapour channel of short heat pipes (HPs) for large thermal loads are presented. A vapour channel formed by capillary-porous insert in the form of the inner Laval-liked nozzle along the entire length of the HP. In the upper cover forming a condensation surface in the HP, on the diametrical line are installed capacitive sensors, forming three capacitors located at different distances from the longitudinal axis of the vapour channel. With increasing heat load and the boil beginning in the evaporator a large amount of moist vapour in the vapour channel of HP occur the pressure pulsation with frequency of 400-500 Hz and amplitude up to 1·104Pa. These pulsations affect the moving of the inertial droplets subsystem of the vapour and due to the heterogeneity of the velocity profile around the particle flow in the vapour channel at the diameter of microdroplets occurs transverse force, called the Saffman force and shear microdroplets to the center of vapour channel. Using installed in the top cover capacitors we can record the radial displacement of the condensable microdroplets.

Alcohol vapours sensor based on thin polyaniline salt film and quartz crystal microbalance.

PubMed

Ayad, Mohamad M; Torad, Nagy L

2009-06-15

A sensor based on the quartz crystal microbalance (QCM) technique was developed for detection of a number of primary aliphatic alcohols such as ethanol, methanol, 1-propanol, and 2-propanol vapours. Detection was based on a sensitive and a thin film of polyaniline, emeraldine salt (ES), coated the QCM electrode. The frequency shifts (Delta f) of the QCM were increased due to the vapour absorption into the ES film. The values of Delta f were found to be linearly correlated with the concentrations of alcohols vapour in mg L(-1). The changes in frequency are due to the hydrophilic character of the ES and the electrostatic interaction as well as the type of the alcohol. The sensor shows a good reproducibility and reversibility. The diffusion and diffusion coefficient (D) of different alcohols vapour were determined. It was found that the sensor follows Fickian kinetics.

Saturated Vapour Pressure and Refrigeration - Part I

ERIC Educational Resources Information Center

Bunker, C. A.

1973-01-01

The first part of a two-part article describes an experimental approach that can be used in teaching the concept of saturated vapour pressure. This leads to a discussion of refrigeration cycles in the second part of the article. (JR)

Kinetic studies of BTEX vapour adsorption onto surfaces of calix-4-resorcinarene films

NASA Astrophysics Data System (ADS)

Hassan, A. K.; Ray, A. K.; Nabok, A. V.; Wilkop, T.

2001-10-01

The exposure of spun films of an amphiphilic calix-4-resorcinarene (C-4-RA) derivative to vapours of benzene, toluene, ethylbenzene, and m-xylene (BTEX) has produced a graded response, promising for the development of multisensor arrays. Fast and reversible adsorption of ethylbenzene was associated with changing the refractive index of the sensing layer and is believed to be due to the host-guest interaction between the cavitand C-4-RA molecules and the vapour molecules. Prolonged irradiation of the films with a focused laser beam has resulted in an initial increase of film sensitivity to the different organic vapours.

A Rapid Deposition of Fluorine Doped Zinc Oxide Using the Atmospheric Pressure Chemical Vapour Deposition Method

NASA Astrophysics Data System (ADS)

Najafi, Navid; Rozati, S. M.

2018-03-01

Fluorine-doped zinc oxide (FZO) (ZnO:F) thin films were manufactured by atmospheric pressure chemical vapor deposition (APCVD) on glass substrates using zinc acetate dihydrate [C4H6O4Zn·2H2O, ZnAc] and ammonium fluoride (NH4F) as the source of fluorine with deposition duration of only 120 s for each sample. The effects of different amounts of fluorine as the dopant on the structural, electrical and optical properties of FZO thin films were investigated. The results show a polycrystalline structure at higher temperatures compared to amorphous structure at lower temperatures. The x-ray diffraction patterns of the polycrystalline films were identified as a hexagonal wurtzite structure of zinc oxide (ZnO) with the (002) preferred orientation. Also, the sheet resistance decreased from 17.8 MΩ/□ to 28.9 KΩ/□ for temperatures 325°C to 450°C, respectively. In order to further decrease the sheet resistance of the undoped ZnO thin films, fluorine was added using NH4F as the precursor, and again a drastic change in sheet resistance of only 17.7 Ω/□ was obtained. Based on the field emission scanning electron microscopy images, the fluorine concentration in CVD source is an important factor affecting the grain size and modifies electrical parameters. Ultraviolet-visible measurements revealed reduction of transparency of the layers with increasing fluorine as the dopant.

3D-printed poly(vinylidene fluoride)/carbon nanotube composites as a tunable, low-cost chemical vapour sensing platform

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kennedy, Z. C.; Christ, J. F.; Evans, K. A.

We report the production of flexible, highly-conductive poly(vinylidene flouride) (PVDF) and multi-walled carbon nanotube (MWCNT) composites as filament feedstock for 3D-printing. This account further describes, for the first-time, fused deposition modelling (FDM) derived 3D-printed objects with chemiresistive properties in response to volatile organic compounds. The typically prohibitive thermal expansion and die swell characteristics of PVDF were minimized by the presence of MWCNTs in the composites enabling straightforward processing and printing. The nanotubes form a dispersed network as characterized by helium ion microscopy, contributing to excellent conductivity (1 x 10-2 S / cm). The printed composites contain little residual metal particulatemore » relative to parts from commercial PLA-nanocomposite material visualized by micro X-ray computed tomography (μ-CT) and corroborated with thermogravimetric analysis. Printed sensing strips, with MWCNT loadings up to 15 % mass, function as reversible vapour sensors with the strongest responses arising with organic compounds capable of readily intercalating, and subsequently swelling the PVDF matrix (acetone and ethyl acetate). A direct correlation between MWCNT concentration and resistance change was also observed, with larger responses (up to 161 % after 3 minutes) generated with decreased MWCNT loadings. These findings highlight the utility of FDM printing in generating low-cost sensors that respond strongly and reproducibly to target vapours. Furthermore, the sensors can be easily printed in different geometries, expanding their utility to wearable form factors. The proposed formulation strategy may be tailored to sense diverse sets of vapour classes through structural modification of the polymer backbone and/or functionalization of the nanotubes within the composite.« less

FAST TRACK COMMUNICATION Understanding adhesion at as-deposited interfaces from ab initio thermodynamics of deposition growth: thin-film alumina on titanium carbide

NASA Astrophysics Data System (ADS)

Rohrer, Jochen; Hyldgaard, Per

2010-12-01

We investigate the chemical composition and adhesion of chemical vapour deposited thin-film alumina on TiC using and extending a recently proposed nonequilibrium method of ab initio thermodynamics of deposition growth (AIT-DG) (Rohrer and Hyldgaard 2010 Phys. Rev. B 82 045415). A previous study of this system (Rohrer et al 2010 J. Phys.: Condens. Matter 22 015004) found that use of equilibrium thermodynamics leads to predictions of a non-binding TiC/alumina interface, despite its industrial use as a wear-resistant coating. This discrepancy between equilibrium theory and experiment is resolved by the AIT-DG method which predicts interfaces with strong adhesion. The AIT-DG method combines density functional theory calculations, rate-equation modelling of the pressure evolution of the deposition environment and thermochemical data. The AIT-DG method was previously used to predict prevalent terminations of growing or as-deposited surfaces of binary materials. Here we extend the method to predict surface and interface compositions of growing or as-deposited thin films on a substrate and find that inclusion of the nonequilibrium deposition environment has important implications for the nature of buried interfaces.

Exposure to oil mist and oil vapour during offshore drilling in norway, 1979-2004.

PubMed

Steinsvåg, Kjersti; Bråtveit, Magne; Moen, Bente E

2006-03-01

To describe personal exposure to airborne hydrocarbon contaminants (oil mist and oil vapour) from 1979 to 2004 in the mud-handling areas of offshore drilling facilities operating on the Norwegian continental shelf when drilling with oil-based muds. Qualitative and quantitative information was gathered during visits to companies involved in offshore oil and gas production in Norway. Monitoring reports on oil mist and oil vapour exposure covered 37 drilling facilities. Exposure data were analysed using descriptive statistics and by constructing linear mixed-effects models. Samples had been taken during the use of three generations of hydrocarbon base oils, namely diesel oils (1979-1984), low-aromatic mineral oils (1985-1997) and non-aromatic mineral oils (1998-2004). Sampling done before 1984 showed high exposure to diesel vapour (arithmetic mean, AM = 1217 mg m(-3)). When low-aromatic mineral oils were used, the exposure to oil mist and oil vapour was 4.3 and 36 mg m(-3), and the respective AMs for non-aromatic mineral oils were reduced to 0.54 and 16 mg m(-3). Downward time trends were indicated for both oil mist (6% per year) and oil vapour (8% per year) when the year of monitoring was introduced as a fixed effect in a linear mixed-effects model analysis. Rig type, technical control measures and mud temperature significantly determined exposure to oil mist. Rig type, type of base oil, viscosity of the base oil, work area, mud temperature and season significantly determined exposure to oil vapour. Major decreases in variability were found for the between-rig components. Exposure to oil mist and oil vapour declined over time in the mud-handling areas of offshore drilling facilities. Exposure levels were associated with rig type, mud temperature, technical control measures, base oil, viscosity of the base oil, work area and season.

In-vitro and in-vivo anti-Trichophyton activity of essential oils by vapour contact.

PubMed

Inouye, S; Uchida, K; Yamaguchi, H

2001-05-01

The minimum inhibitory doses (MIDs) of essential oils by vapour contact to inhibit the growth of Trichophyton mentagrophytes and Trichophyton rubrum on agar medium were determined using airtight boxes. Among seven essential oils examined, cinnamon bark oil showed the least MID, followed by lemongrass, thyme and perilla oils. Lavender and tea tree oils showed moderate MID, and citron oil showed the highest MID, being 320 times higher than that of cinnamon bark oil. The MID values were less than the minimum inhibitory concentration (MIC) values determined by agar dilution assay. Furthermore, the minimum agar concentration (MAC) of essential oils absorbed from vapour was determined at the time of MID determination as the second antifungal measure. The MAC value by vapour contact was 1.4 to 4.7 times less than the MAC remaining in the agar at the time of MIC determination by agar dilution assay. Using selected essential oils, the anti-Trichophyton activity by vapour contact was examined in more detail. Lemongrass, thyme and perilla oils killed the conidia, inhibited germination and hyphal elongation at 1-4 micrograms ml-1 air, whereas lavender oil was effective at 40-160 micrograms ml-1 air. The in-vivo efficacy of thyme and perilla oils by vapour contact was shown against an experimental tinea pedis in guinea pigs infected with T. mentagrophytes. These results indicated potent anti-Trichophyton action of essential oils by vapour contact.

Investigation of chemical vapour deposition diamond detectors by X-ray micro-beam induced current and X-ray micro-beam induced luminescence techniques

NASA Astrophysics Data System (ADS)

Olivero, P.; Manfredotti, C.; Vittone, E.; Fizzotti, F.; Paolini, C.; Lo Giudice, A.; Barrett, R.; Tucoulou, R.

2004-10-01

Tracking detectors have become an important ingredient in high-energy physics experiments. In order to survive the harsh detection environment of the large hadron collider (LHC), trackers need to have special properties. They must be radiation hard, provide fast collection of charge, be as thin as possible and remove heat from readout electronics. The unique properties of diamond allow it to fulfill these requirements. In this work we present an investigation of the charge transport and luminescence properties of "detector grade" artificial chemical vapour deposition (CVD) diamond devices developed within the CERN RD42 collaboration, performed by means of X-ray micro-beam induced current collection (XBICC) and X-ray micro-beam induced luminescence (XBIL) techniques. XBICC technique allows quantitative estimates of the transport parameters of the material to be evaluated and mapped with micrometric spatial resolution. In particular, the high resolution and sensitivity of the technique has allowed a quantitative study of the inhomogeneity of the charge transport parameter defined as the product of mobility and lifetime for both electron and holes. XBIL represents a technique complementary to ion beam induced luminescence (IBIL), which has already been used by our group, since X-ray energy loss profile in the material is different from that of MeV ions. X-ray induced luminescence maps have been performed simultaneously with induced photocurrent maps, to correlate charge transport and induced luminescence properties of diamond. Simultaneous XBICC and XBIL maps exhibit features of partial complementarity that have been interpreted on the basis of considerations on radiative and non-radiative recombination processes which compete with charge transport efficiency.

The effect of perfluorocarbon vapour on the measurement of respiratory tidal volume during partial liquid ventilation.

PubMed

Davies, M W; Dunster, K R

2000-08-01

During partial liquid ventilation perfluorocarbon vapour is present in the exhaled gases. The volumes of these gases are measured by pneumotachometers. Error in measuring tidal volumes will give erroneous measurement of lung compliance during partial liquid ventilation. We aim to compare measured tidal volumes with and without perfluorocarbon vapour using tidal volumes suitable for use in neonates. Tidal volumes were produced with a 100 ml calibration syringe from 20 to 100 ml and with a calibrated Harvard rodent ventilator from 2.5 to 20 ml. Control tidal volumes were drawn from a humidifier chamber containing water vapour and the PFC tidal volumes were drawn from a humidifier chamber containing water and perfluorocarbon (FC-77) vapour. Tidal volumes were measured by a fixed orifice, target, differential pressure flowmeter (VenTrak) or a hot-wire anenometer (Bear Cub) placed between the calibration syringe or ventilator and the humidifier chamber. All tidal volumes measured with perfluorocarbon vapour were increased compared with control (ANOVA p < 0.001 and post t-test p < 0.0001). Measured tidal volume increased from 7 to 16% with the fixed orifice type flow-meter, and from 35 to 41% with the hot-wire type. In conclusion, perfluorocarbon vapour flowing through pneumotachometers gives falsely high tidal volume measurements. Calculation of lung compliance must take into account the effect of perfluorocarbon vapour on the measurement of tidal volume.

GPS water vapour tomography: preliminary results from the ESCOMPTE field experiment

NASA Astrophysics Data System (ADS)

Champollion, C.; Masson, F.; Bouin, M.-N.; Walpersdorf, A.; Doerflinger, E.; Bock, O.; Van Baelen, J.

2005-03-01

Water vapour plays a major role in atmospheric processes but remains difficult to quantify due to its high variability in time and space and the sparse set of available measurements. The GPS has proved its capacity to measure the integrated water vapour at zenith with the same accuracy as other methods. Recent studies show that it is possible to quantify the integrated water vapour in the line of sight of the GPS satellite. These observations can be used to study the 3D heterogeneity of the troposphere using tomographic techniques. We develop three-dimensional tomographic software to model the three-dimensional distribution of the tropospheric water vapour from GPS data. First, the tomographic software is validated by simulations based on the realistic ESCOMPTE GPS network configuration. Without a priori information, the absolute value of water vapour is less resolved as opposed to relative horizontal variations. During the ESCOMPTE field experiment, a dense network of 17 dual frequency GPS receivers was operated for 2 weeks within a 20×20-km area around Marseille (southern France). The network extends from sea level to the top of the Etoile chain (˜700 m high). Optimal results have been obtained with time windows of 30-min intervals and input data evaluation every 15 min. The optimal grid for the ESCOMTE geometrical configuration has a horizontal step size of 0.05°×0.05° and 500 m vertical step size. Second, we have compared the results of real data inversions with independent observations. Three inversions have been compared to three successive radiosonde launches and shown to be consistent. A good resolution compared to the a priori information is obtained up to heights of 3000 m. A humidity spike at 4000-m altitude remains unresolved. The reason is probably that the signal is spread homogeneously over the whole network and that such a feature is not resolvable by tomographic techniques. The results of our pure GPS inversion show a correlation with

Dew-point measurements at high water vapour pressure

NASA Astrophysics Data System (ADS)

Lomperski, S.; Dreier, J.

1996-05-01

A dew-point meter capable of measuring humidity at high vapour pressure and high temperature has been constructed and tested. Humidity measurements in pure steam were made over the temperature range 100 - 1500957-0233/7/5/003/img1C and a vapour pressure range of 1 - 4 bar. The dew-point meter performance was assessed by comparing measurements with a pressure transmitter and agreement between the two was within 0957-0233/7/5/003/img2% relative humidity. Humidity measurements in steam - air mixtures were also made and the dew-point meter readings were compared to those of a zirconia oxygen sensor. For these tests the dew-point meter readings were generally within 0957-0233/7/5/003/img2% relative humidity of the oxygen sensor measurements.

Oil mist and vapour concentrations from drilling fluids: inter- and intra-laboratory comparison of chemical analyses.

PubMed

Galea, Karen S; Searl, Alison; Sánchez-Jiménez, Araceli; Woldbæk, Torill; Halgard, Kristin; Thorud, Syvert; Steinsvåg, Kjersti; Krüger, Kirsti; Maccalman, Laura; Cherrie, John W; van Tongeren, Martie

2012-01-01

There are no recognized analytical methods for measuring oil mist and vapours arising from drilling fluids used in offshore petroleum drilling industry. To inform the future development of improved methods of analysis for oil mist and vapours this study assessed the inter- and intra-laboratory variability in oil mist and vapour analysis. In addition, sample losses during transportation and storage were assessed. Replicate samples for oil mist and vapour were collected using the 37-mm Millipore closed cassette and charcoal tube assembly. Sampling was conducted in a simulated shale shaker room, similar to that found offshore for processing drilling fluids. Samples were analysed at two different laboratories, one in Norway and one in the UK. Oil mist samples were analysed using Fourier transform infrared spectroscopy (FTIR), while oil vapour samples were analysed by gas chromatography (GC). The comparison of replicate samples showed substantial within- and between-laboratory variability in reported oil mist concentrations. The variability in oil vapour results was considerably reduced compared to oil mist, provided that a common method of calibration and quantification was adopted. The study also showed that losses can occur during transportation and storage of samples. There is a need to develop a harmonized method for the quantification of oil mist on filter and oil vapour on charcoal supported by a suitable proficiency testing scheme for laboratories involved in the analysis of occupational hygiene samples for the petroleum industry. The uncertainties in oil mist and vapour measurement have substantial implications in relation to compliance with occupational exposure limits and also in the reliability of any exposure-response information reported in epidemiological studies.

The vapour of imidazolium-based ionic liquids: a mass spectrometry study.

PubMed

Deyko, A; Lovelock, K R J; Licence, P; Jones, R G

2011-10-06

Eight common dialkylimidazolium-based ionic liquids have been successfully evaporated in ultra-high vacuum and their vapours analysed by line of sight mass spectrometry using electron ionisation. The ionic liquids investigated were 1-alkyl-3-methylimidazolium bis[(trifluoromethane)sulfonyl]imide, [C(n)C(1)Im][Tf(2)N] (where n = 2, 4, 6, 8), 1-alkyl-3-methylimidazolium tetrafluoroborate, [C(n)C(1)Im][BF(4)] (where n = 4, 8), 1-butyl-3-methylimidazolium octylsulfate, [C(4)C(1)Im][C(8)OSO(3)] and 1-butyl-3-methylimidazolium tetrachloroferrate, [C(4)C(1)Im][FeCl(4)]. All ionic liquids studied here evaporated as neutral ion pairs; no evidence of decomposition products in the vapour phase were observed. Key fragment cations of the ionised vapour of the ionic liquids are identified. The appearance energies, E(app), of the parent cation were measured and used to estimate the ionisation energies, E(i), for the vapour phase neutral ion pairs. Measured ionisation energies ranged from 10.5 eV to 13.0 eV. Using both the identity and E(app) values, the fragmentation pathways for a number of fragment cations are postulated. It will be shown that the enthalpy of vaporisation, Δ(vap)H, can successfully be measured using more than one fragment cation, although caution is required as many fragment cations can also be formed by ionisation of decomposition products.

Flash vaporization during earthquakes evidenced by gold deposits

NASA Astrophysics Data System (ADS)

Weatherley, Dion K.; Henley, Richard W.

2013-04-01

Much of the world's known gold has been derived from arrays of quartz veins. The veins formed during periods of mountain building that occurred as long as 3 billion years ago, and were deposited by very large volumes of water that flowed along deep, seismically active faults. The veins formed under fluctuating pressures during earthquakes, but the magnitude of the pressure fluctuations and their influence on mineral deposition is not known. Here we use a simple thermo-mechanical piston model to calculate the drop in fluid pressure experienced by a fluid-filled fault cavity during an earthquake. The geometry of the model is constrained using measurements of typical fault jogs, such as those preserved in the Revenge gold deposit in Western Australia, and other gold deposits around the world. We find that cavity expansion generates extreme reductions in pressure that cause the fluid that is trapped in the jog to expand to a very low-density vapour. Such flash vaporization of the fluid results in the rapid co-deposition of silica with a range of trace elements to form gold-enriched quartz veins. Flash vaporization continues as more fluid flows towards the newly expanded cavity, until the pressure in the cavity eventually recovers to ambient conditions. Multiple earthquakes progressively build economic-grade gold deposits.

An electron trap related to phosphorus deficiency in high-purity InP grown by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Yamamoto, Norio; Uwai, Kunihiko; Takahei, Kenichiro

1989-04-01

Deep levels in high-purity InP crystal grown by metalorganic chemical vapor deposition (MOCVD) have been measured by deep level transient spectroscopy. While no electron traps are observed in the samples grown at 600 °C with a [PH3]/[In(C2H5)3] of 170, three electron traps with activation energies of 0.80, 0.44, and 0.24 eV were observed in the samples grown at 500 °C with the same [PH3]/[In(C2H5)3]. The 0.44-eV trap, whose capture cross section is 1.5×10-18 cm2, observed at a low [PH3]/[In(C2H5)3] shows a decrease in concentration as [PH3]/[In(C2H5)3] is increased, and becomes less than 5×1012 cm-3 at a [PH3]/[In(C2H5)3] of more than 170. The comparison of annealing behavior of this trap in MOCVD InP and that in liquid-encapsulated Czochralski InP suggests that the 0.44-eV trap is related to a complex formed from residual impurities and native defects related to a phosphorus deficiency such as phosphorus vacancies or indium interstitials. This trap is found to show configurational bistability similar to that observed for the trap in an Fe-doped InP, MFe center.

Different physiological and behavioural effects of e-cigarette vapour and cigarette smoke in mice.

PubMed

Ponzoni, L; Moretti, M; Sala, M; Fasoli, F; Mucchietto, V; Lucini, V; Cannazza, G; Gallesi, G; Castellana, C N; Clementi, F; Zoli, M; Gotti, C; Braida, D

2015-10-01

Nicotine is the primary addictive substance in tobacco smoke and electronic cigarette (e-cig) vapour. Methodological limitations have made it difficult to compare the role of the nicotine and non-nicotine constituents of tobacco smoke. The aim of this study was to compare the effects of traditional cigarette smoke and e-cig vapour containing the same amount of nicotine in male BALB/c mice exposed to the smoke of 21 cigarettes or e-cig vapour containing 16.8 mg of nicotine delivered by means of a mechanical ventilator for three 30-min sessions/day for seven weeks. One hour after the last session, half of the animals were sacrificed for neurochemical analysis, and the others underwent mecamylamine-precipitated or spontaneous withdrawal for the purposes of behavioural analysis. Chronic intermittent non-contingent, second-hand exposure to cigarette smoke or e-cig vapour led to similar brain cotinine and nicotine levels, similar urine cotinine levels and the similar up-regulation of α4β2 nicotinic acetylcholine receptors in different brain areas, but had different effects on body weight, food intake, and the signs of mecamylamine-precipitated and spontaneous withdrawal episodic memory and emotional responses. The findings of this study demonstrate for the first time that e-cig vapour induces addiction-related neurochemical, physiological and behavioural alterations. The fact that inhaled cigarette smoke and e-cig vapour have partially different dependence-related effects indicates that compounds other than nicotine contribute to tobacco dependence. Copyright © 2015 Elsevier B.V. and ECNP. All rights reserved.

Mocvd Growth of Group-III Nitrides on Silicon Carbide: From Thin Films to Atomically Thin Layers

NASA Astrophysics Data System (ADS)

Al Balushi, Zakaria Y.

Group-III nitride semiconductors (AlN, GaN, InN and their alloys) are considered one of the most important class of materials for electronic and optoelectronic devices. This is not limited to the blue light-emitting diode (LED) used for efficient solid-state lighting, but other applications as well, such as solar cells, radar and a variety of high frequency power electronics, which are all prime examples of the technological importance of nitride based wide bandgap semiconductors in our daily lives. The goal of this dissertation work was to explore and establish new growth schemes to improve the structural and optical properties of thick to atomically thin films of group-III nitrides grown by metalorganic chemical vapor deposition (MOCVD) on SiC substrates for future novel devices. The first research focus of this dissertation was on the growth of indium gallium nitride (InGaN). This wide bandgap semiconductor has attracted much research attention as an active layer in LEDs and recently as an absorber material for solar cells. InGaN has superior material properties for solar cells due to its wavelength absorption tunability that nearly covers the entire solar spectrum. This can be achieved by controlling the indium content in thick grown material. Thick InGaN films are also of interest as strain reducing based layers for deep-green and red light emitters. The growth of thick films of InGaN is, however, hindered by several combined problems. This includes poor incorporation of indium in alloys, high density of structural and morphological defects, as well as challenges associated with the segregation of indium in thick films. Overcoming some of these material challenges is essential in order integrate thick InGaN films into future optoelectronics. Therefore, this dissertation research investigated the growth mechanism of InGaN layers grown in the N-polar direction by MOCVD as a route to improve the structural and optical properties of thick InGaN films. The growth

Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour.

PubMed

Martin, T L; Coe, C; Bagot, P A J; Morrall, P; Smith, G D W; Scott, T; Moody, M P

2016-07-12

Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

NASA Astrophysics Data System (ADS)

Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W.; Scott, T.; Moody, M. P.

2016-07-01

Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour.

Preliminary Martian Atmospheric Water Vapour Column Abundances with Mars Climate Sounder

NASA Astrophysics Data System (ADS)

Lolachi, Ramin; Irwin, P. G. J.; Teanby, N.; Calcutt, S.; Howett, C. J. A.; Bowles, N. E.; Taylor, F. W.; Schofield, J. T.; Kleinboehl, A.; McCleese, D. J.

2007-12-01

Mars Climate Sounder (MCS) is an infra-red radiometer on board NASA's Mars Reconnaissance Orbiter (MRO) launched in August 2005 and now orbiting Mars in a near circular polar orbit. MCS has nine spectral channels in the range 0.3-50 µm. Goals of MCS include global characterization of atmospheric temperature, dust and water profiles observing temporal and spatial variation. Using Oxford University's multivariate retrieval algorithm, NEMESIS, we present preliminary determinations of the water vapour column abundance in the Martian atmosphere during the period September-October 2006 (Ls range 111-129°, i.e. northern hemisphere summer). A combination of spectral channels inside and outside the water vapour rotation band (at 50 µm) are used to retrieve the column abundances mainly using nadir observations (as aerosol opacity is less important relative to water vapour opacity in nadir viewing geometry). We then compare these column abundances to earlier results from the Viking Orbiter Mars Atmospheric Water Detectors (MAWD) and the Thermal Emission Spectrometer (TES) on Mars Global Surveyor.

Atomic-scale Studies of Uranium Oxidation and Corrosion by Water Vapour

PubMed Central

Martin, T. L.; Coe, C.; Bagot, P. A. J.; Morrall, P.; Smith, G. D. W; Scott, T.; Moody, M. P.

2016-01-01

Understanding the corrosion of uranium is important for its safe, long-term storage. Uranium metal corrodes rapidly in air, but the exact mechanism remains subject to debate. Atom Probe Tomography was used to investigate the surface microstructure of metallic depleted uranium specimens following polishing and exposure to moist air. A complex, corrugated metal-oxide interface was observed, with approximately 60 at.% oxygen content within the oxide. Interestingly, a very thin (~5 nm) interfacial layer of uranium hydride was observed at the oxide-metal interface. Exposure to deuterated water vapour produced an equivalent deuteride signal at the metal-oxide interface, confirming the hydride as originating via the water vapour oxidation mechanism. Hydroxide ions were detected uniformly throughout the oxide, yet showed reduced prominence at the metal interface. These results support a proposed mechanism for the oxidation of uranium in water vapour environments where the transport of hydroxyl species and the formation of hydride are key to understanding the observed behaviour. PMID:27403638

Vapours of US and EU Market Leader Electronic Cigarette Brands and Liquids Are Cytotoxic for Human Vascular Endothelial Cells.

PubMed

Putzhammer, Raphaela; Doppler, Christian; Jakschitz, Thomas; Heinz, Katharina; Förste, Juliane; Danzl, Katarina; Messner, Barbara; Bernhard, David

2016-01-01

The present study was conducted to provide toxicological data on e-cigarette vapours of different e-cigarette brands and liquids from systems viewed as leaders in the e-cigarette market and to compare e-cigarette vapour toxicity to the toxicity of conventional strong high-nicotine cigarette smoke. Using an adapted version of a previously constructed cigarette smoke constituent sampling device, we collected the hydrophilic fraction of e-cigarette vapour and exposed human umbilical vein endothelial cells (HUVECs) to the mixture of compounds present in the vapour of 4 different single-use e-cigarettes, 6 different liquid vapours produced by the same refillable e-cigarette, and one e-cigarette with an exchangeable liquid cartridge. After incubation of cells with various concentrations and for various periods of time we analysed cell death induction, proliferation rates, the occurrence of intra-cellular reactive oxygen species, cell morphology, and we also measured e-cigarette heating coil temperatures. Overall, conventional cigarette smoke extract showed the most severe impact on endothelial cells. However, some e-cigarette vapour extracts showed high cytotoxicity, inhibition of cell proliferation, and alterations in cell morphology, which were comparable to conventional high-nicotine cigarettes. The vapours generated from different liquids using the same e-cigarette show substantial differences, pointing to the liquids as an important source for toxicity. E-cigarette vapour-mediated induction of oxidative stress was significant in one out of the 11 analysed vapours. There is a high variability in the acute cytotoxicity of e-cigarette vapours depending on the liquid and on the e-cigarettes used. Some products showed toxic effects close to a conventional high-nicotine cigarette. Liquid nicotine, menthol content, and the formation of acute intracellular reactive oxygen species do not seem to be the central elements in e-cigarette vapour toxicity.

Vapours of US and EU Market Leader Electronic Cigarette Brands and Liquids Are Cytotoxic for Human Vascular Endothelial Cells

PubMed Central

Putzhammer, Raphaela; Doppler, Christian; Jakschitz, Thomas; Heinz, Katharina; Förste, Juliane; Danzl, Katarina; Messner, Barbara; Bernhard, David

2016-01-01

The present study was conducted to provide toxicological data on e-cigarette vapours of different e-cigarette brands and liquids from systems viewed as leaders in the e-cigarette market and to compare e-cigarette vapour toxicity to the toxicity of conventional strong high-nicotine cigarette smoke. Using an adapted version of a previously constructed cigarette smoke constituent sampling device, we collected the hydrophilic fraction of e-cigarette vapour and exposed human umbilical vein endothelial cells (HUVECs) to the mixture of compounds present in the vapour of 4 different single-use e-cigarettes, 6 different liquid vapours produced by the same refillable e-cigarette, and one e-cigarette with an exchangeable liquid cartridge. After incubation of cells with various concentrations and for various periods of time we analysed cell death induction, proliferation rates, the occurrence of intra-cellular reactive oxygen species, cell morphology, and we also measured e-cigarette heating coil temperatures. Overall, conventional cigarette smoke extract showed the most severe impact on endothelial cells. However, some e-cigarette vapour extracts showed high cytotoxicity, inhibition of cell proliferation, and alterations in cell morphology, which were comparable to conventional high-nicotine cigarettes. The vapours generated from different liquids using the same e-cigarette show substantial differences, pointing to the liquids as an important source for toxicity. E-cigarette vapour-mediated induction of oxidative stress was significant in one out of the 11 analysed vapours. There is a high variability in the acute cytotoxicity of e-cigarette vapours depending on the liquid and on the e-cigarettes used. Some products showed toxic effects close to a conventional high-nicotine cigarette. Liquid nicotine, menthol content, and the formation of acute intracellular reactive oxygen species do not seem to be the central elements in e-cigarette vapour toxicity. PMID:27351725

Impact of photoluminescence temperature and growth parameter on the exciton localized in BxGa1-xAs/GaAs epilayers grown by MOCVD

NASA Astrophysics Data System (ADS)

Hidouri, Tarek; Saidi, Faouzi; Maaref, Hassen; Rodriguez, Philippe; Auvray, Laurent

2016-10-01

In this work, BxGa1-xAs/GaAs epilayers with three different boron compositions were elaborated by metal organic chemical vapor deposition (MOCVD) on GaAs (001) substrate. Structural study using High resolution X-ray diffraction (HRXRD) spectroscopy and Atomic Force Microscopy (AFM) have been used to estimate the boron fraction. The luminescence keys were carried out as functions of temperature in the range 10-300 K, by the techniques of photoluminescence (PL). The low PL temperature has shown an abnormal emission appeared at low energy side witch attributed to the recombination through the deep levels. In all samples, the PL peak energy and the full width at half maximum (FWHM), present an anomalous behavior as a result of the competition process between localized and delocalized carriers. We propose the Localized-state Ensemble model to explain the unusual photoluminescence behaviors. Electrical carriers generation, thermal escape, recapture, radiative and non-radiative lifetime are taken into account. The temperature-dependent photoluminescence measurements were found to be in reasonable agreement with the model of localized states. We controlled the evolution of such parameters versus composition by varying the V/III ratio to have a quantitative and qualitative understanding of the recombination mechanisms. At high temperature, the model can be approximated to the band-tail-state emission.

Implementation of new integrated evaporation equipment for the preparation of 238U targets and improvement of the deposition process

NASA Astrophysics Data System (ADS)

Vanleeuw, D.; Lewis, D.; Moens, A.; Sibbens, G.; Wiss, T.

2018-05-01

Measurement of neutron cross section data is a core activity of the JRC-Directorate G for Nuclear Safety and Security in Geel. After a period of reduced activity and in line with a renewed interest for nuclear data required for GenIV reactors and waste minimization, the demand for high quality actinide targets increased. Physical vapour deposition by thermal evaporation is a key technique to prepare homogeneous thin actinide layers, but due to ageing effects the earlier in-house developed equipment can no longer provide the required quality. Because of a current lack of experience and human resources cooperation with private companies is required for the development of new deposition equipment directly integrated in a glove box. In this paper we describe the design, implementation and validation of the first commercial actinide evaporator in a glove box as well as the optimization of the deposition process. Highly enriched 238U3O8 was converted to 238UF4 powder and several deposition runs were performed on different substrates. The deposition parameters were varied and defined in order to guarantee physical and chemical stable homogeneous UF4 layers, even on polished substrates which was not longer feasible with the older equipment. The stability problem is discussed in view of the thin layer growth by physical vapour deposition and the influence of the deposition parameters on the layer quality. The deposits were characterized for the total mass by means of substitution weighing and for the areal density of 238U by means of alpha particle counting and thermal ionization mass spectrometry (TIMS). The quality of the layer was visually evaluated and by means of stereo microscopy and auto radiography.

High and Low Energy Proton Radiation Damage in p/n InP MOCVD Solar Cells

NASA Technical Reports Server (NTRS)

Rybicki, George; Weinberg, Irv; Scheiman, Dave; Vargas-Aburto, Carlos; Uribe, Roberto

1995-01-01

InP p(+)/n/n(+) solar cells, fabricated by metal organic chemical vapor deposition, (MOCVD) were irradiated with 0.2 MeV and 10 MeV protons to a fluence of 10(exp 13)/sq cm. The power output degradation, IV behavior, carrier concentration and defect concentration were observed at intermediate points throughout the irradiations. The 0.2 MeV proton-irradiated solar cells suffered much greater and more rapid degradation in power output than those irradiated with 10 MeV protons. The efficiency losses were accompanied by larger increases in the recombination currents in the 0.2 MeV proton-irradiated solar cells. The low energy proton irradiations also had a larger impact on the series resistance of the solar cells. Despite the radiation induced damage, the carrier concentration in the base of the solar cells showed no reduction after 10 MeV or 0.2 MeV proton irradiations and even increased during irradiation with 0.2 MeV protons. In a deep level transient spectroscopy (DLTS) study of the irradiated samples, the minority carrier defects H4 and H5 at E(sub v) + 0.33 and E(sub v) + 0.52 eV and the majority carrier defects E7 and El0 at E(sub c) - 0.39 and E(sub c) - 0.74 eV, were observed. The defect introduction rates for the 0.2 MeV proton irradiations were about 20 times higher than for the 10 MeV proton irradiations. The defect El0, observed here after irradiation, has been shown to act as a donor in irradiated n-type InP and may be responsible for obscuring carrier removal. The results of this study are consistent with the much greater damage produced by low energy protons whose limited range causes them to stop in the active region of the solar cell.

Strain-balanced InAs/GaSb type-II superlattice structures and photodiodes grown on InAs substrates by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Huang, Yong; Ryou, Jae-Hyun; Dupuis, Russell D.; Zuo, Daniel; Kesler, Benjamin; Chuang, Shun-Lien; Hu, Hefei; Kim, Kyou-Hyun; Ting Lu, Yen; Hsieh, K. C.; Zuo, Jian-Min

2011-07-01

We propose and demonstrate strain-balanced InAs/GaSb type-II superlattices (T2SLs) grown on InAs substrates employing GaAs-like interfacial (IF) layers by metalorganic chemical vapor deposition (MOCVD) for effective strain management, simplified growth scheme, improved materials crystalline quality, and reduced substrate absorption. The in-plane compressive strain from the GaSb layers in the T2SLs on the InAs was completely balanced by the GaAs-like IF layers formed by controlled precursor carry-over and anion exchange effects, avoiding the use of complicated IF layers and precursor switching schemes that were used for the MOCVD growth of T2SLs on GaSb. An infrared (IR) p-i-n photodiode structure with 320-period InAs/GaSb T2SLs on InAs was grown and the fabricated devices show improved performance characteristics with a peak responsivity of ˜1.9 A/W and a detectivity of ˜6.78 × 109 Jones at 8 μm at 78 K. In addition, the InAs buffer layer and substrate show a lower IR absorption coefficient than GaSb substrates in most of the mid- and long-IR spectral range.

Preparation of fungal conidia impacts their susceptibility to inactivation by ethanol vapours.

PubMed

Dao, Thien; Dantigny, Philippe

2009-11-15

A common protocol employed for the preparation of conidia employs flooding a fungal colony grown on semi-solid media under optimum conditions with an aqueous solution. In contrast, conidia produced in a natural environment are usually not hydrated when disseminated in air and can be produced under water stress. In order to simulate the latter conditions, cultures were grown at different water activities and conidia were dry-harvested on the lid by turning the dishes upside-down then gently tapping the bottom of the box. This study aimed at assessing the effect of the preparation of fungal conidia on their inactivation by ethanol vapours. Firstly ethanol vapours (either 0.30 or 0.45 kPa) were applied to conidia obtained from the standardised protocol and to dry-harvested conidia for some species of Penicillium. While all dry-harvested conidia remained viable after 24 h of treatment, about 1.0, 3.5 and 2.5 log(10) reductions were observed for hydrated conidia of Penicillium chrysogenum, Penicillium digitatum and Penicillium italicum respectively. Secondly ethanol vapours (0.67 kPa) were applied to dry-harvested conidia obtained from cultures grown at 0.99 a(w) and at reduced water activities. For all species, the susceptibility to ethanol vapours of conidia obtained at 0.99 a(w) was significantly greater than that of conidia obtained at reduced water activities. Conidia produced in a natural environment under non-optimal conditions would be much more resistant to ethanol vapours than those produced in the laboratory. This phenomenon may be due to a reduced intracellular water activity of dry-harvested conidia.

Characteristics of indium-gallium-nitride multiple-quantum-well blue laser diodes grown by MOCVD

NASA Astrophysics Data System (ADS)

Mack, M. P.; Abare, A. C.; Hansen, M.; Kozodoy, P.; Keller, S.; Mishra, U.; Coldren, L. A.; DenBaars, S. P.

1998-06-01

Room temperature (RT) pulsed operation of blue (420 nm) nitride-based multi-quantum well (MQW) laser diodes grown on c-plane sapphire substrates has been demonstrated. Atmospheric pressure MOCVD was used to grow the active region of the device which consisted of a 10 pair In 0.21Ga 0.79N (2.5 nm)/In 0.07Ga 0.93N (5 nm) InGaN MQW. Threshold current densities as low as 12.6 kA/cm 2 were observed for 10×1200 μm lasers with uncoated reactive ion etched (RIE) facets. The emission is strongly TE polarized and has a sharp transition in the far-field pattern above threshold. Laser diodes were tested under pulsed conditions lasted up to 6 h at room temperature.

Indium arsenide-on-SOI MOSFETs with extreme lattice mismatch

NASA Astrophysics Data System (ADS)

Wu, Bin

Both molecular beam epitaxy (MBE) and metal organic chemical vapor deposition (MOCVD) have been used to explore the growth of InAs on Si. Despite 11.6% lattice mismatch, planar InAs structures have been observed by scanning electron microscopy (SEM) when nucleating using MBE on patterned submicron Si-on-insulator (SOI) islands. Planar structures of size as large as 500 x 500 nm 2 and lines of width 200 nm and length a few microns have been observed. MOCVD growth of InAs also generates single grain structures on Si islands when the size is reduced to 100 x 100 nm2. By choosing SOI as the growth template, selective growth is enabled by MOCVD. Post-growth pattern-then-anneal process, in which MOCVD InAs is deposited onto unpatterned SOI followed with patterning and annealing of InAs-on-Si structure, is found to change the relative lattice parameters of encapsulated 17/5 nm InAs/Si island. Observed from transmission electron diffraction (TED) patterns, the lattice mismatch of 17/5 nm InAs/Si island reduces from 11.2 to 4.2% after being annealed at 800°C for 30 minutes. High-k Al2O3 dielectrics have been deposited by both electron-beam-enabled physical vapor deposition (PVD) and atomic layer deposition (ALD). Films from both techniques show leakage currents on the order of 10-9A/cm2, at ˜1 MV/cm electric field, breakdown field > ˜6 MV/cm, and dielectric constant > 6, comparable to those of reported ALD prior arts by Groner. The first MOSFETs with extreme lattice mismatch InAs-on-SOI channels using PVD Al2O3 as the gate dielectric are characterized. Channel recess was used to improve the gate control of the drain current.

Metal organic vapour-phase epitaxy growth of GaN wires on Si (111) for light-emitting diode applications

PubMed Central

2013-01-01

GaN wires are grown on a Si (111) substrate by metal organic vapour-phase epitaxy on a thin deposited AlN blanket and through a thin SiNx layer formed spontaneously at the AlN/Si interface. N-doped wires are used as templates for the growth of core-shell InGaN/GaN multiple quantum wells coated by a p-doped shell. Standing single-wire heterostructures are connected using a metallic tip and a Si substrate backside contact, and the electroluminescence at room temperature and forward bias is demonstrated at 420 nm. This result points out the feasibility of lower cost nitride-based wires for light-emitting diode applications. PMID:23391377

Ballistic transport in graphene grown by chemical vapor deposition

DOE Office of Scientific and Technical Information (OSTI.GOV)

Calado, V. E.; Goswami, S.; Xu, Q.

2014-01-13

In this letter, we report the observation of ballistic transport on micron length scales in graphene synthesised by chemical vapour deposition (CVD). Transport measurements were done on Hall bar geometries in a liquid He cryostat. Using non-local measurements, we show that electrons can be ballistically directed by a magnetic field (transverse magnetic focussing) over length scales of ∼1 μm. Comparison with atomic force microscope measurements suggests a correlation between the absence of wrinkles and the presence of ballistic transport in CVD graphene.

Effect of drilling fluid systems and temperature on oil mist and vapour levels generated from shale shaker.

PubMed

Steinsvåg, Kjersti; Galea, Karen S; Krüger, Kirsti; Peikli, Vegard; Sánchez-Jiménez, Araceli; Sætvedt, Esther; Searl, Alison; Cherrie, John W; van Tongeren, Martie

2011-05-01

Workers in the drilling section of the offshore petroleum industry are exposed to air pollutants generated by drilling fluids. Oil mist and oil vapour concentrations have been measured in the drilling fluid processing areas for decades; however, little work has been carried out to investigate exposure determinants such as drilling fluid viscosity and temperature. A study was undertaken to investigate the effect of two different oil-based drilling fluid systems and their temperature on oil mist, oil vapour, and total volatile organic compounds (TVOC) levels in a simulated shale shaker room at a purpose-built test centre. Oil mist and oil vapour concentrations were sampled simultaneously using a sampling arrangement consisting of a Millipore closed cassette loaded with glass fibre and cellulose acetate filters attached to a backup charcoal tube. TVOCs were measured by a PhoCheck photo-ionization detector direct reading instrument. Concentrations of oil mist, oil vapour, and TVOC in the atmosphere surrounding the shale shaker were assessed during three separate test periods. Two oil-based drilling fluids, denoted 'System 2.0' and 'System 3.5', containing base oils with a viscosity of 2.0 and 3.3-3.7 mm(2) s(-1) at 40°C, respectively, were used at temperatures ranging from 40 to 75°C. In general, the System 2.0 yielded low oil mist levels, but high oil vapour concentrations, while the opposite was found for the System 3.5. Statistical significant differences between the drilling fluid systems were found for oil mist (P = 0.025),vapour (P < 0.001), and TVOC (P = 0.011). Increasing temperature increased the oil mist, oil vapour, and TVOC levels. Oil vapour levels at the test facility exceeded the Norwegian oil vapour occupational exposure limit (OEL) of 30 mg m(-3) when the drilling fluid temperature was ≥50°C. The practice of testing compliance of oil vapour exposure from drilling fluids systems containing base oils with viscosity of ≤2.0 mm(2) s(-1) at 40�

Solvent vapour monitoring in work space by solid phase micro extraction.

PubMed

Li, K; Santilli, A; Goldthorp, M; Whiticar, S; Lambert, P; Fingas, M

2001-05-07

Solid phase micro extraction (SPME) is a fast, solvent-less alternative to conventional charcoal tube sampling/carbon disulfide extraction for volatile organic compounds (VOC). In this work, SPME was compared to the active sampling technique in a typical lab atmosphere. Two different types of fibre coatings were evaluated for solvent vapour at ambient concentration. A general purpose 100 microm film polydimethylsiloxane (PDMS) fibre was found to be unsuitable for VOC work, despite the thick coating. The mixed-phase carboxen/PDMS fibre was found to be suitable. Sensitivity of the SPME was far greater than charcoal sorbent tube method. Calibration studies using typical solvent such as dichloromethane (DCM), benzene (B) and toluene (T) showed an optimal exposure time of 5 min, with a repeatability of less than 20% for a broad spectrum of organic vapour. Minimum detectable amount for DCM is in the range of 0.01 microg/l (0.003 ppmv). Variation among different fibres was generally within 30% at a vapour concentration of 1 microg DCM/l, which was more than adequate for field monitoring purpose. Adsorption characteristics and calibration procedures were studied. An actual application of SPME was carried out to measure background level of solvent vapour at a bench where DCM was used extensively. Agreement between the SPME and the charcoal sampling method was generally within a factor of two. No DCM concentration was found to be above the regulatory limit of 50 ppmv.

Magnesium isotope evidence that accretional vapour loss shapes planetary compositions

PubMed Central

Hin, Remco C.; Coath, Christopher D.; Carter, Philip J.; Nimmo, Francis; Lai, Yi-Jen; Pogge von Strandmann, Philip A.E.; Willbold, Matthias; Leinhardt, Zoë M.; Walter, Michael J.; Elliott, Tim

2017-01-01

It has long been recognised that Earth and other differentiated planetary bodies are chemically fractionated compared to primitive, chondritic meteorites and by inference the primordial disk from which they formed. An important question has been whether the notable volatile depletions of planetary bodies are a consequence of accretion1, or inherited from prior nebular fractionation2. The isotopic compositions of the main constituents of planetary bodies can contribute to this debate3–6. Using a new analytical approach to address key issues of accuracy inherent in conventional methods, we show that all differentiated bodies have isotopically heavier magnesium compositions than chondritic meteorites. We argue that possible magnesium isotope fractionation during condensation of the solar nebula, core formation and silicate differentiation cannot explain these observations. However, isotopic fractionation between liquid and vapour followed by vapour escape during accretionary growth of planetesimals generates appropriate residual compositions. Our modelling implies that the isotopic compositions of Mg, Si and Fe and the relative abundances of the major elements of Earth, and other planetary bodies, are a natural consequence of substantial (~40% by mass) vapour loss from growing planetesimals by this mechanism. PMID:28959965

Land cover change and water vapour flows: learning from Australia.

PubMed Central

Gordon, Line; Dunlop, Michael; Foran, Barney

2003-01-01

Australia is faced with large-scale dryland salinization problems, largely as a consequence of the clearing of native vegetation for cropland and grassland. We estimate the change in continental water vapour flow (evapotranspiration) of Australia during the past 200 years. During this period there has been a substantial decrease in woody vegetation and a corresponding increase in croplands and grasslands. The shift in land use has caused a ca. 10% decrease in water vapour flows from the continent. This reduction corresponds to an annual freshwater flow of almost 340 km(3). The society-induced alteration of freshwater flows is estimated at more than 15 times the volume of run-off freshwater that is diverted and actively managed in the Australian society. These substantial water vapour flow alterations were previously not addressed in water management but are now causing serious impacts on the Australian society and local economies. Global and continental freshwater assessments and policy often neglects the interplay between freshwater flows and landscape dynamics. Freshwater issues on both regional and global levels must be rethought and the interplay between terrestrial ecosystems and freshwater better incorporated in freshwater and ecosystem management. PMID:14728792

Review of vortex tube expansion in vapour compression refrigeration system

NASA Astrophysics Data System (ADS)

Liu, Yefeng; Yu, Jun

2018-05-01

A vortex tube expansion device replacing the throttle valve is proposed to improve the efficiency of vapour compression refrigeration cycle by reducing the loss of irreversibility in expansion process. The vortex tube is well-suited for these applications because it is simple, compact, light, quiet. Thus, this paper presents an overview of the thermodynamic analysis of vapour compression refrigeration cycle with vortex tube expansion device using different refrigerants. The paper also reviews the experiments and the calculations presented in previous studies on temperature separation in the vortex tube. The temperature separation mechanism and the flow-field inside the vortex tubes is explored by measuring the pressure, velocity, and temperature fields.

GaN-based vertical-cavity surface-emitting lasers with tunnel junction contacts grown by metal-organic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Lee, SeungGeun; Forman, Charles A.; Lee, Changmin; Kearns, Jared; Young, Erin C.; Leonard, John T.; Cohen, Daniel A.; Speck, James S.; Nakamura, Shuji; DenBaars, Steven P.

2018-06-01

We report the first demonstration of III–nitride vertical-cavity surface-emitting lasers (VCSELs) with tunnel junction (TJ) intracavity contacts grown completely by metal–organic chemical vapor deposition (MOCVD). For the TJs, n++-GaN was grown on in-situ activated p++-GaN after buffered HF surface treatment. The electrical properties and epitaxial morphologies of the TJs were first investigated on TJ LED test samples. A VCSEL with a TJ intracavity contact showed a lasing wavelength of 408 nm, a threshold current of ∼15 mA (10 kA/cm2), a threshold voltage of 7.8 V, a maximum output power of 319 µW, and a differential efficiency of 0.28%.

Vapour-mediated sensing and motility in two-component droplets

NASA Astrophysics Data System (ADS)

Cira, N. J.; Benusiglio, A.; Prakash, M.

2015-03-01

Controlling the wetting behaviour of liquids on surfaces is important for a variety of industrial applications such as water-repellent coatings and lubrication. Liquid behaviour on a surface can range from complete spreading, as in the `tears of wine' effect, to minimal wetting as observed on a superhydrophobic lotus leaf. Controlling droplet movement is important in microfluidic liquid handling, on self-cleaning surfaces and in heat transfer. Droplet motion can be achieved by gradients of surface energy. However, existing techniques require either a large gradient or a carefully prepared surface to overcome the effects of contact line pinning, which usually limit droplet motion. Here we show that two-component droplets of well-chosen miscible liquids such as propylene glycol and water deposited on clean glass are not subject to pinning and cause the motion of neighbouring droplets over a distance. Unlike the canonical predictions for these liquids on a high-energy surface, these droplets do not spread completely but exhibit an apparent contact angle. We demonstrate experimentally and analytically that these droplets are stabilized by evaporation-induced surface tension gradients and that they move in response to the vapour emitted by neighbouring droplets. Our fundamental understanding of this robust system enabled us to construct a wide variety of autonomous fluidic machines out of everyday materials.

On the relationship between atmospheric water vapour transport and extra-tropical cyclones development

NASA Astrophysics Data System (ADS)

Ferreira, Juan A.; Liberato, Margarida L. R.; Ramos, Alexandre M.

2016-08-01

In this study we seek to investigate the role of atmospheric water vapour on the intensification of extra-tropical cyclones over the North Atlantic Ocean and more specifically to investigate the linkage between atmospheric rivers' conditions leading to the explosive development of extra-tropical cyclones. Several WRF-ARW simulations for three recent extra-tropical storms that had major negative socio-economic impacts in the Iberian Peninsula and south-western Europe (Klaus, 2009; Gong, 2013 and Stephanie, 2014) are performed in which the water vapour content of the initial and boundary conditions are tuned. Analyses of the vertically integrated vapour transport show the dependence of the storms' development on atmospheric water vapour. In addition, results also show changes in the shape of the jet stream resulting in a reduction of the upper wind divergence, which in turn affects the intensification of the extra-tropical cyclones studied. This study suggests that atmospheric rivers tend to favour the conditions for explosive extra-tropical storms' development in the three case studies, as simulations performed without the existence of atmospheric rivers produce shallow mid-latitude cyclones, that is, cyclones that are not so intense as those on the reference simulations.

Visible-light vertical-cavity surface-emitting lasers grown by solid-source molecular beam epitaxy

NASA Astrophysics Data System (ADS)

Saarinen, Mika J.; Xiang, Ning; Dumitrescu, Mihail M.; Vilokkinen, Ville; Melanen, Petri; Orsila, Seppo; Uusimaa, Petteri; Savolainen, Pekka; Pessa, Markus

2001-05-01

Visible vertical-cavity surface-emitting lasers (VCSELs) are potential light sources for polymer optical fibre (POF) data transmission systems. Minimum attenuation of light in standard PMMA-POFs occurs at about 650 nm. For POFs of a few tens of meters in length VCSELs at slightly longer wavelengths (670 - 690 nm) are also acceptable. So far, the visible VCSELs have been grown by metal organic chemical vapour deposition (MOCVD). They may also be grown by a novel variant of molecular beam epitaxy (MBE), a so-called all-solid-source MBE or SSMBE. In this paper, we describe growth of the first visible-light VCSELs by SSMBE and present the main results obtained. In particular, we have achieved lasing action at a sub-milliamp cw drive current for a VCSEL having the emission window of 8um in diameter, while a 10um device exhibited an external quantum efficiency of 6.65% in CW operation at room temperature. The lasing action up to temperature of 45°C has been demonstrated.

Numerical Simulation of Pulsation Flow in the Vapour Channel of Short Low Temperature Heat Pipes at High Heat Loads

NASA Astrophysics Data System (ADS)

Seryakov, A. V.; Konkin, A. V.

2017-11-01

The results of the numerical simulation of pulsations in the Laval-liked vapour channel of short low-temperature range heat pipes (HPs) are presented. The numerical results confirmed the experimentally obtained increase of the frequency of pulsations in the vapour channel of short HPs with increasing overheat of the porous evaporator relative to the boiling point of the working fluid. The occurrence of pressure pulsations inside the vapour channel in a short HPs is a complex phenomenon associated with the boiling beginning in the capillary-porous evaporator at high heat loads, and appearance the excess amount of vapour above it, leading to the increase in pressure P to a value at which the boiling point TB of the working fluid becomes higher than the evaporator temperature Tev. Vapour clot spreads through the vapour channel and condense, and then a rarefaction wave return from condenser in the evaporator, the boiling in which is resumed and the next cycle of the pulsations is repeated. Numerical simulation was performed using finite element method implemented in the commercial program ANSYS Multiphisics 14.5 in the two-dimensional setting of axis symmetric moist vapour flow with third kind boundary conditions.

Time-dependent calculations of molten pool formation and thermal plasma with metal vapour in gas tungsten arc welding

NASA Astrophysics Data System (ADS)

Tanaka, M.; Yamamoto, K.; Tashiro, S.; Nakata, K.; Yamamoto, E.; Yamazaki, K.; Suzuki, K.; Murphy, A. B.; Lowke, J. J.

2010-11-01

A gas tungsten arc (GTA) was modelled taking into account the contamination of the plasma by metal vapour from the molten anode. The whole region of GTA atmosphere including the tungsten cathode, the arc plasma and the anode was treated using a unified numerical model. A viscosity approximation was used to express the diffusion coefficient in terms of viscosity of the shielding gas and metal vapour. The transient two-dimensional distributions of temperature, velocity of plasma flow and iron vapour concentration were predicted, together with the molten pool as a function of time for a 150 A arc current at atmospheric pressure, both for helium and argon gases. It was shown that the thermal plasma in the GTA was influenced by iron vapour from the molten pool surface and that the concentration of iron vapour in the plasma was dependent on the temperature of the molten pool. GTA on high sulfur stainless steel was calculated to discuss the differences between a low sulfur and a high sulfur stainless steel anode. Helium was selected as the shielding gas because a helium GTA produces more metal vapour than an argon GTA. In the GTA on a high sulfur stainless steel anode, iron vapour and current path were constricted. Radiative emission density in the GTA on high sulfur stainless steel was also concentrated in the centre area of the arc plasma together with the iron vapour although the temperature distributions were almost the same as that in the case of a low sulfur stainless steel anode.

Temperature effect on the growth of Au-free InAs and InAs/GaSb heterostructure nanowires on Si substrate by MOCVD

NASA Astrophysics Data System (ADS)

Kakkerla, Ramesh Kumar; Anandan, Deepak; Hsiao, Chih-Jen; Yu, Hung Wei; Singh, Sankalp Kumar; Chang, Edward Yi

2018-05-01

We demonstrate the growth of vertically aligned Au-free InAs and InAs/GaSb heterostructure nanowires on Si (1 1 1) substrate by Metal Organic Chemical Vapor Deposition (MOCVD). The effect of growth temperature on the morphology and growth rate of the InAs and InAs/GaSb heterostructure nanowires (NWs) is investigated. Control over diameter and length of the InAs NWs and the GaSb shell thickness was achieved by using growth temperature. As the GaSb growth temperature increase, GaSb radial growth rate increases due to the increase in alkyl decomposition at the substrate surface. Diffusivity of the adatoms increases as the GaSb growth temperature increase which results in tapered GaSb shell growth. Scanning Electron Microscope (SEM) and Transmission Electron Microscope (TEM) measurements revealed that the morphology and shell thickness can be tuned by the growth temperature. Electron microscopy also shows the formation of GaSb both in radial and axial directions outside the InAs NW core can be controlled by the growth temperature. This study demonstrates the control over InAs NWs growth and the GaSb shell thickness can be achieved through proper growth temperature control, such technique is essential for the growth of nanowire for future nano electronic devices, such as Tunnel FET.

Towards outperforming conventional sensor arrays with fabricated individual photonic vapour sensors inspired by Morpho butterflies

PubMed Central

Potyrailo, Radislav A.; Bonam, Ravi K.; Hartley, John G.; Starkey, Timothy A.; Vukusic, Peter; Vasudev, Milana; Bunning, Timothy; Naik, Rajesh R.; Tang, Zhexiong; Palacios, Manuel A.; Larsen, Michael; Le Tarte, Laurie A.; Grande, James C.; Zhong, Sheng; Deng, Tao

2015-01-01

Combining vapour sensors into arrays is an accepted compromise to mitigate poor selectivity of conventional sensors. Here we show individual nanofabricated sensors that not only selectively detect separate vapours in pristine conditions but also quantify these vapours in mixtures, and when blended with a variable moisture background. Our sensor design is inspired by the iridescent nanostructure and gradient surface chemistry of Morpho butterflies and involves physical and chemical design criteria. The physical design involves optical interference and diffraction on the fabricated periodic nanostructures and uses optical loss in the nanostructure to enhance the spectral diversity of reflectance. The chemical design uses spatially controlled nanostructure functionalization. Thus, while quantitation of analytes in the presence of variable backgrounds is challenging for most sensor arrays, we achieve this goal using individual multivariable sensors. These colorimetric sensors can be tuned for numerous vapour sensing scenarios in confined areas or as individual nodes for distributed monitoring. PMID:26324320

Mechanical and physicochemical properties of AlN thin films obtained by pulsed laser deposition

NASA Astrophysics Data System (ADS)

Cibert, C.; Tétard, F.; Djemia, P.; Champeaux, C.; Catherinot, A.; Tétard, D.

2004-10-01

AlN thin films have been deposited on Si(100) substrates by a pulsed laser deposition method. The deposition parameters (pressure, temperature, purity of target) play an important role in the mechanical and physicochemical properties. The films have been characterized using X-ray diffraction, atomic force microscopy, Brillouin light scattering, Fourier transform infrared spectroscopy and wettability testing. With a high purity target of AlN and a temperature deposition of 750 ∘C, the measured Rayleigh wave velocity is close to the one previously determined for AlN films grown at high temperature by metal-organic chemical vapour deposition. Growth of nanocrystalline AlN at low temperature and of AlN film with good crystallinity for samples deposited at higher temperature is confirmed by infrared spectroscopy, as it was by atomic force microscopy, in agreement with X-ray diffraction results. A high hydrophobicity has been measured with zero polar contribution for the surface energy. These results confirm that films made by pulsed laser deposition of pure AlN at relatively low temperature have good prospects for microelectromechanical systems applications.

Fog deposition fluxes of water and ions to a mountainous site in Central Europe

NASA Astrophysics Data System (ADS)

Klemm, Otto; Wrzesinsky, Thomas

2007-09-01

Fog and precipitation composition and deposition were measured over a 1-yr period. Ion concentrations were higher in fog than in precipitation by factors of between 6 and 18. The causes of these differences were less dilution of fog water due to non-availability of condensable water vapour, and more efficient transfer of surface emissions to fog water as compared to rain water or snow. Fogwater and dissolved ions depositions were measured with eddy covariance in combination with a bulk fogwater collector. Annual fogwater deposition was 9.4% that of precipitation. The annual deposition of ions through fog was of the same order as that for precipitation. Ammonium, representing local emission sources, had 46% more annual deposition through fog than through precipitation. The fog droplet number and mass size distributions are reported. Fog droplets of 15 μm diameter contribute most to the deposition flux. The variability of processes and parameters contributing to deposition of ions through fog (ion concentrations in fog water, liquid water content in air, fog duration and turbulence) is high.

Pilot-scale electron cyclotron resonance-metal organic chemical vapor deposition system for the preparation of large-area fluorine-doped SnO{sub 2} thin films

DOE Office of Scientific and Technical Information (OSTI.GOV)

Jeon, Bup Ju; Hudaya, Chairul; Center for Energy Convergence, Green City Research Institute, Korea Institute of Science and Technology, Hwarangno 14 gil 5, Seoul 136-791

2016-05-15

The authors report the surface morphology, optical, electrical, thermal and humidity impacts, and electromagnetic interference properties of fluorine-doped tin oxide (SnO{sub 2}:F or “FTO”) thin films on a flexible polyethylene terephthalate (PET) substrate fabricated by a pilot-scale electron cyclotron resonance–metal organic chemical vapor deposition (PS ECR-MOCVD). The characteristics of large area FTO thin films were compared with a commercially available transparent conductive electrode made of tin-doped indium oxide (ITO), prepared with an identical film and PET thickness of 125 nm and 188 μm, respectively. The results revealed that the as-prepared FTO thin films exhibited comparable performances with the incumbent ITO films, includingmore » a high optical transmittance of 97% (substrate-subtracted), low electrical resistivity of about 5 × 10{sup −3} Ω cm, improved electrical and optical performances due to the external thermal and humidity impact, and an excellent shielding effectiveness of electromagnetic interference of nearly 2.3 dB. These excellent performances of the FTO thin films were strongly attributed to the design of the PS ECR-MOCVD, which enabled a uniform plasma environment resulting from a proper mixture of electromagnetic profiles and microwave power.« less

Distillation with Vapour Compression. An Undergraduate Experimental Facility.

ERIC Educational Resources Information Center

Pritchard, Colin

1986-01-01

Discusses the need to design distillation columns that are more energy efficient. Describes a "design and build" project completed by two college students aimed at demonstrating the principles of vapour compression distillation in a more energy efficient way. General design specifications are given, along with suggestions for teaching…

Lattice Matched Iii-V IV Semiconductor Heterostructures: Metalorganic Chemical Vapor Deposition and Remote Plasma Enhanced Chemical Vapor Deposition.

NASA Astrophysics Data System (ADS)

Choi, Sungwoo

1992-01-01

This thesis describes the growth and characterization of wide gap III-V compound semiconductors such as aluminum gallium arsenide (Al_{rm x} Ga_{rm 1-x}As), gallium nitride (GaN), and gallium phosphide (GaP), deposited by the metalorganic chemical vapor deposition (MOCVD) and remote plasma enhanced chemical vapor deposition (Remote PECVD). In the first part of the thesis, the optimization of GaAs and Al_{rm x}Ga _{rm 1-x}As hetero -epitaxial layers on Ge substrates is described in the context of the application in the construction of cascade solar cells. The emphasis on this study is on the trade-offs in the choice of the temperature related to increasing interdiffusion/autodoping and increasing perfection of the epilayer with increasing temperature. The structural, chemical, optical, and electrical properties of the heterostructures are characterized by x-ray rocking curve measurement, scanning electron microscopy (SEM), electron beam induced current (EBIC), cross-sectional transmission electron microscopy (X-TEM), Raman spectroscopy, secondary ion mass spectrometry (SIMS), and steady-state and time-resolved photoluminescence (PL). Based on the results of this work the optimum growth temperature is 720^circC. The second part of the thesis describes the growth of GaN and GaP layers on silicon and sapphire substrates and the homoepitaxy of GaP by remote PECVD. I have designed and built an ultra high vacuum (UHV) deposition system which includes: the gas supply system, the pumping system, the deposition chamber, the load-lock chamber, and the waste disposal system. The work on the deposition of GaN on Si and sapphire focuses onto the understanding of the growth kinetics. In addition, Auger electron spectroscopy (AES) for surface analysis, x-ray diffraction methods and microscopic analyses using SEM and TEM for structural characterization, infrared (IR) and ultraviolet (UV) absorption measurements for optical characterization, and electrical characterization results

Effects of Mg pre-flow, memory, and diffusion on the growth of p-GaN with MOCVD (Conference Presentation)

NASA Astrophysics Data System (ADS)

Tu, Charng-Gan; Chen, Hao-Tsung; Chen, Sheng-Hung; Chao, Chen-Yao; Kiang, Yean-Woei; Yang, Chih-Chung

2017-02-01

In MOCVD growth, two key factors for growing a p-type structure, when the modulation growth or delta-doping technique is used, include Mg memory and diffusion. With high-temperature growth (>900 degree C), doped Mg can diffuse into the under-layer. Also, due to the high-pressure growth and growth chamber coating in MOCVD, plenty Mg atoms exist in the growth chamber for a duration after Mg supply is ended. In this situation, Mg doping continues in the following designated un-doped layers. In this paper, we demonstrate the study results of Mg preflow, memory, and diffusion. The results show that pre-flow of Mg into the growth chamber can lead to a significantly higher Mg doping concentration in growing a p-GaN layer. In other words, a duration for Mg buildup is required for high Mg incorporation. Based on SIMS study, we find that with the pre-flow growth, a high- and a low-doping p-GaN layer are formed. The doping concentration difference between the two layers is about 10 times. The thickness of the high- (low-) doping layer is about 40 (65) nm. The growth of the high-doping layer starts 10-15 min after Mg supply starts (Mg buildup time). The diffusion length of Mg into the AlGaN layer beneath (Mg content reduced to <5%) is about 10 nm. The memory time of Mg in the growth chamber is about 60 min, after which the Mg doping concentration is reduced to <1%.

High efficiency coherent optical memory with warm rubidium vapour

PubMed Central

Hosseini, M.; Sparkes, B.M.; Campbell, G.; Lam, P.K.; Buchler, B.C.

2011-01-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory. PMID:21285952

High efficiency coherent optical memory with warm rubidium vapour.

PubMed

Hosseini, M; Sparkes, B M; Campbell, G; Lam, P K; Buchler, B C

2011-02-01

By harnessing aspects of quantum mechanics, communication and information processing could be radically transformed. Promising forms of quantum information technology include optical quantum cryptographic systems and computing using photons for quantum logic operations. As with current information processing systems, some form of memory will be required. Quantum repeaters, which are required for long distance quantum key distribution, require quantum optical memory as do deterministic logic gates for optical quantum computing. Here, we present results from a coherent optical memory based on warm rubidium vapour and show 87% efficient recall of light pulses, the highest efficiency measured to date for any coherent optical memory suitable for quantum information applications. We also show storage and recall of up to 20 pulses from our system. These results show that simple warm atomic vapour systems have clear potential as a platform for quantum memory.

The Effect of Growth Environment on the Morphological and Extended Defect Evolution in GaN Grown by Metalorganic Chemical Vapor Deposition

NASA Astrophysics Data System (ADS)

Fini, P.; Wu, X.; Tarsa, E.; Golan, Y.; Srikant, V.; Keller, S.; Denbaars, S.; Speck, J.

1998-08-01

The evolution of morphology and associated extended defects in GaN thin films grown on sapphire by metalorganic chemical vapor deposition (MOCVD) are shown to depend strongly on the growth environment. For the commonly used two-step growth process, a change in growth parameter such as reactor pressure influences the initial high temperature (HT) GaN growth mechanism. By means of transmission electron microscopy (TEM), atomic force microscopy (AFM), and high resolution X-ray diffraction (HRXRD) measurements, it is shown that the initial density of HT islands on the nucleation layer (NL) and subsequently the threading dislocation density in the HT GaN film may be directly controlled by tailoring the initial HT GaN growth conditions.

The chemical deposition of semiconductor thin-films for photovoltaic devices

NASA Astrophysics Data System (ADS)

Breen, Marc Louis

Initially, possible precursors to metal sulfide films formed by metal-organic chemical vapor deposition (MOCVD), the standard commercial technique for manufacturing photovoltaic semiconductors, were synthesized. Triple-junction GaInP 2/GaAs/Ge solar cells, prepared by this method, were studied to understand how chemical properties and material defects can effect the performance of photovoltaic devices. Finally, novel methods for the low-temperature, solution growth of CdS, CdSe, and CuInSe2 photovoltaic materials were targeted which will reduce manufacturing costs and increase the economic feasibility of solar energy conversion. A series of dialkyldithiocarbamate copper, gallium and indium compounds were studied as possible metal sulfide MOCVD precursors. Metal powders were oxidized by dialkylthiurams in 3- or 4-methylpyridine using standard techniques for handling air and moisture-sensitive compounds. Metal chlorides reacted directly with the sodium dialkyldithiocarbamate salts. In these complexes, the metal was found in a roughly octahedral orientation, surrounded by dithiocarbamate ligands and/or solvent molecules. Triple-junction GaInP2/GaAs/Ge cells were composed of thin-films of GaInP2 and GaAs grown monolithically on top of a germanium substrate. Each layer of semiconductor material had a different bandgap and absorbed a different portion of the solar spectrum, thus improving the overall efficiency of the cell. Work focused on dark current-voltage behavior which is known to limit solar cell open-circuit voltage, fill factor, and conversion efficiency. Cells were studied using microscopic and spectroscopic techniques to correlate the effect of physical defects in the materials with poor performance of the devices as evaluated through current vs. voltage measurements. Films of US and CdSe were readily prepared in solution through an "ion-by-ion" deposition of Cd2+ and S2- (or Se 2-) generated from the slow hydrolysis of thiourea (or dimethylthiourea). The bath

Modelling and intepreting the isotopic composition of water vapour in convective updrafts

NASA Astrophysics Data System (ADS)

Bolot, M.; Legras, B.; Moyer, E. J.

2012-08-01

The isotopic compositions of water vapour and its condensates have long been used as tracers of the global hydrological cycle, but may also be useful for understanding processes within individual convective clouds. We review here the representation of processes that alter water isotopic compositions during processing of air in convective updrafts and present a unified model for water vapour isotopic evolution within undiluted deep convective cores, with a special focus on the out-of-equilibrium conditions of mixed phase zones where metastable liquid water and ice coexist. We use our model to show that a combination of water isotopologue measurements can constrain critical convective parameters including degree of supersaturation, supercooled water content and glaciation temperature. Important isotopic processes in updrafts include kinetic effects that are a consequence of diffusive growth or decay of cloud particles within a supersaturated or subsaturated environment; isotopic re-equilibration between vapour and supercooled droplets, which buffers isotopic distillation; and differing mechanisms of glaciation (droplet freezing vs. the Wegener-Bergeron-Findeisen process). As all of these processes are related to updraft strength, droplet size distribution and the retention of supercooled water, isotopic measurements can serve as a probe of in-cloud conditions of importance to convective processes. We study the sensitivity of the profile of water vapour isotopic composition to differing model assumptions and show how measurements of isotopic composition at cloud base and cloud top alone may be sufficient to retrieve key cloud parameters.

Modelling and interpreting the isotopic composition of water vapour in convective updrafts

NASA Astrophysics Data System (ADS)

Bolot, M.; Legras, B.; Moyer, E. J.

2013-08-01

The isotopic compositions of water vapour and its condensates have long been used as tracers of the global hydrological cycle, but may also be useful for understanding processes within individual convective clouds. We review here the representation of processes that alter water isotopic compositions during processing of air in convective updrafts and present a unified model for water vapour isotopic evolution within undiluted deep convective cores, with a special focus on the out-of-equilibrium conditions of mixed-phase zones where metastable liquid water and ice coexist. We use our model to show that a combination of water isotopologue measurements can constrain critical convective parameters, including degree of supersaturation, supercooled water content and glaciation temperature. Important isotopic processes in updrafts include kinetic effects that are a consequence of diffusive growth or decay of cloud particles within a supersaturated or subsaturated environment; isotopic re-equilibration between vapour and supercooled droplets, which buffers isotopic distillation; and differing mechanisms of glaciation (droplet freezing vs. the Wegener-Bergeron-Findeisen process). As all of these processes are related to updraft strength, particle size distribution and the retention of supercooled water, isotopic measurements can serve as a probe of in-cloud conditions of importance to convective processes. We study the sensitivity of the profile of water vapour isotopic composition to differing model assumptions and show how measurements of isotopic composition at cloud base and cloud top alone may be sufficient to retrieve key cloud parameters.

Structural and mechanical properties of CVD deposited titanium aluminium nitride (TiAlN) thin films

NASA Astrophysics Data System (ADS)

Das, Soham; Guha, Spandan; Ghadai, Ranjan; Kumar, Dhruva; Swain, Bibhu P.

2017-06-01

Titanium aluminium nitride (TiAlN) thin films were deposited by chemical vapour deposition using TiO2 powder, Al powder and N2 gas. The morphology and mechanical properties of the films were characterized by scanning electron microscopy and nanoindentation technique, respectively. The structural properties were characterized by Raman spectroscopy and X-ray diffraction. The XRD result shows TiAlN films are of NaCl-type metal nitride structure. Micro-Raman peaks of the TiAlN thin film were observed within 450 and 642 cm-1 for acoustic and optic range, respectively. A maximum hardness and Young modulus up to 22 and 272.15 GPa, respectively, were observed in the TiAlN film deposited at 1200 °C.

Growth of single-layer graphene on Ge (1 0 0) by chemical vapor deposition

NASA Astrophysics Data System (ADS)

Mendoza, C. D.; Caldas, P. G.; Freire, F. L.; Maia da Costa, M. E. H.

2018-07-01

The integration of graphene into nanoelectronic devices is dependent on the availability of direct deposition processes, which can provide uniform, large-area and high-quality graphene on semiconductor substrates such as Ge or Si. In this work, we synthesised graphene directly on p-type Ge (1 0 0) substrates by chemical vapour deposition. The influence of the CH4:H2 flow ratio on the graphene growth was investigated. Raman Spectroscopy, Raman mapping, Scanning Electron Microscopy, Atomic Force Microscopy and Scanning Tunnelling Microscopy/Scanning Tunnelling Spectroscopy results showed that good quality and homogeneous monolayer graphene over a large area can be achieved on Ge substrates directly with optimal growth conditions.

Influence of stress in GaN crystals grown by HVPE on MOCVD-GaN/6H-SiC substrate

PubMed Central

Zhang, Lei; Yu, Jiaoxian; Hao, Xiaopeng; Wu, Yongzhong; Dai, Yuanbin; Shao, Yongliang; Zhang, Haodong; Tian, Yuan

2014-01-01

GaN crystals without cracks were successfully grown on a MOCVD-GaN/6H-SiC (MGS) substrate with a low V/III ratio of 20 at initial growth. With a high V/III ratio of 80 at initial growth, opaque GaN polycrystals were obtained. The structural analysis and optical characterization reveal that stress has a great influence on the growth of the epitaxial films. An atomic level model is used to explain these phenomena during crystal growth. It is found that atomic mobility is retarded by compressive stress and enhanced by tensile stress. PMID:24569601

A microwave satellite water vapour column retrieval for polar winter conditions

DOE Office of Scientific and Technical Information (OSTI.GOV)

Perro, Christopher; Lesins, Glen; Duck, Thomas J.

A new microwave satellite water vapour retrieval for the polar winter atmosphere is presented. The retrieval builds on the work of Miao et al. (2001) and Melsheimer and Heygster (2008), employing auxiliary information for atmospheric conditions and numerical optimization. It was tested using simulated and actual measurements from the Microwave Humidity Sounder (MHS) satellite instruments. Ground truth was provided by the G-band vapour radiometer (GVR) at Barrow, Alaska. For water vapour columns less than 6 kg m -2, comparisons between the retrieval and GVR result in a root mean square (RMS) deviation of 0.39 kg m -2 and a systematic bias of 0.08 kg m -2. These results aremore » compared with RMS deviations and biases at Barrow for the retrieval of Melsheimer and Heygster (2008), the AIRS and MIRS satellite data products, and the ERA-Interim, NCEP, JRA-55, and ASR reanalyses. When applied to MHS measurements, the new retrieval produces a smaller RMS deviation and bias than for the earlier retrieval and satellite data products. The RMS deviations for the new retrieval were comparable to those for the ERA-Interim, JRA-55, and ASR reanalyses; however, the MHS retrievals have much finer horizontal resolution (15 km at nadir) and reveal more structure. The new retrieval can be used to obtain pan-Arctic maps of water vapour columns of unprecedented quality. It may also be applied to measurements from the Special Sensor Microwave/Temperature 2 (SSM/T2), Advanced Microwave Sounding Unit B (AMSU-B), Special Sensor Microwave Imager/Sounder (SSMIS), Advanced Technology Microwave Sounder (ATMS), and Chinese MicroWave Humidity Sounder (MWHS) instruments.« less

Leidenfrost vapour layer moderation of the drag crisis and trajectories of superhydrophobic and hydrophilic spheres falling in water.

PubMed

Vakarelski, Ivan U; Chan, Derek Y C; Thoroddsen, Sigurdur T

2014-08-21

We investigate the dynamic effects of a Leidenfrost vapour layer sustained on the surface of heated steel spheres during free fall in water. We find that a stable vapour layer sustained on the textured superhydrophobic surface of spheres falling through 95 °C water can reduce the hydrodynamic drag by up to 75% and stabilize the sphere trajectory for the Reynolds number between 10(4) and 10(6), spanning the drag crisis in the absence of the vapour layer. For hydrophilic spheres under the same conditions, the transition to drag reduction and trajectory stability occurs abruptly at a temperature different from the static Leidenfrost point. The observed drag reduction effects are attributed to the disruption of the viscous boundary layer by the vapour layer whose thickness depends on the water temperature. Both the drag reduction and the trajectory stabilization effects are expected to have significant implications for development of sustainable vapour layer based technologies.

Properties of meso-Erythritol; phase state, accommodation coefficient and saturation vapour pressure

NASA Astrophysics Data System (ADS)

Emanuelsson, Eva; Tschiskale, Morten; Bilde, Merete

2016-04-01

Introduction Saturation vapour pressure and the associated temperature dependence (enthalpy ΔH), are key parameters for improving predictive atmospheric models. Generally, the atmospheric aerosol community lack experimentally determined values of these properties for relevant organic aerosol compounds (Bilde et al., 2015). In this work we have studied the organic aerosol component meso-Erythritol. Methods Sub-micron airborne particles of meso-Erythritol were generated by nebulization from aqueous solution, dried, and a mono disperse fraction of the aerosol was selected using a differential mobility analyser. The particles were then allowed to evaporate in the ARAGORN (AaRhus Atmospheric Gas phase OR Nano particle) flow tube. It is a temperature controlled 3.5 m long stainless steel tube with an internal diameter of 0.026 m (Bilde et al., 2003, Zardini et al., 2010). Changes in particle size as function of evaporation time were determined using a scanning mobility particle sizer system. Physical properties like air flow, temperature, humidity and pressure were controlled and monitored on several places in the setup. The saturation vapour pressures were then inferred from the experimental results in the MATLAB® program AU_VaPCaP (Aarhus University_Vapour Pressure Calculation Program). Results Following evaporation, meso-Erythriol under some conditions showed a bimodal particle size distribution indicating the formation of particles of two different phase states. The issue of physical phase state, along with critical assumptions e.g. the accommodation coefficient in the calculations of saturation vapour pressures of atmospheric relevant compounds, will be discussed. Saturation vapour pressures from the organic compound meso-Erythritol will be presented at temperatures between 278 and 308 K, and results will be discussed in the context of atmospheric chemistry. References Bilde, M. et al., (2015), Chemical Reviews, 115 (10), 4115-4156. Bilde, M. et. al., (2003

Hydroxyapatite thin films grown by pulsed laser deposition and matrix assisted pulsed laser evaporation: Comparative study

NASA Astrophysics Data System (ADS)

Popescu-Pelin, G.; Sima, F.; Sima, L. E.; Mihailescu, C. N.; Luculescu, C.; Iordache, I.; Socol, M.; Socol, G.; Mihailescu, I. N.

2017-10-01

Pulsed Laser Deposition (PLD) and Matrix Assisted Pulsed Laser Evaporation (MAPLE) techniques were applied for growing hydroxyapatite (HA) thin films on titanium substrates. All experiments were conducted in a reaction chamber using a KrF* excimer laser source (λ = 248 nm, τFWHM ≈ 25 ns). Half of the samples were post-deposition thermally treated at 500 °C in a flux of water vapours in order to restore crystallinity and improve adherence. Coating surface morphologies and topographies specific to the deposition method were evidenced by scanning electron, atomic force microscopy investigations and profilometry. They were shown to depend on deposition technique and also on the post-deposition treatment. Crystalline structure of the coatings evaluated by X-ray diffraction was improved after thermal treatment. Biocompatibility of coatings, cellular adhesion, proliferation and differentiation tests were conducted using human mesenchymal stem cells (MSCs). Results showed that annealed MAPLE deposited HA coatings were supporting MSCs proliferation, while annealed PLD obtained films were stimulating osteogenic differentiation.

Characterization of aqueous interactions of copper-doped phosphate-based glasses by vapour sorption.

PubMed

Stähli, Christoph; Shah Mohammadi, Maziar; Waters, Kristian E; Nazhat, Showan N

2014-07-01

Owing to their adjustable dissolution properties, phosphate-based glasses (PGs) are promising materials for the controlled release of bioinorganics, such as copper ions. This study describes a vapour sorption method that allowed for the investigation of the kinetics and mechanisms of aqueous interactions of PGs of the formulation 50P2O5-30CaO-(20-x)Na2O-xCuO (x=0, 1, 5 and 10mol.%). Initial characterization was performed using (31)P magic angle spinning nuclear magnetic resonance and attenuated total reflectance-Fourier transform infrared spectroscopy. Increasing CuO content resulted in chemical shifts of the predominant Q(2) NMR peak and of the (POP)as and (PO(-)) Fourier transform infrared absorptions, owing to the higher strength of the POCu bond compared to PONa. Vapour sorption and desorption were gravimetrically measured in PG powders exposed to variable relative humidity (RH). Sorption was negligible below 70% RH and increased exponentially with RH from 70 to 90%, where it exhibited a negative correlation with CuO content. Vapour sorption in 0% and 1% CuO glasses resulted in phosphate chain hydration and hydrolysis, as evidenced by protonated Q(0)(1H) and Q(1)(1H) species. Dissolution rates in deionized water showed a linear correlation (R(2)>0.99) with vapour sorption. Furthermore, cation release rates could be predicted based on dissolution rates and PG composition. The release of orthophosphate and short polyphosphate species corroborates the action of hydrolysis and was correlated with pH changes. In conclusion, the agreement between vapour sorption and routine characterization techniques in water demonstrates the potential of this method for the study of PG aqueous reactions. Copyright © 2014 Acta Materialia Inc. Published by Elsevier Ltd. All rights reserved.

Southern Greenland water vapour isotopic composition at the crossroads of Atlantic and Arctic moisture

NASA Astrophysics Data System (ADS)

Bonne, J. L.; Steen-Larsen, H. C.; Risi, C. M.; Werner, M.; Sodemann, H.; Lacour, J. L.; Fettweis, X.; Cesana, G.; Delmotte, M.; Cattani, O.; Clerbaux, C.; Sveinbjörnsdottir, A. E.; Masson-Delmotte, V.

2014-12-01

Since September 2011, a continuous water vapour isotopic composition monitoring instrument has been remotely operated in Ivittuut (61.21°N, 48.17°W), southern Greenland. Meteorological parameters are monitored and precipitation has been sampled and analysed for isotopic composition, suggesting equilibrium between surface vapour and precipitation. The data depict small summer diurnal variations. δ18O and deuterium excess (d-excess) are generally anti-correlated and show important seasonal variations (with respective amplitudes of 10 and 20 ‰), and large synoptic variations associated to low-pressure systems (typically +5‰ on δ18O and -15‰ on d-excess). The moisture sources, estimated based on Lagrangian back-trajectories, are primarily influenced by the western North Atlantic, and north-eastern American continent. Notable are important seasonal and synoptic shifts of the moisture sources, and sporadic influences of the Arctic or the eastern North Atlantic. Moisture sources variations can be related to changes in water vapour isotopic composition, and the isotopic fingerprints can be attributed to the areas of moisture origins. Isotopic enabled AGCMs nudged to meteorology (LMDZiso, ECHAM5-wiso), despite biases, correctly capture the δ18O changes, but underestimate the d-excess changes. They allow to identify a high correlation between the southern Greenland d-excess and the simulated relative humidity and d-excess in the moisture source region south of Greenland. An extreme high temperature event in July 2012 affecting all Greenland, similar to ice sheet melt events during the medieval periods and one event in 1889 documented by Greenland ice core records, has been analysed regarding water vapour isotopic composition, using remote sensing (IASI) and in situ observations from Bermuda to northern Greenland (NEEM station). Our southern Greenland observations allow to track the water vapour evolution during this event along the moisture transport path

FAST TRACK COMMUNICATION: Metal vapour causes a central minimum in arc temperature in gas-metal arc welding through increased radiative emission

NASA Astrophysics Data System (ADS)

Schnick, M.; Füssel, U.; Hertel, M.; Spille-Kohoff, A.; Murphy, A. B.

2010-01-01

A computational model of the argon arc plasma in gas-metal arc welding (GMAW) that includes the influence of metal vapour from the electrode is presented. The occurrence of a central minimum in the radial distributions of temperature and current density is demonstrated. This is in agreement with some recent measurements of arc temperatures in GMAW, but contradicts other measurements and also the predictions of previous models, which do not take metal vapour into account. It is shown that the central minimum is a consequence of the strong radiative emission from the metal vapour. Other effects of the metal vapour, such as the flux of relatively cold vapour from the electrode and the increased electrical conductivity, are found to be less significant. The different effects of metal vapour in gas-tungsten arc welding and GMAW are explained.

Development of new duplex treatments on 100Cr6steel combining Thermochemical Treatments, Laser Shock Peening and Physical Vapour Deposition

NASA Astrophysics Data System (ADS)

Osés, J.; Fuentes, G. G.; Santo Domingo, S.; Miguel, I.; Gimeno, S.; Carreras, L.; Peyre, P.; Gorny, C.

2017-05-01

100Cr6 steel (AISI 52100) is one of the most used steel grades in the manufacturing of through hardening bearings mainly due to its properties: controlled impurities during steel making process, high hardenability and well known mechanical properties such as wear and fatigue resistance on clean environments. These characteristics play an important role on the performance of a bearing together with the bearing design, loads and environment. However, there is an increasing set of demanding applications where the above mentioned steel does not fulfil the required needs and thus, bearing manufacturers continuously work on the development of technologies to improve the bearing performance. Nowadays thermochemical treatments (TCT), such as carbonitriding are being applied to this steel in order to enhance the performance of such pieces in contaminated environment, where particles can produce defects on the raceway, increasing the onset of defects that eventually lead to premature fail. These treatments induce the formation of carbides and nitrides which are directly related to the enhancement of the wear resistance and also to increasing the amount of Retained Austenite (RA) in the surface which may have a beneficial effect as it delays the crack propagation on subsurface regions, then increasing bearing fatigue life. In this work, different TCTs have been applied to 100Cr6 steel flat samples. Using a tribometer (ball-on-disc configuration) and a grinding machine, surface and in-depth wear resistance measurements have been carried out, obtaining wear resistance profiles that have been correlated with the microstructure, microhardness profiles and RA content. The most promising TCT has been combined either with Laser Shock Peening (LSP) treatments or carbonaceous Physical Vapour Deposition (PVD) coatings with the aim of improving not only the wear resistance but also the CoF of the duplex treated sample. The results obtained on flat samples are promising; the combination

Real-time fluorescence quenching-based detection of nitro-containing explosive vapours: what are the key processes?

PubMed

Shaw, P E; Burn, P L

2017-11-15

The detection of explosives continues to be a pressing global challenge with many potential technologies being pursued by the scientific research community. Luminescence-based detection of explosive vapours with an organic semiconductor has attracted much interest because of its potential for detectors that have high sensitivity, compact form factor, simple operation and low-cost. Despite the abundance of literature on novel sensor materials systems there are relatively few mechanistic studies targeted towards vapour-based sensing. In this Perspective, we will review the progress that has been made in understanding the processes that control the real-time luminescence quenching of thin films by analyte vapours. These are the non-radiative quenching process by which the sensor exciton decays, the analyte-sensor intermolecular binding interaction, and the diffusion process for the analyte vapours in the film. We comment on the contributions of each of these processes towards the sensing response and, in particular, the relative roles of analyte diffusion and exciton diffusion. While the latter has been historically judged to be one of, if not the primary, causes for the high sensitivity of many conjugated polymers to nitrated vapours, recent evidence suggests that long exciton diffusion lengths are unnecessary. The implications of these results on the development of sensor materials for real-time detection are discussed.

Temperature dependence of the crystalline quality of AlN layer grown on sapphire substrates by metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Li, Xiao-Hang; Wei, Yong O.; Wang, Shuo; Xie, Hongen; Kao, Tsung-Ting; Satter, Md. Mahbub; Shen, Shyh-Chiang; Douglas Yoder, P.; Detchprohm, Theeradetch; Dupuis, Russell D.; Fischer, Alec M.; Ponce, Fernando A.

2015-03-01

We studied temperature dependence of crystalline quality of AlN layers at 1050-1250 °C with a fine increment step of around 18 °C. The AlN layers were grown on c-plane sapphire substrates by metalorganic chemical vapor deposition (MOCVD) and characterized by X-ray diffraction (XRD) ω-scans and atomic force microscopy (AFM). At 1050-1068 °C, the templates exhibited poor quality with surface pits and higher XRD (002) and (102) full-width at half-maximum (FWHM) because of insufficient Al atom mobility. At 1086 °C, the surface became smooth suggesting sufficient Al atom mobility. Above 1086 °C, the (102) FWHM and thus edge dislocation density increased with temperatures which may be attributed to the shorter growth mode transition from three-dimension (3D) to two-dimension (2D). Above 1212 °C, surface macro-steps were formed due to the longer diffusion length of Al atoms than the expected step terrace width. The edge dislocation density increased rapidly above 1212 °C, indicating this temperature may be a threshold above which the impact of the transition from 3D to 2D is more significant. The (002) FWHM and thus screw dislocation density were insensitive to the temperature change. This study suggests that high-quality AlN/sapphire templates may be potentially achieved at temperatures as low as 1086 °C which is accessible by most of the III-nitride MOCVD systems.

Solid-state detector system for measuring concentrations of tritiated water vapour and other radioactive gases

NASA Astrophysics Data System (ADS)

Nunes, J. C.; Surette, R. A.; Wood, M. J.

1999-08-01

A detector system was built using a silicon photodiode plus preamplifier and a cesium iodide scintillator plus preamplifier that were commercially available. The potential of the system for measuring concentrations of tritiated water vapour in the presence of other radioactive sources was investigated. For purposes of radiation protection, the sensitivity of the detector system was considered too low for measuring tritiated water vapour concentrations in workplaces such as nuclear power plants. Nevertheless, the spectrometry capability of the system was used successfully to differentiate amongst some radioactive gases in laboratory tests. Although this relatively small system can measure radioactive noble gases as well as tritiated water vapour concentrations, its response to photons remains an issue.

Formation of formic acid and organic peroxides in the ozonolysis of ethene with added water vapour

NASA Astrophysics Data System (ADS)

Horie, Osamu; Neeb, Peter; Limbach, Stefan; Moortgat, Geert K.

1994-07-01

Ozonolysis of C2H4 was carried out in a 580 l glass reaction vessel at 1-5 ppm reactant concentrations, with added water vapour. Under dry conditions ([H2O]0 = 0.5 ppm), HCHO, CO, CO2, (CHO)2O (formic acid anhydride), H2O2, and CH3OOH were identified as the reaction products. Under wet conditions ([H2O]0 = 2 × 104 ppm), HCOOH yields approaching ca. 20% of the converted C2H4, were observed, while no (CHO)2O was formed. Hydroxymethyl hydroperoxide, HOCH2OOH, was observed as the major peroxide, and found to be formed only in the presence of water vapour. Direct reactions of H2O vapour with the excited CH2OO* radicals and with stabilized CH2OO radicals are postulated to explain the formation of HCOOH and HOCH2OOH in the presence of water vapour, respectively.

Water-vapour variability within a convective boundary-layer assessed by large-eddy simulations and IHOP_2002 observations

NASA Astrophysics Data System (ADS)

Couvreux, F.; Guichard, F.; Redelsperger, J. L.; Kiemle, C.; Masson, V.; Lafore, J. P.; Flamant, C.

2005-10-01

This study presents a comprehensive analysis of the variability of water vapour in a growing convective boundary-layer (CBL) over land, highlighting the complex links between advection, convective activity and moisture heterogeneity in the boundary layer. A Large-eddy Simulation (LES) is designed, based on observations, and validated, using an independent data-set collected during the International H2O Project (IHOP 2002) fieldexperiment. Ample information about the moisture distribution in space and time, as well as other important CBL parameters are acquired by mesonet stations, balloon soundings, instruments on-board two aircraft and the DLR airborne water-vapour differential-absorption lidar. Because it can deliver two-dimensional cross-sections at high spatial resolution (140 m horizontal, 200 m vertical), the airborne lidar offers valuable insights of small-scale moisture-variability throughout the CBL. The LES is able to reproduce the development of the CBL in the morning and early afternoon, as assessed by comparisons of simulated mean profiles of key meteorological variables with sounding data. Simulated profiles of the variance of water-vapour mixing-ratio were found to be in good agreement with the lidar-derived counterparts. Finally, probability-density functions of potential temperature, vertical velocity and water-vapour mixing-ratio calculated from the LES show great consistency with those derived from aircraft in situ measurements in the middle of the CBL. Downdraughts entrained from above the CBL are governing the scale of moisture variability. Characteristic length-scales are found to be larger for water-vapour mixing-ratio than for temperature.The observed water-vapour variability exhibits contributions from different scales. The influence of the mesoscale (larger than LES domain size, i.e. 10 km) on the smaller-scale variability is assessed using LES and observations. The small-scale variability of water vapour is found to be important and to be

Simulating ozone dry deposition at a boreal forest with a multi-layer canopy deposition model

NASA Astrophysics Data System (ADS)

Zhou, Putian; Ganzeveld, Laurens; Rannik, Üllar; Zhou, Luxi; Gierens, Rosa; Taipale, Ditte; Mammarella, Ivan; Boy, Michael

2017-01-01

A multi-layer ozone (O3) dry deposition model has been implemented into SOSAA (a model to Simulate the concentrations of Organic vapours, Sulphuric Acid and Aerosols) to improve the representation of O3 concentration and flux within and above the forest canopy in the planetary boundary layer. We aim to predict the O3 uptake by a boreal forest canopy under varying environmental conditions and analyse the influence of different factors on total O3 uptake by the canopy as well as the vertical distribution of deposition sinks inside the canopy. The newly implemented dry deposition model was validated by an extensive comparison of simulated and observed O3 turbulent fluxes and concentration profiles within and above the boreal forest canopy at SMEAR II (Station to Measure Ecosystem-Atmosphere Relations II) in Hyytiälä, Finland, in August 2010. In this model, the fraction of wet surface on vegetation leaves was parametrised according to the ambient relative humidity (RH). Model results showed that when RH was larger than 70 % the O3 uptake onto wet skin contributed ˜ 51 % to the total deposition during nighttime and ˜ 19 % during daytime. The overall contribution of soil uptake was estimated about 36 %. The contribution of sub-canopy deposition below 4.2 m was modelled to be ˜ 38 % of the total O3 deposition during daytime, which was similar to the contribution reported in previous studies. The chemical contribution to O3 removal was evaluated directly in the model simulations. According to the simulated averaged diurnal cycle the net chemical production of O3 compensated up to ˜ 4 % of dry deposition loss from about 06:00 to 15:00 LT. During nighttime, the net chemical loss of O3 further enhanced removal by dry deposition by a maximum ˜ 9 %. Thus the results indicated an overall relatively small contribution of airborne chemical processes to O3 removal at this site.

Preparation and Characterization of TiO2-Based Photocatalysts by Chemical Vapour Deposition

NASA Astrophysics Data System (ADS)

Nacevski, Goran; Marinkovski, Mirko; Tomovska, Radmila; Fajgar, Radek

In the present work, a novel technique for the preparation of TiO2-based photocatalysts modified with SiO2 is presented, using a pulsed ArF laser to induce a chemical vapor deposition process. The irradiated gas mixture was composed of TiCl4/SiCl4 precursors in excess of oxygen. Laser irradiation at 193 nm with a repetition frequency of 10 Hz induced the deposition of thin nano-sized mixed oxide films. In order to improve the photocatalytic activity of the catalysts and to expand the activity from the UV to the visible part of the spectrum, doping of the catalysts with chromium oxides was performed. For that aim, the same technique of catalyst preparation was used, irradiating the same gas mixture with the addition of chromyl chloride as Cr precursor. The thin films prepared were annealed up to 500°C in order to remove crystal defects, which could be responsible for poor photocatalytic activity. The dependence of structure and properties on reaction process and irradiation conditions (laser energy and fluence, precursors pressure) were examined. The main aim was to find the best conditions for the production of highly photoactive catalysts and to decrease deactivation processes during the photo-oxidation. The composition, structure and morphology of the oxide catalysts prepared were studied by various spectroscopies, electron microscopy and diffraction techniques.

Pressure-temperature-fluid constraints for the Emmaville-Torrington emerald deposit, New South Wales, Australia: Fluid inclusion and stable isotope studies

NASA Astrophysics Data System (ADS)

Loughrey, Lara; Marshall, Dan; Jones, Peter; Millsteed, Paul; Main, Arthur

2012-06-01

The Emmaville-Torrington emeralds were first discovered in 1890 in quartz veins hosted within a Permian metasedimentary sequence, consisting of meta-siltstones, slates and quartzites intruded by pegmatite and aplite veins from the Moule Granite. The emerald deposit genesis is consistent with a typical granite-related emerald vein system. Emeralds from these veins display colour zonation alternating between emerald and clear beryl. Two fluid inclusion types are identified: three-phase (brine+vapour+halite) and two-phase (vapour+liquid) fluid inclusions. Fluid inclusion studies indicate the emeralds were precipitated from saline fluids ranging from approximately 33 mass percent NaCl equivalent. Formational pressures and temperatures of 350 to 400 °C and approximately 150 to 250 bars were derived from fluid inclusion and petrographic studies that also indicate emerald and beryl precipitation respectively from the liquid and vapour portions of a two-phase (boiling) system. The distinct colour zonations observed in the emerald from these deposits is the first recorded emerald locality which shows evidence of colour variation as a function of boiling. The primary three-phase and primary two-phase FITs are consistent with alternating chromium-rich `striped' colour banding. Alternating emerald zones with colourless beryl are due to chromium and vanadium partitioning in the liquid portion of the boiling system. The chemical variations observed at Emmaville-Torrington are similar to other colour zoned emeralds from other localities worldwide likely precipitated from a boiling system as well.

Dichlorvos vapour disinsection of aircraft

PubMed Central

Jensen, Jens A.; Flury, Vincent P.; Schoof, Herbert F.

1965-01-01

The authors describe the testing of an automatic aircraft disinsection system permanently installed on a commercial DC-6B passenger aircraft. An air-compressor forces ambient cabin air, partially saturated with dichlorvos vapour at a set concentration, through the cabin, cockpit and baggage compartments of the aircraft for 30 minutes. Insecticide concentrations and insect mortality were observed in post-overhaul check flights, and insect mortality and passenger reactions were observed on scheduled flights between Miami, Florida, and Nassau, Bahamas. The results showed satisfactory biological efficiency. The passengers were unaware of the disinsection process and showed no signs of discomfort. ImagesFIG. 1FIG. 2FIG. 3 PMID:14310904

Oscillatory vapour shielding of liquid metal walls in nuclear fusion devices.

PubMed

van Eden, G G; Kvon, V; van de Sanden, M C M; Morgan, T W

2017-08-04

Providing an efficacious plasma facing surface between the extreme plasma heat exhaust and the structural materials of nuclear fusion devices is a major challenge on the road to electricity production by fusion power plants. The performance of solid plasma facing surfaces may become critically reduced over time due to progressing damage accumulation. Liquid metals, however, are now gaining interest in solving the challenge of extreme heat flux hitting the reactor walls. A key advantage of liquid metals is the use of vapour shielding to reduce the plasma exhaust. Here we demonstrate that this phenomenon is oscillatory by nature. The dynamics of a Sn vapour cloud are investigated by exposing liquid Sn targets to H and He plasmas at heat fluxes greater than 5 MW m -2 . The observations indicate the presence of a dynamic equilibrium between the plasma and liquid target ruled by recombinatory processes in the plasma, leading to an approximately stable surface temperature.Vapour shielding is one of the interesting mechanisms for reducing the heat load to plasma facing components in fusion reactors. Here the authors report on the observation of a dynamic equilibrium between the plasma and the divertor liquid Sn surface leading to an overall stable surface temperature.

Oxidation of volatile organic vapours in air by solid potassium permanganate.

PubMed

Mahmoodlu, Mojtaba Ghareh; Hartog, Niels; Majid Hassanizadeh, S; Raoof, Amir

2013-06-01

Volatile organic compounds (VOCs) may frequently contaminate groundwater and pose threat to human health when migrating into the unsaturated soil zone and upward to the indoor air. The kinetic of chemical oxidation has been investigated widely for dissolved VOCs in the saturated zone. But, so far there have been few studies on the use of in situ chemical oxidation (ISCO) of vapour phase contaminants. In this study, batch experiments were carried out to evaluate the oxidation of trichloroethylene (TCE), ethanol, and toluene vapours by solid potassium permanganate. Results revealed that solid potassium permanganate is able to transform the vapour of these compounds into harmless oxidation products. The degradation rates for TCE and ethanol were higher than for toluene. The degradation process was modelled using a kinetic model, linear in the gas concentration of VOC [ML(-3)] and relative surface area of potassium permanganate grains (surface area of potassium permanganate divided by gas volume) [L(-1)]. The second-order reaction rate constants for TCE, ethanol, and toluene were found to be equal to 2.0×10(-6) cm s(-1), 1.7×10(-7) cm s(-1), and 7.0×10(-8) cm s(-1), respectively. Copyright © 2013 Elsevier Ltd. All rights reserved.

Vapour pressure and standard enthalpy of sublimation of KBF 4 by a TG based transpiration technique

NASA Astrophysics Data System (ADS)

Pankajavalli, R.; Ananthasivan, K.; Anthonysamy, S.; Vasudeva Rao, P. R.

2005-10-01

A horizontal thermobalance was adapted as a transpiration apparatus for the measurement of the vapour pressure of KBF4 (s). Attainment of equilibrium was ascertained by the invariance of the measured values of the vapour pressures over a range of flows under isothermal conditions. Measured values of the vapour pressures could be represented by the least-squares expressions: log (p/Pa) = 8.16(±0.01) - 4892(±248)/T(K)(538-560 K), log (p/Pa) = 6.85(±0.06) - 4158(±240)/T(K) (576-660 K), which correspond to the equilibria of orthorhombic and cubic KBF4 vapours, respectively. From these expressions the temperature of transformation of the orthorhombic to the cubic phase was identified to be 561 K. From the slopes of the above equations, the enthalpies of sublimation of the orthorhombic and cubic phases were found to be (93.7 ± 4.7) and (79.6 ± 4.6) kJ mol-1, respectively. These values differ by 14.1 kJ mol-1 which could be ascribed to the enthalpy of the orthorhombic to cubic phase transition of KBF4. Third-law analysis of the vapour pressure data yielded a value of (104.6 ± 1.0) kJ mol-1 for Δ Hsubo of KBF4 (s) at 298.15 K.

Characterization of an Mg-implanted GaN p-i-n Diode

DTIC Science & Technology

2016-03-31

unintentionally doped GaN layer was grown by metal organic chemical vapor deposition (MOCVD) on a n+ Ga -face c-oriented GaN substrate. The as-grown MOCVD film...their proper lattice sites. In the case of Mg implanted GaN , the Mg must replace Ga to result in p-type material. In many other semiconductor...Characterization of an Mg-implanted GaN p-i-n Diode Travis J. Anderson, Jordan D. Greenlee, Boris N. Feigelson, Karl D. Hobart, and Francis J

Combustion dynamics of low vapour pressure nanofuel droplets

NASA Astrophysics Data System (ADS)

Pandey, Khushboo; Chattopadhyay, Kamanio; Basu, Saptarshi

2017-07-01

Multiscale combustion dynamics, shape oscillations, secondary atomization, and precipitate formation have been elucidated for low vapour pressure nanofuel [n-dodecane seeded with alumina nanoparticles (NPs)] droplets. Dilute nanoparticle loading rates (0.1%-1%) have been considered. Contrary to our previous studies of ethanol-water blend (high vapour pressure fuel), pure dodecane droplets do not exhibit internal boiling after ignition. However, variation in surface tension due to temperature causes shape deformations for pure dodecane droplets. In the case of nanofuels, intense heat release from the enveloping flame leads to the formation of micron-size aggregates (of alumina NPS) which serve as nucleation sites promoting heterogeneous boiling. Three boiling regimes (A, B, and C) have been identified with varying bubble dynamics. We have deciphered key mechanisms responsible for the growth, transport, and rupture of the bubbles. Bubble rupture causes ejections of liquid droplets termed as secondary atomization. Ejection of small bubbles (mode 1) resembles the classical vapour bubble collapse mechanism near a flat free surface. However, large bubbles induce severe shape deformations as well as bulk oscillations. Rupture of large bubbles results in high speed liquid jet formation which undergoes Rayleigh-Plateau tip break-up. Both modes contribute towards direct fuel transfer from the droplet surface to flame envelope bypassing diffusion limitations. Combustion lifetime of nanofuel droplets consequently has two stages: stage I (where bubble dynamics are dominant) and stage II (formation of gelatinous mass due to continuous fuel depletion; NP agglomeration). In the present work, variation of flame dynamics and spatio-temporal heat release (HR) have been analysed using high speed OH* chemiluminescence imaging. Fluctuations in droplet shape and flame heat release are found to be well correlated. Droplet flame is bifurcated in two zones (I and II). Flame response is

Highly efficient solar vapour generation via hierarchically nanostructured gels.

PubMed

Zhao, Fei; Zhou, Xingyi; Shi, Ye; Qian, Xin; Alexander, Megan; Zhao, Xinpeng; Mendez, Samantha; Yang, Ronggui; Qu, Liangti; Yu, Guihua

2018-04-02

Solar vapour generation is an efficient way of harvesting solar energy for the purification of polluted or saline water. However, water evaporation suffers from either inefficient utilization of solar energy or relies on complex and expensive light-concentration accessories. Here, we demonstrate a hierarchically nanostructured gel (HNG) based on polyvinyl alcohol (PVA) and polypyrrole (PPy) that serves as an independent solar vapour generator. The converted energy can be utilized in situ to power the vaporization of water contained in the molecular meshes of the PVA network, where water evaporation is facilitated by the skeleton of the hydrogel. A floating HNG sample evaporated water with a record high rate of 3.2 kg m -2  h -1 via 94% solar energy from 1 sun irradiation, and 18-23 litres of water per square metre of HNG was delivered daily when purifying brine water. These values were achievable due to the reduced latent heat of water evaporation in the molecular mesh under natural sunlight.

Highly efficient solar vapour generation via hierarchically nanostructured gels

NASA Astrophysics Data System (ADS)

Zhao, Fei; Zhou, Xingyi; Shi, Ye; Qian, Xin; Alexander, Megan; Zhao, Xinpeng; Mendez, Samantha; Yang, Ronggui; Qu, Liangti; Yu, Guihua

2018-06-01

Solar vapour generation is an efficient way of harvesting solar energy for the purification of polluted or saline water. However, water evaporation suffers from either inefficient utilization of solar energy or relies on complex and expensive light-concentration accessories. Here, we demonstrate a hierarchically nanostructured gel (HNG) based on polyvinyl alcohol (PVA) and polypyrrole (PPy) that serves as an independent solar vapour generator. The converted energy can be utilized in situ to power the vaporization of water contained in the molecular meshes of the PVA network, where water evaporation is facilitated by the skeleton of the hydrogel. A floating HNG sample evaporated water with a record high rate of 3.2 kg m-2 h-1 via 94% solar energy from 1 sun irradiation, and 18-23 litres of water per square metre of HNG was delivered daily when purifying brine water. These values were achievable due to the reduced latent heat of water evaporation in the molecular mesh under natural sunlight.

Preparation and characterization of epitaxial MgO thin film by atmospheric-pressure metalorganic chemical vapor deposition

NASA Astrophysics Data System (ADS)

Zeng, J. M.; Wang, H.; Shang, S. X.; Wang, Z.; Wang, M.

1996-12-01

Magnesium oxide (MgO) thin films have been prepared on Si(100), {SiO2(100) }/{Si} and {Pt(111) }/{Si} substrates by atmospheric-pressure metalorganic chemical vapor deposition (AP-MOCVD) for the first time. The relationship between the temperature of substrates ( Ts) and crystallographic orientations was also investigated. Magnesium acetylacetonate [Mg(CH 2COCH 2COCH 3) 2] was used as the metalorganic source. The relatively low temperature of substrates is about 480°C and the MgO thin films obtained were uniform, dense and well-ordered single crystal. X-ray diffraction experiments provided evidence that the MgO thin films on Si(100) ( Ts ≈ 400-680°C), {SiO2}/{Si} and {Pt}/{Si} were fully textured with (100) orientation. The deliquescent character of MgO thin films was also studied.

A review of vapour lock issues during motor gasoline or automotive gasoline usage in piston engine aircraft

NASA Astrophysics Data System (ADS)

Thanikasalam, K.; Rahmat, M.; Fahmi, A. G. Mohammad; Zulkifli, A. M.; Shawal, N. Noor; Ilanchelvi, K.; Ananth, M.; Elayarasan, R.

2018-05-01

Since there is a developing practice of utilizing automotive fuels as flight fuel, there are higher chances of dangerous scenarios, particularly in the operation of piston aircraft engines. The use of motor vehicle gas (MOGAS) or aviation gas (AVGAS) in the operation of aviation piston engine increases the risk of vapour locking. A statistical examination of European aviation industry indicates that around 20,000 aircraft are affected either specifically or conceivably by the different negative impacts of gasoline blended with ethanol. Particularly, for most contemporary carburettor engines, there are risks associated with ethanol-admixed fuels that have potential to upset engine operation. The danger of vapour locking, which is the generation of gas bubbles inside the fuel system causing an impairment of fuel movement in the engine, is well documented particularly by studies on aircraft using MOGAS. Contrasted with AVGAS, MOGAS is inclined to demonstrate this phenomenon. Vapour lock is perhaps the leading serious problem that ought to be addressed if MOGAS is to be used as a substitute for AVGAS. Vapour lock problem is critical because it causes malfunctions to aircraft engines. Thus, an understanding of vapour handling ability of small aircraft is essential to establish safe operating confines at existing fuel temperature and pressures.

Vapour-liquid interfacial properties of square-well chains from density functional theory and Monte Carlo simulation.

PubMed

Martínez-Ruiz, Francisco José; Blas, Felipe J; Moreno-Ventas Bravo, A Ignacio; Míguez, José Manuel; MacDowell, Luis G

2017-05-17

The statistical associating fluid theory for attractive potentials of variable range (SAFT-VR) density functional theory (DFT) developed by [Gloor et al., J. Chem. Phys., 2004, 121, 12740-12759] is used to predict the interfacial behaviour of molecules modelled as fully-flexible square-well chains formed from tangentially-bonded monomers of diameter σ and potential range λ = 1.5σ. Four different model systems, comprising 4, 8, 12, and 16 monomers per molecule, are considered. In addition to that, we also compute a number of interfacial properties of molecular chains from direct simulation of the vapour-liquid interface. The simulations are performed in the canonical ensemble, and the vapour-liquid interfacial tension is evaluated using the wandering interface (WIM) method, a technique based on the thermodynamic definition of surface tension. Apart from surface tension, we also obtain density profiles, coexistence densities, vapour pressures, and critical temperature and density, paying particular attention to the effect of the chain length on these properties. According to our results, the main effect of increasing the chain length (at fixed temperature) is to sharpen the vapour-liquid interface and to increase the width of the biphasic coexistence region. As a result, the interfacial thickness decreases and the surface tension increases as the molecular chains get longer. The interfacial thickness and surface tension appear to exhibit an asymptotic limiting behaviour for long chains. A similar behaviour is also observed for the coexistence densities and critical properties. Agreement between theory and simulation results indicates that SAFT-VR DFT is only able to predict qualitatively the interfacial properties of the model. Our results are also compared with simulation data taken from the literature, including the vapour-liquid coexistence densities, vapour pressures, and surface tension.

UTLS water vapour from SCIAMACHY limb measurementsV3.01 (2002-2012).

PubMed

Weigel, K; Rozanov, A; Azam, F; Bramstedt, K; Damadeo, R; Eichmann, K-U; Gebhardt, C; Hurst, D; Kraemer, M; Lossow, S; Read, W; Spelten, N; Stiller, G P; Walker, K A; Weber, M; Bovensmann, H; Burrows, J P

2016-01-01

The SCanning Imaging Absorption spectroMeter for Atmospheric CHartographY (SCIAMACHY) aboard the Envisat satellite provided measurements from August 2002 until April 2012. SCIAMACHY measured the scattered or direct sunlight using different observation geometries. The limb viewing geometry allows the retrieval of water vapour at about 10-25 km height from the near-infrared spectral range (1353-1410 nm). These data cover the upper troposphere and lower stratosphere (UTLS), a region in the atmosphere which is of special interest for a variety of dynamical and chemical processes as well as for the radiative forcing. Here, the latest data version of water vapour (V3.01) from SCIAMACHY limb measurements is presented and validated by comparisons with data sets from other satellite and in situ measurements. Considering retrieval tests and the results of these comparisons, the V3.01 data are reliable from about 11 to 23 km and the best results are found in the middle of the profiles between about 14 and 20 km. Above 20 km in the extra tropics V3.01 is drier than all other data sets. Additionally, for altitudes above about 19 km, the vertical resolution of the retrieved profile is not sufficient to resolve signals with a short vertical structure like the tape recorder. Below 14 km, SCIAMACHY water vapour V3.01 is wetter than most collocated data sets, but the high variability of water vapour in the troposphere complicates the comparison. For 14-20 km height, the expected errors from the retrieval and simulations and the mean differences to collocated data sets are usually smaller than 10 % when the resolution of the SCIAMACHY data is taken into account. In general, the temporal changes agree well with collocated data sets except for the Northern Hemisphere extratropical stratosphere, where larger differences are observed. This indicates a possible drift in V3.01 most probably caused by the incomplete treatment of volcanic aerosols in the retrieval. In all other regions a

Vapour loss (``boiling'') as a mechanism for fluid evolution in metamorphic rocks

NASA Astrophysics Data System (ADS)

Trommsdorff, Volkmar; Skippen, George

1986-11-01

The calculation of fluid evolution paths during reaction progress is considered for multicomponent systems and the results applied to the ternary system, CO2-H2O-NaCl. Fluid evolution paths are considered for systems in which a CO2-rich phase of lesser density (vapour) is preferentially removed from the system leaving behind a saline aqueous phase (liquid). Such “boiling” leads to enrichment of the residual aqueous phase in dissolved components and, for certain reaction stoichiometries, to eventual saturation of the fluids in salt components. Distinctive textures, particularly radiating growths of prismatic minerals such as tremolite or diopside, are associated with saline fluid inclusions and solid syngenetic salt inclusions at a number of field localities. The most thoroughly studied of these localities is Campolungo, Switzerland, where metasomatic rocks have developed in association with fractures and veins at 500° C and 2,000 bars of pressure. The petrography of these rocks suggests that fluid phase separation into liquid and vapour has been an important process during metasomatism. Fracture systems with fluids at pressure less than lithostatic may facilitate the loss of the less dense vapour phase to conditions of the amphibolite facies.

Zinc oxide nanorod based photonic devices: recent progress in growth, light emitting diodes and lasers.

PubMed

Willander, M; Nur, O; Zhao, Q X; Yang, L L; Lorenz, M; Cao, B Q; Zúñiga Pérez, J; Czekalla, C; Zimmermann, G; Grundmann, M; Bakin, A; Behrends, A; Al-Suleiman, M; El-Shaer, A; Che Mofor, A; Postels, B; Waag, A; Boukos, N; Travlos, A; Kwack, H S; Guinard, J; Le Si Dang, D

2009-08-19

Zinc oxide (ZnO), with its excellent luminescent properties and the ease of growth of its nanostructures, holds promise for the development of photonic devices. The recent advances in growth of ZnO nanorods are discussed. Results from both low temperature and high temperature growth approaches are presented. The techniques which are presented include metal-organic chemical vapour deposition (MOCVD), vapour phase epitaxy (VPE), pulse laser deposition (PLD), vapour-liquid-solid (VLS), aqueous chemical growth (ACG) and finally the electrodeposition technique as an example of a selective growth approach. Results from structural as well as optical properties of a variety of ZnO nanorods are shown and analysed using different techniques, including high resolution transmission electron microscopy (HR-TEM), scanning electron microscopy (SEM), photoluminescence (PL) and cathodoluminescence (CL), for both room temperature and for low temperature performance. These results indicate that the grown ZnO nanorods possess reproducible and interesting optical properties. Results on obtaining p-type doping in ZnO micro- and nanorods are also demonstrated using PLD. Three independent indications were found for p-type conducting, phosphorus-doped ZnO nanorods: first, acceptor-related CL peaks, second, opposite transfer characteristics of back-gate field effect transistors using undoped and phosphorus doped wire channels, and finally, rectifying I-V characteristics of ZnO:P nanowire/ZnO:Ga p-n junctions. Then light emitting diodes (LEDs) based on n-ZnO nanorods combined with different technologies (hybrid technologies) are suggested and the recent electrical, as well as electro-optical, characteristics of these LEDs are shown and discussed. The hybrid LEDs reviewed and discussed here are mainly presented for two groups: those based on n-ZnO nanorods and p-type crystalline substrates, and those based on n-ZnO nanorods and p-type amorphous substrates. Promising electroluminescence

Reliable determination of oxygen and hydrogen isotope ratios in atmospheric water vapour adsorbed on 3A molecular sieve.

PubMed

Han, Liang-Feng; Gröning, Manfred; Aggarwal, Pradeep; Helliker, Brent R

2006-01-01

The isotope ratio of atmospheric water vapour is determined by wide-ranging feedback effects from the isotope ratio of water in biological water pools, soil surface horizons, open water bodies and precipitation. Accurate determination of atmospheric water vapour isotope ratios is important for a broad range of research areas from leaf-scale to global-scale isotope studies. In spite of the importance of stable isotopic measurements of atmospheric water vapour, there is a paucity of published data available, largely because of the requirement for liquid nitrogen or dry ice for quantitative trapping of water vapour. We report results from a non-cryogenic method for quantitatively trapping atmospheric water vapour using 3A molecular sieve, although water is removed from the column using standard cryogenic methods. The molecular sieve column was conditioned with water of a known isotope ratio to 'set' the background signature of the molecular sieve. Two separate prototypes were developed, one for large collection volumes (3 mL) and one for small collection volumes (90 microL). Atmospheric water vapour was adsorbed to the column by pulling air through the column for several days to reach the desired final volume. Water was recovered from the column by baking at 250 degrees C in a dry helium or nitrogen air stream and cryogenically trapped. For the large-volume apparatus, the recovered water differed from water that was simultaneously trapped by liquid nitrogen (the experimental control) by 2.6 per thousand with a standard deviation (SD) of 1.5 per thousand for delta(2)H and by 0.3 per thousand with a SD of 0.2 per thousand for delta(18)O. Water-vapour recovery was not satisfactory for the small volume apparatus. Copyright (c) 2006 John Wiley & Sons, Ltd.

A novel barium strontium titanate/nickel/titanium nitride/silicon structure for gigabit-scale DRAM capacitors

NASA Astrophysics Data System (ADS)

Ritums, Dwight Lenards

A materials system has been developed for advanced oxide high permittivity capacitors for use in Dynamic Random Access Memory (DRAM) applications. A capacitor test structure has been fabricated, demonstrating the integration of this materials system onto Si. It is a 3-D stacked electrode structure which uses the high-K dielectric material Ba1- xSrxTiO 3 (BST) and a novel Ni/TiN bottom electrode system. The structure was grown using pulsed laser deposition (PLD), photo-assisted metal-organic chemical vapor deposition (PhA-MOCVD), and electron beam deposition, and resulted in thin film capacitors with dielectric constants over 500. Other advanced oxides, principally SrVO3, were also investigated for use as electrode materials. The fabricated test structure is 3 μgm wide and 1 μm thick. RIE was used to generate the 3-D structure, and an etch gas recipe was developed to pattern the 3-D electrode structure onto the TiN. The Ni was deposited by electron beam deposition, and the BST was grown by PLD and PhA-MOCVD. Conformal coating of the electrode by the BST was achieved. The film structure was analyzed with XRD, SEM, EDS, XPS, AES, and AFM, and the electronic properties of the devices were characterized. Permittivites of up to 500 were seen in the PLD-grown films, and values up to 700 were seen in the MOCVD- deposited films. The proof of concept of a high permittivity material directly integrated onto Si has been demonstrated for this capacitor materials system. With further lithographic developments, this system can be applied toward gigabit device fabrication.

Influence of deposition conditions on electrical and mechanical properties of Sm2O3-doped CeO2 thin films prepared by EB-PVD (+IBAD) methods. Part 1: Effective relative permittivity

NASA Astrophysics Data System (ADS)

Hartmanová, Mária; Nádaždy, Vojtech; Kundracik, František; Mansilla, Catina

2013-03-01

Study is devoted to the effective relative permittivity ɛr of CeO2 + x. Sm2O3 thin films prepared by electron-beam physical vapour deposition and ionic beam-assisted deposition methods; ɛr was investigated by three independent ways from the bulk parallel capacitance Cp, impedance capacitance Cimp, and accumulation capacitance Cacc in dependence on the deposition conditions (deposition temperature, dopant amount x and Ar+ ion bombardment during the film deposition) used. Investigations were performed using impedance spectroscopy, capacitance-voltage and current-voltage characteristics as well as deep level transient spectroscopy. Results obtained are described and discussed.

THE INTERACTION OF VAPOUR PHASE ORGANIC COMPOUNDS WITH INDOOR SINKS

EPA Science Inventory

The interaction of indoor air pollutants with interior surfaces (i.e., sinks) is a well known, but poorly understood, phenomenon. Studies have shown that re-emissions of adsorbed organic vapours can contribute to elevated concentrations of organics in indoor environments. Researc...

Study of Laser Created Metal Vapour Plasmas.

DTIC Science & Technology

1981-09-01

ance saturation could lead to extensive ground Zcvei burnout of certain kinds of atoms or ions and that this could lead to the creation of a ground...level FORM DD I JAN ", 1473 UNCLASSIFIED SECURITY CLASSIFICATION OF THIS PACE ’l hen Dota Fnt ’UNCLASSIFIFD SS ~eUItTY CLASSIFICATION OF THIS PAqE(W"Sef...vapours. Preliminary calculations have suggested that laser resonance saturation could lead to extensive ground level burnout of certain kinds of

Transversely diode-pumped alkali metal vapour laser

DOE Office of Scientific and Technical Information (OSTI.GOV)

Parkhomenko, A I; Shalagin, A M

2015-09-30

We have studied theoretically the operation of a transversely diode-pumped alkali metal vapour laser. For the case of high-intensity laser radiation, we have obtained an analytical solution to a complex system of differential equations describing the laser. This solution allows one to exhaustively determine all the energy characteristics of the laser and to find optimal parameters of the working medium and pump radiation (temperature, buffer gas pressure, and intensity and width of the pump spectrum). (lasers)

Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition

NASA Astrophysics Data System (ADS)

Mon-Pérez, E.; Salazar, J.; Ramos, E.; Santoyo Salazar, J.; López Suárez, A.; Dutt, A.; Santana, G.; Marel Monroy, B.

2016-11-01

Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH2Cl2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH3/SiH2Cl2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

Electrophoretically deposited multiwalled carbon nanotube based amperometric genosensor for E.coli detection

NASA Astrophysics Data System (ADS)

Bhardwaj, Hema; Solanki, Shipra; Sumana, Gajjala

2016-04-01

This work reports on a sensitive and selective genosensor fabrication method for Escherichia coli (E.coli) detection. The functionalized multiwalled carbon nanotubes (MWCNT) synthesized via chemical vapour deposition have been deposited electrophoretically onto indium tin oxide coated glass surface and have been utilized as matrices for the covalent immobilization of E.coli specific probe oligonucleotide that was identified from the 16s rRNA coding region of the E.coli genome. This fabricated functionalized MWCNT based platform sought to provide improved fundamental characteristics to electrode interface in terms of electro-active surface area and diffusion coefficient. Electrochemical cyclic voltammetry revealed that this genosensor exhibits a linear response to complementary DNA in the concentration range of 10-7 to 10-12 M with a detection limit of 1×10-12 M.

Infrared Laser Optoacoustic Detection Of Gases And Vapours

NASA Astrophysics Data System (ADS)

Johnson, S. A.; Cummins, P. G.; Bone, S. A.; Davies, P. B.

1988-10-01

Mid-infrared laser optoacoustic spectroscopy has been used to detect a variety of gases and vapours. Performance was calibrated using the signal from a known concentration of ethene, and then the method applied to the perfume alcohol geraniol. Detection limits were found to be 1 ppb for ethene and 70 ppb for geraniol on their strongest absorption lines for a few seconds measurement time.

The effect of ethanol vapour exposure on atrial and ventricular walls of chick embryos.

PubMed

Kamran, Kiran; Khan, Muhammad Yunus; Minhas, Liaqat Ali

2016-10-01

To study the effects of ethanol vapour exposure on atrial and ventricular walls of heart in chick embryo. The study design was experimental, conducted at Islamabad Centre of College of Physicians and Surgeons, Pakistan. One hundred and eighty chicken eggs were divided into two groups, experimental and control, of 90 eggs each. Each group was subdivided into three subgroups of 30 eggs each based on the day of sacrifice. Experimental group was exposed to ethanol vapours and then compared with age matched controls. The thickness of atrial and ventricular walls along with lengths of valvular cusps increased in hearts of day 7 and day 10 chick embryos in experimental group. There was thinning of walls and decreased length of valvular cusps in hearts of experimental chicks on hatching as compared to age matched controls. Ethanol vapour exposure during development causes cardiac and septal wall thickening during initial days of development followed by cardiac and septal wall thinning which is a classical picture of alcohol induced cardiomyopathies.

Final Report: Vapor Transport Deposition for Thin Film III-V Photovoltaics

DOE Office of Scientific and Technical Information (OSTI.GOV)

Boettcher, Shannon; Greenaway, Ann; Boucher, Jason

2016-02-10

Silicon, the dominant photovoltaic (PV) technology, is reaching its fundamental performance limits as a single absorber/junction technology. Higher efficiency devices are needed to reduce cost further because the balance of systems account for about two-thirds of the overall cost of the solar electricity. III-V semiconductors such as GaAs are used to make the highest-efficiency photovoltaic devices, but the costs of manufacture are much too high for non-concentrated terrestrial applications. The cost of III-V’s is driven by two factors: (1) metal-organic chemical vapor deposition (MOCVD), the dominant growth technology, employs expensive, toxic and pyrophoric gas-phase precursors, and (2) the growth substratesmore » conventionally required for high-performance devices are monocrystalline III-V wafers. The primary goal of this project was to show that close-spaced vapor transport (CSVT), using water vapor as a transport agent, is a scalable deposition technology for growing low-cost epitaxial III-V photovoltaic devices. The secondary goal was to integrate those devices on Si substrates for high-efficiency tandem applications using interface nanopatterning to address the lattice mismatch. In the first task, we developed a CSVT process that used only safe solid-source powder precursors to grow epitaxial GaAs with controlled n and p doping and mobilities/lifetimes similar to that obtainable via MOCVD. Using photoelectrochemical characterization, we showed that the best material had near unity internal quantum efficiency for carrier collection and minority carrier diffusions lengths in of ~ 8 μm, suitable for PV devices with >25% efficiency. In the second task we developed the first pn junction photovoltaics using CSVT and showed unpassivated structures with open circuit photovoltages > 915 mV and internal quantum efficiencies >0.9. We also characterized morphological and electrical defects and identified routes to reduce those defects. In task three we grew

Thermally decarboxylated sodium bicarbonate: Interactions with water vapour, calorimetric study

PubMed Central

Volkova, Natalia; Hansson, Henri; Ljunggren, Lennart

2012-01-01

Isothermal titration calorimetry (ITC) was used to study interactions between water vapour and the surface of thermally converted sodium bicarbonate (NaHCO3). The decarboxylation degree of the samples was varied from 3% to 35% and the humidity range was 54–100%. The obtained enthalpy values were all exothermic and showed a positive linear correlation with decarboxylation degrees for each humidity studied. The critical humidity, 75% (RHo), was determined as the inflection point on a plot of the mean−ΔH kJ/mole Na2CO3 against RH. Humidities above the critical humidity lead to complete surface dissolution. The water uptake (m) was determined after each calorimetric experiment, complementing the enthalpy data. A mechanism of water vapour interaction with decarboxylated samples, including the formation of trona and Wegscheider’s salt on the bicarbonate surface is proposed for humidities below RHo. PMID:29403816

Strain and structure heterogeneity in MoS 2 atomic layers grown by chemical vapour deposition

DOE PAGES

Liu, Zheng; Amani, Matin; Najmaei, Sina; ...

2014-11-18

Monolayer molybdenum disulfide (MoS 2) has attracted tremendous attention due to its promising applications in high-performance field-effect transistors, phototransistors, spintronic devices, and nonlinear optics. The enhanced photoluminescence effect in monolayer MoS 2 was discovered and, as a strong tool, was employed for strain and defect analysis in MoS 2. Recently, large-size monolayer MoS 2 has been produced by chemical vapor deposition but has not yet been fully explored. Here we systematically characterize chemical vapor deposition grown MoS 2 by PL spectroscopy and mapping, and demonstrate non-uniform strain in single-crystalline monolayer MoS 2 and strain-induced band gap engineering. We also evaluatemore » the effective strain transferred from polymer substrates to MoS 2 by three-dimensional finite element analysis. In addition, our work demonstrates that PL mapping can be used as a non-contact approach for quick identification of grain boundaries in MoS 2.« less

Measurement of the densities of Cu and Ag vapours in a low-voltage switch using the hook method

NASA Astrophysics Data System (ADS)

Lins, Günter

2012-05-01

In a research model of a low-voltage circuit breaker with fixed contacts and windows for optical access, arcs powered by either a high-current transformer or a capacitor bank were initiated by the explosion of tungsten wires. Air at atmospheric pressure was the switching medium. The number densities of neutral silver and copper vapours from contacts and arc runners were measured simultaneously by the hook method using a Mach-Zehnder interferometer combined with a 1 m spectrograph and a gated intensified CCD camera. When an arc current was flowing, a substantial fraction of the metal vapour was ionized, and thus not amenable to a density measurement with the technique chosen. To nevertheless obtain approximate density values, the arc current was forced to zero within 8 to 10 µs at a preset time and measurements were carried out 100 µs after extinction of the arc. At that time the metal vapour was expected to have recombined to a large extent but not yet diffused to the walls in significant amounts. Depending on the current amplitude reached within the arc duration the arc remained anchored to the silver contacts or commutated to the copper arc runners. At a maximum current amplitude of 650 A Ag vapour densities of the order of 1022 m-3 were observed near the anode outweighing the Cu vapour density by a factor of 20. When at 1600 A the arc commutated to the arc runners a Cu vapour density of 8 × 1021 m-3 was reached while the Ag density remained limited to 2 × 1021 m-3.

Capillary microextraction: A new method for sampling methamphetamine vapour.

PubMed

Nair, M V; Miskelly, G M

2016-11-01

Clandestine laboratories pose a serious health risk to first responders, investigators, decontamination companies, and the public who may be inadvertently exposed to methamphetamine and other chemicals used in its manufacture. Therefore there is an urgent need for reliable methods to detect and measure methamphetamine at such sites. The most common method for determining methamphetamine contamination at former clandestine laboratory sites is selected surface wipe sampling, followed by analysis with gas chromatography-mass spectrometry (GC-MS). We are investigating the use of sampling for methamphetamine vapour to complement such wipe sampling. In this study, we report the use of capillary microextraction (CME) devices for sampling airborne methamphetamine, and compare their sampling efficiency with a previously reported dynamic SPME method. The CME devices consisted of PDMS-coated glass filter strips inside a glass tube. The devices were used to dynamically sample methamphetamine vapour in the range of 0.42-4.2μgm -3 , generated by a custom-built vapour dosing system, for 1-15min, and methamphetamine was analysed using a GC-MS fitted with a ChromatoProbe thermal desorption unit. The devices showed good reproducibility (RSD<15%), and a curvilinear pre-equilibrium relationship between sampling times and peak area, which can be utilised for calibration. Under identical sampling conditions, the CME devices were approximately 30 times more sensitive than the dynamic SPME method. The CME devices could be stored for up to 3days after sampling prior to analysis. Consecutive sampling of methamphetamine and its isotopic substitute, d-9 methamphetamine showed no competitive displacement. This suggests that CME devices, pre-loaded with an internal standard, could be a feasible method for sampling airborne methamphetamine at former clandestine laboratories. Copyright © 2016 Elsevier Ireland Ltd. All rights reserved.

Vapour growth of argyrodite-type ionic conductors Cu 6PS 5Hal

NASA Astrophysics Data System (ADS)

Fiechter, S.; Eckstein, J.; Nitsche, R.

1983-03-01

Cu 6PS 5Hal compounds (with Hal = Cl, Br or I) have been crystallized around 950 K by CVT with P, S and Hal (and combinations thereof). Chemical insight into the transport processes was gained from dissociation pressure measurements and spectroscopic vapour analysis. Lacking thermochemical data of the compounds were obtained from Cp measurements. Models, derived for the CVT mechanisms, yield transport rates and directions which agree qualitatively with experiments. The main vapour species (for Hal = C1) are PSCI 3, S 2, PCI 3, P 4S 3 and (CuCl) 3. With a surplus of CuHal, VLS growth via liquid CuHal/Cu 2S phases was observed.

Integration of Electrodeposited Ni-Fe in MEMS with Low-Temperature Deposition and Etch Processes

PubMed Central

Schiavone, Giuseppe; Murray, Jeremy; Perry, Richard; Mount, Andrew R.; Desmulliez, Marc P. Y.; Walton, Anthony J.

2017-01-01

This article presents a set of low-temperature deposition and etching processes for the integration of electrochemically deposited Ni-Fe alloys in complex magnetic microelectromechanical systems, as Ni-Fe is known to suffer from detrimental stress development when subjected to excessive thermal loads. A selective etch process is reported which enables the copper seed layer used for electrodeposition to be removed while preserving the integrity of Ni-Fe. In addition, a low temperature deposition and surface micromachining process is presented in which silicon dioxide and silicon nitride are used, respectively, as sacrificial material and structural dielectric. The sacrificial layer can be patterned and removed by wet buffered oxide etch or vapour HF etching. The reported methods limit the thermal budget and minimise the stress development in Ni-Fe. This combination of techniques represents an advance towards the reliable integration of Ni-Fe components in complex surface micromachined magnetic MEMS. PMID:28772683

Annealing effects on capacitance-voltage characteristics of a-Si/SiN(x) multilayer prepared using hot-wire chemical vapour deposition.

PubMed

Panchal, A K; Rai, D K; Solanki, C S

2011-04-01

Post-deposition annealing of a-Si/SiN(x) multilayer films at different temperature shows varying shift in high frequency (1 MHz) capacitance-voltage (HFCV) characteristics. Various a-Si/SiN(x) multilayer films were deposited using hot wire chemical vapor deposition (HWCVD) and annealed in the temperature range of 800 to 900 degrees C to precipitate Si quantum dots (Si-QD) in a-Si layers. HFCV measurements of the as-deposited and annealed films in metal-insulator-semiconductor (MIS) structures show hysterisis in C-V curves. The hysteresis in the as-deposited films and annealed films is attributed to charge trapping in Si-dangling bonds in a-Si layer and in Si-QD respectively. The charge trapping density in Si-QD increases with temperature while the interface defects density (D(it)) remains constant.

Formation of ohmic contacts to MOCVD grown p-GaN by controlled activation of Mg

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kaminska, E.; Piotrowska, A.; Barcz, A.

2000-11-27

We report on the formation of low resistivity ohmic contacts to p-GaN, r{sub c} < 10{sup {minus}4}{Omega}cm{sup 2}, by increasing the concentration of the active Mg in the subcontact zone, via Zr-mediated release of hydrogen. We have investigated the process of evolution of hydrogen from MOCVD grown p-GaN via Zr-based metallization, and determined the optimum processing conditions (temperature and gas ambient) for fabrication of low resistance ohmic contacts. When the process is conducted in N{sub 2} flow, the metallization remains stable at temperatures required to achieve the ohmic behavior, and the morphology of the metal/semiconductor interface is unaltered by suchmore » a heat treatment. The processing in O{sub 2}, on the contrary, causes the interdiffusion of metallization constituents and the incorporation of oxygen into the semiconductor subcontact region, which could be responsible for increased resistivity of these contacts.« less

Ohmic contact junction of carbon nanotubes fabricated by in situ electron beam deposition

NASA Astrophysics Data System (ADS)

Wang, Y. G.; Wang, T. H.; Lin, X. W.; Dravid, V. P.

2006-12-01

We present experimental evidence of in situ fabrication of multi-walled carbon nanotube junctions via electron beam induced deposition. The tip-to-tip interconnection of the nanotubes involves the alignment of two nanotubes via a piezodriven nanomanipulator and nano-welding by electron beam deposition. Hydrocarbon contamination from the pump oil vapour of the vacuum system of the TEM chamber was used as the solder; this is superior to the already available metallic solders because its composition is identical to the carbon nanotube. The hydrocarbon deposition, with perfect wettability, on the nanotubes establishes strong mechanical binding between the two nanotubes to form an integrated structure. Consequently, the nanotubes cross-linked by the hydrocarbon solder produce good electrical and mechanical connections. The joint dimension was determined by the size of the electron beam, which results in a sound junction with well-defined geometry and the smallest junction size obtained so far. In situ electric measurement showed a linear current-voltage property for the multi-walled nanotube junction.

Atomic layer deposited oxide films as protective interface layers for integrated graphene transfer

NASA Astrophysics Data System (ADS)

Cabrero-Vilatela, A.; Alexander-Webber, J. A.; Sagade, A. A.; Aria, A. I.; Braeuninger-Weimer, P.; Martin, M.-B.; Weatherup, R. S.; Hofmann, S.

2017-12-01

The transfer of chemical vapour deposited graphene from its parent growth catalyst has become a bottleneck for many of its emerging applications. The sacrificial polymer layers that are typically deposited onto graphene for mechanical support during transfer are challenging to remove completely and hence leave graphene and subsequent device interfaces contaminated. Here, we report on the use of atomic layer deposited (ALD) oxide films as protective interface and support layers during graphene transfer. The method avoids any direct contact of the graphene with polymers and through the use of thicker ALD layers (≥100 nm), polymers can be eliminated from the transfer-process altogether. The ALD film can be kept as a functional device layer, facilitating integrated device manufacturing. We demonstrate back-gated field effect devices based on single-layer graphene transferred with a protective Al2O3 film onto SiO2 that show significantly reduced charge trap and residual carrier densities. We critically discuss the advantages and challenges of processing graphene/ALD bilayer structures.

Influence of spatial and temporal variability of subsurface soil moisture and temperature on vapour intrusion

NASA Astrophysics Data System (ADS)

Bekele, Dawit N.; Naidu, Ravi; Chadalavada, Sreenivasulu

2014-05-01

A comprehensive field study was conducted at a site contaminated with chlorinated solvents, mainly trichloroethylene (TCE), to investigate the influence of subsurface soil moisture and temperature on vapour intrusion (VI) into built structures. Existing approaches to predict the risk of VI intrusion into buildings assume homogeneous or discrete layers in the vadose zone through which TCE migrates from an underlying source zone. In reality, the subsurface of the majority of contaminated sites will be subject to significant variations in moisture and temperature. Detailed site-specific data were measured contemporaneously to evaluate the impact of spatial and temporal variability of subsurface soil properties on VI exposure assessment. The results revealed that indoor air vapour concentrations would be affected by spatial and temporal variability of subsurface soil moisture and temperature. The monthly monitoring of soil-gas concentrations over a period of one year at a depth of 3 m across the study site demonstrated significant variation in TCE vapour concentrations, which ranged from 480 to 629,308 μg/m3. Soil-gas wells at 1 m depth exhibited high seasonal variability in TCE vapour concentrations with a coefficient of variation 1.02 in comparison with values of 0.88 and 0.74 in 2 m and 3 m wells, respectively. Contour plots of the soil-gas TCE plume during wet and dry seasons showed that the plume moved across the site, hence locations of soil-gas monitoring wells for human risk assessment is a site specific decision. Subsurface soil-gas vapour plume characterisation at the study site demonstrates that assessment for VI is greatly influenced by subsurface soil properties such as temperature and moisture that fluctuate with the seasons of the year.

UTLS water vapour from SCIAMACHY limb measurementsV3.01 (2002–2012)

PubMed Central

Weigel, K.; Rozanov, A.; Azam, F.; Bramstedt, K.; Damadeo, R.; Eichmann, K.-U.; Gebhardt, C.; Hurst, D.; Kraemer, M.; Lossow, S.; Read, W.; Spelten, N.; Stiller, G. P.; Walker, K. A.; Weber, M.; Bovensmann, H.; Burrows, J. P.

2017-01-01

The SCanning Imaging Absorption spectroMeter for Atmospheric CHartographY (SCIAMACHY) aboard the Envisat satellite provided measurements from August 2002 until April 2012. SCIAMACHY measured the scattered or direct sunlight using different observation geometries. The limb viewing geometry allows the retrieval of water vapour at about 10–25 km height from the near-infrared spectral range (1353–1410 nm). These data cover the upper troposphere and lower stratosphere (UTLS), a region in the atmosphere which is of special interest for a variety of dynamical and chemical processes as well as for the radiative forcing. Here, the latest data version of water vapour (V3.01) from SCIAMACHY limb measurements is presented and validated by comparisons with data sets from other satellite and in situ measurements. Considering retrieval tests and the results of these comparisons, the V3.01 data are reliable from about 11 to 23 km and the best results are found in the middle of the profiles between about 14 and 20 km. Above 20 km in the extra tropics V3.01 is drier than all other data sets. Additionally, for altitudes above about 19 km, the vertical resolution of the retrieved profile is not sufficient to resolve signals with a short vertical structure like the tape recorder. Below 14 km, SCIAMACHY water vapour V3.01 is wetter than most collocated data sets, but the high variability of water vapour in the troposphere complicates the comparison. For 14–20 km height, the expected errors from the retrieval and simulations and the mean differences to collocated data sets are usually smaller than 10 % when the resolution of the SCIAMACHY data is taken into account. In general, the temporal changes agree well with collocated data sets except for the Northern Hemisphere extratropical stratosphere, where larger differences are observed. This indicates a possible drift in V3.01 most probably caused by the incomplete treatment of volcanic aerosols in the retrieval. In all other regions

Estimating past leaf-to-air vapour pressure deficit from terrestrial plant 13C

NASA Astrophysics Data System (ADS)

Turney, Chris S. M.; Barringer, James; Hunt, John E.; McGlone, Matt S.

1999-08-01

13C was determined in lignin extracted from present-day cladodes of Phyllocladus alpinus (a small coniferous tree) from seven well-lit sites across New Zealand. The 13C values ranged from -30.9 to -23.6 and were compared with monthly means of temperature, precipitation, relative humidity and vapour pressure deficit from the nearest recording stations. Of these parameters, the leaf-to-air vapour pressure deficit of the first month of cladode growth and expansion proved to be the most significantly correlated with lignin 13C, over a range of 0.3 to 0.8 kPa, confirming the importance of atmospheric moisture content on stomatal conductance. The carbon isotopic signature of lignin from fossilised cladodes preserved under the Kawakawa Tephra (22.6 k 14C yr BP) on the North Island is identical to that of the whole tissue, suggesting that for this species at least, fossil material can be used to approximate the lignin 13C. The 13C of species- and organ-specific fossil terrestrial plant material therefore provides an excellent method to quantify past changes in leaf-to-air vapour pressure deficit.

Detecting vapour bubbles in simulations of metastable water

DOE Office of Scientific and Technical Information (OSTI.GOV)

González, Miguel A.; Abascal, Jose L. F.; Valeriani, Chantal, E-mail: christoph.dellago@univie.ac.at, E-mail: cvaleriani@quim.ucm.es

2014-11-14

The investigation of cavitation in metastable liquids with molecular simulations requires an appropriate definition of the volume of the vapour bubble forming within the metastable liquid phase. Commonly used approaches for bubble detection exhibit two significant flaws: first, when applied to water they often identify the voids within the hydrogen bond network as bubbles thus masking the signature of emerging bubbles and, second, they lack thermodynamic consistency. Here, we present two grid-based methods, the M-method and the V-method, to detect bubbles in metastable water specifically designed to address these shortcomings. The M-method incorporates information about neighbouring grid cells to distinguishmore » between liquid- and vapour-like cells, which allows for a very sensitive detection of small bubbles and high spatial resolution of the detected bubbles. The V-method is calibrated such that its estimates for the bubble volume correspond to the average change in system volume and are thus thermodynamically consistent. Both methods are computationally inexpensive such that they can be used in molecular dynamics and Monte Carlo simulations of cavitation. We illustrate them by computing the free energy barrier and the size of the critical bubble for cavitation in water at negative pressure.« less

Experimental characterization and modeling for the growth rate of oxide coatings from liquid solutions of metalorganic precursors by ultrasonic pulsed injection in a cold-wall low-pressure reactor

NASA Astrophysics Data System (ADS)

Krumdieck, Susan Pran

Several years ago, a method for depositing ceramic coatings called the Pulsed-MOCVD system was developed by the Raj group at Cornell University in association with Dr. Harvey Berger and Sono-Tek Corporation. The process was used to produce epitaxial thin films of TiO2 on sapphire substrates under conditions of low pressure, relatively high temperature, and very low growth rate. The system came to CU-Boulder when Professor Raj moved here in 1997. It is quite a simple technique and has several advantages over typical CVD systems. The purpose of this dissertation is two-fold; (1) understand the chemical processes, thermodynamics, and kinetics of the Pulsed-MOCVD technique, and (2) determine the possible applications by studying the film structure and morphology over the entire range of deposition conditions. Polycrystalline coatings of ceramic materials were deposited on nickel in the low-pressure, cold-wall reactor from metalorganic precursors, titanium isopropoxide, and a mixture of zirconium isopropoxide and yttria isopropoxide. The process utilized pulsed liquid injection of a dilute precursor solution with atomization by ultrasonic nozzle. Thin films (less than 1mum) with fine-grained microstructure and thick coatings (up to 1mum) with columnar-microstructure were deposited on heated metal substrates by thermal decomposition of a single liquid precursor. The influence of each of the primary deposition parameters, substrate temperature, total flow rate, and precursor concentration on growth rate, conversion efficiency and morphology were investigated. The operating conditions were determined for kinetic, mass transfer, and evaporation process control regimes. Kinetic controlled deposition was found to produce equiaxed morphology while mass transfer controlled deposition produced columnar morphology. A kinetic model of the deposition process was developed and compared to data for deposition of TiO2 from Ti(OC3H7) 4 precursor. The results demonstrate that growth

Turkish Undergraduates' Misconceptions of Evaporation, Evaporation Rate, and Vapour Pressure

ERIC Educational Resources Information Center

Canpolat, Nurtac

2006-01-01

This study focused on students' misconceptions related to evaporation, evaporation rate, and vapour pressure. Open-ended diagnostic questions were used with 107 undergraduates in the Primary Science Teacher Training Department in a state university in Turkey. In addition, 14 students from that sample were interviewed to clarify their written…

A novel Mo-W interlayer approach for CVD diamond deposition on steel

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kundrát, Vojtěch; Sullivan, John; Ye, Haitao, E-mail: h.ye@aston.ac.uk

Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference inmore » the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) – tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.« less

A novel Mo-W interlayer approach for CVD diamond deposition on steel

NASA Astrophysics Data System (ADS)

Kundrát, Vojtěch; Zhang, Xiaoling; Cooke, Kevin; Sun, Hailin; Sullivan, John; Ye, Haitao

2015-04-01

Steel is the most widely used material in engineering for its cost/performance ratio and coatings are routinely applied on its surface to further improve its properties. Diamond coated steel parts are an option for many demanding industrial applications through prolonging the lifetime of steel parts, enhancement of tool performance as well as the reduction of wear rates. Direct deposition of diamond on steel using conventional chemical vapour deposition (CVD) processes is known to give poor results due to the preferential formation of amorphous carbon on iron, nickel and other elements as well as stresses induced from the significant difference in the thermal expansion coefficients of those materials. This article reports a novel approach of deposition of nanocrystalline diamond coatings on high-speed steel (M42) substrates using a multi-structured molybdenum (Mo) - tungsten (W) interlayer to form steel/Mo/Mo-W/W/diamond sandwich structures which overcome the adhesion problem related to direct magnetron sputtering deposition of pure tungsten. Surface, interface and tribology properties were evaluated to understand the role of such an interlayer structure. The multi-structured Mo-W interlayer has been proven to improve the adhesion between diamond films and steel substrates by acting as an effective diffusion barrier during the CVD diamond deposition.

Spectroscopic measurements of plasma plume induced during the laser deposition of the hydroxyapatite

NASA Astrophysics Data System (ADS)

Jedyński, M.; Szymański, Z.; Mróz, W.; Prokopiuk, A.; Jelinek, M.; Kocourek, T.

2004-03-01

Plasma plume induced by ArF exeimer laser ablation of a Ca10(PO4)6(OH)2 hydroxyapatite target during deposition process has been studied in different ambient conditions, i.e. in air or water vapour. ArF laser operated at the wavelength of 193 nm with the pulse energy of 300 mJ and 20 ns pulse duration. Spectroscopic measurements of the emission spectra of plasma plume have been made with the use of a fast gate, lens coupled micro-channel plate (MCP) image intensifier placed between a spectrograph and a 1254 silicon intensified target (SIT) detector connected to an optical multichannel analyser. The electron densities of 1022 ÷ 1023m-3 have been determined from the Stark broadening of Ca I lines as a function of the distance from the target. The expansion of the plasma plume has been studied using the time of flight method. The time-dependent radiation of the 422.673 nm Ca I and 393.366 nm Ca II lines has been, registered with the use of a monochromator and photomultiplier at various distances from the target. Velocities between 104 ÷ 103 m/s have been found. The velocity in air is several times higher than in the case with water vapour. The plasma plume dynamics is also different in both cases. In the presence of water vapour the spliting of the plasma plume appears.

XPS-nanocharacterization of organic layers electrochemically grafted on the surface of SnO2 thin films to produce a new hybrid material coating

NASA Astrophysics Data System (ADS)

Drevet, R.; Dragoé, D.; Barthés-Labrousse, M. G.; Chaussé, A.; Andrieux, M.

2016-10-01

This work presents the synthesis and the characterization of hybrid material thin films obtained by the combination of two processes. The electrochemical grafting of organic layers made of carboxyphenyl moieties is carried out from the reduction of a diazonium salt on tin dioxide (SnO2) thin films previously deposited on Si substrates by metal organic chemical vapor deposition (MOCVD). Since the MOCVD experimental parameters impact the crystal growth of the SnO2 layer (i.e. its morphology and its texturation), various electrochemical grafting models can occur, producing different hybrid materials. In order to evidence the efficiency of the electrochemical grafting of the carboxyphenyl moieties, X-ray Photoelectron Spectroscopy (XPS) is used to characterize the first nanometers in depth of the synthesized hybrid material layer. Then three electrochemical grafting models are proposed.

Application of lemongrass oil in vapour phase for the effective control of anthracnose of 'Sekaki' papaya.

PubMed

Ali, A; Wee Pheng, T; Mustafa, M A

2015-06-01

To evaluate the potential use of lemongrass essential oil vapour as an alternative for synthetic fungicides in controlling anthracnose of papaya. Lemongrass oil used in the study was characterized using gas chromatography-flame ionization detection (GC-FID) before it was tested against anthracnose of papaya in vitro and in vivo. The GC-FID analysis showed that geranial (45·6%) and neral (34·3%) were the major components in lemongrass oil. In vitro study revealed that lemongrass oil vapour at all concentrations tested (33, 66, 132, 264 and 528 μl l(-1) ) suppressed the mycelial growth and conidial germination of Colletotrichum gloeosporioides. For the in vivo study, 'Sekaki' papaya were exposed to lemongrass oil fumigation (0, 7, 14, 28 μl l(-1) ) for 18 h and at room temperature for 9 days. Lemongrass oil vapour at the concentration of 28 μl l(-1) was most effective against anthracnose of artificially inoculated papaya fruit while quality parameters of papaya were not significantly altered. This suggests that lemongrass oil vapour can control anthracnose disease development on papaya without affecting its natural ripening process. The potential practical application of this technology can reduce reliance on synthetic fungicides for the control of postharvest diseases in papaya. © 2015 The Society for Applied Microbiology.

A surface curvature oscillation model for vapour-liquid-solid growth of periodic one-dimensional nanostructures

NASA Astrophysics Data System (ADS)

Wang, Hui; Wang, Jian-Tao; Cao, Ze-Xian; Zhang, Wen-Jun; Lee, Chun-Sing; Lee, Shuit-Tong; Zhang, Xiao-Hong

2015-03-01

While the vapour-liquid-solid process has been widely used for growing one-dimensional nanostructures, quantitative understanding of the process is still far from adequate. For example, the origins for the growth of periodic one-dimensional nanostructures are not fully understood. Here we observe that morphologies in a wide range of periodic one-dimensional nanostructures can be described by two quantitative relationships: first, inverse of the periodic spacing along the length direction follows an arithmetic sequence; second, the periodic spacing in the growth direction varies linearly with the diameter of the nanostructure. We further find that these geometric relationships can be explained by considering the surface curvature oscillation of the liquid sphere at the tip of the growing nanostructure. The work reveals the requirements of vapour-liquid-solid growth. It can be applied for quantitative understanding of vapour-liquid-solid growth and to design experiments for controlled growth of nanostructures with custom-designed morphologies.

Prediction of clothing thermal insulation and moisture vapour resistance of the clothed body walking in wind.

PubMed

Qian, Xiaoming; Fan, Jintu

2006-11-01

Clothing thermal insulation and moisture vapour resistance are the two most important parameters in thermal environmental engineering, functional clothing design and end use of clothing ensembles. In this study, clothing thermal insulation and moisture vapour resistance of various types of clothing ensembles were measured using the walking-able sweating manikin, Walter, under various environmental conditions and walking speeds. Based on an extensive experimental investigation and an improved understanding of the effects of body activities and environmental conditions, a simple but effective direct regression model has been established, for predicting the clothing thermal insulation and moisture vapour resistance under wind and walking motion, from those when the manikin was standing in still air. The model has been validated by using experimental data reported in the previous literature. It has shown that the new models have advantages and provide very accurate prediction.

Experimental and theoretical rationalization of the growth mechanism of silicon quantum dots in non-stoichiometric SiN x : role of chlorine in plasma enhanced chemical vapour deposition.

PubMed

Mon-Pérez, E; Salazar, J; Ramos, E; Salazar, J Santoyo; Suárez, A López; Dutt, A; Santana, G; Monroy, B Marel

2016-11-11

Silicon quantum dots (Si-QDs) embedded in an insulator matrix are important from a technological and application point of view. Thus, being able to synthesize them in situ during the matrix growth process is technologically advantageous. The use of SiH 2 Cl 2 as the silicon precursor in the plasma enhanced chemical vapour deposition (PECVD) process allows us to obtain Si-QDs without post-thermal annealing. Foremost in this work, is a theoretical rationalization of the mechanism responsible for Si-QD generation in a film including an analysis of the energy released by the extraction of HCl and the insertion of silylene species into the terminal surface bonds. From the results obtained using density functional theory (DFT), we propose an explanation of the mechanism responsible for the formation of Si-QDs in non-stoichiometric SiN x starting from chlorinated precursors in a PECVD system. Micrograph images obtained through transmission electron microscopy confirmed the presence of Si-QDs, even in nitrogen-rich (N-rich) samples. The film stoichiometry was controlled by varying the growth parameters, in particular the NH 3 /SiH 2 Cl 2 ratio and hydrogen dilution. Experimental and theoretical results together show that using a PECVD system, along with chlorinated precursors it is possible to obtain Si-QDs at a low substrate temperature without annealing treatment. The optical property studies carried out in the present work highlight the prospects of these thin films for down shifting and as an antireflection coating in silicon solar cells.

Plasma formation in water vapour layers in high conductivity liquids

NASA Astrophysics Data System (ADS)

Kelsey, C. P.; Schaper, L.; Stalder, K. R.; Graham, W. G.

2011-10-01

The vapour layer development stage of relatively low voltage plasmas in conducting solutions has already been well explored. The nature of the discharges formed within the vapour layer however is still largely unexplored. Here we examine the nature of such discharges through a combination of fast imaging and spatially, temporally resolved spectroscopy and electrical characterisation. The experimental setup used is a pin-to-plate discharge configuration with a -350V, 200 μs pulse applied at a repetition rate of 2Hz. A lens, followed by beam splitter allows beams to one Andor ICCD camera to capture images of the plasma emission with a second camera at the exit of a high resolution spectrometer. Through synchronization of the camera images at specified times after plasma ignition (as determined from current-voltage characteristics) they can be correlated with the spectra features. Initial measurements reveal two apparently different plasma formations. Stark broadening of the hydrogen Balmer beta line indicate electron densities of 3 to 5 ×1020 m-3 for plasmas produced early in the voltage pulse and an order of magnitude less for the later plasmas. The vapour layer development stage of relatively low voltage plasmas in conducting solutions has already been well explored. The nature of the discharges formed within the vapour layer however is still largely unexplored. Here we examine the nature of such discharges through a combination of fast imaging and spatially, temporally resolved spectroscopy and electrical characterisation. The experimental setup used is a pin-to-plate discharge configuration with a -350V, 200 μs pulse applied at a repetition rate of 2Hz. A lens, followed by beam splitter allows beams to one Andor ICCD camera to capture images of the plasma emission with a second camera at the exit of a high resolution spectrometer. Through synchronization of the camera images at specified times after plasma ignition (as determined from current

Curvature evolution of 200 mm diameter GaN-on-insulator wafer fabricated through metalorganic chemical vapor deposition and bonding

NASA Astrophysics Data System (ADS)

Zhang, Li; Lee, Kwang Hong; Kadir, Abdul; Wang, Yue; Lee, Kenneth E.; Tan, Chuan Seng; Chua, Soo Jin; Fitzgerald, Eugene A.

2018-05-01

Crack-free 200 mm diameter N-polar GaN-on-insulator (GaN-OI) wafers are demonstrated by the transfer of metalorganic chemical vapor deposition (MOCVD)-grown Ga-polar GaN layers from Si(111) wafers onto SiO2/Si(100) wafers. The wafer curvature of the GaN-OI wafers after the removal of the original Si(111) substrate is correlated with the wafer curvature of the starting GaN-on-Si wafers and the voids on the GaN-on-Si surface that evolve into cracks on the GaN-OI wafers. In crack-free GaN-OI wafers, the wafer curvature during the removal of the AlN nucleation layer, AlGaN strain-compensation buffer layers and GaN layers is correlated with the residual stress distribution within individual layers in the GaN-OI wafer.

Metal-organic chemical vapor deposition of N-polar InN quantum dots and thin films on vicinal GaN

NASA Astrophysics Data System (ADS)

Lund, Cory; Catalano, Massimo; Wang, Luhua; Wurm, Christian; Mates, Thomas; Kim, Moon; Nakamura, Shuji; DenBaars, Steven P.; Mishra, Umesh K.; Keller, Stacia

2018-02-01

N-polar InN layers were deposited using MOCVD on GaN-on-sapphire templates which were miscut 4° towards the GaN m-direction. For thin layers, quantum dot-like features were spontaneously formed to relieve the strain between the InN and GaN layers. As the thickness was increased, the dots elongated along the step direction before growing outward perpendicular to the step direction and coalescing to form a complete InN layer. XRD reciprocal space maps indicated that the InN films relaxed upon quantum dot formation after nominally 1 nm thick growth, resulting in 5-7 nm tall dots with diameters around 20-50 nm. For thicker layers above 10 nm, high electron mobilities of up to 706 cm2/V s were measured using Hall effect measurements indicating high quality layers.

Analysing the mechanisms of soil water and vapour transport in the desert vadose zone of the extremely arid region of northern China

NASA Astrophysics Data System (ADS)

Du, Chaoyang; Yu, Jingjie; Wang, Ping; Zhang, Yichi

2018-03-01

The transport of water and vapour in the desert vadose zone plays a critical role in the overall water and energy balances of near-surface environments in arid regions. However, field measurements in extremely dry environments face many difficulties and challenges, so few studies have examined water and vapour transport processes in the desert vadose zone. The main objective of this study is to analyse the mechanisms of soil water and vapour transport in the desert vadose zone (depth of ∼350 cm) by using measured and modelled data in an extremely arid environment. The field experiments are implemented in an area of the Gobi desert in northwestern China to measure the soil properties, daily soil moisture and temperature, daily water-table depth and temperature, and daily meteorological records from DOYs (Days of Year) 114-212 in 2014 (growing season). The Hydrus-1D model, which simulates the coupled transport of water, vapour and heat in the vadose zone, is employed to simulate the layered soil moisture and temperature regimes and analyse the transport processes of soil water and vapour. The measured results show that the soil water and temperatures near the land surface have visible daily fluctuations across the entire soil profile. Thermal vapour movement is the most important component of the total water flux and the soil temperature gradient is the major driving factor that affects vapour transport in the desert vadose zone. The most active water and heat exchange occurs in the upper soil layer (depths of 0-25 cm). The matric potential change from the precipitation mainly re-draws the spatio-temporal distribution of the isothermal liquid water in the soil near the land surface. The matric potential has little effect on the isothermal vapour and thermal liquid water flux. These findings offer new insights into the liquid water and vapour movement processes in the extremely arid environment.

The nanostructure and microstructure of SiC surface layers deposited by MWCVD and ECRCVD

NASA Astrophysics Data System (ADS)

Dul, K.; Jonas, S.; Handke, B.

2017-12-01

Scanning electron microscopy (SEM) and Atomic force microscopy (AFM) have been used to investigate ex-situ the surface topography of SiC layers deposited on Si(100) by Microwave Chemical Vapour Deposition (MWCVD) -S1,S2 layers and Electron Cyclotron Resonance Chemical Vapor Deposition (ECRCVD) - layers S3,S4, using silane, methane, and hydrogen. The effects of sample temperature and gas flow on the nanostructure and microstructure have been investigated. The nanostructure was described by three-dimensional surface roughness analysis based on digital image processing, which gives a tool to quantify different aspects of surface features. A total of 13 different numerical parameters used to describe the surface topography were used. The scanning electron image (SEM) of the microstructure of layers S1, S2, and S4 was similar, however, layer S3 was completely different; appearing like grains. Nonetheless, it can be seen that no grain boundary structure is present in the AFM images.

CFD simulation of water vapour condensation in the presence of non-condensable gas in vertical cylindrical condensers.

PubMed

Li, Jun-De

2013-02-01

This paper presents the simulation of the condensation of water vapour in the presence of non-condensable gas using computational fluid dynamics (CFD) for turbulent flows in a vertical cylindrical condenser tube. The simulation accounts for the turbulent flow of the gas mixture, the condenser wall and the turbulent flow of the coolant in the annular channel with no assumptions of constant wall temperature or heat flux. The condensate film is assumed to occupy a negligible volume and its effect on the condensation of the water vapour has been taken into account by imposing a set of boundary conditions. A new strategy is used to overcome the limitation of the currently available commercial CFD package to solve the simultaneous simulation of flows involving multispecies and fluids of gas and liquid in separate channels. The results from the CFD simulations are compared with the experimental results from the literature for the condensation of water vapour with air as the non-condensable gas and for inlet mass fraction of the water vapour from 0.66 to 0.98. The CFD simulation results in general agree well with the directly measured quantities and it is found that the variation of heat flux in the condenser tube is more complex than a simple polynomial curve fit. The CFD results also show that, at least for flows involving high water vapour content, the axial velocity of the gas mixture at the interface between the gas mixture and the condensate film is in general not small and cannot be neglected.

CFD simulation of water vapour condensation in the presence of non-condensable gas in vertical cylindrical condensers

PubMed Central

Li, Jun-De

2013-01-01

This paper presents the simulation of the condensation of water vapour in the presence of non-condensable gas using computational fluid dynamics (CFD) for turbulent flows in a vertical cylindrical condenser tube. The simulation accounts for the turbulent flow of the gas mixture, the condenser wall and the turbulent flow of the coolant in the annular channel with no assumptions of constant wall temperature or heat flux. The condensate film is assumed to occupy a negligible volume and its effect on the condensation of the water vapour has been taken into account by imposing a set of boundary conditions. A new strategy is used to overcome the limitation of the currently available commercial CFD package to solve the simultaneous simulation of flows involving multispecies and fluids of gas and liquid in separate channels. The results from the CFD simulations are compared with the experimental results from the literature for the condensation of water vapour with air as the non-condensable gas and for inlet mass fraction of the water vapour from 0.66 to 0.98. The CFD simulation results in general agree well with the directly measured quantities and it is found that the variation of heat flux in the condenser tube is more complex than a simple polynomial curve fit. The CFD results also show that, at least for flows involving high water vapour content, the axial velocity of the gas mixture at the interface between the gas mixture and the condensate film is in general not small and cannot be neglected. PMID:24850953

Carbon Doping of Compound Semiconductor Epitaxial Layers Grown by Metalorganic Chemical Vapor Deposition Using Carbon Tetrachloride.

NASA Astrophysics Data System (ADS)

Cunningham, Brian Thomas

1990-01-01

A dilute mixture of CCl_4 in high purity H_2 has been used as a carbon dopant source for rm Al_ {x}Ga_{1-x}As grown by low pressure metalorganic chemical vapor deposition (MOCVD). To understand the mechanism for carbon incorporation from CCl_4 doping and to provide experimental parameters for the growth of carbon doped device structures, the effects of various crystal growth parameters on CCl _4 doping have been studied, including growth temperature, growth rate, V/III ratio, Al composition, and CCl_4 flow rate. Although CCl _4 is an effective p-type dopant for MOCVD rm Al_{x}Ga_ {1-x}As, injection of CCl_4 into the reactor during growth of InP resulted in no change in the carrier concentration or carbon concentration. Abrupt, heavy carbon doping spikes in GaAs have been obtained using CCl_4 without a dopant memory effect. By annealing samples with carbon doping spikes grown within undoped, n-type, and p-type GaAs, the carbon diffusion coefficient in GaAs at 825 ^circC has been estimated and has been found to depend strongly on the GaAs background doping. Heavily carbon doped rm Al_{x}Ga _{1-x}As/GaAs superlattices have been found to be more stable against impurity induced layer disordering (IILD) than Mg or Zn doped superlattices, indicating that the low carbon diffusion coefficient limits the IILD process. Carbon doping has been used in the base region on an Npn AlGaAs/GaAs heterojunction bipolar transistor (HBT). Transistors with 3 x 10 μm self-aligned emitter fingers have been fabricated which exhibit a current gain cutoff frequency of f_ {rm t} = 26 GHz.

AlGaN-based ultraviolet light-emitting diodes on sputter-deposited AlN templates with epitaxial AlN/AlGaN superlattices

NASA Astrophysics Data System (ADS)

Zhao, Lu; Zhang, Shuo; Zhang, Yun; Yan, Jianchang; Zhang, Lian; Ai, Yujie; Guo, Yanan; Ni, Ruxue; Wang, Junxi; Li, Jinmin

2018-01-01

We demonstrate AlGaN-based ultraviolet light-emitting diodes (UV-LEDs) grown by metalorganic chemical vapor deposition (MOCVD) on sputter-deposited AlN templates upon sapphire substrates. An AlN/AlGaN superlattices structure is inserted as a dislocation filter between the LED structure and the AlN template. The full width at half maximum values for (0002) and (10 1 bar 2) X-ray rocking curves of the n-type Al0.56Ga0.44N layer are 513 and 1205 arcsec, respectively, with the surface roughness of 0.52 nm. The electron concentration and mobility measured by Hall measurement are 9.3 × 1017cm-3 and 54 cm2/V·s at room temperature, respectively. The light output power of a 282-nm LED reaches 0.28 mW at 20 mA with an external quantum efficiency of 0.32%. And the values of leakage current and forward voltage of the LEDs are ∼3 nA at -10 V and 6.9 V at 20 mA, respectively, showing good electrical performance. It is expected that the cost of the UV-LED can be reduced by using sputter-deposited AlN template.

Stable isotope ratios in rainfall and water vapour at Bangalore, Southern India during the monsoon period of 2013

NASA Astrophysics Data System (ADS)

Peethambaran, Rahul; Ghosh, Prosenjit

2015-04-01

Rainwater and water vapour were collected during monsoon rainfall from Bangalore station to identifying the signature of moisture sources. Moisture responsible for the rainfall originates from Arabian Sea and Bay of Bengal and advected to the station together with vapour generated from the local . Total no of samples includes 72 for water vapour and 81 for rainwater respectively. The mean difference between water vapour and rainwater was found to be -13.27±2.5 ‰ for δ18O, -100±9 ‰ for δD, which was calculated from monthly mean values of water vapour and rainwater. The most enriched samples of rainwater and water vapour were found during the pre monsoon months which correspond to temperature maximum at the study location. Lighter isotopic ratios were recorded in samples collected during the starting of monsoon showers which goes to further depletion in δ18O during the period of post monsoon. This was mainly due to the change in the prevailing wind direction from southwest to northeast. Local Meteoric Water Line (LMWL) generated for rainwater (d = 7.49 δ 18O + 5.2555, R² = 0.93) equation suggesting enrichment due to evaporation. Local Vapour Line (LVL) (d = 7.5248 δ 18O + 6.6534,R² = 0.8957) indicates the dominance of vapor from local source. The time series of d-xcess of rainwater and water vapor reveals large variability, coinciding with the presence of transported and local sources. It was observed that rainwater and water vapor exhibits higher values indicating re-evaporation from the region. Repetition of this feature demonstrated pattern of moisture recycling in the atmosphere and the contribution of continental evaporation and transpiration. The sensitivity of isotopes to the sudden change in wind direction was documented by an abrupt variations in the isotope values. Such changes in wind patterns were mostly associated with the prevalence of low pressure depression systems during the monsoon periods. Detailed analysis on role of wind patterns and

Heavy metals in atmospheric surrogate dry deposition

PubMed

Morselli; Cecchini; Grandi; Iannuccilli; Barilli; Olivieri

1999-02-01

This paper describes a methodological approach for the assessment of the amount of surrogate dry deposition of several toxic heavy metals (Cd, Cr, Cu, Ni, Pb, V, Zn) associated with atmospheric particulate matter at ground level. The objectives of the study were twofold: i) the evaluation of several techniques for the digestion of dry deposition samples for trace metal analysis; ii) the comparison of the results from two samplers with different collecting surfaces. A dry solid surface sampler (DRY sampler, Andersen--USA) and a water layer surface sampler (DAS sampler--MTX Italy) were employed. The samples were collected over a one-year period in an urban site of Bologna (northern Italy). A description is given of the complete procedure, from sampling to data elaboration, including sample storage, digestion and analytical methods. According to the results obtained with three different digestion techniques (Teflon bomb, microwave digester and Teflon flask with vapour cooling system), the highest recovery rate was achieved by the Teflon bomb procedure employing an NBS 1648 Standard Reference Material; 90-95% of the elements considered were recovered by dissolution in a pressurized Teflon bomb with an HNO3-HF mixture. Given these results, the technique was adopted for dry deposition sample digestion. On the basis of the amount of heavy metals measured as monthly deposition fluxes (microg/m2), the collecting efficiency of the DAS sampler for a number of elements was found to be as much as two to three times greater than that of the DRY sampler.

The early summertime Saharan heat low: sensitivity of the radiation budget and atmospheric heating to water vapour and dust aerosol

NASA Astrophysics Data System (ADS)

Alamirew, Netsanet K.; Todd, Martin C.; Ryder, Claire L.; Marsham, John H.; Wang, Yi

2018-01-01

The Saharan heat low (SHL) is a key component of the west African climate system and an important driver of the west African monsoon across a range of timescales of variability. The physical mechanisms driving the variability in the SHL remain uncertain, although water vapour has been implicated as of primary importance. Here, we quantify the independent effects of variability in dust and water vapour on the radiation budget and atmospheric heating of the region using a radiative transfer model configured with observational input data from the Fennec field campaign at the location of Bordj Badji Mokhtar (BBM) in southern Algeria (21.4° N, 0.9° E), close to the SHL core for June 2011. Overall, we find dust aerosol and water vapour to be of similar importance in driving variability in the top-of-atmosphere (TOA) radiation budget and therefore the column-integrated heating over the SHL (˜ 7 W m-2 per standard deviation of dust aerosol optical depth - AOD). As such, we infer that SHL intensity is likely to be similarly enhanced by the effects of dust and water vapour surge events. However, the details of the processes differ. Dust generates substantial radiative cooling at the surface (˜ 11 W m-2 per standard deviation of dust AOD), presumably leading to reduced sensible heat flux in the boundary layer, which is more than compensated by direct radiative heating from shortwave (SW) absorption by dust in the dusty boundary layer. In contrast, water vapour invokes a radiative warming at the surface of ˜ 6 W m-2 per standard deviation of column-integrated water vapour in kg m-2. Net effects involve a pronounced net atmospheric radiative convergence with heating rates on average of 0.5 K day-1 and up to 6 K day-1 during synoptic/mesoscale dust events from monsoon surges and convective cold-pool outflows (haboobs). On this basis, we make inferences on the processes driving variability in the SHL associated with radiative and advective heating/cooling. Depending

Chemical vapor deposited carbon nanotubes for aqueous H2-Cl2 fuel cells.

PubMed

Suryavanshi, U B; Bhosale, C H

2010-06-01

Carbon nanotubes having large surface area is an interesting material to develop H2-Cl2 fuel cell electrodes. The attempts were made to deposit carbon nanotubes on porous substrates by chemical vapour deposition. Turpentine oil (C10H16) was used as a precursor, decomposed at 1100 degrees C reactor temperature. Nickel, platinum, tin, Ni-Pt, Ni-Sn, Pt-Sn, Ni-Pt-Sn catalysts were used to grow carbon nanotubes. Nickel was deposited with electrodeposition, platinum with sputter coater and tin with vacuum deposition technique. The developed electrodes were characterized by XRD, SEM, TEM, FTIR, and resistivity by van-der Pauw method. Carbon nanotubes have been formed for 0.25 N nickel deposited for 45 and 60 min; 0.5 N, 0.75 N and 1 N nickel deposited for 15 to 60 min, at the interval of 15. Ni-Pt, Ni-Sn, Pt-Sn and Ni-Pt-Sn activated carbon also shows the well grown CNTs. Aqueous H2-Cl2 fuel cell performance was tested with these grown carbon nanotubes. 40% KCl with 1067 mohm(-1) cm(-1) conductivity was used as electrolyte. Linear sweep voltametry shows reduction potential for hydrogen gas. Chronoamperometry results show better half cell performance for nickel, deposited with 1 N, 45 min deposition time period; and combination of Ni-Pt-Sn with 140, and 110-100 mA/cm2 stable current density respectively.

MOCVD Growth and Characterization of n-type Zinc Oxide Thin Films

NASA Astrophysics Data System (ADS)

Ben-Yaacov, Tammy

In the past decade, there has been widespread effort in the development of zinc oxide as a II-V1 semiconductor material. ZnO has potential advantages in optoelectronip device applications due to its unique electrical and optical properties. What stands out among these properties is its wide direct bandgap of 3.37 eV and its high electrical conductivity and transparency in the visible and near-UV regions of the spectrum. ZnO can be grown heteroepitaxially on GaN under near lattice-matched conditions and homoepitaxially as well, as high-quality bulk ZnO substrates are commercially available. This dissertation focuses on the development of the growth of high-quality, single crystal n-type ZnO films, control of n-type conductivity, as well as its application as a transparent contact material in GaN-based devices. The first part of this dissertation is an extensive heteroepitaxial and homoepitaxial growth study presenting the properties of ZnO(0001) layers grown on GaN(0001) templates and ZnO(0001) substrates. We show that deposition on GaN requires a two-step growth technique involving the growth of a low temperature nucleation layer before growing a high temperature epitaxial layer in order to obtain smooth ZnO films with excellent crystal quality and step-flow surface morphology. We obtained homoepitaxial ZnO(0001) films of structural quality and surface morphology that is comparable to the as-received substrates, and showed that a high growth temperature (≥1000°C) is needed in order to achieve step-flow growth mode. We performed n-type doping experiments, and established the conditions for which Indium effectively controls the n-type conductivity of ZnO films grown on GaN(0001) templates. A peak carrier concentration of 3.22x 10 19cm-3 and minimum sheet resistance of 97 O/square was achieved, while simultaneously maintaining good morphology and crystal quality. Finally, we present In-doped ZnO films implemented as p-contacts for GaN-based solar cells and LEDs

A vapourized Δ(9)-tetrahydrocannabinol (Δ(9)-THC) delivery system part II: comparison of behavioural effects of pulmonary versus parenteral cannabinoid exposure in rodents.

PubMed

Manwell, Laurie A; Ford, Brittany; Matthews, Brittany A; Heipel, Heather; Mallet, Paul E

2014-01-01

Studies of the rewarding and addictive properties of cannabinoids using rodents as animal models of human behaviour often fail to replicate findings from human studies. Animal studies typically employ parenteral routes of administration, whereas humans typically smoke cannabis, thus discrepancies may be related to different pharmacokinetics of parenteral and pulmonary routes of administration. Accordingly, a novel delivery system of vapourized Δ(9)-tetrahydrocannabinol (Δ(9)-THC) was developed and assessed for its pharmacokinetic, pharmacodynamic, and behavioural effects in rodents. A commercially available vapourizer was used to assess the effects of pulmonary (vapourized) administration of Δ(9)-THC and directly compared to parenteral (intraperitoneal, IP) administration of Δ(9)-THC. Sprague-Dawley rats were exposed to pure Δ(9)-THC vapour (1, 2, 5, 10, and 20mg/pad), using a Volcano® vapourizing device (Storz and Bickel, Germany) or IP-administered Δ(9)-THC (0.1, 0.3, 0.5, 1.0mg/kg), and drug effects on locomotor activity, food and water consumption, and cross-sensitization to morphine (5mg/kg) were measured. Vapourized Δ(9)-THC significantly increased feeding during the first hour following exposure, whereas IP-administered Δ(9)-THC failed to produce a reliable increase in feeding at all doses tested. Acute administration of 10mg of vapourized Δ(9)-THC induced a short-lasting stimulation in locomotor activity compared to control in the first of four hours of testing over 7days of repeated exposure; this chronic exposure to 10mg of vapourized Δ(9)-THC did not induce behavioural sensitization to morphine. These results suggest vapourized Δ(9)-THC administration produces behavioural effects qualitatively different from those induced by IP administration in rodents. Furthermore, vapourized Δ(9)-THC delivery in rodents may produce behavioural effects more comparable to those observed in humans. We conclude that some of the conflicting findings in animal

Structural and electrical characteristics of gallium tin oxide thin films prepared by electron cyclotron resonance-metal organic chemical vapor deposition.

PubMed

Park, Ji Hun; Byun, Dongjin; Lee, Joong Kee

2011-08-01

Gallium tin oxide composite (GTO) thin films were prepared by electron cyclotron resonance-metal organic chemical vapor deposition (ECR-MOCVD). The organometallics of tetramethlytin and trimethylgallium were used for precursors of gallium and tin, respectively. X-ray diffraction (XRD) characterization indicated that the gallium tin oxide composite thin films show the nanopolycrystalline of tetragonal rutile structure. Hall measurement indicated that the Ga/[O+Sn] mole ratio play an important role to determine the electrical properties of gallium tin composite oxide thin films. n-type conducting film obtained Ga/[O+Sn] mole ratio of 0.05 exhibited the lowest electrical resistivity of 1.21 x 10(-3) ohms cm. In our experimental range, the optimized carrier concentration of 3.71 x 10(18) cm(-3) was prepared at the Ga/[O+Sn] mole ratio of 0.35.

Effect of argon ion activity on the properties of Y 2O 3 thin films deposited by low pressure PACVD

NASA Astrophysics Data System (ADS)

Barve, S. A.; Jagannath; Deo, M. N.; Kishore, R.; Biswas, A.; Gantayet, L. M.; Patil, D. S.

2010-10-01

Yttrium oxide thin films are deposited by microwave electron cyclotron resonance (ECR) plasma assisted metal organic chemical vapour deposition process using an indegeneously developed Y(thd) 3 {(2,2,6,6-tetramethyl-3,5-heptanedionate)yttrium} precursor. Depositions were carried out at two different argon gas flow rates keeping precursor and oxygen gas flow rate constant. The deposited coatings are characterized by X-ray photoelectron spectroscopy (XPS), glancing angle X-ray diffraction (GIXRD) and infrared spectroscopy. Optical properties of the films are studied by spectroscopic ellipsometry. Hardness and elastic modulus of the films are measured by load depth sensing nanoindentation technique. Stability of the film and its adhesion with the substrate is inferred from the nanoscratch test. It is shown here that, the change in the argon gas flow rates changes the ionization of the gas in the microwave ECR plasma and imposes a drastic change in the characteristics like composition, structure as well as mechanical properties of the deposited film.

Ternary Precursors for Depositing I-III-VI2 Thin Films for Solar Cells via Spray CVD

NASA Technical Reports Server (NTRS)

Banger, K. K.; Hollingsworth, J. A.; Jin, M. H.-C.; Harris, J. D.; Duraj, S. A.; Smith, M.; Scheiman, D.; Bohannan, E. W.; Switzer, J. A.; Buhro, W. E.

2002-01-01

The development of thin-film solar cells on flexible, lightweight, space-qualified substrates provides an attractive cost solution to fabricating solar arrays with high specific power (W/kg). Thin-film fabrication studies demonstrate that ternary single source precursors (SSP's) can be used in either a hot or cold-wall spray chemical vapour deposition (CVD) reactor, for depositing CuInS2, CuGaS2, and CuGaInS2 at reduced temperatures (400 to 450 C), which display good electrical and optical properties suitable for photovoltaic (PV) devices. X-ray diffraction studies, energy dispersive spectroscopy (EDS), and scanning electron microscopy (SEM) confirmed the formation of the single phase CIS, CGS, CIGS thin-films on various substrates at reduced temperatures.

On a non-thermal atmospheric pressure plasma jet used for the deposition of silicon-organic films

NASA Astrophysics Data System (ADS)

Schäfer, Jan; Sigeneger, Florian; Foest, Rüdiger; Loffhagen, Detlef; Weltmann, Klaus-Dieter

2018-05-01

This work represents a concise overview on the results achieved by the authors over the last years on the plasma of a non-thermal reactive plasma jet at atmospheric pressure and of related thin film formation by plasma enhanced chemical vapour deposition (PECVD). The source was developed considering the application of the plasma self-organization for PECVD. The experimental methods comprise spectroscopic measurements of plasma parameters in the active zone, temperature measurements in the active zone and the effluent as well as the analysis of deposited films at the substrate surface. The theoretical investigations are devoted to a single filament in the active zone using a phase-resolved model and to an overall description of the jet including the substrate using a period-averaged model.

Microwave measurements of the absolute values of absorption by water vapour in the atmosphere.

PubMed

Hogg, D C; Guiraud, F O

1979-05-31

MEASUREMENT of the absolute value of absorption by water vapour at microwave frequencies is difficult because the effect is so small. Far in the wings of the absorption lines, in the so-called 'windows' of the spectrum, it is especially difficult to achieve high accuracy in the free atmosphere. But it is in these windows that the behaviour of the absorption is important from both applied and scientific points of view. Satellite communications, remote sensing of the atmosphere, and radioastronomy, are all influenced by this behaviour. Measurements on an Earth-space path are reported here; the results indicate a nonlinear relationship between absorption and water-vapour content.

Features in the distribution of middle atmospheric water vapour as observed by groundbased microwave radiometeres in Switzerland and South Korea.

NASA Astrophysics Data System (ADS)

de Wachter, E.; Haefele, A.; Kaempfer, N.; Ka, S.; Oh, J.

2009-04-01

The University of Bern operates two ground based microwave radiometers to measure the water vapour content in the stratosphere and mesosphere. One instrument is located nearby Bern [47°N, 7°E], Switzerland, and has been providing data since 2002 to the "Network for the Detection of Atmospheric Composition Change", NDACC, as well as to the European project GEOmon. The second radiometer has been operational in Seoul [37°N, 126°E], S-Korea, starting November 2006. Both instruments provide water vapour profiles in the altitude range 25 to 70 km. Long-term measurements of middle atmospheric water vapour by ground-based microwave instruments are sparse. These instruments provide long-term stability and high time resolution, so are in this sense ideal for short time-scale variability studies, monitoring long-term trends and validation of satellites. An analysis between these 2-year overlapping datasets of the European and Asian continent can provide valuable input on the distribution of wave patterns. In this study, we present the measurement characteristics of the instruments, and validate our data with water vapour profiles from the Aura/MLS instrument. In addition, we investigate correlations between these two midlatitudinal stations, gathering information on the spatial distribution of water vapour, particularly for pressures from 1 to 0.03 hPa.

Improving and assessing vapour pressure estimation methods for organic compounds of atmospheric relevance using a Knudsen Effusion Mass Spectrometer (KEMS)

NASA Astrophysics Data System (ADS)

Booth, A. M.; Topping, D. O.; McFiggans, G. B.; Garforth, A.; Percival, C. J.

2009-12-01

Aerosol particles influence climate directly through the scattering and absorbing radiation and indirectly through their role as cloud condensation nuclei (CCN). Traditionally, models aiming to capture the behaviour of aerosols in the atmosphere have concentrated on the role of inorganic compounds. However, organic components, covering a huge range of chemical and physical properties (Jacobson et.al., 2000), may constitute a significant fraction depending on location (Houghton et.al., 2001). Knowledge of pure component vapour pressures is essential for calculations of gas/particle partitioning. There are many methods of estimating vapour pressures but most of the experimental data collected to date has been for intermediate or high pressure compounds (and often measured at temperatures considerably above ambient) and the proportion of experimental data for low (less than 100Pa) vapour pressure compounds has been very small. Hence the datasets used for developing the estimation methods have reflected this bias in addition to the fact that components studied tend to have one or two functional groups at the most. Thus it is unsurprising that some of the estimation methods can give errors in vapour pressure of several orders of magnitude for multifunctional compounds at ambient temperatures. Knudsen Effusion Mass Spectrometer (KEMS) has been used to measure solid state vapour pressures for multifunctional organic compounds based on dicarboxylic acids (Booth et al 2009). In the atmosphere these compounds are likely to exist in the sub-cooled state so Differential Scanning Calorimetry (DSC) was used to obtain thermochemical data to effect a correction between solid and sub-cooled vapour pressures. The group contribution method of Nanoolal and co-workers (Nanoolal et al., 2008) is one of the best predictive methods in terms of reproducing available low volatility vapour pressure data (barley et al., 2009). The Nanoolal method relies on the use of primary and secondary

Wafer scale BN on sapphire substrates for improved graphene transport.

PubMed

Vangala, Shivashankar; Siegel, Gene; Prusnick, Timothy; Snure, Michael

2018-06-11

Wafer scale (2") BN grown by metal organic chemical vapor deposition (MOCVD) on sapphire was examined as a weakly interacting dielectric substrate for graphene, demonstrating improved transport properties over conventional sapphire and SiO 2 /Si substrates. Chemical vapor deposition grown graphene was transferred to BN/sapphire substrates for evaluation of more than 30 samples using Raman and Hall effects measurements. A more than 2x increase in Hall mobility and 10x reduction in sheet carrier density was measured for graphene on BN/sapphire compared to sapphire substrates. Through control of the MOCVD process, BN films with roughness ranging from <0.1 nm to >1 nm were grown and used to study the effects of substrate roughness on graphene transport. Arrays of graphene field effect transistors were fabricated on 2" BN/sapphire substrates demonstrating scalability and device performance enhancement.

Gaalas/Gaas Solar Cell Process Study

NASA Technical Reports Server (NTRS)

Almgren, D. W.; Csigi, K. I.

1980-01-01

Available information on liquid phase, vapor phase (including chemical vapor deposition) and molecular beam epitaxy growth procedures that could be used to fabricate single crystal, heteroface, (AlGa) As/GaAs solar cells, for space applications is summarized. A comparison of the basic cost elements of the epitaxy growth processes shows that the current infinite melt LPE process has the lower cost per cell for an annual production rate of 10,000 cells. The metal organic chemical vapor deposition (MO-CVD) process has the potential for low cost production of solar cells but there is currently a significant uncertainty in process yield, i.e., the fraction of active material in the input gas stream that ends up in the cell. Additional work is needed to optimize and document the process parameters for the MO-CVD process.

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

PubMed Central

Lausund, Kristian Blindheim; Nilsen, Ola

2016-01-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic–inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios. PMID:27876797

All-gas-phase synthesis of UiO-66 through modulated atomic layer deposition

NASA Astrophysics Data System (ADS)

Lausund, Kristian Blindheim; Nilsen, Ola

2016-11-01

Thin films of stable metal-organic frameworks (MOFs) such as UiO-66 have enormous application potential, for instance in microelectronics. However, all-gas-phase deposition techniques are currently not available for such MOFs. We here report on thin-film deposition of the thermally and chemically stable UiO-66 in an all-gas-phase process by the aid of atomic layer deposition (ALD). Sequential reactions of ZrCl4 and 1,4-benzenedicarboxylic acid produce amorphous organic-inorganic hybrid films that are subsequently crystallized to the UiO-66 structure by treatment in acetic acid vapour. We also introduce a new approach to control the stoichiometry between metal clusters and organic linkers by modulation of the ALD growth with additional acetic acid pulses. An all-gas-phase synthesis technique for UiO-66 could enable implementations in microelectronics that are not compatible with solvothermal synthesis. Since this technique is ALD-based, it could also give enhanced thickness control and the possibility to coat irregular substrates with high aspect ratios.

A Theoretical Study of Vapour Phase Nucleation of the Rocket Propellant N2O4

NASA Astrophysics Data System (ADS)

Pal, P.

2003-05-01

The residual vapour of a rocket fuel at the venting stage develops a potential aerodynamic problem which is linked with the vapour phase nucleation phenomena of the propellant. This study, based entirely on molecular treatment, addresses the problem by focusing specifically on the N2O4 propellant which is used in the ARIANE flight. The phenomenon is examined by considering the thermodynamic free energies of N2O4 clusters, leading to the evaluation of nucleation flux rates of critical nuclei at incipient nucleation. Preliminary examinations of the kinetics of flux pulses provide basic explanation from a molecular perspective.

Alcohol vapour detection at the three phase interface using enzyme-conducting polymer composites.

PubMed

Winther-Jensen, Orawan; Kerr, Robert; Winther-Jensen, Bjorn

2014-02-15

Immobilisation of enzymes on a breathable electrode can be useful for various applications where the three-phase interface between gas or chemical vapour, electrolyte and electrode is crucial for the reaction. In this paper, we report the further development of the breathable electrode concept by immobilisation of alcohol dehydrogenase into vapour-phase polymerised poly(3,4-ethylene dioxythiophene) that has been coated onto a breathable membrane. Typical alcohol sensing, whereby the coenzyme β-Nicotinamide adenine dinucleotide (NADH) is employed as a redox-mediator, was successfully used as a model reaction for the oxidation of ethanol. This indicates that the ethanol vapour from the backside of the membrane has access to the active enzyme embedded in the electrode. The detecting range of the sensor is suitable for the detection of ethanol in fruit juices and for the baseline breath ethanol concentration of drunken driving. After continuous operation for 4.5h the system only showed a 20% decrease in the current output. The electrodes maintained 62% in current output after being refrigerated for 76 days. This work is continuing the progress of the immobilisation of specific enzymes for certain electrochemical reactions whereby the three-phase interface has to be maintained and/or the simultaneous separation of gas from liquid is required. © 2013 Elsevier B.V. All rights reserved.

Using Peltier Cells to Study Solid-Liquid-Vapour Transitions and Supercooling

ERIC Educational Resources Information Center

Torzo, Giacomo; Soletta, Isabella; Branca, Mario

2007-01-01

We propose an apparatus for teaching experimental thermodynamics in undergraduate introductory courses, using thermoelectric modules and a real-time data acquisition system. The device may be made at low cost, still providing an easy approach to the investigation of liquid-solid and liquid-vapour phase transitions and of metastable states…

Automated calibration of laser spectrometer measurements of δ18 O and δ2 H values in water vapour using a Dew Point Generator.

PubMed

Munksgaard, Niels C; Cheesman, Alexander W; Gray-Spence, Andrew; Cernusak, Lucas A; Bird, Michael I

2018-06-30

Continuous measurement of stable O and H isotope compositions in water vapour requires automated calibration for remote field deployments. We developed a new low-cost device for calibration of both water vapour mole fraction and isotope composition. We coupled a commercially available dew point generator (DPG) to a laser spectrometer and developed hardware for water and air handling along with software for automated operation and data processing. We characterised isotopic fractionation in the DPG, conducted a field test and assessed the influence of critical parameters on the performance of the device. An analysis time of 1 hour was sufficient to achieve memory-free analysis of two water vapour standards and the δ 18 O and δ 2 H values were found to be independent of water vapour concentration over a range of ≈20,000-33,000 ppm. The reproducibility of the standard vapours over a 10-day period was better than 0.14 ‰ and 0.75 ‰ for δ 18 O and δ 2 H values, respectively (1 σ, n = 11) prior to drift correction and calibration. The analytical accuracy was confirmed by the analysis of a third independent vapour standard. The DPG distillation process requires that isotope calibration takes account of DPG temperature, analysis time, injected water volume and air flow rate. The automated calibration system provides high accuracy and precision and is a robust, cost-effective option for long-term field measurements of water vapour isotopes. The necessary modifications to the DPG are minor and easily reversible. Copyright © 2018 John Wiley & Sons, Ltd.

Uncooled infrared photodetectors in Poland

NASA Astrophysics Data System (ADS)

Piotrowski, J.; Piotrowski, A.

2006-03-01

The history and present status of the middle and long wavelength Hg1-xCdxTe infrared detectors in Poland are reviewed. Research and development efforts in Poland were concentrated mostly on uncooled market niche. Technology of the infrared photodetectors has been developed by several research groups. The devices are based on mercury-based variable band gap semiconductor alloys. Modified isothermal vapour phase epitaxy (ISOVPE) has been used for many years for research and commercial fabrication of photoconductive, photoelectromagnetic and other devices. Bulk growth and liquid phase epitaxy was also used. At present, the fabrication of IR devices relies on low temperature epitaxial technique, namely metalorganic vapour phase deposition (MOCVD), frequently in combination with the ISOVPE. Photoconductive and photoelectromagnetic detectors are still in production. The devices are gradually replaced with photovoltaic devices which offer inherent advantages of no electric or magnetic bias, no heat load and no flicker noise. Potentially, the PV devices could offer high performance and very fast response. At present, the uncooled long wavelength devices of conventional design suffer from two issues; namely low quantum efficiency and very low junction resistance. It makes them useless for practical applications. The problems have been solved with advanced 3D band gap engineered architecture, multiple cell heterojunction devices connected in series, monolithic integration of the detectors with microoptics and other improvements. Present fabrication program includes devices which are optimized for operation at any wavelength within a wide spectral range 1-15 μm and 200-300 K temperature range. Special solutions have been applied to improve speed of response. Some devices show picoseconds range response time. The devices have found numerous civilian and military applications.

Chronic psychological effects of exposure to mercury vapour among chlorine-alkali plant workers.

PubMed

Pranjić, N; Sinanović, O; Jakubović, R

2003-01-01

Quantitative assessment of nervous system function is essential in characterising the nature and extent of impairment in individuals experiencing symptoms following work-place mercury vapour exposure. The purpose of this study was the application of standardised tests of behavioural, psychomotor and memory function to understand the neuropsychological effects of mercury in occupationally exposed chlorine-alkali plant workers. The study comprised 45 workers at a chlorine-alkali plant with the mean age of 39.36 +/- 5.94 years, who had been exposed to daily inhalation of mercury vapour over long-term employment of 16.06 +/- 4.29 years. The cumulative mercury index was 155.32 +/- 95.02 micrograms/g creatinine, the mean of urinary mercury concentrations on the first day of the study was 119.50 +/- 157.24 micrograms/g creatinine, and the mean of urinary mercury concentrations 120 days after cessation of exposure was 21.70 +/- 26.07 micrograms/g creatinine. The analysis included tests of behavioural, psychomotor and memory function. The behavioural test battery consisted of: Environmental Worry Scale (EWS), Minnesota Modified Personal Inventory (MMPI-2), Purdue standard 25 minute test, and adapted, 10 minutes test, Bender's Visual-Motor Gestalt test (BGT), and Eysenck Personality Inventory (EPQ). The data were compared to a control group of 32 not directly exposed workers. In the mercury vapour exposed workers with relatively high level exposure to inorganic mercury vapour (TWA/TLV = 0.12 mg/m3/0.025 mg/m3) we identified somatic depression-hypochondria symptoms with higher scores for scales: hysteria (P < 0.001), schizoid and psycho-asthenia (MMPI-2). The mercury-exposed workers had introvert behaviour (EPQ, MMPI-2). The cognitive disturbances in mercury-exposed workers were identified as: concentration difficulty, psychomotor, perceptual and motor coordination disturbances, and brain effects. We identified fine tremor of the hands in 34 out of 45 mercury-exposed workers

Behaviour of the iron vapour core in the arc of a controlled short-arc GMAW process with different shielding gases

NASA Astrophysics Data System (ADS)

Wilhelm, G.; Kozakov, R.; Gött, G.; Schöpp, H.; Uhrlandt, D.

2012-02-01

The controlled metal transfer process (CMT) is a variation of the gas metal arc welding (GMAW) process which periodically varies wire feeding speed. Using a short-arc burning phase to melt the wire tip before the short circuit, heat input to the workpiece is reduced. Using a steel wire and a steel workpiece, iron vapour is produced in the arc, its maximum concentration lying centrally. The interaction of metal vapour and welding gas considerably impacts the arc profile and, consequently, the heat transfer to the weldpool. Optical emission spectroscopy has been applied to determine the radial profiles of the plasma temperature and iron vapour concentration, as well as their temporal behaviour in the arc period for different mixtures of Ar, O2 and CO2 as shielding gases. Both the absolute iron vapour density and the temporal expansion of the iron core differ considerably for the gases Ar + 8%O2, Ar + 18% CO2 and 100% CO2 respectively. Pronounced minimum in the radial temperature profile is found in the arc centre in gas mixtures with high Ar content under the presence of metal vapour. This minimum disappears in pure CO2 gas. Consequently, the temperature and electrical and thermal conductivity in the arc when CO2 is used as a shielding gas are considerably lower.

Delaying microbial proliferation in freshly peeled shallots by active packaging incorporating ethanol vapour-controlled release sachets and low storage temperature.

PubMed

Utto, Weerawate; Preutikul, Rittirong; Malila, Patcharee; Noomhorm, Athapol; Bronlund, John E

2018-03-01

This research was conducted to investigate effects of ethanol vapour released in active packaging and storage temperatures on the quality of freshly peeled shallots. The package tested was a solid polypropylene tray incorporating an ethanol vapour-controlled release sachet. The sachet was made of an aluminium foil film on one side and either low-density polyethylene or nylon/polyethylene on the other. Individual sachets contained silica gel adsorbent as the carrier pre-loaded with ethanol. One sachet was placed in each tray containing the peeled shallots and the tray was heat sealed with the low-density polyethylene film lid. Packages were stored at either 10 or 25 ℃ for 10 d. Trays containing only peeled shallots were designated as controls. High storage temperature stimulated quality changes in the shallots. Although ethanol vapour accumulated in the active package headspace, the extent to which ethanol concentrations increased within the shallots was not significantly different from that in the control packages. Microbial proliferation in terms of yeast and mould counts could be delayed through a combination of 10 ℃ and ethanol vapour released from the low-density polyethylene sachet. The ethanol vapour accumulated in the packages did not have a significant effect on mass loss, firmness, and colour changes in the peeled shallots, or on the concentrations of oxygen and carbon dioxide in the packages.

Development of graphene nanoplatelet embedded polymer microcantilever for vapour phase explosive detection applications

DOE Office of Scientific and Technical Information (OSTI.GOV)

Ray, Prasenjit; Pandey, Swapnil; Ramgopal Rao, V.

2014-09-28

In this work, a graphene based strain sensor has been reported for explosive vapour detection applications by exploiting the piezoresistive property of graphene. Instead of silicon based cantilevers, a low cost polymeric micro-cantilever platform has been used to fabricate this strain sensor by embedding the graphene nanoplatelet layer inside the beam. The fabricated devices were characterized for their mechanical and electromechanical behaviour. This device shows a very high gauge factor which is around ~144. Also the resonant frequency of these cantilevers is high enough such that the measurements are not affected by environmental noise. These devices have been used inmore » this work for reliable detection of explosive vapours such as 2,4,6-Trinitrotoluene down to parts-per-billion concentrations in ambient conditions.« less

Adsorption of water vapour and the specific surface area of arctic zone soils (Spitsbergen)

NASA Astrophysics Data System (ADS)

Cieśla, Jolanta; Sokołowska, Zofia; Witkowska-Walczak, Barbara; Skic, Kamil

2018-01-01

Water vapour/nitrogen adsorption were investigated and calculated the specific surface areas of arctic-zone soil samples (Turbic Cryosols) originating from different micro-relief forms (mud boils, cell forms and sorted circles) and from different depths. For the characterisation of the isotherms obtained for arctic soils, the Brunauer-Emmet-Teller model was then compared with the two other models (Aranovich-Donohue and Guggenheim-Anderson-de Boer) which were developed from Brunauer-Emmet-Teller. Specific surface area was calculated using the Brunauer-Emmet-Teller model at p p0-1 range of 0.05-0.35 for the water vapour desorption and nitrogen adsorption isotherms. The values of total specific surface area were the highest in Cryosols on mud boils, lower on cell forms, and the lowest on sorted circles. Such tendency was observed for the results obtained by both the water vapour and nitrogen adsorption. The differences in the values of specific surface area at two investigated layers were small. High determination coefficients were obtained for relationships between the specific surface areas and contents of clay and silt fraction in Cryosols. No statistically significant correlation between the total carbon amount and the values of specific surface area in Cryosols has been found.

Graphene decorated microelectrodes for simultaneous detection of ascorbic, dopamine, and folic acids by means of chemical vapor deposition

NASA Astrophysics Data System (ADS)

Namdar, N.; Hassanpour Amiri, M.; Dehghan Nayeri, F.; Gholizadeh, A.; Mohajerzadeh, S.

2015-09-01

In this paper, high quality and large area graphene layers were synthesized using thermal chemical vapour deposition on copper foil substrates. We use graphene incorporated electrodes to measure simultaneously ascorbic acid, dopamine and folic acid. Cyclic voltammetry and differential pulse voltammetry methods were used to evaluate electrochemical behaviour of the grown graphene layers. The graphene-modified electrode shows large electrochemical potential difference compared to bare gold electrodes with higher current responses. Also our fabricated electrodes configuration can be used easily for microfluidic analysis.

Airborne hygrometer calibration inter-comparison against a metrological water vapour standard

NASA Astrophysics Data System (ADS)

Smorgon, Denis; Boese, Norbert; Ebert, Volker

2014-05-01

Water vapour is the most important atmospheric greenhouse gas, which causes a major feedback to warming and other changes in the climate system. Knowledge of the distribution of water vapour and its climate induced changes is especially important in the upper troposphere and lower stratosphere (UT/LS) where vapour plays a critical role in atmospheric radiative balance, cirrus cloud formation, and photochemistry. But, our understanding of water in the UT/LS is limited by significant uncertainties in current UT/LS water measurements. One of the most comprehensive inter-comparison campaigns for airborne hygrometers, termed AQUAVIT (AV1) [1], took place in 2007 at the AIDA chamber at the Karlsruhe Institute of Technology (KIT) in Germany. AV1 was a well-defined, referred, blind inter-comparison of 22 airborne field instruments from 17 international research groups. One major metrological deficit of AV1, however, was, that no traceable reference instrument participated in the inter-comparison experiments and that the calibration procedures of the participating instruments were not monitored or interrogated. Consequently a follow-up inter-comparison was organized in April 2013, which for the first time also provides a traceable link to the international humidity scale. This AQUAVIT2 (AV2) campaign (details see: http://www.imk-aaf.kit.edu/aquavit/index.php/Main_Page) was again located at KIT/AIDA and organised by an international organizing committee including KIT, PTB, FZJ and others. Generally AV2 is divided in two parallel comparisons: 1) AV2-A uses the AIDA chamber for a simultaneous comparison of all instruments (incl. sampling and in-situ instruments) over a broad range of conditions characteristic for the UT/LS; 2) AV2-B, about which this paper is reporting, is a sequential comparison of selected hygrometers and (when possible) their reference calibration infrastructures by means of a chilled mirror hygrometer traced back to the primary National humidity standard

Supercooled liquid vapour pressures and related thermodynamic properties of polycyclic aromatic hydrocarbons determined by gas chromatography.

PubMed

Haftka, Joris J H; Parsons, John R; Govers, Harrie A J

2006-11-24

A gas chromatographic method using Kováts retention indices has been applied to determine the liquid vapour pressure (P(i)), enthalpy of vaporization (DeltaH(i)) and difference in heat capacity between gas and liquid phase (DeltaC(i)) for a group of polycyclic aromatic hydrocarbons (PAHs). This group consists of 19 unsubstituted, methylated and sulphur containing PAHs. Differences in log P(i) of -0.04 to +0.99 log units at 298.15K were observed between experimental values and data from effusion and gas saturation studies. These differences in log P(i) have been fitted with multilinear regression resulting in a compound and temperature dependent correction. Over a temperature range from 273.15 to 423.15K, differences in corrected log P(i) of a training set (-0.07 to +0.03 log units) and a validation set (-0.17 to 0.19 log units) were within calculated error ranges. The corrected vapour pressures also showed a good agreement with other GC determined vapour pressures (average -0.09 log units).

Pan-derived isotopic composition of atmospheric vapour in a Mediterranean wetland (Rhône River Delta, France).

PubMed

Vallet-Coulomb, Christine; Cartapanis, Olivier; Radakovitch, Olivier; Sonzogni, Corinne; Pichaud, Marc

2010-03-01

A continuous record of atmospheric vapour isotopic composition (delta(A)) can be derived from the isotope mass balance of a water body submitted to natural evaporation. In this paper, we present preliminary results of the application of this method to a drying evaporation pan, located in a Mediterranean wetland, during a two-month summer period. Results seem consistent with few atmospheric vapour data based on the assumption of isotopic equilibrium with precipitation, but we observed a shift between pan-derived delta(A) and the composition of vapour samples collected by cold trapping. These results suggest that further investigations are necessary to evaluate the effect of diurnal variations of atmospheric conditions on the applicability of the pan-evaporation method, and on the representative of grab atmospheric samples. We also propose a sensitivity analysis for evaluating the impact of the different measured components on delta(A) calculation, and show an improvement in the method efficiency as the pan is drying.

Liquid and vapour-phase antifungal activities of selected essential oils against candida albicans: microscopic observations and chemical characterization of cymbopogon citratus

PubMed Central

2010-01-01

Background Use of essential oils for controlling Candida albicans growth has gained significance due to the resistance acquired by pathogens towards a number of widely-used drugs. The aim of this study was to test the antifungal activity of selected essential oils against Candida albicans in liquid and vapour phase and to determine the chemical composition and mechanism of action of most potent essential oil. Methods Minimum Inhibitory concentration (MIC) of different essential oils in liquid phase, assayed through agar plate dilution, broth dilution & 96-well micro plate dilution method and vapour phase activity evaluated through disc volatilization method. Reduction of C. albicans cells with vapour exposure was estimated by kill time assay. Morphological alteration in treated/untreated C. albicans cells was observed by the Scanning electron microscopy (SEM)/Atomic force microscopy (AFM) and chemical analysis of the strongest antifungal agent/essential oil has been done by GC, GC-MS. Results Lemon grass (Cymbopogon citratus) essential oil exhibited the strongest antifungal effect followed by mentha (Mentha piperita) and eucalyptus (Eucalyptus globulus) essential oil. The MIC of lemon grass essential oil in liquid phase (288 mg/l) was significantly higher than that in the vapour phase (32.7 mg/l) and a 4 h exposure was sufficient to cause 100% loss in viability of C. albicans cells. SEM/AFM of C. albicans cells treated with lemon grass essential oil at MIC level in liquid and vapour phase showed prominent shrinkage and partial degradation, respectively, confirming higher efficacy of vapour phase. GC-MS analysis revealed that lemon grass essential oil was dominated by oxygenated monoterpenes (78.2%); α-citral or geranial (36.2%) and β-citral or neral (26.5%), monoterpene hydrocarbons (7.9%) and sesquiterpene hydrocarbons (3.8%). Conclusion Lemon grass essential oil is highly effective in vapour phase against C. albicans, leading to deleterious morphological

Novel method for water vapour monitoring using wireless communication networks measurements

NASA Astrophysics Data System (ADS)

David, N.; Alpert, P.; Messer, H.

2009-04-01

We propose a new technique for monitoring near-surface water vapour, by estimating humidity from data collected through existing wireless communication networks. Water vapour plays a crucial part in a variety of atmospheric processes. As the most influential of greenhouse gases, it absorbs long-wave terrestrial radiation. The water vapour cycle of evaporation and recondensation is a major energy redistributing mechanism transferring heat energy from the Earth's surface to the atmosphere. Additionally, humidity has an important role in weather forecasting as a key variable required for initialization of atmospheric models and hazard warning techniques. However, current methods of monitoring humidity suffer from low spatial resolution, high cost or a lack of precision when measuring near ground levels. Weather conditions and atmospheric phenomena affect the electromagnetic channel, causing attenuations to the radio signals. Thus, wireless communication networks are in effect built-in environmental monitoring facilities. The wireless microwave links, used in these networks, are widely deployed by cellular providers for backhaul communication between base stations, a few tens of meters above ground level. As a result, the proposed method can provide moisture observations at high temporal and spatial resolution. Further, the implementation cost is minimal, since the data used is already collected and saved by the cellular operators. In addition - many of these links are installed in areas where access is difficult such as orographic terrain and complex topography. As such, our method enables measurements in places that have been hard to measure in the past, or have never been measured before. The technique is restricted to weather conditions which include absence of rain, fog or clouds along the propagation path. We present results from real-data measurements taken from microwave links used in a backhaul cellular network that show very good agreement with surface

Investigation of the vapour-plasma plume in the welding of titanium by high-power ytterbium fibre laser radiation

NASA Astrophysics Data System (ADS)

Bykovskiy, D. P.; Petrovskii, V. N.; Uspenskiy, S. A.

2015-03-01

The vapour-plasma plume produced in the welding of 6-mm thick VT-23 titanium alloy plates by ytterbium fibre laser radiation of up to 10 kW power is studied in the protective Ar gas medium. High-speed video filming of the vapour-plasma plume is used to visualise the processes occurring during laser welding. The coefficient of inverse bremsstrahlung by the welding plasma plume is calculated from the data of the spectrometric study.

MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2001-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Method for making MgO buffer layers on rolled nickel or copper as superconductor substrates

DOEpatents

Paranthaman, Mariappan; Goyal, Amit; Kroeger, Donald M.; List, III, Frederic A.

2002-01-01

Buffer layer architectures are epitaxially deposited on biaxially-textured rolled-Ni and/or Cu substrates for high current conductors, and more particularly buffer layer architectures such as MgO/Ag/Pt/Ni, MgO/Ag/Pd/Ni, MgO/Ag/Ni, MgO/Ag/Pd/Cu, MgO/Ag/Pt/Cu, and MgO/Ag/Cu. Techniques used to deposit these buffer layers include electron beam evaporation, thermal evaporation, rf magnetron sputtering, pulsed laser deposition, metal-organic chemical vapor deposition (MOCVD), combustion CVD, and spray pyrolysis.

Altered host resistance to Listeria monocytogenes in mice exposed to 1-chloroacetophenone (CN) vapours

DOE Office of Scientific and Technical Information (OSTI.GOV)

Kumar, P.; Kumar, P.; Zachariah, K.

1992-06-01

Short term repeated exposure of 1-chloroacetophenone (CN) vapours at a concentration of 0.153 mg per litre for 15 minutes daily on 10 consecutive days in Swiss albino male mice resulted in increased mortality to Listeria monocytogenes. Significantly elevated bacterial growth was observed in the spleen and liver of the CN exposed animals. The increased bacterial count in these organs was evident within 4-6 days post challenge as compared to vehicle exposed infected and unexposed infected animals. Increased susceptibility to infection has been considered to be the function of immune alteration due to cumulative short term effects of CN vapour inhalation.more » This may be attributed to immunotoxic effects of CN on T-cells mediated macrophage functions.« less

Vapour pressure and adiabatic cooling from champagne: slow-motion visualization of gas thermodynamics

NASA Astrophysics Data System (ADS)

Vollmer, Michael; Möllmann, Klaus-Peter

2012-09-01

We present two simple demonstration experiments recorded with high-speed cameras in the fields of gas dynamics and thermal physics. The experiments feature vapour pressure effects as well as adiabatic cooling observed upon opening a bottle of champagne.

Direct synthesis of graphene on silicon oxide by low temperature plasma enhanced chemical vapor deposition.

PubMed

Muñoz, Roberto; Martínez, Lidia; López-Elvira, Elena; Munuera, Carmen; Huttel, Yves; García-Hernández, Mar

2018-06-27

Direct graphene growth on silicon with a native oxide using plasma enhanced chemical vapour deposition at low temperatures [550 °C-650 °C] is demonstrated for the first time. It is shown that the fine-tuning of a two-step synthesis with gas mixtures C2H2/H2 yields monolayer and few layer graphene films with a controllable domain size from 50 nm to more than 300 nm and the sheet resistance ranging from 8 kΩ sq-1 to less than 1.8 kΩ sq-1. Differences are understood in terms of the interaction of the plasma species - chiefly atomic H - with the deposited graphene and the native oxide layer. The proposed low temperature direct synthesis on an insulating substrate does not require any transfer processes and improves the compatibility with the current industrial processes.

Studies on the effect of ammonia flow rate induced defects in gallium nitride grown by MOCVD

NASA Astrophysics Data System (ADS)

Suresh, S.; Lourdudoss, S.; Landgren, G.; Baskar, K.

2010-10-01

Gallium nitride (GaN) epitaxial layers were grown with different V/III ratios by varying the ammonia (NH 3) flow rate, keeping the flow rate of the other precursor, trimethylgallium (TMG), constant, in an MOCVD system. X-ray rocking curve widths of a (1 0 2) reflection increase with an increase in V/III ratio while the (0 0 2) rocking curve widths decrease. The dislocation density was found to increase with an increase in ammonia flow rate, as determined by hot-wet chemical etching and atomic force microscopy. 77 K photoluminescence studies show near band emission at 3.49 eV and yellow luminescence peaking at 2.2 eV. The yellow luminescence (YL) intensity decreases with an increase in V/III ratio. Positron annihilation spectroscopy studies show that the concentration of Ga-like vacancies increases with an increase in ammonia flow rate. This study confirms that the yellow luminescence in the GaN arises due to deep levels formed by gallium vacancies decorated with oxygen atoms.

Unambiguous detection of nitrated explosive vapours by fluorescence quenching of dendrimer films

NASA Astrophysics Data System (ADS)

Geng, Yan; Ali, Mohammad A.; Clulow, Andrew J.; Fan, Shengqiang; Burn, Paul L.; Gentle, Ian R.; Meredith, Paul; Shaw, Paul E.

2015-09-01

Unambiguous and selective standoff (non-contact) infield detection of nitro-containing explosives and taggants is an important goal but difficult to achieve with standard analytical techniques. Oxidative fluorescence quenching is emerging as a high sensitivity method for detecting such materials but is prone to false positives--everyday items such as perfumes elicit similar responses. Here we report thin films of light-emitting dendrimers that detect vapours of explosives and taggants selectively--fluorescence quenching is not observed for a range of common interferents. Using a combination of neutron reflectometry, quartz crystal microbalance and photophysical measurements we show that the origin of the selectivity is primarily electronic and not the diffusion kinetics of the analyte or its distribution in the film. The results are a major advance in the development of sensing materials for the standoff detection of nitro-based explosive vapours, and deliver significant insights into the physical processes that govern the sensing efficacy.

Surface and Thin Film Analysis during Metal Organic Vapour Phase Epitaxial Growth

NASA Astrophysics Data System (ADS)

Richter, Wolfgang

2007-06-01

In-situ analysis of epitaxial growth is the essential ingredient in order to understand the growth process, to optimize growth and last but not least to monitor or even control the epitaxial growth on a microscopic scale. In MBE (molecular beam epitaxy) in-situ analysis tools existed right from the beginning because this technique developed from Surface Science technology with all its electron based analysis tools (LEED, RHEED, PES etc). Vapour Phase Epitaxy, in contrast, remained for a long time in an empirical stage ("alchemy") because only post growth characterisations like photoluminescence, Hall effect and electrical conductivity were available. Within the last two decades, however, optical techniques were developed which provide similar capabilities as in MBE for Vapour Phase growth. I will discuss in this paper the potential of Reflectance Anisotropy Spectroscopy (RAS) and Spectroscopic Ellipsometry (SE) for the growth of thin epitaxial semiconductor layers with zincblende (GaAs etc) and wurtzite structure (GaN etc). Other techniques and materials will be also mentioned.

Unambiguous detection of nitrated explosive vapours by fluorescence quenching of dendrimer films.

PubMed

Geng, Yan; Ali, Mohammad A; Clulow, Andrew J; Fan, Shengqiang; Burn, Paul L; Gentle, Ian R; Meredith, Paul; Shaw, Paul E

2015-09-15

Unambiguous and selective standoff (non-contact) infield detection of nitro-containing explosives and taggants is an important goal but difficult to achieve with standard analytical techniques. Oxidative fluorescence quenching is emerging as a high sensitivity method for detecting such materials but is prone to false positives—everyday items such as perfumes elicit similar responses. Here we report thin films of light-emitting dendrimers that detect vapours of explosives and taggants selectively—fluorescence quenching is not observed for a range of common interferents. Using a combination of neutron reflectometry, quartz crystal microbalance and photophysical measurements we show that the origin of the selectivity is primarily electronic and not the diffusion kinetics of the analyte or its distribution in the film. The results are a major advance in the development of sensing materials for the standoff detection of nitro-based explosive vapours, and deliver significant insights into the physical processes that govern the sensing efficacy.

Unambiguous detection of nitrated explosive vapours by fluorescence quenching of dendrimer films

PubMed Central

Geng, Yan; Ali, Mohammad A.; Clulow, Andrew J.; Fan, Shengqiang; Burn, Paul L.; Gentle, Ian R.; Meredith, Paul; Shaw, Paul E.

2015-01-01

Unambiguous and selective standoff (non-contact) infield detection of nitro-containing explosives and taggants is an important goal but difficult to achieve with standard analytical techniques. Oxidative fluorescence quenching is emerging as a high sensitivity method for detecting such materials but is prone to false positives—everyday items such as perfumes elicit similar responses. Here we report thin films of light-emitting dendrimers that detect vapours of explosives and taggants selectively—fluorescence quenching is not observed for a range of common interferents. Using a combination of neutron reflectometry, quartz crystal microbalance and photophysical measurements we show that the origin of the selectivity is primarily electronic and not the diffusion kinetics of the analyte or its distribution in the film. The results are a major advance in the development of sensing materials for the standoff detection of nitro-based explosive vapours, and deliver significant insights into the physical processes that govern the sensing efficacy. PMID:26370931

The effect of coherent stirring on the advection–condensation of water vapour

PubMed Central

Vanneste, Jacques

2017-01-01

Atmospheric water vapour is an essential ingredient of weather and climate. The key features of its distribution can be represented by kinematic models which treat it as a passive scalar advected by a prescribed flow and reacting through condensation. Condensation acts as a sink that maintains specific humidity below a prescribed, space-dependent saturation value. To investigate how the interplay between large-scale advection, small-scale turbulence and condensation controls moisture distribution, we develop simple kinematic models which combine a single circulating flow with a Brownian-motion representation of turbulence. We first study the drying mechanism of a water-vapour anomaly released inside a vortex at an initial time. Next, we consider a cellular flow with a moisture source at a boundary. The statistically steady state attained shows features reminiscent of the Hadley cell such as boundary layers, a region of intense precipitation and a relative humidity minimum. Explicit results provide a detailed characterization of these features in the limit of strong flow. PMID:28690417

The effect of coherent stirring on the advection-condensation of water vapour

NASA Astrophysics Data System (ADS)

Tsang, Yue-Kin; Vanneste, Jacques

2017-06-01

Atmospheric water vapour is an essential ingredient of weather and climate. The key features of its distribution can be represented by kinematic models which treat it as a passive scalar advected by a prescribed flow and reacting through condensation. Condensation acts as a sink that maintains specific humidity below a prescribed, space-dependent saturation value. To investigate how the interplay between large-scale advection, small-scale turbulence and condensation controls moisture distribution, we develop simple kinematic models which combine a single circulating flow with a Brownian-motion representation of turbulence. We first study the drying mechanism of a water-vapour anomaly released inside a vortex at an initial time. Next, we consider a cellular flow with a moisture source at a boundary. The statistically steady state attained shows features reminiscent of the Hadley cell such as boundary layers, a region of intense precipitation and a relative humidity minimum. Explicit results provide a detailed characterization of these features in the limit of strong flow.

The effect of coherent stirring on the advection-condensation of water vapour.

PubMed

Tsang, Yue-Kin; Vanneste, Jacques

2017-06-01

Atmospheric water vapour is an essential ingredient of weather and climate. The key features of its distribution can be represented by kinematic models which treat it as a passive scalar advected by a prescribed flow and reacting through condensation. Condensation acts as a sink that maintains specific humidity below a prescribed, space-dependent saturation value. To investigate how the interplay between large-scale advection, small-scale turbulence and condensation controls moisture distribution, we develop simple kinematic models which combine a single circulating flow with a Brownian-motion representation of turbulence. We first study the drying mechanism of a water-vapour anomaly released inside a vortex at an initial time. Next, we consider a cellular flow with a moisture source at a boundary. The statistically steady state attained shows features reminiscent of the Hadley cell such as boundary layers, a region of intense precipitation and a relative humidity minimum. Explicit results provide a detailed characterization of these features in the limit of strong flow.

We didn't start this fireless vapour: e-cigarette legislation in Australia.

PubMed

Krawitz, Marilyn

2014-12-01

Electronic cigarettes (or e-cigarettes) are devices that heat a cartridge containing a solution that becomes a vapour for the user to inhale. The vapour may or may not contain nicotine. E-cigarettes do not contain tar and other toxins, which traditional cigarettes do, so they may be less damaging to people's health than smoking traditional cigarettes. However, no studies exist about the long-term effects of using e-cigarettes yet. It is illegal to sell e-cigarettes with nicotine in Australia, though Australians may import a three-month supply from overseas. It is legal to sell e-cigarettes with nicotine in some other jurisdictions, such as the United Kingdom and the European Union. This article argues that the Australian government should consider legalising the sale of e-cigarettes with nicotine in Australia for health, safety and economic reasons and to protect youth. If the sale of e-cigarettes with nicotine becomes legal, the Australian government must strictly regulate it.

An Investigation of Tertiary Students' Understanding of Evaporation, Condensation and Vapour Pressure

ERIC Educational Resources Information Center

Gopal, Hemant; Kleinsmidt, Jacques; Case, Jennifer; Musonge, Paul

2004-01-01

Based on a purposive sample of 15 second-year chemical engineering students, this study investigates students' conceptions of evaporation, condensation and vapour pressure. During individual interviews the students were questioned on three tasks that had been designed around these topics. Qualitative analysis of student responses showed a range of…

A novel hybrid tobacco product that delivers a tobacco flavour note with vapour aerosol (Part 1): Product operation and preliminary aerosol chemistry assessment.

PubMed

Poynton, Simon; Sutton, Joseph; Goodall, Sharon; Margham, Jennifer; Forster, Mark; Scott, Ken; Liu, Chuan; McAdam, Kevin; Murphy, James; Proctor, Christopher

2017-08-01

Vapour products have demonstrated potential to be a lower-risk alternative to cigarettes. The present study describes a novel hybrid tobacco product that combines a warm aerosol stream generated by an electronic vaporisation mechanism with tobacco top flavour from cut tobacco. During operation, the aerosol stream released from the vapour cartomiser is passed through a bed of blended cut tobacco by the puffing flow, elevating the tobacco temperature and eluting volatile tobacco flavour components. A preliminary but comprehensive analysis of the aerosol composition of the hybrid tobacco product found that emissions were dominated by the control vapour formulation. In non-targeted chemical screening, no detectable difference in GC scans was observed between the hybrid tobacco product and the control vapour product. However, a sensorially elevated tobacco flavour was confirmed by a consumer sensory panel (P < 0.05). In a targeted analysis of 113 compounds, either identified by regulatory bodies as potential toxicants in cigarette smoke or formed from electronic vapour products, only 26 were quantified. The novel action of tobacco heating and liquid aerosolisation produced classes and levels of toxicants that were similar to those of the control vapour product, but much lower than those of a Kentucky 3R4F reference cigarette. For nine toxicants mandated by the WHO Study Group on Tobacco Product Regulation for reduction in cigarette emissions, the levels were 91%-99% lower per puff in the hybrid tobacco product aerosol than in 3R4F smoke. Overall, the novel hybrid tobacco product provides a sensorially enhanced tobacco flavour, but maintains a toxicant profile similar to its parent vapour product with relatively low levels of known cigarette smoke toxicants. Copyright © 2017 British American Tobacco. Published by Elsevier Ltd.. All rights reserved.

A vapour phase assay for evaluating the antimicrobial activities of essential oils against bovine respiratory bacterial pathogens.

PubMed

Amat, S; Baines, D; Alexander, T W

2017-12-01

The objectives of this study were to develop a new assay for the evaluation of the antimicrobial activities of essential oils (EOs) in vapour phase and to demonstrate the antimicrobial activities of commercial EOs against BRPs. To achieve the first objective, a microtube cap containing 100 μl of EO was embedded in an agar plate. An agar plug (diameter 13 mm) inoculated with a bacterial suspension containing10 8  CFU per ml was then placed over the cap and incubated at 37°C for 24 h. Subsequently, bacteria were recovered from the agar plug by immersion in 5 ml of broth for 10 min, followed by vortexing for 30 s, and the broths were then plated for enumeration. To demonstrate the usefulness of the assay, nine commercial EOs derived from the following specific plants: ajowan, carrot seed, cinnamon leaf, citronella, fennel, ginger grass, lavender, rosemary and thyme were first evaluated for their vapour phase antimicrobial activities against Mannheimia haemolytica serotype 1. Selected EOs were further tested against Pasteurella multocida and Histophilus somni. The EOs of ajowan, thyme and cinnamon leaf completely or partially inhibited BRPs growth. This new assay provided reproducible results on the vapour phase antimicrobial activities of EOs against BRPs. These results support further study of EOs as a potential mitigation strategy against BRPs. In this study, we present a new vapour phase assay for evaluating the antimicrobial activities of essential oils (EO) against bovine respiratory pathogens (BRPs). Using this assay, we identified EOs, such as ajowan, thyme and cinnamon leaf, that can effectively inhibit growth of the BRPs Mannheimia haemolytica serotype 1, Pasteurella multocida and Histophilus somni. This is the first study to demonstrate the vapour phase antimicrobial activity of EOs against BRPs. © 2017 Her Majesty the Queen in Right of Canada. © 2017 The Society for Applied Microbiology Reproduced with the permission of the Minister of the

Bipolar Cascade Vertical-Cavity Surface-Emitting Lasers for RF Photonic Link Applications

DTIC Science & Technology

2007-09-01

6 IV Current versus Voltage . . . . . . . . . . . . . . . . . . . . . 7 MBE Molecular Beam Epitaxy ...of carrying maximum photocur- rent. Numerous material parameters have been studied. Growth parameters for molecular beam epitaxy (MBE), metal-organic...12 MOCVD Metal-Organic Chemical Vapor Deposition . . . . . . . . . . 12 CBE Chemical Beam Epitaxy . . . . . . . . . . . . . . . . . . . . 12 LPE

Lidar observations of low-level wind reversals over the Gulf of Lion and characterization of their impact on the water vapour variability

NASA Astrophysics Data System (ADS)

Di Girolamo, Paolo; Flamant, Cyrille; Cacciani, Marco; Summa, Donato; Stelitano, Dario; Richard, Evelyne; Ducrocq, Véronique; Fourrie, Nadia; Said, Frédérique

2017-02-01

Water vapour measurements from a ground-based Raman lidar and an airborne differential absorption lidar, complemented by high resolution numerical simulations from two mesoscale models (Arome-WMED and MESO-NH), are considered to investigate transition events from Mistral/Tramontane to southerly marine flow taking place over the Gulf of Lion in Southern France in the time frame September-October 2012, during the Hydrological Cycle in the Mediterranean Experiment (HyMeX) Special Observation Period 1 (SOP1). Low-level wind reversals associated with these transitions are found to have a strong impact on water vapour transport, leading to a large variability of the water vapour vertical and horizontal distribution. The high spatial and temporal resolution of the lidar data allow to monitor the time evolution of the three-dimensional water vapour field during these transitions from predominantly northerly Mistral/Tramontane flow to a predominantly southerly flow, allowing to identify the quite sharp separation between these flows, which is also quite well captured by the mesoscale models.

Growth, structure and stability of sputter-deposited MoS2 thin films.

PubMed

Kaindl, Reinhard; Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS 2 ) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS 2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS 2 films by magnetron sputtering. MoS 2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO 2 /Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS 2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS 2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS 2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS 2 thin films are discussed. A potential application for such conductive nanostructured MoS 2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS 2 films.

Growth, structure and stability of sputter-deposited MoS2 thin films

PubMed Central

Bayer, Bernhard C; Resel, Roland; Müller, Thomas; Skakalova, Viera; Habler, Gerlinde; Abart, Rainer; Cherevan, Alexey S; Eder, Dominik; Blatter, Maxime; Fischer, Fabian; Meyer, Jannik C; Polyushkin, Dmitry K; Waldhauser, Wolfgang

2017-01-01

Molybdenum disulphide (MoS2) thin films have received increasing interest as device-active layers in low-dimensional electronics and also as novel catalysts in electrochemical processes such as the hydrogen evolution reaction (HER) in electrochemical water splitting. For both types of applications, industrially scalable fabrication methods with good control over the MoS2 film properties are crucial. Here, we investigate scalable physical vapour deposition (PVD) of MoS2 films by magnetron sputtering. MoS2 films with thicknesses from ≈10 to ≈1000 nm were deposited on SiO2/Si and reticulated vitreous carbon (RVC) substrates. Samples deposited at room temperature (RT) and at 400 °C were compared. The deposited MoS2 was characterized by macro- and microscopic X-ray, electron beam and light scattering, scanning and spectroscopic methods as well as electrical device characterization. We find that room-temperature-deposited MoS2 films are amorphous, of smooth surface morphology and easily degraded upon moderate laser-induced annealing in ambient conditions. In contrast, films deposited at 400 °C are nano-crystalline, show a nano-grained surface morphology and are comparatively stable against laser-induced degradation. Interestingly, results from electrical transport measurements indicate an unexpected metallic-like conduction character of the studied PVD MoS2 films, independent of deposition temperature. Possible reasons for these unusual electrical properties of our PVD MoS2 thin films are discussed. A potential application for such conductive nanostructured MoS2 films could be as catalytically active electrodes in (photo-)electrocatalysis and initial electrochemical measurements suggest directions for future work on our PVD MoS2 films. PMID:28685112

The water vapour radiometer of Paranal: homogeneity of precipitable water vapour from two years of operations

NASA Astrophysics Data System (ADS)

Kerber, Florian; Querel, Richard R.; Neureiter, Bianca

2015-04-01

A Low Humidity and Temperature Profiling (LHATPRO) microwave radiometer, manufactured by Radiometer Physics GmbH (RPG), is used to monitor sky conditions over ESO's Paranal observatory in support of VLT science operations. The unit measures several channels across the strong water vapour emission line at 183 GHz, necessary for resolving the low levels of precipitable water vapour (PWV) that are prevalent on Paranal (median ∼2.4 mm). The instrument consists of a humidity profiler (183-191 GHz), a temperature profiler (51-58 GHz), and an infrared camera (∼10 μm) for cloud detection. We present a statistical analysis of the homogeneity of all-sky PWV using 24 months of PWV observations. The question we tried to address was whether PWV is homogeneous enough across the sky such that service mode observations with the VLT can routinely be conducted with a user-provided constraint for PWV measured at zenith. We find the PWV over Paranal to be remarkably homogeneous across the sky down to 27.5° elevation with a median variation of 0.07 mm (rms). The homogeneity is a function of the absolute PWV but the relative variation is fairly constant at 2 to 3% (rms). Such variations will not be a significant issue for analysis of astronomical data. Users at ESO can specify PWV - measured at zenith - as an ambient constraint in service mode to enable, for instance, very demanding observations in the infrared. We conclude that in general it will not be necessary to add another observing constraint for PWV homogeneity to ensure integrity of observations. For demanding observations requiring very low PWV, where the relative variation is higher, the optimum support could be provided by observing with the LHATPRO in the same line-of-sight simultaneously. Such a mode of operations has already been tested but will have to be justified in terms of scientific gain before implementation can be considered. We plan to extend our analysis of PWV variations covering a larger parameters space

Investigation of the vapour-plasma plume in the welding of titanium by high-power ytterbium fibre laser radiation

DOE Office of Scientific and Technical Information (OSTI.GOV)

Bykovskiy, D P; Petrovskii, V N; Uspenskiy, S A

2015-03-31

The vapour-plasma plume produced in the welding of 6-mm thick VT-23 titanium alloy plates by ytterbium fibre laser radiation of up to 10 kW power is studied in the protective Ar gas medium. High-speed video filming of the vapour-plasma plume is used to visualise the processes occurring during laser welding. The coefficient of inverse bremsstrahlung by the welding plasma plume is calculated from the data of the spectrometric study. (interaction of laser radiation with matter)

Formation of nanocrystalline diamond in polymer like carbon films deposited by plasma CVD.

PubMed

Bhaduri, A; Chaudhuri, P

2009-09-01

Conventional plasma enhanced chemical vapour deposition (PECVD) method is generally not suitable for the growth of nanocrystalline diamond (NCD) films. However, our study shows that conditions favourable for powder formation help to grow large amount of nanocrystallites in conventional PECVD. With CH4 as the carbon source gas, dilution with Ar and moderate (50 W) rf power enhances formations of powders (nanoparticles) and C2 dimers within the plasma. On the other hand, with pure CH4 or with hydrogen diluted CH4, powder formation as also NCD growth is hindered. It is proposed that the nanoparticles formed in the plasma act as the "islands" while the C2 dimers are the "seeds" for the NCD growth. The structure of the films deposited on the grounded anode under different conditions of dilution has been studied. It is observed that with high Ar dilution the films contain NCD embedded in polymer like carbon (PLC) matrix.

Development of a wavelength stabilized seed laser system for an airborne water vapour lidar experiment

NASA Astrophysics Data System (ADS)

Schwarzer, H.; Börner, A.; Fix, A.; Günther, B.; Hübers, H.-W.; Raugust, M.; Schrandt, F.; Wirth, M.

2007-09-01

At the German Aerospace Center an airborne multi-wavelength differential absorption LIDAR for the measurement of atmospheric water vapour is currently under development. This instrument will enable the retrieval of the complete humidity profile from the surface up to the lowermost stratosphere with high vertical and horizontal resolution at a systematic error below 5%. The LIDAR will work in the wavelength region around 935 nm at three different water vapour absorption lines and one reference wavelength. A major sub-system of this instrument is a highly frequency stabilized seed laser system for the optical parametrical oscillators which generate the narrowband high energy light pulses. The development of the seed laser system includes the control software, the electronic control unit and the opto-mechanical layout. The seed lasers are Peltier-cooled distributed feedback laser diodes with bandwidths of about 30 MHz, each one operating for 200 μs before switching to the next one. The required frequency stability is +/- 30 MHz ≅ +/- 10 -4 nm under the rough environmental conditions aboard an aircraft. It is achieved by locking the laser wavelength to a water vapour absorption line. The paper describes the opto-mechanical layout of the seed laser system, the stabilization procedure and the results obtained with this equipment.

Comparison of characteristics of fluorine doped zinc and gallium tin oxide composite thin films deposited on stainless steel 316 bipolar plate by electron cyclotron resonance-metal organic chemical vapor deposition for proton exchange membrane fuel cells.

PubMed

Park, Jihun; Hudaya, Chairul; Lee, Joong Kee

2011-09-01

In order to replace the brittle graphite bipolar plates currently used for the PEMFC stack, coated SUS 316 was employed. As a metallic bipolar plate, coated SUS 316 can provide higher mechanical strength, better durability to shocks and vibration, less permeability, improved thermal and bulk electrical conductivity, as well as being thinner and lighter. To enhance the interfacial contact resistance and corrosion resistance of SUS 316, the deposition of GTO:F and ZTO:F composite films was carried out by ECR-MOCVD. The surface morphology of the films consisted of tiny elliptically shaped grains with a thickness of 1 microm. The corrosion current for GTO:F was 0.13 Acm(-2) which was much lower than that of bare SUS 316 (50.16 Acm(-2)). The GTO:F coated film had the smallest corrosion current due to the formation of a tight surface morphology with very few pin-holes. The GTO:F coated film exhibited the highest cell voltage and power density due to its lower ICR values.

Nicotine content of electronic cigarettes, its release in vapour and its consistency across batches: regulatory implications.

PubMed

Goniewicz, Maciej L; Hajek, Peter; McRobbie, Hayden

2014-03-01

Electronic cigarettes (EC) may have a potential for public health benefit as a safer alternative to smoking, but questions have been raised about whether EC should be licensed as a medicine, with accurate labelling of nicotine content. This study determined the nicotine content of the cartridges of the most popular EC brands in the United Kingdom and the nicotine levels they deliver in the vapour, and estimated the safety and consistency of nicotine delivery across batches of the same product as a proxy for quality control for individual brands and within the industry. We studied five UK brands (six products) with high internet popularity. Two samples of each brand were purchased 4 weeks apart, and analysed for nicotine content in the cartridges and nicotine delivery in vapour. The nicotine content of cartridges within the same batch varied by up to 12% relative standard deviation (RSD) and the mean difference between different batches of the same brand ranged from 1% [95% confidence interval (CI) = -5 to 7%] to 20% (95% CI=14-25%) for five brands and 31% (95% CI=21-39%) for the sixth. The puffing schedule used in this study vaporized 10-81% of the nicotine present in the cartridges. The nicotine delivery from 300 puffs ranged from ∼2 mg to ∼15 mg and was not related significantly to the variation of nicotine content in e-liquid (r=0.06, P=0.92). None of the tested products allowed access to e-liquid or produced vapour nicotine concentrations as high as conventional cigarettes. There is very little risk of nicotine toxicity from major electronic cigarette (EC) brands in the United Kingdom. Variation in nicotine concentration in the vapour from a given brand is low. Nicotine concentration in e-liquid is not well related to nicotine in vapour. Other EC brands may be of lower quality and consumer protection regulation needs to be implemented, but in terms of accuracy of labelling of nicotine content and risks of nicotine overdose, regulation over and above

Ethanol, vinegar and Origanum vulgare oil vapour suppress the development of anthracnose rot in tomato fruit.

PubMed

Tzortzakis, Nikos G

2010-08-15

Anthracnose rot (Colletotrichum coccodes) development in vitro or in tomato (Lycopersicon esculentum L.) fruit was evaluated after treatment with absolute ethyl alcohol (AEA), vinegar (VIN), chlorine (CHL) or origanum oil (ORI) and storage at 12 degrees C and 95% relative humidity during or following exposure to the volatiles. Fruit treated with vapours reduced fungal spore germination/production, but in the case of AEA- and VIN-treated fruits, fungal mycelium development was accelerated. Fruit lesion development was suppressed after fruit exposure to pure (100% v/v) AEA or ORI vapours which were accompanied by increased fruit cracking. Exposure to pure VIN-, CHL- and ORI vapours reduced (up to 92%) spore germination in vitro, but no differences were observed in the AEA treatment. The benefits associated with volatiles-enrichment were maintained in fruit pre-exposed to vapours, resulting in suppression in spore germination and spore production. However, studies performed on fungi grown on Potato Dextrose Agar revealed fewer direct effects of volatiles on fungal colony development and spore germination per se, implying that suppression of pathogen development was due in a large part to the impact of volatiles on fruit-pathogen interactions and/or 'memory' effects on fruit tissue. Work is currently focussing on the mechanisms underlying the impacts of volatiles on fruit quality related attributes. The results of this study indicate that volatiles may be considered as an alternative to the traditional postharvest sanitizing techniques. Each commodity needs to be individually assessed, and the volatile concentration and sanitising technique optimised, before the volatile treatment is used commercially. Copyright 2010 Elsevier B.V. All rights reserved.

Clearing the air: protocol for a systematic meta-narrative review on the harms and benefits of e-cigarettes and vapour devices.

PubMed

MacDonald, Marjorie; O'Leary, Renee; Stockwell, Tim; Reist, Dan

2016-05-21

Under the shadow of the tobacco epidemic, the sale and use of e-cigarettes and other vapour devices is increasing dramatically. A contentious debate has risen within public health over the harms and benefits of these devices. Clearing the Air seeks to clarify the issues with a systematic review that informs the pressing regulatory and public health decisions to be made regarding these new products. Using an integrated knowledge translation approach, public health researchers and knowledge users will work collaboratively throughout the project. Our research questions are the following: (1) What are the health risks and benefits of vapour devices, and how do these compare to cigarettes? (2) What is the harm reduction potential of vapour devices for individuals, the environment, and society? (3) Does youth vapour device experimentation lead to cigarette use? (4) Can vapour devices be effective aids for tobacco cessation? and (5) What is the potential toxicity of second-hand vapour? We are using meta-narrative review to synthesize studies from diverse research traditions because of its capacity to address contestations around a topic. The project has six phases. In the planning phase, we finalized the research questions. In the search phase, we are locating academic publications and grey literature aided by a research librarian. The mapping phase involves categorizing these papers into research traditions to understand different perspectives on the evidence for each research question. In the appraisal phase, we will select and evaluate the relevant papers. Finally, in the synthesis phase, using analytic techniques unique to meta-narrative methodology, we will compare and contrast the evidence from different research traditions to answer our research questions, identifying overarching meta-narratives. In the final stage, the full team will draft recommendations to be disseminated through a variety of knowledge translation strategies. Meta-narrative synthesis has the

Female reproductive health in two lamp factories: effects of exposure to inorganic mercury vapour and stress factors.

PubMed

De Rosis, F; Anastasio, S P; Selvaggi, L; Beltrame, A; Moriani, G

1985-07-01

To evaluate the possible influence of mercury vapour on female reproduction, 153 women working in a mercury vapour lamp factory have been compared with 193 women employed in another factory of the same company, where mercury was not used. Both groups of subjects were exposed to stress factors (noise, rhythms of production, and shift work). The production process has been analysed by inspection of the plants and by collective discussions with "homogeneous groups" of workers; a retrospective inquiry into work history and reproductive health events has been subsequently performed by an individual interview. Women exposed to mercury vapour currently not exceeding the time weighted average air concentration of 0.01 mg/m3 declared higher prevalence and incidence rates of menstrual disorders, primary subfecundity, and adverse pregnancy outcome; however, the progression of these problems with the level of exposure to mercury inside the same factory was not always clear. The results of this study neither prove nor exclude the possibility that occupational exposure to this concentration of mercury has a negative effect on female reproduction.

Clausius-Clapeyron Equation and Saturation Vapour Pressure: Simple Theory Reconciled with Practice